{"meta":{"query_hash":"e9faef15b656","filters":{"topic":"Thin-Film Transistor Technologies"},"cohort_total":686,"direct_labels_cover":0,"predictions_cover":686,"exported":686,"export_cap":100000,"truncated":false,"label_status":"direct model label, unvalidated","prediction_status":"machine_predicted_unvalidated (Codex and Gemma teacher distillation)","score_status":"score_only:v0-immature-baseline","snapshot":{"source":"OpenAlex, pinned release, all 482 partitions","release":"2026-06-24","frame_built":"2026-07-12"},"permalink":"https://metacan.xera.ac/q/e9faef15b656","api":"https://metacan.xera.ac/api/v1/cohort?topic=Thin-Film+Transistor+Technologies"},"results":[{"id":"W1495717782","doi":"10.1557/proc-0989-a19-04","title":"Temperature Dependence of Leakage Current in Segmented a-Si:H <i>n-i-p</i> Photodiodes","year":2007,"lang":"en","type":"article","venue":"MRS Proceedings","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":2,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Photodiode; Materials science; Optoelectronics; Reverse bias; Dark current; Current (fluid); Detector; Amorphous silicon; Silicon; Atmospheric temperature range; Leakage (economics); Biasing; Photodetector; Optics; Crystalline silicon; Physics; Diode; Voltage","score_opus":0.00815446073833809,"score_gpt":0.21713728371277113,"score_spread":0.20898282297443305,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1495717782","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99650025,0.00057892513,0.0013060421,0.00010685299,0.00001845241,0.000007783754,0.00024587102,0.00014610436,0.0010897529],"genre_scores_gemma":[0.99867046,0.00010587163,0.0002998579,0.000025742758,0.000008962465,0.0000064356836,0.0001366848,0.0000333479,0.00071262754],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9997534,0.000021545966,0.000013642836,0.00007039612,0.00006909935,0.00007198748],"domain_scores_gemma":[0.99895537,0.00043626034,0.0001965146,0.00009990714,0.00025445505,0.00005747458],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00023211025,0.00022696263,0.00031294202,0.0002719453,0.0002760039,0.00043856452,0.00051786174,0.00049894635,0.0014941045],"category_scores_gemma":[0.0010954719,0.0002451249,0.00023126334,0.00028595954,0.00046203684,0.00073615735,0.00021734166,0.0005037844,0.0004895913],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0009772358,0.000058068876,0.0031179646,0.00010647478,0.00004203409,0.00030055098,0.00033991717,0.001421387,0.9906737,0.00025798508,0.00031166757,0.0023929176],"study_design_scores_gemma":[0.000020039906,0.0005321019,0.020927105,0.00002414134,0.000042936972,0.00031976667,0.00014168736,0.01070591,0.9664913,0.0001343165,0.00063536817,0.000025340136],"about_ca_topic_score_codex":0.001602494,"about_ca_topic_score_gemma":0.002437397,"teacher_disagreement_score":0.001602494,"about_ca_system_score_codex":0.0008601307,"about_ca_system_score_gemma":0.0002226041,"threshold_uncertainty_score":0.006240666},"labels":[],"label_agreement":null},{"id":"W1534283269","doi":"10.1109/leos.2004.1363172","title":"Can a-Si meet requirements of amoled backplanes","year":2004,"lang":"en","type":"article","venue":"","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Backplane; AMOLED; OLED; Computer science; Ranging; Materials science; Optoelectronics; Thin-film transistor; Active matrix; Computer hardware; Telecommunications; Layer (electronics); Nanotechnology","score_opus":0.013198832288895847,"score_gpt":0.20301163470405562,"score_spread":0.18981280241515977,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1534283269","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.6230611,0.015560873,0.11261295,0.00976901,0.0017113831,0.00015617661,0.00064138777,0.0018126663,0.23467459],"genre_scores_gemma":[0.9468682,0.005654557,0.03320205,0.0008572161,0.00038359055,0.0001054522,0.00027043355,0.0002100474,0.012448637],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9996587,0.000031463092,0.000015156816,0.00003928729,0.00015821126,0.000097210745],"domain_scores_gemma":[0.99950266,0.00019131231,0.000055634824,0.00006593607,0.0001401152,0.000044375454],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00046394032,0.000444172,0.0006270742,0.000257388,0.0005259642,0.0012953825,0.0005299379,0.0015113666,0.005960831],"category_scores_gemma":[0.001508565,0.00024916316,0.00022987815,0.00017698226,0.00030671377,0.0024910944,0.00058989605,0.00073385745,0.0038295519],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0004593724,0.000100083715,0.0014844217,0.0006775921,0.000027745791,0.00084356574,0.0002555759,0.011641474,0.8398898,0.039386317,0.007646007,0.09758802],"study_design_scores_gemma":[0.00018156144,0.00179844,0.005509362,0.00038946013,0.00008575112,0.0038340986,0.0018129854,0.10367077,0.54188454,0.07864347,0.26203948,0.00015008097],"about_ca_topic_score_codex":0.00040550882,"about_ca_topic_score_gemma":0.00068492745,"teacher_disagreement_score":0.005960831,"about_ca_system_score_codex":0.00030867013,"about_ca_system_score_gemma":0.00025101393,"threshold_uncertainty_score":0.019940913},"labels":[],"label_agreement":null},{"id":"W1542152851","doi":"","title":"Enhanced blue sensitivity in ITO/a-SiNx:H/a-Si:H MIS photodetectors","year":2003,"lang":"en","type":"article","venue":"UCL Discovery (University College London)","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Dark current; Materials science; Optoelectronics; Photodetector; Plasma-enhanced chemical vapor deposition; Thin film; Photodiode; Schottky barrier; Chemical vapor deposition; Sputtering; Band gap; Sputter deposition; Quantum efficiency; Analytical Chemistry (journal); Chemistry; Nanotechnology","score_opus":0.005187750340943236,"score_gpt":0.15916160136615579,"score_spread":0.15397385102521255,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1542152851","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9943509,0.0009005658,0.0035274453,0.000052225583,0.000029831914,0.000012516103,0.00016837899,0.00034464683,0.0006134331],"genre_scores_gemma":[0.98883235,0.00051380845,0.008268749,0.0000786952,0.00003151931,0.00001467664,0.00014959325,0.00004311734,0.0020674919],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.999746,0.000024922454,0.000017348408,0.00007272397,0.00009516443,0.000043823235],"domain_scores_gemma":[0.99981576,0.00004734131,0.000036875917,0.00001719288,0.000052539413,0.000030331104],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00020620805,0.00044531116,0.00039483167,0.00027556927,0.00014774503,0.0004195705,0.00041893602,0.00054641836,0.00070317317],"category_scores_gemma":[0.00020567395,0.00032449028,0.00018567842,0.00028221158,0.00020537923,0.00032094723,0.0002647394,0.00027841932,0.0003377211],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000060075756,0.0000082119805,0.00049321586,0.000022508846,0.000008232165,0.00006387966,0.000013043804,0.00006215893,0.9979468,0.000023841854,0.000045088775,0.0012529655],"study_design_scores_gemma":[0.0000074994664,0.00008360951,0.002924105,0.00000189724,0.00001123389,0.0001411443,0.000008475961,0.0011411376,0.99518,0.000012342464,0.000483286,0.000005296968],"about_ca_topic_score_codex":0.00063815515,"about_ca_topic_score_gemma":0.0011180552,"teacher_disagreement_score":0.00070317317,"about_ca_system_score_codex":0.00028915232,"about_ca_system_score_gemma":0.00012010738,"threshold_uncertainty_score":0.0023524165},"labels":[],"label_agreement":null},{"id":"W1562127043","doi":"10.48550/arxiv.cond-mat/0108141","title":"Point defects in models of amorphous silicon and their role in structural relaxation","year":2001,"lang":"en","type":"preprint","venue":"arXiv (Cornell University)","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Université de Montréal","funders":"","keywords":"Amorphous solid; Crystallographic defect; Materials science; Annealing (glass); Relaxation (psychology); Silicon; Amorphous silicon; Valence (chemistry); Molecular dynamics; Condensed matter physics; Chemical physics; Molecular physics; Crystallography; Crystalline silicon; Chemistry; Physics; Computational chemistry","score_opus":0.026012305233475388,"score_gpt":0.14930479549201348,"score_spread":0.12329249025853808,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1562127043","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9370517,0.00073827495,0.0563017,0.0003754984,0.000034119617,0.000045386892,0.00027025832,0.00014642073,0.0050365743],"genre_scores_gemma":[0.9879341,0.0004902692,0.009326199,0.000048619997,0.000016056323,0.00009369131,0.00020991813,0.000054825476,0.0018262344],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9998785,0.000042260224,0.0000051674933,0.000011576441,0.000033118176,0.000029366554],"domain_scores_gemma":[0.99964213,0.00020723435,0.000035771678,0.00003234998,0.00003651877,0.000046079997],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00037533534,0.00042735922,0.00072268693,0.0006487129,0.0006274042,0.0008629321,0.001232006,0.001067253,0.0019270246],"category_scores_gemma":[0.0008675403,0.00043358415,0.0005256277,0.0006538676,0.0010171254,0.0010213169,0.00057321845,0.0007518156,0.00020750209],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000043422646,0.000035143337,0.000422957,0.00001860857,0.000016157837,0.00005927439,0.0000345216,0.9842472,0.001818576,0.012684832,0.00008363431,0.00053561036],"study_design_scores_gemma":[0.00002521995,0.000026191456,0.000114826515,0.00000290159,0.000004137831,0.000007024464,0.000012917861,0.9946995,0.00024815754,0.0046830727,0.00017135275,0.000004660032],"about_ca_topic_score_codex":0.011312015,"about_ca_topic_score_gemma":0.008243879,"teacher_disagreement_score":0.011312015,"about_ca_system_score_codex":0.00086653937,"about_ca_system_score_gemma":0.0006658181,"threshold_uncertainty_score":0.02249235},"labels":[],"label_agreement":null},{"id":"W1579548304","doi":"10.5772/18255","title":"Optoelectronic Properties of Amorphous Silicon the Role of Hydrogen: from Experiment to Modeling","year":2011,"lang":"en","type":"book-chapter","venue":"InTech eBooks","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":11,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Ontario Institute of Technology","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Amorphous silicon; Materials science; Optoelectronics; Dangling bond; Photoconductivity; Silicon; Amorphous solid; Context (archaeology); Solar cell; Crystalline silicon; Engineering physics; Chemistry; Crystallography; Physics","score_opus":0.02148837894613314,"score_gpt":0.1883932862588795,"score_spread":0.16690490731274635,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1579548304","genre_codex":"empirical","genre_gemma":"methods","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"methods","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.3875306,0.19596706,0.2443795,0.009501141,0.0006859238,0.00021662985,0.0029356694,0.00097317866,0.15781032],"genre_scores_gemma":[0.9113552,0.055764347,0.022109559,0.0004037533,0.00031654656,0.00016405345,0.0004406672,0.00008928605,0.009356518],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99989307,0.000017325692,0.00000440418,0.000026742333,0.000044650897,0.000013791291],"domain_scores_gemma":[0.9998425,0.000103124825,0.00001600961,0.000016284383,0.000017310516,0.0000048383877],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00036641676,0.0005160169,0.0004518035,0.00041635157,0.00022278246,0.00073544454,0.0010358839,0.00083046476,0.0011338195],"category_scores_gemma":[0.0005522199,0.0004040936,0.0005777279,0.00049275084,0.0011181218,0.0016144402,0.00042180246,0.0007673947,0.0002812591],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000109656125,0.00026969722,0.0026080413,0.0017797505,0.00008966463,0.0005876354,0.00038078005,0.5131987,0.06308426,0.36696246,0.0047636107,0.04616576],"study_design_scores_gemma":[0.00002886631,0.00008736312,0.0023868652,0.00017326577,0.000025093577,0.00018080388,0.00007490615,0.8476494,0.008980955,0.12765706,0.012703092,0.000052259322],"about_ca_topic_score_codex":0.0017901302,"about_ca_topic_score_gemma":0.00070262497,"teacher_disagreement_score":0.0017901302,"about_ca_system_score_codex":0.00084233127,"about_ca_system_score_gemma":0.00034397142,"threshold_uncertainty_score":0.0061115623},"labels":[],"label_agreement":null},{"id":"W1602981712","doi":"10.1109/nssmic.1994.474475","title":"Charge transport in a-Si:H detectors: comparison of analytical and Monte Carlo simulations","year":2002,"lang":"en","type":"article","venue":"","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Université de Montréal","funders":"","keywords":"Monte Carlo method; Physics; Charge (physics); Statistical physics; Electron; Exponential function; Biasing; Computational physics; Field (mathematics); Detector; Voltage; Quantum mechanics; Optics; Mathematics; Mathematical analysis","score_opus":0.02886210117624262,"score_gpt":0.23971589426431025,"score_spread":0.21085379308806762,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1602981712","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.80574536,0.0014203875,0.16797265,0.0010184956,0.00010463158,0.00013022566,0.00057012116,0.0009433687,0.022094792],"genre_scores_gemma":[0.9787732,0.00031702206,0.018369801,0.00009906155,0.000024027553,0.0000921965,0.00016335121,0.00007715481,0.0020841814],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99977905,0.00006763655,0.00001037905,0.000020718951,0.00007486048,0.000047362195],"domain_scores_gemma":[0.9975172,0.0018933582,0.00014127798,0.00009730417,0.00027068454,0.00008020336],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0010050639,0.0003331628,0.00054746494,0.00079516636,0.0004968442,0.00067599,0.00087976054,0.0011689372,0.0016540407],"category_scores_gemma":[0.0026629674,0.0003310308,0.0005044633,0.00072041596,0.0005599719,0.000855833,0.00025151583,0.00047799802,0.0001662666],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000049487397,0.000035074452,0.0004798718,0.00002795787,0.00001162221,0.000030472516,0.000027348853,0.99236757,0.00073844584,0.0044372887,0.00017367212,0.0016212472],"study_design_scores_gemma":[0.0000059425925,0.0000055923592,0.000054806984,0.000002299453,0.0000016962445,0.000003957827,0.0000036428821,0.999089,0.000305138,0.00045587323,0.0000694687,0.0000025288916],"about_ca_topic_score_codex":0.017920885,"about_ca_topic_score_gemma":0.008016751,"teacher_disagreement_score":0.017920885,"about_ca_system_score_codex":0.0017905139,"about_ca_system_score_gemma":0.0012621911,"threshold_uncertainty_score":0.035633147},"labels":[],"label_agreement":null},{"id":"W1604424377","doi":"10.1109/leos.2003.1252909","title":"Materials challenges for TFT on plastic substrates","year":2004,"lang":"en","type":"article","venue":"","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Thin-film transistor; Fabrication; Materials science; Optoelectronics; Nanotechnology; Computer science","score_opus":0.024940186145801724,"score_gpt":0.20987149434368102,"score_spread":0.18493130819787928,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1604424377","genre_codex":"empirical","genre_gemma":"methods","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"methods","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.68945104,0.108579755,0.14160483,0.015606862,0.0015658763,0.00036666446,0.0009892731,0.0011065521,0.040729187],"genre_scores_gemma":[0.7966498,0.046712387,0.13583133,0.0016898626,0.0005916509,0.0003482318,0.001073397,0.0006905908,0.016412718],"study_design_codex":"bench_or_experimental","study_design_gemma":"not_applicable","domain_scores_codex":[0.9994505,0.00007391163,0.000036784484,0.00010771075,0.0002510072,0.00007996281],"domain_scores_gemma":[0.99928683,0.00029661495,0.00010646119,0.00005590083,0.00020628143,0.000047866433],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0009800242,0.00043135678,0.0005559805,0.0002698221,0.00073920406,0.0014048604,0.0007126073,0.0008620191,0.0027298008],"category_scores_gemma":[0.0014585924,0.0003996089,0.00038112345,0.00038765548,0.00044066153,0.0018373069,0.0004265505,0.0011638786,0.0017710498],"study_design_candidate":"not_applicable","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00014756783,0.0000578358,0.0008164315,0.0012650525,0.00006362994,0.00055579055,0.00021614041,0.004724492,0.94020146,0.006124551,0.0025196427,0.0433074],"study_design_scores_gemma":[0.000017391669,0.00042905958,0.0015763079,0.0001644,0.000076136304,0.0016928419,0.00052853586,0.0038349333,0.87432855,0.0037815424,0.11352196,0.000048441307],"about_ca_topic_score_codex":0.00083787646,"about_ca_topic_score_gemma":0.0013753893,"teacher_disagreement_score":0.0027298008,"about_ca_system_score_codex":0.0005562675,"about_ca_system_score_gemma":0.00056753226,"threshold_uncertainty_score":0.009132087},"labels":[],"label_agreement":null},{"id":"W1608410628","doi":"10.1088/0953-8984/27/34/345004","title":"Dominant structural defects in amorphous silicon","year":2015,"lang":"en","type":"article","venue":"Journal of Physics Condensed Matter","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":2,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Université de Montréal; Regroupement Québécois sur les Matériaux de Pointe","funders":"Fonds de recherche du Québec – Nature et technologies; Natural Sciences and Engineering Research Council of Canada","keywords":"Amorphous solid; Relaxation (psychology); Cluster (spacecraft); Silicon; Materials science; Bond length; Molecular dynamics; Coordination number; Amorphous silicon; Chemical physics; Crystallography; Molecular geometry; Molecular physics; Molecule; Computational chemistry; Chemistry; Crystalline silicon; Crystal structure; Computer science; Ion","score_opus":0.014454979041361856,"score_gpt":0.2171913721277397,"score_spread":0.20273639308637784,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1608410628","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.994745,0.00013211535,0.0034722222,0.000055939567,0.0000042242737,0.0000076292968,0.000081219136,0.000033102122,0.0014685254],"genre_scores_gemma":[0.9986992,0.00007613746,0.00092914084,0.000006697416,0.0000016942103,0.0000064997707,0.00003617048,0.0000064682336,0.00023799799],"study_design_codex":"simulation_or_modeling","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99993956,0.000011891362,0.0000038391845,0.000013410427,0.000017313187,0.000014052532],"domain_scores_gemma":[0.99974364,0.00012108311,0.00005662574,0.000020419742,0.000024105608,0.000034173358],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00013096734,0.00022997525,0.00023355789,0.00048672745,0.00034536692,0.0005518098,0.0003614112,0.000402708,0.0006122129],"category_scores_gemma":[0.0007280296,0.00024579468,0.00031132795,0.00034288605,0.0005445074,0.00042119005,0.00026282028,0.00021834322,0.000047879308],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00007982822,0.00007525181,0.00847094,0.000051489482,0.000025340689,0.00025213996,0.000052583648,0.9636647,0.017172765,0.007871576,0.00019130719,0.0020921417],"study_design_scores_gemma":[0.00002304078,0.00007746412,0.0024487053,0.0000063590123,0.000012401885,0.00006385548,0.000037812526,0.9930555,0.0019070172,0.0021835822,0.00017698566,0.0000072999733],"about_ca_topic_score_codex":0.0076361406,"about_ca_topic_score_gemma":0.0058275186,"teacher_disagreement_score":0.0076361406,"about_ca_system_score_codex":0.0007197377,"about_ca_system_score_gemma":0.0005198838,"threshold_uncertainty_score":0.015183389},"labels":[],"label_agreement":null},{"id":"W1612057006","doi":"10.1109/pvsc.2002.1190482","title":"Thin multicrystalline silicon solar cells with silicon nitride front and rear surface passivation","year":2003,"lang":"en","type":"article","venue":"","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":2,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"","funders":"Institute of Gender and Health","keywords":"Passivation; Wafer; Materials science; Silicon nitride; Solar cell; Carrier lifetime; Optoelectronics; Silicon; Composite material; Layer (electronics)","score_opus":0.006338095258398626,"score_gpt":0.17216351059398918,"score_spread":0.16582541533559056,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1612057006","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9800181,0.0022426385,0.011910438,0.00007053703,0.00006724031,0.000040739422,0.00039261885,0.00021906971,0.0050385385],"genre_scores_gemma":[0.9532116,0.002276651,0.0374783,0.000067783105,0.000028841603,0.00006236295,0.0006657037,0.000056011508,0.0061527384],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99987066,0.0000051577586,0.000008256236,0.000020336338,0.00008264416,0.0000129820455],"domain_scores_gemma":[0.9998473,0.00003435136,0.000026521548,0.000029159377,0.00004918288,0.00001333919],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00008443396,0.0003137935,0.000553093,0.00016311406,0.00021887201,0.00038978757,0.00083283114,0.00049131986,0.0016101334],"category_scores_gemma":[0.0002884307,0.0003393995,0.0003129886,0.0003028677,0.00017559851,0.00050986727,0.0003997003,0.00045087957,0.00075312884],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000051138177,0.000021852691,0.00026822663,0.00008021568,0.000019217296,0.000094110714,0.000014476815,0.0016529496,0.99446446,0.00014163306,0.00009585639,0.0030959218],"study_design_scores_gemma":[0.00002287942,0.00022395069,0.0016089657,0.000012034115,0.000037015263,0.00028062586,0.000018950132,0.009663576,0.9861856,0.0001497752,0.0017879757,0.000008570019],"about_ca_topic_score_codex":0.0012206715,"about_ca_topic_score_gemma":0.003087532,"teacher_disagreement_score":0.0016101334,"about_ca_system_score_codex":0.00024793512,"about_ca_system_score_gemma":0.00020676188,"threshold_uncertainty_score":0.005386412},"labels":[],"label_agreement":null},{"id":"W1622778297","doi":"10.1063/1.1609633","title":"Characterization of amorphous GexSi1−xOy for micromachined uncooled bolometer applications","year":2003,"lang":"en","type":"article","venue":"Journal of Applied Physics","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":30,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Carleton University","funders":"","keywords":"Materials science; Sputtering; Bolometer; Electrical resistivity and conductivity; Germanium; Silicon; Amorphous solid; Sputter deposition; Thin film; Optoelectronics; Analytical Chemistry (journal); Temperature coefficient; Oxygen; Argon; Optics; Nanotechnology; Chemistry; Crystallography; Composite material; Electrical engineering","score_opus":0.007660276564287174,"score_gpt":0.1962126270214073,"score_spread":0.18855235045712013,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1622778297","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.993686,0.0005771999,0.0044954475,0.000029015448,0.000022587472,0.000030107223,0.00037493266,0.0001390996,0.0006455741],"genre_scores_gemma":[0.9881285,0.00046951132,0.008931505,0.000019011819,0.000008123421,0.000040978168,0.000489955,0.000057919573,0.0018545553],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99990344,0.0000073140286,0.000007904724,0.000025353076,0.000037743674,0.000018222274],"domain_scores_gemma":[0.9997559,0.00006453997,0.00005714114,0.000049726634,0.000052493448,0.000020284477],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00014462843,0.00024778012,0.00026375585,0.00025691456,0.00014376838,0.0003691338,0.0004234843,0.00020869398,0.0011972854],"category_scores_gemma":[0.0004273639,0.00017081203,0.00013524685,0.00024190164,0.0001414433,0.00023336803,0.00014846612,0.00022884418,0.00028417638],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000023537697,0.000004002158,0.0002513421,0.000029777513,0.0000034273858,0.00005486846,0.000025061721,0.00007950559,0.998738,0.00004202816,0.000026148318,0.00072224997],"study_design_scores_gemma":[0.000008649453,0.00016267876,0.005873711,0.000007445693,0.000014426709,0.00013744844,0.00003984915,0.0011359283,0.99051416,0.000026648137,0.0020735727,0.0000054319257],"about_ca_topic_score_codex":0.0005227918,"about_ca_topic_score_gemma":0.0012146767,"teacher_disagreement_score":0.0011972854,"about_ca_system_score_codex":0.00017936953,"about_ca_system_score_gemma":0.0001331695,"threshold_uncertainty_score":0.004005313},"labels":[],"label_agreement":null},{"id":"W1625345756","doi":"10.1557/proc-762-a16.3","title":"Field-Assisted Germanium Induced Crystallization of Amorphous Silicon","year":2003,"lang":"en","type":"article","venue":"MRS Proceedings","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Acadia University","funders":"","keywords":"Materials science; Crystallization; Germanium; Crystallinity; Anode; Annealing (glass); Silicon; Amorphous silicon; Crystallite; Polycrystalline silicon; Amorphous solid; Cathode; Nanocrystalline silicon; Crystalline silicon; Optoelectronics; Chemical engineering; Nanotechnology; Composite material; Metallurgy; Crystallography; Electrical engineering; Thin-film transistor; Electrode","score_opus":0.012707913643273968,"score_gpt":0.2030065518453332,"score_spread":0.19029863820205922,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1625345756","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99379855,0.0005516089,0.0011060105,0.00013624922,0.000059126956,0.000013903689,0.000106408115,0.000061021303,0.0041670594],"genre_scores_gemma":[0.99797267,0.000175562,0.00045813312,0.000017963033,0.0000062498316,0.00000443725,0.00004707031,0.000016107319,0.001301789],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99995327,0.000003823449,0.0000022650354,0.000010897177,0.000012196172,0.0000175802],"domain_scores_gemma":[0.9999496,0.000020378733,0.00000917147,0.000008122157,0.000006475548,0.0000062630957],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0000852532,0.0001916342,0.0002564173,0.00017008327,0.0002858023,0.0003868199,0.00022197187,0.0001948057,0.0011968121],"category_scores_gemma":[0.00016105533,0.00015626312,0.00013632461,0.00017978459,0.00029378792,0.0002935578,0.00032575836,0.00030708013,0.00016432861],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00017126894,0.000021054479,0.0002044487,0.00010498406,0.000009839749,0.00016478881,0.00016894491,0.0005884794,0.9944699,0.0017947915,0.00035699716,0.0019445533],"study_design_scores_gemma":[0.000039059196,0.00008699288,0.0007836989,0.000005688879,0.0000040159207,0.000062810046,0.000054000117,0.002121454,0.9949189,0.00020248354,0.0017118573,0.000009087976],"about_ca_topic_score_codex":0.001348262,"about_ca_topic_score_gemma":0.002817097,"teacher_disagreement_score":0.001348262,"about_ca_system_score_codex":0.00049798284,"about_ca_system_score_gemma":0.00032395832,"threshold_uncertainty_score":0.0040037036},"labels":[],"label_agreement":null},{"id":"W1632245719","doi":"10.1063/1.4926495","title":"Electrical dependence on the chemical composition of the gate dielectric in indium gallium zinc oxide thin-film transistors","year":2015,"lang":"en","type":"article","venue":"Applied Physics Letters","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":15,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Materials science; Plasma-enhanced chemical vapor deposition; Gate dielectric; Dielectric; Thin-film transistor; Optoelectronics; Chemical vapor deposition; Thin film; X-ray photoelectron spectroscopy; Analytical Chemistry (journal); Layer (electronics); Nanotechnology; Transistor; Chemical engineering; Chemistry; Electrical engineering","score_opus":0.011366787041720897,"score_gpt":0.18573944187686925,"score_spread":0.17437265483514836,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1632245719","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9978397,0.00041554053,0.0008694073,0.000046275818,0.000012285386,0.000008183371,0.00012338688,0.000041795876,0.0006434431],"genre_scores_gemma":[0.998324,0.00037612495,0.0007696419,0.00001917723,0.0000041202443,0.0000059560834,0.00009343906,0.000012655929,0.00039490193],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999113,0.00000832694,0.000006818336,0.000016329423,0.00003430802,0.00002296337],"domain_scores_gemma":[0.9997924,0.000086028245,0.000041014096,0.000015779473,0.000038457445,0.000026262991],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000107638516,0.00021885072,0.00014303805,0.00016620987,0.00014065276,0.00046914953,0.00030155416,0.00021558549,0.00057842326],"category_scores_gemma":[0.00041943556,0.0002451123,0.00009247314,0.0001914012,0.00022948373,0.0001988029,0.00009824347,0.00026954955,0.0001336803],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000043691805,0.0000059246595,0.00042140455,0.000020471944,0.0000039038873,0.00004747058,0.000014008718,0.0001107445,0.9988231,0.000032098153,0.000009051844,0.00046810738],"study_design_scores_gemma":[0.000006583684,0.000050296087,0.004242203,0.000003724712,0.0000122858255,0.00006162846,0.000020582462,0.0009305026,0.99442685,0.000021692482,0.00022117957,0.0000023455648],"about_ca_topic_score_codex":0.0008886694,"about_ca_topic_score_gemma":0.001936375,"teacher_disagreement_score":0.0008886694,"about_ca_system_score_codex":0.0002177258,"about_ca_system_score_gemma":0.00014121611,"threshold_uncertainty_score":0.0019350648},"labels":[],"label_agreement":null},{"id":"W1635540212","doi":"10.1116/1.1752898","title":"Study of the optical properties of SiOxNy thin films by effective medium theories","year":2004,"lang":"en","type":"article","venue":"Journal of Vacuum Science & Technology A Vacuum Surfaces and Films","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":16,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McMaster University","funders":"","keywords":"Elastic recoil detection; Silicon oxynitride; Ellipsometry; Materials science; Silicon nitride; Thin film; Silicon; Fourier transform infrared spectroscopy; Plasma-enhanced chemical vapor deposition; Analytical Chemistry (journal); Refractive index; Nuclear reaction analysis; Spectroscopy; Hydrogen; Optics; Chemistry; Optoelectronics; Nanotechnology; Physics","score_opus":0.0064138090765130775,"score_gpt":0.20913850536161763,"score_spread":0.20272469628510456,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1635540212","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.8915729,0.0020961002,0.09445251,0.00015109585,0.000050865532,0.00005905087,0.00012610584,0.00015170805,0.011339654],"genre_scores_gemma":[0.98098654,0.0011258724,0.015913,0.000017584896,0.00001810067,0.000049750677,0.00010076401,0.000030428544,0.0017578307],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998957,0.00001683633,0.00000405368,0.000013067133,0.00005809994,0.000012326489],"domain_scores_gemma":[0.99958366,0.00028020912,0.0000529655,0.000027006068,0.000047712634,0.000008502935],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0005239924,0.0006641627,0.00026342736,0.00050552713,0.00019461263,0.00035558332,0.0005931731,0.00031851628,0.0012146154],"category_scores_gemma":[0.0009796415,0.00025495465,0.00029658756,0.00023985008,0.00043100858,0.0006793617,0.00017573468,0.0004068113,0.00014177387],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00014679166,0.00011782429,0.0020174964,0.0003570041,0.000079538746,0.00059208064,0.00020180833,0.06966802,0.8600978,0.056548186,0.00040284623,0.009770567],"study_design_scores_gemma":[0.00004840547,0.00018116574,0.0033085577,0.00003659179,0.000028667944,0.00031078147,0.00006352314,0.75482756,0.23222165,0.0074564074,0.001484455,0.00003221036],"about_ca_topic_score_codex":0.000561384,"about_ca_topic_score_gemma":0.0004362699,"teacher_disagreement_score":0.0012146154,"about_ca_system_score_codex":0.00050868356,"about_ca_system_score_gemma":0.00022297353,"threshold_uncertainty_score":0.0040633082},"labels":[],"label_agreement":null},{"id":"W1661015738","doi":"10.1007/978-3-319-48933-9_9","title":"Charge Transport in Disordered Materials","year":2017,"lang":"en","type":"book-chapter","venue":"Springer handbooks","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":21,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McMaster University","funders":"","keywords":"Charge (physics); Materials science; Condensed matter physics; Engineering physics; Chemical physics; Physics; Quantum mechanics","score_opus":0.015567947487946179,"score_gpt":0.19656857623455132,"score_spread":0.18100062874660514,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1661015738","genre_codex":"other","genre_gemma":"review","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"review","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.013067085,0.18406726,0.06303731,0.003904176,0.009395223,0.00010441471,0.0007383122,0.001326296,0.72436005],"genre_scores_gemma":[0.0683276,0.10619668,0.023438023,0.0010414117,0.0018832665,0.000194108,0.0012973223,0.00065420236,0.7969673],"study_design_codex":"theoretical_or_conceptual","study_design_gemma":"not_applicable","domain_scores_codex":[0.9999124,0.0000074367526,0.000003684431,0.000014536065,0.00005030464,0.000011660223],"domain_scores_gemma":[0.9999492,0.000019196328,0.0000022618833,0.0000088353945,0.000015102819,0.0000052873897],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00009874944,0.0006750263,0.0007221193,0.0007084575,0.0005627769,0.0014648834,0.0008158949,0.0007252787,0.021106701],"category_scores_gemma":[0.00025223434,0.0003495419,0.0002782829,0.00090822746,0.0006448618,0.0018465345,0.0008743023,0.0012622715,0.008182092],"study_design_candidate":"not_applicable","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00005171373,0.00006804562,0.00006432264,0.0016419903,0.000021760845,0.00020504893,0.00023061494,0.002483815,0.026783578,0.5605636,0.15613031,0.2517552],"study_design_scores_gemma":[0.000013313142,0.000041471598,0.00016941829,0.00035273406,0.000014963813,0.00040487736,0.00008954892,0.006126157,0.011709817,0.2488378,0.7322132,0.000026619517],"about_ca_topic_score_codex":0.00045954413,"about_ca_topic_score_gemma":0.0007899247,"teacher_disagreement_score":0.021106701,"about_ca_system_score_codex":0.0007349552,"about_ca_system_score_gemma":0.0005235441,"threshold_uncertainty_score":0.070608914},"labels":[],"label_agreement":null},{"id":"W1713446010","doi":"10.1139/cjp-2013-0618","title":"Electronic properties of undoped microcrystalline silicon oxide films","year":2014,"lang":"en","type":"article","venue":"Canadian Journal of Physics","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":false,"route_ca_venue":true,"route_about_ca":false,"ca_institutions":"","funders":"China Scholarship Council","keywords":"Photoconductivity; Band gap; Photocurrent; Microcrystalline; Amorphous solid; Materials science; Amorphous silicon; Optoelectronics; Photon energy; Absorption (acoustics); Analytical Chemistry (journal); Silicon; Optics; Physics; Chemistry; Crystalline silicon; Photon; Crystallography","score_opus":0.008184294674983198,"score_gpt":0.1604767018769752,"score_spread":0.152292407201992,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1713446010","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9988343,0.00038813637,0.000114478236,0.000013959703,0.0000049282207,0.0000021253418,0.00016567198,0.000009515425,0.00046682515],"genre_scores_gemma":[0.9983773,0.00030789681,0.00032824714,0.000010209311,0.0000036693493,0.000004438677,0.00027294384,0.0000068540703,0.00068834727],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999349,0.0000022214074,0.0000041646267,0.000017523704,0.000027414571,0.000013774623],"domain_scores_gemma":[0.99986005,0.000044251075,0.00002866871,0.000011545015,0.000041321306,0.000014071287],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000053550997,0.00013104366,0.00015247306,0.00025137173,0.00012965976,0.00021408056,0.00019831538,0.00013735713,0.0011471616],"category_scores_gemma":[0.00027646008,0.00010210708,0.0000853859,0.00025327926,0.00012353467,0.00013231044,0.00009080188,0.00013524015,0.000098004595],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00008664369,0.000010887414,0.0018742455,0.00007053399,0.000013817204,0.00009706539,0.00003109849,0.00022533347,0.9954196,0.000046075576,0.00006719062,0.002057551],"study_design_scores_gemma":[0.000012407277,0.00039220767,0.03816407,0.000017383763,0.000060819377,0.00028228408,0.000100372075,0.002503046,0.95690453,0.000035735287,0.0015180352,0.00000910788],"about_ca_topic_score_codex":0.0025104366,"about_ca_topic_score_gemma":0.0038332082,"teacher_disagreement_score":0.0025104366,"about_ca_system_score_codex":0.00030347006,"about_ca_system_score_gemma":0.00014913568,"threshold_uncertainty_score":0.0049916506},"labels":[],"label_agreement":null},{"id":"W1754742353","doi":"10.1139/cjp-2013-0621","title":"Improved light trapping effect for thin-film silicon solar cells fabricated on double-textured white glass substrate","year":2014,"lang":"en","type":"article","venue":"Canadian Journal of Physics","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":11,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":false,"route_ca_venue":true,"route_about_ca":false,"ca_institutions":"","funders":"","keywords":"Substrate (aquarium); Silicon; Optoelectronics; Thin film; Materials science; Solar cell; Etching (microfabrication); Plasmonic solar cell; Texture (cosmology); Optics; Layer (electronics); Nanotechnology; Physics; Monocrystalline silicon","score_opus":0.008352862598072889,"score_gpt":0.18783574676038167,"score_spread":0.1794828841623088,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1754742353","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99812084,0.0003273929,0.00091527036,0.00002240931,0.000024529072,0.0000032764215,0.000044754317,0.00004004561,0.0005015163],"genre_scores_gemma":[0.9976433,0.000290348,0.0013527235,0.000009354108,0.0000072434073,0.0000029101718,0.000049805596,0.000008409986,0.00063588313],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99995184,0.000002276093,0.0000029187509,0.000013762933,0.00001730914,0.000011956828],"domain_scores_gemma":[0.9999254,0.000020498699,0.00001166895,0.000007656912,0.000020750897,0.000014014939],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000048483413,0.00022692865,0.00019336467,0.00013389961,0.00012396621,0.000260529,0.0002239519,0.00019752016,0.0006789235],"category_scores_gemma":[0.00011795429,0.0001315989,0.00016956849,0.00014240442,0.00012202487,0.000203662,0.00011044466,0.00021942052,0.000114188995],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000025672745,0.000005669028,0.00014890012,0.000019434661,0.0000032696244,0.00005254484,0.000014346984,0.00007100333,0.99865353,0.00003064589,0.000030521434,0.00094438135],"study_design_scores_gemma":[0.000010533628,0.00011687734,0.0014941201,0.0000022877055,0.0000128469665,0.00007048602,0.000022568101,0.0020162717,0.99593204,0.000009161939,0.00030804917,0.0000047391286],"about_ca_topic_score_codex":0.0018598416,"about_ca_topic_score_gemma":0.0037734646,"teacher_disagreement_score":0.0018598416,"about_ca_system_score_codex":0.00016742255,"about_ca_system_score_gemma":0.0001290279,"threshold_uncertainty_score":0.003698051},"labels":[],"label_agreement":null},{"id":"W1767040288","doi":"10.1139/cjp-2013-0538","title":"Preparation condition and recombination rates at radiative defects in a-Si:H","year":2014,"lang":"en","type":"article","venue":"Canadian Journal of Physics","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":false,"route_ca_venue":true,"route_about_ca":false,"ca_institutions":"","funders":"","keywords":"Recombination; Physics; Radiative transfer; Spontaneous emission; Photoluminescence; Atomic physics; Amorphous silicon; Silicon; Excitation; Thermal; Electron; Amorphous solid; Coupling (piping); Phonon; Molecular physics; Condensed matter physics; Optics; Materials science; Optoelectronics; Thermodynamics; Crystalline silicon; Chemistry; Nuclear physics; Quantum mechanics","score_opus":0.00726891729822454,"score_gpt":0.21077916459810925,"score_spread":0.2035102472998847,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1767040288","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9982066,0.0004676762,0.0005584477,0.000027191167,0.000010775921,0.000016224376,0.000200855,0.000022802118,0.0004893181],"genre_scores_gemma":[0.9976687,0.00033628565,0.0010304919,0.000013842321,0.0000066952352,0.000020822434,0.00034837596,0.000030835905,0.00054404634],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9997924,0.000039493534,0.000021871263,0.00006903143,0.000037474263,0.000039684044],"domain_scores_gemma":[0.9994998,0.00021739207,0.00011224897,0.000055785342,0.00008004298,0.000034697616],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00039224516,0.00028366313,0.00019408579,0.0002987062,0.00029347802,0.0004432178,0.00027538594,0.0003814766,0.0014203049],"category_scores_gemma":[0.0008545667,0.00023547727,0.00017434722,0.00029677767,0.000261277,0.00041364605,0.00013773511,0.00043310312,0.00031803138],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00018410268,0.000018516665,0.0005578997,0.0000496499,0.000009794517,0.000050560837,0.000051391886,0.00011027683,0.99813807,0.0000355271,0.000032384247,0.00076187955],"study_design_scores_gemma":[0.000015908545,0.00023806185,0.0034129356,0.0000053514386,0.00001435238,0.00005454924,0.0000387146,0.00038071122,0.9953754,0.000010996547,0.00044718472,0.000005813937],"about_ca_topic_score_codex":0.00070079224,"about_ca_topic_score_gemma":0.00094431033,"teacher_disagreement_score":0.0014203049,"about_ca_system_score_codex":0.00019497816,"about_ca_system_score_gemma":0.00018801494,"threshold_uncertainty_score":0.004751444},"labels":[],"label_agreement":null},{"id":"W1796182996","doi":"10.1139/cjp-2013-0682","title":"Optimization of a-Si<sub>1–<i>x</i></sub>Ge<sub><i>x</i></sub>:H single-junction and a-Si:H/a-Si<sub>1–<i>x</i></sub>Ge<sub><i>x</i></sub>:H tandem solar cells with enhanced optical management","year":2014,"lang":"en","type":"article","venue":"Canadian Journal of Physics","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":4,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":false,"route_ca_venue":true,"route_about_ca":false,"ca_institutions":"","funders":"National Science Council","keywords":"Quantum efficiency; Band gap; Tandem; Optoelectronics; Silicon; Physics; Absorption (acoustics); Optics; Materials science","score_opus":0.005992150144537523,"score_gpt":0.1563516876977926,"score_spread":0.15035953755325507,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1796182996","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99517894,0.00059787766,0.0025645457,0.000040194904,0.000012341757,0.00002035755,0.000102168306,0.000050964907,0.0014326153],"genre_scores_gemma":[0.9946932,0.0003348472,0.0039280006,0.000019740663,0.0000032545158,0.00002697408,0.00011518916,0.000016398675,0.0008623601],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99991834,0.0000044450535,0.000005990161,0.000024276655,0.000031946507,0.000014965231],"domain_scores_gemma":[0.9999598,0.000005618669,0.000013550338,0.0000036051194,0.00001132212,0.0000060882912],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00010433166,0.00030747618,0.00027602655,0.00012056707,0.00018362378,0.00047048926,0.00040222786,0.00034155854,0.0006203673],"category_scores_gemma":[0.00009747409,0.00019184225,0.00026023184,0.00018478898,0.00011603193,0.00034389045,0.0002022914,0.0002644652,0.00020861579],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000025610341,0.000024263643,0.00047018475,0.00004530323,0.000011001559,0.000034090095,0.000012437033,0.0015411789,0.99609214,0.000077751916,0.000048858037,0.0016171052],"study_design_scores_gemma":[0.000010972952,0.00019089784,0.0034377542,0.0000035581043,0.000027457074,0.0000618504,0.00005330145,0.011896065,0.9832946,0.000044102188,0.00097167236,0.0000077348805],"about_ca_topic_score_codex":0.00081816904,"about_ca_topic_score_gemma":0.002374284,"teacher_disagreement_score":0.00081816904,"about_ca_system_score_codex":0.00036714357,"about_ca_system_score_gemma":0.000231474,"threshold_uncertainty_score":0.0026638508},"labels":[],"label_agreement":null},{"id":"W1803139198","doi":"10.1139/cjp-2013-0617","title":"Bifacial microcrystalline silicon solar cells with improved performance due to μc-SiO<sub><i>x</i></sub>:H doped layers","year":2014,"lang":"en","type":"article","venue":"Canadian Journal of Physics","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":7,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":false,"route_ca_venue":true,"route_about_ca":false,"ca_institutions":"","funders":"","keywords":"Microcrystalline; Silicon; Optoelectronics; Doping; Solar cell; Physics; Optics; Concentrator; Reflection (computer programming); Energy conversion efficiency; Plasmonic solar cell; Band gap; Monocrystalline silicon; Crystallography; Chemistry","score_opus":0.004221689454924647,"score_gpt":0.15052861934673029,"score_spread":0.14630692989180563,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1803139198","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.995742,0.0008295218,0.001861177,0.000042594802,0.000015266205,0.0000052888063,0.000112266884,0.000117098796,0.0012746935],"genre_scores_gemma":[0.99529463,0.00044914387,0.0031763155,0.000016516324,0.0000067531855,0.000004855572,0.00012318455,0.00001193797,0.0009166966],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99996126,0.0000018778849,0.0000018406872,0.000007755446,0.00001817986,0.000009132834],"domain_scores_gemma":[0.99996185,0.000007316611,0.0000071100717,0.0000040620985,0.0000122420515,0.0000073318524],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00004158611,0.00018525365,0.00015485754,0.00009306354,0.00010097065,0.00019457181,0.00020550498,0.00015897935,0.0007542123],"category_scores_gemma":[0.00009097782,0.00008905664,0.000088325076,0.00018795561,0.00012831004,0.0001844364,0.00012693115,0.00020185826,0.00015751194],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000024767198,0.0000066243833,0.0002796815,0.000021273017,0.0000031657055,0.0000368237,0.000007822049,0.0002069147,0.9961831,0.000055542354,0.000086323176,0.003087797],"study_design_scores_gemma":[0.000008822422,0.000158952,0.004200373,0.0000029933506,0.000014135617,0.00019301419,0.000016043223,0.0031470787,0.99107176,0.00004183829,0.0011411494,0.000003774269],"about_ca_topic_score_codex":0.0008385858,"about_ca_topic_score_gemma":0.0024313186,"teacher_disagreement_score":0.0008385858,"about_ca_system_score_codex":0.0001883783,"about_ca_system_score_gemma":0.000094410025,"threshold_uncertainty_score":0.0025230646},"labels":[],"label_agreement":null},{"id":"W1805716770","doi":"10.1109/ccece.2001.933749","title":"Stability issues in digital circuits in amorphous silicon technology","year":2002,"lang":"en","type":"article","venue":"","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":12,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Thin-film transistor; Multiplexer; Materials science; Optoelectronics; Electronic circuit; Liquid-crystal display; Transistor; Amorphous silicon; Biasing; Threshold voltage; Logic gate; Amorphous solid; Digital electronics; Silicon; Electronic engineering; Electrical engineering; Voltage; Multiplexing; Nanotechnology; Crystalline silicon; Engineering","score_opus":0.015500456844077503,"score_gpt":0.19555926276778876,"score_spread":0.18005880592371126,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1805716770","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.77503735,0.01757516,0.18146726,0.0015205384,0.00023609262,0.000074803844,0.00019256532,0.0010477881,0.02284856],"genre_scores_gemma":[0.98224753,0.0015128858,0.011726335,0.00009084779,0.00008653649,0.000022104854,0.00006161455,0.00004252176,0.0042095943],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9996556,0.000056729878,0.000020326244,0.000061152714,0.00017604887,0.000030109333],"domain_scores_gemma":[0.9990853,0.00044540668,0.000106655854,0.00013362583,0.00020615173,0.000022759856],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0003739788,0.00017978287,0.00018302108,0.0003514071,0.00041135977,0.00082780264,0.00030636165,0.00054774416,0.0022734066],"category_scores_gemma":[0.0018625683,0.0001770984,0.00015113961,0.0003366383,0.00042533706,0.001047222,0.00026514308,0.0003855222,0.00043445427],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0003547271,0.00007553454,0.0047272504,0.0004267193,0.000066457535,0.0010076409,0.0010697447,0.021479487,0.77868766,0.055061076,0.0018504607,0.1351933],"study_design_scores_gemma":[0.000054866927,0.0010521096,0.006868427,0.00010981002,0.00010928629,0.0020826338,0.00039431243,0.14681311,0.76230067,0.04143614,0.038723063,0.000055522516],"about_ca_topic_score_codex":0.0005204808,"about_ca_topic_score_gemma":0.0005026478,"teacher_disagreement_score":0.0022734066,"about_ca_system_score_codex":0.0005811636,"about_ca_system_score_gemma":0.00021568767,"threshold_uncertainty_score":0.0076053143},"labels":[],"label_agreement":null},{"id":"W1816400618","doi":"10.1149/ma2006-02/33/1562","title":"Stable Bottom-Gate Nanocrystalline/Amorphous Silicon TFTs for OLED Displays","year":2006,"lang":"en","type":"article","venue":"ECS Meeting Abstracts","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Materials science; Nanocrystalline material; Optoelectronics; Thin-film transistor; Amorphous solid; Nanocrystalline silicon; Silicon; Amorphous silicon; OLED; Engineering physics; Nanotechnology; Crystallography; Crystalline silicon; Engineering; Chemistry","score_opus":0.008722107295842045,"score_gpt":0.20027619411439215,"score_spread":0.1915540868185501,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1816400618","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.95280385,0.00725977,0.020777626,0.00078943395,0.0006636349,0.000089175075,0.0035187283,0.0009828826,0.013114865],"genre_scores_gemma":[0.98760706,0.0011372875,0.0037062308,0.00007144086,0.00004051229,0.00001967029,0.00070759543,0.00006927191,0.006640984],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999516,0.0000020747432,0.0000027222977,0.000010722414,0.000019963718,0.000013010153],"domain_scores_gemma":[0.9999368,0.0000127619505,0.000008204944,0.000009714087,0.000022801923,0.0000097194625],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00007954122,0.00015539878,0.0001640432,0.000090200534,0.00019326014,0.000343837,0.00026538662,0.00022365338,0.0037610715],"category_scores_gemma":[0.00018304045,0.00007104636,0.00008720329,0.000101032194,0.00009561602,0.0003511794,0.00009453578,0.00020388718,0.00087152387],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00011156382,0.0000059874196,0.00012879059,0.000048313883,0.0000037000236,0.000043914297,0.000011700773,0.00010094429,0.9937012,0.00021132868,0.0010933115,0.004539327],"study_design_scores_gemma":[0.000013495764,0.000063829444,0.00069625117,0.0000067603874,0.000011253518,0.000055872275,0.000015958061,0.0016852412,0.99317235,0.00010596377,0.004169217,0.0000037122875],"about_ca_topic_score_codex":0.0015279257,"about_ca_topic_score_gemma":0.0047880863,"teacher_disagreement_score":0.0037610715,"about_ca_system_score_codex":0.00035408308,"about_ca_system_score_gemma":0.0001626801,"threshold_uncertainty_score":0.012582064},"labels":[],"label_agreement":null},{"id":"W1819267489","doi":"10.1139/cjp-2013-0573","title":"Atmospheric aging and light-induced degradation of amorphous and nanostructured silicon using photoconductivity and electron spin resonance","year":2014,"lang":"en","type":"article","venue":"Canadian Journal of Physics","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":4,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":false,"route_ca_venue":true,"route_about_ca":false,"ca_institutions":"","funders":"","keywords":"Crystallinity; Photoconductivity; Electron paramagnetic resonance; Dangling bond; Amorphous solid; Silicon; Materials science; Microcrystalline silicon; Analytical Chemistry (journal); Amorphous silicon; Microcrystalline; Optoelectronics; Nuclear magnetic resonance; Crystallography; Chemistry; Crystalline silicon; Physics; Composite material","score_opus":0.009596383964322023,"score_gpt":0.20293814164560667,"score_spread":0.19334175768128464,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1819267489","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99758565,0.00051005674,0.0013743775,0.000011816397,0.00000698278,0.0000067715837,0.0001040014,0.000017721433,0.00038262847],"genre_scores_gemma":[0.99787927,0.00031712226,0.0011351102,0.000010827768,0.0000033392403,0.0000076412,0.000101449754,0.000006158995,0.00053906674],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998895,0.000008245249,0.000006685476,0.000036682526,0.000042968502,0.000015988771],"domain_scores_gemma":[0.9998754,0.00003176535,0.00003456109,0.000012912393,0.000035442754,0.0000098640285],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0001329974,0.00019809882,0.00011496187,0.00020304136,0.00010663406,0.00015992932,0.00014965264,0.0001571528,0.00046049154],"category_scores_gemma":[0.00019216226,0.00013397176,0.00015124716,0.00014824784,0.00020199863,0.00014644692,0.0001330578,0.0002112177,0.000067987814],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00001633559,0.0000033957297,0.0006919742,0.000014740815,0.0000035080286,0.000019266707,0.000025025376,0.000040008403,0.9984363,0.000012257168,0.00000797869,0.0007292944],"study_design_scores_gemma":[0.0000022245013,0.00009883193,0.015155596,0.0000023897776,0.00001126779,0.00008051448,0.000039200087,0.00090489135,0.98334795,0.000022578508,0.00033027356,0.0000043456616],"about_ca_topic_score_codex":0.0012929327,"about_ca_topic_score_gemma":0.002137249,"teacher_disagreement_score":0.0012929327,"about_ca_system_score_codex":0.00021460456,"about_ca_system_score_gemma":0.00008656392,"threshold_uncertainty_score":0.002570808},"labels":[],"label_agreement":null},{"id":"W182645286","doi":"10.1023/a:1023995005560","title":"Confined epitaxial growth by low-pressure chemical vapor deposition","year":2003,"lang":"en","type":"article","venue":"Journal of Materials Science Materials in Electronics","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Faceting; Epitaxy; Chemical vapor deposition; Wafer; Materials science; Growth rate; Deposition (geology); Selectivity; Optoelectronics; Chemical engineering; Nanotechnology; Chemistry; Mineralogy; Crystallography; Catalysis; Geology; Engineering; Organic chemistry","score_opus":0.0036059579381419794,"score_gpt":0.1941607848962014,"score_spread":0.19055482695805942,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W182645286","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.97286564,0.002357235,0.015125597,0.0002276766,0.0001305472,0.00009792715,0.0004905551,0.0005050744,0.008199771],"genre_scores_gemma":[0.9797625,0.0009977072,0.010656825,0.000066554516,0.000052854713,0.00010801299,0.0003678358,0.00008953156,0.007898176],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998369,0.000006720064,0.000007757573,0.000032693446,0.0000908348,0.000025113499],"domain_scores_gemma":[0.99984884,0.000046341807,0.000033996796,0.000025421079,0.000028540831,0.0000168946],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00012319812,0.00027646535,0.0005201173,0.00022796265,0.00039970054,0.00058616116,0.00079806725,0.0003682379,0.001537674],"category_scores_gemma":[0.00025006133,0.0004097465,0.000104623265,0.00021158879,0.000391215,0.00068369164,0.000555279,0.00050207967,0.00051334617],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000028829962,0.000023138587,0.00009158657,0.00008765728,0.00000391339,0.0000571994,0.000036979203,0.00019565392,0.9968232,0.0006495377,0.00022677169,0.0017755706],"study_design_scores_gemma":[0.000039204213,0.00008509405,0.0008923412,0.000007990488,0.0000052540163,0.00015128753,0.000015513488,0.004700571,0.98840463,0.00011575317,0.0055677607,0.000014478194],"about_ca_topic_score_codex":0.0018691951,"about_ca_topic_score_gemma":0.0063428096,"teacher_disagreement_score":0.0018691951,"about_ca_system_score_codex":0.0005243834,"about_ca_system_score_gemma":0.00039487306,"threshold_uncertainty_score":0.0051440597},"labels":[],"label_agreement":null},{"id":"W1830823100","doi":"10.1139/cjp-2013-0638","title":"Reversible and irreversible effects after oxygen exposure in thick (&gt;1 μm) silicon films deposited by VHF-PECVD on glass substrates investigated by dual beam photoconductivity","year":2013,"lang":"en","type":"article","venue":"Canadian Journal of Physics","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":3,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":false,"route_ca_venue":true,"route_about_ca":false,"ca_institutions":"","funders":"","keywords":"Photoconductivity; Amorphous silicon; Plasma-enhanced chemical vapor deposition; Amorphous solid; Analytical Chemistry (journal); Metastability; Materials science; Silicon; Oxygen; Conductivity; Band gap; Chemical vapor deposition; Optoelectronics; Crystalline silicon; Physics; Chemistry; Crystallography","score_opus":0.006487274420664532,"score_gpt":0.1692548304580276,"score_spread":0.1627675560373631,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1830823100","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99842525,0.00044292273,0.000539892,0.000015221804,0.00000668567,0.000006185894,0.00010037409,0.000021278505,0.0004422664],"genre_scores_gemma":[0.9987936,0.00019398563,0.00030209022,0.000011201429,0.0000028983377,0.000008285094,0.0001213916,0.0000109676475,0.0005555164],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998542,0.000008813214,0.000008500281,0.00004478418,0.000048414513,0.00003535197],"domain_scores_gemma":[0.9997843,0.00006576295,0.00005473644,0.000027869137,0.00004652413,0.00002092482],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000105730905,0.00024380238,0.00020222718,0.00017476783,0.00019310671,0.00032000465,0.00027097992,0.00031747975,0.0011920962],"category_scores_gemma":[0.00029627018,0.00020232977,0.00018001444,0.00015771046,0.00030806303,0.00032722598,0.00021682875,0.00042630255,0.00013074599],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00007158482,0.0000062466725,0.00071237975,0.000030261126,0.0000092443615,0.0000999602,0.00006284756,0.000055393433,0.9978021,0.000028265822,0.000013311778,0.0011083861],"study_design_scores_gemma":[0.0000042365064,0.00011748085,0.011251176,0.000004030846,0.000015145663,0.00010264751,0.000059475395,0.00035934968,0.9878043,0.000021143862,0.0002567092,0.000004249925],"about_ca_topic_score_codex":0.0010672016,"about_ca_topic_score_gemma":0.0013727053,"teacher_disagreement_score":0.0011920962,"about_ca_system_score_codex":0.00027071135,"about_ca_system_score_gemma":0.00011291802,"threshold_uncertainty_score":0.003987968},"labels":[],"label_agreement":null},{"id":"W1832795646","doi":"10.1557/proc-862-a17.5","title":"High Electron Mobility (˜150 cm<sup>2</sup>/Vs) PECVD Nanocrystalline Silicon Top-Gate TFTs at 260 °C","year":2005,"lang":"en","type":"article","venue":"MRS Proceedings","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":3,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Materials science; Plasma-enhanced chemical vapor deposition; Thin-film transistor; Analytical Chemistry (journal); Nanocrystalline silicon; Amorphous solid; Threshold voltage; Gate dielectric; Electron mobility; Amorphous silicon; Silicon; Chemical vapor deposition; Raman spectroscopy; Optoelectronics; Nanotechnology; Layer (electronics); Transistor; Crystalline silicon; Crystallography; Electrical engineering; Voltage; Optics","score_opus":0.0056404375063551756,"score_gpt":0.19202557763677658,"score_spread":0.1863851401304214,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1832795646","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99214196,0.0006697114,0.002137333,0.00014598775,0.00006811435,0.000008157428,0.0009875864,0.00017065437,0.0036704452],"genre_scores_gemma":[0.99396086,0.00023658051,0.0015909916,0.000032253916,0.000012039105,0.000008161175,0.00046893585,0.000039772018,0.0036504746],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998938,0.000002881692,0.0000043346786,0.00003100002,0.00003429868,0.000033682758],"domain_scores_gemma":[0.9998555,0.00004108065,0.00001480364,0.000018143282,0.00006008072,0.000010428572],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00008696413,0.00016298285,0.00030586464,0.00009330239,0.00024487052,0.00022441724,0.0003340874,0.00027222285,0.002603688],"category_scores_gemma":[0.00030431518,0.00008183898,0.00008850449,0.00018118575,0.000147628,0.0004011786,0.00008815535,0.00023566955,0.0006372611],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00014894242,0.000008601956,0.00055019604,0.00004537343,0.000008975525,0.00018892782,0.00007544169,0.00012804556,0.99605185,0.00012634069,0.00060493406,0.0020623824],"study_design_scores_gemma":[0.0000069656367,0.00006196645,0.0032814501,0.000004944032,0.000008942604,0.00013405563,0.000056141347,0.0009924239,0.9939452,0.000042919713,0.0014610498,0.0000040154046],"about_ca_topic_score_codex":0.004278527,"about_ca_topic_score_gemma":0.0080187125,"teacher_disagreement_score":0.004278527,"about_ca_system_score_codex":0.00044756092,"about_ca_system_score_gemma":0.0001499193,"threshold_uncertainty_score":0.008710206},"labels":[],"label_agreement":null},{"id":"W1837244333","doi":"10.1139/cjp-2013-0604","title":"Monitoring of powder formation via optical emission spectroscopy and self-bias-voltage measurements for high depletion μc-Si:H deposition regimes","year":2014,"lang":"en","type":"article","venue":"Canadian Journal of Physics","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":false,"route_ca_venue":true,"route_about_ca":false,"ca_institutions":"","funders":"","keywords":"Plasma-enhanced chemical vapor deposition; Biasing; Silane; Deposition (geology); Hydrogen; Silicon; Plasma; Solar cell; Chemical vapor deposition; Analytical Chemistry (journal); Crystalline silicon; Optoelectronics; Physics; Materials science; Voltage; Composite material; Chemistry","score_opus":0.016550110095985865,"score_gpt":0.2086338749708483,"score_spread":0.19208376487486242,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1837244333","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9718166,0.000656099,0.02348909,0.0001172686,0.00004369851,0.00007245008,0.00078646105,0.00046982523,0.0025485351],"genre_scores_gemma":[0.9817456,0.00042601748,0.01634261,0.000055363605,0.000013004469,0.000098209755,0.00031056805,0.00004494072,0.0009638008],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9996573,0.0000263839,0.000021757556,0.00009552887,0.00015159736,0.000047372374],"domain_scores_gemma":[0.9995776,0.00017887601,0.00007577909,0.000045701356,0.00010615026,0.000015941432],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0002859756,0.00033612535,0.00023111324,0.000512232,0.0002997569,0.00032757805,0.00070190115,0.0006378052,0.001765335],"category_scores_gemma":[0.0005653465,0.00023096651,0.00023452815,0.00043871923,0.00027309606,0.00042788466,0.0002201271,0.00080289645,0.000303385],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000077864934,0.000036942114,0.00075756107,0.000054803015,0.0000056757754,0.000044755674,0.000059296945,0.00010793725,0.9949302,0.00010243757,0.0000798871,0.0037425125],"study_design_scores_gemma":[0.0000038794246,0.000080520076,0.003118051,0.0000035378355,0.0000046611112,0.000059926413,0.000029771752,0.0019252461,0.99436533,0.00003193391,0.0003727353,0.000004457689],"about_ca_topic_score_codex":0.0009899677,"about_ca_topic_score_gemma":0.001759508,"teacher_disagreement_score":0.001765335,"about_ca_system_score_codex":0.00046767516,"about_ca_system_score_gemma":0.00022411124,"threshold_uncertainty_score":0.005905628},"labels":[],"label_agreement":null},{"id":"W1837378533","doi":"10.1109/led.2014.2321535","title":"On the Response Time of Thin-Film Silicon Lateral Metal-Semiconductor-Metal Photodetectors","year":2014,"lang":"en","type":"article","venue":"IEEE Electron Device Letters","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":3,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Photodetector; Materials science; Silicon; Optoelectronics; Amorphous silicon; Semiconductor; Nanocrystalline material; Layer (electronics); Metal; Wavelength; Nanocrystalline silicon; Optics; Crystalline silicon; Nanotechnology; Metallurgy","score_opus":0.007184183389979371,"score_gpt":0.19549212561077123,"score_spread":0.18830794222079186,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1837378533","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99072635,0.0010031658,0.00586971,0.00009180614,0.000026649677,0.000011852956,0.00015125338,0.00021813558,0.0019009592],"genre_scores_gemma":[0.9967968,0.00027482884,0.0018839812,0.000040946776,0.000010906959,0.000008973291,0.00008750871,0.000020492855,0.0008756331],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9997229,0.000028826711,0.0000112578045,0.000084264764,0.000101492005,0.000051209576],"domain_scores_gemma":[0.99881184,0.0008076024,0.0001251101,0.000052071395,0.00016543965,0.00003801481],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0003337977,0.00027002182,0.00023960599,0.00025558157,0.00016597277,0.00043412205,0.0004321721,0.00056926237,0.0016332344],"category_scores_gemma":[0.0013494304,0.00012549885,0.0001654168,0.00029606972,0.00021021195,0.00047378338,0.00015572898,0.0003585443,0.00048802476],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00049938133,0.000056050092,0.0032389893,0.000120178505,0.000026072077,0.00022034609,0.00010413963,0.0012165708,0.98014027,0.00032538656,0.00017565764,0.013876924],"study_design_scores_gemma":[0.00001123205,0.00028468927,0.0061748135,0.0000125116185,0.000027832408,0.00033717434,0.00005843598,0.015030275,0.97718155,0.00007095254,0.0007980129,0.000012542824],"about_ca_topic_score_codex":0.0007904695,"about_ca_topic_score_gemma":0.00080083415,"teacher_disagreement_score":0.0016332344,"about_ca_system_score_codex":0.0004721887,"about_ca_system_score_gemma":0.00018832729,"threshold_uncertainty_score":0.0054636598},"labels":[],"label_agreement":null},{"id":"W1838581952","doi":"10.1109/icmel.2000.838733","title":"Geometry- and bias-dependence of leakage current and overlap capacitance in a-Si:H TFTs","year":2002,"lang":"en","type":"article","venue":"","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Capacitance; Materials science; Thin-film transistor; Leakage (economics); Amorphous silicon; Amorphous solid; Optoelectronics; Silicon; Transistor; Reverse bias; Poole–Frenkel effect; Depletion region; Voltage; Condensed matter physics; Electrical engineering; Crystalline silicon; Nanotechnology; Physics; Chemistry; Electrode; Semiconductor; Crystallography; Dielectric","score_opus":0.030123267722174215,"score_gpt":0.20890023124521473,"score_spread":0.1787769635230405,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1838581952","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99872273,0.00024144379,0.00058101304,0.000023975603,0.0000034125683,0.0000048200623,0.00010153483,0.000032493514,0.000288442],"genre_scores_gemma":[0.9993606,0.000113738184,0.00029546942,0.00000994845,0.0000034928605,0.0000033187143,0.000085589374,0.000006465559,0.000121348676],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998783,0.000008898252,0.000008891942,0.00002961785,0.000046011475,0.000028187314],"domain_scores_gemma":[0.9996166,0.00014628438,0.00009964584,0.000030054773,0.00006898264,0.00003834171],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00010276006,0.00018846543,0.00018300572,0.00027476466,0.0001455397,0.0002449317,0.00020249924,0.00022877633,0.00036915494],"category_scores_gemma":[0.0007489363,0.00012508607,0.00013761276,0.00029178316,0.0003151342,0.0003517889,0.00013500113,0.00018111426,0.00011265248],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00015666803,0.000012598808,0.0028198257,0.000038001952,0.000011089594,0.00030969223,0.00007790374,0.0008540155,0.99351585,0.000082543054,0.000030206716,0.0020914406],"study_design_scores_gemma":[0.000023300257,0.0004551249,0.033046614,0.00000441422,0.000026453614,0.0007863504,0.00007063802,0.007365047,0.9577381,0.00013383129,0.00033286485,0.000017207294],"about_ca_topic_score_codex":0.0011844796,"about_ca_topic_score_gemma":0.0015147323,"teacher_disagreement_score":0.0011844796,"about_ca_system_score_codex":0.00038476585,"about_ca_system_score_gemma":0.0001384492,"threshold_uncertainty_score":0.0027916431},"labels":[],"label_agreement":null},{"id":"W1848094632","doi":"10.1139/cjp-2013-0559","title":"Boron doping in a-SiO:H<sup>,</sup>","year":2014,"lang":"en","type":"article","venue":"Canadian Journal of Physics","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":false,"route_ca_venue":true,"route_about_ca":false,"ca_institutions":"","funders":"","keywords":"Boron; Doping; Analytical Chemistry (journal); Conductivity; Silicon; Amorphous solid; Activation energy; Amorphous silicon; Oxygen; Electrical resistivity and conductivity; Physics; Crystallography; Condensed matter physics; Physical chemistry; Optoelectronics; Chemistry; Crystalline silicon","score_opus":0.008306476184592014,"score_gpt":0.17561307083425529,"score_spread":0.16730659464966327,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1848094632","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99791175,0.00035124275,0.0004103629,0.000019618754,0.0000139119265,0.0000045229463,0.00012363042,0.000019129135,0.001145855],"genre_scores_gemma":[0.9982889,0.00013609159,0.0006310938,0.000009995323,0.0000039483984,0.0000032601124,0.00009953,0.000008732589,0.00081847375],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99993396,0.000006839429,0.000004413215,0.000014696203,0.000025525937,0.000014631063],"domain_scores_gemma":[0.99983096,0.000044879547,0.00004784265,0.000011052009,0.00004361893,0.00002169391],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00009525591,0.00013962542,0.000102604274,0.00014506516,0.00018733244,0.00026898197,0.00022613643,0.00022743271,0.00093166705],"category_scores_gemma":[0.00020161147,0.000101868616,0.00008828018,0.00018059208,0.00021231025,0.00022403795,0.00011330404,0.00011554214,0.0002600944],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00023806594,0.000020764925,0.0018714535,0.00007796213,0.000016297954,0.000084709136,0.000045740882,0.00027077648,0.9950669,0.00019663521,0.00010982153,0.0020008772],"study_design_scores_gemma":[0.000012515024,0.00032413044,0.006607306,0.000006708175,0.000013318553,0.00008410218,0.000061458806,0.0017042311,0.98974586,0.00006007847,0.001376091,0.000004268337],"about_ca_topic_score_codex":0.0010648095,"about_ca_topic_score_gemma":0.0020607735,"teacher_disagreement_score":0.0010648095,"about_ca_system_score_codex":0.00020363735,"about_ca_system_score_gemma":0.00009850031,"threshold_uncertainty_score":0.0031167865},"labels":[],"label_agreement":null},{"id":"W1851187619","doi":"10.1139/cjp-2013-0629","title":"Investigation of metastability and instability effects on the minority carrier transport properties of microcrystalline silicon thin films by using the steady-state photocarrier grating technique","year":2014,"lang":"en","type":"article","venue":"Canadian Journal of Physics","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":3,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":false,"route_ca_venue":true,"route_about_ca":false,"ca_institutions":"","funders":"","keywords":"Photoconductivity; Passivation; Metastability; Silicon; Amorphous solid; Argon; Thin film; Dark current; Materials science; Microcrystalline; Microsecond; Analytical Chemistry (journal); Physics; Optics; Atomic physics; Optoelectronics; Crystallography; Composite material; Nanotechnology; Chemistry","score_opus":0.016198875134205853,"score_gpt":0.18461180172458622,"score_spread":0.16841292659038037,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1851187619","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9985825,0.00031625992,0.00087927596,0.000011877988,0.000002345459,0.0000035777523,0.000035964527,0.000012570314,0.00015568797],"genre_scores_gemma":[0.9987702,0.00019437088,0.0006970992,0.0000046761143,0.0000017606008,0.0000051918214,0.00005259239,0.0000052699806,0.00026871546],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999242,0.0000054544635,0.0000050089498,0.000019148109,0.000032842123,0.0000132469095],"domain_scores_gemma":[0.99984634,0.000058240974,0.00003698493,0.0000145076,0.000032222575,0.000011710981],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00011231697,0.00018247131,0.00016506134,0.00017017931,0.00013206893,0.00018827988,0.00021455341,0.00016120174,0.0003386193],"category_scores_gemma":[0.00021573086,0.00013680787,0.00015060215,0.00012886831,0.0001900714,0.00021717885,0.00010256857,0.00022649094,0.000052719297],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000017980723,0.00000264902,0.00042602912,0.000012456547,0.0000026572127,0.000021329599,0.00001793332,0.000041903673,0.9988146,0.000026085614,0.0000037657633,0.0006127645],"study_design_scores_gemma":[0.0000014907298,0.000073732386,0.0035998835,8.9160136e-7,0.0000059015365,0.000055597826,0.000013278217,0.00056202227,0.9955712,0.000011575857,0.00010267164,0.0000017857973],"about_ca_topic_score_codex":0.002047512,"about_ca_topic_score_gemma":0.0030682452,"teacher_disagreement_score":0.002047512,"about_ca_system_score_codex":0.00039532146,"about_ca_system_score_gemma":0.00019201115,"threshold_uncertainty_score":0.0040712357},"labels":[],"label_agreement":null},{"id":"W1858480979","doi":"10.1109/jproc.2015.2405767","title":"Transparent Semiconducting Oxide Technology for Touch Free Interactive Flexible Displays","year":2015,"lang":"en","type":"article","venue":"Proceedings of the IEEE","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":102,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"IGNIS Innovation (Canada)","funders":"National Research Foundation of Korea","keywords":"Thin-film transistor; Transparency (behavior); Transistor; Electronics; Active matrix; Computer science; Materials science; Flexible electronics; Ranging; Electronic circuit; Semiconductor; Oxide thin-film transistor; Optoelectronics; Nanotechnology; Electrical engineering; Voltage; Layer (electronics); Engineering; Telecommunications","score_opus":0.03992237299852933,"score_gpt":0.24900923573836944,"score_spread":0.20908686273984012,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1858480979","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.3436477,0.07500142,0.4238578,0.0030722166,0.0019928203,0.00026781965,0.0011134187,0.0021522418,0.14889461],"genre_scores_gemma":[0.7741366,0.038660094,0.15936199,0.0002974439,0.00027044947,0.00011675018,0.0002967363,0.00013783481,0.026722014],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999647,0.0000028573893,0.0000020681819,0.0000060076136,0.000019816402,0.000004567633],"domain_scores_gemma":[0.999967,0.000011928569,0.000005240505,0.0000034771633,0.000007772608,0.000004605404],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000070359936,0.00026203712,0.00016553578,0.00023769171,0.00028274456,0.0004898419,0.00031900464,0.00038929944,0.0021995625],"category_scores_gemma":[0.00019252228,0.00013878639,0.00023204322,0.00021100474,0.00018955179,0.0006412593,0.00022743031,0.0003875149,0.00053377554],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000032717704,0.000026404243,0.00033619668,0.0006195401,0.0000126109,0.0005725936,0.00012254073,0.0036959625,0.85539645,0.07973178,0.003545994,0.055907205],"study_design_scores_gemma":[0.00004047659,0.0005801448,0.0017931198,0.00035236718,0.00010640512,0.0025021282,0.00022029146,0.1032983,0.59024566,0.05031078,0.25046542,0.00008490089],"about_ca_topic_score_codex":0.00047135743,"about_ca_topic_score_gemma":0.0010640186,"teacher_disagreement_score":0.0021995625,"about_ca_system_score_codex":0.00031058682,"about_ca_system_score_gemma":0.00027897544,"threshold_uncertainty_score":0.007358253},"labels":[],"label_agreement":null},{"id":"W1859715300","doi":"10.1139/cjp-2013-0555","title":"Influence of hydrogen concentration on void-related microstructure in low hydrogen amorphous and crystalline silicon materials","year":2013,"lang":"en","type":"article","venue":"Canadian Journal of Physics","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":5,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":false,"route_ca_venue":true,"route_about_ca":false,"ca_institutions":"","funders":"","keywords":"Amorphous solid; Hydrogen; Microstructure; Annealing (glass); Amorphous silicon; Materials science; Crystalline silicon; Helium; Silicon; Analytical Chemistry (journal); Void (composites); Crystallography; Atomic physics; Composite material; Chemistry; Metallurgy; Physics","score_opus":0.0034547316483898036,"score_gpt":0.16354658205218436,"score_spread":0.16009185040379456,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1859715300","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99898714,0.00029941197,0.00028860202,0.000007760655,0.000003106493,0.0000042728457,0.00006155942,0.000010423978,0.00033768037],"genre_scores_gemma":[0.99925154,0.00013288639,0.0003411633,0.000004817604,0.0000016899805,0.0000043573596,0.00006063136,0.000008696026,0.00019420305],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99992776,0.00000879872,0.0000046381874,0.000018481987,0.000024439725,0.000015887375],"domain_scores_gemma":[0.99977714,0.00009350281,0.000051897132,0.000016302367,0.00003991862,0.000021277934],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00011463729,0.00012487535,0.0001383803,0.00017469152,0.00011406027,0.00034516896,0.00015271794,0.00014836677,0.0005286542],"category_scores_gemma":[0.00030766477,0.00017422126,0.00009822127,0.00014913923,0.00026806362,0.00017508942,0.00012326568,0.00017079638,0.00006721975],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000067871115,0.0000064991405,0.00073994946,0.000033641216,0.0000054009924,0.00003901002,0.00002640547,0.00020981496,0.99817014,0.000040799034,0.000009014735,0.00065160217],"study_design_scores_gemma":[0.0000067468977,0.00021828336,0.011103358,0.000003689897,0.000012957928,0.000065964254,0.000040444378,0.0009467466,0.9872895,0.0000192586,0.0002889538,0.0000040500945],"about_ca_topic_score_codex":0.0006244423,"about_ca_topic_score_gemma":0.0011356599,"teacher_disagreement_score":0.0006244423,"about_ca_system_score_codex":0.00020538627,"about_ca_system_score_gemma":0.00011899646,"threshold_uncertainty_score":0.0017685294},"labels":[],"label_agreement":null},{"id":"W1859846359","doi":"10.1139/cjp-2013-0566","title":"Lightweight amorphous silicon photovoltaic modules on flexible plastic substrate","year":2014,"lang":"en","type":"article","venue":"Canadian Journal of Physics","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":11,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":true,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Wafer; Amorphous silicon; Photovoltaic system; Optoelectronics; Substrate (aquarium); Amorphous solid; Silicon; Electrode; Shadow mask; Thin film; Polyethylene naphthalate; Materials science; Crystalline silicon; Physics; Optics; Nanotechnology; Polyethylene terephthalate; Composite material; Electrical engineering","score_opus":0.010081961749367204,"score_gpt":0.17622878162448719,"score_spread":0.16614681987511998,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1859846359","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.986478,0.0003340644,0.009886317,0.000028740682,0.0000223895,0.000029794319,0.00034928275,0.0001965499,0.002675032],"genre_scores_gemma":[0.98511916,0.00037955586,0.011701428,0.000012878054,0.000009201616,0.00003095365,0.00027200318,0.000032296968,0.0024425404],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999331,0.0000051691213,0.0000034355503,0.000017416278,0.000026918655,0.000013939069],"domain_scores_gemma":[0.999933,0.000012668351,0.000015804075,0.000017259956,0.000012756074,0.000008502517],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0000617997,0.00022192216,0.0001866928,0.00017282713,0.00015159426,0.00023487861,0.0002930522,0.00014529482,0.0013804999],"category_scores_gemma":[0.00009454705,0.00014482136,0.0002031653,0.00022837924,0.00009138474,0.00019473421,0.00019774422,0.00021591937,0.00043352178],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00001679209,0.0000075411353,0.00038229648,0.000039444425,0.000006767822,0.00010035305,0.000012635266,0.00058152137,0.995742,0.0000761725,0.000052428986,0.0029820679],"study_design_scores_gemma":[0.000008104926,0.00024968988,0.0071487064,0.000009280422,0.000017126415,0.0003151218,0.000026642454,0.0033931877,0.9858505,0.00009037461,0.0028837502,0.000007463461],"about_ca_topic_score_codex":0.00025862607,"about_ca_topic_score_gemma":0.00057890225,"teacher_disagreement_score":0.0013804999,"about_ca_system_score_codex":0.000097084936,"about_ca_system_score_gemma":0.00012103948,"threshold_uncertainty_score":0.0046182275},"labels":[],"label_agreement":null},{"id":"W1863759879","doi":"10.1139/cjp-2013-0630","title":"Investigation of meta- and in-stability effects in hydrogenated microcrystalline silicon thin films by the steady-state measurement methods","year":2014,"lang":"en","type":"article","venue":"Canadian Journal of Physics","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":3,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":false,"route_ca_venue":true,"route_about_ca":false,"ca_institutions":"","funders":"","keywords":"Photoconductivity; Conductivity; Metastability; Microcrystalline; Steady state (chemistry); Analytical Chemistry (journal); Amorphous silicon; Amorphous solid; Thin film; Materials science; Silicon; Microcrystalline silicon; Diffusion; Electrical resistivity and conductivity; Physics; Optoelectronics; Crystalline silicon; Crystallography; Chemistry; Nanotechnology; Thermodynamics; Chromatography; Physical chemistry","score_opus":0.03257688253645513,"score_gpt":0.21976098558143015,"score_spread":0.18718410304497501,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1863759879","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99539524,0.00062686316,0.0032520986,0.000029820101,0.000009412764,0.0000073740694,0.00012443529,0.00004337885,0.0005113852],"genre_scores_gemma":[0.99762493,0.0002998398,0.0013304409,0.0000120197665,0.0000036806398,0.0000093771405,0.000112124784,0.000012409597,0.00059522514],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99987745,0.000011595953,0.000007864185,0.000038436334,0.00004782389,0.00001680226],"domain_scores_gemma":[0.99977535,0.00006991667,0.00005383526,0.000020830139,0.0000645693,0.000015388783],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00014963737,0.00017686872,0.00018130742,0.00022505278,0.00019636493,0.00027858285,0.0003225887,0.00023369803,0.0008439192],"category_scores_gemma":[0.0002783649,0.00017151413,0.00015875394,0.00020230182,0.00022430385,0.0003015665,0.0001770636,0.0003513666,0.00011204814],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000030636835,0.000004965359,0.00061537256,0.00002653489,0.0000062689955,0.000033566863,0.00005194927,0.000047617992,0.99791485,0.00004617125,0.000013336945,0.0012086116],"study_design_scores_gemma":[0.0000010193886,0.000050862633,0.003221048,0.0000015083341,0.000008029751,0.000050880728,0.00003088404,0.000466541,0.9959628,0.000015884072,0.00018826418,0.0000022511051],"about_ca_topic_score_codex":0.00097525376,"about_ca_topic_score_gemma":0.0017237106,"teacher_disagreement_score":0.00097525376,"about_ca_system_score_codex":0.00044645407,"about_ca_system_score_gemma":0.00014946454,"threshold_uncertainty_score":0.003239274},"labels":[],"label_agreement":null},{"id":"W1869274936","doi":"10.1139/cjp-2013-0613","title":"Thermodynamic limits of nanophotonic light trapping in thin film silicon solar cells","year":2014,"lang":"en","type":"article","venue":"Canadian Journal of Physics","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":false,"route_ca_venue":true,"route_about_ca":false,"ca_institutions":"","funders":"U.S. Department of Energy","keywords":"Physics; Trapping; Silicon; Lattice (music); Quantum efficiency; Optics; Spectral line; Nanophotonics; Optoelectronics; Quantum dot solar cell; Ideal (ethics); Molecular physics; Condensed matter physics; Monocrystalline silicon; Quantum mechanics","score_opus":0.007196794785116647,"score_gpt":0.17117673008102496,"score_spread":0.16397993529590832,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1869274936","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.8991273,0.0027313854,0.06453412,0.0007187117,0.00007545848,0.0000356338,0.00010476912,0.00018796389,0.03248455],"genre_scores_gemma":[0.996915,0.00030214837,0.0021250078,0.00002230778,0.0000099817,0.000014941412,0.000021065825,0.000014033374,0.0005756059],"study_design_codex":"simulation_or_modeling","study_design_gemma":"theoretical_or_conceptual","domain_scores_codex":[0.99983346,0.000018298715,0.000008109226,0.00001439383,0.00009365203,0.000031984582],"domain_scores_gemma":[0.9995652,0.0002727141,0.000029580127,0.00003904119,0.00007332905,0.00002022701],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00035171394,0.00014635158,0.0002645184,0.00034413396,0.00071874826,0.0007467043,0.00043575952,0.0002980849,0.0014328491],"category_scores_gemma":[0.0014090925,0.00020949643,0.00020501374,0.00018542647,0.00095632806,0.0007705097,0.0004301598,0.0003872256,0.00013942427],"study_design_candidate":"theoretical_or_conceptual","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00014548999,0.00015925072,0.0032147698,0.00033310548,0.000052486754,0.0005992126,0.00027067267,0.39815518,0.26540446,0.3134488,0.0006314327,0.017585171],"study_design_scores_gemma":[0.000025399762,0.00009963119,0.0017785096,0.00003336428,0.000018100996,0.00016011496,0.000084147716,0.82389086,0.089836724,0.08170834,0.0023246286,0.000040150313],"about_ca_topic_score_codex":0.0019256806,"about_ca_topic_score_gemma":0.0019038871,"teacher_disagreement_score":0.0019256806,"about_ca_system_score_codex":0.00062090415,"about_ca_system_score_gemma":0.0003145975,"threshold_uncertainty_score":0.0047932863},"labels":[],"label_agreement":null},{"id":"W1881756547","doi":"10.1139/cjp-2013-0588","title":"Preferential crystal growth of germanium by solid phase crystallization","year":2014,"lang":"en","type":"article","venue":"Canadian Journal of Physics","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":6,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":false,"route_ca_venue":true,"route_about_ca":false,"ca_institutions":"","funders":"","keywords":"Crystallization; Impurity; Germanium; Crystallinity; Evaporation; Crystal (programming language); Crystal growth; Amorphous solid; Materials science; Silicon; Phase (matter); Analytical Chemistry (journal); Crystallography; Chemical engineering; Chemistry; Physics; Optoelectronics; Chromatography","score_opus":0.008102465148219967,"score_gpt":0.20865004758252906,"score_spread":0.2005475824343091,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1881756547","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9780978,0.0018021608,0.015602226,0.00009528785,0.000042957257,0.00007551336,0.00032374132,0.00012321558,0.0038371293],"genre_scores_gemma":[0.9775587,0.0015715089,0.018979002,0.000020339772,0.0000094904435,0.000038424827,0.00029914142,0.00005307569,0.0014704134],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99985814,0.0000128443135,0.000010164148,0.000037808608,0.00004992231,0.00003108916],"domain_scores_gemma":[0.9998981,0.000037439644,0.000014418928,0.000016138194,0.00002435554,0.000009577115],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00015419493,0.00037241416,0.0003896776,0.0002136943,0.00021987224,0.00031020743,0.00027028171,0.00026284234,0.00071210053],"category_scores_gemma":[0.00022939556,0.00029464456,0.00027532558,0.00024732083,0.00023567045,0.00027295,0.0003121783,0.0004311298,0.0003034984],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000015516323,0.0000066972057,0.00012179443,0.00007022424,0.0000039245033,0.000052675296,0.000017704133,0.00035545297,0.9976968,0.00031438423,0.00005293161,0.0012918593],"study_design_scores_gemma":[0.0000067586166,0.00003191916,0.00015608486,0.0000025151462,0.0000027439949,0.000035735557,0.000005427905,0.0014297435,0.99766564,0.000037016773,0.000624149,0.0000023209848],"about_ca_topic_score_codex":0.0012302868,"about_ca_topic_score_gemma":0.0024854536,"teacher_disagreement_score":0.0012302868,"about_ca_system_score_codex":0.00027942343,"about_ca_system_score_gemma":0.00035383776,"threshold_uncertainty_score":0.0024462938},"labels":[],"label_agreement":null},{"id":"W1888369181","doi":"10.1139/cjp-2013-0612","title":"Fabrication of high gauge factor piezoresistive nanocrystalline Si film using aluminum-induced crystallization of HWCVD deposited a-Si:H","year":2014,"lang":"en","type":"article","venue":"Canadian Journal of Physics","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":4,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":false,"route_ca_venue":true,"route_about_ca":false,"ca_institutions":"","funders":"Council of Scientific and Industrial Research, India","keywords":"Gauge factor; Piezoresistive effect; Annealing (glass); Crystallization; Nanocrystalline material; Fabrication; Aluminium; Thin film; Optoelectronics; Physics; Composite material; Materials science; Nanotechnology","score_opus":0.015400996539577591,"score_gpt":0.1996748881553927,"score_spread":0.1842738916158151,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1888369181","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99187917,0.00021977148,0.0052576563,0.00004902109,0.000028305856,0.00005087174,0.00041729765,0.00014367445,0.0019541315],"genre_scores_gemma":[0.98058873,0.00027138123,0.017035354,0.000013914947,0.0000083441555,0.000055777382,0.0002650838,0.00003204975,0.0017295093],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999201,0.0000026660766,0.0000061052892,0.000024408326,0.00003459386,0.000012164858],"domain_scores_gemma":[0.99986994,0.00002562193,0.00003010548,0.00002447717,0.000035074903,0.000014776743],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00010899114,0.00020950263,0.00025209898,0.00013602129,0.00020296955,0.00020772974,0.0003264725,0.00018229238,0.0007280133],"category_scores_gemma":[0.00016872464,0.00018443445,0.00013792425,0.00020036583,0.00017182578,0.00017744084,0.00014756861,0.0003085495,0.00022361071],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000005289031,0.0000026888786,0.000047090925,0.0000107893975,0.000001306174,0.000021431753,0.000008624572,0.000038283593,0.9995407,0.000031317697,0.00001876566,0.0002738003],"study_design_scores_gemma":[0.0000048725433,0.000033932614,0.0009216359,0.0000016359654,0.000003165766,0.00004129534,0.000009677742,0.0010054117,0.9974922,0.000007948388,0.00047579402,0.0000023852147],"about_ca_topic_score_codex":0.0033663742,"about_ca_topic_score_gemma":0.009189968,"teacher_disagreement_score":0.0033663742,"about_ca_system_score_codex":0.0004607291,"about_ca_system_score_gemma":0.00039140863,"threshold_uncertainty_score":0.0066936016},"labels":[],"label_agreement":null},{"id":"W1894262035","doi":"10.1109/miel.2002.1003316","title":"Integration issues for polymeric dielectrics in large area electronics [TFTs]","year":2003,"lang":"en","type":"article","venue":"","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":2,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Thin-film transistor; Materials science; Chemical-mechanical planarization; Dielectric; Benzocyclobutene; Optoelectronics; Permittivity; Transistor; Amorphous solid; Electronic engineering; Electrical engineering; Composite material; Voltage; Polishing; Engineering","score_opus":0.009766942958193293,"score_gpt":0.22234976464148684,"score_spread":0.21258282168329354,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1894262035","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.944503,0.018075228,0.032971647,0.00051460316,0.0000947564,0.000090470065,0.00003740884,0.000176831,0.003535988],"genre_scores_gemma":[0.9739584,0.00566545,0.01796677,0.00012757053,0.000071251474,0.00003381385,0.00006639576,0.00004924477,0.0020611146],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9995486,0.000118558004,0.00003279677,0.00006513421,0.00017043558,0.00006455816],"domain_scores_gemma":[0.9988753,0.0004212791,0.00040749108,0.000061795676,0.00018756044,0.000046515488],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0008228265,0.00045849686,0.00023325281,0.0002824132,0.00059109845,0.0010130574,0.00038601982,0.0007298051,0.00080988865],"category_scores_gemma":[0.0012706963,0.00029331216,0.0002569327,0.00030514027,0.00041817056,0.0011696907,0.0003238694,0.00063453626,0.00036278059],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000057061345,0.000023540028,0.00072104414,0.0001698343,0.000018355122,0.00026730663,0.00009958596,0.00037708215,0.991879,0.00032513303,0.0000384765,0.0060235183],"study_design_scores_gemma":[0.000013041105,0.0008549728,0.0027663645,0.000028127473,0.00009172698,0.0016805336,0.00015700862,0.0012268476,0.98840046,0.00024367303,0.004524296,0.000012956906],"about_ca_topic_score_codex":0.00034105012,"about_ca_topic_score_gemma":0.0006310104,"teacher_disagreement_score":0.0010130574,"about_ca_system_score_codex":0.00037878013,"about_ca_system_score_gemma":0.000219727,"threshold_uncertainty_score":0.0043515563},"labels":[],"label_agreement":null},{"id":"W1906386414","doi":"10.1002/pip.2281","title":"H<sub>2</sub> plasma treatment at the p/i interface of a hydrogenated amorphous Si absorption layer for high‐performance Si thin film solar cells","year":2012,"lang":"en","type":"article","venue":"Progress in Photovoltaics Research and Applications","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":15,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Samsung","keywords":"Materials science; Amorphous silicon; Layer (electronics); Absorption (acoustics); Chemical vapor deposition; Amorphous solid; Silicon; Analytical Chemistry (journal); Open-circuit voltage; Optoelectronics; Tandem; Plasma-enhanced chemical vapor deposition; Thin film; Plasma; Nanotechnology; Crystalline silicon; Voltage; Chemistry; Composite material; Electrical engineering; Crystallography","score_opus":0.030613623167961655,"score_gpt":0.301917220024839,"score_spread":0.2713035968568773,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1906386414","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.98777544,0.00087788847,0.009833418,0.000073186995,0.000039634888,0.000030040894,0.00012493033,0.0001621213,0.0010831857],"genre_scores_gemma":[0.9940621,0.00027402677,0.0048703975,0.000025031084,0.000008953445,0.00001871303,0.00005654522,0.000018054521,0.0006661553],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99995446,0.0000037480818,0.0000027665208,0.000011702914,0.000018608656,0.000008690376],"domain_scores_gemma":[0.9999553,0.000007967392,0.000015082271,0.000006171832,0.000009331052,0.000006125356],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000072651965,0.0002499021,0.0001835702,0.00008997914,0.00015024858,0.0003154294,0.00025471093,0.0002671846,0.0005703869],"category_scores_gemma":[0.00008473852,0.00019332171,0.00018098822,0.000097209544,0.00015060388,0.00021930232,0.0001629249,0.000273349,0.00019034343],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0000151019585,0.0000038807825,0.00009296335,0.000019420484,0.000004322729,0.000025203137,0.0000073661313,0.000117323296,0.99887437,0.000024515304,0.0000314537,0.0007839913],"study_design_scores_gemma":[0.000004341559,0.000067953515,0.0009624388,0.0000012594982,0.0000066327893,0.000061633575,0.00000776695,0.0010994023,0.9973578,0.000012010487,0.00041668638,0.0000019118727],"about_ca_topic_score_codex":0.000351168,"about_ca_topic_score_gemma":0.0005208443,"teacher_disagreement_score":0.0005703869,"about_ca_system_score_codex":0.00021416364,"about_ca_system_score_gemma":0.0001693376,"threshold_uncertainty_score":0.0019081235},"labels":[],"label_agreement":null},{"id":"W1909773603","doi":"10.1109/amlcd.1995.540954","title":"An analytical model for a-Si:H transistors based on TFT device characteristics","year":2002,"lang":"en","type":"article","venue":"","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":2,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Thin-film transistor; Transistor; Channel length modulation; Calibration; Electronic engineering; Voltage; Modulation (music); Materials science; Threshold voltage; Channel (broadcasting); Electronic circuit; Optoelectronics; Computer science; Electrical engineering; Engineering; Physics; Nanotechnology","score_opus":0.04295573460147165,"score_gpt":0.24007868138268404,"score_spread":0.1971229467812124,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1909773603","genre_codex":"methods","genre_gemma":"methods","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"methods","genre_consensus":"methods","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.013931253,0.0009431766,0.96542203,0.0005250522,0.00014733004,0.00014847975,0.0004969663,0.0011975855,0.017188115],"genre_scores_gemma":[0.7062902,0.0052094115,0.21402146,0.0006675347,0.0003481219,0.0009172788,0.0010045894,0.0005993294,0.070942074],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9998246,0.000017081731,0.000010605793,0.000042975134,0.00008145867,0.000023347158],"domain_scores_gemma":[0.99986076,0.00005468208,0.000016232641,0.000015157884,0.000046950783,0.0000062173017],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00019563292,0.0006433802,0.00048406498,0.00057369424,0.00035243374,0.0006968998,0.0016353606,0.0016272314,0.003458082],"category_scores_gemma":[0.0007634091,0.00032245432,0.00083580957,0.0005125895,0.00037232097,0.0013879972,0.00030192523,0.0006562609,0.0025015834],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00007988971,0.00006940806,0.0006698282,0.00045766376,0.00005416372,0.0007097235,0.0003463009,0.7501224,0.11356903,0.07976298,0.0070389393,0.047119584],"study_design_scores_gemma":[0.000007318389,0.000037045815,0.000115973766,0.000017951777,0.00001406122,0.00019155118,0.000010772981,0.9814074,0.004492486,0.006078959,0.0076151704,0.000011349978],"about_ca_topic_score_codex":0.0028705825,"about_ca_topic_score_gemma":0.0021044773,"teacher_disagreement_score":0.003458082,"about_ca_system_score_codex":0.00089506834,"about_ca_system_score_gemma":0.0006154018,"threshold_uncertainty_score":0.011568427},"labels":[],"label_agreement":null},{"id":"W1912169143","doi":"10.1557/proc-715-a7.4","title":"Reduction of Dark Current Under Reverse Bias in a-Si:H p-i-n Photodetectors","year":2002,"lang":"en","type":"article","venue":"MRS Proceedings","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":11,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Dark current; Materials science; Optoelectronics; Photodetector; Plasma-enhanced chemical vapor deposition; Photodiode; Diode; Reverse bias; Heterojunction; Amorphous silicon; Reverse leakage current; Chemical vapor deposition; Biasing; Current (fluid); Silicon; Voltage; Crystalline silicon; Electrical engineering; Schottky diode","score_opus":0.041372863841169054,"score_gpt":0.22469977186821663,"score_spread":0.18332690802704757,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1912169143","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99402136,0.00054807734,0.0020386276,0.00016694864,0.000039499253,0.000018312676,0.00022645154,0.0002632695,0.002677563],"genre_scores_gemma":[0.9962573,0.00019225237,0.0008973329,0.00006564505,0.000018329172,0.000014256163,0.0001319338,0.00003653732,0.0023863735],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9997404,0.000034824,0.000012662336,0.00007070665,0.00008915462,0.000052216226],"domain_scores_gemma":[0.99946696,0.00019369459,0.00007013963,0.00006919922,0.00013370976,0.000066362925],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0003007617,0.0003188441,0.000289549,0.0002758324,0.00036140432,0.0006003158,0.00080959074,0.0006835972,0.0017922276],"category_scores_gemma":[0.00082037674,0.00021989866,0.00015373116,0.0002637322,0.0004769151,0.0005010649,0.00024510082,0.00046049283,0.00050294015],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00037598755,0.00006237535,0.0008937026,0.000045987308,0.000009187056,0.00012434252,0.000100510864,0.00018751845,0.99468166,0.00016463852,0.00024976447,0.0031044278],"study_design_scores_gemma":[0.000024301164,0.00027641506,0.0056855404,0.000010387389,0.000015424119,0.00015104449,0.00006121606,0.0032194322,0.9897404,0.00010193977,0.0007046577,0.000009266797],"about_ca_topic_score_codex":0.0016174767,"about_ca_topic_score_gemma":0.0027806247,"teacher_disagreement_score":0.0017922276,"about_ca_system_score_codex":0.0005255483,"about_ca_system_score_gemma":0.00033516603,"threshold_uncertainty_score":0.0059955716},"labels":[],"label_agreement":null},{"id":"W191644692","doi":"10.1023/a:1026199608881","title":"Conductance fluctuations in VHF-PECVD grown hydrogenated microcrystalline silicon thin films","year":2003,"lang":"en","type":"article","venue":"Journal of Materials Science Materials in Electronics","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Saskatchewan","funders":"","keywords":"Silane; Microcrystalline silicon; Crystallinity; Materials science; Thin film; Analytical Chemistry (journal); Noise (video); Plasma-enhanced chemical vapor deposition; Silicon; Spectral line; Microcrystalline; Chemistry; Optoelectronics; Crystalline silicon; Crystallography; Nanotechnology; Composite material; Physics; Amorphous silicon","score_opus":0.008355320701293986,"score_gpt":0.22168659759737439,"score_spread":0.2133312768960804,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W191644692","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99872845,0.00012377801,0.00029642181,0.00006071184,0.000015844156,0.0000030890671,0.0001914093,0.000047552578,0.0005327569],"genre_scores_gemma":[0.9994754,0.000039376628,0.000107404165,0.000009256977,0.0000058124524,0.0000021476174,0.000086784254,0.000009338384,0.0002643807],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998522,0.000013089762,0.0000057546777,0.00003956873,0.000049411792,0.00003990167],"domain_scores_gemma":[0.9995302,0.00024034576,0.00005496862,0.00004716225,0.00009078165,0.000036584006],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00014053062,0.00016491537,0.00027749443,0.00026597353,0.00025600495,0.00040404426,0.0003435935,0.00036831672,0.0015033331],"category_scores_gemma":[0.00068418146,0.00013192142,0.00013121634,0.0003075319,0.00036564632,0.00032746783,0.00013939568,0.0004828617,0.00013121108],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0006033133,0.00007456311,0.003045866,0.00007897832,0.000049225575,0.0008204504,0.00032951694,0.0021819563,0.9877708,0.00053844595,0.0005599422,0.0039469004],"study_design_scores_gemma":[0.00004715138,0.00045175047,0.04857844,0.000022292286,0.000046154935,0.00044174213,0.00037788815,0.048719995,0.90004987,0.00028469108,0.00094534445,0.000034657805],"about_ca_topic_score_codex":0.002471445,"about_ca_topic_score_gemma":0.0020523514,"teacher_disagreement_score":0.002471445,"about_ca_system_score_codex":0.00065579446,"about_ca_system_score_gemma":0.00013755124,"threshold_uncertainty_score":0.0050290823},"labels":[],"label_agreement":null},{"id":"W1921307911","doi":"10.1139/cjp-2013-0606","title":"Material and growth mechanism studies of microcrystalline silicon deposited from SiF<sub>4</sub>/H<sub>2</sub>/Ar gas mixtures","year":2014,"lang":"en","type":"article","venue":"Canadian Journal of Physics","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":13,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":false,"route_ca_venue":true,"route_about_ca":false,"ca_institutions":"","funders":"Akademie Věd České Republiky; Forschungszentrum Jülich","keywords":"Microcrystalline silicon; Photocurrent; Microcrystalline; Silicon; Analytical Chemistry (journal); Physics; Layer (electronics); Thin film; Deposition (geology); Substrate (aquarium); Plasma; Crystalline silicon; Crystallography; Materials science; Nanotechnology; Optoelectronics; Chemistry","score_opus":0.007588626853773041,"score_gpt":0.17599219099869087,"score_spread":0.16840356414491783,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1921307911","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9966371,0.0012172025,0.00090352993,0.000027709835,0.000009133412,0.0000207157,0.00030875593,0.000031510586,0.00084423786],"genre_scores_gemma":[0.99586654,0.00065423065,0.0023941263,0.000011341258,0.0000055215924,0.000017139511,0.00021854271,0.000010348929,0.0008220973],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.999928,0.0000042897295,0.0000034942834,0.000019501838,0.000030200143,0.000014618982],"domain_scores_gemma":[0.99992514,0.000024618497,0.000019171131,0.000006012821,0.000018438595,0.0000065858426],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000087755936,0.00018996611,0.00022329243,0.00020072723,0.0001602019,0.00016824093,0.00033024055,0.0002446031,0.0011063298],"category_scores_gemma":[0.00019878925,0.00016197968,0.00016452836,0.00013184671,0.00017495773,0.00017936372,0.000102816026,0.00013889243,0.00013628276],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000055907967,0.000007959264,0.00047833912,0.00007518448,0.000008433309,0.00009245609,0.000030966636,0.0004035931,0.99762887,0.00007329289,0.000042676653,0.0011024182],"study_design_scores_gemma":[0.000009191695,0.00015772117,0.0060718125,0.0000055185133,0.000013473319,0.00014249788,0.00003295602,0.0024812347,0.99021846,0.000027145308,0.0008353919,0.000004635484],"about_ca_topic_score_codex":0.0030119137,"about_ca_topic_score_gemma":0.003050888,"teacher_disagreement_score":0.0030119137,"about_ca_system_score_codex":0.00035277344,"about_ca_system_score_gemma":0.00015413055,"threshold_uncertainty_score":0.0059887767},"labels":[],"label_agreement":null},{"id":"W1924543959","doi":"10.1139/cjp-2013-0545","title":"Exploring the infrared-sensing properties of polymorphous silicon-germanium (pm-Si<sub><i>x</i></sub>Ge<sub><i>y</i></sub>:H) thin films","year":2014,"lang":"en","type":"article","venue":"Canadian Journal of Physics","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":8,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":false,"route_ca_venue":true,"route_about_ca":false,"ca_institutions":"","funders":"Consejo Nacional de Ciencia y Tecnología","keywords":"Germanium; Infrared; Responsivity; Silicon; Physics; Temperature coefficient; Thin film; Optoelectronics; Analytical Chemistry (journal); Optics; Photodetector","score_opus":0.0254573687489557,"score_gpt":0.1680454530249721,"score_spread":0.14258808427601638,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1924543959","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9969451,0.000734143,0.0015072245,0.000025531828,0.0000074470126,0.000009383933,0.000058909456,0.000012755685,0.0006995298],"genre_scores_gemma":[0.99489623,0.0006531891,0.003718593,0.000021724549,0.0000048613088,0.000007676864,0.000057230885,0.0000072159087,0.0006333308],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999485,0.0000055394844,0.0000031928141,0.000015301368,0.000020319832,0.0000071726326],"domain_scores_gemma":[0.99991155,0.00003640029,0.00002039421,0.000006618695,0.000020357,0.0000046140767],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00012987829,0.00020368997,0.00015263118,0.00009649636,0.00010996577,0.0002087692,0.00017080942,0.00021617622,0.0006883394],"category_scores_gemma":[0.00016452333,0.00012026806,0.00013107403,0.00012123873,0.00014044825,0.0002758545,0.00009884064,0.00022702821,0.00014106739],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00001638233,0.0000045855622,0.0003023717,0.000034101857,0.0000040076047,0.000022638142,0.000014233187,0.000069545895,0.99848,0.000024748471,0.000009167088,0.0010181605],"study_design_scores_gemma":[0.0000022263873,0.00015017987,0.0027420719,0.0000029196176,0.000011536481,0.000086658714,0.0000471679,0.00061569666,0.9959369,0.000015031835,0.00038697929,0.0000026011537],"about_ca_topic_score_codex":0.00024956113,"about_ca_topic_score_gemma":0.0006125975,"teacher_disagreement_score":0.0006883394,"about_ca_system_score_codex":0.000078126446,"about_ca_system_score_gemma":0.000062519364,"threshold_uncertainty_score":0.0023027658},"labels":[],"label_agreement":null},{"id":"W1929086462","doi":"10.1139/cjp-2013-0636","title":"Investigation of porosity and atmospheric gas diffusion in microcrystalline silicon fabricated at high growth rates","year":2013,"lang":"en","type":"article","venue":"Canadian Journal of Physics","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":3,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":false,"route_ca_venue":true,"route_about_ca":false,"ca_institutions":"","funders":"European Commission","keywords":"Microcrystalline; Raman spectroscopy; Silicon; Analytical Chemistry (journal); Microcrystalline silicon; Deposition (geology); Porosity; Oxygen; Porous silicon; Fourier transform infrared spectroscopy; Diffusion; Intensity (physics); Microstructure; Materials science; Optics; Crystalline silicon; Composite material; Physics; Chemistry; Crystallography; Environmental chemistry; Optoelectronics","score_opus":0.006425393134257866,"score_gpt":0.15574780474709818,"score_spread":0.14932241161284032,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1929086462","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9985228,0.00046260117,0.0006347498,0.0000122655265,0.0000052232745,0.00000481286,0.000071589675,0.000019878067,0.0002660676],"genre_scores_gemma":[0.9978276,0.00037962376,0.0013086095,0.000005214652,0.000003428591,0.00000773037,0.00009330393,0.000014913473,0.00035947643],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99987054,0.0000077097675,0.000006249726,0.000033846518,0.00005441896,0.000027190428],"domain_scores_gemma":[0.9995876,0.00019029606,0.00010379345,0.000032505806,0.00006171554,0.000024084036],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00014667961,0.00018118904,0.00019640499,0.00019369442,0.0001309295,0.00025244942,0.0002673102,0.0002047426,0.00046514766],"category_scores_gemma":[0.0004520191,0.00023712333,0.00014394576,0.00019074313,0.00023435694,0.0002483596,0.00020519971,0.0003299482,0.000080131016],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00003109017,0.000006212438,0.0002710449,0.000029230114,0.0000036077006,0.000040005823,0.000030706866,0.000092538896,0.99877375,0.000019739002,0.000006939894,0.0006951294],"study_design_scores_gemma":[0.0000033596225,0.00013419428,0.0060607363,0.0000032289615,0.000009822495,0.0001004126,0.000030272759,0.00064665393,0.99266064,0.0000077817185,0.00033926993,0.0000036598176],"about_ca_topic_score_codex":0.0014455457,"about_ca_topic_score_gemma":0.0027571793,"teacher_disagreement_score":0.0014455457,"about_ca_system_score_codex":0.00031235366,"about_ca_system_score_gemma":0.0001743346,"threshold_uncertainty_score":0.0028742552},"labels":[],"label_agreement":null},{"id":"W1954672870","doi":"10.1109/pvsc.2002.1190834","title":"Very low surface recombination velocities on p- and n-type silicon wafers passivated with hydrogenated amorphous silicon films","year":2003,"lang":"en","type":"article","venue":"","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":87,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"","funders":"Institute of Gender and Health","keywords":"Passivation; Plasma-enhanced chemical vapor deposition; Materials science; Silicon nitride; Wafer; Silicon; Amorphous silicon; Chemical vapor deposition; Carrier lifetime; Amorphous solid; Nanocrystalline silicon; Analytical Chemistry (journal); Crystalline silicon; Optoelectronics; Nanotechnology; Layer (electronics); Crystallography; Chemistry","score_opus":0.006894766679569006,"score_gpt":0.17415606696875766,"score_spread":0.16726130028918865,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1954672870","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.997341,0.0006109214,0.0012037748,0.000013418721,0.000009155583,0.000005809351,0.000093693634,0.00006278217,0.0006595158],"genre_scores_gemma":[0.99621284,0.00043248213,0.0014988227,0.000008045897,0.000006547852,0.000008242789,0.00017963184,0.000026814234,0.001626658],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.999838,0.000016934518,0.0000066956086,0.000032906188,0.00006362693,0.000041791205],"domain_scores_gemma":[0.9997582,0.00009560304,0.000051813517,0.000031735522,0.000042407653,0.000020213343],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00013517865,0.00029288713,0.00030997506,0.00016779236,0.00015531019,0.00031419165,0.00038754556,0.00026967988,0.00094936904],"category_scores_gemma":[0.00037292892,0.0001608555,0.00018738765,0.00018745841,0.00022317875,0.00019646811,0.00013665271,0.00024868632,0.0003556247],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000070378155,0.000007198624,0.00028584685,0.000023471637,0.000008565323,0.000037243488,0.00003214971,0.00019784347,0.9976956,0.000051386647,0.000037597176,0.0015526061],"study_design_scores_gemma":[0.000008171291,0.00022448838,0.0025947462,0.0000026872633,0.000010222504,0.00006722665,0.000019769988,0.0011874597,0.9953551,0.000019322424,0.00050743157,0.0000033651074],"about_ca_topic_score_codex":0.000640429,"about_ca_topic_score_gemma":0.00065526844,"teacher_disagreement_score":0.00094936904,"about_ca_system_score_codex":0.00022483186,"about_ca_system_score_gemma":0.00012287068,"threshold_uncertainty_score":0.003175974},"labels":[],"label_agreement":null},{"id":"W1963525539","doi":"10.1002/j.2168-0159.2012.tb05743.x","title":"15.2: WITHDRAWN 15.3: Stabile AMOLED Displays by Process Tuning and Backplane‐OLED Compensation","year":2012,"lang":"en","type":"article","venue":"SID Symposium Digest of Technical Papers","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"IGNIS Innovation (Canada)","funders":"","keywords":"Backplane; AMOLED; OLED; Compensation (psychology); Computer science; Materials science; Optoelectronics; Thin-film transistor; Computer hardware; Active matrix; Nanotechnology","score_opus":0.004877401703002523,"score_gpt":0.20212822407549363,"score_spread":0.1972508223724911,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1963525539","genre_codex":"other","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.08529079,0.009380808,0.024095189,0.03227342,0.10767132,0.0017578577,0.028376818,0.0064067803,0.704747],"genre_scores_gemma":[0.16108505,0.0029226048,0.00684116,0.0050382684,0.0030132106,0.00025318144,0.0083637,0.0016468801,0.8108359],"study_design_codex":"not_applicable","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99950397,0.000019457,0.000035685167,0.000036964117,0.00032374228,0.000080300815],"domain_scores_gemma":[0.99901867,0.00013384545,0.00005878743,0.000162543,0.0005470415,0.00007910004],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00066234736,0.0003946612,0.0003495869,0.0010002585,0.0014456545,0.0015078376,0.00075628364,0.0021112855,0.056926996],"category_scores_gemma":[0.0018116883,0.0003382265,0.00039365364,0.00049487955,0.00065018167,0.0009336086,0.00073987077,0.0023263078,0.027368268],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0013969253,0.00032639963,0.0014397711,0.00091184455,0.000050465318,0.00256216,0.00046320053,0.00050726096,0.25888875,0.019121515,0.6148554,0.09947633],"study_design_scores_gemma":[0.00006196768,0.00010638586,0.004416549,0.00007630453,0.000011162457,0.0004438836,0.000050265055,0.00030937837,0.05638816,0.00090051215,0.9371891,0.000046281966],"about_ca_topic_score_codex":0.004331584,"about_ca_topic_score_gemma":0.00721536,"teacher_disagreement_score":0.056926996,"about_ca_system_score_codex":0.0019246248,"about_ca_system_score_gemma":0.0016521795,"threshold_uncertainty_score":0.19043976},"labels":[],"label_agreement":null},{"id":"W1963551034","doi":"10.1109/led.2014.2358559","title":"Hydrogenated Nanocrystalline Silicon Near Infrared Photodiode Detector","year":2014,"lang":"en","type":"article","venue":"IEEE Electron Device Letters","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":7,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Photodiode; Materials science; Amorphous silicon; Optoelectronics; Silicon; Quantum efficiency; Dark current; Chemical vapor deposition; Nanocrystalline silicon; Infrared; Nanocrystalline material; Plasma-enhanced chemical vapor deposition; Dynamic range; Amorphous solid; Substrate (aquarium); Photodetector; Analytical Chemistry (journal); Optics; Crystalline silicon; Nanotechnology; Physics; Chemistry","score_opus":0.00518930249282693,"score_gpt":0.18578545546319192,"score_spread":0.180596152970365,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1963551034","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.93544203,0.0035459718,0.050965622,0.00026376755,0.0002359334,0.000115100265,0.00088068674,0.00072836864,0.007822565],"genre_scores_gemma":[0.9217897,0.0013098847,0.069599606,0.00011657268,0.000052054595,0.00006419436,0.0005215358,0.000036745714,0.00650968],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99976283,0.000010935303,0.0000096970525,0.00007588716,0.00012076669,0.00001996088],"domain_scores_gemma":[0.99983966,0.000036909172,0.000029771069,0.00002814309,0.000051004212,0.000014398449],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000116391966,0.00018315899,0.00029751594,0.00015023412,0.00015646545,0.00028960506,0.000788249,0.00034905737,0.00076284586],"category_scores_gemma":[0.00017458395,0.00015501902,0.00020742851,0.0002083234,0.00018096199,0.00032043448,0.00021730913,0.0002634349,0.0004177534],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000028053357,0.000007010577,0.00033374826,0.00003870935,0.000010452058,0.0000683982,0.000009849646,0.000104432846,0.99480385,0.00010823235,0.00018119719,0.004306106],"study_design_scores_gemma":[0.000007404169,0.000085653264,0.0015359326,0.000002499552,0.00001693085,0.000249913,0.00001412222,0.0018780354,0.99299777,0.000021693579,0.0031817209,0.0000082523575],"about_ca_topic_score_codex":0.0012922888,"about_ca_topic_score_gemma":0.0032191563,"teacher_disagreement_score":0.0012922888,"about_ca_system_score_codex":0.00064472074,"about_ca_system_score_gemma":0.00026749505,"threshold_uncertainty_score":0.0046777725},"labels":[],"label_agreement":null},{"id":"W1963602839","doi":"10.1103/physrevb.79.125405","title":"X-ray reflectometry characterization of porous silicon films prepared by a glancing-angle deposition method","year":2009,"lang":"en","type":"article","venue":"Physical Review B","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":20,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McGill University","funders":"","keywords":"Materials science; Reflectometry; Deposition (geology); Porosity; Thin film; Chemical vapor deposition; Substrate (aquarium); Refractive index; Silicon; Optics; Porous silicon; Analytical Chemistry (journal); Composite material; Nanotechnology; Optoelectronics; Physics; Chemistry","score_opus":0.009217872863370917,"score_gpt":0.28208638619866166,"score_spread":0.2728685133352908,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1963602839","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9848201,0.0004132925,0.013624451,0.000029088907,0.0000082832885,0.000020439782,0.00019006903,0.00012898915,0.00076522364],"genre_scores_gemma":[0.9810627,0.0004753576,0.017564766,0.000013072714,0.000003817693,0.000019491314,0.00020876485,0.000030075633,0.0006219389],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998567,0.000013515374,0.0000087086655,0.000028225657,0.000073688316,0.000019165853],"domain_scores_gemma":[0.9997093,0.00012022944,0.000070013935,0.000040884475,0.000046648056,0.000012952721],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00025665358,0.00025052475,0.00021400914,0.00029501054,0.00013263659,0.0002456445,0.00031591332,0.00020281054,0.00062010693],"category_scores_gemma":[0.00058074004,0.0002022995,0.00014984683,0.00026676996,0.00026636178,0.00021399689,0.00016771797,0.0002865526,0.00012222902],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000021272936,0.0000023935975,0.00015042169,0.000017662358,0.0000025251093,0.000018474473,0.000017336999,0.000114590184,0.99883705,0.000038381182,0.000009291445,0.00077057333],"study_design_scores_gemma":[0.0000045889756,0.000082899685,0.0032109136,0.0000020801679,0.000005318997,0.00011542754,0.000018914052,0.0012538334,0.99504495,0.00001892322,0.00023821944,0.0000039040365],"about_ca_topic_score_codex":0.0007254473,"about_ca_topic_score_gemma":0.00093825144,"teacher_disagreement_score":0.0007254473,"about_ca_system_score_codex":0.00016896213,"about_ca_system_score_gemma":0.00014506944,"threshold_uncertainty_score":0.0020744205},"labels":[],"label_agreement":null},{"id":"W1964421720","doi":"10.1088/0022-3727/42/14/145115","title":"The role of bulk and interface states on performance of a-Si : H p-i-n solar cells using reverse current–voltage technique","year":2009,"lang":"en","type":"article","venue":"Journal of Physics D Applied Physics","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":4,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"PerkinElmer Biosignal; Concordia University","funders":"University Grants Commission","keywords":"Current (fluid); Optoelectronics; Voltage; Materials science; Interface (matter); Analytical Chemistry (journal); Chemistry; Engineering physics; Electrical engineering; Physics; Thermodynamics; Engineering; Composite material; Environmental chemistry","score_opus":0.0075851496897607895,"score_gpt":0.21060165999368963,"score_spread":0.20301651030392884,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1964421720","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9979241,0.0005753973,0.0008532924,0.000016425585,0.000004875583,0.0000028972124,0.00009880601,0.00003881325,0.0004854195],"genre_scores_gemma":[0.9990404,0.00028592112,0.00035135375,0.000008425741,0.0000035824905,0.0000026615119,0.00009133342,0.000012011662,0.00020424022],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998568,0.000014312488,0.00000849255,0.000043091313,0.000058076133,0.000019245237],"domain_scores_gemma":[0.99972016,0.00013536481,0.000038427574,0.00002458823,0.00006986262,0.000011665644],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0001751223,0.00031465807,0.00031978963,0.00017838948,0.00010303146,0.00044280526,0.00036893084,0.0003907493,0.00071581104],"category_scores_gemma":[0.0003477595,0.00014367644,0.00020564102,0.00018908228,0.00020945248,0.0003417792,0.0001484875,0.00026510187,0.00026752794],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00014161586,0.000022496533,0.0025155586,0.00006374653,0.000017925693,0.00008318151,0.00005292106,0.0010686618,0.99093866,0.000037534668,0.00003416635,0.0050235395],"study_design_scores_gemma":[0.0000081035405,0.0004891805,0.017230399,0.000011580342,0.000045679742,0.000171563,0.000069200614,0.010136028,0.97140414,0.00005427942,0.00036804515,0.000011874639],"about_ca_topic_score_codex":0.0006140086,"about_ca_topic_score_gemma":0.0006448452,"teacher_disagreement_score":0.00071581104,"about_ca_system_score_codex":0.00015088849,"about_ca_system_score_gemma":0.00007016944,"threshold_uncertainty_score":0.0023946762},"labels":[],"label_agreement":null},{"id":"W1964727382","doi":"10.1109/pvsc.2011.6186060","title":"Controlling C&lt;inf&gt;60&lt;/inf&gt; fullerene nanocolumn morphology for organic photovoltaic applications","year":2011,"lang":"en","type":"article","venue":"","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"National Institute for Nanotechnology; University of Alberta","funders":"Alberta Innovates; Canada Research Chairs","keywords":"Materials science; Heterojunction; Indium tin oxide; Organic solar cell; Nanostructure; Substrate (aquarium); Nanotechnology; Exciton; Fullerene; Optoelectronics; Chemical engineering; Thin film; Analytical Chemistry (journal); Organic chemistry; Chemistry; Physics; Composite material; Polymer","score_opus":0.016973482077049493,"score_gpt":0.19790422576244301,"score_spread":0.18093074368539352,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1964727382","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.95882845,0.00084843725,0.027897967,0.0003301136,0.000104967774,0.00007233806,0.0007241195,0.0010957753,0.01009785],"genre_scores_gemma":[0.93719524,0.0007173286,0.056452706,0.00016369292,0.000015534379,0.000104476705,0.0004967795,0.000408359,0.0044458443],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99991524,0.000003079814,0.0000047437834,0.000024663374,0.00003443547,0.000017841374],"domain_scores_gemma":[0.99982315,0.000041903964,0.000046000427,0.00002341156,0.000041920233,0.000023610623],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00009004027,0.00031706624,0.00015578333,0.00015208972,0.00026191125,0.0005406667,0.00027076452,0.00023766542,0.0022027872],"category_scores_gemma":[0.0002544129,0.00017969616,0.00010222945,0.00022371182,0.00019594446,0.00032125824,0.00019983847,0.0003430942,0.00085954694],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000012627149,0.000012448894,0.00013622789,0.000017934583,0.0000013070706,0.000016281852,0.000010427363,0.00026628943,0.99662197,0.00012789703,0.00020316371,0.0025735295],"study_design_scores_gemma":[0.000005382122,0.0000339882,0.00116467,0.0000023597008,0.000003248143,0.000028529015,0.000011771925,0.0028556157,0.99339515,0.00002788912,0.0024665508,0.0000049605414],"about_ca_topic_score_codex":0.0027143813,"about_ca_topic_score_gemma":0.007213058,"teacher_disagreement_score":0.0027143813,"about_ca_system_score_codex":0.00071050314,"about_ca_system_score_gemma":0.0002664451,"threshold_uncertainty_score":0.0073690414},"labels":[],"label_agreement":null},{"id":"W1965206257","doi":"10.1116/1.1691082","title":"Two-dimensional <i>a</i>-Si:H based n-i-p sensor array","year":2004,"lang":"en","type":"article","venue":"Journal of Vacuum Science & Technology A Vacuum Surfaces and Films","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":12,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Fabrication; Materials science; Optoelectronics; Photodiode; Etching (microfabrication); Diode; Lithography; Dry etching; Amorphous silicon; Leakage (economics); Silicon; Nanotechnology; Crystalline silicon; Layer (electronics)","score_opus":0.007418472961875075,"score_gpt":0.21676318008927314,"score_spread":0.20934470712739806,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1965206257","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.773726,0.0013496547,0.21043521,0.00040097514,0.00025401305,0.00018528618,0.0012350215,0.0017864449,0.01062739],"genre_scores_gemma":[0.7895497,0.0006069199,0.20234703,0.00014039394,0.000058884496,0.0001512662,0.00040240842,0.000034701323,0.006708586],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998497,0.00001329528,0.0000069096677,0.000058258996,0.00005985801,0.000011954568],"domain_scores_gemma":[0.99989974,0.00002847635,0.000020413878,0.000014300113,0.00002224241,0.000014849514],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00010221453,0.0002614235,0.0003167487,0.00015038489,0.00019140374,0.00041107048,0.00069145154,0.00045767814,0.0011586121],"category_scores_gemma":[0.00018233286,0.00026333547,0.0001700557,0.0001474994,0.00018851054,0.0004116416,0.00031694837,0.00033196373,0.0004939281],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00004483173,0.000027001548,0.00027319926,0.000061512495,0.000008227879,0.000056962726,0.000012713484,0.00048301954,0.9915481,0.00019821116,0.00025541463,0.0070307124],"study_design_scores_gemma":[0.000011995886,0.00016871195,0.0014734227,0.0000027329238,0.0000129392765,0.00037710392,0.000014759076,0.0068725916,0.98807657,0.0000856962,0.0028864935,0.000017023029],"about_ca_topic_score_codex":0.00027887733,"about_ca_topic_score_gemma":0.00072492665,"teacher_disagreement_score":0.0011586121,"about_ca_system_score_codex":0.00023764253,"about_ca_system_score_gemma":0.00021748552,"threshold_uncertainty_score":0.0038759708},"labels":[],"label_agreement":null},{"id":"W1965671934","doi":"10.1115/imece2014-36941","title":"High Performance Zinc Oxide Thin Film Transistors Through Improved Material Processing and Device Design","year":2014,"lang":"en","type":"article","venue":"Volume 2B: Advanced Manufacturing","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"National Research Council Canada; University of Alberta","funders":"","keywords":"Thin-film transistor; Materials science; Optoelectronics; Schottky barrier; Schottky diode; Transistor; Saturation current; Saturation (graph theory); Fabrication; Electronic engineering; Nanotechnology; Electrical engineering; Voltage; Layer (electronics); Diode","score_opus":0.008139535127293446,"score_gpt":0.18879054040730117,"score_spread":0.18065100528000771,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1965671934","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.45478815,0.017684156,0.4779673,0.0018192786,0.0008987061,0.0005462731,0.0018684773,0.002772171,0.041655462],"genre_scores_gemma":[0.7079235,0.008176572,0.2660378,0.00025361576,0.000144788,0.00035102162,0.0006733364,0.00015828363,0.016281161],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99989307,0.000007776268,0.0000057038255,0.000023882838,0.000055176897,0.000014399768],"domain_scores_gemma":[0.9999521,0.000007566407,0.00001069608,0.000004884783,0.000018351955,0.0000063364378],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00014073406,0.00033980713,0.00036768627,0.00026108898,0.00016986528,0.0006407556,0.0009609295,0.00036655372,0.0014219534],"category_scores_gemma":[0.00014849358,0.00019407469,0.00023806571,0.0003545198,0.00015061666,0.0004757266,0.00014021715,0.00037960615,0.00067167135],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000048134876,0.000030031139,0.00013172635,0.00015060703,0.00001011593,0.00008012322,0.00001481455,0.0012849097,0.9813834,0.0036097667,0.00060928584,0.0126472125],"study_design_scores_gemma":[0.0000853657,0.0002667173,0.0010407547,0.000027204513,0.000051058934,0.00051985035,0.000013067353,0.024064824,0.9315518,0.0013140913,0.04103973,0.000025443655],"about_ca_topic_score_codex":0.00073196465,"about_ca_topic_score_gemma":0.0013104136,"teacher_disagreement_score":0.0014219534,"about_ca_system_score_codex":0.00074334716,"about_ca_system_score_gemma":0.0002908982,"threshold_uncertainty_score":0.005393386},"labels":[],"label_agreement":null},{"id":"W1965690784","doi":"10.1364/oe.22.00a120","title":"Optical absorption enhancement in 3D silicon oxide nano-sandwich type solar cell","year":2013,"lang":"en","type":"article","venue":"Optics Express","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":8,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Toronto Metropolitan University","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Materials science; Silicon; Plasmonic solar cell; Optoelectronics; Solar cell; Substrate (aquarium); Femtosecond; Thin film; Laser; Optics; Quantum dot solar cell; Absorption (acoustics); Crystalline silicon; Nanofiber; Hybrid silicon laser; Silicon oxide; Monocrystalline silicon; Nanotechnology; Composite material; Silicon nitride","score_opus":0.008938307915055855,"score_gpt":0.199760497396735,"score_spread":0.19082218948167914,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1965690784","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99244094,0.00059365906,0.004668488,0.00004645708,0.000034572768,0.000006302579,0.00007277934,0.00013282427,0.0020039186],"genre_scores_gemma":[0.9926071,0.00032072712,0.0058582136,0.000024563496,0.000008167317,0.00001017503,0.000052763728,0.000012624517,0.0011056785],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999527,0.0000026216435,0.0000020809596,0.000011506303,0.000022442517,0.0000087304825],"domain_scores_gemma":[0.99993896,0.000013117793,0.000012522316,0.000006128002,0.000018965326,0.000010316345],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000051040395,0.00015873442,0.00016773956,0.00017265913,0.00014563257,0.00020429623,0.00024531543,0.00024236314,0.000739753],"category_scores_gemma":[0.00007702225,0.00013482913,0.00020315328,0.000106185886,0.000109076915,0.0001760812,0.00015222479,0.00020632567,0.00022446386],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0000074621157,0.00000671487,0.00008372997,0.000019065887,0.0000024013539,0.00003688233,0.000009886479,0.00030185177,0.9986602,0.00007296604,0.000036201993,0.00076268124],"study_design_scores_gemma":[0.0000058113706,0.00006452991,0.0010703278,0.0000033526478,0.00000783541,0.00012225029,0.00002259224,0.006593222,0.9913351,0.000051669485,0.0007177225,0.000005631467],"about_ca_topic_score_codex":0.0005685437,"about_ca_topic_score_gemma":0.0019197325,"teacher_disagreement_score":0.000739753,"about_ca_system_score_codex":0.0002005497,"about_ca_system_score_gemma":0.00010838536,"threshold_uncertainty_score":0.0024747252},"labels":[],"label_agreement":null},{"id":"W1966285565","doi":"10.1049/el.2012.3251","title":"Ultrafast response of SiC and Si nanocomposite material systems","year":2012,"lang":"en","type":"article","venue":"Electronics Letters","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":14,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Okanagan University College; University of British Columbia, Okanagan Campus; University of British Columbia","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Photoexcitation; Materials science; Ultrashort pulse; Charge carrier; Nanocomposite; Semiconductor; Carrier lifetime; Optoelectronics; Silicon; Wide-bandgap semiconductor; Diffusion; Nanotechnology; Atomic physics; Optics; Physics; Laser; Excited state; Thermodynamics","score_opus":0.004043775345008715,"score_gpt":0.17330075262146896,"score_spread":0.16925697727646025,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1966285565","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99427795,0.00034056758,0.0038445292,0.000022652954,0.000010276426,0.00001416283,0.000072063754,0.00009875813,0.001319018],"genre_scores_gemma":[0.9977189,0.0001197605,0.0011198354,0.000011935703,0.0000029581222,0.0000122100955,0.000072832365,0.000016866989,0.0009246761],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99984384,0.0000127807025,0.0000046837486,0.00004288978,0.000061344035,0.00003443997],"domain_scores_gemma":[0.9997415,0.00013182724,0.000032455482,0.000017685956,0.00005552958,0.000021084292],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00018959843,0.00025400257,0.00024383771,0.0002250152,0.00014398254,0.0002501765,0.0002859034,0.00033439047,0.0015909594],"category_scores_gemma":[0.00052002707,0.00013433813,0.00024031568,0.00018252857,0.00023954477,0.00031716572,0.00018595748,0.00042306387,0.00018454634],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0001456451,0.000021036403,0.0003533293,0.000056351448,0.000012018024,0.000053518095,0.00007075723,0.002362993,0.99418867,0.00012686152,0.000050443887,0.0025584341],"study_design_scores_gemma":[0.0000074725053,0.00030496807,0.0034399594,0.0000055507535,0.000014493624,0.000079686804,0.000051363484,0.0412012,0.95415854,0.000085168314,0.0006398568,0.000011662535],"about_ca_topic_score_codex":0.0009252685,"about_ca_topic_score_gemma":0.00074292865,"teacher_disagreement_score":0.0015909594,"about_ca_system_score_codex":0.00059268426,"about_ca_system_score_gemma":0.0001282666,"threshold_uncertainty_score":0.005322337},"labels":[],"label_agreement":null},{"id":"W1966928489","doi":"10.1116/1.2194027","title":"High-performance n-channel 13.56MHz plasma-enhanced chemical vapor deposition nanocrystalline silicon thin-film transistors","year":2006,"lang":"en","type":"article","venue":"Journal of Vacuum Science & Technology A Vacuum Surfaces and Films","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":12,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Materials science; Thin-film transistor; Nanocrystalline silicon; Chemical vapor deposition; Thin film; Plasma-enhanced chemical vapor deposition; Silicon; Substrate (aquarium); Amorphous silicon; Analytical Chemistry (journal); Optoelectronics; Silane; Gate dielectric; Amorphous solid; Subthreshold slope; Threshold voltage; Nanocrystalline material; Nanotechnology; Transistor; Layer (electronics); Crystalline silicon; Chemistry; Electrical engineering; Crystallography; Voltage; Composite material","score_opus":0.004567307393321563,"score_gpt":0.1835464456939231,"score_spread":0.17897913830060153,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1966928489","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.985494,0.0008545677,0.007960599,0.00007676373,0.00004325337,0.000036640216,0.000492059,0.00029575967,0.004746256],"genre_scores_gemma":[0.98696285,0.00033411483,0.009763768,0.000022155667,0.000014416033,0.00002325728,0.00018409862,0.000019844083,0.002675423],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99991834,0.0000035991677,0.0000032922694,0.000020052716,0.000037149217,0.000017498629],"domain_scores_gemma":[0.9999162,0.000025812753,0.000011908721,0.000009326195,0.000025535976,0.0000112880325],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00008296563,0.0001248656,0.0002260851,0.00008913557,0.00012711005,0.00018149959,0.00035503542,0.00015121156,0.0010222426],"category_scores_gemma":[0.00014207796,0.00008691878,0.00009804778,0.00014949618,0.00011441091,0.00019486944,0.0000912791,0.00014966419,0.0002472937],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000033864842,0.0000061212017,0.00022032083,0.000019759687,0.0000032350274,0.00004830791,0.000013641071,0.00015981728,0.9974757,0.00008231217,0.00017209028,0.0017648658],"study_design_scores_gemma":[0.000021686506,0.000100557314,0.003158058,0.0000027899493,0.000010585248,0.00017540435,0.000014037332,0.0048609236,0.98983043,0.000051002942,0.0017695042,0.000005021899],"about_ca_topic_score_codex":0.002495441,"about_ca_topic_score_gemma":0.007528599,"teacher_disagreement_score":0.002495441,"about_ca_system_score_codex":0.0005736131,"about_ca_system_score_gemma":0.00021038418,"threshold_uncertainty_score":0.004961908},"labels":[],"label_agreement":null},{"id":"W1967447293","doi":"10.1016/j.nimb.2006.04.018","title":"Stress and stress relief in dielectric thin films – the role of hydrogen","year":2006,"lang":"en","type":"article","venue":"Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":10,"is_retracted":false,"has_abstract":false,"route_ca_aff":false,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"","funders":"Australian Research Council; Ontario Ministry of Natural Resources and Forestry","keywords":"Materials science; Annealing (glass); Ultimate tensile strength; Silicon; Composite material; Amorphous solid; Stress (linguistics); Hydrogen; Thin film; Substrate (aquarium); Metallurgy; Crystallography; Nanotechnology; Chemistry","score_opus":0.016620033403258308,"score_gpt":0.3140613721111052,"score_spread":0.2974413387078469,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1967447293","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.96939296,0.011912466,0.0036917336,0.00088346534,0.00024672787,0.000017655417,0.000064441854,0.000084230094,0.013706301],"genre_scores_gemma":[0.99308807,0.0028878464,0.00058349984,0.000086758795,0.00008052256,0.000005704964,0.000045605317,0.000025429705,0.0031966537],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999355,0.000006327861,0.0000029038217,0.0000100420175,0.000024940042,0.000020300857],"domain_scores_gemma":[0.99990773,0.000020974818,0.000023025346,0.0000144495025,0.000016352582,0.000017517912],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00012597363,0.00020000545,0.00018541234,0.00014355386,0.000267467,0.0006392243,0.00046189132,0.0003713502,0.0019606862],"category_scores_gemma":[0.0002174961,0.00018351508,0.00009256966,0.00012031911,0.0007792818,0.0008039093,0.00032709623,0.0003985773,0.00033108413],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00033998178,0.000087977794,0.0006173666,0.00022859826,0.000029339428,0.00048337973,0.0002562651,0.001890241,0.9642442,0.011366453,0.00088659616,0.019569714],"study_design_scores_gemma":[0.00014557021,0.0012010507,0.0124626085,0.000060650586,0.000042329706,0.0012168039,0.0009173174,0.01915744,0.9213796,0.023056123,0.020287896,0.00007263329],"about_ca_topic_score_codex":0.00018829586,"about_ca_topic_score_gemma":0.00016914023,"teacher_disagreement_score":0.0019606862,"about_ca_system_score_codex":0.00011416178,"about_ca_system_score_gemma":0.00008833484,"threshold_uncertainty_score":0.006559193},"labels":[],"label_agreement":null},{"id":"W1967792542","doi":"10.1063/1.1993766","title":"Threshold voltage instability of amorphous silicon thin-film transistors under constant current stress","year":2005,"lang":"en","type":"article","venue":"Applied Physics Letters","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":79,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Materials science; Threshold voltage; Condensed matter physics; Silicon; Amorphous solid; Amorphous silicon; Stress (linguistics); Transistor; Thin-film transistor; Optoelectronics; Thin film; Voltage; Wide-bandgap semiconductor; Power law; Electron mobility; Electrical engineering; Nanotechnology; Chemistry; Physics; Crystallography; Crystalline silicon","score_opus":0.013000942588924919,"score_gpt":0.20645841688396707,"score_spread":0.19345747429504215,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1967792542","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99882907,0.00023397061,0.0004948899,0.000027963213,0.000008844286,0.000004616771,0.00008309622,0.00002947997,0.00028809934],"genre_scores_gemma":[0.99946386,0.00012023671,0.00018135355,0.000007005367,0.000006536567,0.0000037071698,0.00004548004,0.000004718361,0.00016706625],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99991655,0.000004959327,0.0000062614026,0.000019774388,0.00003209088,0.000020324745],"domain_scores_gemma":[0.99961543,0.00012008236,0.0001242616,0.000027971835,0.00006838036,0.000043764052],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00008153246,0.00021574854,0.00018491058,0.0002972222,0.00013526774,0.00025034903,0.00019615103,0.00024527757,0.00087193254],"category_scores_gemma":[0.0005236387,0.00008010274,0.00012417905,0.00025938766,0.00027116187,0.00026219458,0.000114403716,0.00026615668,0.0001255836],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0000909501,0.000017547005,0.0011972114,0.000026530637,0.00000806894,0.00018103153,0.00009070618,0.00057608756,0.9957644,0.000084278894,0.000031981308,0.0019313097],"study_design_scores_gemma":[0.000020501666,0.0006928289,0.021630496,0.000016224292,0.000027338954,0.0004094784,0.000121311656,0.020438816,0.95593494,0.00026219865,0.00042806982,0.00001782619],"about_ca_topic_score_codex":0.00072072813,"about_ca_topic_score_gemma":0.0006235636,"teacher_disagreement_score":0.00087193254,"about_ca_system_score_codex":0.00024857992,"about_ca_system_score_gemma":0.0001225142,"threshold_uncertainty_score":0.0029168725},"labels":[],"label_agreement":null},{"id":"W1968290851","doi":"10.1063/1.4854595","title":"Effective interface state effects in hydrogenated amorphous-crystalline silicon heterostructures using ultraviolet laser photocarrier radiometry","year":2013,"lang":"en","type":"article","venue":"Journal of Applied Physics","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":15,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Toronto","funders":"","keywords":"Materials science; Heterojunction; Photoconductivity; Optoelectronics; Photoluminescence; Substrate (aquarium); Silicon; Ultraviolet; Amorphous solid; Amorphous silicon; Laser; Thin film; Crystalline silicon; Optics; Nanotechnology; Crystallography; Chemistry","score_opus":0.00415283029896913,"score_gpt":0.20173428962848827,"score_spread":0.19758145932951915,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1968290851","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9940293,0.00050263637,0.00498873,0.000010760771,0.000004682196,0.000006326618,0.000054578948,0.000053133375,0.00034988808],"genre_scores_gemma":[0.99743867,0.00025204633,0.002065259,0.0000057253633,0.0000014401504,0.000005097126,0.000039556504,0.0000071391305,0.00018506576],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99985135,0.000028378921,0.000008792487,0.000033632674,0.00006257869,0.000015183769],"domain_scores_gemma":[0.9997751,0.00012396184,0.000040053532,0.000018291925,0.000033962144,0.000008580802],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00036098438,0.00026316557,0.00014206237,0.00025694616,0.00010086778,0.00042211654,0.00037448242,0.00024346395,0.00036753964],"category_scores_gemma":[0.0003968974,0.00017184087,0.00019276123,0.00017304232,0.00029260997,0.00038268915,0.00017848323,0.0002276286,0.00008588224],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000041217103,0.000015392823,0.00093422446,0.000038822414,0.000012495338,0.000051394625,0.000048815946,0.0013400455,0.9954087,0.00026136436,0.000015264299,0.0018322986],"study_design_scores_gemma":[0.0000061766837,0.000115967174,0.0023296617,0.000004822183,0.000015351883,0.00005161194,0.000032108193,0.018871147,0.97831464,0.00010188385,0.000149717,0.000006801529],"about_ca_topic_score_codex":0.0009261611,"about_ca_topic_score_gemma":0.0011754485,"teacher_disagreement_score":0.0009261611,"about_ca_system_score_codex":0.00047205685,"about_ca_system_score_gemma":0.00014030622,"threshold_uncertainty_score":0.003425002},"labels":[],"label_agreement":null},{"id":"W1968361063","doi":"10.1063/1.1779946","title":"Thin-film tunneling transistors on flexible plastic substrates based on stress-assisted lateral growth of polycrystalline germanium","year":2004,"lang":"en","type":"article","venue":"Applied Physics Letters","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":44,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Acadia University","funders":"","keywords":"Germanium; Materials science; Annealing (glass); Optoelectronics; Transistor; Quantum