{"meta":{"query_hash":"eaa7cddf67d7","filters":{"topic":"3D IC and TSV technologies"},"cohort_total":238,"direct_labels_cover":0,"predictions_cover":238,"exported":238,"export_cap":100000,"truncated":false,"label_status":"direct model label, unvalidated","prediction_status":"machine_predicted_unvalidated (Codex and Gemma teacher distillation)","score_status":"score_only:v0-immature-baseline","snapshot":{"source":"OpenAlex, pinned release, all 482 partitions","release":"2026-06-24","frame_built":"2026-07-12"},"permalink":"https://metacan.xera.ac/q/eaa7cddf67d7","api":"https://metacan.xera.ac/api/v1/cohort?topic=3D+IC+and+TSV+technologies"},"results":[{"id":"W1532410448","doi":"","title":"Wafer post-processing for a reconfigurable wafer-scale circuit board","year":2009,"lang":"en","type":"article","venue":"Espace ÉTS (ETS)","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Université du Québec à Montréal; Université du Québec en Outaouais; McGill University","funders":"","keywords":"Wafer; CMOS; Wafer-scale integration; Interconnection; Reliability (semiconductor); Electronic engineering; Integrated circuit; Microfabrication; Computer science; Electronic circuit; Etching (microfabrication); Embedded system; Engineering; Electrical engineering; Materials science; Nanotechnology; Telecommunications","score_opus":0.012992998355686318,"score_gpt":0.22151646782983198,"score_spread":0.20852346947414566,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1532410448","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.7314671,0.005548225,0.057340253,0.01395032,0.0014256252,0.0015358814,0.00008069188,0.0088098105,0.17984205],"genre_scores_gemma":[0.9931003,0.00006909144,0.0023311279,0.00032034513,0.000115058385,0.00004271867,0.000011699439,0.000049507606,0.003960164],"study_design_codex":"design_other","study_design_gemma":"not_applicable","domain_scores_codex":[0.9988042,0.000006997117,0.00020111541,0.0002783379,0.0001339245,0.00057539693],"domain_scores_gemma":[0.9994085,0.000041826137,0.000038205708,0.00034855973,0.00007757481,0.00008534248],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000121879704,0.0002381508,0.00027687172,0.0001347187,0.00012766385,0.000090746136,0.0002687649,0.00022524886,0.00009997725],"category_scores_gemma":[0.00007457018,0.00023072003,0.00010173376,0.00021862892,0.000039086317,0.00025317655,0.0000140403845,0.00023128584,0.00014497002],"study_design_candidate":"design_other","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00010824652,0.00014739016,0.00055177946,0.0004907116,0.00012242707,0.00003069125,0.003055163,0.0044812686,0.11206818,0.0069335443,0.08008452,0.7919261],"study_design_scores_gemma":[0.003830397,0.0009885319,0.014529441,0.0006715904,0.00019391564,0.0000926175,0.0048944983,0.035388652,0.33222547,0.028476086,0.5756466,0.0030622089],"about_ca_topic_score_codex":0.000009725929,"about_ca_topic_score_gemma":0.000030710893,"teacher_disagreement_score":0.78886384,"about_ca_system_score_codex":0.00009445478,"about_ca_system_score_gemma":0.00003288377,"threshold_uncertainty_score":0.94084895},"labels":[],"label_agreement":null},{"id":"W1552266427","doi":"10.1109/iscas.2015.7169133","title":"DLL based test solution for interposers in 2.5-D ICs","year":2015,"lang":"en","type":"article","venue":"","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Windsor","funders":"","keywords":"Interposer; CMOS; Interconnection; Electronic engineering; Computer science; Propagation delay; Software; Embedded system; Materials science; Engineering; Operating system","score_opus":0.031049736842098146,"score_gpt":0.22568533137196273,"score_spread":0.1946355945298646,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1552266427","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.0802742,0.00013449049,0.8910229,0.00067778485,0.00035931615,0.00027935187,0.0000073285455,0.0017594065,0.025485221],"genre_scores_gemma":[0.9871504,0.000002126149,0.012649282,0.00003382951,0.000009951114,0.000021612947,0.0000037225159,0.000007913682,0.00012116209],"study_design_codex":"not_applicable","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9997507,0.000001137178,0.00006639921,0.000047939986,0.000029046052,0.00010479062],"domain_scores_gemma":[0.9998644,0.000036107027,0.000004364562,0.00006475608,0.0000130285125,0.000017336866],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00005954169,0.000045121258,0.000051251227,0.000057355723,0.0000050597087,0.000006073443,0.00005520081,0.00005416956,0.0000046226305],"category_scores_gemma":[0.00008497625,0.000040757444,0.000013723662,0.000068608286,0.000011726059,0.00004603229,0.00000968187,0.000043967753,0.000017140537],"study_design_candidate":"simulation_or_modeling","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000106488784,0.00042510405,0.12405414,0.0005351175,0.00007095256,0.000023216351,0.0008974375,0.07199214,0.030083468,0.019913327,0.45249093,0.2994077],"study_design_scores_gemma":[0.0005381866,0.00007199567,0.00074104726,0.000014302348,0.0000023287575,5.122735e-7,0.00019737789,0.97569543,0.013478269,0.0014702069,0.0076853763,0.000104979576],"about_ca_topic_score_codex":0.0000135645805,"about_ca_topic_score_gemma":0.000098961325,"teacher_disagreement_score":0.9068762,"about_ca_system_score_codex":0.00005755589,"about_ca_system_score_gemma":0.000009424222,"threshold_uncertainty_score":0.16620404},"labels":[],"label_agreement":null},{"id":"W1601853155","doi":"10.1109/aps.2005.1551373","title":"24 GHz differential integrated antennas in 10 Ω-cm bulk silicon","year":2005,"lang":"en","type":"article","venue":"","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":14,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Carleton University","funders":"","keywords":"Lossy compression; Differential (mechanical device); Wireless; Electrical impedance; Electronic engineering; Omega; Electrical engineering; Very-large-scale integration; Silicon; Materials science; Computer science; Optoelectronics; Physics; Telecommunications; Engineering","score_opus":0.009863099367313772,"score_gpt":0.2000491515592982,"score_spread":0.19018605219198442,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1601853155","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9786267,0.00018820597,0.0026212626,0.00025984226,0.00017489016,0.00007476046,0.0000026765704,0.0014846498,0.016566988],"genre_scores_gemma":[0.995523,0.0000700216,0.00069598516,0.000022269032,0.00004014491,0.000009163855,0.0000071413756,0.000016157725,0.0036161204],"study_design_codex":"design_other","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99945754,0.0000041557837,0.00015161591,0.00011245598,0.000059699356,0.00021454532],"domain_scores_gemma":[0.999777,0.000015011964,0.000007707075,0.00016551105,0.000010824196,0.000023919943],"candidate_categories":["insufficient_payload"],"consensus_categories":[],"category_scores_codex":[0.000023153818,0.00012148176,0.00013570869,0.00012242538,0.000012284306,0.00001885487,0.0001437663,0.00012309938,0.0013464077],"category_scores_gemma":[0.000022848762,0.00009664884,0.00003082091,0.00016592402,0.000029125866,0.00008249724,0.000034122793,0.00018765838,0.00031238046],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0000850883,0.00044516058,0.010497265,0.00014885156,0.00020637133,0.00007982494,0.00089124445,0.01367234,0.28224844,0.012083881,0.08287489,0.59676665],"study_design_scores_gemma":[0.0018924216,0.00012300999,0.015349138,0.00010792975,0.00001989861,0.000017582608,0.00091852766,0.5401693,0.343529,0.0010665647,0.095855564,0.0009510539],"about_ca_topic_score_codex":0.000041693827,"about_ca_topic_score_gemma":0.00025811596,"teacher_disagreement_score":0.5958156,"about_ca_system_score_codex":0.000048637612,"about_ca_system_score_gemma":0.0000047715316,"threshold_uncertainty_score":0.9995665},"labels":[],"label_agreement":null},{"id":"W1612842380","doi":"10.1109/mwscas.2015.7282065","title":"Contactless detection of faulty TSV in 3D IC via capacitive coupling","year":2015,"lang":"en","type":"article","venue":"","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":2,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Windsor","funders":"CMC Microsystems","keywords":"HFSS; Capacitive coupling; Three-dimensional integrated circuit; Through-silicon via; Capacitive sensing; Materials science; Electronic engineering; Coupling (piping); Integrated circuit; Optoelectronics; Silicon; Electrical engineering; Engineering; Voltage; Composite material","score_opus":0.019346768646562613,"score_gpt":0.21323444612951742,"score_spread":0.1938876774829548,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1612842380","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.8805302,0.00010329247,0.11383876,0.0000058449646,0.00011667806,0.00006045777,0.0000013965695,0.00030549624,0.00503789],"genre_scores_gemma":[0.99949074,0.000012137467,0.00043612573,0.000002888525,0.000008745203,0.0000070823344,8.7842255e-7,0.000007793536,0.000033626522],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9996706,0.0000021241124,0.0001104799,0.0000592737,0.00005825302,0.000099247765],"domain_scores_gemma":[0.99983966,0.000018139783,0.000013369745,0.00008093941,0.00002974187,0.000018121124],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00006672487,0.000059442642,0.00010505437,0.00007587654,0.0000063325424,0.0000033667782,0.000049590406,0.00007976751,0.000007489978],"category_scores_gemma":[0.000027981348,0.00005410565,0.000013205745,0.00011570848,0.000024378209,0.000068223206,0.000012473418,0.000098835466,0.00001282518],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000084918014,0.000126696,0.028720938,0.00027992533,0.00016676869,0.000038724447,0.004331741,0.14948213,0.65877336,0.0038728546,0.0003436073,0.1537783],"study_design_scores_gemma":[0.0005186834,0.000057329726,0.004540504,0.000028182716,0.0000055432856,0.000004273276,0.0026360601,0.25309488,0.737967,0.0008332896,0.00016685718,0.00014741595],"about_ca_topic_score_codex":0.00021970617,"about_ca_topic_score_gemma":0.00031598762,"teacher_disagreement_score":0.1536309,"about_ca_system_score_codex":0.000064757325,"about_ca_system_score_gemma":0.000005333005,"threshold_uncertainty_score":0.22063644},"labels":[],"label_agreement":null},{"id":"W179156617","doi":"","title":"SRAM in Three Dimensional Integrated Circuits","year":2009,"lang":"en","type":"article","venue":"Research Repository (Delft University of Technology)","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"","funders":"University of Toronto; Technische Universiteit Delft","keywords":"Static random-access memory; Electronic circuit; Integrated circuit; Electronic engineering; Computer science; Process (computing); Process variation; Sense amplifier; Electrical engineering; Engineering; Semiconductor memory","score_opus":0.021437864552066678,"score_gpt":0.23796684143701163,"score_spread":0.21652897688494496,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W179156617","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.98757666,0.0006183212,0.00050484866,0.00045754627,0.000053994732,0.00017877405,0.0000027265191,0.0009973514,0.009609794],"genre_scores_gemma":[0.99850637,0.000059264148,0.0010574418,0.0000018503034,0.000007250911,5.2926396e-7,0.000002072655,0.000008440746,0.0003567538],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99887705,0.000025911799,0.00015244205,0.00023781434,0.000296984,0.0004097932],"domain_scores_gemma":[0.99928063,0.000043583546,0.000026203397,0.00043369536,0.00016747997,0.000048381055],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00022872233,0.00012039899,0.00022172496,0.0013220989,0.00013537577,0.000008709207,0.0006559611,0.0004205075,0.000012441753],"category_scores_gemma":[0.000077928205,0.00013416132,0.000050783234,0.0014099126,0.00049057946,0.00013120224,0.0001311852,0.0009089512,0.0000212768],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00015971246,0.00085089635,0.04030276,0.00021133115,0.0002899518,0.0041862824,0.00033313927,0.012612027,0.5784357,0.059734493,0.011799489,0.2910842],"study_design_scores_gemma":[0.005476276,0.0027916369,0.25956148,0.0015574554,0.00007055321,0.00045215205,0.009195579,0.13015875,0.47456366,0.07792443,0.036156923,0.002091098],"about_ca_topic_score_codex":0.000112432586,"about_ca_topic_score_gemma":0.000046559166,"teacher_disagreement_score":0.2889931,"about_ca_system_score_codex":0.00024122177,"about_ca_system_score_gemma":0.000071995186,"threshold_uncertainty_score":0.54709405},"labels":[],"label_agreement":null},{"id":"W1796445194","doi":"10.1109/cicc.1994.379764","title":"An overview of technology, architecture and CAD tools for programmable logic devices","year":2002,"lang":"en","type":"article","venue":"","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":18,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Toronto","funders":"","keywords":"Programmable Array Logic; Programmable logic device; Simple programmable logic device; Programmable logic array; Computer science; Erasable programmable logic device; Field-programmable gate array; Logic synthesis; Logic family; Macrocell array; Computer architecture; Complex programmable logic device; Logic gate; Digital electronics; Embedded system; Register-transfer level; Electronic circuit; Computer hardware; Electrical engineering; Engineering; Algorithm","score_opus":0.06103781827731848,"score_gpt":0.27536129340612625,"score_spread":0.21432347512880778,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1796445194","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.8803706,0.07028955,0.030605538,0.0017338604,0.00010365996,0.0014047666,0.0000399184,0.0056257634,0.009826313],"genre_scores_gemma":[0.9566207,0.00086052355,0.042348802,0.000023618662,0.000007754382,0.000059681293,0.0000020956338,0.000011612242,0.000065247266],"study_design_codex":"design_other","study_design_gemma":"not_applicable","domain_scores_codex":[0.9995807,0.0000020378372,0.000107797765,0.00010754213,0.00003540065,0.00016656176],"domain_scores_gemma":[0.99973965,0.000025284522,0.000017077376,0.00018268515,0.00001716606,0.000018116847],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000035389185,0.00009265887,0.0001480708,0.00009511374,0.000023429744,0.00002101045,0.00013663988,0.00013961767,0.00003282791],"category_scores_gemma":[0.000026446207,0.0000702536,0.000022722152,0.00016696825,0.00007643764,0.00009977974,0.000023141489,0.00007976136,0.0000023449948],"study_design_candidate":"design_other","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0000016463036,0.000031218173,0.0011222953,0.00043027315,0.000032913224,0.0000012713831,0.000047558617,0.00033220436,0.0022183342,0.052061748,0.00037400844,0.9433465],"study_design_scores_gemma":[0.002418733,0.0025518988,0.0045537194,0.0004274445,0.00018478841,0.0001479868,0.0031726018,0.085695945,0.18540654,0.26855087,0.44509566,0.0017938181],"about_ca_topic_score_codex":0.0000041087055,"about_ca_topic_score_gemma":0.000030013764,"teacher_disagreement_score":0.9415527,"about_ca_system_score_codex":0.000005561296,"about_ca_system_score_gemma":0.0000013324037,"threshold_uncertainty_score":0.28648585},"labels":[],"label_agreement":null},{"id":"W1877621933","doi":"10.1109/arftg.2004.1387864","title":"A mechanically optimized stable and accurate on-wafer tuner setup","year":2004,"lang":"en","type":"article","venue":"","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Focus Microwaves (Canada)","funders":"","keywords":"Tuner; Wafer; Materials science; Computer science; Electronic engineering; Optoelectronics; Radio frequency; Engineering; Telecommunications","score_opus":0.01094200960462878,"score_gpt":0.20010449379052953,"score_spread":0.18916248418590076,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1877621933","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.54186666,0.00053329347,0.32821158,0.002315096,0.00040204564,0.0004854393,0.000017282326,0.0064004874,0.11976809],"genre_scores_gemma":[0.97598,0.0001692502,0.02292139,0.00013998292,0.000010972181,0.000014483161,0.0000016777567,0.00001836355,0.00074387033],"study_design_codex":"theoretical_or_conceptual","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9995436,0.0000026674927,0.00009673443,0.000113803755,0.00006363725,0.00017953504],"domain_scores_gemma":[0.9997631,0.000022527247,0.0000069910866,0.00016058097,0.0000102441645,0.000036568217],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00004601209,0.00010360245,0.00012127642,0.000041692503,0.000027793494,0.000028545073,0.0000820677,0.000086248525,0.00015361563],"category_scores_gemma":[0.000022816792,0.00007851366,0.000020444288,0.00007818066,0.0000192476,0.00008585247,0.000038777387,0.00011284999,0.000087740314],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00015206926,0.00019006278,0.000061414925,0.00016276888,0.0004350564,0.00013778164,0.0004424295,0.37761343,0.046526458,0.5295219,0.01940697,0.025349677],"study_design_scores_gemma":[0.014426234,0.0007929566,0.0008800509,0.00026185563,0.00011463619,0.00008901738,0.0014005235,0.08388173,0.6854936,0.17252797,0.037527382,0.0026040461],"about_ca_topic_score_codex":0.000013922652,"about_ca_topic_score_gemma":0.0000059603153,"teacher_disagreement_score":0.63896716,"about_ca_system_score_codex":0.000024446274,"about_ca_system_score_gemma":0.0000076069227,"threshold_uncertainty_score":0.32016942},"labels":[],"label_agreement":null},{"id":"W1964029416","doi":"10.1109/ets.2014.6847832","title":"Towards a general purpose mixed-signal instrumentation layer in the die stack of a 3D-SIC","year":2014,"lang":"en","type":"article","venue":"","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":2,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McGill University","funders":"","keywords":"Stack (abstract data type); Die (integrated circuit); Instrumentation (computer programming); CMOS; Debugging; SIGNAL (programming language); Electronic engineering; Process (computing); Suite; Computer science; Mixed-signal integrated circuit; Calibration; Layer (electronics); Embedded system; Chip; Integrated circuit; Engineering; Electrical engineering; Materials science; Mechanical engineering","score_opus":0.01545050120718478,"score_gpt":0.22546118236850127,"score_spread":0.2100106811613165,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1964029416","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.96924675,0.000060420112,0.013599327,0.000100423465,0.00006623552,0.00010196923,0.0000020908712,0.00014941231,0.016673356],"genre_scores_gemma":[0.9968203,0.000031997537,0.0029862649,0.00004821737,0.000022009517,0.000020849906,0.0000034563877,0.0000073862375,0.000059540456],"study_design_codex":"design_other","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9995638,0.0000173602,0.00013280811,0.00006536206,0.000101681675,0.00011894961],"domain_scores_gemma":[0.99981457,0.000018451177,0.000014475351,0.0001339135,0.000009566276,0.000008996882],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000119520526,0.00007112147,0.00009048031,0.00006173351,0.000011586075,0.000011957476,0.00014136836,0.000051349867,0.000051208193],"category_scores_gemma":[0.000011393512,0.00004707546,0.00002137278,0.0001060348,0.000028038216,0.00007229897,0.000023242996,0.0000832539,0.000012569921],"study_design_candidate":"design_other","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000016551832,0.0000901926,0.007998593,0.0001220871,0.00005575763,0.0000062867016,0.0018553421,0.0067030163,0.020696549,0.06761265,0.0034657044,0.8913773],"study_design_scores_gemma":[0.0036837156,0.0006831807,0.15620928,0.00010536055,0.00006742011,0.000021344269,0.005290919,0.2915882,0.48007706,0.032789662,0.028493006,0.0009908715],"about_ca_topic_score_codex":0.000078047655,"about_ca_topic_score_gemma":0.00011751394,"teacher_disagreement_score":0.8903864,"about_ca_system_score_codex":0.000018000508,"about_ca_system_score_gemma":0.0000059495333,"threshold_uncertainty_score":0.19196814},"labels":[],"label_agreement":null},{"id":"W1970433166","doi":"10.1109/vlsi-dat.2014.6834918","title":"Design-for-diagnosis: Your safety net in catching design errors in known good dies in CoWoS&lt;sup&gt;TM&lt;/sup&gt;/3D ICs","year":2014,"lang":"en","type":"article","venue":"","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"National Defence Medical Centre","funders":"","keywords":"Debugging; Chip; Computer science; Integrated circuit; Integrated circuit design; Integrator; Embedded system; Reliability engineering; Engineering; Programming language; Operating system; Telecommunications","score_opus":0.02897015721289946,"score_gpt":0.2360103026267761,"score_spread":0.20704014541387666,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1970433166","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.47008038,0.0026998846,0.51652664,0.0007881905,0.00040991115,0.00188291,0.00002226436,0.0020645147,0.0055252905],"genre_scores_gemma":[0.9447883,0.0010508656,0.053270232,0.00007982719,0.000060495047,0.00047882766,0.000013627336,0.00009617232,0.00016166133],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99729586,0.00016038369,0.00082629884,0.00051736593,0.00023869598,0.0009614036],"domain_scores_gemma":[0.99841094,0.00091102987,0.00007421809,0.00047591852,0.00003957673,0.00008829458],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.0012458153,0.00051365665,0.000710151,0.000665473,0.000085013664,0.000058706486,0.00055557315,0.00050699845,0.000043172884],"category_scores_gemma":[0.0004894952,0.0004939029,0.00008924002,0.00072489376,0.000094954376,0.0003580618,0.00015962923,0.0005930541,0.000050304167],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00009921425,0.00018708082,0.030680405,0.00022008375,0.00007177717,0.000043158987,0.0031394744,0.92233145,0.00085615605,0.00477095,0.002821081,0.034779146],"study_design_scores_gemma":[0.0034784605,0.00037673023,0.024256159,0.00065358356,0.00004670471,0.000013978804,0.0025994442,0.9417612,0.0091137085,0.00761507,0.008475092,0.0016098928],"about_ca_topic_score_codex":0.00031637936,"about_ca_topic_score_gemma":0.0026357342,"teacher_disagreement_score":0.47470793,"about_ca_system_score_codex":0.0003442023,"about_ca_system_score_gemma":0.000058478327,"threshold_uncertainty_score":0.99975127},"labels":[],"label_agreement":null},{"id":"W1974553761","doi":"10.1007/s10854-009-9987-z","title":"A hybrid inverse method for evaluating FC-PBGA material response to thermal cycles","year":2009,"lang":"en","type":"article","venue":"Journal of Materials Science Materials in Electronics","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":8,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Toronto Metropolitan University","funders":"","keywords":"Materials science; Ball grid array; Thermal expansion; Adhesive; Composite material; Material properties; Elasticity (physics); Thermal; Inverse; Structural engineering; Layer (electronics); Soldering; Thermodynamics; Mathematics; Engineering","score_opus":0.01987290779078158,"score_gpt":0.32161244926302074,"score_spread":0.30173954147223914,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1974553761","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99371386,0.00008189043,0.0029999109,0.00039648285,0.0021070745,0.0004655056,0.00010178099,0.00011486234,0.000018615801],"genre_scores_gemma":[0.9478418,0.000024912682,0.051684443,0.00014294451,0.00022755757,0.00003413903,0.000002680107,0.000032381944,0.000009137614],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9969084,0.00028695338,0.0010788096,0.00027068684,0.00056614116,0.0008889769],"domain_scores_gemma":[0.99893606,0.0001254225,0.00034565962,0.00029608965,0.00019321706,0.00010357623],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.011155781,0.0002727196,0.00064884924,0.00068501744,0.00018120928,0.00034620633,0.0010037252,0.00008871889,0.00006135021],"category_scores_gemma":[0.00077054533,0.0002416828,0.00006356177,0.00037602594,0.000094518124,0.0004447707,0.00012252388,0.00015328905,0.000008960932],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0023190177,0.000033037308,0.0000014507577,0.000025636768,0.0000097286265,0.000015997024,0.00019914983,0.018108796,0.975603,0.00024077517,0.00017640596,0.0032670388],"study_design_scores_gemma":[0.0007287944,0.0021998226,0.00024551072,0.00007746356,0.00002106882,0.00018476811,0.00015890888,0.0008731089,0.9902797,0.0046990314,0.00026218902,0.0002696369],"about_ca_topic_score_codex":0.00000478808,"about_ca_topic_score_gemma":0.000001632309,"teacher_disagreement_score":0.048684534,"about_ca_system_score_codex":0.0005911031,"about_ca_system_score_gemma":0.0004140556,"threshold_uncertainty_score":0.9855539},"labels":[],"label_agreement":null},{"id":"W1977400442","doi":"10.1116/1.3549114","title":"Surface activated bonding of copper through silicon vias and gold stud bumps at room temperature","year":2011,"lang":"en","type":"article","venue":"Journal of Vacuum Science & Technology A Vacuum Surfaces and Films","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":10,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McMaster University","funders":"","keywords":"Materials science; Interconnection; Composite material; Electroplating; Copper; Deformation (meteorology); Silicon; Contact resistance; Surface roughness; Optoelectronics; Metallurgy; Layer (electronics)","score_opus":0.017522659924962512,"score_gpt":0.23146844693145083,"score_spread":0.2139457870064883,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1977400442","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99269354,0.005672675,0.00003421649,0.00046751575,0.00029792247,0.00014966314,0.000012046992,0.0002449328,0.00042746414],"genre_scores_gemma":[0.99207884,0.0027203225,0.004974915,0.000018108483,0.0000092661085,0.0000019719707,3.6158173e-7,0.000024047593,0.00017214206],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9982386,0.000016825128,0.0005688438,0.0003279471,0.00032990653,0.0005178709],"domain_scores_gemma":[0.9989779,0.00006362586,0.0003160248,0.0003406431,0.0002021787,0.00009962229],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00045663078,0.00031062105,0.0006337399,0.00053472817,0.00023566838,0.000045481553,0.000680976,0.00047260724,0.000029597022],"category_scores_gemma":[0.00007719103,0.0002169258,0.00007039524,0.0014924988,0.0011991654,0.00082258246,0.00037199963,0.0007178411,0.000002506421],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00003852325,0.000050462335,0.033204015,0.000047058424,0.00007808977,0.000029129276,0.0009493066,0.00012181878,0.96288717,0.001332426,0.0008585366,0.00040344716],"study_design_scores_gemma":[0.0006553872,0.00057156844,0.011498417,0.00016599441,0.000056631467,0.00043582942,0.0043355525,0.000489805,0.9787052,0.0019049626,0.00085223105,0.00032838207],"about_ca_topic_score_codex":0.000015452393,"about_ca_topic_score_gemma":0.0000072602224,"teacher_disagreement_score":0.0217056,"about_ca_system_score_codex":0.000072192975,"about_ca_system_score_gemma":0.000055881424,"threshold_uncertainty_score":0.8845977},"labels":[],"label_agreement":null},{"id":"W1978037786","doi":"10.1145/1391469.1391632","title":"Keeping hot chips cool","year":2008,"lang":"en","type":"article","venue":"","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Apache (Canada)","funders":"","keywords":"Worry; Computer science; Risk analysis (engineering); Power (physics); Computer security; Business; Psychology","score_opus":0.019323417958138342,"score_gpt":0.18278396837286348,"score_spread":0.16346055041472513,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1978037786","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.76740843,0.00036485886,0.021168457,0.000053110612,0.00015983652,0.00005092327,6.859653e-7,0.0036229996,0.20717071],"genre_scores_gemma":[0.99713427,0.00014179604,0.001990119,0.000041775078,0.000021452517,0.0000036901304,6.3324006e-7,0.00000860763,0.0006576726],"study_design_codex":"not_applicable","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99975455,0.0000010218143,0.00005279557,0.000046592337,0.00003674541,0.00010828818],"domain_scores_gemma":[0.9998653,0.000008749319,0.0000029857165,0.00010453555,0.000004329503,0.000014094463],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000012285594,0.000047469675,0.00005475897,0.000030213025,0.00003253254,0.0000031844957,0.00006850864,0.000041577594,0.00010906507],"category_scores_gemma":[0.000009638514,0.00004206063,0.000016413906,0.00006699736,0.000023833,0.000040070307,0.00001470022,0.00006897866,0.00020859332],"study_design_candidate":"not_applicable","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000035011308,0.00014807157,0.040036034,0.0003243785,0.00046094906,0.00058149366,0.0027570676,0.028851211,0.04608256,0.115619585,0.5389583,0.2261453],"study_design_scores_gemma":[0.0016115526,0.00015335051,0.14701721,0.00008560714,0.000027416592,0.0005453768,0.0013452565,0.10161004,0.47221556,0.0044948715,0.26892313,0.0019706197],"about_ca_topic_score_codex":0.0000048830884,"about_ca_topic_score_gemma":0.000002393852,"teacher_disagreement_score":0.426133,"about_ca_system_score_codex":0.0000090903095,"about_ca_system_score_gemma":0.0000023244243,"threshold_uncertainty_score":0.26811147},"labels":[],"label_agreement":null},{"id":"W1980699453","doi":"10.1109/isscc.2006.1696063","title":"A 2.6GHz Dual-Core 64bx86 Microprocessor with DDR2 Memory Support","year":2006,"lang":"en","type":"article","venue":"","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":19,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Advanced Micro Devices (Canada)","funders":"","keywords":"Memory controller; Microprocessor; Embedded system; Chip; Computer science; Interconnection; Controller (irrigation); Dual (grammatical number); Computer hardware; Operating system; Semiconductor memory; Telecommunications","score_opus":0.005849187665998048,"score_gpt":0.1723883053757252,"score_spread":0.16653911770972715,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1980699453","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.7611015,0.000441372,0.0033207333,0.00019398943,0.000105664,0.00016098618,0.000007720466,0.0036120228,0.23105603],"genre_scores_gemma":[0.98592514,0.000021605123,0.0045018904,0.000049480066,0.000051486928,0.00002138226,0.000011793975,0.000034996916,0.009382223],"study_design_codex":"not_applicable","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.999349,0.0000012420724,0.00013161093,0.00014725394,0.000105733554,0.00026516648],"domain_scores_gemma":[0.9997034,0.000009956224,0.000014928542,0.00022083838,0.000025550034,0.000025307341],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000032689353,0.00015172799,0.00014127653,0.000073653035,0.000034498324,0.000021793692,0.00011065498,0.000097396056,0.00031350917],"category_scores_gemma":[0.0000038393277,0.00011169718,0.000027904347,0.0001725284,0.00006143824,0.00008869543,0.000026206058,0.0001243663,0.00019613848],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00008621434,0.0003690958,0.027956769,0.001219097,0.00041407146,0.0012960455,0.0006791834,0.01706921,0.120223016,0.033991,0.7555945,0.041101806],"study_design_scores_gemma":[0.0026438853,0.00046631537,0.015456813,0.000115966315,0.00010976931,0.00075851596,0.002059137,0.004635965,0.8516369,0.008899403,0.111125045,0.0020923186],"about_ca_topic_score_codex":0.000062557585,"about_ca_topic_score_gemma":0.00010556505,"teacher_disagreement_score":0.73141384,"about_ca_system_score_codex":0.000024944424,"about_ca_system_score_gemma":0.000015821443,"threshold_uncertainty_score":0.4554879},"labels":[],"label_agreement":null},{"id":"W1981141412","doi":"10.1145/2633606","title":"Statistical Peak Temperature Prediction and Thermal Yield Improvement for 3D Chip Multiprocessors","year":2014,"lang":"en","type":"article","venue":"ACM Transactions on Design Automation of Electronic Systems","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":20,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Division of Computer and Network Systems; Intel Corporation","keywords":"Computer science; Chip; Thermal; Fabrication; Yield (engineering); Leakage power; Process (computing); Three-dimensional integrated circuit; Integrated circuit; Matching (statistics); Electronic circuit; Power (physics); Materials science; Optoelectronics; Electrical engineering; Power consumption; Composite material; Telecommunications","score_opus":0.010922103713004346,"score_gpt":0.2083514887250244,"score_spread":0.19742938501202006,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1981141412","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.03611911,0.0002655776,0.9620078,0.000064205866,0.00017580608,0.00067895406,0.000038504077,0.0005805708,0.000069439644],"genre_scores_gemma":[0.9888799,0.00006740604,0.010589761,0.000010501123,0.00003158692,0.00033625486,0.000011435905,0.000024249863,0.000048861115],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.999134,0.000031925247,0.00028753627,0.0001656632,0.00014346749,0.00023739068],"domain_scores_gemma":[0.9992052,0.00041598093,0.00005340572,0.00023102597,0.000064225016,0.000030183015],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0002887296,0.00014611747,0.00018210254,0.0001204171,0.00009151443,0.000028056194,0.00011574295,0.00016088174,0.000008772087],"category_scores_gemma":[0.00011023119,0.0001328478,0.000030787316,0.000105701874,0.000033460306,0.00013014981,0.0000015508841,0.00016452101,0.0000028003046],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00016769057,0.0001742347,0.000019911437,0.001093133,0.00044654083,3.4152595e-7,0.0006017569,0.58007807,0.17241102,0.0083605265,0.0006118538,0.23603493],"study_design_scores_gemma":[0.0007507049,0.0011967474,0.0002997694,0.000108596076,0.000076477714,0.000009318198,0.00024878272,0.9471827,0.048888683,0.0005192403,0.0005350017,0.0001839864],"about_ca_topic_score_codex":0.000008600015,"about_ca_topic_score_gemma":0.0000022043039,"teacher_disagreement_score":0.9527608,"about_ca_system_score_codex":0.00008759316,"about_ca_system_score_gemma":0.000024576073,"threshold_uncertainty_score":0.5417376},"labels":[],"label_agreement":null},{"id":"W1981234825","doi":"10.1109/polytr.2007.4339181","title":"Surface Activated Bonding Method for Flexible Lamination","year":2007,"lang":"en","type":"article","venue":"","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":3,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McMaster University","funders":"","keywords":"Materials science; Adhesion; Dangling bond; Lamination; Composite material; Chemical engineering; Layer (electronics); Optoelectronics; Silicon","score_opus":0.02274315753572167,"score_gpt":0.30149693074931644,"score_spread":0.2787537732135948,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1981234825","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"methods","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.08253519,0.000036702964,0.88814855,0.000068951005,0.000098993856,0.00010054849,0.0000010650128,0.0019882754,0.027021717],"genre_scores_gemma":[0.7412152,0.000003658874,0.25514945,0.000008973435,0.000012307561,0.0000029296516,0.0000034600032,0.000012130421,0.0035918755],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.999655,0.000001744165,0.00007935457,0.000065903405,0.00004125035,0.0001567538],"domain_scores_gemma":[0.99977,0.00011362992,0.000008766731,0.00007600727,0.000018149254,0.000013437282],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00023186955,0.000057408073,0.00006367648,0.00005566924,0.000028379854,0.000009647667,0.000055852826,0.00007549143,0.00002019518],"category_scores_gemma":[0.000034793626,0.00005240655,0.000020262096,0.0001501643,0.000005979707,0.00008301791,0.000009855235,0.00005047772,0.000008466043],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0000096659915,0.000011912501,0.00026802078,0.000058180904,0.000037311747,0.0000011229141,0.00009821478,0.0075025787,0.75022006,0.10457309,0.008113037,0.1291068],"study_design_scores_gemma":[0.00012050337,0.00001238336,0.00028055333,0.000004198214,0.0000034674206,9.88514e-7,0.00023552893,0.021320935,0.9613028,0.0019406561,0.0147001995,0.00007775667],"about_ca_topic_score_codex":0.000007136457,"about_ca_topic_score_gemma":0.0000059339072,"teacher_disagreement_score":0.65868,"about_ca_system_score_codex":0.000039443043,"about_ca_system_score_gemma":0.0000018100417,"threshold_uncertainty_score":0.21370772},"labels":[],"label_agreement":null},{"id":"W1985544845","doi":"10.1109/impact.2008.4783857","title":"DuPont Fluorochemical materials in TSV process","year":2008,"lang":"en","type":"article","venue":"","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":true,"ca_institutions":"","funders":"","keywords":"Solvent; Computer science; Chemistry; Organic chemistry","score_opus":0.008969128549462675,"score_gpt":0.19316008035319793,"score_spread":0.18419095180373526,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1985544845","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.98693144,0.000076600976,0.00026087867,0.000038538492,0.000056936322,0.000047559995,8.904918e-7,0.0007862951,0.011800829],"genre_scores_gemma":[0.9991193,0.00005462527,0.0006203647,0.00001254767,0.000015883887,0.000018208975,0.0000017315402,0.000008871764,0.00014849118],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9996584,0.0000015083806,0.00009883825,0.000065507185,0.000045624314,0.00013012317],"domain_scores_gemma":[0.99988663,0.000006208261,0.0000039981323,0.000083827275,0.0000061556107,0.000013202807],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000020201685,0.00006089461,0.00009109141,0.000038267623,0.000009376483,0.0000037536395,0.00008525816,0.0000726685,0.00018028429],"category_scores_gemma":[0.000015894579,0.0000512246,0.000008440554,0.00007522796,0.00002318849,0.000047529862,0.00001457664,0.000052621548,0.000070150716],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000017106851,0.00008099179,0.00873998,0.00023072137,0.00002735496,0.00020471739,0.0008155923,0.0010624069,0.96930283,0.0030814013,0.012586942,0.00384993],"study_design_scores_gemma":[0.00012664925,0.00000585855,0.0025241,0.000008847487,7.145309e-7,0.000024978175,0.0000686639,0.00033185733,0.9958,0.0005928669,0.0004186991,0.00009673115],"about_ca_topic_score_codex":0.000008608568,"about_ca_topic_score_gemma":0.0000035423018,"teacher_disagreement_score":0.02649718,"about_ca_system_score_codex":0.000016839827,"about_ca_system_score_gemma":0.0000046414393,"threshold_uncertainty_score":0.20888786},"labels":[],"label_agreement":null},{"id":"W1985562453","doi":"10.1109/tvlsi.2012.2226762","title":"Mitigating the Impact of Process Variation on the Performance of 3-D Integrated Circuits","year":2013,"lang":"en","type":"article","venue":"IEEE Transactions on Very Large Scale Integration (VLSI) Systems","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":10,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Interconnection; Process variation; Computer science; Integrated circuit design; Integrated circuit; Process (computing); Benchmark (surveying); Implementation; Electronic engineering; Computer engineering; Embedded system; Engineering; Telecommunications","score_opus":0.01036764873318214,"score_gpt":0.21942198324311027,"score_spread":0.20905433450992814,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1985562453","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.8587182,0.000041877563,0.13906148,0.00005016826,0.00046282107,0.000670372,0.00008752878,0.00023130827,0.00067621085],"genre_scores_gemma":[0.999471,0.00003473161,0.000025491057,0.000008493539,0.000027969229,0.0002925208,0.000008789399,0.000027074959,0.00010393102],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99871534,0.00008588088,0.0005265405,0.00015976459,0.00028842795,0.00022406588],"domain_scores_gemma":[0.9989184,0.00020038185,0.00016991876,0.0003916383,0.0002898823,0.00002977878],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00030053232,0.00022423796,0.00026025114,0.00017066427,0.00018182951,0.00005789645,0.00028344858,0.0001687479,0.00010445955],"category_scores_gemma":[0.000025880656,0.00012118825,0.00015374797,0.00057990715,0.000085760264,0.00033679558,9.815953e-7,0.00044709188,0.000041776635],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000034435627,0.00032040244,0.0006108921,0.00036438296,0.0004054689,3.9969757e-7,0.0059242467,0.8796699,0.09601861,0.0005829228,0.00084839284,0.015219967],"study_design_scores_gemma":[0.00025261662,0.00028303856,0.002471054,0.0005394861,0.00003083911,0.000007109086,0.0049462384,0.7479599,0.24326466,0.000056755303,0.000014653074,0.00017365736],"about_ca_topic_score_codex":0.00033532406,"about_ca_topic_score_gemma":0.0000327924,"teacher_disagreement_score":0.14724605,"about_ca_system_score_codex":0.0001471473,"about_ca_system_score_gemma":0.000051329524,"threshold_uncertainty_score":0.49419132},"labels":[],"label_agreement":null},{"id":"W1986999073","doi":"10.1109/ccece.2014.6901056","title":"Development of a compact thermal model for electronic package","year":2014,"lang":"en","type":"article","venue":"","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":4,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Toronto Metropolitan University","funders":"","keywords":"Resistor; Ball grid array; Computer science; MATLAB; Delphi; Process (computing); Boundary (topology); Electronic engineering; Computer engineering; Topology (electrical circuits); Computational science; Simulation; Engineering; Electrical engineering; Mathematics; Materials science; Operating system","score_opus":0.014610585837551166,"score_gpt":0.21181398812573327,"score_spread":0.1972034022881821,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1986999073","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.37693232,0.000024553507,0.61597764,0.000012315185,0.000008551909,0.000052303265,5.717631e-7,0.00025303022,0.0067387074],"genre_scores_gemma":[0.9784222,0.0000025296915,0.0213785,0.0000069588564,0.0000040279947,0.0000072749062,0.000001568455,0.000009070759,0.00016782718],"study_design_codex":"bench_or_experimental","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99969625,9.202762e-7,0.00008181381,0.00004076074,0.00003169611,0.00014853825],"domain_scores_gemma":[0.9998785,0.00001260581,0.000007730636,0.00008434195,0.000007471561,0.000009348324],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00005142911,0.000051018324,0.00007740207,0.000022987673,0.000012960419,0.0000023877633,0.00007396911,0.000032352895,0.00000974694],"category_scores_gemma":[0.0000053224016,0.000040077543,0.000019982563,0.000023744979,0.0000087659455,0.000020797248,0.0000071158593,0.000034690966,0.0000053668923],"study_design_candidate":"simulation_or_modeling","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000023625304,0.000069684436,0.00040550742,0.00028571178,0.00022915374,1.1973634e-7,0.0016482596,0.26672783,0.28460518,0.23532453,0.004213988,0.20646642],"study_design_scores_gemma":[0.00013207635,0.000012317922,0.00019354749,0.0000034032216,0.0000023777866,1.2705785e-7,0.000028098702,0.8510396,0.14535591,0.0015090127,0.0016616727,0.00006185643],"about_ca_topic_score_codex":5.00465e-7,"about_ca_topic_score_gemma":0.000008057414,"teacher_disagreement_score":0.6014899,"about_ca_system_score_codex":0.000019725254,"about_ca_system_score_gemma":0.0000135614455,"threshold_uncertainty_score":0.16343148},"labels":[],"label_agreement":null},{"id":"W1996662813","doi":"10.1109/ltb-3d.2014.6886197","title":"Metal-assisted hermetic wafer-level packaging","year":2014,"lang":"en","type":"article","venue":"","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Dalsa Corporation; Université de Montréal; Polytechnique Montréal","funders":"","keywords":"Materials science; Wafer; Tin; Thermocompression bonding; Wafer bonding; Wire bonding; Wafer-level packaging; Layer (electronics); Electronic packaging; Soldering; Wafer-scale integration; Integrated circuit packaging; Nanotechnology; Optoelectronics; Metallurgy; Composite material; Computer science; Integrated circuit","score_opus":0.022156673587287536,"score_gpt":0.19801104520714824,"score_spread":0.1758543716198607,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1996662813","genre_codex":"other","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.35959655,0.0002926648,0.25229716,0.00048194407,0.0005162694,0.00012698537,0.0000029619928,0.00643961,0.38024583],"genre_scores_gemma":[0.99074185,0.000013615379,0.007277376,0.000050289054,0.000024045159,0.0000080538675,0.0000018243641,0.000020614023,0.0018623385],"study_design_codex":"design_other","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9995157,0.000007066899,0.000108219014,0.00009889772,0.00007449125,0.00019562469],"domain_scores_gemma":[0.9996817,0.00003373186,0.000008242103,0.0002354401,0.000011324875,0.000029556842],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000074001204,0.000102603844,0.0001262386,0.000067431974,0.000029755236,0.000018804594,0.00013256047,0.00006549701,0.00016489901],"category_scores_gemma":[0.000039789564,0.000083681654,0.000040200863,0.00013005533,0.000027431077,0.0000617562,0.0000327777,0.000097557066,0.00027768794],"study_design_candidate":"design_other","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0000029122698,0.00004455755,0.0027424346,0.00016095191,0.00022311643,0.000011013817,0.00013674695,0.0016287987,0.044575136,0.070320465,0.016372897,0.863781],"study_design_scores_gemma":[0.0020271454,0.00016802295,0.17978872,0.00012702038,0.00018841331,0.000091136295,0.0010241957,0.2269915,0.3633812,0.031126162,0.1928837,0.002202762],"about_ca_topic_score_codex":0.0000069915436,"about_ca_topic_score_gemma":0.000009430564,"teacher_disagreement_score":0.8615782,"about_ca_system_score_codex":0.000018981415,"about_ca_system_score_gemma":0.000002529209,"threshold_uncertainty_score":0.35692093},"labels":[],"label_agreement":null},{"id":"W1999404028","doi":"10.1088/0268-1242/24/3/035011","title":"In-place bonding of GaAs/InGaAs/GaAs heterostructures to GaAs (0 0 1)","year":2009,"lang":"en","type":"article","venue":"Semiconductor Science and Technology","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":11,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Simon Fraser University","funders":"British Columbia Knowledge Development Fund; Natural Sciences and Engineering Research Council of Canada","keywords":"Heterojunction; Optoelectronics; Gallium arsenide; Materials science; Chemistry","score_opus":0.006685112849239768,"score_gpt":0.2350222711386734,"score_spread":0.22833715828943366,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1999404028","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99611765,0.0006591441,0.00003872195,0.0013632161,0.0002571827,0.00015567378,0.0000039686274,0.0005257252,0.00087870273],"genre_scores_gemma":[0.9980985,0.00007565851,0.001611651,0.00012526136,0.000015364765,0.0000071150316,3.8588152e-7,0.000009948049,0.000056121782],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9986836,0.000004192233,0.00025142837,0.00036067143,0.00019671994,0.000503433],"domain_scores_gemma":[0.99941516,0.000020515807,0.00004035445,0.00038953192,0.00007099453,0.00006344421],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00021716535,0.00017887152,0.00027406547,0.0012946844,0.0000811313,0.000028952141,0.00061039225,0.00022159221,0.000011613141],"category_scores_gemma":[0.0002563591,0.00016471693,0.000018679688,0.0022007928,0.0006286286,0.00032982702,0.00014079863,0.0002965258,0.000007184906],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0000022457386,0.000007452594,0.0016546522,0.0000125929,0.0000029394882,0.000008350151,0.00018867943,0.000041549447,0.9738859,0.015148841,0.00056419236,0.008482588],"study_design_scores_gemma":[0.00020825346,0.00018285778,0.001915469,0.000052375948,0.0000041679164,0.00007430995,0.00070732454,0.00032231316,0.9752725,0.018412862,0.0025979208,0.00024965827],"about_ca_topic_score_codex":0.000010672841,"about_ca_topic_score_gemma":0.0000118687785,"teacher_disagreement_score":0.00823293,"about_ca_system_score_codex":0.00009109451,"about_ca_system_score_gemma":0.000046991237,"threshold_uncertainty_score":0.6716961},"labels":[],"label_agreement":null},{"id":"W2006272044","doi":"10.1016/j.mee.2011.10.020","title":"Characteristics of electroplated Sn bumps fabricated without a PR mould on a Si chip for 3D packaging","year":2011,"lang":"en","type":"article","venue":"Microelectronic Engineering","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":6,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Electroplating; Chip; Materials science; Optoelectronics; Chip-scale package; Nanotechnology; Electrical engineering; Engineering; Wafer","score_opus":0.010819649372932274,"score_gpt":0.18486243117465587,"score_spread":0.17404278180172358,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2006272044","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.84628874,0.00095054903,0.14968267,0.000019575002,0.00015078219,0.0004973041,0.000025286994,0.0018438137,0.00054125395],"genre_scores_gemma":[0.9922688,0.00020357582,0.00716904,0.000011397615,0.000043802735,0.000093012786,0.00003098273,0.0001241986,0.000055197448],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9984444,0.000006295971,0.00037965592,0.00026272022,0.00010350516,0.00080346933],"domain_scores_gemma":[0.999429,0.000044632463,0.00007226784,0.00034455012,0.000052065843,0.000057501235],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.00009296,0.00034598852,0.00042708483,0.0002843178,0.00004132912,0.000015599488,0.00028384652,0.000196823,0.000016564452],"category_scores_gemma":[0.00006231825,0.00035865293,0.00010303354,0.00035124985,0.000028867662,0.00007885007,0.000029826431,0.0004673267,0.000010861797],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00008884803,0.00007866651,0.0005018746,0.00043317434,0.00034780215,0.0000092220225,0.00040566927,0.0017428363,0.97752535,0.002395813,0.00012963482,0.016341124],"study_design_scores_gemma":[0.0006932741,0.00039379855,0.0015390083,0.00014278994,0.000075533055,0.000035240526,0.000017408409,0.12974836,0.86426336,0.00010975717,0.002440865,0.00054062164],"about_ca_topic_score_codex":0.000008748123,"about_ca_topic_score_gemma":0.0000023443172,"teacher_disagreement_score":0.14598003,"about_ca_system_score_codex":0.00020273456,"about_ca_system_score_gemma":0.00003498597,"threshold_uncertainty_score":0.9998866},"labels":[],"label_agreement":null},{"id":"W2012060981","doi":"10.1115/ipack2005-73219","title":"Future of Thermal Management of High End Video Cards in ATX and BTX","year":2005,"lang":"en","type":"article","venue":"","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Windsor","funders":"","keywords":"Computer science; Graphics processing unit; Graphics; Focus (optics); Multimedia; Unit (ring theory); Computer graphics (images); Embedded system; Operating system","score_opus":0.0035860063266212926,"score_gpt":0.17829922762385467,"score_spread":0.17471322129723338,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2012060981","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.97553456,0.0011076092,0.00023374658,0.00013353798,0.000035071702,0.0000485384,0.000001983752,0.00008726598,0.022817688],"genre_scores_gemma":[0.99589604,0.00040617734,0.0035267198,0.0000049470136,0.00001581586,0.0000027609992,4.8101543e-7,0.000004635152,0.00014241131],"study_design_codex":"design_other","study_design_gemma":"observational","domain_scores_codex":[0.9997518,0.0000016437288,0.00008815191,0.000045356453,0.00004603117,0.00006700694],"domain_scores_gemma":[0.99988335,0.000004317535,0.000007823107,0.00009421992,0.000003925784,0.000006332565],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000028953791,0.000045584475,0.000086517175,0.000041998424,0.0000029010819,0.0000013590219,0.000052816064,0.00004251596,0.00006423193],"category_scores_gemma":[4.7074113e-7,0.000036836485,0.00001117264,0.000057056077,0.00002024052,0.000032609165,0.000032000185,0.000039142735,0.0000014017701],"study_design_candidate":"design_other","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000010792346,0.000039797924,0.006989731,0.00044553017,0.00014482706,0.000011029868,0.00044065222,0.01135069,0.0050105997,0.08307071,0.001572793,0.89091283],"study_design_scores_gemma":[0.002156099,0.00011827281,0.65607405,0.00016926728,0.00005848502,0.000005278189,0.004993449,0.0068586455,0.3007821,0.002321656,0.025976252,0.0004864018],"about_ca_topic_score_codex":0.000029511128,"about_ca_topic_score_gemma":0.0000305958,"teacher_disagreement_score":0.89042646,"about_ca_system_score_codex":0.000008856195,"about_ca_system_score_gemma":9.131271e-7,"threshold_uncertainty_score":0.15021484},"labels":[],"label_agreement":null},{"id":"W2014715605","doi":"10.1007/s13391-013-3260-6","title":"Analysis of the electrical characteristics and structure of Cu-Filled TSV with thermal shock test","year":2014,"lang":"en","type":"article","venue":"Electronic Materials Letters","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":16,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo; Western University","funders":"Small and Medium Business Administration","keywords":"Materials science; Thermal shock; Composite material; Shock (circulatory); Thermal; Structural engineering; Metallurgy; Nuclear engineering; Thermodynamics; Engineering","score_opus":0.0016685484056698523,"score_gpt":0.15487742625327905,"score_spread":0.1532088778476092,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2014715605","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99911004,0.000049908427,0.00041435898,0.00015949119,0.000041532374,0.000093965406,0.000030823012,0.00007362066,0.000026231099],"genre_scores_gemma":[0.9997819,0.0000238624,0.00006003112,0.00007069668,0.000028524068,0.0000035004766,0.000009448578,0.000017112485,0.0000048966212],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.999256,0.0000301005,0.00021746435,0.000117517404,0.000114378054,0.0002645334],"domain_scores_gemma":[0.99954987,0.000065192355,0.00009431158,0.0002602737,0.000016021304,0.00001435629],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00007066364,0.00013728738,0.00037293567,0.0001017031,0.000025599855,0.000013852145,0.00018582835,0.00007265899,0.000066400455],"category_scores_gemma":[0.00003891135,0.000085266125,0.000039414434,0.00032229835,0.000091134825,0.000028820245,0.000029061854,0.00011571721,3.5441252e-7],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000015215318,0.000005739561,0.010084062,0.00003361099,0.0002999798,2.5220177e-7,0.00003732572,0.00030032196,0.98830223,0.00043270836,0.000036035864,0.00045251692],"study_design_scores_gemma":[0.00025576557,0.00011072164,0.15297051,0.000014658324,0.00043242495,0.0000043987266,0.0000057303446,0.0017350187,0.8441432,0.000044951317,0.000126606,0.00015598135],"about_ca_topic_score_codex":0.00001133559,"about_ca_topic_score_gemma":0.000011050727,"teacher_disagreement_score":0.144159,"about_ca_system_score_codex":0.000028985753,"about_ca_system_score_gemma":0.000011731077,"threshold_uncertainty_score":0.3477052},"labels":[],"label_agreement":null},{"id":"W2029637008","doi":"10.1143/jjap.47.2526","title":"Void-Free Room-Temperature Silicon Wafer Direct Bonding Using Sequential Plasma Activation","year":2008,"lang":"en","type":"article","venue":"Japanese Journal of Applied Physics","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":36,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Wafer; Anodic bonding; Plasma activation; Materials science; Annealing (glass); Void (composites); Reactive-ion etching; Wafer bonding; Direct bonding; Microelectromechanical systems; Silicon; Composite material; Plasma; Plasma cleaning; Etching (microfabrication); Analytical Chemistry (journal); Optoelectronics; Chemistry; Layer (electronics)","score_opus":0.01840807697793023,"score_gpt":0.21599680587353126,"score_spread":0.19758872889560103,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2029637008","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.996992,0.000019327223,0.00043919258,0.000024666622,0.00016954372,0.000082353676,0.0000018953143,0.00017663617,0.0020944194],"genre_scores_gemma":[0.99831384,0.000017203032,0.0011968791,0.000017915669,0.00039890752,0.0000028942686,0.0000022965435,0.00003417014,0.000015899821],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99908966,0.0000081247235,0.00029777194,0.00010556047,0.00027397342,0.00022490504],"domain_scores_gemma":[0.9994774,0.00005110916,0.00013203356,0.00021452474,0.000069564165,0.00005537025],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00009156554,0.0001841611,0.00028320507,0.000097761804,0.00014183055,0.000029370009,0.0002077899,0.00012713092,0.0000074136547],"category_scores_gemma":[0.000020729387,0.0001588923,0.00010165792,0.00031453083,0.000046338133,0.00035992955,0.00004442504,0.00041782577,0.000005415552],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000052666368,0.000030408004,0.00013388917,0.00002073678,0.00007690555,0.000022731465,0.0010705584,0.12833016,0.8684402,0.0007241861,0.00030598167,0.00079157617],"study_design_scores_gemma":[0.0008548605,0.00003677313,0.00042934628,0.000038593524,0.000032375854,0.00019915838,0.00077894947,0.01100857,0.9844765,0.0016891117,0.0002143861,0.00024135105],"about_ca_topic_score_codex":0.000004335936,"about_ca_topic_score_gemma":6.186195e-7,"teacher_disagreement_score":0.11732159,"about_ca_system_score_codex":0.00012642679,"about_ca_system_score_gemma":0.000030922907,"threshold_uncertainty_score":0.64794403},"labels":[],"label_agreement":null},{"id":"W2030037071","doi":"10.1007/978-3-662-54357-3_43","title":"Packaging and Reliability Issues in Micro/Nano Systems","year":2017,"lang":"en","type":"book-chapter","venue":"Springer handbooks","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":10,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of British Columbia","funders":"","keywords":"Nanoelectromechanical systems; Microelectromechanical systems; Packaging engineering; Microelectronics; Wafer-level packaging; Reliability (semiconductor); Electronic packaging; Wafer; Engineering; Nanotechnology; Systems engineering; Manufacturing engineering; Materials science; Mechanical engineering; Electrical engineering","score_opus":0.012606638926067717,"score_gpt":0.21136508149974134,"score_spread":0.19875844257367362,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2030037071","genre_codex":"other","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"other","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.014445735,0.06134066,0.00027608263,0.000091005204,0.0014196611,0.00069394195,0.00003479219,0.0015150913,0.920183],"genre_scores_gemma":[0.50128454,0.009034067,0.0011224038,0.0000130389835,0.00035825116,0.000056881363,0.000010004291,0.00024426947,0.48787656],"study_design_codex":"design_other","study_design_gemma":"not_applicable","domain_scores_codex":[0.9988595,0.000005065395,0.00031644682,0.00038283228,0.00013059596,0.00030552965],"domain_scores_gemma":[0.9989713,0.000031376967,0.000082041384,0.00083685387,0.0000274433,0.000051002415],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.00018297379,0.00038074036,0.0005444229,0.0001998969,0.00008034278,0.00013393683,0.00029877792,0.0005231329,0.000019099729],"category_scores_gemma":[0.000027839033,0.00037564285,0.000068169196,0.000006172236,0.00019550933,0.000085048996,0.000188501,0.00054273714,0.000063285675],"study_design_candidate":"not_applicable","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00021770984,0.00015151688,0.0681944,0.032538474,0.0023326902,0.0028507595,0.007959621,0.0034136998,0.041402984,0.39090484,0.04601489,0.4040184],"study_design_scores_gemma":[0.00085058715,0.000062909035,0.0017410675,0.0068279738,0.00010076075,0.000045414636,0.00007768451,0.00074124575,0.008877482,0.02665694,0.9520726,0.0019453117],"about_ca_topic_score_codex":0.00006783041,"about_ca_topic_score_gemma":0.000053603486,"teacher_disagreement_score":0.9060577,"about_ca_system_score_codex":0.000102898426,"about_ca_system_score_gemma":0.000016114715,"threshold_uncertainty_score":0.9998695},"labels":[],"label_agreement":null},{"id":"W2039760015","doi":"10.1145/1514932.1514935","title":"Early analysis for power distribution networks","year":2009,"lang":"en","type":"article","venue":"","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Apache (Canada)","funders":"","keywords":"Computer science; Node (physics); Routing (electronic design automation); Power (physics); Chip; Abstraction; Power domains; Reliability engineering; Integrated circuit design; Embedded system; Network planning and design; Design methods; Electronic engineering; Voltage; Engineering; Electrical engineering; Computer network; Telecommunications","score_opus":0.005102001563344642,"score_gpt":0.19388051351890967,"score_spread":0.18877851195556503,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2039760015","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.09644566,0.000103836086,0.8993299,0.000083775965,0.000037509435,0.000046642308,0.0000058027426,0.0007281623,0.0032187314],"genre_scores_gemma":[0.9988989,0.000012710428,0.0008659877,0.000017392074,0.00001239072,0.0000043612317,0.000033040367,0.000002679285,0.00015249297],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9997476,8.194742e-7,0.000059758662,0.000052906376,0.00002554247,0.00011339297],"domain_scores_gemma":[0.9998645,0.000009504379,0.000004872854,0.00009688188,0.000011339161,0.000012863331],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0000239706,0.000045902416,0.00007245894,0.00003121467,0.000018224024,0.000013507467,0.000050455572,0.000059803093,0.000027676917],"category_scores_gemma":[0.0000064508235,0.00003880586,0.00006330292,0.00024714315,0.000005839659,0.000039339087,0.0000032550847,0.00003612395,0.0000048469583],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00002245438,0.000064954336,0.020023776,0.000010070872,0.0012370462,0.000004136743,0.0000823682,0.6129755,0.0004023233,0.1611092,0.06983207,0.13423613],"study_design_scores_gemma":[0.000271505,0.00014185238,0.39968768,0.000003421413,0.00021552104,5.445029e-7,0.000053806707,0.58083,0.0016210985,0.005035152,0.011844991,0.00029445346],"about_ca_topic_score_codex":0.0000018605508,"about_ca_topic_score_gemma":0.0000017821486,"teacher_disagreement_score":0.9024533,"about_ca_system_score_codex":0.00001438793,"about_ca_system_score_gemma":6.7198135e-7,"threshold_uncertainty_score":0.15824571},"labels":[],"label_agreement":null},{"id":"W2040339639","doi":"10.1109/tdmr.2015.2401035","title":"Study of Near-Surface Stresses in Silicon Around Through-Silicon Vias at Elevated Temperatures by Raman Spectroscopy and Simulations","year":2015,"lang":"en","type":"article","venue":"IEEE Transactions on Device and Materials Reliability","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":12,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of British Columbia","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Materials science; Silicon; Stress (linguistics); Raman spectroscopy; Thermal expansion; Shrinkage; Composite material; Through-silicon via; Spectroscopy; Optoelectronics; Optics","score_opus":0.019685148286413143,"score_gpt":0.2652793448116388,"score_spread":0.24559419652522563,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2040339639","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99816114,0.00023301081,0.00043632882,0.000047904552,0.00020283868,0.00054320897,0.00013785495,0.00021631696,0.000021418056],"genre_scores_gemma":[0.99950475,0.00021146458,0.00020389682,0.000010777215,0.0000065349595,0.00002205237,0.00000763756,0.000019500178,0.000013390272],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9989507,0.000077051154,0.0003613843,0.00028212336,0.00012347997,0.00020522934],"domain_scores_gemma":[0.9994263,0.00012345078,0.000042620555,0.00030470287,0.00004799378,0.000054910364],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00017597606,0.00020221114,0.0003612602,0.000032384865,0.00009072843,0.00006240344,0.00007843727,0.00014056107,0.00002394772],"category_scores_gemma":[0.000019222854,0.00018327143,0.000017612992,0.00018342107,0.000121058714,0.00021842957,0.000004705784,0.00014008017,0.0000027650294],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00024848044,0.0007612823,0.0079471115,0.00029883796,0.0000807771,0.0000038295766,0.003000208,0.09561645,0.89172417,0.000011231455,0.00017980601,0.00012782343],"study_design_scores_gemma":[0.0011438717,0.00040471394,0.0026462914,0.000039470142,0.000045918314,0.0000028961354,0.0021190178,0.0017203906,0.9913173,0.00023911503,0.000110339424,0.0002107087],"about_ca_topic_score_codex":0.0006872707,"about_ca_topic_score_gemma":0.00065242464,"teacher_disagreement_score":0.09959311,"about_ca_system_score_codex":0.000107715015,"about_ca_system_score_gemma":0.000017717006,"threshold_uncertainty_score":0.7473592},"labels":[],"label_agreement":null},{"id":"W2040401447","doi":"10.1109/tim.2014.2321461","title":"Low-Contact Resistance Probe Card Using MEMS Technology","year":2014,"lang":"en","type":"article","venue":"IEEE Transactions on Instrumentation and Measurement","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":15,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Windsor","funders":"Natural Sciences and Engineering Research Council of Canada; CMC Microsystems","keywords":"Microelectromechanical systems; Wafer; Contact resistance; Wafer testing; Return loss; Materials science; Die (integrated circuit); Integrated circuit; Electrical engineering; Insertion loss; Electronic circuit; Electronic engineering; Optoelectronics; Engineering; Nanotechnology; Layer (electronics)","score_opus":0.023848308644907713,"score_gpt":0.22097939835386346,"score_spread":0.19713108970895574,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2040401447","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.21249837,0.0000967092,0.7847441,0.00020209489,0.0004546238,0.00027227198,0.000006132618,0.0006359672,0.0010897547],"genre_scores_gemma":[0.9971457,0.00007832222,0.0025975083,0.000041923857,0.000010693874,0.00006219339,6.4580433e-7,0.000018177854,0.00004479686],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9992728,0.000011830408,0.00018054101,0.0001640257,0.00019927438,0.00017152652],"domain_scores_gemma":[0.999715,0.0000063055895,0.000027735836,0.00016136283,0.00005087337,0.000038743776],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00012267398,0.00013869336,0.00013809087,0.00021025339,0.0001349945,0.000025777668,0.000066623295,0.00009958896,0.000015226852],"category_scores_gemma":[0.0000034632885,0.00013910056,0.000030503094,0.00018786709,0.000044550216,0.00010903907,6.5213163e-7,0.00015393204,0.000008788779],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00007173925,0.00020235109,0.0002920488,0.00043246712,0.0003852567,0.000002413256,0.0006495539,0.020285605,0.6263182,0.0033321488,0.00023417347,0.347794],"study_design_scores_gemma":[0.0010582726,0.00011280713,0.00027774458,0.000113930604,0.000099214434,0.0000066918496,0.00059212785,0.0036353748,0.99085194,0.0007979982,0.002159319,0.00029455518],"about_ca_topic_score_codex":0.000008076516,"about_ca_topic_score_gemma":0.00009722428,"teacher_disagreement_score":0.78464735,"about_ca_system_score_codex":0.00019390386,"about_ca_system_score_gemma":0.000014368502,"threshold_uncertainty_score":0.5672356},"labels":[],"label_agreement":null},{"id":"W2042079275","doi":"10.1063/1.4807905","title":"Fast atom beam-activated n-Si/n-GaAs wafer bonding with high interfacial transparency and electrical conductivity","year":2013,"lang":"en","type":"article","venue":"Journal of Applied Physics","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":39,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Polytechnique Montréal","funders":"","keywords":"Materials science; Argon; Annealing (glass); Wafer; Atom (system on chip); Wafer bonding; Electrical resistivity and conductivity; Helium; Atomic physics; Optoelectronics; Composite material","score_opus":0.009779548144638854,"score_gpt":0.19164968598803206,"score_spread":0.1818701378433932,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2042079275","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9843197,0.00004244793,0.014242738,0.00002744106,0.00007312414,0.00010864033,0.0000023924797,0.00010667198,0.0010768485],"genre_scores_gemma":[0.99846464,0.000029576899,0.0013250716,0.000011484051,0.00012596474,0.00000688115,0.0000011915932,0.000025649095,0.0000095358655],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9992958,0.000004257107,0.00022109736,0.000101071506,0.00016426737,0.00021352957],"domain_scores_gemma":[0.9996615,0.000032806507,0.00009417978,0.000095767056,0.00005250148,0.000063234584],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000041362477,0.00016967213,0.00030556973,0.00006374492,0.000045883564,0.000043061347,0.0001233594,0.00009072034,0.000017134134],"category_scores_gemma":[0.000002172233,0.00012756941,0.000037188816,0.00021695279,0.00007596179,0.00027712382,0.000015988206,0.0004956552,0.000006449221],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000121765035,0.000108738495,0.0008985058,0.000052098898,0.0003151036,0.000011394539,0.000621788,0.0068870937,0.9393929,0.010208976,0.00067041896,0.040711187],"study_design_scores_gemma":[0.001466705,0.00034758245,0.005831079,0.00006515698,0.00009814718,0.00005624433,0.00040537238,0.0027554582,0.9728894,0.014958715,0.00067516434,0.0004509364],"about_ca_topic_score_codex":0.0000056345507,"about_ca_topic_score_gemma":5.625197e-7,"teacher_disagreement_score":0.04026025,"about_ca_system_score_codex":0.000055444285,"about_ca_system_score_gemma":0.000019076388,"threshold_uncertainty_score":0.520213},"labels":[],"label_agreement":null},{"id":"W2047022984","doi":"10.1142/s0219581x12400157","title":"THROUGH SILICON VIAS INTEGRABLE WITH THIN-FILM PIEZOELECTRIC STRUCTURES","year":2012,"lang":"en","type":"article","venue":"International Journal of Nanoscience","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":2,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Université de Sherbrooke","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Materials science; Wafer; Piezoelectricity; Optoelectronics; Microfabrication; Silicon on insulator; Ground plane; Silicon; Layer (electronics); Capacitance; Electronic engineering; Nanotechnology; Electrical engineering; Composite material; Fabrication; Electrode","score_opus":0.011514472230108493,"score_gpt":0.2389035511121158,"score_spread":0.22738907888200732,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2047022984","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9198401,0.0021875245,0.06643143,0.00043136434,0.0025342728,0.000054031814,0.0000037213674,0.00013176599,0.008385774],"genre_scores_gemma":[0.9953,0.00022214267,0.00413118,0.000088110966,0.00015912084,0.0000010391805,3.3336963e-7,0.00000845746,0.00008963469],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99904853,0.000007818251,0.00019977686,0.000064010914,0.00046819306,0.00021165854],"domain_scores_gemma":[0.9995666,0.000046808105,0.0001035951,0.00007827222,0.00016535632,0.000039381506],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0001447965,0.0000979931,0.000115074174,0.00016978878,0.000035463207,0.00005389,0.000637551,0.000048111426,0.000058546582],"category_scores_gemma":[0.00010042339,0.00006502125,0.000042561118,0.000253052,0.00009865992,0.00088088267,0.000032953692,0.0002411326,0.000008839733],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00038566938,0.0006174185,0.08511987,0.000080247795,0.001120715,0.0004444767,0.008285077,0.1343192,0.28497386,0.18897775,0.06458864,0.23108707],"study_design_scores_gemma":[0.0017952597,0.00089773623,0.029003303,0.0003275385,0.00007218488,0.0050797877,0.0016091103,0.022549754,0.83298326,0.028337989,0.0764166,0.0009274724],"about_ca_topic_score_codex":0.000010175643,"about_ca_topic_score_gemma":0.000002113488,"teacher_disagreement_score":0.5480094,"about_ca_system_score_codex":0.00009781201,"about_ca_system_score_gemma":0.000040604496,"threshold_uncertainty_score":0.265149},"labels":[],"label_agreement":null},{"id":"W204871601","doi":"10.1007/978-3-642-18293-8_11","title":"Introduction