{"meta":{"query_hash":"72556233ef02","filters":{"topic":"Advancements in Semiconductor Devices and Circuit Design"},"cohort_total":385,"direct_labels_cover":0,"predictions_cover":385,"exported":385,"export_cap":100000,"truncated":false,"label_status":"direct model label, unvalidated","prediction_status":"machine_predicted_unvalidated (Codex and Gemma teacher distillation)","score_status":"score_only:v0-immature-baseline","snapshot":{"source":"OpenAlex, pinned release, all 482 partitions","release":"2026-06-24","frame_built":"2026-07-12"},"permalink":"https://metacan.xera.ac/q/72556233ef02","api":"https://metacan.xera.ac/api/v1/cohort?topic=Advancements+in+Semiconductor+Devices+and+Circuit+Design"},"results":[{"id":"W119358716","doi":"","title":"Guideline on Quantitatively Analyzing Analog Nano-Scale CMOS Circuits Using Ultra-Compact Model","year":2014,"lang":"en","type":"article","venue":"Microelectronics and solid state electronics","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Dalhousie University","funders":"","keywords":"CMOS; Analogue electronics; Electronic circuit; Electronic engineering; MOSFET; Scale (ratio); Amplifier; Distortion (music); Nonlinear system; Operational amplifier; Computer science; Transistor; Voltage; Electrical engineering; Engineering; Physics","score_opus":0.01816383103023609,"score_gpt":0.2720141023552625,"score_spread":0.2538502713250264,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W119358716","genre_codex":"methods","genre_gemma":"methods","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"methods","genre_consensus":"methods","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.0013684055,0.0019746,0.9822635,0.0010282812,0.00024210836,0.00012423853,0.00037638601,0.0008396605,0.011782861],"genre_scores_gemma":[0.11503279,0.0099578705,0.84842336,0.0022548204,0.0006656883,0.0016805164,0.0012537154,0.001434824,0.019296369],"study_design_codex":"theoretical_or_conceptual","study_design_gemma":"not_applicable","domain_scores_codex":[0.9991373,0.00015252379,0.000052938518,0.0001236993,0.00049804343,0.00003565313],"domain_scores_gemma":[0.9988537,0.0004255589,0.000060677314,0.0003000188,0.00033104606,0.000029022836],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0011988094,0.0020408614,0.001282684,0.0013356622,0.0005907476,0.00149168,0.0030544447,0.0017324744,0.0058633536],"category_scores_gemma":[0.0028984768,0.00083735446,0.0013489351,0.00054913445,0.001231071,0.0038784752,0.0014188348,0.0035604024,0.003437114],"study_design_candidate":"not_applicable","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00008162899,0.00011875488,0.0003727964,0.0012072114,0.000080068465,0.00041156387,0.00029401673,0.12252556,0.07147238,0.7162899,0.022950215,0.06419594],"study_design_scores_gemma":[0.00003739459,0.00013676181,0.00037787046,0.00030469795,0.00005983793,0.00042881756,0.000060964037,0.58251244,0.0184825,0.30617768,0.091349766,0.00007134314],"about_ca_topic_score_codex":0.0017930648,"about_ca_topic_score_gemma":0.0012497826,"teacher_disagreement_score":0.0058633536,"about_ca_system_score_codex":0.0012743056,"about_ca_system_score_gemma":0.0009704539,"threshold_uncertainty_score":0.019614816},"labels":[],"label_agreement":null},{"id":"W1481742732","doi":"10.1109/northc.1995.484957","title":"What will semiconductors be like a quarter of a century from now?","year":2002,"lang":"en","type":"article","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":false,"route_ca_aff":false,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":true,"ca_institutions":"","funders":"","keywords":"Quarter (Canadian coin); Semiconductor; Computer science; Engineering physics; Optoelectronics; Engineering; Materials science; History; Archaeology","score_opus":0.020037755671885746,"score_gpt":0.21512268882103658,"score_spread":0.19508493314915082,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1481742732","genre_codex":"commentary","genre_gemma":"commentary","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"commentary","genre_consensus":"commentary","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.010100246,0.12995112,0.0016060305,0.6977178,0.092993654,0.000013806281,0.00027595283,0.00011790172,0.06722351],"genre_scores_gemma":[0.27025282,0.23008843,0.003922037,0.3569379,0.03273352,0.00006725843,0.0006202537,0.00028267736,0.1050951],"study_design_codex":"not_applicable","study_design_gemma":"theoretical_or_conceptual","domain_scores_codex":[0.9978296,0.00056105724,0.00008985797,0.00023716953,0.00075939496,0.00052300346],"domain_scores_gemma":[0.9960258,0.0006123571,0.00038007906,0.00019532019,0.0014483335,0.0013381214],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0035820329,0.0006226475,0.00078270305,0.0007520721,0.0045961207,0.008765198,0.0008978423,0.004204679,0.010201483],"category_scores_gemma":[0.010631384,0.00020527489,0.0004854063,0.0010991032,0.005822107,0.0140018305,0.0021342137,0.0068135243,0.0057513886],"study_design_candidate":"theoretical_or_conceptual","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00020687447,0.00008791595,0.0030505536,0.0005349318,0.000059343038,0.00030301136,0.0025906889,0.00019151912,0.00075687125,0.23695873,0.59503204,0.16022758],"study_design_scores_gemma":[0.000005822651,0.000048597187,0.0012737588,0.0003828072,0.000016963952,0.00015012418,0.0043914686,0.000036315505,0.00020911309,0.05571346,0.9377455,0.000026166435],"about_ca_topic_score_codex":0.005093962,"about_ca_topic_score_gemma":0.008292747,"teacher_disagreement_score":0.010201483,"about_ca_system_score_codex":0.0032166326,"about_ca_system_score_gemma":0.0047848695,"threshold_uncertainty_score":0.034127355},"labels":[],"label_agreement":null},{"id":"W1484077497","doi":"10.1109/iscas.2002.1010946","title":"Temperature sensor applications of diode-connected MOS transistors","year":2003,"lang":"en","type":"article","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":49,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Alberta","funders":"","keywords":"Transistor; Transconductance; Materials science; Diode; Optoelectronics; CMOS; Electrical engineering; Temperature coefficient; Biasing; Static induction transistor; Voltage; Threshold voltage; Engineering","score_opus":0.007538848277499301,"score_gpt":0.2012487725744111,"score_spread":0.1937099242969118,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1484077497","genre_codex":"empirical","genre_gemma":"methods","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"methods","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.6582113,0.017498506,0.27870616,0.0010842313,0.0008604687,0.0001928285,0.00092464034,0.0037874964,0.03873447],"genre_scores_gemma":[0.9566326,0.0024957273,0.035982996,0.00019548456,0.000077650046,0.000031578988,0.00012694536,0.000049320715,0.00440775],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99986863,0.000021343312,0.0000073911774,0.00003961016,0.000049324284,0.0000136139815],"domain_scores_gemma":[0.9997303,0.00010162234,0.000035482924,0.000029585635,0.00008772958,0.0000152625],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00011647056,0.0003322889,0.00018755853,0.0002319448,0.00015612118,0.000358953,0.00052089646,0.00039642473,0.0016112054],"category_scores_gemma":[0.00052536145,0.0001574289,0.000177002,0.00029688602,0.0001730778,0.00044768912,0.00025403625,0.00025489775,0.00053130096],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00009984206,0.000016570979,0.00074467534,0.00017587082,0.000014611988,0.0001581901,0.000057834208,0.0007275738,0.9703012,0.0020209863,0.00074945705,0.024933258],"study_design_scores_gemma":[0.000011904535,0.00019675022,0.0013363318,0.000023731101,0.000029441202,0.0008172113,0.0000284802,0.010342485,0.9740216,0.0010442925,0.012131156,0.000016508404],"about_ca_topic_score_codex":0.00014501136,"about_ca_topic_score_gemma":0.00024113599,"teacher_disagreement_score":0.0016112054,"about_ca_system_score_codex":0.00022245136,"about_ca_system_score_gemma":0.00008854137,"threshold_uncertainty_score":0.0053899884},"labels":[],"label_agreement":null},{"id":"W1486302018","doi":"10.1007/0-387-29749-9","title":"Thermal and Power Management of Integrated Circuits","year":2006,"lang":"en","type":"book","venue":"Kluwer Academic Publishers eBooks","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":90,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"University of Waterloo","keywords":"Thermal management of electronic devices and systems; Electronic circuit; Integrated circuit; Power (physics); Thermal; Power management; Electronic engineering; Computer science; Electrical engineering; Reliability engineering; Engineering; Mechanical engineering; Physics","score_opus":0.013685758050674584,"score_gpt":0.21782012930776792,"score_spread":0.20413437125709333,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1486302018","genre_codex":"other","genre_gemma":"other","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"other","genre_consensus":"other","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.0030835976,0.36219773,0.12059672,0.0018303246,0.006115404,0.00013374611,0.00043168297,0.0022073183,0.5034035],"genre_scores_gemma":[0.025585527,0.16935956,0.04007161,0.001768733,0.0024566895,0.00019911438,0.00062689354,0.00060484203,0.75932705],"study_design_codex":"design_other","study_design_gemma":"not_applicable","domain_scores_codex":[0.9997547,0.000013983445,0.000006793417,0.000035952464,0.00017147463,0.000017074186],"domain_scores_gemma":[0.9998958,0.000034820514,0.0000076121128,0.000019303245,0.000033006472,0.000009451931],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00016285687,0.0015136631,0.0009704078,0.0007294021,0.0004890325,0.0014702505,0.0011399932,0.0008968795,0.020307545],"category_scores_gemma":[0.00031908613,0.00046805674,0.00046851227,0.0017436045,0.0006134301,0.001656545,0.00074684736,0.0015573795,0.011655097],"study_design_candidate":"not_applicable","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00006949602,0.00008682696,0.00010629276,0.0015977761,0.000042050204,0.0001767797,0.00021240648,0.006815787,0.027820151,0.07524678,0.25143138,0.63639426],"study_design_scores_gemma":[0.0000128306865,0.000083983636,0.00039709045,0.00031366159,0.000023176432,0.0005763437,0.000034078425,0.0051978957,0.0050725304,0.04099602,0.9472733,0.000019134302],"about_ca_topic_score_codex":0.00045719408,"about_ca_topic_score_gemma":0.00078353175,"teacher_disagreement_score":0.020307545,"about_ca_system_score_codex":0.0004770585,"about_ca_system_score_gemma":0.0004152283,"threshold_uncertainty_score":0.06793547},"labels":[],"label_agreement":null},{"id":"W1497065696","doi":"","title":"A 100 MHz 7.84 mm^2 31.7 msec 439 mW 512-Point 2-Dimensional FFT Single-Chip Processor","year":2004,"lang":"en","type":"article","venue":"IEICE Transactions on Electronics","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":2,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Hatch (Canada)","funders":"","keywords":"Fast Fourier transform; Chip; Point (geometry); Computer hardware; Computer science; Electrical engineering; Embedded system; Physics; Engineering; Mathematics; Algorithm","score_opus":0.016561792213902846,"score_gpt":0.22833087533330718,"score_spread":0.21176908311940434,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1497065696","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.07874927,0.0012547374,0.70913094,0.0015115526,0.001660903,0.0011554911,0.008074875,0.07269806,0.12576418],"genre_scores_gemma":[0.2821132,0.0006392095,0.59262043,0.0015740419,0.0005911862,0.0017228785,0.013880894,0.0034496896,0.10340838],"study_design_codex":"design_other","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.999463,0.000045834124,0.00003500971,0.00017430277,0.00018004044,0.0001018039],"domain_scores_gemma":[0.9995389,0.00014501986,0.000016333976,0.00006925927,0.000168268,0.00006233569],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00054844446,0.0014885092,0.0015190924,0.001293676,0.00075452717,0.0012616881,0.0016908717,0.0008718532,0.17176405],"category_scores_gemma":[0.0012241238,0.0006158917,0.00039841543,0.0016716009,0.00030119414,0.0010796274,0.00093161955,0.00078517606,0.049083717],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.002193735,0.00045771818,0.0022552132,0.0008698478,0.0002542692,0.000535039,0.00038238824,0.0057879956,0.24022247,0.0085790455,0.22849692,0.50996536],"study_design_scores_gemma":[0.0022461242,0.002552359,0.013482599,0.00039783397,0.0004738424,0.0031957228,0.0006470675,0.2580909,0.21042149,0.012920897,0.49515617,0.0004150365],"about_ca_topic_score_codex":0.0025907725,"about_ca_topic_score_gemma":0.0047657616,"teacher_disagreement_score":0.17176405,"about_ca_system_score_codex":0.00049545616,"about_ca_system_score_gemma":0.0009979574,"threshold_uncertainty_score":0.57460797},"labels":[],"label_agreement":null},{"id":"W1497612144","doi":"10.1007/s10825-008-0212-8","title":"NEGF simulations of the effect of strain on scaled double gate nanoMOSFETs","year":2008,"lang":"en","type":"article","venue":"Journal of Computational Electronics","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":10,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Engineering and Physical Sciences Research Council","keywords":"Double gate; MOSFET; Materials science; Transistor; Nanometre; Scaling; Strain (injury); Transverse plane; Effective mass (spring–mass system); Range (aeronautics); Electron; Condensed matter physics; Optoelectronics; Physics; Voltage; Composite material; Quantum mechanics; Geometry","score_opus":0.011196096841469355,"score_gpt":0.24184504365470078,"score_spread":0.23064894681323142,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1497612144","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.959828,0.00042991232,0.004226406,0.0012691586,0.00022537066,0.000029122619,0.0008543699,0.0002294804,0.032908242],"genre_scores_gemma":[0.9965875,0.000092524,0.0009429257,0.00014598983,0.000034806,0.000029996778,0.00023938461,0.00006500236,0.0018618302],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9997954,0.000036036792,0.0000063282414,0.00002352106,0.000062588195,0.00007615287],"domain_scores_gemma":[0.99895287,0.0006227443,0.000075034535,0.000074985815,0.00016426336,0.000110185545],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00038021785,0.0005904951,0.0012051786,0.0005520607,0.00091224944,0.0009241192,0.0015819308,0.0019296409,0.0064051957],"category_scores_gemma":[0.0023391787,0.00047483348,0.0006248888,0.000810363,0.0010400877,0.0009557428,0.00059981336,0.00075602566,0.0003548515],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00022170803,0.00009748397,0.0017817486,0.00011468457,0.00005778825,0.00037748492,0.00008947313,0.98135537,0.0031310378,0.009065507,0.001856235,0.0018514561],"study_design_scores_gemma":[0.00003672146,0.000043157474,0.0006022684,0.000009503349,0.00000939033,0.000021924707,0.000033855827,0.9969524,0.00055802026,0.0014032504,0.00031677305,0.000012735091],"about_ca_topic_score_codex":0.018145323,"about_ca_topic_score_gemma":0.017111259,"teacher_disagreement_score":0.018145323,"about_ca_system_score_codex":0.0016752031,"about_ca_system_score_gemma":0.0009029382,"threshold_uncertainty_score":0.036079407},"labels":[],"label_agreement":null},{"id":"W1506533216","doi":"10.1017/cbo9780511840685.011","title":"MOSFET basics","year":2010,"lang":"en","type":"book-chapter","venue":"Cambridge University Press eBooks","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of British Columbia","funders":"","keywords":"MOSFET; Maturity (psychological); Engineering physics; Materials science; Fabrication; Nanotechnology; Object (grammar); Optoelectronics; Subject (documents); Silicon; Electrical engineering; Computer science; Engineering; Political science; Transistor; Medicine; World Wide Web; Voltage; Law; Artificial intelligence","score_opus":0.019159921816545276,"score_gpt":0.18284660752342496,"score_spread":0.1636866857068797,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1506533216","genre_codex":"other","genre_gemma":"other","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"other","genre_consensus":"other","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.0048614754,0.07195595,0.1127445,0.0041651144,0.0049909353,0.00035909808,0.006799431,0.006041028,0.7880824],"genre_scores_gemma":[0.06582999,0.07443968,0.09478305,0.003573722,0.0018497637,0.0008248111,0.008093907,0.0016259789,0.74897903],"study_design_codex":"theoretical_or_conceptual","study_design_gemma":"not_applicable","domain_scores_codex":[0.9997992,0.000012598276,0.000010551037,0.00004205914,0.0001117782,0.000023791828],"domain_scores_gemma":[0.99988306,0.000025073687,0.0000053985254,0.000019511956,0.000053771324,0.000013177217],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00022008113,0.0006879177,0.00076240615,0.0010502022,0.00085308345,0.0015029265,0.0016185999,0.001411922,0.06794804],"category_scores_gemma":[0.0005968076,0.0004173251,0.0006136809,0.0010490583,0.0005458289,0.0021805938,0.0008670258,0.0013840925,0.050712883],"study_design_candidate":"not_applicable","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00012150447,0.00007361323,0.00017259817,0.0017600111,0.000025263702,0.00043666357,0.000350144,0.0017272668,0.027352344,0.35500318,0.30574226,0.3072352],"study_design_scores_gemma":[0.00000724742,0.000027535178,0.00006800862,0.00010563278,0.0000057723037,0.00056168495,0.000016884618,0.0006660223,0.00348429,0.027819462,0.96722555,0.000011907444],"about_ca_topic_score_codex":0.0008232759,"about_ca_topic_score_gemma":0.0012187985,"teacher_disagreement_score":0.06794804,"about_ca_system_score_codex":0.00091166334,"about_ca_system_score_gemma":0.0006415087,"threshold_uncertainty_score":0.22730887},"labels":[],"label_agreement":null},{"id":"W1510415638","doi":"10.1002/0471221562.ch4","title":"Fundamentals of SOI CMOS Circuits","year":2002,"lang":"oc","type":"other","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Silicon on insulator; CMOS; Electronic circuit; Electronic engineering; Electrical engineering; Engineering; Materials science; Optoelectronics; Silicon","score_opus":0.03046006373214347,"score_gpt":0.2389879663613859,"score_spread":0.20852790262924242,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1510415638","genre_codex":"methods","genre_gemma":"other","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"other","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.0088536,0.043748107,0.46800816,0.0034176882,0.0033388324,0.00052614446,0.0024500424,0.00561153,0.46404597],"genre_scores_gemma":[0.2657724,0.09083088,0.41259298,0.00383467,0.003377549,0.0012705236,0.0041152127,0.0012965885,0.21690911],"study_design_codex":"theoretical_or_conceptual","study_design_gemma":"not_applicable","domain_scores_codex":[0.99957436,0.000026392683,0.000026718746,0.00005832194,0.0002670029,0.000047153724],"domain_scores_gemma":[0.9997644,0.00004670925,0.000018873792,0.000033064698,0.00012494015,0.000012160759],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00022932845,0.0006272472,0.0005079875,0.0009138236,0.0007236014,0.001515145,0.0009121569,0.00088081317,0.020331176],"category_scores_gemma":[0.0006293746,0.00032961305,0.0003457651,0.0010721796,0.0005985949,0.0014808254,0.0005641526,0.0011569347,0.0106127085],"study_design_candidate":"not_applicable","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00008906867,0.00006600194,0.00045051862,0.001497497,0.000033416236,0.0003886346,0.0005526933,0.008796363,0.044522863,0.46724212,0.084505804,0.39185497],"study_design_scores_gemma":[0.000012851807,0.000107791224,0.00023115093,0.00020478174,0.000017020373,0.00075970904,0.00007411768,0.008144381,0.012975831,0.072355546,0.9050828,0.000034091252],"about_ca_topic_score_codex":0.0006318062,"about_ca_topic_score_gemma":0.00078293425,"teacher_disagreement_score":0.020331176,"about_ca_system_score_codex":0.0007214301,"about_ca_system_score_gemma":0.0006559373,"threshold_uncertainty_score":0.06801456},"labels":[],"label_agreement":null},{"id":"W1513408597","doi":"","title":"Tunneling at the Emitter Periphery in Silicon-Germanium HBTs","year":2001,"lang":"en","type":"article","venue":"NPARC","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":false,"route_ca_venue":true,"route_about_ca":false,"ca_institutions":"","funders":"","keywords":"Common emitter; Germanium; Optoelectronics; Quantum tunnelling; Silicon; Silicon-germanium; Materials science; Heterojunction bipolar transistor; Engineering physics; Bipolar junction transistor; Electrical engineering; Transistor; Engineering","score_opus":0.015666727511669646,"score_gpt":0.22507727548410275,"score_spread":0.2094105479724331,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1513408597","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9784349,0.0027996171,0.007072282,0.0002992406,0.00011917518,0.000019866451,0.00011298872,0.00017463007,0.010967145],"genre_scores_gemma":[0.99623007,0.00040210964,0.0009965391,0.00002835672,0.000013547904,0.000003278199,0.00003001712,0.00001537611,0.0022807117],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.999948,0.0000064603705,0.0000026414173,0.000011538667,0.00001550605,0.000015866228],"domain_scores_gemma":[0.99985886,0.000060594717,0.000019024545,0.00001502394,0.0000266911,0.000019778905],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00018103552,0.00014388483,0.00030029955,0.00025897473,0.00039427236,0.0006553493,0.00039880114,0.00036620465,0.0014323258],"category_scores_gemma":[0.000462418,0.00013633969,0.00013161634,0.00015582063,0.0003242661,0.0006677057,0.0003145177,0.00025448448,0.0002663816],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0029579233,0.0002787267,0.010444022,0.0007289826,0.00011991145,0.0031969603,0.0007636864,0.023043163,0.8027001,0.10912861,0.005348188,0.041289695],"study_design_scores_gemma":[0.00030437025,0.0024247116,0.031767745,0.00037689123,0.0005438056,0.0066650487,0.0011406664,0.335372,0.5563406,0.048597824,0.016301278,0.00016508868],"about_ca_topic_score_codex":0.00059879146,"about_ca_topic_score_gemma":0.0010152062,"teacher_disagreement_score":0.0014323258,"about_ca_system_score_codex":0.00032512387,"about_ca_system_score_gemma":0.00023871259,"threshold_uncertainty_score":0.0047916174},"labels":[],"label_agreement":null},{"id":"W1520518807","doi":"10.1002/0471221562.ch2","title":"SOI CMOS Devices–Part I","year":2002,"lang":"en","type":"other","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Snapback; Silicon on insulator; CMOS; Subthreshold conduction; Optoelectronics; Impact ionization; Electrical engineering; Materials science; Velocity overshoot; Leakage (economics); Engineering; Ionization; Electrostatic discharge; Physics; Transistor; Voltage; Ion; Silicon","score_opus":0.020693023183668096,"score_gpt":0.21606687983408215,"score_spread":0.19537385665041407,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1520518807","genre_codex":"other","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.019971084,0.038168553,0.082320906,0.0017259344,0.0034997202,0.00046685745,0.004309776,0.0028349261,0.8467023],"genre_scores_gemma":[0.16530015,0.04963718,0.06167128,0.0024904783,0.0015767553,0.0005208707,0.008714761,0.0009830986,0.7091054],"study_design_codex":"design_other","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.999826,0.0000093494855,0.000007424999,0.000031213644,0.0001090068,0.000017063472],"domain_scores_gemma":[0.99991715,0.000010292417,0.000007777909,0.000019415986,0.00003967208,0.0000056831236],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000099065124,0.00056329294,0.00028204158,0.0005661481,0.00048003517,0.00090651086,0.0004974491,0.00057752396,0.0311878],"category_scores_gemma":[0.00018455248,0.00019394261,0.00028588294,0.00066137844,0.00026726484,0.0006845963,0.00039459424,0.0004806027,0.017910725],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00010417515,0.000110826324,0.00064114726,0.0014860932,0.00003035205,0.00026626323,0.00028487988,0.004973112,0.15310444,0.09918134,0.1893613,0.5504561],"study_design_scores_gemma":[0.000004290483,0.00008559806,0.0005670143,0.00008501353,0.000010160732,0.00042043976,0.000038886974,0.0022665984,0.025874851,0.0062102405,0.96442455,0.000012460924],"about_ca_topic_score_codex":0.00050485926,"about_ca_topic_score_gemma":0.0009028216,"teacher_disagreement_score":0.0311878,"about_ca_system_score_codex":0.0005502866,"about_ca_system_score_gemma":0.00033856882,"threshold_uncertainty_score":0.10433358},"labels":[],"label_agreement":null},{"id":"W1544583355","doi":"","title":"Development of a RF Bipolar Transistor in a Standard 0.35μm CMOS Technology","year":2001,"lang":"en","type":"article","venue":"SIAM International Conference on Data Mining","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Toronto","funders":"","keywords":"CMOS; Bipolar junction transistor; BiCMOS; Transistor; Shallow trench isolation; Trench; Materials science; Electrical engineering; Electronic engineering; Optoelectronics; Engineering; Nanotechnology; Voltage","score_opus":0.09748267735984383,"score_gpt":0.31694853583078314,"score_spread":0.2194658584709393,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1544583355","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.28368378,0.004316749,0.66709995,0.001119133,0.0014303365,0.00088880927,0.0009887075,0.005356187,0.035116326],"genre_scores_gemma":[0.48919985,0.0012030852,0.4961925,0.0002997157,0.00019353481,0.0002760109,0.0004018097,0.00017239925,0.012060962],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9996443,0.000020448659,0.000016159136,0.0000642172,0.00021076582,0.0000440801],"domain_scores_gemma":[0.99972624,0.000035411183,0.000031229494,0.000030054056,0.00013715631,0.00003989596],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00027537413,0.0003416567,0.00038813954,0.0002681618,0.00022796265,0.0005161537,0.0010316506,0.0006910981,0.0013879495],"category_scores_gemma":[0.0005343627,0.00033240902,0.00030567835,0.00022442665,0.00016516447,0.0005554373,0.00030831248,0.00034466473,0.0014422245],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00011974923,0.00006333474,0.00087439583,0.0003103829,0.00003847958,0.00047279106,0.00009845278,0.0020407129,0.94188684,0.0047303843,0.0031160766,0.046248294],"study_design_scores_gemma":[0.00017176724,0.0024974605,0.005686341,0.00016047551,0.00024555973,0.00370267,0.00008026719,0.050437905,0.83988005,0.0020252662,0.09499013,0.00012197674],"about_ca_topic_score_codex":0.0009916566,"about_ca_topic_score_gemma":0.0014032158,"teacher_disagreement_score":0.0013879495,"about_ca_system_score_codex":0.00032851755,"about_ca_system_score_gemma":0.0006218188,"threshold_uncertainty_score":0.004643142},"labels":[],"label_agreement":null},{"id":"W1548321147","doi":"10.1002/9780470318140.ch9","title":"The Use of Silicon Nitride in Semiconductor Devices","year":2008,"lang":"en","type":"book-chapter","venue":"Ceramic engineering and science proceedings","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":5,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Bell (Canada)","funders":"","keywords":"Materials science; Semiconductor; Optoelectronics; Silicon nitride; Silicon; Nitride; Nanotechnology","score_opus":0.03434188896261085,"score_gpt":0.21663921563703506,"score_spread":0.18229732667442422,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1548321147","genre_codex":"other","genre_gemma":"methods","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"methods","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.023326723,0.2506927,0.037602145,0.001096351,0.003659541,0.00010541191,0.00020312963,0.0003006709,0.6830133],"genre_scores_gemma":[0.1235033,0.2639916,0.03571234,0.0010137549,0.0010015096,0.00014578669,0.00049858354,0.00038146245,0.5737516],"study_design_codex":"design_other","study_design_gemma":"not_applicable","domain_scores_codex":[0.99988663,0.0000098414,0.000004785825,0.000023553781,0.000065928754,0.000009263392],"domain_scores_gemma":[0.9999496,0.000025634332,0.0000037880045,0.0000070234923,0.0000110178735,0.0000029810242],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0001737463,0.00054088887,0.00036029748,0.0004047133,0.0004445191,0.00091373443,0.00060129527,0.0004388476,0.00734502],"category_scores_gemma":[0.00016628976,0.00046614837,0.00042365835,0.0006703687,0.00039453385,0.0013606437,0.00055707904,0.0009220827,0.0028859398],"study_design_candidate":"not_applicable","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000086137225,0.000111387504,0.00041922924,0.0025335257,0.000061028444,0.000520638,0.0007547832,0.0041831625,0.20985977,0.26489586,0.037101462,0.47947308],"study_design_scores_gemma":[0.000007419725,0.00009715897,0.00062316295,0.00045912142,0.00003890169,0.0007259895,0.00013364508,0.0024100929,0.066425085,0.019662432,0.90939397,0.000023091565],"about_ca_topic_score_codex":0.00043219293,"about_ca_topic_score_gemma":0.0014700259,"teacher_disagreement_score":0.00734502,"about_ca_system_score_codex":0.00054837106,"about_ca_system_score_gemma":0.00043446588,"threshold_uncertainty_score":0.024571538},"labels":[],"label_agreement":null},{"id":"W1573626805","doi":"","title":"Proceedings of the 23rd symposium on Integrated circuits and system design","year":2010,"lang":"en","type":"article","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":2,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":true,"ca_institutions":"","funders":"","keywords":"Variety (cybernetics); Presentation (obstetrics); Cover (algebra); Integrated circuit; Computer science; Publication; Integrated circuit design; Circuit design; Telecommunications; Engineering; Electrical engineering; Political science","score_opus":0.012054642641066449,"score_gpt":0.19703727687974265,"score_spread":0.1849826342386762,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1573626805","genre_codex":"other","genre_gemma":"other","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"other","genre_consensus":"other","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.006535286,0.12988418,0.31203595,0.0095892325,0.072393216,0.0007574188,0.0020439448,0.004973415,0.46178737],"genre_scores_gemma":[0.052651748,0.07359941,0.15161818,0.0044433083,0.007831182,0.0006689004,0.005632698,0.0013749173,0.7021796],"study_design_codex":"not_applicable","study_design_gemma":"not_applicable","domain_scores_codex":[0.99866176,0.00020713973,0.000093179464,0.00013584453,0.0007896918,0.000112430185],"domain_scores_gemma":[0.99895394,0.00015608162,0.000032057906,0.00018483431,0.00057094736,0.00010214697],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0013295196,0.0013575578,0.0012445215,0.001044382,0.00059446064,0.003579937,0.0014046683,0.0015540444,0.06801884],"category_scores_gemma":[0.002114372,0.0005269721,0.0010674273,0.00078883505,0.0006779859,0.0015638071,0.0009856884,0.0026256044,0.039880548],"study_design_candidate":"not_applicable","study_design_consensus":"not_applicable","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00019715435,0.00013719566,0.0006676198,0.0005199676,0.00015843213,0.00030579095,0.00011849913,0.002975936,0.011802826,0.029915992,0.50457567,0.4486249],"study_design_scores_gemma":[0.000015278092,0.00009078377,0.00027751795,0.00009435897,0.000035856287,0.00027400316,0.00002391648,0.0031325736,0.0025148767,0.00603712,0.9874865,0.00001729898],"about_ca_topic_score_codex":0.0015262717,"about_ca_topic_score_gemma":0.0034700935,"teacher_disagreement_score":0.06801884,"about_ca_system_score_codex":0.001018092,"about_ca_system_score_gemma":0.0015132099,"threshold_uncertainty_score":0.22754568},"labels":[],"label_agreement":null},{"id":"W1579761075","doi":"10.1109/iscas.1994.409260","title":"Floating gate charge-sharing: a novel circuit for analog trimming","year":2002,"lang":"en","type":"article","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":14,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Carleton University","funders":"Natural Sciences and Engineering Research Council of Canada; CMC Microsystems","keywords":"Trimming; Charge sharing; Comparator; Offset (computer science); CMOS; Electronic circuit; Computer science; Electrical engineering; Subthreshold conduction; Voltage; Electronic engineering; Analogue electronics; Engineering; Transistor","score_opus":0.08960607249284518,"score_gpt":0.24450904869253182,"score_spread":0.15490297619968663,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1579761075","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.088099904,0.0029494986,0.8781493,0.00074726215,0.0008347859,0.00019016942,0.000356114,0.0044760155,0.024196886],"genre_scores_gemma":[0.82246786,0.0010216744,0.16206637,0.00094132184,0.0004382102,0.00011005393,0.00021850671,0.00016024883,0.0125758145],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9997931,0.0000146564425,0.00001024112,0.00004779455,0.00010719196,0.000027085269],"domain_scores_gemma":[0.99980944,0.000037629827,0.000029576184,0.000041502382,0.000063482505,0.000018407456],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00015926672,0.0004000844,0.00024922754,0.00040035945,0.00043805415,0.0006311198,0.0018390573,0.0008001362,0.0042646914],"category_scores_gemma":[0.00042260418,0.00014427774,0.0002454736,0.00043071064,0.00037885146,0.0010930268,0.00061830995,0.0004640385,0.0007321959],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00034657045,0.00009628687,0.00027833314,0.00025560852,0.00004319851,0.0008003299,0.00018780277,0.0083180955,0.6725423,0.030411622,0.0077261035,0.2789937],"study_design_scores_gemma":[0.00011564338,0.0010635128,0.00079573627,0.00008166831,0.00013201196,0.0040341783,0.000056484758,0.19141918,0.6946811,0.01846112,0.08904941,0.00011000452],"about_ca_topic_score_codex":0.00053700147,"about_ca_topic_score_gemma":0.00076500274,"teacher_disagreement_score":0.0042646914,"about_ca_system_score_codex":0.00044862917,"about_ca_system_score_gemma":0.0003792611,"threshold_uncertainty_score":0.014266789},"labels":[],"label_agreement":null},{"id":"W1585219920","doi":"","title":"RF circuit implications of a low&#8211;current linearity \"Sweet spot\" in MOSFETs","year":2002,"lang":"en","type":"article","venue":"European Solid-State Circuits Conference","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":2,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Carleton University","funders":"","keywords":"MOSFET; Linearity; Sweet spot; Transistor; Electrical engineering; Materials science; Inversion (geology); Optoelectronics; Engineering; Voltage; Geology","score_opus":0.06724102754942023,"score_gpt":0.26797570504640095,"score_spread":0.2007346774969807,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1585219920","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.82382184,0.0015428807,0.12657323,0.0043803463,0.00014762642,0.0000545605,0.00022860398,0.0019257503,0.04132519],"genre_scores_gemma":[0.99252105,0.00012506083,0.004539875,0.00025862787,0.000040413906,0.000011615718,0.000027081789,0.000048710554,0.0024275356],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99968517,0.000057894307,0.000013278698,0.000056832603,0.00011933075,0.000067641806],"domain_scores_gemma":[0.9988018,0.0007924357,0.00010953778,0.00010268106,0.00014459663,0.000048986458],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0005342621,0.00021364704,0.0002981645,0.0002836369,0.00039748225,0.0007567731,0.00074718165,0.0007984225,0.003446225],"category_scores_gemma":[0.0022369705,0.00023747786,0.00017710244,0.00022807006,0.0009369919,0.0012482128,0.0006119836,0.0007103921,0.00083758193],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0007650282,0.00007125621,0.0028060398,0.00024577053,0.000038394526,0.0010958235,0.0004750374,0.017590584,0.8664265,0.07127814,0.0013836313,0.03782378],"study_design_scores_gemma":[0.00009616169,0.0022429198,0.007703059,0.000083269515,0.00013718705,0.0052712546,0.00032347086,0.15004724,0.74638695,0.07605965,0.0115415165,0.00010730579],"about_ca_topic_score_codex":0.00030565183,"about_ca_topic_score_gemma":0.0005177122,"teacher_disagreement_score":0.003446225,"about_ca_system_score_codex":0.0004382164,"about_ca_system_score_gemma":0.00017086626,"threshold_uncertainty_score":0.01152873},"labels":[],"label_agreement":null},{"id":"W1590842594","doi":"10.1109/iedm.2002.1175825","title":"FinFET scaling to 10 nm gate length","year":2003,"lang":"en","type":"article","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":595,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Advanced Micro Devices (Canada)","funders":"","keywords":"Transconductance; Materials science; CMOS; MOSFET; Optoelectronics; Planar; Short-channel effect; Fabrication; Transistor; Channel (broadcasting); Design for manufacturability; Logic gate; Scaling; Electrical engineering; Computer science; Engineering","score_opus":0.01498320094866617,"score_gpt":0.22249533377739364,"score_spread":0.20751213282872746,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1590842594","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.83776104,0.008709416,0.07227713,0.0025835251,0.0013600542,0.00013913718,0.001327291,0.0036311648,0.07221131],"genre_scores_gemma":[0.9270452,0.0033806232,0.046723172,0.00067886576,0.00013910438,0.000096135045,0.00086501375,0.00010397057,0.02096781],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99992,0.0000031116394,0.0000069479247,0.000026862604,0.000028537472,0.0000146193115],"domain_scores_gemma":[0.9997794,0.00006300641,0.00003444557,0.000025888896,0.00007640022,0.00002088584],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00009037979,0.0003109717,0.00020085875,0.00012004246,0.00014684236,0.00030801224,0.00063669647,0.0006002706,0.0029782646],"category_scores_gemma":[0.0006311977,0.00013924597,0.0002170865,0.0001431191,0.00016650252,0.00082701223,0.0003217103,0.00043915396,0.0011881212],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0001354495,0.00010800336,0.004200967,0.00045226328,0.000042270043,0.0009098538,0.00017781288,0.0044452627,0.8971248,0.010000812,0.0063051055,0.07609732],"study_design_scores_gemma":[0.00010015572,0.001561914,0.014963209,0.00027062866,0.00017241391,0.005009403,0.00024486013,0.08137387,0.7621184,0.0131506035,0.12093635,0.00009832031],"about_ca_topic_score_codex":0.0010858171,"about_ca_topic_score_gemma":0.0021970535,"teacher_disagreement_score":0.0029782646,"about_ca_system_score_codex":0.000328615,"about_ca_system_score_gemma":0.0002714156,"threshold_uncertainty_score":0.009963274},"labels":[],"label_agreement":null},{"id":"W1604467178","doi":"10.4271/2006-01-0592","title":"Extended Qualification of Power MOSFET to Fulfill Today's Requirements of Automotive Applications","year":2006,"lang":"en","type":"article","venue":"SAE technical papers on CD-ROM/SAE technical paper series","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":2,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Infineon Technologies (Canada)","funders":"","keywords":"Automotive industry; MOSFET; Power MOSFET; Power (physics); Computer science; Automotive engineering; Automotive electronics; Electrical engineering; Power semiconductor device; Reliability engineering; Engineering; Transistor; Voltage; Physics","score_opus":0.015488069234636217,"score_gpt":0.2669076156725044,"score_spread":0.2514195464378682,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1604467178","genre_codex":"empirical","genre_gemma":"methods","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"methods","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.7994029,0.0021421516,0.16870327,0.0008312128,0.000520278,0.00029960697,0.00047168657,0.0016789048,0.02594998],"genre_scores_gemma":[0.9804494,0.00023673677,0.0116570555,0.0001931174,0.00006657755,0.000056981404,0.00025515337,0.00008746264,0.0069975057],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99936205,0.00009184076,0.00003956186,0.00006376244,0.00034131546,0.000101426725],"domain_scores_gemma":[0.99860126,0.00031007122,0.00010013065,0.00023675023,0.0006938054,0.000058045367],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00064792787,0.00033340303,0.00048489365,0.00023360334,0.00029121232,0.00036477036,0.00040725002,0.0007055525,0.003994129],"category_scores_gemma":[0.0018352747,0.00010738367,0.00024869843,0.00017859269,0.00028341578,0.0005940741,0.0003079142,0.00035023253,0.0011204088],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00037951427,0.000105186096,0.003624623,0.00023108553,0.000018721403,0.0007906586,0.00037517794,0.0086752055,0.90404195,0.0040851566,0.0053996523,0.07227296],"study_design_scores_gemma":[0.00015452201,0.0048454804,0.035973724,0.00017153229,0.00006790237,0.003043195,0.00043003887,0.0825126,0.7824391,0.007462739,0.082786955,0.00011217202],"about_ca_topic_score_codex":0.0008466517,"about_ca_topic_score_gemma":0.0013363342,"teacher_disagreement_score":0.003994129,"about_ca_system_score_codex":0.0003214062,"about_ca_system_score_gemma":0.0004853621,"threshold_uncertainty_score":0.013361692},"labels":[],"label_agreement":null},{"id":"W1626485750","doi":"10.1109/ispsd.1999.764120","title":"High voltage high frequency silicon bipolar transistors","year":2003,"lang":"en","type":"article","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Toronto","funders":"","keywords":"Bipolar junction transistor; Silicon; Materials science; Optoelectronics; Guard (computer science); Electrical engineering; Voltage; Breakdown voltage; High voltage; Transistor; Base (topology); Radio frequency; Electronic engineering; Computer science; Engineering","score_opus":0.010959323644802338,"score_gpt":0.20076986986127104,"score_spread":0.1898105462164687,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1626485750","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.4701384,0.018422501,0.42176318,0.0019158943,0.0017820918,0.0001369095,0.00043532884,0.0028875105,0.08251813],"genre_scores_gemma":[0.91001326,0.0033325201,0.0689011,0.00043258982,0.00058468035,0.000032494896,0.00018396448,0.000070625145,0.016448677],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998524,0.000011969465,0.000004600254,0.000027382759,0.00008085391,0.000022772965],"domain_scores_gemma":[0.99986684,0.00003228857,0.000030033238,0.000014346535,0.000036323243,0.000020099698],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00011000688,0.00017148697,0.00015127053,0.00014814087,0.00022202183,0.00045683316,0.0005258557,0.00048748916,0.0027712425],"category_scores_gemma":[0.00019076733,0.000099593555,0.00015462057,0.00021094458,0.0002294004,0.0004116236,0.00024245027,0.00034623808,0.0009733049],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000093424795,0.000017895643,0.00035682908,0.00016769201,0.000015840607,0.00026181398,0.00005915385,0.0006123696,0.9211579,0.010211955,0.00151835,0.065526865],"study_design_scores_gemma":[0.000103614126,0.0018329247,0.005578221,0.00006502616,0.000108473236,0.0046060523,0.00008983062,0.01841093,0.8017608,0.009876738,0.15752372,0.000043740383],"about_ca_topic_score_codex":0.00012309091,"about_ca_topic_score_gemma":0.00031786284,"teacher_disagreement_score":0.0027712425,"about_ca_system_score_codex":0.00021373364,"about_ca_system_score_gemma":0.00011990461,"threshold_uncertainty_score":0.009270668},"labels":[],"label_agreement":null},{"id":"W1630830202","doi":"10.1063/1.1584925","title":"Instability of the Noise Level in Polymer Field-Effect Transistors with Non-Stationary Electrical Characteristics","year":2003,"lang":"en","type":"article","venue":"AIP conference proceedings","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":3,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McMaster University; Simon Fraser University","funders":"Simon Fraser University; McMaster University","keywords":"Materials science; Noise (video); Polymer; Leakage (economics); Charge carrier; Transistor; Condensed matter physics; Electrode; Electron mobility; Optoelectronics; Chemical physics; Voltage; Electrical engineering; Chemistry; Composite material; Physics; Computer science","score_opus":0.016928570936934118,"score_gpt":0.22170312870072362,"score_spread":0.2047745577637895,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1630830202","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9893161,0.00033921137,0.00920205,0.000045840075,0.000007949349,0.0000058672263,0.000028853514,0.000081668826,0.00097244745],"genre_scores_gemma":[0.9990227,0.000054398337,0.00060362957,0.0000068412746,0.000006256587,0.0000048449256,0.000026260323,0.000009219454,0.00026581218],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9997527,0.0000446891,0.0000100561365,0.000056625333,0.000106027604,0.000029946845],"domain_scores_gemma":[0.9987325,0.0008110342,0.00020200225,0.00006601545,0.00013282015,0.00005558528],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00029694856,0.00019693606,0.00024044242,0.00047203118,0.00018807608,0.00030309966,0.00024356236,0.00043651537,0.00053734554],"category_scores_gemma":[0.002136638,0.00011237943,0.00014197489,0.0002190927,0.00049304985,0.00044677185,0.00016570206,0.00025373825,0.00016046425],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00087556697,0.00007445762,0.010730475,0.000095541676,0.000027905742,0.0008041228,0.0004967988,0.007630971,0.96077496,0.0020701943,0.00012548982,0.016293358],"study_design_scores_gemma":[0.00006294245,0.0014898933,0.051542636,0.00004583359,0.000068817564,0.0021809326,0.00016253015,0.20092233,0.7364434,0.005718904,0.001296584,0.00006522391],"about_ca_topic_score_codex":0.00019559654,"about_ca_topic_score_gemma":0.00014513338,"teacher_disagreement_score":0.00053734554,"about_ca_system_score_codex":0.00030118524,"about_ca_system_score_gemma":0.00006933374,"threshold_uncertainty_score":0.0021852255},"labels":[],"label_agreement":null},{"id":"W1688817427","doi":"10.1109/drc.2001.937877","title":"An extension of McKelvey's one-flux method to energy space","year":2002,"lang":"en","type":"article","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"National Research Council Canada","funders":"","keywords":"Extension (predicate logic); Flux (metallurgy); Space (punctuation); Boltzmann equation; Diffusion; Physics; Momentum (technical analysis); Boltzmann constant; Statistical physics; Energy (signal processing); Classical mechanics; Applied mathematics; Computer science; Mathematics; Quantum mechanics; Materials science","score_opus":0.03802838496539027,"score_gpt":0.27144262447201173,"score_spread":0.23341423950662146,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1688817427","genre_codex":"methods","genre_gemma":"methods","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"methods","genre_consensus":"methods","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.0026987835,0.0007695535,0.983205,0.0003923671,0.00037018477,0.00006018378,0.000054521264,0.00009333757,0.01235612],"genre_scores_gemma":[0.13933687,0.0031861765,0.8223044,0.00082103483,0.000747328,0.00039640281,0.00016402095,0.0005185671,0.032525193],"study_design_codex":"theoretical_or_conceptual","study_design_gemma":"theoretical_or_conceptual","domain_scores_codex":[0.9993274,0.00020586295,0.000031584983,0.00013786415,0.00023628563,0.00006107175],"domain_scores_gemma":[0.99917597,0.00039293943,0.000049944378,0.00012946817,0.00019423857,0.000057438716],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0016242748,0.000906846,0.0010502692,0.0013796549,0.0011693643,0.0013645653,0.0022924598,0.001647238,0.005929495],"category_scores_gemma":[0.0034971165,0.00037689542,0.0013691722,0.00095585163,0.001581147,0.0039224955,0.002161174,0.002123259,0.0017606466],"study_design_candidate":"theoretical_or_conceptual","study_design_consensus":"theoretical_or_conceptual","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000039715287,0.00005656935,0.00027923178,0.00018602441,0.000023774819,0.00019326479,0.00024456202,0.024066968,0.0036122992,0.895893,0.0031974919,0.07220702],"study_design_scores_gemma":[0.000025326923,0.00006678116,0.00024411555,0.000090096415,0.000019188452,0.0003249845,0.00004602342,0.2751975,0.0028579482,0.6673724,0.053684767,0.00007091523],"about_ca_topic_score_codex":0.0015325593,"about_ca_topic_score_gemma":0.0011685787,"teacher_disagreement_score":0.005929495,"about_ca_system_score_codex":0.0006604251,"about_ca_system_score_gemma":0.00089716027,"threshold_uncertainty_score":0.019836128},"labels":[],"label_agreement":null},{"id":"W1766448249","doi":"10.1063/1.2730090","title":"Scanning Gate Imaging of Transport within an InGaAs QPC","year":2007,"lang":"en","type":"article","venue":"AIP conference proceedings","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":3,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McGill University","funders":"","keywords":"Quantum point contact; Scanning gate microscopy; Conductance; Gallium arsenide; Physics; Quantum; Interference (communication); Gaussian; Condensed matter physics; Optoelectronics; Materials science; Quantum well; Optics; Scanning electron microscope; Quantum mechanics; Computer science; Telecommunications","score_opus":0.0257911642027428,"score_gpt":0.2564846848679991,"score_spread":0.23069352066525628,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1766448249","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9981375,0.000033776545,0.0011204378,0.000018474286,0.0000017361714,0.000003327619,0.00004431869,0.00004700989,0.00059336727],"genre_scores_gemma":[0.9967925,0.000039839135,0.002290521,0.000008311123,0.0000021346154,0.000004562714,0.000030949588,0.000008562876,0.0008225113],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999528,0.0000028319844,0.0000012547226,0.00001046922,0.000021410002,0.000011106188],"domain_scores_gemma":[0.99989295,0.000031698662,0.00001789851,0.000014565504,0.000021559044,0.00002129741],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00004891097,0.000112002854,0.00011745572,0.00020128053,0.00020348768,0.00028532717,0.00029132952,0.00024460637,0.00070039433],"category_scores_gemma":[0.00013965725,0.00008352702,0.00005792101,0.00017713876,0.0002724776,0.00022961243,0.0001497083,0.00020253303,0.00010013674],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0000381031,0.000012082556,0.00018684914,0.000009638181,0.000001093643,0.00007672369,0.000029147062,0.00027282175,0.99773467,0.00045685362,0.000037997972,0.0011441039],"study_design_scores_gemma":[0.000013169151,0.00013899483,0.0063850763,0.000004341027,0.000005020412,0.00015135852,0.000052053023,0.0312438,0.9609492,0.00024591706,0.0007994277,0.000011560163],"about_ca_topic_score_codex":0.0034567579,"about_ca_topic_score_gemma":0.0031468887,"teacher_disagreement_score":0.0034567579,"about_ca_system_score_codex":0.00066727254,"about_ca_system_score_gemma":0.00027127741,"threshold_uncertainty_score":0.0068733096},"labels":[],"label_agreement":null},{"id":"W1778573787","doi":"","title":"High performance 32nm SOI CMOS with high-k/metal gate and 0.149µm 2 SRAM and ultra low-k back end with eleven levels of copper","year":2006,"lang":"en","type":"article","venue":"Symposium on VLSI Technology","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":40,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Advanced Micro Devices (Canada)","funders":"","keywords":"Silicon on insulator; Metal gate; Materials science; Static random-access memory; CMOS; Capacitance; Optoelectronics; Electrical engineering; Silicon; Transistor; Gate oxide; Electrode; Engineering; Physics; Voltage","score_opus":0.005307331418544872,"score_gpt":0.18189761941959345,"score_spread":0.1765902880010486,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1778573787","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.97371113,0.00075952144,0.011409447,0.00021490897,0.00006948202,0.000062438674,0.00043570186,0.00081945903,0.012517925],"genre_scores_gemma":[0.9798356,0.00019847677,0.01573872,0.000038103175,0.000021586888,0.000028861527,0.0003512548,0.000025885078,0.003761526],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998921,0.000007032337,0.0000056584936,0.00001990263,0.000044192777,0.00003106603],"domain_scores_gemma":[0.9998915,0.000011215849,0.000028885876,0.00002391576,0.00002873887,0.000015781685],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00011129231,0.00027991887,0.00019588601,0.0001768129,0.00020618466,0.00030039833,0.00040612533,0.00018870496,0.0014775601],"category_scores_gemma":[0.00015282836,0.00015808552,0.00011147606,0.00018652502,0.00016523867,0.00043990123,0.0003042496,0.00013230224,0.00045721175],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0003390641,0.00005122887,0.003279467,0.00016863381,0.00003342567,0.00052964926,0.00015408205,0.0020665063,0.964968,0.0023574396,0.0023710039,0.02368139],"study_design_scores_gemma":[0.00014694718,0.0037271748,0.023069367,0.000046926172,0.00012179212,0.003010361,0.0002761365,0.021572325,0.8679971,0.002390801,0.07754265,0.0000984351],"about_ca_topic_score_codex":0.00063113036,"about_ca_topic_score_gemma":0.0024014055,"teacher_disagreement_score":0.0014775601,"about_ca_system_score_codex":0.00026848822,"about_ca_system_score_gemma":0.0002546262,"threshold_uncertainty_score":0.0049429536},"labels":[],"label_agreement":null},{"id":"W178686593","doi":"","title":"Four Terminal Gallium Nitride MOSFETs.","year":2011,"lang":"en","type":"article","venue":"NCSU Libraries Repository (North Carolina State University Libraries)","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"","funders":"University of Alberta","keywords":"Terminal (telecommunication); Materials science; Computer science; Telecommunications","score_opus":0.019411324761023852,"score_gpt":0.16073520197150573,"score_spread":0.14132387721048187,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W178686593","genre_codex":"other","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.3778736,0.06457239,0.14664318,0.008951224,0.0102684535,0.00042350023,0.0043958616,0.004421949,0.3824498],"genre_scores_gemma":[0.73521066,0.014776821,0.056872815,0.0011452431,0.00029005492,0.00019147228,0.0019035197,0.00023932235,0.18937019],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998654,0.000009545471,0.0000044363396,0.000021110607,0.000077112396,0.00002237188],"domain_scores_gemma":[0.9999014,0.000015604566,0.0000077520535,0.000014332153,0.00003603065,0.000024930536],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00015828687,0.00030203926,0.00040173353,0.000303141,0.000467928,0.00053730427,0.00081734493,0.00069422077,0.007730632],"category_scores_gemma":[0.00024316584,0.00018616683,0.0003477978,0.00026136395,0.0002892447,0.0007753012,0.000562475,0.00055146567,0.002749465],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0009919436,0.000116547555,0.001066886,0.0007648504,0.00007571074,0.00079341483,0.0003054357,0.0027795415,0.61384284,0.08044289,0.090284504,0.20853543],"study_design_scores_gemma":[0.00022830849,0.0009588704,0.004866398,0.00023331081,0.00022954703,0.0029993276,0.0002392729,0.052212812,0.4252375,0.050689097,0.4619416,0.00016400685],"about_ca_topic_score_codex":0.0009319729,"about_ca_topic_score_gemma":0.0033401134,"teacher_disagreement_score":0.007730632,"about_ca_system_score_codex":0.000567581,"about_ca_system_score_gemma":0.000288116,"threshold_uncertainty_score":0.025861561},"labels":[],"label_agreement":null},{"id":"W1797256294","doi":"10.1109/mse.1999.787012","title":"Supporting Canadian University interests in microelectronics and microsystems","year":2003,"lang":"en","type":"article","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":2,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":true,"ca_institutions":"Queen's University","funders":"Natural Sciences and Engineering Research Council of Canada; CMC Microsystems","keywords":"Microelectronics; Microsystem; Engineering; Fabrication; CMOS; Manufacturing engineering; Systems engineering; Engineering management; Computer science; Electrical engineering; Nanotechnology; Materials science","score_opus":0.007199995917288828,"score_gpt":0.20831171579549695,"score_spread":0.20111171987820814,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1797256294","genre_codex":"other","genre_gemma":"other","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"other","genre_consensus":"other","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.008773346,0.00600112,0.004593318,0.11488843,0.006460157,0.00031974196,0.005368939,0.00097599666,0.85261893],"genre_scores_gemma":[0.06272051,0.0048867394,0.005843047,0.007793029,0.0007525541,0.00010017771,0.0023601775,0.00017856156,0.9153651],"study_design_codex":"not_applicable","study_design_gemma":"not_applicable","domain_scores_codex":[0.9928209,0.00029858097,0.00014087968,0.00039096802,0.0040083164,0.0023404118],"domain_scores_gemma":[0.9627185,0.0011374023,0.0005551485,0.00078874145,0.019981718,0.014818494],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0045502633,0.00086547615,0.00075523864,0.0028701676,0.010020257,0.005626374,0.001799949,0.0035365215,0.19553992],"category_scores_gemma":[0.010109099,0.0004990596,0.00070502213,0.0038369189,0.0014630641,0.002178077,0.0034725303,0.0022380233,0.029635683],"study_design_candidate":"not_applicable","study_design_consensus":"not_applicable","about_ca_topic_candidate":true,"about_ca_topic_consensus":false,"about_ca_system_candidate":true,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000090296475,0.000048286518,0.0020074241,0.00018344012,0.000012737785,0.0002657332,0.00064794195,0.00021622734,0.002057889,0.057072777,0.8562939,0.08110324],"study_design_scores_gemma":[0.00001625222,0.000020555237,0.0027950562,0.00007971735,0.000009331806,0.00020811096,0.00043127785,0.00043570314,0.00067690504,0.0015319502,0.9937728,0.000022351109],"about_ca_topic_score_codex":0.8440779,"about_ca_topic_score_gemma":0.93564487,"teacher_disagreement_score":0.9665839,"about_ca_system_score_codex":0.03341608,"about_ca_system_score_gemma":0.20852897,"threshold_uncertainty_score":0.6541462},"labels":[],"label_agreement":null},{"id":"W17979796","doi":"10.1007/978-1-4614-0481-1_7","title":"Smart Power Technology and Power Semiconductor Devices","year":2011,"lang":"en","type":"book-chapter","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":5,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Crosslight Software (Canada)","funders":"","keywords":"Power (physics); Smart power; Electrical engineering; Semiconductor; Power semiconductor device; Semiconductor device; Computer science; Engineering; Materials science; Physics; Nanotechnology; Voltage","score_opus":0.018696606076737267,"score_gpt":0.21024976975907847,"score_spread":0.1915531636823412,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W17979796","genre_codex":"other","genre_gemma":"other","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"other","genre_consensus":"other","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.0018762235,0.07081456,0.052542653,0.0024562092,0.0038015833,0.00006574015,0.00012914429,0.0004170284,0.8678968],"genre_scores_gemma":[0.016598925,0.053972706,0.01415372,0.0013104714,0.00094537373,0.00008679979,0.00018652022,0.00024836502,0.9124971],"study_design_codex":"theoretical_or_conceptual","study_design_gemma":"not_applicable","domain_scores_codex":[0.9998473,0.000012036897,0.000004839786,0.000024924075,0.000098928096,0.000011948966],"domain_scores_gemma":[0.99991906,0.000034934546,0.00000393508,0.000013991534,0.000023082575,0.00000492981],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00012662796,0.00079776277,0.0005563937,0.0007606514,0.00052678754,0.0015376366,0.00068377826,0.0008732724,0.025772758],"category_scores_gemma":[0.0003034426,0.00037891738,0.0002945516,0.0011580945,0.0008156582,0.0025102058,0.00070433115,0.0019097341,0.0113199325],"study_design_candidate":"not_applicable","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000017813785,0.0000493771,0.000052732958,0.00052498403,0.000009713547,0.00009599013,0.0002454671,0.001563626,0.0052302284,0.45799994,0.18918924,0.34502092],"study_design_scores_gemma":[0.0000031155914,0.000014266892,0.00008304865,0.000120558485,0.0000050962913,0.000175242,0.000035615307,0.0010654089,0.0013797147,0.07528012,0.92183113,0.000006631368],"about_ca_topic_score_codex":0.0003247908,"about_ca_topic_score_gemma":0.0011130346,"teacher_disagreement_score":0.025772758,"about_ca_system_score_codex":0.00063912803,"about_ca_system_score_gemma":0.0004979178,"threshold_uncertainty_score":0.08621842},"labels":[],"label_agreement":null},{"id":"W1831310242","doi":"10.1109/vlsit.1994.324397","title":"Novel deep sub-quarter micron PMOSFETs with ultra-shallow junctions utilizing boron diffusion from poly-Si/oxide(BDSOX)","year":2002,"lang":"en","type":"article","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":2,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":true,"ca_institutions":"","funders":"","keywords":"Boron; Materials science; Fabrication; Silicon; Optoelectronics; Diffusion; CMOS; Oxide; Quarter (Canadian coin); Nanotechnology; Chemistry; Metallurgy; Physics","score_opus":0.017249486424188477,"score_gpt":0.19521701622111196,"score_spread":0.17796752979692348,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1831310242","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.94677603,0.0016016264,0.045826487,0.00014332296,0.0000968727,0.00005454617,0.00032384874,0.0004015155,0.004775915],"genre_scores_gemma":[0.9393669,0.0006721548,0.055119384,0.0000766756,0.000020349979,0.0000420965,0.00025422132,0.000023035256,0.0044251406],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999558,0.0000029627674,0.000002800489,0.000010090701,0.000020169118,0.000008238202],"domain_scores_gemma":[0.9999269,0.000010660413,0.000024857882,0.000007982651,0.000017860444,0.000011600762],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000071581766,0.00016797933,0.00016068855,0.000073400355,0.00013089032,0.00023014941,0.00028997252,0.00021562495,0.00048051288],"category_scores_gemma":[0.00008634299,0.00014312673,0.00011203104,0.000082151506,0.00016475991,0.00040524142,0.00023345281,0.00018140374,0.00020639473],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00002805459,0.0000057594016,0.00018993524,0.000034791487,0.0000028915604,0.0000562558,0.000021202117,0.00014762407,0.9959602,0.00036568823,0.000111911526,0.0030757263],"study_design_scores_gemma":[0.00003480549,0.0005760297,0.003562556,0.000007345712,0.000027784125,0.00082258746,0.000033958328,0.0052392785,0.9812067,0.00035541895,0.008120641,0.000012831214],"about_ca_topic_score_codex":0.00023895488,"about_ca_topic_score_gemma":0.0007688803,"teacher_disagreement_score":0.00048051288,"about_ca_system_score_codex":0.00013993091,"about_ca_system_score_gemma":0.00012769621,"threshold_uncertainty_score":0.0016074181},"labels":[],"label_agreement":null},{"id":"W1836136888","doi":"10.1109/ispsd.1991.146061","title":"High voltage silicon-on-insulator (SOI) MOSFETs","year":2002,"lang":"en","type":"article","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":18,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Toronto","funders":"","keywords":"Silicon on insulator; MOSFET; Materials science; CMOS; Fabrication; Voltage; Silicon; Optoelectronics; High voltage; Electrical engineering; Breakdown voltage; Electronic engineering; Transient (computer programming); Blocking (statistics); Computer science; Engineering; Transistor","score_opus":0.019080819952598964,"score_gpt":0.20482758429045703,"score_spread":0.18574676433785806,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1836136888","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.87803924,0.0047786874,0.060655635,0.0008223911,0.00044443863,0.000096962045,0.00088307715,0.0009504478,0.053329207],"genre_scores_gemma":[0.9697789,0.0014350666,0.018834677,0.000112273796,0.0000947013,0.00005567855,0.00037729007,0.000031899126,0.009279537],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999143,0.000005225986,0.0000039922857,0.000014061775,0.000044627963,0.000017875964],"domain_scores_gemma":[0.99992216,0.000014526616,0.000019292525,0.0000088878805,0.000021316508,0.000013732894],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00009369889,0.00016853059,0.0001759347,0.00012501344,0.0001963069,0.0004383948,0.000286716,0.00022653933,0.0016448356],"category_scores_gemma":[0.0001202175,0.000082351595,0.0001444169,0.00018646705,0.00023280465,0.0004704155,0.00022753725,0.00020500846,0.0004896375],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00009327545,0.000042528023,0.0008064827,0.00021798209,0.000016877402,0.00022323865,0.00009540622,0.0011158325,0.9568324,0.016117614,0.0019739599,0.022464361],"study_design_scores_gemma":[0.00009171951,0.0016321505,0.009217127,0.00006312976,0.00011115178,0.0028983455,0.00024387028,0.027877478,0.806894,0.011388581,0.13951655,0.00006583365],"about_ca_topic_score_codex":0.00016192008,"about_ca_topic_score_gemma":0.00071398314,"teacher_disagreement_score":0.0016448356,"about_ca_system_score_codex":0.00022850515,"about_ca_system_score_gemma":0.0001472466,"threshold_uncertainty_score":0.0055025816},"labels":[],"label_agreement":null},{"id":"W1869548259","doi":"10.1109/iciprm.1992.235577","title":"Analysis of InP/InGaAs single and double heterostructure bipolar transistors for simultaneous high speed and high breakdown operation","year":2003,"lang":"en","type":"article","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":2,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Bell (Canada)","funders":"","keywords":"Heterojunction bipolar transistor; Bipolar junction transistor; Heterojunction; Optoelectronics; Materials science; Transistor; Monte Carlo method; Diffusion; Electrical engineering; Physics; Engineering; Mathematics; Voltage","score_opus":0.012735899284195613,"score_gpt":0.2169644096272726,"score_spread":0.20422851034307699,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1869548259","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9553906,0.00072876154,0.040219814,0.00010334765,0.000023602102,0.000018369736,0.00017267084,0.0002444006,0.0030985735],"genre_scores_gemma":[0.99400866,0.0001896043,0.0042730253,0.000009253357,0.0000063568173,0.0000074916397,0.00009161978,0.00002471811,0.0013892388],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99994123,0.0000050924596,0.0000020664518,0.000008015309,0.000034721383,0.000008948283],"domain_scores_gemma":[0.99988854,0.000047432295,0.000018052731,0.000008452371,0.000028399418,0.000009248543],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00010041222,0.00024744865,0.00018118817,0.00031400778,0.00016791128,0.00032092916,0.0001949499,0.00019433226,0.0009396251],"category_scores_gemma":[0.00023126685,0.00010493611,0.00018674339,0.00018537274,0.000106325606,0.00018451853,0.00007703826,0.00010894594,0.00011439956],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00024030342,0.00006836209,0.0029373865,0.00018903227,0.00006558375,0.00050886016,0.00013865714,0.09611028,0.86755204,0.0045076986,0.0010606416,0.02662111],"study_design_scores_gemma":[0.000016798142,0.00031084346,0.0083865095,0.000010202978,0.000045296714,0.0005525895,0.00005049706,0.7864401,0.19999857,0.0020169625,0.0021570546,0.000014591973],"about_ca_topic_score_codex":0.0011406841,"about_ca_topic_score_gemma":0.0015896586,"teacher_disagreement_score":0.0011406841,"about_ca_system_score_codex":0.000329196,"about_ca_system_score_gemma":0.00017638234,"threshold_uncertainty_score":0.0031434298},"labels":[],"label_agreement":null},{"id":"W1901792139","doi":"10.1109/isscs.2005.1511256","title":"Analog and mixed-mode design using sub-micron technologies","year":2006,"lang":"en","type":"article","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Toronto","funders":"","keywords":"CMOS; Analogue electronics; Electronic circuit; Mixed-signal integrated circuit; Transistor; Electronic engineering; Computer science; Integrated circuit design; Electrical engineering; Circuit design; Integrated circuit; Analog multiplier; Reliability (semiconductor); Engineering; Power (physics); Voltage; Analog signal; Physics","score_opus":0.018426386676569945,"score_gpt":0.2307778759764783,"score_spread":0.21235148929990835,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1901792139","genre_codex":"methods","genre_gemma":"methods","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"methods","genre_consensus":"methods","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.017855398,0.018424885,0.7641344,0.0015826677,0.0029108424,0.00034447107,0.0004468863,0.0034388306,0.19086157],"genre_scores_gemma":[0.30861795,0.021799484,0.48431388,0.0015344869,0.0013676719,0.00041365725,0.0007268917,0.00046870735,0.18075715],"study_design_codex":"design_other","study_design_gemma":"not_applicable","domain_scores_codex":[0.99974805,0.000045946992,0.000018293471,0.000034438675,0.00013504043,0.000018304536],"domain_scores_gemma":[0.99966645,0.0000750731,0.000026858992,0.000045986286,0.00016737715,0.000018296234],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00030567893,0.00034129,0.0002815078,0.00041587857,0.00025576344,0.001158505,0.00049348525,0.00047021618,0.02529953],"category_scores_gemma":[0.00054049795,0.00017047489,0.00029304158,0.00037992114,0.0002317675,0.0008263072,0.00026442358,0.0003870748,0.0058547044],"study_design_candidate":"not_applicable","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0002265267,0.00004832549,0.0010149822,0.0011534934,0.00008632064,0.00032734824,0.00030097575,0.013298939,0.10918258,0.102754995,0.057367515,0.7142379],"study_design_scores_gemma":[0.000044184857,0.0008218642,0.00077642413,0.00021805476,0.00013450166,0.001280629,0.000110532696,0.05514675,0.037719365,0.025280906,0.8784328,0.00003395663],"about_ca_topic_score_codex":0.0004936854,"about_ca_topic_score_gemma":0.0011874704,"teacher_disagreement_score":0.02529953,"about_ca_system_score_codex":0.0004662899,"about_ca_system_score_gemma":0.0003313279,"threshold_uncertainty_score":0.08463532},"labels":[],"label_agreement":null},{"id":"W1914254044","doi":"10.1109/iccdcs.2000.869845","title":"The dynamic threshold voltage MOSFET","year":2002,"lang":"en","type":"article","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":9,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McMaster University","funders":"","keywords":"MOSFET; CMOS; Electrical engineering; Threshold voltage; Biasing; Transistor; Silicon on insulator; Power MOSFET; Materials science; Power semiconductor device; Low-power electronics; Voltage; Electronic engineering; Optoelectronics; Low voltage; Power (physics); Engineering; Power consumption; Silicon; Physics","score_opus":0.016330179693596056,"score_gpt":0.21591177672021342,"score_spread":0.19958159702661737,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1914254044","genre_codex":"review","genre_gemma":"methods","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"methods","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.043461204,0.40688357,0.28742746,0.002946177,0.005233102,0.00025514525,0.00083056604,0.0011303915,0.2518323],"genre_scores_gemma":[0.4475043,0.30442038,0.1306039,0.0030410688,0.0023989168,0.00031947467,0.00093950646,0.00019899683,0.110573515],"study_design_codex":"design_other","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99986947,0.000008504312,0.000006787656,0.00003273432,0.00006549535,0.000017067387],"domain_scores_gemma":[0.9999242,0.000017788409,0.000008343279,0.000007534413,0.000032992204,0.000009090057],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000113254355,0.0003421509,0.0003521318,0.00044682386,0.0002417149,0.0009596221,0.0006034959,0.00063870667,0.0023630688],"category_scores_gemma":[0.0002547202,0.00016101678,0.00022734837,0.00053718395,0.00039322308,0.0010331903,0.00045904724,0.0005809742,0.0015586325],"study_design_candidate":"simulation_or_modeling","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00007745858,0.000051947027,0.00080675987,0.0013154078,0.000040626037,0.0008168078,0.00019712797,0.0049820757,0.16952685,0.28972393,0.026561605,0.5058993],"study_design_scores_gemma":[0.000010139012,0.00022423154,0.0004992858,0.00018291581,0.000037934686,0.0037350678,0.000042775147,0.007553662,0.052097484,0.022623409,0.9129475,0.000045607612],"about_ca_topic_score_codex":0.000401894,"about_ca_topic_score_gemma":0.00049072475,"teacher_disagreement_score":0.0023630688,"about_ca_system_score_codex":0.0005309256,"about_ca_system_score_gemma":0.00037104817,"threshold_uncertainty_score":0.007905185},"labels":[],"label_agreement":null},{"id":"W1922176522","doi":"10.1007/978-1-4614-0481-1_6","title":"MOSFET/CMOS Technology","year":2011,"lang":"en","type":"book-chapter","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Crosslight Software (Canada)","funders":"","keywords":"NMOS logic; MOSFET; Simple (philosophy); CMOS; Extension (predicate logic); Process (computing); Computer science; Electronic engineering; Channel (broadcasting); Electrical engineering; Engineering; Transistor; Voltage","score_opus":0.02401923849305962,"score_gpt":0.19856716961776585,"score_spread":0.17454793112470623,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1922176522","genre_codex":"other","genre_gemma":"other","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"other","genre_consensus":"other","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.0030609032,0.05370438,0.05759759,0.0019249659,0.0053921756,0.00016314397,0.0008189402,0.001211407,0.87612647],"genre_scores_gemma":[0.021863082,0.04553865,0.0334586,0.0014379998,0.0010607867,0.0001282246,0.0007574666,0.00037762805,0.8953776],"study_design_codex":"design_other","study_design_gemma":"not_applicable","domain_scores_codex":[0.9998461,0.000007620305,0.000004745175,0.000028289709,0.0000991246,0.000014033915],"domain_scores_gemma":[0.9999497,0.000010551397,0.000003362198,0.0000081729195,0.00002291044,0.0000053096155],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0001158632,0.00084202876,0.00048128143,0.0007457817,0.000466249,0.0011775448,0.00093548873,0.00073125487,0.031568997],"category_scores_gemma":[0.00024149881,0.00032521223,0.00032433536,0.00077999383,0.00046055586,0.0013722196,0.00075940165,0.0011546885,0.022173608],"study_design_candidate":"not_applicable","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000033984965,0.000046983994,0.000093096736,0.0012381832,0.00002432368,0.000288311,0.00018983512,0.0012661342,0.03174257,0.23481835,0.26251677,0.46774146],"study_design_scores_gemma":[0.000003899109,0.000026955859,0.000111496774,0.00013499902,0.000009994911,0.00043661497,0.000021682996,0.0007965178,0.0057697385,0.020557271,0.97212243,0.0000083693185],"about_ca_topic_score_codex":0.00070337695,"about_ca_topic_score_gemma":0.0019355023,"teacher_disagreement_score":0.031568997,"about_ca_system_score_codex":0.0008427411,"about_ca_system_score_gemma":0.00092111586,"threshold_uncertainty_score":0.10560882},"labels":[],"label_agreement":null},{"id":"W1925720254","doi":"10.1109/cornel.1995.482426","title":"One-flux analysis of current blocking in double heterostructure bipolar transistors with composite collectors","year":2002,"lang":"en","type":"article","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Bell (Canada); National Research Council Canada; Institute for Microstructural Sciences","funders":"","keywords":"Bipolar junction transistor; Heterojunction; Flux (metallurgy); Composite number; Blocking (statistics); Materials science; Optoelectronics; Transistor; Diffusion; Gallium arsenide; Electrical engineering; Voltage; Physics; Composite material; Engineering; Computer science; Thermodynamics","score_opus":0.033419852707747534,"score_gpt":0.23674145506188096,"score_spread":0.20332160235413343,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1925720254","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.86308706,0.000949953,0.124284014,0.00014801833,0.000040657982,0.000041492003,0.000074836265,0.00015277564,0.011221143],"genre_scores_gemma":[0.9889157,0.00028394943,0.0089365365,0.000020349373,0.000021692164,0.000033762797,0.000043318323,0.000034578727,0.001710067],"study_design_codex":"simulation_or_modeling","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999269,0.000013148096,0.000001857636,0.00000817908,0.00003402741,0.00001591997],"domain_scores_gemma":[0.99976975,0.00010863693,0.000034572928,0.000012593676,0.00005402,0.000020481675],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00024702528,0.00038850235,0.00037506942,0.00054797914,0.00037837052,0.00038086087,0.00058794155,0.00051786075,0.00079817907],"category_scores_gemma":[0.0005634108,0.0001630713,0.0003664821,0.00018898728,0.00048815928,0.00047150822,0.00022811156,0.00027597367,0.00013355391],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000538391,0.00015350459,0.0037182262,0.00021821978,0.00008499825,0.0005702819,0.00013681942,0.56203145,0.3419743,0.07687799,0.0005839596,0.013111912],"study_design_scores_gemma":[0.000011293541,0.00005581543,0.0007553974,0.000005189723,0.000008072038,0.000050031536,0.000008797952,0.9853416,0.010818258,0.0026551753,0.00028414078,0.0000061755863],"about_ca_topic_score_codex":0.0021198834,"about_ca_topic_score_gemma":0.0011030209,"teacher_disagreement_score":0.0021198834,"about_ca_system_score_codex":0.0006140059,"about_ca_system_score_gemma":0.00033535124,"threshold_uncertainty_score":0.0044549108},"labels":[],"label_agreement":null},{"id":"W1967180584","doi":"10.1145/1046192.1046210","title":"Design of programmable interconnect for sublithographic programmable logic arrays","year":2005,"lang":"en","type":"article","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":47,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":true,"ca_institutions":"","funders":"Office of Naval Research; Defense Advanced Research Projects Agency","keywords":"Complex programmable logic device; Lithography; Interconnection; Programmable logic array; Programmable Array Logic; Programmable logic device; Computer science; Simple programmable logic device; Erasable programmable logic device; Logic synthesis; Field-programmable gate array; Computational lithography; Computer architecture; Logic gate; CMOS; Macro; Logic family; Electronic engineering; Multiple patterning; Embedded system; Engineering; Materials science; Nanotechnology; Resist; Optoelectronics; Telecommunications","score_opus":0.042064588980258194,"score_gpt":0.26137979133361006,"score_spread":0.21931520235335186,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1967180584","genre_codex":"empirical","genre_gemma":"methods","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"methods","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.5953006,0.00068563444,0.3737654,0.00032338483,0.00008269305,0.00019837372,0.0005557088,0.0021481155,0.026940156],"genre_scores_gemma":[0.83391,0.0003308643,0.15951683,0.000072604336,0.000018723314,0.00020661957,0.00038099661,0.00012237416,0.0054410533],"study_design_codex":"bench_or_experimental","study_design_gemma":"not_applicable","domain_scores_codex":[0.9999255,0.000013864758,0.0000047542308,0.000015784251,0.000024194685,0.000015909383],"domain_scores_gemma":[0.9999075,0.000019450456,0.000027878978,0.000014235278,0.000020349482,0.00001049968],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00008680182,0.00029101025,0.00014865267,0.0002686034,0.00022062236,0.00049104437,0.00041810502,0.00015429259,0.0013862263],"category_scores_gemma":[0.00018539415,0.00014762956,0.00012642189,0.00022989741,0.00020538607,0.0002662813,0.00020627648,0.00014549917,0.00027385063],"study_design_candidate":"not_applicable","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00032858964,0.00011090763,0.0029620435,0.0005250813,0.00006863294,0.0006924585,0.00031677372,0.26738843,0.48801348,0.07277248,0.009139165,0.15768199],"study_design_scores_gemma":[0.00011834167,0.0008983041,0.0018748296,0.000029876295,0.00007135769,0.00024783026,0.00011736004,0.78820986,0.1580357,0.014895747,0.035469193,0.000031552616],"about_ca_topic_score_codex":0.0006899633,"about_ca_topic_score_gemma":0.0028808303,"teacher_disagreement_score":0.0013862263,"about_ca_system_score_codex":0.0005244421,"about_ca_system_score_gemma":0.0005735281,"threshold_uncertainty_score":0.0046373606},"labels":[],"label_agreement":null},{"id":"W1970344759","doi":"10.1063/1.1610233","title":"Fokker–Planck approach to extending the one-flux method of carrier transport in semiconductors to variable energies","year":2003,"lang":"en","type":"article","venue":"Journal of Applied Physics","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":6,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Institute for Microstructural Sciences","funders":"","keywords":"Flux (metallurgy); Physics; Boltzmann equation; Fokker–Planck equation; Limit (mathematics); Field (mathematics); Boltzmann constant; Statistical physics; Planck; Energy flux; Variable (mathematics); Quantum electrodynamics; Computational physics; Quantum mechanics; Differential equation; Mathematical analysis; Chemistry; Mathematics","score_opus":0.026109341172734772,"score_gpt":0.2546282470483664,"score_spread":0.22851890587563162,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1970344759","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.009488722,0.0090008285,0.94060194,0.0018982321,0.0013073098,0.00007740781,0.000070895876,0.00017773082,0.037376914],"genre_scores_gemma":[0.33457193,0.031644884,0.56235194,0.0016879939,0.0025432077,0.00065423915,0.00017394626,0.00049851224,0.06587346],"study_design_codex":"theoretical_or_conceptual","study_design_gemma":"theoretical_or_conceptual","domain_scores_codex":[0.99955386,0.00015278658,0.00002297989,0.00006799535,0.00015811458,0.00004419359],"domain_scores_gemma":[0.99947244,0.00029219963,0.000039885184,0.00008822381,0.00008817275,0.000019067222],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0011277056,0.00091445557,0.0009782428,0.0013377545,0.0010642147,0.0013381233,0.0018890369,0.0016795499,0.0023825557],"category_scores_gemma":[0.0025097465,0.0004136336,0.0011265626,0.0009520584,0.0022231173,0.003017632,0.0013223819,0.0027116565,0.0007917661],"study_design_candidate":"theoretical_or_conceptual","study_design_consensus":"theoretical_or_conceptual","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0000119231945,0.000017287568,0.000040498307,0.00011099643,0.000010553065,0.00012100747,0.00013584051,0.011897316,0.001992509,0.9716116,0.0011040107,0.012946464],"study_design_scores_gemma":[0.000010359718,0.000024186229,0.00010424281,0.000038797498,0.000010768663,0.00022155231,0.000024194189,0.11155029,0.001503656,0.8676305,0.018845964,0.000035430556],"about_ca_topic_score_codex":0.0015881252,"about_ca_topic_score_gemma":0.0010914744,"teacher_disagreement_score":0.0023825557,"about_ca_system_score_codex":0.0012564264,"about_ca_system_score_gemma":0.0010569411,"threshold_uncertainty_score":0.009115994},"labels":[],"label_agreement":null},{"id":"W1971388409","doi":"10.1587/elex.8.1983","title":"Preference of designing CMOS subthreshold logic circuits using uniform-size transistors","year":2011,"lang":"en","type":"article","venue":"IEICE Electronics Express","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Carleton University","funders":"","keywords":"PMOS logic; NMOS logic; Electronic circuit; CMOS; Subthreshold conduction; Transistor; Electronic engineering; Pass transistor logic; Computer science; Digital electronics; Integrated injection logic; Electrical engineering; Engineering; Voltage","score_opus":0.08181886526715315,"score_gpt":0.23932501404044604,"score_spread":0.1575061487732929,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1971388409","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.52777284,0.0014780142,0.44701672,0.0003641288,0.0001158603,0.00011497302,0.00011302022,0.0006827097,0.022341756],"genre_scores_gemma":[0.9006776,0.00040934337,0.09603113,0.00011920663,0.000035153233,0.000049801074,0.000055473993,0.000038372542,0.0025839787],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99987984,0.00002441321,0.000009136899,0.000032913627,0.000039238348,0.000014449898],"domain_scores_gemma":[0.99969625,0.00010928097,0.000056138648,0.000060938975,0.00005830875,0.000019148563],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00014397774,0.00032618255,0.00015842928,0.00016039633,0.00015559954,0.00034483807,0.00043874912,0.00019620603,0.0016307987],"category_scores_gemma":[0.00070283154,0.000103880666,0.00015994516,0.00015121285,0.00018870496,0.00072242523,0.00018664243,0.00017545155,0.0003043596],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000373027,0.00008410531,0.0019131787,0.00030087202,0.000035854522,0.0002713278,0.0000850585,0.02386598,0.81102514,0.036672696,0.0010018446,0.12437104],"study_design_scores_gemma":[0.00012297933,0.0019738667,0.0049040015,0.000049378916,0.0001274356,0.0013920553,0.000117117044,0.268441,0.69099665,0.014737587,0.017100615,0.000037268575],"about_ca_topic_score_codex":0.00017464806,"about_ca_topic_score_gemma":0.000570875,"teacher_disagreement_score":0.0016307987,"about_ca_system_score_codex":0.00019577116,"about_ca_system_score_gemma":0.00016014218,"threshold_uncertainty_score":0.005455613},"labels":[],"label_agreement":null},{"id":"W1972305958","doi":"10.1116/1.2200376","title":"GaAsNSb-base GaAs heterojunction bipolar transistor with a low turn-on voltage","year":2006,"lang":"en","type":"article","venue":"Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":10,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Institute for Microstructural Sciences","funders":"","keywords":"Heterojunction bipolar transistor; Materials science; Heterojunction; Optoelectronics; Bipolar junction transistor; Heterostructure-emitter bipolar transistor; Molecular beam epitaxy; Voltage; Transistor; Epitaxy; Nitride; Blocking (statistics); Breakdown voltage; Electrical engineering; Nanotechnology; Computer science; Engineering","score_opus":0.007263930152422794,"score_gpt":0.18966471360847284,"score_spread":0.18240078345605004,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1972305958","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9938259,0.00052018743,0.0019931828,0.00011605622,0.00006389276,0.00003543304,0.00024367536,0.00011506798,0.0030865574],"genre_scores_gemma":[0.99298096,0.0002999226,0.0038211201,0.000039002043,0.000030854833,0.000032904587,0.00017962597,0.000015817617,0.002599664],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99988055,0.000010749429,0.000004969938,0.000020875446,0.00006063054,0.000022156832],"domain_scores_gemma":[0.9998826,0.000017460632,0.000015072115,0.000015915319,0.00003239997,0.00003659356],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00010526121,0.00019246078,0.000287721,0.00013755924,0.000264899,0.00033654989,0.00047420766,0.00042705663,0.000928798],"category_scores_gemma":[0.00014290595,0.00021945334,0.00012159741,0.00021160957,0.00013690352,0.00024418437,0.00013430497,0.00022733017,0.0004409781],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00003240301,0.000024778754,0.00028588972,0.0000268284,0.0000069091393,0.00008120582,0.000010568629,0.00016612007,0.9980813,0.00022796747,0.00015285684,0.0009032166],"study_design_scores_gemma":[0.000093204406,0.0008250676,0.013242711,0.00001580294,0.00004833707,0.00066940597,0.000031838477,0.009792297,0.9697515,0.00023825381,0.00527716,0.000014519111],"about_ca_topic_score_codex":0.001311501,"about_ca_topic_score_gemma":0.004744236,"teacher_disagreement_score":0.001311501,"about_ca_system_score_codex":0.00034636204,"about_ca_system_score_gemma":0.000238516,"threshold_uncertainty_score":0.0031071305},"labels":[],"label_agreement":null},{"id":"W1972645842","doi":"10.1063/1.2974088","title":"Carrier-phonon interaction in small cross-sectional silicon nanowires","year":2008,"lang":"en","type":"article","venue":"Journal of Applied Physics","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":68,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"National Institute of Standards and Technology; Purdue University","keywords":"Phonon; Silicon nanowires; Nanowire; Condensed matter physics; Silicon; Materials science; Perturbation theory (quantum mechanics); Electron; Electron mobility; Dispersion (optics); Electronic band structure; Optoelectronics; Physics; Optics; Quantum mechanics","score_opus":0.03419410214818777,"score_gpt":0.2633908769228031,"score_spread":0.22919677477461534,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1972645842","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9952502,0.00012702544,0.0030284857,0.000038645958,0.000010672347,0.000004828766,0.000015249762,0.00003326464,0.0014915894],"genre_scores_gemma":[0.99896705,0.000076520875,0.0005165181,0.00000678545,0.0000037402908,0.0000053041854,0.000020596413,0.0000065966465,0.00039697823],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999176,0.00001620591,0.000002539025,0.000015448573,0.00003356508,0.000014541325],"domain_scores_gemma":[0.9998584,0.00008079873,0.00001699275,0.000010592334,0.000017993749,0.000015118421],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0001618923,0.00019794116,0.00025345173,0.00019941895,0.00023035775,0.00035725714,0.00027673275,0.0003410999,0.00085548486],"category_scores_gemma":[0.0003394076,0.00023598073,0.00014320428,0.000116580464,0.00045216217,0.00026844215,0.0002305509,0.00024146888,0.00012607085],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00040231386,0.00020940455,0.0033280996,0.00013383025,0.0000830967,0.0005906518,0.00016541962,0.13951643,0.83347994,0.017012926,0.00030640172,0.004771483],"study_design_scores_gemma":[0.00007443467,0.00024993118,0.007859141,0.000011119418,0.000037536916,0.00016982574,0.00008263711,0.84677774,0.14088564,0.0032303655,0.0005865404,0.00003510865],"about_ca_topic_score_codex":0.0010317832,"about_ca_topic_score_gemma":0.00092914375,"teacher_disagreement_score":0.0010317832,"about_ca_system_score_codex":0.00035095814,"about_ca_system_score_gemma":0.0002208825,"threshold_uncertainty_score":0.0028618574},"labels":[],"label_agreement":null},{"id":"W1974428526","doi":"10.1116/1.1648672","title":"Temperature distribution and heating in multiple emitter SiGe HBTs","year":2004,"lang":"en","type":"article","venue":"Journal of Vacuum Science & Technology A Vacuum Surfaces and Films","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Institute for Microstructural Sciences","funders":"","keywords":"Common emitter; Heterojunction bipolar transistor; Materials science; Bipolar junction transistor; Optoelectronics; Biasing; Thermal; Coupling (piping); Heterostructure-emitter bipolar transistor; Transistor; Junction temperature; Voltage; Electrical engineering; Physics; Composite material","score_opus":0.009020204276075066,"score_gpt":0.22612730201788228,"score_spread":0.21710709774180723,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1974428526","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99766845,0.00012110427,0.0018733282,0.000009524025,0.0000021597734,0.0000010394716,0.000011053796,0.000020161919,0.00029320555],"genre_scores_gemma":[0.999482,0.000028743514,0.0003112885,0.0000022208544,0.000001389208,0.000001141996,0.00000872064,0.0000050883255,0.00015942562],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999229,0.0000076505785,0.0000026648052,0.000026895848,0.00002452244,0.000015360833],"domain_scores_gemma":[0.99984014,0.000054872147,0.00003851261,0.000022518389,0.000030267984,0.000013638738],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00009939128,0.0001157104,0.00013699781,0.00022243884,0.00015224367,0.00027925993,0.00012084341,0.00018825404,0.0004039045],"category_scores_gemma":[0.00027460518,0.00015374538,0.00008863016,0.00014474502,0.00029619253,0.00036760638,0.00014690204,0.00023506723,0.000087777946],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0001582926,0.00003853736,0.0065573775,0.000018504294,0.000012367164,0.00016258865,0.00016370766,0.0055412524,0.98157054,0.00027369242,0.00003316193,0.005469883],"study_design_scores_gemma":[0.00001776833,0.00031669662,0.048652336,0.000009818933,0.000027557948,0.0004104601,0.0001426247,0.044570412,0.904677,0.00045545094,0.00069572695,0.000024112718],"about_ca_topic_score_codex":0.00041450927,"about_ca_topic_score_gemma":0.00036851937,"teacher_disagreement_score":0.00041450927,"about_ca_system_score_codex":0.00020880085,"about_ca_system_score_gemma":0.000059101138,"threshold_uncertainty_score":0.0015149117},"labels":[],"label_agreement":null},{"id":"W1977516536","doi":"10.1109/ets.2013.6569367","title":"Current testing: Dead or alive?","year":2013,"lang":"en","type":"article","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Infineon Technologies (Canada)","funders":"","keywords":"Computer science; Current (fluid); Engineering; Electrical engineering","score_opus":0.05845541437368095,"score_gpt":0.26590316584889434,"score_spread":0.20744775147521338,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1977516536","genre_codex":"commentary","genre_gemma":"commentary","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"commentary","genre_consensus":"commentary","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.0046049613,0.2488683,0.031697962,0.6355184,0.033858456,0.000056051296,0.00019869844,0.0007558069,0.044441383],"genre_scores_gemma":[0.24824005,0.22350255,0.024102563,0.40064833,0.045915477,0.00021478151,0.00050059165,0.0010941525,0.055781413],"study_design_codex":"design_other","study_design_gemma":"not_applicable","domain_scores_codex":[0.9847874,0.006192726,0.0010826438,0.0017418222,0.0054030274,0.0007924338],"domain_scores_gemma":[0.9572362,0.026392069,0.002476011,0.003125792,0.008434498,0.0023353903],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.015718212,0.0012538149,0.00142288,0.003200017,0.0029866206,0.010015381,0.0036012053,0.008989472,0.007167768],"category_scores_gemma":[0.04816986,0.0006149087,0.0005412313,0.0018779024,0.034718778,0.03018634,0.004996063,0.012100294,0.0045648483],"study_design_candidate":"not_applicable","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00017157345,0.00008717362,0.0026704613,0.00127949,0.00004417007,0.00065654324,0.0044175414,0.00019791583,0.0010288547,0.2702626,0.1955581,0.5236255],"study_design_scores_gemma":[0.000032292643,0.00018785283,0.00082095905,0.0029190197,0.00004084871,0.0032942418,0.0049736137,0.00042414997,0.0011425345,0.28703094,0.6990402,0.00009343757],"about_ca_topic_score_codex":0.0015760417,"about_ca_topic_score_gemma":0.0012641462,"teacher_disagreement_score":0.015718212,"about_ca_system_score_codex":0.0030948792,"about_ca_system_score_gemma":0.0026099503,"threshold_uncertainty_score":0.08312684},"labels":[],"label_agreement":null},{"id":"W1978433622","doi":"10.1007/s10825-015-0690-4","title":"Quasi-3D subthreshold current and subthreshold swing models of dual-metal quadruple-gate (DMQG) MOSFETs","year":2015,"lang":"en","type":"article","venue":"Journal of Computational Electronics","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":10,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Memorial University of Newfoundland","funders":"","keywords":"Subthreshold conduction; Subthreshold slope; Current (fluid); Physics; Cathode; Poisson's equation; Subthreshold swing; Channel (broadcasting); MOSFET; Transistor; Electrical engineering; Computational physics; Quantum mechanics; Engineering; Voltage","score_opus":0.03818318936558215,"score_gpt":0.26969085286955174,"score_spread":0.2315076635039696,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1978433622","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.7446193,0.0030444558,0.16733973,0.0019338336,0.00028221443,0.00015996107,0.0018070027,0.0005430156,0.080270514],"genre_scores_gemma":[0.9836647,0.0005094584,0.005729397,0.00017038101,0.000037321384,0.00004878575,0.00020453581,0.00005888165,0.009576596],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99994063,0.00001328569,0.0000026225873,0.000009203264,0.000018734272,0.00001549863],"domain_scores_gemma":[0.9998746,0.00003749107,0.000014944352,0.000014750426,0.00003659431,0.000021649344],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00024617746,0.0003762152,0.0005496282,0.0004467625,0.00040613284,0.000771323,0.0012751409,0.0012105082,0.0027195287],"category_scores_gemma":[0.00032983968,0.0002577146,0.00069084065,0.0003518474,0.00056262437,0.0007651464,0.0003070008,0.00036366287,0.00052427716],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00020500435,0.00009002931,0.0011472007,0.00017968442,0.00006521188,0.00064971804,0.00030871865,0.754857,0.03155733,0.2024679,0.0030186072,0.00545363],"study_design_scores_gemma":[0.0000039977217,0.000009407947,0.00012266246,0.000005527193,0.000004059468,0.000027928947,0.000012127288,0.9942211,0.00020504087,0.0050612167,0.00032192428,0.0000051511734],"about_ca_topic_score_codex":0.0074094217,"about_ca_topic_score_gemma":0.0098020015,"teacher_disagreement_score":0.0074094217,"about_ca_system_score_codex":0.0012214826,"about_ca_system_score_gemma":0.0006053062,"threshold_uncertainty_score":0.014732599},"labels":[],"label_agreement":null},{"id":"W1980779594","doi":"10.1364/iqec.2004.iwa5","title":"Quantum kinetics of pure spin and charge currents","year":2004,"lang":"en","type":"article","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Toronto","funders":"","keywords":"Condensed matter physics; Relaxation (psychology); Spin (aerodynamics); Scattering; Charge (physics); Kinetics; Kinetic energy; Semiconductor; Physics; Spin current; Spin polarization; Materials science; Electron; Quantum mechanics; Thermodynamics","score_opus":0.01925681473567872,"score_gpt":0.250982209978877,"score_spread":0.23172539524319827,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1980779594","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.33715862,0.008033592,0.41508234,0.003580315,0.0019579912,0.00029353402,0.00053038873,0.0006260945,0.23273714],"genre_scores_gemma":[0.95114565,0.0021905247,0.014415749,0.00040386806,0.00019164586,0.00015294297,0.000141687,0.00010989186,0.031248158],"study_design_codex":"theoretical_or_conceptual","study_design_gemma":"theoretical_or_conceptual","domain_scores_codex":[0.9993911,0.000074042546,0.000020115442,0.00008668429,0.0003115456,0.000116531715],"domain_scores_gemma":[0.9992403,0.00039111424,0.00004657999,0.000123136,0.00014049142,0.000058501115],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00082864077,0.00036208247,0.0005650976,0.0004968421,0.00078523066,0.0015733533,0.0009148158,0.00088420097,0.004744238],"category_scores_gemma":[0.0026734408,0.0004584534,0.0005036581,0.0003208169,0.0021664072,0.0028242585,0.0009720057,0.0014969783,0.0007592276],"study_design_candidate":"theoretical_or_conceptual","study_design_consensus":"theoretical_or_conceptual","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000032252417,0.000024765981,0.00010677535,0.000056066267,0.0000067576634,0.00006461248,0.00013989198,0.0062367036,0.010482557,0.97841954,0.00077968056,0.0036504455],"study_design_scores_gemma":[0.00004725474,0.0000528954,0.00047626294,0.000028428884,0.000008827467,0.0001958731,0.00009280758,0.20519073,0.013165395,0.77326834,0.0074228616,0.000050403247],"about_ca_topic_score_codex":0.0013950393,"about_ca_topic_score_gemma":0.0007238594,"teacher_disagreement_score":0.004744238,"about_ca_system_score_codex":0.0011805822,"about_ca_system_score_gemma":0.00089978846,"threshold_uncertainty_score":0.015871048},"labels":[],"label_agreement":null},{"id":"W1982238004","doi":"10.1016/s0038-1101(00)00083-6","title":"A scalable thermal model for trench isolated bipolar devices","year":2000,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":17,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Nortel (Canada); Carleton University","funders":"","keywords":"Trench; Bipolar junction transistor; Scalability; Thermal; Thermal resistance; Materials science; Transistor; Variety (cybernetics); Optoelectronics; Electronic engineering; Computer science; Electrical engineering; Engineering; Physics; Nanotechnology; Thermodynamics; Voltage","score_opus":0.01289828342069317,"score_gpt":0.24623076930596696,"score_spread":0.2333324858852738,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1982238004","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.072883934,0.0017671055,0.84781533,0.0007802291,0.0003081133,0.00022959069,0.0010434011,0.0012942508,0.07387801],"genre_scores_gemma":[0.89989954,0.0013245917,0.05707258,0.00031584274,0.00016537703,0.000480094,0.0006142232,0.0005929483,0.039534763],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99986124,0.000018979701,0.0000040989685,0.000030781106,0.000054026954,0.000030964562],"domain_scores_gemma":[0.99981886,0.0000653461,0.000022203567,0.000027413038,0.000051418712,0.000014910409],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00021703332,0.0008769797,0.0009571493,0.00034585918,0.0006290741,0.00093477505,0.0023029111,0.0014016272,0.006171568],"category_scores_gemma":[0.00078660756,0.0005455077,0.00080735394,0.00044925188,0.00055073394,0.0014570305,0.0007145464,0.0009911068,0.0011873721],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000023379765,0.000028484297,0.00008349946,0.00004976114,0.00001651733,0.00007367143,0.00002596824,0.976299,0.006161293,0.013385477,0.0008926213,0.0029604088],"study_design_scores_gemma":[0.0000030990761,0.000005899399,0.000024659508,0.0000020066161,0.0000032356606,0.000006840878,0.0000033439092,0.9976109,0.00024998072,0.0017377621,0.00034997595,0.000002238414],"about_ca_topic_score_codex":0.0074614063,"about_ca_topic_score_gemma":0.0076732202,"teacher_disagreement_score":0.0074614063,"about_ca_system_score_codex":0.0012285255,"about_ca_system_score_gemma":0.0010800898,"threshold_uncertainty_score":0.020645916},"labels":[],"label_agreement":null},{"id":"W198275590","doi":"","title":"CMOL FPGA circuits.","year":2006,"lang":"en","type":"article","venue":"CDES","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":20,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":true,"ca_institutions":"","funders":"","keywords":"CMOS; Electronic circuit; Field-programmable gate array; Electronic engineering; Computer science; Transistor; Integrated circuit; Electrical engineering; Embedded system; Engineering; Voltage","score_opus":0.011566661057050532,"score_gpt":0.20547448681432612,"score_spread":0.19390782575727558,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W198275590","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.10592432,0.0044646477,0.55790913,0.0010106441,0.0006952338,0.0006307217,0.0035983205,0.040729675,0.28503725],"genre_scores_gemma":[0.6452302,0.0012190351,0.2417155,0.0013488703,0.00012020847,0.00027045966,0.0044069844,0.0008378546,0.10485088],"study_design_codex":"design_other","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99979955,0.000022814798,0.000007365196,0.00003660455,0.00008587107,0.000047802383],"domain_scores_gemma":[0.99984,0.000029932928,0.000019158242,0.000047680474,0.00005251549,0.000010544386],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00013407426,0.0005143103,0.00012979051,0.00044483112,0.00023005948,0.00068781804,0.00096515974,0.00028610925,0.026179958],"category_scores_gemma":[0.00032118382,0.00015198419,0.00017328816,0.00026896372,0.00014486002,0.00065040356,0.000363859,0.0003049399,0.004891116],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0007819116,0.00013517754,0.0025434631,0.00073487853,0.00008048476,0.0005687959,0.00013645047,0.013323406,0.11739762,0.08766036,0.07836329,0.6982742],"study_design_scores_gemma":[0.00018218817,0.00049892557,0.0022443119,0.00009878269,0.00006929026,0.0013799844,0.0000812606,0.097712584,0.23187728,0.008645891,0.6571467,0.00006288586],"about_ca_topic_score_codex":0.0010560403,"about_ca_topic_score_gemma":0.0038661743,"teacher_disagreement_score":0.026179958,"about_ca_system_score_codex":0.00069617893,"about_ca_system_score_gemma":0.000302758,"threshold_uncertainty_score":0.08758074},"labels":[],"label_agreement":null},{"id":"W1984399768","doi":"10.1063/1.4884681","title":"Hall effect in nanowires","year":2014,"lang":"en","type":"article","venue":"Journal of Applied Physics","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":10,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Toronto","funders":"","keywords":"Nanowire; Hall effect; RADIUS; Condensed matter physics; Materials science; Semiconductor; Diffusion; Planar; Electrical resistivity and conductivity; Nanotechnology; Physics; Optoelectronics; Quantum mechanics","score_opus":0.008089451201960982,"score_gpt":0.21604168838126084,"score_spread":0.20795223717929986,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1984399768","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.66795385,0.01416795,0.19224708,0.0010811649,0.0009759951,0.00008432042,0.00036601734,0.00078676234,0.12233686],"genre_scores_gemma":[0.98219347,0.0020039675,0.006188439,0.00008627563,0.00017511225,0.00003716158,0.00008389175,0.00004547759,0.009186201],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998841,0.00002045493,0.0000033779825,0.000029032364,0.000046685942,0.000016303178],"domain_scores_gemma":[0.99990606,0.000050589857,0.000009032453,0.0000112005655,0.000014708229,0.0000084432695],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00011619125,0.0001742545,0.00031838118,0.00018494355,0.00029867401,0.00058069656,0.000259426,0.00041814608,0.0013056241],"category_scores_gemma":[0.0005360789,0.00016671524,0.00016044741,0.00014519026,0.00047507344,0.0006126369,0.00044510767,0.00020272023,0.00029729476],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0002112769,0.000064111344,0.0013451958,0.0008180545,0.000057021487,0.0010646562,0.0002639842,0.052043978,0.47069237,0.4407946,0.00426156,0.02838332],"study_design_scores_gemma":[0.00011719611,0.00047563846,0.005717601,0.00019901356,0.000072389616,0.0014132971,0.00024884587,0.520016,0.21761464,0.21515587,0.03885846,0.000111080386],"about_ca_topic_score_codex":0.00018005032,"about_ca_topic_score_gemma":0.00021367618,"teacher_disagreement_score":0.0013056241,"about_ca_system_score_codex":0.00027858498,"about_ca_system_score_gemma":0.00011831883,"threshold_uncertainty_score":0.004367709},"labels":[],"label_agreement":null},{"id":"W1984718768","doi":"10.1063/1.4861059","title":"Extreme sub-threshold swing in tunnelling relays","year":2014,"lang":"en","type":"article","venue":"Applied Physics Letters","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":6,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McGill University; Regroupement Québécois sur les Matériaux de Pointe","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Quantum tunnelling; Swing; Thermionic emission; Transistor; Materials science; Current (fluid); Nanoelectronics; Optoelectronics; Physics; Condensed matter physics; Nanotechnology; Electron; Voltage; Quantum mechanics; Thermodynamics","score_opus":0.02256418585302237,"score_gpt":0.20226751351016,"score_spread":0.17970332765713765,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1984718768","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.8259663,0.0010419124,0.15743911,0.00041607927,0.000058657755,0.000040682644,0.000044754495,0.0002635407,0.014728969],"genre_scores_gemma":[0.99586844,0.00022857824,0.0031062858,0.000016171312,0.00001018691,0.000011816955,0.000006967623,0.000009043401,0.0007425256],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999224,0.000013769354,0.00000270074,0.00001397495,0.000031822572,0.000015282389],"domain_scores_gemma":[0.9999018,0.00004616283,0.000019930252,0.000008594208,0.000011352894,0.0000122721385],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00016503947,0.00024581508,0.0002410392,0.00017494606,0.00019000091,0.00050284236,0.0004856465,0.00053522695,0.00077403896],"category_scores_gemma":[0.0004947511,0.00012430677,0.000180453,0.00010726822,0.0006671844,0.00082808547,0.00035615635,0.00037978528,0.00020649098],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00024652033,0.00008301914,0.0010491807,0.00013550883,0.000027710008,0.0012293933,0.00034272487,0.17943835,0.46093705,0.34545594,0.00054152997,0.010513181],"study_design_scores_gemma":[0.00002136137,0.0002660133,0.0003500277,0.000011909126,0.000012595927,0.00033986743,0.00005428283,0.9085465,0.03708452,0.05197244,0.0013132626,0.000027206346],"about_ca_topic_score_codex":0.00017702884,"about_ca_topic_score_gemma":0.00013030054,"teacher_disagreement_score":0.00077403896,"about_ca_system_score_codex":0.0003415463,"about_ca_system_score_gemma":0.00015362626,"threshold_uncertainty_score":0.002589345},"labels":[],"label_agreement":null},{"id":"W1990747956","doi":"10.1109/jssc.2012.2193516","title":"Correction to “A 1-V Process-Insensitive Current-Scalable Two-Stage Opamp With Enhanced DC Gain and Settling Behavior in 65-nm Digital CMOS” [Mar 11 660-668]","year":2012,"lang":"en","type":"article","venue":"IEEE Journal of Solid-State Circuits","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McGill University","funders":"","keywords":"Settling; Settling time; Stage (stratigraphy); Compensation (psychology); Operational amplifier; Scalability; CMOS; Computer science; Electrical engineering; Electronic engineering; Physics; Psychology; Engineering; Control engineering; Thermodynamics; Amplifier; Geology; Social psychology","score_opus":0.019325194574958317,"score_gpt":0.2859148396204776,"score_spread":0.2665896450455193,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1990747956","genre_codex":"editorial","genre_gemma":"other","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"other","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.00024025081,0.0014974747,0.0023181105,0.032246765,0.9608682,0.000031296728,0.0005297753,0.0008506963,0.0014173824],"genre_scores_gemma":[0.018980866,0.010595069,0.014846765,0.14976163,0.5891632,0.00040965894,0.0029407055,0.0024143239,0.2108878],"study_design_codex":"not_applicable","study_design_gemma":"not_applicable","domain_scores_codex":[0.9974831,0.000281381,0.00046837458,0.00038904155,0.0010710817,0.00030700676],"domain_scores_gemma":[0.9851575,0.0035628742,0.0011199631,0.0009156564,0.008325459,0.0009186613],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0020056139,0.0034707533,0.0033544784,0.0027346185,0.0036719928,0.0024863307,0.0045650885,0.008749002,0.04106633],"category_scores_gemma":[0.020565938,0.0017583476,0.0023337388,0.0021462892,0.0029907608,0.002696711,0.002057538,0.014547237,0.03900827],"study_design_candidate":"not_applicable","study_design_consensus":"not_applicable","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00009924791,0.000017020528,0.000059208272,0.00036038904,0.000027633605,0.0005087057,0.0000513849,0.00010553919,0.0005262303,0.0012097515,0.98830557,0.00872922],"study_design_scores_gemma":[0.00006588094,0.000065382774,0.0008120053,0.00024242382,0.000046480298,0.0009970278,0.00007379603,0.0007051757,0.0015294679,0.0018158957,0.9935819,0.00006449225],"about_ca_topic_score_codex":0.009218807,"about_ca_topic_score_gemma":0.017613538,"teacher_disagreement_score":0.04106633,"about_ca_system_score_codex":0.0031025463,"about_ca_system_score_gemma":0.003497271,"threshold_uncertainty_score":0.13738054},"labels":[],"label_agreement":null},{"id":"W1993355704","doi":"10.1109/iscas.2014.6865698","title":"Delay-line temperature sensors and VLSI thermal management demonstrated on a 60nm FPGA","year":2014,"lang":"en","type":"article","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":16,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Toronto","funders":"","keywords":"MPSoC; Field-programmable gate array; Calibration; Very-large-scale integration; Computer science; Chip; Temperature control; Temperature measurement; Line (geometry); Electronic engineering; Computer hardware; System on a chip; Embedded system; Engineering; Physics","score_opus":0.008681399789405889,"score_gpt":0.20606100948433875,"score_spread":0.19737960969493287,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1993355704","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.8003133,0.0009746603,0.17890121,0.0003690471,0.00021543783,0.0001726775,0.0001940821,0.004336783,0.014522845],"genre_scores_gemma":[0.92706317,0.00017124011,0.0686588,0.00008333328,0.000016165728,0.00003910098,0.00006779537,0.00004035896,0.0038600925],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998079,0.000033462613,0.000011838089,0.000051904768,0.00005961198,0.00003534322],"domain_scores_gemma":[0.9998579,0.000027512795,0.000034577857,0.000033794167,0.00003376707,0.000012522709],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00013530011,0.0002930673,0.00020508001,0.00024324702,0.00013514371,0.00026379357,0.0005700516,0.00019155073,0.0017404716],"category_scores_gemma":[0.00033988745,0.00014122862,0.00009861178,0.00017223292,0.00014383296,0.00037719373,0.00016005106,0.00018871916,0.00023807658],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0010075058,0.00018665193,0.0051466734,0.00035889208,0.00006508809,0.00063792017,0.00036133695,0.034428358,0.72802055,0.0069117467,0.004513171,0.2183621],"study_design_scores_gemma":[0.00015818351,0.0016233389,0.0068847146,0.00004723188,0.00008033218,0.0008520029,0.000091246366,0.24398251,0.7215863,0.0006671268,0.023970239,0.000056797733],"about_ca_topic_score_codex":0.0022640184,"about_ca_topic_score_gemma":0.002383034,"teacher_disagreement_score":0.0022640184,"about_ca_system_score_codex":0.0005630847,"about_ca_system_score_gemma":0.00035070145,"threshold_uncertainty_score":0.0058224797},"labels":[],"label_agreement":null},{"id":"W1998703892","doi":"10.1149/1.3694388","title":"Recent Innovations in Leading-Edge Silicon Devices","year":2012,"lang":"en","type":"article","venue":"ECS Transactions","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Chipworks (Canada)","funders":"","keywords":"Dram; Transistor; Materials science; Optoelectronics; Silicon; Electronics; Flash (photography); Flash memory; Engineering physics; Nanotechnology; Gate dielectric; Enhanced Data Rates for GSM Evolution; Semiconductor; Electrical engineering; Computer science; Engineering; Telecommunications; Physics; Embedded