tunnelling; Thin-film transistor; Crystallite; Stress (linguistics); Nanotechnology; Silicon; Composite material; Electrical engineering; Metallurgy; Layer (electronics); Voltage","score_opus":0.01013502736952035,"score_gpt":0.1888031235653631,"score_spread":0.17866809619584276,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1968361063","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99642605,0.00024181521,0.0021370717,0.000024064206,0.000018346582,0.000013147196,0.000101525235,0.00005523317,0.0009827671],"genre_scores_gemma":[0.9952356,0.0002741562,0.0033099807,0.000011603129,0.0000048409606,0.000013982837,0.00010252111,0.000011447285,0.0010358809],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99993956,0.00000422144,0.0000044322114,0.000012417067,0.000025363326,0.000013998279],"domain_scores_gemma":[0.9998845,0.000026869744,0.000036153124,0.000019226743,0.000015059127,0.000018268734],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000063470055,0.00029587248,0.00014550306,0.00013416915,0.00011182464,0.00020188194,0.00032085084,0.00017902047,0.0005613099],"category_scores_gemma":[0.00016328353,0.00012632128,0.0001300864,0.0001601237,0.00015670269,0.00021382453,0.00022959818,0.00018248367,0.00016499212],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000019457908,0.000004563395,0.00010906776,0.000019140572,0.0000029558958,0.000092518014,0.000010428804,0.00012135635,0.9986808,0.00007529391,0.000020749136,0.0008436833],"study_design_scores_gemma":[0.000012044144,0.00013666826,0.0021750699,0.0000054927027,0.000009981366,0.0002441059,0.000015531306,0.0022427307,0.99430853,0.00005045021,0.0007930463,0.000006296333],"about_ca_topic_score_codex":0.00039900956,"about_ca_topic_score_gemma":0.001101162,"teacher_disagreement_score":0.0005613099,"about_ca_system_score_codex":0.00016667359,"about_ca_system_score_gemma":0.00008870144,"threshold_uncertainty_score":0.0018777251},"labels":[],"label_agreement":null},{"id":"W1968398895","doi":"10.1557/proc-814-i6.13","title":"Mechanically strained a-Si:H AMOLED driver circuits","year":2004,"lang":"en","type":"article","venue":"MRS Proceedings","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":4,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"AMOLED; Materials science; Thin-film transistor; Optoelectronics; OLED; Electronic circuit; Transistor; Active matrix; Diode; Substrate (aquarium); Voltage; Composite material; Electrical engineering","score_opus":0.00876028393921624,"score_gpt":0.1865300463706417,"score_spread":0.17776976243142545,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1968398895","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9810786,0.00024266854,0.0075078383,0.00030797737,0.00028176553,0.000035615085,0.000231174,0.00032278555,0.009991419],"genre_scores_gemma":[0.988536,0.00007085637,0.0034508703,0.0000704635,0.000025657386,0.000017016559,0.00008441617,0.00004136604,0.0077032084],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998752,0.0000065662357,0.0000054104507,0.000030586383,0.000054610427,0.000027734906],"domain_scores_gemma":[0.99985147,0.00001745303,0.000045687422,0.000027394173,0.000033737175,0.000024341285],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00009010657,0.00028335472,0.00016412207,0.00014494086,0.00029345677,0.00048573306,0.00081707357,0.00047155807,0.0035641093],"category_scores_gemma":[0.00023085004,0.0002012431,0.00010001134,0.00010825334,0.0003684347,0.0004521087,0.0003875406,0.00039757186,0.0008496516],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00008560266,0.000025919293,0.00026526395,0.00003749077,0.000010377079,0.000099667996,0.00006425771,0.00041556836,0.99429154,0.0011503448,0.00063721125,0.0029167675],"study_design_scores_gemma":[0.00003899429,0.0003609908,0.002578992,0.000008087617,0.00001257794,0.00017273135,0.000103364844,0.0069331517,0.98293686,0.00039811176,0.006437232,0.000018906338],"about_ca_topic_score_codex":0.0005329766,"about_ca_topic_score_gemma":0.0020910634,"teacher_disagreement_score":0.0035641093,"about_ca_system_score_codex":0.0005299604,"about_ca_system_score_gemma":0.00022415034,"threshold_uncertainty_score":0.011923194},"labels":[],"label_agreement":null},{"id":"W1968794210","doi":"10.1063/1.2887882","title":"Leakage current mechanisms in top-gate nanocrystalline silicon thin film transistors","year":2008,"lang":"en","type":"article","venue":"Applied Physics Letters","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":14,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Materials science; Ohmic contact; Silicon; Optoelectronics; Leakage (economics); Thermal conduction; Transistor; Nanocrystalline material; Poole–Frenkel effect; Thin-film transistor; Grain boundary; Depletion region; Condensed matter physics; Electrical engineering; Nanotechnology; Layer (electronics); Semiconductor; Metallurgy; Microstructure; Voltage; Dielectric; Physics; Composite material","score_opus":0.011568797007916666,"score_gpt":0.1882610523791139,"score_spread":0.17669225537119723,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1968794210","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99331105,0.0028733194,0.0024694523,0.000077752906,0.000019939596,0.000020774633,0.00019775097,0.000107172404,0.0009228078],"genre_scores_gemma":[0.99792624,0.0007719925,0.0006738773,0.000023335964,0.0000073943993,0.000013698674,0.00011810139,0.000013574142,0.00045186447],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99983585,0.000007840315,0.000013135292,0.0000384604,0.0000664348,0.000038321643],"domain_scores_gemma":[0.9997477,0.00006203643,0.000073666924,0.00002926428,0.00006440282,0.000022978407],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0001839713,0.00032267114,0.00045405247,0.0003386535,0.00027023844,0.0004623122,0.00076930027,0.00035278365,0.00056480843],"category_scores_gemma":[0.00035467517,0.0002398757,0.00026329455,0.0002635927,0.0004909638,0.0007898784,0.00027563155,0.00033072513,0.00016304752],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00018665825,0.000022877057,0.0012645827,0.00018946537,0.000029669609,0.0004989899,0.00014996696,0.0012999277,0.9929328,0.00047613127,0.00011793514,0.002830955],"study_design_scores_gemma":[0.000033508746,0.00025906853,0.0076673217,0.000028848466,0.00006699785,0.00060308987,0.000104410945,0.015383171,0.97409195,0.0006889969,0.0010502778,0.000022267208],"about_ca_topic_score_codex":0.0025706945,"about_ca_topic_score_gemma":0.0020078812,"teacher_disagreement_score":0.0025706945,"about_ca_system_score_codex":0.0011526187,"about_ca_system_score_gemma":0.00027782057,"threshold_uncertainty_score":0.008362889},"labels":[],"label_agreement":null},{"id":"W1969297479","doi":"10.1117/12.2038649","title":"Silicon solar cell enhancement by plasmonic silver nanocubes","year":2014,"lang":"en","type":"article","venue":"Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":3,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Carleton University","funders":"","keywords":"Materials science; Silicon; Solar cell; Absorption (acoustics); Layer (electronics); Fabrication; Optoelectronics; Nanoparticle; Particle (ecology); Plasmonic solar cell; Nanotechnology; Substrate (aquarium); Quantum dot solar cell; Solar cell efficiency; Range (aeronautics); Monocrystalline silicon; Composite material","score_opus":0.006134856726498503,"score_gpt":0.19198354986310023,"score_spread":0.18584869313660174,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1969297479","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.98552126,0.00012770007,0.007752951,0.000058279704,0.000010113199,0.0000105362615,0.0000744853,0.00013893355,0.006305849],"genre_scores_gemma":[0.99239445,0.00011502701,0.00645516,0.000020618703,0.0000024623416,0.00001281835,0.00004237394,0.000025243296,0.000931865],"study_design_codex":"simulation_or_modeling","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999106,0.000009004842,0.0000027973917,0.000012928102,0.000047941787,0.00001683077],"domain_scores_gemma":[0.9998832,0.000050208462,0.000023739702,0.000010504152,0.00002525984,0.000007142404],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00012461664,0.00021443357,0.00040839723,0.00012590387,0.0001990134,0.0003768264,0.00032623045,0.00028770068,0.00095729204],"category_scores_gemma":[0.0003241094,0.0001765218,0.00034638782,0.00019386053,0.00021208121,0.00023254998,0.00019794567,0.00017999882,0.00017050334],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00014632351,0.0001246907,0.0022625925,0.0001309793,0.0000466773,0.00018072831,0.00007718498,0.6504974,0.3377226,0.0014416546,0.00024503595,0.007124179],"study_design_scores_gemma":[0.000053636755,0.00016254446,0.0014378958,0.0000064601936,0.000027390925,0.00004761025,0.0000363916,0.8574597,0.13959822,0.00024748154,0.0009100109,0.000012701256],"about_ca_topic_score_codex":0.0031441285,"about_ca_topic_score_gemma":0.0032307429,"teacher_disagreement_score":0.0031441285,"about_ca_system_score_codex":0.00074079185,"about_ca_system_score_gemma":0.0003452198,"threshold_uncertainty_score":0.006251633},"labels":[],"label_agreement":null},{"id":"W1969311468","doi":"10.1063/1.2113415","title":"X-ray photoelectron spectroscopy and structural analysis of amorphous SiOxNy films deposited at low temperatures","year":2005,"lang":"en","type":"article","venue":"Journal of Applied Physics","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":12,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Polytechnique Montréal; Regroupement Québécois sur les Matériaux de Pointe","funders":"Natural Sciences and Engineering Research Council of Canada; Fonds Québécois de la Recherche sur la Nature et les Technologies","keywords":"X-ray photoelectron spectroscopy; Dangling bond; Silicon oxynitride; Analytical Chemistry (journal); Amorphous solid; Silicon; Materials science; Chemical vapor deposition; Chemistry; Crystallography; Silicon nitride; Nuclear magnetic resonance; Nanotechnology","score_opus":0.0032878754583951053,"score_gpt":0.19311095255894625,"score_spread":0.18982307710055116,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1969311468","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99903274,0.000106080864,0.00041260314,0.0000057180373,0.0000015042001,0.000003396388,0.00011021054,0.000009922553,0.00031777844],"genre_scores_gemma":[0.99809366,0.00015373356,0.00095051556,0.000005187073,0.0000019035535,0.000008702351,0.00021803795,0.000007151808,0.00056117226],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999528,0.0000031726522,0.0000031145887,0.000013671348,0.000017240325,0.000009994953],"domain_scores_gemma":[0.9999521,0.000011478184,0.0000139889125,0.0000064408337,0.000010045853,0.0000060267153],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000057441746,0.00021972113,0.00011914145,0.00018537029,0.0001541479,0.00017339709,0.00018211742,0.00016471435,0.00095155236],"category_scores_gemma":[0.00010387808,0.00010989889,0.0001052864,0.0001705448,0.00014525451,0.00012681089,0.00009487427,0.0001672684,0.00011105093],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00002943089,0.000005359963,0.00054377,0.000021028254,0.0000027105316,0.000026834598,0.000022333648,0.0001470791,0.9988194,0.000029827523,0.000008128698,0.0003440534],"study_design_scores_gemma":[0.000007952016,0.00023995737,0.028096471,0.000008048315,0.000015357029,0.00011448648,0.00009198905,0.0032776804,0.96745414,0.000047479698,0.0006418161,0.0000045654747],"about_ca_topic_score_codex":0.0009318161,"about_ca_topic_score_gemma":0.00095641194,"teacher_disagreement_score":0.00095155236,"about_ca_system_score_codex":0.00016873029,"about_ca_system_score_gemma":0.00007559394,"threshold_uncertainty_score":0.0031833053},"labels":[],"label_agreement":null},{"id":"W1970290016","doi":"10.1364/oe.18.004478","title":"Photonic crystal intermediate reflectors for micromorph solar cells: a comparative study","year":2010,"lang":"en","type":"article","venue":"Optics Express","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":41,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Toronto","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Distributed Bragg reflector; Optics; Reflector (photography); Materials science; Optoelectronics; Photonic crystal; Bragg's law; Silicon; Absorption (acoustics); Diffraction; Physics","score_opus":0.021087215389425887,"score_gpt":0.25799342459351815,"score_spread":0.23690620920409228,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1970290016","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9877809,0.0012675213,0.005069137,0.000043972006,0.000023294724,0.00002478077,0.00013196452,0.000065874534,0.0055924593],"genre_scores_gemma":[0.9864096,0.0006224263,0.010303128,0.000014486459,0.000008388565,0.0000104718465,0.00011597753,0.000012947861,0.002502555],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99982613,0.000010169912,0.0000063105963,0.000027517432,0.00010156387,0.000028341801],"domain_scores_gemma":[0.9998436,0.000047656915,0.000038865885,0.000019013009,0.000035373214,0.000015485011],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00013428307,0.0001653777,0.00020195836,0.00019993301,0.00016378282,0.0005504794,0.0003505096,0.00018560886,0.0015149927],"category_scores_gemma":[0.00024356192,0.000092666465,0.00021875894,0.00023904123,0.00011834646,0.00041089754,0.00016090505,0.00023644287,0.00022095854],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00014044768,0.000057745634,0.00084538665,0.00010905891,0.000011735083,0.00008254005,0.00002619921,0.0012562849,0.9856807,0.0007459159,0.00009779521,0.0109462375],"study_design_scores_gemma":[0.000022991326,0.00073076907,0.0056560785,0.000007616549,0.000027855478,0.00036806316,0.00007537566,0.0069342637,0.98191386,0.000119487995,0.0041341526,0.000009514234],"about_ca_topic_score_codex":0.0009393007,"about_ca_topic_score_gemma":0.0020838086,"teacher_disagreement_score":0.0015149927,"about_ca_system_score_codex":0.00034052753,"about_ca_system_score_gemma":0.00016281448,"threshold_uncertainty_score":0.005068183},"labels":[],"label_agreement":null},{"id":"W1970719417","doi":"10.1139/cjp-2013-0574","title":"A method to evaluate explosive crystallization velocity of amorphous silicon films during flash lamp annealing","year":2014,"lang":"en","type":"article","venue":"Canadian Journal of Physics","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":11,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":false,"route_ca_venue":true,"route_about_ca":false,"ca_institutions":"","funders":"","keywords":"Crystallization; Flash-lamp; Amorphous silicon; Physics; Millisecond; Explosive material; Amorphous solid; Annealing (glass); Silicon; Optoelectronics; Optics; Atomic physics; Crystalline silicon; Crystallography; Thermodynamics; Chemistry","score_opus":0.014778032148948596,"score_gpt":0.2250138971807062,"score_spread":0.2102358650317576,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1970719417","genre_codex":"empirical","genre_gemma":"methods","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"methods","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9506138,0.0018689831,0.043943543,0.000039148243,0.000039119954,0.00015002892,0.00038612145,0.0003469889,0.002612245],"genre_scores_gemma":[0.9664343,0.001069672,0.030141478,0.000024253819,0.000008764295,0.00021064297,0.00025944394,0.00004298877,0.0018084369],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99982786,0.000016888705,0.000012957544,0.000038236492,0.00008178852,0.000022172911],"domain_scores_gemma":[0.99973875,0.00008906031,0.00005116704,0.000024478977,0.00007516478,0.000021333906],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00021537674,0.00031445327,0.00014757988,0.0006389898,0.0002482495,0.00023443156,0.00022592672,0.0003110654,0.0008175611],"category_scores_gemma":[0.00040609416,0.0001906355,0.00012851367,0.00042319336,0.0001907806,0.0002394475,0.0001682395,0.00041936158,0.00014258949],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000028673712,0.000014869046,0.00078508677,0.000034905304,0.0000037517577,0.000022932254,0.000060001166,0.00010770443,0.9950799,0.00008188378,0.000023202836,0.0037569874],"study_design_scores_gemma":[0.0000035296646,0.00015848342,0.005401438,0.0000054654074,0.000011090109,0.00006862834,0.00003670955,0.002532475,0.9912356,0.000029789971,0.0005094845,0.000007331149],"about_ca_topic_score_codex":0.0017948041,"about_ca_topic_score_gemma":0.0014774385,"teacher_disagreement_score":0.0017948041,"about_ca_system_score_codex":0.000340254,"about_ca_system_score_gemma":0.00025053121,"threshold_uncertainty_score":0.003568709},"labels":[],"label_agreement":null},{"id":"W1971151446","doi":"10.1007/s10854-005-6598-1","title":"An analysis of the distributions of electronic states associated with hydrogenated amorphous silicon","year":2005,"lang":"en","type":"article","venue":"Journal of Materials Science Materials in Electronics","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":14,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Regina","funders":"","keywords":"Amorphous silicon; Silicon; Square root; Amorphous solid; Materials science; Density of states; Band gap; Root mean square; Valence (chemistry); Conduction band; Condensed matter physics; Molecular physics; Crystalline silicon; Crystallography; Physics; Chemistry; Mathematics; Electron; Optoelectronics; Quantum mechanics; Geometry","score_opus":0.0038544615615976,"score_gpt":0.20970350247992944,"score_spread":0.20584904091833184,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1971151446","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.98768836,0.00022321241,0.008764334,0.00004564452,0.000006357923,0.0000070828664,0.00017097945,0.00005708657,0.0030370555],"genre_scores_gemma":[0.9985195,0.0000754085,0.0007717026,0.0000052419105,0.0000034647205,0.0000039802126,0.00014695407,0.000009946695,0.00046373525],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99995935,0.000006954841,0.0000016367774,0.000009082638,0.000012105871,0.00001078122],"domain_scores_gemma":[0.9996933,0.00019112392,0.000030862524,0.000023749411,0.000043269603,0.00001779811],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00017588372,0.00013763666,0.00013173725,0.0006284907,0.0002433145,0.0003631157,0.00028778627,0.00018813794,0.0026990203],"category_scores_gemma":[0.00045507876,0.00012087281,0.0001838191,0.0005461049,0.00031782012,0.00028409535,0.00016840624,0.00019164626,0.000121469944],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.002076091,0.00027824505,0.034141917,0.00032205656,0.00024279267,0.0009957424,0.000400152,0.14097296,0.71650875,0.0641658,0.0014670744,0.03842842],"study_design_scores_gemma":[0.000055290246,0.0002675377,0.0669224,0.000020486697,0.00007951771,0.0003652476,0.00024598307,0.77694595,0.14287329,0.010385239,0.0018001647,0.000038892755],"about_ca_topic_score_codex":0.0006824252,"about_ca_topic_score_gemma":0.0009276505,"teacher_disagreement_score":0.0026990203,"about_ca_system_score_codex":0.00029537643,"about_ca_system_score_gemma":0.00011711819,"threshold_uncertainty_score":0.00902909},"labels":[],"label_agreement":null},{"id":"W1971483174","doi":"10.1007/s10854-008-9825-8","title":"A quantitative characterization of the optical absorption spectrum associated with hydrogenated amorphous silicon","year":2008,"lang":"en","type":"article","venue":"Journal of Materials Science Materials in Electronics","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":11,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Windsor; University of Regina","funders":"Natural Sciences and Engineering Research Council of Canada; CMC Microsystems","keywords":"Amorphous silicon; Amorphous solid; Materials science; Absorption (acoustics); Absorption spectroscopy; Silicon; Nanocrystalline silicon; Optics; Analytical Chemistry (journal); Optoelectronics; Crystalline silicon; Chemistry; Physics; Crystallography","score_opus":0.010201869130911015,"score_gpt":0.2052508585793879,"score_spread":0.1950489894484769,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1971483174","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.98793614,0.0005481976,0.0085295215,0.000029903224,0.000014580563,0.000018629733,0.0003437161,0.00007684572,0.0025025501],"genre_scores_gemma":[0.99578094,0.00020367873,0.002826233,0.0000149314055,0.00000852408,0.000013925897,0.00022571835,0.000011270677,0.00091476203],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999198,0.000010312605,0.0000023745404,0.000019504487,0.00003667996,0.000011302162],"domain_scores_gemma":[0.99978215,0.000102170256,0.00002761741,0.000029401863,0.000040995685,0.000017598193],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00012389933,0.00017620364,0.0000926177,0.00045176383,0.00017463756,0.00024634087,0.00030091888,0.00025944726,0.0013850881],"category_scores_gemma":[0.0001936523,0.00013259714,0.000118097116,0.00025880837,0.00031653378,0.00021403667,0.00014919128,0.0002641872,0.00018320649],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000046695484,0.000013866661,0.00045810288,0.000014512941,0.0000043057275,0.000019327985,0.000010554815,0.00008577694,0.9978011,0.00012934429,0.000021311209,0.0013950291],"study_design_scores_gemma":[0.000007130413,0.00013012621,0.010433384,0.0000029895978,0.000010438742,0.00009385922,0.00003279089,0.0030589025,0.9855745,0.000080679085,0.0005703389,0.000004827049],"about_ca_topic_score_codex":0.00041269427,"about_ca_topic_score_gemma":0.0005993356,"teacher_disagreement_score":0.0013850881,"about_ca_system_score_codex":0.00014693174,"about_ca_system_score_gemma":0.00011126208,"threshold_uncertainty_score":0.0046336055},"labels":[],"label_agreement":null},{"id":"W1971605178","doi":"10.1117/12.812282","title":"Characterization of bias induced metastability of amorphous silicon thin film transistor based passive pixel sensor switch and its impact on biomedical x-ray imaging application","year":2009,"lang":"en","type":"article","venue":"Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":2,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Lakehead University; Thunder Bay Regional Research Institute; University of Waterloo","funders":"","keywords":"Thin-film transistor; Active matrix; Materials science; Transistor; Metastability; Amorphous silicon; Amorphous solid; Optoelectronics; Biasing; Threshold voltage; Image sensor; Flat panel detector; Silicon; Optics; Physics; Voltage; Detector; Crystalline silicon; Nanotechnology; Chemistry; Crystallography","score_opus":0.010989914437507962,"score_gpt":0.225573307708714,"score_spread":0.21458339327120604,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1971605178","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9957943,0.00081686344,0.0025905336,0.000044136083,0.000017454802,0.000009644588,0.00021846914,0.00005530644,0.0004533657],"genre_scores_gemma":[0.9983785,0.0002760552,0.0007986672,0.000015537547,0.000005587652,0.000010998518,0.00012288603,0.000010222779,0.00038161685],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999056,0.000006500848,0.000005808591,0.00003450029,0.00003404064,0.0000134467755],"domain_scores_gemma":[0.9997236,0.00009111427,0.000068988775,0.00002307276,0.00007721183,0.000015932346],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0001301992,0.00017426712,0.00016330626,0.00014147704,0.00012244226,0.0001815839,0.00024323518,0.00027533318,0.00075672846],"category_scores_gemma":[0.0004878278,0.00008733078,0.0001318628,0.00016344787,0.00019316158,0.00026390777,0.00008963642,0.00020142777,0.00012956027],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000060415423,0.000009632345,0.0019073253,0.00004632516,0.000007055761,0.0001241524,0.0000555903,0.000534217,0.99476165,0.00006338236,0.000056360324,0.002374064],"study_design_scores_gemma":[0.000004447024,0.0004266656,0.03033278,0.000008850071,0.000020237007,0.00035127663,0.00012440063,0.013971601,0.9537874,0.0000877408,0.0008726606,0.000012019245],"about_ca_topic_score_codex":0.00073893607,"about_ca_topic_score_gemma":0.00082500157,"teacher_disagreement_score":0.00075672846,"about_ca_system_score_codex":0.0002635291,"about_ca_system_score_gemma":0.00008948995,"threshold_uncertainty_score":0.0025315285},"labels":[],"label_agreement":null},{"id":"W1971702506","doi":"10.1145/2228360.2228396","title":"Generic low-cost characterization of V <sub>th</sub> and mobility variations in LTPS TFTs for non-uniformity calibration of active-matrix OLED displays","year":2012,"lang":"en","type":"article","venue":"","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":2,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"IGNIS Innovation (Canada)","funders":"","keywords":"OLED; Active matrix; Calibration; Characterization (materials science); Materials science; Thin-film transistor; Matrix (chemical analysis); Optoelectronics; Computer science; Composite material; Physics; Nanotechnology","score_opus":0.009311059233545502,"score_gpt":0.21663168268648342,"score_spread":0.20732062345293792,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1971702506","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.39663336,0.00035116362,0.5989859,0.00009601771,0.00003548098,0.0001008659,0.00032231622,0.0017349245,0.001740101],"genre_scores_gemma":[0.8872198,0.00019270238,0.11166272,0.000019160061,0.000013937405,0.000060848397,0.00014113798,0.000087303815,0.0006023004],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99983835,0.000029448276,0.0000070371652,0.000036027588,0.0000753193,0.000013769378],"domain_scores_gemma":[0.99970835,0.000086355714,0.00005242271,0.000054944398,0.000088253044,0.00000955051],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00016778531,0.00035298758,0.00022415591,0.00032395122,0.00021976241,0.00028264752,0.0003460896,0.00028815417,0.0008961949],"category_scores_gemma":[0.00062375644,0.0001171488,0.00016853958,0.00028469946,0.00022802156,0.00034401126,0.00020618172,0.0002495364,0.00025866652],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00006357251,0.000021462218,0.001257747,0.000066911285,0.000009629606,0.000049884547,0.00005782709,0.0024567267,0.9508752,0.0005297873,0.00019000832,0.04442115],"study_design_scores_gemma":[0.0000042209535,0.000115847644,0.00482702,0.000004279866,0.000011041409,0.00021021377,0.00003970367,0.039401002,0.9541091,0.00023504553,0.0010308067,0.000011723127],"about_ca_topic_score_codex":0.0004224483,"about_ca_topic_score_gemma":0.0007170793,"teacher_disagreement_score":0.0008961949,"about_ca_system_score_codex":0.0002367621,"about_ca_system_score_gemma":0.0001582961,"threshold_uncertainty_score":0.002998054},"labels":[],"label_agreement":null},{"id":"W1972013794","doi":"10.1063/1.3422479","title":"Phototransistor with nanocrystalline Si/amorphous Si bilayer channel","year":2010,"lang":"en","type":"article","venue":"Applied Physics Letters","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":11,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Materials science; Optoelectronics; Photoconductivity; Photodiode; Amorphous silicon; Nanocrystalline silicon; Chemical vapor deposition; Responsivity; Photoresistor; Biasing; Nanocrystalline material; Silicon; Bilayer; Crystalline silicon; Photodetector; Nanotechnology; Voltage; Chemistry","score_opus":0.00577135989221654,"score_gpt":0.16387062566934574,"score_spread":0.1580992657771292,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1972013794","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9945868,0.00046236016,0.0033219082,0.00011847921,0.00003577607,0.000022480433,0.00024722287,0.00027266945,0.00093223026],"genre_scores_gemma":[0.99676645,0.0002211277,0.0023334234,0.000018340621,0.000012880643,0.00001164655,0.000085454594,0.000013532284,0.00053720654],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99994016,0.0000033721462,0.000004469887,0.000016696049,0.000016400778,0.000018964482],"domain_scores_gemma":[0.9998667,0.000030855837,0.000029279154,0.000018690896,0.000027553424,0.000026833442],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00005901424,0.00013207473,0.00024850643,0.00013675557,0.00020149637,0.0002213638,0.00032425806,0.00019355098,0.00067694706],"category_scores_gemma":[0.00016450183,0.00007861341,0.00012691155,0.00019677727,0.00015807888,0.00032671785,0.00017539955,0.00019022587,0.00014848381],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00010093502,0.000024132609,0.0003884305,0.000052268908,0.000008570686,0.00024364497,0.000023542305,0.0003828669,0.99657756,0.00018566618,0.0001959302,0.0018163724],"study_design_scores_gemma":[0.00004353115,0.00036460737,0.0025731851,0.000010313044,0.000048243634,0.0006415386,0.000029824145,0.009703961,0.9845946,0.00014613177,0.0018313768,0.000012734765],"about_ca_topic_score_codex":0.0010725678,"about_ca_topic_score_gemma":0.0013727596,"teacher_disagreement_score":0.0010725678,"about_ca_system_score_codex":0.00039170706,"about_ca_system_score_gemma":0.00021395976,"threshold_uncertainty_score":0.0028420687},"labels":[],"label_agreement":null},{"id":"W1972323610","doi":"10.1149/1.2980577","title":"Stable Pixel Circuit for Small-Area High-Resolution a-Si:H AMOLED Displays","year":2008,"lang":"en","type":"article","venue":"ECS Transactions","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"IGNIS Innovation (Canada)","funders":"University of Waterloo","keywords":"AMOLED; Materials science; Aperture (computer memory); Pixel; Power consumption; Frame rate; Frame (networking); OLED; Active matrix; Optoelectronics; Thermal; Diode; Optics; Power (physics); Computer science; Physics; Telecommunications; Nanotechnology","score_opus":0.029768038394898232,"score_gpt":0.19355545413397732,"score_spread":0.1637874157390791,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1972323610","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.53675234,0.0039223763,0.44163612,0.0011493366,0.0005021161,0.00033869024,0.0005999553,0.0035227467,0.011576403],"genre_scores_gemma":[0.8872926,0.00054638105,0.106017925,0.00022974177,0.000115567374,0.00008514604,0.000109319764,0.0001033421,0.005499896],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998599,0.0000145491695,0.000007971193,0.000029967856,0.0000748342,0.000012643021],"domain_scores_gemma":[0.99980897,0.00006332888,0.000038445836,0.00002093288,0.0000514736,0.000016758368],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00021439248,0.0001288462,0.00015071148,0.00014028682,0.00031255235,0.0005140476,0.00078556524,0.00039551107,0.002074459],"category_scores_gemma":[0.0003046336,0.00013020255,0.00011580864,0.00012953853,0.00019904207,0.00060845306,0.00020314069,0.00032109473,0.0005744244],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00009433089,0.000029836754,0.00035403328,0.00010550724,0.00000912702,0.00010985099,0.00004526784,0.00037419214,0.9698174,0.0021578395,0.0009267772,0.025975885],"study_design_scores_gemma":[0.00004713609,0.0005958382,0.0017450872,0.000012101544,0.00001994011,0.00068197347,0.000025393265,0.015475109,0.9672678,0.00082559296,0.013283022,0.000020998299],"about_ca_topic_score_codex":0.00020707675,"about_ca_topic_score_gemma":0.00043067322,"teacher_disagreement_score":0.002074459,"about_ca_system_score_codex":0.00027772735,"about_ca_system_score_gemma":0.0002025166,"threshold_uncertainty_score":0.006939709},"labels":[],"label_agreement":null},{"id":"W1972479219","doi":"10.1088/0022-3727/44/26/262001","title":"Wave-optical studies of light trapping in submicrometre-textured ultra-thin crystalline silicon solar cells","year":2011,"lang":"en","type":"article","venue":"Journal of Physics D Applied Physics","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":18,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Toronto","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Materials science; Energy conversion efficiency; Optoelectronics; Optics; Solar cell efficiency; Fabrication; Thin film; Solar cell; Plasmonic solar cell; Silicon; Trapping; Reflection (computer programming); Yield (engineering); Polymer solar cell; Nanotechnology; Physics","score_opus":0.034547364486048275,"score_gpt":0.21899299645029469,"score_spread":0.1844456319642464,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1972479219","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9958912,0.00017722517,0.001172953,0.00003529486,0.0000052130918,0.000007551996,0.00004790205,0.000018482579,0.0026441438],"genre_scores_gemma":[0.9981244,0.00014885247,0.00092759484,0.000009174693,0.0000023671005,0.000006789251,0.00006117579,0.0000072560565,0.0007124084],"study_design_codex":"bench_or_experimental","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99993527,0.0000031007444,0.000001935288,0.0000056723648,0.0000333037,0.000020841539],"domain_scores_gemma":[0.99986935,0.000061964456,0.00002338718,0.000009595215,0.000026735526,0.000008988479],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00010376186,0.00016415885,0.00022342658,0.00029611913,0.00032040518,0.00042532553,0.00043044382,0.00026924597,0.0019208695],"category_scores_gemma":[0.00031311662,0.00016080627,0.0002201653,0.00030259351,0.00031022605,0.00033439873,0.00016553499,0.0002205523,0.00018199782],"study_design_candidate":"simulation_or_modeling","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00027685318,0.00018033916,0.0045844107,0.00041833133,0.00006773433,0.00096686103,0.00026703233,0.20399076,0.7640894,0.013861835,0.00063894247,0.010657514],"study_design_scores_gemma":[0.0001241991,0.00049971446,0.0076235547,0.000025004647,0.00004172227,0.00023222929,0.00036331394,0.64368063,0.34373826,0.0018707445,0.0017563581,0.00004431227],"about_ca_topic_score_codex":0.0054030754,"about_ca_topic_score_gemma":0.0047810157,"teacher_disagreement_score":0.0054030754,"about_ca_system_score_codex":0.0005786325,"about_ca_system_score_gemma":0.00040256465,"threshold_uncertainty_score":0.01074326},"labels":[],"label_agreement":null},{"id":"W1972658676","doi":"10.1007/s10853-005-0585-z","title":"Properties and characterization of low-temperature amorphous PECVD silicon nitride films for solar cell passivation","year":2005,"lang":"en","type":"article","venue":"Journal of Materials Science","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":14,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Plasma-enhanced chemical vapor deposition; Materials science; Silicon nitride; Passivation; Solar cell; Hydrogen; Chemical vapor deposition; Analytical Chemistry (journal); Stoichiometry; Deposition (geology); Amorphous solid; Chemical engineering; Silicon; Nanotechnology; Layer (electronics); Optoelectronics; Chemistry; Crystallography; Physical chemistry","score_opus":0.00960649200010765,"score_gpt":0.1828904470225508,"score_spread":0.17328395502244315,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1972658676","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99590045,0.0008280895,0.0013056967,0.00004591321,0.00002246299,0.000021118836,0.00030235806,0.00003776098,0.0015361849],"genre_scores_gemma":[0.99703515,0.0003405971,0.0009661535,0.000015196552,0.0000071272916,0.0000141566825,0.0002824896,0.000020554739,0.0013184712],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99984896,0.000010349934,0.000009334759,0.000028679331,0.00007602547,0.000026659263],"domain_scores_gemma":[0.9996817,0.00008641207,0.000047465786,0.000039980416,0.00011976585,0.00002474022],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00016051781,0.00022463944,0.00030843655,0.00024618965,0.00032436935,0.00046408275,0.0003765914,0.0003374749,0.0011304516],"category_scores_gemma":[0.0004347511,0.000235204,0.00017244622,0.00027198676,0.00014740927,0.00027907733,0.00012339787,0.00029216227,0.00023899131],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0000830176,0.0000145687445,0.00062519213,0.000039142145,0.000009069193,0.000060378108,0.00003074002,0.00028076972,0.9971848,0.000040735988,0.00011222977,0.0015194342],"study_design_scores_gemma":[0.000012056694,0.00020286832,0.009628954,0.0000089342875,0.00001883758,0.000114672745,0.00003984912,0.002526099,0.9863733,0.000023967472,0.0010454679,0.000005028682],"about_ca_topic_score_codex":0.0015982669,"about_ca_topic_score_gemma":0.0035735301,"teacher_disagreement_score":0.0015982669,"about_ca_system_score_codex":0.00032150457,"about_ca_system_score_gemma":0.00028359066,"threshold_uncertainty_score":0.0037817955},"labels":[],"label_agreement":null},{"id":"W1973207990","doi":"10.1143/jjap.49.03ca09","title":"High Speed Six-Transistor Static Random Access Memory Cells Using Single Grain Thin Film Transistors Fabricated at Low Temperature Process","year":2010,"lang":"en","type":"article","venue":"Japanese Journal of Applied Physics","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":2,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"","funders":"University of Toronto","keywords":"Thin-film transistor; Static random-access memory; Materials science; Transistor; Optoelectronics; Electronic engineering; Electrical engineering; Nanotechnology; Voltage; Engineering","score_opus":0.010139366867025908,"score_gpt":0.21685802923491426,"score_spread":0.20671866236788836,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1973207990","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.94716674,0.0016035882,0.046150554,0.00019477568,0.00020332,0.00006566402,0.00056433387,0.0006982426,0.0033526581],"genre_scores_gemma":[0.94802696,0.000680103,0.047223736,0.00004976658,0.000026407622,0.000040293093,0.0003332964,0.00003599752,0.0035834536],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99993634,0.0000031428742,0.0000053151475,0.00001566114,0.000029514733,0.000009908464],"domain_scores_gemma":[0.9998472,0.000037408325,0.000031228356,0.000022298476,0.000049741557,0.000012111292],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00008237979,0.00016530832,0.00028590366,0.00015599128,0.00014771236,0.00026256155,0.0005664574,0.00035660242,0.0012104944],"category_scores_gemma":[0.00020842909,0.00011895743,0.00018947228,0.00016755622,0.00013166491,0.00035838777,0.000120997924,0.00021564306,0.000547551],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000045582332,0.000009913637,0.0005609721,0.00012802218,0.000013683962,0.00017517041,0.000034480836,0.0007646333,0.9898245,0.00028549123,0.00023731701,0.00792021],"study_design_scores_gemma":[0.000017888871,0.00016755487,0.00085673097,0.000006386112,0.000028546478,0.0002796884,0.000027590913,0.007357703,0.9885589,0.00015258169,0.002536578,0.000009917253],"about_ca_topic_score_codex":0.00034103764,"about_ca_topic_score_gemma":0.0009833013,"teacher_disagreement_score":0.0012104944,"about_ca_system_score_codex":0.00014721249,"about_ca_system_score_gemma":0.0001282945,"threshold_uncertainty_score":0.00404948},"labels":[],"label_agreement":null},{"id":"W1974757956","doi":"10.1142/s0217979202015157","title":"ELECTRICAL PROPERTIES OF <font>Si</font><sub><font>1-X-Y</font></sub><font>Ge</font><sub><font>X</font></sub><font>C</font><sub><font>Y</font></sub> FILMS GROWN BY ION IMPLANTATION AND SOLID PHASE EPITAXY","year":2002,"lang":"en","type":"article","venue":"International Journal of Modern Physics B","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"","funders":"McGill University; National Science Foundation","keywords":"Materials science; Epitaxy; Annealing (glass); Alloy; Solid solution; Ternary operation; Ion implantation; Hall effect; Ion; Lattice (music); Electron mobility; Analytical Chemistry (journal); Crystallography; Electrical resistivity and conductivity; Optoelectronics; Layer (electronics); Nanotechnology; Metallurgy; Chemistry","score_opus":0.01571574718485414,"score_gpt":0.23359700614638082,"score_spread":0.21788125896152669,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1974757956","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99705577,0.00030213254,0.0006389172,0.000046452813,0.000017863831,0.0000045989163,0.0004311844,0.000040958585,0.001462229],"genre_scores_gemma":[0.9964551,0.00022909227,0.00027793308,0.000016587255,0.0000060634297,0.0000049245905,0.00048240976,0.00001442421,0.0025135025],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999232,0.0000053772787,0.0000045915244,0.00001631657,0.000027542894,0.000022878066],"domain_scores_gemma":[0.9997328,0.00009655582,0.000035997135,0.000022749382,0.00009049489,0.000021408987],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00007595073,0.00015101198,0.00016337183,0.000121095,0.00010871005,0.00024324167,0.00012515824,0.00026131584,0.0027556655],"category_scores_gemma":[0.00040351442,0.000103527134,0.00011264335,0.00018772206,0.0001325122,0.0001710211,0.00007769013,0.00016012814,0.00045183944],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0003485193,0.00002143185,0.0023057603,0.00008272377,0.000030029561,0.00017710187,0.00009023146,0.001002159,0.9908194,0.00016584224,0.00041640678,0.0045403047],"study_design_scores_gemma":[0.000025905327,0.000708267,0.024138143,0.000015506545,0.000068808135,0.00025958658,0.00011296243,0.005911596,0.9660311,0.00010464547,0.0026073074,0.000016127899],"about_ca_topic_score_codex":0.0009696771,"about_ca_topic_score_gemma":0.0011683439,"teacher_disagreement_score":0.0027556655,"about_ca_system_score_codex":0.00018449916,"about_ca_system_score_gemma":0.00011015741,"threshold_uncertainty_score":0.009218633},"labels":[],"label_agreement":null},{"id":"W1976211714","doi":"10.1063/1.2408630","title":"Directly deposited nanocrystalline silicon thin-film transistors with ultra high mobilities","year":2006,"lang":"en","type":"article","venue":"Applied Physics Letters","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":53,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Thin-film transistor; Materials science; Nanocrystalline material; Silicon; Transistor; Optoelectronics; Chemical vapor deposition; Thin film; Electron mobility; Nanocrystalline silicon; Electron; Deposition (geology); Nanotechnology; Electrical engineering; Crystalline silicon; Amorphous silicon","score_opus":0.003938536485575115,"score_gpt":0.15600460536553035,"score_spread":0.15206606887995522,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1976211714","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9753983,0.0044108815,0.012918304,0.00061986037,0.00037040145,0.00008508612,0.0003892524,0.00042723052,0.0053806584],"genre_scores_gemma":[0.9699869,0.0015795393,0.02272661,0.00021447342,0.00006061333,0.000047635334,0.00020101562,0.000055680724,0.005127551],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99977297,0.000011509776,0.00001934962,0.000053905616,0.00010464078,0.00003771925],"domain_scores_gemma":[0.9996426,0.00011361273,0.000065368484,0.0000591114,0.00008830828,0.000030924566],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00012033655,0.0003361193,0.00043058195,0.00016359678,0.00018883507,0.00043504874,0.0006080278,0.00050940964,0.0011954557],"category_scores_gemma":[0.000550102,0.00028554272,0.0002154739,0.00017282533,0.00024337877,0.00040799938,0.00023353453,0.0005257387,0.00055086595],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0000344609,0.00001039019,0.00013770406,0.00006709771,0.000010110897,0.00013174205,0.000026015923,0.000063947766,0.99702436,0.00013424976,0.00013161082,0.0022282714],"study_design_scores_gemma":[0.000013078267,0.000052591593,0.00040410223,0.0000023243101,0.000013458061,0.00013412275,0.0000076063143,0.0005327523,0.9974795,0.000035794168,0.0013198012,0.0000049029195],"about_ca_topic_score_codex":0.0008741079,"about_ca_topic_score_gemma":0.0029214865,"teacher_disagreement_score":0.0011954557,"about_ca_system_score_codex":0.0003821935,"about_ca_system_score_gemma":0.00016824607,"threshold_uncertainty_score":0.0039992332},"labels":[],"label_agreement":null},{"id":"W1976404606","doi":"10.1889/1.2012599","title":"Driving large‐sized OLED TVs with an amorphous‐silicon backplane","year":2005,"lang":"en","type":"article","venue":"Journal of the Society for Information Display","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":5,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"","funders":"University of Asia Pacific; University of Vermont; Université de Sherbrooke","keywords":"Citation; Computer science; Art history; World Wide Web; Art","score_opus":0.0043360986394575095,"score_gpt":0.19915133756681133,"score_spread":0.19481523892735383,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1976404606","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9750649,0.0006309282,0.011792576,0.00030128803,0.00011705665,0.00002722374,0.00019392105,0.0003904155,0.011481704],"genre_scores_gemma":[0.99094826,0.0002855007,0.0051502553,0.000060842976,0.000031662545,0.000010705811,0.00007720338,0.000026086387,0.0034094963],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.999962,0.0000026826824,0.0000019485294,0.000008592226,0.000016234442,0.000008594505],"domain_scores_gemma":[0.99993026,0.00003170547,0.000008512943,0.0000056230324,0.0000137216675,0.000010244284],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00006450529,0.00012464529,0.00012140649,0.000083830404,0.0002113029,0.00029472716,0.00024245745,0.00017443718,0.0018724415],"category_scores_gemma":[0.00011419455,0.00008702453,0.00012877569,0.000068017376,0.0001819888,0.00027112386,0.00021820773,0.00022774606,0.00036994056],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000048128877,0.000014274299,0.00014166938,0.000025688323,0.000005226979,0.00008689221,0.00002806053,0.00023500419,0.9949956,0.0006132532,0.0002935973,0.0035125643],"study_design_scores_gemma":[0.000022744876,0.00015996482,0.000832377,0.000005476948,0.000012186361,0.00014454387,0.000037368445,0.0061266627,0.9869322,0.00029468338,0.0054245587,0.0000071590066],"about_ca_topic_score_codex":0.00058634975,"about_ca_topic_score_gemma":0.0009279061,"teacher_disagreement_score":0.0018724415,"about_ca_system_score_codex":0.00018769484,"about_ca_system_score_gemma":0.00010870446,"threshold_uncertainty_score":0.0062639713},"labels":[],"label_agreement":null},{"id":"W1976472296","doi":"10.1117/12.2006549","title":"Design of plasmonic enhanced silicon-based solar cells","year":2012,"lang":"en","type":"article","venue":"Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Carleton University","funders":"","keywords":"Materials science; Solar cell; Plasmonic solar cell; Plasmon; Amorphous silicon; Silicon; Optoelectronics; Crystalline silicon; Nanoparticle; Refractive index; Polymer solar cell; Optics; Nanotechnology; Physics","score_opus":0.012291187226589497,"score_gpt":0.208154871746143,"score_spread":0.1958636845195535,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1976472296","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.7465731,0.0028081655,0.22024222,0.000510011,0.00040535379,0.000343588,0.0010888703,0.0010534995,0.026975207],"genre_scores_gemma":[0.8916415,0.00093160034,0.10063765,0.00013663445,0.000032852993,0.00024234224,0.0002763044,0.000049583035,0.006051677],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999207,0.0000046439527,0.000004749314,0.0000220774,0.00003518208,0.000012602918],"domain_scores_gemma":[0.9999635,0.000004750582,0.0000068952672,0.00000417241,0.000015549382,0.00000508573],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00006125445,0.00017512497,0.00033655486,0.000094670926,0.00017406634,0.00045007354,0.00073803216,0.00041798007,0.0007397397],"category_scores_gemma":[0.00008983434,0.00017673065,0.0001900471,0.00015894222,0.00013667825,0.00020458805,0.0001788229,0.00027239812,0.00041847024],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00007488189,0.000076800505,0.00050145306,0.00021949063,0.000045455425,0.00021033216,0.00004584288,0.03205094,0.94638115,0.0043666246,0.0009708131,0.015056266],"study_design_scores_gemma":[0.00009129115,0.00029812622,0.0013225353,0.000019008854,0.000050866693,0.00027407412,0.000045708977,0.2055062,0.7695468,0.0012219765,0.02159868,0.000024745827],"about_ca_topic_score_codex":0.00053437235,"about_ca_topic_score_gemma":0.0011965431,"teacher_disagreement_score":0.0007397397,"about_ca_system_score_codex":0.0004182435,"about_ca_system_score_gemma":0.00026868333,"threshold_uncertainty_score":0.0030345917},"labels":[],"label_agreement":null},{"id":"W1976483869","doi":"10.1109/inec.2013.6465984","title":"Stoichiometric amorphous hydrogenated silicon carbide thin film synthesis using DC-saddle plasma enhanced chemical vapour deposition","year":2013,"lang":"en","type":"article","venue":"","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":4,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Toronto","funders":"","keywords":"Materials science; Plasma-enhanced chemical vapor deposition; Chemical vapor deposition; Stoichiometry; Silicon carbide; Passivation; Amorphous silicon; Amorphous solid; Thin film; Carbon film; Chemical engineering; Silicon; Amorphous carbon; Surface roughness; Analytical Chemistry (journal); Optoelectronics; Nanotechnology; Crystalline silicon; Composite material; Layer (electronics); Chemistry","score_opus":0.010651468846268455,"score_gpt":0.1911067283415214,"score_spread":0.18045525949525293,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1976483869","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9025877,0.0023340636,0.05387608,0.0002241467,0.0001747722,0.0009186711,0.004423983,0.0006852175,0.034775443],"genre_scores_gemma":[0.94051874,0.002616434,0.048521493,0.000052176983,0.000023170383,0.00021188223,0.00203977,0.00012444267,0.0058919806],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998982,0.0000055003256,0.00000908171,0.00002147142,0.00005273737,0.000013035365],"domain_scores_gemma":[0.9999387,0.000008777855,0.000010713628,0.000012123298,0.000020539243,0.000009098811],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00011952288,0.00035018194,0.000281031,0.0004967826,0.00027541327,0.00030440543,0.00033287803,0.00019446944,0.0017535992],"category_scores_gemma":[0.00012792581,0.00036896722,0.00015542797,0.0005252355,0.00017603605,0.00020687842,0.0001757905,0.0003750038,0.00066867145],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0000069976654,0.000008987159,0.00004816528,0.00005784118,0.0000035892438,0.000037128273,0.000010705044,0.00015508877,0.9979956,0.00023196786,0.00008097111,0.0013629809],"study_design_scores_gemma":[0.0000116967385,0.000066937966,0.0005242807,0.0000050995864,0.0000069431067,0.000077579236,0.0000126965315,0.0011403909,0.99456245,0.00007877282,0.0035095725,0.0000034232792],"about_ca_topic_score_codex":0.000651988,"about_ca_topic_score_gemma":0.0024733031,"teacher_disagreement_score":0.0017535992,"about_ca_system_score_codex":0.00031998847,"about_ca_system_score_gemma":0.00035494016,"threshold_uncertainty_score":0.0058663487},"labels":[],"label_agreement":null},{"id":"W1976549869","doi":"10.1139/cjp-2013-0631","title":"Development of plasma-enhanced chemical vapor deposition microcrystalline silicon oxide as a replacement for N-type or back transparent conducting oxide layers in amorphous silicon single-junction solar cells","year":2014,"lang":"en","type":"article","venue":"Canadian Journal of Physics","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":3,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":false,"route_ca_venue":true,"route_about_ca":false,"ca_institutions":"","funders":"National Science Council","keywords":"Chemical vapor deposition; Amorphous silicon; Analytical Chemistry (journal); Silicon; Quantum efficiency; Oxide; Indium tin oxide; Solar cell; Materials science; Amorphous solid; Microcrystalline; Nanocrystalline silicon; Plasma-enhanced chemical vapor deposition; Optoelectronics; Thin film; Nanotechnology; Crystalline silicon; Crystallography; Chemistry; Metallurgy","score_opus":0.046470568279457565,"score_gpt":0.23199723814300507,"score_spread":0.18552666986354752,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1976549869","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99257725,0.0012641913,0.0047947704,0.000028594643,0.000038780345,0.000059681555,0.00014674684,0.00006230813,0.0010276645],"genre_scores_gemma":[0.97801876,0.0014133244,0.019008657,0.000025391166,0.000016572198,0.000051989256,0.00017267506,0.00002224523,0.0012703831],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999273,0.000004076515,0.0000053424505,0.000020276968,0.00003292925,0.000010080142],"domain_scores_gemma":[0.9999366,0.000011353711,0.000016375512,0.000007731217,0.00001424835,0.000013712572],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00009357361,0.00022381252,0.00020446382,0.000120099816,0.00009546078,0.0002119963,0.00035107342,0.00021526177,0.00022579536],"category_scores_gemma":[0.00011704528,0.00021530467,0.00018752563,0.00012697728,0.00012124822,0.00016529791,0.00014637754,0.00024083637,0.000101630314],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000004708701,0.0000058859778,0.00007112908,0.000014475618,0.0000017318808,0.00002141605,0.0000048156185,0.00006514565,0.9992551,0.000019100109,0.0000063882667,0.000529995],"study_design_scores_gemma":[0.0000054492175,0.00011726229,0.00124672,0.0000017519632,0.000008358036,0.000061771076,0.000006917937,0.0010691846,0.9968983,0.0000068763275,0.0005750087,0.0000023391196],"about_ca_topic_score_codex":0.0011017853,"about_ca_topic_score_gemma":0.0024610679,"teacher_disagreement_score":0.0011017853,"about_ca_system_score_codex":0.00020916709,"about_ca_system_score_gemma":0.00023736309,"threshold_uncertainty_score":0.0021907687},"labels":[],"label_agreement":null},{"id":"W1976576857","doi":"10.1889/1.2433289","title":"46.1: <i>Invited Paper</i> : a‐Si for AMOLED — Meeting the Performance and Cost Demands of Display Applications (Cell Phone to HDTV)","year":2006,"lang":"en","type":"article","venue":"SID Symposium Digest of Technical Papers","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":4,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"IGNIS Innovation (Canada)","funders":"","keywords":"AMOLED; Phone; High-definition television; Computer science; Multimedia; Computer graphics (images); Computer hardware; Materials science; Telecommunications; Nanotechnology; Active matrix; Thin-film transistor; Layer (electronics)","score_opus":0.0036439067413272207,"score_gpt":0.18738456100580966,"score_spread":0.18374065426448244,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1976576857","genre_codex":"other","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.026638445,0.039220832,0.013775528,0.06572474,0.19562742,0.001194161,0.0015645629,0.0012869571,0.6549673],"genre_scores_gemma":[0.0652868,0.007877368,0.0032244746,0.005092619,0.0196257,0.00016306709,0.0007225756,0.000376962,0.8976304],"study_design_codex":"not_applicable","study_design_gemma":"not_applicable","domain_scores_codex":[0.9996519,0.00003367529,0.00001187951,0.00007227319,0.00014696408,0.00008332345],"domain_scores_gemma":[0.9996704,0.000049451974,0.000012856472,0.000013259168,0.00015981116,0.0000941881],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00053233356,0.0007634007,0.00033829518,0.00057883526,0.0016009909,0.0022434604,0.00048939063,0.0029551212,0.0333721],"category_scores_gemma":[0.00049153395,0.00025079888,0.00050341163,0.00030491722,0.00041021648,0.00066636567,0.00039090804,0.0013673303,0.015981182],"study_design_candidate":"not_applicable","study_design_consensus":"not_applicable","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00039099396,0.00007519002,0.0004167501,0.00030032758,0.000018364373,0.000815318,0.000119842036,0.00030049976,0.03269339,0.007491314,0.9195167,0.037861433],"study_design_scores_gemma":[0.000026798785,0.00018023788,0.0011066772,0.00007007144,0.000014861559,0.00033196027,0.000097316675,0.00065835105,0.018292528,0.0013427164,0.977852,0.00002643368],"about_ca_topic_score_codex":0.0019045405,"about_ca_topic_score_gemma":0.00558754,"teacher_disagreement_score":0.0333721,"about_ca_system_score_codex":0.0015233677,"about_ca_system_score_gemma":0.0008373672,"threshold_uncertainty_score":0.11164081},"labels":[],"label_agreement":null},{"id":"W1976950145","doi":"10.1063/1.2186378","title":"Temperature dependent refractive index of amorphous silicon determined by time-resolved reflectivity during low fluence excimer laser heating","year":2006,"lang":"en","type":"article","venue":"Journal of Applied Physics","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":26,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Acadia University","funders":"","keywords":"Refractive index; Molar absorptivity; Materials science; Silicon; Fluence; Excimer laser; Excimer; Annealing (glass); Amorphous solid; Amorphous silicon; Optics; Laser; Wavelength; Analytical Chemistry (journal); Crystalline silicon; Optoelectronics; Chemistry; Composite material","score_opus":0.0033238442832092784,"score_gpt":0.18936192763238155,"score_spread":0.18603808334917227,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1976950145","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99625397,0.00028316473,0.0019891993,0.000019779069,0.000006317786,0.0000062026124,0.00018072576,0.000046115954,0.0012145853],"genre_scores_gemma":[0.99750817,0.00022138786,0.0013819968,0.000006032662,0.0000026865068,0.0000074178033,0.0001328129,0.000017109087,0.00072226167],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99983287,0.00001420533,0.000006800171,0.000048500126,0.00006590981,0.00003164541],"domain_scores_gemma":[0.9997328,0.000083195126,0.00006641192,0.000027757653,0.00007275367,0.000017148683],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00020559083,0.0002386079,0.00026448813,0.00024126614,0.0002349702,0.00040821295,0.00027719696,0.00024514244,0.0007065581],"category_scores_gemma":[0.00043610693,0.00023143782,0.00014625784,0.00027346786,0.0003253626,0.0003282934,0.0001297054,0.0004966557,0.0003582409],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00004598608,0.000009082475,0.0006903754,0.000014136484,0.0000033368326,0.000040759405,0.000080817765,0.00019096417,0.9982158,0.00006671686,0.000018715748,0.0006233953],"study_design_scores_gemma":[0.0000030405313,0.000068622656,0.0056390488,0.0000034185907,0.0000062661165,0.00006816504,0.000042449505,0.0025220623,0.99136543,0.00002731191,0.00024663232,0.0000074969926],"about_ca_topic_score_codex":0.001309552,"about_ca_topic_score_gemma":0.0017216982,"teacher_disagreement_score":0.001309552,"about_ca_system_score_codex":0.00035173088,"about_ca_system_score_gemma":0.00015046867,"threshold_uncertainty_score":0.0026038885},"labels":[],"label_agreement":null},{"id":"W1977738893","doi":"10.1117/12.732664","title":"Modeling of Si-based solar cells with V-grooved surface texture by Crosslight APSYS","year":2007,"lang":"en","type":"article","venue":"Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":8,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Crosslight Software (Canada)","funders":"","keywords":"Materials science; Common emitter; Optoelectronics; Texture (cosmology); Solar cell; Silicon; Amorphous silicon; Absorption (acoustics); Polycrystalline silicon; Short circuit; Optics; Ray tracing (physics); Layer (electronics); Voltage; Crystalline silicon; Computer science; Nanotechnology; Electrical engineering; Physics; Composite material","score_opus":0.006996857479994775,"score_gpt":0.19859257662218943,"score_spread":0.19159571914219464,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1977738893","genre_codex":"empirical","genre_gemma":"methods","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"methods","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.8786513,0.00043665606,0.088942066,0.00023569017,0.000050564544,0.00011705871,0.002010818,0.0006024009,0.02895342],"genre_scores_gemma":[0.98388493,0.00027437074,0.010235971,0.00004230268,0.000009031006,0.00013438801,0.00049048924,0.00007601088,0.004852422],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99991834,0.000012738709,0.0000036012966,0.000013378143,0.000035663004,0.000016269225],"domain_scores_gemma":[0.9998969,0.000040499002,0.000011463429,0.000014149723,0.000028606513,0.000008362839],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00010045617,0.00037825675,0.0005342993,0.0002022212,0.00028565354,0.0006356264,0.0009324263,0.0008163709,0.0023534065],"category_scores_gemma":[0.00035654212,0.0003196744,0.0005813966,0.00038864012,0.00026778417,0.00041014358,0.00026354493,0.00033172392,0.00035055855],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000023423525,0.000013309437,0.00042706094,0.000021665595,0.000009966806,0.000074116586,0.00003380736,0.99032754,0.006762646,0.0011229785,0.00014676581,0.0010367436],"study_design_scores_gemma":[0.0000073786546,0.000012506325,0.00022401212,0.0000024508822,0.000003282894,0.0000137930065,0.000009710109,0.997773,0.0014002401,0.00021158272,0.00033808243,0.000003980334],"about_ca_topic_score_codex":0.015763381,"about_ca_topic_score_gemma":0.007469264,"teacher_disagreement_score":0.015763381,"about_ca_system_score_codex":0.00087942183,"about_ca_system_score_gemma":0.00060380716,"threshold_uncertainty_score":0.03134322},"labels":[],"label_agreement":null},{"id":"W1978094335","doi":"10.1063/1.1797541","title":"Relationship between the optical gap and the optical-absorption tail breadth in amorphous GaAs","year":2004,"lang":"en","type":"article","venue":"Journal of Applied Physics","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":21,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Regina","funders":"Natural Sciences and Engineering Research Council of Canada; Fundação de Amparo à Pesquisa do Estado de São Paulo; Universidade Estadual de Campinas; CMC Microsystems","keywords":"Amorphous solid; Absorption (acoustics); Materials science; Gallium arsenide; Germanium; Absorption spectroscopy; Amorphous silicon; Optoelectronics; Band gap; Amorphous semiconductors; Silicon; Optics; Chemistry; Crystallography; Physics; Crystalline silicon","score_opus":0.022733775178179004,"score_gpt":0.222516277612789,"score_spread":0.19978250243461,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1978094335","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9945696,0.00044409494,0.0026836784,0.000035980847,0.0000030723133,0.000004078053,0.000044755667,0.000068284346,0.002146386],"genre_scores_gemma":[0.9991372,0.000118887634,0.00051022094,0.0000073218807,0.0000028695026,0.0000032239282,0.000023528004,0.0000089431605,0.00018788176],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999255,0.000009327367,0.0000038863154,0.000015332758,0.000026289368,0.000019507612],"domain_scores_gemma":[0.99933076,0.0004209205,0.00011664621,0.000033042536,0.000060765604,0.00003792861],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00016830656,0.00016232711,0.0001465549,0.0005062278,0.00018948076,0.00040654573,0.00021919823,0.00033141003,0.00091727806],"category_scores_gemma":[0.0008063894,0.00020446557,0.00009524101,0.00028033336,0.00030734958,0.00038995667,0.00027715098,0.00035353177,0.00020717808],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00028699898,0.000053435488,0.006925488,0.00008409197,0.000025381456,0.00038218152,0.00013126846,0.0063662184,0.9771377,0.0025597939,0.000073703566,0.0059736627],"study_design_scores_gemma":[0.00005334129,0.0006833711,0.06153083,0.00006464695,0.0000765174,0.0012971766,0.0003145597,0.06959369,0.8598524,0.0053585367,0.0011309504,0.0000440922],"about_ca_topic_score_codex":0.00032428774,"about_ca_topic_score_gemma":0.0003839171,"teacher_disagreement_score":0.00091727806,"about_ca_system_score_codex":0.00014335293,"about_ca_system_score_gemma":0.00009894305,"threshold_uncertainty_score":0.003068626},"labels":[],"label_agreement":null},{"id":"W1978287030","doi":"10.1016/j.cap.2009.03.011","title":"Modeling of transient and steady-state dark current in amorphous silicon p–i–n photodiodes","year":2009,"lang":"en","type":"article","venue":"Current Applied Physics","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":13,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Concordia University","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Photodiode; Dark current; Transient (computer programming); Amorphous silicon; Silicon; Electron; Optoelectronics; Steady state (chemistry); Current (fluid); Depletion region; Materials science; Current density; Amorphous solid; Physics; Photodetector; Chemistry; Semiconductor; Crystalline silicon; Thermodynamics","score_opus":0.019460690540945805,"score_gpt":0.23196509934968687,"score_spread":0.21250440880874105,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1978287030","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.7449324,0.0011101179,0.23078111,0.00064004713,0.000109411005,0.000115343806,0.000451199,0.0011464912,0.02071382],"genre_scores_gemma":[0.9938094,0.00013707062,0.0026662338,0.000030318546,0.000011424125,0.000023371138,0.000057561818,0.000036346675,0.0032284022],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9998747,0.000023172443,0.000005017412,0.000029079116,0.00004005355,0.000028025075],"domain_scores_gemma":[0.9996158,0.00020258584,0.00003956032,0.000033032775,0.00008966181,0.000019377654],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00029935024,0.00042642042,0.00041465633,0.00030747618,0.0003482201,0.0006590208,0.001019409,0.00087766605,0.001385959],"category_scores_gemma":[0.0010281962,0.00032595624,0.00065744127,0.0002919067,0.0004737064,0.00091137196,0.0002161445,0.00042521302,0.00024983587],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00018275803,0.00008779621,0.0016741721,0.000105550345,0.000047743528,0.00025430977,0.00015272743,0.9547128,0.029470872,0.006913235,0.0006791968,0.005718849],"study_design_scores_gemma":[0.0000028768893,0.000015781481,0.00020192821,0.0000026465032,0.000005169426,0.000010971189,0.000007560081,0.99700963,0.0021814469,0.0004459623,0.00011326898,0.000002872333],"about_ca_topic_score_codex":0.010764512,"about_ca_topic_score_gemma":0.0074855494,"teacher_disagreement_score":0.010764512,"about_ca_system_score_codex":0.001505165,"about_ca_system_score_gemma":0.0007438996,"threshold_uncertainty_score":0.02140373},"labels":[],"label_agreement":null},{"id":"W1978378396","doi":"10.1889/1.3256597","title":"P‐104: Low Pressure Hot Wall Deposition of Mono‐Crystalline Rubrene Thin Films for Organic Thin Film Transistors","year":2009,"lang":"en","type":"article","venue":"SID Symposium Digest of Technical Papers","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McGill University","funders":"","keywords":"Rubrene; Materials science; Thin film; Thin-film transistor; Octadecyltrichlorosilane; Deposition (geology); Optoelectronics; Layer (electronics); Composite material; Nanotechnology; Silicon","score_opus":0.005334157347994625,"score_gpt":0.19509571099816378,"score_spread":0.18976155365016917,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1978378396","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.97973686,0.00192574,0.0131460205,0.00009529272,0.000043297794,0.00006495939,0.00021501085,0.00031008397,0.0044627422],"genre_scores_gemma":[0.9809337,0.00087396475,0.0142248105,0.000026270889,0.000016617008,0.00003187177,0.00020428526,0.000046013236,0.0036423083],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999157,0.000008171099,0.000005702807,0.000012991424,0.00004263418,0.000014746757],"domain_scores_gemma":[0.9999008,0.000031451356,0.00002376048,0.00001566553,0.000016799831,0.000011533083],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00011081049,0.00022100005,0.00016432736,0.00018658569,0.0001227359,0.00024517003,0.00034297077,0.00020801574,0.0010988986],"category_scores_gemma":[0.00021533362,0.00020913179,0.00014991958,0.000115800685,0.00012138841,0.00023240679,0.00014117692,0.00024467494,0.00045086214],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0000071799623,0.0000028993823,0.000030377689,0.000018426193,0.0000015591802,0.000026579053,0.00000427983,0.000022826645,0.9991611,0.000025160318,0.000029018234,0.0006705283],"study_design_scores_gemma":[0.000005388211,0.00006506725,0.0007947979,0.000002642202,0.0000037263258,0.00012097194,0.000005354331,0.0005516952,0.99767476,0.000011691811,0.00076202134,0.0000019992833],"about_ca_topic_score_codex":0.00041245826,"about_ca_topic_score_gemma":0.001132925,"teacher_disagreement_score":0.0010988986,"about_ca_system_score_codex":0.00018322152,"about_ca_system_score_gemma":0.00013881829,"threshold_uncertainty_score":0.003676176},"labels":[],"label_agreement":null},{"id":"W1979062062","doi":"10.1134/s1063782608020127","title":"Photoconductivity of thin a-Si:H films","year":2008,"lang":"en","type":"article","venue":"Semiconductors","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Photoconductivity; Photoelectric effect; Materials science; Photon energy; Attenuation coefficient; Absorption edge; Absorption (acoustics); Atmospheric temperature range; Analytical Chemistry (journal); Range (aeronautics); Temperature coefficient; Conductivity; Optoelectronics; Molecular physics; Optics; Photon; Chemistry; Band gap; Physical chemistry; Physics; Thermodynamics; Composite material","score_opus":0.022459467112053606,"score_gpt":0.20293542512974014,"score_spread":0.18047595801768654,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1979062062","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.997221,0.0007681239,0.00057284394,0.000040706786,0.000013109151,0.000009359498,0.00020840533,0.00003127083,0.0011351398],"genre_scores_gemma":[0.99669766,0.0006249025,0.0010355571,0.000041377076,0.000011365748,0.00001514148,0.0003000506,0.000018981387,0.0012549328],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99988985,0.000008283998,0.000008600549,0.000029701183,0.000040131086,0.000023378383],"domain_scores_gemma":[0.9996475,0.00014375796,0.000051582032,0.00003097832,0.00009460283,0.000031543015],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00019789247,0.00029821054,0.00018561081,0.0002983755,0.00016322563,0.0002845334,0.00023267085,0.00029036592,0.0017365061],"category_scores_gemma":[0.00037712418,0.00020376552,0.00017714838,0.0002610051,0.00020441237,0.00029403114,0.0001563515,0.00039654513,0.00025275288],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000042326963,0.000012076685,0.00025012842,0.0000332002,0.000011599191,0.000030572275,0.000025037725,0.00009635092,0.9987451,0.000027189806,0.000029543176,0.00069690257],"study_design_scores_gemma":[0.00000803597,0.00014629496,0.0031171276,0.0000070699607,0.000013617039,0.00007464465,0.000029861747,0.0007409792,0.99555224,0.000029479248,0.00027627335,0.0000042377605],"about_ca_topic_score_codex":0.000919332,"about_ca_topic_score_gemma":0.0010257604,"teacher_disagreement_score":0.0017365061,"about_ca_system_score_codex":0.00024001846,"about_ca_system_score_gemma":0.00011631995,"threshold_uncertainty_score":0.0058091283},"labels":[],"label_agreement":null},{"id":"W1981582146","doi":"10.1063/1.4798928","title":"The augmented saddle field discharge characteristics and its applications for plasma enhanced chemical vapour deposition","year":2013,"lang":"en","type":"article","venue":"Journal of Applied Physics","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":21,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Toronto","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Materials science; Silicon; Silane; Plasma; Substrate (aquarium); Chemical vapor deposition; Anode; Plasma-enhanced chemical vapor deposition; Amorphous silicon; Wafer; Optoelectronics; Atomic physics; Analytical Chemistry (journal); Electrode; Crystalline silicon; Chemistry; Composite material","score_opus":0.006541592359351446,"score_gpt":0.19906994805186146,"score_spread":0.19252835569251,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1981582146","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9207986,0.0018199931,0.06125557,0.00019896436,0.000035639223,0.00004907511,0.00029525434,0.00028730984,0.015259464],"genre_scores_gemma":[0.99172324,0.00028557167,0.006683373,0.000011733387,0.0000086876225,0.000009987032,0.00007487118,0.000015460579,0.0011871505],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999453,0.0000050791714,0.0000018179179,0.000013435952,0.000026969734,0.000007501247],"domain_scores_gemma":[0.9999101,0.000026143282,0.000014606916,0.000013667427,0.000026340083,0.00000904391],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000112633796,0.00019795191,0.00017145167,0.00014280052,0.0001169189,0.00029859543,0.00034333047,0.00028048173,0.00077406917],"category_scores_gemma":[0.0001508508,0.000119905184,0.0001459917,0.00023226898,0.00017670689,0.00024170363,0.00013053247,0.00020635537,0.00023741674],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00012954274,0.000017951272,0.0012685356,0.0000871203,0.000006965587,0.00015292816,0.00006918849,0.0017943716,0.9838022,0.0030651814,0.00022155758,0.009384341],"study_design_scores_gemma":[0.00005338274,0.0016843542,0.01712506,0.000026693928,0.000033127355,0.0030793606,0.00011881625,0.10041684,0.8572106,0.0032290292,0.016979009,0.000043785865],"about_ca_topic_score_codex":0.00032574654,"about_ca_topic_score_gemma":0.0003023144,"teacher_disagreement_score":0.00077406917,"about_ca_system_score_codex":0.0002327292,"about_ca_system_score_gemma":0.00013014495,"threshold_uncertainty_score":0.0025894642},"labels":[],"label_agreement":null},{"id":"W1981708023","doi":"10.1557/proc-814-i3.1","title":"A-Si Amoled Display Backplanes on Flexible Substrates","year":2004,"lang":"en","type":"article","venue":"MRS Proceedings","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":12,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"AMOLED; Backplane; Materials science; Thin-film transistor; OLED; Active matrix; Optoelectronics; Transistor; Electronic circuit; Diode; Flexible display; Threshold voltage; Voltage; Electrical engineering; Computer science; Nanotechnology; Computer hardware","score_opus":0.009661612871595868,"score_gpt":0.1984376823961338,"score_spread":0.18877606952453793,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1981708023","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.95089895,0.0006802196,0.016535241,0.00022693444,0.00025255623,0.000026547106,0.0005266902,0.00072040287,0.030132473],"genre_scores_gemma":[0.9793285,0.00036853767,0.009877076,0.00007406619,0.000041129173,0.000023349545,0.00025869865,0.00007993227,0.009948691],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99993014,0.000006274082,0.0000030678875,0.000016712114,0.000025562209,0.000018230301],"domain_scores_gemma":[0.99987626,0.000039714898,0.000018477054,0.000025195597,0.000024731302,0.000015638796],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00006266602,0.0003086984,0.0001998438,0.00021500312,0.00030379542,0.0006046382,0.00045788192,0.00037651978,0.0045950804],"category_scores_gemma":[0.00017136506,0.0001775048,0.00015145527,0.00020065336,0.00015898935,0.0004190495,0.00034280715,0.0003654501,0.0013289308],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00018505269,0.000019931385,0.00037555725,0.00006409519,0.0000087554245,0.0002937845,0.00005589581,0.0005940791,0.9899559,0.0018336036,0.0010900907,0.0055232598],"study_design_scores_gemma":[0.000046464596,0.00023696775,0.0036375602,0.000021341197,0.000012597637,0.00051799987,0.00012815835,0.010547776,0.97561,0.00075904996,0.008463843,0.000018206178],"about_ca_topic_score_codex":0.00047005533,"about_ca_topic_score_gemma":0.00083142606,"teacher_disagreement_score":0.0045950804,"about_ca_system_score_codex":0.00023323525,"about_ca_system_score_gemma":0.000077227225,"threshold_uncertainty_score":0.015372038},"labels":[],"label_agreement":null},{"id":"W1981891820","doi":"10.1063/1.2902499","title":"Analysis of the off current in nanocrystalline silicon bottom-gate thin-film transistors","year":2008,"lang":"en","type":"article","venue":"Journal of Applied Physics","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":17,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Passivation; Materials science; Silicon nitride; Band bending; Nanocrystalline material; Optoelectronics; Nitride; Nanocrystalline silicon; Thin-film transistor; Conductivity; Transistor; Amorphous silicon; Silicon; Crystalline silicon; Layer (electronics); Nanotechnology; Electrical engineering; Voltage; Chemistry","score_opus":0.012557433171305631,"score_gpt":0.2078389257948578,"score_spread":0.19528149262355216,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1981891820","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9672906,0.0008069895,0.019691488,0.0002678314,0.000043011267,0.000029496385,0.0003418079,0.0002737554,0.011255083],"genre_scores_gemma":[0.99574584,0.00022495161,0.002303745,0.000026192292,0.00000856221,0.000013865139,0.00012022468,0.000023569208,0.0015330268],"study_design_codex":"simulation_or_modeling","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999181,0.000005364784,0.000002526842,0.000010822599,0.00004574536,0.000017392082],"domain_scores_gemma":[0.9998534,0.000072714014,0.000023430763,0.000010476308,0.000028495786,0.000011391549],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00010411451,0.00026280174,0.00033661985,0.00023662127,0.00023405011,0.00031211402,0.0005104009,0.00048410994,0.00118314],"category_scores_gemma":[0.00044970278,0.00015049808,0.00037016332,0.00020158033,0.00035160332,0.00035552587,0.00010495501,0.00028352227,0.00014012745],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0003751169,0.00012364559,0.004152372,0.0002966736,0.00008597693,0.00090088224,0.00019841763,0.6612633,0.31004807,0.011790247,0.0009511806,0.009814142],"study_design_scores_gemma":[0.000014491642,0.000057253008,0.001521335,0.0000097357815,0.000015875827,0.00006380258,0.000020107376,0.9748498,0.021788564,0.0011345807,0.000516396,0.000007996103],"about_ca_topic_score_codex":0.009759274,"about_ca_topic_score_gemma":0.004979545,"teacher_disagreement_score":0.009759274,"about_ca_system_score_codex":0.0013433408,"about_ca_system_score_gemma":0.00048439225,"threshold_uncertainty_score":0.019404948},"labels":[],"label_agreement":null},{"id":"W1981990546","doi":"10.1557/proc-0910-a18-02","title":"Hot-wire CVD a-Si:H TFT on Plastic Substrates","year":2006,"lang":"en","type":"article","venue":"MRS Proceedings","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":4,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Simon Fraser University","funders":"","keywords":"Materials science; Thin-film transistor; Plasma-enhanced chemical vapor deposition; Chemical vapor deposition; Amorphous silicon; Optoelectronics; Gate dielectric; Substrate (aquarium); Amorphous solid; Silicon; Fabrication; Transistor; Nanotechnology; Layer (electronics); Electrical engineering; Crystalline silicon; Crystallography","score_opus":0.006937987676345562,"score_gpt":0.17618140018895082,"score_spread":0.16924341251260525,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1981990546","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9911186,0.00068223634,0.0015324844,0.00016128179,0.00012690968,0.000021861886,0.00064999564,0.00018059895,0.0055260146],"genre_scores_gemma":[0.9946444,0.00029523755,0.0018200518,0.000023356113,0.000024081295,0.00001247934,0.00023416276,0.000042397172,0.0029037562],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998833,0.0000052192295,0.000005226606,0.000034757704,0.0000360951,0.000035348246],"domain_scores_gemma":[0.99986815,0.000045387056,0.000019577947,0.000025886007,0.000025851026,0.000015189181],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0001031447,0.00020902157,0.00029820684,0.00021558283,0.00047754444,0.00040500486,0.0004589453,0.00035411702,0.0028508028],"category_scores_gemma":[0.00025942177,0.0002523101,0.00011957166,0.00024654812,0.00018595588,0.00039379045,0.00018004482,0.0003218275,0.00067120267],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00019728248,0.000012165476,0.00032213636,0.00009308226,0.000010058897,0.00019057847,0.000060582664,0.0002926187,0.99630797,0.00014766732,0.0005126954,0.0018531348],"study_design_scores_gemma":[0.000018201918,0.00013583586,0.001962289,0.000007594508,0.0000066874904,0.00010819641,0.00006365624,0.0015078903,0.9945797,0.000056284116,0.0015467744,0.0000069772523],"about_ca_topic_score_codex":0.00225017,"about_ca_topic_score_gemma":0.004677629,"teacher_disagreement_score":0.0028508028,"about_ca_system_score_codex":0.00045611846,"about_ca_system_score_gemma":0.000246768,"threshold_uncertainty_score":0.009536862},"labels":[],"label_agreement":null},{"id":"W1982454009","doi":"10.1109/jdt.2014.2312351","title":"Hybrid Sensor and Display Pixel Circuits for Mobile Near-to-Eye Applications","year":2014,"lang":"en","type":"article","venue":"Journal of Display Technology","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"University of Waterloo","keywords":"Photodiode; Pixel; Thin-film transistor; Optoelectronics; RGB color model; Materials science; Electronic circuit; Photodetector; Diode; Active matrix; Transistor; Light intensity; Optics; Dynamic range; Voltage; Computer science; Physics; Electrical engineering; Artificial intelligence; Layer (electronics); Nanotechnology; Engineering","score_opus":0.004930197792065136,"score_gpt":0.2247825355635939,"score_spread":0.21985233777152877,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1982454009","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.5384633,0.0018793253,0.4456581,0.00028456602,0.00014077584,0.00026184876,0.0004991529,0.004074531,0.008738374],"genre_scores_gemma":[0.8859605,0.00025018954,0.10948866,0.00011100272,0.000028019269,0.00013896993,0.00014059439,0.00005801195,0.003824096],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99987674,0.000019620862,0.0000040143327,0.00002161094,0.00005993858,0.000018023635],"domain_scores_gemma":[0.99986625,0.000038146976,0.000019335414,0.00001331433,0.0000523951,0.0000105634335],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0001721812,0.000306753,0.00024117414,0.000120704644,0.00014151602,0.00037936537,0.00086570624,0.00047139722,0.0035169888],"category_scores_gemma":[0.00023626238,0.00013176049,0.00019096804,0.00016432923,0.000109462846,0.0005421242,0.00014283239,0.00019560437,0.0004413606],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0005355882,0.00021488362,0.0030455696,0.0003737233,0.00017680984,0.00033356276,0.00014335125,0.0574297,0.80222523,0.010907753,0.00582748,0.11878632],"study_design_scores_gemma":[0.00008867804,0.0011325887,0.0037075856,0.000026425527,0.00012631802,0.00065030047,0.000065686094,0.5348734,0.43924734,0.0022902226,0.017745469,0.00004594541],"about_ca_topic_score_codex":0.00041107854,"about_ca_topic_score_gemma":0.0006772155,"teacher_disagreement_score":0.0035169888,"about_ca_system_score_codex":0.0004903958,"about_ca_system_score_gemma":0.00015507564,"threshold_uncertainty_score":0.01176554},"labels":[],"label_agreement":null},{"id":"W1982607117","doi":"10.1063/1.3295483","title":"Lattice and Hydrogen Dynamics in Hydrogenated Amorphous Silicon: First-Principles Molecular Dynamics versus Experiment","year":2010,"lang":"en","type":"article","venue":"AIP conference proceedings","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Ontario Tech University","funders":"","keywords":"Amorphous solid; Amorphous silicon; Silicon; Molecular dynamics; Materials science; Chemical physics; Hydrogen; Molecular vibration; Ab initio; Crystalline silicon; Computational chemistry; Chemistry; Crystallography; Molecule; Organic chemistry; Optoelectronics","score_opus":0.013525835447002225,"score_gpt":0.21507545763427344,"score_spread":0.2015496221872712,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1982607117","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9849658,0.0004226315,0.009477943,0.00019837907,0.000016351312,0.000030632964,0.00039322273,0.00014630627,0.004348832],"genre_scores_gemma":[0.9933582,0.00029096263,0.005553048,0.00003431199,0.0000080321115,0.000052881718,0.0002606469,0.000036313162,0.00040554113],"study_design_codex":"simulation_or_modeling","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99990976,0.000021881717,0.0000026818159,0.000012573596,0.00003305399,0.000020122485],"domain_scores_gemma":[0.9997085,0.00019472408,0.00002302113,0.000024181705,0.000029243687,0.000020438116],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00033247555,0.00037615062,0.0004885845,0.00030272856,0.00054561795,0.0005486926,0.000599383,0.0005391013,0.0011066261],"category_scores_gemma":[0.00060640473,0.00030070636,0.00034592647,0.0004831103,0.00076649216,0.00055999187,0.0002772234,0.0006051744,0.00008139085],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00015351358,0.00012491188,0.0020120111,0.00010393223,0.000042700427,0.00009373686,0.00013338053,0.97215825,0.014579076,0.007038896,0.0002517775,0.003307729],"study_design_scores_gemma":[0.00005688653,0.000046407342,0.0005841433,0.0000052638766,0.00000553543,0.000008946498,0.000015532954,0.99544734,0.002579547,0.0010418034,0.00020072372,0.000007795279],"about_ca_topic_score_codex":0.0072854827,"about_ca_topic_score_gemma":0.0042232573,"teacher_disagreement_score":0.0072854827,"about_ca_system_score_codex":0.0007955768,"about_ca_system_score_gemma":0.00063535536,"threshold_uncertainty_score":0.014486134},"labels":[],"label_agreement":null},{"id":"W1982639879","doi":"10.1021/cm021250c","title":"Remote Hydrogen Plasma Chemical Vapor Deposition from (Dimethylsilyl)(trimethylsilyl)methane. 1. Kinetics of the Process; Chemical and Morphological Structure of Deposited Silicon−Carbon Films","year":2003,"lang":"en","type":"article","venue":"Chemistry of Materials","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":35,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Polytechnique Montréal","funders":"","keywords":"Chemical vapor deposition; Silicon; Plasma-enhanced chemical vapor deposition; Chemical engineering; Materials science; Amorphous carbon; Hydrogen; Methane; Carbon film; Arrhenius equation; Kinetics; Thin film; Amorphous solid; Trimethylsilyl; Substrate (aquarium); Analytical Chemistry (journal); Chemistry; Nanotechnology; Organic chemistry; Activation energy","score_opus":0.0060269413323313726,"score_gpt":0.19171875009108727,"score_spread":0.1856918087587559,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1982639879","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9832002,0.003186478,0.0076965643,0.00010945483,0.00006587912,0.00007922974,0.000757208,0.00036607732,0.004538982],"genre_scores_gemma":[0.9843329,0.0015487972,0.009828077,0.00003100361,0.000021110265,0.00004143071,0.00066393113,0.000055569628,0.0034771338],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99990666,0.00000597988,0.0000042655406,0.000025399744,0.000039102903,0.00001860067],"domain_scores_gemma":[0.99993455,0.000019926913,0.000017134453,0.000009700993,0.000009814345,0.000008822416],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0001202558,0.0002959571,0.00019998639,0.00015119035,0.00013036591,0.0001497694,0.00031176073,0.00021564285,0.0013413612],"category_scores_gemma":[0.00013007311,0.00018049242,0.00018912555,0.00010343655,0.00013296558,0.00015380772,0.0001266113,0.00036512452,0.00031313693],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00001198778,0.0000020966131,0.000021667107,0.000032777596,0.0000014145338,0.000023763756,0.000004465831,0.00002263144,0.9993388,0.000038987517,0.000019744273,0.0004815393],"study_design_scores_gemma":[0.0000048355646,0.00005708013,0.00077088684,0.0000018126053,0.0000030167785,0.00007956537,0.0000029763587,0.0003500928,0.99787545,0.000009307648,0.00084372365,0.0000013205573],"about_ca_topic_score_codex":0.00044710038,"about_ca_topic_score_gemma":0.00089624047,"teacher_disagreement_score":0.0013413612,"about_ca_system_score_codex":0.00019095678,"about_ca_system_score_gemma":0.000109571054,"threshold_uncertainty_score":0.0044873357},"labels":[],"label_agreement":null},{"id":"W1983566322","doi":"10.1109/jqe.2005.845029","title":"Two-dimensional a-Si:H n-i-p photodiode array for low-level light detection","year":2005,"lang":"en","type":"article","venue":"IEEE Journal of Quantum Electronics","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":19,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Photodiode; Optoelectronics; Materials science; Diode; Transistor; Leakage (economics); Active matrix; Fabrication; Electronics; Quantum efficiency; Detector; Photodetector; Voltage; Reverse leakage current; Thin-film transistor; Optics; Electrical engineering; Physics; Nanotechnology; Engineering","score_opus":0.014902885764901369,"score_gpt":0.2320503072223832,"score_spread":0.21714742145748184,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1983566322","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.58997786,0.0025089842,0.39563927,0.00024825206,0.00017663442,0.00015693135,0.00053893344,0.0014702397,0.009282888],"genre_scores_gemma":[0.75667703,0.00041957683,0.23943594,0.00006392071,0.00003228719,0.00007435105,0.00016309078,0.000024186691,0.0031095464],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99986887,0.00002249107,0.0000055500627,0.000037771424,0.000055547833,0.000009663736],"domain_scores_gemma":[0.99981433,0.0000839955,0.00001826909,0.000027681901,0.0000414703,0.00001424953],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00014359219,0.00020883352,0.00019605717,0.00013628899,0.00016424198,0.00031418295,0.00045243552,0.00032635548,0.0012292566],"category_scores_gemma":[0.00029546514,0.00014688606,0.00013343133,0.00015930287,0.00012534899,0.00034055335,0.00021559166,0.00026396062,0.00045900105],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00007433709,0.00003312866,0.0010474682,0.00010191721,0.000015644395,0.00005718968,0.000020710677,0.0012233979,0.970237,0.0006467632,0.0004242418,0.026118211],"study_design_scores_gemma":[0.000018104596,0.00035836318,0.0031720921,0.000007093974,0.000025826717,0.00052306085,0.00002513723,0.027868567,0.9600277,0.00026296615,0.0076935366,0.000017517063],"about_ca_topic_score_codex":0.00016986868,"about_ca_topic_score_gemma":0.00050851627,"teacher_disagreement_score":0.0012292566,"about_ca_system_score_codex":0.00018299489,"about_ca_system_score_gemma":0.00015836387,"threshold_uncertainty_score":0.0041122437},"labels":[],"label_agreement":null},{"id":"W1983740568","doi":"10.1557/proc-808-a2.4","title":"Tritium Induced Defects in Amorphous Silicon","year":2004,"lang":"en","type":"article","venue":"MRS Proceedings","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":7,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Toronto","funders":"National Renewable Energy Laboratory; University of Utah; National Science Foundation","keywords":"Materials science; Tritium; Metastability; Amorphous silicon; Silicon; Hydrogen; Electron paramagnetic resonance; Amorphous solid; Crystallography; Optoelectronics; Nuclear magnetic resonance; Nuclear physics; Crystalline silicon; Chemistry","score_opus":0.011249868005311303,"score_gpt":0.19713756648555958,"score_spread":0.18588769848024828,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1983740568","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9957254,0.00035733217,0.00089067715,0.0000738015,0.000024183017,0.000006360039,0.00004948046,0.000037737675,0.002834975],"genre_scores_gemma":[0.99834144,0.00006970283,0.0002105596,0.00001679577,0.000003990627,0.0000039295714,0.000049786864,0.00000908925,0.0012945962],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99991393,0.000010567535,0.000004787873,0.000014744846,0.00003154327,0.000024436637],"domain_scores_gemma":[0.9996941,0.00012298273,0.00006535982,0.000034769128,0.000054091895,0.000028807222],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00019930927,0.000153645,0.00022976902,0.00052836305,0.000506911,0.00080583437,0.000539753,0.0004972687,0.0022161019],"category_scores_gemma":[0.0005591313,0.00017028497,0.00013397407,0.00040695505,0.00062672375,0.00051900203,0.00038580497,0.0003722684,0.0002319313],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0018467039,0.00021139,0.008534089,0.00027703264,0.00006999921,0.0027759082,0.0011123557,0.006672623,0.94445217,0.023532853,0.0015052311,0.009009686],"study_design_scores_gemma":[0.00027926164,0.0016947706,0.021078566,0.000052510055,0.000097745055,0.002193331,0.0016926223,0.024612395,0.9348263,0.0067117624,0.0066924915,0.000068211084],"about_ca_topic_score_codex":0.0012836918,"about_ca_topic_score_gemma":0.001522702,"teacher_disagreement_score":0.0022161019,"about_ca_system_score_codex":0.00046496236,"about_ca_system_score_gemma":0.00023754014,"threshold_uncertainty_score":0.007413566},"labels":[],"label_agreement":null},{"id":"W1983986167","doi":"10.1016/s0022-3093(00)00317-3","title":"Rapid relaxation and electronic properties of a-Si:H","year":2000,"lang":"en","type":"article","venue":"Journal of Non-Crystalline Solids","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Polytechnique Montréal; Université de Montréal","funders":"","keywords":"Relaxation (psychology); Trapping; Photoluminescence; Materials science; Simple (philosophy); Recombination; Condensed matter physics; Molecular physics; Chemical physics; Chemistry; Optoelectronics; Physics","score_opus":0.008037085550705847,"score_gpt":0.18921342839590288,"score_spread":0.18117634284519704,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1983986167","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9957754,0.0005019542,0.00078947947,0.00009465756,0.000029330035,0.000006376855,0.00012260093,0.000025899319,0.0026542891],"genre_scores_gemma":[0.9981573,0.00007366697,0.00018663758,0.000025398556,0.00000638529,0.0000032845346,0.00011483394,0.000008459522,0.0014239129],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999559,0.000005120224,0.0000011585007,0.000012282486,0.000008567422,0.00001690281],"domain_scores_gemma":[0.9998566,0.00007112521,0.000018594188,0.000012218451,0.000021611084,0.00001981957],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00014140637,0.00011998524,0.0000850391,0.00015622171,0.00021576378,0.00032176368,0.00024528036,0.00032093836,0.005410573],"category_scores_gemma":[0.00032519022,0.0001326715,0.00010042132,0.0001206814,0.00027216604,0.00041181038,0.00016587658,0.0004077587,0.00044678873],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00061381166,0.000073735755,0.0016769639,0.00008114144,0.000023245153,0.00013973306,0.00015409413,0.00046049265,0.9903279,0.0022359346,0.00060594326,0.0036070123],"study_design_scores_gemma":[0.00013912706,0.0006919242,0.030763216,0.000021633574,0.000027228783,0.00031117856,0.00047616407,0.015715858,0.94654113,0.0013562265,0.003925448,0.000030891704],"about_ca_topic_score_codex":0.0009410021,"about_ca_topic_score_gemma":0.0011363281,"teacher_disagreement_score":0.005410573,"about_ca_system_score_codex":0.00021813327,"about_ca_system_score_gemma":0.00011409584,"threshold_uncertainty_score":0.018100202},"labels":[],"label_agreement":null},{"id":"W1984334247","doi":"10.1116/1.1722271","title":"Stress-assisted nickel-induced crystallization of silicon on glass","year":2004,"lang":"en","type":"article","venue":"Journal of Vacuum Science & Technology A Vacuum Surfaces and Films","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":18,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Acadia University","funders":"","keywords":"Materials science; Crystallization; Silicon; Annealing (glass); Amorphous silicon; Composite material; Amorphous solid; Polycrystalline silicon; Transmission electron microscopy; Scanning electron microscope; Nanocrystalline silicon; Amorphous metal; Crystallite; Metallurgy; Crystallography; Layer (electronics); Crystalline silicon; Chemical engineering; Nanotechnology; Thin-film transistor; Chemistry; Alloy","score_opus":0.012542389019967428,"score_gpt":0.23160939657148222,"score_spread":0.2190670075515148,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1984334247","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99847823,0.00024347423,0.00033777402,0.000021168049,0.000014682073,0.000013253513,0.00007467728,0.000026171403,0.0007906355],"genre_scores_gemma":[0.9986344,0.00018284468,0.00046387245,0.000009296092,0.0000056833837,0.000008350758,0.00006598454,0.0000141131895,0.00061537244],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99989736,0.0000072487383,0.0000063857983,0.0000168445,0.00003336331,0.000038683742],"domain_scores_gemma":[0.99988043,0.000038352453,0.000026715637,0.00001637158,0.000019199146,0.00001894511],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00008083071,0.00022695983,0.0003847822,0.000120539255,0.00029981177,0.00033122968,0.00015381444,0.00014814045,0.0008250346],"category_scores_gemma":[0.0002517188,0.00017865162,0.00019270573,0.00015468517,0.00026104343,0.00016655779,0.00033059806,0.00021872055,0.00013348478],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00004456971,0.0000053630724,0.00021186266,0.000032709093,0.000004059835,0.00008430979,0.0000637758,0.00011015498,0.99881196,0.000047639212,0.00003113444,0.000552603],"study_design_scores_gemma":[0.0000057432276,0.0000573309,0.0023942194,0.0000028795982,0.00000274632,0.000041348478,0.000038367558,0.0007419789,0.99628806,0.000017127823,0.00040632187,0.0000040069654],"about_ca_topic_score_codex":0.003589937,"about_ca_topic_score_gemma":0.0073691835,"teacher_disagreement_score":0.003589937,"about_ca_system_score_codex":0.0005379166,"about_ca_system_score_gemma":0.00034232886,"threshold_uncertainty_score":0.0071380734},"labels":[],"label_agreement":null},{"id":"W1984607364","doi":"10.1109/jdt.2013.2275172","title":"A Novel Voltage-Programmed Pixel Circuit Utilizing $V_{T}$-Dependent Charge-Transfer to Improve Stability of AMOLED Display","year":2013,"lang":"en","type":"article","venue":"Journal of Display Technology","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":15,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Division of Materials Research; University of Waterloo","keywords":"AMOLED; Thin-film transistor; OLED; Capacitor; Capacitance; Optoelectronics; Transistor; Materials science; Diode; Electrical engineering; Threshold voltage; Voltage; Computer science; Physics; Electrode; Active matrix; Nanotechnology; Engineering","score_opus":0.013764690680196152,"score_gpt":0.22000141571881476,"score_spread":0.20623672503861862,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1984607364","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.826838,0.0018419815,0.16171984,0.00037704522,0.00027274527,0.00011318381,0.00029664484,0.0026070985,0.005933562],"genre_scores_gemma":[0.9567177,0.00033147115,0.039496023,0.0001800049,0.000067125016,0.000039225284,0.000082037266,0.00003990901,0.0030463848],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999269,0.0000053648364,0.0000036416286,0.000025815836,0.000025138166,0.000013070334],"domain_scores_gemma":[0.9999193,0.000021482976,0.0000139877075,0.0000099676045,0.000025339074,0.0000098862365],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00006409257,0.00015143448,0.0001794472,0.0001502877,0.0001695853,0.00032366568,0.00089152204,0.00032019874,0.0014698739],"category_scores_gemma":[0.00014885608,0.000109708635,0.00014279195,0.00017274806,0.00012131471,0.00047554186,0.00017826434,0.0002199733,0.00025740665],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0000811277,0.000025587387,0.00024791554,0.000057064302,0.000010403436,0.00011203709,0.000023941724,0.000321646,0.9773243,0.0008903688,0.00048033125,0.020425415],"study_design_scores_gemma":[0.000022610773,0.00022686749,0.000806192,0.0000044119,0.000020267567,0.0003465696,0.000009445594,0.016114725,0.97743,0.00017854205,0.0048265974,0.000013811185],"about_ca_topic_score_codex":0.00023178894,"about_ca_topic_score_gemma":0.00034170068,"teacher_disagreement_score":0.0014698739,"about_ca_system_score_codex":0.00023526947,"about_ca_system_score_gemma":0.00013404102,"threshold_uncertainty_score":0.004917264},"labels":[],"label_agreement":null},{"id":"W1984833445","doi":"10.1063/1.1641176","title":"The Urbach focus and hydrogenated amorphous silicon","year":2004,"lang":"en","type":"article","venue":"Applied Physics Letters","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":33,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Regina","funders":"","keywords":"Amorphous silicon; Silicon; Focus (optics); Amorphous solid; Materials science; Nanocrystalline silicon; Amorphous semiconductors; Absorption (acoustics); Crystalline silicon; Optoelectronics; Optics; Chemistry; Crystallography; Physics; Composite material","score_opus":0.004918224599997204,"score_gpt":0.16379176332600306,"score_spread":0.15887353872600585,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1984833445","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9444731,0.005873923,0.022833725,0.0009568034,0.00006832861,0.00003644373,0.000038881855,0.000041666433,0.025677001],"genre_scores_gemma":[0.9951761,0.0015879943,0.0022769899,0.0001513824,0.000034689154,0.000012048078,0.000017680335,0.0000057929606,0.0007373768],"study_design_codex":"theoretical_or_conceptual","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9997607,0.000044813267,0.000007133619,0.000033924687,0.00011262413,0.00004074225],"domain_scores_gemma":[0.9996105,0.00023128516,0.000054162014,0.000036078578,0.000055124812,0.000012755074],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000452143,0.00018515441,0.00029006737,0.0007858685,0.00038226022,0.00078940997,0.00042896793,0.0004907156,0.0011752319],"category_scores_gemma":[0.00077356107,0.0001363774,0.00020555005,0.00027532925,0.0014282927,0.0010250654,0.0006007826,0.00041662535,0.000117369505],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00032238042,0.000061408675,0.0063817175,0.00029139285,0.00013553159,0.0057083005,0.001396087,0.018068366,0.2101955,0.7187055,0.0011905194,0.037543386],"study_design_scores_gemma":[0.00009148144,0.0009731635,0.025518673,0.00026336467,0.00013454533,0.0056859464,0.0025101795,0.15421787,0.21734531,0.5572478,0.03588286,0.00012874906],"about_ca_topic_score_codex":0.0004975285,"about_ca_topic_score_gemma":0.00051240437,"teacher_disagreement_score":0.0011752319,"about_ca_system_score_codex":0.00032444144,"about_ca_system_score_gemma":0.00019237198,"threshold_uncertainty_score":0.0039315224},"labels":[],"label_agreement":null},{"id":"W1985269720","doi":"10.1116/1.1472423","title":"Amorphous silicon nitride deposited at 120 °C for organic light emitting display-thin film transistor arrays on plastic substrates","year":2002,"lang":"en","type":"article","venue":"Journal of Vacuum Science & Technology A Vacuum Surfaces and Films","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":67,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Natural Sciences and Engineering Research Council of Canada; University of Waterloo","keywords":"Materials science; Thin-film transistor; Amorphous solid; Optoelectronics; Silicon nitride; Subthreshold slope; Dielectric; Chemical vapor deposition; Active matrix; Thin film; Amorphous silicon; Nitride; Transistor; Plasma-enhanced chemical vapor deposition; Silicon; Threshold voltage; Nanotechnology; Crystalline silicon; Voltage; Electrical engineering; Crystallography; Chemistry","score_opus":0.009418688518240105,"score_gpt":0.19692907934901704,"score_spread":0.18751039083077695,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1985269720","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9933814,0.0006384391,0.0025519296,0.00005415511,0.000051531366,0.000043109765,0.0004261159,0.00011732741,0.002736124],"genre_scores_gemma":[0.9909638,0.00072305277,0.0047282814,0.00003085447,0.00001605439,0.000056395056,0.000476009,0.000037769743,0.0029676731],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999349,0.0000038124883,0.0000047991507,0.000017030783,0.000021535412,0.000017912836],"domain_scores_gemma":[0.9999304,0.000015823576,0.00001619462,0.000011134955,0.000014679425,0.000011731238],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0000700672,0.00021015343,0.00024299664,0.00020774122,0.0002329632,0.0002649778,0.00028982188,0.00015491706,0.001878269],"category_scores_gemma":[0.00011364576,0.00018449777,0.00013541021,0.0002566996,0.00007489284,0.00022434918,0.00011087898,0.0002492368,0.00044790914],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0000246988,0.0000053647445,0.00008094009,0.000019288405,0.0000025603833,0.000054013297,0.000007912897,0.000059909984,0.9991862,0.000026408967,0.000045334567,0.0004873995],"study_design_scores_gemma":[0.0000058071796,0.00007873807,0.0020611894,0.0000035207413,0.000007647501,0.000090201785,0.000017793862,0.0007415977,0.9958735,0.000018695817,0.0010982096,0.000003097254],"about_ca_topic_score_codex":0.00066321297,"about_ca_topic_score_gemma":0.0018250159,"teacher_disagreement_score":0.001878269,"about_ca_system_score_codex":0.00019478305,"about_ca_system_score_gemma":0.00016207749,"threshold_uncertainty_score":0.0062834024},"labels":[],"label_agreement":null},{"id":"W1985613509","doi":"10.1063/1.2784008","title":"Stability of nanocrystalline silicon bottom-gate thin film transistors with silicon nitride gate dielectric","year":2007,"lang":"en","type":"article","venue":"Journal of Applied Physics","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":30,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Materials science; Gate dielectric; Silicon nitride; Threshold voltage; Dielectric; Thin-film transistor; Transconductance; Optoelectronics; Nanocrystalline silicon; Nitride; Nanocrystalline material; Saturation (graph theory); Amorphous solid; Gate oxide; Silicon; Transistor; Amorphous silicon; Electrical engineering; Voltage; Nanotechnology; Crystalline silicon; Crystallography; Chemistry","score_opus":0.008855412111146224,"score_gpt":0.19571285952720316,"score_spread":0.18685744741605692,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1985613509","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99892837,0.00036131818,0.0003948645,0.000022680124,0.000007539669,0.0000029901853,0.00010292507,0.000013704861,0.00016559217],"genre_scores_gemma":[0.9990381,0.00019444028,0.00040905646,0.0000097015445,0.000003822508,0.0000048440947,0.00011961092,0.000005134978,0.00021536599],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99987686,0.0000056825043,0.000009019088,0.000034233562,0.000048642436,0.000025477177],"domain_scores_gemma":[0.9997631,0.00006752449,0.00006228994,0.00002308287,0.000057306523,0.000026639285],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000117580894,0.00021185102,0.00021936986,0.00010540946,0.00017210307,0.00020816653,0.00020286023,0.00019927355,0.0003855636],"category_scores_gemma":[0.00042349577,0.000081913,0.00013741569,0.00013031732,0.000182648,0.00028758083,0.00014373411,0.00017860699,0.00008027855],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00006134896,0.0000043518885,0.0009161753,0.000020966001,0.000010216814,0.000052511496,0.0000271909,0.00027766818,0.9977047,0.00002443882,0.000023908193,0.00087647536],"study_design_scores_gemma":[0.000005416247,0.00012930199,0.004820037,0.000002574716,0.000019529725,0.0001023713,0.000029678175,0.003033912,0.9915547,0.000027731352,0.00027058736,0.000004256506],"about_ca_topic_score_codex":0.0027783555,"about_ca_topic_score_gemma":0.0028081415,"teacher_disagreement_score":0.0027783555,"about_ca_system_score_codex":0.00044938587,"about_ca_system_score_gemma":0.00014489872,"threshold_uncertainty_score":0.0055243373},"labels":[],"label_agreement":null},{"id":"W1986700200","doi":"10.1063/1.4817369","title":"Broadband light trapping in thin organic photovoltaic cells using plasmonic resonant antennas","year":2013,"lang":"en","type":"article","venue":"Journal of Applied Physics","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":15,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Toronto","funders":"","keywords":"Plasmon; Optoelectronics; Materials science; Absorption (acoustics); Surface plasmon; Plasmonic solar cell; Photovoltaic system; Ray; Active layer; Optics; Energy conversion efficiency; Layer (electronics); Polymer solar cell; Physics; Nanotechnology; Electrical engineering","score_opus":0.010247852211396437,"score_gpt":0.18766904771940526,"score_spread":0.17742119550800883,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1986700200","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9777014,0.00024726512,0.016212063,0.00008733328,0.000012194982,0.000016018905,0.0000699547,0.00009784231,0.005555783],"genre_scores_gemma":[0.99316794,0.00015239533,0.005841732,0.00001580351,0.0000046116497,0.000013990523,0.000028403814,0.000010232309,0.0007649783],"study_design_codex":"simulation_or_modeling","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999441,0.0000081138205,0.000001847805,0.0000068092477,0.000026317928,0.000012737957],"domain_scores_gemma":[0.9998134,0.00010897549,0.00003407953,0.000011438447,0.000021828671,0.000010290583],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00010620745,0.00017028513,0.00022431476,0.00016705674,0.00021879774,0.00045279533,0.0002803061,0.0003613912,0.000592499],"category_scores_gemma":[0.0004891852,0.00023170763,0.00018774426,0.00016702774,0.00033349235,0.00031262237,0.00018554852,0.00021448775,0.00010379224],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000114651775,0.00009829814,0.0018930899,0.00019872606,0.00004660044,0.0003800531,0.00007673946,0.5132604,0.47178993,0.004296288,0.0002222341,0.0076228906],"study_design_scores_gemma":[0.000031544398,0.00013329716,0.0012201831,0.0000093835615,0.000022220262,0.00007185661,0.000041290976,0.94701964,0.050345413,0.0006863537,0.00040472552,0.000014061401],"about_ca_topic_score_codex":0.0016588547,"about_ca_topic_score_gemma":0.0013640675,"teacher_disagreement_score":0.0016588547,"about_ca_system_score_codex":0.00036898057,"about_ca_system_score_gemma":0.00020429079,"threshold_uncertainty_score":0.0032984018},"labels":[],"label_agreement":null},{"id":"W1986819181","doi":"10.1139/p99-031","title":"Comparative studies of the influence of hydrogen incorporation on the electronic properties of a-Ge:H films prepared by two different techniques","year":2000,"lang":"en","type":"article","venue":"Canadian Journal of Physics","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":false,"route_ca_venue":true,"route_about_ca":false,"ca_institutions":"","funders":"","keywords":"Germanium; Amorphous solid; Band gap; Hydrogen; Density of states; Semiconductor; Refractive index; Sputtering; Absorption (acoustics); Absorption spectroscopy; Physics; Germane; Chemical vapor deposition; Analytical Chemistry (journal); Spectral line; Deposition (geology); Atomic physics; Thin film; Optics; Crystallography; Condensed matter physics; Optoelectronics; Silicon; Chemistry","score_opus":0.021190123551139396,"score_gpt":0.22015365309238324,"score_spread":0.19896352954124386,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1986819181","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99855477,0.00057020615,0.0003719706,0.000009687838,0.000005031427,0.0000072692783,0.00007079542,0.000014768007,0.0003954793],"genre_scores_gemma":[0.996971,0.00069187453,0.0015880443,0.000013354404,0.000006301782,0.0000135267,0.00013313147,0.00002242888,0.00056040793],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99987805,0.000017140397,0.000011216649,0.000027603972,0.000041174142,0.000024831908],"domain_scores_gemma":[0.9997068,0.00013898453,0.00006897689,0.000024695908,0.000042959262,0.000017529366],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00016522211,0.0003107047,0.00022624857,0.0002819959,0.00019365971,0.00030245708,0.00022439689,0.00029458504,0.00075308833],"category_scores_gemma":[0.00040308113,0.00021017987,0.00016986058,0.000329625,0.00023883552,0.0002371197,0.0001669774,0.00021969789,0.00014431724],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00008585221,0.00001451378,0.0004352758,0.000054153126,0.000017110126,0.00005271365,0.00003494522,0.00009808511,0.9982596,0.000022137248,0.000009951658,0.0009157342],"study_design_scores_gemma":[0.000006317656,0.00021220469,0.003095522,0.0000026900657,0.000017341317,0.000053356925,0.000025190642,0.00025913343,0.9960406,0.00000716529,0.00027718392,0.0000032916275],"about_ca_topic_score_codex":0.0006054513,"about_ca_topic_score_gemma":0.0011094449,"teacher_disagreement_score":0.00075308833,"about_ca_system_score_codex":0.00014945712,"about_ca_system_score_gemma":0.000072514296,"threshold_uncertainty_score":0.0025193095},"labels":[],"label_agreement":null},{"id":"W1987180179","doi":"10.1063/1.2828862","title":"Combinatorial study of zinc tin oxide thin-film transistors","year":2008,"lang":"en","type":"article","venue":"Applied Physics Letters","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":77,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Dalhousie University","funders":"","keywords":"Thin-film transistor; Materials science; Tin; Transistor; Zinc; Tin oxide; Optoelectronics; Wide-bandgap semiconductor; Stoichiometry; Sputtering; Thin film; Threshold voltage; Layer (electronics); Semiconductor; Analytical Chemistry (journal); Nanotechnology; Voltage; Doping; Chemistry; Metallurgy; Electrical engineering; Chromatography","score_opus":0.01162965186789745,"score_gpt":0.18861232437041742,"score_spread":0.17698267250251998,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1987180179","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9883592,0.00053864706,0.007984493,0.00002612445,0.000008793577,0.000037102614,0.00010874874,0.000049681654,0.0028871403],"genre_scores_gemma":[0.9898032,0.00040995958,0.008102904,0.000013082924,0.000007599399,0.000031071304,0.00023309815,0.000014160307,0.0013848665],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998585,0.000016132417,0.0000068937607,0.00004639815,0.000053966556,0.000017988843],"domain_scores_gemma":[0.99981683,0.00007591869,0.00003653794,0.000017155127,0.00002967495,0.000023854727],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00011263293,0.00024747767,0.00027489304,0.00042392436,0.00023376087,0.00053495663,0.0002907809,0.00013253052,0.00079843734],"category_scores_gemma":[0.0005093298,0.00010626834,0.00019368943,0.00040969808,0.00019408172,0.00021444196,0.0001298326,0.000218589,0.00011477402],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000068473666,0.000050604238,0.0008680426,0.00006471782,0.000021994238,0.00023052501,0.000028186672,0.0029346368,0.98903847,0.0014247911,0.00005494484,0.0052146125],"study_design_scores_gemma":[0.000022379274,0.0003001444,0.0031538357,0.000006850614,0.000050683484,0.00046474778,0.00003499534,0.022866907,0.97002697,0.00089279533,0.0021686123,0.000011072048],"about_ca_topic_score_codex":0.0005402976,"about_ca_topic_score_gemma":0.00084569096,"teacher_disagreement_score":0.00079843734,"about_ca_system_score_codex":0.00031374505,"about_ca_system_score_gemma":0.00015891888,"threshold_uncertainty_score":0.0026710033},"labels":[],"label_agreement":null},{"id":"W1988726474","doi":"10.1139/cjp-2014-0403","title":"Far-infrared properties of helium-doped silicon","year":2015,"lang":"en","type":"article","venue":"Canadian Journal of Physics","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":false,"route_ca_venue":true,"route_about_ca":false,"ca_institutions":"","funders":"","keywords":"Attenuation coefficient; Refractive index; Absorption (acoustics); Silicon; Materials science; Atomic physics; Analytical Chemistry (journal); Helium; Semiconductor; Atmospheric temperature range; Infrared; Optics; Molecular physics; Physics; Optoelectronics; Chemistry","score_opus":0.0310529162388882,"score_gpt":0.18863242313083844,"score_spread":0.15757950689195024,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1988726474","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99727434,0.0005249773,0.0007641981,0.000020304878,0.000007150545,0.0000020986206,0.00014744604,0.000020257374,0.0012392992],"genre_scores_gemma":[0.9979341,0.0002628679,0.00054099754,0.000016942213,0.0000041209532,0.000003282679,0.0002959071,0.000014007078,0.0009277886],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998647,0.000008846771,0.000005572197,0.000031009473,0.000068607966,0.000021113572],"domain_scores_gemma":[0.99969685,0.00011195729,0.00005875703,0.000023342483,0.00009219154,0.000016859265],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00014760224,0.00022346622,0.0002051289,0.00033198937,0.00015426875,0.00021941694,0.00024544436,0.0003153873,0.0012000375],"category_scores_gemma":[0.00031378362,0.00018795095,0.00019812128,0.00030013267,0.00029452267,0.00028875287,0.0001437503,0.00021653602,0.000283072],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00009189541,0.000010239464,0.0015831781,0.000052960255,0.000014702156,0.00007868556,0.000060945542,0.0007739196,0.9956858,0.00009589991,0.00005798319,0.001493787],"study_design_scores_gemma":[0.000013551472,0.00025952733,0.028724045,0.000013825632,0.00002360925,0.00022170346,0.000110546156,0.0056985477,0.9640097,0.00008040525,0.00082092115,0.000023606299],"about_ca_topic_score_codex":0.00074681715,"about_ca_topic_score_gemma":0.0007750966,"teacher_disagreement_score":0.0012000375,"about_ca_system_score_codex":0.00021323004,"about_ca_system_score_gemma":0.000103315106,"threshold_uncertainty_score":0.0040145516},"labels":[],"label_agreement":null},{"id":"W1988748056","doi":"10.1557/proc-1012-y03-02","title":"Room Temperature Growth of Indium Oxide Films by Reactive Ion Beam Assisted Deposition","year":2007,"lang":"en","type":"article","venue":"MRS Proceedings","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":5,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Materials science; Indium; Thin film; Ion beam; Oxide; Optoelectronics; Indium tin oxide; Transparent conducting film; Evaporation; X-ray photoelectron spectroscopy; Amorphous solid; Electron beam physical vapor deposition; Ion beam-assisted deposition; Crystallite; Analytical Chemistry (journal); Optics; Nanotechnology; Chemical engineering; Beam (structure); Metallurgy; Crystallography","score_opus":0.0046625613639788765,"score_gpt":0.1879633358342829,"score_spread":0.18330077447030402,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1988748056","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99043894,0.001245036,0.0035974453,0.00015560909,0.00008065705,0.000023139684,0.00023727419,0.0002295277,0.0039924355],"genre_scores_gemma":[0.98656404,0.0009692241,0.007880251,0.000030964395,0.00002128249,0.000026862313,0.00029748323,0.00008616739,0.0041236933],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99989593,0.0000057415045,0.0000069081025,0.00002422507,0.00004610396,0.000021026342],"domain_scores_gemma":[0.99991953,0.00002050108,0.000016636088,0.000015674057,0.000017974027,0.000009556937],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00014742136,0.00024525487,0.00034508423,0.00022652527,0.00021682815,0.00037405943,0.000595061,0.0002964796,0.00077128253],"category_scores_gemma":[0.00030560113,0.00029643663,0.00012636415,0.00017021307,0.00018934622,0.00028272622,0.00017970763,0.0005059374,0.00039901887],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000020273961,0.0000039021597,0.00003565375,0.00002445187,0.000001373857,0.000027868617,0.000022415285,0.00003837201,0.9991947,0.000067743706,0.00005424036,0.0005089459],"study_design_scores_gemma":[0.0000075207836,0.000055120727,0.00060649373,0.0000029804435,0.0000044830213,0.000076154945,0.000013197082,0.0007583222,0.99710876,0.000024338864,0.0013378941,0.0000047814083],"about_ca_topic_score_codex":0.0010023381,"about_ca_topic_score_gemma":0.002402636,"teacher_disagreement_score":0.0010023381,"about_ca_system_score_codex":0.0003303511,"about_ca_system_score_gemma":0.0002576274,"threshold_uncertainty_score":0.0025802255},"labels":[],"label_agreement":null},{"id":"W1988990752","doi":"10.1149/06410.0123ecst","title":"(Invited) Gate Insulator for High Mobility Oxide TFT","year":2014,"lang":"en","type":"article","venue":"ECS Transactions","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":6,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Kootenay Association for Science & Technology","funders":"","keywords":"Thin-film transistor; Annealing (glass); Materials science; Optoelectronics; Atomic layer deposition; Insulator (electricity); Gate oxide; Transistor; Electrical engineering; Thin film; Layer (electronics); Nanotechnology; Metallurgy; Engineering; Voltage","score_opus":0.007635059925108393,"score_gpt":0.19051360444458665,"score_spread":0.18287854451947824,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1988990752","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.89154696,0.004181123,0.05510644,0.0010520192,0.0017383217,0.000070158196,0.0018268615,0.0021023084,0.04237585],"genre_scores_gemma":[0.97251344,0.0008176845,0.015021102,0.0002272931,0.00013727145,0.000024313806,0.00050761073,0.00009467435,0.010656601],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99995005,0.000002393508,0.0000016847341,0.000011686267,0.00001697283,0.000017296963],"domain_scores_gemma":[0.9999758,0.0000038179855,0.0000039969887,0.0000038249023,0.000006566446,0.000005951834],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000042354477,0.00015838759,0.00011844819,0.00009675564,0.00016922315,0.0003126304,0.00021275261,0.00026859113,0.0026750052],"category_scores_gemma":[0.00007584457,0.00006675229,0.00014610408,0.0000892961,0.00012546833,0.0002537818,0.00017599847,0.00026436258,0.0011049354],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000086764,0.000007421795,0.0002755475,0.000074202006,0.000004669436,0.00018631587,0.000024780666,0.00013870455,0.9916665,0.0008023639,0.0011569576,0.0055759],"study_design_scores_gemma":[0.000022198124,0.00029855507,0.0019580512,0.000007056262,0.000027698004,0.00048302382,0.000029493991,0.0021032202,0.95873106,0.00037253776,0.035957173,0.000009973993],"about_ca_topic_score_codex":0.0004598965,"about_ca_topic_score_gemma":0.0011098213,"teacher_disagreement_score":0.0026750052,"about_ca_system_score_codex":0.00016507899,"about_ca_system_score_gemma":0.000091352165,"threshold_uncertainty_score":0.008948743},"labels":[],"label_agreement":null},{"id":"W1989569615","doi":"10.1063/1.2349565","title":"Pulsed radio frequency plasma deposition of a-SiNx:H alloys: Film properties, growth mechanism, and applications","year":2006,"lang":"en","type":"article","venue":"Journal of Applied Physics","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":40,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Polytechnique Montréal; Regroupement Québécois sur les Matériaux de Pointe","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Materials science; Plasma-enhanced chemical vapor deposition; Elastic recoil detection; Ellipsometry; Thin film; Optoelectronics; Chemical vapor deposition; Photoluminescence; Duty cycle; Analytical Chemistry (journal); Substrate (aquarium); Nanotechnology; Chemistry","score_opus":0.006963962444591422,"score_gpt":0.16497177582446082,"score_spread":0.1580078133798694,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1989569615","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.98580027,0.004558478,0.0072588692,0.00012203644,0.00004189654,0.000023495286,0.000099783705,0.00005843881,0.0020366518],"genre_scores_gemma":[0.98556745,0.0016005401,0.011537106,0.000024488927,0.000017545148,0.00001086073,0.00007619651,0.000014539446,0.0011512267],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999349,0.000005804553,0.0000047096355,0.000015747142,0.000030140905,0.000008637046],"domain_scores_gemma":[0.99993646,0.000013071455,0.00001851627,0.000010727642,0.000014716604,0.0000066243665],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00012307389,0.00020359851,0.000120371784,0.00014784763,0.00014817987,0.00022744332,0.0003219251,0.00030469985,0.0004285092],"category_scores_gemma":[0.00011161531,0.0001562019,0.00012544464,0.00014991158,0.00015573596,0.00020687448,0.000108737426,0.000171435,0.0001431969],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000014368331,0.0000055047535,0.00017312395,0.000056743047,0.0000023891969,0.000041431318,0.000013832128,0.00010142696,0.99780816,0.00009828912,0.0000213913,0.0016633336],"study_design_scores_gemma":[0.0000056678555,0.000104748244,0.0014816822,0.0000037843547,0.000008762454,0.00019817836,0.00002271033,0.001390181,0.9952537,0.00003504925,0.00149197,0.000003632613],"about_ca_topic_score_codex":0.0004876609,"about_ca_topic_score_gemma":0.00063080894,"teacher_disagreement_score":0.0004876609,"about_ca_system_score_codex":0.00023819966,"about_ca_system_score_gemma":0.00012445597,"threshold_uncertainty_score":0.0017282367},"labels":[],"label_agreement":null},{"id":"W1991464194","doi":"10.1557/proc-664-a28.1","title":"Basic mechanisms of structural relaxation and diffusion in amorphous silicon","year":2001,"lang":"en","type":"article","venue":"MRS Proceedings","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Université de Montréal; Université du Québec à Montréal","funders":"Division of Materials Research; National Science Foundation","keywords":"Materials science; Relaxation (psychology); Diffusion; Amorphous solid; Amorphous silicon; Silicon; Atom (system on chip); Chemical physics; Statistical physics; Computer science; Thermodynamics; Crystallography; Crystalline silicon; Physics; Optoelectronics; Parallel computing","score_opus":0.006221944840059755,"score_gpt":0.18376918344340365,"score_spread":0.1775472386033439,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1991464194","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.7580634,0.024222463,0.16413675,0.0028167681,0.00063894555,0.00032849112,0.00059203134,0.0009555089,0.048245773],"genre_scores_gemma":[0.9786168,0.005013184,0.009530305,0.00018367374,0.00013346782,0.0001225259,0.00019319833,0.000051435578,0.0061554313],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999355,0.0000054890647,0.0000031600027,0.000013215993,0.00002477115,0.000017743843],"domain_scores_gemma":[0.99987626,0.00006928714,0.000013700856,0.000017358298,0.000012012658,0.000011387877],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00027719274,0.00033781014,0.0003263614,0.00040435966,0.0005478945,0.00050286035,0.0010768151,0.0007198718,0.0023413717],"category_scores_gemma":[0.00044595663,0.000385214,0.00035976182,0.00018117522,0.0011663468,0.001377423,0.00051070726,0.0008084105,0.0003887298],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00038989517,0.00014612428,0.00082177465,0.0008711195,0.000044122316,0.0007732481,0.00071176275,0.011720132,0.6528032,0.30745918,0.0012695007,0.02299003],"study_design_scores_gemma":[0.00040470733,0.0007986553,0.008370507,0.00015462328,0.00006374769,0.0020074728,0.0006712982,0.14888577,0.58901405,0.2283136,0.021085767,0.00022980322],"about_ca_topic_score_codex":0.0004106759,"about_ca_topic_score_gemma":0.00029752697,"teacher_disagreement_score":0.0023413717,"about_ca_system_score_codex":0.00043649852,"about_ca_system_score_gemma":0.0002069747,"threshold_uncertainty_score":0.007832646},"labels":[],"label_agreement":null},{"id":"W1991522415","doi":"10.1557/proc-1153-a06-02","title":"Optimization of p-type Nanocrystalline Silicon Thin Films for Solar Cells and Photodiodes","year":2009,"lang":"en","type":"article","venue":"MRS Proceedings","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":2,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Materials science; Silane; Nanocrystalline silicon; Plasma-enhanced chemical vapor deposition; Thin film; Raman spectroscopy; Conductivity; Silicon; Doping; Nanocrystalline material; Substrate (aquarium); Chemical vapor deposition; Analytical Chemistry (journal); Optoelectronics; Composite material; Amorphous silicon; Crystalline silicon; Nanotechnology; Optics","score_opus":0.008583744851498312,"score_gpt":0.1976644385226885,"score_spread":0.18908069367119018,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1991522415","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9828106,0.0029829901,0.0064952867,0.00026822343,0.00008942261,0.00007980855,0.00049528136,0.00014497084,0.006633335],"genre_scores_gemma":[0.9830625,0.0019021127,0.012209727,0.000044555607,0.00001665798,0.000068583075,0.00028993565,0.000098099445,0.002307869],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.999846,0.000008989185,0.000010897317,0.000036839036,0.000074554424,0.000022687973],"domain_scores_gemma":[0.99978334,0.000046574558,0.000053191132,0.000014115299,0.00008460759,0.000018220742],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00019209247,0.00042877498,0.00035894394,0.00021889854,0.00036416107,0.0007313615,0.0005325051,0.00034749883,0.001236027],"category_scores_gemma":[0.00057665794,0.00035024353,0.00023774587,0.00031594164,0.00011308903,0.00045898752,0.00021660539,0.0003792985,0.00034078312],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00007017925,0.000031037725,0.00031013688,0.00011682279,0.00001991382,0.000044423636,0.000017287422,0.00197771,0.99413234,0.0001736006,0.00024483804,0.0028617056],"study_design_scores_gemma":[0.000025285617,0.00015997683,0.0010156947,0.000012920715,0.00003117406,0.000047010857,0.000044630808,0.008645702,0.98829585,0.000065132874,0.0016491887,0.0000073278957],"about_ca_topic_score_codex":0.0040303776,"about_ca_topic_score_gemma":0.01340086,"teacher_disagreement_score":0.0040303776,"about_ca_system_score_codex":0.0011984822,"about_ca_system_score_gemma":0.0006609871,"threshold_uncertainty_score":0.008695662},"labels":[],"label_agreement":null},{"id":"W1991567111","doi":"10.1049/el:20058232","title":"Threshold voltage shift compensated active pixel sensor array for digital X-ray imaging in a-Si technology","year":2005,"lang":"en","type":"article","venue":"Electronics Letters","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":16,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Sunnybrook Health Science Centre; University of Toronto; University of Waterloo","funders":"","keywords":"Thin-film transistor; Threshold voltage; Materials science; Optoelectronics; Pixel; Voltage; Amorphous silicon; Transistor; Silicon; Image sensor; Amorphous solid; Active matrix; Electrical engineering; Optics; Physics; Engineering; Nanotechnology; Crystalline silicon","score_opus":0.004883840316159808,"score_gpt":0.19571269611354886,"score_spread":0.19082885579738904,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1991567111","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.5909435,0.0012663335,0.3997011,0.00036189833,0.00025389402,0.00009190005,0.0003940917,0.0029464387,0.0040408405],"genre_scores_gemma":[0.84822357,0.0002905355,0.14855085,0.00013500388,0.000052150186,0.000039930444,0.00013352063,0.000022960674,0.0025515072],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998615,0.000013852175,0.0000068860795,0.00003435267,0.00007251724,0.000010929115],"domain_scores_gemma":[0.9997538,0.000063887885,0.00004456892,0.00002173367,0.000091560825,0.000024455965],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0001619942,0.0002691392,0.0002875559,0.00019890623,0.00015465228,0.00031594525,0.0007501074,0.00043905855,0.0009916244],"category_scores_gemma":[0.0002743699,0.00020243051,0.0001650675,0.00016473589,0.00017688255,0.00046340062,0.00015161248,0.00024646302,0.0003082155],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00014880988,0.000032822893,0.00083202205,0.00006803968,0.000018742665,0.00008375794,0.000023965376,0.0018073461,0.9774039,0.0006915994,0.00053460343,0.018354345],"study_design_scores_gemma":[0.000041525054,0.000547737,0.0025535852,0.0000068053882,0.000056655812,0.0005415217,0.000017584709,0.08384478,0.90940815,0.00029370945,0.0026574594,0.000030458563],"about_ca_topic_score_codex":0.00040519118,"about_ca_topic_score_gemma":0.00069380115,"teacher_disagreement_score":0.0009916244,"about_ca_system_score_codex":0.00029532236,"about_ca_system_score_gemma":0.00024726492,"threshold_uncertainty_score":0.0033172965},"labels":[],"label_agreement":null},{"id":"W1993138721","doi":"10.1889/1.2036434","title":"P‐25: A New Driving Method for a‐Si AMOLED Displays Based on Voltage Feedback","year":2005,"lang":"en","type":"article","venue":"SID Symposium Digest of Technical Papers","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":14,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"IGNIS Innovation (Canada); University of Waterloo","funders":"","keywords":"AMOLED; Backplane; Active matrix; OLED; Materials science; Optoelectronics; Threshold voltage; Voltage; Diode; Amorphous silicon; Overdrive voltage; Silicon; Electrical engineering; Thin-film transistor; Crystalline silicon; Engineering; Transistor; Nanotechnology","score_opus":0.007284833189518063,"score_gpt":0.23424891515105167,"score_spread":0.22696408196153361,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1993138721","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.8475404,0.0022888135,0.13450156,0.00039050216,0.00036107024,0.00014976111,0.0003133285,0.0024381345,0.012016334],"genre_scores_gemma":[0.9498301,0.0005685202,0.042469468,0.00011269799,0.00006375658,0.00005899839,0.00011422682,0.00007290903,0.0067093195],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99989736,0.0000069933567,0.0000045732436,0.000030825842,0.000043846045,0.000016441389],"domain_scores_gemma":[0.99992216,0.000019233961,0.000015706688,0.000010990926,0.000016847667,0.000015097672],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00009508294,0.00024138442,0.00010524576,0.00023014394,0.00023123379,0.0003331425,0.000665682,0.00025133652,0.0014735163],"category_scores_gemma":[0.00015570268,0.00015000624,0.00012886536,0.00009571354,0.00030026634,0.00031457108,0.00023307941,0.00030394839,0.0004421485],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000027005723,0.000016315815,0.0001275624,0.00003516843,0.0000045362244,0.00012199911,0.000035023902,0.0000926615,0.9849546,0.0004337223,0.00042581995,0.013725615],"study_design_scores_gemma":[0.00001131006,0.00019626722,0.00078794203,0.000004634332,0.0000075485154,0.00037782246,0.000014032119,0.002081699,0.9866435,0.00010519303,0.0097556105,0.000014527307],"about_ca_topic_score_codex":0.00060794066,"about_ca_topic_score_gemma":0.0007928325,"teacher_disagreement_score":0.0014735163,"about_ca_system_score_codex":0.00018900965,"about_ca_system_score_gemma":0.00020145698,"threshold_uncertainty_score":0.0049294233},"labels":[],"label_agreement":null},{"id":"W1994972270","doi":"10.1139/p99-035","title":"Dépôt chimique en phase vapeur et à basse pression de couches minces à base de silicium dans un réacteur à lampes halogène","year":2000,"lang":"en","type":"article","venue":"Canadian Journal of Physics","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":false,"route_ca_venue":true,"route_about_ca":false,"ca_institutions":"","funders":"","keywords":"Chemical vapor deposition; Silicon; Polycrystalline silicon; Thin film; Fabrication; Deposition (geology); Silicon nitride; Materials science; Optoelectronics; Analytical Chemistry (journal); Chemical engineering; Nanotechnology; Thin-film transistor; Chemistry; Layer (electronics); Organic chemistry","score_opus":0.008720789470556618,"score_gpt":0.2136771258613429,"score_spread":0.20495633639078628,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1994972270","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9934064,0.00123325,0.0023314946,0.0000627611,0.000032024924,0.000015026767,0.00021047746,0.000115867806,0.0025927504],"genre_scores_gemma":[0.99319357,0.0011214793,0.0013028932,0.000026944484,0.000017367707,0.000020319863,0.00017766918,0.00005026908,0.0040895],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998265,0.00001840763,0.0000041906683,0.00005247463,0.00006546705,0.000033014065],"domain_scores_gemma":[0.9997782,0.00012822892,0.000031069776,0.000012589171,0.00002920378,0.000020717946],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00021741814,0.00039978948,0.00029546316,0.00023501231,0.000355751,0.00040189995,0.00027398617,0.0003980015,0.0029645662],"category_scores_gemma":[0.00031849075,0.00025696013,0.00023046673,0.0001882431,0.0003631024,0.00032556648,0.00014904441,0.000509558,0.00036224473],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00013458563,0.000011450682,0.00022078157,0.000055791403,0.000009089431,0.000081316335,0.000054524055,0.00034198287,0.997695,0.00017655385,0.000054323657,0.0011645444],"study_design_scores_gemma":[0.000010915474,0.00015242305,0.0013652116,0.0000029554685,0.000007554204,0.000045482364,0.000017067909,0.0012283266,0.9958423,0.000033994518,0.0012877086,0.0000060110992],"about_ca_topic_score_codex":0.0032996517,"about_ca_topic_score_gemma":0.0030550356,"teacher_disagreement_score":0.0032996517,"about_ca_system_score_codex":0.00046521352,"about_ca_system_score_gemma":0.0003329269,"threshold_uncertainty_score":0.009917438},"labels":[],"label_agreement":null},{"id":"W1996108079","doi":"10.1063/1.2913320","title":"Staebler–Wronski-like formation of defects at the amorphous-silicon–crystalline silicon interface during illumination","year":2008,"lang":"en","type":"article","venue":"Journal of Applied Physics","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":48,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"","funders":"Institute of Gender and Health","keywords":"Dangling bond; Silicon; Passivation; Materials science; Annealing (glass); Amorphous silicon; Wafer; Crystalline silicon; Amorphous solid; Carrier lifetime; Optoelectronics; Molecular physics; Crystallography; Nanotechnology; Chemistry; Composite material","score_opus":0.010336591219849868,"score_gpt":0.194812288070452,"score_spread":0.18447569685060214,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1996108079","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9962752,0.00035562157,0.0023862624,0.0000115685525,0.000004938977,0.000007304473,0.00015426784,0.00004991311,0.00075490173],"genre_scores_gemma":[0.9982029,0.00012426068,0.00083719287,0.000007485228,0.0000013291781,0.00001102238,0.00013384028,0.0000126504365,0.00066936796],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999167,0.0000061619544,0.0000041624307,0.000026014917,0.000021967555,0.000025081681],"domain_scores_gemma":[0.99981815,0.00006554253,0.00004647723,0.000027853475,0.000028084196,0.000013886758],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00012683157,0.00016602485,0.00017448625,0.00017151544,0.00012705309,0.00026893476,0.00029215505,0.00017053618,0.0010412823],"category_scores_gemma":[0.0003009378,0.00011117065,0.00017266998,0.00018792352,0.00022716181,0.00020733677,0.000089493704,0.00030706433,0.00017826585],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000081113,0.000015407575,0.0011881292,0.00003519444,0.000009076133,0.000105921536,0.00007331459,0.0004250277,0.99523264,0.00021247729,0.000054593558,0.0025668996],"study_design_scores_gemma":[0.000007455225,0.0001002676,0.01607622,0.0000054511816,0.000008907152,0.00013722757,0.00006500582,0.004277287,0.97868735,0.00010653173,0.0005211587,0.0000071798218],"about_ca_topic_score_codex":0.0007572006,"about_ca_topic_score_gemma":0.00073009415,"teacher_disagreement_score":0.0010412823,"about_ca_system_score_codex":0.00027906403,"about_ca_system_score_gemma":0.00010997688,"threshold_uncertainty_score":0.0034834743},"labels":[],"label_agreement":null},{"id":"W1998024038","doi":"10.1116/1.2902958","title":"Operational regimes of the saddle field plasma enhanced chemical vapor deposition system","year":2008,"lang":"en","type":"article","venue":"Journal of Vacuum Science & Technology A Vacuum Surfaces and Films","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Toronto","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Plasma-enhanced chemical vapor deposition; Silane; Thin film; Materials science; Substrate (aquarium); Silicon; Chemical vapor deposition; Microcrystalline silicon; Plasma; Deposition (geology); Microcrystalline; Hydrogen; Analytical Chemistry (journal); Optoelectronics; Chemical engineering; Crystalline silicon; Nanotechnology; Chemistry; Composite material; Physics; Crystallography; Amorphous silicon","score_opus":0.006462330723039709,"score_gpt":0.1926938981909668,"score_spread":0.1862315674679271,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1998024038","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9812965,0.0002274361,0.012586673,0.000100053614,0.00001296042,0.000046788224,0.00013106922,0.0004637033,0.0051348186],"genre_scores_gemma":[0.998135,0.000042400905,0.0012839542,0.000017636718,0.0000042513166,0.000016140804,0.000058564445,0.000011028337,0.00043100366],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9997527,0.000028441847,0.00002140827,0.00005675584,0.0000814083,0.000059210783],"domain_scores_gemma":[0.999561,0.00018751778,0.000058703514,0.000079175144,0.0000763533,0.000037128608],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00029758344,0.0001849887,0.00026734182,0.00032583383,0.00028929432,0.0004993632,0.00047260703,0.00036385102,0.0023636401],"category_scores_gemma":[0.0007494686,0.00015254649,0.00011368326,0.00016773221,0.0004083692,0.00052308146,0.00037942216,0.00027532293,0.00049174647],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0010823315,0.00009862672,0.007735987,0.000112244714,0.000025255098,0.00043721372,0.00074966345,0.004044752,0.9557609,0.005955189,0.0006895631,0.023308234],"study_design_scores_gemma":[0.00013835159,0.0021559745,0.017491937,0.000038182083,0.00004411418,0.0011820928,0.00035606066,0.09285938,0.8696003,0.0037098054,0.012371515,0.000052215455],"about_ca_topic_score_codex":0.0006049751,"about_ca_topic_score_gemma":0.0006376818,"teacher_disagreement_score":0.0023636401,"about_ca_system_score_codex":0.00033234688,"about_ca_system_score_gemma":0.00021653043,"threshold_uncertainty_score":0.007907212},"labels":[],"label_agreement":null},{"id":"W1998734460","doi":"10.1139/cjp-2013-0543","title":"Silicon versus the rest","year":2014,"lang":"en","type":"article","venue":"Canadian Journal of Physics","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":false,"route_ca_venue":true,"route_about_ca":false,"ca_institutions":"","funders":"","keywords":"Silicon; Physics; Semiconductor; Amorphous silicon; Amorphous solid; Optoelectronics; Rest (music); Amorphous semiconductors; Transistor; Thin-film transistor; Nanotechnology; Engineering physics; Thin film; Crystalline silicon; Materials science; Crystallography","score_opus":0.01378935115564926,"score_gpt":0.18430002922304903,"score_spread":0.17051067806739978,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1998734460","genre_codex":"other","genre_gemma":"other","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"other","genre_consensus":"other","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.008553975,0.44398358,0.0035572667,0.054231882,0.020170957,0.000019155052,0.00023576617,0.00016484641,0.4690826],"genre_scores_gemma":[0.20838104,0.42532292,0.0027273775,0.053612035,0.015643964,0.000049792092,0.0004269885,0.00025412065,0.29358178],"study_design_codex":"theoretical_or_conceptual","study_design_gemma":"not_applicable","domain_scores_codex":[0.99975973,0.00004582688,0.0000103806115,0.000040736577,0.00008724033,0.000056101435],"domain_scores_gemma":[0.9998149,0.000070063616,0.000015090137,0.000018760986,0.00003852832,0.00004260338],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0005129143,0.00027953694,0.00035382767,0.00043439606,0.0007098987,0.0020721802,0.0004347024,0.001088358,0.016729323],"category_scores_gemma":[0.00068449386,0.000080449674,0.00020087005,0.00041198847,0.00257688,0.0026846665,0.0010766669,0.0012982943,0.0047262446],"study_design_candidate":"not_applicable","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00014185815,0.00002532159,0.0004918955,0.0010050288,0.00003745566,0.00037943845,0.0008416689,0.0002829253,0.0027815858,0.5758869,0.16209269,0.25603324],"study_design_scores_gemma":[0.0000043565856,0.000029349812,0.00014048707,0.0002785929,0.000006805698,0.0001703415,0.00019413284,0.000028677117,0.0003915765,0.020637259,0.9781146,0.0000038704434],"about_ca_topic_score_codex":0.0019226667,"about_ca_topic_score_gemma":0.0038688707,"teacher_disagreement_score":0.016729323,"about_ca_system_score_codex":0.00091317337,"about_ca_system_score_gemma":0.00089726964,"threshold_uncertainty_score":0.055965185},"labels":[],"label_agreement":null},{"id":"W1998931856","doi":"10.1116/1.1569923","title":"Low temperature crystallization of germanium on plastic by externally applied compressive stress","year":2003,"lang":"en","type":"article","venue":"Journal of Vacuum Science & Technology A Vacuum Surfaces and Films","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":21,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Acadia University","funders":"","keywords":"Materials science; Crystallization; Annealing (glass); Crystallinity; Germanium; Transmission electron microscopy; Composite material; Compressive strength; Stress (linguistics); Scanning electron microscope; Substrate (aquarium); Crystallography; Silicon; Metallurgy; Chemical