to MEMS Packaging","year":2012,"lang":"en","type":"book-chapter","venue":"","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":8,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of British Columbia","funders":"","keywords":"Nanoelectromechanical systems; Microelectromechanical systems; Reliability (semiconductor); Packaging engineering; Engineering; Systems engineering; Nanotechnology; Mechanical engineering; Materials science; Physics","score_opus":0.01068845123115368,"score_gpt":0.1846213789049824,"score_spread":0.17393292767382873,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W204871601","genre_codex":"other","genre_gemma":"other","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"other","genre_consensus":"other","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.000027354907,0.0010029292,0.008441198,0.0007393496,0.0010997639,0.0001072773,0.0000030023218,0.0022616924,0.98631746],"genre_scores_gemma":[0.018979317,0.0004419478,0.0021772343,0.000052836596,0.0029471046,0.000010379693,0.000016711547,0.000100805555,0.97527367],"study_design_codex":"not_applicable","study_design_gemma":"not_applicable","domain_scores_codex":[0.9995169,3.9238145e-7,0.00010951036,0.00012869167,0.00007851489,0.00016597312],"domain_scores_gemma":[0.9996417,0.000005676088,0.000011299564,0.00028689718,0.000013886348,0.000040495685],"candidate_categories":["insufficient_payload"],"consensus_categories":["insufficient_payload"],"category_scores_codex":[0.00003743116,0.00016912463,0.00015167372,0.00013762023,0.000016697932,0.000012770619,0.000097139804,0.0002139516,0.0018557116],"category_scores_gemma":[0.0000059708905,0.00015571591,0.000039971837,0.000016815662,0.000014803211,0.000055152224,0.000045562014,0.00021804996,0.0024985936],"study_design_candidate":"not_applicable","study_design_consensus":"not_applicable","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[9.6037e-7,0.0000017144614,0.0000046099103,0.000052311232,0.0000783106,0.0000020027649,0.000047492325,0.00024343439,0.0005716629,0.32558778,0.43339232,0.24001741],"study_design_scores_gemma":[0.00001845474,0.0000070202545,0.0000060790503,0.000015544167,0.0000148213785,0.000005085105,0.000011155074,0.000023285736,0.0021410873,0.0045229946,0.9930244,0.00021007698],"about_ca_topic_score_codex":0.0000016747774,"about_ca_topic_score_gemma":0.0000034852196,"teacher_disagreement_score":0.55963206,"about_ca_system_score_codex":0.00006145024,"about_ca_system_score_gemma":0.000002428284,"threshold_uncertainty_score":0.99905676},"labels":[],"label_agreement":null},{"id":"W2049678342","doi":"10.1149/1.2982906","title":"Hybrid Bonding (Plasma activation and Anodic bonding) for Vacuum Sealing","year":2008,"lang":"en","type":"article","venue":"ECS Transactions","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Optech (Canada)","funders":"","keywords":"Anodic bonding; Plasma; Microelectromechanical systems; Anode; Materials science; Wire bonding; Composite material; Nanotechnology; Chemistry; Layer (electronics); Electrical engineering; Electrode; Physical chemistry; Engineering; Physics","score_opus":0.019377649874186092,"score_gpt":0.21278170627838747,"score_spread":0.19340405640420139,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2049678342","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.5811253,0.000087805856,0.4168258,0.00023193387,0.00016579742,0.0001362395,0.000019384606,0.00073804887,0.00066969095],"genre_scores_gemma":[0.99443644,0.00011494809,0.00473273,0.0000091311285,0.000036071804,0.0000560629,0.000007971054,0.000026883654,0.000579732],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99949735,0.0000031008376,0.00012137308,0.00012526156,0.000061655766,0.00019125304],"domain_scores_gemma":[0.9997701,0.00006401171,0.000015122739,0.00009924054,0.000015570602,0.00003597712],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000039998635,0.00010729043,0.000109341396,0.00013956688,0.00030117057,0.000017732013,0.000042230306,0.00006719378,0.00001625339],"category_scores_gemma":[0.0000076378765,0.00011687316,0.00004594191,0.00011496123,0.00003989961,0.00022045274,0.0000021355452,0.00014166256,0.000004878451],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00017685287,0.0004088641,0.002908081,0.0015775332,0.0012617295,0.0001233206,0.007238777,0.10850403,0.6856691,0.033658043,0.034190282,0.12428339],"study_design_scores_gemma":[0.00126711,0.00009766689,0.0011364736,0.0000802513,0.000085560656,0.0003476246,0.0005130128,0.110145696,0.8134428,0.0027948893,0.06951558,0.0005733025],"about_ca_topic_score_codex":0.000004646168,"about_ca_topic_score_gemma":0.0000024392018,"teacher_disagreement_score":0.41331118,"about_ca_system_score_codex":0.000046841058,"about_ca_system_score_gemma":0.0000099677745,"threshold_uncertainty_score":0.47659492},"labels":[],"label_agreement":null},{"id":"W2050756245","doi":"10.1117/12.525802","title":"Wafer-level vacuum packaging technology based on selective electroplating","year":2004,"lang":"en","type":"article","venue":"Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Institut National d'Optique","funders":"","keywords":"Electroplating; Wafer; Vacuum packing; Wafer-level packaging; Materials science; Manufacturing engineering; Die preparation; Process engineering; Optoelectronics; Engineering; Mechanical engineering; Nanotechnology; Wafer dicing","score_opus":0.009981845563260386,"score_gpt":0.2134091147548415,"score_spread":0.2034272691915811,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2050756245","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9920036,0.0000942455,0.00083299784,0.0024137197,0.00018915796,0.00045809377,0.000032258133,0.00077197945,0.00320393],"genre_scores_gemma":[0.87676656,0.000046878165,0.12268742,0.00006509417,0.00015448849,0.00015605977,0.000004915602,0.000087662345,0.000030899744],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99787706,6.7678294e-9,0.00058244553,0.000394343,0.0005445431,0.0006016026],"domain_scores_gemma":[0.99868107,0.000103852166,0.00019719446,0.00008354997,0.000855301,0.00007900961],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.0002847133,0.0004164148,0.00045055823,0.00031863054,0.00010804487,0.00007393698,0.0009331487,0.00036359907,0.000005113788],"category_scores_gemma":[0.0004724326,0.00036456675,0.0004461021,0.00079156033,0.00021674475,0.00034297808,0.000111015615,0.0006882942,0.0000031920692],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000042565953,0.00008530792,0.00040692647,0.0003166873,0.000346116,2.5840137e-7,0.00008832971,0.006513689,0.536131,0.45444456,0.00074954855,0.0008749867],"study_design_scores_gemma":[0.0016398166,0.00055536954,0.00059724,0.00055251556,0.00011585588,0.000021671933,0.0013785881,0.09410405,0.886853,0.012875847,0.0007136274,0.0005924256],"about_ca_topic_score_codex":0.0000044337053,"about_ca_topic_score_gemma":2.0996862e-7,"teacher_disagreement_score":0.4415687,"about_ca_system_score_codex":0.0004435634,"about_ca_system_score_gemma":0.0000428801,"threshold_uncertainty_score":0.9998806},"labels":[],"label_agreement":null},{"id":"W2053161408","doi":"10.2320/matertrans.m2009314","title":"A New Non-PRM Bumping Process by Electroplating on Si Die for Three Dimensional Packaging","year":2010,"lang":"en","type":"article","venue":"MATERIALS TRANSACTIONS","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":12,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"National Research Foundation of Korea; National Research Foundation","keywords":"Bumping; Materials science; Electroplating; Wafer; Etching (microfabrication); Polishing; Layer (electronics); Metallurgy; Deep reactive-ion etching; Soldering; Chemical-mechanical planarization; Reactive-ion etching; Silicon; Composite material; Optoelectronics","score_opus":0.006401410241892618,"score_gpt":0.21739362184256492,"score_spread":0.2109922116006723,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2053161408","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.5994211,0.000021051063,0.39855176,0.00017270134,0.0006861889,0.0002436499,0.00006077012,0.0006644578,0.0001783307],"genre_scores_gemma":[0.99527526,0.0000050720455,0.004343803,0.00002062309,0.00011444591,0.000111998845,0.000021744709,0.000046242767,0.000060823455],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99926466,0.0000025014506,0.00018774252,0.00016663404,0.000088827306,0.0002896653],"domain_scores_gemma":[0.9997116,0.000049535305,0.000027097514,0.00014684514,0.000019176741,0.00004577538],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00005948079,0.00015935258,0.00016870197,0.00006691798,0.0001729997,0.00005959154,0.00010581771,0.00012286428,0.00017792509],"category_scores_gemma":[0.00001234061,0.00015183717,0.000042306885,0.00007266884,0.000018913077,0.00011180274,0.0000025958825,0.0001821761,0.000016443963],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000016220985,0.000014598124,0.000010025059,0.00008827814,0.000033598913,9.11997e-7,0.000057342837,0.0026348848,0.9874411,0.000116974596,0.00034983375,0.009236193],"study_design_scores_gemma":[0.0003529004,0.000051079547,0.000091308924,0.000058908005,0.000025881258,0.000006585653,0.000031665564,0.0061911084,0.99049747,0.0016539232,0.0008175373,0.0002216085],"about_ca_topic_score_codex":0.000031641128,"about_ca_topic_score_gemma":0.0001259623,"teacher_disagreement_score":0.39585418,"about_ca_system_score_codex":0.000020252794,"about_ca_system_score_gemma":0.000021740434,"threshold_uncertainty_score":0.619174},"labels":[],"label_agreement":null},{"id":"W2053637952","doi":"10.1109/test.2013.6874619","title":"A test probe for TSV using resonant inductive coupling","year":2013,"lang":"en","type":"article","venue":"","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":7,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Windsor","funders":"","keywords":"Coupling (piping); Inductive coupling; Materials science; Inductive sensor; Electronic engineering; RLC circuit; Electrical engineering; Optoelectronics; Computer science; Engineering; Capacitor; Voltage; Composite material","score_opus":0.02624421383172004,"score_gpt":0.225816015112392,"score_spread":0.19957180128067195,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2053637952","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.64623433,0.00022590086,0.34847888,0.00013767096,0.00014977386,0.00070858205,0.000004036663,0.0015159028,0.0025449358],"genre_scores_gemma":[0.9397864,0.000008220157,0.059844326,0.000011451442,0.00003718723,0.00008920827,8.772882e-7,0.000019742023,0.00020258909],"study_design_codex":"bench_or_experimental","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9995975,4.7693686e-7,0.00009197411,0.0000892918,0.000040020484,0.00018077131],"domain_scores_gemma":[0.99977237,0.000053677944,0.000010380516,0.00010759961,0.000037251135,0.000018720672],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000031274074,0.00007825671,0.00008576986,0.000044474706,0.000040434817,0.000023689103,0.00007555668,0.000074149095,0.000037674658],"category_scores_gemma":[0.00006491499,0.000062013554,0.000022271943,0.000081141356,0.000023510795,0.00012218737,0.000025124426,0.00007428561,0.000028275785],"study_design_candidate":"simulation_or_modeling","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000008187094,0.00015120879,0.015431062,0.00047268675,0.00019886604,0.0000065069653,0.0009538565,0.017772382,0.80172735,0.028064592,0.017222732,0.11799054],"study_design_scores_gemma":[0.00023253416,0.00004931025,0.0010832403,0.000040656443,0.000010227239,0.000004200228,0.000890489,0.92872185,0.059708104,0.0066595343,0.0023717205,0.00022814995],"about_ca_topic_score_codex":0.000053168016,"about_ca_topic_score_gemma":0.000004488273,"teacher_disagreement_score":0.91094947,"about_ca_system_score_codex":0.00003748475,"about_ca_system_score_gemma":0.000007650222,"threshold_uncertainty_score":0.25288394},"labels":[],"label_agreement":null},{"id":"W2054838641","doi":"10.1117/12.872967","title":"Full-wafer thermal imaging in ultrahigh epitaxy tools","year":2010,"lang":"en","type":"article","venue":"Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Université de Sherbrooke","funders":"","keywords":"Wafer; Materials science; Enhanced Data Rates for GSM Evolution; Temperature measurement; Graphite; Absorption (acoustics); Optics; Ceramic; Thermal; Optoelectronics; Composite material; Physics; Computer science","score_opus":0.008560013562594445,"score_gpt":0.21049767588584894,"score_spread":0.2019376623232545,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2054838641","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99125206,0.00012697594,0.000045191173,0.0013344386,0.00049880054,0.00040682885,0.00003340778,0.0003777374,0.0059245834],"genre_scores_gemma":[0.9556022,0.000084149964,0.043665178,0.00004523822,0.00030817915,0.00014579597,0.000005566986,0.00008032872,0.00006333621],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99798524,6.8304877e-9,0.0006667895,0.00033290093,0.0004810228,0.0005340099],"domain_scores_gemma":[0.9989533,0.00014574997,0.00015536863,0.00008404473,0.00057094096,0.00009059817],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.0004798333,0.0003643003,0.0004055215,0.00016681038,0.000054312823,0.00013176481,0.0011178614,0.0002681729,0.000028562126],"category_scores_gemma":[0.00051601586,0.00031238797,0.0004442961,0.00035396384,0.0002711949,0.00079143106,0.00014493523,0.00075445924,0.0000041222056],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00003160281,0.000052627973,0.0012685953,0.0002220541,0.0001285883,2.463515e-7,0.00015501094,0.00042003434,0.7631207,0.23181076,0.0011590112,0.0016307331],"study_design_scores_gemma":[0.002812729,0.00031879035,0.015598051,0.0005937981,0.00018313206,0.00007627993,0.0035120621,0.124817125,0.83574694,0.005863068,0.009016708,0.0014613454],"about_ca_topic_score_codex":0.000008342572,"about_ca_topic_score_gemma":6.567984e-7,"teacher_disagreement_score":0.2259477,"about_ca_system_score_codex":0.00010711631,"about_ca_system_score_gemma":0.000019452216,"threshold_uncertainty_score":0.9999328},"labels":[],"label_agreement":null},{"id":"W2055747232","doi":"10.1149/1.2982878","title":"Bonding of Elastically Strain-Relaxed GaAs/InGaAs/GaAs Heterostructures to GaAs(001)","year":2008,"lang":"en","type":"article","venue":"ECS Transactions","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":3,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Simon Fraser University","funders":"British Columbia Knowledge Development Fund; Natural Sciences and Engineering Research Council of Canada","keywords":"Heterojunction; Materials science; Wafer bonding; Optoelectronics; Gallium arsenide; Wafer; Substrate (aquarium); Stress relaxation; Annealing (glass); Layer (electronics); Etch pit density; Strain (injury); Etching (microfabrication); Condensed matter physics; Composite material","score_opus":0.013120704927959036,"score_gpt":0.20587011044503975,"score_spread":0.19274940551708072,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2055747232","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.6949766,0.00020394729,0.29723155,0.00021525323,0.00067520275,0.00025355569,0.00018708987,0.0013894293,0.00486733],"genre_scores_gemma":[0.9921008,0.000067228866,0.0072804415,0.000024444187,0.000040758936,0.000025180349,0.000007202337,0.000043417906,0.0004105724],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99892193,0.000010388004,0.00031668774,0.00020425057,0.00018884965,0.00035787464],"domain_scores_gemma":[0.99945295,0.0000817445,0.000026098856,0.00028948294,0.000039729588,0.000109987595],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000043657044,0.00021163048,0.00025985204,0.00022565154,0.00017275174,0.000015402331,0.00020977516,0.00017828812,0.0003092919],"category_scores_gemma":[0.00002897418,0.00021355455,0.0001167115,0.000346782,0.0001302154,0.00012292294,0.000007993765,0.00034940135,0.000055357144],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0000618848,0.00025616272,0.00075870083,0.00028841157,0.0005568169,0.0000960747,0.0033714937,0.26128897,0.7036236,0.004527653,0.0056763734,0.019493872],"study_design_scores_gemma":[0.004442995,0.0014415774,0.07314927,0.00050232257,0.00048839475,0.00087060896,0.0025599021,0.018961437,0.81929684,0.0055372505,0.0693953,0.003354113],"about_ca_topic_score_codex":0.000016281334,"about_ca_topic_score_gemma":0.0000282852,"teacher_disagreement_score":0.29712412,"about_ca_system_score_codex":0.00005880075,"about_ca_system_score_gemma":0.000020995752,"threshold_uncertainty_score":0.87085015},"labels":[],"label_agreement":null},{"id":"W2061268494","doi":"10.1117/12.810028","title":"Hybrid wafer-level vacuum hermetic micropackaging technology for MOEMS-MEMS","year":2009,"lang":"en","type":"article","venue":"Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":7,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Institut National d'Optique","funders":"","keywords":"Microelectromechanical systems; Wafer; Materials science; Torr; Optoelectronics; Microfabrication; Wafer-level packaging; Fabrication","score_opus":0.012001765854381983,"score_gpt":0.21971145541982126,"score_spread":0.20770968956543928,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2061268494","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9916708,0.0004337367,0.0008599564,0.0037670028,0.00033052306,0.00074491836,0.000092625,0.0007325218,0.0013679304],"genre_scores_gemma":[0.8578673,0.00022092879,0.14103119,0.000087163506,0.00028622014,0.00021487269,0.00001056159,0.00009487302,0.0001868985],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9977481,5.589251e-9,0.00073546474,0.00042456455,0.0004236161,0.00066829904],"domain_scores_gemma":[0.99844825,0.00010236426,0.00021243008,0.000102421196,0.0010380183,0.00009653739],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.00037610362,0.00045004886,0.0005653557,0.00027516446,0.00010303426,0.000099383695,0.0013069457,0.0003154848,0.0000064524343],"category_scores_gemma":[0.0004161686,0.0004001302,0.00061724737,0.00043236473,0.00024822948,0.00041608256,0.00012937012,0.00045597405,0.0000026996445],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000033264823,0.00007127696,0.00009358804,0.00043774757,0.00032823617,1.7679665e-7,0.00006205779,0.00023617118,0.7031558,0.28679833,0.0055528544,0.0032304653],"study_design_scores_gemma":[0.0015086007,0.00050985994,0.00056441396,0.0004378765,0.00020569748,0.000058010693,0.0011244311,0.048957538,0.91225547,0.026067942,0.0075721713,0.00073798065],"about_ca_topic_score_codex":0.0000017598653,"about_ca_topic_score_gemma":5.260083e-8,"teacher_disagreement_score":0.2607304,"about_ca_system_score_codex":0.00021216249,"about_ca_system_score_gemma":0.000023222492,"threshold_uncertainty_score":0.999845},"labels":[],"label_agreement":null},{"id":"W2063069455","doi":"10.1016/j.microrel.2003.08.013","title":"Extraction of bonding strain data in diode lasers from polarization-resolved photoluminescence measurements","year":2003,"lang":"en","type":"article","venue":"Microelectronics Reliability","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":12,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McMaster University","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Materials science; Soldering; Photoluminescence; Optoelectronics; Laser; Diode; Finite element method; Silicon; Polarization (electrochemistry); Semiconductor laser theory; Composite material; Optics; Structural engineering; Chemistry; Physics; Engineering","score_opus":0.029135757131637893,"score_gpt":0.2570071989924409,"score_spread":0.227871441860803,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2063069455","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9848298,0.00095698464,0.013190266,0.000027798267,0.0001145487,0.0002237579,0.00012476722,0.00018271586,0.00034936692],"genre_scores_gemma":[0.99567544,0.00008095108,0.0040511326,0.000005206733,0.000005449324,0.000007735728,0.00013902408,0.000018833787,0.000016193178],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99877554,0.000051901574,0.00035447758,0.00032501214,0.00016923796,0.00032381038],"domain_scores_gemma":[0.99900013,0.00006972291,0.00005797154,0.0008026175,0.000042023832,0.000027533764],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00051621697,0.00014786633,0.00020783792,0.00008417113,0.000032763193,0.000015784093,0.00036433048,0.00014359094,0.000031863834],"category_scores_gemma":[0.0004559039,0.0001643066,0.000030128322,0.00034900216,0.0000579128,0.0002378759,0.000042994372,0.00030950594,0.0000037933034],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000010281668,0.00008445074,0.063849516,0.000050674513,0.000024126652,8.7306563e-7,0.00006117912,0.0014856218,0.9329832,0.00018586915,0.00010752938,0.0011566824],"study_design_scores_gemma":[0.0007927025,0.000045798457,0.022221738,0.00007101983,0.000033962304,0.0000024495214,0.00019732854,0.0162988,0.95351475,0.0022884808,0.0041576778,0.0003752784],"about_ca_topic_score_codex":0.0003128504,"about_ca_topic_score_gemma":0.00046235518,"teacher_disagreement_score":0.04162778,"about_ca_system_score_codex":0.00031323577,"about_ca_system_score_gemma":0.00007804186,"threshold_uncertainty_score":0.6700229},"labels":[],"label_agreement":null},{"id":"W2063787241","doi":"10.1149/1.3272957","title":"Interfacial Behavior of Surface Activated p-GaP/n-GaAs Bonded Wafers at Room Temperature","year":2010,"lang":"en","type":"article","venue":"Electrochemical and Solid-State Letters","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":28,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McMaster University","funders":"McMaster University","keywords":"Materials science; Annealing (glass); Amorphous solid; Wafer; Composite material; Optoelectronics; Crystallography; Chemistry","score_opus":0.004183097193783306,"score_gpt":0.2028024206934443,"score_spread":0.198619323499661,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2063787241","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9983725,0.00007137622,0.00007790237,0.00066592905,0.00014268603,0.00013712702,0.000013825013,0.0003986742,0.00011999048],"genre_scores_gemma":[0.9992232,0.000049319442,0.000351082,0.00017126156,0.000035920642,0.0000122391,0.000026105794,0.0000335885,0.00009728553],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.998966,0.000008632958,0.00022456238,0.00023789135,0.00013431464,0.00042861106],"domain_scores_gemma":[0.99962056,0.00003521693,0.000037112703,0.00019984803,0.000024117362,0.0000831426],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00004153017,0.00024075824,0.00028266388,0.000054602613,0.00005740296,0.000023702272,0.00018695807,0.00022937296,0.000039908555],"category_scores_gemma":[0.000021327845,0.0002154624,0.000066945446,0.00015405533,0.00015401715,0.00009093509,0.00007306863,0.0007566799,0.000006891415],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000043720058,0.00001971489,0.00084478024,0.000027976706,0.000041116753,0.000010227204,0.00015521602,0.000021278363,0.99623877,0.000020441668,0.002268145,0.00030860907],"study_design_scores_gemma":[0.00034520353,0.000037329024,0.0004906525,0.000011094222,0.000020435604,0.000023303905,0.000021376247,0.00012346216,0.9979564,0.00009178432,0.0006305971,0.00024838524],"about_ca_topic_score_codex":0.0000081181815,"about_ca_topic_score_gemma":0.000014013022,"teacher_disagreement_score":0.0017176023,"about_ca_system_score_codex":0.000047299043,"about_ca_system_score_gemma":0.000007898538,"threshold_uncertainty_score":0.87863016},"labels":[],"label_agreement":null},{"id":"W2070520022","doi":"10.1002/mop.20404","title":"High‐performance bulk and thin‐film microstrip transmission lines on VLSI‐standard Si substrates","year":2004,"lang":"en","type":"article","venue":"Microwave and Optical Technology Letters","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":5,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"National Research Council Canada","funders":"","keywords":"Materials science; Very-large-scale integration; Microstrip; Optoelectronics; Electronic engineering; Thin film; Electrical engineering; Engineering; Nanotechnology","score_opus":0.005293206214535037,"score_gpt":0.18566545724645783,"score_spread":0.18037225103192278,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2070520022","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9827698,0.0012589713,0.005398485,0.0091352165,0.0000897056,0.00014474038,0.000007595987,0.0010353498,0.0001601275],"genre_scores_gemma":[0.9857782,0.0019170294,0.011791898,0.0004269922,0.000028569762,0.000011907073,0.0000064597207,0.000029712293,0.000009235725],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9989766,0.0000036928548,0.00021915385,0.00031087245,0.0000861528,0.0004035388],"domain_scores_gemma":[0.9996621,0.000031184674,0.00002072177,0.00020936815,0.000017733284,0.00005888273],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00006345713,0.0002699694,0.00028769564,0.0002445118,0.00011958833,0.000040956795,0.00016161543,0.00044252322,0.0000039244196],"category_scores_gemma":[0.000015987021,0.00022853121,0.000032204272,0.00023718887,0.00059096335,0.00010889059,0.00004971522,0.0005369632,0.000015210686],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000043365137,0.000020691647,0.00065071037,0.00008789038,0.000041319207,0.000057535395,0.000057260255,0.0012634653,0.95270526,0.0046907016,0.00019861739,0.040183198],"study_design_scores_gemma":[0.0008944618,0.0002534218,0.000941958,0.00013121682,0.000023227638,0.00009522329,0.00007674207,0.00034524754,0.99327314,0.0022484798,0.0014143187,0.0003025482],"about_ca_topic_score_codex":0.0000024652288,"about_ca_topic_score_gemma":0.0000018211157,"teacher_disagreement_score":0.04056791,"about_ca_system_score_codex":0.00004138877,"about_ca_system_score_gemma":0.000008129165,"threshold_uncertainty_score":0.9319232},"labels":[],"label_agreement":null},{"id":"W2072023779","doi":"10.1007/s12540-011-0817-5","title":"New process of electroplate Sn bumping on TSV without a PR mould for 3D-chip stacking","year":2011,"lang":"en","type":"article","venue":"Metals and Materials International","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Bumping; Electroplating; Materials science; Plating (geology); Anode; Metallurgy; Stacking; Current density; Composite material; Deposition (geology); Alloy; Photoresist; Electrode; Layer (electronics); Mechanical engineering; Nuclear magnetic resonance","score_opus":0.028510475144696262,"score_gpt":0.25785730789045286,"score_spread":0.2293468327457566,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2072023779","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9440193,0.00014502257,0.050955836,0.000041248022,0.0005850826,0.00021024545,0.000050523773,0.00018673058,0.0038060157],"genre_scores_gemma":[0.98131686,0.00007750317,0.01831254,0.000024848881,0.000076010445,0.00002970195,0.00001050731,0.000018682485,0.00013336362],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99945974,0.000005310442,0.00020217948,0.00011316861,0.000095398485,0.00012419686],"domain_scores_gemma":[0.999786,0.000018008883,0.000060527706,0.00007104211,0.00004500376,0.000019385447],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000119192475,0.00010368843,0.0001745972,0.00008097664,0.00001960728,0.0000271507,0.000121956145,0.000058366077,0.000104901395],"category_scores_gemma":[0.000055388024,0.00008742742,0.000023190765,0.000027288474,0.000018429268,0.000101935155,0.000023885186,0.00003743243,0.0000026461641],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0005919242,0.000088926274,0.00035180972,0.0005619337,0.0008959522,0.0000068212416,0.0017223608,0.00036376543,0.8345375,0.12718017,0.00056085445,0.033137977],"study_design_scores_gemma":[0.00039075915,0.00010013415,0.00034078024,0.00008218221,0.000027279402,0.000007941282,0.000057114896,0.00065505237,0.98746955,0.0090526715,0.0016900193,0.00012650902],"about_ca_topic_score_codex":0.00002001541,"about_ca_topic_score_gemma":0.000002035447,"teacher_disagreement_score":0.15293205,"about_ca_system_score_codex":0.000012028809,"about_ca_system_score_gemma":0.00000972926,"threshold_uncertainty_score":0.35651866},"labels":[],"label_agreement":null},{"id":"W2073533773","doi":"10.1109/lascas.2014.6820298","title":"Cavity formation in bonded silicon wafers using partially cured dry etch bisbenzocyclobutene (BCB)","year":2014,"lang":"en","type":"article","venue":"","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":3,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Windsor; Western University","funders":"CMC Microsystems","keywords":"Materials science; Wafer; Silicon on insulator; Wafer bonding; Microelectronics; Optoelectronics; Microelectromechanical systems; Silicon; Capacitive micromachined ultrasonic transducers; Capacitive sensing; Ultrasonic sensor; Dry etching; Etching (microfabrication); Composite material; Layer (electronics); Electrical engineering; Piezoelectricity; Acoustics","score_opus":0.0158019698242521,"score_gpt":0.21897481471234156,"score_spread":0.20317284488808945,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2073533773","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9434419,0.000051433402,0.051076,0.000109304056,0.0001529125,0.00012457125,0.0000014991309,0.00091079075,0.0041315462],"genre_scores_gemma":[0.99682814,0.000025657648,0.0030246966,0.00003678345,0.000024977666,0.000009118725,0.000006919662,0.00001591018,0.000027800595],"study_design_codex":"bench_or_experimental","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99926656,0.000017059174,0.0002302303,0.000118314325,0.000101648664,0.00026620686],"domain_scores_gemma":[0.9996849,0.000026637335,0.000025036938,0.00021359956,0.000017049651,0.000032819207],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00013797611,0.0001332061,0.00016942713,0.00012819846,0.000034485987,0.000025458061,0.000121645804,0.00015688482,0.000023744908],"category_scores_gemma":[0.00005003006,0.00012243363,0.000036338475,0.0001963973,0.00002518673,0.0003053772,0.000036813115,0.00015191117,0.000024650159],"study_design_candidate":"simulation_or_modeling","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000047036847,0.00013656785,0.027839852,0.00041648804,0.00008275005,0.000023156097,0.0012114715,0.2757642,0.49798906,0.019534534,0.0025008915,0.17445397],"study_design_scores_gemma":[0.0004798387,0.000023850813,0.007250402,0.000028846176,0.000009027144,0.000003566332,0.00022012666,0.78777486,0.2009123,0.0020453741,0.0010017025,0.00025009576],"about_ca_topic_score_codex":0.00017911926,"about_ca_topic_score_gemma":0.00051725795,"teacher_disagreement_score":0.5120107,"about_ca_system_score_codex":0.00009908971,"about_ca_system_score_gemma":0.000007026822,"threshold_uncertainty_score":0.49926984},"labels":[],"label_agreement":null},{"id":"W2073553220","doi":"10.1016/j.talanta.2010.05.001","title":"Hybrid plasma bonding for void-free strong bonded interface of silicon/glass at 200°C","year":2010,"lang":"en","type":"article","venue":"Talanta","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":42,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McMaster University","funders":"Natural Sciences and Engineering Research Council of Canada; McMaster University","keywords":"Anodic bonding; Void (composites); Silicon; Plasma activation; Chemistry; Anode; Amorphous silicon; Amorphous solid; Reactive-ion etching; Plasma; Chemical engineering; Etching (microfabrication); Composite material; Layer (electronics); Crystalline silicon; Materials science; Crystallography; Physical chemistry; Electrode; Organic chemistry","score_opus":0.01051066360440148,"score_gpt":0.232595561959583,"score_spread":0.22208489835518153,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2073553220","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9934761,0.00009834825,0.0008335038,0.000080958715,0.00047997726,0.00018237227,0.00013517261,0.0005300439,0.004183511],"genre_scores_gemma":[0.9979836,0.000010810713,0.0006546486,0.0000034580821,0.00004731329,0.000021508842,0.0000140640905,0.000033316956,0.0012312903],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9992945,0.0000026334205,0.0001932326,0.0001474796,0.00008636703,0.00027576354],"domain_scores_gemma":[0.99938595,0.00007881655,0.000043353477,0.000435084,0.000018876919,0.000037940496],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00007034334,0.00014545422,0.00020332694,0.00007893911,0.000040366413,0.000012924222,0.00036590736,0.00009880067,0.00006826794],"category_scores_gemma":[0.000086644,0.00013976285,0.00006373692,0.00005134375,0.000072970965,0.00008571341,0.00016746082,0.00020183618,0.000028906321],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000044623666,0.000027732287,0.0029082878,0.0002065497,0.00009287442,0.0000068686495,0.00014724856,0.0005400363,0.9320192,0.005437362,0.0546662,0.0039030479],"study_design_scores_gemma":[0.0007169315,0.000054526354,0.00036394192,0.00002934227,0.000020240148,0.0000317778,0.00016467221,0.015923109,0.9652214,0.0007454574,0.016532376,0.00019621028],"about_ca_topic_score_codex":0.000012724546,"about_ca_topic_score_gemma":0.000115962015,"teacher_disagreement_score":0.03813382,"about_ca_system_score_codex":0.000034702058,"about_ca_system_score_gemma":0.000007822905,"threshold_uncertainty_score":0.5699364},"labels":[],"label_agreement":null},{"id":"W2074317550","doi":"10.1088/0960-1317/20/6/065012","title":"Void nucleation at a sequentially plasma-activated silicon/silicon bonded interface","year":2010,"lang":"en","type":"article","venue":"Journal of Micromechanics and Microengineering","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":28,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McMaster University","funders":"Natural Sciences and Engineering Research Council of Canada; McMaster University","keywords":"Nucleation; Materials science; Void (composites); Silicon; Reactive-ion etching; Wafer; Scanning electron microscope; Plasma etching; Annealing (glass); Transmission electron microscopy; Composite material; Plasma; Plasma activation; Analytical Chemistry (journal); Etching (microfabrication); Chemistry; Nanotechnology; Metallurgy; Layer (electronics)","score_opus":0.004634746040105577,"score_gpt":0.186123070192699,"score_spread":0.18148832415259342,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2074317550","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99162847,0.000712099,0.006261822,0.0000941015,0.00095448474,0.000087142405,0.000008277162,0.00020225316,0.000051354138],"genre_scores_gemma":[0.996315,0.00050275674,0.002985249,0.000010312733,0.00007138568,0.0000016961947,0.0000019264273,0.000053916137,0.000057757257],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9990863,0.000006008379,0.0004061741,0.00012892511,0.00010154532,0.00027105366],"domain_scores_gemma":[0.9995158,0.00002969102,0.00012194844,0.000160278,0.00007727414,0.00009502593],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0001614805,0.00022193188,0.00029614088,0.0002483423,0.00005593582,0.000060187922,0.00020178809,0.00019846491,0.000040197723],"category_scores_gemma":[0.000040931962,0.00021486318,0.000090076006,0.00013574256,0.000024227873,0.00021233362,0.000090233116,0.0006001991,0.000008424298],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000018213248,0.000012466883,0.000007706796,0.00005721582,0.000081366336,0.000016799067,0.00014847577,0.0012347868,0.9926478,0.00020406069,0.00038280323,0.0051883035],"study_design_scores_gemma":[0.00056926854,0.00008295855,0.000043504177,0.000075777556,0.000032301876,0.00079970347,0.000115695155,0.014982212,0.9743319,0.00010818481,0.008649043,0.00020944551],"about_ca_topic_score_codex":0.000002546169,"about_ca_topic_score_gemma":0.000011977164,"teacher_disagreement_score":0.018315896,"about_ca_system_score_codex":0.00009123037,"about_ca_system_score_gemma":0.000016742893,"threshold_uncertainty_score":0.8761866},"labels":[],"label_agreement":null},{"id":"W2076384338","doi":"10.1109/icecs.2010.5724516","title":"Thermo-mechanical analysis of a reconfigurable wafer-scale integrated circuit","year":2010,"lang":"en","type":"article","venue":"","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Polytechnique Montréal; Université du Québec à Montréal; Université du Québec à Trois-Rivières; Université du Québec en Outaouais","funders":"Natural Sciences and Engineering Research Council of Canada; CMC Microsystems","keywords":"Wafer; Finite element method; Thermal; Fabrication; Integrated circuit; Rapid prototyping; Materials science; Mechanical engineering; Wafer-scale integration; Computer science; Electronic engineering; Engineering; Structural engineering; Nanotechnology; Optoelectronics","score_opus":0.009803105378562927,"score_gpt":0.19699008763893675,"score_spread":0.1871869822603738,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2076384338","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.86128294,0.00002706003,0.012757803,0.000039993978,0.00015498078,0.000058663154,0.000011105203,0.0008683646,0.12479909],"genre_scores_gemma":[0.9985362,0.0000251176,0.0008663223,0.000010373629,0.000007403948,0.000007788919,0.000008691795,0.000011887174,0.00052618334],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9994741,0.00000466421,0.00018458307,0.00011257196,0.00007131154,0.00015276273],"domain_scores_gemma":[0.9995563,0.00003591027,0.000018504394,0.00032190638,0.00003645352,0.00003090601],"candidate_categories":["insufficient_payload"],"consensus_categories":[],"category_scores_codex":[0.000089898924,0.00009403992,0.0002446381,0.00020485287,0.000014914199,0.00000985472,0.00019566911,0.00016895747,0.0026086678],"category_scores_gemma":[0.000031177966,0.00007243593,0.00010831157,0.0007247063,0.00003863682,0.00005750814,0.000011506742,0.00025200262,0.000037846014],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000004640173,0.000051607083,0.001756811,0.000021002366,0.0011369458,0.0000028222262,0.00011840078,0.0007049465,0.89734316,0.036222443,0.0011145977,0.061522614],"study_design_scores_gemma":[0.00025619243,0.000051375406,0.006079036,0.000010804526,0.00047659222,0.0000040564555,0.0005906349,0.121514924,0.8608357,0.004227828,0.0056074774,0.00034537996],"about_ca_topic_score_codex":0.00008120377,"about_ca_topic_score_gemma":0.0004225502,"teacher_disagreement_score":0.13725328,"about_ca_system_score_codex":0.000010618442,"about_ca_system_score_gemma":0.000008178273,"threshold_uncertainty_score":0.99830306},"labels":[],"label_agreement":null},{"id":"W2081168945","doi":"10.5194/ars-3-305-2005","title":"Eine Test- und Ansteuerschaltung für eine neuartige 3D Verbindungstechnologie","year":2005,"lang":"de","type":"article","venue":"Advances in radio science","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":5,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Infineon Technologies (Canada)","funders":"","keywords":"Physics","score_opus":0.008366546444426469,"score_gpt":0.2831560344524803,"score_spread":0.2747894880080538,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2081168945","genre_codex":"review","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.23398112,0.7250005,0.00946778,0.00454104,0.004851135,0.0010575613,0.00004404216,0.0034388425,0.017617952],"genre_scores_gemma":[0.9377149,0.032805033,0.028812937,0.00008973054,0.00027767068,0.000043282493,0.000002506334,0.000044264245,0.00020967903],"study_design_codex":"design_other","study_design_gemma":"not_applicable","domain_scores_codex":[0.9959806,0.000018374152,0.00069631403,0.0010296636,0.0007148984,0.0015601383],"domain_scores_gemma":[0.99808794,0.00031480586,0.00016140987,0.0011682692,0.0000897803,0.00017779625],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.00073093676,0.00052763644,0.00054514327,0.0008530663,0.0003245875,0.00014593337,0.0021744778,0.00035123035,0.00006027601],"category_scores_gemma":[0.0014064615,0.000518699,0.000078868026,0.0039979825,0.0025371339,0.002959277,0.00041037283,0.0009970132,0.0004428143],"study_design_candidate":"design_other","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000018665814,0.00026297476,0.015332696,0.00021095166,0.0000485831,0.00022445708,0.00049239217,0.13625138,0.019867793,0.012382872,0.00032383588,0.8145834],"study_design_scores_gemma":[0.0027059778,0.0011163815,0.0066107423,0.0012104069,0.00020947529,0.000087592605,0.0011340737,0.30599275,0.16735849,0.0064333575,0.50433016,0.0028106004],"about_ca_topic_score_codex":0.000018682522,"about_ca_topic_score_gemma":0.000103914004,"teacher_disagreement_score":0.8117728,"about_ca_system_score_codex":0.00078677374,"about_ca_system_score_gemma":0.00019751256,"threshold_uncertainty_score":0.9997265},"labels":[],"label_agreement":null},{"id":"W2081646139","doi":"10.4313/jkem.2014.27.3.137","title":"Characterization of Backside Passivation Process for Through Silicon via Wafer","year":2014,"lang":"en","type":"article","venue":"Journal of the Korean Institute of Electrical and Electronic Material Engineers","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Toronto","funders":"","keywords":"Wafer; Materials science; Passivation; Plasma-enhanced chemical vapor deposition; Interconnection; Stress (linguistics); Silicon nitride; Silicon; Optoelectronics; Deposition (geology); Wafer bonding; Electronic engineering; Composite material; Layer (electronics); Engineering","score_opus":0.005184291307010544,"score_gpt":0.19464051106497315,"score_spread":0.18945621975796262,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2081646139","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9355819,0.00007041914,0.063520476,0.00015375506,0.00042034622,0.00013570896,0.0000049857786,0.000030743293,0.00008162967],"genre_scores_gemma":[0.99945444,0.00017671585,0.00018534229,0.000012413196,0.00013493371,0.00000487155,0.000006118433,0.00001382749,0.00001133295],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99920887,0.000009709561,0.00038704302,0.00006450948,0.00012289244,0.00020699168],"domain_scores_gemma":[0.9995811,0.000022871282,0.00019145689,0.00009128128,0.00009112426,0.000022144628],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00013905743,0.00011620788,0.00027235114,0.00008006238,0.000029227298,0.000009339091,0.00017404502,0.00009661877,0.000004145285],"category_scores_gemma":[0.000088759436,0.000078739424,0.00007466994,0.00018854038,0.000055081673,0.0002157419,0.000011070305,0.00013707454,1.1300164e-7],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00014861333,0.00003218974,0.000047868052,0.00026852064,0.000109542496,1.8865022e-7,0.00009263316,0.006518751,0.9683896,0.017230425,0.00008683484,0.007074866],"study_design_scores_gemma":[0.0005778792,0.00041152156,0.000535633,0.00006432324,0.00006549388,0.000026097201,0.0000058903183,0.0130127035,0.97497874,0.00759856,0.0026058552,0.00011732514],"about_ca_topic_score_codex":0.000003906007,"about_ca_topic_score_gemma":0.0000011372312,"teacher_disagreement_score":0.06387251,"about_ca_system_score_codex":0.000051638755,"about_ca_system_score_gemma":0.000041168772,"threshold_uncertainty_score":0.32109007},"labels":[],"label_agreement":null},{"id":"W2085252411","doi":"10.1109/tcad.2012.2237226","title":"Testing 3-D IC Through-Silicon-Vias (TSVs) by Direct Probing","year":2013,"lang":"en","type":"article","venue":"IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":10,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Windsor","funders":"University of Windsor; CMC Microsystems","keywords":"Microelectromechanical systems; Through-silicon via; Integrated circuit; Electronic engineering; Materials science; Silicon; Degradation (telecommunications); Electrical engineering; Optoelectronics; Engineering","score_opus":0.03297861699556322,"score_gpt":0.2059654751768624,"score_spread":0.17298685818129916,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2085252411","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.053208623,0.0008926442,0.942008,0.000012380142,0.0008280729,0.0007987511,0.000033064687,0.0011653111,0.0010531638],"genre_scores_gemma":[0.9974617,0.00010912559,0.0020267167,0.000017081406,0.000033339657,0.00017938248,0.0000036254335,0.000054699667,0.00011433372],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9984056,0.000094250536,0.000591849,0.00034886887,0.00018988877,0.0003695788],"domain_scores_gemma":[0.9989217,0.00039397832,0.000103736245,0.0003212254,0.00018046837,0.000078906225],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.0001646842,0.00036050953,0.0005356733,0.000202425,0.00014837044,0.00014971771,0.00023506577,0.00024504017,0.000020671794],"category_scores_gemma":[0.000010618851,0.000303332,0.0000743788,0.00050770905,0.000098689,0.00032460634,0.0000017358627,0.00038158224,0.000030991072],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00000815411,0.0002163106,0.00006170732,0.00064783375,0.0005477985,0.00001231984,0.00094506383,0.42087114,0.32986325,0.00018707835,0.009968026,0.23667131],"study_design_scores_gemma":[0.0006758455,0.0006052986,0.000046435885,0.0010842995,0.000061563835,0.00009752386,0.0006653361,0.85635066,0.13921344,0.00016127774,0.00039962883,0.0006387084],"about_ca_topic_score_codex":0.0005663944,"about_ca_topic_score_gemma":0.0000020788998,"teacher_disagreement_score":0.9442531,"about_ca_system_score_codex":0.00009178862,"about_ca_system_score_gemma":0.00003530275,"threshold_uncertainty_score":0.9999419},"labels":[],"label_agreement":null},{"id":"W2096793145","doi":"10.1109/newcas.2011.5981254","title":"Power supply analysis of a large area integrated circuit","year":2011,"lang":"en","type":"article","venue":"","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Université du Québec à Montréal; Polytechnique Montréal","funders":"CMC Microsystems","keywords":"Power (physics); Sizing; Finite element method; CMOS; Wafer; Computer science; Integrated circuit; Electronic engineering; Power density; Electrical engineering; Engineering","score_opus":0.018554873718507132,"score_gpt":0.1972755836848123,"score_spread":0.17872070996630515,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2096793145","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.7368339,0.00011033753,0.04158016,0.0000057538227,0.00004994617,0.000042785723,0.000031756557,0.00086074235,0.22048467],"genre_scores_gemma":[0.9991167,0.000021983979,0.0005615711,0.000010165406,8.9137893e-7,0.0000037346454,0.000009371998,0.0000073981605,0.00026814712],"study_design_codex":"observational","study_design_gemma":"observational","domain_scores_codex":[0.9996257,0.0000026092068,0.00012140641,0.0000697638,0.000049982573,0.00013053483],"domain_scores_gemma":[0.99973065,0.000009055563,0.0000122169995,0.00020418408,0.000026587728,0.000017289361],"candidate_categories":["insufficient_payload"],"consensus_categories":[],"category_scores_codex":[0.000040884348,0.00007063273,0.00016860623,0.00026284845,0.0000074263826,0.0000028244347,0.00012062399,0.00007067077,0.0045792954],"category_scores_gemma":[0.000014729149,0.000054646018,0.00007802037,0.0006926028,0.000020444544,0.000051323503,0.00001809541,0.00006571233,0.00002584199],"study_design_candidate":"observational","study_design_consensus":"observational","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000026144136,0.0005184268,0.60587806,0.00009065681,0.013266171,0.00006531907,0.007570105,0.0009613698,0.019270992,0.31808972,0.022343552,0.011919453],"study_design_scores_gemma":[0.0010616482,0.00024166417,0.63138306,0.00005322019,0.0017542031,0.000005731678,0.010188858,0.075236656,0.25816828,0.005754389,0.014986623,0.0011656336],"about_ca_topic_score_codex":0.000049458406,"about_ca_topic_score_gemma":0.00006698393,"teacher_disagreement_score":0.31233534,"about_ca_system_score_codex":0.000011215174,"about_ca_system_score_gemma":0.000003655449,"threshold_uncertainty_score":0.9963307},"labels":[],"label_agreement":null},{"id":"W2099565334","doi":"10.1109/esime.2010.5464589","title":"GaAs-based laser diode bonding-induced stress investigation by means of simulation and Degree of Polarization of photoluminescence measurements","year":2010,"lang":"en","type":"article","venue":"","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":2,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McMaster University","funders":"Agence Nationale de la Recherche","keywords":"Materials science; Photoluminescence; Laser; Polarization (electrochemistry); Residual stress; Diode; Degree of polarization; Stress (linguistics); Laser diode; Optoelectronics; Semiconductor laser theory; Degree (music); Optics; Composite material; Acoustics; Physics; Chemistry; Scattering","score_opus":0.03974016887829546,"score_gpt":0.2398364190695829,"score_spread":0.20009625019128743,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2099565334","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.98304445,0.000014780472,0.016455404,0.00001643106,0.00004071134,0.00012439095,0.000014385861,0.00008622955,0.00020320044],"genre_scores_gemma":[0.9979129,0.0000010561089,0.002033737,0.0000036349081,0.000003020702,0.0000027964932,0.000020811796,0.0000092926,0.00001279627],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99945664,0.0000074708346,0.00022220412,0.00008062232,0.00016143646,0.00007162129],"domain_scores_gemma":[0.999615,0.000034064422,0.00008855821,0.00013877187,0.00010310675,0.000020471187],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00008599277,0.00007779505,0.00012646413,0.00009302424,0.000013156773,0.0000037971404,0.00006970858,0.00010547917,0.00000942797],"category_scores_gemma":[0.00011542282,0.000074450036,0.00001600717,0.00016191324,0.000063215724,0.00011439237,0.000010092486,0.000067153065,1.9295724e-7],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000003699896,0.0000148876925,0.12509902,0.00011209497,0.000010182645,2.73853e-8,0.00004297708,0.0057198494,0.868354,0.000082213075,0.000015130926,0.0005458728],"study_design_scores_gemma":[0.00023664015,0.000026246766,0.013524193,0.000039029397,0.000012736478,5.5408265e-8,0.000028257422,0.13784702,0.8481771,0.00004929077,0.0000031537072,0.000056300727],"about_ca_topic_score_codex":0.00009095781,"about_ca_topic_score_gemma":0.00011049914,"teacher_disagreement_score":0.13212718,"about_ca_system_score_codex":0.000008329445,"about_ca_system_score_gemma":0.000010733108,"threshold_uncertainty_score":0.30359843},"labels":[],"label_agreement":null},{"id":"W2100272413","doi":"10.1109/mwsym.2012.6259646","title":"Microwave susceptor design for wafer bonding applications","year":2012,"lang":"en","type":"article","venue":"","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":4,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Alberta","funders":"Natural Sciences and Engineering Research Council of Canada; CMC Microsystems","keywords":"Susceptor; Microwave; Microwave oven; Wafer; Materials science; Microwave heating; Optoelectronics; Computer science; Process engineering; Nanotechnology; Telecommunications; Engineering; Layer (electronics)","score_opus":0.029375794276243088,"score_gpt":0.23401750177169456,"score_spread":0.20464170749545146,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2100272413","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"methods","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.0022437226,0.00040511435,0.98600197,0.000049308273,0.000083374005,0.00030287233,0.0000022717122,0.0008974152,0.010013943],"genre_scores_gemma":[0.8698371,0.000009072883,0.12834278,0.000016412054,0.00007715726,0.00029916133,0.0000032942144,0.000015822567,0.0013991845],"study_design_codex":"theoretical_or_conceptual","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9996625,0.0000014665803,0.00006500237,0.000048171798,0.000023298,0.00019953353],"domain_scores_gemma":[0.9998003,0.000047187765,0.000005571343,0.000110758316,0.00000934199,0.000026836688],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000055797227,0.000059516955,0.00005522577,0.000036634636,0.00003552492,0.000008511578,0.000071286326,0.000056999746,0.000055533365],"category_scores_gemma":[0.000007383635,0.000052191805,0.00002490634,0.00006123478,0.000013315527,0.00007511222,0.000011830291,0.00003735003,0.000109508306],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0000044731914,0.000051243533,0.0012058582,0.00010844994,0.000084088024,1.1889429e-7,0.00024388339,0.0004766609,0.2418154,0.43445256,0.24866189,0.07289536],"study_design_scores_gemma":[0.00016029988,0.0000138145615,0.00017503173,0.0000040799473,0.000016187216,0.0000024965204,0.0002905544,0.0021846467,0.63618696,0.004201523,0.35655698,0.00020744093],"about_ca_topic_score_codex":5.450762e-7,"about_ca_topic_score_gemma":4.9222024e-7,"teacher_disagreement_score":0.8675934,"about_ca_system_score_codex":0.000025502199,"about_ca_system_score_gemma":0.0000023441287,"threshold_uncertainty_score":0.212832},"labels":[],"label_agreement":null},{"id":"W2100424833","doi":"10.1109/cicc.2008.4672055","title":"MEMS wafer-level vacuum packaging with transverse interconnects for CMOS integration","year":2008,"lang":"en","type":"article","venue":"","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":6,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McGill University","funders":"McGill University","keywords":"Microelectromechanical systems; Wafer; Materials science; Silicon carbide; Wafer-scale integration; Optoelectronics; Vacuum level; Electronics; Wafer-level packaging; CMOS; Electronic engineering; Electrical engineering; Engineering physics; Engineering; Composite material","score_opus":0.04078050352260687,"score_gpt":0.20188639415267298,"score_spread":0.1611058906300661,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2100424833","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.34780753,0.00003614841,0.6463847,0.0001676791,0.00010379873,0.00018560486,0.0000062081062,0.0010165401,0.004291771],"genre_scores_gemma":[0.98517406,0.00005135324,0.0140573755,0.000030942585,0.000023852406,0.000052828535,0.00000918924,0.000024712572,0.0005756732],"study_design_codex":"design_other","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9995328,0.0000020591474,0.00010726598,0.00011589296,0.00006185641,0.00018009622],"domain_scores_gemma":[0.99976146,0.00003441947,0.0000095953155,0.0001403625,0.000028574887,0.000025577197],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000032809934,0.00012483966,0.0001218887,0.000074238254,0.00005451077,0.000011046592,0.0000975687,0.00007041762,0.000038527684],"category_scores_gemma":[0.0000116002275,0.000090370435,0.000038635,0.000100065,0.000036743248,0.00017085217,0.0000067889096,0.000097522876,0.000015955637],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00043478815,0.00033985847,0.004940162,0.0008900413,0.0012124437,0.00019647137,0.022414196,0.011128387,0.32806277,0.10012626,0.09223834,0.43801627],"study_design_scores_gemma":[0.0019399044,0.00035408663,0.001335533,0.00012569595,0.0000468545,0.00010300173,0.0051104426,0.05934818,0.92283654,0.002053081,0.00605114,0.0006955402],"about_ca_topic_score_codex":0.000016042097,"about_ca_topic_score_gemma":0.0001101371,"teacher_disagreement_score":0.63736653,"about_ca_system_score_codex":0.000035718498,"about_ca_system_score_gemma":0.000009405856,"threshold_uncertainty_score":0.36851993},"labels":[],"label_agreement":null},{"id":"W2101296378","doi":"10.1109/vts.2011.5783764","title":"Special session 4A: New topics parametric yield and reliability of 3D integrated circuits: New challenges and solutions","year":2011,"lang":"en","type":"article","venue":"","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Integrated circuit; Computer science; Parametric statistics; Session (web analytics); Planar; Electronic circuit; Bandwidth (computing); Reliability (semiconductor); Integrated circuit design; Electronic engineering; Computer architecture; Engineering; Telecommunications; Electrical engineering; Embedded system; Mathematics","score_opus":0.07147562431883374,"score_gpt":0.2247058361804824,"score_spread":0.15323021186164865,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2101296378","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.786274,0.015597676,0.031816714,0.00090803404,0.0009899242,0.00041626603,0.000007596336,0.001392083,0.16259772],"genre_scores_gemma":[0.9869553,0.006862488,0.005536222,0.0000061433843,0.00017285738,0.0000017021157,7.583662e-7,0.000008001943,0.00045655214],"study_design_codex":"design_other","study_design_gemma":"observational","domain_scores_codex":[0.9995434,0.0000048225183,0.0001445342,0.00012585292,0.000051836058,0.00012954354],"domain_scores_gemma":[0.9996893,0.000050698596,0.00001802309,0.0001666349,0.000020164169,0.000055227687],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000057090063,0.00009185123,0.00015004088,0.00009711375,0.00002246952,0.0000056891436,0.0000679354,0.0001478456,0.00012225879],"category_scores_gemma":[0.0002071016,0.00007262903,0.000015575097,0.0001555492,0.00005681257,0.00009361471,0.000053429245,0.00013229238,0.0000025051968],"study_design_candidate":"design_other","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0000039585557,0.000029542325,0.00220985,0.00007323966,0.000018110451,0.0000013116618,0.00083145575,0.000017029568,0.0001384074,0.007413063,0.0068159057,0.9824481],"study_design_scores_gemma":[0.0027312872,0.0012533197,0.70144635,0.00064008194,0.0002560297,0.00005940465,0.013147448,0.0065907445,0.042446505,0.1501546,0.079377905,0.0018963295],"about_ca_topic_score_codex":0.00026825364,"about_ca_topic_score_gemma":0.000115266645,"teacher_disagreement_score":0.9805518,"about_ca_system_score_codex":0.000015434316,"about_ca_system_score_gemma":0.000022041333,"threshold_uncertainty_score":0.2961726},"labels":[],"label_agreement":null},{"id":"W2102027329","doi":"10.1021/am4021236","title":"Electrical Contact at the Interface between Silicon and Transfer-Printed Gold Films by Eutectic Joining","year":2013,"lang":"en","type":"article","venue":"ACS Applied Materials & Interfaces","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":23,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Alberta","funders":"","keywords":"Materials science; Eutectic system; Transfer printing; Electrical contacts; Eutectic bonding; Silicon; Nanometre; Substrate (aquarium); Thermal contact; Semiconductor; Nanotechnology; Thermal; Optoelectronics; Composite material; Alloy","score_opus":0.008700372564203727,"score_gpt":0.2118643244691399,"score_spread":0.20316395190493616,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2102027329","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9959258,0.00079212995,0.0003301177,0.00027561266,0.00016404058,0.0005275473,0.00004228517,0.0007584313,0.0011840763],"genre_scores_gemma":[0.9992448,0.00017665663,0.00004792231,0.000052973737,0.000033550306,0.00018752321,0.000012958317,0.00005507801,0.0001885101],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9987131,0.000027826583,0.00039660733,0.00030914196,0.00012430329,0.00042906092],"domain_scores_gemma":[0.9994247,0.00016337511,0.000040204435,0.00030213315,0.000020172181,0.000049419967],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00015569292,0.00032134558,0.00042216456,0.00005945284,0.00008685953,0.00021903106,0.0003667788,0.00021919819,0.00048261488],"category_scores_gemma":[0.000023275457,0.00022935666,0.000016042364,0.00010461519,0.00011860759,0.00013034242,0.00017819671,0.00025813517,0.00028314887],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000018311577,0.000006602773,0.00006726761,0.00004291602,0.00009997212,3.9585723e-7,0.00026638948,0.00002228376,0.98910964,0.00020094607,0.005615737,0.0045495345],"study_design_scores_gemma":[0.00030948062,0.000090387286,0.000492427,0.000033206405,0.00003765857,0.000006419987,0.00037588167,0.000027582286,0.9975322,0.0002849181,0.0005391991,0.00027064898],"about_ca_topic_score_codex":0.000091314396,"about_ca_topic_score_gemma":0.000009047858,"teacher_disagreement_score":0.008422546,"about_ca_system_score_codex":0.000058442518,"about_ca_system_score_gemma":0.000004794404,"threshold_uncertainty_score":0.9352894},"labels":[],"label_agreement":null},{"id":"W2104499482","doi":"10.1109/isee.2005.1437011","title":"New microprocessor features for lower power and increased performance: doing \"Moore's\" with less","year":2005,"lang":"en","type":"article","venue":"","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":2,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Advanced Micro Devices (Canada)","funders":"","keywords":"Microprocessor; Transistor; Power (physics); Clock rate; Computer science; Efficient energy use; Embedded system; Energy (signal processing); Electrical engineering; Electronic engineering; Engineering; CMOS; Voltage","score_opus":0.00376366986478322,"score_gpt":0.18167460746414613,"score_spread":0.1779109375993629,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2104499482","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9697671,0.0010186959,0.01629734,0.00020694805,0.000048235568,0.00017000189,0.000002750497,0.00074484677,0.011744103],"genre_scores_gemma":[0.95332026,0.0000769511,0.045206167,0.00007407956,0.00004888334,0.000013492318,0.000002087272,0.000023595849,0.0012345071],"study_design_codex":"design_other","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9995464,8.7576274e-7,0.00007633971,0.00011974407,0.00005719859,0.00019940383],"domain_scores_gemma":[0.9997926,0.000018071561,0.000011121507,0.00011415068,0.00002050204,0.00004354994],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000029935016,0.00012713812,0.000114737704,0.000053335058,0.000049310172,0.000036390666,0.00008691163,0.00008504523,0.000040056322],"category_scores_gemma":[0.0000046346763,0.00008907197,0.000017056653,0.00007395747,0.000027983398,0.00015684638,0.000018582568,0.00009465259,0.0000055872965],"study_design_candidate":"design_other","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00043593932,0.00007449459,0.011051429,0.0007569131,0.0003026955,0.000010412017,0.0011925545,0.0050865635,0.020003647,0.004317003,0.093264885,0.86350346],"study_design_scores_gemma":[0.007673553,0.0009995603,0.039099123,0.00045152463,0.00014817379,0.00024272047,0.0027359729,0.017516324,0.6165387,0.00034018635,0.31203148,0.0022226947],"about_ca_topic_score_codex":0.00001316014,"about_ca_topic_score_gemma":0.000042688935,"teacher_disagreement_score":0.86128074,"about_ca_system_score_codex":0.000017649776,"about_ca_system_score_gemma":0.000015142104,"threshold_uncertainty_score":0.36322495},"labels":[],"label_agreement":null},{"id":"W2105997113","doi":"10.1109/ectc.2007.373773","title":"Assembly Yields Characterization of High IO Density, Fine Pitch Flip Chip in Package Using No-Flow Underfill","year":2007,"lang":"en","type":"article","venue":"","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":6,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Advanced Micro Devices (Canada)","funders":"","keywords":"Flip chip; Interconnection; Materials science; Chip; Electronic engineering; Chip-scale package; Characterization (materials science); Process (computing); Flow (mathematics); Computer science; Composite material; Engineering; Nanotechnology; Layer (electronics)","score_opus":0.01583601093145781,"score_gpt":0.21762711924900013,"score_spread":0.20179110831754232,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2105997113","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.8787943,0.0000118778335,0.117847264,0.000037914422,0.00019828374,0.000084969455,0.0000034359616,0.00032055168,0.0027013968],"genre_scores_gemma":[0.99360037,0.000024766681,0.006142185,0.000022234934,0.000046332305,0.0000010900025,0.000019605743,0.000020721642,0.00012268068],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99928254,0.000005725038,0.00025459577,0.00011887905,0.00010820605,0.00023006622],"domain_scores_gemma":[0.9996685,0.000034627148,0.000035413446,0.00019724759,0.0000398388,0.000024393214],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00014496436,0.00012264214,0.00019054968,0.00017771233,0.000019065557,0.000011788829,0.00010767056,0.00019166013,0.000048304082],"category_scores_gemma":[0.00004213786,0.0001176317,0.000028422433,0.0002995249,0.000022970025,0.00012883164,0.00005111862,0.000151791,0.000019759931],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000013102639,0.0000471604,0.021862056,0.000085927815,0.000025996147,0.000020085843,0.000096191034,0.0018538982,0.96268326,0.0017875235,0.000080525846,0.011444269],"study_design_scores_gemma":[0.0003522513,0.00003846043,0.2763788,0.0000667848,0.000010070301,0.000005473185,0.000049510807,0.028200408,0.69417036,0.00041142575,0.0000782052,0.00023827708],"about_ca_topic_score_codex":0.0001116789,"about_ca_topic_score_gemma":0.00026422486,"teacher_disagreement_score":0.26851293,"about_ca_system_score_codex":0.000057948277,"about_ca_system_score_gemma":0.00000886463,"threshold_uncertainty_score":0.47968817},"labels":[],"label_agreement":null},{"id":"W2107925787","doi":"10.1109/ectc.2006.1645703","title":"A Novel Method for Bonding of Ionic Wafers","year":2006,"lang":"en","type":"article","venue":"","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McMaster University","funders":"McMaster University","keywords":"Materials science; Sapphire; Wafer; Annealing (glass); Silicon; Anodic bonding; Amorphous solid; Analytical Chemistry (journal); Wafer bonding; Ionic bonding; Composite material; Ion; Mineralogy; Optoelectronics; Optics; Crystallography; Chemistry","score_opus":0.013943120337111956,"score_gpt":0.2460100275343576,"score_spread":0.23206690719724565,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2107925787","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"methods","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.010077621,0.00009522083,0.9695166,0.00006445649,0.000052104984,0.00006623551,0.000003596107,0.00042334,0.019700835],"genre_scores_gemma":[0.628746,0.0000018252139,0.37047789,0.000003704974,0.000010177671,0.000009263931,0.0000012745116,0.000007104121,0.0007427856],"study_design_codex":"theoretical_or_conceptual","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9997526,6.3431634e-7,0.000082704064,0.000044523927,0.000027337794,0.00009220493],"domain_scores_gemma":[0.99986446,0.000041334613,0.000008168887,0.000072546274,0.000008519248,0.000004968236],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000048563765,0.000042168336,0.00007338447,0.000047544672,0.000010074956,0.000002928328,0.000053652493,0.000042535637,0.000011895705],"category_scores_gemma":[0.0000107474825,0.00003609005,0.00003286195,0.00006874596,0.000008894512,0.000025142097,0.000009035276,0.000026219794,0.000001841378],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0000029572077,0.000019494937,0.00018213563,0.00010658956,0.000034077522,2.6142325e-7,0.000023401732,0.016170451,0.32861975,0.6265937,0.010842091,0.017405078],"study_design_scores_gemma":[0.0007386139,0.00004766815,0.00086476473,0.000023984716,0.000025912525,0.000007574157,0.0003029864,0.21138042,0.7384538,0.026462847,0.021452071,0.00023935872],"about_ca_topic_score_codex":0.000038479146,"about_ca_topic_score_gemma":0.000010445095,"teacher_disagreement_score":0.6186683,"about_ca_system_score_codex":0.0000138038895,"about_ca_system_score_gemma":0.0000026792413,"threshold_uncertainty_score":0.14717095},"labels":[],"label_agreement":null},{"id":"W2114029889","doi":"10.1109/impact.2012.6420220","title":"Strategy for TSV scaling with consideration on thermo-mechanical stress and acceptable delay","year":2012,"lang":"en","type":"article","venue":"","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":12,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of British Columbia","funders":"","keywords":"Capacitance; Miniaturization; Scaling; Interconnection; Stress (linguistics); Materials science; Dimension (graph theory); Electronic engineering; Transmission (telecommunications); SIGNAL (programming language); Computer science; Engineering; Telecommunications; Nanotechnology; Electrode; Physics","score_opus":0.027046138112823997,"score_gpt":0.24098790207788778,"score_spread":0.21394176396506379,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2114029889","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.8797892,0.00022586768,0.11163815,0.000047371686,0.000066996115,0.0002084868,0.0000063465486,0.0005503582,0.00746727],"genre_scores_gemma":[0.99546796,0.000018457265,0.0043471833,0.000023392127,0.000034399287,0.00002414214,0.000003504628,0.000013897627,0.000067087676],"study_design_codex":"theoretical_or_conceptual","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9996486,0.0000030521178,0.00006658028,0.00006890117,0.000042726166,0.00017015776],"domain_scores_gemma":[0.9998162,0.000053384745,0.000008208673,0.000080498954,0.000012130988,0.000029585059],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00004784572,0.000076879995,0.000076475044,0.000023316577,0.000043436845,0.00003177139,0.000030243045,0.00007150908,0.00004981037],"category_scores_gemma":[0.000009744549,0.00005348475,0.000009601775,0.000027999711,0.00001654415,0.00013761026,0.000008936456,0.00006226189,0.0000040320865],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00014185417,0.00019857855,0.0076070065,0.0003517492,0.00031185878,0.0000059864533,0.00050183374,0.05624123,0.013599608,0.68213964,0.0034544116,0.23544626],"study_design_scores_gemma":[0.0022590342,0.00073405146,0.0056545986,0.00014263034,0.00008702864,0.000042780477,0.004497143,0.19574933,0.7805561,0.0076906686,0.0016403524,0.0009462776],"about_ca_topic_score_codex":0.000005370975,"about_ca_topic_score_gemma":0.00001701608,"teacher_disagreement_score":0.7669565,"about_ca_system_score_codex":0.000010510018,"about_ca_system_score_gemma":0.000004023978,"threshold_uncertainty_score":0.21810448},"labels":[],"label_agreement":null},{"id":"W2115924424","doi":"10.1109/ccece.2008.4564567","title":"Steady state thermal analysis of a reconfigurable wafer-scale circuit board","year":2008,"lang":"en","type":"article","venue":"Conference proceedings - Canadian Conference on Electrical and Computer Engineering","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":4,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":true,"route_about_ca":false,"ca_institutions":"Polytechnique Montréal; Université du Québec à Montréal; Université du Québec en Outaouais; Université du Québec à Trois-Rivières","funders":"Natural Sciences and Engineering Research Council of Canada; Université du Québec en Outaouais; CMC Microsystems","keywords":"Overheating (electricity); Thermal; Finite element method; Thermal analysis; Printed circuit board; Mechanical engineering; Soldering; Wafer; Materials