system; Optics","score_opus":0.03465928297758892,"score_gpt":0.2678124311515598,"score_spread":0.23315314817397087,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1998703892","genre_codex":"review","genre_gemma":"review","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"review","genre_consensus":"review","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.045480426,0.50916654,0.032189783,0.02453706,0.01009143,0.00010925268,0.000599392,0.00078026747,0.3770459],"genre_scores_gemma":[0.26417094,0.5069831,0.03850639,0.010176561,0.006462496,0.00010598294,0.0010348901,0.00025664974,0.17230307],"study_design_codex":"design_other","study_design_gemma":"not_applicable","domain_scores_codex":[0.99944645,0.000065561224,0.00004552624,0.00009748204,0.0002545935,0.00009036885],"domain_scores_gemma":[0.99898607,0.0002611485,0.00006627472,0.0001117606,0.00044731534,0.00012732313],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0010669973,0.00042510644,0.00019927867,0.00087880116,0.0005846594,0.0017165085,0.0008801076,0.00071614125,0.011010128],"category_scores_gemma":[0.0015663555,0.00017840548,0.00027856373,0.0025214902,0.000511594,0.0019122362,0.0007491237,0.0008672027,0.004192683],"study_design_candidate":"not_applicable","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00011259379,0.000103026505,0.0017561862,0.0013576051,0.000016094784,0.00048961025,0.00057771255,0.001111676,0.008921002,0.0830808,0.040279504,0.8621942],"study_design_scores_gemma":[0.000006237196,0.00010415024,0.0010259867,0.00021952741,0.00001607161,0.0008142848,0.00026347637,0.00081447506,0.004681756,0.0113678975,0.98067117,0.000014996425],"about_ca_topic_score_codex":0.00091754127,"about_ca_topic_score_gemma":0.0022163729,"teacher_disagreement_score":0.011010128,"about_ca_system_score_codex":0.0010899418,"about_ca_system_score_gemma":0.00128391,"threshold_uncertainty_score":0.03683257},"labels":[],"label_agreement":null},{"id":"W1998954471","doi":"10.1002/jnm.641","title":"Comparing the MESFET and HEMT models for efficient circuit design","year":2007,"lang":"en","type":"article","venue":"International Journal of Numerical Modelling Electronic Networks Devices and Fields","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":4,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Ottawa","funders":"","keywords":"MESFET; High-electron-mobility transistor; Nonlinear system; Voltage; Quadratic equation; Electronic engineering; Computer science; Nonlinear model; Electrical engineering; Biological system; Engineering; Transistor; Mathematics; Physics; Field-effect transistor; Biology","score_opus":0.039006307046865224,"score_gpt":0.2575548665172432,"score_spread":0.21854855947037796,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1998954471","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.14477691,0.0011812646,0.83227336,0.0005669665,0.000117157855,0.000108633394,0.0003467957,0.0012668154,0.01936218],"genre_scores_gemma":[0.8514038,0.0008860038,0.13341442,0.00011696544,0.000034585602,0.00015746118,0.0002584658,0.00018797028,0.013540399],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99990726,0.000024177982,0.0000030062006,0.000011564691,0.00004639966,0.000007676338],"domain_scores_gemma":[0.9997454,0.0001337358,0.000016374677,0.000029888906,0.000065363674,0.0000092690825],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0002445644,0.00039098106,0.00027680214,0.0002152431,0.00013689164,0.000489725,0.00062931457,0.0005605208,0.0033327136],"category_scores_gemma":[0.0008771682,0.0001455712,0.0003425443,0.00021953894,0.00013483518,0.0007296455,0.00019787812,0.00036108558,0.00075110234],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00008723319,0.000035126304,0.00036329008,0.0000693578,0.000037422225,0.000055792458,0.000024004277,0.9465834,0.010361451,0.005791081,0.0009057976,0.03568606],"study_design_scores_gemma":[0.00000368403,0.00002008442,0.00004920062,0.0000026140556,0.000004626854,0.000011107739,0.0000027911951,0.996624,0.00201638,0.0005848499,0.0006787607,0.0000019585898],"about_ca_topic_score_codex":0.0020903023,"about_ca_topic_score_gemma":0.0044305734,"teacher_disagreement_score":0.0033327136,"about_ca_system_score_codex":0.00054028933,"about_ca_system_score_gemma":0.00051241537,"threshold_uncertainty_score":0.011148989},"labels":[],"label_agreement":null},{"id":"W2002657539","doi":"10.1116/1.3054269","title":"Stress-induced leakage current and random telegraph signal","year":2009,"lang":"en","type":"article","venue":"Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":7,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Hatch (Canada)","funders":"","keywords":"SILC; MOSFET; Materials science; Leakage (economics); Quantum tunnelling; Stress (linguistics); Transistor; Field-effect transistor; Optoelectronics; Electrical engineering; Engineering; Voltage","score_opus":0.015724436718823277,"score_gpt":0.23697256730805494,"score_spread":0.22124813058923165,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2002657539","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99774617,0.00011380563,0.00156601,0.000019208328,0.000008567391,0.0000061148903,0.00006290593,0.000053235046,0.00042408105],"genre_scores_gemma":[0.99960154,0.00002378014,0.0002043144,0.000007758321,0.0000031401237,0.0000031063855,0.0000373262,0.000004249304,0.000114863964],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99984515,0.000023550063,0.0000109430475,0.000037793267,0.000049015984,0.000033542772],"domain_scores_gemma":[0.99916553,0.00027407837,0.0002646867,0.0001116062,0.0001291079,0.00005505279],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00015627922,0.00018680765,0.00013519694,0.00024622816,0.00008651161,0.00013841566,0.00017189316,0.00021196275,0.00083051424],"category_scores_gemma":[0.0007940245,0.00009981926,0.00014453813,0.00018335067,0.00026861165,0.00025516306,0.00014830934,0.00015631289,0.000093590934],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00078145147,0.000061761646,0.010630821,0.00011504379,0.00002997021,0.00062911806,0.00016852721,0.0018933294,0.97631204,0.00041359937,0.0001572564,0.008806988],"study_design_scores_gemma":[0.00005194222,0.0021252213,0.05049134,0.00001295787,0.00006114485,0.0012787038,0.00011602025,0.017765842,0.9268787,0.00038204162,0.00080571277,0.000030435538],"about_ca_topic_score_codex":0.00020207856,"about_ca_topic_score_gemma":0.00020210708,"teacher_disagreement_score":0.00083051424,"about_ca_system_score_codex":0.0002495402,"about_ca_system_score_gemma":0.00009803581,"threshold_uncertainty_score":0.0027782917},"labels":[],"label_agreement":null},{"id":"W2002697935","doi":"10.1063/1.2939252","title":"Impact of carbon concentration on 1∕f noise and random telegraph signal noise in SiGe:C heterojunction bipolar transistors","year":2008,"lang":"en","type":"article","venue":"Journal of Applied Physics","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":14,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McMaster University","funders":"","keywords":"Noise (video); Bipolar junction transistor; Flicker noise; Figure of merit; Noise spectral density; Materials science; Optoelectronics; Noise figure; Transistor; Heterojunction; Analytical Chemistry (journal); Physics; Chemistry; Voltage; Amplifier; CMOS","score_opus":0.013495699521453228,"score_gpt":0.2217725272818074,"score_spread":0.20827682776035417,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2002697935","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99769324,0.0005360633,0.0010473432,0.00003985419,0.000012721228,0.0000068385452,0.000054959713,0.000031597094,0.0005773973],"genre_scores_gemma":[0.9990828,0.00018338476,0.0005190203,0.000011755325,0.000004134141,0.000004386574,0.00003313935,0.000008590642,0.00015276701],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99959224,0.00007510856,0.000021611264,0.000099957586,0.0001545163,0.0000565776],"domain_scores_gemma":[0.99898297,0.00069319544,0.00012480916,0.000039265225,0.000120269564,0.000039510287],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00034229946,0.0005261726,0.00029008338,0.000358273,0.0002668725,0.00041514754,0.0003389258,0.0006196222,0.00063693133],"category_scores_gemma":[0.0011875785,0.0001884534,0.00022273936,0.00024018902,0.00037091342,0.0002590866,0.00018492663,0.00020566335,0.000117358984],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00044470708,0.000090393056,0.003985302,0.00014889927,0.000047513156,0.00045415893,0.00008658769,0.017150357,0.9710144,0.00033854396,0.00007206742,0.006167108],"study_design_scores_gemma":[0.000019404419,0.00068813533,0.010626136,0.000025266147,0.00005066178,0.00013971914,0.00005003046,0.04466411,0.9432322,0.000093588635,0.0003785055,0.00003220744],"about_ca_topic_score_codex":0.0021529908,"about_ca_topic_score_gemma":0.0030460258,"teacher_disagreement_score":0.0021529908,"about_ca_system_score_codex":0.0006263977,"about_ca_system_score_gemma":0.00019394353,"threshold_uncertainty_score":0.004544854},"labels":[],"label_agreement":null},{"id":"W2005497621","doi":"10.1088/0957-4484/23/41/415201","title":"Electron states in a silicon nanowire in the presence of surface potential and field","year":2012,"lang":"en","type":"article","venue":"Nanotechnology","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":4,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McMaster University; University of Toronto; Sunnybrook Health Science Centre","funders":"Pohang University of Science and Technology; Canada Research Chairs","keywords":"Nanowire; Materials science; Electric field; Electron; Silicon; Condensed matter physics; Surface states; Biasing; Field effect; Surface (topology); Atomic physics; Optoelectronics; Voltage; Physics; Quantum mechanics","score_opus":0.007682914300175644,"score_gpt":0.23147425393689877,"score_spread":0.22379133963672312,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2005497621","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9583492,0.00040863088,0.024274973,0.00022239865,0.000038631246,0.000010947262,0.00005701732,0.00004537614,0.016592765],"genre_scores_gemma":[0.9939452,0.00023846728,0.0031596047,0.000028502269,0.000008090041,0.000014335695,0.00005472683,0.000017014741,0.0025340896],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99991524,0.000012181284,0.000002744266,0.000007604149,0.000034504832,0.00002780994],"domain_scores_gemma":[0.99985266,0.000081597245,0.000013679513,0.000011586181,0.000028009843,0.000012431806],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00020255292,0.00025107808,0.00044410894,0.00042308727,0.0004243744,0.00077114993,0.00036598998,0.0006883627,0.001501913],"category_scores_gemma":[0.00043148568,0.00022444974,0.00032830215,0.00035121033,0.0006848126,0.00086290867,0.00031866148,0.00026363868,0.00018882967],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00034139914,0.00010780852,0.003823837,0.00026661978,0.000080753474,0.0018972091,0.00024085943,0.74163944,0.09272265,0.14638273,0.00058021967,0.01191637],"study_design_scores_gemma":[0.000057583657,0.0000989203,0.0012960803,0.000021704782,0.000028097695,0.00017566839,0.00014730735,0.9660543,0.013646935,0.01723083,0.0012162034,0.000026330426],"about_ca_topic_score_codex":0.0014466702,"about_ca_topic_score_gemma":0.001938108,"teacher_disagreement_score":0.001501913,"about_ca_system_score_codex":0.00050866435,"about_ca_system_score_gemma":0.0005466281,"threshold_uncertainty_score":0.005024433},"labels":[],"label_agreement":null},{"id":"W2005639145","doi":"10.1063/1.3264629","title":"High-field hole transport in silicon nanowires","year":2009,"lang":"en","type":"article","venue":"Journal of Applied Physics","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":16,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Université de Montréal","funders":"National Institute of Standards and Technology; Texas A and M University; National Science Foundation","keywords":"Nanowire; Silicon; Condensed matter physics; Phonon; Scattering; Mean free path; Drift velocity; Materials science; Monte Carlo method; Electron mobility; Electric field; Phonon scattering; Physics; Optoelectronics; Optics","score_opus":0.01087207708199325,"score_gpt":0.22336003852350617,"score_spread":0.2124879614415129,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2005639145","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9923503,0.00007945276,0.0044329925,0.0001132731,0.000013070089,0.000012814186,0.00006322914,0.000038352533,0.002896552],"genre_scores_gemma":[0.9972295,0.00006352258,0.0018108338,0.0000222352,0.0000079750225,0.000023225966,0.00006665342,0.000013734237,0.00076235464],"study_design_codex":"simulation_or_modeling","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998851,0.00003131412,0.0000028799057,0.000014464258,0.000030529452,0.000035774603],"domain_scores_gemma":[0.9995617,0.00027328407,0.000033734155,0.000022722876,0.000068851485,0.000039701004],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00041589933,0.0002949352,0.00054613774,0.00039382704,0.000649118,0.000657081,0.000611979,0.0007745067,0.0012831436],"category_scores_gemma":[0.0010907166,0.00029098586,0.00034556782,0.00039272665,0.0007489524,0.00067342544,0.00039387023,0.00039568456,0.00009836675],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00010512239,0.000099318044,0.0014099526,0.000033695782,0.0000214277,0.00015419163,0.000057336612,0.98814976,0.005368174,0.0029862036,0.00016194613,0.001452828],"study_design_scores_gemma":[0.000022749451,0.000036046575,0.00032573086,0.0000021459039,0.000004103699,0.000006929482,0.000013178545,0.99783844,0.0012302995,0.00043360528,0.00008213992,0.0000045863753],"about_ca_topic_score_codex":0.007459599,"about_ca_topic_score_gemma":0.0046958397,"teacher_disagreement_score":0.007459599,"about_ca_system_score_codex":0.0009805639,"about_ca_system_score_gemma":0.00070201687,"threshold_uncertainty_score":0.014832377},"labels":[],"label_agreement":null},{"id":"W2005779482","doi":"10.1109/cicc.2012.6330656","title":"Advanced IC technologies I","year":2012,"lang":"en","type":"article","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Advanced Micro Devices (Canada)","funders":"","keywords":"Session (web analytics); CMOS; Reliability (semiconductor); Silicon on insulator; Computer science; Electrical engineering; Logic gate; Power (physics); Electronic engineering; Engineering; Materials science; Optoelectronics; Silicon; Physics; World Wide Web","score_opus":0.013001086508735708,"score_gpt":0.2215523313166357,"score_spread":0.2085512448079,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2005779482","genre_codex":"other","genre_gemma":"review","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"review","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.004161692,0.09565139,0.02820235,0.009523973,0.031303946,0.00024206215,0.0006933237,0.0017461767,0.82847506],"genre_scores_gemma":[0.03446684,0.066160716,0.014884674,0.005004883,0.010342998,0.00019146176,0.000986248,0.00046111972,0.8675012],"study_design_codex":"not_applicable","study_design_gemma":"not_applicable","domain_scores_codex":[0.9992518,0.000051936982,0.000024375828,0.000111998204,0.00046334037,0.0000964387],"domain_scores_gemma":[0.9992724,0.00008974305,0.000027036178,0.00010370839,0.0003995029,0.00010753629],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00065098866,0.0011858881,0.000527627,0.0012518467,0.0007612065,0.0036566104,0.0011162482,0.0017719108,0.10235905],"category_scores_gemma":[0.0012743548,0.00042073725,0.0006361867,0.0008844803,0.00041453616,0.002153535,0.0012653213,0.0025198427,0.07307385],"study_design_candidate":"not_applicable","study_design_consensus":"not_applicable","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000111098394,0.00008772344,0.00033281223,0.0008127416,0.000029667532,0.00025496777,0.00013298055,0.0009780726,0.028953124,0.035128344,0.49913254,0.434046],"study_design_scores_gemma":[0.0000062610916,0.000059481532,0.00023486665,0.00011454206,0.000007901065,0.00032893478,0.000033678807,0.00040686975,0.0039562527,0.004713856,0.9901265,0.000010944495],"about_ca_topic_score_codex":0.00036296254,"about_ca_topic_score_gemma":0.00051704247,"teacher_disagreement_score":0.10235905,"about_ca_system_score_codex":0.001078304,"about_ca_system_score_gemma":0.0008239253,"threshold_uncertainty_score":0.34242517},"labels":[],"label_agreement":null},{"id":"W2006411149","doi":"10.4028/www.scientific.net/ddf.258-260.510","title":"Process-Induced Diffusion Phenomena in Advanced CMOS Technologies","year":2006,"lang":"en","type":"article","venue":"Defect and diffusion forum/Diffusion and defect data, solid state data. Part A, Defect and diffusion forum","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":3,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Infineon Technologies (Canada)","funders":"","keywords":"Dopant Activation; Dopant; Materials science; Silicon; Transistor; Boron; Annealing (glass); CMOS; Engineering physics; Scaling; Optoelectronics; Nanotechnology; Diffusion; Diffusion process; Computer science; Electrical engineering; Doping; Engineering; Chemistry; Metallurgy; Physics; Thermodynamics","score_opus":0.020492768319548972,"score_gpt":0.2711271268265983,"score_spread":0.2506343585070493,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2006411149","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.2774174,0.04829031,0.6203595,0.0021981709,0.00065216573,0.00018848313,0.00044074407,0.0017354147,0.048717882],"genre_scores_gemma":[0.9551443,0.013231876,0.022372682,0.00014662655,0.00014360867,0.00007223529,0.00013006707,0.00009336306,0.008665239],"study_design_codex":"theoretical_or_conceptual","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998611,0.000021484122,0.0000061506275,0.000020854626,0.00007843038,0.000011837748],"domain_scores_gemma":[0.9998559,0.00007574418,0.000022865685,0.000017950375,0.000020928474,0.000006494688],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00024615586,0.00025638164,0.00023558822,0.00025579613,0.00023116502,0.00051681144,0.00037827442,0.0006025878,0.0010458456],"category_scores_gemma":[0.0007707999,0.00026869515,0.00021656594,0.00035741142,0.00058847026,0.0009168722,0.00032495713,0.0004846728,0.0002366463],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00021033728,0.00014247614,0.002100226,0.00097168254,0.0000563081,0.0013777434,0.00042429817,0.3135697,0.15107243,0.44239166,0.0047142827,0.0829688],"study_design_scores_gemma":[0.00013333715,0.00024259361,0.001991818,0.00009352363,0.000043444394,0.0010506028,0.00007578174,0.6863819,0.038128532,0.22226118,0.049519572,0.000077702956],"about_ca_topic_score_codex":0.0007690885,"about_ca_topic_score_gemma":0.0004883454,"teacher_disagreement_score":0.0010458456,"about_ca_system_score_codex":0.00046115703,"about_ca_system_score_gemma":0.00030867866,"threshold_uncertainty_score":0.003498733},"labels":[],"label_agreement":null},{"id":"W2008397506","doi":"10.1142/s0219581x04001948","title":"FIELD-EFFECT TRANSISTOR STRUCTURES WITH QUASI-ONE-DIMENSIONAL CHANNEL","year":2004,"lang":"en","type":"article","venue":"International Journal of Nanoscience","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Toronto","funders":"","keywords":"Materials science; Transistor; Field-effect transistor; Nanowire; Planar; Charge density; Semiconductor; Diffusion; Channel (broadcasting); Field (mathematics); Condensed matter physics; Charge (physics); Optoelectronics; Physics; Quantum mechanics; Voltage; Electrical engineering","score_opus":0.010505917277022086,"score_gpt":0.24116815673346825,"score_spread":0.23066223945644618,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2008397506","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.5690024,0.006381378,0.38485053,0.0014936322,0.00094957155,0.0003155153,0.0012725705,0.0010214724,0.034712974],"genre_scores_gemma":[0.92603445,0.0018977702,0.06381293,0.00014230105,0.00013615692,0.0002879428,0.00029812125,0.000035916706,0.0073544127],"study_design_codex":"theoretical_or_conceptual","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999249,0.000017847451,0.0000047012377,0.00001510987,0.000022426018,0.00001511196],"domain_scores_gemma":[0.9998851,0.000042562515,0.000016615457,0.000023349105,0.000019421697,0.000012998523],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00018935815,0.0004002166,0.00061715354,0.00032173944,0.00047496066,0.00061548536,0.0010172379,0.0008188215,0.0013219694],"category_scores_gemma":[0.00021511261,0.00017166809,0.00044540435,0.0003524934,0.00048347955,0.00074181514,0.00027811475,0.00046067286,0.0003307242],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00015287648,0.0002186349,0.0009331607,0.00048424624,0.000110082576,0.001131516,0.00023721979,0.25194442,0.14842524,0.57926637,0.0035816613,0.013514618],"study_design_scores_gemma":[0.000037287795,0.00016482364,0.00046274756,0.000021731243,0.00002628039,0.00028750248,0.000024311277,0.94827443,0.0056389435,0.041227765,0.0038061421,0.000028043927],"about_ca_topic_score_codex":0.00082058366,"about_ca_topic_score_gemma":0.0013716194,"teacher_disagreement_score":0.0013219694,"about_ca_system_score_codex":0.0007358796,"about_ca_system_score_gemma":0.0004580727,"threshold_uncertainty_score":0.0053392053},"labels":[],"label_agreement":null},{"id":"W2009029168","doi":"10.1557/proc-686-a2.5","title":"Integration Challenges for Double-Gate MOSFET Technologies","year":2001,"lang":"en","type":"article","venue":"MRS Proceedings","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":6,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Advanced Micro Devices (Canada)","funders":"","keywords":"Materials science; MOSFET; Transistor; Scaling; Optoelectronics; Channel (broadcasting); Realization (probability); Wafer; Metal gate; Nanotechnology; Process (computing); NAND gate; Logic gate; Electronic engineering; Computer science; Electrical engineering; Gate oxide; Engineering; Voltage","score_opus":0.04888812130441485,"score_gpt":0.25889978544806,"score_spread":0.2100116641436452,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2009029168","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.42296124,0.09915103,0.30953372,0.03314601,0.005751981,0.00027329632,0.0008458263,0.0024210426,0.12591586],"genre_scores_gemma":[0.78980815,0.02973132,0.13804974,0.0038082271,0.0016444701,0.00019964647,0.0007415977,0.00041218576,0.035604574],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9995567,0.000033463395,0.00001710829,0.0000557025,0.00024918435,0.00008779478],"domain_scores_gemma":[0.99941397,0.0001394718,0.000035964244,0.00004998096,0.00029066033,0.000069923866],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0011819669,0.00036162435,0.0007997436,0.00028387932,0.0006383163,0.0026454157,0.0013754475,0.0016972813,0.0053126486],"category_scores_gemma":[0.0012777707,0.00038457007,0.000398069,0.00039203858,0.00032840733,0.00305169,0.0011355971,0.0011344029,0.0019098413],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0003710357,0.0002564297,0.002805178,0.001375984,0.00012955119,0.0011259844,0.0009483282,0.009832762,0.41984984,0.14820115,0.035574585,0.3795292],"study_design_scores_gemma":[0.00012260448,0.0014120097,0.004682971,0.0005667293,0.00024095204,0.0045673046,0.0018584579,0.076848425,0.14289212,0.14534171,0.6213377,0.00012904419],"about_ca_topic_score_codex":0.0006536797,"about_ca_topic_score_gemma":0.0019243751,"teacher_disagreement_score":0.0053126486,"about_ca_system_score_codex":0.00078173063,"about_ca_system_score_gemma":0.00081501255,"threshold_uncertainty_score":0.017772615},"labels":[],"label_agreement":null},{"id":"W2009623431","doi":"10.1109/isqed.2015.7085492","title":"Cells reconfiguration around defects in CMOS/nanofabric circuits using simulated evolution heuristic","year":2015,"lang":"en","type":"article","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":3,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of British Columbia","funders":"","keywords":"CMOS; Control reconfiguration; Electronic circuit; Computer science; Electronic engineering; Transistor; Heuristic; Integrated circuit; Flexibility (engineering); Logic gate; Embedded system; Electrical engineering; Engineering; Voltage","score_opus":0.048989307507676015,"score_gpt":0.25496411749914216,"score_spread":0.20597480999146614,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2009623431","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.5307342,0.00071487925,0.45730758,0.00037426697,0.000046171084,0.00017805326,0.000121141005,0.0006688967,0.009854897],"genre_scores_gemma":[0.9137349,0.00012646486,0.08442522,0.00006316713,0.000008723862,0.00011772689,0.00010983623,0.000034311357,0.0013796148],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99986064,0.000038855873,0.000005907624,0.000023223287,0.00003527424,0.000035964742],"domain_scores_gemma":[0.99964964,0.00020170839,0.00005833885,0.000020891297,0.000040625986,0.000028697797],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0003147079,0.0005095109,0.0005376696,0.00056678307,0.0003192535,0.00042763268,0.0007639676,0.0006237027,0.0009798174],"category_scores_gemma":[0.00063693715,0.00033515008,0.0005904011,0.00033190963,0.00046776724,0.00029172195,0.00042735413,0.000338649,0.00007329376],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000028239581,0.00002181599,0.0004278096,0.000018221528,0.000014515226,0.000048569334,0.000020909583,0.989202,0.0017446068,0.001115772,0.000114287446,0.007243163],"study_design_scores_gemma":[0.000011619003,0.000024171575,0.00006296233,0.0000019939457,0.0000061720366,0.000009759003,0.0000076774595,0.99872845,0.0005417045,0.00043568236,0.00016812644,0.0000017059059],"about_ca_topic_score_codex":0.0055523543,"about_ca_topic_score_gemma":0.0049951505,"teacher_disagreement_score":0.0055523543,"about_ca_system_score_codex":0.00085615757,"about_ca_system_score_gemma":0.00070851884,"threshold_uncertainty_score":0.0110400915},"labels":[],"label_agreement":null},{"id":"W2013509200","doi":"10.1007/s11664-002-0032-8","title":"Process optimization of polymetal (W/WN/Polysilicon) gate and its impact on dynamic random-access memory chip performance in 0.14-µm technology","year":2002,"lang":"en","type":"article","venue":"Journal of Electronic Materials","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":4,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Simon Fraser University","funders":"","keywords":"Dram; Dynamic random-access memory; Materials science; Optoelectronics; SIGNAL (programming language); Process (computing); Tungsten; Interface (matter); Diffusion; Computer science; Electronic engineering; Computer hardware; Semiconductor memory; Physics; Engineering; Composite material; Metallurgy","score_opus":0.008045562530576261,"score_gpt":0.2593503948685521,"score_spread":0.25130483233797585,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2013509200","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99652416,0.0005792922,0.0014462651,0.00007926266,0.000026980779,0.000008588194,0.00009497741,0.000074590724,0.0011659076],"genre_scores_gemma":[0.9978855,0.0002545792,0.0009856494,0.000017090604,0.000008523582,0.0000064155442,0.00007619203,0.000024827963,0.0007412038],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99990547,0.000007858843,0.000005474623,0.000026929389,0.000024585588,0.000029721821],"domain_scores_gemma":[0.9998191,0.00004629709,0.00007325156,0.000010067216,0.000033133805,0.000018179773],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00016140769,0.0002980684,0.00021843775,0.00019054428,0.0002035102,0.0004173506,0.0003582532,0.00023044586,0.0010171875],"category_scores_gemma":[0.00029878854,0.00018594241,0.00013163492,0.00026595528,0.00013492495,0.0003884177,0.00017065184,0.0001755334,0.00021454747],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00046493538,0.00009554007,0.0012506128,0.00013471895,0.000028950417,0.00015603368,0.00006300671,0.00579492,0.98467535,0.00070292276,0.00034916424,0.0062837186],"study_design_scores_gemma":[0.000035780144,0.0007354405,0.002504832,0.000007911452,0.000046189383,0.00008920268,0.00003876848,0.017784487,0.9775348,0.00014041917,0.0010682326,0.00001397526],"about_ca_topic_score_codex":0.0010121106,"about_ca_topic_score_gemma":0.003143459,"teacher_disagreement_score":0.0010171875,"about_ca_system_score_codex":0.0004890649,"about_ca_system_score_gemma":0.00041065295,"threshold_uncertainty_score":0.003548503},"labels":[],"label_agreement":null},{"id":"W2019542427","doi":"10.1109/ccece.2012.6334980","title":"Small-signal time-domain physical/electrical fet modeling approach","year":2012,"lang":"en","type":"article","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Ottawa","funders":"","keywords":"Computer science; SIGNAL (programming language); Time domain; Electronic engineering; Electrical engineering; Engineering","score_opus":0.0327383992752466,"score_gpt":0.22503530414280803,"score_spread":0.19229690486756143,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2019542427","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.00387548,0.00018342979,0.9914765,0.000095057985,0.00003804563,0.000037510585,0.000110245535,0.0004893681,0.003694292],"genre_scores_gemma":[0.67430663,0.001916316,0.30389827,0.00033258367,0.00019402099,0.00048650923,0.00078227784,0.00038089073,0.017702458],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99980026,0.0000335677,0.000009572798,0.00004143564,0.00010248291,0.000012732821],"domain_scores_gemma":[0.99976057,0.00007627829,0.00002487784,0.000048802412,0.00008310387,0.0000064011665],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00023435068,0.00086767547,0.00047563735,0.00041050932,0.00024894398,0.0006294445,0.0015166223,0.0009716141,0.0026522356],"category_scores_gemma":[0.000676475,0.00030197017,0.0007261176,0.0002994196,0.00033265597,0.0013840741,0.0003142806,0.0008373237,0.0014876456],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00007363222,0.000060461964,0.00044823685,0.00023393286,0.000081648366,0.00026305218,0.000084962354,0.8215319,0.08566348,0.04376432,0.0019643116,0.04582998],"study_design_scores_gemma":[0.0000027799351,0.000023823863,0.000052830757,0.000004847008,0.000010286601,0.000048676335,0.0000043572572,0.99102294,0.0045384513,0.002179242,0.0021068584,0.000004874576],"about_ca_topic_score_codex":0.0014840206,"about_ca_topic_score_gemma":0.0013356456,"teacher_disagreement_score":0.0026522356,"about_ca_system_score_codex":0.00044214787,"about_ca_system_score_gemma":0.0004365911,"threshold_uncertainty_score":0.008872569},"labels":[],"label_agreement":null},{"id":"W2024169750","doi":"10.1143/apex.4.021302","title":"Linewidth of Low-Field Electrically Detected Magnetic Resonance of Phosphorus in Isotopically Controlled Silicon","year":2011,"lang":"en","type":"article","venue":"Applied Physics Express","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":9,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Simon Fraser University","funders":"Engineering and Physical Sciences Research Council","keywords":"Electron paramagnetic resonance; Laser linewidth; Spins; Pulsed EPR; Paramagnetism; Silicon; Electron; Recombination; Electron nuclear double resonance; Phosphorus; Chemistry; Spin (aerodynamics); Resonance (particle physics); Semiconductor; Magnetic field; Atomic physics; Materials science; Nuclear magnetic resonance; Condensed matter physics; Spin echo; Optoelectronics; Magnetic resonance imaging; Physics; Optics","score_opus":0.010742917123907335,"score_gpt":0.19791132153552743,"score_spread":0.18716840441162008,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2024169750","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99302095,0.00022879535,0.0052849855,0.00005670702,0.000011756789,0.0000051152483,0.000060497725,0.00006553727,0.0012656813],"genre_scores_gemma":[0.99806327,0.000078381316,0.0012168803,0.000027021084,0.0000053406343,0.0000062583913,0.00008743033,0.00001440855,0.00050087],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998447,0.000034852084,0.000006165114,0.000042514384,0.00005388034,0.000017867647],"domain_scores_gemma":[0.99940336,0.00034142868,0.000079237805,0.000048270125,0.00009145116,0.000036162794],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00030077575,0.0001332504,0.00014192509,0.00018215025,0.00010022109,0.00015647619,0.00035927753,0.00040202524,0.001008725],"category_scores_gemma":[0.0008602906,0.00009564438,0.00007195181,0.00010972924,0.0003173741,0.00025082758,0.00013049004,0.00040388005,0.0001556503],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00014697954,0.00001744083,0.0004497889,0.0000250591,0.0000045251,0.000044306733,0.00005424848,0.00018630078,0.9965823,0.00013790303,0.000035729827,0.0023154926],"study_design_scores_gemma":[0.000027330952,0.00021296424,0.0044536614,0.000008796767,0.000010545315,0.00014017001,0.000050701332,0.0031358066,0.9913123,0.00009639883,0.00054251787,0.000008893893],"about_ca_topic_score_codex":0.00021753923,"about_ca_topic_score_gemma":0.0002577996,"teacher_disagreement_score":0.001008725,"about_ca_system_score_codex":0.00015148212,"about_ca_system_score_gemma":0.00007686391,"threshold_uncertainty_score":0.003374517},"labels":[],"label_agreement":null},{"id":"W2025493844","doi":"10.1063/1.2177367","title":"Silicon-on-insulator control impact-ionization-avalanche transistor","year":2006,"lang":"en","type":"article","venue":"Applied Physics Letters","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":3,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Concordia University","funders":"","keywords":"Impact ionization; Transconductance; Optoelectronics; Avalanche breakdown; Avalanche diode; Ionization; Materials science; Transistor; Silicon on insulator; Silicon; Field-effect transistor; Single-photon avalanche diode; Electric field; Electrical engineering; Avalanche photodiode; Physics; Breakdown voltage; Optics; Voltage; Engineering","score_opus":0.006500782668662877,"score_gpt":0.19905637652568894,"score_spread":0.19255559385702606,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2025493844","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.83190507,0.0016820888,0.14347528,0.00032849144,0.00015280205,0.00012167243,0.00039475743,0.0008123638,0.021127537],"genre_scores_gemma":[0.9870445,0.00022653629,0.011352537,0.000034442346,0.000016817488,0.000015370098,0.00006860491,0.000007265993,0.0012340003],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.999949,0.0000033277818,0.0000037721297,0.00001195864,0.000022794982,0.000009172646],"domain_scores_gemma":[0.999938,0.000025215737,0.000012261692,0.0000059071126,0.00001100548,0.000007667297],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0000868959,0.00020149347,0.00014824246,0.00012463007,0.0001545827,0.0003499308,0.00048673208,0.00024252078,0.0009033056],"category_scores_gemma":[0.00021212488,0.00007030574,0.00011579295,0.00013276187,0.00020163799,0.00029436607,0.00014417722,0.00019673617,0.00017761147],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00008966868,0.000045434248,0.00079007196,0.0001135101,0.000020339365,0.00019980187,0.00006462363,0.0041314955,0.96155435,0.010756343,0.00045753032,0.021776928],"study_design_scores_gemma":[0.000074459866,0.00067782425,0.0039152857,0.00002141963,0.000054219337,0.0010106064,0.000046802128,0.10754073,0.8673438,0.0051250784,0.014155932,0.00003395455],"about_ca_topic_score_codex":0.0002739953,"about_ca_topic_score_gemma":0.0005800931,"teacher_disagreement_score":0.0009033056,"about_ca_system_score_codex":0.00022178362,"about_ca_system_score_gemma":0.00013609538,"threshold_uncertainty_score":0.003021896},"labels":[],"label_agreement":null},{"id":"W2030629033","doi":"10.1109/icmts.2007.374498","title":"Extraction of Self-Heating Free I-V Curves Including the Substrate Current of PD SOI MOSFETs","year":2007,"lang":"en","type":"article","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":10,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Advanced Micro Devices (Canada)","funders":"","keywords":"Spice; Silicon on insulator; Materials science; Extraction (chemistry); Substrate (aquarium); MOSFET; Electronic engineering; Optoelectronics; Temperature measurement; Electrical engineering; Silicon; Transistor; Physics; Engineering; Chemistry; Voltage; Thermodynamics","score_opus":0.03792548498698221,"score_gpt":0.30132907780671925,"score_spread":0.263403592819737,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2030629033","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.2659345,0.00070189155,0.7169256,0.00014628138,0.00007974157,0.00017167538,0.0011256271,0.004747739,0.010167007],"genre_scores_gemma":[0.92338276,0.00051842537,0.071658,0.00004587907,0.00002036283,0.00012300871,0.0006478745,0.00031622162,0.0032875165],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99985003,0.000011196223,0.0000075504768,0.000029048657,0.00008776495,0.0000144766955],"domain_scores_gemma":[0.9997279,0.0000646557,0.00004007709,0.00008361773,0.00007274672,0.000011088896],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0001380894,0.00063359895,0.00043840506,0.00083547155,0.00019917553,0.00041741945,0.0007783953,0.0003832169,0.00093939685],"category_scores_gemma":[0.0007172809,0.000324421,0.00028817973,0.00049079774,0.00025257582,0.00062138156,0.0002794317,0.00042353861,0.00043655862],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00007543284,0.00004642237,0.0014260266,0.00024323398,0.00005528087,0.00017754473,0.0002789492,0.021921065,0.90564156,0.0050435266,0.0009438296,0.06414711],"study_design_scores_gemma":[0.000011069529,0.00012193013,0.0044294717,0.000026315978,0.00003450804,0.00044313032,0.000060910756,0.16312815,0.82067484,0.0035134621,0.007510085,0.00004617585],"about_ca_topic_score_codex":0.0004805001,"about_ca_topic_score_gemma":0.00086883333,"teacher_disagreement_score":0.00093939685,"about_ca_system_score_codex":0.00029948354,"about_ca_system_score_gemma":0.00027977265,"threshold_uncertainty_score":0.0031425953},"labels":[],"label_agreement":null},{"id":"W2032888474","doi":"10.1109/tvlsi.2014.2334492","title":"New Analytic Model of Coupling and Substrate Capacitance in Nanometer Technologies","year":2014,"lang":"en","type":"article","venue":"IEEE Transactions on Very Large Scale Integration (VLSI) Systems","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":31,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Memorial University of Newfoundland","funders":"Canada Foundation for Innovation","keywords":"Capacitance; Computation; Nanometre; Coupling (piping); Electronic engineering; CMOS; Computer science; Substrate (aquarium); Integrated circuit; Substrate coupling; Algorithm; Computational science; Materials science; Optoelectronics; Engineering; Physics; Nanotechnology; Layer (electronics)","score_opus":0.017674607027469088,"score_gpt":0.2188560039933465,"score_spread":0.20118139696587742,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2032888474","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.011547893,0.00046588876,0.98213285,0.0001384114,0.00004084739,0.000034028842,0.00008802328,0.00039610194,0.0051559964],"genre_scores_gemma":[0.74484605,0.0020499954,0.24135005,0.00028842196,0.000089571884,0.00029313887,0.00029052884,0.00029987647,0.010492412],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9996877,0.00004893984,0.000011436834,0.000059622264,0.00015657581,0.000035763347],"domain_scores_gemma":[0.99982977,0.00006182287,0.000025421203,0.000028807286,0.00004528056,0.000008880748],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00025260568,0.000628897,0.0004426263,0.0006364077,0.00027856507,0.0005822911,0.0015352294,0.0010820142,0.0019132139],"category_scores_gemma":[0.0011191448,0.00031819878,0.0005312306,0.0007396907,0.00033802117,0.0019159792,0.00033452312,0.0006506615,0.000663103],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000021860544,0.0000363345,0.00062613055,0.00012381616,0.000035689063,0.00031549134,0.0001249751,0.83419305,0.045738958,0.09033856,0.0015135412,0.026931494],"study_design_scores_gemma":[0.000002047516,0.000009606858,0.000070582675,0.000003223383,0.0000045599704,0.00006200823,0.0000058922396,0.99381894,0.001213755,0.0035181672,0.0012862191,0.000004901712],"about_ca_topic_score_codex":0.0025724971,"about_ca_topic_score_gemma":0.0021069741,"teacher_disagreement_score":0.0025724971,"about_ca_system_score_codex":0.00087670144,"about_ca_system_score_gemma":0.00071348116,"threshold_uncertainty_score":0.0064003468},"labels":[],"label_agreement":null},{"id":"W2033705632","doi":"10.1016/j.sse.2004.05.047","title":"Self-heating in multi-emitter SiGe HBTs","year":2004,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":11,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Institute for Microstructural Sciences","funders":"","keywords":"Common emitter; Materials science; Optoelectronics; Heterojunction bipolar transistor; Bipolar junction transistor; Biasing; Transistor; Heterostructure-emitter bipolar transistor; Thermal; Coupling (piping); Voltage; Electrical engineering; Physics; Composite material","score_opus":0.01411969736616136,"score_gpt":0.2599645760410089,"score_spread":0.24584487867484756,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2033705632","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99010146,0.00052148657,0.0049630716,0.000063162435,0.000021480508,0.0000048187526,0.000017068556,0.00010233616,0.004205164],"genre_scores_gemma":[0.9980057,0.000046886333,0.00027605792,0.000005885462,0.000004398232,0.0000017977706,0.0000085400125,0.0000093348135,0.0016414371],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99995494,0.000005208405,0.0000014323347,0.000008200116,0.000013917111,0.00001623967],"domain_scores_gemma":[0.99986637,0.00006690976,0.000015403853,0.000020437486,0.000018600487,0.000012259655],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000110317924,0.000084390565,0.00014631948,0.00017711865,0.00024587297,0.00029055533,0.00025628068,0.00016035412,0.0017025726],"category_scores_gemma":[0.00027603604,0.00013073177,0.0001232557,0.00012204302,0.00036280084,0.00037073914,0.00027954893,0.00016407591,0.0002261513],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00043578394,0.00009693761,0.004281514,0.00010018505,0.000028060114,0.0005084169,0.00046371593,0.02078546,0.9472152,0.009378874,0.0005914789,0.01611433],"study_design_scores_gemma":[0.00002435184,0.00022913197,0.014490524,0.000017951932,0.000032251322,0.0005717755,0.0002682045,0.16206795,0.8158726,0.0030118127,0.0033924424,0.00002100856],"about_ca_topic_score_codex":0.00032017767,"about_ca_topic_score_gemma":0.00047893185,"teacher_disagreement_score":0.0017025726,"about_ca_system_score_codex":0.00026205461,"about_ca_system_score_gemma":0.00009294718,"threshold_uncertainty_score":0.0056957006},"labels":[],"label_agreement":null},{"id":"W2035939831","doi":"10.1016/s0735-1097(13)60095-9","title":"IMPACT OF REPERFUSION STRATEGY ON ABORTED MYOCARDIAL INFARCTION: INSIGHTS FROM A LARGE CANADIAN STEMI CLINICAL REGISTRY","year":2013,"lang":"en","type":"article","venue":"Journal of the American College of Cardiology","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":true,"ca_institutions":"University of Alberta","funders":"","keywords":"Medicine; Abort; Cardiology; Myocardial infarction; Internal medicine; Reperfusion therapy; Reperfusion injury; Ischemia","score_opus":0.018184156844413,"score_gpt":0.28457517867135096,"score_spread":0.26639102182693797,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2035939831","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9682676,0.0029138972,0.00022091164,0.0047020256,0.000059000824,0.00009392254,0.012367499,0.000018659988,0.011356417],"genre_scores_gemma":[0.9911608,0.0018457902,0.00036818147,0.00058098393,0.0000942269,0.00003214907,0.005357696,0.000014730854,0.0005455714],"study_design_codex":"observational","study_design_gemma":"observational","domain_scores_codex":[0.99807894,0.00021306137,0.00012511252,0.0002510467,0.0007318592,0.0005999036],"domain_scores_gemma":[0.9932721,0.00086418726,0.0015252407,0.0003907542,0.0024997087,0.001448089],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.001910426,0.00036326074,0.00069314486,0.0015771413,0.0019101887,0.0019511944,0.0012984216,0.00087608106,0.002061346],"category_scores_gemma":[0.009766217,0.00023711317,0.00080031465,0.0050447797,0.0007237859,0.000609636,0.00089701626,0.001381843,0.00021882298],"study_design_candidate":"observational","study_design_consensus":"observational","about_ca_topic_candidate":true,"about_ca_topic_consensus":true,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00022678588,0.00005387803,0.98689085,0.000033089626,0.0001287045,0.00014459614,0.0003364806,0.00016611723,0.0000988507,0.00043286954,0.0040656687,0.0074221687],"study_design_scores_gemma":[0.000025374937,0.000028660541,0.99721956,0.000030344954,0.00012933389,0.00009266271,0.000545347,0.00030289628,0.000027766962,0.000102199956,0.0014748822,0.000021022763],"about_ca_topic_score_codex":0.9332005,"about_ca_topic_score_gemma":0.975621,"teacher_disagreement_score":0.06679952,"about_ca_system_score_codex":0.013230403,"about_ca_system_score_gemma":0.030113041,"threshold_uncertainty_score":0.13438576},"labels":[],"label_agreement":null},{"id":"W2037152431","doi":"10.1063/1.4773820","title":"Trapped charge dynamics in InAs nanowires","year":2013,"lang":"en","type":"article","venue":"Journal of Applied Physics","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":21,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McMaster University; University of Waterloo","funders":"","keywords":"Nanowire; Trapping; Materials science; Passivation; Noise (video); Conductance; Electron; Condensed matter physics; Transistor; Optoelectronics; Oxide; Coulomb; Coulomb blockade; Quantum tunnelling; Nanotechnology; Voltage; Physics","score_opus":0.011328831990460534,"score_gpt":0.21484500512102755,"score_spread":0.20351617313056702,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2037152431","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99810445,0.0000475274,0.0014340895,0.000024740768,0.0000041007042,0.0000026875769,0.000017998535,0.000023358303,0.00034109372],"genre_scores_gemma":[0.9994497,0.000025909176,0.00028880368,0.000004511198,0.0000024913058,0.0000029428195,0.000018286895,0.000005546699,0.00020187527],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999324,0.000011003803,0.0000030792353,0.000017288809,0.000021374417,0.000014831869],"domain_scores_gemma":[0.99968565,0.00013693365,0.000079981844,0.000028102684,0.000040285537,0.00002904114],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00018576715,0.00018161938,0.00015253937,0.00021506136,0.00022161198,0.00039322046,0.00025682076,0.00022727164,0.0003694468],"category_scores_gemma":[0.0008509382,0.000111014626,0.00011979511,0.00014389717,0.00056259887,0.00046065572,0.00016965516,0.00016435352,0.00006259465],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00067253556,0.0002837212,0.02626645,0.00016990567,0.000135019,0.001683101,0.0010734405,0.19942307,0.7262436,0.033071198,0.0005573484,0.010420607],"study_design_scores_gemma":[0.00004761063,0.00030089813,0.009846631,0.000015033962,0.000028526725,0.000251271,0.00014717225,0.90154773,0.083374105,0.0038652427,0.0005347035,0.000040967378],"about_ca_topic_score_codex":0.0010164105,"about_ca_topic_score_gemma":0.00064938713,"teacher_disagreement_score":0.0010164105,"about_ca_system_score_codex":0.00044201766,"about_ca_system_score_gemma":0.00016617436,"threshold_uncertainty_score":0.003207028},"labels":[],"label_agreement":null},{"id":"W2038087740","doi":"10.1109/jproc.2008.927355","title":"Modeling of Nanoscale Devices","year":2008,"lang":"en","type":"article","venue":"Proceedings of the IEEE","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":325,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Semiclassical physics; Nanowire; Quantum; Non-equilibrium thermodynamics; Ballistic conduction; Physics; Nanoscopic scale; Statistical physics; Nanotechnology; Relaxation (psychology); Quantum mechanics; Materials science; Electron","score_opus":0.02603766590668866,"score_gpt":0.21482747312781958,"score_spread":0.18878980722113092,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2038087740","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.027927013,0.0031708865,0.8115156,0.002758971,0.00054760766,0.00021932244,0.0020064784,0.0011850642,0.15066902],"genre_scores_gemma":[0.69313127,0.0059234486,0.1685658,0.0010304145,0.00053927413,0.0015988622,0.0021301934,0.0007417821,0.12633888],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9997427,0.000048910246,0.000011727538,0.000047717585,0.000112388625,0.000036600442],"domain_scores_gemma":[0.9998636,0.00004730305,0.000018703304,0.000026940232,0.000033074793,0.000010410245],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00022926943,0.0007617913,0.0007670607,0.00046350982,0.0005846003,0.0013050914,0.0017647427,0.002163377,0.0067681386],"category_scores_gemma":[0.00067739113,0.0003498029,0.00087575923,0.00042562198,0.0007638256,0.0019359943,0.0007327156,0.00081961683,0.0014207758],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000022275655,0.000038562473,0.00034880626,0.00017823032,0.000029444383,0.00017754867,0.00009653227,0.56763345,0.006358041,0.41005096,0.005452108,0.009614007],"study_design_scores_gemma":[0.0000085151905,0.000014195497,0.00015718372,0.000017319693,0.000007210674,0.00006678033,0.000015838246,0.9308523,0.00078735,0.04797675,0.020086316,0.0000102737395],"about_ca_topic_score_codex":0.0034351333,"about_ca_topic_score_gemma":0.0022047993,"teacher_disagreement_score":0.0067681386,"about_ca_system_score_codex":0.0010978094,"about_ca_system_score_gemma":0.0007565626,"threshold_uncertainty_score":0.022641659},"labels":[],"label_agreement":null},{"id":"W2041458629","doi":"10.1109/isqed.2008.4479684","title":"Tutorial 1: The Promise of High-k/Metal Gates-From Electronic Transport Phenomena to Emerging Device/Circuit Applications","year":2008,"lang":"en","type":"article","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Advanced Micro Devices (Canada)","funders":"","keywords":"CMOS; Transistor; Logic gate; Metal gate; Electrical engineering; Scalability; Computer science; Materials science; Reliability (semiconductor); Electronic circuit; Nanotechnology; Optoelectronics; Electronic engineering; Engineering physics; Physics; Engineering; Gate oxide; Voltage","score_opus":0.017249776465693954,"score_gpt":0.21811873905943902,"score_spread":0.20086896259374507,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2041458629","genre_codex":"review","genre_gemma":"other","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"other","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.0108115645,0.59700817,0.03864228,0.050188128,0.061059814,0.00012321398,0.00054974656,0.0008321795,0.24078493],"genre_scores_gemma":[0.07408168,0.35930672,0.020835342,0.011867786,0.04949398,0.00011681751,0.00050203974,0.00063939753,0.48315617],"study_design_codex":"not_applicable","study_design_gemma":"not_applicable","domain_scores_codex":[0.9998865,0.0000211235,0.0000034647062,0.000029364464,0.000039386963,0.000020193009],"domain_scores_gemma":[0.9998074,0.000072798175,0.000012938423,0.000007197252,0.000052368443,0.000047293306],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0003261468,0.0008758261,0.00055396435,0.00053020695,0.00076863676,0.002154848,0.0005432643,0.0015404775,0.015800763],"category_scores_gemma":[0.00047327514,0.0002611166,0.0004005242,0.0004139689,0.00062013563,0.002705061,0.0006986706,0.0019405236,0.005530164],"study_design_candidate":"not_applicable","study_design_consensus":"not_applicable","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00018562173,0.00006821626,0.00031386208,0.0018183249,0.00003815151,0.0002858573,0.0003618644,0.0020597945,0.013232931,0.12235822,0.6934711,0.16580611],"study_design_scores_gemma":[0.000010836807,0.00015542569,0.00042506267,0.0004942326,0.000033227327,0.00051615667,0.00018321782,0.0015873801,0.0031449092,0.02972161,0.9636955,0.000032435524],"about_ca_topic_score_codex":0.00046690236,"about_ca_topic_score_gemma":0.0012049845,"teacher_disagreement_score":0.015800763,"about_ca_system_score_codex":0.00068449904,"about_ca_system_score_gemma":0.00037693442,"threshold_uncertainty_score":0.05285883},"labels":[],"label_agreement":null},{"id":"W2049004495","doi":"10.1088/0957-4484/26/8/085204","title":"Axial p–n-junctions in nanowires","year":2015,"lang":"en","type":"article","venue":"Nanotechnology","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":4,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Toronto","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Electric field; Materials science; Condensed matter physics; Nanowire; Electron; Drop (telecommunication); Semiconductor; Diffusion; Voltage; Boundary value problem; Charge carrier; Physics; Nanotechnology; Optoelectronics; Quantum mechanics; Electrical engineering","score_opus":0.029175435584030334,"score_gpt":0.24324901186866824,"score_spread":0.2140735762846379,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2049004495","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.955921,0.00046593702,0.036117956,0.000049787945,0.000016209504,0.000012378093,0.0000631807,0.00007064218,0.007282937],"genre_scores_gemma":[0.9963147,0.0001436592,0.0025953946,0.0000063278253,0.000003224247,0.0000053775207,0.00003040115,0.000005951351,0.0008950478],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999596,0.000005902025,0.0000018998836,0.000010100339,0.000014946208,0.000007550836],"domain_scores_gemma":[0.9999391,0.000017932327,0.000014969566,0.000004132983,0.000017991699,0.00000584213],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00009381261,0.00008257602,0.00007986881,0.0001936237,0.00021195992,0.00029794537,0.00015504415,0.00018832137,0.00036069338],"category_scores_gemma":[0.00027575405,0.000098012446,0.000079043995,0.00017700842,0.0002095184,0.000296845,0.00011475278,0.00012730181,0.00009987392],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00023864194,0.00008195356,0.0076500014,0.00018053778,0.000023708564,0.0009537769,0.00017693616,0.07697716,0.7711796,0.122670166,0.0005878658,0.019279603],"study_design_scores_gemma":[0.000025535932,0.00019907906,0.015734985,0.000024223438,0.000023881003,0.00088966574,0.0001651242,0.71507835,0.22628577,0.036483776,0.005060975,0.000028617986],"about_ca_topic_score_codex":0.00040860754,"about_ca_topic_score_gemma":0.0006298075,"teacher_disagreement_score":0.00040860754,"about_ca_system_score_codex":0.00024185205,"about_ca_system_score_gemma":0.00012657774,"threshold_uncertainty_score":0.0017547011},"labels":[],"label_agreement":null},{"id":"W2051869034","doi":"10.1063/1.3622291","title":"Patterned electrode vertical field effect transistor: Theory and experiment","year":2011,"lang":"en","type":"article","venue":"Journal of Applied Physics","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":78,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"","funders":"Azrieli Foundation; Israel Science Foundation","keywords":"Materials science; Electrode; Transistor; Lithography; Optoelectronics; Voltage; Current (fluid); Field-effect transistor; Channel (broadcasting); Current density; Threshold voltage; Nanotechnology; Electrical engineering; Physics; Engineering","score_opus":0.012506628040035193,"score_gpt":0.22203328650562915,"score_spread":0.20952665846559396,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2051869034","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.7374538,0.0020596217,0.22153744,0.0007648844,0.0001273614,0.00013515944,0.0004918339,0.0007120558,0.03671784],"genre_scores_gemma":[0.96455884,0.00058013544,0.033083793,0.00003375834,0.000018459363,0.0000616769,0.00008225874,0.000016211923,0.0015648534],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99989057,0.000016887992,0.00000321478,0.000023159642,0.000055193446,0.000010949703],"domain_scores_gemma":[0.9998946,0.000062256324,0.000008298175,0.000016744305,0.000013223747,0.000004758756],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00021365337,0.00026616684,0.0002652293,0.00014812943,0.00020625486,0.0004018105,0.00090143475,0.0006681545,0.0016126297],"category_scores_gemma":[0.00043853567,0.00014887951,0.00018078988,0.00016781909,0.00050961995,0.00079484814,0.00021026426,0.0003166687,0.00017752784],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00044022527,0.00027645577,0.002255933,0.00084283866,0.00007428958,0.00092576764,0.00038778267,0.21648309,0.5154269,0.23107693,0.0020764458,0.029733395],"study_design_scores_gemma":[0.000041401177,0.00017141845,0.0008438187,0.000023676495,0.000013415061,0.00011251924,0.00005421532,0.9279109,0.051869564,0.01688262,0.0020512266,0.000025169558],"about_ca_topic_score_codex":0.00048432645,"about_ca_topic_score_gemma":0.00038006148,"teacher_disagreement_score":0.0016126297,"about_ca_system_score_codex":0.00036886873,"about_ca_system_score_gemma":0.0001686907,"threshold_uncertainty_score":0.0053948164},"labels":[],"label_agreement":null},{"id":"W2056127033","doi":"10.1116/1.582177","title":"The temperature dependence of the dc characteristics of silicon germanium bipolar transistors","year":2000,"lang":"en","type":"article","venue":"Journal of Vacuum Science & Technology A Vacuum Surfaces and Films","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":11,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"CMC Microsystems (Canada); Institute for Microstructural Sciences","funders":"","keywords":"Bipolar junction transistor; Transistor; Materials science; Optoelectronics; Germanium; BiCMOS; Common emitter; Amplifier; Silicon; Silicon-germanium; Power semiconductor device; Resistor; Quantum tunnelling; Atmospheric temperature range; Electrical engineering; Context (archaeology); Current (fluid); Semiconductor; Engineering physics; Biasing; Voltage; CMOS; Engineering; Physics","score_opus":0.00564839447522882,"score_gpt":0.20823320783092997,"score_spread":0.20258481335570114,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2056127033","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.98039424,0.0017230517,0.0058043455,0.0002022273,0.00003848626,0.00002718852,0.0010270459,0.00022270453,0.010560675],"genre_scores_gemma":[0.9972524,0.00037965016,0.00070941314,0.000029747744,0.000010802336,0.000008061046,0.00025973812,0.000028901244,0.001321304],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99981564,0.0000083350415,0.000006690442,0.00004260788,0.000078750876,0.000047993173],"domain_scores_gemma":[0.99925464,0.00024891787,0.000089879955,0.00007373994,0.00029253933,0.00004022165],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00011123779,0.00020493967,0.00016556135,0.0003183223,0.0001492031,0.00038039894,0.00020070483,0.00025835176,0.0015076194],"category_scores_gemma":[0.0008392232,0.00015951111,0.00009965606,0.00038314602,0.00025968507,0.00032248753,0.00014984026,0.00040592148,0.0008085881],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00019418159,0.00003164409,0.0040944656,0.000078554454,0.000018382876,0.00016370327,0.00019697989,0.0017133426,0.9859264,0.00075249124,0.00037330718,0.0064565884],"study_design_scores_gemma":[0.000016909777,0.0004034086,0.03778768,0.000024942217,0.00004635433,0.0007803897,0.00011011394,0.010273105,0.94446045,0.0005358473,0.00552341,0.000037352536],"about_ca_topic_score_codex":0.0012787416,"about_ca_topic_score_gemma":0.0011188878,"teacher_disagreement_score":0.0015076194,"about_ca_system_score_codex":0.0003673918,"about_ca_system_score_gemma":0.00013251018,"threshold_uncertainty_score":0.005043447},"labels":[],"label_agreement":null},{"id":"W2056131263","doi":"10.1143/jjap.44.2680","title":"Two-Dimensional Quantum-Mechanical Modeling and Simulation of Strained-Si Fin Field Effect Transistor (FinFET) on SiGe-On-Insulator","year":2005,"lang":"en","type":"article","venue":"Japanese Journal of Applied Physics","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":2,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"","funders":"University of Alberta","keywords":"Fin; Materials science; Subthreshold swing; Condensed matter physics; Field-effect transistor; Silicon on insulator; MOSFET; Velocity overshoot; Transistor; Drain-induced barrier lowering; Electron mobility; Poisson's equation; Doping; Subthreshold conduction; Optoelectronics; Electron; Physics; Silicon; Composite material; Quantum mechanics; Voltage","score_opus":0.015193328261482975,"score_gpt":0.25305327629048724,"score_spread":0.23785994802900426,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2056131263","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.96492255,0.00013724857,0.019112919,0.0003364621,0.00005249485,0.000052258136,0.00054830674,0.000252564,0.01458529],"genre_scores_gemma":[0.99275523,0.00008949997,0.004276133,0.00005242634,0.000010719853,0.00007802262,0.00024617315,0.00002739481,0.002464359],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9999027,0.000023696555,0.0000042545303,0.000014257587,0.000030172894,0.000024876797],"domain_scores_gemma":[0.99971956,0.00014463042,0.00003055734,0.000021809314,0.000051279974,0.000032285356],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0001923927,0.00029353905,0.0005131691,0.00026108924,0.00045541686,0.00050769246,0.00084764167,0.00110291,0.002839075],"category_scores_gemma":[0.0005814861,0.00031975308,0.00057767204,0.00034748195,0.00052277517,0.00050954346,0.00026402203,0.00036000047,0.00017893256],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000030491445,0.00002958166,0.00073189585,0.000023683888,0.00001666034,0.00009483037,0.000026034048,0.9944008,0.0023960187,0.00139216,0.000121173696,0.0007366991],"study_design_scores_gemma":[0.000008744328,0.00001333043,0.00022737813,0.0000011827435,0.000002701694,0.000005326238,0.00000583867,0.99927825,0.00022627642,0.00015561037,0.00007206335,0.0000033109297],"about_ca_topic_score_codex":0.015311538,"about_ca_topic_score_gemma":0.010768723,"teacher_disagreement_score":0.015311538,"about_ca_system_score_codex":0.0008110003,"about_ca_system_score_gemma":0.0008895709,"threshold_uncertainty_score":0.03044486},"labels":[],"label_agreement":null},{"id":"W2060903761","doi":"10.1117/12.461243","title":"Post-NCS Performance of the HST NICMOS","year":2003,"lang":"en","type":"article","venue":"Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":8,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"","funders":"Goddard Space Flight Center; University of Alberta","keywords":"Computer science","score_opus":0.010992392269786933,"score_gpt":0.21385731815009265,"score_spread":0.20286492588030572,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2060903761","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.98192275,0.00007715016,0.0010504415,0.00008431339,0.000027462156,0.00003857859,0.0014231311,0.0005494721,0.014826716],"genre_scores_gemma":[0.98011637,0.0001077209,0.004210345,0.00007610663,0.00002049277,0.000030696443,0.006265811,0.00023199181,0.00894053],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99959797,0.000014200517,0.00000777975,0.000066624154,0.00024867922,0.00006476053],"domain_scores_gemma":[0.9989691,0.0000644046,0.000041140247,0.00009723126,0.0007478004,0.000080449725],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0006370276,0.00026869666,0.00025170535,0.00048667367,0.0007119122,0.0006523121,0.00061576784,0.00018109112,0.0055053043],"category_scores_gemma":[0.0011824133,0.00012281866,0.00015369512,0.000533479,0.00031946358,0.0004972213,0.00057843595,0.00040369623,0.0010236977],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0039153057,0.00047760527,0.16138357,0.0003261072,0.00017499122,0.0010270436,0.0029311427,0.019714283,0.64838403,0.004339947,0.018276121,0.13904984],"study_design_scores_gemma":[0.00012990851,0.0011110557,0.42758492,0.0000409814,0.000098840406,0.00055767846,0.0006662219,0.041211005,0.4671786,0.00048234747,0.060833428,0.00010503159],"about_ca_topic_score_codex":0.04584757,"about_ca_topic_score_gemma":0.06160083,"teacher_disagreement_score":0.04584757,"about_ca_system_score_codex":0.0021352873,"about_ca_system_score_gemma":0.0008882674,"threshold_uncertainty_score":0.09116143},"labels":[],"label_agreement":null},{"id":"W2061148386","doi":"10.1109/newcas.2007.4487994","title":"A new subthreshold leakage model for NMOS transistor stacks","year":2007,"lang":"en","type":"article","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":7,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Royal Military College of Canada","funders":"","keywords":"Subthreshold conduction; Transistor; NMOS logic; Leakage (economics); Spice; Transistor model; MOSFET; Electronic engineering; Computer science; Voltage; Materials science; Electrical engineering; Engineering","score_opus":0.029776977577050383,"score_gpt":0.25705515784163613,"score_spread":0.22727818026458574,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2061148386","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.01640172,0.00042680092,0.9809367,0.000054803815,0.000036314425,0.000027641103,0.00014387556,0.0005178209,0.0014543228],"genre_scores_gemma":[0.81078595,0.0019887304,0.17595196,0.00028217738,0.00010917206,0.00025440627,0.00080555066,0.00032345284,0.009498624],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9997491,0.000033981865,0.000022645612,0.000042628093,0.00012138033,0.000030313815],"domain_scores_gemma":[0.9997656,0.000069385984,0.00003230665,0.00004699509,0.00007729243,0.000008448285],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00026761444,0.00068147335,0.00056634913,0.0005868624,0.00028834463,0.00072684,0.0015045288,0.00070342555,0.0009745149],"category_scores_gemma":[0.0009224824,0.00037093586,0.00097284466,0.00046905517,0.00024335997,0.0020541872,0.00045519613,0.00061913254,0.0005231794],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000066627326,0.000027936714,0.0013263583,0.0001158719,0.0000815204,0.00016363294,0.00008052586,0.89148736,0.050194535,0.012912339,0.0009071761,0.042636085],"study_design_scores_gemma":[0.0000026054713,0.000024384957,0.00016103637,0.000006091143,0.000021368418,0.000054630476,0.0000047836197,0.9918602,0.0047431835,0.0018385506,0.0012756387,0.000007553668],"about_ca_topic_score_codex":0.0025574262,"about_ca_topic_score_gemma":0.0033287688,"teacher_disagreement_score":0.0025574262,"about_ca_system_score_codex":0.00048278368,"about_ca_system_score_gemma":0.00058250595,"threshold_uncertainty_score":0.005085051},"labels":[],"label_agreement":null},{"id":"W2064036300","doi":"10.1103/physrevlett.102.095503","title":"Sufficient Conditions for Thermal Rectification in Hybrid Quantum Structures","year":2009,"lang":"en","type":"article","venue":"Physical Review Letters","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":131,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Toronto","funders":"","keywords":"Rectification; Spins; Formalism (music); Physics; Thermal; Quantum; Topology (electrical circuits); Quantum mechanics; Voltage; Condensed matter physics; Electrical engineering; Thermodynamics","score_opus":0.022355571654077398,"score_gpt":0.3006869963292546,"score_spread":0.2783314246751772,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2064036300","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.61135787,0.0011211402,0.2944769,0.003421264,0.00036609123,0.00027120288,0.0012097233,0.001181681,0.08659413],"genre_scores_gemma":[0.9867047,0.00019116934,0.010246527,0.00014213586,0.00009532963,0.00014943331,0.00030507924,0.00010177482,0.002063924],"study_design_codex":"theoretical_or_conceptual","study_design_gemma":"theoretical_or_conceptual","domain_scores_codex":[0.99911124,0.00015421999,0.00010711232,0.00013343433,0.00024491004,0.0002491396],"domain_scores_gemma":[0.99654657,0.0013656209,0.00060066546,0.00030006317,0.0007773604,0.00040968272],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0015995495,0.0005795283,0.00092226756,0.0014661652,0.0012696547,0.0020539204,0.00120865,0.0022195175,0.009328476],"category_scores_gemma":[0.007504491,0.0006211521,0.0007818755,0.00040955204,0.0021233037,0.0034134248,0.0015512923,0.0018922276,0.0010284538],"study_design_candidate":"theoretical_or_conceptual","study_design_consensus":"theoretical_or_conceptual","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0001555072,0.00008872244,0.0011249917,0.00016362437,0.00002773076,0.00093046855,0.00032915725,0.02023499,0.02793261,0.9427593,0.002876501,0.0033764367],"study_design_scores_gemma":[0.00019314083,0.00014631281,0.0017507545,0.00010592595,0.000026644248,0.0007327071,0.00059938274,0.32270554,0.013306392,0.6573375,0.0029955206,0.000100146935],"about_ca_topic_score_codex":0.0010199425,"about_ca_topic_score_gemma":0.00088569726,"teacher_disagreement_score":0.009328476,"about_ca_system_score_codex":0.0008680769,"about_ca_system_score_gemma":0.0010320625,"threshold_uncertainty_score":0.031206906},"labels":[],"label_agreement":null},{"id":"W2065229886","doi":"10.1103/physrevlett.109.266803","title":"Suppressing Leakage by Localized Doping in Si Nanotransistor Channels","year":2012,"lang":"en","type":"article","venue":"Physical Review Letters","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":15,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McGill University","funders":"","keywords":"Doping; Leakage (economics); Materials science; Condensed matter physics; Optoelectronics; Physics","score_opus":0.019621373033929624,"score_gpt":0.27206260487011913,"score_spread":0.2524412318361895,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2065229886","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.96834815,0.00021866513,0.02933361,0.000087776774,0.000012026112,0.000014858199,0.00003383496,0.00010681226,0.0018443636],"genre_scores_gemma":[0.9966658,0.00009532151,0.0029694485,0.0000118894495,0.0000026402095,0.000011783231,0.000006963154,0.000010616043,0.00022556716],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999237,0.00001175683,0.0000036458318,0.000014331146,0.000027781256,0.000018723596],"domain_scores_gemma":[0.9998611,0.00004584735,0.000052269967,0.000017551041,0.000013428263,0.000009698469],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00016908477,0.00021366253,0.00033722163,0.00013913633,0.00017966001,0.00040548408,0.0003859933,0.00031425516,0.00034985624],"category_scores_gemma":[0.00035027642,0.00015390424,0.00020613511,0.00014309672,0.0005416762,0.0003665731,0.0002932867,0.00018279105,0.00009675195],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00014207588,0.000081711354,0.0012949888,0.00011146188,0.000024909412,0.00021130659,0.00010223734,0.17413534,0.8094045,0.009313224,0.00013358355,0.005044792],"study_design_scores_gemma":[0.000053491098,0.00036709922,0.0009487575,0.000012699288,0.00003174615,0.00011328376,0.000039863502,0.8001819,0.19463825,0.0030095703,0.0005780764,0.000025236579],"about_ca_topic_score_codex":0.0005522638,"about_ca_topic_score_gemma":0.0007280958,"teacher_disagreement_score":0.0005522638,"about_ca_system_score_codex":0.00040175536,"about_ca_system_score_gemma":0.00035481752,"threshold_uncertainty_score":0.0029149055},"labels":[],"label_agreement":null},{"id":"W2066540237","doi":"10.1149/1.3360766","title":"A Comparison of Avalanche Injection of Holes and Total Dose Radiation Effects in RadFETs","year":2010,"lang":"en","type":"article","venue":"ECS Transactions","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":3,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"","funders":"China Institute of Atomic Energy; Alberta Innovates - Health Solutions","keywords":"Dosimeter; Ionizing radiation; Radiation; Materials science; Optoelectronics; Irradiation; Radiation dose; Transistor; Dielectric; Optics; Nuclear medicine; Electrical engineering; Physics; Medicine; Engineering; Nuclear physics","score_opus":0.010876810440773337,"score_gpt":0.26388092461888485,"score_spread":0.2530041141781115,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2066540237","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9910715,0.0012842973,0.0058970954,0.000033483142,0.000040765208,0.000026068914,0.00014669493,0.0001376268,0.0013625035],"genre_scores_gemma":[0.99700826,0.00034756845,0.001732775,0.00002308533,0.000009247681,0.000010626965,0.000089985624,0.000018239927,0.0007603458],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9997546,0.0000312651,0.000014067121,0.00006757281,0.00009964001,0.00003286299],"domain_scores_gemma":[0.999206,0.00038020615,0.00014291002,0.000078312565,0.00015844063,0.000034120796],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0003365223,0.0003141671,0.000300727,0.0003193771,0.00013265823,0.00026703996,0.00044335893,0.0003403054,0.00086395803],"category_scores_gemma":[0.0009182557,0.00020682438,0.00028236661,0.00024648278,0.00023755849,0.00056295504,0.00016019885,0.00017157596,0.00014681465],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0005777756,0.000048039838,0.00494903,0.00017144438,0.000050592513,0.0002988395,0.0001550971,0.0035909337,0.97996795,0.00046242305,0.0001267372,0.009601134],"study_design_scores_gemma":[0.000028846709,0.0017583958,0.017039383,0.000023964076,0.00008530841,0.0005374854,0.00007416744,0.0151919015,0.96380556,0.00016146584,0.0012706984,0.000022855822],"about_ca_topic_score_codex":0.00047182856,"about_ca_topic_score_gemma":0.000592355,"teacher_disagreement_score":0.00086395803,"about_ca_system_score_codex":0.0002736434,"about_ca_system_score_gemma":0.0001107053,"threshold_uncertainty_score":0.0028902888},"labels":[],"label_agreement":null},{"id":"W2068305539","doi":"10.1063/1.1352672","title":"Effect of emitter metallization on thermal properties of small AlGaAs heterojunction bipolar transistors","year":2001,"lang":"en","type":"article","venue":"Journal of Applied Physics","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of British Columbia","funders":"","keywords":"Common emitter; Bipolar junction transistor; Heterojunction; Materials science; Optoelectronics; Heterostructure-emitter bipolar transistor; Transistor; Heterojunction bipolar transistor; Thermal; Voltage; Electrical engineering; Physics; Thermodynamics","score_opus":0.018027484678612805,"score_gpt":0.20754133485807824,"score_spread":0.18951385017946543,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2068305539","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9984308,0.00023566489,0.00093837763,0.00002574527,0.0000080299515,0.0000053762783,0.000030338006,0.000041829688,0.00028389716],"genre_scores_gemma":[0.9994173,0.00008847549,0.00033737213,0.0000052495116,0.000004267566,0.0000040795253,0.00001816614,0.000014112002,0.00011102331],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998574,0.000018850147,0.000009220885,0.000035577912,0.000044389853,0.00003457504],"domain_scores_gemma":[0.9991973,0.00045801495,0.00013925286,0.000096866934,0.000067314395,0.000041283445],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00024859767,0.0004215088,0.00035996168,0.00013915492,0.00026308678,0.00050191884,0.00027034304,0.0002691302,0.0009199638],"category_scores_gemma":[0.0012000541,0.00029930484,0.00022779992,0.00020079403,0.00037755852,0.0005262666,0.00025302824,0.00029708224,0.00010958525],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0003546351,0.00005168295,0.0022212772,0.00009398508,0.000045327928,0.0002772026,0.000096598,0.012330895,0.98085815,0.00024010257,0.00007135641,0.0033587804],"study_design_scores_gemma":[0.00003945994,0.00067815,0.0101857325,0.0000089872265,0.000066256376,0.0001410328,0.000049576334,0.019849258,0.9683888,0.00010401656,0.00046630748,0.000022429886],"about_ca_topic_score_codex":0.00076710305,"about_ca_topic_score_gemma":0.00095391105,"teacher_disagreement_score":0.0009199638,"about_ca_system_score_codex":0.0003511151,"about_ca_system_score_gemma":0.00015178288,"threshold_uncertainty_score":0.0030776262},"labels":[],"label_agreement":null},{"id":"W2068419104","doi":"10.1016/j.mseb.2006.06.048","title":"Improved CMOS performance via enhanced carrier mobility","year":2006,"lang":"en","type":"article","venue":"Materials Science and Engineering B","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":3,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Simon Fraser University","funders":"","keywords":"CMOS; Transistor; Electron mobility; Materials science; Nanotechnology; Silicon; Electronic engineering; Optoelectronics; Scaling; Computer science; Engineering physics; Electrical engineering; Engineering; Voltage","score_opus":0.00583242408541578,"score_gpt":0.19071460394327422,"score_spread":0.18488217985785843,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2068419104","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.8826568,0.0073159593,0.062505625,0.0027131299,0.0007697027,0.00006807528,0.00041697602,0.0025012994,0.041052505],"genre_scores_gemma":[0.980433,0.0010095871,0.012774687,0.00013024795,0.0001451064,0.000023738832,0.00009060951,0.0001154339,0.0052775154],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998815,0.000009760313,0.000006514991,0.000032067666,0.000040449395,0.000029633598],"domain_scores_gemma":[0.9998437,0.00004882645,0.000032435997,0.000027307207,0.00003139607,0.000016324548],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00016872176,0.0004490305,0.00056406343,0.00028751037,0.0003362332,0.0009830217,0.00089423003,0.001010219,0.004032771],"category_scores_gemma":[0.0004755045,0.00024174234,0.00017983053,0.0002946547,0.00035550707,0.001290343,0.0006252424,0.0005287139,0.0013186366],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0001695548,0.000049042967,0.00019769423,0.00012748419,0.000016866787,0.00015277867,0.00006726971,0.0019109165,0.96588343,0.021934932,0.0011266638,0.008363386],"study_design_scores_gemma":[0.00012432178,0.0004456365,0.00071877067,0.00004712355,0.000096105454,0.00078771333,0.00004257278,0.043762576,0.9246411,0.00824546,0.021022584,0.00006608034],"about_ca_topic_score_codex":0.0002842845,"about_ca_topic_score_gemma":0.0004591072,"teacher_disagreement_score":0.004032771,"about_ca_system_score_codex":0.00042962786,"about_ca_system_score_gemma":0.0002801263,"threshold_uncertainty_score":0.013490915},"labels":[],"label_agreement":null},{"id":"W2069039255","doi":"10.1109/iccrd.2011.5764223","title":"Design and analysis of low power Carbon Nanotube Field Effect Transistor (CNFET) D Flip-Flops (DFFs)","year":2011,"lang":"en","type":"article","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":2,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Lakehead University","funders":"","keywords":"CMOS; FLOPS; Computer science; Carbon nanotube field-effect transistor; Transistor; Flip-flop; Power–delay product; Field-effect transistor; Voltage; Power (physics); Materials science; Electronic engineering; Optoelectronics; Electrical engineering; Parallel computing; Engineering","score_opus":0.014063523500009719,"score_gpt":0.20699738763967873,"score_spread":0.192933864139669,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2069039255","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.25113508,0.0016486315,0.73324394,0.0004373685,0.00012691882,0.0002750135,0.00032561942,0.0006855427,0.012121847],"genre_scores_gemma":[0.87309885,0.0005926605,0.12195813,0.00008256657,0.00002247833,0.00012338902,0.00012513647,0.000035365167,0.0039614285],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9998578,0.000015999687,0.000004618786,0.000027748312,0.00007786149,0.000015944486],"domain_scores_gemma":[0.9998079,0.00006882039,0.000038308255,0.000013060205,0.00006368366,0.000008361473],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0001676844,0.00045522867,0.00023887742,0.00023181635,0.00024126777,0.000364071,0.0006311845,0.00051670696,0.0011455689],"category_scores_gemma":[0.00042614512,0.00018576803,0.0002928687,0.00017080193,0.00019007338,0.00041834402,0.000111988425,0.00023767243,0.0001683128],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0001736227,0.00008490439,0.0024274616,0.0005620057,0.00008739512,0.0005606566,0.00009660039,0.55810755,0.32962072,0.010329633,0.0015306692,0.09641877],"study_design_scores_gemma":[0.000038590562,0.00049324904,0.0012501285,0.000027626207,0.00004136883,0.00024433472,0.000024744379,0.91803366,0.071700566,0.0018034525,0.006321607,0.000020641683],"about_ca_topic_score_codex":0.003035052,"about_ca_topic_score_gemma":0.005385526,"teacher_disagreement_score":0.003035052,"about_ca_system_score_codex":0.0008713545,"about_ca_system_score_gemma":0.00068790326,"threshold_uncertainty_score":0.006322205},"labels":[],"label_agreement":null},{"id":"W2070509553","doi":"10.1007/s10825-006-0080-z","title":"Issues in the modeling of carbon nanotube FETs: Structure, gate thickness, and azimuthal asymmetry","year":2006,"lang":"en","type":"article","venue":"Journal of Computational Electronics","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":7,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of British Columbia","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Carbon nanotube; Planar; Coaxial; Asymmetry; Materials science; Carbon nanotube field-effect transistor; Transistor; Field-effect transistor; Azimuth; Nanotube; Current (fluid); Optoelectronics; Condensed matter physics; Nanotechnology; Physics; Electrical engineering; Computer science; Optics; Voltage; Engineering","score_opus":0.007651393335260923,"score_gpt":0.23255500629330608,"score_spread":0.22490361295804517,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2070509553","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.5308856,0.0056071724,0.37720883,0.0074963234,0.0004930165,0.00008134535,0.00057397835,0.00036142202,0.07729234],"genre_scores_gemma":[0.9803345,0.0013775964,0.011208086,0.00021481991,0.00013455901,0.000046510464,0.00008290019,0.00012879248,0.0064721974],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.999819,0.00005855247,0.00000767544,0.000019907307,0.00006604719,0.00002896554],"domain_scores_gemma":[0.9995524,0.00023559823,0.00006124661,0.000043373147,0.0000783939,0.00002892809],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00047581212,0.0005602337,0.00070453284,0.00029367817,0.00062760874,0.0010844624,0.0012177455,0.002025311,0.0010237674],"category_scores_gemma":[0.0019615951,0.00059211766,0.00051563344,0.00052308844,0.00083064556,0.0018937124,0.0004864872,0.000824296,0.000280934],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00003427134,0.000025255287,0.00044386613,0.000048017657,0.000013657078,0.00020103391,0.000039316652,0.9405564,0.008762017,0.046827137,0.00040843547,0.002640629],"study_design_scores_gemma":[0.000005489484,0.000008930184,0.00016701619,0.000006144144,0.0000051226302,0.00003899023,0.000011435984,0.9885914,0.0010681088,0.009585831,0.0005035035,0.000008067987],"about_ca_topic_score_codex":0.003279119,"about_ca_topic_score_gemma":0.0041310717,"teacher_disagreement_score":0.003279119,"about_ca_system_score_codex":0.00090377696,"about_ca_system_score_gemma":0.0007870957,"threshold_uncertainty_score":0.0065573454},"labels":[],"label_agreement":null},{"id":"W2074100773","doi":"10.1063/1.2654973","title":"Theory of microplasma fluctuations and noise in silicon diode in avalanche breakdown","year":2007,"lang":"en","type":"article","venue":"Journal of Applied Physics","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":40,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McMaster University","funders":"","keywords":"Microplasma; Noise (video); Materials science; Diode; Avalanche breakdown; Optoelectronics; Semiconductor device; Semiconductor; Avalanche diode; Diffusion; Condensed matter physics; Computational physics; Nanotechnology; Physics; Plasma; Breakdown voltage; Quantum mechanics; Voltage; Computer science","score_opus":0.011258313965968162,"score_gpt":0.22684215793419074,"score_spread":0.21558384396822258,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2074100773","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.07343574,0.01125298,0.8556728,0.002512435,0.0005395661,0.00008967543,0.0001835425,0.0003497292,0.055963572],"genre_scores_gemma":[0.92832434,0.005203716,0.044119418,0.000838693,0.00089150574,0.00024541403,0.00013132836,0.00014196162,0.020103605],"study_design_codex":"theoretical_or_conceptual","study_design_gemma":"theoretical_or_conceptual","domain_scores_codex":[0.9995976,0.00010490316,0.000016268163,0.00005392382,0.00018298927,0.00004425529],"domain_scores_gemma":[0.9993395,0.0004598022,0.000043022465,0.000031278356,0.000092528375,0.00003377355],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0010655574,0.0005426487,0.0006500237,0.0012097999,0.00068596576,0.0011131545,0.0014325025,0.0011552029,0.0015689214],"category_scores_gemma":[0.0020541013,0.00028182092,0.00053451577,0.00066225545,0.0017015558,0.0021410456,0.0006257956,0.00093552796,0.00033037658],"study_design_candidate":"theoretical_or_conceptual","study_design_consensus":"theoretical_or_conceptual","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000020901272,0.000020270654,0.00026470932,0.00006969404,0.000010181329,0.00025626403,0.00016411554,0.08725434,0.0020405243,0.90457755,0.0012434233,0.0040780157],"study_design_scores_gemma":[0.0000068923905,0.00003412835,0.00023199954,0.000023007766,0.0000049378286,0.00013350262,0.000026313457,0.5533275,0.00043709582,0.44347492,0.0022764094,0.000023232666],"about_ca_topic_score_codex":0.0012506215,"about_ca_topic_score_gemma":0.00063985545,"teacher_disagreement_score":0.0015689214,"about_ca_system_score_codex":0.0011436353,"about_ca_system_score_gemma":0.00042640473,"threshold_uncertainty_score":0.008297682},"labels":[],"label_agreement":null},{"id":"W2077045439","doi":"10.1049/iet-cdt.2012.0038","title":"High-performance low-power sensing scheme for nanoscale SRAMs","year":2012,"lang":"en","type":"article","venue":"IET Computers & Digital Techniques","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":2,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Concordia University","funders":"","keywords":"Static random-access memory; CMOS; Dissipation; Process variation; Overhead (engineering); Computer science; Electronic engineering; Leakage (economics); Integrated circuit; Power (physics); Reduction (mathematics); Amplifier; Electronic circuit; Leakage power; Electrical engineering; Engineering; Transistor; Voltage; Physics","score_opus":0.0106758076462873,"score_gpt":0.21924112964637413,"score_spread":0.20856532200008682,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2077045439","genre_codex":"empirical","genre_gemma":"methods","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"methods","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.51231223,0.0016267976,0.4771313,0.0005966088,0.0002224592,0.000094242096,0.00013914803,0.0020115806,0.005865608],"genre_scores_gemma":[0.96173483,0.00012311993,0.03697327,0.00009515795,0.000025388388,0.000012372558,0.000023502376,0.000011786853,0.0010005628],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998808,0.000017920767,0.000010509969,0.000032618766,0.00004696574,0.000011217483],"domain_scores_gemma":[0.9998148,0.00005232565,0.000042968695,0.00004478536,0.000037971997,0.000007109575],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000110927955,0.00015243585,0.00015386227,0.00012095905,0.00014214692,0.00026921002,0.0007303875,0.00032970577,0.0012811188],"category_scores_gemma":[0.00032529532,0.000100141704,0.00013344876,0.00011657523,0.0001494443,0.0006989228,0.0001823586,0.00018775286,0.00024046512],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00022543193,0.00007547223,0.00093085045,0.00020678395,0.000030381083,0.00025348872,0.00010180005,0.009216677,0.8950029,0.0063577723,0.0011396579,0.086458795],"study_design_scores_gemma":[0.00007854502,0.0019773312,0.003182082,0.00004534493,0.00009933017,0.0019323502,0.000079795995,0.2543867,0.71900535,0.004201198,0.014967385,0.000044567816],"about_ca_topic_score_codex":0.00013493087,"about_ca_topic_score_gemma":0.0004906822,"teacher_disagreement_score":0.0012811188,"about_ca_system_score_codex":0.00017145314,"about_ca_system_score_gemma":0.00011529166,"threshold_uncertainty_score":0.004285753},"labels":[],"label_agreement":null},{"id":"W2077625097","doi":"10.1109/ccece.2006.277278","title":"Parallel Approach to the Nanothermal Numerical Analysis","year":2006,"lang":"en","type":"article","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":2,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Université du Québec à Trois-Rivières","funders":"","keywords":"Computation; Computer science; Thermal; Thermal analysis; Plan (archaeology); Nanoscopic scale; Transistor; Numerical analysis; Computational science; Parallel computing; Materials science; Physics; Algorithm; Nanotechnology; Electrical engineering; Engineering; Mathematics; Mathematical analysis; Thermodynamics","score_opus":0.013186976296689586,"score_gpt":0.2156718234557934,"score_spread":0.2024848471591038,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2077625097","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.0066231447,0.0005136896,0.9772789,0.0006257152,0.00024368732,0.000035891848,0.000058642396,0.00024684684,0.014373536],"genre_scores_gemma":[0.2774836,0.0021484513,0.70091695,0.00035718436,0.00044536797,0.00043254174,0.00016216557,0.0003763811,0.017677398],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9993649,0.000158609,0.000032035576,0.000061421866,0.00033855226,0.00004438987],"domain_scores_gemma":[0.9991472,0.00032961773,0.00006042277,0.00019326954,0.00023186153,0.000037625956],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0007125706,0.00046170835,0.0006244218,0.0007479781,0.00069833786,0.00118493,0.000940312,0.0006269042,0.0043813796],"category_scores_gemma":[0.0023959419,0.00026815003,0.0007269048,0.0006794824,0.0011361955,0.0013586256,0.0013468247,0.0012428932,0.00086109433],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00007959169,0.0000671788,0.0007344812,0.0001856261,0.000055520784,0.0001489877,0.00013214479,0.4931298,0.0053121126,0.42733273,0.0027533146,0.07006855],"study_design_scores_gemma":[0.000010122628,0.000010556498,0.00009296015,0.000010201222,0.0000062629815,0.000032007087,0.000012837783,0.9138386,0.0010419879,0.077278756,0.0076580564,0.000007676061],"about_ca_topic_score_codex":0.0021786648,"about_ca_topic_score_gemma":0.0025359422,"teacher_disagreement_score":0.0043813796,"about_ca_system_score_codex":0.0009278123,"about_ca_system_score_gemma":0.00096760987,"threshold_uncertainty_score":0.014657199},"labels":[],"label_agreement":null},{"id":"W2080424997","doi":"10.1143/jjap.46.6503","title":"Radio Frequency Characteristics of Multifinger 0.1 µm Metamorphic High-Electron-Mobility Transistors Depending on Number of Gate Fingers and Gate Width","year":2007,"lang":"en","type":"article","venue":"Japanese Journal of Applied Physics","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":2,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Transconductance; Cutoff frequency; Capacitance; Oscillation (cell signaling); Transistor; Conductance; Materials science; Optoelectronics; Metal gate; Electrical engineering; Analytical Chemistry (journal); Chemistry; Physics; Condensed matter physics; Gate oxide; Electrode; Voltage; Engineering","score_opus":0.010733198977801185,"score_gpt":0.23231056668711567,"score_spread":0.2215773677093145,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2080424997","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99888927,0.000125092,0.00059423683,0.000021926364,0.000003485664,0.000002451891,0.00005743264,0.00002338124,0.0002826772],"genre_scores_gemma":[0.9992562,0.00005623405,0.0003926621,0.000006237731,0.0000025610243,0.0000026964556,0.0000476127,0.0000042314364,0.00023161585],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99993896,0.000005226987,0.0000031488287,0.000019094578,0.000021400623,0.000012193696],"domain_scores_gemma":[0.9996381,0.00019121147,0.00008728938,0.000018780795,0.000046186367,0.000018278746],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00012064504,0.00016653427,0.00012720547,0.00017166237,0.00007560223,0.0001211427,0.00016410704,0.00021969202,0.0007303715],"category_scores_gemma":[0.00044045108,0.00007481284,0.00009042255,0.00014906787,0.0001486361,0.00021460683,0.00007012054,0.00013351317,0.00011016865],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00019406504,0.0000133066715,0.0026108467,0.000038694074,0.000009929711,0.00015394796,0.00013760434,0.0012961238,0.99202913,0.00014232293,0.00006481948,0.0033092257],"study_design_scores_gemma":[0.00004665318,0.0012501063,0.051221874,0.000025673704,0.00008520449,0.00079969916,0.00014047725,0.048098758,0.8963466,0.0002780906,0.0016720959,0.000034669763],"about_ca_topic_score_codex":0.00049945887,"about_ca_topic_score_gemma":0.0007383856,"teacher_disagreement_score":0.0007303715,"about_ca_system_score_codex":0.00019939919,"about_ca_system_score_gemma":0.000060387712,"threshold_uncertainty_score":0.0024433136},"labels":[],"label_agreement":null},{"id":"W2083286245","doi":"10.1109/oic.2013.6552927","title":"Integrated photodiode characterization in a SiGe BiCMOS process","year":2013,"lang":"en","type":"article","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Toronto","funders":"","keywords":"Responsivity; BiCMOS; Photodiode; Photodetector; Silicon-germanium; Optoelectronics; Materials science; Bandwidth (computing); CMOS; Detector; Microelectronics; Process (computing); Characterization (materials science); Electronic engineering; Silicon; Computer science; Electrical engineering; Engineering; Transistor; Nanotechnology; Telecommunications","score_opus":0.0102904879109848,"score_gpt":0.21140297034849734,"score_spread":0.20111248243751254,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2083286245","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.97157854,0.00034069867,0.025397183,0.00005791261,0.000012942559,0.000043964326,0.00031635637,0.00032650537,0.0019259059],"genre_scores_gemma":[0.99228865,0.00012418863,0.006539231,0.000017122224,0.0000018161818,0.000020350331,0.00011050728,0.00002164295,0.0008763741],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9997893,0.000021471089,0.0000073718384,0.00004534571,0.00010441839,0.000032129545],"domain_scores_gemma":[0.9996112,0.000119083415,0.000051265615,0.000048468755,0.00015402913,0.000015966358],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00022836358,0.00033835048,0.00034364138,0.00023211516,0.00030031556,0.0006993468,0.0005266665,0.00053552317,0.0011737032],"category_scores_gemma":[0.0006881377,0.00022889175,0.0002816361,0.00028762856,0.00021694953,0.00066034327,0.00014702661,0.00026326042,0.00025211196],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0005601313,0.00015362797,0.009529949,0.00028627235,0.00017122559,0.000498568,0.0004484966,0.080773406,0.88351136,0.0018952802,0.0004134157,0.021758301],"study_design_scores_gemma":[0.00010708816,0.0016265123,0.02244392,0.00004774184,0.00020348757,0.0005580166,0.00029540958,0.20919822,0.7606997,0.0008218219,0.0039238897,0.00007428342],"about_ca_topic_score_codex":0.0030970266,"about_ca_topic_score_gemma":0.0026018608,"teacher_disagreement_score":0.0030970266,"about_ca_system_score_codex":0.00075303594,"about_ca_system_score_gemma":0.0005652665,"threshold_uncertainty_score":0.0061579943},"labels":[],"label_agreement":null},{"id":"W2083488767","doi":"10.1109/tc.2014.2315633","title":"Accurate and Efficient Estimation of Logic Circuits Reliability Bounds","year":2014,"lang":"en","type":"article","venue":"IEEE Transactions on Computers","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":17,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Carleton University","funders":"United Arab Emirates University","keywords":"Reliability (semiconductor); Computer science; Heuristic; Electronic circuit; Algorithm; Logic gate; Range (aeronautics); Circuit reliability; Criticality; Computer engineering; Reliability engineering; Combinational logic; Power (physics); Engineering; Artificial intelligence; Electrical engineering","score_opus":0.01555136879958166,"score_gpt":0.2360664803390563,"score_spread":0.22051511153947465,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2083488767","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.01970407,0.00018908671,0.97769004,0.00007169575,0.000010010578,0.00003304044,0.00009534655,0.0008373825,0.0013692427],"genre_scores_gemma":[0.4466819,0.0003273625,0.55042106,0.000056376724,0.00004540243,0.00013268834,0.0005637998,0.00021132335,0.0015600742],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9989587,0.00028315687,0.000050232895,0.00018399925,0.00043603117,0.00008775531],"domain_scores_gemma":[0.9959466,0.0024914455,0.0003612043,0.0004750733,0.00065102795,0.00007480052],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0011867271,0.0010508902,0.0011090096,0.0016920834,0.0004665351,0.0013115105,0.0011215701,0.0009254479,0.0021877852],"category_scores_gemma":[0.011846286,0.0007176662,0.0006289581,0.00081571104,0.00054534554,0.0016856373,0.0009860425,0.0011554341,0.0007737288],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000058178455,0.000029457971,0.0012527019,0.000070086455,0.000027450284,0.0000538533,0.00003939879,0.884858,0.005946839,0.010433714,0.0010209815,0.09620941],"study_design_scores_gemma":[0.000003566982,0.0000072447083,0.00015548508,0.000004162747,0.0000023970365,0.0000161876,0.0000041534117,0.99398166,0.000984998,0.004673656,0.00016219795,0.0000042190195],"about_ca_topic_score_codex":0.0035746591,"about_ca_topic_score_gemma":0.0041711,"teacher_disagreement_score":0.0035746591,"about_ca_system_score_codex":0.0008991058,"about_ca_system_score_gemma":0.0013948333,"threshold_uncertainty_score":0.0073188543},"labels":[],"label_agreement":null},{"id":"W2083735720","doi":"10.1109/lpe.2005.195491","title":"Challenges and opportunities for low power FPGAs in nanometer technologies [Special Session","year":2005,"lang":"en","type":"article","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of British Columbia","funders":"","keywords":"Session (web analytics); Field-programmable gate array; Computer science; Nanometre; Power (physics); Computer architecture; Embedded system; Engineering; World Wide Web; Physics","score_opus":0.07212016523682477,"score_gpt":0.261580143832144,"score_spread":0.18945997859531924,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2083735720","genre_codex":"review","genre_gemma":"review","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"review","genre_consensus":"review","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.04415302,0.4165574,0.1319334,0.09401312,0.044960294,0.00019344843,0.00046558358,0.0022203939,0.26550335],"genre_scores_gemma":[0.25937328,0.24994211,0.098442644,0.018594509,0.034013752,0.00020544142,0.0008087045,0.00045528257,0.33816427],"study_design_codex":"design_other","study_design_gemma":"theoretical_or_conceptual","domain_scores_codex":[0.9998745,0.000019576653,0.000006231313,0.000019663885,0.00004632408,0.000033702934],"domain_scores_gemma":[0.9996131,0.00018704549,0.00001541969,0.000024413399,0.0001103661,0.000049768674],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00072353,0.00036217363,0.00048456452,0.00023810202,0.00062425487,0.002063363,0.00057915476,0.0013395249,0.024956726],"category_scores_gemma":[0.00072545465,0.00021765167,0.00023107928,0.00029829415,0.00043448116,0.002390655,0.00041866253,0.0012220435,0.0035216527],"study_design_candidate":"theoretical_or_conceptual","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00045108204,0.00007246127,0.0011562643,0.0014127115,0.000080240665,0.0005640521,0.00017238206,0.0046422514,0.035520956,0.11732401,0.25630257,0.5823011],"study_design_scores_gemma":[0.000052330477,0.00030784588,0.00083144,0.00022673798,0.000044135744,0.0008820711,0.00023479122,0.0065498315,0.008278949,0.05177914,0.93077505,0.000037850725],"about_ca_topic_score_codex":0.0003615673,"about_ca_topic_score_gemma":0.001069081,"teacher_disagreement_score":0.024956726,"about_ca_system_score_codex":0.00034343996,"about_ca_system_score_gemma":0.00040550533,"threshold_uncertainty_score":0.08348858},"labels":[],"label_agreement":null},{"id":"W2085058923","doi":"10.1117/12.560713","title":"&lt;title&gt;Automatic generation of optical large-signal FET models&lt;/title&gt;","year":2004,"lang":"en","type":"article","venue":"Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Ottawa","funders":"","keywords":"MESFET; SIGNAL (programming language); Metric (unit); Computer science; Topology (electrical circuits); Transconductance; Process (computing); Electronic engineering; Performance metric; Electronic design automation; CAD; Large-signal model; Small-signal model; Power (physics); Transistor; Voltage; Electrical engineering; Engineering; Field-effect transistor","score_opus":0.019979696533407396,"score_gpt":0.23027400528399336,"score_spread":0.21029430875058597,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2085058923","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.03190554,0.00013561023,0.9448469,0.00017120095,0.000058147893,0.0001301708,0.0014948606,0.010677802,0.010579694],"genre_scores_gemma":[0.43524462,0.00034758612,0.5460666,0.000107834785,0.000025214278,0.00038491064,0.0036895836,0.0021600912,0.011973672],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9998683,0.000017652523,0.00000797608,0.000023674642,0.000071851566,0.000010471869],"domain_scores_gemma":[0.999747,0.00010361505,0.000021414926,0.00005653123,0.0000648292,0.0000065338254],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00026642048,0.00048060884,0.00031336717,0.00038146207,0.00020597992,0.0006932767,0.0006131463,0.0003639379,0.0071792747],"category_scores_gemma":[0.0008804921,0.00028310926,0.0004701418,0.00022655983,0.0001706733,0.00070881605,0.00024018307,0.0003826452,0.0020683312],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00018061415,0.0000645391,0.0021450282,0.00042974803,0.00007530217,0.0003455519,0.00014171931,0.53223014,0.17997079,0.023396872,0.02017518,0.24084456],"study_design_scores_gemma":[0.000013373409,0.000033803582,0.00031740364,0.000011788584,0.000011237273,0.000059697064,0.000014524163,0.9347243,0.051330317,0.0023140446,0.011156239,0.000013364828],"about_ca_topic_score_codex":0.0017455103,"about_ca_topic_score_gemma":0.0049846456,"teacher_disagreement_score":0.0071792747,"about_ca_system_score_codex":0.0005670397,"about_ca_system_score_gemma":0.00059655705,"threshold_uncertainty_score":0.024017036},"labels":[],"label_agreement":null},{"id":"W2085806145","doi":"10.1109/tdmr.2005.853502","title":"Effects of hot-carrier stress on the performance of CMOS low-noise amplifiers","year":2005,"lang":"en","type":"article","venue":"IEEE Transactions on Device and Materials Reliability","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":39,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McMaster University","funders":"CMC Microsystems","keywords":"Transconductance; CMOS; Materials science; Electrical engineering; Transistor; Optoelectronics; Amplifier; Low-noise amplifier; Noise figure; Biasing; Linearity; Electronic engineering; Voltage; Engineering","score_opus":0.008578355389748746,"score_gpt":0.21580652447557683,"score_spread":0.20722816908582808,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2085806145","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9981359,0.0007006743,0.000754312,0.000033650496,0.000019327612,0.0000052985592,0.00006662098,0.000042975324,0.00024134199],"genre_scores_gemma":[0.99936694,0.00015236401,0.00021502616,0.000018991896,0.000014950033,0.000003742673,0.00006437663,0.000011985969,0.00015182502],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99965703,0.00006428248,0.00004207013,0.000059945185,0.00009742738,0.00007924258],"domain_scores_gemma":[0.9975661,0.0012407677,0.00045600673,0.00016358214,0.00039288815,0.00018057402],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000279481,0.00045673214,0.00042319152,0.00018323376,0.0002158181,0.00033289738,0.00022363396,0.00041944452,0.0011857812],"category_scores_gemma":[0.001712608,0.00016976763,0.00018858947,0.00023920879,0.00031625445,0.0005116796,0.0002655815,0.00019724839,0.00028344983],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0014593134,0.00008121113,0.009763044,0.00019876522,0.00010838198,0.0006120328,0.0002611325,0.0050957073,0.9680387,0.00009904865,0.00013043886,0.014152199],"study_design_scores_gemma":[0.000059092778,0.0065043215,0.04542816,0.000030493613,0.00024938592,0.0010523237,0.00026277325,0.0118570365,0.93292856,0.00024109958,0.0013386919,0.000048203732],"about_ca_topic_score_codex":0.00034853612,"about_ca_topic_score_gemma":0.0005334632,"teacher_disagreement_score":0.0011857812,"about_ca_system_score_codex":0.00020189348,"about_ca_system_score_gemma":0.00012445857,"threshold_uncertainty_score":0.0039668083},"labels":[],"label_agreement":null},{"id":"W2087024049","doi":"10.1039/c3nr06087j","title":"Building a Fab on a Chip","year":2014,"lang":"en","type":"article","venue":"Nanoscale","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":21,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Bell (Canada)","funders":"","keywords":"Chip; Silicon chip; Computer science; Macro; Path (computing); Embedded system; Scale (ratio); Silicon; Telecommunications; Operating system; Materials science; Physics","score_opus":0.013965342211973908,"score_gpt":0.23730801363271195,"score_spread":0.22334267142073805,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2087024049","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.06172364,0.0021645334,0.7761102,0.0034010794,0.0010140209,0.00041511742,0.0003449965,0.0071464186,0.14767997],"genre_scores_gemma":[0.28750688,0.0017751043,0.68228334,0.0011277687,0.0002124555,0.00016999537,0.0004307666,0.00062177563,0.025871951],"study_design_codex":"design_other","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9989851,0.000102545266,0.000027597998,0.00016690041,0.00048653845,0.00023114929],"domain_scores_gemma":[0.99899536,0.00015510502,0.000048452108,0.00036713126,0.00026172487,0.00017222381],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0010570735,0.001058146,0.0006780967,0.0008085238,0.0010963733,0.002170049,0.001674412,0.0013942411,0.015506682],"category_scores_gemma":[0.0013856317,0.0006326465,0.00097070826,0.00047022654,0.00089805183,0.002917052,0.002447394,0.001644527,0.00731001],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00025488005,0.00037503586,0.0031224762,0.0006463005,0.00021250643,0.0015542076,0.0013080803,0.0491717,0.22824605,0.21147852,0.061080653,0.4425496],"study_design_scores_gemma":[0.00011769863,0.0009988529,0.0038729326,0.00024779854,0.00022658615,0.0020017335,0.000868403,0.080119796,0.10473326,0.05884306,0.74779505,0.00017478572],"about_ca_topic_score_codex":0.0025881517,"about_ca_topic_score_gemma":0.002382201,"teacher_disagreement_score":0.015506682,"about_ca_system_score_codex":0.0010408256,"about_ca_system_score_gemma":0.002072492,"threshold_uncertainty_score":0.051875055},"labels":[],"label_agreement":null},{"id":"W2087791643","doi":"10.1109/austrochip.2014.6946323","title":"Low-noise transimpedance amplifier designg procedure for optical communications","year":2014,"lang":"en","type":"article","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":9,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Ontario Tech University","funders":"","keywords":"Transimpedance amplifier; Effective input noise temperature; Electronic engineering; CMOS; Bandwidth (computing); Noise (video); Low-noise amplifier; Electrical engineering; Noise figure; Capacitive sensing; Photodiode; Instrumentation amplifier; Computer science; Amplifier; Electronic circuit; Operational amplifier; Engineering; Physics; Optoelectronics; Telecommunications","score_opus":0.029017664256950876,"score_gpt":0.26628656126128303,"score_spread":0.23726889700433215,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2087791643","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.17183723,0.0010914843,0.81100684,0.00057900837,0.00024019208,0.00061673747,0.00046324954,0.003262577,0.010902662],"genre_scores_gemma":[0.69209796,0.000384367,0.29923597,0.00018425377,0.00006414779,0.00037234856,0.00033868128,0.00016743474,0.0071549076],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9993517,0.00006220715,0.00003374634,0.00014519831,0.00035167276,0.00005553843],"domain_scores_gemma":[0.9992766,0.00011636845,0.00010347557,0.00011816605,0.00036081302,0.000024612245],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0004387255,0.00062211993,0.00026058414,0.00049916166,0.00045020334,0.00064536656,0.00097118237,0.00046332576,0.0029922712],"category_scores_gemma":[0.001427411,0.00019307027,0.0002387426,0.00028096055,0.0002652083,0.0006267387,0.00024863015,0.00045852966,0.0013052039],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00007373391,0.000047835467,0.0010279211,0.00019576288,0.000027279857,0.00014035405,0.00015888583,0.0019920834,0.94773436,0.002672542,0.0008228307,0.045106404],"study_design_scores_gemma":[0.000020557623,0.0005006381,0.0021358696,0.00002596371,0.000046900685,0.00065818056,0.0000583694,0.019826874,0.9608441,0.000746219,0.015103906,0.000032462533],"about_ca_topic_score_codex":0.00069530297,"about_ca_topic_score_gemma":0.0013400835,"teacher_disagreement_score":0.0029922712,"about_ca_system_score_codex":0.0007155079,"about_ca_system_score_gemma":0.00066927396,"threshold_uncertainty_score":0.010010123},"labels":[],"label_agreement":null},{"id":"W2088859456","doi":"10.1145/1117201.1117221","title":"A reconfigurable architecture for hybrid CMOS/Nanodevice circuits","year":2006,"lang":"en","type":"article","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":109,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":true,"ca_institutions":"","funders":"","keywords":"CMOS; Field-programmable gate array; Electronic circuit; Computer science; Transistor; Electronic engineering; Crossbar switch; Logic gate; Embedded system; Electrical engineering; Voltage; Engineering","score_opus":0.01273265699637015,"score_gpt":0.21401286921412735,"score_spread":0.2012802122177572,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2088859456","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.8767406,0.0006228947,0.11172325,0.000078659185,0.000055017383,0.000068327245,0.00013629496,0.0022084175,0.008366658],"genre_scores_gemma":[0.93463945,0.00009563128,0.0630977,0.00003483899,0.0000061965907,0.000032339045,0.00010935442,0.000037130398,0.0019471978],"study_design_codex":"bench_or_experimental","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9999083,0.000012892343,0.000004471863,0.000017532197,0.00003449525,0.000022212878],"domain_scores_gemma":[0.99989116,0.00002324979,0.000017363738,0.00003639858,0.000019021296,0.000012683003],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000098251156,0.00022172419,0.00012324382,0.00019381559,0.00013448553,0.00031646283,0.00053600065,0.00014795044,0.0012820507],"category_scores_gemma":[0.00014485423,0.000084727944,0.00013348134,0.00014436583,0.00012875137,0.00024391818,0.0001873871,0.00013754179,0.00023482261],"study_design_candidate":"simulation_or_modeling","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00047972013,0.00010079742,0.0022115558,0.00015124385,0.00005383932,0.00035523486,0.000048790673,0.07867674,0.8114749,0.00611102,0.0011757689,0.09916033],"study_design_scores_gemma":[0.00012317176,0.0014404983,0.004563601,0.000018803394,0.00007517621,0.0006284273,0.00004189373,0.2944003,0.6753538,0.0019794588,0.021331167,0.00004360016],"about_ca_topic_score_codex":0.00059268286,"about_ca_topic_score_gemma":0.0012612435,"teacher_disagreement_score":0.0012820507,"about_ca_system_score_codex":0.0002643631,"about_ca_system_score_gemma":0.000129254,"threshold_uncertainty_score":0.004288852},"labels":[],"label_agreement":null},{"id":"W2090145479","doi":"10.1007/s10825-014-0557-0","title":"Analytical subthreshold current and subthreshold swing models of short-channel dual-metal-gate (DMG) fully-depleted recessed-source/drain (Re-S/D) SOI MOSFETs","year":2014,"lang":"en","type":"article","venue":"Journal of Computational Electronics","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":9,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Memorial University of Newfoundland","funders":"Science and Engineering Research Board; Department of Science and Technology, Ministry of Science and Technology, India","keywords":"Subthreshold conduction; Subthreshold swing; Silicon on insulator; Cathode; Optoelectronics; Subthreshold slope; Channel (broadcasting); Current (fluid); Materials science; Electrical engineering; Swing; MOSFET; Physics; Silicon; Transistor; Voltage; Engineering; Acoustics","score_opus":0.027434091220639414,"score_gpt":0.26042174380507804,"score_spread":0.23298765258443863,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2090145479","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.6141981,0.0053612445,0.2726607,0.0013607066,0.00025664305,0.0002288279,0.00191652,0.0010115115,0.10300576],"genre_scores_gemma":[0.9846331,0.0006685116,0.0036322214,0.000085736196,0.000031625823,0.00004039095,0.00016589026,0.000058554615,0.01068407],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9999261,0.000011236418,0.0000031850454,0.000011365519,0.000026469585,0.000021602116],"domain_scores_gemma":[0.9998535,0.00004768166,0.00001963379,0.000012977069,0.000053916643,0.000012297907],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00024404311,0.00044268413,0.0005826423,0.00050569995,0.00035583274,0.00062406866,0.0011763346,0.0007734789,0.002137917],"category_scores_gemma":[0.00045794627,0.0002612531,0.000845639,0.0003370087,0.0004051655,0.0006820292,0.00021910963,0.00038566595,0.0005277804],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00010940364,0.000056431596,0.00077337504,0.00013934518,0.000057986927,0.00035848512,0.00030449053,0.9217212,0.022986839,0.044818357,0.0018736117,0.0068004136],"study_design_scores_gemma":[0.0000020893544,0.0000072512303,0.00010849129,0.0000065536024,0.000005457077,0.000020139598,0.000010502983,0.9976889,0.00032759315,0.0015773848,0.00024267072,0.000002929745],"about_ca_topic_score_codex":0.010159085,"about_ca_topic_score_gemma":0.015648283,"teacher_disagreement_score":0.010159085,"about_ca_system_score_codex":0.0017357334,"about_ca_system_score_gemma":0.00075188826,"threshold_uncertainty_score":0.020199895},"labels":[],"label_agreement":null},{"id":"W2091152188","doi":"10.1063/1.1470252","title":"Low frequency noise of reverse biased rectifier diodes in the avalanche breakdown regime","year":2002,"lang":"en","type":"article","venue":"Journal