engineering; Nanotechnology; Chemistry","score_opus":0.003634894833363714,"score_gpt":0.19117769809057766,"score_spread":0.18754280325721395,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1998931856","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9982893,0.00016968016,0.0005327914,0.000019604082,0.000010849535,0.000006712401,0.000046874706,0.000017107304,0.0009070012],"genre_scores_gemma":[0.9982476,0.00016170474,0.0005402293,0.000006024458,0.0000039324,0.00000550164,0.00005314287,0.0000146004695,0.00096740545],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99992764,0.0000057716015,0.00000402789,0.000013045623,0.00002479757,0.000024724224],"domain_scores_gemma":[0.99990594,0.000025118876,0.00002416041,0.000015632164,0.000013283316,0.000015923873],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00007681775,0.00025739463,0.0001990041,0.0001360584,0.00018219715,0.00023694728,0.00018203618,0.00012977095,0.00067430525],"category_scores_gemma":[0.00019042929,0.00015522713,0.00017375145,0.0001395155,0.00026386703,0.00015728637,0.00034606666,0.00024418972,0.00013145918],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00003448125,0.0000048792817,0.00010579767,0.000025908494,0.0000024559781,0.00007039079,0.000025840536,0.00015662715,0.99908507,0.00007924136,0.000017027702,0.00039224775],"study_design_scores_gemma":[0.0000052361565,0.000049992905,0.0009641588,0.000003103557,0.000003738788,0.00005474751,0.000013983953,0.0009718649,0.997551,0.00002134697,0.00035778302,0.0000031049694],"about_ca_topic_score_codex":0.001240614,"about_ca_topic_score_gemma":0.002329004,"teacher_disagreement_score":0.001240614,"about_ca_system_score_codex":0.00029979492,"about_ca_system_score_gemma":0.00019476634,"threshold_uncertainty_score":0.0024667978},"labels":[],"label_agreement":null},{"id":"W1999767948","doi":"10.1116/1.1722376","title":"Amorphous silicon shift registers for display drivers","year":2004,"lang":"en","type":"article","venue":"Journal of Vacuum Science & Technology A Vacuum Surfaces and Films","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":5,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Shift register; Materials science; Amorphous silicon; Metastability; Silicon; Amorphous solid; Graphics; Optoelectronics; Threshold voltage; Voltage; Electrical engineering; Computer science; Electronic circuit; Computer graphics (images); Crystalline silicon; Engineering; Transistor; Physics; Crystallography; Chemistry","score_opus":0.007734772802051545,"score_gpt":0.21958849951129983,"score_spread":0.2118537267092483,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1999767948","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.42442065,0.026509155,0.39673078,0.0018996964,0.0016992106,0.00053452735,0.0018980999,0.014390556,0.13191733],"genre_scores_gemma":[0.88113475,0.0036108587,0.06282151,0.0005591045,0.0004178914,0.00010838522,0.00062849605,0.00024144596,0.05047767],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.999874,0.000015366673,0.000009868419,0.000022912616,0.00005445362,0.000023368271],"domain_scores_gemma":[0.9997907,0.00007100754,0.000035680398,0.000044419794,0.000044442295,0.000013782334],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00013779686,0.00029659265,0.00014074479,0.0002890426,0.00031757177,0.0008766188,0.00079041376,0.00043739885,0.013927878],"category_scores_gemma":[0.00043366788,0.00015949787,0.00016084968,0.0002549865,0.00015040928,0.0008460697,0.00032725156,0.0004614002,0.0030634734],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00070362707,0.00009763367,0.0011277192,0.0005487928,0.00005516439,0.0005961693,0.00019336834,0.0029910468,0.67129916,0.057687595,0.0135083515,0.25119135],"study_design_scores_gemma":[0.00011784953,0.000890329,0.0017310844,0.00013010092,0.00012436773,0.0015146266,0.00016248367,0.021215199,0.70789117,0.012946622,0.25321415,0.0000620089],"about_ca_topic_score_codex":0.00022852542,"about_ca_topic_score_gemma":0.0005869424,"teacher_disagreement_score":0.013927878,"about_ca_system_score_codex":0.00030980638,"about_ca_system_score_gemma":0.00023770236,"threshold_uncertainty_score":0.046593368},"labels":[],"label_agreement":null},{"id":"W2000025984","doi":"10.1103/physrevb.77.155204","title":"Point defects in pure amorphous silicon and their role in structural relaxation: A tight-binding molecular-dynamics study","year":2008,"lang":"en","type":"article","venue":"Physical Review B","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":19,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Western University; Université de Montréal; Regroupement Québécois sur les Matériaux de Pointe","funders":"","keywords":"Relaxation (psychology); Crystallographic defect; Materials science; Amorphous silicon; Dangling bond; Amorphous solid; Molecular dynamics; Annihilation; Condensed matter physics; Silicon; Crystallography; Chemical physics; Molecular physics; Physics; Chemistry; Crystalline silicon; Quantum mechanics","score_opus":0.0076311133018412995,"score_gpt":0.22431817488510414,"score_spread":0.21668706158326284,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2000025984","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9952638,0.00031778865,0.0028298327,0.00015056522,0.0000095509995,0.000014462664,0.00007535325,0.000033935263,0.0013047538],"genre_scores_gemma":[0.9974879,0.00032389013,0.0015701599,0.000034942525,0.000006579144,0.00002450882,0.00011377955,0.000014492413,0.00042382834],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9999199,0.000013791254,0.0000030829285,0.000012444361,0.000019154691,0.00003162647],"domain_scores_gemma":[0.99969804,0.00015453322,0.000033044344,0.000024883093,0.000038103586,0.000051420986],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0003375822,0.00042400055,0.00059391535,0.00045647644,0.00070006534,0.00073324854,0.000841228,0.0006469212,0.0013125563],"category_scores_gemma":[0.0006648375,0.00036695827,0.000456528,0.00043035232,0.0012352478,0.0009762043,0.00040388753,0.00083980797,0.00010282995],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0003629571,0.00050721946,0.0053294823,0.00022672775,0.00019698935,0.00042339836,0.0004046908,0.9276855,0.038569085,0.019936297,0.00061292667,0.005744818],"study_design_scores_gemma":[0.000063239546,0.00008837039,0.0011195696,0.000008072181,0.000022433422,0.000012758905,0.00004571175,0.99529934,0.0020745744,0.0010377815,0.00021534206,0.000012759465],"about_ca_topic_score_codex":0.016063688,"about_ca_topic_score_gemma":0.010123782,"teacher_disagreement_score":0.016063688,"about_ca_system_score_codex":0.00091527496,"about_ca_system_score_gemma":0.00063607085,"threshold_uncertainty_score":0.0319404},"labels":[],"label_agreement":null},{"id":"W2000036049","doi":"10.1557/opl.2012.1180","title":"Thin-Film Phototransistor with nc-Si:H/a-Si:H Bilayer Channel","year":2012,"lang":"en","type":"article","venue":"MRS Proceedings","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"University of Waterloo","keywords":"Materials science; Optoelectronics; Photodiode; Amorphous silicon; Thin-film transistor; Chemical vapor deposition; Thin film; Biasing; Silicon; Layer (electronics); Crystalline silicon; Voltage; Nanotechnology","score_opus":0.011756645327121331,"score_gpt":0.18982449429216275,"score_spread":0.1780678489650414,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2000036049","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99612707,0.00020803322,0.0009967692,0.00016016187,0.00008312456,0.000022337688,0.0002968335,0.00021025412,0.0018954243],"genre_scores_gemma":[0.99645317,0.00015784957,0.00177872,0.000031787255,0.000027954304,0.000019389305,0.00011383258,0.000017175435,0.0014002401],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99990165,0.0000065179565,0.000006310586,0.000024818786,0.000033866592,0.000026841648],"domain_scores_gemma":[0.99982184,0.000031795134,0.000021494243,0.000028898574,0.000057249257,0.000038788094],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000106245745,0.0002108539,0.0004109545,0.00021243478,0.0004590286,0.00038968146,0.00054648035,0.0004600519,0.0014306273],"category_scores_gemma":[0.00025637136,0.00016370649,0.00021234305,0.00028645727,0.00022441187,0.00046632192,0.00027771067,0.0003265158,0.0003366935],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00020911245,0.000025653597,0.00028911926,0.00005811641,0.000009079204,0.00019800806,0.000032006013,0.0001282604,0.9976185,0.00015029764,0.00041055208,0.00087145733],"study_design_scores_gemma":[0.00006677026,0.00029699723,0.0035680225,0.000016868391,0.00004668772,0.00027759565,0.00007297566,0.007447142,0.98675275,0.0001068395,0.0013301807,0.00001711879],"about_ca_topic_score_codex":0.0033928002,"about_ca_topic_score_gemma":0.004803667,"teacher_disagreement_score":0.0033928002,"about_ca_system_score_codex":0.0004940524,"about_ca_system_score_gemma":0.00040457695,"threshold_uncertainty_score":0.0067460537},"labels":[],"label_agreement":null},{"id":"W2000269144","doi":"10.1063/1.3195641","title":"Effect of threshold voltage instability on field effect mobility in thin film transistors deduced from constant current measurements","year":2009,"lang":"en","type":"article","venue":"Applied Physics Letters","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":7,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo; IGNIS Innovation (Canada)","funders":"","keywords":"Threshold voltage; Hysteresis; Transistor; Materials science; Voltage; Optoelectronics; Thin-film transistor; Instability; Electron mobility; Field-effect transistor; Condensed matter physics; Transient (computer programming); Electrical engineering; Mechanics; Physics; Computer science; Nanotechnology; Engineering","score_opus":0.0130766930062841,"score_gpt":0.22749745117597878,"score_spread":0.21442075816969466,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2000269144","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.96955365,0.0022319986,0.025969595,0.00020779716,0.00007706723,0.000044445642,0.00016300919,0.00022531637,0.0015271943],"genre_scores_gemma":[0.99606895,0.00047606646,0.003092229,0.000027464215,0.0000129547925,0.000015785321,0.000054746466,0.000023383564,0.00022841855],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.999385,0.00011186539,0.000046699188,0.00014890931,0.00025325955,0.000054260785],"domain_scores_gemma":[0.9965838,0.002613391,0.00029794517,0.00019238399,0.00025307963,0.000059425412],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00074464746,0.00040948996,0.000561707,0.0006477195,0.00035741195,0.0004931711,0.00051395135,0.0007055737,0.0007509714],"category_scores_gemma":[0.0044231317,0.00022640394,0.00025477217,0.00040084234,0.00046863663,0.00073713175,0.0004951115,0.0007731841,0.00020954318],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0002893822,0.000024025967,0.0020594408,0.00011651814,0.00002635507,0.0005646464,0.00029510944,0.0013841174,0.98598677,0.00040118638,0.00006684409,0.008785644],"study_design_scores_gemma":[0.0000074387945,0.0003327403,0.004732864,0.000034313744,0.000038234943,0.00067258376,0.00007499279,0.016221486,0.9769543,0.00032944873,0.0005788717,0.000022780889],"about_ca_topic_score_codex":0.0004925099,"about_ca_topic_score_gemma":0.00055316923,"teacher_disagreement_score":0.0007509714,"about_ca_system_score_codex":0.00035757793,"about_ca_system_score_gemma":0.00012656602,"threshold_uncertainty_score":0.003938079},"labels":[],"label_agreement":null},{"id":"W2002045031","doi":"10.1063/1.3422473","title":"<i>In situ</i> laser crystallization of amorphous silicon: Controlled nanosecond studies in the dynamic transmission electron microscope","year":2010,"lang":"en","type":"article","venue":"Applied Physics Letters","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":29,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Institut National de la Recherche Scientifique; McGill University","funders":"","keywords":"Materials science; Nucleation; Crystallization; Transmission electron microscopy; Amorphous solid; Nanosecond; Amorphous silicon; Silicon; Laser; Optoelectronics; Nanotechnology; Thin film; Optics; Crystalline silicon; Chemical engineering; Crystallography; Chemistry; Physics","score_opus":0.005842936615810194,"score_gpt":0.21843742866245477,"score_spread":0.21259449204664457,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2002045031","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9803083,0.0007694457,0.0156286,0.00010400532,0.00002611039,0.0000382758,0.0003429887,0.00010639054,0.0026759373],"genre_scores_gemma":[0.9853823,0.0006665795,0.012357133,0.00002527465,0.000013417148,0.000039988303,0.00014161466,0.000047071208,0.0013266982],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999318,0.0000075470552,0.0000054769343,0.000015489923,0.000026763066,0.000012873946],"domain_scores_gemma":[0.9998104,0.00009359407,0.000038292426,0.00001803064,0.000030575768,0.000009103283],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00013508098,0.00017710515,0.00015210206,0.00016608567,0.00023345438,0.00024975705,0.00027201374,0.00012844763,0.0008500921],"category_scores_gemma":[0.00025500206,0.00012393844,0.000099768644,0.00015216805,0.0003025087,0.00029227286,0.00014281932,0.00033840034,0.000091945134],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000016022488,0.0000059263652,0.000112570655,0.000020858357,0.0000017390065,0.000032861215,0.00003236665,0.000115782845,0.99880767,0.00012570589,0.000029340279,0.0006989904],"study_design_scores_gemma":[0.000002632903,0.000025367599,0.0006536624,0.000001260538,0.0000022338297,0.000056208923,0.000014323975,0.0012291733,0.99748373,0.000035093995,0.0004940683,0.0000021331823],"about_ca_topic_score_codex":0.0011729364,"about_ca_topic_score_gemma":0.0018261308,"teacher_disagreement_score":0.0011729364,"about_ca_system_score_codex":0.00033437868,"about_ca_system_score_gemma":0.00012932452,"threshold_uncertainty_score":0.0028437972},"labels":[],"label_agreement":null},{"id":"W2002053588","doi":"10.1063/1.2817822","title":"The dependence of the Tauc and Cody optical gaps associated with hydrogenated amorphous silicon on the film thickness: αl Experimental limitations and the impact of curvature in the Tauc and Cody plots","year":2007,"lang":"en","type":"article","venue":"Journal of Applied Physics","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":85,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Windsor; University of Regina","funders":"Natural Sciences and Engineering Research Council of Canada; CMC Microsystems","keywords":"Amorphous silicon; Amorphous solid; Silicon; Materials science; Curvature; Refractive index; Amorphous semiconductors; Band gap; Optics; Condensed matter physics; Optoelectronics; Crystalline silicon; Crystallography; Physics; Chemistry; Mathematics; Geometry","score_opus":0.011983309198263672,"score_gpt":0.2222373952331189,"score_spread":0.2102540860348552,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2002053588","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9815062,0.0013101582,0.01087022,0.0002226066,0.000017156428,0.000026648147,0.00028514312,0.00014223334,0.005619602],"genre_scores_gemma":[0.99727184,0.0002571145,0.0021005787,0.00002204581,0.000002969083,0.000022011967,0.00008096278,0.000015312306,0.00022722909],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9996389,0.000053266747,0.000024382014,0.00006749678,0.00017827524,0.000037556623],"domain_scores_gemma":[0.9943116,0.004458209,0.00051131414,0.00031750792,0.00036064742,0.00004063349],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0011774095,0.00028894068,0.00022364676,0.00053748075,0.00028146003,0.00060013845,0.0006192895,0.00040591336,0.0009200685],"category_scores_gemma":[0.0039089187,0.0002591543,0.00015121198,0.00036092312,0.0008147175,0.0008254031,0.00037878286,0.0007773923,0.00016624885],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00085879053,0.00008085696,0.011489554,0.00074317737,0.000046851077,0.0006642327,0.000651667,0.020650206,0.9409228,0.00961676,0.00030981956,0.013965288],"study_design_scores_gemma":[0.000014765984,0.0001906596,0.007218113,0.000052150634,0.000015392736,0.00018483172,0.000120773424,0.026484799,0.96406233,0.0010710468,0.00056748354,0.00001767737],"about_ca_topic_score_codex":0.00084410043,"about_ca_topic_score_gemma":0.00092623173,"teacher_disagreement_score":0.0011774095,"about_ca_system_score_codex":0.0004748305,"about_ca_system_score_gemma":0.00019765203,"threshold_uncertainty_score":0.0062268376},"labels":[],"label_agreement":null},{"id":"W2002246880","doi":"10.1002/pip.423","title":"Front and rear silicon‐nitride‐passivated multicrystalline silicon solar cells with an efficiency of 18.1%","year":2002,"lang":"en","type":"article","venue":"Progress in Photovoltaics Research and Applications","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":17,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"","funders":"Institute of Gender and Health; Bundesministerium für Bildung, Wissenschaft, Forschung und Technologie; Bayer","keywords":"Passivation; Silicon nitride; Plasma-enhanced chemical vapor deposition; Materials science; Silicon; Optoelectronics; Nitride; Solar cell; Crystalline silicon; Aluminium; Nanotechnology; Layer (electronics); Composite material","score_opus":0.035271161084294594,"score_gpt":0.2884521782723852,"score_spread":0.2531810171880906,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2002246880","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9913322,0.0007672355,0.0032759367,0.000029652985,0.000033809687,0.000026299793,0.00044218817,0.00016739714,0.0039253733],"genre_scores_gemma":[0.9837803,0.00039905615,0.008353829,0.0000286443,0.000011745175,0.000030108735,0.0005213657,0.00006014547,0.006814758],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998099,0.000008169618,0.0000100292245,0.000036958125,0.00009244532,0.000042467604],"domain_scores_gemma":[0.99992263,0.000014175547,0.000009599314,0.000019501937,0.0000228661,0.00001109351],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00013693994,0.00022082753,0.00048159028,0.00017484066,0.00017924728,0.0003758033,0.00043476024,0.00040486667,0.0017601121],"category_scores_gemma":[0.00012002918,0.00027045983,0.00028786584,0.0001324676,0.00012546523,0.00021176136,0.00022181492,0.00030284462,0.00077807414],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00004542917,0.000008452718,0.00006942015,0.0000114399845,0.0000029028301,0.000017397359,0.000005579249,0.000057992525,0.99856216,0.000037033646,0.000029923936,0.0011522918],"study_design_scores_gemma":[0.0000087847975,0.00005545506,0.0009975873,0.0000014929107,0.000007257733,0.000065183194,0.0000042723054,0.00090719596,0.9972541,0.0000145622125,0.0006821112,0.0000020069547],"about_ca_topic_score_codex":0.0004926003,"about_ca_topic_score_gemma":0.0012553206,"teacher_disagreement_score":0.0017601121,"about_ca_system_score_codex":0.00023202863,"about_ca_system_score_gemma":0.00014066952,"threshold_uncertainty_score":0.0058882236},"labels":[],"label_agreement":null},{"id":"W2002977263","doi":"10.1139/cjp-2013-0627","title":"Impact of doped microcrystalline silicon oxide layers on crystalline silicon surface passivation","year":2014,"lang":"en","type":"article","venue":"Canadian Journal of Physics","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":11,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":false,"route_ca_venue":true,"route_about_ca":false,"ca_institutions":"","funders":"","keywords":"Passivation; Doping; Silicon; Microcrystalline; Materials science; Boron; Wafer; Crystalline silicon; Oxide thin-film transistor; Impurity; Layer (electronics); Silicon oxide; Oxide; Analytical Chemistry (journal); Chemical engineering; Nanotechnology; Optoelectronics; Crystallography; Metallurgy; Silicon nitride; Chemistry","score_opus":0.01033851953814537,"score_gpt":0.21041132670166537,"score_spread":0.20007280716352,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2002977263","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9970963,0.0015433544,0.00036608265,0.000019906389,0.00001545528,0.000010438316,0.000106949745,0.000020453981,0.0008209601],"genre_scores_gemma":[0.998256,0.0006626426,0.00048994605,0.000016762362,0.0000039306146,0.0000041700036,0.0000778271,0.000012504625,0.00047622103],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9997987,0.000017089144,0.000010915544,0.000040016224,0.00008026133,0.0000530707],"domain_scores_gemma":[0.99963033,0.00018488205,0.00006749364,0.000032374537,0.00005796245,0.000027013819],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00015056683,0.00026493738,0.00034005698,0.00020480565,0.0001675527,0.0004046288,0.0002194429,0.00031300203,0.0013014389],"category_scores_gemma":[0.00039920016,0.00020288498,0.00023800443,0.00014101803,0.00022639573,0.00021190396,0.00020644805,0.0002452869,0.00014984241],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00014293876,0.000010825334,0.0010877586,0.00009417892,0.00003143397,0.0000749171,0.00003704537,0.00037395235,0.99602544,0.000035910634,0.000023395949,0.0020621133],"study_design_scores_gemma":[0.0000069895414,0.00037159203,0.006669395,0.000007889054,0.000034549746,0.00008519107,0.000051769497,0.00055544777,0.99167514,0.000015953254,0.00052198546,0.000004161341],"about_ca_topic_score_codex":0.0013861854,"about_ca_topic_score_gemma":0.0027156,"teacher_disagreement_score":0.0013861854,"about_ca_system_score_codex":0.00026703256,"about_ca_system_score_gemma":0.000215857,"threshold_uncertainty_score":0.0043537617},"labels":[],"label_agreement":null},{"id":"W2003989425","doi":"10.1063/1.3518069","title":"Nanocrystallization of amorphous germanium films observed with nanosecond temporal resolution","year":2010,"lang":"en","type":"article","venue":"Applied Physics Letters","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":42,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McGill University; Institut National de la Recherche Scientifique","funders":"","keywords":"Germanium; Nucleation; Materials science; Fluence; Crystallite; Crystallization; Amorphous solid; Devitrification; Silicon; Transmission electron microscopy; Nanosecond; Semiconductor; Amorphous silicon; Optoelectronics; Laser; Analytical Chemistry (journal); Crystallography; Nanotechnology; Optics; Chemical engineering; Chemistry; Crystalline silicon; Metallurgy","score_opus":0.008820461656324967,"score_gpt":0.16721649395842636,"score_spread":0.1583960323021014,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2003989425","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9922569,0.00042109482,0.0045444057,0.000054068325,0.000016976222,0.000011915321,0.00039322773,0.00013220207,0.0021691942],"genre_scores_gemma":[0.9950741,0.0002392512,0.0033371355,0.000021830665,0.000004426523,0.000016625008,0.00021717463,0.000022005745,0.0010674475],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99995613,0.0000012020213,0.0000020480502,0.000014229999,0.000016799993,0.000009558699],"domain_scores_gemma":[0.9998964,0.000036153036,0.000022965416,0.000011517908,0.000021603144,0.000011319179],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000048656686,0.000103471175,0.0001255046,0.0001583296,0.00014273055,0.00023026751,0.00018796473,0.00014010994,0.00091845],"category_scores_gemma":[0.00015201012,0.00010338605,0.000094317795,0.00012545804,0.00012830613,0.0001921509,0.00010769417,0.00028807943,0.00013052263],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00003803438,0.000010284155,0.0005346642,0.000024021452,0.0000057937814,0.00012216796,0.00003686264,0.0003107313,0.9968246,0.00020483062,0.00008916825,0.0017988519],"study_design_scores_gemma":[0.000013906723,0.00005891435,0.012478902,0.000007208489,0.000011079743,0.00023239959,0.000056663263,0.012566956,0.97296345,0.00012594179,0.0014749349,0.000009625449],"about_ca_topic_score_codex":0.0029546532,"about_ca_topic_score_gemma":0.004033472,"teacher_disagreement_score":0.0029546532,"about_ca_system_score_codex":0.0005960583,"about_ca_system_score_gemma":0.00014386575,"threshold_uncertainty_score":0.005874932},"labels":[],"label_agreement":null},{"id":"W2004247832","doi":"10.1016/j.jnoncrysol.2007.10.089","title":"Polycrystalline silicon with large disk-shaped grains by Ni-mediated crystallization of doped amorphous silicon","year":2008,"lang":"en","type":"article","venue":"Journal of Non-Crystalline Solids","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":10,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Crystallization; Materials science; Doping; Amorphous silicon; Crystallite; Silicon; Polycrystalline silicon; Grain growth; Nanocrystalline silicon; Amorphous solid; Dopant; Grain size; Crystallography; Chemical engineering; Composite material; Metallurgy; Crystalline silicon; Optoelectronics; Chemistry; Thin-film transistor","score_opus":0.007709806544462896,"score_gpt":0.20575212076843208,"score_spread":0.19804231422396917,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2004247832","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99473405,0.000306986,0.0020123567,0.00007122445,0.000035848174,0.000030955383,0.00013052457,0.000115393894,0.0025626135],"genre_scores_gemma":[0.99659663,0.00013966412,0.0018915054,0.00000880724,0.0000074818045,0.000015800088,0.0000961985,0.00003827045,0.001205607],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999144,0.0000056441218,0.000007537976,0.000022951685,0.000028506169,0.000021042577],"domain_scores_gemma":[0.99989223,0.00002380471,0.000025953224,0.000026224792,0.000015010034,0.000016713475],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00010462207,0.00021466392,0.00041028377,0.00012690827,0.00028997168,0.00048658904,0.00033637029,0.00018939028,0.00066285976],"category_scores_gemma":[0.00019892596,0.00028693423,0.00015439649,0.00020533282,0.00026147635,0.0002911057,0.00032585094,0.00037440888,0.00022124778],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00007811026,0.000012774934,0.0001462075,0.00003777299,0.0000049645005,0.00006365278,0.00004593495,0.00019071363,0.99837327,0.00025236938,0.0000842309,0.0007099535],"study_design_scores_gemma":[0.000032929976,0.00005607248,0.0008112296,0.0000041971266,0.000008219785,0.00009022972,0.000035303783,0.0029397649,0.99498653,0.00005210331,0.00097613764,0.0000072336725],"about_ca_topic_score_codex":0.0015922224,"about_ca_topic_score_gemma":0.004714745,"teacher_disagreement_score":0.0015922224,"about_ca_system_score_codex":0.0005520457,"about_ca_system_score_gemma":0.000405068,"threshold_uncertainty_score":0.0040053725},"labels":[],"label_agreement":null},{"id":"W2004875325","doi":"10.1016/j.jnoncrysol.2005.11.149","title":"High hole and electron mobilities in nanocrystalline silicon thin-film transistors","year":2006,"lang":"en","type":"article","venue":"Journal of Non-Crystalline Solids","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":17,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Materials science; Thin-film transistor; Electron mobility; Optoelectronics; Silicon; Subthreshold slope; Schottky barrier; Threshold voltage; Transistor; Field effect; PMOS logic; Nanotechnology; Electrical engineering; Layer (electronics); Voltage","score_opus":0.004182454828228725,"score_gpt":0.20117072738658157,"score_spread":0.19698827255835283,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2004875325","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9923794,0.0013117926,0.0017348425,0.00031466424,0.00008505545,0.0000143693105,0.00016954575,0.00018585262,0.0038044434],"genre_scores_gemma":[0.9966217,0.00028555223,0.0012711167,0.0000392405,0.000024298617,0.000009632115,0.0000805948,0.000031913896,0.001635964],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998785,0.000008881359,0.000007936198,0.000026332924,0.00005189646,0.00002645364],"domain_scores_gemma":[0.9995859,0.00019557674,0.000039964118,0.00004555127,0.000087310975,0.00004565304],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00019700384,0.00017925753,0.00044681857,0.00026528974,0.00026048353,0.0006831907,0.00046801276,0.00040727697,0.0016797323],"category_scores_gemma":[0.0006893711,0.00018293803,0.00012405786,0.00024133034,0.00027641395,0.00062651146,0.00029183406,0.00033586094,0.0004105993],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00040469636,0.000036285965,0.00070858665,0.00009381788,0.000020306245,0.00029951657,0.00012270035,0.0005392458,0.990342,0.002903017,0.00075471145,0.003775107],"study_design_scores_gemma":[0.00008890663,0.0002059027,0.0030467426,0.000019595285,0.000035319244,0.00033014864,0.000101450154,0.010319415,0.9819918,0.0015537572,0.002290004,0.000017093742],"about_ca_topic_score_codex":0.0010056022,"about_ca_topic_score_gemma":0.0019813217,"teacher_disagreement_score":0.0016797323,"about_ca_system_score_codex":0.0005560857,"about_ca_system_score_gemma":0.00030429807,"threshold_uncertainty_score":0.005619228},"labels":[],"label_agreement":null},{"id":"W2005060747","doi":"10.1116/1.2167084","title":"Temperature characterization of a-Si:H thin-film transistor for analog circuit design using analog hardware description language modeling","year":2006,"lang":"en","type":"article","venue":"Journal of Vacuum Science & Technology A Vacuum Surfaces and Films","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":3,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Thin-film transistor; Transistor; Materials science; Characterization (materials science); Optoelectronics; Ranging; Voltage; Threshold voltage; Electrical engineering; Computer science; Nanotechnology; Engineering","score_opus":0.020200574073380672,"score_gpt":0.22138388069108872,"score_spread":0.20118330661770806,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2005060747","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.2548549,0.0007239625,0.72621,0.00036013804,0.000096042255,0.00034831456,0.002218415,0.008431432,0.006756879],"genre_scores_gemma":[0.89883465,0.00035944258,0.09776065,0.000079352736,0.000012905973,0.000297645,0.0006459923,0.00011799631,0.0018913983],"study_design_codex":"bench_or_experimental","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9997273,0.000059616556,0.000028314013,0.000028828681,0.00013089881,0.000024996538],"domain_scores_gemma":[0.99922395,0.00040844327,0.00006627754,0.000102759135,0.00018935135,0.000009233798],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0004367761,0.00033354608,0.00021941861,0.00029164937,0.000211612,0.00048522544,0.000567812,0.00023417086,0.0040306016],"category_scores_gemma":[0.0011472333,0.00013475484,0.00029204087,0.0002231124,0.00018917407,0.0006291706,0.00012240163,0.00038936883,0.0004103628],"study_design_candidate":"simulation_or_modeling","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00065758737,0.00020039243,0.0033890235,0.0014658396,0.00017041893,0.0011211293,0.00049604557,0.21915306,0.6150742,0.014209163,0.0063382145,0.13772495],"study_design_scores_gemma":[0.00005939118,0.00038083922,0.0012543711,0.000047563764,0.00003419254,0.00021324205,0.0000683037,0.67269844,0.3168552,0.0020109557,0.006348271,0.000029230394],"about_ca_topic_score_codex":0.0017049912,"about_ca_topic_score_gemma":0.002081538,"teacher_disagreement_score":0.0040306016,"about_ca_system_score_codex":0.00047501293,"about_ca_system_score_gemma":0.0006100054,"threshold_uncertainty_score":0.013483763},"labels":[],"label_agreement":null},{"id":"W2005110985","doi":"10.1088/0022-3727/33/4/320","title":"Modelling of photoinduced discharge of photoreceptors under pulsed photoexcitation: small and large signal xerographic time-of-flight analysis","year":2000,"lang":"en","type":"article","venue":"Journal of Physics D Applied Physics","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":10,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Saskatchewan","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Photoexcitation; Rate equation; Trapping; Electric field; Ohm; Nonlinear system; Saturation (graph theory); Physics; Millisecond; Materials science; Chemistry; Atomic physics; Classical mechanics; Kinetics; Quantum mechanics; Mathematics","score_opus":0.015545785857718757,"score_gpt":0.19289735667868102,"score_spread":0.17735157082096226,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2005110985","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.87984663,0.00054145395,0.11178691,0.0002431346,0.000022195354,0.00007995759,0.00042418166,0.00036291438,0.0066926097],"genre_scores_gemma":[0.99197876,0.00023960332,0.0051473873,0.00001906665,0.0000035722485,0.0000445725,0.00009772664,0.00003083586,0.0024384444],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99995756,0.0000057837196,0.0000022248564,0.000009497171,0.000016420425,0.000008395551],"domain_scores_gemma":[0.99986804,0.000074578886,0.000015846541,0.0000105904965,0.000022769063,0.000008126143],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000127411,0.00025665897,0.00023421083,0.00015766732,0.00018683635,0.00035281075,0.000688041,0.000735275,0.0010607152],"category_scores_gemma":[0.0004054868,0.00014484678,0.0003635516,0.00016431606,0.00031669135,0.0005221492,0.00014805811,0.00040376376,0.00015532486],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0001081174,0.000045993904,0.0012273354,0.00017050977,0.000025214431,0.00062619126,0.00016807977,0.8554023,0.13222808,0.004820405,0.0002828838,0.0048948186],"study_design_scores_gemma":[0.000003987574,0.000024651019,0.0006292556,0.0000026540154,0.0000029941064,0.00005771613,0.000013022139,0.9913693,0.007332009,0.0003998677,0.00015895652,0.000005618781],"about_ca_topic_score_codex":0.0037602838,"about_ca_topic_score_gemma":0.0020932378,"teacher_disagreement_score":0.0037602838,"about_ca_system_score_codex":0.00069828593,"about_ca_system_score_gemma":0.00042484593,"threshold_uncertainty_score":0.0074768066},"labels":[],"label_agreement":null},{"id":"W2005836545","doi":"10.1063/1.2999590","title":"Non-ohmic contact resistance and field-effect mobility in nanocrystalline silicon thin film transistors","year":2008,"lang":"en","type":"article","venue":"Applied Physics Letters","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":23,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo; University of British Columbia","funders":"","keywords":"Ohmic contact; Contact resistance; Materials science; Silicon; Transistor; Optoelectronics; Thin-film transistor; Thin film; Nanocrystalline material; Field-effect transistor; Electron mobility; Condensed matter physics; Nanotechnology; Electrical engineering; Voltage; Physics; Engineering","score_opus":0.005735347438564267,"score_gpt":0.18068221807655604,"score_spread":0.17494687063799177,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2005836545","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.83849955,0.005458705,0.15025845,0.00024565883,0.00009501207,0.00006768696,0.00018574222,0.00043387644,0.004755261],"genre_scores_gemma":[0.98204654,0.0010476864,0.015740203,0.00002441017,0.000022801589,0.000034137796,0.00004008415,0.00003226518,0.0010118042],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.999747,0.00003550325,0.000015608497,0.00006652983,0.00011309336,0.000022220545],"domain_scores_gemma":[0.99931,0.00044873345,0.00010197456,0.000071107956,0.00005211521,0.000016163718],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0003865357,0.00049884414,0.00042013606,0.0005387081,0.00025931743,0.0005391501,0.00065802265,0.0005688963,0.00043691442],"category_scores_gemma":[0.0020568636,0.00025292838,0.00017901977,0.00030630032,0.0005510335,0.0007773523,0.0002692588,0.0004250967,0.00017049049],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00016583923,0.000067658846,0.0039396863,0.00026434596,0.000067033165,0.0014191003,0.0004112622,0.02861362,0.93264484,0.014199633,0.00034963904,0.017857322],"study_design_scores_gemma":[0.000037762133,0.00020755154,0.0073808664,0.00005742085,0.00007121213,0.0014920036,0.00014564395,0.541615,0.4349819,0.011469996,0.0024745085,0.000066070956],"about_ca_topic_score_codex":0.0025564313,"about_ca_topic_score_gemma":0.0026137515,"teacher_disagreement_score":0.0025564313,"about_ca_system_score_codex":0.00064937474,"about_ca_system_score_gemma":0.00033578105,"threshold_uncertainty_score":0.0050831437},"labels":[],"label_agreement":null},{"id":"W2007071026","doi":"10.1038/nphoton.2007.147","title":"Sensitive solution-processed visible-wavelength photodetectors","year":2007,"lang":"en","type":"article","venue":"Nature Photonics","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":483,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Toronto","funders":"","keywords":"Photodetector; Photodetection; Optoelectronics; Photodiode; Visible spectrum; Materials science; Optics; Photoconductivity; Image sensor; Silicon; Semiconductor; Sensitivity (control systems); Infrared; Physics; Electronic engineering","score_opus":0.005143382664696964,"score_gpt":0.21740241672561145,"score_spread":0.21225903406091448,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2007071026","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.92401403,0.007118391,0.047821186,0.001043411,0.0010287766,0.00015417607,0.0010129766,0.0013074282,0.016499527],"genre_scores_gemma":[0.94813454,0.0029287334,0.02647774,0.0004695255,0.000118318836,0.000069334776,0.00061551796,0.00013381477,0.021052536],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99971646,0.000025813453,0.000010999139,0.00008707747,0.00011046397,0.000049179303],"domain_scores_gemma":[0.99977034,0.000075503754,0.000037752146,0.000023676295,0.00006562996,0.000027069003],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00021986237,0.00043768872,0.00039248492,0.00032090562,0.00022520668,0.00091509655,0.00092657685,0.00094427617,0.002609229],"category_scores_gemma":[0.00046763843,0.00040906275,0.00019435579,0.00029067308,0.00026820117,0.0008792133,0.00033963076,0.0011206206,0.0012581468],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000048633185,0.000020134023,0.000052411684,0.00003636331,0.00000598967,0.000027410695,0.000017532006,0.00007264209,0.9965959,0.00035967186,0.00035944334,0.002403937],"study_design_scores_gemma":[0.000010052738,0.000041506893,0.00014540924,0.0000046987807,0.0000059980257,0.00004647355,0.000014002332,0.0012995161,0.9966736,0.000111494875,0.0016418762,0.000005327738],"about_ca_topic_score_codex":0.00035738436,"about_ca_topic_score_gemma":0.0011110556,"teacher_disagreement_score":0.002609229,"about_ca_system_score_codex":0.0005263278,"about_ca_system_score_gemma":0.0003346778,"threshold_uncertainty_score":0.008728743},"labels":[],"label_agreement":null},{"id":"W2007284954","doi":"10.1116/1.582179","title":"120 °C fabrication technology for a-Si:H thin film transistors on flexible polyimide substrates","year":2000,"lang":"en","type":"article","venue":"Journal of Vacuum Science & Technology A Vacuum Surfaces and Films","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":38,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Materials science; Thin-film transistor; Silicon nitride; Silane; Passivation; Amorphous solid; Chemical vapor deposition; Substrate (aquarium); Layer (electronics); Amorphous silicon; Optoelectronics; Etching (microfabrication); Fabrication; Silicon; Plasma-enhanced chemical vapor deposition; Nitride; Dry etching; Thin film; Buffered oxide etch; Dielectric; Reactive-ion etching; Nanotechnology; Crystalline silicon; Composite material; Crystallography; Chemistry","score_opus":0.010672157696447814,"score_gpt":0.23064044703795883,"score_spread":0.21996828934151103,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2007284954","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.62886846,0.0046639047,0.29870364,0.00064849824,0.0011837471,0.0012798101,0.0044772313,0.0060569076,0.05411779],"genre_scores_gemma":[0.69104266,0.0045025353,0.25945187,0.00038328473,0.00017802353,0.0015211551,0.0038750186,0.0006985062,0.03834697],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998186,0.0000057275965,0.000012564612,0.00005690278,0.0000830347,0.000023234872],"domain_scores_gemma":[0.9998574,0.000025887855,0.000027905937,0.000038574002,0.000036499052,0.000013689249],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00016690197,0.000512202,0.00023533005,0.00040499985,0.0002891636,0.00027503434,0.0007415137,0.0003318628,0.006667864],"category_scores_gemma":[0.0002098869,0.00042384496,0.0002601207,0.00034186916,0.00014455013,0.00040017176,0.00025241598,0.0008635107,0.0029716329],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000014229194,0.000013526077,0.00011883196,0.00009039801,0.000005682926,0.000093633746,0.000023230194,0.000062289415,0.9938361,0.00026696242,0.00054746773,0.004927586],"study_design_scores_gemma":[0.000011224182,0.00011321296,0.0027590955,0.000016162607,0.000013819758,0.00039408405,0.000017017019,0.0013033802,0.9740016,0.000106214065,0.021250123,0.000014090178],"about_ca_topic_score_codex":0.00044750224,"about_ca_topic_score_gemma":0.0007678984,"teacher_disagreement_score":0.006667864,"about_ca_system_score_codex":0.0003051778,"about_ca_system_score_gemma":0.00022269964,"threshold_uncertainty_score":0.022306204},"labels":[],"label_agreement":null},{"id":"W2008801882","doi":"10.1063/1.1778478","title":"An analytical density of states and joint density of states analysis of amorphous semiconductors","year":2004,"lang":"en","type":"article","venue":"Journal of Applied Physics","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":34,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Regina","funders":"Natural Sciences and Engineering Research Council of Canada; CMC Microsystems","keywords":"Density of states; Joint (building); Local density of states; Probability density function; Amorphous silicon; Amorphous solid; Semiconductor; Amorphous semiconductors; Joint probability distribution; Condensed matter physics; Statistical physics; Physics; Materials science; Silicon; Quantum mechanics; Mathematics; Chemistry; Statistics; Crystallography; Crystalline silicon; Metallurgy; Engineering","score_opus":0.012361858796117373,"score_gpt":0.21763244422824302,"score_spread":0.20527058543212565,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2008801882","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.0973074,0.0013742716,0.8824952,0.00031238314,0.00003898066,0.000047396927,0.000108574015,0.00017951739,0.018136192],"genre_scores_gemma":[0.9324305,0.0013295541,0.061051097,0.00011188235,0.00007903636,0.0001141981,0.00015369922,0.0000728497,0.0046571568],"study_design_codex":"theoretical_or_conceptual","study_design_gemma":"theoretical_or_conceptual","domain_scores_codex":[0.9996152,0.00009749171,0.000013271932,0.000034647655,0.00018850516,0.00005095377],"domain_scores_gemma":[0.9987344,0.0008065997,0.00009215892,0.00012523399,0.00020497153,0.000036564543],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0010101522,0.00036514262,0.0004802098,0.0012585981,0.00051208655,0.0009062863,0.0009013557,0.0006565317,0.0021005606],"category_scores_gemma":[0.0043969764,0.0002720882,0.00059190433,0.00086355273,0.0011780743,0.0018024988,0.0007488414,0.00067989377,0.000309861],"study_design_candidate":"theoretical_or_conceptual","study_design_consensus":"theoretical_or_conceptual","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00002187448,0.000048136,0.0006562438,0.00007672183,0.000023180839,0.00013645629,0.00012657329,0.26841757,0.00541528,0.714724,0.00086776115,0.009486105],"study_design_scores_gemma":[0.0000017681582,0.000009598136,0.00021156979,0.000007872437,0.0000055009327,0.000057656354,0.000018515348,0.9159756,0.00063904456,0.08246952,0.0005961562,0.0000071807845],"about_ca_topic_score_codex":0.0014803692,"about_ca_topic_score_gemma":0.0009348784,"teacher_disagreement_score":0.0021005606,"about_ca_system_score_codex":0.0007173554,"about_ca_system_score_gemma":0.00052738364,"threshold_uncertainty_score":0.0070270896},"labels":[],"label_agreement":null},{"id":"W2009448801","doi":"10.1063/1.2123374","title":"Density of states in tritiated amorphous silicon obtained with the constant photocurrent method","year":2005,"lang":"en","type":"article","venue":"Journal of Applied Physics","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":5,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Toronto","funders":"","keywords":"Dangling bond; Amorphous silicon; Silicon; Materials science; Fermi level; Density of states; Amorphous solid; Annealing (glass); Nanocrystalline silicon; Atomic physics; Analytical Chemistry (journal); Condensed matter physics; Chemistry; Crystalline silicon; Nuclear physics; Crystallography; Electron; Optoelectronics; Physics; Metallurgy; Organic chemistry","score_opus":0.009294988007775545,"score_gpt":0.22131554156917319,"score_spread":0.21202055356139765,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2009448801","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.97015554,0.0009579296,0.02556998,0.000047829493,0.000028739776,0.000026192458,0.00038199953,0.00019759484,0.0026342487],"genre_scores_gemma":[0.988967,0.0006236131,0.00886642,0.00001969805,0.0000081546505,0.000022277414,0.00022988093,0.00003027683,0.0012327486],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99972874,0.000021917936,0.000010121628,0.000085488966,0.00011825436,0.000035459394],"domain_scores_gemma":[0.99965584,0.00013107047,0.000060009173,0.000049447295,0.000085748914,0.000017785887],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0002582476,0.00019279838,0.00023215698,0.0009448324,0.0001646159,0.0004009001,0.00059808476,0.00031023702,0.0017684932],"category_scores_gemma":[0.000450048,0.0001850298,0.00020191852,0.00075928407,0.0004027088,0.00038221848,0.00016274602,0.000537145,0.00022796437],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000044502605,0.000022877852,0.0005980243,0.000043025604,0.00001023474,0.00005800499,0.000068117275,0.00029237993,0.99478334,0.0005130202,0.000038038754,0.0035285468],"study_design_scores_gemma":[0.000004477019,0.000087951834,0.0031518564,0.000004592657,0.000015195171,0.00008838048,0.00003339421,0.0060895393,0.99002516,0.00013588421,0.0003549787,0.00000848873],"about_ca_topic_score_codex":0.0010816143,"about_ca_topic_score_gemma":0.0015841147,"teacher_disagreement_score":0.0017684932,"about_ca_system_score_codex":0.00050303654,"about_ca_system_score_gemma":0.0001517862,"threshold_uncertainty_score":0.005916238},"labels":[],"label_agreement":null},{"id":"W2009688437","doi":"10.1063/1.1568148","title":"Spectral dependence of the squared average optical transition matrix element associated with hydrogenated amorphous silicon","year":2003,"lang":"en","type":"article","venue":"Applied Physics Letters","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":16,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Regina","funders":"","keywords":"Silicon; Photon energy; Condensed matter physics; Materials science; Matrix (chemical analysis); Photon; Band gap; Amorphous solid; Amorphous silicon; Semiconductor; Matrix element; Molecular physics; Atomic physics; Physics; Chemistry; Optics; Crystalline silicon; Optoelectronics; Crystallography","score_opus":0.005220814827183266,"score_gpt":0.17414601015992814,"score_spread":0.1689251953327449,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2009688437","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.937949,0.000095646275,0.057995025,0.00008669746,0.000007715035,0.00001889035,0.00008189959,0.00018427584,0.0035807856],"genre_scores_gemma":[0.9962345,0.00004045439,0.0032465,0.0000062753465,0.0000026665211,0.0000056878243,0.000053233423,0.000012595425,0.00039822093],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998802,0.000028563156,0.0000033530437,0.000021276697,0.000052411877,0.000014219802],"domain_scores_gemma":[0.9988894,0.0007584035,0.000097617434,0.00006896606,0.0001571115,0.000028508222],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00033370865,0.0002643215,0.00011299277,0.0003423532,0.00014641801,0.00034433987,0.0002814917,0.00023616555,0.00087849016],"category_scores_gemma":[0.0018021633,0.00013608875,0.00016470195,0.00019427242,0.00046369692,0.00046231152,0.00017381342,0.00031654644,0.00012410767],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0002894296,0.000072905365,0.005894796,0.000112341026,0.000047359557,0.00030617943,0.00013976854,0.13167635,0.8246527,0.026582867,0.00015667641,0.01006861],"study_design_scores_gemma":[0.00001142322,0.00014553705,0.004595835,0.000006649146,0.000014739682,0.0002920998,0.000034604695,0.7469748,0.24319668,0.004421532,0.00027561327,0.000030509309],"about_ca_topic_score_codex":0.0008953626,"about_ca_topic_score_gemma":0.001035546,"teacher_disagreement_score":0.0008953626,"about_ca_system_score_codex":0.00038784053,"about_ca_system_score_gemma":0.00017998973,"threshold_uncertainty_score":0.002938807},"labels":[],"label_agreement":null},{"id":"W2010159655","doi":"10.1116/1.582249","title":"Intrinsic thin film stresses in multilayered imaging pixels","year":2000,"lang":"en","type":"article","venue":"Journal of Vacuum Science & Technology A Vacuum Surfaces and Films","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":16,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Materials science; Optoelectronics; Layer (electronics); Silicon; Substrate (aquarium); Amorphous solid; Thin film; Amorphous silicon; Thin-film transistor; Stress (linguistics); Composite material; Nanotechnology; Crystalline silicon; Crystallography","score_opus":0.005760267462659391,"score_gpt":0.2148694533362501,"score_spread":0.2091091858735907,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2010159655","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.92676336,0.0025229638,0.06477981,0.00018968093,0.00008067215,0.00003559495,0.00016083036,0.0004824517,0.0049845376],"genre_scores_gemma":[0.98564154,0.0005162215,0.0116009135,0.000025903326,0.000031929038,0.000015375748,0.00006054925,0.00003727831,0.0020703224],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99987423,0.0000096187905,0.000007736037,0.000032667307,0.000055936678,0.000019849844],"domain_scores_gemma":[0.9998056,0.000035447752,0.00007988997,0.00001786051,0.000040639457,0.000020644433],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00012086083,0.00024732976,0.00019786737,0.00024362718,0.00020250154,0.0006018629,0.00037052858,0.0003324927,0.0007329108],"category_scores_gemma":[0.00046450496,0.00032448288,0.00015815321,0.0002359776,0.00029387337,0.0005823311,0.000385613,0.00022295755,0.00015381518],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00021143217,0.000060265054,0.0068870354,0.00014774456,0.000036317644,0.001107415,0.00039151768,0.038998485,0.8979657,0.0070751514,0.0008635375,0.046255387],"study_design_scores_gemma":[0.000050993858,0.0004116405,0.034273874,0.000068340356,0.00008010053,0.0014088956,0.00028804582,0.39168546,0.551126,0.009411122,0.0111081805,0.00008742614],"about_ca_topic_score_codex":0.0010320353,"about_ca_topic_score_gemma":0.001099255,"teacher_disagreement_score":0.0010320353,"about_ca_system_score_codex":0.0005537025,"about_ca_system_score_gemma":0.00020658057,"threshold_uncertainty_score":0.004017353},"labels":[],"label_agreement":null},{"id":"W2010173558","doi":"10.1023/b:jmse.0000031593.62734.3a","title":"An empirical density of states and joint density of states analysis of hydrogenated amorphous silicon: a review","year":2004,"lang":"en","type":"review","venue":"Journal of Materials Science Materials in Electronics","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":37,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Regina","funders":"Natural Sciences and Engineering Research Council of Canada; CMC Microsystems","keywords":"Density of states; Condensed matter physics; Amorphous silicon; Dielectric; Valence (chemistry); Silicon; Dielectric function; Thermal conduction; Materials science; Statistical physics; Physics; Quantum mechanics; Crystalline silicon; Optoelectronics","score_opus":0.02084190423120503,"score_gpt":0.3010734256996621,"score_spread":0.2802315214684571,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2010173558","genre_codex":"review","genre_gemma":"review","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"review","genre_consensus":"review","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.006689665,0.95956683,0.028988523,0.0004788104,0.0001919632,0.000023944389,0.00016604082,0.00006737566,0.003826905],"genre_scores_gemma":[0.047762044,0.93231916,0.017813005,0.00017790963,0.00029620106,0.000053135715,0.00028118954,0.000028050801,0.0012693603],"study_design_codex":"design_other","study_design_gemma":"not_applicable","domain_scores_codex":[0.9997912,0.000038790236,0.000017335233,0.000044071952,0.000098035605,0.000010601972],"domain_scores_gemma":[0.9994136,0.00035605306,0.000056465728,0.000043250977,0.00012354756,0.0000070392493],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00075735175,0.00063466723,0.0017354682,0.001534864,0.00024654318,0.00080018496,0.0018792087,0.00075979397,0.00094048097],"category_scores_gemma":[0.0017692912,0.00035406588,0.00056894886,0.003079132,0.0007357173,0.0019600014,0.00050264347,0.0007464756,0.00038234913],"study_design_candidate":"not_applicable","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0000699499,0.00014058517,0.0019029612,0.012042791,0.00028477446,0.0002840481,0.00012752041,0.029263172,0.0053116158,0.13288374,0.008946506,0.80874234],"study_design_scores_gemma":[0.00004816575,0.00036501858,0.011041951,0.0046811197,0.00071240606,0.0032780818,0.00042981489,0.15190543,0.018002786,0.3487703,0.46051922,0.0002458266],"about_ca_topic_score_codex":0.0010226702,"about_ca_topic_score_gemma":0.0013315432,"teacher_disagreement_score":0.0018792087,"about_ca_system_score_codex":0.0006217924,"about_ca_system_score_gemma":0.00067137444,"threshold_uncertainty_score":0.0045114756},"labels":[],"label_agreement":null},{"id":"W2010525146","doi":"10.1109/ipcon.2012.6359284","title":"High-mobility low-power flexible ZnO thin film transistors on plastic substrates","year":2012,"lang":"en","type":"article","venue":"","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of British Columbia","funders":"","keywords":"Thin-film transistor; Transistor; Optoelectronics; Materials science; Electron mobility; Electronics; Power (physics); Electrical engineering; Nanotechnology; Engineering; Physics; Layer (electronics)","score_opus":0.010196231396937124,"score_gpt":0.1987157437394504,"score_spread":0.18851951234251327,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2010525146","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9624044,0.0023232747,0.02566021,0.0005227753,0.00021753508,0.000051243896,0.00037538513,0.00026269362,0.00818257],"genre_scores_gemma":[0.98208046,0.0011797508,0.012205186,0.00005548944,0.000030543404,0.000018955681,0.000106646105,0.0000333175,0.0042895116],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99991965,0.0000040442624,0.000003740417,0.000024687271,0.000032113145,0.00001585909],"domain_scores_gemma":[0.9999324,0.000023954539,0.000015649104,0.0000059592994,0.000010962554,0.000011085824],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00005953069,0.00026990366,0.00020172876,0.00012308222,0.00018114378,0.00028165037,0.0005579072,0.00023166079,0.0010750818],"category_scores_gemma":[0.0001684138,0.00010788072,0.0001458399,0.00019887247,0.00020684094,0.00044413054,0.00016947264,0.00021024443,0.000294361],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000025967836,0.0000054241987,0.00012261081,0.00004505522,0.0000036318056,0.00017684941,0.000020839156,0.000095692594,0.99723357,0.00012407113,0.000075685144,0.0020706898],"study_design_scores_gemma":[0.000014368844,0.00012228145,0.0019899288,0.000009574416,0.000013452414,0.00034415378,0.00004456763,0.0013779247,0.99305916,0.00007708458,0.0029381681,0.000009436386],"about_ca_topic_score_codex":0.0009431842,"about_ca_topic_score_gemma":0.0024101061,"teacher_disagreement_score":0.0010750818,"about_ca_system_score_codex":0.00027219145,"about_ca_system_score_gemma":0.00007978979,"threshold_uncertainty_score":0.0035965443},"labels":[],"label_agreement":null},{"id":"W2011029401","doi":"10.1109/jdt.2011.2164894","title":"TFTs With High Overlay Alignment for Integration of Flexible Display Backplanes","year":2012,"lang":"en","type":"article","venue":"Journal of Display Technology","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo; IGNIS Innovation (Canada)","funders":"","keywords":"Backplane; Thin-film transistor; Materials science; Overlay; Optoelectronics; Fabrication; Amorphous silicon; Fusible alloy; Transistor; Silicon; Nanotechnology; Electrical engineering; Computer science; Computer hardware; Crystalline silicon; Composite material; Engineering","score_opus":0.009156716172030458,"score_gpt":0.22566683171591576,"score_spread":0.2165101155438853,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2011029401","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.95262897,0.0008861652,0.04201184,0.00012007219,0.00007993988,0.00004174789,0.0002549323,0.00049917155,0.0034771108],"genre_scores_gemma":[0.9709509,0.00039490347,0.026317712,0.000036842797,0.000025059277,0.000023442706,0.00021389854,0.000051317387,0.001985885],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998976,0.000006966652,0.0000073650117,0.000021680175,0.000043929515,0.000022324113],"domain_scores_gemma":[0.99991405,0.000014656776,0.000023668525,0.000015046078,0.000020826432,0.000011603291],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0000704917,0.00025746383,0.00016061854,0.0001696576,0.0001658116,0.00028181338,0.0003199394,0.0002337027,0.0012459044],"category_scores_gemma":[0.00018517861,0.00012641537,0.00018052822,0.00014937876,0.000108624256,0.00029273887,0.00021817237,0.00028983792,0.00049805996],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000016215625,0.000004992881,0.0001229179,0.000014807885,0.0000028831532,0.000054021428,0.00001365899,0.000114151095,0.9973515,0.00006111275,0.000046160025,0.002197661],"study_design_scores_gemma":[0.0000065506674,0.000102728576,0.0014385598,0.000002553489,0.000009720058,0.00016079855,0.000020738162,0.0017112191,0.9943076,0.000032099004,0.0022025262,0.0000050804474],"about_ca_topic_score_codex":0.0006181149,"about_ca_topic_score_gemma":0.0008363449,"teacher_disagreement_score":0.0012459044,"about_ca_system_score_codex":0.00023951278,"about_ca_system_score_gemma":0.00008544202,"threshold_uncertainty_score":0.0041680336},"labels":[],"label_agreement":null},{"id":"W2012312025","doi":"10.1117/12.567419","title":"Bias-induced long-term transient in a-Si:H thin film transistors","year":2004,"lang":"en","type":"article","venue":"Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Thin-film transistor; Materials science; Amorphous silicon; Transient (computer programming); Transistor; Optoelectronics; Threshold voltage; Metastability; Diode; Dangling bond; Relaxation (psychology); Amorphous solid; OLED; Silicon; Voltage; Crystalline silicon; Electrical engineering; Computer science; Physics; Nanotechnology; Crystallography; Chemistry","score_opus":0.017029280373330506,"score_gpt":0.22125673456854572,"score_spread":0.2042274541952152,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2012312025","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.95536846,0.0006400978,0.04143606,0.00014539354,0.000057857385,0.000035012083,0.00014302412,0.00027301276,0.001901056],"genre_scores_gemma":[0.9978802,0.0001740732,0.0013002311,0.000013072671,0.0000067501946,0.000013126689,0.000026783398,0.000015084367,0.00057077635],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999225,0.000008824615,0.0000036385816,0.000017464627,0.000029218916,0.000018320043],"domain_scores_gemma":[0.9998405,0.00008868018,0.000024865098,0.000012461198,0.000023237839,0.000010183685],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00019355779,0.0002563447,0.00025331622,0.00017686855,0.00015860355,0.00025671846,0.00046558416,0.00057687535,0.0007050762],"category_scores_gemma":[0.00047439485,0.0001566897,0.00039863907,0.00016704622,0.00037007988,0.0004931697,0.00014971773,0.00031073965,0.000098300734],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00025198923,0.000093200375,0.0025750622,0.00021465668,0.00006728482,0.0010258546,0.0002534836,0.4546467,0.53070873,0.004242553,0.000285517,0.005634933],"study_design_scores_gemma":[0.000022322036,0.00017798861,0.0013146054,0.000008507962,0.000027035694,0.00011883132,0.000025214367,0.9217723,0.07536524,0.00069662236,0.0004561236,0.000015226052],"about_ca_topic_score_codex":0.0022243962,"about_ca_topic_score_gemma":0.0014612867,"teacher_disagreement_score":0.0022243962,"about_ca_system_score_codex":0.0006997409,"about_ca_system_score_gemma":0.0002999453,"threshold_uncertainty_score":0.0050770044},"labels":[],"label_agreement":null},{"id":"W2012415961","doi":"10.1002/pssa.200778883","title":"Indium oxide thin‐film transistor by reactive ion beam assisted deposition","year":2008,"lang":"en","type":"article","venue":"physica status solidi (a)","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":14,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Fundação para a Ciência e a Tecnologia","keywords":"Materials science; Thin-film transistor; Amorphous solid; Thin film; Electron beam physical vapor deposition; Crystallinity; Optoelectronics; Ion beam; Oxide; Indium; Microcrystalline; Evaporation; Nanotechnology; Ion; Composite material; Chemistry; Metallurgy; Crystallography","score_opus":0.011303089457826444,"score_gpt":0.2044796103458831,"score_spread":0.19317652088805667,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2012415961","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9367101,0.0055938843,0.040628094,0.00042085128,0.00024867457,0.00010909864,0.0008475282,0.0016850338,0.013756696],"genre_scores_gemma":[0.96210283,0.0022838935,0.028680626,0.0000969901,0.000035029432,0.000053466105,0.0004766964,0.000082856524,0.006187561],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999018,0.000008413605,0.00000695947,0.00002415729,0.00004403418,0.000014800569],"domain_scores_gemma":[0.9999385,0.000016461396,0.000013814125,0.000010783197,0.000015339378,0.0000050482113],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00013281986,0.0003010816,0.00025592736,0.00017656626,0.00011443087,0.00033164266,0.00050469034,0.00019619855,0.0010721812],"category_scores_gemma":[0.0001897677,0.00017103204,0.00013788741,0.00017210684,0.0001933667,0.00022858643,0.00012365088,0.00029769525,0.0005117262],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000008216302,0.0000030181095,0.000030155132,0.000025656404,0.0000019776378,0.000030521296,0.000007789611,0.000035533496,0.9986777,0.000082558785,0.000082147955,0.0010146371],"study_design_scores_gemma":[0.000009042087,0.00005561456,0.00045729845,0.000004060438,0.00001109852,0.00016418897,0.0000049474165,0.0012410756,0.9943885,0.000033435903,0.0036260944,0.0000046300606],"about_ca_topic_score_codex":0.00054471614,"about_ca_topic_score_gemma":0.00097971,"teacher_disagreement_score":0.0010721812,"about_ca_system_score_codex":0.00021963776,"about_ca_system_score_gemma":0.00015883829,"threshold_uncertainty_score":0.003586769},"labels":[],"label_agreement":null},{"id":"W2014058070","doi":"10.1063/1.4821235","title":"Light induced changes in the amorphous—crystalline silicon heterointerface","year":2013,"lang":"en","type":"article","venue":"Journal of Applied Physics","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":44,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Toronto","funders":"","keywords":"Materials science; Amorphous solid; Metastability; Silicon; Amorphous silicon; Doping; Crystalline silicon; Condensed matter physics; Optoelectronics; Crystallography; Chemistry","score_opus":0.01325165410186724,"score_gpt":0.19936759110879865,"score_spread":0.1861159370069314,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2014058070","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9976413,0.0003416688,0.0007962332,0.000013132386,0.000008436318,0.000010145405,0.00014613487,0.000037023812,0.0010059462],"genre_scores_gemma":[0.9985246,0.0001369148,0.0004219942,0.00001804104,0.000002653441,0.000009778071,0.00012222747,0.000013390454,0.00075054605],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99991226,0.000006345801,0.0000038163744,0.00002196867,0.000036156027,0.000019493687],"domain_scores_gemma":[0.99974245,0.000108250075,0.00004307595,0.00002261762,0.000056437835,0.000027106818],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00011016844,0.0002150427,0.00014777025,0.00024054789,0.00017208174,0.00027388168,0.000219151,0.0002759092,0.0017191259],"category_scores_gemma":[0.00022146771,0.00015427436,0.00017658276,0.00013969948,0.00020577988,0.00020652385,0.00012251793,0.00038328615,0.00021528722],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000033198918,0.00001030938,0.0002115534,0.000011327617,0.0000042332167,0.000026842235,0.000014379608,0.000041285723,0.9989656,0.000023523737,0.000009228348,0.0006484142],"study_design_scores_gemma":[0.0000048459538,0.00012525955,0.007434141,0.0000021882581,0.0000062731037,0.00006718435,0.000028776552,0.0006299705,0.9914643,0.000025795383,0.00020851512,0.0000026562827],"about_ca_topic_score_codex":0.0005770301,"about_ca_topic_score_gemma":0.0006396357,"teacher_disagreement_score":0.0017191259,"about_ca_system_score_codex":0.00024276462,"about_ca_system_score_gemma":0.00011287204,"threshold_uncertainty_score":0.0057510138},"labels":[],"label_agreement":null},{"id":"W2016663284","doi":"10.1063/1.373653","title":"Bandwidth considerations in modulated and transient photoconductivity measurements to determine localized state distributions","year":2000,"lang":"en","type":"article","venue":"Journal of Applied Physics","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":7,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Toronto","funders":"","keywords":"Photoconductivity; Bandwidth (computing); Transient (computer programming); Transient response; Optoelectronics; Amorphous silicon; Materials science; Semiconductor; Silicon; Computer science; Telecommunications; Electrical engineering; Engineering; Crystalline silicon","score_opus":0.02772896951416651,"score_gpt":0.2283468944321112,"score_spread":0.2006179249179447,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2016663284","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.7965585,0.0005614682,0.20126097,0.00014695308,0.000015604923,0.00003813907,0.000059011094,0.00033931417,0.0010201568],"genre_scores_gemma":[0.9846651,0.0001551699,0.01494472,0.000013254013,0.0000026592518,0.00003075957,0.000028957127,0.00001865671,0.0001405798],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99956375,0.0001402283,0.000025058129,0.00007015037,0.00016340653,0.00003749726],"domain_scores_gemma":[0.9973686,0.002020569,0.0001673998,0.00028656505,0.00012932607,0.000027449742],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0013426756,0.00023217646,0.0002478602,0.00038912985,0.00029030972,0.00047075775,0.0006427829,0.00045436097,0.0004369804],"category_scores_gemma":[0.00942542,0.00023610835,0.0001639511,0.0003152355,0.0007500884,0.00089532725,0.00049049605,0.0006316906,0.00009145998],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00058157765,0.00008928986,0.0056612217,0.00018268086,0.000047388305,0.00017792685,0.00045561502,0.06780107,0.8765443,0.01091024,0.00007382466,0.037474744],"study_design_scores_gemma":[0.00002754527,0.0003860267,0.010846579,0.000049974886,0.000035013283,0.00021282441,0.00015383837,0.31237218,0.66910416,0.006101495,0.000658959,0.000051399682],"about_ca_topic_score_codex":0.0008706175,"about_ca_topic_score_gemma":0.0012999442,"teacher_disagreement_score":0.0013426756,"about_ca_system_score_codex":0.00047629495,"about_ca_system_score_gemma":0.00019939196,"threshold_uncertainty_score":0.0071008205},"labels":[],"label_agreement":null},{"id":"W2017234333","doi":"10.1117/12.668924","title":"Use of metameric filters for future interference security image structures","year":2006,"lang":"en","type":"article","venue":"Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":7,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Polytechnique Montréal","funders":"Natural Sciences and Engineering Research Council of Canada; Fonds Québécois de la Recherche sur la Nature et les Technologies","keywords":"Computer science; Interference (communication); Property (philosophy); Image (mathematics); Optics; Optical filter; Readability; Computer vision; Artificial intelligence; Algorithm; Telecommunications; Physics","score_opus":0.010744775984559328,"score_gpt":0.21142896887184015,"score_spread":0.20068419288728082,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2017234333","genre_codex":"empirical","genre_gemma":"methods","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"methods","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.5917219,0.006034212,0.36369765,0.00063198846,0.0005557071,0.00019501685,0.0002782623,0.0015604541,0.03532483],"genre_scores_gemma":[0.8078698,0.001247247,0.18180493,0.00028024625,0.00009902002,0.000057110556,0.0001244669,0.00007594474,0.008441299],"study_design_codex":"bench_or_experimental","study_design_gemma":"not_applicable","domain_scores_codex":[0.9998647,0.00002066874,0.0000101484375,0.00003533293,0.00004337673,0.000025819152],"domain_scores_gemma":[0.99968886,0.00009683707,0.00006594992,0.00007204313,0.000054069744,0.00002222907],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00022507315,0.00042487204,0.0002057789,0.00036621722,0.00022120854,0.0005692209,0.00048745755,0.00040979494,0.002408512],"category_scores_gemma":[0.00037496255,0.00017769549,0.00021785371,0.00020148848,0.0002786793,0.0005968684,0.00030977742,0.00036411523,0.0006553286],"study_design_candidate":"not_applicable","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00009673147,0.000020312076,0.00034845006,0.00008770002,0.000010471546,0.00012746206,0.000042033123,0.00027761,0.96858793,0.0048090443,0.00024090073,0.025351342],"study_design_scores_gemma":[0.000014724216,0.0002586803,0.0010432886,0.00001901204,0.000026418673,0.00058784074,0.00003134977,0.0028450098,0.97799987,0.00055623514,0.01660029,0.000017365259],"about_ca_topic_score_codex":0.00012497352,"about_ca_topic_score_gemma":0.00036314997,"teacher_disagreement_score":0.002408512,"about_ca_system_score_codex":0.00029521482,"about_ca_system_score_gemma":0.00013278845,"threshold_uncertainty_score":0.008057237},"labels":[],"label_agreement":null},{"id":"W2018322372","doi":"10.1007/s10854-007-9156-1","title":"Photoconductivity decay in silicon spheres in response to impulse light stimulation","year":2007,"lang":"en","type":"article","venue":"Journal of Materials Science Materials in Electronics","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":2,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"SPHERES; Photoconductivity; Impulse (physics); Silicon; Impurity; Materials science; Fabrication; Optoelectronics; Carrier lifetime; Optics; Chemistry; Physics","score_opus":0.008948084021485149,"score_gpt":0.2607646335411894,"score_spread":0.2518165495197042,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2018322372","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9952484,0.00030511775,0.0014404183,0.00008564036,0.000024748277,0.000011344102,0.00021107255,0.000104378036,0.002568902],"genre_scores_gemma":[0.9975902,0.00011495327,0.0003768373,0.000029741308,0.0000068968147,0.0000074659943,0.00018527295,0.000022898204,0.001665798],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99980897,0.000017618411,0.000008794504,0.000037948386,0.00006385291,0.00006280784],"domain_scores_gemma":[0.9991918,0.00046186513,0.00007709389,0.000058253765,0.000112348236,0.00009862104],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0002511784,0.00020109177,0.0002567794,0.00022502917,0.00023023327,0.0004221667,0.0004067714,0.00045343483,0.004108601],"category_scores_gemma":[0.0007723104,0.0001483307,0.00022115983,0.00026576844,0.0004974505,0.00031690457,0.000228149,0.00065469195,0.00042620522],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00072050496,0.000041434705,0.0004987811,0.000046888268,0.000012556383,0.00026451898,0.0001785096,0.00027470177,0.99430084,0.00018355205,0.00014919702,0.003328407],"study_design_scores_gemma":[0.000018004734,0.00028314983,0.008727599,0.0000076150877,0.000010672784,0.00017800667,0.00011579923,0.0033372308,0.9867857,0.00009493815,0.00043062645,0.000010571342],"about_ca_topic_score_codex":0.0028380083,"about_ca_topic_score_gemma":0.0019408236,"teacher_disagreement_score":0.004108601,"about_ca_system_score_codex":0.0005019256,"about_ca_system_score_gemma":0.00034461,"threshold_uncertainty_score":0.013744652},"labels":[],"label_agreement":null},{"id":"W2018984614","doi":"10.1109/led.2013.2290532","title":"Unified Analytic Model for Current–Voltage Behavior in Amorphous Oxide Semiconductor TFTs","year":2014,"lang":"en","type":"article","venue":"IEEE Electron Device Letters","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":29,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"IGNIS Innovation (Canada)","funders":"Engineering and Physical Sciences Research Council","keywords":"Thin-film transistor; Amorphous solid; Materials science; Threshold voltage; Transistor; Amorphous semiconductors; Semiconductor; Optoelectronics; Voltage; Oxide thin-film transistor; Current (fluid); Electronic engineering; Electrical engineering; Silicon; Nanotechnology; Engineering; Layer (electronics); Chemistry; Crystallography","score_opus":0.01882215122080201,"score_gpt":0.24299467060773972,"score_spread":0.22417251938693772,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2018984614","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.0636511,0.001188906,0.91550356,0.00031695442,0.000078954145,0.00010618142,0.00048967556,0.0009172193,0.01774743],"genre_scores_gemma":[0.92400324,0.001683754,0.06023393,0.00022644631,0.00012193851,0.00033284718,0.00042355878,0.00026575997,0.012708503],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9997819,0.000031494834,0.000011938504,0.000033387085,0.00010774606,0.000033552777],"domain_scores_gemma":[0.99978393,0.00006518535,0.000029477887,0.000046463058,0.00006503694,0.000009869883],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00028999627,0.00070835045,0.000730994,0.0009256124,0.00039707814,0.00091282325,0.0017420556,0.0011441823,0.001842883],"category_scores_gemma":[0.0013354835,0.00032040273,0.00083856017,0.000645425,0.0005721661,0.0016509757,0.00038854827,0.0006217853,0.0009005895],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00004924102,0.00006591899,0.0006236643,0.00014270966,0.0000432558,0.0005289418,0.0003144603,0.7432176,0.052203152,0.18723665,0.0018246594,0.0137497345],"study_design_scores_gemma":[0.0000034579944,0.0000137818115,0.00008997417,0.000008510135,0.0000053577114,0.000066660155,0.00001099891,0.98915756,0.00088121236,0.008923058,0.0008330418,0.000006350231],"about_ca_topic_score_codex":0.0029064876,"about_ca_topic_score_gemma":0.002321703,"teacher_disagreement_score":0.0029064876,"about_ca_system_score_codex":0.0009913009,"about_ca_system_score_gemma":0.00076859206,"threshold_uncertainty_score":0.007192433},"labels":[],"label_agreement":null},{"id":"W2019666314","doi":"10.1016/j.tsf.2009.02.108","title":"Stability of indium-oxide thin-film transistors by reactive ion beam assisted deposition","year":2009,"lang":"en","type":"article","venue":"Thin Solid Films","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":13,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Thin-film transistor; Materials science; Optoelectronics; Threshold voltage; Gate dielectric; Gate oxide; Amorphous solid; Transistor; Evaporation; Indium; Oxide; Oxide thin-film transistor; Plasma-enhanced chemical vapor deposition; Layer (electronics); Silicon; Nanotechnology; Voltage; Electrical engineering; Chemistry","score_opus":0.011161283563070666,"score_gpt":0.2188488624011586,"score_spread":0.20768757883808794,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2019666314","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.986857,0.0046319216,0.0052105743,0.00029367764,0.00012663082,0.000027628334,0.00041879882,0.00023875093,0.0021949275],"genre_scores_gemma":[0.9948939,0.0010410406,0.0020756773,0.000040074396,0.000029782806,0.000021059277,0.0002657813,0.000049768387,0.0015829724],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99972445,0.000024965306,0.000018140885,0.000072551855,0.0001267635,0.000033124725],"domain_scores_gemma":[0.9996289,0.00013420005,0.00006364646,0.00005276482,0.00010271993,0.000017765864],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00039002247,0.0003651593,0.00033365708,0.00031333134,0.00035865506,0.00073192874,0.000645728,0.00048015852,0.00091875234],"category_scores_gemma":[0.0008595728,0.00030943914,0.00018000002,0.00025235798,0.00042510885,0.00056688784,0.00023460844,0.0006546286,0.00029207987],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00008909699,0.000008548463,0.00014173606,0.00004030346,0.000009605979,0.0000357639,0.00006464079,0.00015628824,0.99805427,0.00014693309,0.0000972338,0.0011555954],"study_design_scores_gemma":[0.000008640005,0.00006096934,0.00065336155,0.000003690285,0.000012146235,0.000045726596,0.000019192194,0.0017539422,0.99662954,0.0000443872,0.0007617509,0.0000065911727],"about_ca_topic_score_codex":0.0013436434,"about_ca_topic_score_gemma":0.0015845756,"teacher_disagreement_score":0.0013436434,"about_ca_system_score_codex":0.0006172895,"about_ca_system_score_gemma":0.00029147757,"threshold_uncertainty_score":0.004478812},"labels":[],"label_agreement":null},{"id":"W2019897032","doi":"10.1557/proc-0989-a14-05","title":"Noise Performance of High Fill Factor Pixel Architectures for Robust Large-Area Image Sensors using Amorphous Silicon Technology","year":2007,"lang":"en","type":"article","venue":"MRS Proceedings","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":6,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Materials science; Optoelectronics; Amorphous silicon; Pixel; Detector; Design for manufacturability; Transistor; Noise (video); Silicon; Substrate (aquarium); Thin-film transistor; Electronic engineering; Computer science; Nanotechnology; Electrical engineering; Crystalline silicon; Artificial intelligence; Telecommunications; Engineering","score_opus":0.012892557918740458,"score_gpt":0.21123489001053328,"score_spread":0.1983423320917928,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2019897032","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.98826593,0.0004913184,0.009160227,0.00014234529,0.000037495745,0.00001059717,0.000071672766,0.0002461451,0.0015742962],"genre_scores_gemma":[0.99400264,0.00010167985,0.003832731,0.000044785855,0.000020258405,0.000009221974,0.000078257115,0.00002843555,0.0018818893],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99972194,0.000045682373,0.000010873398,0.00005575433,0.00011455921,0.00005119693],"domain_scores_gemma":[0.99929714,0.00029145431,0.00011092604,0.000047250916,0.00020125303,0.000052037958],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00035018794,0.00041584304,0.00037533857,0.000296589,0.0003247351,0.0006386924,0.00066447264,0.00074293604,0.0014138764],"category_scores_gemma":[0.00097578455,0.00021352974,0.0001571399,0.00021193104,0.00024855832,0.00057085924,0.00019628818,0.0002514084,0.00033956423],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0019633528,0.00018610829,0.002507347,0.00009378161,0.00007270237,0.00020071089,0.000118306656,0.016839625,0.9626047,0.002085922,0.00097109436,0.012356222],"study_design_scores_gemma":[0.00010090987,0.0020121252,0.0041411845,0.000018108954,0.000094605835,0.00027109537,0.000063427404,0.19195798,0.7993019,0.00066901674,0.001331687,0.000038000973],"about_ca_topic_score_codex":0.0014691778,"about_ca_topic_score_gemma":0.0029852863,"teacher_disagreement_score":0.0014691778,"about_ca_system_score_codex":0.000688823,"about_ca_system_score_gemma":0.0002985126,"threshold_uncertainty_score":0.00499779},"labels":[],"label_agreement":null},{"id":"W2020239047","doi":"10.1109/cicc.2013.6658556","title":"A novel voltage-programmed pixel circuit with V&lt;inf&gt;T&lt;/inf&gt;-shift compensation for AMOLED displays","year":2013,"lang":"en","type":"article","venue":"","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":4,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"AMOLED; Thin-film transistor; OLED; Capacitor; Diode; Optoelectronics; Materials science; Electrical engineering; Transistor; Threshold voltage; Pixel; Voltage; Computer science; Active matrix; Engineering; Nanotechnology; Artificial intelligence","score_opus":0.014479839035874261,"score_gpt":0.1943833372194453,"score_spread":0.17990349818357104,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2020239047","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.5104283,0.002470774,0.46749687,0.00059103436,0.00047763513,0.00022333936,0.0006000833,0.0063476763,0.01136422],"genre_scores_gemma":[0.88860583,0.00038591097,0.1037951,0.00038079493,0.000118813805,0.000092497176,0.0001970345,0.00007350708,0.0063505364],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998785,0.000009677184,0.0000062995264,0.00004365005,0.000045196226,0.000016637103],"domain_scores_gemma":[0.99990904,0.000021723969,0.000014308677,0.000012438175,0.000031005613,0.000011537821],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00007758026,0.00020160993,0.00021541967,0.00017419468,0.00023663255,0.00038156952,0.0011653788,0.00042837462,0.0023419666],"category_scores_gemma":[0.0001424453,0.00015902225,0.00018602327,0.00018178797,0.00014358494,0.0004906791,0.00019723541,0.00028070083,0.00044604868],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00014654272,0.000040118335,0.00037876767,0.000088130684,0.000019149875,0.00015512652,0.00003767899,0.00052757224,0.94925755,0.0016835964,0.001213766,0.046452034],"study_design_scores_gemma":[0.000044913555,0.0004185212,0.0013242747,0.0000100507505,0.00004615834,0.0006985009,0.000015119696,0.024320588,0.9586925,0.00033533305,0.0140651595,0.000028802846],"about_ca_topic_score_codex":0.00037056653,"about_ca_topic_score_gemma":0.00051241735,"teacher_disagreement_score":0.0023419666,"about_ca_system_score_codex":0.00032321672,"about_ca_system_score_gemma":0.0002049856,"threshold_uncertainty_score":0.007834613},"labels":[],"label_agreement":null},{"id":"W2020264811","doi":"10.1117/12.813886","title":"Characterization of current programmed amorphous silicon active pixel sensor readout circuit for dual mode diagnostic digital x-ray imaging","year":2009,"lang":"en","type":"article","venue":"Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Lakehead University; Thunder Bay Regional Research Institute; University of Waterloo","funders":"","keywords":"Thin-film transistor; Pixel; Optoelectronics; Transistor; Capacitor; Capacitance; Materials science; Image sensor; Threshold voltage; Amorphous silicon; Voltage; Silicon; Optics; Physics; Crystalline silicon; Nanotechnology; Electrode","score_opus":0.011818976770703421,"score_gpt":0.22413314507846532,"score_spread":0.2123141683077619,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2020264811","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9837293,0.0002962977,0.014082604,0.00007370531,0.000027486245,0.00004250553,0.0002352222,0.00025547476,0.0012574679],"genre_scores_gemma":[0.99213564,0.000078995974,0.0065727667,0.000026596472,0.000009375865,0.000022486493,0.00010471027,0.00001677604,0.0010326715],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9997924,0.000019645438,0.000010750256,0.000060822033,0.00009605119,0.000020421247],"domain_scores_gemma":[0.99943465,0.00017921922,0.00008683319,0.000052080122,0.00020474546,0.000042378815],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00013719076,0.00019296884,0.00016950286,0.00017104215,0.00012234585,0.00032140684,0.00051888725,0.00027587818,0.0011552965],"category_scores_gemma":[0.00056814385,0.00008522207,0.00010314314,0.00013349268,0.00016678902,0.00032469578,0.000117891985,0.00016216421,0.0001733513],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000094655006,0.000015319594,0.0010696439,0.00004249867,0.000009668594,0.00009359829,0.000044299602,0.0002946315,0.99330336,0.00015638226,0.00011221153,0.004763704],"study_design_scores_gemma":[0.000012793361,0.00078181137,0.008083822,0.0000068010895,0.00002751089,0.00046658833,0.0000463285,0.010914853,0.97788674,0.000048896167,0.0017152217,0.0000084902695],"about_ca_topic_score_codex":0.00045036303,"about_ca_topic_score_gemma":0.00057348463,"teacher_disagreement_score":0.0011552965,"about_ca_system_score_codex":0.00030257044,"about_ca_system_score_gemma":0.00022231099,"threshold_uncertainty_score":0.0038648248},"labels":[],"label_agreement":null},{"id":"W2020406107","doi":"10.1116/1.1676345","title":"Raman and transmission electron microscopy study of disordered silicon grown by molecular beam epitaxy","year":2004,"lang":"en","type":"article","venue":"Journal of Vacuum Science & Technology A Vacuum Surfaces and Films","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":31,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"National Research Council Canada; Institute for Microstructural Sciences","funders":"","keywords":"Raman spectroscopy; Amorphous solid; Materials science; Transmission electron microscopy; Molecular beam epitaxy; Silicon; Amorphous silicon; Analytical Chemistry (journal); Epitaxy; Crystallite; Crystalline silicon; Crystallography; Layer (electronics); Nanotechnology; Chemistry; Optoelectronics; Optics; Metallurgy","score_opus":0.003354581179642075,"score_gpt":0.2224035442291885,"score_spread":0.21904896304954644,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2020406107","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9939924,0.00056488195,0.0029703723,0.00003564261,0.000013802024,0.000014467542,0.0003185954,0.00006051373,0.0020293186],"genre_scores_gemma":[0.9906254,0.00056537625,0.006131499,0.00002212081,0.00000766076,0.000019872263,0.0005481424,0.000023606888,0.0020563174],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99994624,0.000004058999,0.0000028991985,0.000009326564,0.000026639922,0.000010983301],"domain_scores_gemma":[0.9998573,0.00003840969,0.00002153974,0.000017254402,0.000053652944,0.000011850355],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00009954503,0.00021424392,0.00012103647,0.00027195903,0.0001643355,0.00014651187,0.00022525091,0.00012012652,0.0010356881],"category_scores_gemma":[0.00016223194,0.00014292926,0.00009271728,0.00016965922,0.00012689605,0.00012227855,0.0000969753,0.0001925118,0.00016433863],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000014725704,0.000004926983,0.0002522685,0.000017068485,0.000002930622,0.00006261178,0.000020544177,0.000043274813,0.9989778,0.000105150524,0.000025054786,0.00047368035],"study_design_scores_gemma":[0.000016232063,0.00011990807,0.018906614,0.0000105789995,0.000017173163,0.0006082533,0.000109917724,0.0029389826,0.9749621,0.00011395949,0.002186247,0.000009978536],"about_ca_topic_score_codex":0.001007011,"about_ca_topic_score_gemma":0.0012238934,"teacher_disagreement_score":0.0010356881,"about_ca_system_score_codex":0.00013874895,"about_ca_system_score_gemma":0.00008113535,"threshold_uncertainty_score":0.0034647584},"labels":[],"label_agreement":null},{"id":"W2020662184","doi":"10.1002/pssc.200982779","title":"Optoelectronic properties of a‐Si<sub>1–x</sub>C<sub>x</sub>:H films grown in hydrogen diluted silane‐methane plasma","year":2010,"lang":"en","type":"article","venue":"Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"University of Waterloo","keywords":"Silane; Methane; Plasma; Hydrogen; Materials science; Analytical Chemistry (journal); Silicon; Optoelectronics; Chemistry; Physics; Environmental chemistry; Composite material; Organic chemistry","score_opus":0.02878837411054937,"score_gpt":0.27864205735936026,"score_spread":0.24985368324881088,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2020662184","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99895006,0.00027977393,0.00021388258,0.000021711954,0.0000066902367,0.0000027928127,0.00007650936,0.000010657395,0.00043790642],"genre_scores_gemma":[0.998697,0.00019851874,0.00045852162,0.000010017755,0.000003555871,0.000004747122,0.00008477389,0.000004699824,0.0005382178],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999368,0.000005891706,0.0000033573422,0.000014662869,0.000023844239,0.000015495749],"domain_scores_gemma":[0.9999101,0.000032476255,0.000017766015,0.000007563507,0.00002372857,0.000008385687],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00008821573,0.00016683387,0.00011849338,0.00011307835,0.00012699858,0.00023410926,0.0001667127,0.00022538369,0.0008479903],"category_scores_gemma":[0.00014626021,0.00013725029,0.00009239179,0.00013664203,0.00017256629,0.00015232107,0.000086754655,0.00015156507,0.00014772546],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000035730118,0.0000037751893,0.00022041202,0.00002156036,0.0000044998537,0.000025550022,0.000018153272,0.000058515267,0.9991103,0.000024105251,0.000023397968,0.00045398137],"study_design_scores_gemma":[0.000008650777,0.00015711566,0.0066481293,0.00000423816,0.000012610476,0.0000636056,0.000040438354,0.000918058,0.99165267,0.00001689552,0.0004743536,0.0000031745678],"about_ca_topic_score_codex":0.00059965556,"about_ca_topic_score_gemma":0.0007127295,"teacher_disagreement_score":0.0008479903,"about_ca_system_score_codex":0.00021502076,"about_ca_system_score_gemma":0.00007953432,"threshold_uncertainty_score":0.0028368235},"labels":[],"label_agreement":null},{"id":"W2020674585","doi":"10.1116/1.1474413","title":"Design of multiplexer in amorphous silicon technology","year":2002,"lang":"en","type":"article","venue":"Journal of Vacuum Science & Technology A Vacuum Surfaces and Films","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":15,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Multiplexer; Materials science; Thin-film transistor; Transistor; Optoelectronics; Amorphous silicon; Threshold voltage; Electronic circuit; Active matrix; Metastability; Amorphous solid; Logic gate; AND gate; Electrical engineering; Silicon; Electronic engineering; Voltage; Nanotechnology; Multiplexing; Engineering; Physics; Crystalline silicon; Chemistry","score_opus":0.015381501947214458,"score_gpt":0.21010500776616353,"score_spread":0.19472350581894907,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2020674585","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.3642924,0.00239623,0.6032849,0.0007524835,0.00039427335,0.0007412548,0.00066542224,0.004290868,0.02318212],"genre_scores_gemma":[0.8296584,0.00061394303,0.15767004,0.00020901213,0.00015801216,0.0002787203,0.00016971432,0.000060054317,0.011182077],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99979705,0.000018193628,0.000011254935,0.00008511619,0.000056636916,0.000031795043],"domain_scores_gemma":[0.9998336,0.00003453006,0.00005597576,0.000013872345,0.000040218863,0.000021784277],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00021109631,0.00041109207,0.00031993235,0.00041427012,0.0004970829,0.001045344,0.00065763824,0.000438254,0.0033642282],"category_scores_gemma":[0.00028369937,0.000244643,0.00018063962,0.00022305026,0.0001514846,0.0006401489,0.00024177045,0.0002513672,0.000669412],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00044067568,0.00015753273,0.0010909007,0.00024089808,0.00009646437,0.00075587374,0.00026440504,0.012488348,0.84378725,0.022666007,0.003511164,0.11450043],"study_design_scores_gemma":[0.00022023787,0.0016569922,0.0017576863,0.00005670889,0.00014390588,0.0015291227,0.00009264629,0.18842927,0.7489874,0.0050464612,0.052004203,0.00007528019],"about_ca_topic_score_codex":0.00044504445,"about_ca_topic_score_gemma":0.00067351747,"teacher_disagreement_score":0.0033642282,"about_ca_system_score_codex":0.0005889497,"about_ca_system_score_gemma":0.00028626615,"threshold_uncertainty_score":0.011254489},"labels":[],"label_agreement":null},{"id":"W2020903419","doi":"10.1063/1.3660725","title":"Photodiode with nanocrystalline Si/amorphous Si absorber bilayer","year":2011,"lang":"en","type":"article","venue":"Applied Physics Letters","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":2,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Photodiode; Materials science; Nanocrystalline material; Bilayer; Amorphous solid; Optoelectronics; Silicon; Dark current; Amorphous silicon; Layer (electronics); Nanocrystalline silicon; Ultraviolet; Capacitance; Wavelength; Analytical Chemistry (journal); Crystalline silicon; Photodetector; Nanotechnology; Chemistry; Crystallography","score_opus":0.012760689046723266,"score_gpt":0.16481433508139562,"score_spread":0.15205364603467236,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2020903419","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9956999,0.00028811718,0.0031677252,0.000037883972,0.000014718526,0.00001321216,0.00008323842,0.00005966941,0.00063552783],"genre_scores_gemma":[0.98508745,0.00022797097,0.0133019015,0.000029404491,0.000007095963,0.000012272283,0.000073554744,0.000009262156,0.0012510734],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99989974,0.000006407885,0.000007024582,0.000033427023,0.000035149922,0.000018172952],"domain_scores_gemma":[0.9998878,0.000026810218,0.00002260452,0.000024374158,0.000025608415,0.000012749247],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00014344508,0.00015178056,0.00031171404,0.00010495842,0.00014620066,0.00021517416,0.00037567076,0.00021281044,0.0005088084],"category_scores_gemma":[0.00016116655,0.00009067157,0.0001683239,0.00013506797,0.000116805895,0.00029351216,0.00018800185,0.00021060216,0.00014665989],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00004461817,0.000009365249,0.00032807118,0.000019302826,0.000008573005,0.00005244621,0.000012546162,0.000069004884,0.99790883,0.000051834697,0.00004096413,0.0014544305],"study_design_scores_gemma":[0.00001548475,0.00024423402,0.0022490562,0.000003996175,0.000032267515,0.0002956537,0.000036093363,0.0027080986,0.99316955,0.00003481471,0.0012036276,0.00000709825],"about_ca_topic_score_codex":0.00075637014,"about_ca_topic_score_gemma":0.001555767,"teacher_disagreement_score":0.00075637014,"about_ca_system_score_codex":0.00035241892,"about_ca_system_score_gemma":0.00012339081,"threshold_uncertainty_score":0.00255692},"labels":[],"label_agreement":null},{"id":"W2022118988","doi":"10.1016/j.solmat.2010.02.048","title":"Performance of microcrystalline silicon single and double junction solar cells of different degrees of crystallinity","year":2010,"lang":"en","type":"article","venue":"Solar Energy Materials and Solar Cells","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":4,"is_retracted":false,"has_abstract":false,"route_ca_aff":false,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"","funders":"Natural Sciences and Engineering Research Council of Canada; Agence Nationale de la Recherche; Department of Science and Technology, Ministry of Science and Technology, India; Ministry of New and Renewable Energy India","keywords":"Microcrystalline silicon; Crystallinity; Materials science; Silicon; Open-circuit voltage; Microcrystalline; Volume fraction; Amorphous silicon; Solar cell; Amorphous solid; Optoelectronics; Chemical engineering; Crystallography; Crystalline silicon; Voltage; Chemistry; Composite material; Physics","score_opus":0.007443792277824266,"score_gpt":0.16858753887129516,"score_spread":0.1611437465934709,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2022118988","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99865675,0.0004520454,0.00010687273,0.000027910306,0.000012485237,0.00000269278,0.00021519182,0.000027312375,0.00049870415],"genre_scores_gemma":[0.99853075,0.00027302667,0.00014849754,0.000011306489,0.0000070265946,0.000004443751,0.00022228432,0.0000127761205,0.0007898756],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99976736,0.000014182742,0.000016715085,0.000052942203,0.00008986383,0.00005897361],"domain_scores_gemma":[0.99953985,0.0001865122,0.000042544772,0.0000427328,0.00014577333,0.00004262039],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00017752327,0.0002685394,0.0006099824,0.00027966037,0.0003436363,0.00054774183,0.00047142417,0.0005430588,0.0019530235],"category_scores_gemma":[0.00053159305,0.00018451466,0.000251684,0.0005288339,0.00020409492,0.00035148082,0.00017124564,0.00028732375,0.00027831073],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0014843511,0.000056141347,0.0022612854,0.00012307714,0.00006587713,0.00014658572,0.00010004804,0.003105581,0.9873584,0.00017673791,0.0003599695,0.004761972],"study_design_scores_gemma":[0.000034361892,0.0004885021,0.0052213115,0.000007186287,0.00004575859,0.00007681186,0.00006753342,0.007530974,0.986047,0.000037355298,0.0004328516,0.000010399102],"about_ca_topic_score_codex":0.003619764,"about_ca_topic_score_gemma":0.0052400646,"teacher_disagreement_score":0.003619764,"about_ca_system_score_codex":0.0006105952,"about_ca_system_score_gemma":0.0003321385,"threshold_uncertainty_score":0.00719738},"labels":[],"label_agreement":null},{"id":"W2022779549","doi":"10.1007/s10470-007-9082-4","title":"Compensation technique for DC and transient instability of thin film transistor circuits for large-area devices","year":2008,"lang":"en","type":"article","venue":"Analog Integrated Circuits and Signal Processing","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":4,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Thin-film transistor; Transient (computer programming); Transistor; Compensation (psychology); Materials science; Amplifier; Threshold voltage; Optoelectronics; Electrical engineering; Voltage; Electronic circuit; Gate driver; Electronic engineering; Computer science; CMOS; Engineering; Nanotechnology","score_opus":0.0265092398706763,"score_gpt":0.22822100938212586,"score_spread":0.20171176951144956,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2022779549","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.13791093,0.001307528,0.85199696,0.00040199142,0.00033415528,0.000114120296,0.000078189136,0.0015453122,0.0063108164],"genre_scores_gemma":[0.8078117,0.0006631376,0.18278292,0.0002250378,0.00013132673,0.00006971498,0.00015142855,0.000111708396,0.008053045],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998853,0.000010154484,0.0000065419254,0.00002355276,0.00006237127,0.000012052907],"domain_scores_gemma":[0.999747,0.00005871449,0.000037940536,0.00003355823,0.000110665576,0.000012119539],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00012366327,0.00032777424,0.00022149051,0.00053383986,0.0004993506,0.0003448415,0.0005835065,0.00039434663,0.0020510794],"category_scores_gemma":[0.00048599864,0.00017220582,0.0002512795,0.00041982776,0.00017864243,0.0005362337,0.00019223923,0.0006019323,0.00027852762],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00010467765,0.000021625137,0.00027988196,0.00008287478,0.000016848951,0.00011138405,0.00008442758,0.0007860522,0.936425,0.0027491862,0.00092414184,0.058413878],"study_design_scores_gemma":[0.000030452331,0.0002206635,0.0015899709,0.000023382749,0.00006873424,0.000749288,0.00004933666,0.07667905,0.9116567,0.0009634215,0.007941367,0.000027635188],"about_ca_topic_score_codex":0.00074808,"about_ca_topic_score_gemma":0.0020176664,"teacher_disagreement_score":0.0020510794,"about_ca_system_score_codex":0.00040672833,"about_ca_system_score_gemma":0.00031576277,"threshold_uncertainty_score":0.0068615675},"labels":[],"label_agreement":null},{"id":"W2022870643","doi":"10.1139/p99-021","title":"Properties of a-SiC:H films and solar cells","year":2000,"lang":"en","type":"article","venue":"Canadian Journal of Physics","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":10,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":false,"route_ca_venue":true,"route_about_ca":false,"ca_institutions":"","funders":"","keywords":"Dilution; Plasma-enhanced chemical vapor deposition; Layer (electronics); Physics; Hydrogen; Doping; Optoelectronics; Deposition (geology); Band gap; Chemical vapor deposition; Plasma; Analytical Chemistry (journal); Optics; Materials science; Nanotechnology; Chromatography; Chemistry","score_opus":0.009878200353266373,"score_gpt":0.15092281062252688,"score_spread":0.14104461026926052,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2022870643","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9878527,0.002376342,0.0015284691,0.00006489774,0.000046409616,0.000050725474,0.0024708433,0.00011777626,0.0054918705],"genre_scores_gemma":[0.99309945,0.0009632726,0.0018712594,0.000048270813,0.0000322473,0.00002767469,0.0012944386,0.000046726196,0.0026166989],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9997819,0.000011132898,0.000016337946,0.000041281528,0.000119600474,0.000029695768],"domain_scores_gemma":[0.9996532,0.000084186286,0.000031377996,0.000034853325,0.00016391314,0.00003260108],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00015556156,0.00024106678,0.00030163035,0.0004233037,0.00030472773,0.00049959816,0.00030842304,0.0004432529,0.0031136377],"category_scores_gemma":[0.00045565865,0.0001531696,0.00017558997,0.0006380551,0.00015581647,0.00020555063,0.00009468076,0.00024564427,0.00054559426],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00020556571,0.000043348246,0.0028797577,0.00025243958,0.000037586404,0.00019140376,0.00007561352,0.001081409,0.9867669,0.00022416242,0.0008888004,0.007352828],"study_design_scores_gemma":[0.000028459137,0.00041548404,0.031254414,0.000022121636,0.000051326642,0.0004232583,0.0000853645,0.0042361533,0.9574077,0.00012901596,0.0059207287,0.000025956411],"about_ca_topic_score_codex":0.00224935,"about_ca_topic_score_gemma":0.0018634133,"teacher_disagreement_score":0.0031136377,"about_ca_system_score_codex":0.0003197433,"about_ca_system_score_gemma":0.00016005608,"threshold_uncertainty_score":0.01041615},"labels":[],"label_agreement":null},{"id":"W2022962595","doi":"10.1016/s0022-3093(99)00832-7","title":"1/f Noise in doped and undoped amorphous silicon","year":2000,"lang":"en","type":"article","venue":"Journal of Non-Crystalline Solids","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":12,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Saskatchewan","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Amorphous solid; Noise (video); Doping; Amorphous silicon; Analytical Chemistry (journal); Condensed matter physics; Power law; Materials science; Noise spectral density; Conductance; Noise power; Silicon; Type (biology); Noise figure; Physics; Chemistry; Mathematics; Power (physics); Thermodynamics; Optoelectronics; Crystallography; Statistics; Crystalline silicon","score_opus":0.006692047790174598,"score_gpt":0.21174574848556593,"score_spread":0.20505370069539133,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2022962595","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99622464,0.00032857838,0.0012578088,0.00006571216,0.000018454699,0.0000070644132,0.00016953688,0.00007154933,0.0018566344],"genre_scores_gemma":[0.9985482,0.000075428434,0.00027454717,0.000015333162,0.000010555568,0.0000034498348,0.000134372,0.000012914182,0.00092512],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9997031,0.0000459056,0.000011997344,0.000078805046,0.000084770894,0.00007532342],"domain_scores_gemma":[0.9988851,0.00081937696,0.00008921446,0.000043990378,0.00010789844,0.00005444689],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00044433356,0.00034452722,0.00044885202,0.0008095028,0.00044162007,0.00059786986,0.00046753747,0.0007823369,0.001830224],"category_scores_gemma":[0.0017565767,0.00014601788,0.0002444723,0.00032650706,0.00051100896,0.00044241684,0.00017571055,0.00028254866,0.00022926809],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0065175956,0.0004082508,0.011784723,0.00027907384,0.00016290345,0.0020726924,0.0006946475,0.02231005,0.93400156,0.006470194,0.0008736778,0.014424554],"study_design_scores_gemma":[0.00029913025,0.0020902443,0.07143514,0.0001904491,0.0004085901,0.0025302463,0.0006630498,0.23920679,0.6772041,0.0027109866,0.0031209637,0.00014033397],"about_ca_topic_score_codex":0.003690596,"about_ca_topic_score_gemma":0.005034716,"teacher_disagreement_score":0.003690596,"about_ca_system_score_codex":0.0007879265,"about_ca_system_score_gemma":0.00031751726,"threshold_uncertainty_score":0.007338226},"labels":[],"label_agreement":null},{"id":"W2024891020","doi":"10.1117/12.844025","title":"Amorphous silicon p-i-n photodetector with Frisch grid for high-speed medical imaging","year":2010,"lang":"en","type":"article","venue":"Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Photodetector; Detector; Optoelectronics; Silicon; Grid; Optics; Electron; Electron mobility; Photon; Electrode; Physics; Charge carrier; Amorphous silicon; X-ray detector; Materials science; Crystalline silicon","score_opus":0.005642915683407804,"score_gpt":0.20090739364166998,"score_spread":0.19526447795826218,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2024891020","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.91523725,0.0016077126,0.074366204,0.00023930747,0.000058962,0.00012381385,0.0006083287,0.0012044024,0.006554008],"genre_scores_gemma":[0.9528012,0.00046658365,0.044271503,0.000063124455,0.000004308195,0.000043287604,0.00014658384,0.000051706746,0.0021515836],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99980146,0.00003059165,0.000008836937,0.000042500993,0.00009044915,0.000026147844],"domain_scores_gemma":[0.99965906,0.00014566633,0.00007349718,0.000049694794,0.00005331951,0.000018764182],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0002592796,0.00036855167,0.00038461934,0.00014342307,0.00018739012,0.00048557617,0.00080862583,0.0005754815,0.0015961499],"category_scores_gemma":[0.0007373534,0.00019000162,0.00033654252,0.00058693206,0.0002508711,0.0005529531,0.00022889001,0.00030491053,0.00047568147],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0022282435,0.00040424362,0.014135369,0.0010699277,0.00027675074,0.0006438146,0.00019362482,0.15558763,0.7498881,0.0055916193,0.0025441975,0.06743643],"study_design_scores_gemma":[0.00016114244,0.0019215553,0.012636997,0.00004564157,0.000079319616,0.00045290892,0.000099286626,0.24623665,0.73067516,0.00084366923,0.0067829397,0.00006475756],"about_ca_topic_score_codex":0.0026552128,"about_ca_topic_score_gemma":0.0039357995,"teacher_disagreement_score":0.0026552128,"about_ca_system_score_codex":0.00095187966,"about_ca_system_score_gemma":0.00041071637,"threshold_uncertainty_score":0.00690645},"labels":[],"label_agreement":null},{"id":"W2025385825","doi":"10.1063/1.2390629","title":"Hydrogenation-assisted nanocrystallization of amorphous silicon by radio-frequency plasma-enhanced chemical vapor deposition","year":2006,"lang":"en","type":"article","venue":"Journal of Applied Physics","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":5,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Acadia University","funders":"University of Tehran","keywords":"Materials science; Nanocrystalline material; Nanocrystalline silicon; Chemical vapor deposition; Silicon; Amorphous solid; Amorphous silicon; Plasma-enhanced chemical vapor deposition; Analytical Chemistry (journal); Annealing (glass); Crystallization; Plasma processing; Transmission electron microscopy; Chemical engineering; Plasma; Chemistry; Nanotechnology; Crystalline silicon; Optoelectronics; Crystallography; Metallurgy","score_opus":0.0043221468573689525,"score_gpt":0.1736775209508595,"score_spread":0.16935537409349055,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2025385825","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99551165,0.00054776995,0.0025163942,0.000034827764,0.000015448124,0.0000181951,0.00012862399,0.00005601926,0.001171132],"genre_scores_gemma":[0.9942789,0.00036409113,0.0044333474,0.000012017236,0.000005781411,0.000013294461,0.000115206756,0.000021730042,0.0007555415],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999356,0.0000041711796,0.00000382677,0.000017418746,0.000024361194,0.000014706812],"domain_scores_gemma":[0.9999243,0.000024044268,0.000017923172,0.0000119039,0.000014914484,0.0000070138367],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00007695015,0.00014196217,0.00022283834,0.000082507235,0.000128604,0.00017010338,0.00019596297,0.00011723137,0.00038697204],"category_scores_gemma":[0.00016497214,0.00014630609,0.00013899921,0.00010109831,0.00014913965,0.00010910532,0.00011704573,0.00016916443,0.00009664821],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000011060473,0.0000026383207,0.000051328152,0.000014598308,0.0000017305864,0.000013935025,0.0000073119904,0.00006788931,0.99939513,0.000022052564,0.000013782005,0.0003984479],"study_design_scores_gemma":[0.000005102371,0.000031251722,0.00073264923,8.199599e-7,0.000002993128,0.00003450664,0.0000051756283,0.00091510045,0.99784994,0.000007800661,0.0004132609,0.0000014322396],"about_ca_topic_score_codex":0.0017710902,"about_ca_topic_score_gemma":0.0042355577,"teacher_disagreement_score":0.0017710902,"about_ca_system_score_codex":0.0002894309,"about_ca_system_score_gemma":0.00018212176,"threshold_uncertainty_score":0.0035215616},"labels":[],"label_agreement":null},{"id":"W2026104419","doi":"10.1016/j.ssc.2010.11.026","title":"Spectral variations in the optical transition matrix element and their impact on the optical properties associated with hydrogenated amorphous silicon","year":2010,"lang":"en","type":"article","venue":"Solid State Communications","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":6,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of British Columbia, Okanagan Campus; University of British Columbia; University of Regina","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Amorphous silicon; Silicon; Amorphous solid; Materials science; Band gap; Matrix (chemical analysis); Condensed matter physics; Atomic physics; Physics; Chemistry; Optoelectronics; Crystallography; Crystalline silicon","score_opus":0.019024131798864585,"score_gpt":0.245501336346887,"score_spread":0.22647720454802242,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2026104419","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9964185,0.00011741415,0.0011177259,0.00005494669,0.000007410096,0.000002622592,0.00007379451,0.000042835272,0.0021648195],"genre_scores_gemma":[0.99940455,0.00004334039,0.00015675496,0.0000065822123,0.00000370572,0.0000012992406,0.00004164461,0.000007688299,0.00033458538],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99995494,0.000009649197,0.00000129893,0.000010734902,0.000014291318,0.00000900787],"domain_scores_gemma":[0.9995247,0.00030756972,0.000067578534,0.000031223706,0.000044422122,0.00002445682],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00013501478,0.00013648694,0.00007492492,0.0003212705,0.00017467853,0.0002042863,0.00020027204,0.00019036393,0.0020452917],"category_scores_gemma":[0.00047802352,0.0000997247,0.00007419755,0.00026104393,0.00045204948,0.0002672776,0.00013371625,0.0002489105,0.00014258269],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00091622345,0.000077979166,0.005213036,0.00004219985,0.000022214314,0.00027687676,0.0001805707,0.0028258013,0.9801819,0.0029179594,0.00028819308,0.007057167],"study_design_scores_gemma":[0.00004328388,0.00026643253,0.038649768,0.000009596937,0.000031532727,0.00033654863,0.00021189956,0.041409086,0.9166844,0.001291921,0.0010387418,0.000026762344],"about_ca_topic_score_codex":0.0003935349,"about_ca_topic_score_gemma":0.0006242492,"teacher_disagreement_score":0.0020452917,"about_ca_system_score_codex":0.00015406986,"about_ca_system_score_gemma":0.00006874661,"threshold_uncertainty_score":0.006842196},"labels":[],"label_agreement":null},{"id":"W2027621591","doi":"10.1063/1.4772485","title":"Photoelectric heat effect induce instability on the negative bias temperature illumination stress for InGaZnO thin film transistors","year":2012,"lang":"en","type":"article","venue":"Applied Physics Letters","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":14,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Toronto","funders":"","keywords":"Materials science; Threshold voltage; Instability; Thin-film transistor; Optoelectronics; Stress (linguistics); Photoelectric effect; Biasing; Degradation (telecommunications); Dangling bond; Negative-bias temperature instability; Capacitance; Thin film; Transistor; Voltage; Condensed matter physics; Electrical engineering; Chemistry; Composite material; Nanotechnology; Physics; Silicon; Electrode","score_opus":0.0137549165662852,"score_gpt":0.2024257207227723,"score_spread":0.1886708041564871,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2027621591","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9986438,0.0002355954,0.000615427,0.000029219816,0.000007682565,0.0000050372537,0.00002949154,0.000020812873,0.0004128707],"genre_scores_gemma":[0.9992084,0.00011080835,0.0002932607,0.000011913598,0.0000036560425,0.000003900528,0.000023028495,0.000005593673,0.0003395105],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99994826,0.0000034010602,0.0000031269167,0.000009643972,0.000022368977,0.0000131805655],"domain_scores_gemma":[0.9998908,0.000030494242,0.000033365126,0.000009265754,0.000024414407,0.000011561864],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0000525531,0.00019096442,0.00012828448,0.000112058406,0.00014468568,0.00017007078,0.00011481189,0.00014708031,0.00067872973],"category_scores_gemma":[0.00017323084,0.000081051614,0.00010795873,0.00008069054,0.0001871512,0.00019170347,0.00010894251,0.00020311784,0.000070057446],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000033862467,0.0000041307844,0.00039632054,0.00001522016,0.0000024390395,0.000052425312,0.00003272661,0.00005246913,0.99860114,0.000022266375,0.000013968215,0.0007731931],"study_design_scores_gemma":[0.0000023289306,0.000084994026,0.0062883412,0.000002830784,0.0000075819316,0.00008434112,0.000037819384,0.0008469735,0.99240816,0.000015351663,0.00021781203,0.000003338337],"about_ca_topic_score_codex":0.0005286111,"about_ca_topic_score_gemma":0.001063252,"teacher_disagreement_score":0.00067872973,"about_ca_system_score_codex":0.00018416629,"about_ca_system_score_gemma":0.00008602042,"threshold_uncertainty_score":0.0022705197},"labels":[],"label_agreement":null},{"id":"W2028122570","doi":"10.1557/proc-685-d5.15.1","title":"PECVD Amorphous Silicon Nitride at 120°C for a-Si:H TFTs.","year":2001,"lang":"en","type":"article","venue":"MRS Proceedings","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"University of Waterloo; British Heart Foundation","keywords":"Materials science; Plasma-enhanced chemical vapor deposition; Silicon nitride; Passivation; Nitride; Amorphous solid; Optoelectronics; Amorphous silicon; Stoichiometry; Silicon; Analytical Chemistry (journal); Layer (electronics); Composite material; Crystalline silicon; Crystallography","score_opus":0.012558559644634659,"score_gpt":0.20073019306068707,"score_spread":0.18817163341605242,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2028122570","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.94111335,0.0059483135,0.01990681,0.00071646966,0.0008219193,0.00019270099,0.005162465,0.0011882719,0.024949722],"genre_scores_gemma":[0.95444214,0.0031538534,0.015127261,0.00019624055,0.00006646318,0.00013912341,0.0031112547,0.00028433322,0.023479287],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998945,0.000004801552,0.000005182782,0.000032547123,0.000030718784,0.000032304866],"domain_scores_gemma":[0.9999349,0.000022099073,0.0000056706854,0.000009387843,0.000021345217,0.0000065042327],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00013797119,0.0002699222,0.00026707535,0.00017797697,0.00064201636,0.00022441146,0.00031937982,0.00041152647,0.0066785095],"category_scores_gemma":[0.00026009764,0.00019680728,0.00015963786,0.00027569802,0.00013302392,0.0003981066,0.00010145361,0.0005956369,0.0021613704],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00010090349,0.000015736287,0.00009598583,0.00007771739,0.0000069301987,0.000079074554,0.000040459807,0.00011175168,0.99572575,0.000091661444,0.0011222642,0.0025317895],"study_design_scores_gemma":[0.000013701364,0.0001258123,0.0016446923,0.000014953586,0.000010766432,0.00014859399,0.000043962686,0.0009585476,0.98934937,0.00008683403,0.0075952234,0.000007702513],"about_ca_topic_score_codex":0.0027444959,"about_ca_topic_score_gemma":0.0093210405,"teacher_disagreement_score":0.0066785095,"about_ca_system_score_codex":0.00040233484,"about_ca_system_score_gemma":0.00030841774,"threshold_uncertainty_score":0.022341907},"labels":[],"label_agreement":null},{"id":"W2028993061","doi":"10.1557/proc-744-m5.22","title":"Amorphous-Microcrystalline Silicon Films Obtained Using Hydrogen Dilution in a DC Saddle-Field Glow-Discharge","year":2002,"lang":"en","type":"article","venue":"MRS Proceedings","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":5,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Toronto","funders":"","keywords":"Materials science; Glow discharge; Substrate (aquarium); Analytical Chemistry (journal); Raman spectroscopy; Microcrystalline silicon; Amorphous solid; Hydrogen; Microcrystalline; Electric field; Amorphous silicon; Dilution; Silicon; Optoelectronics; Optics; Crystalline silicon; Plasma; Crystallography; Chemistry","score_opus":0.016143512105294498,"score_gpt":0.2004019505782403,"score_spread":0.18425843847294582,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2028993061","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9952909,0.00046446908,0.001394935,0.00007179483,0.000017580158,0.00003634861,0.00024610528,0.000048632766,0.0024293265],"genre_scores_gemma":[0.9947153,0.00031614,0.0021790352,0.000039687813,0.000011014582,0.000021750799,0.0003121733,0.00003709772,0.002367822],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99991083,0.000007724983,0.0000056162567,0.000021074293,0.000029137658,0.000025621608],"domain_scores_gemma":[0.9999026,0.00003585748,0.000015609408,0.00001622563,0.000018428758,0.00001116823],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00017055472,0.0001994975,0.00037153787,0.00017608912,0.00032602184,0.00040524974,0.00029703637,0.00020447395,0.0015266191],"category_scores_gemma":[0.00023850692,0.00020027604,0.00011716912,0.00027391408,0.00027562972,0.00030527147,0.00015010253,0.0004863386,0.00033093392],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00008274456,0.000009839555,0.0001069188,0.000022625527,0.0000045870906,0.000035109337,0.00002233857,0.00003722089,0.9990625,0.00011134456,0.000036048757,0.00046868465],"study_design_scores_gemma":[0.000013634165,0.000059860944,0.0006079155,0.0000016315274,0.000004602121,0.000027929611,0.000010291411,0.0001675288,0.9986683,0.000017124967,0.00041984333,0.0000012362908],"about_ca_topic_score_codex":0.0010220362,"about_ca_topic_score_gemma":0.0022951772,"teacher_disagreement_score":0.0015266191,"about_ca_system_score_codex":0.00030584654,"about_ca_system_score_gemma":0.00020288478,"threshold_uncertainty_score":0.005107045},"labels":[],"label_agreement":null},{"id":"W2029005935","doi":"10.1134/s1063782615020189","title":"Features of photoconversion in highly efficient silicon solar cells","year":2015,"lang":"en","type":"article","venue":"Semiconductors","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":26,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Ontario Tech University","funders":"","keywords":"Recombination; Silicon; Heterojunction; Auger effect; Materials science; Solar cell; Depletion region; Optoelectronics; Spontaneous emission; Atomic physics; Physics; Auger; Chemistry; Optics; Semiconductor","score_opus":0.013400559620178975,"score_gpt":0.20379888402247318,"score_spread":0.1903983244022942,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2029005935","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9472441,0.0010324483,0.041555163,0.000039044422,0.000009316262,0.000033718155,0.00016279158,0.0004105339,0.009512812],"genre_scores_gemma":[0.9980932,0.00015301647,0.0012426664,0.000005253732,0.000002352112,0.000009525626,0.00005357448,0.0000140308375,0.00042645753],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9997944,0.000024282397,0.0000097274715,0.000032984495,0.00011404829,0.000024464818],"domain_scores_gemma":[0.9998313,0.00008572536,0.000024181012,0.000022596603,0.000028766808,0.000007427652],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00019969695,0.00027778934,0.00026658003,0.00042630133,0.00016220968,0.000433176,0.00032134494,0.00031279586,0.0006252644],"category_scores_gemma":[0.00041048738,0.00020600604,0.00035058896,0.00034027587,0.00037679102,0.0002587832,0.00018520297,0.00022517124,0.00017392979],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00029694993,0.00006575641,0.0045945095,0.00019322956,0.000050014387,0.00048346847,0.00015968394,0.063921325,0.91008794,0.006078102,0.00020268891,0.013866426],"study_design_scores_gemma":[0.000049253507,0.0005346688,0.025450872,0.000031671767,0.00008251684,0.00096302776,0.00010575201,0.26242268,0.7027078,0.005602803,0.0020041994,0.00004464399],"about_ca_topic_score_codex":0.0004010155,"about_ca_topic_score_gemma":0.00030829193,"teacher_disagreement_score":0.0006252644,"about_ca_system_score_codex":0.00035637323,"about_ca_system_score_gemma":0.00012222039,"threshold_uncertainty_score":0.002585709},"labels":[],"label_agreement":null},{"id":"W2029217067","doi":"10.1889/1.1825780","title":"57.2: Extreme AMOLED Backplanes in a‐Si with Proven Stability","year":2004,"lang":"en","type":"article","venue":"SID Symposium Digest of Technical Papers","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":11,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo; IGNIS Innovation (Canada)","funders":"","keywords":"AMOLED; Backplane; Materials science; OLED; Optoelectronics; Compensation (psychology); Pixel; Thin-film transistor; Electrical engineering; Active matrix; Optics; Nanotechnology; Engineering; Layer (electronics); Physics","score_opus":0.009986764726291968,"score_gpt":0.1820553841800282,"score_spread":0.17206861945373622,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2029217067","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9693443,0.00084069744,0.008992085,0.00016706968,0.00009428685,0.000014308779,0.000109621324,0.00027611147,0.02016151],"genre_scores_gemma":[0.99162674,0.00017353255,0.0045996266,0.00003463694,0.000015788366,0.000005913713,0.00006100227,0.00003353559,0.0034492216],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999114,0.0000041343437,0.0000036408637,0.000012297845,0.000047311623,0.00002115011],"domain_scores_gemma":[0.9998945,0.000024506035,0.000018319475,0.00001548078,0.000032765,0.0000144162495],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000119294586,0.00014797034,0.00018869738,0.00020630499,0.00032929864,0.00048542666,0.00017323448,0.0003369234,0.0025776203],"category_scores_gemma":[0.0001971758,0.000090125905,0.00011971268,0.00011056763,0.00029346457,0.00030309445,0.00020997095,0.00024367875,0.00073813763],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00013481789,0.00001734018,0.0009305585,0.00003215177,0.000006871795,0.0004354221,0.0000930565,0.0003802358,0.9875858,0.0028111408,0.0005228559,0.0070498097],"study_design_scores_gemma":[0.000021876673,0.00024900562,0.002993585,0.000013725434,0.000009738908,0.00070520747,0.000039170885,0.0043298677,0.98365515,0.0006603793,0.0073110675,0.000011206657],"about_ca_topic_score_codex":0.00044589795,"about_ca_topic_score_gemma":0.00048687853,"teacher_disagreement_score":0.0025776203,"about_ca_system_score_codex":0.00023045683,"about_ca_system_score_gemma":0.000114999144,"threshold_uncertainty_score":0.008623064},"labels":[],"label_agreement":null},{"id":"W2029769077","doi":"10.1117/12.912288","title":"Amorphous selenium photodetector on a flexible substrate for indirect conversion medical imaging","year":2012,"lang":"en","type":"article","venue":"Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Photodetector; Materials science; Optoelectronics; Amorphous solid; Responsivity; Substrate (aquarium); Thin-film transistor; Electronics; Flexible electronics; Computer science; Nanotechnology; Electrical engineering","score_opus":0.011210627513318264,"score_gpt":0.21804030284068035,"score_spread":0.20682967532736207,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2029769077","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9917493,0.0005592876,0.0048221196,0.00014597648,0.000042601423,0.00002435144,0.00020466105,0.00018577091,0.00226603],"genre_scores_gemma":[0.9880723,0.00040954276,0.007868434,0.000049592778,0.000012573372,0.00001267415,0.000091461414,0.000028501967,0.0034548745],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99985135,0.000016877268,0.000008452862,0.000037526184,0.00006393369,0.000021880607],"domain_scores_gemma":[0.99975795,0.000081430626,0.0000414184,0.000043106535,0.000048942205,0.000027082817],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00017576199,0.00024045068,0.00029374732,0.0002720996,0.00020487967,0.0005232649,0.00038763002,0.00041553812,0.001850005],"category_scores_gemma":[0.00034756112,0.00015865453,0.00017303259,0.00040251034,0.00019939215,0.00037002593,0.00032137067,0.00027090887,0.00035816338],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0001863149,0.000037401576,0.0015323032,0.00006424358,0.000021900803,0.00052700384,0.00005843607,0.00055873767,0.9889149,0.00035090544,0.00043857636,0.0073093246],"study_design_scores_gemma":[0.000046499157,0.00074826047,0.0076016425,0.00002405072,0.000037013648,0.00078349037,0.000114181115,0.0073263412,0.9798448,0.00008849289,0.003364882,0.000020365944],"about_ca_topic_score_codex":0.0007000186,"about_ca_topic_score_gemma":0.0015148895,"teacher_disagreement_score":0.001850005,"about_ca_system_score_codex":0.00022524683,"about_ca_system_score_gemma":0.00017235678,"threshold_uncertainty_score":0.0061888695},"labels":[],"label_agreement":null},{"id":"W2030001276","doi":"10.1116/1.2194930","title":"Numerical study on the scaling of a-Si:H thin film transistors","year":2006,"lang":"en","type":"article","venue":"Journal of Vacuum Science & Technology A Vacuum Surfaces and Films","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":2,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Thin-film transistor; Threshold voltage; Subthreshold conduction; Materials science; Subthreshold slope; Scaling; Optoelectronics; Transistor; Amorphous silicon; Drain-induced barrier lowering; Channel (broadcasting); Voltage; Silicon; Reverse short-channel effect; Channel length modulation; Amorphous solid; Current (fluid); Electrical engineering; Nanotechnology; Layer (electronics); Crystalline silicon; Engineering; Crystallography; Chemistry; Geometry","score_opus":0.010135536552750313,"score_gpt":0.21907049666346654,"score_spread":0.20893496011071622,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2030001276","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.8637541,0.0019451699,0.0948486,0.0015129406,0.00016547776,0.00008344099,0.00046330277,0.00033678042,0.036890157],"genre_scores_gemma":[0.98555875,0.0004370098,0.011673651,0.000076036864,0.000030806605,0.00004129616,0.0000859326,0.00003789317,0.0020586224],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99991393,0.00002386246,0.000004099978,0.000011053295,0.0000303738,0.00001671355],"domain_scores_gemma":[0.9987047,0.0010019351,0.00010076073,0.00004213805,0.00011487642,0.000035576024],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00038108494,0.00026443065,0.00027074956,0.0003045924,0.00032340566,0.00048236875,0.00039741842,0.00078543567,0.002620733],"category_scores_gemma":[0.0033904924,0.00015669537,0.00027067214,0.00028333042,0.0004335534,0.0006116553,0.00023174056,0.0003563895,0.000118075026],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00004227267,0.000047112946,0.002320943,0.00012916514,0.000026029778,0.00018597297,0.000062988496,0.9719874,0.008528685,0.012034614,0.000445993,0.00418887],"study_design_scores_gemma":[0.000004101205,0.0000074834975,0.00023749926,0.0000052184178,0.000003287861,0.000008718868,0.0000072428243,0.99838436,0.00053334876,0.0006538494,0.00015297969,0.0000019800157],"about_ca_topic_score_codex":0.005033481,"about_ca_topic_score_gemma":0.0032454005,"teacher_disagreement_score":0.005033481,"about_ca_system_score_codex":0.00051626,"about_ca_system_score_gemma":0.00046255157,"threshold_uncertainty_score":0.010008395},"labels":[],"label_agreement":null},{"id":"W2030038223","doi":"10.1116/1.1705581","title":"Low-temperature stress-assisted germanium-induced crystallization of silicon–germanium alloys on flexible polyethylene terephtalate substrates","year":2004,"lang":"en","type":"article","venue":"Journal of Vacuum Science & Technology A Vacuum Surfaces and Films","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":2,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Acadia University","funders":"Iran Telecommunication Research Center; Natural Sciences and Engineering Research Council of Canada; Canada Research Chairs","keywords":"Crystallization; Materials science; Germanium; Transmission electron microscopy; Amorphous solid; Annealing (glass); Scanning electron microscope; Compressive strength; Composite material; Alloy; Crystallography; Amorphous metal; Silicon; Chemical engineering; Analytical Chemistry (journal); Metallurgy; Nanotechnology; Chemistry","score_opus":0.009768152848482637,"score_gpt":0.2271776565975964,"score_spread":0.21740950374911375,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2030038223","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9992261,0.0001550197,0.00033469635,0.000009827699,0.0000055674172,0.0000058535743,0.000040480943,0.000012037841,0.00021037488],"genre_scores_gemma":[0.99872774,0.00012091025,0.0005782976,0.0000045623347,0.0000025057316,0.000005570014,0.00004762252,0.000012401345,0.00050042453],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999167,0.000009793722,0.0000066253033,0.000014957857,0.000028437265,0.000023459435],"domain_scores_gemma":[0.9998486,0.000053657648,0.00003100152,0.000023501729,0.000026685555,0.000016485146],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00011350973,0.00023970217,0.00033815656,0.00013824156,0.00017370391,0.00025204755,0.0001655994,0.00013139076,0.0005248219],"category_scores_gemma":[0.00028922068,0.00016694971,0.00017351436,0.00017439562,0.00017954526,0.00016570206,0.0001843629,0.00019970741,0.00012114304],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000039395385,0.0000044565213,0.0001412533,0.00001785254,0.0000029702603,0.000049672322,0.00002729518,0.000096328586,0.9992442,0.00001867431,0.000009268765,0.00034861613],"study_design_scores_gemma":[0.0000043508567,0.00004734163,0.0012479158,0.0000012550129,0.0000023356743,0.000026425281,0.000013428397,0.00047588014,0.9980325,0.0000048024526,0.00014131308,0.0000022464142],"about_ca_topic_score_codex":0.0011160254,"about_ca_topic_score_gemma":0.0027433177,"teacher_disagreement_score":0.0011160254,"about_ca_system_score_codex":0.000253694,"about_ca_system_score_gemma":0.00020216027,"threshold_uncertainty_score":0.002219081},"labels":[],"label_agreement":null},{"id":"W2030381120","doi":"10.1016/j.jnoncrysol.2012.08.015","title":"High quality amorphous–crystalline silicon heterostructure prepared by grid-biased remote radio-frequency plasma enhanced chemical vapor deposition","year":2012,"lang":"en","type":"article","venue":"Journal of Non-Crystalline Solids","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":13,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Toronto","funders":"Natural Sciences and Engineering Research Council of Canada; University of Toronto; Ontario Research Foundation","keywords":"Plasma-enhanced chemical vapor deposition; Materials science; Amorphous silicon; Heterojunction; Chemical vapor deposition; Optoelectronics; Amorphous solid; Silicon; Radio frequency; Wafer; Crystalline silicon; Carrier lifetime; Plasma; Chemistry; Telecommunications; Computer science; Crystallography","score_opus":0.008408817623699757,"score_gpt":0.23487780446700032,"score_spread":0.22646898684330058,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2030381120","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99537486,0.00028698426,0.0024506995,0.00003658372,0.00003191723,0.000011385441,0.00016237126,0.000057627978,0.0015874923],"genre_scores_gemma":[0.99633235,0.00014566282,0.0025313345,0.000009685406,0.0000055947535,0.000005231256,0.0001309268,0.0000142287645,0.0008250239],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99994874,0.0000031395818,0.0000028844047,0.000011658011,0.000024009545,0.000009613206],"domain_scores_gemma":[0.9999373,0.000008842066,0.000015390498,0.000010929891,0.000018045246,0.000009533858],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00009304517,0.00012840195,0.00021336427,0.0001625235,0.00016883393,0.00030929584,0.0002309643,0.00017805997,0.0006416454],"category_scores_gemma":[0.000115256364,0.0001770047,0.000081254286,0.00017176617,0.00018030888,0.00014874001,0.00011662315,0.00025900805,0.0001686132],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000010933168,0.0000026514267,0.000100189034,0.000016736787,0.0000028738125,0.00004002968,0.000011914951,0.000037843576,0.99939895,0.00010174728,0.000026328704,0.00024974547],"study_design_scores_gemma":[0.000015731228,0.00009895476,0.0029904672,0.0000038599,0.000013339414,0.0001414592,0.000034901987,0.0013006255,0.9944208,0.000048390066,0.00092747447,0.000003877599],"about_ca_topic_score_codex":0.00093119004,"about_ca_topic_score_gemma":0.0039398866,"teacher_disagreement_score":0.00093119004,"about_ca_system_score_codex":0.00019833223,"about_ca_system_score_gemma":0.00022382873,"threshold_uncertainty_score":0.002146542},"labels":[],"label_agreement":null},{"id":"W2030908966","doi":"10.1557/proc-814-i6.12","title":"Top Gate Tft for Large Area Electronics","year":2004,"lang":"en","type":"article","venue":"MRS Proceedings","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":2,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Materials science; Thin-film transistor; Threshold voltage; Optoelectronics; Gate dielectric; Plasma-enhanced chemical vapor deposition; Fabrication; Amorphous silicon; Field effect; Drain-induced barrier lowering; Dielectric; Subthreshold slope; Transistor; Electrical engineering; Silicon; Voltage; Nanotechnology; Crystalline silicon; Layer (electronics)","score_opus":0.00827087589417247,"score_gpt":0.2003323656053695,"score_spread":0.19206148971119702,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2030908966","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.34897423,0.093217194,0.32316014,0.011389534,0.015381612,0.0006534548,0.0050906036,0.008868832,0.19326445],"genre_scores_gemma":[0.7179652,0.025108129,0.12109077,0.001341318,0.0018307436,0.00022126251,0.0032180042,0.00075753685,0.12846713],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999287,0.0000052053097,0.000003144247,0.000013876352,0.00003477692,0.000014320466],"domain_scores_gemma":[0.99989164,0.000027247122,0.0000090838685,0.000016288803,0.000039616814,0.000016164955],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00013364806,0.0003281457,0.00039936573,0.00035667536,0.00056525576,0.000618416,0.0007402269,0.00060467364,0.00879297],"category_scores_gemma":[0.0003338146,0.00023056232,0.0002341086,0.00039007212,0.00022418496,0.00084408803,0.00023511497,0.000637997,0.0028270064],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00014559655,0.00003970186,0.00020824003,0.0007913536,0.000042376912,0.0004812007,0.00008227523,0.00057508564,0.8843883,0.011533513,0.030882036,0.07083036],"study_design_scores_gemma":[0.00003944122,0.00039943017,0.0012505874,0.00008839989,0.00009543897,0.0014802277,0.00008498124,0.008381523,0.78175,0.006742895,0.1996564,0.000030574316],"about_ca_topic_score_codex":0.00071099726,"about_ca_topic_score_gemma":0.001687235,"teacher_disagreement_score":0.00879297,"about_ca_system_score_codex":0.00045671148,"about_ca_system_score_gemma":0.00029122148,"threshold_uncertainty_score":0.029415429},"labels":[],"label_agreement":null},{"id":"W2031148363","doi":"10.1016/j.jnoncrysol.2005.08.042","title":"Low leakage current a-Si:H/a-SiC:H n–i–p photodiode with Cr/a-SiN front contact","year":2006,"lang":"en","type":"article","venue":"Journal of Non-Crystalline Solids","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":2,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Photodiode; Materials science; Optoelectronics; Leakage (economics)","score_opus":0.006200877251559498,"score_gpt":0.208106164834366,"score_spread":0.20190528758280651,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2031148363","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9814755,0.0011005654,0.00919698,0.00034758195,0.00013871175,0.00007173406,0.00050147716,0.0008398571,0.0063275513],"genre_scores_gemma":[0.98908395,0.00015665698,0.0061812312,0.00008963639,0.00004216755,0.00002065768,0.00009971959,0.000056381286,0.00426952],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99963593,0.0000339432,0.000023955135,0.00011983417,0.00011831094,0.00006802168],"domain_scores_gemma":[0.9993771,0.0001662934,0.000089109126,0.00013250632,0.00017148656,0.00006361126],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00035223222,0.00032985228,0.0005108682,0.00039181666,0.00038664887,0.0005573743,0.0009800302,0.0009636066,0.0032133777],"category_scores_gemma":[0.0004798378,0.0002818749,0.00024139178,0.0005011901,0.00031500385,0.000619639,0.00027439135,0.0004334081,0.0009709792],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0004062929,0.000057071415,0.0006811829,0.000108519635,0.000027191583,0.00025461108,0.000068304435,0.00009457094,0.9939196,0.000275708,0.0006592462,0.0034477077],"study_design_scores_gemma":[0.00008303654,0.00060572557,0.008040698,0.00001831844,0.000057329617,0.0005950514,0.00004799781,0.0026186882,0.98518395,0.0001287262,0.0025985844,0.000021844535],"about_ca_topic_score_codex":0.00072324637,"about_ca_topic_score_gemma":0.0017887496,"teacher_disagreement_score":0.0032133777,"about_ca_system_score_codex":0.00043055852,"about_ca_system_score_gemma":0.00030858157,"threshold_uncertainty_score":0.010749817},"labels":[],"label_agreement":null},{"id":"W2031548345","doi":"10.1117/12.826629","title":"Efficiency enhancement of thin film silicon solar cells on plastic substrates using distributed Bragg reflectors","year":2009,"lang":"en","type":"article","venue":"Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Materials science; Optoelectronics; Silicon; Amorphous silicon; Energy conversion efficiency; Solar cell; Plasmonic solar cell; Polymer solar cell; Short circuit; Amorphous solid; Thin film; Solar cell efficiency; Optics; Crystalline silicon; Nanotechnology; Voltage; Electrical engineering","score_opus":0.011739345464412198,"score_gpt":0.2230398909213784,"score_spread":0.21130054545696622,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2031548345","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9969195,0.00039441953,0.0016796701,0.000030589526,0.00001698203,0.000007623738,0.00003411441,0.00004723029,0.0008698465],"genre_scores_gemma":[0.99694556,0.00036343755,0.0018005839,0.000013037093,0.000008309887,0.0000041677436,0.000032690936,0.00001501117,0.0008171256],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99978966,0.00002074068,0.000012833504,0.000032668777,0.00010021845,0.00004383438],"domain_scores_gemma":[0.9997292,0.00010456776,0.000050655683,0.000041018935,0.000057796344,0.00001671333],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00015939616,0.00041647506,0.00037945365,0.00022149559,0.00016683165,0.00049549015,0.0003740988,0.00026032043,0.00079693843],"category_scores_gemma":[0.00033937945,0.00022265632,0.00024559814,0.0001977395,0.00027243915,0.00033989167,0.00025871312,0.0003221311,0.00023753787],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00003293222,0.000009604355,0.00025276406,0.000022136759,0.0000073238184,0.000048708,0.000016614757,0.00025274503,0.99813193,0.000047832324,0.000019115374,0.0011581794],"study_design_scores_gemma":[0.0000036022354,0.00004238345,0.00070363184,0.0000015079625,0.000005897907,0.000026888914,0.000009740015,0.0007889375,0.99826366,0.000006395558,0.00014454077,0.000002874191],"about_ca_topic_score_codex":0.00081990316,"about_ca_topic_score_gemma":0.001215968,"teacher_disagreement_score":0.00081990316,"about_ca_system_score_codex":0.0002526358,"about_ca_system_score_gemma":0.00011469164,"threshold_uncertainty_score":0.0026660562},"labels":[],"label_agreement":null},{"id":"W2032325087","doi":"10.1116/1.2716671","title":"Structural and electrical characteristics of microcrystalline silicon prepared by hot-wire chemical vapor deposition using a graphite filament","year":2007,"lang":"en","type":"article","venue":"Journal of Vacuum Science & Technology A Vacuum Surfaces and Films","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":5,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Simon Fraser University","funders":"","keywords":"Chemical vapor deposition; Materials science; Graphite; Microcrystalline; Silane; Silicon; Raman spectroscopy; Protein filament; Substrate (aquarium); Analytical Chemistry (journal); Deposition (geology); Chemical engineering; Composite material; Metallurgy; Nanotechnology; Chemistry; Crystallography; Optics","score_opus":0.005904213295953646,"score_gpt":0.21819926676108575,"score_spread":0.2122950534651321,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2032325087","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99843997,0.0002415189,0.00041602037,0.000017305565,0.000007766211,0.000005121431,0.00023193065,0.000020328727,0.0006201225],"genre_scores_gemma":[0.9977883,0.00018627397,0.0009517974,0.000008493784,0.0000045368233,0.0000074979407,0.00028778022,0.000011230352,0.0007541011],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99993324,0.0000032801083,0.0000035089186,0.000013926634,0.00003058332,0.000015479949],"domain_scores_gemma":[0.99981815,0.000057759054,0.00004475242,0.000017516844,0.000040854236,0.000020993128],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00007967651,0.00013387369,0.00014681269,0.00021377704,0.00011587702,0.00017190396,0.00019054954,0.00021536523,0.0009129873],"category_scores_gemma":[0.00021827014,0.00016605145,0.00010715555,0.00025809475,0.00012883956,0.000103027334,0.00006443993,0.00018419174,0.00015363959],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00003509522,0.0000041430253,0.00043203565,0.000020571451,0.0000041053227,0.000045999608,0.000023528539,0.00008874321,0.9986608,0.000029843042,0.00003908447,0.0006160881],"study_design_scores_gemma":[0.000006273546,0.00017668658,0.014909367,0.000004193267,0.000011183633,0.00010435061,0.000034719884,0.0010652018,0.9830593,0.00001162251,0.00061270484,0.0000044220933],"about_ca_topic_score_codex":0.0015558855,"about_ca_topic_score_gemma":0.0031067275,"teacher_disagreement_score":0.0015558855,"about_ca_system_score_codex":0.00028245547,"about_ca_system_score_gemma":0.00013420165,"threshold_uncertainty_score":0.0030936003},"labels":[],"label_agreement":null},{"id":"W2034989845","doi":"10.1116/1.1472427","title":"Modeling of the static and dynamic behavior of hydrogenated amorphous silicon thin-film transistors","year":2002,"lang":"en","type":"article","venue":"Journal of Vacuum Science & Technology A Vacuum Surfaces and Films","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":58,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Thin-film transistor; Amorphous silicon; Materials science; Amorphous solid; Transistor; Silicon; Optoelectronics; Voltage; Computer science; Nanotechnology; Electrical engineering; Layer (electronics); Crystalline silicon; Chemistry; Engineering; Crystallography","score_opus":0.00919606854123927,"score_gpt":0.20341270326749097,"score_spread":0.1942166347262517,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2034989845","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.44834653,0.0015632696,0.5224913,0.0005044696,0.00014683172,0.0001642832,0.0011597801,0.0012893208,0.024334354],"genre_scores_gemma":[0.9700565,0.00091445725,0.020190075,0.000056829376,0.000027313044,0.00015310982,0.0003418896,0.000065875705,0.008193997],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9998876,0.000015985768,0.0000062131653,0.000019981104,0.000050788713,0.000019406452],"domain_scores_gemma":[0.99984634,0.00007524783,0.000021623086,0.000016779399,0.000033176886,0.000006885135],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00016099667,0.00039672156,0.00037055364,0.0003024643,0.00024994524,0.00044943494,0.0010417079,0.0008937074,0.0014171252],"category_scores_gemma":[0.0005632065,0.00031353932,0.00052938785,0.00027030052,0.00037284504,0.0008330414,0.00019329792,0.00036660774,0.0002878365],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000033136406,0.000021282893,0.00042525533,0.00006466174,0.000022445794,0.00017642244,0.000043268337,0.96373945,0.025789415,0.0054214634,0.0002448239,0.00401835],"study_design_scores_gemma":[0.0000043288564,0.0000130649605,0.00012351839,0.0000021843443,0.000005000205,0.000020395204,0.0000037279515,0.99645126,0.002191162,0.0008155309,0.00036645975,0.0000033856381],"about_ca_topic_score_codex":0.0038307745,"about_ca_topic_score_gemma":0.0028337366,"teacher_disagreement_score":0.0038307745,"about_ca_system_score_codex":0.0006203398,"about_ca_system_score_gemma":0.000587443,"threshold_uncertainty_score":0.007616937},"labels":[],"label_agreement":null},{"id":"W2036114045","doi":"10.1016/s0038-1098(01)00422-7","title":"Disorder and the optical properties of amorphous silicon grown by molecular beam epitaxy","year":2001,"lang":"en","type":"article","venue":"Solid State Communications","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":39,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Institute for Microstructural Sciences; National Research Council Canada; University of Regina","funders":"Natural Sciences and Engineering Research Council of Canada; CMC Microsystems","keywords":"Molecular beam epitaxy; Silicon; Substrate (aquarium); Amorphous solid; Amorphous silicon; Materials science; Epitaxy; Infrared; Hydrogen; Crystalline silicon; Optoelectronics; Analytical Chemistry (journal); Chemistry; Crystallography; Nanotechnology; Optics; Organic