science; Computer science; Electronic engineering; Engineering; Electrical engineering; Structural engineering; Optoelectronics; Composite material; Thermodynamics; Physics","score_opus":0.01729816363652765,"score_gpt":0.1762466350760698,"score_spread":0.15894847143954216,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2115924424","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.97312057,0.00017948732,0.016870715,0.00009847765,0.0001116572,0.00020699698,0.000027259728,0.0005121422,0.00887269],"genre_scores_gemma":[0.99901974,0.00030583885,0.0004218275,0.000046723755,0.000034176737,0.000030111749,0.000007355814,0.000029918527,0.00010430409],"study_design_codex":"design_other","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9983199,0.0000047149765,0.00036112283,0.00039564312,0.00020565363,0.00071296294],"domain_scores_gemma":[0.9991522,0.00004017679,0.000054452637,0.00016428037,0.00019949915,0.0003893886],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.00008066238,0.0003473018,0.0006054155,0.00096686766,0.00009790909,0.00009218075,0.00036579728,0.00018382973,0.00007406094],"category_scores_gemma":[0.00001653451,0.0003486432,0.00009972791,0.001122058,0.00009219147,0.00018706513,0.000024498353,0.0004567677,0.000009279205],"study_design_candidate":"simulation_or_modeling","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00012337776,0.00031969254,0.10077677,0.001121463,0.0066685216,0.0002750058,0.015346349,0.08579756,0.061435744,0.21232273,0.0036297238,0.51218307],"study_design_scores_gemma":[0.0002443084,0.00021331983,0.034818813,0.000074037336,0.000107189575,0.000019243116,0.000048497808,0.9598164,0.0033243592,0.00030804359,0.0004885881,0.00053718576],"about_ca_topic_score_codex":0.0015205586,"about_ca_topic_score_gemma":0.0007047005,"teacher_disagreement_score":0.87401885,"about_ca_system_score_codex":0.00012877099,"about_ca_system_score_gemma":0.00016251448,"threshold_uncertainty_score":0.9998966},"labels":[],"label_agreement":null},{"id":"W2117283955","doi":"10.1149/1.3223985","title":"Role of Heating on Plasma-Activated Silicon Wafers Bonding","year":2009,"lang":"en","type":"article","venue":"Journal of The Electrochemical Society","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":30,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McMaster University","funders":"","keywords":"Silicon; Wafer; Materials science; Silicon oxide; Plasma activation; Etching (microfabrication); Surface roughness; Anodic bonding; Composite material; Wafer bonding; Oxide; Reactive-ion etching; Plasma; Layer (electronics); Nanotechnology; Optoelectronics; Metallurgy; Silicon nitride","score_opus":0.005075655904516735,"score_gpt":0.20162285541641248,"score_spread":0.19654719951189575,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2117283955","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99806,0.00024385075,0.00024716882,0.00046543457,0.00004293085,0.00003464364,3.541349e-7,0.000063990505,0.00084162893],"genre_scores_gemma":[0.9984183,0.000049438604,0.0013785507,0.00006463508,0.00006240877,3.470357e-7,2.0402584e-7,0.000008685308,0.000017481081],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9993282,0.0000073369815,0.00024164072,0.00005232087,0.00017738562,0.000193101],"domain_scores_gemma":[0.99965864,0.000060403523,0.00011707183,0.00010156977,0.000032760174,0.000029555435],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00009910778,0.00009626497,0.00018632272,0.000018316048,0.000042043583,0.000007722815,0.0002423953,0.00012054888,0.000004458986],"category_scores_gemma":[0.00008055849,0.00006424909,0.00026343865,0.0001922549,0.00003132592,0.00005540805,0.000015240954,0.00056906196,4.9580535e-7],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000014557265,0.00001988358,0.000073690884,0.000006057852,0.00005551306,1.6234773e-7,0.00012967891,0.00019376786,0.9965789,0.00022135812,0.00056737644,0.0021390566],"study_design_scores_gemma":[0.00019722784,0.000111055255,0.00026711152,0.00005842972,0.000016107984,0.000014841848,0.00020588143,0.0023073822,0.9940575,0.0024704009,0.00022913846,0.00006496721],"about_ca_topic_score_codex":4.8901046e-7,"about_ca_topic_score_gemma":4.51399e-8,"teacher_disagreement_score":0.0025214416,"about_ca_system_score_codex":0.00015270239,"about_ca_system_score_gemma":0.000014806062,"threshold_uncertainty_score":0.26200017},"labels":[],"label_agreement":null},{"id":"W2119741953","doi":"10.1088/0957-4484/21/13/134011","title":"Comprehensive investigation of sequential plasma activated Si/Si bonded interfaces for nano-integration on the wafer scale","year":2010,"lang":"en","type":"article","venue":"Nanotechnology","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":35,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McMaster University","funders":"Natural Sciences and Engineering Research Council of Canada; University of Texas at Dallas; McMaster University","keywords":"Materials science; Wafer; Nanostructure; Nanotechnology; Nanowire; Nanometre; Reactive-ion etching; Etching (microfabrication); Plasma etching; Plasma; Silicon; Contact angle; Wafer bonding; Optoelectronics; Composite material; Layer (electronics)","score_opus":0.020292744350624056,"score_gpt":0.23063941347906194,"score_spread":0.21034666912843789,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2119741953","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9935199,0.000020460906,0.0027669375,0.0016571019,0.0005189724,0.00041268053,0.000018253464,0.0009328735,0.00015282181],"genre_scores_gemma":[0.9976549,0.000014455166,0.0020838317,0.000044073724,0.00002261294,0.00009837822,0.000016750304,0.000024513733,0.000040443516],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9992873,0.0000136768,0.00022844347,0.0001774539,0.00009036518,0.00020273874],"domain_scores_gemma":[0.9993024,0.00016105545,0.00007858152,0.00034410114,0.00009866413,0.000015182338],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000067874185,0.00016395781,0.00020365113,0.00019081951,0.00007288263,0.000012625831,0.0003042353,0.0005995493,0.000021877448],"category_scores_gemma":[0.00014088831,0.0001191089,0.0000503324,0.00023573241,0.000376862,0.00007666268,0.00005038123,0.0004899852,0.000015392317],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000026571439,0.00000889387,0.000032101816,0.000019550866,0.000029310806,2.686491e-7,0.00010344355,0.00011427474,0.9763455,0.012558377,0.00048234817,0.010279398],"study_design_scores_gemma":[0.00031213902,0.00014044107,0.00007144906,0.000026937352,0.000012620007,0.0000052466867,0.00032319597,0.006221348,0.98272425,0.007844168,0.0022012976,0.00011689527],"about_ca_topic_score_codex":0.000012886014,"about_ca_topic_score_gemma":0.00006438874,"teacher_disagreement_score":0.010162503,"about_ca_system_score_codex":0.000032985445,"about_ca_system_score_gemma":0.000017607033,"threshold_uncertainty_score":0.485712},"labels":[],"label_agreement":null},{"id":"W2120154505","doi":"10.1109/mwsym.2004.1339060","title":"A novel MEMS LTCC switch matrix","year":2004,"lang":"en","type":"article","venue":"","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":33,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"COM DEV International","funders":"University of Waterloo","keywords":"Microelectromechanical systems; Materials science; Interconnection; Crossbar switch; Substrate (aquarium); Planar; Ceramic; Matrix (chemical analysis); Optoelectronics; Electronic engineering; Electrical engineering; Computer science; Engineering; Telecommunications; Composite material","score_opus":0.009674603285278579,"score_gpt":0.21326364876860385,"score_spread":0.20358904548332526,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2120154505","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.34804803,0.00055950234,0.51899064,0.0007388138,0.0003688478,0.0001320989,0.0000036787578,0.0063851625,0.124773234],"genre_scores_gemma":[0.9839638,0.000031624117,0.015263594,0.000022830343,0.000022373857,0.0000060829016,7.317188e-7,0.000012751388,0.00067622116],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99968207,2.1792921e-7,0.00006794022,0.00006237125,0.000052241372,0.000135158],"domain_scores_gemma":[0.9998311,0.0000050208787,0.0000039882398,0.00013530947,0.000006380713,0.000018231929],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00001891328,0.00006560596,0.00006432749,0.000039007904,0.000015006786,0.000011228542,0.000097617085,0.000064119384,0.000073159346],"category_scores_gemma":[0.000007400673,0.00005427708,0.00002272007,0.00010134902,0.000013337566,0.000050428847,0.000020998144,0.00007425689,0.0002677741],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0000062935505,0.00015358448,0.0007152645,0.0001501093,0.00017989108,0.00004187883,0.0004827645,0.10177671,0.43669096,0.40813825,0.014233625,0.037430666],"study_design_scores_gemma":[0.0033527229,0.00013839535,0.004123277,0.0000804787,0.00003866578,0.00016056567,0.0013655401,0.008967672,0.8493996,0.053256515,0.077820666,0.0012958919],"about_ca_topic_score_codex":0.000041540956,"about_ca_topic_score_gemma":0.000017494802,"teacher_disagreement_score":0.63591576,"about_ca_system_score_codex":0.00003053707,"about_ca_system_score_gemma":0.00000537952,"threshold_uncertainty_score":0.34417835},"labels":[],"label_agreement":null},{"id":"W2125270809","doi":"10.1109/ectc.2009.5074198","title":"Surface activated bonding of 8 in. Si wafers for MEMS and microfluidic packaging","year":2009,"lang":"en","type":"article","venue":"","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McMaster University","funders":"University of Texas at Dallas","keywords":"Wafer; Materials science; Wafer bonding; Anodic bonding; Microelectromechanical systems; Thermocompression bonding; Optoelectronics; Direct bonding; Silicon; High-resolution transmission electron microscopy; Transmission electron microscopy; Nanotechnology; Composite material; Layer (electronics)","score_opus":0.011711597268125767,"score_gpt":0.2226811362799177,"score_spread":0.21096953901179194,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2125270809","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99350435,0.0009532659,0.0031208931,0.0001861172,0.000027738803,0.00009752563,0.0000014476843,0.00027313072,0.00183556],"genre_scores_gemma":[0.9980963,0.00019253725,0.0015816076,0.000011924217,0.0000029820867,0.0000012227673,0.00000115847,0.0000074045306,0.00010487135],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9996635,0.0000013961427,0.00009949,0.00007122354,0.000027747237,0.00013666356],"domain_scores_gemma":[0.9998648,0.0000346962,0.0000097717875,0.00007077109,0.0000073801575,0.000012545684],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000050635525,0.00006629578,0.0001139886,0.000064798995,0.000012305578,0.0000062333497,0.000048128335,0.000055615506,0.0000033892643],"category_scores_gemma":[0.000016513877,0.000060366143,0.000015141021,0.00011717632,0.000016367288,0.00007000885,0.000008902396,0.00005348319,4.464283e-7],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0000036222252,0.0000048018496,0.0021890933,0.00002871986,0.000007864453,5.9920757e-7,0.000084212195,0.00015580446,0.9884431,0.0012793932,0.001073783,0.00672905],"study_design_scores_gemma":[0.00026313457,0.000025912042,0.0026707218,0.000028179167,0.0000032666742,0.000001108615,0.00040327507,0.0012882594,0.9934866,0.0009820015,0.00076265284,0.000084879466],"about_ca_topic_score_codex":0.000010680085,"about_ca_topic_score_gemma":0.0000016009027,"teacher_disagreement_score":0.0066441707,"about_ca_system_score_codex":0.000019543624,"about_ca_system_score_gemma":0.000002394972,"threshold_uncertainty_score":0.24616599},"labels":[],"label_agreement":null},{"id":"W2134577393","doi":"10.1109/ectc.2010.5490833","title":"Development of an 18 &amp;#x00D7; 18 mm package-on-package using C4NP flip chip attach and back side grind","year":2010,"lang":"en","type":"article","venue":"","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"IBM (Canada)","funders":"","keywords":"Flip chip; Quad Flat No-leads package; Package on package; Die (integrated circuit); Chip-scale package; Grind; Integrated circuit packaging; Soldering; Grinding; Chip; Materials science; Wafer; Packaging engineering; Engineering drawing; Computer science; Mechanical engineering; Integrated circuit; Optoelectronics; Electrical engineering; Engineering; Composite material; Wafer dicing; Layer (electronics); Nanotechnology","score_opus":0.04527938184958245,"score_gpt":0.273495145407526,"score_spread":0.22821576355794357,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2134577393","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9719919,0.00003527806,0.0060674986,0.00001952735,0.00019164947,0.00014105586,0.000006163249,0.0003912339,0.021155726],"genre_scores_gemma":[0.8310097,0.00000907914,0.16838744,0.000015799273,0.00003821862,0.000004628366,0.000009405915,0.00003590433,0.0004898322],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9989827,0.0000087888375,0.0002971633,0.00023736525,0.0001610296,0.00031292113],"domain_scores_gemma":[0.9993536,0.000044963195,0.00004176003,0.00044163666,0.00002864054,0.00008939781],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0001475652,0.00023057638,0.000246705,0.00013876578,0.00008052519,0.00004046436,0.00020467318,0.00020191031,0.0005414317],"category_scores_gemma":[0.000045249908,0.00020042891,0.00003204435,0.00015335956,0.000094737894,0.00016191631,0.000096705255,0.0003146133,0.00012365988],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000019503248,0.00014601383,0.01199447,0.00027171397,0.00015874674,0.000010983485,0.001319563,0.0006249238,0.9126956,0.0018357984,0.0015757431,0.06934694],"study_design_scores_gemma":[0.00097585644,0.00007928425,0.05761653,0.00010918309,0.00003076092,0.00004732766,0.000813446,0.004534793,0.9082949,0.0006825548,0.025847215,0.00096811727],"about_ca_topic_score_codex":0.000019360985,"about_ca_topic_score_gemma":0.00023602085,"teacher_disagreement_score":0.16231994,"about_ca_system_score_codex":0.000028030818,"about_ca_system_score_gemma":0.000027691725,"threshold_uncertainty_score":0.81732535},"labels":[],"label_agreement":null},{"id":"W2135369720","doi":"10.1109/ted.2005.850668","title":"On-chip antennas in silicon ICs and their application","year":2005,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":261,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Toronto","funders":"","keywords":"CMOS; Electronic circuit; Chip; Electronic engineering; Integrated circuit; Wireless; Radio frequency; System in package; Key (lock); System on a chip; Electrical engineering; Computer science; Engineering; Embedded system; Telecommunications","score_opus":0.006284640946332033,"score_gpt":0.20831543107228964,"score_spread":0.20203079012595762,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2135369720","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.86878157,0.0005923439,0.12888242,0.000313111,0.00004207017,0.00015536099,0.0000046484042,0.00051300955,0.0007154532],"genre_scores_gemma":[0.99922687,0.00046797033,0.00008421411,0.00008540462,0.000016438978,0.0000625864,0.0000011321561,0.000018470151,0.00003690458],"study_design_codex":"design_other","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9994561,0.000008135972,0.00012322694,0.00015410969,0.000053180207,0.00020524532],"domain_scores_gemma":[0.99975675,0.00006022032,0.000014433103,0.00013726162,0.000007883062,0.000023425266],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000047943802,0.00013399869,0.00011405717,0.00016765653,0.000048989696,0.00001612292,0.000082229795,0.00009843273,0.000008383559],"category_scores_gemma":[8.4946765e-7,0.00011813811,0.00002613507,0.0001948431,0.000026929207,0.00010902096,3.3400897e-7,0.00027490736,0.000030930853],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000058971662,0.000253917,0.00023790327,0.0000828444,0.000083599174,0.000001356046,0.00054629985,0.12126793,0.079531215,0.0015929501,0.000101023084,0.796242],"study_design_scores_gemma":[0.0005731624,0.00025970823,0.0019900086,0.000054418935,0.000016123779,0.000012059964,0.00024308769,0.18274748,0.80893564,0.001371627,0.003395127,0.0004015553],"about_ca_topic_score_codex":0.000013922506,"about_ca_topic_score_gemma":0.00073216984,"teacher_disagreement_score":0.79584044,"about_ca_system_score_codex":0.00006501927,"about_ca_system_score_gemma":0.0000063899456,"threshold_uncertainty_score":0.4817532},"labels":[],"label_agreement":null},{"id":"W2138439018","doi":"10.1109/ccece.1995.528157","title":"Interdisciplinary design optimization for high-speed packages and interconnects","year":2002,"lang":"en","type":"article","venue":"","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":2,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Bell (Canada)","funders":"","keywords":"Design for manufacturability; Signal integrity; Reliability (semiconductor); Printed circuit board; Computer science; Reliability engineering; Physical design; Electronic engineering; Integrated circuit design; Isolation (microbiology); Power integrity; Circuit design; Embedded system; Engineering; Electrical engineering; Power (physics)","score_opus":0.024946140561848688,"score_gpt":0.2169893104446251,"score_spread":0.19204316988277642,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2138439018","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"methods","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.02418918,0.0003162647,0.97156096,0.00035884965,0.00011436096,0.00017721973,0.0000019637005,0.0008858925,0.0023953095],"genre_scores_gemma":[0.9276711,0.00010195313,0.071867555,0.000014095319,0.000017020418,0.0000140534175,0.0000022820373,0.000014520925,0.00029743637],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9997085,0.0000034656107,0.0000769483,0.00008495131,0.000022738077,0.000103448256],"domain_scores_gemma":[0.9998206,0.00006002694,0.0000074217046,0.00008450563,0.000010785133,0.000016657938],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00003080897,0.000074867516,0.00007991632,0.000056975587,0.000032988908,0.000021478563,0.00005597196,0.00005945297,0.00014150437],"category_scores_gemma":[0.000019557532,0.00006320393,0.000012862854,0.00004788371,0.000023369204,0.000105819854,0.000052168445,0.000038377453,0.000008554231],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00003220919,0.000077762736,0.00011319781,0.0003121534,0.00019087234,0.000017777355,0.0020190584,0.62992704,0.0044012317,0.017463898,0.12380992,0.2216349],"study_design_scores_gemma":[0.00026934015,0.000102182006,0.00004065013,0.000018419432,0.000008221902,0.000006089961,0.00035253644,0.9802108,0.015597524,0.003203514,0.00006787955,0.00012283491],"about_ca_topic_score_codex":4.874887e-7,"about_ca_topic_score_gemma":8.132318e-7,"teacher_disagreement_score":0.9034819,"about_ca_system_score_codex":0.000012584159,"about_ca_system_score_gemma":4.7032236e-7,"threshold_uncertainty_score":0.25773814},"labels":[],"label_agreement":null},{"id":"W2143876459","doi":"10.1109/tadvp.2006.873136","title":"A General Method for the Connection of a Component Thermal Model to a Board","year":2006,"lang":"en","type":"article","venue":"IEEE Transactions on Advanced Packaging","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":3,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Carleton University","funders":"","keywords":"Connection (principal bundle); Component (thermodynamics); Thermal; Electronic component; Printed circuit board; Flow (mathematics); Electronic packaging; Thermal conductivity; Boundary value problem; Junction temperature; Simple (philosophy); Heat flow; Computer science; Mechanical engineering; Mechanics; Electronic engineering; Engineering; Mathematics; Thermodynamics; Mathematical analysis; Physics","score_opus":0.016120772527123694,"score_gpt":0.26226279009092485,"score_spread":0.24614201756380116,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2143876459","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"methods","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.07319332,0.000067109286,0.9252717,0.00022225533,0.00024934302,0.00034964728,0.000029116414,0.00038566694,0.00023185635],"genre_scores_gemma":[0.8218843,0.000012128455,0.17772,0.000040059836,0.00001856041,0.00019467057,8.61866e-7,0.000024112605,0.00010530912],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99941766,0.000008858651,0.00016870357,0.00013060476,0.0000850111,0.00018918552],"domain_scores_gemma":[0.9996028,0.00012440696,0.000023079698,0.00019974967,0.000029956263,0.000019998606],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00007237171,0.00012269277,0.00014331492,0.000105912135,0.000109136985,0.000009749134,0.00010045472,0.000045045228,0.0000044898866],"category_scores_gemma":[0.0000020634227,0.00009923199,0.00009621579,0.00015869788,0.000021924456,0.00006952776,7.6436623e-7,0.00012522009,0.000002537528],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000026281183,0.000017431916,9.753679e-7,0.000014087085,0.00002237794,1.5708025e-7,0.00007235331,0.77960557,0.163944,0.00032670525,0.000042893713,0.055927176],"study_design_scores_gemma":[0.00029300762,0.000030348594,0.000025402529,0.00001626388,0.000022645747,0.0000014114378,0.00009227711,0.6765756,0.3219161,0.0005649368,0.00037153918,0.0000904668],"about_ca_topic_score_codex":0.000038106704,"about_ca_topic_score_gemma":0.000046283203,"teacher_disagreement_score":0.74869096,"about_ca_system_score_codex":0.00005256125,"about_ca_system_score_gemma":0.0000066968637,"threshold_uncertainty_score":0.4046563},"labels":[],"label_agreement":null},{"id":"W2145311435","doi":"10.1109/ectc.1997.606292","title":"Semiconductor packaging for the telecommunications industry","year":2002,"lang":"en","type":"article","venue":"","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Nortel (Canada)","funders":"Siemens","keywords":"Competitor analysis; Telecommunications; Semiconductor industry; Interconnection; Deregulation; Semiconductor device fabrication; Manufacturing engineering; Reliability (semiconductor); Integrated circuit packaging; Telecommunications service; Bandwidth (computing); Business; Computer science; Engineering; Electrical engineering; Marketing","score_opus":0.046677902881530106,"score_gpt":0.2295869824141918,"score_spread":0.18290907953266167,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2145311435","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.47311148,0.01641513,0.09797844,0.030172791,0.0010663185,0.0014438401,0.000040834424,0.011288923,0.36848223],"genre_scores_gemma":[0.9946553,0.00019863604,0.0030392152,0.00007060372,0.00002331287,0.00005257796,8.1046596e-7,0.000009712535,0.0019498362],"study_design_codex":"not_applicable","study_design_gemma":"not_applicable","domain_scores_codex":[0.999787,0.0000016589796,0.000056666395,0.00003598818,0.000020732821,0.000098009376],"domain_scores_gemma":[0.9995762,0.00010909605,0.0000051873526,0.00029180927,0.000008401932,0.000009285189],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000026924703,0.000043395008,0.000036746584,0.000018621853,0.000075572636,0.000014661118,0.00021066116,0.00008175334,0.0002751607],"category_scores_gemma":[0.000027079257,0.000028545035,0.000019744824,0.00007315938,0.000026469068,0.000043777796,0.000023998049,0.000197982,0.000034709414],"study_design_candidate":"not_applicable","study_design_consensus":"not_applicable","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[5.873601e-7,0.000040448587,0.003676875,0.00004171413,0.00019332633,5.1853095e-7,0.00074235816,0.004865931,0.008633525,0.035382275,0.7142075,0.23221497],"study_design_scores_gemma":[0.00036742506,0.000019629313,0.0016803106,0.000019548837,0.000036910373,0.00001246918,0.0034820072,0.34144545,0.035534613,0.0028683054,0.6141675,0.00036584193],"about_ca_topic_score_codex":0.000002470359,"about_ca_topic_score_gemma":0.000004379183,"teacher_disagreement_score":0.5215438,"about_ca_system_score_codex":0.000011283391,"about_ca_system_score_gemma":0.0000010221906,"threshold_uncertainty_score":0.30128166},"labels":[],"label_agreement":null},{"id":"W2147584640","doi":"10.1109/dftvs.2002.1173496","title":"Manufacturability analysis of analog CMOS ICs through examination of multiple layout solutions","year":2003,"lang":"en","type":"article","venue":"","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":7,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Simon Fraser University","funders":"","keywords":"Design for manufacturability; CMOS; Integrated circuit layout; IC layout editor; CAD; Physical design; Computer science; Design layout record; Electronic engineering; Integrated circuit design; Reliability engineering; Technology CAD; Semiconductor device modeling; Integrated circuit; Circuit design; Engineering; Engineering drawing; Circuit extraction; Electrical engineering; Equivalent circuit","score_opus":0.02908181739843513,"score_gpt":0.22722306127263556,"score_spread":0.19814124387420043,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2147584640","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.8292241,0.00010082396,0.15509544,0.000009439178,0.000034880515,0.00006973086,0.000022217733,0.00019195628,0.015251431],"genre_scores_gemma":[0.9948232,0.000033580007,0.005068596,0.0000025031065,0.000001402716,0.0000045357438,0.000013469595,0.000004670192,0.00004801403],"study_design_codex":"simulation_or_modeling","study_design_gemma":"observational","domain_scores_codex":[0.9994686,0.000018955488,0.00022058908,0.00008935929,0.00008946689,0.00011300085],"domain_scores_gemma":[0.99958503,0.00008792776,0.000036571673,0.00022968497,0.000050271854,0.000010516438],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00013431502,0.000071809096,0.00020330206,0.00013438365,0.000021284724,0.0000025573186,0.000072384115,0.00008358808,0.00013064822],"category_scores_gemma":[0.00012226119,0.000062965526,0.000092501316,0.00057669677,0.00007046324,0.00008423725,0.0000139000485,0.00005811598,0.0000022092436],"study_design_candidate":"simulation_or_modeling","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000007572369,0.0004816197,0.2120304,0.0004105168,0.0041424525,0.000001970614,0.002299059,0.61010766,0.02532703,0.115627766,0.0007740822,0.02878989],"study_design_scores_gemma":[0.00027805072,0.00003919585,0.553688,0.0000072436296,0.00054315856,5.608226e-7,0.0016127401,0.18417616,0.25646555,0.0025773773,0.0003986509,0.00021333602],"about_ca_topic_score_codex":0.000075316515,"about_ca_topic_score_gemma":0.00016599309,"teacher_disagreement_score":0.42593148,"about_ca_system_score_codex":0.00003033235,"about_ca_system_score_gemma":0.0000051614347,"threshold_uncertainty_score":0.25676596},"labels":[],"label_agreement":null},{"id":"W2148250189","doi":"10.1145/1146909.1146957","title":"Entering the hot zone","year":2006,"lang":"en","type":"article","venue":"","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Apache (Canada)","funders":"","keywords":"Computer science","score_opus":0.0044928213024054,"score_gpt":0.1570455169768018,"score_spread":0.1525526956743964,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2148250189","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.51945335,0.00053469586,0.082540885,0.00032989384,0.00021573582,0.00006241092,7.968807e-7,0.0027555549,0.39410666],"genre_scores_gemma":[0.9979451,0.000012453615,0.00053807505,0.000013823303,0.000029687073,0.0000040601694,4.0371103e-7,0.000005256283,0.0014511965],"study_design_codex":"theoretical_or_conceptual","study_design_gemma":"not_applicable","domain_scores_codex":[0.9998288,7.831303e-7,0.000039356695,0.00002829595,0.000026619075,0.00007615239],"domain_scores_gemma":[0.9998916,0.0000070892675,0.0000021820053,0.00009377185,0.000002106898,0.0000032465641],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000015102858,0.00003371514,0.000027412949,0.000011990362,0.000017967373,0.0000104334595,0.00007269408,0.000018776127,0.00009240893],"category_scores_gemma":[0.0000012682788,0.000020209929,0.000012215025,0.00003965285,0.000014065431,0.000021523505,0.000016374963,0.000040919895,0.00006700901],"study_design_candidate":"not_applicable","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0000065426293,0.000056720142,0.0075651105,0.00009183828,0.000109602224,0.00004151053,0.00022987108,0.048062425,0.078887485,0.2955396,0.2952062,0.2742031],"study_design_scores_gemma":[0.00046139857,0.00003714181,0.039033696,0.000019050836,0.00001651996,0.000037625166,0.00072104693,0.06338763,0.3659643,0.0084496895,0.52135086,0.0005210243],"about_ca_topic_score_codex":0.000026227075,"about_ca_topic_score_gemma":0.000022632676,"teacher_disagreement_score":0.4784917,"about_ca_system_score_codex":0.000006196717,"about_ca_system_score_gemma":5.0292687e-7,"threshold_uncertainty_score":0.1011813},"labels":[],"label_agreement":null},{"id":"W2152427310","doi":"10.4028/www.scientific.net/ssp.219.233","title":"The Role of Mass Transfer in Removal of Cross-Linked Sacrificial Layers in 3DI Applications","year":2014,"lang":"en","type":"article","venue":"Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":2,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Nexen (Canada)","funders":"","keywords":"Materials science; Passivation; Wafer; Photoresist; Thermal copper pillar bump; Nanotechnology; Soldering; Microelectronics; Layer (electronics); Composite material; Flip chip; Adhesive","score_opus":0.019659459608647734,"score_gpt":0.2781461692058208,"score_spread":0.25848670959717307,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2152427310","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.93244594,0.0042014555,0.026482392,0.00011300073,0.0005459224,0.0026481363,0.028776873,0.00057935505,0.0042069396],"genre_scores_gemma":[0.979562,0.014633278,0.00060237397,0.000053997206,0.00013280765,0.00017392023,0.004564748,0.00016751516,0.00010935413],"study_design_codex":"design_other","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99362594,0.00030803363,0.002345232,0.0014078785,0.0007115821,0.0016013405],"domain_scores_gemma":[0.99503285,0.0006021342,0.00033765112,0.003531115,0.0001715205,0.00032471967],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.0020784955,0.0008767256,0.0014556873,0.00061422127,0.00035953528,0.00024887227,0.0025584863,0.00020114123,0.00003291962],"category_scores_gemma":[0.00015984198,0.00076285825,0.00013653566,0.0010721531,0.0009058094,0.0010014992,0.0012034747,0.00086802954,0.00003753288],"study_design_candidate":"simulation_or_modeling","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0051026763,0.0039381604,0.02580132,0.0046508773,0.0024966688,0.00021592417,0.034434147,0.15178461,0.12037427,0.0110026505,0.0031970397,0.63700163],"study_design_scores_gemma":[0.014153802,0.0010241788,0.011196965,0.0006298062,0.00032614637,0.000054335815,0.009458366,0.52991027,0.014084786,0.074686155,0.3399753,0.0044999016],"about_ca_topic_score_codex":0.00034528153,"about_ca_topic_score_gemma":0.0014023763,"teacher_disagreement_score":0.6325018,"about_ca_system_score_codex":0.00015634154,"about_ca_system_score_gemma":0.00013893,"threshold_uncertainty_score":0.9994822},"labels":[],"label_agreement":null},{"id":"W2155274409","doi":"10.1109/icecs.1998.813941","title":"Methods and tools for characterisation of semiconductor device models","year":2002,"lang":"en","type":"article","venue":"","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Memorial University of Newfoundland","funders":"","keywords":"Computer science; Process (computing); Semiconductor device modeling; Semiconductor device; Electronic engineering; Engineering; Materials science","score_opus":0.12652734981328617,"score_gpt":0.30379688923260445,"score_spread":0.17726953941931828,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2155274409","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.62909234,0.00046685967,0.36617538,0.00004763337,0.000056597644,0.00011494126,0.00000552464,0.00029679423,0.003743909],"genre_scores_gemma":[0.870973,0.00012353598,0.12877747,0.000009638163,0.00000815924,0.000014192154,0.0000014844236,0.000006291267,0.000086205466],"study_design_codex":"design_other","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9997869,0.0000031973332,0.000083480234,0.00004881945,0.00001811402,0.000059478974],"domain_scores_gemma":[0.9997981,0.00009761798,0.000011064159,0.00007069402,0.000013795839,0.000008724784],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000051886178,0.000042860902,0.00008008277,0.000027773563,0.000007900933,0.000011181677,0.0000341362,0.000048100534,0.0000364706],"category_scores_gemma":[0.00004027434,0.000037133086,0.000012990554,0.000032537544,0.000011361306,0.00028484786,0.000008606403,0.00002433372,0.0000010851177],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0000014693461,0.000007755185,0.000026166725,0.00014095283,0.00003000885,8.3121556e-8,0.00039005638,0.0006829141,0.35697356,0.009835977,0.0006962328,0.6312148],"study_design_scores_gemma":[0.00016763227,0.000020195697,0.00019678021,0.000010212007,0.000011294223,0.0000018926016,0.00031128273,0.5617729,0.4297596,0.005297687,0.0023448907,0.000105654355],"about_ca_topic_score_codex":8.2513543e-7,"about_ca_topic_score_gemma":4.950255e-7,"teacher_disagreement_score":0.6311092,"about_ca_system_score_codex":0.0000054203497,"about_ca_system_score_gemma":5.707157e-7,"threshold_uncertainty_score":0.15142433},"labels":[],"label_agreement":null},{"id":"W2155387283","doi":"10.1109/iscas.1998.705297","title":"Rapid extraction of capacitance in a-Si imaging arrays","year":2002,"lang":"en","type":"article","venue":"","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":6,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Capacitance; Parasitic capacitance; Conductor; Dielectric; Computation; Microelectromechanical systems; Electric field; Materials science; Electronic engineering; Electrical capacitance tomography; Charge density; Computer science; Coupling (piping); Optoelectronics; Electrical engineering; Algorithm; Engineering; Physics","score_opus":0.015242725229165475,"score_gpt":0.1938791717969466,"score_spread":0.17863644656778113,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2155387283","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.5536552,0.0036211403,0.044696197,0.00023295025,0.00027601657,0.0000928874,0.0000014033507,0.0010863354,0.39633784],"genre_scores_gemma":[0.9969496,0.000330034,0.0025189538,0.0000070152005,0.000007898697,0.0000035982382,1.7394471e-7,0.0000059623917,0.0001767798],"study_design_codex":"design_other","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9997277,0.0000019434074,0.000093727365,0.00004919208,0.00003817244,0.00008926356],"domain_scores_gemma":[0.9998711,0.000013539062,0.000009293515,0.000093352326,0.0000059429904,0.000006800593],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000027099535,0.000044366003,0.000063230866,0.00007123988,0.000005828844,0.0000030849956,0.000047328947,0.000026858335,0.00024705936],"category_scores_gemma":[0.000011616983,0.000042463857,0.00001373861,0.00011140905,0.000019134925,0.00011038436,0.0000028094867,0.00007683447,0.000025181937],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0000029853602,0.0000779295,0.016429534,0.00014067077,0.000024084282,0.000026124007,0.00091478816,0.007229137,0.42934266,0.008532917,0.016882703,0.5203965],"study_design_scores_gemma":[0.000567955,0.000022491518,0.01125874,0.00008522462,0.0000063729312,0.00002766075,0.0018849089,0.34633368,0.6241061,0.003059119,0.012263959,0.00038378383],"about_ca_topic_score_codex":0.000010685706,"about_ca_topic_score_gemma":0.000009148525,"teacher_disagreement_score":0.5200127,"about_ca_system_score_codex":0.000019258086,"about_ca_system_score_gemma":5.11739e-7,"threshold_uncertainty_score":0.27051267},"labels":[],"label_agreement":null},{"id":"W2157736916","doi":"10.1117/1.jmm.14.2.024001","title":"Mapping stresses in high aspect ratio polysilicon electrical through-wafer interconnects","year":2015,"lang":"en","type":"article","venue":"Journal of Micro/Nanolithography MEMS and MOEMS","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"National Institute for Nanotechnology; Micralyne; University of Alberta","funders":"National Research Council Canada; Natural Sciences and Engineering Research Council of Canada; Alberta Innovates - Technology Futures","keywords":"Materials science; Wafer; Optoelectronics; Deep reactive-ion etching; Chemical vapor deposition; Microelectromechanical systems; Raman spectroscopy; Silicon; Polysilicon depletion effect; Reactive-ion etching; Etching (microfabrication); Electronic engineering; Transistor; Nanotechnology; Electrical engineering; Optics; Layer (electronics)","score_opus":0.015995856368098835,"score_gpt":0.21885081278858376,"score_spread":0.20285495642048493,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2157736916","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.98044384,0.016160479,0.0020864732,0.00017849046,0.0004110595,0.00008886815,0.0000036239271,0.00009188029,0.0005353175],"genre_scores_gemma":[0.99602836,0.0020877155,0.0016678935,0.000040888044,0.00013265204,0.0000036184476,0.0000012372606,0.000022537291,0.000015083464],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9988406,0.000025715543,0.00049416634,0.00014475915,0.00016835394,0.00032640755],"domain_scores_gemma":[0.999482,0.00005719701,0.00012334553,0.00014959188,0.00008819482,0.0000997133],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00024175853,0.00020519999,0.00042160388,0.000608084,0.00003038555,0.0000643232,0.00019681173,0.00016480948,0.000006303227],"category_scores_gemma":[0.000063446896,0.0001649934,0.00012481336,0.00060130854,0.00007997361,0.00032759225,0.000038579743,0.00042926968,0.0000021123114],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00033063727,0.00069152843,0.12672554,0.0003066275,0.0012614193,0.0008757908,0.008729356,0.0014234401,0.76698506,0.008686651,0.013600623,0.070383295],"study_design_scores_gemma":[0.010702991,0.003210854,0.16511655,0.0014534792,0.00022224877,0.0025502802,0.012532523,0.0011372018,0.70805705,0.044141162,0.04862065,0.0022550358],"about_ca_topic_score_codex":0.00006320929,"about_ca_topic_score_gemma":0.00003154062,"teacher_disagreement_score":0.06812826,"about_ca_system_score_codex":0.000050206683,"about_ca_system_score_gemma":0.000036443664,"threshold_uncertainty_score":0.67282355},"labels":[],"label_agreement":null},{"id":"W2158969233","doi":"10.1109/stherm.1992.172851","title":"Analysis of thermal vias in high density interconnect technology","year":2003,"lang":"en","type":"article","venue":"","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":54,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Interconnection; Materials science; Thermal; Optoelectronics; Computer science; Electronic engineering; Electrical engineering; Telecommunications; Engineering; Physics","score_opus":0.005842922069534908,"score_gpt":0.18995625308596734,"score_spread":0.18411333101643243,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2158969233","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.98795253,0.00014416245,0.0052974867,0.000026452346,0.000034293455,0.000030239627,7.185156e-7,0.000389123,0.0061250026],"genre_scores_gemma":[0.99878985,0.000026059304,0.0011360705,0.000006403777,9.449999e-7,0.000003339121,7.0183074e-7,0.000005227436,0.00003142055],"study_design_codex":"observational","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9996328,0.000007100953,0.00012992726,0.00007942244,0.000033675708,0.00011709175],"domain_scores_gemma":[0.999752,0.000021289085,0.0000114815475,0.00019566267,0.000012207173,0.00000739823],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00006265014,0.000064267064,0.00020196274,0.00062028907,0.000005523538,0.00000203373,0.0000998395,0.00011723782,0.00015012432],"category_scores_gemma":[0.000048216054,0.000055241355,0.000041322146,0.0011211643,0.000045443772,0.000027960088,0.000020897636,0.00009697525,0.00000824597],"study_design_candidate":"observational","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000006417748,0.00008314398,0.7262577,0.00003408049,0.0014315295,0.000032999003,0.00023333883,0.034302503,0.043980703,0.14008209,0.000110789304,0.053444747],"study_design_scores_gemma":[0.0004492988,0.00006355289,0.20068951,0.000014514246,0.00024758582,0.0000045935735,0.0014537184,0.017705783,0.77321154,0.005518627,0.0003070206,0.00033423438],"about_ca_topic_score_codex":0.00006075228,"about_ca_topic_score_gemma":0.00041804113,"teacher_disagreement_score":0.7292309,"about_ca_system_score_codex":0.000021111138,"about_ca_system_score_gemma":0.0000028990898,"threshold_uncertainty_score":0.22526771},"labels":[],"label_agreement":null},{"id":"W2159071878","doi":"10.1109/essderc.2002.194930","title":"Accurate Modelling of Thin-Film Resistor up to 40 GHz","year":2002,"lang":"en","type":"article","venue":"","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":10,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Nanowave Technologies (Canada); McMaster University","funders":"","keywords":"Resistor; Capacitance; Resistive touchscreen; Materials science; Microstrip; Electrical engineering; Optoelectronics; Capacitor; Electronic engineering; Voltage; Engineering; Physics; Electrode","score_opus":0.05107943256861517,"score_gpt":0.21173136512643775,"score_spread":0.1606519325578226,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2159071878","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.34676158,0.0011177451,0.50648063,0.00036822705,0.0004261923,0.00016930775,0.0000065585864,0.0022120094,0.14245771],"genre_scores_gemma":[0.98400146,0.00011560188,0.010205111,0.000027084821,0.000015055909,0.0000053713243,3.613175e-7,0.000014202461,0.0056157387],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9995655,0.000002349686,0.00013243861,0.00008459957,0.000073065166,0.00014205363],"domain_scores_gemma":[0.99971557,0.000019065663,0.000010560457,0.00021032368,0.000016708786,0.00002777089],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000033629254,0.00007761205,0.00011007475,0.00007268444,0.000018309089,0.0000074860172,0.00014768186,0.00006597071,0.00024114142],"category_scores_gemma":[0.000015830094,0.000067757326,0.000029792769,0.00013174613,0.000013183852,0.000065081345,0.000029622961,0.00007668983,0.00020110128],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000002597282,0.0000049239525,0.0000127614385,0.000026864851,0.000014830683,0.0000015087846,0.00034591559,0.9666065,0.00059933035,0.0021817277,0.028841091,0.0013619424],"study_design_scores_gemma":[0.00007713912,0.000016387035,0.000018182269,0.00001587403,0.0000044795543,7.32196e-7,0.00020493404,0.9693452,0.021319652,0.0006299955,0.008253177,0.00011425688],"about_ca_topic_score_codex":0.000017269296,"about_ca_topic_score_gemma":0.0000052475957,"teacher_disagreement_score":0.6372399,"about_ca_system_score_codex":0.000019095403,"about_ca_system_score_gemma":0.0000014161488,"threshold_uncertainty_score":0.27630636},"labels":[],"label_agreement":null},{"id":"W2159359319","doi":"10.1109/mwsym.2006.249414","title":"Monolithic RF MEMS Switch Matrix Integration","year":2006,"lang":"en","type":"article","venue":"","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":36,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Microelectromechanical systems; Materials science; Interconnection; Crossbar switch; Fabrication; Radio frequency; Clos network; Optoelectronics; Matrix (chemical analysis); Electronic engineering; Electrical engineering; Computer science; Engineering; Telecommunications","score_opus":0.006137921016087577,"score_gpt":0.20414442433410177,"score_spread":0.1980065033180142,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2159359319","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.63130236,0.0006649938,0.17700724,0.00029581058,0.000261091,0.00010721189,0.0000016352532,0.004382364,0.18597731],"genre_scores_gemma":[0.99562764,0.000026771877,0.001954541,0.000007346119,0.000040708408,0.000008607491,0.0000044121184,0.000010339234,0.0023196226],"study_design_codex":"theoretical_or_conceptual","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99968696,8.8378295e-7,0.000092794144,0.00006099436,0.000049712457,0.00010866462],"domain_scores_gemma":[0.9998482,0.000008755117,0.000006234532,0.000117836535,0.00001053042,0.0000084410585],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000028574845,0.00006635412,0.000060534443,0.000051563056,0.000017137228,0.00001867181,0.00006997567,0.000081518214,0.00006981331],"category_scores_gemma":[0.0000057608654,0.000052838546,0.000020307116,0.00009745921,0.000011555545,0.000071324066,0.000010522855,0.00008648773,0.00016810924],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000006931347,0.00007154298,0.006625758,0.00011775299,0.000063672385,0.000018860841,0.0001882063,0.023286805,0.25300854,0.42775643,0.14914024,0.13971527],"study_design_scores_gemma":[0.00038876795,0.000043227108,0.011094748,0.00003189545,0.000016307808,0.000015466745,0.00061536557,0.089543834,0.79103035,0.082550935,0.024145406,0.00052372785],"about_ca_topic_score_codex":0.00013979548,"about_ca_topic_score_gemma":0.000068286085,"teacher_disagreement_score":0.53802174,"about_ca_system_score_codex":0.00002541218,"about_ca_system_score_gemma":0.0000026116743,"threshold_uncertainty_score":0.21607603},"labels":[],"label_agreement":null},{"id":"W2159563595","doi":"10.1149/2.007312jss","title":"Oxygen Plasma and Humidity Dependent Surface Analysis of Silicon, Silicon Dioxide and Glass for Direct Wafer Bonding","year":2013,"lang":"en","type":"article","venue":"ECS Journal of Solid State Science and Technology","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":156,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McMaster University","funders":"","keywords":"Materials science; X-ray photoelectron spectroscopy; Wafer; Silicon; Reactive-ion etching; Silicon dioxide; Oxygen; Anodic bonding; Chemical engineering; Relative humidity; Humidity; Etching (microfabrication); Analytical Chemistry (journal); Nanotechnology; Composite material; Layer (electronics); Chemistry; Optoelectronics; Organic chemistry","score_opus":0.010236346728784184,"score_gpt":0.23833242088052906,"score_spread":0.22809607415174488,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2159563595","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9975277,0.0011849878,0.00038206848,0.0005406416,0.00006878709,0.00012477709,0.000016978496,0.0000734359,0.00008059543],"genre_scores_gemma":[0.9975401,0.0012608168,0.0011383437,0.000005554389,0.0000053450062,0.0000036471788,2.4198386e-7,0.000007970859,0.000037937476],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9989362,0.0000074456952,0.000364788,0.00019240916,0.00018873908,0.0003104279],"domain_scores_gemma":[0.9992064,0.00010438601,0.00015984429,0.00018870748,0.0002637531,0.000076880875],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0005747857,0.0001349382,0.0004456107,0.00090368825,0.000121342986,0.000042679523,0.0003163696,0.000101952886,0.000004335371],"category_scores_gemma":[0.00031839774,0.00010855554,0.000037755435,0.0009928023,0.0008226137,0.00039517196,0.00016857086,0.00018669464,3.950216e-7],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000019467709,0.000035576748,0.049209833,0.000098519806,0.0005858223,0.000015671523,0.00039701475,0.0031900483,0.91714907,0.0012601383,0.00027628252,0.027762564],"study_design_scores_gemma":[0.0007308597,0.0004049633,0.022283603,0.00005172792,0.00028038578,0.00010544806,0.0017757673,0.043877963,0.9199704,0.009480516,0.00073942856,0.0002989169],"about_ca_topic_score_codex":0.000010282866,"about_ca_topic_score_gemma":0.000023419987,"teacher_disagreement_score":0.040687915,"about_ca_system_score_codex":0.000042225034,"about_ca_system_score_gemma":0.0000348199,"threshold_uncertainty_score":0.44267666},"labels":[],"label_agreement":null},{"id":"W2161130272","doi":"10.1109/tcpmt.2011.2177269","title":"Electroless Ni Plating to Compensate for Bump Height Variation in Cu–Cu 3-D Packaging","year":2012,"lang":"en","type":"article","venue":"IEEE Transactions on Components Packaging and Manufacturing Technology","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":19,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"","funders":"University of Waterloo; Nanyang Technological University","keywords":"Materials science; Plating (geology); Microstructure; Shear strength (soil); Metallurgy; Electroless plating; Copper; Contact resistance; Pillar; Copper plating; Composite material; Daisy chain; Flip chip; Layer (electronics); Electroplating; Adhesive; Structural engineering","score_opus":0.014698336928790953,"score_gpt":0.22613634049714756,"score_spread":0.21143800356835663,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2161130272","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.6112799,0.00008191402,0.38614509,0.00046638036,0.00045925996,0.00029580624,0.000010680929,0.0011963168,0.00006465881],"genre_scores_gemma":[0.9926123,0.00006501679,0.006945311,0.000059818,0.000039062885,0.00017951605,0.000004553657,0.00006240971,0.000032014257],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9983707,0.00001962463,0.00034181183,0.00034216896,0.00012360816,0.00080207817],"domain_scores_gemma":[0.999397,0.00010695841,0.000052605326,0.000333002,0.000017517486,0.00009293497],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.00020959057,0.0003218194,0.0003601625,0.0010748042,0.00024944442,0.000041339415,0.00022233214,0.00027109327,0.000006169192],"category_scores_gemma":[0.0000076230103,0.0003440213,0.000054068452,0.00026180522,0.000056783836,0.00021296208,0.000009439748,0.00056892104,0.000018345221],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00027309253,0.00071895134,0.0077241277,0.0007837787,0.00063330523,0.00002596687,0.0035885875,0.10661437,0.50487506,0.0036965113,0.0003176953,0.37074852],"study_design_scores_gemma":[0.0020295756,0.00017688329,0.015623703,0.00036791523,0.00007880344,0.00008159592,0.0005225389,0.033027984,0.9418322,0.003323107,0.001886099,0.001049604],"about_ca_topic_score_codex":0.000049156293,"about_ca_topic_score_gemma":0.00004673467,"teacher_disagreement_score":0.43695712,"about_ca_system_score_codex":0.00016862142,"about_ca_system_score_gemma":0.000006522564,"threshold_uncertainty_score":0.9999012},"labels":[],"label_agreement":null},{"id":"W2163564743","doi":"10.1109/isqed.2013.6523596","title":"Vertically-addressed test structures (VATS) for 3D IC variability and stress measurements","year":2013,"lang":"en","type":"article","venue":"","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Integrated circuit; Three-dimensional integrated circuit; Through-silicon via; Chip; Electronic engineering; Materials science; Computer science; Electronic circuit; Process (computing); Embedded system; Engineering; Silicon; Optoelectronics; Electrical engineering; Telecommunications","score_opus":0.021198786065296737,"score_gpt":0.21695533583519278,"score_spread":0.19575654976989604,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2163564743","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.90737176,0.00018492574,0.07662685,0.0002658251,0.0002602456,0.0010729437,0.000060021914,0.0018155698,0.012341864],"genre_scores_gemma":[0.9839196,0.0000088222505,0.015882017,0.000025173176,0.00001871999,0.00007900738,0.000004037513,0.000014179326,0.000048427515],"study_design_codex":"observational","study_design_gemma":"observational","domain_scores_codex":[0.99940795,0.000005451841,0.00013442848,0.00014894542,0.000093736766,0.00020951607],"domain_scores_gemma":[0.999524,0.0001548163,0.000008969106,0.00021249335,0.00005501827,0.000044726534],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00007439167,0.00011692291,0.00012567361,0.000027986029,0.000042486852,0.000046911504,0.00011630535,0.000102441234,0.00021671617],"category_scores_gemma":[0.0003668268,0.00009061978,0.000019630561,0.000050358278,0.000057546422,0.00010618366,0.000036799524,0.00007594606,0.000010576485],"study_design_candidate":"observational","study_design_consensus":"observational","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00003296977,0.00035093952,0.46296024,0.0020376071,0.00058657257,0.000002657341,0.00038397568,0.0021110813,0.20044297,0.021796215,0.032636315,0.27665845],"study_design_scores_gemma":[0.0022461154,0.00024163187,0.5612007,0.000065201304,0.00010035087,0.000004479421,0.00030787464,0.096268974,0.25081247,0.08563009,0.0020898597,0.0010322556],"about_ca_topic_score_codex":0.000018343713,"about_ca_topic_score_gemma":0.00000789252,"teacher_disagreement_score":0.27562618,"about_ca_system_score_codex":0.000022642691,"about_ca_system_score_gemma":0.0000056970307,"threshold_uncertainty_score":0.36953673},"labels":[],"label_agreement":null},{"id":"W2171651882","doi":"10.1007/978-1-4614-0481-1_8","title":"3D Interconnect Simulation","year":2011,"lang":"en","type":"book-chapter","venue":"","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Crosslight Software (Canada)","funders":"","keywords":"Interconnection; Materials science; Computer science; Computer network","score_opus":0.02902132917322989,"score_gpt":0.2015994296739571,"score_spread":0.17257810050072722,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2171651882","genre_codex":"other","genre_gemma":"other","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"other","genre_consensus":"other","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.000011804459,0.00040144668,0.03085911,0.000005063637,0.00022684222,0.00006507694,0.00000304388,0.0018469035,0.9665807],"genre_scores_gemma":[0.3393673,0.00025973818,0.0009814423,0.000017731201,0.000067148794,0.0000030511387,0.000011701374,0.0000687248,0.65922314],"study_design_codex":"theoretical_or_conceptual","study_design_gemma":"not_applicable","domain_scores_codex":[0.9996595,4.813335e-7,0.000114600254,0.00009649596,0.00004401539,0.000084920524],"domain_scores_gemma":[0.999731,0.000021527387,0.000015025955,0.00020507432,0.000013484735,0.00001387461],"candidate_categories":["insufficient_payload"],"consensus_categories":["insufficient_payload"],"category_scores_codex":[0.000015929008,0.00015359966,0.00013887811,0.00009275971,0.000009237889,0.0000070013266,0.00010338374,0.00031322017,0.002924538],"category_scores_gemma":[0.0000055335563,0.00013667892,0.000049428756,0.0000061373626,0.000022027396,0.000040035415,0.000033507138,0.00018131139,0.0009734526],"study_design_candidate":"not_applicable","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0000023248588,0.0000020925218,0.0000023771984,0.000070484246,0.0001292632,0.0000109054,0.00006378753,0.006247032,0.000011631361,0.6741143,0.003927544,0.3154183],"study_design_scores_gemma":[0.000072327864,0.000031046508,0.000004193205,0.00008567477,0.000029034118,0.000002266613,0.000005721041,0.017936762,0.00029290217,0.09759922,0.8835464,0.000394448],"about_ca_topic_score_codex":0.0000033019344,"about_ca_topic_score_gemma":0.000008376307,"teacher_disagreement_score":0.8796189,"about_ca_system_score_codex":0.00002649908,"about_ca_system_score_gemma":0.0000026058185,"threshold_uncertainty_score":0.9998044},"labels":[],"label_agreement":null},{"id":"W2183114177","doi":"10.1109/test.2015.7342390","title":"A DLL-based test solution for through silicon via (TSV) in 3D-stacked ICs","year":2015,"lang":"en","type":"article","venue":"","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":10,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Windsor","funders":"","keywords":"Spice; Three-dimensional integrated circuit; Through-silicon via; Electronic engineering; Propagation delay; Voltage; Materials science; Computer science; Fault (geology); Process (computing); Integrated circuit; Silicon; Engineering; Electrical engineering; Optoelectronics","score_opus":0.03685612609212981,"score_gpt":0.24750020044765167,"score_spread":0.21064407435552185,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2183114177","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.101327606,0.0002488351,0.8824747,0.00061092107,0.00024946884,0.00044964958,0.000011523122,0.0019592743,0.012668016],"genre_scores_gemma":[0.97790956,0.000007305821,0.021750001,0.000072376,0.000024826299,0.00006274829,0.000013647632,0.000018845361,0.0001406861],"study_design_codex":"not_applicable","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9994617,0.0000035207117,0.00013982957,0.00010871739,0.000068892536,0.0002173257],"domain_scores_gemma":[0.99970496,0.000077719254,0.000013501204,0.0001479163,0.000031246727,0.000024633993],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00008859487,0.000101266014,0.000119464916,0.000054932898,0.000016582708,0.000011825044,0.0000895319,0.00012985349,0.000012018187],"category_scores_gemma":[0.00012469535,0.00009248712,0.000026972146,0.00014880984,0.000030599458,0.00011872988,0.000017186894,0.000087189794,0.00003621425],"study_design_candidate":"simulation_or_modeling","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00031998326,0.0015866909,0.0760036,0.0014861003,0.00022470653,0.00006787123,0.0031806633,0.17182255,0.1499982,0.03550021,0.30817568,0.25163373],"study_design_scores_gemma":[0.0014558857,0.00016799662,0.0007081954,0.000021583764,0.0000088457045,0.0000017078283,0.00020870517,0.9303421,0.04658557,0.005958546,0.014282065,0.00025883762],"about_ca_topic_score_codex":0.000063337255,"about_ca_topic_score_gemma":0.00017336507,"teacher_disagreement_score":0.87658197,"about_ca_system_score_codex":0.000099562116,"about_ca_system_score_gemma":0.000022482316,"threshold_uncertainty_score":0.37715155},"labels":[],"label_agreement":null},{"id":"W2192899966","doi":"10.1149/ma2010-02/27/1750","title":"Characterization of Sequentially Plasma Activated Silicon, Silicon Dioxide and Germanium Surfaces and Bonded Interfaces for Low Temperature Applications","year":2010,"lang":"en","type":"article","venue":"ECS Meeting Abstracts","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McMaster University","funders":"","keywords":"Silicon; Silicon dioxide; Germanium; Materials science; Characterization (materials science); Plasma; Optoelectronics; Nanotechnology; Chemical engineering; Composite material; Engineering","score_opus":0.006176570563571117,"score_gpt":0.2063702302140261,"score_spread":0.20019365965045496,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2192899966","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.998196,0.000055200442,0.000017031403,0.00009240491,0.00012082033,0.00035377292,0.00004233446,0.00034452454,0.0007779157],"genre_scores_gemma":[0.9991628,0.00006130779,0.0005744075,0.0000056668127,0.000041364037,0.000047403366,0.000040203882,0.000026335456,0.00004053899],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9993342,0.000006226361,0.00024867832,0.00018205325,0.00006531787,0.0001635066],"domain_scores_gemma":[0.9995292,0.00011282742,0.00010966539,0.00014657396,0.000060212595,0.000041542597],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00012967827,0.00014893676,0.0001788495,0.000069823145,0.000073124604,0.000054224238,0.0000936136,0.00020815426,0.0000023931962],"category_scores_gemma":[0.0000655833,0.00014526269,0.000018563605,0.000078235054,0.00008306192,0.00017232621,0.00003137578,0.00022442208,0.0000012054896],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000008950273,0.000013512769,0.00026317663,0.00019324965,0.000024906698,3.6928483e-7,0.0001479062,0.00088847877,0.9977015,0.000036551286,0.000012492145,0.00070890615],"study_design_scores_gemma":[0.0002144753,0.000018397279,0.012435717,0.00006143593,0.0000152336,0.0000063354064,0.00008607822,0.0010776616,0.9853624,0.00005443434,0.0005276929,0.00014014152],"about_ca_topic_score_codex":0.000009022565,"about_ca_topic_score_gemma":0.000023231289,"teacher_disagreement_score":0.012339103,"about_ca_system_score_codex":0.000008030394,"about_ca_system_score_gemma":0.000012078185,"threshold_uncertainty_score":0.5923641},"labels":[],"label_agreement":null},{"id":"W2196069668","doi":"10.1109/tim.2015.2477240","title":"Contactless Test Access Mechanism for TSV-Based 3-D ICs Utilizing Capacitive Coupling","year":2015,"lang":"en","type":"article","venue":"IEEE Transactions on Instrumentation and Measurement","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":13,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Windsor","funders":"CMC Microsystems","keywords":"Through-silicon via; Capacitive coupling; Capacitive sensing; Materials science; Electronic engineering; Three-dimensional integrated circuit; CMOS; Integrated circuit; Insertion loss; Coupling (piping); Wafer; Optoelectronics; Signal integrity; Electrical engineering; Engineering; Printed circuit board; Voltage","score_opus":0.11955984703263323,"score_gpt":0.28421630104239215,"score_spread":0.16465645400975892,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2196069668","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.116225205,0.000026590384,0.8817016,0.00013635657,0.0006625593,0.00047195543,0.000050285864,0.0003748808,0.00035055025],"genre_scores_gemma":[0.998011,0.00004274777,0.0015273084,0.00011650298,0.000014925826,0.00024872881,0.000005036435,0.000023505592,0.000010238484],"study_design_codex":"design_other","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99918556,0.0000060526754,0.00019397053,0.00016004483,0.00027709492,0.0001772619],"domain_scores_gemma":[0.9995519,0.000042687017,0.000035630008,0.00009183196,0.00019274955,0.00008522458],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00018449588,0.0001528752,0.00013274461,0.00013323143,0.00013715638,0.00007245992,0.000073385796,0.00007989131,0.000009651688],"category_scores_gemma":[0.000013037644,0.00015630801,0.000040885865,0.00010321366,0.000034651373,0.00019475361,6.513973e-7,0.00011812449,0.0000036473423],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0006183295,0.0012062037,0.0007770855,0.0012256148,0.00094673474,0.0000103020075,0.004233191,0.37072596,0.22613178,0.01230276,0.0012764472,0.3805456],"study_design_scores_gemma":[0.0022927176,0.00021721306,0.000049951683,0.00009653064,0.00006754521,0.0000020698474,0.002864439,0.16378321,0.82953906,0.0006940976,0.00016064076,0.00023253831],"about_ca_topic_score_codex":0.00002271678,"about_ca_topic_score_gemma":0.00008288862,"teacher_disagreement_score":0.8817858,"about_ca_system_score_codex":0.0002720411,"about_ca_system_score_gemma":0.000051899828,"threshold_uncertainty_score":0.6374056},"labels":[],"label_agreement":null},{"id":"W2204753321","doi":"10.1149/06906.0079ecst","title":"Combined Surface-Activated Bonding Technique for Low-Temperature Cu/SiO<sub>2</sub> Hybrid Bonding","year":2015,"lang":"en","type":"article","venue":"ECS Transactions","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":7,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Optech (Canada)","funders":"","keywords":"Anodic bonding; Direct bonding; Chemisorption; Materials science; Wafer bonding; Wafer; Thermocompression bonding; Ion; Bond energy; Composite material; Chemistry; Adsorption; Nanotechnology; Layer (electronics); Molecule; Physical chemistry","score_opus":0.014080071254063305,"score_gpt":0.21773227413115914,"score_spread":0.20365220287709584,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2204753321","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.7982907,0.00014371952,0.19632918,0.0003114732,0.0006785962,0.00072880136,0.000106301566,0.002722188,0.00068901933],"genre_scores_gemma":[0.99518436,0.000045502344,0.0041086306,0.000015258185,0.00004343181,0.00023770727,0.000043262666,0.000091953654,0.0002299114],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99885625,0.000015411872,0.00027239416,0.00026201617,0.00015370695,0.00044025067],"domain_scores_gemma":[0.99936,0.00007597702,0.000037121095,0.00031098566,0.000084775114,0.00013112344],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.00016123714,0.00028459166,0.00029334263,0.00019705875,0.0002257064,0.000067295034,0.00019530272,0.00026156064,0.000012729281],"category_scores_gemma":[0.00003113197,0.00029866752,0.00013701867,0.0004609067,0.000059402017,0.00033485517,0.000008024807,0.0005192158,0.00002206249],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00002347483,0.000045303575,0.000015806361,0.000071494906,0.00007176345,0.00000883576,0.00009819453,0.012082282,0.9822265,0.0004372611,0.00447171,0.00044740198],"study_design_scores_gemma":[0.000666439,0.00008051904,0.000023693485,0.00008617208,0.000040822615,0.000029782808,0.00025647914,0.0024140906,0.9906342,0.0010138004,0.004400181,0.00035381233],"about_ca_topic_score_codex":0.000007090634,"about_ca_topic_score_gemma":0.000008650957,"teacher_disagreement_score":0.19689362,"about_ca_system_score_codex":0.00020281525,"about_ca_system_score_gemma":0.000043779593,"threshold_uncertainty_score":0.99994653},"labels":[],"label_agreement":null},{"id":"W2223362452","doi":"10.1149/06906.0091ecst","title":"Electrografted P4VP as Dielectric in High Aspect Ratio TSV: Surface Preparation and Thermomechanical Consideration","year":2015,"lang":"en","type":"article","venue":"ECS Transactions","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":5,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Institut National de la Recherche Scientifique; Université de Sherbrooke","funders":"Natural Sciences and Engineering Research Council of Canada; Institut national de la recherche scientifique; Université de Sherbrooke","keywords":"Materials science; Through-silicon via; Dielectric; Silicon; Substrate (aquarium); Conformal map; Deposition (geology); Composite material; Layer (electronics); Microsystem; Aqueous solution; Optoelectronics; Nanotechnology; Organic chemistry","score_opus":0.012351697783427084,"score_gpt":0.22873439280359759,"score_spread":0.2163826950201705,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2223362452","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.85019004,0.0006519277,0.14632465,0.00031498642,0.000116018215,0.00024883938,0.0000026811656,0.0006739256,0.0014769256],"genre_scores_gemma":[0.9987784,0.00015607727,0.0008915518,0.000012500832,0.000013617214,0.00003414553,0.0000071636578,0.000015655842,0.0000908689],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9994012,0.000026735794,0.00016038497,0.00014134856,0.00009323097,0.00017711632],"domain_scores_gemma":[0.999748,0.000049164737,0.000014382965,0.000114317445,0.000029248467,0.000044916153],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00010063519,0.00010865061,0.00012315717,0.000099859484,0.00005391111,0.000041230032,0.00004094693,0.00012376867,0.000032303742],"category_scores_gemma":[0.000024996705,0.00011122125,0.000020748916,0.00033980535,0.000022941123,0.00019833597,0.0000018087981,0.00020545926,0.000020930598],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00037625403,0.00058972463,0.0012590842,0.0001044412,0.0005458667,0.00006754911,0.005111956,0.5534666,0.340609,0.058236424,0.0026170718,0.03701597],"study_design_scores_gemma":[0.0028683546,0.0010252057,0.0035767993,0.00003502751,0.00012892313,0.0001343866,0.0005902653,0.5264064,0.42115417,0.041665304,0.0015857187,0.00082945044],"about_ca_topic_score_codex":0.00010101934,"about_ca_topic_score_gemma":0.0005457439,"teacher_disagreement_score":0.14858837,"about_ca_system_score_codex":0.00008974798,"about_ca_system_score_gemma":0.000040749605,"threshold_uncertainty_score":0.4535471},"labels":[],"label_agreement":null},{"id":"W2241970807","doi":"10.4071/isom-2010-wp4-paper4","title":"Wire Bonding UPH and Stitch Bond Improvement using 20 Micron Diameter Insulated Wire with Security Bump","year":2010,"lang":"en","type":"article","venue":"IMAPSource Proceedings","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Wire bonding; Materials science; Bond; Microelectronics; Ball (mathematics); Composite material; Structural engineering; Mechanical engineering; Chip; Electrical engineering; Optoelectronics; Engineering","score_opus":0.004842394910519718,"score_gpt":0.18892314666146767,"score_spread":0.18408075175094796,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2241970807","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99697655,0.00021146613,0.0002130601,0.00016376565,0.00012226691,0.00031172705,0.000011078564,0.00093351636,0.0010565538],"genre_scores_gemma":[0.99489534,0.00001549387,0.0047881287,0.000045117282,0.000078920755,0.000014926145,0.0000042231673,0.0000747028,0.00008312889],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9987349,0.0000011524869,0.00023224506,0.00036416858,0.00018440247,0.0004831635],"domain_scores_gemma":[0.99956596,0.0000150463,0.00007677939,0.0001482259,0.00008776046,0.00010624135],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.00012567584,0.0003246857,0.0002719397,0.00017217292,0.00016110609,0.00017603484,0.00019585277,0.00024038016,0.0000136830495],"category_scores_gemma":[0.00003343419,0.00028383182,0.00003646568,0.00030177596,0.00017883719,0.00038936784,0.0001383977,0.0006320113,0.00000512867],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000019417568,0.000028882114,0.028535832,0.00029646556,0.00007550673,0.000007494055,0.001983788,0.000022213108,0.96357805,0.0004551749,0.00077697326,0.004220222],"study_design_scores_gemma":[0.003007091,0.00051285943,0.0069340165,0.0006233959,0.00025741762,0.00032812043,0.0056601632,0.066436484,0.88665324,0.0027748912,0.024555169,0.0022571692],"about_ca_topic_score_codex":0.000041774663,"about_ca_topic_score_gemma":0.000013601981,"teacher_disagreement_score":0.07692481,"about_ca_system_score_codex":0.000066473825,"about_ca_system_score_gemma":0.0000139389795,"threshold_uncertainty_score":0.9999614},"labels":[],"label_agreement":null},{"id":"W2247983858","doi":"10.4071/2011dpc-tp14","title":"A Novel Approach to 3D Chip Stacking","year":2011,"lang":"en","type":"article","venue":"Additional Conferences (Device Packaging HiTEC HiTEN & CICMT)","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"ON Semiconductor (Canada)","funders":"","keywords":"Application-specific integrated circuit; Flexibility (engineering); System in package; Die (integrated circuit); Miniaturization; Three-dimensional integrated circuit; Integrated circuit; Interposer; Chip; Embedded system; Computer science; Package on package; Integrated circuit packaging; Chip-scale package; Interconnection; System on a chip; Stacking; Electronic engineering; Engineering; Electrical engineering; Nanotechnology; Materials science; Telecommunications; Layer (electronics); Operating