of Applied Physics","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":5,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McMaster University","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Microplasma; Avalanche diode; Noise (video); Avalanche breakdown; Impact ionization; Single-photon avalanche diode; Infrasound; Bistability; Breakdown voltage; Waveform; Optoelectronics; Materials science; Zener diode; Rectifier (neural networks); Computational physics; Diode; Ionization; Physics; Voltage; Avalanche photodiode; Plasma; Acoustics; Optics; Ion; Computer science","score_opus":0.023962709491722876,"score_gpt":0.21978469986914087,"score_spread":0.195821990377418,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2091152188","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9736708,0.0006391486,0.021087632,0.00010668844,0.000024730445,0.000019738804,0.00009956546,0.0001638221,0.0041878866],"genre_scores_gemma":[0.9980275,0.00010183592,0.00087204576,0.000022679473,0.000014119551,0.000008238901,0.000056723755,0.000017712722,0.0008790563],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9996778,0.000042511867,0.000012355741,0.0000703577,0.00015698919,0.00004007343],"domain_scores_gemma":[0.9989248,0.00068599946,0.000109018074,0.000062186446,0.00016576948,0.00005231872],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0004896074,0.00018647913,0.00035906132,0.0004377346,0.00016997577,0.00040586482,0.00036657872,0.00048367382,0.0011100168],"category_scores_gemma":[0.0022592668,0.0001570349,0.00020405756,0.00023203481,0.0003732348,0.00040882593,0.00017531913,0.0003715037,0.00036991976],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0009787892,0.00008200673,0.0062971194,0.00009752648,0.00003596836,0.00072764774,0.0004055864,0.009093971,0.96221656,0.0038772125,0.00020082483,0.015986694],"study_design_scores_gemma":[0.0002309586,0.0017166669,0.054634895,0.00010978419,0.000121339704,0.0043130624,0.00030336648,0.3042138,0.6214514,0.009121028,0.003629139,0.00015459316],"about_ca_topic_score_codex":0.0004307521,"about_ca_topic_score_gemma":0.00023868549,"teacher_disagreement_score":0.0011100168,"about_ca_system_score_codex":0.0004183809,"about_ca_system_score_gemma":0.00012195902,"threshold_uncertainty_score":0.0037133694},"labels":[],"label_agreement":null},{"id":"W2092848553","doi":"10.1116/1.1503789","title":"Current gain degradation in SiGe HBTs by hot carriers","year":2002,"lang":"en","type":"article","venue":"Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":2,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Institute for Microstructural Sciences","funders":"","keywords":"Common emitter; Materials science; Quantum tunnelling; Optoelectronics; Degradation (telecommunications); Base (topology); Charge carrier; Stress (linguistics); Electron; Bipolar junction transistor; Current (fluid); Electrical engineering; Voltage; Transistor; Physics; Engineering","score_opus":0.01849762290706562,"score_gpt":0.22605276731509952,"score_spread":0.2075551444080339,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2092848553","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9983771,0.0008439321,0.00041047283,0.00002599097,0.000009911247,0.0000034085513,0.000043472297,0.000030704974,0.00025504173],"genre_scores_gemma":[0.998985,0.00027631695,0.0001455484,0.000016482722,0.000008344342,0.0000025490683,0.00007347403,0.0000084250805,0.0004837981],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998596,0.000016324715,0.000009473662,0.000022108203,0.000050101095,0.00004249325],"domain_scores_gemma":[0.99933904,0.0002382343,0.00013914079,0.00006440192,0.00015652718,0.00006259706],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00017613696,0.00024761856,0.00021147323,0.00019734602,0.00014413515,0.00025649898,0.00011317986,0.00033314122,0.00085757906],"category_scores_gemma":[0.00082578097,0.00011995207,0.00023478322,0.00016126478,0.00028453016,0.00041017268,0.00015293507,0.00024716076,0.0002120353],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00038691293,0.000056973844,0.0034320392,0.00007083588,0.000033924993,0.00020456131,0.00014828317,0.00081285456,0.9878714,0.00004090208,0.00006825103,0.0068730162],"study_design_scores_gemma":[0.000029897476,0.0022698876,0.05943041,0.0000122424435,0.000091008355,0.00085401785,0.00012938707,0.0046993345,0.93146944,0.00012537673,0.0008687752,0.000020225709],"about_ca_topic_score_codex":0.000759541,"about_ca_topic_score_gemma":0.0010928998,"teacher_disagreement_score":0.00085757906,"about_ca_system_score_codex":0.00019534827,"about_ca_system_score_gemma":0.0000861102,"threshold_uncertainty_score":0.0028689504},"labels":[],"label_agreement":null},{"id":"W2093392532","doi":"10.1142/s0218625x03005360","title":"Carrier Concentrations and Drift Currents in the Depletion Region of a p–n Junction","year":2003,"lang":"en","type":"article","venue":"Surface Review and Letters","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"CARE Canada","funders":"","keywords":"Depletion region; Biasing; Diffusion; Electron; Semiconductor; Constant (computer programming); Current (fluid); Reverse bias; p–n junction; Voltage; Condensed matter physics; Physics; Electron mobility; Materials science; Chemistry; Optoelectronics; Quantum mechanics; Thermodynamics; Computer science","score_opus":0.017993361333610843,"score_gpt":0.23882164091414435,"score_spread":0.2208282795805335,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2093392532","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.85573757,0.009567354,0.08833815,0.0019006496,0.00023054112,0.000038308335,0.0002503543,0.00024045224,0.043696564],"genre_scores_gemma":[0.98343074,0.0024507719,0.008916573,0.00016950221,0.000041165986,0.000022896986,0.00006467252,0.000026365684,0.0048774406],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999074,0.0000139081685,0.000004725423,0.000025387315,0.00003694255,0.0000115887715],"domain_scores_gemma":[0.99983275,0.00009488441,0.00002783001,0.000010768933,0.0000290632,0.0000047067706],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0002942956,0.00015480764,0.00020296007,0.00039115123,0.0003218287,0.00056842796,0.0005916784,0.00062203396,0.0012456576],"category_scores_gemma":[0.0008158234,0.00021106229,0.00020413732,0.0003356079,0.0006581148,0.0011143502,0.00020522575,0.000510345,0.00036966082],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0002578673,0.00011922905,0.0045989654,0.0005101134,0.000049814105,0.0014550528,0.0010852643,0.09025238,0.52286655,0.34456158,0.002787071,0.03145615],"study_design_scores_gemma":[0.000066963876,0.00039255494,0.010158639,0.00012007397,0.00008727407,0.0024082959,0.00048718066,0.47017172,0.31771234,0.17223898,0.026029626,0.0001264091],"about_ca_topic_score_codex":0.00085614243,"about_ca_topic_score_gemma":0.0006870679,"teacher_disagreement_score":0.0012456576,"about_ca_system_score_codex":0.0005342965,"about_ca_system_score_gemma":0.00018296768,"threshold_uncertainty_score":0.00416708},"labels":[],"label_agreement":null},{"id":"W2095188740","doi":"10.1117/12.548006","title":"Low-frequency noise in SiGeC-based pMOSFETs","year":2004,"lang":"en","type":"article","venue":"Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":7,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McMaster University","funders":"","keywords":"MOSFET; Threshold voltage; Noise (video); Physics; Sigma; Electrical engineering; Infrasound; Materials science; Optoelectronics; Electronic engineering; Voltage; Transistor; Acoustics; Computer science; Engineering","score_opus":0.011808763023471013,"score_gpt":0.22567955796491368,"score_spread":0.21387079494144268,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2095188740","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9917325,0.0004180421,0.0066953236,0.000035805166,0.0000059133567,0.000006804759,0.00009634748,0.000083124876,0.0009260528],"genre_scores_gemma":[0.9981604,0.00008093036,0.0012064195,0.0000088314555,0.000004620757,0.000005754817,0.000074165015,0.0000062799154,0.00045254934],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99985623,0.000017653943,0.0000057809116,0.00004420384,0.000059219226,0.000016832133],"domain_scores_gemma":[0.9998202,0.0000945903,0.000026641568,0.00001519019,0.000035119952,0.000008213521],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00016665118,0.00023484949,0.00019951671,0.0002977483,0.00015452286,0.0002231709,0.00020154324,0.00028507947,0.00043724792],"category_scores_gemma":[0.00062200933,0.000096691816,0.00013884516,0.00029263226,0.00024452314,0.00027484144,0.00011220007,0.000110942245,0.00012895608],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0008271384,0.00008885616,0.024327599,0.0002211884,0.00004810663,0.00085244945,0.0002159107,0.044519965,0.9047798,0.0015200671,0.00025597468,0.022342924],"study_design_scores_gemma":[0.000033857843,0.0009831502,0.07778575,0.000040635918,0.00008539448,0.0008309131,0.00015138979,0.2937104,0.62329847,0.0010470671,0.0019954774,0.000037516766],"about_ca_topic_score_codex":0.0021237028,"about_ca_topic_score_gemma":0.0027181336,"teacher_disagreement_score":0.0021237028,"about_ca_system_score_codex":0.00039640756,"about_ca_system_score_gemma":0.00012956162,"threshold_uncertainty_score":0.004222691},"labels":[],"label_agreement":null},{"id":"W2099063072","doi":"10.1109/newcas.2011.5981278","title":"Silicon-die thermal monitoring using embedded sensor cells unit","year":2011,"lang":"en","type":"article","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":3,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Université du Québec à Trois-Rivières; Université du Québec en Outaouais","funders":"Natural Sciences and Engineering Research Council of Canada; CMC Microsystems","keywords":"Very-large-scale integration; Microelectromechanical systems; Die (integrated circuit); Chip; Integrated circuit; Thermal; Electronic engineering; Materials science; Stack (abstract data type); Computer science; Temperature measurement; Silicon; Electrical engineering; Engineering; Optoelectronics; Nanotechnology","score_opus":0.08927017345554404,"score_gpt":0.26331331654443263,"score_spread":0.17404314308888857,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2099063072","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.73199654,0.000914876,0.25701675,0.00009774757,0.00020402152,0.00018819538,0.00073892786,0.0029963104,0.005846614],"genre_scores_gemma":[0.9083517,0.00022078722,0.08793329,0.000060024402,0.000019202322,0.00007128883,0.00020968364,0.000044174543,0.0030898727],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99959546,0.00004293592,0.000015306237,0.00011061166,0.0002134877,0.000022258384],"domain_scores_gemma":[0.9995882,0.00008719809,0.00005426317,0.00006866746,0.00017888201,0.000022843675],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00019417297,0.00032422744,0.00037598427,0.00033224805,0.00013155975,0.0002752576,0.0007115544,0.00030668252,0.0014694304],"category_scores_gemma":[0.0004725832,0.00014696032,0.00012286786,0.00036379969,0.00012877422,0.00047165292,0.00020141684,0.00021873348,0.00042202466],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00038205995,0.00013908687,0.003892922,0.00023395788,0.000046279478,0.00014361777,0.000107284344,0.0051234774,0.89404064,0.00084627693,0.0008616771,0.09418278],"study_design_scores_gemma":[0.000022421124,0.00043547316,0.0053418246,0.000010899571,0.000036088863,0.0002563643,0.000032610384,0.07374103,0.91654027,0.00014314713,0.003420374,0.000019626472],"about_ca_topic_score_codex":0.00027681215,"about_ca_topic_score_gemma":0.00051442557,"teacher_disagreement_score":0.0014694304,"about_ca_system_score_codex":0.00024848228,"about_ca_system_score_gemma":0.00016628912,"threshold_uncertainty_score":0.004915774},"labels":[],"label_agreement":null},{"id":"W2099787780","doi":"10.1142/s0219477501000202","title":"STATISTICAL SIMULATIONS OF THE LOW-FREQUENCY NOISE IN POLYSILICON EMITTER BIPOLAR TRANSISTORS USING A MODEL BASED ON GENERATION-RECOMBINATION CENTERS","year":2001,"lang":"en","type":"article","venue":"Fluctuation and Noise Letters","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":9,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McMaster University","funders":"","keywords":"Noise (video); Common emitter; Superposition principle; Bipolar junction transistor; Physics; Range (aeronautics); Computational physics; Transistor; Materials science; Voltage; Optoelectronics; Quantum mechanics","score_opus":0.022662665012966415,"score_gpt":0.24255959271012795,"score_spread":0.21989692769716154,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2099787780","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.8546282,0.00033383383,0.13907869,0.0003744644,0.000043132375,0.00005956191,0.0002389542,0.00025176135,0.004991519],"genre_scores_gemma":[0.9932672,0.00014660982,0.00527572,0.00005308327,0.000016994674,0.000073263225,0.00012502541,0.000038474835,0.0010035995],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99980015,0.00006550329,0.000009323494,0.000027448548,0.0000611324,0.00003651869],"domain_scores_gemma":[0.9987186,0.00089175266,0.00013129308,0.000063807856,0.00013914648,0.000055317665],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0006947165,0.00042846057,0.0005638271,0.0005525953,0.00040247256,0.0006495478,0.00078211207,0.00084465975,0.00084513787],"category_scores_gemma":[0.0020166882,0.0003500092,0.00065281184,0.0005665041,0.00061819237,0.0008689703,0.00022418646,0.0005281959,0.00014562979],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000015002053,0.00001096586,0.00055050204,0.0000066571015,0.0000074465115,0.000021770376,0.000010438838,0.99676776,0.00077702105,0.0014384621,0.000034649867,0.0003593154],"study_design_scores_gemma":[0.0000014285948,0.0000032781263,0.00008139152,4.9059497e-7,9.034721e-7,0.0000016893252,0.0000012622645,0.9996265,0.00008300196,0.00018517532,0.000013796782,0.000001073997],"about_ca_topic_score_codex":0.009120177,"about_ca_topic_score_gemma":0.0061256834,"teacher_disagreement_score":0.009120177,"about_ca_system_score_codex":0.00094142987,"about_ca_system_score_gemma":0.00061145826,"threshold_uncertainty_score":0.018134177},"labels":[],"label_agreement":null},{"id":"W2101154315","doi":"10.1021/nl0727314","title":"Significant Enhancement of Hole Mobility in [110] Silicon Nanowires Compared to Electrons and Bulk Silicon","year":2008,"lang":"en","type":"article","venue":"Nano Letters","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":98,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Electron mobility; Silicon; Electron; Materials science; Silicon nanowires; Phonon; Nanowire; Condensed matter physics; Optoelectronics; Nanotechnology; Physics","score_opus":0.017492967249587172,"score_gpt":0.23110804182194628,"score_spread":0.2136150745723591,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2101154315","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9985209,0.00018167384,0.0005731824,0.000016918228,0.000005782751,0.0000018141757,0.000023581893,0.000013768413,0.00066244084],"genre_scores_gemma":[0.99804175,0.00015828287,0.00074379554,0.000006392447,0.0000040100354,0.0000041173666,0.000061608465,0.00000512925,0.0009748314],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99997175,0.0000021418016,0.000001458505,0.000008953388,0.000009611309,0.0000060741377],"domain_scores_gemma":[0.9999546,0.000018926774,0.000009332193,0.0000033150734,0.0000070028473,0.000006881213],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000050063598,0.00014480493,0.000097235585,0.00009644686,0.00007927952,0.00018299367,0.00010422914,0.00012390628,0.0005554691],"category_scores_gemma":[0.00011394231,0.000097430224,0.0000797326,0.00006499388,0.00013129044,0.00014638997,0.000097441836,0.00008553585,0.000093738214],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000042039916,0.000005974408,0.0009924284,0.000026710197,0.000004780023,0.0000701723,0.000026547921,0.00019259937,0.99696535,0.00022589957,0.000030129018,0.0014173671],"study_design_scores_gemma":[0.000014479126,0.00021291798,0.008509275,0.000008079871,0.000022590735,0.00022824518,0.00005621914,0.0051182895,0.9843113,0.0002475169,0.0012639039,0.0000071785844],"about_ca_topic_score_codex":0.0005456049,"about_ca_topic_score_gemma":0.001071179,"teacher_disagreement_score":0.0005554691,"about_ca_system_score_codex":0.00010243984,"about_ca_system_score_gemma":0.0000895778,"threshold_uncertainty_score":0.0018581748},"labels":[],"label_agreement":null},{"id":"W2103799265","doi":"10.1109/newcas.2004.1359003","title":"A normalized intrinsic delay model of static CMOS complex gates for deep submicron technologies","year":2004,"lang":"en","type":"article","venue":"The 2nd Annual IEEE Northeast Workshop on Circuits and Systems, 2004. NEWCAS 2004.","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":8,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Royal Military College of Canada","funders":"","keywords":"CMOS; Logic gate; Transistor; Computer science; Electronic engineering; Topology (electrical circuits); Series (stratigraphy); Algorithm; Electrical engineering; Engineering; Voltage","score_opus":0.047390459493608386,"score_gpt":0.2655859688484093,"score_spread":0.21819550935480092,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2103799265","genre_codex":"methods","genre_gemma":"methods","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"methods","genre_consensus":"methods","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.05088442,0.0003345821,0.944186,0.00007054018,0.000031681928,0.00002510675,0.00022851727,0.00072361,0.0035156533],"genre_scores_gemma":[0.8502493,0.00077549554,0.14237918,0.00009285932,0.000030380123,0.00008838983,0.0004212717,0.0002577611,0.0057054157],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9997986,0.000028147946,0.000010050903,0.000049319886,0.000092156006,0.000021777945],"domain_scores_gemma":[0.9996105,0.00014727775,0.00006103855,0.00007191618,0.00009565458,0.000013699069],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00027562262,0.0006128066,0.000281213,0.00040704833,0.00021349614,0.0005660202,0.0010626328,0.00040281782,0.0012344633],"category_scores_gemma":[0.0013316396,0.00021503509,0.00038361383,0.00039473234,0.0002942151,0.0012291389,0.00026314272,0.0005464751,0.0004455409],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000046064615,0.000017063116,0.00077484763,0.000051650815,0.000017041957,0.00007406332,0.00006089658,0.9190876,0.034505524,0.023699854,0.00058658357,0.02107881],"study_design_scores_gemma":[0.0000017711545,0.000022457807,0.00016128254,0.000002814666,0.000006548971,0.00004733466,0.0000041671524,0.99117905,0.0046521104,0.0024214808,0.0014956245,0.0000052917317],"about_ca_topic_score_codex":0.0033763347,"about_ca_topic_score_gemma":0.0036707106,"teacher_disagreement_score":0.0033763347,"about_ca_system_score_codex":0.0012295686,"about_ca_system_score_gemma":0.0007719175,"threshold_uncertainty_score":0.008921206},"labels":[],"label_agreement":null},{"id":"W2104636536","doi":"10.1109/pccon.1993.264249","title":"Further refinements to an optimum gate drive for high power GTO thyristors","year":2002,"lang":"en","type":"article","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":3,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Toronto; Sault Area Hospital","funders":"","keywords":"Thyristor; Gate turn-off thyristor; Gate driver; Electrical engineering; Power (physics); Gate equivalent; Power semiconductor device; Logic gate; MOSFET; AND gate; Transistor; Electronic engineering; Integrated gate-commutated thyristor; Engineering; Computer science; Gate oxide; Voltage; Physics","score_opus":0.02354125301417965,"score_gpt":0.2393815847546891,"score_spread":0.21584033174050946,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2104636536","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.09612518,0.0010084604,0.8575263,0.0014907534,0.00065387477,0.00050160714,0.0002788852,0.0026786092,0.03973632],"genre_scores_gemma":[0.5285844,0.0006134121,0.43944967,0.00055842224,0.00023997568,0.00021303025,0.00029562027,0.00056061585,0.029484874],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9995442,0.00006060818,0.000044578996,0.00008645771,0.00021928576,0.00004493129],"domain_scores_gemma":[0.9995271,0.00010470657,0.000043631713,0.00014662601,0.00015801312,0.000019996543],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00033750047,0.00042860315,0.00032091726,0.00026323207,0.00041635893,0.00088997366,0.0009929049,0.0005979648,0.0050323303],"category_scores_gemma":[0.0014144152,0.0002995475,0.00061398547,0.00019685682,0.00034634836,0.0010561428,0.00031525112,0.0010094017,0.00094173086],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0009848387,0.0002777947,0.00214994,0.00063059764,0.000103380175,0.00072949444,0.0005759519,0.036762383,0.55439705,0.08511154,0.010307422,0.3079697],"study_design_scores_gemma":[0.0003132539,0.0016087804,0.006794251,0.00014909907,0.00017426269,0.0021561598,0.00017218567,0.2996573,0.3495917,0.037251186,0.3019468,0.00018508799],"about_ca_topic_score_codex":0.0015085075,"about_ca_topic_score_gemma":0.0034664895,"teacher_disagreement_score":0.0050323303,"about_ca_system_score_codex":0.0005853212,"about_ca_system_score_gemma":0.0004046975,"threshold_uncertainty_score":0.016834795},"labels":[],"label_agreement":null},{"id":"W2105854516","doi":"10.1109/ted.2007.902867","title":"A Self-Consistent Full 3-D Real-Space NEGF Simulator for Studying Nonperturbative Effects in Nano-MOSFETs","year":2007,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":146,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Physics; Discretization; Quantum simulator; Nanowire; Computation; Non-equilibrium thermodynamics; Topology (electrical circuits); Quantum computer; Quantum; Statistical physics; Quantum mechanics; Computational physics; Algorithm; Computer science; Mathematics; Mathematical analysis","score_opus":0.012556831209082488,"score_gpt":0.2583139032396246,"score_spread":0.24575707203054212,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2105854516","genre_codex":"methods","genre_gemma":"methods","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"methods","genre_consensus":"methods","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.2646944,0.00018246818,0.7147296,0.0004417417,0.00008693169,0.00027391824,0.0013125624,0.003190537,0.015087793],"genre_scores_gemma":[0.7497337,0.00015228603,0.24409327,0.00017400335,0.000016449601,0.00068527635,0.0007928917,0.0004918704,0.0038602513],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9998994,0.000029810095,0.0000038185644,0.000010756861,0.00004436171,0.000011866687],"domain_scores_gemma":[0.99952304,0.00029301838,0.000024583569,0.000053699343,0.00007564889,0.000030046056],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00041405158,0.0004014328,0.0005390694,0.00025657553,0.00041852568,0.00049848313,0.0013529023,0.001105949,0.0039282567],"category_scores_gemma":[0.0010764089,0.0002890939,0.00047206494,0.00028967106,0.00046306508,0.00059322,0.00035979165,0.000528781,0.0004034835],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000030018335,0.000035793488,0.00042727726,0.00003586976,0.000013360134,0.00006780528,0.000049628274,0.98642576,0.0037694615,0.0055776727,0.00039682235,0.0031704472],"study_design_scores_gemma":[0.000008112743,0.0000073279875,0.00003753882,0.0000011382701,0.00000133274,0.0000060435577,0.0000036878375,0.9983278,0.0005007329,0.0007169108,0.00038680818,0.000002685247],"about_ca_topic_score_codex":0.0049390066,"about_ca_topic_score_gemma":0.0045698215,"teacher_disagreement_score":0.0049390066,"about_ca_system_score_codex":0.0008621073,"about_ca_system_score_gemma":0.0011952404,"threshold_uncertainty_score":0.013141274},"labels":[],"label_agreement":null},{"id":"W2106398855","doi":"10.1109/ccece.2006.277366","title":"Performance Evaluation and Optimization of Full Adders with Single-Electron Technology","year":2006,"lang":"en","type":"article","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Windsor","funders":"","keywords":"Adder; Reliability (semiconductor); Computer science; Logic gate; Electronic engineering; Set (abstract data type); Logic optimization; Power (physics); Logic synthesis; Circuit reliability; Electrical engineering; Algorithm; CMOS; Engineering; Physics","score_opus":0.00968933486556647,"score_gpt":0.20908673386603388,"score_spread":0.1993973990004674,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2106398855","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9607885,0.0026309614,0.029771345,0.00015971936,0.000027832832,0.000022934195,0.0002304273,0.0004432792,0.0059250062],"genre_scores_gemma":[0.989595,0.00052376976,0.008372364,0.000015275058,0.000010216209,0.000011644613,0.00013971876,0.00003353084,0.0012984585],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9997323,0.00004513707,0.00001591241,0.00003474039,0.00012573219,0.000046128825],"domain_scores_gemma":[0.99953055,0.00025556347,0.00006251764,0.00004709121,0.000089861474,0.000014445277],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00032856202,0.00048397196,0.00037246168,0.0003795327,0.00023666164,0.0005570557,0.00054092804,0.0003543593,0.0014068385],"category_scores_gemma":[0.0012773861,0.00017303028,0.00021113032,0.00052266306,0.00016734273,0.00078736985,0.00019163128,0.00014885608,0.00024765],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.001163185,0.000103875194,0.005177951,0.00052110397,0.00016683195,0.0003229169,0.000078750076,0.62756914,0.2588051,0.008548437,0.0013094244,0.09623334],"study_design_scores_gemma":[0.000038828504,0.0010968787,0.004282183,0.000021228696,0.00011685508,0.00033946807,0.000058803773,0.76640934,0.22288556,0.0022828854,0.0024316097,0.00003632441],"about_ca_topic_score_codex":0.00070953614,"about_ca_topic_score_gemma":0.0013168718,"teacher_disagreement_score":0.0014068385,"about_ca_system_score_codex":0.00047256672,"about_ca_system_score_gemma":0.0003486975,"threshold_uncertainty_score":0.0047063828},"labels":[],"label_agreement":null},{"id":"W2107302671","doi":"10.1149/1.2728880","title":"Strained Silicon-On-Insulator - Fabrication and Characterization","year":2007,"lang":"en","type":"article","venue":"ECS Transactions","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":14,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Advanced Micro Devices (Canada)","funders":"","keywords":"Materials science; Optoelectronics; Silicon on insulator; Wafer; Fabrication; Epitaxy; Annealing (glass); Transistor; Electron mobility; Silicon; Layer (electronics); Oxide; Buffer (optical fiber); Nanotechnology; Electrical engineering; Composite material","score_opus":0.012322553592839064,"score_gpt":0.22656440743936015,"score_spread":0.21424185384652109,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2107302671","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.98649883,0.00041091215,0.007370419,0.000026483474,0.000019521993,0.00008449098,0.002234746,0.00013834912,0.00321619],"genre_scores_gemma":[0.9812009,0.0005500713,0.012364187,0.000024690176,0.00000770233,0.00010500166,0.0024953703,0.000032088756,0.003220054],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999286,0.0000045694105,0.0000067179117,0.000015097554,0.00003292735,0.000012205704],"domain_scores_gemma":[0.99981886,0.000022287746,0.000034092594,0.000031559855,0.00007494569,0.00001822351],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00014103377,0.0002311736,0.00017802586,0.00021884321,0.000139526,0.00021939665,0.00023479911,0.00018165715,0.002149072],"category_scores_gemma":[0.0001849104,0.000094014744,0.000067487,0.00029366164,0.00011145544,0.00016788903,0.00010775344,0.0001644769,0.00067589985],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00002970705,0.000010341065,0.0006250014,0.000046869074,0.0000036466613,0.00008709631,0.000027938213,0.0001505758,0.9971807,0.00012399323,0.000096060474,0.0016180112],"study_design_scores_gemma":[0.0000070635333,0.00019613527,0.0145872515,0.0000059142376,0.000010739104,0.00018187355,0.00008693445,0.0029914235,0.9769404,0.00007655363,0.0049080863,0.0000076636725],"about_ca_topic_score_codex":0.0006414387,"about_ca_topic_score_gemma":0.0013230074,"teacher_disagreement_score":0.002149072,"about_ca_system_score_codex":0.00010614812,"about_ca_system_score_gemma":0.00013834177,"threshold_uncertainty_score":0.007189393},"labels":[],"label_agreement":null},{"id":"W2108557958","doi":"10.1109/soi.1989.69818","title":"Accumulation mode transistors for silicon-on-insulator circuits","year":2003,"lang":"en","type":"article","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Nortel (Canada)","funders":"","keywords":"Transistor; Silicon on insulator; Transconductance; Electronic circuit; Materials science; Optoelectronics; Silicon; Thin-film transistor; Layer (electronics); Electrical engineering; Electronic engineering; Nanotechnology; Engineering; Voltage","score_opus":0.04948146699141682,"score_gpt":0.2944602852940814,"score_spread":0.2449788183026646,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2108557958","genre_codex":"other","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.025710965,0.1204108,0.21651128,0.006362199,0.016055703,0.0007633866,0.00273599,0.0056716795,0.605778],"genre_scores_gemma":[0.19967961,0.07422847,0.16294311,0.0022285953,0.0044816732,0.0007682591,0.0026783787,0.0007476155,0.5522443],"study_design_codex":"theoretical_or_conceptual","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99991083,0.00001548313,0.000006471476,0.000015420825,0.000040704555,0.000011197885],"domain_scores_gemma":[0.9999157,0.00002593503,0.000008057793,0.000012164271,0.000028547911,0.000009593189],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00012707102,0.0006577308,0.00032153432,0.00041296834,0.00028911428,0.0008566872,0.00058087514,0.00046393412,0.06041235],"category_scores_gemma":[0.000314824,0.00016630862,0.00027850614,0.00048205347,0.00022699987,0.0009825559,0.0003948853,0.00075152045,0.011472251],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00016749198,0.000110393354,0.00039311472,0.0025997772,0.000049082108,0.0006702344,0.0002440338,0.004546042,0.07695697,0.32983017,0.25532177,0.32911092],"study_design_scores_gemma":[0.000024169469,0.00015215106,0.0002778621,0.00015165967,0.00002841075,0.0007758687,0.00002585378,0.00497313,0.007916638,0.027290974,0.958363,0.00002036852],"about_ca_topic_score_codex":0.00024617746,"about_ca_topic_score_gemma":0.0009800737,"teacher_disagreement_score":0.06041235,"about_ca_system_score_codex":0.00057600177,"about_ca_system_score_gemma":0.00022381762,"threshold_uncertainty_score":0.20209944},"labels":[],"label_agreement":null},{"id":"W2110141908","doi":"10.1109/dftvs.2002.1173497","title":"Effect of static power dissipation in burn-in environment on yield of VLSI","year":2003,"lang":"en","type":"article","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":2,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Burn-in; Dissipation; CMOS; Leakage (economics); Scaling; Materials science; Voltage; Electrical engineering; Atmospheric temperature range; Yield (engineering); Optoelectronics; Electronic engineering; Engineering physics; Engineering; Composite material; Physics; Thermodynamics; Mathematics","score_opus":0.008802661013523772,"score_gpt":0.22746812835842026,"score_spread":0.21866546734489647,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2110141908","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9955895,0.0004062692,0.0025990144,0.00004937364,0.000011422605,0.0000034949087,0.000062490486,0.000097448356,0.0011809944],"genre_scores_gemma":[0.99926597,0.0000916809,0.00030735612,0.000011254451,0.0000037326072,0.000002092286,0.000043242657,0.000022442317,0.0002522917],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998325,0.000020894042,0.000007769562,0.000027094888,0.000054593726,0.00005709208],"domain_scores_gemma":[0.99945575,0.00023563858,0.00011919214,0.00006213673,0.00009118598,0.000036197674],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00014289464,0.0002947317,0.00022820666,0.00013262394,0.00023805957,0.00028410132,0.000243421,0.00017525961,0.0014287082],"category_scores_gemma":[0.00092254527,0.00016364,0.00016206822,0.00023192645,0.0002769906,0.00043463032,0.00023800011,0.00021286725,0.0002291479],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0016952977,0.0001232625,0.024019735,0.00019559819,0.00009861358,0.00093694637,0.00026938363,0.066904455,0.8709785,0.00085223827,0.0006517571,0.033274166],"study_design_scores_gemma":[0.000018690846,0.0020526499,0.050098456,0.000020087187,0.00011445699,0.0006740561,0.00017712795,0.0632649,0.88136935,0.00048106327,0.0016994411,0.000029769863],"about_ca_topic_score_codex":0.0003065843,"about_ca_topic_score_gemma":0.00064704753,"teacher_disagreement_score":0.0014287082,"about_ca_system_score_codex":0.00029447075,"about_ca_system_score_gemma":0.00010376017,"threshold_uncertainty_score":0.004779458},"labels":[],"label_agreement":null},{"id":"W2111395824","doi":"10.1109/spi.2011.5898858","title":"Modelling semiconductor junctions including nonlinear capacitive effects using neural networks","year":2011,"lang":"en","type":"article","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Carleton University","funders":"","keywords":"Artificial neural network; Capacitive sensing; Nonlinear system; Computer science; Semiconductor; Resistive touchscreen; Spice; Process (computing); Memristor; Diode; Electronic engineering; Semiconductor device modeling; Semiconductor device; Artificial intelligence; Materials science; Engineering; Electrical engineering; CMOS; Nanotechnology; Physics","score_opus":0.09499937358234276,"score_gpt":0.2531874619037552,"score_spread":0.15818808832141243,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2111395824","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.10749002,0.0007305442,0.86888385,0.0003339273,0.00011625829,0.00009437329,0.00015294169,0.00058670156,0.021611333],"genre_scores_gemma":[0.8974243,0.001145645,0.08671555,0.00012927873,0.000043209024,0.00016994958,0.00012289423,0.000095233394,0.014153958],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9998683,0.000023985758,0.0000074011764,0.000024544099,0.00006075569,0.000014943289],"domain_scores_gemma":[0.99980825,0.00009985492,0.000022784558,0.000022819502,0.000038684648,0.0000075609837],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00022249123,0.00041263623,0.0003786991,0.00025958236,0.00030625972,0.0005311739,0.00097327854,0.00096013607,0.0014629643],"category_scores_gemma":[0.00073275436,0.00033094749,0.0004985815,0.00033523314,0.0004163891,0.0012925669,0.0003937634,0.0006201749,0.0003363653],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000020095626,0.000022282216,0.00022410585,0.00006448766,0.000017944623,0.00008982552,0.00005200269,0.96651477,0.014466713,0.010285404,0.00023011367,0.008012214],"study_design_scores_gemma":[0.00000147249,0.0000068072895,0.000029674578,0.000002245489,0.0000030495662,0.0000098864,0.0000027859398,0.9971629,0.0012940216,0.0010697468,0.00041446244,0.000002844146],"about_ca_topic_score_codex":0.0029210143,"about_ca_topic_score_gemma":0.004930044,"teacher_disagreement_score":0.0029210143,"about_ca_system_score_codex":0.00052067905,"about_ca_system_score_gemma":0.0005376168,"threshold_uncertainty_score":0.005807996},"labels":[],"label_agreement":null},{"id":"W2112519719","doi":"10.1109/ccece.2003.1226385","title":"Low temperature performance of operational amplifiers for space applications","year":2004,"lang":"en","type":"article","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":10,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"University of Waterloo","keywords":"Operational amplifier; Amplifier; Input offset voltage; Current sense amplifier; BiCMOS; Offset (computer science); Electrical engineering; Voltage; Transistor array; Bandwidth (computing); CMOS; Electronic engineering; Materials science; Computer science; Optoelectronics; Engineering; Transistor; Telecommunications","score_opus":0.010411241297758866,"score_gpt":0.23020091456943545,"score_spread":0.2197896732716766,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2112519719","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9858801,0.0020863884,0.00889768,0.00010286844,0.000027646192,0.000014386587,0.000112310685,0.00023102594,0.0026475969],"genre_scores_gemma":[0.99704856,0.0003207551,0.0012416658,0.000017527545,0.000011693881,0.000006734471,0.00006532165,0.00003463702,0.0012531814],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.999495,0.00006034083,0.000021788821,0.000076309174,0.0002651406,0.00008140402],"domain_scores_gemma":[0.9987987,0.0003389229,0.00022485509,0.00009208333,0.00050152047,0.00004390158],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00029955833,0.00031705204,0.00026653454,0.0003823245,0.00026344444,0.000576529,0.0003430504,0.00051855226,0.0013725595],"category_scores_gemma":[0.001464262,0.0001322567,0.00014821759,0.00032164928,0.0003518793,0.00044591245,0.00019782568,0.00031139504,0.0007006925],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00038374437,0.000023465216,0.0035753867,0.0000815864,0.000020705,0.00009291477,0.00019500035,0.0043404903,0.9763218,0.00034794776,0.00022633492,0.014390552],"study_design_scores_gemma":[0.000012674064,0.0012621594,0.016174085,0.000024480087,0.00006126262,0.00062200276,0.00013200886,0.018027691,0.96015334,0.00023571667,0.0032650514,0.000029526987],"about_ca_topic_score_codex":0.00072719477,"about_ca_topic_score_gemma":0.00062465627,"teacher_disagreement_score":0.0013725595,"about_ca_system_score_codex":0.00037587155,"about_ca_system_score_gemma":0.00013084301,"threshold_uncertainty_score":0.004591644},"labels":[],"label_agreement":null},{"id":"W2116034886","doi":"10.1111/j.1540-8191.2009.00981.x","title":"Resection of a Mobile Cardiac Metastatic Melanoma","year":2010,"lang":"en","type":"article","venue":"Journal of Cardiac Surgery","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":2,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Health Sciences Centre; University of Toronto; Sunnybrook Health Science Centre","funders":"","keywords":"Medicine; Resection; Melanoma; Metastatic melanoma; Surgery; Cancer research","score_opus":0.015535815483374824,"score_gpt":0.24722176814294525,"score_spread":0.23168595265957043,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2116034886","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9235953,0.006682304,0.0073620323,0.013754928,0.001954152,0.00027160885,0.00071512535,0.00058241194,0.04508214],"genre_scores_gemma":[0.9890631,0.00091132,0.0021029254,0.0010971106,0.0010069184,0.000026187521,0.00014833524,0.000038558228,0.0056056147],"study_design_codex":"case_report","study_design_gemma":"case_report","domain_scores_codex":[0.9997974,0.000011047191,0.00002219481,0.000042776475,0.000048030488,0.00007853165],"domain_scores_gemma":[0.99960274,0.00007087371,0.000058321984,0.00003800698,0.000023157369,0.00020706774],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00014348941,0.001196848,0.0007623822,0.0013209765,0.0015219345,0.00078251807,0.0006724836,0.0028764463,0.0046707923],"category_scores_gemma":[0.00085317576,0.00041752227,0.0010578708,0.00043149554,0.0006180436,0.0010287293,0.0011580505,0.002347658,0.0019129898],"study_design_candidate":"case_report","study_design_consensus":"case_report","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000080266684,0.000022059765,0.001548601,0.000033979082,0.000009297472,0.99052835,0.00003212865,0.00012860005,0.0035910544,0.00018382061,0.00053364533,0.003308192],"study_design_scores_gemma":[0.000025071322,0.00020081624,0.0060373307,0.000021043623,0.000021171245,0.9899839,0.000055431778,0.0008427169,0.0011914796,0.00023502123,0.0013731677,0.000012849241],"about_ca_topic_score_codex":0.0014429601,"about_ca_topic_score_gemma":0.00415392,"teacher_disagreement_score":0.0046707923,"about_ca_system_score_codex":0.0011074598,"about_ca_system_score_gemma":0.00042680107,"threshold_uncertainty_score":0.015625358},"labels":[],"label_agreement":null},{"id":"W2116282977","doi":"10.1109/mnrc.2008.4683390","title":"Performance analysis and improvement for hybrid CMOS-SET circuit architectures","year":2008,"lang":"en","type":"article","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":2,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Windsor","funders":"","keywords":"CMOS; Electronic engineering; Computer science; Electronic circuit; Set (abstract data type); Transistor; Cadence; MOSFET; Electrical engineering; Engineering; Voltage","score_opus":0.023659868124903442,"score_gpt":0.22454518395351483,"score_spread":0.20088531582861138,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2116282977","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.8834411,0.0015044075,0.10012796,0.00024886357,0.000042403968,0.0000428733,0.00018636852,0.0012791556,0.01312684],"genre_scores_gemma":[0.98882186,0.00012098946,0.009634851,0.00001886213,0.000013170439,0.000016177268,0.00007570389,0.00003343745,0.0012649255],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99967265,0.00005395807,0.000014471159,0.000042705644,0.00015193361,0.000064355074],"domain_scores_gemma":[0.9992318,0.0004011334,0.00007311148,0.000114134986,0.00015411757,0.000025628393],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0002422959,0.00045316346,0.00031451893,0.0003782176,0.00029688093,0.00048370633,0.0008447623,0.00037011076,0.0051762494],"category_scores_gemma":[0.00096550205,0.00017573468,0.00033714127,0.00043801471,0.00019652919,0.0010162344,0.00039612633,0.00028122478,0.0004431853],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0016515553,0.00023750798,0.0066586565,0.0004371902,0.00021686748,0.00029702604,0.00018718938,0.5671446,0.2321397,0.016837627,0.0032715006,0.17092054],"study_design_scores_gemma":[0.00003543997,0.000624864,0.0020968763,0.000013614238,0.00007988478,0.00023820777,0.000027501042,0.93431586,0.05833848,0.0025220474,0.0016881517,0.000019084839],"about_ca_topic_score_codex":0.0006323418,"about_ca_topic_score_gemma":0.0012921564,"teacher_disagreement_score":0.0051762494,"about_ca_system_score_codex":0.00054314727,"about_ca_system_score_gemma":0.0002228955,"threshold_uncertainty_score":0.017316282},"labels":[],"label_agreement":null},{"id":"W2118456109","doi":"10.5555/1326073.1326092","title":"Exploiting STI stress for performance","year":2007,"lang":"en","type":"article","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":67,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Advanced Micro Devices (Canada)","funders":"","keywords":"NMOS logic; Shallow trench isolation; PMOS logic; Performance improvement; Computer science; Exploit; Standard cell; Place and route; Electronic engineering; Transistor; Stress (linguistics); Spice; Embedded system; Engineering; Integrated circuit; Layer (electronics); Electrical engineering; Trench; Materials science; Voltage","score_opus":0.022558106393863037,"score_gpt":0.24216409018674778,"score_spread":0.21960598379288473,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2118456109","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9009385,0.001604335,0.08599696,0.00033919152,0.00004469382,0.000029712426,0.00026779465,0.0010843048,0.009694447],"genre_scores_gemma":[0.9868483,0.00032338744,0.011707132,0.000046549652,0.000017200344,0.00001067287,0.00010094184,0.000050145994,0.00089577487],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99981993,0.000024309478,0.000009733557,0.000025886686,0.000075449476,0.00004472784],"domain_scores_gemma":[0.9997538,0.00004929247,0.00007170925,0.000062388164,0.00004795772,0.000014889885],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00019368187,0.0004507706,0.0002553407,0.00024627792,0.00022451888,0.00048148306,0.0004022215,0.00039231262,0.0011956937],"category_scores_gemma":[0.00045444546,0.00020715495,0.00023537021,0.0003992365,0.00026340352,0.00050354,0.0003571897,0.00022285216,0.00039163162],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00011220019,0.00004792347,0.0033541229,0.00014431254,0.00005044273,0.00014221712,0.00007036808,0.1274512,0.8286739,0.002828754,0.00066461903,0.036459822],"study_design_scores_gemma":[0.000041276187,0.0021082761,0.008632085,0.000025813428,0.00015072235,0.0005332748,0.00007586316,0.32284868,0.6494233,0.0028515912,0.013250248,0.00005891091],"about_ca_topic_score_codex":0.0005864473,"about_ca_topic_score_gemma":0.0014733705,"teacher_disagreement_score":0.0011956937,"about_ca_system_score_codex":0.00048885075,"about_ca_system_score_gemma":0.00041507176,"threshold_uncertainty_score":0.004000008},"labels":[],"label_agreement":null},{"id":"W2119122356","doi":"10.1088/0957-4484/25/14/145203","title":"Rigorous analysis of image force barrier lowering in bounded geometries: application to semiconducting nanowires","year":2014,"lang":"en","type":"article","venue":"Nanotechnology","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":7,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Toronto","funders":"","keywords":"Nanowire; Planar; Materials science; Bounded function; Method of image charges; SPHERES; Band diagram; Rectangular potential barrier; Semiconductor; Charge (physics); Geometry; Condensed matter physics; Electronic band structure; Nanotechnology; Physics; Mathematical analysis; Optoelectronics; Mathematics; Quantum mechanics; Computer science","score_opus":0.0067679397228997,"score_gpt":0.23830908238997944,"score_spread":0.23154114266707973,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2119122356","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.25782135,0.001594051,0.700951,0.00055859395,0.000096179574,0.000082404156,0.00021959963,0.00041719893,0.038259562],"genre_scores_gemma":[0.9436542,0.00091679575,0.051160652,0.00011064928,0.000048198144,0.000117247604,0.0001273121,0.00015775854,0.0037072818],"study_design_codex":"theoretical_or_conceptual","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9997415,0.000055175162,0.000009384989,0.00002448696,0.00013178261,0.00003756488],"domain_scores_gemma":[0.9995421,0.00021329234,0.00007005839,0.000058885136,0.00008740387,0.000028234594],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00052830187,0.00067925645,0.00058619137,0.0006963485,0.00046210116,0.00080030935,0.0008751704,0.00090786844,0.0020060102],"category_scores_gemma":[0.0016722876,0.0003065147,0.0005009949,0.00027750953,0.00089273765,0.0009483701,0.00091000623,0.00058080954,0.0003943137],"study_design_candidate":"simulation_or_modeling","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000048257047,0.00007256658,0.00052952836,0.00020587601,0.000030823336,0.0008713819,0.00018201445,0.34692633,0.07149511,0.57024056,0.0011796871,0.008217863],"study_design_scores_gemma":[0.0000060645257,0.000019092096,0.00020677398,0.000014210642,0.000003893278,0.000079328434,0.000026223433,0.96349514,0.0030644652,0.0324351,0.0006394061,0.000010216788],"about_ca_topic_score_codex":0.0012478343,"about_ca_topic_score_gemma":0.0010686157,"teacher_disagreement_score":0.0020060102,"about_ca_system_score_codex":0.0006887374,"about_ca_system_score_gemma":0.0004355764,"threshold_uncertainty_score":0.0067108274},"labels":[],"label_agreement":null},{"id":"W2123766056","doi":"10.1109/tcad.2002.805727","title":"A simplified model for the effect of interfinger metal on maximum temperature rise in a multifinger bipolar transistor","year":2003,"lang":"en","type":"article","venue":"IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":12,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Carleton University","funders":"","keywords":"Common emitter; Bipolar junction transistor; Materials science; Substrate (aquarium); Optoelectronics; Interconnection; Representation (politics); Thermal; Transistor; Reduction (mathematics); Computer science; Thermodynamics; Electrical engineering; Physics; Voltage","score_opus":0.026939785143039307,"score_gpt":0.23499218104106273,"score_spread":0.20805239589802343,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2123766056","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.6368099,0.00081795175,0.34285718,0.00057420245,0.00008633045,0.00014498804,0.00044000655,0.0007366815,0.017532758],"genre_scores_gemma":[0.9887926,0.0002525319,0.007046362,0.00003990669,0.000017145609,0.000076425145,0.000056014494,0.000039688646,0.0036794513],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9998585,0.000030268913,0.0000048372935,0.000025680687,0.000045632052,0.000034938894],"domain_scores_gemma":[0.99981266,0.00009320023,0.000032183743,0.000025975423,0.000019887673,0.000016151565],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0002366127,0.0005354015,0.0006126428,0.00027147873,0.00041884696,0.00059613475,0.0010255987,0.0012425658,0.0018688365],"category_scores_gemma":[0.00086953805,0.00042084875,0.00069475523,0.00030093407,0.0007548001,0.0010520814,0.0003282427,0.00045588936,0.00035223606],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000037948488,0.000015777912,0.00020080553,0.000027507747,0.000007747596,0.00007701933,0.00003969178,0.97628796,0.017522842,0.0047022756,0.0000877344,0.0009926835],"study_design_scores_gemma":[0.0000064089577,0.000023666189,0.00010326739,0.0000017154425,0.00000409776,0.000015387934,0.000002915935,0.9979664,0.0011803211,0.00059594435,0.00009598921,0.000003874919],"about_ca_topic_score_codex":0.005361864,"about_ca_topic_score_gemma":0.0036521156,"teacher_disagreement_score":0.005361864,"about_ca_system_score_codex":0.00097354886,"about_ca_system_score_gemma":0.00071786175,"threshold_uncertainty_score":0.010661304},"labels":[],"label_agreement":null},{"id":"W2125309713","doi":"10.1109/mwscas.2008.4616747","title":"Evaluation of modern MOSFET models for bulk-driven applications","year":2008,"lang":"en","type":"article","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":20,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Memorial University of Newfoundland","funders":"","keywords":"MOSFET; CMOS; Electronic engineering; Power MOSFET; Electrical engineering; Threshold voltage; Short-channel effect; Low voltage; Computer science; Logic gate; Semiconductor device modeling; SIGNAL (programming language); Voltage; Transistor; Engineering","score_opus":0.09940664209454238,"score_gpt":0.29509220739244535,"score_spread":0.19568556529790299,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2125309713","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.54945433,0.00309044,0.38605618,0.0007487258,0.00038760027,0.00032550996,0.0026042599,0.0035141066,0.0538188],"genre_scores_gemma":[0.95638,0.0007635731,0.03830333,0.00007761399,0.000033044224,0.00015373155,0.0006655193,0.00018717867,0.003436051],"study_design_codex":"simulation_or_modeling","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99964476,0.00006532077,0.000015616995,0.000026242591,0.00021086825,0.000037111542],"domain_scores_gemma":[0.9992624,0.00027584305,0.000059757964,0.00007153258,0.0003121508,0.000018300285],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000508407,0.0007323976,0.0005594931,0.00044889993,0.00025896114,0.0004374597,0.0011639666,0.0008603701,0.0029514818],"category_scores_gemma":[0.0016684748,0.00019434837,0.0005189001,0.00055089797,0.0001785268,0.0008548028,0.00022152661,0.0003757807,0.0005484434],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00022359383,0.00007610313,0.0015526691,0.00027899776,0.000057837056,0.00013092933,0.00007601718,0.93640625,0.021534162,0.005837165,0.0034163266,0.030410022],"study_design_scores_gemma":[0.0000124056605,0.00010610208,0.0002923059,0.000011443844,0.000016309375,0.00003154279,0.000013599989,0.9911237,0.005832213,0.000859102,0.0016912713,0.000010099292],"about_ca_topic_score_codex":0.004425165,"about_ca_topic_score_gemma":0.0040861657,"teacher_disagreement_score":0.004425165,"about_ca_system_score_codex":0.000976115,"about_ca_system_score_gemma":0.00059529353,"threshold_uncertainty_score":0.009873688},"labels":[],"label_agreement":null},{"id":"W2125615551","doi":"10.1109/cicc.1988.20858","title":"A simple GaAs MESFET model for circuit simulation reflecting the dependence on device geometry and process","year":2003,"lang":"en","type":"article","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":2,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Nortel (Canada)","funders":"","keywords":"MESFET; Simple (philosophy); Process (computing); Electronic circuit; Sensitivity (control systems); Computer science; Electronic engineering; CAD; Equivalent circuit; Topology (electrical circuits); Electrical engineering; Engineering drawing; Engineering; Field-effect transistor; Transistor; Voltage; Programming language","score_opus":0.08925350816096554,"score_gpt":0.3437596905844971,"score_spread":0.25450618242353157,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2125615551","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.015996091,0.0006236362,0.9592564,0.00026319604,0.0001769512,0.00022471423,0.0021651383,0.0020119802,0.01928193],"genre_scores_gemma":[0.42807418,0.0030184318,0.4728749,0.0004411084,0.00021381435,0.0020107904,0.0041495366,0.0012646788,0.08795259],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99986243,0.000024303094,0.000007976977,0.000025947304,0.00006359985,0.00001571011],"domain_scores_gemma":[0.9998957,0.000034244982,0.000009804757,0.000020649522,0.000034066772,0.0000055250844],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00017131686,0.0007758459,0.00065051427,0.00037619474,0.00038169723,0.0006095126,0.0016385923,0.001374724,0.007615301],"category_scores_gemma":[0.00047515743,0.0004018559,0.0008578991,0.0005980021,0.00021146052,0.0006704942,0.00033509446,0.0009810681,0.0032552967],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000046922563,0.0000503253,0.0004631109,0.00021040649,0.000043496962,0.00029770742,0.00007596126,0.87428224,0.06692991,0.036566135,0.004069236,0.016964516],"study_design_scores_gemma":[0.000007863754,0.000031958047,0.00016606398,0.0000075686316,0.000014712964,0.000085469524,0.000007091591,0.9793975,0.0054712864,0.0033107079,0.011489628,0.000010209846],"about_ca_topic_score_codex":0.0033278607,"about_ca_topic_score_gemma":0.004386229,"teacher_disagreement_score":0.007615301,"about_ca_system_score_codex":0.0005438259,"about_ca_system_score_gemma":0.0006787051,"threshold_uncertainty_score":0.02547568},"labels":[],"label_agreement":null},{"id":"W2125896039","doi":"10.5555/603095.603204","title":"Accurate CMOS bridge fault modeling with neural network-based VHDL saboteurs","year":2001,"lang":"en","type":"article","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":6,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Royal Military College of Canada","funders":"","keywords":"Bridge (graph theory); VHDL; Computer science; Node (physics); CMOS; Voltage; Artificial neural network; Fault (geology); Fault injection; Feed forward; VHDL-AMS; Electronic engineering; Hardware description language; Software; Electrical engineering; Engineering; Embedded system; Artificial intelligence; Control engineering; Field-programmable gate array","score_opus":0.03809565308172981,"score_gpt":0.24899306059304893,"score_spread":0.21089740751131913,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2125896039","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.051739354,0.0001200185,0.9425736,0.00008041678,0.00003940466,0.000035501773,0.0001135358,0.002199114,0.0030991875],"genre_scores_gemma":[0.84450984,0.00017760452,0.1512567,0.000056577348,0.000015799327,0.00011991724,0.00018848815,0.0001270119,0.0035481835],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9998307,0.000027861848,0.000012645752,0.000023298679,0.00008538125,0.000020126785],"domain_scores_gemma":[0.9997662,0.000088857785,0.000026796557,0.000044112774,0.000065274144,0.0000087358585],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00022922788,0.0004163758,0.00030530323,0.00027029484,0.00022345153,0.000516013,0.0011551039,0.00046632768,0.0015150822],"category_scores_gemma":[0.00073974184,0.00022631284,0.0003472382,0.00016161421,0.00023692219,0.0008293616,0.00031253058,0.0005633219,0.00033687122],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00004955647,0.000022344477,0.0003710941,0.00003744495,0.000015453586,0.000038377006,0.000038681468,0.97011614,0.0057489555,0.003039023,0.0003200276,0.020202797],"study_design_scores_gemma":[0.0000024392195,0.000010333768,0.000028029754,0.0000017080348,0.0000028154932,0.0000060189827,0.0000018611794,0.9971921,0.0020278418,0.0003925323,0.00033251932,0.0000017307366],"about_ca_topic_score_codex":0.007058015,"about_ca_topic_score_gemma":0.0071821604,"teacher_disagreement_score":0.007058015,"about_ca_system_score_codex":0.00068069185,"about_ca_system_score_gemma":0.0006049947,"threshold_uncertainty_score":0.014033914},"labels":[],"label_agreement":null},{"id":"W2128631549","doi":"10.1109/icnf.2013.6578876","title":"Low frequency noise in silicon-based devices, circuits and systems","year":2013,"lang":"en","type":"article","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":4,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McMaster University","funders":"","keywords":"Electronic circuit; Electronics; Electronic engineering; Computer science; Noise (video); Electrical engineering; Reliability (semiconductor); Engineering; Power (physics)","score_opus":0.014223991918068358,"score_gpt":0.21341940189081512,"score_spread":0.19919540997274676,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2128631549","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.12956215,0.06032922,0.6665021,0.004859773,0.0015734722,0.00013352375,0.00017676072,0.0007667715,0.13609621],"genre_scores_gemma":[0.8642144,0.02471285,0.07204599,0.001304672,0.0013694476,0.00017746465,0.00013857757,0.00025042522,0.035786048],"study_design_codex":"theoretical_or_conceptual","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99925154,0.00016776992,0.000023165974,0.00009950974,0.00041383549,0.0000441694],"domain_scores_gemma":[0.9992706,0.0004800921,0.00006628336,0.000053790434,0.00011326619,0.00001594385],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000614549,0.00044322034,0.0004906565,0.00079853705,0.00054562395,0.0016601993,0.00050590606,0.0012208143,0.0017367508],"category_scores_gemma":[0.0019689924,0.0002884392,0.00021377194,0.00063489407,0.0018567347,0.0011689872,0.0004413076,0.0009280917,0.0006950016],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00015919261,0.000121024335,0.002639909,0.00078539073,0.000052191997,0.0010887475,0.0013048217,0.053640757,0.07850377,0.759416,0.004441605,0.097846605],"study_design_scores_gemma":[0.00003824356,0.00046240765,0.0044188164,0.0005889213,0.00006365134,0.0022809524,0.00056803966,0.2620447,0.03604059,0.6115544,0.081797674,0.00014156685],"about_ca_topic_score_codex":0.0010174792,"about_ca_topic_score_gemma":0.00080625765,"teacher_disagreement_score":0.0017367508,"about_ca_system_score_codex":0.0006995218,"about_ca_system_score_gemma":0.00041726822,"threshold_uncertainty_score":0.0058100224},"labels":[],"label_agreement":null},{"id":"W2130465605","doi":"10.1109/icsict.2001.982038","title":"Modeling of single-transistor latch behavior in partially-depleted (PD) SOI CMOS devices using a concise SOI-SPICE model","year":2005,"lang":"en","type":"article","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Spice; Silicon on insulator; CMOS; Transistor; Semiconductor device modeling; Electronic engineering; Materials science; Optoelectronics; Electrical engineering; Silicon; Engineering; Voltage","score_opus":0.06515214857871197,"score_gpt":0.272589869052326,"score_spread":0.20743772047361403,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2130465605","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.33447218,0.0006863205,0.6475265,0.00028783135,0.000046285626,0.00012256853,0.00077876466,0.0018556392,0.014223929],"genre_scores_gemma":[0.97365475,0.0004671256,0.020986572,0.000062357045,0.000015391339,0.00010996019,0.00021823985,0.00012885917,0.004356806],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99982697,0.00002831146,0.000009458855,0.000024845966,0.00008493969,0.000025537252],"domain_scores_gemma":[0.9997377,0.000085660955,0.000039666622,0.000051116942,0.00007503994,0.000010748959],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00019295266,0.00047646844,0.0005002522,0.00038034384,0.00022372269,0.0004174648,0.0011406878,0.00055833755,0.0012543842],"category_scores_gemma":[0.0006472536,0.0002759242,0.0004932325,0.0002774857,0.0003182986,0.0010414798,0.00022707887,0.000367623,0.00041853788],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00008849914,0.000028711253,0.0010482512,0.000105470746,0.000047208097,0.00019890671,0.00015597961,0.92911875,0.048323374,0.012753471,0.0005161689,0.007615154],"study_design_scores_gemma":[0.0000039175275,0.000046642555,0.0001801902,0.0000036276772,0.000014006585,0.000054994227,0.000011143852,0.99135965,0.0064106737,0.001211799,0.00069864356,0.000004646676],"about_ca_topic_score_codex":0.0021142543,"about_ca_topic_score_gemma":0.0026197957,"teacher_disagreement_score":0.0021142543,"about_ca_system_score_codex":0.00041768074,"about_ca_system_score_gemma":0.00034115775,"threshold_uncertainty_score":0.004203856},"labels":[],"label_agreement":null},{"id":"W2131134703","doi":"10.1109/ccece.2002.1015283","title":"Unified simulation: a new approach to computer aided circuit analysis","year":2003,"lang":"en","type":"article","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Toronto Metropolitan University","funders":"","keywords":"Spice; Computer science; Electronic circuit simulation; Transistor model; Electronic engineering; Linear circuit; Network analysis; Transient (computer programming); Equivalent circuit; Electronic circuit; Nodal analysis; Point (geometry); Transient analysis; Transistor; Circuit extraction; Computer engineering; Transient response; Electrical engineering; Engineering; Voltage; Mathematics","score_opus":0.04961772521272747,"score_gpt":0.25922696793563205,"score_spread":0.20960924272290457,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2131134703","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.0007138517,0.00033117126,0.9936314,0.00006948635,0.000050087052,0.000033176155,0.000038430553,0.0008442201,0.0042882357],"genre_scores_gemma":[0.07123363,0.0019212345,0.91802686,0.00015500354,0.00013010562,0.00048280347,0.00028880144,0.0006042144,0.0071573216],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9991284,0.0002674568,0.000040330488,0.000083033585,0.00042965758,0.000051145507],"domain_scores_gemma":[0.9992273,0.00042434724,0.00003567566,0.00017541966,0.000116144074,0.000021052436],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0010094696,0.0009847948,0.0012812018,0.001534641,0.0006330473,0.0016936259,0.0020718577,0.0010556651,0.007742462],"category_scores_gemma":[0.0026795121,0.0007041465,0.0013470049,0.0012225866,0.001075987,0.00210506,0.0016655362,0.0017432211,0.001831185],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00005482845,0.000051911426,0.00040436082,0.00032664015,0.00014300189,0.000116741794,0.00021485458,0.48524764,0.007687245,0.35857704,0.0056533194,0.14152248],"study_design_scores_gemma":[0.000017930455,0.000045818033,0.00005582634,0.000054621447,0.00003115776,0.000098638106,0.000024644669,0.8968274,0.0029781912,0.052162472,0.047679678,0.000023492928],"about_ca_topic_score_codex":0.0023683514,"about_ca_topic_score_gemma":0.002342037,"teacher_disagreement_score":0.007742462,"about_ca_system_score_codex":0.00079357973,"about_ca_system_score_gemma":0.001296823,"threshold_uncertainty_score":0.025901139},"labels":[],"label_agreement":null},{"id":"W2132037825","doi":"10.1109/tnano.2009.2032918","title":"Nonquasi-Static Effects and the Role of Kinetic Inductance in Ballistic Carbon-Nanotube Transistors","year":2009,"lang":"en","type":"article","venue":"IEEE Transactions on Nanotechnology","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":7,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Alberta","funders":"Sandia National Laboratories; University of Toronto; Connaught Fund; Sharif University of Technology; University of Alberta","keywords":"Kinetic inductance; Transistor; Physics; Inductance; Topology (electrical circuits); Electrical engineering; Quantum mechanics; Engineering","score_opus":0.004507416058674356,"score_gpt":0.195325867811022,"score_spread":0.19081845175234766,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2132037825","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.71195024,0.002047251,0.26062563,0.0005984975,0.00011964313,0.00006419371,0.00010013188,0.0002895038,0.02420493],"genre_scores_gemma":[0.9870504,0.00067317206,0.008805436,0.00006173075,0.000016391607,0.000025984275,0.000030511732,0.00004797231,0.0032883638],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99985147,0.000034823017,0.0000066308826,0.000021530004,0.000056244047,0.00002920283],"domain_scores_gemma":[0.99972135,0.00016204435,0.00004535465,0.000020563291,0.0000313711,0.000019272104],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0003384344,0.00034832704,0.0003847215,0.00024543545,0.00045684687,0.0005450888,0.00063199166,0.00062926003,0.00095979625],"category_scores_gemma":[0.0011070884,0.0003041374,0.00028013057,0.00024845384,0.0007532243,0.0015653028,0.00043326314,0.00033159426,0.0001920205],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00017493911,0.00012542006,0.0020822238,0.0002975755,0.00003505338,0.00097468204,0.00054628996,0.65482295,0.15368232,0.17679945,0.0005775981,0.009881492],"study_design_scores_gemma":[0.000009048744,0.000054281798,0.0004056242,0.000013491207,0.000009409124,0.00014747276,0.000033556516,0.9734249,0.012379726,0.01284062,0.0006613064,0.000020681851],"about_ca_topic_score_codex":0.002228626,"about_ca_topic_score_gemma":0.002862797,"teacher_disagreement_score":0.002228626,"about_ca_system_score_codex":0.0007878025,"about_ca_system_score_gemma":0.00047231137,"threshold_uncertainty_score":0.005715966},"labels":[],"label_agreement":null},{"id":"W2132227366","doi":"10.1109/iscas.2002.1010650","title":"A novel double edge-triggered pulse-clocked TSPC D flip-flop for high-performance and low-power VLSI design applications","year":2003,"lang":"en","type":"article","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":6,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Concordia University","funders":"","keywords":"Flip-flop; Very-large-scale integration; Enhanced Data Rates for GSM Evolution; Computer science; Power (physics); Low-power electronics; Ultra low power; Electronic engineering; Embedded system; Engineering; Power consumption; Physics; Telecommunications","score_opus":0.023812698653182668,"score_gpt":0.23611659683416128,"score_spread":0.2123038981809786,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2132227366","genre_codex":"methods","genre_gemma":"methods","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"methods","genre_consensus":"methods","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.19754925,0.0025530194,0.78819716,0.00053953147,0.0007155665,0.00021304104,0.00035107046,0.0017073028,0.008174088],"genre_scores_gemma":[0.739247,0.00085604814,0.25345802,0.0003612271,0.0001397588,0.00010191999,0.00028623763,0.000041204734,0.005508508],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999206,0.000009016706,0.000006018697,0.00001831206,0.00003585054,0.000010234156],"domain_scores_gemma":[0.99984837,0.00003231669,0.000022046812,0.000022282453,0.000057202964,0.000017698796],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00010529545,0.00019017872,0.00017870155,0.00021885303,0.00024523967,0.0002819838,0.00066181977,0.00042111237,0.0018333032],"category_scores_gemma":[0.00026539926,0.00014227616,0.0001888178,0.00026908686,0.0001848718,0.00040536816,0.00023493392,0.0003328327,0.00028177202],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0005689391,0.00008723303,0.0014930448,0.00045530495,0.00006962914,0.0012862321,0.0000819781,0.014788677,0.67074317,0.008090138,0.005246049,0.29708964],"study_design_scores_gemma":[0.00041589682,0.0028644863,0.0044144937,0.00006877022,0.00023696589,0.007876357,0.00007147876,0.25832504,0.6373249,0.0043139043,0.08400756,0.00008022132],"about_ca_topic_score_codex":0.00032393177,"about_ca_topic_score_gemma":0.000792125,"teacher_disagreement_score":0.0018333032,"about_ca_system_score_codex":0.00019214266,"about_ca_system_score_gemma":0.00034372785,"threshold_uncertainty_score":0.0061329603},"labels":[],"label_agreement":null},{"id":"W2134510501","doi":"10.1109/mtt67880.2005.9387850","title":"Nonlinear HEMT Modeling Using Artificial Neural Network Technique","year":2005,"lang":"en","type":"article","venue":"IEEE MTT-S International Microwave Symposium Digest, 2005.","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":13,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Carleton University","funders":"","keywords":"High-electron-mobility transistor; Artificial neural network; Nonlinear system; Electronic engineering; Transistor; Harmonic; Computer science; Equivalent circuit; Topology (electrical circuits); Engineering; Electrical engineering; Artificial intelligence; Physics; Voltage; Acoustics","score_opus":0.02750809629075107,"score_gpt":0.26222760398467565,"score_spread":0.23471950769392458,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2134510501","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.031937037,0.00042187053,0.9579779,0.00017766638,0.000043461565,0.00004079929,0.00015866365,0.0006112553,0.008631402],"genre_scores_gemma":[0.78519815,0.0013589375,0.18933766,0.000100256584,0.000048767026,0.00023191125,0.00035939232,0.00011722768,0.023247644],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9999167,0.000015063317,0.0000037381524,0.0000146138955,0.000042707758,0.000007320922],"domain_scores_gemma":[0.999946,0.000018623838,0.0000076154215,0.000005960159,0.000020276942,0.0000015698338],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00014077069,0.0002920754,0.00022420529,0.00017745336,0.00013307417,0.0002806101,0.0004429237,0.00044122874,0.0013018028],"category_scores_gemma":[0.0002789047,0.0001612474,0.0002908336,0.00020743404,0.00012361103,0.0005416478,0.00017402883,0.00036351834,0.00039866052],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00003803362,0.00001642114,0.00033377932,0.00008394536,0.000023889519,0.000097967386,0.000033916895,0.92174506,0.034746557,0.007059938,0.00083718426,0.034983356],"study_design_scores_gemma":[8.399135e-7,0.0000044512644,0.000051778992,0.0000015318772,0.0000013667458,0.0000096819285,0.0000011027365,0.99781334,0.0012935661,0.00040185725,0.00041894714,0.0000015040083],"about_ca_topic_score_codex":0.0020106367,"about_ca_topic_score_gemma":0.0026906505,"teacher_disagreement_score":0.0020106367,"about_ca_system_score_codex":0.0003271087,"about_ca_system_score_gemma":0.00024194317,"threshold_uncertainty_score":0.0043549538},"labels":[],"label_agreement":null},{"id":"W2135776200","doi":"10.1109/ccece.2006.277281","title":"Nanoscale Thermal Analysis of Electronic Devices","year":2006,"lang":"en","type":"article","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":3,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Université du Québec à Trois-Rivières","funders":"","keywords":"Nanoelectronics; Nanoscopic scale; Heat transfer; Thermal management of electronic devices and systems; Materials science; Nanotechnology; Thermal; Engineering physics; Heat flow; Phonon; Energy transfer; Mechanical engineering; Engineering; Physics; Mechanics; Thermodynamics","score_opus":0.00581679115166677,"score_gpt":0.20554502581829795,"score_spread":0.19972823466663117,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2135776200","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.16406198,0.017881261,0.66786,0.0017602973,0.00081077556,0.000208224,0.0018517011,0.0013710923,0.1441947],"genre_scores_gemma":[0.94325095,0.004715739,0.03336387,0.00021695191,0.00034039075,0.00023401274,0.0005208793,0.0003862116,0.016971013],"study_design_codex":"simulation_or_modeling","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9997918,0.00002361979,0.0000058662463,0.00003787622,0.00011519686,0.000025628748],"domain_scores_gemma":[0.99991834,0.00003273867,0.000007817233,0.00001896007,0.000018741233,0.0000033472322],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00012720292,0.00032330147,0.0004211052,0.00040855826,0.00031179521,0.00060630706,0.00038098777,0.00042520146,0.0032495016],"category_scores_gemma":[0.000570051,0.00017417375,0.0003669025,0.00024750622,0.0004591052,0.00080738624,0.0003467972,0.00046280646,0.0007799259],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000049566497,0.00008248609,0.0012195986,0.0005754128,0.000083544415,0.00018037797,0.00015756828,0.5146925,0.15456489,0.27405155,0.0054668994,0.048875634],"study_design_scores_gemma":[0.000006798168,0.000027219763,0.0018414141,0.000034551154,0.000010999068,0.00008021992,0.000030115827,0.9232343,0.015592553,0.041791607,0.017330658,0.000019757148],"about_ca_topic_score_codex":0.0010348541,"about_ca_topic_score_gemma":0.0006390711,"teacher_disagreement_score":0.0032495016,"about_ca_system_score_codex":0.000583326,"about_ca_system_score_gemma":0.00030963807,"threshold_uncertainty_score":0.0108706355},"labels":[],"label_agreement":null},{"id":"W2137529702","doi":"10.1109/edmo.2000.919018","title":"Hot carrier effects on the correlation resistance in Si/SiGe heterojunction bipolar transistors","year":2002,"lang":"en","type":"article","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"CMC Microsystems (Canada)","funders":"","keywords":"Heterojunction bipolar transistor; Bipolar junction transistor; Materials science; Optoelectronics; Equivalent series resistance; Noise (video); Common emitter; Stress (linguistics); Heterojunction; Transistor; Topology (electrical circuits); Electrical engineering; Computer science; Engineering; Voltage","score_opus":0.016325170588921096,"score_gpt":0.1948981800626354,"score_spread":0.1785730094737143,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2137529702","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9955575,0.0012919372,0.0022707344,0.00007745515,0.000026710153,0.000008521566,0.000050784605,0.00011211438,0.0006042903],"genre_scores_gemma":[0.9991159,0.00023384372,0.00032269754,0.000012879865,0.000013355417,0.0000030802028,0.000022739572,0.000015664922,0.00025984162],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99977106,0.000051730694,0.000011108109,0.00004573157,0.00007244074,0.00004790411],"domain_scores_gemma":[0.99894017,0.0006347921,0.00017327078,0.000102351594,0.00010707642,0.000042347343],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0003045317,0.0003226379,0.00033035895,0.00024257536,0.00020972527,0.0003962608,0.00029868714,0.00042291667,0.0008442381],"category_scores_gemma":[0.001199878,0.00017527665,0.00023035907,0.00026021348,0.00042058848,0.0006460574,0.00018631137,0.00028765024,0.00020166376],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0005924668,0.00012887688,0.0045776586,0.00016272045,0.000066449036,0.00065247965,0.00039487277,0.013317174,0.964098,0.0006210257,0.00028958856,0.0150986565],"study_design_scores_gemma":[0.00006651912,0.0046276688,0.03147351,0.000025625113,0.0002582443,0.001418603,0.00020647906,0.079539664,0.87941355,0.0008323209,0.0020794752,0.000058386842],"about_ca_topic_score_codex":0.00053110096,"about_ca_topic_score_gemma":0.00080620195,"teacher_disagreement_score":0.0008442381,"about_ca_system_score_codex":0.0002777639,"about_ca_system_score_gemma":0.000109093555,"threshold_uncertainty_score":0.0028242469},"labels":[],"label_agreement":null},{"id":"W2138008752","doi":"10.1109/led.2009.2023382","title":"Low-Frequency Noise Partition of Asymmetric MOS Transistors Operating in Linear Regime","year":2009,"lang":"en","type":"article","venue":"IEEE Electron Device Letters","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":4,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McMaster University","funders":"","keywords":"Transistor; Noise (video); Materials science; Electrical engineering; Flicker noise; Threshold voltage; Infrasound; Electronic engineering; Voltage; Optoelectronics; Physics; Acoustics; Noise figure; Engineering; Computer science; CMOS","score_opus":0.01120058503872795,"score_gpt":0.2355898784611932,"score_spread":0.22438929342246525,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2138008752","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.96287274,0.00019162781,0.03227625,0.00004447196,0.0000132543355,0.000015791093,0.000073151794,0.00012397698,0.004388773],"genre_scores_gemma":[0.9986815,0.000026279133,0.00086999347,0.000007316727,0.0000058645846,0.0000060666357,0.000033282377,0.000010048064,0.00035969674],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999125,0.000011321887,0.000005027958,0.000020075098,0.000035566,0.000015543132],"domain_scores_gemma":[0.9998111,0.00007812524,0.000031686308,0.000025203497,0.000031636093,0.00002224328],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000113065515,0.00031268733,0.00023606491,0.00047325031,0.00021132929,0.0004355722,0.00030037886,0.00022563201,0.0013974919],"category_scores_gemma":[0.00047023772,0.000095749696,0.00021627768,0.00014616121,0.0003558811,0.00034369674,0.00022153043,0.00016977024,0.0002587178],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0010222509,0.00009456627,0.004292046,0.000083541956,0.000037530903,0.0007612929,0.00022753344,0.0335906,0.92764014,0.016433485,0.00019009555,0.015627032],"study_design_scores_gemma":[0.000050789975,0.00053441135,0.016058126,0.000036442492,0.000098327466,0.0011393118,0.00014330717,0.66890335,0.2891797,0.02278895,0.001029499,0.00003777491],"about_ca_topic_score_codex":0.00028744212,"about_ca_topic_score_gemma":0.000321996,"teacher_disagreement_score":0.0013974919,"about_ca_system_score_codex":0.00030947517,"about_ca_system_score_gemma":0.00008266663,"threshold_uncertainty_score":0.0046750903},"labels":[],"label_agreement":null},{"id":"W2139370583","doi":"10.1109/test.2003.1270829","title":"Burn-in temperature projections for deep sub-micron technologies","year":2004,"lang":"en","type":"article","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":19,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Intel Corporation","keywords":"Computer science","score_opus":0.01051915332205173,"score_gpt":0.22810176568057086,"score_spread":0.21758261235851914,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2139370583","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.80240965,0.0033359919,0.12619387,0.0004483775,0.00009911572,0.000050650207,0.009238192,0.0025856276,0.05563859],"genre_scores_gemma":[0.9801666,0.000603709,0.0136381,0.000032431453,0.0000117620575,0.000029536048,0.00264429,0.00013493249,0.0027385815],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9998611,0.00001729587,0.0000037610944,0.000020878904,0.00006126973,0.00003556319],"domain_scores_gemma":[0.9996431,0.000087633394,0.00004184112,0.00003740383,0.00016257759,0.000027481714],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0002742266,0.00039085269,0.00020016533,0.00071030675,0.00020419943,0.0004925822,0.00020563316,0.00030697885,0.0032118692],"category_scores_gemma":[0.0005671905,0.00018521814,0.0004066293,0.00059047004,0.00012099435,0.0006539523,0.00033037752,0.00052859273,0.0014428571],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00090696645,0.000062478946,0.033764593,0.00028983923,0.00007784727,0.00027530524,0.00021762044,0.7729158,0.06537476,0.019270005,0.010803159,0.09604168],"study_design_scores_gemma":[0.000030106869,0.00032572963,0.091548234,0.00005638566,0.00005971021,0.00051287387,0.0002576023,0.8108834,0.057020385,0.011398051,0.027831433,0.00007616104],"about_ca_topic_score_codex":0.0022540928,"about_ca_topic_score_gemma":0.0038501953,"teacher_disagreement_score":0.0032118692,"about_ca_system_score_codex":0.0005938717,"about_ca_system_score_gemma":0.0001836201,"threshold_uncertainty_score":0.0107447505},"labels":[],"label_agreement":null},{"id":"W2140080956","doi":"10.1109/ccece.2004.1349655","title":"A temperature dependent large-signal drain current neural model for the dual-gate MESFET","year":2004,"lang":"en","type":"article","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Ottawa","funders":"","keywords":"MESFET; Wafer; Artificial neural network; Materials science; SIGNAL (programming language); Atmospheric temperature range; Optoelectronics; Current (fluid); Electronic engineering; Layer (electronics); Perceptron; Electrical engineering; Computer science; Engineering; Transistor; Physics; Field-effect transistor; Voltage; Nanotechnology; Artificial intelligence","score_opus":0.02444568463057788,"score_gpt":0.26286139960354427,"score_spread":0.23841571497296637,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2140080956","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.2799596,0.00055378646,0.7114142,0.0004359018,0.00006841197,0.000035546676,0.00020513369,0.0004984842,0.006828901],"genre_scores_gemma":[0.97115076,0.00014588752,0.022738405,0.000045241668,0.000012988448,0.0000510494,0.00007143811,0.000016726286,0.005767576],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9999031,0.000022070739,0.000004071975,0.000029074063,0.00002698712,0.000014775485],"domain_scores_gemma":[0.999884,0.00004403907,0.000016267099,0.000009361876,0.000040636052,0.000005751997],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00021035771,0.0003065007,0.0002904437,0.00013129156,0.00014259806,0.00031224883,0.0007605296,0.00066806696,0.0009592331],"category_scores_gemma":[0.00043931184,0.00018325822,0.00036074631,0.00016040535,0.00032581706,0.0005944496,0.00018294412,0.000503793,0.00018212193],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00004223225,0.000015327587,0.0003391798,0.000014614935,0.000013065559,0.000044779146,0.0000162617,0.9877751,0.0058915527,0.0017232555,0.00012445617,0.0040001753],"study_design_scores_gemma":[0.000001280797,0.000005241811,0.00007564606,4.7298514e-7,0.0000016770475,0.0000038255594,0.0000010135417,0.9992331,0.00043020045,0.00019891364,0.00004740224,0.0000011807653],"about_ca_topic_score_codex":0.004249998,"about_ca_topic_score_gemma":0.0052312505,"teacher_disagreement_score":0.004249998,"about_ca_system_score_codex":0.00058716175,"about_ca_system_score_gemma":0.00034731568,"threshold_uncertainty_score":0.008450508},"labels":[],"label_agreement":null},{"id":"W2143211096","doi":"10.1109/iwjt.2008.4540037","title":"Extendibility of NiPt silicide to the 22-nm node CMOS technology","year":2008,"lang":"en","type":"article","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":6,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Advanced Micro Devices (Canada)","funders":"","keywords":"Silicide; CMOS; Node (physics); Lithography; Materials science; Physics; Optoelectronics; Silicon","score_opus":0.01937703853800953,"score_gpt":0.23539928717270014,"score_spread":0.2160222486346906,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2143211096","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.93235433,0.002856159,0.018518154,0.00034950496,0.00014997312,0.0000598937,0.0003040777,0.00053544214,0.04487262],"genre_scores_gemma":[0.9786244,0.0018579413,0.012976199,0.00007698896,0.0000430746,0.00003928665,0.00025679314,0.000042799264,0.0060824575],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99988854,0.00000540651,0.000005151696,0.00002610308,0.000059082373,0.00001565445],"domain_scores_gemma":[0.99988306,0.000030759853,0.000019718023,0.00002998619,0.000024901803,0.000011646033],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00009167294,0.00019519485,0.00015351818,0.00010209617,0.00014348915,0.000258685,0.00024451918,0.00022130136,0.0014895543],"category_scores_gemma":[0.0003220875,0.000120846766,0.00015190855,0.00008934355,0.00017861398,0.00043657882,0.00032983214,0.0003092755,0.00050713576],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000048765,0.000015974314,0.0006455007,0.00008999158,0.000009124721,0.0006522124,0.00007726674,0.00069931656,0.9870014,0.0011696793,0.00028458278,0.009306116],"study_design_scores_gemma":[0.000011475728,0.00032582975,0.0044573164,0.000019778061,0.000027838681,0.0018757236,0.00005006601,0.005641445,0.9628563,0.00063023844,0.024090718,0.000013259849],"about_ca_topic_score_codex":0.00033629558,"about_ca_topic_score_gemma":0.0008660639,"teacher_disagreement_score":0.0014895543,"about_ca_system_score_codex":0.00016576212,"about_ca_system_score_gemma":0.00017712034,"threshold_uncertainty_score":0.0049830675},"labels":[],"label_agreement":null},{"id":"W2143274460","doi":"10.1109/ted.2007.908883","title":"Atomistic Modeling of Gate-All-Around Si-Nanowire Field-Effect Transistors","year":2007,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":17,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"National Research Council Canada","funders":"","keywords":"Nanowire; Transistor; Materials science; Field-effect transistor; Quantum capacitance; Doping; Capacitance; Non-equilibrium thermodynamics; Logic gate; Optoelectronics; Condensed matter physics; Nanotechnology; Physics; Electronic engineering; Voltage; Electrode; Quantum mechanics; Engineering","score_opus":0.014657841866756447,"score_gpt":0.2565513253145231,"score_spread":0.24189348344776668,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2143274460","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.93989396,0.00023593123,0.043162897,0.00042022567,0.000048757047,0.000078712364,0.0008951141,0.00023227946,0.0150321275],"genre_scores_gemma":[0.9865767,0.00016232609,0.010320875,0.000065097876,0.000013647403,0.00011933718,0.00032535096,0.00004617196,0.002370523],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99991417,0.000025200687,0.0000027253127,0.000010449982,0.000026145604,0.000021353224],"domain_scores_gemma":[0.9997633,0.00010836658,0.000027790551,0.00002465939,0.000041583662,0.000034306835],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00020840524,0.00028784527,0.00064511073,0.00024033929,0.0005215831,0.00046980515,0.0012261379,0.0011042604,0.0020397971],"category_scores_gemma":[0.00079445326,0.0002979846,0.00040253357,0.00038056943,0.0006794216,0.00048789012,0.000357345,0.00036638186,0.00021299558],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000032564596,0.000028525448,0.0006205228,0.000020512101,0.000018422841,0.0000878097,0.000026617894,0.99240077,0.0022983993,0.0035076865,0.00018899601,0.00076913787],"study_design_scores_gemma":[0.00000765162,0.000008543613,0.0001813802,0.0000013453127,0.0000028561053,0.0000060428297,0.0000073115525,0.9989274,0.0002274796,0.00048102762,0.00014608902,0.0000027878903],"about_ca_topic_score_codex":0.013737262,"about_ca_topic_score_gemma":0.010952762,"teacher_disagreement_score":0.013737262,"about_ca_system_score_codex":0.0010977173,"about_ca_system_score_gemma":0.0010194028,"threshold_uncertainty_score":0.027314603},"labels":[],"label_agreement":null},{"id":"W2145936381","doi":"10.1109/16.936506","title":"Profile design considerations for minimizing base transit time in SiGe HBTs for all levels of injection before onset of Kirk effect","year":2001,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":17,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Common emitter; Doping; Bipolar junction transistor; Materials science; Optoelectronics; Diffusion; Electric field; Base (topology); Transit time; Silicon-germanium; Current density; Transistor; Electrical engineering; Chemistry; Physics; Engineering; Voltage; Mathematics; Silicon","score_opus":0.033108851102220255,"score_gpt":0.27365090042286,"score_spread":0.24054204932063974,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2145936381","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.2017892,0.00038291974,0.7915626,0.00019314792,0.000015137778,0.0001160205,0.000071904105,0.0004312502,0.0054377434],"genre_scores_gemma":[0.8134694,0.00018649234,0.1853701,0.000029035278,0.000004763093,0.000060282986,0.000038935654,0.000082054634,0.0007589866],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99991095,0.000023716917,0.000004187626,0.000009648708,0.00004025137,0.000011256422],"domain_scores_gemma":[0.999793,0.0000786318,0.00004089406,0.000018630579,0.000057466405,0.000011402969],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00039312616,0.00031311632,0.00025638065,0.0002376432,0.0003231249,0.0004919063,0.00036488162,0.00031204143,0.00047467346],"category_scores_gemma":[0.0013009543,0.0002426031,0.00023094537,0.00019676,0.00021461029,0.0004600473,0.0002549454,0.000288368,0.00016564282],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00022928405,0.0000442303,0.0032894507,0.00013663094,0.00003071012,0.00013478052,0.00021720873,0.7992661,0.13091935,0.014694454,0.00040880387,0.050628915],"study_design_scores_gemma":[0.000022048975,0.000083323604,0.00065517565,0.000011552257,0.00001515891,0.00007991197,0.00004174308,0.96954185,0.02657649,0.0021168813,0.00084339216,0.000012545729],"about_ca_topic_score_codex":0.0018884903,"about_ca_topic_score_gemma":0.0032291093,"teacher_disagreement_score":0.0018884903,"about_ca_system_score_codex":0.0006922886,"about_ca_system_score_gemma":0.0008248098,"threshold_uncertainty_score":0.005022943},"labels":[],"label_agreement":null},{"id":"W2146467210","doi":"10.1109/nanoarch.2007.4400866","title":"Crossbar latch-based combinational and sequential logic for nano FPGA","year":2007,"lang":"en","type":"article","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Calgary","funders":"","keywords":"Crossbar switch; Combinational logic; Computer science; Field-programmable gate array; Sequential logic; Logic gate; CMOS; Programmable logic array; Programmable logic device; Digital electronics; Electronic circuit; Electronic engineering; Computer hardware; Engineering; Electrical engineering; Algorithm; Telecommunications","score_opus":0.030077460107289473,"score_gpt":0.27992562442649777,"score_spread":0.24984816431920828,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2146467210","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.44079915,0.004568853,0.48600468,0.0009564578,0.00046648766,0.00020282198,0.00029839153,0.004159276,0.06254394],"genre_scores_gemma":[0.8538882,0.00091384083,0.12840019,0.00031292005,0.000061647705,0.00009422717,0.00022194561,0.000066846515,0.016040158],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999461,0.000009586347,0.0000037357179,0.000011099347,0.000022331818,0.0000071823356],"domain_scores_gemma":[0.9999323,0.000014712053,0.0000090015865,0.000017631059,0.000020375504,0.0000059150157],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00007706472,0.0001927469,0.00012063445,0.00028437664,0.00024169279,0.00041605678,0.00029921727,0.00019562656,0.005180086],"category_scores_gemma":[0.00014806447,0.000119989476,0.0001067807,0.00026039913,0.00016655937,0.00040419222,0.00017793031,0.00026710334,0.0007692358],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00037838318,0.0001190388,0.0009480265,0.00027116496,0.000040322702,0.00056132034,0.000085936976,0.018173905,0.65981233,0.06591682,0.005567652,0.24812505],"study_design_scores_gemma":[0.00010789685,0.0011107917,0.0021927413,0.000083340215,0.000076657496,0.0012160029,0.000076678254,0.19668846,0.6891058,0.019110233,0.09017944,0.00005203051],"about_ca_topic_score_codex":0.00036452437,"about_ca_topic_score_gemma":0.0016996816,"teacher_disagreement_score":0.005180086,"about_ca_system_score_codex":0.000288122,"about_ca_system_score_gemma":0.0003544774,"threshold_uncertainty_score":0.017329156},"labels":[],"label_agreement":null},{"id":"W2147133116","doi":"10.1109/ted.2015.2406074","title":"An Ultra-Low Specific ON-Resistance LDMOST With Self-Driven Split Gate","year":2015,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":9,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Toronto","funders":"China Scholarship Council; National Natural Science Foundation of China","keywords":"Oxide; Field-effect transistor; Transistor; Physics; Doping; Electrical engineering; Analytical Chemistry (journal); Voltage; Topology (electrical circuits); Materials science; Optoelectronics; Chemistry; Quantum mechanics; Engineering","score_opus":0.01585764491244317,"score_gpt":0.23351346497168698,"score_spread":0.2176558200592438,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2147133116","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99051625,0.00043068585,0.005908302,0.00015923362,0.000060572598,0.00001951679,0.0002062905,0.00030234875,0.0023967817],"genre_scores_gemma":[0.9946148,0.00012826933,0.0041638436,0.000044223052,0.0000127899775,0.000015099898,0.000083431834,0.000015025372,0.00092239503],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999378,0.0000052709665,0.000002673459,0.0000170307,0.000019500618,0.000017691098],"domain_scores_gemma":[0.99986506,0.00003271333,0.000026942223,0.000018768225,0.000027451924,0.000029090625],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000087294226,0.00025053672,0.00042336644,0.00012783607,0.00024589643,0.00039689857,0.0007754494,0.0005068069,0.00086314714],"category_scores_gemma":[0.0001713894,0.00014076076,0.00024506275,0.00019361963,0.00019763508,0.0004385108,0.00027732516,0.00018034292,0.00021570454],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0003411412,0.00008447502,0.000946936,0.0001726241,0.00004447205,0.00061411277,0.00006446273,0.0057662176,0.9853892,0.0013021415,0.000789884,0.0044843345],"study_design_scores_gemma":[0.00021666074,0.0021937792,0.004983264,0.00003564609,0.00014321398,0.001265693,0.00008527583,0.21972921,0.7624747,0.0013731567,0.0074306945,0.0000686285],"about_ca_topic_score_codex":0.0010608389,"about_ca_topic_score_gemma":0.002053471,"teacher_disagreement_score":0.0010608389,"about_ca_system_score_codex":0.0003673874,"about_ca_system_score_gemma":0.00024419275,"threshold_uncertainty_score":0.0028874874},"labels":[],"label_agreement":null},{"id":"W2149930993","doi":"10.1109/dftvs.1996.571980","title":"Making defect avoidance nearly invisible to the user in wafer scale field programmable gate arrays","year":2002,"lang":"en","type":"article","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":7,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Simon Fraser University","funders":"","keywords":"Field-programmable gate array; Routing (electronic design automation); Wafer; Flexibility (engineering); Gate array; Computer science; Embedded system; Programmable logic device; Scale (ratio); Programmable logic array; Materials science; Optoelectronics; Physics","score_opus":0.03599002358322215,"score_gpt":0.2517123232755302,"score_spread":0.21572229969230808,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2149930993","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.509775,0.0040868428,0.4444633,0.0014772526,0.0005134522,0.000087119304,0.00018630463,0.0061653834,0.033245366],"genre_scores_gemma":[0.870161,0.0016528735,0.11865357,0.00043954016,0.000109066874,0.000041514417,0.00009186795,0.0004219945,0.00842857],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99978894,0.000027062744,0.000010249773,0.000031980686,0.000108647924,0.000033047443],"domain_scores_gemma":[0.9993855,0.00026880408,0.0000856945,0.00016869493,0.00006592198,0.000025416084],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00021039744,0.00026846773,0.00018874652,0.00021977605,0.00032024333,0.0006918118,0.00050097005,0.0004959478,0.0012149938],"category_scores_gemma":[0.0009335851,0.00021995674,0.00018439876,0.0002189557,0.0006901418,0.000961501,0.00042164078,0.00053686096,0.0004179729],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00037707848,0.000088540044,0.0009327088,0.00024708526,0.000023453596,0.0006842817,0.00049202965,0.009583067,0.7751814,0.033674583,0.004376647,0.17433901],"study_design_scores_gemma":[0.0001667238,0.001113187,0.0020551477,0.00004754774,0.0000614066,0.0021094421,0.00021107361,0.03753328,0.8271504,0.0436686,0.085785836,0.00009723837],"about_ca_topic_score_codex":0.00034431118,"about_ca_topic_score_gemma":0.0005310772,"teacher_disagreement_score":0.0012149938,"about_ca_system_score_codex":0.00020365442,"about_ca_system_score_gemma":0.0001876179,"threshold_uncertainty_score":0.0040645003},"labels":[],"label_agreement":null},{"id":"W2153583091","doi":"10.1109/newcas.2008.4606350","title":"Thermal stress monitoring using gradient direction sensors","year":2008,"lang":"en","type":"article","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":9,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Université du Québec à Trois-Rivières; Université du Québec en Outaouais","funders":"","keywords":"Very-large-scale integration; Finite element method; Computer science; Electronic engineering; Modular design; Detector; Electronic circuit; Integrated circuit; Chip; Engineering; Electrical engineering","score_opus":0.0430707544034515,"score_gpt":0.24785918326543588,"score_spread":0.2047884288619844,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2153583091","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.5434578,0.00091239595,0.44795254,0.00014088492,0.000073798816,0.00006473186,0.00017402491,0.0017811034,0.0054426426],"genre_scores_gemma":[0.91842705,0.00019617,0.08022292,0.000031605327,0.000013924877,0.000020883233,0.00005673923,0.000025010051,0.0010056201],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998653,0.00002355995,0.000004226359,0.000029851182,0.000066710774,0.000010358566],"domain_scores_gemma":[0.99983466,0.000039055813,0.00002767291,0.000015430625,0.000072686315,0.00001046925],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00011359018,0.00026735,0.00020270092,0.0003731802,0.00009134144,0.00037890457,0.0002945665,0.00024497372,0.0004813062],"category_scores_gemma":[0.0003377786,0.00014584992,0.000109945526,0.00031671973,0.00017693467,0.00039376903,0.00019794078,0.00016665563,0.0001687171],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0002705484,0.00004607262,0.0069812625,0.0001439523,0.000023336403,0.00006785101,0.00012808475,0.012253228,0.7870639,0.0017971974,0.0009617627,0.19026272],"study_design_scores_gemma":[0.00003167493,0.00043725217,0.010953883,0.00001890417,0.000035575704,0.00036106302,0.00010364782,0.335518,0.6468647,0.0011186437,0.0044925157,0.00006411638],"about_ca_topic_score_codex":0.00043535864,"about_ca_topic_score_gemma":0.00085032627,"teacher_disagreement_score":0.0004813062,"about_ca_system_score_codex":0.00020183035,"about_ca_system_score_gemma":0.00017434258,"threshold_uncertainty_score":0.0016101599},"labels":[],"label_agreement":null},{"id":"W2154674836","doi":"","title":"RF Noise Models of MOSFETs- A Review","year":2004,"lang":"en","type":"review","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":5,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McMaster University","funders":"","keywords":"Noise (video); Emphasis (telecommunications); MOSFET; Electronic engineering; Computer science; Flicker noise; Engineering; Electrical engineering; Noise figure; Telecommunications; CMOS; Transistor; Artificial intelligence","score_opus":0.07064815713429169,"score_gpt":0.3138056862515328,"score_spread":0.24315752911724114,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2154674836","genre_codex":"review","genre_gemma":"review","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"review","genre_consensus":"review","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.0015077499,0.95708686,0.030942043,0.00032018256,0.00055282767,0.00002171203,0.00014256414,0.00013547223,0.009290559],"genre_scores_gemma":[0.014589695,0.96469915,0.010994815,0.00025683705,0.00045129427,0.000041428397,0.00031703347,0.000038846956,0.008610991],"study_design_codex":"design_other","study_design_gemma":"not_applicable","domain_scores_codex":[0.9997924,0.000026467738,0.000020468624,0.00004889514,0.00009912599,0.00001253991],"domain_scores_gemma":[0.99976224,0.00010375556,0.000023111066,0.000018604725,0.00008574176,0.0000065771374],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00037784423,0.0014150976,0.0016830083,0.0013858231,0.00026342334,0.0008561899,0.0019380391,0.0012647405,0.0029276505],"category_scores_gemma":[0.00067950477,0.0004510655,0.0007613871,0.0019983135,0.00032250475,0.0017976151,0.00042502477,0.0005820179,0.003871161],"study_design_candidate":"not_applicable","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000079951045,0.00010088232,0.00041282183,0.014554559,0.0001198638,0.00047744255,0.00014912568,0.028958727,0.014236338,0.05089465,0.024677433,0.86533827],"study_design_scores_gemma":[0.000012557196,0.00018805524,0.0006270227,0.0031167248,0.00018187524,0.0029351804,0.00008323584,0.022370312,0.007969476,0.03677291,0.92565954,0.000083201],"about_ca_topic_score_codex":0.00106664,"about_ca_topic_score_gemma":0.0009627288,"teacher_disagreement_score":0.0029276505,"about_ca_system_score_codex":0.0005615285,"about_ca_system_score_gemma":0.0007392731,"threshold_uncertainty_score":0.009793997},"labels":[],"label_agreement":null},{"id":"W2155848129","doi":"10.1109/mwsym.1992.188089","title":"Temperature dependence of DC currents in HBT","year":2003,"lang":"en","type":"article","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":21,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Memorial University of Newfoundland","funders":"","keywords":"Heterojunction bipolar transistor; Bipolar junction transistor; Spice; Transistor; Heterojunction; Transistor model; Heterostructure-emitter bipolar transistor; Junction temperature; Thermal; Electrical engineering; Materials science; Optoelectronics; Computer science; Electronic engineering; Physics; Engineering; Voltage","score_opus":0.014582558873198637,"score_gpt":0.2389557844152213,"score_spread":0.22437322554202266,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2155848129","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9452156,0.0048880856,0.02482734,0.00059402053,0.00018668614,0.00008484047,0.001982833,0.0022867671,0.019933838],"genre_scores_gemma":[0.99510926,0.00052716123,0.0012467754,0.000043932552,0.000020741463,0.000013421794,0.00035649532,0.00012593497,0.0025563082],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99965215,0.000022647564,0.000015482772,0.00010182752,0.00012982186,0.00007813167],"domain_scores_gemma":[0.9990602,0.00042734647,0.00008054467,0.00009966124,0.00029206544,0.000040250772],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00023471359,0.00027504904,0.0003190691,0.000454752,0.00024989902,0.0005849038,0.00046183408,0.0004528167,0.003012548],"category_scores_gemma":[0.0015639919,0.00022664755,0.0002947432,0.00057141396,0.00032108862,0.0008062342,0.00017305784,0.00056600187,0.0011770643],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0010179338,0.00024420265,0.007972363,0.0006548397,0.00012457435,0.00078528404,0.0010564289,0.082051024,0.84715056,0.0067415205,0.004593152,0.047608085],"study_design_scores_gemma":[0.000032547603,0.0006256922,0.011269529,0.00008573695,0.00009906301,0.00070133805,0.00018272748,0.26494285,0.71033996,0.0018606264,0.009793981,0.00006596527],"about_ca_topic_score_codex":0.0018356154,"about_ca_topic_score_gemma":0.0012645008,"teacher_disagreement_score":0.003012548,"about_ca_system_score_codex":0.00090539944,"about_ca_system_score_gemma":0.00018800364,"threshold_uncertainty_score":0.010077953},"labels":[],"label_agreement":null},{"id":"W2156280681","doi":"10.1109/ccece.1997.608284","title":"An improved gating technique for the synchronous rectifier MOSFETs in the forward converter topology","year":2002,"lang":"en","type":"article","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":11,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Concordia University","funders":"","keywords":"Gating; Topology (electrical circuits); Electronic engineering; Rectifier (neural networks); MOSFET; Computer science; Voltage; Electrical engineering; Engineering; Transistor","score_opus":0.021501451038502054,"score_gpt":0.2561786528453173,"score_spread":0.23467720180681528,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2156280681","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.05307427,0.0006894127,0.9371558,0.00014732142,0.00019980643,0.00009569927,0.000055172874,0.00051319454,0.008069266],"genre_scores_gemma":[0.6069962,0.0012665316,0.38143873,0.00023197735,0.000192095,0.000097004355,0.000096242846,0.00011135719,0.009569879],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998965,0.000020117344,0.000008059851,0.000019644636,0.000043424217,0.000012175737],"domain_scores_gemma":[0.9998807,0.000034425742,0.000017751434,0.00002959206,0.000031396692,0.000006217817],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00022484022,0.00023690547,0.0002191021,0.00017664288,0.00015516512,0.00030525608,0.00047490696,0.00026350372,0.0015188769],"category_scores_gemma":[0.00025915922,0.00012446594,0.0002121253,0.00023003908,0.00019246648,0.0007094128,0.00015270861,0.000442953,0.00044082283],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00016589063,0.00008152611,0.0002871915,0.00026231655,0.000020435069,0.0002624756,0.00016020509,0.0047130785,0.6342241,0.06557277,0.0018098446,0.29244015],"study_design_scores_gemma":[0.00014645541,0.0017412625,0.001649028,0.00008697585,0.00013668224,0.0033140604,0.00007053051,0.1420498,0.72350407,0.02749467,0.09973484,0.000071562536],"about_ca_topic_score_codex":0.00010025168,"about_ca_topic_score_gemma":0.0002320784,"teacher_disagreement_score":0.0015188769,"about_ca_system_score_codex":0.000116799885,"about_ca_system_score_gemma":0.00024918263,"threshold_uncertainty_score":0.005081117},"labels":[],"label_agreement":null},{"id":"W2157031691","doi":"10.1109/iscas.1990.111927","title":"Comparison of mixed analog-digital simulators","year":2002,"lang":"en","type":"article","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":15,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Memorial University of Newfoundland","funders":"Semiconductor Research Corporation","keywords":"Transient (computer programming); Computer science; Flash (photography); Flash ADC; Transient analysis; Mixed-signal integrated circuit; Electronic engineering; Transient response; Electrical engineering; Engineering; Integrated circuit; Programming language; Comparator; Physics; Operating system","score_opus":0.048097674045801536,"score_gpt":0.27553060478721847,"score_spread":0.22743293074141693,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2157031691","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.5017923,0.0015985393,0.44268152,0.0005721765,0.00027224532,0.0005062966,0.0010496026,0.0070228023,0.044504497],"genre_scores_gemma":[0.9404303,0.00029174244,0.054534137,0.000106653344,0.00001244678,0.00017486802,0.00032438803,0.00015255343,0.003972996],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99877733,0.00044153046,0.00010080017,0.0000869542,0.0005132571,0.0000801081],"domain_scores_gemma":[0.995135,0.0031894068,0.00009710336,0.00058795855,0.00088313885,0.00010725335],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0015951783,0.00055897067,0.0005049495,0.0010239254,0.0003106893,0.0014878481,0.0011227749,0.00082577084,0.0054563833],"category_scores_gemma":[0.00816915,0.00030052036,0.00037478152,0.00060953584,0.0002748755,0.0014434211,0.00064569013,0.0004672082,0.0007212744],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0027030585,0.0003979439,0.0058400542,0.00055484404,0.00021152839,0.00028884376,0.0003943612,0.7672524,0.024631789,0.03502722,0.0028474152,0.15985057],"study_design_scores_gemma":[0.00008479078,0.000567074,0.0006785077,0.000043654964,0.000055378056,0.000101451384,0.00007616691,0.9735954,0.015375094,0.004705979,0.004684142,0.00003236084],"about_ca_topic_score_codex":0.0014964916,"about_ca_topic_score_gemma":0.0015719179,"teacher_disagreement_score":0.0054563833,"about_ca_system_score_codex":0.00088890875,"about_ca_system_score_gemma":0.0007466866,"threshold_uncertainty_score":0.018253446},"labels":[],"label_agreement":null},{"id":"W2157522018","doi":"10.1109/icnf.2011.5994323","title":"Flicker noise due to variable range hopping in organic thin-film transistors","year":2011,"lang":"en","type":"article","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":2,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McMaster University","funders":"","keywords":"Variable-range hopping; Flicker noise; Thin-film transistor; Noise (video); Transistor; Materials science; Variable (mathematics); Range (aeronautics); Optoelectronics; Shot noise; Organic semiconductor; Electronic engineering; Computer science; Electrical engineering; Voltage; Telecommunications; Nanotechnology; Engineering; CMOS; Artificial intelligence; Mathematics; Noise figure","score_opus":0.024326860730896346,"score_gpt":0.2057046515765492,"score_spread":0.18137779084565286,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2157522018","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.8301708,0.0011402927,0.16568327,0.00007432828,0.000057441757,0.000030552274,0.00002963341,0.00031275323,0.0025010277],"genre_scores_gemma":[0.99259186,0.00025460654,0.0068392456,0.000021463251,0.000008082063,0.0000052887426,0.000013618849,0.000016293054,0.00024954608],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9997702,0.00003255813,0.0000076474125,0.000027604678,0.00014180869,0.000020189409],"domain_scores_gemma":[0.99921227,0.00061272585,0.00006046107,0.00003237106,0.000064467604,0.000017611223],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0002914409,0.00022344428,0.00022217707,0.00042480358,0.00021326849,0.0003044812,0.00035375697,0.00036598337,0.00038481614],"category_scores_gemma":[0.0017153452,0.000103760074,0.00018748306,0.0003073877,0.0005042838,0.00051323586,0.00023246907,0.00028536472,0.000049349645],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00031131812,0.00010196603,0.007914468,0.0004041474,0.000080055506,0.001615112,0.00057576783,0.27341792,0.6568084,0.015188219,0.00017842546,0.043404326],"study_design_scores_gemma":[0.000024916895,0.00028123593,0.0048768586,0.00003899571,0.000048907517,0.0006952974,0.00010020979,0.7872973,0.20031792,0.005420417,0.00082954793,0.000068388385],"about_ca_topic_score_codex":0.00079858414,"about_ca_topic_score_gemma":0.0007992187,"teacher_disagreement_score":0.00079858414,"about_ca_system_score_codex":0.0003580917,"about_ca_system_score_gemma":0.00015786498,"threshold_uncertainty_score":0.0025981069},"labels":[],"label_agreement":null},{"id":"W2158316047","doi":"10.1002/pssc.200776574","title":"Impact of strain on scaling of Double Gate nanoMOSFETs using NEGF approach","year":2007,"lang":"en","type":"article","venue":"Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Engineering and Physical Sciences Research Council","keywords":"MOSFET; Double gate; Scaling; Nanometre; Transistor; Strain (injury); Materials science; Optoelectronics; Length scale; Range (aeronautics); Condensed matter physics; Physics; Nanotechnology; Geometry; Quantum mechanics; Mathematics; Composite material; Voltage","score_opus":0.0968886904862518,"score_gpt":0.39415529571388763,"score_spread":0.2972666052276358,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2158316047","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9871509,0.00026466645,0.007685145,0.00020618123,0.000037689562,0.000018377696,0.0001394435,0.00014904323,0.0043485635],"genre_scores_gemma":[0.99797136,0.00005871936,0.0016445472,0.000026261147,0.000004923658,0.000011138499,0.000043963086,0.000022979508,0.00021618474],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9998678,0.000032367283,0.000005841536,0.00001848391,0.000043857715,0.00003162579],"domain_scores_gemma":[0.9994293,0.0003545711,0.00006446181,0.000048565234,0.000064312226,0.000038701197],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00031084957,0.00053813995,0.0005369513,0.00026766522,0.0002924103,0.00063485955,0.00057028123,0.00062835205,0.001210717],"category_scores_gemma":[0.0015520236,0.00019553983,0.00037077325,0.00017937158,0.00035442738,0.00058331573,0.0002697272,0.0002682326,0.00011664317],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0001717824,0.00008046788,0.0026882964,0.000083432955,0.000049845374,0.00027016582,0.00006260411,0.9622255,0.027453408,0.0022515333,0.0002608127,0.0044021234],"study_design_scores_gemma":[0.000013259066,0.000070919756,0.00052972074,0.0000060260923,0.000010864079,0.000019297146,0.000014036749,0.9929055,0.0057057193,0.000520428,0.0001951351,0.000009182833],"about_ca_topic_score_codex":0.0031251248,"about_ca_topic_score_gemma":0.0024950313,"teacher_disagreement_score":0.0031251248,"about_ca_system_score_codex":0.0005786402,"about_ca_system_score_gemma":0.00029093842,"threshold_uncertainty_score":0.0062139034},"labels":[],"label_agreement":null},{"id":"W2158805999","doi":"10.1109/icnf.2011.5994288","title":"Frozen noise origin of temporal low-frequency noise in electronic devices","year":2011,"lang":"en","type":"article","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McMaster University","funders":"","keywords":"Noise (video); Computer science; Flicker noise; Noise measurement; Variance (accounting); Infrasound; Acoustics; Noise floor; Electronic engineering; Noise figure; Physics; Telecommunications; Engineering; Noise reduction; Artificial intelligence; Bandwidth (computing)","score_opus":0.023841244514874915,"score_gpt":0.23772127962668874,"score_spread":0.21388003511181383,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2158805999","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.34999996,0.0014863128,0.61719704,0.0006007619,0.000327358,0.00008628061,0.0001245693,0.0008664215,0.029311297],"genre_scores_gemma":[0.9880063,0.0003763686,0.009461266,0.00009865148,0.000048029848,0.000030338304,0.000045033892,0.00009687873,0.0018371058],"study_design_codex":"theoretical_or_conceptual","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998258,0.000022753102,0.0000057744046,0.000027679658,0.000082777544,0.000035222987],"domain_scores_gemma":[0.99959284,0.00020957206,0.000048878108,0.00007539796,0.000054591157,0.000018782936],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00037887637,0.00041294907,0.00030797848,0.00049634906,0.00041195942,0.0006403872,0.0009383386,0.0005470854,0.0023680676],"category_scores_gemma":[0.0018694743,0.00014942506,0.000419282,0.00024936206,0.0011006749,0.0014044798,0.0004578714,0.00059629296,0.00022453709],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0002496181,0.00011326962,0.004029502,0.00036622508,0.000055254608,0.00189604,0.00047553747,0.2448217,0.12126365,0.59973747,0.0013132128,0.02567856],"study_design_scores_gemma":[0.000011018699,0.000039971743,0.0018215672,0.000025664092,0.000015030128,0.00026873036,0.000030062853,0.9302232,0.011131359,0.055683065,0.00072656525,0.000023653967],"about_ca_topic_score_codex":0.0008052192,"about_ca_topic_score_gemma":0.0006824395,"teacher_disagreement_score":0.0023680676,"about_ca_system_score_codex":0.00046558125,"about_ca_system_score_gemma":0.0003465072,"threshold_uncertainty_score":0.007921934},"labels":[],"label_agreement":null},{"id":"W2159981061","doi":"10.1109/bipol.1992.274049","title":"An accurate quasi-static method for determining the excess phase shift in the base region of bipolar transistors","year":2003,"lang":"en","type":"article","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":11,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Bipolar junction transistor; Transistor; Common emitter; Computer science; Electronic circuit; Base (topology); Electronic engineering; Computational physics; Phase (matter); Physics; Electrical engineering; Voltage; Optoelectronics; Engineering; Mathematics; Quantum mechanics","score_opus":0.06152906489305147,"score_gpt":0.34383954388754273,"score_spread":0.28231047899449124,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2159981061","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.0032273645,0.00034454008,0.9933322,0.000032926775,0.00007026884,0.000027519354,0.00007598156,0.0005185236,0.002370623],"genre_scores_gemma":[0.19523898,0.0011615704,0.7924654,0.00017477109,0.00008940705,0.00024303867,0.00028720833,0.00027193403,0.010067722],"study_design_codex":"design_other","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9997129,0.00004654384,0.000009940744,0.00003459187,0.00018381182,0.000012322931],"domain_scores_gemma":[0.99960166,0.00014823973,0.000034488257,0.00009932916,0.00010304975,0.000013288535],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00037970894,0.0005142969,0.00031127367,0.0011526649,0.00041735853,0.0006041028,0.0008762234,0.00050909026,0.0027162356],"category_scores_gemma":[0.0010716185,0.00031949102,0.00030004428,0.0007030164,0.00040406352,0.0009701502,0.00046969476,0.00058826356,0.0014172689],"study_design_candidate":"simulation_or_modeling","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00012495871,0.000079311634,0.0011339408,0.00044993818,0.00006604105,0.0002477275,0.00022218777,0.11647886,0.31099242,0.18942931,0.0054459637,0.3753294],"study_design_scores_gemma":[0.000021199849,0.00009529098,0.0008518461,0.000030632713,0.000027196882,0.00045728986,0.000025314117,0.8759752,0.066503644,0.034262106,0.021700973,0.00004937713],"about_ca_topic_score_codex":0.0010033882,"about_ca_topic_score_gemma":0.0018312277,"teacher_disagreement_score":0.0027162356,"about_ca_system_score_codex":0.00047566497,"about_ca_system_score_gemma":0.0005326076,"threshold_uncertainty_score":0.009086728},"labels":[],"label_agreement":null},{"id":"W2162827367","doi":"10.5555/832284.835426","title":"T3: Trends and Challenges in VLSI Technology Scaling towards 100nm","year":2002,"lang":"en","type":"article","venue":"Asia and South Pacific Design Automation Conference","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":11,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Transistor; Very-large-scale integration; Computer science; Skew; Electronic engineering; Node (physics); Transistor count; Silicon on insulator; Jitter; Electrical engineering; Engineering; Materials science; Telecommunications; Silicon; Voltage; Optoelectronics","score_opus":0.09227699011412348,"score_gpt":0.2404851329203492,"score_spread":0.14820814280622574,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2162827367","genre_codex":"other","genre_gemma":"review","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"review","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.051481083,0.35023865,0.08799545,0.09641224,0.009585483,0.00025391905,0.0017656044,0.0032732382,0.3989943],"genre_scores_gemma":[0.20677437,0.40332434,0.08377322,0.022465821,0.00731106,0.0003379093,0.0029012344,0.00086428004,0.27224776],"study_design_codex":"design_other","study_design_gemma":"not_applicable","domain_scores_codex":[0.9997484,0.000036015826,0.00001725514,0.000027519334,0.00013555985,0.000035270747],"domain_scores_gemma":[0.9994954,0.00014933138,0.00003995642,0.000015896203,0.0002443814,0.000055126875],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00073625974,0.00036528398,0.00022306346,0.00054023735,0.000395803,0.0021990603,0.0005610374,0.001650183,0.02099663],"category_scores_gemma":[0.001222585,0.00020068971,0.00023137603,0.0018714623,0.00032926758,0.0028032842,0.0003900234,0.0010197189,0.00828476],"study_design_candidate":"not_applicable","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00008773927,0.00005146855,0.0015313,0.0017334453,0.000013860514,0.00030180675,0.0002803793,0.0027267765,0.013610381,0.043000642,0.26033422,0.67632794],"study_design_scores_gemma":[0.000013837653,0.00018623182,0.002389168,0.00041887438,0.000015831603,0.00090628595,0.00050481054,0.0047632987,0.0034965554,0.022888089,0.96438974,0.000027369877],"about_ca_topic_score_codex":0.0013153583,"about_ca_topic_score_gemma":0.0020830075,"teacher_disagreement_score":0.02099663,"about_ca_system_score_codex":0.00081237016,"about_ca_system_score_gemma":0.0011869944,"threshold_uncertainty_score":0.070240736},"labels":[],"label_agreement":null},{"id":"W2163494897","doi":"10.1088/1367-2630/15/5/053042","title":"Stress redistribution in individual ultrathin strained silicon nanowires: a high-resolution polarized Raman study","year":2013,"lang":"en","type":"article","venue":"New Journal of Physics","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":8,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Polytechnique Montréal","funders":"","keywords":"Nanowire; Raman spectroscopy; Materials science; Optoelectronics; Nanotechnology; Silicon; Raman scattering; Optics; Physics","score_opus":0.02179835982298646,"score_gpt":0.24989494803086928,"score_spread":0.2280965882078828,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2163494897","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9976482,0.00012435578,0.0016741776,0.000011770843,0.0000039747683,0.0000041711705,0.000047657682,0.000014352374,0.0004714293],"genre_scores_gemma":[0.99784863,0.00014216139,0.0015544853,0.000007771914,0.000004624546,0.000006944954,0.000056525467,0.0000072543558,0.00037161523],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99993944,0.000004353536,0.0000023186817,0.00001701417,0.000023770739,0.000013236706],"domain_scores_gemma":[0.9998498,0.0000313402,0.000045119174,0.000014936744,0.00004231684,0.00001640277],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00009729077,0.00020593299,0.00013334726,0.00018086229,0.000170021,0.00030432997,0.00020137824,0.00023171757,0.00043841134],"category_scores_gemma":[0.00010200577,0.00022076671,0.00015887071,0.00016275395,0.00024213447,0.0002539619,0.000174545,0.00027805482,0.00015227211],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000028364178,0.000024899613,0.0017044106,0.000022216851,0.000011124428,0.00011036537,0.000078004065,0.0005495751,0.9959506,0.00016892253,0.000029851226,0.0013216628],"study_design_scores_gemma":[0.000012212573,0.00021128952,0.029242737,0.00001162058,0.000028607828,0.00030658237,0.00023291042,0.026390092,0.94242907,0.00015471736,0.0009600086,0.000020084308],"about_ca_topic_score_codex":0.00053889194,"about_ca_topic_score_gemma":0.00068924855,"teacher_disagreement_score":0.00053889194,"about_ca_system_score_codex":0.00016567315,"about_ca_system_score_gemma":0.00009267344,"threshold_uncertainty_score":0.0014666915},"labels":[],"label_agreement":null},{"id":"W2163724016","doi":"10.1109/16.936699","title":"Interpretation of the common-emitter offset voltage in heterojunction bipolar transistors","year":2001,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":4,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Institute for Microstructural Sciences","funders":"","keywords":"Bipolar junction transistor; Heterojunction bipolar transistor; Common emitter; Input offset voltage; Heterojunction; Offset (computer science); Heterostructure-emitter bipolar transistor; Optoelectronics; Materials science; Transistor; Voltage; Electrical engineering; Electronic engineering; Computer science; Engineering; Operational amplifier","score_opus":0.009915100817555183,"score_gpt":0.2289038331874954,"score_spread":0.21898873236994024,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2163724016","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.14467373,0.0023829176,0.7855834,0.0009027296,0.00042855937,0.000032789074,0.0004502051,0.0029133132,0.06263235],"genre_scores_gemma":[0.9389367,0.0011710087,0.047986105,0.00015851695,0.00012578013,0.000022645941,0.00020638459,0.0003383474,0.0110545065],"study_design_codex":"theoretical_or_conceptual","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99987304,0.000032172156,0.0000056336926,0.000022419039,0.000052924475,0.000013835606],"domain_scores_gemma":[0.9997749,0.00010214905,0.00003110181,0.00003451812,0.00004245255,0.0000148926],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00018867705,0.00076337997,0.00022657194,0.0009089148,0.00031609347,0.0013506017,0.0006331064,0.00078426494,0.0048145046],"category_scores_gemma":[0.001089333,0.00022569958,0.00026359066,0.0005378469,0.00075805973,0.0011461169,0.00035440407,0.00064447103,0.0007823533],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00032798585,0.00007564397,0.00161057,0.00036060472,0.000029692264,0.0018863243,0.00078504294,0.07620308,0.20648813,0.59244627,0.0055308756,0.11425571],"study_design_scores_gemma":[0.00004766799,0.00017823653,0.0034825425,0.0001228159,0.00004245618,0.0014915643,0.00040500172,0.32188618,0.088210955,0.55379015,0.030273383,0.000069005844],"about_ca_topic_score_codex":0.00043065398,"about_ca_topic_score_gemma":0.0003242321,"teacher_disagreement_score":0.0048145046,"about_ca_system_score_codex":0.00036224976,"about_ca_system_score_gemma":0.00013898317,"threshold_uncertainty_score":0.016106129},"labels":[],"label_agreement":null},{"id":"W2164995505","doi":"10.1109/sispad.2000.871252","title":"Simulation of self-heating and contact resistance influences on nMOSFETs","year":2002,"lang":"en","type":"article","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"","funders":"Canada's Oil Sands Innovation Alliance","keywords":"Contact resistance; Materials science; MOSFET; Silicide; Phonon scattering; Condensed matter physics; Schottky barrier; Scattering; Phonon; Optoelectronics; Silicon; Electrical engineering; Composite material; Layer (electronics); Physics; Transistor; Optics","score_opus":0.02239161824866335,"score_gpt":0.24392279455678223,"score_spread":0.2215311763081189,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2164995505","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.97887385,0.00012807675,0.015004437,0.00013160809,0.000030724113,0.000052717613,0.0004416114,0.00030296907,0.0050340067],"genre_scores_gemma":[0.9955155,0.000060866067,0.0029581557,0.000018257224,0.0000047922094,0.00005077399,0.00012531318,0.000028654958,0.0012376558],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9998758,0.000028477543,0.0000052533273,0.000018810159,0.000038042566,0.000033598615],"domain_scores_gemma":[0.9994721,0.00032602903,0.000052192954,0.00003483491,0.00008044012,0.00003441102],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00019829233,0.0004271853,0.0005862005,0.0002593006,0.0003176841,0.00031988142,0.00078578456,0.00090900407,0.0020481222],"category_scores_gemma":[0.0009995946,0.00026675698,0.0004541819,0.00040816958,0.00036448787,0.00043379897,0.00026707558,0.00035049205,0.0001402491],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000047727135,0.000031043815,0.0010161247,0.000030547286,0.0000147883065,0.00010173043,0.000043119395,0.99161434,0.004944088,0.0008421075,0.00014015136,0.0011742745],"study_design_scores_gemma":[0.000007838066,0.000023779887,0.00025745717,0.0000012556474,0.000003756422,0.0000074851714,0.000007520633,0.9980021,0.0014525392,0.000117881704,0.000115680516,0.0000026867963],"about_ca_topic_score_codex":0.009348416,"about_ca_topic_score_gemma":0.007346115,"teacher_disagreement_score":0.009348416,"about_ca_system_score_codex":0.0007766315,"about_ca_system_score_gemma":0.0006663285,"threshold_uncertainty_score":0.018588006},"labels":[],"label_agreement":null},{"id":"W2166089731","doi":"10.1109/tnano.2007.913430","title":"A Nanodamascene Process for Advanced Single-Electron Transistor Fabrication","year":2008,"lang":"en","type":"article","venue":"IEEE Transactions on Nanotechnology","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":54,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Université de Sherbrooke","funders":"","keywords":"Coulomb blockade; Transistor; Fabrication; Materials science; Field-effect transistor; Nanowire; Silicon; Optoelectronics; Process (computing); Nanoelectronics; MOSFET; Nanotechnology; Electrical engineering; Computer science; Engineering; Voltage","score_opus":0.026406026401804547,"score_gpt":0.2488146417923115,"score_spread":0.22240861539050694,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2166089731","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.5573012,0.005189236,0.39849055,0.0009427468,0.00084872294,0.0007031438,0.0012881827,0.0024199665,0.03281629],"genre_scores_gemma":[0.703666,0.002569874,0.28005403,0.00015505952,0.00007627316,0.0005633266,0.0005530378,0.000118497395,0.012243995],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998568,0.00000533572,0.0000066511598,0.000033740158,0.00008719732,0.000010182025],"domain_scores_gemma":[0.9999176,0.000019257956,0.000021514372,0.000017842693,0.000013358156,0.00001042392],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000084784115,0.00032086583,0.00024836123,0.00021498017,0.00037345974,0.00024063874,0.00041303114,0.0002609536,0.0017756155],"category_scores_gemma":[0.00015670345,0.00021971633,0.00012928827,0.00016412989,0.0001972074,0.00036395437,0.00035774687,0.0005213654,0.0007971525],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000007975831,0.000008353896,0.000043661224,0.000047248588,0.0000017971746,0.00007164208,0.000020734999,0.00017672023,0.9941398,0.0014942808,0.00017994951,0.0038079475],"study_design_scores_gemma":[0.0000142074605,0.000112269474,0.00049268396,0.0000097659295,0.0000050377867,0.0005351066,0.000011281497,0.0036049704,0.96932554,0.0007556136,0.025119208,0.000014233526],"about_ca_topic_score_codex":0.00025880366,"about_ca_topic_score_gemma":0.001294545,"teacher_disagreement_score":0.0017756155,"about_ca_system_score_codex":0.00037870955,"about_ca_system_score_gemma":0.00030089048,"threshold_uncertainty_score":0.00594002},"labels":[],"label_agreement":null},{"id":"W2166240511","doi":"10.1109/ccece.2009.5090297","title":"MOSFET model assessment for submicron and nanometer bulk-driven applications","year":2009,"lang":"en","type":"article","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Memorial University of Newfoundland","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"MOSFET; Electronic engineering; Power MOSFET; Computer science; Logic gate; Electrical engineering; Voltage; Transistor; Engineering","score_opus":0.01796557116822099,"score_gpt":0.2724393331521942,"score_spread":0.2544737619839732,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2166240511","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.4576489,0.0027094479,0.51420414,0.0003287156,0.00015397718,0.0002519309,0.0018514463,0.0018055744,0.02104583],"genre_scores_gemma":[0.9756974,0.00073096,0.02034165,0.00003225625,0.000015887132,0.00010771152,0.0005956669,0.00009615777,0.0023821862],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99984956,0.000027539183,0.000008360123,0.000017458457,0.000081355975,0.000015640066],"domain_scores_gemma":[0.99973303,0.00009797289,0.00002215479,0.00004074143,0.000096822136,0.000009360678],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00031125286,0.00054630823,0.00042448015,0.00044537376,0.00022545976,0.00041033287,0.0008334678,0.00061182556,0.0014350462],"category_scores_gemma":[0.00097409583,0.0001562749,0.00066104066,0.00040022703,0.00011112519,0.00076463405,0.00029679603,0.00028670125,0.00038127156],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0002002839,0.00006923765,0.0037751733,0.00037549617,0.000076750715,0.00027406128,0.00013734942,0.85449916,0.068592,0.008439858,0.0030517248,0.060509007],"study_design_scores_gemma":[0.0000067881947,0.0001122508,0.00071630586,0.000016776525,0.000024469206,0.000082195584,0.000025255284,0.98567295,0.009320764,0.0017285811,0.0022828383,0.000010860526],"about_ca_topic_score_codex":0.002258566,"about_ca_topic_score_gemma":0.0028685045,"teacher_disagreement_score":0.002258566,"about_ca_system_score_codex":0.000690201,"about_ca_system_score_gemma":0.00057985674,"threshold_uncertainty_score":0.0050078034},"labels":[],"label_agreement":null},{"id":"W2167582967","doi":"10.1021/nl801256p","title":"Field Dependent Transport Properties in InAs Nanowire Field Effect Transistors","year":2008,"lang":"en","type":"article","venue":"Nano Letters","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":32,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Simon Fraser University","funders":"Office of Naval Research","keywords":"Nanowire; Transconductance; Materials science; Field-effect transistor; Condensed matter physics; Field dependence; Scattering; Electron mobility; Conductance; Transistor; Optoelectronics; Transmission electron microscopy; Indium arsenide; Phonon scattering; Phonon; Gallium arsenide; Nanotechnology; Optics; Magnetic field; Physics","score_opus":0.012459123326577008,"score_gpt":0.19169198887687997,"score_spread":0.17923286555030296,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2167582967","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99822193,0.00044352593,0.0005698025,0.000022471997,0.0000035103408,0.000004596762,0.00009340991,0.000018201694,0.0006226083],"genre_scores_gemma":[0.99869746,0.00032061062,0.0003204789,0.000005543201,0.000005735722,0.0000050967005,0.00012884033,0.0000065956838,0.00050969905],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999366,0.000008131794,0.0000035660203,0.000012267395,0.000026142376,0.000013285979],"domain_scores_gemma":[0.9998272,0.00007121508,0.0000420667,0.000014028271,0.00003480869,0.000010648742],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00017569648,0.00022752403,0.00016132921,0.00028287937,0.00018233655,0.0002763702,0.00015764822,0.00016309961,0.00055283343],"category_scores_gemma":[0.00046605794,0.00010625324,0.00012521828,0.000210794,0.00020453734,0.00043483463,0.00008872885,0.0001311014,0.000103774124],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00013885314,0.000048045018,0.0031533479,0.0000826363,0.000018387553,0.0002584909,0.000105714214,0.0052485275,0.9871634,0.0010188825,0.00009330492,0.002670446],"study_design_scores_gemma":[0.000029670688,0.00091900444,0.03204743,0.00003645303,0.000057753332,0.0006470062,0.00013291017,0.09723885,0.8648515,0.0016314742,0.0023570338,0.000050917388],"about_ca_topic_score_codex":0.0008439469,"about_ca_topic_score_gemma":0.0006941563,"teacher_disagreement_score":0.0008439469,"about_ca_system_score_codex":0.0003056868,"about_ca_system_score_gemma":0.000112334,"threshold_uncertainty_score":0.0022178888},"labels":[],"label_agreement":null},{"id":"W2167666123","doi":"10.1109/tns.2004.829372","title":"A sensitive, temperature-compensated, zero-bias floating gate MOSFET dosimeter","year":2004,"lang":"en","type":"article","venue":"IEEE Transactions on Nuclear Science","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":77,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"National Research Council Canada; Carleton University","funders":"","keywords":"Transistor; Dosimeter; Optoelectronics; MOSFET; Materials science; Sensitivity (control systems); Compensation (psychology); Threshold voltage; Electrical engineering; Silicon; Radiation; Voltage; Optics; Electronic engineering; Physics; Engineering","score_opus":0.019463571436621075,"score_gpt":0.22768185205351843,"score_spread":0.20821828061689734,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2167666123","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.52775574,0.004733014,0.45504358,0.0004040535,0.00044565773,0.00025347035,0.0020041435,0.0031145187,0.006245759],"genre_scores_gemma":[0.80605996,0.0011139628,0.18597206,0.00022674238,0.00007754619,0.000104120256,0.0008395227,0.0001280491,0.005477961],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99956506,0.000031087868,0.000010804013,0.000094211144,0.00027443073,0.00002441926],"domain_scores_gemma":[0.9995449,0.00013462189,0.00009751238,0.00007013954,0.00011844625,0.000034333672],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00042208057,0.0004141272,0.0005012142,0.0003848653,0.00019520489,0.00033744032,0.00080661225,0.00054129085,0.0009329],"category_scores_gemma":[0.0006422296,0.00023119962,0.00022620759,0.0002714381,0.0003692892,0.00042754403,0.0003332235,0.000591679,0.00034073342],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00014370435,0.000027579288,0.0011795589,0.00008240851,0.0000145483655,0.00007728801,0.000030677737,0.0010121688,0.984429,0.0008708773,0.00045715555,0.0116749955],"study_design_scores_gemma":[0.000037719838,0.00044226844,0.0037039549,0.000014574781,0.00005879039,0.0010695786,0.000017873033,0.013219005,0.9731003,0.000548897,0.007744588,0.000042466454],"about_ca_topic_score_codex":0.00047270706,"about_ca_topic_score_gemma":0.00116867,"teacher_disagreement_score":0.0009329,"about_ca_system_score_codex":0.0006823335,"about_ca_system_score_gemma":0.00043311264,"threshold_uncertainty_score":0.004950762},"labels":[],"label_agreement":null},{"id":"W2168920379","doi":"10.1109/eamta.2014.6906083","title":"A novel design methodology for low-noise and high-gain transimpedance amplifiers","year":2014,"lang":"en","type":"article","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":12,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Ontario Tech University","funders":"","keywords":"Transimpedance amplifier; Electronic engineering; CMOS; Bandwidth (computing); Capacitive sensing; Noise figure; Effective input noise temperature; Noise (video); Electrical engineering; Electronic circuit; Amplifier; Computer science; Low-noise amplifier; Current mirror; Noise power; Operational amplifier; Engineering; Power (physics); Physics; Telecommunications; Transistor; Voltage","score_opus":0.06945806368942722,"score_gpt":0.27797586866419,"score_spread":0.20851780497476277,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2168920379","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.005155827,0.00014751455,0.9921423,0.000051595256,0.000033443066,0.000086244516,0.000024111538,0.00034534116,0.0020135709],"genre_scores_gemma":[0.19578932,0.00035139354,0.79835606,0.00011554457,0.000062754094,0.00026954766,0.00009074424,0.00010808287,0.004856629],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9994942,0.000054127213,0.00003157905,0.00010450809,0.00028230913,0.000033334916],"domain_scores_gemma":[0.9996642,0.000063110696,0.00006986198,0.000044707183,0.00014585878,0.000012303272],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00037459453,0.0005730527,0.00020526,0.00043786335,0.00038254328,0.0006591854,0.0011640176,0.00044190855,0.001800932],"category_scores_gemma":[0.0007476389,0.00027237684,0.00036186972,0.00025965486,0.0003495522,0.00077179685,0.0003457926,0.000614909,0.0006912832],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000041980646,0.00006247217,0.0004549017,0.0004555162,0.000063216954,0.00020854763,0.00027247754,0.024124451,0.79705185,0.04654189,0.0012930698,0.12942968],"study_design_scores_gemma":[0.000046578774,0.0007889699,0.0009841534,0.00007684964,0.00013385073,0.0017052838,0.00010012631,0.21920365,0.6815453,0.014094661,0.081261456,0.000059230613],"about_ca_topic_score_codex":0.00046843008,"about_ca_topic_score_gemma":0.0010621839,"teacher_disagreement_score":0.001800932,"about_ca_system_score_codex":0.0005952031,"about_ca_system_score_gemma":0.00062770053,"threshold_uncertainty_score":0.0060247183},"labels":[],"label_agreement":null},{"id":"W2168989275","doi":"10.1109/icmel.1997.632868","title":"Artificial neural networks for reverse engineering bipolar transistors","year":2002,"lang":"en","type":"article","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":2,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Artificial neural network; Bipolar junction transistor; Spice; Transistor; Computer science; Reverse engineering; Set (abstract data type); Electrical engineering; Artificial intelligence; Electronic engineering; Engineering; Voltage","score_opus":0.02869667302797244,"score_gpt":0.20702085310442644,"score_spread":0.178324180076454,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2168989275","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.015107915,0.005074782,0.96982723,0.0006429485,0.00026449512,0.00005990313,0.00011673294,0.0008122803,0.008093666],"genre_scores_gemma":[0.41003078,0.006380506,0.5622632,0.00037504872,0.00022562232,0.00035762545,0.0004657108,0.00014102682,0.019760566],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99986637,0.000034217537,0.0000092300115,0.000021074038,0.00005982066,0.000009358801],"domain_scores_gemma":[0.99974495,0.00013691462,0.000024942186,0.0000186326,0.000069042704,0.000005581986],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00041587141,0.00043666892,0.00032110544,0.00030755534,0.00019024091,0.00045217274,0.00054536917,0.0006698683,0.0024936502],"category_scores_gemma":[0.001332965,0.00019529632,0.00029115845,0.00040953682,0.00029492172,0.0005536241,0.0003037152,0.0008852236,0.0005568757],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00008355172,0.00004009608,0.00038550264,0.00028216702,0.000059185255,0.0001277424,0.000038722796,0.6773211,0.012264985,0.03783425,0.0040309406,0.26753175],"study_design_scores_gemma":[0.0000067715973,0.000017003576,0.00008384825,0.00001719284,0.00000955432,0.000026720676,0.0000044810918,0.98377323,0.002648383,0.009491353,0.003914198,0.0000072647254],"about_ca_topic_score_codex":0.0016417291,"about_ca_topic_score_gemma":0.001956176,"teacher_disagreement_score":0.0024936502,"about_ca_system_score_codex":0.0003796742,"about_ca_system_score_gemma":0.00029664976,"threshold_uncertainty_score":0.008342087},"labels":[],"label_agreement":null},{"id":"W2169151976","doi":"10.1109/mwscas.2000.951390","title":"Interaction of threshold voltage and mobility temperature dependencies applied to stabilization of current and voltage","year":2002,"lang":"en","type":"article","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":20,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Alberta","funders":"","keywords":"Compensation (psychology); Biasing; Transistor; Threshold voltage; Voltage; Temperature coefficient; CMOS; Current (fluid); Overdrive voltage; Materials science; Diode; Electrical engineering; Optoelectronics; Engineering","score_opus":0.02875967242843701,"score_gpt":0.252002409717435,"score_spread":0.22324273728899796,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2169151976","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9048171,0.0010465335,0.08569107,0.00038740708,0.00007123098,0.00003425015,0.0000787681,0.0007572912,0.0071163704],"genre_scores_gemma":[0.9974419,0.00013895916,0.0018013885,0.000020473934,0.000009819248,0.000009044673,0.000013099069,0.00003740321,0.00052798516],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998673,0.000026351368,0.0000056335743,0.000028048104,0.000040572104,0.00003207553],"domain_scores_gemma":[0.99947447,0.0002849364,0.00007886303,0.000059336056,0.00007637473,0.000025991416],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00016517975,0.00020920699,0.00018905885,0.00015317924,0.0001449638,0.00028303234,0.00029941474,0.0002999805,0.0011216609],"category_scores_gemma":[0.0019066427,0.00018904982,0.00020500142,0.00015707998,0.00034467917,0.00037980234,0.0002737282,0.00032886944,0.0002425691],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00025713234,0.00002042165,0.002473151,0.00007152765,0.000020362644,0.00025065467,0.00024073153,0.029745413,0.93550885,0.0101930015,0.00034734936,0.020871233],"study_design_scores_gemma":[0.000029193672,0.00035794958,0.007794477,0.00003384346,0.000053019932,0.00058932864,0.00008105449,0.3139335,0.66639036,0.006588078,0.0041103414,0.00003889905],"about_ca_topic_score_codex":0.00034388123,"about_ca_topic_score_gemma":0.00042549075,"teacher_disagreement_score":0.0011216609,"about_ca_system_score_codex":0.00042879788,"about_ca_system_score_gemma":0.00014133574,"threshold_uncertainty_score":0.0037523508},"labels":[],"label_agreement":null},{"id":"W2170749103","doi":"10.1109/redw.2001.960442","title":"Simultaneous cryogenic temperature (77 K) and total dose ionizing radiation effects on COTS amplifiers","year":2002,"lang":"en","type":"article","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":8,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"","funders":"McMaster University","keywords":"Ionizing radiation; Amplifier; Absorbed dose; Radiation; Materials science; Optoelectronics; Non-ionizing radiation; Voltage; CMOS; Total harmonic distortion; Electrical engineering; Irradiation; Electronic engineering; Physics; Optics; Engineering; Nuclear physics","score_opus":0.008876893342765316,"score_gpt":0.20244116213739632,"score_spread":0.193564268794631,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2170749103","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9985567,0.00028471494,0.0005791094,0.000013829388,0.0000084816365,0.000006738781,0.000085600164,0.000014622411,0.0004502695],"genre_scores_gemma":[0.9980573,0.00028105287,0.00040833637,0.000017212815,0.0000073083124,0.0000072923344,0.00012448936,0.0000172715,0.0010797891],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998248,0.000023430026,0.000010659588,0.000036486555,0.00005732679,0.00004730893],"domain_scores_gemma":[0.99940133,0.00021162005,0.000114187336,0.00007937166,0.00015729204,0.000036314123],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00019779777,0.0003166714,0.00032850972,0.00024728358,0.00029818696,0.00023218906,0.00024902515,0.00025764972,0.0022484409],"category_scores_gemma":[0.00055965595,0.00019507318,0.00025127566,0.00036734188,0.0004564882,0.00020488809,0.00017981134,0.00028013779,0.00027078157],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0006005946,0.000013690683,0.0017110191,0.00005709829,0.000022283803,0.000121969744,0.00017166029,0.0009822013,0.99436295,0.00010991194,0.00004736622,0.0017992469],"study_design_scores_gemma":[0.00001013334,0.00095872994,0.010204508,0.000011803972,0.000044578956,0.00016232033,0.000121272635,0.0010540625,0.9867844,0.000038057125,0.0006014774,0.000008618469],"about_ca_topic_score_codex":0.0015074413,"about_ca_topic_score_gemma":0.0019518139,"teacher_disagreement_score":0.0022484409,"about_ca_system_score_codex":0.0003050888,"about_ca_system_score_gemma":0.00016926076,"threshold_uncertainty_score":0.0075217485},"labels":[],"label_agreement":null},{"id":"W2176549292","doi":"10.1155/2001/17268","title":"Strain‐Dependence of Electron Transport in BulkSi and Deep‐Submicron MOSFETs","year":2001,"lang":"en","type":"article","venue":"VLSI design","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":2,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Bell (Canada)","funders":"","keywords":"MOSFET; Velocity saturation; Materials science; Saturation (graph theory); Condensed matter physics; Electron mobility; Electron; Monte Carlo method; Drift velocity; Saturation velocity; Electron transport chain; Saturation current; Substrate (aquarium); Strain (injury); Nanotechnology; Optoelectronics; Electrical engineering; Transistor; Physics; Chemistry; Engineering; Voltage","score_opus":0.017706339634550403,"score_gpt":0.2279449512627259,"score_spread":0.2102386116281755,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2176549292","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9965192,0.00033391546,0.002062038,0.000027788377,0.000007670667,0.000003905114,0.00008121298,0.000034361743,0.0009297552],"genre_scores_gemma":[0.9984522,0.00017814343,0.00077488617,0.0000071277755,0.0000029603077,0.0000062936783,0.00009752968,0.000009633695,0.0004712123],"study_design_codex":"simulation_or_modeling","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99992454,0.0000096922595,0.0000037084612,0.000012176264,0.00003075931,0.000019185147],"domain_scores_gemma":[0.99978155,0.000112843656,0.000035119097,0.000015687325,0.000038887087,0.00001586537],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00020109043,0.00020956715,0.00027843946,0.00021532663,0.00016315778,0.0002588528,0.00024382424,0.00021638906,0.00047915085],"category_scores_gemma":[0.0004862102,0.00015896648,0.00023639735,0.00021839213,0.00020858913,0.0003277786,0.00011212178,0.00015736137,0.00010273145],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0010324911,0.00018506557,0.013883325,0.00026677872,0.00010842167,0.00058582413,0.0001918962,0.5696213,0.3930907,0.0069925697,0.0004969526,0.01354475],"study_design_scores_gemma":[0.00003126303,0.0003512415,0.005820976,0.000012379273,0.000026242258,0.00010516985,0.000031109408,0.9338003,0.058319684,0.0009928469,0.00048710575,0.000021633943],"about_ca_topic_score_codex":0.0024661722,"about_ca_topic_score_gemma":0.0026417773,"teacher_disagreement_score":0.0024661722,"about_ca_system_score_codex":0.0004386985,"about_ca_system_score_gemma":0.0002578859,"threshold_uncertainty_score":0.004903674},"labels":[],"label_agreement":null},{"id":"W2177833829","doi":"10.1063/1.4935752","title":"Device performance simulations of multilayer black phosphorus tunneling transistors","year":2015,"lang":"en","type":"article","venue":"Applied Physics Letters","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":36,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McGill University","funders":"Natural Sciences and Engineering Research Council of Canada; National Natural Science Foundation of China","keywords":"Monolayer; Materials science; Transistor; Quantum tunnelling; Optoelectronics; Zigzag; Black phosphorus; Doping; Leakage (economics); Subthreshold swing; Ion; Threshold voltage; Nanotechnology; Voltage; Electrical engineering; Physics","score_opus":0.034198665698527815,"score_gpt":0.23205821147850178,"score_spread":0.19785954577997397,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2177833829","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.94625026,0.00043944473,0.016852645,0.0005642631,0.00004404632,0.000053978776,0.001370165,0.00021293815,0.0342124],"genre_scores_gemma":[0.99389327,0.00013901958,0.0031679345,0.000050358107,0.000010097867,0.00006711844,0.00036686563,0.000040071867,0.002265387],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9998485,0.000030875646,0.000004994719,0.000017282246,0.000041717016,0.00005660646],"domain_scores_gemma":[0.99967456,0.00017322841,0.000031798096,0.000021662774,0.0000719171,0.000026879838],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00026039613,0.00049799326,0.00076763425,0.0004852673,0.00058867916,0.0005551621,0.0009640092,0.0012700006,0.004068348],"category_scores_gemma":[0.0009595522,0.0002836688,0.00081121986,0.0006225316,0.00048299244,0.0006534923,0.0003705321,0.00037895568,0.0002761021],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00005779092,0.000025687817,0.00069567666,0.000053810476,0.000020092899,0.0001258433,0.00004099268,0.9922497,0.0023047698,0.0032259019,0.0003280273,0.00087176554],"study_design_scores_gemma":[0.000013516604,0.000027656672,0.0002549883,0.0000037221848,0.000006040124,0.00001072725,0.000015770143,0.9984182,0.0004138509,0.0006284827,0.00020315193,0.0000038833896],"about_ca_topic_score_codex":0.013423872,"about_ca_topic_score_gemma":0.0060677915,"teacher_disagreement_score":0.013423872,"about_ca_system_score_codex":0.001019788,"about_ca_system_score_gemma":0.00076284877,"threshold_uncertainty_score":0.026691437},"labels":[],"label_agreement":null},{"id":"W2187623041","doi":"","title":"An A Priori Hysteresis Modeling Methodology for Improved Efficiency and Model Accuracy in Advanced PD SOI Technologies","year":2005,"lang":"en","type":"article","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Advanced Micro Devices (Canada)","funders":"","keywords":"Silicon on insulator; A priori and a posteriori; Hysteresis; MOSFET; Parasitic capacitance; Electronic engineering; Capacitance; Computer science; Diode; Materials science; Voltage; Silicon; Optoelectronics; Engineering; Electrical engineering; Physics; Transistor","score_opus":0.06069295686887365,"score_gpt":0.32562250999575987,"score_spread":0.2649295531268862,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2187623041","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.008455421,0.000064655644,0.9899361,0.00003421672,0.000006979494,0.000015772905,0.000044905155,0.00041244988,0.0010293995],"genre_scores_gemma":[0.56658596,0.00033109498,0.42887455,0.00006241092,0.000026317022,0.0002032724,0.0003154217,0.00027708153,0.0033237392],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99976367,0.000048227652,0.000015044361,0.000033269953,0.00012270603,0.000017009235],"domain_scores_gemma":[0.99960166,0.0001413231,0.000048901897,0.00011142472,0.00008579596,0.000010929224],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0004095015,0.00055185286,0.000513729,0.00038813287,0.00029857754,0.0006888916,0.0012659729,0.00048820232,0.0013595608],"category_scores_gemma":[0.0012404551,0.00045177725,0.0006448403,0.00028119207,0.00029698227,0.0015566945,0.0005723472,0.00080063613,0.00032161802],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000069616275,0.000046394518,0.0005289583,0.00010796054,0.00004663722,0.00008220783,0.00012187952,0.8527736,0.042606898,0.035870906,0.00066451344,0.06708043],"study_design_scores_gemma":[0.0000037897687,0.000030446436,0.00009220897,0.0000046383648,0.0000070284586,0.000029706447,0.0000057088946,0.98656917,0.00840144,0.00364331,0.0012055795,0.000006966524],"about_ca_topic_score_codex":0.0015516424,"about_ca_topic_score_gemma":0.0018810969,"teacher_disagreement_score":0.0015516424,"about_ca_system_score_codex":0.00037854566,"about_ca_system_score_gemma":0.00068782526,"threshold_uncertainty_score":0.0045481324},"labels":[],"label_agreement":null},{"id":"W2265526841","doi":"10.1021/acs.jpcc.5b07361","title":"Metal Seed Loss Throughout the Nanowire Growth: Bulk Trapping and Surface Mass Transport","year":2016,"lang":"en","type":"article","venue":"The Journal of Physical Chemistry C","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":5,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Polytechnique Montréal","funders":"Natural Sciences and Engineering Research Council of Canada; Canada Research Chairs","keywords":"Trapping; Nanowire; Mass transport; Materials science; Metal; Nanotechnology; Surface (topology); Chemical physics; Engineering physics; Metallurgy; Chemistry; Physics; Geometry; Geography","score_opus":0.010913600529110602,"score_gpt":0.2308167637302059,"score_spread":0.2199031632010953,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2265526841","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.97229916,0.0005103999,0.022792019,0.000112679205,0.000017093884,0.000021881973,0.00010204756,0.00016611857,0.00397863],"genre_scores_gemma":[0.9962674,0.0001503045,0.0021901007,0.00001097973,0.0000029587018,0.000012327666,0.000050577324,0.000028783921,0.0012865332],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999368,0.0000031012103,0.0000027364279,0.000021018299,0.00002357557,0.000012658883],"domain_scores_gemma":[0.9999074,0.000032178046,0.000024908513,0.000009593805,0.000019783976,0.0000061122487],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0000920943,0.00027091455,0.00023570101,0.00014859627,0.00023209213,0.0004521628,0.0003384476,0.00029909975,0.00060514844],"category_scores_gemma":[0.0002885693,0.00019696273,0.00020534848,0.00010695211,0.0002827203,0.00047379764,0.00024231554,0.00025443692,0.00019385756],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000062883795,0.000026922227,0.0013670684,0.000045017587,0.0000070103147,0.00021956429,0.000091994705,0.0057084463,0.98459965,0.0028325517,0.00009721777,0.0049415985],"study_design_scores_gemma":[0.000011695148,0.0000742556,0.002697681,0.0000080224345,0.000012847818,0.000116876836,0.00005666739,0.1491028,0.84613377,0.000944617,0.0008307881,0.000010075389],"about_ca_topic_score_codex":0.0019107797,"about_ca_topic_score_gemma":0.0016772544,"teacher_disagreement_score":0.0019107797,"about_ca_system_score_codex":0.0008606726,"about_ca_system_score_gemma":0.00032145187,"threshold_uncertainty_score":0.0062446594},"labels":[],"label_agreement":null},{"id":"W2269348935","doi":"","title":"Processor efficiency: A comparative analysis of amd and intel","year":2013,"lang":"en","type":"article","venue":"EXCEL International Journal of Multidisciplinary Management Studies","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":true,"ca_institutions":"","funders":"","keywords":"Graphics; Operating system; Quarter (Canadian coin); Computer science; Parallel computing; Geography","score_opus":0.04199107698169419,"score_gpt":0.3381304843155889,"score_spread":0.2961394073338947,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2269348935","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9702392,0.0011426973,0.00092978444,0.00016992664,0.00001694899,0.000013309164,0.00024911182,0.000051684725,0.027187217],"genre_scores_gemma":[0.99176687,0.0003756133,0.00060619094,0.000043428925,0.00001622607,0.000008156086,0.00039094532,0.0000378436,0.006754843],"study_design_codex":"observational","study_design_gemma":"observational","domain_scores_codex":[0.99908483,0.00006887799,0.000055541503,0.000104252606,0.00048877805,0.00019771654],"domain_scores_gemma":[0.9971831,0.00092421524,0.00048145137,0.000111715184,0.0010407604,0.00025887313],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00056835596,0.00015008663,0.00016662022,0.0028835314,0.00029266856,0.0010977167,0.0002943512,0.00021876289,0.0052837115],"category_scores_gemma":[0.004071373,0.00009822858,0.00021398565,0.0028213474,0.0002242555,0.0011088084,0.0004895866,0.00019786661,0.0011302459],"study_design_candidate":"observational","study_design_consensus":"observational","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0027614248,0.0003869476,0.5963166,0.00031578762,0.00014633802,0.0012750792,0.0021775947,0.0063888878,0.019146672,0.010707182,0.014000197,0.3463773],"study_design_scores_gemma":[0.000055957204,0.0017153117,0.9437582,0.000065189546,0.000120984034,0.00179001,0.0029909178,0.0062174588,0.0071164714,0.0015926997,0.034539673,0.00003713531],"about_ca_topic_score_codex":0.0022504881,"about_ca_topic_score_gemma":0.0026802272,"teacher_disagreement_score":0.0052837115,"about_ca_system_score_codex":0.00075964734,"about_ca_system_score_gemma":0.0003954157,"threshold_uncertainty_score":0.017675757},"labels":[],"label_agreement":null},{"id":"W2297904851","doi":"10.1049/el.2015.1929","title":"Digitally assisted CMOS mixer with tight conversion‐gain flatness","year":2015,"lang":"en","type":"article","venue":"Electronics Letters","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Queen's University","funders":"Natural Sciences and Engineering Research Council of Canada; China Scholarship Council","keywords":"Flatness (cosmology); CMOS; Electronic engineering; Materials science; Electrical engineering; Optoelectronics; Engineering; Physics","score_opus":0.01433379007303741,"score_gpt":0.1993103800083869,"score_spread":0.1849765899353495,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2297904851","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.6990375,0.0009039372,0.2781098,0.0009551355,0.00025817944,0.00017534087,0.00018371746,0.0017577995,0.01861869],"genre_scores_gemma":[0.94770896,0.0001554449,0.048441973,0.00024656003,0.000075320655,0.000030492813,0.000058095266,0.00003429746,0.0032488806],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9997123,0.000019955798,0.000011808837,0.00006928226,0.00013918066,0.000047472982],"domain_scores_gemma":[0.9997193,0.0000790591,0.00007237602,0.00004536087,0.00005749945,0.000026466234],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00027872447,0.0003688438,0.00025343653,0.00036361642,0.00024258622,0.00045425032,0.00055572327,0.00048609992,0.0015920898],"category_scores_gemma":[0.00053629966,0.00023509884,0.00018279384,0.00032416813,0.0003425538,0.0004670613,0.00059929787,0.00064814556,0.00051382155],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000073292584,0.00002463644,0.00021853992,0.000016917253,0.00000539971,0.000054271783,0.000027750895,0.00029647374,0.9880108,0.0009991047,0.00012589527,0.010146937],"study_design_scores_gemma":[0.00007438698,0.00037879864,0.0017181229,0.000008914559,0.000023749835,0.0005408294,0.0000147933015,0.013262832,0.97838825,0.00042744464,0.0051365886,0.000025301611],"about_ca_topic_score_codex":0.0002524227,"about_ca_topic_score_gemma":0.00070203625,"teacher_disagreement_score":0.0015920898,"about_ca_system_score_codex":0.00034009523,"about_ca_system_score_gemma":0.00026519818,"threshold_uncertainty_score":0.0053260922},"labels":[],"label_agreement":null},{"id":"W2306648779","doi":"10.1063/1.4944649","title":"Quantum transport modelling of silicon nanobeams using heterogeneous computing scheme","year":2016,"lang":"en","type":"article","venue":"Journal of Applied Physics","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":9,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Nanoacademic Technologies; McGill University","funders":"Natural Sciences and Engineering Research Council of Canada; National Research Council Canada; Compute Canada","keywords":"Maxima and minima; Quantum; Scattering; Materials science; Quantum simulator; Position (finance); Computational physics; Physics; Quantum computer; Computational science; Molecular physics; Computer science; Quantum mechanics","score_opus":0.0397533673192048,"score_gpt":0.23868490172102705,"score_spread":0.19893153440182226,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2306648779","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.40615144,0.00051485153,0.5614429,0.0005619643,0.000069503956,0.00012824508,0.0004945795,0.00041514987,0.030221302],"genre_scores_gemma":[0.92913365,0.00023097597,0.065236315,0.00006274205,0.000014006321,0.00014731291,0.00017593977,0.000096732045,0.0049023964],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9998808,0.000034228247,0.0000053915874,0.000018220366,0.000037984497,0.000023332712],"domain_scores_gemma":[0.9997286,0.00014476862,0.000031013944,0.000026964944,0.000045747332,0.000022914572],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0003324749,0.00034449354,0.00046176603,0.00034552338,0.0005277757,0.000742895,0.0008067026,0.00076508115,0.0016729396],"category_scores_gemma":[0.0006713296,0.00026245145,0.0004675323,0.00042330872,0.00063506234,0.0006835861,0.00047602804,0.00035302626,0.00016937523],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000008792009,0.00001008505,0.00021441882,0.000009799368,0.000006075139,0.000032102347,0.000013630792,0.98595953,0.0017815998,0.010993713,0.00008949011,0.00088076905],"study_design_scores_gemma":[0.0000014418675,0.0000018170957,0.000032835876,6.970248e-7,5.767791e-7,0.0000016509696,0.0000018735896,0.99906415,0.00015218687,0.0006455005,0.0000962891,9.876522e-7],"about_ca_topic_score_codex":0.009566878,"about_ca_topic_score_gemma":0.006258255,"teacher_disagreement_score":0.009566878,"about_ca_system_score_codex":0.001538845,"about_ca_system_score_gemma":0.0009076119,"threshold_uncertainty_score":0.019022405},"labels":[],"label_agreement":null},{"id":"W2314777491","doi":"10.1021/nn1033967","title":"Probing the Gate−Voltage-Dependent Surface Potential of Individual InAs Nanowires Using Random Telegraph Signals","year":2011,"lang":"en","type":"article","venue":"ACS Nano","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":22,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Toronto","funders":"","keywords":"Nanowire; Optoelectronics; Materials science; Gate voltage; Nanotechnology; Voltage; Transistor; Physics; Quantum mechanics","score_opus":0.03467691347786713,"score_gpt":0.23325375281217173,"score_spread":0.1985768393343046,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2314777491","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9837473,0.000101403515,0.0154592125,0.000030482273,0.000006655296,0.0000069200696,0.0000806281,0.000063435335,0.00050386105],"genre_scores_gemma":[0.99546,0.00008090723,0.004100985,0.0000086140035,0.0000052509467,0.000008088543,0.000040458188,0.000008030551,0.00028773557],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999052,0.000012999516,0.0000032850062,0.000029233186,0.000035086716,0.000014117599],"domain_scores_gemma":[0.9997291,0.00011379271,0.00008184457,0.00002987081,0.000029128834,0.000016288872],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00009165415,0.00014301964,0.00010201024,0.00019711039,0.00007033565,0.00023837098,0.00019061605,0.0001776035,0.0004068532],"category_scores_gemma":[0.00042969585,0.00010956823,0.000078138895,0.000114810355,0.00022200744,0.0003190022,0.00014718315,0.00018544133,0.00008180403],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000102447506,0.00002293748,0.0032811898,0.00003155718,0.000009430173,0.00006588664,0.00004129286,0.0026146048,0.9817092,0.0008384219,0.00006391722,0.011219117],"study_design_scores_gemma":[0.000015332955,0.00020385979,0.009126069,0.00000411097,0.000015091639,0.00025074632,0.000035609683,0.054966334,0.9341424,0.0005852336,0.0006350477,0.000020083986],"about_ca_topic_score_codex":0.00022221499,"about_ca_topic_score_gemma":0.000440967,"teacher_disagreement_score":0.0004068532,"about_ca_system_score_codex":0.00021947573,"about_ca_system_score_gemma":0.00008864943,"threshold_uncertainty_score":0.0015924573},"labels":[],"label_agreement":null},{"id":"W2320328319","doi":"","title":"Design of high performance quarter-micron retrograde well P-channel MOSFET","year":2008,"lang":"en","type":"dissertation","venue":"DR-NTU (Nanyang Technological University)","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":true,"ca_institutions":"","funders":"","keywords":"MOSFET; Quarter (Canadian coin); Engineering; Electrical engineering; Geography; Transistor; Voltage","score_opus":0.014744153670338685,"score_gpt":0.18612469969790002,"score_spread":0.17138054602756134,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2320328319","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.6821108,0.0012563806,0.28958735,0.00041687166,0.00012675869,0.00026937173,0.00068804267,0.0007570776,0.024787324],"genre_scores_gemma":[0.9250041,0.00039193864,0.07130517,0.000049683877,0.000012331598,0.00015445081,0.00016740411,0.00004898717,0.0028659224],"study_design_codex":"simulation_or_modeling","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999435,0.000007835403,0.0000021359806,0.0000107213355,0.000024376724,0.000011452948],"domain_scores_gemma":[0.99994504,0.0000126481145,0.000011408707,0.0000041554326,0.000019908563,0.000006815231],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00012501083,0.00024659137,0.00039503968,0.00012875505,0.00021824062,0.00041916073,0.000525553,0.0003292861,0.0010457266],"category_scores_gemma":[0.00015893417,0.0002128849,0.00025558088,0.00013211176,0.00016192425,0.00022095663,0.00012950592,0.00014946098,0.00022510298],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00020355216,0.000059938862,0.0025550951,0.0003509422,0.00010892869,0.0003191987,0.00012808316,0.7946566,0.16914934,0.0084599815,0.0018904785,0.022117848],"study_design_scores_gemma":[0.000050507802,0.00014630509,0.0008196244,0.000012243235,0.000034315923,0.00007845035,0.00003189962,0.97807705,0.017173054,0.00096681557,0.0025969974,0.000012713381],"about_ca_topic_score_codex":0.0021911843,"about_ca_topic_score_gemma":0.0034687268,"teacher_disagreement_score":0.0021911843,"about_ca_system_score_codex":0.00072849216,"about_ca_system_score_gemma":0.0011302592,"threshold_uncertainty_score":0.005285561},"labels":[],"label_agreement":null},{"id":"W2331953592","doi":"10.11159/ijtan.2012.005","title":"A Nano-Transistor Based on Gate-Induced Thermal Switching","year":2012,"lang":"en","type":"article","venue":"International Journal of Theoretical and Applied Nanotechnology","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":false,"route_ca_venue":true,"route_about_ca":false,"ca_institutions":"","funders":"Santa Fe Institute; Aspen Center for Physics; National Science Foundation","keywords":"Nanowire; Transconductance; Materials science; Optoelectronics; Transistor; Figure of merit; Gate dielectric; Picosecond; Dielectric; Nanoscopic scale; Resistor; Voltage; Nanotechnology; Electrical engineering; Physics; Engineering; Optics","score_opus":0.008066191351096201,"score_gpt":0.23045888465875197,"score_spread":0.22239269330765576,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2331953592","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.63212126,0.0050413865,0.30680272,0.0020665685,0.0020912027,0.00024704952,0.0005879993,0.0023082253,0.04873361],"genre_scores_gemma":[0.9179301,0.0011170732,0.0729366,0.000350035,0.00009653607,0.00012165909,0.000106990694,0.000043049473,0.0072979373],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999502,0.0000055071882,0.0000034281404,0.000015499385,0.00001699089,0.000008350588],"domain_scores_gemma":[0.999951,0.000014004983,0.0000072295747,0.00000754566,0.000008923895,0.00001117527],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00006104272,0.00013520068,0.00021543959,0.00009851394,0.0002089249,0.00040058684,0.0005854791,0.00053573947,0.0010771177],"category_scores_gemma":[0.00010549947,0.00010718366,0.00018666095,0.00010632936,0.0002619587,0.0005496439,0.00020343666,0.00021896303,0.00030774513],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000059406484,0.00007987075,0.00028841035,0.00016695444,0.000023204155,0.0004789823,0.000059989525,0.0028648842,0.9337695,0.04242834,0.0015578741,0.018222647],"study_design_scores_gemma":[0.00009412296,0.0007339667,0.0014524651,0.000049339415,0.000089364716,0.0016172095,0.00004642206,0.19716094,0.73838246,0.010996788,0.049296923,0.00008001241],"about_ca_topic_score_codex":0.00015684172,"about_ca_topic_score_gemma":0.00038903786,"teacher_disagreement_score":0.0010771177,"about_ca_system_score_codex":0.00019102452,"about_ca_system_score_gemma":0.00014986354,"threshold_uncertainty_score":0.0036033392},"labels":[],"label_agreement":null},{"id":"W2332755220","doi":"10.1103/physrevb.85.235316","title":"Evidence for nonlinear screening and enhancement of scattering by a single Coulomb impurity for dielectrically confined electrons in InAs nanowires","year":2012,"lang":"en","type":"article","venue":"Physical Review B","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":14,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Toronto","funders":"","keywords":"Nanowire; Condensed matter physics; Scattering; Impurity; Materials science; Coulomb; Conductance; Electron; Ionized impurity scattering; Quantum dot; Dielectric; Physics; Nanotechnology; Optoelectronics; Doping; Optics; Quantum mechanics","score_opus":0.05727412682820455,"score_gpt":0.33618431957143685,"score_spread":0.2789101927432323,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2332755220","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9980757,0.00022261041,0.0007517244,0.000035506764,0.0000036033884,0.000002220481,0.00001990038,0.000019158024,0.0008696831],"genre_scores_gemma":[0.9994715,0.000086326036,0.00025800645,0.000008910458,0.0000025431739,0.0000024235544,0.000012557447,0.0000030781857,0.00015468869],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99990857,0.000009632192,0.000006102593,0.000017818758,0.000039860257,0.0000180261],"domain_scores_gemma":[0.9997044,0.00014063001,0.00006279564,0.000022059914,0.000041632953,0.00002845944],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0001114106,0.00015529791,0.00017785466,0.00024654294,0.00019853542,0.0003412002,0.00025932878,0.00035998947,0.00060544035],"category_scores_gemma":[0.00042540522,0.00018934369,0.00011739705,0.0001526616,0.00043903652,0.00018400217,0.00020130894,0.00022637632,0.00012312847],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00013989043,0.000035501165,0.0032575047,0.000046277262,0.0000063685175,0.00025489126,0.000076932585,0.0006180363,0.9927764,0.0014478909,0.000053875403,0.0012864128],"study_design_scores_gemma":[0.000051710496,0.00030296913,0.039793238,0.00001686027,0.000029490231,0.0008818834,0.00017815713,0.030908456,0.92506623,0.0021364396,0.0006125586,0.000022046926],"about_ca_topic_score_codex":0.000518056,"about_ca_topic_score_gemma":0.0006526759,"teacher_disagreement_score":0.00060544035,"about_ca_system_score_codex":0.00021520576,"about_ca_system_score_gemma":0.00011352034,"threshold_uncertainty_score":0.0020253658},"labels":[],"label_agreement":null},{"id":"W2332878037","doi":"10.1103/physrevb.88.035132","title":"Phonon-assisted carrier motion on the Wannier-Stark ladder","year":2013,"lang":"en","type":"article","venue":"Physical Review B","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":9,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of British Columbia","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Phonon; Motion (physics); Wannier function; Optoelectronics; Condensed matter physics; Physics; Materials science; Classical mechanics","score_opus":0.0238223595164839,"score_gpt":0.2617199742645198,"score_spread":0.23789761474803592,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2332878037","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.7968018,0.00092311203,0.16520306,0.00059637945,0.00014840883,0.00009980654,0.000100904945,0.0003011417,0.03582547],"genre_scores_gemma":[0.96928376,0.00073849235,0.022902848,0.00010586655,0.0000338517,0.00008941474,0.00004729672,0.000040430034,0.0067579774],"study_design_codex":"theoretical_or_conceptual","study_design_gemma":"theoretical_or_conceptual","domain_scores_codex":[0.9996476,0.00010685815,0.0000150939,0.000030088082,0.00012105093,0.00007920406],"domain_scores_gemma":[0.9995962,0.00020190487,0.000033890297,0.000081476726,0.000043293756,0.000043403637],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0010148108,0.00035435762,0.000726101,0.0007986557,0.000844743,0.0012922266,0.0011602737,0.0011170369,0.0033239755],"category_scores_gemma":[0.0013158257,0.0003395398,0.00046645818,0.00068521505,0.0015221084,0.0017023862,0.0009202106,0.00070305064,0.0004915733],"study_design_candidate":"theoretical_or_conceptual","study_design_consensus":"theoretical_or_conceptual","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00012749573,0.000109473964,0.0006790444,0.00012844388,0.000023412704,0.000274092,0.0002783815,0.0739639,0.05256599,0.8646934,0.0003161493,0.0068401564],"study_design_scores_gemma":[0.000090559624,0.000114935894,0.0007821181,0.000044804492,0.000017958144,0.00014518246,0.000058191934,0.7577048,0.00757722,0.23186536,0.0015459637,0.00005296339],"about_ca_topic_score_codex":0.0012125394,"about_ca_topic_score_gemma":0.0013895518,"teacher_disagreement_score":0.0033239755,"about_ca_system_score_codex":0.0007526012,"about_ca_system_score_gemma":0.0007665751,"threshold_uncertainty_score":0.011119783},"labels":[],"label_agreement":null},{"id":"W2381742618","doi":"","title":"An Analytical Temperature0Dependent Kink Effect Model of PD SOI NMOSFET","year":2001,"lang":"en","type":"article","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"CAE (Canada)","funders":"","keywords":"Common emitter; Silicon on insulator; Impact ionization; Materials science; Bipolar junction transistor; Optoelectronics; Voltage drop; Drop (telecommunication); Condensed matter physics; Mechanics; Voltage; Ionization; Current (fluid); Transistor; Physics; Electrical engineering; Silicon; Thermodynamics; Engineering; Ion; Quantum mechanics","score_opus":0.020452594695663774,"score_gpt":0.27037643871737743,"score_spread":0.24992384402171366,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2381742618","genre_codex":"methods","genre_gemma":"methods","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"methods","genre_consensus":"methods","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.24585894,0.0018794163,0.7176767,0.00049117923,0.0001535304,0.00015021506,0.0006612199,0.0009062376,0.032222573],"genre_scores_gemma":[0.9760439,0.0008441756,0.011166959,0.000052723404,0.000029618503,0.00010883758,0.00013188993,0.00005433693,0.011567483],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9998462,0.000019184416,0.000005445379,0.000036909907,0.00006662151,0.000025507028],"domain_scores_gemma":[0.99991107,0.000020902542,0.000018081277,0.00001230089,0.000031975716,0.000005634702],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00012845792,0.00039854538,0.0004990106,0.0002697969,0.00029206675,0.00043175332,0.0010299506,0.00075160677,0.001119927],"category_scores_gemma":[0.0003358345,0.00030638356,0.00042983986,0.00023641088,0.00036861582,0.00082617416,0.00021514072,0.0002866504,0.000327569],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00006127435,0.000019650392,0.00040687053,0.000085945605,0.000027412998,0.00023870775,0.00013407414,0.93609923,0.043233596,0.014855041,0.0005002677,0.0043379376],"study_design_scores_gemma":[0.0000025018746,0.000015437678,0.00011192918,0.00000290592,0.0000048222873,0.00004050452,0.000005822322,0.9965838,0.0015352194,0.0012579167,0.00043471402,0.0000044044564],"about_ca_topic_score_codex":0.004122578,"about_ca_topic_score_gemma":0.0036216048,"teacher_disagreement_score":0.004122578,"about_ca_system_score_codex":0.0010220192,"about_ca_system_score_gemma":0.00048365354,"threshold_uncertainty_score":0.008197188},"labels":[],"label_agreement":null},{"id":"W2394731694","doi":"10.1002/9781119155850.ch4","title":"From Scaling‐Driven Technological Variations to Novel Dimensions in MISFETs","year":2016,"lang":"en","type":"other","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":2,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Concordia University","funders":"","keywords":"MOSFET; Scaling; Transistor; Silicon on insulator; Materials science; Nanowire; Field-effect transistor; Nanoelectronics; Nanotechnology; Short-channel effect; Scalability; Optoelectronics; Electronic engineering; Engineering physics; Electrical engineering; Silicon; Computer science; Voltage; Engineering","score_opus":0.018697913645359117,"score_gpt":0.256469392947321,"score_spread":0.2377714793019619,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2394731694","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.47512746,0.053780515,0.24967673,0.0070065623,0.0020665643,0.000107451924,0.0007338208,0.0020291442,0.20947173],"genre_scores_gemma":[0.93763524,0.011897479,0.034242682,0.00039455,0.0005285146,0.00006755864,0.00011695851,0.00019580068,0.014921208],"study_design_codex":"theoretical_or_conceptual","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998276,0.00002343816,0.0000076143815,0.000036296056,0.00008582698,0.000019177216],"domain_scores_gemma":[0.999814,0.00006695669,0.0000352732,0.000044224023,0.00002769372,0.000011997679],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00020222814,0.0003309645,0.00028773714,0.00030758526,0.00036423779,0.0011469611,0.00055755075,0.0005376076,0.0019253149],"category_scores_gemma":[0.00072245003,0.00019542522,0.00022295205,0.00041171737,0.0010475492,0.0017451397,0.000577737,0.0006266781,0.00039169248],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0000832799,0.00003688861,0.0013402429,0.00029046673,0.000022956467,0.00094084395,0.0006419502,0.036398605,0.07149436,0.81916094,0.004907651,0.06468174],"study_design_scores_gemma":[0.000023746421,0.00021170708,0.0032033515,0.00015336632,0.000034749773,0.002503689,0.0005039211,0.11318261,0.05503295,0.6369277,0.18812151,0.00010069814],"about_ca_topic_score_codex":0.00025710862,"about_ca_topic_score_gemma":0.0004374272,"teacher_disagreement_score":0.0019253149,"about_ca_system_score_codex":0.00064215926,"about_ca_system_score_gemma":0.00019912577,"threshold_uncertainty_score":0.0064408183},"labels":[],"label_agreement":null},{"id":"W2414490626","doi":"10.1109/ted.2016.2572719","title":"Effective Drive Current for Pass-Gate Transistors","year":2016,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":10,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Transistor; CMOS; Computer science; Electrical engineering; Electronic engineering; Physics; Topology (electrical circuits); Algorithm; Voltage; Optoelectronics; Engineering","score_opus":0.011663053404151138,"score_gpt":0.2524135424654895,"score_spread":0.2407504890613384,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2414490626","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.023150347,0.0016305399,0.9478093,0.00020301543,0.00015192876,0.00009434622,0.00027746512,0.0010845818,0.025598438],"genre_scores_gemma":[0.7242931,0.002678364,0.23541468,0.00040422406,0.0002262122,0.00035083355,0.00072474306,0.0004560106,0.035451815],"study_design_codex":"simulation_or_modeling","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9995461,0.000052644147,0.000030840383,0.00009697655,0.0002286016,0.000044740285],"domain_scores_gemma":[0.9996131,0.00013892075,0.00006160111,0.000060284685,0.000115365896,0.000010704565],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0003652624,0.00090107875,0.0003123751,0.00057681376,0.0002489281,0.0010785136,0.0016327206,0.00068212574,0.0028974076],"category_scores_gemma":[0.0016051327,0.00023644019,0.0003898091,0.0004274806,0.00039448723,0.0016224125,0.00042796013,0.00057316496,0.0013328703],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0001996959,0.000100668934,0.0020884934,0.00067801255,0.00010348889,0.0008944634,0.00051741436,0.29428282,0.27399853,0.24631357,0.011040494,0.16978239],"study_design_scores_gemma":[0.000011765858,0.0001345227,0.00069901336,0.000039387938,0.00004439389,0.00058777333,0.000042622236,0.8811857,0.06933749,0.021090277,0.02679079,0.00003626065],"about_ca_topic_score_codex":0.00076923764,"about_ca_topic_score_gemma":0.0014261615,"teacher_disagreement_score":0.0028974076,"about_ca_system_score_codex":0.0010807172,"about_ca_system_score_gemma":0.00035658595,"threshold_uncertainty_score":0.009692788},"labels":[],"label_agreement":null},{"id":"W2440455119","doi":"10.1021/acs.nanolett.5b01795","title":"Lithography-Free Fabrication of Core–Shell GaAs Nanowire Tunnel Diodes","year":2015,"lang":"en","type":"article","venue":"Nano Letters","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":15,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Simon Fraser University","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Nanowire; Fabrication; Materials science; Diode; Lithography; Optoelectronics; Core (optical fiber); Nanotechnology; Composite material","score_opus":0.036595598550558835,"score_gpt":0.23665651520095107,"score_spread":0.20006091665039225,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2440455119","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.88600254,0.0010802048,0.09932392,0.0001504573,0.00016011577,0.00016888176,0.00061878806,0.0008543999,0.011640764],"genre_scores_gemma":[0.91154623,0.000581398,0.0828335,0.00003426977,0.000011119601,0.0000963887,0.00025800808,0.00007868922,0.004560413],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999012,0.0000074997865,0.000007124464,0.000026962345,0.000041758387,0.000015452179],"domain_scores_gemma":[0.9999064,0.000022652417,0.000020986214,0.000024842371,0.00001568378,0.000009371484],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00009230337,0.0003080607,0.00026467984,0.00013109979,0.00018833108,0.00028476762,0.00036347017,0.00025443133,0.0010986243],"category_scores_gemma":[0.00023480627,0.0003039965,0.0001973671,0.00012856956,0.00018522821,0.00024678707,0.00042645785,0.0003668801,0.00052756566],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000012055211,0.000008326616,0.000065119784,0.000031017218,0.0000035239932,0.000064620595,0.00001661048,0.00034305276,0.99594766,0.000587618,0.00006175881,0.0028584735],"study_design_scores_gemma":[0.000007668844,0.00004311066,0.00053654105,0.000004008799,0.0000028119375,0.00013669737,0.000008161612,0.0029201137,0.99433076,0.00013538495,0.0018697963,0.000004880088],"about_ca_topic_score_codex":0.0002860108,"about_ca_topic_score_gemma":0.0008082168,"teacher_disagreement_score":0.0010986243,"about_ca_system_score_codex":0.00020467877,"about_ca_system_score_gemma":0.00021522465,"threshold_uncertainty_score":0.003675282},"labels":[],"label_agreement":null},{"id":"W2477064628","doi":"10.1109/asicon.2015.7516983","title":"Future low-noise technologies for RF, analog and mixed-signal integrated circuits","year":2015,"lang":"en","type":"article","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McMaster University","funders":"Royal North Shore Hospital","keywords":"CMOS; Mixed-signal integrated circuit; Electronic engineering; Noise (video); Integrated circuit; Electrical engineering; Radio frequency; Electronic circuit; Analogue electronics; Node (physics); Computer science; Materials science; Engineering","score_opus":0.02205630828164638,"score_gpt":0.23607981521808408,"score_spread":0.2140235069364377,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2477064628","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.61589664,0.017937385,0.33550435,0.0017456242,0.00043016832,0.00019867907,0.00043903806,0.001176602,0.026671553],"genre_scores_gemma":[0.8570467,0.0034302073,0.13023026,0.0003302698,0.00012453053,0.00009136674,0.00030534118,0.00012157319,0.00831975],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9994518,0.00007783647,0.000020027308,0.000074187985,0.00032547594,0.00005069024],"domain_scores_gemma":[0.9995577,0.00014253477,0.00006898607,0.000044992954,0.00015929817,0.00002649041],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0007096018,0.00045452645,0.00037169945,0.00024475125,0.000312826,0.0009109565,0.00072376314,0.0005568837,0.0017872374],"category_scores_gemma":[0.0011170065,0.00016101646,0.00021119678,0.00021807273,0.0003526885,0.0013817706,0.00021139681,0.0003507558,0.00077158585],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0002622064,0.00013982714,0.0032058824,0.0004160795,0.000048725058,0.0002781803,0.00014765789,0.012269291,0.91556543,0.025209112,0.0010598539,0.04139791],"study_design_scores_gemma":[0.000046026264,0.0025944288,0.004870972,0.00012516105,0.00017747862,0.0011407973,0.00019182732,0.1003972,0.8232582,0.008531991,0.05859594,0.00006993079],"about_ca_topic_score_codex":0.00040001044,"about_ca_topic_score_gemma":0.0012447543,"teacher_disagreement_score":0.0017872374,"about_ca_system_score_codex":0.0005727466,"about_ca_system_score_gemma":0.00029178508,"threshold_uncertainty_score":0.005978942},"labels":[],"label_agreement":null},{"id":"W2483497274","doi":"10.1016/b0-12-369401-9/01123-2","title":"Transport in Two-Dimensional Semiconductors","year":2005,"lang":"en","type":"book-chapter","venue":"Elsevier eBooks","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":2,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Institute for Microstructural Sciences","funders":"","keywords":"Semiconductor; Psychology; Materials science; Optoelectronics","score_opus":0.01677611983752485,"score_gpt":0.2400328412354555,"score_spread":0.22325672139793065,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2483497274","genre_codex":"other","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.017681956,0.10899104,0.0739477,0.0028646847,0.0059954585,0.00009538772,0.0007846623,0.0019532584,0.7876859],"genre_scores_gemma":[0.10181438,0.07678161,0.03926364,0.0007728356,0.0010478297,0.00033242558,0.0019187746,0.00054281636,0.77752566],"study_design_codex":"theoretical_or_conceptual","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999101,0.0000073343685,0.0000045039974,0.00001457248,0.0000526918,0.000010707572],"domain_scores_gemma":[0.9999378,0.000025574669,0.0000027938977,0.000011659784,0.000014690415,0.0000075708463],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00012660961,0.0007484779,0.0009429178,0.00075871625,0.0005444042,0.0017708272,0.00074261084,0.0010278431,0.015676092],"category_scores_gemma":[0.00016396644,0.00046294983,0.00042223991,0.0010768618,0.0007471873,0.0016928215,0.0006903168,0.0010918498,0.005035079],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00007711191,0.00012524928,0.00010031158,0.0012019908,0.000028915201,0.00029495446,0.00026397736,0.0064825104,0.025875518,0.72855645,0.07754779,0.15944529],"study_design_scores_gemma":[0.000035373865,0.000047906688,0.00040146182,0.00036643722,0.000013840708,0.00052511215,0.000081100414,0.02580972,0.00717989,0.5305449,0.43494883,0.000045530232],"about_ca_topic_score_codex":0.0006083731,"about_ca_topic_score_gemma":0.00072610134,"teacher_disagreement_score":0.015676092,"about_ca_system_score_codex":0.0007537244,"about_ca_system_score_gemma":0.00043281526,"threshold_uncertainty_score":0.052441716},"labels":[],"label_agreement":null},{"id":"W2514419522","doi":"10.1149/ma2005-01/12/535","title":"High Performance SOI Technology for Sub-45nm Gate Length CMOS Manufacturing","year":2006,"lang":"en","type":"article","venue":"ECS Meeting Abstracts","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Advanced Micro Devices (Canada)","funders":"","keywords":"Silicon on insulator; CMOS; Materials science; Optoelectronics; Electronic engineering; Electrical engineering; Engineering; Silicon","score_opus":0.010127744967074309,"score_gpt":0.20778991079103623,"score_spread":0.19766216582396193,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2514419522","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.6029271,0.015378455,0.12185899,0.003736272,0.0022934277,0.00051768107,0.00411185,0.0038558189,0.24532036],"genre_scores_gemma":[0.91198426,0.0042813295,0.052158512,0.00021886626,0.00017031738,0.00011853363,0.001779326,0.00016840699,0.029120408],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999112,0.0000064267406,0.000004048017,0.000009032904,0.000052372376,0.000016932578],"domain_scores_gemma":[0.99989676,0.000015209373,0.00001313692,0.000023762312,0.00004107925,0.0000100165025],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00014517088,0.00022215991,0.0001680136,0.00021950419,0.00027258752,0.00036535447,0.00036568308,0.00025583807,0.0073233778],"category_scores_gemma":[0.00021180477,0.00010507227,0.00015529509,0.00030708598,0.00013012746,0.00044430667,0.00020476409,0.00021105987,0.0020506217],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00020574234,0.000055196062,0.0009630951,0.0004545358,0.000027073984,0.0002565836,0.00010470557,0.0019330055,0.9104965,0.011953101,0.017770901,0.05577965],"study_design_scores_gemma":[0.000068841815,0.0012087111,0.009365821,0.00011548597,0.000118924174,0.00090131146,0.00017822078,0.022238135,0.69796276,0.0062161735,0.26158753,0.000038115788],"about_ca_topic_score_codex":0.00054784655,"about_ca_topic_score_gemma":0.0020578944,"teacher_disagreement_score":0.0073233778,"about_ca_system_score_codex":0.00032029522,"about_ca_system_score_gemma":0.0003047905,"threshold_uncertainty_score":0.024499178},"labels":[],"label_agreement":null},{"id":"W2517249789","doi":"10.1002/jnm.2185","title":"Accurate modeling of pHEMT output current derivatives over a wide temperature range","year":2016,"lang":"en","type":"article","venue":"International Journal of Numerical Modelling Electronic Networks Devices and Fields","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":8,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Carleton University","funders":"","keywords":"High-electron-mobility transistor; Atmospheric temperature range; Range (aeronautics); Transistor; Materials science; Current (fluid); Voltage; Biasing; Biological system; Electronic engineering; Optoelectronics; Electrical engineering; Thermodynamics; Physics; Engineering; Composite material; Biology","score_opus":0.0188336852553576,"score_gpt":0.25741537498944916,"score_spread":0.23858168973409155,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2517249789","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.7072695,0.00083870057,0.28088632,0.00020612834,0.000050409206,0.000037434693,0.00029211404,0.0008813386,0.009538094],"genre_scores_gemma":[0.99653494,0.000090787194,0.0023785997,0.000007681996,0.000003138672,0.0000090110625,0.000030475252,0.000021178956,0.0009241973],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9999106,0.000014335785,0.0000033615215,0.000021774988,0.000037880178,0.00001199686],"domain_scores_gemma":[0.999876,0.00004867432,0.00002228477,0.000020100613,0.00002840345,0.000004555691],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00013050708,0.00032994096,0.00022096065,0.0001598383,0.0001492297,0.00026088918,0.0004351012,0.0004722866,0.00047627973],"category_scores_gemma":[0.00041467726,0.00015133806,0.00035378765,0.00016386234,0.00023356636,0.00050125737,0.00015838955,0.00029660962,0.00013099032],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00004050059,0.00001649066,0.0016090822,0.000046100053,0.000022425736,0.00018460468,0.00006613088,0.93889004,0.051709887,0.0011565934,0.00019075714,0.0060674874],"study_design_scores_gemma":[0.000001501949,0.0000125303295,0.00061698735,0.0000020241291,0.0000035420956,0.000022974362,0.0000046294313,0.9917788,0.007072278,0.00022336545,0.00025784955,0.000003471532],"about_ca_topic_score_codex":0.0034114427,"about_ca_topic_score_gemma":0.002520821,"teacher_disagreement_score":0.0034114427,"about_ca_system_score_codex":0.00049210776,"about_ca_system_score_gemma":0.00027199404,"threshold_uncertainty_score":0.0067831874},"labels":[],"label_agreement":null},{"id":"W2517284405","doi":"10.1021/acs.nanolett.6b01800","title":"Surface Properties from Transconductance in Nanoscale Systems","year":2016,"lang":"en","type":"article","venue":"Nano Letters","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":11,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Toronto","funders":"","keywords":"Nanowire; Transconductance; Materials science; Conductance; Nanoscopic scale; Optoelectronics; Field-effect transistor; Transistor; Condensed matter physics; Scaling; Surface states; Nanotechnology; Voltage; Surface (topology); Physics","score_opus":0.02292372456752027,"score_gpt":0.1971903654677789,"score_spread":0.17426664090025865,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2517284405","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.90271753,0.0056318264,0.04646337,0.0008081714,0.00010101223,0.00003803894,0.00060201564,0.0011030434,0.042534977],"genre_scores_gemma":[0.9967643,0.00048572774,0.00160738,0.00003325411,0.000015097215,0.000008359337,0.000088022694,0.000036476686,0.000961448],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99992406,0.0000070639926,0.0000031205884,0.000019572957,0.00003403627,0.000012089639],"domain_scores_gemma":[0.9998072,0.00008178495,0.00002677903,0.00003379548,0.00004382955,0.000006603051],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0001201783,0.00025691505,0.00016476652,0.0004831653,0.00013558735,0.0004954925,0.00022738177,0.00030189072,0.0014577294],"category_scores_gemma":[0.0007941244,0.00012570305,0.00012156427,0.0002608638,0.0003176517,0.0006767397,0.00020728397,0.000341176,0.00043568248],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00007651424,0.00004885273,0.0034885034,0.00030628516,0.00003584417,0.0005152749,0.00051903573,0.024196245,0.9042146,0.033098504,0.0010415885,0.032458667],"study_design_scores_gemma":[0.000025206997,0.00032596535,0.01627848,0.00010067675,0.00004876276,0.001654643,0.00024938444,0.27288193,0.61610126,0.076717764,0.015538833,0.00007717344],"about_ca_topic_score_codex":0.00028456567,"about_ca_topic_score_gemma":0.00025579197,"teacher_disagreement_score":0.0014577294,"about_ca_system_score_codex":0.0002373287,"about_ca_system_score_gemma":0.0000755481,"threshold_uncertainty_score":0.004876554},"labels":[],"label_agreement":null},{"id":"W2533446115","doi":"10.1109/lpe.1995.482471","title":"Low threshold voltage quarter micron MOSFETs for low power applications","year":2002,"lang":"en","type":"article","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":5,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":true,"ca_institutions":"","funders":"","keywords":"Threshold voltage; Standby power; Scaling; Materials science; Electrical engineering; MOSFET; Voltage; Low voltage; Optoelectronics; Power (physics); Channel (broadcasting); Low-power electronics; Quarter (Canadian coin); Logic gate; Power semiconductor device; Electronic engineering; Transistor; Engineering; Physics; Power consumption","score_opus":0.0140984001457653,"score_gpt":0.2196616749569439,"score_spread":0.2055632748111786,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2533446115","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.94120806,0.0063176635,0.035841838,0.0007904173,0.00038561155,0.00013707978,0.0007626035,0.0008296943,0.013726948],"genre_scores_gemma":[0.9419695,0.0022590258,0.042289186,0.00022379676,0.000056588837,0.00007407873,0.00048198452,0.000045793528,0.012600009],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99993193,0.000007181562,0.0000037227371,0.000012664182,0.000032099822,0.000012423558],"domain_scores_gemma":[0.99979264,0.000052662755,0.00003471182,0.000019998119,0.00007486378,0.000025210482],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00011506365,0.00020125347,0.00023356415,0.00014471382,0.00020459351,0.00036352995,0.00045341253,0.0003160242,0.0026838724],"category_scores_gemma":[0.00039543508,0.00014323078,0.00010692232,0.00016314363,0.00017390875,0.0004046745,0.00014493341,0.0002816305,0.00057259924],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000080714,0.000020558558,0.0007117421,0.0001687934,0.00000824867,0.00012173906,0.000054578784,0.00049795816,0.97546035,0.0016568003,0.0015537607,0.01966477],"study_design_scores_gemma":[0.00009725386,0.0017817866,0.013578725,0.000055793837,0.00007849815,0.0017293846,0.00013570613,0.024796324,0.8960755,0.0042188084,0.057414517,0.00003777253],"about_ca_topic_score_codex":0.0007437298,"about_ca_topic_score_gemma":0.0023288843,"teacher_disagreement_score":0.0026838724,"about_ca_system_score_codex":0.00036248707,"about_ca_system_score_gemma":0.0003014935,"threshold_uncertainty_score":0.008978486},"labels":[],"label_agreement":null},{"id":"W2537676546","doi":"10.1109/icm.2006.373642","title":"A High Compliance Input and Output Regulated Body-Driven Current Mirror for Deep-Submicron CMOS","year":2006,"lang":"en","type":"article","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":10,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Dalhousie University","funders":"","keywords":"Microelectronics; Current mirror; CMOS; Process (computing); Chip; Voltage; Amplifier; Electronic engineering; MOSFET; Computer science; Electrical engineering; Materials science; Optoelectronics; Engineering; Transistor","score_opus":0.028525840581401184,"score_gpt":0.25445814683176443,"score_spread":0.22593230625036326,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2537676546","genre_codex":"methods","genre_gemma":"methods","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"methods","genre_consensus":"methods","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.30351287,0.0014411184,0.6729903,0.000724167,0.0005794452,0.0003320756,0.0002726714,0.004395876,0.015751397],"genre_scores_gemma":[0.8814694,0.00017947826,0.112928025,0.0001641525,0.00008288269,0.0000701202,0.00006154597,0.00005754063,0.0049867365],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99981266,0.0000217278,0.000011525118,0.000026310654,0.00010912965,0.00001859807],"domain_scores_gemma":[0.99975485,0.0000477575,0.000049018658,0.00004797708,0.000078812285,0.000021656293],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0002467706,0.00023885122,0.00021207637,0.00013108541,0.0002705444,0.0003901521,0.0010056697,0.0003709624,0.0013725418],"category_scores_gemma":[0.00033630422,0.00015601241,0.00018566498,0.00010029346,0.00017321549,0.00038287032,0.00024036929,0.00027970222,0.0004229538],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000104729515,0.00003880129,0.00040607346,0.00008747541,0.000018261902,0.00017213098,0.00007930823,0.0015656325,0.9573155,0.0055896076,0.0014924632,0.033130072],"study_design_scores_gemma":[0.000116386116,0.0011001545,0.0019962988,0.00004592288,0.0000762043,0.0012535887,0.000031089574,0.11113373,0.86218816,0.0018704443,0.020134402,0.000053719712],"about_ca_topic_score_codex":0.00045990988,"about_ca_topic_score_gemma":0.0010900233,"teacher_disagreement_score":0.0013725418,"about_ca_system_score_codex":0.0003886527,"about_ca_system_score_gemma":0.00042197676,"threshold_uncertainty_score":0.004591644},"labels":[],"label_agreement":null},{"id":"W2540054844","doi":"10.1109/idt.2011.6123104","title":"An electrical-aware parametric DFM solution for analog circuits","year":2011,"lang":"en","type":"article","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Design for manufacturability; Parametric statistics; Computer science; Electronic circuit; Analogue electronics; Electronic engineering; Electrical engineering; Engineering","score_opus":0.06005127750986996,"score_gpt":0.2623598824752275,"score_spread":0.20230860496535755,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2540054844","genre_codex":"methods","genre_gemma":"methods","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"methods","genre_consensus":"methods","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.007455283,0.00025189694,0.9867194,0.00013455634,0.00003282391,0.00003289756,0.00003952657,0.00073722214,0.004596285],"genre_scores_gemma":[0.41604248,0.0005411408,0.5748476,0.0001868594,0.00007132918,0.00012674904,0.00012384361,0.00013412286,0.007925938],"study_design_codex":"design_other","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99978024,0.000031164207,0.000008494978,0.00003161479,0.00012965413,0.000018911316],"domain_scores_gemma":[0.9998147,0.000057788115,0.000025899539,0.00004903071,0.000047888476,0.0000047797243],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0002314473,0.0005227492,0.00023299742,0.0003080795,0.00034742246,0.0004818366,0.000842481,0.00051866204,0.0031559228],"category_scores_gemma":[0.0008416417,0.0001926778,0.00037372188,0.00021931363,0.00022241466,0.00059774745,0.00054716365,0.00052683876,0.0006183314],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00010915348,0.00008046232,0.0007119031,0.00027522733,0.000048795602,0.00017205316,0.00013587181,0.2803141,0.11315768,0.04486621,0.0043995418,0.5557291],"study_design_scores_gemma":[0.000021850345,0.00021338536,0.00031624525,0.000038181126,0.000029045503,0.00030287827,0.000048064183,0.9237918,0.029036146,0.017927526,0.02825475,0.000020050047],"about_ca_topic_score_codex":0.00057635404,"about_ca_topic_score_gemma":0.0012239168,"teacher_disagreement_score":0.0031559228,"about_ca_system_score_codex":0.00038524816,"about_ca_system_score_gemma":0.00037999483,"threshold_uncertainty_score":0.010557592},"labels":[],"label_agreement":null},{"id":"W2548244308","doi":"10.1109/iedm.2005.1609315","title":"Integration and optimization of embedded-sige, compressive and tensile stressed liner films, and stress memorization in advanced SOI CMOS technologies","year":2005,"lang":"en","type":"article","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":63,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Advanced Micro Devices (Canada)","funders":"","keywords":"PMOS logic; NMOS logic; Materials science; CMOS; Stress (linguistics); Silicon on insulator; Strain engineering; Optoelectronics; Transistor; Ultimate tensile strength; Compressive strength; Electronic engineering; Electrical engineering; Composite material; Silicon; Engineering; Voltage","score_opus":0.00851460479111349,"score_gpt":0.22493715388616464,"score_spread":0.21642254909505115,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2548244308","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9921091,0.0006543949,0.0053442386,0.000048107657,0.000016235663,0.000020296842,0.00005079699,0.00019512145,0.0015616796],"genre_scores_gemma":[0.9849568,0.00034595994,0.013104225,0.000022239576,0.000019928999,0.000026478316,0.00010386362,0.00004079665,0.0013796428],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998554,0.0000109580105,0.0000078981875,0.000028005083,0.000073107454,0.000024731848],"domain_scores_gemma":[0.99983525,0.000018897716,0.0000688371,0.000018996048,0.00004344674,0.000014432644],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00008608041,0.00031680788,0.00020898967,0.00016047573,0.00014130998,0.00032092,0.00039953235,0.00019973636,0.00044343062],"category_scores_gemma":[0.00024491813,0.00020336336,0.0001581312,0.00015315968,0.00014615871,0.00031354558,0.00021628385,0.00013520301,0.0001180774],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00006401002,0.000028986547,0.0008294243,0.000048606333,0.000013548575,0.00006945578,0.000029503846,0.0036760422,0.9858159,0.0003130422,0.000104799416,0.009006708],"study_design_scores_gemma":[0.000042201955,0.0013198857,0.0077856584,0.000012202243,0.00006712489,0.00038045633,0.000037221715,0.018207775,0.96766853,0.00024047335,0.0042174472,0.000021067508],"about_ca_topic_score_codex":0.00054371706,"about_ca_topic_score_gemma":0.0014562884,"teacher_disagreement_score":0.00054371706,"about_ca_system_score_codex":0.00028488517,"about_ca_system_score_gemma":0.00023294166,"threshold_uncertainty_score":0.0020669699},"labels":[],"label_agreement":null},{"id":"W2561680259","doi":"","title":"Simulation of High-Frequency Scaling of Silicon MOSFETs and the Golden Transistor","year":2016,"lang":"en","type":"dissertation","venue":"TSpace (University of Toronto)","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":true,"ca_institutions":"","funders":"","keywords":"Scaling; Transistor; Silicon; MOSFET; Optoelectronics; Frequency scaling; Electrical engineering; Materials science; Electronic engineering; Engineering; Mathematics; Voltage","score_opus":0.010396175731572418,"score_gpt":0.22522611737131606,"score_spread":0.21482994163974364,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2561680259","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9125524,0.0002567743,0.055572923,0.00045242495,0.000046769524,0.00003275946,0.00034020573,0.00028024995,0.030465376],"genre_scores_gemma":[0.99047893,0.000093217124,0.0075838747,0.000031058997,0.000005980111,0.0000225729,0.00010686958,0.000035285768,0.0016420287],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9999286,0.000014840825,0.0000021604405,0.000008603066,0.00002852792,0.000017314911],"domain_scores_gemma":[0.9997882,0.00011710329,0.00001838191,0.000022535289,0.00003899962,0.00001477779],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000192561,0.00018884841,0.00024222824,0.00016942514,0.0002473904,0.00036422978,0.0004900948,0.0005237602,0.0012650008],"category_scores_gemma":[0.00074941217,0.00017464871,0.00031663818,0.00016882847,0.00037062715,0.0004201845,0.0001816078,0.00028021366,0.00015597315],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000032214404,0.000016370366,0.0013189301,0.000027318794,0.000012950248,0.00006821923,0.000059554044,0.98119146,0.0058270562,0.008175636,0.00033786576,0.0029323944],"study_design_scores_gemma":[0.0000032305293,0.0000055879364,0.00022473783,0.0000016464734,0.0000012599953,0.000008349123,0.0000066044736,0.9980161,0.000648948,0.0008237198,0.00025796785,0.0000018284145],"about_ca_topic_score_codex":0.0074316184,"about_ca_topic_score_gemma":0.0049152006,"teacher_disagreement_score":0.0074316184,"about_ca_system_score_codex":0.0007095751,"about_ca_system_score_gemma":0.00050189235,"threshold_uncertainty_score":0.014776766},"labels":[],"label_agreement":null},{"id":"W2588641186","doi":"10.1109/ted.2017.2655520","title":"Impact of Short-Wavelength and Long-Wavelength Line-Edge Roughness on the Variability of Ultrascaled FinFETs","year":2017,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":6,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Alberta","funders":"Natural Sciences and Engineering Research Council of Canada; Alberta Innovates - Technology Futures; International Business Machines Corporation","keywords":"Surface finish; Wavelength; Amplitude; Saturation (graph theory); Physics; Threshold voltage; Voltage; Enhanced Data Rates for GSM Evolution; Optoelectronics; Surface roughness; Line (geometry); Materials science; Computational physics; Condensed matter physics; Optics; Computer science; Telecommunications; Quantum mechanics; Transistor; Mathematics","score_opus":0.026831860724177994,"score_gpt":0.2879568110637094,"score_spread":0.2611249503395314,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2588641186","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99583375,0.000067364184,0.0032366435,0.000044149154,0.000006279526,0.000003590566,0.00005302402,0.000046853547,0.00070832454],"genre_scores_gemma":[0.9995672,0.000017505101,0.0003164592,0.000005600919,0.000001768848,0.0000022308534,0.000019471872,0.0000069864755,0.00006275146],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9998714,0.000022750124,0.0000065314794,0.000028754685,0.000037425398,0.000033101995],"domain_scores_gemma":[0.99935395,0.000380772,0.000104711595,0.000062340805,0.00006285479,0.000035303467],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00027112206,0.00027013922,0.00028512324,0.0002452392,0.0002715771,0.00043228274,0.0003767237,0.00037275674,0.00051370915],"category_scores_gemma":[0.0011730046,0.00016408482,0.0003197762,0.0002566964,0.0003629999,0.000521923,0.00023299431,0.0002928511,0.00004356288],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00012895634,0.00008423982,0.012844569,0.000046897883,0.000082759514,0.0002819304,0.00008215558,0.9154916,0.064915,0.0019596172,0.00017575212,0.003906482],"study_design_scores_gemma":[0.0000058744054,0.00006255422,0.0042841085,0.0000031300237,0.000012516131,0.000027028449,0.000022149336,0.9869387,0.008200557,0.00035481196,0.00007454671,0.000014041056],"about_ca_topic_score_codex":0.0033313106,"about_ca_topic_score_gemma":0.0038628627,"teacher_disagreement_score":0.0033313106,"about_ca_system_score_codex":0.00070770807,"about_ca_system_score_gemma":0.00033589936,"threshold_uncertainty_score":0.0066238046},"labels":[],"label_agreement":null},{"id":"W2592725344","doi":"10.1149/ma2006-02/24/1187","title":"Analysis of Sensitivity and Scaling of Charge-Sensitive BioFETS using Computationally Efficient Approximations and the Charge-Sheet Model","year":2006,"lang":"en","type":"article","venue":"ECS Meeting Abstracts","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"National Research Council Canada","funders":"","keywords":"Charge (physics); Scaling; Sensitivity (control systems); Statistical physics; Physics; Computational physics; Mathematics; Engineering; Electronic engineering; Quantum mechanics; Geometry","score_opus":0.01707886798510391,"score_gpt":0.23545155624525207,"score_spread":0.21837268826014816,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2592725344","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.81639946,0.0016113385,0.16573913,0.0014826956,0.00018348622,0.00013326838,0.0005451701,0.0007253527,0.013180222],"genre_scores_gemma":[0.9940164,0.00023559359,0.0048544123,0.00007221766,0.000016524536,0.000037294667,0.00008595031,0.000043476943,0.00063826964],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9996196,0.00012781826,0.000013521373,0.00005045093,0.00012564921,0.00006302688],"domain_scores_gemma":[0.99359185,0.0055334256,0.00020335757,0.00034768306,0.0002533156,0.00007033958],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0013504584,0.0006800664,0.00063842273,0.0007136073,0.00042051345,0.0007433518,0.0009826608,0.0011716578,0.0019018658],"category_scores_gemma":[0.012298729,0.00040073425,0.0005326335,0.00054026826,0.0007914018,0.0013908619,0.0008125857,0.0009291087,0.00015033614],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00016167155,0.000052619078,0.0009652804,0.00015145488,0.00005010133,0.0001845129,0.00006540493,0.96411914,0.015472964,0.014107485,0.00054616836,0.00412311],"study_design_scores_gemma":[0.000003187924,0.000015260368,0.0001920388,0.000006112807,0.000004802612,0.000015001588,0.0000070387237,0.9956291,0.0019188953,0.0021219135,0.0000791667,0.0000074974646],"about_ca_topic_score_codex":0.0048375204,"about_ca_topic_score_gemma":0.0018742444,"teacher_disagreement_score":0.0048375204,"about_ca_system_score_codex":0.00096988684,"about_ca_system_score_gemma":0.000455422,"threshold_uncertainty_score":0.0096187},"labels":[],"label_agreement":null},{"id":"W2602667312","doi":"10.1149/ma2006-02/33/1594","title":"Hole Mobility in Pentacene Field-effect Thin Film Transistors","year":2006,"lang":"en","type":"article","venue":"ECS Meeting Abstracts","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Victoria","funders":"","keywords":"Pentacene; Thin-film transistor; Materials science; Optoelectronics; Field effect; Field-effect transistor; Electron mobility; Transistor; Nanotechnology; Electrical engineering; Engineering; Voltage","score_opus":0.009958155937104252,"score_gpt":0.22817602046570762,"score_spread":0.21821786452860337,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2602667312","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.98997796,0.0020664544,0.0010754518,0.0004020148,0.00015568017,0.000017262431,0.00025240652,0.00006156134,0.005991088],"genre_scores_gemma":[0.9946337,0.0007230528,0.00038395848,0.000031595388,0.000021583568,0.000007101335,0.0001072665,0.0000096656295,0.0040821526],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999536,0.000003678046,0.0000013380101,0.000010355935,0.000017485201,0.000013443382],"domain_scores_gemma":[0.9999101,0.000053537555,0.00000734255,0.000006283267,0.000011837833,0.000010864353],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00011572209,0.00018247531,0.00021303946,0.0002681058,0.00022618688,0.00039826354,0.0003530954,0.0002289876,0.0032855896],"category_scores_gemma":[0.00032409767,0.00010320009,0.000079431775,0.00014507677,0.0002280296,0.00052353134,0.00015775258,0.00025581464,0.00023721083],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0010367897,0.0001528896,0.0014140934,0.00030194092,0.000039739967,0.0012035405,0.00024439846,0.0023313393,0.9715773,0.0065946,0.0020108654,0.013092577],"study_design_scores_gemma":[0.00021368483,0.0010369675,0.0065846187,0.00008945977,0.00008500549,0.0008561842,0.0004000396,0.030244498,0.94887495,0.0043719537,0.0072017745,0.000040915344],"about_ca_topic_score_codex":0.0014658272,"about_ca_topic_score_gemma":0.0019292873,"teacher_disagreement_score":0.0032855896,"about_ca_system_score_codex":0.00031776863,"about_ca_system_score_gemma":0.00015616839,"threshold_uncertainty_score":0.0109913945},"labels":[],"label_agreement":null},{"id":"W2604428161","doi":"10.1109/edaps.2016.7893096","title":"Tutorial III: RF hardware abstraction for design automation of intelligent RF modules award","year":2016,"lang":"en","type":"article","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"École de Technologie Supérieure","funders":"","keywords":"Abstraction; Computer science; Electronic design automation; Automation; Computer architecture; Electronic circuit; Embedded system; Computer hardware; Digital electronics; Radio frequency; Circuit design; Electrical engineering; Engineering; Telecommunications","score_opus":0.03916322412613518,"score_gpt":0.2668645361435977,"score_spread":0.2277013120174625,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2604428161","genre_codex":"methods","genre_gemma":"other","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"other","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.003153117,0.06350134,0.8030085,0.0024775725,0.0069157467,0.00022428462,0.00017990796,0.0022005094,0.11833906],"genre_scores_gemma":[0.070114,0.091979176,0.4907499,0.003807328,0.00912842,0.00070178136,0.0008228453,0.001509712,0.33118683],"study_design_codex":"design_other","study_design_gemma":"not_applicable","domain_scores_codex":[0.9996209,0.000072963,0.000019668629,0.000082757426,0.00016188568,0.00004177846],"domain_scores_gemma":[0.9997578,0.00010151113,0.000017581477,0.00003331701,0.00006934701,0.000020397534],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0006313009,0.0013999762,0.0005148678,0.00068202533,0.000387937,0.0018023881,0.0010158559,0.0011764416,0.018118905],"category_scores_gemma":[0.0009057136,0.00052335503,0.0008351233,0.0004890265,0.00068228174,0.0014441272,0.0008286704,0.002288009,0.009255652],"study_design_candidate":"not_applicable","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00012689177,0.00009569565,0.00025653117,0.0018231659,0.000115918476,0.00040270397,0.000550229,0.0140649285,0.043736536,0.25572652,0.18538818,0.4977127],"study_design_scores_gemma":[0.000017449827,0.000118060474,0.0002216154,0.0004472881,0.000039319668,0.00064128375,0.00005925221,0.012946415,0.009126301,0.04533305,0.931015,0.0000349401],"about_ca_topic_score_codex":0.0005354727,"about_ca_topic_score_gemma":0.0008173146,"teacher_disagreement_score":0.018118905,"about_ca_system_score_codex":0.0007788649,"about_ca_system_score_gemma":0.00047441857,"threshold_uncertainty_score":0.06061381},"labels":[],"label_agreement":null},{"id":"W2604733336","doi":"10.1149/ma2007-02/23/1224","title":"The Influence of the Contacts in Charge Transport in Polymer Thin- Film Field-Effect Transistors","year":2007,"lang":"en","type":"article","venue":"ECS Meeting Abstracts","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Simon Fraser University; McMaster University","funders":"","keywords":"Charge (physics); Materials science; Field-effect transistor; Thin-film transistor; Optoelectronics; Transistor; Polymer; Field effect; Engineering physics; Condensed matter physics; Electrical engineering; Nanotechnology; Physics; Engineering; Composite material; Voltage; Particle physics","score_opus":0.007910473270341853,"score_gpt":0.2256016803397287,"score_spread":0.21769120706938683,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2604733336","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9768813,0.00835868,0.0022477729,0.0009644492,0.0004707054,0.000027272115,0.0001780833,0.00009951542,0.010772222],"genre_scores_gemma":[0.9965402,0.0014840744,0.00029380413,0.000044155284,0.00006992523,0.000008331403,0.000048301466,0.000028205559,0.0014829185],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998454,0.000025994712,0.0000062730956,0.000022070559,0.00006125025,0.000038895767],"domain_scores_gemma":[0.99912435,0.0006711376,0.000048839778,0.000033600845,0.000061362596,0.00006071228],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00024135978,0.00023271212,0.0003573215,0.00028797207,0.0007255874,0.0009818802,0.00036316435,0.00069522974,0.0032428578],"category_scores_gemma":[0.0018329053,0.00021460559,0.00022957893,0.00021853921,0.0005734452,0.0009339098,0.00032727278,0.00045781513,0.00044543977],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0022443738,0.00023108495,0.001168937,0.0009042356,0.000085875545,0.002046982,0.00046392236,0.0080340095,0.9519139,0.008981705,0.0024127993,0.021512108],"study_design_scores_gemma":[0.00016261674,0.0013205645,0.009363915,0.00020825991,0.00030019312,0.00072543585,0.0005224105,0.08074742,0.8932436,0.0046134847,0.008725993,0.0000661112],"about_ca_topic_score_codex":0.0014876293,"about_ca_topic_score_gemma":0.0015585456,"teacher_disagreement_score":0.0032428578,"about_ca_system_score_codex":0.0005051861,"about_ca_system_score_gemma":0.0002668707,"threshold_uncertainty_score":0.010848403},"labels":[],"label_agreement":null},{"id":"W2606537829","doi":"10.1149/ma2017-01/45/2056","title":"Developement of Printed OTFTs and Logic Circuits","year":2017,"lang":"en","type":"article","venue":"ECS Meeting Abstracts","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"National Research Council Canada","funders":"","keywords":"Thin-film transistor; Materials science; Printed electronics; Transistor; Inverter; Optoelectronics; Electronic circuit; CMOS; Printed circuit board; Substrate (aquarium); Gate dielectric; Electrical engineering; Layer (electronics); Electronic engineering; Nanotechnology; Voltage; Inkwell; Engineering; Composite material","score_opus":0.03735516888366086,"score_gpt":0.2670787504287909,"score_spread":0.22972358154513006,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2606537829","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.7523978,0.006231938,0.21213305,0.00036994208,0.0005640946,0.00011621432,0.00029967038,0.0011299712,0.026757365],"genre_scores_gemma":[0.88169664,0.0025911941,0.10174354,0.00010366437,0.00007732152,0.000043597796,0.00024105125,0.00007937376,0.013423696],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998173,0.0000099177105,0.00000859281,0.000040966836,0.000100231744,0.000023002569],"domain_scores_gemma":[0.9998574,0.00003769679,0.000026528924,0.00002577687,0.00003568325,0.000016818003],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00012945937,0.00024052132,0.0001547467,0.00026195197,0.00011361759,0.00050612213,0.00038051556,0.00031783103,0.001299878],"category_scores_gemma":[0.00040170958,0.00015388854,0.00025901894,0.0001926374,0.00023793342,0.00044158258,0.00024552114,0.0004330561,0.00048154985],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000016591875,0.000019105439,0.00020936715,0.000099167206,0.000009067854,0.00020367146,0.000037061945,0.00065582385,0.9739924,0.0023217704,0.00013027366,0.022305725],"study_design_scores_gemma":[0.000004490851,0.000086903834,0.00045692566,0.0000062465465,0.000010053731,0.00025278825,0.000008858393,0.0020624325,0.99025613,0.00021450056,0.006635055,0.0000056407935],"about_ca_topic_score_codex":0.00014425491,"about_ca_topic_score_gemma":0.00023334891,"teacher_disagreement_score":0.001299878,"about_ca_system_score_codex":0.00021609977,"about_ca_system_score_gemma":0.00010979959,"threshold_uncertainty_score":0.004348576},"labels":[],"label_agreement":null},{"id":"W2607206199","doi":"10.1149/ma2007-02/23/1221","title":"Compact Model for the Injection and Transport of Charge in Organic Diodes","year":2007,"lang":"en","type":"article","venue":"ECS Meeting Abstracts","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McMaster University","funders":"","keywords":"Charge (physics); Diode; OLED; Materials science; Optoelectronics; Physics; Nanotechnology; Quantum mechanics","score_opus":0.025241983261537756,"score_gpt":0.25268093420101656,"score_spread":0.2274389509394788,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2607206199","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.047006313,0.0049870494,0.858918,0.002029467,0.00064180425,0.00021720685,0.0023128665,0.0009371353,0.08295013],"genre_scores_gemma":[0.82822466,0.004466743,0.04728136,0.0007697901,0.00038623295,0.0008057524,0.0015042472,0.0003944145,0.1161668],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99988246,0.000018799472,0.0000038723083,0.000017213599,0.000055831613,0.000021913489],"domain_scores_gemma":[0.99987924,0.000050052702,0.000011892164,0.000017189643,0.000032032687,0.000009519349],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0002256901,0.00059358735,0.00091534643,0.00055493036,0.0004217737,0.0009484075,0.0018577407,0.0018523196,0.008669779],"category_scores_gemma":[0.00064602256,0.00026570537,0.00085294,0.00069341116,0.00055441784,0.0017966459,0.00043392304,0.0008083127,0.0019267026],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0001574954,0.00008713945,0.0002786438,0.00033967526,0.000058842415,0.0003532293,0.00013878377,0.6948835,0.027795702,0.2579413,0.005744544,0.012221146],"study_design_scores_gemma":[0.000018984734,0.000027857888,0.00009084099,0.000017631604,0.00001401936,0.00006774547,0.000012488451,0.9758336,0.0011613755,0.019065512,0.0036790303,0.000010859077],"about_ca_topic_score_codex":0.0031448817,"about_ca_topic_score_gemma":0.0034408858,"teacher_disagreement_score":0.008669779,"about_ca_system_score_codex":0.0010560649,"about_ca_system_score_gemma":0.00060561753,"threshold_uncertainty_score":0.029003263},"labels":[],"label_agreement":null},{"id":"W2620570827","doi":"10.1587/elex.14.20170448","title":"A hybrid model of III-V FETs with accurate high-order derivatives","year":2017,"lang":"en","type":"article","venue":"IEICE Electronics Express","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Carleton University","funders":"National Natural Science Foundation of China","keywords":"High-electron-mobility transistor; Artificial neural network; Voltage; Electronic engineering; Topology (electrical circuits); Order (exchange); Biological system; Computer science; Transistor; Materials science; Engineering; Electrical engineering; Artificial intelligence; Biology","score_opus":0.018020981678534238,"score_gpt":0.245148472259728,"score_spread":0.22712749058119375,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2620570827","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.04099906,0.0011932638,0.93203133,0.0002931881,0.000100294514,0.000059893853,0.00024897105,0.00047366205,0.024600329],"genre_scores_gemma":[0.9221779,0.0011837863,0.0480325,0.00019860065,0.00006511576,0.00016741501,0.0002392643,0.00015359394,0.027781885],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9998534,0.00002120519,0.0000066177613,0.00003411631,0.000068456735,0.000016142738],"domain_scores_gemma":[0.9998933,0.000038285303,0.000013077187,0.00001659765,0.000032829957,0.000005862513],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00017858639,0.0004914878,0.0004995822,0.00028785516,0.00033758543,0.00071415526,0.0013778075,0.0011610084,0.0014000622],"category_scores_gemma":[0.00040172972,0.0003487467,0.0006560604,0.00036826337,0.0004056923,0.001333652,0.00032377956,0.0007688284,0.00055865326],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000035411966,0.000022599168,0.00034673561,0.00007127973,0.000028178976,0.00017504944,0.000073836774,0.9518837,0.022815097,0.017176278,0.0005618272,0.006810101],"study_design_scores_gemma":[0.0000019343006,0.000009074557,0.000082088074,0.0000033435715,0.000004110154,0.00003532292,0.0000031818106,0.9967685,0.00084871514,0.0014551181,0.0007846858,0.000003941524],"about_ca_topic_score_codex":0.005073101,"about_ca_topic_score_gemma":0.005702437,"teacher_disagreement_score":0.005073101,"about_ca_system_score_codex":0.00093093235,"about_ca_system_score_gemma":0.00053208624,"threshold_uncertainty_score":0.010087132},"labels":[],"label_agreement":null},{"id":"W2727056390","doi":"10.1149/ma2017-02/26/1143","title":"The Impact of Tunnel FET on Heavy Ion Induced Transient Effect","year":2017,"lang":"en","type":"article","venue":"ECS Meeting Abstracts","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":6,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":true,"ca_institutions":"","funders":"","keywords":"Impact ionization; Optoelectronics; MOSFET; Transient (computer programming); Transistor; Silicon on insulator; Materials science; Drain-induced barrier lowering; CMOS; Electron; Channel length modulation; Ionization; Voltage; Field-effect transistor; Ion; Electrical engineering; Silicon; Physics; Computer science; Engineering","score_opus":0.02516091813391527,"score_gpt":0.28781354081621585,"score_spread":0.2626526226823006,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2727056390","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9927481,0.0005282553,0.0046602297,0.000062006075,0.000056112243,0.000008415195,0.00009977099,0.00022749051,0.0016097178],"genre_scores_gemma":[0.9988707,0.00009866356,0.0005269823,0.000010820855,0.0000032974121,0.000002711741,0.000028807386,0.00000883919,0.00044913843],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99995136,0.000004186817,0.0000019035677,0.000009889288,0.0000159079,0.00001684811],"domain_scores_gemma":[0.99988604,0.000046308098,0.000018949444,0.000010352491,0.00002701635,0.000011233503],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00007979801,0.00013746129,0.00018569364,0.00011816356,0.0001403113,0.00018090905,0.0002968552,0.000282723,0.0012578233],"category_scores_gemma":[0.00028323993,0.000056301298,0.00018738692,0.0001357444,0.00013831303,0.0003417269,0.00012226375,0.000101182224,0.00010845255],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0004413589,0.0000531859,0.0041499296,0.00025796582,0.000035511614,0.0008706729,0.000111500034,0.019118808,0.9623655,0.0011878408,0.00053507206,0.010872722],"study_design_scores_gemma":[0.000037325288,0.0014527491,0.0099853985,0.00003441086,0.000071479335,0.0006643265,0.00015327452,0.19901454,0.7855077,0.00057440414,0.002477756,0.00002662986],"about_ca_topic_score_codex":0.00053881126,"about_ca_topic_score_gemma":0.0005620375,"teacher_disagreement_score":0.0012578233,"about_ca_system_score_codex":0.00026527708,"about_ca_system_score_gemma":0.00009822043,"threshold_uncertainty_score":0.004207909},"labels":[],"label_agreement":null},{"id":"W2739956889","doi":"10.5596/c17-014","title":"RxTx and Micromedex","year":2017,"lang":"fr","type":"article","venue":"Journal of the Canadian Health Libraries Association / Journal de l Association de bilbiothèques de la santé du Canada","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":true,"route_about_ca":false,"ca_institutions":"Western University","funders":"","keywords":"Medicine; Computational