chemistry; Physics","score_opus":0.012341455469251679,"score_gpt":0.21549846767117048,"score_spread":0.2031570122019188,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2036114045","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.997489,0.0005162957,0.00039345454,0.000101829224,0.000011774061,0.0000025631057,0.00006662125,0.000021994158,0.0013964887],"genre_scores_gemma":[0.99921095,0.000199986,0.00012790537,0.000008835307,0.000009529549,0.0000015301888,0.00005955281,0.000007334596,0.00037423853],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999541,0.0000057614043,0.000002729136,0.0000071159857,0.000017259923,0.00001299093],"domain_scores_gemma":[0.99969137,0.00015343845,0.00007058347,0.000023299852,0.000037190155,0.000024220528],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0001229336,0.000118012445,0.00014918232,0.00037638916,0.00023644627,0.00055424345,0.00015782766,0.00020175801,0.0008080274],"category_scores_gemma":[0.00063300144,0.00014453153,0.0000556746,0.0003075568,0.000406415,0.0003302248,0.0001352965,0.0002252842,0.0000982505],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0005915551,0.0000816177,0.008199494,0.00011786116,0.000026963267,0.00027143676,0.0002269025,0.0070918202,0.9648261,0.014107454,0.0008008397,0.0036580223],"study_design_scores_gemma":[0.00009907454,0.00038275495,0.0314067,0.000033762113,0.00006063986,0.00030761823,0.00036044736,0.1041125,0.85266006,0.00650354,0.0040267603,0.000046066867],"about_ca_topic_score_codex":0.0019808223,"about_ca_topic_score_gemma":0.003073274,"teacher_disagreement_score":0.0019808223,"about_ca_system_score_codex":0.00034205924,"about_ca_system_score_gemma":0.00020740516,"threshold_uncertainty_score":0.0039386153},"labels":[],"label_agreement":null},{"id":"W2037465096","doi":"10.1116/1.1464841","title":"1/f noise of amorphous indium oxide","year":2002,"lang":"en","type":"article","venue":"Journal of Vacuum Science & Technology A Vacuum Surfaces and Films","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":2,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Saskatchewan","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Amorphous solid; Oxygen; Noise power; Oxide; Noise (video); Conductivity; Materials science; Indium; Analytical Chemistry (journal); Metal; Spectral line; Chemistry; Physics; Metallurgy; Crystallography; Power (physics); Thermodynamics; Physical chemistry","score_opus":0.009023590833875174,"score_gpt":0.1948267160809819,"score_spread":0.18580312524710674,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2037465096","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99700075,0.000152864,0.0018364274,0.00007672929,0.000008904297,0.0000030653684,0.00006731005,0.00007447773,0.000779415],"genre_scores_gemma":[0.9994004,0.00005216667,0.00030295225,0.000009215105,0.0000041837156,0.0000015848534,0.000047335496,0.000004661138,0.00017755629],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998305,0.00002087245,0.000006329767,0.00004526954,0.00006256175,0.00003448944],"domain_scores_gemma":[0.99970526,0.00013560029,0.000058730857,0.000026224163,0.00004827384,0.00002582065],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00019553464,0.00022498367,0.00020757016,0.00045007592,0.00023365323,0.00031144582,0.00026531148,0.00031233966,0.0005768388],"category_scores_gemma":[0.0010179136,0.00009707874,0.00009096602,0.00024578578,0.00030630644,0.00021174479,0.0001251573,0.00021065396,0.00007532596],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00048157212,0.000090177906,0.0056470116,0.00008681427,0.00002472376,0.0006246355,0.0003565218,0.003961276,0.9781909,0.00091902894,0.00031382174,0.009303509],"study_design_scores_gemma":[0.000042360014,0.0007857126,0.08260169,0.00004560213,0.000058832822,0.001046448,0.0002241315,0.11606233,0.79579264,0.0012990237,0.0019816798,0.000059428872],"about_ca_topic_score_codex":0.0018095726,"about_ca_topic_score_gemma":0.0011526166,"teacher_disagreement_score":0.0018095726,"about_ca_system_score_codex":0.00047529195,"about_ca_system_score_gemma":0.000090438676,"threshold_uncertainty_score":0.0035981536},"labels":[],"label_agreement":null},{"id":"W2037651922","doi":"10.1142/s0219581x14500203","title":"Surface Roughness Characterization of <font>ZnO</font>: <font>TiO</font><sub>2</sub>-Organic Blended Solar Cells Layers by Atomic Force Microscopy and Fractal Analysis","year":2014,"lang":"en","type":"article","venue":"International Journal of Nanoscience","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":16,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Queen's University","funders":"","keywords":"Chlorobenzene; Materials science; Surface roughness; Nanometre; Surface finish; Characterization (materials science); Organic solar cell; Fractal; Fractal dimension; Atomic force microscopy; Analytical Chemistry (journal); Solar cell; Chemical engineering; Nanotechnology; Composite material; Optoelectronics; Polymer; Chromatography; Chemistry","score_opus":0.004142594570877672,"score_gpt":0.20677089462142378,"score_spread":0.2026283000505461,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2037651922","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99306643,0.00023995551,0.0058696726,0.000021888207,0.00000657316,0.000007239756,0.0002572808,0.000050777533,0.00048010328],"genre_scores_gemma":[0.99272937,0.00015497819,0.006538755,0.000011214748,0.000004694204,0.000010616694,0.0001973999,0.00001441794,0.00033843974],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998971,0.0000057001184,0.000006455613,0.000018555951,0.000058714177,0.000013351693],"domain_scores_gemma":[0.99980015,0.000055790133,0.000048444275,0.000017219587,0.00006435966,0.000014170904],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00010705363,0.00017953773,0.0001590127,0.0005019055,0.000114661125,0.00028868762,0.00013899246,0.00027630143,0.00050603045],"category_scores_gemma":[0.0003271302,0.00014091466,0.00016563998,0.00021826038,0.00016883442,0.00018490672,0.00012251326,0.00020567376,0.00008208408],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000017103757,0.00000398888,0.00088383816,0.00001731711,0.000004479544,0.00003183415,0.00002246007,0.0003476142,0.9972203,0.00002423425,0.000020679134,0.0014060911],"study_design_scores_gemma":[0.000007563645,0.00008977173,0.090222456,0.0000073541696,0.000031840613,0.00034671123,0.0001420988,0.018674474,0.8893683,0.000112921814,0.00096970313,0.000026852149],"about_ca_topic_score_codex":0.0010055011,"about_ca_topic_score_gemma":0.0014580098,"teacher_disagreement_score":0.0010055011,"about_ca_system_score_codex":0.00020432391,"about_ca_system_score_gemma":0.00005617832,"threshold_uncertainty_score":0.0019993782},"labels":[],"label_agreement":null},{"id":"W2039196003","doi":"10.1007/s11664-004-0142-6","title":"High mobility poly-Ge thin-film transistors fabricated on flexible plastic substrates at temperatures below 130°C","year":2004,"lang":"en","type":"article","venue":"Journal of Electronic Materials","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":34,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Acadia University","funders":"","keywords":"Materials science; Crystallization; Composite material; Thin-film transistor; Substrate (aquarium); Stress (linguistics); Polyethylene terephthalate; Layer (electronics); Thin film; Transistor; Drop (telecommunication); Optoelectronics; Nanotechnology; Electrical engineering; Chemical engineering","score_opus":0.006659441537930648,"score_gpt":0.20159875664110188,"score_spread":0.19493931510317122,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2039196003","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99520516,0.00077399943,0.0017329666,0.00007106761,0.0000484866,0.000020177054,0.00024216172,0.00009394461,0.0018120658],"genre_scores_gemma":[0.99445903,0.00044236775,0.0024152782,0.000022661747,0.000010823008,0.00002723474,0.00020857746,0.000046444104,0.002367684],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998561,0.00001010868,0.000006656003,0.0000324176,0.000041290456,0.00005345956],"domain_scores_gemma":[0.999742,0.0001061665,0.000040927553,0.000044255095,0.00003733974,0.00002938644],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00015835572,0.00043318365,0.0004309209,0.00035283042,0.0004195531,0.0004599123,0.0006114271,0.00043740866,0.0014930961],"category_scores_gemma":[0.00034074593,0.00039739377,0.00020926085,0.00035193967,0.0003607255,0.0006048996,0.0002818392,0.0004811424,0.00044513162],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000117182215,0.000008793126,0.00014599328,0.000048384893,0.000010479605,0.00014228708,0.000049414823,0.00011498444,0.99852705,0.00009981898,0.00009407041,0.0006416125],"study_design_scores_gemma":[0.000018460323,0.00012838101,0.002653787,0.000010811172,0.000018523158,0.000110641166,0.00003991292,0.00070454413,0.99576366,0.00005491943,0.00048764554,0.000008548859],"about_ca_topic_score_codex":0.0010405186,"about_ca_topic_score_gemma":0.0034853597,"teacher_disagreement_score":0.0014930961,"about_ca_system_score_codex":0.0003201853,"about_ca_system_score_gemma":0.00018995725,"threshold_uncertainty_score":0.004994929},"labels":[],"label_agreement":null},{"id":"W2040450755","doi":"10.1063/1.3029704","title":"A comparative study of plasma-enhanced chemical vapor gate dielectrics for solution-processed polymer thin-film transistor circuit integration","year":2008,"lang":"en","type":"article","venue":"Journal of Applied Physics","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":13,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Xerox (Canada); University of Waterloo","funders":"","keywords":"Plasma-enhanced chemical vapor deposition; Materials science; Thin-film transistor; Optoelectronics; Gate dielectric; Dielectric; Silicon nitride; Chemical vapor deposition; Silicon; Transistor; Gate oxide; Nanotechnology; Layer (electronics); Electrical engineering; Voltage","score_opus":0.030091945644121283,"score_gpt":0.2351821351365441,"score_spread":0.2050901894924228,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2040450755","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9877071,0.0048808316,0.0039859326,0.000034381883,0.000034292712,0.000027531145,0.00007528725,0.000048343365,0.0032064163],"genre_scores_gemma":[0.9825279,0.0043541268,0.010039897,0.000021055122,0.000019593012,0.000026613785,0.00020455736,0.00002874046,0.0027775026],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999049,0.0000074389736,0.0000041815265,0.00001826078,0.000047291105,0.00001793948],"domain_scores_gemma":[0.99992096,0.000025986714,0.00001543306,0.000008325139,0.000019175604,0.000010142931],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000115670795,0.0002327696,0.00020560317,0.00017547264,0.00013079424,0.00036629662,0.00026375585,0.00022326986,0.0006862522],"category_scores_gemma":[0.0002416695,0.0001235686,0.00020163224,0.00023512394,0.00009994785,0.00028190232,0.0001190808,0.00019781342,0.00015987137],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000029897506,0.000021747725,0.00021343253,0.00008197227,0.000010274779,0.00006933662,0.00001913497,0.0003271866,0.9952304,0.00014473431,0.000028681385,0.0038231148],"study_design_scores_gemma":[0.0000067130936,0.00037439115,0.0020043412,0.000008276009,0.000018754561,0.00025503393,0.000023399245,0.0021609925,0.99176085,0.000029691028,0.003353765,0.0000036996723],"about_ca_topic_score_codex":0.00041682436,"about_ca_topic_score_gemma":0.00083247287,"teacher_disagreement_score":0.0006862522,"about_ca_system_score_codex":0.00022360966,"about_ca_system_score_gemma":0.00015260761,"threshold_uncertainty_score":0.0022957325},"labels":[],"label_agreement":null},{"id":"W2040856193","doi":"10.1109/ted.2006.887220","title":"Stability of nc-Si:H TFTs With Silicon Nitride Gate Dielectric","year":2007,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":36,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Thin-film transistor; Materials science; Gate dielectric; Dielectric; Silicon nitride; Optoelectronics; Ohmic contact; Silicon; Amorphous solid; Amorphous silicon; PMOS logic; Transistor; Analytical Chemistry (journal); Nanotechnology; Electrical engineering; Crystallography; Crystalline silicon; Chemistry; Voltage; Organic chemistry","score_opus":0.008723043750223775,"score_gpt":0.21103014584762111,"score_spread":0.20230710209739733,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2040856193","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99799097,0.00037245543,0.00085902686,0.00003982937,0.00001140019,0.000004792073,0.00025994188,0.000020741545,0.00044095717],"genre_scores_gemma":[0.998324,0.0001747007,0.00059728243,0.000013212385,0.000007069787,0.000007748316,0.0002996213,0.000010655105,0.0005657998],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.999811,0.000010872189,0.000010183345,0.00007117984,0.00006670466,0.000030127774],"domain_scores_gemma":[0.9995987,0.00011895933,0.00006162807,0.000036800255,0.00015663088,0.000027348568],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00019711509,0.00018436745,0.00017956957,0.00008868333,0.00022881058,0.00024491837,0.00028442303,0.00034132772,0.00061304757],"category_scores_gemma":[0.00065428246,0.000080045786,0.000118743694,0.00015536307,0.00022636185,0.0003427114,0.00011064927,0.00017935192,0.000204426],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000118899494,0.000006634648,0.0012757216,0.00002168499,0.000011579675,0.00005827373,0.00005667022,0.00026066657,0.9968022,0.000030305682,0.000058509173,0.0012988207],"study_design_scores_gemma":[0.0000058266446,0.00011094425,0.007754581,0.0000021853773,0.000015342383,0.00009461219,0.000037444563,0.0025068324,0.98900676,0.000015112589,0.00044488514,0.0000055109404],"about_ca_topic_score_codex":0.0034614229,"about_ca_topic_score_gemma":0.0032993567,"teacher_disagreement_score":0.0034614229,"about_ca_system_score_codex":0.00048723855,"about_ca_system_score_gemma":0.0001587435,"threshold_uncertainty_score":0.0068825483},"labels":[],"label_agreement":null},{"id":"W2040860355","doi":"10.1557/opl.2014.717","title":"Optimization of the protocrystalline <i>p</i>-layer in <i>a</i>-Si:H-based <i>n</i>-<i>i</i>-<i>p</i> photodiodes","year":2014,"lang":"en","type":"article","venue":"MRS Proceedings","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"University of Waterloo","keywords":"Materials science; Photodiode; Optoelectronics; Quantum efficiency; Band gap; Layer (electronics); Doping; Amorphous solid; Wavelength; Analytical Chemistry (journal); Nanotechnology","score_opus":0.007135094714217704,"score_gpt":0.18304839133124143,"score_spread":0.17591329661702373,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2040860355","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9842821,0.0015477575,0.008604998,0.00022724365,0.00005799194,0.0000674119,0.0007433602,0.00022146005,0.004247733],"genre_scores_gemma":[0.98720306,0.000880105,0.009329279,0.000045051725,0.000008421005,0.000064941276,0.0003185815,0.000058147343,0.0020923794],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99987936,0.000006774214,0.000007464146,0.000040558163,0.000043028427,0.000022752803],"domain_scores_gemma":[0.999887,0.000018815395,0.00003836547,0.0000118486505,0.000031314925,0.000012593591],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00017036308,0.00049655256,0.00028790729,0.00015190637,0.0002718504,0.00061856245,0.0007773375,0.00039327424,0.0012005034],"category_scores_gemma":[0.00030127197,0.00029586288,0.00022277907,0.00023980161,0.00013397637,0.00051794667,0.00025312693,0.0003430806,0.0005049656],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00006165708,0.000024234932,0.00035769306,0.00014040525,0.000019964791,0.00004755493,0.000027103553,0.0010257646,0.9957639,0.00024289735,0.00024250017,0.0020463471],"study_design_scores_gemma":[0.000013393522,0.00013539381,0.0013108109,0.0000070458123,0.000022359556,0.00005338024,0.000034278815,0.0037667688,0.9927462,0.000050335544,0.0018522925,0.000007752101],"about_ca_topic_score_codex":0.0021747446,"about_ca_topic_score_gemma":0.006539975,"teacher_disagreement_score":0.0021747446,"about_ca_system_score_codex":0.0008993954,"about_ca_system_score_gemma":0.0005982829,"threshold_uncertainty_score":0.006525576},"labels":[],"label_agreement":null},{"id":"W2040869351","doi":"10.1557/proc-1066-a19-04","title":"High Fill Factor a-Si:H Sensor Arrays with Reduced Pixel Crosstalk","year":2008,"lang":"en","type":"article","venue":"MRS Proceedings","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Materials science; Optoelectronics; Photodiode; Pixel; Photodetector; Image sensor; Capacitance; Backplane; Dot pitch; Active matrix; Dielectric; Amorphous silicon; Silicon; Optics; Thin-film transistor; Layer (electronics); Computer science; Nanotechnology; Computer hardware; Crystalline silicon; Electrode","score_opus":0.013372595864216146,"score_gpt":0.18484425470993682,"score_spread":0.17147165884572066,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2040869351","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.93608546,0.0010886334,0.048049472,0.0008605519,0.00021471451,0.00007015984,0.00065083307,0.0022805107,0.010699716],"genre_scores_gemma":[0.932843,0.000237158,0.056781884,0.00041877985,0.00014289499,0.000052771557,0.00037353233,0.00014590884,0.009004027],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.999595,0.000034993238,0.000015771213,0.000107525666,0.00019603001,0.00005072274],"domain_scores_gemma":[0.99956554,0.000099250195,0.00009286121,0.00004946023,0.00013098228,0.00006193558],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00031300887,0.00046927496,0.000471519,0.00025379026,0.00031107664,0.0008490535,0.00092722947,0.00090697,0.0018716503],"category_scores_gemma":[0.0004117378,0.00046554135,0.00017068404,0.00032397686,0.00032809563,0.0007761147,0.00039691594,0.0004263873,0.00081877696],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00008985571,0.000035564135,0.00025536504,0.00003053521,0.00001118259,0.000034027667,0.00002411706,0.00024296953,0.9958347,0.00022751052,0.00055689574,0.002657256],"study_design_scores_gemma":[0.000042115345,0.0001986551,0.0015132678,0.0000027968247,0.00001379321,0.00017094627,0.000020020505,0.00390786,0.99234736,0.00010128714,0.0016688354,0.000012934175],"about_ca_topic_score_codex":0.0006098275,"about_ca_topic_score_gemma":0.0024583298,"teacher_disagreement_score":0.0018716503,"about_ca_system_score_codex":0.000508056,"about_ca_system_score_gemma":0.00032918784,"threshold_uncertainty_score":0.006261289},"labels":[],"label_agreement":null},{"id":"W2041763400","doi":"10.1116/1.2194933","title":"Nanoscale channel and small area amorphous silicon vertical thin film transistor","year":2006,"lang":"en","type":"article","venue":"Journal of Vacuum Science & Technology A Vacuum Surfaces and Films","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":4,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Thin-film transistor; Amorphous silicon; Subthreshold slope; Materials science; Optoelectronics; Channel (broadcasting); Transistor; Oxide thin-film transistor; Silicon; Amorphous solid; Nanoscopic scale; Fabrication; Threshold voltage; Nanotechnology; Electrical engineering; Voltage; Crystalline silicon; Engineering; Layer (electronics); Chemistry; Crystallography","score_opus":0.008438645110736612,"score_gpt":0.18869571239928176,"score_spread":0.18025706728854515,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2041763400","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.7904675,0.017169613,0.13147956,0.00084317924,0.00078920455,0.00010670612,0.0008220779,0.00086419267,0.057457924],"genre_scores_gemma":[0.95981693,0.002730295,0.028885908,0.000107820866,0.00008834289,0.00004135248,0.00020378393,0.000023653814,0.008101861],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999498,0.0000024566368,0.0000016526507,0.000010684321,0.000025836523,0.000009518596],"domain_scores_gemma":[0.9999653,0.000013502477,0.000005926719,0.0000037609732,0.0000070791284,0.0000043884393],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00005448531,0.00008236149,0.00008228848,0.0000756178,0.00012234141,0.00019923251,0.00019530786,0.00019655356,0.0010460464],"category_scores_gemma":[0.000096969474,0.00006518879,0.00008753855,0.000072165785,0.00016096613,0.0002369163,0.00014224577,0.00015899405,0.00023122675],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000042428594,0.000016606338,0.00039075516,0.00012263896,0.0000073428523,0.0001796352,0.000026418733,0.0016918312,0.96308744,0.012610851,0.0010480937,0.020775879],"study_design_scores_gemma":[0.00003993951,0.00036184498,0.0024645287,0.000024032262,0.000026247559,0.00084155635,0.000036752128,0.027954789,0.9072979,0.0047260816,0.056203835,0.000022478833],"about_ca_topic_score_codex":0.0003340196,"about_ca_topic_score_gemma":0.0009208925,"teacher_disagreement_score":0.0010460464,"about_ca_system_score_codex":0.00021794325,"about_ca_system_score_gemma":0.00016505286,"threshold_uncertainty_score":0.003499329},"labels":[],"label_agreement":null},{"id":"W2045670970","doi":"10.4028/www.scientific.net/ssp.108-109.597","title":"Laser Scattering Tomography on Magnetic CZ-Si for Semiconductor Process Optimization","year":2005,"lang":"en","type":"article","venue":"Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Infineon Technologies (Canada)","funders":"","keywords":"Materials science; Wafer; Photoluminescence; Process optimization; Semiconductor; Scattering; Process (computing); Laser; Precipitation; Optoelectronics; Optics; Chemical engineering","score_opus":0.026937604415562626,"score_gpt":0.27222789169161726,"score_spread":0.24529028727605465,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2045670970","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.6980213,0.0011591426,0.28032854,0.00083380775,0.0000727686,0.0001599291,0.0013748267,0.0015457135,0.016503818],"genre_scores_gemma":[0.8170438,0.00053603086,0.17857708,0.000074115706,0.000018232324,0.0000680745,0.00056125247,0.0001521108,0.0029693595],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99986696,0.00001785161,0.0000058178694,0.0000210533,0.000075924894,0.000012406897],"domain_scores_gemma":[0.9997043,0.00013790431,0.000036473044,0.000049146445,0.000058164096,0.0000139599815],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00023389462,0.00030735048,0.00020936583,0.00038252192,0.00020876402,0.0003951489,0.00036867132,0.00030467458,0.00290613],"category_scores_gemma":[0.0005020897,0.00022995617,0.00016700067,0.00044361915,0.0003096903,0.00027601077,0.00031073758,0.00035726785,0.00045985833],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000085410655,0.000011025088,0.00048782013,0.000052954852,0.0000059835156,0.00007626836,0.000023968509,0.0053467234,0.9855424,0.0015902371,0.000353818,0.0064233597],"study_design_scores_gemma":[0.000041236683,0.000084851854,0.0036176017,0.000016697108,0.000011942583,0.00037957454,0.000040267452,0.13507666,0.8555881,0.0010037366,0.004116859,0.000022607002],"about_ca_topic_score_codex":0.0022652315,"about_ca_topic_score_gemma":0.0035070793,"teacher_disagreement_score":0.00290613,"about_ca_system_score_codex":0.0007822802,"about_ca_system_score_gemma":0.0005799239,"threshold_uncertainty_score":0.009721994},"labels":[],"label_agreement":null},{"id":"W2045985508","doi":"10.1557/proc-0910-a16-01-l09-01","title":"Backplane Requirements for Active Matrix Organic Light Emitting Diode Displays","year":2006,"lang":"en","type":"article","venue":"MRS Proceedings","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":11,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"AMOLED; Active matrix; OLED; Materials science; Backplane; Optoelectronics; Thin-film transistor; Threshold voltage; Electronic circuit; Diode; Brightness; Transistor; Computer science; Voltage; Electronic engineering; Electrical engineering; Nanotechnology; Computer hardware; Optics; Engineering","score_opus":0.0072592548776195314,"score_gpt":0.21395375447168438,"score_spread":0.20669449959406486,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2045985508","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.8511592,0.0038775872,0.07887167,0.0018384947,0.00034362788,0.00022502175,0.003037826,0.002796914,0.05784957],"genre_scores_gemma":[0.9645649,0.0011371133,0.018788036,0.0002556204,0.000121997306,0.00009984782,0.0020749148,0.00052718347,0.012430417],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99924785,0.00005065699,0.000031592528,0.00006918405,0.00041095464,0.00018974833],"domain_scores_gemma":[0.99860424,0.00066031585,0.00014438728,0.00006028441,0.00046174673,0.00006900307],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00046530532,0.0007395289,0.00068400643,0.00054161757,0.0008972872,0.0021207198,0.0009301242,0.0014956205,0.011003297],"category_scores_gemma":[0.0018535674,0.00051971566,0.0002980221,0.00036262829,0.0001725342,0.0016709015,0.0006283051,0.0007081159,0.0038165837],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0003755177,0.00007008221,0.0009565031,0.0002888399,0.000018945157,0.00031445082,0.00013995131,0.0033726885,0.9722385,0.0032773328,0.0026720956,0.016275082],"study_design_scores_gemma":[0.00008942578,0.00081914134,0.004843415,0.000078034864,0.00007503531,0.0009838344,0.00052263157,0.0410492,0.92497957,0.0017967398,0.024707317,0.000055797947],"about_ca_topic_score_codex":0.0020548364,"about_ca_topic_score_gemma":0.0036326956,"teacher_disagreement_score":0.011003297,"about_ca_system_score_codex":0.0009434902,"about_ca_system_score_gemma":0.0004732706,"threshold_uncertainty_score":0.036809683},"labels":[],"label_agreement":null},{"id":"W2045990729","doi":"10.1117/12.735091","title":"Graded silicon based PECVD thin film for photovoltaic applications","year":2007,"lang":"en","type":"article","venue":"Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Materials science; Plasma-enhanced chemical vapor deposition; Refractive index; Thin film; X-ray photoelectron spectroscopy; Ellipsometry; Silicon; Transmittance; Silicon oxynitride; Fourier transform infrared spectroscopy; Amorphous silicon; Silicon oxide; Silane; Analytical Chemistry (journal); Optoelectronics; Optics; Crystalline silicon; Chemistry; Silicon nitride; Nanotechnology; Composite material; Chemical engineering","score_opus":0.011406653426654983,"score_gpt":0.22257465111735877,"score_spread":0.2111679976907038,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2045990729","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9225417,0.004175375,0.048797816,0.0001797747,0.00026846427,0.00019544363,0.0010787639,0.00082063535,0.021942118],"genre_scores_gemma":[0.92991513,0.0022186122,0.05565987,0.00012575678,0.000021740256,0.00007794458,0.00087798206,0.00007823846,0.0110247675],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99993,0.0000025086813,0.0000037114182,0.0000144669775,0.00004052878,0.000008715892],"domain_scores_gemma":[0.99994934,0.000007485342,0.000008521789,0.0000099152,0.000020090854,0.000004639632],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000058377875,0.00027911432,0.00020803201,0.0001477077,0.000117220305,0.00027339696,0.0006601545,0.00027997143,0.0016530172],"category_scores_gemma":[0.00014098159,0.00017579518,0.0001363098,0.0002248505,0.00007720491,0.00020731977,0.00015782239,0.00033292247,0.0007580547],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000007142065,0.0000068012605,0.00008507461,0.000041172596,0.0000025711997,0.000041995263,0.0000040214904,0.000084853644,0.9971552,0.000098290395,0.000080007056,0.002392808],"study_design_scores_gemma":[0.0000046208047,0.000062519044,0.0010200612,0.0000067616575,0.000010697645,0.0001937861,0.000010501063,0.0014121962,0.99401855,0.00008506021,0.003171998,0.000003224061],"about_ca_topic_score_codex":0.0004024154,"about_ca_topic_score_gemma":0.001255994,"teacher_disagreement_score":0.0016530172,"about_ca_system_score_codex":0.00019660397,"about_ca_system_score_gemma":0.00012500069,"threshold_uncertainty_score":0.0055298805},"labels":[],"label_agreement":null},{"id":"W2046123741","doi":"10.1109/jsen.2012.2234450","title":"Characterization of Low Dark-Current Lateral Amorphous-Selenium Metal-Semiconductor-Metal Photodetectors","year":2013,"lang":"en","type":"article","venue":"IEEE Sensors Journal","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":14,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Dark current; Materials science; Photodetector; Optoelectronics; Photocurrent; Electrode; Polyimide; Contact resistance; Current density; Optics; Layer (electronics); Nanotechnology; Chemistry; Physics","score_opus":0.010499082917114095,"score_gpt":0.19953664887075662,"score_spread":0.18903756595364252,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2046123741","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9888765,0.0003815522,0.009252018,0.000036473913,0.0000081519765,0.00002754855,0.00032004688,0.00017637287,0.0009212253],"genre_scores_gemma":[0.9883483,0.00022544016,0.009708331,0.00002327594,0.000005086685,0.00003471725,0.00020511592,0.00002414528,0.0014256428],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99972636,0.000019483465,0.000019665324,0.000058653004,0.00014897739,0.000026840988],"domain_scores_gemma":[0.99961036,0.00013476289,0.00007400703,0.000049755818,0.00010858305,0.000022552173],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00022790635,0.00032762554,0.00037999154,0.00033614587,0.00023528698,0.0005893475,0.00069702405,0.00046342297,0.00096814195],"category_scores_gemma":[0.00064685923,0.00017489385,0.00019285169,0.00038869533,0.00027638205,0.00040465736,0.00030973638,0.00018617694,0.0004255559],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00007465794,0.00003793195,0.0026293308,0.00007643197,0.000015838696,0.00011747806,0.00007185585,0.0006622115,0.992031,0.00021726357,0.000091340575,0.003974717],"study_design_scores_gemma":[0.000011304954,0.00031891224,0.0058729146,0.000009190905,0.000017944534,0.00022669022,0.00007006494,0.009753341,0.9822923,0.000064574924,0.0013510935,0.000011665824],"about_ca_topic_score_codex":0.0007351198,"about_ca_topic_score_gemma":0.0012450234,"teacher_disagreement_score":0.00096814195,"about_ca_system_score_codex":0.00034154078,"about_ca_system_score_gemma":0.00028633903,"threshold_uncertainty_score":0.0032387376},"labels":[],"label_agreement":null},{"id":"W2047220965","doi":"10.1142/s0129156408006004","title":"NANOCRYSTALLINE SILICON THIN FILM TRANSISTORS FOR HIGH PERFORMANCE LARGE AREA ELECTRONICS","year":2008,"lang":"en","type":"article","venue":"International Journal of High Speed Electronics and Systems","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Thin-film transistor; Materials science; Transistor; Optoelectronics; Electronics; Threshold voltage; Transconductance; Electronic circuit; Amorphous silicon; Nanocrystalline silicon; Nanocrystalline material; Leakage (economics); Silicon; Electrical engineering; Backplane; Electronic engineering; Engineering physics; Voltage; Nanotechnology; Engineering; Crystalline silicon","score_opus":0.009925611199707213,"score_gpt":0.2046920435488316,"score_spread":0.19476643234912439,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2047220965","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.4540589,0.20657776,0.2653971,0.0036530069,0.0015294884,0.00024063341,0.00072838034,0.0015662997,0.06624843],"genre_scores_gemma":[0.7994229,0.047609203,0.1351975,0.0003845351,0.00030716692,0.00009857705,0.0002834908,0.00009781048,0.016598757],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999498,0.0000035382893,0.0000031601742,0.00000980281,0.000028098504,0.0000055503],"domain_scores_gemma":[0.9999387,0.000021523894,0.00000897134,0.000007501928,0.000017985587,0.00000534457],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00007810402,0.00021482198,0.00020809726,0.00016284305,0.00020129705,0.00034446086,0.0002927001,0.00037070469,0.0016445341],"category_scores_gemma":[0.00018501234,0.00010502219,0.0001523748,0.00021173712,0.00015852325,0.00040677798,0.00012757693,0.0003452624,0.00045333715],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0000414824,0.00001868448,0.00030632637,0.00037462413,0.000016107411,0.00021616567,0.00005715172,0.001689309,0.9346725,0.016378546,0.002175398,0.0440537],"study_design_scores_gemma":[0.000036666843,0.00029266984,0.0011481753,0.00010698625,0.000074170275,0.0014569924,0.00006871847,0.033223715,0.8636212,0.008550514,0.0913893,0.0000309856],"about_ca_topic_score_codex":0.0008046841,"about_ca_topic_score_gemma":0.0020646614,"teacher_disagreement_score":0.0016445341,"about_ca_system_score_codex":0.0005504183,"about_ca_system_score_gemma":0.00027962012,"threshold_uncertainty_score":0.005501449},"labels":[],"label_agreement":null},{"id":"W2047502407","doi":"10.1063/1.4869785","title":"Plasmonic metal nanocubes for broadband light absorption enhancement in thin-film a-Si solar cells","year":2014,"lang":"en","type":"article","venue":"Journal of Applied Physics","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":32,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Carleton University","funders":"","keywords":"Materials science; Plasmon; Optoelectronics; Plasmonic solar cell; Substrate (aquarium); Absorption (acoustics); Visible spectrum; Amorphous silicon; Thin film; Refractive index; Solar cell; Silicon; Surface plasmon resonance; Light scattering; Nanoparticle; Scattering; Optics; Nanotechnology; Polymer solar cell; Crystalline silicon","score_opus":0.007477641506185839,"score_gpt":0.19565351240659815,"score_spread":0.1881758709004123,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2047502407","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9864521,0.000239852,0.010099326,0.00007342478,0.000021250002,0.000021765698,0.00008646381,0.00010379428,0.00290197],"genre_scores_gemma":[0.9905743,0.00013575642,0.0085783275,0.000013114598,0.0000018528275,0.000018768118,0.000027697806,0.000013734167,0.00063639256],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999534,0.0000066704274,0.0000019833012,0.0000066782054,0.000023048326,0.000008251077],"domain_scores_gemma":[0.9999175,0.00003758454,0.0000126472705,0.0000063296056,0.00001666381,0.000009289386],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000101587975,0.00019382985,0.00032286378,0.00011214178,0.00019045254,0.00031570825,0.00038929403,0.0003733081,0.0006980048],"category_scores_gemma":[0.00030031241,0.00021467332,0.00024477433,0.0001192326,0.00016854698,0.0001809506,0.00016724177,0.0002354499,0.00013804845],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00015847322,0.00015381005,0.0012907733,0.00018191671,0.000038804104,0.0002614968,0.00010054081,0.39878446,0.5913434,0.001600023,0.00020873836,0.0058776406],"study_design_scores_gemma":[0.000039514034,0.0001163182,0.0006500386,0.000008818681,0.000017293132,0.000031185788,0.000037633316,0.8894111,0.10886841,0.0002247502,0.0005838473,0.000011163049],"about_ca_topic_score_codex":0.004897122,"about_ca_topic_score_gemma":0.0058680726,"teacher_disagreement_score":0.004897122,"about_ca_system_score_codex":0.0005580479,"about_ca_system_score_gemma":0.0004094923,"threshold_uncertainty_score":0.009737253},"labels":[],"label_agreement":null},{"id":"W2047534082","doi":"10.1117/12.877708","title":"Characterization and comparison of lateral amorphous semiconductors with embedded Frisch grid detectors on 0.18μm CMOS processed substrate for medical imaging applications","year":2011,"lang":"en","type":"article","venue":"Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"CMOS; Optoelectronics; Substrate (aquarium); Detector; Materials science; Noise (video); Electronic circuit; Computer science; Electrical engineering; Telecommunications","score_opus":0.012321232048764612,"score_gpt":0.21975334589431098,"score_spread":0.20743211384554636,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2047534082","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9927834,0.00032714187,0.005464757,0.000034498,0.000013406088,0.000015854095,0.00012492591,0.000088726585,0.0011472743],"genre_scores_gemma":[0.98844796,0.00022426245,0.009758137,0.00001886043,0.0000051570055,0.000013830362,0.00010629637,0.000017266813,0.0014081612],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99984217,0.000014953563,0.000009792879,0.000033857246,0.00008125898,0.000017916896],"domain_scores_gemma":[0.9994987,0.00015528,0.0001316514,0.00006410457,0.00012426355,0.0000259392],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00017803705,0.00021106009,0.00013378692,0.00018200373,0.00011316584,0.0003820154,0.00041261024,0.00029473956,0.00095145445],"category_scores_gemma":[0.000522178,0.00011548652,0.000094472525,0.00020919401,0.00017394737,0.00020402604,0.00011470335,0.000106274005,0.0002355817],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00005318205,0.000012364437,0.0015455724,0.00004696277,0.0000073315573,0.00009426183,0.000042724994,0.00029371813,0.9955617,0.0001406328,0.00004718729,0.0021542995],"study_design_scores_gemma":[0.000013218598,0.00066028856,0.012520072,0.000011531016,0.000036051184,0.0004409291,0.000094566094,0.004541721,0.98007584,0.000041624266,0.0015536988,0.000010481032],"about_ca_topic_score_codex":0.0007326475,"about_ca_topic_score_gemma":0.0017041041,"teacher_disagreement_score":0.00095145445,"about_ca_system_score_codex":0.00025738898,"about_ca_system_score_gemma":0.00019122753,"threshold_uncertainty_score":0.0031830072},"labels":[],"label_agreement":null},{"id":"W2048404163","doi":"10.1063/1.1836012","title":"Low-temperature copper-induced lateral growth of polycrystalline germanium assisted by external compressive stress","year":2005,"lang":"en","type":"article","venue":"Journal of Applied Physics","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":7,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Acadia University","funders":"","keywords":"Materials science; Tetragonal crystal system; Germanium; Annealing (glass); Transmission electron microscopy; Crystallite; Scanning electron microscope; Compressive strength; Copper; Amorphous solid; Crystallography; Composite material; Stress (linguistics); Metallurgy; Crystal structure; Silicon; Nanotechnology; Chemistry","score_opus":0.0069054086984970476,"score_gpt":0.2017163395513469,"score_spread":0.19481093085284987,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2048404163","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99694747,0.0001728727,0.0015540266,0.000016460905,0.000019317546,0.000011998758,0.00009087936,0.000043119904,0.0011438263],"genre_scores_gemma":[0.9968251,0.00013125128,0.0018818718,0.0000075088983,0.000004416649,0.0000147213095,0.00009777357,0.000016336004,0.0010210655],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99991846,0.0000053431268,0.0000040739255,0.000022310469,0.000029165956,0.000020594178],"domain_scores_gemma":[0.99990475,0.000018783134,0.000025576483,0.000019934188,0.000017632827,0.000013299791],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0000549744,0.00029777302,0.00017335957,0.00012538677,0.00011119441,0.00019218626,0.0002601408,0.00015726057,0.00057754264],"category_scores_gemma":[0.00013819846,0.00018101688,0.00011315353,0.00014983183,0.00019255825,0.00012734334,0.00025133006,0.0001865951,0.0001818639],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00001597104,0.000004121339,0.0000715674,0.00001804329,0.00000211468,0.00005075518,0.000008354706,0.00008278617,0.99931324,0.000038786115,0.0000252407,0.0003690017],"study_design_scores_gemma":[0.0000069043917,0.000043484306,0.00083915854,0.0000018233261,0.0000034413138,0.000047743502,0.0000063381344,0.0015644067,0.9969752,0.000010048859,0.00049900357,0.000002441833],"about_ca_topic_score_codex":0.0006465193,"about_ca_topic_score_gemma":0.0023554796,"teacher_disagreement_score":0.0006465193,"about_ca_system_score_codex":0.00024296006,"about_ca_system_score_gemma":0.00015802553,"threshold_uncertainty_score":0.0019320846},"labels":[],"label_agreement":null},{"id":"W2048411769","doi":"10.1116/1.1486006","title":"Amorphous silicon driver circuits for organic light-emitting diode displays","year":2002,"lang":"en","type":"article","venue":"Journal of Vacuum Science & Technology A Vacuum Surfaces and Films","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":74,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Institute for Microstructural Sciences; University of Waterloo","funders":"","keywords":"Transistor; Optoelectronics; Materials science; OLED; Thin-film transistor; Electronic circuit; Diode; Pixel; Threshold voltage; Amorphous silicon; Oxide thin-film transistor; Electrical engineering; Voltage; Silicon; Optics; Physics; Engineering; Crystalline silicon; Nanotechnology; Layer (electronics)","score_opus":0.01038688060249262,"score_gpt":0.2036205725186773,"score_spread":0.19323369191618467,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2048411769","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.5217068,0.0032552625,0.43281412,0.00091468083,0.00023909118,0.00026460903,0.00036638964,0.0026531331,0.037786014],"genre_scores_gemma":[0.9110061,0.0012947912,0.076523535,0.00016749221,0.00007524079,0.00006580843,0.000115702234,0.000058561214,0.010692751],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999621,0.0000044896715,0.0000021347048,0.000005970222,0.00001958005,0.0000057435327],"domain_scores_gemma":[0.99996316,0.000015053046,0.000005870901,0.0000031295351,0.000009742435,0.0000029816247],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0000601768,0.00013734022,0.00007945306,0.00007152821,0.00017834375,0.00040273485,0.000326902,0.00020390021,0.0025281252],"category_scores_gemma":[0.00014017744,0.000085633954,0.000104521954,0.000065361026,0.00007317378,0.0003341231,0.00011662282,0.00018126871,0.0003953175],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000094503695,0.0000516631,0.001042899,0.00023338775,0.000027785496,0.00031336644,0.00012771969,0.009815844,0.8799815,0.02858725,0.002923809,0.076800235],"study_design_scores_gemma":[0.0000899331,0.00085789204,0.0020613545,0.000054196767,0.00008837912,0.0010948002,0.00016169537,0.19200969,0.69103163,0.011131788,0.10138726,0.000031306732],"about_ca_topic_score_codex":0.00029257845,"about_ca_topic_score_gemma":0.0012130089,"teacher_disagreement_score":0.0025281252,"about_ca_system_score_codex":0.00024575464,"about_ca_system_score_gemma":0.00020616205,"threshold_uncertainty_score":0.008457422},"labels":[],"label_agreement":null},{"id":"W2048896220","doi":"10.1063/1.3385434","title":"A dimensionless joint density of states formalism for the quantitative characterization of the optical response of hydrogenated amorphous silicon","year":2010,"lang":"en","type":"article","venue":"Journal of Applied Physics","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":19,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of British Columbia, Okanagan Campus; University of British Columbia; University of Windsor","funders":"Natural Sciences and Engineering Research Council of Canada; CMC Microsystems","keywords":"Dimensionless quantity; Formalism (music); Amorphous silicon; Amorphous solid; Silicon; Materials science; Statistical physics; Physics; Quantum mechanics; Chemistry; Crystalline silicon; Crystallography; Optoelectronics","score_opus":0.012435472278564782,"score_gpt":0.2138303071874613,"score_spread":0.2013948349088965,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2048896220","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.026056724,0.0004968768,0.9683506,0.0001705652,0.00005849027,0.000066137734,0.00016115648,0.00015147917,0.0044880616],"genre_scores_gemma":[0.7040743,0.0017029824,0.28908193,0.00030427435,0.00011771283,0.0005732359,0.00043444088,0.00023918702,0.0034719608],"study_design_codex":"theoretical_or_conceptual","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99947184,0.0001729962,0.000036278467,0.000049577568,0.00023138346,0.000038042395],"domain_scores_gemma":[0.9988317,0.0006571373,0.000121665114,0.00026485726,0.00009538873,0.000029206198],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0016314036,0.000723679,0.00064843876,0.001402726,0.0005122252,0.0011737446,0.0014696913,0.0008203947,0.0022061698],"category_scores_gemma":[0.0039420016,0.00030755828,0.00085063133,0.001251849,0.0012737366,0.0029070708,0.0008339162,0.001333422,0.00034840158],"study_design_candidate":"simulation_or_modeling","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000025547437,0.0000695754,0.00064977974,0.00010995286,0.000032538846,0.00013955262,0.00014093608,0.17158653,0.015695225,0.80123514,0.0008766749,0.009438609],"study_design_scores_gemma":[0.0000046627424,0.000024959636,0.00026387422,0.000011569027,0.000010067346,0.0000550632,0.000027456232,0.86875117,0.0024180675,0.12666391,0.0017478102,0.000021366055],"about_ca_topic_score_codex":0.000978625,"about_ca_topic_score_gemma":0.0009973205,"teacher_disagreement_score":0.0022061698,"about_ca_system_score_codex":0.0009799788,"about_ca_system_score_gemma":0.00061109534,"threshold_uncertainty_score":0.008627832},"labels":[],"label_agreement":null},{"id":"W2049265142","doi":"10.1016/s0022-3093(01)01157-7","title":"Dielectric performance of low temperature silicon nitride films in a-Si:H TFTs","year":2002,"lang":"en","type":"article","venue":"Journal of Non-Crystalline Solids","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":19,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"University of Waterloo","keywords":"Materials science; Thin-film transistor; Plasma-enhanced chemical vapor deposition; Silicon nitride; Dielectric; Subthreshold slope; Optoelectronics; Gate dielectric; Amorphous solid; Threshold voltage; Amorphous silicon; Chemical vapor deposition; Silicon; Nitride; Subthreshold conduction; Transistor; Nanotechnology; Voltage; Electrical engineering; Crystalline silicon; Crystallography; Layer (electronics); Chemistry","score_opus":0.006748422928294754,"score_gpt":0.19342810804865362,"score_spread":0.18667968512035887,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2049265142","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99817705,0.00065173313,0.000224904,0.000048205104,0.00002456283,0.000004342979,0.00011644656,0.000030178815,0.0007226953],"genre_scores_gemma":[0.9981584,0.00032778448,0.00024747048,0.000019734367,0.000016468519,0.000004428926,0.00012308259,0.000011352343,0.0010914028],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99987113,0.000012572991,0.0000065875215,0.00002742637,0.00003858988,0.000043694123],"domain_scores_gemma":[0.99965966,0.0001251183,0.000044828616,0.000020297211,0.00010473363,0.000045346053],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00018310119,0.00021626757,0.0002863778,0.00021205028,0.0003308002,0.00048696902,0.00041739098,0.00040218164,0.0014886297],"category_scores_gemma":[0.0004678522,0.00016303943,0.00012720596,0.00024337227,0.0002291099,0.00039204216,0.00014586007,0.00029693783,0.0002958059],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0009147753,0.00005087783,0.001179499,0.00008808129,0.00002260178,0.00016522,0.0000866824,0.00081561494,0.99428326,0.0001208727,0.0002500109,0.0020223998],"study_design_scores_gemma":[0.000053017444,0.0009165915,0.0051873503,0.00002076565,0.000040846673,0.00013059222,0.00009348006,0.0044821226,0.9880925,0.000047883837,0.0009226837,0.000012116147],"about_ca_topic_score_codex":0.0033757412,"about_ca_topic_score_gemma":0.004187524,"teacher_disagreement_score":0.0033757412,"about_ca_system_score_codex":0.0005661376,"about_ca_system_score_gemma":0.00023919648,"threshold_uncertainty_score":0.0067121983},"labels":[],"label_agreement":null},{"id":"W2050283969","doi":"10.1116/1.1570833","title":"Comment on “Quantitative analysis of annealing-induced structure disordering in ion-implanted amorphous silicon,” by Ju-Yin Cheng <i>et al.</i>, J. Vacuum Science and Technology A <b>20</b>, 1855 (2002)","year":2003,"lang":"en","type":"article","venue":"Journal of Vacuum Science & Technology A Vacuum Surfaces and Films","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":3,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Université de Montréal","funders":"","keywords":"Annealing (glass); Amorphous solid; Silicon; Materials science; Amorphous silicon; Ion implantation; Ion; Engineering physics; Optoelectronics; Nanotechnology; Crystallography; Chemistry; Crystalline silicon; Physics; Metallurgy","score_opus":0.00899554883349568,"score_gpt":0.24569708877436922,"score_spread":0.23670153994087353,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2050283969","genre_codex":"commentary","genre_gemma":"commentary","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"commentary","genre_consensus":"commentary","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.0019154628,0.0062675374,0.0012255069,0.8334266,0.15289211,0.00006603378,0.0009945439,0.00043497846,0.0027771834],"genre_scores_gemma":[0.008903314,0.0035523316,0.0011132455,0.91638875,0.05791967,0.0001739476,0.0003910825,0.00014330703,0.011414362],"study_design_codex":"not_applicable","study_design_gemma":"not_applicable","domain_scores_codex":[0.99312955,0.0007329168,0.00081505784,0.0013098817,0.0034699142,0.00054259284],"domain_scores_gemma":[0.9804584,0.011413832,0.0015544113,0.0007046529,0.0050220145,0.0008467289],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0062530166,0.0018970907,0.001837604,0.0012993123,0.0043953257,0.0029601185,0.0059266654,0.028834686,0.0061737997],"category_scores_gemma":[0.026183508,0.0012918654,0.0023076346,0.0015980371,0.0044963667,0.0028644062,0.0018690072,0.023944695,0.0070524868],"study_design_candidate":"not_applicable","study_design_consensus":"not_applicable","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0002082318,0.000043686567,0.00043552704,0.00023100828,0.00006157604,0.0004215552,0.00014344562,0.00030617055,0.0017479978,0.0016763872,0.9907141,0.004010247],"study_design_scores_gemma":[0.00028666752,0.0002739847,0.005444904,0.00033629226,0.00021674986,0.00069038104,0.00038792717,0.0022051989,0.013309696,0.010613565,0.96599066,0.00024395164],"about_ca_topic_score_codex":0.01199988,"about_ca_topic_score_gemma":0.013865976,"teacher_disagreement_score":0.028834686,"about_ca_system_score_codex":0.0035652218,"about_ca_system_score_gemma":0.0031325773,"threshold_uncertainty_score":0.03306949},"labels":[],"label_agreement":null},{"id":"W2050594363","doi":"10.1889/1.3621109","title":"P‐81: Thin Beam Laser Crystallization Technology in AMOLED and AMLCD Applications","year":2011,"lang":"en","type":"article","venue":"SID Symposium Digest of Technical Papers","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Golder Associates (Canada)","funders":"","keywords":"Backplane; Materials science; Thin-film transistor; Transistor; Laser; Optoelectronics; AMOLED; Optics; Active matrix; Electrical engineering; Nanotechnology; Engineering; Physics","score_opus":0.006997680040728061,"score_gpt":0.1877351994413349,"score_spread":0.18073751940060684,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2050594363","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.8281025,0.0061326907,0.1351156,0.0009803325,0.00027296838,0.00015748227,0.00062444364,0.0016576886,0.026956297],"genre_scores_gemma":[0.9215323,0.0022065113,0.0666114,0.000110642715,0.00004381063,0.00008960334,0.00018510358,0.00008405413,0.009136507],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.999887,0.000009614244,0.0000045735014,0.000022530938,0.000059048147,0.000017376206],"domain_scores_gemma":[0.9999063,0.000023753339,0.00001733842,0.000012176935,0.00002767468,0.000012775176],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00016734816,0.00016059451,0.00022340294,0.0002850319,0.00039070364,0.0005099465,0.00049782096,0.000348762,0.0015065037],"category_scores_gemma":[0.00017975939,0.00018688178,0.0001694846,0.00024680988,0.00029085382,0.00045201695,0.0002796793,0.00040726084,0.0005863285],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00003644261,0.000012914304,0.00023124702,0.00008514245,0.000004264375,0.00011302294,0.00004390773,0.00042712706,0.9872329,0.0014376815,0.0005538492,0.0098214345],"study_design_scores_gemma":[0.000018068431,0.00009105748,0.0010253199,0.000013272327,0.000010146254,0.00041704625,0.00002913599,0.0058201365,0.9846772,0.00037655598,0.0075108144,0.000011301921],"about_ca_topic_score_codex":0.0016441997,"about_ca_topic_score_gemma":0.0018232551,"teacher_disagreement_score":0.0016441997,"about_ca_system_score_codex":0.0005953171,"about_ca_system_score_gemma":0.0005837824,"threshold_uncertainty_score":0.0050397515},"labels":[],"label_agreement":null},{"id":"W2052152724","doi":"10.1149/1.2356340","title":"Hydrogen Passivation and Channel Capping for Threshold Voltage Shift and Off-Current Reduction in Nanocrystalline Silicon TFTs","year":2006,"lang":"en","type":"article","venue":"ECS Transactions","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Thin-film transistor; Materials science; Threshold voltage; Optoelectronics; Nanocrystalline silicon; Subthreshold slope; Amorphous silicon; Silicon nitride; Passivation; Silicon; Gate dielectric; Nanocrystalline material; Amorphous solid; Transistor; Electrical engineering; Electronic engineering; Layer (electronics); Voltage; Nanotechnology; Crystalline silicon; Chemistry; Engineering; Crystallography","score_opus":0.01072322806864785,"score_gpt":0.20446418229163255,"score_spread":0.1937409542229847,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2052152724","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9950722,0.0006211966,0.0033153573,0.00006773678,0.000025639882,0.000013293602,0.00014410808,0.00005457393,0.00068587554],"genre_scores_gemma":[0.99507904,0.0003940217,0.0034830112,0.000022635904,0.000006816387,0.00001144304,0.0001139376,0.000021192633,0.00086779246],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999355,0.0000026213236,0.000003962571,0.000016390588,0.000021902866,0.00001958853],"domain_scores_gemma":[0.99992776,0.000014847961,0.000018306882,0.000013087269,0.000013991762,0.000011975438],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000061966646,0.00016027539,0.00022896555,0.00007719879,0.0001532533,0.00018480887,0.00024019313,0.00017514118,0.0004473958],"category_scores_gemma":[0.000120516954,0.00013601287,0.00016219467,0.00008074966,0.00020248417,0.00018247393,0.00012856515,0.0002601894,0.00011619646],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000015269743,0.0000025947138,0.000063633815,0.000011044189,0.0000014259356,0.000024550132,0.00000849275,0.000054496155,0.99924743,0.000022229086,0.000016672506,0.00053230685],"study_design_scores_gemma":[0.000002126235,0.000025691708,0.00040959188,6.3975716e-7,0.0000029247335,0.000034295736,0.0000051865254,0.0003174871,0.99898344,0.000008679528,0.00020863551,0.0000012359335],"about_ca_topic_score_codex":0.0021594514,"about_ca_topic_score_gemma":0.0033863764,"teacher_disagreement_score":0.0021594514,"about_ca_system_score_codex":0.0003219911,"about_ca_system_score_gemma":0.0002431167,"threshold_uncertainty_score":0.0042937994},"labels":[],"label_agreement":null},{"id":"W2052275329","doi":"10.1002/pssc.200881453","title":"Amorphisation and sub‐100‐nm exfoliation of hydrogen‐ion‐implanted silicon","year":2009,"lang":"en","type":"article","venue":"Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":2,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Institut National de la Recherche Scientifique","funders":"","keywords":"Exfoliation joint; Amorphous solid; Materials science; Silicon; Transmission electron microscopy; Raman spectroscopy; Annealing (glass); Ion; Raman scattering; Ion implantation; Analytical Chemistry (journal); Crystallography; Nanotechnology; Chemistry; Composite material; Graphene; Optics; Optoelectronics","score_opus":0.04094580001750481,"score_gpt":0.31632434790289155,"score_spread":0.27537854788538674,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2052275329","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9973131,0.00037284047,0.0010214563,0.000016714492,0.000011547784,0.000005482036,0.00008437826,0.0000408472,0.0011336878],"genre_scores_gemma":[0.9986904,0.00013554055,0.0005002531,0.000008881937,0.0000022993552,0.0000027536955,0.0000618176,0.000008720934,0.00058940315],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999373,0.000005453469,0.0000037172936,0.000012150226,0.000024807934,0.000016644874],"domain_scores_gemma":[0.99988425,0.000044910244,0.000027660219,0.000017628916,0.00001050839,0.000015092652],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00009053808,0.00012904292,0.0001134725,0.00011170847,0.00012287899,0.0002220845,0.00015093928,0.000117217285,0.0006108761],"category_scores_gemma":[0.00015609246,0.00013713818,0.00011745102,0.0000693278,0.00022002427,0.00018290698,0.00017830786,0.00020201942,0.00015353605],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000049315186,0.000005966936,0.00022136001,0.00002569216,0.000004491426,0.00007468902,0.00003789115,0.000193765,0.99816006,0.00008671915,0.000022375487,0.0011176175],"study_design_scores_gemma":[0.0000036205695,0.000055172906,0.0017429215,0.0000016868778,0.0000031333839,0.00005830105,0.000020956277,0.00058851775,0.99684453,0.00003391252,0.0006449837,0.0000023577431],"about_ca_topic_score_codex":0.00024623427,"about_ca_topic_score_gemma":0.0004378189,"teacher_disagreement_score":0.0006108761,"about_ca_system_score_codex":0.00018112702,"about_ca_system_score_gemma":0.00008316777,"threshold_uncertainty_score":0.0020436049},"labels":[],"label_agreement":null},{"id":"W2052377861","doi":"10.1063/1.1993777","title":"Postdeposition thermal annealing and material stability of 75 °C hydrogenated nanocrystalline silicon plasma-enhanced chemical vapor deposition films","year":2005,"lang":"en","type":"article","venue":"Journal of Applied Physics","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":8,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Materials science; Annealing (glass); Chemical vapor deposition; Passivation; Analytical Chemistry (journal); Plasma-enhanced chemical vapor deposition; Nanocrystalline material; Amorphous solid; Silicon; Thin film; Thermal stability; Hydrogen; Silicon nitride; Amorphous silicon; Nanocrystalline silicon; Chemical engineering; Crystalline silicon; Composite material; Nanotechnology; Metallurgy; Chemistry; Crystallography; Layer (electronics)","score_opus":0.00624164898576786,"score_gpt":0.18498756909275682,"score_spread":0.17874592010698895,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2052377861","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9981185,0.0007105234,0.00050523045,0.000018358896,0.00001450618,0.000006098928,0.00014225248,0.000017363396,0.00046709762],"genre_scores_gemma":[0.9981704,0.00024944392,0.0007051393,0.000012734196,0.000004964263,0.000010196405,0.00021372014,0.0000141451055,0.0006191881],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999,0.00000494835,0.000007069201,0.00003266428,0.00003285063,0.000022510398],"domain_scores_gemma":[0.9998691,0.00003883997,0.000031695516,0.000016275966,0.00003372783,0.000010321114],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000095563155,0.00019028953,0.00018009788,0.00013709163,0.00017138319,0.0002149607,0.00019783153,0.00018793982,0.0008982119],"category_scores_gemma":[0.00022436996,0.00015023942,0.00015139434,0.00015367445,0.00013366666,0.00018392167,0.0000994567,0.0002579887,0.0001183045],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000041260657,0.0000044759126,0.0002468244,0.0000204303,0.000007003265,0.000025639807,0.00001742118,0.000053844124,0.99901915,0.000011876713,0.000010801799,0.00054126483],"study_design_scores_gemma":[0.0000028981906,0.00007248387,0.0059655514,0.0000020688192,0.000010193074,0.000033497297,0.00001996811,0.00028472487,0.9932963,0.0000042843226,0.00030532305,0.000002636644],"about_ca_topic_score_codex":0.0015255706,"about_ca_topic_score_gemma":0.0028812413,"teacher_disagreement_score":0.0015255706,"about_ca_system_score_codex":0.00029790532,"about_ca_system_score_gemma":0.0001473015,"threshold_uncertainty_score":0.0030333996},"labels":[],"label_agreement":null},{"id":"W2052661036","doi":"10.1063/1.1445476","title":"Optical transitions in hydrogenated amorphous silicon","year":2002,"lang":"en","type":"article","venue":"Applied Physics Letters","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":22,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Regina","funders":"","keywords":"Icon; Citation; Download; World Wide Web; Information retrieval; Computer science; Publishing; Search engine optimization; Filter (signal processing); The Internet; Art","score_opus":0.010114476669342874,"score_gpt":0.17074137142265344,"score_spread":0.16062689475331057,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2052661036","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9974337,0.0001553027,0.0010049503,0.000023194903,0.0000057218463,0.0000028496977,0.000018415507,0.000013026248,0.0013428043],"genre_scores_gemma":[0.9991443,0.00011596377,0.00038170128,0.000007912678,0.0000034066943,0.0000023678117,0.000024389483,0.0000035331673,0.00031635276],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999554,0.000005605275,0.0000018248895,0.000007952825,0.00001829177,0.000011007792],"domain_scores_gemma":[0.99987936,0.00006696707,0.000025721642,0.000008004507,0.0000124275375,0.000007474796],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00008514093,0.00015029487,0.000104415456,0.0002249779,0.0001787617,0.00029498778,0.00021360285,0.0001811868,0.00086694903],"category_scores_gemma":[0.00024861167,0.000107594504,0.00011069822,0.00021978798,0.0004387021,0.00028105002,0.00018187829,0.00021397669,0.0000839099],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00023915536,0.000096376076,0.0023184875,0.00012717179,0.000037623613,0.0008674173,0.0002721692,0.023095604,0.95021737,0.016417222,0.00021875836,0.0060927444],"study_design_scores_gemma":[0.000100754805,0.0005754918,0.011090123,0.00002690152,0.000047251073,0.00061504566,0.00040465448,0.27289283,0.7034156,0.008280651,0.0025052554,0.000045462322],"about_ca_topic_score_codex":0.00057149975,"about_ca_topic_score_gemma":0.000468233,"teacher_disagreement_score":0.00086694903,"about_ca_system_score_codex":0.00017552904,"about_ca_system_score_gemma":0.00008336588,"threshold_uncertainty_score":0.0029002428},"labels":[],"label_agreement":null},{"id":"W2052877072","doi":"10.1007/s10854-007-9422-2","title":"Optical properties of amorphous silicon nitride thin-films prepared by VHF-PECVD using silane and nitrogen","year":2007,"lang":"en","type":"article","venue":"Journal of Materials Science Materials in Electronics","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":11,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Saskatchewan","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Silane; Materials science; Silicon nitride; Plasma-enhanced chemical vapor deposition; Amorphous solid; Refractive index; Nitride; Thin film; Silicon; Amorphous silicon; Analytical Chemistry (journal); Optoelectronics; Crystalline silicon; Chemistry; Nanotechnology; Layer (electronics); Composite material; Crystallography; Organic chemistry","score_opus":0.010879744435047158,"score_gpt":0.2217484380642577,"score_spread":0.21086869362921054,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2052877072","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9974896,0.00030659328,0.00029789985,0.00002835988,0.000017021115,0.0000044936983,0.00018844582,0.00001837715,0.0016492743],"genre_scores_gemma":[0.9977774,0.00019504126,0.00039258425,0.000014635642,0.0000054089587,0.00000507196,0.00023351464,0.000008477264,0.0013679035],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999279,0.000004656439,0.0000040513487,0.000014320809,0.000027554004,0.00002154496],"domain_scores_gemma":[0.9998449,0.000060428538,0.00002457662,0.000014072108,0.00003667907,0.000019251082],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00011331776,0.00022012416,0.00016914298,0.00024326183,0.00022872508,0.00022430343,0.0002776924,0.00027681718,0.0022133137],"category_scores_gemma":[0.00023529977,0.00015647455,0.00013722845,0.0001641,0.00018660419,0.00020712927,0.000094625975,0.0002674734,0.00024638642],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00017518428,0.000024865614,0.00048505692,0.000044051674,0.000012414116,0.00008190216,0.000034572597,0.00024877652,0.9976724,0.00009190583,0.0001074027,0.0010215734],"study_design_scores_gemma":[0.000018363804,0.00017423557,0.009309189,0.000008669005,0.000017244733,0.00008575435,0.00006326713,0.002295967,0.9873487,0.000035651618,0.0006361243,0.0000067566966],"about_ca_topic_score_codex":0.0016335959,"about_ca_topic_score_gemma":0.0022020661,"teacher_disagreement_score":0.0022133137,"about_ca_system_score_codex":0.00022277483,"about_ca_system_score_gemma":0.00013021844,"threshold_uncertainty_score":0.007404208},"labels":[],"label_agreement":null},{"id":"W2053581169","doi":"10.1557/proc-609-a30.1","title":"Recombination in Tritiated Amorphous Silicon","year":2000,"lang":"en","type":"article","venue":"MRS Proceedings","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Ontario Power Generation; University of Toronto","funders":"","keywords":"Amorphous silicon; Materials science; Dangling bond; Diode; Silicon; Annealing (glass); Luminescence; Optoelectronics; Amorphous solid; Analytical Chemistry (journal); Crystalline silicon; Crystallography; Composite material; Chemistry","score_opus":0.0062530376439955924,"score_gpt":0.17961975915689363,"score_spread":0.17336672151289803,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2053581169","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.97590476,0.0024658337,0.004925327,0.00025112985,0.00013074298,0.000027340218,0.000109878456,0.00018416962,0.016000912],"genre_scores_gemma":[0.98790014,0.0004073104,0.0011112677,0.000051787705,0.00002699321,0.000014934288,0.0001385599,0.000052427753,0.010296647],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99987936,0.000023782302,0.0000046465248,0.000026981486,0.000032360065,0.00003289895],"domain_scores_gemma":[0.99979275,0.00012406279,0.000026070653,0.000025648187,0.000018299663,0.000013147746],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0003549395,0.0001502986,0.00037855652,0.00035004862,0.00046938754,0.00081503426,0.0006095504,0.00033347963,0.003763257],"category_scores_gemma":[0.00059693924,0.00015522655,0.00018690922,0.0003783902,0.00038819856,0.00048307094,0.00034823755,0.00052587397,0.0007401151],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0006752923,0.00009518267,0.0010007059,0.00029004933,0.000023319,0.00084007997,0.0007611703,0.0011031359,0.96621877,0.018790103,0.0013758789,0.008826247],"study_design_scores_gemma":[0.0000972825,0.00055291125,0.0015132043,0.000024209803,0.000039043156,0.00111148,0.00028165334,0.006468446,0.98043275,0.0014538321,0.008001481,0.000023769182],"about_ca_topic_score_codex":0.00058022025,"about_ca_topic_score_gemma":0.0005751602,"teacher_disagreement_score":0.003763257,"about_ca_system_score_codex":0.0006302563,"about_ca_system_score_gemma":0.00025235725,"threshold_uncertainty_score":0.012589335},"labels":[],"label_agreement":null},{"id":"W2054122668","doi":"10.1116/1.1650852","title":"Low-temperature Si growth on Si (001): Impurity incorporation and limiting thickness for epitaxy","year":2004,"lang":"en","type":"article","venue":"Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":19,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"National Research Council Canada; Institute for Microstructural Sciences","funders":"","keywords":"Impurity; Amorphous solid; Epitaxy; Materials science; Crystallinity; Molecular beam epitaxy; Raman scattering; Wafer; Analytical Chemistry (journal); Activation energy; Silicon; Raman spectroscopy; Crystallography; Chemistry; Nanotechnology; Optoelectronics; Optics; Physical chemistry; Composite material","score_opus":0.010056112008512672,"score_gpt":0.20674517941764123,"score_spread":0.19668906740912856,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2054122668","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9981212,0.00051851437,0.0005467823,0.000019437733,0.0000024966507,0.000004620069,0.00012813366,0.000018540526,0.0006402819],"genre_scores_gemma":[0.9977551,0.0003218704,0.0011981444,0.00000795668,0.000002239344,0.000006571393,0.00027661756,0.000012980299,0.00041850164],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99991274,0.000005838902,0.0000047117237,0.00002217818,0.000032488548,0.000021922764],"domain_scores_gemma":[0.9998863,0.00002818047,0.000037317037,0.000011064674,0.00002301537,0.000014172044],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000065001695,0.00021246616,0.00018138766,0.000169547,0.00015644873,0.00031069788,0.0002590157,0.00021284149,0.00080611894],"category_scores_gemma":[0.00018110906,0.00020637643,0.0001227723,0.00014701049,0.0001964949,0.00018251952,0.00012275673,0.00023928407,0.00016578092],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000037158523,0.000003821571,0.0006173165,0.000028064484,0.0000027034546,0.000036655874,0.000013462135,0.00010091741,0.9987753,0.000045305165,0.00001554691,0.00032379394],"study_design_scores_gemma":[0.000006060389,0.000089066445,0.014203206,0.0000053203203,0.000012697748,0.00014531333,0.00003000329,0.0018499393,0.9830499,0.000042223746,0.00056219567,0.0000039721695],"about_ca_topic_score_codex":0.0017529282,"about_ca_topic_score_gemma":0.0023590848,"teacher_disagreement_score":0.0017529282,"about_ca_system_score_codex":0.00035999512,"about_ca_system_score_gemma":0.00013242985,"threshold_uncertainty_score":0.0034854412},"labels":[],"label_agreement":null},{"id":"W2054415723","doi":"10.1109/jstqe.2004.824105","title":"Amorphous Silicon Back-Plane Electronics for OLED Displays","year":2004,"lang":"en","type":"article","venue":"IEEE Journal of Selected Topics in Quantum Electronics","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":36,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Active matrix; Optoelectronics; Thin-film transistor; Materials science; OLED; Current mirror; Transistor; Electronic circuit; Threshold voltage; Diode; Active layer; Electrical engineering; Voltage; Layer (electronics); Engineering; Nanotechnology","score_opus":0.00897122101439074,"score_gpt":0.21920351932418944,"score_spread":0.2102322983097987,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2054415723","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.19211097,0.15991724,0.3947602,0.004721899,0.002044329,0.00035525177,0.0021283834,0.0045052404,0.23945652],"genre_scores_gemma":[0.6119438,0.090587065,0.22597829,0.0010651231,0.0008683206,0.00012531911,0.0012684581,0.00027781076,0.06788583],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999356,0.0000065090962,0.0000038348876,0.000011805169,0.000035626064,0.0000066103134],"domain_scores_gemma":[0.9999441,0.000017431688,0.0000062500544,0.000009473623,0.000017217058,0.000005583327],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00010867637,0.00028125403,0.00016255294,0.00018128479,0.00027051193,0.00071032264,0.0002503767,0.00030685068,0.005667519],"category_scores_gemma":[0.00016690722,0.00013093975,0.00015413672,0.0002304408,0.00013123862,0.00043997858,0.00022271812,0.00043235137,0.002132908],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000063555664,0.0000389181,0.000658403,0.00070535357,0.000017055749,0.00037955216,0.00006845906,0.0021855533,0.7784769,0.033394285,0.006933679,0.17707826],"study_design_scores_gemma":[0.00002990461,0.0005132775,0.00258762,0.00023807237,0.00006413389,0.0019328097,0.00011014104,0.017642923,0.45621577,0.016731367,0.50389767,0.000036319445],"about_ca_topic_score_codex":0.0002628461,"about_ca_topic_score_gemma":0.00079434505,"teacher_disagreement_score":0.005667519,"about_ca_system_score_codex":0.00027434557,"about_ca_system_score_gemma":0.00019929235,"threshold_uncertainty_score":0.018959701},"labels":[],"label_agreement":null},{"id":"W2054635790","doi":"10.1109/jdt.2006.890711","title":"AMOLED Pixel Circuit With Electronic Compensation of Luminance Degradation","year":2007,"lang":"en","type":"article","venue":"Journal of Display Technology","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":58,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"AMOLED; OLED; Thin-film transistor; Materials science; Luminance; Optoelectronics; Threshold voltage; Active matrix; Degradation (telecommunications); Compensation (psychology); Diode; Amorphous silicon; Voltage; Pixel; Transistor; Electrical engineering; Silicon; Computer science; Crystalline silicon; Engineering; Nanotechnology; Artificial intelligence","score_opus":0.004835774886084499,"score_gpt":0.1956258856599506,"score_spread":0.1907901107738661,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2054635790","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.69867104,0.0019535609,0.2759845,0.0006317744,0.00071508565,0.00026153316,0.0007591574,0.009704989,0.011318259],"genre_scores_gemma":[0.9262323,0.0003150554,0.06525915,0.0004580363,0.00013184489,0.000111918256,0.00022614341,0.0001013645,0.0071641556],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99983275,0.000010423323,0.000009403379,0.00005315421,0.00006845957,0.00002576338],"domain_scores_gemma":[0.99984324,0.000046252888,0.000020397954,0.000024202733,0.00004951423,0.000016380043],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00009533979,0.00021547062,0.00027725272,0.00028106556,0.00024569582,0.00043375697,0.00093147403,0.00053163175,0.0033195599],"category_scores_gemma":[0.00024222268,0.0001345462,0.00018253726,0.00017339329,0.00016724704,0.0005344901,0.00023352585,0.00041481506,0.00044264257],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00021434076,0.000072745104,0.00044619164,0.00010634859,0.000027062735,0.00029325954,0.00004819911,0.00033874344,0.9569938,0.0012035646,0.0011029419,0.039152738],"study_design_scores_gemma":[0.00005489634,0.00038491268,0.0015188527,0.000011499153,0.000041361178,0.0009317757,0.000011177018,0.01181341,0.97715604,0.00028864696,0.0077663898,0.000021048543],"about_ca_topic_score_codex":0.000203015,"about_ca_topic_score_gemma":0.00030746008,"teacher_disagreement_score":0.0033195599,"about_ca_system_score_codex":0.0002670537,"about_ca_system_score_gemma":0.00016192209,"threshold_uncertainty_score":0.011105061},"labels":[],"label_agreement":null},{"id":"W2055077102","doi":"10.1049/el:20057573","title":"Analogue circuit building blocks with amorphous silicon thin film transistors","year":2005,"lang":"en","type":"article","venue":"Electronics Letters","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":19,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Thin-film transistor; Subtractor; Materials science; Amorphous silicon; Optoelectronics; Transistor; Electronic circuit; Silicon; Adder; Electrical engineering; Amorphous solid; Threshold voltage; Oxide thin-film transistor; Electronic engineering; Voltage; Engineering; Nanotechnology; Crystalline silicon; CMOS; Layer (electronics); Chemistry","score_opus":0.005534955332903968,"score_gpt":0.17430684405077126,"score_spread":0.1687718887178673,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2055077102","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.20393847,0.01858384,0.5546519,0.0015361886,0.0014776778,0.0005347045,0.0014288094,0.006709854,0.21113862],"genre_scores_gemma":[0.69592565,0.0077247047,0.25862858,0.000441025,0.00034531218,0.00028811934,0.0007343467,0.00023705862,0.03567518],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999268,0.000007864273,0.0000050863678,0.000012685209,0.00003705304,0.000010450075],"domain_scores_gemma":[0.9999238,0.000027659995,0.000008240241,0.000017561653,0.000014376431,0.00000829269],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000073704556,0.00033810028,0.00021355478,0.00029081057,0.00023114208,0.0007190453,0.0005268669,0.00034851072,0.009279614],"category_scores_gemma":[0.00026133205,0.00019688498,0.00025300507,0.0003270114,0.00020521694,0.0006120726,0.0002621066,0.0005849035,0.0022883846],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00024765858,0.00009691691,0.00031961102,0.000912044,0.00008445726,0.0009313598,0.0001250696,0.009754049,0.7177146,0.10784281,0.009183635,0.1527878],"study_design_scores_gemma":[0.00012944208,0.0007228677,0.0006316995,0.00014370272,0.00014790465,0.0012850632,0.000055681005,0.038671516,0.67775327,0.03703106,0.24337953,0.000048276805],"about_ca_topic_score_codex":0.00023681448,"about_ca_topic_score_gemma":0.00034981058,"teacher_disagreement_score":0.009279614,"about_ca_system_score_codex":0.00023037315,"about_ca_system_score_gemma":0.00012973606,"threshold_uncertainty_score":0.03104341},"labels":[],"label_agreement":null},{"id":"W2055304672","doi":"10.1049/ip-cds:20030554","title":"Thin film transistor integration on glass and plastic substrates in amorphous silicon technology","year":2003,"lang":"en","type":"article","venue":"IEE Proceedings - Circuits Devices and Systems","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":12,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Active matrix; Thin-film transistor; AMOLED; Amorphous silicon; Materials science; Transistor; Optoelectronics; OLED; Active layer; Pixel; Aperture (computer memory); Silicon; Detector; Oxide thin-film transistor; Flat panel display; Layer (electronics); Optics; Crystalline silicon; Nanotechnology; Electrical engineering; Engineering; Physics","score_opus":0.012861006731747403,"score_gpt":0.19719566245762063,"score_spread":0.18433465572587324,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2055304672","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.33536565,0.2328241,0.3393709,0.0018348795,0.0030648538,0.00024848434,0.00039030347,0.0019341046,0.084966764],"genre_scores_gemma":[0.61708134,0.15208335,0.17678441,0.0006636862,0.0010036972,0.0001244322,0.0004432197,0.00021475775,0.051601205],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999083,0.000008532053,0.000008015687,0.00001664328,0.000048102607,0.00001039428],"domain_scores_gemma":[0.9999449,0.000024399225,0.000008381077,0.000004475453,0.0000136669905,0.0000041025655],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000100844605,0.00028660204,0.000251636,0.00026168211,0.00018472379,0.00062244525,0.00038944365,0.0004129264,0.0010727042],"category_scores_gemma":[0.00017967251,0.000209371,0.00042151162,0.00034129046,0.00014518334,0.000723387,0.00015626774,0.00029301198,0.0006473896],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000076826436,0.000056778983,0.0007080226,0.00093903276,0.00009301488,0.0014312,0.00013587305,0.006642873,0.8080257,0.017606074,0.003193751,0.16109084],"study_design_scores_gemma":[0.00002610964,0.00086716516,0.0026731705,0.00027438905,0.00022708398,0.003611001,0.0001586144,0.03683423,0.7002553,0.009902823,0.24510768,0.00006247705],"about_ca_topic_score_codex":0.00046703723,"about_ca_topic_score_gemma":0.0009642439,"teacher_disagreement_score":0.0010727042,"about_ca_system_score_codex":0.00026847108,"about_ca_system_score_gemma":0.00016151376,"threshold_uncertainty_score":0.0035885572},"labels":[],"label_agreement":null},{"id":"W2055591714","doi":"10.1002/pssa.200881277","title":"Electronic structure of hydrogenated amorphous Si<sub>1–<i>x</i></sub>N<i><sub>x</sub></i> thin films using soft X‐ray emission and absorption measurements","year":2009,"lang":"en","type":"article","venue":"physica status solidi (a)","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Saskatchewan","funders":"Natural Sciences and Engineering Research Council of Canada; Canada Research Chairs","keywords":"Band gap; Materials science; Amorphous solid; Thin film; Analytical Chemistry (journal); Absorption edge; Absorption spectroscopy; Silicon; Silicon nitride; Crystallography; Optics; Optoelectronics; Nanotechnology; Chemistry; Physics","score_opus":0.010743030822825114,"score_gpt":0.20975963884684157,"score_spread":0.19901660802401644,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2055591714","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9983707,0.00019323763,0.00020137792,0.000013207776,0.000004511565,0.0000028359646,0.00021625517,0.000008975057,0.0009889153],"genre_scores_gemma":[0.99768054,0.00018072638,0.0003585231,0.000009911911,0.00000299781,0.0000059496965,0.0004723881,0.0000055501077,0.0012834081],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999665,0.0000025533084,0.0000014491706,0.0000087570115,0.000014448643,0.000006331981],"domain_scores_gemma":[0.9999423,0.000016927275,0.000011915972,0.000003965002,0.000017526238,0.0000073018023],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000044264943,0.00015360033,0.000121482684,0.00019349948,0.00021678225,0.00019401031,0.00026981055,0.00018338495,0.0014147513],"category_scores_gemma":[0.00008234547,0.00011032413,0.00006982308,0.0001546949,0.00019343807,0.00009733792,0.00006168795,0.00013064877,0.00017338735],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00012262865,0.000024582985,0.0014240376,0.00006492876,0.0000142221415,0.00018894332,0.00006687129,0.0007906014,0.99497616,0.00022392916,0.00021553283,0.0018875339],"study_design_scores_gemma":[0.000033694476,0.00059746596,0.06803464,0.000025443096,0.000045487395,0.00024971087,0.00030564942,0.013258991,0.9144343,0.00021322127,0.0027814098,0.000020012687],"about_ca_topic_score_codex":0.0016744313,"about_ca_topic_score_gemma":0.0017580071,"teacher_disagreement_score":0.0016744313,"about_ca_system_score_codex":0.00021106591,"about_ca_system_score_gemma":0.000072166615,"threshold_uncertainty_score":0.0047327876},"labels":[],"label_agreement":null},{"id":"W2055623213","doi":"10.1007/s10854-007-9184-x","title":"Metastable defect creation in tritiated hydrogenated amorphous silicon and the Staebler–Wronski effect","year":2007,"lang":"en","type":"article","venue":"Journal of Materials Science Materials in Electronics","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":3,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Toronto","funders":"Ontario Centres of Excellence","keywords":"Dangling bond; Amorphous silicon; Metastability; Materials science; Silicon; Band gap; Photocurrent; Isothermal process; Amorphous solid; Analytical Chemistry (journal); Crystallography; Chemistry; Crystalline silicon; Optoelectronics; Thermodynamics; Physics","score_opus":0.004074123362371829,"score_gpt":0.2195062513835207,"score_spread":0.21543212802114886,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2055623213","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9959015,0.00026760044,0.0015001723,0.00006557487,0.000033644363,0.000007670548,0.000038764705,0.00006320815,0.0021218641],"genre_scores_gemma":[0.99917334,0.0000415369,0.00020467318,0.000007934187,0.0000034458506,0.0000033818258,0.00001974112,0.000009227222,0.0005367664],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999362,0.0000067808237,0.0000039877386,0.000012766485,0.000020774783,0.000019590338],"domain_scores_gemma":[0.9998735,0.000056664536,0.000024198594,0.000022038494,0.000007711901,0.000015871672],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00015732326,0.0001223336,0.0002962106,0.0003129498,0.00030332542,0.00043702126,0.0005356598,0.00033698414,0.0020734959],"category_scores_gemma":[0.0002570243,0.00019520342,0.00018705256,0.00018528757,0.00056297734,0.00047672488,0.00034264263,0.000412672,0.00018782984],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00054380944,0.00012496968,0.0020791767,0.00017059957,0.000050057406,0.0011807291,0.00032983552,0.0037895276,0.94954336,0.035029188,0.0010097111,0.0061490717],"study_design_scores_gemma":[0.00016105537,0.00045457503,0.0070104324,0.000013553745,0.000044388413,0.0011811882,0.00025319206,0.0374648,0.9402811,0.010197721,0.0028734438,0.00006452141],"about_ca_topic_score_codex":0.00044382663,"about_ca_topic_score_gemma":0.00057561346,"teacher_disagreement_score":0.0020734959,"about_ca_system_score_codex":0.00025926897,"about_ca_system_score_gemma":0.00016240623,"threshold_uncertainty_score":0.00693655},"labels":[],"label_agreement":null},{"id":"W2055934725","doi":"10.1016/j.jnoncrysol.2005.11.092","title":"Modulated photoluminescence studies for lifetime determination in amorphous-silicon passivated crystalline-silicon wafers","year":2006,"lang":"en","type":"article","venue":"Journal of Non-Crystalline Solids","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":43,"is_retracted":false,"has_abstract":false,"route_ca_aff":false,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"","funders":"Bundesministerium für Bildung und Forschung; Institute of Gender and Health; Deutscher Akademischer Austauschdienst; Abertay University","keywords":"Photoluminescence; Wafer; Passivation; Materials science; Optoelectronics; Silicon; Carrier lifetime; Crystalline silicon; Amorphous silicon; Photoluminescence excitation; Amorphous solid; Nanotechnology; Chemistry; Crystallography","score_opus":0.01270237498142778,"score_gpt":0.25487551632022215,"score_spread":0.24217314133879436,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2055934725","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9961903,0.00074770575,0.002023884,0.00003153863,0.000009530343,0.000016159023,0.00017008194,0.00003333975,0.00077733974],"genre_scores_gemma":[0.99702376,0.0003315365,0.0015957793,0.00001884375,0.000004453081,0.000018472372,0.00016704042,0.000017610262,0.0008224245],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99986374,0.00001960641,0.000008716321,0.000040663028,0.000039072595,0.000028147577],"domain_scores_gemma":[0.9996358,0.00015468549,0.000055802084,0.00004887536,0.000086158114,0.000018685512],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0002385549,0.00023069448,0.00023762937,0.00024787794,0.00028688143,0.0003948618,0.00048216007,0.0003686979,0.0009936128],"category_scores_gemma":[0.0005056404,0.00023879566,0.00023954021,0.0002699716,0.00026423106,0.00032804746,0.00015453849,0.00039399526,0.0002480115],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00006951968,0.000011504199,0.00027499287,0.000029185605,0.0000066349835,0.00004107615,0.00004905582,0.000101405625,0.9985844,0.000088451765,0.000029561814,0.0007141461],"study_design_scores_gemma":[0.0000072956154,0.00013325604,0.0027381165,0.000004898133,0.0000096288995,0.000053303094,0.00005150001,0.0011252612,0.9954809,0.000026411695,0.0003652948,0.000004218096],"about_ca_topic_score_codex":0.0020190736,"about_ca_topic_score_gemma":0.0021449223,"teacher_disagreement_score":0.0020190736,"about_ca_system_score_codex":0.00055640115,"about_ca_system_score_gemma":0.00028921245,"threshold_uncertainty_score":0.004036963},"labels":[],"label_agreement":null},{"id":"W2057672192","doi":"10.1007/s10854-006-0026-z","title":"Raman scattering characterization of SF-PECVD-grown hydrogenated microcrystalline silicon thin films using growth surface electrical bias","year":2006,"lang":"en","type":"article","venue":"Journal of Materials Science Materials in Electronics","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":5,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Toronto","funders":"","keywords":"Plasma-enhanced chemical vapor deposition; Materials science; Microcrystalline; Raman scattering; Microcrystalline silicon; Thin film; Raman spectroscopy; Chemical vapor deposition; Optoelectronics; Analytical Chemistry (journal); Silicon; Optics; Nanotechnology; Chemistry; Crystallography; Crystalline silicon; Amorphous silicon","score_opus":0.011727718728841579,"score_gpt":0.21301057596205822,"score_spread":0.20128285723321665,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2057672192","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99688846,0.00025962875,0.0014231285,0.000055357275,0.000020727488,0.000008797302,0.00017267282,0.000038522117,0.0011327828],"genre_scores_gemma":[0.9963869,0.00020791411,0.0018256711,0.000018920964,0.000007439976,0.000009309918,0.00020966392,0.000015689444,0.0013183831],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998592,0.000009471672,0.000007595707,0.000031566487,0.00006448253,0.000027671715],"domain_scores_gemma":[0.99975675,0.000108678316,0.000029132083,0.000023912535,0.000065849,0.00001566027],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00017180073,0.00027187247,0.00023235097,0.00020352534,0.0002633784,0.00030251965,0.00036687238,0.00038127045,0.0012456902],"category_scores_gemma":[0.00032796772,0.00022947344,0.00018846201,0.00021922268,0.000217527,0.00025782225,0.00015643441,0.00026110394,0.00022971774],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00004927939,0.000006489028,0.00020965854,0.000016888884,0.000004611373,0.000030847787,0.000030613624,0.000069713606,0.9988739,0.00003142391,0.00002953214,0.00064698287],"study_design_scores_gemma":[0.0000041644917,0.000046440215,0.002312971,0.0000018716315,0.0000046688424,0.000039359846,0.000034233395,0.0009715876,0.99638236,0.000011197375,0.00018818567,0.0000029561775],"about_ca_topic_score_codex":0.002396625,"about_ca_topic_score_gemma":0.004376226,"teacher_disagreement_score":0.002396625,"about_ca_system_score_codex":0.0003202073,"about_ca_system_score_gemma":0.00021392977,"threshold_uncertainty_score":0.0047653913},"labels":[],"label_agreement":null},{"id":"W2058170999","doi":"10.1002/seup.200390002","title":"Large Area Digital X‐ray Imaging","year":2003,"lang":"en","type":"article","venue":"Sensors Update","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Fabrication; Materials science; Active matrix; Optoelectronics; Schottky diode; Image sensor; Transistor; Threshold voltage; Leakage (economics); Parasitic extraction; Thin-film transistor; Nanotechnology; Electrical engineering; Diode; Voltage; Computer science; Engineering; Artificial intelligence","score_opus":0.005420732527268358,"score_gpt":0.17987922098664164,"score_spread":0.17445848845937328,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2058170999","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.07823217,0.16241744,0.38532233,0.0044249645,0.0021736207,0.00046174205,0.0040395716,0.01613575,0.3467925],"genre_scores_gemma":[0.38917348,0.06995531,0.29470485,0.0024122857,0.0007242619,0.0002821094,0.0033431232,0.00064705586,0.23875758],"study_design_codex":"design_other","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.999908,0.000007175708,0.00000416484,0.000017553808,0.00005417152,0.000008977491],"domain_scores_gemma":[0.9999025,0.000032601994,0.000010710034,0.000015434234,0.00002961741,0.000009152089],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00016133937,0.0002946238,0.00021011978,0.00049763947,0.00018727493,0.0006980058,0.00041844553,0.00029604768,0.021571415],"category_scores_gemma":[0.00022470542,0.00016300367,0.00014397787,0.00036375597,0.00012110806,0.0006228666,0.0003033558,0.00032276558,0.0053860107],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00023747243,0.00005359959,0.0013398543,0.00086596847,0.000042544518,0.00075622974,0.00011768862,0.0009584178,0.35685164,0.010400456,0.05189345,0.5764828],"study_design_scores_gemma":[0.000038481274,0.00013861472,0.0037321008,0.00015226258,0.00005692421,0.0048382077,0.000068915164,0.007909908,0.22915363,0.0022078906,0.7516686,0.00003454917],"about_ca_topic_score_codex":0.0002702554,"about_ca_topic_score_gemma":0.0005710225,"teacher_disagreement_score":0.021571415,"about_ca_system_score_codex":0.00024082212,"about_ca_system_score_gemma":0.00014072158,"threshold_uncertainty_score":0.07216364},"labels":[],"label_agreement":null},{"id":"W2058342878","doi":"10.1063/1.3276288","title":"Blue-enhanced thin-film photodiode for dual-screen x-ray imaging","year":2009,"lang":"en","type":"article","venue":"Applied Physics Letters","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":6,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Photodiode; Quantum efficiency; Optoelectronics; Materials science; Dark current; Doping; X-ray detector; Nanocrystalline material; Silicon; Wavelength; Optics; Photodetector; Detector; Physics; Nanotechnology","score_opus":0.0074984677266402965,"score_gpt":0.20037120215372167,"score_spread":0.1928727344270814,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2058342878","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.6640108,0.01262073,0.3038057,0.0005611325,0.0005292862,0.00034432407,0.0012870152,0.0021543277,0.014686567],"genre_scores_gemma":[0.7340576,0.003780098,0.24703562,0.00023495282,0.000089095745,0.00013562293,0.00044160226,0.00009327141,0.014132],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99977213,0.000031761945,0.000012593586,0.00005569878,0.00010964723,0.000018081848],"domain_scores_gemma":[0.9997131,0.000118197146,0.000035334953,0.000033329594,0.000075638956,0.000024421617],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000341095,0.00045924637,0.00039140208,0.00040709184,0.00019526764,0.0005913348,0.0010342046,0.00068673835,0.0019541003],"category_scores_gemma":[0.00034976722,0.00034519215,0.0002816133,0.00027594052,0.00020986148,0.0006001084,0.00031004392,0.00053226156,0.00092353125],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000050890794,0.000017566534,0.00026023536,0.0000866429,0.000017263277,0.000095763105,0.000015372605,0.00010222132,0.99254686,0.0002284093,0.00035696817,0.0062217982],"study_design_scores_gemma":[0.000016715447,0.0001430597,0.00078557146,0.000009875592,0.000029819714,0.0006612333,0.000016399177,0.0031138952,0.99081355,0.00006544774,0.00433004,0.0000142853905],"about_ca_topic_score_codex":0.00023650916,"about_ca_topic_score_gemma":0.0009924453,"teacher_disagreement_score":0.0019541003,"about_ca_system_score_codex":0.00043691898,"about_ca_system_score_gemma":0.00020493811,"threshold_uncertainty_score":0.0065371394},"labels":[],"label_agreement":null},{"id":"W2059548502","doi":"10.1116/1.2155532","title":"Near-unity ideality factor diodes using nanocrystalline Si/multicrystalline Si heterojunctions for photovoltaic application","year":2006,"lang":"en","type":"article","venue":"Journal of Vacuum Science & Technology A Vacuum Surfaces and Films","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":4,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Materials science; Nanocrystalline material; Passivation; Heterojunction; Optoelectronics; Diode; Photovoltaic system; Quantum efficiency; Silicon; Nanotechnology; Electrical engineering; Layer (electronics)","score_opus":0.014197067109408311,"score_gpt":0.24649250436214876,"score_spread":0.23229543725274043,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2059548502","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9714239,0.0017014493,0.022712328,0.000113809794,0.000074353826,0.000048621725,0.00022323779,0.00022684757,0.0034754314],"genre_scores_gemma":[0.9762783,0.0009345881,0.020369465,0.000037827143,0.00001773349,0.000031256674,0.00019430871,0.00003811947,0.002098313],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998535,0.0000087902,0.000009945083,0.00003394761,0.00006717115,0.000026656435],"domain_scores_gemma":[0.9998461,0.00004081667,0.00002712993,0.000024353276,0.000043765885,0.000017768096],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00019672418,0.00023377065,0.0003624354,0.00015354512,0.00015420301,0.0003854559,0.000386673,0.00027612236,0.00092664704],"category_scores_gemma":[0.0002540527,0.00019675982,0.00021284554,0.0002580689,0.00017542046,0.0004667166,0.00016892393,0.00031959396,0.00028082746],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000019166146,0.000007611351,0.00015830164,0.000021780086,0.0000050071267,0.000029993009,0.00001108748,0.00018306413,0.997962,0.00025336075,0.0000646942,0.0012839386],"study_design_scores_gemma":[0.000022165392,0.00018831207,0.0019234126,0.0000057457546,0.00001832048,0.00038551763,0.000019671132,0.003998044,0.9908806,0.00024440425,0.0023063303,0.00000739295],"about_ca_topic_score_codex":0.00056405476,"about_ca_topic_score_gemma":0.0019246276,"teacher_disagreement_score":0.00092664704,"about_ca_system_score_codex":0.00049187185,"about_ca_system_score_gemma":0.00024483338,"threshold_uncertainty_score":0.003568828},"labels":[],"label_agreement":null},{"id":"W2059596101","doi":"10.1063/1.1949721","title":"Amorphous silicon thin-film transistors with 90° vertical nanoscale channel","year":2005,"lang":"en","type":"article","venue":"Applied Physics Letters","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":20,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Thin-film transistor; Materials science; Transistor; Optoelectronics; Amorphous silicon; Subthreshold slope; Wafer; Silicon; Amorphous solid; Threshold voltage; Etching (microfabrication); Oxide thin-film transistor; Dielectric; Thin film; Channel (broadcasting); Electrical engineering; Voltage; Nanotechnology; Crystalline silicon; Layer (electronics); Crystallography; Chemistry; Engineering","score_opus":0.006687731769086455,"score_gpt":0.1708207320392941,"score_spread":0.16413300027020764,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2059596101","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.986661,0.00104654,0.0067330063,0.00007392017,0.000069073096,0.000019539228,0.00020119741,0.00017199827,0.0050235842],"genre_scores_gemma":[0.9909044,0.0007390386,0.006371981,0.000034118573,0.000023980569,0.000013405469,0.0001567752,0.000010993374,0.00174531],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999318,0.0000033426547,0.000005278189,0.000012120971,0.00003457692,0.000012904971],"domain_scores_gemma":[0.99993324,0.000018330253,0.000016289276,0.0000095716805,0.000012303416,0.000010189798],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00005946737,0.0001311258,0.00009001167,0.00008336127,0.00011229533,0.00031858854,0.00023821645,0.00017444916,0.0005424067],"category_scores_gemma":[0.00012897994,0.000118630625,0.000102762504,0.00012989575,0.00013848353,0.00022628007,0.000121015226,0.00017215527,0.0002127447],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000021947892,0.000009193656,0.00037680572,0.000026184372,0.000005576299,0.00008595938,0.000014292584,0.0002722639,0.99600226,0.00076186424,0.00011314762,0.002310516],"study_design_scores_gemma":[0.000027569326,0.00019821596,0.0021744536,0.0000063293687,0.000025697682,0.00038963664,0.000028384611,0.0062557724,0.9850404,0.000418931,0.005425757,0.000008825949],"about_ca_topic_score_codex":0.00054554513,"about_ca_topic_score_gemma":0.0014230927,"teacher_disagreement_score":0.00054554513,"about_ca_system_score_codex":0.00017643263,"about_ca_system_score_gemma":0.00013036691,"threshold_uncertainty_score":0.0018145442},"labels":[],"label_agreement":null},{"id":"W2059613152","doi":"10.1063/1.2783971","title":"Absence of defect state creation in nanocrystalline silicon thin film transistors deduced from constant current stress measurements","year":2007,"lang":"en","type":"article","venue":"Applied Physics Letters","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":26,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Materials science; Thin-film transistor; Nanocrystalline material; Silicon; Nanocrystalline silicon; Amorphous solid; Condensed matter physics; Amorphous silicon; Thermalisation; Transistor; Time constant; Current (fluid); Stress (linguistics); Trapping; Threshold voltage; Voltage; Optoelectronics; Crystallography; Nanotechnology; Atomic physics; Electrical engineering; Crystalline silicon; Chemistry; Thermodynamics; Physics","score_opus":0.017271248395512806,"score_gpt":0.22257589306183964,"score_spread":0.20530464466632684,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2059613152","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9963659,0.00079700246,0.0021520383,0.000041183972,0.000019171222,0.000010018553,0.00018868412,0.000041827978,0.00038419824],"genre_scores_gemma":[0.9985299,0.00024647944,0.0009253082,0.000011616904,0.000006002828,0.0000071212708,0.0000738089,0.0000068569225,0.00019288287],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998677,0.000004311511,0.000013843518,0.00004453125,0.000052377993,0.000017355102],"domain_scores_gemma":[0.9993668,0.0002763424,0.00015423339,0.00005696544,0.00011673232,0.000028822904],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00013868822,0.00020195548,0.0002147151,0.00028086625,0.00010810408,0.00021547946,0.0002966133,0.00025810755,0.00062099996],"category_scores_gemma":[0.00054712273,0.00012696335,0.0001421415,0.00024397075,0.00025973658,0.00025802388,0.0001080879,0.00032447948,0.00009161037],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00007930134,0.000010501437,0.0014207524,0.000050256614,0.000007006088,0.00010977137,0.000059791666,0.00021923445,0.9957903,0.000050975064,0.000020921043,0.0021812778],"study_design_scores_gemma":[0.00000522691,0.00018723382,0.012474907,0.00000579285,0.000018833527,0.00024341723,0.00004828888,0.0032561133,0.9834056,0.000084247346,0.00026238177,0.000007866084],"about_ca_topic_score_codex":0.0010510775,"about_ca_topic_score_gemma":0.0012745338,"teacher_disagreement_score":0.0010510775,"about_ca_system_score_codex":0.0003151168,"about_ca_system_score_gemma":0.00009480878,"threshold_uncertainty_score":0.002286315},"labels":[],"label_agreement":null},{"id":"W2060174242","doi":"10.1109/pvsc.2014.6925019","title":"Correlation of dynamical, vibrational and optical properties in c-Si with bond-centered-hydrogen and other hydrogen complexes","year":2014,"lang":"en","type":"article","venue":"","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Ontario Tech University","funders":"","keywords":"Dimer; Metastability; Hydrogen bond; Hydrogen; Materials science; Dielectric; Physical chemistry; Physics; Crystallography; Topology (electrical circuits); Chemistry; Computational chemistry; Optoelectronics; Nuclear magnetic resonance; Molecule; Quantum mechanics","score_opus":0.011283042415240379,"score_gpt":0.18512966438782516,"score_spread":0.17384662197258477,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2060174242","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99811685,0.00012875402,0.00080591725,0.000016704113,0.0000034685397,0.000004697716,0.00015089879,0.000024964056,0.0007478205],"genre_scores_gemma":[0.9991412,0.0000449595,0.00027116068,0.000004418164,0.0000025047784,0.000004290366,0.0002899341,0.000006596979,0.00023482738],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999621,0.00000377508,0.0000011598653,0.000013758927,0.0000103303855,0.00000878647],"domain_scores_gemma":[0.9998456,0.000063369815,0.000034112043,0.0000149251055,0.000024847519,0.000017208748],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00008660281,0.0001521328,0.000094513794,0.0002502006,0.00016438613,0.00017951275,0.00017879,0.00018212385,0.0014517833],"category_scores_gemma":[0.0003585231,0.00008689283,0.00012018827,0.00021554745,0.00026835513,0.00026630086,0.00011886513,0.0002476162,0.00015394592],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00079718186,0.00043504135,0.085744195,0.00018695448,0.00018980932,0.00031338588,0.00043168094,0.03234653,0.8597386,0.0036316928,0.001646149,0.014538809],"study_design_scores_gemma":[0.000059099937,0.00063393463,0.18873271,0.000009822149,0.000051391402,0.0002896842,0.0002235481,0.335469,0.4706663,0.001560586,0.00222761,0.00007633483],"about_ca_topic_score_codex":0.001237302,"about_ca_topic_score_gemma":0.000839162,"teacher_disagreement_score":0.0014517833,"about_ca_system_score_codex":0.00018218081,"about_ca_system_score_gemma":0.00007150713,"threshold_uncertainty_score":0.0048567057},"labels":[],"label_agreement":null},{"id":"W2060180927","doi":"10.1016/j.jnoncrysol.2003.12.042","title":"Deviations from square-root distributions of electronic states in hydrogenated amorphous silicon and their impact upon the resultant optical properties","year":2004,"lang":"en","type":"article","venue":"Journal of Non-Crystalline Solids","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":17,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Regina","funders":"Natural Sciences and Engineering Research Council of Canada; CMC Microsystems","keywords":"Amorphous silicon; Square root; Materials science; Silicon; Amorphous solid; Square (algebra); Root mean square; Root (linguistics); Optoelectronics; Crystallography; Physics; Mathematics; Crystalline silicon; Quantum mechanics; Chemistry; Geometry","score_opus":0.007603909476209749,"score_gpt":0.21584225441554983,"score_spread":0.20823834493934007,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2060180927","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9926853,0.00010003811,0.005308634,0.00010812368,0.000008088947,0.000004651621,0.000093654395,0.000097855394,0.0015935943],"genre_scores_gemma":[0.9991185,0.000030334417,0.00052041037,0.000010762913,0.0000018000326,0.0000034109137,0.00009197912,0.000018983335,0.00020375483],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99979836,0.00005038417,0.000010557793,0.000043101616,0.00006176542,0.000035888017],"domain_scores_gemma":[0.9978695,0.0015432077,0.00014376773,0.00020241232,0.00017111962,0.00006985603],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00091886485,0.00017236469,0.00021113154,0.0005181464,0.0003285852,0.00061284454,0.00046688766,0.0003637837,0.002392795],"category_scores_gemma":[0.002817102,0.00024314683,0.0001672247,0.0004799142,0.0007937438,0.00068893627,0.0003720194,0.0006354525,0.00022968883],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0029049118,0.0006121912,0.062047288,0.0002809632,0.00024473885,0.0012438647,0.0009935313,0.31402647,0.49341607,0.08305131,0.0019104667,0.03926823],"study_design_scores_gemma":[0.000074103395,0.00041174205,0.047758155,0.00002250133,0.000043260294,0.00042540955,0.0005363242,0.7384436,0.18555321,0.026036311,0.0005956831,0.00009966681],"about_ca_topic_score_codex":0.0005410538,"about_ca_topic_score_gemma":0.00091423205,"teacher_disagreement_score":0.002392795,"about_ca_system_score_codex":0.00039055024,"about_ca_system_score_gemma":0.00020182671,"threshold_uncertainty_score":0.008004725},"labels":[],"label_agreement":null},{"id":"W2061377096","doi":"10.1007/s10854-006-0025-0","title":"Physical, electrical, and optical properties of SF-PECVD-grown hydrogenated microcrystalline silicon with growth surface electrical bias","year":2006,"lang":"en","type":"article","venue":"Journal of Materials Science Materials in Electronics","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":3,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Toronto","funders":"","keywords":"Plasma-enhanced chemical vapor deposition; Microcrystalline; Materials science; Microcrystalline silicon; Silicon; Photoluminescence; Thin film; Optoelectronics; Analytical Chemistry (journal); Nanotechnology; Chemistry; Crystalline silicon; Crystallography; Amorphous silicon","score_opus":0.009159703262651028,"score_gpt":0.19520535443708956,"score_spread":0.18604565117443853,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2061377096","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99882203,0.00017736758,0.00013355086,0.000029351113,0.000010146027,0.0000024288886,0.00023916794,0.000016714257,0.00056930096],"genre_scores_gemma":[0.9989104,0.00008033859,0.00013848156,0.0000079061265,0.000004550927,0.000002715011,0.00022745815,0.000005395872,0.0006227496],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99989617,0.000006799253,0.0000051285974,0.00002642932,0.000039122555,0.000026377977],"domain_scores_gemma":[0.9996549,0.00015571134,0.00005356571,0.000037048972,0.00007223614,0.000026627717],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00012958758,0.000153021,0.00018315515,0.00018701832,0.00018744213,0.00023572684,0.00033862705,0.00034018068,0.0023380648],"category_scores_gemma":[0.0004655083,0.00014559203,0.00014061548,0.00033374457,0.00028571484,0.00025430982,0.00009922641,0.00023590155,0.00018064375],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000606222,0.000045268273,0.0025634216,0.00006834804,0.000034821078,0.0002832353,0.00010895934,0.0011277836,0.99191225,0.00022408192,0.00042062468,0.0026049248],"study_design_scores_gemma":[0.000039522365,0.0004562428,0.031032551,0.000010729843,0.000028726545,0.0001644604,0.00016106857,0.008143489,0.95893073,0.00008766154,0.00092898915,0.000015840344],"about_ca_topic_score_codex":0.0031263682,"about_ca_topic_score_gemma":0.003239013,"teacher_disagreement_score":0.0031263682,"about_ca_system_score_codex":0.00037574724,"about_ca_system_score_gemma":0.00018051393,"threshold_uncertainty_score":0.00782156},"labels":[],"label_agreement":null},{"id":"W2061746260","doi":"10.1109/jssc.2004.829373","title":"Amorphous silicon thin film transistor circuit integration for organic LED displays on glass and plastic","year":2004,"lang":"en","type":"article","venue":"IEEE Journal of Solid-State Circuits","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":249,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"AMOLED; Thin-film transistor; Active matrix; Materials science; Optoelectronics; Current mirror; Electronic circuit; OLED; Transistor; Threshold voltage; Active layer; Amorphous silicon; Electrical engineering; Voltage; Silicon; Layer (electronics); Engineering; Crystalline silicon; Nanotechnology","score_opus":0.01467293782373649,"score_gpt":0.22161163419709157,"score_spread":0.20693869637335507,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2061746260","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9273892,0.0017082504,0.057338443,0.00022901516,0.00013927084,0.00015029914,0.00036317718,0.0014180366,0.011264296],"genre_scores_gemma":[0.9518061,0.00068111665,0.043264277,0.000085675645,0.000038525668,0.000054572927,0.00022765061,0.000065645836,0.0037763203],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99990237,0.0000074567333,0.00000518661,0.000019253435,0.000049141698,0.000016500706],"domain_scores_gemma":[0.9999074,0.000025748257,0.000021524842,0.000013477895,0.000021815573,0.000009989364],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00007748149,0.00019530767,0.00010839342,0.00020977545,0.00020064054,0.00040416236,0.00047495752,0.00019696893,0.0021841335],"category_scores_gemma":[0.00019172978,0.00010706843,0.0001936056,0.00019549808,0.00008507608,0.0003316743,0.00014493118,0.00018318606,0.00032333352],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000054342676,0.000029791958,0.00088711735,0.00007846359,0.000020012021,0.00017193635,0.000021682794,0.0005544819,0.9787255,0.0006866673,0.00030094635,0.01846894],"study_design_scores_gemma":[0.000020852358,0.00065528695,0.0058690384,0.000014222028,0.000054138618,0.000637443,0.00004440243,0.010529357,0.97168994,0.00028809084,0.010183125,0.000014124801],"about_ca_topic_score_codex":0.0006325904,"about_ca_topic_score_gemma":0.0020893328,"teacher_disagreement_score":0.0021841335,"about_ca_system_score_codex":0.00029161156,"about_ca_system_score_gemma":0.00021227663,"threshold_uncertainty_score":0.0073066354},"labels":[],"label_agreement":null},{"id":"W2062789539","doi":"10.1021/ja0456149","title":"Indolo[3,2-<i>b</i>]carbazole-Based Thin-Film Transistors with High Mobility and Stability","year":2004,"lang":"en","type":"article","venue":"Journal of the American Chemical Society","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":347,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Xerox (Canada)","funders":"","keywords":"Chemistry; Carbazole; Thin-film transistor; Stability (learning theory); Optoelectronics; Organic chemistry","score_opus":0.006835653114512078,"score_gpt":0.1896652810089157,"score_spread":0.1828296278944036,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2062789539","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.97326374,0.0029660368,0.016915383,0.00018371797,0.000082771396,0.00006157498,0.00031976975,0.0004372143,0.0057697403],"genre_scores_gemma":[0.97667515,0.0013515656,0.016759243,0.00009507515,0.000025023617,0.00005696351,0.00032307996,0.000030575222,0.0046832943],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999517,0.0000035253688,0.0000025170755,0.000009978533,0.000017980126,0.000014327106],"domain_scores_gemma":[0.999948,0.000009762312,0.000014151984,0.0000040022637,0.000015574282,0.00000836985],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000057688445,0.00018566196,0.000112218695,0.00014405821,0.00011051787,0.0002498247,0.00044569845,0.00028635323,0.00066814624],"category_scores_gemma":[0.00014674368,0.000116288684,0.0001062665,0.00016614363,0.00014330441,0.00025719788,0.00009122106,0.00029159235,0.00034308454],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0000108342865,0.000005651498,0.00004560491,0.000012826339,0.0000012789969,0.000023800165,0.000004458207,0.00002544692,0.9985751,0.00007885844,0.00004937184,0.001166813],"study_design_scores_gemma":[0.000016220745,0.0001048308,0.0019178315,0.0000034141358,0.000010789222,0.0002640042,0.000007840109,0.0018621645,0.99313366,0.000044879784,0.0026291262,0.0000051345396],"about_ca_topic_score_codex":0.0008187176,"about_ca_topic_score_gemma":0.0030892044,"teacher_disagreement_score":0.0008187176,"about_ca_system_score_codex":0.00026551393,"about_ca_system_score_gemma":0.00012833708,"threshold_uncertainty_score":0.0022351742},"labels":[],"label_agreement":null},{"id":"W2063320852","doi":"10.1557/opl.2012.1244","title":"The Stress and Microstructure analysis of Polycrystalline Silicon Films Deposited by LPCVD","year":2012,"lang":"en","type":"article","venue":"MRS Proceedings","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":4,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Simon Fraser University","funders":"","keywords":"Materials science; Residual stress; Chemical vapor deposition; Composite material; Microstructure; Surface roughness; Nanocrystalline silicon; Grain size; Silicon; Analytical Chemistry (journal); Metallurgy; Amorphous silicon; Crystalline silicon; Nanotechnology; Layer (electronics)","score_opus":0.0036256532751446978,"score_gpt":0.18371789859183532,"score_spread":0.18009224531669063,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2063320852","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9965855,0.00034380768,0.00104641,0.000040809853,0.00001574331,0.000012626108,0.0005403819,0.00002490962,0.0013897571],"genre_scores_gemma":[0.9966779,0.00020034074,0.0012293279,0.00001660556,0.000008265329,0.000017077458,0.0003892658,0.000009847198,0.0014513121],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999243,0.0000023466362,0.000004226818,0.000017081382,0.000038443228,0.0000135314685],"domain_scores_gemma":[0.99987006,0.000019717841,0.000029596291,0.000013902664,0.0000562067,0.000010539657],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00007636447,0.00012373722,0.00014722343,0.00025736887,0.00029538345,0.00026466747,0.00021179425,0.00024905388,0.0015432597],"category_scores_gemma":[0.00018096251,0.00017988868,0.00013001038,0.0003312559,0.00021269907,0.00017893189,0.00010010438,0.00023095925,0.00012178169],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000028237244,0.0000090371195,0.00095770427,0.000022871798,0.0000058016003,0.00005304794,0.000036079153,0.0001352013,0.9975484,0.00004942283,0.00005738323,0.0010968512],"study_design_scores_gemma":[0.000016413891,0.0002825574,0.16187435,0.000011493975,0.00002109707,0.00021099295,0.00020473555,0.0033209901,0.8322661,0.00006926883,0.0017100073,0.000012016461],"about_ca_topic_score_codex":0.00616872,"about_ca_topic_score_gemma":0.0114754485,"teacher_disagreement_score":0.00616872,"about_ca_system_score_codex":0.00035302405,"about_ca_system_score_gemma":0.0002670346,"threshold_uncertainty_score":0.012265623},"labels":[],"label_agreement":null},{"id":"W2064276158","doi":"10.1063/1.2825422","title":"Stable indium oxide thin-film transistors with fast threshold voltage recovery","year":2007,"lang":"en","type":"article","venue":"Applied Physics Letters","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":115,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Thin-film transistor; Materials science; Threshold voltage; Optoelectronics; Gate dielectric; Gate oxide; Annealing (glass); Oxide; Transistor; Subthreshold slope; Indium; Dielectric; Subthreshold conduction; Trapping; Voltage; Nanotechnology; Electrical engineering; Layer (electronics)","score_opus":0.006927715670290057,"score_gpt":0.17448886043968734,"score_spread":0.1675611447693973,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2064276158","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.98000026,0.0014891631,0.015954008,0.00014647635,0.00007865889,0.000044120112,0.00036285844,0.0003168648,0.001607646],"genre_scores_gemma":[0.9871689,0.00053554267,0.010241981,0.00003825492,0.000020458014,0.000027868227,0.00024828876,0.000042184038,0.001676484],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99984777,0.000012343968,0.000014472066,0.000023314547,0.00007072497,0.00003145428],"domain_scores_gemma":[0.9997414,0.000054337153,0.000057306865,0.000044980887,0.000071505274,0.000030470559],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00020865894,0.00025288737,0.0002690876,0.00018175173,0.00018793177,0.0003610322,0.00039863543,0.0003328409,0.000598233],"category_scores_gemma":[0.00054993056,0.00020971886,0.00018639631,0.00022134274,0.00025885255,0.00038773296,0.00014791278,0.00029878112,0.00027058052],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000027957845,0.0000063623024,0.000179031,0.0000139713875,0.000004139591,0.00006105373,0.00001598211,0.00008682658,0.9980147,0.00012022577,0.00005515682,0.0014145842],"study_design_scores_gemma":[0.000023087781,0.0001265307,0.0011502274,0.0000022447348,0.000019587227,0.00026522516,0.000009539399,0.0021278549,0.9952644,0.000102074126,0.0009039951,0.0000052099745],"about_ca_topic_score_codex":0.00060873956,"about_ca_topic_score_gemma":0.0013222282,"teacher_disagreement_score":0.00060873956,"about_ca_system_score_codex":0.00027413797,"about_ca_system_score_gemma":0.00022784053,"threshold_uncertainty_score":0.002001226},"labels":[],"label_agreement":null},{"id":"W2064811492","doi":"10.1557/proc-664-a14.3","title":"Illumination- and Annealing-Induced Changes in the Infrared and Raman Spectra of a-Si:H","year":2001,"lang":"en","type":"article","venue":"MRS Proceedings","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":4,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Polytechnique Montréal","funders":"Université de Montréal","keywords":"Raman spectroscopy; Materials science; Annealing (glass); Infrared; Analytical Chemistry (journal); Infrared spectroscopy; Phonon; Optics; Chemistry; Condensed matter physics; Composite material","score_opus":0.012947680016095689,"score_gpt":0.20593742392731806,"score_spread":0.19298974391122237,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2064811492","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9950944,0.0003177476,0.000980362,0.00008155306,0.000027854117,0.000009140606,0.00023491839,0.000053654487,0.00320039],"genre_scores_gemma":[0.99589854,0.00012658657,0.00060857733,0.00005099767,0.0000067396486,0.000010484366,0.0002518315,0.000032776723,0.0030134807],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99989665,0.000010705038,0.0000036944286,0.000021712514,0.000026500153,0.000040812425],"domain_scores_gemma":[0.9998258,0.00007513199,0.000024352734,0.00001652158,0.00003601992,0.000022269203],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00011903528,0.00017863764,0.000112868285,0.00013861379,0.00023430845,0.0002509522,0.00024739464,0.0003675186,0.0040142797],"category_scores_gemma":[0.0002707031,0.00018286408,0.00014927296,0.00015840118,0.0003636733,0.00021444543,0.00013502392,0.00042222443,0.000534674],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00023385446,0.000021752807,0.00018369107,0.00002014853,0.0000065996765,0.000033889173,0.000037656166,0.000054379452,0.998298,0.00007217772,0.0001221268,0.00091588695],"study_design_scores_gemma":[0.000009515632,0.0000590525,0.005851433,0.0000016597971,0.000005207974,0.000038196817,0.00004356788,0.0003652963,0.99324787,0.000021195254,0.00035183408,0.000005230033],"about_ca_topic_score_codex":0.0016506716,"about_ca_topic_score_gemma":0.0024167255,"teacher_disagreement_score":0.0040142797,"about_ca_system_score_codex":0.0002781927,"about_ca_system_score_gemma":0.0001709598,"threshold_uncertainty_score":0.013429105},"labels":[],"label_agreement":null},{"id":"W2065570106","doi":"10.1016/j.nimb.2011.01.111","title":"Ion beam assisted crystallization of amorphous silicon layers using high current density Gallium beams","year":2011,"lang":"en","type":"article","venue":"Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":6,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Fibics (Canada)","funders":"Engineering and Physical Sciences Research Council","keywords":"Crystallization; Materials science; Amorphous solid; Ion beam; Gallium; Focused ion beam; Silicon; Ion; Ion beam deposition; Beam (structure); Beamline; Analytical Chemistry (journal); Optoelectronics; Crystallography; Chemical engineering; Optics; Chemistry; Metallurgy","score_opus":0.07929180008100872,"score_gpt":0.35890680416498183,"score_spread":0.2796150040839731,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2065570106","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9954501,0.0003613237,0.0012906273,0.00007118225,0.000026998337,0.000020476042,0.00018147248,0.00008871751,0.0025090475],"genre_scores_gemma":[0.99573475,0.0002890316,0.0022266947,0.0000136338695,0.0000065532786,0.000011767913,0.00010611788,0.00005360127,0.0015577856],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998734,0.000012301952,0.00001159616,0.000024400088,0.00004117819,0.00003722766],"domain_scores_gemma":[0.999879,0.000040070227,0.000022937962,0.000023617346,0.000019638206,0.000014789706],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00018410923,0.00027200676,0.00040295205,0.0002117339,0.0003897207,0.0005699356,0.0003130659,0.0002730979,0.00089308777],"category_scores_gemma":[0.00024761245,0.0002672437,0.00021102488,0.0003289488,0.00031995372,0.0003444461,0.00041123354,0.00036508936,0.00019317356],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00013264197,0.000013423003,0.00015804454,0.000056183326,0.0000074216923,0.000063782616,0.00012237756,0.00059509306,0.9976829,0.0002271704,0.00011340688,0.00082764577],"study_design_scores_gemma":[0.00001840201,0.00003841491,0.00047324927,0.0000030346714,0.0000032172507,0.000023172668,0.000025297577,0.0013644503,0.99738926,0.000023085255,0.00063275255,0.0000056714057],"about_ca_topic_score_codex":0.0024214354,"about_ca_topic_score_gemma":0.0046233,"teacher_disagreement_score":0.0024214354,"about_ca_system_score_codex":0.00063533685,"about_ca_system_score_gemma":0.0005553844,"threshold_uncertainty_score":0.0048146844},"labels":[],"label_agreement":null},{"id":"W2065871086","doi":"10.1117/12.531926","title":"Voltage programmed pixel driver circuits for AMOLED applications: design optimization of pixel select and drive stages","year":2004,"lang":"en","type":"article","venue":"Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":5,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"AMOLED; Thin-film transistor; OLED; Active matrix; Pixel; Transistor; Electronic circuit; Computer science; Materials science; Diode; Optoelectronics; Driver circuit; Voltage; Electronic engineering; Electrical engineering; Artificial intelligence; Nanotechnology; Engineering","score_opus":0.010994891055287555,"score_gpt":0.21241209614214718,"score_spread":0.20141720508685962,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2065871086","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.3975187,0.00719885,0.57084167,0.000867488,0.00022277722,0.00046804425,0.00032343584,0.001793843,0.020765226],"genre_scores_gemma":[0.74888575,0.0027883195,0.23405999,0.00030150427,0.00014206488,0.00024272758,0.00024416795,0.00033816346,0.012997298],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9997867,0.000024805946,0.000013022045,0.0000458088,0.000103650884,0.000026004866],"domain_scores_gemma":[0.99968696,0.00013829122,0.00007163146,0.000014585242,0.00007563229,0.000012868756],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00018168728,0.00035817598,0.0002651418,0.00018786782,0.00029137867,0.0008098211,0.00083309226,0.00039137038,0.0014895004],"category_scores_gemma":[0.0006565493,0.00026805597,0.00015973317,0.00015813315,0.00012965692,0.00062668644,0.00021881505,0.0003228087,0.00056310906],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00010791778,0.000049606704,0.0013322713,0.0003379504,0.000037814516,0.0001514034,0.00012537821,0.00532988,0.918578,0.0031831542,0.001011601,0.0697549],"study_design_scores_gemma":[0.000044349774,0.00087560725,0.00402335,0.000048786707,0.00008122504,0.0013397513,0.00011732132,0.0576122,0.8957399,0.001377077,0.03870473,0.00003566569],"about_ca_topic_score_codex":0.0003637721,"about_ca_topic_score_gemma":0.0016616746,"teacher_disagreement_score":0.0014895004,"about_ca_system_score_codex":0.0006414864,"about_ca_system_score_gemma":0.00040188694,"threshold_uncertainty_score":0.004982829},"labels":[],"label_agreement":null},{"id":"W2066060248","doi":"10.1002/j.2168-0159.2014.tb00042.x","title":"13.2: <i>Invited Paper</i> : LTPS vs Oxide Backplanes for AMOLED Displays: System Design Considerations and Compensation Techniques","year":2014,"lang":"en","type":"article","venue":"SID Symposium Digest of Technical Papers","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":33,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"IGNIS Innovation (Canada)","funders":"","keywords":"Backplane; AMOLED; Compensation (psychology); Materials science; Electronic engineering; Computer science; Optoelectronics; Electrical engineering; Thin-film transistor; Engineering; Nanotechnology; Active matrix","score_opus":0.009189692695971457,"score_gpt":0.19767537155594272,"score_spread":0.18848567885997128,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2066060248","genre_codex":"other","genre_gemma":"methods","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"methods","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.19758989,0.021956697,0.16109005,0.02972663,0.025716443,0.0012954052,0.001539401,0.003766073,0.5573194],"genre_scores_gemma":[0.4547143,0.0070699877,0.0370084,0.0032492913,0.0052171582,0.00017441058,0.00065031636,0.0006154512,0.49130076],"study_design_codex":"bench_or_experimental","study_design_gemma":"not_applicable","domain_scores_codex":[0.9997304,0.000043302458,0.000008321172,0.000048876816,0.00012359014,0.000045510522],"domain_scores_gemma":[0.9997482,0.00005628025,0.00001209082,0.000012477813,0.00014014253,0.000030891868],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000703681,0.00033375222,0.00021697083,0.00030936746,0.000840661,0.0021517107,0.0004894436,0.0011294069,0.015140253],"category_scores_gemma":[0.00052053836,0.00017948997,0.0002483274,0.00026570994,0.00029792893,0.00070022146,0.00024857753,0.00072236016,0.0037416397],"study_design_candidate":"not_applicable","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0015663266,0.00018896567,0.0019401648,0.0009571042,0.000058045847,0.0020348008,0.0004763724,0.0031919086,0.5021367,0.03752007,0.26531783,0.18461177],"study_design_scores_gemma":[0.00009886536,0.0014858396,0.003042239,0.00012490868,0.000072101975,0.0010227571,0.0003446355,0.010546471,0.2930215,0.0042999173,0.6858624,0.000078300895],"about_ca_topic_score_codex":0.00088056596,"about_ca_topic_score_gemma":0.002901797,"teacher_disagreement_score":0.015140253,"about_ca_system_score_codex":0.00095112185,"about_ca_system_score_gemma":0.0003718327,"threshold_uncertainty_score":0.050649226},"labels":[],"label_agreement":null},{"id":"W2066999769","doi":"10.1063/1.3606535","title":"Tetracene thin film transistors with polymer gate dielectrics","year":2011,"lang":"en","type":"article","venue":"Applied Physics Letters","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":19,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Polytechnique Montréal","funders":"","keywords":"Tetracene; Parylene; Materials science; Dielectric; Polymer; Optoelectronics; Transistor; Thin film; Thin-film transistor; Gate dielectric; Organic semiconductor; Silicon dioxide; Silicon; Polystyrene; Nanotechnology; Composite material; Chemistry; Electrical engineering; Layer (electronics); Molecule; Organic chemistry; Voltage","score_opus":0.010577269493199383,"score_gpt":0.1605978295550302,"score_spread":0.15002056006183084,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2066999769","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9975018,0.00058228464,0.0011488424,0.000035255984,0.000012009552,0.000008555528,0.00003763733,0.000026008482,0.00064754003],"genre_scores_gemma":[0.9933008,0.0012197235,0.0036612893,0.000033045966,0.000013425155,0.000024180104,0.00008920598,0.000015312924,0.0016431074],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998909,0.0000095922005,0.000006594384,0.000025347248,0.000048774997,0.000018781138],"domain_scores_gemma":[0.99985754,0.000059712176,0.00003101759,0.000014260275,0.000022228387,0.000015355157],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00010589719,0.00028089734,0.00025391154,0.00014357646,0.0001595989,0.00026700785,0.0003019408,0.00031009037,0.00078401045],"category_scores_gemma":[0.00029962548,0.00018066855,0.00013965259,0.0002181208,0.00020502174,0.0005770994,0.00020705129,0.0002884744,0.00019302996],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000018836845,0.000007784944,0.000086957676,0.000018546503,0.0000034187817,0.000046982095,0.00001418844,0.000082042854,0.9991013,0.00005990043,0.0000127332905,0.00054730143],"study_design_scores_gemma":[0.000006767992,0.00013896855,0.00054390024,0.000002818624,0.000007121404,0.00009816788,0.0000101375435,0.0014919285,0.9972486,0.00003195335,0.00041675218,0.0000028283016],"about_ca_topic_score_codex":0.0006388842,"about_ca_topic_score_gemma":0.0012022983,"teacher_disagreement_score":0.00078401045,"about_ca_system_score_codex":0.00021454236,"about_ca_system_score_gemma":0.00012237117,"threshold_uncertainty_score":0.0026227832},"labels":[],"label_agreement":null},{"id":"W2067413265","doi":"10.1116/1.2186654","title":"Stable a-Si:H circuits based on short-term stress stability of amorphous silicon thin film transistors","year":2006,"lang":"en","type":"article","venue":"Journal of Vacuum Science & Technology A Vacuum Surfaces and Films","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":5,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Thin-film transistor; Active matrix; Materials science; Optoelectronics; Transistor; Amorphous silicon; Electronic circuit; Diode; Stress (linguistics); Silicon; Fabrication; Amorphous solid; Integrated circuit; Electrical engineering; Electronic engineering; Nanotechnology; Crystalline silicon; Engineering; Voltage; Chemistry; Crystallography","score_opus":0.010950798638722276,"score_gpt":0.2105644070956922,"score_spread":0.19961360845696993,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2067413265","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9721149,0.000830784,0.02451596,0.00013908895,0.00006262585,0.00006077192,0.00024754598,0.0006515882,0.0013768415],"genre_scores_gemma":[0.9896062,0.00018218398,0.009133307,0.000032753687,0.00002638827,0.00002906832,0.000076422635,0.000028291752,0.00088537834],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99984705,0.000008964436,0.000011622504,0.000047828227,0.00006095439,0.000023559272],"domain_scores_gemma":[0.9996357,0.00008558616,0.00010361844,0.00004881224,0.000095326686,0.000030863655],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00012628068,0.00019326329,0.00021950944,0.00029503138,0.00020929177,0.0003658876,0.0004963368,0.00034435894,0.0011412879],"category_scores_gemma":[0.00037042756,0.0001429538,0.00014044101,0.00026052355,0.000263607,0.0005096853,0.00015823828,0.00025363377,0.0002554968],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000042161653,0.000011427999,0.00021944438,0.00002172135,0.0000057937045,0.000030515032,0.000017317603,0.00013100362,0.99519944,0.0001658992,0.000080132086,0.004075115],"study_design_scores_gemma":[0.000011095556,0.00021443644,0.0013442005,0.0000021921137,0.0000097471475,0.00008131052,0.0000075500557,0.0043608225,0.99323785,0.00008730369,0.00063848816,0.000004974616],"about_ca_topic_score_codex":0.0003809199,"about_ca_topic_score_gemma":0.0007562091,"teacher_disagreement_score":0.0011412879,"about_ca_system_score_codex":0.0003937279,"about_ca_system_score_gemma":0.00014904668,"threshold_uncertainty_score":0.0038179755},"labels":[],"label_agreement":null},{"id":"W2067637962","doi":"10.1007/s11666-008-9282-1","title":"Ultrafast Thermal Plasma Preparation of Solid Si Films with Potential Application in Photovoltaic Cells: A Parametric Study","year":2008,"lang":"en","type":"article","venue":"Journal of Thermal Spray Technology","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Université de Sherbrooke","funders":"","keywords":"Materials science; Substrate (aquarium); Thermal diffusivity; Silicon; Evaporation; Layer (electronics); Plasma; Chemical engineering; Porous silicon; Diffusion; Analytical Chemistry (journal); Composite material; Optoelectronics; Thermodynamics; Chromatography","score_opus":0.006711077158465884,"score_gpt":0.2180266574631967,"score_spread":0.2113155803047308,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2067637962","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9962978,0.00040924834,0.001815968,0.000053143165,0.000007802981,0.000013570395,0.00005471561,0.000014489913,0.0013333289],"genre_scores_gemma":[0.9976191,0.00020771967,0.0011836115,0.0000074501995,0.000006427848,0.000014490808,0.000052062613,0.000010440084,0.00089870684],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.999897,0.000011168529,0.00000343335,0.00002459497,0.00003856082,0.000025180747],"domain_scores_gemma":[0.9998704,0.00006286431,0.000021204498,0.000019734818,0.000019125524,0.0000067084875],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00020453596,0.00018610347,0.00021050539,0.00011270996,0.00032278252,0.0003154014,0.00032448475,0.00032592393,0.001605206],"category_scores_gemma":[0.00036505106,0.0002420837,0.00016417293,0.00023140054,0.00034761132,0.00045317083,0.00022886142,0.00040173126,0.0001563427],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00007846461,0.000020911695,0.00016652547,0.00003792282,0.0000061277565,0.00003220682,0.00012526097,0.00033242343,0.997124,0.00035530175,0.00007507022,0.0016457023],"study_design_scores_gemma":[0.000026036254,0.00021630219,0.0029172574,0.0000039460037,0.000009525351,0.00010628562,0.00007358785,0.004894576,0.99059945,0.00009833891,0.0010469801,0.000007794988],"about_ca_topic_score_codex":0.0008460238,"about_ca_topic_score_gemma":0.0010980829,"teacher_disagreement_score":0.001605206,"about_ca_system_score_codex":0.00035025142,"about_ca_system_score_gemma":0.00017575061,"threshold_uncertainty_score":0.0053699613},"labels":[],"label_agreement":null},{"id":"W2068054601","doi":"10.1557/proc-836-l8.9","title":"Density of States in Tritiated Amorphous Silicon Measured Using CPM","year":2004,"lang":"en","type":"article","venue":"MRS Proceedings","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Toronto","funders":"","keywords":"Dangling bond; Amorphous silicon; Materials science; Silicon; Annealing (glass); Amorphous solid; Density of states; Conduction band; Photocurrent; Thermal conduction; Analytical Chemistry (journal); Radiochemistry; Atomic physics; Condensed matter physics; Crystallography; Crystalline silicon; Chemistry; Optoelectronics; Nuclear physics; Physics; Composite material; Electron","score_opus":0.016986617814844132,"score_gpt":0.2063795058382024,"score_spread":0.18939288802335824,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2068054601","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9849064,0.00050109404,0.0055886796,0.000112607966,0.000023518438,0.000019997487,0.0003698354,0.00009449104,0.008383378],"genre_scores_gemma":[0.9961408,0.00021028648,0.0013615966,0.000026011194,0.000010244807,0.000022511435,0.00033638443,0.000022293347,0.0018699835],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99970263,0.00007291658,0.000013413796,0.000060690785,0.000083827756,0.00006649756],"domain_scores_gemma":[0.9989454,0.0007084788,0.000098485645,0.000079970734,0.00010125998,0.00006640982],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0007473329,0.00022485544,0.00029587894,0.00080590084,0.0005377239,0.000861194,0.00080196396,0.00045872398,0.005723589],"category_scores_gemma":[0.0014223672,0.00020876183,0.00021508391,0.001093817,0.0008345641,0.00065791415,0.0003830646,0.00090888364,0.0004618664],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0015868207,0.00020148531,0.0067782905,0.00018953443,0.00008267932,0.00077394524,0.00086342834,0.0030742437,0.96574026,0.011795456,0.0005364611,0.008377551],"study_design_scores_gemma":[0.000057723515,0.0007302154,0.021584705,0.000028855578,0.0000575327,0.00034440655,0.00047063208,0.011352872,0.96250343,0.0006655513,0.0021623932,0.000041745665],"about_ca_topic_score_codex":0.0022227555,"about_ca_topic_score_gemma":0.0023423478,"teacher_disagreement_score":0.005723589,"about_ca_system_score_codex":0.00089230476,"about_ca_system_score_gemma":0.00039631553,"threshold_uncertainty_score":0.019147336},"labels":[],"label_agreement":null},{"id":"W2068972096","doi":"10.1139/p02-057","title":"High quantum efficiency of UV-enhanced silicon photodiodes","year":2002,"lang":"en","type":"article","venue":"Canadian Journal of Physics","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":5,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":false,"route_ca_venue":true,"route_about_ca":false,"ca_institutions":"","funders":"","keywords":"Quantum efficiency; Photodiode; Responsivity; Optoelectronics; Physics; Silicon; Dark current; Dopant; Passivation; Ion implantation; Wavelength; Optics; Photodetector; Ion; Doping; Layer (electronics); Materials science; Nanotechnology","score_opus":0.012241518294439646,"score_gpt":0.17685347459789444,"score_spread":0.1646119563034548,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2068972096","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.97028506,0.0012250849,0.020404778,0.000073086325,0.00002415405,0.000021773118,0.00014454845,0.00027883574,0.0075427988],"genre_scores_gemma":[0.9921199,0.00023344974,0.0055214986,0.000019405697,0.0000074026834,0.0000069851985,0.0000578493,0.000016305883,0.002017055],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9996654,0.00004605699,0.0000106803955,0.00006114002,0.00017250227,0.000044176057],"domain_scores_gemma":[0.99975806,0.00008007114,0.000021563703,0.000033325403,0.000091917645,0.000015050589],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00036421747,0.0001578701,0.00017185988,0.00022521161,0.00012210762,0.00046838075,0.00029028702,0.00026573348,0.0010904144],"category_scores_gemma":[0.00057122315,0.00015962232,0.00010323179,0.0002416059,0.0002768982,0.00027627219,0.0001877813,0.00017894144,0.0002579946],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00009977415,0.000023768129,0.0020069377,0.00004098004,0.000020228115,0.000073616146,0.000051180083,0.00085973874,0.98290664,0.0017319104,0.00041091087,0.011774244],"study_design_scores_gemma":[0.000015491652,0.00008842958,0.0057698153,0.000005575458,0.000017609154,0.00018109583,0.000013958752,0.00415715,0.9873261,0.0002362552,0.0021770454,0.000011459774],"about_ca_topic_score_codex":0.00031918992,"about_ca_topic_score_gemma":0.0005240069,"teacher_disagreement_score":0.0010904144,"about_ca_system_score_codex":0.00038749902,"about_ca_system_score_gemma":0.00011306326,"threshold_uncertainty_score":0.0036478043},"labels":[],"label_agreement":null},{"id":"W2069180649","doi":"10.1117/12.795698","title":"Design of anti-reflection coating for spherical silicon photovoltaic devices","year":2008,"lang":"en","type":"article","venue":"Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Materials science; Optics; Silicon; Crystalline silicon; Reflection (computer programming); Refractive index; Angle of incidence (optics); Coating; Optoelectronics; Arc (geometry); Total internal reflection; Photovoltaic system; Geometry; Electrical engineering; Composite material; Computer science; Physics","score_opus":0.021733515734092615,"score_gpt":0.23149417592031202,"score_spread":0.20976066018621942,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2069180649","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.658034,0.0027049773,0.31770867,0.0004125699,0.00029773996,0.0002844807,0.0004486364,0.0010178337,0.01909104],"genre_scores_gemma":[0.8633923,0.00084788253,0.1331719,0.00007043603,0.000036116453,0.000079575526,0.00020878643,0.00009887329,0.00209409],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9996909,0.000021362306,0.000021969296,0.00007257806,0.00014678016,0.000046410194],"domain_scores_gemma":[0.9995597,0.00003980427,0.00013689995,0.000035711364,0.00019666516,0.00003125173],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00020134388,0.00045092835,0.00036716124,0.0002452993,0.00015782344,0.0005690839,0.0007061024,0.00047186902,0.00048179875],"category_scores_gemma":[0.00042009697,0.0003541128,0.0003329831,0.00020855154,0.00014709827,0.00023995485,0.00017956308,0.0002740094,0.0004877637],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000060688817,0.000025953797,0.0003577277,0.00015271056,0.0000169793,0.0000993373,0.000028566257,0.004426072,0.9837467,0.0008748992,0.00045094447,0.009759323],"study_design_scores_gemma":[0.0000417827,0.00034339027,0.0020554303,0.00001479444,0.000049350227,0.0004194845,0.000024654708,0.08481488,0.90525025,0.0002201782,0.006736637,0.000029314931],"about_ca_topic_score_codex":0.0006524598,"about_ca_topic_score_gemma":0.0013251676,"teacher_disagreement_score":0.0007061024,"about_ca_system_score_codex":0.00060550787,"about_ca_system_score_gemma":0.00044419954,"threshold_uncertainty_score":0.0043932796},"labels":[],"label_agreement":null},{"id":"W2069938019","doi":"10.1007/s10854-007-9230-8","title":"Optical properties of nanocrystalline silicon deposited by PECVD","year":2007,"lang":"en","type":"article","venue":"Journal of Materials Science Materials in Electronics","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":21,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Plasma-enhanced chemical vapor deposition; Nanocrystalline silicon; Materials science; Nanocrystalline material; Silane; Analytical Chemistry (journal); Thin film; Amorphous solid; Raman spectroscopy; Silicon; Photocurrent; Amorphous silicon; Chemical vapor deposition; Absorption (acoustics); Hydrogen; Crystalline silicon; Optoelectronics; Nanotechnology; Optics; Chemistry; Crystallography","score_opus":0.007220735776796363,"score_gpt":0.20892357783712523,"score_spread":0.20170284206032887,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2069938019","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9964889,0.00042028126,0.0003722259,0.000037676644,0.000024536728,0.0000037853458,0.00027485035,0.00003244369,0.0023453361],"genre_scores_gemma":[0.9976071,0.00016565395,0.00044253957,0.000016206453,0.0000052885403,0.0000031972197,0.00023064535,0.000010897467,0.0015184557],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998872,0.0000037703685,0.000004358984,0.000025537673,0.000049249382,0.00002975923],"domain_scores_gemma":[0.9997701,0.00008730083,0.000038702805,0.000027920056,0.00005923305,0.000016736441],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00010673916,0.00015649752,0.00021804759,0.00020119168,0.00015642859,0.0003118969,0.00034798018,0.00035020098,0.0027473622],"category_scores_gemma":[0.00032310025,0.00016949364,0.0001801336,0.00023075937,0.00015735131,0.00021187808,0.000107549975,0.00025180544,0.00036933814],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0001835034,0.000024362924,0.00070200895,0.000049810114,0.000014154177,0.00009319218,0.000036892212,0.00053665414,0.9961488,0.00019099942,0.00024822136,0.0017713717],"study_design_scores_gemma":[0.000018027373,0.00014772036,0.008175156,0.0000073505953,0.000017191784,0.0000753672,0.0000476128,0.004352202,0.9862096,0.00004026321,0.0009009359,0.000008712332],"about_ca_topic_score_codex":0.0030842067,"about_ca_topic_score_gemma":0.0042016334,"teacher_disagreement_score":0.0030842067,"about_ca_system_score_codex":0.00050986896,"about_ca_system_score_gemma":0.00022099836,"threshold_uncertainty_score":0.009190798},"labels":[],"label_agreement":null},{"id":"W2070251136","doi":"10.1116/1.1463073","title":"Dry etch process optimization for small-area<i>a</i>-Si:H vertical thin film transistor","year":2002,"lang":"en","type":"article","venue":"Journal of Vacuum Science & Technology A Vacuum Surfaces and Films","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":8,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Materials science; Fabrication; Dry etching; Etching (microfabrication); Thin-film transistor; Transistor; Silicon; Optoelectronics; Amorphous solid; Deposition (geology); Plasma; Plasma etching; Amorphous silicon; Thin film; Reactive-ion etching; Nanotechnology; Layer (electronics); Electrical engineering; Crystalline