system","score_opus":0.05978361744578992,"score_gpt":0.224049136916589,"score_spread":0.1642655194707991,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2247983858","genre_codex":"other","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.02515669,0.00059345446,0.16774087,0.00042530792,0.0005629115,0.0006738929,0.0029314258,0.0042856527,0.7976298],"genre_scores_gemma":[0.9192817,0.000023318928,0.07892852,0.0005323081,0.00015641576,0.00018021937,0.00063948747,0.00006266116,0.00019532705],"study_design_codex":"theoretical_or_conceptual","study_design_gemma":"not_applicable","domain_scores_codex":[0.9980192,0.000023428933,0.00040139043,0.0005016424,0.00043383235,0.0006204788],"domain_scores_gemma":[0.9989293,0.0001650571,0.0000765038,0.0004411853,0.00020113515,0.00018676787],"candidate_categories":["metaepi_narrow","insufficient_payload"],"consensus_categories":[],"category_scores_codex":[0.00017857099,0.00040178047,0.00035545486,0.00037875088,0.00019439613,0.00011033357,0.0006597866,0.00018710631,0.0024025],"category_scores_gemma":[0.00015911956,0.00039356443,0.000105632535,0.00058723544,0.00015324188,0.00036686633,0.00015189736,0.00043319497,0.00050000433],"study_design_candidate":"not_applicable","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00019776884,0.0018412794,0.0054558846,0.001204615,0.0023331689,0.00017873997,0.02324719,0.009267188,0.011244751,0.46365705,0.15743287,0.3239395],"study_design_scores_gemma":[0.0026518602,0.00059238024,0.070123255,0.0018554586,0.00042919215,0.0007786297,0.019505246,0.04633685,0.0069500487,0.016193207,0.8282848,0.006299086],"about_ca_topic_score_codex":0.00011036181,"about_ca_topic_score_gemma":0.000030394722,"teacher_disagreement_score":0.89412504,"about_ca_system_score_codex":0.000092165064,"about_ca_system_score_gemma":0.00008454049,"threshold_uncertainty_score":0.99985164},"labels":[],"label_agreement":null},{"id":"W2271075967","doi":"10.4071/isom-2013-ta26","title":"Moisture and Hydrogen Release in Optoelectronic Hermetic Packages","year":2013,"lang":"en","type":"article","venue":"IMAPSource Proceedings","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Semtech (Canada)","funders":"","keywords":"Moisture; Plating (geology); Materials science; Electroless plating; Hydrogen; Nickel; Electrolyte; Water content; Chemical engineering; Metallurgy; Composite material; Chemistry; Electroplating; Physical chemistry; Electrode; Engineering; Organic chemistry","score_opus":0.0024648034083890637,"score_gpt":0.16177398565530185,"score_spread":0.1593091822469128,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2271075967","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.991641,0.0022594628,0.000023692137,0.00042165755,0.000013202074,0.00020297807,6.573064e-7,0.000687741,0.004749651],"genre_scores_gemma":[0.99893636,0.00029492629,0.00036009986,0.000047717203,0.000026538326,0.00007998173,0.0000010052861,0.000033600554,0.00021979825],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9992274,0.0000015583029,0.00013956135,0.00018440536,0.000086701184,0.0003603925],"domain_scores_gemma":[0.99981,0.000012773204,0.000019467774,0.000075183954,0.00002545846,0.00005715248],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000054274602,0.00016182732,0.00015945223,0.00012788619,0.000032551943,0.00006475482,0.00014483611,0.00012707873,0.00003274148],"category_scores_gemma":[0.000046977777,0.0001500867,0.000023276609,0.00023369364,0.00006541199,0.00021732236,0.000052048174,0.00028468817,0.000066973495],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000031632288,0.00018797192,0.28448108,0.0018002494,0.00026029738,0.000044418233,0.008595332,0.0017628053,0.41280848,0.00760445,0.04335764,0.23906563],"study_design_scores_gemma":[0.0054297824,0.00083445234,0.32755756,0.0009282812,0.00017399622,0.00059259555,0.014781553,0.13585524,0.36736345,0.082775034,0.05899235,0.004715691],"about_ca_topic_score_codex":0.000039587747,"about_ca_topic_score_gemma":0.0000036963447,"teacher_disagreement_score":0.23434995,"about_ca_system_score_codex":0.00005652809,"about_ca_system_score_gemma":0.0000051100433,"threshold_uncertainty_score":0.6120358},"labels":[],"label_agreement":null},{"id":"W2288475183","doi":"10.1007/978-1-4419-8606-1_40","title":"Theoretical and Experimental Study of the Acoustic Nonlinearities at an Interface with Poor Adhesive Bonding","year":2002,"lang":"en","type":"book-chapter","venue":"Acoustical imaging","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":4,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Windsor","funders":"","keywords":"Adhesive; Ultrasonic sensor; Acoustics; Nonlinear system; Reflection (computer programming); Materials science; Distortion (music); Harmonic; Computer science; Composite material; Physics; Layer (electronics); Optoelectronics","score_opus":0.009223004729250365,"score_gpt":0.22767489905240915,"score_spread":0.21845189432315879,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2288475183","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.7138959,0.007140358,0.013989715,0.00036939708,0.00089637033,0.0025068794,0.00017050926,0.0021507589,0.2588801],"genre_scores_gemma":[0.9953326,0.000025633615,0.0005189408,0.000025696929,0.0000570354,0.000012696698,0.0000021203432,0.000098234,0.003927065],"study_design_codex":"theoretical_or_conceptual","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99885,0.000013426582,0.00026961492,0.0003160034,0.000272659,0.0002783043],"domain_scores_gemma":[0.99930876,0.00015936831,0.00005286709,0.0003701593,0.00003907099,0.000069780945],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.00005497502,0.00037178086,0.00039454876,0.00008506467,0.0001111225,0.000046426318,0.00027550588,0.00014193587,0.00025523352],"category_scores_gemma":[0.00003590257,0.00025462048,0.00004620357,0.000031070053,0.001011258,0.00009964235,0.0003676988,0.00053232635,0.0000063652033],"study_design_candidate":"simulation_or_modeling","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0010285556,0.0036542185,0.004986139,0.0031818121,0.004268407,0.00251982,0.02884059,0.034709796,0.1420264,0.73717386,0.008447944,0.029162468],"study_design_scores_gemma":[0.0036001613,0.0028428924,0.00027542099,0.0022864603,0.0021313522,0.0009214051,0.032709364,0.8935458,0.04451439,0.013239515,0.00083220936,0.0031009968],"about_ca_topic_score_codex":0.000003802174,"about_ca_topic_score_gemma":0.0000039589586,"teacher_disagreement_score":0.85883605,"about_ca_system_score_codex":0.00010775384,"about_ca_system_score_gemma":0.000007826042,"threshold_uncertainty_score":0.9999906},"labels":[],"label_agreement":null},{"id":"W2298091904","doi":"10.1149/ma2014-02/34/1741","title":"Materials Issues in Hermetic Wafer Level Packaging Using Au Thermocompression and Au-Sn Transient Liquid Phase Bonding","year":2014,"lang":"en","type":"article","venue":"ECS Meeting Abstracts","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Dalsa Corporation; Université de Montréal; Polytechnique Montréal","funders":"","keywords":"Materials science; Wafer bonding; Wafer; Tin; Thermocompression bonding; Anodic bonding; Wafer-level packaging; Context (archaeology); Nanotechnology; Diffusion bonding; Optoelectronics; Layer (electronics); Mechanical engineering; Composite material; Metallurgy; Engineering","score_opus":0.03194863733589564,"score_gpt":0.27639288616541124,"score_spread":0.2444442488295156,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2298091904","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99286294,0.00026351385,0.000180781,0.00012650456,0.00032747255,0.00014636744,0.0000052574087,0.00039217877,0.0056950045],"genre_scores_gemma":[0.9976953,0.000025595973,0.0020414642,0.000011699495,0.00013517789,0.000008040541,0.0000039400884,0.00004969928,0.000029077604],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9986986,0.000045286673,0.00039845874,0.00024281483,0.00014317661,0.00047167134],"domain_scores_gemma":[0.9995403,0.0001076077,0.00007204998,0.00019749613,0.000014582162,0.00006790902],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000640365,0.0002313305,0.00030159706,0.00017310705,0.00012234242,0.000068961985,0.00012975436,0.00014929414,0.00001234058],"category_scores_gemma":[0.00013866904,0.00021556538,0.000027769427,0.00010955942,0.000057290006,0.00016257675,0.00004851368,0.00019531572,0.0000075731796],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000019747897,0.00003028353,0.0003226309,0.000161359,0.000011805387,0.000014963925,0.0015581041,0.023846906,0.9713841,0.000020065623,0.000024806495,0.0026052084],"study_design_scores_gemma":[0.000767694,0.000055612258,0.007872722,0.0010469867,0.000019019808,0.000015442196,0.0004452092,0.008429225,0.98011583,0.00017620748,0.0007289813,0.00032708878],"about_ca_topic_score_codex":0.00037987332,"about_ca_topic_score_gemma":0.000030069326,"teacher_disagreement_score":0.015417682,"about_ca_system_score_codex":0.00011759207,"about_ca_system_score_gemma":0.000016853919,"threshold_uncertainty_score":0.87905014},"labels":[],"label_agreement":null},{"id":"W2303696326","doi":"10.1109/tcad.2015.2474411","title":"TSV Extracted Equivalent Circuit Model and an On-Chip Test Solution","year":2015,"lang":"en","type":"article","venue":"IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":37,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Windsor","funders":"Natural Sciences and Engineering Research Council of Canada; CMC Microsystems","keywords":"Parametric statistics; Through-silicon via; Equivalent circuit; Electronic engineering; Chip; Void (composites); Parametric model; Electronic circuit; Realization (probability); Integrated circuit; Testability; Computer science; Circuit extraction; Engineering; Materials science; Reliability engineering; Electrical engineering","score_opus":0.08736034808519404,"score_gpt":0.24822835143823585,"score_spread":0.1608680033530418,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2303696326","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.09786827,0.0003239419,0.8996861,0.00001271978,0.00063666794,0.0004396482,0.00007315122,0.00069694757,0.00026257144],"genre_scores_gemma":[0.99870026,0.00014086654,0.0009240924,0.000015495318,0.000045875,0.000052026957,0.000007059209,0.0000456434,0.00006869611],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9984673,0.0000881251,0.00050051673,0.00036505537,0.00026585365,0.00031312564],"domain_scores_gemma":[0.99896634,0.0001978578,0.00008762647,0.00036017562,0.00018562056,0.00020237762],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.00033759358,0.00034069453,0.00044858188,0.0003641662,0.00010986007,0.00010653968,0.00018627367,0.00028810883,0.0000028019244],"category_scores_gemma":[0.000012062814,0.0002991549,0.000053028492,0.00026790472,0.000107486914,0.00025391937,0.0000016661317,0.0003967596,0.0000068502954],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000023565017,0.00024420067,0.000016108279,0.000118293814,0.00011048457,0.000010755035,0.00055421324,0.9084819,0.02923814,0.00064637285,0.00039013574,0.06016585],"study_design_scores_gemma":[0.0007330776,0.0010627978,0.000042206066,0.00030595966,0.00004442892,0.00007171151,0.00035002778,0.988736,0.007919132,0.00038857953,0.000027007925,0.00031911212],"about_ca_topic_score_codex":0.00008980358,"about_ca_topic_score_gemma":0.000007930457,"teacher_disagreement_score":0.900832,"about_ca_system_score_codex":0.00013255734,"about_ca_system_score_gemma":0.00007234916,"threshold_uncertainty_score":0.99994606},"labels":[],"label_agreement":null},{"id":"W2319599348","doi":"10.1109/tcpmt.2014.2377375","title":"Capacitance and Conductance of Through Silicon Vias With Consideration of Multilayer Media and Different Shapes","year":2015,"lang":"en","type":"article","venue":"IEEE Transactions on Components Packaging and Manufacturing Technology","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":12,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Capacitance; Conductance; Materials science; RADIUS; Silicon; Optoelectronics; Acoustics; Optics; Physics; Condensed matter physics; Computer science; Electrode","score_opus":0.03071623851263045,"score_gpt":0.21965879630738344,"score_spread":0.188942557794753,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2319599348","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9408581,0.0005728122,0.057779446,0.00018436932,0.00009314127,0.0001252802,0.000015382651,0.00033476707,0.000036661677],"genre_scores_gemma":[0.99710715,0.00045985534,0.0023854482,0.000007743214,0.000003381427,0.0000146627535,8.257493e-7,0.000016526872,0.0000043857276],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9993561,0.0000100953475,0.00018935527,0.0001961617,0.00009301821,0.0001552605],"domain_scores_gemma":[0.9996515,0.0000780034,0.000055580105,0.00015187646,0.00002651736,0.00003651765],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00003737955,0.00017544621,0.00029532096,0.00019525937,0.00005418278,0.000009320333,0.00006166986,0.000137164,0.0000019522377],"category_scores_gemma":[0.000005498708,0.00014623586,0.000013358977,0.00005683224,0.0004242963,0.00011030566,0.000003401601,0.00022100631,2.9642598e-7],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00044197278,0.00047496165,0.008015709,0.0014952464,0.00096164725,0.000045375727,0.009180402,0.01925009,0.8476061,0.0036704075,0.00013758762,0.10872047],"study_design_scores_gemma":[0.00088557764,0.00012520811,0.0020902362,0.00015133349,0.000034606273,0.000054718697,0.00078647275,0.002647375,0.98985606,0.003171382,0.000031889955,0.00016512454],"about_ca_topic_score_codex":0.000029727853,"about_ca_topic_score_gemma":0.0000552521,"teacher_disagreement_score":0.14224994,"about_ca_system_score_codex":0.000018323664,"about_ca_system_score_gemma":0.0000047523527,"threshold_uncertainty_score":0.59633255},"labels":[],"label_agreement":null},{"id":"W2324019639","doi":"10.1109/tcpmt.2014.2375635","title":"Thermomechanical Characteristics of Copper Through-Silicon via Structures","year":2015,"lang":"en","type":"article","venue":"IEEE Transactions on Components Packaging and Manufacturing Technology","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":8,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Saskatchewan","funders":"Natural Sciences and Engineering Research Council of Canada; Canada Research Chairs; Cisco Systems","keywords":"Materials science; Electron backscatter diffraction; Misorientation; Copper; Wafer; Finite element method; Through-silicon via; Residual stress; Composite material; Silicon; Metallurgy; Substrate (aquarium); Optoelectronics; Electronic engineering; Microstructure; Structural engineering","score_opus":0.022297799716071976,"score_gpt":0.2280479209746731,"score_spread":0.20575012125860112,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2324019639","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.7430887,0.00009464367,0.25473204,0.00017331332,0.0004914721,0.00010536825,0.00001603596,0.0011515436,0.00014683709],"genre_scores_gemma":[0.9981608,0.00013949604,0.0015855854,0.00002332872,0.00001432551,0.000017420309,0.0000027697197,0.00003575605,0.000020559943],"study_design_codex":"design_other","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9990667,0.000013994474,0.00026496634,0.00023062142,0.00013580236,0.0002878985],"domain_scores_gemma":[0.9994679,0.000036160138,0.000051285653,0.00036343795,0.000023305616,0.000057876296],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00006181098,0.00023298798,0.00033472755,0.00029743352,0.00007766257,0.000014196546,0.00022041303,0.00028510543,0.000011109265],"category_scores_gemma":[0.0000041443564,0.00021523927,0.000049059552,0.00010645606,0.00019664086,0.0000860008,0.000007995216,0.00045248546,0.000010722484],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00019492905,0.00036278917,0.0006717442,0.00041948337,0.00073313486,0.00006443693,0.0010097354,0.007413756,0.24930921,0.0031431026,0.00063622574,0.7360414],"study_design_scores_gemma":[0.000684716,0.00015539191,0.0008177644,0.00006211254,0.00004524993,0.00008349759,0.00022478997,0.0029376813,0.98061836,0.013038916,0.0010203065,0.00031118863],"about_ca_topic_score_codex":0.000030063904,"about_ca_topic_score_gemma":0.0000042621746,"teacher_disagreement_score":0.73573023,"about_ca_system_score_codex":0.000049024475,"about_ca_system_score_gemma":0.0000074270592,"threshold_uncertainty_score":0.87772024},"labels":[],"label_agreement":null},{"id":"W2324585205","doi":"10.1149/06405.0083ecst","title":"Combined Surface-Activated Bonding (SAB) Technologies for New Approach to Low Temperature Wafer Bonding","year":2014,"lang":"en","type":"article","venue":"ECS Transactions","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":3,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Optech (Canada)","funders":"","keywords":"Anodic bonding; Wafer; Materials science; Wafer bonding; Plasma activation; Annealing (glass); Void (composites); Thermocompression bonding; Adhesive bonding; Surface modification; Direct bonding; Adhesive; Composite material; Nanotechnology; Chemistry; Plasma; Physical chemistry; Layer (electronics)","score_opus":0.013426705720399548,"score_gpt":0.2136986829975583,"score_spread":0.20027197727715873,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2324585205","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.22162914,0.00011718587,0.7603142,0.0020239332,0.0006253853,0.0008499425,0.000041167816,0.008534336,0.005864658],"genre_scores_gemma":[0.9653206,0.000017560067,0.031198442,0.000021036323,0.000032993314,0.00009994912,0.000016965436,0.00006585452,0.0032266288],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99893117,0.0000085462725,0.00021478346,0.00030014128,0.000112346796,0.00043303953],"domain_scores_gemma":[0.99939626,0.00008990724,0.000022000026,0.00038429105,0.00003307406,0.00007444514],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.000097494565,0.00026045722,0.00028554277,0.00022552359,0.0002509669,0.00008017945,0.00028630038,0.00035863288,0.00002094239],"category_scores_gemma":[0.000051396655,0.00025249954,0.00010976618,0.0006463914,0.00004557991,0.00020320772,0.0000105325535,0.00041513966,0.000033729306],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00005592826,0.00015393885,0.00007827867,0.0002901408,0.0002751209,0.0000011448279,0.00065280206,0.19302067,0.73719144,0.019533852,0.030497072,0.018249586],"study_design_scores_gemma":[0.0010332591,0.000114433846,0.00010241447,0.00009271627,0.000065971435,0.000008216398,0.0015259909,0.01794702,0.9015873,0.0024182422,0.07443775,0.00066667184],"about_ca_topic_score_codex":0.000010949068,"about_ca_topic_score_gemma":0.0000062659346,"teacher_disagreement_score":0.74369144,"about_ca_system_score_codex":0.00010054692,"about_ca_system_score_gemma":0.000016791333,"threshold_uncertainty_score":0.9999927},"labels":[],"label_agreement":null},{"id":"W2324919773","doi":"10.1149/1.3483522","title":"Surface and Interface Characterization of Sequentially Plasma Activated Silicon, Silicon dioxide and Germanium Wafers for Low Temperature Bonding Applications","year":2010,"lang":"en","type":"article","venue":"ECS Transactions","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":20,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McMaster University","funders":"","keywords":"Germanium; Wafer; Materials science; Silicon; Reactivity (psychology); Surface roughness; Silicon dioxide; Plasma activation; Plasma; Characterization (materials science); Nanotechnology; Analytical Chemistry (journal); Composite material; Chemistry; Optoelectronics","score_opus":0.0058514838570388255,"score_gpt":0.21012419626037623,"score_spread":0.20427271240333741,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2324919773","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.94012153,0.000029740093,0.058639348,0.0001692736,0.00013317715,0.00039361956,0.000121341065,0.00031646455,0.0000754793],"genre_scores_gemma":[0.9987701,0.00009425772,0.0008354111,0.0000039960864,0.0000168301,0.00007008961,0.000026936075,0.000026372947,0.00015599161],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99949557,0.000005202718,0.00016343556,0.00015510414,0.00004580296,0.00013490493],"domain_scores_gemma":[0.9996916,0.000050663173,0.000034381723,0.00014280416,0.000040068287,0.000040471867],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000043734086,0.00012643491,0.00014403599,0.000074709336,0.00010751642,0.00002979474,0.000067119814,0.00017847508,0.000012691632],"category_scores_gemma":[0.0000042354663,0.00013256025,0.000030737512,0.0001360345,0.00008085012,0.0002180608,0.0000046927603,0.00024298986,9.772618e-7],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000008463017,0.000015637364,0.00003635887,0.000106210595,0.000040964347,9.2517915e-8,0.00018568888,0.001014635,0.99657273,0.0003506361,0.000006845738,0.0016617277],"study_design_scores_gemma":[0.00026624053,0.000018298151,0.00091190595,0.000020032345,0.000033419266,0.000008977369,0.00012019208,0.0037032585,0.99272466,0.00003794345,0.0020257796,0.00012931591],"about_ca_topic_score_codex":0.0000038019612,"about_ca_topic_score_gemma":0.000024919364,"teacher_disagreement_score":0.05864856,"about_ca_system_score_codex":0.000015034751,"about_ca_system_score_gemma":0.000012299791,"threshold_uncertainty_score":0.540565},"labels":[],"label_agreement":null},{"id":"W2326912472","doi":"10.1149/1.3096522","title":"High-Speed Cu-TSV for 5:1 iTSV Applications","year":2009,"lang":"en","type":"article","venue":"ECS Transactions","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Mitel (Canada)","funders":"","keywords":"Interconnection; Miniaturization; Through-silicon via; Process integration; Materials science; Three-dimensional integrated circuit; Process (computing); Layer (electronics); Computer science; Electronic engineering; Integrated circuit; Nanotechnology; Silicon; Process engineering; Engineering; Optoelectronics; Telecommunications","score_opus":0.00963057392982635,"score_gpt":0.21494551892553362,"score_spread":0.20531494499570727,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2326912472","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"methods","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.0036032544,0.00026925243,0.9888536,0.00088200707,0.0001599755,0.00035724812,0.00005772814,0.001762489,0.004054496],"genre_scores_gemma":[0.98604727,0.00012560471,0.012986141,0.000037074453,0.000059911494,0.0001458604,0.000012938155,0.000016646822,0.0005685836],"study_design_codex":"design_other","study_design_gemma":"not_applicable","domain_scores_codex":[0.9995493,0.0000018085786,0.000119545366,0.000108039676,0.000049358634,0.00017192881],"domain_scores_gemma":[0.9997082,0.000028139213,0.000009463796,0.0001981066,0.000022174649,0.000033921548],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000024031122,0.000094735755,0.00009870019,0.00007797224,0.0001239833,0.000016955799,0.00011394981,0.00009211932,0.00007119301],"category_scores_gemma":[0.0000024273645,0.000099358476,0.0000681563,0.00019190603,0.000021539794,0.000090500245,6.962787e-7,0.00011821398,0.00007560472],"study_design_candidate":"not_applicable","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000021712372,0.000389701,0.00001970468,0.00013121289,0.0002567987,0.0000024063654,0.000408248,0.24240167,0.05863533,0.08263349,0.022546247,0.5925535],"study_design_scores_gemma":[0.0017753511,0.00021298113,0.002069452,0.000032698732,0.00022428099,0.00002286988,0.00044222974,0.04084621,0.14323065,0.053181022,0.75695485,0.0010073988],"about_ca_topic_score_codex":0.000003819589,"about_ca_topic_score_gemma":0.000008959559,"teacher_disagreement_score":0.982444,"about_ca_system_score_codex":0.000030139592,"about_ca_system_score_gemma":0.000007362985,"threshold_uncertainty_score":0.4051721},"labels":[],"label_agreement":null},{"id":"W2329051939","doi":"10.1088/0268-1242/31/5/055008","title":"On the origins of near-surface stresses in silicon around Cu-filled and CNT-filled through silicon vias","year":2016,"lang":"en","type":"article","venue":"Semiconductor Science and Technology","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":7,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of British Columbia","funders":"Natural Sciences and Engineering Research Council of Canada; Agency for Science, Technology and Research","keywords":"Materials science; Stress (linguistics); Silicon; Composite material; Thermal expansion; Through-silicon via; Raman spectroscopy; Compressive strength; Work (physics); Oxide; Carbon nanotube; Metallurgy; Optics; Mechanical engineering","score_opus":0.016619177402244178,"score_gpt":0.23872651858829547,"score_spread":0.2221073411860513,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2329051939","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99567044,0.0010663114,0.000015724563,0.0018302529,0.00014778554,0.00022703923,0.0000104738365,0.0003687605,0.0006632161],"genre_scores_gemma":[0.9986805,0.0010514094,0.00016586091,0.000036816098,0.000007068504,0.000014589062,2.5422563e-7,0.000013244881,0.00003028462],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9987725,0.0000124146845,0.00023778765,0.00038082703,0.0001884762,0.0004079855],"domain_scores_gemma":[0.999102,0.00024098174,0.000060456896,0.00049043883,0.00007417684,0.00003192065],"candidate_categories":["sts"],"consensus_categories":[],"category_scores_codex":[0.00024988985,0.00019628149,0.00028434553,0.00017114908,0.00013208215,0.000035854086,0.00051450654,0.0002272363,0.000025760262],"category_scores_gemma":[0.000537937,0.00011234993,0.000017747225,0.0010923343,0.0028021426,0.0003260857,0.00018392404,0.00023697002,0.000008587397],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0000062823165,0.000020981812,0.009680658,0.000020268533,0.000012353684,0.0000040165623,0.0001951114,0.000020077518,0.8900594,0.09368422,0.00014913875,0.006147499],"study_design_scores_gemma":[0.00074186234,0.00022554983,0.0014042566,0.00015828156,0.000009592633,0.000026810541,0.0023188954,0.0011227721,0.9576695,0.034069892,0.0019533222,0.00029925245],"about_ca_topic_score_codex":0.000073435585,"about_ca_topic_score_gemma":0.000052845975,"teacher_disagreement_score":0.06761012,"about_ca_system_score_codex":0.00010760081,"about_ca_system_score_gemma":0.0000758047,"threshold_uncertainty_score":0.99991167},"labels":[],"label_agreement":null},{"id":"W2332051722","doi":"10.1149/1.2357070","title":"Sequential Plasma Activated Process for Silicon Direct Bonding","year":2006,"lang":"en","type":"article","venue":"ECS Transactions","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":25,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McMaster University","funders":"McMaster University","keywords":"Plasma activation; Silicon oxide; Silicon; Materials science; Anodic bonding; Ultimate tensile strength; Composite material; Surface roughness; Annealing (glass); High-resolution transmission electron microscopy; Chemistry; Wafer; Plasma; Chemical engineering; Nanotechnology; Transmission electron microscopy; Metallurgy; Silicon nitride","score_opus":0.014499917684435695,"score_gpt":0.2332446222743863,"score_spread":0.2187447045899506,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2332051722","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.80824435,0.00008818143,0.17061198,0.00015136419,0.00049543305,0.00033618583,0.00007875628,0.0031071138,0.016886665],"genre_scores_gemma":[0.9985784,0.000007237525,0.00044128814,0.0000021686974,0.00005093004,0.00012420939,0.0000129337695,0.000028322047,0.0007544526],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9995135,0.0000026997232,0.00011541105,0.000113763475,0.00005650126,0.00019810934],"domain_scores_gemma":[0.99982446,0.000034443805,0.000012230681,0.000092173075,0.00001813082,0.000018556191],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000024528887,0.00010462488,0.000104149505,0.00009076306,0.00012142441,0.000020969006,0.00007243081,0.000101748745,0.00004360986],"category_scores_gemma":[0.000003969645,0.000108502325,0.00006291429,0.00018019222,0.000026040398,0.00014568097,8.950271e-7,0.00011435258,0.00000923881],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00003428175,0.00012206483,0.00010022974,0.00025977043,0.00017851745,0.000004592378,0.00024079133,0.39689994,0.5860776,0.0015075743,0.0020752898,0.0124994125],"study_design_scores_gemma":[0.00034083458,0.000019923573,0.00008225358,0.000015455087,0.000034691802,0.000005305797,0.0001051941,0.021942956,0.96382993,0.00068556436,0.0127722,0.0001657089],"about_ca_topic_score_codex":0.000016852091,"about_ca_topic_score_gemma":0.0000426377,"teacher_disagreement_score":0.37775236,"about_ca_system_score_codex":0.000045660287,"about_ca_system_score_gemma":0.000010513902,"threshold_uncertainty_score":0.44245964},"labels":[],"label_agreement":null},{"id":"W2344622367","doi":"10.1109/tvlsi.2015.2496312","title":"A Mismatch-Insensitive Skew Compensation Architecture for Clock Synchronization in 3-D ICs","year":2015,"lang":"en","type":"article","venue":"IEEE Transactions on Very Large Scale Integration (VLSI) Systems","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":11,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Dalhousie University","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Jitter; Clock skew; Skew; Computer science; Electronic engineering; Network topology; Synchronization (alternating current); Clock domain crossing; Compensation (psychology); CMOS; Static timing analysis; Topology (electrical circuits); Clock signal; Detector; Synchronous circuit; Engineering; Electrical engineering; Telecommunications","score_opus":0.016652803934136966,"score_gpt":0.2273678569011584,"score_spread":0.21071505296702145,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2344622367","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.062174484,0.00017454308,0.9332147,0.00013743901,0.0018916505,0.0009823854,0.00019076036,0.0007677147,0.00046630407],"genre_scores_gemma":[0.99748635,0.00003694014,0.0016486469,0.000034729896,0.0000988192,0.00030145375,0.00009112565,0.000054112374,0.00024783987],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99852985,0.000084602216,0.00049175846,0.00029483184,0.00027229913,0.0003266819],"domain_scores_gemma":[0.9992292,0.00012206203,0.0000776212,0.00025905756,0.00022641332,0.00008562547],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.0003047352,0.00028139525,0.0003391795,0.00040940774,0.00012056777,0.00008809457,0.00012302166,0.00033360766,0.0000068318345],"category_scores_gemma":[0.00002205937,0.00027063815,0.00010825773,0.0004660341,0.000043349908,0.00026128313,0.0000012209892,0.00038421314,0.00004771277],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00013463941,0.00022599356,0.000056552344,0.00024199212,0.000092041184,0.0000072426674,0.004109933,0.97146183,0.0031071433,0.0012082855,0.0020314718,0.017322859],"study_design_scores_gemma":[0.0016447805,0.00022276964,0.00006905185,0.0004050895,0.000045681572,0.00003926556,0.0056160437,0.9587127,0.029480673,0.0005422339,0.0027733878,0.00044835478],"about_ca_topic_score_codex":0.000091864014,"about_ca_topic_score_gemma":0.0012652372,"teacher_disagreement_score":0.93531185,"about_ca_system_score_codex":0.0004876933,"about_ca_system_score_gemma":0.00006240642,"threshold_uncertainty_score":0.9999746},"labels":[],"label_agreement":null},{"id":"W2359295852","doi":"10.1149/2.0321606jss","title":"Electrografted P4VP for High Aspect Ratio Copper TSV Insulation in Via-Last Process Flow","year":2016,"lang":"en","type":"article","venue":"ECS Journal of Solid State Science and Technology","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":10,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Institut interdisciplinaire d'innovation technologique; Université de Sherbrooke","funders":"Natural Sciences and Engineering Research Council of Canada; Université de Sherbrooke","keywords":"Materials science; Through-silicon via; Die (integrated circuit); Copper; Flow (mathematics); Conformal map; Optoelectronics; Process (computing); Aspect ratio (aeronautics); Deposition (geology); Electronic engineering; Silicon; Mechanical engineering; Nanotechnology; Metallurgy; Computer science; Engineering","score_opus":0.0059423635481181255,"score_gpt":0.23722217088308678,"score_spread":0.23127980733496867,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2359295852","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.96735364,0.00029326824,0.030453658,0.0014180348,0.00013617387,0.00014147439,0.000005111731,0.00015390877,0.000044719523],"genre_scores_gemma":[0.9975352,0.00034180933,0.0020629873,0.000009536373,0.000018031467,0.000011545298,2.1607607e-7,0.000009717415,0.000010907385],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9990319,0.000004109919,0.00030450747,0.00013983647,0.00017930509,0.00034034005],"domain_scores_gemma":[0.99940735,0.00003263371,0.00009572832,0.000107527216,0.00031997138,0.000036759513],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00038479725,0.00010600072,0.00020131031,0.0009327268,0.00008021354,0.00002284192,0.00028562243,0.00009046198,0.0000029565997],"category_scores_gemma":[0.00023877723,0.00007187411,0.000016520442,0.0011256806,0.00044869957,0.00047266192,0.000030127736,0.00017135445,0.0000021965611],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00006146631,0.00006492443,0.0060320236,0.000047139856,0.000041315478,0.000038346534,0.00024065761,0.002152272,0.69233775,0.0034079535,0.00023881962,0.29533732],"study_design_scores_gemma":[0.0018106395,0.0009473468,0.0040917383,0.00013116925,0.000012636622,0.00025515514,0.00024108584,0.015012695,0.8305397,0.14588033,0.0007930909,0.00028440825],"about_ca_topic_score_codex":6.009219e-7,"about_ca_topic_score_gemma":0.000010863391,"teacher_disagreement_score":0.2950529,"about_ca_system_score_codex":0.00010289921,"about_ca_system_score_gemma":0.00010322596,"threshold_uncertainty_score":0.2930941},"labels":[],"label_agreement":null},{"id":"W2389379251","doi":"10.1016/j.jmatprotec.2016.05.017","title":"Optimized solder alloy for glass-to-metal joints by simultaneous soldering and anodic bonding","year":2016,"lang":"en","type":"article","venue":"Journal of Materials Processing Technology","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":35,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Toronto","funders":"European Commission","keywords":"Soldering; Materials science; Metallurgy; Alloy; Anode; Metal; Anodic bonding; Electrode; Silicon; Chemistry","score_opus":0.008829217280582455,"score_gpt":0.22851624641416848,"score_spread":0.21968702913358604,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2389379251","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9126122,0.0011039887,0.08316,0.0018660069,0.00041911038,0.00018427862,0.000018815352,0.0006182367,0.000017363873],"genre_scores_gemma":[0.9508978,0.00018426175,0.0486546,0.00002805634,0.00007490045,0.000020699932,6.0730827e-7,0.000056247034,0.00008279804],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9986848,0.000010190904,0.00058554317,0.00018435034,0.0001256232,0.00040946444],"domain_scores_gemma":[0.9993191,0.000098633696,0.00024346745,0.00014838032,0.00012541535,0.000065030166],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0003262148,0.00022728268,0.0005499466,0.00047570566,0.00009482603,0.00008436506,0.00032185556,0.0003306157,0.00001491744],"category_scores_gemma":[0.0005573896,0.00015977159,0.00004461711,0.00016879477,0.00013577132,0.00026083385,0.00011026724,0.00012839145,0.0000042717115],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00006017126,0.000014517042,0.00001623423,0.00012813823,0.000048858485,0.000021048638,0.00003604095,0.000111364505,0.9527707,0.00010957568,0.0008758479,0.045807507],"study_design_scores_gemma":[0.0013966893,0.00025983018,0.000004827476,0.00045748593,0.000047663347,0.00042485478,0.00013246419,0.00047249062,0.9885458,0.0029638603,0.005033769,0.00026028504],"about_ca_topic_score_codex":4.4064367e-7,"about_ca_topic_score_gemma":2.7187303e-7,"teacher_disagreement_score":0.04554722,"about_ca_system_score_codex":0.000074000476,"about_ca_system_score_gemma":0.000028371369,"threshold_uncertainty_score":0.6515296},"labels":[],"label_agreement":null},{"id":"W2513352037","doi":"10.1109/jssc.2016.2596773","title":"A 0.3 pJ/bit 20 Gb/s/Wire Parallel Interface for Die-to-Die Communication","year":2016,"lang":"en","type":"article","venue":"IEEE Journal of Solid-State Circuits","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":41,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Toronto","funders":"","keywords":"Die (integrated circuit); Transceiver; CMOS; Interposer; Transmitter; Electrical engineering; Electronic circuit; Silicon on insulator; Computer science; Materials science; Optoelectronics; Electronic engineering; Computer hardware; Channel (broadcasting); Silicon; Engineering; Nanotechnology; Layer (electronics)","score_opus":0.026848028749976893,"score_gpt":0.27395980987431695,"score_spread":0.24711178112434007,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2513352037","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.5138699,0.003966285,0.47644347,0.0026041393,0.0010532571,0.00045626337,0.00012240994,0.0004110521,0.0010732767],"genre_scores_gemma":[0.9951871,0.002680249,0.0013077918,0.00006683333,0.00010817465,0.00002183353,9.953077e-7,0.000052916617,0.0005740823],"study_design_codex":"design_other","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9987167,0.000024740395,0.0005742343,0.00012446093,0.00018639716,0.00037344635],"domain_scores_gemma":[0.99887097,0.00017921734,0.00020437028,0.00038312885,0.00022752074,0.00013480769],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00030648606,0.00020360283,0.00036761299,0.00020686185,0.000076838056,0.00003564537,0.00063953997,0.0001176958,0.000014163671],"category_scores_gemma":[0.0001238944,0.00015033061,0.00014059652,0.00009606307,0.00007242873,0.00034441001,0.000045974306,0.00025072615,0.00006896932],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00018126858,0.00020563525,0.0007859065,0.0003666564,0.0009045421,0.00010112761,0.0041796146,0.045814272,0.3151107,0.00038619796,0.088187374,0.5437767],"study_design_scores_gemma":[0.010782212,0.002092574,0.0045382776,0.0048405603,0.00032767435,0.0005157034,0.0021299052,0.006097696,0.63862526,0.048601355,0.27898404,0.0024647096],"about_ca_topic_score_codex":0.0000019909314,"about_ca_topic_score_gemma":0.000022087985,"teacher_disagreement_score":0.541312,"about_ca_system_score_codex":0.00016421425,"about_ca_system_score_gemma":0.000036731635,"threshold_uncertainty_score":0.61303043},"labels":[],"label_agreement":null},{"id":"W2514960441","doi":"10.1149/07509.0117ecst","title":"Combined Surface Activated Bonding Technique for Hydrophilic SiO<sub>2</sub>-SiO<sub>2</sub> and Cu-Cu Bonding","year":2016,"lang":"en","type":"article","venue":"ECS Transactions","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":19,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Optech (Canada)","funders":"","keywords":"Anodic bonding; Annealing (glass); Materials science; Direct bonding; Wafer bonding; Void (composites); Wafer; Bonding strength; Scanning electron microscope; Transmission electron microscopy; Composite material; Analytical Chemistry (journal); Nanotechnology; Chemistry","score_opus":0.010436032376482574,"score_gpt":0.2092559784798357,"score_spread":0.19881994610335313,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2514960441","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.7439715,0.0001337874,0.2518627,0.0006163464,0.00029642953,0.00074422505,0.00009348194,0.00201651,0.0002650016],"genre_scores_gemma":[0.99715585,0.0005248613,0.0017127213,0.00001632254,0.00004314764,0.00030528166,0.000011585953,0.00013745716,0.00009278418],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9982109,0.000027098236,0.00041608958,0.00047491072,0.0001901511,0.00068084715],"domain_scores_gemma":[0.99892986,0.00033014506,0.000075307704,0.0004505913,0.00006077332,0.0001533536],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.00019954736,0.00043460535,0.0004318747,0.0003427844,0.00043498346,0.00006221973,0.0002358319,0.00044420944,0.000016503769],"category_scores_gemma":[0.00004984446,0.00038787108,0.00017645219,0.000563785,0.00016672876,0.0005087475,0.000021634933,0.00043311584,0.00002882506],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00003236492,0.000050922263,0.000070198555,0.000102338905,0.00011090536,0.000005616698,0.000084708285,0.00078318524,0.98952895,0.0006098282,0.00047649795,0.008144472],"study_design_scores_gemma":[0.0010218018,0.00012590231,0.00029986846,0.00021889273,0.00008466297,0.000028766679,0.00011840078,0.0016458561,0.9921097,0.0021811908,0.0016316628,0.0005332799],"about_ca_topic_score_codex":0.0000075668545,"about_ca_topic_score_gemma":0.000026878439,"teacher_disagreement_score":0.25318432,"about_ca_system_score_codex":0.00022478626,"about_ca_system_score_gemma":0.00003125116,"threshold_uncertainty_score":0.9998573},"labels":[],"label_agreement":null},{"id":"W2517304238","doi":"10.1149/ma2016-02/29/1915","title":"Processing Hundreds of Nanometres Thick Electrografted P4VP for High Aspect Ratio TSV Insulation","year":2016,"lang":"en","type":"article","venue":"ECS Meeting Abstracts","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":true,"ca_institutions":"Université de Sherbrooke","funders":"","keywords":"Materials science; Monomer; Electrochemistry; Dielectric; Polymerization; Polymer; Silicon; Aqueous solution; Chemical engineering; Polymer chemistry; Electrode; Composite material; Organic chemistry; Optoelectronics; Chemistry","score_opus":0.011803760968123874,"score_gpt":0.2235421879595106,"score_spread":0.21173842699138673,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2517304238","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9886969,0.0006063906,0.00254475,0.0001670169,0.0001334758,0.00019983969,0.000007777547,0.0008347762,0.0068091224],"genre_scores_gemma":[0.99357957,0.00003259785,0.0061598127,0.00000453438,0.000079575046,0.00002726793,0.000007167874,0.000034249853,0.00007521],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9990857,0.0000079995325,0.0003366723,0.00015835497,0.00013818228,0.0002730878],"domain_scores_gemma":[0.99940735,0.00018705236,0.0001312898,0.00015477062,0.0000910209,0.00002853783],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00023487842,0.00013761087,0.00018296634,0.000173235,0.000070556256,0.000028630875,0.00013216866,0.00013972494,0.000006339934],"category_scores_gemma":[0.0005145986,0.00010939878,0.000043999906,0.0002520223,0.000045088043,0.00018161541,0.000016353102,0.00008988524,0.00000761649],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000022888837,0.000037904105,0.0016848823,0.00023849781,0.000054019267,0.0000017114724,0.00016823591,0.0113193365,0.9373045,0.00037971797,0.00024916756,0.048539147],"study_design_scores_gemma":[0.0004262531,0.00008655029,0.03085758,0.00027082703,0.000020498253,0.0000021459107,0.000056394623,0.0014970462,0.96290994,0.0031175807,0.00056494225,0.00019026331],"about_ca_topic_score_codex":0.000020456968,"about_ca_topic_score_gemma":0.000009112959,"teacher_disagreement_score":0.048348885,"about_ca_system_score_codex":0.000061019717,"about_ca_system_score_gemma":0.000028242495,"threshold_uncertainty_score":0.44611526},"labels":[],"label_agreement":null},{"id":"W2527810829","doi":"10.1109/tcpmt.2016.2610321","title":"Vacuum-Assisted Through Silicon via Filling Method With Ag-Based Epoxy","year":2016,"lang":"en","type":"article","venue":"IEEE Transactions on Components Packaging and Manufacturing Technology","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":2,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Alberta","funders":"Government of Alberta; CMC Microsystems","keywords":"Materials science; Epoxy; Microfabrication; Silicon; Electroplating; Composite material; Electrical resistivity and conductivity; Doping; Optoelectronics; Electrical engineering; Fabrication","score_opus":0.016333443622301384,"score_gpt":0.22957699428578565,"score_spread":0.21324355066348427,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2527810829","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.33893576,0.00007050372,0.65674883,0.0008724574,0.00021404111,0.0001417622,0.00001264637,0.0029068822,0.000097090066],"genre_scores_gemma":[0.9699353,0.00009520112,0.029685603,0.00005174649,0.0000127588855,0.00007572303,0.0000018717227,0.00006718687,0.00007460079],"study_design_codex":"design_other","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9985746,0.00002661184,0.00026796502,0.0004578114,0.00015914234,0.00051385723],"domain_scores_gemma":[0.9991446,0.00017019115,0.0000588262,0.0005419345,0.000022272065,0.000062175495],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.00008796718,0.00037633587,0.00036948384,0.0005285959,0.00025355065,0.000029011999,0.00026088333,0.0003217952,0.000031454732],"category_scores_gemma":[0.0000026535417,0.00027001766,0.00006986289,0.00020309484,0.00021634279,0.00015846002,0.000005552623,0.0004555551,0.000025225067],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00011916796,0.00021974843,0.00025798476,0.00020804735,0.00051049824,0.00009733866,0.00012131762,0.022912653,0.30635297,0.00022080098,0.00011136839,0.6688681],"study_design_scores_gemma":[0.0012411159,0.00015066646,0.00046405397,0.00026727802,0.000063183834,0.00011513782,0.00006353463,0.005033294,0.98903567,0.0016859276,0.001444012,0.00043612308],"about_ca_topic_score_codex":0.000027191216,"about_ca_topic_score_gemma":0.000016877164,"teacher_disagreement_score":0.6826827,"about_ca_system_score_codex":0.00010392161,"about_ca_system_score_gemma":0.000010289271,"threshold_uncertainty_score":0.9999752},"labels":[],"label_agreement":null},{"id":"W2549474452","doi":"","title":"Packaging and Characterization of Silicon and SiC-based Power Inverter Module with Double Sided Cooling","year":2016,"lang":"en","type":"article","venue":"Publikationsdatenbank der Fraunhofer-Gesellschaft (Fraunhofer-Gesellschaft)","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":3,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Infineon Technologies (Canada)","funders":"","keywords":"Materials science; Power module; Soldering; Silicon; Optoelectronics; Junction temperature; Transient (computer programming); Silicon carbide; Wafer; Power density; Fabrication; Reliability (semiconductor); Power semiconductor device; Diode; Electrical engineering; Power (physics); Composite material; Voltage; Engineering; Computer science","score_opus":0.009081533334915277,"score_gpt":0.1904415130037608,"score_spread":0.18135997966884554,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2549474452","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.94598156,0.0011355001,0.045039248,0.0027325219,0.00048875995,0.0013576397,0.00020477912,0.0015170778,0.0015429382],"genre_scores_gemma":[0.9951472,0.0009771473,0.0020157392,0.00034738617,0.00013681847,0.00023537995,0.0002165203,0.00028068214,0.00064307183],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99492717,0.00015103171,0.0013305031,0.0013050681,0.00087102834,0.0014151768],"domain_scores_gemma":[0.9964014,0.0005246786,0.00044272776,0.0014271166,0.0006972132,0.0005068525],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.00072961807,0.0011271251,0.0012010598,0.001333716,0.00042284004,0.00036343024,0.0007081646,0.0007674721,0.00043812805],"category_scores_gemma":[0.00018898341,0.00088624784,0.0001634376,0.0013366932,0.0007515523,0.0023720916,0.00030020755,0.00074810826,0.00012501772],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0016326893,0.0012926782,0.161813,0.0026438031,0.002177832,0.00011635556,0.0041161436,0.0026255965,0.74616486,0.015676903,0.0051468997,0.05659325],"study_design_scores_gemma":[0.022677606,0.0014841869,0.17447232,0.0032428321,0.0009694346,0.00024536293,0.0018753585,0.08323745,0.6841894,0.005540894,0.015396571,0.0066685877],"about_ca_topic_score_codex":0.000075323434,"about_ca_topic_score_gemma":0.00006627608,"teacher_disagreement_score":0.08061185,"about_ca_system_score_codex":0.00018759228,"about_ca_system_score_gemma":0.0001774327,"threshold_uncertainty_score":0.99935883},"labels":[],"label_agreement":null},{"id":"W2555318774","doi":"10.1145/1289816.1289846","title":"Three-dimensional multiprocessor system-on-chip thermal optimization","year":2007,"lang":"en","type":"article","venue":"","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":65,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Queen's University","funders":"Northwestern University","keywords":"MPSoC; Multiprocessing; Three-dimensional integrated circuit; Computer science; Frequency scaling; Scheduling (production processes); System on a chip; Chip; Embedded system; Power density; Parallel computing; Voltage; Power (physics); Engineering; Electrical engineering","score_opus":0.010081664106517807,"score_gpt":0.20127996810011173,"score_spread":0.19119830399359392,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2555318774","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.30103716,0.00014774247,0.6468977,0.000041679385,0.00030822936,0.00014458227,0.0000021272017,0.003345208,0.048075575],"genre_scores_gemma":[0.97969025,0.0000012899119,0.020130021,0.000027055916,0.00004612765,0.0000053480226,0.0000036773415,0.000018643465,0.00007759414],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99949515,0.0000013631637,0.00012220281,0.00009558834,0.00010987018,0.0001758323],"domain_scores_gemma":[0.99977124,0.00003957942,0.000012255836,0.00012793319,0.000022341465,0.000026666083],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00009193222,0.00009583646,0.000080302234,0.00007057705,0.00004073193,0.000010087025,0.000087374654,0.0000957911,0.000064827575],"category_scores_gemma":[0.000012956151,0.00007449744,0.000023062636,0.000104368184,0.000019143488,0.00005631932,0.000015981565,0.000089721594,0.00010191582],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000010394476,0.000013238594,0.00045319655,0.00004078122,0.000018230528,0.000009105616,0.000014294051,0.9868634,0.00084853714,0.0046006097,0.00053032365,0.006597942],"study_design_scores_gemma":[0.00029520347,0.00003035827,0.0022250258,0.000037863134,0.0000056779386,0.000007661624,0.00010519054,0.97217065,0.024764271,0.000042920376,0.00014231425,0.00017285509],"about_ca_topic_score_codex":0.000007354114,"about_ca_topic_score_gemma":0.000011625729,"teacher_disagreement_score":0.67865306,"about_ca_system_score_codex":0.000035614765,"about_ca_system_score_gemma":0.000003997352,"threshold_uncertainty_score":0.30379173},"labels":[],"label_agreement":null},{"id":"W2580683779","doi":"10.1016/b978-081551577-7.50013-4","title":"Packaging","year":2009,"lang":"en","type":"book-chapter","venue":"Elsevier eBooks","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Simon Fraser University","funders":"","keywords":"Computer science","score_opus":0.010107126895932107,"score_gpt":0.19654646006996473,"score_spread":0.18643933317403263,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2580683779","genre_codex":"other","genre_gemma":"other","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"other","genre_consensus":"other","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.000012940829,0.003196069,0.000023784567,0.000029042427,0.00028029343,0.0001600967,0.000008385011,0.0018034168,0.994486],"genre_scores_gemma":[0.003022076,0.00035451958,0.0005222095,0.000085391344,0.00018445273,0.000008480069,0.000008412723,0.00010192674,0.9957125],"study_design_codex":"design_other","study_design_gemma":"not_applicable","domain_scores_codex":[0.99915546,0.0000018904296,0.00022887615,0.00020769286,0.00014676241,0.00025929598],"domain_scores_gemma":[0.99941343,0.000014591236,0.000039393013,0.0004647378,0.000018879353,0.000048951177],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.000048402006,0.00034938127,0.00035045584,0.0001471412,0.00003974505,0.000028482553,0.0002542679,0.00040022633,0.00013211927],"category_scores_gemma":[0.0000042315382,0.00034272613,0.00013992032,0.0000072548974,0.00006229812,0.000024982828,0.000048236798,0.0005455681,0.00046617282],"study_design_candidate":"design_other","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[4.5898676e-7,5.6792544e-7,8.442877e-7,0.000039323742,0.000044605527,0.0000327036,0.000023942723,0.000008088764,0.0000145507875,0.008772558,0.0008063298,0.990256],"study_design_scores_gemma":[0.000065713044,0.000014912605,0.000008095439,0.00022216808,0.000035542267,0.000012456052,0.0000031560808,0.000032537533,0.00017165103,0.04548449,0.9535827,0.00036654843],"about_ca_topic_score_codex":3.2150222e-8,"about_ca_topic_score_gemma":0.0000025946972,"teacher_disagreement_score":0.9898895,"about_ca_system_score_codex":0.00006869669,"about_ca_system_score_gemma":0.000013905174,"threshold_uncertainty_score":0.9999025},"labels":[],"label_agreement":null},{"id":"W2592780492","doi":"10.1109/antem.2004.7860590","title":"Root-of-area formula of electrical capacitance, for equivalent circuit of thermal conduction, from an HBT-IC through a GaAs substrate with temperature dependent conductivity","year":2004,"lang":"en","type":"article","venue":"","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Capacitance; Equivalent circuit; Substrate (aquarium); Materials science; Thermal resistance; Thermal conduction; Heterojunction bipolar transistor; Optoelectronics; Thermal conductivity; Parasitic capacitance; Computation; Thermal; Electrical engineering; Electronic engineering; Transistor; Composite material; Computer science; Physics; Engineering; Voltage; Bipolar junction transistor; Thermodynamics","score_opus":0.03008765346088113,"score_gpt":0.23817844387833037,"score_spread":0.20809079041744924,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2592780492","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.96585494,0.00041758656,0.032266464,0.000022497783,0.000082494465,0.00036982304,0.0000870386,0.00020318915,0.00069595897],"genre_scores_gemma":[0.9971397,0.000027762739,0.0027039028,0.0000049201576,0.000020913234,0.00003626406,0.000021995133,0.000026944925,0.000017609247],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99899095,0.000010319875,0.00032482535,0.00021598094,0.00019834649,0.00025956362],"domain_scores_gemma":[0.9993456,0.0000443289,0.00010121319,0.0003248888,0.0001489589,0.000035030545],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00007121022,0.00020046702,0.00040109127,0.00006628836,0.000032454034,0.000008529497,0.00018855155,0.00020877707,0.00003233599],"category_scores_gemma":[0.000018524142,0.00015099272,0.00007729684,0.00022601454,0.0001438044,0.00035387595,0.0000081610215,0.000196929,5.0980714e-7],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00008533893,0.00018973484,0.002700683,0.00013680641,0.00024214205,0.0000030865244,0.00058555376,0.008551163,0.964648,0.022369403,0.00002587173,0.00046219103],"study_design_scores_gemma":[0.0012141905,0.0004568248,0.0040230323,0.00005010546,0.00005688591,0.000009173353,0.000557114,0.00018676984,0.98193914,0.011304007,0.000010771281,0.00019199795],"about_ca_topic_score_codex":0.00025436666,"about_ca_topic_score_gemma":0.0003064367,"teacher_disagreement_score":0.031284742,"about_ca_system_score_codex":0.00006665032,"about_ca_system_score_gemma":0.00006884479,"threshold_uncertainty_score":0.61573046},"labels":[],"label_agreement":null},{"id":"W2600443473","doi":"10.1063/1.4979173","title":"High performance 3D printed electronics using electroless plated copper","year":2017,"lang":"en","type":"article","venue":"AIP Advances","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":37,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Simon Fraser University","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Inductor; Toroid; Materials science; Printed circuit board; Electromagnetic coil; Inductance; Copper; Plating (geology); 3d printed; Electronics; 3D printing; Core (optical fiber); Copper plating; Optoelectronics; Composite material; Electrical engineering; Layer (electronics); Metallurgy; Engineering; Biomedical engineering; Voltage; Plasma; Physics; Electroplating","score_opus":0.0092826199899686,"score_gpt":0.23322397940158693,"score_spread":0.22394135941161833,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2600443473","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9902413,0.003686619,0.003181996,0.000046116565,0.0002580524,0.000084373176,0.0000021516862,0.00071923406,0.0017801854],"genre_scores_gemma":[0.9934297,0.003723962,0.002677716,0.000017313678,0.000044842804,0.000009177344,0.000003023696,0.000026998496,0.00006723981],"study_design_codex":"design_other","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99922997,0.0000038108803,0.00013158633,0.00015366016,0.00009596383,0.00038500037],"domain_scores_gemma":[0.99947137,0.000012750573,0.000057807938,0.00040411408,0.000029006493,0.000024967901],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000047112033,0.000153085,0.00017125614,0.000049552797,0.00025747844,0.000055837372,0.00037783998,0.000091620444,0.000014171603],"category_scores_gemma":[0.000025955538,0.00013959107,0.000023633775,0.00006268811,0.000085861764,0.00049554923,0.000051748942,0.0002447859,0.000025787876],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00014182106,0.000099292345,0.064469256,0.00050549867,0.000415756,0.000047911388,0.00020619681,0.21574223,0.19804521,0.006640733,0.00074340275,0.5129427],"study_design_scores_gemma":[0.0010633927,0.00024700386,0.017859679,0.00021489215,0.000052579075,0.00004530621,0.00007620318,0.32459384,0.6012396,0.0017326758,0.05194455,0.00093026494],"about_ca_topic_score_codex":0.000007844177,"about_ca_topic_score_gemma":0.000020639953,"teacher_disagreement_score":0.5120124,"about_ca_system_score_codex":0.00008246766,"about_ca_system_score_gemma":0.000019203077,"threshold_uncertainty_score":0.56923586},"labels":[],"label_agreement":null},{"id":"W2600914159","doi":"10.1115/1.4036368","title":"Far Back End of Line Aluminum Stress Reduction Methods for Two-Dimensional/2.5D Fine Pitch Assemblies","year":2017,"lang":"en","type":"article","venue":"Journal of Electronic Packaging","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"IBM (Canada)","funders":"","keywords":"Passivation; Stress (linguistics); Materials science; Interconnection; Back end of line; Temperature cycling; Finite element method; Aluminium; Layer (electronics); Structural engineering; Thermal; Computer science; Composite material; Engineering","score_opus":0.02591407104776074,"score_gpt":0.32804989978520727,"score_spread":0.30213582873744654,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2600914159","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.8366856,0.012624835,0.14688691,0.0012920013,0.0011741172,0.00024786397,0.000012004889,0.000119703545,0.0009569863],"genre_scores_gemma":[0.9640973,0.0002686245,0.03515235,0.0000053570457,0.00025941574,0.0000038557832,0.000002720865,0.000032033207,0.00017830131],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99881136,0.000029462108,0.0004769143,0.00011847327,0.00016274091,0.00040105908],"domain_scores_gemma":[0.99881995,0.00013284243,0.00047301842,0.00033562523,0.00019346323,0.00004512828],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0007708069,0.00016957983,0.0004094383,0.00020621197,0.00012814716,0.000044974437,0.00037526642,0.00009260252,0.000026508196],"category_scores_gemma":[0.00027292763,0.00014796256,0.00016691828,0.00008165623,0.0000836792,0.00035263028,0.00005277375,0.00043262524,0.000001721597],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00011427006,0.00010225605,0.00061368244,0.00025899755,0.0007694976,0.000007907594,0.00018815772,0.045168687,0.6894105,0.0031891915,0.002618381,0.25755844],"study_design_scores_gemma":[0.0014706047,0.00044631396,0.0007041825,0.00028240256,0.00015693087,0.00021902681,0.00017724036,0.026213013,0.9549769,0.010759292,0.0043140235,0.00028008057],"about_ca_topic_score_codex":0.000009413095,"about_ca_topic_score_gemma":0.000015917683,"teacher_disagreement_score":0.26556635,"about_ca_system_score_codex":0.00013866543,"about_ca_system_score_gemma":0.00010196591,"threshold_uncertainty_score":0.6033738},"labels":[],"label_agreement":null},{"id":"W2611406581","doi":"10.1109/jmems.2017.2675987","title":"Practical CMUT Fabrication With a Nitride-to-Oxide-Based Wafer Bonding Process","year":2017,"lang":"en","type":"article","venue":"Journal of Microelectromechanical Systems","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":14,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Natural Sciences and Engineering Research Council of Canada; University of Waterloo; Université de Sherbrooke; CMC Microsystems","keywords":"Capacitive micromachined ultrasonic transducers; Materials science; Wafer bonding; Wafer; Fabrication; Silicon on insulator; Optoelectronics; LOCOS; Surface micromachining; Microelectromechanical systems; Silicon nitride; Electronic engineering; Silicon; Piezoelectricity; Composite material; Engineering","score_opus":0.019227636683986533,"score_gpt":0.2751285167642341,"score_spread":0.2559008800802476,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2611406581","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.69812196,0.00021901213,0.29939297,0.0012678688,0.00031879803,0.00028626947,0.0000025376862,0.00017179306,0.00021877482],"genre_scores_gemma":[0.99584025,0.000016027792,0.0038163213,0.000029334251,0.00018189944,0.00001974396,6.9844276e-7,0.000041497442,0.000054214874],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99852,0.000030528896,0.00052173896,0.00016223748,0.00037549142,0.00038996188],"domain_scores_gemma":[0.9986302,0.00009158549,0.0004123437,0.00038861885,0.00031375716,0.00016349039],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00050553196,0.00019745243,0.0004381878,0.00021059204,0.00016817631,0.00024157322,0.0005200357,0.00016736556,0.0000065249724],"category_scores_gemma":[0.00050007703,0.00014508104,0.000088272944,0.00017105909,0.000033252854,0.00032985123,0.000028635523,0.0005606295,0.000024369247],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00048192526,0.0002118919,0.0016835922,0.0004921738,0.00045521185,0.00035050692,0.00008918851,0.0034907924,0.97457224,0.00583406,0.009182779,0.0031556664],"study_design_scores_gemma":[0.0040837647,0.003692013,0.001919256,0.0019552782,0.00038162028,0.0039403723,0.00065255776,0.03632524,0.92970747,0.001898929,0.014088219,0.0013552706],"about_ca_topic_score_codex":0.000010827544,"about_ca_topic_score_gemma":0.0000037576935,"teacher_disagreement_score":0.2977183,"about_ca_system_score_codex":0.000231428,"about_ca_system_score_gemma":0.00012538659,"threshold_uncertainty_score":0.5916233},"labels":[],"label_agreement":null},{"id":"W2616120233","doi":"10.71781/12011","title":"Optimisation des paramètres expérimentaux pour l’analyse des fibres d’amiante par microscopie électronique en transmission","year":2016,"lang":"fr","type":"dissertation","venue":"Papyrus : Institutional Repository (Université de Montréal)","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"","funders":"Institut de Recherche Robert-Sauvé en Santé et en Sécurité du Travail","keywords":"Materials science; Physics","score_opus":0.005783737620678778,"score_gpt":0.1852189211590923,"score_spread":0.17943518353841353,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2616120233","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9043342,0.057431914,0.022637002,0.00027453838,0.00045931988,0.00048245455,0.00009230392,0.0006290819,0.013659224],"genre_scores_gemma":[0.9411316,0.010592205,0.024715334,0.000014711968,0.00014480313,0.000058681042,0.0002874286,0.00008458158,0.022970645],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9972768,0.00017507884,0.000568476,0.00071669085,0.00044575124,0.00081721],"domain_scores_gemma":[0.9985137,0.00024200624,0.0002827139,0.00043988237,0.00021612631,0.00030555224],"candidate_categories":["metaepi_narrow","sts"],"consensus_categories":[],"category_scores_codex":[0.00018622151,0.0007591585,0.0005847604,0.00046320676,0.0057157306,0.00009656645,0.0005695846,0.0009609877,0.00016805403],"category_scores_gemma":[0.00007512144,0.000761447,0.0004613692,0.00033262916,0.00066061073,0.0007431147,0.00010555455,0.0005653357,0.000103043625],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":true,"about_ca_topic_consensus":false,"about_ca_system_candidate":true,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00075211487,0.00025987328,0.021940725,0.00096795085,0.0013107469,0.0010187338,0.0412166,0.015958883,0.81805694,0.0058215572,0.0004875486,0.09220835],"study_design_scores_gemma":[0.0012051502,0.00019008029,0.033725835,0.0022888214,0.00067757803,0.0004259091,0.025230821,0.0028702456,0.92228127,0.0032525149,0.0068132356,0.0010385175],"about_ca_topic_score_codex":0.02383924,"about_ca_topic_score_gemma":0.0033237268,"teacher_disagreement_score":0.10422438,"about_ca_system_score_codex":0.010363023,"about_ca_system_score_gemma":0.0012516119,"threshold_uncertainty_score":0.99948364},"labels":[],"label_agreement":null},{"id":"W2620963316","doi":"10.1002/sdtp.11804","title":"69‐4: Active Backplane Design for Digital Video Walls","year":2017,"lang":"en","type":"article","venue":"SID Symposium Digest of Technical Papers","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":2,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Christie (Canada); University of Waterloo","funders":"Mitacs","keywords":"Backplane; Digital video; Computer science; Computer graphics (images); Computer hardware; Telecommunications","score_opus":0.015363058374572343,"score_gpt":0.2331995911769127,"score_spread":0.21783653280234036,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2620963316","genre_codex":"other","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.049470723,0.00020152038,0.0010229978,0.001654895,0.00055004365,0.0013449155,0.0002356962,0.0023929088,0.9431263],"genre_scores_gemma":[0.99860364,0.00014148085,0.0007182013,0.000014795448,0.000049500897,0.00009621825,0.000014947544,0.000047045774,0.00031416438],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99892086,0.0000052185746,0.0002780011,0.00025864437,0.00016923793,0.000368027],"domain_scores_gemma":[0.9987793,0.00023819537,0.000103905804,0.00076021545,0.0000403459,0.000078035686],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00009440444,0.00023474448,0.0003480166,0.00006480901,0.00014867264,0.00009195631,0.00077179726,0.0002870243,0.000016983093],"category_scores_gemma":[0.00029089767,0.00020961538,0.00015961447,0.000048600705,0.00031829294,0.00032765148,0.00013273426,0.00020709907,0.000026605929],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000104377956,0.00007415385,0.0005016728,0.00011598183,0.00010998492,0.0000091563925,0.000033223143,0.001543541,0.9899271,0.0021317778,0.0022649986,0.0031840233],"study_design_scores_gemma":[0.0018024202,0.000968248,0.01811371,0.00028615055,0.0001236202,0.000030100708,0.00016294589,0.00016775483,0.9409324,0.0025336996,0.033725422,0.0011535374],"about_ca_topic_score_codex":0.000005932794,"about_ca_topic_score_gemma":0.0000050919552,"teacher_disagreement_score":0.9491329,"about_ca_system_score_codex":0.00008190094,"about_ca_system_score_gemma":0.000023296046,"threshold_uncertainty_score":0.8547867},"labels":[],"label_agreement":null},{"id":"W2667104373","doi":"10.1109/tdmr.2017.2716943","title":"Wet Metallization of High Aspect Ratio TSV Using Electrografted Polymer Insulator to Suppress Residual Stress in Silicon","year":2017,"lang":"en","type":"article","venue":"IEEE Transactions on Device and Materials Reliability","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":9,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Dalsa Corporation; Institut National de la Recherche Scientifique; Institut interdisciplinaire d'innovation technologique; Université de Sherbrooke","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Microsystem; Materials science; Residual stress; Silicon; Through-silicon via; Silicon on insulator; Reliability (semiconductor); Stress (linguistics); Fabrication; Polymer; Optoelectronics; Composite material; Electronic engineering; Nanotechnology; Engineering","score_opus":0.014708473221386084,"score_gpt":0.250142572607168,"score_spread":0.23543409938578191,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2667104373","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.98314583,0.000051669507,0.015792603,0.00008210067,0.0003094445,0.00032481065,0.00013102304,0.00014591306,0.00001660709],"genre_scores_gemma":[0.99934614,0.00007858352,0.00047641285,0.000009603143,0.000018506753,0.000037130783,0.0000052444084,0.000019720314,0.000008678245],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9990611,0.000046704245,0.00033511332,0.00023226428,0.00011009691,0.00021472345],"domain_scores_gemma":[0.9993263,0.000039854378,0.000061069804,0.0004803601,0.000046505,0.000045939392],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00019130566,0.00015975529,0.0003230507,0.00013562554,0.00011398749,0.00007465167,0.00015652449,0.00014817821,0.000045026234],"category_scores_gemma":[0.000024902107,0.00015398004,0.000028829536,0.00010652318,0.000073930794,0.0002543623,0.000004302807,0.00009491398,0.0000024981841],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00012613663,0.00011712343,0.00038563003,0.0002514927,0.000050175837,0.0000018506995,0.00018710726,0.016520688,0.98045045,0.00015581725,0.0000050500107,0.0017484811],"study_design_scores_gemma":[0.00031622205,0.00007633055,0.009002087,0.00006272988,0.00004065515,0.0000013539851,0.00005169905,0.00076215906,0.98937666,0.00015142707,0.000012162447,0.00014653726],"about_ca_topic_score_codex":0.0014969655,"about_ca_topic_score_gemma":0.00048513676,"teacher_disagreement_score":0.016200291,"about_ca_system_score_codex":0.00007243392,"about_ca_system_score_gemma":0.000020050786,"threshold_uncertainty_score":0.6279124},"labels":[],"label_agreement":null},{"id":"W2735883110","doi":"10.1109/3dic.2016.7969996","title":"Thermal analysis of multi-layer functional 3D logic stacks","year":2016,"lang":"en","type":"article","venue":"","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":9,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"IBM (Canada)","funders":"Defense Advanced Research Projects Agency","keywords":"Computer science; Layer (electronics); Thermal; Thermal analysis; Materials science; Composite material; Physics; Thermodynamics","score_opus":0.033878578598927324,"score_gpt":0.2284411503048671,"score_spread":0.1945625717059398,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2735883110","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.5281916,0.00015360469,0.4562816,0.000116867755,0.000101097314,0.000040098144,0.000015004466,0.0007011785,0.014398937],"genre_scores_gemma":[0.9955421,0.000027004347,0.0031289184,0.000013635525,0.000008960987,0.0000038825174,0.0000018137363,0.0000056318745,0.0012680381],"study_design_codex":"bench_or_experimental","study_design_gemma":"observational","domain_scores_codex":[0.9996569,0.0000032315163,0.000100750425,0.000071323746,0.00006757987,0.00010019157],"domain_scores_gemma":[0.99977404,0.000033535798,0.000011973741,0.00014531032,0.000021926699,0.000013196448],"candidate_categories":["insufficient_payload"],"consensus_categories":[],"category_scores_codex":[0.000034279394,0.000061160434,0.00011519056,0.00013825593,0.000009873235,0.0000025752681,0.0000681808,0.00006081122,0.0019855436],"category_scores_gemma":[0.000013383325,0.000033731623,0.000065298285,0.00021824011,0.00003459454,0.000048796057,0.000020959249,0.000031254884,0.00005865687],"study_design_candidate":"observational","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000027768716,0.00016181075,0.08415982,0.000038642273,0.0055372114,0.000008706103,0.000118855896,0.1511255,0.43811873,0.023116102,0.0052089007,0.29237795],"study_design_scores_gemma":[0.0013519324,0.000085090986,0.60628647,0.00001874917,0.00074920856,0.0000012099468,0.00027492762,0.2630445,0.12281074,0.00076921156,0.004024386,0.00058357464],"about_ca_topic_score_codex":0.0000062734757,"about_ca_topic_score_gemma":0.000014247539,"teacher_disagreement_score":0.5221266,"about_ca_system_score_codex":0.000014859362,"about_ca_system_score_gemma":0.0000030623344,"threshold_uncertainty_score":0.99892676},"labels":[],"label_agreement":null},{"id":"W2744655326","doi":"10.1109/itherm.2017.7992585","title":"Evaluation