biology; Biology","score_opus":0.006290837699703549,"score_gpt":0.24114011284616854,"score_spread":0.234849275146465,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2739956889","genre_codex":"other","genre_gemma":"other","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"other","genre_consensus":"other","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.008571662,0.006819963,0.14623886,0.0040685697,0.00841128,0.00071700447,0.06309089,0.2625416,0.4995401],"genre_scores_gemma":[0.07919264,0.006047754,0.13927743,0.004108023,0.0013696193,0.0026782148,0.08946154,0.036261138,0.64160365],"study_design_codex":"not_applicable","study_design_gemma":"not_applicable","domain_scores_codex":[0.99822015,0.0001708192,0.00009412781,0.00027980984,0.0010823805,0.0001526523],"domain_scores_gemma":[0.998792,0.00022719511,0.000073633855,0.00040632245,0.00037404275,0.00012691996],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0019288844,0.0012215595,0.0014491355,0.0021008723,0.0010341682,0.0032434543,0.0030682757,0.0019459992,0.21203619],"category_scores_gemma":[0.0038347945,0.0009289915,0.00094004546,0.0013480836,0.0006410928,0.0022895706,0.0014706587,0.0033574286,0.094190896],"study_design_candidate":"not_applicable","study_design_consensus":"not_applicable","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0003880406,0.000073851064,0.0005957589,0.0004838062,0.000067219335,0.00012841489,0.00008823411,0.0022089833,0.012477805,0.035475034,0.7988161,0.14919682],"study_design_scores_gemma":[0.00018976432,0.000094891155,0.0004964171,0.000087131186,0.0000421693,0.00017979174,0.000029071618,0.011710848,0.022007478,0.005843503,0.95924795,0.00007101017],"about_ca_topic_score_codex":0.0029004924,"about_ca_topic_score_gemma":0.0044028545,"teacher_disagreement_score":0.21203619,"about_ca_system_score_codex":0.0017784433,"about_ca_system_score_gemma":0.002977301,"threshold_uncertainty_score":0.70933175},"labels":[],"label_agreement":null},{"id":"W2743565720","doi":"10.1109/jssc.2017.2731178","title":"Introduction to the Special Section on the 2016 IEEE BCTM and IEEE CSICS","year":2017,"lang":"en","type":"article","venue":"IEEE Journal of Solid-State Circuits","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Toronto","funders":"Technische Universiteit Delft","keywords":"BiCMOS; Electronic circuit; Integrated circuit; Special section; Section (typography); Cover (algebra); Electronic engineering; Computer science; Electrical engineering; Engineering; Transistor; Engineering physics","score_opus":0.02630394206494914,"score_gpt":0.2634636604257243,"score_spread":0.23715971836077515,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2743565720","genre_codex":"editorial","genre_gemma":"editorial","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"editorial","genre_consensus":"editorial","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.0013307623,0.046431568,0.008717271,0.032070845,0.68123305,0.00024634873,0.0012886835,0.0011424373,0.22753896],"genre_scores_gemma":[0.0065731267,0.051145703,0.0032386957,0.01672077,0.40391743,0.0002423956,0.002291545,0.00089814217,0.51497215],"study_design_codex":"not_applicable","study_design_gemma":"not_applicable","domain_scores_codex":[0.99880373,0.00011722832,0.00012460814,0.000184239,0.00062165014,0.00014854479],"domain_scores_gemma":[0.9953471,0.0007646965,0.00041585343,0.00024830893,0.002309516,0.0009145039],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0010320314,0.0014781901,0.001027939,0.0037737943,0.0012342187,0.0029636712,0.001070894,0.0021912083,0.10865318],"category_scores_gemma":[0.004613656,0.00038351474,0.00058026175,0.0026215669,0.00090478285,0.002519289,0.0016620931,0.003058199,0.0859514],"study_design_candidate":"not_applicable","study_design_consensus":"not_applicable","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000020624257,0.000023045657,0.00009268333,0.00014686865,0.0000028053357,0.00003693318,0.000010878972,0.00009104067,0.0006128527,0.0016249383,0.9451362,0.052201096],"study_design_scores_gemma":[0.000002253255,0.000021337999,0.00027998895,0.0001122376,0.0000022968813,0.000118224874,0.000012304766,0.00010650721,0.0001563424,0.000680775,0.99850106,0.000006676887],"about_ca_topic_score_codex":0.0013803199,"about_ca_topic_score_gemma":0.003790548,"teacher_disagreement_score":0.10865318,"about_ca_system_score_codex":0.0013478087,"about_ca_system_score_gemma":0.002007138,"threshold_uncertainty_score":0.3634811},"labels":[],"label_agreement":null},{"id":"W2755580489","doi":"10.7567/jjap.56.105503","title":"Formation technology of flat surface with epitaxial growth on ion-implanted (100)-oriented Si surface of thin silicon-on-insulator","year":2017,"lang":"en","type":"article","venue":"Japanese Journal of Applied Physics","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Hatch (Canada)","funders":"","keywords":"Epitaxy; Silicon; Materials science; Silicon on insulator; Surface (topology); Ion; Optoelectronics; Ion implantation; Thin film; Nanotechnology; Chemistry; Geometry; Mathematics; Layer (electronics)","score_opus":0.012993166070015712,"score_gpt":0.23141551191982418,"score_spread":0.21842234584980846,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2755580489","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9736683,0.000811474,0.018736707,0.00012381356,0.00013115686,0.00007907837,0.00036860743,0.00031096404,0.005769995],"genre_scores_gemma":[0.975878,0.00046749087,0.019635724,0.000047012487,0.000021976262,0.000056701392,0.00046227008,0.000038482904,0.0033923448],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999149,0.0000035322655,0.0000041081503,0.00001948082,0.000035525543,0.000022491633],"domain_scores_gemma":[0.9999304,0.0000066275616,0.0000115607345,0.0000119811575,0.000020694695,0.00001872338],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000076471086,0.00033681485,0.00024853915,0.00026122868,0.0002545915,0.00022739627,0.00048675598,0.0002765328,0.0006756435],"category_scores_gemma":[0.00011270513,0.00031709374,0.00038285027,0.00012576192,0.00013543475,0.00021039581,0.0002986877,0.00029472634,0.00027134057],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000016970882,0.0000069057796,0.00029816412,0.00004629272,0.000006095067,0.000113027105,0.000029249792,0.00016976378,0.99774253,0.0001972497,0.000121923775,0.0012518252],"study_design_scores_gemma":[0.000018004508,0.00019143424,0.005003741,0.000004998146,0.00002203715,0.00030254552,0.000051836447,0.0050884862,0.9869494,0.00008933382,0.002266417,0.000011753953],"about_ca_topic_score_codex":0.00096743193,"about_ca_topic_score_gemma":0.0013882053,"teacher_disagreement_score":0.00096743193,"about_ca_system_score_codex":0.00023429593,"about_ca_system_score_gemma":0.0003373335,"threshold_uncertainty_score":0.0022602677},"labels":[],"label_agreement":null},{"id":"W2766368205","doi":"10.1145/3125502.3125547","title":"Heterogeneous redundancy to address performance and cost in multi-core SIMT","year":2017,"lang":"en","type":"article","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McGill University","funders":"","keywords":"Redundancy (engineering); Computer science; Yield (engineering); Core (optical fiber); Multi-core processor; Parallel computing; Telecommunications; Materials science; Operating system","score_opus":0.07338783389013116,"score_gpt":0.3064905875822849,"score_spread":0.23310275369215377,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2766368205","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.3272034,0.0040588723,0.61930066,0.0011759462,0.00048968586,0.00023950839,0.00036025554,0.003784142,0.043387447],"genre_scores_gemma":[0.9084909,0.00027771885,0.08550577,0.0003244649,0.00013197376,0.00006146288,0.0001876604,0.00019802786,0.004821949],"study_design_codex":"design_other","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99963355,0.00006271937,0.000016712847,0.00006793478,0.00013872843,0.00008034747],"domain_scores_gemma":[0.99916613,0.00017600159,0.000096276424,0.00025868585,0.00025620614,0.00004672085],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00059977995,0.00068855326,0.00043078247,0.0007120442,0.0005784023,0.00060574943,0.0017691171,0.00039124448,0.004747103],"category_scores_gemma":[0.001459043,0.00016162562,0.00026613384,0.0006516873,0.00039115237,0.0016862714,0.0009035789,0.0005446349,0.00072352553],"study_design_candidate":"simulation_or_modeling","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.001095147,0.00047911503,0.0041913167,0.00074241334,0.00020838987,0.0007083759,0.00036623754,0.2590894,0.18650533,0.106321685,0.022932094,0.41736054],"study_design_scores_gemma":[0.000096888834,0.0015377521,0.0017264711,0.00009692941,0.0001913433,0.0008789151,0.00018683812,0.8298574,0.09367583,0.043418285,0.028285215,0.000048067446],"about_ca_topic_score_codex":0.0005504618,"about_ca_topic_score_gemma":0.0023710704,"teacher_disagreement_score":0.004747103,"about_ca_system_score_codex":0.00062969374,"about_ca_system_score_gemma":0.0006228087,"threshold_uncertainty_score":0.015880585},"labels":[],"label_agreement":null},{"id":"W2767849965","doi":"10.1109/ted.2017.2766782","title":"Channel Material Dependence of Wave Function Deformation Scattering in Ultrascaled FinFETs","year":2017,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Alberta","funders":"Natural Sciences and Engineering Research Council of Canada; Alberta Innovates - Technology Futures; International Business Machines Corporation","keywords":"Scattering; Channel (broadcasting); Coupling (piping); Materials science; Deformation (meteorology); Effective mass (spring–mass system); Surface finish; Enhanced Data Rates for GSM Evolution; Condensed matter physics; Function (biology); Mechanics; Physics; Optics; Composite material; Classical mechanics; Telecommunications","score_opus":0.018823751525771017,"score_gpt":0.23864996405327854,"score_spread":0.21982621252750753,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2767849965","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99844474,0.000052048934,0.00074443937,0.000023745235,0.0000052574374,0.0000029904427,0.000032834552,0.000025834886,0.00066818326],"genre_scores_gemma":[0.9994803,0.000027265565,0.00034187824,0.0000068859367,0.0000016584761,0.00000385811,0.000023689752,0.0000066467846,0.00010785818],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99992085,0.000008190817,0.0000037895254,0.000014285857,0.000022363629,0.000030418505],"domain_scores_gemma":[0.999701,0.00012029118,0.00007780615,0.0000296727,0.000043537668,0.00002773264],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00020248997,0.00025144772,0.0002842319,0.00029234143,0.00037182026,0.00041674348,0.00042585435,0.00033682305,0.00071626244],"category_scores_gemma":[0.0005920536,0.00019076205,0.00026877507,0.00030871574,0.000490008,0.00045285124,0.00020644156,0.00020747438,0.000055741966],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00041439704,0.00029149052,0.013535352,0.00012466044,0.00012943192,0.0006637936,0.0002160026,0.798002,0.17705831,0.0037148865,0.00044980273,0.0053998367],"study_design_scores_gemma":[0.000022703036,0.00022952903,0.0077127367,0.000010026592,0.00002999108,0.00004971949,0.00007951989,0.9574622,0.0336307,0.0005492815,0.00019463943,0.00002885727],"about_ca_topic_score_codex":0.0056168,"about_ca_topic_score_gemma":0.0064999196,"teacher_disagreement_score":0.0056168,"about_ca_system_score_codex":0.0009993841,"about_ca_system_score_gemma":0.0004631399,"threshold_uncertainty_score":0.0111682415},"labels":[],"label_agreement":null},{"id":"W2771066104","doi":"10.1109/nano.2017.8117259","title":"Improving the immunity of SET/MOS hybrid A/D converters using Boltzmann machine networks","year":2017,"lang":"en","type":"article","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Windsor","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Converters; Boltzmann machine; Computer science; Transistor; Electronic engineering; Set (abstract data type); Simulated annealing; Process (computing); Electrical engineering; Voltage; Engineering; Algorithm; Artificial intelligence; Artificial neural network","score_opus":0.029500301659799853,"score_gpt":0.25262414281411805,"score_spread":0.2231238411543182,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2771066104","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.4406402,0.00050547475,0.550386,0.00021834623,0.000060598017,0.000044049983,0.000035171724,0.0007196649,0.0073905042],"genre_scores_gemma":[0.9747335,0.000067144596,0.02401697,0.00003970878,0.000007643079,0.000019121617,0.000009913061,0.000012676616,0.001093291],"study_design_codex":"simulation_or_modeling","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998877,0.000028226368,0.000006670702,0.000021180693,0.00003961938,0.00001662406],"domain_scores_gemma":[0.9997538,0.00013370936,0.000024883413,0.000028033472,0.000045337612,0.000014327932],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00022300392,0.00025814766,0.00029503473,0.00020529091,0.00027767575,0.000429269,0.0006448781,0.0004007994,0.0015026726],"category_scores_gemma":[0.00068266975,0.00015628622,0.00024127097,0.00018405815,0.00029473897,0.00070976303,0.00036881721,0.0004113194,0.00016797966],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00038304544,0.00017234102,0.0021986815,0.00014137207,0.000128504,0.00013212673,0.0001432978,0.65086293,0.22326648,0.02846909,0.00084992807,0.09325223],"study_design_scores_gemma":[0.000007709768,0.00006657784,0.00018869343,0.0000042860684,0.000013354177,0.000026374884,0.00000661819,0.97436315,0.021613441,0.0031816582,0.0005212567,0.0000068427585],"about_ca_topic_score_codex":0.00062905764,"about_ca_topic_score_gemma":0.000968052,"teacher_disagreement_score":0.0015026726,"about_ca_system_score_codex":0.0003626039,"about_ca_system_score_gemma":0.00019090944,"threshold_uncertainty_score":0.0050269365},"labels":[],"label_agreement":null},{"id":"W2774935444","doi":"10.1021/acs.nanolett.7b03620","title":"Mapping the Coulomb Environment in Interference-Quenched Ballistic Nanowires","year":2017,"lang":"en","type":"article","venue":"Nano Letters","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":2,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Toronto","funders":"Networks of Centres of Excellence of Canada; Natural Sciences and Engineering Research Council of Canada; Defence Research and Development Canada; Ontario Centres of Excellence","keywords":"Nanowire; Condensed matter physics; Coulomb; Conductance; Scattering; Materials science; Semiconductor; Electron; Nanotechnology; Physics; Optoelectronics; Optics; Quantum mechanics","score_opus":0.03551799496401701,"score_gpt":0.23292959569674626,"score_spread":0.19741160073272926,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2774935444","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9947635,0.000040874867,0.0041418327,0.000012903743,0.000002669553,0.0000042376273,0.000034797835,0.0000407948,0.00095825794],"genre_scores_gemma":[0.9987709,0.000020919564,0.0010199146,0.00000718927,0.0000012495174,0.0000037036743,0.00002312418,0.0000055292785,0.00014754428],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998779,0.000014150278,0.000003915841,0.000025236977,0.000047474376,0.000031320287],"domain_scores_gemma":[0.99983406,0.000053482043,0.00003765671,0.000018018243,0.000030703894,0.000025990377],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00011471821,0.00009869927,0.00013758652,0.00023199411,0.00023487456,0.00041052926,0.00031959548,0.00019775194,0.00045490853],"category_scores_gemma":[0.00042155944,0.00014975228,0.00008487391,0.00016451046,0.0004250256,0.00021043414,0.00024645857,0.00018016485,0.000094542724],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00014740905,0.000057041005,0.0038834338,0.000023949027,0.000012475564,0.0002662262,0.0001435353,0.009197019,0.97976637,0.003755335,0.00011675281,0.0026304645],"study_design_scores_gemma":[0.000046293593,0.00043094426,0.027204638,0.000013284604,0.000021989592,0.0005597459,0.0003761689,0.21977101,0.7462675,0.003938319,0.0013211201,0.000049020677],"about_ca_topic_score_codex":0.0010987594,"about_ca_topic_score_gemma":0.0017123023,"teacher_disagreement_score":0.0010987594,"about_ca_system_score_codex":0.00053464854,"about_ca_system_score_gemma":0.00019452006,"threshold_uncertainty_score":0.0038791895},"labels":[],"label_agreement":null},{"id":"W2791257689","doi":"10.1109/ted.2018.2807409","title":"Variability Study for Low-Voltage Microelectromechanical Relay Operation","year":2018,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":7,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"National Science Foundation","keywords":"Relay; Voltage; Solid-state relay; Electrical engineering; Digital protective relay; Materials science; Microelectromechanical systems; Dropout voltage; Power (physics); Electronic engineering; Voltage regulator; Engineering; Protective relay; Optoelectronics; Physics","score_opus":0.013682032259977998,"score_gpt":0.2651499676928235,"score_spread":0.2514679354328455,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2791257689","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.97021234,0.00088399794,0.025213573,0.00011311526,0.000029482562,0.000025438594,0.00031133305,0.0001290722,0.0030817036],"genre_scores_gemma":[0.9984888,0.00013679855,0.0009398127,0.000013012324,0.0000135619775,0.000010879059,0.00008994547,0.000018882023,0.0002882419],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9997043,0.000024903262,0.000012781173,0.000079746846,0.00014411246,0.000034159242],"domain_scores_gemma":[0.999164,0.00041662983,0.00013401372,0.000095831674,0.00016308934,0.000026539059],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00029169137,0.00019865624,0.00024833734,0.00028610625,0.00019483636,0.00036128063,0.0004346883,0.0002808944,0.00085584034],"category_scores_gemma":[0.0010951948,0.00009235453,0.00023521297,0.00028656324,0.0001892096,0.0003267534,0.00019050304,0.00044159943,0.0001687113],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00020232356,0.000075873795,0.00498284,0.0001355404,0.0000422903,0.00049392343,0.00020828922,0.013056192,0.9654929,0.0019853872,0.0004435366,0.012880955],"study_design_scores_gemma":[0.00001569537,0.00054162514,0.018410143,0.000021451964,0.000049994556,0.000847087,0.00013201189,0.266719,0.70903087,0.0013153987,0.0028688577,0.000047881847],"about_ca_topic_score_codex":0.0005940178,"about_ca_topic_score_gemma":0.00046298982,"teacher_disagreement_score":0.00085584034,"about_ca_system_score_codex":0.0002877901,"about_ca_system_score_gemma":0.00014356537,"threshold_uncertainty_score":0.0028630495},"labels":[],"label_agreement":null},{"id":"W2794220862","doi":"","title":"Utilisation d'impulsions courtes pour Driver de grille communicant sous un fort dv/dt","year":2018,"lang":"fr","type":"preprint","venue":"HAL (Le Centre pour la Communication Scientifique Directe)","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Safran Electronics (Canada)","funders":"","keywords":"Physics; Humanities; Electrical engineering; Art; Engineering","score_opus":0.01753281865125511,"score_gpt":0.23368632484723273,"score_spread":0.21615350619597762,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2794220862","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.75822514,0.0010638965,0.20032376,0.00055077986,0.00080617046,0.00018174913,0.00044209522,0.010648923,0.02775749],"genre_scores_gemma":[0.9442518,0.00023151658,0.022879936,0.00014202986,0.00006431289,0.000052890686,0.0002867427,0.00050990144,0.031580906],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9989685,0.00013929402,0.000040425606,0.0002539522,0.0004593556,0.00013860653],"domain_scores_gemma":[0.9968947,0.0010205236,0.00016735634,0.0003214181,0.0013294278,0.00026652825],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0007003626,0.0009856921,0.0005623196,0.0010651387,0.00084476755,0.0015793008,0.0010069516,0.0014608693,0.020352175],"category_scores_gemma":[0.002889313,0.00044838057,0.0003893011,0.00040861784,0.00043756812,0.0013140116,0.00082469196,0.0006825696,0.0049558263],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.003904609,0.0005792591,0.00883004,0.0005030905,0.0001471639,0.0014570921,0.0026026755,0.007717005,0.6516057,0.0037543527,0.0054255947,0.31347328],"study_design_scores_gemma":[0.000226065,0.0046294807,0.02062471,0.00022094703,0.00034395535,0.0023396504,0.0021869189,0.09869448,0.80118406,0.0016802578,0.06759785,0.00027162698],"about_ca_topic_score_codex":0.0043440005,"about_ca_topic_score_gemma":0.0038292205,"teacher_disagreement_score":0.020352175,"about_ca_system_score_codex":0.00043567605,"about_ca_system_score_gemma":0.00047405827,"threshold_uncertainty_score":0.068084836},"labels":[],"label_agreement":null},{"id":"W2794472681","doi":"10.1109/kbei.2017.8324909","title":"A novel approach for offset canceling in a high-speed four-quadrant MTL multiplier","year":2017,"lang":"en","type":"article","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":7,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"","funders":"Iran University of Science and Technology; University of Alberta","keywords":"CMOS; Offset (computer science); Total harmonic distortion; Electronic engineering; Multiplier (economics); Computer science; Topology (electrical circuits); Voltage; Analog multiplier; Electrical engineering; Engineering; Analog signal","score_opus":0.06140296999031893,"score_gpt":0.27092229244634736,"score_spread":0.20951932245602842,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2794472681","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.140645,0.0013893262,0.8304153,0.0006708678,0.00038217605,0.00021768882,0.000156289,0.0030036175,0.023119774],"genre_scores_gemma":[0.7540901,0.00030048724,0.23519097,0.0002580696,0.00014202543,0.000084914805,0.00008528854,0.00007769774,0.009770461],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99986815,0.000018226305,0.000008935494,0.000034826324,0.000053448177,0.00001643749],"domain_scores_gemma":[0.99988556,0.000013003576,0.000024975188,0.000024313671,0.000040927967,0.000011169882],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00014290173,0.00031920391,0.00020441119,0.00043447784,0.00048530241,0.00049949053,0.00088303664,0.00035266785,0.003022847],"category_scores_gemma":[0.0002241356,0.00020744077,0.00021163176,0.00030332804,0.00023216936,0.0006502966,0.0003758051,0.000317137,0.0007140781],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0002824215,0.000055398814,0.0007240927,0.00023701465,0.00003422765,0.00045916263,0.00018521637,0.0030994085,0.82633334,0.013179347,0.0013687686,0.15404168],"study_design_scores_gemma":[0.00017705344,0.0020584515,0.0022287518,0.0000908739,0.00013008784,0.0055830153,0.0001366825,0.113667235,0.78088486,0.009266999,0.08566799,0.000108007574],"about_ca_topic_score_codex":0.00016548905,"about_ca_topic_score_gemma":0.0004196097,"teacher_disagreement_score":0.003022847,"about_ca_system_score_codex":0.00031494198,"about_ca_system_score_gemma":0.00027299713,"threshold_uncertainty_score":0.010112464},"labels":[],"label_agreement":null},{"id":"W2886643517","doi":"10.1002/mop.31334","title":"Prediction of<scp>RF</scp>performances of advanced<scp>MOS</scp>transistors from<scp>DC</scp>and low frequency measurements","year":2018,"lang":"en","type":"article","venue":"Microwave and Optical Technology Letters","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":2,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Ottawa","funders":"","keywords":"Cutoff frequency; Figure of merit; Radio frequency; Oscillation (cell signaling); Capacitance; Transistor; MOSFET; Cutoff; Electrical engineering; Optoelectronics; Materials science; Electronic engineering; Physics; Engineering; Voltage; Chemistry; Electrode","score_opus":0.017151630436436253,"score_gpt":0.2080125985368592,"score_spread":0.19086096810042294,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2886643517","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.87780213,0.0007012929,0.11295439,0.00017324412,0.000035686055,0.00003624478,0.0008964563,0.0018453203,0.0055552144],"genre_scores_gemma":[0.9950206,0.00009784363,0.004369887,0.0000063045095,0.000006482713,0.000014221936,0.000109732144,0.000030424299,0.0003444625],"study_design_codex":"bench_or_experimental","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9998852,0.000016905627,0.0000042754477,0.000033567834,0.00004794669,0.000012045299],"domain_scores_gemma":[0.9994906,0.00032259178,0.000053876214,0.000052140287,0.00006581954,0.0000150005435],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0002725979,0.00056788424,0.00024561572,0.0005967256,0.00012201683,0.00026910813,0.00028784692,0.00050672627,0.0011518185],"category_scores_gemma":[0.0010769853,0.00017166727,0.00018857185,0.00026955805,0.00022364463,0.0003858318,0.00013949195,0.00024497186,0.00074548705],"study_design_candidate":"simulation_or_modeling","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00035107348,0.00005081911,0.01798197,0.0003241738,0.00008080259,0.00043370604,0.000123647,0.074290015,0.8372075,0.001113065,0.0012789747,0.06676423],"study_design_scores_gemma":[0.000017257207,0.00028816293,0.03144692,0.000035393623,0.00005228185,0.00034533607,0.00003855088,0.6620149,0.3029508,0.0008481089,0.0019283384,0.000033888948],"about_ca_topic_score_codex":0.0007620916,"about_ca_topic_score_gemma":0.0011625383,"teacher_disagreement_score":0.0011518185,"about_ca_system_score_codex":0.00025879825,"about_ca_system_score_gemma":0.00012008344,"threshold_uncertainty_score":0.0038532615},"labels":[],"label_agreement":null},{"id":"W2903863887","doi":"10.1109/icsict.2018.8564902","title":"Recent Advancement in High-Frequency Noise Characterization for Nano-Scale FETs","year":2018,"lang":"en","type":"article","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McMaster University","funders":"","keywords":"Noise (video); Electronic engineering; Subthreshold conduction; Flicker noise; Characterization (materials science); Transistor; Computer science; Noise measurement; Wafer; Noise figure; Electrical engineering; Materials science; Engineering; Noise reduction; Nanotechnology; Voltage; CMOS; Artificial intelligence","score_opus":0.015616817143410967,"score_gpt":0.2432294000507453,"score_spread":0.22761258290733435,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2903863887","genre_codex":"methods","genre_gemma":"review","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"review","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.36602795,0.068208404,0.5487738,0.0012085406,0.00032471423,0.00012666671,0.00050957844,0.00095900206,0.013861372],"genre_scores_gemma":[0.7530886,0.027305301,0.21216975,0.00056417304,0.00047825344,0.00009248158,0.0007327755,0.00021760704,0.0053511574],"study_design_codex":"bench_or_experimental","study_design_gemma":"not_applicable","domain_scores_codex":[0.9995074,0.00007969678,0.000035155335,0.00015712614,0.00019603378,0.000024629931],"domain_scores_gemma":[0.99808097,0.0008701012,0.00012366284,0.0001588359,0.00072872103,0.00003770975],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00096079306,0.00033286502,0.000370792,0.00073256023,0.00020901818,0.0005024816,0.000507827,0.00046812097,0.0010895629],"category_scores_gemma":[0.0013227591,0.00015703011,0.00026895144,0.0005670565,0.0003017362,0.0009876263,0.0003217852,0.00031077815,0.00043414003],"study_design_candidate":"not_applicable","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00020929682,0.00006969861,0.0065540574,0.0015188308,0.00007246879,0.00015578099,0.0002591296,0.0050288513,0.68863815,0.003982112,0.0011086921,0.29240286],"study_design_scores_gemma":[0.000023460192,0.00084347464,0.028320784,0.00029785614,0.00021883358,0.0029323061,0.00038532657,0.059227355,0.79396015,0.0030636168,0.11058815,0.00013874283],"about_ca_topic_score_codex":0.00038480732,"about_ca_topic_score_gemma":0.000761316,"teacher_disagreement_score":0.0010895629,"about_ca_system_score_codex":0.00036249362,"about_ca_system_score_gemma":0.00021637524,"threshold_uncertainty_score":0.0050812364},"labels":[],"label_agreement":null},{"id":"W2905137527","doi":"10.1109/icsict.2018.8564809","title":"Impact of Process Imperfection of CNFET on Circuit-level Performance and Proposal to Improve Using Approximate Circuits","year":2018,"lang":"en","type":"article","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Adder; Carbon nanotube field-effect transistor; Electronic circuit; Computer science; Transistor; Process (computing); Electronic engineering; Logic gate; Field-effect transistor; Electrical engineering; Voltage; Algorithm; Engineering; CMOS","score_opus":0.03543368636071456,"score_gpt":0.29286284286453335,"score_spread":0.2574291565038188,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2905137527","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.62712455,0.009595658,0.34284592,0.0013861294,0.0003348374,0.00013781464,0.0003642186,0.002877937,0.015332915],"genre_scores_gemma":[0.9506578,0.0015671251,0.045742508,0.00011740063,0.000047744023,0.000029422094,0.00013188596,0.000070589835,0.0016355425],"study_design_codex":"bench_or_experimental","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99932885,0.0000928913,0.00004056085,0.000111336645,0.0003285161,0.00009783358],"domain_scores_gemma":[0.9990036,0.0002806208,0.00017796307,0.00022302209,0.00028217703,0.00003273443],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00061284157,0.0005765483,0.00037608627,0.00036988678,0.00030113096,0.00086879847,0.0013734722,0.00068570237,0.0014305081],"category_scores_gemma":[0.0023226717,0.0001827954,0.00030719666,0.00049686927,0.00035365362,0.0016195809,0.00047843068,0.00042422552,0.00033201437],"study_design_candidate":"simulation_or_modeling","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00069550483,0.00017263056,0.009142369,0.001045255,0.0001910083,0.000966831,0.00030266593,0.21453352,0.56977826,0.029275566,0.0027433007,0.17115307],"study_design_scores_gemma":[0.000027680646,0.001388025,0.0051183477,0.000110167406,0.00024604364,0.0011631771,0.00012722053,0.49776638,0.47454843,0.00639093,0.013050983,0.0000626655],"about_ca_topic_score_codex":0.00087992306,"about_ca_topic_score_gemma":0.0011633415,"teacher_disagreement_score":0.0014305081,"about_ca_system_score_codex":0.0007696834,"about_ca_system_score_gemma":0.00053231476,"threshold_uncertainty_score":0.005584538},"labels":[],"label_agreement":null},{"id":"W2905247075","doi":"10.1109/tvlsi.2018.2883710","title":"EA-Based LDE-Aware Fast Analog Layout Retargeting With Device Abstraction","year":2018,"lang":"en","type":"article","venue":"IEEE Transactions on Very Large Scale Integration (VLSI) Systems","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":20,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Memorial University of Newfoundland","funders":"Natural Sciences and Engineering Research Council of Canada; Memorial University of Newfoundland; Canada Foundation for Innovation","keywords":"Computer science; Retargeting; Abstraction; Transistor; Integrated circuit layout; Physical design; Electronic engineering; Analogue electronics; Electronic circuit; Standard cell; Circuit extraction; Integrated circuit; Circuit design; Embedded system; Voltage; Engineering; Electrical engineering; Artificial intelligence; Equivalent circuit","score_opus":0.015578315665680069,"score_gpt":0.23573671463725088,"score_spread":0.2201583989715708,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2905247075","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.08529423,0.0003601264,0.9086448,0.00006345546,0.000036561618,0.00006251912,0.000049303875,0.0020241565,0.0034648762],"genre_scores_gemma":[0.67672354,0.00013746484,0.31954312,0.00009707936,0.000014967409,0.00008307859,0.00012683168,0.00023504558,0.003038815],"study_design_codex":"simulation_or_modeling","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998004,0.0000354977,0.000010078354,0.000046781908,0.000071389084,0.000035797988],"domain_scores_gemma":[0.9997023,0.000093969764,0.000045204117,0.00010150636,0.00004633678,0.000010664424],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00020376124,0.00061834883,0.0003683364,0.00042214192,0.00021319225,0.00032920166,0.0007746104,0.00030961118,0.0014119678],"category_scores_gemma":[0.0006324668,0.00017628382,0.00043608033,0.00033074565,0.0002630637,0.0004529365,0.0006022436,0.00041831666,0.00021990808],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00010282602,0.00009214989,0.0012357389,0.00017674337,0.000077656616,0.00023703353,0.00015323547,0.44183534,0.322169,0.0061075636,0.0010036561,0.2268091],"study_design_scores_gemma":[0.000026064776,0.00019865674,0.000815839,0.000009027551,0.00005493849,0.00022547494,0.000029120292,0.9137614,0.07662529,0.0033090261,0.00492772,0.000017487335],"about_ca_topic_score_codex":0.0007186216,"about_ca_topic_score_gemma":0.0013267178,"teacher_disagreement_score":0.0014119678,"about_ca_system_score_codex":0.0003107876,"about_ca_system_score_gemma":0.00035422828,"threshold_uncertainty_score":0.004723549},"labels":[],"label_agreement":null},{"id":"W2908083585","doi":"10.1109/ifetc.2018.8583889","title":"Generic Parameter Extraction of Inkjet-Printed OTFTs via Optimisation Using LTspice and MATLAB","year":2018,"lang":"en","type":"article","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"National Research Council Canada","funders":"National Research Council Canada","keywords":"Extraction (chemistry); MATLAB; Threshold voltage; Transistor; Computer science; Thin-film transistor; Voltage; Electronic engineering; Spice; MOSFET; Electronic circuit simulation; Biasing; Electronic circuit; Materials science; Electrical engineering; Engineering; Nanotechnology","score_opus":0.03947633323941237,"score_gpt":0.27753571831986357,"score_spread":0.2380593850804512,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2908083585","genre_codex":"methods","genre_gemma":"methods","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"methods","genre_consensus":"methods","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.040661756,0.00035638406,0.9024588,0.00012968859,0.0000799836,0.00020899114,0.0036290954,0.03667886,0.015796501],"genre_scores_gemma":[0.3771338,0.00071384374,0.5914416,0.0001092114,0.000024922649,0.0011436066,0.0046425187,0.009170735,0.015619835],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9997255,0.000029412367,0.00002468568,0.000044702123,0.00014360694,0.000032083004],"domain_scores_gemma":[0.9992617,0.0003621338,0.00007084717,0.00012279373,0.00016641046,0.000016098418],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00067235925,0.0012666942,0.0006746179,0.00081484095,0.0003202024,0.0008596621,0.001350713,0.0006484131,0.019173766],"category_scores_gemma":[0.0021752093,0.00048691564,0.0008927185,0.0005865652,0.00020135462,0.0006655996,0.00053193135,0.00096347067,0.0050329394],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00035014452,0.0001965707,0.0031630995,0.0023662657,0.00026288306,0.00085641886,0.00049490406,0.5765179,0.168589,0.014292323,0.0201743,0.21273617],"study_design_scores_gemma":[0.0000395202,0.00010586336,0.0008557985,0.000091249996,0.000049450595,0.0003338273,0.000049171165,0.8362815,0.12584461,0.0042684223,0.032014344,0.00006631403],"about_ca_topic_score_codex":0.0012456445,"about_ca_topic_score_gemma":0.0016521321,"teacher_disagreement_score":0.019173766,"about_ca_system_score_codex":0.00066187157,"about_ca_system_score_gemma":0.00068156264,"threshold_uncertainty_score":0.064142644},"labels":[],"label_agreement":null},{"id":"W2921687035","doi":"10.1007/s10470-019-01428-8","title":"Rapid and accurate method for resizing CMOS operational amplifiers","year":2019,"lang":"en","type":"article","venue":"Analog Integrated Circuits and Signal Processing","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":3,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Memorial University of Newfoundland","funders":"National Natural Science Foundation of China","keywords":"CMOS; Resizing; Transistor; Operational amplifier; Electronic engineering; Amplifier; Computer science; Matching (statistics); Process (computing); MOSFET; Electronic circuit; SIGNAL (programming language); Engineering; Electrical engineering; Voltage; Mathematics","score_opus":0.024421346842824973,"score_gpt":0.27055106586857197,"score_spread":0.24612971902574698,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2921687035","genre_codex":"methods","genre_gemma":"methods","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"methods","genre_consensus":"methods","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.011479547,0.0011767074,0.9782251,0.0001624856,0.00032795707,0.00015712595,0.00019240075,0.0034524598,0.004826216],"genre_scores_gemma":[0.12854603,0.0007446419,0.85363084,0.00020911849,0.00011460321,0.00022180591,0.00041030813,0.00037339478,0.015749177],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99923193,0.000053326217,0.000028659608,0.0001336588,0.0005181682,0.00003420512],"domain_scores_gemma":[0.99902165,0.00020048887,0.00010756765,0.00022205072,0.00042218712,0.000026035668],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00046090147,0.00094192015,0.000411552,0.001230663,0.00047750984,0.00059179944,0.0011595974,0.00073880196,0.005388898],"category_scores_gemma":[0.0014509562,0.00047391505,0.00023879453,0.00053099165,0.00040720127,0.0011012617,0.0006949609,0.0010730072,0.003334675],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00007614477,0.000033395096,0.00047293142,0.00017847437,0.000025125475,0.000105515704,0.00010847371,0.0012360996,0.71219724,0.0036840986,0.00429895,0.27758357],"study_design_scores_gemma":[0.000023435743,0.00015530574,0.0019924592,0.000026763793,0.000060988255,0.00084438385,0.000087206565,0.02956055,0.914715,0.0016105016,0.050849766,0.000073590716],"about_ca_topic_score_codex":0.0009966771,"about_ca_topic_score_gemma":0.003207419,"teacher_disagreement_score":0.005388898,"about_ca_system_score_codex":0.00045594113,"about_ca_system_score_gemma":0.00068970583,"threshold_uncertainty_score":0.018027604},"labels":[],"label_agreement":null},{"id":"W2950515615","doi":"10.1016/j.ssc.2019.113658","title":"Empirical model for the velocity-field characteristics of semiconductors exhibiting negative differential mobility","year":2019,"lang":"en","type":"article","venue":"Solid State Communications","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":4,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of British Columbia, Okanagan Campus; University of British Columbia","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Gallium arsenide; Monte Carlo method; Semiconductor; Statistical physics; Field (mathematics); Differential (mechanical device); Drift velocity; Condensed matter physics; Electron mobility; Field dependence; Semiconductor device; Physics; Electron; Computational physics; Materials science; Mathematics; Quantum mechanics; Nanotechnology; Statistics; Thermodynamics; Magnetic field","score_opus":0.060461021400929855,"score_gpt":0.3272593182280748,"score_spread":0.26679829682714495,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2950515615","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.42393294,0.001675287,0.53755045,0.003264082,0.00012749585,0.00023445358,0.001579198,0.0009989477,0.030637046],"genre_scores_gemma":[0.9769414,0.0007172867,0.008500178,0.00014931905,0.00006126744,0.0001252555,0.00047799048,0.000061228246,0.012966082],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99964833,0.0000813133,0.0000148607105,0.00009371232,0.000081224556,0.00008048417],"domain_scores_gemma":[0.99718165,0.0016763002,0.00035274244,0.00026004142,0.00045854884,0.00007084798],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0011934419,0.0007540366,0.0007434393,0.0015950911,0.00035212646,0.0009354171,0.0022288214,0.002164606,0.004619702],"category_scores_gemma":[0.00876357,0.00046703813,0.0006063819,0.0011343986,0.0010248203,0.0025031548,0.0004895362,0.001314443,0.0013824794],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00009072001,0.00021886,0.008285955,0.00013739079,0.000057692705,0.00046572194,0.0003370834,0.7589439,0.0056499154,0.2087668,0.0029403686,0.014105617],"study_design_scores_gemma":[0.000012563279,0.00002009813,0.0015099304,0.00001853424,0.000010488357,0.00017650102,0.000029359804,0.9753201,0.00027507788,0.021922594,0.0006904606,0.000014311473],"about_ca_topic_score_codex":0.0055957623,"about_ca_topic_score_gemma":0.0038954015,"teacher_disagreement_score":0.0055957623,"about_ca_system_score_codex":0.0013665317,"about_ca_system_score_gemma":0.00072194386,"threshold_uncertainty_score":0.0154544115},"labels":[],"label_agreement":null},{"id":"W2951554259","doi":"10.1063/1.4876765","title":"A silicon nanocrystal tunnel field effect transistor","year":2014,"lang":"en","type":"article","venue":"Applied Physics Letters","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":9,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Canadian Institute for Advanced Research; Institut interdisciplinaire d'innovation technologique; Université de Sherbrooke","funders":"","keywords":"Quantum tunnelling; Silicon; Transistor; Doping; Field-effect transistor; Nanocrystal; Polycrystalline silicon; Leakage (economics)","score_opus":0.006066988450115728,"score_gpt":0.1896770545990361,"score_spread":0.1836100661489204,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2951554259","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.8862252,0.0019362207,0.06607935,0.0012681235,0.0005666666,0.000115087256,0.0009254911,0.0015850002,0.04129879],"genre_scores_gemma":[0.9517777,0.00048642256,0.039496254,0.0001840038,0.000032732114,0.00005086759,0.00018413193,0.00004118244,0.00774672],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99991965,0.000004193997,0.0000031294107,0.000026423162,0.000034675068,0.000011972667],"domain_scores_gemma":[0.9999294,0.000012226078,0.000008666693,0.000009143235,0.000024015288,0.000016491038],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000058855803,0.00011273975,0.00017324736,0.00007993906,0.00020706354,0.00028310466,0.00040925032,0.00029104663,0.0012594686],"category_scores_gemma":[0.00010928848,0.000054284446,0.0001273929,0.00008615883,0.00014669093,0.0002825384,0.00013442078,0.00016233996,0.00041459664],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000041713167,0.000029592411,0.0003602212,0.000040726758,0.0000074946806,0.0002851627,0.000026503732,0.0006597767,0.987728,0.0035494254,0.0011746691,0.006096687],"study_design_scores_gemma":[0.000032796266,0.0002723007,0.0015590569,0.000010454442,0.000022165006,0.0010423393,0.000028943074,0.039443098,0.93543077,0.0006670255,0.021467565,0.00002345856],"about_ca_topic_score_codex":0.0025158178,"about_ca_topic_score_gemma":0.0026784053,"teacher_disagreement_score":0.0025158178,"about_ca_system_score_codex":0.00038876332,"about_ca_system_score_gemma":0.0003125389,"threshold_uncertainty_score":0.00500232},"labels":[],"label_agreement":null},{"id":"W2952257392","doi":"10.1145/3307650.3322270","title":"A stochastic-computing based deep learning framework using adiabatic quantum-flux-parametron superconducting technology","year":2019,"lang":"en","type":"preprint","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":38,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Alberta","funders":"","keywords":"Scalability; Adiabatic process; Inference; Logic gate; Computer science; Deep learning; Quantum computer; Superconductivity; Adiabatic circuit; CMOS; Physics; Electronic engineering; Optoelectronics; Quantum; Artificial intelligence; Engineering; Logic synthesis; Algorithm; Quantum mechanics; Logic family","score_opus":0.02843034543446404,"score_gpt":0.27474568539551086,"score_spread":0.24631533996104682,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2952257392","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.01737462,0.0006768788,0.9780149,0.0004953646,0.000060464416,0.00002690169,0.00012263005,0.0004076861,0.0028205314],"genre_scores_gemma":[0.73698694,0.0011901904,0.25164163,0.00041342515,0.0001580029,0.00016166564,0.00051333103,0.0001303404,0.008804482],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99977845,0.000047825448,0.000010040028,0.000048187863,0.00007513315,0.000040496907],"domain_scores_gemma":[0.99978536,0.00008970712,0.000021131678,0.00001583384,0.00006041342,0.000027641294],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0005787246,0.0005460253,0.00090097915,0.00034804788,0.00034835446,0.0010404171,0.0017780581,0.0009231911,0.0019244162],"category_scores_gemma":[0.0009353377,0.00041729427,0.000607362,0.00052768085,0.00081510417,0.0010550211,0.00100999,0.0014477549,0.00034887204],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00006145617,0.000047863068,0.00051287544,0.00006941789,0.00005589253,0.000064311236,0.000024459941,0.8925191,0.0029315883,0.067666605,0.0016864262,0.03435994],"study_design_scores_gemma":[0.0000021077003,0.0000057830325,0.000015029427,0.0000014664499,0.0000021276087,0.0000028798956,7.350036e-7,0.99551904,0.00017663208,0.0040858467,0.00018675646,0.0000015446963],"about_ca_topic_score_codex":0.007851824,"about_ca_topic_score_gemma":0.011417612,"teacher_disagreement_score":0.007851824,"about_ca_system_score_codex":0.0012566587,"about_ca_system_score_gemma":0.0016625767,"threshold_uncertainty_score":0.015612245},"labels":[],"label_agreement":null},{"id":"W2963543486","doi":"10.1103/physrevb.72.115331","title":"Origin of switching noise in<mml:math xmlns:mml=\"http://www.w3.org/1998/Math/MathML\" display=\"inline\"><mml:mrow><mml:mi mathvariant=\"normal\">Ga</mml:mi><mml:mi mathvariant=\"normal\">As</mml:mi><mml:mo>∕</mml:mo><mml:msub><mml:mi mathvariant=\"normal\">Al</mml:mi><mml:mi>x</mml:mi></mml:msub><mml:msub><mml:mi mathvariant=\"normal\">Ga</mml:mi><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub><mml:mi mathvariant=\"normal\">As</mml:mi></mml:mrow></mml:math>lateral gated devices","year":2005,"lang":"lv","type":"article","venue":"Physical Review B","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":139,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Institute for Microstructural Sciences; Regroupement Québécois sur les Matériaux de Pointe; Université de Sherbrooke","funders":"","keywords":"Noise (video); Computer science; Mathematics; Algorithm; Artificial intelligence","score_opus":0.01736001782458853,"score_gpt":0.2549718066069495,"score_spread":0.23761178878236097,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2963543486","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9299053,0.0003926878,0.026352294,0.0008176316,0.000108473745,0.000018893934,0.0006543601,0.0009416103,0.040808614],"genre_scores_gemma":[0.98772556,0.000066731576,0.001715394,0.000050300685,0.0000088448605,0.0000084081,0.00017656015,0.00016342153,0.010084888],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999088,0.000008692607,0.0000019541947,0.000018671284,0.000041721327,0.000020174364],"domain_scores_gemma":[0.99985564,0.00007269173,0.00002166649,0.000013814838,0.0000254831,0.000010580775],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00008913641,0.00017236239,0.00014195811,0.00022826475,0.00032540015,0.0006555461,0.00056764047,0.00036664354,0.007738082],"category_scores_gemma":[0.000367296,0.00010705128,0.0001198158,0.00021980704,0.00050409517,0.0003150231,0.00015805311,0.00056236034,0.0008602623],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00046381803,0.00010458013,0.0031423913,0.00011891963,0.00002752991,0.0006516233,0.0008619296,0.008454281,0.8803274,0.08662899,0.0051266756,0.014091919],"study_design_scores_gemma":[0.000032365013,0.00016833757,0.0105724465,0.00004019042,0.000031361677,0.00044526966,0.00031689083,0.118738726,0.84891224,0.0090638185,0.011626675,0.000051589977],"about_ca_topic_score_codex":0.0020515262,"about_ca_topic_score_gemma":0.0022313274,"teacher_disagreement_score":0.007738082,"about_ca_system_score_codex":0.00081226137,"about_ca_system_score_gemma":0.000178553,"threshold_uncertainty_score":0.025886476},"labels":[],"label_agreement":null},{"id":"W2982331568","doi":"","title":"High-Voltage Low-Current Multijunction Monolithic Interconnected Microcells","year":2019,"lang":"en","type":"preprint","venue":"HAL (Le Centre pour la Communication Scientifique Directe)","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":2,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Institut interdisciplinaire d'innovation technologique; Université de Sherbrooke","funders":"","keywords":"Electrical engineering; Optoelectronics; Current (fluid); Materials science; Voltage; High voltage; Low voltage; Engineering","score_opus":0.013109745271250667,"score_gpt":0.2161263735415395,"score_spread":0.20301662827028882,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2982331568","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9657091,0.0011308788,0.01794719,0.000263473,0.00020144615,0.000031560918,0.00033212441,0.00061494287,0.013769181],"genre_scores_gemma":[0.98816246,0.00024894718,0.0058632027,0.000043899396,0.000037004877,0.000016484424,0.00007865434,0.000033664226,0.0055157123],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99989486,0.000005287137,0.000003078409,0.00003454097,0.000041666986,0.000020486777],"domain_scores_gemma":[0.999877,0.000028688395,0.00001973747,0.000023634962,0.000034732762,0.00001620882],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000070422764,0.00015348686,0.00020649887,0.00016928496,0.00021573498,0.00070199376,0.0007520782,0.00030515715,0.0023738376],"category_scores_gemma":[0.0001262843,0.00013098333,0.00009832707,0.00024291396,0.0001541423,0.0004846481,0.00024312481,0.00025483096,0.0004543733],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0001289464,0.000057284105,0.0003012993,0.00006840303,0.000012412812,0.00005818237,0.000050131377,0.0017630769,0.9847765,0.0017737601,0.00072891737,0.010281113],"study_design_scores_gemma":[0.000040266543,0.00032281582,0.0024281968,0.000010909226,0.00003178991,0.00011411187,0.00005865406,0.031313963,0.95630914,0.00084875955,0.00850827,0.000013062301],"about_ca_topic_score_codex":0.0005379602,"about_ca_topic_score_gemma":0.0022369162,"teacher_disagreement_score":0.0023738376,"about_ca_system_score_codex":0.00045675455,"about_ca_system_score_gemma":0.0001897375,"threshold_uncertainty_score":0.007941306},"labels":[],"label_agreement":null},{"id":"W2983443051","doi":"","title":"Charge Transport in Hexagonal-Phase Core Silicon Nanowires","year":2019,"lang":"en","type":"dissertation","venue":"Spectrum Research Repository (Concordia University)","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"","funders":"Concordia University; Polytechnique Montréal","keywords":"Materials science; Nanowire; Phase (matter); Schottky diode; Crystal (programming language); Nanotechnology; Stacking; Optoelectronics; Silicon; Schottky barrier; Transistor; Condensed matter physics; Diode; Voltage; Electrical engineering; Chemistry","score_opus":0.03600625120597453,"score_gpt":0.2943317483068665,"score_spread":0.2583254971008919,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2983443051","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99762255,0.000035029858,0.0017239735,0.000012776849,0.000005048946,0.0000022453908,0.000019066012,0.000022839711,0.000556442],"genre_scores_gemma":[0.9976331,0.000040090603,0.0018353994,0.000006589195,0.0000019440063,0.000004007319,0.000031798925,0.0000074469867,0.00043964369],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999585,0.0000036155297,0.0000023984753,0.000010578089,0.000015645634,0.000009267857],"domain_scores_gemma":[0.9999057,0.000020067499,0.000028193517,0.000012871276,0.000022506018,0.0000105953195],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00006402635,0.000087542474,0.00010388284,0.00006135793,0.00013269416,0.00023776785,0.00021601532,0.000114471695,0.00032269946],"category_scores_gemma":[0.00012021313,0.00008683734,0.00007480163,0.0000604247,0.00018687108,0.00021812244,0.00015310505,0.00016591392,0.0001021024],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00003399929,0.000021838541,0.0009864265,0.00001692077,0.0000045051506,0.00006664557,0.00003210667,0.0014958554,0.9944957,0.0015246568,0.000040847925,0.0012804329],"study_design_scores_gemma":[0.000013921993,0.00013367324,0.001977272,0.0000025872343,0.000005168326,0.000048801,0.00003269883,0.03057999,0.9659837,0.00048632774,0.00072950794,0.0000063441157],"about_ca_topic_score_codex":0.0007184185,"about_ca_topic_score_gemma":0.0011233039,"teacher_disagreement_score":0.0007184185,"about_ca_system_score_codex":0.0002675162,"about_ca_system_score_gemma":0.00018720012,"threshold_uncertainty_score":0.0019410253},"labels":[],"label_agreement":null},{"id":"W2990319948","doi":"10.18280/ejee.210502","title":"An Approach to Manufacture Small Multiplexer with Dense Field-Effect Transistors","year":2019,"lang":"en","type":"article","venue":"European Journal of Electrical Engineering","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":false,"route_ca_venue":true,"route_about_ca":false,"ca_institutions":"","funders":"","keywords":"Multiplexer; Field-effect transistor; Field (mathematics); Transistor; Optoelectronics; Materials science; Multiplexing; Electrical engineering; Computer science; Telecommunications; Engineering; Mathematics","score_opus":0.005967452740615547,"score_gpt":0.17974786541144716,"score_spread":0.1737804126708316,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2990319948","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.20021875,0.0008936207,0.7920316,0.00017220054,0.00010047136,0.00018182244,0.00015094958,0.0011004024,0.005150113],"genre_scores_gemma":[0.49585816,0.00023335901,0.5013897,0.000043704626,0.000043276927,0.00011227429,0.000087895125,0.000048560116,0.0021831035],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998503,0.000012972424,0.0000069993125,0.000043752843,0.00007176269,0.000014192552],"domain_scores_gemma":[0.9997588,0.00006458208,0.00006035123,0.000060429786,0.000033733828,0.00002220617],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00018639311,0.0004626468,0.00028734762,0.00038413182,0.00027040052,0.00038054513,0.00065658934,0.00036650902,0.0007451149],"category_scores_gemma":[0.00028543847,0.0002880819,0.0002606249,0.00022435818,0.00024072343,0.00063759123,0.0004188905,0.00042204454,0.00027172422],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000032127227,0.000043309778,0.00029486342,0.00008072249,0.000014838198,0.00011904359,0.00004829284,0.007610148,0.9655637,0.005966724,0.00025602104,0.019970194],"study_design_scores_gemma":[0.000029760888,0.0005075,0.0012963603,0.00001496089,0.000039559345,0.00074548926,0.000032882846,0.12181102,0.855964,0.002400699,0.017120006,0.000037737424],"about_ca_topic_score_codex":0.00040099124,"about_ca_topic_score_gemma":0.0008656012,"teacher_disagreement_score":0.0007451149,"about_ca_system_score_codex":0.00038988196,"about_ca_system_score_gemma":0.00031570016,"threshold_uncertainty_score":0.0028288364},"labels":[],"label_agreement":null},{"id":"W2993240189","doi":"10.5075/epfl-iclab-icnf-269301","title":"Shot noise and squeezing in the conduction channel of a Field Effect Transistor at ultra-low temperature","year":2019,"lang":"en","type":"article","venue":"Infoscience (Ecole Polytechnique Fédérale de Lausanne)","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Université de Sherbrooke","funders":"","keywords":"Transistor; Shot noise; Infrasound; Thermal conduction; Noise (video); Optoelectronics; Materials science; Field-effect transistor; Electrical engineering; Channel (broadcasting); Temperature measurement; Physics; Engineering; Computer science; Acoustics; Voltage; Quantum mechanics","score_opus":0.007476801978557824,"score_gpt":0.22464422549969607,"score_spread":0.21716742352113824,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2993240189","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99807894,0.00006667032,0.001446353,0.00004194479,0.000008213993,0.0000029812047,0.000029018642,0.000038368697,0.00028759596],"genre_scores_gemma":[0.99915123,0.000025972058,0.0006123137,0.000010036983,0.000006917845,0.0000034272703,0.00001756821,0.000006907132,0.00016565785],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99969995,0.000044274846,0.000009973947,0.0000657638,0.00011707297,0.00006297708],"domain_scores_gemma":[0.99877924,0.00074606074,0.00019385375,0.0000817867,0.000091819165,0.00010722859],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00027406926,0.00022224509,0.0003122137,0.00034551532,0.0003147799,0.00036084556,0.00049936556,0.00048707114,0.0008745901],"category_scores_gemma":[0.0012404439,0.00015576594,0.00013184042,0.00018565224,0.0010218862,0.0004702951,0.00034649036,0.0005192472,0.00007780646],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00053898344,0.00012319477,0.0031314492,0.000050094728,0.000024588298,0.0004116012,0.00032792872,0.00081537035,0.9914909,0.0007597062,0.00006779794,0.0022584202],"study_design_scores_gemma":[0.000059045702,0.0016182087,0.018319579,0.00001645249,0.000042231273,0.0004696339,0.0001432181,0.01817347,0.9601539,0.0004952084,0.0004554692,0.000053581756],"about_ca_topic_score_codex":0.00059827464,"about_ca_topic_score_gemma":0.00055317424,"teacher_disagreement_score":0.0008745901,"about_ca_system_score_codex":0.00032068905,"about_ca_system_score_gemma":0.00014121826,"threshold_uncertainty_score":0.0029257536},"labels":[],"label_agreement":null},{"id":"W3016916307","doi":"10.1109/lascas45839.2020.9069003","title":"The Impact of the Scaled-Down CMOS Technologies on the Step Response Degradation Caused by the Pole-Zero Doublets in the OTAs","year":2020,"lang":"en","type":"article","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":6,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McGill University","funders":"","keywords":"Transconductance; CMOS; Microelectronics; Node (physics); Electrical engineering; Engineering; Electronic engineering; Amplifier; Computer science; Transistor; Voltage","score_opus":0.02802300616386718,"score_gpt":0.2583081280144123,"score_spread":0.2302851218505451,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3016916307","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.68112314,0.04208183,0.19793765,0.007278069,0.0019186718,0.0001227163,0.0007233372,0.0015025361,0.06731213],"genre_scores_gemma":[0.94529337,0.011589494,0.037692856,0.00053113623,0.00041673958,0.00003669974,0.00013130032,0.00013798394,0.004170364],"study_design_codex":"bench_or_experimental","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9994154,0.00007159186,0.000024007933,0.000119330965,0.00031850982,0.00005122581],"domain_scores_gemma":[0.99759954,0.001099801,0.00024929535,0.00028721668,0.00066746323,0.0000967019],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0006255416,0.0006510501,0.00030836067,0.00044094137,0.00032461065,0.0008361533,0.00071424,0.00087039685,0.0031208568],"category_scores_gemma":[0.0040274137,0.0002791649,0.00029313323,0.00042918415,0.00054036663,0.0017664941,0.00047676914,0.0012432572,0.0010540441],"study_design_candidate":"simulation_or_modeling","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0003676504,0.00013207963,0.005000913,0.0012175135,0.0000960646,0.0016917153,0.00062475656,0.032389395,0.7592846,0.050098754,0.0039148894,0.14518169],"study_design_scores_gemma":[0.000076719305,0.0036726452,0.017544221,0.0006768883,0.00051090214,0.0068314453,0.0009935922,0.1455971,0.66080457,0.04678202,0.1163066,0.0002032019],"about_ca_topic_score_codex":0.00057814294,"about_ca_topic_score_gemma":0.0008341196,"teacher_disagreement_score":0.0031208568,"about_ca_system_score_codex":0.00056435727,"about_ca_system_score_gemma":0.0003607814,"threshold_uncertainty_score":0.01044035},"labels":[],"label_agreement":null},{"id":"W3020654129","doi":"10.1109/csci49370.2019.00284","title":"Combined Genetic Programming and Neural Network Approaches to Electronic Modeling","year":2019,"lang":"en","type":"article","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Carleton University","funders":"","keywords":"Artificial neural network; Genetic programming; Computer science; Extrapolation; Range (aeronautics); High-electron-mobility transistor; Transistor; Genetic algorithm; Artificial intelligence; Machine learning; Theoretical computer science; Electrical engineering; Mathematics; Engineering","score_opus":0.04307210139039342,"score_gpt":0.20582838579640073,"score_spread":0.1627562844060073,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3020654129","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.004082081,0.00017184709,0.9914185,0.00014886896,0.000024499384,0.000019911571,0.000022178778,0.00012732988,0.003984799],"genre_scores_gemma":[0.4229732,0.0012111636,0.5639565,0.00020055722,0.000105813946,0.000327122,0.000117201125,0.00011163621,0.010996824],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9997595,0.00007362707,0.000011744456,0.000037217527,0.00010122476,0.000016694417],"domain_scores_gemma":[0.99965906,0.00020149343,0.00002789939,0.000025051222,0.00007688927,0.000009672735],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00040982035,0.000594039,0.000527584,0.0007317414,0.00027266992,0.00081759115,0.001045334,0.00084802986,0.0014245083],"category_scores_gemma":[0.0013501105,0.00029207594,0.0005710198,0.0007836318,0.00058591255,0.0008509556,0.00058003585,0.0010914728,0.00024273012],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0000066145967,0.000010471377,0.0001395196,0.000027062228,0.000017837641,0.00003608929,0.000018399216,0.9556863,0.0006765435,0.021171333,0.00020749163,0.022002406],"study_design_scores_gemma":[0.0000011318828,0.0000035229086,0.000017212084,0.000002880919,0.0000020081065,0.000006506129,0.0000018759714,0.9942425,0.00020009016,0.0051310086,0.00038929944,0.0000019570052],"about_ca_topic_score_codex":0.0050084307,"about_ca_topic_score_gemma":0.0053927097,"teacher_disagreement_score":0.0050084307,"about_ca_system_score_codex":0.00068372354,"about_ca_system_score_gemma":0.00067998125,"threshold_uncertainty_score":0.009958565},"labels":[],"label_agreement":null},{"id":"W3021862453","doi":"10.1002/smll.201907321","title":"Rethinking the Characterization of Nanoscale Field‐Effect Transistors: A Universal Approach","year":2020,"lang":"en","type":"article","venue":"Small","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Toronto","funders":"Ontario Centres of Excellence","keywords":"Capacitance; Transistor; Field-effect transistor; Threshold voltage; Materials science; Voltage; Characterization (materials science); Hysteresis; Quantum; Conductance; Nanoscopic scale; Measure (data warehouse); Nanotechnology; Channel (broadcasting); Condensed matter physics; Optoelectronics; Physics; Computer science; Quantum mechanics; Telecommunications; Electrode","score_opus":0.023126775065774045,"score_gpt":0.19118751714759075,"score_spread":0.1680607420818167,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3021862453","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.03257855,0.0045010247,0.95819336,0.0004991944,0.00013552645,0.00006640382,0.00011768164,0.0007256039,0.0031827057],"genre_scores_gemma":[0.5979837,0.005342118,0.393087,0.00048381207,0.00015425988,0.00025021663,0.00021075839,0.00019500256,0.0022930575],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9978143,0.00042354697,0.00015824227,0.00044578963,0.0010131327,0.00014509293],"domain_scores_gemma":[0.9976688,0.0006550403,0.0002499161,0.0008903978,0.00047491185,0.000061008595],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0019494996,0.0008890713,0.001290748,0.0020669322,0.0007357302,0.0015865004,0.0020280308,0.0016217515,0.0006203936],"category_scores_gemma":[0.0043809824,0.00052413327,0.0007638125,0.0010811336,0.0030518249,0.0057020183,0.0018738965,0.0018915506,0.00032411216],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0001073531,0.00019276845,0.005513178,0.0012806085,0.00012989776,0.00035418707,0.0011549221,0.053055223,0.36725867,0.2988439,0.002532223,0.26957715],"study_design_scores_gemma":[0.000015712107,0.0003490885,0.0032412577,0.0003855154,0.000087210225,0.0013228039,0.00040261852,0.5027127,0.28232488,0.17055234,0.038413458,0.00019239102],"about_ca_topic_score_codex":0.0010031789,"about_ca_topic_score_gemma":0.001003228,"teacher_disagreement_score":0.0020669322,"about_ca_system_score_codex":0.001236007,"about_ca_system_score_gemma":0.00085147674,"threshold_uncertainty_score":0.010310113},"labels":[],"label_agreement":null},{"id":"W3021969131","doi":"10.1149/09705.0165ecst","title":"Readout Circuit Design Using Experimental Data of Line-TFET Devices","year":2020,"lang":"en","type":"article","venue":"ECS Transactions","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Toronto","funders":"","keywords":"Transistor; Subthreshold conduction; Resistor; Line (geometry); Amplifier; Electrical engineering; Capacitor; Electronic circuit; Linearity; Circuit design; Physics; Optoelectronics; Computer science; Electronic engineering; Voltage; CMOS; Engineering","score_opus":0.24198894651721903,"score_gpt":0.3168938356233478,"score_spread":0.07490488910612875,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3021969131","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.6937355,0.00081781804,0.28793958,0.0005018745,0.00031896963,0.00083113747,0.0027878035,0.002804281,0.010263021],"genre_scores_gemma":[0.9107539,0.0003727938,0.08216773,0.000155376,0.00004827921,0.0004162053,0.00089274644,0.00021120255,0.0049816743],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9996785,0.000035677105,0.000024462684,0.000096982825,0.00012441161,0.00003997613],"domain_scores_gemma":[0.9994573,0.00016853916,0.00005406073,0.000081703954,0.00022166122,0.000016799955],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00037158516,0.0003810359,0.00028657826,0.00024272989,0.00035762362,0.0006453315,0.0012263398,0.00057362835,0.0075312178],"category_scores_gemma":[0.001000005,0.0001896702,0.00019934177,0.00029741778,0.0002233957,0.0009786157,0.00023927951,0.00044074928,0.0009421733],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00029009252,0.00010270132,0.0010417746,0.0003672492,0.000039144008,0.00016786545,0.00009076594,0.0016172887,0.9730163,0.0011855097,0.0008465514,0.021234853],"study_design_scores_gemma":[0.000041167095,0.000687168,0.0014586307,0.000015361044,0.000033470304,0.0001675064,0.00003940247,0.009200477,0.9823184,0.0002193566,0.0058066156,0.000012362172],"about_ca_topic_score_codex":0.00032238115,"about_ca_topic_score_gemma":0.00047511372,"teacher_disagreement_score":0.0075312178,"about_ca_system_score_codex":0.00045971238,"about_ca_system_score_gemma":0.00020890083,"threshold_uncertainty_score":0.025194466},"labels":[],"label_agreement":null},{"id":"W3022057475","doi":"10.1007/s10470-009-9363-1","title":"High-voltage DMOS integrated circuits using floating-gate protection technique","year":2009,"lang":"en","type":"article","venue":"Analog Integrated Circuits and Signal Processing","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":2,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Dalhousie University; Polytechnique Montréal","funders":"Natural Sciences and Engineering Research Council of Canada; Canada Research Chairs; National Research Council Canada; Polytechnique Montréal; CMC Microsystems","keywords":"Gate oxide; Transistor; Electrical engineering; Electronic circuit; Electronic engineering; Gate equivalent; CMOS; Engineering; Voltage; Capacitor; Materials science","score_opus":0.023023776349555953,"score_gpt":0.2393389540252736,"score_spread":0.21631517767571765,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3022057475","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.50799304,0.0027159092,0.4595434,0.00078772096,0.00039245054,0.00017665057,0.00045713046,0.002714906,0.025218805],"genre_scores_gemma":[0.97478265,0.00029802238,0.022158088,0.00010086252,0.00005007338,0.000017740042,0.000073410396,0.00003172303,0.0024874145],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998828,0.000012899614,0.000008767325,0.000027609314,0.000047053614,0.000020745263],"domain_scores_gemma":[0.9997377,0.00006906103,0.00006478039,0.000059584432,0.000056092278,0.00001270534],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00015612923,0.00035330505,0.0002003876,0.00026456127,0.00025666287,0.00049479323,0.0007007378,0.00040472468,0.0022410718],"category_scores_gemma":[0.00043122988,0.00014924437,0.00020067288,0.00028368479,0.0001979636,0.00069395127,0.00026191524,0.00047249222,0.0003331914],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000383017,0.00006488765,0.0016411191,0.00037342685,0.00007781069,0.00037615496,0.0002295523,0.0032712386,0.8659427,0.020249797,0.0020175332,0.10537277],"study_design_scores_gemma":[0.000108026914,0.00086814736,0.0031817004,0.000071888935,0.00012335884,0.001590693,0.00004974622,0.041379757,0.92101216,0.0067030266,0.024879614,0.000031858264],"about_ca_topic_score_codex":0.00026419427,"about_ca_topic_score_gemma":0.0007131005,"teacher_disagreement_score":0.0022410718,"about_ca_system_score_codex":0.0004211857,"about_ca_system_score_gemma":0.00024406592,"threshold_uncertainty_score":0.007497132},"labels":[],"label_agreement":null},{"id":"W3023484550","doi":"10.1109/ted.2020.2988855","title":"Design and Simulation of Steep-Slope Silicon Cold Source FETs With Effective Carrier Distribution Model","year":2020,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":27,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McGill University","funders":"Fonds de recherche du Québec – Nature et technologies; Higher Education Discipline Innovation Project; Natural Sciences and Engineering Research Council of Canada; National Natural Science Foundation of China","keywords":"MOSFET; Quantum tunnelling; Field-effect transistor; Transistor; Silicon; Non-equilibrium thermodynamics; Thermalisation; Materials science; Optoelectronics; Physics; Topology (electrical circuits); Electrical engineering; Engineering; Thermodynamics; Voltage","score_opus":0.013843355873824752,"score_gpt":0.22933456842365907,"score_spread":0.2154912125498343,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3023484550","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.5794111,0.0008592847,0.37646794,0.00075634365,0.00012029937,0.00030201324,0.0018180626,0.0017829167,0.038482025],"genre_scores_gemma":[0.9572391,0.00024621224,0.037873995,0.00007374092,0.000011614397,0.00026663177,0.00033004137,0.0000828035,0.0038758586],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99989104,0.000022115391,0.0000047050207,0.000017376557,0.000041227013,0.000023539536],"domain_scores_gemma":[0.99978226,0.00009839365,0.000027356147,0.000019052408,0.000055341257,0.000017635375],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00021902526,0.00046468122,0.0006712894,0.00031231612,0.00031905543,0.0005802637,0.0012266033,0.0010193897,0.0027252196],"category_scores_gemma":[0.0005601267,0.00030137395,0.0005087667,0.00035804935,0.00033431206,0.00044515368,0.0002617707,0.0003814619,0.00031621824],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00003322746,0.000021187074,0.00041157164,0.000040250274,0.000014583024,0.00006706163,0.000023661283,0.99145186,0.0040139663,0.0019317672,0.00025994706,0.0017309019],"study_design_scores_gemma":[0.000005647949,0.000012047727,0.000048199134,0.0000015632149,0.0000023693988,0.0000034668876,0.0000030042406,0.9990096,0.0005458934,0.00018597537,0.00018056459,0.000001623779],"about_ca_topic_score_codex":0.007473804,"about_ca_topic_score_gemma":0.0060486686,"teacher_disagreement_score":0.007473804,"about_ca_system_score_codex":0.0009368512,"about_ca_system_score_gemma":0.0009906179,"threshold_uncertainty_score":0.01486057},"labels":[],"label_agreement":null},{"id":"W3036391688","doi":"10.1088/1361-6641/ab9ea8","title":"Experimental silicon tunnel-FET device model applied to design a Gm-C filter","year":2020,"lang":"en","type":"article","venue":"Semiconductor Science and Technology","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Toronto","funders":"","keywords":"Silicon; Filter (signal processing); Materials science; Optoelectronics; Engineering physics; Electronic engineering; Electrical engineering; Engineering","score_opus":0.04433464557719699,"score_gpt":0.25636077289245335,"score_spread":0.21202612731525636,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3036391688","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.7299612,0.0007372873,0.2465181,0.0003313649,0.00015381275,0.00028725306,0.0020026146,0.002239586,0.017768659],"genre_scores_gemma":[0.9831508,0.00018286763,0.014003223,0.000021727225,0.0000070791293,0.00009077667,0.00021743652,0.000036501435,0.002289679],"study_design_codex":"bench_or_experimental","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9998547,0.000021282285,0.0000074459463,0.000035727422,0.0000617778,0.000019118095],"domain_scores_gemma":[0.9998386,0.00008040235,0.000015818805,0.00002107508,0.00003967369,0.000004309856],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00025281723,0.0004702525,0.00034358993,0.0002015665,0.00025194374,0.0003497729,0.0009009615,0.00090251415,0.0040264996],"category_scores_gemma":[0.0003809711,0.00016921782,0.0004670713,0.0002387408,0.00022971073,0.00044725786,0.00013979408,0.0003190253,0.00061304314],"study_design_candidate":"simulation_or_modeling","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00047493275,0.000110795496,0.0010244983,0.00072511204,0.0000930515,0.00038822152,0.0002655922,0.1299653,0.8500165,0.0046390668,0.0009501899,0.0113467015],"study_design_scores_gemma":[0.00007202778,0.00078475976,0.0015117425,0.000048497008,0.00006519604,0.00014578403,0.00006134807,0.6918765,0.30001163,0.0008233299,0.004570791,0.000028376166],"about_ca_topic_score_codex":0.0039138193,"about_ca_topic_score_gemma":0.0035487772,"teacher_disagreement_score":0.0040264996,"about_ca_system_score_codex":0.00068128057,"about_ca_system_score_gemma":0.00040606878,"threshold_uncertainty_score":0.013469994},"labels":[],"label_agreement":null},{"id":"W31199295","doi":"10.2196/13930","title":"Administration Agreement for TF051061 Conformed","year":2010,"lang":"en","type":"article","venue":"JMIR Medical Education","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":false,"route_ca_venue":true,"route_about_ca":false,"ca_institutions":"","funders":"","keywords":"Administration (probate law); Political science; Law","score_opus":0.011821123134391156,"score_gpt":0.31735749076357517,"score_spread":0.305536367629184,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W31199295","genre_codex":"other","genre_gemma":"other","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"other","genre_consensus":"other","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.007663386,0.00035026748,0.018495688,0.010920699,0.009951948,0.016825827,0.017737154,0.005118941,0.91293615],"genre_scores_gemma":[0.024659015,0.0002319951,0.009431637,0.0049010827,0.0011276328,0.00879064,0.011320641,0.0010355935,0.9385017],"study_design_codex":"not_applicable","study_design_gemma":"not_applicable","domain_scores_codex":[0.9712921,0.007492325,0.0029854523,0.003667086,0.01087731,0.0036857259],"domain_scores_gemma":[0.935063,0.0074731335,0.0016033688,0.012621754,0.039092243,0.004146573],"candidate_categories":["insufficient_payload"],"consensus_categories":["insufficient_payload"],"category_scores_codex":[0.028010959,0.00069101085,0.0013212463,0.002847473,0.0040983525,0.005197029,0.0028402628,0.0058030854,0.5390501],"category_scores_gemma":[0.0554804,0.0007405166,0.0010163874,0.002291121,0.001529056,0.0025608453,0.0035177073,0.0037804833,0.38444287],"study_design_candidate":"not_applicable","study_design_consensus":"not_applicable","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0013866592,0.00083561,0.0018647515,0.00040259215,0.00003150042,0.0002098912,0.0011498188,0.0002353633,0.004661465,0.031051245,0.848271,0.109900005],"study_design_scores_gemma":[0.00017812922,0.00024986852,0.0030444716,0.00016586311,0.000013418299,0.000116931,0.00023278204,0.0003624256,0.0010741357,0.0014565343,0.99308324,0.000022256629],"about_ca_topic_score_codex":0.008444553,"about_ca_topic_score_gemma":0.009672659,"teacher_disagreement_score":0.4609499,"about_ca_system_score_codex":0.0036019664,"about_ca_system_score_gemma":0.015301784,"threshold_uncertainty_score":0.65748906},"labels":[],"label_agreement":null},{"id":"W3127496929","doi":"10.1088/1742-6596/1765/1/012004","title":"Characterization of InSb nanopillars for field emission applications","year":2021,"lang":"en","type":"article","venue":"Journal of Physics Conference Series","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":4,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McMaster University","funders":"","keywords":"Nanopillar; Anode; Cathode; Materials science; Field electron emission; Characterization (materials science); Electric field; Nanoprobe; Optoelectronics; Electron; Current density; Field (mathematics); Current (fluid); Biasing; Voltage; Nanotechnology; Nanostructure; Physics; Electrode; Electrical engineering; Nanoparticle","score_opus":0.021422051139517374,"score_gpt":0.2481470002118651,"score_spread":0.22672494907234772,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3127496929","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9782422,0.00085219124,0.018136347,0.00009906212,0.000056641904,0.000040610958,0.0008650753,0.0002478227,0.0014599239],"genre_scores_gemma":[0.98103756,0.0003763255,0.0166221,0.00002477394,0.000007908816,0.00005353754,0.00048533222,0.000056257417,0.0013361353],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99991775,0.0000041257913,0.0000039801193,0.000018807219,0.00003954168,0.000015833702],"domain_scores_gemma":[0.9998074,0.000058719157,0.00004466624,0.00001916772,0.000049899216,0.000020031377],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00016781763,0.00029207123,0.00021334962,0.0002049854,0.0002639201,0.00024920283,0.00027472642,0.00044022236,0.00088928605],"category_scores_gemma":[0.00032064598,0.000189094,0.00013840063,0.00014236424,0.00016761215,0.00020325209,0.00012316898,0.00014895631,0.00027032295],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000013056278,0.0000054778097,0.00011051796,0.000028615605,0.0000020883426,0.000039238577,0.000010253748,0.0004521851,0.9987382,0.000063316525,0.000030734955,0.00050615],"study_design_scores_gemma":[0.000008163848,0.00014888459,0.0055318233,0.000012107156,0.000008138258,0.00010922181,0.000028881012,0.010816817,0.9818118,0.000081796956,0.0014255267,0.00001680087],"about_ca_topic_score_codex":0.0011900925,"about_ca_topic_score_gemma":0.001378635,"teacher_disagreement_score":0.0011900925,"about_ca_system_score_codex":0.00032509599,"about_ca_system_score_gemma":0.00015383454,"threshold_uncertainty_score":0.0029749274},"labels":[],"label_agreement":null},{"id":"W3136281835","doi":"10.5555/2133429.3256364","title":"Session details: Analog challenges in nanometer CMOS and digitalization of analog functionality","year":2010,"lang":"en","type":"article","venue":"International Conference on Computer Aided Design","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Infineon Technologies (Canada)","funders":"","keywords":"Session (web analytics); CMOS; Analogue electronics; Nanometre; Computer science; Electrical engineering; Engineering; Electronic circuit; World Wide Web","score_opus":0.10068013470639209,"score_gpt":0.28416481600286236,"score_spread":0.18348468129647028,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3136281835","genre_codex":"other","genre_gemma":"other","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"other","genre_consensus":"other","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.02313533,0.05206339,0.03543809,0.103934065,0.083027735,0.0007336891,0.0020674828,0.0010891928,0.69851094],"genre_scores_gemma":[0.07902605,0.0115739405,0.005722974,0.006433601,0.01806272,0.00022844679,0.0006189669,0.00037494345,0.8779585],"study_design_codex":"not_applicable","study_design_gemma":"not_applicable","domain_scores_codex":[0.9996673,0.000044607794,0.000010341553,0.00006506298,0.0001392623,0.00007337705],"domain_scores_gemma":[0.9992742,0.00021713479,0.000023488046,0.00005917093,0.0001901847,0.00023585207],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0012141545,0.0008206422,0.00065080595,0.00043097307,0.00214708,0.0030037586,0.00078560977,0.00223417,0.14654696],"category_scores_gemma":[0.0011148481,0.0002477943,0.00067207066,0.00048494682,0.0005875181,0.0019415895,0.0016161575,0.002533907,0.026850112],"study_design_candidate":"not_applicable","study_design_consensus":"not_applicable","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00060371344,0.0002469161,0.0010561297,0.00065903977,0.00003804593,0.00034136124,0.0003017681,0.00083341665,0.017330803,0.039214652,0.7939193,0.14545484],"study_design_scores_gemma":[0.000048042344,0.00025799975,0.0016971105,0.00011277711,0.000019214654,0.00044009494,0.00021190607,0.0015749708,0.007168663,0.014419216,0.97401494,0.0000351358],"about_ca_topic_score_codex":0.000732657,"about_ca_topic_score_gemma":0.0025993637,"teacher_disagreement_score":0.14654696,"about_ca_system_score_codex":0.0010504534,"about_ca_system_score_gemma":0.0012700883,"threshold_uncertainty_score":0.49024844},"labels":[],"label_agreement":null},{"id":"W3138435740","doi":"10.17743/jaes.2020.0074","title":"Do We Really Want to Keep the Gate Threshold That High?","year":2021,"lang":"en","type":"article","venue":"Journal of the Audio Engineering Society","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":8,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Lethbridge; McGill University; Centre for Interdisciplinary Research in Music Media and Technology","funders":"Social Sciences and Humanities Research Council of Canada; Goddard Space Flight Center","keywords":"Computer science; Business","score_opus":0.016316055423178436,"score_gpt":0.2180499219520885,"score_spread":0.20173386652891007,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3138435740","genre_codex":"commentary","genre_gemma":"commentary","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"commentary","genre_consensus":"commentary","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.04119717,0.0063374015,0.012494023,0.8572706,0.009537199,0.0001678963,0.0005050244,0.00037575208,0.07211489],"genre_scores_gemma":[0.63773143,0.006690535,0.011247451,0.30359256,0.002843754,0.00040802057,0.00030946397,0.00065396726,0.036522757],"study_design_codex":"not_applicable","study_design_gemma":"not_applicable","domain_scores_codex":[0.9860606,0.0059674643,0.00047798842,0.0010103014,0.004547271,0.0019363074],"domain_scores_gemma":[0.96761584,0.013056299,0.003649806,0.0019597404,0.00709992,0.006618377],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.012567912,0.0005023834,0.00094417366,0.0010306686,0.006614284,0.0114276055,0.0019679815,0.004654377,0.032778613],"category_scores_gemma":[0.096750826,0.00040673747,0.00050160056,0.0011112822,0.010860638,0.012171386,0.0046209632,0.011726064,0.015179907],"study_design_candidate":"not_applicable","study_design_consensus":"not_applicable","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00031658134,0.00038362408,0.039989818,0.0010577125,0.00016773942,0.0009866669,0.052530997,0.0001702682,0.0027328627,0.073572,0.5700172,0.2580745],"study_design_scores_gemma":[0.00006262586,0.0004060111,0.023312423,0.0026739766,0.0001077518,0.0015176613,0.1619165,0.00041889687,0.0025091423,0.14259955,0.6642463,0.00022913446],"about_ca_topic_score_codex":0.0075029144,"about_ca_topic_score_gemma":0.011477146,"teacher_disagreement_score":0.032778613,"about_ca_system_score_codex":0.0040233303,"about_ca_system_score_gemma":0.007590315,"threshold_uncertainty_score":0.10965544},"labels":[],"label_agreement":null},{"id":"W3145723714","doi":"10.1109/nrsc.2005.194043","title":"Multi-band stabilization of CS and CG MESFETs using series and shunt networks","year":2005,"lang":"en","type":"article","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Royal Military College of Canada; Queen's University","funders":"","keywords":"MESFET; Series (stratigraphy); Transistor; Stability (learning theory); Electronic engineering; Gallium arsenide; Computer science; Shunt (medical); Optoelectronics; Materials science; Electrical engineering; Voltage; Engineering; Field-effect transistor","score_opus":0.022104778625549888,"score_gpt":0.23944775776425714,"score_spread":0.21734297913870726,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3145723714","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.8620002,0.00041465947,0.13133395,0.00016117001,0.00006810922,0.000049562757,0.00011283148,0.00076235627,0.005097141],"genre_scores_gemma":[0.9915657,0.000044898286,0.007586887,0.000007776013,0.000008246753,0.000014435801,0.00001657009,0.000022760876,0.00073271454],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999201,0.000010838807,0.000005209789,0.000024685965,0.000028556096,0.000010539861],"domain_scores_gemma":[0.9998272,0.000051038947,0.000041437386,0.000029263232,0.000038834936,0.000012164192],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000190539,0.00025719617,0.00016068059,0.00022747846,0.00025011782,0.00031217176,0.00043831937,0.00027760345,0.0006051983],"category_scores_gemma":[0.0003610859,0.0001283623,0.00018039659,0.00013555477,0.00030736305,0.0004355978,0.0002179823,0.0002366946,0.00015101256],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00012347751,0.000015630565,0.0005313022,0.00003792033,0.000010451498,0.000050641196,0.00006509867,0.010606155,0.97503144,0.00573637,0.00017093166,0.007620516],"study_design_scores_gemma":[0.000013932454,0.00021770198,0.00080234365,0.000008787055,0.000019053345,0.00008528186,0.000019562278,0.14534971,0.8510882,0.0013049768,0.0010807062,0.000009737502],"about_ca_topic_score_codex":0.00056667096,"about_ca_topic_score_gemma":0.0012112135,"teacher_disagreement_score":0.0006051983,"about_ca_system_score_codex":0.000496763,"about_ca_system_score_gemma":0.00013767078,"threshold_uncertainty_score":0.0036042333},"labels":[],"label_agreement":null},{"id":"W3158502690","doi":"","title":"Impact of gate protection silicon nitride film on the sub-quarter micron transistor performances","year":2004,"lang":"en","type":"article","venue":"Journal of the Korean Crystal Growth and Crystal Technology","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":false,"route_ca_aff":false,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":true,"ca_institutions":"","funders":"","keywords":"Materials science; Quarter (Canadian coin); Optoelectronics; Transistor; Silicon nitride; Silicon; Nitride; Thin-film transistor; Engineering physics; Electrical engineering; Nanotechnology; Engineering; Voltage; Layer (electronics)","score_opus":0.008892582873552613,"score_gpt":0.20461501343387833,"score_spread":0.19572243056032573,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3158502690","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.997445,0.0007922635,0.00024311956,0.000080690916,0.000045836863,0.0000030292545,0.00009202906,0.00002969076,0.0012683114],"genre_scores_gemma":[0.99890876,0.0002774677,0.00013513376,0.00001659094,0.000008856505,0.0000016424624,0.000062176616,0.000009698605,0.00057972776],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999207,0.000005473041,0.0000036325112,0.000020652322,0.000022082288,0.000027509146],"domain_scores_gemma":[0.99968386,0.00012801193,0.00005279656,0.000023374836,0.00006942056,0.000042542626],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00010080797,0.00021427171,0.00029304437,0.000113286646,0.00025090174,0.00045340153,0.0002886466,0.00041719124,0.0023528477],"category_scores_gemma":[0.00042942126,0.00015999719,0.00014229366,0.00012465123,0.00014935838,0.0004262353,0.00017977311,0.00023774634,0.00027489095],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00045177972,0.00002584604,0.0013226051,0.00007116333,0.000018076738,0.00018594798,0.00005022063,0.000770809,0.9945575,0.00012657835,0.00014552708,0.002273914],"study_design_scores_gemma":[0.000034420293,0.00074512913,0.008604456,0.0000150434835,0.000073836614,0.0002699513,0.00009341963,0.0063818907,0.9827132,0.000073557385,0.0009849799,0.000010154874],"about_ca_topic_score_codex":0.0011782257,"about_ca_topic_score_gemma":0.0022145915,"teacher_disagreement_score":0.0023528477,"about_ca_system_score_codex":0.0003031771,"about_ca_system_score_gemma":0.00030235012,"threshold_uncertainty_score":0.007871032},"labels":[],"label_agreement":null},{"id":"W3166670648","doi":"10.1109/fccm51124.2021.00011","title":"Flexible Instrumentation for Live On-Chip Debug of Machine Learning Training on FPGAs","year":2021,"lang":"en","type":"article","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":3,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of British Columbia","funders":"Engineering and Physical Sciences Research Council","keywords":"Instrumentation (computer programming); Debugging; Computer science; Embedded system; Firmware; Field-programmable gate array; Key (lock); Computer architecture; Computer hardware; Machine learning; Operating system","score_opus":0.05122883513003532,"score_gpt":0.27620478382025454,"score_spread":0.22497594869021922,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3166670648","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.16621983,0.0008770003,0.7833511,0.0006676246,0.00035419269,0.00027918897,0.0006734697,0.039520625,0.008056961],"genre_scores_gemma":[0.8795543,0.00021776253,0.11486681,0.00040582876,0.000049946815,0.0002465839,0.00037133344,0.0011265032,0.0031610876],"study_design_codex":"design_other","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9989692,0.0002660566,0.00007078442,0.00020792263,0.00031339025,0.00017261773],"domain_scores_gemma":[0.99640214,0.0016440954,0.00028085182,0.0012224314,0.00030055552,0.00015001708],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.001170302,0.00086347293,0.00049141305,0.00089292566,0.0003519345,0.0008848917,0.0020650073,0.0005938689,0.0070891147],"category_scores_gemma":[0.0064376905,0.00044759543,0.0002132081,0.0004411936,0.00078991073,0.0015608937,0.0016826462,0.0011958948,0.0009587023],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0025229396,0.0005094411,0.025533259,0.0008513719,0.0001424676,0.0015183765,0.0019300855,0.07609316,0.15364705,0.035744518,0.031004963,0.6705024],"study_design_scores_gemma":[0.00033031605,0.0015921697,0.011956931,0.00031097038,0.000101708756,0.0013272156,0.00050389476,0.45675594,0.40835604,0.02170357,0.09688704,0.00017420715],"about_ca_topic_score_codex":0.0005370962,"about_ca_topic_score_gemma":0.00079858385,"teacher_disagreement_score":0.0070891147,"about_ca_system_score_codex":0.00061354967,"about_ca_system_score_gemma":0.00062594836,"threshold_uncertainty_score":0.023715436},"labels":[],"label_agreement":null},{"id":"W3169700765","doi":"10.1109/ted.2021.3083602","title":"A Multiscale Simulation Framework for Steep-Slope Si Nanowire Cold Source FET","year":2021,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":11,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McGill University","funders":"Fonds de recherche du Québec – Nature et technologies; Natural Sciences and Engineering Research Council of Canada; National Natural Science Foundation of China","keywords":"Nanowire; Scaling; Benchmark (surveying); Multiscale modeling; Optoelectronics; MOSFET; Computation; Materials science; Transistor; Electronic engineering; Physics; Voltage; Computational physics; Computer science; Engineering; Quantum mechanics; Chemistry; Algorithm","score_opus":0.01898258309221668,"score_gpt":0.27304378055854284,"score_spread":0.25406119746632616,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3169700765","genre_codex":"methods","genre_gemma":"methods","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"methods","genre_consensus":"methods","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.09199687,0.0006846417,0.87798524,0.00070481474,0.0001478742,0.00017040761,0.00094226707,0.0012012135,0.026166754],"genre_scores_gemma":[0.7529642,0.000771851,0.23755753,0.0002652807,0.00008974312,0.0007383311,0.00096219825,0.0004919297,0.0061588],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9998896,0.00002980176,0.00000505442,0.000013889604,0.000043433858,0.000018288716],"domain_scores_gemma":[0.99980205,0.00009127727,0.000015343678,0.000019885416,0.00004939664,0.000022135875],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00031573116,0.0005204786,0.0006747835,0.0004556628,0.00058709295,0.00064830284,0.0013577925,0.001095952,0.003669924],"category_scores_gemma":[0.0008106167,0.00036304787,0.000804381,0.00035961848,0.00047767605,0.0005571067,0.00072105275,0.0006911679,0.00039324592],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000017154383,0.00002868255,0.0004389696,0.00003675358,0.000022209035,0.000065158005,0.000035298584,0.96766895,0.002904237,0.026071602,0.00043739713,0.0022735426],"study_design_scores_gemma":[0.0000030223632,0.0000032043731,0.00002610403,0.0000017582862,0.0000015980229,0.0000028406314,0.0000025666882,0.99822515,0.000091036716,0.0013047255,0.00033624677,0.0000018327504],"about_ca_topic_score_codex":0.011150637,"about_ca_topic_score_gemma":0.008523162,"teacher_disagreement_score":0.011150637,"about_ca_system_score_codex":0.0008690627,"about_ca_system_score_gemma":0.0012500236,"threshold_uncertainty_score":0.022171438},"labels":[],"label_agreement":null},{"id":"W3174874515","doi":"10.17762/de.vi.2286","title":"Enhancement in Retention Time of 3TDRAM Using Double Gate Finfet Technology at Nanometer Regime.","year":2021,"lang":"en","type":"article","venue":"Design Engineering","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":false,"route_ca_venue":true,"route_about_ca":false,"ca_institutions":"","funders":"","keywords":"CMOS; Transistor; Dram; Leakage (economics); Electrical engineering; Capacitance; Electronic engineering; Very-large-scale integration; Metal gate; Threshold voltage; Materials science; Gate oxide; Voltage; Engineering; Optoelectronics; Physics","score_opus":0.029674547637487936,"score_gpt":0.22677845935154067,"score_spread":0.19710391171405273,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3174874515","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.96508884,0.0061513023,0.016431428,0.00058707636,0.00028632808,0.000026886402,0.00063743826,0.0007019298,0.0100887595],"genre_scores_gemma":[0.98952895,0.00081110327,0.005348021,0.000094656716,0.000018212293,0.000010162628,0.00023125249,0.000020015686,0.0039377105],"study_design_codex":"bench_or_experimental","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9999287,0.00000393362,0.0000043083874,0.000018828063,0.000027787833,0.000016419433],"domain_scores_gemma":[0.9997737,0.000059936516,0.000050540097,0.000027029007,0.00007146572,0.000017284381],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000083310886,0.00013547466,0.00014906374,0.00016567962,0.00014537992,0.0002900754,0.00040046577,0.00044324194,0.0015763779],"category_scores_gemma":[0.00029655927,0.00007807417,0.00022562254,0.00022495107,0.00009452065,0.0004627959,0.00011217546,0.00017918047,0.00031760082],"study_design_candidate":"simulation_or_modeling","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00018111044,0.00004908164,0.0029564032,0.00021925152,0.000025701502,0.0010843666,0.00014591309,0.0014692819,0.9616348,0.001125323,0.0014906756,0.029618012],"study_design_scores_gemma":[0.000024334284,0.0019574321,0.010053417,0.000055036828,0.00006823391,0.00394181,0.0001681814,0.017480344,0.9512959,0.00068783865,0.014236487,0.000030958097],"about_ca_topic_score_codex":0.00044070036,"about_ca_topic_score_gemma":0.0012349956,"teacher_disagreement_score":0.0015763779,"about_ca_system_score_codex":0.00018787569,"about_ca_system_score_gemma":0.0001469854,"threshold_uncertainty_score":0.0052734613},"labels":[],"label_agreement":null},{"id":"W3176271603","doi":"10.18280/ejee.230309","title":"Analytical Modeling of Line-Tunneling TFETs Based on Low-Bandgap Semiconductors","year":2021,"lang":"en","type":"article","venue":"European Journal of Electrical Engineering","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":false,"route_ca_venue":true,"route_about_ca":false,"ca_institutions":"","funders":"","keywords":"Quantum tunnelling; Band gap; Semiconductor; Materials science; Condensed matter physics; Doping; Optoelectronics; Insulator (electricity); Current (fluid); Physics","score_opus":0.019316743695368233,"score_gpt":0.21884518826279922,"score_spread":0.199528444567431,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3176271603","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.25245392,0.0032243994,0.6933047,0.00077009306,0.00016809306,0.0001966223,0.0009096446,0.00084729795,0.048125234],"genre_scores_gemma":[0.9424301,0.0022277806,0.04305576,0.000109897876,0.000042131553,0.00020111325,0.0002482522,0.000088741894,0.011596222],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9999188,0.000012524213,0.0000039631095,0.000013927628,0.000036537484,0.000014182957],"domain_scores_gemma":[0.999918,0.00003064261,0.000011989501,0.000007607187,0.000028205966,0.000003497806],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0001599008,0.00035524316,0.0003780111,0.00033453142,0.000255066,0.00040770893,0.0009541706,0.0007886302,0.0011524584],"category_scores_gemma":[0.00037590397,0.00017845498,0.00057534495,0.0003277458,0.00026886375,0.0006612555,0.00015168304,0.00031690215,0.0003912642],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000042728112,0.00004205757,0.00066384004,0.00024201792,0.000030362928,0.00036801686,0.00018071054,0.9031252,0.055197824,0.03163355,0.00077173754,0.0077019054],"study_design_scores_gemma":[0.0000027286467,0.000010541911,0.000079896825,0.00000737285,0.000004604221,0.00003297395,0.000008676511,0.9960444,0.0019088963,0.0012214553,0.00067516865,0.0000033358638],"about_ca_topic_score_codex":0.004503187,"about_ca_topic_score_gemma":0.0032432647,"teacher_disagreement_score":0.004503187,"about_ca_system_score_codex":0.0009476335,"about_ca_system_score_gemma":0.00061240926,"threshold_uncertainty_score":0.008953929},"labels":[],"label_agreement":null},{"id":"W3184967244","doi":"10.1016/b978-0-323-85172-5.00008-3","title":"Analytical model and sensitivity analysis of a gate-engineered dielectric modulated junctionless nanowire transistor-based biosensor","year":2021,"lang":"en","type":"book-chapter","venue":"Elsevier eBooks","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":2,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McMaster University","funders":"","keywords":"Biomolecule; Nanowire; Biosensor; Materials science; Threshold voltage; Sensitivity (control systems); Dielectric; Optoelectronics; Transistor; Voltage; Gate dielectric; Nanotechnology; Electronic engineering; Electrical engineering; Engineering","score_opus":0.017582833999257863,"score_gpt":0.21889321074011256,"score_spread":0.2013103767408547,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3184967244","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.14272693,0.0046247914,0.81689674,0.0008661318,0.00029857902,0.00014165761,0.0004374724,0.0010996079,0.032908104],"genre_scores_gemma":[0.9255583,0.0018370316,0.05193384,0.00020664101,0.000073007664,0.000086835855,0.00018604263,0.00006993946,0.020048322],"study_design_codex":"bench_or_experimental","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9998323,0.00002789821,0.0000057634334,0.00004725445,0.00007540466,0.000011354291],"domain_scores_gemma":[0.9999052,0.00004886686,0.000010031022,0.000008904622,0.000024475934,0.000002506689],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00017363252,0.00033774605,0.00044170112,0.00018991488,0.0001911721,0.00058313564,0.0010990943,0.0010694319,0.00096264534],"category_scores_gemma":[0.0003974875,0.0002560655,0.0004798831,0.00024331218,0.00036324485,0.00060422515,0.00020979765,0.00035648415,0.00038716503],"study_design_candidate":"simulation_or_modeling","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00010077188,0.00011388216,0.00043994887,0.0003210141,0.0000949476,0.00050052797,0.00017478666,0.24269123,0.69901115,0.028237013,0.0016412525,0.026673565],"study_design_scores_gemma":[0.0000022021,0.00003320469,0.0002229722,0.000008793939,0.0000135236705,0.00008518985,0.000010476996,0.97541463,0.02117651,0.0018516479,0.0011722579,0.000008621701],"about_ca_topic_score_codex":0.001630198,"about_ca_topic_score_gemma":0.0017554606,"teacher_disagreement_score":0.001630198,"about_ca_system_score_codex":0.00083463284,"about_ca_system_score_gemma":0.00031796924,"threshold_uncertainty_score":0.0060557127},"labels":[],"label_agreement":null},{"id":"W3195685817","doi":"10.1063/5.0053789","title":"Strain-tuning PtSe2 for high ON-current lateral tunnel field-effect transistors","year":2021,"lang":"en","type":"article","venue":"Applied Physics Letters","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":11,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Ontario Ministry of Research and Innovation; Natural Sciences and Engineering Research Council of Canada","keywords":"Quantum tunnelling; Materials science; Transistor; Field-effect transistor; Optoelectronics; Monolayer; Tunnel field-effect transistor; Strain engineering; Effective mass (spring–mass system); Subthreshold slope; Channel length modulation; Ion; MOSFET; Voltage; Condensed matter physics; Nanotechnology; Electrical engineering; Chemistry; Physics","score_opus":0.017187114821984362,"score_gpt":0.23341010911633897,"score_spread":0.2162229942943546,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3195685817","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99660873,0.00009539289,0.0015912089,0.00006471414,0.00000928823,0.0000056095832,0.000082896484,0.000038159833,0.0015040442],"genre_scores_gemma":[0.9979054,0.00009521133,0.0016590859,0.000008652922,0.0000023056473,0.000009717363,0.00005555604,0.000012981759,0.0002510703],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99996924,0.0000044902945,0.000001580533,0.0000046031796,0.000012254932,0.0000078834255],"domain_scores_gemma":[0.9999448,0.000020412092,0.000012083227,0.000005707903,0.000010106163,0.0000068552013],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000093967676,0.00024187812,0.00021087662,0.00013033682,0.00015667087,0.0002840206,0.00025997913,0.0002484432,0.0012010285],"category_scores_gemma":[0.000307854,0.000121797944,0.00015644978,0.0001869135,0.00015458168,0.0003008962,0.00015816814,0.00015009078,0.0001299934],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00043680376,0.00017831537,0.0060386024,0.0004277078,0.00008068715,0.0005762874,0.00009829157,0.46479964,0.512782,0.004109232,0.00062991463,0.009842464],"study_design_scores_gemma":[0.00011540105,0.0005666407,0.0042714523,0.000015097532,0.000044479402,0.00009718447,0.00009567375,0.84969294,0.14226936,0.0011324879,0.0016680191,0.00003132936],"about_ca_topic_score_codex":0.0014299756,"about_ca_topic_score_gemma":0.0022247436,"teacher_disagreement_score":0.0014299756,"about_ca_system_score_codex":0.00026711964,"about_ca_system_score_gemma":0.00021569795,"threshold_uncertainty_score":0.00401783},"labels":[],"label_agreement":null},{"id":"W3203918559","doi":"10.1103/physrevmaterials.6.104002","title":"Single-dopant band bending fluctuations in <mml:math xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"><mml:msub><mml:mrow><mml:mi>MoSe</mml:mi></mml:mrow><mml:mn>2</mml:mn></mml:msub></mml:math> measured with electrostatic force microscopy","year":2022,"lang":"lv","type":"article","venue":"Physical Review Materials","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":5,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McGill University","funders":"Natural Sciences and Engineering Research Council of Canada; Canada Foundation for Innovation","keywords":"Dopant; Materials science; Band bending; Metal; Semiconductor; Doping; Condensed matter physics; Analytical Chemistry (journal); Optoelectronics; Physics","score_opus":0.023606948395996977,"score_gpt":0.2610763776847398,"score_spread":0.23746942928874282,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3203918559","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99891603,0.000043656008,0.0007016387,0.000015792322,0.0000026518446,0.0000019645474,0.0000458828,0.0000144700425,0.00025803575],"genre_scores_gemma":[0.99933857,0.000021051186,0.00039365457,0.0000049548053,0.0000012218242,0.0000020305256,0.000030369034,0.0000026979073,0.00020550216],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999596,0.000002642385,0.0000019877975,0.000012295224,0.000013732911,0.000009729366],"domain_scores_gemma":[0.99987924,0.000041321113,0.00002903909,0.000010360508,0.000021712467,0.00001834061],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000073993426,0.00009297502,0.00009302264,0.00017864889,0.00016612066,0.00021807253,0.00015961715,0.00017116337,0.0008936279],"category_scores_gemma":[0.00023281907,0.00008109583,0.00006677973,0.00012488369,0.00018940527,0.0002165713,0.000105609884,0.00018018755,0.00010059959],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000049446113,0.00002122487,0.0024177183,0.000018564922,0.0000069750845,0.00007392011,0.00008387029,0.0004038706,0.99466515,0.00029039846,0.000050234543,0.0019186314],"study_design_scores_gemma":[0.000009843894,0.00015307676,0.049675122,0.0000051013567,0.0000131030365,0.00019658351,0.00017980741,0.021524493,0.9272817,0.00029761795,0.0006465969,0.000016869088],"about_ca_topic_score_codex":0.00051976595,"about_ca_topic_score_gemma":0.0010066177,"teacher_disagreement_score":0.0008936279,"about_ca_system_score_codex":0.00023752157,"about_ca_system_score_gemma":0.00005982086,"threshold_uncertainty_score":0.002989471},"labels":[],"label_agreement":null},{"id":"W3207265452","doi":"10.4271/14-11-01-0010","title":"A Comprehensive Analytical Switching Transients and Loss Modeling Approach with Accurate Parasitic Parameters for Enhancement-Mode Gallium Nitride Transistors","year":2021,"lang":"en","type":"article","venue":"SAE International Journal of Electrified Vehicles","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Concordia University; University of Windsor","funders":"","keywords":"Gallium nitride; Materials science; Optoelectronics; Transistor; Mode (computer interface); Nitride; Electronic engineering; Computer science; Electrical engineering; Nanotechnology; Engineering; Voltage","score_opus":0.031045750947622113,"score_gpt":0.28462922324391443,"score_spread":0.2535834722962923,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3207265452","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.03780216,0.0015658954,0.9420316,0.00026069526,0.00007654835,0.00009901464,0.00021046531,0.00087242934,0.017081168],"genre_scores_gemma":[0.87298906,0.0030696567,0.102572836,0.0001482262,0.00008365098,0.00028578652,0.0003404178,0.0002435691,0.0202668],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99986875,0.00002635739,0.000006384994,0.00002320771,0.000060693346,0.0000145333215],"domain_scores_gemma":[0.9999331,0.000018262428,0.000009804573,0.000011534424,0.000024613084,0.00000276079],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0002038864,0.0007024646,0.00045714597,0.00047006944,0.00035865197,0.0006355624,0.00092551135,0.0006552609,0.0011279183],"category_scores_gemma":[0.00033657395,0.00031455728,0.0009265782,0.0003682126,0.00024668474,0.0011103051,0.0002920417,0.00049933343,0.0005340992],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000042484433,0.000057496345,0.0005491132,0.0001595253,0.00004106129,0.00031144277,0.00023233626,0.8957508,0.04816186,0.01870742,0.0015976799,0.03438882],"study_design_scores_gemma":[0.0000017626056,0.000020965832,0.00007285957,0.000009845408,0.000009403248,0.000056436013,0.0000122182455,0.99454087,0.0021971082,0.0012933563,0.0017795389,0.00000569476],"about_ca_topic_score_codex":0.0031726074,"about_ca_topic_score_gemma":0.0037691453,"teacher_disagreement_score":0.0031726074,"about_ca_system_score_codex":0.0007851487,"about_ca_system_score_gemma":0.00062150176,"threshold_uncertainty_score":0.0063082576},"labels":[],"label_agreement":null},{"id":"W3217007615","doi":"10.1109/mwsym.1994.335575","title":"A new large signal HBT model","year":2002,"lang":"en","type":"article","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":36,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Bell (Canada)","funders":"","keywords":"Heterojunction bipolar transistor; Spice; SIGNAL (programming language); Computer science; Range (aeronautics); Extraction (chemistry); Electronic engineering; Electrical engineering; Engineering; Programming language; Transistor; Chemistry","score_opus":0.027983728763976916,"score_gpt":0.21540513336118575,"score_spread":0.18742140459720882,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3217007615","genre_codex":"methods","genre_gemma":"methods","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"methods","genre_consensus":"methods","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.010755314,0.0003853031,0.958057,0.00031958474,0.00016303468,0.00009521417,0.00076358806,0.0010745534,0.028386448],"genre_scores_gemma":[0.5643934,0.0024010802,0.28097686,0.00075284665,0.00036355932,0.00075454626,0.0027495539,0.0011864709,0.14642167],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9997563,0.000029646875,0.000008956983,0.00004372049,0.00013925451,0.000022169337],"domain_scores_gemma":[0.99980766,0.00004924941,0.000014033162,0.000034344073,0.0000832397,0.000011473233],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00028196658,0.00046449568,0.0004912756,0.00040851193,0.00025412926,0.00090672466,0.0015445756,0.0009837286,0.01012179],"category_scores_gemma":[0.0006562947,0.0002589288,0.00061846693,0.00038857252,0.00029722278,0.0018186044,0.00046474324,0.0010449552,0.0031224713],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00008825915,0.00006928835,0.0005034227,0.00019009276,0.000059034075,0.00036891812,0.00016999843,0.80245554,0.037175417,0.10434414,0.008502456,0.046073504],"study_design_scores_gemma":[0.000009601118,0.000024105762,0.00006993804,0.0000067069263,0.00001493356,0.00007987488,0.0000069630273,0.9813337,0.0020006509,0.0051752576,0.011270997,0.0000073663],"about_ca_topic_score_codex":0.0023784281,"about_ca_topic_score_gemma":0.0021395464,"teacher_disagreement_score":0.01012179,"about_ca_system_score_codex":0.0005194083,"about_ca_system_score_gemma":0.0005976454,"threshold_uncertainty_score":0.033860743},"labels":[],"label_agreement":null},{"id":"W4210552504","doi":"10.3390/electronics11030435","title":"A Review of Machine Learning Techniques in Analog Integrated Circuit Design Automation","year":2022,"lang":"en","type":"review","venue":"Electronics","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":77,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Public Health Ontario","funders":"","keywords":"Computer science; Automation; Electronic design automation; Integrated circuit; Mixed-signal integrated circuit; State (computer science); Circuit design; Task (project management); Analogue electronics; Sizing; Electronic engineering; Computer architecture; Electronic circuit; Computer engineering; Engineering; Systems engineering; Electrical engineering; Embedded system","score_opus":0.047640377441932294,"score_gpt":0.30012288534262727,"score_spread":0.252482507900695,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4210552504","genre_codex":"review","genre_gemma":"review","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"review","genre_consensus":"review","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.00059775525,0.9808452,0.011250329,0.00041376438,0.00047647004,0.00002519989,0.000073964526,0.00007364877,0.006243541],"genre_scores_gemma":[0.0049754297,0.9816535,0.009213714,0.00028639796,0.0006008443,0.000034583984,0.00014176226,0.000019582763,0.0030740497],"study_design_codex":"design_other","study_design_gemma":"not_applicable","domain_scores_codex":[0.99957365,0.0000655215,0.00006234647,0.00008929306,0.00018339876,0.00002577828],"domain_scores_gemma":[0.99895954,0.00063758035,0.00007496973,0.000042348653,0.00025993475,0.000025590838],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0007325012,0.0010288963,0.0009925077,0.0022587636,0.0003081726,0.0010706318,0.0009990418,0.0009428487,0.005076708],"category_scores_gemma":[0.00153812,0.0005148712,0.0007274564,0.004063189,0.0004175585,0.0017510168,0.00049568334,0.0013668292,0.0029149114],"study_design_candidate":"not_applicable","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000036548743,0.000092292605,0.0002814528,0.01502145,0.000091306574,0.00013276075,0.000075224874,0.0032999602,0.0024585146,0.014057618,0.018955912,0.945497],"study_design_scores_gemma":[0.000009595725,0.00018745291,0.00083424227,0.004568586,0.00014098892,0.0007721512,0.000064213826,0.0035598546,0.0031359224,0.00895993,0.97771275,0.000054245564],"about_ca_topic_score_codex":0.0009387222,"about_ca_topic_score_gemma":0.0011168816,"teacher_disagreement_score":0.005076708,"about_ca_system_score_codex":0.00052084186,"about_ca_system_score_gemma":0.0009561103,"threshold_uncertainty_score":0.01698327},"labels":[],"label_agreement":null},{"id":"W4214805742","doi":"10.1002/0471221562.ch3","title":"SOI CMOS Devices–Part II","year":2002,"lang":"en","type":"other","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Silicon on insulator; CMOS; Optoelectronics; Transistor; Materials science; Electrical