silicon; Chemistry; Crystallography; Geology; Engineering; Voltage","score_opus":0.015928772734105697,"score_gpt":0.21916777337460072,"score_spread":0.20323900064049502,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2070251136","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.97866714,0.0019239264,0.017570086,0.000079054895,0.000054857734,0.000052730058,0.00018390265,0.00014816181,0.001320252],"genre_scores_gemma":[0.9816097,0.0010217058,0.016151257,0.00002936348,0.000026648922,0.000027336826,0.00015039097,0.000054590633,0.00092897314],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998995,0.0000075141065,0.0000075182706,0.000024210536,0.000041366977,0.000019903233],"domain_scores_gemma":[0.9998785,0.000031910276,0.00004704794,0.000009956947,0.000020884147,0.000011654536],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0001506316,0.00034621218,0.0003025237,0.00016295954,0.00021010934,0.00035295708,0.00027107215,0.00021828765,0.00061814196],"category_scores_gemma":[0.00022392585,0.00022540429,0.00024275306,0.00016602913,0.00016466097,0.0003095333,0.00018184725,0.00026334173,0.00015726012],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000026909585,0.0000071783834,0.00016373069,0.000054461547,0.0000052322857,0.00003084946,0.000012586087,0.00018542416,0.9979074,0.00003603621,0.000044527013,0.0015257136],"study_design_scores_gemma":[0.000016993736,0.00021760592,0.0017908168,0.0000031444965,0.000017719594,0.00015496637,0.000028502474,0.0027453534,0.9937372,0.000035170455,0.0012461379,0.0000064083215],"about_ca_topic_score_codex":0.0004176015,"about_ca_topic_score_gemma":0.0013432385,"teacher_disagreement_score":0.00061814196,"about_ca_system_score_codex":0.0002393758,"about_ca_system_score_gemma":0.0002134939,"threshold_uncertainty_score":0.002067864},"labels":[],"label_agreement":null},{"id":"W2070785652","doi":"10.1088/0268-1242/16/5/101","title":"Optimization of p-doping in GaAs photon-recycling light-emitting diodes operated at low temperature","year":2001,"lang":"en","type":"article","venue":"Semiconductor Science and Technology","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":8,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Genia Photonics (Canada); Institute for Microstructural Sciences","funders":"Air Force Research Laboratory; U.S. Air Force","keywords":"Beryllium; Doping; Diode; Impurity; Photon; Optoelectronics; Recombination; Light-emitting diode; Chemistry; Atomic physics; Materials science; Optics; Physics","score_opus":0.008301852003088812,"score_gpt":0.21456036362257955,"score_spread":0.20625851161949074,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2070785652","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9942437,0.0012529526,0.0019324712,0.000113577895,0.000025075533,0.00003146872,0.000093233124,0.00008023635,0.0022272938],"genre_scores_gemma":[0.99583924,0.00049635966,0.0022301418,0.000026873617,0.000009311104,0.000023573532,0.00007120593,0.000075975055,0.0012273872],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9997657,0.000028893066,0.000021135314,0.000062004314,0.00007597797,0.00004644041],"domain_scores_gemma":[0.99969757,0.00011045809,0.00008014185,0.000020619143,0.00006274857,0.000028454822],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00033782012,0.00039655343,0.0005404709,0.0003159826,0.0006471345,0.00122967,0.0006428687,0.0005429897,0.0009370709],"category_scores_gemma":[0.0006946026,0.00036409113,0.0003209319,0.00042295235,0.00029461368,0.00050789793,0.00027536997,0.00027080558,0.0004248897],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00095908466,0.0001388746,0.0017944489,0.00020813123,0.000038588998,0.00012779377,0.00010771891,0.0033605178,0.98619634,0.00054012326,0.00024269716,0.0062857536],"study_design_scores_gemma":[0.000049989947,0.0004016748,0.0020883197,0.000026149071,0.000041629057,0.000101297104,0.000052889663,0.0098736165,0.98640037,0.000096885866,0.00085010385,0.000017074271],"about_ca_topic_score_codex":0.0026994233,"about_ca_topic_score_gemma":0.0050721527,"teacher_disagreement_score":0.0026994233,"about_ca_system_score_codex":0.001176082,"about_ca_system_score_gemma":0.0007332136,"threshold_uncertainty_score":0.00853318},"labels":[],"label_agreement":null},{"id":"W2071046234","doi":"10.1063/1.2162685","title":"Optical upconverter with integrated heterojunction phototransistor and light-emitting diode","year":2006,"lang":"en","type":"article","venue":"Applied Physics Letters","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":21,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Institute for Microstructural Sciences","funders":"","keywords":"Photocurrent; Optoelectronics; Materials science; Photodiode; Photon upconversion; Wafer; Diode; Heterojunction; Light-emitting diode; Silicon; Photoresistor; Optics; Doping; Physics","score_opus":0.003465175927932551,"score_gpt":0.14631181020779652,"score_spread":0.14284663427986397,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2071046234","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.97279423,0.0014998165,0.018409476,0.00013008139,0.00008248975,0.000051090552,0.000172802,0.00069776824,0.006162216],"genre_scores_gemma":[0.97441214,0.00054553396,0.021878883,0.000041634186,0.00003133639,0.000022410512,0.00013084114,0.0000248297,0.0029122822],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99976414,0.00001492843,0.000010395519,0.000050328465,0.00011050084,0.00004981181],"domain_scores_gemma":[0.99991643,0.000016653228,0.000017847453,0.00001680944,0.000018185321,0.000014004779],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00014601508,0.0001796225,0.00027044798,0.00023834438,0.00019310469,0.00038793148,0.00056553166,0.00027445468,0.0008679016],"category_scores_gemma":[0.00018960674,0.00019724386,0.00022327283,0.00026840685,0.00018074592,0.00039650092,0.00029308096,0.00033040743,0.00030856332],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00005513491,0.000043850152,0.00052690256,0.00004142995,0.000012398785,0.00014224573,0.00003367226,0.0004111193,0.9914722,0.0010450332,0.00025334838,0.0059628133],"study_design_scores_gemma":[0.000028347025,0.00020011794,0.0025496974,0.000008357274,0.000037446556,0.0005608486,0.0000180056,0.008838311,0.9832577,0.00024274526,0.004247792,0.000010725049],"about_ca_topic_score_codex":0.0003789846,"about_ca_topic_score_gemma":0.0009226174,"teacher_disagreement_score":0.0008679016,"about_ca_system_score_codex":0.0003928182,"about_ca_system_score_gemma":0.00017109697,"threshold_uncertainty_score":0.0029034019},"labels":[],"label_agreement":null},{"id":"W2071176868","doi":"10.1134/s106378260608015x","title":"Low-temperature materials and thin-film transistors for electronics on flexible substrates","year":2006,"lang":"en","type":"article","venue":"Semiconductors","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":11,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Materials science; Thin-film transistor; Nanocrystalline silicon; Optoelectronics; Thin film; Silicon; Silicon nitride; Fabrication; Amorphous solid; Transistor; Amorphous silicon; Nanocrystalline material; Electronics; Semiconductor; Nanotechnology; Electrical engineering; Crystalline silicon; Crystallography; Layer (electronics); Chemistry","score_opus":0.00763640533388365,"score_gpt":0.19883134825639215,"score_spread":0.1911949429225085,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2071176868","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.7358505,0.056667283,0.15418473,0.0008648878,0.00067073875,0.00021229153,0.00080994004,0.0006475561,0.05009207],"genre_scores_gemma":[0.8604429,0.019592334,0.10822384,0.00017066704,0.00019527218,0.00014497424,0.000377335,0.000084013154,0.01076875],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999279,0.000007967493,0.000004158271,0.00001221557,0.00004047246,0.0000072021917],"domain_scores_gemma":[0.99993086,0.000029683544,0.000013535945,0.000009989294,0.000009526061,0.0000063757097],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0001043431,0.00027423626,0.00019839521,0.00022803871,0.00020663279,0.00046175704,0.000365417,0.00028448107,0.0016325635],"category_scores_gemma":[0.000163608,0.00019408172,0.00017945319,0.00021625333,0.00028027242,0.0004012704,0.0001516946,0.00050428207,0.0005679008],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000019363599,0.000010002987,0.0001321277,0.0002466418,0.0000059990316,0.00014020698,0.000026031383,0.0004336078,0.9871646,0.005738903,0.00023598557,0.005846514],"study_design_scores_gemma":[0.000015094969,0.00021451587,0.0014698394,0.000041044706,0.000023203445,0.0006724617,0.000047400434,0.0037942685,0.9714612,0.0032603766,0.018984836,0.000015892216],"about_ca_topic_score_codex":0.00017920318,"about_ca_topic_score_gemma":0.0005149205,"teacher_disagreement_score":0.0016325635,"about_ca_system_score_codex":0.0002358957,"about_ca_system_score_gemma":0.00014319991,"threshold_uncertainty_score":0.005461514},"labels":[],"label_agreement":null},{"id":"W2071695584","doi":"10.1063/1.3569702","title":"Metastability mechanisms in thin film transistors quantitatively resolved using post-stress relaxation of threshold voltage","year":2011,"lang":"en","type":"article","venue":"Journal of Applied Physics","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":22,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Thin-film transistor; Materials science; Trapping; Metastability; Dielectric; Relaxation (psychology); Stress (linguistics); Gate dielectric; Transistor; Threshold voltage; Condensed matter physics; High-κ dielectric; Amorphous solid; Stress relaxation; Optoelectronics; Voltage; Layer (electronics); Chemistry; Nanotechnology; Electrical engineering; Physics; Crystallography","score_opus":0.036946131235369106,"score_gpt":0.22910135923879402,"score_spread":0.1921552280034249,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2071695584","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9712602,0.0011436205,0.026543202,0.00006049065,0.000020518,0.000020941363,0.00014510675,0.000195394,0.00061058736],"genre_scores_gemma":[0.9954764,0.00026727252,0.0038646227,0.000012054174,0.0000057691072,0.000012039526,0.000060529448,0.000012632256,0.00028862833],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999461,0.0000039153792,0.0000031887776,0.000016217642,0.00002085803,0.000009654773],"domain_scores_gemma":[0.9997906,0.00009029994,0.00005610696,0.00002338875,0.000027308777,0.000012263615],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00013090229,0.00025268132,0.00016563082,0.00026006368,0.0001566419,0.00023961764,0.00029130562,0.0002955818,0.00052248494],"category_scores_gemma":[0.0002918886,0.00013810322,0.00014597153,0.00013934026,0.00029308684,0.000435085,0.00013313597,0.00042357272,0.000075286174],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000029848303,0.0000078748135,0.0005528281,0.00003178699,0.00000592334,0.00005492289,0.000029285586,0.00057946244,0.99634796,0.00017970522,0.000012590855,0.0021678417],"study_design_scores_gemma":[0.0000066666125,0.00017057521,0.0053377883,0.0000054667935,0.000014004777,0.00023739572,0.00003820434,0.025023043,0.9683382,0.0004329191,0.0003840868,0.000011711935],"about_ca_topic_score_codex":0.00052141113,"about_ca_topic_score_gemma":0.0007411061,"teacher_disagreement_score":0.00052248494,"about_ca_system_score_codex":0.00036482824,"about_ca_system_score_gemma":0.0001371238,"threshold_uncertainty_score":0.0026469827},"labels":[],"label_agreement":null},{"id":"W2071875782","doi":"10.1080/15980316.2005.9651978","title":"Printed polymer and a‐Si TFT backplanes for flexible displays","year":2005,"lang":"en","type":"article","venue":"Journal of Information Display","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Xerox (Canada)","funders":"National Institute of Standards and Technology","keywords":"Backplane; Thin-film transistor; Materials science; Flexible display; Photolithography; Oxide thin-film transistor; Optoelectronics; Amorphous silicon; Transistor; Subtractive color; Photomask; Computer science; Nanotechnology; Silicon; Electrical engineering; Computer hardware; Optics; Crystalline silicon; Engineering","score_opus":0.005700261701192903,"score_gpt":0.2085083490489911,"score_spread":0.2028080873477982,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2071875782","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.91268563,0.008709455,0.037660338,0.0006030159,0.0011330302,0.00007495141,0.00053094834,0.0011954841,0.037407026],"genre_scores_gemma":[0.9630065,0.0018733318,0.016728844,0.00014690537,0.000116518655,0.000027176779,0.00018136221,0.0001184684,0.017800853],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999255,0.000005653801,0.000003592832,0.00001803693,0.000028341186,0.000018829978],"domain_scores_gemma":[0.9998877,0.00003942512,0.000018220231,0.000019868976,0.000020724226,0.000014034285],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0000956733,0.0002668473,0.00016246988,0.00025780723,0.00027419836,0.0005207386,0.0003302374,0.00042202545,0.00403328],"category_scores_gemma":[0.00023603879,0.00023207643,0.00020319746,0.00019058897,0.00022573874,0.0006520029,0.00022766225,0.0004914386,0.0010347689],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00010455231,0.00002230863,0.00011131096,0.00011160657,0.000009513818,0.00013770824,0.000036092155,0.00045028777,0.98673546,0.00109227,0.0007250517,0.010463835],"study_design_scores_gemma":[0.00001537748,0.00016873924,0.00078481174,0.000011752152,0.000012563342,0.00016120124,0.000023201303,0.0022616624,0.9920276,0.00028823494,0.004236703,0.000008284554],"about_ca_topic_score_codex":0.00031631778,"about_ca_topic_score_gemma":0.0007139243,"teacher_disagreement_score":0.00403328,"about_ca_system_score_codex":0.00022607841,"about_ca_system_score_gemma":0.000104468745,"threshold_uncertainty_score":0.013492644},"labels":[],"label_agreement":null},{"id":"W2072446888","doi":"10.1116/1.3093887","title":"Indium oxides by reactive ion beam assisted evaporation: From material study to device application","year":2009,"lang":"en","type":"article","venue":"Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":2,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Materials science; Thin-film transistor; Plasma-enhanced chemical vapor deposition; Optoelectronics; Gate dielectric; Indium; Threshold voltage; Ion beam; Evaporation; Dielectric; Gate oxide; Chemical vapor deposition; Transistor; Ion; Nanotechnology; Voltage; Chemistry; Electrical engineering","score_opus":0.009887680003843763,"score_gpt":0.22504750649946675,"score_spread":0.21515982649562299,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2072446888","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9362641,0.023022814,0.029033566,0.00037837846,0.0001071274,0.0001386797,0.0003447811,0.00024276246,0.010467854],"genre_scores_gemma":[0.9646847,0.009937847,0.02165129,0.00009493789,0.000032977045,0.00003422973,0.00023401885,0.000039160983,0.0032907946],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99994445,0.0000065303743,0.000004060289,0.000013534994,0.000020772557,0.000010680302],"domain_scores_gemma":[0.9999509,0.0000115187995,0.0000076116685,0.000008284314,0.000016494663,0.000005204968],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00015177492,0.0002604597,0.00019424889,0.00019993566,0.0001601089,0.0003495069,0.00041127572,0.00025018127,0.00058548164],"category_scores_gemma":[0.00013543294,0.00016146725,0.000118464675,0.00020901878,0.0001788744,0.000316643,0.00013327684,0.00025660463,0.000258523],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000013903993,0.000009351646,0.000102585625,0.000054671913,0.000003057432,0.000061407874,0.000014606251,0.00007135671,0.99764144,0.00020379596,0.000035979978,0.001787788],"study_design_scores_gemma":[0.000004229779,0.0001237814,0.00070183614,0.000005790372,0.000008508431,0.00024032044,0.000012109028,0.00043644584,0.99387413,0.00006405804,0.004525105,0.0000035988742],"about_ca_topic_score_codex":0.0002718004,"about_ca_topic_score_gemma":0.0003683708,"teacher_disagreement_score":0.00058548164,"about_ca_system_score_codex":0.0002260047,"about_ca_system_score_gemma":0.00016877872,"threshold_uncertainty_score":0.0019586682},"labels":[],"label_agreement":null},{"id":"W2073223851","doi":"10.1116/1.582248","title":"Optimization of n+μc-Si:H contact layer for low leakage current in a-Si:H thin film transistors","year":2000,"lang":"en","type":"article","venue":"Journal of Vacuum Science & Technology A Vacuum Surfaces and Films","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":12,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Dalsa Corporation; University of Waterloo","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Materials science; Thin-film transistor; Leakage (economics); Diffusion barrier; Layer (electronics); Optoelectronics; Silicon; Transistor; Conductivity; Threshold voltage; Analytical Chemistry (journal); Dopant; Contact resistance; Doping; Voltage; Electrical engineering; Nanotechnology; Chemistry; Physical chemistry","score_opus":0.010784646119884481,"score_gpt":0.2344978077770349,"score_spread":0.22371316165715044,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2073223851","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9883726,0.0014203228,0.007972636,0.00010637923,0.000046680194,0.000059913298,0.00021998881,0.00022105737,0.0015805215],"genre_scores_gemma":[0.99064064,0.0005086143,0.008094776,0.000020385549,0.000012782257,0.00004202788,0.00010762842,0.000040143,0.00053304405],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.999821,0.000013985666,0.000016632244,0.00004854796,0.00006942989,0.000030279705],"domain_scores_gemma":[0.9997116,0.00007979818,0.00007844385,0.000027926038,0.00006381456,0.000038526283],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0002127865,0.00043770307,0.0004974813,0.00027311768,0.00036921687,0.0006361678,0.0005820844,0.0004617733,0.00066946016],"category_scores_gemma":[0.0005369193,0.00035714253,0.00030222908,0.0003465761,0.00022598232,0.00040807482,0.00023076819,0.00025719445,0.0003301628],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000064642045,0.00003507111,0.00042183336,0.00012522943,0.0000143052985,0.00012494993,0.00003145739,0.0018430292,0.9953076,0.00008532937,0.00013440898,0.0018120693],"study_design_scores_gemma":[0.000046690904,0.0003103658,0.0022664855,0.000011016851,0.000025730804,0.00012043792,0.000029475597,0.012956617,0.9832091,0.00007419718,0.0009348941,0.000014995569],"about_ca_topic_score_codex":0.0015379421,"about_ca_topic_score_gemma":0.003335011,"teacher_disagreement_score":0.0015379421,"about_ca_system_score_codex":0.000690764,"about_ca_system_score_gemma":0.00047637805,"threshold_uncertainty_score":0.005011797},"labels":[],"label_agreement":null},{"id":"W2073424857","doi":"10.1016/j.solmat.2007.01.019","title":"Spectral response and field enhanced reverse current in a-Ge:H nip photodiodes","year":2007,"lang":"en","type":"article","venue":"Solar Energy Materials and Solar Cells","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":9,"is_retracted":false,"has_abstract":false,"route_ca_aff":false,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Photodiode; NIP; Current (fluid); Optoelectronics; Field (mathematics); Materials science; Optics; Reverse bias; Germanium; Physics; Silicon; Mathematics; Diode","score_opus":0.006651163297185597,"score_gpt":0.20482081806382582,"score_spread":0.19816965476664022,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2073424857","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9942416,0.0002776502,0.0019382599,0.00019057156,0.000024804862,0.000013175622,0.0002332192,0.00019058192,0.0028902248],"genre_scores_gemma":[0.9973091,0.000088484085,0.00072697515,0.000059822585,0.000011418494,0.000007909307,0.00007856185,0.00002158865,0.0016960137],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.999795,0.000032141743,0.0000070998262,0.00007216239,0.00004698249,0.00004653585],"domain_scores_gemma":[0.9992599,0.00040299862,0.0000837602,0.00006101959,0.00012472559,0.00006766296],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00032834595,0.00026558936,0.00021537654,0.00029071022,0.00028069603,0.00047888074,0.00078115985,0.0008102356,0.003299702],"category_scores_gemma":[0.0008116095,0.00016644681,0.00018982652,0.00026236838,0.00049145595,0.00054401386,0.00020403245,0.0007122417,0.0004889728],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00076105056,0.000091296635,0.0010515666,0.00007303326,0.000021319727,0.00038241904,0.0002515267,0.00033049323,0.99314076,0.00064925203,0.00041132155,0.002836026],"study_design_scores_gemma":[0.000052497497,0.0003532206,0.010093286,0.000023705234,0.000029263962,0.0005818249,0.00018959946,0.008079981,0.97903043,0.00026603488,0.0012796092,0.00002038812],"about_ca_topic_score_codex":0.0013705884,"about_ca_topic_score_gemma":0.0014508506,"teacher_disagreement_score":0.003299702,"about_ca_system_score_codex":0.0006107815,"about_ca_system_score_gemma":0.00017191135,"threshold_uncertainty_score":0.011038661},"labels":[],"label_agreement":null},{"id":"W2073603868","doi":"10.1002/j.2168-0159.2014.tb00167.x","title":"44.4L: <i>Late‐News Paper</i>: Large Area Display Backplane Using Embedded Single‐Crystal Silicon Particles","year":2014,"lang":"en","type":"article","venue":"SID Symposium Digest of Technical Papers","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":4,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Christie (Canada); University of Waterloo","funders":"Mitacs","keywords":"Backplane; Materials science; Optoelectronics; Silicon; Scalability; OLED; Crystal (programming language); Thin-film transistor; Computer science; Nanotechnology; Computer hardware","score_opus":0.010659453286500425,"score_gpt":0.20730720548186668,"score_spread":0.19664775219536626,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2073603868","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.61066395,0.0028200573,0.014460582,0.008907705,0.004128518,0.00030246808,0.004906579,0.0027169723,0.35109317],"genre_scores_gemma":[0.8442611,0.0008387865,0.007807207,0.0010013963,0.00044948264,0.000066895154,0.0020458375,0.0003559045,0.1431734],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99992096,0.0000040442023,0.0000026367447,0.0000100371135,0.000041652776,0.000020709169],"domain_scores_gemma":[0.9999161,0.000020083136,0.0000070807105,0.000009374059,0.00002845111,0.000018968873],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00014302469,0.00014813564,0.00013678256,0.00022596765,0.00067448197,0.0008953754,0.0002278047,0.00045083504,0.02108132],"category_scores_gemma":[0.00012478621,0.00009814178,0.00015709556,0.000106512634,0.00022192577,0.0002829061,0.00020278501,0.00043309113,0.0035623212],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00032001344,0.0001284726,0.0013633796,0.00014865736,0.000020068976,0.0009401561,0.00012798762,0.0003109485,0.898039,0.0030101137,0.076294854,0.01929646],"study_design_scores_gemma":[0.00003751708,0.0002236133,0.0047045383,0.000012281302,0.000012544137,0.00028292774,0.00007409823,0.0014674544,0.8643108,0.0002334618,0.12862147,0.00001925924],"about_ca_topic_score_codex":0.0016691246,"about_ca_topic_score_gemma":0.0033877736,"teacher_disagreement_score":0.02108132,"about_ca_system_score_codex":0.0005175753,"about_ca_system_score_gemma":0.00029475303,"threshold_uncertainty_score":0.0705241},"labels":[],"label_agreement":null},{"id":"W2073626026","doi":"10.1016/j.ssc.2010.06.034","title":"Defect absorption and optical transitions in hydrogenated amorphous silicon","year":2010,"lang":"en","type":"article","venue":"Solid State Communications","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":12,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Okanagan University College; University of British Columbia, Okanagan Campus; University of British Columbia; University of Windsor","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Amorphous silicon; Materials science; Silicon; Formalism (music); Amorphous solid; Attenuation coefficient; Density of states; Absorption (acoustics); Molecular physics; Optical density; Optoelectronics; Condensed matter physics; Optics; Chemistry; Physics; Crystalline silicon; Crystallography","score_opus":0.012536064602766803,"score_gpt":0.24217955863189025,"score_spread":0.22964349402912346,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2073626026","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9972254,0.00020841559,0.0005723981,0.00007249676,0.000010896404,0.0000023381606,0.000035428737,0.000026825443,0.0018458127],"genre_scores_gemma":[0.9990746,0.00006496781,0.00017046722,0.000013883287,0.000004077115,0.0000022295603,0.000031380507,0.0000051509887,0.0006332034],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999465,0.000006007263,0.000001932606,0.000011339021,0.000017730184,0.000016448124],"domain_scores_gemma":[0.9998129,0.00012342531,0.000022842494,0.000012625149,0.000015216076,0.000012936223],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00012447698,0.00015449163,0.00015252395,0.000440168,0.0003448535,0.00037201602,0.00046138352,0.0003620181,0.0022340668],"category_scores_gemma":[0.00024160223,0.0001493349,0.00010940964,0.00029027817,0.00055755343,0.00036393688,0.00026979562,0.0004077968,0.00015730152],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00078740454,0.00015497745,0.0024595656,0.00014711711,0.0000301832,0.00054895016,0.0005171966,0.0028559924,0.9745025,0.012171578,0.00057408714,0.0052504344],"study_design_scores_gemma":[0.00012737114,0.0005296018,0.012769517,0.000025284835,0.000031012467,0.000413004,0.0006508659,0.049989138,0.9289854,0.0041004154,0.002342895,0.000035605037],"about_ca_topic_score_codex":0.0009665779,"about_ca_topic_score_gemma":0.0012682038,"teacher_disagreement_score":0.0022340668,"about_ca_system_score_codex":0.00033322317,"about_ca_system_score_gemma":0.00012100197,"threshold_uncertainty_score":0.007473707},"labels":[],"label_agreement":null},{"id":"W2073711341","doi":"10.1016/j.jnoncrysol.2007.09.042","title":"Performance of a-Si:H n–i–p photodiodes on plastic substrate","year":2008,"lang":"en","type":"article","venue":"Journal of Non-Crystalline Solids","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":8,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Natural Sciences and Engineering Research Council of Canada; Carestream Health","keywords":"Photodiode; Dark current; Passivation; Plasma-enhanced chemical vapor deposition; Materials science; Optoelectronics; Substrate (aquarium); Diode; Quantum efficiency; Chemical vapor deposition; Photodetector; Layer (electronics); Nanotechnology","score_opus":0.013915802335248008,"score_gpt":0.20741397063842487,"score_spread":0.19349816830317687,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2073711341","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99718493,0.00031508176,0.00079871266,0.00005976325,0.00004191525,0.000008081461,0.00015412475,0.000092583345,0.0013447341],"genre_scores_gemma":[0.99735606,0.00015515221,0.00052663806,0.00002023401,0.000007832573,0.0000063042103,0.00010058514,0.000014535424,0.0018127405],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99982136,0.000016402835,0.000010007469,0.00006181304,0.000041867497,0.000048603568],"domain_scores_gemma":[0.99953437,0.00017252918,0.000062100495,0.00006948455,0.000114359915,0.00004714419],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00018272708,0.00035408948,0.0002065995,0.00023570706,0.00026289572,0.0004049902,0.0006198464,0.0005984249,0.0027366425],"category_scores_gemma":[0.0005691498,0.00022862609,0.00018118437,0.0002991548,0.00017324026,0.00040986802,0.0002209853,0.00023488978,0.0004669433],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0006444304,0.000029704584,0.0011338356,0.00008494269,0.000028427012,0.00019375955,0.000050745493,0.0007060337,0.99337065,0.00010117242,0.00028961504,0.0033667183],"study_design_scores_gemma":[0.000018185674,0.00051957153,0.008315852,0.000011180003,0.00003052477,0.00012973057,0.000068173424,0.0044161575,0.98567516,0.000030809922,0.0007737467,0.000010969453],"about_ca_topic_score_codex":0.0014621357,"about_ca_topic_score_gemma":0.0015331608,"teacher_disagreement_score":0.0027366425,"about_ca_system_score_codex":0.00036004267,"about_ca_system_score_gemma":0.00020802427,"threshold_uncertainty_score":0.009154916},"labels":[],"label_agreement":null},{"id":"W2073882119","doi":"10.1889/1.3256729","title":"15.4: Excellent Performance of Indium‐Oxide‐Based Thin‐Film Transistors by DC Sputtering","year":2009,"lang":"en","type":"article","venue":"SID Symposium Digest of Technical Papers","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":16,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"CIS Scientific","funders":"","keywords":"Thin-film transistor; Materials science; Sputtering; Optoelectronics; Oxide; Active layer; Layer (electronics); Indium; Transistor; Oxide thin-film transistor; Thin film; Nanotechnology; Electrical engineering; Metallurgy; Voltage","score_opus":0.005223251414633689,"score_gpt":0.18702624267602694,"score_spread":0.18180299126139324,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2073882119","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9750234,0.0018073386,0.0042350534,0.00031549626,0.00015865055,0.000034191493,0.0009481759,0.00169124,0.015786318],"genre_scores_gemma":[0.9825278,0.00060336245,0.0038871455,0.00007878329,0.000038528695,0.00003060996,0.0009272611,0.0002598536,0.011646704],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99981886,0.000008587088,0.000011590131,0.000027135711,0.00007589886,0.000057940884],"domain_scores_gemma":[0.9997937,0.000036542006,0.000027914648,0.000026526222,0.00007481561,0.000040561223],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00017064255,0.00032007726,0.00037967908,0.00038883337,0.00029446767,0.00053213746,0.0005810897,0.00037045244,0.0059698853],"category_scores_gemma":[0.00031290445,0.00016574803,0.00017564137,0.00020601272,0.00018256146,0.00026344947,0.0002122651,0.00024162665,0.0018648437],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00014849965,0.000024062105,0.0004752988,0.000061282866,0.000015565796,0.00010184403,0.00003773419,0.00017303695,0.99452776,0.00013128477,0.0011428639,0.0031607512],"study_design_scores_gemma":[0.000014665059,0.000120864504,0.00222396,0.000010063855,0.00001560663,0.00010373751,0.000009908094,0.0010567829,0.9920753,0.000039759696,0.004322813,0.000006491774],"about_ca_topic_score_codex":0.0020764412,"about_ca_topic_score_gemma":0.001956909,"teacher_disagreement_score":0.0059698853,"about_ca_system_score_codex":0.00046878456,"about_ca_system_score_gemma":0.00030183428,"threshold_uncertainty_score":0.019971251},"labels":[],"label_agreement":null},{"id":"W2074634573","doi":"10.1557/proc-1066-a18-08","title":"Physically Based Compact Model for Segmented a-Si:H <i>n-i-p</i> Photodiodes","year":2008,"lang":"en","type":"article","venue":"MRS Proceedings","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":2,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Photodiode; Materials science; Detector; Optoelectronics; Amorphous silicon; Pixel; Silicon; Optics; Crystalline silicon; Physics","score_opus":0.024246411956796513,"score_gpt":0.21007167426235265,"score_spread":0.18582526230555613,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2074634573","genre_codex":"methods","genre_gemma":"methods","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"methods","genre_consensus":"methods","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.09358386,0.0022220304,0.8065538,0.001690675,0.00037203898,0.00019849328,0.0010968109,0.0010409621,0.093241446],"genre_scores_gemma":[0.9144362,0.0011695308,0.041036174,0.0003956266,0.00013133051,0.00036747332,0.0003728484,0.00022379671,0.041866954],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9997694,0.000031196014,0.000007360368,0.000058677182,0.00010204849,0.00003136453],"domain_scores_gemma":[0.999703,0.000103929444,0.000038918795,0.00005239469,0.000081151025,0.000020584086],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00028624348,0.000700639,0.0010210391,0.0005013974,0.00060149666,0.0017308622,0.0028688577,0.002942249,0.005280863],"category_scores_gemma":[0.00079107913,0.0007590866,0.0008942795,0.0005367016,0.0010412273,0.002372359,0.0006618479,0.00093336083,0.0012886439],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00009600505,0.00009977264,0.00045254896,0.00019850355,0.00007234316,0.00045654745,0.00020249687,0.8605396,0.035407152,0.09491485,0.0019255355,0.0056346096],"study_design_scores_gemma":[0.000010656026,0.000016376986,0.00014368058,0.0000059356967,0.000010287016,0.00006080779,0.000015344809,0.99212027,0.000994376,0.0058375043,0.0007733008,0.000011466916],"about_ca_topic_score_codex":0.0036330428,"about_ca_topic_score_gemma":0.0037905516,"teacher_disagreement_score":0.005280863,"about_ca_system_score_codex":0.0015712917,"about_ca_system_score_gemma":0.0007228612,"threshold_uncertainty_score":0.01766622},"labels":[],"label_agreement":null},{"id":"W2075371655","doi":"10.1109/led.2005.853670","title":"Top-gate TFTs using 13.56 MHz PECVD microcrystalline silicon","year":2005,"lang":"en","type":"article","venue":"IEEE Electron Device Letters","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":28,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Thin-film transistor; Materials science; Plasma-enhanced chemical vapor deposition; Silicon nitride; Optoelectronics; Gate dielectric; Threshold voltage; Silicon; Subthreshold slope; Amorphous silicon; Microcrystalline; Amorphous solid; Dielectric; Chemical vapor deposition; Transistor; Analytical Chemistry (journal); Layer (electronics); Electrical engineering; Nanotechnology; Voltage; Crystalline silicon; Crystallography; Chemistry","score_opus":0.009683283070678382,"score_gpt":0.2171916700592174,"score_spread":0.20750838698853902,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2075371655","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.93292254,0.0024639687,0.047203783,0.00018448044,0.00016046719,0.00011737646,0.0026086844,0.0013351643,0.013003584],"genre_scores_gemma":[0.9527375,0.0013996514,0.03524521,0.00012092272,0.000038352035,0.00007425872,0.0016658064,0.00015203051,0.008566193],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999167,0.000002606318,0.0000044491935,0.000028339991,0.000029994004,0.000017928967],"domain_scores_gemma":[0.9998957,0.000030595125,0.000015431995,0.000013190233,0.00003337758,0.000011751411],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00006746931,0.00030673514,0.00024162712,0.00012376826,0.00014599782,0.00023665218,0.0003758787,0.00025371672,0.0018498166],"category_scores_gemma":[0.0002110786,0.00016571139,0.00016959776,0.00023348887,0.00014904242,0.00023650602,0.0001251882,0.00024137383,0.0007995943],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000029384908,0.0000038649923,0.000175019,0.000030725183,0.000005303919,0.000052665826,0.000013859574,0.000108719134,0.9959292,0.00005670196,0.00022936084,0.0033650596],"study_design_scores_gemma":[0.00000536062,0.000044612083,0.0014017922,0.00000285396,0.0000142221415,0.00019942275,0.000008847554,0.0010259021,0.9934629,0.000027561638,0.0038029314,0.000003654534],"about_ca_topic_score_codex":0.0029264605,"about_ca_topic_score_gemma":0.0056344797,"teacher_disagreement_score":0.0029264605,"about_ca_system_score_codex":0.00053160946,"about_ca_system_score_gemma":0.0002304632,"threshold_uncertainty_score":0.0061882734},"labels":[],"label_agreement":null},{"id":"W2076155408","doi":"10.1063/1.1852729","title":"Orientation-dependent strain tolerance of amorphous silicon transistors and pixel circuits for elastic organic light-emitting diode displays","year":2005,"lang":"en","type":"article","venue":"Applied Physics Letters","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":30,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Active matrix; Materials science; Thin-film transistor; Optoelectronics; Diode; Amorphous silicon; Silicon; OLED; Electronic circuit; Transistor; Amorphous solid; Orientation (vector space); Crystalline silicon; Electrical engineering; Nanotechnology; Crystallography; Chemistry; Voltage","score_opus":0.006601178898959045,"score_gpt":0.18698645065613642,"score_spread":0.1803852717571774,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2076155408","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.998099,0.00017145077,0.0012344273,0.00002167687,0.0000048212432,0.00000325348,0.00002318071,0.000029250452,0.0004128818],"genre_scores_gemma":[0.99906856,0.00008056439,0.00054105086,0.0000072099533,0.0000030972117,0.000002056203,0.000026589976,0.0000054833645,0.00026548613],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999341,0.000005997235,0.0000039313463,0.000010404566,0.00002798286,0.000017559993],"domain_scores_gemma":[0.99982315,0.00004031683,0.00006476561,0.000017132774,0.00004064525,0.000014013479],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00008594564,0.00013271882,0.00007790713,0.00010916839,0.000115031944,0.0001971918,0.00016415806,0.00009877666,0.0006478723],"category_scores_gemma":[0.00034991212,0.00007665215,0.000049000468,0.00008985045,0.00009113663,0.00017889145,0.00007539962,0.00011789986,0.000093116],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000049749826,0.000011187878,0.0011899535,0.000010110549,0.0000035599091,0.000038561117,0.000016979378,0.0009560798,0.9949137,0.00012823059,0.000029187426,0.0026528435],"study_design_scores_gemma":[0.00000550824,0.00019396543,0.005767461,0.000001999108,0.000010346839,0.000110716595,0.000025611458,0.006407899,0.9870432,0.000043636122,0.00038616554,0.0000033516103],"about_ca_topic_score_codex":0.00040164162,"about_ca_topic_score_gemma":0.0009854161,"teacher_disagreement_score":0.0006478723,"about_ca_system_score_codex":0.00015328443,"about_ca_system_score_gemma":0.000094157745,"threshold_uncertainty_score":0.002167344},"labels":[],"label_agreement":null},{"id":"W2076808510","doi":"10.1116/1.1784826","title":"Sub-100°C a-Si:H thin-film transistors on plastic substrates with silicon nitride gate dielectrics","year":2004,"lang":"en","type":"article","venue":"Journal of Vacuum Science & Technology A Vacuum Surfaces and Films","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":27,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Materials science; Plasma-enhanced chemical vapor deposition; Thin-film transistor; Optoelectronics; Substrate (aquarium); Fabrication; Dielectric; Silicon nitride; Transistor; Silicon; Chemical vapor deposition; Threshold voltage; Nanotechnology; Electrical engineering; Voltage; Layer (electronics)","score_opus":0.007401850296839678,"score_gpt":0.2002967506760657,"score_spread":0.19289490037922602,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2076808510","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9955422,0.00040369973,0.0016720103,0.000026049915,0.000018581046,0.000014991984,0.0001904024,0.000081161925,0.002050911],"genre_scores_gemma":[0.99403054,0.00042123583,0.0033957828,0.000021194928,0.000006745213,0.000023512994,0.00023871237,0.000016286725,0.0018459918],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999316,0.0000029152422,0.000004179828,0.00001498974,0.000025201485,0.000021138238],"domain_scores_gemma":[0.9999399,0.000017121312,0.000014249079,0.000009724982,0.000010219461,0.000008688617],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00005542282,0.0001791921,0.00013330874,0.00012591972,0.00011978861,0.00018796186,0.00023237111,0.00011521922,0.0009998926],"category_scores_gemma":[0.0001065807,0.000098848366,0.000083943516,0.00018033192,0.00014649832,0.00017890664,0.000105036714,0.00015633972,0.00035971383],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000034269146,0.0000058657242,0.0002450887,0.000025025669,0.0000034699217,0.000043383272,0.000014011057,0.00017043098,0.9983175,0.00007269225,0.00006513718,0.0010031871],"study_design_scores_gemma":[0.000007054779,0.00006852718,0.0036676424,0.000002694607,0.0000078365765,0.0000837233,0.000019879504,0.0012869234,0.9930848,0.000050676204,0.0017163963,0.000003839599],"about_ca_topic_score_codex":0.0017329934,"about_ca_topic_score_gemma":0.004302118,"teacher_disagreement_score":0.0017329934,"about_ca_system_score_codex":0.0003374369,"about_ca_system_score_gemma":0.00012904957,"threshold_uncertainty_score":0.0034458637},"labels":[],"label_agreement":null},{"id":"W2077114549","doi":"10.1063/1.1811385","title":"Low dark current and blue enhanced a-Si:H∕a-SiC:H heterojunction n-i-δi-p photodiode for imaging applications","year":2004,"lang":"en","type":"article","venue":"Journal of Applied Physics","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":15,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Dark current; Photodiode; Photocurrent; Heterojunction; Optoelectronics; Materials science; Responsivity; Photoconductivity; Current density; Carrier lifetime; Wavelength; Photodetector; Silicon; Physics","score_opus":0.008055539434830948,"score_gpt":0.22063271875885992,"score_spread":0.21257717932402898,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2077114549","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9856257,0.0006005398,0.010411278,0.000068430425,0.000018890289,0.000021638354,0.00013858013,0.00014963435,0.002965306],"genre_scores_gemma":[0.98722154,0.00019008457,0.009335653,0.000037499365,0.000008296268,0.000014979768,0.00012212059,0.000014674154,0.0030552694],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999156,0.000008596376,0.0000038693065,0.000022278298,0.00003843333,0.000011338497],"domain_scores_gemma":[0.9999291,0.000012944922,0.000010014534,0.000008913212,0.000025591744,0.0000133809535],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00011167343,0.00019537398,0.00013426437,0.000118784905,0.00010825118,0.00021922853,0.00039737503,0.00033849716,0.00075378374],"category_scores_gemma":[0.00013314665,0.0001275424,0.000105329185,0.00010336969,0.00016129507,0.00023397962,0.00012935708,0.00023858719,0.00024473606],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000018469804,0.000007973828,0.0002880299,0.000015882748,0.000002619995,0.00006384561,0.000009033272,0.00003564962,0.99792385,0.00007332015,0.000048360645,0.0015128884],"study_design_scores_gemma":[0.000009016275,0.00016838843,0.0061563132,0.0000030481697,0.000010933691,0.00061129115,0.000017481354,0.0013944238,0.9906282,0.000056507026,0.00093924813,0.0000051061406],"about_ca_topic_score_codex":0.00027143862,"about_ca_topic_score_gemma":0.00082976196,"teacher_disagreement_score":0.00075378374,"about_ca_system_score_codex":0.0001487681,"about_ca_system_score_gemma":0.000101348305,"threshold_uncertainty_score":0.0025216937},"labels":[],"label_agreement":null},{"id":"W2077194675","doi":"10.1109/am-fpd.2014.6867116","title":"Heterogeneously integrated nanowires and thin films for flexible electronics","year":2014,"lang":"en","type":"article","venue":"","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Materials science; Thin-film transistor; Nanowire; Thin film; Bending; Optoelectronics; Transistor; Flexible electronics; Planar; Light scattering; Scattering; Nanotechnology; Composite material; Optics; Electrical engineering; Layer (electronics); Computer science","score_opus":0.007345212198333089,"score_gpt":0.1962341033936148,"score_spread":0.1888888911952817,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2077194675","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9427725,0.006261016,0.043674797,0.00013202101,0.00015410905,0.000043555097,0.00032706506,0.0002464253,0.006388505],"genre_scores_gemma":[0.97643423,0.001705282,0.018421052,0.000048355618,0.000024562452,0.000027676713,0.0002508665,0.000028447683,0.0030594266],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99994934,0.000004481901,0.0000030930382,0.00001560539,0.000019060135,0.0000083657105],"domain_scores_gemma":[0.99997175,0.0000070399165,0.0000056436543,0.0000048432976,0.0000065625686,0.0000042659203],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00006808811,0.00015608055,0.00011112095,0.00011078292,0.00006811357,0.00024275697,0.00018182628,0.00025535215,0.000532533],"category_scores_gemma":[0.000088506094,0.00012462675,0.00011213419,0.00011353559,0.0000853369,0.00021011216,0.0001512701,0.00027558557,0.00024748736],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000007282031,0.0000059223958,0.00005027118,0.00001588109,0.0000025120562,0.00002007989,0.000002993006,0.0002143604,0.9973641,0.0002178684,0.00003389821,0.0020649065],"study_design_scores_gemma":[0.0000065583763,0.00009359694,0.00060086016,0.0000049477944,0.000009342441,0.0000749763,0.000009816543,0.00434864,0.99188995,0.00018056274,0.0027765348,0.000004219926],"about_ca_topic_score_codex":0.00023097754,"about_ca_topic_score_gemma":0.0005941658,"teacher_disagreement_score":0.000532533,"about_ca_system_score_codex":0.00014720883,"about_ca_system_score_gemma":0.00005352256,"threshold_uncertainty_score":0.0017815232},"labels":[],"label_agreement":null},{"id":"W2077287058","doi":"10.1063/1.3089572","title":"High mobility organic thin film transistors based on monocrystalline rubrene films grown by low pressure hot wall deposition","year":2009,"lang":"en","type":"article","venue":"Applied Physics Letters","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":30,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McGill University","funders":"","keywords":"Rubrene; Crystallinity; Thin film; Materials science; Deposition (geology); Monocrystalline silicon; Thin-film transistor; Chemical vapor deposition; Optoelectronics; Organic semiconductor; Carbon film; Silicon; Nanotechnology; Layer (electronics); Composite material","score_opus":0.0039722797230781785,"score_gpt":0.16274650642422753,"score_spread":0.15877422670114935,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2077287058","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9842799,0.002385409,0.0076698344,0.00008710394,0.000040105482,0.00007182152,0.00045323564,0.00026612863,0.0047463914],"genre_scores_gemma":[0.97390556,0.0021860034,0.01900193,0.000031240837,0.000026205858,0.000050241764,0.00032276683,0.000043973694,0.0044320803],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998839,0.000006393237,0.0000063535535,0.00002435912,0.00005246648,0.000026577436],"domain_scores_gemma":[0.9998691,0.00004592399,0.000031346157,0.000017864573,0.000021033838,0.000014798562],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00011709898,0.00025296432,0.00030546336,0.0002357882,0.00016322469,0.00032064045,0.00053854997,0.00020896377,0.0012612201],"category_scores_gemma":[0.0002345541,0.00022750776,0.00015474507,0.00022931576,0.00017291021,0.00037763806,0.00020753355,0.0002713579,0.00039205464],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000013438671,0.0000053101144,0.000044694523,0.00003673622,0.0000028412805,0.000044066775,0.000007792889,0.000029262563,0.9988237,0.000058341702,0.000031465574,0.0009023511],"study_design_scores_gemma":[0.000019049601,0.00015172779,0.0018627451,0.000004369657,0.00001326043,0.00020275672,0.00001364472,0.0008080511,0.99534947,0.00004199152,0.0015271923,0.0000056036606],"about_ca_topic_score_codex":0.001056556,"about_ca_topic_score_gemma":0.003174778,"teacher_disagreement_score":0.0012612201,"about_ca_system_score_codex":0.00027527858,"about_ca_system_score_gemma":0.00015469594,"threshold_uncertainty_score":0.004219234},"labels":[],"label_agreement":null},{"id":"W2077429558","doi":"10.1109/ipcon.2012.6358720","title":"A novel 4-TFT pixel circuit with threshold voltage compensation for AMOLED displays","year":2012,"lang":"en","type":"article","venue":"","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":2,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"AMOLED; Capacitor; Thin-film transistor; Pixel; OLED; Diode; Threshold voltage; Optoelectronics; Electrical engineering; Compensation (psychology); Transistor; Computer science; Voltage; Materials science; Active matrix; Electrode; Physics; Engineering; Artificial intelligence; Nanotechnology","score_opus":0.02494305037136584,"score_gpt":0.2094838954197279,"score_spread":0.18454084504836205,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2077429558","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.36644313,0.0031708237,0.6062553,0.0011515608,0.0009935574,0.00029695514,0.0007168563,0.008553304,0.012418581],"genre_scores_gemma":[0.84948164,0.0005394473,0.14237146,0.00047877966,0.0001892174,0.0000889402,0.00020104724,0.0000825311,0.0065669115],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99987316,0.0000123635555,0.000007343077,0.00003383328,0.0000480399,0.00002524167],"domain_scores_gemma":[0.99984634,0.000029876448,0.000019476567,0.00001696552,0.000068105204,0.000019317225],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00011397742,0.00028560206,0.0003422132,0.00028078008,0.0003784892,0.00048800133,0.0018348441,0.0007936641,0.0038360949],"category_scores_gemma":[0.00022305558,0.00019734545,0.00028205774,0.0003691572,0.00015854232,0.0007072425,0.00018179162,0.00032056315,0.0006682341],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00036064594,0.000087882436,0.00068553083,0.00029249815,0.00008526831,0.00038272995,0.00007633509,0.002818073,0.9162449,0.003808831,0.0041286615,0.07102859],"study_design_scores_gemma":[0.000109420725,0.0011144662,0.002361028,0.000043427543,0.00019286566,0.002053156,0.000041870495,0.1243814,0.83693945,0.0010761984,0.031624332,0.00006246782],"about_ca_topic_score_codex":0.0010619937,"about_ca_topic_score_gemma":0.0016231139,"teacher_disagreement_score":0.0038360949,"about_ca_system_score_codex":0.0006471642,"about_ca_system_score_gemma":0.00039714648,"threshold_uncertainty_score":0.012832999},"labels":[],"label_agreement":null},{"id":"W2078526275","doi":"10.1109/pvsc.2013.6744504","title":"Optical characterization of selectively transparent and conducting photonic crystals for use in thin crystalline silicon photovoltaics","year":2013,"lang":"en","type":"article","venue":"","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McMaster University; University of Toronto","funders":"","keywords":"Materials science; Silicon; Reflector (photography); Photovoltaics; Photocurrent; Optoelectronics; Crystalline silicon; Absorption (acoustics); Layer (electronics); Reflection (computer programming); Photonic crystal; Optics; Aluminium; Photovoltaic system; Nanotechnology; Composite material","score_opus":0.04854945069885193,"score_gpt":0.23501524302070725,"score_spread":0.18646579232185534,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2078526275","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99607384,0.00030679093,0.0020098735,0.000016386064,0.0000058917753,0.000018191507,0.00021151976,0.00002607812,0.0013313579],"genre_scores_gemma":[0.9933903,0.00044647194,0.005072898,0.000011047367,0.0000037153054,0.000030370311,0.00024542716,0.00001718877,0.00078270433],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998307,0.000014035332,0.000011112999,0.00002404835,0.000087812405,0.000032194243],"domain_scores_gemma":[0.9997118,0.00010667796,0.000065795124,0.00002224788,0.00007425061,0.00001921613],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00022375297,0.0002521045,0.00017532028,0.00021378337,0.00017498092,0.00033146818,0.00023925511,0.00029075067,0.00058650173],"category_scores_gemma":[0.0004359444,0.00015108284,0.00023861654,0.00021583888,0.00020609109,0.00016567457,0.00013153329,0.0003223511,0.00019837666],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0000150756505,0.000007640165,0.00016381149,0.000021438756,0.0000027123144,0.00003473296,0.000010984916,0.0002489494,0.9989704,0.00004873023,0.000011337171,0.00046416084],"study_design_scores_gemma":[0.0000026376879,0.000086214415,0.001144008,0.000002242256,0.0000062195254,0.000048837755,0.000019575264,0.0012959861,0.9971545,0.000011656819,0.00022539168,0.0000028400077],"about_ca_topic_score_codex":0.00164582,"about_ca_topic_score_gemma":0.0018376757,"teacher_disagreement_score":0.00164582,"about_ca_system_score_codex":0.00027515396,"about_ca_system_score_gemma":0.00033039768,"threshold_uncertainty_score":0.0032724738},"labels":[],"label_agreement":null},{"id":"W2080005809","doi":"10.1109/led.2013.2295976","title":"Low Dark Current Amorphous Silicon Metal-Semiconductor-Metal Photodetector for Digital Imaging Applications","year":2014,"lang":"en","type":"article","venue":"IEEE Electron Device Letters","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":29,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Photodetector; Dark current; Photodiode; Optoelectronics; Materials science; Silicon; Amorphous silicon; Organic semiconductor; Quantum efficiency; Semiconductor; Crystalline silicon","score_opus":0.006868577498681653,"score_gpt":0.21506654099875686,"score_spread":0.2081979635000752,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2080005809","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.74890536,0.005341728,0.212591,0.00074930314,0.00017962235,0.00013693582,0.0012013824,0.0039949613,0.026899658],"genre_scores_gemma":[0.9040174,0.0009448173,0.0861164,0.00027667172,0.000053235533,0.00004760053,0.00029996995,0.000048408216,0.008195528],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99990046,0.000011703041,0.0000053998606,0.000025687497,0.000044548087,0.000012168448],"domain_scores_gemma":[0.9998896,0.000031208725,0.00002160211,0.000012244856,0.000032020984,0.000013265908],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00012761976,0.00020753611,0.00018674195,0.00019854621,0.00021535004,0.00043954892,0.0006550405,0.00036783263,0.0021168937],"category_scores_gemma":[0.00017363022,0.000115642004,0.00014453869,0.00034680546,0.00014053639,0.00037878501,0.00025964744,0.00023889609,0.00092929637],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00008418224,0.000039762675,0.0008829815,0.00010192232,0.000015536783,0.00010984881,0.000020311381,0.0002527389,0.9741668,0.0018117606,0.001218983,0.021295106],"study_design_scores_gemma":[0.000021875247,0.00034488767,0.0024588788,0.0000182227,0.000039446742,0.0007585015,0.000030359855,0.0150089525,0.96859866,0.00044353367,0.012261655,0.000015024532],"about_ca_topic_score_codex":0.00024640618,"about_ca_topic_score_gemma":0.0011860721,"teacher_disagreement_score":0.0021168937,"about_ca_system_score_codex":0.00024051787,"about_ca_system_score_gemma":0.00026731202,"threshold_uncertainty_score":0.0070816875},"labels":[],"label_agreement":null},{"id":"W2080609340","doi":"10.1063/1.1801673","title":"All jet-printed polymer thin-film transistor active-matrix backplanes","year":2004,"lang":"en","type":"article","venue":"Applied Physics Letters","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":272,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Xerox (Canada)","funders":"","keywords":"Thin-film transistor; Active matrix; Backplane; Materials science; Optoelectronics; Transistor; Thin film; Flexible display; Electron mobility; Printed electronics; Nanotechnology; Inkwell; Computer science; Composite material; Electrical engineering; Voltage","score_opus":0.009219409705285992,"score_gpt":0.202711248461089,"score_spread":0.19349183875580303,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2080609340","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.8945003,0.003676077,0.067975365,0.0002695665,0.0006934594,0.000103407416,0.0013879342,0.0036498944,0.0277439],"genre_scores_gemma":[0.9229695,0.0023632003,0.05485136,0.00010864217,0.00007116222,0.000056102133,0.0007648741,0.0002661811,0.018548908],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998814,0.0000048427537,0.0000073246792,0.000022931848,0.00006601505,0.00001748711],"domain_scores_gemma":[0.9998779,0.000027069025,0.000026143436,0.000029018012,0.00002549665,0.000014413288],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00006671474,0.00037216852,0.00026130688,0.00021016544,0.00020587034,0.000538073,0.0004300349,0.00021317902,0.003666634],"category_scores_gemma":[0.00018259489,0.00019204979,0.00020473868,0.00018214052,0.00015858283,0.00033236083,0.00019649246,0.00042116962,0.0012754654],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00003789397,0.000010315114,0.00008002889,0.000053481326,0.000004073053,0.000114772294,0.000013783534,0.00012551039,0.9929259,0.00023873175,0.00024623686,0.006149385],"study_design_scores_gemma":[0.0000062177014,0.00005677678,0.000276716,0.0000026520534,0.0000054633542,0.00012575391,0.0000043675373,0.00073597865,0.99595827,0.000039956216,0.0027852203,0.0000027080432],"about_ca_topic_score_codex":0.00036092606,"about_ca_topic_score_gemma":0.00053723337,"teacher_disagreement_score":0.003666634,"about_ca_system_score_codex":0.00018629167,"about_ca_system_score_gemma":0.00012240233,"threshold_uncertainty_score":0.012266159},"labels":[],"label_agreement":null},{"id":"W2081228463","doi":"10.1063/1.2776223","title":"Avalanche multiplication phenomenon in amorphous semiconductors: Amorphous selenium versus hydrogenated amorphous silicon","year":2007,"lang":"en","type":"article","venue":"Journal of Applied Physics","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":61,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Saskatchewan; Health Sciences Centre; Sunnybrook Health Science Centre","funders":"","keywords":"Impact ionization; Amorphous silicon; Semiconductor; Amorphous solid; Materials science; Ionization; Silicon; Optoelectronics; Engineering physics; Condensed matter physics; Chemistry; Physics; Crystalline silicon; Crystallography; Ion","score_opus":0.014190615923385455,"score_gpt":0.21803233641813838,"score_spread":0.2038417204947529,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2081228463","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9796417,0.002297966,0.009132591,0.00015812533,0.000051746214,0.000021924918,0.00005558095,0.00006881007,0.008571588],"genre_scores_gemma":[0.9973054,0.0004903291,0.0011753587,0.00001735736,0.000010577809,0.000005411228,0.00001904616,0.000004050921,0.0009725193],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999541,0.000004366207,0.000002266308,0.000011616467,0.000017948578,0.000009683048],"domain_scores_gemma":[0.99990654,0.000050391445,0.000013152316,0.0000067556684,0.000014060083,0.00000913885],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00010174891,0.00018960929,0.00016875507,0.00031085877,0.00019713613,0.00038175474,0.00028169385,0.0003203508,0.0013904162],"category_scores_gemma":[0.00019222568,0.00010136715,0.00012561174,0.0001994627,0.00046344104,0.00042749004,0.0002635751,0.00032037738,0.00014846004],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00023586539,0.00004728045,0.0010601595,0.00014229422,0.000019396459,0.0014429573,0.00032983365,0.0018459208,0.9645342,0.02392262,0.00021171589,0.0062078284],"study_design_scores_gemma":[0.00010195271,0.00078964006,0.008617168,0.000055257813,0.00004785797,0.00226684,0.00046750213,0.082429595,0.88260174,0.017823627,0.0047575724,0.000041233732],"about_ca_topic_score_codex":0.00032361722,"about_ca_topic_score_gemma":0.0002907504,"teacher_disagreement_score":0.0013904162,"about_ca_system_score_codex":0.0002089309,"about_ca_system_score_gemma":0.00008262407,"threshold_uncertainty_score":0.0046514273},"labels":[],"label_agreement":null},{"id":"W2081381340","doi":"10.1063/1.2831495","title":"Hydrogen effusion from tritiated amorphous silicon","year":2008,"lang":"en","type":"article","venue":"Journal of Applied Physics","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":16,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Toronto","funders":"","keywords":"Tritium; Outgassing; Hydrogen; Chemistry; Tritiated water; Residual gas analyzer; Analytical Chemistry (journal); Radiochemistry; Substrate (aquarium); Desorption; Materials science; Adsorption; Mass spectrometry; Nuclear physics; Chromatography","score_opus":0.011829951323276562,"score_gpt":0.1819538712622482,"score_spread":0.17012391993897166,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2081381340","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99831736,0.00049296184,0.000682607,0.000009731607,0.000004658961,0.000004753275,0.00011403205,0.000019986668,0.00035396623],"genre_scores_gemma":[0.99742645,0.00041613425,0.0008409908,0.000008336379,0.0000032650619,0.000005889758,0.000372946,0.000019435527,0.0009064883],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99987566,0.000012329393,0.000009003205,0.000030787658,0.000042278723,0.000029832254],"domain_scores_gemma":[0.99985874,0.000059228245,0.00002381899,0.000018873485,0.000023269931,0.00001608455],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000136286,0.00025765193,0.00031900554,0.00018978599,0.00018109404,0.00026655334,0.0002390843,0.00019116353,0.0010576532],"category_scores_gemma":[0.0002266335,0.00011144152,0.00019084738,0.0002757007,0.00020638645,0.0002465862,0.00023607051,0.000233904,0.00016145279],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000059480997,0.0000055874852,0.0002765932,0.000035139034,0.000005843796,0.00005875176,0.000031836364,0.000065478285,0.9986896,0.000014578947,0.00000926492,0.0007478105],"study_design_scores_gemma":[0.000004612346,0.000109137894,0.001811287,0.0000018641055,0.000006662192,0.00008598695,0.000017401018,0.0003710945,0.99721706,0.000007789412,0.00036398385,0.0000030046558],"about_ca_topic_score_codex":0.00075433665,"about_ca_topic_score_gemma":0.0007530561,"teacher_disagreement_score":0.0010576532,"about_ca_system_score_codex":0.00018331692,"about_ca_system_score_gemma":0.00009616126,"threshold_uncertainty_score":0.0035381913},"labels":[],"label_agreement":null},{"id":"W2082148573","doi":"10.1364/oe.19.017040","title":"Selectively transparent and conducting photonic crystal rear-contacts for thin-film silicon-based building integrated photovoltaics","year":2011,"lang":"en","type":"article","venue":"Optics Express","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":27,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Toronto","funders":"","keywords":"Building-integrated photovoltaics; Photovoltaics; Materials science; Optics; Photonic crystal; Optoelectronics; Silicon; Solar cell; Photovoltaic system; Photonics; Electrical engineering; Physics","score_opus":0.05524061116600484,"score_gpt":0.242596798490792,"score_spread":0.18735618732478715,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2082148573","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.96620184,0.0010674901,0.023587888,0.00014211687,0.00007635001,0.000044174176,0.00027366352,0.00027609756,0.008330363],"genre_scores_gemma":[0.98782504,0.00042580755,0.010406476,0.000015389604,0.000009873553,0.000023986933,0.00009860121,0.000028827368,0.0011660425],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998154,0.000010966876,0.000007149402,0.000023658991,0.00011374058,0.000029124238],"domain_scores_gemma":[0.99988675,0.00003065589,0.00002602017,0.00001402076,0.000034545992,0.000007980154],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00010875837,0.00024827555,0.00020293683,0.00018403183,0.00029454852,0.0005424579,0.00034181945,0.00035019094,0.000799616],"category_scores_gemma":[0.00022369089,0.00020851477,0.00021860567,0.00021317945,0.00021907035,0.00028068663,0.00017591205,0.00043197707,0.0004500186],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000013933051,0.000006304409,0.00009824319,0.000028055438,0.000002085753,0.00005236809,0.000009714563,0.0004028103,0.9979565,0.00028229097,0.00006168846,0.0010859726],"study_design_scores_gemma":[0.0000048356824,0.000035441506,0.00040911615,0.0000022352324,0.0000049591745,0.00007748818,0.000012110063,0.004883464,0.99379224,0.00007119754,0.00070323615,0.0000036155332],"about_ca_topic_score_codex":0.0008914129,"about_ca_topic_score_gemma":0.0022992983,"teacher_disagreement_score":0.0008914129,"about_ca_system_score_codex":0.00035414367,"about_ca_system_score_gemma":0.00035477252,"threshold_uncertainty_score":0.0026749969},"labels":[],"label_agreement":null},{"id":"W2082175505","doi":"10.1557/proc-1074-i05-35","title":"High-mobility Nanocrystalline Indium Oxide TFTs with Silicon Nitride Gate Dielectric","year":2008,"lang":"en","type":"article","venue":"MRS Proceedings","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Materials science; Thin-film transistor; Optoelectronics; Plasma-enhanced chemical vapor deposition; Gate dielectric; Oxide thin-film transistor; Dielectric; Threshold voltage; Silicon nitride; Silicon oxide; Chemical vapor deposition; Nanocrystalline silicon; Nanocrystalline material; Silicon; Amorphous silicon; Transistor; Nanotechnology; Crystalline silicon; Electrical engineering; Voltage; Layer (electronics)","score_opus":0.007202091540202441,"score_gpt":0.16873202435326395,"score_spread":0.16152993281306152,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2082175505","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9939678,0.00071762974,0.0025745244,0.00014298288,0.00006515615,0.000011943323,0.00013997206,0.00012038828,0.0022596216],"genre_scores_gemma":[0.9937336,0.00029305439,0.0037373537,0.0000348635,0.000024329966,0.000013194523,0.0001262868,0.000023002418,0.0020143571],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999238,0.0000042878382,0.000004611762,0.000020434605,0.000028223083,0.000018581575],"domain_scores_gemma":[0.99985456,0.000034388944,0.000025234776,0.000027960254,0.0000350654,0.00002270163],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00012965061,0.0001392425,0.00029594693,0.000096374424,0.0002046495,0.00028910654,0.00049583695,0.00023723663,0.00075276825],"category_scores_gemma":[0.00031272758,0.000138303,0.000078107376,0.0001376994,0.00013231498,0.00048158638,0.00015426023,0.00017858775,0.00027271826],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00008693837,0.000006870073,0.00025922354,0.000023883238,0.000005130869,0.00008455738,0.000026698312,0.00008932258,0.99793494,0.00017208695,0.00024272107,0.0010676362],"study_design_scores_gemma":[0.000039254428,0.00020136569,0.0027372963,0.0000074772056,0.000024199084,0.00032557358,0.000047997655,0.0054118237,0.98857075,0.00016255928,0.0024631005,0.00000864489],"about_ca_topic_score_codex":0.0020633119,"about_ca_topic_score_gemma":0.0062836073,"teacher_disagreement_score":0.0020633119,"about_ca_system_score_codex":0.00059768785,"about_ca_system_score_gemma":0.00024828003,"threshold_uncertainty_score":0.004336536},"labels":[],"label_agreement":null},{"id":"W2082355442","doi":"10.1109/isscc.2010.5434027","title":"Stable RGBW AMOLED display with OLED degradation compensation using electrical feedback","year":2010,"lang":"en","type":"article","venue":"","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":30,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"IGNIS Innovation (Canada)","funders":"","keywords":"AMOLED; OLED; Degradation (telecommunications); Compensation (psychology); Materials science; Computer science; Process (computing); Optoelectronics; Computer hardware; Active matrix; Thin-film transistor; Nanotechnology; Telecommunications","score_opus":0.009533415015050508,"score_gpt":0.20101306967843852,"score_spread":0.191479654663388,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2082355442","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.86419183,0.000804215,0.12649244,0.0005831547,0.00011304124,0.000084272964,0.00021559912,0.0016199941,0.005895462],"genre_scores_gemma":[0.93196017,0.00022286181,0.064828575,0.00014330387,0.00004736195,0.00005469324,0.00007040239,0.000089809844,0.0025828653],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99979585,0.000021261536,0.000009031577,0.000053090287,0.000097725315,0.000023078628],"domain_scores_gemma":[0.99980193,0.000050093575,0.000050504717,0.000039227696,0.000039632232,0.0000185406],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0001940238,0.00021969934,0.00022199878,0.00021370572,0.00023561699,0.00035594316,0.00062384567,0.0005047979,0.0009128563],"category_scores_gemma":[0.0005068492,0.00019607511,0.00013597641,0.00019695333,0.0002924443,0.00048224232,0.00028771494,0.0004122346,0.00031519402],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00007759974,0.000021582173,0.0002817004,0.000025601006,0.0000036082085,0.000062305415,0.000026062806,0.00015430123,0.9898608,0.00023932946,0.00015209253,0.00909493],"study_design_scores_gemma":[0.0000319178,0.00022354422,0.002536505,0.000007877113,0.000010785729,0.00042770043,0.000009019947,0.0077635557,0.9866392,0.0001539499,0.0021780867,0.00001789431],"about_ca_topic_score_codex":0.00041452234,"about_ca_topic_score_gemma":0.000472426,"teacher_disagreement_score":0.0009128563,"about_ca_system_score_codex":0.00023410324,"about_ca_system_score_gemma":0.0001524219,"threshold_uncertainty_score":0.0030537844},"labels":[],"label_agreement":null},{"id":"W2082360686","doi":"10.1002/pssa.200790012","title":"Review Article: Hydrogen blistering of silicon: Progress in fundamental understanding","year":2007,"lang":"en","type":"article","venue":"physica status solidi (a)","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":true,"ca_institutions":"Institut National de la Recherche Scientifique","funders":"","keywords":"Microelectronics; Nanotechnology; Engineering physics; Silicon; Materials science; Silicon on insulator; Wafer; Telecommunications; Optoelectronics; Engineering","score_opus":0.03300053291346072,"score_gpt":0.27610164350968575,"score_spread":0.24310111059622502,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2082360686","genre_codex":"review","genre_gemma":"review","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"review","genre_consensus":"review","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.00047732863,0.9590851,0.0003516955,0.0064538573,0.031528693,0.0000142681865,0.000060035753,0.000023473503,0.002005566],"genre_scores_gemma":[0.0034756525,0.9381901,0.0003211626,0.0056377975,0.047706142,0.00001309818,0.000120525714,0.000013484543,0.0045220735],"study_design_codex":"not_applicable","study_design_gemma":"not_applicable","domain_scores_codex":[0.999647,0.000045221972,0.000041810883,0.00009201645,0.00013437076,0.000039435254],"domain_scores_gemma":[0.9990988,0.00029537085,0.00008178392,0.00002170028,0.0003508432,0.0001514208],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0007588302,0.0012539536,0.0015864152,0.0012357474,0.00046694084,0.001441006,0.0015343283,0.002488947,0.006050197],"category_scores_gemma":[0.001151285,0.0002550446,0.00030280073,0.0018531485,0.0008071247,0.0024116302,0.00063194684,0.0021491272,0.004333779],"study_design_candidate":"not_applicable","study_design_consensus":"not_applicable","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00030199214,0.0000871549,0.00017114102,0.012262738,0.00006181688,0.0007087045,0.00011843281,0.00034761865,0.0058378954,0.0032920928,0.65414864,0.3226617],"study_design_scores_gemma":[0.000022076389,0.000115744384,0.0003030481,0.00065576256,0.000039071354,0.001185604,0.0000748633,0.00009755238,0.0014579361,0.0014957568,0.994534,0.000018605544],"about_ca_topic_score_codex":0.0004592026,"about_ca_topic_score_gemma":0.0007340904,"teacher_disagreement_score":0.006050197,"about_ca_system_score_codex":0.00079133693,"about_ca_system_score_gemma":0.000831716,"threshold_uncertainty_score":0.02023995},"labels":[],"label_agreement":null},{"id":"W2082899833","doi":"10.1039/c2cp43475j","title":"Cu nanoparticles enable plasmonic-improved silicon photovoltaic devices","year":2012,"lang":"en","type":"article","venue":"Physical Chemistry Chemical Physics","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":17,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Victoria","funders":"Natural Sciences and Engineering Research Council of Canada; Foreign Affairs and International Trade Canada; Conselho Nacional de Desenvolvimento Científico e Tecnológico","keywords":"Photovoltaic system; Plasmon; Silicon; Nanoparticle; Nanotechnology; Plasmonic nanoparticles; Materials science; Optoelectronics; Engineering physics; Engineering; Electrical engineering","score_opus":0.010720214058756847,"score_gpt":0.20708086360063166,"score_spread":0.19636064954187482,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2082899833","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9645626,0.004381223,0.02264355,0.0002695489,0.00012644532,0.000036954778,0.0001483804,0.0007934898,0.007037722],"genre_scores_gemma":[0.9870079,0.0009672271,0.009131333,0.000055242803,0.00002436856,0.0000134121265,0.00007774601,0.000035845605,0.002686952],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998659,0.000016859995,0.0000081351045,0.000040978208,0.000037722933,0.000030502093],"domain_scores_gemma":[0.99993503,0.00002089503,0.000012409778,0.0000070660376,0.000017541595,0.0000070431165],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00010882871,0.00022950057,0.000210614,0.00013801923,0.00012706096,0.00042773274,0.00028218736,0.0004361003,0.00074143696],"category_scores_gemma":[0.00020683858,0.00014904127,0.0001867651,0.00015489358,0.00016448348,0.0002987794,0.0002619135,0.0003210185,0.0003120703],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00003106124,0.00002166041,0.00009278428,0.00006222912,0.0000069500993,0.000041072024,0.000017775143,0.00045567568,0.9905296,0.0002683082,0.00028061695,0.008192277],"study_design_scores_gemma":[0.000004277198,0.00006841951,0.0003548735,0.0000027452315,0.00000760158,0.000050482355,0.000007348961,0.0034275085,0.9942667,0.00005718605,0.0017500651,0.0000028770821],"about_ca_topic_score_codex":0.00034345518,"about_ca_topic_score_gemma":0.0007272034,"teacher_disagreement_score":0.00074143696,"about_ca_system_score_codex":0.00032774705,"about_ca_system_score_gemma":0.0000675905,"threshold_uncertainty_score":0.002480328},"labels":[],"label_agreement":null},{"id":"W2083541479","doi":"10.1139/p03-101","title":"Influence de la température de substrat sur la croissance et les propriétés des films minces de silicium amorphe déposés par pulvérisation cathodique","year":2003,"lang":"en","type":"article","venue":"Canadian Journal of Physics","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":false,"route_ca_venue":true,"route_about_ca":false,"ca_institutions":"","funders":"","keywords":"Substrate (aquarium); Thin film; Physics; Analytical Chemistry (journal); Hydrogen; Deposition (geology); Chemistry","score_opus":0.010382433816458597,"score_gpt":0.2240635988652123,"score_spread":0.2136811650487537,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2083541479","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9973909,0.0010223215,0.0008182828,0.000035968027,0.000014623277,0.0000059938766,0.00006433672,0.00002251597,0.0006250212],"genre_scores_gemma":[0.9971137,0.00070380425,0.0010956096,0.000017161236,0.0000106884045,0.0000120572,0.000112503476,0.0000291672,0.00090527505],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998543,0.000014760962,0.000010237168,0.000047750098,0.000042865282,0.000030003433],"domain_scores_gemma":[0.9994455,0.00028226333,0.00011179889,0.000052554875,0.000077661665,0.000030238094],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00022492686,0.00027275388,0.0002545893,0.00017178616,0.00019062769,0.0005618248,0.0002608429,0.00034506546,0.0013559666],"category_scores_gemma":[0.0007130529,0.00035040002,0.00020831208,0.00016077254,0.00038055508,0.0003723231,0.00014907938,0.0004380245,0.0002343929],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000114665454,0.000007084367,0.00030780383,0.00003210018,0.000009385611,0.000054642587,0.000032595613,0.00018613637,0.99843186,0.000036470487,0.000013559315,0.00077370217],"study_design_scores_gemma":[0.000011875344,0.00017041099,0.0032572101,0.0000034417008,0.000013997861,0.00005324008,0.000017142052,0.0007364413,0.9953505,0.000015010153,0.00036585648,0.0000048728602],"about_ca_topic_score_codex":0.0011567633,"about_ca_topic_score_gemma":0.0015878938,"teacher_disagreement_score":0.0013559666,"about_ca_system_score_codex":0.0002949487,"about_ca_system_score_gemma":0.00017784092,"threshold_uncertainty_score":0.0045362115},"labels":[],"label_agreement":null},{"id":"W2083969468","doi":"10.1063/1.2803890","title":"Time evolution of charged defect states in tritiated amorphous silicon","year":2007,"lang":"en","type":"article","venue":"Journal of Applied Physics","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Toronto","funders":"","keywords":"Dangling bond; Amorphous silicon; Annealing (glass); Amorphous solid; Materials science; Analytical Chemistry (journal); Silicon; Activation energy; Chemistry; Crystallography; Crystalline silicon; Physical chemistry; Optoelectronics","score_opus":0.0058059500335555245,"score_gpt":0.19178893665712374,"score_spread":0.1859829866235682,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2083969468","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.998159,0.0002272957,0.0010838312,0.0000131068355,0.0000055757464,0.0000054859897,0.000099245786,0.000031898566,0.0003745036],"genre_scores_gemma":[0.99877995,0.0001058152,0.0005958117,0.000007849787,0.000002556837,0.0000057741,0.00009954818,0.0000062392783,0.00039644257],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999206,0.0000066730213,0.0000037736058,0.000020616308,0.00003058789,0.000017604994],"domain_scores_gemma":[0.9997099,0.00012211959,0.00006001677,0.000025652542,0.000055480137,0.000026723515],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00011486303,0.0001246851,0.00015235228,0.00027795092,0.000096850636,0.00030493495,0.0002479063,0.00020722272,0.0010333728],"category_scores_gemma":[0.00038777784,0.00012055729,0.000084583204,0.00027688977,0.00026144445,0.00025860732,0.000088874236,0.0002901188,0.0001006562],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00012228376,0.000016470078,0.0010233689,0.000029537998,0.000008935559,0.00011233487,0.000059311595,0.0003631346,0.9958786,0.00014744511,0.000028571221,0.0022100923],"study_design_scores_gemma":[0.000008679391,0.0002001292,0.00862814,0.0000029340767,0.000010081317,0.00011098193,0.000047072277,0.004801045,0.9858521,0.00004614936,0.00028600552,0.0000065788895],"about_ca_topic_score_codex":0.00088863773,"about_ca_topic_score_gemma":0.00084003404,"teacher_disagreement_score":0.0010333728,"about_ca_system_score_codex":0.00035318767,"about_ca_system_score_gemma":0.00010452006,"threshold_uncertainty_score":0.0034569502},"labels":[],"label_agreement":null},{"id":"W2084689649","doi":"10.1063/1.1569665","title":"Fluence- and temperature-dependent studies of carrier dynamics in radiation-damaged silicon-on-sapphire and amorphous silicon","year":2003,"lang":"en","type":"article","venue":"Journal of Applied Physics","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":33,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Alberta","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Fluence; Materials science; Silicon; Amorphous solid; Sapphire; Electron mobility; Amorphous silicon; Thin film; Silicon on sapphire; Relaxation (psychology); Irradiation; Analytical Chemistry (journal); Optoelectronics; Optics; Chemistry; Silicon on insulator; Crystalline silicon; Laser; Nanotechnology; Crystallography","score_opus":0.008307052348537165,"score_gpt":0.2162232641879543,"score_spread":0.20791621183941714,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2084689649","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99932194,0.00021215082,0.00027906624,0.0000075616385,0.0000017182757,0.0000033493568,0.000045592344,0.0000060577395,0.00012271077],"genre_scores_gemma":[0.99849164,0.00021075262,0.00083333254,0.000007587843,0.0000023199443,0.000007764783,0.000109160734,0.000009572221,0.0003278858],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999292,0.000007955492,0.0000041026965,0.000018679806,0.00002310232,0.000016984492],"domain_scores_gemma":[0.9997316,0.00010946256,0.000072830706,0.000024485877,0.000039455143,0.000022116254],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00012463899,0.00022079259,0.00021736031,0.0002248209,0.0001563217,0.000178631,0.00021900666,0.00023242075,0.0008792845],"category_scores_gemma":[0.00036920456,0.0001880757,0.0001543463,0.00022688755,0.00023630315,0.000248095,0.00012672652,0.00023977965,0.0001242115],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000057608162,0.000006998694,0.00064144237,0.000031592266,0.000008064395,0.00006196891,0.000055981254,0.00030906865,0.99816716,0.000024761466,0.000008389899,0.00062689156],"study_design_scores_gemma":[0.000013064454,0.00032319283,0.019677388,0.000008018215,0.000022287652,0.0002651359,0.00009553662,0.0048305886,0.9742632,0.00003245421,0.00045499776,0.000014071535],"about_ca_topic_score_codex":0.0016127634,"about_ca_topic_score_gemma":0.0014869106,"teacher_disagreement_score":0.0016127634,"about_ca_system_score_codex":0.00026157312,"about_ca_system_score_gemma":0.00013075247,"threshold_uncertainty_score":0.0032067895},"labels":[],"label_agreement":null},{"id":"W2085826368","doi":"10.1016/s0038-1098(02)00122-9","title":"Optical absorption in an amorphous silicon superlattice grown by molecular beam epitaxy","year":2002,"lang":"en","type":"article","venue":"Solid State Communications","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":26,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Regina; National Research Council Canada; Institute for Microstructural Sciences","funders":"Natural Sciences and Engineering Research Council of Canada; CMC Microsystems","keywords":"Superlattice; Molecular beam epitaxy; Amorphous solid; Materials science; Thin film; Absorption edge; Absorption (acoustics); Specular reflection; Silicon; Epitaxy; Sapphire; Optics; Optoelectronics; Chemistry; Crystallography; Nanotechnology; Laser; Layer (electronics); Physics","score_opus":0.023334541673855073,"score_gpt":0.24777469100744806,"score_spread":0.224440149333593,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2085826368","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99523646,0.00024583144,0.00091168116,0.00021729316,0.000027738319,0.000004729036,0.00004931863,0.000052976,0.0032539791],"genre_scores_gemma":[0.9968054,0.00010850909,0.000973458,0.000028772372,0.000012670371,0.0000045208285,0.000042593794,0.00001335295,0.0020106104],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99993277,0.000006995019,0.0000017776814,0.000009423631,0.000030906886,0.000018160108],"domain_scores_gemma":[0.99985695,0.00006371947,0.000022100681,0.000011594863,0.000025170639,0.000020513742],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000111859306,0.00013786033,0.0002929924,0.0001978285,0.00046072685,0.0004512532,0.00031527274,0.00026135947,0.0012001724],"category_scores_gemma":[0.0002575785,0.00019457421,0.00010901037,0.00021314893,0.0003310428,0.00026662246,0.0002201248,0.00036123328,0.00023777828],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00021272106,0.000030857904,0.0005190682,0.000045006575,0.0000055261053,0.0002497397,0.000072399685,0.00064048707,0.99531174,0.0017072228,0.0002564467,0.00094869325],"study_design_scores_gemma":[0.00009658256,0.00034187164,0.0048212917,0.000013454333,0.000017477778,0.00023049944,0.00014022786,0.025814338,0.9656407,0.00060534175,0.00226193,0.000016254193],"about_ca_topic_score_codex":0.0030872987,"about_ca_topic_score_gemma":0.005133113,"teacher_disagreement_score":0.0030872987,"about_ca_system_score_codex":0.0004890544,"about_ca_system_score_gemma":0.00036809206,"threshold_uncertainty_score":0.0061386824},"labels":[],"label_agreement":null},{"id":"W2086020403","doi":"10.1889/1.2785620","title":"52.2: A Low‐Cost Stable Amorphous Silicon AMOLED Display with Full V <sub>T</sub> ‐ and V <sub>OLED</sub> Shift Compensation","year":2007,"lang":"en","type":"article","venue":"SID Symposium Digest of Technical Papers","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":10,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"IGNIS Innovation (Canada)","funders":"","keywords":"AMOLED; OLED; Materials science; Compensation (psychology); Optoelectronics; Pixel; Electronic engineering; Computer science; Electrical engineering; Thin-film transistor; Engineering; Nanotechnology; Active matrix; Artificial intelligence; Layer (electronics)","score_opus":0.00439334461593496,"score_gpt":0.18609181221833285,"score_spread":0.18169846760239788,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2086020403","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.96518445,0.00016538132,0.017707247,0.0002643928,0.000089593304,0.000039642906,0.00031689182,0.0022784746,0.013954024],"genre_scores_gemma":[0.9772778,0.000054081374,0.011066464,0.00006475447,0.000021835081,0.00001956155,0.00030101233,0.0001244761,0.011070105],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999311,0.0000048307106,0.0000021780904,0.000017839155,0.000027226457,0.000016898925],"domain_scores_gemma":[0.99994814,0.000008595672,0.0000055521014,0.0000084474905,0.000013394512,0.000015827978],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00006250792,0.00015054099,0.00020172377,0.00013510506,0.00028425548,0.00023927973,0.00030553094,0.00030878698,0.00413713],"category_scores_gemma":[0.00011900054,0.00010744788,0.00015367607,0.00007823671,0.00012401918,0.00021146596,0.000117993775,0.0001999677,0.0012317766],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00012997778,0.000048610524,0.00081880164,0.000021177411,0.000010665126,0.00054249057,0.000044909008,0.00027212087,0.9845873,0.00039810044,0.0018714906,0.011254391],"study_design_scores_gemma":[0.000080133024,0.0007569122,0.016477069,0.000009226425,0.000042814303,0.0017143772,0.000038454444,0.014366931,0.9452954,0.00015265933,0.021031518,0.00003453625],"about_ca_topic_score_codex":0.00076453714,"about_ca_topic_score_gemma":0.0008142723,"teacher_disagreement_score":0.00413713,"about_ca_system_score_codex":0.00014910084,"about_ca_system_score_gemma":0.00011614993,"threshold_uncertainty_score":0.013840079},"labels":[],"label_agreement":null},{"id":"W2086059412","doi":"10.1063/1.2189115","title":"Influence of growth temperature on order within silicon films grown by ultrahigh-vacuum evaporation on silica","year":2006,"lang":"en","type":"article","venue":"Applied Physics Letters","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":16,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Regina; National Research Council Canada; Institute for Microstructural Sciences","funders":"","keywords":"Raman spectroscopy; Vacuum evaporation; Silicon; Evaporation; Materials science; Absorption (acoustics); Thin film; Phonon; Transverse plane; Order (exchange); Analytical Chemistry (journal); Optics; Condensed matter physics; Chemistry; Nanotechnology; Optoelectronics; Composite material; Physics; Thermodynamics","score_opus":0.0031573212772757044,"score_gpt":0.1675406386644617,"score_spread":0.164383317387186,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2086059412","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9988649,0.00021533707,0.0004594887,0.000010203695,0.000003002322,0.0000032774535,0.000026539441,0.000011809996,0.0004054966],"genre_scores_gemma":[0.9983552,0.00028553652,0.00090292876,0.000006139437,0.0000030423507,0.0000049079913,0.00006011622,0.000016352047,0.00036567132],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99984074,0.000016257818,0.000011134392,0.000030829975,0.00007042059,0.000030663512],"domain_scores_gemma":[0.9996166,0.00018988138,0.00008145982,0.00003044892,0.000059311904,0.000022128645],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0001604794,0.00022584725,0.00024067042,0.00019806973,0.00027186805,0.00042600333,0.00017614619,0.00016044649,0.0005800892],"category_scores_gemma":[0.0004287893,0.00028908672,0.00020627314,0.0001481273,0.00039859384,0.00035518303,0.00023148042,0.0003423959,0.00014350665],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00003395577,0.000005295144,0.00056968484,0.000021978823,0.000007953646,0.000032896125,0.000037871876,0.0003084306,0.9985166,0.000037653135,0.0000062915697,0.00042142253],"study_design_scores_gemma":[0.0000032699224,0.00007420608,0.0041253683,0.0000038155185,0.000009753373,0.00004159088,0.000034116492,0.0013630358,0.99416417,0.00001475997,0.00016060907,0.000005293434],"about_ca_topic_score_codex":0.0015682725,"about_ca_topic_score_gemma":0.003250918,"teacher_disagreement_score":0.0015682725,"about_ca_system_score_codex":0.00034260785,"about_ca_system_score_gemma":0.00018698178,"threshold_uncertainty_score":0.0031182766},"labels":[],"label_agreement":null},{"id":"W2086643400","doi":"10.1016/j.tsf.2008.02.050","title":"Structural and electrical characteristics of nanocrystalline silicon prepared by hot-wire chemical vapor deposition on polymer substrates","year":2008,"lang":"en","type":"article","venue":"Thin Solid Films","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Simon Fraser University; University of Waterloo","funders":"British Columbia Knowledge Development Fund; Natural Sciences and Engineering Research Council of Canada","keywords":"Materials science; Nanocrystalline material; Polyimide; Silane; Chemical vapor deposition; Crystallinity; Raman spectroscopy; Silicon; Substrate (aquarium); Silicon nitride; Nanocrystalline silicon; Chemical engineering; Composite material; Layer (electronics); Crystalline silicon; Nanotechnology; Optoelectronics; Amorphous silicon; Optics","score_opus":0.008008389083831717,"score_gpt":0.20133871532446593,"score_spread":0.1933303262406342,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2086643400","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99856466,0.00018147157,0.00024321079,0.00002167648,0.000013375955,0.0000031920617,0.00018437345,0.000013969011,0.0007741502],"genre_scores_gemma":[0.99853086,0.00011210509,0.0003276208,0.0000074787663,0.0000049749106,0.0000037805496,0.00023005829,0.0000073344568,0.000775788],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999169,0.000004424273,0.000003887628,0.000020722677,0.000032893506,0.000021133614],"domain_scores_gemma":[0.99977285,0.000078668774,0.000050399703,0.000021579268,0.00005128799,0.000025230716],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000080833095,0.00012191042,0.00018644288,0.00021442641,0.00015383866,0.00019319014,0.00023858469,0.00025749282,0.0020219618],"category_scores_gemma":[0.00030683927,0.00013857085,0.000113960785,0.00027159808,0.0001623073,0.00018260133,0.000074865566,0.00023056034,0.0001904974],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00016582145,0.00001635446,0.00073735055,0.00004777448,0.000011630419,0.00009152545,0.000047216672,0.0004299779,0.99683553,0.00013487156,0.00015051723,0.0013315097],"study_design_scores_gemma":[0.00001810853,0.00032453742,0.012298978,0.0000060873112,0.000017687848,0.000079122874,0.00007413198,0.0033629884,0.983077,0.000033840737,0.0006990628,0.000008349581],"about_ca_topic_score_codex":0.0019093506,"about_ca_topic_score_gemma":0.0036259326,"teacher_disagreement_score":0.0020219618,"about_ca_system_score_codex":0.0003122018,"about_ca_system_score_gemma":0.00019645595,"threshold_uncertainty_score":0.0067641735},"labels":[],"label_agreement":null},{"id":"W2087181495","doi":"10.1063/1.1942641","title":"High-mobility nanocrystalline silicon thin-film transistors fabricated by plasma-enhanced chemical vapor deposition","year":2005,"lang":"en","type":"article","venue":"Applied Physics Letters","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":148,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Materials science; Silane; Chemical vapor deposition; Silicon; Thin film; Analytical Chemistry (journal); Plasma-enhanced chemical vapor deposition; Thin-film transistor; Nanocrystalline material; Nanocrystalline silicon; Electron mobility; Threshold voltage; Raman spectroscopy; Optoelectronics; Layer (electronics); Nanotechnology; Transistor; Chemistry; Crystalline silicon; Voltage; Composite material; Electrical engineering; Optics","score_opus":0.004909370754315757,"score_gpt":0.17453247205339117,"score_spread":0.16962310129907543,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2087181495","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.98004925,0.0009120655,0.011661363,0.00012531361,0.000073833915,0.00007527602,0.0006926943,0.00037448606,0.006035763],"genre_scores_gemma":[0.9649909,0.0008108657,0.02923071,0.00004943264,0.000023325621,0.00007605017,0.00056932174,0.000048176036,0.0042012073],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99992776,0.000002503475,0.000004434442,0.00001776321,0.00003386105,0.000013647115],"domain_scores_gemma":[0.99991846,0.000021786747,0.000010673497,0.000013508646,0.000023938788,0.000011602701],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00009799029,0.00021455545,0.00027106388,0.0001212814,0.00016826997,0.00020902992,0.00038987305,0.00016241366,0.0012977052],"category_scores_gemma":[0.00013398544,0.00017711392,0.00013677761,0.00013967816,0.00013858154,0.00018791671,0.00011609135,0.00025622325,0.00037626538],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000009142195,0.000003195957,0.000051029987,0.000015640699,0.00000203354,0.000017665032,0.000006355144,0.00005196728,0.9990369,0.00006624795,0.00006454968,0.00067521085],"study_design_scores_gemma":[0.000011529405,0.000045435594,0.0010128297,0.0000018646151,0.0000069653624,0.00007603822,0.000006797336,0.001541768,0.9957495,0.000036807007,0.0015079112,0.0000025445854],"about_ca_topic_score_codex":0.002211621,"about_ca_topic_score_gemma":0.006610487,"teacher_disagreement_score":0.002211621,"about_ca_system_score_codex":0.0005328501,"about_ca_system_score_gemma":0.00027067083,"threshold_uncertainty_score":0.0043975115},"labels":[],"label_agreement":null},{"id":"W2087349998","doi":"10.1016/j.tsf.2011.10.016","title":"Goniocolorimetric study of aluminum oxide films deposited by atomic layer deposition","year":2011,"lang":"en","type":"article","venue":"Thin Solid Films","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Carleton University","funders":"","keywords":"Atomic layer deposition; Aluminum oxide; Layer (electronics); Deposition (geology); Aluminium; Materials science; Oxide; Thin film; Layer by layer; Chemical engineering; Metallurgy; Nanotechnology; Geology; Engineering","score_opus":0.019842269383666462,"score_gpt":0.22482357678414402,"score_spread":0.20498130740047757,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2087349998","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9951508,0.0003847003,0.0012506633,0.00006688252,0.00001777271,0.000011829788,0.00022352827,0.000037584374,0.0028561181],"genre_scores_gemma":[0.99736375,0.00020576686,0.00082383864,0.00002480263,0.000004851728,0.000007750053,0.00011842392,0.000016824924,0.0014339666],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999045,0.000010349452,0.0000028384775,0.000016049402,0.000049874376,0.000016357146],"domain_scores_gemma":[0.99986696,0.00004246934,0.000021372405,0.000017326482,0.000040457024,0.0000114914565],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00011550964,0.00015127053,0.00012487595,0.0002688084,0.00021376094,0.00022539291,0.00020486249,0.00015727857,0.0014262341],"category_scores_gemma":[0.00023049726,0.00010511456,0.000095801115,0.0003032404,0.00032319326,0.00011503612,0.00014749053,0.00030639843,0.00012030511],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00005765956,0.000009371765,0.00080439256,0.00003503104,0.000003908265,0.0000610619,0.0000729584,0.0000493337,0.9978417,0.00012122052,0.00006430971,0.0008790511],"study_design_scores_gemma":[0.000014145826,0.000100184596,0.020818831,0.0000049347395,0.000010693166,0.00013374677,0.00015242376,0.0007820904,0.97651744,0.000052996205,0.0014040248,0.000008378519],"about_ca_topic_score_codex":0.0031612632,"about_ca_topic_score_gemma":0.0037667572,"teacher_disagreement_score":0.0031612632,"about_ca_system_score_codex":0.0002031808,"about_ca_system_score_gemma":0.00017537647,"threshold_uncertainty_score":0.006285727},"labels":[],"label_agreement":null},{"id":"W2087417401","doi":"10.1117/12.2007973","title":"Low dark current and high dynamic range a-Si:H MSM photodetector for large area medical imaging","year":2013,"lang":"en","type":"article","venue":"Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":2,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Toronto; University of Waterloo","funders":"Government of Canada","keywords":"Dark current; Optoelectronics; Materials science; Responsivity; Photodetector; Photodiode; Photocurrent; Quantum efficiency; Dynamic range; Amorphous silicon; Detector; Wide dynamic range; Optics; Silicon; Crystalline silicon; Physics","score_opus":0.0063940369161262075,"score_gpt":0.2110966816864279,"score_spread":0.2047026447703017,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2087417401","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9344445,0.002429678,0.05644813,0.00022476219,0.00006362962,0.00006006633,0.00046429876,0.00083916605,0.0050257803],"genre_scores_gemma":[0.9525416,0.0005358922,0.043618094,0.000105367966,0.000025129782,0.000034321227,0.00013111717,0.000020610882,0.0029878353],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998559,0.000019227771,0.000008692867,0.000037002883,0.000065684544,0.000013490999],"domain_scores_gemma":[0.99988544,0.000029832545,0.00002292584,0.000010688148,0.0000344069,0.000016636153],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00021831803,0.00023929958,0.00016068948,0.00020866212,0.00013846201,0.00026848796,0.00030254302,0.00034044686,0.001146652],"category_scores_gemma":[0.0001645075,0.00014369875,0.00014686449,0.00021992676,0.00014036363,0.00022529322,0.00025723493,0.00021870033,0.00045385148],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00004112819,0.000012526641,0.00065847073,0.00004167062,0.0000052098085,0.00007924945,0.000014501808,0.00007215628,0.99416554,0.00018793001,0.00015184445,0.004569708],"study_design_scores_gemma":[0.0000070003093,0.00018441556,0.003467585,0.0000066199773,0.000012923789,0.0005533546,0.00002241009,0.0035117604,0.99013865,0.000050053033,0.002034618,0.000010790477],"about_ca_topic_score_codex":0.00025960413,"about_ca_topic_score_gemma":0.0006521729,"teacher_disagreement_score":0.001146652,"about_ca_system_score_codex":0.00018436396,"about_ca_system_score_gemma":0.00018794557,"threshold_uncertainty_score":0.0038359165},"labels":[],"label_agreement":null},{"id":"W2087885185","doi":"10.1063/1.2980329","title":"Optical transitions and the mobility edge in amorphous semiconductors: A joint density of states analysis","year":2008,"lang":"en","type":"article","venue":"Journal of Applied Physics","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":31,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Windsor; University of Regina","funders":"Natural Sciences and Engineering Research Council of Canada; CMC Microsystems","keywords":"Density of states; Quasi Fermi level; Condensed matter physics; Semimetal; Semiconductor; Electronic structure; Valence (chemistry); Electronic band structure; Tight binding; Materials science; Band gap; Physics; Quantum mechanics; Optoelectronics","score_opus":0.013227233584444527,"score_gpt":0.19322469491558794,"score_spread":0.17999746133114342,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2087885185","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.3668737,0.0006354092,0.62353575,0.0003165745,0.00001803492,0.00004655516,0.00008701192,0.00016023153,0.008326714],"genre_scores_gemma":[0.9814082,0.00031335946,0.016766815,0.000042019296,0.000017098511,0.00004685437,0.000050623883,0.000023481392,0.0013315624],"study_design_codex":"simulation_or_modeling","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9997087,0.00008361293,0.000010872798,0.000032413653,0.000118243755,0.000046195222],"domain_scores_gemma":[0.99859256,0.0010544276,0.000088469285,0.00013673163,0.00009355819,0.00003422799],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0011579986,0.00042689568,0.0004656856,0.001068993,0.00043348392,0.0008728182,0.00077454024,0.00061949785,0.0016168407],"category_scores_gemma":[0.0027888387,0.0002688845,0.0008227869,0.0005681758,0.0011681597,0.0016645391,0.00080910185,0.0005665819,0.00013605424],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000076357726,0.00012948888,0.0036914449,0.000107326094,0.00007988465,0.00026073665,0.00023857615,0.5457187,0.015741002,0.41733924,0.00041891666,0.016198346],"study_design_scores_gemma":[0.0000029881303,0.000016195143,0.0007184862,0.0000087697645,0.000014226278,0.000056298384,0.000028586002,0.96141344,0.0013823612,0.036173146,0.00017637503,0.0000091026295],"about_ca_topic_score_codex":0.0012295136,"about_ca_topic_score_gemma":0.0010117799,"teacher_disagreement_score":0.0016168407,"about_ca_system_score_codex":0.00046757067,"about_ca_system_score_gemma":0.0003262404,"threshold_uncertainty_score":0.006124139},"labels":[],"label_agreement":null},{"id":"W2088187105","doi":"10.1063/1.3110722","title":"<i>In situ</i> x-ray diffraction study of metal induced crystallization of amorphous germanium","year":2009,"lang":"en","type":"article","venue":"Journal of Applied Physics","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":119,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Polytechnique Montréal","funders":"Fonds Wetenschappelijk Onderzoek; Vlaamse regering; U.S. Department of Energy","keywords":"Crystallization; Materials science; Amorphous solid; Germanium; Amorphous metal; Silicon; Amorphous silicon; Metal; Crystallography; Analytical Chemistry (journal); Chemical engineering; Metallurgy; Chemistry; Crystalline silicon; Organic chemistry","score_opus":0.011468973871569588,"score_gpt":0.2192163062018395,"score_spread":0.2077473323302699,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2088187105","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9910301,0.0016658257,0.0026480278,0.00010695302,0.00002415858,0.000013448211,0.00040702827,0.000044114586,0.0040603927],"genre_scores_gemma":[0.99386746,0.0009808725,0.0029146504,0.000023722234,0.000015492722,0.000009732244,0.00030212986,0.000020686164,0.0018652605],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99991405,0.000017158694,0.0000061985806,0.000020632224,0.000027373531,0.000014507946],"domain_scores_gemma":[0.9999002,0.00003888907,0.000022392127,0.000009975109,0.000023403385,0.000005111523],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000109217624,0.00014681996,0.00018469279,0.00022099752,0.00022349542,0.00023469751,0.00028822833,0.00018029408,0.000769311],"category_scores_gemma":[0.00017474583,0.00013448937,0.00014825801,0.00027452453,0.00020215237,0.00017569633,0.00010185453,0.00026015667,0.00014464346],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000062942236,0.000015377835,0.00046572794,0.000081794184,0.0000060776997,0.000080570935,0.00005277852,0.00020094299,0.9976891,0.00021892368,0.00013844461,0.0009872995],"study_design_scores_gemma":[0.0000065804547,0.00007065399,0.0033977574,0.0000051545767,0.000008879713,0.0001837823,0.0000529245,0.0014532505,0.9932815,0.0000318016,0.0015035048,0.0000041037433],"about_ca_topic_score_codex":0.0008923502,"about_ca_topic_score_gemma":0.0009399166,"teacher_disagreement_score":0.0008923502,"about_ca_system_score_codex":0.00020117174,"about_ca_system_score_gemma":0.00007566043,"threshold_uncertainty_score":0.0025736094},"labels":[],"label_agreement":null},{"id":"W2088533823","doi":"10.1063/1.1504174","title":"A simplified joint density of states analysis of hydrogenated amorphous silicon","year":2002,"lang":"en","type":"article","venue":"Journal of Applied Physics","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":36,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Regina","funders":"Natural Sciences and Engineering Research Council of Canada; CMC Microsystems","keywords":"Density of states; Amorphous silicon; Joint (building); Probability density function; Silicon; Amorphous solid; Local density of states; Materials science; Statistical physics; Function (biology); Condensed matter physics; Physics; Mathematics; Chemistry; Crystalline silicon; Statistics; Crystallography; Metallurgy","score_opus":0.015404585157550851,"score_gpt":0.18973470135948378,"score_spread":0.17433011620193292,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2088533823","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.24359244,0.0007483051,0.74355084,0.0002681049,0.000024454823,0.00005501874,0.0002500921,0.00029765393,0.011213183],"genre_scores_gemma":[0.9700407,0.00050569634,0.02560476,0.000064924134,0.000021331489,0.00008703069,0.00021887672,0.00006909122,0.0033876135],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99966776,0.0000801471,0.000014330689,0.0000338733,0.00015712676,0.00004675403],"domain_scores_gemma":[0.99945647,0.00025532625,0.000052885276,0.000119580356,0.0000975817,0.000018109979],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0008322813,0.00035765176,0.0006323514,0.0007940661,0.00035891365,0.0008277439,0.0012886119,0.00065450696,0.0019862915],"category_scores_gemma":[0.0020297552,0.00028938756,0.0008130837,0.0005947151,0.0009157019,0.0017619762,0.00052259327,0.00059974764,0.00033882647],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000034203495,0.00003173698,0.0008162496,0.00005025316,0.00003104327,0.00019187182,0.00007447518,0.800937,0.0074965665,0.18393373,0.00046917968,0.005933598],"study_design_scores_gemma":[0.0000015180369,0.0000055861465,0.00019813234,0.000002307776,0.0000036762694,0.000021146818,0.000006672837,0.9869912,0.00042521648,0.012148526,0.00019117525,0.00000472222],"about_ca_topic_score_codex":0.00354665,"about_ca_topic_score_gemma":0.0018591125,"teacher_disagreement_score":0.00354665,"about_ca_system_score_codex":0.00084357266,"about_ca_system_score_gemma":0.0005535872,"threshold_uncertainty_score":0.0070520043},"labels":[],"label_agreement":null},{"id":"W2088670937","doi":"10.1116/1.1648674","title":"Highly conductive n+ hydrogenated microcrystalline silicon and its application in thin film transistors","year":2004,"lang":"en","type":"article","venue":"Journal of Vacuum Science & Technology A Vacuum Surfaces and Films","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":19,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Materials science; Silane; Analytical Chemistry (journal); Hydrogen; Ohmic contact; Conductivity; Thin film; Silicon; Chemical vapor deposition; Raman spectroscopy; Doping; Layer (electronics); Optoelectronics; Nanotechnology; Chemistry; Optics; Composite material","score_opus":0.006960119589572831,"score_gpt":0.21121801582372635,"score_spread":0.20425789623415352,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2088670937","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.98790646,0.0027228051,0.0063320133,0.00008083142,0.000026355812,0.000031595864,0.000097134995,0.00010579702,0.0026970136],"genre_scores_gemma":[0.9894394,0.001155539,0.008367516,0.000024108813,0.000012505507,0.000014353422,0.00006558344,0.000010060288,0.000910951],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999368,0.0000082437355,0.0000045067513,0.000015283455,0.000024910529,0.00001017228],"domain_scores_gemma":[0.99993324,0.00002325569,0.000014060701,0.000010683747,0.000008889022,0.000009750956],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00010886587,0.00016560714,0.00011708848,0.00013605606,0.00010819607,0.0001984058,0.0003154781,0.00020099727,0.00041614944],"category_scores_gemma":[0.00015494927,0.000182982,0.000089385474,0.00014551291,0.00018153785,0.00015323095,0.00013941136,0.00011742962,0.00011305151],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000014392144,0.0000031871152,0.00008451541,0.000022416854,0.0000017298324,0.000041108367,0.000008162446,0.000097162876,0.9986083,0.000053728847,0.000012251238,0.0010530112],"study_design_scores_gemma":[0.000006454907,0.000113476985,0.0010659532,0.0000028276474,0.0000064980186,0.00015122669,0.000008632729,0.0008482596,0.9968773,0.000041597577,0.00087581115,0.0000020417267],"about_ca_topic_score_codex":0.0004084952,"about_ca_topic_score_gemma":0.0009645572,"teacher_disagreement_score":0.00041614944,"about_ca_system_score_codex":0.00021604459,"about_ca_system_score_gemma":0.00011071353,"threshold_uncertainty_score":0.0015676022},"labels":[],"label_agreement":null},{"id":"W2089327234","doi":"10.1109/pvsc.2013.6744208","title":"Novel method for fabricating high efficiency 10 &amp;#x03BC;m thick c-Si solar cells","year":2013,"lang":"en","type":"article","venue":"","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Toronto; McMaster University","funders":"","keywords":"Materials science; Fabrication; Optoelectronics; Absorption (acoustics); Silicon; Solar cell; Laser; Photovoltaics; Energy conversion efficiency; Resist; Wavelength; Pyramid (geometry); Plasmonic solar cell; Optics; Photovoltaic system; Nanotechnology; Polymer solar cell; Composite material; Electrical engineering; Engineering; Layer (electronics)","score_opus":0.017690459164470724,"score_gpt":0.23640287470002772,"score_spread":0.21871241553555698,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2089327234","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.7550514,0.0028712281,0.21081789,0.00070745125,0.0005188305,0.00033794317,0.00083416066,0.0014198864,0.027441148],"genre_scores_gemma":[0.69051313,0.001998362,0.294725,0.00015995976,0.000058403,0.00022172111,0.000316632,0.0000907612,0.011916088],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999001,0.0000038247517,0.000007916073,0.000019799914,0.000055964592,0.000012348146],"domain_scores_gemma":[0.9999182,0.000014204999,0.000020011179,0.000012128531,0.000022958931,0.000012443296],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00008909002,0.0003038134,0.00017320475,0.000247808,0.00025728764,0.00033428273,0.00045857293,0.00043119313,0.0014981654],"category_scores_gemma":[0.00013978635,0.0003031465,0.00015091669,0.00022017452,0.0001882465,0.00029665374,0.00023020056,0.00063393207,0.0008390301],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0000031770112,0.0000062855947,0.000033176835,0.000028718592,0.0000018261813,0.00005068444,0.000011762787,0.000080295955,0.9971841,0.00026382672,0.0001332763,0.0022029025],"study_design_scores_gemma":[0.0000067637898,0.000049127233,0.00043733473,0.0000062168024,0.0000056301205,0.0003241133,0.000020922505,0.0021858255,0.9915991,0.00008853406,0.00526698,0.0000094322295],"about_ca_topic_score_codex":0.00077258126,"about_ca_topic_score_gemma":0.0022549701,"teacher_disagreement_score":0.0014981654,"about_ca_system_score_codex":0.00031100787,"about_ca_system_score_gemma":0.00042824273,"threshold_uncertainty_score":0.0050118566},"labels":[],"label_agreement":null},{"id":"W2089692139","doi":"10.1063/1.4901167","title":"Cost-effective nanostructured thin-film solar cell with enhanced absorption","year":2014,"lang":"en","type":"article","venue":"Applied Physics Letters","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":21,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Victoria","funders":"","keywords":"Materials science; Solar cell; Fabrication; Plasmonic solar cell; Thin film; Nanotechnology; Optoelectronics; Amorphous silicon; Quantum dot solar cell; Photovoltaics; Hybrid solar cell; Electrode; Polymer solar cell; Nanostructure; Photovoltaic system; Crystalline silicon","score_opus":0.005011153758113316,"score_gpt":0.17656118702403598,"score_spread":0.17155003326592266,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2089692139","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9709947,0.0023700013,0.020350926,0.00021169269,0.00014895335,0.000048547292,0.0003278474,0.00033185264,0.0052154125],"genre_scores_gemma":[0.96387887,0.0010293985,0.032582358,0.00006403485,0.000027174849,0.000033651962,0.00019945364,0.000025597252,0.002159337],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999243,0.000004229334,0.000004449528,0.000015504882,0.000042323827,0.000009231128],"domain_scores_gemma":[0.9999583,0.000006385024,0.000007668184,0.0000068737154,0.000014108132,0.0000067231617],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000060948376,0.00017486702,0.00036804678,0.00016513787,0.00015162911,0.00033324034,0.00049590785,0.00038910945,0.00054216845],"category_scores_gemma":[0.00009487843,0.0001523125,0.00020231762,0.00021909458,0.00010760435,0.00027288028,0.00024342308,0.00034550673,0.00041340044],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000008620671,0.000014546335,0.000053193267,0.000025372015,0.000003686869,0.000032276577,0.0000037924203,0.00019675758,0.9978078,0.0001042878,0.00006391147,0.0016859262],"study_design_scores_gemma":[0.000018482371,0.000092713046,0.0008643018,0.000003986753,0.000017599827,0.00018569038,0.0000075092375,0.008061056,0.98858905,0.000081604216,0.0020698693,0.000008225393],"about_ca_topic_score_codex":0.00034529832,"about_ca_topic_score_gemma":0.0010292904,"teacher_disagreement_score":0.00054216845,"about_ca_system_score_codex":0.00024140328,"about_ca_system_score_gemma":0.00015907716,"threshold_uncertainty_score":0.0018137097},"labels":[],"label_agreement":null},{"id":"W2090090890","doi":"10.1109/pvsc.2010.5767516","title":"Correlation of dielectric and vibrational properties of amorphous hydrogenated Si for photovoltaic applications: modeling and experiment","year":2010,"lang":"en","type":"article","venue":"","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Ontario Tech University","funders":"Research Computing Centre, University of Queensland; Natural Sciences and Engineering Research Council of Canada","keywords":"Materials science; Amorphous solid; Amorphous silicon; Dangling bond; Dielectric; Infrared; Ellipsometry; Microelectronics; Band gap; Chemical physics; Silicon; Crystalline silicon; Thin film; Optoelectronics; Nanotechnology; Chemistry; Optics; Crystallography; Physics","score_opus":0.010862585607386866,"score_gpt":0.1938217879620859,"score_spread":0.18295920235469904,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2090090890","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99349535,0.00007625132,0.0050799614,0.00003764436,0.0000022664228,0.0000060969264,0.0001623993,0.000044596778,0.0010954341],"genre_scores_gemma":[0.99852633,0.00007717844,0.0010519673,0.0000038376943,0.0000017412062,0.000009317949,0.00014131764,0.000006467028,0.00018176822],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9999691,0.000006883368,0.0000017916617,0.0000081908065,0.000008856846,0.000005222137],"domain_scores_gemma":[0.9998411,0.000095035524,0.000022283395,0.000016021866,0.000017656539,0.000007907419],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00014218476,0.0003101743,0.00019197766,0.00017184742,0.00014735939,0.0002443043,0.00033234977,0.00028067327,0.00057691766],"category_scores_gemma":[0.00032893967,0.00016190294,0.00019332336,0.00029530856,0.0002528587,0.0002698396,0.00008949311,0.0001965558,0.0000893934],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00013547036,0.00013775247,0.013183922,0.00007972189,0.000036656842,0.00014622435,0.000060063263,0.9281257,0.052298993,0.0018430882,0.00022306568,0.0037293239],"study_design_scores_gemma":[0.000007563382,0.000035586876,0.0020272315,0.0000014625485,0.000004774726,0.000011246077,0.000007630646,0.99046654,0.0070848786,0.00028509344,0.00006344415,0.0000045014453],"about_ca_topic_score_codex":0.002073487,"about_ca_topic_score_gemma":0.0011616722,"teacher_disagreement_score":0.002073487,"about_ca_system_score_codex":0.00023897695,"about_ca_system_score_gemma":0.00020512224,"threshold_uncertainty_score":0.0041227937},"labels":[],"label_agreement":null},{"id":"W2090320658","doi":"10.1364/oe.17.008871","title":"High-efficiency photonic crystal solar cell architecture","year":2009,"lang":"en","type":"article","venue":"Optics Express","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":127,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Toronto","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Materials science; Energy conversion efficiency; Photonic crystal; Optics; Optoelectronics; Solar cell efficiency; Plasmonic solar cell; Silicon; Thin film; Solar cell; Absorption (acoustics); Solar energy; Crystalline silicon; Attenuation coefficient; Polymer solar cell; Nanotechnology; Physics","score_opus":0.005106864107666132,"score_gpt":0.18097239502379,"score_spread":0.17586553091612386,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2090320658","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.8549522,0.0010146593,0.097159766,0.00056218967,0.00016592609,0.00009309305,0.00078208995,0.0016188029,0.043651346],"genre_scores_gemma":[0.9572368,0.0004894241,0.037226904,0.000059144746,0.000024996312,0.00005551977,0.0002601421,0.00003292661,0.0046141823],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999553,0.0000034132886,0.0000032030282,0.000008321051,0.000021357606,0.000008438718],"domain_scores_gemma":[0.99994636,0.000006396308,0.0000055549835,0.000008903375,0.000026669717,0.000006079976],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000046988534,0.00015977642,0.00028433654,0.00015792731,0.00028753805,0.00045962364,0.0006686163,0.00034248145,0.00163929],"category_scores_gemma":[0.000080484286,0.00013174316,0.00012891993,0.0002831816,0.00013933814,0.000322348,0.0001971871,0.00027593735,0.00062289124],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00007399178,0.00005869325,0.00043262524,0.00012768526,0.00003932564,0.00031172775,0.000020862519,0.015368133,0.9557086,0.0100251045,0.0017071792,0.01612616],"study_design_scores_gemma":[0.00009726987,0.00027758183,0.0022239268,0.000021414726,0.000081011705,0.0010596031,0.000040193143,0.203615,0.77161986,0.005143337,0.015768478,0.000052370273],"about_ca_topic_score_codex":0.0011814997,"about_ca_topic_score_gemma":0.0029232553,"teacher_disagreement_score":0.00163929,"about_ca_system_score_codex":0.00038903474,"about_ca_system_score_gemma":0.00036752384,"threshold_uncertainty_score":0.0054839253},"labels":[],"label_agreement":null},{"id":"W2090359589","doi":"10.1049/el:20058209","title":"Driving scheme for stable operation of 2-TFT a-Si AMOLED pixel","year":2005,"lang":"en","type":"article","venue":"Electronics Letters","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":16,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"AMOLED; Thin-film transistor; Backplane; Active matrix; Materials science; OLED; Threshold voltage; Pixel; Diode; Optoelectronics; Transistor; Amorphous silicon; Voltage; Electrical engineering; Electronic engineering; Silicon; Computer science; Engineering; Artificial intelligence; Crystalline silicon; Nanotechnology","score_opus":0.004978227125103619,"score_gpt":0.19143549776363047,"score_spread":0.18645727063852685,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2090359589","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.935673,0.00030082348,0.053399067,0.00036425376,0.00018843552,0.00012640687,0.00042445408,0.0011184304,0.008405154],"genre_scores_gemma":[0.98328674,0.000079759244,0.013623997,0.00006540263,0.00002167075,0.000043321026,0.00009144826,0.000040981624,0.0027466663],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999293,0.0000045006655,0.0000043766545,0.000027105189,0.000020660536,0.000014092461],"domain_scores_gemma":[0.99993217,0.000012979427,0.000010761615,0.000014170586,0.00002055498,0.000009401714],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00006127987,0.0001298269,0.0001126427,0.00015219374,0.00024952166,0.00018714891,0.00051894016,0.0002844534,0.0023695074],"category_scores_gemma":[0.00012779098,0.00010339404,0.000072921335,0.00011416417,0.00010757172,0.00022695637,0.00018673857,0.00017729895,0.0005327622],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000064675456,0.000021842887,0.00021380051,0.000034125933,0.000003591123,0.00010904501,0.000054221055,0.00022123277,0.98979187,0.0010127127,0.00042914727,0.008043701],"study_design_scores_gemma":[0.00003226701,0.00021206021,0.0012342709,0.000004863819,0.0000056662752,0.00029795856,0.000018554283,0.013016498,0.97759163,0.00032405058,0.007250519,0.000011634272],"about_ca_topic_score_codex":0.0002789728,"about_ca_topic_score_gemma":0.00043954764,"teacher_disagreement_score":0.0023695074,"about_ca_system_score_codex":0.00022756089,"about_ca_system_score_gemma":0.00013726979,"threshold_uncertainty_score":0.007926762},"labels":[],"label_agreement":null},{"id":"W2091601023","doi":"10.1063/1.4833542","title":"See-through amorphous silicon solar cells with selectively transparent and conducting photonic crystal back reflectors for building integrated photovoltaics","year":2013,"lang":"en","type":"article","venue":"Applied Physics Letters","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":27,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Toronto","funders":"","keywords":"Materials science; Optoelectronics; Amorphous silicon; Photovoltaics; Reflector (photography); Photonic crystal; Solar cell; Photovoltaic system; Silicon; Monocrystalline silicon; Optics; Tilt (camera); Amorphous solid; Crystalline silicon; Polymer solar cell; Electrical engineering; Physics; Light source; Chemistry; Engineering; Crystallography","score_opus":0.02563860309089223,"score_gpt":0.21521613677831264,"score_spread":0.18957753368742042,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2091601023","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9897718,0.0007144838,0.007303859,0.000039431226,0.00003163497,0.000018184512,0.00015772131,0.00020074334,0.0017621608],"genre_scores_gemma":[0.98838645,0.0010563821,0.008883324,0.000022510567,0.000015199371,0.000019426652,0.00012350552,0.000017572123,0.0014755274],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99991727,0.0000067177334,0.000004950961,0.000011894704,0.000046265533,0.000012874544],"domain_scores_gemma":[0.9999404,0.000017897873,0.000014581331,0.000010093115,0.00001168757,0.000005341624],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000074410906,0.00021755417,0.00027144302,0.00011743488,0.0001416775,0.000380122,0.00036732946,0.00025250166,0.0006594176],"category_scores_gemma":[0.000110976835,0.00018551809,0.00018629167,0.00015975375,0.00019416389,0.0003103722,0.00019298706,0.0002909004,0.00027434243],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000021346594,0.000007951341,0.00010495635,0.000023845505,0.000004180156,0.000043441654,0.000010196315,0.00015149011,0.99812156,0.00012659367,0.00003511576,0.001349416],"study_design_scores_gemma":[0.000008467068,0.00009587892,0.0007727369,0.0000033139527,0.000011493181,0.000118901466,0.000014058674,0.0017136367,0.9963844,0.000053987213,0.00081941375,0.0000036813499],"about_ca_topic_score_codex":0.00054161495,"about_ca_topic_score_gemma":0.001471987,"teacher_disagreement_score":0.0006594176,"about_ca_system_score_codex":0.00016119682,"about_ca_system_score_gemma":0.00015874517,"threshold_uncertainty_score":0.0022059083},"labels":[],"label_agreement":null},{"id":"W2091732622","doi":"10.1116/1.1649988","title":"Variable current transport in polymer thin film transistors","year":2004,"lang":"en","type":"article","venue":"Journal of Vacuum Science & Technology A Vacuum Surfaces and Films","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":10,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Simon Fraser University; McMaster University","funders":"","keywords":"Materials science; Polymer; Transistor; Optoelectronics; Thin-film transistor; Current (fluid); Electrode; Threshold voltage; Voltage; Deposition (geology); Field-effect transistor; Electrical engineering; Nanotechnology; Composite material; Chemistry; Layer (electronics)","score_opus":0.007501874270868326,"score_gpt":0.215480386701994,"score_spread":0.20797851243112567,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2091732622","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9396097,0.013682469,0.03580768,0.00043988597,0.00020293088,0.00004881734,0.00016047337,0.0005654985,0.009482568],"genre_scores_gemma":[0.9917407,0.002800517,0.003341339,0.000030488865,0.000041452753,0.00001691256,0.0000740807,0.000036565183,0.0019179436],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99985266,0.000017214908,0.000007257413,0.00003650337,0.00006353837,0.000022822585],"domain_scores_gemma":[0.9997876,0.000095294636,0.000046107805,0.000017157457,0.00003650747,0.000017378357],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00014205628,0.00029265488,0.00025422208,0.00041618335,0.00030249948,0.000503391,0.00047994047,0.0004415094,0.00086946186],"category_scores_gemma":[0.00061811844,0.00018364811,0.00016032584,0.00039530883,0.00053164596,0.0010027966,0.00025431009,0.00040065538,0.00025424655],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0001636713,0.000047206744,0.0006159302,0.00024106304,0.000016754952,0.00043660495,0.00011811758,0.0073283515,0.97341657,0.0067171943,0.00039746816,0.010501208],"study_design_scores_gemma":[0.00007576433,0.0003292434,0.0016723117,0.000072609626,0.000049654253,0.000941652,0.00006493848,0.064390145,0.9169463,0.0066954284,0.008717566,0.000044475037],"about_ca_topic_score_codex":0.0005508426,"about_ca_topic_score_gemma":0.00032319484,"teacher_disagreement_score":0.00086946186,"about_ca_system_score_codex":0.0006598312,"about_ca_system_score_gemma":0.00014752276,"threshold_uncertainty_score":0.0047875047},"labels":[],"label_agreement":null},{"id":"W2092014631","doi":"10.1088/0268-1242/26/4/045009","title":"Defect-enhanced photo-detection at 1550 nm in a silicon waveguide formed via LOCOS","year":2011,"lang":"en","type":"article","venue":"Semiconductor Science and Technology","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":5,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Carleton University; McMaster University","funders":"","keywords":"Responsivity; LOCOS; Materials science; Silicon; Optoelectronics; Photodiode; Polycrystalline silicon; Waveguide; Silicon photonics; Optical power; Optics; Layer (electronics); Silicon nitride; Photodetector; Nanotechnology","score_opus":0.013736635708379944,"score_gpt":0.2015008618390822,"score_spread":0.18776422613070226,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2092014631","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9892125,0.0002848373,0.0097751515,0.000028190074,0.000018814168,0.000010914463,0.00006518216,0.00013220005,0.00047214516],"genre_scores_gemma":[0.97871655,0.00021048317,0.019490635,0.000023487779,0.000013199169,0.000023300396,0.00011161558,0.000023238594,0.0013876193],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99986553,0.000012876948,0.0000059487775,0.00004220401,0.00005104071,0.000022378028],"domain_scores_gemma":[0.9997559,0.000061418716,0.00008557025,0.00002407615,0.000047282258,0.000025758256],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00018670972,0.00026881607,0.00022288381,0.00016646823,0.00008800198,0.00033354358,0.00044171693,0.0002802938,0.00033793578],"category_scores_gemma":[0.00024841525,0.0002319397,0.00016792376,0.00013815037,0.00023481074,0.00027898687,0.00021842586,0.00025214898,0.00018959172],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000037830945,0.000012755232,0.00054548646,0.000018333705,0.0000050417925,0.000050252922,0.000019338564,0.00009060246,0.9979512,0.00006823528,0.00001864161,0.001182274],"study_design_scores_gemma":[0.000010833006,0.00024008704,0.002154383,0.0000034014306,0.000013872669,0.00014484633,0.000015456832,0.0026700124,0.9940269,0.000027779532,0.0006875953,0.000004911555],"about_ca_topic_score_codex":0.00046533477,"about_ca_topic_score_gemma":0.00079861574,"teacher_disagreement_score":0.00046533477,"about_ca_system_score_codex":0.0002261336,"about_ca_system_score_gemma":0.00016828136,"threshold_uncertainty_score":0.0016407967},"labels":[],"label_agreement":null},{"id":"W2092316282","doi":"10.1002/j.2168-0159.2013.tb06192.x","title":"21.4L: <i>Late‐News Paper</i> : Recent Developments of Carbon Nanotube Enabled Vertical Organic Light Emitting Transistors for OLED Displays","year":2013,"lang":"en","type":"article","venue":"SID Symposium Digest of Technical Papers","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":10,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Natural Sciences and Engineering Research Council of Canada; University of Waterloo","keywords":"Transistor; OLED; Optoelectronics; Materials science; Backplane; Carbon nanotube field-effect transistor; Common emitter; AMOLED; Carbon nanotube; Channel (broadcasting); Thin-film transistor; Nanotechnology; Electrical engineering; Engineering; Field-effect transistor; Active matrix; Voltage; Layer (electronics)","score_opus":0.0055671626853833435,"score_gpt":0.18611844009858441,"score_spread":0.18055127741320107,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2092316282","genre_codex":"other","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.12923416,0.016974362,0.010120917,0.03003779,0.026323987,0.00030377158,0.0062118038,0.0029112543,0.777882],"genre_scores_gemma":[0.33930472,0.012753181,0.005871041,0.006135662,0.0074878363,0.00009418463,0.004096545,0.0005481712,0.62370867],"study_design_codex":"not_applicable","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99987864,0.0000067282576,0.000005611535,0.000011763847,0.000066609566,0.000030599822],"domain_scores_gemma":[0.9998846,0.000026216216,0.00001063838,0.000008851201,0.00004499128,0.000024813535],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00025799757,0.0001526629,0.00013263761,0.00041323493,0.00053413765,0.0016081302,0.00037532873,0.00079698925,0.027476551],"category_scores_gemma":[0.00024420556,0.00011599785,0.00013884026,0.00022728508,0.00024815768,0.00047613197,0.00021882902,0.0005678353,0.0070323925],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00074031134,0.00018397806,0.001782794,0.0006637656,0.00003054613,0.0017616574,0.00012226588,0.00040808346,0.3465484,0.011572046,0.48089653,0.1552897],"study_design_scores_gemma":[0.000022497157,0.00017417969,0.0036373453,0.000044387765,0.000010437036,0.0003288439,0.000057821984,0.00073057326,0.14210014,0.0005668958,0.8523066,0.00002026762],"about_ca_topic_score_codex":0.0010076247,"about_ca_topic_score_gemma":0.004849782,"teacher_disagreement_score":0.027476551,"about_ca_system_score_codex":0.00062418706,"about_ca_system_score_gemma":0.00021387082,"threshold_uncertainty_score":0.09191823},"labels":[],"label_agreement":null},{"id":"W2092346907","doi":"10.1116/1.1771661","title":"Process issues with Mo∕a-Si:H Schottky diode and thin film transistors integration for direct x-ray detection","year":2004,"lang":"en","type":"article","venue":"Journal of Vacuum Science & Technology A Vacuum Surfaces and Films","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Materials science; Schottky diode; Optoelectronics; Thin-film transistor; Transistor; Masking (illustration); Fabrication; Stress (linguistics); Diode; Layer (electronics); Sensitivity (control systems); Amorphous solid; Molybdenum; Voltage; Electronic engineering; Nanotechnology; Electrical engineering; Metallurgy; Crystallography","score_opus":0.0066690943997868846,"score_gpt":0.22478517622598568,"score_spread":0.2181160818261988,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2092346907","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.8506052,0.007893922,0.13260026,0.001515245,0.00057161815,0.00039805452,0.00012320785,0.0006984269,0.0055941204],"genre_scores_gemma":[0.83609515,0.0032747933,0.15454604,0.00037629498,0.0001639294,0.00021882795,0.00009596743,0.00012461534,0.005104414],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9991573,0.00008942134,0.00007122412,0.00014597624,0.00047621637,0.00005990579],"domain_scores_gemma":[0.99881196,0.00054520613,0.00021081821,0.00013443096,0.00026255447,0.000035016947],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0011693661,0.00044421732,0.00043697315,0.00029013513,0.00044826797,0.0010278999,0.00080510677,0.0010892386,0.00150633],"category_scores_gemma":[0.0016468749,0.00052656943,0.00034674315,0.0002446066,0.00042276914,0.0009126881,0.00054852315,0.0009722775,0.00061071164],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000058591013,0.000028106484,0.0007881599,0.00019350724,0.000021091315,0.00019402575,0.00011773118,0.00023319357,0.9892211,0.0009259709,0.00013207101,0.008086416],"study_design_scores_gemma":[0.00002212639,0.00046477618,0.002519282,0.00002121558,0.000044357796,0.0012438815,0.000095516436,0.002820898,0.9851295,0.00033059384,0.007291772,0.000016098165],"about_ca_topic_score_codex":0.00044290908,"about_ca_topic_score_gemma":0.0013355992,"teacher_disagreement_score":0.00150633,"about_ca_system_score_codex":0.00047045836,"about_ca_system_score_gemma":0.00046362067,"threshold_uncertainty_score":0.00618428},"labels":[],"label_agreement":null},{"id":"W2092784013","doi":"10.1116/1.2183296","title":"Low leakage a-Si:H thin film transistors deposited on glass substrates using hot-wire chemical vapor deposition","year":2006,"lang":"en","type":"article","venue":"Journal of Vacuum Science & Technology A Vacuum Surfaces and Films","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":4,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Simon Fraser University","funders":"Natural Sciences and Engineering Research Council of Canada; Simon Fraser University","keywords":"Plasma-enhanced chemical vapor deposition; Materials science; Thin-film transistor; Chemical vapor deposition; Optoelectronics; Leakage (economics); Ohmic contact; Layer (electronics); Thin film; Subthreshold slope; Transistor; Field-effect transistor; Nanotechnology; Electrical engineering","score_opus":0.007674080748216005,"score_gpt":0.20757189771597498,"score_spread":0.19989781696775896,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2092784013","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.98120433,0.0011279667,0.012236213,0.0001106182,0.000050463186,0.0000752697,0.0008004232,0.00046515188,0.003929689],"genre_scores_gemma":[0.97844565,0.0007969926,0.016283367,0.000051117167,0.000022813358,0.000058465892,0.0005224819,0.0000558168,0.0037633018],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998944,0.000005789855,0.000008209001,0.000021713833,0.00004484269,0.00002511911],"domain_scores_gemma":[0.9998938,0.000026554899,0.000021571363,0.000023931394,0.000019114741,0.000015082176],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000101069105,0.00022580332,0.00020374298,0.00018799987,0.00017867103,0.00032533068,0.00030646156,0.00020444141,0.0011613009],"category_scores_gemma":[0.00013988756,0.00021459431,0.00015212278,0.00017967902,0.00020290085,0.00024326834,0.00015822319,0.0002274763,0.0005752967],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000014848789,0.0000031399427,0.00010806553,0.000018162711,0.0000030507556,0.000026800259,0.000008561271,0.000034720535,0.99890935,0.00005100576,0.000049854916,0.0007723909],"study_design_scores_gemma":[0.000009145129,0.00007999001,0.0019653616,0.000002571603,0.0000079502925,0.00011165694,0.0000106003245,0.00054673257,0.99620795,0.000031373384,0.0010233766,0.0000032764758],"about_ca_topic_score_codex":0.0009957678,"about_ca_topic_score_gemma":0.0023119135,"teacher_disagreement_score":0.0011613009,"about_ca_system_score_codex":0.0002645164,"about_ca_system_score_gemma":0.00018327445,"threshold_uncertainty_score":0.0038849711},"labels":[],"label_agreement":null},{"id":"W2093979489","doi":"10.1063/1.1555676","title":"Dielectric properties of amorphous hydrogenated silicon carbide thin films grown by plasma-enhanced chemical vapor deposition","year":2003,"lang":"en","type":"article","venue":"Journal of Applied Physics","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":39,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Institut National de la Recherche Scientifique","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Materials science; Plasma-enhanced chemical vapor deposition; Dielectric; Amorphous solid; Chemical vapor deposition; Ohmic contact; Analytical Chemistry (journal); Thermal conduction; Thin film; Silicon carbide; Amorphous silicon; Electrical resistivity and conductivity; Dielectric strength; Silicon; Composite material; Optoelectronics; Nanotechnology; Crystalline silicon; Electrical engineering; Chemistry; Crystallography","score_opus":0.006702262868277238,"score_gpt":0.16890872485777422,"score_spread":0.16220646198949698,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2093979489","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99562365,0.0014424896,0.0012517205,0.000028670016,0.000022738062,0.000011525376,0.00045773352,0.000022568604,0.0011388799],"genre_scores_gemma":[0.9935434,0.0014551206,0.0031295815,0.000023520215,0.000010883548,0.000017647775,0.0007130544,0.000016573034,0.0010902613],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998863,0.0000074030036,0.000010294475,0.0000227763,0.000053592776,0.000019672163],"domain_scores_gemma":[0.99975306,0.000074898446,0.000036546935,0.000018539164,0.00009102462,0.000025863585],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00015261283,0.00025210908,0.00024946957,0.00035983455,0.00018401131,0.00027771544,0.00025470706,0.00024309791,0.0007119458],"category_scores_gemma":[0.00032756836,0.00020614103,0.0001445249,0.00042201235,0.00015349564,0.0002001304,0.00011823435,0.00031313096,0.00018000002],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000033141467,0.0000095256555,0.00035404376,0.000057638852,0.000007040839,0.00005461135,0.00002085549,0.00011706777,0.99822754,0.000027165275,0.000028761011,0.001062652],"study_design_scores_gemma":[0.000008590334,0.00017415114,0.009760287,0.00000894643,0.000014930646,0.00012484012,0.00004858631,0.0010947299,0.9878241,0.00002534644,0.00091007294,0.000005434918],"about_ca_topic_score_codex":0.0007599428,"about_ca_topic_score_gemma":0.00082229543,"teacher_disagreement_score":0.0007599428,"about_ca_system_score_codex":0.00019233531,"about_ca_system_score_gemma":0.00013633892,"threshold_uncertainty_score":0.0023816824},"labels":[],"label_agreement":null},{"id":"W2094605867","doi":"10.1016/j.apsusc.2011.05.052","title":"Boron-doped nanocrystalline silicon thin films for solar cells","year":2011,"lang":"en","type":"article","venue":"Applied Surface Science","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":50,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"University of Waterloo","keywords":"Materials science; Nanocrystalline material; Thin film; Plasma-enhanced chemical vapor deposition; Boron; Silicon; Silane; Doping; Substrate (aquarium); Chemical vapor deposition; Nanocrystalline silicon; Layer (electronics); Analytical Chemistry (journal); Solar cell; Crystalline silicon; Optoelectronics; Nanotechnology; Composite material; Amorphous silicon; Chemistry","score_opus":0.01812125140457154,"score_gpt":0.20531590064460062,"score_spread":0.18719464924002907,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2094605867","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.89800996,0.043134354,0.014705458,0.0015257049,0.0011417294,0.00014026024,0.0014368938,0.0005392891,0.039366487],"genre_scores_gemma":[0.96511024,0.0111855585,0.011582724,0.00018222684,0.000093243034,0.00005940973,0.0005306132,0.00011876831,0.011137313],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99992657,0.000004550979,0.0000044968606,0.000014553137,0.0000345678,0.000015276639],"domain_scores_gemma":[0.9999286,0.000010888514,0.0000100722755,0.000008735828,0.000029858398,0.000012013768],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0000989589,0.00028035234,0.00037218683,0.00022195643,0.00028837266,0.0005714668,0.00039027838,0.0004380669,0.0024569412],"category_scores_gemma":[0.00018080694,0.000288116,0.0001756886,0.00020777094,0.000108444074,0.0004793676,0.00027711477,0.0004805615,0.0008425697],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0000629314,0.000014807044,0.000094671814,0.00018962019,0.00001409528,0.000038609374,0.000023612805,0.0002823342,0.9918637,0.0010263633,0.0010084771,0.0053808377],"study_design_scores_gemma":[0.000031753207,0.00013038782,0.00065235025,0.000054739772,0.00004100535,0.00008740377,0.00006694722,0.0036685204,0.9813343,0.00047771636,0.013441112,0.000013594849],"about_ca_topic_score_codex":0.0021328675,"about_ca_topic_score_gemma":0.0071495282,"teacher_disagreement_score":0.0024569412,"about_ca_system_score_codex":0.0007064699,"about_ca_system_score_gemma":0.00030226394,"threshold_uncertainty_score":0.008219242},"labels":[],"label_agreement":null},{"id":"W2094649173","doi":"10.1116/1.1651544","title":"Optical and compositional characterization of SiOxNy and SiOx thin films deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition","year":2004,"lang":"en","type":"article","venue":"Journal of Vacuum Science & Technology A Vacuum Surfaces and Films","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":15,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McMaster University","funders":"","keywords":"Elastic recoil detection; Silicon oxynitride; Electron cyclotron resonance; Analytical Chemistry (journal); Fourier transform infrared spectroscopy; Thin film; Chemical vapor deposition; Ellipsometry; Silicon; Plasma-enhanced chemical vapor deposition; Materials science; Silicon oxide; Deposition (geology); Chemistry; Ion; Optics; Silicon nitride; Nanotechnology; Optoelectronics","score_opus":0.0030533037984012356,"score_gpt":0.1939367035956697,"score_spread":0.19088339979726845,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2094649173","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99764556,0.00044185424,0.0007707467,0.000017051236,0.0000066284547,0.000010405889,0.00016021659,0.000013917768,0.0009335954],"genre_scores_gemma":[0.99430025,0.00085891876,0.002763092,0.000017179955,0.0000057319,0.000017878558,0.00032414868,0.000012452889,0.0017004695],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999598,0.000002026111,0.0000026588366,0.000007730513,0.000020753234,0.000007038557],"domain_scores_gemma":[0.99990964,0.000026518775,0.000022758417,0.0000064666065,0.000024150064,0.000010429644],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00009154531,0.00017577458,0.00013465222,0.00021475911,0.00014048802,0.00018711429,0.0001314395,0.00014204206,0.00080427673],"category_scores_gemma":[0.00019127695,0.00015850316,0.0000777595,0.0001668921,0.0001255417,0.00014203557,0.0000626974,0.00013530669,0.0000847753],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00001114731,0.0000027402011,0.00015384996,0.000016087235,0.0000014327829,0.000018795476,0.000007109311,0.000029893716,0.9994382,0.00001608119,0.0000058476303,0.00029874695],"study_design_scores_gemma":[0.0000069740186,0.00010011256,0.01379981,0.0000051477555,0.000010083103,0.000096820826,0.00004304453,0.0006833988,0.9846549,0.00001643102,0.0005802722,0.0000030913038],"about_ca_topic_score_codex":0.001484943,"about_ca_topic_score_gemma":0.002677762,"teacher_disagreement_score":0.001484943,"about_ca_system_score_codex":0.0001493772,"about_ca_system_score_gemma":0.00012741354,"threshold_uncertainty_score":0.0029525757},"labels":[],"label_agreement":null},{"id":"W2096153650","doi":"10.1139/cjp-2013-0620","title":"Amorphous solar cell on multilayer of SnO<sub>2</sub>/ZnO TCO substrate for full spectrum splitting solar cell application","year":2014,"lang":"en","type":"article","venue":"Canadian Journal of Physics","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":false,"route_ca_venue":true,"route_about_ca":false,"ca_institutions":"","funders":"Ministry of Economy, Trade and Industry","keywords":"Solar cell; Optoelectronics; Amorphous solid; Amorphous silicon; Wavelength; Substrate (aquarium); Silicon; Band gap; Solar cell efficiency; Transparent conducting film; Physics; Materials science; Optics; Thin film; Crystalline silicon; Nanotechnology; Crystallography; Chemistry","score_opus":0.0067713658908159936,"score_gpt":0.16999162734092846,"score_spread":0.16322026145011245,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2096153650","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.994383,0.00036652136,0.0024598283,0.000024989042,0.000025072877,0.000011474996,0.00019054378,0.000073576215,0.0024649063],"genre_scores_gemma":[0.9929559,0.00041219246,0.00507517,0.000008378923,0.000005665182,0.0000064993396,0.00022063915,0.000010368062,0.0013049785],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99996376,0.0000014891215,0.0000023531852,0.0000084443045,0.000016689948,0.000007216806],"domain_scores_gemma":[0.99996865,0.0000028844538,0.000005358147,0.0000025424622,0.000014764326,0.0000057909037],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000027705137,0.0001545989,0.00021194355,0.00008675433,0.00014834442,0.00021179729,0.00020468443,0.000107529784,0.0006444237],"category_scores_gemma":[0.000055674976,0.00007972727,0.00017964939,0.0001745049,0.0000484897,0.00014441428,0.000088336106,0.00012340846,0.00013669768],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000030224805,0.00001187093,0.0007772132,0.000057909027,0.000010545696,0.00009847342,0.000011091622,0.0009820904,0.99588805,0.00012125844,0.000120865436,0.001890411],"study_design_scores_gemma":[0.00003427865,0.00037282813,0.014161808,0.000021381997,0.00010627648,0.00040500963,0.00009375361,0.032548316,0.9475551,0.000116737916,0.00457176,0.000012830771],"about_ca_topic_score_codex":0.0029654668,"about_ca_topic_score_gemma":0.00762948,"teacher_disagreement_score":0.0029654668,"about_ca_system_score_codex":0.00018374427,"about_ca_system_score_gemma":0.00017155174,"threshold_uncertainty_score":0.005896449},"labels":[],"label_agreement":null},{"id":"W2096399326","doi":"10.1109/leos.2002.1134048","title":"Amorphous silicon back-plane electronics for OLED displays","year":2003,"lang":"en","type":"article","venue":"","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":5,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"OLED; Materials science; Thin-film transistor; Optoelectronics; Amorphous silicon; Capacitance; Silicon; Transistor; Diode; Amorphous solid; Parasitic capacitance; Active matrix; Electronics; Threshold voltage; Pixel; Electronic circuit; Electrical engineering; Voltage; Crystalline