of high thermal conductivity dielectric on the temperature of PCB components","year":2017,"lang":"en","type":"article","venue":"","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":5,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Advanced Micro Devices (Canada)","funders":"","keywords":"Materials science; Printed circuit board; Thermal conductivity; Dielectric; Composite material; Conductivity; Thermal resistance; Thermal; Optoelectronics; Voltage; Electronic engineering; Electrical engineering; Engineering; Chemistry; Thermodynamics","score_opus":0.055446811000050986,"score_gpt":0.25780705521470576,"score_spread":0.20236024421465476,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2744655326","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.98533183,0.000068902395,0.000020411242,0.00018645123,0.00009397636,0.00011527279,0.0000028049792,0.00006145689,0.014118916],"genre_scores_gemma":[0.9998952,0.000011160682,0.00003157924,0.000003810762,0.000010164957,0.000006341603,9.345331e-7,0.0000047242997,0.000036070498],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99958885,0.000021553766,0.0000697689,0.000049859078,0.00020747569,0.000062520194],"domain_scores_gemma":[0.99950016,0.000036704427,0.000040533305,0.00034894282,0.000068633926,0.000005019625],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00029712365,0.000053183183,0.00008906497,0.000025587426,0.00005362349,0.000008006634,0.0001879369,0.00005835569,0.00006191579],"category_scores_gemma":[0.00012625146,0.000030680287,0.000021669777,0.000032142616,0.00005817207,0.00005398468,0.000022315251,0.000095455616,0.0000037152606],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000012140913,0.00007267084,0.0016878938,0.000029185536,0.00015749336,3.4572844e-7,0.00009566102,0.0050690034,0.9269916,0.029739734,0.0009148863,0.035229374],"study_design_scores_gemma":[0.00023841894,0.00004031709,0.18394339,0.000015060168,0.000029210833,2.9540792e-7,0.00003366883,0.013115636,0.80046755,0.0020460838,0.000016679773,0.000053687927],"about_ca_topic_score_codex":0.00005398118,"about_ca_topic_score_gemma":0.000006186524,"teacher_disagreement_score":0.1822555,"about_ca_system_score_codex":0.000014903102,"about_ca_system_score_gemma":0.0000076057936,"threshold_uncertainty_score":0.12511057},"labels":[],"label_agreement":null},{"id":"W2759096899","doi":"10.1149/ma2006-02/35/1644","title":"High Rate Copper Filling Within High Aspect Ratio Through Silicon Vias for 3-D Chip Stacking","year":2006,"lang":"en","type":"article","venue":"ECS Meeting Abstracts","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":10,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Mitel (Canada)","funders":"","keywords":"Stacking; Copper; Materials science; Silicon; Chip; Through-silicon via; Optoelectronics; Three-dimensional integrated circuit; Electrical engineering; Metallurgy; Integrated circuit; Engineering; Chemistry","score_opus":0.01571941621324131,"score_gpt":0.2223226932061056,"score_spread":0.2066032769928643,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2759096899","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.97448546,0.00043948594,0.0009990529,0.00018993561,0.00092987943,0.00032907783,0.000024915187,0.0018363264,0.020765869],"genre_scores_gemma":[0.9848219,0.000026179083,0.014245621,0.000044717748,0.00046338927,0.000043977947,0.00005705609,0.00008751641,0.0002096401],"study_design_codex":"simulation_or_modeling","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99840504,0.000018986013,0.0005487762,0.00033068334,0.00017127153,0.00052523025],"domain_scores_gemma":[0.999083,0.00034862306,0.00016414233,0.0003027942,0.000063245876,0.000038216014],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.00044398996,0.00030792732,0.000323193,0.00008110562,0.00022580093,0.00013561377,0.00021531875,0.00022512993,0.000017047152],"category_scores_gemma":[0.00029871485,0.00030327647,0.00008272239,0.00016633014,0.00005546707,0.00026703658,0.00003503712,0.0003386079,0.000049987615],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000011288642,0.000021623497,0.0002322864,0.000100805206,0.000039052014,0.000014799963,0.00019916974,0.89617914,0.09796639,0.0016592086,0.0034224,0.00015385181],"study_design_scores_gemma":[0.00065537746,0.000054337965,0.0040647704,0.00021875161,0.000035903984,0.0000066210637,0.0002352278,0.010156876,0.97101194,0.011213135,0.0018543592,0.0004927012],"about_ca_topic_score_codex":0.0005169427,"about_ca_topic_score_gemma":0.00008640416,"teacher_disagreement_score":0.88602227,"about_ca_system_score_codex":0.000097757744,"about_ca_system_score_gemma":0.000025443102,"threshold_uncertainty_score":0.99994195},"labels":[],"label_agreement":null},{"id":"W2783846855","doi":"10.1109/imws-amp.2017.8247327","title":"Multifunction, multiscale, multimaterial and multilayer integration for future wireless systems and applications","year":2017,"lang":"en","type":"article","venue":"","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Polytechnique Montréal","funders":"","keywords":"Wireless; Scalability; Computer science; Emerging technologies; CMOS; Systems engineering; Computer architecture; Telecommunications; Electronic engineering; Engineering","score_opus":0.01086740590200916,"score_gpt":0.23263470452047,"score_spread":0.22176729861846084,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2783846855","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.4230555,0.00047314004,0.5724184,0.00013565515,0.0010393548,0.0012859826,0.00006236763,0.00092739123,0.00060223544],"genre_scores_gemma":[0.99228746,0.00019071533,0.0064553153,0.0000040276745,0.00028666135,0.0005314818,0.000015020465,0.000018849336,0.00021046035],"study_design_codex":"design_other","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9995491,0.0000029136945,0.00012813909,0.00016076979,0.000039353876,0.000119708166],"domain_scores_gemma":[0.99960333,0.000024174673,0.00003620817,0.00025784824,0.000044875287,0.000033585777],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00004988978,0.000119489036,0.00012878064,0.00003787241,0.0003001767,0.00018329817,0.00009054858,0.00014412915,0.0000027656283],"category_scores_gemma":[0.000016113698,0.00009586178,0.000015962454,0.000013916203,0.00007501823,0.00021043356,0.000035127225,0.0000601273,0.0000033667823],"study_design_candidate":"simulation_or_modeling","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000063067164,0.000057792517,0.0066085286,0.0007239245,0.00012470112,0.000001121782,0.0005652866,0.0007857811,0.07645343,0.02606966,0.0028152505,0.88573146],"study_design_scores_gemma":[0.0017826481,0.000040573377,0.026132736,0.00004621662,0.000038051636,0.000013313242,0.001926077,0.9275818,0.01890182,0.00022680941,0.02291566,0.00039432908],"about_ca_topic_score_codex":0.000058801532,"about_ca_topic_score_gemma":0.00006535573,"teacher_disagreement_score":0.92679596,"about_ca_system_score_codex":0.000013329494,"about_ca_system_score_gemma":0.0000021494834,"threshold_uncertainty_score":0.390913},"labels":[],"label_agreement":null},{"id":"W2789915583","doi":"10.1109/tcpmt.2018.2794202","title":"Development of Embedded Redistribution Layer-Based Silicon Interposer for 3-D Integration","year":2018,"lang":"en","type":"article","venue":"IEEE Transactions on Components Packaging and Manufacturing Technology","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":5,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Alberta","funders":"Natural Sciences and Engineering Research Council of Canada; Government of Alberta; CMC Microsystems","keywords":"Materials science; Silicon; Fabrication; Electrical conductor; Redistribution (election); Optoelectronics; Interposer; Contact resistance; Composite material; Nanotechnology; Electronic engineering; Engineering physics; Layer (electronics); Engineering; Etching (microfabrication)","score_opus":0.022604601872157726,"score_gpt":0.24682673645428832,"score_spread":0.22422213458213058,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2789915583","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.48850134,0.000010324807,0.51038677,0.00007403399,0.00022549476,0.00012500818,0.000012371332,0.00063352264,0.000031133262],"genre_scores_gemma":[0.98044586,0.0000068284658,0.019404434,0.000010575417,0.000012329335,0.00007603366,0.000012284385,0.000021151274,0.0000104849205],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99921507,0.0000063983584,0.00026739133,0.00020768035,0.00007651671,0.00022691836],"domain_scores_gemma":[0.9996176,0.00003705329,0.000050395633,0.00022644001,0.000040650957,0.000027878485],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00008260219,0.00017598814,0.00019736795,0.000445167,0.00016748933,0.000012993532,0.00013766171,0.00020031093,0.0000065459376],"category_scores_gemma":[0.0000049730743,0.00017185348,0.000042178155,0.0001040076,0.0001703879,0.00006100266,0.000003135625,0.00019926186,0.0000051028433],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0001046797,0.00012295952,0.000015198481,0.00014842834,0.00012315955,0.0000010028974,0.0003427084,0.0011670395,0.55533206,0.00034195054,0.000099810066,0.44220102],"study_design_scores_gemma":[0.0004892047,0.00011658936,0.00010071608,0.000121039506,0.00001917876,0.000003873187,0.00019554624,0.02077127,0.9764261,0.0006854265,0.00091360824,0.00015742706],"about_ca_topic_score_codex":0.00000234393,"about_ca_topic_score_gemma":0.000016314989,"teacher_disagreement_score":0.49194455,"about_ca_system_score_codex":0.000078512756,"about_ca_system_score_gemma":0.000012341073,"threshold_uncertainty_score":0.70079815},"labels":[],"label_agreement":null},{"id":"W2791036357","doi":"10.1088/1361-6439/aaa878","title":"Study on the mechanism of Si–glass–Si two step anodic bonding process","year":2018,"lang":"en","type":"article","venue":"Journal of Micromechanics and Microengineering","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":12,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"","funders":"University of Waterloo; National Natural Science Foundation of China","keywords":"Anodic bonding; Anode; Mechanism (biology); Materials science; Process (computing); Silicon; Optoelectronics; Chemistry; Computer science; Physical chemistry; Physics; Electrode","score_opus":0.012248756482298825,"score_gpt":0.22651010557699036,"score_spread":0.21426134909469152,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2791036357","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9760917,0.00068664906,0.022236222,0.00007978999,0.0005270734,0.00018760274,0.00000561007,0.000086664084,0.00009872727],"genre_scores_gemma":[0.9986992,0.00014840823,0.0009493274,0.00002076565,0.00011431233,0.000003742172,2.3462297e-7,0.000045269444,0.000018737945],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99893457,0.0000132320765,0.0004611315,0.0001266654,0.00018814112,0.00027626994],"domain_scores_gemma":[0.9993832,0.000054528547,0.00016511064,0.00020975244,0.00013177593,0.00005559202],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00043462342,0.0002244201,0.0003517575,0.00029227196,0.00007814557,0.000041252348,0.00034473147,0.00007758885,0.000009306939],"category_scores_gemma":[0.00004322891,0.0001631681,0.000079841826,0.00026705442,0.00003962704,0.00010941944,0.00007126705,0.00038629601,0.0000031584364],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000017685365,0.000074348565,0.000040025534,0.00008723581,0.00020487187,0.00003349768,0.0012672173,0.00030395534,0.9853814,0.010258708,0.0002426265,0.0020884168],"study_design_scores_gemma":[0.0013727609,0.0014388639,0.00009618433,0.000502125,0.00012978332,0.00041841302,0.005725914,0.014188645,0.972106,0.0026771943,0.0009575279,0.00038658557],"about_ca_topic_score_codex":0.000001875055,"about_ca_topic_score_gemma":0.000002374021,"teacher_disagreement_score":0.02260754,"about_ca_system_score_codex":0.00004828242,"about_ca_system_score_gemma":0.000017556753,"threshold_uncertainty_score":0.6653802},"labels":[],"label_agreement":null},{"id":"W2802507011","doi":"10.3390/mi9050231","title":"Hard-Baked Photoresist as a Sacrificial Layer for Sub-180 °C Surface Micromachining Processes","year":2018,"lang":"en","type":"letter","venue":"Micromachines","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":5,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"École de Technologie Supérieure; McGill University","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Photoresist; Materials science; Surface micromachining; Silicon; Etching (microfabrication); Layer (electronics); Resist; Fabrication; Nanotechnology; Silicon carbide; Optoelectronics; Metallurgy","score_opus":0.01904883046821564,"score_gpt":0.23539675344407876,"score_spread":0.2163479229758631,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2802507011","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.92878777,0.012055215,0.0012500804,0.041637592,0.004565987,0.0020534468,0.0016527101,0.006238944,0.0017582569],"genre_scores_gemma":[0.5460602,0.0028337128,0.05822781,0.27447933,0.054448064,0.0024134123,0.0122772725,0.0056954194,0.043564744],"study_design_codex":"not_applicable","study_design_gemma":"not_applicable","domain_scores_codex":[0.9972376,0.000039251092,0.0006069882,0.0008220623,0.00028834605,0.0010057112],"domain_scores_gemma":[0.9985095,0.000305771,0.00017933692,0.00071776344,0.0002246523,0.00006293482],"candidate_categories":["metaepi_narrow","research_integrity"],"consensus_categories":[],"category_scores_codex":[0.00018314795,0.0010019364,0.00094706955,0.00027541321,0.00032573004,0.00026743702,0.0010203647,0.0014947433,0.00008257956],"category_scores_gemma":[0.00024282807,0.00093147345,0.00030825168,0.00035331774,0.0002627228,0.00015761823,0.00013460354,0.0013753779,0.00029657455],"study_design_candidate":"not_applicable","study_design_consensus":"not_applicable","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000024853614,0.00002072061,0.00009929079,0.0016206868,0.00024159283,0.00008737409,0.0001626617,0.000025461488,0.18357404,0.0000064107685,0.8137545,0.00038244162],"study_design_scores_gemma":[0.00045580434,0.00009955377,0.00007948649,0.00024175686,0.00017662189,0.00008273272,0.000029830815,0.00026287985,0.19198787,0.0005226939,0.80500275,0.0010580075],"about_ca_topic_score_codex":0.00019007204,"about_ca_topic_score_gemma":0.00009136147,"teacher_disagreement_score":0.38272753,"about_ca_system_score_codex":0.00012419152,"about_ca_system_score_gemma":0.00014321883,"threshold_uncertainty_score":0.9998015},"labels":[],"label_agreement":null},{"id":"W2805887040","doi":"10.3390/mi9060287","title":"3D Integrated Circuit Cooling with Microfluidics","year":2018,"lang":"en","type":"review","venue":"Micromachines","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":77,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"York University","funders":"","keywords":"Microfluidics; Thermal management of electronic devices and systems; Three-dimensional integrated circuit; Integrated circuit; Thermal; Electronics; Chip; Engineering; Mechanical engineering; Systems engineering; Nanotechnology; Materials science; Electrical engineering","score_opus":0.02648025340362146,"score_gpt":0.24965489205707977,"score_spread":0.22317463865345832,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2805887040","genre_codex":"review","genre_gemma":"review","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"review","genre_consensus":"review","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.00013241051,0.9930779,0.002374706,0.0000018123468,0.00039161489,0.0003363802,0.00013017961,0.0019364731,0.0016185569],"genre_scores_gemma":[0.00004630411,0.9976032,0.001357573,0.0000089999785,0.00018793528,0.0000503027,0.00021075817,0.00018853237,0.0003463908],"study_design_codex":"design_other","study_design_gemma":"not_applicable","domain_scores_codex":[0.9986625,0.000027604774,0.00043828244,0.00036482755,0.00010232572,0.00040447555],"domain_scores_gemma":[0.99919015,0.00005964856,0.00009787944,0.0005469246,0.000054778997,0.000050611263],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.00009638754,0.0006706584,0.0012863355,0.00028659793,0.000084120045,0.00007685074,0.0005716428,0.00050788536,0.000052856718],"category_scores_gemma":[0.000026487256,0.00045055867,0.00017882735,0.00050385075,0.00017038053,0.00008046076,0.0000805574,0.0006271116,0.00033221045],"study_design_candidate":"not_applicable","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0000018711651,0.000013337856,0.0000063548105,0.00853505,0.00039023667,0.00004206189,0.000038861213,0.0000027177969,0.00011212231,0.000040043837,0.0064625517,0.9843548],"study_design_scores_gemma":[0.000095312906,0.00003676787,6.073196e-7,0.006677014,0.00035015948,0.00023978164,0.000010489932,0.000033016873,0.00018108002,0.000019988232,0.99178755,0.00056824094],"about_ca_topic_score_codex":0.000024881127,"about_ca_topic_score_gemma":0.00001204237,"teacher_disagreement_score":0.985325,"about_ca_system_score_codex":0.00011318994,"about_ca_system_score_gemma":0.00007980965,"threshold_uncertainty_score":0.9997946},"labels":[],"label_agreement":null},{"id":"W2887263428","doi":"10.1109/ectc.2018.00069","title":"Plasma Treatment for Fluxless Flip-Chip Chip-Joining Process","year":2018,"lang":"en","type":"preprint","venue":"","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":15,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"IBM (Canada); Institut interdisciplinaire d'innovation technologique; Université de Sherbrooke","funders":"","keywords":"Flip chip; Materials science; Substrate (aquarium); Chip; Soldering; Reflow soldering; Capacitively coupled plasma; Plasma; Optoelectronics; Nanotechnology; Metallurgy; Inductively coupled plasma; Electrical engineering; Layer (electronics); Adhesive; Engineering","score_opus":0.03828951399632404,"score_gpt":0.27237955263794594,"score_spread":0.2340900386416219,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2887263428","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.8949263,0.0005385958,0.033672757,0.00019920494,0.002008735,0.0016283704,0.00014584721,0.007019582,0.059860587],"genre_scores_gemma":[0.98342854,0.0001516011,0.013158308,0.000017059503,0.00038422665,0.0010116872,0.00010969347,0.00010974353,0.0016291562],"study_design_codex":"design_other","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99867773,0.0000051805314,0.00030439434,0.0004531966,0.00012396647,0.0004355036],"domain_scores_gemma":[0.99919415,0.00006302968,0.00006069678,0.0005584685,0.000063820335,0.000059847727],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.00007175897,0.00047055134,0.0004848152,0.00015771709,0.00008128667,0.00007645566,0.00041320536,0.0005663757,0.00008814041],"category_scores_gemma":[0.000040202805,0.00038326872,0.00017077636,0.000075441756,0.0000645601,0.000052801097,0.00018238873,0.00026842498,0.00007584859],"study_design_candidate":"design_other","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0002433063,0.0006105048,0.0034789608,0.008732339,0.004572715,0.000055493725,0.007930739,0.15025927,0.0013345628,0.0127225015,0.04413117,0.76592845],"study_design_scores_gemma":[0.004286277,0.0010812521,0.00084788783,0.0013712317,0.0005254916,0.000038882456,0.0026058345,0.48892307,0.40767768,0.04305161,0.045728624,0.0038621365],"about_ca_topic_score_codex":0.00001527459,"about_ca_topic_score_gemma":0.000036942638,"teacher_disagreement_score":0.7620663,"about_ca_system_score_codex":0.0001615594,"about_ca_system_score_gemma":0.00006352144,"threshold_uncertainty_score":0.9998619},"labels":[],"label_agreement":null},{"id":"W2894458489","doi":"","title":"Conception d'un réseau de plots configurables multifonctions analogiques et numériques combiné à un réseau de distribution de puissance intégrés à l'échelle de la tranche de silicium","year":2018,"lang":"fr","type":"article","venue":"PolyPublie (École Polytechnique de Montréal)","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"","funders":"Natural Sciences and Engineering Research Council of Canada; Mitacs; Fonds de recherche du Québec – Nature et technologies; CMC Microsystems","keywords":"Humanities; Physics; Art","score_opus":0.008944134137490931,"score_gpt":0.2467981937454196,"score_spread":0.23785405960792866,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2894458489","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.27035448,0.0075181187,0.705487,0.010136593,0.0002675497,0.0007649616,0.0004360656,0.003665402,0.001369849],"genre_scores_gemma":[0.88500494,0.007550036,0.10433908,0.0008848853,0.00046479245,0.0009487998,0.00020973365,0.00019793605,0.00039979297],"study_design_codex":"theoretical_or_conceptual","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99422926,0.0012004441,0.0009352305,0.00080305093,0.00036816872,0.0024638723],"domain_scores_gemma":[0.9969011,0.0006688576,0.00035898451,0.0010691043,0.00032793547,0.0006740156],"candidate_categories":["metaepi_narrow","research_integrity"],"consensus_categories":[],"category_scores_codex":[0.0025939553,0.0009313455,0.00083505997,0.00040412482,0.00075092976,0.00049110124,0.000967507,0.002195689,0.00016354979],"category_scores_gemma":[0.0012490847,0.0011033446,0.00040408224,0.0009450973,0.0014057499,0.0008067117,0.00021202228,0.0020732344,0.000039099483],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":true,"about_ca_topic_consensus":false,"about_ca_system_candidate":true,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00041681743,0.001791827,0.13342935,0.00066795276,0.0008040883,0.0003633398,0.009402547,0.022182515,0.30203912,0.4193257,0.02776084,0.08181589],"study_design_scores_gemma":[0.00133459,0.0005324332,0.07906377,0.0005528102,0.00022397265,0.0005759914,0.0023329041,0.24008334,0.60387963,0.05746875,0.012752511,0.001199278],"about_ca_topic_score_codex":0.04204149,"about_ca_topic_score_gemma":0.009070543,"teacher_disagreement_score":0.6146505,"about_ca_system_score_codex":0.0064240564,"about_ca_system_score_gemma":0.0013545583,"threshold_uncertainty_score":0.9991417},"labels":[],"label_agreement":null},{"id":"W2916808070","doi":"10.1149/ma2018-02/29/950","title":"Temporary Bonding Technologies for Thin Wafer Handling","year":2018,"lang":"en","type":"article","venue":"ECS Meeting Abstracts","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":3,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Research & Development Corporation","funders":"","keywords":"Materials science; Wafer; Wafer bonding; Thin film; Coating; Surface energy; Nanotechnology; Anodic bonding; Composite material; Thermocompression bonding; Optoelectronics; Layer (electronics)","score_opus":0.019375169659364838,"score_gpt":0.23770071324850947,"score_spread":0.21832554358914463,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2916808070","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.8798217,0.0009953314,0.0006974482,0.0004354022,0.00078707095,0.0002534173,0.000008102945,0.008001011,0.109000474],"genre_scores_gemma":[0.98571604,0.000025962787,0.013686652,0.000016060962,0.00020099615,0.000036783724,0.000005361976,0.000050677903,0.00026148706],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9989202,0.000004178998,0.00030124353,0.00022835688,0.00011710056,0.00042892506],"domain_scores_gemma":[0.99939144,0.0001703465,0.000068317924,0.0002892882,0.00005144375,0.00002917921],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0003524258,0.00019549081,0.0001945398,0.00016842633,0.00021026733,0.00006961196,0.00029361135,0.00026406982,0.000005078533],"category_scores_gemma":[0.00050483365,0.00018368152,0.000059186208,0.00018026395,0.00012899483,0.00016702079,0.00007679047,0.00025065435,0.00006735973],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0001149444,0.00018890509,0.02259017,0.0016345163,0.00059091224,0.00013090538,0.002836867,0.07282608,0.64280146,0.003567613,0.1606127,0.092104934],"study_design_scores_gemma":[0.00030164627,0.0000749296,0.00060438615,0.00027584375,0.00001760266,0.000010783979,0.0011954427,0.011274132,0.93636787,0.007320816,0.042162735,0.0003938307],"about_ca_topic_score_codex":0.000013517992,"about_ca_topic_score_gemma":0.0000059507474,"teacher_disagreement_score":0.2935664,"about_ca_system_score_codex":0.00004625928,"about_ca_system_score_gemma":0.000015609348,"threshold_uncertainty_score":0.7490315},"labels":[],"label_agreement":null},{"id":"W2919177272","doi":"10.1109/eptc.2018.8654283","title":"Ceramic Interposers for Ultra-High Density Packaging and 3D Circuit Integration","year":2018,"lang":"en","type":"article","venue":"","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":5,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"École de Technologie Supérieure","funders":"","keywords":"Interposer; Materials science; Ceramic; Packaging engineering; Silicon; Reliability (semiconductor); Through-silicon via; Fabrication; Optoelectronics; Signal integrity; Electronic engineering; Printed circuit board; Computer science; Electrical engineering; Nanotechnology; Engineering; Mechanical engineering; Etching (microfabrication)","score_opus":0.011374728872318598,"score_gpt":0.20749252485207823,"score_spread":0.19611779597975962,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2919177272","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.6277028,0.000023885616,0.36727637,0.00005701972,0.00018223903,0.00009583668,0.000001581769,0.0006050959,0.004055193],"genre_scores_gemma":[0.9960207,0.00001682887,0.003716765,0.000045369776,0.000043738117,0.000008439173,0.000004040875,0.000011445254,0.00013272128],"study_design_codex":"design_other","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99967617,0.0000021551696,0.00007595968,0.0000960856,0.000028991572,0.00012065264],"domain_scores_gemma":[0.9998204,0.000026979424,0.0000086219525,0.00009939795,0.000027875914,0.000016727003],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00004330556,0.00007480176,0.000076733035,0.000049933464,0.000042886637,0.000027368242,0.00005410705,0.00005973978,0.000018485582],"category_scores_gemma":[0.000031556396,0.000064031396,0.000015082789,0.00004916415,0.000058638474,0.00009413995,0.0000098797145,0.000058916463,0.000012169195],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000018986964,0.000018656694,0.005673194,0.00013048375,0.00012106638,0.0000023756572,0.0016691383,0.00006243634,0.15975821,0.060573377,0.007217937,0.7647541],"study_design_scores_gemma":[0.0006183971,0.00020977769,0.011069138,0.00007565489,0.000036426136,0.000020639596,0.0016684043,0.053131633,0.90163094,0.028973525,0.0021119167,0.0004535545],"about_ca_topic_score_codex":0.000030474914,"about_ca_topic_score_gemma":0.000119172255,"teacher_disagreement_score":0.7643006,"about_ca_system_score_codex":0.000027093749,"about_ca_system_score_gemma":0.0000027244898,"threshold_uncertainty_score":0.26111245},"labels":[],"label_agreement":null},{"id":"W2921917561","doi":"10.1109/jmems.2019.2902066","title":"Capabilities and Limits to Form High Aspect-Ratio Microstructures by Molding of Borosilicate Glass","year":2019,"lang":"en","type":"article","venue":"Journal of Microelectromechanical Systems","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":15,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Institut interdisciplinaire d'innovation technologique; Université de Sherbrooke","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Borosilicate glass; Materials science; Aspect ratio (aeronautics); Molding (decorative); Etching (microfabrication); Anodic bonding; Potassium hydroxide; Fabrication; Silicon; Reactive-ion etching; Microelectromechanical systems; Microstructure; Composite material; Nanotechnology; Optoelectronics; Chemical engineering","score_opus":0.003559086015003398,"score_gpt":0.1831226490213544,"score_spread":0.17956356300635098,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2921917561","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.993018,0.0036967655,0.00231102,0.00012869942,0.00045087782,0.00024235038,0.000022092447,0.00006786739,0.000062335275],"genre_scores_gemma":[0.9990675,0.00023738365,0.0005110794,0.000018047236,0.00006693953,0.0000044954854,0.0000012762216,0.000028175897,0.000065135566],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9986777,0.000023673909,0.00064183405,0.00014282654,0.00020361229,0.00031037166],"domain_scores_gemma":[0.9993145,0.00010315489,0.00019276251,0.00018805741,0.000107930544,0.00009361521],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00025009806,0.00018440613,0.00055762933,0.00014878808,0.000028209897,0.00005249715,0.00027525623,0.00017128846,0.000014758283],"category_scores_gemma":[0.000058284626,0.00014885819,0.00008546855,0.00017352466,0.00002751374,0.00013967161,0.000038460355,0.00029770331,0.0000052382265],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00002656484,0.000011062218,0.00015075288,0.00017290197,0.00008474321,0.000001949088,0.0001003482,0.000139354,0.99388015,0.0025856413,0.0019023814,0.00094415946],"study_design_scores_gemma":[0.00049570744,0.0009583479,0.00034547775,0.00017240492,0.00002940971,0.0002987036,0.00034400471,0.00053828344,0.99346507,0.001397184,0.0017437952,0.00021164192],"about_ca_topic_score_codex":0.000043378222,"about_ca_topic_score_gemma":0.000005142973,"teacher_disagreement_score":0.006049475,"about_ca_system_score_codex":0.00014153715,"about_ca_system_score_gemma":0.00002192517,"threshold_uncertainty_score":0.60702604},"labels":[],"label_agreement":null},{"id":"W2924466108","doi":"","title":"BaSrTiO nanoparticles dispersion for 3D integration of decoupling capacitors on glass interposer","year":2016,"lang":"en","type":"preprint","venue":"HAL (Le Centre pour la Communication Scientifique Directe)","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Institut interdisciplinaire d'innovation technologique; Université de Sherbrooke","funders":"","keywords":"Interposer; Capacitor; Decoupling (probability); Materials science; Decoupling capacitor; Dispersion (optics); Nanoparticle; Optoelectronics; Engineering physics; Nanotechnology; Electrical engineering; Optics; Engineering; Physics; Etching (microfabrication); Voltage; Control engineering","score_opus":0.014065602905050998,"score_gpt":0.2191823347577681,"score_spread":0.20511673185271712,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2924466108","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.56022024,0.00031612284,0.43291342,0.0010099016,0.00038985952,0.00033545005,0.000057456255,0.00042716056,0.0043303887],"genre_scores_gemma":[0.96793514,0.00028020877,0.031055108,0.000008619626,0.0000193859,0.000092758084,0.000088100314,0.000041265008,0.00047941497],"study_design_codex":"design_other","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99858356,0.0002548413,0.0004300155,0.00033209464,0.0001782042,0.0002212793],"domain_scores_gemma":[0.99738723,0.00078092975,0.00020455132,0.00095849804,0.0006153425,0.00005347224],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.001229044,0.00023508495,0.0002795776,0.00017861917,0.00009881629,0.00007485855,0.00055510656,0.00027211354,0.000024997562],"category_scores_gemma":[0.00089504715,0.0002023195,0.00015014077,0.000121810735,0.00014453994,0.00009427792,0.00028265722,0.0002814491,0.000012221664],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000068542424,0.00045032182,0.0019900266,0.00087799475,0.00026554495,0.0000014067995,0.007861483,0.0023613353,0.3751393,0.13278593,0.0022429877,0.47595513],"study_design_scores_gemma":[0.00028927063,0.0000011083439,0.00045573374,0.0029090259,0.000029755527,7.5744146e-7,0.0001358237,0.1276117,0.8606719,0.0058534234,0.0017802005,0.00026130036],"about_ca_topic_score_codex":0.000060565835,"about_ca_topic_score_gemma":0.00023340974,"teacher_disagreement_score":0.48553258,"about_ca_system_score_codex":0.0001389509,"about_ca_system_score_gemma":0.000038181453,"threshold_uncertainty_score":0.825035},"labels":[],"label_agreement":null},{"id":"W2939999353","doi":"10.1002/9781119313991.ch17","title":"Process and Equipment for eWLB","year":2019,"lang":"en","type":"other","venue":"","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Infineon Technologies (Canada)","funders":"Bundesministerium für Bildung und Forschung","keywords":"Ball grid array; Compression molding; Wafer; Microelectronics; Manufacturing engineering; Molding (decorative); Computer science; Process (computing); Reliability (semiconductor); Process engineering; Mechanical engineering; Engineering; Materials science; Electrical engineering","score_opus":0.008090062263345651,"score_gpt":0.22325382895334467,"score_spread":0.215163766689999,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2939999353","genre_codex":"other","genre_gemma":"other","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"other","genre_consensus":"other","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.000021120395,0.0013970154,0.010655372,0.000030145018,0.00015044471,0.00030103175,0.000009885311,0.0014362282,0.98599875],"genre_scores_gemma":[0.004657081,0.00024437063,0.0017486577,0.000014352122,0.000043488722,0.00006405942,0.0000049095447,0.00020079299,0.99302226],"study_design_codex":"not_applicable","study_design_gemma":"not_applicable","domain_scores_codex":[0.9997782,2.6214246e-7,0.000035736637,0.00007443196,0.000026298627,0.000085079104],"domain_scores_gemma":[0.99988705,0.000005014527,0.0000072576486,0.0000897437,0.0000026117361,0.000008335603],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000009302511,0.00008307221,0.00009890551,0.000050431034,0.000003406723,0.000005918876,0.000056226723,0.00014227696,0.00015603831],"category_scores_gemma":[0.000002545976,0.0000653003,0.000011012726,0.000015409143,0.00000943851,0.00000726048,0.000013146083,0.00003545975,0.00004855887],"study_design_candidate":"not_applicable","study_design_consensus":"not_applicable","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[3.8832678e-7,0.0000019013758,0.000012971376,0.0006715658,0.00003619057,1.992576e-7,0.000009880283,0.000007330497,0.000015524576,0.0023613423,0.9856573,0.011225411],"study_design_scores_gemma":[0.00012253676,0.000016012658,0.0000029400303,0.000061773484,0.0000076179535,5.626487e-7,0.000048833987,0.00032998002,0.0007246479,0.0005070014,0.9980419,0.000136144],"about_ca_topic_score_codex":0.0000026442233,"about_ca_topic_score_gemma":0.0000052172313,"teacher_disagreement_score":0.012384654,"about_ca_system_score_codex":0.000005480819,"about_ca_system_score_gemma":0.0000030785804,"threshold_uncertainty_score":0.2662869},"labels":[],"label_agreement":null},{"id":"W2974727290","doi":"10.1049/pbcs071f_ch3","title":"Load pull characterization","year":2019,"lang":"en","type":"book-chapter","venue":"Institution of Engineering and Technology eBooks","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Focus Microwaves (Canada)","funders":"","keywords":"Load pull; Active load; Nonlinear system; Scalar (mathematics); Input impedance; Harmonic; Electrical impedance; Engineering; Electronic engineering; Structural engineering; Electrical engineering; Physics; Acoustics; Mathematics; Amplifier; Voltage; Resistor; Geometry","score_opus":0.006367599926171379,"score_gpt":0.16445388666407484,"score_spread":0.15808628673790345,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2974727290","genre_codex":"other","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"other","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.030803774,0.0032129732,0.02126266,0.0001065189,0.0019101201,0.00076627726,0.00013009345,0.007818772,0.9339888],"genre_scores_gemma":[0.9415499,0.00067736645,0.0006555114,0.0000057312623,0.00005522829,0.00001833374,0.000038480306,0.000086419386,0.05691305],"study_design_codex":"theoretical_or_conceptual","study_design_gemma":"not_applicable","domain_scores_codex":[0.9992269,6.8411975e-7,0.00028435502,0.00020333983,0.000111793226,0.00017288853],"domain_scores_gemma":[0.99949366,0.000010166687,0.000071398455,0.00032739856,0.00007304879,0.000024351088],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.00004344125,0.00029064986,0.00037253537,0.0005605474,0.000025760708,0.000009047277,0.0001613959,0.00077580387,0.000010534652],"category_scores_gemma":[0.000020990616,0.0003143963,0.000046148747,0.000037949038,0.00019675471,0.000044089076,0.00007007551,0.0004631675,0.000028342794],"study_design_candidate":"theoretical_or_conceptual","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0000027180322,0.0000029462458,0.000021820379,0.0004094181,0.00012833136,0.000011902077,0.000016232549,0.0007537365,0.026471626,0.9301291,0.000047905636,0.042004276],"study_design_scores_gemma":[0.00070455647,0.00016508848,0.00009358124,0.0015509914,0.00014751627,0.0001444064,0.000011673381,0.010372994,0.050920356,0.010132893,0.92449284,0.0012630981],"about_ca_topic_score_codex":0.0000010011522,"about_ca_topic_score_gemma":0.0000011579106,"teacher_disagreement_score":0.9244449,"about_ca_system_score_codex":0.000079848556,"about_ca_system_score_gemma":0.00005388368,"threshold_uncertainty_score":0.9999308},"labels":[],"label_agreement":null},{"id":"W2995935674","doi":"10.4071/2380-4505-2019.1.invitedhir000028","title":"SiP and Module","year":2019,"lang":"en","type":"article","venue":"IMAPSource Proceedings","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Infineon Technologies (Canada)","funders":"","keywords":"Toolbox; Standardization; Session (web analytics); Computer science; Interconnection; Computer architecture; System in package; Footprint; Architecture; Embedded system; Software engineering; Systems engineering; Engineering; Telecommunications; Operating system; World Wide Web; Programming language","score_opus":0.0026399305068355817,"score_gpt":0.15366638681087208,"score_spread":0.1510264563040365,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2995935674","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.8111925,0.00023466862,0.00008882088,0.00006882534,0.00003438041,0.00007050024,4.1467376e-7,0.0010357675,0.1872741],"genre_scores_gemma":[0.9950449,0.000028527209,0.0009393427,0.000021737067,0.000019302566,0.0000061682213,2.1237452e-7,0.00003306218,0.003906773],"study_design_codex":"observational","study_design_gemma":"not_applicable","domain_scores_codex":[0.99964935,2.2116562e-7,0.00005500559,0.0001026107,0.000051380834,0.00014141663],"domain_scores_gemma":[0.9999016,0.0000043861073,0.0000090656695,0.000047883244,0.000010900385,0.000026163018],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000027522514,0.00007826035,0.0000815309,0.00005413246,0.000013948518,0.000027629067,0.000075563454,0.000057334866,0.00008462566],"category_scores_gemma":[0.000010379136,0.00007299916,0.000012251156,0.00008002516,0.000025574924,0.00008659858,0.000037369282,0.00008055942,0.00029144995],"study_design_candidate":"not_applicable","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000020701813,0.000053947628,0.3852851,0.001334276,0.00018186009,0.0000072498437,0.003450649,0.00042093045,0.31492588,0.08164893,0.088286564,0.12438391],"study_design_scores_gemma":[0.0018878912,0.00024477064,0.059051227,0.00023976568,0.000044456076,0.00014208182,0.0037872936,0.08328233,0.14619933,0.013870898,0.6896594,0.0015905597],"about_ca_topic_score_codex":0.0000013376584,"about_ca_topic_score_gemma":8.722739e-8,"teacher_disagreement_score":0.60137284,"about_ca_system_score_codex":0.000009491342,"about_ca_system_score_gemma":9.471325e-7,"threshold_uncertainty_score":0.37460968},"labels":[],"label_agreement":null},{"id":"W2996572943","doi":"10.4071/2380-4505-2019.1.keynote000001","title":"Packaging Renaissance with Chiplets","year":2019,"lang":"en","type":"article","venue":"IMAPSource Proceedings","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":2,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Advanced Micro Devices (Canada)","funders":"","keywords":"Computer science; Emerging technologies; Manufacturing engineering; Chip; The Renaissance; Packaging engineering; Portfolio; Embedded system; Telecommunications; Engineering; Business; Mechanical engineering","score_opus":0.0025566705557414243,"score_gpt":0.1503647713055236,"score_spread":0.14780810074978215,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2996572943","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9063123,0.00024633843,0.0003995927,0.0001986784,0.00006664739,0.00014672872,0.0000012592261,0.0018915798,0.0907369],"genre_scores_gemma":[0.99745584,0.00001892829,0.001758155,0.000051206986,0.000042584044,0.000018153998,0.0000010739417,0.00004676011,0.0006073118],"study_design_codex":"observational","study_design_gemma":"not_applicable","domain_scores_codex":[0.999257,5.58405e-7,0.00010272362,0.00019141311,0.000140455,0.0003078324],"domain_scores_gemma":[0.9997699,0.000009163828,0.000026732998,0.00011620428,0.000037593883,0.00004040318],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000053938456,0.00015911614,0.00015259677,0.00008309062,0.000038544502,0.000055493114,0.00020376554,0.00006893134,0.000047324087],"category_scores_gemma":[0.000012363286,0.00013060792,0.000024651239,0.00024278586,0.00004855305,0.00021821656,0.0000384483,0.00021080772,0.000247162],"study_design_candidate":"observational","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00009158975,0.00007021092,0.69600254,0.0016610525,0.00029747697,0.000029337412,0.005229278,0.002414169,0.17557159,0.022177847,0.057632964,0.038821954],"study_design_scores_gemma":[0.003874294,0.0006564504,0.08398277,0.0015379079,0.00009885133,0.00046976382,0.0071862494,0.03405853,0.35393798,0.0049135606,0.50590205,0.003381616],"about_ca_topic_score_codex":0.0000017145223,"about_ca_topic_score_gemma":3.7102834e-7,"teacher_disagreement_score":0.6120198,"about_ca_system_score_codex":0.0000312351,"about_ca_system_score_gemma":0.0000043830155,"threshold_uncertainty_score":0.5326036},"labels":[],"label_agreement":null},{"id":"W2998372927","doi":"","title":"3D-IC design solution for modular integration of chiplet over silicon interposer","year":2019,"lang":"en","type":"preprint","venue":"HAL (Le Centre pour la Communication Scientifique Directe)","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Institut interdisciplinaire d'innovation technologique; Université de Sherbrooke","funders":"","keywords":"Modular design; Interposer; Computer science; Silicon; Embedded system; Computer architecture; Materials science; Optoelectronics; Operating system; Nanotechnology; Etching (microfabrication)","score_opus":0.01962926462946971,"score_gpt":0.22234142948914015,"score_spread":0.20271216485967045,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2998372927","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.099591106,0.0008743667,0.8938528,0.0004638966,0.00034320162,0.0008016671,0.00005928479,0.00050730543,0.0035064216],"genre_scores_gemma":[0.908,0.0003985562,0.090158254,0.000011992185,0.000013306332,0.00013759655,0.0003503422,0.000052739535,0.0008772434],"study_design_codex":"design_other","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9980672,0.00061760296,0.00046453357,0.00040177524,0.00019764942,0.000251263],"domain_scores_gemma":[0.99698347,0.0006151918,0.0002546663,0.0013868778,0.0007159897,0.000043824977],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.0018533069,0.0002862239,0.00037523775,0.00023057948,0.000074709686,0.00009356613,0.000741405,0.00043261726,0.00003593937],"category_scores_gemma":[0.00073210616,0.00029928188,0.00018323853,0.0001712754,0.000116481744,0.00013029361,0.00043092892,0.00045091295,0.0000141714345],"study_design_candidate":"simulation_or_modeling","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00010154377,0.00077888457,0.0011522139,0.0027920522,0.000706861,0.000001868878,0.014607552,0.06756336,0.38470432,0.069044665,0.011006115,0.44754058],"study_design_scores_gemma":[0.0003426345,9.82262e-7,0.0010643315,0.0012689168,0.00004339622,0.0000012540442,0.000055765522,0.7255355,0.26625687,0.0036539761,0.0014737167,0.00030264526],"about_ca_topic_score_codex":0.00016687172,"about_ca_topic_score_gemma":0.00021113582,"teacher_disagreement_score":0.80840886,"about_ca_system_score_codex":0.00014456682,"about_ca_system_score_gemma":0.00007623293,"threshold_uncertainty_score":0.99994594},"labels":[],"label_agreement":null},{"id":"W2999570571","doi":"10.1061/9780784481646.018","title":"Challenges Associated with Designing Large Diameter Feedermain Interconnections","year":2018,"lang":"en","type":"article","venue":"Pipelines 2018","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":true,"ca_institutions":"","funders":"","keywords":"Computer science","score_opus":0.035631870540257,"score_gpt":0.23467848116365908,"score_spread":0.19904661062340206,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2999570571","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.32557797,0.0035416146,0.58487344,0.0014349946,0.0017308426,0.00043653068,0.000032674492,0.0077816304,0.07459029],"genre_scores_gemma":[0.9957384,0.00018401415,0.0034124888,0.00005445662,0.00023818434,0.00002514483,0.0000059416325,0.00004043751,0.00030095648],"study_design_codex":"design_other","study_design_gemma":"not_applicable","domain_scores_codex":[0.9992927,0.000017445302,0.00013737862,0.00016215706,0.000082961975,0.00030737655],"domain_scores_gemma":[0.99956447,0.000082964056,0.000026602333,0.00021685046,0.000073842915,0.000035269382],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00014192291,0.0001513077,0.00015332026,0.00010460315,0.00009572374,0.000025810705,0.00014126518,0.00011792104,0.00008464018],"category_scores_gemma":[0.00015233543,0.000121269935,0.000032734868,0.00015754218,0.00009309778,0.00012929703,0.000039781058,0.0001307653,0.00018828503],"study_design_candidate":"not_applicable","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00021426048,0.0014019598,0.026832612,0.0005280226,0.0038012322,0.00016760659,0.022007255,0.0016986191,0.03112111,0.019503942,0.42580655,0.46691683],"study_design_scores_gemma":[0.012011516,0.005452136,0.05944457,0.0033240668,0.0008345369,0.00030416873,0.037274178,0.23483753,0.29004472,0.036360558,0.3121736,0.007938395],"about_ca_topic_score_codex":0.0000049769797,"about_ca_topic_score_gemma":0.00047475687,"teacher_disagreement_score":0.6701604,"about_ca_system_score_codex":0.000040133007,"about_ca_system_score_gemma":0.000008973206,"threshold_uncertainty_score":0.49452445},"labels":[],"label_agreement":null},{"id":"W3037681965","doi":"","title":"A wafer-level three dimensional chip stacking technology for high-performance microelectronics and MEMS","year":2001,"lang":"en","type":"article","venue":"","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Hatch (Canada)","funders":"","keywords":"Microelectronics; Microelectromechanical systems; Stacking; Wafer; Chip; Materials science; Engineering; Computer science; Optoelectronics; Electrical engineering; Physics","score_opus":0.014978711482621669,"score_gpt":0.20142646905848063,"score_spread":0.18644775757585896,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3037681965","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.96562004,0.0010950845,0.031048747,0.00046967302,0.000095057294,0.00017216001,0.000005502514,0.0010999308,0.00039382672],"genre_scores_gemma":[0.988429,0.00033016395,0.01093786,0.000029927573,0.000024033552,0.000042708103,0.0000052145833,0.000025150714,0.0001759026],"study_design_codex":"design_other","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99929106,8.593223e-7,0.00013164274,0.00015785838,0.000058667894,0.00035991348],"domain_scores_gemma":[0.99974203,0.000029946921,0.000014922323,0.00017126877,0.000021244066,0.000020586203],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000053887852,0.00013894479,0.0001498114,0.00014033729,0.00008216324,0.000013764137,0.00013199555,0.00016838813,0.000016335147],"category_scores_gemma":[0.00001352583,0.00011952044,0.000016453556,0.00018159302,0.00006556373,0.00008715235,0.000059655777,0.00016544454,0.000008444281],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00009492213,0.00008714257,0.030859862,0.0002857407,0.00035237437,0.000021355763,0.000068179856,0.0068455692,0.109429754,0.17913543,0.0035600364,0.6692596],"study_design_scores_gemma":[0.003407817,0.0008669472,0.019940468,0.00013678001,0.000077560224,0.00043261662,0.0001505559,0.23505521,0.6062321,0.10642274,0.025777757,0.0014994404],"about_ca_topic_score_codex":0.0000070383267,"about_ca_topic_score_gemma":0.00007511912,"teacher_disagreement_score":0.6677602,"about_ca_system_score_codex":0.000041981304,"about_ca_system_score_gemma":0.000012469284,"threshold_uncertainty_score":0.4873902},"labels":[],"label_agreement":null},{"id":"W3128753376","doi":"","title":"高架CPWとCPS(コプレーナ・ストリップ)直列スタブを使ったDC~70GHzの90nm 3D CMOS SPDT","year":2011,"lang":"ja","type":"article","venue":"International Microwave Symposium","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Carleton University","funders":"","keywords":"CMOS; Computer science; Electronic engineering; Electrical engineering; Optoelectronics; Materials science; Engineering","score_opus":0.017737635897954067,"score_gpt":0.21135568227893417,"score_spread":0.1936180463809801,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3128753376","genre_codex":"other","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.13567819,0.0031154826,0.013469808,0.002766999,0.01505617,0.0008766584,0.0004658037,0.0022028356,0.82636803],"genre_scores_gemma":[0.9774092,0.0011801027,0.009372949,0.00033989563,0.00092013774,0.00006134626,0.000100080506,0.00017455577,0.010441759],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99669427,0.00004907147,0.00094245886,0.0008268579,0.00056949235,0.0009178622],"domain_scores_gemma":[0.99826676,0.0000992404,0.00025337862,0.0008551927,0.00032426819,0.00020116338],"candidate_categories":["metaepi_narrow","insufficient_payload"],"consensus_categories":["insufficient_payload"],"category_scores_codex":[0.0002428479,0.000765246,0.0005570166,0.00056587846,0.00014682296,0.00019012069,0.0017159946,0.0006856542,0.0026711503],"category_scores_gemma":[0.00009343969,0.00082533614,0.0003772773,0.00034510653,0.00035479243,0.00054734387,0.0006011295,0.00089895725,0.004170956],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00033674634,0.0011621838,0.0083742,0.00045267926,0.0034814838,0.00095166214,0.008602118,0.00063144765,0.82978153,0.06060076,0.0612412,0.024384001],"study_design_scores_gemma":[0.0028638195,0.00045907538,0.0049987673,0.0008339107,0.00038343572,0.00061982934,0.0016234665,0.008016031,0.70483744,0.008353393,0.2641278,0.0028830122],"about_ca_topic_score_codex":0.00029472046,"about_ca_topic_score_gemma":0.00005196997,"teacher_disagreement_score":0.841731,"about_ca_system_score_codex":0.0005012769,"about_ca_system_score_gemma":0.00009174384,"threshold_uncertainty_score":0.99941975},"labels":[],"label_agreement":null},{"id":"W3140950050","doi":"","title":"3-D integration technology for realizing super chip","year":2008,"lang":"en","type":"article","venue":"","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Hatch (Canada)","funders":"","keywords":"Chip; Computer science; Telecommunications","score_opus":0.022257084503990117,"score_gpt":0.21385654497347595,"score_spread":0.19159946046948584,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3140950050","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.5074538,0.00040257548,0.43204874,0.00069125165,0.00016899663,0.0002394918,0.0000034955913,0.0058180513,0.053173576],"genre_scores_gemma":[0.97897357,0.00011865423,0.020393718,0.00001787468,0.00002045856,0.00004739038,0.0000048006436,0.000012416877,0.00041112272],"study_design_codex":"theoretical_or_conceptual","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9997003,8.4018967e-7,0.00007917435,0.00006921899,0.000026997292,0.00012343384],"domain_scores_gemma":[0.9998364,0.000013149651,0.0000045951097,0.00012047262,0.000016655205,0.000008761207],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00002066968,0.0000615687,0.0000719771,0.000115922914,0.000046304158,0.0000035369023,0.00008003613,0.00011630636,0.000018537086],"category_scores_gemma":[0.000035473826,0.00005092578,0.000021869659,0.00013087365,0.000039866485,0.000057770638,0.000011506381,0.00006950674,0.000020045529],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000009611445,0.000033326713,0.003995492,0.0000652533,0.00007216135,0.000011545346,0.00037846126,0.0008250449,0.1427942,0.5825822,0.06507478,0.20415792],"study_design_scores_gemma":[0.0006169877,0.00013762912,0.0017116764,0.000030441373,0.000012942037,0.00010683302,0.001699221,0.03586472,0.8554548,0.034340072,0.06956391,0.0004607488],"about_ca_topic_score_codex":0.0000045749234,"about_ca_topic_score_gemma":0.000011370995,"teacher_disagreement_score":0.7126606,"about_ca_system_score_codex":0.000017969494,"about_ca_system_score_gemma":0.0000036940148,"threshold_uncertainty_score":0.20766932},"labels":[],"label_agreement":null},{"id":"W3156265506","doi":"10.1504/ijcaet.2021.10037082","title":"Latency-optimised 3D multi-FPGA system with serial optical interface","year":2021,"lang":"en","type":"article","venue":"International Journal of Computer Aided Engineering and Technology","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Windsor","funders":"","keywords":"Field-programmable gate array; Computer science; Embedded system; Interface (matter); Latency (audio); Computer hardware; Operating system; Telecommunications","score_opus":0.005173150008264463,"score_gpt":0.19560572076039,"score_spread":0.19043257075212555,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3156265506","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.29979825,0.0006711673,0.69728464,0.0003585606,0.0012285134,0.000031740936,0.0000028625968,0.0005522276,0.00007202812],"genre_scores_gemma":[0.84545004,0.00009718684,0.15425876,0.000006461351,0.00015185622,0.0000024498345,0.0000012517206,0.000021911077,0.000010081888],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9991945,0.000005089474,0.0003306419,0.00012616396,0.0001655473,0.00017805147],"domain_scores_gemma":[0.9994317,0.00003855235,0.000059710506,0.00012808117,0.0002912228,0.00005070263],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00006714578,0.0001641648,0.00026920903,0.00036821776,0.000016532023,0.00005594477,0.00031648515,0.0001743631,0.000005584344],"category_scores_gemma":[0.000028543578,0.00014202473,0.000040819265,0.00018146253,0.000053527485,0.000111152556,0.00011273209,0.00040088658,0.0000036205142],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000066693,0.00008861943,0.0006152177,0.00016254956,0.0013758108,0.0025345942,0.00014408033,0.90096307,0.020132778,0.0071067787,0.00032151028,0.066488296],"study_design_scores_gemma":[0.0029251294,0.00030273522,0.0005488139,0.0007893079,0.000056334116,0.010892331,0.00023351957,0.8930139,0.08751349,0.0001085469,0.0031880871,0.0004278178],"about_ca_topic_score_codex":7.280496e-7,"about_ca_topic_score_gemma":7.3305546e-7,"teacher_disagreement_score":0.5456518,"about_ca_system_score_codex":0.00008107184,"about_ca_system_score_gemma":0.000028719707,"threshold_uncertainty_score":0.57916003},"labels":[],"label_agreement":null},{"id":"W3158793502","doi":"10.1109/iscas51556.2021.9401673","title":"Power Delivery for Silicon Interconnect Fabric","year":2021,"lang":"en","type":"article","venue":"","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":14,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McGill University","funders":"","keywords":"Decoupling capacitor; Topology (electrical circuits); Capacitor; Ripple; Electronic engineering; Network topology; Electrical engineering; Decoupling (probability); Interconnection; Voltage; Engineering; Interposer; Computer science; Materials science; Telecommunications","score_opus":0.00909530246295118,"score_gpt":0.19922859849768412,"score_spread":0.19013329603473295,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3158793502","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.85739475,0.0015773397,0.0663576,0.00023431718,0.00043776777,0.00009724704,0.0000062226554,0.0017018331,0.07219293],"genre_scores_gemma":[0.99677676,0.000058029338,0.0019348834,0.00007512286,0.0000123020955,0.000013299251,0.0000031899003,0.000011240582,0.0011151927],"study_design_codex":"design_other","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9997196,0.0000016103569,0.0000647861,0.00007671066,0.000024249759,0.00011301642],"domain_scores_gemma":[0.9997954,0.000042437478,0.0000033211013,0.00012284426,0.000023161789,0.000012841754],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0000180649,0.000055985925,0.00007075953,0.000027395068,0.000012976644,0.000012855033,0.00005890056,0.000052465617,0.00032045232],"category_scores_gemma":[0.000036899204,0.000050722145,0.000043125103,0.00006479995,0.000009064986,0.00004842678,0.000026087753,0.000044383953,0.000053267588],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000022654589,0.000119073375,0.0020041375,0.00037306396,0.00051949394,0.00011404113,0.0006509949,0.0029387386,0.24560131,0.114449665,0.23066153,0.4025453],"study_design_scores_gemma":[0.00054432993,0.0000822645,0.00088749937,0.000030383715,0.000016153752,0.00002776249,0.0019713424,0.016414233,0.82512724,0.0050718663,0.14943437,0.00039255904],"about_ca_topic_score_codex":0.0000015829079,"about_ca_topic_score_gemma":0.0000074100885,"teacher_disagreement_score":0.57952595,"about_ca_system_score_codex":0.000015738073,"about_ca_system_score_gemma":0.00000545716,"threshold_uncertainty_score":0.3508728},"labels":[],"label_agreement":null},{"id":"W3161882312","doi":"","title":"Advanced die-to-wafer 3D integration platform: Self-assembly technology","year":2011,"lang":"en","type":"article","venue":"","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Hatch (Canada)","funders":"","keywords":"Die (integrated circuit); Wafer; Engineering; Computer science; Mechanical engineering; Electrical engineering","score_opus":0.014560282663029658,"score_gpt":0.20610095722183763,"score_spread":0.19154067455880797,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3161882312","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.7020815,0.00018601966,0.17135927,0.00011978725,0.00033076302,0.00026486587,0.0000016570893,0.010255458,0.1154007],"genre_scores_gemma":[0.89916396,0.00007862128,0.100398816,0.000034329874,0.000010131606,0.00005682559,0.0000016148501,0.00002175744,0.00023394848],"study_design_codex":"design_other","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99939984,0.0000014083229,0.00014946719,0.00014394893,0.00006114779,0.0002441858],"domain_scores_gemma":[0.9996383,0.000008354126,0.000012835937,0.00027630973,0.00003109263,0.000033098575],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000033546898,0.00013981927,0.0001334239,0.00025492645,0.00003298938,0.000008361156,0.00020931069,0.00019875313,0.00007280131],"category_scores_gemma":[0.00002462931,0.00011423054,0.000024013685,0.00027497884,0.000019138544,0.00018173966,0.000059800528,0.00016636588,0.00040358465],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000023872866,0.00008913241,0.0013723293,0.000041277402,0.000109360466,0.000024988083,0.0012505219,0.00034289132,0.042256832,0.08704301,0.0025383914,0.8649074],"study_design_scores_gemma":[0.0004914884,0.00031518895,0.0032331378,0.000044680477,0.000024150244,0.000017161521,0.002195113,0.010496795,0.9496658,0.0136601105,0.019219164,0.0006372376],"about_ca_topic_score_codex":0.000008565248,"about_ca_topic_score_gemma":0.00005131129,"teacher_disagreement_score":0.90740895,"about_ca_system_score_codex":0.0000513792,"about_ca_system_score_gemma":0.0000062148806,"threshold_uncertainty_score":0.5187399},"labels":[],"label_agreement":null},{"id":"W3173173979","doi":"10.1109/newcas50681.2021.9462767","title":"Foster-based Transient Thermal Analysis of SiP for Thermomechanical Studies","year":2021,"lang":"en","type":"article","venue":"","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":14,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Polytechnique Montréal; Université du Québec en Outaouais","funders":"","keywords":"Transient (computer programming); Finite element method; Reliability (semiconductor); Thermal; Thermal analysis; Heat transfer; Coupling (piping); Computer science; Junction temperature; Thermal transfer; Materials science; System in package; Mechanical engineering; Temperature measurement; Layer (electronics); Electronic engineering; Structural engineering; Engineering; Mechanics; Composite material; Physics","score_opus":0.04558490358198759,"score_gpt":0.2765045196547829,"score_spread":0.23091961607279532,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3173173979","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.77263254,0.001531931,0.22324175,0.0004052246,0.00009291291,0.00011178038,0.000023321712,0.0003994047,0.0015611432],"genre_scores_gemma":[0.9961084,0.000034049328,0.00370966,0.00004301934,0.000005763467,0.000025261612,0.0000062411023,0.000008670424,0.000058899448],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99958247,0.000006178906,0.0001428098,0.0000930295,0.00006349328,0.000112044196],"domain_scores_gemma":[0.99963397,0.00011951662,0.000010778441,0.00016878505,0.000054955966,0.000011971286],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000053787408,0.000073121955,0.00024592716,0.00008289194,0.000014094251,0.000003808325,0.00006875292,0.000051479397,0.000073426694],"category_scores_gemma":[0.000028152304,0.000055553908,0.00017734786,0.00033658292,0.00002416741,0.000017498465,0.000013152751,0.000035181303,0.0000010068716],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000072618175,0.0003339492,0.0012152116,0.0007357138,0.019795911,0.000029339331,0.0014122303,0.2136119,0.6081379,0.016652253,0.0022666147,0.13573639],"study_design_scores_gemma":[0.00060204504,0.0001071966,0.0019225138,0.000019798501,0.0012057454,3.896898e-7,0.0020886164,0.21256797,0.78009707,0.00052429346,0.0006552436,0.00020912927],"about_ca_topic_score_codex":0.0000010047256,"about_ca_topic_score_gemma":0.000030048475,"teacher_disagreement_score":0.2234759,"about_ca_system_score_codex":0.0000128481515,"about_ca_system_score_gemma":0.000007588694,"threshold_uncertainty_score":0.22654226},"labels":[],"label_agreement":null},{"id":"W3188178661","doi":"10.1109/isca52012.2021.00014","title":"Pioneering Chiplet Technology and Design for the AMD EPYC™ and Ryzen™ Processor Families : Industrial Product","year":2021,"lang":"en","type":"article","venue":"","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":168,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Advanced Micro Devices (Canada)","funders":"","keywords":"Product (mathematics); Product design; Computer science; Manufacturing engineering; Computer architecture; Engineering; Mathematics","score_opus":0.03364821018964429,"score_gpt":0.2111666268012855,"score_spread":0.17751841661164122,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3188178661","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.7630498,0.019547258,0.20277457,0.007891214,0.00056364754,0.0016446142,0.000015073216,0.0033623578,0.0011515077],"genre_scores_gemma":[0.9903413,0.0008753057,0.008259938,0.000016424423,0.000066047265,0.00016343767,0.0000014252631,0.000020197813,0.00025590553],"study_design_codex":"design_other","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9994521,0.000004707347,0.000115419694,0.00018455648,0.00004844882,0.00019474977],"domain_scores_gemma":[0.99964434,0.00011277628,0.000012999913,0.00018072559,0.000032614134,0.00001655359],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00010217342,0.00012085747,0.00014216485,0.00010141924,0.000101152764,0.000041726867,0.000099520155,0.00013561065,0.000005560062],"category_scores_gemma":[0.00029666,0.00008381615,0.00001328075,0.00030660417,0.00011299647,0.000071586845,0.0000862506,0.00017300449,9.729832e-7],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000055393666,0.00005024519,0.005675996,0.0005610294,0.00043741526,0.000020782765,0.0008396889,0.0043502366,0.050957363,0.031742565,0.010890759,0.89441854],"study_design_scores_gemma":[0.002344307,0.00024021995,0.0020646348,0.00012225937,0.00014058873,0.00023381997,0.008519026,0.03347231,0.85919315,0.018166173,0.074633725,0.00086979644],"about_ca_topic_score_codex":0.0000021468297,"about_ca_topic_score_gemma":0.0000070371425,"teacher_disagreement_score":0.8935487,"about_ca_system_score_codex":0.00000990685,"about_ca_system_score_gemma":0.000020895179,"threshold_uncertainty_score":0.34179232},"labels":[],"label_agreement":null},{"id":"W3191072511","doi":"10.1109/ectc32696.2021.00034","title":"Direct Bonded Heterogeneous Integration (DBHi) Si Bridge","year":2021,"lang":"en","type":"article","venue":"","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":44,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"IBM (Canada)","funders":"","keywords":"Interconnection; System in package; Integrated circuit packaging; Thermocompression bonding; Reliability (semiconductor); Chip; Three-dimensional integrated circuit; Computer science; Wire bonding; Materials science; Package on package; Electronic packaging; Joins; Quad Flat No-leads package; Mechanical engineering; Electronic engineering; Engineering; Adhesive; Layer (electronics); Power (physics); Composite material","score_opus":0.014370833911843307,"score_gpt":0.2113010488287646,"score_spread":0.1969302149169213,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3191072511","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.72071904,0.0015545595,0.039836526,0.00025998085,0.0004996702,0.00009198116,0.0000071736877,0.004377299,0.23265374],"genre_scores_gemma":[0.9971255,0.00011941637,0.001287623,0.000051519906,0.000023416069,0.0000072196476,0.000011510095,0.000013059155,0.0013607563],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99964494,0.0000046916857,0.000085350584,0.00009503623,0.000053173968,0.00011683231],"domain_scores_gemma":[0.9997695,0.000015022161,0.0000054191514,0.0001717356,0.000020364796,0.000017929484],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000019238018,0.00007546666,0.000087056,0.0000279802,0.000019239329,0.000024596573,0.000057843405,0.00006503403,0.00016814508],"category_scores_gemma":[0.000029411607,0.00006679902,0.000037512218,0.000109796536,0.000012135987,0.000048719474,0.000024260138,0.00006764434,0.00009859582],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000009795717,0.00012074852,0.0016763309,0.00012646274,0.00030857034,0.0005171393,0.0004743088,0.010119202,0.44994172,0.016705118,0.07252415,0.44747645],"study_design_scores_gemma":[0.00008632707,0.000011237783,0.0009178252,0.00000913807,0.0000061614296,0.000030955594,0.00005175402,0.008998809,0.9792321,0.0004159999,0.010112391,0.00012733621],"about_ca_topic_score_codex":0.000008003008,"about_ca_topic_score_gemma":0.000055513166,"teacher_disagreement_score":0.5292904,"about_ca_system_score_codex":0.000025164705,"about_ca_system_score_gemma":0.0000063996367,"threshold_uncertainty_score":0.2723985},"labels":[],"label_agreement":null},{"id":"W3193194841","doi":"10.1109/ectc32696.2021.00075","title":"Plasma Activated Low-temperature Die-level Direct Bonding with Advanced Wafer Dicing Technologies for 3D Heterogeneous Integration","year":2021,"lang":"en","type":"article","venue":"","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":11,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"IBM (Canada)","funders":"","keywords":"Wafer dicing; Wafer; Materials science; Silicon oxide; Silicon; Diamond; Surface roughness; Plasma-enhanced chemical vapor deposition; Die preparation; Anodic bonding; Oxide; Substrate (aquarium); Nanotechnology; Composite material; Optoelectronics; Metallurgy; Silicon nitride","score_opus":0.01057879018053534,"score_gpt":0.2101449273442078,"score_spread":0.19956613716367247,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3193194841","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9659877,0.0005968949,0.02559536,0.00024309871,0.00018373349,0.00031405044,0.000023456461,0.0053343065,0.0017214218],"genre_scores_gemma":[0.95771873,0.00017100932,0.041249845,0.000016540465,0.000015885038,0.00008937971,0.00004262025,0.000050884017,0.0006451296],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9990975,0.000005887749,0.0001759297,0.00028984254,0.000105696,0.00032513373],"domain_scores_gemma":[0.9994764,0.0000888119,0.000029760664,0.00029501886,0.00008900959,0.00002102113],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000035343437,0.00025257884,0.00027070456,0.00012835022,0.00011479104,0.00006381416,0.00014107412,0.00025824076,0.000009758465],"category_scores_gemma":[0.00014360549,0.00018461767,0.000052462947,0.00031190683,0.000049918086,0.00021369901,0.00005420311,0.00025934036,0.000003617915],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000039197035,0.000018831719,0.00003329818,0.00008475872,0.00010691179,0.000036983456,0.00010555535,0.006607424,0.8814233,0.0005990722,0.00022186225,0.110722795],"study_design_scores_gemma":[0.00044520394,0.000083023595,0.000023735352,0.00019668475,0.000018588124,0.000027658902,0.0016251657,0.0068557174,0.9887989,0.00015307884,0.0014934501,0.00027879333],"about_ca_topic_score_codex":0.000002159312,"about_ca_topic_score_gemma":0.000084076884,"teacher_disagreement_score":0.110444,"about_ca_system_score_codex":0.000101387195,"about_ca_system_score_gemma":0.000019347126,"threshold_uncertainty_score":0.752849},"labels":[],"label_agreement":null},{"id":"W3201492657","doi":"","title":"RF Coils for Microimaging","year":2011,"lang":"en","type":"article","venue":"","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"National Research Council Institute for Biodiagnostics","funders":"","keywords":"Remote sensing; Geology","score_opus":0.0349802304844548,"score_gpt":0.19578714136968736,"score_spread":0.16080691088523258,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3201492657","genre_codex":"other","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.14853196,0.00062533,0.34008,0.000077274366,0.00031518194,0.00017834046,0.0000042969555,0.0036992247,0.5064884],"genre_scores_gemma":[0.9597174,0.000013994478,0.03978603,0.000025803392,0.000010345363,0.000013350195,5.990793e-7,0.000009328887,0.0004231288],"study_design_codex":"design_other","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99980307,2.4245375e-7,0.000043024735,0.00004114975,0.00001268991,0.00009983127],"domain_scores_gemma":[0.9998952,0.0000072998205,0.0000028102259,0.000079183395,0.000006450692,0.00000906442],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000017798133,0.000038739392,0.000041018593,0.000022581928,0.000011906944,0.0000040040745,0.000064693966,0.000024724626,0.000082810235],"category_scores_gemma":[0.000005496099,0.000033270826,0.000017649963,0.000025317539,0.000012676472,0.000036682373,0.000009654126,0.000025346924,0.00004344758],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00001734388,0.0000695351,0.009867828,0.00035518134,0.00021418079,0.000014879533,0.002335016,0.00009092083,0.16794267,0.2409808,0.2564479,0.32166374],"study_design_scores_gemma":[0.0003546582,0.000032859865,0.0023840512,0.000013256806,0.000012718131,0.0000064060832,0.00044812818,0.004186731,0.8950015,0.03205449,0.065216236,0.00028902266],"about_ca_topic_score_codex":0.000006334574,"about_ca_topic_score_gemma":0.0000029514747,"teacher_disagreement_score":0.8111855,"about_ca_system_score_codex":0.000005715384,"about_ca_system_score_gemma":0.0000012904903,"threshold_uncertainty_score":0.13567449},"labels":[],"label_agreement":null},{"id":"W4205878884","doi":"10.1007/978-3-642-27758-0_1178-3","title":"Packaging (and Wire Bonding)","year":2014,"lang":"en","type":"book-chapter","venue":"","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of British Columbia","funders":"","keywords":"Wire bonding; Materials science; Engineering; Electrical engineering","score_opus":0.008463014580646668,"score_gpt":0.17319218999858377,"score_spread":0.1647291754179371,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4205878884","genre_codex":"other","genre_gemma":"other","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"other","genre_consensus":"other","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.00006865157,0.0010231344,0.0036428347,0.00009854064,0.00014791737,0.00005073848,0.0000024375336,0.0016630474,0.9933027],"genre_scores_gemma":[0.08857176,0.00040125777,0.00074199,0.000038300415,0.000081182705,0.0000024980152,0.000005167876,0.00006799728,0.91008985],"study_design_codex":"theoretical_or_conceptual","study_design_gemma":"not_applicable","domain_scores_codex":[0.9995801,4.8522526e-7,0.0001021385,0.00012762412,0.000061939434,0.00012774112],"domain_scores_gemma":[0.9997363,0.000018600977,0.000015149402,0.00019598655,0.0000068791414,0.000027082164],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000027816313,0.00018649308,0.00019270595,0.00009363991,0.000024092635,0.000021098116,0.00008467623,0.00026774008,0.0002370996],"category_scores_gemma":[0.0000042243905,0.00016576068,0.000036089023,0.000006932588,0.000049743885,0.000020978137,0.00005494698,0.00023327311,0.00017157815],"study_design_candidate":"not_applicable","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[2.0736755e-7,1.9980055e-7,0.000018419794,0.000067577894,0.00003447133,0.0000055520622,0.0000103287775,0.0000056232466,0.000020060961,0.9305991,0.024825837,0.044412643],"study_design_scores_gemma":[0.000061677514,0.000009846669,0.000013195871,0.000105146195,0.000020060392,0.000011772836,0.000009150786,0.00050634664,0.00020015113,0.041626994,0.95714307,0.00029258218],"about_ca_topic_score_codex":0.0000011218847,"about_ca_topic_score_gemma":0.0000037171233,"teacher_disagreement_score":0.93231726,"about_ca_system_score_codex":0.000018571955,"about_ca_system_score_gemma":0.000002405938,"threshold_uncertainty_score":0.67595243},"labels":[],"label_agreement":null},{"id":"W4211180156","doi":"10.1007/978-3-540-29857-1_56","title":"Packaging and Reliability Issues in Micro/Nano Systems","year":2007,"lang":"en","type":"book-chapter","venue":"","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":2,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of British Columbia","funders":"","keywords":"Nanoelectromechanical systems; Microelectromechanical systems; Reliability (semiconductor); Microelectronics; Packaging engineering; Engineering; Packaging industry; Electronic packaging; Systems engineering; Manufacturing engineering; Nanotechnology; Mechanical engineering; Electrical engineering; Materials science","score_opus":0.01375966038484309,"score_gpt":0.21791951969016024,"score_spread":0.20415985930531716,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4211180156","genre_codex":"other","genre_gemma":"other","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"other","genre_consensus":"other","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.003016655,0.014803342,0.00071273075,0.00005728391,0.00032383742,0.0002530883,0.000008250988,0.0012407681,0.97958404],"genre_scores_gemma":[0.27006477,0.007540456,0.0036385222,0.000028408373,0.0001634361,0.000014485868,0.00001623555,0.00015745359,0.7183762],"study_design_codex":"theoretical_or_conceptual","study_design_gemma":"not_applicable","domain_scores_codex":[0.9992275,0.0000021530793,0.000267806,0.00021951363,0.00008480726,0.00019819131],"domain_scores_gemma":[0.9995802,0.00004101715,0.00002332697,0.00031140988,0.000017299959,0.000026746506],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00016063024,0.00023489949,0.0003321787,0.00020037382,0.000014742288,0.00002785774,0.00010745184,0.0004548466,0.00005463224],"category_scores_gemma":[0.00001193667,0.00021195452,0.00003277788,0.000023217039,0.000074002724,0.000048221413,0.000061752144,0.00032670665,0.00005138143],"study_design_candidate":"not_applicable","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000027845257,0.000043790915,0.01211213,0.007749051,0.00034513767,0.00049534504,0.00090068264,0.0026970785,0.002055372,0.8234043,0.055289965,0.09487929],"study_design_scores_gemma":[0.00035871603,0.000043260516,0.0006801244,0.0012356144,0.00003468341,0.00004430124,0.00031508494,0.0015716486,0.00203107,0.020520668,0.97191644,0.0012483881],"about_ca_topic_score_codex":0.000081961545,"about_ca_topic_score_gemma":0.000041584735,"teacher_disagreement_score":0.91662645,"about_ca_system_score_codex":0.000082666105,"about_ca_system_score_gemma":0.000005091996,"threshold_uncertainty_score":0.86432546},"labels":[],"label_agreement":null},{"id":"W4212833482","doi":"10.1002/047134608x.w8433","title":"Wafer‐Scale Integration","year":2022,"lang":"en","type":"other","venue":"Wiley Encyclopedia of Electrical and Electronics Engineering","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":12,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McGill University","funders":"","keywords":"Wafer; Interconnection; Scalability; Wafer-scale integration; System integration; Scale (ratio); Chip; Computer science; Key (lock); Systems engineering; Scaling; Chip-scale package; Integration platform; Embedded system; Nanotechnology; Engineering; Materials science; Telecommunications; Physics; Database; Operating system","score_opus":0.002490535453082054,"score_gpt":0.16697194370893756,"score_spread":0.1644814082558555,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4212833482","genre_codex":"other","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"other","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.004916295,0.11243043,0.02591137,0.00004994307,0.00048612937,0.00043676587,0.000023369792,0.0038616257,0.85188407],"genre_scores_gemma":[0.46476427,0.39665586,0.0141624715,0.00005677968,0.000908794,0.00043558003,0.00017182667,0.0023173261,0.12052708],"study_design_codex":"design_other","study_design_gemma":"not_applicable","domain_scores_codex":[0.99908435,0.0000062710974,0.00019670825,0.00018648838,0.0001428027,0.00038335702],"domain_scores_gemma":[0.9996965,0.000032533,0.00003373627,0.0001754163,0.000007503153,0.0000543004],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000053993288,0.00023637946,0.00028770984,0.00032995953,0.000022392023,0.000008503422,0.00016610626,0.00018713373,0.00034726821],"category_scores_gemma":[0.00002881469,0.00023865841,0.000054550954,0.00042211323,0.000021027246,0.00003941226,0.00004209093,0.0005040089,0.000004190212],"study_design_candidate":"not_applicable","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00002578858,0.00015907608,0.0008364849,0.0006753264,0.0005321592,0.000024192166,0.00028820313,0.008208048,0.0073038517,0.07843091,0.33668977,0.5668262],"study_design_scores_gemma":[0.00022236406,0.00019028172,0.00007962941,0.00005418939,0.000045789242,0.000019308616,0.000012612612,0.030432183,0.0010864021,0.0004978708,0.96688104,0.00047833685],"about_ca_topic_score_codex":0.0000104684805,"about_ca_topic_score_gemma":0.000010165879,"teacher_disagreement_score":0.731357,"about_ca_system_score_codex":0.00008871416,"about_ca_system_score_gemma":0.000021432039,"threshold_uncertainty_score":0.9732207},"labels":[],"label_agreement":null},{"id":"W4220847230","doi":"10.1109/isscc42614.2022.9731799","title":"F4: Paving the Way to 200Gb/s Transceivers","year":2022,"lang":"en","type":"article","venue":"2022 IEEE International Solid- State Circuits Conference (ISSCC)","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of British Columbia","funders":"","keywords":"Transceiver; Ethernet; Leverage (statistics); Computer science; Chip; Electronic engineering; Embedded system; Computer hardware; Engineering; Telecommunications; Wireless","score_opus":0.030229581357844086,"score_gpt":0.25705179304856957,"score_spread":0.22682221169072547,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4220847230","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.87706286,0.0002964731,0.04492632,0.004732398,0.0067432052,0.00084589154,0.0009654801,0.0016031418,0.06282424],"genre_scores_gemma":[0.99662787,0.00017463525,0.00003306518,0.00035688395,0.0000858464,0.00022550308,0.00003778478,0.000041165764,0.0024172396],"study_design_codex":"simulation_or_modeling","study_design_gemma":"not_applicable","domain_scores_codex":[0.99822325,0.000043432472,0.00033519248,0.00033552945,0.0006272315,0.000435397],"domain_scores_gemma":[0.9993236,0.000096060205,0.000057211582,0.00032991075,0.000101784724,0.00009140515],"candidate_categories":["insufficient_payload"],"consensus_categories":[],"category_scores_codex":[0.00024382872,0.00024028674,0.00020826998,0.00026186235,0.00031447262,0.00012627358,0.0012798079,0.00005035377,0.0028522327],"category_scores_gemma":[0.000043008637,0.00022456206,0.000108099244,0.0004098192,0.00008110196,0.00018939203,0.00010561638,0.0005814498,0.0001692138],"study_design_candidate":"not_applicable","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0000465962,0.00017661123,0.0017373094,0.000063804066,0.0008378386,0.00023986971,0.015325917,0.48221087,0.110673346,0.020076726,0.06886528,0.29974583],"study_design_scores_gemma":[0.0027614292,0.0005980624,0.022369636,0.0001821496,0.00014305642,0.00025269523,0.023855804,0.14709888,0.07788216,0.024808895,0.6967968,0.003250455],"about_ca_topic_score_codex":0.00009137042,"about_ca_topic_score_gemma":0.000085927575,"teacher_disagreement_score":0.6279315,"about_ca_system_score_codex":0.00031119722,"about_ca_system_score_gemma":0.000051747887,"threshold_uncertainty_score":0.9980593},"labels":[],"label_agreement":null},{"id":"W4225552373","doi":"10.1109/jmems.2022.3165716","title":"Exploring Ru Compatibility With Al-Ge Eutectic Wafer Bonding","year":2022,"lang":"en","type":"article","venue":"Journal of Microelectromechanical Systems","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Dalsa Corporation; Université de Sherbrooke","funders":"Natural Sciences and Engineering Research Council of Canada; Mitacs","keywords":"Eutectic system; Materials science; Wetting; Dissolution; Compatibility (geochemistry); Alloy; Ternary operation; Eutectic bonding; Metallurgy; Wafer; Melting temperature; Chemical engineering; Nanotechnology; Composite material","score_opus":0.04613955810319353,"score_gpt":0.207922286488384,"score_spread":0.16178272838519048,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4225552373","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.98278326,0.001417273,0.014147381,0.00019072507,0.0008812969,0.00017909762,0.0000050390013,0.00025850718,0.00013741067],"genre_scores_gemma":[0.9992683,0.00007107614,0.00043480485,0.000023848208,0.000090397865,0.000034798755,9.727868e-7,0.000041755455,0.000034074605],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99832046,0.00009063569,0.0005933469,0.00015887283,0.00042914113,0.00040756416],"domain_scores_gemma":[0.99931544,0.000091173926,0.00019723154,0.00023868373,0.000066668144,0.00009080004],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0007133935,0.00018809883,0.00047910874,0.00022378653,0.0001657952,0.000049122526,0.00039871584,0.000045972072,0.000037124733],"category_scores_gemma":[0.000025347828,0.00015233847,0.00011837768,0.0004552511,0.000021239754,0.00023465551,0.000089280686,0.000982382,0.000005660352],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00026069226,0.00029931907,0.0006593665,0.00029433912,0.0006709268,0.0003792335,0.00041568693,0.01721704,0.9645982,0.0062953527,0.004302518,0.0046073245],"study_design_scores_gemma":[0.013729007,0.03228408,0.0027994642,0.0016719816,0.00095052057,0.041752715,0.02083694,0.090115845,0.44428304,0.0057540755,0.34066537,0.0051569827],"about_ca_topic_score_codex":0.000019742547,"about_ca_topic_score_gemma":0.0000032475002,"teacher_disagreement_score":0.5203152,"about_ca_system_score_codex":0.0006108114,"about_ca_system_score_gemma":0.000043644293,"threshold_uncertainty_score":0.62121826},"labels":[],"label_agreement":null},{"id":"W4229670833","doi":"10.1149/ma2005-01/45/1763","title":"3-D Chip Integration Technology for Microsystems","year":2006,"lang":"en","type":"article","venue":"ECS Meeting Abstracts","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Infineon Technologies (Canada)","funders":"","keywords":"Microsystem; Chip; Computer science; Embedded system; Nanotechnology; Materials science; Telecommunications","score_opus":0.008502181136005338,"score_gpt":0.2083179367201587,"score_spread":0.19981575558415335,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4229670833","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9196432,0.00070357736,0.0015149487,0.00018474512,0.00046204173,0.00022471901,0.000008488724,0.002008213,0.075250044],"genre_scores_gemma":[0.9934802,0.000007180721,0.0060869073,0.0000044925087,0.0001437152,0.000050909868,0.00001535872,0.000027733277,0.00018348575],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99932474,0.0000026933421,0.00024480035,0.00012963472,0.000056006764,0.00024215423],"domain_scores_gemma":[0.99969035,0.000053995158,0.000050573137,0.00015673753,0.000034740424,0.000013628705],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0001387488,0.00012003851,0.00012813428,0.0001435137,0.00006827414,0.000032111297,0.00013050035,0.0002045944,0.0000014769124],"category_scores_gemma":[0.00011444737,0.00011565615,0.000036394515,0.00014551387,0.000032836488,0.0000542496,0.000013101839,0.00014559446,0.000035784862],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0000037874975,0.00002433208,0.0010031057,0.00011760421,0.000017761775,0.00000513128,0.000041026142,0.065917715,0.9184332,0.0011146206,0.008490855,0.004830856],"study_design_scores_gemma":[0.00018566952,0.00002169776,0.0013142667,0.00009748922,0.000007687669,0.000011685798,0.00013655474,0.0047664037,0.9710895,0.0045838063,0.017617347,0.00016789354],"about_ca_topic_score_codex":0.000054800745,"about_ca_topic_score_gemma":0.00004636977,"teacher_disagreement_score":0.07506656,"about_ca_system_score_codex":0.00004225871,"about_ca_system_score_gemma":0.0000067058063,"threshold_uncertainty_score":0.47163206},"labels":[],"label_agreement":null},{"id":"W4230855017","doi":"10.1109/itc.2013.6917153","title":"A test probe for TSV using resonant inductive coupling","year":2013,"lang":"en","type":"article","venue":"","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":2,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Windsor","funders":"","keywords":"Coupling (piping); Inductive coupling; Materials science; Inductive sensor; Electronic engineering; RLC circuit; Electrical engineering; Optoelectronics; Engineering; Voltage; Capacitor; Composite material","score_opus":0.02624421383172004,"score_gpt":0.225816015112392,"score_spread":0.19957180128067195,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4230855017","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.64623433,0.00022590086,0.34847888,0.00013767096,0.00014977386,0.00070858205,0.000004036663,0.0015159028,0.0025449358],"genre_scores_gemma":[0.9397864,0.000008220157,0.059844326,0.000011451442,0.00003718723,0.00008920827,8.772882e-7,0.000019742023,0.00020258909],"study_design_codex":"bench_or_experimental","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9995975,4.7693686e-7,0.00009197411,0.0000892918,0.000040020484,0.00018077131],"domain_scores_gemma":[0.99977237,0.000053677944,0.000010380516,0.00010759961,0.000037251135,0.000018720672],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000031274074,0.00007825671,0.00008576986,0.000044474706,0.000040434817,0.000023689103,0.00007555668,0.000074149095,0.000037674658],"category_scores_gemma":[0.00006491499,0.000062013554,0.000022271943,0.000081141356,0.000023510795,0.00012218737,0.000025124426,0.00007428561,0.000028275785],"study_design_candidate":"simulation_or_modeling","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000008187094,0.00015120879,0.015431062,0.00047268675,0.00019886604,0.0000065069653,0.0009538565,0.017772382,0.80172735,0.028064592,0.017222732,0.11799054],"study_design_scores_gemma":[0.00023253416,0.00004931025,0.0010832403,0.000040656443,0.000010227239,0.000004200228,0.000890489,0.92872185,0.059708104,0.0066595343,0.0023717205,0.00022814995],"about_ca_topic_score_codex":0.000053168016,"about_ca_topic_score_gemma":0.000004488273,"teacher_disagreement_score":0.91094947,"about_ca_system_score_codex":0.00003748475,"about_ca_system_score_gemma":0.000007650222,"threshold_uncertainty_score":0.25288394},"labels":[],"label_agreement":null},{"id":"W4232333006","doi":"10.1149/ma2014-02/34/1750","title":"Combined Surface-Activated Bonding (SAB) Technologies for New Approach to Low Temperature Wafer Bonding","year":2014,"lang":"en","type":"article","venue":"ECS Meeting Abstracts","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Optech (Canada)","funders":"","keywords":"Anodic bonding; X-ray photoelectron spectroscopy; Wafer; Materials science; Direct bonding; Surface modification; Wafer bonding; Oxide; Silicon; Silicon oxide; Chemical engineering; Plasma activation; Nanotechnology; Layer (electronics); Metallurgy; Plasma; Silicon nitride","score_opus":0.014640691213208873,"score_gpt":0.22071488587272828,"score_spread":0.2060741946595194,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4232333006","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9411921,0.00012414687,0.000671909,0.00084354135,0.00047392384,0.00057411654,0.000008572949,0.006404567,0.04970714],"genre_scores_gemma":[0.96322405,0.0000075557145,0.03505886,0.000032362263,0.00010222744,0.00004052471,0.000024898718,0.00009888479,0.0014106132],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99821025,0.000013211658,0.00040402784,0.0004496419,0.00020159635,0.00072126073],"domain_scores_gemma":[0.9989833,0.0002644239,0.0000913917,0.0004917231,0.0000563087,0.00011282511],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.00044084326,0.00038409303,0.00042010064,0.00022386,0.00022121884,0.00016534256,0.00047928686,0.0004996983,0.0000033046613],"category_scores_gemma":[0.0011844869,0.00036742294,0.00009233551,0.00049926597,0.00004828713,0.00018706259,0.00011489,0.00054136646,0.00005493559],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000026341524,0.00004432914,0.00029483167,0.0002334759,0.0000660678,0.0000024569242,0.00023701192,0.21118395,0.75484586,0.0012551618,0.029835932,0.0019745862],"study_design_scores_gemma":[0.0005993853,0.00006786452,0.00053411385,0.00028253943,0.000021807633,0.000005625163,0.0008287319,0.0049725277,0.97101456,0.0013895847,0.019718261,0.0005649777],"about_ca_topic_score_codex":0.000026629195,"about_ca_topic_score_gemma":0.0000024452029,"teacher_disagreement_score":0.21616873,"about_ca_system_score_codex":0.00012166373,"about_ca_system_score_gemma":0.000022291144,"threshold_uncertainty_score":0.99987775},"labels":[],"label_agreement":null},{"id":"W4233090952","doi":"10.1109/test.2014.7035367","title":"A test probe for TSV using resonant inductive coupling","year":2014,"lang":"en","type":"article","venue":"","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Windsor","funders":"","keywords":"Coupling (piping); Inductive coupling; Materials science; Electronic engineering; Inductive sensor; Computer science; Electrical engineering; Engineering; Composite material","score_opus":0.02408400010588161,"score_gpt":0.23081054505806617,"score_spread":0.20672654495218457,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4233090952","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.20378628,0.00008448253,0.7920244,0.00005885221,0.00012412349,0.0002250758,0.0000026717055,0.0010620254,0.0026321076],"genre_scores_gemma":[0.94220763,0.0000049203604,0.05756826,0.000011808819,0.000056971097,0.00002388463,8.8406455e-7,0.000019213638,0.00010643913],"study_design_codex":"bench_or_experimental","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9996141,7.962508e-7,0.00008664218,0.00009282449,0.00004093534,0.0001646661],"domain_scores_gemma":[0.9997512,0.00008187566,0.000010892061,0.000115791125,0.000023808712,0.000016422093],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00007271777,0.00007558985,0.00009192953,0.000043390675,0.00004350463,0.000014111025,0.0000750569,0.000072378476,0.0000066273615],"category_scores_gemma":[0.00013336272,0.000061743114,0.00002266788,0.00007384889,0.000022853555,0.000058809757,0.000022602448,0.0000717002,0.000006777212],"study_design_candidate":"simulation_or_modeling","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000027483842,0.00017335925,0.017979592,0.0007380492,0.00020548995,0.00000581035,0.0010421458,0.054780103,0.55787665,0.15895557,0.0065281447,0.20168759],"study_design_scores_gemma":[0.00020483231,0.000050519673,0.00030717484,0.000032130993,0.000009490293,0.0000026298544,0.00022679471,0.94227415,0.04472715,0.004723565,0.0072845165,0.00015707043],"about_ca_topic_score_codex":0.000010855834,"about_ca_topic_score_gemma":0.000005818691,"teacher_disagreement_score":0.887494,"about_ca_system_score_codex":0.000030666626,"about_ca_system_score_gemma":0.0000058856594,"threshold_uncertainty_score":0.2517811},"labels":[],"label_agreement":null},{"id":"W4234889040","doi":"10.1515/iupac.83.0418","title":"Miniaturization","year":2016,"lang":"en","type":"dataset","venue":"IUPAC Standards Online","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McMaster University","funders":"","keywords":"Glossary; Context (archaeology); Computer science; Multidisciplinary approach; Process (computing); Field (mathematics); Data science; Management science; Engineering; Sociology; Biology; Linguistics; Mathematics","score_opus":0.007812581117065988,"score_gpt":0.3337545004177718,"score_spread":0.3259419193007058,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4234889040","genre_codex":"dataset","genre_gemma":"dataset","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"dataset","genre_consensus":"dataset","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.00007548664,0.0011681159,0.0010827743,0.00012697662,0.0009576682,0.00012208345,0.99553066,0.00084246014,0.00009377824],"genre_scores_gemma":[0.00008048365,0.0023046713,0.00009977604,0.000031421856,0.0004121671,0.000010673347,0.99686116,0.000041232393,0.00015839183],"study_design_codex":"not_applicable","study_design_gemma":"not_applicable","domain_scores_codex":[0.99888176,0.00000913592,0.0002442352,0.00020653666,0.00038635082,0.0002719965],"domain_scores_gemma":[0.9992188,0.00003072081,0.000052133764,0.000547754,0.00010172245,0.000048846632],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00009477819,0.00029128382,0.00032143574,0.00018785147,0.0000472025,0.000042574316,0.00032149695,0.0005029977,0.0008620835],"category_scores_gemma":[0.00016693248,0.00022319709,0.000071992166,0.00013922407,0.00008994278,0.00006587604,0.000071722854,0.000319599,0.0000052550054],"study_design_candidate":"not_applicable","study_design_consensus":"not_applicable","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000005625999,0.000015340318,0.0000015813324,0.00008846852,0.00005163976,0.000015827783,0.0000027889507,0.000014597118,0.000011884571,0.00001860583,0.99376184,0.006011822],"study_design_scores_gemma":[0.0002406896,0.00003785441,0.000010601177,0.0001765226,0.000037363385,0.000004942219,0.00000733228,0.000023710856,0.00012383358,0.00023272936,0.9988119,0.0002925471],"about_ca_topic_score_codex":0.0000057977486,"about_ca_topic_score_gemma":0.00007641263,"teacher_disagreement_score":0.0057192747,"about_ca_system_score_codex":0.00021175419,"about_ca_system_score_gemma":0.00011412853,"threshold_uncertainty_score":0.94392097},"labels":[],"label_agreement":null},{"id":"W4238285499","doi":"10.1149/ma2015-02/19/879","title":"Electrografted P4VP as Dielectric in High Aspect Ratio TSV: Surface Preparation and Thermomechanical Consideration  ","year":2015,"lang":"en","type":"article","venue":"ECS Meeting Abstracts","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":true,"ca_institutions":"Institut National de la Recherche Scientifique; Université de Sherbrooke","funders":"","keywords":"Materials science; Dielectric; Through-silicon via; Composite material; Silicon; Polymer; Substrate (aquarium); Deposition (geology); Low-k dielectric; Layer (electronics); Modulus; Dielectric loss; Aspect ratio (aeronautics); Optoelectronics","score_opus":0.014146375562901398,"score_gpt":0.23652127764839587,"score_spread":0.22237490208549446,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4238285499","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.98192436,0.00078882003,0.00010239866,0.00017250648,0.00010597357,0.00020181356,6.4237076e-7,0.000647837,0.016055662],"genre_scores_gemma":[0.9987751,0.000058061174,0.0010309939,0.000016649265,0.00003790508,0.000012201767,0.000009291598,0.000021068978,0.000038725648],"study_design_codex":"simulation_or_modeling","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99911,0.00003428144,0.0002668328,0.00018891774,0.0001465626,0.00025343423],"domain_scores_gemma":[0.9995842,0.00013006905,0.00005240515,0.0001317976,0.000043088596,0.00005842559],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0003845747,0.00014232761,0.00016185902,0.000087619854,0.000043333486,0.00007580521,0.00006174936,0.00015748173,0.000004208067],"category_scores_gemma":[0.00053605053,0.00014308593,0.000015471187,0.00023365319,0.000020915133,0.00016093886,0.000017531485,0.00024246424,0.000029393286],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00012135537,0.000119223514,0.0035642085,0.00006339883,0.000094289426,0.00009445657,0.0013836893,0.5243999,0.46240228,0.0026135691,0.002083909,0.003059756],"study_design_scores_gemma":[0.0011804679,0.00042411583,0.0138313295,0.00007956183,0.000029659279,0.000059700127,0.0002497293,0.11267943,0.85580117,0.014805612,0.00035778413,0.000501448],"about_ca_topic_score_codex":0.00021171285,"about_ca_topic_score_gemma":0.00017410767,"teacher_disagreement_score":0.41172045,"about_ca_system_score_codex":0.00009523878,"about_ca_system_score_gemma":0.000045595236,"threshold_uncertainty_score":0.58348745},"labels":[],"label_agreement":null},{"id":"W4239076751","doi":"10.1007/978-1-4020-8021-0_16","title":"MUSiC® Process","year":2004,"lang":"en","type":"book-chapter","venue":"","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Simon Fraser University","funders":"","keywords":"Silicon carbide; Materials science; Surface micromachining; Process (computing); Computer science; Composite material; Fabrication; Programming language","score_opus":0.014077324536999933,"score_gpt":0.18634324004941577,"score_spread":0.17226591551241582,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4239076751","genre_codex":"other","genre_gemma":"other","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"other","genre_consensus":"other","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.000025441204,0.00052740687,0.00082062674,0.000025086769,0.00016376989,0.000081867394,0.0000043667355,0.0027380057,0.99561346],"genre_scores_gemma":[0.110589504,0.00031337782,0.00064630515,0.00004903951,0.000116273855,0.000010821048,0.000012797171,0.00010729054,0.88815457],"study_design_codex":"theoretical_or_conceptual","study_design_gemma":"theoretical_or_conceptual","domain_scores_codex":[0.99959904,1.2324526e-7,0.000097798766,0.00010940795,0.00007985626,0.00011379303],"domain_scores_gemma":[0.9997618,0.000003973998,0.0000117743075,0.00018814931,0.000015768197,0.00001852124],"candidate_categories":["insufficient_payload"],"consensus_categories":[],"category_scores_codex":[0.000009370398,0.00017578021,0.00015074063,0.00007163965,0.0000124261705,0.0000096778995,0.00014439158,0.00032633363,0.002127977],"category_scores_gemma":[0.0000023205207,0.00015379609,0.000045088822,0.000010897431,0.000034325403,0.00002958273,0.000020665026,0.00023561882,0.0006213302],"study_design_candidate":"theoretical_or_conceptual","study_design_consensus":"theoretical_or_conceptual","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[4.5107666e-7,0.0000017391679,8.6278254e-7,0.00019464573,0.000056476936,0.00002437461,0.000033418604,0.00090820616,0.0000061538144,0.9688855,0.009034399,0.020853788],"study_design_scores_gemma":[0.00014347064,0.000022794356,0.000004009567,0.00020653023,0.000028520606,0.000010609691,0.000024216662,0.00012751247,0.0011555793,0.6648701,0.33282992,0.0005767386],"about_ca_topic_score_codex":0.0000012363577,"about_ca_topic_score_gemma":0.000005525281,"teacher_disagreement_score":0.32379553,"about_ca_system_score_codex":0.000043265234,"about_ca_system_score_gemma":0.000015600775,"threshold_uncertainty_score":0.9987842},"labels":[],"label_agreement":null},{"id":"W4240192342","doi":"10.1149/ma2015-02/19/877","title":"Combined Surface-Activated Bonding Technique for Low-Temperature Cu/SiO<sub>2</sub> Hybrid Bonding","year":2015,"lang":"en","type":"article","venue":"ECS Meeting Abstracts","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Optech (Canada)","funders":"","keywords":"Anodic bonding; Materials science; X-ray photoelectron spectroscopy; Direct bonding; Annealing (glass); Surface roughness; Wafer bonding; Wafer; Chemical engineering; Composite material; Nanotechnology","score_opus":0.014994944081556874,"score_gpt":0.22414715180215916,"score_spread":0.20915220772060228,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4240192342","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.98587584,0.00021982132,0.00015467856,0.00019047709,0.00073166145,0.0007030762,0.000029825116,0.0029952517,0.009099371],"genre_scores_gemma":[0.9944271,0.000019110657,0.0049870573,0.000024177303,0.00013833628,0.00009418846,0.000063050946,0.00014034157,0.00010662809],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9980409,0.000023713834,0.0005157059,0.00039825207,0.00027795605,0.0007434382],"domain_scores_gemma":[0.99886876,0.00023020197,0.00015708282,0.00040307266,0.0001429975,0.00019785318],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.00074425724,0.00042349813,0.0004361042,0.00019641765,0.00019889475,0.0001420755,0.00033517292,0.00037160385,0.0000019871043],"category_scores_gemma":[0.00077701587,0.00043731983,0.000114302915,0.0003573452,0.00006305833,0.00030532933,0.00009270363,0.0006783722,0.00003675268],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000027465736,0.000032272757,0.00015556336,0.00014668015,0.000042702908,0.000045497483,0.00009002766,0.036552563,0.95154995,0.00007387969,0.011152802,0.0001306025],"study_design_scores_gemma":[0.00065387733,0.00008058757,0.00022261955,0.0004520374,0.000022511658,0.000033209515,0.00024560172,0.0011643281,0.99363273,0.0009894941,0.0019896885,0.0005132832],"about_ca_topic_score_codex":0.000017384016,"about_ca_topic_score_gemma":0.000003265042,"teacher_disagreement_score":0.04208282,"about_ca_system_score_codex":0.00024256583,"about_ca_system_score_gemma":0.00005721728,"threshold_uncertainty_score":0.99980783},"labels":[],"label_agreement":null},{"id":"W4244503819","doi":"10.1149/ma2006-02/30/1368","title":"Sequential Plasma Activation Process for Silicon Direct Bonding","year":2006,"lang":"en","type":"article","venue":"ECS Meeting Abstracts","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McMaster University","funders":"","keywords":"Direct bonding; Plasma activation; Plasma; Silicon; Process (computing); Materials science; Nanotechnology; Computer science; Optoelectronics; Operating system; Physics; Nuclear physics","score_opus":0.01691715506375815,"score_gpt":0.24138333523564082,"score_spread":0.22446618017188266,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4244503819","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.87636,0.000036775473,0.00008633143,0.000058156624,0.00021462052,0.000156864,0.000004974688,0.001223891,0.121858396],"genre_scores_gemma":[0.99875885,0.0000019109611,0.0006916992,0.0000042158545,0.00021953155,0.00004380578,0.000021608872,0.000034512817,0.00022387826],"study_design_codex":"simulation_or_modeling","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9992602,0.0000036013244,0.00021187431,0.00015250359,0.0001047616,0.0002670893],"domain_scores_gemma":[0.999672,0.000111933754,0.00006296927,0.00010085425,0.00003139559,0.000020837217],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00014261297,0.00013042623,0.00012291168,0.00008280197,0.000096949654,0.0000450944,0.000080189806,0.00012557948,0.0000031619354],"category_scores_gemma":[0.0001651937,0.00013583469,0.000039954615,0.000105956395,0.000019449879,0.00015670212,0.000010554134,0.000120496006,0.000011277427],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000012017709,0.000026129273,0.00064072356,0.00022679364,0.000023666295,0.0000057096067,0.00009767063,0.64818424,0.3471239,0.00014598072,0.0021551084,0.0013580513],"study_design_scores_gemma":[0.00022435925,0.00001467436,0.001703127,0.00009198176,0.000010344168,0.000004022309,0.00008409145,0.012921392,0.9804028,0.00094258855,0.0034260666,0.0001745042],"about_ca_topic_score_codex":0.000039279304,"about_ca_topic_score_gemma":0.00000935172,"teacher_disagreement_score":0.63526285,"about_ca_system_score_codex":0.000058085203,"about_ca_system_score_gemma":0.000011861415,"threshold_uncertainty_score":0.5539178},"labels":[],"label_agreement":null},{"id":"W4245768727","doi":"10.1149/ma2008-02/33/2224","title":"Bonding of Elastically Strain-Relaxed GaAs/InGaAs/GaAs Heterostructures to GaAs(001)","year":2008,"lang":"en","type":"article","venue":"ECS Meeting Abstracts","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Simon Fraser University","funders":"","keywords":"Heterojunction; Materials science; Strain (injury); Gallium arsenide; Optoelectronics; Condensed matter physics; Physics; Medicine; Internal medicine","score_opus":0.01475566748715154,"score_gpt":0.21840502737783185,"score_spread":0.2036493598906803,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4245768727","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.954168,0.00022371352,0.0001297703,0.0000922629,0.00051541865,0.00018152318,0.000036314785,0.0011048302,0.04354814],"genre_scores_gemma":[0.9905262,0.000029804984,0.008964826,0.0000417424,0.00014222135,0.000011393381,0.000012273754,0.00007402062,0.00019752409],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9979685,0.000017945535,0.0006494347,0.00033825095,0.0003695995,0.00065628625],"domain_scores_gemma":[0.998941,0.0002704134,0.00012575771,0.00040563394,0.00007553303,0.00018166155],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.00023485546,0.00034411627,0.0004199111,0.00024235687,0.00016330618,0.000036912446,0.00039199757,0.0002751636,0.00004557719],"category_scores_gemma":[0.0008316458,0.00034236052,0.00010454169,0.00029203694,0.00014567195,0.00012378806,0.000107564505,0.000493578,0.000099150435],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000026651081,0.000064755455,0.0026074245,0.00021238976,0.00011379129,0.00017903834,0.0010031657,0.24002507,0.74839175,0.00024710648,0.005358946,0.0017698912],"study_design_scores_gemma":[0.001100473,0.00035518382,0.14045155,0.000696454,0.00006638692,0.00024027134,0.0006002635,0.0021827861,0.8440189,0.0013185355,0.0077317157,0.0012375041],"about_ca_topic_score_codex":0.0000428324,"about_ca_topic_score_gemma":0.000010628901,"teacher_disagreement_score":0.23784229,"about_ca_system_score_codex":0.00007858922,"about_ca_system_score_gemma":0.00003071189,"threshold_uncertainty_score":0.99990284},"labels":[],"label_agreement":null},{"id":"W4246545886","doi":"10.1109/mwsym.1998.700959","title":"Analysis of microvia interconnects","year":2002,"lang":"en","type":"article","venue":"","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":7,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Toronto","funders":"Information Technology Research Centre","keywords":"Materials science; Dielectric; Interconnection; Finite-difference time-domain method; Electronic engineering; Low-k dielectric; Electrical engineering; Engineering; Optoelectronics; Telecommunications; Optics; Physics","score_opus":0.01071145507284366,"score_gpt":0.17275727136734695,"score_spread":0.1620458162945033,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4246545886","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.90566343,0.00042788315,0.00938265,0.000037957485,0.000041137464,0.000018005114,0.0000019158754,0.00054072327,0.083886296],"genre_scores_gemma":[0.9988547,0.000052377418,0.00066050654,0.000009129243,0.0000020670707,8.4035827e-7,6.0493477e-7,0.0000030794445,0.00041670422],"study_design_codex":"design_other","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99982244,9.633605e-7,0.00006431309,0.00003555697,0.000021629301,0.000055088094],"domain_scores_gemma":[0.9998623,0.000011694662,0.000004973157,0.00010817625,0.0000057550324,0.0000071098207],"candidate_categories":["insufficient_payload"],"consensus_categories":[],"category_scores_codex":[0.000010061039,0.00003287211,0.00008936319,0.00015311575,0.000003442536,0.0000023193588,0.00006320723,0.000028302684,0.0009559427],"category_scores_gemma":[0.000007110709,0.000027638287,0.00004443467,0.0003274615,0.000013198225,0.000021711574,0.000011000273,0.000026151893,0.00003772584],"study_design_candidate":"simulation_or_modeling","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00000450623,0.00021688952,0.09550277,0.00025439428,0.012760273,0.000029255882,0.0028104184,0.053981528,0.17699364,0.034975998,0.1108696,0.51160073],"study_design_scores_gemma":[0.00020731174,0.000042434316,0.011090437,0.000011247156,0.0005375048,0.0000017674707,0.0005588479,0.7268471,0.25265318,0.00034388943,0.0074259415,0.00028030435],"about_ca_topic_score_codex":0.000006722764,"about_ca_topic_score_gemma":0.00001692235,"teacher_disagreement_score":0.6728656,"about_ca_system_score_codex":0.000005331717,"about_ca_system_score_gemma":1.789439e-7,"threshold_uncertainty_score":0.9999573},"labels":[],"label_agreement":null},{"id":"W4249907117","doi":"10.1149/ma2016-02/32/2082","title":"Combined Surface Activated Bonding Technique for Hydrophilic SiO<sub>2</sub>-SiO<sub>2</sub> and Cu-Cu Bonding","year":2016,"lang":"en","type":"article","venue":"ECS Meeting Abstracts","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Optech (Canada)","funders":"","keywords":"Anodic bonding; Materials science; Microelectronics; Direct bonding; Thermocompression bonding; Interconnection; Bonding in solids; Bonding strength; Copper; Chemical bond; Composite material; Chemical engineering; Nanotechnology; Metallurgy; Silicon; Chemistry; Layer (electronics)","score_opus":0.011383885409998575,"score_gpt":0.21564159664012392,"score_spread":0.20425771123012534,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4249907117","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9912892,0.0002471942,0.00058812066,0.00047657453,0.00040130204,0.00089246157,0.00003534664,0.0027769636,0.0032928255],"genre_scores_gemma":[0.99715793,0.00021660581,0.0020993205,0.000024130763,0.00012088098,0.00012432082,0.000015948077,0.00019577362,0.000045101184],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99719113,0.000038240614,0.0007162055,0.0006710235,0.00031726112,0.001066134],"domain_scores_gemma":[0.9979951,0.0008703356,0.00027107037,0.0005513148,0.00009601192,0.00021616761],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.0007938513,0.00060408143,0.0006006922,0.00032646052,0.00036979842,0.00012065268,0.00037504983,0.00059220375,0.0000029577739],"category_scores_gemma":[0.00093121827,0.0005320991,0.0001431285,0.00042874206,0.00016641156,0.0004519313,0.00019352736,0.0005418043,0.000044069737],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00003873919,0.000038563103,0.0005775045,0.000209493,0.00007096661,0.00002722092,0.00008243185,0.0023082118,0.99238545,0.00013362819,0.0012009793,0.0029267864],"study_design_scores_gemma":[0.0009633758,0.000120443525,0.0021875584,0.0009649445,0.000045937126,0.00003079644,0.000111921254,0.00083990576,0.99123883,0.0020120142,0.00076155935,0.00072270853],"about_ca_topic_score_codex":0.000015805826,"about_ca_topic_score_gemma":0.000010077179,"teacher_disagreement_score":0.005868707,"about_ca_system_score_codex":0.0002558421,"about_ca_system_score_gemma":0.000038731876,"threshold_uncertainty_score":0.99971306},"labels":[],"label_agreement":null},{"id":"W4250529179","doi":"10.1149/ma2006-01/10/410","title":"Current Challenges with Cu Interconnects","year":2006,"lang":"en","type":"article","venue":"ECS Meeting Abstracts","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Advanced Micro Devices (Canada)","funders":"","keywords":"Current (fluid); Materials science; Engineering physics; Electrical engineering; Engineering","score_opus":0.015459256779401786,"score_gpt":0.2127728033207405,"score_spread":0.1973135465413387,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4250529179","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.76877534,0.007254753,0.000026628326,0.00014016253,0.00026476214,0.00006052849,0.0000012786999,0.0013377722,0.22213879],"genre_scores_gemma":[0.9985537,0.0003830655,0.0008386915,0.000003115715,0.00014687357,0.000011166124,0.0000031852053,0.000030406505,0.000029778195],"study_design_codex":"simulation_or_modeling","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9992859,0.0000053382546,0.0001665509,0.00015483149,0.000114389586,0.00027303622],"domain_scores_gemma":[0.9996673,0.000060225168,0.00003709649,0.00018295395,0.000021807711,0.000030628617],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000102632745,0.00015262022,0.00012988196,0.00007280476,0.00003969286,0.000027279992,0.00013422497,0.000070529924,0.0000055838104],"category_scores_gemma":[0.00003843898,0.00012852089,0.000024971077,0.00007062911,0.000035397123,0.000081070924,0.000024027295,0.00022709904,0.00008208293],"study_design_candidate":"simulation_or_modeling","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000033090528,0.00036109277,0.00669435,0.0013601324,0.00016895437,0.0002853058,0.0012691022,0.7825778,0.025417155,0.0030347647,0.017080493,0.16171777],"study_design_scores_gemma":[0.001857826,0.00032659076,0.18891484,0.0029468131,0.000095045594,0.00014281526,0.0020297004,0.007897412,0.59485126,0.009916293,0.1887156,0.0023057915],"about_ca_topic_score_codex":0.000035457568,"about_ca_topic_score_gemma":0.00007678358,"teacher_disagreement_score":0.7746804,"about_ca_system_score_codex":0.00003154088,"about_ca_system_score_gemma":0.0000073733745,"threshold_uncertainty_score":0.524093},"labels":[],"label_agreement":null},{"id":"W4256070630","doi":"10.1007/978-1-4020-8021-0_2","title":"Microfabrication Processes","year":2004,"lang":"en","type":"book-chapter","venue":"","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":2,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Simon Fraser University","funders":"","keywords":"Microfabrication; Surface micromachining; Fabrication; Foundation (evidence); Computer science; Nanotechnology; Systems engineering; Materials science; Manufacturing engineering; Engineering; History","score_opus":0.01002810277780208,"score_gpt":0.17683995077455297,"score_spread":0.1668118479967509,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4256070630","genre_codex":"other","genre_gemma":"other","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"other","genre_consensus":"other","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.000008547834,0.002574206,0.0042352458,0.000052671592,0.00007449226,0.000079423924,0.000004768702,0.0019991149,0.9909715],"genre_scores_gemma":[0.050159227,0.003843296,0.0025142948,0.000034099565,0.000077192264,0.000013302163,0.000038120208,0.00008688784,0.9432336],"study_design_codex":"theoretical_or_conceptual","study_design_gemma":"not_applicable","domain_scores_codex":[0.99968255,1.3205768e-7,0.0000924891,0.00009452528,0.000052323376,0.00007796905],"domain_scores_gemma":[0.9997827,0.000006472685,0.00001557674,0.00015582926,0.000027641769,0.000011807151],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000007741638,0.0001335477,0.00010647708,0.000069962414,0.000012030281,0.000010495065,0.00010956945,0.00023262341,0.00044110345],"category_scores_gemma":[0.000005462211,0.00012117198,0.000023797642,0.000016861992,0.000025724794,0.000031298732,0.000016290645,0.00013001353,0.0005348828],"study_design_candidate":"theoretical_or_conceptual","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[7.809695e-7,0.000004031601,0.0000034929376,0.0007889278,0.000084295265,0.00000817564,0.000035276014,0.00032786306,0.00021594868,0.9299861,0.025845107,0.042699963],"study_design_scores_gemma":[0.00008424334,0.000015289303,0.0000065774298,0.00018216082,0.000026556181,0.000008153221,0.00000877019,0.000020268708,0.01097651,0.24210592,0.7461528,0.00041270256],"about_ca_topic_score_codex":0.000001625354,"about_ca_topic_score_gemma":0.0000032362466,"teacher_disagreement_score":0.72030777,"about_ca_system_score_codex":0.00005696508,"about_ca_system_score_gemma":0.00002680542,"threshold_uncertainty_score":0.68750155},"labels":[],"label_agreement":null},{"id":"W4281648811","doi":"10.1109/jmems.2022.3172920","title":"Characterization of a Wafer-Level Packaged Au−Ru/AlCu Contact for Micro-Switches","year":2022,"lang":"en","type":"article","venue":"Journal of Microelectromechanical Systems","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":6,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Dalsa Corporation; University of Waterloo; Université de Sherbrooke","funders":"Natural Sciences and Engineering Research Council of Canada; Mitacs","keywords":"Notation; Wafer; Materials science; Mathematics; Algebra over a field; Nanotechnology; Pure mathematics; Arithmetic","score_opus":0.01915953801138301,"score_gpt":0.20667632051562426,"score_spread":0.18751678250424125,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4281648811","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9088327,0.000558714,0.089098565,0.00012412993,0.0008145578,0.00035270405,0.00011535634,0.00008312941,0.000020129604],"genre_scores_gemma":[0.9991051,0.00007783428,0.00045716696,0.000015988015,0.00015500688,0.00004240176,0.000016334525,0.0000419764,0.00008820347],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9983986,0.000057073765,0.00082488643,0.00012313329,0.0002553147,0.00034099238],"domain_scores_gemma":[0.9990809,0.000100732264,0.00044616562,0.00017334273,0.00013676964,0.000062068444],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00066945347,0.00017446373,0.00057738175,0.00022420999,0.00010213309,0.000024716208,0.00039519483,0.000119616634,0.000022297645],"category_scores_gemma":[0.00007025811,0.00015751198,0.00023126329,0.0002559806,0.000014451218,0.00011017062,0.00005554607,0.00042311166,0.0000017532238],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00009505807,0.00005981175,0.000060953957,0.00015998233,0.00019185989,0.0000058956502,0.00011105585,0.00007470163,0.99676,0.0008134487,0.00042267216,0.0012445519],"study_design_scores_gemma":[0.0013966217,0.0016706988,0.0004043205,0.00011476468,0.000090770816,0.000550046,0.00052389264,0.0016574652,0.9852815,0.00039704324,0.0076492806,0.00026354523],"about_ca_topic_score_codex":0.000012633227,"about_ca_topic_score_gemma":0.0000024525668,"teacher_disagreement_score":0.090272374,"about_ca_system_score_codex":0.00041491617,"about_ca_system_score_gemma":0.00009764246,"threshold_uncertainty_score":0.6423152},"labels":[],"label_agreement":null},{"id":"W4283710572","doi":"10.1109/isqed54688.2022.9806286","title":"Integrated Power Delivery Methodology for 3D ICs","year":2022,"lang":"en","type":"article","venue":"2022 23rd International Symposium on Quality Electronic Design (ISQED)","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":12,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McGill University","funders":"Natural Sciences and Engineering Research Council of Canada; Nature","keywords":"Three-dimensional integrated circuit; Parasitic extraction; Power network design; Integrated circuit; Chip; Electronic engineering; Computer science; Power domains; Power management; Voltage; Power (physics); Electrical engineering; Engineering","score_opus":0.056106393591774786,"score_gpt":0.30406920194877374,"score_spread":0.24796280835699896,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4283710572","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.0573119,0.0012988383,0.9204165,0.0029896218,0.0038003474,0.0012744196,0.00039995808,0.0019995025,0.01050891],"genre_scores_gemma":[0.9822372,0.00037641427,0.012621966,0.00088307756,0.00012540296,0.0010832063,0.00032641692,0.00010071963,0.002245583],"study_design_codex":"theoretical_or_conceptual","study_design_gemma":"not_applicable","domain_scores_codex":[0.997327,0.00046464414,0.00054998556,0.00047985677,0.00051468646,0.0006637933],"domain_scores_gemma":[0.99837106,0.0009630223,0.00013004846,0.0003430417,0.00013779178,0.00005505925],"candidate_categories":["metaepi_narrow","insufficient_payload"],"consensus_categories":[],"category_scores_codex":[0.0018727914,0.00031617258,0.0003696339,0.0002480351,0.00022310833,0.000047066736,0.00083224924,0.0001540414,0.0011997763],"category_scores_gemma":[0.00018840488,0.000337547,0.00020823683,0.00034289111,0.000068299596,0.00013255855,0.00016648447,0.00086318905,0.00004392686],"study_design_candidate":"not_applicable","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0019715668,0.00069205655,0.0001847115,0.000080048405,0.0021583256,0.000028640514,0.00084467937,0.11885569,0.21506701,0.52640116,0.08765491,0.046061184],"study_design_scores_gemma":[0.0027479965,0.003101079,0.00016229745,0.000024900275,0.00011107562,0.000090250105,0.0013341313,0.15862569,0.060358513,0.043815676,0.7280825,0.0015459084],"about_ca_topic_score_codex":0.000045209672,"about_ca_topic_score_gemma":0.000012271115,"teacher_disagreement_score":0.9249253,"about_ca_system_score_codex":0.0013920899,"about_ca_system_score_gemma":0.00015412894,"threshold_uncertainty_score":0.9999077},"labels":[],"label_agreement":null},{"id":"W4285398530","doi":"10.1149/ma2022-01251213mtgabs","title":"Defect-Free Metallization of through-Glass Vias (TGV) with Engineered Geometry","year":2022,"lang":"en","type":"article","venue":"ECS Meeting Abstracts","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Research & Development Corporation","funders":"","keywords":"Electroplating; Materials science; Void (composites); Bridging (networking); Copper plating; Plating (geology); Conformal map; Resist; Microelectromechanical systems; Composite material; Optoelectronics; Geometry; Computer science","score_opus":0.010460263140001931,"score_gpt":0.1955692603902893,"score_spread":0.18510899725028737,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4285398530","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9443948,0.0008209202,0.0009667254,0.00008709268,0.00024911595,0.00013901886,0.000021082675,0.0009874628,0.05233376],"genre_scores_gemma":[0.99285996,0.000038724407,0.006900661,0.000021411917,0.000022931694,0.000028872657,0.00001963266,0.00004775931,0.00006002191],"study_design_codex":"simulation_or_modeling","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9989801,0.000015170916,0.0002704571,0.00016968702,0.00031038743,0.00025420298],"domain_scores_gemma":[0.99932516,0.000117039286,0.00009490133,0.00039916104,0.00003539666,0.000028352022],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00024217257,0.00016264773,0.00021219265,0.00014065923,0.00009404233,0.00001541466,0.00033187485,0.00006045946,0.00004748471],"category_scores_gemma":[0.00023118823,0.00015859921,0.000060982926,0.0005052257,0.000036443842,0.000115159484,0.00012495436,0.0002978069,0.000008423254],"study_design_candidate":"simulation_or_modeling","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000008106038,0.00003333902,0.00048496414,0.000080229634,0.000106576124,0.000015750928,0.00022232356,0.97734576,0.018543387,0.000169048,0.0027798377,0.00021064538],"study_design_scores_gemma":[0.0025404212,0.00061342964,0.016639221,0.0002539246,0.00028093363,0.0001298099,0.0031886795,0.02436155,0.8845016,0.0033156544,0.06272823,0.0014465598],"about_ca_topic_score_codex":0.000039350918,"about_ca_topic_score_gemma":0.00000627224,"teacher_disagreement_score":0.9529842,"about_ca_system_score_codex":0.00006602117,"about_ca_system_score_gemma":0.000017562828,"threshold_uncertainty_score":0.64674884},"labels":[],"label_agreement":null},{"id":"W4288263872","doi":"","title":"CMP developments in MEMS foundry: Application to direct wafer bonding process","year":2019,"lang":"en","type":"preprint","venue":"HAL (Le Centre pour la Communication Scientifique Directe)","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Institut interdisciplinaire d'innovation technologique; Université de Sherbrooke","funders":"","keywords":"Foundry; Wafer; Microelectromechanical systems; Wafer bonding; Die preparation; Process (computing); Chemical-mechanical planarization; Computer science; Manufacturing engineering; Materials science; Engineering; Mechanical engineering; Nanotechnology; Wafer dicing; Polishing; Operating system","score_opus":0.01108451531020899,"score_gpt":0.2262160024822942,"score_spread":0.21513148717208522,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4288263872","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.5220932,0.0011319465,0.26888487,0.0029526372,0.0006459595,0.0020939577,0.00004411437,0.002410575,0.19974275],"genre_scores_gemma":[0.9819483,0.00023287153,0.013232117,0.000033793658,0.000012226202,0.00045626104,0.00022434515,0.000077457415,0.0037825955],"study_design_codex":"design_other","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9977045,0.00033173728,0.0005059206,0.00068955176,0.0003373776,0.0004308867],"domain_scores_gemma":[0.9973801,0.00032769574,0.00015614524,0.001514512,0.0005188937,0.000102684135],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.0018996762,0.00037009513,0.0004256399,0.000439281,0.00010887536,0.0002049169,0.0012486248,0.0003999781,0.000021559936],"category_scores_gemma":[0.000497721,0.00041628603,0.00008512413,0.0006670966,0.000061988714,0.00013950317,0.0008572274,0.00065185846,0.00017311344],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00005400456,0.0012712836,0.10519293,0.0044936957,0.0006481074,0.00002220087,0.060229223,0.05013578,0.026990352,0.15335527,0.006806516,0.59080064],"study_design_scores_gemma":[0.0020522082,0.0000015892217,0.0512941,0.011500326,0.00011606115,0.000016551663,0.0015250392,0.11634355,0.6328372,0.021689212,0.15822321,0.0044009783],"about_ca_topic_score_codex":0.00027238508,"about_ca_topic_score_gemma":0.0008241606,"teacher_disagreement_score":0.6058468,"about_ca_system_score_codex":0.00037255132,"about_ca_system_score_gemma":0.00014211684,"threshold_uncertainty_score":0.9998289},"labels":[],"label_agreement":null},{"id":"W4289782695","doi":"","title":"Challenges and Research for High Density. Highly Integrated Microelectronic Packaging.","year":2018,"lang":"en","type":"preprint","venue":"HAL (Le Centre pour la Communication Scientifique Directe)","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Institut interdisciplinaire d'innovation technologique; Université de Sherbrooke","funders":"","keywords":"Microelectronics; Integrated circuit packaging; Electronic packaging; Computer science; Materials science; Integrated circuit; Optoelectronics; Engineering; Electrical engineering","score_opus":0.03326266128066457,"score_gpt":0.2603942583360754,"score_spread":0.2271315970554108,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4289782695","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.7661919,0.049027286,0.12179895,0.022832248,0.0006390131,0.0017498207,0.00011894477,0.0031707126,0.034471136],"genre_scores_gemma":[0.95760924,0.015099416,0.024959136,0.000011379989,0.000033884036,0.00016583003,0.00020991339,0.00007430127,0.0018369188],"study_design_codex":"design_other","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9971488,0.0010903392,0.00031174524,0.0006494307,0.00024842029,0.00055125006],"domain_scores_gemma":[0.9951495,0.0011772888,0.00009783616,0.0015185502,0.0019615213,0.00009528517],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.0042591016,0.00030847976,0.00036234065,0.00034720378,0.00025553122,0.0002298994,0.00091909204,0.0004769458,0.000014730258],"category_scores_gemma":[0.0010835502,0.00031766033,0.00008389491,0.00023395172,0.00045146464,0.000077706085,0.0010093902,0.0010163246,0.000022347762],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00002914617,0.00024938487,0.00020526319,0.0013541199,0.00039226402,0.0000062102567,0.00892633,0.000034733308,0.013991443,0.27911025,0.0126412865,0.6830596],"study_design_scores_gemma":[0.0010643338,0.0000046162563,0.0035852175,0.003705414,0.0000912806,0.00002370404,0.0007533577,0.022237223,0.7352607,0.1512896,0.080776565,0.0012079742],"about_ca_topic_score_codex":0.00039958186,"about_ca_topic_score_gemma":0.002252943,"teacher_disagreement_score":0.72126925,"about_ca_system_score_codex":0.0001916798,"about_ca_system_score_gemma":0.00013401976,"threshold_uncertainty_score":0.9999275},"labels":[],"label_agreement":null},{"id":"W4289782747","doi":"","title":"3D Digital SiPM and Smart Silicon Interposer for nEXO","year":2016,"lang":"en","type":"preprint","venue":"HAL (Le Centre pour la Communication Scientifique Directe)","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Institut interdisciplinaire d'innovation technologique; Université de Sherbrooke","funders":"","keywords":"Silicon photomultiplier; Silicon; Optoelectronics; Interposer; Computer science; Materials science; Detector; Telecommunications; Nanotechnology; Etching (microfabrication); Layer (electronics)","score_opus":0.010087322181001055,"score_gpt":0.20243331318633923,"score_spread":0.19234599100533817,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4289782747","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.2955013,0.0032862509,0.5838558,0.0060469126,0.0006525685,0.0010422161,0.00043437778,0.0024834059,0.106697164],"genre_scores_gemma":[0.9854711,0.00051485846,0.009581783,0.000021619231,0.000020980582,0.0001248288,0.00016667566,0.00005968404,0.004038428],"study_design_codex":"design_other","study_design_gemma":"not_applicable","domain_scores_codex":[0.9986786,0.0001779311,0.0003056279,0.00042539978,0.00012790377,0.0002845206],"domain_scores_gemma":[0.99747986,0.0007637326,0.00010960129,0.0011332626,0.00042834054,0.00008518308],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.00076512725,0.0002780744,0.00028793415,0.00013433586,0.000106052226,0.00033800767,0.00064288126,0.00031925004,0.000029313265],"category_scores_gemma":[0.00071007776,0.00025567648,0.000117331554,0.0000858128,0.00019836474,0.00016614175,0.00069845864,0.00032985318,0.000023783661],"study_design_candidate":"design_other","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000024240157,0.0002444358,0.005197535,0.0010356171,0.0003648904,0.0000050863055,0.004941931,0.00008191419,0.008151234,0.08560829,0.008403175,0.8859416],"study_design_scores_gemma":[0.0033574556,0.000003968816,0.008114844,0.010637742,0.00022131167,0.00005104101,0.000608638,0.13614075,0.31276712,0.14187306,0.38261262,0.0036114582],"about_ca_topic_score_codex":0.000032742588,"about_ca_topic_score_gemma":0.00011515323,"teacher_disagreement_score":0.8823302,"about_ca_system_score_codex":0.000070022725,"about_ca_system_score_gemma":0.000041026655,"threshold_uncertainty_score":0.99998957},"labels":[],"label_agreement":null},{"id":"W4290755476","doi":"10.3390/s22155904","title":"Towards Real-Time Monitoring of Thermal Peaks in Systems-on-Chip (SoC)","year":2022,"lang":"en","type":"article","venue":"Sensors","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":13,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Université du Québec en Outaouais; Polytechnique Montréal","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Chip; Field-programmable gate array; Thermal; Integrated circuit; System on a chip; Gate array; Computer science; Electronic circuit; Electronic engineering; Computer hardware; Materials science; Embedded system; Electrical engineering; Engineering; Optoelectronics; Physics; Telecommunications","score_opus":0.013689441356872464,"score_gpt":0.2168812680898269,"score_spread":0.20319182673295444,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4290755476","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.97522146,0.00015195766,0.0000023659115,0.000026238797,0.00036345486,0.00009209141,0.000010319627,0.0004178535,0.02371429],"genre_scores_gemma":[0.9993612,0.00004014105,0.00011167156,0.000001003384,0.00004494245,0.000019041185,0.0000014025038,0.000023832241,0.00039677662],"study_design_codex":"simulation_or_modeling","study_design_gemma":"observational","domain_scores_codex":[0.99936825,0.000028315284,0.0001631528,0.00009944008,0.0001594144,0.00018142142],"domain_scores_gemma":[0.9997096,0.00003514708,0.000024250658,0.0002064846,0.00000795803,0.000016556029],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000116229465,0.00009414919,0.00016426737,0.00013002602,0.000032015883,0.000005640449,0.00015229727,0.000048691418,0.00004232169],"category_scores_gemma":[0.000017585602,0.000094667805,0.000035709596,0.00017755959,0.000019968918,0.000019836049,0.00005816038,0.00020901884,0.000025214797],"study_design_candidate":"simulation_or_modeling","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000021912407,0.00003613768,0.010068327,0.000120132514,0.000050838233,0.000074912634,0.0011884284,0.94484943,0.037570536,0.000982477,0.00044556273,0.004591324],"study_design_scores_gemma":[0.0036741372,0.0012371034,0.33728722,0.0007225938,0.00009184839,0.00011088803,0.0477462,0.27650443,0.31809625,0.0009855358,0.01082639,0.002717412],"about_ca_topic_score_codex":0.00011947236,"about_ca_topic_score_gemma":4.9952894e-7,"teacher_disagreement_score":0.668345,"about_ca_system_score_codex":0.00009072717,"about_ca_system_score_gemma":0.000008169923,"threshold_uncertainty_score":0.3860441},"labels":[],"label_agreement":null},{"id":"W4299411673","doi":"10.1561/9781601984593","title":"System-in-Package: Electrical and Layout Perspectives","year":2010,"lang":"en","type":"book","venue":"now publishers, Inc. eBooks","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":2,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Alberta","funders":"","keywords":"Scalability; System in package; Computer science; Design flow; Power integrity; Computer architecture; System integration; Signal integrity; Die (integrated circuit); Physical design; Routing (electronic design automation); Electronics; Three-dimensional integrated circuit; Embedded system; Electronic engineering; Electrical engineering; Integrated circuit; Engineering; Chip; Circuit design; Telecommunications; Operating system; Printed circuit board","score_opus":0.0054729208512830875,"score_gpt":0.18590118110543932,"score_spread":0.18042826025415623,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4299411673","genre_codex":"other","genre_gemma":"other","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"other","genre_consensus":"other","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.0017828423,0.0032846746,0.00009874296,0.000048999846,0.00071259757,0.00047654012,0.0000365787,0.0022904498,0.9912686],"genre_scores_gemma":[0.19540732,0.000108165616,0.0010133069,0.00004495621,0.0008395604,0.0001814422,0.000095721014,0.00035032973,0.8019592],"study_design_codex":"not_applicable","study_design_gemma":"not_applicable","domain_scores_codex":[0.99804914,0.000022861117,0.00040563315,0.0005755486,0.00033373333,0.0006130808],"domain_scores_gemma":[0.9988995,0.000104624225,0.00009088125,0.0006626893,0.00010360004,0.00013869339],"candidate_categories":["metaepi_narrow","research_integrity"],"consensus_categories":["research_integrity"],"category_scores_codex":[0.00023856908,0.0005605359,0.0006944353,0.0007111133,0.00007855169,0.0005619809,0.00059304986,0.0016794951,0.00006229149],"category_scores_gemma":[0.00009704994,0.0005485722,0.00010676373,0.00009165941,0.0002723805,0.00035666398,0.00017935355,0.0026450513,0.00010792958],"study_design_candidate":"not_applicable","study_design_consensus":"not_applicable","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000028211769,0.000038935163,0.0003319344,0.0011610991,0.0003867756,0.00035100564,0.001432567,0.0000124809585,0.00030075837,0.10049272,0.8574922,0.037971284],"study_design_scores_gemma":[0.0010900488,0.00013782234,0.00033438936,0.0004256963,0.00012795674,0.00016277046,0.0019039793,0.0013692009,0.00028595337,0.0059848493,0.9864942,0.0016831493],"about_ca_topic_score_codex":0.000032308257,"about_ca_topic_score_gemma":0.00014578922,"teacher_disagreement_score":0.19362447,"about_ca_system_score_codex":0.00062912476,"about_ca_system_score_gemma":0.00022969967,"threshold_uncertainty_score":0.99969655},"labels":[],"label_agreement":null},{"id":"W4308680566","doi":"10.1039/d2ra04234g","title":"Direct glass-to-glass bonding obtained <i>via</i> simplified ammonia-based low-temperature procedure resists high shear stress and powerful CW fiber laser irradiation","year":2022,"lang":"en","type":"article","venue":"RSC Advances","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":7,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Waterloo Institute for Nanotechnology, University of Waterloo; Natural Sciences and Engineering Research Council of Canada; University of Waterloo","keywords":"Materials science; Anodic bonding; Composite material; Ammonium hydroxide; Surface roughness; Hydroxide; Soda-lime glass; Chemical engineering; Layer (electronics)","score_opus":0.0038101375061139176,"score_gpt":0.204573495812462,"score_spread":0.2007633583063481,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4308680566","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99329007,0.002507296,0.00012621724,0.0008117241,0.00039249338,0.00044035944,0.00019052235,0.0012296751,0.0010116256],"genre_scores_gemma":[0.99717087,0.00007284007,0.0014519437,0.00016817934,0.00008929166,0.00014484445,0.00008726891,0.000061204744,0.00075355713],"study_design_codex":"simulation_or_modeling","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9986015,0.00003602593,0.00024002483,0.0004111769,0.0002981285,0.000413132],"domain_scores_gemma":[0.99939024,0.00012409824,0.000061883606,0.0002921372,0.00003842905,0.00009322837],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.00011116697,0.00028852362,0.00030081745,0.00018479428,0.0002742971,0.000072363924,0.00022625578,0.00012330415,0.000057290603],"category_scores_gemma":[0.00007810364,0.0002837203,0.000050976552,0.0005434096,0.00005185806,0.00028098712,0.00009138607,0.00035112712,0.000016825943],"study_design_candidate":"simulation_or_modeling","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00057979306,0.00029525123,0.009214287,0.0021071935,0.00024273897,0.00019845822,0.00093884964,0.894605,0.047799,0.0012726901,0.022292372,0.020454409],"study_design_scores_gemma":[0.0048235455,0.0010555534,0.037788436,0.00069530105,0.00017586692,0.00003920362,0.0021592325,0.014295519,0.5504181,0.002162349,0.38299006,0.0033968482],"about_ca_topic_score_codex":0.000009698833,"about_ca_topic_score_gemma":0.000037876456,"teacher_disagreement_score":0.88030946,"about_ca_system_score_codex":0.00015978853,"about_ca_system_score_gemma":0.000034024884,"threshold_uncertainty_score":0.9999615},"labels":[],"label_agreement":null},{"id":"W4312128271","doi":"","title":"Ba1-xSrxTiO3 (x=0.4) nanoparticles dispersion for 3D integration of decoupling capacitors on glass interposer","year":2016,"lang":"en","type":"preprint","venue":"HAL (Le Centre pour la Communication Scientifique Directe)","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Institut interdisciplinaire d'innovation technologique; Université de Sherbrooke","funders":"","keywords":"Interposer; Capacitor; Decoupling (probability); Materials science; Nanoparticle; Dispersion (optics); Decoupling capacitor; Optoelectronics; Electronic engineering; Nanotechnology; Electrical engineering; Etching (microfabrication); Optics; Engineering; Control engineering","score_opus":0.014003230506212829,"score_gpt":0.2201210934172931,"score_spread":0.20611786291108028,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4312128271","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.56285185,0.00038914045,0.42822012,0.0010865644,0.0004908844,0.00041234048,0.00007465009,0.00050953985,0.0059649474],"genre_scores_gemma":[0.9713442,0.00033849583,0.02748383,0.000009865205,0.00002269542,0.00010416002,0.00010997237,0.000047617537,0.00053919206],"study_design_codex":"design_other","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99843496,0.00027585364,0.0004719574,0.00037147145,0.00019868196,0.00024706312],"domain_scores_gemma":[0.99718225,0.0008437602,0.00022673124,0.0010386581,0.0006478158,0.000060803417],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0012939618,0.00026607834,0.00031448112,0.00020044688,0.00011122652,0.00008497075,0.00062359317,0.0003071455,0.00002829678],"category_scores_gemma":[0.0007057493,0.00023044685,0.00016728757,0.0001367832,0.00016608856,0.000106474574,0.00031969463,0.00031784922,0.000014319922],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00007963122,0.00050953537,0.0019467905,0.0009609564,0.00031632918,0.0000018189106,0.008780341,0.0023519767,0.37035877,0.15265465,0.0026694336,0.45936978],"study_design_scores_gemma":[0.00033626048,0.0000013653938,0.00044894882,0.0031006997,0.00003544791,0.0000010626718,0.00019659393,0.103084095,0.8849652,0.0054475367,0.0020796547,0.0003031543],"about_ca_topic_score_codex":0.00007333363,"about_ca_topic_score_gemma":0.00026932108,"teacher_disagreement_score":0.5146064,"about_ca_system_score_codex":0.00016105226,"about_ca_system_score_gemma":0.00004284904,"threshold_uncertainty_score":0.939735},"labels":[],"label_agreement":null},{"id":"W4312576493","doi":"10.1109/tvlsi.2022.3214793","title":"A Robust Integrated Power Delivery Methodology for 3-D ICs","year":2022,"lang":"en","type":"article","venue":"IEEE Transactions on Very Large Scale Integration (VLSI) Systems","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":15,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McGill University","funders":"Natural Sciences and Engineering Research Council of Canada; Fonds de recherche du Québec","keywords":"Notation; Integrated circuit; Computer science; Power (physics); Dimension (graph theory); Power domains; Electronic engineering; Topology (electrical circuits); Voltage; Mathematics; Electrical