engineering; Silicon; Engineering; Voltage","score_opus":0.02013690198500386,"score_gpt":0.21645827315623659,"score_spread":0.19632137117123272,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4214805742","genre_codex":"other","genre_gemma":"other","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"other","genre_consensus":"other","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.016407501,0.11305111,0.069405906,0.0026752332,0.0080087185,0.0005286593,0.0035148242,0.0019782393,0.7844299],"genre_scores_gemma":[0.13502885,0.11563737,0.052509263,0.003367897,0.004201152,0.0006339567,0.00719346,0.00094095187,0.6804871],"study_design_codex":"design_other","study_design_gemma":"not_applicable","domain_scores_codex":[0.99975103,0.000014691062,0.00001147045,0.000046033976,0.00015350059,0.000023311957],"domain_scores_gemma":[0.99989045,0.00001596963,0.000009125971,0.00002268392,0.00005478863,0.000006921253],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00013673223,0.0007149377,0.00040757546,0.00078253105,0.0005475936,0.0012685481,0.0006041926,0.0007903365,0.031432938],"category_scores_gemma":[0.00027052817,0.00031071476,0.0003725324,0.00091328437,0.00032783425,0.0010261822,0.00050193106,0.0006345907,0.01982449],"study_design_candidate":"not_applicable","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00012215272,0.00011124052,0.0006269127,0.0023522514,0.000049754868,0.0003379268,0.0003311493,0.0051340675,0.09564607,0.12095803,0.20628737,0.568043],"study_design_scores_gemma":[0.0000039561983,0.000064769316,0.00045807872,0.00013098631,0.000010115077,0.00041709817,0.000041046467,0.0013969287,0.013339227,0.0071040676,0.97702,0.000013761477],"about_ca_topic_score_codex":0.00054237753,"about_ca_topic_score_gemma":0.00081517565,"teacher_disagreement_score":0.031432938,"about_ca_system_score_codex":0.0006424574,"about_ca_system_score_gemma":0.00042672295,"threshold_uncertainty_score":0.10515362},"labels":[],"label_agreement":null},{"id":"W4226263599","doi":"10.1109/access.2022.3159809","title":"Numerical Investigations of Nanowire Gate-All-Around Negative Capacitance GaAs/InN Tunnel FET","year":2022,"lang":"en","type":"article","venue":"IEEE Access","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":20,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Ottawa","funders":"","keywords":"Transconductance; Quantum tunnelling; Materials science; Optoelectronics; Subthreshold swing; Nanowire; Ferroelectricity; Tunnel field-effect transistor; Subthreshold slope; Dielectric; Heterojunction; Transistor; Threshold voltage; Electrical engineering; Voltage; Field-effect transistor; Engineering","score_opus":0.0520067461670553,"score_gpt":0.28443110544333955,"score_spread":0.23242435927628424,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4226263599","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.951358,0.0007716327,0.020226268,0.00061641197,0.00006978853,0.000045420235,0.0007984175,0.00022610494,0.02588809],"genre_scores_gemma":[0.9936718,0.00011621586,0.0046959575,0.000043984626,0.0000070374663,0.00002482353,0.000119760494,0.000023282393,0.0012972174],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9999397,0.000012964234,0.0000030806207,0.000009604294,0.000017147127,0.000017450822],"domain_scores_gemma":[0.99966335,0.00017578382,0.000039478273,0.000018506198,0.000078496116,0.000024356],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00019333056,0.00026506066,0.0004021232,0.00041161943,0.00042192428,0.00044282255,0.0005800975,0.00089763786,0.002588591],"category_scores_gemma":[0.001029216,0.00020593396,0.00037848722,0.0004035231,0.00038557054,0.00042868673,0.00025211342,0.0002996112,0.00013594842],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000052987016,0.000046413974,0.0039992426,0.00010058775,0.000034558612,0.000378241,0.00005818276,0.9806051,0.0050366046,0.0069509647,0.00051403744,0.002223087],"study_design_scores_gemma":[0.000006298124,0.000010549556,0.00041632686,0.0000057621037,0.0000050016115,0.00001938154,0.000017873135,0.9984174,0.00037910696,0.00048727533,0.00023085736,0.0000041632784],"about_ca_topic_score_codex":0.013585402,"about_ca_topic_score_gemma":0.010921632,"teacher_disagreement_score":0.013585402,"about_ca_system_score_codex":0.00070983276,"about_ca_system_score_gemma":0.0005440214,"threshold_uncertainty_score":0.027012646},"labels":[],"label_agreement":null},{"id":"W4231179261","doi":"10.1149/ma2011-01/17/1162","title":"Improved Model for Nanowire BioFETs on SOI Operating in Electrolyte","year":2011,"lang":"en","type":"article","venue":"ECS Meeting Abstracts","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"National Research Council Canada; Institute for Microstructural Sciences","funders":"","keywords":"Nanowire; Silicon on insulator; Electrolyte; Materials science; Nanotechnology; Optoelectronics; Chemistry; Electrode; Silicon","score_opus":0.037011370229328974,"score_gpt":0.24587263066282847,"score_spread":0.2088612604334995,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4231179261","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.37755984,0.0052857976,0.34711903,0.008593946,0.0025501745,0.0004093589,0.010220991,0.0015714226,0.24668948],"genre_scores_gemma":[0.8670765,0.0023576482,0.020766828,0.0005990723,0.00013629191,0.0004951398,0.0019241929,0.00030378418,0.10634053],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9999254,0.000008362463,0.000002486409,0.000014693554,0.000033161323,0.00001596614],"domain_scores_gemma":[0.99992955,0.000023312385,0.0000056249373,0.000011142838,0.000023814817,0.0000065929285],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00013941736,0.00048768186,0.0006703802,0.0003533156,0.0004989281,0.00055776443,0.0018003399,0.0019185368,0.009701731],"category_scores_gemma":[0.00036774727,0.00018709537,0.00054075563,0.00039362343,0.0003267456,0.0011398216,0.0003448563,0.0005790896,0.0015212492],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00044403243,0.00016329084,0.00091456366,0.0006575395,0.00009539824,0.0009587694,0.00029472206,0.65242916,0.1577592,0.15628882,0.015548276,0.014446229],"study_design_scores_gemma":[0.000020441395,0.000037591493,0.00025768156,0.00002279687,0.000011616618,0.000052982687,0.00003578839,0.97946143,0.0044271075,0.010263834,0.005392141,0.000016692551],"about_ca_topic_score_codex":0.0060026115,"about_ca_topic_score_gemma":0.006218684,"teacher_disagreement_score":0.009701731,"about_ca_system_score_codex":0.0008763595,"about_ca_system_score_gemma":0.0005202866,"threshold_uncertainty_score":0.032455504},"labels":[],"label_agreement":null},{"id":"W4231885466","doi":"10.1149/ma2005-02/26/950","title":"Low Cell Voltage Unit Cell Models","year":2006,"lang":"en","type":"article","venue":"ECS Meeting Abstracts","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of British Columbia; Simon Fraser University","funders":"","keywords":"Unit (ring theory); Cell; Biology; Psychology; Genetics","score_opus":0.01607619381338089,"score_gpt":0.21008609919085294,"score_spread":0.19400990537747206,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4231885466","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.035274226,0.002751634,0.60969305,0.0011136878,0.0009493517,0.00029554285,0.016186273,0.0019995456,0.33173674],"genre_scores_gemma":[0.64244324,0.0022038908,0.0754321,0.00044632895,0.00019291085,0.0007384507,0.013815558,0.00091834465,0.26380926],"study_design_codex":"theoretical_or_conceptual","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99987984,0.000017795626,0.000004299401,0.000017366887,0.000059947397,0.00002069136],"domain_scores_gemma":[0.99973553,0.00005036102,0.00001952395,0.000058915517,0.0001170259,0.000018580113],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00012994977,0.00050012534,0.000533145,0.00049888244,0.00033491084,0.0011124389,0.0026013486,0.0010127149,0.05308431],"category_scores_gemma":[0.00089711446,0.00018753027,0.0004992069,0.0008542707,0.00021189102,0.0014480656,0.00037655243,0.0007664239,0.017281111],"study_design_candidate":"simulation_or_modeling","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00017969823,0.00009448547,0.0005530372,0.00037460448,0.000052022722,0.0002506725,0.00008985987,0.37130877,0.02175759,0.49021047,0.057852335,0.057276472],"study_design_scores_gemma":[0.00004337505,0.00005992782,0.00021970623,0.00003935826,0.000026196634,0.0001264131,0.00003094405,0.8369792,0.008897483,0.08019396,0.07336031,0.000023130006],"about_ca_topic_score_codex":0.003360831,"about_ca_topic_score_gemma":0.0033966945,"teacher_disagreement_score":0.05308431,"about_ca_system_score_codex":0.0005517582,"about_ca_system_score_gemma":0.00034023044,"threshold_uncertainty_score":0.17758471},"labels":[],"label_agreement":null},{"id":"W4234848882","doi":"10.36227/techrxiv.14055053.v1","title":"Compact and Low-Power Under-Voltage Lockout and Thermal-Shutdown Protection Circuits Using a Novel Low-IQ All-in-One Bandgap Comparator","year":2021,"lang":"en","type":"preprint","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"École de Technologie Supérieure; Université du Québec à Montréal","funders":"Natural Sciences and Engineering Research Council of Canada; CMC Microsystems","keywords":"Comparator; Bandgap voltage reference; Electronic circuit; Biasing; Voltage; Power (physics); Electronic engineering; CMOS; Electrical engineering; Transistor; Low voltage; Computer science; Materials science; Engineering; Voltage reference; Physics; Dropout voltage","score_opus":0.09214027525528835,"score_gpt":0.2831435056978467,"score_spread":0.19100323044255835,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4234848882","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.14504471,0.0036737064,0.8334683,0.0003927936,0.0005566391,0.00021602258,0.00022300104,0.0037620238,0.012662754],"genre_scores_gemma":[0.84769577,0.00041328065,0.14746247,0.0002888247,0.00013368671,0.00007793424,0.00014017892,0.00010722266,0.0036806753],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99945,0.000060293536,0.000042149157,0.00013678822,0.00026770728,0.000043008517],"domain_scores_gemma":[0.999532,0.00011860184,0.000108299966,0.0000921977,0.00012305852,0.000025803129],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00033564327,0.00032538865,0.00039623887,0.0006159932,0.00029844348,0.0009585612,0.001674637,0.00060884486,0.0017983152],"category_scores_gemma":[0.000695146,0.00023218818,0.00020561376,0.0003884762,0.00025556842,0.0012203419,0.0005181412,0.0005025877,0.0003485097],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0007812224,0.00013969454,0.0014017129,0.0005210214,0.000068808964,0.00037303352,0.00019045876,0.0056745694,0.7336751,0.012265589,0.002547428,0.24236129],"study_design_scores_gemma":[0.00019827862,0.0015635748,0.002501566,0.000075312135,0.00014357346,0.0027055084,0.0000734855,0.11487661,0.8392165,0.0034726495,0.035081584,0.00009134008],"about_ca_topic_score_codex":0.00020547284,"about_ca_topic_score_gemma":0.00039786837,"teacher_disagreement_score":0.0017983152,"about_ca_system_score_codex":0.00039804113,"about_ca_system_score_gemma":0.00038504126,"threshold_uncertainty_score":0.006015897},"labels":[],"label_agreement":null},{"id":"W4237491555","doi":"10.46586/tches.v2018.i2.298-336","title":"Smashing the Implementation Records of AES S-box","year":2018,"lang":"en","type":"article","venue":"IACR Transactions on Cryptographic Hardware and Embedded Systems","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":40,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Western University","funders":"Natural Sciences and Engineering Research Council of Canada; CMC Microsystems","keywords":"S-box; Heuristics; Computer science; White box; Block (permutation group theory); Box model; Logic gate; Minification; Black box; Algorithm; Computer engineering; Mathematics; Block cipher; Programming language; Cryptography; Operating system; Software engineering; Artificial intelligence","score_opus":0.017342701531045994,"score_gpt":0.2665342913171062,"score_spread":0.2491915897860602,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4237491555","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.5832498,0.0055749645,0.34019148,0.0029907112,0.00058016495,0.00021345592,0.0009003227,0.0048084315,0.061490636],"genre_scores_gemma":[0.830809,0.001996332,0.14707348,0.0004886899,0.000097851946,0.0001464587,0.0014044925,0.00075837167,0.017225275],"study_design_codex":"design_other","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9981205,0.00031190205,0.00016687687,0.00022483915,0.0009931289,0.00018258893],"domain_scores_gemma":[0.9970657,0.0010606771,0.00023466251,0.00088234793,0.0007016714,0.000055043234],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0011591458,0.0005505835,0.00033578827,0.00067072816,0.00044124093,0.00090899924,0.0008925446,0.00039711467,0.0072708135],"category_scores_gemma":[0.005054828,0.00042595156,0.0005757174,0.0006008195,0.00050291885,0.0024651869,0.0005110082,0.001109659,0.0011730917],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0020096842,0.00014141371,0.008230116,0.0013531451,0.00018150383,0.0007117366,0.0005066765,0.094210826,0.19556516,0.15556197,0.022094786,0.5194329],"study_design_scores_gemma":[0.00035889816,0.0024028977,0.006405454,0.00034962074,0.00040644567,0.0017453501,0.00036104428,0.20924312,0.5123812,0.0356193,0.230568,0.0001585976],"about_ca_topic_score_codex":0.0017712412,"about_ca_topic_score_gemma":0.002674065,"teacher_disagreement_score":0.0072708135,"about_ca_system_score_codex":0.0012165246,"about_ca_system_score_gemma":0.0012797931,"threshold_uncertainty_score":0.024323285},"labels":[],"label_agreement":null},{"id":"W4239075919","doi":"10.22215/etd/2018-13308","title":"Charge-Steering Latches","year":2018,"lang":"en","type":"dissertation","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Carleton University","funders":"","keywords":"CMOS; Transceiver; Network topology; Electronic engineering; Transient (computer programming); Wireline; Topology (electrical circuits); Engineering; Electronic circuit; Charge (physics); Electrical engineering; Computer science; Physics; Telecommunications","score_opus":0.014434034363061638,"score_gpt":0.23886077148267415,"score_spread":0.2244267371196125,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4239075919","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.051232375,0.0018038835,0.90188897,0.00040764734,0.00031665404,0.00023880826,0.0002855891,0.001717096,0.042109057],"genre_scores_gemma":[0.80408823,0.0014932221,0.15221526,0.00058128976,0.00012385512,0.00023606521,0.0002530107,0.00019809723,0.04081098],"study_design_codex":"theoretical_or_conceptual","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9997043,0.00003636364,0.000020252524,0.00005423698,0.00014602984,0.000038801143],"domain_scores_gemma":[0.99968326,0.00007662614,0.000049915056,0.00004216277,0.00013691348,0.000011075697],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00027560082,0.00035131752,0.00026906453,0.00035488416,0.00034071004,0.0009439083,0.00087729277,0.0006224488,0.0066823093],"category_scores_gemma":[0.00067107216,0.00021639462,0.00033149947,0.00034622094,0.00035688115,0.0013334505,0.00038771756,0.00042191142,0.0010724105],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0003822221,0.000082941726,0.0014330642,0.00072913826,0.000079258956,0.00051110977,0.00037508307,0.18002242,0.25585744,0.36765638,0.008663431,0.18420756],"study_design_scores_gemma":[0.00007209395,0.0005641468,0.00068459957,0.00012683544,0.00008564193,0.0009125169,0.00011850074,0.7080831,0.16269566,0.04416229,0.08242037,0.000074189324],"about_ca_topic_score_codex":0.00076614565,"about_ca_topic_score_gemma":0.0014187496,"teacher_disagreement_score":0.0066823093,"about_ca_system_score_codex":0.0007665104,"about_ca_system_score_gemma":0.00054404495,"threshold_uncertainty_score":0.022354543},"labels":[],"label_agreement":null},{"id":"W4239309858","doi":"10.1149/ma2008-02/37/2416","title":"Recent Progress and Challenges in Enabling Embedded Si:C Technology","year":2008,"lang":"en","type":"article","venue":"ECS Meeting Abstracts","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Advanced Micro Devices (Canada)","funders":"","keywords":"Materials science; Nanotechnology; Computer science; Engineering physics; Engineering","score_opus":0.05477008538414073,"score_gpt":0.2566620070574684,"score_spread":0.20189192167332765,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4239309858","genre_codex":"review","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.2028912,0.47982392,0.07411224,0.024943396,0.003157772,0.00022374323,0.0011029987,0.0017966996,0.21194805],"genre_scores_gemma":[0.62716466,0.29345253,0.04856625,0.0022675847,0.0008700889,0.00013754678,0.0013422342,0.00015505693,0.026044097],"study_design_codex":"design_other","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99971384,0.000026902258,0.000017218725,0.000051797233,0.00012194456,0.00006837561],"domain_scores_gemma":[0.9992505,0.0003041416,0.00004560013,0.000049619084,0.0002847859,0.00006527508],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0011832617,0.00041170936,0.00028532228,0.00035148783,0.00038974837,0.0018265663,0.00079488603,0.0012428074,0.007325569],"category_scores_gemma":[0.0015773088,0.00016492385,0.00017721816,0.0010423418,0.0005796432,0.0025252409,0.0007324754,0.0006826701,0.0016112354],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000587945,0.00021999358,0.003424822,0.0061491802,0.00008195182,0.0005949736,0.00043530573,0.009248232,0.17952898,0.10440388,0.046410743,0.64891404],"study_design_scores_gemma":[0.0000758658,0.0012814339,0.003833556,0.0010998118,0.000104329105,0.0015367933,0.0011812779,0.021356914,0.1730236,0.02396596,0.772458,0.00008245331],"about_ca_topic_score_codex":0.0019989288,"about_ca_topic_score_gemma":0.0037848407,"teacher_disagreement_score":0.007325569,"about_ca_system_score_codex":0.0006262345,"about_ca_system_score_gemma":0.0016112829,"threshold_uncertainty_score":0.02450645},"labels":[],"label_agreement":null},{"id":"W4239374522","doi":"10.1109/ihtc.2014.7147567","title":"Keynote speakers","year":2014,"lang":"en","type":"article","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McMaster University; University of Waterloo","funders":"UNICEF; Alexander von Humboldt-Stiftung; National Aeronautics and Space Administration","keywords":"Computer science; Speech recognition","score_opus":0.0049948967148357205,"score_gpt":0.1735597966976203,"score_spread":0.1685648999827846,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4239374522","genre_codex":"editorial","genre_gemma":"other","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"other","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.0017065522,0.010728282,0.0029196225,0.14123717,0.4504953,0.00055360276,0.00436438,0.0011201197,0.38687497],"genre_scores_gemma":[0.010462937,0.0049306187,0.0011007859,0.026330348,0.068923965,0.00035998842,0.0023195236,0.00046659703,0.88510513],"study_design_codex":"not_applicable","study_design_gemma":"not_applicable","domain_scores_codex":[0.9989681,0.00012520095,0.000054231168,0.00020017666,0.00048138268,0.0001709909],"domain_scores_gemma":[0.9942508,0.0007406955,0.00014741145,0.00017016931,0.0029080834,0.0017827726],"candidate_categories":["insufficient_payload"],"consensus_categories":["insufficient_payload"],"category_scores_codex":[0.0017412928,0.0008274887,0.00077994744,0.0010079363,0.0018199274,0.0035485667,0.001225732,0.0023527236,0.47288686],"category_scores_gemma":[0.009502268,0.0002148269,0.0004289117,0.0007243424,0.00032629762,0.0020655596,0.0020914136,0.003471207,0.27105695],"study_design_candidate":"not_applicable","study_design_consensus":"not_applicable","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000041292315,0.000012735649,0.00004601275,0.00003930975,0.0000011951165,0.000039481747,0.00003083049,0.000015363297,0.0001268062,0.001235065,0.9814548,0.016957078],"study_design_scores_gemma":[0.000011821466,0.0000136120825,0.00021552546,0.00005202998,0.0000024746125,0.00008713582,0.00011697427,0.000042190248,0.0000982878,0.0008903862,0.9984648,0.000004718273],"about_ca_topic_score_codex":0.0012628182,"about_ca_topic_score_gemma":0.0021363583,"teacher_disagreement_score":0.52711314,"about_ca_system_score_codex":0.0015146955,"about_ca_system_score_gemma":0.0019823397,"threshold_uncertainty_score":0.7518629},"labels":[],"label_agreement":null},{"id":"W4241514372","doi":"10.35940/ijitee.b1070.1292s19","title":"Modelling and Simulation of Tri-layered (s-Si/s-SiGe/s-Si) Channel Double Gate Nano FET","year":2019,"lang":"en","type":"article","venue":"International Journal of Innovative Technology and Exploring Engineering","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Alberta; University of Waterloo","funders":"","keywords":"Materials science; Optoelectronics; Miniaturization; Transistor; MOSFET; Short-channel effect; Subthreshold slope; Field-effect transistor; Subthreshold conduction; Silicon; Threshold voltage; Gate oxide; Drain-induced barrier lowering; Reverse short-channel effect; Electron mobility; Channel (broadcasting); Leakage (economics); Electrical engineering; Nanotechnology; Voltage; Engineering","score_opus":0.043842667606344504,"score_gpt":0.2576198883788428,"score_spread":0.2137772207724983,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4241514372","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.8876394,0.0012897357,0.05655284,0.00088326127,0.0001809025,0.00010561987,0.0014414741,0.00056175905,0.051345],"genre_scores_gemma":[0.98683065,0.00028827408,0.005518432,0.000054715427,0.0000136015615,0.00010168439,0.00028925197,0.00003732211,0.006865981],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99991405,0.000011674484,0.0000033629633,0.000012455758,0.000028011134,0.000030483552],"domain_scores_gemma":[0.9998573,0.000060117854,0.000018637324,0.000009604428,0.000036181806,0.000018084942],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00013342942,0.00035775712,0.0005223901,0.00025960463,0.00043081102,0.00065874297,0.0008687322,0.0013764754,0.0028429895],"category_scores_gemma":[0.00039749756,0.0003171905,0.0005900009,0.0003471859,0.00033920442,0.000544315,0.00029918647,0.00034426883,0.00028284514],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000042653857,0.000029035133,0.0010216903,0.00006471349,0.000021094942,0.00018342616,0.00005032241,0.9900519,0.00523437,0.0016047108,0.00043562695,0.0012604106],"study_design_scores_gemma":[0.000006025171,0.000017566339,0.00026083854,0.0000043667865,0.0000038781704,0.000011078973,0.000015686965,0.9985619,0.0005553012,0.00018990348,0.00036955313,0.0000038134162],"about_ca_topic_score_codex":0.016157154,"about_ca_topic_score_gemma":0.013546281,"teacher_disagreement_score":0.016157154,"about_ca_system_score_codex":0.0008503761,"about_ca_system_score_gemma":0.00094005855,"threshold_uncertainty_score":0.03212619},"labels":[],"label_agreement":null},{"id":"W4242339496","doi":"10.32920/ryerson.14657712.v1","title":"Development of an Electrothermal Simulation Tool for Integrated Circuits","year":2021,"lang":"en","type":"preprint","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":8,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Toronto Metropolitan University; Public Health Ontario","funders":"","keywords":"Bipolar junction transistor; Electronic circuit simulation; Electronic circuit; Amplifier; Junction temperature; Steady state (chemistry); Transient (computer programming); Resistor; Electronic engineering; Integrated circuit; Equivalent circuit; Voltage; Thermal; Computer science; Transistor; Electrical engineering; Engineering; CMOS","score_opus":0.03493904065298798,"score_gpt":0.28448335094566407,"score_spread":0.2495443102926761,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4242339496","genre_codex":"methods","genre_gemma":"methods","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"methods","genre_consensus":"methods","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.004644532,0.00010360046,0.9818346,0.000085331325,0.000056063083,0.000121744255,0.00037199652,0.00858097,0.0042011524],"genre_scores_gemma":[0.117203936,0.0005647041,0.8659913,0.00015586962,0.000036752044,0.001244763,0.0016427607,0.0025819025,0.010578029],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9995059,0.00008835222,0.00003831414,0.00005049872,0.00027867104,0.000038221227],"domain_scores_gemma":[0.9994282,0.00024899674,0.000030425188,0.00007752742,0.00019696436,0.000017918619],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0007851787,0.00102171,0.0007436844,0.0005857867,0.00042935723,0.0009002918,0.002226891,0.0010829128,0.008294818],"category_scores_gemma":[0.0017818935,0.0008676626,0.0009993998,0.00048211365,0.00026898016,0.001150014,0.00078871637,0.0015849817,0.0020051445],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00014426534,0.00017264822,0.0011005405,0.0005215857,0.00012533502,0.00033703606,0.00024991395,0.7775494,0.040790427,0.035642706,0.012961242,0.13040492],"study_design_scores_gemma":[0.000033610635,0.000031273958,0.00009809703,0.00003685816,0.000014669697,0.00006570685,0.0000115880075,0.963804,0.011345327,0.0031225833,0.021420263,0.000015998909],"about_ca_topic_score_codex":0.0017554249,"about_ca_topic_score_gemma":0.0014059225,"teacher_disagreement_score":0.008294818,"about_ca_system_score_codex":0.0006370992,"about_ca_system_score_gemma":0.0010189596,"threshold_uncertainty_score":0.027748942},"labels":[],"label_agreement":null},{"id":"W4247041509","doi":"10.1109/icicdt.2019.8790867","title":"Table of contents","year":2019,"lang":"en","type":"article","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Université de Sherbrooke","funders":"","keywords":"Table (database); Computer science; Database","score_opus":0.014046527043193088,"score_gpt":0.21145889990507666,"score_spread":0.19741237286188357,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4247041509","genre_codex":"other","genre_gemma":"other","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"other","genre_consensus":"other","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.00056817377,0.0054242876,0.00253767,0.005009683,0.01758899,0.0003775383,0.01276776,0.0018192608,0.9539067],"genre_scores_gemma":[0.0021019354,0.004204065,0.0012678951,0.0026158746,0.004486909,0.00015009037,0.009973976,0.00057260896,0.97462666],"study_design_codex":"not_applicable","study_design_gemma":"not_applicable","domain_scores_codex":[0.9995029,0.000053405627,0.000033056996,0.00010340666,0.00026285715,0.000044465145],"domain_scores_gemma":[0.9974763,0.00036596175,0.00012054852,0.0002111238,0.0014074107,0.00041867266],"candidate_categories":["insufficient_payload"],"consensus_categories":["insufficient_payload"],"category_scores_codex":[0.0004748176,0.0007841902,0.00088134204,0.002899654,0.0012892988,0.003815362,0.0012156559,0.0010134166,0.8137921],"category_scores_gemma":[0.0053781588,0.0002686813,0.00041085092,0.0024366584,0.00032928138,0.0022823752,0.0016004635,0.0012655575,0.76192534],"study_design_candidate":"not_applicable","study_design_consensus":"not_applicable","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000014005612,0.000022980672,0.00013288471,0.00017741542,0.0000027038586,0.000028462067,0.0000208971,0.000073223026,0.00022095692,0.0019116858,0.93056923,0.06682565],"study_design_scores_gemma":[0.000002157515,0.000009793307,0.0001788433,0.00010962153,0.0000018132994,0.0000533318,0.000019993002,0.000026635646,0.000059731014,0.0005903285,0.99894506,0.0000027064139],"about_ca_topic_score_codex":0.0018224457,"about_ca_topic_score_gemma":0.0021504068,"teacher_disagreement_score":0.18620789,"about_ca_system_score_codex":0.0011445715,"about_ca_system_score_gemma":0.0018590029,"threshold_uncertainty_score":0.2656029},"labels":[],"label_agreement":null},{"id":"W4247373004","doi":"10.36227/techrxiv.14055053","title":"Compact and Low-Power Under-Voltage Lockout and Thermal-Shutdown Protection Circuits Using a Novel Low-IQ All-in-One Bandgap Comparator","year":2021,"lang":"en","type":"preprint","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"École de Technologie Supérieure; Université du Québec à Montréal","funders":"Natural Sciences and Engineering Research Council of Canada; CMC Microsystems","keywords":"Comparator; Bandgap voltage reference; Electronic circuit; Biasing; Voltage; Power (physics); Electronic engineering; Transistor; Electrical engineering; Materials science; Computer science; Voltage reference; Engineering; Physics; Dropout voltage","score_opus":0.09214027525528835,"score_gpt":0.2831435056978467,"score_spread":0.19100323044255835,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4247373004","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.15929511,0.0040898332,0.8183869,0.0004337506,0.0005798363,0.00022086436,0.00023379082,0.0037917863,0.01296813],"genre_scores_gemma":[0.838287,0.0004609074,0.1567749,0.0003102472,0.00013821699,0.00007156447,0.00013459967,0.00010457072,0.0037180418],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9994849,0.000058091136,0.000038770362,0.00013160474,0.0002452457,0.000041492513],"domain_scores_gemma":[0.9994729,0.0001331433,0.00011902857,0.00010738086,0.00013784885,0.000029695399],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00032918973,0.00030426212,0.00040125684,0.0005732302,0.0003114859,0.000916442,0.0016841752,0.0006115906,0.0019350639],"category_scores_gemma":[0.0006647729,0.00022036524,0.00021808209,0.00041016936,0.0002865668,0.0013197793,0.00054837286,0.00054426154,0.00038798232],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0007753351,0.00013282508,0.0014562428,0.0005152644,0.00007203402,0.00034430428,0.00018238596,0.0050260713,0.7109365,0.011481277,0.0026737468,0.2664042],"study_design_scores_gemma":[0.0001903898,0.0017703354,0.0028028183,0.000072921626,0.00016043363,0.0027224019,0.00008600031,0.10262753,0.8470199,0.0033692764,0.039089695,0.0000882904],"about_ca_topic_score_codex":0.00020388875,"about_ca_topic_score_gemma":0.00041736529,"teacher_disagreement_score":0.0019350639,"about_ca_system_score_codex":0.0004162506,"about_ca_system_score_gemma":0.0003539977,"threshold_uncertainty_score":0.006473422},"labels":[],"label_agreement":null},{"id":"W4248218046","doi":"10.1088/1757-899x/585/1/011003","title":"Committee List","year":2019,"lang":"en","type":"article","venue":"IOP Conference Series Materials Science and Engineering","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":true,"ca_institutions":"","funders":"","keywords":"China; Library science; Political science; Law","score_opus":0.014273435518512024,"score_gpt":0.20993621767644183,"score_spread":0.19566278215792982,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4248218046","genre_codex":"other","genre_gemma":"other","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"other","genre_consensus":"other","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.00085066,0.007833535,0.007760049,0.041847806,0.11798392,0.0026867802,0.011379349,0.003295034,0.8063629],"genre_scores_gemma":[0.003615678,0.0057350253,0.0023634364,0.009004286,0.020150412,0.0014024988,0.008974888,0.0012751303,0.9474786],"study_design_codex":"not_applicable","study_design_gemma":"not_applicable","domain_scores_codex":[0.9960645,0.0005963086,0.00035912913,0.00058200874,0.0018340434,0.0005640985],"domain_scores_gemma":[0.9804114,0.00096703245,0.0006296427,0.0013563517,0.011775072,0.0048605073],"candidate_categories":["insufficient_payload"],"consensus_categories":["insufficient_payload"],"category_scores_codex":[0.0045098313,0.0016776202,0.001622234,0.0029963339,0.0026940014,0.009169627,0.0026379996,0.0039333813,0.7109719],"category_scores_gemma":[0.018922422,0.0004892724,0.0013607511,0.0029132515,0.0007241423,0.0034951034,0.0028910418,0.0032485903,0.7341546],"study_design_candidate":"not_applicable","study_design_consensus":"not_applicable","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000025728443,0.00001686825,0.00007519158,0.00013059043,0.0000033762053,0.000029766124,0.000014604604,0.000049887974,0.00015603729,0.0011775843,0.9590261,0.0392943],"study_design_scores_gemma":[0.000004804941,0.000008740244,0.00012986085,0.00009883194,0.0000016732366,0.000038764276,0.000024713168,0.00004087742,0.00008414421,0.00039592406,0.99916697,0.0000048189145],"about_ca_topic_score_codex":0.0015673715,"about_ca_topic_score_gemma":0.0023757888,"teacher_disagreement_score":0.2890281,"about_ca_system_score_codex":0.0023429561,"about_ca_system_score_gemma":0.0057298364,"threshold_uncertainty_score":0.4122635},"labels":[],"label_agreement":null},{"id":"W4248605976","doi":"10.1017/cbo9780511840685.005","title":"Thermal equilibrium","year":2010,"lang":"en","type":"book-chapter","venue":"Cambridge University Press eBooks","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of British Columbia","funders":"","keywords":"Thermal equilibrium; Thermal; Thermodynamic equilibrium; Semiconductor; Materials science; Steady state (chemistry); Thermodynamics; Mechanics; Optoelectronics; Physics; Chemistry; Physical chemistry","score_opus":0.019840620163375833,"score_gpt":0.18849215319679452,"score_spread":0.16865153303341868,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4248605976","genre_codex":"other","genre_gemma":"other","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"other","genre_consensus":"other","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.0015305086,0.022522816,0.030037176,0.0017908881,0.0016373377,0.00008326942,0.00027522852,0.0005528838,0.94156986],"genre_scores_gemma":[0.046360858,0.025357964,0.018349798,0.0023862624,0.0009248596,0.00020124155,0.00051311654,0.0008109463,0.90509504],"study_design_codex":"theoretical_or_conceptual","study_design_gemma":"not_applicable","domain_scores_codex":[0.99944705,0.00006982569,0.00002574244,0.00017141369,0.00021760544,0.00006846266],"domain_scores_gemma":[0.99978644,0.00005199759,0.000013234251,0.000044711927,0.000084887826,0.000018758932],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00043780095,0.0010338805,0.00072671805,0.0010853921,0.0017066484,0.0032514527,0.0012827361,0.0016300622,0.06161689],"category_scores_gemma":[0.00080702204,0.00043085744,0.00060470385,0.0009259745,0.0027380264,0.004609509,0.002054116,0.0022712639,0.03514737],"study_design_candidate":"not_applicable","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000023983037,0.000031319658,0.00007720349,0.0004860898,0.000011418977,0.000118914395,0.0008145501,0.0008824597,0.0030120052,0.8008915,0.09377055,0.09988],"study_design_scores_gemma":[0.000002963984,0.000012462237,0.000054867265,0.00011818654,0.000003796235,0.00021172964,0.00006291499,0.00020517842,0.0010767649,0.08722524,0.91101676,0.0000091258125],"about_ca_topic_score_codex":0.0009874061,"about_ca_topic_score_gemma":0.0013000644,"teacher_disagreement_score":0.06161689,"about_ca_system_score_codex":0.0020879244,"about_ca_system_score_gemma":0.0011772498,"threshold_uncertainty_score":0.20612907},"labels":[],"label_agreement":null},{"id":"W4249721290","doi":"10.1149/ma2020-01241390mtgabs","title":"Readout Circuit Design Using Experimental Data of Line-TFET Devices","year":2020,"lang":"en","type":"article","venue":"ECS Meeting Abstracts","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Toronto","funders":"","keywords":"Amplifier; Electrical engineering; Computer science; Circuit design; Electronic engineering; Electronic circuit; Capacitor; Bandwidth (computing); Transistor; Engineering; Voltage; CMOS; Telecommunications","score_opus":0.18062073514365426,"score_gpt":0.3132563634645133,"score_spread":0.13263562832085904,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4249721290","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.19673556,0.0024002783,0.76228994,0.0013071137,0.0014573885,0.0023239194,0.004781059,0.0057198433,0.02298495],"genre_scores_gemma":[0.680708,0.0013381211,0.30040285,0.0005615749,0.00025368994,0.0016345452,0.0022532633,0.00057142216,0.012276491],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99924624,0.00007261529,0.000060776925,0.00022721282,0.00033675865,0.000056487075],"domain_scores_gemma":[0.9991153,0.0002356918,0.00008004348,0.00013052906,0.00041244464,0.00002601423],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0008952833,0.0006813396,0.0004321581,0.00052354386,0.0004754279,0.0010661738,0.0020888925,0.0010628145,0.011408165],"category_scores_gemma":[0.0019120778,0.0002952908,0.00035534237,0.0005658271,0.0004115147,0.0014650319,0.00037529456,0.0007894548,0.0028398198],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00038738674,0.0002045208,0.0011306313,0.0010612864,0.000059679907,0.00032204753,0.00021114563,0.0023122053,0.92572755,0.0052454905,0.0046651866,0.058672883],"study_design_scores_gemma":[0.000060952432,0.00080795004,0.0011005433,0.000052728814,0.00004770889,0.00032515483,0.000046840854,0.015650934,0.95380366,0.00071617856,0.027359147,0.000028111683],"about_ca_topic_score_codex":0.00030819024,"about_ca_topic_score_gemma":0.0003619929,"teacher_disagreement_score":0.011408165,"about_ca_system_score_codex":0.00084600726,"about_ca_system_score_gemma":0.00031824035,"threshold_uncertainty_score":0.03816414},"labels":[],"label_agreement":null},{"id":"W4253232140","doi":"10.32920/ryerson.14657712","title":"Development of an Electrothermal Simulation Tool for Integrated Circuits","year":2021,"lang":"en","type":"preprint","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":8,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Toronto Metropolitan University; Public Health Ontario","funders":"","keywords":"Bipolar junction transistor; Electronic circuit simulation; Electronic circuit; Junction temperature; Amplifier; Steady state (chemistry); Resistor; Transient (computer programming); Integrated circuit; Electronic engineering; Equivalent circuit; Voltage; Computer science; Transistor; Thermal; Electrical engineering; Engineering; CMOS","score_opus":0.03493904065298798,"score_gpt":0.28448335094566407,"score_spread":0.2495443102926761,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4253232140","genre_codex":"methods","genre_gemma":"methods","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"methods","genre_consensus":"methods","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.004644532,0.00010360046,0.9818346,0.000085331325,0.000056063083,0.000121744255,0.00037199652,0.00858097,0.0042011524],"genre_scores_gemma":[0.117203936,0.0005647041,0.8659913,0.00015586962,0.000036752044,0.001244763,0.0016427607,0.0025819025,0.010578029],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9995059,0.00008835222,0.00003831414,0.00005049872,0.00027867104,0.000038221227],"domain_scores_gemma":[0.9994282,0.00024899674,0.000030425188,0.00007752742,0.00019696436,0.000017918619],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0007851787,0.00102171,0.0007436844,0.0005857867,0.00042935723,0.0009002918,0.002226891,0.0010829128,0.008294818],"category_scores_gemma":[0.0017818935,0.0008676626,0.0009993998,0.00048211365,0.00026898016,0.001150014,0.00078871637,0.0015849817,0.0020051445],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00014426534,0.00017264822,0.0011005405,0.0005215857,0.00012533502,0.00033703606,0.00024991395,0.7775494,0.040790427,0.035642706,0.012961242,0.13040492],"study_design_scores_gemma":[0.000033610635,0.000031273958,0.00009809703,0.00003685816,0.000014669697,0.00006570685,0.0000115880075,0.963804,0.011345327,0.0031225833,0.021420263,0.000015998909],"about_ca_topic_score_codex":0.0017554249,"about_ca_topic_score_gemma":0.0014059225,"teacher_disagreement_score":0.008294818,"about_ca_system_score_codex":0.0006370992,"about_ca_system_score_gemma":0.0010189596,"threshold_uncertainty_score":0.027748942},"labels":[],"label_agreement":null},{"id":"W4255326350","doi":"10.1002/9781119450986.ch8","title":"Junction Transistors","year":2018,"lang":"en","type":"other","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McMaster University","funders":"","keywords":"JFET; Bipolar junction transistor; Transistor; Optoelectronics; Saturation current; Electrical engineering; Materials science; Electronics; Field-effect transistor; Insulated-gate bipolar transistor; p–n junction; Engineering; Voltage; Semiconductor","score_opus":0.009757408738512207,"score_gpt":0.20210824010418993,"score_spread":0.1923508313656777,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4255326350","genre_codex":"other","genre_gemma":"other","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"other","genre_consensus":"other","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.012277488,0.103844255,0.07808664,0.003448423,0.013100302,0.0004897256,0.005502042,0.004164433,0.77908665],"genre_scores_gemma":[0.13740313,0.10645489,0.08829164,0.0043689166,0.0020595463,0.00083157496,0.009135804,0.0013841533,0.6500703],"study_design_codex":"not_applicable","study_design_gemma":"not_applicable","domain_scores_codex":[0.99948597,0.000025769308,0.000026563594,0.00008826826,0.00030862846,0.00006475766],"domain_scores_gemma":[0.9998579,0.000019649875,0.000012309812,0.000019351042,0.00007438621,0.00001644226],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00020767012,0.00064529275,0.00073013245,0.00089625077,0.0010577061,0.001803103,0.0016894115,0.0013803941,0.04782075],"category_scores_gemma":[0.00059446803,0.00037743224,0.0005466439,0.0011719218,0.0003237277,0.0016925886,0.0011301839,0.0012075278,0.03316882],"study_design_candidate":"not_applicable","study_design_consensus":"not_applicable","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00013342263,0.00017561908,0.00033725583,0.002169718,0.000053337983,0.0007263418,0.0004486763,0.0020938483,0.099505775,0.18362172,0.3751319,0.3356023],"study_design_scores_gemma":[0.0000062524805,0.00004068103,0.00008457875,0.00010335497,0.000009764416,0.00046703927,0.00003506523,0.00058041775,0.010796104,0.0054890467,0.98237246,0.000015324811],"about_ca_topic_score_codex":0.00048174203,"about_ca_topic_score_gemma":0.00096971454,"teacher_disagreement_score":0.04782075,"about_ca_system_score_codex":0.0007833966,"about_ca_system_score_gemma":0.0003617671,"threshold_uncertainty_score":0.15997636},"labels":[],"label_agreement":null},{"id":"W4255573177","doi":"10.1149/ma2014-02/35/1846","title":"In Situ Studies of Germanium-Tin and Silicon-Germanium-Tin Thermal Stability","year":2014,"lang":"en","type":"article","venue":"ECS Meeting Abstracts","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Université de Montréal; Polytechnique Montréal","funders":"","keywords":"Materials science; Optoelectronics; Semiconductor; Germanium; Photonics; Heterojunction; Photovoltaics; Silicon; Band gap; Tin; Silicon photonics; Nanotechnology; Photovoltaic system; Electrical engineering","score_opus":0.029074805043639365,"score_gpt":0.2644922625684845,"score_spread":0.23541745752484516,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4255573177","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9960633,0.00068010844,0.0013451739,0.000025049918,0.000012355457,0.000008892769,0.00025582933,0.000027597516,0.0015817103],"genre_scores_gemma":[0.9970932,0.00033020365,0.001255796,0.000009265093,0.0000045349943,0.000009302082,0.00015234057,0.0000130260605,0.0011322701],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999114,0.0000070705696,0.0000052089235,0.000027713806,0.000028699864,0.000019863082],"domain_scores_gemma":[0.99989045,0.000037149133,0.000026012549,0.000010046402,0.00002956087,0.0000068454606],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00013795304,0.0002246827,0.00014828063,0.0002500954,0.00023696806,0.0002350883,0.00030571272,0.00029927774,0.0013560144],"category_scores_gemma":[0.0002025894,0.00018464541,0.00012657847,0.0002189386,0.00022342106,0.00021207212,0.00015142639,0.00027992047,0.0001329344],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000045597997,0.000008349681,0.00051254523,0.000036233407,0.0000084820185,0.000031914053,0.000054368873,0.00021432144,0.99813324,0.00008980632,0.000024399564,0.0008407705],"study_design_scores_gemma":[0.0000028948448,0.0000654199,0.0039223824,0.0000032954777,0.000012090887,0.000057772406,0.000054478543,0.0015184481,0.9937442,0.000020120131,0.0005948847,0.0000040574596],"about_ca_topic_score_codex":0.00148428,"about_ca_topic_score_gemma":0.002411269,"teacher_disagreement_score":0.00148428,"about_ca_system_score_codex":0.00030202168,"about_ca_system_score_gemma":0.000102014325,"threshold_uncertainty_score":0.004536271},"labels":[],"label_agreement":null},{"id":"W4285885609","doi":"","title":"Sensing performances of integrated ISFETs on 28 nm CMOS FDSOI technology","year":2020,"lang":"en","type":"preprint","venue":"HAL (Le Centre pour la Communication Scientifique Directe)","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Institut interdisciplinaire d'innovation technologique; Université de Sherbrooke","funders":"","keywords":"CMOS; Electronic engineering; Materials science; Computer science; Optoelectronics; Electrical engineering; Engineering","score_opus":0.01719666368676884,"score_gpt":0.22365151327505595,"score_spread":0.2064548495882871,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4285885609","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99217564,0.00083072286,0.002488612,0.00025458986,0.00010124837,0.000018617444,0.00036589158,0.00021363262,0.0035509914],"genre_scores_gemma":[0.9952863,0.00028685416,0.0015467792,0.000065310815,0.000030764615,0.000009866459,0.00014879911,0.00001943352,0.0026059763],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9995203,0.000033384113,0.000020388274,0.00017952849,0.00017267407,0.00007371096],"domain_scores_gemma":[0.9994221,0.00021609078,0.000102363876,0.000049960494,0.00017396084,0.000035564528],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00028644278,0.00047040675,0.00046486195,0.0003151841,0.000285011,0.00067437335,0.00081423594,0.000835904,0.0027054737],"category_scores_gemma":[0.00064646604,0.00021175691,0.00025222835,0.00039119044,0.00035593487,0.0006562121,0.0002963298,0.00024522308,0.00057101],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00070250983,0.00006812166,0.0016574361,0.00015828012,0.000041875704,0.00013930444,0.00020793447,0.0017430782,0.98715544,0.0005127244,0.0006706726,0.006942591],"study_design_scores_gemma":[0.000038474755,0.0008346953,0.0071394867,0.000032316475,0.0000840612,0.00020016606,0.00017848767,0.017824952,0.97115225,0.00022067963,0.0022710143,0.000023448887],"about_ca_topic_score_codex":0.0021642004,"about_ca_topic_score_gemma":0.003815837,"teacher_disagreement_score":0.0027054737,"about_ca_system_score_codex":0.00087155285,"about_ca_system_score_gemma":0.00031583954,"threshold_uncertainty_score":0.009050727},"labels":[],"label_agreement":null},{"id":"W4293066935","doi":"10.1063/5.0102588","title":"Electron transport with the McKelvey–Shockley flux method: The effect of electric field and electron–phonon scattering","year":2022,"lang":"en","type":"article","venue":"Journal of Applied Physics","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Dalhousie University","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Boltzmann equation; Electric field; Electron; Physics; Phonon; Scattering; Computational physics; Condensed matter physics; Boltzmann constant; Statistical physics; Quantum mechanics","score_opus":0.005156184996538181,"score_gpt":0.2266958420869247,"score_spread":0.2215396570903865,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4293066935","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.14495656,0.0016900037,0.82484096,0.0010004622,0.0004941268,0.00021814385,0.00024265696,0.00034671766,0.026210325],"genre_scores_gemma":[0.8286473,0.001010676,0.1585195,0.00034855687,0.0001059586,0.00032115218,0.00020700607,0.00016700386,0.010672708],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99981207,0.000062085586,0.0000089658415,0.000018569135,0.000069650036,0.000028808727],"domain_scores_gemma":[0.9997694,0.0001223019,0.000022275255,0.000022471766,0.000042808133,0.000020718791],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000667672,0.0006831966,0.00058584055,0.00050055055,0.00073561945,0.00079068536,0.0011109117,0.0016270494,0.0021665215],"category_scores_gemma":[0.0011204515,0.00024617204,0.00065907766,0.0004356914,0.0007131134,0.0015617618,0.0008261344,0.0009025661,0.00023254953],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00017351705,0.00016658827,0.0015252683,0.00024555117,0.00004532605,0.00049818424,0.00026915013,0.71295667,0.03002932,0.22733587,0.0026143375,0.024140209],"study_design_scores_gemma":[0.000019071813,0.000025414623,0.00014055842,0.000013417187,0.0000034221578,0.000037369085,0.00001874711,0.9893315,0.0018883033,0.007081114,0.001428321,0.000012719065],"about_ca_topic_score_codex":0.004128675,"about_ca_topic_score_gemma":0.0029483556,"teacher_disagreement_score":0.004128675,"about_ca_system_score_codex":0.0006060113,"about_ca_system_score_gemma":0.0009678805,"threshold_uncertainty_score":0.008209288},"labels":[],"label_agreement":null},{"id":"W4293868637","doi":"10.1109/ims37962.2022.9865577","title":"Cryogenic Compact mm-Wave Broadband SPST Switch in 22nm FDSOI CMOS for Monolithic Quantum Processors","year":2022,"lang":"en","type":"article","venue":"2022 IEEE/MTT-S International Microwave Symposium - IMS 2022","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":5,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Toronto","funders":"","keywords":"CMOS; Broadband; Optoelectronics; Silicon on insulator; Materials science; Physics; Electrical engineering; Silicon; Engineering; Optics","score_opus":0.021980554349227136,"score_gpt":0.2519782881682737,"score_spread":0.2299977338190466,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4293868637","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99395955,0.0002801441,0.004006911,0.000113413946,0.000021290167,0.000016371552,0.00011063278,0.00007816228,0.0014135636],"genre_scores_gemma":[0.9952676,0.000101372396,0.0035389313,0.000020418474,0.0000105228655,0.000012680295,0.00006827827,0.000014215919,0.0009660659],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998779,0.000010171041,0.000003181747,0.000034712597,0.000051543906,0.000022402797],"domain_scores_gemma":[0.999874,0.000028592058,0.00003652501,0.00001688301,0.000029295119,0.000014745804],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00019449854,0.00021163884,0.00024023274,0.00010413624,0.00029453085,0.00027601153,0.00026917385,0.0002147237,0.0012934407],"category_scores_gemma":[0.000252884,0.00010198,0.00010517151,0.00013725304,0.00030350016,0.00047675872,0.00019647599,0.0002498678,0.00022890203],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00016844465,0.000015539847,0.00074167654,0.000041380314,0.000005603705,0.00012748114,0.00012715814,0.0006227307,0.99529284,0.00029268427,0.00019078507,0.0023736602],"study_design_scores_gemma":[0.00003922848,0.0010276353,0.011316987,0.00001475477,0.000021458198,0.0003496006,0.00020485371,0.008313585,0.97390795,0.00014256523,0.004645769,0.00001561229],"about_ca_topic_score_codex":0.001099738,"about_ca_topic_score_gemma":0.0017169334,"teacher_disagreement_score":0.0012934407,"about_ca_system_score_codex":0.000396352,"about_ca_system_score_gemma":0.00020966968,"threshold_uncertainty_score":0.004326999},"labels":[],"label_agreement":null},{"id":"W4306770861","doi":"10.18280/ejee.240407","title":"I_V Characteristic of Vertical Double Diffused Metal Oxide Semiconductor (VDMOS) Power Transistor Using Silvaco-TCAD","year":2022,"lang":"en","type":"article","venue":"European Journal of Electrical Engineering","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":false,"route_ca_venue":true,"route_about_ca":false,"ca_institutions":"","funders":"","keywords":"Transistor; MOSFET; Materials science; Optoelectronics; Power semiconductor device; Work function; Power MOSFET; Gate oxide; Electrical engineering; Voltage; Threshold voltage; Static induction transistor; Field-effect transistor; Engineering; Nanotechnology","score_opus":0.018003388774286616,"score_gpt":0.20822773218059548,"score_spread":0.19022434340630887,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4306770861","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.81199694,0.005465356,0.07220011,0.002116657,0.0005221997,0.00016221398,0.014133115,0.008070285,0.08533315],"genre_scores_gemma":[0.9837076,0.0007620755,0.007171436,0.00013575485,0.00003373429,0.00006562961,0.0013965097,0.00019688929,0.0065302276],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9997987,0.00002554055,0.000010895264,0.000039165483,0.000100140256,0.000025622816],"domain_scores_gemma":[0.9997366,0.00012557908,0.000029411263,0.000020678732,0.0000773101,0.000010374889],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00017998715,0.00053239876,0.0005645857,0.0005487886,0.00028592817,0.00048230303,0.0010508838,0.00107705,0.006311008],"category_scores_gemma":[0.00043819574,0.00020587113,0.0007025606,0.0010287846,0.00022872268,0.00049992657,0.00015718231,0.00044569146,0.0009764517],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00080027827,0.00019635541,0.008596347,0.002503577,0.00045108178,0.0032496601,0.0012837765,0.62770647,0.24935931,0.01614089,0.035505887,0.054206423],"study_design_scores_gemma":[0.000052679487,0.00070277444,0.007267683,0.00020625601,0.00013132878,0.0009715616,0.00023554052,0.9005368,0.06674345,0.00508158,0.017975586,0.00009490097],"about_ca_topic_score_codex":0.0032142727,"about_ca_topic_score_gemma":0.003576584,"teacher_disagreement_score":0.006311008,"about_ca_system_score_codex":0.00052430417,"about_ca_system_score_gemma":0.00032747156,"threshold_uncertainty_score":0.021112382},"labels":[],"label_agreement":null},{"id":"W4309811781","doi":"10.1149/ma2022-02321178mtgabs","title":"(Digital Presentation) Nanowire Transistors with Bound‐Charge Engineering","year":2022,"lang":"en","type":"article","venue":"ECS Meeting Abstracts","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McGill University","funders":"","keywords":"Nanowire; Transistor; Materials science; Charge (physics); Field-effect transistor; Bound state; Nanotechnology; Scalability; Subthreshold swing; Optoelectronics; Quantum; Electrical engineering; Physics; Computer science; Quantum mechanics; Engineering; Voltage","score_opus":0.010298150073248013,"score_gpt":0.2019589544018246,"score_spread":0.19166080432857657,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4309811781","genre_codex":"other","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.036566652,0.00758307,0.07034661,0.00913844,0.020141562,0.00029162754,0.0047857943,0.007805851,0.8433404],"genre_scores_gemma":[0.1103391,0.002043629,0.010700175,0.0017914029,0.0009788986,0.00006773958,0.0012970427,0.00029735322,0.8724846],"study_design_codex":"not_applicable","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99995947,0.0000027708465,0.0000021238109,0.000009782173,0.000018907564,0.000006922998],"domain_scores_gemma":[0.9999523,0.000009660102,0.0000025480447,0.0000072844177,0.000020855214,0.0000073733286],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000069599584,0.00030425456,0.00019884194,0.00017822933,0.00026483965,0.00078634295,0.0004742038,0.0005961819,0.20266439],"category_scores_gemma":[0.00020626273,0.00011422581,0.00024566794,0.00018414749,0.0001108049,0.0005277771,0.00030530585,0.00047884698,0.04441492],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00033450237,0.00014486267,0.00024782456,0.00039854963,0.000031324656,0.00079689745,0.00008159342,0.0016485312,0.15196605,0.022761494,0.554201,0.2673873],"study_design_scores_gemma":[0.00006821861,0.00018245575,0.00091140746,0.00008366213,0.00003690479,0.0006771229,0.000036026482,0.009985716,0.047697686,0.005464152,0.9348313,0.00002545703],"about_ca_topic_score_codex":0.00045980662,"about_ca_topic_score_gemma":0.001654128,"teacher_disagreement_score":0.20266439,"about_ca_system_score_codex":0.00027190225,"about_ca_system_score_gemma":0.00010899186,"threshold_uncertainty_score":0.67797995},"labels":[],"label_agreement":null},{"id":"W4311839535","doi":"10.1109/icfpt56656.2022.9974233","title":"Parallel CRC On An FPGA At Terabit Speeds","year":2022,"lang":"en","type":"article","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":5,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Toronto","funders":"","keywords":"Computer science; Cyclic redundancy check; Field-programmable gate array; Network packet; Redundancy (engineering); Ethernet; Parallel computing; Terabit; Reliability (semiconductor); Embedded system; Computer hardware; Computer network; Operating system","score_opus":0.025164526182429262,"score_gpt":0.2437775682875207,"score_spread":0.21861304210509144,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4311839535","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.5659704,0.0007353536,0.3246699,0.0004690517,0.00064689334,0.0004899768,0.0011103222,0.037837386,0.068070576],"genre_scores_gemma":[0.8358329,0.00017556343,0.14723599,0.00016858059,0.000055659773,0.00012132542,0.00080289505,0.00035637035,0.015250648],"study_design_codex":"design_other","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99957174,0.00003796559,0.000022401258,0.000099664736,0.00016644572,0.00010170734],"domain_scores_gemma":[0.9995939,0.00007044351,0.00003706318,0.00011061318,0.0001582662,0.000029785588],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0002676425,0.0005313825,0.000270097,0.00056271016,0.00023547573,0.000498886,0.00063257624,0.00026489064,0.007030732],"category_scores_gemma":[0.0007788523,0.00022316346,0.00016468405,0.0003326734,0.00023410837,0.0008496293,0.00029810535,0.0004701342,0.0019348531],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0022325688,0.00040253,0.0036882032,0.0006269224,0.00008830023,0.001157993,0.0003346221,0.078764096,0.41677308,0.03141989,0.03470891,0.42980292],"study_design_scores_gemma":[0.00045235,0.0017557304,0.004167818,0.00011147767,0.00010186085,0.0008699772,0.00010750948,0.41819245,0.48906812,0.0063246093,0.07874101,0.00010705888],"about_ca_topic_score_codex":0.0026137936,"about_ca_topic_score_gemma":0.0035698442,"teacher_disagreement_score":0.007030732,"about_ca_system_score_codex":0.00063485565,"about_ca_system_score_gemma":0.0008460182,"threshold_uncertainty_score":0.023520112},"labels":[],"label_agreement":null},{"id":"W4312443981","doi":"10.1109/access.2022.3226370","title":"A 7.6-ns Delay Subthreshold Level-Shifter Leveraging a Composite Transistor and a Voltage-Controlled Current Source","year":2022,"lang":"en","type":"article","venue":"IEEE Access","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":5,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Polytechnique Montréal; McGill University; CMC Microsystems (Canada)","funders":"Natural Sciences and Engineering Research Council of Canada; Mitacs; Polytechnique Montréal; Canadian Institutes of Health Research; CMC Microsystems","keywords":"Subthreshold conduction; CMOS; Electrical engineering; Capacitance; Transistor; Capacitor; Voltage; Current source; Computer science; Parasitic capacitance; Inverter; Propagation delay; Electronic engineering; Materials science; Topology (electrical circuits); Physics; Engineering","score_opus":0.050304209307188326,"score_gpt":0.2720920683027277,"score_spread":0.22178785899553938,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4312443981","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.38657862,0.0022049998,0.5936118,0.00062885706,0.00029174288,0.00020621042,0.0004490469,0.0062794886,0.009749241],"genre_scores_gemma":[0.8543466,0.00038989153,0.13818309,0.00037607396,0.0000928046,0.000042125153,0.00016133091,0.00009384341,0.0063142045],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998703,0.000010220854,0.00000770887,0.000039350736,0.0000550231,0.00001728935],"domain_scores_gemma":[0.99986196,0.000026422644,0.00003769721,0.000017511098,0.00004005617,0.000016383488],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00010192458,0.00020402973,0.00023084984,0.00025874,0.00017039086,0.0003058521,0.0009874273,0.0004575152,0.0017912963],"category_scores_gemma":[0.0001679771,0.00018262361,0.00023765408,0.00024291303,0.00013668466,0.0005469903,0.00024551994,0.00040248848,0.00057921687],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00008991976,0.000022588036,0.00023124898,0.00009529565,0.000018134564,0.0001122172,0.000033720393,0.0006187759,0.9641071,0.0011281089,0.00053849467,0.03300441],"study_design_scores_gemma":[0.000052539228,0.00090534845,0.0021124813,0.00002396697,0.00009353597,0.0012984494,0.000024044852,0.033779394,0.9417885,0.0007752398,0.019107033,0.000039410603],"about_ca_topic_score_codex":0.00033454003,"about_ca_topic_score_gemma":0.0008166544,"teacher_disagreement_score":0.0017912963,"about_ca_system_score_codex":0.00039351292,"about_ca_system_score_gemma":0.00022968664,"threshold_uncertainty_score":0.005992472},"labels":[],"label_agreement":null},{"id":"W4312656452","doi":"10.1007/978-3-031-08458-4_10","title":"Metal–Oxide–Semiconductor Field Effect Transistor (MOSFET)","year":2022,"lang":"en","type":"book-chapter","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":2,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Memorial University of Newfoundland","funders":"","keywords":"MOSFET; Channel length modulation; Materials science; Optoelectronics; Field-effect transistor; Transistor; Electrical engineering; Capacitance; Threshold voltage; Voltage; Drain-induced barrier lowering; Electrode; Engineering; Physics","score_opus":0.013984561180123846,"score_gpt":0.2116756801935702,"score_spread":0.19769111901344635,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4312656452","genre_codex":"other","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.01143515,0.0672291,0.06291846,0.002396338,0.0058863927,0.000116582196,0.0010674424,0.0010321712,0.84791833],"genre_scores_gemma":[0.07284272,0.05033061,0.04081066,0.0019692543,0.0011937624,0.000071899725,0.0009904489,0.00026688448,0.83152366],"study_design_codex":"design_other","study_design_gemma":"not_applicable","domain_scores_codex":[0.99993336,0.0000044624835,0.0000019117128,0.000014332856,0.0000381447,0.000007823109],"domain_scores_gemma":[0.99996436,0.000013196551,0.00000250434,0.0000037720008,0.000012683606,0.000003482102],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00008177884,0.0003557668,0.00027943624,0.00042037579,0.00029960406,0.00074998406,0.0006208659,0.00056677574,0.021562787],"category_scores_gemma":[0.0001416147,0.0001609606,0.00023172706,0.00072329637,0.00023489381,0.0010428707,0.00032834406,0.00068267755,0.01216966],"study_design_candidate":"not_applicable","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000069942034,0.00010369067,0.00014419066,0.0010170077,0.000027338854,0.0002558278,0.00016988191,0.0014955363,0.07657459,0.20647304,0.26888284,0.44478604],"study_design_scores_gemma":[0.0000054552825,0.000047622565,0.00020886195,0.00010420679,0.000010763823,0.00041437813,0.000028585844,0.002227505,0.011729432,0.017646434,0.96756715,0.000009534292],"about_ca_topic_score_codex":0.00051985064,"about_ca_topic_score_gemma":0.0016339606,"teacher_disagreement_score":0.021562787,"about_ca_system_score_codex":0.00041544903,"about_ca_system_score_gemma":0.00036218794,"threshold_uncertainty_score":0.07213467},"labels":[],"label_agreement":null},{"id":"W4318818775","doi":"10.2139/ssrn.4299934","title":"A Deterministic Physical Approach for Elucidating the Temperature Effects on Electrical Responses of FinFET Transistor","year":2022,"lang":"en","type":"article","venue":"SSRN Electronic Journal","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Alberta","funders":"","keywords":"Transistor; Materials science; MOSFET; Engineering physics; Optoelectronics; Electronic engineering; Electrical engineering; Physics; Nanotechnology; Engineering; Voltage","score_opus":0.009384445190849836,"score_gpt":0.23676219731601242,"score_spread":0.2273777521251626,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4318818775","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.31931052,0.0010823252,0.659791,0.00089398643,0.00019339549,0.00016116843,0.00039135123,0.00052040146,0.017655896],"genre_scores_gemma":[0.9811292,0.0002913809,0.015694104,0.00011907027,0.000034736353,0.00008295402,0.00005798983,0.00003867729,0.0025518057],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9998374,0.000032635337,0.000006712919,0.000035976806,0.00006323768,0.000023970979],"domain_scores_gemma":[0.99951315,0.00028808645,0.000053289667,0.00008276665,0.000052079144,0.000010631001],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00035261974,0.00026382072,0.00034617094,0.00023848623,0.0003512614,0.0003640403,0.0008215573,0.0007802838,0.001532947],"category_scores_gemma":[0.0016757038,0.00036786508,0.0005221138,0.00017980071,0.0005821599,0.00063283974,0.00044056156,0.00058127334,0.00016074251],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00010881111,0.00008143974,0.002056978,0.00025959982,0.00008775128,0.00036762506,0.00019852759,0.7201723,0.15718171,0.1088072,0.00072166306,0.009956472],"study_design_scores_gemma":[0.000004452093,0.000020899091,0.0007263429,0.0000052952564,0.0000071353525,0.000037034122,0.000010111491,0.9904687,0.0037693027,0.004660344,0.00028126463,0.000009059708],"about_ca_topic_score_codex":0.0015013939,"about_ca_topic_score_gemma":0.0021263235,"teacher_disagreement_score":0.001532947,"about_ca_system_score_codex":0.00061976304,"about_ca_system_score_gemma":0.000472596,"threshold_uncertainty_score":0.005128205},"labels":[],"label_agreement":null},{"id":"W4319996310","doi":"10.1109/jflex.2023.3237991","title":"Speed and Scalability of Ambipolar Deep-Subthreshold TFTs for Ultralow-Power Printed Electronics","year":2023,"lang":"en","type":"article","venue":"IEEE Journal on Flexible Electronics","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":2,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Simon Fraser University","funders":"Simon Fraser University; Chinese Academy of Sciences; National Natural Science Foundation of China","keywords":"Subthreshold conduction; Ambipolar diffusion; CMOS; Digital electronics; Transistor; Scalability; Electronic circuit; Electronics; Logic gate; Electronic engineering; Computer science; Electrical engineering; Materials science; Engineering; Physics; Voltage; Electron","score_opus":0.020081283196871764,"score_gpt":0.2668744236585054,"score_spread":0.24679314046163361,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4319996310","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.95887834,0.00056508166,0.034123886,0.00012256426,0.000037040565,0.000028658813,0.00010553818,0.00022305196,0.0059158355],"genre_scores_gemma":[0.99386555,0.00013936668,0.005469115,0.000012006284,0.0000036404492,0.000008606401,0.000032144213,0.000012220294,0.00045736186],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999268,0.00001207513,0.000003263805,0.000010452447,0.000037074107,0.000010337432],"domain_scores_gemma":[0.9997186,0.00017593139,0.000030592095,0.000024004592,0.000039828978,0.000010946818],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00016710532,0.00021655935,0.00012163442,0.00012943937,0.00014611146,0.0003083113,0.00027557267,0.00026390955,0.0010257473],"category_scores_gemma":[0.0007453681,0.00008371816,0.00013524543,0.00013889614,0.00017962386,0.00055830245,0.00010889577,0.00016847628,0.00016820083],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00027284605,0.00009778754,0.0039139497,0.0002040155,0.00004412155,0.00052895566,0.00014877412,0.3818545,0.5803144,0.0067015397,0.0005202137,0.025398877],"study_design_scores_gemma":[0.00002502031,0.0003604009,0.0022173894,0.0000172875,0.000026992588,0.00015459549,0.000043427004,0.7822672,0.21181157,0.0014854599,0.0015703589,0.000020266743],"about_ca_topic_score_codex":0.0005680128,"about_ca_topic_score_gemma":0.0008807267,"teacher_disagreement_score":0.0010257473,"about_ca_system_score_codex":0.0003096832,"about_ca_system_score_gemma":0.00013348772,"threshold_uncertainty_score":0.0034314394},"labels":[],"label_agreement":null},{"id":"W4360614840","doi":"10.3390/ma16072561","title":"Material-Inherent Noise Sources in Quantum Information Architecture","year":2023,"lang":"en","type":"review","venue":"Materials","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":8,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Canada First Research Excellence Fund; Industry Canada","keywords":"Computer science; Quantum computer; Noise (video); Quantum entanglement; Quantum; Quantum technology; Quantum information; Quantum information science; Scale (ratio); Coherence (philosophical gambling strategy); Computer engineering; Open quantum system; Artificial intelligence; Physics; Quantum mechanics","score_opus":0.04620744712437211,"score_gpt":0.2898630875977404,"score_spread":0.24365564047336827,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4360614840","genre_codex":"review","genre_gemma":"review","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"review","genre_consensus":"review","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.0010142926,0.990612,0.0016517118,0.00040245894,0.0003445051,0.000010296485,0.000028265677,0.000020107791,0.0059165163],"genre_scores_gemma":[0.007627255,0.98911,0.0010648109,0.000248207,0.0002079593,0.000019740095,0.000035028133,0.0000047579338,0.001682405],"study_design_codex":"design_other","study_design_gemma":"not_applicable","domain_scores_codex":[0.9998492,0.000019914422,0.000014178169,0.000029425404,0.00007104476,0.000016184753],"domain_scores_gemma":[0.9998652,0.00008181669,0.000014383418,0.00000655482,0.000026927379,0.0000050210406],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00029228738,0.00047497288,0.0005496041,0.0011880615,0.0003576359,0.0007874393,0.0005131483,0.0008303836,0.0020866373],"category_scores_gemma":[0.00040403428,0.00031489006,0.00033380886,0.0012540347,0.0006020519,0.0011938614,0.00049357937,0.0011263894,0.0009021285],"study_design_candidate":"not_applicable","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000051181934,0.00007973524,0.00031783571,0.027845288,0.00007182083,0.0004403348,0.00023947336,0.0019511211,0.018852482,0.12537436,0.01901522,0.80576116],"study_design_scores_gemma":[0.000004880798,0.00008869228,0.00039237656,0.0022521904,0.00005515076,0.0009475282,0.00006787166,0.0005771039,0.00701405,0.014275139,0.9742988,0.00002639025],"about_ca_topic_score_codex":0.0005779785,"about_ca_topic_score_gemma":0.0008922334,"teacher_disagreement_score":0.0020866373,"about_ca_system_score_codex":0.00050246215,"about_ca_system_score_gemma":0.00068518607,"threshold_uncertainty_score":0.0069804788},"labels":[],"label_agreement":null},{"id":"W4380610092","doi":"10.12737/2219-0767-2023-16-2-93-100","title":"Verilog-A model of the impurity freeze-out in LDD regions at cryogenic temperatures","year":2023,"lang":"en","type":"article","venue":"Modeling of systems and processes","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Mitel (Canada)","funders":"","keywords":"Transconductance; Transistor; CMOS; Voltage; Materials science; Threshold voltage; Scalability; Optoelectronics; Electronic engineering; Electrical engineering; Computer science; Engineering","score_opus":0.047660886552711605,"score_gpt":0.2478000312167696,"score_spread":0.200139144664058,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4380610092","genre_codex":"methods","genre_gemma":"methods","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"methods","genre_consensus":"methods","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.073151104,0.0006934273,0.8675857,0.00085722073,0.00028665527,0.00043443055,0.0066546868,0.016037015,0.034299754],"genre_scores_gemma":[0.83753455,0.0008198344,0.13202201,0.0005452287,0.00006816669,0.001147565,0.0040647383,0.0010841493,0.022713777],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99951863,0.000115113886,0.000032091142,0.00007132045,0.00018905259,0.0000737621],"domain_scores_gemma":[0.9988814,0.00055905094,0.00008389408,0.00018882073,0.00026641658,0.000020364616],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0006234632,0.00070099096,0.0005186254,0.000458243,0.00051874015,0.0011350672,0.0022106373,0.0010686335,0.013045351],"category_scores_gemma":[0.0019247863,0.00048481487,0.0007071081,0.00030046247,0.0005882538,0.0013338685,0.000410642,0.0014036213,0.0025938805],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00021427766,0.00005883483,0.0007094163,0.00027706227,0.00002251455,0.00020785148,0.000098347584,0.9499579,0.007877796,0.024523372,0.0033455146,0.012707185],"study_design_scores_gemma":[0.00006613087,0.00008009274,0.00016274194,0.000036437727,0.00002310061,0.000062158586,0.000010966287,0.9758388,0.0065054665,0.0064444146,0.010755723,0.000013959664],"about_ca_topic_score_codex":0.0073967585,"about_ca_topic_score_gemma":0.0062859035,"teacher_disagreement_score":0.013045351,"about_ca_system_score_codex":0.0012338532,"about_ca_system_score_gemma":0.0021316195,"threshold_uncertainty_score":0.04364103},"labels":[],"label_agreement":null},{"id":"W4380791133","doi":"10.1063/5.0147810","title":"Influence of random telegraph noise on quantum bit gate operation","year":2023,"lang":"en","type":"article","venue":"Journal of Applied Physics","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":2,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Wilfrid Laurier University","funders":"Natural Sciences and Engineering Research Council of Canada; Center for Hierarchical Manufacturing, National Science Foundation; National Science Foundation","keywords":"Bit (key); Noise (video); Telegraphy; Physics; Optoelectronics; Electronic engineering; Computer science; Telecommunications; Engineering","score_opus":0.01494483899981227,"score_gpt":0.2374284855023067,"score_spread":0.22248364650249441,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4380791133","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.7453136,0.00050709257,0.2467246,0.0006511899,0.000058028854,0.00004588613,0.0001251943,0.00017558006,0.006398887],"genre_scores_gemma":[0.9960294,0.00011108076,0.0034295744,0.000021278482,0.000008830402,0.000013681544,0.000019016965,0.000015844085,0.0003514834],"study_design_codex":"simulation_or_modeling","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9994419,0.00017495273,0.000016432741,0.000084134146,0.00019529938,0.00008726594],"domain_scores_gemma":[0.9982003,0.0012280449,0.00027658057,0.00011783452,0.00011636779,0.000060903287],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00076880923,0.0004251445,0.000420865,0.0002943714,0.0003554849,0.0005393172,0.0005535669,0.00066135766,0.0007777605],"category_scores_gemma":[0.0038444554,0.00021600336,0.0003354085,0.00023145747,0.0012730785,0.0011977621,0.0005689199,0.00049792917,0.00007447345],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00041160212,0.00006948469,0.0045866026,0.00021764128,0.00008130543,0.0010284652,0.00021560722,0.8809192,0.04354985,0.062648624,0.00023590942,0.006035634],"study_design_scores_gemma":[0.0000056816143,0.000026610594,0.00033821416,0.0000039314427,0.000007193585,0.00004055082,0.000014027827,0.9920151,0.0046631224,0.0028129478,0.00006373988,0.0000088463285],"about_ca_topic_score_codex":0.0015292,"about_ca_topic_score_gemma":0.00082284614,"teacher_disagreement_score":0.0015292,"about_ca_system_score_codex":0.00051850756,"about_ca_system_score_gemma":0.00057281164,"threshold_uncertainty_score":0.004065931},"labels":[],"label_agreement":null},{"id":"W4381384258","doi":"10.1016/j.ssc.2023.115253","title":"Assessing the effectiveness of an empirical model for a compound semiconductor’s velocity-field characteristic","year":2023,"lang":"en","type":"article","venue":"Solid State Communications","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of British Columbia, Okanagan Campus; University of British Columbia","funders":"","keywords":"Robustness (evolution); Gallium arsenide; Monte Carlo method; Field (mathematics); Statistical physics; Semiconductor; Computer science; Mathematics; Materials science; Physics; Chemistry; Statistics; Condensed matter physics","score_opus":0.11500464475254234,"score_gpt":0.4082815558360415,"score_spread":0.2932769110834991,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4381384258","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.7950398,0.0004205134,0.19662696,0.0013096648,0.000074225085,0.00013989114,0.00034088586,0.00036612546,0.0056820274],"genre_scores_gemma":[0.987773,0.00009450884,0.011300878,0.00007078554,0.000019862946,0.00003936875,0.00017769451,0.000028354032,0.0004955313],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99793005,0.0011994909,0.00007956493,0.00032522625,0.0003152733,0.00015043322],"domain_scores_gemma":[0.9073712,0.08528112,0.0026891916,0.0024094563,0.0018835615,0.000365541],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.007467868,0.0009693727,0.0006424356,0.0014589229,0.0005517011,0.0017144808,0.0021506196,0.0026277509,0.0024176466],"category_scores_gemma":[0.064860865,0.00036228274,0.0006518796,0.00073321647,0.0011068375,0.0031970188,0.0010413622,0.001238418,0.00036527123],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0004892282,0.0003887553,0.011781335,0.00009821059,0.00007808704,0.0000966985,0.000071807335,0.95987374,0.0008928998,0.011424584,0.00047358754,0.014331142],"study_design_scores_gemma":[0.000027730406,0.00011714016,0.0011862285,0.000014565286,0.00001457529,0.000030095329,0.00003818819,0.99591136,0.00034804366,0.0021557868,0.00014712353,0.000009270982],"about_ca_topic_score_codex":0.00942412,"about_ca_topic_score_gemma":0.0035450174,"teacher_disagreement_score":0.00942412,"about_ca_system_score_codex":0.0019078809,"about_ca_system_score_gemma":0.0014530676,"threshold_uncertainty_score":0.039494336},"labels":[],"label_agreement":null},{"id":"W4383554013","doi":"10.3390/electronics12132978","title":"Accurate On-Chip Thermal Peak Detection Based on Heuristic Algorithms and Embedded Temperature Sensors","year":2023,"lang":"en","type":"article","venue":"Electronics","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":4,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Polytechnique Montréal; Université du Québec en Outaouais","funders":"","keywords":"Chip; Simulated annealing; Thermal; Algorithm; Computer science; Heuristic; Ranging; Electronic engineering; Materials science; Engineering; Artificial intelligence; Physics","score_opus":0.012289076406481799,"score_gpt":0.23739947034222408,"score_spread":0.22511039393574228,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4383554013","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.06387195,0.00037619026,0.933781,0.000046153087,0.000025442861,0.000036317568,0.000017813669,0.0007366287,0.0011084656],"genre_scores_gemma":[0.70753807,0.00015605231,0.29138762,0.000052479714,0.00001749885,0.00006815236,0.000053519427,0.000060148373,0.00066639134],"study_design_codex":"simulation_or_modeling","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9995623,0.00012579968,0.00002342354,0.000088842375,0.00015473092,0.000044729026],"domain_scores_gemma":[0.9990502,0.0004167596,0.00018149248,0.0001079381,0.00021590493,0.000027681514],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0005703709,0.0006530804,0.000692507,0.00075197895,0.00027700304,0.00067355536,0.0007622583,0.0005165425,0.00043809088],"category_scores_gemma":[0.0024497071,0.00035750173,0.00035775028,0.0006353898,0.00042012244,0.0008006758,0.00038694066,0.00042250502,0.0001571931],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0002811389,0.00010017112,0.0023582906,0.00009337517,0.00006579514,0.000059477585,0.00007444624,0.76266086,0.027113825,0.003409828,0.0005538517,0.203229],"study_design_scores_gemma":[0.000006981568,0.000026616142,0.00026450618,0.000003020778,0.0000050008816,0.000018400666,0.000005539454,0.9954672,0.0036595175,0.00039459177,0.0001438593,0.000004837979],"about_ca_topic_score_codex":0.0035435725,"about_ca_topic_score_gemma":0.003951541,"teacher_disagreement_score":0.0035435725,"about_ca_system_score_codex":0.0006000769,"about_ca_system_score_gemma":0.001020598,"threshold_uncertainty_score":0.0070459247},"labels":[],"label_agreement":null},{"id":"W4385759715","doi":"10.3390/electronics12163419","title":"Effect of Non-Ideal Cross-Sectional Shape on the Performance of Nanosheet-Based FETs","year":2023,"lang":"en","type":"article","venue":"Electronics","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McMaster University","funders":"Higher Education Discipline Innovation Project; Xidian University","keywords":"Nanosheet; Materials science; Channel (broadcasting); Capacitance; Ideal (ethics); Transistor; Optoelectronics; Field-effect transistor; Nanotechnology; Electrical engineering; Engineering; Voltage; Chemistry; Electrode","score_opus":0.011259621402415685,"score_gpt":0.2620328556075964,"score_spread":0.2507732342051807,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4385759715","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.98849815,0.00043463518,0.007816378,0.00008926682,0.00003227334,0.000015071809,0.00019927022,0.00017398351,0.002740963],"genre_scores_gemma":[0.9982943,0.00012708255,0.0012297034,0.000017913164,0.0000027207682,0.0000057593224,0.000075439675,0.000022303308,0.00022478824],"study_design_codex":"simulation_or_modeling","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99986136,0.00001628031,0.000007930804,0.00002688017,0.00005356497,0.00003400494],"domain_scores_gemma":[0.9994498,0.000233873,0.00011383221,0.00006595012,0.00009883314,0.000037762547],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00026269502,0.00034613628,0.0002630246,0.00022426622,0.00024883813,0.0005269807,0.0005277719,0.00041239892,0.00088483817],"category_scores_gemma":[0.0011579087,0.00025265556,0.00023477536,0.0002182481,0.00031862318,0.0007012319,0.00025410746,0.00019189018,0.00017891158],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00047515507,0.00013821044,0.014141575,0.00024043774,0.00018803845,0.0010484962,0.00018190859,0.697344,0.2698485,0.0033835126,0.00078187155,0.012228314],"study_design_scores_gemma":[0.000039002898,0.0006038897,0.00895316,0.000026822105,0.00010065241,0.00043682987,0.00015694278,0.8355672,0.15067282,0.0014459329,0.0019435993,0.000053200274],"about_ca_topic_score_codex":0.00088053953,"about_ca_topic_score_gemma":0.0017750942,"teacher_disagreement_score":0.00088483817,"about_ca_system_score_codex":0.000605925,"about_ca_system_score_gemma":0.00037652676,"threshold_uncertainty_score":0.0043963194},"labels":[],"label_agreement":null},{"id":"W4385805685","doi":"10.1115/1.862tsc_ch7","title":"Transient Thermal Spreading Resistance","year":2023,"lang":"en","type":"book-chapter","venue":"ASME eBooks","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo; Memorial University of Newfoundland","funders":"","keywords":"Transient (computer programming); Thermal resistance; Microelectronics; Centroid; Thermal; Materials science; Spreading resistance profiling; Transient analysis; Mechanics; Engineering physics; Transient response; Electrical engineering; Engineering; Computer science; Thermodynamics; Optoelectronics; Physics; Mathematics; Geometry","score_opus":0.028979463490743616,"score_gpt":0.21563700851633716,"score_spread":0.18665754502559354,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4385805685","genre_codex":"other","genre_gemma":"other","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"other","genre_consensus":"other","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.08527939,0.040623028,0.21724992,0.0010886746,0.0029630535,0.00033727015,0.001364825,0.008309329,0.64278454],"genre_scores_gemma":[0.52667665,0.013752564,0.019221492,0.0005428163,0.0003488399,0.00017852531,0.0009921758,0.0008841518,0.43740284],"study_design_codex":"bench_or_experimental","study_design_gemma":"theoretical_or_conceptual","domain_scores_codex":[0.9996587,0.000015496182,0.000011077949,0.00008924949,0.00018401374,0.000041524705],"domain_scores_gemma":[0.99969363,0.00008578766,0.00002723913,0.00006131505,0.000108932516,0.00002304471],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00015103834,0.00046182747,0.00060191104,0.00056161394,0.00035295123,0.0015352111,0.0008773985,0.0008718548,0.018848585],"category_scores_gemma":[0.0006547191,0.00027230722,0.00041227078,0.0008026058,0.00043347673,0.0014146362,0.00046855086,0.0009141345,0.011062088],"study_design_candidate":"theoretical_or_conceptual","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00016919366,0.0000916621,0.00047110431,0.0011184938,0.000028595414,0.0011223047,0.0004920659,0.0069802743,0.4774795,0.06551976,0.05550106,0.39102602],"study_design_scores_gemma":[0.000030402127,0.0005706423,0.0020622376,0.00027045564,0.00009563695,0.005599182,0.00021146826,0.035584588,0.41147923,0.016307782,0.52768373,0.000104619256],"about_ca_topic_score_codex":0.0003857463,"about_ca_topic_score_gemma":0.00045271488,"teacher_disagreement_score":0.018848585,"about_ca_system_score_codex":0.00057191827,"about_ca_system_score_gemma":0.00027569436,"threshold_uncertainty_score":0.06305486},"labels":[],"label_agreement":null},{"id":"W4386172985","doi":"10.54254/2753-8818/5/20230495","title":"Analog integrated circuit design with machine learning","year":2023,"lang":"en","type":"article","venue":"Theoretical and Natural Science","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Western University","funders":"","keywords":"Computer science; Analogue electronics; Integrated circuit; Mixed-signal integrated circuit; Integrated circuit design; Electronic circuit; Analog computer; Electronic engineering; Computer architecture; Artificial intelligence; Computer engineering; Engineering; Electrical engineering; Embedded system","score_opus":0.011766613195325055,"score_gpt":0.2232219899898302,"score_spread":0.21145537679450516,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4386172985","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.0016857365,0.005401095,0.9718394,0.00038600602,0.00025807094,0.00008337057,0.000088001805,0.0008728588,0.019385403],"genre_scores_gemma":[0.17031601,0.0118364785,0.79755783,0.00052181276,0.00051200355,0.00036900205,0.00047535752,0.00023498958,0.018176483],"study_design_codex":"design_other","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9994935,0.00010587474,0.000031406602,0.000101797574,0.00023867183,0.000028694025],"domain_scores_gemma":[0.99954396,0.00018701417,0.00003811152,0.00007527523,0.00014432838,0.000011231577],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0005792517,0.00074143027,0.0006144377,0.000858054,0.00034694187,0.0016238125,0.0013451255,0.00092472247,0.008676129],"category_scores_gemma":[0.0019155162,0.00036536547,0.0007988665,0.0009843648,0.0005741516,0.0012033548,0.0005582085,0.0013618876,0.003005357],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00006695461,0.0000607923,0.0006245804,0.0011079018,0.00011690028,0.00013853937,0.00008493524,0.20599057,0.008663601,0.1896112,0.0098488275,0.5836852],"study_design_scores_gemma":[0.000029769006,0.00012582428,0.00027458082,0.00030224698,0.000065208835,0.00030443427,0.00003139143,0.7095629,0.012728962,0.14614612,0.13039017,0.0000383954],"about_ca_topic_score_codex":0.00080682215,"about_ca_topic_score_gemma":0.0009442555,"teacher_disagreement_score":0.008676129,"about_ca_system_score_codex":0.00082926557,"about_ca_system_score_gemma":0.0007436663,"threshold_uncertainty_score":0.029024601},"labels":[],"label_agreement":null},{"id":"W4386265506","doi":"10.1109/tnano.2023.3309908","title":"An Efficient Architecture of Adder Using Fault-Tolerant Majority Gate Based on Atomic Silicon Nanotechnology","year":2023,"lang":"en","type":"article","venue":"IEEE Transactions on Nanotechnology","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":9,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Saskatchewan","funders":"","keywords":"CMOS; Adder; Transistor; Computer science; Electronic circuit; Logic gate; Digital electronics; Quantum computer; Dangling bond; Integrated circuit; Nanoelectronics; Very-large-scale integration; Nanotechnology; Electronic engineering; Fault tolerance; Silicon; Materials science; Electrical engineering; Engineering; Optoelectronics; Quantum; Physics","score_opus":0.017246147228344208,"score_gpt":0.2543253297259066,"score_spread":0.23707918249756238,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4386265506","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.6346029,0.002706229,0.32703468,0.00078166754,0.00033265274,0.00022118898,0.00074149604,0.00443542,0.029143704],"genre_scores_gemma":[0.9272754,0.00034489832,0.0693451,0.00011979297,0.000021263011,0.000048522656,0.00022489176,0.000023827391,0.0025963169],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99993,0.000007600991,0.0000075697185,0.000015344967,0.00002059261,0.000018720839],"domain_scores_gemma":[0.99995756,0.0000073082533,0.0000057975813,0.000008175276,0.000015081096,0.0000059606546],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00006506557,0.00027981907,0.00035505492,0.000349314,0.00045111493,0.0005655788,0.0008594405,0.00034433103,0.0018445826],"category_scores_gemma":[0.000095319425,0.0001619397,0.00032175786,0.0003356634,0.0001689386,0.0005729423,0.0002611181,0.00016996493,0.00029941788],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0009374788,0.0002060504,0.0032522334,0.00075192447,0.00023688475,0.0020047831,0.00035104647,0.114193454,0.5279438,0.05925777,0.009127936,0.28173667],"study_design_scores_gemma":[0.00020211661,0.0014494763,0.002635903,0.000057608177,0.00029528467,0.0017966831,0.0001183821,0.64086396,0.305632,0.017014649,0.029828591,0.0001053973],"about_ca_topic_score_codex":0.0015635072,"about_ca_topic_score_gemma":0.0027816193,"teacher_disagreement_score":0.0018445826,"about_ca_system_score_codex":0.0003895346,"about_ca_system_score_gemma":0.00057896134,"threshold_uncertainty_score":0.0061707497},"labels":[],"label_agreement":null},{"id":"W4386361455","doi":"10.1109/nano58406.2023.10231266","title":"QuickSim: Efficient and Accurate Physical Simulation of Silicon Dangling Bond Logic","year":2023,"lang":"en","type":"article","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":25,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of British Columbia","funders":"","keywords":"Pace; Computer science; CMOS; Automation; Dissipation; Dangling bond; Computer engineering; Electronic design automation; Field (mathematics); Domain (mathematical analysis); Logic synthesis; Logic gate; Electronic engineering; Silicon; Embedded system; Algorithm; Engineering; Materials science; Mathematics","score_opus":0.032809906407208135,"score_gpt":0.29072007982908493,"score_spread":0.2579101734218768,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4386361455","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.14640787,0.0008394676,0.82135874,0.0005581561,0.00020393557,0.00020565133,0.0014831234,0.007989341,0.02095383],"genre_scores_gemma":[0.6855968,0.00062623835,0.3048114,0.00016417085,0.000037566235,0.00051320967,0.0012491456,0.0007215586,0.0062799607],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9997844,0.000048073623,0.000008669463,0.000019946277,0.000111174515,0.000027666954],"domain_scores_gemma":[0.99931216,0.0004269631,0.000048115664,0.000072546834,0.000101754355,0.000038481227],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0004660495,0.00063353166,0.00052484416,0.00046421477,0.00037338267,0.00063907326,0.0015732335,0.00090175425,0.0060649766],"category_scores_gemma":[0.0015682515,0.00037100803,0.0005025793,0.00054921216,0.00042661658,0.00063052675,0.0006819155,0.0007685906,0.00056234613],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000048892336,0.00003751849,0.00089845073,0.00009538599,0.000030494115,0.000055601715,0.00003632604,0.971711,0.0027646178,0.009530826,0.0017328195,0.013057991],"study_design_scores_gemma":[0.000010641972,0.000013831624,0.00004869642,0.0000025475342,0.000002230549,0.000008581193,0.0000040203254,0.99709165,0.0009023654,0.00092661957,0.0009864158,0.0000024719493],"about_ca_topic_score_codex":0.004364626,"about_ca_topic_score_gemma":0.0065935124,"teacher_disagreement_score":0.0060649766,"about_ca_system_score_codex":0.0006268262,"about_ca_system_score_gemma":0.0014574906,"threshold_uncertainty_score":0.020289361},"labels":[],"label_agreement":null},{"id":"W4386696993","doi":"10.1016/j.sse.2023.108777","title":"Simulation process flow for the implementation of industry-standard FD-SOI quantum dot devices","year":2023,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":5,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Nanoacademic Technologies; Institut quantique; Université de Sherbrooke","funders":"Natural Sciences and Engineering Research Council of Canada; Canada First Research Excellence Fund","keywords":"Silicon on insulator; Quantum dot; Qubit; Fabrication; Optoelectronics; Process (computing); Quantum dot laser; Semiconductor device fabrication; Quantum computer; Flow (mathematics); Semiconductor; Materials science; Quantum; Silicon; Computer science; Electronic engineering; Physics; Nanotechnology; Engineering; Quantum mechanics; Mechanics","score_opus":0.023649902550605388,"score_gpt":0.3427472080202253,"score_spread":0.3190973054696199,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4386696993","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.22817679,0.00015401846,0.71652377,0.0005398542,0.00015837287,0.00036292765,0.0023415228,0.0065797637,0.04516306],"genre_scores_gemma":[0.83038497,0.00010168713,0.15995184,0.000114032424,0.000011821629,0.00033561923,0.0012320336,0.0005637727,0.0073042717],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9998673,0.000027462147,0.000005299314,0.000017572153,0.00005761006,0.00002486242],"domain_scores_gemma":[0.99961084,0.00021779827,0.000020061694,0.000042376545,0.00009314855,0.000015821326],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00032742412,0.00042685805,0.00030993784,0.0002791569,0.0004664717,0.000636348,0.00090420374,0.0007003339,0.011164599],"category_scores_gemma":[0.0010773189,0.00023762169,0.00031680547,0.00025152444,0.00025973757,0.0004868848,0.0002495138,0.00051032094,0.00080242986],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0002459146,0.00017697047,0.0022801226,0.00015466625,0.000032155738,0.00014986795,0.00018571637,0.92930275,0.012254821,0.029274896,0.0035685967,0.022373544],"study_design_scores_gemma":[0.000020488227,0.000020002835,0.00010734265,0.0000047594117,0.0000041718063,0.000011272916,0.000012177181,0.99121535,0.0049036318,0.0017798757,0.0019154693,0.0000053954864],"about_ca_topic_score_codex":0.006820508,"about_ca_topic_score_gemma":0.005209185,"teacher_disagreement_score":0.011164599,"about_ca_system_score_codex":0.00084563735,"about_ca_system_score_gemma":0.0013579936,"threshold_uncertainty_score":0.037349343},"labels":[],"label_agreement":null},{"id":"W4386832809","doi":"10.1039/d3na00638g","title":"Physical probing of quantum energy levels in a single indium arsenide (InAs) quantum dot","year":2023,"lang":"en","type":"article","venue":"Nanoscale Advances","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":2,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Khalifa University of Science, Technology and Research","keywords":"Quantum dot; Gallium arsenide; Indium arsenide; Materials science; Indium; Molecular beam epitaxy; Quantum point contact; Optoelectronics; Arsenide; Quantum well; Physics; Nanotechnology; Optics; Epitaxy","score_opus":0.028497599919702958,"score_gpt":0.26096049241734814,"score_spread":0.23246289249764518,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4386832809","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9963039,0.00010728648,0.0021959096,0.000039659033,0.000019638243,0.0000063222674,0.000102696264,0.00002805464,0.001196469],"genre_scores_gemma":[0.9985258,0.00004337449,0.0010110183,0.000008607792,0.000002651959,0.0000055725636,0.000032751464,0.0000032380349,0.0003669834],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99992526,0.000005887375,0.0000049037885,0.000024855044,0.000025860934,0.000013255808],"domain_scores_gemma":[0.9998548,0.000047535526,0.000021028023,0.00002711938,0.000030054194,0.00001956018],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0001569029,0.000107628766,0.00011775369,0.00028314165,0.00029243957,0.00029273581,0.00028827068,0.000254625,0.001596685],"category_scores_gemma":[0.00022595472,0.00011207015,0.00016795883,0.0002482365,0.00037785704,0.0003528254,0.00017033661,0.00024355241,0.0000882913],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00007590971,0.000053565032,0.0018647413,0.000045256747,0.000014715376,0.00015145044,0.0001167743,0.0013547852,0.9927289,0.0019795424,0.000080259706,0.0015342243],"study_design_scores_gemma":[0.000027341623,0.00039880915,0.03872116,0.000009739328,0.00004241653,0.0003579388,0.00027574823,0.0594834,0.89778084,0.0014528729,0.0014180536,0.000031792875],"about_ca_topic_score_codex":0.0006057402,"about_ca_topic_score_gemma":0.000719818,"teacher_disagreement_score":0.001596685,"about_ca_system_score_codex":0.00031629545,"about_ca_system_score_gemma":0.00011030394,"threshold_uncertainty_score":0.0053414702},"labels":[],"label_agreement":null},{"id":"W4386894404","doi":"10.3390/cryst13091398","title":"Numerical Simulations of Space Charge Waves Amplification Using Negative Differential Conductance in Strained Si/SiGe at 4.2 K","year":2023,"lang":"en","type":"article","venue":"Crystals","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McMaster University","funders":"Austrian Science Fund; Österreichische Nationalstiftung für Forschung, Technologie und Entwicklung; Christian Doppler Forschungsgesellschaft; McMaster University","keywords":"Heterojunction; Space charge; Condensed matter physics; Electric field; Optoelectronics; Materials science; Magnetic field; Physics; Electron","score_opus":0.05238801801119425,"score_gpt":0.29119211902541925,"score_spread":0.238804101014225,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4386894404","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.977375,0.000133089,0.009967863,0.00036947595,0.00005619532,0.000041411422,0.00039922664,0.00014598077,0.011511727],"genre_scores_gemma":[0.99152654,0.00008243861,0.005970168,0.0000637647,0.000008174291,0.000063464584,0.00025143975,0.000029369958,0.0020046965],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9998808,0.000022817305,0.0000056394983,0.000016434722,0.00003591714,0.000038467446],"domain_scores_gemma":[0.9995221,0.00026287095,0.00005181368,0.00002659317,0.00008785146,0.000048792495],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00022296564,0.00040233045,0.0005057127,0.0003725439,0.0005957536,0.00066332455,0.0006547013,0.0012583205,0.0018749591],"category_scores_gemma":[0.0010094426,0.0003536275,0.0005537933,0.00048638912,0.0007909502,0.00046546344,0.00040508597,0.00054633064,0.00014496534],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000047269332,0.000038059607,0.0012999192,0.00002514459,0.000014709561,0.00010611396,0.000057885503,0.99373156,0.0027847874,0.0011514525,0.0001464423,0.0005966982],"study_design_scores_gemma":[0.000015954598,0.000019008123,0.00039541235,0.0000032547887,0.0000034890259,0.000009701938,0.000025739313,0.99856913,0.0005612065,0.00023092746,0.00016040132,0.0000057373586],"about_ca_topic_score_codex":0.0136135155,"about_ca_topic_score_gemma":0.0070758923,"teacher_disagreement_score":0.0136135155,"about_ca_system_score_codex":0.0010163253,"about_ca_system_score_gemma":0.0008171285,"threshold_uncertainty_score":0.027068555},"labels":[],"label_agreement":null},{"id":"W4387790041","doi":"10.1109/tcsii.2023.3325809","title":"Induced Back-Gate Noise in FDSOI MOSFET","year":2023,"lang":"en","type":"article","venue":"IEEE Transactions on Circuits & Systems II Express Briefs","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":2,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Calgary","funders":"Natural Sciences and Engineering Research Council of Canada; CMC Microsystems; University of Calgary","keywords":"MOSFET; Noise (video); Optoelectronics; Electrical engineering; Silicon on insulator; Materials science; Electronic engineering; Computer science; Engineering; Transistor; Voltage; Artificial intelligence; Silicon","score_opus":0.03475088875392696,"score_gpt":0.24668336499804802,"score_spread":0.21193247624412107,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4387790041","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.14009266,0.0017847364,0.81986815,0.00034603625,0.00032528897,0.00013246878,0.00058244035,0.0007358517,0.03613241],"genre_scores_gemma":[0.9305997,0.0023102483,0.050561458,0.0002480316,0.00009699154,0.00011621051,0.00049255526,0.00015014166,0.015424712],"study_design_codex":"simulation_or_modeling","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99984515,0.0000146018865,0.000009140555,0.000026049302,0.00009116393,0.000013765954],"domain_scores_gemma":[0.9999347,0.000024979081,0.0000063020434,0.0000115395915,0.000019342086,0.000003228502],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00018009359,0.00047657156,0.00039606894,0.00032830497,0.00024298183,0.00042617333,0.00047932373,0.00054960465,0.00065007975],"category_scores_gemma":[0.00029725648,0.00021926533,0.00070178474,0.00017141456,0.000461152,0.00049734925,0.00027213723,0.00044507245,0.00028639418],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000107973676,0.00007038951,0.0021573615,0.00042032884,0.00007293806,0.0011962379,0.0005208184,0.51847863,0.18975118,0.24981727,0.002475072,0.034931812],"study_design_scores_gemma":[0.000008517318,0.00008657766,0.0004750244,0.000030489475,0.000017439012,0.00040372604,0.000021142536,0.9622664,0.014040296,0.019143673,0.0034867597,0.000019929503],"about_ca_topic_score_codex":0.0020205008,"about_ca_topic_score_gemma":0.0022194372,"teacher_disagreement_score":0.0020205008,"about_ca_system_score_codex":0.0008912469,"about_ca_system_score_gemma":0.00046602642,"threshold_uncertainty_score":0.006466508},"labels":[],"label_agreement":null},{"id":"W4388928173","doi":"","title":"Technology and design study of a 3D physics-basedinductor on a FDSOI CMOS technology for quantum and RF applications","year":2023,"lang":"en","type":"preprint","venue":"HAL (Le Centre pour la Communication Scientifique Directe)","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Institut interdisciplinaire d'innovation technologique; Université de Sherbrooke","funders":"","keywords":"CMOS; Physics; Electronic engineering; Optoelectronics; Computer science; Electrical engineering; Engineering","score_opus":0.03549953805312117,"score_gpt":0.26092079470585916,"score_spread":0.225421256652738,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4388928173","genre_codex":"empirical","genre_gemma":"methods","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"methods","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.8245098,0.003630409,0.10677481,0.0024020402,0.00046364625,0.00028275835,0.0009819113,0.0011531481,0.05980153],"genre_scores_gemma":[0.92753667,0.0008025556,0.06209277,0.00016734855,0.00008090472,0.00010207807,0.0002205532,0.000070826325,0.008926261],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998739,0.000012791719,0.0000035522235,0.000022776147,0.00007126984,0.000015669124],"domain_scores_gemma":[0.9998204,0.00003745366,0.000045041365,0.000027366741,0.000052542313,0.000017174965],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00013344889,0.00019802533,0.00027894723,0.00023760063,0.0002806714,0.00058506045,0.00073224615,0.00051456655,0.0016536815],"category_scores_gemma":[0.00022119272,0.00015650768,0.0003070725,0.00025479912,0.00029705508,0.0003978564,0.00021376666,0.00027650065,0.0005300147],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00011942323,0.000070030634,0.00108315,0.00035773622,0.000045512126,0.00038228283,0.00030274806,0.014927136,0.94659877,0.01937851,0.0029080256,0.013826716],"study_design_scores_gemma":[0.000100398494,0.0017027676,0.009076561,0.0001111185,0.00015659582,0.0020777485,0.0002299497,0.1928531,0.709262,0.004790914,0.07951472,0.00012415461],"about_ca_topic_score_codex":0.0010959974,"about_ca_topic_score_gemma":0.0016729023,"teacher_disagreement_score":0.0016536815,"about_ca_system_score_codex":0.00089534937,"about_ca_system_score_gemma":0.00067391817,"threshold_uncertainty_score":0.0064962506},"labels":[],"label_agreement":null},{"id":"W4389099661","doi":"10.1007/978-3-031-47627-3_6","title":"Summary","year":2023,"lang":"en","type":"book-chapter","venue":"SpringerBriefs in computer science","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Simon Fraser University","funders":"","keywords":"Dram; Computer science; Computer hardware","score_opus":0.027558165033825865,"score_gpt":0.2347539366870843,"score_spread":0.20719577165325845,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4389099661","genre_codex":"other","genre_gemma":"other","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"other","genre_consensus":"other","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.0014393681,0.0059598847,0.0020428791,0.016399434,0.020348327,0.00023283988,0.0059412485,0.00074528944,0.9468907],"genre_scores_gemma":[0.0042562177,0.0025807254,0.0007663695,0.0046203583,0.002148358,0.00010594635,0.003393453,0.00016322169,0.98196536],"study_design_codex":"not_applicable","study_design_gemma":"not_applicable","domain_scores_codex":[0.9993574,0.00006849715,0.000022359363,0.000108725275,0.00033883928,0.00010421295],"domain_scores_gemma":[0.9989492,0.00010204007,0.000039564566,0.00012893576,0.0005108566,0.0002693592],"candidate_categories":["insufficient_payload"],"consensus_categories":[],"category_scores_codex":[0.00074689393,0.00053262844,0.00031770047,0.001096765,0.0012244647,0.0029189694,0.0009733476,0.001131024,0.5088426],"category_scores_gemma":[0.002618682,0.00018060069,0.0005063284,0.0008776422,0.0003190329,0.0011837701,0.001604594,0.0012196109,0.33239815],"study_design_candidate":"not_applicable","study_design_consensus":"not_applicable","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00005683814,0.000022648315,0.0002754261,0.000120768156,0.00000456938,0.00007176728,0.00004922085,0.000051689472,0.00022686808,0.007817728,0.8642683,0.12703416],"study_design_scores_gemma":[0.0000038749745,0.000007828297,0.00023611868,0.000048112768,0.0000019656,0.000035897978,0.00003590486,0.000009935186,0.000089744986,0.0009387962,0.99858993,0.0000017811448],"about_ca_topic_score_codex":0.003789961,"about_ca_topic_score_gemma":0.005634485,"teacher_disagreement_score":0.4911574,"about_ca_system_score_codex":0.0012116589,"about_ca_system_score_gemma":0.0024253398,"threshold_uncertainty_score":0},"labels":[],"label_agreement":null},{"id":"W4389610003","doi":"10.1109/lssc.2023.3328364","title":"Editorial","year":2023,"lang":"nl","type":"editorial","venue":"IEEE Solid-State Circuits Letters","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Toronto","funders":"","keywords":"Gratitude; Power (physics); Editorial board; State (computer science); Zhàng; Political science; Psychology; Engineering ethics; Management; Sociology; Library science; Engineering; Computer science; Law; Social psychology; Physics; China","score_opus":0.017948354594695043,"score_gpt":0.2677176743841862,"score_spread":0.24976931978949116,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4389610003","genre_codex":"editorial","genre_gemma":"editorial","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"editorial","genre_consensus":"editorial","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.00004173158,0.001583619,0.000114938135,0.016047614,0.9772972,0.0000279779,0.00005415011,0.000112619724,0.00472017],"genre_scores_gemma":[0.0006430808,0.0027217008,0.00013963322,0.017313479,0.9471045,0.00003050939,0.00008416654,0.000084681174,0.031878237],"study_design_codex":"not_applicable","study_design_gemma":"not_applicable","domain_scores_codex":[0.9970446,0.00032961654,0.0003384343,0.0004556054,0.0015995038,0.00023230378],"domain_scores_gemma":[0.9838096,0.0025822492,0.0009086181,0.00065257365,0.008717075,0.0033298621],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0033167468,0.0026314375,0.0020127736,0.0020808568,0.002423277,0.006539652,0.0023877851,0.0069427956,0.044355817],"category_scores_gemma":[0.017228069,0.00073209964,0.001489209,0.0007850179,0.0013536059,0.00314638,0.0008065573,0.010837493,0.05355253],"study_design_candidate":"not_applicable","study_design_consensus":"not_applicable","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00001914552,0.000007018736,0.000014060792,0.00006769059,0.0000034264701,0.00007565647,0.000004188777,0.000011568155,0.000050052102,0.00017871671,0.99487174,0.0046968465],"study_design_scores_gemma":[0.000031097934,0.000021510752,0.000103399725,0.00014589251,0.000009842678,0.0002537059,0.000020025976,0.00007120921,0.00011618449,0.00052495487,0.99869365,0.000008484272],"about_ca_topic_score_codex":0.00061562675,"about_ca_topic_score_gemma":0.0013636221,"teacher_disagreement_score":0.044355817,"about_ca_system_score_codex":0.0017592106,"about_ca_system_score_gemma":0.0021996244,"threshold_uncertainty_score":0},"labels":[],"label_agreement":null},{"id":"W4389985961","doi":"10.1615/ihtc17.80-20","title":"PINNs application to the heat flow in Cz-Si growth for digital twin development","year":2023,"lang":"en","type":"article","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Victoria","funders":"","keywords":"Heat flow; Flow (mathematics); Materials science; Computer science; Thermodynamics; Mechanics; Thermal; Physics","score_opus":0.017232982459925706,"score_gpt":0.23826675899481078,"score_spread":0.22103377653488507,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4389985961","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.8551162,0.0037830987,0.08946127,0.0011334429,0.0011011098,0.0002044329,0.0006615192,0.0016411683,0.046897713],"genre_scores_gemma":[0.98110974,0.0006955155,0.012797082,0.000059744652,0.000037522626,0.00004271578,0.00010984081,0.000083709965,0.0050640767],"study_design_codex":"bench_or_experimental","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99988806,0.000008101831,0.0000038957546,0.00002933912,0.00005460077,0.000015948985],"domain_scores_gemma":[0.9999,0.000027112097,0.000016236407,0.000013853316,0.00003153618,0.000011185553],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00017360554,0.00033801133,0.00025311075,0.00024113504,0.00030618,0.0004884271,0.00032439534,0.00028409535,0.0021409295],"category_scores_gemma":[0.00043696706,0.00019239215,0.00014685468,0.00025970142,0.00033085977,0.0005826537,0.0006075771,0.00042187722,0.0003278599],"study_design_candidate":"simulation_or_modeling","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00021942338,0.0000325261,0.0007774002,0.00027535483,0.0000102706745,0.00018450679,0.00016752849,0.005849399,0.96648985,0.009032966,0.0012577429,0.015703153],"study_design_scores_gemma":[0.00001957161,0.00015038486,0.000754673,0.000022016664,0.000011909641,0.000092086535,0.00007541071,0.043076262,0.9447373,0.0008331502,0.010211115,0.00001606648],"about_ca_topic_score_codex":0.0014422333,"about_ca_topic_score_gemma":0.002179765,"teacher_disagreement_score":0.0021409295,"about_ca_system_score_codex":0.0008053911,"about_ca_system_score_gemma":0.00042438347,"threshold_uncertainty_score":0.0071621537},"labels":[],"label_agreement":null},{"id":"W4390501135","doi":"10.1007/s10489-023-05192-1","title":"Shallow quantum neural networks (SQNNs) with application to crack identification","year":2024,"lang":"en","type":"article","venue":"Applied Intelligence","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":11,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Trinity College","funders":"","keywords":"Computer science; Artificial neural network; Quantum; Qubit; Context (archaeology); Artificial intelligence; Generalization; Mathematics; Physics","score_opus":0.012676239240318092,"score_gpt":0.24633476981587998,"score_spread":0.23365853057556188,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4390501135","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.08909804,0.0012375789,0.90208554,0.0005244396,0.00018591995,0.000084205094,0.00021176467,0.00085688743,0.0057156403],"genre_scores_gemma":[0.8062251,0.00067137025,0.18874288,0.00014257811,0.000062465035,0.000064099964,0.00015650003,0.000095246796,0.003839693],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99987113,0.000030546063,0.000008830518,0.000034069024,0.000037481932,0.00001804395],"domain_scores_gemma":[0.9991874,0.00042387852,0.00007146455,0.000083487605,0.0001979944,0.000035845573],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0006176217,0.0003419839,0.00047306655,0.00043147127,0.00038387303,0.00056325266,0.0006768987,0.0008958115,0.0021093686],"category_scores_gemma":[0.0023850866,0.00030112523,0.00034432052,0.00072393945,0.0006779643,0.0011294967,0.00090210023,0.00089899026,0.00031425874],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0001641175,0.00009921844,0.0026639218,0.0002413386,0.000062882405,0.00013371855,0.00014517558,0.7275202,0.015782643,0.044758983,0.0027419257,0.20568588],"study_design_scores_gemma":[0.0000016524269,0.000008544296,0.00010123255,0.0000025118024,0.0000021790352,0.000005366229,0.0000049394453,0.99465704,0.00055795803,0.0044878297,0.00016814098,0.000002748733],"about_ca_topic_score_codex":0.0043009073,"about_ca_topic_score_gemma":0.0052782483,"teacher_disagreement_score":0.0043009073,"about_ca_system_score_codex":0.00044943905,"about_ca_system_score_gemma":0.00053317804,"threshold_uncertainty_score":0.008551717},"labels":[],"label_agreement":null},{"id":"W4390777864","doi":"10.1109/tcsi.2023.3347688","title":"DNN-Based Optimization to Significantly Speed Up and Increase the Accuracy of Electronic Circuit Design","year":2024,"lang":"en","type":"article","venue":"IEEE Transactions on Circuits and Systems I Regular Papers","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":7,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Polytechnique Montréal","funders":"","keywords":"Computer science; Flip-flop; CMOS; Performance metric; Metric (unit); Electronic engineering; Circuit design; Artificial neural network; Transistor; Digital electronics; Electronic circuit; Engineering; Embedded system; Artificial intelligence; Voltage; Electrical