silicon; Optics; Nanotechnology; Engineering; Electrode; Physics","score_opus":0.007440433121227651,"score_gpt":0.18922913278227918,"score_spread":0.18178869966105152,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2096399326","genre_codex":"other","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.29050577,0.1649811,0.1504426,0.0073010963,0.007853126,0.00034879413,0.004275074,0.004026267,0.37026617],"genre_scores_gemma":[0.58434385,0.09808531,0.07223232,0.0013716974,0.00194731,0.00010817011,0.002621417,0.00027933848,0.2390105],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99996936,0.000003363791,0.0000021113397,0.0000059584345,0.000013865486,0.00000530857],"domain_scores_gemma":[0.9999627,0.000010635925,0.0000025433226,0.000004012075,0.0000142252065,0.000006021339],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000071315095,0.0002540476,0.00013019622,0.00016827286,0.0002076729,0.00063806237,0.00018073198,0.00028907458,0.019719487],"category_scores_gemma":[0.00010506727,0.00009168291,0.00011357307,0.00019325757,0.00008845976,0.00030113957,0.00016924074,0.000290235,0.0050200275],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00018961693,0.000069192734,0.0012563411,0.0010879406,0.00003343664,0.0007362353,0.00006594147,0.0031016788,0.65568876,0.031816337,0.040863514,0.265091],"study_design_scores_gemma":[0.00005338368,0.00063719903,0.0027640497,0.00028722797,0.00011138227,0.0014234473,0.00010780827,0.016388029,0.26207504,0.0076493495,0.70847255,0.000030666575],"about_ca_topic_score_codex":0.000320502,"about_ca_topic_score_gemma":0.001096165,"teacher_disagreement_score":0.019719487,"about_ca_system_score_codex":0.00018975469,"about_ca_system_score_gemma":0.00017268086,"threshold_uncertainty_score":0.065968215},"labels":[],"label_agreement":null},{"id":"W2096469016","doi":"10.1117/12.472807","title":"Bi/In as patterning and masking layers for alkaline-base Si anisotropic etching","year":2003,"lang":"en","type":"article","venue":"Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":11,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Simon Fraser University","funders":"","keywords":"Materials science; Photoresist; Silicon; Resist; Etching (microfabrication); Surface micromachining; Laser; Optoelectronics; Isotropic etching; Layer (electronics); Optics; Nanotechnology; Fabrication","score_opus":0.010671483951389607,"score_gpt":0.21694542709587938,"score_spread":0.20627394314448977,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2096469016","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.8851386,0.0022007092,0.10261584,0.0001703944,0.0002898089,0.00021682077,0.0004648682,0.0007623911,0.008140475],"genre_scores_gemma":[0.8550763,0.0014741465,0.13665213,0.00005601964,0.000036498906,0.0001352035,0.00038891326,0.000103653445,0.0060771964],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99985814,0.000008632751,0.000009659652,0.00002500763,0.0000762485,0.000022220092],"domain_scores_gemma":[0.9999143,0.000010004496,0.000021283837,0.000015825706,0.000025644873,0.000012890502],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00010208849,0.00038325635,0.0002818228,0.00017854024,0.00023071888,0.00029367788,0.0006378256,0.0002912398,0.0008340071],"category_scores_gemma":[0.00015445908,0.0003476655,0.00016548054,0.00018672095,0.00011059135,0.00021205553,0.00022924186,0.00033360464,0.0003785735],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000012366902,0.0000034234392,0.000057417972,0.000020506697,0.0000015823535,0.000025636136,0.0000063789653,0.000028593884,0.99842656,0.00009102713,0.000028519264,0.0012979592],"study_design_scores_gemma":[0.0000057650955,0.00004331742,0.00055726257,0.0000020564455,0.000007449604,0.00021505661,0.000007022658,0.0009572777,0.9952207,0.000024279021,0.0029558516,0.0000038632556],"about_ca_topic_score_codex":0.00055824633,"about_ca_topic_score_gemma":0.0011471917,"teacher_disagreement_score":0.0008340071,"about_ca_system_score_codex":0.00021564553,"about_ca_system_score_gemma":0.00019626123,"threshold_uncertainty_score":0.0027900934},"labels":[],"label_agreement":null},{"id":"W2097155384","doi":"10.1109/ccece.2002.1015254","title":"Empirical model for the distribution of electronic states associated with hydrogenated amorphous silicon","year":2003,"lang":"en","type":"article","venue":"","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Regina","funders":"Natural Sciences and Engineering Research Council of Canada; CMC Microsystems","keywords":"Amorphous silicon; Silicon; Materials science; Amorphous solid; Exponential function; Exponential distribution; Density of states; Statistical physics; Distribution function; Distribution (mathematics); Condensed matter physics; Thermodynamics; Mathematics; Physics; Crystalline silicon; Optoelectronics; Crystallography; Chemistry; Statistics; Mathematical analysis","score_opus":0.013154999461334615,"score_gpt":0.21554549435709897,"score_spread":0.20239049489576436,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2097155384","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.40382034,0.00046732364,0.5865915,0.00077357393,0.000036696467,0.00013243975,0.0010286642,0.0006050029,0.006544477],"genre_scores_gemma":[0.97169656,0.000529413,0.020016598,0.00011550917,0.000036607827,0.000194576,0.0008532376,0.000110199544,0.00644732],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99951196,0.00012097553,0.000022268776,0.00012674028,0.00013162877,0.00008639228],"domain_scores_gemma":[0.9976029,0.0012918097,0.00030700528,0.00034086054,0.00039241303,0.00006497916],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0015214614,0.0005612243,0.00073992123,0.001047946,0.00036123794,0.0009975677,0.001985957,0.0013561926,0.0029570565],"category_scores_gemma":[0.005672597,0.0005300655,0.0007027615,0.0008255399,0.0011768809,0.0024393292,0.00044190537,0.0012175934,0.0007002612],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00009226582,0.00010211999,0.0041268924,0.00006252396,0.000046213205,0.00020793652,0.00013884397,0.91802585,0.005539488,0.06403641,0.0008564177,0.006764992],"study_design_scores_gemma":[0.0000070120464,0.000013528853,0.00074331457,0.000006994314,0.000005363228,0.000053765765,0.000013404113,0.9901855,0.00042806123,0.008350516,0.00018225776,0.000010244832],"about_ca_topic_score_codex":0.0031685503,"about_ca_topic_score_gemma":0.0023682658,"teacher_disagreement_score":0.0031685503,"about_ca_system_score_codex":0.0011318922,"about_ca_system_score_gemma":0.0006450487,"threshold_uncertainty_score":0.009892285},"labels":[],"label_agreement":null},{"id":"W2098132431","doi":"10.1109/icm.2000.916454","title":"Effect of front hole channel on leakage characteristics of a-Si:H TFTs","year":2002,"lang":"en","type":"article","venue":"","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Thin-film transistor; Materials science; Leakage (economics); Transistor; Amorphous silicon; Optoelectronics; Silicon; Voltage; Threshold voltage; Amorphous solid; Channel (broadcasting); Electrical engineering; Crystalline silicon; Nanotechnology; Layer (electronics); Chemistry; Crystallography; Engineering","score_opus":0.008482944762696612,"score_gpt":0.1855573045091657,"score_spread":0.17707435974646907,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2098132431","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99735105,0.00030024958,0.0015961677,0.00003689371,0.000017710123,0.000005831758,0.00006123867,0.00007216993,0.0005586522],"genre_scores_gemma":[0.9994622,0.000085492014,0.0002659737,0.000013645237,0.000007699508,0.000001650629,0.000023119826,0.000008568452,0.00013161494],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998499,0.00002075784,0.000008019225,0.00002555572,0.000049002287,0.000046818503],"domain_scores_gemma":[0.9987968,0.000831176,0.0001301344,0.00006561466,0.0001141125,0.00006218726],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00014389482,0.00021072448,0.00021794553,0.00015677801,0.0001837788,0.00039336178,0.00023902164,0.00038375153,0.0009134097],"category_scores_gemma":[0.0009787062,0.0001133664,0.00019668367,0.00013419296,0.00044646132,0.00044425268,0.00016615662,0.0002074554,0.000106065454],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0011182858,0.0000548672,0.003970637,0.00012367473,0.000054977405,0.00076962705,0.00015339754,0.0075975293,0.976453,0.0004398031,0.00011311225,0.009151121],"study_design_scores_gemma":[0.000041736686,0.0012223694,0.008709008,0.000012546766,0.00008606929,0.0005526917,0.00009134249,0.014548003,0.9737428,0.0002056259,0.00076805614,0.00001973887],"about_ca_topic_score_codex":0.0005022319,"about_ca_topic_score_gemma":0.00044910773,"teacher_disagreement_score":0.0009134097,"about_ca_system_score_codex":0.00035184794,"about_ca_system_score_gemma":0.00014898671,"threshold_uncertainty_score":0.0030556917},"labels":[],"label_agreement":null},{"id":"W2098939416","doi":"10.1109/mwscas.2005.1594231","title":"A stable n-channel mirrorable current source for versatile analog design with thin film transistors","year":2005,"lang":"en","type":"article","venue":"","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":3,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Thin-film transistor; Transistor; Materials science; Threshold voltage; Optoelectronics; Channel (broadcasting); Current (fluid); Biasing; Electrical engineering; Current source; Voltage; Amorphous silicon; Electronic engineering; Silicon; Engineering; Nanotechnology; Crystalline silicon","score_opus":0.024105187541795456,"score_gpt":0.21244557472958764,"score_spread":0.18834038718779217,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2098939416","genre_codex":"empirical","genre_gemma":"methods","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"methods","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.66509706,0.0038055037,0.30312178,0.00084891374,0.0006857867,0.00026693102,0.00054320734,0.0033824164,0.022248384],"genre_scores_gemma":[0.920796,0.0007933022,0.07327078,0.00012033219,0.00015991795,0.00009421501,0.00012953008,0.00016070438,0.0044751894],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99988663,0.000009197458,0.000007693256,0.000026013593,0.000057691002,0.000012746217],"domain_scores_gemma":[0.9997818,0.000040860934,0.000054801483,0.00004499163,0.000051894804,0.000025703219],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00012594121,0.00022770111,0.00025807283,0.00018710163,0.000188615,0.0004704812,0.0011314577,0.00034699962,0.00103681],"category_scores_gemma":[0.00038775548,0.00014459823,0.0001861528,0.00018338895,0.00021065296,0.0005622949,0.0002920595,0.00031462748,0.0005317605],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00004375774,0.00001887587,0.000086348235,0.00005291779,0.0000054551283,0.00009675543,0.00002718405,0.00027725036,0.9873683,0.0016575984,0.000440661,0.0099249715],"study_design_scores_gemma":[0.000024409255,0.0002102423,0.00026859978,0.00001041987,0.000013363757,0.00033410618,0.000007848291,0.01173199,0.97963387,0.0007247514,0.007027925,0.000012545985],"about_ca_topic_score_codex":0.00016818159,"about_ca_topic_score_gemma":0.00025857403,"teacher_disagreement_score":0.0011314577,"about_ca_system_score_codex":0.00027071702,"about_ca_system_score_gemma":0.00015476218,"threshold_uncertainty_score":0.0034685135},"labels":[],"label_agreement":null},{"id":"W2099905600","doi":"10.1109/cicc.2003.1249392","title":"Amorphous silicon TFT circuit integration for OLED displays on glass and plastic","year":2004,"lang":"en","type":"article","venue":"","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":8,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Natural Sciences and Engineering Research Council of Canada; University of Waterloo","keywords":"AMOLED; Thin-film transistor; Active matrix; Materials science; Optoelectronics; OLED; Current mirror; Threshold voltage; Transistor; Electronic circuit; Active layer; Backplane; Electrical engineering; Voltage; Layer (electronics); Engineering; Nanotechnology","score_opus":0.012036224412681326,"score_gpt":0.19703288528629667,"score_spread":0.18499666087361535,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2099905600","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.70429915,0.016852442,0.2373567,0.00089891395,0.00040894514,0.00029948566,0.00070424867,0.002044294,0.0371358],"genre_scores_gemma":[0.8415048,0.0060830605,0.14430264,0.0002001609,0.00014936246,0.000090487745,0.00043088672,0.00015193973,0.00708671],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998915,0.000008018548,0.0000061452565,0.000022677366,0.000057653662,0.000013834742],"domain_scores_gemma":[0.99990237,0.000032808533,0.000022047414,0.000010939312,0.000023809764,0.000007955247],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0001128856,0.0002329099,0.00015215571,0.00022490518,0.00030583984,0.0005226536,0.00034491107,0.00030127398,0.0017470563],"category_scores_gemma":[0.00025501833,0.00013152928,0.00025042015,0.00023606535,0.00011251377,0.00053496816,0.00014582308,0.00027325648,0.00036822524],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000040065817,0.000017938428,0.0008226321,0.00021528115,0.000017848566,0.00023602963,0.00003725243,0.0005496003,0.96201146,0.0018591568,0.0004269801,0.033765804],"study_design_scores_gemma":[0.0000144484075,0.00059740985,0.005311353,0.00004085387,0.000060715945,0.0021263827,0.00006452383,0.0068316003,0.94941556,0.0007642285,0.034751385,0.000021562852],"about_ca_topic_score_codex":0.0005545,"about_ca_topic_score_gemma":0.0012116712,"teacher_disagreement_score":0.0017470563,"about_ca_system_score_codex":0.00035911542,"about_ca_system_score_gemma":0.00021555444,"threshold_uncertainty_score":0.0058444142},"labels":[],"label_agreement":null},{"id":"W2101131190","doi":"10.1557/proc-1245-a18-01","title":"Optimization of the <i>a</i>-SiC <i>p</i>-layer in <i>a</i>-Si:H-based <i>n-i-p</i> Photodiodes","year":2010,"lang":"en","type":"article","venue":"MRS Proceedings","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":6,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"University of Waterloo","keywords":"Materials science; Photodiode; Quantum efficiency; Optoelectronics; Amorphous silicon; Doping; Wavelength; Analytical Chemistry (journal); Silicon; Crystalline silicon","score_opus":0.006632319274736178,"score_gpt":0.1842998779524988,"score_spread":0.17766755867776263,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2101131190","genre_codex":"empirical","genre_gemma":"methods","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"methods","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.98406476,0.0012974987,0.00888668,0.00018063624,0.000040214436,0.00005322586,0.00057077373,0.0002195528,0.0046864673],"genre_scores_gemma":[0.99153495,0.00042917367,0.0062947967,0.000033599965,0.0000068876247,0.00003428395,0.00020261713,0.000042948788,0.0014206766],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.999864,0.000010243126,0.000010093115,0.00003692091,0.000054235195,0.000024413566],"domain_scores_gemma":[0.999858,0.000024077,0.00004498802,0.000012456248,0.00004677073,0.000013712775],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00018776985,0.0005030893,0.00032889424,0.00019186255,0.00033373153,0.0007025091,0.0006598255,0.0004106917,0.0010426233],"category_scores_gemma":[0.00033879562,0.00033209386,0.0002679236,0.00027065043,0.00013209324,0.0004398966,0.00022018461,0.0002803673,0.00038157753],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00010999528,0.00003788267,0.0008982931,0.0001682715,0.000042856376,0.00006614351,0.00003353118,0.004708233,0.9897911,0.0003147181,0.00036535805,0.003463734],"study_design_scores_gemma":[0.00001985863,0.00020659507,0.0026860465,0.000008782773,0.000049747836,0.00008060029,0.000038671744,0.010485672,0.98466176,0.00006124693,0.0016905492,0.000010449943],"about_ca_topic_score_codex":0.0027884156,"about_ca_topic_score_gemma":0.007953183,"teacher_disagreement_score":0.0027884156,"about_ca_system_score_codex":0.0008829936,"about_ca_system_score_gemma":0.0005578891,"threshold_uncertainty_score":0.0064066052},"labels":[],"label_agreement":null},{"id":"W2101160754","doi":"10.1889/1.2720321","title":"P‐26: Amorphous Silicon Enables Large Amoled Displays for HDTV","year":2005,"lang":"en","type":"article","venue":"SID Symposium Digest of Technical Papers","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":9,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"IGNIS Innovation (Canada)","funders":"","keywords":"AMOLED; OLED; Brightness; Pixel; Materials science; Optoelectronics; Computer science; Computer graphics (images); Thin-film transistor; Artificial intelligence; Optics; Physics; Nanotechnology; Active matrix; Layer (electronics)","score_opus":0.005616774785994085,"score_gpt":0.20718683014589395,"score_spread":0.20157005535989986,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2101160754","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9491639,0.0007730092,0.014988499,0.00022492098,0.00013527156,0.000033869044,0.00036840135,0.0012023932,0.033109628],"genre_scores_gemma":[0.9879715,0.00033108852,0.005524898,0.00003519104,0.000029261164,0.0000132083605,0.00014662583,0.00006150116,0.0058869305],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999552,0.0000023220066,0.000002045969,0.000010666002,0.000020760659,0.000009084056],"domain_scores_gemma":[0.99994934,0.000009126316,0.000008346235,0.000009281447,0.000010468763,0.00001339016],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00005977507,0.00013549623,0.00008802825,0.00013838348,0.00014465602,0.00038031663,0.0002538677,0.00019540398,0.0024935282],"category_scores_gemma":[0.00008925498,0.00008676036,0.00008729265,0.000116181836,0.00016370976,0.00025210812,0.00023582533,0.0002448264,0.0006749681],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000052010317,0.000018512017,0.00019371227,0.000027728174,0.0000033870926,0.00021384895,0.000022405631,0.00032840666,0.992634,0.0011911367,0.00070950657,0.0046053175],"study_design_scores_gemma":[0.000038415772,0.00027083434,0.0025508965,0.000009941488,0.000010327275,0.0006666362,0.00003423028,0.005481593,0.96585274,0.00073702773,0.024333157,0.000014133478],"about_ca_topic_score_codex":0.00021735368,"about_ca_topic_score_gemma":0.00040422575,"teacher_disagreement_score":0.0024935282,"about_ca_system_score_codex":0.00010787742,"about_ca_system_score_gemma":0.00010748519,"threshold_uncertainty_score":0.00834167},"labels":[],"label_agreement":null},{"id":"W2102139604","doi":"10.1149/1.3568842","title":"Nanobonding for Multi-Junction Solar Cells at Room Temperature","year":2011,"lang":"en","type":"article","venue":"ECS Transactions","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":17,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McMaster University","funders":"Natural Sciences and Engineering Research Council of Canada; McMaster University","keywords":"Annealing (glass); Materials science; Amorphous solid; Wafer; Fabrication; Optoelectronics; Thermal stability; Silicon; Amorphous silicon; Composite material; Chemical engineering; Chemistry; Crystalline silicon; Crystallography","score_opus":0.032477033512256615,"score_gpt":0.20841889758294407,"score_spread":0.17594186407068746,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2102139604","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9849636,0.0015543656,0.0100036515,0.00008988726,0.000075005344,0.000027523356,0.000112571346,0.00017513415,0.0029980973],"genre_scores_gemma":[0.98789257,0.0005422501,0.008533896,0.000029362614,0.000009267332,0.000039087237,0.00008003493,0.00004293597,0.0028306616],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.999907,0.0000045942884,0.0000036144165,0.000028117622,0.000046394827,0.000010346469],"domain_scores_gemma":[0.9999198,0.00002215504,0.00001773639,0.000011373786,0.000021081818,0.000007861759],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000071635164,0.00023372944,0.0002554934,0.0001115353,0.00026417387,0.00022358747,0.0003477742,0.00024597778,0.0019270629],"category_scores_gemma":[0.00015565875,0.00022679067,0.0001468897,0.00010453141,0.000117353164,0.00036089544,0.00029575825,0.00036305859,0.000433271],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000013942668,0.000013354716,0.00008958792,0.000061055965,0.000004907077,0.000030498668,0.000032385415,0.0003512411,0.9961371,0.00014309639,0.00008363056,0.0030392848],"study_design_scores_gemma":[0.0000062261925,0.00012959441,0.0009768129,0.000005383914,0.000008368692,0.00008846197,0.000030962612,0.0039781397,0.99310255,0.000081157756,0.0015866499,0.0000056415074],"about_ca_topic_score_codex":0.00051113364,"about_ca_topic_score_gemma":0.002051202,"teacher_disagreement_score":0.0019270629,"about_ca_system_score_codex":0.00031606876,"about_ca_system_score_gemma":0.00012337293,"threshold_uncertainty_score":0.0064466},"labels":[],"label_agreement":null},{"id":"W2102146483","doi":"10.1109/led.2011.2104937","title":"A Study of Parasitic Series Resistance Components in In–Ga–Zn–Oxide (a-IGZO) Thin-Film Transistors","year":2011,"lang":"en","type":"article","venue":"IEEE Electron Device Letters","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":18,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"IGNIS Innovation (Canada)","funders":"","keywords":"Thin-film transistor; Channel (broadcasting); Equivalent series resistance; Parasitic element; Materials science; Optoelectronics; Transistor; Electrode; Oxide; Series (stratigraphy); Channel length modulation; Electrical engineering; Electronic engineering; MOSFET; Nanotechnology; Layer (electronics); Voltage; Engineering; Chemistry; Metallurgy","score_opus":0.024616426803594924,"score_gpt":0.21594380537282334,"score_spread":0.19132737856922843,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2102146483","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9803288,0.00042480504,0.017350866,0.00002590848,0.000010009588,0.000023771014,0.00010759782,0.00014886881,0.0015792834],"genre_scores_gemma":[0.9959252,0.00018852693,0.0034641977,0.000004725273,0.000006101554,0.0000072819767,0.00006364857,0.000017162536,0.00032316413],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99991167,0.000013676577,0.0000047826597,0.000025565516,0.000031863405,0.000012546119],"domain_scores_gemma":[0.9997421,0.00013795898,0.000041408817,0.000027546574,0.000042506254,0.000008497733],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00016672366,0.0002765352,0.0001672024,0.0003183393,0.0001414313,0.00016852624,0.00034393682,0.00019288882,0.00032996017],"category_scores_gemma":[0.0006887869,0.00015005474,0.0002446185,0.00035433297,0.00019652188,0.00032464377,0.00006171195,0.00016363345,0.00005892853],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00010278835,0.000052241092,0.006856126,0.0002436482,0.00007051179,0.0006593736,0.00025890546,0.01914702,0.9589404,0.0015650261,0.00015469301,0.011949294],"study_design_scores_gemma":[0.000026404423,0.00046618446,0.060100187,0.000039689516,0.00018275519,0.00092107774,0.00016280229,0.30236408,0.6315979,0.0010057789,0.0030809226,0.0000521886],"about_ca_topic_score_codex":0.0017151372,"about_ca_topic_score_gemma":0.0026268635,"teacher_disagreement_score":0.0017151372,"about_ca_system_score_codex":0.00023327438,"about_ca_system_score_gemma":0.00016605415,"threshold_uncertainty_score":0.0034102798},"labels":[],"label_agreement":null},{"id":"W2102571796","doi":"10.1364/oe.22.0000a1","title":"Synergistic plasmonic and photonic crystal light-trapping: Architectures for optical up-conversion in thin-film solar cells","year":2013,"lang":"en","type":"article","venue":"Optics Express","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":33,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Toronto","funders":"Natural Sciences and Engineering Research Council of Canada; U.S. Department of Energy","keywords":"Materials science; Photonic crystal; Optoelectronics; Plasmon; Optics; Plasmonic solar cell; Energy conversion efficiency; Band gap; Silicon; Monocrystalline silicon; Physics","score_opus":0.007732954839944266,"score_gpt":0.19184664307819232,"score_spread":0.18411368823824806,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2102571796","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.95756626,0.0011775047,0.032618698,0.0001521235,0.00004336135,0.00003463698,0.00004092334,0.00024551287,0.008121056],"genre_scores_gemma":[0.97871894,0.00028947444,0.019733159,0.000021341932,0.00000481255,0.00002043835,0.00001647545,0.000012005352,0.0011834521],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999455,0.0000059776776,0.0000025874717,0.0000072764947,0.000027222046,0.00001146003],"domain_scores_gemma":[0.99995255,0.000016450454,0.000008860181,0.0000051243105,0.000010293959,0.000006775504],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00007740867,0.00019806557,0.00020791481,0.00014191966,0.00018877657,0.00030688138,0.00046615172,0.00024024489,0.00072966947],"category_scores_gemma":[0.00015088302,0.00016877502,0.00019427722,0.00013485189,0.00022309963,0.00028301452,0.0003095941,0.00024179071,0.00017600483],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00006248842,0.0000699843,0.00032919677,0.00013579588,0.000021508518,0.00013700667,0.000045911802,0.016915398,0.9695257,0.003596267,0.0001709237,0.008989807],"study_design_scores_gemma":[0.00006407541,0.00022143267,0.0008226421,0.000015433325,0.000045268367,0.00024343941,0.00004945847,0.17952003,0.8143693,0.0014810921,0.0031459911,0.0000219261],"about_ca_topic_score_codex":0.0005891532,"about_ca_topic_score_gemma":0.0016479172,"teacher_disagreement_score":0.00072966947,"about_ca_system_score_codex":0.00023635497,"about_ca_system_score_gemma":0.00020064705,"threshold_uncertainty_score":0.0024410486},"labels":[],"label_agreement":null},{"id":"W2103487866","doi":"10.1103/physrevb.68.125209","title":"Energy landscape of relaxed amorphous silicon","year":2003,"lang":"en","type":"article","venue":"Physical review. B, Condensed matter","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":38,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Université de Montréal","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Energy landscape; Relaxation (psychology); Activation energy; Amorphous silicon; Silicon; Atom (system on chip); Amorphous solid; Energy (signal processing); Chemical physics; Materials science; Physics; Statistical physics; Engineering physics; Computer science; Crystalline silicon; Chemistry; Crystallography; Optoelectronics; Thermodynamics; Quantum mechanics; Neuroscience; Physical chemistry; Parallel computing; Biology","score_opus":0.007540241109202653,"score_gpt":0.2267550329908987,"score_spread":0.21921479188169604,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2103487866","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.98764604,0.00016412164,0.006658315,0.00025310874,0.0000068812647,0.000011112806,0.00020077599,0.00006914641,0.0049906154],"genre_scores_gemma":[0.9970536,0.00009125843,0.0017322433,0.0000326744,0.0000039613756,0.000022382745,0.00025541516,0.000022086437,0.00078632147],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9998956,0.00002867044,0.000003754372,0.000016823744,0.00002375902,0.000031518244],"domain_scores_gemma":[0.99976,0.00011213726,0.000029091227,0.000030881984,0.000032958458,0.000034954846],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00024970132,0.00032808966,0.0004982798,0.0006598573,0.000595352,0.0009010891,0.0006854182,0.0007194874,0.0023316757],"category_scores_gemma":[0.0008002624,0.00029564943,0.00044797556,0.0004364542,0.0007986363,0.0008616089,0.00037743564,0.00039390835,0.00015922799],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00019550243,0.00005365637,0.0021611995,0.0000417593,0.00006891134,0.00029964306,0.00006001188,0.9637824,0.012855542,0.01845508,0.0003963509,0.001629884],"study_design_scores_gemma":[0.00003571898,0.0000909009,0.0015529133,0.0000052787946,0.000020185169,0.0000437689,0.000041831783,0.9883344,0.0013225576,0.008236193,0.00030091696,0.0000151831855],"about_ca_topic_score_codex":0.0044082147,"about_ca_topic_score_gemma":0.0032542509,"teacher_disagreement_score":0.0044082147,"about_ca_system_score_codex":0.0010057843,"about_ca_system_score_gemma":0.00043873762,"threshold_uncertainty_score":0.008765101},"labels":[],"label_agreement":null},{"id":"W2105634449","doi":"10.1116/1.3694010","title":"Dopant depletion in the near surface region of thermally prepared silicon (100) in UHV","year":2012,"lang":"en","type":"article","venue":"Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":38,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Alberta; National Institute for Nanotechnology","funders":"Canadian Institute for Advanced Research","keywords":"Dopant; Dangling bond; Silicon; Doping; Analytical Chemistry (journal); Scanning tunneling microscope; Materials science; Hydrogen; Chemistry; Optoelectronics; Nanotechnology","score_opus":0.01646767485881536,"score_gpt":0.2196526733202979,"score_spread":0.20318499846148252,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2105634449","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99893636,0.00013965825,0.00036748542,0.000010490702,0.000003959329,0.0000030622355,0.00013390592,0.000012881482,0.00039229786],"genre_scores_gemma":[0.99862576,0.00009118814,0.0006439187,0.0000075176717,0.0000019173872,0.000005981362,0.0001565329,0.000007751598,0.000459359],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99992526,0.000005817559,0.000003895989,0.000021998727,0.000025273048,0.000017679324],"domain_scores_gemma":[0.999926,0.000017684817,0.000021445494,0.000007204967,0.000017595656,0.0000099842155],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00007144074,0.00015484396,0.00019662047,0.00016021397,0.00016161003,0.00026352133,0.00029096394,0.00024858772,0.001202933],"category_scores_gemma":[0.00015096404,0.00017697482,0.000096439144,0.00020735257,0.00022896248,0.00017782736,0.0001240413,0.00019121093,0.00014398419],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00005533136,0.0000073155657,0.00035979817,0.000019991532,0.000005664672,0.000036694844,0.000027315647,0.00018481979,0.99876875,0.000044925724,0.000020344169,0.00046901673],"study_design_scores_gemma":[0.000004450417,0.00013635527,0.005566907,0.000004936057,0.000009605735,0.000056954254,0.00005039659,0.0015891782,0.9921564,0.000027493412,0.00039274382,0.0000045488528],"about_ca_topic_score_codex":0.0014918554,"about_ca_topic_score_gemma":0.0026824153,"teacher_disagreement_score":0.0014918554,"about_ca_system_score_codex":0.00028079798,"about_ca_system_score_gemma":0.00010523421,"threshold_uncertainty_score":0.004024267},"labels":[],"label_agreement":null},{"id":"W2106155838","doi":"10.1149/05301.0271ecst","title":"(Invited) Indirect Conversion Digital X-Ray Imager Using an Amorphous Selenium Photoconductor","year":2013,"lang":"en","type":"article","venue":"ECS Transactions","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Photocurrent; Pixel; Optoelectronics; Dark current; Optics; Materials science; Sensitivity (control systems); Wavelength; Detector; Quantum efficiency; Photoresistor; Photodetector; Physics; Electronic engineering; Engineering","score_opus":0.017112151115154402,"score_gpt":0.20124983430711457,"score_spread":0.18413768319196017,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2106155838","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.8180225,0.0011339253,0.11927328,0.00060689787,0.00038166103,0.00014288921,0.0009816338,0.006685109,0.052772082],"genre_scores_gemma":[0.80367225,0.00044113994,0.1255971,0.00021697284,0.00006821541,0.00008449128,0.00047894288,0.00033456046,0.069106296],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.999851,0.000010672685,0.000006951687,0.00004955477,0.00006249232,0.00001937061],"domain_scores_gemma":[0.99984837,0.00003209628,0.000014875298,0.000031651514,0.000057072786,0.000015918737],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00020440007,0.00029363082,0.0002068226,0.0002855291,0.00019830387,0.0004957008,0.00046434934,0.00029965176,0.010946539],"category_scores_gemma":[0.00021359327,0.00017165286,0.00017250971,0.00019938644,0.00019880498,0.00032469237,0.0003692487,0.00034864678,0.0024043052],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00030811652,0.00003741319,0.0016025506,0.00006967548,0.000018030396,0.00033215867,0.0000646519,0.00012921622,0.9583635,0.0008343519,0.002057957,0.036182303],"study_design_scores_gemma":[0.000039451596,0.00030382228,0.0046607614,0.000007714225,0.000036344027,0.0008941014,0.00005477604,0.003016266,0.9723794,0.0001284928,0.018465402,0.000013473208],"about_ca_topic_score_codex":0.0004290962,"about_ca_topic_score_gemma":0.0013001591,"teacher_disagreement_score":0.010946539,"about_ca_system_score_codex":0.00020901438,"about_ca_system_score_gemma":0.00015174496,"threshold_uncertainty_score":0.036619842},"labels":[],"label_agreement":null},{"id":"W2106220925","doi":"10.1109/newcas.2005.1496658","title":"A Low-Power Driving Scheme for a-Si:H Active-Matrix Organic Light-Emitting Diode Displays","year":2005,"lang":"en","type":"article","venue":"","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"AMOLED; OLED; Active matrix; Capacitance; Materials science; Optoelectronics; Diode; Luminance; Power (physics); Threshold voltage; Voltage; Low-power electronics; Light-emitting diode; Metastability; Computer science; Electrical engineering; Electronic engineering; Power consumption; Thin-film transistor; Engineering; Optics; Physics; Nanotechnology; Electrode; Transistor","score_opus":0.005101942120521469,"score_gpt":0.21530663148362475,"score_spread":0.21020468936310327,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2106220925","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.84657747,0.0006721596,0.14151053,0.0004215495,0.00012245921,0.00024378228,0.00041100438,0.0019936506,0.008047463],"genre_scores_gemma":[0.9424355,0.00018431693,0.0535047,0.00007956159,0.000041987598,0.000054618926,0.00008884825,0.000047705766,0.0035625936],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999386,0.0000057982343,0.0000034082616,0.00001519938,0.00002889823,0.000008121138],"domain_scores_gemma":[0.99994385,0.0000150290725,0.000010087588,0.000008707962,0.000013926834,0.000008372608],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00006275537,0.00014309262,0.000091036396,0.00014203096,0.0002235131,0.00021302523,0.0005929574,0.00021300289,0.0012593246],"category_scores_gemma":[0.000101703896,0.000120010074,0.00011064536,0.000105368366,0.000118792275,0.00024371406,0.00014431516,0.00024000701,0.00038360653],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000038559785,0.000025881864,0.00018400844,0.000034903165,0.0000037123502,0.00006440949,0.000023904646,0.00018918076,0.9848588,0.00079408643,0.00028911457,0.013493412],"study_design_scores_gemma":[0.000020560203,0.0002575847,0.0010919073,0.0000030003819,0.0000068292643,0.00028685626,0.0000111837635,0.0076392903,0.9841972,0.00019802418,0.0062772306,0.000010348815],"about_ca_topic_score_codex":0.0002497425,"about_ca_topic_score_gemma":0.00045130157,"teacher_disagreement_score":0.0012593246,"about_ca_system_score_codex":0.00016727782,"about_ca_system_score_gemma":0.00012223344,"threshold_uncertainty_score":0.0042128563},"labels":[],"label_agreement":null},{"id":"W2106911118","doi":"10.1109/mwsym.2003.1210909","title":"Neuro-Space Mapping technique for nonlinear device modeling and large signal simulation","year":2003,"lang":"en","type":"article","venue":"","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":44,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Ottawa; Carleton University","funders":"","keywords":"Space mapping; MESFET; Computer science; Nonlinear system; Harmonic balance; SIGNAL (programming language); Artificial neural network; Electronic engineering; Space (punctuation); Voltage; Artificial intelligence; Algorithm; Transistor; Engineering; Electrical engineering; Physics","score_opus":0.022858796903506395,"score_gpt":0.23771873252752293,"score_spread":0.21485993562401653,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2106911118","genre_codex":"methods","genre_gemma":"methods","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"methods","genre_consensus":"methods","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.00279652,0.00010922572,0.9951521,0.00007500362,0.000018183206,0.00001323009,0.000010239052,0.00012715739,0.001698348],"genre_scores_gemma":[0.44376245,0.0005421855,0.5491088,0.00009520205,0.000060697497,0.0004235758,0.00007163284,0.000072224,0.0058634183],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9998934,0.000041612882,0.0000051308725,0.0000094966435,0.000044234457,0.0000061026],"domain_scores_gemma":[0.9998159,0.000101151825,0.000013787241,0.000024671719,0.000037024805,0.000007453558],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0003727935,0.00047007194,0.00034221596,0.00026689435,0.00028182735,0.00044675486,0.00047438737,0.0006146134,0.0016675085],"category_scores_gemma":[0.0007586335,0.00024294383,0.00050966634,0.00027562343,0.00046230468,0.0005724964,0.0004927675,0.0010055423,0.00032760054],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000022661712,0.000014263341,0.00016159115,0.00004518939,0.00003004678,0.00005363937,0.00005125138,0.92203164,0.0036056035,0.036376655,0.00056676223,0.037040718],"study_design_scores_gemma":[0.000001388874,0.0000071684926,0.00002217634,0.000002013219,0.0000014105021,0.0000068510994,0.000001960684,0.99519795,0.00042068676,0.0036823093,0.00065430073,0.0000018316989],"about_ca_topic_score_codex":0.002252401,"about_ca_topic_score_gemma":0.0018364892,"teacher_disagreement_score":0.002252401,"about_ca_system_score_codex":0.00037695453,"about_ca_system_score_gemma":0.00050004455,"threshold_uncertainty_score":0.005578339},"labels":[],"label_agreement":null},{"id":"W2107985063","doi":"10.1109/ted.2003.818156","title":"Above-threshold parameter extraction and modeling for amorphous silicon thin-film transistors","year":2003,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":127,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Thin-film transistor; Amorphous silicon; Materials science; Threshold voltage; Optoelectronics; Transistor; Extraction (chemistry); Saturation (graph theory); Amorphous solid; Fabrication; Silicon; Electron mobility; Band gap; Contact resistance; Oxide thin-film transistor; Electronic engineering; Voltage; Layer (electronics); Crystalline silicon; Electrical engineering; Nanotechnology; Engineering","score_opus":0.017928914903172742,"score_gpt":0.24111920915638876,"score_spread":0.22319029425321602,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2107985063","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.11548708,0.0016113567,0.87356883,0.00019434864,0.00005170957,0.000114989525,0.0007369527,0.0012259082,0.0070087756],"genre_scores_gemma":[0.90494525,0.0020324034,0.086531825,0.000055180557,0.00004576348,0.0002578984,0.0006695952,0.00022022978,0.0052418425],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9998516,0.000016724687,0.000009462436,0.00002092475,0.00008717748,0.0000142110575],"domain_scores_gemma":[0.99985206,0.00006814887,0.000021957589,0.000023140581,0.000029586217,0.0000051476086],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00016736062,0.00064016075,0.00046487706,0.00045816723,0.0002904318,0.0004900038,0.0009552081,0.00067346287,0.0010061316],"category_scores_gemma":[0.00074068416,0.00031431566,0.00069635606,0.00034510018,0.00025150648,0.0008958529,0.00021441885,0.00047303975,0.00047678984],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000058294645,0.00003836892,0.0010348317,0.00020597749,0.000050210678,0.00043964747,0.00017040133,0.8181742,0.14536874,0.0117567945,0.0006950375,0.022007484],"study_design_scores_gemma":[0.000006067711,0.000032088334,0.00029374182,0.000011982921,0.000013229952,0.000096220174,0.00001804554,0.9737483,0.020240648,0.003436614,0.0020934232,0.000009612308],"about_ca_topic_score_codex":0.003148509,"about_ca_topic_score_gemma":0.002749525,"teacher_disagreement_score":0.003148509,"about_ca_system_score_codex":0.0006454819,"about_ca_system_score_gemma":0.00052393,"threshold_uncertainty_score":0.0062603354},"labels":[],"label_agreement":null},{"id":"W2108411461","doi":"10.1109/ccece.1997.608315","title":"Analog circuit design using amorphous silicon thin film transistors","year":2002,"lang":"en","type":"article","venue":"","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":5,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Thin-film transistor; Amplifier; Electronic circuit; Materials science; Amorphous silicon; Transistor; Optoelectronics; Biasing; Threshold voltage; Spice; Logic gate; Differential amplifier; Amorphous solid; Electrical engineering; Silicon; Electronic engineering; Voltage; CMOS; Crystalline silicon; Engineering; Nanotechnology; Chemistry","score_opus":0.0573610550077693,"score_gpt":0.20009849548465075,"score_spread":0.14273744047688144,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2108411461","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.06740608,0.0016547709,0.8968381,0.0005525245,0.0003439866,0.00028151515,0.00036686234,0.00460301,0.027953038],"genre_scores_gemma":[0.7809805,0.0011792873,0.20243496,0.0002635419,0.0001416478,0.00017067259,0.0002598731,0.00016075463,0.014408744],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998275,0.000026960282,0.00001138134,0.000035215424,0.00007853664,0.000020419644],"domain_scores_gemma":[0.9997559,0.0000805963,0.00002438275,0.000028720917,0.00009882854,0.000011586706],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00014341732,0.00031606876,0.00018376985,0.0002019759,0.00023212268,0.00085908646,0.00071703,0.00035897095,0.0072792056],"category_scores_gemma":[0.0005716071,0.00017417375,0.00022472511,0.00021399364,0.00018886893,0.00046054838,0.00017845958,0.00035883667,0.001247467],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00039629926,0.00011515557,0.0012573932,0.0010122221,0.00021195142,0.00069390365,0.0003505734,0.099787764,0.5736856,0.03662223,0.010001547,0.27586538],"study_design_scores_gemma":[0.00014659466,0.0013326196,0.0009341252,0.000109432636,0.00020410011,0.0009874222,0.00012079945,0.5583056,0.3343502,0.0145270005,0.08894488,0.00003709786],"about_ca_topic_score_codex":0.0007109166,"about_ca_topic_score_gemma":0.0010516869,"teacher_disagreement_score":0.0072792056,"about_ca_system_score_codex":0.00039596492,"about_ca_system_score_gemma":0.00025633076,"threshold_uncertainty_score":0.024351418},"labels":[],"label_agreement":null},{"id":"W2108787423","doi":"10.1109/smelec.2002.1217766","title":"a-Si:H back-plane electronics for medical imaging and OLED displays","year":2004,"lang":"en","type":"article","venue":"","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Natural Sciences and Engineering Research Council of Canada; University of Waterloo","keywords":"Active matrix; OLED; AMOLED; Thin-film transistor; Pixel; Materials science; Optoelectronics; Flat panel display; Backplane; Active layer; Electronic circuit; Threshold voltage; Transistor; Amorphous silicon; Integrated circuit; Computer science; Silicon; Voltage; Electrical engineering; Layer (electronics); Engineering; Crystalline silicon; Artificial intelligence; Nanotechnology","score_opus":0.0036774033036184174,"score_gpt":0.19705817917752136,"score_spread":0.19338077587390295,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2108787423","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.24864574,0.09880645,0.5055917,0.0045992336,0.0019102221,0.0007505194,0.001872958,0.0035015729,0.1343216],"genre_scores_gemma":[0.5224121,0.056674086,0.37454677,0.0015494612,0.00091264246,0.0002036196,0.0010237627,0.00019277341,0.04248474],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99991286,0.000012210216,0.0000057651787,0.00001377164,0.00004901168,0.0000064846913],"domain_scores_gemma":[0.99983156,0.000090233305,0.00002002105,0.000013944486,0.00003173888,0.000012518749],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00019310377,0.0003149309,0.00012178017,0.0002489689,0.00024604064,0.0006411634,0.00030299998,0.0006317974,0.004016082],"category_scores_gemma":[0.0003066679,0.00016213932,0.00018087402,0.000229888,0.00016289677,0.00042967434,0.00015699283,0.00031609586,0.0015966037],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00010429122,0.00006577515,0.0016404248,0.00077397004,0.00003193447,0.00047199108,0.00006828297,0.0010001466,0.79590386,0.012028331,0.005923356,0.18198757],"study_design_scores_gemma":[0.000049701055,0.0013245533,0.006217101,0.00019729904,0.00007364397,0.005824057,0.00016380909,0.015432888,0.68764496,0.005352103,0.277669,0.000050946874],"about_ca_topic_score_codex":0.00027128987,"about_ca_topic_score_gemma":0.0007469271,"teacher_disagreement_score":0.004016082,"about_ca_system_score_codex":0.00024405311,"about_ca_system_score_gemma":0.00024659748,"threshold_uncertainty_score":0.013435125},"labels":[],"label_agreement":null},{"id":"W2108848490","doi":"10.1016/s0022-3093(01)00728-1","title":"Optical dispersion relationships in amorphous silicon grown by molecular beam epitaxy","year":2001,"lang":"en","type":"article","venue":"Journal of Non-Crystalline Solids","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":35,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Institute for Microstructural Sciences; National Research Council Canada; University of Regina","funders":"Natural Sciences and Engineering Research Council of Canada; CMC Microsystems","keywords":"Molecular beam epitaxy; Molar absorptivity; Specular reflection; Refractive index; Materials science; Amorphous silicon; Transmittance; Dispersion (optics); Amorphous solid; Attenuation coefficient; Silicon; Optics; Epitaxy; Optoelectronics; Crystalline silicon; Chemistry; Crystallography; Physics; Nanotechnology","score_opus":0.009161991691668753,"score_gpt":0.21416210631498422,"score_spread":0.20500011462331547,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2108848490","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99078673,0.0015611249,0.002535665,0.000118509604,0.000015064866,0.000008061635,0.00018593838,0.00008936646,0.004699374],"genre_scores_gemma":[0.9970703,0.00034417916,0.00082643185,0.000009282036,0.000004640281,0.0000031614647,0.00007264037,0.000012578371,0.0016567792],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998832,0.000014029057,0.0000067691703,0.000025280084,0.000052194755,0.000018489765],"domain_scores_gemma":[0.9992231,0.0004503608,0.00012656345,0.000043829186,0.00014011904,0.000016006894],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00023323657,0.000170099,0.0001748475,0.0007249836,0.00026849948,0.000535825,0.00026240715,0.00034684318,0.0011337007],"category_scores_gemma":[0.0011182602,0.00018005907,0.000105846004,0.0005826173,0.00023042805,0.0005017768,0.00018937512,0.00037301445,0.0003003385],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0004091484,0.00007589554,0.0060574734,0.00011921509,0.000031938664,0.0002655229,0.00042584486,0.009303396,0.9631794,0.006599943,0.000600703,0.012931578],"study_design_scores_gemma":[0.000045514458,0.000328654,0.019540392,0.000045318036,0.000041248495,0.00030204924,0.00018176551,0.11256341,0.8617982,0.0017812112,0.0033366801,0.000035473447],"about_ca_topic_score_codex":0.0033391945,"about_ca_topic_score_gemma":0.0057253614,"teacher_disagreement_score":0.0033391945,"about_ca_system_score_codex":0.00063473044,"about_ca_system_score_gemma":0.00021172765,"threshold_uncertainty_score":0.00663954},"labels":[],"label_agreement":null},{"id":"W2108970415","doi":"10.1109/pvsc.2009.5411478","title":"Protocrystalline silicon solar cells on transparent plastic substrates","year":2009,"lang":"en","type":"article","venue":"","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":3,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Materials science; Silane; Open-circuit voltage; Solar cell; Silicon; Substrate (aquarium); Amorphous silicon; Optoelectronics; Polymer solar cell; Fabrication; Layer (electronics); Microcrystalline; Amorphous solid; Short circuit; Quantum dot solar cell; Deposition (geology); Crystalline silicon; Voltage; Composite material; Chemistry; Crystallography; Electrical engineering","score_opus":0.016015581750767477,"score_gpt":0.21037123428845708,"score_spread":0.1943556525376896,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2108970415","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9913361,0.0008972375,0.0032580192,0.00007480063,0.000038549482,0.000019711448,0.00029141514,0.000059383434,0.0040247208],"genre_scores_gemma":[0.98667103,0.0012155161,0.0064716926,0.000040775463,0.00001552816,0.000020425636,0.0004171328,0.000025906056,0.0051220087],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998926,0.000007239688,0.000005646599,0.000023891233,0.00004884723,0.0000217416],"domain_scores_gemma":[0.9998852,0.000035632485,0.0000280554,0.000017487508,0.000023621862,0.000010084227],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000076533826,0.00022676581,0.00018939155,0.000108959444,0.00020290763,0.00032148894,0.0002958561,0.00016523505,0.0022468977],"category_scores_gemma":[0.00019182268,0.00015317106,0.00017100105,0.00015873079,0.00010716587,0.00029353792,0.00020677627,0.00030095302,0.0006588142],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000022739743,0.0000074917807,0.00018555649,0.000053352116,0.000005751756,0.00009620118,0.00001909557,0.00033109915,0.9976267,0.00010580376,0.00006370431,0.00148265],"study_design_scores_gemma":[0.000004687109,0.00007316464,0.0012470644,0.000005741617,0.000008301324,0.00008746937,0.00002450498,0.0011771206,0.9958319,0.000040614046,0.0014961484,0.000003364145],"about_ca_topic_score_codex":0.0010605863,"about_ca_topic_score_gemma":0.0028111315,"teacher_disagreement_score":0.0022468977,"about_ca_system_score_codex":0.00019148004,"about_ca_system_score_gemma":0.00012884606,"threshold_uncertainty_score":0.007516563},"labels":[],"label_agreement":null},{"id":"W2109345356","doi":"10.1109/leos.2006.279204","title":"Reducing Charge Injection in Active-Matrix a-Si TFT Pixels","year":2006,"lang":"en","type":"article","venue":"","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":2,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Thin-film transistor; Active matrix; Pixel; Materials science; Transistor; Optoelectronics; Silicon; Voltage; Threshold voltage; Charge (physics); Amorphous solid; Logic gate; Electronic engineering; Electrical engineering; Computer science; Engineering; Nanotechnology; Physics; Artificial intelligence; Chemistry","score_opus":0.006522845229625524,"score_gpt":0.20745706771365457,"score_spread":0.20093422248402906,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2109345356","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.89411265,0.0014382981,0.1001005,0.00022715896,0.00010273148,0.000066881425,0.000115019466,0.0013203594,0.0025163468],"genre_scores_gemma":[0.9505333,0.00045636293,0.046110038,0.00007035941,0.000035425728,0.000022597214,0.00006802748,0.000082512815,0.0026213566],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99992096,0.000005546193,0.00000454255,0.000016468455,0.000040525323,0.000011921798],"domain_scores_gemma":[0.99973816,0.000104347746,0.00005150457,0.000024283117,0.000060270726,0.000021442285],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00010518345,0.00027062205,0.00019275665,0.00023548941,0.00023660956,0.00030997596,0.00050220074,0.00036781706,0.0009720599],"category_scores_gemma":[0.00040463536,0.00013437055,0.00014573536,0.00015874532,0.00022396639,0.00038851495,0.00017907184,0.00044327,0.0002065406],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000052487387,0.000014229686,0.000115098934,0.000032857264,0.0000053912636,0.00006192239,0.000024032974,0.00026764342,0.9933209,0.00019217131,0.000056505374,0.0058566984],"study_design_scores_gemma":[0.00000830583,0.00015167109,0.00045985548,0.0000028357354,0.000008204368,0.00019440993,0.000006851124,0.0026651416,0.9958604,0.000072096576,0.00056755694,0.0000026909645],"about_ca_topic_score_codex":0.00044452123,"about_ca_topic_score_gemma":0.0007559882,"teacher_disagreement_score":0.0009720599,"about_ca_system_score_codex":0.00021241371,"about_ca_system_score_gemma":0.0001923696,"threshold_uncertainty_score":0.0032518506},"labels":[],"label_agreement":null},{"id":"W2109861348","doi":"10.1139/cjp-2013-0601","title":"Crystallization of amorphous silicon films by rapid thermal annealing for heterojunction photovoltaic solar cells","year":2014,"lang":"en","type":"article","venue":"Canadian Journal of Physics","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":true,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Optoelectronics; Raman spectroscopy; Crystallization; Amorphous silicon; Crystalline silicon; Photovoltaic system; Silicon; Solar cell; Heterojunction; Polymer solar cell; Quantum efficiency; Thermal; Quantum dot solar cell; Annealing (glass); Amorphous solid; Ellipsometry; Monocrystalline silicon; Thin film; Materials science; Ultraviolet; Optics; Physics; Nanotechnology; Composite material; Crystallography; Chemistry","score_opus":0.00754377577211012,"score_gpt":0.16894050192454751,"score_spread":0.1613967261524374,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2109861348","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9597449,0.0047970903,0.025786975,0.00021680571,0.00009819133,0.00024789595,0.0005555858,0.00031465094,0.008237867],"genre_scores_gemma":[0.9706771,0.0022286235,0.023170866,0.0000340248,0.000024553747,0.00007767571,0.00031006106,0.000110682275,0.0033662957],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998022,0.000019088106,0.000016683845,0.000035388348,0.000103688675,0.000023004175],"domain_scores_gemma":[0.9998821,0.000032510394,0.000021188876,0.000023423685,0.000033079537,0.0000075501493],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00020758163,0.00025108023,0.00039305777,0.00028229583,0.00042088502,0.00038490366,0.00025238688,0.00018836411,0.0011256004],"category_scores_gemma":[0.00029086077,0.0003381933,0.00027530116,0.0003061923,0.00016176577,0.000319537,0.0001804845,0.0005617009,0.000353551],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000011865948,0.000009369851,0.000060351238,0.000030063724,0.000003357353,0.0000141898745,0.000013319111,0.00020705191,0.99836975,0.00009186699,0.000045289835,0.0011435333],"study_design_scores_gemma":[0.0000066207563,0.00006175229,0.00086086674,0.000006332891,0.000007801663,0.000045006927,0.000014419622,0.002177732,0.99530435,0.000034782537,0.0014765911,0.0000036769002],"about_ca_topic_score_codex":0.0017157805,"about_ca_topic_score_gemma":0.0075397086,"teacher_disagreement_score":0.0017157805,"about_ca_system_score_codex":0.00038207765,"about_ca_system_score_gemma":0.0004582738,"threshold_uncertainty_score":0.0037655234},"labels":[],"label_agreement":null},{"id":"W2110253163","doi":"10.1155/2010/698718","title":"Surface Plasmon-Induced Band Gap in the Photocurrent Response of Organic Solar Cells","year":2010,"lang":"en","type":"article","venue":"International Journal of Photoenergy","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":10,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Royal Military College of Canada","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Photocurrent; Materials science; Work function; Organic solar cell; Grating; Electrode; Optoelectronics; Polymer solar cell; Layer (electronics); Heterojunction; Active layer; Wavelength; Band gap; Plasmon; Surface plasmon; Polymer; Solar cell; Nanotechnology; Chemistry; Composite material","score_opus":0.0124923491204136,"score_gpt":0.23521863065043605,"score_spread":0.22272628153002244,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2110253163","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9987301,0.00015422807,0.00042791595,0.000023212164,0.000007711741,0.0000029466662,0.000044282544,0.00002610613,0.000583551],"genre_scores_gemma":[0.9992318,0.00007427401,0.00024222478,0.000011442428,0.0000030576718,0.0000021673582,0.00003466047,0.0000044796207,0.0003960036],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99993455,0.000006652184,0.0000028762852,0.000013480177,0.00002487695,0.00001754102],"domain_scores_gemma":[0.9999095,0.00004286953,0.000009255303,0.000006832963,0.000018098966,0.000013310438],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00009000627,0.00013910596,0.00013510429,0.00013678073,0.000078711004,0.00021836757,0.00013594402,0.00021594758,0.0008911339],"category_scores_gemma":[0.00022513453,0.00011043181,0.00009870124,0.00012585825,0.00016060616,0.00012789875,0.00009197407,0.00023239195,0.00015488634],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000052046005,0.000017324917,0.00026140007,0.000014375441,0.0000031037348,0.000031745465,0.00001552572,0.00022985817,0.99843997,0.00005556126,0.000032719614,0.00084640534],"study_design_scores_gemma":[0.000010888525,0.00009742068,0.007218429,0.0000032906612,0.0000072517996,0.00006019156,0.000028317878,0.0042507113,0.9880426,0.000057220983,0.00022000347,0.0000036745078],"about_ca_topic_score_codex":0.00044535255,"about_ca_topic_score_gemma":0.00060451,"teacher_disagreement_score":0.0008911339,"about_ca_system_score_codex":0.0002302989,"about_ca_system_score_gemma":0.00009920635,"threshold_uncertainty_score":0.0029810667},"labels":[],"label_agreement":null},{"id":"W2110781536","doi":"10.1109/ccece.1998.685620","title":"A pixel fabrication process for low-energy X-ray imaging applications","year":2002,"lang":"en","type":"article","venue":"","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Schottky diode; Fabrication; Pixel; Thin-film transistor; Optoelectronics; Detector; Transistor; Materials science; Diode; X-ray detector; Leakage (economics); Process (computing); Electrical engineering; Computer science; Electronic engineering; Voltage; Engineering; Nanotechnology; Artificial intelligence","score_opus":0.01126526396590616,"score_gpt":0.21004684217805697,"score_spread":0.1987815782121508,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2110781536","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.4257486,0.006879389,0.5348821,0.0017082453,0.0011716298,0.00052234874,0.00092686637,0.0019962783,0.02616452],"genre_scores_gemma":[0.45555353,0.0024568813,0.53343403,0.00035606907,0.000121500205,0.0001792312,0.0003855201,0.00015284866,0.007360262],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99989486,0.000007713802,0.000006195714,0.000025670995,0.0000568423,0.000008646136],"domain_scores_gemma":[0.99984705,0.000051697385,0.000032353808,0.00002550851,0.00003450939,0.000008861511],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00020334727,0.0002144573,0.00017933807,0.00016717067,0.0004500572,0.00044140438,0.00037636675,0.00052417576,0.0021965578],"category_scores_gemma":[0.00035414353,0.00019874243,0.00024737554,0.00016946957,0.00019438582,0.0004315414,0.00017654251,0.0006317388,0.0009348258],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000019414549,0.000013061924,0.00027478262,0.00012823565,0.0000075629937,0.00010645049,0.000028402677,0.0002649253,0.9883963,0.001104174,0.00039001094,0.009266717],"study_design_scores_gemma":[0.000014078778,0.00018781319,0.0027303633,0.000015159896,0.000034590303,0.001522043,0.000030353918,0.0035684148,0.974893,0.0004825489,0.016510453,0.000011124003],"about_ca_topic_score_codex":0.00025218265,"about_ca_topic_score_gemma":0.00055546826,"teacher_disagreement_score":0.0021965578,"about_ca_system_score_codex":0.00021029453,"about_ca_system_score_gemma":0.00038714806,"threshold_uncertainty_score":0.00734818},"labels":[],"label_agreement":null},{"id":"W2111623726","doi":"10.3968/j.est.1923847920110201.715","title":"Analysis of Performance Parameters of Amorphous Photovoltaic Modules under Different Environmental Conditions","year":2011,"lang":"en","type":"article","venue":"Energy science and technology","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":10,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":false,"route_ca_venue":true,"route_about_ca":false,"ca_institutions":"","funders":"","keywords":"Equivalent series resistance; Saturation current; Amorphous silicon; Materials science; Diode; Irradiance; Amorphous solid; Photovoltaic system; Radiation; Irradiation; Shunt (medical); Optoelectronics; Radiant intensity; Atmospheric temperature range; Voltage; Saturation (graph theory); Analytical Chemistry (journal); Computational physics; Silicon; Optics; Electrical engineering; Mathematics; Thermodynamics; Physics; Crystalline silicon; Engineering; Chemistry","score_opus":0.009805041232669365,"score_gpt":0.17118346264487116,"score_spread":0.1613784214122018,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2111623726","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9935237,0.000281806,0.0050415844,0.000018571405,0.000004186853,0.00000898829,0.00032562748,0.0001108936,0.0006847243],"genre_scores_gemma":[0.9984034,0.00011679464,0.00090926804,0.000005137082,0.00000303224,0.000009788135,0.0002335386,0.000036457554,0.00028261624],"study_design_codex":"bench_or_experimental","study_design_gemma":"observational","domain_scores_codex":[0.9997429,0.000041282987,0.000014334993,0.00007389589,0.000093955656,0.000033681725],"domain_scores_gemma":[0.9994673,0.00020796225,0.00011070891,0.000056386587,0.00014098066,0.000016661248],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0002648442,0.00035494356,0.0003850666,0.00031467967,0.00016512936,0.00027224622,0.00022776081,0.00032412144,0.0008565117],"category_scores_gemma":[0.0006859266,0.00012393584,0.00028467126,0.00041331354,0.00016319838,0.00033862816,0.00012915334,0.00020658552,0.00025487272],"study_design_candidate":"observational","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00017374154,0.00003868521,0.006339572,0.00010227823,0.000051848252,0.00013084667,0.00008632014,0.0077109407,0.97687244,0.000076225435,0.00009859104,0.008318553],"study_design_scores_gemma":[0.000006912815,0.00046446247,0.027353844,0.0000082445085,0.00005255646,0.00021484905,0.0000586976,0.013058786,0.9581277,0.00007568765,0.00056111405,0.000017215343],"about_ca_topic_score_codex":0.00034484628,"about_ca_topic_score_gemma":0.00037466147,"teacher_disagreement_score":0.0008565117,"about_ca_system_score_codex":0.00022845702,"about_ca_system_score_gemma":0.000092862574,"threshold_uncertainty_score":0.0028653145},"labels":[],"label_agreement":null},{"id":"W2112641966","doi":"10.1063/1.4934869","title":"Selective wet-etch processing of optically transparent flexible InGaZnO thin-film transistors","year":2015,"lang":"en","type":"article","venue":"Applied Physics Letters","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":18,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Materials science; Thin-film transistor; Threshold voltage; Optoelectronics; Polyethylene naphthalate; Etching (microfabrication); Transistor; Flexible display; Subthreshold conduction; Voltage; Nanotechnology; Electrical engineering; Layer (electronics)","score_opus":0.024644779253038644,"score_gpt":0.2221187039306538,"score_spread":0.19747392467761515,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2112641966","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99481994,0.00035341375,0.0037299625,0.000018084145,0.000013744186,0.000012826503,0.00015384004,0.000050075752,0.0008481376],"genre_scores_gemma":[0.9945279,0.00028567418,0.00440401,0.000013901745,0.0000052216524,0.000011725303,0.00010621774,0.0000127028125,0.0006326563],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99995685,0.000001987159,0.0000024314281,0.000010740893,0.000013226563,0.00001481237],"domain_scores_gemma":[0.99996173,0.000009389627,0.000011717472,0.0000042714673,0.0000069283506,0.0000060619996],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000051792937,0.00022263658,0.00015125956,0.00010917119,0.0001287984,0.00016347188,0.00017172408,0.00010896682,0.00038540133],"category_scores_gemma":[0.00009931577,0.00012914534,0.0001523953,0.000100317855,0.00010569976,0.00015583042,0.00013359888,0.00016285267,0.00010017475],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000010822602,0.0000018497359,0.00007070097,0.000010388559,0.0000010914806,0.000020327245,0.0000064709197,0.000040467054,0.9992168,0.000015840267,0.000008262821,0.00059705536],"study_design_scores_gemma":[0.0000044191734,0.00004988283,0.0036761202,0.0000019986935,0.000006197374,0.000075832344,0.00001490591,0.0007561303,0.9949124,0.00001740309,0.00048175958,0.0000030084284],"about_ca_topic_score_codex":0.0011273168,"about_ca_topic_score_gemma":0.0027704306,"teacher_disagreement_score":0.0011273168,"about_ca_system_score_codex":0.00013429625,"about_ca_system_score_gemma":0.00010779989,"threshold_uncertainty_score":0.0022414923},"labels":[],"label_agreement":null},{"id":"W2114373010","doi":"10.1116/1.1647585","title":"Facet coatings for nonhermetically packaged lasers","year":2004,"lang":"en","type":"article","venue":"Journal of Vacuum Science & Technology A Vacuum Surfaces and Films","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Nortel (Canada)","funders":"","keywords":"Materials science; Laser; Optoelectronics; Plasma-enhanced chemical vapor deposition; Coating; Layer (electronics); Facet (psychology); Optics; Chemical vapor deposition; Composite material","score_opus":0.007995371205514766,"score_gpt":0.2246943497247877,"score_spread":0.21669897851927292,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2114373010","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9393145,0.0053980993,0.049009725,0.00015729353,0.0002215032,0.00011126722,0.00040333788,0.00042993767,0.0049543018],"genre_scores_gemma":[0.9629753,0.0013998845,0.03143058,0.000072574956,0.00003940939,0.000038786566,0.00026187612,0.000107931235,0.0036736783],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99973243,0.000018841898,0.000017557522,0.000045283236,0.00015108252,0.000034824585],"domain_scores_gemma":[0.9996834,0.000044077246,0.00010200401,0.00007095186,0.00008230827,0.000017310005],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00017215527,0.00028941216,0.00020549401,0.00017349186,0.00016054383,0.00036992008,0.00041239418,0.0002891504,0.0012873858],"category_scores_gemma":[0.00046181228,0.0002344318,0.00025583318,0.00016017914,0.00018849527,0.0003901978,0.0002485067,0.00035595387,0.0004227452],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000011798645,0.000005508738,0.00016484046,0.000053400745,0.0000042313964,0.000027077902,0.000013552043,0.00008426415,0.9975804,0.00006674966,0.000052143772,0.0019359024],"study_design_scores_gemma":[0.000004953173,0.000103199774,0.0026850884,0.0000038842363,0.000011193862,0.00013610734,0.000012006215,0.00071673346,0.9944694,0.000023182987,0.001828392,0.0000058230708],"about_ca_topic_score_codex":0.0009140627,"about_ca_topic_score_gemma":0.0020929866,"teacher_disagreement_score":0.0012873858,"about_ca_system_score_codex":0.00041892365,"about_ca_system_score_gemma":0.00021790876,"threshold_uncertainty_score":0.004306674},"labels":[],"label_agreement":null},{"id":"W2114548500","doi":"10.1109/ccece.2005.1557439","title":"Low frequency noise in amorphous silicon thin-film transistors","year":2006,"lang":"en","type":"article","venue":"","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Saskatchewan","funders":"University of Waterloo","keywords":"Thin-film transistor; Noise (video); Amorphous silicon; Transistor; Materials science; Silicon; Optoelectronics; Amorphous solid; Noise power; Detector; Saturation (graph theory); Flicker noise; Johnson–Nyquist noise; Physics; Electrical engineering; Power (physics); Voltage; Computer science; Nanotechnology; Noise figure; Optics; Crystallography; CMOS; Chemistry; Engineering; Crystalline silicon; Artificial intelligence; Quantum mechanics; Mathematics","score_opus":0.005258649260123111,"score_gpt":0.1756897631005979,"score_spread":0.17043111384047477,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2114548500","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.95110476,0.0015903848,0.042288925,0.00026934614,0.000045539284,0.000020644819,0.0001442223,0.00051936845,0.004016805],"genre_scores_gemma":[0.9943551,0.00030036224,0.0041572223,0.000041765543,0.000018385332,0.0000089639625,0.00008930731,0.000025184327,0.0010037525],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99964345,0.000055861772,0.000014512405,0.00007853686,0.00017764539,0.000029941144],"domain_scores_gemma":[0.9990602,0.00066598284,0.000074762866,0.000040290754,0.00013632045,0.000022380358],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00028358714,0.0002612623,0.0002471836,0.0004621225,0.00022419843,0.0004914107,0.00032281142,0.00055466965,0.0006189555],"category_scores_gemma":[0.0018282005,0.00017732465,0.00016489837,0.0004397295,0.00048664465,0.00044323454,0.00011815218,0.00026141902,0.00025061506],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00024337461,0.00009833261,0.0072137066,0.00018352983,0.000036777234,0.0007763161,0.00041819367,0.023875201,0.94052905,0.005385172,0.0005799691,0.020660281],"study_design_scores_gemma":[0.00007438074,0.0006216993,0.015607787,0.00008527679,0.00006830333,0.0011311263,0.00015210861,0.2562966,0.7165396,0.005571035,0.0037928135,0.000059157344],"about_ca_topic_score_codex":0.0012944908,"about_ca_topic_score_gemma":0.0014937011,"teacher_disagreement_score":0.0012944908,"about_ca_system_score_codex":0.00075925083,"about_ca_system_score_gemma":0.00016682863,"threshold_uncertainty_score":0.005508721},"labels":[],"label_agreement":null},{"id":"W2114574737","doi":"10.1016/j.sse.2005.02.004","title":"Accurate modeling and parameter extraction method for organic TFTs","year":2005,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":153,"is_retracted":false,"has_abstract":false,"route_ca_aff":false,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"","funders":"Consejo Nacional de Ciencia y Tecnología; Generalitat de Catalunya; McMaster University","keywords":"Extraction (chemistry); Thin-film transistor; Materials science; Transistor; Transconductance; Organic semiconductor; Biological system; Computer science; Optoelectronics; Nanotechnology; Electrical engineering; Chromatography; Chemistry","score_opus":0.014231714339791396,"score_gpt":0.2838989474016144,"score_spread":0.26966723306182305,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2114574737","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.013122438,0.00037811545,0.98212403,0.00009581313,0.000038388258,0.000031573556,0.00023292706,0.0014298283,0.002546997],"genre_scores_gemma":[0.6609908,0.0012652096,0.32381558,0.000091678914,0.000066540786,0.00029348728,0.0008416185,0.00061847136,0.012016692],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9998323,0.000019649971,0.0000075319817,0.000021602069,0.00010465816,0.000014285476],"domain_scores_gemma":[0.9998079,0.000060983337,0.000017487157,0.000043433287,0.00006567989,0.0000045720453],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0002019992,0.0006236783,0.00048334524,0.00039382066,0.00033370225,0.00049096806,0.00095473893,0.0006918214,0.0020823027],"category_scores_gemma":[0.00089098874,0.00037779237,0.00044862853,0.00044934885,0.00016323388,0.0010854376,0.0002227143,0.0006009237,0.001151122],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00007938746,0.000039808765,0.00055735715,0.00022726272,0.00007550875,0.00019472935,0.00014631878,0.7446001,0.11541648,0.012866381,0.003237555,0.122559085],"study_design_scores_gemma":[0.0000060945545,0.000021386912,0.00017723789,0.000009515634,0.000015710399,0.00006291684,0.000012008302,0.9669086,0.02529071,0.0021849298,0.005299252,0.0000116614],"about_ca_topic_score_codex":0.004124027,"about_ca_topic_score_gemma":0.004439041,"teacher_disagreement_score":0.004124027,"about_ca_system_score_codex":0.00064112915,"about_ca_system_score_gemma":0.0006719621,"threshold_uncertainty_score":0.008200049},"labels":[],"label_agreement":null},{"id":"W2115049863","doi":"10.1557/proc-736-d7.15","title":"Vt-Shift Compensating Amorphous Silicon Pixel Circuits for Flexible OLED Displays","year":2002,"lang":"en","type":"article","venue":"MRS Proceedings","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":5,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Materials science; Pixel; Electronic circuit; Active matrix; OLED; Thin-film transistor; Optoelectronics; Brightness; Threshold voltage; Biasing; Voltage; Electrical engineering; Electronic engineering; Computer science; Transistor; Optics; Nanotechnology; Artificial intelligence; Engineering; Physics","score_opus":0.024001991856368303,"score_gpt":0.20597377952528095,"score_spread":0.18197178766891264,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2115049863","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.8166352,0.0046600117,0.146947,0.0010776535,0.0006938108,0.00014483217,0.00063692615,0.0037083384,0.025496209],"genre_scores_gemma":[0.97238976,0.00054383645,0.017548775,0.00020065944,0.00012477135,0.00002145501,0.0001309814,0.00009743993,0.008942316],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99992526,0.000006424135,0.000004743229,0.00001781999,0.000030382196,0.000015337828],"domain_scores_gemma":[0.9998697,0.000032465345,0.000028349958,0.000020788244,0.00003705287,0.000011640371],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00009185171,0.00021983554,0.00017676115,0.00024510946,0.00033738933,0.00049277453,0.0008533298,0.00031264534,0.0033009348],"category_scores_gemma":[0.00025758,0.00012833365,0.00012990888,0.00026971742,0.0001502877,0.00041749224,0.0002164493,0.00031075327,0.00041927426],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00015636558,0.000039190425,0.00048129924,0.00007424132,0.000025219213,0.0001508988,0.000059469683,0.00084383204,0.9568453,0.0033866116,0.0019937486,0.03594384],"study_design_scores_gemma":[0.000043104028,0.00041141594,0.0023570133,0.000029118735,0.000063588785,0.0009595498,0.0000546381,0.030265644,0.95023394,0.0017466226,0.013811442,0.000023984556],"about_ca_topic_score_codex":0.0005398379,"about_ca_topic_score_gemma":0.0027440262,"teacher_disagreement_score":0.0033009348,"about_ca_system_score_codex":0.00033370196,"about_ca_system_score_gemma":0.00019226818,"threshold_uncertainty_score":0.011042714},"labels":[],"label_agreement":null},{"id":"W2115276348","doi":"10.1557/proc-0910-a22-05","title":"Ambipolar Thin-Film Transistors Fabricated by PECVD Nanocrystalline Silicon","year":2006,"lang":"en","type":"article","venue":"MRS Proceedings","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":6,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Materials science; Ambipolar diffusion; Thin-film transistor; Optoelectronics; Plasma-enhanced chemical vapor deposition; Subthreshold slope; Transistor; Electron mobility; Threshold voltage; Silicon; Nanotechnology; Electrical engineering; Electron; Layer (electronics); Voltage","score_opus":0.004124079381007796,"score_gpt":0.16720605908266614,"score_spread":0.16308197970165836,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2115276348","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.98250014,0.00079303316,0.004996468,0.0002545457,0.00017505136,0.00004636701,0.00042965592,0.00022803778,0.010576741],"genre_scores_gemma":[0.9817916,0.000913285,0.010392723,0.00009105294,0.000035451165,0.000059779275,0.00032536767,0.00008154704,0.0063091917],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99988914,0.0000036463803,0.0000072708126,0.000025449855,0.00005485579,0.000019649176],"domain_scores_gemma":[0.99981743,0.000049044032,0.000029593462,0.00003417073,0.000043489163,0.000026276877],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00010268914,0.0002822778,0.00053086615,0.0002670575,0.00031630447,0.0006761943,0.0005522812,0.0003868616,0.0019945796],"category_scores_gemma":[0.00030577744,0.00037710907,0.00015163272,0.0002729508,0.00025013668,0.00047204157,0.00025893966,0.00056315714,0.0007149098],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000034659774,0.000007921419,0.00008145882,0.000034462573,0.0000066974544,0.00009225099,0.00003881281,0.00006416977,0.9981945,0.00035304233,0.00015769413,0.00093437237],"study_design_scores_gemma":[0.000015465082,0.000050343104,0.00083890615,0.0000072377215,0.000010045831,0.00014592233,0.000035315865,0.0013844494,0.9962606,0.00011996983,0.0011265277,0.000005180569],"about_ca_topic_score_codex":0.0014188511,"about_ca_topic_score_gemma":0.0052730613,"teacher_disagreement_score":0.0019945796,"about_ca_system_score_codex":0.00055192783,"about_ca_system_score_gemma":0.00030065075,"threshold_uncertainty_score":0.006672561},"labels":[],"label_agreement":null},{"id":"W2115756331","doi":"10.1139/cjp-2013-0558","title":"Control of growth process for obtaining high-quality a-SiO:H","year":2014,"lang":"en","type":"article","venue":"Canadian Journal of Physics","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":2,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":false,"route_ca_venue":true,"route_about_ca":false,"ca_institutions":"","funders":"","keywords":"Dangling bond; Plasma; Dissociation (chemistry); Oxygen; Molecule; Analytical Chemistry (journal); Growth rate; Amorphous silicon; Silicon; Physics; Physical chemistry; Chemistry; Optoelectronics; Organic chemistry","score_opus":0.015390584096154958,"score_gpt":0.2235646034373439,"score_spread":0.20817401934118895,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2115756331","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.98034793,0.0006200883,0.015939089,0.000088201225,0.000044148142,0.00008197583,0.00019185327,0.000214038,0.0024725632],"genre_scores_gemma":[0.99042726,0.00036902327,0.008359897,0.000016019889,0.000008272537,0.000039111208,0.00007550042,0.000024373936,0.0006804896],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99995124,0.0000026939133,0.0000025292934,0.000013888579,0.000020652422,0.000009088639],"domain_scores_gemma":[0.9999491,0.0000103871735,0.000017905935,0.0000047289655,0.000011529374,0.0000063867187],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00008292458,0.00025872202,0.00014205615,0.000088678345,0.00014204679,0.00021757533,0.00021020054,0.00019034761,0.00048236808],"category_scores_gemma":[0.000107412234,0.0001192442,0.0001143724,0.00010022482,0.00012578278,0.0001576774,0.000119760174,0.00019992709,0.00013739945],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000019617379,0.000007678848,0.000114031114,0.000042162475,0.0000021251403,0.000022235465,0.00001030397,0.00026232222,0.9986872,0.000095271025,0.000037175694,0.0006998148],"study_design_scores_gemma":[0.000017397264,0.00008574551,0.00097424473,0.0000018294626,0.0000052945484,0.00002921523,0.000012197121,0.00616479,0.9916678,0.00004234978,0.0009955959,0.0000035450482],"about_ca_topic_score_codex":0.00063423277,"about_ca_topic_score_gemma":0.0011014097,"teacher_disagreement_score":0.00063423277,"about_ca_system_score_codex":0.00020276876,"about_ca_system_score_gemma":0.00022976683,"threshold_uncertainty_score":0.0016137362},"labels":[],"label_agreement":null},{"id":"W2116112727","doi":"10.1557/proc-808-a4.11","title":"Accelerated Stress Testing of a-Si:H TFTs for Amoled Displays","year":2004,"lang":"en","type":"article","venue":"MRS Proceedings","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Backplane; AMOLED; Materials science; Thin-film transistor; OLED; Optoelectronics; Stress (linguistics); Computer science; Active matrix; Computer hardware; Nanotechnology","score_opus":0.026848488405824877,"score_gpt":0.2249530015519792,"score_spread":0.19810451314615432,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2116112727","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99781823,0.00019557915,0.0011202999,0.000054860397,0.000024924595,0.000015618372,0.00012913144,0.00007199821,0.00056932063],"genre_scores_gemma":[0.9984074,0.000061972714,0.0006087011,0.00001768064,0.00001013555,0.000008613833,0.000054983117,0.000015119449,0.0008154095],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99976736,0.000035604717,0.000012136894,0.000043765824,0.000069229995,0.00007187242],"domain_scores_gemma":[0.9993795,0.00017032844,0.000075172175,0.000075040174,0.00024262312,0.000057213343],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00024727412,0.00033218533,0.0002662361,0.00026239164,0.00040096295,0.00031277322,0.0004991921,0.00062565843,0.0023462845],"category_scores_gemma":[0.0006454671,0.00014882203,0.00024562367,0.0002549561,0.00027816222,0.0005668225,0.00025267433,0.00031761688,0.00036983597],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0005145757,0.00006262794,0.0028253433,0.00005850418,0.000024322973,0.00022178392,0.00026749188,0.00096667383,0.9875865,0.00012934148,0.00044941538,0.006893333],"study_design_scores_gemma":[0.000070485374,0.0043016477,0.025167061,0.000018960029,0.000040981988,0.00036073316,0.00033930546,0.009176633,0.9571606,0.000246981,0.0030815124,0.000035088906],"about_ca_topic_score_codex":0.0016701022,"about_ca_topic_score_gemma":0.002941071,"teacher_disagreement_score":0.0023462845,"about_ca_system_score_codex":0.0005810252,"about_ca_system_score_gemma":0.00023046891,"threshold_uncertainty_score":0.007849097},"labels":[],"label_agreement":null},{"id":"W2117838357","doi":"10.1557/proc-0910-a06-03","title":"Photocarrier Radiometric Lifetime Measurements of Intrinsic Amorphous-Crystalline Silicon Heterostructure","year":2006,"lang":"en","type":"article","venue":"MRS Proceedings","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Canadian Institute for Advanced Research; Canada Research Chairs; University of Toronto","funders":"","keywords":"Materials science; Crystalline silicon; Silicon; Amorphous solid; Heterojunction; Passivation; Amorphous silicon; Wafer; Nanocrystalline silicon; Substrate (aquarium); Optoelectronics; Nanotechnology; Crystallography; Layer (electronics); Chemistry","score_opus":0.009609589050921827,"score_gpt":0.18841321924988488,"score_spread":0.17880363019896306,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2117838357","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9952383,0.0002940004,0.0030212118,0.000026654876,0.000008764107,0.000008641127,0.00012979831,0.00009201691,0.0011805599],"genre_scores_gemma":[0.996207,0.00017746947,0.0018803597,0.00002334066,0.00000587718,0.000011835658,0.00013097089,0.00002195839,0.001541181],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998405,0.000014789052,0.000007924802,0.000047305202,0.000048091042,0.00004147368],"domain_scores_gemma":[0.99950933,0.00020121112,0.000075610566,0.000061978244,0.0001127155,0.000039043254],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00027356017,0.00018436484,0.00019623485,0.00029660342,0.000250001,0.0004644908,0.0004801329,0.0003204971,0.0014035011],"category_scores_gemma":[0.00064067927,0.00014063787,0.00014980498,0.00029320645,0.00027024435,0.00041758237,0.00020339478,0.00056450523,0.0003517911],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00007211818,0.000013700361,0.00039470647,0.000013261457,0.000005036929,0.00003916707,0.00006467554,0.000069271024,0.99805486,0.00013371925,0.000038556856,0.0011010519],"study_design_scores_gemma":[0.0000051306356,0.0001000176,0.0022528977,0.0000023575535,0.000008381034,0.00007969195,0.000047519843,0.0012752474,0.99594915,0.000028675833,0.00024751172,0.000003324151],"about_ca_topic_score_codex":0.001445945,"about_ca_topic_score_gemma":0.0023954713,"teacher_disagreement_score":0.001445945,"about_ca_system_score_codex":0.00059767335,"about_ca_system_score_gemma":0.00024536432,"threshold_uncertainty_score":0.0046952367},"labels":[],"label_agreement":null},{"id":"W2119075659","doi":"10.1557/proc-715-a12.6","title":"Amorphous Silicon Vertical Thin Film Transistor for High Density Integration","year":2002,"lang":"en","type":"article","venue":"MRS Proceedings","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":2,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Materials science; Photoresist; Reactive-ion etching; Fabrication; Dry etching; Optoelectronics; Masking (illustration); Amorphous silicon; Amorphous solid; Silicon; Etching (microfabrication); Thin-film transistor; Transistor; Nanotechnology; Crystalline silicon; Electrical engineering; Layer (electronics); Crystallography","score_opus":0.014104779207465053,"score_gpt":0.1884334047351051,"score_spread":0.17432862552764003,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2119075659","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.7504539,0.01740734,0.10883898,0.0030188018,0.0027503571,0.00028280425,0.0017042938,0.0033670056,0.11217654],"genre_scores_gemma":[0.89497876,0.0038063119,0.052424308,0.00031999382,0.00037321335,0.00008304034,0.00078603654,0.00013961547,0.047088683],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999403,0.0000035213534,0.0000025864224,0.000010091363,0.00003256976,0.000010939393],"domain_scores_gemma":[0.9999255,0.000014860791,0.000008449153,0.000011861792,0.000029499837,0.000009815089],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00008242222,0.00022330371,0.00026642936,0.0003105051,0.0003923839,0.0007433638,0.0005642962,0.00040751364,0.004791309],"category_scores_gemma":[0.00017444634,0.00020642071,0.0001705609,0.0003854524,0.00017077278,0.00048507398,0.0002906127,0.0004227877,0.0009570586],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00006974507,0.000039754857,0.00037850207,0.00015626334,0.0000366006,0.00026180918,0.000059674778,0.00054422126,0.96496457,0.010958794,0.005739139,0.016791066],"study_design_scores_gemma":[0.00007884951,0.000717301,0.0032277743,0.00007672063,0.00013762739,0.001209711,0.0001777569,0.024508957,0.88206786,0.005415939,0.08234806,0.000033383545],"about_ca_topic_score_codex":0.000756696,"about_ca_topic_score_gemma":0.0034078765,"teacher_disagreement_score":0.004791309,"about_ca_system_score_codex":0.0003491231,"about_ca_system_score_gemma":0.00033152287,"threshold_uncertainty_score":0.016028583},"labels":[],"label_agreement":null},{"id":"W2119103826","doi":"10.1109/led.2005.855421","title":"A novel a-Si:H AMOLED pixel circuit based on short-term stress stability of a-Si:H TFTs","year":2005,"lang":"en","type":"article","venue":"IEEE Electron Device Letters","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":11,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"AMOLED; Thin-film transistor; Materials science; OLED; Threshold voltage; Active matrix; Optoelectronics; Transistor; Diode; Logic gate; Pixel; Stress (linguistics); Amorphous silicon; Voltage; Electrical engineering; Silicon; Electronic engineering; Computer science; Engineering; Crystalline silicon; Nanotechnology; Artificial intelligence","score_opus":0.01767157533467293,"score_gpt":0.2192024062976545,"score_spread":0.20153083096298158,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2119103826","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.8748205,0.0013648253,0.114452325,0.000326368,0.00024210558,0.00011762186,0.0003714421,0.0028342826,0.005470582],"genre_scores_gemma":[0.95314413,0.00022277444,0.043994654,0.00016521644,0.00009026217,0.00004256305,0.00009173169,0.00004484023,0.0022038168],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999093,0.000005918773,0.000006157709,0.00003459243,0.000030105344,0.000013874719],"domain_scores_gemma":[0.99984527,0.000050797218,0.00002139268,0.000023505727,0.000040373285,0.000018707473],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00006847789,0.00012595477,0.00023768784,0.00014447958,0.00029170414,0.00035811678,0.0008457341,0.00039340774,0.0014221923],"category_scores_gemma":[0.00015518836,0.00012456188,0.00014150752,0.00016831988,0.0002129237,0.00043594462,0.00019393652,0.00021172015,0.0002364715],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00013721862,0.000036934638,0.00058950053,0.00007971926,0.000019645457,0.00019423812,0.000040507784,0.00040437843,0.9713515,0.00074570935,0.00061097444,0.025789656],"study_design_scores_gemma":[0.000047230056,0.00048784565,0.0020406547,0.0000067443375,0.000052619383,0.00083056756,0.000018401393,0.015095094,0.9741555,0.00034862926,0.006901346,0.000015414049],"about_ca_topic_score_codex":0.00026980307,"about_ca_topic_score_gemma":0.0005414769,"teacher_disagreement_score":0.0014221923,"about_ca_system_score_codex":0.00021741731,"about_ca_system_score_gemma":0.0001626072,"threshold_uncertainty_score":0.0047577024},"labels":[],"label_agreement":null},{"id":"W2119929355","doi":"10.1557/proc-609-a27.4","title":"Modeling of Beta Conductivity in Tritiated Amorphous Silicon","year":2000,"lang":"en","type":"article","venue":"MRS Proceedings","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":3,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Ontario Power Generation; University of Toronto","funders":"","keywords":"Dangling bond; Materials science; Conductivity; Amorphous silicon; Tritium; Amorphous solid; Particle (ecology); BETA (programming language); Beta particle; Radiochemistry; Silicon; Physical chemistry; Nuclear physics; Crystallography; Crystalline silicon; Chemistry; Optoelectronics; Physics","score_opus":0.015364278123052596,"score_gpt":0.20109513826641937,"score_spread":0.18573086014336676,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2119929355","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.7603494,0.0023496458,0.15148728,0.0012457805,0.00020466854,0.000117961674,0.00061722967,0.0007990761,0.08282894],"genre_scores_gemma":[0.9830564,0.00061099423,0.0052109417,0.000104685416,0.00002303738,0.000051135532,0.00015004449,0.00010858448,0.010684126],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99987185,0.000027419772,0.000003979542,0.000020052643,0.000041465726,0.000035230525],"domain_scores_gemma":[0.9996861,0.00016750772,0.00003223902,0.000026122572,0.00006629878,0.00002173458],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0003172912,0.00043109118,0.00049260474,0.0003732976,0.00037103597,0.0009030831,0.0011365294,0.0012677116,0.0021522965],"category_scores_gemma":[0.0009844848,0.00036702998,0.0005157081,0.0005235648,0.0005476494,0.0007985576,0.00023605027,0.0005121066,0.00043128396],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00010530905,0.000059823135,0.00089438073,0.00010068958,0.000032570744,0.0003661586,0.00012140029,0.9480172,0.020853218,0.02649245,0.0007097252,0.0022470076],"study_design_scores_gemma":[0.000009849251,0.000019027451,0.00019108836,0.000006990375,0.000007100958,0.000033117536,0.000016358399,0.99478674,0.0033989479,0.0011943149,0.00033039093,0.0000060438297],"about_ca_topic_score_codex":0.0090376185,"about_ca_topic_score_gemma":0.0059277387,"teacher_disagreement_score":0.0090376185,"about_ca_system_score_codex":0.0014994058,"about_ca_system_score_gemma":0.00089384714,"threshold_uncertainty_score":0.017970026},"labels":[],"label_agreement":null},{"id":"W2120161648","doi":"10.1109/ccece.2007.416","title":"Fabrication and Characterization of Nickel Amorphous Silicon Metal-Semiconductor-Metal Photoconductors","year":2007,"lang":"en","type":"article","venue":"","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":4,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Simon Fraser University","funders":"","keywords":"Responsivity; Silicon; Photodetector; Materials science; Amorphous silicon; Optoelectronics; Semiconductor detector; Semiconductor; Fabrication; Nickel; Detector; Physics; Crystalline silicon; Optics; Metallurgy","score_opus":0.012641251082812595,"score_gpt":0.21228268428564315,"score_spread":0.19964143320283056,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2120161648","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.93700683,0.0015441256,0.037031863,0.00026635668,0.000121338984,0.00036932636,0.0022353388,0.0012537979,0.020170989],"genre_scores_gemma":[0.9352378,0.0012438302,0.050718125,0.0000786256,0.000028171295,0.00016461148,0.0012323817,0.00010726725,0.011189113],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9997329,0.000015873407,0.000017364964,0.000060674392,0.00014842045,0.000024699215],"domain_scores_gemma":[0.99972016,0.00004926736,0.000055257766,0.000048783924,0.00010236365,0.00002410249],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00019731554,0.00027983214,0.00025184624,0.00026220334,0.00035267806,0.00044615965,0.00062962895,0.00024871173,0.0010917152],"category_scores_gemma":[0.0005820567,0.00016273874,0.00012768952,0.00037016865,0.00021040022,0.00026531122,0.00018092836,0.00023122343,0.0007251353],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000017027605,0.000013042065,0.0003122061,0.00006581379,0.0000042180777,0.00012604863,0.00006637104,0.00016626366,0.99509215,0.00036399884,0.0002437263,0.0035289624],"study_design_scores_gemma":[0.000003445515,0.000059200396,0.0019668487,0.0000050462486,0.0000056388785,0.00012870334,0.000041739087,0.0011642557,0.9908749,0.00005160119,0.005693084,0.000005551678],"about_ca_topic_score_codex":0.0017455311,"about_ca_topic_score_gemma":0.0033936857,"teacher_disagreement_score":0.0017455311,"about_ca_system_score_codex":0.0005339961,"about_ca_system_score_gemma":0.0004725958,"threshold_uncertainty_score":0.0038744211},"labels":[],"label_agreement":null},{"id":"W2120196082","doi":"10.1063/1.2946454","title":"Temperature dependent vibrational spectra and bond dynamics in hydrogenated amorphous silicon","year":2008,"lang":"en","type":"article","venue":"Journal of Applied Physics","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":10,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Ontario Tech University","funders":"","keywords":"Dangling bond; Amorphous silicon; Silicon; Materials science; Molecular dynamics; Chemical physics; Amorphous solid; Hydrogen; Ab initio; Ab initio quantum chemistry methods; Crystalline silicon; Computational chemistry; Chemistry; Crystallography; Optoelectronics; Molecule","score_opus":0.005318337326435418,"score_gpt":0.17357902794210817,"score_spread":0.16826069061567275,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2120196082","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9924797,0.000098720455,0.0065267724,0.000023341581,0.0000028909294,0.000004022598,0.00008475439,0.000044605604,0.00073514157],"genre_scores_gemma":[0.99822193,0.000074584175,0.0014461244,0.000003321477,0.0000013832962,0.0000060276243,0.00008973279,0.000009315934,0.00014747078],"study_design_codex":"simulation_or_modeling","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999654,0.0000058758883,0.0000016222727,0.000008102859,0.000012366595,0.0000065376717],"domain_scores_gemma":[0.99992466,0.000037905862,0.000010636018,0.000009866002,0.00000992503,0.0000070116857],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000113482885,0.00026500053,0.00020657979,0.00025142785,0.00021371733,0.00017071156,0.00027784414,0.00021464303,0.00074338616],"category_scores_gemma":[0.00022595472,0.00015928784,0.00022770587,0.00024225823,0.00034108703,0.0003326988,0.00013918051,0.00022720882,0.000073456446],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00015916926,0.00009831903,0.0066891094,0.00009858569,0.00006575878,0.00021971516,0.00021108914,0.72957015,0.25050896,0.0058299988,0.00017107175,0.006378138],"study_design_scores_gemma":[0.0000146583225,0.0000665439,0.0036913913,0.0000035437436,0.0000085622,0.000026083058,0.000025910356,0.9663707,0.028481323,0.0011110718,0.0001871574,0.000013052634],"about_ca_topic_score_codex":0.0016674481,"about_ca_topic_score_gemma":0.0010891597,"teacher_disagreement_score":0.0016674481,"about_ca_system_score_codex":0.0002359211,"about_ca_system_score_gemma":0.00014374878,"threshold_uncertainty_score":0.0033154488},"labels":[],"label_agreement":null},{"id":"W2120551123","doi":"10.1109/ted.2006.881012","title":"Equivalent Circuit Description of Threshold Voltage Shift in a-Si:H TFTs From a Probabilistic Analysis of Carrier Population Dynamics","year":2006,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":11,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Thin-film transistor; Threshold voltage; Probabilistic logic; Amorphous silicon; Population; Optoelectronics; Transistor; Biasing; Electronic circuit; Materials science; Logic gate; Electrical engineering; Electronic engineering; Computer science; Voltage; Engineering; Silicon; Nanotechnology; Artificial intelligence","score_opus":0.013263610191436433,"score_gpt":0.21538362012513626,"score_spread":0.20212000993369983,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2120551123","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.04043742,0.00043814542,0.94429904,0.0004157999,0.0000819768,0.00008313016,0.00071597274,0.00092591933,0.012602616],"genre_scores_gemma":[0.93714446,0.00055989414,0.047351718,0.0002002546,0.00007017133,0.000257777,0.00037084607,0.00012176233,0.013923052],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9998826,0.000020551688,0.000007169041,0.000026599413,0.000049924864,0.000013191797],"domain_scores_gemma":[0.9998079,0.00011417149,0.000019179288,0.000017079492,0.000036498117,0.000005206279],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00021969683,0.00046622497,0.00034409083,0.00029481066,0.0002897929,0.0005122938,0.0010053876,0.0011704866,0.0036115455],"category_scores_gemma":[0.0006614519,0.00020424364,0.0006888223,0.00024368246,0.0002934338,0.00080621074,0.00018039401,0.00049415085,0.0005294182],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00004375983,0.00003228882,0.00039540272,0.00008280069,0.000030665953,0.00023266961,0.00008383465,0.93324405,0.025814362,0.023988657,0.001139849,0.014911602],"study_design_scores_gemma":[0.000002580355,0.000009053834,0.000057014182,0.0000022947022,0.000004379643,0.000022508328,0.000002653289,0.99713707,0.0007839298,0.0015828387,0.00039360859,0.0000020768762],"about_ca_topic_score_codex":0.0033538963,"about_ca_topic_score_gemma":0.003351285,"teacher_disagreement_score":0.0036115455,"about_ca_system_score_codex":0.00092531694,"about_ca_system_score_gemma":0.0002926147,"threshold_uncertainty_score":0.012081802},"labels":[],"label_agreement":null},{"id":"W2121307301","doi":"10.1557/proc-609-a28.3","title":"A physically-based SPICE model for the leakage current in a-Si:H TFTs accounting for its dependencies on process, geometrical, and bias conditions","year":2000,"lang":"en","type":"article","venue":"MRS Proceedings","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":10,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Spice; Thin-film transistor; Materials science; Leakage (economics); Amorphous silicon; Transistor; Amorphous solid; Silicon; Optoelectronics; Voltage; Deposition (geology); Computational physics; Mechanics; Electronic engineering; Electrical engineering; Layer (electronics); Composite material; Crystalline silicon; Chemistry; Physics; Engineering; Crystallography","score_opus":0.044227222823813056,"score_gpt":0.27274604184530565,"score_spread":0.2285188190214926,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2121307301","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.04752168,0.0009531389,0.92918223,0.00074851414,0.00015422616,0.00016445087,0.00074720534,0.0014704067,0.019058118],"genre_scores_gemma":[0.92033935,0.0012983591,0.055495847,0.00044372893,0.00015811362,0.0003092545,0.0005164494,0.00061031326,0.020828564],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99979657,0.00003934873,0.000008598238,0.000036764533,0.00009029703,0.000028391605],"domain_scores_gemma":[0.9996549,0.00014682136,0.000029931836,0.000052478732,0.00010324854,0.000012713086],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00044466258,0.00075736,0.00070581306,0.0006008364,0.0005057638,0.0008498301,0.002215756,0.001813879,0.0032915885],"category_scores_gemma":[0.0015011679,0.0005141054,0.00091397815,0.00061590463,0.0007640091,0.0019184522,0.0003813357,0.0010003853,0.0011618724],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00005119833,0.000041640542,0.000330132,0.0001416815,0.000045205164,0.00024277472,0.00014990245,0.9453708,0.01927929,0.02651508,0.0013737585,0.006458566],"study_design_scores_gemma":[0.0000042966967,0.0000142400195,0.000059193986,0.0000054915613,0.000008079312,0.00004092653,0.0000071974114,0.9959078,0.0009260725,0.0025579645,0.0004640559,0.0000046291807],"about_ca_topic_score_codex":0.00425646,"about_ca_topic_score_gemma":0.005324207,"teacher_disagreement_score":0.00425646,"about_ca_system_score_codex":0.0010751428,"about_ca_system_score_gemma":0.0008110289,"threshold_uncertainty_score":0.011011422},"labels":[],"label_agreement":null},{"id":"W2121579607","doi":"10.1109/tcsii.2006.880028","title":"Stable Organic LED Displays Using RMS Estimation of Threshold Voltage Dispersion","year":2006,"lang":"en","type":"article","venue":"IEEE Transactions on Circuits and Systems II Analog and Digital Signal Processing","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":12,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Thin-film transistor; OLED; Brightness; Active matrix; Threshold voltage; Optoelectronics; Transistor; Materials science; Diode; Dispersion (optics); Amorphous silicon; Pixel; Electrical engineering; Biasing; Voltage; Silicon; Physics; Optics; Engineering; Nanotechnology; Crystalline silicon","score_opus":0.012449578728205467,"score_gpt":0.20021188832439943,"score_spread":0.18776230959619397,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2121579607","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.3295852,0.00093983894,0.6628837,0.00012699048,0.00007019136,0.00002989261,0.00020610211,0.003017497,0.0031406386],"genre_scores_gemma":[0.8595583,0.00034752797,0.13818343,0.000027268843,0.000042048898,0.000021064458,0.0001983288,0.00015169896,0.0014703687],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9996288,0.00006822325,0.000018755616,0.00009740038,0.00016748245,0.000019444142],"domain_scores_gemma":[0.99909234,0.000329838,0.00018674241,0.00010932019,0.00026495644,0.000016771382],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00034356405,0.00029519372,0.00020345645,0.00044199955,0.00017242122,0.00047324353,0.00030476725,0.0003985015,0.0004908508],"category_scores_gemma":[0.0018849766,0.00015013173,0.00013487852,0.00044946064,0.00013161922,0.00053069234,0.00019401862,0.00033101375,0.0002651342],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0004545158,0.0000577038,0.005517634,0.000099678415,0.00006595124,0.00011902296,0.00015917617,0.02824723,0.69471455,0.0016768025,0.0006899902,0.26819783],"study_design_scores_gemma":[0.000016973694,0.00015399781,0.008408712,0.00002072177,0.00004955062,0.00024195784,0.000032960583,0.4037674,0.5848472,0.0006039294,0.0017995491,0.00005711362],"about_ca_topic_score_codex":0.0008878134,"about_ca_topic_score_gemma":0.0014729826,"teacher_disagreement_score":0.0008878134,"about_ca_system_score_codex":0.0003965992,"about_ca_system_score_gemma":0.00018698089,"threshold_uncertainty_score":0.0028775334},"labels":[],"label_agreement":null},{"id":"W2122509181","doi":"10.1109/mwscas.2005.1594218","title":"Dynamic-effect compensating technique for stable a-Si:H AMOLED displays","year":2005,"lang":"en","type":"article","venue":"","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":5,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"AMOLED; Backplane; OLED; Materials science; Degradation (telecommunications); Computer science; Diode; Optoelectronics; Silicon; Pixel; Electronic engineering; Thin-film transistor; Active matrix; Computer hardware; Engineering; Nanotechnology; Telecommunications","score_opus":0.005895903668506235,"score_gpt":0.21922956013012385,"score_spread":0.21333365646161762,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2122509181","genre_codex":"empirical","genre_gemma":"methods","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"methods","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.5310443,0.0022465892,0.45559072,0.0004759403,0.0002475147,0.0001205671,0.00018637965,0.0029061106,0.0071818833],"genre_scores_gemma":[0.92978495,0.00040683858,0.067228824,0.00006724347,0.0000362314,0.0000309757,0.000042894662,0.000059000136,0.0023429778],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99992967,0.000008019054,0.0000036020758,0.000013465348,0.0000370676,0.000008209642],"domain_scores_gemma":[0.9998753,0.000036413312,0.00003118715,0.000015030006,0.00003217407,0.000009819146],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00009466632,0.00018663907,0.00013261383,0.00015771679,0.00016204335,0.00021822771,0.0005314131,0.00029977292,0.0008753956],"category_scores_gemma":[0.00027254486,0.00010908472,0.00010196114,0.00017622583,0.0001759347,0.00027029793,0.00015533062,0.00027442668,0.0002755493],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000040721618,0.000009797329,0.0001271862,0.00003889498,0.0000059712447,0.00007724627,0.00002633765,0.00106575,0.98258,0.0009299801,0.0003378812,0.01476024],"study_design_scores_gemma":[0.000025994395,0.00022609351,0.00079921976,0.000007736687,0.000018086886,0.00038555285,0.0000136250965,0.05040682,0.9403121,0.00045687088,0.0073313676,0.000016531474],"about_ca_topic_score_codex":0.0003482895,"about_ca_topic_score_gemma":0.00045698782,"teacher_disagreement_score":0.0008753956,"about_ca_system_score_codex":0.00021684261,"about_ca_system_score_gemma":0.00012518582,"threshold_uncertainty_score":0.0029284358},"labels":[],"label_agreement":null},{"id":"W2123002308","doi":"10.1557/proc-1066-a16-07","title":"Hydrogenated Nanocrystalline Silicon Thin Film Transistor Array for X-ray Detector Application","year":2008,"lang":"en","type":"article","venue":"MRS Proceedings","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":2,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Natural Sciences and Engineering Research Council of Canada; University of Waterloo","keywords":"Materials science; Thin-film transistor; Optoelectronics; Amorphous silicon; Plasma-enhanced chemical vapor deposition; Nanocrystalline silicon; Oxide thin-film transistor; Passivation; Threshold voltage; Chemical vapor deposition; Transistor; Silicon; Nanotechnology; Crystalline silicon; Voltage; Electrical engineering; Layer (electronics)","score_opus":0.01051360338295827,"score_gpt":0.19073424201419278,"score_spread":0.18022063863123453,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2123002308","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9251309,0.00406427,0.04564241,0.0011382021,0.0008241135,0.00014675301,0.0014250401,0.00164764,0.019980595],"genre_scores_gemma":[0.93046385,0.0013742178,0.050330985,0.000269413,0.000095164,0.000091872134,0.0006322231,0.0001592892,0.016582968],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99991775,0.000004501352,0.0000038537996,0.000025205414,0.000037734426,0.000010881846],"domain_scores_gemma":[0.9998789,0.00002149293,0.000016094404,0.00001937008,0.000048597463,0.000015498768],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000094766845,0.00019018633,0.00039118034,0.00014936709,0.00018866573,0.00042272123,0.00080897304,0.0003364174,0.0033886093],"category_scores_gemma":[0.00021422838,0.00020952,0.00017092787,0.00026332415,0.00012250427,0.00040999617,0.00019159143,0.00027020363,0.0009847301],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000052876123,0.000008397488,0.00014893751,0.000048023838,0.000013312738,0.00006104297,0.000014711721,0.0001156058,0.9957712,0.00024889325,0.00083510164,0.0026818723],"study_design_scores_gemma":[0.000020934474,0.00013294007,0.00094661285,0.000005436583,0.000030552725,0.0001900601,0.000031473606,0.00370171,0.9891101,0.0000816843,0.0057410183,0.0000075048383],"about_ca_topic_score_codex":0.00086362386,"about_ca_topic_score_gemma":0.0026287057,"teacher_disagreement_score":0.0033886093,"about_ca_system_score_codex":0.00047172263,"about_ca_system_score_gemma":0.00030143457,"threshold_uncertainty_score":0.011336029},"labels":[],"label_agreement":null},{"id":"W2123378075","doi":"10.1557/proc-0989-a12-02","title":"Segmented Amorphous Silicon n-i-p Photodiodes on Stainless-Steel Foils for Flexible Imaging Arrays","year":2007,"lang":"en","type":"article","venue":"MRS Proceedings","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":4,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Materials science; Photodiode; Amorphous silicon; Passivation; Optoelectronics; Amorphous solid; Fabrication; Polycrystalline silicon; Silicon; Diode; FOIL method; Electrode; Layer (electronics); Composite material; Thin-film transistor; Crystalline silicon","score_opus":0.011824303070424988,"score_gpt":0.22958987079208176,"score_spread":0.21776556772165678,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2123378075","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.95269436,0.0013773495,0.03718006,0.00022221215,0.0001963613,0.000089037625,0.00039678294,0.00057814247,0.0072657466],"genre_scores_gemma":[0.94552374,0.0004242597,0.04872966,0.000083878585,0.000031510433,0.000060317147,0.00027059196,0.00006400435,0.0048120795],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99980325,0.000021885311,0.000010884616,0.00006019291,0.00006897066,0.000034784498],"domain_scores_gemma":[0.9997706,0.00006426845,0.000041348634,0.000051859886,0.0000500909,0.000021939975],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00018560425,0.00030410927,0.0002590577,0.00025177855,0.0002889958,0.00039652415,0.00085813244,0.00041031782,0.0014320237],"category_scores_gemma":[0.0003500746,0.00044814192,0.00018497424,0.0002299634,0.00020854617,0.00042458213,0.00036078485,0.00031737323,0.0005343627],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00006989175,0.0000065836202,0.00014493775,0.000037487425,0.000004236661,0.000057149675,0.000025112797,0.00017592932,0.9967263,0.0002452784,0.00019829052,0.0023087848],"study_design_scores_gemma":[0.000023068047,0.0001846987,0.0018813198,0.000008141054,0.00001286649,0.00014828605,0.000047230562,0.0030883169,0.9915132,0.0001262181,0.0029558106,0.000010839268],"about_ca_topic_score_codex":0.00064078154,"about_ca_topic_score_gemma":0.002735798,"teacher_disagreement_score":0.0014320237,"about_ca_system_score_codex":0.0005022256,"about_ca_system_score_gemma":0.00027259398,"threshold_uncertainty_score":0.004790604},"labels":[],"label_agreement":null},{"id":"W2124616561","doi":"10.1557/proc-0989-a02-04","title":"Metastable Defects in Tritiated Amorphous Silicon","year":2007,"lang":"en","type":"article","venue":"MRS Proceedings","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Toronto","funders":"","keywords":"Dangling bond; Tritium; Materials science; Annealing (glass); Metastability; Silicon; Amorphous silicon; Atomic physics; Radiochemistry; Nuclear physics; Crystalline silicon; Optoelectronics; Chemistry; Physics; Metallurgy","score_opus":0.009764699360557051,"score_gpt":0.20252101811209017,"score_spread":0.19275631875153312,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2124616561","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99252397,0.0004941408,0.0018653969,0.000126922,0.000047081096,0.000012237059,0.000109713685,0.000086889886,0.004733725],"genre_scores_gemma":[0.9978254,0.00007127287,0.0002866323,0.00001683663,0.000007513309,0.000006578176,0.00006723024,0.000013927526,0.0017046342],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999316,0.000008035159,0.000003898842,0.000016463104,0.000024303268,0.000015666788],"domain_scores_gemma":[0.9998264,0.00008992932,0.00002757234,0.000023177885,0.000017554281,0.000015444368],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00018612282,0.00009831948,0.00020483455,0.00044143235,0.00036383487,0.0006255091,0.0005570111,0.00028922208,0.0030310594],"category_scores_gemma":[0.00049179594,0.00013977621,0.00009709911,0.00027066565,0.00044363356,0.00053184084,0.0003077334,0.00036578838,0.0002580138],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0010618473,0.00013740899,0.00519615,0.00022600402,0.000034067984,0.0015916761,0.0006522335,0.0042655645,0.9420353,0.034055237,0.0014504696,0.009294003],"study_design_scores_gemma":[0.00013801103,0.0009834055,0.008795477,0.000021976217,0.00004485145,0.0016886132,0.00062173174,0.01989842,0.9576829,0.005317452,0.004765424,0.000041592244],"about_ca_topic_score_codex":0.000961212,"about_ca_topic_score_gemma":0.0015219714,"teacher_disagreement_score":0.0030310594,"about_ca_system_score_codex":0.0005453333,"about_ca_system_score_gemma":0.00026840376,"threshold_uncertainty_score":0.010139883},"labels":[],"label_agreement":null},{"id":"W2125277991","doi":"10.1109/ted.2004.838452","title":"Stability Analysis of Current Programmed a-Si:H AMOLED Pixel Circuits","year":2004,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":29,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"AMOLED; Pixel; Electronic circuit; Brightness; Transistor; Current (fluid); Thin-film transistor; Electronic engineering; Diode; Stability (learning theory); Optoelectronics; Current mirror; Computer science; Materials science; Electrical engineering; Engineering; Optics; Physics; Voltage; Artificial intelligence; Active matrix; Nanotechnology","score_opus":0.020621817597021263,"score_gpt":0.2511571305375792,"score_spread":0.23053531294055796,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2125277991","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.84524244,0.0004403971,0.14622201,0.00020581593,0.000037885377,0.000071255185,0.00023670706,0.0010606938,0.006482858],"genre_scores_gemma":[0.99076754,0.000046692116,0.00761943,0.000021029535,0.0000069850166,0.000020368103,0.0000559426,0.00004602612,0.0014158385],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9997744,0.00002115407,0.000010071826,0.0000523151,0.00011565553,0.000026461936],"domain_scores_gemma":[0.99944824,0.0002311431,0.0000721194,0.00006563009,0.0001623001,0.000020660802],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00019599439,0.0001716298,0.00015366919,0.00039308288,0.0002754009,0.00044334267,0.0006486897,0.0003507434,0.0025734664],"category_scores_gemma":[0.0010871472,0.00010669174,0.00017101182,0.00014865522,0.00030744015,0.0005546633,0.00017526044,0.00035906956,0.00035126694],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0005024976,0.000095160336,0.0036982058,0.00015812294,0.00009594172,0.00036636324,0.00024941555,0.059097804,0.8796741,0.012157046,0.0008553693,0.04304993],"study_design_scores_gemma":[0.00001730335,0.00019133884,0.002197924,0.000008742124,0.000018491375,0.00017873135,0.000031307707,0.645351,0.3485352,0.0023433277,0.0011088094,0.00001776759],"about_ca_topic_score_codex":0.00067601324,"about_ca_topic_score_gemma":0.0006178083,"teacher_disagreement_score":0.0025734664,"about_ca_system_score_codex":0.0007523309,"about_ca_system_score_gemma":0.0002253001,"threshold_uncertainty_score":0.0086090565},"labels":[],"label_agreement":null},{"id":"W2127113267","doi":"10.1109/jssc.2008.922404","title":"An Assessment of µ-Czochralski, Single-Grain Silicon Thin-Film Transistor Technology for Large-Area, Sensor and 3-D Electronic Integration","year":2008,"lang":"en","type":"article","venue":"IEEE Journal of Solid-State Circuits","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":21,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"","funders":"University of Toronto; University of Calgary","keywords":"Thin-film transistor; Materials science; Amplifier; Transistor; Electrical engineering; Optoelectronics; Electronic circuit; Silicon on insulator; Cascode; CMOS; Silicon; Electronic engineering; Voltage; Engineering; Nanotechnology; Layer (electronics)","score_opus":0.019203721130267686,"score_gpt":0.2743565356541852,"score_spread":0.2551528145239175,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2127113267","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.8456905,0.030974519,0.0912598,0.0012278605,0.00030748986,0.0004466099,0.00094844843,0.0009321221,0.028212607],"genre_scores_gemma":[0.8621646,0.012051322,0.117373474,0.00015043214,0.000054822318,0.000136666,0.0005778687,0.00007462621,0.007416218],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99961734,0.000036302856,0.00002015241,0.000057223904,0.00023567285,0.000033307748],"domain_scores_gemma":[0.9994174,0.00014201752,0.000065032196,0.000055927652,0.00028118154,0.000038404105],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0008537385,0.00040408145,0.00025272253,0.00033521492,0.00023148727,0.0006983665,0.00071926217,0.00073718367,0.0014409244],"category_scores_gemma":[0.0010588262,0.00015858858,0.00030190137,0.00046183736,0.00019051612,0.0010069391,0.00016067032,0.0003119757,0.000542262],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0001439847,0.000043046337,0.002082494,0.0003663596,0.000034186774,0.00015405417,0.00005752836,0.0032065592,0.9485621,0.0028392544,0.0008852031,0.0416253],"study_design_scores_gemma":[0.00004526139,0.0022365337,0.011243788,0.00007814241,0.00012545001,0.0013682513,0.00014290136,0.023116486,0.9308441,0.00092859357,0.029840672,0.00002976893],"about_ca_topic_score_codex":0.0021923024,"about_ca_topic_score_gemma":0.0054626362,"teacher_disagreement_score":0.0021923024,"about_ca_system_score_codex":0.0009325338,"about_ca_system_score_gemma":0.0007749445,"threshold_uncertainty_score":0.0067660213},"labels":[],"label_agreement":null},{"id":"W2127219797","doi":"10.1109/pvsc.2008.4922675","title":"Process development for tailoring the emitter on sphere shaped silicon structures","year":2008,"lang":"en","type":"article","venue":"Conference record of the IEEE Photovoltaic Specialists Conference","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Common emitter; Etching (microfabrication); Silicon; Materials science; Controllability; Dry etching; Process (computing); Optoelectronics; Photodiode; Reactive-ion etching; Thinning; Reliability (semiconductor); Nanotechnology; Computer science; Physics; Layer (electronics)","score_opus":0.05144465306528351,"score_gpt":0.24627382671779047,"score_spread":0.19482917365250696,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2127219797","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.47810552,0.0024362854,0.5063424,0.00025265498,0.0002922529,0.0006241272,0.00095642527,0.0018061768,0.009184117],"genre_scores_gemma":[0.57073104,0.003634084,0.41501594,0.00015274556,0.00006821153,0.0003563206,0.001449334,0.00038119318,0.008211067],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99985814,0.0000071818404,0.000008158995,0.000030308245,0.000079873294,0.000016331202],"domain_scores_gemma":[0.99984443,0.000021142763,0.000034437566,0.00002545566,0.00005423594,0.000020267787],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00029359054,0.00043130698,0.00030540017,0.00021788238,0.00018774926,0.00039966262,0.0005330426,0.00031299188,0.00087226735],"category_scores_gemma":[0.0003067106,0.00022985358,0.00026322177,0.00022315665,0.00016915878,0.0002865638,0.00029699193,0.00061079866,0.00077106466],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00001161206,0.000012247422,0.00007522933,0.00006347269,0.0000033579706,0.000044147335,0.000022663418,0.00041165718,0.99414355,0.00037270584,0.00011876469,0.004720628],"study_design_scores_gemma":[0.000013959102,0.00020280229,0.00058749365,0.0000047449494,0.00000901428,0.00019595124,0.00001311799,0.0036638516,0.9882703,0.00011710954,0.006911598,0.000010086989],"about_ca_topic_score_codex":0.00048137616,"about_ca_topic_score_gemma":0.00089949614,"teacher_disagreement_score":0.00087226735,"about_ca_system_score_codex":0.00027014283,"about_ca_system_score_gemma":0.0006070397,"threshold_uncertainty_score":0.002918005},"labels":[],"label_agreement":null},{"id":"W2128864718","doi":"10.1109/wcpec.2006.279800","title":"Low Temperature Microcrystalline Silicon Solar Cells Prepared by Hot-Wire Chemical Vapor Deposition","year":2006,"lang":"en","type":"article","venue":"","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":2,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Simon Fraser University","funders":"","keywords":"Silane; Chemical vapor deposition; Materials science; Raman spectroscopy; Silicon; Microcrystalline; Substrate (aquarium); Chemical engineering; Graphite; Fourier transform infrared spectroscopy; Deposition (geology); X-ray photoelectron spectroscopy; Microcrystalline silicon; Solar cell; Analytical Chemistry (journal); Crystalline silicon; Optoelectronics; Composite material; Amorphous silicon; Chemistry; Optics; Organic chemistry; Crystallography","score_opus":0.0020078712520421468,"score_gpt":0.15766124743565052,"score_spread":0.15565337618360836,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2128864718","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9785759,0.002054644,0.009250763,0.00012694362,0.00008886552,0.000103395265,0.0016345877,0.00035831833,0.007806586],"genre_scores_gemma":[0.96241397,0.001846272,0.025470907,0.000072129806,0.000038984246,0.00009483156,0.0015255717,0.0001063413,0.008430919],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99989176,0.0000046143377,0.000005403502,0.000028790177,0.000051200008,0.000018244158],"domain_scores_gemma":[0.9999119,0.000018761286,0.000016238011,0.000015048944,0.000028135943,0.000009903432],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000085439744,0.00020722984,0.00040964695,0.00014737359,0.00018378528,0.00026073374,0.00041888573,0.00021912424,0.0024808769],"category_scores_gemma":[0.00013971853,0.0001850231,0.00013591083,0.00026564408,0.00015733633,0.0002342144,0.00015735718,0.00041642462,0.0008127224],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000021648499,0.000008462084,0.00012273238,0.00004641846,0.000006061621,0.000026270562,0.000010152186,0.000091482245,0.9977723,0.0001273058,0.00018453064,0.0015825599],"study_design_scores_gemma":[0.000008900428,0.00006649874,0.0013716583,0.000002721385,0.000011201284,0.00007174256,0.000008976071,0.00060895365,0.99546766,0.000023962983,0.0023548044,0.0000029588966],"about_ca_topic_score_codex":0.0011134152,"about_ca_topic_score_gemma":0.0040649357,"teacher_disagreement_score":0.0024808769,"about_ca_system_score_codex":0.0004134369,"about_ca_system_score_gemma":0.00019227846,"threshold_uncertainty_score":0.008299291},"labels":[],"label_agreement":null},{"id":"W2129515555","doi":"10.1109/ted.2010.2093770","title":"Laser-Induced Resistance Fine Tuning of Integrated Polysilicon Thin-Film Resistors","year":2010,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":12,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Polytechnique Montréal","funders":"Canada Research Chairs","keywords":"Materials science; Resistor; Polysilicon depletion effect; Optoelectronics; Fluence; Thin film; Raman spectroscopy; Laser; Optics; Transistor; Electrical engineering; Voltage; Nanotechnology; Gate oxide","score_opus":0.008154485192180396,"score_gpt":0.2143452573957264,"score_spread":0.206190772203546,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2129515555","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9804277,0.0006659542,0.016963476,0.00006787163,0.00004961027,0.000021851147,0.00007174452,0.00040592658,0.0013257981],"genre_scores_gemma":[0.9903487,0.00020677735,0.008099846,0.000025862466,0.000013525393,0.000015910367,0.00004167294,0.000041934712,0.0012056213],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999037,0.0000060680045,0.0000062877884,0.000030194857,0.000039274364,0.000014563799],"domain_scores_gemma":[0.9998597,0.000035520225,0.00004510628,0.000027625321,0.000023313889,0.000008765968],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00007878189,0.00028524912,0.00017801466,0.00016825505,0.00015260439,0.00015615097,0.000323954,0.00022376173,0.0009508128],"category_scores_gemma":[0.0002994456,0.00016681463,0.00009881915,0.0001344881,0.00020451003,0.00025889993,0.00014724126,0.00025519638,0.00018914105],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000013746903,0.0000041246135,0.000058680613,0.0000181415,0.0000020231078,0.000032242664,0.000019071675,0.00016351751,0.9977847,0.000030233974,0.000026421165,0.0018470364],"study_design_scores_gemma":[0.0000061119,0.000117447,0.0012048694,0.0000023576556,0.0000059398662,0.000114623326,0.000018131546,0.0027888129,0.99484164,0.00003501189,0.00086093723,0.0000040644627],"about_ca_topic_score_codex":0.00024083223,"about_ca_topic_score_gemma":0.0008682527,"teacher_disagreement_score":0.0009508128,"about_ca_system_score_codex":0.00016337821,"about_ca_system_score_gemma":0.000097046715,"threshold_uncertainty_score":0.0031808019},"labels":[],"label_agreement":null},{"id":"W2130820470","doi":"10.1109/pvsc.2009.5411264","title":"Influence of different RTP temperature profiles on low temperature epitaxially grown PECVD Si emitters","year":2009,"lang":"en","type":"article","venue":"","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Materials science; Plasma-enhanced chemical vapor deposition; High-resolution transmission electron microscopy; Epitaxy; Analytical Chemistry (journal); Annealing (glass); Secondary ion mass spectrometry; Common emitter; Silicon; Transmission electron microscopy; Optoelectronics; Chemistry; Ion; Nanotechnology; Layer (electronics)","score_opus":0.00330291774956217,"score_gpt":0.18017502772997962,"score_spread":0.17687210998041744,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2130820470","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9957912,0.00073303946,0.0025982298,0.00002633862,0.000017178567,0.000020232419,0.00021770579,0.00008485993,0.0005111748],"genre_scores_gemma":[0.99334234,0.0006580736,0.004733295,0.00002288442,0.0000067144947,0.00004068605,0.00025071984,0.00009941269,0.0008458563],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99978894,0.000019785237,0.00001754954,0.000077580036,0.000060614002,0.00003557324],"domain_scores_gemma":[0.9996942,0.00011593159,0.00007139491,0.000036736586,0.00006088111,0.000020820546],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00021261553,0.00041678164,0.0003247831,0.00015593923,0.00012824227,0.0004050427,0.00033217584,0.0003595858,0.00065070734],"category_scores_gemma":[0.000613649,0.00028817917,0.00019761697,0.00026363542,0.00018459103,0.0002630542,0.00019687918,0.0005389212,0.0002101891],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00007846128,0.000010998077,0.00016774167,0.00003730376,0.0000057423945,0.000042757627,0.000030306517,0.00018545776,0.99858046,0.00001675205,0.000015506535,0.0008285887],"study_design_scores_gemma":[0.000004541048,0.000103233295,0.0014950507,0.0000035471103,0.000009469656,0.000027651451,0.000012691792,0.0006938514,0.997421,0.00000571572,0.00021920826,0.000004012164],"about_ca_topic_score_codex":0.00049243856,"about_ca_topic_score_gemma":0.00083439465,"teacher_disagreement_score":0.00065070734,"about_ca_system_score_codex":0.00026131884,"about_ca_system_score_gemma":0.00012418663,"threshold_uncertainty_score":0.0021768212},"labels":[],"label_agreement":null},{"id":"W2131474938","doi":"10.1109/leos.2005.1548313","title":"A fast driving scheme for a-Si:H AMOLED displays based on voltage feedback","year":2005,"lang":"en","type":"article","venue":"","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":5,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"AMOLED; OLED; Voltage; Scheme (mathematics); Diode; Optoelectronics; Computer science; Materials science; Column (typography); Electronic engineering; Electrical engineering; Engineering; Thin-film transistor; Nanotechnology; Telecommunications; Active matrix","score_opus":0.0078759550408182,"score_gpt":0.2038951934668871,"score_spread":0.1960192384260689,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2131474938","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.5926501,0.0017241089,0.3904567,0.00068631046,0.0006044868,0.0003638367,0.0007876933,0.0043992014,0.008327547],"genre_scores_gemma":[0.8460328,0.0005179584,0.14506063,0.000284654,0.00017834493,0.00014442342,0.000261077,0.00018910036,0.007331039],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998822,0.000010359967,0.000005200716,0.000028432516,0.000055884604,0.00001787955],"domain_scores_gemma":[0.9997558,0.0000942764,0.000033210097,0.000028859873,0.00005505574,0.00003278102],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00012188078,0.0002882484,0.00017378292,0.0002297725,0.00023180309,0.00036000647,0.0008384846,0.0004280287,0.00164786],"category_scores_gemma":[0.00021982842,0.00023716834,0.00015071263,0.00012449063,0.00025626138,0.0004960884,0.00027608813,0.00067294517,0.00061925704],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000051672825,0.000018340646,0.00009548732,0.000040344865,0.000003902027,0.000040053957,0.000018044097,0.00008870416,0.9886064,0.000506657,0.00034290517,0.010187597],"study_design_scores_gemma":[0.000019048673,0.0002281345,0.00073494256,0.000004174784,0.00000767468,0.0003184783,0.000008567572,0.0050344216,0.98815,0.00014260384,0.0053282464,0.000023704177],"about_ca_topic_score_codex":0.00042436668,"about_ca_topic_score_gemma":0.0010219077,"teacher_disagreement_score":0.00164786,"about_ca_system_score_codex":0.0002328182,"about_ca_system_score_gemma":0.00022147402,"threshold_uncertainty_score":0.005512655},"labels":[],"label_agreement":null},{"id":"W2131998397","doi":"10.1557/proc-0989-a19-02","title":"Preliminary Results on Large Area X-ray a-SiC:H Multilayer Detectors with Optically Addressed Readout","year":2007,"lang":"en","type":"article","venue":"MRS Proceedings","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Materials science; Photocurrent; Biasing; Optoelectronics; Scintillator; PIN diode; X-ray detector; Diode; Detector; Layer (electronics); Voltage; Optics; Nanotechnology; Electrical engineering; Physics","score_opus":0.013486299936258425,"score_gpt":0.213178781093998,"score_spread":0.19969248115773958,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2131998397","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9823147,0.0013781022,0.009588453,0.00021149367,0.00005716554,0.00023923605,0.0005418434,0.00042385972,0.005245205],"genre_scores_gemma":[0.976779,0.0005671735,0.017819282,0.00011353417,0.00006263755,0.00010836524,0.00040987474,0.00008145741,0.004058646],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9992976,0.00022683802,0.000038929775,0.000084189254,0.00022110563,0.00013129029],"domain_scores_gemma":[0.9990483,0.00036610742,0.000109947076,0.0001191615,0.00025103372,0.00010540826],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0013219027,0.00076310284,0.0007325058,0.00032838885,0.0009740133,0.0009815478,0.00076196814,0.0010019285,0.0026285695],"category_scores_gemma":[0.0012557638,0.00041398802,0.0005105063,0.0005641865,0.0006769555,0.00070691,0.0006679059,0.00051336305,0.00061437796],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0017040512,0.00032566444,0.0033885692,0.0002929768,0.00014898575,0.00023476197,0.00036130537,0.001593673,0.9844007,0.00047125306,0.00081872067,0.0062593403],"study_design_scores_gemma":[0.00014341368,0.0023260599,0.0099653555,0.000022105405,0.00014271935,0.0001770585,0.00013262131,0.002689131,0.9808005,0.00012451492,0.0034330918,0.000043387234],"about_ca_topic_score_codex":0.004028619,"about_ca_topic_score_gemma":0.004013727,"teacher_disagreement_score":0.004028619,"about_ca_system_score_codex":0.000757881,"about_ca_system_score_gemma":0.0004139987,"threshold_uncertainty_score":0.008793414},"labels":[],"label_agreement":null},{"id":"W2133158171","doi":"10.1109/mwscas.2005.1594424","title":"Fuzzy current control using current mode WTA-LTA circuits in flexible organic displays","year":2005,"lang":"en","type":"article","venue":"","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":3,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"OLED; Pixel; Electronic circuit; Transconductance; Current (fluid); Diode; Computer science; Electronic engineering; Degradation (telecommunications); Fuzzy logic; Electrical engineering; Optoelectronics; Materials science; Engineering; Artificial intelligence; Voltage; Transistor; Nanotechnology","score_opus":0.0223735038742969,"score_gpt":0.2636222812251828,"score_spread":0.24124877735088587,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2133158171","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.5088815,0.00069559756,0.48410842,0.0002088703,0.000087450484,0.000069114736,0.000041324405,0.0011867937,0.0047208113],"genre_scores_gemma":[0.97327965,0.00006288239,0.025719002,0.000022062704,0.000010591616,0.000011533244,0.000007849328,0.000008753269,0.00087771215],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99984324,0.000023241493,0.000011872858,0.000036283745,0.00006842967,0.000016932863],"domain_scores_gemma":[0.9996978,0.000095478725,0.000055714827,0.0000312508,0.00010590032,0.000013723306],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0002647447,0.00019752883,0.00015847142,0.00021207535,0.00026699158,0.0005768066,0.00065134396,0.00022303304,0.00070468395],"category_scores_gemma":[0.00046609368,0.00013175422,0.00015056238,0.00014667345,0.0002974263,0.00042564573,0.00015793214,0.00032139305,0.00013898597],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00049973925,0.00012454105,0.0012957455,0.0001133384,0.00004877228,0.000175385,0.00030138073,0.026407694,0.7397599,0.006074317,0.00043755517,0.22476155],"study_design_scores_gemma":[0.000054329554,0.0007945123,0.0024437553,0.000017132992,0.000050817394,0.00028873738,0.000067971356,0.5419006,0.44943345,0.0021578535,0.0027469252,0.000044047418],"about_ca_topic_score_codex":0.00097195903,"about_ca_topic_score_gemma":0.0016603258,"teacher_disagreement_score":0.00097195903,"about_ca_system_score_codex":0.00032515483,"about_ca_system_score_gemma":0.00015962492,"threshold_uncertainty_score":0.0023592114},"labels":[],"label_agreement":null},{"id":"W2133208445","doi":"10.1149/1.1502258","title":"Developments in Luminescence and Display Materials Over the Last 100 Years as Reflected in Electrochemical Society Publications","year":2002,"lang":"en","type":"article","venue":"Journal of The Electrochemical Society","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":63,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Institute for Microstructural Sciences","funders":"","keywords":"Luminescence; Compendium; Materials science; Engineering physics; Optoelectronics; History; Engineering; Archaeology","score_opus":0.008821081178958867,"score_gpt":0.22023812443411864,"score_spread":0.21141704325515978,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2133208445","genre_codex":"other","genre_gemma":"review","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"review","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.13301049,0.13465923,0.02604463,0.054562118,0.030066887,0.00020721463,0.003391742,0.0017044946,0.6163533],"genre_scores_gemma":[0.24928787,0.08077602,0.024454482,0.0035289705,0.0049224515,0.000047150304,0.0019014489,0.00035002144,0.6347316],"study_design_codex":"design_other","study_design_gemma":"not_applicable","domain_scores_codex":[0.9989605,0.000120501514,0.00006044468,0.00009945781,0.0006787445,0.00008021507],"domain_scores_gemma":[0.9967589,0.0005846405,0.00021989852,0.00016864708,0.0019175512,0.00035028064],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0017922557,0.0003061447,0.00023087185,0.0012536448,0.0005231842,0.0018896044,0.0003986081,0.00063256297,0.021738343],"category_scores_gemma":[0.0036018072,0.0001373037,0.00023802713,0.0019545644,0.00037393835,0.001325016,0.0006783077,0.0010178632,0.00871601],"study_design_candidate":"not_applicable","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0003709962,0.00021268488,0.004810306,0.0013598675,0.000028367262,0.0005588685,0.0005355134,0.00044608157,0.109594956,0.034723274,0.14643659,0.7009225],"study_design_scores_gemma":[0.000010742629,0.0001685897,0.012828828,0.000100152116,0.00001794817,0.00096737745,0.0002366617,0.00048363087,0.04370529,0.0027642762,0.9386896,0.000026875901],"about_ca_topic_score_codex":0.0006680507,"about_ca_topic_score_gemma":0.0017808692,"teacher_disagreement_score":0.021738343,"about_ca_system_score_codex":0.00094408006,"about_ca_system_score_gemma":0.0013075374,"threshold_uncertainty_score":0.07272202},"labels":[],"label_agreement":null},{"id":"W2133607247","doi":"10.1557/opl.2013.750","title":"A Vertical PN Junction Utilizing the Impurity Photovoltaic Effect for the Enhancement of Ultra-thin Film Silicon Solar Cells","year":2013,"lang":"en","type":"article","venue":"MRS Proceedings","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":2,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McMaster University","funders":"Natural Sciences and Engineering Research Council of Canada; McMaster University","keywords":"Materials science; Optoelectronics; Indium; Dopant; Silicon; Solar cell; Doping; Short circuit; Band gap; Photovoltaic system; Energy conversion efficiency; Open-circuit voltage; Plasmonic solar cell; Thin film; Trapping; Polymer solar cell; Voltage; Nanotechnology; Electrical engineering","score_opus":0.008752538806258496,"score_gpt":0.2030890015680987,"score_spread":0.1943364627618402,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2133607247","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.95735973,0.0024484796,0.026862351,0.00040259724,0.0003458131,0.000047437046,0.00022175879,0.00033547962,0.011976426],"genre_scores_gemma":[0.9804787,0.0011698197,0.012781408,0.00007574816,0.000056900022,0.0000192032,0.000103601844,0.000036339727,0.005278257],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999474,0.0000035461317,0.0000020216467,0.000010187746,0.000026833945,0.000010033148],"domain_scores_gemma":[0.9999683,0.000005023561,0.0000044743797,0.0000029924593,0.0000108154045,0.000008298803],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000071451235,0.00014651062,0.00020655064,0.000111672794,0.00022217366,0.0003984464,0.00069457816,0.00043049533,0.0007890144],"category_scores_gemma":[0.00008844399,0.00015979989,0.00018195392,0.00018309438,0.00012428021,0.0003395605,0.00023931306,0.00033875686,0.00034712916],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000033543987,0.000020604431,0.000091107344,0.000047028912,0.0000054680304,0.00007399526,0.000009837153,0.00020961554,0.995758,0.00064927945,0.00016489511,0.0029365153],"study_design_scores_gemma":[0.000018536868,0.00025897738,0.00077758555,0.000009648788,0.000029664801,0.00027006312,0.000021736583,0.01015418,0.98341286,0.00023367512,0.0048042117,0.000008882457],"about_ca_topic_score_codex":0.00053971104,"about_ca_topic_score_gemma":0.0012950901,"teacher_disagreement_score":0.0007890144,"about_ca_system_score_codex":0.00021447589,"about_ca_system_score_gemma":0.00018991994,"threshold_uncertainty_score":0.002639532},"labels":[],"label_agreement":null},{"id":"W2134308046","doi":"10.1557/proc-0910-a22-13","title":"Nanocrystalline Silicon Films Deposited by RF PECVD for Bottom-gate Thin-film Transistors","year":2006,"lang":"en","type":"article","venue":"MRS Proceedings","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":2,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Materials science; Plasma-enhanced chemical vapor deposition; Optoelectronics; Crystallinity; Nanocrystalline silicon; Amorphous silicon; Thin-film transistor; Silane; Raman spectroscopy; Thin film; Silicon; Layer (electronics); Nanotechnology; Crystalline silicon; Composite material; Optics","score_opus":0.005537819827582408,"score_gpt":0.18427732651922135,"score_spread":0.17873950669163893,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2134308046","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.98477745,0.0021908642,0.005189303,0.00034561896,0.00022916812,0.000053720833,0.0005995745,0.00023212722,0.0063823094],"genre_scores_gemma":[0.9883463,0.0010908953,0.0065060244,0.000065957385,0.00003206628,0.000031984,0.00033321674,0.00008072902,0.0035129113],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999031,0.0000033841277,0.0000059002286,0.000017250257,0.000045290184,0.000025083613],"domain_scores_gemma":[0.9999049,0.000024436695,0.000017044667,0.000016413689,0.000024823932,0.000012376617],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00008662454,0.00021130552,0.00040408626,0.00016098392,0.0002934632,0.00042594652,0.0004168953,0.00028428205,0.0016934115],"category_scores_gemma":[0.0002833658,0.00030512572,0.00016227108,0.00016724656,0.000118625074,0.00030644023,0.00017788721,0.00045090602,0.00049570954],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000027859123,0.000004638359,0.000054389213,0.000039355047,0.000004543,0.000036586684,0.000014321882,0.00009382999,0.9985714,0.00006808047,0.00018955389,0.0008954473],"study_design_scores_gemma":[0.000009911391,0.00003219632,0.00064520503,0.0000048621137,0.0000069166276,0.000039132858,0.000015090874,0.001270478,0.9970595,0.000029119063,0.0008843854,0.0000032189826],"about_ca_topic_score_codex":0.0026373472,"about_ca_topic_score_gemma":0.008610259,"teacher_disagreement_score":0.0026373472,"about_ca_system_score_codex":0.0005618251,"about_ca_system_score_gemma":0.00030188754,"threshold_uncertainty_score":0.0056650043},"labels":[],"label_agreement":null},{"id":"W2134311122","doi":"10.1557/opl.2013.599","title":"The dependence of the crystalline volume fraction on the crystallite size for hydrogenated nanocrystalline silicon based solar cells","year":2013,"lang":"en","type":"article","venue":"MRS Proceedings","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":3,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of British Columbia, Okanagan Campus; University of British Columbia","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Materials science; Crystallite; Raman spectroscopy; Nanocrystalline material; Volume fraction; Scherrer equation; Impurity; Nanocrystalline silicon; Silicon; Analytical Chemistry (journal); Crystalline silicon; Polycrystalline silicon; Crystallography; Chemical engineering; Nanotechnology; Optics; Composite material; Metallurgy; Chromatography; Organic chemistry","score_opus":0.006940307113612746,"score_gpt":0.17812356212154715,"score_spread":0.1711832550079344,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2134311122","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99578154,0.0009953751,0.001407962,0.000088878674,0.000009744739,0.00000480655,0.00029120053,0.000053339892,0.0013671158],"genre_scores_gemma":[0.99905473,0.00021951455,0.0002160637,0.000008696727,0.0000024621438,0.000003476888,0.00013928053,0.000013770572,0.00034195255],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99992096,0.000004698534,0.0000051644756,0.000019020084,0.000035054556,0.000015134298],"domain_scores_gemma":[0.9995975,0.000247243,0.000043652097,0.00002544942,0.00007318555,0.000013007407],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00014316018,0.000117619355,0.00023363007,0.00016977152,0.00016665118,0.0004150504,0.00036072344,0.00018274414,0.0012510498],"category_scores_gemma":[0.00066832197,0.00014429068,0.00010927587,0.00018594453,0.00016254876,0.00040970373,0.00011846322,0.00021357535,0.00020201154],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00022585163,0.000021309559,0.0014725039,0.000046369532,0.0000128568445,0.00007403169,0.000036565118,0.0027146768,0.99067736,0.00031732823,0.000118903365,0.0042822547],"study_design_scores_gemma":[0.000004325297,0.000066372544,0.004008589,0.0000032666312,0.000008763042,0.000037645965,0.00003409626,0.007816862,0.9874987,0.00009736028,0.00041741863,0.000006618282],"about_ca_topic_score_codex":0.0023178072,"about_ca_topic_score_gemma":0.0043187723,"teacher_disagreement_score":0.0023178072,"about_ca_system_score_codex":0.00036921882,"about_ca_system_score_gemma":0.0001810483,"threshold_uncertainty_score":0.0046085715},"labels":[],"label_agreement":null},{"id":"W2135210755","doi":"10.1116/1.582244","title":"1/f noise in <i>p</i>-type amorphous silicon","year":2000,"lang":"en","type":"article","venue":"Journal of Vacuum Science & Technology A Vacuum Surfaces and Films","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":7,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Toronto; University of Saskatchewan","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Noise (video); Doping; Condensed matter physics; Noise power; Amorphous silicon; Flicker noise; Noise spectral density; Infrasound; Materials science; Atmospheric temperature range; Amorphous solid; Silicon; Physics; Analytical Chemistry (journal); Noise figure; Chemistry; Power (physics); Optoelectronics; Thermodynamics; Crystallography; Crystalline silicon; Quantum mechanics","score_opus":0.006686252469575562,"score_gpt":0.21073375781922365,"score_spread":0.2040475053496481,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2135210755","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.998061,0.00006286999,0.0013939561,0.00002618198,0.000004433556,0.000004293918,0.00008951083,0.000047260473,0.000310491],"genre_scores_gemma":[0.99920976,0.000032550994,0.0005226095,0.0000067884193,0.0000049214955,0.000004333796,0.00008330272,0.0000068258505,0.00012893054],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99969316,0.00003843324,0.000014320698,0.00008751684,0.00010704365,0.000059639933],"domain_scores_gemma":[0.9995134,0.00021239756,0.00009466107,0.00004674048,0.00009696358,0.00003584872],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00024805975,0.00031134696,0.00025590247,0.0005666118,0.00026566634,0.00034551314,0.0003536002,0.00039824078,0.00041068444],"category_scores_gemma":[0.0011034182,0.00013760739,0.0001428633,0.00039505534,0.0005497681,0.00031744794,0.00017029942,0.00024195008,0.0001146033],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00032220868,0.00005294482,0.011947604,0.000045557445,0.000037128793,0.00046729544,0.0002945164,0.0034410742,0.9782136,0.00032487238,0.00011036121,0.004742909],"study_design_scores_gemma":[0.00003104132,0.0009727952,0.08799721,0.000018580431,0.000058126156,0.0010293571,0.00019660036,0.035471696,0.8727036,0.0005189636,0.0009501966,0.00005175856],"about_ca_topic_score_codex":0.0015307355,"about_ca_topic_score_gemma":0.0014578368,"teacher_disagreement_score":0.0015307355,"about_ca_system_score_codex":0.00042712138,"about_ca_system_score_gemma":0.00010224075,"threshold_uncertainty_score":0.0030990243},"labels":[],"label_agreement":null},{"id":"W2135543891","doi":"10.1109/newcas.2006.250909","title":"Low-Cost