engineering; Engineering; Physics; Arithmetic","score_opus":0.047473075573310444,"score_gpt":0.24547618399402818,"score_spread":0.19800310842071772,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4312576493","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.034159176,0.00036148442,0.9557947,0.00009450421,0.0055661164,0.0008374035,0.0009035177,0.0014722148,0.0008108856],"genre_scores_gemma":[0.9917268,0.000062715124,0.0050054984,0.000078225945,0.000053589796,0.0014353427,0.00008314409,0.00008209966,0.0014725851],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9979963,0.00024695252,0.0005829984,0.00040347714,0.00030004294,0.00047027355],"domain_scores_gemma":[0.9989086,0.0003494501,0.00008963048,0.0004040519,0.00017148271,0.0000767881],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.0006874317,0.00034465664,0.00046002035,0.0005028984,0.0005187779,0.00007686238,0.00032071598,0.0002774206,0.00028468782],"category_scores_gemma":[0.000020545922,0.00033244782,0.00026956163,0.0006108717,0.00006138375,0.0002495285,0.0000042920274,0.00079993263,0.000046531295],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00027401408,0.00040066303,0.000018587452,0.00014415961,0.0003982215,0.000014377599,0.0016125834,0.95127004,0.016225481,0.002425487,0.0142307365,0.012985637],"study_design_scores_gemma":[0.0020303996,0.00095772406,0.000023392957,0.00014011326,0.00018449248,0.00016833181,0.031410936,0.85016024,0.05473032,0.0003844519,0.058748562,0.0010610165],"about_ca_topic_score_codex":0.00008830728,"about_ca_topic_score_gemma":0.00020503902,"teacher_disagreement_score":0.95756763,"about_ca_system_score_codex":0.000486727,"about_ca_system_score_gemma":0.000064720916,"threshold_uncertainty_score":0.99991274},"labels":[],"label_agreement":null},{"id":"W4313854556","doi":"10.1109/icm56065.2022.10005514","title":"Transient Thermal Analysis of System-in-Package Technology by the Finite Element Method (FEM)","year":2022,"lang":"en","type":"article","venue":"","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":11,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Université de Sherbrooke; Cégep de l'Outaouais","funders":"","keywords":"Multiphysics; Finite element method; Transient (computer programming); Thermal analysis; Thermal; System in package; Thermal conduction; Reliability (semiconductor); Materials science; Electronic packaging; Mechanical engineering; Computer science; Electronic engineering; Engineering; Structural engineering; Chip; Composite material; Physics; Thermodynamics; Telecommunications","score_opus":0.0075596711419741135,"score_gpt":0.2234873826077371,"score_spread":0.21592771146576298,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4313854556","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.5637686,0.0023606718,0.40923733,0.00091422827,0.00018501065,0.00052917,0.00016698624,0.0016418241,0.02119614],"genre_scores_gemma":[0.99817497,0.000014866212,0.001501392,0.000017900162,0.0000019229851,0.00012471051,0.0000102361855,0.000010967974,0.00014303095],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99922615,0.000041114097,0.0002588109,0.00012846237,0.00015202434,0.00019345252],"domain_scores_gemma":[0.99951214,0.00007983656,0.00003088157,0.0003581008,0.000009447805,0.000009607663],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00032007124,0.00009849458,0.0002534004,0.00046340717,0.00005064683,0.0000043383784,0.00034816744,0.000052551062,0.00024171919],"category_scores_gemma":[0.0000057302955,0.000069444875,0.00009480303,0.0017204209,0.000033902397,0.000017715838,0.00008244975,0.00021188182,0.0000024267695],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000012074984,0.000097022596,0.0032972014,0.00010558285,0.0019438487,0.000018466753,0.00084178295,0.8941153,0.040192805,0.027349887,0.0017135518,0.03031243],"study_design_scores_gemma":[0.00071336003,0.00018825466,0.0017626823,0.000015448,0.00083936134,0.000007944269,0.029957019,0.82228816,0.122045875,0.00020553867,0.021559974,0.00041637782],"about_ca_topic_score_codex":0.00005310575,"about_ca_topic_score_gemma":0.00004193788,"teacher_disagreement_score":0.43440634,"about_ca_system_score_codex":0.00008509106,"about_ca_system_score_gemma":0.0000054679667,"threshold_uncertainty_score":0.283188},"labels":[],"label_agreement":null},{"id":"W4321484263","doi":"10.1109/tvlsi.2023.3244489","title":"A Single-TSV and Single-DCDL Approach for Skew Compensation of Multi-Dies Clock Synchronization in 3-D-ICs","year":2023,"lang":"en","type":"article","venue":"IEEE Transactions on Very Large Scale Integration (VLSI) Systems","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Dalhousie University","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Die (integrated circuit); Skew; Clock skew; Synchronization (alternating current); Topology (electrical circuits); Compensation (psychology); Electronic engineering; Engineering; Computer science; Clock signal; Electrical engineering; Jitter; Telecommunications","score_opus":0.031229794861225273,"score_gpt":0.2326991546633175,"score_spread":0.20146935980209224,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4321484263","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.10377226,0.00024916124,0.893475,0.000024143974,0.0006790388,0.00078842125,0.00014917209,0.00071548176,0.0001473388],"genre_scores_gemma":[0.99580675,0.00012068506,0.0034052157,0.000005385183,0.000033512006,0.00028663778,0.000099971185,0.000047166224,0.00019469022],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99865466,0.00005470595,0.0005475231,0.00027691806,0.00019417719,0.00027203423],"domain_scores_gemma":[0.999385,0.0001408841,0.00009409806,0.00020632047,0.00013551193,0.00003817075],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00027154863,0.0002323023,0.00035246817,0.00054436084,0.00012332911,0.000063783446,0.00010181191,0.00026908756,0.0000033425963],"category_scores_gemma":[0.000023078703,0.00022849713,0.0000733168,0.0006880924,0.00006706688,0.00029306053,0.0000020954656,0.00020574902,0.0000074156856],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00010687417,0.0009064792,0.00047624984,0.0018970312,0.00018968935,0.0000029365763,0.0042730356,0.87387323,0.07653989,0.0009874173,0.0004917499,0.040255412],"study_design_scores_gemma":[0.0008502302,0.00016624272,0.00017548571,0.00027021093,0.000031864045,0.0000069286416,0.0035225532,0.9526218,0.041889045,0.000037801918,0.00019831967,0.0002295049],"about_ca_topic_score_codex":0.000044545588,"about_ca_topic_score_gemma":0.00031675014,"teacher_disagreement_score":0.8920345,"about_ca_system_score_codex":0.00020710874,"about_ca_system_score_gemma":0.000018283645,"threshold_uncertainty_score":0.9317842},"labels":[],"label_agreement":null},{"id":"W4360609782","doi":"10.1109/isscc42615.2023.10067798","title":"Session 13 Overview: Ideas for the Future: Technology Directions Subcommittee","year":2023,"lang":"en","type":"article","venue":"","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of British Columbia","funders":"","keywords":"Session (web analytics); Computer science; World Wide Web","score_opus":0.015189626946851562,"score_gpt":0.2518491020650601,"score_spread":0.23665947511820856,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4360609782","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.26790848,0.14112805,0.19800632,0.16887334,0.019763308,0.0041416413,0.000120138015,0.14396183,0.05609689],"genre_scores_gemma":[0.9842712,0.010515962,0.0011402162,0.00008602861,0.00021994674,0.00041362483,0.000008278657,0.000041541767,0.0033031895],"study_design_codex":"not_applicable","study_design_gemma":"not_applicable","domain_scores_codex":[0.99954176,0.0000030087203,0.000098057215,0.00009887509,0.000054452907,0.00020384666],"domain_scores_gemma":[0.999555,0.00010315825,0.000009760252,0.00030097232,0.000018858496,0.000012279457],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000074122225,0.00009104764,0.000092202514,0.00014843464,0.00016129037,0.000014231923,0.00021745617,0.00014890239,0.00004645819],"category_scores_gemma":[0.000033623983,0.00005659675,0.000053781,0.00078775967,0.000040625724,0.000046735808,0.00007004988,0.00014201553,0.00014323281],"study_design_candidate":"not_applicable","study_design_consensus":"not_applicable","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0000025130694,0.000010342235,0.0012783709,0.000056203593,0.00007923823,0.0000024220828,0.000047043584,0.0010848212,0.0009821216,0.08509126,0.55561507,0.35575062],"study_design_scores_gemma":[0.0001594321,0.000020210447,0.0040900894,0.000011645623,0.000017648805,0.0000055031137,0.0015059196,0.01597315,0.005639558,0.028067932,0.94436836,0.00014055269],"about_ca_topic_score_codex":0.0000069745406,"about_ca_topic_score_gemma":0.000081235085,"teacher_disagreement_score":0.7163627,"about_ca_system_score_codex":0.000018972116,"about_ca_system_score_gemma":0.000004805708,"threshold_uncertainty_score":0.23079485},"labels":[],"label_agreement":null},{"id":"W4362691388","doi":"","title":"Characterization of Interconnects","year":2023,"lang":"en","type":"paratext","venue":"OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information)","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":true,"ca_institutions":"","funders":"","keywords":"Characterization (materials science); Computer science; Materials science; Nanotechnology","score_opus":0.012316520815610186,"score_gpt":0.21692657935771392,"score_spread":0.20461005854210373,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4362691388","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.51560736,0.00088013517,0.027523858,0.00014465497,0.006352835,0.00083298626,0.0037601455,0.0010577868,0.44384024],"genre_scores_gemma":[0.9865701,0.0009164567,0.00041842734,0.000009708101,0.000021686941,0.000039604587,0.009404127,0.000021801054,0.0025980524],"study_design_codex":"not_applicable","study_design_gemma":"not_applicable","domain_scores_codex":[0.9983486,0.000010580365,0.00090423384,0.00017042183,0.00035730697,0.00020886505],"domain_scores_gemma":[0.9988348,0.000083598,0.00043149106,0.00037641398,0.00022108098,0.000052637995],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00021100088,0.00023831689,0.0004993907,0.0006186687,0.00005472059,0.000043826418,0.0003395299,0.00036408476,0.0001667188],"category_scores_gemma":[0.00007719131,0.00022337533,0.000107268505,0.0006269459,0.0004648064,0.000503145,0.0001859239,0.0001556547,0.00016590625],"study_design_candidate":"not_applicable","study_design_consensus":"not_applicable","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00027829033,0.00070343533,0.00020773672,0.012331544,0.0012391708,0.0000060008706,0.00009052237,0.0063126213,0.20109066,0.094736554,0.6346488,0.048354637],"study_design_scores_gemma":[0.0010148229,0.0005430723,0.011696982,0.0018766173,0.0002109919,0.000018493543,0.00003691893,0.0004919418,0.3399092,0.00051327737,0.64257544,0.0011122257],"about_ca_topic_score_codex":0.000009402037,"about_ca_topic_score_gemma":0.000006186005,"teacher_disagreement_score":0.47096276,"about_ca_system_score_codex":0.000034458673,"about_ca_system_score_gemma":0.00005079973,"threshold_uncertainty_score":0.91089815},"labels":[],"label_agreement":null},{"id":"W4379115896","doi":"10.23919/date56975.2023.10137172","title":"The Next Era for Chiplet Innovation","year":2023,"lang":"en","type":"article","venue":"","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":26,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Advanced Micro Devices (Canada)","funders":"","keywords":"Computer science; Product (mathematics); Variety (cybernetics); Soar; Stacking; Data science; Artificial intelligence; Mathematics","score_opus":0.0416677909492878,"score_gpt":0.24487239621987728,"score_spread":0.20320460527058948,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4379115896","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.81928873,0.00022215268,0.08670328,0.0076719145,0.0011885681,0.0005427525,0.000008168998,0.012929627,0.071444824],"genre_scores_gemma":[0.9974374,0.000058760234,0.0006533447,0.000030716907,0.000029179244,0.000047516627,0.000007231854,0.000007548045,0.0017282873],"study_design_codex":"theoretical_or_conceptual","study_design_gemma":"not_applicable","domain_scores_codex":[0.99981153,5.3986383e-7,0.00005241129,0.000028264216,0.000023253166,0.00008401777],"domain_scores_gemma":[0.99985826,0.000046924764,0.0000035584335,0.00007744788,0.000011446511,0.000002377672],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00005673096,0.000026759299,0.000022816625,0.00003775601,0.000049622722,0.000019863428,0.00006063389,0.000024577488,0.000006515994],"category_scores_gemma":[0.00004505914,0.000016743088,0.000008065928,0.0003445665,0.000009172162,0.000033719276,0.0000111747595,0.00003351209,0.000070131806],"study_design_candidate":"not_applicable","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0000013712333,0.0000012348188,0.000116345895,0.000016132648,0.000017119504,2.4875322e-7,0.00004000906,0.0009969241,0.0036187791,0.49368322,0.23973215,0.26177648],"study_design_scores_gemma":[0.00024554346,0.000029085515,0.0058093825,0.000005957394,0.0000033715128,8.3426727e-7,0.00077652646,0.15980369,0.026729262,0.08591809,0.72051984,0.00015840185],"about_ca_topic_score_codex":8.335464e-7,"about_ca_topic_score_gemma":0.000003145169,"teacher_disagreement_score":0.4807877,"about_ca_system_score_codex":0.0000051168918,"about_ca_system_score_gemma":0.0000019981878,"threshold_uncertainty_score":0.090142585},"labels":[],"label_agreement":null},{"id":"W4385066962","doi":"10.3390/electronics12143154","title":"Advanced Thermal Control Using Chip Cooling Laminate Chip (CCLC) with Finite Element Method for System-in-Package (SiP) Technology","year":2023,"lang":"en","type":"article","venue":"Electronics","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":18,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Université de Sherbrooke; Université du Québec en Outaouais","funders":"","keywords":"Multiphysics; Finite element method; System in package; Chip; Mechanical engineering; Reliability (semiconductor); Thermal; Electronic packaging; Electronic engineering; Materials science; Temperature control; Computer science; Engineering; Electrical engineering; Structural engineering","score_opus":0.00854233383199903,"score_gpt":0.24506692882363595,"score_spread":0.23652459499163692,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4385066962","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.556087,0.0040420434,0.43549943,0.00012265852,0.0001413311,0.00092428154,0.00002386301,0.002901078,0.0002583128],"genre_scores_gemma":[0.981922,0.00019610906,0.01743101,0.000015800355,0.00003528961,0.00024906965,0.000013777084,0.00008720051,0.000049768332],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99835145,0.000023998395,0.00028681097,0.0002846251,0.00012536813,0.0009277369],"domain_scores_gemma":[0.9993642,0.00016680997,0.00006983894,0.00033078034,0.00003954065,0.000028832832],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0003705743,0.00025788698,0.00038708383,0.00039855414,0.000100536985,0.000022021553,0.0002652801,0.00020247952,0.0000024551978],"category_scores_gemma":[0.000059909667,0.0002331418,0.000055950502,0.00082581927,0.000035781155,0.000083265295,0.000038304548,0.0004108006,0.000010204466],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00020017424,0.000030380595,0.0006513122,0.0005181992,0.00028837778,0.00006235204,0.00016559577,0.77355784,0.13005474,0.023936953,0.000029790497,0.07050428],"study_design_scores_gemma":[0.002562971,0.00035886373,0.00022692617,0.00017812506,0.00006675198,0.000020914487,0.0006380659,0.90830785,0.082610086,0.00090719847,0.0036873738,0.00043489473],"about_ca_topic_score_codex":0.00000275421,"about_ca_topic_score_gemma":0.000049758273,"teacher_disagreement_score":0.42583498,"about_ca_system_score_codex":0.00030916982,"about_ca_system_score_gemma":0.00005860268,"threshold_uncertainty_score":0.95072466},"labels":[],"label_agreement":null},{"id":"W4385226176","doi":"10.3390/mi14071473","title":"Built-In Packaging for Two-Terminal Devices","year":2023,"lang":"en","type":"article","venue":"Micromachines","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":4,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Canada First Research Excellence Fund; Mitacs; University of Waterloo; Innovation, Science and Economic Development Canada; Natural Sciences and Engineering Research Council of Canada; CMC Microsystems; Discovery Eye Foundation","keywords":"Reliability (semiconductor); Interconnection; Terminal (telecommunication); Electronic packaging; Contact resistance; Diode; Wireless; Electronic engineering; Parasitic element; Electrical engineering; Power (physics); Computer science; Engineering; Materials science; Telecommunications; Nanotechnology","score_opus":0.014407833346174112,"score_gpt":0.27005197035996975,"score_spread":0.2556441370137956,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4385226176","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99616647,0.0004979535,0.0007731245,0.0001946443,0.00021043417,0.00011108155,0.000014610491,0.0014136797,0.0006179944],"genre_scores_gemma":[0.9984133,0.000023623523,0.0012253381,0.00002067086,0.00005908821,0.00004315506,0.00001665216,0.0000255051,0.00017261536],"study_design_codex":"bench_or_experimental","study_design_gemma":"observational","domain_scores_codex":[0.99948925,0.0000036669514,0.00011667574,0.00011422347,0.000036418154,0.00023975722],"domain_scores_gemma":[0.9997836,0.00005420569,0.000010482432,0.00012973696,0.000007093733,0.000014909082],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00007979341,0.0001053477,0.00012064495,0.00016712335,0.000035896574,0.000022774775,0.00016156968,0.00004253342,0.000007202965],"category_scores_gemma":[0.000020828084,0.00009567836,0.00003780428,0.00024106042,0.000019203255,0.00006685586,0.000040337454,0.000074924545,0.000061315004],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000024554234,0.000047956033,0.25487697,0.0010454032,0.00011209399,0.00022949128,0.0011521012,0.009424485,0.4490882,0.0017001634,0.029969623,0.252329],"study_design_scores_gemma":[0.0038895202,0.00013830805,0.35185245,0.00047458571,0.00006616801,0.00013734962,0.0014015555,0.31444255,0.21878807,0.020154644,0.08676492,0.0018898965],"about_ca_topic_score_codex":0.000035823825,"about_ca_topic_score_gemma":0.00026232016,"teacher_disagreement_score":0.30501807,"about_ca_system_score_codex":0.00001553598,"about_ca_system_score_gemma":0.0000038085002,"threshold_uncertainty_score":0.39016503},"labels":[],"label_agreement":null},{"id":"W4385525510","doi":"10.1109/ectc51909.2023.00203","title":"ARTSim: A Robust Thermal Simulator for Heterogeneous Integration Platforms","year":2023,"lang":"en","type":"article","venue":"","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":10,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McGill University","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Floorplan; Granularity; Computer science; Thermal; Personalization; Block (permutation group theory); Reduction (mathematics); Simulation; Computational science; Embedded system; Operating system","score_opus":0.0306666972856851,"score_gpt":0.2251940468391888,"score_spread":0.1945273495535037,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4385525510","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.88913655,0.000038816732,0.10447419,0.000047056965,0.00021860728,0.00021151229,0.000008043231,0.004058866,0.0018063285],"genre_scores_gemma":[0.9981603,0.000013181164,0.0011677977,0.00002037321,0.000039981554,0.000053596934,0.000019944946,0.000022098357,0.0005027225],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9996028,5.503099e-7,0.00009478134,0.000079837046,0.000048044636,0.00017400524],"domain_scores_gemma":[0.9998056,0.00003625162,0.000007044633,0.00011987361,0.000012983768,0.000018210496],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000038271206,0.00008291437,0.0000779481,0.000069736096,0.000034281395,0.000018478315,0.00007961614,0.000080547,0.00004048234],"category_scores_gemma":[0.000020645877,0.00006122044,0.000043014017,0.00012423952,0.000012930166,0.000075625416,0.000017460254,0.00005133193,0.00011660912],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0000064406454,0.0000055026544,0.000087824024,0.000029360051,0.000033119533,0.0000038922826,0.000099308025,0.94836855,0.0041096685,0.0030218184,0.004266984,0.039967515],"study_design_scores_gemma":[0.00017099018,0.000037053935,0.00012846927,0.0000070687674,0.0000045214842,0.0000017302546,0.00016146344,0.9452313,0.05069054,0.0017528188,0.001697664,0.00011636576],"about_ca_topic_score_codex":0.0000016786415,"about_ca_topic_score_gemma":0.000010466981,"teacher_disagreement_score":0.10902373,"about_ca_system_score_codex":0.000018607228,"about_ca_system_score_gemma":0.0000032868204,"threshold_uncertainty_score":0.24964969},"labels":[],"label_agreement":null},{"id":"W4385901134","doi":"10.1109/ectc51909.2023.00180","title":"Direct Bonded Heterogeneous Integration (DBHi): Surface Bridge Approach for Die Tiling","year":2023,"lang":"en","type":"article","venue":"","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":7,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"IBM (Canada)","funders":"","keywords":"Fabrication; Chip; Bridge (graph theory); Routing (electronic design automation); Topology (electrical circuits); Computer science; Mechanical engineering; Electrical engineering; Engineering; Embedded system; Telecommunications","score_opus":0.03589299181245053,"score_gpt":0.2450259388528048,"score_spread":0.20913294704035426,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4385901134","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.5999131,0.00048908824,0.36449665,0.00006726284,0.00030660976,0.00049621356,0.000025122212,0.00946689,0.02473902],"genre_scores_gemma":[0.98923755,0.00010749671,0.009325406,0.000009568661,0.000027527352,0.000044087305,0.00006446482,0.000031563075,0.0011523557],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9994357,0.000004040414,0.00012395356,0.00014878379,0.000065126515,0.00022239974],"domain_scores_gemma":[0.9997289,0.000051091953,0.00001062617,0.00017050483,0.000017251106,0.000021583892],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00009157697,0.00011358853,0.00013228192,0.00005864218,0.000046733334,0.000028026145,0.000109292974,0.00009162426,0.000005818216],"category_scores_gemma":[0.000037790724,0.00009780231,0.000059412087,0.00016632101,0.000016512584,0.000060226892,0.00002893274,0.000068269925,0.00003608296],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000037422396,0.000071823866,0.00060706347,0.00046479388,0.00028400842,0.000021321815,0.00072102674,0.7179636,0.097306594,0.003332978,0.041633558,0.13755584],"study_design_scores_gemma":[0.00015260688,0.000025414725,0.00017679959,0.000007699775,0.000009112527,0.0000025148584,0.00013278992,0.7134675,0.28349313,0.00030577436,0.0020587642,0.00016792741],"about_ca_topic_score_codex":0.000012869351,"about_ca_topic_score_gemma":0.000012677212,"teacher_disagreement_score":0.3893244,"about_ca_system_score_codex":0.000029998808,"about_ca_system_score_gemma":0.000004208844,"threshold_uncertainty_score":0.39882624},"labels":[],"label_agreement":null},{"id":"W4386823568","doi":"10.31438/trf.hh2022.61","title":"ROOM TEMPERATURE SEAL-RING AU-TO-AU BONDING HERMETICITY AND RELIABILITY TESTING","year":2022,"lang":"en","type":"article","venue":"","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Dalsa Corporation; Institut interdisciplinaire d'innovation technologique; Université de Sherbrooke","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Microelectromechanical systems; Materials science; Wafer; Fabrication; Reliability (semiconductor); Seal (emblem); Wafer-level packaging; Wafer bonding; Anodic bonding; Electronic packaging; Bonding strength; Composite material; Optoelectronics","score_opus":0.011677445705381376,"score_gpt":0.2069558990040684,"score_spread":0.19527845329868704,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4386823568","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.98671705,0.000058799844,0.00042841167,0.00037276655,0.00018077898,0.00014391956,0.0000062967315,0.0013618786,0.010730122],"genre_scores_gemma":[0.99189126,0.0000016738501,0.007574042,0.000052479463,0.000040303912,0.000026305204,0.0000014763945,0.000021786871,0.00039064244],"study_design_codex":"observational","study_design_gemma":"observational","domain_scores_codex":[0.99915487,0.000016986945,0.0001485177,0.0002261792,0.00013118812,0.00032226054],"domain_scores_gemma":[0.99955964,0.00011226965,0.000012254859,0.00023190142,0.000017423134,0.00006649686],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00022254078,0.0001330401,0.00014868497,0.000087261724,0.00033653865,0.000035322973,0.00014799186,0.00005775957,0.000044318138],"category_scores_gemma":[0.00026860525,0.00012834041,0.000022954735,0.0004127418,0.000023635286,0.000082150786,0.00032959215,0.00038951315,0.000005034926],"study_design_candidate":"observational","study_design_consensus":"observational","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000017519826,0.000074734766,0.43997905,0.0005051353,0.00006153686,0.000058255846,0.0027240138,0.26047006,0.26383618,0.0076271472,0.0050079026,0.019638475],"study_design_scores_gemma":[0.0017071118,0.00076237164,0.5098665,0.00024319153,0.00011442944,0.00030768022,0.018948724,0.1784166,0.24532099,0.008010293,0.033019174,0.0032829647],"about_ca_topic_score_codex":0.0002165296,"about_ca_topic_score_gemma":0.000036707042,"teacher_disagreement_score":0.082053475,"about_ca_system_score_codex":0.0002895415,"about_ca_system_score_gemma":0.000024917646,"threshold_uncertainty_score":0.523357},"labels":[],"label_agreement":null},{"id":"W4386953463","doi":"10.1109/socc58585.2023.10256905","title":"P* Admissible Thermal-Aware Matrix Floorplanner for 3D ICs","year":2023,"lang":"en","type":"article","venue":"","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":3,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McGill University","funders":"","keywords":"Floorplan; Three-dimensional integrated circuit; Computer science; Key (lock); Reduction (mathematics); Integrated circuit; Matrix (chemical analysis); Power (physics); Thermal; Computer engineering; Parallel computing; Algorithm; Computational science; Embedded system; Mathematics; Materials science","score_opus":0.01781467633773608,"score_gpt":0.2570908721660681,"score_spread":0.23927619582833198,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4386953463","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.45664158,0.0015938291,0.28284037,0.0028627878,0.0029055893,0.0014746846,0.00023324921,0.057165146,0.19428277],"genre_scores_gemma":[0.9712528,0.00009919147,0.007990264,0.00004073611,0.00009752899,0.00008452868,0.000035180303,0.00005107268,0.020348694],"study_design_codex":"not_applicable","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99956626,0.0000013527454,0.00008395788,0.000085026775,0.000049708186,0.00021367968],"domain_scores_gemma":[0.99978644,0.00003429332,0.0000058245564,0.00013285232,0.000012878158,0.000027709586],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000045991797,0.00008275785,0.00008523743,0.00007452762,0.000034439287,0.000015976422,0.000109409535,0.00009163295,0.0001995633],"category_scores_gemma":[0.0000142483805,0.000066860586,0.000036481702,0.00017770588,0.000010383563,0.00005113039,0.000029445242,0.00005928831,0.0005925851],"study_design_candidate":"not_applicable","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00001281052,0.000020084668,0.0012333265,0.0004227011,0.00014161607,0.000028731081,0.00015628428,0.03929424,0.006203717,0.010900905,0.8598775,0.08170806],"study_design_scores_gemma":[0.00050078676,0.000057989328,0.0013279084,0.000025788348,0.00001937354,0.0000044201524,0.0005224557,0.66449463,0.032630164,0.0022393062,0.29776818,0.00040900309],"about_ca_topic_score_codex":0.0000032774753,"about_ca_topic_score_gemma":0.000003756013,"teacher_disagreement_score":0.6252004,"about_ca_system_score_codex":0.000011784363,"about_ca_system_score_gemma":0.0000075132793,"threshold_uncertainty_score":0.76166797},"labels":[],"label_agreement":null},{"id":"W4388964837","doi":"","title":"Comparison of sintering methodologies for 3D printed high-density interconnects (2.3 μm L/S) on organic substrates for highperformance computing applications","year":2023,"lang":"en","type":"preprint","venue":"HAL (Le Centre pour la Communication Scientifique Directe)","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Institut interdisciplinaire d'innovation technologique; Université de Sherbrooke","funders":"","keywords":"Sintering; 3d printed; Computer science; Materials science; Process engineering; Composite material; Engineering; Manufacturing engineering","score_opus":0.060945260865491374,"score_gpt":0.302578631052364,"score_spread":0.24163337018687261,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4388964837","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"methods","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.27665502,0.00022671546,0.7195558,0.0005790154,0.00028497097,0.00093949004,0.00008224736,0.0013683902,0.00030834565],"genre_scores_gemma":[0.7168398,0.00013671682,0.28224328,0.0000058623564,0.000017953864,0.00024948578,0.0002814625,0.000060705508,0.00016475718],"study_design_codex":"design_other","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99786896,0.00038589447,0.000688916,0.0005475077,0.00015616996,0.00035257972],"domain_scores_gemma":[0.99292564,0.004308579,0.00040522462,0.0012710704,0.0010368077,0.000052657422],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.0022824432,0.00034355445,0.00065090234,0.0002590885,0.00021481837,0.00011568892,0.0010522977,0.00034686367,0.000007834001],"category_scores_gemma":[0.0015977507,0.00036701822,0.00018421914,0.00028941614,0.00017991611,0.00006585444,0.0007803444,0.0005180285,0.000010012694],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00017579732,0.0010822262,0.006293148,0.0123946015,0.0015436625,0.0000020635905,0.017709743,0.061608173,0.15738282,0.24185611,0.002824626,0.49712703],"study_design_scores_gemma":[0.00035421882,0.0000027527897,0.0024407583,0.0016881155,0.000058471822,0.0000011002786,0.00046932494,0.25379193,0.732253,0.0077563147,0.0007991407,0.00038484132],"about_ca_topic_score_codex":0.00010117281,"about_ca_topic_score_gemma":0.00043416093,"teacher_disagreement_score":0.5748702,"about_ca_system_score_codex":0.00013165647,"about_ca_system_score_gemma":0.000053859752,"threshold_uncertainty_score":0.99987817},"labels":[],"label_agreement":null},{"id":"W4389691536","doi":"10.11159/ijmmme.2023.005","title":"Low Temperature TSV Interconnection with Ultra-thin Ag Nano-twinned Films Sputtered on Si Wafers for 3D-IC Advanced Packages","year":2023,"lang":"en","type":"article","venue":"International Journal of Mining Materials and Metallurgical Engineering","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":false,"route_ca_venue":true,"route_about_ca":false,"ca_institutions":"","funders":"Hsinchu Science Park Bureau, Ministry of Science and Technology, Taiwan","keywords":"Materials science; Wafer; Interconnection; Optoelectronics; Nano-; Composite material; Computer science; Telecommunications","score_opus":0.007577732083172294,"score_gpt":0.21484479562224432,"score_spread":0.207267063539072,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4389691536","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9906623,0.000084878666,0.006783109,0.00020431555,0.0018300479,0.00010785703,0.000027920636,0.0002579539,0.000041643747],"genre_scores_gemma":[0.9923131,0.00026314062,0.0070389337,0.00003123315,0.00021676035,0.000019572628,0.00002059378,0.000042268945,0.00005442119],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99901825,0.0000106471825,0.0003881785,0.00014640404,0.00022499698,0.00021150564],"domain_scores_gemma":[0.9994721,0.00018057016,0.00010186542,0.00007857437,0.000103697144,0.000063239786],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0002470032,0.0002098419,0.00033255407,0.00029565167,0.00003459435,0.00011732647,0.00019552198,0.000119370074,0.000042252443],"category_scores_gemma":[0.00018282903,0.00015811763,0.00007393781,0.00010937462,0.000024695692,0.00022073896,0.000023623674,0.00015481174,0.000003872968],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00022107828,0.00001674106,0.0000033603699,0.00008657206,0.00031780388,0.00008728372,0.00018257674,0.14514153,0.85108435,0.00025526152,0.00020985695,0.0023935768],"study_design_scores_gemma":[0.0023901255,0.00064497656,0.000434792,0.0012013266,0.00006171854,0.00034940636,0.0006344034,0.020191403,0.97114736,0.000058271897,0.0024579852,0.00042824968],"about_ca_topic_score_codex":7.0358124e-7,"about_ca_topic_score_gemma":5.3425737e-7,"teacher_disagreement_score":0.124950126,"about_ca_system_score_codex":0.000044239165,"about_ca_system_score_gemma":0.000010641071,"threshold_uncertainty_score":0.644785},"labels":[],"label_agreement":null},{"id":"W4390856242","doi":"","title":"Thermal Evaluation of Substrate Technologies Used for Power Peak Management in SSPC Modules","year":2023,"lang":"en","type":"preprint","venue":"HAL (Le Centre pour la Communication Scientifique Directe)","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Safran Electronics (Canada)","funders":"","keywords":"Thermal management of electronic devices and systems; Substrate (aquarium); Materials science; Power (physics); Thermal; Computer science; Nuclear engineering; Engineering; Mechanical engineering; Geology; Physics; Thermodynamics","score_opus":0.0328964411442202,"score_gpt":0.25313369988796963,"score_spread":0.22023725874374944,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4390856242","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.93307585,0.0016569506,0.045526084,0.002126128,0.0002850961,0.0015114251,0.00007372291,0.0023052688,0.013439472],"genre_scores_gemma":[0.97820234,0.0006821332,0.019949948,0.0000017185685,0.000002652494,0.0005133416,0.00016747908,0.000051977328,0.00042842497],"study_design_codex":"design_other","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9979694,0.00048682358,0.00046748726,0.00041503814,0.00037679696,0.00028445618],"domain_scores_gemma":[0.99726266,0.00039100653,0.00018976977,0.0014270364,0.0007081924,0.000021362981],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.004281057,0.00025198044,0.00031529798,0.00043665382,0.000060226357,0.00007281279,0.0009786993,0.00035477435,0.000016800675],"category_scores_gemma":[0.00051540125,0.00026828947,0.00012751535,0.00036806174,0.00015694015,0.00007717183,0.0006927225,0.00036852373,0.000010143156],"study_design_candidate":"simulation_or_modeling","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00003622637,0.00087383983,0.006531611,0.003042185,0.0010743093,0.000012496243,0.014524493,0.15736158,0.019192524,0.35295564,0.001972497,0.4424226],"study_design_scores_gemma":[0.0017504359,0.0000011503668,0.04422003,0.002989062,0.00018902757,0.0000010772306,0.0031166351,0.5801162,0.27768373,0.08817176,0.00086226483,0.00089862733],"about_ca_topic_score_codex":0.000100188445,"about_ca_topic_score_gemma":0.00064757874,"teacher_disagreement_score":0.44152397,"about_ca_system_score_codex":0.00014049599,"about_ca_system_score_gemma":0.000045710633,"threshold_uncertainty_score":0.99997693},"labels":[],"label_agreement":null},{"id":"W4391114449","doi":"10.1109/icecet58911.2023.10389366","title":"Analytical and Numerical Modeling of the Thermal Performance of 3D System-in-Package (SiP)","year":2023,"lang":"en","type":"article","venue":"","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":2,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Université du Québec en Outaouais","funders":"","keywords":"Multiphysics; Thermal management of electronic devices and systems; Finite element method; Heat transfer; Computational fluid dynamics; Computer science; Dissipation; Mechanical engineering; Thermal; System in package; Electronic packaging; Software; Electronics; Electronic engineering; Engineering; Aerospace engineering; Mechanics; Structural engineering; Electrical engineering; Telecommunications; Physics","score_opus":0.013243524061001507,"score_gpt":0.20681431465030303,"score_spread":0.19357079058930152,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4391114449","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9918431,0.000056841338,0.0016363385,0.00001865938,0.00003356672,0.00004347112,9.823866e-7,0.00019047159,0.006176594],"genre_scores_gemma":[0.9997397,0.000024032748,0.0001829595,0.0000014585179,0.0000045686947,0.000002274367,1.92153e-7,0.000006453501,0.00003833192],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99962443,0.0000044459607,0.00014011207,0.000053276995,0.00007432184,0.000103426486],"domain_scores_gemma":[0.99981844,0.000020683781,0.00000954088,0.00013417142,0.000008168809,0.000008968749],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00007270632,0.000049921575,0.000120519835,0.000051049432,0.000010295098,0.0000022150969,0.00009511209,0.00004482148,0.0000049239165],"category_scores_gemma":[0.0000112682765,0.00003109747,0.000019265479,0.00025131713,0.00003446548,0.000031584994,0.00005616841,0.00007720065,0.0000038704943],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000009894534,0.000013362959,0.10803248,0.00072138454,0.000042377545,0.000003500799,0.00027570853,0.8736992,0.0031507786,0.008094844,0.00006487146,0.005891633],"study_design_scores_gemma":[0.0000694749,0.000010324203,0.0101930685,0.00004364037,0.000004419481,0.0000011990901,0.00028780426,0.9862775,0.0030634585,0.00001086464,0.0000028539546,0.000035345314],"about_ca_topic_score_codex":0.00001399209,"about_ca_topic_score_gemma":9.3485005e-7,"teacher_disagreement_score":0.112578385,"about_ca_system_score_codex":0.000009523542,"about_ca_system_score_gemma":0.000004022738,"threshold_uncertainty_score":0.1268118},"labels":[],"label_agreement":null},{"id":"W4392152313","doi":"10.1109/globecom54140.2023.10437264","title":"5G DIY: Impact of Different Elements on the Performance of an E2E 5G Standalone Testbed","year":2023,"lang":"en","type":"article","venue":"","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":8,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Testbed; Computer science; Computer architecture; Embedded system; Computer network","score_opus":0.016033757536315085,"score_gpt":0.24536610966285463,"score_spread":0.22933235212653955,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4392152313","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9968557,0.000013002827,0.000025684976,0.000029460076,0.000038332993,0.0001026103,0.000018763685,0.00038538294,0.0025310765],"genre_scores_gemma":[0.9996872,0.000102163394,0.00003542082,0.0000030874044,0.0000070896226,0.000008427005,0.0000060401294,0.000011956942,0.00013862549],"study_design_codex":"observational","study_design_gemma":"observational","domain_scores_codex":[0.9994839,0.0000056268145,0.00015692126,0.0000645189,0.00013470292,0.00015436434],"domain_scores_gemma":[0.999629,0.00004568937,0.000025918682,0.00026628,0.000015737114,0.000017350098],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000077860386,0.00009261515,0.00013345419,0.000070940485,0.000020118268,0.0000047742656,0.00016732907,0.00003751736,0.0001204614],"category_scores_gemma":[0.000020699814,0.000048929836,0.00004221048,0.00018948645,0.000033002372,0.000044989865,0.00002159491,0.00007925049,0.000014150883],"study_design_candidate":"observational","study_design_consensus":"observational","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00017898832,0.00053006,0.54026985,0.000612135,0.0009397832,0.000008964411,0.0013728853,0.036012,0.29399797,0.008783007,0.012772695,0.104521655],"study_design_scores_gemma":[0.00040726058,0.0009558229,0.46275398,0.00006244819,0.000012053479,5.3146107e-7,0.00040077203,0.093053564,0.44177008,0.0003809819,0.00005228426,0.00015022399],"about_ca_topic_score_codex":0.000015198551,"about_ca_topic_score_gemma":0.0000075064545,"teacher_disagreement_score":0.14777207,"about_ca_system_score_codex":0.000030042498,"about_ca_system_score_gemma":0.0000054544,"threshold_uncertainty_score":0.19953008},"labels":[],"label_agreement":null},{"id":"W4392251403","doi":"10.11159/ijmmme.2024.001","title":"Ultra-Thin Cu Nano-Twinned Films Sputtered On Si Wafers for Low Temperature Hybrid Bonding Of Advanced 3D-IC Packages","year":2024,"lang":"en","type":"article","venue":"International Journal of Mining Materials and Metallurgical Engineering","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":false,"route_ca_venue":true,"route_about_ca":false,"ca_institutions":"","funders":"Hsinchu Science Park Bureau, Ministry of Science and Technology, Taiwan","keywords":"Materials science; Wafer; Nano-; Sputtering; Optoelectronics; Thin film; Wafer bonding; Nanotechnology; Metallurgy; Composite material","score_opus":0.006854811426980774,"score_gpt":0.22340837463233706,"score_spread":0.2165535632053563,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4392251403","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99073875,0.0010010402,0.0050116824,0.00015762151,0.0027380607,0.00008819059,0.00006733532,0.0001405741,0.000056746405],"genre_scores_gemma":[0.9910066,0.00034053816,0.008288065,0.000016587655,0.0002328696,0.000008932948,0.000012333217,0.000039944975,0.000054113614],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99890846,0.000008914952,0.0005259842,0.00013873917,0.0002344434,0.00018348588],"domain_scores_gemma":[0.9994739,0.00022754708,0.000088653505,0.000073190706,0.000080021644,0.000056674053],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00027440247,0.00020085377,0.00038442016,0.00028822702,0.000020205516,0.0001235185,0.00021664056,0.00009382834,0.000056335884],"category_scores_gemma":[0.0001895512,0.000160866,0.000119861994,0.00006748908,0.00002685153,0.00021534384,0.000025681737,0.00016075253,0.0000014445933],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00007214881,0.000013272546,0.0000011827736,0.00023490241,0.0003278777,0.00009818804,0.000117108604,0.055436477,0.9404688,0.0012639774,0.000228428,0.0017376774],"study_design_scores_gemma":[0.00072945905,0.00019031197,0.000053887303,0.0015830292,0.000055019354,0.00026183197,0.00015176763,0.015818654,0.97797686,0.00008875659,0.0028560024,0.0002344003],"about_ca_topic_score_codex":5.926608e-7,"about_ca_topic_score_gemma":8.342123e-8,"teacher_disagreement_score":0.039617825,"about_ca_system_score_codex":0.000042081414,"about_ca_system_score_gemma":0.000015134467,"threshold_uncertainty_score":0.65599245},"labels":[],"label_agreement":null},{"id":"W4394748604","doi":"10.3390/s24082486","title":"Tolerance Considerations for MHMIC Manufacturing Process at Millimeter-Wave Band","year":2024,"lang":"en","type":"article","venue":"Sensors","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":3,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Institut National de la Recherche Scientifique","funders":"Fonds de recherche du Québec – Nature et technologies; Natural Sciences and Engineering Research Council of Canada","keywords":"Resistor; Microstrip; Fabrication; Flexibility (engineering); Electronic circuit; Compensation (psychology); Electronic engineering; Materials science; Integrated circuit; Extremely high frequency; Microwave; Optoelectronics; Electrical engineering; Engineering; Telecommunications; Voltage","score_opus":0.02421128381625582,"score_gpt":0.23428296258568038,"score_spread":0.21007167876942456,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4394748604","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9934868,0.0009386106,0.0009709683,0.0002108393,0.00038088995,0.00021846256,0.000034229848,0.0012273339,0.0025318423],"genre_scores_gemma":[0.99775505,0.000049804425,0.0012014646,0.00002039128,0.000060606784,0.00004555645,0.000004329947,0.000027897222,0.0008349022],"study_design_codex":"simulation_or_modeling","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9995198,0.0000025752256,0.00010792889,0.00014276958,0.000051392162,0.00017550234],"domain_scores_gemma":[0.99973476,0.00011045543,0.0000064482174,0.00011573757,0.000011471882,0.000021128873],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000026872982,0.00010447237,0.00009896001,0.00006509423,0.000072980016,0.000045231413,0.00003279868,0.0000689121,0.00006302537],"category_scores_gemma":[0.00002349512,0.00009561743,0.000043933356,0.000044364126,0.000029822615,0.0000555542,0.000008726209,0.00008706687,0.00006558353],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000054694523,0.000058979782,0.00035949764,0.0072432365,0.0010074087,0.0006069338,0.008982526,0.73606163,0.108493395,0.0049297865,0.086976714,0.045225188],"study_design_scores_gemma":[0.00013757397,0.000020196903,0.0001249541,0.00008351943,0.000022039078,0.000060198126,0.00016076647,0.08309508,0.8960137,0.007854298,0.012210668,0.00021702632],"about_ca_topic_score_codex":0.0000012088027,"about_ca_topic_score_gemma":0.000011263005,"teacher_disagreement_score":0.7875203,"about_ca_system_score_codex":0.000040479837,"about_ca_system_score_gemma":0.000006650886,"threshold_uncertainty_score":0.3899166},"labels":[],"label_agreement":null},{"id":"W4399487179","doi":"10.1145/3649476.3658726","title":"Co-DTC: Concentric Trench-Based Integrated Capacitors for Advanced Chiplet-Based Platforms","year":2024,"lang":"en","type":"article","venue":"","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":3,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McGill University","funders":"","keywords":"Capacitor; Trench; Concentric; Computer science; Electrical engineering; Materials science; Engineering; Voltage; Nanotechnology","score_opus":0.010842994819779744,"score_gpt":0.23378224194957323,"score_spread":0.2229392471297935,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4399487179","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.4424996,0.001965693,0.5293204,0.00031116212,0.0019368695,0.0009630606,0.00026661658,0.013028208,0.00970836],"genre_scores_gemma":[0.99304134,0.000017474895,0.006131748,0.0000648286,0.00004567944,0.00014892628,0.00014705802,0.0000469377,0.00035601517],"study_design_codex":"design_other","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9990878,0.000002396155,0.00022228717,0.00021871773,0.00011217596,0.0003565861],"domain_scores_gemma":[0.9995184,0.00017225226,0.000014386734,0.0002095852,0.000029023073,0.000056372992],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000063084546,0.00022916208,0.00021051295,0.00019036511,0.000050132236,0.000057178164,0.0001720823,0.00016433542,0.00018521062],"category_scores_gemma":[0.000053935313,0.00016850277,0.000115988114,0.00047215272,0.00008144293,0.00012391648,0.000004395547,0.00020821622,0.00006479189],"study_design_candidate":"simulation_or_modeling","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0002596477,0.00020249428,0.0020014388,0.0028117236,0.00062095607,0.00012817985,0.0004645482,0.19096197,0.06561062,0.065534495,0.15729485,0.5141091],"study_design_scores_gemma":[0.0010521562,0.00014926729,0.000049697464,0.00011754952,0.00002439247,0.0000015947138,0.00027018663,0.5550767,0.3640582,0.0008536164,0.07796334,0.00038328572],"about_ca_topic_score_codex":0.000010251937,"about_ca_topic_score_gemma":0.000013361701,"teacher_disagreement_score":0.55054176,"about_ca_system_score_codex":0.00013849493,"about_ca_system_score_gemma":0.000067895846,"threshold_uncertainty_score":0.6871343},"labels":[],"label_agreement":null},{"id":"W4400033928","doi":"10.1109/ectc51529.2024.00379","title":"Hybrid Interconnect Infrastructure for Inter-Chiplet Communication in Wafer-Scale Systems","year":2024,"lang":"en","type":"article","venue":"","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":3,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McGill University","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Interconnection; Computer science; Wafer-scale integration; Scale (ratio); Wafer; Embedded system; Electronic engineering; Computer network; Electrical engineering; Engineering; Very-large-scale integration; Physics","score_opus":0.00711913339622728,"score_gpt":0.21727816781127662,"score_spread":0.21015903441504935,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4400033928","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.6887771,0.009669531,0.2778611,0.0006526008,0.0016056796,0.0007844152,0.000063614265,0.00459949,0.015986497],"genre_scores_gemma":[0.9979185,0.00013861264,0.0015421008,0.000012751531,0.00002441061,0.000092835326,0.000024774414,0.00002287176,0.00022317759],"study_design_codex":"design_other","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99953955,0.000008741329,0.00017545487,0.00010644172,0.00003396893,0.0001358327],"domain_scores_gemma":[0.9996132,0.00009040119,0.000006745275,0.00026489425,0.000010720724,0.000014022632],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00009192264,0.00009827056,0.00012567142,0.0001361158,0.000015140694,0.00007122057,0.00022005032,0.00006803045,0.000027670087],"category_scores_gemma":[0.000019374367,0.000081813705,0.000037096106,0.000090548405,0.000023686905,0.0001219062,0.00005943262,0.00019191994,0.000021342945],"study_design_candidate":"simulation_or_modeling","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000041458236,0.000054546217,0.0033555531,0.0047438457,0.00045760366,0.00003065217,0.0037301315,0.04530227,0.010375743,0.20768666,0.2725479,0.45167366],"study_design_scores_gemma":[0.00033617634,0.00006774635,0.00045674155,0.0006948032,0.000018380471,0.000042686657,0.0021398747,0.8439249,0.009003422,0.01758286,0.12537035,0.00036204982],"about_ca_topic_score_codex":0.000031990443,"about_ca_topic_score_gemma":0.00005475913,"teacher_disagreement_score":0.7986226,"about_ca_system_score_codex":0.00007867995,"about_ca_system_score_gemma":0.0000058758724,"threshold_uncertainty_score":0.33362663},"labels":[],"label_agreement":null},{"id":"W4400187751","doi":"10.1109/ojsscs.2024.3421868","title":"High-Speed Wireline Links—Part II: Optimization and Performance Assessment","year":2024,"lang":"en","type":"article","venue":"IEEE Open Journal of the Solid-State Circuits Society","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":3,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Toronto; Huawei Technologies (Canada)","funders":"","keywords":"Wireline; Computer science; Telecommunications","score_opus":0.01774738720353956,"score_gpt":0.26237375769381027,"score_spread":0.24462637049027072,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4400187751","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9668971,0.0015882864,0.025037196,0.0016093098,0.003457304,0.00032780887,0.000026360645,0.00020327086,0.0008534056],"genre_scores_gemma":[0.9915227,0.004764539,0.0026146367,0.00011359924,0.00019084907,0.0000033825058,0.000002011325,0.000038742983,0.0007495002],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99895805,0.000023356253,0.0004229554,0.00013097301,0.00023693423,0.00022772161],"domain_scores_gemma":[0.99948096,0.00003913921,0.000114027716,0.00020546064,0.000100052945,0.000060379036],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0005481555,0.00016999096,0.0002678903,0.000038302012,0.00023279477,0.0002789689,0.0005849976,0.00014257361,0.000033732693],"category_scores_gemma":[0.000011398075,0.0001179393,0.00014853461,0.00026942024,0.000095495656,0.000620467,0.00016139615,0.0008067463,0.0000034975344],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0000032723738,0.000026464153,0.0001822576,0.0001557814,0.00035958888,0.000009385992,0.0012875972,0.94864,0.0034981417,0.00010396186,0.030855443,0.014878089],"study_design_scores_gemma":[0.0011526762,0.00030575957,0.0011936192,0.0010548094,0.0001968682,0.0002671842,0.0006755837,0.96263593,0.019333815,0.0011181312,0.011578642,0.00048696666],"about_ca_topic_score_codex":0.0000036277331,"about_ca_topic_score_gemma":8.22602e-7,"teacher_disagreement_score":0.024625681,"about_ca_system_score_codex":0.00015460486,"about_ca_system_score_gemma":0.00010488277,"threshold_uncertainty_score":0.48094252},"labels":[],"label_agreement":null},{"id":"W4402423606","doi":"10.24908/iqurcp17849","title":"Microfluidics and Chip Development","year":2024,"lang":"en","type":"article","venue":"Inquiry Queen s Undergraduate Research Conference Proceedings","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":true,"route_about_ca":false,"ca_institutions":"Queen's University","funders":"","keywords":"Microfluidics; Chip; Microfluidic chip; Organ-on-a-chip; Nanotechnology; Computer science; Materials science; Telecommunications","score_opus":0.0787896741680134,"score_gpt":0.3289664441138436,"score_spread":0.2501767699458302,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4402423606","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9433017,0.008688637,0.009886199,0.013254202,0.0005729332,0.00070516876,0.0000060307725,0.0046966295,0.018888535],"genre_scores_gemma":[0.9915649,0.0060228077,0.0014325107,0.000013837631,0.000101451515,0.00010091093,0.0000043436094,0.000051534887,0.00070765207],"study_design_codex":"theoretical_or_conceptual","study_design_gemma":"not_applicable","domain_scores_codex":[0.99807906,0.000011455151,0.00026271393,0.00042625956,0.00050906435,0.000711446],"domain_scores_gemma":[0.99935234,0.00010031116,0.000011001703,0.000119825454,0.0002610464,0.00015550455],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00072163646,0.00023426754,0.0002013521,0.00053875876,0.00019304469,0.0006763168,0.0003466968,0.00018736972,0.000016924054],"category_scores_gemma":[0.00010525809,0.00021177718,0.000029130573,0.00068593584,0.0005408685,0.00042602298,0.0002664785,0.0008423364,0.00018247103],"study_design_candidate":"theoretical_or_conceptual","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000020906205,0.00004270805,0.0019241438,0.0028050796,0.0003156247,0.00009816186,0.0111445645,0.000003940883,0.09127979,0.4798246,0.07927306,0.33326742],"study_design_scores_gemma":[0.00045625033,0.00022616697,0.0014343398,0.0017207433,0.000026660458,0.00012397357,0.007218939,0.01311079,0.3106165,0.26369312,0.4001245,0.0012480274],"about_ca_topic_score_codex":0.000015738855,"about_ca_topic_score_gemma":0.0000018741803,"teacher_disagreement_score":0.3320194,"about_ca_system_score_codex":0.00017330135,"about_ca_system_score_gemma":0.00019628825,"threshold_uncertainty_score":0.8636023},"labels":[],"label_agreement":null},{"id":"W4402438894","doi":"10.11159/mmme24.125","title":"Improvement of SLID Bonding for Ni/Ni Joints in 3D-IC Packages and Power Modules through Ag3Sn Intermetallic Interlayer","year":2024,"lang":"en","type":"article","venue":"Proceedings of the World Congress on Mechanical, Chemical, and Material Engineering","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":false,"route_ca_aff":false,"route_ca_fund":false,"route_ca_venue":true,"route_about_ca":false,"ca_institutions":"","funders":"Hsinchu Science Park Bureau, Ministry of Science and Technology, Taiwan","keywords":"Intermetallic; Materials science; Metallurgy; Power (physics); Nickel; Physics; Alloy; Thermodynamics","score_opus":0.007346776238100735,"score_gpt":0.21205149738557724,"score_spread":0.2047047211474765,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4402438894","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99787563,0.00014050526,0.000024907054,0.00014672178,0.0011043533,0.00031097032,0.0000278417,0.00024209029,0.00012698623],"genre_scores_gemma":[0.9975325,0.0001635607,0.0020090353,0.0000118487815,0.00005559135,0.000084775544,0.0000014766549,0.000051104726,0.00009014824],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.998919,0.000001211306,0.00041396124,0.000276347,0.00011783158,0.0002716562],"domain_scores_gemma":[0.9997151,0.000049906073,0.000060680773,0.00010900141,0.000029485402,0.000035835026],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00014158555,0.00025446908,0.0004088364,0.00017125427,0.000020430289,0.00009151143,0.00024501936,0.000114820126,0.0000103979055],"category_scores_gemma":[0.00008005345,0.00019794486,0.00006949665,0.00017262863,0.00007841782,0.00018227426,0.00024014566,0.00019774903,3.3967234e-7],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000032725606,0.000016731803,0.0000070390734,0.0015412543,0.00007140141,5.9294064e-7,0.000038688366,0.000017885326,0.97893953,0.018095033,0.0002984001,0.0009407109],"study_design_scores_gemma":[0.00028376182,0.00007741269,0.000010332608,0.0014488775,0.00003370553,0.0000037827726,0.00010279741,0.004323227,0.9900789,0.0026655057,0.00077120267,0.00020048209],"about_ca_topic_score_codex":0.0000042100246,"about_ca_topic_score_gemma":0.0000010790379,"teacher_disagreement_score":0.0154295275,"about_ca_system_score_codex":0.00004502597,"about_ca_system_score_gemma":0.0000037304942,"threshold_uncertainty_score":0.80719566},"labels":[],"label_agreement":null},{"id":"W4402572169","doi":"10.1109/snpd61259.2024.10673946","title":"Enhancing Throughput in Hyperledger Fabric Through Endorsement Policy Strategy","year":2024,"lang":"en","type":"article","venue":"","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":4,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Algoma University","funders":"","keywords":"Throughput; Computer science; Computer security; Risk analysis (engineering); Business; Telecommunications","score_opus":0.016121093706001628,"score_gpt":0.2605969041928802,"score_spread":0.24447581048687855,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4402572169","genre_codex":"other","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.28422356,0.010214458,0.064745225,0.0007808987,0.0008634623,0.00032387575,0.000006014954,0.0061050896,0.6327374],"genre_scores_gemma":[0.9963431,0.0005898457,0.0015832372,0.000049744336,0.00012009828,0.000030070018,0.0000021894525,0.000029080886,0.0012526846],"study_design_codex":"theoretical_or_conceptual","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9992054,0.0000055822597,0.00020084756,0.00017930115,0.00009179792,0.0003170408],"domain_scores_gemma":[0.9997562,0.000036014935,0.0000047971216,0.00017797809,0.000006566245,0.00001841137],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000057831403,0.00014769846,0.00014070583,0.00016620809,0.000018578925,0.000059824324,0.00012721006,0.000094599956,0.00021019507],"category_scores_gemma":[0.000014318156,0.00012360435,0.000043130283,0.0005358602,0.000026408952,0.000233366,0.000046466554,0.00020242076,0.00033919557],"study_design_candidate":"theoretical_or_conceptual","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0000034476282,0.000068990994,0.00042485143,0.00075565185,0.00019260262,0.0002945504,0.0031697256,0.016091239,0.045611184,0.58886707,0.014375056,0.33014563],"study_design_scores_gemma":[0.0009345682,0.00021887149,0.0016698483,0.0006459021,0.00004642565,0.00007836185,0.0077952696,0.06728475,0.5733803,0.11970178,0.22651969,0.0017242554],"about_ca_topic_score_codex":0.00026083353,"about_ca_topic_score_gemma":0.0001515946,"teacher_disagreement_score":0.7121195,"about_ca_system_score_codex":0.0001505427,"about_ca_system_score_gemma":0.000038093975,"threshold_uncertainty_score":0.5040439},"labels":[],"label_agreement":null},{"id":"W4402978560","doi":"10.1109/access.2024.3469950","title":"Novel Peak-Source-Scanning (NPSS) Model for Thermal Control of Systems-in-Package (SiP)","year":2024,"lang":"en","type":"article","venue":"IEEE Access","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Université de Sherbrooke; Polytechnique Montréal; Cégep de l'Outaouais; Université de Moncton","funders":"","keywords":"Computer science; System in package; Telecommunications","score_opus":0.02854781280970297,"score_gpt":0.2696502051829815,"score_spread":0.24110239237327852,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4402978560","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.24778382,0.0021632602,0.7478616,0.000037251342,0.0004667803,0.00027608455,0.00005766755,0.00062597485,0.0007275565],"genre_scores_gemma":[0.9992273,0.000019525636,0.00032960312,0.000012097515,0.00008645072,0.000111123714,0.0000023244336,0.000050158793,0.00016145951],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99922115,0.000004260306,0.0002522501,0.00016323233,0.00010289018,0.00025623752],"domain_scores_gemma":[0.9996097,0.000098832854,0.000025952148,0.000214641,0.000027057307,0.00002378117],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00012571222,0.00014228135,0.00024694644,0.00016819774,0.000021240081,0.00008825761,0.000375389,0.0001188921,0.000003488407],"category_scores_gemma":[0.000020092852,0.00012743147,0.00007059584,0.0001771335,0.00003058232,0.00026360407,0.000028841092,0.00014884173,0.000004433224],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0000099356885,0.000012106929,0.00018925218,0.0006390129,0.00006303802,0.000004661653,0.0002672036,0.9355741,0.05762687,0.0013649405,0.0005178691,0.0037310242],"study_design_scores_gemma":[0.00040701454,0.000012231968,0.00015841186,0.00020354772,0.000023056804,0.0000028718837,0.00008264492,0.9880671,0.010402672,0.00016820984,0.0003283426,0.00014392573],"about_ca_topic_score_codex":0.00005750835,"about_ca_topic_score_gemma":0.000011402123,"teacher_disagreement_score":0.75144345,"about_ca_system_score_codex":0.00004559189,"about_ca_system_score_gemma":0.000020473424,"threshold_uncertainty_score":0.51965046},"labels":[],"label_agreement":null},{"id":"W4404057227","doi":"10.1109/socc62300.2024.10737758","title":"A Low-voltage-Driven Single-ended Column based SRAM for Low-Power Micro-display","year":2024,"lang":"en","type":"article","venue":"","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Low voltage; Static random-access memory; Column (typography); Low-power electronics; Power (physics); Computer science; Voltage; Random access memory; Power demand; Electrical engineering; Computer hardware; Power consumption; Engineering; Physics; Computer network","score_opus":0.009393973420140329,"score_gpt":0.21281871962219062,"score_spread":0.20342474620205028,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4404057227","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.3803764,0.0017469226,0.5465378,0.0009812353,0.0028174717,0.0015432873,0.00021728942,0.016800625,0.048978955],"genre_scores_gemma":[0.9882996,0.0000083814375,0.009273654,0.00009980409,0.000048539252,0.00010678987,0.000023521943,0.00006535196,0.0020743299],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99906904,0.0000039276506,0.0002002108,0.00025902555,0.000101179605,0.00036660055],"domain_scores_gemma":[0.9994925,0.00013070379,0.000010925996,0.00028495226,0.000029537481,0.000051357183],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000059164664,0.00020307083,0.00019428178,0.00011569454,0.00004828973,0.0001272745,0.00021167766,0.00019706918,0.00032562262],"category_scores_gemma":[0.000037451682,0.00018433487,0.00013584062,0.00023139578,0.000058010242,0.000116812334,0.000039190876,0.0001752343,0.0002012114],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000042493557,0.00023225932,0.00014690516,0.0017624996,0.00035798174,0.00012975324,0.00028605422,0.0105055515,0.6554254,0.016507387,0.29277018,0.021833492],"study_design_scores_gemma":[0.00075731374,0.00020788964,0.00013654123,0.0003270383,0.000051800373,0.000009311504,0.00020325308,0.39640442,0.4869618,0.0010897995,0.11321879,0.00063203624],"about_ca_topic_score_codex":0.0000037913621,"about_ca_topic_score_gemma":0.000019856985,"teacher_disagreement_score":0.60792327,"about_ca_system_score_codex":0.00009067444,"about_ca_system_score_gemma":0.000030742667,"threshold_uncertainty_score":0.7516958},"labels":[],"label_agreement":null},{"id":"W4404411841","doi":"10.1109/pvsc57443.2024.10749563","title":"Full Wafer Spalling and Cell Processing of Devices Grown on GaAs(100) Substrates","year":2024,"lang":"en","type":"article","venue":"","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Ottawa","funders":"","keywords":"Wafer; Materials science; Optoelectronics; Gallium arsenide; Silicon; Spall; Wafer bonding; Composite material","score_opus":0.012780851407276297,"score_gpt":0.21201134883425202,"score_spread":0.1992304974269757,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4404411841","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9628539,0.007343548,0.0020484799,0.000061574494,0.00006930146,0.000045523528,0.0000013580003,0.00092092814,0.02665537],"genre_scores_gemma":[0.99807346,0.00022612585,0.0014922585,0.0000075943312,0.000020047331,0.000003152929,0.0000010096112,0.00001599366,0.00016034511],"study_design_codex":"design_other","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99959826,0.0000016705527,0.00010972572,0.00011032839,0.00006007466,0.0001199586],"domain_scores_gemma":[0.999864,0.000033917113,0.000007795471,0.00006691568,0.0000109851035,0.000016378428],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000040962954,0.00009276529,0.000094252246,0.00008107612,0.000018655004,0.000048224654,0.00006144159,0.00006648779,0.000040347768],"category_scores_gemma":[0.0000033989854,0.0000705202,0.000017397688,0.00012098177,0.00003037011,0.00010293463,0.00001499084,0.00010387897,0.000016008546],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00007537058,0.00018757192,0.012989463,0.027543804,0.00035978173,0.0002033229,0.004326845,0.029886793,0.41220707,0.056343667,0.0049148286,0.45096147],"study_design_scores_gemma":[0.00015366837,0.0001450866,0.0013683799,0.0006336455,0.00003629339,0.000009410922,0.0014182703,0.13937865,0.8511396,0.0028207295,0.0025452017,0.00035105622],"about_ca_topic_score_codex":0.0000064826495,"about_ca_topic_score_gemma":0.000012039505,"teacher_disagreement_score":0.45061043,"about_ca_system_score_codex":0.000007691343,"about_ca_system_score_gemma":0.000006332548,"threshold_uncertainty_score":0.287573},"labels":[],"label_agreement":null},{"id":"W4404577385","doi":"10.1109/epeps61853.2024.10753986","title":"A Robust Optimization Approach for High Bandwidth Memory Interposer Using Machine Learning","year":2024,"lang":"en","type":"article","venue":"","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Advanced Micro Devices (Canada)","funders":"","keywords":"Interposer; Computer science; Bandwidth (computing); Artificial intelligence; Materials science; Computer network","score_opus":0.024560593179463193,"score_gpt":0.20788785502080173,"score_spread":0.18332726184133855,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4404577385","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"methods","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.005718793,0.0008949788,0.9863268,0.000027484648,0.000212594,0.00015192278,0.0000034694444,0.0023599756,0.004303998],"genre_scores_gemma":[0.58627695,0.000037670292,0.41278368,0.0000070184587,0.000042569234,0.000018557375,0.000032532073,0.000034520086,0.00076652534],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9995517,0.0000048368247,0.000110308036,0.00013859085,0.000048666006,0.00014588593],"domain_scores_gemma":[0.99985135,0.000027407257,0.000006964235,0.00008514616,0.000013013634,0.00001612363],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00007491025,0.00010553442,0.00010243605,0.000115810995,0.000043103308,0.00006572723,0.000076328026,0.000084253654,0.000083150495],"category_scores_gemma":[0.000019274876,0.00008807813,0.000037877766,0.00014994622,0.000015784117,0.00013423925,0.00003149834,0.00015033456,0.0000028768684],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0000022886215,0.0000041728285,0.000023320186,0.00013673713,0.000035405625,0.0000011655918,0.000054098364,0.9939443,0.0003693254,0.0011463574,0.00019350451,0.00408936],"study_design_scores_gemma":[0.00010134624,0.000018091581,0.0000018185431,0.000026394557,0.000019960238,0.000006665201,0.000127283,0.99622023,0.0030173266,0.000083200546,0.00026065172,0.00011700856],"about_ca_topic_score_codex":0.000022082673,"about_ca_topic_score_gemma":0.0000018501344,"teacher_disagreement_score":0.5805581,"about_ca_system_score_codex":0.000047022153,"about_ca_system_score_gemma":0.000006202685,"threshold_uncertainty_score":0.3591722},"labels":[],"label_agreement":null},{"id":"W4406671006","doi":"10.1016/b978-0-08-052320-0.50020-9","title":"10.1016/b978-0-08-052320-0.50020-9","year":2000,"lang":"en","type":"book-chapter","venue":"Time to knit","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":false,"route_ca_aff":false,"route_ca_fund":false,"route_ca_venue":true,"route_about_ca":false,"ca_institutions":"","funders":"","keywords":"Transistor; Electronic circuit; Integrated circuit; Materials science; Electrical engineering; Computer science; Engineering; Voltage","score_opus":0.00682236837887963,"score_gpt":0.1497801542063485,"score_spread":0.14295778582746888,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4406671006","genre_codex":"other","genre_gemma":"other","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"other","genre_consensus":"other","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[8.5954946e-7,0.0010156558,0.0000068856866,0.000052759802,0.000008195049,0.00025006782,0.0000857394,0.0027136279,0.9958662],"genre_scores_gemma":[0.000009341776,0.0000070828937,0.00018544187,0.000011585442,0.00020556529,0.000020204287,0.00006073032,0.00018901032,0.99931103],"study_design_codex":"design_other","study_design_gemma":"not_applicable","domain_scores_codex":[0.99876374,0.0000032293362,0.0002980782,0.00033166195,0.00021826694,0.00038503378],"domain_scores_gemma":[0.999132,0.00003411347,0.000037007685,0.00065371866,0.000029162315,0.000114011535],"candidate_categories":["metaepi_narrow","insufficient_payload"],"consensus_categories":["insufficient_payload"],"category_scores_codex":[0.000049689515,0.00048965454,0.0004749841,0.000277043,0.000047452013,0.00004119211,0.00047863094,0.0006243829,0.99369925],"category_scores_gemma":[0.000011938865,0.000513747,0.00015747428,0.0000538343,0.000067615045,0.00006337493,0.00010736378,0.000533845,0.9969032],"study_design_candidate":"not_applicable","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000007950619,0.0000038141284,2.0673308e-9,0.000029083836,0.0000843185,0.000026932792,0.0000041551434,0.00029121822,0.0000053587964,0.000179042,0.34503695,0.6543312],"study_design_scores_gemma":[0.00011162491,0.000069945796,3.5749161e-7,0.00012225575,0.00005008237,0.000015140912,3.5070127e-7,0.00015263619,0.00006517795,0.0008373555,0.99798965,0.0005854213],"about_ca_topic_score_codex":0.0000029343173,"about_ca_topic_score_gemma":1.7836877e-7,"teacher_disagreement_score":0.6537458,"about_ca_system_score_codex":0.00009781837,"about_ca_system_score_gemma":0.000019578396,"threshold_uncertainty_score":0.9997314},"labels":[],"label_agreement":null},{"id":"W4407641131","doi":"10.4071/001c.129736","title":"Fan-Out Embedded Bridge with TSV (FO-EB-T) Package Solution for Enhancing HPC Application","year":2025,"lang":"en","type":"article","venue":"IMAPSource Proceedings","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"MD Precision (Canada)","funders":"","keywords":"Bridge (graph theory); Computer science; Package on package; Parallel computing; Materials science; Operating system; Computational science; Composite material; Layer (electronics)","score_opus":0.006831153377620305,"score_gpt":0.22620059334237128,"score_spread":0.21936943996475097,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4407641131","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.17767599,0.0002826849,0.80928135,0.00039941902,0.00009905634,0.0007242478,0.000008930277,0.0021238206,0.009404498],"genre_scores_gemma":[0.9923965,0.000023385344,0.0061099515,0.00007922821,0.000083962834,0.00045598022,0.000015774684,0.000045489112,0.00078975566],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9989276,0.000001332609,0.00023487183,0.00031310515,0.00012920318,0.0003939185],"domain_scores_gemma":[0.99957156,0.000034272678,0.00006272539,0.00015797533,0.00013345366,0.0000400094],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00014478833,0.00022227794,0.00022938626,0.00017706303,0.00014935584,0.00008528172,0.00023939839,0.00016680107,0.0000033311255],"category_scores_gemma":[0.00007799574,0.00020962648,0.000057719102,0.00033489332,0.00006742832,0.0002260128,0.00005348458,0.00019658769,0.00002666184],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0001379875,0.00006733814,0.0025859221,0.0016970064,0.00020502115,0.0000012364728,0.0039893063,0.00015744452,0.87353134,0.012496656,0.030360498,0.07477024],"study_design_scores_gemma":[0.0013501208,0.00017209162,0.00244798,0.0003756816,0.00013448097,0.000012263814,0.0017880087,0.033499137,0.9175286,0.004689278,0.03729598,0.000706346],"about_ca_topic_score_codex":0.000008217792,"about_ca_topic_score_gemma":0.000017587992,"teacher_disagreement_score":0.8147205,"about_ca_system_score_codex":0.0001365197,"about_ca_system_score_gemma":0.000020141419,"threshold_uncertainty_score":0.854832},"labels":[],"label_agreement":null},{"id":"W4408305062","doi":"10.1109/tvlsi.2025.3545604","title":"Thermal Simulator for Advanced Packaging and Chiplet-Based Systems","year":2025,"lang":"en","type":"article","venue":"IEEE Transactions on Very Large Scale Integration (VLSI) Systems","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":3,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McGill University","funders":"Semiconductor Research Corporation","keywords":"Computer science; Thermal; Simulation; Reliability engineering; Engineering; Thermodynamics; Physics","score_opus":0.007075688862741104,"score_gpt":0.22445527314653746,"score_spread":0.21737958428379636,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4408305062","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.12366631,0.00075478514,0.8699975,0.00007640402,0.00287861,0.00093389634,0.00019354718,0.0010456907,0.00045325115],"genre_scores_gemma":[0.9981974,0.000033242315,0.00034205662,0.000035731588,0.00005219877,0.00060591806,0.000017776187,0.000043651733,0.0006720525],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99869823,0.000045878165,0.0004394451,0.00031198296,0.00016495178,0.0003394929],"domain_scores_gemma":[0.99921554,0.00021484966,0.00005677968,0.00035232597,0.00010253647,0.000057979432],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.00021147518,0.00028878334,0.00036155287,0.000338511,0.0002706916,0.00014345939,0.00014711022,0.000243859,0.0000070817578],"category_scores_gemma":[0.000012305293,0.0002610136,0.00012598949,0.0003037628,0.000048475027,0.0002504909,0.0000011818067,0.00028569723,0.00001214633],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00007545359,0.00008586341,0.000066977096,0.0006491448,0.0001292707,0.0000015986186,0.00018732034,0.968611,0.019734066,0.00086209836,0.00035489633,0.009242285],"study_design_scores_gemma":[0.0012771073,0.00008175304,0.000049942122,0.0006282939,0.00005787056,0.0000023592886,0.0018590397,0.93163604,0.06081324,0.000021467844,0.0032823214,0.00029055346],"about_ca_topic_score_codex":0.000025454538,"about_ca_topic_score_gemma":0.000058731726,"teacher_disagreement_score":0.8745311,"about_ca_system_score_codex":0.00016244048,"about_ca_system_score_gemma":0.000036851496,"threshold_uncertainty_score":0.9999842},"labels":[],"label_agreement":null},{"id":"W4408325543","doi":"10.1109/eptc62800.2024.10909962","title":"Full-Wave Electromagnetic Simulation Approach for Integrated 3D-IC Design","year":2024,"lang":"en","type":"article","venue":"","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Ansys (Canada)","funders":"","keywords":"Electromagnetic simulation; Computer science; Computational electromagnetics; Electronic engineering; Solid modeling; Electromagnetic field; Engineering; Physics; Artificial intelligence","score_opus":0.03057924396194987,"score_gpt":0.22653340691345178,"score_spread":0.19595416295150192,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4408325543","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"methods","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.005896846,0.00086326216,0.98369944,0.000020117535,0.0000905753,0.00030721867,0.0000020215787,0.003152631,0.005967871],"genre_scores_gemma":[0.84724534,0.000020233401,0.1518634,0.0000062131203,0.000024383333,0.000071398244,0.00001757282,0.000025112771,0.0007263522],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9995338,0.0000054541624,0.000104524035,0.0001301066,0.000048219335,0.00017791682],"domain_scores_gemma":[0.99975777,0.00010125235,0.0000040099703,0.0001039579,0.000017504026,0.00001552434],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00006728023,0.00010485452,0.00008715175,0.00010335203,0.000020884076,0.00004895214,0.000057971607,0.00010110534,0.000054108674],"category_scores_gemma":[0.00002778443,0.00008354891,0.00003324906,0.00022861916,0.000014619067,0.00006864606,0.000007685392,0.00010618467,0.000022955053],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000020641943,0.000015788903,0.000001076866,0.00021517514,0.00008219819,0.0000038606627,0.00010075362,0.8533884,0.024337374,0.0045200875,0.007652153,0.10966244],"study_design_scores_gemma":[0.00007459624,0.0001574456,0.0000037027555,0.0000090475605,0.00001656248,0.0000039438137,0.000053045387,0.98819137,0.008201491,0.0011156119,0.0020622904,0.000110909335],"about_ca_topic_score_codex":0.0000013797851,"about_ca_topic_score_gemma":6.000556e-7,"teacher_disagreement_score":0.84134847,"about_ca_system_score_codex":0.000046717138,"about_ca_system_score_gemma":0.000012425628,"threshold_uncertainty_score":0.3407026},"labels":[],"label_agreement":null},{"id":"W4408859820","doi":"10.1109/memc.2024.10942574","title":"Design Challenges for High-Speed Digital Links for Automotive Applications","year":2024,"lang":"en","type":"article","venue":"IEEE Electromagnetic Compatibility Magazine","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of New Brunswick","funders":"","keywords":"Automotive industry; Computer science; Computer architecture; Engineering; Aerospace engineering","score_opus":0.025255893726746224,"score_gpt":0.24576968007797778,"score_spread":0.22051378635123156,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4408859820","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.06951344,0.008351466,0.910406,0.0013520456,0.00045406877,0.0038179518,0.00021511524,0.004611916,0.0012780126],"genre_scores_gemma":[0.9807137,0.00022038155,0.017243471,0.000012667093,0.00019686959,0.0010911498,0.00006831494,0.000069014204,0.00038439233],"study_design_codex":"design_other","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99859273,0.000013237251,0.00033487612,0.00047709778,0.00011977282,0.0004622638],"domain_scores_gemma":[0.9985764,0.00075376383,0.00002414397,0.00044850018,0.0001356466,0.00006156467],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.00019416842,0.0002744475,0.00032162512,0.00013825782,0.00007306136,0.00011619372,0.0002746803,0.00022116477,0.000021563941],"category_scores_gemma":[0.00007854622,0.0002672123,0.00011337728,0.00024876243,0.00009892755,0.00014210558,0.000020591207,0.0002860706,0.00007432333],"study_design_candidate":"design_other","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00016038754,0.0004891156,0.000017111608,0.003405985,0.00051571586,0.000006455437,0.00069564325,0.011751074,0.09705323,0.0239512,0.029840572,0.8321135],"study_design_scores_gemma":[0.0014031548,0.0037078043,0.0012020121,0.0001106155,0.00019753687,0.000021143262,0.00006813834,0.71334505,0.061898887,0.18431555,0.03271033,0.0010197528],"about_ca_topic_score_codex":0.0000012385101,"about_ca_topic_score_gemma":0.00000923217,"teacher_disagreement_score":0.9112003,"about_ca_system_score_codex":0.00012538476,"about_ca_system_score_gemma":0.00004994158,"threshold_uncertainty_score":0.999978},"labels":[],"label_agreement":null},{"id":"W4409554692","doi":"10.5006/s2002-00017","title":"The Rough, the Smooth and the Ugly - an Overview of Anti-Slip Coatings for Structural Steel","year":2002,"lang":"en","type":"article","venue":"","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":true,"ca_institutions":"","funders":"","keywords":"Materials science; Slip (aerodynamics); Metallurgy; Composite material; Engineering; Aerospace engineering","score_opus":0.04218096990001834,"score_gpt":0.2537619743874468,"score_spread":0.21158100448742845,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4409554692","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.97415984,0.017227253,0.00084645,0.0022565536,0.00018454429,0.00062692625,0.000014043656,0.00038292736,0.00430146],"genre_scores_gemma":[0.99746686,0.0016860624,0.00049133715,0.000071017734,0.000024480742,0.000019275385,5.6621263e-7,0.000011170829,0.00022925134],"study_design_codex":"theoretical_or_conceptual","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99956185,0.000014263053,0.00013397649,0.000071355054,0.00007409217,0.00014446896],"domain_scores_gemma":[0.9993989,0.0002658615,0.000031013875,0.0002755467,0.000018506049,0.00001021103],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00015319698,0.00008895138,0.000120530894,0.000009395949,0.00016847644,0.00004648525,0.00026606157,0.00004222601,0.000019627736],"category_scores_gemma":[0.00004998408,0.000033233475,0.000040823346,0.00007039768,0.00023268574,0.00007725077,0.000044047763,0.000089261666,0.0000010849789],"study_design_candidate":"theoretical_or_conceptual","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000028377337,0.000012809627,0.0017608337,0.0002542744,0.00016992848,6.7768326e-7,0.00312534,0.0015975356,0.001475531,0.72086024,0.01458248,0.25613198],"study_design_scores_gemma":[0.0039508073,0.00029411766,0.02592389,0.00008781023,0.00016643228,0.000030750067,0.009166866,0.78135747,0.0121514965,0.064092115,0.10212125,0.000657004],"about_ca_topic_score_codex":0.000031993095,"about_ca_topic_score_gemma":0.000037728503,"teacher_disagreement_score":0.77975994,"about_ca_system_score_codex":0.000004931722,"about_ca_system_score_gemma":0.0000016253239,"threshold_uncertainty_score":0.13552217},"labels":[],"label_agreement":null},{"id":"W4411861781","doi":"10.1016/j.rineng.2025.105965","title":"Reliability analysis based on cascaded-Foster thermal networks for systems-in-package (SiP)","year":2025,"lang":"en","type":"article","venue":"Results in Engineering","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Polytechnique Montréal; Université de Moncton; Université du Québec en Outaouais","funders":"","keywords":"Reliability (semiconductor); Reliability engineering; System in package; Computer science; Engineering; Telecommunications; Physics; Thermodynamics","score_opus":0.00637754601178828,"score_gpt":0.21467906913638565,"score_spread":0.20830152312459738,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4411861781","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.37229326,0.0013480132,0.61670816,0.00018990808,0.0013012948,0.001135707,0.00008574109,0.0017108686,0.0052270223],"genre_scores_gemma":[0.9986273,0.00002253281,0.0010719739,0.000015459109,0.000035385205,0.00013006802,0.000019710602,0.000024947562,0.000052609335],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9987796,0.000014972188,0.00043742926,0.00028285536,0.000094441006,0.00039069273],"domain_scores_gemma":[0.999021,0.00040825093,0.000022789662,0.00050092384,0.000019683413,0.000027339935],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00042164646,0.00020809981,0.0003625579,0.0007104527,0.000018334284,0.000030392812,0.00021191491,0.00023419705,0.0000013429074],"category_scores_gemma":[0.00025735877,0.00020136786,0.000112890724,0.0012118141,0.000013908606,0.00006330205,0.000029156028,0.0003326394,0.0000015127123],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00003907635,0.000016005723,0.0007821343,0.00019143759,0.000055815053,0.000007635486,0.000030320383,0.9972752,0.00020493528,0.00016901524,0.00011991906,0.001108537],"study_design_scores_gemma":[0.0007707845,0.000017847486,0.015719386,0.00021874637,0.00003723819,1.4582467e-7,0.00003703423,0.9817411,0.00064157386,0.000008475007,0.0006248266,0.0001828972],"about_ca_topic_score_codex":0.00002939153,"about_ca_topic_score_gemma":0.000023769539,"teacher_disagreement_score":0.6263341,"about_ca_system_score_codex":0.00024652277,"about_ca_system_score_gemma":0.000010460644,"threshold_uncertainty_score":0.8211543},"labels":[],"label_agreement":null},{"id":"W4412524169","doi":"10.31438/trf.hh2024.111","title":"CONDUCTIVE DIRECT BONDING OF IN-SITU DOPED POLYSILICON FOR MEMS WAFER-LEVEL PACKAGING","year":2024,"lang":"en","type":"article","venue":"","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Materials science; Electrical conductor; Microelectromechanical systems; Wafer; Wafer bonding; Optoelectronics; Doping; Die preparation; Wire bonding; In situ; Electronic engineering; Electrical engineering; Composite material; Engineering; Wafer dicing; Chemistry","score_opus":0.03548111213596963,"score_gpt":0.2616756356644787,"score_spread":0.22619452352850908,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4412524169","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.90518737,0.0020524727,0.0134730255,0.00025163905,0.0005426737,0.0003171733,0.00003923757,0.001558414,0.07657799],"genre_scores_gemma":[0.99716115,0.000028601507,0.0015975948,0.0000059389695,0.000020048677,0.00003431468,0.0000042449547,0.00002394759,0.0011241668],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99943864,0.0000030426802,0.00016846915,0.00014279423,0.000057010933,0.0001900137],"domain_scores_gemma":[0.9997182,0.00011951564,0.000009543105,0.0001235556,0.000013517347,0.000015658494],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00010308334,0.00010698547,0.00019058012,0.00021852324,0.000014146032,0.000019346795,0.00009211828,0.000073084986,0.000017430739],"category_scores_gemma":[0.00003795438,0.00009087161,0.000058625676,0.0002547386,0.000031603122,0.00014093993,0.000029414901,0.00010397671,0.0000077494],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000007859254,0.000015457023,0.00059464714,0.0004382271,0.0001753744,0.000010392391,0.0008393438,0.00056614215,0.9006242,0.06327103,0.0028461919,0.030611135],"study_design_scores_gemma":[0.00019603448,0.00002398992,0.00069414714,0.000120793906,0.00001849383,0.0000025455363,0.0012555508,0.007556549,0.98430246,0.0030533024,0.0026076147,0.00016853648],"about_ca_topic_score_codex":0.000031371525,"about_ca_topic_score_gemma":0.00006464612,"teacher_disagreement_score":0.09197377,"about_ca_system_score_codex":0.00005780895,"about_ca_system_score_gemma":0.000011158241,"threshold_uncertainty_score":0.3705637},"labels":[],"label_agreement":null},{"id":"W4413821529","doi":"10.1021/acsaelm.5c00988","title":"Fast and Cost-Effective Fabrication of Ultrathin (20 μm) Silicon Substrates by Melt-Spinning","year":2025,"lang":"en","type":"article","venue":"ACS Applied Electronic Materials","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Ottawa","funders":"Natural Sciences and Engineering Research Council of Canada; Canada Research Chairs; Canada Foundation for Innovation","keywords":"Fabrication; Spinning; Silicon; Materials science; Nanotechnology; Composite material; Optoelectronics","score_opus":0.003168626684498119,"score_gpt":0.20610801439845436,"score_spread":0.20293938771395623,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4413821529","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9932703,0.0014841083,0.002282634,0.00004635413,0.00006365186,0.0008557128,0.000027504484,0.00038208842,0.00158768],"genre_scores_gemma":[0.99888664,0.00046527534,0.000028805409,0.00002027832,0.000014548054,0.00046012225,0.000049154245,0.000018392027,0.00005677189],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9991559,0.000013991489,0.00025489065,0.00019672813,0.000064348555,0.0003141899],"domain_scores_gemma":[0.9996449,0.00006335417,0.00006296026,0.0001873184,0.00002523464,0.000016272272],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00017383453,0.00016904813,0.00028813,0.000077370794,0.00004475532,0.000039327006,0.00013994348,0.00014788503,0.000020299309],"category_scores_gemma":[0.000020823712,0.00016662657,0.00001300109,0.0001732461,0.000069015434,0.00005469254,0.000029855972,0.00011583054,0.0000053493595],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00001641077,0.000010506704,0.000034743,0.000115487404,0.000060052225,1.1572687e-7,0.00005850131,0.00009261737,0.9605784,0.024794862,0.0007209331,0.013517398],"study_design_scores_gemma":[0.00027959276,0.00003634476,0.00047975872,0.000021889688,0.000025327008,9.019187e-7,0.00010377383,0.000026161384,0.993398,0.0043838033,0.0011101471,0.00013429033],"about_ca_topic_score_codex":0.000024179131,"about_ca_topic_score_gemma":0.000006317153,"teacher_disagreement_score":0.032819636,"about_ca_system_score_codex":0.00008601984,"about_ca_system_score_gemma":0.000023723982,"threshold_uncertainty_score":0.6794835},"labels":[],"label_agreement":null},{"id":"W4413838757","doi":"10.24908/iqurcp19792","title":"Microfluidics and Chip Development","year":2025,"lang":"en","type":"article","venue":"Inquiry Queen s Undergraduate Research Conference Proceedings","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":true,"route_about_ca":false,"ca_institutions":"Queen's University","funders":"","keywords":"Microfluidics; Microfluidic chip; Chip; Organ-on-a-chip; Nanotechnology; Computer science; Biochemical engineering; Materials science; Engineering; Telecommunications","score_opus":0.061139390302666206,"score_gpt":0.3276189985215977,"score_spread":0.2664796082189315,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4413838757","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.92830825,0.002217511,0.011982323,0.013711317,0.0003189175,0.00072260824,0.000002765416,0.0018556127,0.040880676],"genre_scores_gemma":[0.9934,0.0034218344,0.0017634132,0.000037804388,0.000033977005,0.00011023448,0.0000031103682,0.000024288638,0.0012053653],"study_design_codex":"theoretical_or_conceptual","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9982575,0.000013654539,0.00028494754,0.00037061365,0.00038683464,0.00068644364],"domain_scores_gemma":[0.9992005,0.00009100522,0.000019979607,0.00014853741,0.00042916925,0.00011076308],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00064682984,0.00022175362,0.00023517439,0.00059381186,0.00027586552,0.0002994948,0.00043316267,0.00019828475,0.0000080398895],"category_scores_gemma":[0.00019545793,0.00021231374,0.00002451708,0.00077136926,0.00060169573,0.0002653691,0.00036516789,0.00069209724,0.000046226225],"study_design_candidate":"theoretical_or_conceptual","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000043907014,0.000079172765,0.014038393,0.0015329206,0.00030578361,0.000018170596,0.004592471,0.0000047140365,0.07242489,0.60755455,0.07716414,0.2222409],"study_design_scores_gemma":[0.0010428252,0.00013934125,0.007511775,0.0010686567,0.000024105972,0.000019406536,0.008165537,0.0030223024,0.45320028,0.32932413,0.19552918,0.00095249113],"about_ca_topic_score_codex":0.000020679172,"about_ca_topic_score_gemma":0.0000031363677,"teacher_disagreement_score":0.3807754,"about_ca_system_score_codex":0.00017402381,"about_ca_system_score_gemma":0.00022203333,"threshold_uncertainty_score":0.8657903},"labels":[],"label_agreement":null},{"id":"W4415970884","doi":"10.1109/tdmr.2025.3628387","title":"Evolution of Electrical Transmission Characteristics in TSV and TGV Interconnect Structures Under Thermal Loading","year":2025,"lang":"","type":"article","venue":"IEEE Transactions on Device and Materials Reliability","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"123 Certification (Canada)","funders":"Changsha Science and Technology Project; National Social Science Fund of China; National Key Research and Development Program of China","keywords":"Through-silicon via; Interconnection; Thermal shock; Thermal expansion; Thermal; Transmission (telecommunications); Delamination (geology); Electrical impedance","score_opus":0.0077907186649965885,"score_gpt":0.23383079851324015,"score_spread":0.22604007984824356,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4415970884","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.8003435,0.0008082699,0.19756635,0.00015350527,0.0005703265,0.00036836002,0.000053351545,0.000094905896,0.00004142533],"genre_scores_gemma":[0.99731266,0.0020514159,0.0005300415,0.000023872692,0.000017253098,0.000026160247,0.0000021414492,0.00002016374,0.000016307344],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99811107,0.00015355996,0.0007990701,0.0004462354,0.00011968965,0.00037035707],"domain_scores_gemma":[0.9992386,0.00025880462,0.000086638094,0.0002980212,0.000052357285,0.00006558154],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.00044352328,0.00033139225,0.0006762533,0.00035758642,0.00012147734,0.000058211503,0.00013052033,0.00048686788,0.00009209558],"category_scores_gemma":[0.000027884169,0.00030889502,0.00007046482,0.00036398767,0.00021830265,0.00019542155,0.000005270618,0.00039675928,0.0000013087031],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0009589991,0.00035338273,0.0007372311,0.003356877,0.0001641697,0.0000043793584,0.0007797868,0.0036750473,0.81247616,0.0025486618,0.0000062191975,0.1749391],"study_design_scores_gemma":[0.001208802,0.00032915742,0.05150822,0.0009277268,0.00025411596,0.000008388005,0.00046570512,0.008986425,0.9291368,0.0066302274,0.00010042413,0.00044401767],"about_ca_topic_score_codex":0.00033992674,"about_ca_topic_score_gemma":0.000028830813,"teacher_disagreement_score":0.19703631,"about_ca_system_score_codex":0.00032188834,"about_ca_system_score_gemma":0.000079506695,"threshold_uncertainty_score":0.99993634},"labels":[],"label_agreement":null},{"id":"W4416875919","doi":"10.37665/smdluzm31225","title":"Process Challenges and Solutions for Embedding Chip-On-Board into Mainstream Smt Assembly","year":2003,"lang":"","type":"article","venue":"SMTA International","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Current Water Technologies (Canada)","funders":"","keywords":"Rework; Surface-mount technology; Process (computing); Footprint; SMT placement equipment; Embedding; Key (lock); Mount","score_opus":0.03205729180685557,"score_gpt":0.2899041871989923,"score_spread":0.25784689539213673,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4416875919","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.6650551,0.028849961,0.06649383,0.0137557825,0.010098051,0.0020594294,0.00030287346,0.0017705024,0.21161446],"genre_scores_gemma":[0.9912886,0.003827507,0.0038553115,0.000051435356,0.00025636912,0.00021915826,0.000019278703,0.000057053454,0.00042529625],"study_design_codex":"theoretical_or_conceptual","study_design_gemma":"theoretical_or_conceptual","domain_scores_codex":[0.9982492,0.000020071577,0.00037390407,0.0004965562,0.00030583167,0.0005544615],"domain_scores_gemma":[0.9991817,0.00019803453,0.000099337434,0.00025554403,0.00016960755,0.000095792464],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.0002866935,0.0003517019,0.00027437726,0.0003236579,0.00026475984,0.00010547967,0.0003820078,0.0002900929,0.00008432536],"category_scores_gemma":[0.0006164243,0.00037522058,0.00011693296,0.00010518162,0.00014137266,0.00030311325,0.00009541478,0.00033274677,0.000034543624],"study_design_candidate":"theoretical_or_conceptual","study_design_consensus":"theoretical_or_conceptual","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000052720916,0.00028162127,0.00041345807,0.00048310484,0.0007313637,0.000010663035,0.0024928679,0.008045157,0.0006552843,0.8383661,0.0013404175,0.14712727],"study_design_scores_gemma":[0.008056829,0.0015955298,0.008378028,0.0023751205,0.0003680791,0.00019412079,0.024513368,0.33728942,0.034410696,0.41604474,0.16299213,0.0037819415],"about_ca_topic_score_codex":0.000005783477,"about_ca_topic_score_gemma":0.000032882912,"teacher_disagreement_score":0.42232132,"about_ca_system_score_codex":0.00019564606,"about_ca_system_score_gemma":0.00006600115,"threshold_uncertainty_score":0.99987},"labels":[],"label_agreement":null},{"id":"W4416877043","doi":"10.37665/smkxcnw71032","title":"The New Millennium for CCGA - Beyond 2000 I/O","year":2001,"lang":"","type":"article","venue":"SMTA International","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"IBM (Canada)","funders":"","keywords":"Interconnection; Printed circuit board; Microprocessor; Design for manufacturability; Microelectronics; Surface-mount technology; Integrated circuit packaging; Integrated circuit","score_opus":0.011209113812513216,"score_gpt":0.23859206472469427,"score_spread":0.22738295091218105,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4416877043","genre_codex":"other","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.02719823,0.056131583,0.22723497,0.11330433,0.043671608,0.0019503763,0.00043222436,0.0016654304,0.5284112],"genre_scores_gemma":[0.76319844,0.017318258,0.005146464,0.0003886078,0.0035591433,0.00013743952,0.0000735514,0.000106635736,0.21007144],"study_design_codex":"not_applicable","study_design_gemma":"not_applicable","domain_scores_codex":[0.99861556,0.000007301235,0.0003737523,0.0002643111,0.00029050032,0.00044858802],"domain_scores_gemma":[0.9991504,0.00023547855,0.000074694,0.00034472733,0.000116130956,0.000078602636],"candidate_categories":["insufficient_payload"],"consensus_categories":[],"category_scores_codex":[0.00015355399,0.00023733881,0.00015468849,0.00011121763,0.00022646731,0.00019239771,0.0009335877,0.00020454873,0.0010159493],"category_scores_gemma":[0.00020175746,0.00019430656,0.00017572205,0.00014397559,0.00011897823,0.00018922582,0.0001386606,0.00027256765,0.00028804794],"study_design_candidate":"not_applicable","study_design_consensus":"not_applicable","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00011731678,0.000053614378,0.0007372215,0.00001663654,0.0005366296,0.00001185919,0.00030618286,0.0015920845,0.00029140987,0.10282486,0.54118097,0.35233122],"study_design_scores_gemma":[0.00075030077,0.000060191545,0.00071513106,0.00003169972,0.00002508641,0.000026642665,0.00023012143,0.017659958,0.00089353515,0.019208945,0.9601687,0.00022968536],"about_ca_topic_score_codex":0.000040521983,"about_ca_topic_score_gemma":0.00007479749,"teacher_disagreement_score":0.73600024,"about_ca_system_score_codex":0.00022621581,"about_ca_system_score_gemma":0.00012317396,"threshold_uncertainty_score":0.99989724},"labels":[],"label_agreement":null},{"id":"W4416877443","doi":"10.37665/smlbwqg40505","title":"Via-In-Pad Plated Over (VIPPO) Design Considerations for Enterprise Server and Storage Hardware","year":2015,"lang":"","type":"article","venue":"SMTA International","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"IBM (Canada)","funders":"","keywords":"Variety (cybernetics); Printed circuit board; Flash (photography); Component (thermodynamics); Integrated circuit; Computer data storage; Class (philosophy); Flash memory; Reliability (semiconductor)","score_opus":0.04754714328552021,"score_gpt":0.2647121807875149,"score_spread":0.2171650375019947,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4416877443","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.3996152,0.0019345494,0.58297604,0.003875347,0.005556563,0.0017915554,0.0006237549,0.0006649368,0.0029620323],"genre_scores_gemma":[0.9883505,0.00010137286,0.01034679,0.00014095385,0.00013405365,0.00010470705,0.000048899994,0.00004257459,0.0007301424],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9985945,0.00003382799,0.00043746203,0.00035439225,0.00026918552,0.00031058455],"domain_scores_gemma":[0.9990655,0.000294691,0.00008562035,0.00022396447,0.00022057288,0.0001096195],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.00028655262,0.00027374784,0.0002564,0.00030150515,0.000068079484,0.00016444246,0.00021933283,0.00024735983,0.00051411486],"category_scores_gemma":[0.0005192345,0.0003018921,0.000072024435,0.000109071196,0.00009281755,0.0004784148,0.000142116,0.0002792634,0.000041605454],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0019909078,0.0018352446,0.081676796,0.000723428,0.00451407,0.0011078839,0.020186175,0.41837478,0.008455046,0.13261326,0.30135822,0.027164202],"study_design_scores_gemma":[0.006986833,0.00032062706,0.010519101,0.00031577854,0.00008440343,0.00011481286,0.0007668013,0.9067896,0.004401345,0.051136363,0.017643094,0.00092125364],"about_ca_topic_score_codex":0.00005878511,"about_ca_topic_score_gemma":0.00006894366,"teacher_disagreement_score":0.5887353,"about_ca_system_score_codex":0.0003069637,"about_ca_system_score_gemma":0.000109583765,"threshold_uncertainty_score":0.9999433},"labels":[],"label_agreement":null},{"id":"W4416884679","doi":"10.37665/srziido91071","title":"A Novel Approach To 3D Chip Stacking","year":2012,"lang":"","type":"article","venue":"Soldering and Reliability Conferences","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"ON Semiconductor (Canada)","funders":"","keywords":"Application-specific integrated circuit; Flexibility (engineering); Miniaturization; Stacking; Integrated circuit; Chip; Integrated circuit packaging; Process (computing); SMT placement equipment; Electronic component","score_opus":0.03646901156991754,"score_gpt":0.23917216313690312,"score_spread":0.2027031515669856,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4416884679","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.64863926,0.008601867,0.2621562,0.00077481434,0.0020950292,0.000926385,0.000042889216,0.0012349024,0.07552862],"genre_scores_gemma":[0.95030904,0.000819207,0.04835138,0.00005703834,0.0002608229,0.000052271345,0.0000040519635,0.000036705776,0.00010945658],"study_design_codex":"design_other","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9974428,0.000045795332,0.0005312911,0.0005979499,0.00030052784,0.0010816813],"domain_scores_gemma":[0.99865496,0.00020725057,0.00007100295,0.00059145264,0.00010561197,0.00036970017],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.0008921152,0.0004941692,0.00057461695,0.00016839606,0.00030113256,0.00022446025,0.00037670933,0.00042500303,0.000031490414],"category_scores_gemma":[0.00051658414,0.00043548076,0.00009588977,0.00034985942,0.0003789414,0.0004345003,0.00039947193,0.0005982052,0.00003027109],"study_design_candidate":"design_other","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00016168407,0.003207542,0.11530516,0.007843988,0.00092035905,0.0000043886685,0.070713684,0.03733683,0.010027217,0.12116175,0.00072551233,0.6325919],"study_design_scores_gemma":[0.005573782,0.0020631352,0.25785196,0.004710578,0.001433176,0.00041490357,0.1407604,0.2982913,0.021242809,0.008785465,0.24626315,0.012609347],"about_ca_topic_score_codex":0.00031335838,"about_ca_topic_score_gemma":0.000004734422,"teacher_disagreement_score":0.61998254,"about_ca_system_score_codex":0.00007852715,"about_ca_system_score_gemma":0.0000795756,"threshold_uncertainty_score":0.9998097},"labels":[],"label_agreement":null},{"id":"W4416884800","doi":"10.37665/srlytfn28917","title":"Via-In-Pad Plated Over (VIPPO) Design Considerations for Enterprise Server and Storage Hardware","year":2016,"lang":"","type":"article","venue":"Soldering and Reliability Conferences","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"IBM (Canada)","funders":"","keywords":"Variety (cybernetics); Printed circuit board; Flash (photography); Component (thermodynamics); Integrated circuit; Computer data storage; Class (philosophy); Flash memory; Reliability (semiconductor)","score_opus":0.02888450832714165,"score_gpt":0.23810837516048736,"score_spread":0.2092238668333457,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4416884800","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.8531871,0.0016549722,0.14145762,0.0016290187,0.00050654175,0.0010060217,0.000086526416,0.00034803097,0.00012418874],"genre_scores_gemma":[0.9936348,0.002445392,0.0035764182,0.000024681045,0.000035411613,0.00009864554,0.0000022459935,0.000027905466,0.00015448515],"study_design_codex":"observational","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9980414,0.00009101243,0.0005499777,0.00066077715,0.00013812835,0.00051872],"domain_scores_gemma":[0.9979601,0.001338955,0.00008828505,0.00037623098,0.000110629786,0.00012578444],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.00051947543,0.0003993235,0.00053096935,0.00015336038,0.00024808606,0.00017604588,0.00013005124,0.00040443914,0.00016506662],"category_scores_gemma":[0.00058139465,0.00029450635,0.000076019045,0.0001047708,0.00050733733,0.00036712937,0.0001353533,0.00024946954,0.000004124497],"study_design_candidate":"observational","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0015098251,0.0016488332,0.45455158,0.012907149,0.001936325,0.0002556296,0.031566974,0.025669483,0.061346017,0.037410963,0.004305145,0.3668921],"study_design_scores_gemma":[0.016672283,0.0027371878,0.19544408,0.0075550866,0.00060535845,0.00012433117,0.0060304212,0.39640653,0.046458554,0.3160197,0.0065428317,0.0054036356],"about_ca_topic_score_codex":0.00015276507,"about_ca_topic_score_gemma":0.000106121515,"teacher_disagreement_score":0.37073705,"about_ca_system_score_codex":0.00007502374,"about_ca_system_score_gemma":0.00013549098,"threshold_uncertainty_score":0.9999507},"labels":[],"label_agreement":null},{"id":"W4416884804","doi":"10.37665/ppyzcwb14335","title":"Fabrication of 2d And 3d Inductors for Dc-Dc Converters Integrated On Glass Interposer","year":2018,"lang":"","type":"article","venue":"Pan Pacific Symposium","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Institut interdisciplinaire d'innovation technologique; Université de Sherbrooke","funders":"","keywords":"Inductor; Fabrication; Inductance; Microfabrication; Magnetic core; Silicon; Substrate (aquarium); Converters; Interposer","score_opus":0.012784964735673579,"score_gpt":0.2228485629380753,"score_spread":0.21006359820240172,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4416884804","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9083827,0.0006193568,0.06324184,0.0009364323,0.0055995327,0.0018004825,0.0002730813,0.0008223727,0.018324187],"genre_scores_gemma":[0.9976054,0.00035472863,0.0010497487,0.000028396438,0.00018436895,0.00007748143,0.000043288077,0.00007497567,0.0005816537],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9980471,0.000045654182,0.00067723985,0.0005485493,0.00018878882,0.00049266545],"domain_scores_gemma":[0.99855775,0.00019897462,0.00023675298,0.0006237508,0.00028310253,0.00009968204],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.00024295467,0.0004518388,0.0005529293,0.0003834542,0.00011742137,0.00007060795,0.00033037696,0.00046025775,0.000056474695],"category_scores_gemma":[0.00016123617,0.00041999217,0.00011545663,0.00039984426,0.0006597693,0.00019179747,0.000087752225,0.00030664366,0.00006254974],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0011676141,0.0006807133,0.018467985,0.0019834975,0.0018010155,0.0000066814746,0.02390042,0.000095241536,0.6760513,0.013081064,0.019370615,0.24339382],"study_design_scores_gemma":[0.002921034,0.0043765963,0.003663772,0.0012789477,0.00045398867,0.000022684913,0.020167569,0.1021839,0.8243661,0.0014328284,0.03748028,0.0016522746],"about_ca_topic_score_codex":0.000054785352,"about_ca_topic_score_gemma":0.000007776536,"teacher_disagreement_score":0.24174155,"about_ca_system_score_codex":0.00017344553,"about_ca_system_score_gemma":0.000052554606,"threshold_uncertainty_score":0.9998252},"labels":[],"label_agreement":null},{"id":"W4416885086","doi":"10.37665/sraacij89955","title":"Electroplate Bumping without Photoresist and Si Dice Stacking with TSV for 3D Packaging","year":2009,"lang":"","type":"article","venue":"Soldering and Reliability Conferences","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Bumping; Electroplating; Wafer; Soldering; Plating (geology); Deep reactive-ion etching; Flip chip; Stacking; Silicon; Etching (microfabrication)","score_opus":0.010552765656613027,"score_gpt":0.22642328400416972,"score_spread":0.2158705183475567,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4416885086","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9492051,0.004980454,0.041921545,0.00084548315,0.00019760699,0.0007840006,0.00001693797,0.0006544346,0.0013944308],"genre_scores_gemma":[0.9845051,0.0033691903,0.011831681,0.00004448636,0.00009354075,0.0000352689,0.0000054558254,0.000038636605,0.00007662261],"study_design_codex":"design_other","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9974789,0.000041913463,0.00050715567,0.0008597044,0.00022872815,0.00088362396],"domain_scores_gemma":[0.99885213,0.00028581097,0.00015182733,0.00041306182,0.00012952554,0.00016763947],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.0005024463,0.0005758569,0.00073209667,0.00015138654,0.0006343813,0.00047715605,0.00021966202,0.00031439486,0.000009173865],"category_scores_gemma":[0.00018296113,0.00047357928,0.00007026961,0.0002132322,0.000549534,0.000314412,0.00008403025,0.0005602316,9.643338e-7],"study_design_candidate":"design_other","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0011152547,0.00034518738,0.17622449,0.008334474,0.0008760472,0.000050070492,0.011041407,0.0043571047,0.028024118,0.013515918,0.00009865093,0.75601727],"study_design_scores_gemma":[0.00957755,0.0074333283,0.12530068,0.0114066545,0.0016359001,0.00025730254,0.017983165,0.6962584,0.06740586,0.04284239,0.012480481,0.0074182707],"about_ca_topic_score_codex":0.00014370015,"about_ca_topic_score_gemma":0.000070204245,"teacher_disagreement_score":0.748599,"about_ca_system_score_codex":0.000068534944,"about_ca_system_score_gemma":0.00013020572,"threshold_uncertainty_score":0.9997716},"labels":[],"label_agreement":null},{"id":"W4417403970","doi":"10.1109/impact67645.2025.11281554","title":"Enhanced Accuracy DDR5 Memory Channel HVM Profiler and Seamless Efficiency Scalable Design Analyses","year":2025,"lang":"","type":"article","venue":"","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Advanced Micro Devices (Canada)","funders":"","keywords":"Scalability; Channel (broadcasting); Routing (electronic design automation); Volume (thermodynamics); Transmission (telecommunications); Network topology; Key (lock); Design methods","score_opus":0.0420778905675133,"score_gpt":0.3022799644100513,"score_spread":0.26020207384253796,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4417403970","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.051096875,0.011210587,0.84914064,0.00047311743,0.0005136569,0.0011411585,0.00000939061,0.0013927995,0.085021764],"genre_scores_gemma":[0.9817851,0.0023892142,0.0070466804,0.00010052118,0.00004650197,0.00013665683,0.0000034424145,0.000043546603,0.008448308],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9973568,0.00006108529,0.00062905747,0.0007764787,0.00026275753,0.0009138596],"domain_scores_gemma":[0.99834836,0.0005325967,0.00009710962,0.0007534114,0.00014972157,0.00011882619],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.00038496024,0.0005913585,0.00071892637,0.00059632777,0.00033896032,0.0002202799,0.0005776637,0.0004940796,0.0003403587],"category_scores_gemma":[0.0005266616,0.00052553735,0.00012979747,0.0015891849,0.00031437768,0.00043130293,0.00042426804,0.00050278724,0.00011304003],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0003087479,0.0011098518,0.00025482362,0.005101309,0.0026354305,0.00009028349,0.0020956462,0.22566412,0.37000838,0.02933033,0.032721173,0.3306799],"study_design_scores_gemma":[0.0007739182,0.00010873551,0.0003985006,0.0003474904,0.00020087077,0.0000035440867,0.0039618067,0.18329422,0.8087834,0.0013864299,0.00013613643,0.00060495385],"about_ca_topic_score_codex":0.00008101387,"about_ca_topic_score_gemma":0.0000067275237,"teacher_disagreement_score":0.93068826,"about_ca_system_score_codex":0.00012183607,"about_ca_system_score_gemma":0.00017001643,"threshold_uncertainty_score":0.9997196},"labels":[],"label_agreement":null},{"id":"W6889337947","doi":"10.25549/whit-c170-66138","title":"Dodge sedan, J.F. Shaffer, owner, at Forum garage, Southern California, 1931","year":2021,"lang":"en","type":"dataset","venue":"University of Southern California Digital Library","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":true,"ca_institutions":"","funders":"","keywords":"Envelope (radar); Time line; Government (linguistics); Work (physics); Flash (photography)","score_opus":0.004956641709482369,"score_gpt":0.14404762624216094,"score_spread":0.13909098453267857,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W6889337947","genre_codex":"dataset","genre_gemma":"dataset","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"dataset","genre_consensus":"dataset","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.0030156146,0.001107442,0.00013303974,0.00023524929,0.00013226586,0.00023898417,0.9921241,0.0011636934,0.0018496017],"genre_scores_gemma":[0.0007196009,0.00052896317,0.00016683245,0.00010021863,0.000104755556,0.0000011986957,0.99283934,0.00014514434,0.0053939344],"study_design_codex":"not_applicable","study_design_gemma":"not_applicable","domain_scores_codex":[0.99775815,0.00003428048,0.00042795367,0.0006146861,0.0004568204,0.0007081132],"domain_scores_gemma":[0.9983603,0.000097496384,0.00022324394,0.0010231979,0.00004448419,0.00025132135],"candidate_categories":["metaepi_narrow","insufficient_payload"],"consensus_categories":["insufficient_payload"],"category_scores_codex":[0.000048028018,0.0007230695,0.0008486355,0.00034640997,0.0002003724,0.00015162835,0.0012631962,0.000924697,0.0047944593],"category_scores_gemma":[0.000030224533,0.00066594325,0.0005348961,0.0003838547,0.00040184124,0.00027887413,0.0013927944,0.0007248195,0.03348698],"study_design_candidate":"not_applicable","study_design_consensus":"not_applicable","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000051504627,0.000083273226,0.0009921637,0.0004293001,0.00027177492,0.00038577933,0.0000430567,0.00015886682,0.000008192264,0.0000010976914,0.99621284,0.0013621324],"study_design_scores_gemma":[0.0005184118,0.000031931373,0.000001953908,0.00023200556,0.0001275703,0.00002699415,0.0033708112,0.00018581595,0.0001077515,0.00019431021,0.994406,0.00079647114],"about_ca_topic_score_codex":0.0000716341,"about_ca_topic_score_gemma":0.000054262007,"teacher_disagreement_score":0.028692523,"about_ca_system_score_codex":0.00013519773,"about_ca_system_score_gemma":0.00012058537,"threshold_uncertainty_score":0.9995792},"labels":[],"label_agreement":null},{"id":"W6893253187","doi":"10.5281/zenodo.14981108","title":"Fig. 109 in A revision of the genus Sclerocoelus Marshall (Diptera: Sphaeroceridae)","year":2025,"lang":"en","type":"other","venue":"Zenodo (CERN European Organization for Nuclear Research)","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Guelph","funders":"","keywords":"Holotype; Paratype; Genus; Paraphernalia; Scale (ratio)","score_opus":0.017437930856404365,"score_gpt":0.21350917202776815,"score_spread":0.1960712411713638,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W6893253187","genre_codex":"other","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"other","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.00051219657,0.0016210787,0.0012086313,0.00014634621,0.00019000792,0.00058127317,0.00023606204,0.0017995248,0.99370486],"genre_scores_gemma":[0.64699024,0.008874816,0.0012584572,0.00017361193,0.00035689955,2.3656311e-7,0.000994769,0.016305745,0.32504523],"study_design_codex":"not_applicable","study_design_gemma":"not_applicable","domain_scores_codex":[0.99893415,0.000081295686,0.00024889354,0.00025643184,0.0002258912,0.00025332696],"domain_scores_gemma":[0.999205,0.000009812643,0.000082720355,0.00059035,0.00007663796,0.00003546163],"candidate_categories":["insufficient_payload"],"consensus_categories":["insufficient_payload"],"category_scores_codex":[0.00017733508,0.00018434112,0.0002336264,0.0003709002,0.00018385879,0.00010059442,0.0012051299,0.00020192399,0.011320365],"category_scores_gemma":[0.00023313149,0.00016208856,0.00006324761,0.00057898794,0.00011143058,0.0000456178,0.0010405717,0.00039532364,0.0012291222],"study_design_candidate":"not_applicable","study_design_consensus":"not_applicable","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0000070402543,0.00002656409,0.0000042889183,0.00043003523,0.000039989765,0.000006036069,0.00010907083,0.00009845158,0.0001639389,0.0009386111,0.7428305,0.2553455],"study_design_scores_gemma":[0.00023592456,0.000026455376,0.00020645658,0.00063451525,0.00001089618,0.00000742904,0.00004924965,0.00022925739,0.00018676769,0.00005017762,0.99822044,0.00014240676],"about_ca_topic_score_codex":0.00003299432,"about_ca_topic_score_gemma":0.0000022703657,"teacher_disagreement_score":0.6686596,"about_ca_system_score_codex":0.00011767184,"about_ca_system_score_gemma":0.000004017768,"threshold_uncertainty_score":0.99954855},"labels":[],"label_agreement":null},{"id":"W6893361241","doi":"10.5281/zenodo.16576107","title":"Perspectives and Insights on Lipid Modifying Drugs (C10): From Development to New Drug Submission (NDS) Application to Health Canada","year":2025,"lang":"en","type":"article","venue":"Zenodo (CERN European Organization for Nuclear Research)","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":true,"ca_institutions":"","funders":"","keywords":"Drug; Statin; Residual risk; Drug development; Risk factor; Clinical trial; Disease; Public health; Cause of death; Clinical Practice","score_opus":0.012717693033946615,"score_gpt":0.21890174566637471,"score_spread":0.2061840526324281,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W6893361241","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.7867758,0.0013079384,0.1301912,0.017267328,0.00030078823,0.001961945,0.00011911292,0.004290463,0.057785384],"genre_scores_gemma":[0.99671847,0.00010101278,0.0018278607,0.00032998173,0.000038410883,1.8908139e-7,0.00014736966,0.0002837972,0.00055291137],"study_design_codex":"design_other","study_design_gemma":"not_applicable","domain_scores_codex":[0.99909306,0.00003622694,0.0001586019,0.00030512002,0.00019110841,0.00021589776],"domain_scores_gemma":[0.99943095,0.000016617076,0.000021977414,0.00025034224,0.00009006533,0.00019006118],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000105190185,0.000117171294,0.00011728243,0.0002184233,0.00073082966,0.00016468682,0.0003610238,0.000032577613,0.00017055243],"category_scores_gemma":[0.00010837442,0.00012133532,0.000009241369,0.00045455576,0.000016635078,0.00006559747,0.0004063754,0.0001533083,0.0003781872],"study_design_candidate":"not_applicable","study_design_consensus":null,"about_ca_topic_candidate":true,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000030336992,0.00002625445,0.000003179136,0.000053767708,0.000031832515,0.0000013692654,0.016766645,0.0018105794,0.0020858368,0.0028489772,0.34974092,0.6266003],"study_design_scores_gemma":[0.00019399976,0.00003394306,0.00094186334,0.00008143538,0.0000022099039,9.976505e-7,0.0035785183,0.00074788084,0.0034211574,0.00015882008,0.99069864,0.00014053432],"about_ca_topic_score_codex":0.008548162,"about_ca_topic_score_gemma":0.00071649347,"teacher_disagreement_score":0.6409577,"about_ca_system_score_codex":0.0006059363,"about_ca_system_score_gemma":0.000027723081,"threshold_uncertainty_score":0.998054},"labels":[],"label_agreement":null},{"id":"W6977090180","doi":"10.6084/m9.figshare.1333601.v1","title":"Data from Mercury concentrations in multiple tissues of Arctic Iceland Gulls (Larus glaucoides) wintering in Newfoundland","year":2015,"lang":"en","type":"dataset","venue":"Figshare","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":true,"ca_institutions":"","funders":"","keywords":"Mercury (programming language); Arctic; The arctic; MERCURE; Charadriiformes","score_opus":0.08891354549417303,"score_gpt":0.2848332265503135,"score_spread":0.1959196810561405,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W6977090180","genre_codex":"dataset","genre_gemma":"dataset","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"dataset","genre_consensus":"dataset","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.00069894287,0.0052558123,0.0000013140834,0.00000887896,0.00013237291,0.00023259963,0.99351007,0.00010135373,0.000058652015],"genre_scores_gemma":[0.032788232,0.0002487066,0.00007413972,0.000005377014,0.00006987631,0.00005741161,0.9667254,0.000023497214,0.0000073610677],"study_design_codex":"not_applicable","study_design_gemma":"not_applicable","domain_scores_codex":[0.9988936,0.000020265268,0.0003844552,0.00030015965,0.00015823545,0.00024327436],"domain_scores_gemma":[0.9986809,0.00020312805,0.00008539438,0.00095197663,0.00003510815,0.00004348339],"candidate_categories":["metaepi_narrow","insufficient_payload"],"consensus_categories":[],"category_scores_codex":[0.00004820053,0.00024126141,0.00041667296,0.00017695612,0.000012794355,0.0000422026,0.00090716715,0.00034223954,0.010141296],"category_scores_gemma":[0.0011560246,0.00025236656,0.000024740912,0.00018180431,0.000015479298,0.00022661294,0.00041831678,0.00046770295,0.00040965277],"study_design_candidate":"not_applicable","study_design_consensus":"not_applicable","about_ca_topic_candidate":true,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0000047130056,0.00001934795,0.0011974111,0.0003980112,0.00003334085,0.00007618491,0.000038741335,0.00023792863,0.000017049148,1.1480468e-7,0.99764705,0.0003300981],"study_design_scores_gemma":[0.0004758967,0.000017836846,0.0036336835,0.004292075,0.000017480272,0.0000030995423,0.00007861156,0.0021077446,0.00005314249,0.00003210845,0.98900527,0.00028303228],"about_ca_topic_score_codex":0.004930221,"about_ca_topic_score_gemma":0.09782395,"teacher_disagreement_score":0.09289372,"about_ca_system_score_codex":0.00014595682,"about_ca_system_score_gemma":0.000058469977,"threshold_uncertainty_score":0.99999285},"labels":[],"label_agreement":null},{"id":"W6977501516","doi":"10.6084/m9.figshare.26609628.v1","title":"Additional file 1 of Interrupting bedtime to reverse frailty levels in acute care: a study protocol for the Breaking Bad Rest randomized controlled trial","year":2024,"lang":"en","type":"article","venue":"Figshare","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Dalhousie University","funders":"","keywords":"Randomized controlled trial; Protocol (science); Bedtime; Rest (music); Research design","score_opus":0.05668880217107216,"score_gpt":0.33477677631448677,"score_spread":0.27808797414341463,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W6977501516","genre_codex":"dataset","genre_gemma":"protocol","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"protocol","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.000016825126,0.00001343036,0.000016927057,0.000035587615,0.00004571727,0.21544772,0.783437,0.00026231856,0.00072443445],"genre_scores_gemma":[0.0061670174,4.1657856e-8,0.0004461766,0.000015832175,0.00010836057,0.950595,0.04236266,0.000027041107,0.00027785823],"study_design_codex":"not_applicable","study_design_gemma":"randomized_trial","domain_scores_codex":[0.9990498,0.000043007163,0.00042097914,0.00017089267,0.00014341823,0.00017193338],"domain_scores_gemma":[0.9943415,0.0053332364,0.0000600625,0.0001796649,0.00006663014,0.000018898254],"candidate_categories":["insufficient_payload"],"consensus_categories":[],"category_scores_codex":[0.0001300935,0.00015183857,0.00054300274,0.00012935224,0.000041687337,0.000053275253,0.00023270342,0.00008423127,0.65868175],"category_scores_gemma":[0.006703651,0.00009834361,0.00022654647,0.00021224986,0.000008766907,0.00007969148,0.00009862491,0.00019442552,0.00013621448],"study_design_candidate":"not_applicable","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.04694884,0.000019509784,2.8727134e-8,0.00014074346,0.00020747927,0.000009279439,0.0005039175,0.00021675453,0.000004196893,0.000003293226,0.94942164,0.0025242898],"study_design_scores_gemma":[0.56336975,0.00018484378,0.000017777302,0.004992532,0.000046932455,0.000002018648,0.00064693915,0.01127031,0.000046672445,0.000033711753,0.4192171,0.00017139035],"about_ca_topic_score_codex":0.0000051791194,"about_ca_topic_score_gemma":0.00003883127,"teacher_disagreement_score":0.7410744,"about_ca_system_score_codex":0.00006069203,"about_ca_system_score_gemma":0.000061588646,"threshold_uncertainty_score":0.80253804},"labels":[],"label_agreement":null},{"id":"W6979258070","doi":"","title":"Monolithic 3D FPGAs Utilizing Back-End-of-Line Configuration Memories","year":2025,"lang":"en","type":"article","venue":"arXiv (Cornell University)","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"","funders":"Defense Advanced Research Projects Agency; Connaught Fund","keywords":"Interfacing; Logic block; Field-programmable gate array; Block (permutation group theory); Overhead (engineering); Static random-access memory; Logic synthesis; Logic gate; Routing (electronic design automation); Programmable logic array","score_opus":0.05021118597516611,"score_gpt":0.1829062730735403,"score_spread":0.1326950870983742,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W6979258070","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.77586585,0.00035959086,0.1435345,0.00006431689,0.0003393167,0.00013624989,0.0000079463125,0.00070059666,0.07899164],"genre_scores_gemma":[0.997652,0.00028585093,0.0003230731,0.0000136698,0.00001148493,3.0234074e-7,0.000005407991,0.000008719483,0.0016994807],"study_design_codex":"theoretical_or_conceptual","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99949163,0.000012977699,0.00012764843,0.00017547862,0.000028643364,0.00016363028],"domain_scores_gemma":[0.9995691,0.000054822973,0.000032137803,0.00026756435,0.00005269531,0.00002364868],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000057072466,0.00011891866,0.00016142741,0.00018696747,0.0000556646,0.000011371003,0.00020509581,0.00012715033,0.00008952844],"category_scores_gemma":[0.00003096953,0.00013521766,0.000050259107,0.00052626187,0.00012831719,0.00018221965,0.000054113454,0.00014822299,0.00004913675],"study_design_candidate":"simulation_or_modeling","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000051621962,0.000053625117,0.0066598435,0.00034788676,0.00025100884,0.00005693432,0.00025516082,0.32112774,0.0048301234,0.6546648,0.0011161972,0.010585053],"study_design_scores_gemma":[0.0017089602,0.00012194719,0.004592479,0.00032631654,0.00021947875,0.000004213097,0.0038118563,0.7138629,0.2097637,0.050654825,0.014179794,0.0007535111],"about_ca_topic_score_codex":0.000026188858,"about_ca_topic_score_gemma":0.00002527388,"teacher_disagreement_score":0.60401,"about_ca_system_score_codex":0.00006107484,"about_ca_system_score_gemma":0.000029549798,"threshold_uncertainty_score":0.5514017},"labels":[],"label_agreement":null},{"id":"W7006239322","doi":"","title":"Taux de survie et complications d'une prothèse de genou charnière rotatoire avec cône morse spécifique, résultats précoces : une étude de cohorte rétrospective","year":2025,"lang":"en","type":"dissertation","venue":"HAL (Le Centre pour la Communication Scientifique Directe)","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":true,"ca_institutions":"","funders":"","keywords":"WOMAC; Radiological weapon; Prosthesis; Implant; Osteoarthritis; Complication; Arthroplasty","score_opus":0.008393043341303683,"score_gpt":0.2340143124387978,"score_spread":0.22562126909749414,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W7006239322","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.52268666,0.0050066747,0.24399401,0.010547556,0.0003447322,0.003248498,0.0005217617,0.0042495234,0.20940056],"genre_scores_gemma":[0.9431061,0.0039715944,0.033929504,0.00012212587,0.000026747273,0.0012718429,0.0034448726,0.00016239705,0.013964826],"study_design_codex":"theoretical_or_conceptual","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99651724,0.0010980662,0.00063885056,0.0006902093,0.0003435649,0.0007120648],"domain_scores_gemma":[0.995722,0.0007553401,0.00035655822,0.0015485649,0.0014196044,0.0001979564],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.0021045126,0.00056861574,0.0005831544,0.0003703127,0.0004979204,0.0002683867,0.0012962794,0.00057306734,0.00005664764],"category_scores_gemma":[0.0010782647,0.0006522062,0.00022141254,0.0012223248,0.00019429502,0.00020724886,0.00016958112,0.0010750893,0.000030548443],"study_design_candidate":"theoretical_or_conceptual","study_design_consensus":null,"about_ca_topic_candidate":true,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00016789683,0.003054978,0.029794283,0.0048163994,0.0023096607,0.00013795456,0.15838587,0.010649982,0.053168252,0.5409276,0.016599977,0.17998716],"study_design_scores_gemma":[0.0025506478,0.000007058912,0.37770745,0.009693279,0.0006580386,0.00009349876,0.009884157,0.13687198,0.38134977,0.050263155,0.02744834,0.0034726097],"about_ca_topic_score_codex":0.0030560822,"about_ca_topic_score_gemma":0.038345587,"teacher_disagreement_score":0.49066442,"about_ca_system_score_codex":0.00057991565,"about_ca_system_score_gemma":0.0006964531,"threshold_uncertainty_score":0.9995929},"labels":[],"label_agreement":null},{"id":"W7014744863","doi":"","title":"Provident Financial Holdings Reports Second Quarter of Fiscal 2018 Results","year":2018,"lang":"en","type":"other","venue":"","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":false,"route_ca_aff":false,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":true,"ca_institutions":"","funders":"","keywords":"Quarter (Canadian coin); Work (physics); Payment; Earnings; Debt","score_opus":0.0065944313329248695,"score_gpt":0.19496265672775004,"score_spread":0.18836822539482517,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W7014744863","genre_codex":"other","genre_gemma":"other","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"other","genre_consensus":"other","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.0010512042,0.00037487212,0.00037793073,0.00003745739,0.0011006288,0.00022882735,0.00004702881,0.0014382905,0.99534374],"genre_scores_gemma":[0.029111983,0.00006549749,0.0019494332,0.00001640405,0.000432295,0.000021425487,0.000024110748,0.00024071302,0.96813816],"study_design_codex":"not_applicable","study_design_gemma":"not_applicable","domain_scores_codex":[0.9990038,0.0000036575907,0.0003844818,0.00025508492,0.00014252053,0.00021044901],"domain_scores_gemma":[0.9992789,0.000010490716,0.00014612837,0.0005218384,0.000013787076,0.0000288248],"candidate_categories":["insufficient_payload"],"consensus_categories":[],"category_scores_codex":[0.00008220801,0.00022482402,0.00032464275,0.00018399181,0.000010561304,0.000012327152,0.00015428526,0.00054219767,0.004284587],"category_scores_gemma":[0.000058931913,0.00018881075,0.00007846754,0.00008212015,0.00010740518,0.000035847566,0.000053691205,0.00014284303,0.00019235736],"study_design_candidate":"not_applicable","study_design_consensus":"not_applicable","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000003851002,0.0000084622025,0.000060535494,0.00014513225,0.000029410743,0.000028781798,0.000030265524,9.3221763e-7,0.000060489765,0.00012412814,0.998903,0.0006050615],"study_design_scores_gemma":[0.00017089116,0.00007411973,0.00031465982,0.00019346763,0.000015071575,0.000021271591,0.00002338231,0.00003055074,0.0036655972,0.0004798869,0.9947455,0.00026558162],"about_ca_topic_score_codex":0.00005875134,"about_ca_topic_score_gemma":0.00021967985,"teacher_disagreement_score":0.02806078,"about_ca_system_score_codex":0.000026570522,"about_ca_system_score_gemma":0.00001761631,"threshold_uncertainty_score":0.9966256},"labels":[],"label_agreement":null},{"id":"W7115189498","doi":"10.1016/j.microrel.2025.115983","title":"Thermo-mechanical co-design of 2.5D flip-chip packages with silicon and glass interposers via finite element analysis and machine learning","year":2025,"lang":"en","type":"article","venue":"Microelectronics Reliability","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":4,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Ottawa","funders":"","keywords":"Interposer; Finite element method; Strain energy density function; Ball grid array; Pareto principle; Decoupling (probability); Die (integrated circuit); Energy (signal processing)","score_opus":0.006119501206106753,"score_gpt":0.20731367600679299,"score_spread":0.20119417480068624,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W7115189498","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.7246709,0.0016098234,0.27303866,0.00012977261,0.000012629577,0.00022626051,0.00000874618,0.00021037731,0.0000928622],"genre_scores_gemma":[0.9968865,0.0009001194,0.002109401,0.000016331307,0.0000028983693,0.000018637176,0.000013974628,0.000016796104,0.00003532637],"study_design_codex":"bench_or_experimental","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99886197,0.00008427082,0.0002971557,0.00033770915,0.000097690456,0.0003212],"domain_scores_gemma":[0.99917626,0.00027528108,0.000057729918,0.00041114903,0.0000430702,0.000036482757],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00045742778,0.00021885695,0.0004173383,0.00019302573,0.00006694826,0.000026802738,0.00019805519,0.00013503214,0.000015734897],"category_scores_gemma":[0.00011627658,0.00018089214,0.00006288751,0.00047157047,0.00015603032,0.000052224772,0.00012277145,0.00046042886,7.133243e-7],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00074657635,0.00031243646,0.1722841,0.000974512,0.0045617865,0.00001131323,0.000908098,0.13471778,0.5678556,0.0021129716,0.00016254044,0.11535228],"study_design_scores_gemma":[0.0009344087,0.0008461152,0.008608513,0.000059832215,0.00060950976,0.000004968416,0.00019702068,0.60229295,0.38228,0.003116908,0.0006573975,0.000392403],"about_ca_topic_score_codex":0.00006500715,"about_ca_topic_score_gemma":0.00010568882,"teacher_disagreement_score":0.46757516,"about_ca_system_score_codex":0.00012416455,"about_ca_system_score_gemma":0.000032325464,"threshold_uncertainty_score":0.7376568},"labels":[],"label_agreement":null},{"id":"W7124142415","doi":"10.37665/levbmop59194","title":"Static &amp; Dynamic Characteristics of Interposer Sockets","year":2002,"lang":"","type":"article","venue":"Specialized and Legacy Electronics Manufacturing Conferences","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Hewlett-Packard (Canada)","funders":"","keywords":"Interposer; Reliability (semiconductor); Component (thermodynamics); Work (physics); New product development","score_opus":0.017256751775784323,"score_gpt":0.23466141281898045,"score_spread":0.21740466104319614,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W7124142415","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9793616,0.00855363,0.001452458,0.0006666369,0.0007619232,0.0004297668,0.000068670786,0.00039754092,0.008307793],"genre_scores_gemma":[0.9427011,0.05559305,0.00031307194,0.000031348434,0.00012801838,0.000016419835,0.000051141054,0.00005174635,0.0011141276],"study_design_codex":"design_other","study_design_gemma":"not_applicable","domain_scores_codex":[0.9968568,0.000083700914,0.00097198965,0.00058119063,0.0003773651,0.0011289441],"domain_scores_gemma":[0.99868286,0.00019345741,0.00037794656,0.0005310327,0.00007405151,0.00014065989],"candidate_categories":["metaepi_narrow","insufficient_payload"],"consensus_categories":[],"category_scores_codex":[0.00022416885,0.0006739307,0.0010717923,0.00048337973,0.00018061073,0.00038106955,0.00057193916,0.00038932863,0.0024053045],"category_scores_gemma":[0.00008316973,0.0006637733,0.0001831502,0.00025061003,0.0004639135,0.00044200162,0.00020437092,0.0009132336,0.00009838925],"study_design_candidate":"design_other","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000119776385,0.00021676195,0.00050268834,0.0016822084,0.0009082279,0.0000335766,0.0058768303,0.00007419848,0.0020082716,0.021865312,0.0012810453,0.9654311],"study_design_scores_gemma":[0.0053801974,0.0015552411,0.022906262,0.0018668895,0.0010307793,0.00011326765,0.0036849573,0.051519856,0.074674,0.06373284,0.76895446,0.0045812605],"about_ca_topic_score_codex":0.000049961167,"about_ca_topic_score_gemma":0.00014131275,"teacher_disagreement_score":0.9608498,"about_ca_system_score_codex":0.00015023633,"about_ca_system_score_gemma":0.00012812715,"threshold_uncertainty_score":0.99958134},"labels":[],"label_agreement":null},{"id":"W7125814242","doi":"10.4071/001c.147811","title":"Heterogenous Integration in High Volume: Now and Looking Forward","year":2025,"lang":"en","type":"article","venue":"IMAPSource Proceedings","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Advanced Micro Devices (Canada)","funders":"","keywords":"Bandwidth (computing); Dram; Incentive; Presentation (obstetrics); Mirroring; Workstation; Chip; Gigabit; Vertical integration","score_opus":0.0032963036983171537,"score_gpt":0.1910035763883239,"score_spread":0.18770727269000675,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W7125814242","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.98993665,0.0005755261,0.004081404,0.00034201454,0.00008544062,0.00013599545,0.0000012462899,0.0006518821,0.0041898224],"genre_scores_gemma":[0.998183,0.00010201657,0.0012882979,0.000051475246,0.000017903423,0.000032561395,0.0000016296854,0.00001545825,0.0003076362],"study_design_codex":"design_other","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99941635,0.0000010447445,0.00015455106,0.00015703308,0.000063033476,0.0002079637],"domain_scores_gemma":[0.99986476,0.00001037536,0.000018171473,0.00005555311,0.00003169686,0.00001945459],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00007603873,0.00012465437,0.00014638285,0.00022855318,0.000042546377,0.0000713778,0.00011276523,0.000111087786,0.0000042372926],"category_scores_gemma":[0.000045331282,0.00012370433,0.000020046684,0.00028477615,0.000045205208,0.00016621122,0.000057550355,0.0001980701,0.000009395614],"study_design_candidate":"observational","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000054719698,0.00009195169,0.44022945,0.0012157311,0.00014764909,0.000019647405,0.006655056,0.0009145091,0.071094766,0.01963025,0.017205784,0.4427405],"study_design_scores_gemma":[0.004687969,0.00040199756,0.20512494,0.0026676566,0.0001778772,0.0001249619,0.015385528,0.25071973,0.38650197,0.065108165,0.066665135,0.0024340746],"about_ca_topic_score_codex":0.000013339036,"about_ca_topic_score_gemma":0.00001603605,"teacher_disagreement_score":0.44030643,"about_ca_system_score_codex":0.00007150085,"about_ca_system_score_gemma":0.000004509245,"threshold_uncertainty_score":0.50445163},"labels":[],"label_agreement":null},{"id":"W7161947999","doi":"10.82308/11970","title":"Three-dimension integrated circuit design and through-silicon via characterization","year":2012,"lang":"en","type":"dissertation","venue":"","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":true,"ca_institutions":"","funders":"","keywords":"Boundary scan; Reel; Domain (mathematical analysis)","score_opus":0.01993409848426089,"score_gpt":0.2151803225266397,"score_spread":0.19524622404237882,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W7161947999","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.35025364,0.0013534517,0.6381678,0.000008840252,0.0010449018,0.00057307666,0.000007817896,0.0026745757,0.0059158676],"genre_scores_gemma":[0.99351484,0.0007341662,0.0021081103,0.000015306518,0.0000617955,0.00006610346,0.0021909827,0.00009791174,0.0012108004],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99923474,0.000009205217,0.00022308422,0.00019950776,0.000105162726,0.00022831706],"domain_scores_gemma":[0.9996343,0.000025102452,0.000057790265,0.00020233214,0.000048512687,0.000031962845],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.000063365515,0.0002940315,0.0002671891,0.00011427331,0.00005179298,0.00003232807,0.00009729548,0.000573663,0.00019369875],"category_scores_gemma":[0.00001291028,0.00025657148,0.000032620082,0.00015694449,0.000020146766,0.00032490812,0.000011145015,0.0002807161,0.0000719039],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000029441391,0.000027277583,0.000315417,0.00040116344,0.00015736737,0.0000043407986,0.0008822578,0.00011327603,0.76122206,0.0035654975,0.0010165928,0.23226528],"study_design_scores_gemma":[0.0009493881,0.0002333851,0.08781744,0.00079141953,0.00042200272,0.00003794044,0.0011179362,0.08424544,0.80245996,0.0100513585,0.009155452,0.0027183094],"about_ca_topic_score_codex":0.000047559664,"about_ca_topic_score_gemma":0.000055830806,"teacher_disagreement_score":0.6432612,"about_ca_system_score_codex":0.00006271432,"about_ca_system_score_gemma":0.00001621439,"threshold_uncertainty_score":0.9999887},"labels":[],"label_agreement":null},{"id":"W984154779","doi":"10.1109/mnrc15848.2009.5338940","title":"Thick THB sacrificial layer and metal encapsulation process","year":2009,"lang":"en","type":"article","venue":"","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":5,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Alberta","funders":"","keywords":"Materials science; Wafer; Resist; Encapsulation (networking); Microelectromechanical systems; Optoelectronics; Layer (electronics); Wafer-level packaging; Nanotechnology; Computer science","score_opus":0.011553623864998638,"score_gpt":0.2288184487274247,"score_spread":0.21726482486242607,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W984154779","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.94359773,0.00029390687,0.006785277,0.00023686644,0.00006255193,0.00006780522,6.7009603e-7,0.0011100781,0.0478451],"genre_scores_gemma":[0.99907243,0.000026202822,0.000712738,0.00003691981,0.000025839892,0.0000017557503,0.0000011095074,0.00000414618,0.00011884426],"study_design_codex":"design_other","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99974024,0.0000016069429,0.000060247115,0.000062473475,0.000050803294,0.000084626474],"domain_scores_gemma":[0.99990976,0.0000051195243,0.0000049112623,0.000057386354,0.000010400936,0.0000124035405],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000028290138,0.000055861907,0.00005877682,0.00003204147,0.000022055636,0.000014141931,0.000039100883,0.00006317332,0.000032106593],"category_scores_gemma":[0.000011586959,0.00004472385,0.000010091347,0.000065176355,0.000011850287,0.00010019244,0.0000041848534,0.000065987115,0.000012643581],"study_design_candidate":"design_other","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000022067488,0.00009604157,0.0037534959,0.00014559178,0.00011343307,0.000019874142,0.00234838,0.010673157,0.09865902,0.24354298,0.005192354,0.6354336],"study_design_scores_gemma":[0.0009898683,0.00028054143,0.116408624,0.000044946286,0.000082162944,0.0000490452,0.0023168598,0.18868804,0.50924855,0.17324556,0.007486802,0.0011590008],"about_ca_topic_score_codex":0.000001948682,"about_ca_topic_score_gemma":0.0000028554912,"teacher_disagreement_score":0.6342746,"about_ca_system_score_codex":0.00000493888,"about_ca_system_score_gemma":0.000002763962,"threshold_uncertainty_score":0.18237856},"labels":[],"label_agreement":null}]}