engineering","score_opus":0.022888423527106593,"score_gpt":0.22957574197223615,"score_spread":0.20668731844512955,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4390777864","genre_codex":"methods","genre_gemma":"methods","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"methods","genre_consensus":"methods","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.032975838,0.0008233902,0.9571086,0.00017521846,0.00008249091,0.00004283067,0.000112987,0.0010549636,0.007623736],"genre_scores_gemma":[0.71296775,0.00056609465,0.27979836,0.00018245843,0.000033945485,0.00012544946,0.0002726257,0.00024441213,0.005809014],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9998388,0.00003180978,0.000009506046,0.000032330496,0.00006632744,0.000021189859],"domain_scores_gemma":[0.99977356,0.00011070652,0.000026439666,0.000022259652,0.0000597353,0.0000073678843],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00034079337,0.0007676215,0.00035978534,0.00029786275,0.00017180695,0.0004103262,0.000684983,0.00041642025,0.0024054353],"category_scores_gemma":[0.0007835781,0.0003709007,0.00041226426,0.0002568051,0.0002532551,0.0006329094,0.00029606407,0.0008498766,0.00041610678],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000021791813,0.000019703004,0.00029495358,0.000065135944,0.000033426943,0.000020061836,0.000012057351,0.9516932,0.005723739,0.002670143,0.0006213374,0.038824473],"study_design_scores_gemma":[0.0000020484758,0.000010780559,0.000041381834,0.0000031592815,0.0000058504097,0.0000049965,0.0000015777671,0.9974503,0.0012730503,0.0006529966,0.0005525181,0.0000013615854],"about_ca_topic_score_codex":0.007125587,"about_ca_topic_score_gemma":0.018710243,"teacher_disagreement_score":0.007125587,"about_ca_system_score_codex":0.0009919017,"about_ca_system_score_gemma":0.0009339899,"threshold_uncertainty_score":0.014168203},"labels":[],"label_agreement":null},{"id":"W4390859310","doi":"10.32388/kxt49s","title":"Review of: \"Minimizing transistors and entering dimensions below 100 nanometers in the performance range of nanoelectronics technology, although  it has many advantages, but it faces various challenges\"","year":2024,"lang":"en","type":"preprint","venue":"Qeios","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Ontario Science Centre","funders":"","keywords":"Nanoelectronics; Nanometre; Transistor; Nanotechnology; Range (aeronautics); Materials science; Engineering physics; Electronic engineering; Electrical engineering; Computer science; Engineering; Aerospace engineering; Voltage","score_opus":0.041048723286023735,"score_gpt":0.2690874179654447,"score_spread":0.22803869467942098,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4390859310","genre_codex":"review","genre_gemma":"review","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"review","genre_consensus":"review","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.0019020382,0.71731406,0.014110096,0.050238963,0.09444163,0.00015138109,0.0018118809,0.00055003585,0.11947994],"genre_scores_gemma":[0.013706642,0.74692535,0.009635264,0.01888196,0.033666216,0.00014598071,0.0032512678,0.0007322734,0.17305511],"study_design_codex":"not_applicable","study_design_gemma":"not_applicable","domain_scores_codex":[0.9985979,0.00019422785,0.000116049894,0.00021650249,0.00075904856,0.00011632668],"domain_scores_gemma":[0.99559456,0.0008430878,0.00017518543,0.00018292146,0.0029420145,0.00026217813],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0017086627,0.00085147395,0.0010833127,0.0015696372,0.00074393506,0.0020719802,0.0012384605,0.0017063171,0.017878905],"category_scores_gemma":[0.003990364,0.00038681753,0.00052068004,0.0023853646,0.00075921277,0.0031014185,0.0010287209,0.002021047,0.015166119],"study_design_candidate":"not_applicable","study_design_consensus":"not_applicable","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00004318675,0.000026332747,0.00008790542,0.0039134054,0.000034967226,0.000038650454,0.000048810776,0.00040220653,0.0027726947,0.025881095,0.79943454,0.16731632],"study_design_scores_gemma":[0.0000022204458,0.000011281841,0.000094278366,0.00024600842,0.0000109992025,0.000033446915,0.0000122984275,0.000053977477,0.00071400666,0.0017369426,0.99707913,0.000005578039],"about_ca_topic_score_codex":0.0017769142,"about_ca_topic_score_gemma":0.0032641804,"teacher_disagreement_score":0.017878905,"about_ca_system_score_codex":0.001636314,"about_ca_system_score_gemma":0.00401386,"threshold_uncertainty_score":0.059810936},"labels":[],"label_agreement":null},{"id":"W4391810378","doi":"10.1103/physrevx.14.011017","title":"Quantifying the Properties of Nonproductive Attempts at Thermally Activated Energy-Barrier Crossing through Direct Observation","year":2024,"lang":"en","type":"article","venue":"Physical Review X","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":13,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Alberta","funders":"National Research Council Canada; Natural Sciences and Engineering Research Council of Canada","keywords":"Energy (signal processing); Materials science; Chemical physics; Statistical physics; Physics; Engineering physics; Computational physics; Quantum mechanics","score_opus":0.08692084045531749,"score_gpt":0.313407585383493,"score_spread":0.2264867449281755,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4391810378","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9730962,0.00062297715,0.02437451,0.000034379253,0.000015674075,0.00002902216,0.00016477949,0.00014402054,0.0015185223],"genre_scores_gemma":[0.9961892,0.00023337138,0.00302772,0.000012148015,0.0000047911326,0.000026120022,0.0001166971,0.000019670826,0.00037042928],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.999665,0.00003621789,0.000018125109,0.00010153656,0.00012906309,0.000050082126],"domain_scores_gemma":[0.9976453,0.0011775322,0.00058951793,0.00026991527,0.00021832716,0.00009929391],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0006653157,0.00029150676,0.00032438882,0.00083852216,0.00027645243,0.0006026318,0.00053268555,0.00034992365,0.0012843565],"category_scores_gemma":[0.0030108627,0.0002615619,0.00021194476,0.00053112325,0.0007786107,0.00081001595,0.0004258801,0.00072847825,0.00021025004],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00036814346,0.00025275216,0.0442764,0.00053418253,0.00015451651,0.00044901113,0.0007190501,0.013826819,0.8920509,0.009690159,0.0004445217,0.03723353],"study_design_scores_gemma":[0.00002549237,0.0009495452,0.10999611,0.00006181637,0.000116044066,0.0008018771,0.00041386278,0.15599318,0.7241687,0.004520573,0.0028129707,0.00013989846],"about_ca_topic_score_codex":0.00066679955,"about_ca_topic_score_gemma":0.00060897775,"teacher_disagreement_score":0.0012843565,"about_ca_system_score_codex":0.00048681864,"about_ca_system_score_gemma":0.00018695093,"threshold_uncertainty_score":0.004296601},"labels":[],"label_agreement":null},{"id":"W4392189060","doi":"10.36227/techrxiv.170906129.96884003/v1","title":"Quantum Machine Learning for Controller Placement in Software Defined Networks","year":2024,"lang":"en","type":"preprint","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":2,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Innovation Cluster (Canada)","funders":"Bundesministerium für Bildung und Forschung; Technische Universität Dresden; Deutsche Forschungsgemeinschaft; Center for Evolutionary and Theoretical Immunology","keywords":"Computer science; Controller (irrigation); Software; Quantum; Software-defined networking; Distributed computing; Operating system; Physics","score_opus":0.02187410752203786,"score_gpt":0.2521748484784697,"score_spread":0.23030074095643185,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4392189060","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.034957252,0.000284596,0.9617469,0.00046276528,0.00007581721,0.000047826623,0.000044952867,0.0004647757,0.0019151813],"genre_scores_gemma":[0.8075915,0.00026093592,0.18931106,0.00020237967,0.000059142032,0.00011815638,0.00011645852,0.000064934815,0.0022755275],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99933124,0.00021585672,0.00003143707,0.00014179727,0.00018568535,0.00009400083],"domain_scores_gemma":[0.99837995,0.0009846807,0.00013029102,0.00017067604,0.00026594024,0.0000684923],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0010374285,0.0004708473,0.00063076837,0.00040954322,0.0008217147,0.00095897773,0.0009814991,0.00079778297,0.0022453642],"category_scores_gemma":[0.0044868425,0.00032821702,0.00036314825,0.000562899,0.0009450484,0.0016994624,0.0008638856,0.0014207675,0.00025948585],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00010635945,0.000071002585,0.0006844806,0.00006198279,0.00001997343,0.00003977274,0.00006965604,0.8919057,0.0023680748,0.03709321,0.0014982074,0.06608162],"study_design_scores_gemma":[0.0000039842603,0.000009202116,0.000035477,0.0000017509917,0.0000011143915,0.0000031318957,0.000004592499,0.99368954,0.0003512451,0.0057183835,0.00017983644,0.0000017322136],"about_ca_topic_score_codex":0.005424334,"about_ca_topic_score_gemma":0.0045882436,"teacher_disagreement_score":0.005424334,"about_ca_system_score_codex":0.0016961383,"about_ca_system_score_gemma":0.0015862475,"threshold_uncertainty_score":0.012306392},"labels":[],"label_agreement":null},{"id":"W4392282921","doi":"","title":"Robustness analysis and improvement of QDI self-timed circuits","year":2011,"lang":"fr","type":"preprint","venue":"theses.fr (ABES)","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":true,"ca_institutions":"","funders":"","keywords":"Robustness (evolution); Computer science; Electronic circuit; Reliability engineering; Engineering; Electrical engineering; Chemistry","score_opus":0.025485378264664866,"score_gpt":0.23703594607779815,"score_spread":0.21155056781313328,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4392282921","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.12344878,0.0007083977,0.8675719,0.00019616041,0.00007646209,0.0000526731,0.00009726577,0.0010275719,0.006820925],"genre_scores_gemma":[0.97534025,0.0002202054,0.02221975,0.000038889397,0.00002146968,0.000032269112,0.000058038167,0.0000675695,0.002001452],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99927586,0.00011189862,0.000037496433,0.00018999341,0.00030257407,0.000082108694],"domain_scores_gemma":[0.9987985,0.0004850268,0.00022945461,0.00017434657,0.0002751828,0.00003753969],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0008341066,0.0005029893,0.0003584956,0.0005052993,0.00021872453,0.00091760897,0.00073054474,0.00039972758,0.0019047871],"category_scores_gemma":[0.0023871663,0.00020707358,0.00052452483,0.00022355955,0.00048155076,0.00048374603,0.0005002522,0.00048315385,0.00022190905],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00050288683,0.00006647472,0.0021018363,0.00041605107,0.00012872202,0.00026789264,0.00022029187,0.6788857,0.19866763,0.031061454,0.0008143081,0.08686673],"study_design_scores_gemma":[0.000010512616,0.00019876358,0.0006079695,0.000013086932,0.000028315828,0.00006602647,0.000012507159,0.966693,0.028718509,0.0024767828,0.0011620166,0.000012555238],"about_ca_topic_score_codex":0.0010293548,"about_ca_topic_score_gemma":0.00064144115,"teacher_disagreement_score":0.0019047871,"about_ca_system_score_codex":0.0009967843,"about_ca_system_score_gemma":0.0004083075,"threshold_uncertainty_score":0.007232189},"labels":[],"label_agreement":null},{"id":"W4392567289","doi":"10.1109/ted.2024.3370532","title":"Quantum Transport Simulations of Sub-60-mV/Decade Switching of Silicon Cold Source Transistors","year":2024,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":13,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McGill University; Nanoacademic Technologies","funders":"Higher Education Discipline Innovation Project; Natural Sciences and Engineering Research Council of Canada; National Natural Science Foundation of China","keywords":"Transistor; Silicon; Materials science; Optoelectronics; Quantum; Engineering physics; Physics; Electrical engineering; Engineering; Voltage; Quantum mechanics","score_opus":0.012942710810926504,"score_gpt":0.2444462522092373,"score_spread":0.23150354139831078,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4392567289","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9794835,0.00014815845,0.0075365994,0.00041220957,0.000034428376,0.000027865584,0.0005046429,0.00014055011,0.011711963],"genre_scores_gemma":[0.996788,0.00006426852,0.0013961203,0.00004734166,0.00000572111,0.000033742046,0.00016780938,0.00003142499,0.001465648],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99988985,0.000023200677,0.000003934653,0.000013813888,0.000030584382,0.000038528375],"domain_scores_gemma":[0.9994511,0.00035287626,0.000038097154,0.000026450605,0.00008263139,0.00004874917],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00033395243,0.00029837948,0.0005679081,0.00036777163,0.00059438334,0.00045484325,0.00080293283,0.0010745447,0.0035520531],"category_scores_gemma":[0.0010275753,0.00025383552,0.000633641,0.0004123032,0.00055980374,0.0005333892,0.00025562156,0.0004963353,0.00017644475],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00008580604,0.000057123725,0.0015482346,0.000043607473,0.000026224077,0.00018521328,0.00011899987,0.9846423,0.004989847,0.00628151,0.00062990625,0.0013910678],"study_design_scores_gemma":[0.000008934557,0.00001701062,0.00031269618,0.000003070147,0.0000038587714,0.000007758192,0.000019906482,0.9983398,0.0006109311,0.0005310058,0.00014130955,0.0000037013342],"about_ca_topic_score_codex":0.017865663,"about_ca_topic_score_gemma":0.0113554755,"teacher_disagreement_score":0.017865663,"about_ca_system_score_codex":0.0014701148,"about_ca_system_score_gemma":0.00087711256,"threshold_uncertainty_score":0.035523355},"labels":[],"label_agreement":null},{"id":"W4393036511","doi":"10.1109/gcwkshps58843.2023.10465195","title":"Centralized Digital Predistortion in 6G: Distributed Task Offloading and Scheduling for Complexity-Reduced PA Linearization","year":2023,"lang":"en","type":"article","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Huawei Technologies (Canada); Western University","funders":"","keywords":"Predistortion; Computer science; Linearization; Scheduling (production processes); Distributed computing; Computational complexity theory; Computer network; Mathematical optimization; Algorithm; Bandwidth (computing); Nonlinear system; Mathematics","score_opus":0.03783432889013969,"score_gpt":0.26264336564857216,"score_spread":0.22480903675843247,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4393036511","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.025389772,0.00034044156,0.9683239,0.00020705558,0.00008246004,0.000049422193,0.000041204534,0.0006652745,0.0049005263],"genre_scores_gemma":[0.82507014,0.00030885835,0.16984633,0.00022987388,0.0001004441,0.000084512336,0.00011159299,0.00007099252,0.004177252],"study_design_codex":"design_other","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99970466,0.000058790225,0.000014234997,0.00007300711,0.000096334654,0.00005309208],"domain_scores_gemma":[0.99971896,0.00006974131,0.000042175616,0.00005754984,0.000082148945,0.000029369907],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000217655,0.0008564876,0.00042506206,0.00024171444,0.00047274132,0.00055584934,0.00068045966,0.00037753928,0.0026984634],"category_scores_gemma":[0.00063706614,0.00021488138,0.00031978873,0.00029613776,0.0003831628,0.0007619616,0.0006797791,0.00070754625,0.00085532793],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00061188394,0.00027650298,0.0023222603,0.00032535673,0.00007524697,0.00057899364,0.00045908563,0.38038215,0.1639475,0.022437047,0.0075914273,0.42099258],"study_design_scores_gemma":[0.000045246034,0.00028490106,0.00069981324,0.00002335403,0.000028670689,0.00033719162,0.00009601597,0.94357437,0.039142713,0.00749563,0.008241412,0.000030664465],"about_ca_topic_score_codex":0.0012672528,"about_ca_topic_score_gemma":0.0034455308,"teacher_disagreement_score":0.0026984634,"about_ca_system_score_codex":0.00039349042,"about_ca_system_score_gemma":0.0006114044,"threshold_uncertainty_score":0.009027243},"labels":[],"label_agreement":null},{"id":"W4393141489","doi":"10.1109/icnf57520.2023.10472762","title":"Low frequency noise in AC biased metallic tunnel junctions","year":2023,"lang":"en","type":"article","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Université de Sherbrooke","funders":"","keywords":"Noise (video); Materials science; Acoustics; Electrical engineering; Infrasound; Optoelectronics; Physics; Engineering; Computer science","score_opus":0.03048372517181394,"score_gpt":0.24633351451723168,"score_spread":0.21584978934541774,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4393141489","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99400145,0.00035980452,0.0030021248,0.00013792921,0.00004084519,0.000010354757,0.000061023635,0.00009952856,0.0022868277],"genre_scores_gemma":[0.9986318,0.00010573555,0.0005808893,0.000030451025,0.000014696366,0.0000067015576,0.000040548293,0.000016978605,0.0005722735],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99953234,0.00005971844,0.000017326596,0.00009246824,0.00022048096,0.00007773696],"domain_scores_gemma":[0.9990422,0.00046537505,0.00015068677,0.00007514702,0.00021344198,0.00005314826],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00030970952,0.00027899168,0.0003216125,0.00041858116,0.00028877077,0.00038989258,0.00048545,0.00062034605,0.0017933839],"category_scores_gemma":[0.0015493761,0.00014164265,0.00012679312,0.00038229645,0.00058578025,0.00037941404,0.00030962448,0.00053492683,0.00031618268],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00052742654,0.000083652434,0.0017981068,0.000116481875,0.000019299638,0.00045495725,0.00037216337,0.0014737283,0.99006164,0.0007710599,0.00015561243,0.004165743],"study_design_scores_gemma":[0.000050553324,0.0010433212,0.017026516,0.00007164036,0.00004672106,0.0006448973,0.00032008812,0.02797232,0.95006603,0.000782731,0.0019392334,0.000036023514],"about_ca_topic_score_codex":0.00045013576,"about_ca_topic_score_gemma":0.0004122902,"teacher_disagreement_score":0.0017933839,"about_ca_system_score_codex":0.00032411498,"about_ca_system_score_gemma":0.000101972604,"threshold_uncertainty_score":0.005999446},"labels":[],"label_agreement":null},{"id":"W4399419956","doi":"10.36227/techrxiv.171779492.25769414/v1","title":"Investigation of p- and n-Type Quantum Dot Arrays Manufactured in 22nm FDSOI CMOS","year":2024,"lang":"en","type":"preprint","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Toronto","funders":"","keywords":"CMOS; Quantum dot; Optoelectronics; Silicon on insulator; Materials science; Silicon","score_opus":0.03649036725999054,"score_gpt":0.25642331371748134,"score_spread":0.21993294645749079,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4399419956","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9985355,0.00008391511,0.0007131757,0.0000139328,0.0000035009473,0.0000037087666,0.000054805725,0.00002068667,0.0005708146],"genre_scores_gemma":[0.996398,0.000073859235,0.0022430702,0.000010650503,0.0000022691956,0.000008853625,0.00008325191,0.000007122601,0.0011729737],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99990606,0.0000056952026,0.000003600926,0.000033350687,0.000034785455,0.000016481847],"domain_scores_gemma":[0.99984837,0.00003449272,0.00004630238,0.000012724086,0.0000383641,0.000019782472],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00007664521,0.00010026487,0.00012887716,0.00008275639,0.00025368674,0.0002711903,0.00020717352,0.00017642321,0.0006096041],"category_scores_gemma":[0.00022133303,0.00012647892,0.0000676668,0.000109515895,0.00018348832,0.00021961599,0.00013354105,0.00007061988,0.00014430733],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00005827449,0.000014296599,0.0015677077,0.000028442326,0.0000055744194,0.00011981886,0.00007838378,0.0008966572,0.9958242,0.00015279448,0.00004700666,0.0012068981],"study_design_scores_gemma":[0.000017181266,0.0004436583,0.016575804,0.000005514391,0.0000217834,0.00018784117,0.00012326022,0.00978337,0.9708062,0.00007398474,0.0019526365,0.000008834237],"about_ca_topic_score_codex":0.0018669936,"about_ca_topic_score_gemma":0.0037139354,"teacher_disagreement_score":0.0018669936,"about_ca_system_score_codex":0.00042691015,"about_ca_system_score_gemma":0.00021386796,"threshold_uncertainty_score":0.0037122369},"labels":[],"label_agreement":null},{"id":"W4399871288","doi":"10.3390/s24123990","title":"Acceleration for Efficient Automated Generation of Operational Amplifiers","year":2024,"lang":"en","type":"article","venue":"Sensors","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":3,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Memorial University of Newfoundland","funders":"National Natural Science Foundation of China","keywords":"Sizing; Boosting (machine learning); Computer science; Operational amplifier; Electronic engineering; Amplifier; Engineering; Artificial intelligence; CMOS","score_opus":0.04686842986397545,"score_gpt":0.289202190340479,"score_spread":0.24233376047650357,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4399871288","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.079937786,0.0001763603,0.90741235,0.00012260706,0.000060716087,0.000069882255,0.000061716644,0.0035939144,0.008564558],"genre_scores_gemma":[0.5986683,0.00009168611,0.39731964,0.000049210266,0.00001898919,0.00006537194,0.0001247339,0.00024928193,0.0034128593],"study_design_codex":"bench_or_experimental","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9997137,0.000028793285,0.000009569205,0.00003585895,0.00018429784,0.000027795215],"domain_scores_gemma":[0.9996859,0.00011988394,0.000045244433,0.00005907181,0.0000788082,0.000011168492],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00021004907,0.00045238528,0.00022730372,0.00035390255,0.00018559754,0.00036721127,0.00058138306,0.00030018244,0.0027655961],"category_scores_gemma":[0.00066747604,0.00019815245,0.00018073128,0.00028347468,0.00026424465,0.00045978228,0.00038859088,0.00045526316,0.00071809476],"study_design_candidate":"simulation_or_modeling","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00012511578,0.000080793376,0.0010937512,0.00017586985,0.000017655033,0.00014592864,0.00020378546,0.12397286,0.5611589,0.022193165,0.0030969938,0.28773525],"study_design_scores_gemma":[0.00003090411,0.00023523941,0.0006899566,0.000010383456,0.000011695227,0.00015689299,0.00002441054,0.77916723,0.1977647,0.0033732306,0.018517895,0.00001752724],"about_ca_topic_score_codex":0.0005050948,"about_ca_topic_score_gemma":0.00089443836,"teacher_disagreement_score":0.0027655961,"about_ca_system_score_codex":0.00031116357,"about_ca_system_score_gemma":0.0004146407,"threshold_uncertainty_score":0.009251833},"labels":[],"label_agreement":null},{"id":"W4400188223","doi":"10.1109/tec.2024.3420897","title":"Wide-Band Constant-Parameter Voltage-Behind- Reactance Model of Squirrel-Cage Induction Machines","year":2024,"lang":"en","type":"article","venue":"IEEE Transactions on Energy Conversion","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Okanagan University College; University of British Columbia, Okanagan Campus; University of British Columbia","funders":"","keywords":"Reactance; Squirrel-cage rotor; Voltage; Constant (computer programming); Constant voltage; Cage; Induction motor; Control theory (sociology); Electrical engineering; Bushing; Physics; Engineering; Computer science; Mechanical engineering; Structural engineering","score_opus":0.019468481723759517,"score_gpt":0.2240920836806382,"score_spread":0.2046236019568787,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4400188223","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.05940507,0.00074860186,0.9053952,0.00021670014,0.00009339838,0.00007861184,0.00021299168,0.0008934275,0.03295604],"genre_scores_gemma":[0.96498626,0.00062407623,0.01890421,0.00006005218,0.000036076646,0.00010576085,0.00018270143,0.00011447477,0.01498634],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9998528,0.00004090813,0.0000070802826,0.0000345468,0.000048684702,0.000016037722],"domain_scores_gemma":[0.99989915,0.00003077344,0.00002242341,0.000016429976,0.000025666992,0.000005648753],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00023002547,0.00080840633,0.00059106015,0.00037848795,0.00025431468,0.0005898476,0.0012186749,0.001017468,0.0027423408],"category_scores_gemma":[0.00036247566,0.00029855504,0.00054878544,0.00037828195,0.00046157703,0.00095638,0.00029025687,0.00061001506,0.0010287974],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000077913704,0.000051383857,0.0005610226,0.00012549746,0.00003156879,0.00025263382,0.00016228859,0.9384737,0.025915163,0.020473955,0.0010615588,0.01281334],"study_design_scores_gemma":[0.000004702465,0.000032050673,0.00014472577,0.0000052339406,0.0000047219187,0.000040058567,0.000009652652,0.9961707,0.00078097644,0.0016649808,0.0011373864,0.000004691244],"about_ca_topic_score_codex":0.001770754,"about_ca_topic_score_gemma":0.0015544521,"teacher_disagreement_score":0.0027423408,"about_ca_system_score_codex":0.00037157416,"about_ca_system_score_gemma":0.00028864417,"threshold_uncertainty_score":0.009174049},"labels":[],"label_agreement":null},{"id":"W4400233358","doi":"10.1109/iscas58744.2024.10558096","title":"High-CMRR, Operational Transconductance Amplifier for Low-Voltage Applications Based on a Degenerative Current TRAM","year":2024,"lang":"en","type":"article","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"York University","funders":"National Science Foundation","keywords":"Operational transconductance amplifier; Transconductance; Operational amplifier; Electrical engineering; Amplifier; Current (fluid); Electronic engineering; Voltage; Computer science; Engineering; CMOS; Transistor","score_opus":0.023391534458280832,"score_gpt":0.27869314949207247,"score_spread":0.2553016150337916,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4400233358","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.2620759,0.0030417722,0.6893938,0.0009103595,0.0006552654,0.00023214599,0.0003796449,0.007727775,0.035583336],"genre_scores_gemma":[0.8711193,0.000485428,0.11918225,0.00030574595,0.00013517967,0.00004985024,0.00011472966,0.00008599881,0.008521416],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99976426,0.000019926903,0.00001678303,0.00007352946,0.000098030156,0.000027423934],"domain_scores_gemma":[0.99972063,0.000041242914,0.000056171295,0.000056479843,0.000105997104,0.000019527997],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00022561049,0.00035668965,0.00021054091,0.00041793086,0.00028051942,0.00060077885,0.0014205829,0.0004818956,0.0020297638],"category_scores_gemma":[0.0005085153,0.00014624263,0.00022387566,0.0003378984,0.00031560837,0.0009650439,0.0003313914,0.00041291106,0.0010535968],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00008678166,0.000032341683,0.00023047446,0.00008587081,0.000013021578,0.00018690842,0.00008787884,0.00047716676,0.94557774,0.005089402,0.0010091913,0.0471231],"study_design_scores_gemma":[0.00004304858,0.0009831404,0.0016361354,0.00004422624,0.00006618182,0.0032448387,0.00007144369,0.03644525,0.9155287,0.0025343027,0.03934003,0.00006273922],"about_ca_topic_score_codex":0.00033816314,"about_ca_topic_score_gemma":0.001033242,"teacher_disagreement_score":0.0020297638,"about_ca_system_score_codex":0.00047716292,"about_ca_system_score_gemma":0.000312914,"threshold_uncertainty_score":0.0067902803},"labels":[],"label_agreement":null},{"id":"W4400277143","doi":"10.1109/wcnc57260.2024.10570820","title":"Energy Efficiency Optimization in RIS-assisted ISATRNs with RSMA: A Federated Deep Reinforcement Learning Approach","year":2024,"lang":"en","type":"article","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":2,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"École de Technologie Supérieure","funders":"","keywords":"Reinforcement learning; Computer science; Efficient energy use; Reinforcement; Energy (signal processing); Artificial intelligence; Materials science; Engineering; Electrical engineering; Composite material","score_opus":0.012864945634422477,"score_gpt":0.21468746423520024,"score_spread":0.20182251860077777,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4400277143","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.098316915,0.00061762973,0.8946037,0.00039708166,0.00006230069,0.000051026276,0.00004966504,0.0003538644,0.005547817],"genre_scores_gemma":[0.975717,0.00009143756,0.02213357,0.00009883091,0.000016597289,0.000043597156,0.000029673345,0.000017276943,0.0018519702],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99980384,0.000053814827,0.000007457108,0.000044248973,0.000039926923,0.00005071481],"domain_scores_gemma":[0.9995017,0.00026963232,0.00006738591,0.000024167139,0.00010171088,0.000035309426],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0006156499,0.0007438117,0.00081783114,0.00024322636,0.00023871326,0.00055986777,0.0009662497,0.0007616382,0.0011478683],"category_scores_gemma":[0.0012379374,0.00027446984,0.00030932442,0.00021788901,0.000617248,0.000595209,0.00064206653,0.00080444076,0.00014085541],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00003421326,0.000027564818,0.00026907603,0.000019698295,0.000014532219,0.000029634251,0.000014494268,0.9869357,0.0006928982,0.001233884,0.00023384577,0.010494383],"study_design_scores_gemma":[0.0000027552778,0.000012287296,0.000021886162,0.00000125031,0.0000020828775,0.0000024586475,0.0000018807775,0.9994702,0.000094129726,0.00035246927,0.000037723683,8.910035e-7],"about_ca_topic_score_codex":0.0058360035,"about_ca_topic_score_gemma":0.0058890497,"teacher_disagreement_score":0.0058360035,"about_ca_system_score_codex":0.0006968716,"about_ca_system_score_gemma":0.0008763645,"threshold_uncertainty_score":0.011604071},"labels":[],"label_agreement":null},{"id":"W4400842196","doi":"","title":"Preliminary numerical study on magnet gate in MOS FD-SOI for quantum and sensor applications","year":2024,"lang":"en","type":"other","venue":"HAL (Le Centre pour la Communication Scientifique Directe)","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Institut interdisciplinaire d'innovation technologique; Université de Sherbrooke","funders":"","keywords":"Silicon on insulator; Magnet; Quantum; Optoelectronics; Physics; Electrical engineering; Computer science; Materials science; Engineering; Quantum mechanics; Silicon","score_opus":0.015784418836510345,"score_gpt":0.2454144908845009,"score_spread":0.22963007204799055,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4400842196","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.92352974,0.000597032,0.017005261,0.0009597402,0.00017052302,0.000051576677,0.0006096063,0.00028740068,0.05678919],"genre_scores_gemma":[0.99026066,0.000110500616,0.0061059487,0.000077369674,0.000022260376,0.000017262848,0.00010404686,0.00003964369,0.0032621273],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99995446,0.0000104364,0.0000014542074,0.0000051253173,0.000015352049,0.000013214201],"domain_scores_gemma":[0.99938834,0.0003868596,0.000053458658,0.000035164154,0.00009893013,0.0000372008],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00017360786,0.0001786557,0.00030449426,0.00025959796,0.00050211314,0.0004049821,0.0005011571,0.00059292355,0.0045571127],"category_scores_gemma":[0.00084359915,0.000109816545,0.00019957361,0.00032836318,0.0003280553,0.00033687634,0.00015552167,0.0002652452,0.00017883227],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0003755475,0.00020607293,0.0043649944,0.00041282404,0.000052737385,0.00046929478,0.0001803843,0.90671635,0.031737916,0.040543426,0.005510361,0.009430056],"study_design_scores_gemma":[0.000014944582,0.00003894434,0.00062876364,0.0000071123886,0.000006041838,0.000016254959,0.000032104504,0.99631953,0.0016960704,0.0008006418,0.00043442493,0.000005087563],"about_ca_topic_score_codex":0.006505098,"about_ca_topic_score_gemma":0.009233161,"teacher_disagreement_score":0.006505098,"about_ca_system_score_codex":0.0005077626,"about_ca_system_score_gemma":0.00039431485,"threshold_uncertainty_score":0.01524502},"labels":[],"label_agreement":null},{"id":"W4401247043","doi":"10.1109/jflex.2024.3437369","title":"Simulation and Modeling of Emerging Heterojunction Transistors: Toward Rational Design and Optimization","year":2024,"lang":"en","type":"article","venue":"IEEE Journal on Flexible Electronics","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":2,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Ottawa","funders":"Natural Sciences and Engineering Research Council of Canada; National Research Foundation of Korea","keywords":"Heterojunction; Transistor; Rational design; Computer science; Systems engineering; Materials science; Engineering; Nanotechnology; Optoelectronics; Electrical engineering","score_opus":0.04493733145732321,"score_gpt":0.28566860785985343,"score_spread":0.24073127640253023,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4401247043","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.061700236,0.0086488,0.89902776,0.00091921934,0.00015439281,0.00016254681,0.0005638774,0.00061213446,0.028211044],"genre_scores_gemma":[0.7317754,0.017351968,0.2396594,0.00024732723,0.00017157085,0.0008828608,0.0010361583,0.00042345843,0.008451802],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99980384,0.00006311837,0.000008738886,0.000020644513,0.00008022676,0.000023515113],"domain_scores_gemma":[0.999767,0.00013102205,0.000019859532,0.000021294873,0.000046970963,0.000013880089],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0004588405,0.00071844214,0.0010651544,0.00037302368,0.00027694917,0.0009765755,0.0015361088,0.0011698685,0.0014170321],"category_scores_gemma":[0.0008025748,0.00043001628,0.0008223088,0.0005831542,0.00061060744,0.0007271538,0.00040312516,0.00089019455,0.00044283562],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000008656174,0.00000994697,0.00019395587,0.00008413701,0.00001538259,0.00003127174,0.00001713112,0.9850781,0.0014069089,0.009136628,0.0002213658,0.003796501],"study_design_scores_gemma":[0.0000047639346,0.0000075608255,0.00005236464,0.000010110538,0.000004613983,0.000008677073,0.0000066191983,0.99478745,0.00041959487,0.003398725,0.0012966882,0.0000028605793],"about_ca_topic_score_codex":0.0024719834,"about_ca_topic_score_gemma":0.0020481464,"teacher_disagreement_score":0.0024719834,"about_ca_system_score_codex":0.0006946642,"about_ca_system_score_gemma":0.0009309691,"threshold_uncertainty_score":0.0050401688},"labels":[],"label_agreement":null},{"id":"W4401357318","doi":"10.1109/tvlsi.2024.3435419","title":"Thresholding Decision-Directed Descent (T3D): A Tuning Solution for DDR5 DRAM DFEs","year":2024,"lang":"en","type":"article","venue":"IEEE Transactions on Very Large Scale Integration (VLSI) Systems","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":3,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McMaster University","funders":"","keywords":"Dram; Thresholding; Computer science; Embedded system; Artificial intelligence; Computer hardware; Image (mathematics)","score_opus":0.02272751414639476,"score_gpt":0.2663103058874945,"score_spread":0.24358279174109973,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4401357318","genre_codex":"methods","genre_gemma":"methods","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"methods","genre_consensus":"methods","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.015387174,0.00016790666,0.981143,0.00010259094,0.00003833638,0.000024140068,0.000028375405,0.0004856729,0.002622664],"genre_scores_gemma":[0.5740043,0.00014878088,0.42137474,0.00026059442,0.00003219423,0.00008110999,0.00013038752,0.00015541419,0.003812612],"study_design_codex":"simulation_or_modeling","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99974734,0.00005791525,0.000014409097,0.000045849698,0.00010351642,0.00003085445],"domain_scores_gemma":[0.99963796,0.00015263063,0.000037964015,0.000054004537,0.00009853334,0.000018867446],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0004564686,0.00046296394,0.00029317543,0.00020098366,0.00029050768,0.0004746997,0.00069457415,0.0005843176,0.0019229128],"category_scores_gemma":[0.0016737283,0.00021413076,0.00022888259,0.00015589641,0.00031658175,0.00039077163,0.0005797217,0.00070714415,0.00047816074],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0002640051,0.00010660023,0.0018279097,0.00015158059,0.000064095664,0.00018357667,0.00016400557,0.5473356,0.08273915,0.016095726,0.00542507,0.34564266],"study_design_scores_gemma":[0.000014371727,0.00005260129,0.00012730795,0.00000929438,0.000005990388,0.00005640104,0.0000123579675,0.9860826,0.00959783,0.0018738772,0.002158899,0.000008485752],"about_ca_topic_score_codex":0.0013027244,"about_ca_topic_score_gemma":0.0026851364,"teacher_disagreement_score":0.0019229128,"about_ca_system_score_codex":0.00033114443,"about_ca_system_score_gemma":0.00051043474,"threshold_uncertainty_score":0.0064327717},"labels":[],"label_agreement":null},{"id":"W4401443555","doi":"10.1109/tqe.2024.3441229","title":"Multidisk Clutch Optimization Using Quantum Annealing","year":2024,"lang":"en","type":"article","venue":"IEEE Transactions on Quantum Engineering","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":2,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Centre for Social Innovation","funders":"","keywords":"Quantum annealing; Clutch; Quantum; Annealing (glass); Simulated annealing; Computer science; Materials science; Mechanical engineering; Physics; Engineering; Quantum computer; Algorithm; Quantum mechanics; Metallurgy","score_opus":0.02483977132313123,"score_gpt":0.24919597990479553,"score_spread":0.2243562085816643,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4401443555","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.11647931,0.0004994418,0.8618015,0.0006599816,0.00016511299,0.0001204709,0.00009474979,0.00075389596,0.019425448],"genre_scores_gemma":[0.77527606,0.000115165756,0.21823262,0.00021690708,0.000024697203,0.00019669131,0.000094351206,0.00015480763,0.005688752],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9997377,0.000096517615,0.000009197247,0.000043544533,0.00007437854,0.000038654995],"domain_scores_gemma":[0.9992705,0.0005250733,0.0000409744,0.000065303655,0.00007149218,0.00002671452],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000763241,0.0004424344,0.00080773444,0.00039315145,0.00058088347,0.00075993664,0.0009431788,0.0011804187,0.0036411951],"category_scores_gemma":[0.0019235134,0.0003596749,0.0005063472,0.0005076956,0.0009351612,0.00081894826,0.0009096612,0.0007596735,0.00030895098],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000042073916,0.000030667983,0.00018271162,0.000029350935,0.000016296715,0.000023966091,0.000016734844,0.9784338,0.0007037698,0.01164791,0.000521448,0.008351254],"study_design_scores_gemma":[0.0000075708576,0.000011690065,0.00002970798,0.000001526883,0.0000014178764,0.000002088495,0.0000032616927,0.99756575,0.00016582932,0.002031949,0.00017740621,0.000001754096],"about_ca_topic_score_codex":0.0037817713,"about_ca_topic_score_gemma":0.0046219085,"teacher_disagreement_score":0.0037817713,"about_ca_system_score_codex":0.0009948025,"about_ca_system_score_gemma":0.0011130483,"threshold_uncertainty_score":0.012180984},"labels":[],"label_agreement":null},{"id":"W4401486145","doi":"10.1016/j.nima.2024.169729","title":"TCAD simulations of humidity-induced breakdown of silicon sensors","year":2024,"lang":"en","type":"article","venue":"Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":2,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Simon Fraser University; Carleton University; TRIUMF","funders":"European Regional Development Fund; Natural Sciences and Engineering Research Council of Canada; Agencia Estatal de Investigación; Simon Fraser University; CERN; Canada Foundation for Innovation; TRIUMF; Carleton University; U.S. Department of Energy","keywords":"Relative humidity; Materials science; Humidity; Breakdown voltage; Silicon; Optoelectronics; Electric field; Transient (computer programming); Voltage; Electrical engineering; Physics","score_opus":0.06509288214310006,"score_gpt":0.3825742256687331,"score_spread":0.31748134352563306,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4401486145","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.8455654,0.0022420508,0.034521267,0.0016909192,0.00041345746,0.00028304674,0.013007249,0.0011736387,0.101103],"genre_scores_gemma":[0.9775833,0.0006000038,0.0131748505,0.00027715322,0.000037911537,0.0004072329,0.0026264398,0.00020537907,0.0050877584],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9997305,0.000049002134,0.000011410371,0.000025121366,0.00011138194,0.000072405],"domain_scores_gemma":[0.9986926,0.000701239,0.0000607961,0.000072619216,0.0004049324,0.00006787491],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00044514902,0.00060294085,0.0011688159,0.00076273567,0.00079799653,0.00062604144,0.0016075631,0.0018937511,0.007941112],"category_scores_gemma":[0.002726507,0.00075178227,0.00078764715,0.0013822793,0.00054142944,0.0006411536,0.00039543284,0.001014037,0.00055850705],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0000626114,0.00004404518,0.0011112437,0.00015508769,0.00003247747,0.000105173225,0.00008092663,0.9901506,0.0010411247,0.0034592734,0.0018312945,0.0019261993],"study_design_scores_gemma":[0.0000229169,0.000021297825,0.00039490435,0.000014327879,0.000007268505,0.0000117581185,0.000027066493,0.9972914,0.00041548294,0.00063986256,0.0011455802,0.000008196975],"about_ca_topic_score_codex":0.023759343,"about_ca_topic_score_gemma":0.018798344,"teacher_disagreement_score":0.023759343,"about_ca_system_score_codex":0.0015093172,"about_ca_system_score_gemma":0.0019329893,"threshold_uncertainty_score":0.047242105},"labels":[],"label_agreement":null},{"id":"W4402467279","doi":"10.1088/1402-4896/ad7a27","title":"Physics simulation capabilities of LLMs","year":2024,"lang":"en","type":"article","venue":"Physica Scripta","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":5,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Canadian Institute for Theoretical Astrophysics; University of Toronto","funders":"Tamkeen; New York University Abu Dhabi","keywords":"Physics","score_opus":0.026466174717153776,"score_gpt":0.26255499249957776,"score_spread":0.23608881778242397,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4402467279","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.62285954,0.0008499335,0.21770458,0.0033110052,0.00052585703,0.0007494638,0.007860926,0.07369888,0.072439834],"genre_scores_gemma":[0.84741265,0.00021404347,0.13090037,0.000578139,0.000044907898,0.0005161422,0.010255267,0.0039572315,0.006121241],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99620146,0.0015031716,0.00033884877,0.0004124462,0.0013196409,0.00022443556],"domain_scores_gemma":[0.9811477,0.0105719315,0.00073253404,0.0042868922,0.0026003676,0.00066052424],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0038566086,0.00105789,0.0005718392,0.000996125,0.0005655996,0.0020058602,0.0025019227,0.0017893373,0.01229262],"category_scores_gemma":[0.029709565,0.0005413309,0.0011696172,0.0007459028,0.0010289174,0.0022489468,0.003491118,0.0021473577,0.0033103782],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.001676455,0.0016140442,0.023326129,0.0021566025,0.00023849783,0.0005508753,0.0017820025,0.5521893,0.022185488,0.04047461,0.07174474,0.28206125],"study_design_scores_gemma":[0.00021312987,0.00038865858,0.0021976107,0.00016607279,0.0000366423,0.00011893695,0.00032473067,0.908341,0.027003724,0.025478281,0.035676908,0.000054319848],"about_ca_topic_score_codex":0.0021808976,"about_ca_topic_score_gemma":0.0023871106,"teacher_disagreement_score":0.01229262,"about_ca_system_score_codex":0.0011664074,"about_ca_system_score_gemma":0.0016234855,"threshold_uncertainty_score":0.041122913},"labels":[],"label_agreement":null},{"id":"W4402474950","doi":"10.1109/ccece59415.2024.10667181","title":"Towards A Computer-Aided Design Tool Dedicated to Foundry Open Gate Junction Field-Effect Transistor Sensor’s Process","year":2024,"lang":"en","type":"article","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"York University","funders":"","keywords":"Foundry; Transistor; Process (computing); Computer science; Field-effect transistor; Process design; Field (mathematics); Electrical engineering; Engineering; Electronic engineering; Embedded system; Work in process; Mechanical engineering; Voltage","score_opus":0.028130597107407253,"score_gpt":0.295303906740228,"score_spread":0.26717330963282077,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4402474950","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.010078683,0.00019396817,0.97329664,0.00016769647,0.00010011724,0.00012289711,0.00038308906,0.009414146,0.00624271],"genre_scores_gemma":[0.12146752,0.00045762918,0.8657779,0.0001881852,0.000028346083,0.000622246,0.0010318048,0.0015654897,0.008860839],"study_design_codex":"simulation_or_modeling","study_design_gemma":"not_applicable","domain_scores_codex":[0.99946445,0.000054344902,0.00001915689,0.000058250214,0.00037289652,0.00003086679],"domain_scores_gemma":[0.99945813,0.00020192532,0.000045080473,0.0000720208,0.0002023639,0.00002052397],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00076522335,0.00065989885,0.00058065285,0.00047109846,0.0003279474,0.0010079459,0.0015053643,0.0009885535,0.00899781],"category_scores_gemma":[0.0016538484,0.00044252927,0.0007173892,0.00032039388,0.00025520416,0.0006568816,0.00053254294,0.0010170431,0.002591079],"study_design_candidate":"not_applicable","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0002744405,0.00029457986,0.0029622158,0.0014210792,0.00021050432,0.0006229354,0.0006205905,0.37403303,0.2758009,0.030077584,0.02452593,0.28915626],"study_design_scores_gemma":[0.00005969481,0.00014144856,0.00048308115,0.00006454462,0.000046834848,0.00032677897,0.000048080994,0.8150496,0.105344206,0.0042237984,0.07416474,0.00004717927],"about_ca_topic_score_codex":0.001104203,"about_ca_topic_score_gemma":0.001572141,"teacher_disagreement_score":0.00899781,"about_ca_system_score_codex":0.0005678309,"about_ca_system_score_gemma":0.0012986388,"threshold_uncertainty_score":0.030100644},"labels":[],"label_agreement":null},{"id":"W4402475673","doi":"10.1109/ccece59415.2024.10667282","title":"Enhancing Thermal Security of 3D-SiP Systems through Thermal Digital Twin (TDT)","year":2024,"lang":"en","type":"article","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":4,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Université du Québec en Outaouais","funders":"","keywords":"Thermal; Computer science; Computer security; Physics; Thermodynamics","score_opus":0.013667956696404495,"score_gpt":0.2349835526903856,"score_spread":0.2213155959939811,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4402475673","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.26239163,0.0003297378,0.7307731,0.00014745543,0.0000833093,0.000050437928,0.00012311753,0.0016394901,0.004461699],"genre_scores_gemma":[0.92382205,0.00020004377,0.07511064,0.000033209697,0.000008444201,0.000031114607,0.00006265095,0.000090189234,0.00064173696],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99983823,0.000032855776,0.000008792447,0.000033045857,0.000073148105,0.000013859385],"domain_scores_gemma":[0.9997665,0.00008427455,0.000046128294,0.000050577924,0.00004004983,0.000012465303],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0003178289,0.0005233385,0.00023774587,0.00030117462,0.00019396906,0.00045855716,0.00031684776,0.00031074762,0.00097310235],"category_scores_gemma":[0.0007948535,0.00029727264,0.0002973588,0.0002257495,0.00043811035,0.0008604546,0.00041424128,0.00036779442,0.0001721592],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00019314184,0.000083729254,0.007828111,0.00029004342,0.000065526656,0.00019727004,0.00031265817,0.6175164,0.2810278,0.010071048,0.00097323145,0.081441045],"study_design_scores_gemma":[0.0000041896374,0.00009730832,0.00075177156,0.000007667985,0.000012097328,0.000059029204,0.000023586914,0.93530196,0.061389055,0.0009855239,0.0013515367,0.000016328146],"about_ca_topic_score_codex":0.00062957074,"about_ca_topic_score_gemma":0.0010926921,"teacher_disagreement_score":0.00097310235,"about_ca_system_score_codex":0.00035090462,"about_ca_system_score_gemma":0.00043951077,"threshold_uncertainty_score":0.0032553673},"labels":[],"label_agreement":null},{"id":"W4402742600","doi":"10.1109/lwc.2024.3466246","title":"Bandwidth and Task Flow Control in Stochastic Relay-Assisted MEC","year":2024,"lang":"en","type":"article","venue":"IEEE Wireless Communications Letters","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of British Columbia","funders":"Science and Engineering Research Council; University of Tabriz","keywords":"Relay; Computer science; Bandwidth (computing); Computer network; Task (project management); Bandwidth allocation; Flow control (data); Engineering","score_opus":0.016947509116675325,"score_gpt":0.2419682128034077,"score_spread":0.22502070368673235,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4402742600","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.10785146,0.0008542443,0.88500345,0.00051116175,0.00008856145,0.00005698979,0.00010566254,0.00029093068,0.005237496],"genre_scores_gemma":[0.98918694,0.00015800151,0.009225732,0.00005595865,0.000020901807,0.0000351516,0.000024240831,0.00002887116,0.0012641833],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9990451,0.0003475343,0.000031883068,0.00017726279,0.00015693084,0.00024121418],"domain_scores_gemma":[0.99625105,0.0027928571,0.00033673015,0.00013040884,0.00032248316,0.00016655572],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.001753574,0.0010356575,0.001046832,0.00054488285,0.00049184024,0.0012051975,0.0012175727,0.0009920798,0.0018335041],"category_scores_gemma":[0.00632536,0.00045200333,0.00040249634,0.0005266811,0.0011140588,0.0012161637,0.0010627832,0.00090795656,0.00018476289],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00007054042,0.000019244959,0.00016717272,0.000025887612,0.00001206405,0.00003982502,0.000025387117,0.987363,0.0009526963,0.007624846,0.00019581728,0.0035035643],"study_design_scores_gemma":[0.0000028854897,0.000008639773,0.000031340864,0.0000014351937,0.000001953029,0.0000042460047,0.000004085559,0.99830925,0.000108632696,0.0014780407,0.000047567082,0.0000019054252],"about_ca_topic_score_codex":0.00493248,"about_ca_topic_score_gemma":0.0029602367,"teacher_disagreement_score":0.00493248,"about_ca_system_score_codex":0.0012976688,"about_ca_system_score_gemma":0.0010126889,"threshold_uncertainty_score":0.009807587},"labels":[],"label_agreement":null},{"id":"W4402769705","doi":"10.1109/jsen.2024.3457744","title":"Sub-mK, On-Package Temperature Control for High-Performance Microsystem Applications","year":2024,"lang":"en","type":"article","venue":"IEEE Sensors Journal","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Simon Fraser University","funders":"Mitacs","keywords":"Microsystem; Temperature control; Temperature measurement; Materials science; Computer science; Optoelectronics; Electronic engineering; Engineering; Mechanical engineering; Physics; Nanotechnology; Thermodynamics","score_opus":0.009745432389880139,"score_gpt":0.23059283702966965,"score_spread":0.22084740463978952,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4402769705","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.42652154,0.003809986,0.5470983,0.00046290114,0.0006164682,0.00029373265,0.00051093125,0.0047427528,0.01594341],"genre_scores_gemma":[0.9099702,0.000742617,0.0838966,0.00013377095,0.00008868043,0.00007899475,0.00012260702,0.0002759376,0.00469049],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9996855,0.000024025372,0.0000096230115,0.00008059831,0.00017675853,0.000023499731],"domain_scores_gemma":[0.9996947,0.000045771052,0.000088701156,0.000058085323,0.00010026553,0.000012620888],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0002455752,0.0005542905,0.0003059297,0.00028040312,0.00022349115,0.00054375053,0.00058786955,0.00034354834,0.0016772107],"category_scores_gemma":[0.00059373135,0.00025229566,0.00019210254,0.00025495148,0.00031309543,0.00060521765,0.00026072207,0.00047928467,0.00069003826],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00007180802,0.000029105791,0.00044066177,0.00014911468,0.000013478489,0.000044914585,0.00004592243,0.0012628332,0.97486305,0.00046563867,0.00085772027,0.021755623],"study_design_scores_gemma":[0.000011690197,0.00027605353,0.0026477296,0.000012652829,0.000030612533,0.00020747985,0.000033977696,0.016749015,0.97142845,0.00022624024,0.008353791,0.00002241026],"about_ca_topic_score_codex":0.00045590155,"about_ca_topic_score_gemma":0.0014982497,"teacher_disagreement_score":0.0016772107,"about_ca_system_score_codex":0.0004505266,"about_ca_system_score_gemma":0.00035234436,"threshold_uncertainty_score":0.0056108236},"labels":[],"label_agreement":null},{"id":"W4402921778","doi":"10.1002/adts.202400607","title":"A Random Forest Model for Predicting and Analyzing the Performance of CNT TFET with Highly Doped Pockets","year":2024,"lang":"en","type":"article","venue":"Advanced Theory and Simulations","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":7,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Doping; Random forest; Materials science; Nanotechnology; Environmental science; Computer science; Optoelectronics; Artificial intelligence","score_opus":0.010894840857075797,"score_gpt":0.2427175306592828,"score_spread":0.23182268980220702,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4402921778","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.29676583,0.00086253264,0.6980911,0.0003071492,0.0000669095,0.000074579264,0.0006937786,0.0011633624,0.0019747966],"genre_scores_gemma":[0.94109625,0.00020294184,0.05626627,0.00005892768,0.000027550923,0.00009568921,0.0006368774,0.000046051544,0.0015693456],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9998492,0.000048041722,0.0000063776515,0.000038702317,0.000032322507,0.000025296638],"domain_scores_gemma":[0.9992741,0.0004947729,0.00005255955,0.000029818115,0.00012907365,0.000019721694],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00089357287,0.0005815776,0.00062592566,0.00056138885,0.00021280881,0.00033225882,0.00073613244,0.00081028155,0.0008799784],"category_scores_gemma":[0.0015929162,0.00018800488,0.0006705668,0.00043474944,0.00021223273,0.0004178283,0.00015268722,0.00046040025,0.0003016292],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00004224765,0.000026016285,0.0010677307,0.000012707191,0.000014102461,0.000023643184,0.000004862223,0.986865,0.0009959181,0.00040323124,0.00031435982,0.010230151],"study_design_scores_gemma":[0.0000013371389,0.0000064849683,0.000095776064,9.445563e-7,0.0000015836121,0.0000032730818,6.574029e-7,0.999579,0.00012669392,0.00015063955,0.000032357377,0.0000012574515],"about_ca_topic_score_codex":0.009528316,"about_ca_topic_score_gemma":0.006845512,"teacher_disagreement_score":0.009528316,"about_ca_system_score_codex":0.00041384363,"about_ca_system_score_gemma":0.00041296362,"threshold_uncertainty_score":0.018945694},"labels":[],"label_agreement":null},{"id":"W4403072239","doi":"10.1049/rpg2.13088","title":"Exploiting the determinant factors on the available flexibility area of ADNs at TSO‐DSO interface","year":2024,"lang":"en","type":"article","venue":"IET Renewable Power Generation","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":4,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Hydro-Québec; Université Laval","funders":"Science Foundation Ireland","keywords":"Flexibility (engineering); Interface (matter); Computer science; Embedded system; Computer hardware; Operating system; Mathematics; Statistics","score_opus":0.07255618620120004,"score_gpt":0.2662489636754837,"score_spread":0.19369277747428365,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4403072239","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.6830441,0.0002356487,0.2933331,0.00035764105,0.000028334951,0.00004609012,0.00020390059,0.000096215095,0.022654936],"genre_scores_gemma":[0.9964553,0.00003358259,0.0028726617,0.000008247799,0.0000023827922,0.000008248381,0.000021784941,0.000005935706,0.0005918111],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99983406,0.00006494308,0.000004429394,0.000021710412,0.000038386643,0.000036460948],"domain_scores_gemma":[0.99945813,0.00035860896,0.0000703658,0.00002750796,0.000049931477,0.00003536194],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0004727634,0.00040212454,0.00026494949,0.0002805933,0.00028385114,0.00072399667,0.00036043057,0.00031797015,0.0019888112],"category_scores_gemma":[0.001356823,0.00024162988,0.0003721666,0.00041246158,0.00038677937,0.0007937957,0.0004643429,0.00047228302,0.00007524734],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000020054198,0.000012619831,0.0013845324,0.000012106386,0.0000071343948,0.00004693153,0.000009866735,0.99210817,0.0007767397,0.0030514826,0.00010812225,0.002462134],"study_design_scores_gemma":[0.0000013398387,0.000010879176,0.00047512355,0.0000027410472,0.0000032592582,0.000008526939,0.000015860449,0.9979455,0.00025368878,0.001167039,0.0001135664,0.0000024659864],"about_ca_topic_score_codex":0.007590103,"about_ca_topic_score_gemma":0.0077481833,"teacher_disagreement_score":0.007590103,"about_ca_system_score_codex":0.00057473383,"about_ca_system_score_gemma":0.00048638266,"threshold_uncertainty_score":0.015091896},"labels":[],"label_agreement":null},{"id":"W4404201311","doi":"10.1016/j.nima.2024.170045","title":"Analysis of MOS capacitor with p layer with TCAD simulation","year":2024,"lang":"en","type":"article","venue":"Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":2,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Carleton University","funders":"Natural Sciences and Engineering Research Council of Canada; Alexander von Humboldt-Stiftung; Canada Foundation for Innovation; Agencia Estatal de Investigación; Ministerio de Ciencia, Innovación y Universidades; U.S. Department of Energy","keywords":"Materials science; Layer (electronics); Capacitor; Optoelectronics; Engineering physics; Electrical engineering; Engineering; Nanotechnology; Voltage","score_opus":0.05604296761926753,"score_gpt":0.373093141807106,"score_spread":0.3170501741878385,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4404201311","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.637339,0.0050391625,0.1466164,0.0024677997,0.0007997787,0.00024940798,0.007195089,0.0043031746,0.19599015],"genre_scores_gemma":[0.9801149,0.00041558492,0.012191298,0.00017447324,0.000045452904,0.000077944766,0.0004935233,0.00015765424,0.0063292095],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.999858,0.000017891176,0.00000467325,0.000016251184,0.00006899581,0.000034121967],"domain_scores_gemma":[0.9995999,0.00017529205,0.000034226203,0.000036981484,0.00013801947,0.000015636115],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00015922375,0.0004626843,0.00054652675,0.0007159731,0.00058127084,0.00048778483,0.0014452828,0.0010988902,0.00944822],"category_scores_gemma":[0.0010537831,0.00036769506,0.0006285117,0.00093356456,0.0002948118,0.00086582184,0.00020110539,0.00044035685,0.00063702697],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000075782606,0.000033822336,0.0007454829,0.00025833835,0.000059818256,0.00032215056,0.000046171008,0.97561884,0.003372838,0.007875111,0.004445975,0.007145577],"study_design_scores_gemma":[0.000010112096,0.000015726175,0.00020322236,0.000009755463,0.000012775879,0.000023435417,0.000013450758,0.99691343,0.0009037503,0.0009379493,0.0009509511,0.00000541719],"about_ca_topic_score_codex":0.0234311,"about_ca_topic_score_gemma":0.024623536,"teacher_disagreement_score":0.0234311,"about_ca_system_score_codex":0.0013345489,"about_ca_system_score_gemma":0.0013132321,"threshold_uncertainty_score":0.046589434},"labels":[],"label_agreement":null},{"id":"W4404239104","doi":"10.1109/tvt.2024.3492183","title":"Digital Twin-Driven VCTS Control: An Iterative Apporach Using Model-Based Reinforcement Learning","year":2024,"lang":"en","type":"article","venue":"IEEE Transactions on Vehicular Technology","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":7,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Carleton University","funders":"Natural Science Foundation of Beijing Municipality; National Natural Science Foundation of China","keywords":"Reinforcement learning; Computer science; Control (management); Iterative method; Artificial intelligence; Algorithm","score_opus":0.016986651177867712,"score_gpt":0.2505065242179267,"score_spread":0.23351987304005897,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4404239104","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.023806458,0.000108380365,0.9723145,0.000119769495,0.000039869996,0.00006338142,0.000021424212,0.0005203736,0.0030058336],"genre_scores_gemma":[0.95676965,0.00006159191,0.041193247,0.00009007805,0.000017881379,0.000096145624,0.00005619598,0.000033320204,0.0016818118],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99949586,0.00011092884,0.000024771667,0.00013770499,0.0001554483,0.00007519118],"domain_scores_gemma":[0.9993349,0.00026768766,0.000100881545,0.00008252586,0.00015262773,0.000061432205],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00092543376,0.00066956994,0.00065938145,0.0003557707,0.00036461075,0.0007735198,0.0014104258,0.00066582795,0.0014299824],"category_scores_gemma":[0.0019945283,0.00034323896,0.00042355273,0.00031353452,0.0009864672,0.0007128474,0.0016398192,0.00092346483,0.00019654943],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00007098708,0.000051300052,0.000661415,0.000039785147,0.000027088972,0.00005680586,0.0000700273,0.9531829,0.0029337942,0.005297655,0.00051826733,0.037089914],"study_design_scores_gemma":[0.000004424682,0.00002440022,0.000038872295,0.0000024829096,0.0000028001828,0.0000066488324,0.0000027923745,0.9986733,0.0003694363,0.0006271177,0.0002449814,0.000002790495],"about_ca_topic_score_codex":0.0096629495,"about_ca_topic_score_gemma":0.006356013,"teacher_disagreement_score":0.0096629495,"about_ca_system_score_codex":0.0006735974,"about_ca_system_score_gemma":0.0013433723,"threshold_uncertainty_score":0.019213438},"labels":[],"label_agreement":null},{"id":"W4404740820","doi":"10.1109/redw61286.2024.10759260","title":"Analysis of Threshold Voltage Options on Flip-Flop SEU Performance at GF 12-nm FinFET Node","year":2024,"lang":"en","type":"article","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Saskatchewan","funders":"","keywords":"Flip-flop; Node (physics); Threshold voltage; Voltage; Optoelectronics; Materials science; Computer science; Electrical engineering; Electronic engineering; CMOS; Physics; Engineering; Transistor","score_opus":0.023480149745132673,"score_gpt":0.24784320769256943,"score_spread":0.22436305794743674,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4404740820","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9973961,0.00021148183,0.0010548334,0.00003164883,0.000011065447,0.0000069903012,0.00020147394,0.000076181095,0.0010102608],"genre_scores_gemma":[0.9991059,0.000055169858,0.00030675114,0.000006737808,0.0000035330954,0.0000044988897,0.00005723042,0.000009330731,0.0004507705],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99980944,0.000018404895,0.000010526762,0.00005082452,0.000047740985,0.00006311807],"domain_scores_gemma":[0.99932706,0.00032716425,0.00009909384,0.000047465735,0.000161622,0.000037522394],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00016069713,0.00031268346,0.00026956448,0.00035121752,0.00019897433,0.00028734625,0.00044130321,0.0004523799,0.0020447876],"category_scores_gemma":[0.0006423802,0.00014945712,0.00020067192,0.00031566762,0.00019534846,0.00042052468,0.00013797883,0.00016894472,0.00034439962],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0013507766,0.0001254929,0.015274582,0.00020433674,0.0000984836,0.0009625202,0.00016963035,0.035040326,0.9256869,0.0006795987,0.00066675444,0.01974066],"study_design_scores_gemma":[0.00005847943,0.0051030945,0.058734287,0.00006714349,0.00021112077,0.0009365306,0.00026045358,0.10821376,0.8239015,0.0004397647,0.0020037163,0.000070184615],"about_ca_topic_score_codex":0.001094908,"about_ca_topic_score_gemma":0.00255595,"teacher_disagreement_score":0.0020447876,"about_ca_system_score_codex":0.00037611852,"about_ca_system_score_gemma":0.00015711624,"threshold_uncertainty_score":0.006840527},"labels":[],"label_agreement":null},{"id":"W4404815995","doi":"10.1002/0471654507.erfme209","title":"Tunnel Devices","year":2005,"lang":"en","type":"other","venue":"Encyclopedia of RF and Microwave Engineering","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Toronto","funders":"","keywords":"Computer science","score_opus":0.005416237765771544,"score_gpt":0.19403167353182862,"score_spread":0.18861543576605708,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4404815995","genre_codex":"other","genre_gemma":"other","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"other","genre_consensus":"other","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.09679087,0.02714136,0.10719355,0.0019840125,0.0042213914,0.0006832419,0.0054652654,0.005526765,0.75099343],"genre_scores_gemma":[0.62431926,0.015176867,0.051503573,0.0013531161,0.00040803503,0.0006537793,0.0037709316,0.0005758687,0.30223855],"study_design_codex":"theoretical_or_conceptual","study_design_gemma":"not_applicable","domain_scores_codex":[0.99976474,0.000015361655,0.0000103031425,0.000044920078,0.000112664864,0.000052069503],"domain_scores_gemma":[0.99980444,0.000022379669,0.000021753496,0.000032447188,0.000094995616,0.000023905672],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00017920797,0.0004638523,0.0004574552,0.0008399496,0.0006706029,0.0015260319,0.0010934616,0.0008730224,0.026384914],"category_scores_gemma":[0.00045082238,0.00018139285,0.0003598553,0.00079504546,0.0003269927,0.0018749054,0.001326853,0.0007505843,0.008488979],"study_design_candidate":"not_applicable","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00041073386,0.0002847,0.00081907446,0.0020775723,0.00007543274,0.0013587901,0.0004680437,0.0020363491,0.18231618,0.3617978,0.18149526,0.26685998],"study_design_scores_gemma":[0.000085107626,0.0003587054,0.0005592628,0.00038489714,0.00006918205,0.0031844673,0.0001869915,0.0076099313,0.11180449,0.021588529,0.85407263,0.000095821946],"about_ca_topic_score_codex":0.0003520848,"about_ca_topic_score_gemma":0.0006140987,"teacher_disagreement_score":0.026384914,"about_ca_system_score_codex":0.00055533304,"about_ca_system_score_gemma":0.00028084646,"threshold_uncertainty_score":0.08826637},"labels":[],"label_agreement":null},{"id":"W4405564754","doi":"10.1149/ma2024-02201829mtgabs","title":"Notched Gate and Graded Gate Oxide Processing for Reduced Capacitance Application in RF MOSFETs","year":2024,"lang":"en","type":"article","venue":"ECS Meeting Abstracts","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":true,"ca_institutions":"","funders":"","keywords":"Materials science; Gate oxide; Capacitance; Optoelectronics; Oxide; Electrical engineering; Voltage; Engineering; Chemistry; Transistor; Metallurgy; Electrode","score_opus":0.020002487597013008,"score_gpt":0.25816772379400454,"score_spread":0.23816523619699154,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4405564754","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9663055,0.0017716173,0.026239013,0.00010023359,0.000064686545,0.00004262594,0.0002773496,0.00015772071,0.00504123],"genre_scores_gemma":[0.9680008,0.00061379746,0.02830326,0.00006347831,0.00001984473,0.000017613795,0.00015670001,0.000025841515,0.002798621],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99996734,0.0000017515525,0.0000013435933,0.000008164246,0.00001500435,0.000006459066],"domain_scores_gemma":[0.9999703,0.0000036121435,0.0000102119875,0.000004598463,0.0000072313765,0.0000039354613],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000044869335,0.0001519868,0.000114413306,0.00009976465,0.000054804437,0.0001962704,0.0003152535,0.00016605573,0.0005030629],"category_scores_gemma":[0.00006535891,0.000062927174,0.000092686,0.000090868576,0.00011688345,0.00016439977,0.0001433752,0.00013540995,0.00018034947],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000016958184,0.000006870019,0.00009381785,0.000030592633,0.0000028734307,0.00003692066,0.000011182494,0.00037462809,0.9961111,0.00045140795,0.000064175285,0.0027994777],"study_design_scores_gemma":[0.000025504729,0.0005005888,0.0035787888,0.0000119330725,0.00002408968,0.00029933997,0.000029481478,0.00924799,0.97627175,0.00081614003,0.009178822,0.00001565654],"about_ca_topic_score_codex":0.000334839,"about_ca_topic_score_gemma":0.0011004882,"teacher_disagreement_score":0.0005030629,"about_ca_system_score_codex":0.00022853304,"about_ca_system_score_gemma":0.00011506342,"threshold_uncertainty_score":0.0016829371},"labels":[],"label_agreement":null},{"id":"W4405702526","doi":"10.1007/978-981-97-7506-4_7","title":"Charge Based Compact Modelling of Gate Leakage Current","year":2024,"lang":"en","type":"book-chapter","venue":"Springer tracts in electrical and electronics engineering","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McMaster University","funders":"","keywords":"Leakage (economics); Optoelectronics; Materials science; Electrical engineering; Current (fluid); Charge (physics); Computer science; Engineering physics; Electronic engineering; Physics; Engineering","score_opus":0.022326097950338963,"score_gpt":0.21663283817451973,"score_spread":0.19430674022418076,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4405702526","genre_codex":"methods","genre_gemma":"methods","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"methods","genre_consensus":"methods","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.035139855,0.005329939,0.89526194,0.000418801,0.0003891531,0.000095360854,0.0006200058,0.0015706873,0.06117428],"genre_scores_gemma":[0.8967138,0.003223201,0.051860537,0.000315299,0.00020079159,0.00016628247,0.00057813834,0.0006809991,0.046260953],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9998807,0.00002163309,0.000005441398,0.000020106418,0.000057685596,0.0000143720135],"domain_scores_gemma":[0.9997595,0.000106996864,0.000020558567,0.000045672637,0.000059264457,0.000008048394],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00018578256,0.0006981203,0.00079663843,0.00041489513,0.00024367924,0.0013299324,0.0018229497,0.0014795638,0.0037229958],"category_scores_gemma":[0.0008260986,0.000319088,0.00070229324,0.0005151476,0.00039388015,0.0018303127,0.00042542384,0.0006133275,0.0014339109],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00007044808,0.000043924796,0.00016763975,0.0003382404,0.000059143244,0.00021489106,0.000107760214,0.86819386,0.03392849,0.068136506,0.0030924857,0.025646564],"study_design_scores_gemma":[0.0000032983269,0.000013406032,0.00006701558,0.000010889229,0.000009324307,0.000050199822,0.0000052711734,0.9892077,0.00208098,0.0063823713,0.0021644225,0.0000050314343],"about_ca_topic_score_codex":0.0018344468,"about_ca_topic_score_gemma":0.0017954183,"teacher_disagreement_score":0.0037229958,"about_ca_system_score_codex":0.0008908623,"about_ca_system_score_gemma":0.00033064757,"threshold_uncertainty_score":0.012454689},"labels":[],"label_agreement":null},{"id":"W44062413","doi":"10.1007/978-1-4614-0481-1_3","title":"Advanced Theory of TCAD Device Simulation","year":2011,"lang":"en","type":"book-chapter","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":2,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Crosslight Software (Canada)","funders":"","keywords":"Computer science","score_opus":0.04590639452221756,"score_gpt":0.24556960588896307,"score_spread":0.1996632113667455,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W44062413","genre_codex":"methods","genre_gemma":"methods","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"methods","genre_consensus":"methods","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.0014735269,0.013502822,0.8603508,0.0013746953,0.0022591462,0.00010398644,0.0012955826,0.0025246977,0.11711481],"genre_scores_gemma":[0.098997325,0.028738515,0.7306023,0.0016506154,0.0013227043,0.0010699385,0.004184772,0.002577282,0.1308564],"study_design_codex":"theoretical_or_conceptual","study_design_gemma":"theoretical_or_conceptual","domain_scores_codex":[0.99955744,0.000071563874,0.000021029447,0.000033397675,0.00028854352,0.00002803326],"domain_scores_gemma":[0.9994351,0.00022848119,0.00001172979,0.00012370702,0.00018299842,0.000018012326],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00044231585,0.00071402057,0.0011748099,0.0012037473,0.00055231096,0.001717903,0.0024901645,0.0012624471,0.012769319],"category_scores_gemma":[0.0018281552,0.00078692095,0.0009226952,0.0017346216,0.000777166,0.001333182,0.000861377,0.0027569667,0.0075006285],"study_design_candidate":"theoretical_or_conceptual","study_design_consensus":"theoretical_or_conceptual","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000029670027,0.00003924179,0.00018816022,0.0005111789,0.00006229424,0.000112134025,0.00009905584,0.16377802,0.0023454055,0.6170382,0.08768533,0.12811135],"study_design_scores_gemma":[0.000018334147,0.000012554548,0.0001386212,0.00013961225,0.000017753227,0.00012644734,0.000013270329,0.50408506,0.0016714291,0.33186808,0.16187592,0.000032764543],"about_ca_topic_score_codex":0.00249011,"about_ca_topic_score_gemma":0.0031969033,"teacher_disagreement_score":0.012769319,"about_ca_system_score_codex":0.0010614586,"about_ca_system_score_gemma":0.0011398727,"threshold_uncertainty_score":0.042717576},"labels":[],"label_agreement":null},{"id":"W4406265084","doi":"10.1109/ifetc61155.2024.10771859","title":"Low-Power CMOS-like Digital Circuits on Flexible Substrates","year":2024,"lang":"en","type":"article","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"CMOS; Electronic circuit; Digital electronics; Integrated injection logic; Low-power electronics; Logic gate; Computer science; Power (physics); Electrical engineering; Ultra low power; Electronic engineering; Optoelectronics; Power consumption; Materials science; Pass transistor logic; Engineering; Physics","score_opus":0.015336050774265473,"score_gpt":0.2347661308811741,"score_spread":0.21943008010690862,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4406265084","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.35784766,0.018755956,0.49436304,0.001197384,0.000523751,0.0002450714,0.0009175896,0.0033939406,0.12275556],"genre_scores_gemma":[0.8834878,0.0067880847,0.0899194,0.00030275862,0.00014181407,0.0000561331,0.00041886413,0.00013808391,0.018746933],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99992657,0.0000045192123,0.0000046259543,0.000013683576,0.000040160317,0.000010354539],"domain_scores_gemma":[0.9999485,0.000015236292,0.000011898796,0.000009234865,0.000011520244,0.0000035654882],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00004947343,0.0002112306,0.00018233064,0.00014724827,0.000108977736,0.00047260098,0.00043044874,0.0002936174,0.003301239],"category_scores_gemma":[0.0001906484,0.00010103335,0.00013856978,0.00030767062,0.000124029,0.0007238214,0.00017949099,0.0002570214,0.0010873066],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00008297364,0.000034714136,0.00034998346,0.00047428848,0.000028921355,0.00034253093,0.00006480285,0.0044512386,0.82890296,0.018023314,0.0033053537,0.14393894],"study_design_scores_gemma":[0.000057012858,0.00070088,0.0019244731,0.00012836925,0.00006889358,0.0013444966,0.00007801203,0.07378699,0.76143515,0.011263716,0.14917657,0.000035428322],"about_ca_topic_score_codex":0.00018252422,"about_ca_topic_score_gemma":0.0003879605,"teacher_disagreement_score":0.003301239,"about_ca_system_score_codex":0.00023809996,"about_ca_system_score_gemma":0.00012792887,"threshold_uncertainty_score":0.011043727},"labels":[],"label_agreement":null},{"id":"W4406652279","doi":"10.1016/b978-0-7506-0132-0.50006-6","title":"10.1016/b978-0-7506-0132-0.50006-6","year":2000,"lang":"en","type":"book-chapter","venue":"Time to knit","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":false,"route_ca_aff":false,"route_ca_fund":false,"route_ca_venue":true,"route_about_ca":false,"ca_institutions":"","funders":"","keywords":"Transistor; Electronic circuit; Materials science; Electrical engineering; Optoelectronics; Electronic engineering; Engineering; Voltage","score_opus":0.010386557816018714,"score_gpt":0.17259107261880421,"score_spread":0.1622045148027855,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4406652279","genre_codex":"other","genre_gemma":"other","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"other","genre_consensus":"other","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.00021485747,0.00060216617,0.0014671343,0.000280154,0.00022186791,0.00004853489,0.00062477915,0.0010666838,0.9954737],"genre_scores_gemma":[0.00053539325,0.000356085,0.00052908564,0.00011156591,0.000043475702,0.000034832177,0.0004437064,0.00023478905,0.99771094],"study_design_codex":"design_other","study_design_gemma":"not_applicable","domain_scores_codex":[0.9995592,0.000022853996,0.00002534696,0.00015627542,0.00016129225,0.0000749468],"domain_scores_gemma":[0.99854076,0.00045333462,0.000098525394,0.00020182291,0.00030451574,0.000401007],"candidate_categories":["insufficient_payload"],"consensus_categories":["insufficient_payload"],"category_scores_codex":[0.0007821762,0.001981168,0.0013390809,0.0018691116,0.0012607516,0.0041770497,0.0025773176,0.0036357827,0.97186804],"category_scores_gemma":[0.0013006254,0.00079100486,0.00085113157,0.0019647765,0.0010772768,0.004376145,0.0025291436,0.0021389967,0.9869593],"study_design_candidate":"not_applicable","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00013315887,0.00010335847,0.00031835434,0.00045370555,0.000019169493,0.0001176233,0.000073105606,0.00031762468,0.0036944777,0.006397856,0.35982677,0.6285448],"study_design_scores_gemma":[0.000013756543,0.000039674178,0.00037157213,0.00018772228,0.0000071912114,0.00019119417,0.000057637302,0.00012041503,0.0004089555,0.00094847626,0.99764204,0.000011375768],"about_ca_topic_score_codex":0.0022433035,"about_ca_topic_score_gemma":0.0023271923,"teacher_disagreement_score":0.028131962,"about_ca_system_score_codex":0.00077987905,"about_ca_system_score_gemma":0.0007662595,"threshold_uncertainty_score":0.04012674},"labels":[],"label_agreement":null},{"id":"W4406671448","doi":"10.1016/b978-0-08-052042-1.50026-2","title":"10.1016/b978-0-08-052042-1.50026-2","year":2000,"lang":"en","type":"book-chapter","venue":"Time to knit","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":false,"route_ca_aff":false,"route_ca_fund":false,"route_ca_venue":true,"route_about_ca":false,"ca_institutions":"","funders":"","keywords":"Amplifier; Computer science; Geology; Telecommunications; Bandwidth (computing)","score_opus":0.011144243933683962,"score_gpt":0.17517464326943086,"score_spread":0.1640303993357469,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4406671448","genre_codex":"other","genre_gemma":"other","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"other","genre_consensus":"other","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.00020337965,0.0003831687,0.0010747826,0.0002831937,0.00016878043,0.000040088333,0.0005753195,0.000855655,0.9964156],"genre_scores_gemma":[0.0005931844,0.00024514098,0.0004462953,0.00011336831,0.00003455771,0.00003077968,0.00038788695,0.00022491433,0.997924],"study_design_codex":"design_other","study_design_gemma":"not_applicable","domain_scores_codex":[0.9996075,0.00002206434,0.000021331858,0.00013593062,0.0001415469,0.00007158548],"domain_scores_gemma":[0.99875677,0.00037139023,0.00008953829,0.00017932634,0.00026464352,0.00033827542],"candidate_categories":["insufficient_payload"],"consensus_categories":["insufficient_payload"],"category_scores_codex":[0.0007497,0.0016931156,0.0011725717,0.0016284682,0.0012688338,0.00444473,0.0024133069,0.0036606237,0.9740747],"category_scores_gemma":[0.0012576717,0.00071544584,0.0007774671,0.0017837969,0.0010620058,0.0039736927,0.002338074,0.0020260352,0.98741406],"study_design_candidate":"not_applicable","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00014015722,0.000101278456,0.00037149535,0.00038196196,0.000017793654,0.00013056703,0.0000825996,0.00034107774,0.0032732927,0.008066487,0.36306208,0.6240312],"study_design_scores_gemma":[0.00001335145,0.000036072128,0.00037234614,0.00018201272,0.000006001086,0.00017085277,0.000063270476,0.00011810531,0.00032649256,0.0010110826,0.9976901,0.000010253424],"about_ca_topic_score_codex":0.0026713514,"about_ca_topic_score_gemma":0.0027342038,"teacher_disagreement_score":0.025925279,"about_ca_system_score_codex":0.0009029184,"about_ca_system_score_gemma":0.0007434078,"threshold_uncertainty_score":0.0369792},"labels":[],"label_agreement":null},{"id":"W4407475706","doi":"10.1109/apmc60911.2024.10867705","title":"Investigation of a Dielectric Modulated Dual Metal Gate Engineered SOI FinFET with High-K Dielectric for Bio-sensitivity Enhancement","year":2024,"lang":"en","type":"article","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":4,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McMaster University","funders":"","keywords":"Dielectric; Materials science; Silicon on insulator; Sensitivity (control systems); Optoelectronics; Gate dielectric; High-κ dielectric; Dual (grammatical number); Electronic engineering; Electrical engineering; Silicon; Transistor; Voltage; Engineering","score_opus":0.015514185996703563,"score_gpt":0.21561903107171948,"score_spread":0.2001048450750159,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4407475706","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.98831475,0.00078073074,0.009328035,0.00017853924,0.0000650533,0.000029715078,0.00006349085,0.000074457894,0.001165294],"genre_scores_gemma":[0.98159856,0.0005454705,0.016482217,0.000070304166,0.000013563877,0.000016268488,0.00004343579,0.0000068475883,0.001223226],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999231,0.0000066597127,0.0000029208722,0.000022242632,0.00003439455,0.000010542297],"domain_scores_gemma":[0.999923,0.000018721385,0.000020981219,0.000006325778,0.000021165124,0.000009816328],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00011133254,0.00020318621,0.0001808892,0.00007325673,0.00013068703,0.00022767506,0.00043854924,0.00044328967,0.00021023661],"category_scores_gemma":[0.0001842506,0.000114880786,0.00015181818,0.00008085785,0.00019156441,0.00026226733,0.00013067258,0.00016423478,0.00009629891],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000021068061,0.00001018138,0.00012668206,0.00002199268,0.0000027979202,0.00005003752,0.00001276516,0.00010360444,0.99864036,0.000115818984,0.000019771669,0.00087490317],"study_design_scores_gemma":[0.00000756096,0.00024558953,0.0010597783,0.0000039088322,0.000008880944,0.00025312914,0.000028705628,0.0057860794,0.99144673,0.00005512918,0.0010963501,0.0000081332455],"about_ca_topic_score_codex":0.00045174515,"about_ca_topic_score_gemma":0.00090227724,"teacher_disagreement_score":0.00045174515,"about_ca_system_score_codex":0.00027794667,"about_ca_system_score_gemma":0.00018275635,"threshold_uncertainty_score":0.0020166636},"labels":[],"label_agreement":null},{"id":"W4407692393","doi":"10.1109/iedm50854.2024.10873407","title":"Ballistic Transport in State-of-the Art In<sub>0.65</sub>Ga<sub>0.35</sub>As/In<sub>0.52</sub>Al<sub>0.48</sub>As Quantum-Well High-Electron-Mobility Transistors at Room and Cryogenic Temperatures","year":2024,"lang":"en","type":"article","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Kootenay Association for Science & Technology","funders":"Ministry of Science and ICT, South Korea","keywords":"Materials science; State (computer science); Condensed matter physics; Physics; Computer science","score_opus":0.005989557614241805,"score_gpt":0.212998684226379,"score_spread":0.2070091266121372,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4407692393","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9957579,0.0005197758,0.0021412256,0.000060336228,0.0000074870873,0.000011203631,0.0001723351,0.00007464897,0.0012551907],"genre_scores_gemma":[0.9979056,0.00020670003,0.0011760711,0.00000957217,0.0000028372667,0.000011444113,0.000100633944,0.000018450646,0.00056874315],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9997944,0.000027872024,0.000009035761,0.00004833011,0.0000830353,0.00003730475],"domain_scores_gemma":[0.9998171,0.000061693754,0.00003797715,0.000028494316,0.000043913038,0.000010938234],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00029892588,0.000218064,0.0003508996,0.00029293878,0.00039265145,0.0005764532,0.0008617185,0.00043787045,0.0009331097],"category_scores_gemma":[0.0005370329,0.00018604811,0.00021448714,0.0002929262,0.0005064105,0.00084338896,0.00023893436,0.00020185941,0.00024856828],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00050294766,0.000063302585,0.00469091,0.00033742597,0.000081013284,0.00053528365,0.0007265985,0.009625224,0.9687113,0.0066544996,0.0010137804,0.0070576933],"study_design_scores_gemma":[0.000041081523,0.0008964048,0.02061426,0.00006740668,0.00013676014,0.0007386283,0.0005362756,0.10185227,0.86710876,0.0034433715,0.0045005493,0.00006431102],"about_ca_topic_score_codex":0.00220883,"about_ca_topic_score_gemma":0.0030051703,"teacher_disagreement_score":0.00220883,"about_ca_system_score_codex":0.00094005855,"about_ca_system_score_gemma":0.00020557336,"threshold_uncertainty_score":0.006820619},"labels":[],"label_agreement":null},{"id":"W4407737475","doi":"10.1109/ictmod63116.2024.10878208","title":"Predicting CNT TFET Output Characteristics Using Deep Learning Techniques","year":2024,"lang":"en","type":"article","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Deep learning; Computer science; Materials science; Artificial intelligence; Engineering physics; Engineering","score_opus":0.021636422345484393,"score_gpt":0.2553997870193716,"score_spread":0.2337633646738872,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4407737475","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.5254904,0.00082911295,0.45921582,0.00052392477,0.00011019672,0.00006522305,0.0016499184,0.002848022,0.00926748],"genre_scores_gemma":[0.97288203,0.0002402946,0.023345377,0.00004678081,0.000012533666,0.00003270259,0.0005474645,0.000052643645,0.0028402398],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9999448,0.0000053260974,0.0000025854424,0.000015017397,0.000022992912,0.000009225191],"domain_scores_gemma":[0.99978787,0.000097045624,0.000029635543,0.0000130802355,0.000063672305,0.000008706305],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00015289818,0.0004938735,0.00023951118,0.00033870243,0.00014277738,0.000301305,0.00044139806,0.00058109744,0.0011980874],"category_scores_gemma":[0.0007568172,0.00020645613,0.00027915556,0.0003824813,0.00014280093,0.0005561779,0.00015945057,0.00039417014,0.00031063837],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00007721175,0.00003551464,0.0025274446,0.000066838664,0.000018713634,0.00016091819,0.000019501234,0.9454519,0.020611063,0.00096286746,0.0012592481,0.028808855],"study_design_scores_gemma":[9.041345e-7,0.0000048587044,0.00020316232,0.0000015541679,0.0000013996431,0.000006962176,0.0000015634338,0.9974728,0.0020412006,0.00017436442,0.00008976333,0.000001397901],"about_ca_topic_score_codex":0.00747759,"about_ca_topic_score_gemma":0.012189694,"teacher_disagreement_score":0.00747759,"about_ca_system_score_codex":0.00090117106,"about_ca_system_score_gemma":0.0004582655,"threshold_uncertainty_score":0.01486814},"labels":[],"label_agreement":null},{"id":"W4407942808","doi":"10.3390/systems13030154","title":"Optimizing Security of Radio Frequency Identification Systems in Assistive Devices: A Novel Unidirectional Systolic Design for Dickson-Based Field Multiplier","year":2025,"lang":"en","type":"article","venue":"Systems","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":3,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Victoria","funders":"King Salman Center for Disability Research","keywords":"Multiplier (economics); Radio-frequency identification; Computer science; Radio frequency; Electronic engineering; Engineering; Telecommunications; Computer security","score_opus":0.02684137586445133,"score_gpt":0.2657002734178503,"score_spread":0.23885889755339895,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4407942808","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.113198265,0.001294071,0.86472356,0.00041739314,0.00021639444,0.00012715788,0.0000767781,0.00061731465,0.019329028],"genre_scores_gemma":[0.81145,0.00061540486,0.18086359,0.00017663102,0.000063130356,0.00010599542,0.0000777096,0.00003505032,0.006612391],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99987614,0.000027411366,0.00001017141,0.000025520492,0.00004208284,0.000018726902],"domain_scores_gemma":[0.99987185,0.000022796788,0.00003143093,0.000013704938,0.000049510312,0.000010674292],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00018876235,0.0003987565,0.0001875013,0.00034343897,0.00029609908,0.0005662787,0.00064746157,0.0003376205,0.0023684674],"category_scores_gemma":[0.0003229789,0.00013117681,0.00022446322,0.00022093368,0.00021449981,0.00057913235,0.00028831686,0.00026035568,0.00051031215],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0006552364,0.00016589866,0.002638647,0.00053269335,0.00011418305,0.0007274378,0.00038512168,0.098412335,0.45206624,0.11460097,0.0045673265,0.325134],"study_design_scores_gemma":[0.0001360536,0.002342056,0.0011895064,0.00015273025,0.00014833013,0.001409889,0.00017942506,0.71552056,0.19466662,0.01631997,0.067845546,0.00008925412],"about_ca_topic_score_codex":0.0003354705,"about_ca_topic_score_gemma":0.0005599804,"teacher_disagreement_score":0.0023684674,"about_ca_system_score_codex":0.00037920504,"about_ca_system_score_gemma":0.00047271675,"threshold_uncertainty_score":0.007923365},"labels":[],"label_agreement":null},{"id":"W4407969452","doi":"10.1063/5.0250879","title":"Machine learning delta-T noise for temperature bias estimation","year":2025,"lang":"en","type":"article","venue":"The Journal of Chemical Physics","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":2,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Toronto","funders":"Israel Science Foundation; European Research Council; Natural Sciences and Engineering Research Council of Canada; Canada Research Chairs","keywords":"Noise (video); Shot noise; Artificial intelligence; Artificial neural network; Machine learning; Computer science; Work (physics); Conductance; Algorithm; Statistical physics; Physics; Condensed matter physics; Optics","score_opus":0.019108206340611247,"score_gpt":0.2582190011008347,"score_spread":0.23911079476022343,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4407969452","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.06716521,0.00032035683,0.93065906,0.00010968811,0.000039053106,0.000029784933,0.00013039993,0.0007882676,0.0007582242],"genre_scores_gemma":[0.83622384,0.00017580474,0.16218339,0.00008245116,0.000039878192,0.00009550721,0.0003749035,0.00007375532,0.0007503989],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99961203,0.000108517386,0.000026773214,0.000121169396,0.000105960935,0.000025611826],"domain_scores_gemma":[0.9983637,0.000888081,0.000225371,0.00019389215,0.00029531345,0.000033677432],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0011927902,0.0006023171,0.00053997507,0.0005508967,0.0002970698,0.00053836446,0.0007065224,0.0007255995,0.00049909955],"category_scores_gemma":[0.005429904,0.0002055326,0.00037023338,0.000471213,0.0004209376,0.0006640586,0.00041210593,0.0008698749,0.0002465211],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0001286959,0.0000851157,0.0046022795,0.000101971345,0.00008609209,0.00006097849,0.000052624026,0.8808196,0.021079553,0.005654153,0.0006009861,0.086727925],"study_design_scores_gemma":[0.0000014294267,0.000011624366,0.00032409906,0.0000037344682,0.0000028517559,0.0000095568375,0.0000029881273,0.9943177,0.0037140797,0.0014839234,0.00012378024,0.0000041772873],"about_ca_topic_score_codex":0.001497235,"about_ca_topic_score_gemma":0.001440875,"teacher_disagreement_score":0.001497235,"about_ca_system_score_codex":0.0005885956,"about_ca_system_score_gemma":0.00053187174,"threshold_uncertainty_score":0.006308198},"labels":[],"label_agreement":null},{"id":"W4408194171","doi":"10.1063/5.0251851","title":"Impact of quantum well thickness on hole mobility in strained germanium heterostructures","year":2025,"lang":"en","type":"article","venue":"Applied Physics Letters","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":3,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"National Research Council Canada","funders":"Engineering and Physical Sciences Research Council; National Research Council Canada","keywords":"Germanium; Heterojunction; Materials science; Condensed matter physics; Quantum well; Electron mobility; Germanium compounds; Optoelectronics; Physics; Silicon; Optics","score_opus":0.010687683932211624,"score_gpt":0.253923537336057,"score_spread":0.24323585340384538,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4408194171","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99910945,0.00023557087,0.0001952383,0.000025360501,0.000008561982,0.0000019014209,0.000052946987,0.0000142072,0.000356712],"genre_scores_gemma":[0.9996344,0.000111341695,0.00008584198,0.000005088771,0.0000020137988,0.0000015471197,0.000025045229,0.000004834899,0.00012977274],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99990594,0.000013289993,0.0000074015543,0.000024468343,0.00002258853,0.000026269834],"domain_scores_gemma":[0.9995363,0.00024548624,0.00009502785,0.000031436743,0.000050191426,0.000041578027],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00022946799,0.00028820333,0.0001950903,0.00020271752,0.00017012494,0.00045254247,0.0002872846,0.0002730643,0.00076678],"category_scores_gemma":[0.00065114716,0.00023201891,0.00016228657,0.00016240019,0.00034076624,0.0004624669,0.0002152035,0.0001792871,0.00012372826],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0005798081,0.000048271515,0.0033649416,0.000058323763,0.000042879074,0.00029863545,0.00011306885,0.0031100844,0.9899159,0.00034297875,0.00010272891,0.0020225127],"study_design_scores_gemma":[0.000043308683,0.000594307,0.014789219,0.000021860684,0.00008061829,0.0001754109,0.00017422087,0.0175437,0.9659731,0.00018272125,0.00039124922,0.00003022102],"about_ca_topic_score_codex":0.0013084486,"about_ca_topic_score_gemma":0.0015072167,"teacher_disagreement_score":0.0013084486,"about_ca_system_score_codex":0.00034793027,"about_ca_system_score_gemma":0.00017317172,"threshold_uncertainty_score":0.0026016235},"labels":[],"label_agreement":null},{"id":"W4408324946","doi":"10.1109/eptc62800.2024.10909778","title":"New Roadmap for Microelectronics: Charting the Semiconductor Industry's Path Over the Next 5, 10, and 20 Years","year":2024,"lang":"en","type":"article","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":3,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Toronto","funders":"","keywords":"Microelectronics; Semiconductor industry; Path (computing); Technology roadmap; Engineering; Manufacturing engineering; Computer science; Telecommunications; Engineering physics; Electrical engineering; Business; Marketing; Computer network","score_opus":0.02376993351924221,"score_gpt":0.25396044469425183,"score_spread":0.23019051117500963,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4408324946","genre_codex":"other","genre_gemma":"other","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"other","genre_consensus":"other","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.02048653,0.11196019,0.12259409,0.2325146,0.029314503,0.001959886,0.009172806,0.0048453826,0.46715194],"genre_scores_gemma":[0.15861383,0.12577061,0.46394634,0.025900794,0.0016988027,0.0025914838,0.02145764,0.0015100064,0.19851054],"study_design_codex":"not_applicable","study_design_gemma":"not_applicable","domain_scores_codex":[0.9958554,0.00073264784,0.00019401185,0.00021187852,0.0023423496,0.00066373765],"domain_scores_gemma":[0.99505806,0.00045335686,0.00026524605,0.00019249877,0.0029871387,0.0010437334],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0067299954,0.0018357227,0.0006708631,0.0034639207,0.0032950272,0.009887998,0.0019936136,0.004336428,0.019356089],"category_scores_gemma":[0.008635053,0.00058675895,0.00083991,0.0043157144,0.0016017068,0.008311108,0.0056999456,0.0062797233,0.009354914],"study_design_candidate":"not_applicable","study_design_consensus":"not_applicable","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0000910146,0.00018227212,0.0012242057,0.001219354,0.000025276613,0.00029032532,0.0011493535,0.004258907,0.0021692407,0.27429634,0.458024,0.2570697],"study_design_scores_gemma":[0.000011650568,0.00007552416,0.0008666369,0.0005571089,0.000009301115,0.00013318754,0.0010463396,0.0011707366,0.0004141808,0.028962633,0.9667173,0.00003536433],"about_ca_topic_score_codex":0.02927388,"about_ca_topic_score_gemma":0.037754077,"teacher_disagreement_score":0.02927388,"about_ca_system_score_codex":0.007628704,"about_ca_system_score_gemma":0.04700257,"threshold_uncertainty_score":0.06475264},"labels":[],"label_agreement":null},{"id":"W4408436430","doi":"10.1002/9781394248506.ch2","title":"Marvels of Modern Semiconductor Field‐Effect Transistors","year":2025,"lang":"en","type":"other","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Semiconductor; Field-effect transistor; Field (mathematics); Transistor; Optoelectronics; Materials science; Engineering physics; Electrical engineering; Physics; Engineering; Mathematics","score_opus":0.006971706234790772,"score_gpt":0.22405693482065173,"score_spread":0.21708522858586096,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4408436430","genre_codex":"other","genre_gemma":"review","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"review","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.012263721,0.09319943,0.055530142,0.01319845,0.0048790714,0.00007883284,0.00036887318,0.0008675538,0.819614],"genre_scores_gemma":[0.16962026,0.15305829,0.06964659,0.005021671,0.0030739163,0.00021199849,0.0006165725,0.00044709435,0.59830356],"study_design_codex":"theoretical_or_conceptual","study_design_gemma":"not_applicable","domain_scores_codex":[0.9997106,0.00003266869,0.000008945835,0.000040998773,0.00017514353,0.000031608608],"domain_scores_gemma":[0.99988496,0.000036725065,0.0000072162925,0.000020857828,0.000031799536,0.000018343639],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0003376305,0.0006284087,0.00032969352,0.00058780285,0.0009265283,0.0022890696,0.0006489832,0.0009899084,0.025461694],"category_scores_gemma":[0.0005590519,0.0002520151,0.00029867375,0.00049098744,0.0011786603,0.0030542503,0.0009414787,0.0017222795,0.008038441],"study_design_candidate":"not_applicable","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000048589634,0.000053592845,0.00014874329,0.00044928474,0.00000777555,0.00019248665,0.00044952668,0.0011493328,0.010023655,0.74648964,0.051269922,0.18971747],"study_design_scores_gemma":[0.0000040302248,0.000036466987,0.000110093984,0.00020431471,0.0000046860164,0.0002805269,0.00013827434,0.0014536689,0.0036554157,0.12867688,0.86542434,0.000011416689],"about_ca_topic_score_codex":0.0005319311,"about_ca_topic_score_gemma":0.0009396408,"teacher_disagreement_score":0.025461694,"about_ca_system_score_codex":0.0008393895,"about_ca_system_score_gemma":0.0007889133,"threshold_uncertainty_score":0.0851779},"labels":[],"label_agreement":null},{"id":"W4408970698","doi":"10.1109/tim.2025.3555692","title":"Extremely Stable 10 kΩ Metal Foil Resistors in n Ω/Ω Level","year":2025,"lang":"en","type":"article","venue":"IEEE Transactions on Instrumentation and Measurement","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Alpha Technologies (Canada)","funders":"","keywords":"Resistor; FOIL method; Materials science; Electrical engineering; Optoelectronics; Engineering; Voltage; Composite material","score_opus":0.0673823127025006,"score_gpt":0.2577156405870671,"score_spread":0.19033332788456647,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4408970698","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.89793456,0.0018758472,0.053805362,0.0009781794,0.0009807169,0.00017200292,0.0017959186,0.0054401946,0.03701725],"genre_scores_gemma":[0.935585,0.0004831557,0.030039424,0.00016824745,0.00006825597,0.00010785679,0.0006182143,0.00040948208,0.032520335],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9995389,0.000041695315,0.000024214225,0.00015351603,0.00019142275,0.000050198265],"domain_scores_gemma":[0.9993967,0.00008906618,0.00011752253,0.00015102861,0.00019348177,0.000052280277],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00035088923,0.00030698732,0.00034520202,0.0002253392,0.00022674979,0.00058297196,0.0011174041,0.000574716,0.005986186],"category_scores_gemma":[0.0013284252,0.0002697969,0.00019569579,0.00032935326,0.00030787865,0.0008305392,0.0003366951,0.0005458419,0.0035122593],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00025657046,0.00005141294,0.0007469909,0.00027704073,0.000028640836,0.00062053144,0.00043019495,0.0012628827,0.96791714,0.005289647,0.005380594,0.017738275],"study_design_scores_gemma":[0.000050172872,0.0005594811,0.0030519436,0.000035878074,0.00004468668,0.00036602476,0.0001683567,0.008046335,0.93963873,0.0010635972,0.046922512,0.00005231173],"about_ca_topic_score_codex":0.00043387298,"about_ca_topic_score_gemma":0.0011025092,"teacher_disagreement_score":0.005986186,"about_ca_system_score_codex":0.0006228342,"about_ca_system_score_gemma":0.0002086122,"threshold_uncertainty_score":0.02002579},"labels":[],"label_agreement":null},{"id":"W4409014696","doi":"10.1109/ojpel.2025.3556430","title":"Dropout Kolmogorov–Arnold Networks: A Novel Data-Driven Impedance Modeling Approach for Voltage-Source Converters","year":2025,"lang":"en","type":"article","venue":"IEEE Open Journal of Power Electronics","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":3,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Alberta","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Dropout (neural networks); Converters; Electrical impedance; Voltage source; Output impedance; Computer science; Voltage; Electronic engineering; Electrical engineering; Engineering; Machine learning","score_opus":0.034923434734261995,"score_gpt":0.2925585871718765,"score_spread":0.2576351524376145,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4409014696","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.01072707,0.00015886984,0.9868369,0.00011430989,0.000026307576,0.000030722375,0.00006734335,0.00048815447,0.0015503947],"genre_scores_gemma":[0.86235285,0.00041475552,0.12887986,0.00015859761,0.000047152098,0.00020301781,0.00038909298,0.00013319644,0.007421438],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9997832,0.000058649013,0.000017377914,0.000040432886,0.00007797821,0.000022320899],"domain_scores_gemma":[0.99960357,0.00018380366,0.00005820529,0.00003407781,0.00010067614,0.000019714316],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0005774843,0.0006825302,0.00046458293,0.00039082902,0.00031443706,0.00070480927,0.0011725303,0.0006596504,0.0016204163],"category_scores_gemma":[0.0015078009,0.00039265648,0.00059884,0.0003035511,0.000497427,0.0010946504,0.0010469741,0.001240929,0.00047010777],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00005738274,0.00003292166,0.0008732599,0.000057617206,0.000030716696,0.00006831221,0.000053567852,0.9378135,0.0021353988,0.0075156507,0.00080270413,0.050558925],"study_design_scores_gemma":[0.0000011830473,0.000006547176,0.000037838647,0.0000015552345,0.0000015365937,0.0000035660971,0.0000017274278,0.9986677,0.00022851379,0.00087763765,0.0001705259,0.0000016022495],"about_ca_topic_score_codex":0.0058473404,"about_ca_topic_score_gemma":0.0065772412,"teacher_disagreement_score":0.0058473404,"about_ca_system_score_codex":0.0007162276,"about_ca_system_score_gemma":0.00091731735,"threshold_uncertainty_score":0.011626601},"labels":[],"label_agreement":null},{"id":"W4409057856","doi":"10.1109/led.2025.3556348","title":"Nanosheet Transistors Produced in 300 mm Fabrication Platform for Quantum Computing","year":2025,"lang":"en","type":"article","venue":"IEEE Electron Device Letters","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":5,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Université de Sherbrooke","funders":"Fonds de recherche du Québec – Nature et technologies; Natural Sciences and Engineering Research Council of Canada","keywords":"Nanosheet; Fabrication; Transistor; Quantum computer; Optoelectronics; Materials science; Quantum; Nanotechnology; Computer science; Electronic engineering; Electrical engineering; Engineering; Physics; Voltage","score_opus":0.01593592062315892,"score_gpt":0.25822916663885975,"score_spread":0.24229324601570085,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4409057856","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9827696,0.00029221844,0.012407651,0.00014237758,0.000098681725,0.000064228494,0.0008277331,0.00030083815,0.0030966238],"genre_scores_gemma":[0.96930087,0.000219313,0.024798129,0.00004278907,0.00001658599,0.000097583965,0.00081915146,0.00010400407,0.004601551],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998987,0.000005176382,0.000004514955,0.000030602394,0.000043896813,0.00001714304],"domain_scores_gemma":[0.9998179,0.000042332525,0.0000418926,0.00004516983,0.000035825935,0.00001692346],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0001399089,0.0001515038,0.00018235722,0.00012947505,0.0002618336,0.00022430555,0.00043365464,0.00026243416,0.0026350026],"category_scores_gemma":[0.00033829856,0.00012799537,0.00009107608,0.00016066006,0.00023021217,0.00045579294,0.00023400884,0.00029222135,0.00051938335],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000048486778,0.000020157646,0.00039737226,0.00003515053,0.0000056570107,0.00009856687,0.00004305768,0.00065850705,0.99507695,0.0011775363,0.00029230758,0.0021462308],"study_design_scores_gemma":[0.000009388281,0.00014834217,0.0021487828,0.0000045141364,0.000004676404,0.00007890853,0.00002536691,0.003690128,0.9879017,0.00033126818,0.0056500994,0.00000680222],"about_ca_topic_score_codex":0.0004920717,"about_ca_topic_score_gemma":0.0012024054,"teacher_disagreement_score":0.0026350026,"about_ca_system_score_codex":0.00030496606,"about_ca_system_score_gemma":0.00018448861,"threshold_uncertainty_score":0.008814931},"labels":[],"label_agreement":null},{"id":"W4409456782","doi":"10.69709/caic.2025.181989","title":"A Novel Transformer Reinforcement Learning-Based NFV Service Placement in MEC Networks","year":2025,"lang":"en","type":"article","venue":"Computing&AI Connect","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Concordia University; École de Technologie Supérieure","funders":"","keywords":"Transformer; Reinforcement learning; Computer science; Reinforcement; Artificial intelligence; Engineering; Structural engineering; Electrical engineering; Voltage","score_opus":0.012672171415040635,"score_gpt":0.2465596082104549,"score_spread":0.23388743679541427,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4409456782","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.029970909,0.00029932716,0.96504796,0.00024256716,0.00007165193,0.00005358958,0.000049836883,0.00042481767,0.003839299],"genre_scores_gemma":[0.8954156,0.00015464163,0.09962567,0.00024518324,0.00003282321,0.00007334281,0.00010172429,0.000067088404,0.004283829],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9996569,0.00007906216,0.000013315403,0.00007726973,0.00007272928,0.000100757396],"domain_scores_gemma":[0.9994462,0.0002710963,0.000055309363,0.000030313997,0.00012827244,0.000068779605],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0005980614,0.00066860806,0.0008298801,0.00035360965,0.00040997393,0.00056665635,0.0013752937,0.00096402806,0.002965515],"category_scores_gemma":[0.001729537,0.00028151128,0.00038765438,0.00033362783,0.00051969086,0.00077557424,0.00094313524,0.00082403485,0.00030755447],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00010865924,0.000052961732,0.00063965283,0.000037049136,0.000018763381,0.00008831305,0.000033886783,0.9394227,0.0022358752,0.0037802972,0.0014865865,0.052095227],"study_design_scores_gemma":[0.00000745267,0.000019654279,0.000036454305,0.000002301881,0.0000023514087,0.0000133969725,0.0000044245776,0.99865156,0.00018636812,0.00087946845,0.00019463901,0.0000019576096],"about_ca_topic_score_codex":0.009647447,"about_ca_topic_score_gemma":0.007997087,"teacher_disagreement_score":0.009647447,"about_ca_system_score_codex":0.001036884,"about_ca_system_score_gemma":0.0013020248,"threshold_uncertainty_score":0.019182622},"labels":[],"label_agreement":null},{"id":"W4409473913","doi":"10.1109/access.2025.3560850","title":"Low-Power, Low-Energy, Static, Contention-Free, TSPC Dual-Edge Triggered Flip-Flops","year":2025,"lang":"en","type":"article","venue":"IEEE Access","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":6,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Flip; Dual (grammatical number); FLOPS; Power (physics); Computer science; Enhanced Data Rates for GSM Evolution; Energy (signal processing); Parallel computing; Telecommunications; Physics","score_opus":0.01808779931725221,"score_gpt":0.2764645908465831,"score_spread":0.2583767915293309,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4409473913","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.68901545,0.0013812936,0.2928925,0.000427286,0.00017413835,0.00016493424,0.0003946526,0.0014167931,0.014132978],"genre_scores_gemma":[0.96525353,0.00016558442,0.030579375,0.00009731431,0.000024548472,0.000031191,0.00011593671,0.000022071776,0.003710424],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.999884,0.0000070496453,0.000006336218,0.000026944945,0.000053581716,0.000022034985],"domain_scores_gemma":[0.99977845,0.000040351184,0.000046592857,0.00003410715,0.00008172802,0.000018701978],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0000954982,0.00020785494,0.0001863979,0.0003929085,0.00028242773,0.00033381206,0.0006688757,0.00025018794,0.0017374486],"category_scores_gemma":[0.00032545478,0.00012059535,0.00010962685,0.00031273626,0.0002339709,0.00045019994,0.00026104218,0.00025188923,0.0002962942],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000506163,0.0001501731,0.0024391941,0.0002800098,0.00003516627,0.00071280706,0.000086730535,0.015742438,0.8315174,0.0067873974,0.0021358102,0.13960667],"study_design_scores_gemma":[0.00012118891,0.0012108597,0.0052667395,0.000032004365,0.00006684503,0.002181053,0.00008063042,0.16227315,0.81274456,0.0023105133,0.013659437,0.00005291403],"about_ca_topic_score_codex":0.0005298341,"about_ca_topic_score_gemma":0.0018268288,"teacher_disagreement_score":0.0017374486,"about_ca_system_score_codex":0.0003263642,"about_ca_system_score_gemma":0.00039293992,"threshold_uncertainty_score":0.005812347},"labels":[],"label_agreement":null},{"id":"W4409641226","doi":"10.1109/jeds.2025.3562575","title":"A Low Static-Power D Flip-Flop With Unipolar Thin Film Transistors on a Flexible Substrate","year":2025,"lang":"en","type":"article","venue":"IEEE Journal of the Electron Devices Society","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":5,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Flip-flop; Materials science; Substrate (aquarium); Transistor; Optoelectronics; Thin-film transistor; Electrical engineering; Power (physics); Physics; CMOS; Voltage; Engineering; Nanotechnology","score_opus":0.0076378069235077005,"score_gpt":0.22726789389520274,"score_spread":0.21963008697169503,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4409641226","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9377541,0.0024882297,0.052482154,0.00042889387,0.0002647695,0.00008979004,0.00039515324,0.0006106479,0.005486277],"genre_scores_gemma":[0.9615266,0.0004957353,0.03555474,0.00009326101,0.000036122357,0.000026349868,0.000079471196,0.000013298041,0.0021745672],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998919,0.0000069961466,0.0000073770116,0.00003214755,0.000045615518,0.000015897764],"domain_scores_gemma":[0.99987686,0.000019177887,0.000033973374,0.000019091989,0.00003600809,0.000014923707],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00007317741,0.00022199367,0.00018629947,0.0002394105,0.00022838535,0.00023033842,0.0006472619,0.00046248297,0.00082086865],"category_scores_gemma":[0.00020234851,0.00015027968,0.00018296123,0.00027503853,0.00013049289,0.00043675327,0.00013539176,0.00021289587,0.0002492216],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00012255194,0.000049285365,0.0009412468,0.0001417305,0.000025839756,0.0005576206,0.00004665421,0.0012035138,0.96064615,0.0005693194,0.0010622289,0.034633864],"study_design_scores_gemma":[0.000061685954,0.0011530275,0.0042695217,0.00002688245,0.00005178912,0.0015999562,0.000056792658,0.02568938,0.95796746,0.00022930001,0.008846671,0.000047422007],"about_ca_topic_score_codex":0.0011912335,"about_ca_topic_score_gemma":0.0019645763,"teacher_disagreement_score":0.0011912335,"about_ca_system_score_codex":0.00029649795,"about_ca_system_score_gemma":0.00020378573,"threshold_uncertainty_score":0.0027461052},"labels":[],"label_agreement":null},{"id":"W4409985421","doi":"10.1109/lmwt.2025.3562538","title":"Knowledge-Based Extrapolation of Neural Network Model for Transistor Modeling","year":2025,"lang":"en","type":"article","venue":"IEEE Microwave and Wireless Technology Letters","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":4,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Carleton University","funders":"","keywords":"Extrapolation; Artificial neural network; Computer science; Transistor model; Transistor; Artificial intelligence; Electrical