Stable a-Si:H AMOLED Display for Portable Applications","year":2006,"lang":"en","type":"article","venue":"","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":4,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"AMOLED; Backplane; OLED; Active matrix; Thin-film transistor; Materials science; Transistor; Power consumption; Computer science; Optoelectronics; Computer hardware; Power (physics); Electrical engineering; Nanotechnology; Engineering","score_opus":0.005694883728502438,"score_gpt":0.19568810640903647,"score_spread":0.18999322268053404,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2135543891","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.7813531,0.00567116,0.17225206,0.001002089,0.00046958137,0.00023163178,0.00046395618,0.0023633766,0.036193103],"genre_scores_gemma":[0.9224867,0.0014849623,0.06471001,0.00014900215,0.00013644679,0.00005459113,0.00014865909,0.000095640346,0.0107339015],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999311,0.00000534714,0.000003286517,0.000013330669,0.00003945745,0.0000074191253],"domain_scores_gemma":[0.99992394,0.000017409908,0.0000148484005,0.000012389632,0.00001743799,0.000013978771],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00008224917,0.00021588766,0.00017216823,0.00022636422,0.00022549245,0.0003581137,0.0005200432,0.00055617763,0.0026226244],"category_scores_gemma":[0.00012478918,0.00015921146,0.0001789923,0.00019992043,0.00013109152,0.0005187535,0.00021126302,0.0003467696,0.001383267],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000035610392,0.000016342607,0.0001438308,0.000043484964,0.0000035429218,0.00007377541,0.0000140625425,0.00010101141,0.98463666,0.00069847086,0.00056975597,0.013663579],"study_design_scores_gemma":[0.000046336772,0.00053329155,0.0020194128,0.000013945235,0.000020798007,0.0009183655,0.000029647417,0.009892318,0.96719044,0.00042481598,0.018880261,0.00003037739],"about_ca_topic_score_codex":0.0001527577,"about_ca_topic_score_gemma":0.00031898,"teacher_disagreement_score":0.0026226244,"about_ca_system_score_codex":0.00017322606,"about_ca_system_score_gemma":0.00013181302,"threshold_uncertainty_score":0.008773565},"labels":[],"label_agreement":null},{"id":"W2135684160","doi":"10.1109/pvsc.2009.5411466","title":"Back Amorphous-Crystalline Silicon Heterojunction (bach) photovoltaic device","year":2009,"lang":"en","type":"article","venue":"","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":14,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Toronto","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Passivation; Amorphous silicon; Crystalline silicon; Photovoltaic system; Materials science; Heterojunction; Amorphous solid; Energy conversion efficiency; Solar cell; Silicon; Optoelectronics; Fabrication; Range (aeronautics); Nanotechnology; Electrical engineering; Chemistry; Crystallography; Engineering; Composite material","score_opus":0.01151052513765466,"score_gpt":0.20090204833454592,"score_spread":0.18939152319689126,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2135684160","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.96461815,0.0007579548,0.011645638,0.00011984046,0.000064116066,0.00005615213,0.0010767635,0.00041748167,0.02124388],"genre_scores_gemma":[0.982669,0.00045997262,0.009288295,0.00007943298,0.00001987418,0.000023606914,0.00062883995,0.000018556264,0.0068123788],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998698,0.000008751123,0.0000065063464,0.000028046088,0.000064317755,0.000022417022],"domain_scores_gemma":[0.9998983,0.000020230525,0.000013678533,0.000021430878,0.000034342862,0.000011936637],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000112077956,0.00013301657,0.00030129982,0.00019170839,0.00030476812,0.0005567354,0.00033358394,0.00028109128,0.0030616259],"category_scores_gemma":[0.00017369098,0.00010727281,0.00021477774,0.00024999122,0.00020047247,0.00036912854,0.00030896103,0.00025830203,0.0007036096],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00015035401,0.00003024293,0.0016904748,0.00012659265,0.000019994788,0.00014265702,0.00006557001,0.0010226296,0.9770633,0.0028237377,0.0010501388,0.015814204],"study_design_scores_gemma":[0.000047938345,0.000692188,0.010936886,0.000020493659,0.0000508848,0.00066798547,0.00013338793,0.008366753,0.96362954,0.0005091608,0.014919406,0.00002543392],"about_ca_topic_score_codex":0.00081652286,"about_ca_topic_score_gemma":0.0020610716,"teacher_disagreement_score":0.0030616259,"about_ca_system_score_codex":0.0003531934,"about_ca_system_score_gemma":0.00018430893,"threshold_uncertainty_score":0.010242164},"labels":[],"label_agreement":null},{"id":"W2136550367","doi":"10.1109/jdt.2005.858934","title":"A Fast Settling Current Driver Based on the CCII for AMOLED Displays","year":2005,"lang":"en","type":"article","venue":"Journal of Display Technology","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":21,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"AMOLED; Materials science; Current (fluid); OLED; Active matrix; Optoelectronics; Settling time; Amorphous solid; Electrical engineering; Nanotechnology; Engineering; Chemistry; Thin-film transistor","score_opus":0.00864194929971719,"score_gpt":0.22812652371248376,"score_spread":0.2194845744127666,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2136550367","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.13740794,0.0032421215,0.814388,0.00094347063,0.0017737411,0.0011500147,0.00044877702,0.019277956,0.021368006],"genre_scores_gemma":[0.6767008,0.0009781065,0.29059383,0.0006995348,0.00045017124,0.00058736146,0.00036637465,0.0012542553,0.028369652],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9992048,0.000046558176,0.000049858205,0.00013763706,0.00049013284,0.000070909446],"domain_scores_gemma":[0.99783856,0.00052476855,0.00025336034,0.00024241266,0.0009449786,0.00019599577],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0005274211,0.00064014766,0.00042520996,0.0007221719,0.0005867869,0.0009927262,0.0028220774,0.0010117125,0.0049944445],"category_scores_gemma":[0.0018234095,0.00040520297,0.00027756693,0.0004347917,0.00048494543,0.001512764,0.000635319,0.0012454339,0.0017564538],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00026832757,0.00009472837,0.001004411,0.00022155959,0.000023912602,0.00029172326,0.00031717052,0.00041352693,0.897971,0.0060237367,0.00561552,0.08775438],"study_design_scores_gemma":[0.000043685577,0.0009686049,0.0021098107,0.00003919417,0.000051225124,0.0019174592,0.00006216705,0.020015161,0.8869702,0.0006579328,0.08704809,0.0001164751],"about_ca_topic_score_codex":0.00085286895,"about_ca_topic_score_gemma":0.0014348857,"teacher_disagreement_score":0.0049944445,"about_ca_system_score_codex":0.00090924307,"about_ca_system_score_gemma":0.0008779487,"threshold_uncertainty_score":0.016708136},"labels":[],"label_agreement":null},{"id":"W2136639616","doi":"10.1109/wcpec.2006.279352","title":"A Novel Si-Based Heterojunction Solar Cell without Transparent Conductive Oxide","year":2006,"lang":"en","type":"article","venue":"","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Photocurrent; Materials science; Heterojunction; Solar cell; Optoelectronics; Silicon; Nanotechnology","score_opus":0.017732678837693496,"score_gpt":0.19684340817495277,"score_spread":0.17911072933725927,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2136639616","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9774007,0.001536114,0.012450898,0.000118760734,0.00010534349,0.00005006916,0.0005402923,0.00041085202,0.007386945],"genre_scores_gemma":[0.969099,0.0009280844,0.023172976,0.00007355183,0.000031759086,0.000039066657,0.000593214,0.0000249221,0.0060374965],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999423,0.0000015782222,0.0000029687776,0.00002235624,0.000023554823,0.000007225617],"domain_scores_gemma":[0.9999635,0.0000043733576,0.0000054022407,0.0000058529804,0.000012739419,0.000008098918],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000039538885,0.00012386282,0.0002707955,0.00007818458,0.0001687726,0.00028002696,0.0006485522,0.00029797864,0.0007188421],"category_scores_gemma":[0.00004684295,0.000117489544,0.00017859558,0.00014848198,0.000097033386,0.0003313955,0.00012655588,0.0002281466,0.00035833174],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000011406768,0.000009844282,0.00012714537,0.000026902264,0.0000066228436,0.00008411204,0.00000880788,0.00017043146,0.9973544,0.00016148936,0.00009853155,0.0019403558],"study_design_scores_gemma":[0.000020081497,0.00025269008,0.004470357,0.0000061515375,0.000052350333,0.00072319224,0.000020915437,0.009297115,0.97941375,0.0001127211,0.005618378,0.000012449614],"about_ca_topic_score_codex":0.0011922983,"about_ca_topic_score_gemma":0.0037989286,"teacher_disagreement_score":0.0011922983,"about_ca_system_score_codex":0.00023412553,"about_ca_system_score_gemma":0.0002128841,"threshold_uncertainty_score":0.0024047494},"labels":[],"label_agreement":null},{"id":"W2138003747","doi":"10.1109/newcas.2005.1496757","title":"A High-Speed Driver for Current-Programmed-Active-Matrix OLED Displays","year":2005,"lang":"en","type":"article","venue":"","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":4,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"AMOLED; Active matrix; OLED; CMOS; Current (fluid); Thin-film transistor; Electronic circuit; Electrical engineering; Transistor; Computer science; Settling time; Electronic engineering; Diode; Voltage; Current source; Materials science; Optoelectronics; Engineering","score_opus":0.012515461563496338,"score_gpt":0.24984367191424642,"score_spread":0.23732821035075008,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2138003747","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.4551945,0.0014229504,0.53112155,0.00040419598,0.00021378857,0.00020286141,0.00015118299,0.0032027045,0.008086199],"genre_scores_gemma":[0.89992833,0.00035066405,0.093433134,0.000100982674,0.00007649553,0.000050433275,0.00007799363,0.00011561942,0.0058663967],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99992573,0.000006916878,0.0000027538194,0.000015275387,0.000039757564,0.00000952544],"domain_scores_gemma":[0.99986565,0.00004620622,0.000017927232,0.000013998287,0.00004282924,0.00001348497],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00012858782,0.00022656373,0.00013242783,0.00012923083,0.00017948124,0.00029538656,0.00070748996,0.00027188618,0.0013595808],"category_scores_gemma":[0.00023291344,0.000161398,0.00012543723,0.00007954267,0.0001027487,0.00047820585,0.00016846968,0.00029440704,0.00035424565],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000051484843,0.00003127393,0.00026021904,0.000052273972,0.000006344008,0.00007601206,0.000056388548,0.0005370121,0.9718978,0.0014659668,0.00039110103,0.02517417],"study_design_scores_gemma":[0.000043423326,0.0004692399,0.0012227141,0.00000822362,0.000025065166,0.0005197446,0.000024079134,0.036939576,0.94315636,0.0003687735,0.017203044,0.000019854539],"about_ca_topic_score_codex":0.00022294569,"about_ca_topic_score_gemma":0.0006583372,"teacher_disagreement_score":0.0013595808,"about_ca_system_score_codex":0.00025926848,"about_ca_system_score_gemma":0.00019234282,"threshold_uncertainty_score":0.0045482516},"labels":[],"label_agreement":null},{"id":"W2138557710","doi":"10.1139/cjp-2013-0640","title":"p- and n-type microcrystalline silicon oxide (μc-SiO<sub><i>x</i></sub>:H) for applications in thin film silicon tandem solar cells","year":2014,"lang":"en","type":"article","venue":"Canadian Journal of Physics","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":29,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":false,"route_ca_venue":true,"route_about_ca":false,"ca_institutions":"","funders":"Bundesministerium für Umwelt, Naturschutz, nukleare Sicherheit und Verbraucherschutz","keywords":"Tandem; Silicon; Microcrystalline silicon; Microcrystalline; Crystallinity; Thin film; Oxide; Band gap; Crystalline silicon; Solar cell; Optoelectronics; Analytical Chemistry (journal); Chemical engineering; Physics; Materials science; Nanotechnology; Crystallography; Composite material; Amorphous silicon; Chemistry","score_opus":0.007245441836763291,"score_gpt":0.1818585148874496,"score_spread":0.17461307305068632,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2138557710","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.98865265,0.0044046342,0.0045179045,0.00007870912,0.00003374545,0.00003101255,0.000080887476,0.00006344923,0.0021371068],"genre_scores_gemma":[0.99015605,0.0014316173,0.0069309976,0.00002571792,0.000012167903,0.000010268236,0.00006395391,0.000010015499,0.0013593243],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999502,0.0000028736592,0.000002563047,0.000010108762,0.0000243078,0.000009860421],"domain_scores_gemma":[0.99994373,0.000010014461,0.000013287682,0.0000053121416,0.000014850337,0.000012763756],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00009637378,0.00023974925,0.0001560877,0.000099004494,0.00015611896,0.00017107901,0.0003579239,0.00022239896,0.0004936902],"category_scores_gemma":[0.00008109452,0.00010685811,0.00014110398,0.00013758548,0.00017616838,0.00022479885,0.00016341577,0.00020077411,0.00017902405],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000025961624,0.000009673572,0.00032603426,0.000034145476,0.0000050204217,0.000042353327,0.00000882835,0.00010695478,0.996323,0.000042113963,0.000033187785,0.0030427424],"study_design_scores_gemma":[0.00000329509,0.00014037787,0.00098891,0.0000016989693,0.000012807608,0.000116042545,0.000013253315,0.00043508818,0.99737453,0.000014474275,0.00089797727,0.0000015132246],"about_ca_topic_score_codex":0.0006540259,"about_ca_topic_score_gemma":0.0021954963,"teacher_disagreement_score":0.0006540259,"about_ca_system_score_codex":0.00017442156,"about_ca_system_score_gemma":0.00018849203,"threshold_uncertainty_score":0.0016515255},"labels":[],"label_agreement":null},{"id":"W2138663256","doi":"10.1139/cjp-2013-0622","title":"Photocurrent analysis of In–Ga–Zn–O (IGZO) film","year":2014,"lang":"en","type":"article","venue":"Canadian Journal of Physics","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":4,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":false,"route_ca_venue":true,"route_about_ca":false,"ca_institutions":"","funders":"","keywords":"Photoexcitation; Physics; Activation energy; Metastability; Photoconductivity; Relaxation (psychology); Photocurrent; Atomic physics; Exponent; Recombination; Energy (signal processing); Energy distribution; Molecular physics; Optoelectronics; Excited state; Chemistry; Physical chemistry; Quantum mechanics","score_opus":0.009589018165856202,"score_gpt":0.1915116797620361,"score_spread":0.1819226615961799,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2138663256","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9979361,0.00017955329,0.0010231121,0.000027577724,0.000006809061,0.000006661664,0.00016494658,0.000037946033,0.0006173239],"genre_scores_gemma":[0.99849665,0.00014432009,0.00063544157,0.00001111,0.0000025046695,0.00000504863,0.00008572319,0.0000065134113,0.0006125957],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99995315,0.0000024113565,0.000002209879,0.000012844052,0.000016568327,0.000012750651],"domain_scores_gemma":[0.99993587,0.000018012312,0.000016300632,0.0000044849617,0.000019549458,0.000005778434],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000070350536,0.00015606046,0.00016545483,0.00019843057,0.00010505775,0.00016477027,0.00022008974,0.00020058946,0.000936108],"category_scores_gemma":[0.00014738987,0.00008258232,0.00015444346,0.00022865618,0.00013289106,0.00016641554,0.00006480988,0.00018063617,0.00009324955],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00003370761,0.0000066637563,0.0004672554,0.000033624612,0.0000042019205,0.00006964823,0.000032842665,0.00015886483,0.99833614,0.0000255481,0.000018269186,0.00081323244],"study_design_scores_gemma":[0.000010987887,0.00014673616,0.033941377,0.000012302354,0.00003239848,0.0001539324,0.00010520679,0.00706484,0.9578933,0.00006142314,0.00056862214,0.0000088360575],"about_ca_topic_score_codex":0.0027951687,"about_ca_topic_score_gemma":0.002978405,"teacher_disagreement_score":0.0027951687,"about_ca_system_score_codex":0.0003095132,"about_ca_system_score_gemma":0.00007336711,"threshold_uncertainty_score":0.0055577755},"labels":[],"label_agreement":null},{"id":"W2138788388","doi":"10.1557/proc-0989-a22-03","title":"Structural Analysis of Nanocrystalline Silicon Prepared by Hot-wire Chemical Vapor Deposition on Polymer Substrates","year":2007,"lang":"en","type":"article","venue":"MRS Proceedings","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Simon Fraser University","funders":"British Columbia Knowledge Development Fund; Natural Sciences and Engineering Research Council of Canada","keywords":"Materials science; Silane; Nanocrystalline material; Chemical vapor deposition; Nanocrystalline silicon; Crystallinity; Crystallite; Raman spectroscopy; Polycrystalline silicon; Conductivity; Silicon; Analytical Chemistry (journal); Chemical engineering; Amorphous solid; Substrate (aquarium); Plasma-enhanced chemical vapor deposition; Layer (electronics); Amorphous silicon; Composite material; Crystallography; Nanotechnology; Metallurgy; Optics; Crystalline silicon; Organic chemistry; Chemistry","score_opus":0.006280858235701631,"score_gpt":0.20663717202761994,"score_spread":0.20035631379191832,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2138788388","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99805355,0.00013275175,0.00044747547,0.00002003048,0.0000067878295,0.000004371503,0.0001754974,0.000016668968,0.0011429155],"genre_scores_gemma":[0.99834716,0.00008907088,0.0005833682,0.000007223819,0.0000024404524,0.000005660407,0.00024897422,0.000010814813,0.00070520164],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999367,0.0000026088571,0.0000020549771,0.000014780125,0.000027363949,0.000016509663],"domain_scores_gemma":[0.9998801,0.000033697208,0.000029149713,0.000014393594,0.000029482802,0.000013177266],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00005723975,0.00011361618,0.00016659813,0.00019999879,0.0002135161,0.00019682138,0.00024322266,0.0002336989,0.0017615318],"category_scores_gemma":[0.00019742845,0.00016492071,0.00013568772,0.00024448792,0.00019336944,0.00014646661,0.000076176104,0.00023936668,0.00016910686],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00007430184,0.000010837398,0.00046622092,0.000033626508,0.0000071999425,0.00005976427,0.000031191543,0.00038883367,0.9979202,0.00010368278,0.00006584881,0.0008381155],"study_design_scores_gemma":[0.0000148612735,0.00018904913,0.015127739,0.000004468368,0.000014110214,0.00008460196,0.00007697977,0.0037163058,0.98011404,0.00003529187,0.0006167583,0.000005728663],"about_ca_topic_score_codex":0.0023824514,"about_ca_topic_score_gemma":0.004168336,"teacher_disagreement_score":0.0023824514,"about_ca_system_score_codex":0.00034834116,"about_ca_system_score_gemma":0.00023560977,"threshold_uncertainty_score":0.005892873},"labels":[],"label_agreement":null},{"id":"W2139240469","doi":"10.1109/led.2009.2036452","title":"Silicon X-Ray Detector With Integrated Thin-Film Transistor for Biomedical Applications","year":2010,"lang":"en","type":"article","venue":"IEEE Electron Device Letters","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":8,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Photodiode; Thin-film transistor; Optoelectronics; Silicon; Detector; Transistor; Materials science; X-ray detector; Electrical engineering; Physics; Optics; Nanotechnology; Engineering; Voltage","score_opus":0.005274924728868853,"score_gpt":0.20341371278112116,"score_spread":0.19813878805225232,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2139240469","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.2647523,0.017421853,0.6638611,0.0023223287,0.0018731962,0.00035489298,0.0037469107,0.010147279,0.03552016],"genre_scores_gemma":[0.47721443,0.004576152,0.4819627,0.0010006989,0.00044687904,0.00017432305,0.0025409688,0.00027636535,0.031807464],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998265,0.000017554517,0.000010903799,0.000045962955,0.00008770122,0.00001144807],"domain_scores_gemma":[0.999843,0.000052105872,0.000020905503,0.000015040073,0.00005388025,0.000015138358],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00020439013,0.00033384672,0.000353016,0.00028818107,0.00017885104,0.00045776126,0.00081649993,0.00068004156,0.0046121418],"category_scores_gemma":[0.00026939798,0.00026733827,0.00032100783,0.00033130895,0.00017150873,0.00052517944,0.00024026755,0.00036585674,0.0015358755],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0001233175,0.000022298425,0.00043541135,0.00018485491,0.000039471626,0.00022503674,0.000019137664,0.00021190426,0.97982943,0.0012888476,0.004830325,0.012789972],"study_design_scores_gemma":[0.000065305256,0.0004113626,0.0024560245,0.000035588226,0.00011599717,0.0020403904,0.00003432921,0.020491477,0.9373229,0.0004444252,0.036546275,0.000035963425],"about_ca_topic_score_codex":0.00038455744,"about_ca_topic_score_gemma":0.0012090016,"teacher_disagreement_score":0.0046121418,"about_ca_system_score_codex":0.00050774374,"about_ca_system_score_gemma":0.00035029248,"threshold_uncertainty_score":0.015429199},"labels":[],"label_agreement":null},{"id":"W2139282489","doi":"10.1889/1.2012647","title":"Pixel circuits and drive schemes for glass and elastic AMOLED displays","year":2005,"lang":"en","type":"article","venue":"Journal of the Society for Information Display","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":8,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"IGNIS Innovation (Canada)","funders":"","keywords":"Citation; Computer science; AMOLED; Computer graphics (images); Art history; Information retrieval; World Wide Web; Physics; Art; Quantum mechanics","score_opus":0.005363266779669316,"score_gpt":0.20062387435374512,"score_spread":0.19526060757407582,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2139282489","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.67104656,0.003963296,0.26002187,0.0017471168,0.00065892533,0.00048268828,0.0005230021,0.0022670918,0.059289515],"genre_scores_gemma":[0.93818223,0.000451989,0.05422896,0.00020019455,0.00007347797,0.000076695396,0.000084539635,0.00004775014,0.006654189],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99989283,0.000012670343,0.00000829691,0.000022865746,0.00004480539,0.000018497423],"domain_scores_gemma":[0.99990785,0.000021636855,0.000016002381,0.000016679118,0.000028367971,0.000009522254],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00012230595,0.00015624137,0.00011335353,0.00022434129,0.00033223667,0.00048624031,0.00071664207,0.00039557822,0.004266439],"category_scores_gemma":[0.00019993626,0.00014054282,0.00014238556,0.00016335875,0.00022342658,0.00071253633,0.00028097394,0.00029109573,0.0006093703],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00044111922,0.0001210339,0.0010309942,0.00014557074,0.00003752475,0.00022441856,0.0001650335,0.0021634558,0.8902229,0.044249196,0.0041094213,0.057089318],"study_design_scores_gemma":[0.00014765785,0.0009836805,0.0036613313,0.000047539583,0.000069190006,0.0009534794,0.000077498065,0.08022276,0.8424822,0.00992068,0.061376516,0.000057520916],"about_ca_topic_score_codex":0.000291337,"about_ca_topic_score_gemma":0.000552609,"teacher_disagreement_score":0.004266439,"about_ca_system_score_codex":0.00054856756,"about_ca_system_score_gemma":0.00013016803,"threshold_uncertainty_score":0.01427269},"labels":[],"label_agreement":null},{"id":"W2139283477","doi":"10.1149/1.3572276","title":"Impact of Silicon Nitride Gate Dielectric Composition on the Stability of Low Temperature Nanocrystalline Silicon Thin Film Transistors","year":2011,"lang":"en","type":"article","venue":"ECS Transactions","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"IGNIS Innovation (Canada); University of Waterloo","funders":"Natural Sciences and Engineering Research Council of Canada; Royal Society","keywords":"Materials science; Thin-film transistor; Gate dielectric; Silicon nitride; Optoelectronics; Dielectric; Nanocrystalline silicon; Nanocrystalline material; Amorphous solid; Transistor; Nitride; Silicon; Amorphous silicon; Threshold voltage; High-κ dielectric; Electrical engineering; Nanotechnology; Voltage; Crystalline silicon; Crystallography; Chemistry","score_opus":0.015206936060358422,"score_gpt":0.2061408087236959,"score_spread":0.19093387266333747,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2139283477","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99916995,0.0003486396,0.00019663929,0.000027286307,0.000007876658,0.0000027615783,0.00006254296,0.000008217664,0.00017616633],"genre_scores_gemma":[0.99945706,0.00015661154,0.00018911739,0.0000105459885,0.00000309381,0.0000026984433,0.0000541428,0.0000064228784,0.00012016953],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998196,0.000019751005,0.000017161261,0.000045852925,0.00005696837,0.000040676317],"domain_scores_gemma":[0.99959797,0.00015945203,0.000082030434,0.00003024943,0.00009061203,0.000039817183],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00015176449,0.00020940257,0.0002745816,0.00012307506,0.0002394662,0.00036930997,0.00016965193,0.00024562486,0.00073429575],"category_scores_gemma":[0.0005872846,0.00012934956,0.00013858022,0.00013477026,0.00025564397,0.00026127102,0.00014394685,0.00026992784,0.00011594986],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00018563528,0.000010258749,0.00082676386,0.000024910098,0.000017924625,0.00008195906,0.00004011831,0.00025393206,0.9975764,0.000019628083,0.000017932833,0.0009445646],"study_design_scores_gemma":[0.0000062480776,0.00022981406,0.0034945547,0.000003338205,0.000021999864,0.00008139077,0.000049691203,0.0012450038,0.994662,0.000018674033,0.00018269663,0.000004451439],"about_ca_topic_score_codex":0.0014079369,"about_ca_topic_score_gemma":0.0020619212,"teacher_disagreement_score":0.0014079369,"about_ca_system_score_codex":0.0002747623,"about_ca_system_score_gemma":0.00014297002,"threshold_uncertainty_score":0.0027994514},"labels":[],"label_agreement":null},{"id":"W2141101136","doi":"10.1109/16.877171","title":"Transduction principles of a-Si:H Schottky diode X-ray image sensors","year":2000,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":9,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Schottky diode; Materials science; X-ray detector; Detector; Sensitivity (control systems); Optoelectronics; Image sensor; Diode; Absorption (acoustics); Schottky barrier; Fabrication; X-ray; Optics; Physics; Electronic engineering; Engineering","score_opus":0.009286750410698147,"score_gpt":0.21220137923702848,"score_spread":0.20291462882633032,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2141101136","genre_codex":"empirical","genre_gemma":"methods","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"methods","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.5936584,0.0032858828,0.3893817,0.00068358425,0.00013411023,0.00041937814,0.00041190628,0.0012153959,0.010809631],"genre_scores_gemma":[0.9353966,0.0012576486,0.057664033,0.00016713167,0.000030082823,0.00015775763,0.00008105502,0.000035443292,0.005210157],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998418,0.000015523014,0.000010013363,0.00004047994,0.00007344411,0.000018723007],"domain_scores_gemma":[0.9999343,0.00003254612,0.000008254249,0.0000044084964,0.00001420764,0.0000062877893],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0001995344,0.0002513037,0.0002269503,0.00021334374,0.00019902745,0.0004664133,0.000508589,0.0005059902,0.0009429672],"category_scores_gemma":[0.00017043068,0.00029316734,0.00020126249,0.00008937805,0.0004896008,0.00045365441,0.00018946973,0.0003101131,0.00047270546],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000051455805,0.000023627166,0.00031923305,0.00012230003,0.000011805109,0.000115998366,0.000097509714,0.0012040309,0.98738223,0.004805444,0.00018365873,0.005682761],"study_design_scores_gemma":[0.000023917799,0.00032836912,0.0017229563,0.000016882574,0.000014140951,0.00059769873,0.0000676922,0.028667139,0.95945233,0.003575686,0.0055024973,0.00003065745],"about_ca_topic_score_codex":0.00022368152,"about_ca_topic_score_gemma":0.00031221283,"teacher_disagreement_score":0.0009429672,"about_ca_system_score_codex":0.0002961016,"about_ca_system_score_gemma":0.00023239505,"threshold_uncertainty_score":0.0031545758},"labels":[],"label_agreement":null},{"id":"W2141610287","doi":"10.1109/jdt.2006.878768","title":"Leakage and Charge Injection Optimization in a-Si AMOLED Displays","year":2006,"lang":"en","type":"article","venue":"Journal of Display Technology","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":7,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"AMOLED; Thin-film transistor; Transistor; Leakage (economics); Electrical engineering; OLED; Optoelectronics; Voltage; Capacitor; Materials science; Identifier; Active matrix; Computer science; Engineering; Nanotechnology; Computer network","score_opus":0.0028796278018704065,"score_gpt":0.18125052397908947,"score_spread":0.17837089617721907,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2141610287","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.98356485,0.0010090554,0.013722219,0.00011689101,0.000019666302,0.000014413445,0.000065100234,0.0003216553,0.0011661694],"genre_scores_gemma":[0.99370354,0.00024494773,0.005217531,0.00004491993,0.000010407284,0.000008924135,0.000037919846,0.000050316237,0.0006814753],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9997217,0.00003475076,0.000020577463,0.000057893772,0.00010432444,0.00006078126],"domain_scores_gemma":[0.99955505,0.00016660098,0.00013330187,0.000032620923,0.00009013705,0.000022301998],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0002694247,0.00030977651,0.0002598104,0.00029393192,0.00026398504,0.00064037734,0.0006070304,0.00039695704,0.00055914995],"category_scores_gemma":[0.00063167315,0.00016416807,0.00028233486,0.0003742128,0.00024230029,0.00066396495,0.00031659775,0.00022663524,0.00017243536],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00031203285,0.000088345,0.0022687877,0.00012805937,0.000038981445,0.00024009576,0.00013429328,0.008941707,0.975836,0.0005881026,0.00016698061,0.011256674],"study_design_scores_gemma":[0.000019727606,0.00046445843,0.0021706063,0.000011283886,0.000037435384,0.00023405932,0.00004446664,0.038903322,0.9566804,0.000216205,0.001202496,0.000015539645],"about_ca_topic_score_codex":0.00060297275,"about_ca_topic_score_gemma":0.0007737741,"teacher_disagreement_score":0.00075003767,"about_ca_system_score_codex":0.00075003767,"about_ca_system_score_gemma":0.00023666077,"threshold_uncertainty_score":0.005441904},"labels":[],"label_agreement":null},{"id":"W2142775931","doi":"10.1116/1.1705583","title":"Analysis and characterization of self-compensating current programmed a-Si:H active matrix organic light-emitting diode pixel circuits","year":2004,"lang":"en","type":"article","venue":"Journal of Vacuum Science & Technology A Vacuum Surfaces and Films","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":7,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Natural Sciences and Engineering Research Council of Canada; University of Waterloo","keywords":"AMOLED; Active matrix; Thin-film transistor; OLED; Electronic circuit; Materials science; Optoelectronics; Diode; Transistor; Compensation (psychology); Amorphous silicon; Threshold voltage; Current mirror; Electrical engineering; Electronic engineering; Voltage; Silicon; Engineering; Nanotechnology; Crystalline silicon","score_opus":0.006305569844495318,"score_gpt":0.2260762040881589,"score_spread":0.21977063424366358,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2142775931","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9889275,0.00020188146,0.009671725,0.000017212666,0.0000047346302,0.000016760365,0.00012748007,0.00010694056,0.00092573225],"genre_scores_gemma":[0.99637055,0.0000707307,0.0027992309,0.0000062174167,0.00000307229,0.000009641623,0.0000833742,0.000008507688,0.0006486316],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998697,0.00000908257,0.00000593493,0.00003735477,0.000059935697,0.000017902752],"domain_scores_gemma":[0.9997236,0.000115956005,0.000049533668,0.000026679292,0.000071353454,0.000012785796],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00009766025,0.0001256659,0.00012895867,0.0002866026,0.00011813731,0.00028194775,0.00030404548,0.000268741,0.00076528755],"category_scores_gemma":[0.00040499115,0.00007302704,0.000092696246,0.00022277844,0.00018111734,0.00022489468,0.00008252997,0.00012825096,0.00011961774],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000055716842,0.00001551416,0.0011005938,0.000027773944,0.00000673944,0.000058049285,0.000038188486,0.0008355961,0.9921366,0.00017173031,0.0000332591,0.005520273],"study_design_scores_gemma":[0.0000056067433,0.00024900804,0.007892316,0.0000024031312,0.000011158969,0.00018544088,0.000027690185,0.016818997,0.9741455,0.00006993217,0.0005866279,0.0000053633303],"about_ca_topic_score_codex":0.0005718261,"about_ca_topic_score_gemma":0.0005692597,"teacher_disagreement_score":0.00076528755,"about_ca_system_score_codex":0.0002321612,"about_ca_system_score_gemma":0.00012266019,"threshold_uncertainty_score":0.0025601387},"labels":[],"label_agreement":null},{"id":"W2143701268","doi":"10.1002/pssc.200982796","title":"The effect of aging on the dark conductivity and 1/<i>f</i> noise in hydrogenated microcrystalline silicon thin films","year":2010,"lang":"en","type":"article","venue":"Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":4,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Saskatchewan","funders":"Natural Sciences and Engineering Research Council of Canada; Bundesministerium für Bildung und Forschung","keywords":"Conductivity; Annealing (glass); Materials science; Activation energy; Electrical resistivity and conductivity; Analytical Chemistry (journal); Silicon; Microcrystalline; Condensed matter physics; Composite material; Chemistry; Optoelectronics; Physics; Crystallography; Physical chemistry","score_opus":0.02249068014656261,"score_gpt":0.30095360556690137,"score_spread":0.2784629254203388,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2143701268","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9985965,0.0005653539,0.00042612402,0.000018126866,0.000008440724,0.0000034967597,0.00013661277,0.000017787877,0.00022759168],"genre_scores_gemma":[0.99892336,0.00023915205,0.00041608664,0.000008560616,0.000003357716,0.000004469871,0.00009938736,0.000007205689,0.00029842055],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998622,0.000016637085,0.000010273983,0.000039293864,0.000046459336,0.000025144955],"domain_scores_gemma":[0.9997336,0.000090788344,0.000071652496,0.000024783067,0.000062340514,0.000016839896],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00022924581,0.00023975589,0.00020692559,0.00021989047,0.00012700306,0.0002251236,0.00025139595,0.00023068173,0.00051802094],"category_scores_gemma":[0.00048026218,0.00016598005,0.00013434429,0.00019614036,0.00029276594,0.00021512019,0.00012644153,0.00021030234,0.00010085008],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00010731663,0.000010217188,0.0011443069,0.00004354503,0.000018377052,0.00014957624,0.00006907453,0.0002984172,0.9962864,0.000037100403,0.000036095622,0.0017994964],"study_design_scores_gemma":[0.0000032905994,0.00014025129,0.009492159,0.000004401931,0.000016606187,0.000117147465,0.00002956632,0.0010065538,0.98889685,0.000017389732,0.00026990686,0.0000059314843],"about_ca_topic_score_codex":0.001517372,"about_ca_topic_score_gemma":0.0012013024,"teacher_disagreement_score":0.001517372,"about_ca_system_score_codex":0.00034207405,"about_ca_system_score_gemma":0.00009175664,"threshold_uncertainty_score":0.003017068},"labels":[],"label_agreement":null},{"id":"W2143848687","doi":"10.1109/ted.2005.859635","title":"Accelerated Stress Testing of a-Si:H Pixel Circuits for AMOLED Displays","year":2005,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":29,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"University of Waterloo","keywords":"AMOLED; Backplane; Active matrix; OLED; Reliability (semiconductor); Thin-film transistor; Materials science; Electronic circuit; Transistor; Stress (linguistics); Diode; Optoelectronics; Pixel; Electronic engineering; Computer science; Electrical engineering; Engineering; Voltage; Computer hardware; Nanotechnology; Artificial intelligence","score_opus":0.02535717299978646,"score_gpt":0.24531495127131142,"score_spread":0.21995777827152496,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2143848687","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.79582804,0.0008471952,0.2009019,0.00007524981,0.000022393624,0.00013929648,0.00015622993,0.00041643795,0.0016132744],"genre_scores_gemma":[0.9442861,0.00029773367,0.054657843,0.000020077148,0.000017056684,0.00006334981,0.000066067034,0.00002398991,0.0005678054],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99981195,0.000036251553,0.000011807707,0.00002942703,0.00009454668,0.000016066904],"domain_scores_gemma":[0.9996697,0.0001105877,0.00007281807,0.000046077133,0.00008527457,0.000015520298],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00023445014,0.00029642077,0.00023181988,0.00035893722,0.00018906045,0.00024782194,0.00030981522,0.00036181576,0.00046966725],"category_scores_gemma":[0.0005872082,0.00011595063,0.00023266952,0.00019057479,0.000289739,0.0003491141,0.00020281092,0.00024459307,0.00010634355],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00007694228,0.000060286693,0.0052447137,0.0000809095,0.000016570162,0.00013336593,0.000102552476,0.009095453,0.95005614,0.0010953201,0.0002124736,0.03382535],"study_design_scores_gemma":[0.000026513591,0.001430681,0.026667658,0.00001821686,0.000022803693,0.00069351797,0.00007649745,0.18031861,0.7869486,0.0013531633,0.002403429,0.000040329316],"about_ca_topic_score_codex":0.00053925626,"about_ca_topic_score_gemma":0.0013646107,"teacher_disagreement_score":0.00053925626,"about_ca_system_score_codex":0.0003792788,"about_ca_system_score_gemma":0.0001986123,"threshold_uncertainty_score":0.0027518868},"labels":[],"label_agreement":null},{"id":"W2144839634","doi":"10.1109/ccece.2007.243","title":"Characterization of Low Temperature P-Type Hydrogenated Microcrystalline Silicon Thin Films Deposited by Plasma Enhanced Chemical Vapor Deposition","year":2007,"lang":"en","type":"article","venue":"","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":2,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Simon Fraser University","funders":"Simon Fraser University","keywords":"Plasma-enhanced chemical vapor deposition; Microcrystalline; Analytical Chemistry (journal); Chemical vapor deposition; Materials science; Thin film; Crystallite; Amorphous solid; Chemistry; Nanotechnology; Crystallography; Organic chemistry","score_opus":0.0029830668050655124,"score_gpt":0.17854348909342757,"score_spread":0.17556042228836205,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2144839634","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9942179,0.00054799876,0.0028765954,0.00004745968,0.000014589746,0.000016923756,0.00056319125,0.000072424955,0.0016428696],"genre_scores_gemma":[0.99110526,0.0006472389,0.0051669045,0.00002765333,0.000007398492,0.000029975527,0.0005758702,0.000035050893,0.0024045198],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99994457,0.000002545737,0.0000027193103,0.000015450434,0.000024289866,0.000010410094],"domain_scores_gemma":[0.9998679,0.000043620872,0.000021749524,0.000014202334,0.000042708565,0.000009819495],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00006489504,0.00015539685,0.00015781683,0.00014821872,0.00012587757,0.00021182798,0.00026041103,0.00026797727,0.0012491381],"category_scores_gemma":[0.00020704733,0.00015871384,0.00011169984,0.00022744159,0.0001433219,0.00015611672,0.000059317106,0.00021296775,0.00027518964],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000015905596,0.0000029365065,0.0002878784,0.000029131417,0.0000040674677,0.0000606331,0.000015102289,0.00006547341,0.99871814,0.000020209038,0.00004547394,0.0007350606],"study_design_scores_gemma":[0.0000038982275,0.00006884495,0.008790944,0.0000030366027,0.000008457514,0.00011042471,0.000026903259,0.00077101006,0.98933697,0.000009780862,0.0008662922,0.0000033949686],"about_ca_topic_score_codex":0.0013764604,"about_ca_topic_score_gemma":0.0022569946,"teacher_disagreement_score":0.0013764604,"about_ca_system_score_codex":0.00023536978,"about_ca_system_score_gemma":0.00013477103,"threshold_uncertainty_score":0.0041787624},"labels":[],"label_agreement":null},{"id":"W2145529988","doi":"10.1139/cjp-2013-0526","title":"The mean crystallite size within a hydrogenated nanocrystalline silicon based photovoltaic solar cell and its role in determining the corresponding crystalline volume fraction","year":2014,"lang":"en","type":"article","venue":"Canadian Journal of Physics","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":6,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":true,"route_about_ca":false,"ca_institutions":"University of British Columbia, Okanagan Campus; University of British Columbia","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Crystallite; Nanocrystalline material; Volume fraction; Scherrer equation; Raman spectroscopy; Solar cell; Diffraction; Nanocrystalline silicon; Volume (thermodynamics); Materials science; Analytical Chemistry (journal); Crystalline silicon; Physics; Optics; Nanotechnology; Thermodynamics; Composite material; Chemistry; Optoelectronics; Organic chemistry","score_opus":0.005751037467234066,"score_gpt":0.17346201915283596,"score_spread":0.1677109816856019,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2145529988","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99653554,0.00029736102,0.0021713597,0.000028344404,0.0000032718633,0.0000033829747,0.00009413437,0.000024888139,0.000841682],"genre_scores_gemma":[0.99897575,0.00012146423,0.00069251313,0.0000037972834,0.0000012814616,0.00000388717,0.000057672205,0.0000067135843,0.00013690651],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.999897,0.0000051287675,0.0000055303417,0.00003356205,0.000038593447,0.000020146363],"domain_scores_gemma":[0.999746,0.00013309118,0.00004499959,0.000016391718,0.000047100104,0.000012362267],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0001377811,0.00009449577,0.00027662117,0.00031299636,0.00024735194,0.0005390913,0.00034776097,0.0001756593,0.00064057304],"category_scores_gemma":[0.0004885687,0.00013582455,0.00014344878,0.00030783433,0.00028162778,0.00034462873,0.00017300568,0.00018542471,0.00009560554],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00012772893,0.000032514312,0.013237506,0.00006156179,0.000030144385,0.00020657059,0.00013420248,0.013716291,0.96261716,0.0009593882,0.00009167319,0.0087851845],"study_design_scores_gemma":[0.000007806286,0.00012135092,0.028095301,0.000007160753,0.00002766112,0.00020279165,0.00017040539,0.06457127,0.9056251,0.0006381759,0.0005115759,0.000021421874],"about_ca_topic_score_codex":0.0028501048,"about_ca_topic_score_gemma":0.0040493943,"teacher_disagreement_score":0.0028501048,"about_ca_system_score_codex":0.0004799558,"about_ca_system_score_gemma":0.00029889567,"threshold_uncertainty_score":0.005667031},"labels":[],"label_agreement":null},{"id":"W2145679300","doi":"10.1557/proc-0989-a04-04","title":"High Quality a-Ge:H Films and Devices Through Enhanced Plasma Chemistry","year":2007,"lang":"en","type":"article","venue":"MRS Proceedings","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":7,"is_retracted":false,"has_abstract":false,"route_ca_aff":false,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Materials science; High-resolution transmission electron microscopy; Plasma-enhanced chemical vapor deposition; Substrate (aquarium); Plasma; Optoelectronics; Layer (electronics); Electrode; Thin film; Analytical Chemistry (journal); Nanotechnology; Silicon; Transmission electron microscopy","score_opus":0.012150975345734704,"score_gpt":0.23460064424051424,"score_spread":0.22244966889477955,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2145679300","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9459895,0.0031658674,0.021387456,0.0010151854,0.000266402,0.0001273202,0.00029267272,0.00060308137,0.027152488],"genre_scores_gemma":[0.97337884,0.0011578801,0.015421098,0.00012784745,0.000058531437,0.00003703351,0.00013822089,0.00011198584,0.009568587],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99992347,0.000008462797,0.000002912162,0.000012985355,0.000034429417,0.000017732871],"domain_scores_gemma":[0.99994624,0.000015070056,0.000010407997,0.000007682189,0.0000105203835,0.000010161031],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00018668587,0.0002850012,0.00021564326,0.00021603776,0.00026663952,0.00069974945,0.00034938613,0.00043561042,0.0019739557],"category_scores_gemma":[0.00017686955,0.00025950785,0.00013925048,0.00015736498,0.00037941855,0.0007337679,0.0004327146,0.0004998809,0.0004879111],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0000916306,0.00002405092,0.00014865118,0.00010313178,0.000011816423,0.00012857682,0.00009335494,0.00025601816,0.9882409,0.0057724654,0.00095429993,0.004175043],"study_design_scores_gemma":[0.00006432046,0.00013183939,0.0008351417,0.000008195995,0.000008931557,0.00026210718,0.00006318494,0.0016993417,0.986784,0.0011997195,0.00892962,0.000013605796],"about_ca_topic_score_codex":0.0004526346,"about_ca_topic_score_gemma":0.0009166067,"teacher_disagreement_score":0.0019739557,"about_ca_system_score_codex":0.00028179164,"about_ca_system_score_gemma":0.00016973639,"threshold_uncertainty_score":0.006603539},"labels":[],"label_agreement":null},{"id":"W2146168125","doi":"10.1109/pvsc.2010.5615826","title":"Optimization of semi-transparent amorphous silicon solar cells for building integrated applications","year":2010,"lang":"en","type":"article","venue":"","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":5,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Open-circuit voltage; Materials science; Amorphous solid; Microcrystalline; Amorphous silicon; Optoelectronics; Short circuit; Solar cell; Silicon; Polymer solar cell; Layer (electronics); Photovoltaic system; Voltage; Crystalline silicon; Composite material; Electrical engineering; Chemistry; Crystallography; Engineering","score_opus":0.009721420545441728,"score_gpt":0.21583349999258736,"score_spread":0.20611207944714563,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2146168125","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.98870045,0.000866844,0.0069835754,0.000058949656,0.0000111503,0.000020541564,0.00015050595,0.000100810255,0.0031071727],"genre_scores_gemma":[0.99398106,0.00044271883,0.0045939274,0.000013936727,0.000004008376,0.000015211561,0.00011339554,0.000032769505,0.0008028577],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999298,0.0000072852126,0.0000040232803,0.0000129926475,0.00003456508,0.00001136076],"domain_scores_gemma":[0.9999269,0.00002880459,0.000018409724,0.0000056366616,0.000013381525,0.0000069265375],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00008039722,0.00028961693,0.00030654602,0.00013625313,0.00016140862,0.0005934377,0.000256421,0.00020428123,0.0012403233],"category_scores_gemma":[0.00020082084,0.00017930267,0.0001417594,0.00019160881,0.000099795856,0.00024078724,0.00014541291,0.00020645022,0.00032740197],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000054721433,0.000036187324,0.00058421516,0.00007209328,0.000013714426,0.0000449173,0.00001837354,0.010667193,0.9827323,0.00016330977,0.00008906119,0.0055239107],"study_design_scores_gemma":[0.000032352527,0.00046231505,0.0037416606,0.000010688243,0.000040733048,0.00012781293,0.000090706875,0.054212857,0.9387747,0.00020081025,0.0022907043,0.000014671967],"about_ca_topic_score_codex":0.00041582604,"about_ca_topic_score_gemma":0.0014846991,"teacher_disagreement_score":0.0012403233,"about_ca_system_score_codex":0.00022379351,"about_ca_system_score_gemma":0.00015154976,"threshold_uncertainty_score":0.004149258},"labels":[],"label_agreement":null},{"id":"W2146190744","doi":"10.1109/16.998589","title":"Modeling of the reverse characteristics of a-Si:H TFTs","year":2002,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":65,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Materials science; Thermal conduction; Ohmic contact; Leakage (economics); Thin-film transistor; Conductivity; Optoelectronics; Transistor; Dielectric; Silicon; Biasing; Voltage; Condensed matter physics; Electrical engineering; Nanotechnology; Chemistry; Composite material; Physics","score_opus":0.013614443104043143,"score_gpt":0.1944886949427255,"score_spread":0.18087425183868236,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2146190744","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.75357735,0.0012881912,0.23449132,0.00025752696,0.000051718467,0.00005889285,0.0006073853,0.001069071,0.008598624],"genre_scores_gemma":[0.9928069,0.00034161189,0.0049938885,0.000016854894,0.000012288198,0.00002005386,0.0001306807,0.000023821452,0.0016538488],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9999268,0.000009536176,0.0000037722261,0.000015024217,0.000033102126,0.000011672452],"domain_scores_gemma":[0.99986017,0.000059932554,0.000018325767,0.00001570715,0.000040908355,0.0000049262862],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000100343874,0.00029847136,0.0001719084,0.0001904195,0.00011626151,0.00025700743,0.00053055095,0.0005349312,0.00081497064],"category_scores_gemma":[0.00053149497,0.00011931745,0.0003315946,0.00016323559,0.00020415719,0.0004805541,0.00009585813,0.00017821946,0.00034821546],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00017823571,0.00003324936,0.0035012201,0.0001284788,0.000040892377,0.0004122338,0.00012101565,0.75261116,0.22103187,0.0026281185,0.0004947511,0.01881875],"study_design_scores_gemma":[0.00000767551,0.00010243963,0.0011261087,0.000004021175,0.000016119866,0.00014111305,0.000017922299,0.9646387,0.032102782,0.00063268666,0.0012038426,0.0000066037287],"about_ca_topic_score_codex":0.0026548998,"about_ca_topic_score_gemma":0.0017354072,"teacher_disagreement_score":0.0026548998,"about_ca_system_score_codex":0.00043278493,"about_ca_system_score_gemma":0.00021588766,"threshold_uncertainty_score":0.0052788854},"labels":[],"label_agreement":null},{"id":"W2147133519","doi":"10.1557/proc-814-i2.4/a3.4","title":"100-nm Channel Length a-Si:H Vertical Thin Film Transistors","year":2004,"lang":"en","type":"article","venue":"MRS Proceedings","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Materials science; Thin-film transistor; Optoelectronics; Transistor; Subthreshold slope; Amorphous silicon; Channel (broadcasting); Reactive-ion etching; Planar; Etching (microfabrication); Silicon; Engineering physics; Nanotechnology; Electrical engineering; Threshold voltage; Crystalline silicon; Voltage; Computer science; Layer (electronics)","score_opus":0.012083278744252511,"score_gpt":0.1966873837582007,"score_spread":0.18460410501394817,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2147133519","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.97241443,0.0019287895,0.004851361,0.00071320956,0.00045304192,0.000051201056,0.0012859283,0.00058437744,0.017717687],"genre_scores_gemma":[0.9851275,0.00070098136,0.0058234846,0.00012900023,0.00007648313,0.00004169756,0.00043477566,0.000046469017,0.007619578],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998963,0.000005630751,0.0000050025183,0.00002597745,0.00003997931,0.000027167385],"domain_scores_gemma":[0.99983,0.00004966349,0.00002296906,0.000016105594,0.000049191218,0.000031957818],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00010019701,0.00023606334,0.0002193724,0.00020476113,0.00038611182,0.0005489361,0.0006690861,0.00061881513,0.0025979637],"category_scores_gemma":[0.00025962837,0.00018976808,0.00012122381,0.00024232568,0.00024726326,0.0004889265,0.00024043646,0.0003651094,0.00064627716],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00012430531,0.000048393253,0.00034944835,0.00012317386,0.000019979072,0.00014328481,0.000056215264,0.00027562404,0.9916905,0.0010606572,0.0017942204,0.0043142415],"study_design_scores_gemma":[0.00007035061,0.00045571054,0.0040708245,0.000027478012,0.00004226251,0.00023873073,0.00019160192,0.0072239647,0.97607464,0.0007342695,0.010847915,0.000022251948],"about_ca_topic_score_codex":0.0019216969,"about_ca_topic_score_gemma":0.0074708723,"teacher_disagreement_score":0.0025979637,"about_ca_system_score_codex":0.00052666204,"about_ca_system_score_gemma":0.00032182198,"threshold_uncertainty_score":0.008691013},"labels":[],"label_agreement":null},{"id":"W2147366552","doi":"10.1109/jdt.2007.900914","title":"Single-Technology-Based Statistical Calibration for High-Performance Active-Matrix Organic LED Displays","year":2007,"lang":"en","type":"article","venue":"Journal of Display Technology","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":21,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Division of Materials Research; Canada Research Chairs","keywords":"AMOLED; Thin-film transistor; Active matrix; CMOS; OLED; Electronic circuit; Materials science; Threshold voltage; Compensation (psychology); Transistor; Brightness; Liquid-crystal display; Computer science; Optoelectronics; Electronic engineering; Electrical engineering; Voltage; Engineering; Optics; Nanotechnology; Physics","score_opus":0.006404670674384657,"score_gpt":0.23188859926237063,"score_spread":0.22548392858798597,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2147366552","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.50053823,0.0013228178,0.48683828,0.00035954997,0.00015150777,0.000112503,0.00031427393,0.0051226295,0.0052402574],"genre_scores_gemma":[0.93860674,0.0002034516,0.059778024,0.000052764357,0.0000312903,0.000027495027,0.00007641813,0.0000799753,0.0011438685],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9996836,0.00003908959,0.000013276704,0.00007306485,0.00017117962,0.000019837942],"domain_scores_gemma":[0.9994823,0.00017463873,0.00007956363,0.00007833212,0.00016601251,0.000019217507],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000357736,0.00020386929,0.00021549364,0.0003128949,0.00023880182,0.00047407774,0.0007333684,0.00023562506,0.001279873],"category_scores_gemma":[0.0010482376,0.00019693586,0.00014990814,0.00030052525,0.00019387752,0.00056924473,0.00029627696,0.0002847201,0.00034934218],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00012571213,0.000059139187,0.0019127787,0.000106069805,0.000019783056,0.000114608665,0.00005996655,0.007667995,0.91361904,0.0016213768,0.0008581775,0.07383532],"study_design_scores_gemma":[0.000017903683,0.00017885637,0.0027556159,0.000007028415,0.000016911275,0.00035825232,0.000019183373,0.08971533,0.90342456,0.000402869,0.0030849944,0.000018488416],"about_ca_topic_score_codex":0.00034809613,"about_ca_topic_score_gemma":0.00086686306,"teacher_disagreement_score":0.001279873,"about_ca_system_score_codex":0.0005193794,"about_ca_system_score_gemma":0.0003220878,"threshold_uncertainty_score":0.0042815804},"labels":[],"label_agreement":null},{"id":"W2147453163","doi":"10.1109/pvsc.2002.1190484","title":"Thermo-catalytic deposition of silicon nitride - a new method for excellent silicon surface passivation","year":2003,"lang":"en","type":"article","venue":"","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":2,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"","funders":"Institute of Gender and Health","keywords":"Passivation; Silicon nitride; Materials science; Silicon; Deposition (geology); Chemical vapor deposition; Chemical engineering; Optoelectronics; Analytical Chemistry (journal); Layer (electronics); Nanotechnology; Chemistry; Organic chemistry","score_opus":0.016707355078811627,"score_gpt":0.24778844267950215,"score_spread":0.23108108760069052,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2147453163","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9036199,0.019023862,0.065442786,0.00022492088,0.00024292049,0.00015478769,0.00026066435,0.000328241,0.010701991],"genre_scores_gemma":[0.95477694,0.0045826226,0.036189076,0.000053526055,0.00003395276,0.000051779534,0.00019592838,0.000060124854,0.004056145],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998134,0.00001425959,0.0000094804,0.000032208238,0.00011285931,0.000017771752],"domain_scores_gemma":[0.9998834,0.000029251678,0.000025346548,0.000024588915,0.000026281545,0.000011176549],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00020878951,0.00029834048,0.0003631794,0.00024915198,0.000129176,0.00029909235,0.00037122297,0.00032626124,0.00061904814],"category_scores_gemma":[0.00019382985,0.00028655503,0.00025725723,0.00013582829,0.00019985068,0.0002475487,0.00021126441,0.00046374113,0.00026271606],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000005500289,0.000003983254,0.00003769574,0.000044423337,0.0000044136837,0.00002404348,0.000007141244,0.000049454422,0.99840313,0.00010446602,0.000023376437,0.0012924318],"study_design_scores_gemma":[0.000002300544,0.000028051018,0.00028049643,0.0000027083106,0.0000047907506,0.00013852923,0.0000030986978,0.000539499,0.99779737,0.000015897553,0.0011849892,0.0000022753427],"about_ca_topic_score_codex":0.0002862708,"about_ca_topic_score_gemma":0.0007457948,"teacher_disagreement_score":0.00061904814,"about_ca_system_score_codex":0.00021237422,"about_ca_system_score_gemma":0.00018802515,"threshold_uncertainty_score":0.0020709634},"labels":[],"label_agreement":null},{"id":"W2147592928","doi":"10.1109/jdt.2006.885142","title":"A Stable Voltage-Programmed Pixel Circuit for a-Si:H AMOLED Displays","year":2006,"lang":"en","type":"article","venue":"Journal of Display Technology","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":21,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"AMOLED; Thin-film transistor; Materials science; OLED; Optoelectronics; Diode; Threshold voltage; Transistor; Pixel; Electronic circuit; Active matrix; Voltage; Electrical engineering; Computer science; Nanotechnology; Engineering; Artificial intelligence","score_opus":0.007929907709309281,"score_gpt":0.20653936274530357,"score_spread":0.19860945503599428,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2147592928","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.7230904,0.0020063117,0.26136526,0.00048625888,0.00043218088,0.0002612567,0.0007684497,0.0037589963,0.007830757],"genre_scores_gemma":[0.92717487,0.00031651877,0.06856865,0.00017475201,0.0000870696,0.000078319055,0.00018763787,0.00009087231,0.0033213],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998404,0.000011804315,0.00000939965,0.000045296503,0.00007513015,0.000017955746],"domain_scores_gemma":[0.9998791,0.00002823092,0.000023959705,0.000020143621,0.000034241282,0.000014379971],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00010148892,0.00015991056,0.00016475002,0.00015194013,0.00016192996,0.00034651993,0.0009798425,0.00040048716,0.001396586],"category_scores_gemma":[0.00023290189,0.00014445615,0.00012244633,0.00017709873,0.00017182005,0.00045458318,0.00020496878,0.00035712143,0.000449333],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00003342521,0.000020967836,0.00011035356,0.000034152017,0.000005842966,0.00005257652,0.000013517893,0.00012750174,0.9882819,0.00037990283,0.00037942035,0.010560292],"study_design_scores_gemma":[0.000016557262,0.0002268647,0.0010431352,0.00000289217,0.000010066824,0.0003268843,0.000006654716,0.0072309156,0.98573697,0.00009456324,0.005294695,0.000009822904],"about_ca_topic_score_codex":0.00023658203,"about_ca_topic_score_gemma":0.00039030923,"teacher_disagreement_score":0.001396586,"about_ca_system_score_codex":0.00030621476,"about_ca_system_score_gemma":0.00015294163,"threshold_uncertainty_score":0.00467211},"labels":[],"label_agreement":null},{"id":"W2147779038","doi":"10.1109/newcas.2006.250960","title":"Adaptive Estimation of Device Parameters for Pixel Calibration in Large Area Display Systems","year":2006,"lang":"en","type":"article","venue":"","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Pixel; Calibration; OLED; Thin-film transistor; Transconductance; Computer science; Projection (relational algebra); Transistor; Representation (politics); Materials science; Optoelectronics; Electronic engineering; Artificial intelligence; Electrical engineering; Engineering; Physics; Algorithm","score_opus":0.015193610024486959,"score_gpt":0.21184595339783063,"score_spread":0.19665234337334367,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2147779038","genre_codex":"methods","genre_gemma":"methods","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"methods","genre_consensus":"methods","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.13846587,0.00020597418,0.85931236,0.00007302826,0.000015160037,0.000028419707,0.000045395598,0.0010108702,0.0008429295],"genre_scores_gemma":[0.73138344,0.00013151183,0.26732436,0.000033316788,0.000015590118,0.000037585105,0.00007746504,0.000071533526,0.00092524977],"study_design_codex":"bench_or_experimental","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99984944,0.000041897394,0.000005149677,0.000030201485,0.00006461443,0.000008705173],"domain_scores_gemma":[0.999655,0.00015727272,0.000040270323,0.000054359723,0.000081502505,0.000011544507],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00022909569,0.00029298684,0.00018694879,0.00017791011,0.00017781429,0.00032430844,0.00036887085,0.00034425582,0.0010486116],"category_scores_gemma":[0.0012267914,0.00016747427,0.00012713054,0.0002083065,0.00016244726,0.00048749775,0.00026081008,0.0004472008,0.00026417413],"study_design_candidate":"simulation_or_modeling","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00029754275,0.00007406064,0.0037161503,0.00007157335,0.00005695831,0.00012742609,0.00015275723,0.04129552,0.7038675,0.002841406,0.0006579886,0.24684119],"study_design_scores_gemma":[0.000040065792,0.00021804002,0.008501706,0.000013068285,0.00003532865,0.00047378015,0.000045021712,0.5278024,0.4583587,0.0019026224,0.0025683173,0.00004092118],"about_ca_topic_score_codex":0.00033866093,"about_ca_topic_score_gemma":0.0006386927,"teacher_disagreement_score":0.0010486116,"about_ca_system_score_codex":0.0001631598,"about_ca_system_score_gemma":0.00019388048,"threshold_uncertainty_score":0.0035079718},"labels":[],"label_agreement":null},{"id":"W2149134195","doi":"10.1109/pvsc.2008.4922640","title":"High performance solar cells with silicon carbon nitride (SiCxNy) antireflection coatings deposited from polymeric solid source","year":2008,"lang":"en","type":"article","venue":"","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":2,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Institut National de la Recherche Scientifique","funders":"","keywords":"Coating; Materials science; Chemical engineering; Nuclear chemistry; Nanotechnology; Chemistry; Engineering","score_opus":0.005905670246459323,"score_gpt":0.16694478943981025,"score_spread":0.16103911919335093,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2149134195","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9936005,0.00047564425,0.001579198,0.00005976439,0.000031580148,0.00001571681,0.0002603085,0.00014348811,0.0038338904],"genre_scores_gemma":[0.9886798,0.00084602827,0.0032099825,0.000037885562,0.000013485499,0.000018785466,0.0005372726,0.000044207125,0.0066126487],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998759,0.0000071162845,0.0000065347863,0.000021129481,0.000059399415,0.000029888302],"domain_scores_gemma":[0.9999205,0.00001637186,0.00001273241,0.000009944829,0.000029836494,0.00001065004],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000101156074,0.00022581151,0.00027385086,0.00014204964,0.00018347678,0.00030699465,0.0003208224,0.00033127455,0.001406862],"category_scores_gemma":[0.00011440599,0.0001534867,0.00018563877,0.00025297253,0.00009043471,0.00022949795,0.0001686127,0.00032110055,0.000489518],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00007576114,0.000018466877,0.00020819566,0.000025907737,0.0000081449725,0.000048064212,0.000010685393,0.00018437745,0.9975897,0.00005429938,0.00014155719,0.0016348449],"study_design_scores_gemma":[0.000011356635,0.00011668609,0.0020812924,0.0000031916404,0.000009795028,0.000036969188,0.0000080970085,0.0012221533,0.9955605,0.000011812083,0.0009353833,0.000002621444],"about_ca_topic_score_codex":0.0011224273,"about_ca_topic_score_gemma":0.0034105335,"teacher_disagreement_score":0.001406862,"about_ca_system_score_codex":0.00027206537,"about_ca_system_score_gemma":0.00014962482,"threshold_uncertainty_score":0.0047063828},"labels":[],"label_agreement":null},{"id":"W2150875398","doi":"10.1109/ccece.2008.4564745","title":"Light controlled oscillators; pixel architecture for large area linear digital imaging using amorphous silicon","year":2008,"lang":"en","type":"article","venue":"Conference proceedings - Canadian Conference on Electrical and Computer Engineering","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":2,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":true,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Thin-film transistor; Materials science; Ring oscillator; Optoelectronics; Amorphous silicon; Transistor; Biasing; Detector; Silicon; Electronic circuit; Logic gate; Sensitivity (control systems); Voltage; Electrical engineering; Optics; Electronic engineering; Engineering; Physics; CMOS; Crystalline silicon; Nanotechnology; Layer (electronics)","score_opus":0.012508296287631665,"score_gpt":0.18128825774968937,"score_spread":0.1687799614620577,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2150875398","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.3763368,0.0020822745,0.6069676,0.00034263573,0.00015899175,0.00013936927,0.0003991502,0.004260163,0.0093129305],"genre_scores_gemma":[0.84300965,0.00034378274,0.1511726,0.000079698,0.00005595724,0.000052088584,0.00012956982,0.00006897353,0.00508765],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99992335,0.000010643166,0.000003272427,0.000027383918,0.00002708495,0.000008289737],"domain_scores_gemma":[0.9999056,0.000033727167,0.000023513647,0.000009626406,0.000020203526,0.000007474236],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000109732806,0.00020892452,0.00011440841,0.00018481574,0.00018546608,0.00037771804,0.0006541184,0.00022219932,0.002022289],"category_scores_gemma":[0.00017624415,0.00012403609,0.00009069457,0.00016357462,0.0002376355,0.00044136547,0.00016725037,0.00020778044,0.0003947596],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00018617287,0.00004332128,0.00078282197,0.00011749885,0.000025582773,0.00022768625,0.00006953853,0.0045929938,0.9280958,0.008128689,0.0015434547,0.05618633],"study_design_scores_gemma":[0.00012650188,0.0009164448,0.0031776633,0.00003259121,0.000105444284,0.00096554303,0.00007448444,0.18698683,0.777651,0.0062345527,0.023678035,0.000050870425],"about_ca_topic_score_codex":0.0003328847,"about_ca_topic_score_gemma":0.00096329453,"teacher_disagreement_score":0.002022289,"about_ca_system_score_codex":0.00026313393,"about_ca_system_score_gemma":0.0001449374,"threshold_uncertainty_score":0.0067652464},"labels":[],"label_agreement":null},{"id":"W2151430266","doi":"10.1139/cjp-2013-0018","title":"Upper limit on room-temperature diffusion of metal impurities interstitially dissolved in amorphous Si","year":2013,"lang":"en","type":"article","venue":"Canadian Journal of Physics","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":true,"route_about_ca":false,"ca_institutions":"Université de Montréal","funders":"","keywords":"Thermal diffusivity; Impurity; Amorphous solid; Hydrogen; Doping; Diffusion; Materials science; Metal; Amorphous metal; Amorphous carbon; Ion; Silicon; Activation energy; Analytical Chemistry (journal); Atomic physics; Condensed matter physics; Thermodynamics; Chemical physics; Physics; Crystallography; Physical chemistry; Metallurgy; Chemistry","score_opus":0.006298545605915034,"score_gpt":0.16946854221314864,"score_spread":0.1631699966072336,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2151430266","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.990275,0.0014881516,0.004697601,0.00006630687,0.00001380828,0.000008263295,0.0003015144,0.00010846768,0.003040874],"genre_scores_gemma":[0.9975472,0.00025966775,0.0010544445,0.00001649508,0.0000068584886,0.000012600527,0.00032311,0.000014399219,0.0007651822],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998443,0.000015662954,0.0000119539345,0.00004644752,0.000048758495,0.000032930664],"domain_scores_gemma":[0.9994242,0.00023782645,0.000058319187,0.000081947364,0.00015072644,0.000047049707],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00020294689,0.00018579107,0.0003082831,0.00022506392,0.00022528184,0.0006913231,0.00029838117,0.00033898605,0.0017093413],"category_scores_gemma":[0.0006591009,0.00016629674,0.00014777757,0.000114584065,0.00039270686,0.0005157979,0.00021433871,0.0004328796,0.00048080823],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00034858304,0.00003685929,0.0051146434,0.00006939635,0.000015997992,0.00019339794,0.00012744809,0.0008265767,0.98998135,0.0008682196,0.000117479554,0.0022999658],"study_design_scores_gemma":[0.000011673096,0.00033419466,0.015359613,0.000021453308,0.000029851455,0.00025816905,0.000115538096,0.0047269287,0.9770775,0.0002619964,0.001784021,0.000019092633],"about_ca_topic_score_codex":0.0019382392,"about_ca_topic_score_gemma":0.0020629987,"teacher_disagreement_score":0.0019382392,"about_ca_system_score_codex":0.00042446822,"about_ca_system_score_gemma":0.00028472635,"threshold_uncertainty_score":0.005718291},"labels":[],"label_agreement":null},{"id":"W2151790998","doi":"10.1109/cicc.2006.320873","title":"A Driving Scheme for AMOLED Displays Based on Current Feedback","year":2006,"lang":"en","type":"article","venue":"","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":5,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"CMC Microsystems","keywords":"AMOLED; Amplifier; OLED; Thin-film transistor; CMOS; Transistor; Optoelectronics; Current (fluid); Settling time; Materials science; Electronic circuit; Computer science; Electrical engineering; Electronic engineering; Voltage; Engineering; Nanotechnology","score_opus":0.007621909942225513,"score_gpt":0.2072637172234896,"score_spread":0.1996418072812641,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2151790998","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.37518978,0.0016116943,0.601277,0.00067393814,0.0004775377,0.00067337794,0.00070139463,0.009458078,0.009937181],"genre_scores_gemma":[0.7031521,0.00055270246,0.28699854,0.00041675018,0.00012070843,0.00028724477,0.0002679385,0.00026481537,0.007939111],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99983335,0.000014705491,0.000008086813,0.000051572046,0.000071836796,0.000020341746],"domain_scores_gemma":[0.99972624,0.00008520778,0.000032456723,0.000052319865,0.0000736853,0.00003013344],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00015550209,0.00034248029,0.00020206411,0.00032565245,0.00038846233,0.00031016694,0.001317279,0.0005318066,0.0026246968],"category_scores_gemma":[0.0004213692,0.00025130465,0.0001777436,0.0001772724,0.0002715103,0.00058978214,0.0004055297,0.0005009651,0.00090042135],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00008580966,0.00003146062,0.00024066903,0.000053827986,0.0000060412044,0.00008322988,0.00005265618,0.0001815607,0.97446024,0.0011088887,0.0006690063,0.023026621],"study_design_scores_gemma":[0.00004391313,0.0004309481,0.001352503,0.000016280881,0.000022329901,0.00083880447,0.00001820717,0.011081912,0.9696173,0.0007534197,0.015786063,0.000038430688],"about_ca_topic_score_codex":0.0003613995,"about_ca_topic_score_gemma":0.00046424512,"teacher_disagreement_score":0.0026246968,"about_ca_system_score_codex":0.00036730632,"about_ca_system_score_gemma":0.00016796909,"threshold_uncertainty_score":0.008780479},"labels":[],"label_agreement":null},{"id":"W2152269655","doi":"10.1109/wcpec.2006.279393","title":"Defect Density in Doped Amorphous Layer and Interface of Silicon Heterojunction Devices Obtained with the Constant Photocurrent Method","year":2006,"lang":"en","type":"article","venue":"","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":2,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Toronto","funders":"","keywords":"Materials science; Amorphous silicon; Heterojunction; Photocurrent; Amorphous solid; Silicon; Optoelectronics; Doping; Substrate (aquarium); Layer (electronics); Nanocrystalline silicon; Photoconductivity; Crystalline silicon; Nanotechnology; Crystallography; Chemistry","score_opus":0.009215345030329484,"score_gpt":0.23266068524188477,"score_spread":0.2234453402115553,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2152269655","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.96882385,0.0006264762,0.028890245,0.000018868952,0.000007040592,0.000014788422,0.00013650113,0.00015089255,0.0013314169],"genre_scores_gemma":[0.9920368,0.00021385752,0.007342507,0.0000071166282,0.0000033581325,0.000012838587,0.00008894866,0.000013292912,0.0002812517],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998492,0.000019704685,0.0000063128246,0.000037241385,0.000073730786,0.000013733516],"domain_scores_gemma":[0.9996587,0.00016899098,0.000055339377,0.00004354745,0.000060120474,0.000013410407],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00024571127,0.00026279598,0.00025495366,0.0006898209,0.00013815261,0.0002908799,0.00038376253,0.00025518032,0.0006693189],"category_scores_gemma":[0.0005725174,0.00015123376,0.00016596218,0.0004631982,0.00030185792,0.0003497347,0.00019475036,0.00030755595,0.00010166163],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00007581673,0.000028089484,0.002334653,0.0000863841,0.000017419814,0.00012891904,0.00007990122,0.0012940005,0.98703915,0.0013046134,0.000039290764,0.0075718034],"study_design_scores_gemma":[0.000008289243,0.00014289258,0.010023955,0.000012510905,0.000024455574,0.00034712485,0.00004585342,0.027924959,0.9606109,0.00038930995,0.00045693302,0.000012690362],"about_ca_topic_score_codex":0.0004973339,"about_ca_topic_score_gemma":0.00056111894,"teacher_disagreement_score":0.0006898209,"about_ca_system_score_codex":0.00021321542,"about_ca_system_score_gemma":0.00008430917,"threshold_uncertainty_score":0.002239108},"labels":[],"label_agreement":null},{"id":"W2152408330","doi":"10.1109/ted.2008.2011679","title":"Influence of Channel Stoichiometry on Zinc Indium Oxide Thin-Film Transistor Performance","year":2009,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":25,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Dalhousie University","funders":"","keywords":"Stoichiometry; Annealing (glass); Transistor; Materials science; Thin-film transistor; Zinc; Indium; Sputtering; Optoelectronics; Analytical Chemistry (journal); Threshold voltage; Thin film; Subthreshold conduction; Oxide; Semiconductor; Subthreshold slope; Voltage; Nanotechnology; Electrical engineering; Chemistry; Metallurgy; Layer (electronics); Physical chemistry","score_opus":0.006783900093442047,"score_gpt":0.20766145163019006,"score_spread":0.20087755153674802,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2152408330","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9985274,0.0002719795,0.00038005147,0.00001899606,0.000009611102,0.000008944899,0.000083679326,0.000037418817,0.00066181365],"genre_scores_gemma":[0.9985697,0.0002250088,0.0005809745,0.000009781443,0.0000034537902,0.000008455531,0.000102494116,0.00002667011,0.00047344578],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998541,0.00002037529,0.000015794178,0.000040271505,0.000036966874,0.000032401367],"domain_scores_gemma":[0.99961346,0.00020401076,0.00004573103,0.00002379004,0.00006782945,0.000045176315],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0002421564,0.00031464186,0.00032205248,0.00019966667,0.0002059053,0.00067714613,0.00029421036,0.00018976555,0.0013053779],"category_scores_gemma":[0.0008515129,0.00029838915,0.000086710905,0.00018360627,0.0001462093,0.00028635867,0.00016360848,0.0001284518,0.00029963374],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00027511886,0.000025888354,0.0022226472,0.000075763026,0.000016115871,0.000115498704,0.000038614315,0.0004539658,0.99491054,0.00008528483,0.000036654077,0.001743917],"study_design_scores_gemma":[0.000022496932,0.00019950356,0.0055159214,0.0000066355224,0.00005375806,0.00012511623,0.00005049188,0.0019160681,0.9916236,0.000030352776,0.00044939958,0.000006608607],"about_ca_topic_score_codex":0.00092656486,"about_ca_topic_score_gemma":0.0020702288,"teacher_disagreement_score":0.0013053779,"about_ca_system_score_codex":0.00022613899,"about_ca_system_score_gemma":0.00017790367,"threshold_uncertainty_score":0.0043668747},"labels":[],"label_agreement":null},{"id":"W2152617954","doi":"10.1109/jdt.2005.858913","title":"Driving Schemes for a-Si and LTPS AMOLED Displays","year":2005,"lang":"en","type":"article","venue":"Journal of Display Technology","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":251,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"AMOLED; Backplane; OLED; Active matrix; Electronic circuit; Materials science; Diode; Optoelectronics; Parasitic extraction; Electronic engineering; Computer science; Electrical engineering; Engineering; Thin-film transistor; Nanotechnology","score_opus":0.004603720144919436,"score_gpt":0.213258007605485,"score_spread":0.20865428746056555,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2152617954","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.7118695,0.0069663776,0.25978506,0.00056705234,0.00023101528,0.0002916317,0.00036626667,0.0012872544,0.01863584],"genre_scores_gemma":[0.92549634,0.0018551833,0.0669211,0.00010327915,0.000055522643,0.00009564768,0.00008590794,0.00008576027,0.005301225],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99989915,0.00001074682,0.000011107212,0.000022558732,0.000047906822,0.000008551068],"domain_scores_gemma":[0.9998722,0.000040110866,0.000029768773,0.000016688467,0.000034256038,0.0000069138837],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00010739482,0.0001351557,0.00010786797,0.00020706313,0.00019004366,0.00028718985,0.000455268,0.0002570508,0.0013218442],"category_scores_gemma":[0.00029291338,0.0001075268,0.00012268219,0.00014791517,0.00012825585,0.00039335503,0.00015973607,0.00021789067,0.0003508797],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00005846675,0.000014804297,0.00020275012,0.00015810144,0.00000592123,0.00005449919,0.00006529837,0.0004923049,0.95844483,0.003485908,0.00031016077,0.03670688],"study_design_scores_gemma":[0.000015666286,0.00025461547,0.0010700774,0.000021444315,0.000015675208,0.00053532777,0.000029024206,0.011190379,0.9709427,0.0012362475,0.014673195,0.000015759193],"about_ca_topic_score_codex":0.000101254605,"about_ca_topic_score_gemma":0.00020324474,"teacher_disagreement_score":0.0013218442,"about_ca_system_score_codex":0.00024570402,"about_ca_system_score_gemma":0.00009056658,"threshold_uncertainty_score":0.004422009},"labels":[],"label_agreement":null},{"id":"W2153295665","doi":"10.1889/1.2433457","title":"P‐7: A Novel Driving Scheme and Pixel Circuit for AMOLED Displays","year":2006,"lang":"en","type":"article","venue":"SID Symposium Digest of Technical Papers","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":3,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"AMOLED; Pixel; Scheme (mathematics); OLED; Computer science; Computer hardware; Computer graphics (images); Materials science; Artificial intelligence; Thin-film transistor; Mathematics; Nanotechnology; Layer (electronics)","score_opus":0.006683705063117344,"score_gpt":0.19187364057522913,"score_spread":0.18518993551211177,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2153295665","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.70526975,0.0010970434,0.26982245,0.0010172545,0.00040216127,0.00024411372,0.00047490682,0.005746392,0.01592594],"genre_scores_gemma":[0.9236523,0.00021280568,0.06959948,0.00027607207,0.00013002832,0.000080595644,0.00012300964,0.00008301425,0.0058426512],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998894,0.000009580302,0.000005812953,0.000028134828,0.000049254464,0.000017826864],"domain_scores_gemma":[0.99987507,0.000027446467,0.000016175853,0.0000182933,0.00004462417,0.000018352379],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000102189195,0.00019070896,0.00015733961,0.00022380824,0.0002897821,0.00032851315,0.001166513,0.0005320178,0.002380333],"category_scores_gemma":[0.00021005527,0.00015384643,0.00011206181,0.0001319491,0.00018911978,0.0005231792,0.00026054936,0.00031912327,0.0006251947],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00016155312,0.00005888724,0.00039513214,0.00006789083,0.000014071153,0.000256544,0.00005508601,0.00049395836,0.9460546,0.0028407925,0.0020266338,0.04757492],"study_design_scores_gemma":[0.00005978798,0.00061911374,0.0015995142,0.00001555613,0.00003129696,0.0012366885,0.000017680508,0.030299047,0.94603074,0.00082393904,0.019233039,0.000033580323],"about_ca_topic_score_codex":0.00033048683,"about_ca_topic_score_gemma":0.0005260261,"teacher_disagreement_score":0.002380333,"about_ca_system_score_codex":0.00026350425,"about_ca_system_score_gemma":0.00021524928,"threshold_uncertainty_score":0.007963061},"labels":[],"label_agreement":null},{"id":"W2155168141","doi":"10.1109/iscas.2006.1692642","title":"High-precision, fast current source for large-area current-programmed a-Si flat panels","year":2006,"lang":"en","type":"article","venue":"","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":4,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Active matrix; Current (fluid); Backplane; Thin-film transistor; Materials science; Current mirror; Optoelectronics; Transistor; Current source; Parasitic capacitance; Capacitance; Offset (computer science); Settling time; Electronic circuit; Electronic engineering; Electrical engineering; Computer science; Voltage; Engineering; Nanotechnology; Physics; Electrode","score_opus":0.017371413105502383,"score_gpt":0.23278770248064865,"score_spread":0.21541628937514626,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2155168141","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.33770266,0.0018738568,0.6275477,0.00087456056,0.000568243,0.00030344265,0.00079816376,0.0087767,0.021554671],"genre_scores_gemma":[0.88091147,0.00024030387,0.11005805,0.00018427144,0.00011441139,0.00006990068,0.00019890035,0.00038008616,0.007842695],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9997882,0.000019355028,0.000009072125,0.000039697014,0.00012850882,0.000015208751],"domain_scores_gemma":[0.99914753,0.00028960322,0.00010368485,0.000114533694,0.00029158973,0.00005300701],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00023924073,0.00026979073,0.00023103612,0.0003875419,0.00036071727,0.0005250188,0.0011239857,0.00048203257,0.0044990634],"category_scores_gemma":[0.0008220694,0.00021214776,0.00012180142,0.0003632393,0.00020788984,0.0007174743,0.0004031305,0.000549503,0.0012130869],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00028014465,0.000057117108,0.00051123166,0.00012321939,0.000013016628,0.00021955906,0.00013905499,0.0012449004,0.92721206,0.002388603,0.0029465482,0.06486444],"study_design_scores_gemma":[0.00006239673,0.0003724222,0.0013349816,0.000022104301,0.00001650576,0.00038594785,0.000042426556,0.025718499,0.9589996,0.00075803034,0.012255208,0.000031887128],"about_ca_topic_score_codex":0.00031557918,"about_ca_topic_score_gemma":0.00080219435,"teacher_disagreement_score":0.0044990634,"about_ca_system_score_codex":0.00040110212,"about_ca_system_score_gemma":0.0003057442,"threshold_uncertainty_score":0.015050888},"labels":[],"label_agreement":null},{"id":"W2155233413","doi":"10.1109/cjece.2008.4721630","title":"Selenium-based amorphous silicon flat-panel digital X-ray imager for protein crystallography","year":2008,"lang":"en","type":"article","venue":"Canadian Journal of Electrical and Computer Engineering","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":true,"route_about_ca":false,"ca_institutions":"Health Sciences Centre; Sunnybrook Health Science Centre; University of Waterloo","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Thin-film transistor; Detector; Amorphous silicon; X-ray detector; Optoelectronics; Backplane; Sensitivity (control systems); Dynamic range; Quantum efficiency; Transistor; Materials science; Physics; Diffraction; Wide dynamic range; Silicon; Amorphous solid; Optics; Crystallography; Nanotechnology; Chemistry; Crystalline silicon; Computer science; Computer hardware; Electronic engineering","score_opus":0.007723264855953087,"score_gpt":0.14729233518928964,"score_spread":0.13956907033333654,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2155233413","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.34337473,0.0036872088,0.62564003,0.00057087635,0.00029965688,0.00023254167,0.0013213691,0.0076446505,0.017228873],"genre_scores_gemma":[0.42944786,0.0019363648,0.5519438,0.00031347817,0.00006974308,0.00013396847,0.0013061478,0.00022063118,0.014628048],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998072,0.00001890782,0.000008438732,0.000047204125,0.00010478706,0.000013495863],"domain_scores_gemma":[0.99984634,0.00003992877,0.000017486695,0.000026722268,0.00005387632,0.000015609483],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00017633357,0.0003279762,0.0003281363,0.000355148,0.00022556899,0.00041407326,0.0013368591,0.0005409092,0.002673395],"category_scores_gemma":[0.00022425018,0.00024080262,0.00032142887,0.00034529172,0.00020700452,0.00049118034,0.000322889,0.00039952394,0.0014003642],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00009416266,0.000043621065,0.0005981095,0.00011981783,0.00002383513,0.0001796671,0.000028331922,0.0006012148,0.9558152,0.0015014755,0.0015104425,0.039484218],"study_design_scores_gemma":[0.000030465888,0.00023749057,0.0017728921,0.000012480993,0.00003446096,0.00072671456,0.000036621317,0.025146091,0.9580748,0.00028006188,0.013621103,0.00002669036],"about_ca_topic_score_codex":0.00042029624,"about_ca_topic_score_gemma":0.0012425138,"teacher_disagreement_score":0.002673395,"about_ca_system_score_codex":0.00026944987,"about_ca_system_score_gemma":0.00024674236,"threshold_uncertainty_score":0.008943379},"labels":[],"label_agreement":null},{"id":"W2156918382","doi":"10.1557/proc-609-a5.1","title":"Molecular Beam Epitaxially Deposited Amorphous Silicon","year":2000,"lang":"en","type":"article","venue":"MRS Proceedings","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":5,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Regina; National Research Council Canada; Institute for Microstructural Sciences","funders":"","keywords":"Silicon; Materials science; Nanocrystalline silicon; Amorphous silicon; Amorphous solid; Substrate (aquarium); Strained silicon; Impurity; Raman spectroscopy; Optoelectronics; Crystalline silicon; Optics; Crystallography; Chemistry; Organic chemistry","score_opus":0.004172176081580238,"score_gpt":0.1723179343402612,"score_spread":0.16814575825868094,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2156918382","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9847334,0.00067464967,0.0014768625,0.00019843804,0.0001591579,0.000032848006,0.0007147292,0.0001837178,0.011826235],"genre_scores_gemma":[0.98660153,0.00041720446,0.0025698526,0.00006105964,0.000036146637,0.00002301559,0.00042618395,0.000026756565,0.009838211],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999181,0.0000036722374,0.0000036488514,0.000021616494,0.000032064192,0.000020792026],"domain_scores_gemma":[0.9999268,0.000016619493,0.000019329043,0.000013744815,0.000014471953,0.000009102156],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000071114344,0.00017897319,0.0002601986,0.00022895723,0.00024065295,0.000501834,0.00032247862,0.000317241,0.0034585982],"category_scores_gemma":[0.00019147567,0.00022934134,0.00008345688,0.00025717067,0.0001569201,0.00024146176,0.0002268298,0.00033293958,0.0006646015],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00008680752,0.000017355977,0.00023732797,0.000060260354,0.0000081003955,0.00010075756,0.000037077138,0.00016084974,0.99705267,0.00065418554,0.0004131058,0.0011715747],"study_design_scores_gemma":[0.000045006083,0.00020390055,0.0027643628,0.000010026224,0.00001379995,0.00012617875,0.00008277436,0.0021639625,0.9879265,0.00008986614,0.006565878,0.000007865832],"about_ca_topic_score_codex":0.0016892465,"about_ca_topic_score_gemma":0.0043084403,"teacher_disagreement_score":0.0034585982,"about_ca_system_score_codex":0.00038925803,"about_ca_system_score_gemma":0.00029416967,"threshold_uncertainty_score":0.011570156},"labels":[],"label_agreement":null},{"id":"W2157029479","doi":"10.1557/proc-609-a10.1","title":"X-RAY Photoemission Spectroscopic Study of Light-Induced Structural Changes in Amorphous Silicon","year":2000,"lang":"en","type":"article","venue":"MRS Proceedings","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":4,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Polytechnique Montréal","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"X-ray photoelectron spectroscopy; Materials science; Metastability; Irradiation; Annealing (glass); Amorphous solid; Silicon; Amorphous silicon; Photoemission spectroscopy; Crystalline silicon; Photon energy; Analytical Chemistry (journal); Crystallography; Photon; Optics; Optoelectronics; Chemistry; Nuclear magnetic resonance","score_opus":0.009981184353916005,"score_gpt":0.21718744601079984,"score_spread":0.20720626165688383,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2157029479","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9985796,0.0001445373,0.00031125106,0.000023871104,0.0000038648404,0.0000048031793,0.00005857215,0.000015197699,0.0008582623],"genre_scores_gemma":[0.99893945,0.00007847519,0.00022327802,0.000012770493,0.0000025232594,0.0000037089867,0.00007277952,0.000005026276,0.0006619994],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999516,0.0000063258026,0.0000022425024,0.000010318935,0.000016954316,0.000012604065],"domain_scores_gemma":[0.9998306,0.00007994501,0.000023575607,0.0000134549,0.000037629045,0.00001467992],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00010739605,0.00015332039,0.0001328775,0.00029928147,0.0003214485,0.00024350248,0.00025757065,0.00029915167,0.0023299118],"category_scores_gemma":[0.00023434196,0.00012630549,0.00013142923,0.0002627762,0.00029554204,0.0002833061,0.00013662419,0.0003083672,0.00018437642],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0002796476,0.000041568517,0.00093862374,0.000054029646,0.000010543708,0.00013662534,0.000106065236,0.00012801685,0.99638426,0.00023629087,0.00006577223,0.0016185578],"study_design_scores_gemma":[0.000022090228,0.0002599418,0.018329794,0.0000064036576,0.000013308036,0.00020363196,0.00022945386,0.0017688664,0.97849643,0.00007817293,0.0005854763,0.0000064272617],"about_ca_topic_score_codex":0.0010089615,"about_ca_topic_score_gemma":0.0012667194,"teacher_disagreement_score":0.0023299118,"about_ca_system_score_codex":0.00016692712,"about_ca_system_score_gemma":0.00012971071,"threshold_uncertainty_score":0.0077943206},"labels":[],"label_agreement":null},{"id":"W2157130555","doi":"10.1557/opl.2011.65","title":"Effect of Phosphorus Doping on the Young’s Modulus and Stress of Polysilicon Thin Films","year":2011,"lang":"en","type":"article","venue":"MRS Proceedings","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Natural Sciences and Engineering Research Council of Canada; Ontario Centres of Excellence; CMC Microsystems","keywords":"Materials science; Doping; Dopant; Modulus; Polysilicon depletion effect; Composite material; Young's modulus; Ultimate tensile strength; Stress (linguistics); Phosphorus; Microelectromechanical systems; Fabrication; Residual stress; Analytical Chemistry (journal); Optoelectronics; Metallurgy; Electrical engineering; Transistor","score_opus":0.008891399884193364,"score_gpt":0.18531873014250938,"score_spread":0.17642733025831603,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2157130555","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99870205,0.00025790324,0.0001376098,0.000051180068,0.000018356775,0.0000030780054,0.00008159193,0.000009266334,0.00073898904],"genre_scores_gemma":[0.9985763,0.00025801195,0.00022806769,0.000019592073,0.000009034207,0.000005815348,0.00008604702,0.000014098754,0.00080307125],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998735,0.000015546084,0.000011453938,0.000024529601,0.000043653785,0.000031309515],"domain_scores_gemma":[0.99952257,0.00026652965,0.0000819695,0.000023385737,0.00006226569,0.0000431771],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00024456254,0.0003184528,0.00022081153,0.00022856465,0.00023628514,0.00042201075,0.00022714926,0.00032586305,0.0019860817],"category_scores_gemma":[0.0006523607,0.00028681388,0.00014524565,0.0002977202,0.00033217648,0.0004165884,0.00016221864,0.000339822,0.00020621729],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0005533537,0.000027338212,0.0005413738,0.000051858187,0.000019225921,0.00024502812,0.00008758345,0.00033942307,0.9966905,0.00013314874,0.00006501497,0.0012461006],"study_design_scores_gemma":[0.000018044268,0.0002590557,0.0036488802,0.000009935176,0.00001887369,0.00006984635,0.000067485715,0.0016018398,0.9938632,0.00004055688,0.00039269004,0.000009676711],"about_ca_topic_score_codex":0.0008982149,"about_ca_topic_score_gemma":0.0012657727,"teacher_disagreement_score":0.0019860817,"about_ca_system_score_codex":0.0002219137,"about_ca_system_score_gemma":0.00019536205,"threshold_uncertainty_score":0.0066441298},"labels":[],"label_agreement":null},{"id":"W2157620328","doi":"10.1139/cjp-2013-0635","title":"Development of a-Si solar cells using “liquid–Si printing”","year":2014,"lang":"en","type":"article","venue":"Canadian Journal of Physics","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":2,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":false,"route_ca_venue":true,"route_about_ca":false,"ca_institutions":"","funders":"","keywords":"Photoconductivity; Void (composites); Plasma; Amorphous silicon; Optoelectronics; Chemical vapor deposition; Amorphous solid; Layer (electronics); Materials science; Solar cell; Plasma-enhanced chemical vapor deposition; Thin film; Energy conversion efficiency; Silicon; Carbon film; Composite material; Nanotechnology; Physics; Crystalline silicon; Chemistry; Crystallography","score_opus":0.0157213717025579,"score_gpt":0.1869139609691998,"score_spread":0.17119258926664188,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2157620328","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9714976,0.0008753272,0.01976774,0.00010830748,0.000100018566,0.0001581518,0.00057269965,0.00047342735,0.006446691],"genre_scores_gemma":[0.9434622,0.0009643027,0.051720586,0.000067842084,0.0000313101,0.00010670931,0.0004485485,0.00009622187,0.0031023903],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99988353,0.000007675292,0.000010825281,0.000029002324,0.00005318515,0.000015709256],"domain_scores_gemma":[0.99988985,0.00003185287,0.000015484931,0.000021430369,0.000026729982,0.00001464583],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000153322,0.00031338062,0.00030962715,0.00020754008,0.00023651795,0.00036658693,0.00051223836,0.00041280422,0.0011297168],"category_scores_gemma":[0.00021070338,0.00030461184,0.00032096496,0.00025588123,0.00018585485,0.00044723423,0.00020303439,0.00059535966,0.00061912485],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000015018433,0.000024613684,0.00008862114,0.000029284076,0.0000042199704,0.000057941405,0.000010742325,0.0001587992,0.9971949,0.00009168146,0.00004090461,0.0022833864],"study_design_scores_gemma":[0.000006749543,0.00009686525,0.0004995639,0.0000017420003,0.000005397966,0.00006280023,0.0000042340766,0.0013413691,0.99729973,0.000021538332,0.00065716426,0.0000028581187],"about_ca_topic_score_codex":0.00052257534,"about_ca_topic_score_gemma":0.0010088797,"teacher_disagreement_score":0.0011297168,"about_ca_system_score_codex":0.00025524967,"about_ca_system_score_gemma":0.00022862108,"threshold_uncertainty_score":0.003779292},"labels":[],"label_agreement":null},{"id":"W2158382796","doi":"10.1109/ted.2010.2051370","title":"Fast Lateral Amorphous-Selenium Metal–Semiconductor–Metal Photodetector With High Blue-to-Ultraviolet Responsivity","year":2010,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":21,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Photodetector; Responsivity; Optoelectronics; Ultraviolet; Semiconductor detector; Semiconductor; Notation; Detector; Materials science; Amorphous solid; Metal; Physics; Optics; Chemistry; Crystallography; Mathematics","score_opus":0.00587063182852703,"score_gpt":0.20233692613448598,"score_spread":0.19646629430595894,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2158382796","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9562578,0.00087055215,0.03538838,0.00019920163,0.00006936114,0.00005596173,0.00040953374,0.0013043055,0.0054449346],"genre_scores_gemma":[0.9498304,0.0003725327,0.042226456,0.00011111293,0.000023728348,0.00005554118,0.00023279578,0.00008854556,0.007058832],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.999757,0.00001970693,0.000011002512,0.000068727815,0.0001127802,0.000030836276],"domain_scores_gemma":[0.99981254,0.000042478165,0.000031653944,0.000030176245,0.000061634964,0.000021457956],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00027716949,0.0003487753,0.00044383763,0.00025756328,0.00023173523,0.00044225156,0.0006508283,0.0004607743,0.0015558137],"category_scores_gemma":[0.00025574322,0.00026796164,0.00030684308,0.0003909777,0.00018192669,0.0003832107,0.0005000362,0.00033484504,0.00077801966],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00005694791,0.00001739409,0.00039577778,0.00004247078,0.000010977315,0.00010787023,0.000027976086,0.00009706548,0.99510163,0.00026502655,0.00025901536,0.0036177519],"study_design_scores_gemma":[0.000014931613,0.00020290064,0.0024871815,0.0000072136286,0.000019954217,0.0004017824,0.000032796666,0.0049027493,0.98878354,0.00007380749,0.0030586491,0.000014460144],"about_ca_topic_score_codex":0.0005829931,"about_ca_topic_score_gemma":0.001506683,"teacher_disagreement_score":0.0015558137,"about_ca_system_score_codex":0.00032526586,"about_ca_system_score_gemma":0.00025507182,"threshold_uncertainty_score":0.0052046776},"labels":[],"label_agreement":null},{"id":"W2158783691","doi":"10.1557/proc-0989-a20-04","title":"Hot-Wire Deposited Nanocrystalline Silicon TFTs on Plastic Substrates","year":2007,"lang":"en","type":"article","venue":"MRS Proceedings","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":2,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Simon Fraser University","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Materials science; Thin-film transistor; Nanocrystalline silicon; Optoelectronics; Substrate (aquarium); Amorphous silicon; Plasma-enhanced chemical vapor deposition; Silicon; Nanocrystalline material; Amorphous solid; Chemical vapor deposition; Composite material; Nanotechnology; Crystalline silicon; Layer (electronics); Crystallography","score_opus":0.008506172333493963,"score_gpt":0.19774339486299025,"score_spread":0.1892372225294963,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2158783691","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99456763,0.0004897945,0.0011988893,0.00010646163,0.000069679816,0.000014265248,0.00038639348,0.00012367715,0.0030431761],"genre_scores_gemma":[0.9952484,0.00024969928,0.0015879734,0.000025614601,0.000015660506,0.000013947736,0.00019503954,0.000035731035,0.0026280968],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998394,0.000006261487,0.000008225469,0.00004176839,0.000047889345,0.00005636768],"domain_scores_gemma":[0.9997613,0.00006767664,0.00004945312,0.000058606125,0.000044513516,0.00001852274],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000112895075,0.00018940562,0.00036154405,0.00023866752,0.00032078323,0.00033296246,0.00046172008,0.00028991778,0.0032924553],"category_scores_gemma":[0.00035553233,0.00025128835,0.00013649031,0.0002768011,0.0001726769,0.0004313165,0.00019623109,0.00027405538,0.0005523747],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00019298644,0.000011359059,0.00040121304,0.00007768336,0.000013253502,0.00024160695,0.00008413628,0.00032639081,0.99631727,0.00015134078,0.00035438253,0.0018282746],"study_design_scores_gemma":[0.000014211836,0.00010219863,0.0019529464,0.000006556947,0.000008972024,0.00008049065,0.00007269492,0.0012072149,0.99563295,0.00003176948,0.00088414055,0.000005746034],"about_ca_topic_score_codex":0.0028880688,"about_ca_topic_score_gemma":0.0063948645,"teacher_disagreement_score":0.0032924553,"about_ca_system_score_codex":0.00071403175,"about_ca_system_score_gemma":0.00023289636,"threshold_uncertainty_score":0.011014342},"labels":[],"label_agreement":null},{"id":"W2159574133","doi":"10.1109/ted.2007.911094","title":"Characterization of Short-Wavelength-Selective a-Si:H MSM Photoconductors for Large-Area Digital-Imaging Applications","year":2008,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":20,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Simon Fraser University","keywords":"Photodetector; Responsivity; Optoelectronics; Materials science; Photocurrent; Fabrication; Thin-film transistor; Photodiode; Quantum efficiency; Amorphous silicon; Photoconductivity; Thin film; Silicon; Optics; Crystalline silicon; Nanotechnology; Physics","score_opus":0.014740419088149909,"score_gpt":0.22460679086305504,"score_spread":0.20986637177490514,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2159574133","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9939044,0.0007221858,0.0044014696,0.00003089516,0.000010954169,0.000020360136,0.00017370984,0.000055941407,0.00068009755],"genre_scores_gemma":[0.9950153,0.00024387673,0.0040027667,0.0000131437155,0.000005351815,0.000012905385,0.000076590586,0.000007158904,0.0006228172],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999,0.000011580587,0.00000771415,0.000025116376,0.00004325008,0.0000123260015],"domain_scores_gemma":[0.9997801,0.00007994921,0.000034873407,0.000018715604,0.000064525535,0.00002186374],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00023453127,0.00022557222,0.0001412126,0.00025957814,0.0001449099,0.00021848879,0.0002562665,0.00028868928,0.0006239521],"category_scores_gemma":[0.00042294528,0.000097657554,0.000111686095,0.00020595791,0.0001404769,0.00020318814,0.00010856627,0.00013263027,0.00018098427],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000029818459,0.000007384508,0.00061786844,0.000017769062,0.0000031165057,0.000035897643,0.000023300481,0.000046659112,0.99782383,0.000044187458,0.00002066548,0.0013294702],"study_design_scores_gemma":[0.0000040301343,0.0001686394,0.0055113444,0.0000033266133,0.00000935577,0.00020246881,0.000038943253,0.0023811006,0.99112105,0.00003495611,0.00052145164,0.0000032485111],"about_ca_topic_score_codex":0.0007677612,"about_ca_topic_score_gemma":0.0011596036,"teacher_disagreement_score":0.0007677612,"about_ca_system_score_codex":0.00014416856,"about_ca_system_score_gemma":0.00013892501,"threshold_uncertainty_score":0},"labels":[],"label_agreement":null},{"id":"W2160456201","doi":"10.1109/led.2005.848116","title":"Markov model for threshold-voltage shift in amorphous silicon TFTs for variable gate bias","year":2005,"lang":"en","type":"article","venue":"IEEE Electron Device Letters","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":32,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Threshold voltage; Materials science; Optoelectronics; Silicon; Amorphous silicon; Logic gate; Amorphous semiconductors; Variable (mathematics); Amorphous solid; Voltage; Electronic engineering; Electrical engineering; Computer science; Transistor; Engineering; Chemistry; Mathematics; Crystalline silicon; Crystallography","score_opus":0.018244506459026925,"score_gpt":0.22875465796676886,"score_spread":0.21051015150774194,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2160456201","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.33715314,0.0015525384,0.64123595,0.002030639,0.00013808279,0.00012216749,0.0011395764,0.00092013937,0.015707666],"genre_scores_gemma":[0.98411417,0.00048844196,0.006394031,0.00013941932,0.000033222794,0.00011921847,0.00024374133,0.00005264981,0.008415173],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99974185,0.00004865526,0.000011688804,0.00005945912,0.00006313481,0.000075141725],"domain_scores_gemma":[0.99869496,0.00089028396,0.00013064897,0.000051428113,0.00017818113,0.0000545493],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00069052074,0.0005860014,0.0010236513,0.00041449448,0.0004968333,0.0006748394,0.001363689,0.0018046502,0.00361942],"category_scores_gemma":[0.0025551126,0.0003809442,0.00067164964,0.0004581026,0.00086644694,0.0013646919,0.00037736603,0.0012331682,0.0005292459],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0001258179,0.000022728243,0.00087575393,0.000052461168,0.000023073591,0.00023660842,0.00012562727,0.960838,0.0057792547,0.028452136,0.0007534445,0.0027150207],"study_design_scores_gemma":[0.0000046823443,0.000008172534,0.0001120582,0.0000029215614,0.000005025535,0.000017438015,0.000004246195,0.99666554,0.0003046052,0.0027854417,0.000086009,0.0000038580174],"about_ca_topic_score_codex":0.010772955,"about_ca_topic_score_gemma":0.009642282,"teacher_disagreement_score":0.010772955,"about_ca_system_score_codex":0.0018544869,"about_ca_system_score_gemma":0.0006487614,"threshold_uncertainty_score":0.021420479},"labels":[],"label_agreement":null},{"id":"W2160536727","doi":"10.1557/proc-0910-a08-05","title":"Effects of HWCVD-deposited Seed Layers on Hydrogenated Microcrystalline Silicon Films on Glass Substrates","year":2006,"lang":"en","type":"article","venue":"MRS Proceedings","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Simon Fraser University","funders":"British Columbia Knowledge Development Fund; Natural Sciences and Engineering Research Council of Canada","keywords":"Materials science; Microcrystalline; Silane; Raman spectroscopy; Chemical vapor deposition; Conductivity; Microcrystalline silicon; Layer (electronics); Silicon; Chemical engineering; Graphite; Composite material; Amorphous silicon; Crystalline silicon; Nanotechnology; Crystallography; Metallurgy; Optics; Chemistry","score_opus":0.003405416575883537,"score_gpt":0.17005319524685014,"score_spread":0.1666477786709666,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2160536727","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9979804,0.00056437263,0.00023108578,0.00003361568,0.00003083466,0.00001262507,0.00011730899,0.000040313276,0.000989522],"genre_scores_gemma":[0.9984137,0.00027535998,0.00038385505,0.000021310914,0.000010125604,0.000006906406,0.000094001894,0.000020783684,0.00077397696],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99981767,0.000018355771,0.000013131897,0.0000333292,0.000041332012,0.000076223456],"domain_scores_gemma":[0.9994093,0.00030951027,0.00007810189,0.00006494256,0.00008483825,0.0000533006],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000172898,0.0002786166,0.00041295536,0.00015384819,0.00028340847,0.0003678467,0.00033739477,0.00037273308,0.0028212187],"category_scores_gemma":[0.0005815521,0.00036197357,0.0002057583,0.00018651293,0.0002839686,0.00027146167,0.00025650705,0.00035980163,0.00028114516],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00069720653,0.000027190643,0.00038017152,0.00009621239,0.000021345499,0.00016901542,0.0000694066,0.00028428138,0.997349,0.000051984625,0.00010329547,0.00075085973],"study_design_scores_gemma":[0.00002431804,0.00020276103,0.0021246509,0.0000053986496,0.000010237179,0.000022871585,0.000045396737,0.00064219045,0.99667764,0.0000069320095,0.0002332835,0.0000043120504],"about_ca_topic_score_codex":0.006181924,"about_ca_topic_score_gemma":0.009149404,"teacher_disagreement_score":0.006181924,"about_ca_system_score_codex":0.0005825668,"about_ca_system_score_gemma":0.000283116,"threshold_uncertainty_score":0.012291908},"labels":[],"label_agreement":null},{"id":"W2161823757","doi":"10.1109/jdt.2005.863600","title":"Device and Circuit Level Optimization for High Performance a-Si:H TFT-Based AMOLED Displays","year":2006,"lang":"en","type":"article","venue":"Journal of Display Technology","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":6,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"AMOLED; Thin-film transistor; Active matrix; OLED; Backplane; Pixel; Transistor; Materials science; Optoelectronics; Electronic circuit; Brightness; Threshold voltage; Diode; Computer science; Electrical engineering; Voltage; Nanotechnology; Optics; Computer hardware; Artificial intelligence; Engineering; Physics","score_opus":0.01137386636827596,"score_gpt":0.19933290763306763,"score_spread":0.18795904126479168,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2161823757","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.86735827,0.0020614571,0.11807042,0.00054571085,0.00007933786,0.0001636278,0.0003337986,0.0011871542,0.010200234],"genre_scores_gemma":[0.9676188,0.00035643033,0.029531945,0.0000823685,0.000025000874,0.0000508012,0.00010079505,0.00007067134,0.0021631867],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99983704,0.000027513744,0.000010368522,0.00003365096,0.00006182433,0.00002950578],"domain_scores_gemma":[0.9997687,0.000106616186,0.000044126053,0.000013243359,0.000054055603,0.0000132790865],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00015500173,0.0003208322,0.0002753815,0.00019938436,0.00026033507,0.00061533024,0.00068570965,0.00047995328,0.0018661898],"category_scores_gemma":[0.00045045465,0.0002013915,0.00019590638,0.00022645791,0.0001241201,0.00044824573,0.0001603824,0.00023732212,0.00036637872],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00023018137,0.00013140868,0.0015442679,0.00030165553,0.00007654554,0.00015225919,0.00008760319,0.023949029,0.9445951,0.0019501948,0.0009980884,0.025983691],"study_design_scores_gemma":[0.00014071025,0.0012465722,0.004529081,0.000032057407,0.00015411788,0.00038463404,0.000070658956,0.23469102,0.7498389,0.0009511222,0.007924703,0.000036439294],"about_ca_topic_score_codex":0.00089971477,"about_ca_topic_score_gemma":0.002352927,"teacher_disagreement_score":0.0018661898,"about_ca_system_score_codex":0.0009067921,"about_ca_system_score_gemma":0.00034701516,"threshold_uncertainty_score":0.00657928},"labels":[],"label_agreement":null},{"id":"W2162022104","doi":"10.1007/s11664-008-0547-8","title":"Growth and Structural Characterization of Spherical Silicon Crystals Grown from Polysilicon","year":2008,"lang":"en","type":"article","venue":"Journal of Electronic Materials","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":7,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Recrystallization (geology); Materials science; Impurity; Silicon; SPHERES; Crystallinity; Crystalline silicon; Crystallography; Analytical Chemistry (journal); Composite material; Metallurgy; Chemistry","score_opus":0.005607287936448928,"score_gpt":0.18341736803005698,"score_spread":0.17781008009360805,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2162022104","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99723023,0.00018031175,0.0010841457,0.000036993562,0.000009474248,0.000010284523,0.00032032956,0.00003009182,0.0010980396],"genre_scores_gemma":[0.9962962,0.00015847628,0.0016652731,0.000011573619,0.0000039977303,0.000012501542,0.000552235,0.000032954773,0.0012666145],"study_design_codex":"bench_or_experimental","study_design_gemma":"observational","domain_scores_codex":[0.9999045,0.0000046654245,0.00000469877,0.000020671732,0.00005088217,0.000014570827],"domain_scores_gemma":[0.9997826,0.000059889742,0.00004544784,0.000022276228,0.00006816032,0.000021655902],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000097319265,0.00015341575,0.0001920075,0.00013682248,0.00024205438,0.00028418232,0.00021829784,0.00025431396,0.0006122905],"category_scores_gemma":[0.0003386837,0.00018446064,0.00012086924,0.00018171692,0.00022920602,0.00024299341,0.00013208493,0.0002344061,0.00021312213],"study_design_candidate":"observational","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0000317432,0.0000046626587,0.00024557064,0.000019935098,0.0000019033806,0.00003144575,0.000027738392,0.00018642018,0.9989248,0.00006394458,0.000039959206,0.0004218166],"study_design_scores_gemma":[0.0000056470826,0.00006710424,0.003542736,0.0000015676717,0.0000032364267,0.0000423545,0.000037537175,0.0021605243,0.9937257,0.000014496775,0.00039556745,0.0000035245175],"about_ca_topic_score_codex":0.003319139,"about_ca_topic_score_gemma":0.004994468,"teacher_disagreement_score":0.003319139,"about_ca_system_score_codex":0.00044563794,"about_ca_system_score_gemma":0.00038127974,"threshold_uncertainty_score":0.0065996647},"labels":[],"label_agreement":null},{"id":"W2164827488","doi":"10.1109/jproc.2005.851497","title":"Low-Temperature Materials and Thin Film Transistors for Flexible Electronics","year":2005,"lang":"en","type":"article","venue":"Proceedings of the IEEE","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":99,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Thin-film transistor; Materials science; Optoelectronics; Silicon nitride; Thin film; Dielectric; Fabrication; Silicon; Amorphous silicon; Amorphous solid; Diode; Active matrix; Threshold voltage; Transistor; Layer (electronics); Nanotechnology; Electrical engineering; Crystalline silicon; Voltage; Crystallography","score_opus":0.006127475035959174,"score_gpt":0.19154985206536582,"score_spread":0.18542237702940664,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2164827488","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.3860759,0.21584852,0.24956661,0.0044008256,0.0034844603,0.00040853952,0.0011299233,0.0034396374,0.13564555],"genre_scores_gemma":[0.78570545,0.048158903,0.12006976,0.0008910041,0.0006663703,0.00018269083,0.00055119576,0.00021017181,0.04356442],"study_design_codex":"bench_or_experimental","study_design_gemma":"not_applicable","domain_scores_codex":[0.9999156,0.000007756659,0.000003944177,0.00001935094,0.00004227763,0.000011058259],"domain_scores_gemma":[0.999959,0.000010260623,0.000008698399,0.0000073337337,0.00000979181,0.000004887011],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00009784389,0.00030091716,0.00017715193,0.00019511986,0.00019136595,0.00037133854,0.00044208215,0.00040588513,0.0036386114],"category_scores_gemma":[0.00016991193,0.00013881762,0.0002251004,0.00016385342,0.00028302587,0.0004951761,0.0002595373,0.00054300856,0.0014030575],"study_design_candidate":"not_applicable","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000042114458,0.000028077697,0.00031121873,0.00051641435,0.000018223158,0.00016650191,0.00007682501,0.0007933747,0.9210373,0.0150032705,0.0025530902,0.059453573],"study_design_scores_gemma":[0.000022466076,0.00024491263,0.001538949,0.00007627258,0.000036924863,0.00063642894,0.00005657637,0.004227959,0.80936956,0.004467474,0.17929502,0.000027433396],"about_ca_topic_score_codex":0.00020795625,"about_ca_topic_score_gemma":0.000431707,"teacher_disagreement_score":0.0036386114,"about_ca_system_score_codex":0.000406963,"about_ca_system_score_gemma":0.00014326793,"threshold_uncertainty_score":0.012172401},"labels":[],"label_agreement":null},{"id":"W2165443356","doi":"10.1109/ted.2003.812481","title":"Static characteristics of a-Si:H dual-gate TFTs","year":2003,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":52,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Thin-film transistor; Materials science; Threshold voltage; Subthreshold conduction; Optoelectronics; Transistor; Logic gate; Electrical engineering; Amorphous silicon; Subthreshold slope; Voltage; Dual (grammatical number); Leakage (economics); Silicon; Nanotechnology; Engineering; Crystalline silicon","score_opus":0.008200221896869706,"score_gpt":0.20898360732042048,"score_spread":0.2007833854235508,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2165443356","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99605185,0.0006425221,0.001624191,0.000059411537,0.00002970417,0.000004863109,0.00028738272,0.000077998906,0.0012221822],"genre_scores_gemma":[0.9985362,0.00016323997,0.0002740683,0.000024013296,0.000015723423,0.0000037058703,0.00015806782,0.000013191786,0.000811842],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998785,0.000007148394,0.000007926887,0.00003044865,0.000046765934,0.00002920376],"domain_scores_gemma":[0.9995703,0.0001810685,0.0000540185,0.000027931655,0.000112667556,0.000054024265],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00011766153,0.0002238091,0.0002597398,0.0002835147,0.00017225149,0.0003155512,0.00022528914,0.00032613744,0.001436315],"category_scores_gemma":[0.00052502076,0.000096419004,0.00015767092,0.00023061663,0.00020455214,0.0004223726,0.00014384517,0.00018136621,0.0003498434],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00028415426,0.000018926921,0.0020409618,0.000064309716,0.000020886751,0.00020965473,0.0000771802,0.0009345705,0.9898065,0.00011376846,0.00017153185,0.0062575494],"study_design_scores_gemma":[0.0000301348,0.0009428147,0.015007085,0.000013118973,0.000068777124,0.0008530059,0.00009715283,0.011377963,0.96999174,0.00016417314,0.0014328246,0.0000210683],"about_ca_topic_score_codex":0.00075788744,"about_ca_topic_score_gemma":0.00083443365,"teacher_disagreement_score":0.001436315,"about_ca_system_score_codex":0.00029141005,"about_ca_system_score_gemma":0.00011683364,"threshold_uncertainty_score":0.004804969},"labels":[],"label_agreement":null},{"id":"W2166055435","doi":"10.1109/led.2008.2000857","title":"Charge-Gated Thin-Film Transistors for High Resolution Digital Imaging Applications","year":2008,"lang":"en","type":"article","venue":"IEEE Electron Device Letters","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Thin-film transistor; Transistor; Optoelectronics; Materials science; Amplifier; Logic gate; Electrical engineering; Threshold voltage; Voltage; Static induction transistor; Gate dielectric; CMOS; Engineering; Nanotechnology","score_opus":0.008529538439310473,"score_gpt":0.19745874396033877,"score_spread":0.1889292055210283,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2166055435","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.6746072,0.027908066,0.27225414,0.0015341428,0.0007762325,0.00023150045,0.0009107556,0.0022882784,0.019489683],"genre_scores_gemma":[0.8928608,0.0054328907,0.09750154,0.00024220477,0.00010827368,0.000054061125,0.0002133104,0.000047308844,0.0035396435],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99994683,0.000006225954,0.0000026472167,0.000008813173,0.000028894663,0.0000066010452],"domain_scores_gemma":[0.999894,0.000044520915,0.000016184891,0.000010266886,0.000024457273,0.000010579627],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00012268721,0.0002609342,0.00018307797,0.000156243,0.00015210726,0.00037603732,0.00042708716,0.0003556225,0.0011866286],"category_scores_gemma":[0.0002874586,0.00012199369,0.00011479186,0.00023667495,0.00019530488,0.0003864053,0.000093418035,0.00031435044,0.00032725092],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00004270245,0.00001278102,0.00023211818,0.00012558911,0.000007636934,0.00012333441,0.000023205985,0.00063690613,0.98227227,0.0022512004,0.0006371539,0.0136351045],"study_design_scores_gemma":[0.000039244776,0.00044430164,0.0015807421,0.00003467186,0.000054404092,0.00090450153,0.000026915162,0.019145915,0.96064085,0.0017426171,0.015366726,0.00001914063],"about_ca_topic_score_codex":0.00046703455,"about_ca_topic_score_gemma":0.0011041099,"teacher_disagreement_score":0.0011866286,"about_ca_system_score_codex":0.00029396583,"about_ca_system_score_gemma":0.00017351288,"threshold_uncertainty_score":0.003969729},"labels":[],"label_agreement":null},{"id":"W2166410113","doi":"10.1139/cjp-2013-0563","title":"Charge carrier transport in boron doped poly-Si","year":2014,"lang":"en","type":"article","venue":"Canadian Journal of Physics","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":false,"route_ca_venue":true,"route_about_ca":false,"ca_institutions":"","funders":"Bundesministerium für Umwelt, Naturschutz und Reaktorsicherheit","keywords":"Charge carrier; Doping; Thermionic emission; Boron; Analytical Chemistry (journal); Substrate (aquarium); Activation energy; Arrhenius equation; Conductivity; Scattering; Electrical resistivity and conductivity; Silicon; Condensed matter physics; Materials science; Physics; Optoelectronics; Chemistry; Physical chemistry; Optics","score_opus":0.007501212233934704,"score_gpt":0.1759827615833268,"score_spread":0.16848154934939208,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2166410113","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99668497,0.0007958918,0.0007552198,0.000047296784,0.000017011245,0.000006832736,0.00012210985,0.000023683275,0.0015469792],"genre_scores_gemma":[0.9974632,0.00050440186,0.0008370122,0.000011304262,0.0000037378243,0.000006923501,0.0001503144,0.0000063192506,0.0010168831],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.999899,0.000008719721,0.0000049525843,0.000022728287,0.00004173835,0.00002283296],"domain_scores_gemma":[0.9998791,0.000040636478,0.000022545399,0.000009801182,0.000035960573,0.000011867985],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00011672273,0.00021688253,0.00017952043,0.00019689738,0.00026906046,0.00047977467,0.00029123426,0.0002791561,0.0012023024],"category_scores_gemma":[0.0002346581,0.00013172984,0.00009856553,0.0002383428,0.00022968929,0.00030347295,0.00012625456,0.00022102386,0.00027613368],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00012306875,0.000027667755,0.00044392748,0.0000780365,0.00000904275,0.00014201824,0.00006847783,0.002003318,0.994932,0.00056402915,0.0001174719,0.001490944],"study_design_scores_gemma":[0.000032676187,0.00037422244,0.0035209921,0.000033448974,0.000016665028,0.00012863713,0.00010386729,0.03462972,0.9591473,0.0002551766,0.0017377677,0.00001946523],"about_ca_topic_score_codex":0.0045096856,"about_ca_topic_score_gemma":0.0053458847,"teacher_disagreement_score":0.0045096856,"about_ca_system_score_codex":0.0007635214,"about_ca_system_score_gemma":0.0002580256,"threshold_uncertainty_score":0.008966863},"labels":[],"label_agreement":null},{"id":"W2166595683","doi":"10.1557/proc-609-a12.2","title":"ITO/a-SiN<sub>x</sub>:H/a-Si:H Photodiode with Enhanced Photosensitivity and Reduced Leakage Current Using Polycrystalline ITO Deposited at Room Temperature","year":2000,"lang":"en","type":"article","venue":"MRS Proceedings","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":3,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"PerkinElmer Biosignal; University of Waterloo","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Materials science; Photodiode; Optoelectronics; Photosensitivity; Dark current; Schottky barrier; Crystallite; Schottky diode; Analytical Chemistry (journal); Photodetector","score_opus":0.006724828992361277,"score_gpt":0.19024974752556834,"score_spread":0.18352491853320707,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2166595683","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9923264,0.00041041168,0.004021404,0.00007781062,0.00005635876,0.000041104915,0.00027359734,0.00034583008,0.0024471546],"genre_scores_gemma":[0.98287255,0.0002493424,0.011290669,0.00005779805,0.000024691302,0.000036116293,0.00024488842,0.00011897452,0.0051049064],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998692,0.000009905446,0.000008021851,0.00004360612,0.000040195988,0.000029106173],"domain_scores_gemma":[0.999881,0.000024014973,0.000025162411,0.000024449702,0.000026221198,0.000019065743],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00018152989,0.00033614377,0.00030510448,0.00018909165,0.0001917042,0.00040416062,0.00061626016,0.0005717768,0.0015001048],"category_scores_gemma":[0.0002204436,0.00029538205,0.0001923762,0.00033293644,0.0003080736,0.0003691764,0.00017796813,0.0003465662,0.0004287942],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000073726354,0.000013210845,0.00011731445,0.00002574271,0.000008680971,0.000075629774,0.0000154526,0.000022633156,0.9985714,0.000059102593,0.00009779039,0.0009193283],"study_design_scores_gemma":[0.00003294926,0.00013460136,0.0022720965,0.000002439718,0.000016881866,0.00015830177,0.000012515173,0.00049436645,0.99598145,0.000018712486,0.00087081135,0.0000049331197],"about_ca_topic_score_codex":0.000857343,"about_ca_topic_score_gemma":0.0021014202,"teacher_disagreement_score":0.0015001048,"about_ca_system_score_codex":0.00029443033,"about_ca_system_score_gemma":0.00019007754,"threshold_uncertainty_score":0.0050183535},"labels":[],"label_agreement":null},{"id":"W2168123177","doi":"10.1109/led.2008.2001634","title":"UV-Enhanced a-Si:H Metal–Semiconductor–Metal Photodetector","year":2008,"lang":"en","type":"article","venue":"IEEE Electron Device Letters","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":16,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Responsivity; Photodetector; Materials science; Optoelectronics; Electrode; Silicon; Ultraviolet; Quantum efficiency; Semiconductor; Amorphous silicon; Aluminium; Metal; Chemistry; Crystalline silicon; Metallurgy","score_opus":0.013748838793684073,"score_gpt":0.20398555418148862,"score_spread":0.19023671538780454,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2168123177","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9479643,0.0011237118,0.0403261,0.00023405127,0.00010337256,0.000046482746,0.00076730235,0.0019700702,0.0074645435],"genre_scores_gemma":[0.97467506,0.00024236867,0.020726588,0.0000888766,0.000027724187,0.000013980699,0.00011321747,0.00001829363,0.004093817],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998524,0.0000143613315,0.00000474297,0.00004671769,0.00006013625,0.000021573082],"domain_scores_gemma":[0.9998925,0.000029630306,0.0000174034,0.000011406834,0.000036246074,0.000012875846],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00014637657,0.00016930887,0.0002601604,0.00018149649,0.000140132,0.00031020184,0.0005264891,0.00034617522,0.0014293622],"category_scores_gemma":[0.00018675049,0.00012420262,0.0001299349,0.00027222,0.00016549112,0.0002573176,0.00018988755,0.00020800602,0.0007019951],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00010945404,0.000028200771,0.00045154447,0.000031891177,0.000011292413,0.000080026985,0.000017417491,0.00025587543,0.99148285,0.00039881942,0.000514778,0.0066177817],"study_design_scores_gemma":[0.000015126501,0.00015663753,0.0013404489,0.0000035078467,0.000013542922,0.00021107294,0.000013006276,0.008069372,0.98693466,0.00009572404,0.003139073,0.000007772915],"about_ca_topic_score_codex":0.00049277383,"about_ca_topic_score_gemma":0.0009459096,"teacher_disagreement_score":0.0014293622,"about_ca_system_score_codex":0.00032026804,"about_ca_system_score_gemma":0.00015961792,"threshold_uncertainty_score":0.0047816634},"labels":[],"label_agreement":null},{"id":"W2168349988","doi":"10.5539/mas.v8n4p8","title":"Random-Texturing of Phosphorus-Doped Layers for Multi-Crystalline Si Solar Cells by Plasmaless Dry Etching","year":2014,"lang":"en","type":"article","venue":"Modern Applied Science","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":false,"route_ca_venue":true,"route_about_ca":false,"ca_institutions":"","funders":"","keywords":"Materials science; Dry etching; Crystalline silicon; Etching (microfabrication); Doping; Solar cell; Chemical engineering; Optoelectronics; Composite material; Layer (electronics)","score_opus":0.012720149444629129,"score_gpt":0.21203562468294168,"score_spread":0.19931547523831256,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2168349988","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.96977276,0.00090280705,0.027013853,0.00008080698,0.000065923676,0.000077501856,0.00025051093,0.0003313187,0.0015045141],"genre_scores_gemma":[0.9658871,0.0004570464,0.032072764,0.000032905045,0.00001536254,0.00004767604,0.0001654719,0.000082561244,0.0012391582],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998679,0.0000087240915,0.000013106657,0.000036723563,0.000055744666,0.000017674667],"domain_scores_gemma":[0.99981827,0.000049186277,0.0000472295,0.000046728077,0.000029542196,0.000009141548],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00013795831,0.00027540277,0.00023127678,0.00019197876,0.00013738542,0.00030601717,0.00037809505,0.00026333245,0.00082391396],"category_scores_gemma":[0.0003104154,0.0002261623,0.0002554644,0.00014929275,0.00017061312,0.00029570158,0.00019254998,0.00040390465,0.00029111683],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000009515109,0.0000061956816,0.0000770445,0.00003971471,0.0000041323024,0.000034747616,0.000010032721,0.0002106196,0.99794906,0.000059650407,0.000031799413,0.0015674469],"study_design_scores_gemma":[0.0000060767434,0.000053489955,0.00040529438,0.0000015812784,0.0000051820934,0.00008901608,0.0000048565566,0.0011178446,0.99767774,0.000019515786,0.00061616197,0.0000032168678],"about_ca_topic_score_codex":0.00018635686,"about_ca_topic_score_gemma":0.00045237536,"teacher_disagreement_score":0.00082391396,"about_ca_system_score_codex":0.00014334677,"about_ca_system_score_gemma":0.00012959004,"threshold_uncertainty_score":0.0027562976},"labels":[],"label_agreement":null},{"id":"W2168890142","doi":"10.1557/opl.2011.952","title":"Thin-film Photodiode with an a-Si:H/nc-Si:H Absorption Bilayer","year":2011,"lang":"en","type":"article","venue":"MRS Proceedings","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"University of Waterloo","keywords":"Materials science; Photodiode; Optoelectronics; Dark current; Amorphous silicon; Ultraviolet; Bilayer; Quantum efficiency; Silicon; Biasing; Optics; Photodetector; Crystalline silicon; Voltage","score_opus":0.020415411188814653,"score_gpt":0.1954254272897691,"score_spread":0.17501001610095446,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2168890142","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9863739,0.0006575802,0.0062043294,0.0005502577,0.00018720601,0.000069988004,0.0005890474,0.0004816974,0.004885981],"genre_scores_gemma":[0.9809372,0.00031151553,0.0137522835,0.00020075549,0.00004282781,0.00006080387,0.00018910183,0.00005467182,0.004450792],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99981207,0.000015448448,0.00001192414,0.000066311426,0.00005763979,0.000036535253],"domain_scores_gemma":[0.99972385,0.00007109427,0.000030132216,0.00005728526,0.00007192044,0.000045755234],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00037140527,0.00040665138,0.00046214918,0.00033224205,0.00061836,0.0006743248,0.0010226347,0.001090296,0.002491731],"category_scores_gemma":[0.0003709895,0.00043050828,0.00027444237,0.00043081224,0.00040793716,0.00069396873,0.00042789118,0.00066271576,0.0007271681],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00011589894,0.000016607655,0.00021254696,0.000026896641,0.00001118998,0.000091605645,0.000025281228,0.000028472607,0.9983924,0.00013135449,0.00023438255,0.000713265],"study_design_scores_gemma":[0.000050550534,0.000165709,0.0022818455,0.000010731897,0.000023403183,0.00022024573,0.000068999245,0.0014317886,0.9932359,0.00009090649,0.00240668,0.000013200623],"about_ca_topic_score_codex":0.0016614414,"about_ca_topic_score_gemma":0.0031689915,"teacher_disagreement_score":0.002491731,"about_ca_system_score_codex":0.00065127254,"about_ca_system_score_gemma":0.00039221018,"threshold_uncertainty_score":0.00833571},"labels":[],"label_agreement":null},{"id":"W2169002838","doi":"10.1109/pvsc.2009.5411414","title":"MOdeling of SI-based thin film triple-junction solar cells","year":2009,"lang":"en","type":"article","venue":"","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":8,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Crosslight Software (Canada)","funders":"","keywords":"Materials science; Microcrystalline; Amorphous solid; Optoelectronics; Thin film; Triple junction; Absorption (acoustics); Finite-difference time-domain method; Solar cell; Quantum efficiency; Layer (electronics); Optics; Nanotechnology; Composite material; Crystallography; Chemistry; Physics","score_opus":0.011194568351362526,"score_gpt":0.1904474214304052,"score_spread":0.17925285307904265,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2169002838","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.5838541,0.001715823,0.34568843,0.00035208953,0.0001405238,0.00018912503,0.002539768,0.0012105751,0.06430961],"genre_scores_gemma":[0.9596533,0.0012833185,0.01956731,0.000070623115,0.000024951984,0.00021620879,0.0006799174,0.000106476866,0.018397827],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9999163,0.000011561079,0.000004147692,0.000017735298,0.000036753194,0.000013468328],"domain_scores_gemma":[0.99992836,0.00002093518,0.000008868073,0.000008120566,0.00002686972,0.0000069290577],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00008652926,0.0004043722,0.0005979845,0.00022380824,0.0002934671,0.0007769209,0.0012509688,0.000916974,0.0025631837],"category_scores_gemma":[0.00020731361,0.0003246574,0.0006381344,0.00039743428,0.00024818868,0.0005543906,0.00024116336,0.00038706354,0.0007336973],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000024757135,0.000018024963,0.00036492076,0.00005864008,0.000024922625,0.00017774313,0.000046899135,0.97432387,0.019315792,0.0027216494,0.00025449315,0.0026683437],"study_design_scores_gemma":[0.0000034078244,0.00001860986,0.00024192211,0.0000053875738,0.000009883802,0.000032586187,0.000012809657,0.99566746,0.0027801057,0.0004293938,0.00079395337,0.00000448569],"about_ca_topic_score_codex":0.008502326,"about_ca_topic_score_gemma":0.0058371266,"teacher_disagreement_score":0.008502326,"about_ca_system_score_codex":0.0006256605,"about_ca_system_score_gemma":0.0005789685,"threshold_uncertainty_score":0.016905665},"labels":[],"label_agreement":null},{"id":"W2169093066","doi":"10.1109/pvsc.2012.6317818","title":"Novel process flow and cell architecture for 10 &amp;#x00B5;m thick membrane single-crystalline silicon solar cell","year":2012,"lang":"en","type":"article","venue":"","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":7,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McMaster University","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Passivation; Solar cell; Materials science; Open-circuit voltage; Optoelectronics; Silicon; Photovoltaic system; Photovoltaics; Fabrication; Lithography; Energy conversion efficiency; Nanotechnology; Voltage; Electrical engineering; Layer (electronics)","score_opus":0.017435031546273065,"score_gpt":0.20704067487186076,"score_spread":0.18960564332558769,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2169093066","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.750677,0.0017560372,0.22348934,0.0006020186,0.0005115374,0.0005459681,0.0021872437,0.003630566,0.016600294],"genre_scores_gemma":[0.6471722,0.0015296716,0.33802965,0.00017309975,0.000097527074,0.0006108157,0.0017016415,0.00017398353,0.010511399],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999186,0.0000036629701,0.0000071745108,0.000026477568,0.000031940144,0.000012123678],"domain_scores_gemma":[0.9999567,0.0000055955993,0.000008229054,0.000008063589,0.00001599529,0.000005370402],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000094168514,0.0002491774,0.00027790348,0.00019606165,0.00030140413,0.00048991526,0.00072230306,0.00065894955,0.0016096261],"category_scores_gemma":[0.00009100523,0.00020875428,0.0002409342,0.0002496935,0.00011279415,0.0004034569,0.00019791831,0.0006645312,0.0012882046],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000014966179,0.000027178827,0.00009178438,0.00003142458,0.0000025267475,0.000046134173,0.000011943919,0.00027393887,0.99395186,0.00047718096,0.00019928148,0.0048718895],"study_design_scores_gemma":[0.000020998672,0.00017017355,0.0014719486,0.000008163657,0.00001351966,0.0002748672,0.000021438456,0.009582862,0.9757756,0.00019492081,0.012446079,0.00001937764],"about_ca_topic_score_codex":0.000892565,"about_ca_topic_score_gemma":0.0014491541,"teacher_disagreement_score":0.0016096261,"about_ca_system_score_codex":0.00040187617,"about_ca_system_score_gemma":0.00050205743,"threshold_uncertainty_score":0.005384743},"labels":[],"label_agreement":null},{"id":"W2169942117","doi":"10.1557/opl.2011.1330","title":"Thin Film Power Harvesting System for Displays","year":2011,"lang":"en","type":"article","venue":"MRS Proceedings","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"IGNIS Innovation (Canada)","funders":"","keywords":"Materials science; Thin-film transistor; Optoelectronics; Amorphous silicon; Voltage; Transistor; Photovoltaic system; Thin film; Range (aeronautics); Engineering physics; Electrical engineering; Silicon; Nanotechnology; Crystalline silicon; Composite material; Engineering","score_opus":0.019680294887930227,"score_gpt":0.18960393067224265,"score_spread":0.16992363578431244,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2169942117","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.511362,0.010109538,0.3552592,0.0040401667,0.0027223313,0.00044851116,0.002439498,0.0067652254,0.10685355],"genre_scores_gemma":[0.8426947,0.003268122,0.067757756,0.0006782693,0.00033139173,0.00018221671,0.0008332567,0.0004286692,0.08382559],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999435,0.0000042763863,0.0000027097494,0.000014603588,0.000026991762,0.000007904573],"domain_scores_gemma":[0.99990857,0.000018067803,0.000007872078,0.000015773241,0.000040410505,0.000009323731],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00008516528,0.00029651573,0.00032174558,0.00030909627,0.00048099112,0.00071168767,0.0006428224,0.00042448728,0.008591961],"category_scores_gemma":[0.00020109734,0.0002336969,0.0002454879,0.00047718795,0.0001429317,0.0007869228,0.00032639378,0.0005939509,0.0022201552],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00006356248,0.00003278738,0.00017913488,0.00013867785,0.00002609853,0.00013916873,0.000068544934,0.0003043742,0.96194494,0.0027430018,0.006177413,0.028182235],"study_design_scores_gemma":[0.00003869637,0.0002426554,0.0023157697,0.000056222347,0.00008570097,0.0005372482,0.00010598261,0.016632162,0.9351811,0.0022650068,0.042501193,0.000038305807],"about_ca_topic_score_codex":0.00038501556,"about_ca_topic_score_gemma":0.00084791763,"teacher_disagreement_score":0.008591961,"about_ca_system_score_codex":0.00026099765,"about_ca_system_score_gemma":0.00020632273,"threshold_uncertainty_score":0.02874291},"labels":[],"label_agreement":null},{"id":"W2170700498","doi":"10.1109/16.974742","title":"Preparation of thin-film transistors with chemical bath deposited CdSe and CdS thin films","year":2002,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":80,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McGill University","funders":"","keywords":"Thin-film transistor; Threshold voltage; Subthreshold slope; Materials science; Optoelectronics; Subthreshold conduction; Transistor; Field effect; Thin film; Chemical bath deposition; Electron mobility; Semiconductor; Voltage; Analytical Chemistry (journal); Layer (electronics); Electrical engineering; Nanotechnology; Chemistry; Band gap","score_opus":0.007447771377316327,"score_gpt":0.2084867310704171,"score_spread":0.20103895969310076,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2170700498","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.873885,0.0075296373,0.1047371,0.0005585083,0.0006351887,0.00078367145,0.003054801,0.0008571479,0.007959078],"genre_scores_gemma":[0.846198,0.0061130743,0.137677,0.00023583366,0.0001019893,0.000542383,0.0023852133,0.00013487648,0.0066115833],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.999933,0.0000064574647,0.000008226975,0.000018004395,0.000024823257,0.000009568246],"domain_scores_gemma":[0.99987316,0.00004782633,0.000012482408,0.000017045231,0.000032761178,0.000016610824],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00015385625,0.00035928766,0.00026897347,0.0002526688,0.0002760573,0.00023525265,0.00039774072,0.00036860703,0.0014186862],"category_scores_gemma":[0.00043420418,0.00025834906,0.00022527133,0.00026256632,0.00022482437,0.0002318075,0.00010254529,0.00045526316,0.00052720576],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00001561496,0.000007600369,0.000056466313,0.000052427644,0.0000048371367,0.000037365724,0.000010550177,0.00011629174,0.99826944,0.000102977116,0.00007086245,0.0012555084],"study_design_scores_gemma":[0.000012513665,0.000048235346,0.00027591726,0.0000046250075,0.000015343603,0.000051481635,0.000008626555,0.0005705877,0.99699795,0.00006558017,0.0019462152,0.0000030036401],"about_ca_topic_score_codex":0.00071746,"about_ca_topic_score_gemma":0.0016165322,"teacher_disagreement_score":0.0014186862,"about_ca_system_score_codex":0.00024953758,"about_ca_system_score_gemma":0.0002268006,"threshold_uncertainty_score":0.0047459602},"labels":[],"label_agreement":null},{"id":"W2171950035","doi":"10.1139/cjp-2013-0582","title":"Effect of hydrogen concentration on structure and photoelectric properties of a-Si:H films modified by femtosecond laser pulses","year":2014,"lang":"en","type":"article","venue":"Canadian Journal of Physics","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":5,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":false,"route_ca_venue":true,"route_about_ca":false,"ca_institutions":"","funders":"","keywords":"Femtosecond; Crystallization; Laser; Materials science; Hydrogen; Silicon; Amorphous silicon; Photoelectric effect; Photoconductivity; Crystalline silicon; Amorphous solid; Optoelectronics; Chemical engineering; Analytical Chemistry (journal); Optics; Crystallography; Physics; Chemistry; Organic chemistry","score_opus":0.005038382258741078,"score_gpt":0.1639538975257542,"score_spread":0.15891551526701314,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2171950035","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9986387,0.00047626568,0.00018619216,0.000029956325,0.000010895936,0.000005107017,0.00008681089,0.000014261349,0.00055172463],"genre_scores_gemma":[0.99855345,0.00033191568,0.00036016773,0.000017045053,0.0000042942793,0.00000831396,0.0000838851,0.000013766852,0.0006271626],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99991345,0.0000067058722,0.0000055602914,0.000020116035,0.000028627837,0.00002550913],"domain_scores_gemma":[0.99984837,0.00005479991,0.00003395391,0.000011837915,0.00003247493,0.000018528344],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00009522594,0.00021874078,0.0001644802,0.00014798656,0.00015722339,0.00026732983,0.00021791249,0.00032422683,0.0013318781],"category_scores_gemma":[0.00022116679,0.00022072734,0.00016926302,0.0002013675,0.0001695651,0.00020917607,0.00009562523,0.00039666175,0.00014648911],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00007369543,0.000012351041,0.00015322168,0.000022977196,0.0000076050624,0.000041481606,0.000027951899,0.00007567849,0.99910307,0.000016410666,0.000019613217,0.0004459021],"study_design_scores_gemma":[0.000006799871,0.000096781565,0.0018617365,0.0000024224562,0.0000065858417,0.000023421539,0.000023882987,0.00038194985,0.9974088,0.000005734765,0.00017947552,0.000002527778],"about_ca_topic_score_codex":0.0013372399,"about_ca_topic_score_gemma":0.0017797642,"teacher_disagreement_score":0.0013372399,"about_ca_system_score_codex":0.00028391043,"about_ca_system_score_gemma":0.00011374853,"threshold_uncertainty_score":0.004455507},"labels":[],"label_agreement":null},{"id":"W2176717729","doi":"10.1139/cjp-2013-0610","title":"Dependence of open circuit voltage in a-Si:H and μc-Si:H solar cells on defect density in absorber layer varied by 2 MeV electron bombardment","year":2014,"lang":"en","type":"article","venue":"Canadian Journal of Physics","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":2,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":false,"route_ca_venue":true,"route_about_ca":false,"ca_institutions":"","funders":"Bundesministerium für Bildung und Forschung","keywords":"Open-circuit voltage; Physics; Electron; Solar cell; Electron density; Silicon; Annealing (glass); Recombination; Current density; Molecular physics; Analytical Chemistry (journal); Optoelectronics; Atomic