engineering; Engineering; Mathematics; Statistics","score_opus":0.01869758151247381,"score_gpt":0.24366962790306146,"score_spread":0.22497204639058765,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4409985421","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.021639789,0.00043133585,0.97169363,0.00010293161,0.00003183574,0.000023384404,0.00011526221,0.00038700295,0.005574825],"genre_scores_gemma":[0.8908064,0.0007850777,0.10002599,0.00009714948,0.00004106152,0.00020116099,0.00035397836,0.000070989976,0.0076181763],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.999853,0.000030068963,0.000008147476,0.0000376202,0.00005707006,0.00001405724],"domain_scores_gemma":[0.9997863,0.000103715414,0.000021607502,0.000022200344,0.000060438135,0.0000057625366],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00027037758,0.00044555275,0.00045832252,0.0003224396,0.00021864966,0.0004212011,0.0009692642,0.0007158008,0.0017478806],"category_scores_gemma":[0.00085357454,0.00024453082,0.0005909878,0.0003697905,0.00025884193,0.0008218231,0.0003514371,0.00090220245,0.00038647174],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000017147198,0.000009612351,0.00019990357,0.00002980798,0.000011336124,0.000044049724,0.000019863952,0.9825774,0.0019317882,0.0026873108,0.000226458,0.012245316],"study_design_scores_gemma":[5.3898924e-7,0.000002548581,0.000036614743,0.0000017694092,0.0000014713498,0.000005207347,9.0770425e-7,0.998855,0.00027236543,0.0006909281,0.00013113643,0.0000013892411],"about_ca_topic_score_codex":0.0072265766,"about_ca_topic_score_gemma":0.0055462285,"teacher_disagreement_score":0.0072265766,"about_ca_system_score_codex":0.0005858386,"about_ca_system_score_gemma":0.00045860655,"threshold_uncertainty_score":0.0143690705},"labels":[],"label_agreement":null},{"id":"W4410717411","doi":"10.1016/j.seppur.2025.133459","title":"Image-based CNN-DPD model for critical diameter prediction in DLD devices","year":2025,"lang":"en","type":"article","venue":"Separation and Purification Technology","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":2,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Artificial Intelligence in Medicine (Canada)","funders":"Fudan University; National Natural Science Foundation of China; Innovative Research Group Project of the National Natural Science Foundation of China; Natural Science Foundation of Shanghai","keywords":"Computer science; Artificial intelligence","score_opus":0.01909245805929183,"score_gpt":0.30932603762069755,"score_spread":0.2902335795614057,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4410717411","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.19613831,0.005861977,0.76822495,0.001298039,0.0006452795,0.00014313262,0.0040017893,0.0076140515,0.016072517],"genre_scores_gemma":[0.9165755,0.0013850034,0.06734864,0.00041586376,0.00012411816,0.00012929321,0.0021349005,0.00018104457,0.011705621],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99993527,0.0000034647958,0.0000026838852,0.000025210617,0.000017496573,0.00001579034],"domain_scores_gemma":[0.9998776,0.000036828784,0.000015436852,0.000012798038,0.000048909613,0.000008443625],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00013525909,0.0006312257,0.0004971059,0.0005069108,0.00014647108,0.0004364303,0.0011264709,0.00073942286,0.0026194793],"category_scores_gemma":[0.00050983764,0.0002826058,0.0004850118,0.00040444854,0.00017072474,0.0005790493,0.0002712283,0.0005412594,0.00084209174],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0003268279,0.000163495,0.0043443465,0.0002985576,0.00009769243,0.00026664883,0.000031711308,0.69473064,0.028646419,0.0037431628,0.012097658,0.2552529],"study_design_scores_gemma":[0.0000020556108,0.000007619871,0.00019026276,0.0000032202347,0.000005561425,0.000013386421,0.0000014752198,0.997338,0.0017257014,0.0003412904,0.00036894376,0.0000025097588],"about_ca_topic_score_codex":0.011765195,"about_ca_topic_score_gemma":0.013493128,"teacher_disagreement_score":0.011765195,"about_ca_system_score_codex":0.0008943715,"about_ca_system_score_gemma":0.0006360654,"threshold_uncertainty_score":0.023393393},"labels":[],"label_agreement":null},{"id":"W4410738006","doi":"10.1109/tnano.2025.3571388","title":"QSBMs: Lightweight Quantized Simulated Bifurcation Ising Machines","year":2025,"lang":"en","type":"article","venue":"IEEE Transactions on Nanotechnology","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":2,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Alberta","funders":"Natural Sciences and Engineering Research Council of Canada; Alberta Innovates; University of Alberta","keywords":"Bifurcation; Ising model; Computer science; Physics; Statistical physics; Control theory (sociology); Mathematics; Artificial intelligence; Nonlinear system; Quantum mechanics","score_opus":0.010491935181178897,"score_gpt":0.2483942869996335,"score_spread":0.23790235181845462,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4410738006","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.23790905,0.00095174694,0.7107712,0.0005736537,0.00027344935,0.00018534827,0.00073308765,0.013552563,0.03504989],"genre_scores_gemma":[0.8342144,0.00018029392,0.15948385,0.000094562485,0.000022348,0.00011996291,0.00037738716,0.0001840225,0.005323152],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99993396,0.000015054401,0.000004008204,0.000009213152,0.000027609252,0.000010103867],"domain_scores_gemma":[0.99991214,0.00002554374,0.000017769644,0.00001633484,0.000018482297,0.000009779453],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00011018724,0.00022770847,0.00021141012,0.00021159464,0.00018401515,0.00038552095,0.00060544035,0.00025366302,0.006473237],"category_scores_gemma":[0.0003147916,0.000121207515,0.00013484187,0.00023102047,0.00024156352,0.00045096962,0.00026987228,0.00029660933,0.0006823813],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0005373914,0.00013627806,0.0017852641,0.00046351136,0.000063774736,0.00025147738,0.00015612546,0.45230746,0.14360149,0.13157685,0.022997381,0.24612305],"study_design_scores_gemma":[0.00004416989,0.00011826102,0.00034973782,0.000017939057,0.000008209763,0.00003402207,0.000012117241,0.95219195,0.024260521,0.009851825,0.013098646,0.000012637049],"about_ca_topic_score_codex":0.0010669576,"about_ca_topic_score_gemma":0.0016799282,"teacher_disagreement_score":0.006473237,"about_ca_system_score_codex":0.00046116492,"about_ca_system_score_gemma":0.00032776204,"threshold_uncertainty_score":0.021655142},"labels":[],"label_agreement":null},{"id":"W4410816239","doi":"10.1016/j.sse.2025.109156","title":"Preliminary numerical study on magnet gate in MOS FD-SOI technology for quantum and sensor applications","year":2025,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Institut interdisciplinaire d'innovation technologique; Université de Sherbrooke","funders":"","keywords":"Silicon on insulator; Optoelectronics; Magnet; Physics; Quantum; Materials science; Electrical engineering; Engineering physics; Engineering; Silicon; Quantum mechanics","score_opus":0.009627530095720543,"score_gpt":0.28322691410380363,"score_spread":0.2735993840080831,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4410816239","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.87603766,0.0016236096,0.039083086,0.0012899096,0.00024559145,0.00008240048,0.0005745044,0.00025649846,0.08080671],"genre_scores_gemma":[0.9899311,0.0002385664,0.00640368,0.00006806577,0.00002403789,0.00001812649,0.000082594444,0.000028505006,0.0032052603],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9999566,0.000009265595,0.0000014773634,0.000005137445,0.000016787011,0.000010689805],"domain_scores_gemma":[0.99973005,0.00015632075,0.000028898568,0.000016179012,0.00005379618,0.000014860225],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00014973515,0.0001880282,0.0002690258,0.00022266993,0.00040975882,0.00034183543,0.00039719415,0.00048818768,0.0030164733],"category_scores_gemma":[0.0006872202,0.00010474855,0.00023602057,0.00029694661,0.00025076518,0.00040214194,0.00013095235,0.00021804594,0.00014745469],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0002479061,0.00015784717,0.003907445,0.0005016698,0.000046951154,0.0004915263,0.00015416977,0.89127904,0.044352874,0.043322496,0.0033820663,0.012155947],"study_design_scores_gemma":[0.000010485838,0.000038115413,0.0007024462,0.000009557659,0.000008058156,0.000025418274,0.000031162937,0.9947731,0.00257983,0.0011177862,0.0006982078,0.0000059103572],"about_ca_topic_score_codex":0.0037598584,"about_ca_topic_score_gemma":0.0047744135,"teacher_disagreement_score":0.0037598584,"about_ca_system_score_codex":0.0004607824,"about_ca_system_score_gemma":0.00033509798,"threshold_uncertainty_score":0.010091126},"labels":[],"label_agreement":null},{"id":"W4410992148","doi":"10.1364/ofc.2025.tu2e.3","title":"EDFA gain profile prediction under off-target channel add/drop","year":2025,"lang":"en","type":"article","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Huawei Technologies (Canada)","funders":"","keywords":"Drop (telecommunication); Channel (broadcasting); Erbium doped fiber amplifier; Optical amplifier; Computer science; Materials science; Optics; Telecommunications; Physics","score_opus":0.012486434097596946,"score_gpt":0.23166005585078436,"score_spread":0.21917362175318741,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4410992148","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.2678236,0.00032145492,0.7226735,0.00032926098,0.000113640766,0.000048703798,0.00039991518,0.0030093922,0.005280585],"genre_scores_gemma":[0.95753074,0.00021663771,0.03829217,0.00013684007,0.000017779892,0.000028224922,0.00038145494,0.00011501681,0.0032809752],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9997224,0.00003199683,0.0000086176715,0.000067314075,0.00012781715,0.000041794505],"domain_scores_gemma":[0.99970406,0.00009473675,0.000035759906,0.000044070715,0.000109317145,0.000012112952],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0003024989,0.0011581122,0.00034954573,0.00042526083,0.000301079,0.00067147426,0.00068088196,0.0005592595,0.0010424302],"category_scores_gemma":[0.0009895227,0.00025050255,0.00035366762,0.00026170432,0.00027793448,0.0009987797,0.00046699788,0.0008029427,0.00067064894],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0009979063,0.00023891978,0.01845695,0.00015591193,0.00016626745,0.00038878396,0.00019506898,0.54408944,0.21076149,0.0025868728,0.0030256144,0.21893673],"study_design_scores_gemma":[0.000008060738,0.00004725759,0.0015939629,0.000007773346,0.000013868037,0.00007837283,0.000016503416,0.9530833,0.044093493,0.0004718436,0.00056852144,0.000017071468],"about_ca_topic_score_codex":0.006349674,"about_ca_topic_score_gemma":0.008840116,"teacher_disagreement_score":0.006349674,"about_ca_system_score_codex":0.00055213465,"about_ca_system_score_gemma":0.0005667409,"threshold_uncertainty_score":0.012625456},"labels":[],"label_agreement":null},{"id":"W4411617967","doi":"10.51847/wv7pzkr9ft","title":"10.51847/wV7Pzkr9ft","year":2000,"lang":"en","type":"article","venue":"Time to knit","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":false,"route_ca_venue":true,"route_about_ca":false,"ca_institutions":"","funders":"","keywords":"Dropout (neural networks); Power consumption; Low-dropout regulator; Power (physics); Consumption (sociology); Voltage; Dropout voltage; Electrical engineering; Computer science; Materials science; Voltage regulator; Engineering; Physics; Sociology","score_opus":0.0073948189236014384,"score_gpt":0.17794854761020645,"score_spread":0.170553728686605,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4411617967","genre_codex":"other","genre_gemma":"other","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"other","genre_consensus":"other","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.02544496,0.001065633,0.29558912,0.000965799,0.0010406573,0.00024275332,0.0010802457,0.009973765,0.66459703],"genre_scores_gemma":[0.15108931,0.0008239565,0.03850396,0.00020736015,0.00013284205,0.00018017273,0.0015530506,0.0012918042,0.80621755],"study_design_codex":"design_other","study_design_gemma":"not_applicable","domain_scores_codex":[0.99988127,0.0000139208105,0.0000054860716,0.000023533043,0.00005545891,0.000020331414],"domain_scores_gemma":[0.9998925,0.00001968544,0.000014091512,0.00002466594,0.000038748723,0.000010358709],"candidate_categories":["insufficient_payload"],"consensus_categories":["insufficient_payload"],"category_scores_codex":[0.00017549656,0.00047027404,0.00030101987,0.0005967905,0.0002973061,0.0011545962,0.0006451295,0.0013397263,0.35372332],"category_scores_gemma":[0.00027804024,0.0002272008,0.00027819377,0.0005471209,0.00030973964,0.0006359196,0.00044258157,0.00048970024,0.25249377],"study_design_candidate":"not_applicable","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00032529337,0.00027056772,0.0016665752,0.0006403821,0.000065898355,0.0008131252,0.00017257493,0.044160977,0.0891949,0.046419557,0.11522156,0.7010485],"study_design_scores_gemma":[0.000081101236,0.00026349575,0.001609987,0.00019896343,0.000039585375,0.0008483307,0.000103293736,0.27139214,0.023416629,0.008374264,0.6936217,0.000050582737],"about_ca_topic_score_codex":0.0028887296,"about_ca_topic_score_gemma":0.0020407564,"teacher_disagreement_score":0.6462767,"about_ca_system_score_codex":0.00046721383,"about_ca_system_score_gemma":0.00026847926,"threshold_uncertainty_score":0.92183524},"labels":[],"label_agreement":null},{"id":"W4411728133","doi":"10.3390/mi16070748","title":"Theoretical Prediction of the Impact of Phosphorus Doping on the Elastic Constants of Silicon","year":2025,"lang":"en","type":"article","venue":"Micromachines","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":2,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Simon Fraser University","funders":"Natural Sciences and Engineering Research Council of Canada; Simon Fraser University","keywords":"Materials science; Dopant; Doping; Silicon; Anisotropy; Condensed matter physics; Lattice constant; Work (physics); Thermodynamics; Optoelectronics; Physics; Optics","score_opus":0.008834278594415218,"score_gpt":0.24549416590640835,"score_spread":0.23665988731199314,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4411728133","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.82264674,0.0016097195,0.15474056,0.0006313929,0.00008992994,0.00007232437,0.0003245186,0.00021455689,0.01967026],"genre_scores_gemma":[0.9870402,0.00080074504,0.0109238345,0.000069118025,0.000014646883,0.000079940866,0.00009830166,0.000051143124,0.0009221671],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99978703,0.00005191096,0.000009075714,0.00002808841,0.00007672375,0.000047225323],"domain_scores_gemma":[0.9994247,0.00036438165,0.000047122656,0.00007609894,0.00006478501,0.000022906865],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0006178142,0.0005783458,0.00051034545,0.000541092,0.0005058424,0.00048931787,0.0009923895,0.00097461295,0.0010621379],"category_scores_gemma":[0.0018558219,0.000371869,0.00044513054,0.0003821243,0.00092470756,0.001023004,0.0005896262,0.0008144524,0.00021841569],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000030827712,0.000031612537,0.0006239589,0.00012463193,0.000021021873,0.000101395504,0.00004161664,0.959159,0.009771927,0.02666473,0.00013610312,0.0032931082],"study_design_scores_gemma":[0.0000060992124,0.000015489459,0.00034202376,0.0000091753645,0.0000052338514,0.0000073426645,0.00000969928,0.991956,0.0016705024,0.0058220276,0.00014914128,0.0000073007836],"about_ca_topic_score_codex":0.0044496893,"about_ca_topic_score_gemma":0.0040483274,"teacher_disagreement_score":0.0044496893,"about_ca_system_score_codex":0.00052698795,"about_ca_system_score_gemma":0.0009403922,"threshold_uncertainty_score":0.008847594},"labels":[],"label_agreement":null},{"id":"W4412078816","doi":"10.1080/02564602.2025.2522079","title":"0.35 µm CNTFET for Multi-band Low Noise Amplifier","year":2025,"lang":"en","type":"article","venue":"IETE Technical Review","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Infineon Technologies (Canada)","funders":"","keywords":"Computer science; Low-noise amplifier; Noise (video); Amplifier; Telecommunications; Electrical engineering; Carbon nanotube field-effect transistor; Optoelectronics; Materials science; Bandwidth (computing); Transistor; Engineering; Artificial intelligence","score_opus":0.040799807505824744,"score_gpt":0.3388314504497113,"score_spread":0.29803164294388657,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4412078816","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.49148178,0.085349195,0.35402304,0.0025073467,0.0032407197,0.00036940505,0.0009015045,0.0011862711,0.060940735],"genre_scores_gemma":[0.8249702,0.01583279,0.12793544,0.00043795715,0.00024746257,0.000117248295,0.00018762189,0.0000495096,0.03022172],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998981,0.000006489328,0.0000041880394,0.00003191151,0.000048742797,0.000010627562],"domain_scores_gemma":[0.99993205,0.000014327427,0.000012629447,0.000004106521,0.000030203348,0.000006703011],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00011592895,0.00024698384,0.00016002984,0.00021064491,0.00015955277,0.00033451355,0.0004779707,0.0006939449,0.0008717115],"category_scores_gemma":[0.00017134691,0.000110477624,0.00016668519,0.00019231715,0.0001259967,0.00037141197,0.00011717572,0.00022309026,0.00071848155],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00003171235,0.000019530386,0.00029380733,0.00021829369,0.000009691135,0.00024133084,0.000028693987,0.00074754114,0.96580017,0.00442337,0.0008489024,0.027337113],"study_design_scores_gemma":[0.000018096023,0.0006451444,0.0022321295,0.000109943205,0.00007396782,0.0016758327,0.000050055816,0.035265014,0.86738664,0.0017417703,0.090761624,0.000039757015],"about_ca_topic_score_codex":0.00056945346,"about_ca_topic_score_gemma":0.0019863974,"teacher_disagreement_score":0.0008717115,"about_ca_system_score_codex":0.00037928275,"about_ca_system_score_gemma":0.00021572142,"threshold_uncertainty_score":0.0029161572},"labels":[],"label_agreement":null},{"id":"W4412129221","doi":"10.1109/ias62731.2025.11061524","title":"Quantum Variational Circuits for Detection of False Data Injection Against Power Transformers","year":2025,"lang":"en","type":"article","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Toronto","funders":"","keywords":"Electronic circuit; Transformer; Computer science; Electronic engineering; Electrical engineering; Engineering; Voltage","score_opus":0.027755038490437606,"score_gpt":0.26930007837044695,"score_spread":0.24154503988000933,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4412129221","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.09951627,0.00024331448,0.8957685,0.00027975987,0.000055579014,0.00008866842,0.00006585408,0.0010870657,0.0028949599],"genre_scores_gemma":[0.961091,0.000047716036,0.038146954,0.00007747603,0.000009034198,0.00001831851,0.000020851277,0.000022446875,0.00056613015],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9993414,0.00021651476,0.000026622514,0.00011760618,0.0002281889,0.00006973267],"domain_scores_gemma":[0.99905485,0.0004939158,0.00013031931,0.00014440971,0.00014440477,0.000032046162],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00081663183,0.00038895293,0.00031842152,0.00037087666,0.00031236408,0.0005630514,0.0010085717,0.0006131384,0.0015607212],"category_scores_gemma":[0.002967591,0.00015507727,0.00019557342,0.0002280931,0.00093373004,0.0010906823,0.00060223124,0.00065498904,0.00014016354],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0008863541,0.00021922008,0.0050878674,0.0002822037,0.00012881581,0.00043756564,0.00038867487,0.38771778,0.23565166,0.13744333,0.002916405,0.22884005],"study_design_scores_gemma":[0.000010502516,0.000068983114,0.0002639868,0.000004785195,0.000006706044,0.000047394493,0.000009225702,0.9762205,0.017744137,0.0051846253,0.0004289716,0.000010261788],"about_ca_topic_score_codex":0.0014262742,"about_ca_topic_score_gemma":0.0018430268,"teacher_disagreement_score":0.0015607212,"about_ca_system_score_codex":0.00087673566,"about_ca_system_score_gemma":0.00056233373,"threshold_uncertainty_score":0.006361246},"labels":[],"label_agreement":null},{"id":"W4412452463","doi":"10.1016/j.pnucene.2025.105890","title":"Detailed transient modeling and FPGA-based real-time digital-twin development for sodium-cooled fast reactor","year":2025,"lang":"en","type":"article","venue":"Progress in Nuclear Energy","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":4,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Alberta","funders":"Natural Sciences and Engineering Research Council of Canada; Alberta Innovates","keywords":"Sodium-cooled fast reactor; Transient (computer programming); Computer science; Nuclear engineering; Field-programmable gate array; Transient analysis; Sodium; Materials science; Transient response; Embedded system; Operating system; Electrical engineering","score_opus":0.011275311329845076,"score_gpt":0.22614910486229053,"score_spread":0.21487379353244546,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4412452463","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.2641027,0.00040391012,0.70891494,0.00021090805,0.0001098548,0.00012323305,0.00045495442,0.0043438827,0.021335712],"genre_scores_gemma":[0.9480428,0.00013862461,0.047741212,0.000022371236,0.000007851184,0.000099039746,0.00020239438,0.00012768396,0.0036180916],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99990284,0.000024375848,0.000006216597,0.000016665712,0.000034931913,0.000014939987],"domain_scores_gemma":[0.9998343,0.00007466512,0.000021853664,0.000021240912,0.000037034388,0.000010902033],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00024042178,0.00052574393,0.0003941698,0.0002628411,0.00023386498,0.0004692788,0.0006740816,0.00046752297,0.0037492157],"category_scores_gemma":[0.00046447155,0.0002612202,0.0004930656,0.00019297897,0.00022549868,0.00040875637,0.000309908,0.00041842676,0.0004067272],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00009060181,0.000018725916,0.00063456374,0.00006622794,0.000012138699,0.000078833036,0.00004621873,0.9833807,0.0054007997,0.001387081,0.00034983834,0.008534198],"study_design_scores_gemma":[0.0000058683195,0.000017435095,0.000080267244,0.0000027159288,0.0000031774023,0.000008249197,0.0000051773227,0.997537,0.0017795571,0.00010668543,0.0004512284,0.0000026240343],"about_ca_topic_score_codex":0.006502119,"about_ca_topic_score_gemma":0.0040860707,"teacher_disagreement_score":0.006502119,"about_ca_system_score_codex":0.0004854843,"about_ca_system_score_gemma":0.00058313087,"threshold_uncertainty_score":0.0129285455},"labels":[],"label_agreement":null},{"id":"W4412586768","doi":"10.1007/978-3-031-85114-8_5","title":"Maximizing the Figures of Merit, Temperature Range, and Optimizing the Algorithmic Design Methodologies Based on Constant Current Density Bias for FDSOI Analog-Mixed-Signal, Digital, mm-Wave, and Fiberoptic Circuits from the Back-Gate Voltage","year":2025,"lang":"en","type":"book-chapter","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Toronto","funders":"","keywords":"Figure of merit; Electronic circuit; Constant (computer programming); Electronic engineering; Atmospheric temperature range; Mixed-signal integrated circuit; Materials science; Range (aeronautics); SIGNAL (programming language); Electrical engineering; Optoelectronics; Computer science; Engineering; Physics","score_opus":0.10228331551904503,"score_gpt":0.268756542850352,"score_spread":0.16647322733130698,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4412586768","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.027668886,0.009113843,0.86335266,0.0006700285,0.0002754123,0.000067433946,0.00016475996,0.0010924571,0.09759455],"genre_scores_gemma":[0.30737653,0.005935163,0.6482496,0.00025458427,0.00018931506,0.00011826623,0.00018536746,0.0006931629,0.03699792],"study_design_codex":"design_other","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99988186,0.000015253565,0.0000042560364,0.000022479267,0.000064047366,0.00001213914],"domain_scores_gemma":[0.99987507,0.000057015342,0.000017547538,0.000014979547,0.000031965723,0.0000034447764],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00021126866,0.00063430826,0.00031763565,0.00042703832,0.00022617393,0.00096879294,0.0007052476,0.00036649816,0.004315032],"category_scores_gemma":[0.0005881963,0.0002674234,0.00023628243,0.00048215594,0.00028848267,0.0009394295,0.00026962667,0.0006974223,0.0013150739],"study_design_candidate":"simulation_or_modeling","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0000834096,0.000075885575,0.00040944555,0.00049206946,0.00004559659,0.000067363035,0.00011244365,0.15460397,0.21958253,0.21949957,0.012664189,0.39236352],"study_design_scores_gemma":[0.000022426331,0.00020453405,0.00063313346,0.00014191243,0.000057380257,0.00041607366,0.000060678845,0.7114647,0.11633122,0.08930216,0.08132466,0.000041108335],"about_ca_topic_score_codex":0.0003965686,"about_ca_topic_score_gemma":0.0017226876,"teacher_disagreement_score":0.004315032,"about_ca_system_score_codex":0.00067349535,"about_ca_system_score_gemma":0.00032507398,"threshold_uncertainty_score":0.014435172},"labels":[],"label_agreement":null},{"id":"W4412624386","doi":"10.1109/rfic61188.2025.11082822","title":"A 204GS/s 1-to-2 Analog Demultiplexer in 22nm FDSOI CMOS","year":2025,"lang":"en","type":"article","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Toronto","funders":"","keywords":"Demultiplexer; CMOS; Computer science; Silicon on insulator; Electronic engineering; Electrical engineering; Optoelectronics; Materials science; Engineering; Multiplexing; Silicon; Multiplexer","score_opus":0.004802665696913439,"score_gpt":0.2388835685349481,"score_spread":0.23408090283803468,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4412624386","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.8016216,0.0027002362,0.14633487,0.0019600603,0.000554611,0.000767876,0.0020051433,0.00949731,0.034558307],"genre_scores_gemma":[0.83068305,0.0005045191,0.14533009,0.00037735436,0.0000832076,0.00012941303,0.00039229944,0.00011349207,0.022386475],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99970156,0.000031366948,0.00001430092,0.000081778344,0.000105948,0.00006501794],"domain_scores_gemma":[0.99985754,0.000038974664,0.000023203535,0.000017666953,0.00004123051,0.000021298507],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0003566079,0.00041943332,0.00033299133,0.0005091829,0.00049917615,0.0005033615,0.0006248677,0.00049107475,0.0041461573],"category_scores_gemma":[0.00032720383,0.00022656459,0.00012357638,0.000352443,0.00023752928,0.00060623366,0.00023485912,0.000504037,0.0010170891],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0003387106,0.0000873278,0.0009190919,0.00019793799,0.000022524584,0.0002281592,0.00021835061,0.0009392967,0.93639225,0.0027062076,0.0035041494,0.05444601],"study_design_scores_gemma":[0.0001274052,0.0014656901,0.004420743,0.00003945895,0.00004959936,0.0009907893,0.000118455864,0.019723788,0.9127184,0.00081688643,0.05945796,0.000070722366],"about_ca_topic_score_codex":0.001405112,"about_ca_topic_score_gemma":0.0026528374,"teacher_disagreement_score":0.0041461573,"about_ca_system_score_codex":0.0009775762,"about_ca_system_score_gemma":0.00050805794,"threshold_uncertainty_score":0.013870299},"labels":[],"label_agreement":null},{"id":"W4413017260","doi":"10.22215/etd/2025-16505","title":"Delay Optimization in Digital FinFET Circuits Using a Modified Method of Logical Effort","year":2025,"lang":"en","type":"dissertation","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Carleton University","funders":"","keywords":"Digital electronics; Electronic engineering; Electronic circuit; Computer science; Electrical engineering; Engineering","score_opus":0.03562072667956326,"score_gpt":0.3017691076349264,"score_spread":0.2661483809553632,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4413017260","genre_codex":"methods","genre_gemma":"methods","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"methods","genre_consensus":"methods","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.020792723,0.000152412,0.9750835,0.000058156733,0.00003865556,0.000029814975,0.00002671797,0.00013767793,0.0036804208],"genre_scores_gemma":[0.41602945,0.00038013805,0.57514733,0.00011714554,0.000042578904,0.00013478432,0.0000800738,0.000268938,0.0077995285],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9998443,0.000036151294,0.000007010975,0.000027223627,0.00006953852,0.00001576913],"domain_scores_gemma":[0.9997986,0.00011372066,0.000023725517,0.000021857051,0.00003646577,0.000005704037],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00035543335,0.00042708227,0.00019143186,0.0002935466,0.0001531414,0.00044861698,0.0005442413,0.00032245464,0.0014872808],"category_scores_gemma":[0.00092990836,0.00016124417,0.00034965453,0.00024240519,0.00025523923,0.0004662019,0.0002787614,0.00037136703,0.00019754992],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00008498088,0.0000582172,0.00086253835,0.00012919426,0.00003938493,0.00008915003,0.00006597993,0.75628924,0.042430084,0.062255368,0.0008932675,0.13680261],"study_design_scores_gemma":[0.0000076093334,0.000038329974,0.00013567724,0.000006699151,0.000007208997,0.000027018314,0.0000050643425,0.9882919,0.0062498692,0.0034465604,0.001777637,0.0000063797256],"about_ca_topic_score_codex":0.0007325631,"about_ca_topic_score_gemma":0.0018577973,"teacher_disagreement_score":0.0014872808,"about_ca_system_score_codex":0.0005812761,"about_ca_system_score_gemma":0.0005369275,"threshold_uncertainty_score":0.004975438},"labels":[],"label_agreement":null},{"id":"W4413358580","doi":"10.18280/mmep.120725","title":"Efficiency-Driven Design and Implementation of a Reconfigurable 12-Bit ADC Using 14 nm FinFET Technology","year":2025,"lang":"en","type":"article","venue":"Mathematical Modelling and Engineering Problems","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":false,"route_ca_venue":true,"route_about_ca":false,"ca_institutions":"","funders":"Visvesvaraya Technological University; BMS College of Engineering; All India Council for Technical Education","keywords":"Bit (key); Computer science; Successive approximation ADC; Electronic engineering; Computer architecture; Electrical engineering; Engineering; Voltage; Capacitor; Computer network","score_opus":0.028104050236607295,"score_gpt":0.24947408784559022,"score_spread":0.22137003760898294,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4413358580","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.6150454,0.0026236677,0.33925515,0.00089302793,0.00041913555,0.00025585876,0.00040835358,0.001817951,0.039281383],"genre_scores_gemma":[0.9282042,0.00039817241,0.06714215,0.00007123876,0.000022635908,0.000059541057,0.00006905936,0.00002200909,0.004010958],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99991405,0.0000074809386,0.000006342043,0.000022927568,0.0000360119,0.000013258049],"domain_scores_gemma":[0.9999138,0.000012866718,0.000025384647,0.000010478479,0.000030348923,0.0000070166802],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000101859776,0.00023110531,0.0002067327,0.00016163995,0.00018133144,0.0003689702,0.0008288583,0.000418221,0.0009440356],"category_scores_gemma":[0.00019559747,0.00014072546,0.00021604705,0.0001801209,0.00012723215,0.00038457464,0.00012681125,0.00017885036,0.00031417605],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000189224,0.00014143842,0.001687898,0.00030472802,0.0000772985,0.0006485476,0.00012499264,0.053805497,0.85163164,0.009943618,0.0020283638,0.079416774],"study_design_scores_gemma":[0.00009720815,0.0011547745,0.0025874616,0.00006956435,0.000094214316,0.0010031114,0.00005504809,0.43696985,0.531432,0.0018048593,0.024653163,0.000078748664],"about_ca_topic_score_codex":0.0015743185,"about_ca_topic_score_gemma":0.0023379514,"teacher_disagreement_score":0.0015743185,"about_ca_system_score_codex":0.00052329636,"about_ca_system_score_gemma":0.00048884284,"threshold_uncertainty_score":0.0037968159},"labels":[],"label_agreement":null},{"id":"W4413477245","doi":"10.1007/978-3-031-84869-8_15","title":"Simulated Charge Stability in a MOSFET Linear Quantum Dot Array","year":2025,"lang":"en","type":"book-chapter","venue":"Springer proceedings in mathematics & statistics","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Quantum dot; MOSFET; Charge (physics); Stability (learning theory); Optoelectronics; Physics; Materials science; Computer science; Quantum mechanics; Transistor; Voltage","score_opus":0.027313194489888913,"score_gpt":0.2566785278401377,"score_spread":0.2293653333502488,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4413477245","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9790445,0.00015090808,0.0061998772,0.00043468346,0.00006186981,0.000019540888,0.0005036531,0.0002925695,0.013292349],"genre_scores_gemma":[0.99704045,0.00001926814,0.0010051765,0.00003610417,0.000005731609,0.000008830906,0.00007714419,0.000026026468,0.0017813236],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99990153,0.000018250237,0.000003873113,0.000017230894,0.000034886558,0.000024248597],"domain_scores_gemma":[0.9993098,0.0004296014,0.000030952033,0.00004185254,0.00013704924,0.000050757422],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00018575102,0.00016019779,0.0003848051,0.00024975467,0.00048554444,0.0006446707,0.0007912646,0.00087124034,0.006626891],"category_scores_gemma":[0.000970877,0.00021649389,0.0003153951,0.00045824822,0.00047130918,0.00050807756,0.00028414736,0.00037781976,0.00030139892],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00037742473,0.00013761672,0.003439042,0.00015259099,0.000070732225,0.00042134174,0.00017734438,0.9533652,0.023829436,0.01134819,0.002758744,0.0039223437],"study_design_scores_gemma":[0.000019596424,0.000049847553,0.0006144742,0.0000044608782,0.000008700149,0.000020918476,0.00002814309,0.99492115,0.003283047,0.00082713156,0.00021459183,0.000007917784],"about_ca_topic_score_codex":0.008680334,"about_ca_topic_score_gemma":0.006175409,"teacher_disagreement_score":0.008680334,"about_ca_system_score_codex":0.0015734544,"about_ca_system_score_gemma":0.0006297079,"threshold_uncertainty_score":0.022169173},"labels":[],"label_agreement":null},{"id":"W4414999833","doi":"10.1016/j.mattod.2025.10.004","title":"Hole mobility in compressively strained germanium on silicon exceeds 7 × 106 cm2V-1s−1","year":2025,"lang":"en","type":"article","venue":"Materials Today","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":2,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"National Research Council Canada","funders":"National Research Council Canada; Engineering and Physical Sciences Research Council; National Research Council","keywords":"Germanium; Silicon; Epitaxy; Semiconductor; Electronics; Electron mobility; Quantum; Silicon-germanium","score_opus":0.012618914240641047,"score_gpt":0.24996534529144784,"score_spread":0.2373464310508068,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4414999833","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.996327,0.00049608917,0.0011653458,0.000111661866,0.00003115143,0.0000053697863,0.00013058355,0.000045406745,0.0016875296],"genre_scores_gemma":[0.9981706,0.00023279713,0.0008013663,0.000017488346,0.000005785951,0.0000042413117,0.00009498665,0.000007012722,0.0006655977],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99995804,0.0000034807986,0.0000026422247,0.000012219014,0.000013215937,0.000010377365],"domain_scores_gemma":[0.9999361,0.00002356573,0.000017751097,0.000007980228,0.0000067239357,0.000007940433],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00009464014,0.00021858817,0.00012146877,0.00009882603,0.000158241,0.00032962655,0.0003058795,0.00026318638,0.0010056314],"category_scores_gemma":[0.00021166385,0.000112925554,0.000078872545,0.00008260249,0.00027141275,0.00030973283,0.00021572162,0.00020449793,0.00018106193],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000044437642,0.000017399441,0.0010814543,0.00007762978,0.000017542632,0.00012545723,0.000041807572,0.0013080682,0.9938864,0.0009858415,0.00024139289,0.0021725963],"study_design_scores_gemma":[0.000020343905,0.00029298392,0.0041192714,0.000013081595,0.00002659448,0.0000977057,0.00007204147,0.010148747,0.98223674,0.00041705955,0.0025424233,0.000013034422],"about_ca_topic_score_codex":0.00093267683,"about_ca_topic_score_gemma":0.002069423,"teacher_disagreement_score":0.0010056314,"about_ca_system_score_codex":0.00023840777,"about_ca_system_score_gemma":0.00016965241,"threshold_uncertainty_score":0.0033641458},"labels":[],"label_agreement":null},{"id":"W4415137554","doi":"10.48550/arxiv.2505.02662","title":"Integrated Silicon Nitride Devices via Inverse Design","year":2025,"lang":"en","type":"preprint","venue":"ArXiv.org","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"","funders":"Natural Sciences and Engineering Research Council of Canada; CMC Microsystems","keywords":"Photonics; Fabrication; Robustness (evolution); Silicon nitride; Silicon photonics; Silicon; Benchmarking; Inverse; Refractive index","score_opus":0.05998798400696178,"score_gpt":0.267126661628674,"score_spread":0.2071386776217122,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4415137554","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.5539817,0.0025761102,0.37093952,0.0004669366,0.00057748175,0.00017412257,0.00046388956,0.001709171,0.069111094],"genre_scores_gemma":[0.75274956,0.0006598672,0.2350109,0.00013975558,0.000035430665,0.00014624344,0.00035092706,0.00012068337,0.010786587],"study_design_codex":"bench_or_experimental","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9997687,0.000015916828,0.000009788088,0.000061383194,0.00012127301,0.00002298816],"domain_scores_gemma":[0.9998895,0.00001670581,0.000031016567,0.000024532637,0.00002986039,0.000008348219],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00015883025,0.00032966395,0.0002407312,0.00018201796,0.00015390234,0.0006415362,0.0005327155,0.00040489523,0.0011868039],"category_scores_gemma":[0.00022722247,0.00020773608,0.00026305116,0.00015195578,0.00029404994,0.00038946146,0.0004500862,0.00045616998,0.0004416849],"study_design_candidate":"simulation_or_modeling","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00007130894,0.00005915661,0.00053861504,0.00017055613,0.000033662312,0.00015172729,0.00009100777,0.0089427335,0.93860966,0.020630125,0.00097096333,0.029730486],"study_design_scores_gemma":[0.00003400453,0.000332979,0.0008582733,0.000027312935,0.000036464076,0.00043622495,0.000032311975,0.11178892,0.84375006,0.0047720857,0.03789345,0.000037843736],"about_ca_topic_score_codex":0.00025408517,"about_ca_topic_score_gemma":0.00068983674,"teacher_disagreement_score":0.0011868039,"about_ca_system_score_codex":0.0005850228,"about_ca_system_score_gemma":0.00030584013,"threshold_uncertainty_score":0.0042446256},"labels":[],"label_agreement":null},{"id":"W4415654271","doi":"10.1016/j.sse.2025.109285","title":"3D simulation of charge defect impact on an industrial 28 nm FD-SOI quantum dot","year":2025,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Nanoacademic Technologies; Institut quantique; Université de Sherbrooke","funders":"Canadian Nautical Research Society; Bundesbehörden der Schweizerischen Eidgenossenschaft; Canada Foundation for Innovation; Natural Sciences and Engineering Research Council of Canada; Fonds de recherche du Québec; Université de Sherbrooke; European Commission; Key Digital Technologies Joint Undertaking; Université Grenoble Alpes","keywords":"Quantum dot; Charge (physics); Sensitivity (control systems); Quantum; Quality (philosophy); Quantum computer; Quantum dot laser","score_opus":0.022404924793085163,"score_gpt":0.3112807901526339,"score_spread":0.28887586535954873,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4415654271","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9683612,0.00014982685,0.005574162,0.0005828132,0.00008181415,0.000022905238,0.00062503933,0.00027866877,0.024323523],"genre_scores_gemma":[0.99616003,0.000035376375,0.0014500967,0.000050665043,0.000005655671,0.000014636492,0.00011791992,0.000040129795,0.0021254267],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9998747,0.000012747731,0.000002995791,0.000016346055,0.0000530963,0.00004018195],"domain_scores_gemma":[0.9994997,0.00027035765,0.000036601774,0.000037769,0.000106071966,0.0000495263],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00018298844,0.0002917125,0.00051103014,0.00026348716,0.00083901646,0.00068006874,0.00080266583,0.0015272428,0.006440268],"category_scores_gemma":[0.0007516856,0.00035450427,0.00052007515,0.0005112818,0.0007231847,0.00051121967,0.000406745,0.0005796346,0.00031370943],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00012617046,0.000082895865,0.0020069738,0.00007128033,0.000031053532,0.00031503307,0.00009860965,0.9850572,0.0058073597,0.0036011722,0.0011513743,0.0016509034],"study_design_scores_gemma":[0.000014434243,0.000035778794,0.00059585564,0.0000032507864,0.000005689691,0.00001602564,0.000034190904,0.99755234,0.0011697916,0.000262413,0.00030347856,0.0000068666327],"about_ca_topic_score_codex":0.024008278,"about_ca_topic_score_gemma":0.01546698,"teacher_disagreement_score":0.024008278,"about_ca_system_score_codex":0.0017139962,"about_ca_system_score_gemma":0.001024649,"threshold_uncertainty_score":0.047737062},"labels":[],"label_agreement":null},{"id":"W4415743551","doi":"10.1109/tmtt.2025.3620214","title":"Multi-Submodel Soft-Switch ANN Framework for FET Modeling With Enhanced Convergence","year":2025,"lang":"","type":"article","venue":"IEEE Transactions on Microwave Theory and Techniques","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Carleton University","funders":"","keywords":"Extrapolation; Artificial neural network; Convergence (economics); Current (fluid); Key (lock); Voltage; Transistor","score_opus":0.021654333979374395,"score_gpt":0.28454727290719706,"score_spread":0.2628929389278227,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4415743551","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.009626996,0.00023630787,0.9868146,0.00008682766,0.000021687527,0.000024394036,0.000036984162,0.00036568256,0.002786548],"genre_scores_gemma":[0.75007224,0.0006100041,0.24043387,0.00014318415,0.00006254202,0.00032654748,0.00019083821,0.00016909327,0.00799166],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9998567,0.000049953385,0.0000075927765,0.000029236675,0.00004328126,0.00001313504],"domain_scores_gemma":[0.99977034,0.000114337294,0.00002726214,0.000027856233,0.00005000555,0.000010090764],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00047504308,0.0007225537,0.00059358566,0.00034883534,0.00033389352,0.0006352942,0.0012622067,0.0008426693,0.0021789665],"category_scores_gemma":[0.0007297759,0.00039164038,0.0008641878,0.0002709112,0.00032159442,0.00077825174,0.00056092325,0.0011193687,0.0004354045],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000018758656,0.000017315037,0.00013936975,0.000026872047,0.000019488309,0.000037358135,0.000023734341,0.9788472,0.0023647302,0.0051463787,0.00021099205,0.013147892],"study_design_scores_gemma":[3.9925683e-7,0.0000019099211,0.000009155145,8.935372e-7,9.058668e-7,0.0000015734919,5.2343216e-7,0.99938977,0.000107748594,0.0004201691,0.000066261106,6.9892565e-7],"about_ca_topic_score_codex":0.003952737,"about_ca_topic_score_gemma":0.0046654283,"teacher_disagreement_score":0.003952737,"about_ca_system_score_codex":0.0005941619,"about_ca_system_score_gemma":0.00057756994,"threshold_uncertainty_score":0.007859468},"labels":[],"label_agreement":null},{"id":"W596703679","doi":"10.7567/ssdm.2001.f-1-3","title":"Monitoring Degradation of Source/Drain Extension in Sub-Quarter-Micron MOSFETundefineds","year":2001,"lang":"en","type":"article","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":false,"route_ca_aff":false,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":true,"ca_institutions":"","funders":"","keywords":"MOSFET; Materials science; Degradation (telecommunications); Quarter (Canadian coin); Extension (predicate logic); Optoelectronics; Engineering physics; Electrical engineering; Electronic engineering; Transistor; Computer science; Voltage; Engineering","score_opus":0.020577406439065762,"score_gpt":0.2341833135368002,"score_spread":0.21360590709773442,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W596703679","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99756336,0.0002674393,0.0012074844,0.000028281758,0.000010146354,0.0000040226914,0.00018550895,0.00015132787,0.0005824545],"genre_scores_gemma":[0.99764425,0.000112433525,0.0010615061,0.000023314247,0.0000041897083,0.0000071534905,0.00013676187,0.000016125037,0.0009942731],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999138,0.0000047319113,0.0000041247754,0.000023643861,0.00003790766,0.000015682428],"domain_scores_gemma":[0.9996723,0.00009102899,0.0000675958,0.00004197963,0.00009989601,0.000027286907],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000101150086,0.00019773119,0.00022368279,0.0002141612,0.00018358613,0.00022440331,0.00032141662,0.00033712198,0.001131295],"category_scores_gemma":[0.0003487758,0.000106060805,0.00009359718,0.00022680104,0.00015341882,0.00040912224,0.00016015394,0.0002246585,0.00017676974],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00045816184,0.00006464653,0.005765504,0.00007518678,0.000012434927,0.00023963499,0.0002242852,0.0009776594,0.98179966,0.00014869914,0.00020522102,0.01002894],"study_design_scores_gemma":[0.000021211279,0.00066318695,0.048165005,0.000020591719,0.00003037628,0.00049381074,0.00015670652,0.021554558,0.9267412,0.00016409723,0.0019741037,0.000015194795],"about_ca_topic_score_codex":0.0011844768,"about_ca_topic_score_gemma":0.0019450606,"teacher_disagreement_score":0.0011844768,"about_ca_system_score_codex":0.00036356703,"about_ca_system_score_gemma":0.00015830605,"threshold_uncertainty_score":0.0037845373},"labels":[],"label_agreement":null},{"id":"W608011005","doi":"","title":"Proceedings of the 2004 Bipolar/BiCMOS Circuits and Technology Meeting, [Montréal, Canada, September 13-14, 2004]","year":2004,"lang":"en","type":"book","venue":"Institute of Electrical and Electronics Engineers eBooks","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":false,"route_ca_aff":false,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":true,"ca_institutions":"","funders":"","keywords":"BiCMOS; Library science; Electrical engineering; Engineering; Computer science; Transistor; Voltage","score_opus":0.004292540019194879,"score_gpt":0.16649136460090025,"score_spread":0.16219882458170537,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W608011005","genre_codex":"other","genre_gemma":"other","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"other","genre_consensus":"other","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.011742679,0.048823692,0.052828163,0.012061571,0.033670068,0.00058265094,0.01046934,0.004855571,0.82496625],"genre_scores_gemma":[0.005335886,0.008247882,0.0039841975,0.000360447,0.00066340057,0.000027385231,0.0022751512,0.00029377278,0.9788119],"study_design_codex":"not_applicable","study_design_gemma":"not_applicable","domain_scores_codex":[0.9997533,0.000016180114,0.000004213475,0.000026353036,0.00016034974,0.00003965945],"domain_scores_gemma":[0.9994566,0.000028485047,0.000008583707,0.000024550494,0.00040924983,0.00007252902],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00048156842,0.0010652469,0.00089433906,0.0012403292,0.0012642816,0.0023708865,0.0012512822,0.0007147027,0.090389885],"category_scores_gemma":[0.00055596116,0.0004211604,0.0004104181,0.0016190722,0.0003763375,0.00074072863,0.0005248189,0.00095436967,0.035823103],"study_design_candidate":"not_applicable","study_design_consensus":"not_applicable","about_ca_topic_candidate":true,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00006811965,0.000038478793,0.00023740588,0.00009885269,0.000014837939,0.000074274576,0.00003675459,0.0006507456,0.002600391,0.0009633525,0.9069426,0.08827419],"study_design_scores_gemma":[0.000019522742,0.00006855027,0.0025201659,0.00010694046,0.000042037504,0.00016927016,0.00009596985,0.002326909,0.003219005,0.0014864702,0.9899211,0.000024104635],"about_ca_topic_score_codex":0.16761169,"about_ca_topic_score_gemma":0.59246814,"teacher_disagreement_score":0.8323883,"about_ca_system_score_codex":0.0026634298,"about_ca_system_score_gemma":0.004261973,"threshold_uncertainty_score":0.33327216},"labels":[],"label_agreement":null},{"id":"W6888911866","doi":"10.25316/ir-14638","title":"The Nanaimo Free Press [Wednesday, June 11, 1884]","year":2020,"lang":"en","type":"other","venue":"VIUSpace (Vancouver Island University Library)","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":false,"route_ca_aff":false,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":true,"ca_institutions":"","funders":"","keywords":"","score_opus":0.008657364478187228,"score_gpt":0.1774729361463366,"score_spread":0.16881557166814937,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W6888911866","genre_codex":"other","genre_gemma":"other","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"other","genre_consensus":"other","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.0005816809,0.005792723,0.000091289636,0.0013594782,0.0021589666,0.000021787744,0.0013946416,0.00010796258,0.9884914],"genre_scores_gemma":[0.0007212726,0.0007432664,0.00003237613,0.00007479145,0.000050391878,0.0000066980983,0.00012248139,0.000042151114,0.99820673],"study_design_codex":"not_applicable","study_design_gemma":"not_applicable","domain_scores_codex":[0.9997621,0.000015323514,0.0000082328925,0.000040283005,0.000118864235,0.000055263143],"domain_scores_gemma":[0.99984145,0.00002050965,0.000007785424,0.000012661418,0.00007714262,0.00004047529],"candidate_categories":["insufficient_payload"],"consensus_categories":[],"category_scores_codex":[0.00023328261,0.00094602635,0.00048386934,0.0016664839,0.0044037974,0.0048775948,0.00064387853,0.0013327078,0.3488318],"category_scores_gemma":[0.00091342843,0.0004635612,0.00029870137,0.0023106313,0.00061921484,0.0016425092,0.0012833636,0.0024771602,0.14990221],"study_design_candidate":"not_applicable","study_design_consensus":"not_applicable","about_ca_topic_candidate":true,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000027938702,0.000010320004,0.00018711394,0.00008266289,0.0000032392668,0.00008357629,0.00015159712,0.000058532518,0.00013198699,0.013281265,0.94076854,0.045213223],"study_design_scores_gemma":[0.0000013470731,0.0000021849728,0.00033577063,0.00003630203,6.642776e-7,0.000013677377,0.000039930786,0.000010823308,0.000034340454,0.0002913137,0.99923146,0.00000224575],"about_ca_topic_score_codex":0.11572358,"about_ca_topic_score_gemma":0.48632702,"teacher_disagreement_score":0.8842764,"about_ca_system_score_codex":0.0036133034,"about_ca_system_score_gemma":0.0025024167,"threshold_uncertainty_score":0.9288124},"labels":[],"label_agreement":null},{"id":"W6888979287","doi":"10.25384/sage.14920578","title":"Supplemental Material, sj-pdf-1-caj-10.1177_08465371211026310 - Is Call Karma Real? Resident After-Hours On-Call Imaging at the University of Saskatchewan: An Assessment of Call Volumes Including Inter-Resident Variability","year":2021,"lang":"en","type":"article","venue":"Sage Journals Data","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":true,"ca_institutions":"","funders":"","keywords":"Karma; Call to action; MEDLINE; Association (psychology)","score_opus":0.03400595289435899,"score_gpt":0.3189461865923815,"score_spread":0.2849402336980225,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W6888979287","genre_codex":"dataset","genre_gemma":"dataset","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"dataset","genre_consensus":"dataset","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.0018012456,0.00023880578,0.0016221626,0.0041844244,0.0024316271,0.00072575494,0.75614446,0.010030558,0.22282092],"genre_scores_gemma":[0.012329644,0.0007750584,0.0066716536,0.0064600124,0.0016234708,0.00089324795,0.46914995,0.0072485586,0.49484843],"study_design_codex":"not_applicable","study_design_gemma":"observational","domain_scores_codex":[0.9985067,0.00010576365,0.00017545004,0.00013246568,0.00086390384,0.00021560192],"domain_scores_gemma":[0.9733762,0.007306032,0.0012172034,0.001444492,0.0140641155,0.0025919997],"candidate_categories":["insufficient_payload"],"consensus_categories":[],"category_scores_codex":[0.0015929866,0.00077422336,0.0008780776,0.0029218283,0.0015087877,0.004028837,0.0024311962,0.002201662,0.92172813],"category_scores_gemma":[0.022315547,0.0008393195,0.0004971602,0.0038810256,0.00041257762,0.0020393692,0.0018080359,0.0015620199,0.64484364],"study_design_candidate":"observational","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000047670957,0.00005709407,0.0003690004,0.00007586238,0.0000026714254,0.000019833189,0.000009357525,0.000030299278,0.000079276935,0.00010817876,0.9911964,0.008004393],"study_design_scores_gemma":[0.00032921438,0.00009622824,0.01233876,0.00040282565,0.00001614471,0.00021957235,0.00021459625,0.00035107427,0.0004856297,0.0012506555,0.98423773,0.000057535526],"about_ca_topic_score_codex":0.054249287,"about_ca_topic_score_gemma":0.09932217,"teacher_disagreement_score":0.92172813,"about_ca_system_score_codex":0.0026990843,"about_ca_system_score_gemma":0.0055354456,"threshold_uncertainty_score":0.11164522},"labels":[],"label_agreement":null},{"id":"W6888993595","doi":"10.25384/sage.21778129","title":"sj-docx-1-mpp-10.1177_23814683221143782 – Supplemental material for Cost Utility of Supporting Family-Based Care to Prevent HIV and Deaths among Orphaned and Separated Children in East Africa: A Markov Model–Based Simulation","year":2022,"lang":"en","type":"article","venue":"Sage Journals Data","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Toronto","funders":"","keywords":"Human immunodeficiency virus (HIV); Markov model; Cost–utility analysis; Markov chain; Health care; Risk assessment","score_opus":0.03984546462434503,"score_gpt":0.30704672694687124,"score_spread":0.2672012623225262,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W6888993595","genre_codex":"dataset","genre_gemma":"dataset","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"dataset","genre_consensus":"dataset","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.0006399032,0.000040965366,0.0014771756,0.0009120529,0.00019959586,0.00018292484,0.9484453,0.0018352383,0.046266846],"genre_scores_gemma":[0.023939027,0.0004036681,0.010910775,0.0015124668,0.00030569002,0.0017593714,0.8300572,0.0073296307,0.12378215],"study_design_codex":"not_applicable","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9990158,0.00015939168,0.00008668174,0.00011123566,0.0004939295,0.00013300577],"domain_scores_gemma":[0.9835849,0.00999428,0.00065358693,0.00072153937,0.0043947874,0.0006510175],"candidate_categories":["insufficient_payload"],"consensus_categories":[],"category_scores_codex":[0.0017358391,0.0007867013,0.0006986284,0.0018834046,0.00067441026,0.0026088767,0.0022598773,0.001930214,0.86364305],"category_scores_gemma":[0.021446364,0.0009800559,0.00089682016,0.0034945502,0.00026507507,0.0020690244,0.001156344,0.00150473,0.43874612],"study_design_candidate":"simulation_or_modeling","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00004875583,0.000058805712,0.0005483883,0.00023105963,0.000009565498,0.00001849282,0.000017138656,0.0019721554,0.000048511407,0.0015713644,0.9898707,0.0056051756],"study_design_scores_gemma":[0.0011210638,0.00013388868,0.007622605,0.0009202301,0.000046638837,0.000115957206,0.00036093668,0.017215796,0.00085126696,0.014657527,0.95685935,0.000094795076],"about_ca_topic_score_codex":0.032498702,"about_ca_topic_score_gemma":0.04026621,"teacher_disagreement_score":0.86364305,"about_ca_system_score_codex":0.0026485866,"about_ca_system_score_gemma":0.0032616497,"threshold_uncertainty_score":0.19449657},"labels":[],"label_agreement":null},{"id":"W6889001545","doi":"10.25384/sage.16943909","title":"sj-docx-1-cpa-10.1177_07067437211053288 - Supplemental material for Suicidality and Associated Factors Among Individuals Assessed for Fetal Alcohol Spectrum Disorder Across the Lifespan in Canada","year":2021,"lang":"en","type":"article","venue":"Sage Journals Data","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":true,"ca_institutions":"","funders":"","keywords":"Fetal Alcohol Spectrum Disorder; Alcohol use disorder; Fetal alcohol; Alcohol dependence; Poison control; Risk factor; Fetal alcohol syndrome","score_opus":0.04669825044338832,"score_gpt":0.3135083120805294,"score_spread":0.2668100616371411,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W6889001545","genre_codex":"dataset","genre_gemma":"dataset","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"dataset","genre_consensus":"dataset","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.00020420976,0.000044120017,0.000114575,0.000287927,0.00011928445,0.00011002904,0.98843443,0.0005431799,0.010142258],"genre_scores_gemma":[0.0053391876,0.00049816625,0.0015558435,0.0010675151,0.00016091618,0.0006509789,0.90433323,0.0015450267,0.08484918],"study_design_codex":"not_applicable","study_design_gemma":"observational","domain_scores_codex":[0.998569,0.00005562454,0.00014552414,0.000152975,0.00071395776,0.0003628978],"domain_scores_gemma":[0.9760685,0.0040898602,0.00083166617,0.0009018513,0.016339554,0.0017684657],"candidate_categories":["insufficient_payload"],"consensus_categories":[],"category_scores_codex":[0.0011672204,0.0012625235,0.0014508174,0.004500048,0.0033490113,0.0042148014,0.0035565323,0.0015663868,0.8995257],"category_scores_gemma":[0.022258824,0.0013599538,0.0011288507,0.008088097,0.00075339444,0.0022548481,0.0021385907,0.0016656606,0.5064093],"study_design_candidate":"observational","study_design_consensus":null,"about_ca_topic_candidate":true,"about_ca_topic_consensus":true,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000030697727,0.00002298921,0.0007660144,0.00023862299,0.0000051515585,0.000012378399,0.000035997833,0.000044499408,0.00003546226,0.000115180985,0.99497366,0.0037195138],"study_design_scores_gemma":[0.0005816986,0.00005871172,0.0329401,0.0012547771,0.000048088867,0.00015867126,0.0010882003,0.00043138105,0.0005274284,0.0012945203,0.96150476,0.00011157967],"about_ca_topic_score_codex":0.7873105,"about_ca_topic_score_gemma":0.84982437,"teacher_disagreement_score":0.8995257,"about_ca_system_score_codex":0.009889216,"about_ca_system_score_gemma":0.022927148,"threshold_uncertainty_score":0.42788416},"labels":[],"label_agreement":null},{"id":"W6889974536","doi":"10.3389/fcimb.2024.1466333.s006","title":"Table 1_Association between genetic clades and cancer prevalence suggested by French-wide study of oncogenic small ruminant β-retrovirus diversity.xlsx","year":2024,"lang":"en","type":"dataset","venue":"Figshare","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":true,"ca_institutions":"","funders":"","keywords":"Clade; Phylogenetic tree; Genetic diversity; Genome; Cancer; Flock; Phylogenetics; Strain (injury); Incidence (geometry)","score_opus":0.03294415382211339,"score_gpt":0.2556917418254111,"score_spread":0.22274758800329772,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W6889974536","genre_codex":"dataset","genre_gemma":"dataset","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"dataset","genre_consensus":"dataset","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.25014606,0.0036503319,0.0014655351,0.00079129724,0.00021842873,0.00012221094,0.7277645,0.00088098884,0.014960601],"genre_scores_gemma":[0.6810811,0.0028867568,0.004526154,0.0004921659,0.00030646467,0.00033151382,0.2916331,0.00037234236,0.01837031],"study_design_codex":"observational","study_design_gemma":"not_applicable","domain_scores_codex":[0.9995221,0.000094873736,0.000064218904,0.00017111657,0.000071498245,0.000076270866],"domain_scores_gemma":[0.99772245,0.000904187,0.00061889546,0.000148109,0.00039511404,0.00021122102],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0005537529,0.00045357013,0.0005131828,0.0033885206,0.0005702388,0.0007760829,0.00041247162,0.00042048463,0.087415755],"category_scores_gemma":[0.003305742,0.00012299845,0.0007615018,0.003925043,0.00021004223,0.00047535446,0.00031520185,0.00041973952,0.0043348325],"study_design_candidate":"not_applicable","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0005598672,0.000032468626,0.88833106,0.0012577542,0.000555443,0.00026972746,0.00023606484,0.00045224302,0.0014307204,0.0007467954,0.08110719,0.025020778],"study_design_scores_gemma":[0.00004318327,0.00009165932,0.9697576,0.00018138753,0.00012411339,0.00052420114,0.00028328292,0.00037622813,0.00018487021,0.00021625248,0.028202737,0.000014487211],"about_ca_topic_score_codex":0.01975412,"about_ca_topic_score_gemma":0.02075933,"teacher_disagreement_score":0.087415755,"about_ca_system_score_codex":0.0003790021,"about_ca_system_score_gemma":0.00055088877,"threshold_uncertainty_score":0.2924348},"labels":[],"label_agreement":null},{"id":"W6892591354","doi":"10.5281/zenodo.11503806","title":"Male Organ size booster♻ )(+27782365105)( ♻ )Penis enlargement cream/oil/pills in Burgersfort,Musina","year":2024,"lang":"en","type":"article","venue":"Zenodo (CERN European Organization for Nuclear Research)","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":true,"ca_institutions":"","funders":"","keywords":"Penis; Ejaculation; Resizing; Breast enlargement; Pill","score_opus":0.0239585118891023,"score_gpt":0.2342569526692968,"score_spread":0.2102984407801945,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W6892591354","genre_codex":"other","genre_gemma":"other","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"other","genre_consensus":"other","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.0032007212,0.0029472185,0.0008529942,0.0030269953,0.0039056,0.00041676097,0.0033190947,0.002720774,0.97960997],"genre_scores_gemma":[0.002780114,0.0005917542,0.00026052698,0.00090470765,0.00021117603,0.00004323823,0.00041374424,0.00020575228,0.994589],"study_design_codex":"not_applicable","study_design_gemma":"not_applicable","domain_scores_codex":[0.99975055,0.000020267584,0.000012374377,0.00006272455,0.0001024914,0.00005158194],"domain_scores_gemma":[0.9991955,0.0000849809,0.000047929934,0.00003430724,0.00025086635,0.00038651007],"candidate_categories":["insufficient_payload"],"consensus_categories":["insufficient_payload"],"category_scores_codex":[0.00032257056,0.00076010684,0.0006540602,0.0006701726,0.00065896084,0.0016365765,0.0006853973,0.0013755255,0.92428327],"category_scores_gemma":[0.00089198176,0.00033121137,0.0004925336,0.00025136743,0.00021429909,0.00091001746,0.0012824514,0.0010174841,0.81511605],"study_design_candidate":"not_applicable","study_design_consensus":"not_applicable","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00028865982,0.00014300208,0.00042683317,0.0003040322,0.0000059957283,0.00018677009,0.00005391233,0.00004241287,0.002488375,0.0005675342,0.71601194,0.27948046],"study_design_scores_gemma":[0.000046339566,0.00023098722,0.001399095,0.00012045021,0.000005653817,0.00029420396,0.000050994484,0.00004263411,0.00042308884,0.00008260196,0.997297,0.0000070563538],"about_ca_topic_score_codex":0.0012347561,"about_ca_topic_score_gemma":0.0030691656,"teacher_disagreement_score":0.075716734,"about_ca_system_score_codex":0.00039584847,"about_ca_system_score_gemma":0.00046600195,"threshold_uncertainty_score":0.108000636},"labels":[],"label_agreement":null},{"id":"W6893330081","doi":"10.5281/zenodo.14980879","title":"Fig. 11 in A revision of the genus Sclerocoelus Marshall (Diptera: Sphaeroceridae)","year":2025,"lang":"en","type":"other","venue":"Zenodo (CERN European Organization for Nuclear Research)","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Guelph","funders":"","keywords":"Paratype; Holotype; Genus; Scale (ratio); Paraphernalia","score_opus":0.023680792437436923,"score_gpt":0.23164333410872961,"score_spread":0.2079625416712927,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W6893330081","genre_codex":"other","genre_gemma":"other","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"other","genre_consensus":"other","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.06884458,0.07023936,0.060072355,0.008045799,0.046274886,0.0022696871,0.017941339,0.0064012627,0.7199108],"genre_scores_gemma":[0.29614353,0.044350542,0.107086055,0.004469178,0.007341281,0.0015459913,0.02338852,0.0012640778,0.51441085],"study_design_codex":"design_other","study_design_gemma":"not_applicable","domain_scores_codex":[0.9998209,0.000038429578,0.000023269406,0.000045772416,0.00004777979,0.00002394908],"domain_scores_gemma":[0.9998066,0.000031554773,0.000027519989,0.000028188895,0.00007296785,0.000033236243],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00034021522,0.00092910207,0.0002703598,0.0024900318,0.0010039858,0.00067707227,0.00077460444,0.00067706127,0.02955184],"category_scores_gemma":[0.00074703706,0.00021017126,0.0003229278,0.0011015822,0.0010768884,0.0010783297,0.0008973393,0.0009267596,0.01221118],"study_design_candidate":"not_applicable","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0001528985,0.000041135394,0.005302264,0.0009851231,0.000043553384,0.00058375346,0.00079845474,0.00035961234,0.006917504,0.0096586505,0.23987627,0.73528075],"study_design_scores_gemma":[0.0000101759615,0.000052052026,0.009504154,0.00023644244,0.000029420531,0.00077608525,0.00021433788,0.00017259002,0.000581749,0.0007320592,0.98767614,0.000014910083],"about_ca_topic_score_codex":0.0053928844,"about_ca_topic_score_gemma":0.012720893,"teacher_disagreement_score":0.02955184,"about_ca_system_score_codex":0.0005987441,"about_ca_system_score_gemma":0.0007501892,"threshold_uncertainty_score":0.09886074},"labels":[],"label_agreement":null},{"id":"W6903230597","doi":"10.11575/prism/49573","title":"Supporting an OER Finding Service: Utilizing Past Experiences","year":2025,"lang":"en","type":"other","venue":"Open MIND","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":true,"ca_institutions":"","funders":"","keywords":"Open educational resources; Staffing; Presentation (obstetrics); Service (business); Workflow; Service-learning; Higher education; Resource (disambiguation)","score_opus":0.05800227995872433,"score_gpt":0.35386217510570084,"score_spread":0.2958598951469765,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W6903230597","genre_codex":"empirical","genre_gemma":"other","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"other","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.8829428,0.0032953974,0.0077859247,0.01979984,0.001319474,0.00038126446,0.00037628124,0.00023592,0.08386319],"genre_scores_gemma":[0.96050227,0.0044027907,0.0056320443,0.0035032947,0.0002094413,0.00020450045,0.00026804305,0.00027237655,0.025005268],"study_design_codex":"qualitative","study_design_gemma":"not_applicable","domain_scores_codex":[0.9896309,0.0066206255,0.00033350874,0.0005997652,0.0014885025,0.0013267568],"domain_scores_gemma":[0.97924554,0.008360974,0.0010870236,0.0010602248,0.004614575,0.0056316326],"candidate_categories":["open_science"],"consensus_categories":[],"category_scores_codex":[0.014238291,0.0005980856,0.0005783872,0.0027830536,0.012535478,0.012009822,0.0029419006,0.002467018,0.00724163],"category_scores_gemma":[0.029099027,0.0006973895,0.0005531433,0.0025243498,0.00727833,0.012995531,0.01041908,0.0051813326,0.0018877722],"study_design_candidate":"not_applicable","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00007114393,0.0005937734,0.011681643,0.00042835614,0.00002126307,0.0019893784,0.9003289,0.00013281956,0.00049403886,0.0045695934,0.01804165,0.06164753],"study_design_scores_gemma":[0.0000053565213,0.00014704175,0.0026656985,0.00040687554,0.0000140052025,0.00058199477,0.9163328,0.00025111475,0.00040101053,0.00075062277,0.07839784,0.000045599612],"about_ca_topic_score_codex":0.010137821,"about_ca_topic_score_gemma":0.04187582,"teacher_disagreement_score":0.9970581,"about_ca_system_score_codex":0.0051741824,"about_ca_system_score_gemma":0.005464346,"threshold_uncertainty_score":0.07530022},"labels":[],"label_agreement":null},{"id":"W6907837202","doi":"10.25318/3310087901-eng","title":"Reasons business or organization does not plan to use artificial intelligence (AI) in producing goods or delivering services over the next 12 months, third quarter of 2024","year":2024,"lang":"en","type":"dataset","venue":"Statistics Canada Dissemination","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":true,"ca_institutions":"","funders":"","keywords":"Quarter (Canadian coin); Plan (archaeology); Goods and services; Business plan","score_opus":0.020404542176100538,"score_gpt":0.2658397177564096,"score_spread":0.24543517558030903,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W6907837202","genre_codex":"dataset","genre_gemma":"dataset","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"dataset","genre_consensus":"dataset","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.00010998648,0.000051011484,0.000017947388,0.000111348156,0.000030802712,0.0000051289067,0.9990119,0.00005279666,0.00060906843],"genre_scores_gemma":[0.000463176,0.00006847185,0.00008500996,0.00006848628,0.000012727432,0.000028010887,0.9981331,0.000014502229,0.0011266206],"study_design_codex":"not_applicable","study_design_gemma":"not_applicable","domain_scores_codex":[0.99901795,0.00009807111,0.00015330965,0.0002283549,0.00029862102,0.00020379455],"domain_scores_gemma":[0.9967753,0.00057544326,0.0005034571,0.0003943232,0.0013916002,0.00035991982],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00079504546,0.0017184567,0.0012749328,0.003464877,0.0009336959,0.0024219814,0.0023906422,0.0022173843,0.048499435],"category_scores_gemma":[0.0077251326,0.00065644825,0.0013351548,0.00720671,0.00038786174,0.0015015756,0.0014118575,0.0018952362,0.06300624],"study_design_candidate":"not_applicable","study_design_consensus":"not_applicable","about_ca_topic_candidate":true,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00003725908,0.000012813283,0.0012392186,0.00021827176,0.000015804964,0.000011724895,0.000006080522,0.00012651843,0.000020369189,0.0002417394,0.99712014,0.0009501079],"study_design_scores_gemma":[0.00037914992,0.000024178482,0.016804527,0.00043747414,0.00004715857,0.00007090353,0.0001431305,0.0007251809,0.00022592486,0.0009539117,0.9801435,0.00004503053],"about_ca_topic_score_codex":0.1722418,"about_ca_topic_score_gemma":0.27383357,"teacher_disagreement_score":0.8277582,"about_ca_system_score_codex":0.0028836876,"about_ca_system_score_gemma":0.005272971,"threshold_uncertainty_score":0.3424785},"labels":[],"label_agreement":null},{"id":"W6920148948","doi":"10.60692/b94r8-b2724","title":"Evolutionary dynamics on graphs: Efficient method for weak selection","year":2009,"lang":"en","type":"article","venue":"Greater South Information System","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of British Columbia","funders":"","keywords":"Evolutionary dynamics; Population; Graph; Evolutionary game theory; Markov chain; Markov process; Replicator equation; Degree (music)","score_opus":0.01995276327470839,"score_gpt":0.22878633811584576,"score_spread":0.20883357484113738,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W6920148948","genre_codex":"methods","genre_gemma":"methods","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"methods","genre_consensus":"methods","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.002273612,0.000067615845,0.99589455,0.000064258704,0.00002656335,0.00004697368,0.000041252522,0.00046990058,0.0011153334],"genre_scores_gemma":[0.13627079,0.00037050364,0.85468686,0.00019298501,0.00012244175,0.00092427235,0.00033942275,0.000960562,0.0061321706],"study_design_codex":"simulation_or_modeling","study_design_gemma":"theoretical_or_conceptual","domain_scores_codex":[0.99929106,0.00032638773,0.000033036315,0.00006721864,0.00021950576,0.000062770334],"domain_scores_gemma":[0.9974491,0.0015686515,0.00015986762,0.00034949914,0.00036468118,0.00010826688],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0017111974,0.0012052383,0.0011470824,0.0022725563,0.0007785651,0.0010714189,0.0020440484,0.0012786735,0.006746402],"category_scores_gemma":[0.0068268734,0.0006140308,0.0013074701,0.0013467906,0.0009990142,0.00155912,0.0021415376,0.0018144101,0.0031997385],"study_design_candidate":"theoretical_or_conceptual","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00010860465,0.0001319081,0.0015443393,0.00026076488,0.00013477376,0.0004040761,0.00022546142,0.6274165,0.006601141,0.18587086,0.005538728,0.17176293],"study_design_scores_gemma":[0.000012349195,0.000008716696,0.000053797998,0.000005623405,0.00000550602,0.000022155216,0.000008540294,0.9748103,0.0002808145,0.023507161,0.0012796144,0.0000054291727],"about_ca_topic_score_codex":0.003372943,"about_ca_topic_score_gemma":0.0034472912,"teacher_disagreement_score":0.006746402,"about_ca_system_score_codex":0.0007144871,"about_ca_system_score_gemma":0.0011598974,"threshold_uncertainty_score":0.022569},"labels":[],"label_agreement":null},{"id":"W6925357515","doi":"10.17182/hepdata.50548.v1/t34","title":"\"Table 34\" of \"Electroproduction of Eta Mesons in the S11(1535) Resonance Region at High Momentum Transfer\"","year":2008,"lang":"en","type":"dataset","venue":"HEPData","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Regina","funders":"","keywords":"Meson; Resonance (particle physics); Momentum (technical analysis); Cross section (physics); Differential (mechanical device); Scattering cross-section","score_opus":0.025160534691158278,"score_gpt":0.22567787405895345,"score_spread":0.20051733936779517,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W6925357515","genre_codex":"dataset","genre_gemma":"dataset","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"dataset","genre_consensus":"dataset","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.0003741649,0.00006109344,0.00003124558,0.000027774871,0.0000099426225,0.000006520917,0.99874,0.00015454408,0.0005948471],"genre_scores_gemma":[0.0011342544,0.00008466408,0.00013152129,0.000032406606,0.00000559147,0.000037702404,0.9978933,0.000030876603,0.0006496189],"study_design_codex":"not_applicable","study_design_gemma":"not_applicable","domain_scores_codex":[0.99944776,0.000068472764,0.00006041352,0.00015632222,0.00015863955,0.000108304484],"domain_scores_gemma":[0.99832064,0.00051468983,0.00031613026,0.00023146281,0.0004867307,0.00013037403],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00048932974,0.0020722176,0.001327987,0.0035162084,0.00072259153,0.0013251903,0.0021769435,0.00120224,0.04653938],"category_scores_gemma":[0.0025263773,0.000540943,0.00130052,0.0065066665,0.00030274384,0.000717858,0.0011085554,0.001392561,0.033721197],"study_design_candidate":"not_applicable","study_design_consensus":"not_applicable","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0002699111,0.000050488226,0.004157735,0.0024408055,0.0001425652,0.0000822943,0.000026583768,0.0010793717,0.00059987284,0.00065434497,0.9854489,0.0050471234],"study_design_scores_gemma":[0.00089048705,0.00006996248,0.03812197,0.00043810162,0.00017089029,0.00014726634,0.000098521035,0.000901582,0.002236582,0.0013831009,0.9554936,0.000047933463],"about_ca_topic_score_codex":0.028701339,"about_ca_topic_score_gemma":0.040949043,"teacher_disagreement_score":0.04653938,"about_ca_system_score_codex":0.0012299153,"about_ca_system_score_gemma":0.0016970153,"threshold_uncertainty_score":0.15568978},"labels":[],"label_agreement":null},{"id":"W6926349663","doi":"10.25316/ir-13029","title":"The Nanaimo Free Press [Friday, July 12, 1889]","year":2019,"lang":"en","type":"other","venue":"VIURRSpace (Vancouver Island University)","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":false,"route_ca_aff":false,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":true,"ca_institutions":"","funders":"","keywords":"","score_opus":0.01023054427191309,"score_gpt":0.18851330441793124,"score_spread":0.17828276014601815,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W6926349663","genre_codex":"other","genre_gemma":"other","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"other","genre_consensus":"other","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.00064696156,0.011652725,0.00017343527,0.0028717685,0.0038754889,0.00002136832,0.0012015061,0.00010231295,0.97945446],"genre_scores_gemma":[0.0012950436,0.0013758473,0.000048926802,0.00014169082,0.00011416937,0.0000071722907,0.0001134303,0.00004485932,0.99685884],"study_design_codex":"not_applicable","study_design_gemma":"not_applicable","domain_scores_codex":[0.99967897,0.000025643041,0.000012664843,0.000060123242,0.00015722445,0.000065492786],"domain_scores_gemma":[0.99983823,0.000023108723,0.000010593756,0.0000146207085,0.00007912132,0.000034304987],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00026040483,0.0008431547,0.00046561525,0.001662542,0.003988408,0.0053262752,0.0006308898,0.0015818365,0.2373494],"category_scores_gemma":[0.0010721709,0.00040939552,0.00027641948,0.0022768343,0.0008105059,0.0018880059,0.0013595782,0.0024264997,0.0897177],"study_design_candidate":"not_applicable","study_design_consensus":"not_applicable","about_ca_topic_candidate":true,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000029796925,0.000009614415,0.00017820892,0.00008556708,0.0000040154177,0.00010070773,0.00021177228,0.00006438069,0.00012458369,0.031580277,0.9207602,0.04685086],"study_design_scores_gemma":[0.0000010787975,0.0000015170281,0.00020875537,0.00003719485,5.377129e-7,0.000014656439,0.000037878497,0.00000942392,0.000029232548,0.00046922412,0.9991885,0.000001935638],"about_ca_topic_score_codex":0.09036329,"about_ca_topic_score_gemma":0.39399886,"teacher_disagreement_score":0.90963674,"about_ca_system_score_codex":0.00416073,"about_ca_system_score_gemma":0.0023239087,"threshold_uncertainty_score":0.79401284},"labels":[],"label_agreement":null},{"id":"W6931297199","doi":"10.5281/zenodo.5243733","title":"Leptella Hall & Clarke 1892","year":2011,"lang":"en","type":"article","venue":"Zenodo (CERN European Organization for Nuclear Research)","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":true,"ca_institutions":"","funders":"","keywords":"Natural (archaeology); Obituary; Genus; Type (biology)","score_opus":0.06544472520952405,"score_gpt":0.22238721661361108,"score_spread":0.15694249140408703,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W6931297199","genre_codex":"other","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.23008929,0.08979037,0.02238182,0.00416466,0.00583487,0.0016122236,0.014391575,0.0023052755,0.62943],"genre_scores_gemma":[0.84499437,0.024324127,0.0118319765,0.0026117729,0.0010381882,0.00049922295,0.0051040873,0.00011913033,0.10947715],"study_design_codex":"design_other","study_design_gemma":"not_applicable","domain_scores_codex":[0.9997844,0.000029595363,0.000017807033,0.000053673702,0.00007516513,0.00003932875],"domain_scores_gemma":[0.9997291,0.00004353096,0.00008463803,0.000017866467,0.00008669418,0.000038286973],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00011929072,0.0010159531,0.0005179156,0.0019388489,0.0019094124,0.0007254826,0.00087230443,0.0009372642,0.020366818],"category_scores_gemma":[0.00055545056,0.0003314609,0.00017767702,0.0010438105,0.0005427967,0.0016966825,0.001102337,0.00065028766,0.0062957876],"study_design_candidate":"not_applicable","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0012526875,0.00010912155,0.021233492,0.0023424274,0.000085360756,0.0027027517,0.0013881382,0.0016520558,0.039458204,0.008506005,0.12919483,0.792075],"study_design_scores_gemma":[0.00014586719,0.00025524257,0.046417084,0.0009085541,0.00008216556,0.0032385378,0.0014198028,0.0007002974,0.0049233916,0.0014020563,0.9404469,0.000060050235],"about_ca_topic_score_codex":0.01533592,"about_ca_topic_score_gemma":0.020043517,"teacher_disagreement_score":0.020366818,"about_ca_system_score_codex":0.0014495847,"about_ca_system_score_gemma":0.0009370026,"threshold_uncertainty_score":0.06813377},"labels":[],"label_agreement":null},{"id":"W6958227135","doi":"10.60692/dc69y-86416","title":"Numerical Investigations of Nanowire Gate-All-Around Negative Capacitance GaAs/InN Tunnel FET","year":2022,"lang":"en","type":"article","venue":"Greater South Information System","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Ottawa","funders":"","keywords":"Transconductance; Heterojunction; Ferroelectricity; Negative impedance converter; Nanowire; Transistor; Thermionic emission; Capacitance; Quantum tunnelling","score_opus":0.039832935766377024,"score_gpt":0.20777174870590023,"score_spread":0.1679388129395232,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W6958227135","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.969702,0.0004084895,0.012665238,0.00031334616,0.000036791553,0.000029167864,0.00037302158,0.000113542854,0.016358383],"genre_scores_gemma":[0.9961946,0.00007270043,0.0026801843,0.000024007093,0.000004387948,0.000015577618,0.00006324351,0.000010546689,0.00093489117],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99994946,0.000010585906,0.0000022092304,0.000007943031,0.00001385453,0.000015879148],"domain_scores_gemma":[0.9997644,0.00012179661,0.00003121797,0.000013277851,0.000050942526,0.000018418235],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00016953211,0.00021977519,0.00033284692,0.0003420173,0.00035389664,0.00040326273,0.000510904,0.00077881635,0.001862244],"category_scores_gemma":[0.00077175716,0.00019559002,0.00031385396,0.00030760784,0.00036645032,0.00036004646,0.00020894961,0.00022974733,0.00009670888],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00005383466,0.000047906386,0.0040321546,0.000084006504,0.00003174764,0.0004186419,0.00005674551,0.9786876,0.007264998,0.00701639,0.00035442377,0.0019516357],"study_design_scores_gemma":[0.000005161427,0.000010603861,0.00042181436,0.0000038263597,0.000003774582,0.000015886128,0.000012841837,0.99865997,0.00035254483,0.00035808687,0.00015232521,0.0000031394495],"about_ca_topic_score_codex":0.011677272,"about_ca_topic_score_gemma":0.009389041,"teacher_disagreement_score":0.011677272,"about_ca_system_score_codex":0.0006510907,"about_ca_system_score_gemma":0.00046126958,"threshold_uncertainty_score":0.023218572},"labels":[],"label_agreement":null},{"id":"W6968782437","doi":"10.5281/zenodo.5642796","title":"Material Growth and Material Characterization for Conventional &amp; Nanoelectronic Devices Applications: An Innovative Prospective","year":2021,"lang":"en","type":"article","venue":"Zenodo (CERN European Organization for Nuclear Research)","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Nexen (Canada)","funders":"","keywords":"Characterization (materials science); Software; Software development; Electronics; Electronic materials","score_opus":0.02314068190955915,"score_gpt":0.2438596428473584,"score_spread":0.22071896093779925,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W6968782437","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.08202708,0.002883693,0.8774302,0.0007908477,0.00024115329,0.00038034486,0.0042722947,0.013217634,0.018756745],"genre_scores_gemma":[0.20948295,0.0023786516,0.764018,0.00019255166,0.000092413014,0.00052896066,0.0063222377,0.0016678727,0.0153163215],"study_design_codex":"bench_or_experimental","study_design_gemma":"theoretical_or_conceptual","domain_scores_codex":[0.9997596,0.00002016374,0.000011851163,0.00004221403,0.00015784518,0.000008388023],"domain_scores_gemma":[0.9996124,0.000091510956,0.000025950465,0.00010088522,0.00015765043,0.000011621049],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00041210084,0.0005580689,0.0003581359,0.0005535025,0.0003328371,0.0006626567,0.0009479861,0.00054154044,0.005528253],"category_scores_gemma":[0.0006457951,0.00036382253,0.00025956082,0.0005941681,0.00020017754,0.0011364039,0.00031653617,0.00047511933,0.0027350646],"study_design_candidate":"theoretical_or_conceptual","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00019718028,0.00012585573,0.0030892272,0.0008863154,0.000036307716,0.0001205148,0.00015646395,0.008122939,0.7155551,0.012204774,0.0143019995,0.24520336],"study_design_scores_gemma":[0.000056813944,0.00019289873,0.008789242,0.000068530506,0.00004352829,0.0007213074,0.0000841798,0.1250652,0.7481755,0.007931711,0.108803816,0.00006733453],"about_ca_topic_score_codex":0.0008362832,"about_ca_topic_score_gemma":0.0010802525,"teacher_disagreement_score":0.005528253,"about_ca_system_score_codex":0.00040944997,"about_ca_system_score_gemma":0.0005546171,"threshold_uncertainty_score":0.018493831},"labels":[],"label_agreement":null},{"id":"W6976645824","doi":"10.60692/xycwg-te430","title":"Numerical Investigations of Nanowire Gate-All-Around Negative Capacitance GaAs/InN Tunnel FET","year":2022,"lang":"en","type":"article","venue":"Greater South Information System","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Ottawa","funders":"","keywords":"Transconductance; Heterojunction; Ferroelectricity; Negative impedance converter; Nanowire; Transistor; Thermionic emission; Capacitance; Quantum tunnelling","score_opus":0.039832935766377024,"score_gpt":0.20777174870590023,"score_spread":0.1679388129395232,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W6976645824","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.969702,0.0004084895,0.012665238,0.00031334616,0.000036791553,0.000029167864,0.00037302158,0.000113542854,0.016358383],"genre_scores_gemma":[0.9961946,0.00007270043,0.0026801843,0.000024007093,0.000004387948,0.000015577618,0.00006324351,0.000010546689,0.00093489117],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99994946,0.000010585906,0.0000022092304,0.000007943031,0.00001385453,0.000015879148],"domain_scores_gemma":[0.9997644,0.00012179661,0.00003121797,0.000013277851,0.000050942526,0.000018418235],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00016953211,0.00021977519,0.00033284692,0.0003420173,0.00035389664,0.00040326273,0.000510904,0.00077881635,0.001862244],"category_scores_gemma":[0.00077175716,0.00019559002,0.00031385396,0.00030760784,0.00036645032,0.00036004646,0.00020894961,0.00022974733,0.00009670888],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00005383466,0.000047906386,0.0040321546,0.000084006504,0.00003174764,0.0004186419,0.00005674551,0.9786876,0.007264998,0.00701639,0.00035442377,0.0019516357],"study_design_scores_gemma":[0.000005161427,0.000010603861,0.00042181436,0.0000038263597,0.000003774582,0.000015886128,0.000012841837,0.99865997,0.00035254483,0.00035808687,0.00015232521,0.0000031394495],"about_ca_topic_score_codex":0.011677272,"about_ca_topic_score_gemma":0.009389041,"teacher_disagreement_score":0.011677272,"about_ca_system_score_codex":0.0006510907,"about_ca_system_score_gemma":0.00046126958,"threshold_uncertainty_score":0.023218572},"labels":[],"label_agreement":null},{"id":"W6991119659","doi":"","title":"Fabrication and Characterization of a Quarter Micron Gate CMOS Using Ultra-thin Si Film(30nm) on SIMOX Substrates","year":2006,"lang":"en","type":"article","venue":"Tokyo Tech Research Repository (Tokyo Institute of Technology)","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":false,"route_ca_aff":false,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":true,"ca_institutions":"","funders":"","keywords":"Fabrication; Characterization (materials science); CMOS; Silicon; Quarter (Canadian coin); Substrate (aquarium); Integrated circuit","score_opus":0.027171154247543232,"score_gpt":0.27659882029533717,"score_spread":0.24942766604779393,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W6991119659","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9918928,0.0003554378,0.004837968,0.00009746856,0.0000457926,0.000043174183,0.00050407083,0.00019680985,0.0020264694],"genre_scores_gemma":[0.98587775,0.0002736173,0.01105727,0.00004529968,0.000010161114,0.00002960062,0.00027037103,0.000029434479,0.0024066053],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998971,0.0000044571584,0.0000056583062,0.000028844303,0.000049277587,0.000014684188],"domain_scores_gemma":[0.99969876,0.000056339864,0.00006764866,0.00005168479,0.00009930537,0.000026231597],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00013817211,0.00021428763,0.0002963086,0.00020356066,0.00023769579,0.00032292254,0.0005039496,0.00032526927,0.0010521064],"category_scores_gemma":[0.00026875737,0.00020769388,0.00012282687,0.00024487262,0.00014997448,0.00030670152,0.00014200686,0.00014408417,0.00024488522],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00007428539,0.000013662333,0.00078914635,0.00006194594,0.000010098403,0.00014943922,0.00007084893,0.0002460082,0.9962864,0.00012167829,0.00018309869,0.0019933518],"study_design_scores_gemma":[0.000025735564,0.000612294,0.012786624,0.000010737698,0.000033930057,0.00032066068,0.000107671345,0.0050292667,0.97768956,0.00005871624,0.0033125787,0.000012176867],"about_ca_topic_score_codex":0.0017178074,"about_ca_topic_score_gemma":0.0038391396,"teacher_disagreement_score":0.0017178074,"about_ca_system_score_codex":0.0003499208,"about_ca_system_score_gemma":0.00038383954,"threshold_uncertainty_score":0.0035196543},"labels":[],"label_agreement":null},{"id":"W6995434979","doi":"","title":"Odyssey Semiconductor Technologies Reports Second Quarter 2023 Financial Results","year":2023,"lang":"en","type":"other","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":false,"route_ca_aff":false,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":true,"ca_institutions":"","funders":"","keywords":"Quarter (Canadian coin); Financial Audit; Semiconductor industry; Work (physics)","score_opus":0.014387519341296008,"score_gpt":0.22681335614500361,"score_spread":0.2124258368037076,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W6995434979","genre_codex":"other","genre_gemma":"other","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"other","genre_consensus":"other","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.0024696602,0.002294716,0.0013218477,0.012875555,0.0115398,0.00026972595,0.009816424,0.0016842319,0.95772797],"genre_scores_gemma":[0.003078761,0.0006394587,0.00035998327,0.0014637732,0.00037644716,0.00003839329,0.002848244,0.00019832,0.9909966],"study_design_codex":"not_applicable","study_design_gemma":"not_applicable","domain_scores_codex":[0.99833715,0.00006349496,0.000030441053,0.00010821983,0.0012045918,0.00025595722],"domain_scores_gemma":[0.99830556,0.00012773805,0.00006112985,0.00007802976,0.0007855718,0.000641901],"candidate_categories":["insufficient_payload"],"consensus_categories":[],"category_scores_codex":[0.0016488997,0.0011261555,0.0005629323,0.0018329839,0.001529409,0.0064353454,0.000883774,0.0032197575,0.36684835],"category_scores_gemma":[0.002688866,0.00033282346,0.0008512666,0.0008597108,0.00048567334,0.0016841752,0.0012704615,0.0028767732,0.2979114],"study_design_candidate":"not_applicable","study_design_consensus":"not_applicable","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000059143036,0.00004978135,0.00006549084,0.000028032737,0.00000257539,0.00003714269,0.000003842029,0.00007326581,0.00032838652,0.0019086226,0.98215127,0.015292408],"study_design_scores_gemma":[0.000055822213,0.00007156594,0.0006323975,0.00003748398,0.000005547458,0.000052960848,0.000027370932,0.0005682051,0.00062140194,0.0014270698,0.99649113,0.000008982147],"about_ca_topic_score_codex":0.011717065,"about_ca_topic_score_gemma":0.026304822,"teacher_disagreement_score":0.36684835,"about_ca_system_score_codex":0.0025486252,"about_ca_system_score_gemma":0.0060724746,"threshold_uncertainty_score":0.90311396},"labels":[],"label_agreement":null},{"id":"W7002370286","doi":"","title":"Numerical Modeling of Self-heating in MOSFET and FinFET Basic Logic Gates Using Effective Thermal Conductivity","year":2012,"lang":"en","type":"dissertation","venue":"Library and Archives Canada (Government of Canada)","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":false,"route_ca_venue":true,"route_about_ca":false,"ca_institutions":"","funders":"","keywords":"MOSFET; Thermal conductivity; Thermal; Logic gate; Minification; Boundary value problem; AND gate; Junction temperature; Scale (ratio)","score_opus":0.007242864000544662,"score_gpt":0.17747295469760196,"score_spread":0.1702300906970573,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W7002370286","genre_codex":"empirical","genre_gemma":"methods","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"methods","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.8566874,0.00041328452,0.117267124,0.00028880622,0.000053241285,0.000070931164,0.00029977257,0.0003123118,0.024607139],"genre_scores_gemma":[0.9894595,0.00012318167,0.007863548,0.000025286676,0.000005878501,0.0000411578,0.00004629734,0.000026945343,0.002408253],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9999101,0.000019248446,0.0000042654333,0.000011786465,0.000031067237,0.0000234617],"domain_scores_gemma":[0.9997712,0.00011937289,0.00002924226,0.000019740313,0.000044516677,0.000015911817],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00021917294,0.00029606972,0.00043031212,0.00030971543,0.0003652923,0.00048679684,0.000670424,0.0007963383,0.0008345406],"category_scores_gemma":[0.0006040161,0.00029863502,0.00047836156,0.00036107076,0.000593833,0.00046046716,0.00025348435,0.00025785321,0.000110845795],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000014375633,0.000009766442,0.00028878578,0.000012056301,0.0000056154922,0.00003740962,0.00002099288,0.9930888,0.0036347068,0.002209024,0.000058213544,0.0006202416],"study_design_scores_gemma":[0.000002804571,0.000005021962,0.00007769697,0.0000015498167,0.0000013527427,0.0000038049373,0.0000023395019,0.99907434,0.00053259236,0.00023460865,0.00006196527,0.000001938968],"about_ca_topic_score_codex":0.010577837,"about_ca_topic_score_gemma":0.0069425455,"teacher_disagreement_score":0.010577837,"about_ca_system_score_codex":0.0012485017,"about_ca_system_score_gemma":0.0008953575,"threshold_uncertainty_score":0.021032512},"labels":[],"label_agreement":null},{"id":"W7022383176","doi":"","title":"Mountain Legacies","year":2022,"lang":"en","type":"other","venue":"UVic’s Research and Learning Repository (University of Victoria)","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":true,"ca_institutions":"","funders":"","keywords":"Indigenous; Shadow (psychology); Memoir; Digitization; Obituary; Colonialism; Welsh","score_opus":0.023699833521210016,"score_gpt":0.25258270236262625,"score_spread":0.22888286884141623,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W7022383176","genre_codex":"other","genre_gemma":"other","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"other","genre_consensus":"other","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.006115976,0.0042033764,0.0010754493,0.016205838,0.00845533,0.00005954243,0.0008864874,0.0004416679,0.9625563],"genre_scores_gemma":[0.03559431,0.0013815062,0.0008703404,0.0050334944,0.0016399377,0.000049022055,0.0007060304,0.00056456635,0.95416075],"study_design_codex":"not_applicable","study_design_gemma":"not_applicable","domain_scores_codex":[0.99944526,0.00013128539,0.000014154341,0.000090610636,0.0001437423,0.00017494665],"domain_scores_gemma":[0.99955505,0.000057245496,0.00002796681,0.00005844882,0.000083480736,0.00021774521],"candidate_categories":["insufficient_payload"],"consensus_categories":[],"category_scores_codex":[0.0006360281,0.00048357886,0.00033080427,0.0006060705,0.009817671,0.005221924,0.00076954777,0.001253119,0.2195333],"category_scores_gemma":[0.0015671379,0.00023510534,0.00034478202,0.00075384544,0.0012641582,0.0024921873,0.004489269,0.0030241178,0.041444916],"study_design_candidate":"not_applicable","study_design_consensus":"not_applicable","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00003970737,0.000014833401,0.00026747666,0.00007117195,0.000003870875,0.0002622194,0.0061474065,0.00002473145,0.00018697507,0.04900351,0.9138722,0.03010598],"study_design_scores_gemma":[9.0828956e-7,0.0000026041664,0.00013550924,0.00002072872,4.1418494e-7,0.000042217645,0.000765244,0.000004952247,0.000011055433,0.00042708244,0.99858826,0.0000011307696],"about_ca_topic_score_codex":0.008935489,"about_ca_topic_score_gemma":0.037933934,"teacher_disagreement_score":0.7804667,"about_ca_system_score_codex":0.0019427042,"about_ca_system_score_gemma":0.0011610643,"threshold_uncertainty_score":0.7344121},"labels":[],"label_agreement":null},{"id":"W7034040323","doi":"","title":"A study on the comparative and combinatorial efficacy of resveratrol with angiotensin-converting enzyme inhibitor and angiotensin receptor blocker/neprilysin inhibitor in myocardial infarction","year":2019,"lang":"en","type":"dissertation","venue":"Mspace (University of Manitoba)","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Manitoba","funders":"","keywords":"Myocardial infarction; ACE inhibitor; Heart failure; Resveratrol; Valsartan; Angiotensin-converting enzyme","score_opus":0.017454698292100286,"score_gpt":0.21692601107482595,"score_spread":0.19947131278272567,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W7034040323","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9886982,0.008273511,0.0007187298,0.00026356278,0.00027779274,0.0002661447,0.00020022958,0.000026678645,0.001275186],"genre_scores_gemma":[0.9853976,0.008458611,0.0019895914,0.00049471384,0.00020173221,0.00032173784,0.0003772083,0.000011332204,0.0027476083],"study_design_codex":"bench_or_experimental","study_design_gemma":"observational","domain_scores_codex":[0.9997621,0.00006816367,0.0000278929,0.00006133153,0.00003533712,0.000045198976],"domain_scores_gemma":[0.99980074,0.000031417847,0.000032454314,0.000021986321,0.00002808743,0.000085360865],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0005250791,0.00053561945,0.0017415424,0.00046458578,0.0003042502,0.00044426156,0.00041104268,0.0006444759,0.002007238],"category_scores_gemma":[0.00029011242,0.0002943453,0.0012707332,0.00035752458,0.00037581692,0.00071024144,0.00033124673,0.0015499745,0.00027886135],"study_design_candidate":"observational","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.12633863,0.1244881,0.0029220101,0.00476995,0.0030096069,0.00068917754,0.00043126108,0.0005320366,0.6421775,0.0009392241,0.0013518939,0.092350565],"study_design_scores_gemma":[0.021560812,0.80854946,0.02557963,0.00019180651,0.005057582,0.0006836591,0.0004127156,0.0011768065,0.124577664,0.00043033133,0.01166959,0.000109815046],"about_ca_topic_score_codex":0.00041366077,"about_ca_topic_score_gemma":0.0012505637,"teacher_disagreement_score":0.002007238,"about_ca_system_score_codex":0.00016495814,"about_ca_system_score_gemma":0.00043799044,"threshold_uncertainty_score":0.0067148805},"labels":[],"label_agreement":null},{"id":"W7098024373","doi":"","title":"Departement d&amp;apos;informatique, Universite Laval Ste-Foy (Quebec), Canada G1K 7P4","year":2007,"lang":"en","type":"article","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":true,"ca_institutions":"","funders":"","keywords":"Process (computing); Work (physics); Field (mathematics); Key (lock)","score_opus":0.03421736469795928,"score_gpt":0.260215859426245,"score_spread":0.2259984947282857,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W7098024373","genre_codex":"other","genre_gemma":"other","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"other","genre_consensus":"other","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.020032797,0.034382645,0.023682836,0.046190746,0.009922426,0.00025830115,0.012325933,0.0042863796,0.84891784],"genre_scores_gemma":[0.027896566,0.0069434745,0.009673914,0.00072305615,0.0007849165,0.000038754653,0.0017594161,0.000402849,0.95177704],"study_design_codex":"not_applicable","study_design_gemma":"not_applicable","domain_scores_codex":[0.99835455,0.00011495274,0.000054807027,0.0004633678,0.0006643035,0.00034790672],"domain_scores_gemma":[0.9951481,0.0014885687,0.00012470529,0.00021541759,0.0019989146,0.0010243035],"candidate_categories":["insufficient_payload"],"consensus_categories":["insufficient_payload"],"category_scores_codex":[0.0010269436,0.0011933168,0.0012699473,0.0025045876,0.0024360986,0.0042750896,0.0016091036,0.0017444903,0.32957444],"category_scores_gemma":[0.0038007696,0.0005358901,0.0005843134,0.0016709636,0.0012130383,0.0013545608,0.0008216485,0.002140473,0.12353861],"study_design_candidate":"not_applicable","study_design_consensus":"not_applicable","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00047363367,0.00018900655,0.004452482,0.00085266586,0.00006778251,0.00060000434,0.0006603258,0.0027455362,0.003342404,0.04229214,0.5879334,0.35639063],"study_design_scores_gemma":[0.00004321957,0.0000456872,0.0057193325,0.0001307182,0.00001933887,0.00032996462,0.00025957177,0.0039024446,0.002008339,0.0026919935,0.9848083,0.000041171785],"about_ca_topic_score_codex":0.46384454,"about_ca_topic_score_gemma":0.45223,"teacher_disagreement_score":0.67042553,"about_ca_system_score_codex":0.019286418,"about_ca_system_score_gemma":0.011812553,"threshold_uncertainty_score":0.9562807},"labels":[],"label_agreement":null},{"id":"W7099279006","doi":"","title":"SUMMARY","year":2015,"lang":"en","type":"article","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":true,"ca_institutions":"","funders":"","keywords":"Larva; Simple eye in invertebrates; Biological dispersal; Polygyny; Homogeneous; Queen (butterfly)","score_opus":0.041726741044781634,"score_gpt":0.24271672108556622,"score_spread":0.20098998004078458,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W7099279006","genre_codex":"other","genre_gemma":"other","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"other","genre_consensus":"other","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.016227648,0.006641622,0.011694322,0.016061107,0.009201347,0.000444857,0.030599676,0.0030015954,0.90612775],"genre_scores_gemma":[0.03964822,0.0025567915,0.0040506534,0.003096785,0.000868661,0.00014776962,0.014745753,0.00039330634,0.93449205],"study_design_codex":"not_applicable","study_design_gemma":"not_applicable","domain_scores_codex":[0.999522,0.000058155485,0.00003530765,0.0001024713,0.00021726714,0.00006496344],"domain_scores_gemma":[0.9990833,0.00009650441,0.00005797544,0.00012391729,0.0004304983,0.00020768636],"candidate_categories":["insufficient_payload"],"consensus_categories":[],"category_scores_codex":[0.0006612385,0.0003948795,0.00024428125,0.00082100555,0.0009730282,0.0018755605,0.0006142333,0.00073916535,0.30818096],"category_scores_gemma":[0.0014467135,0.00013158258,0.00022514183,0.0007440279,0.00025061314,0.00079116505,0.0013304898,0.00046920386,0.17264886],"study_design_candidate":"not_applicable","study_design_consensus":"not_applicable","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0001455466,0.00006131455,0.0030793517,0.00036506358,0.000010141558,0.00027392118,0.00034442436,0.00022092581,0.0028694395,0.013306998,0.63649285,0.3428301],"study_design_scores_gemma":[0.0000055470923,0.000029836194,0.0025683776,0.0000659931,0.0000029862085,0.00017035639,0.00010399098,0.000049234135,0.00046022024,0.001159934,0.9953779,0.0000057737593],"about_ca_topic_score_codex":0.0032078442,"about_ca_topic_score_gemma":0.0058698915,"teacher_disagreement_score":0.6918191,"about_ca_system_score_codex":0.0007761184,"about_ca_system_score_gemma":0.0013003047,"threshold_uncertainty_score":0},"labels":[],"label_agreement":null},{"id":"W7124828245","doi":"10.1515/9783112213049-006","title":"135Chapter 6 A hybrid quantum-inspired model for sustainable electrification strategy: an energy-aware planning approach for cost-optimized data centers","year":2025,"lang":"","type":"book-chapter","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Algoma University","funders":"","keywords":"Electrification; Field (mathematics); Sustainable development; Rural electrification; Sustainability","score_opus":0.10330409442629714,"score_gpt":0.30681749691988025,"score_spread":0.20351340249358313,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W7124828245","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.009841751,0.005973028,0.48850223,0.006996843,0.0014904117,0.00017995626,0.0013826448,0.0006803678,0.48495263],"genre_scores_gemma":[0.31440744,0.00987406,0.15774512,0.0014792674,0.0004730799,0.00038282797,0.00090449175,0.00078874175,0.51394504],"study_design_codex":"theoretical_or_conceptual","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9999124,0.000015496626,0.00000290084,0.000016170718,0.000042217136,0.000010862315],"domain_scores_gemma":[0.9999409,0.000020766402,0.0000039411784,0.0000067542583,0.000021729322,0.0000059881136],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0001679103,0.00041796252,0.00043418413,0.0002926839,0.0005338803,0.0013520289,0.0006656617,0.0008766932,0.03643255],"category_scores_gemma":[0.00031869792,0.0002871381,0.0005939133,0.0004896188,0.0004805986,0.0012779441,0.0005789685,0.0011287326,0.0037079311],"study_design_candidate":"simulation_or_modeling","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000019280253,0.000039169932,0.00013039634,0.00016992005,0.000015068338,0.000106202315,0.00009118667,0.11872671,0.0025763821,0.8081066,0.041362483,0.028656585],"study_design_scores_gemma":[0.000017242206,0.00004021163,0.0003300284,0.00014964475,0.000021741818,0.00016500955,0.0001120672,0.32188213,0.0024115536,0.4441499,0.23068239,0.00003805019],"about_ca_topic_score_codex":0.0033632016,"about_ca_topic_score_gemma":0.0051526986,"teacher_disagreement_score":0.03643255,"about_ca_system_score_codex":0.0013158119,"about_ca_system_score_gemma":0.00091716135,"threshold_uncertainty_score":0.12187898},"labels":[],"label_agreement":null},{"id":"W7140099706","doi":"10.1134/s1063739725602188","title":"Accounting for Mobility Reduction, Body Effect, and Drift Velocity Saturation in the Extrinsic MOSFET Saturation Current Equation","year":2025,"lang":"en","type":"article","venue":"Russian Microelectronics","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Iron Ore Company (Canada)","funders":"","keywords":"Saturation (graph theory); Velocity saturation; MOSFET; Saturation velocity; Saturation current; Drift velocity","score_opus":0.00857944729028845,"score_gpt":0.2577271481123986,"score_spread":0.24914770082211016,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W7140099706","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.051581193,0.003960154,0.89953613,0.00064663397,0.0005549968,0.00013177155,0.0004025808,0.0007836477,0.042402904],"genre_scores_gemma":[0.82233405,0.004619197,0.11135458,0.00058389414,0.00032516275,0.00020320609,0.00066694256,0.0004772955,0.059435822],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99973375,0.000025480917,0.000020451114,0.000052536558,0.00012875797,0.000039069004],"domain_scores_gemma":[0.99975353,0.0000569739,0.000023491335,0.000029009283,0.00012830354,0.00000861241],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0002693746,0.00077326,0.0006106942,0.0005847393,0.00027466042,0.00060697604,0.0011139781,0.00068779936,0.003323072],"category_scores_gemma":[0.0009207824,0.0002253422,0.0009421966,0.0003227985,0.00032551744,0.0014378375,0.00064627134,0.000892238,0.0011625676],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00013725495,0.00013600886,0.0058159125,0.0012334769,0.00013775154,0.0019269448,0.0008344952,0.33464056,0.2214422,0.29343262,0.010697014,0.12956576],"study_design_scores_gemma":[0.00001300369,0.00010635264,0.0013056939,0.00009323406,0.00008325652,0.0009898783,0.00004761304,0.9287769,0.025053935,0.017785178,0.025711944,0.00003294098],"about_ca_topic_score_codex":0.0030260994,"about_ca_topic_score_gemma":0.0035422728,"teacher_disagreement_score":0.003323072,"about_ca_system_score_codex":0.0007349877,"about_ca_system_score_gemma":0.00073894457,"threshold_uncertainty_score":0.011116803},"labels":[],"label_agreement":null},{"id":"W7140898312","doi":"10.1109/sisimpact67725.2025.11439292","title":"Parameters Identification of MESFET by Including Thermal Effect, Surface and Substrate Trappings Using Modified Hippopotamus Optimization","year":2025,"lang":"","type":"article","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Horizon College and Seminary","funders":"","keywords":"Substrate (aquarium); Thermal; Surface (topology); Hippopotamus; Identification (biology); MESFET","score_opus":0.02781061253209559,"score_gpt":0.2753616740880653,"score_spread":0.24755106155596968,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W7140898312","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.2668799,0.0005179018,0.7231034,0.00019444723,0.000031477568,0.00009897392,0.00023016188,0.00075601775,0.008187791],"genre_scores_gemma":[0.9027865,0.00013657223,0.09439157,0.000031291296,0.000009204267,0.00012343557,0.00019061055,0.00010329256,0.0022274617],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99992454,0.00001851605,0.000003756995,0.000017935521,0.000023884797,0.000011382369],"domain_scores_gemma":[0.99989843,0.000044648754,0.000015359137,0.000009000869,0.000028691802,0.0000038439794],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00023097532,0.00052831543,0.00040767065,0.00035624346,0.00017947268,0.0004164812,0.0004219265,0.00042757255,0.00088164647],"category_scores_gemma":[0.00045369272,0.00023153362,0.0005344791,0.00022898498,0.00013557248,0.00039374933,0.0002071277,0.00021487073,0.00018608697],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000035759316,0.0000223283,0.0014181387,0.000046819783,0.00005120166,0.000067418754,0.000038474212,0.96274984,0.01168729,0.0021395793,0.00048642364,0.021256706],"study_design_scores_gemma":[0.0000030828649,0.000013750036,0.00021552265,0.0000023640462,0.000007886476,0.000009697145,0.0000062667064,0.99732506,0.0018216117,0.0003267141,0.00026496063,0.0000030542772],"about_ca_topic_score_codex":0.0023724132,"about_ca_topic_score_gemma":0.0050692395,"teacher_disagreement_score":0.0023724132,"about_ca_system_score_codex":0.00038030525,"about_ca_system_score_gemma":0.000558067,"threshold_uncertainty_score":0.004717171},"labels":[],"label_agreement":null},{"id":"W7162452500","doi":"10.1109/redw68988.2025.11534031","title":"Soft Error Evaluation of 12nm FinFET Technology Based on COTS GPU Neutron Testing","year":2025,"lang":"","type":"article","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Saskatchewan","funders":"","keywords":"Soft error; Error detection and correction; Software; Neutron; Reliability (semiconductor)","score_opus":0.05616717659459442,"score_gpt":0.3160154019333363,"score_spread":0.2598482253387419,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W7162452500","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9845821,0.00067472947,0.0062681707,0.0002669916,0.0001335146,0.000027352326,0.00047031415,0.00078164507,0.0067950636],"genre_scores_gemma":[0.99540776,0.000077838005,0.0016077049,0.000034798362,0.00000539191,0.0000067649694,0.00009712026,0.000041171294,0.002721563],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9995784,0.00004533701,0.000021830327,0.00007663199,0.00021542411,0.00006236907],"domain_scores_gemma":[0.99876994,0.00030188836,0.00015904137,0.0001247973,0.0005930523,0.000051275354],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00034269536,0.00040786015,0.00036875837,0.00041504405,0.00029859773,0.0004182094,0.0010620732,0.0005877575,0.0030999605],"category_scores_gemma":[0.0013230767,0.00013082156,0.0002584836,0.00044609164,0.00023080251,0.0009172527,0.00028081163,0.00024252426,0.0004758371],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0028532501,0.00036272514,0.050233554,0.0011248682,0.0003153733,0.003570779,0.001027312,0.15817274,0.65381473,0.008042732,0.010733751,0.10974814],"study_design_scores_gemma":[0.00008611179,0.0038217911,0.030713618,0.00015348641,0.00019600888,0.0014860709,0.0005677414,0.48451155,0.46785682,0.0014055166,0.009085189,0.0001160454],"about_ca_topic_score_codex":0.0056943838,"about_ca_topic_score_gemma":0.010757168,"teacher_disagreement_score":0.0056943838,"about_ca_system_score_codex":0.0010983177,"about_ca_system_score_gemma":0.00061035727,"threshold_uncertainty_score":0.011322498},"labels":[],"label_agreement":null},{"id":"W981535933","doi":"10.1109/mnrc15848.2009.5338945","title":"Development of a reliable low cost NMOS process for microfabrication courses and proof-of-concepts in research","year":2009,"lang":"en","type":"article","venue":"","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Université de Sherbrooke","funders":"","keywords":"NMOS logic; Microfabrication; Electronics; Process (computing); Computer science; Electrical engineering; Set (abstract data type); Amplifier; Microelectromechanical systems; Die (integrated circuit); Electronic engineering; Computer hardware; Engineering; CMOS; Materials science; Nanotechnology; Voltage; Operating system; Transistor; Fabrication","score_opus":0.09554445224287311,"score_gpt":0.3977008327179919,"score_spread":0.3021563804751188,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W981535933","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.27271467,0.0017326854,0.6973978,0.0011397393,0.00065446476,0.0020544871,0.0004949898,0.002890163,0.020920953],"genre_scores_gemma":[0.24400806,0.0008207479,0.7422036,0.00013666945,0.000077468365,0.0007489033,0.00030502075,0.00027256153,0.011426928],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99952066,0.00002833028,0.000016964408,0.000049716542,0.00035412327,0.00003025531],"domain_scores_gemma":[0.9996228,0.000056299064,0.000056254572,0.0000669426,0.00015403402,0.00004353787],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00066735485,0.00041370638,0.00028239677,0.0003558938,0.0004534735,0.00048185594,0.0007566556,0.00076355424,0.0034855336],"category_scores_gemma":[0.00068010535,0.00035965093,0.00026294234,0.00021093876,0.000221635,0.00074325333,0.0003806676,0.00072430307,0.0023040914],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000033439366,0.00010298253,0.0003125111,0.00014399324,0.0000041946264,0.00013349166,0.00008145571,0.0006413829,0.963082,0.003538447,0.00086322485,0.031062888],"study_design_scores_gemma":[0.00004918293,0.0008340821,0.0012327082,0.0000232081,0.000011413338,0.00057627895,0.000039404586,0.007963928,0.9536808,0.0007790402,0.034792032,0.000017954828],"about_ca_topic_score_codex":0.0003320223,"about_ca_topic_score_gemma":0.00071643817,"teacher_disagreement_score":0.0034855336,"about_ca_system_score_codex":0.00042154317,"about_ca_system_score_gemma":0.0012039755,"threshold_uncertainty_score":0.011660278},"labels":[],"label_agreement":null}]}