physics; Voltage; Chemistry","score_opus":0.011300422419387833,"score_gpt":0.199204780488881,"score_spread":0.18790435806949315,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2176717729","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99844766,0.0002542399,0.00065117853,0.000023863626,0.000006630571,0.0000045280603,0.00022223298,0.00003298083,0.00035663845],"genre_scores_gemma":[0.9987404,0.00020039495,0.00047479942,0.0000145311315,0.000003280122,0.000012145339,0.00019836953,0.000010675786,0.00034542324],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9997985,0.000018500476,0.000017047209,0.000054905926,0.00007060873,0.000040515413],"domain_scores_gemma":[0.9994955,0.00029947291,0.000060000864,0.000040905998,0.000061719154,0.00004230144],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00019716246,0.00028879143,0.00029180595,0.00020570868,0.00012649459,0.0003512562,0.00042824418,0.00044014724,0.001117921],"category_scores_gemma":[0.00041945314,0.00014869224,0.00015975069,0.00028555168,0.0002518669,0.00027684067,0.00018568675,0.00042585554,0.00014655756],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00016393475,0.000041352225,0.0014337443,0.000045698464,0.0000202818,0.00009880352,0.0000747383,0.00087080454,0.99472445,0.000069234244,0.00005762433,0.002399375],"study_design_scores_gemma":[0.000007979868,0.0002873572,0.010169812,0.000005020663,0.00001511021,0.00007604991,0.000051668456,0.0044894298,0.98456,0.000065836306,0.00026368297,0.0000080553655],"about_ca_topic_score_codex":0.00071745185,"about_ca_topic_score_gemma":0.0008363533,"teacher_disagreement_score":0.001117921,"about_ca_system_score_codex":0.00032296352,"about_ca_system_score_gemma":0.00009642535,"threshold_uncertainty_score":0.0037397742},"labels":[],"label_agreement":null},{"id":"W2177049020","doi":"10.1016/j.tsf.2015.11.055","title":"Study of deposition temperature on high crystallinity nanocrystalline silicon thin films with in-situ hydrogen plasma-passivated grains","year":2015,"lang":"en","type":"article","venue":"Thin Solid Films","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":12,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Plasma-enhanced chemical vapor deposition; Materials science; Passivation; Nanocrystalline material; Deposition (geology); Thin film; Crystallinity; Chemical vapor deposition; Analytical Chemistry (journal); Nanocrystalline silicon; Silicon; Chemical engineering; Layer (electronics); Crystalline silicon; Nanotechnology; Amorphous silicon; Metallurgy; Composite material; Chemistry","score_opus":0.0161282441700008,"score_gpt":0.22493528744943123,"score_spread":0.20880704327943042,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2177049020","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99712545,0.00049671077,0.0006317508,0.00004112565,0.00001836531,0.000008272102,0.0001618173,0.000022544433,0.0014939124],"genre_scores_gemma":[0.99804485,0.0002763867,0.0005521043,0.000009683999,0.000007472667,0.000006989433,0.000110393645,0.00002307394,0.0009690254],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99990094,0.000004997749,0.000004215697,0.000030037814,0.000036950034,0.000022887985],"domain_scores_gemma":[0.99985075,0.000052793646,0.000028688628,0.000017392304,0.000042037005,0.000008190915],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00008564073,0.00016270569,0.0002776326,0.00011631374,0.000288263,0.00028027964,0.0003012846,0.00020507924,0.0021238856],"category_scores_gemma":[0.00025185058,0.00021950525,0.00019792396,0.00019028899,0.0002039175,0.00026182662,0.0001182851,0.00028806872,0.00023507733],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00012649219,0.00001339915,0.0004584209,0.00008962337,0.000011707426,0.000069206515,0.00006225454,0.000192704,0.99806637,0.00009846,0.00008453804,0.0007269206],"study_design_scores_gemma":[0.000010837506,0.00010061205,0.005308748,0.0000052609457,0.000016436312,0.000056622837,0.00005546726,0.0014422867,0.992278,0.000024126795,0.0006976462,0.0000039735155],"about_ca_topic_score_codex":0.0026497962,"about_ca_topic_score_gemma":0.0033262875,"teacher_disagreement_score":0.0026497962,"about_ca_system_score_codex":0.0005095828,"about_ca_system_score_gemma":0.00019157135,"threshold_uncertainty_score":0.007105112},"labels":[],"label_agreement":null},{"id":"W2179520480","doi":"10.1063/1.4935979","title":"Photosensitivity enhancement in hydrogenated amorphous silicon thin-film phototransistors with gate underlap","year":2015,"lang":"en","type":"article","venue":"Applied Physics Letters","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":9,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"National Research Foundation of Korea","keywords":"Photosensitivity; Photocurrent; Optoelectronics; Photodetector; Photodiode; Materials science; Dark current; Silicon; Photoconductivity; Amorphous silicon; Wavelength; Optics; Physics; Crystalline silicon","score_opus":0.01286289252468811,"score_gpt":0.18678339030347466,"score_spread":0.17392049777878654,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2179520480","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9994771,0.00009065182,0.00019338702,0.00000941385,0.0000034643906,0.0000014531889,0.000020096099,0.000016988084,0.00018737242],"genre_scores_gemma":[0.9993325,0.000090247115,0.0003184166,0.000006927122,0.0000027835788,0.0000019975012,0.000022521772,0.00000431923,0.00022030278],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999552,0.0000041145736,0.0000030215351,0.000010341216,0.000012217301,0.000015219881],"domain_scores_gemma":[0.9998969,0.00003466641,0.00002676961,0.0000105937315,0.000014128457,0.00001679549],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000060787934,0.00012842828,0.00012241588,0.000096503354,0.000070115464,0.00020654986,0.00016489602,0.0001318442,0.00043037118],"category_scores_gemma":[0.00014101077,0.00010713522,0.00010061244,0.00010584721,0.0001623748,0.00019295396,0.0001366122,0.00016410813,0.00007761764],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000038348022,0.0000072154266,0.0003818477,0.000009853604,0.0000038118003,0.00008227833,0.000015698275,0.00009495536,0.9988034,0.000025179294,0.00001759294,0.0005197942],"study_design_scores_gemma":[0.0000044110375,0.000085568885,0.003913856,0.0000017981864,0.000008579339,0.00008933067,0.000013991949,0.0014116996,0.99426043,0.0000181018,0.00019010757,0.0000022214253],"about_ca_topic_score_codex":0.00047821502,"about_ca_topic_score_gemma":0.00091762684,"teacher_disagreement_score":0.00047821502,"about_ca_system_score_codex":0.00021130955,"about_ca_system_score_gemma":0.000094970936,"threshold_uncertainty_score":0.0015332103},"labels":[],"label_agreement":null},{"id":"W2197113256","doi":"10.1557/proc-762-a20.4","title":"Threshold Voltage Performance of a-Si:H TFTs for Analog Applications","year":2003,"lang":"en","type":"article","venue":"MRS Proceedings","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":2,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"AMOLED; Materials science; Thin-film transistor; Active matrix; Threshold voltage; Optoelectronics; Transistor; Amplifier; OLED; Amorphous silicon; Biasing; Electronic circuit; Voltage; Diode; Electrical engineering; Silicon; CMOS; Nanotechnology; Crystalline silicon","score_opus":0.011393214500755627,"score_gpt":0.20472915267267036,"score_spread":0.19333593817191475,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2197113256","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9937628,0.0009862392,0.0014567598,0.00019719538,0.000059848364,0.000010636396,0.0004836448,0.00017277514,0.002870176],"genre_scores_gemma":[0.9974049,0.00018126339,0.0004572873,0.00003280242,0.000021353168,0.0000052302694,0.00017999555,0.00001558765,0.0017015742],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998636,0.000009808792,0.000008381748,0.00003069198,0.000040247316,0.000047274727],"domain_scores_gemma":[0.99963486,0.00014838921,0.000031186253,0.000024575958,0.0001090133,0.000051935247],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00017024924,0.00022277462,0.00021140912,0.00027506187,0.00029470358,0.00044259362,0.00048624916,0.00071143406,0.00448208],"category_scores_gemma":[0.0006425039,0.00011121254,0.00013163316,0.00029818466,0.00018295931,0.00045903737,0.00014301432,0.00026499422,0.0009191603],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0009547445,0.000058253514,0.0015641542,0.000085132466,0.00002012654,0.00016645252,0.00012340574,0.0015529449,0.9853114,0.00040011693,0.0011487954,0.008614584],"study_design_scores_gemma":[0.00006210164,0.001500174,0.007927856,0.00003263787,0.00004977919,0.0002959436,0.00013530007,0.020629693,0.9667489,0.00044118095,0.0021530243,0.000023423983],"about_ca_topic_score_codex":0.0028766433,"about_ca_topic_score_gemma":0.0036328663,"teacher_disagreement_score":0.00448208,"about_ca_system_score_codex":0.00055607135,"about_ca_system_score_gemma":0.00026064253,"threshold_uncertainty_score":0.014994085},"labels":[],"label_agreement":null},{"id":"W2197618443","doi":"10.1002/ppap.201500182","title":"Hydrogenated Silicon Nitride SiN<i><sub>x</sub></i>:H Deposited by Dielectric Barrier Discharge for Photovoltaics","year":2015,"lang":"en","type":"article","venue":"Plasma Processes and Polymers","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":16,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Université Laval","funders":"Agence de l'Environnement et de la Maîtrise de l'Energie; Air Liquide","keywords":"Plasma-enhanced chemical vapor deposition; Materials science; Silicon nitride; Passivation; Photovoltaics; Chemical vapor deposition; Optoelectronics; Dielectric barrier discharge; Thin film; Silicon; Plasma; Nitride; Nanotechnology; Dielectric; Layer (electronics); Photovoltaic system; Electrical engineering","score_opus":0.008807950777598064,"score_gpt":0.19201535946483586,"score_spread":0.18320740868723778,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2197618443","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9833524,0.0021424533,0.008787447,0.0000825518,0.000077146666,0.00004016552,0.00028368132,0.00016059114,0.005073649],"genre_scores_gemma":[0.98708725,0.0016639947,0.007548937,0.00004012597,0.000014078812,0.000019658097,0.0002635573,0.00003794792,0.003324386],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99994445,0.000004199148,0.000002061046,0.000012124616,0.000027680673,0.000009560055],"domain_scores_gemma":[0.9999362,0.000019399105,0.00001141087,0.00000902476,0.000015231892,0.000008665332],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00008049572,0.00018373936,0.00026208084,0.00010495381,0.00015154976,0.00026443164,0.000279473,0.00018991216,0.0012936834],"category_scores_gemma":[0.000119917975,0.00019203605,0.00014253648,0.0001436878,0.00021986551,0.00026377547,0.00020347779,0.00034194285,0.00043358727],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000019784511,0.0000072282405,0.00020313896,0.000049629984,0.000007183689,0.00005333968,0.000013243734,0.00013422556,0.9962297,0.000113957685,0.00008601708,0.0030825527],"study_design_scores_gemma":[0.000008112907,0.00009692537,0.0026980045,0.000004527695,0.000012107626,0.00015396408,0.00003017377,0.00086889556,0.99367565,0.00007941038,0.0023691808,0.0000030904744],"about_ca_topic_score_codex":0.00026569804,"about_ca_topic_score_gemma":0.0005466025,"teacher_disagreement_score":0.0012936834,"about_ca_system_score_codex":0.00014858464,"about_ca_system_score_gemma":0.0001166583,"threshold_uncertainty_score":0.0043278337},"labels":[],"label_agreement":null},{"id":"W2201471950","doi":"10.1088/0953-8984/27/29/295801","title":"Understanding subtle changes in medium-range order in amorphous silicon","year":2015,"lang":"en","type":"article","venue":"Journal of Physics Condensed Matter","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":5,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Regroupement Québécois sur les Matériaux de Pointe; Université de Montréal","funders":"Natural Sciences and Engineering Research Council of Canada; Fonds Québécois de la Recherche sur la Nature et les Technologies","keywords":"Amorphous silicon; Silicon; Materials science; Order (exchange); Range (aeronautics); Amorphous solid; Nanotechnology; Chemistry; Optoelectronics; Crystalline silicon; Crystallography; Business; Composite material","score_opus":0.0728303810440171,"score_gpt":0.23529070849819578,"score_spread":0.16246032745417868,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2201471950","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9735352,0.00029805087,0.024148352,0.00006453214,0.000003945081,0.000009664458,0.00007773639,0.000091444424,0.0017711502],"genre_scores_gemma":[0.99810505,0.00013367191,0.0015957088,0.00000765214,0.0000032307676,0.0000040521363,0.000037846665,0.000007927889,0.00010491199],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999373,0.00001105913,0.000003185057,0.000014550295,0.00002045352,0.00001340165],"domain_scores_gemma":[0.9997689,0.00009298708,0.00006377696,0.000034518347,0.000019123183,0.000020782423],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00017659186,0.00015064352,0.00023111983,0.00043872572,0.00016419469,0.0003120245,0.00030042353,0.00022546708,0.0005162076],"category_scores_gemma":[0.00058753876,0.00014851085,0.00017994545,0.00029517853,0.00039722747,0.00052650593,0.00019367963,0.00029274754,0.00006936562],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00045072622,0.00017894658,0.04975076,0.00029611745,0.000116020376,0.00103197,0.0005265804,0.4128578,0.44539577,0.060157128,0.0007349832,0.028503196],"study_design_scores_gemma":[0.000014126334,0.00018984104,0.041498885,0.000016307995,0.000024399551,0.00031355128,0.00014890694,0.9164842,0.017456874,0.023069851,0.0007442643,0.000038715105],"about_ca_topic_score_codex":0.0013780791,"about_ca_topic_score_gemma":0.0020757765,"teacher_disagreement_score":0.0013780791,"about_ca_system_score_codex":0.00032527206,"about_ca_system_score_gemma":0.00023293034,"threshold_uncertainty_score":0.0027400851},"labels":[],"label_agreement":null},{"id":"W2211021192","doi":"","title":"Role of hydrogen and annealing in enhancement of passivation at the a-Si:H/c-Si interface","year":2010,"lang":"en","type":"other","venue":"Swinburne Research Bank (Swinburne University of Technology)","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Toronto","funders":"","keywords":"Passivation; Annealing (glass); Materials science; Hydrogen; Silicon; Optoelectronics; Forming gas; Chemical engineering; Metallurgy; Nanotechnology; Chemistry","score_opus":0.011554189883053295,"score_gpt":0.23718950048351714,"score_spread":0.22563531060046385,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2211021192","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9968755,0.0017565985,0.00038761875,0.00002597322,0.000014069266,0.000013223245,0.000051929823,0.000021468748,0.00085364736],"genre_scores_gemma":[0.9982476,0.00056548207,0.0005637041,0.000015996668,0.0000062250083,0.000006230496,0.00003929459,0.000009261676,0.0005462519],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99992526,0.000010424636,0.0000054933394,0.00001645019,0.000015199352,0.000027122685],"domain_scores_gemma":[0.9998882,0.000042559765,0.00002579736,0.00000937058,0.000018990606,0.000015214044],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0001396956,0.0001888619,0.00014719185,0.00008064677,0.00007666473,0.0002797049,0.00017857294,0.00024598296,0.0007847247],"category_scores_gemma":[0.00019514964,0.00014136996,0.0001392003,0.00008307266,0.00015344792,0.000192912,0.00010304639,0.00015369746,0.00016591755],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00042852008,0.00004783059,0.00042669944,0.000092541,0.0000116888605,0.000046469257,0.000023069706,0.00020415883,0.9962309,0.000058178382,0.000025592788,0.0024043666],"study_design_scores_gemma":[0.00001657631,0.00036788426,0.0036356552,0.0000046975033,0.00002064183,0.000029999821,0.00001514228,0.00080900587,0.99463284,0.000012624633,0.00045110827,0.0000037744092],"about_ca_topic_score_codex":0.0005977713,"about_ca_topic_score_gemma":0.00076702813,"teacher_disagreement_score":0.0007847247,"about_ca_system_score_codex":0.00015572169,"about_ca_system_score_gemma":0.00013786534,"threshold_uncertainty_score":0.0026251674},"labels":[],"label_agreement":null},{"id":"W2212964827","doi":"10.1557/proc-769-h6.11","title":"Low Temperature Copper-induced Crystallization Technique for Germanium on Flexible PET, by Means of Mechanical Compressive Stress","year":2003,"lang":"en","type":"article","venue":"MRS Proceedings","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":3,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Acadia University; University of Waterloo","funders":"","keywords":"Materials science; Crystallization; Compressive strength; Germanium; Substrate (aquarium); Composite material; Stress (linguistics); Layer (electronics); Raman spectroscopy; Bending; Copper; Amorphous solid; Optoelectronics; Metallurgy; Crystallography; Silicon; Chemical engineering; Optics","score_opus":0.010071324696861273,"score_gpt":0.2191594029456418,"score_spread":0.2090880782487805,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2212964827","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.98317844,0.00088128255,0.010494408,0.000266005,0.00012943418,0.000053112184,0.00018096268,0.00013623494,0.004680242],"genre_scores_gemma":[0.9914517,0.00026836083,0.005504932,0.000027716815,0.00001722508,0.000024070683,0.000084734784,0.00004393162,0.0025773442],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99989116,0.000007395102,0.0000058810915,0.000027100328,0.000041030627,0.000027481401],"domain_scores_gemma":[0.9998932,0.000019580044,0.000022879778,0.00002950105,0.000022498032,0.0000122841175],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00012182013,0.00024648933,0.0003015303,0.0002065593,0.00044504594,0.00030009347,0.0004182834,0.00020000336,0.0008537641],"category_scores_gemma":[0.00018939786,0.00023009082,0.00015899254,0.00021499656,0.00035471472,0.0002896509,0.00038984147,0.0004962809,0.00017841329],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000025197565,0.000007302093,0.00010784814,0.000050149734,0.0000043634655,0.000065996064,0.000048525508,0.00008650747,0.9980033,0.00037727138,0.0001600544,0.0010633313],"study_design_scores_gemma":[0.0000088989045,0.000048794976,0.001051049,0.0000036795955,0.000005778204,0.00010623068,0.000029448262,0.00081117183,0.9964463,0.000045916913,0.0014369687,0.0000057920192],"about_ca_topic_score_codex":0.0016529968,"about_ca_topic_score_gemma":0.0046972577,"teacher_disagreement_score":0.0016529968,"about_ca_system_score_codex":0.00050012104,"about_ca_system_score_gemma":0.00047382317,"threshold_uncertainty_score":0.0036286712},"labels":[],"label_agreement":null},{"id":"W2213015269","doi":"10.1557/proc-769-h6.6","title":"Low Temperature PECVD Silicon Oxide For Devices And Circuits On Flexible Substrates","year":2003,"lang":"en","type":"article","venue":"MRS Proceedings","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":15,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Materials science; Plasma-enhanced chemical vapor deposition; Analytical Chemistry (journal); Dielectric; Silane; Passivation; Wafer; Silicon; Composite material; Layer (electronics); Optoelectronics","score_opus":0.011390193772124588,"score_gpt":0.2073784946134267,"score_spread":0.19598830084130212,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2213015269","genre_codex":"empirical","genre_gemma":"methods","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"methods","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.93387276,0.0072333897,0.033635393,0.0007452902,0.0007278194,0.000105208404,0.00038659098,0.00047745332,0.022816086],"genre_scores_gemma":[0.95973986,0.0020103275,0.02002083,0.00011348687,0.00010041338,0.000043785643,0.0005240473,0.00020678289,0.017240474],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999064,0.000006701427,0.0000037082987,0.000013593244,0.00005159023,0.000018012057],"domain_scores_gemma":[0.99989045,0.00003450931,0.000012783663,0.000021860791,0.000029235598,0.000011171098],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00015932033,0.00026664944,0.0002183757,0.00021723683,0.00035618097,0.000538962,0.00050231034,0.00034229,0.002738976],"category_scores_gemma":[0.00036174143,0.0003196476,0.00014258677,0.00017722914,0.0002437752,0.0006225888,0.0003906536,0.0006438135,0.00057693885],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00008904054,0.000013515895,0.0002106423,0.00016850999,0.000009202723,0.00012129032,0.00005165168,0.0003317416,0.99152094,0.001196522,0.0007157478,0.00557125],"study_design_scores_gemma":[0.00001867433,0.00018946595,0.0017069256,0.000017678527,0.000012202145,0.0002082272,0.00006228327,0.0029657776,0.98867804,0.00038548937,0.005747106,0.000008221302],"about_ca_topic_score_codex":0.0004403659,"about_ca_topic_score_gemma":0.0017841699,"teacher_disagreement_score":0.002738976,"about_ca_system_score_codex":0.00035735406,"about_ca_system_score_gemma":0.00021523982,"threshold_uncertainty_score":0.009162784},"labels":[],"label_agreement":null},{"id":"W2217692482","doi":"10.1016/j.egypro.2015.12.295","title":"Preparation and Characterization of a-SiC:H Absorber Layer for Semi-transparent Solar Cells","year":2015,"lang":"en","type":"article","venue":"Energy Procedia","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":3,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Materials science; Optoelectronics; Band gap; Diode; Plasma-enhanced chemical vapor deposition; Layer (electronics); Open-circuit voltage; Silicon; Solar cell; Current density; Chemical vapor deposition; Voltage; Nanotechnology; Electrical engineering","score_opus":0.021146866752489512,"score_gpt":0.2273597171963914,"score_spread":0.2062128504439019,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2217692482","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9857076,0.0007350183,0.010087205,0.00004167849,0.00004015056,0.00021633624,0.001014779,0.00013508764,0.0020220436],"genre_scores_gemma":[0.9730463,0.0007556974,0.023413552,0.000031958654,0.000017317785,0.00016213453,0.0009118555,0.000057141962,0.0016039575],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998611,0.000009826088,0.0000133499,0.000022836231,0.0000747343,0.000018075942],"domain_scores_gemma":[0.999782,0.00003877982,0.000034543526,0.000033806267,0.00008554736,0.000025285482],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00018367736,0.00027652015,0.00027847054,0.00042616704,0.0003212512,0.00030001366,0.0002943669,0.00035227183,0.00091257156],"category_scores_gemma":[0.00028456489,0.00017115929,0.00020130376,0.00030719754,0.00013383834,0.00015350412,0.00012967733,0.00028754273,0.0003092911],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00000788385,0.0000066975836,0.00010404199,0.00002509797,0.0000020214798,0.000031037198,0.000008721245,0.000048876493,0.99904805,0.0000137801235,0.000020907897,0.00068290957],"study_design_scores_gemma":[0.0000044956887,0.00010210472,0.003935388,0.000005082583,0.0000088842235,0.00006634159,0.000023589715,0.0008997726,0.9939679,0.000012851316,0.00096896896,0.000004635337],"about_ca_topic_score_codex":0.0005952343,"about_ca_topic_score_gemma":0.0014787638,"teacher_disagreement_score":0.00091257156,"about_ca_system_score_codex":0.00011670214,"about_ca_system_score_gemma":0.0002053422,"threshold_uncertainty_score":0.0030528903},"labels":[],"label_agreement":null},{"id":"W2231062605","doi":"10.4028/www.scientific.net/ssp.131-133.77","title":"Very First Relaxation Steps in Low Temperature Buffer Layers SiGe/Si Heterostructures Studied by X-Ray Topography","year":2007,"lang":"en","type":"article","venue":"Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Saint Paul University","funders":"","keywords":"Materials science; Annealing (glass); Dislocation; Nucleation; Metastability; Heterojunction; Relaxation (psychology); Condensed matter physics; Stress relaxation; Condensation; Crystallographic defect; Substrate (aquarium); Crystallography; Optoelectronics; Composite material; Chemistry; Thermodynamics; Physics; Creep; Geology","score_opus":0.014063668113941287,"score_gpt":0.24695490154459324,"score_spread":0.23289123343065196,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2231062605","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99843687,0.00020525428,0.00075391436,0.000012337827,0.0000024908372,0.0000046884297,0.00007900031,0.000029586748,0.00047580083],"genre_scores_gemma":[0.99877673,0.00008738627,0.00037081455,0.0000051359752,9.611672e-7,0.000004753227,0.00010596078,0.00000823872,0.00064006826],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99997115,0.0000018738997,8.4354764e-7,0.000007033645,0.000008056502,0.000010994242],"domain_scores_gemma":[0.99992204,0.000022458637,0.000019500627,0.000007367735,0.00001231948,0.000016299164],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000050707924,0.00014391665,0.000098627286,0.00012596307,0.00012004143,0.00023103766,0.00016261154,0.00014341321,0.001392244],"category_scores_gemma":[0.00016172335,0.00017178271,0.00010903646,0.00007639485,0.00016659654,0.00020936703,0.000103324164,0.00031065135,0.0001627645],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00010394811,0.000014383818,0.001480442,0.000025528567,0.0000057560487,0.00011351933,0.00008419973,0.00028525802,0.9967302,0.0001522401,0.00004111488,0.00096342975],"study_design_scores_gemma":[0.000025535,0.00032417462,0.06253932,0.00001147461,0.000018476489,0.0002920638,0.00014644659,0.0046758754,0.93060154,0.00010470998,0.0012485042,0.000011832217],"about_ca_topic_score_codex":0.0013533694,"about_ca_topic_score_gemma":0.0013563198,"teacher_disagreement_score":0.001392244,"about_ca_system_score_codex":0.00021360326,"about_ca_system_score_gemma":0.000082104285,"threshold_uncertainty_score":0.004657507},"labels":[],"label_agreement":null},{"id":"W2231358698","doi":"10.1002/sdtp.10506","title":"Paper No P24: Effect of Mechanical Strain on Charge‐Transfer V <sub>T</sub> ‐Shift Compensation Circuits for Flexible AMOLED Displays","year":2015,"lang":"en","type":"article","venue":"SID Symposium Digest of Technical Papers","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Materials science; Polyethylene naphthalate; Thin-film transistor; AMOLED; Optoelectronics; Threshold voltage; Substrate (aquarium); Amorphous solid; Flexible display; Electronic circuit; Transistor; Flexible electronics; Voltage; Electrical engineering; Composite material; Polyethylene terephthalate; Active matrix; Crystallography","score_opus":0.011211565849793824,"score_gpt":0.2180719780361872,"score_spread":0.20686041218639337,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2231358698","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9961279,0.00045520885,0.0017003166,0.00006316081,0.000071421375,0.0000090253525,0.00007473427,0.00010461005,0.0013936918],"genre_scores_gemma":[0.99685514,0.00013312831,0.0010035459,0.000029317462,0.000022394386,0.000004712059,0.0000667921,0.00003371472,0.0018512867],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99987495,0.000012196857,0.000007955037,0.000026701737,0.0000478079,0.000030334433],"domain_scores_gemma":[0.99957496,0.00015360856,0.00008703841,0.000046789515,0.00009784041,0.00003984719],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000116815594,0.00021488692,0.00019966782,0.0001608207,0.00025449248,0.00037368748,0.00036103636,0.00031633856,0.003157773],"category_scores_gemma":[0.0005809142,0.00013960067,0.00017528569,0.00012222725,0.00020644315,0.00031664062,0.00012129654,0.00021841047,0.00034296256],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0002896875,0.00002426759,0.0011995047,0.000047852463,0.000029178515,0.00019410583,0.000039360675,0.0006413962,0.989267,0.00008946729,0.0003072239,0.007871125],"study_design_scores_gemma":[0.000013165158,0.00045482346,0.004418492,0.0000040240707,0.000025686313,0.00019718162,0.000018757055,0.0028038889,0.99058914,0.00002626502,0.0014414942,0.0000070718315],"about_ca_topic_score_codex":0.0005521115,"about_ca_topic_score_gemma":0.00081901334,"teacher_disagreement_score":0.003157773,"about_ca_system_score_codex":0.00027455806,"about_ca_system_score_gemma":0.00010413059,"threshold_uncertainty_score":0.010563791},"labels":[],"label_agreement":null},{"id":"W2241089090","doi":"10.1117/12.2283947","title":"Amorphous silicon TFT pulse bias induced metastability","year":2017,"lang":"en","type":"article","venue":"","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Thin-film transistor; Materials science; Optoelectronics; Metastability; Silicon; Active matrix; Amorphous solid; Threshold voltage; Transistor; Biasing; Amorphous silicon; Liquid-crystal display; Microelectronics; Subthreshold conduction; Pulse (music); Electronic circuit; Voltage; Electrical engineering; Nanotechnology; Crystalline silicon; Engineering; Physics; Chemistry; Crystallography","score_opus":0.061876002441987495,"score_gpt":0.25377112054502643,"score_spread":0.19189511810303894,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2241089090","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9963219,0.00045705747,0.0015897567,0.00003490997,0.000014780358,0.000012334351,0.0002879202,0.00007624987,0.0012052023],"genre_scores_gemma":[0.9980526,0.000100788326,0.0005739269,0.00001313091,0.000004670398,0.0000069080306,0.00015696177,0.000008712456,0.0010823362],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999143,0.0000044819576,0.0000063498514,0.000021946436,0.00003318104,0.000019846022],"domain_scores_gemma":[0.9997807,0.00008540248,0.000035316792,0.000027205753,0.000050593597,0.00002074999],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00008204418,0.00012750835,0.00018000002,0.00011979764,0.00022504525,0.00016787734,0.0001576867,0.00022496545,0.0020033296],"category_scores_gemma":[0.00022181575,0.000065208995,0.000110497116,0.00017246694,0.00022217601,0.00018878917,0.00011326342,0.00023395394,0.00015462944],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00005309589,0.0000055355636,0.0005845711,0.000028517052,0.0000040640925,0.00012614042,0.000042357413,0.00012426656,0.9975183,0.000044320226,0.000049336104,0.0014194542],"study_design_scores_gemma":[0.0000049518053,0.00018985732,0.0050366996,0.0000019920305,0.000005295268,0.0001983831,0.000025847976,0.0006652572,0.99320257,0.000031543368,0.0006347118,0.0000027842646],"about_ca_topic_score_codex":0.0017403872,"about_ca_topic_score_gemma":0.0016071033,"teacher_disagreement_score":0.0020033296,"about_ca_system_score_codex":0.00039878578,"about_ca_system_score_gemma":0.00016299497,"threshold_uncertainty_score":0.006701827},"labels":[],"label_agreement":null},{"id":"W2247603158","doi":"10.2495/sdp-v10-n6-863-879","title":"Integrating photovoltaic cells into decorative architectural glass using traditonal glasspainting techniques and fluorescent dyes","year":2015,"lang":"en","type":"article","venue":"International Journal of Sustainable Development and Planning","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":2,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":false,"route_ca_venue":true,"route_about_ca":false,"ca_institutions":"","funders":"Leverhulme Trust","keywords":"Photovoltaic system; Glazing; Opacity; Materials science; Fluorescence; Optoelectronics; Optics; Composite material; Engineering; Electrical engineering","score_opus":0.01716327800301449,"score_gpt":0.24509813518048001,"score_spread":0.22793485717746553,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2247603158","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9557575,0.00085255125,0.037678752,0.00009119465,0.000116402705,0.00013741436,0.00013091914,0.00044094835,0.004794286],"genre_scores_gemma":[0.94144136,0.0010647752,0.050622985,0.00011442177,0.000025345167,0.00009342306,0.00012161886,0.0000906436,0.00642544],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99983406,0.000012511333,0.000009616807,0.000030669366,0.00007118732,0.000041948602],"domain_scores_gemma":[0.99990094,0.00002365456,0.000028674749,0.000020877944,0.00001647422,0.000009345194],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00019798703,0.00038554484,0.00021966585,0.0002595039,0.00014333858,0.00048730243,0.00038513434,0.00042935272,0.00097400113],"category_scores_gemma":[0.00023445975,0.00026834029,0.00035973045,0.00027989378,0.00030392752,0.00024632254,0.00030167922,0.00037381003,0.00035197425],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000012384933,0.000010358464,0.000099195895,0.00003685896,0.000003616337,0.000063285224,0.00001990904,0.0001771077,0.99606955,0.00009260555,0.000024602232,0.0033906882],"study_design_scores_gemma":[0.000005924845,0.00015351584,0.0008265608,0.0000045120983,0.000009152108,0.0001022552,0.000014578336,0.00074653537,0.9962059,0.00002648354,0.0018992316,0.000005339009],"about_ca_topic_score_codex":0.0006846641,"about_ca_topic_score_gemma":0.002033245,"teacher_disagreement_score":0.00097400113,"about_ca_system_score_codex":0.0003093881,"about_ca_system_score_gemma":0.00014440024,"threshold_uncertainty_score":0.0032583475},"labels":[],"label_agreement":null},{"id":"W2252557504","doi":"10.1557/proc-769-h2.2","title":"Low Temperature a-Si:H Pixel Circuits for Mechanically Flexible AMOLED Displays","year":2003,"lang":"en","type":"article","venue":"MRS Proceedings","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":5,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"AMOLED; Materials science; Thin-film transistor; Electronic circuit; Transistor; Optoelectronics; OLED; Current mirror; Electrical engineering; Cascode; Threshold voltage; Voltage; Active matrix; CMOS; Nanotechnology; Amplifier; Layer (electronics); Engineering","score_opus":0.009209937390620948,"score_gpt":0.20128571099132897,"score_spread":0.19207577360070802,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2252557504","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9073213,0.0029729395,0.06333856,0.00100553,0.00054781744,0.00009826642,0.00048012417,0.002163136,0.022072189],"genre_scores_gemma":[0.97245026,0.00026844806,0.015556368,0.00015127704,0.00010742146,0.000031943222,0.00011294719,0.00013320545,0.011188104],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99990666,0.000009419548,0.000003613712,0.000019529993,0.000041072333,0.000019709672],"domain_scores_gemma":[0.99987435,0.000035957626,0.000028161006,0.000020281735,0.000028663653,0.000012662052],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000096171534,0.00022854503,0.00018618013,0.00015505243,0.0003377005,0.00056674174,0.0007661058,0.00045160882,0.0044499384],"category_scores_gemma":[0.00025024137,0.00019154944,0.00010982294,0.00013317152,0.00024773995,0.00068697723,0.00032450052,0.00046249907,0.0010214973],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00013144851,0.000019433788,0.00025433063,0.00006156574,0.000010504699,0.0000635349,0.00004388528,0.0002596738,0.98911357,0.0017836366,0.0012408509,0.007017504],"study_design_scores_gemma":[0.000030799714,0.0003310296,0.0022680382,0.000010353256,0.000016627895,0.00025647474,0.000048408747,0.007567428,0.9808576,0.00079240074,0.0078014247,0.000019526118],"about_ca_topic_score_codex":0.00020382731,"about_ca_topic_score_gemma":0.0011274816,"teacher_disagreement_score":0.0044499384,"about_ca_system_score_codex":0.0003342633,"about_ca_system_score_gemma":0.000120139455,"threshold_uncertainty_score":0.014886498},"labels":[],"label_agreement":null},{"id":"W2254295919","doi":"","title":"Top-Gate Nanocrystalline Silicon Thin Film Transistors","year":2008,"lang":"en","type":"dissertation","venue":"UWSpace (University of Waterloo)","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":6,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"","funders":"University of Waterloo; Foreign Affairs and International Trade Canada; International Council for Canadian Studies; Government of Canada","keywords":"Thin-film transistor; Materials science; Silicon; Nanocrystalline material; Nanocrystalline silicon; Transistor; Optoelectronics; Engineering physics; Nanotechnology; Electrical engineering; Engineering; Crystalline silicon; Amorphous silicon","score_opus":0.006962310503684667,"score_gpt":0.16824111213235984,"score_spread":0.16127880162867517,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2254295919","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.67976296,0.018158387,0.06391377,0.0022210511,0.002248539,0.0003546247,0.012606618,0.004497292,0.21623683],"genre_scores_gemma":[0.9077098,0.007560793,0.033678886,0.00062390516,0.0001117111,0.00013441357,0.0018068746,0.00014407796,0.04822955],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998981,0.0000015868392,0.0000031603122,0.000030253665,0.00005238528,0.000014514274],"domain_scores_gemma":[0.9999664,0.0000045532443,0.00000457335,0.0000062087265,0.000012113902,0.0000062247104],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000029795126,0.0001744214,0.00022690657,0.000089241876,0.00017153996,0.0003446366,0.00064260286,0.00024726777,0.004144968],"category_scores_gemma":[0.00008934328,0.0000974607,0.00013270846,0.0001852406,0.00008871251,0.0003108952,0.00017685708,0.00027163175,0.0016161837],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000046078705,0.000024954697,0.00025843878,0.00020626577,0.000013489538,0.00023755267,0.000036295438,0.00064479705,0.96334964,0.0022812213,0.0064925863,0.026408795],"study_design_scores_gemma":[0.000023820978,0.00011176873,0.0012784203,0.000022785829,0.000021899086,0.0002578647,0.000035429104,0.01481089,0.9140473,0.00069829175,0.06867463,0.000016803924],"about_ca_topic_score_codex":0.0027053375,"about_ca_topic_score_gemma":0.00777683,"teacher_disagreement_score":0.004144968,"about_ca_system_score_codex":0.0005470995,"about_ca_system_score_gemma":0.00020822251,"threshold_uncertainty_score":0.013866305},"labels":[],"label_agreement":null},{"id":"W2258798293","doi":"10.71781/17167","title":"Environnement local des défauts structurels et ordre à moyenne portée dans le silicium amorphe","year":2014,"lang":"fr","type":"dissertation","venue":"Open MIND","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"","funders":"Natural Sciences and Engineering Research Council of Canada; Compute Canada","keywords":"Materials science","score_opus":0.015240130378541,"score_gpt":0.24757012264681244,"score_spread":0.23232999226827145,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2258798293","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9913249,0.00024428518,0.0058563733,0.000058081,0.000007651613,0.000004551799,0.00009753536,0.000057020658,0.0023495308],"genre_scores_gemma":[0.9977126,0.00010969866,0.0011711484,0.000005747179,0.0000013336397,0.000005568164,0.000046253288,0.000012268602,0.0009353719],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99991274,0.0000102993035,0.000003695926,0.00003271938,0.000025933965,0.000014532937],"domain_scores_gemma":[0.9998431,0.00007044481,0.000025622267,0.00002239373,0.000025107212,0.000013186899],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0001754979,0.00016415461,0.0002457905,0.00023920243,0.00045796265,0.0007009686,0.00026309505,0.0003678451,0.0018794851],"category_scores_gemma":[0.00040557125,0.00026664662,0.00022687933,0.0003087973,0.0006671056,0.00052997656,0.00026740608,0.00025913972,0.00016286277],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00064059754,0.000098614706,0.023749093,0.0003509929,0.000118884906,0.0015858079,0.0011133091,0.36864173,0.54891866,0.039083097,0.00061727344,0.015081951],"study_design_scores_gemma":[0.00006500141,0.0005234319,0.058432247,0.00004829753,0.00010143442,0.00054300483,0.0013416064,0.6075243,0.31006774,0.013883045,0.0073392685,0.00013065542],"about_ca_topic_score_codex":0.0044241985,"about_ca_topic_score_gemma":0.005175437,"teacher_disagreement_score":0.0044241985,"about_ca_system_score_codex":0.00071153505,"about_ca_system_score_gemma":0.0004009429,"threshold_uncertainty_score":0.008796871},"labels":[],"label_agreement":null},{"id":"W2261127816","doi":"10.1557/proc-762-a18.10","title":"Above-Threshold Parameter Extraction Including Contact Resistance Effects for <i>a</i>-Si:H TFTs on Glass and Plastic","year":2003,"lang":"en","type":"article","venue":"MRS Proceedings","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":6,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Materials science; Thin-film transistor; Contact resistance; Threshold voltage; Amorphous silicon; Saturation current; Extraction (chemistry); Saturation (graph theory); Optoelectronics; Transistor; Voltage; Silicon; Composite material; Electrical engineering; Crystalline silicon","score_opus":0.01415188180340561,"score_gpt":0.23075106537467605,"score_spread":0.21659918357127045,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2261127816","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.965699,0.000813755,0.026512664,0.0001808054,0.00004164989,0.00005490026,0.0011365623,0.0008455977,0.004714967],"genre_scores_gemma":[0.9924412,0.00023667655,0.005395299,0.000020734518,0.000008888275,0.000024573354,0.00040739818,0.00011865815,0.001346657],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99984956,0.00001199703,0.000011498612,0.000035647805,0.00005454855,0.00003679012],"domain_scores_gemma":[0.9997713,0.00010374265,0.000032566957,0.00003305805,0.000047413847,0.000011908607],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00018567259,0.0004935422,0.0004589757,0.0005087107,0.0004837287,0.0005933611,0.0006197188,0.00050488213,0.002273547],"category_scores_gemma":[0.00062289176,0.00036449483,0.0004528573,0.0005989873,0.00020633826,0.0009395311,0.0002197951,0.00030917113,0.0005766208],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00046315874,0.00005282807,0.0027456693,0.00021905775,0.00007024935,0.00040455814,0.00024081535,0.009704382,0.9625431,0.00081843964,0.00077800045,0.021959784],"study_design_scores_gemma":[0.00003025487,0.00019367412,0.008564997,0.000022100765,0.00007449916,0.00019371623,0.00013226988,0.037201576,0.9512537,0.00040832005,0.0018814686,0.000043406682],"about_ca_topic_score_codex":0.00672433,"about_ca_topic_score_gemma":0.01240846,"teacher_disagreement_score":0.00672433,"about_ca_system_score_codex":0.0008076764,"about_ca_system_score_gemma":0.0005763005,"threshold_uncertainty_score":0.013370395},"labels":[],"label_agreement":null},{"id":"W2266294095","doi":"10.1557/proc-862-a22.2","title":"Low Temperature Metal-Free Fabrication of polycrystalline Si and Ge TFTs by PECVD Hydrogenation","year":2005,"lang":"en","type":"article","venue":"MRS Proceedings","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Acadia University","funders":"University of Tehran","keywords":"Materials science; Annealing (glass); Polycrystalline silicon; Plasma-enhanced chemical vapor deposition; Fabrication; Crystallinity; Crystallite; Thin-film transistor; Silicon; Grain size; Metal; Optoelectronics; Chemical engineering; Nanotechnology; Layer (electronics); Composite material; Metallurgy","score_opus":0.003964366435219288,"score_gpt":0.17645501333626643,"score_spread":0.17249064690104715,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2266294095","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.97734636,0.0011345316,0.015492124,0.0002520173,0.00013394405,0.000046534555,0.00083059724,0.00030616566,0.0044575697],"genre_scores_gemma":[0.97864807,0.00057860644,0.014832057,0.00004927694,0.0000277001,0.00005425972,0.0006468023,0.00012244115,0.005040774],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998852,0.0000047957415,0.0000068959957,0.000028062492,0.000052380306,0.000022657681],"domain_scores_gemma":[0.9998889,0.000030033212,0.000017122922,0.00003222613,0.000021150843,0.000010553786],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00010488477,0.00017730148,0.00038146312,0.0001156762,0.00022759802,0.00030109394,0.00059614383,0.0003206539,0.0014362439],"category_scores_gemma":[0.0002538457,0.00024227348,0.00013416915,0.00021616202,0.0002291053,0.00043709978,0.00019275132,0.00043935684,0.00038161848],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000040254465,0.0000063370394,0.00008108835,0.000040578892,0.000006561398,0.000060291935,0.000031094703,0.00011577679,0.9973488,0.00019861902,0.00021320074,0.0018573474],"study_design_scores_gemma":[0.000009834151,0.000034374803,0.0011081995,0.0000025202676,0.000004367117,0.00010495504,0.000014722963,0.00064793206,0.99660337,0.00007275586,0.0013922116,0.000004720034],"about_ca_topic_score_codex":0.0009829487,"about_ca_topic_score_gemma":0.0035344486,"teacher_disagreement_score":0.0014362439,"about_ca_system_score_codex":0.00032389007,"about_ca_system_score_gemma":0.00021343245,"threshold_uncertainty_score":0.004804671},"labels":[],"label_agreement":null},{"id":"W2266688014","doi":"10.1557/proc-762-a11.1","title":"Numerical Studies Of The Dynamics Of Silicon: Relaxation, Nucleation And Energy Landscape","year":2003,"lang":"en","type":"article","venue":"MRS Proceedings","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Université de Montréal","funders":"","keywords":"Nucleation; Materials science; Relaxation (psychology); Molecular dynamics; Silicon; Amorphous silicon; Chemical physics; Amorphous solid; Activation energy; Energy landscape; Statistical physics; Thermodynamics; Physical chemistry; Computational chemistry; Crystallography; Crystalline silicon; Physics; Chemistry; Metallurgy","score_opus":0.008211106584855587,"score_gpt":0.19549330503086385,"score_spread":0.18728219844600827,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2266688014","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9045267,0.0022059027,0.051839508,0.0030063542,0.00016315082,0.0000717608,0.0004398352,0.00026827853,0.037478544],"genre_scores_gemma":[0.98751986,0.0005585233,0.008855526,0.00009544998,0.00005132691,0.00004836316,0.00019713632,0.00006314993,0.0026106334],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9999118,0.000021744692,0.000003839085,0.00001052262,0.000027661112,0.000024502438],"domain_scores_gemma":[0.9985525,0.0010547101,0.00012479641,0.0000709491,0.0001189489,0.00007816422],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0004842639,0.00035724827,0.00049563206,0.00052326446,0.0005575962,0.00078696257,0.0009334107,0.0010960491,0.0026284268],"category_scores_gemma":[0.003920862,0.00036375754,0.0004316212,0.0005470849,0.0010798686,0.0009761643,0.0004680478,0.0008483964,0.0001565117],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00008283979,0.00007509303,0.0012915572,0.00013790703,0.000037253987,0.00011552248,0.00013917235,0.95678043,0.005343787,0.03188778,0.00080679345,0.0033018775],"study_design_scores_gemma":[0.0000136221415,0.000008710649,0.0002539057,0.000006562495,0.000003485222,0.000009344129,0.000019829402,0.9968347,0.00047444217,0.0021759446,0.00019443818,0.0000051409697],"about_ca_topic_score_codex":0.0084789265,"about_ca_topic_score_gemma":0.00730021,"teacher_disagreement_score":0.0084789265,"about_ca_system_score_codex":0.00094621925,"about_ca_system_score_gemma":0.00068098964,"threshold_uncertainty_score":0.016859174},"labels":[],"label_agreement":null},{"id":"W2270608576","doi":"10.1063/1.4941021","title":"An amorphous-to-crystalline phase transition within thin silicon films grown by ultra-high-vacuum evaporation and its impact on the optical response","year":2016,"lang":"en","type":"article","venue":"Journal of Applied Physics","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":21,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of British Columbia, Okanagan Campus; University of British Columbia; National Research Council Canada; University of Regina","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Silicon; Materials science; Crystalline silicon; Amorphous solid; Thin film; Raman spectroscopy; Nanocrystalline silicon; Vacuum evaporation; Analytical Chemistry (journal); Evaporation; Amorphous silicon; Substrate (aquarium); Fused quartz; Phase transition; Quartz; Crystallography; Optics; Optoelectronics; Nanotechnology; Chemistry; Composite material; Condensed matter physics; Organic chemistry","score_opus":0.009028247759031396,"score_gpt":0.2403741277001082,"score_spread":0.2313458799410768,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2270608576","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9982461,0.0002510624,0.0009702807,0.000011918607,0.0000046142613,0.0000040709688,0.000051115498,0.000015832002,0.00044505927],"genre_scores_gemma":[0.9968645,0.00031453653,0.0022492756,0.000008275427,0.0000021436338,0.000007530351,0.00010813338,0.000014459535,0.0004309722],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998876,0.00000904551,0.000006992155,0.000018770457,0.00005394847,0.00002355989],"domain_scores_gemma":[0.9998486,0.00006025635,0.00003278506,0.000018469744,0.00002971248,0.0000101901105],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00011260544,0.00018774318,0.00015630515,0.00017138498,0.00016484414,0.0003597248,0.00023361781,0.00017567471,0.0006023639],"category_scores_gemma":[0.00022038646,0.00024918502,0.00014321029,0.00017355374,0.00022295969,0.00014953595,0.00016586963,0.00028933404,0.000089953835],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000011758335,0.0000039610327,0.00036726927,0.00001914646,0.0000041615235,0.00002567426,0.000014508531,0.00007141601,0.999126,0.000026837075,0.000007934038,0.00032130728],"study_design_scores_gemma":[0.0000021240246,0.00003800159,0.0044067176,0.0000031695474,0.0000064468445,0.000050489285,0.000026277337,0.00059793994,0.9946536,0.000009012063,0.00020433111,0.0000018578264],"about_ca_topic_score_codex":0.001519894,"about_ca_topic_score_gemma":0.0030804218,"teacher_disagreement_score":0.001519894,"about_ca_system_score_codex":0.00021429254,"about_ca_system_score_gemma":0.00017337411,"threshold_uncertainty_score":0.0030221343},"labels":[],"label_agreement":null},{"id":"W2272989096","doi":"10.1557/proc-762-a6.15","title":"Electrical and Optical Properties of Amorphous and Microcrystalline Hydrogenated Silicon Films Deposited Using Saddle Field Glow Discharge","year":2003,"lang":"en","type":"article","venue":"MRS Proceedings","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":7,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Toronto","funders":"","keywords":"Materials science; Microcrystalline silicon; Glow discharge; Microcrystalline; Amorphous silicon; Optoelectronics; Engineering physics; Chemical engineering; Silicon; Crystalline silicon; Plasma; Crystallography","score_opus":0.0101721079002574,"score_gpt":0.18315265049444052,"score_spread":0.1729805425941831,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2272989096","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9988147,0.00024780212,0.0001445992,0.000021005446,0.000006305993,0.000002489989,0.0001485834,0.000014614074,0.0005999458],"genre_scores_gemma":[0.9985165,0.00014364257,0.00016659986,0.000012571558,0.0000045426814,0.0000029518771,0.00019730184,0.0000071719846,0.0009487709],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999137,0.000004642707,0.00000458685,0.000018604882,0.00003413809,0.000024488561],"domain_scores_gemma":[0.9997693,0.00009662483,0.00003494624,0.000027431763,0.000051880743,0.000019966968],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00011573224,0.0001369803,0.00023633381,0.00020590097,0.00019315146,0.00032119363,0.00035310347,0.00028127036,0.0016820856],"category_scores_gemma":[0.00038292457,0.00018362411,0.00014529552,0.00028185183,0.0002582439,0.00025045502,0.00012477527,0.00027691168,0.0002076236],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00032307266,0.000023309041,0.0009514039,0.0000531958,0.000018803577,0.00014627345,0.000088294684,0.00027800555,0.9966,0.00014113111,0.00015208553,0.0012245066],"study_design_scores_gemma":[0.000042211097,0.00042937102,0.020348504,0.000009957197,0.000031181582,0.00018966908,0.000143189,0.002470202,0.9753921,0.00007614028,0.0008574748,0.000009997837],"about_ca_topic_score_codex":0.0020321424,"about_ca_topic_score_gemma":0.0026370839,"teacher_disagreement_score":0.0020321424,"about_ca_system_score_codex":0.00027367886,"about_ca_system_score_gemma":0.0001491664,"threshold_uncertainty_score":0.0056270957},"labels":[],"label_agreement":null},{"id":"W2281962343","doi":"10.1557/proc-862-a5.4","title":"Effects of Post Annealing and Material Stability on Undoped and n<sup>+</sup> nc-Si:H Films Deposited at 75 °C Using 13.56 MHz PECVD","year":2005,"lang":"en","type":"article","venue":"MRS Proceedings","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Materials science; Annealing (glass); Plasma-enhanced chemical vapor deposition; Analytical Chemistry (journal); Amorphous solid; Hydrogen; Oxygen; Chemical vapor deposition; Thin film; Nanocrystalline material; Silicon; Nanotechnology; Crystallography; Composite material; Metallurgy; Chemistry","score_opus":0.007917706373809301,"score_gpt":0.19289727227425196,"score_spread":0.18497956590044265,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2281962343","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9981679,0.0005224879,0.00028858875,0.000032144253,0.000024915358,0.000005309027,0.0001532388,0.000024541483,0.0007809486],"genre_scores_gemma":[0.99788684,0.00017337454,0.0003646746,0.00001878211,0.000008611427,0.0000057810416,0.00018573589,0.00002305975,0.0013331738],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998221,0.00002034301,0.000016614571,0.00004799243,0.00003800814,0.000054971144],"domain_scores_gemma":[0.9995722,0.00019382089,0.000058030095,0.000041060084,0.000106126616,0.000028661334],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00021551602,0.00020449307,0.00022279138,0.00013965365,0.0003648936,0.00038588294,0.00031945843,0.00032201715,0.0025490108],"category_scores_gemma":[0.00069199275,0.00022777056,0.00014207701,0.00020865718,0.0002289376,0.0003763748,0.00012228404,0.00027263636,0.0002915073],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0009892451,0.000031940563,0.0009977582,0.000055054716,0.00002335487,0.00011867008,0.00008412329,0.00028515048,0.9950127,0.00005952522,0.00009194642,0.0022504695],"study_design_scores_gemma":[0.0000075292864,0.00018436713,0.0053505306,0.0000032536107,0.000018480325,0.00004784352,0.000041538875,0.00053559954,0.9934411,0.0000073963497,0.00035729152,0.0000049749174],"about_ca_topic_score_codex":0.0025498073,"about_ca_topic_score_gemma":0.005484102,"teacher_disagreement_score":0.0025498073,"about_ca_system_score_codex":0.00033575512,"about_ca_system_score_gemma":0.0001970529,"threshold_uncertainty_score":0.0085273385},"labels":[],"label_agreement":null},{"id":"W2282708975","doi":"10.1088/0957-4484/27/14/145703","title":"Adjustable optical response of amorphous silicon nanowires integrated with thin films","year":2016,"lang":"en","type":"article","venue":"Nanotechnology","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":38,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Materials science; Nanowire; Thin film; Optoelectronics; Amorphous solid; Amorphous silicon; Photovoltaics; Silicon; Optics; Nanotechnology; Crystalline silicon; Photovoltaic system","score_opus":0.006621597047099777,"score_gpt":0.18783291792668283,"score_spread":0.18121132087958305,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2282708975","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99781287,0.00015855626,0.0011197294,0.00002127231,0.000015164797,0.000004791808,0.000046235797,0.0000658293,0.0007555835],"genre_scores_gemma":[0.9969643,0.00019710638,0.001978567,0.000013866003,0.0000065099375,0.000009073579,0.00006211029,0.00001968628,0.00074873527],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99986994,0.000007719496,0.0000070600418,0.000037415208,0.00004922641,0.00002862015],"domain_scores_gemma":[0.99986386,0.000040755083,0.00004238072,0.000014447435,0.00002093986,0.000017451399],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000086079745,0.0003179074,0.00018333022,0.00016510196,0.00012824374,0.00046074862,0.00034428865,0.00033542127,0.0007168896],"category_scores_gemma":[0.00018764743,0.00026737803,0.00014796144,0.00016260348,0.0001727342,0.0002587188,0.00022160055,0.00024874826,0.00024545536],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000018993476,0.000007909636,0.00010295673,0.000008951944,0.0000038056462,0.000031861586,0.000011393689,0.00009627634,0.99925286,0.00003913846,0.00001645135,0.00040939084],"study_design_scores_gemma":[0.000009034551,0.000089552435,0.00072639924,0.0000021069352,0.000007426115,0.000025650521,0.000013206061,0.0019111378,0.99687886,0.000017954591,0.00031553945,0.0000032388905],"about_ca_topic_score_codex":0.00064579357,"about_ca_topic_score_gemma":0.0011235881,"teacher_disagreement_score":0.0007168896,"about_ca_system_score_codex":0.0002666451,"about_ca_system_score_gemma":0.00014252396,"threshold_uncertainty_score":0.0023982525},"labels":[],"label_agreement":null},{"id":"W2284646982","doi":"10.1557/proc-769-h9.8","title":"Optimization of 75°C amorphous silicon nitride for TFTs on plastics","year":2003,"lang":"en","type":"article","venue":"MRS Proceedings","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":13,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"University of Waterloo","keywords":"Materials science; Passivation; Amorphous solid; Plasma-enhanced chemical vapor deposition; Dielectric; Nitride; Silicon nitride; Gate dielectric; Composite material; Chemical vapor deposition; Analytical Chemistry (journal); Optoelectronics; Silicon; Layer (electronics); Transistor; Crystallography; Electrical engineering","score_opus":0.010539067457409224,"score_gpt":0.19296788110810092,"score_spread":0.1824288136506917,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2284646982","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9900007,0.0011950207,0.0035016504,0.0001379012,0.0000650808,0.00008050489,0.00050100905,0.00017900456,0.0043391357],"genre_scores_gemma":[0.99330163,0.0006138365,0.0036829435,0.000033668566,0.000013538982,0.00006575949,0.0004987974,0.00011620204,0.0016736462],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99980015,0.000010049557,0.000010491806,0.000049230017,0.0000749698,0.0000551944],"domain_scores_gemma":[0.9998466,0.00002952464,0.000033897846,0.000011831437,0.000060904447,0.00001733573],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0002175716,0.0005602612,0.0005487734,0.00027571357,0.0006068803,0.0005514475,0.000496166,0.0003973515,0.001492148],"category_scores_gemma":[0.000440769,0.00028336552,0.00026956806,0.00036200654,0.00019928285,0.00040768,0.00025503463,0.00039725532,0.0005598203],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00016905721,0.000039724695,0.00047330096,0.0001085804,0.000017703336,0.000070697555,0.000050660212,0.0034024364,0.99292964,0.000118551594,0.00026455024,0.0023550114],"study_design_scores_gemma":[0.000020093816,0.0003386703,0.0019968203,0.000011628233,0.00002954208,0.000046446617,0.000053872132,0.004635003,0.9903087,0.00005036216,0.0024925848,0.000016307298],"about_ca_topic_score_codex":0.006380897,"about_ca_topic_score_gemma":0.01741308,"teacher_disagreement_score":0.006380897,"about_ca_system_score_codex":0.0010958293,"about_ca_system_score_gemma":0.0008578733,"threshold_uncertainty_score":0.012687504},"labels":[],"label_agreement":null},{"id":"W2285445366","doi":"10.1557/proc-862-a9.4","title":"Two-dimensional a-Si:H/a-SiC:H n-i-p sensor array with ITO/a-SiNx antireflection coating","year":2005,"lang":"en","type":"article","venue":"MRS Proceedings","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":2,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Materials science; Photodiode; Optoelectronics; Diode; Passivation; Fabrication; Quantum efficiency; Leakage (economics); Photodetector; p–n junction; Biasing; Voltage; Semiconductor; Layer (electronics); Nanotechnology","score_opus":0.010235169544757101,"score_gpt":0.21357419743168649,"score_spread":0.2033390278869294,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2285445366","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.93326724,0.0004581993,0.055326156,0.00037135457,0.00030032854,0.00011706863,0.0010462282,0.002052111,0.0070614014],"genre_scores_gemma":[0.91689456,0.00023609081,0.07706878,0.0002104948,0.000066855595,0.0001313323,0.00034999973,0.00006469968,0.004977219],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9995627,0.000032897067,0.000021610706,0.00014901209,0.00018129451,0.000052584204],"domain_scores_gemma":[0.99973077,0.00005894109,0.000041551782,0.000036667574,0.00008088656,0.00005113887],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00021661427,0.00050601334,0.00061213877,0.0003642206,0.0003594132,0.00059277576,0.0009904145,0.0008369309,0.0015184792],"category_scores_gemma":[0.00024485862,0.00062190293,0.00024531802,0.0003025785,0.00031528628,0.00054204185,0.000492085,0.0004041113,0.0006093523],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00009493866,0.00003786417,0.00024713532,0.00003259501,0.00001231559,0.000036289093,0.000022763601,0.00011938859,0.99699473,0.00007486139,0.0002837333,0.0020433222],"study_design_scores_gemma":[0.000021571332,0.00011192302,0.002794461,0.0000023285577,0.000017611716,0.00012349858,0.000023924218,0.0045971773,0.9912656,0.00003931274,0.0009844686,0.000018050081],"about_ca_topic_score_codex":0.0008758295,"about_ca_topic_score_gemma":0.0031032676,"teacher_disagreement_score":0.0015184792,"about_ca_system_score_codex":0.00035733855,"about_ca_system_score_gemma":0.0004447681,"threshold_uncertainty_score":0.0050798655},"labels":[],"label_agreement":null},{"id":"W2285471711","doi":"","title":"Amorphous silicon TFT circuit integration for OLED displays on glass and plastic","year":2003,"lang":"en","type":"article","venue":"UCL Discovery (University College London)","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"AMOLED; Thin-film transistor; Active matrix; Materials science; OLED; Optoelectronics; Current mirror; Threshold voltage; Electronic circuit; Transistor; Active layer; Backplane; Integrated circuit; Pixel; Electrical engineering; Voltage; Optics; Layer (electronics); Engineering; Physics; Nanotechnology","score_opus":0.00870672314832925,"score_gpt":0.16681098121538912,"score_spread":0.15810425806705988,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2285471711","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.6888449,0.020182041,0.24410568,0.0011426994,0.00050329696,0.00031187077,0.0007686477,0.0021458638,0.041994955],"genre_scores_gemma":[0.8355675,0.0070430473,0.14788496,0.00023148462,0.0001642073,0.00009319445,0.00047293212,0.00016012695,0.008382599],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.999889,0.000007939817,0.0000062155686,0.00002299198,0.000059638878,0.000014289434],"domain_scores_gemma":[0.9999052,0.00003164924,0.000021524158,0.000010387906,0.000022996475,0.000008126282],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00011679888,0.0002316239,0.00015397968,0.00023328971,0.0003051513,0.00052560534,0.0003487874,0.00031104227,0.0018397989],"category_scores_gemma":[0.00025141824,0.00013150983,0.00024994786,0.00023828939,0.00011530133,0.0005426735,0.00015430407,0.00028066308,0.0004111077],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000037191494,0.000016125869,0.00073472876,0.00020911529,0.000016938266,0.00023580647,0.00003743425,0.0005041873,0.96113133,0.0019306169,0.00049108296,0.034655422],"study_design_scores_gemma":[0.000015365415,0.0005845875,0.00505091,0.000045752287,0.000062444895,0.0022387654,0.00006918595,0.0065606073,0.9418772,0.00085702795,0.042615946,0.000022166472],"about_ca_topic_score_codex":0.0005849782,"about_ca_topic_score_gemma":0.001300551,"teacher_disagreement_score":0.0018397989,"about_ca_system_score_codex":0.0003849842,"about_ca_system_score_gemma":0.00022072963,"threshold_uncertainty_score":0.006154716},"labels":[],"label_agreement":null},{"id":"W2285940259","doi":"10.1149/06601.0233ecst","title":"Optically Transparent Flexible IGZO TFTs Fabricated with a Selective Wet-Etch Process","year":2015,"lang":"en","type":"article","venue":"ECS Transactions","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":2,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Materials science; Thin-film transistor; Flexible display; Optoelectronics; Fabrication; Threshold voltage; Transistor; Flexible electronics; Lift (data mining); Etching (microfabrication); Voltage; Nanotechnology; Electrical engineering; Computer science; Layer (electronics)","score_opus":0.02962900542605326,"score_gpt":0.24143155217878098,"score_spread":0.21180254675272772,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2285940259","genre_codex":"empirical","genre_gemma":"methods","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"methods","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.96810806,0.0005948982,0.026395528,0.00013269871,0.000111105735,0.000063928484,0.00048387045,0.00035533935,0.003754476],"genre_scores_gemma":[0.9628998,0.00057839416,0.03374967,0.00006834508,0.000023194618,0.000050661172,0.00029565324,0.000044261098,0.0022899574],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999453,0.0000023016123,0.0000028715413,0.0000145672675,0.000020964744,0.000014037516],"domain_scores_gemma":[0.9999535,0.000008068256,0.000013743832,0.000008247467,0.000009637485,0.0000067886276],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000078066354,0.0003034501,0.00016408827,0.00018007556,0.0001560676,0.00019081608,0.00028161192,0.00027631884,0.0007008974],"category_scores_gemma":[0.0001418389,0.0001631637,0.00017147309,0.00017278857,0.0002109629,0.00024941366,0.0001442633,0.00031154085,0.00027147227],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0000127748435,0.0000025827696,0.000044575107,0.0000129644895,0.0000014435683,0.000033141743,0.000010988129,0.0000302735,0.9990625,0.00003539108,0.00003335412,0.0007200774],"study_design_scores_gemma":[0.000010985838,0.00007250163,0.0016370735,0.0000035146015,0.000009511169,0.00016370763,0.000014613482,0.0009881576,0.99575555,0.000026834048,0.0013121829,0.000005338061],"about_ca_topic_score_codex":0.0009816136,"about_ca_topic_score_gemma":0.0014596225,"teacher_disagreement_score":0.0009816136,"about_ca_system_score_codex":0.00020391576,"about_ca_system_score_gemma":0.00013771778,"threshold_uncertainty_score":0.0023447275},"labels":[],"label_agreement":null},{"id":"W2293357470","doi":"10.1117/12.605363","title":"Current stress metastability in a-Si:H thin film transistors","year":2004,"lang":"en","type":"article","venue":"Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Metastability; Materials science; Thin-film transistor; Stress (linguistics); Transistor; Optoelectronics; Current (fluid); Engineering physics; Electrical engineering; Composite material; Physics; Engineering; Voltage; Layer (electronics)","score_opus":0.012342038826398083,"score_gpt":0.22287199096777374,"score_spread":0.21052995214137565,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2293357470","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99595094,0.0003788581,0.0029964428,0.00008670433,0.000010575822,0.000009427957,0.000054662145,0.00006114185,0.0004511531],"genre_scores_gemma":[0.9994023,0.00009221845,0.000322348,0.000007858349,0.00000548256,0.000004636219,0.000020003163,0.0000051169404,0.00013998547],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999269,0.000006504826,0.0000050932413,0.000018336466,0.000027254477,0.000015769438],"domain_scores_gemma":[0.9997961,0.00009047542,0.00005332987,0.000012197001,0.000029320701,0.000018706536],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0001529126,0.0002503273,0.00023397157,0.00023013998,0.0002968917,0.0003265553,0.0003211973,0.00041447632,0.0007417529],"category_scores_gemma":[0.0004483596,0.00013876746,0.00022331542,0.00020841738,0.00046593,0.00073254626,0.00019022242,0.00024638997,0.00012294698],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00023607118,0.00006264273,0.0057387194,0.000109788954,0.000026615895,0.000811739,0.0002549349,0.030483603,0.9563261,0.0013768171,0.00019275473,0.004380215],"study_design_scores_gemma":[0.000049758688,0.00088659854,0.013590044,0.000021466643,0.000041158783,0.0006297997,0.00023137504,0.42244804,0.55866945,0.002668906,0.00072546897,0.00003800765],"about_ca_topic_score_codex":0.0017771865,"about_ca_topic_score_gemma":0.0013264384,"teacher_disagreement_score":0.0017771865,"about_ca_system_score_codex":0.00053720316,"about_ca_system_score_gemma":0.00016840978,"threshold_uncertainty_score":0.003897667},"labels":[],"label_agreement":null},{"id":"W2299760211","doi":"10.1557/proc-762-a18.12","title":"Mechanical Stress and Process Integration of Direct X-ray Detector and TFT in a-Si:H Technology","year":2003,"lang":"en","type":"article","venue":"MRS Proceedings","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":2,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Materials science; Thin-film transistor; Optoelectronics; Schottky diode; Masking (illustration); Fabrication; Stress (linguistics); Sensitivity (control systems); Transistor; Diode; Layer (electronics); Electronic engineering; Nanotechnology; Electrical engineering","score_opus":0.007038625981488802,"score_gpt":0.20523030086579025,"score_spread":0.19819167488430145,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2299760211","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99598086,0.00041588498,0.0019644352,0.00007586146,0.00004658839,0.0000136330655,0.00011108318,0.00008055611,0.0013110898],"genre_scores_gemma":[0.996799,0.00010268607,0.0010933108,0.00001997659,0.000014394692,0.000009428527,0.000085511274,0.00001494315,0.0018608362],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.999747,0.000018979705,0.00001548644,0.000053709275,0.000105824554,0.000059002108],"domain_scores_gemma":[0.9995134,0.00009722711,0.00010464534,0.000053875538,0.00018741911,0.000043498498],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00023642734,0.00024647056,0.00022344214,0.00022966694,0.00030545052,0.0004582048,0.00057408155,0.0005357693,0.0020609687],"category_scores_gemma":[0.00067572115,0.00029931628,0.00017245016,0.00024775648,0.0003112383,0.0005782171,0.0002777345,0.00028584996,0.00033917226],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00051613647,0.00008886147,0.0037921786,0.00006902076,0.000021648575,0.00021419935,0.00016550512,0.0013340234,0.98704624,0.000621983,0.0002693604,0.0058608963],"study_design_scores_gemma":[0.000040491796,0.0013295596,0.02503569,0.000008717452,0.000035395697,0.0002335027,0.00013516458,0.007390459,0.9641473,0.0001970072,0.0014324668,0.000014261834],"about_ca_topic_score_codex":0.0017198618,"about_ca_topic_score_gemma":0.0036498846,"teacher_disagreement_score":0.0020609687,"about_ca_system_score_codex":0.0006191484,"about_ca_system_score_gemma":0.00036695966,"threshold_uncertainty_score":0.006894648},"labels":[],"label_agreement":null},{"id":"W2305430349","doi":"10.1149/ma2015-01/18/1279","title":"(Invited) Considerations for Materials, Processes, and Characterization of Flexible Electronics","year":2015,"lang":"en","type":"article","venue":"ECS Meeting Abstracts","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Miniaturization; Thin-film transistor; Electronics; Characterization (materials science); Materials science; Transistor; Flexible electronics; Nanotechnology; Printed electronics; Semiconductor; Organic semiconductor; Optoelectronics; Computer science; Electrical engineering; Engineering","score_opus":0.02498030188992552,"score_gpt":0.22484474997614634,"score_spread":0.19986444808622084,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2305430349","genre_codex":"editorial","genre_gemma":"review","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"review","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.007001954,0.20458011,0.05456808,0.20241387,0.35598418,0.0008995754,0.0010477268,0.001483548,0.17202091],"genre_scores_gemma":[0.03274814,0.12329402,0.039602898,0.044748105,0.13549681,0.0010872129,0.0011060506,0.0005942141,0.6213226],"study_design_codex":"not_applicable","study_design_gemma":"not_applicable","domain_scores_codex":[0.99867105,0.00016445336,0.00009202134,0.00013707324,0.00079979846,0.0001356728],"domain_scores_gemma":[0.99712366,0.00046460165,0.00014130025,0.00011081426,0.0017416058,0.0004179471],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0037907946,0.0009764489,0.00058307336,0.000990404,0.0009967729,0.0024426873,0.0015514888,0.0043961583,0.032240145],"category_scores_gemma":[0.0039901324,0.0005038264,0.0006768242,0.00060373725,0.00084992533,0.002462508,0.0011434398,0.003573817,0.024686452],"study_design_candidate":"not_applicable","study_design_consensus":"not_applicable","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00021087695,0.000107137654,0.00046726724,0.0011032599,0.000026137692,0.0004892095,0.00017423657,0.00078781863,0.016326124,0.0129405605,0.74741673,0.21995054],"study_design_scores_gemma":[0.000015952764,0.00009924334,0.00072047446,0.00020247167,0.000015359832,0.00041496023,0.00013796338,0.00041457594,0.0028155323,0.0052839885,0.9898504,0.000029077932],"about_ca_topic_score_codex":0.001611164,"about_ca_topic_score_gemma":0.003914991,"teacher_disagreement_score":0.032240145,"about_ca_system_score_codex":0.0011934203,"about_ca_system_score_gemma":0.0013537182,"threshold_uncertainty_score":0.10785407},"labels":[],"label_agreement":null},{"id":"W2312415035","doi":"10.1109/group4.2014.6961975","title":"ITO spacer for optimized plasmonic enhancement of aluminium nanocubes on a-Si solar cells","year":2014,"lang":"en","type":"article","venue":"","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Carleton University","funders":"","keywords":"Aluminium; Materials science; Plasmon; Absorption (acoustics); Nanoparticle; Solar cell; Silicon; Optoelectronics; Nanotechnology; Chemical engineering; Composite material","score_opus":0.008455146996925336,"score_gpt":0.19853163850995065,"score_spread":0.1900764915130253,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2312415035","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9979906,0.00022996581,0.00064017036,0.00002747336,0.00001716377,0.000010195347,0.000059043716,0.000043367534,0.0009821358],"genre_scores_gemma":[0.9966456,0.00022596435,0.002113065,0.00001811336,0.0000059664626,0.000012639858,0.00005979379,0.000029007299,0.00088981807],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99989593,0.0000066719654,0.000009795835,0.00002868541,0.000032927433,0.00002607108],"domain_scores_gemma":[0.9999,0.000023764178,0.000025970212,0.000008797862,0.000023355376,0.000018062221],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00008577378,0.00028838258,0.00028858168,0.0001397116,0.00019622082,0.00034889134,0.00037735453,0.00024963086,0.0011028586],"category_scores_gemma":[0.0001623706,0.00016430055,0.00019314741,0.00015455042,0.00009928423,0.00018124415,0.00019762284,0.00023569202,0.0003182816],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000049160306,0.000020038322,0.00004504394,0.000018617571,0.0000023625767,0.000022694443,0.000010873627,0.000094531875,0.99921024,0.000020832606,0.000018900497,0.0004866822],"study_design_scores_gemma":[0.000010114643,0.000084009545,0.00037774167,0.0000019864274,0.0000060645534,0.00001724947,0.000008398227,0.0011213067,0.9980798,0.0000053152407,0.0002861034,0.000001958154],"about_ca_topic_score_codex":0.0014266003,"about_ca_topic_score_gemma":0.0035073562,"teacher_disagreement_score":0.0014266003,"about_ca_system_score_codex":0.0004096514,"about_ca_system_score_gemma":0.00022559414,"threshold_uncertainty_score":0.003689468},"labels":[],"label_agreement":null},{"id":"W2312898965","doi":"10.1557/proc-0989-a19-05","title":"High Performance Hydrogenated Amorphous Silicon n-i-p Photo-diodes on Glass and Plastic Substrates by Low-temperature Fabrication Process","year":2007,"lang":"en","type":"article","venue":"MRS Proceedings","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":4,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Materials science; Diode; Fabrication; Amorphous silicon; Optoelectronics; Substrate (aquarium); Amorphous solid; Chemical vapor deposition; Quantum efficiency; Silicon; Layer (electronics); Plasma-enhanced chemical vapor deposition; Nanotechnology; Crystalline silicon; Crystallography","score_opus":0.004070417668375093,"score_gpt":0.1824730923668513,"score_spread":0.1784026746984762,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2312898965","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.980261,0.0011365295,0.0069894856,0.00020356406,0.00015700626,0.00008015509,0.00054863474,0.00038960544,0.010233952],"genre_scores_gemma":[0.98596627,0.00047426403,0.007613642,0.000032289558,0.000024093935,0.000048620426,0.0002337088,0.000067847934,0.005539196],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998838,0.000006141846,0.0000045842376,0.000023972181,0.00005787285,0.000023679999],"domain_scores_gemma":[0.99993145,0.000013480662,0.000012113455,0.000017785178,0.000015176126,0.00001000442],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00010968416,0.0002785887,0.00035416512,0.00017750564,0.0003872221,0.00041890968,0.00057223806,0.00022198966,0.001617546],"category_scores_gemma":[0.00014016608,0.0003175442,0.00018777738,0.00021296204,0.00024611314,0.00037341364,0.00031596544,0.00042421182,0.0004543783],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000040047762,0.000009801499,0.00013131407,0.000055208966,0.000007736709,0.00007070081,0.00004326563,0.00018359357,0.9973857,0.000304301,0.00032283535,0.0014454036],"study_design_scores_gemma":[0.00001571672,0.00007648145,0.0018388785,0.0000048966867,0.000008337803,0.00008995145,0.000027321164,0.00082284294,0.99475706,0.00006865652,0.002280882,0.000008881827],"about_ca_topic_score_codex":0.0011889288,"about_ca_topic_score_gemma":0.0040415293,"teacher_disagreement_score":0.001617546,"about_ca_system_score_codex":0.00041104833,"about_ca_system_score_gemma":0.00033405877,"threshold_uncertainty_score":0.0054112673},"labels":[],"label_agreement":null},{"id":"W2314095772","doi":"10.1557/proc-609-a16.1","title":"Self-interstitials have never been observed in crystalline Si. How about amorphous Si?","year":2000,"lang":"en","type":"article","venue":"MRS Proceedings","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Université de Montréal","funders":"","keywords":"Materials science; Amorphous solid; Amorphous silicon; Silicon; Impurity; Chemical physics; Crystallographic defect; Diffusion; Crystalline silicon; Crystallography; Optoelectronics; Thermodynamics","score_opus":0.014026007801347619,"score_gpt":0.1941640480336972,"score_spread":0.18013804023234958,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2314095772","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.8907166,0.024716418,0.02814289,0.0039827423,0.0018427379,0.000044794146,0.0004590423,0.00058164843,0.049513105],"genre_scores_gemma":[0.9749518,0.0055054575,0.008886129,0.00075802876,0.00022265653,0.000021544593,0.00039601448,0.00008007138,0.00917831],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999043,0.000007866985,0.0000059668487,0.000031081785,0.000032248514,0.000018519522],"domain_scores_gemma":[0.99954104,0.00014960305,0.00007712871,0.00009657938,0.00010354067,0.000032142125],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00018403938,0.00013488674,0.00021909794,0.00026957988,0.0006541391,0.0006114059,0.00048519654,0.00076793646,0.002050412],"category_scores_gemma":[0.0008768201,0.00018185421,0.00019089287,0.00035677588,0.0009794636,0.0012728397,0.0003501075,0.00070501777,0.00041674866],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00056172174,0.00011922906,0.026154298,0.0028984945,0.0001803472,0.004022436,0.0023269001,0.00097296,0.8083446,0.049007103,0.008597986,0.09681392],"study_design_scores_gemma":[0.000050642473,0.00044916297,0.02274216,0.00026590237,0.00017791995,0.007101713,0.002261207,0.0016735246,0.8025243,0.030345617,0.13229193,0.00011587226],"about_ca_topic_score_codex":0.00091615133,"about_ca_topic_score_gemma":0.002280107,"teacher_disagreement_score":0.002050412,"about_ca_system_score_codex":0.00017026598,"about_ca_system_score_gemma":0.00022481814,"threshold_uncertainty_score":0.006859243},"labels":[],"label_agreement":null},{"id":"W2314880428","doi":"10.1557/proc-1153-a16-03","title":"Infrared Ellipsometry Investigation of Hydrogenated Amorphous Silicon","year":2009,"lang":"en","type":"article","venue":"MRS Proceedings","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Toronto; Ontario Tech University","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Materials science; Ellipsometry; Fourier transform infrared spectroscopy; Analytical Chemistry (journal); Infrared; Infrared spectroscopy; Silicon; Amorphous silicon; Amorphous solid; Raman spectroscopy; Thin film; Optoelectronics; Optics; Crystalline silicon; Nanotechnology; Crystallography; Chemistry; Organic chemistry","score_opus":0.008029931791036537,"score_gpt":0.1840855816561617,"score_spread":0.17605564986512517,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2314880428","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99765176,0.0002925225,0.0006661256,0.000026179334,0.000009892549,0.0000036778613,0.000076870965,0.000014301762,0.0012587117],"genre_scores_gemma":[0.99789965,0.00012710513,0.0006715412,0.000010653237,0.0000043724635,0.0000021763165,0.00010296586,0.000005844054,0.0011756672],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999012,0.000008808031,0.000004647584,0.000019779061,0.00004851769,0.000017069198],"domain_scores_gemma":[0.9998361,0.00005649536,0.000026670972,0.000023514525,0.00004760286,0.000009623982],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00013945099,0.00012569573,0.00014643185,0.00022047956,0.00020991212,0.00019555513,0.00033392187,0.00025324375,0.0012757034],"category_scores_gemma":[0.00025697998,0.00009805115,0.00010269541,0.00022309089,0.0002667135,0.00025568396,0.00016105763,0.00027081923,0.00016708732],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00011991248,0.000015983162,0.00053412275,0.000026940752,0.0000050974686,0.00009178722,0.000062843465,0.00011577933,0.9969522,0.00016255147,0.0000584676,0.0018542606],"study_design_scores_gemma":[0.000007730241,0.00013077867,0.0076451823,0.00000310096,0.000008571993,0.00016522895,0.00009916115,0.0024194117,0.98843175,0.000043141245,0.0010405307,0.0000053803756],"about_ca_topic_score_codex":0.0007571753,"about_ca_topic_score_gemma":0.0007966741,"teacher_disagreement_score":0.0012757034,"about_ca_system_score_codex":0.00015087683,"about_ca_system_score_gemma":0.00010412045,"threshold_uncertainty_score":0.0042676926},"labels":[],"label_agreement":null},{"id":"W2315665819","doi":"10.1149/ma2014-02/47/1914","title":"Gate Insulator for High Mobility Oxide TFT","year":2014,"lang":"en","type":"article","venue":"ECS Meeting Abstracts","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Kootenay Association for Science & Technology","funders":"","keywords":"Thin-film transistor; Materials science; Oxide thin-film transistor; Optoelectronics; Gate dielectric; Annealing (glass); Transistor; Gate oxide; Dielectric; Electron mobility; Insulator (electricity); Electrode; Active layer; High-κ dielectric; Layer (electronics); Electrical engineering; Nanotechnology; Chemistry; Composite material; Voltage","score_opus":0.009931392571828212,"score_gpt":0.20605683866967073,"score_spread":0.19612544609784252,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2315665819","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.7003611,0.026166636,0.14366555,0.0024423175,0.0034472102,0.00031163907,0.0056789056,0.0044829207,0.1134438],"genre_scores_gemma":[0.92095035,0.0051725945,0.043287065,0.0006642835,0.0002447604,0.000080366466,0.0029543273,0.00014279784,0.02650355],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999248,0.0000034297602,0.000002195505,0.000021577627,0.000030663316,0.000017461869],"domain_scores_gemma":[0.99996924,0.0000057732727,0.0000055633814,0.0000040019663,0.000008017017,0.000007353657],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000050754614,0.00019006812,0.00016039128,0.00011384294,0.00019867538,0.0002973795,0.00027866362,0.0002900104,0.0047440985],"category_scores_gemma":[0.00010603057,0.000057888978,0.0002119298,0.00018106091,0.00011276296,0.00032719196,0.00014556594,0.000358321,0.0017137423],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000081527745,0.00002721561,0.0004902818,0.00018489713,0.000013423365,0.0002714284,0.000026060194,0.00027188566,0.96604764,0.0019692667,0.004461162,0.026155116],"study_design_scores_gemma":[0.00003962047,0.00057576544,0.0033462504,0.000024552932,0.000042232485,0.00094478443,0.000036810474,0.0060621835,0.86837286,0.0012291046,0.119305566,0.000020234113],"about_ca_topic_score_codex":0.00039145732,"about_ca_topic_score_gemma":0.00074873614,"teacher_disagreement_score":0.0047440985,"about_ca_system_score_codex":0.00036914312,"about_ca_system_score_gemma":0.00013363468,"threshold_uncertainty_score":0.01587063},"labels":[],"label_agreement":null},{"id":"W2317099307","doi":"10.1557/opl.2011.1089","title":"Temperature Induced Evolution of Bond-Centered Hydrogen (BCH) Defects in Crystalline Silicon: Dynamical, Electronic, Vibrational and Optical Signatures","year":2011,"lang":"en","type":"article","venue":"MRS Proceedings","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Ontario Tech University","funders":"","keywords":"BCH code; Materials science; Deep-level transient spectroscopy; Band gap; Silicon; Hydrogen; Molecular physics; Atomic physics; Chemistry; Optoelectronics; Physics","score_opus":0.008481985773699494,"score_gpt":0.18726537506229066,"score_spread":0.17878338928859117,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2317099307","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9985556,0.00007564965,0.00035642317,0.000031822925,0.0000051051607,0.000002110986,0.000045767014,0.000015471822,0.0009119905],"genre_scores_gemma":[0.99963224,0.000021247355,0.0000743305,0.0000065408803,0.0000019270487,0.000001063846,0.00003236083,0.0000035630894,0.00022682615],"study_design_codex":"bench_or_experimental","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9999629,0.0000032254172,8.8286885e-7,0.00000996192,0.000012081003,0.000010981325],"domain_scores_gemma":[0.9998529,0.000056598503,0.000035817113,0.000011665536,0.000024096771,0.000019015342],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000069599315,0.00009789904,0.0000828178,0.00022849273,0.00016207393,0.00022942683,0.00019984362,0.00018732887,0.0019489743],"category_scores_gemma":[0.00025635376,0.000109768494,0.000079639816,0.00014974042,0.00053924264,0.0002470823,0.00011921703,0.00034082195,0.00010588255],"study_design_candidate":"simulation_or_modeling","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0004152916,0.000086422275,0.005061109,0.00004017388,0.000020807536,0.00020796616,0.00021758696,0.001264974,0.9872908,0.0014163036,0.00030078474,0.0036776466],"study_design_scores_gemma":[0.00005824305,0.00038378552,0.078093916,0.000010136309,0.000025945636,0.00035277635,0.00042601392,0.026790733,0.8918828,0.0009948717,0.00094121887,0.000039564296],"about_ca_topic_score_codex":0.0008680778,"about_ca_topic_score_gemma":0.0010289699,"teacher_disagreement_score":0.0019489743,"about_ca_system_score_codex":0.00022582055,"about_ca_system_score_gemma":0.00009813804,"threshold_uncertainty_score":0.0065199733},"labels":[],"label_agreement":null},{"id":"W2319909015","doi":"10.1149/1.3481238","title":"(Invited) Nanocrystalline Silicon Thin Film Transistors","year":2010,"lang":"en","type":"article","venue":"ECS Transactions","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"IGNIS Innovation (Canada)","funders":"Engineering and Physical Sciences Research Council; Natural Sciences and Engineering Research Council of Canada; Royal Society","keywords":"Thin-film transistor; Materials science; Oxide thin-film transistor; Optoelectronics; Gate dielectric; Nanocrystalline silicon; Amorphous silicon; Gate oxide; Crystallinity; Silicon; Amorphous solid; Dielectric; Nanocrystalline material; Silicon nitride; Transistor; Active layer; High-κ dielectric; Layer (electronics); Nanotechnology; Electrical engineering; Crystalline silicon; Crystallography; Composite material; Chemistry","score_opus":0.006486653435084777,"score_gpt":0.18825426337010706,"score_spread":0.18176760993502228,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2319909015","genre_codex":"review","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.0070645427,0.5812937,0.005868344,0.035177097,0.27693734,0.00022574027,0.001073495,0.00049412076,0.0918656],"genre_scores_gemma":[0.022944147,0.34778878,0.0045797285,0.026789945,0.12149023,0.00024668663,0.0014359872,0.00019266193,0.4745318],"study_design_codex":"not_applicable","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9997048,0.000021254065,0.000019919218,0.000085274645,0.00011640909,0.000052283827],"domain_scores_gemma":[0.9996159,0.000053586766,0.000022688939,0.000012752212,0.00021093136,0.00008412712],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00049495575,0.00093143363,0.00060998945,0.00072249275,0.00041538448,0.0010359994,0.000854508,0.0017879852,0.021397825],"category_scores_gemma":[0.00056734245,0.00022029318,0.00041035571,0.00071754755,0.00028086518,0.0014033581,0.00061065634,0.0013103219,0.020235557],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0001765062,0.00008033548,0.0005266935,0.0016221963,0.000041327574,0.00034768565,0.00006932329,0.0003741552,0.0101237465,0.0018549868,0.7141113,0.2706717],"study_design_scores_gemma":[0.00001025483,0.00005926356,0.0006113045,0.00010375271,0.000022208114,0.0002911299,0.00003486714,0.00013784948,0.0019191728,0.0006273209,0.9961725,0.00001042087],"about_ca_topic_score_codex":0.001146385,"about_ca_topic_score_gemma":0.0038573197,"teacher_disagreement_score":0.021397825,"about_ca_system_score_codex":0.00059475197,"about_ca_system_score_gemma":0.0003614613,"threshold_uncertainty_score":0.071582854},"labels":[],"label_agreement":null},{"id":"W2320639255","doi":"10.1109/nano.2014.6968080","title":"Efficiency enhancement of a-Si solar cells by nonresonant plasmonic aluminium nanocubes","year":2014,"lang":"en","type":"article","venue":"","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Carleton University","funders":"","keywords":"Materials science; Aluminium; Plasmon; Plasmonic solar cell; Silicon; Amorphous silicon; Optoelectronics; Absorption (acoustics); Solar cell; Nanoparticle; Amorphous solid; Surface plasmon resonance; Surface plasmon; Trapping; Silicon solar cell; Nanotechnology; Monocrystalline silicon; Crystalline silicon; Metallurgy; Composite material; Chemistry","score_opus":0.0040926778414705,"score_gpt":0.1736077693626342,"score_spread":0.1695150915211637,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2320639255","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9970131,0.00030965134,0.0008095186,0.000030040082,0.000011285677,0.0000051078196,0.000042113523,0.000056546152,0.0017226862],"genre_scores_gemma":[0.99760383,0.0002523255,0.0011292499,0.000015871994,0.000003892412,0.0000061401843,0.00003189199,0.00001688099,0.00093983265],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999074,0.000007102893,0.000008163001,0.000020672776,0.000034490116,0.000022330485],"domain_scores_gemma":[0.99989223,0.000041020696,0.000017875962,0.000010178843,0.00002842906,0.000010197118],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00008778566,0.0002303841,0.00025785886,0.00014435287,0.000139037,0.0003849517,0.00026854785,0.00024297928,0.0008482307],"category_scores_gemma":[0.00015083411,0.00015456944,0.0002119977,0.00014193672,0.00015900042,0.00022809395,0.00015017496,0.00022831393,0.00034505595],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00003989293,0.000016479424,0.00012208261,0.000020295396,0.0000043914065,0.00002838542,0.000015864074,0.00024307407,0.9984831,0.000043493874,0.000031540665,0.00095141755],"study_design_scores_gemma":[0.0000048390907,0.000058423404,0.0004575348,0.0000013431161,0.0000048606717,0.00001657015,0.000010416939,0.0016398559,0.9976198,0.000011558289,0.00017308944,0.0000017225505],"about_ca_topic_score_codex":0.0011042383,"about_ca_topic_score_gemma":0.002046646,"teacher_disagreement_score":0.0011042383,"about_ca_system_score_codex":0.00032263147,"about_ca_system_score_gemma":0.000092140595,"threshold_uncertainty_score":0.0028375983},"labels":[],"label_agreement":null},{"id":"W2321135493","doi":"10.1002/j.2168-0159.2014.tb00296.x","title":"P‐44: Master‐Slave Pixel Concept Used for Improved Sensor‐Display Array Circuits on Flexible Substrates","year":2014,"lang":"en","type":"article","venue":"SID Symposium Digest of Technical Papers","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Pixel; Backplane; Dot pitch; Electronic circuit; Photodetector; Image sensor; LED display; Computer science; Computer hardware; Electrical engineering; Optoelectronics; Materials science; Artificial intelligence; Engineering","score_opus":0.012504448141165697,"score_gpt":0.2193657941010182,"score_spread":0.2068613459598525,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2321135493","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.928361,0.00049299904,0.06501994,0.00019182682,0.00013282616,0.000078542886,0.00011793022,0.00062388,0.0049810647],"genre_scores_gemma":[0.955224,0.00012980813,0.0415895,0.000047539314,0.000022404729,0.000034169552,0.000057213896,0.000029285493,0.0028660703],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999243,0.00000646426,0.0000030377632,0.000024682444,0.000028782739,0.000012818083],"domain_scores_gemma":[0.99993,0.000012934791,0.000010846876,0.000012498222,0.000019941936,0.000013778602],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0001232751,0.00016480124,0.00019361131,0.00010149464,0.00019153758,0.00030193676,0.0005565189,0.00030357105,0.0017224426],"category_scores_gemma":[0.00014178833,0.00013988743,0.00016246276,0.00011999016,0.00020313312,0.00033596516,0.00019793435,0.00033722323,0.00028053336],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000040053466,0.000019861573,0.00018500446,0.000030309378,0.0000049576233,0.000069175636,0.000024917623,0.00039682933,0.99368423,0.0008264405,0.00019554106,0.004522601],"study_design_scores_gemma":[0.000027121298,0.00032640717,0.0015009475,0.0000036575952,0.000011651649,0.00032022703,0.000012432497,0.015497605,0.9774695,0.000162257,0.004659633,0.000008522781],"about_ca_topic_score_codex":0.0003426807,"about_ca_topic_score_gemma":0.00037584058,"teacher_disagreement_score":0.0017224426,"about_ca_system_score_codex":0.00024314357,"about_ca_system_score_gemma":0.00019332707,"threshold_uncertainty_score":0.00576216},"labels":[],"label_agreement":null},{"id":"W2322821788","doi":"10.1557/proc-1153-a18-03","title":"First-principles Modeling of Structure, Vibrations, Electronic Properties and Bond Dynamics in Hydrogenated Amorphous Silicon: Theory versus Experiment","year":2009,"lang":"en","type":"article","venue":"MRS Proceedings","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Ontario Tech University","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Materials science; Amorphous silicon; Silicon; Chemical physics; Molecular dynamics; Electronic structure; Amorphous solid; Density functional theory; Nanotechnology; Crystalline silicon; Computational chemistry; Crystallography; Chemistry; Optoelectronics","score_opus":0.015641920297494612,"score_gpt":0.1950952940279653,"score_spread":0.17945337373047068,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2322821788","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.75111353,0.0017531059,0.19035704,0.0019223305,0.00022951498,0.00017496783,0.00066696963,0.0007419808,0.053040583],"genre_scores_gemma":[0.98195845,0.0004831612,0.0138003575,0.00013476751,0.000036728597,0.000113589784,0.00016617951,0.000070883776,0.0032358565],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99982256,0.00004699732,0.0000050721733,0.000020299743,0.00007339929,0.000031599302],"domain_scores_gemma":[0.999613,0.00022462137,0.000027135997,0.000058360136,0.00005294574,0.00002397529],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0006254796,0.00058892806,0.0010027736,0.0003901939,0.0007166854,0.00084772246,0.0020561903,0.0014902828,0.0021158676],"category_scores_gemma":[0.00092336803,0.00043565696,0.0005945641,0.0005044807,0.001257292,0.0013853085,0.00038488876,0.0009777485,0.00020015654],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00009681343,0.00013935579,0.0005271163,0.00017188034,0.000029082861,0.000114310205,0.00012458685,0.9296795,0.0076754084,0.055903412,0.00072125625,0.0048173233],"study_design_scores_gemma":[0.000014772209,0.000012823906,0.000098296034,0.0000030108315,0.0000025025313,0.0000048453003,0.000012419427,0.99423826,0.00050244125,0.0049987994,0.000107778906,0.0000040782497],"about_ca_topic_score_codex":0.003769523,"about_ca_topic_score_gemma":0.003083789,"teacher_disagreement_score":0.003769523,"about_ca_system_score_codex":0.00075944903,"about_ca_system_score_gemma":0.0008352379,"threshold_uncertainty_score":0.007495165},"labels":[],"label_agreement":null},{"id":"W2323364057","doi":"10.1557/proc-1030-g07-07","title":"Poly and Nano-crystalline High Electron Mobility Thin Film Transistors on Plastic Substrates for Large Area Applications","year":2007,"lang":"en","type":"article","venue":"MRS Proceedings","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Acadia University","funders":"Iran National Science Foundation","keywords":"Materials science; Thin-film transistor; Crystallization; Amorphous silicon; Crystallinity; Polyethylene terephthalate; Silane; Silicon; Optoelectronics; Nanocrystalline silicon; Oxide thin-film transistor; Amorphous solid; Scanning electron microscope; Thin film; Chemical engineering; Layer (electronics); Silicon oxide; Electron mobility; Nanotechnology; Composite material; Crystalline silicon; Crystallography; Silicon nitride","score_opus":0.007385058580853474,"score_gpt":0.20652557575266794,"score_spread":0.19914051717181447,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2323364057","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9278764,0.007916333,0.023366962,0.0010131731,0.0006701316,0.00008992187,0.0006653908,0.0004926447,0.03790905],"genre_scores_gemma":[0.953231,0.0034839164,0.015411465,0.00016014937,0.00009471006,0.00006303163,0.0004757117,0.00012143874,0.02695863],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999416,0.0000044543312,0.0000034091363,0.000010749162,0.00002713555,0.00001261765],"domain_scores_gemma":[0.99991465,0.000026256686,0.000014219504,0.000018923023,0.00001452875,0.000011409447],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00009584351,0.00017066712,0.00019084828,0.00020369054,0.00020486329,0.00050490064,0.00031459896,0.0002518203,0.0041126413],"category_scores_gemma":[0.0001663697,0.00023605005,0.00011649478,0.00023189727,0.0001677295,0.0005647899,0.00020537962,0.00035087738,0.00078287866],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00005705029,0.00001817818,0.00021350294,0.00009817113,0.000007412681,0.00010674133,0.000026909433,0.0004090678,0.9907925,0.00157453,0.000943836,0.005751974],"study_design_scores_gemma":[0.00002026354,0.00013152375,0.0025186394,0.000015650612,0.000012232401,0.00018008774,0.0000669064,0.0045762775,0.9819124,0.00069814373,0.009857545,0.000010271951],"about_ca_topic_score_codex":0.00028777527,"about_ca_topic_score_gemma":0.0013892964,"teacher_disagreement_score":0.0041126413,"about_ca_system_score_codex":0.0001904687,"about_ca_system_score_gemma":0.00017405888,"threshold_uncertainty_score":0.013758123},"labels":[],"label_agreement":null},{"id":"W2326569353","doi":"10.1557/proc-808-a4.14","title":"Intrinsic and Doped m c-Si:H TFT Layers using 13.56 MHz PECVD at 250°C","year":2004,"lang":"en","type":"article","venue":"MRS Proceedings","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Natural Sciences and Engineering Research Council of Canada; University of Waterloo","keywords":"Materials science; Plasma-enhanced chemical vapor deposition; Thin-film transistor; Silane; Crystallinity; Analytical Chemistry (journal); Chemical vapor deposition; Amorphous solid; Conductivity; Doping; Silicon; Threshold voltage; Thin film; Layer (electronics); Optoelectronics; Nanotechnology; Transistor; Crystallography; Composite material; Electrical engineering; Chemistry; Voltage","score_opus":0.012746856810019075,"score_gpt":0.20112617692830895,"score_spread":0.18837932011828987,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2326569353","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9773817,0.0009963925,0.011440279,0.00017506456,0.0001329609,0.000039834555,0.0008411141,0.00025568268,0.008736966],"genre_scores_gemma":[0.9826879,0.0006024936,0.0074796807,0.000057416448,0.000028538367,0.00003571885,0.00093127415,0.00011774115,0.008059307],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99982065,0.0000086910195,0.0000071639224,0.00006230166,0.00003688222,0.00006436896],"domain_scores_gemma":[0.99989164,0.000034458048,0.00001062112,0.000017795175,0.000037297992,0.000008153139],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00016365045,0.00037879983,0.00032848498,0.00021446198,0.00065343437,0.0004530136,0.0004070472,0.00049257354,0.0025408717],"category_scores_gemma":[0.00029781702,0.00023034874,0.00016584291,0.0004481304,0.0003111369,0.00040519892,0.00015025919,0.00061437825,0.00054060126],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00014521406,0.000017463728,0.00025735013,0.000040415813,0.000012179119,0.0000712621,0.0000905301,0.00012294974,0.9970601,0.00019643267,0.00021344861,0.0017725679],"study_design_scores_gemma":[0.000009165426,0.00006332665,0.0013622033,0.0000055780597,0.0000149292555,0.000100650745,0.00003952535,0.0011193528,0.99534047,0.000063287465,0.0018760376,0.0000054892134],"about_ca_topic_score_codex":0.0049926457,"about_ca_topic_score_gemma":0.010302809,"teacher_disagreement_score":0.0049926457,"about_ca_system_score_codex":0.00067584676,"about_ca_system_score_gemma":0.00032224934,"threshold_uncertainty_score":0.009927154},"labels":[],"label_agreement":null},{"id":"W2327085935","doi":"10.1557/proc-1153-a07-05","title":"Hydrogenated Amorphous Silicon Based Solar Cells: Optimization Formalism and Numerical Algorithm","year":2009,"lang":"en","type":"article","venue":"MRS Proceedings","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Ontario Tech University","funders":"","keywords":"Amorphous silicon; Materials science; Formalism (music); Thin film solar cell; Silicon; Doping; Optoelectronics; Photovoltaics; Solar cell; Amorphous solid; Thin film; Photovoltaic system; Crystalline silicon; Nanotechnology; Crystallography; Electrical engineering; Chemistry; Engineering","score_opus":0.004596196302858641,"score_gpt":0.17346363443127258,"score_spread":0.16886743812841393,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2327085935","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.032282162,0.00086828496,0.9414307,0.0008251401,0.00009849758,0.00010436031,0.00024160268,0.00017114934,0.023978036],"genre_scores_gemma":[0.58232826,0.0012510665,0.39584664,0.00040860166,0.00011133293,0.00053810526,0.0004934086,0.0002637273,0.018758802],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9998783,0.000051935112,0.000005559926,0.000012422689,0.00004105875,0.000010713809],"domain_scores_gemma":[0.9996406,0.00021979478,0.000026811258,0.000028868933,0.0000703247,0.0000136515],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0007301247,0.00037450937,0.000724974,0.000303931,0.00041538588,0.0010775719,0.0011637649,0.0012405792,0.002559042],"category_scores_gemma":[0.0017076569,0.00046563323,0.00043815063,0.00073780114,0.00058739376,0.0008613056,0.0006077399,0.0009243675,0.00040048297],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000015316213,0.000019983712,0.00013067605,0.000038377344,0.000014378265,0.000026369646,0.000014662803,0.96151173,0.0006470014,0.032822963,0.0005407729,0.00421771],"study_design_scores_gemma":[0.0000058569126,0.00000229339,0.000025627682,0.000002718994,0.0000016887658,0.0000025132006,0.0000032799237,0.9952657,0.00010652203,0.004312561,0.00026948622,0.0000017334726],"about_ca_topic_score_codex":0.006351443,"about_ca_topic_score_gemma":0.0069157095,"teacher_disagreement_score":0.006351443,"about_ca_system_score_codex":0.0007907008,"about_ca_system_score_gemma":0.0009893399,"threshold_uncertainty_score":0.0126289725},"labels":[],"label_agreement":null},{"id":"W2328045323","doi":"10.1149/1.2908630","title":"a-Si:H Metal-Semiconductor-Metal (MSM) Photoconductor Detector for Biomolecular Imaging Applications","year":2008,"lang":"en","type":"article","venue":"ECS Transactions","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Photodiode; Materials science; Fabrication; Responsivity; Optoelectronics; Active matrix; Diode; Semiconductor; Silicon; Amorphous silicon; Photodetector; Thin-film transistor; Optics; Layer (electronics); Nanotechnology; Crystalline silicon; Physics","score_opus":0.01785937720293763,"score_gpt":0.22383438819200305,"score_spread":0.20597501098906543,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2328045323","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.78757477,0.00753981,0.19468458,0.0005919374,0.00023258748,0.00018324096,0.0008126342,0.0019603572,0.0064200605],"genre_scores_gemma":[0.8526188,0.0013461099,0.14116894,0.00013088061,0.00006414818,0.00006878387,0.00019339951,0.0000325737,0.004376312],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99986815,0.0000177349,0.00000830071,0.000035619887,0.000059748243,0.000010379461],"domain_scores_gemma":[0.9998122,0.000079192774,0.000030854866,0.000017442711,0.00004163947,0.00001875666],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00026852122,0.00028052158,0.00024621218,0.0002361356,0.00025231563,0.00029161657,0.00063741475,0.00039784066,0.0012789998],"category_scores_gemma":[0.0002568046,0.00017196052,0.00015576625,0.00025064277,0.00016567395,0.00030994904,0.00020416324,0.0003216898,0.0004362568],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00005080489,0.000012857548,0.00041038115,0.000058847934,0.0000057930965,0.00006240509,0.00001608569,0.00011518614,0.98801804,0.00038304421,0.00023505457,0.010631543],"study_design_scores_gemma":[0.0000063447487,0.00020842544,0.0010880834,0.0000040150267,0.000013484031,0.000459971,0.000015053142,0.004954912,0.9900497,0.00012615988,0.0030678788,0.0000059338645],"about_ca_topic_score_codex":0.00030868457,"about_ca_topic_score_gemma":0.00082687946,"teacher_disagreement_score":0.0012789998,"about_ca_system_score_codex":0.00028795504,"about_ca_system_score_gemma":0.0002580753,"threshold_uncertainty_score":0.00427866},"labels":[],"label_agreement":null},{"id":"W2328990143","doi":"10.1557/proc-762-a6.10","title":"Influence of Hydrogen Dilution on Properties of Silicon Films Prepared by D.C. Saddle-Field Glow-Discharge: Observation of Microcrystallinity","year":2003,"lang":"en","type":"article","venue":"MRS Proceedings","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":8,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Toronto","funders":"","keywords":"Materials science; Glow discharge; Silane; High-resolution transmission electron microscopy; Raman spectroscopy; Analytical Chemistry (journal); Microcrystalline silicon; Amorphous solid; Nanocrystalline silicon; Amorphous silicon; Crystallite; Thin film; Silicon; Crystalline silicon; Nanotechnology; Plasma; Composite material; Crystallography; Optoelectronics; Optics; Transmission electron microscopy; Metallurgy","score_opus":0.013974634352319958,"score_gpt":0.19480046855831076,"score_spread":0.1808258342059908,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2328990143","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9984497,0.00029484756,0.0002829273,0.00005026757,0.0000062534277,0.000005783376,0.00008808261,0.000013496394,0.00080855284],"genre_scores_gemma":[0.9989231,0.00016711843,0.00024956826,0.000027561831,0.0000049382143,0.000005075315,0.00009593731,0.000016364314,0.0005103819],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998759,0.000019935856,0.000008711756,0.000027103844,0.000034940465,0.00003342983],"domain_scores_gemma":[0.99952006,0.00031831328,0.00005148724,0.00003494406,0.000045725756,0.000029503712],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00023240523,0.00020354203,0.00024293989,0.000100317375,0.00021854254,0.000436303,0.00026636687,0.0002933496,0.0017497203],"category_scores_gemma":[0.0006624928,0.00023441613,0.00011155103,0.00013755124,0.00043714288,0.00029234396,0.00015152157,0.0004239789,0.00026530263],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00038009582,0.000015537322,0.00035145943,0.000026671332,0.000009418947,0.00008597205,0.00006388237,0.000098179706,0.9980737,0.000050067298,0.000033089025,0.000811822],"study_design_scores_gemma":[0.000020470732,0.00008692768,0.0015724439,0.0000019630613,0.0000053343374,0.000034823388,0.000020248863,0.0003157135,0.9977169,0.000009527259,0.00021262853,0.0000030103045],"about_ca_topic_score_codex":0.0014611704,"about_ca_topic_score_gemma":0.0018000347,"teacher_disagreement_score":0.0017497203,"about_ca_system_score_codex":0.00034303762,"about_ca_system_score_gemma":0.00018638333,"threshold_uncertainty_score":0.0058534145},"labels":[],"label_agreement":null},{"id":"W2329920963","doi":"10.1557/opl.2011.953","title":"Influence of the Electrode Spacing on the Plasma Characteristics and Hydrogenated Amorphous Silicon Film Properties Grown in the DC Saddle Field PECVD System","year":2011,"lang":"en","type":"article","venue":"MRS Proceedings","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Toronto","funders":"Ontario Centres of Excellence","keywords":"Materials science; Plasma-enhanced chemical vapor deposition; Silane; Substrate (aquarium); Plasma; Amorphous silicon; Silicon; Ion; Deposition (geology); Electrode; Analytical Chemistry (journal); Cathode; Optoelectronics; Composite material; Crystalline silicon; Electrical engineering","score_opus":0.012735546396930806,"score_gpt":0.15583385289348087,"score_spread":0.14309830649655006,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2329920963","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9980129,0.0002178289,0.0007337409,0.00004292088,0.000017090177,0.0000029684882,0.000071271585,0.000027903963,0.0008734113],"genre_scores_gemma":[0.9989373,0.00012730867,0.0003331712,0.000012350122,0.000008568936,0.0000027221051,0.00007613121,0.000016186701,0.00048615597],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998889,0.00001927868,0.0000078024805,0.000029371005,0.00002711371,0.00002758819],"domain_scores_gemma":[0.99919647,0.00053085946,0.00007209113,0.000056588917,0.0000879541,0.00005613071],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0002436546,0.000203736,0.00022157456,0.00015820011,0.00022951393,0.0005958249,0.00022518219,0.0002520848,0.0018410797],"category_scores_gemma":[0.0008727995,0.00023297587,0.00008664255,0.00022859775,0.0002395516,0.0003331444,0.00017216659,0.00034280485,0.00029348445],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00053907535,0.000035881523,0.0007319296,0.000050516097,0.000012650312,0.00015278782,0.00007550688,0.0007184056,0.9956214,0.00015486787,0.000080663856,0.001826259],"study_design_scores_gemma":[0.000045449233,0.00036490292,0.0046294047,0.0000058473706,0.000021612703,0.0001226355,0.00010831837,0.0024049133,0.9915673,0.0000696838,0.0006517002,0.000008332534],"about_ca_topic_score_codex":0.00033277555,"about_ca_topic_score_gemma":0.0005092242,"teacher_disagreement_score":0.0018410797,"about_ca_system_score_codex":0.00019901627,"about_ca_system_score_gemma":0.0002331743,"threshold_uncertainty_score":0.0061590075},"labels":[],"label_agreement":null},{"id":"W2329987319","doi":"10.1557/proc-0989-a06-19","title":"Low Temperature Epitaxy of n-Doped Silicon Thin Films Using Plasma Enhanced Chemical Vapor Deposition","year":2007,"lang":"en","type":"article","venue":"MRS Proceedings","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Materials science; High-resolution transmission electron microscopy; Plasma-enhanced chemical vapor deposition; Thin film; Epitaxy; Chemical vapor deposition; Silicon; Analytical Chemistry (journal); Combustion chemical vapor deposition; Doping; Raman spectroscopy; Hydrogen; Transmission electron microscopy; Optoelectronics; Carbon film; Nanotechnology; Optics; Chemistry","score_opus":0.007269495792109795,"score_gpt":0.20749637972305396,"score_spread":0.20022688393094418,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2329987319","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9762526,0.0020021077,0.0076920018,0.0004257338,0.00019456413,0.00005811895,0.00032835483,0.00027862558,0.0127678625],"genre_scores_gemma":[0.97609043,0.0011639007,0.009439497,0.000116316885,0.00004723995,0.00004825945,0.00030265347,0.0000975664,0.012694132],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999132,0.0000047584363,0.000003461714,0.000015595318,0.000046180445,0.00001680206],"domain_scores_gemma":[0.9999238,0.0000241461,0.0000148112595,0.000011478594,0.000015418864,0.000010331074],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00010060975,0.0002255666,0.00032255118,0.00019592934,0.0002497192,0.00040063495,0.00044208107,0.00032909086,0.0013224971],"category_scores_gemma":[0.00024900094,0.00031327282,0.00014337643,0.00017612436,0.00023850259,0.00036815996,0.00031617575,0.00040320682,0.000367469],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000023878509,0.000005286371,0.00007963565,0.00004801451,0.0000039060083,0.000056219786,0.000024716743,0.000108106964,0.99802667,0.00016854993,0.00019001194,0.0012649151],"study_design_scores_gemma":[0.000023093717,0.000064900305,0.0017692752,0.0000065491377,0.000006405064,0.0001571787,0.000021814163,0.0018608851,0.9927377,0.0000741795,0.003271248,0.0000067121873],"about_ca_topic_score_codex":0.001937646,"about_ca_topic_score_gemma":0.0057301736,"teacher_disagreement_score":0.001937646,"about_ca_system_score_codex":0.0004458884,"about_ca_system_score_gemma":0.00033199857,"threshold_uncertainty_score":0.0044242144},"labels":[],"label_agreement":null},{"id":"W2330332120","doi":"10.1557/proc-814-i6.2","title":"Polycrystalline Germanium and Silicon-Germanium Alloys on Plastic for Realization of Thin-Film Transistors","year":2004,"lang":"en","type":"article","venue":"MRS Proceedings","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":5,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Acadia University","funders":"","keywords":"Materials science; Thin-film transistor; Germanium; Fabrication; Crystallite; Crystallization; Annealing (glass); Optoelectronics; Polycrystalline silicon; Silicon; Composite material; Metallurgy; Chemical engineering; Layer (electronics)","score_opus":0.008911719245095092,"score_gpt":0.20021832940291212,"score_spread":0.19130661015781703,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2330332120","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9701248,0.005561972,0.010139155,0.00032605397,0.0003477259,0.00006347396,0.00034361705,0.00023133757,0.012861817],"genre_scores_gemma":[0.97815984,0.0020749203,0.013657571,0.00006133525,0.000026703274,0.000034334666,0.00027999136,0.00007419804,0.005631095],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999112,0.000007748522,0.0000052797313,0.000017334602,0.00003887411,0.000019636534],"domain_scores_gemma":[0.99994624,0.000012806757,0.0000126115965,0.000012850726,0.000008395241,0.0000071209806],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00010034311,0.00035131548,0.00033310882,0.00028906635,0.00025033447,0.00054207153,0.00057290465,0.0004315482,0.001372355],"category_scores_gemma":[0.0001588451,0.00031741013,0.0001918481,0.00030487188,0.00018594843,0.0003660678,0.00030648377,0.0003905629,0.00039897778],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00009402852,0.000020167554,0.00015576737,0.00012307215,0.00001771013,0.000146971,0.0000348026,0.0006330054,0.99372005,0.0018312627,0.00027679934,0.002946365],"study_design_scores_gemma":[0.000021549973,0.00011605506,0.0006631643,0.000014228145,0.000018862645,0.0001068397,0.000027217802,0.002029123,0.9923537,0.00030131772,0.0043416354,0.000006327022],"about_ca_topic_score_codex":0.00048853795,"about_ca_topic_score_gemma":0.0017721747,"teacher_disagreement_score":0.001372355,"about_ca_system_score_codex":0.00032436286,"about_ca_system_score_gemma":0.00024738637,"threshold_uncertainty_score":0.0045910478},"labels":[],"label_agreement":null},{"id":"W2333312203","doi":"10.1139/cjp-2013-0580","title":"Solid-phase crystallization of high growth rate amorphous silicon films deposited by gas-jet electron beam plasma CVD method","year":2014,"lang":"en","type":"article","venue":"Canadian Journal of Physics","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":10,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":false,"route_ca_venue":true,"route_about_ca":false,"ca_institutions":"","funders":"","keywords":"Nanocrystalline silicon; Materials science; Thin film; Crystallinity; Amorphous solid; Crystallization; Analytical Chemistry (journal); Amorphous silicon; Nanocrystalline material; Plasma-enhanced chemical vapor deposition; Silicon; Carbon film; Optics; Crystalline silicon; Crystallography; Chemical engineering; Composite material; Optoelectronics; Nanotechnology; Chemistry; Physics","score_opus":0.00563684565057449,"score_gpt":0.22724868980891033,"score_spread":0.22161184415833585,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2333312203","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.985521,0.00127158,0.009207377,0.000050004626,0.00004589142,0.000042659725,0.0006180848,0.0001319482,0.0031114577],"genre_scores_gemma":[0.980224,0.0010000318,0.016348792,0.000009087934,0.000008262458,0.000035415564,0.0004390246,0.000043978554,0.0018913916],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998698,0.000009024575,0.0000101863725,0.00003402151,0.000058745904,0.000018269353],"domain_scores_gemma":[0.99989414,0.000030400555,0.000017666116,0.00001551397,0.00003395563,0.000008360591],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00013391978,0.00022406614,0.0003646033,0.0001734419,0.000227547,0.00021041428,0.00024472884,0.00016920605,0.0006922807],"category_scores_gemma":[0.00016210284,0.00016880977,0.00017266555,0.00024972158,0.00012922393,0.00014065597,0.000112729096,0.00032084074,0.00018595073],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000012327134,0.0000052210953,0.00007679379,0.000035625515,0.0000023301643,0.00003863832,0.000013820239,0.00007138436,0.99892527,0.000045195655,0.00003137489,0.0007419683],"study_design_scores_gemma":[0.0000034824247,0.000029075678,0.0007317838,0.0000018692092,0.0000026317196,0.00005920136,0.000007132862,0.00095671846,0.99750996,0.000013896925,0.00068179116,0.000002414661],"about_ca_topic_score_codex":0.0013550867,"about_ca_topic_score_gemma":0.0026277693,"teacher_disagreement_score":0.0013550867,"about_ca_system_score_codex":0.0002326245,"about_ca_system_score_gemma":0.00026368618,"threshold_uncertainty_score":0.002694428},"labels":[],"label_agreement":null},{"id":"W2334328596","doi":"10.1557/proc-0989-a21-07","title":"Evolution of Structural and Electronic Properties in Boron-doped Nanocrystalline Silicon Thin Films","year":2007,"lang":"en","type":"article","venue":"MRS Proceedings","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":4,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Materials science; Plasma-enhanced chemical vapor deposition; Raman spectroscopy; Nanocrystalline silicon; Doping; Nanocrystalline material; Silane; Amorphous solid; Boron; Crystallinity; Analytical Chemistry (journal); Chemical vapor deposition; Thin film; Conductivity; Silicon; Amorphous silicon; Nanotechnology; Optoelectronics; Composite material; Crystalline silicon; Crystallography; Optics; Physical chemistry","score_opus":0.006000041876888758,"score_gpt":0.18649393035114004,"score_spread":0.18049388847425127,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2334328596","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99770504,0.00034723833,0.00023653325,0.00006651556,0.0000100631805,0.0000027326412,0.0001584034,0.000023227316,0.0014502392],"genre_scores_gemma":[0.9983651,0.00019080612,0.0002696557,0.000019112109,0.0000042054903,0.000003819973,0.00014925044,0.000014713628,0.0009833339],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999392,0.000003773014,0.000002635624,0.000012689251,0.000024815909,0.000016876545],"domain_scores_gemma":[0.9997985,0.000067608846,0.00004046444,0.000014904318,0.00005626778,0.00002229773],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00009217487,0.00013038842,0.00017411448,0.00021929397,0.0002588755,0.00046724005,0.00028106154,0.00030258863,0.0021447304],"category_scores_gemma":[0.00045201372,0.00022223723,0.00010431336,0.0001895292,0.0002011004,0.0003187502,0.00010326939,0.00030533204,0.00024020344],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00011542411,0.000012334622,0.00074795686,0.000029074807,0.000009616855,0.000057135647,0.000037355585,0.00022920592,0.9973278,0.00023945073,0.000114104085,0.0010804951],"study_design_scores_gemma":[0.000019030636,0.00011695606,0.01343279,0.0000082185625,0.000017220395,0.0001063027,0.00013558423,0.003905906,0.98129696,0.00013624228,0.00081629615,0.000008577387],"about_ca_topic_score_codex":0.0037124201,"about_ca_topic_score_gemma":0.0044120857,"teacher_disagreement_score":0.0037124201,"about_ca_system_score_codex":0.0005391334,"about_ca_system_score_gemma":0.0002117018,"threshold_uncertainty_score":0.007381618},"labels":[],"label_agreement":null},{"id":"W2334502745","doi":"10.1557/proc-0910-a18-06","title":"Nano-Crystalline Silicon Thin Film Transistors on PET Substrates Using a Hydrogenation-assisted Metal-induced Crystallization Technique","year":2006,"lang":"en","type":"article","venue":"MRS Proceedings","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Acadia University","funders":"","keywords":"Materials science; Silicon; Crystallinity; Crystallization; Thin-film transistor; Substrate (aquarium); Thin film; Composite material; Optoelectronics; Chemical engineering; Nanotechnology; Layer (electronics)","score_opus":0.015704158106223016,"score_gpt":0.21536497683464995,"score_spread":0.19966081872842692,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2334502745","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9796276,0.0006599907,0.012480592,0.00027766393,0.00010008999,0.00006924824,0.00041780638,0.0003470217,0.0060199127],"genre_scores_gemma":[0.9796286,0.0005104451,0.014378467,0.000041962187,0.000023419017,0.000058899048,0.00030897025,0.000095896445,0.004953253],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998927,0.000008893275,0.000007566095,0.000027531392,0.000041931024,0.000021379337],"domain_scores_gemma":[0.9998745,0.000046528545,0.000020709549,0.000032234304,0.000015448026,0.000010497251],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00014105783,0.00017872982,0.0003322221,0.000114438306,0.00023697439,0.0002680314,0.00041252156,0.00019401898,0.0012261944],"category_scores_gemma":[0.00017693231,0.00026670384,0.00019642447,0.00016808283,0.00021727578,0.00034532102,0.00018972918,0.000438108,0.0003565093],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000021911725,0.0000062036106,0.000036555623,0.000023303122,0.000003055958,0.000024637848,0.000020784102,0.00006134258,0.9989347,0.00014194283,0.00008766555,0.0006377722],"study_design_scores_gemma":[0.000010057603,0.000027456299,0.00037825698,0.0000017650018,0.0000023151886,0.000041195486,0.000013037968,0.00089869497,0.9977381,0.000030750125,0.0008555056,0.0000027528333],"about_ca_topic_score_codex":0.00092671014,"about_ca_topic_score_gemma":0.00307531,"teacher_disagreement_score":0.0012261944,"about_ca_system_score_codex":0.00032936395,"about_ca_system_score_gemma":0.00027920216,"threshold_uncertainty_score":0.0041019917},"labels":[],"label_agreement":null},{"id":"W2334545351","doi":"10.1021/jz501674p","title":"Comparison of Ag and SiO<sub>2</sub> Nanoparticles for Light Trapping Applications in Silicon Thin Film Solar Cells","year":2014,"lang":"en","type":"article","venue":"The Journal of Physical Chemistry Letters","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":16,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Victoria","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Materials science; Plasmonic solar cell; Nanoparticle; Plasmon; Silicon; Amorphous silicon; Trapping; Optoelectronics; Photonics; Amorphous solid; Solar cell; Nanotechnology; Crystalline silicon; Monocrystalline silicon; Chemistry; Crystallography","score_opus":0.007758990735048191,"score_gpt":0.21484066340023852,"score_spread":0.20708167266519034,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2334545351","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99654764,0.00029346076,0.0014762603,0.000019802794,0.000008322967,0.000010550749,0.0000430357,0.000038352417,0.0015625567],"genre_scores_gemma":[0.9974711,0.00011236117,0.0020138132,0.0000065116687,0.0000019351824,0.000007611417,0.00004098886,0.0000095059,0.00033616007],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999249,0.000008740211,0.0000041703474,0.000015647824,0.00003585681,0.000010602528],"domain_scores_gemma":[0.9998578,0.000061946186,0.000014504031,0.000010432943,0.00004481138,0.00001048023],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00012498985,0.00023157887,0.0002302392,0.00014624877,0.00014252817,0.00037723692,0.00026478257,0.00029543557,0.0006577308],"category_scores_gemma":[0.00028157624,0.0000995307,0.00017294732,0.00013939808,0.00015509797,0.00021163115,0.000104636136,0.00009066258,0.0001345643],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00029286527,0.000087707376,0.0014091901,0.00012984853,0.000027326838,0.00009702491,0.000022176957,0.02021355,0.97005683,0.00030533836,0.00008119609,0.007276927],"study_design_scores_gemma":[0.00003688641,0.0005599231,0.0045072646,0.00000632079,0.000037621925,0.000053630523,0.000065153814,0.07890085,0.91501075,0.00011174257,0.00069990696,0.000010031515],"about_ca_topic_score_codex":0.00090233184,"about_ca_topic_score_gemma":0.0019487194,"teacher_disagreement_score":0.00090233184,"about_ca_system_score_codex":0.00031434087,"about_ca_system_score_gemma":0.00011597462,"threshold_uncertainty_score":0.0022807121},"labels":[],"label_agreement":null},{"id":"W2335727531","doi":"10.1557/proc-808-a4.8","title":"Bottom-Gate TFTs with Channel Layer Grown by Pulsed PECVD Technique","year":2004,"lang":"en","type":"article","venue":"MRS Proceedings","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"University of Toronto","keywords":"Materials science; Plasma-enhanced chemical vapor deposition; Optoelectronics; Crystallinity; Amorphous solid; Layer (electronics); Thin-film transistor; Raman spectroscopy; Conductivity; Dielectric; Transmittance; Composite material; Chemical vapor deposition; Optics","score_opus":0.006529804781341064,"score_gpt":0.17954579923709454,"score_spread":0.17301599445575347,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2335727531","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.96392673,0.0012237947,0.024959274,0.00026520662,0.00035109615,0.000066869026,0.0014261204,0.00079499604,0.006986008],"genre_scores_gemma":[0.9717533,0.00067038945,0.018381437,0.000065376815,0.00006951207,0.00005080565,0.0011827328,0.00016137151,0.007664994],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.999908,0.000002808815,0.0000042927295,0.000020055299,0.000036992744,0.000027946578],"domain_scores_gemma":[0.9998814,0.000017940836,0.000013705682,0.000027870914,0.000039746625,0.00001937578],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00007905869,0.00032240516,0.00048070672,0.00018367842,0.0003510793,0.00038319186,0.00049505796,0.0004287482,0.0013939556],"category_scores_gemma":[0.0002171596,0.0002510252,0.00018824829,0.00024662123,0.00016021763,0.0004518851,0.00019071785,0.0005354885,0.0006624076],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00003736937,0.0000051360907,0.000106966596,0.000030045463,0.0000042671963,0.00006214673,0.000013703193,0.000046048557,0.99834967,0.00008625027,0.00019192847,0.0010664732],"study_design_scores_gemma":[0.000012174144,0.00005896417,0.001443284,0.00000401257,0.000020911166,0.00020795432,0.000012725256,0.0012486436,0.99407274,0.00008105751,0.0028310984,0.000006508375],"about_ca_topic_score_codex":0.0018714152,"about_ca_topic_score_gemma":0.0033530565,"teacher_disagreement_score":0.0018714152,"about_ca_system_score_codex":0.00027145856,"about_ca_system_score_gemma":0.0003007336,"threshold_uncertainty_score":0.004663229},"labels":[],"label_agreement":null},{"id":"W2336664115","doi":"10.1149/ma2016-01/24/1248","title":"Effect of the Deposition Temperature and Thermal-Annealing on the I-V Characteristics of Low-Temperature-Processed Polycrystalline ZnO and Amorphous InGaZnO TFTs","year":2016,"lang":"en","type":"article","venue":"ECS Meeting Abstracts","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Materials science; Amorphous solid; Thin-film transistor; Annealing (glass); Optoelectronics; Crystallite; Dielectric; Nanotechnology; Layer (electronics); Composite material; Metallurgy; Crystallography","score_opus":0.003407883495275028,"score_gpt":0.1774355097041287,"score_spread":0.17402762620885368,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2336664115","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9967115,0.001596023,0.0007296047,0.00004547897,0.000039872728,0.000009737752,0.00019733548,0.000042066666,0.0006284399],"genre_scores_gemma":[0.9983542,0.0004986534,0.0006045053,0.000019608386,0.000008919872,0.000009185184,0.00013658145,0.00001882159,0.00034953997],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99978286,0.000017985356,0.0000211622,0.00006486591,0.0000522052,0.000060940827],"domain_scores_gemma":[0.9994597,0.00025851323,0.000115397925,0.000043068652,0.00008679165,0.000036497655],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00018869991,0.00029584143,0.00028894178,0.00019453546,0.00014112092,0.00036611108,0.00030417566,0.00030681794,0.0007975446],"category_scores_gemma":[0.00067022594,0.0002104177,0.00019311704,0.00034096025,0.00017197103,0.00030802016,0.00009626374,0.00030087127,0.00023537314],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0004196463,0.000032754975,0.0013677771,0.0000794075,0.000020903131,0.00013175127,0.00006866022,0.00049537554,0.9954247,0.000026754464,0.00007016569,0.0018622233],"study_design_scores_gemma":[0.000018709012,0.00033644715,0.013193982,0.000009216537,0.000044664404,0.00010674748,0.00006484746,0.002639418,0.98310214,0.000011750697,0.00046146454,0.000010622099],"about_ca_topic_score_codex":0.0015646003,"about_ca_topic_score_gemma":0.002315321,"teacher_disagreement_score":0.0015646003,"about_ca_system_score_codex":0.00032954232,"about_ca_system_score_gemma":0.00015775063,"threshold_uncertainty_score":0.0031110048},"labels":[],"label_agreement":null},{"id":"W2339471737","doi":"10.1557/adv.2016.244","title":"An amorphous-to-crystalline phase transition within thin silicon films grown through ultra-high-vacuum evaporation on fused quartz substrates","year":2016,"lang":"en","type":"article","venue":"MRS Advances","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of British Columbia, Okanagan Campus; University of British Columbia; National Research Council Canada; University of Regina","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Materials science; Raman spectroscopy; Amorphous solid; Vacuum evaporation; Evaporation; Phase transition; Silicon; Quartz; Analytical Chemistry (journal); Thin film; Phase (matter); Diffraction; Crystalline silicon; Ultra-high vacuum; Crystallography; Optics; Nanotechnology; Optoelectronics; Composite material; Condensed matter physics; Organic chemistry; Thermodynamics","score_opus":0.011612101369121221,"score_gpt":0.24879834840790627,"score_spread":0.23718624703878505,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2339471737","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9964696,0.0002946939,0.0011789555,0.000031056778,0.00001626583,0.00000798611,0.00010627309,0.00003689304,0.0018583763],"genre_scores_gemma":[0.99834776,0.00012787583,0.0005699074,0.000007019929,0.000003566842,0.000003870984,0.00005981873,0.000009390801,0.00087087095],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999577,0.0000029327384,0.0000022467993,0.0000101504165,0.000015708565,0.000011220453],"domain_scores_gemma":[0.99993,0.000032233263,0.000012854513,0.000008272669,0.00001036655,0.0000061643464],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00005598878,0.000088240544,0.000101478276,0.00012371916,0.00021033685,0.00034300116,0.00020743028,0.0001274331,0.0009863639],"category_scores_gemma":[0.0001701363,0.00017111964,0.00007627743,0.000102858095,0.00021161058,0.00023636196,0.00010903012,0.00031266263,0.000108331005],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00004244123,0.000007883753,0.00027063367,0.000028331791,0.0000038371663,0.00008334255,0.000048910577,0.00012585202,0.998109,0.00041041797,0.000060708797,0.0008086235],"study_design_scores_gemma":[0.000009613598,0.000081177626,0.0035296017,0.0000041340395,0.0000054183765,0.000058505633,0.000048848193,0.0010518222,0.9941142,0.00006734432,0.0010264172,0.0000029444907],"about_ca_topic_score_codex":0.0013445542,"about_ca_topic_score_gemma":0.002637321,"teacher_disagreement_score":0.0013445542,"about_ca_system_score_codex":0.00020048831,"about_ca_system_score_gemma":0.0002125462,"threshold_uncertainty_score":0.0032997131},"labels":[],"label_agreement":null},{"id":"W2344034573","doi":"10.1557/proc-715-a19.1","title":"Amorphous Silicon Films and Superlattices Grown by Molecular Beam Epitaxy: An Optical Analysis","year":2002,"lang":"en","type":"article","venue":"MRS Proceedings","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Regina; National Research Council Canada; Institute for Microstructural Sciences","funders":"Natural Sciences and Engineering Research Council of Canada; CMC Microsystems","keywords":"Materials science; Silicon; Amorphous solid; Superlattice; Amorphous silicon; Molecular beam epitaxy; Nanocrystalline silicon; Impurity; Substrate (aquarium); Raman spectroscopy; Optoelectronics; Crystalline silicon; Epitaxy; Nanotechnology; Crystallography; Optics; Chemistry; Organic chemistry","score_opus":0.007401563811341741,"score_gpt":0.18360002681121085,"score_spread":0.1761984629998691,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2344034573","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99149257,0.0015193658,0.00084202737,0.000092138376,0.000015212309,0.0000137671295,0.00017390068,0.000022616137,0.005828483],"genre_scores_gemma":[0.99604744,0.0005650321,0.0008309193,0.000021363392,0.000011072385,0.000008627534,0.00023856203,0.000007759306,0.0022691474],"study_design_codex":"bench_or_experimental","study_design_gemma":"observational","domain_scores_codex":[0.99993014,0.000004908922,0.0000024089522,0.000009490247,0.00003403307,0.000018964472],"domain_scores_gemma":[0.99989414,0.00004436406,0.000020735748,0.000009614387,0.000020915048,0.000010248653],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00010751491,0.00018724528,0.00013045147,0.00054630823,0.00041878628,0.00040614852,0.0003279546,0.00025273339,0.0018106486],"category_scores_gemma":[0.00018720923,0.0001868146,0.00015467426,0.00037713174,0.00034085524,0.00035816783,0.000113515685,0.00017950025,0.00019470618],"study_design_candidate":"observational","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0003636348,0.00005909965,0.0039331326,0.00011067761,0.000024385607,0.0003123859,0.00008750737,0.00096110755,0.98678035,0.0040854174,0.00033080069,0.0029514804],"study_design_scores_gemma":[0.00008685323,0.0005153124,0.08035456,0.00001815563,0.0000520271,0.00062631787,0.0005196655,0.020619696,0.88936657,0.0017798849,0.0060408954,0.000020105652],"about_ca_topic_score_codex":0.0035517938,"about_ca_topic_score_gemma":0.007351736,"teacher_disagreement_score":0.0035517938,"about_ca_system_score_codex":0.0003550077,"about_ca_system_score_gemma":0.0001918148,"threshold_uncertainty_score":0.0070621967},"labels":[],"label_agreement":null},{"id":"W2348242156","doi":"","title":"Solid-phase Crystallization of Amorphous Silicon Films by Rapid Thermal Annealing","year":2005,"lang":"en","type":"article","venue":"半导体光子学与技术(英文版)","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"L'Alliance Boviteq","funders":"","keywords":"Crystallization; Annealing (glass); Materials science; Silicon; Amorphous silicon; Amorphous solid; Raman scattering; Raman spectroscopy; Analytical Chemistry (journal); Chemical engineering; Optoelectronics; Crystallography; Optics; Composite material; Crystalline silicon; Chemistry","score_opus":0.008885672609731533,"score_gpt":0.25505462779334087,"score_spread":0.24616895518360934,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2348242156","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9827665,0.0013010863,0.011001739,0.00011069388,0.00005499062,0.000038463153,0.00030847162,0.00018432282,0.0042337948],"genre_scores_gemma":[0.9838313,0.000784091,0.012223571,0.000012612628,0.000013934596,0.000030252251,0.00037375384,0.000058834477,0.0026715568],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99989104,0.000009328477,0.00000830833,0.000025649213,0.00004648847,0.000019149245],"domain_scores_gemma":[0.99992824,0.000018427332,0.000013738754,0.000015304064,0.000017879674,0.0000064209444],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00013399463,0.00029092346,0.0002928757,0.00019567432,0.0002262177,0.00025695426,0.00021867386,0.00014363781,0.0012703454],"category_scores_gemma":[0.00016438769,0.0002932638,0.00029433882,0.000232595,0.00017894519,0.00019460464,0.00018426693,0.00039377523,0.0003145912],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000016699116,0.0000049761366,0.00004557982,0.000026409229,0.0000032719377,0.000022675606,0.000015549633,0.00015269157,0.99881697,0.00014523222,0.000039123774,0.00071089173],"study_design_scores_gemma":[0.000008046533,0.000028307622,0.00030303525,0.0000023800735,0.0000035758858,0.000030113197,0.000005507785,0.0012614715,0.9975562,0.000039482995,0.0007592843,0.000002474342],"about_ca_topic_score_codex":0.00080918544,"about_ca_topic_score_gemma":0.0019565597,"teacher_disagreement_score":0.0012703454,"about_ca_system_score_codex":0.00024455553,"about_ca_system_score_gemma":0.0002705661,"threshold_uncertainty_score":0.0042497516},"labels":[],"label_agreement":null},{"id":"W2351461491","doi":"","title":"Study on Micro-crystallization of SiC with C Implanted onto Crystal Silicon","year":2001,"lang":"en","type":"article","venue":"","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"CAE (Canada)","funders":"","keywords":"Materials science; Silicon; Crystallization; Annealing (glass); Raman spectroscopy; Photoluminescence; Optoelectronics; Band gap; Silicon carbide; Crystal (programming language); Composite material; Chemical engineering; Optics","score_opus":0.011689279959100374,"score_gpt":0.20947301315892503,"score_spread":0.19778373319982465,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2351461491","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9931231,0.00058679114,0.0017772937,0.00004163566,0.000018415903,0.000018627457,0.00009968454,0.000043912445,0.004290516],"genre_scores_gemma":[0.9956423,0.0002560831,0.0016750218,0.000015184675,0.000007298649,0.000010239846,0.0001166277,0.000019758141,0.0022575818],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999225,0.000004185814,0.0000021945307,0.000015483369,0.00003627216,0.000019452806],"domain_scores_gemma":[0.99989176,0.00003395869,0.000018631621,0.00001393392,0.00002931023,0.000012454222],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00008053034,0.00012869075,0.00014458624,0.00010049057,0.00023122168,0.0001932819,0.00012024937,0.00012868743,0.0010045504],"category_scores_gemma":[0.00019779173,0.00010677235,0.00016453306,0.000089379595,0.0001877575,0.00012943456,0.00010474305,0.00021096853,0.0001970916],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000029345903,0.000010337883,0.00029865783,0.000035486508,0.000003336497,0.000084086365,0.00003863694,0.0003004238,0.9979431,0.00018329422,0.00006786545,0.0010054092],"study_design_scores_gemma":[0.0000088246725,0.000093387425,0.0055860844,0.000005597082,0.000006417539,0.00015802313,0.000044834833,0.0028926516,0.98949975,0.00003141465,0.0016685278,0.0000045121346],"about_ca_topic_score_codex":0.0029444993,"about_ca_topic_score_gemma":0.004972179,"teacher_disagreement_score":0.0029444993,"about_ca_system_score_codex":0.00029229713,"about_ca_system_score_gemma":0.00025342274,"threshold_uncertainty_score":0.005854726},"labels":[],"label_agreement":null},{"id":"W2351531971","doi":"","title":"Improving efficiency of silicon nitride film deposition on glass","year":2009,"lang":"en","type":"article","venue":"Harbin Gongcheng Daxue Xuebao/Journal of Harbin Engineering University","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"L'Alliance Boviteq","funders":"","keywords":"Silicon nitride; Materials science; Plasma-enhanced chemical vapor deposition; Silane; Electron cyclotron resonance; Substrate (aquarium); Deposition (geology); Refractive index; Thin film; Chemical vapor deposition; Nitride; Silicon oxynitride; Silicon; Analytical Chemistry (journal); Plasma; Layer (electronics); Optoelectronics; Composite material; Nanotechnology; Chemistry","score_opus":0.004041229218070835,"score_gpt":0.15562751016604062,"score_spread":0.15158628094796978,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2351531971","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.987541,0.0020540655,0.0054366468,0.000060916627,0.000038412636,0.000024788576,0.00010256116,0.00019342746,0.0045483103],"genre_scores_gemma":[0.98751384,0.0015090015,0.008319717,0.000021037573,0.000009718583,0.000012558814,0.00013679954,0.000049112386,0.0024282527],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998934,0.0000072694156,0.000008762102,0.000023749273,0.00003603624,0.000030733903],"domain_scores_gemma":[0.9999335,0.000019791949,0.0000139830245,0.000010057543,0.000015913944,0.0000067041906],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00012069993,0.00028213358,0.00031623454,0.00027397834,0.00016819763,0.0002618161,0.00028443063,0.00016104411,0.0010711398],"category_scores_gemma":[0.00015612775,0.00022286194,0.00022528163,0.00024525513,0.00011282696,0.00024465861,0.00021926929,0.00017589646,0.00035545777],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000013104854,0.0000034205848,0.00016354946,0.00004150365,0.000004061588,0.00003929951,0.000011249528,0.00012571551,0.9980223,0.00005036729,0.00004089099,0.0014845675],"study_design_scores_gemma":[0.00000271125,0.000031465952,0.001171336,0.0000043014124,0.000009042579,0.000045374967,0.0000088341185,0.001227795,0.9966043,0.000010148517,0.0008818828,0.000002725831],"about_ca_topic_score_codex":0.0016676378,"about_ca_topic_score_gemma":0.0029982033,"teacher_disagreement_score":0.0016676378,"about_ca_system_score_codex":0.00028996228,"about_ca_system_score_gemma":0.00015242539,"threshold_uncertainty_score":0.0035832524},"labels":[],"label_agreement":null},{"id":"W2353629792","doi":"","title":"P-type Transparent Conducting Indium-Tin Oxide Thin Films Deposited by Spray-pyrolysis","year":2006,"lang":"en","type":"article","venue":"Journal of Inorganic Materials","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"CAE (Canada)","funders":"","keywords":"Materials science; Spray pyrolysis; Indium tin oxide; Indium; Pyrolysis; Thin film; Tin; Oxide; Chemical engineering; Tin oxide; Metallurgy; Nanotechnology","score_opus":0.016137490748805477,"score_gpt":0.21222914656202696,"score_spread":0.1960916558132215,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2353629792","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.98841,0.0008612891,0.005994686,0.0000803124,0.00006196989,0.000029316227,0.00015464597,0.00011803234,0.004289775],"genre_scores_gemma":[0.9902895,0.00063771487,0.0061351107,0.000021102942,0.0000120367495,0.000015051907,0.00010951389,0.00003010469,0.0027499264],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99994266,0.0000030954134,0.0000031371744,0.000013765353,0.000024844692,0.000012604914],"domain_scores_gemma":[0.9999403,0.00002086308,0.000011311301,0.000008608763,0.000011761107,0.000007100025],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0001230422,0.0002265039,0.00022727858,0.00017580089,0.00023414765,0.00026321597,0.00024921613,0.00017530807,0.0011080449],"category_scores_gemma":[0.00023372208,0.00028388147,0.00016668472,0.00015018859,0.00019739513,0.00039793376,0.00016088496,0.00038768232,0.00021441968],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000018687228,0.000003130792,0.000051208845,0.000025420279,0.0000014782356,0.000046547455,0.000015108475,0.000027021062,0.9989919,0.000107130894,0.00003536547,0.00067703327],"study_design_scores_gemma":[0.000007001109,0.00004130755,0.00086397724,0.0000031784048,0.0000049882447,0.00013331645,0.000014923909,0.00047421345,0.9977034,0.0000528513,0.00069832185,0.0000025141549],"about_ca_topic_score_codex":0.00047969967,"about_ca_topic_score_gemma":0.0011672687,"teacher_disagreement_score":0.0011080449,"about_ca_system_score_codex":0.00016327668,"about_ca_system_score_gemma":0.0002050675,"threshold_uncertainty_score":0.0037068129},"labels":[],"label_agreement":null},{"id":"W2377162614","doi":"","title":"Study of the Properties of SiO_x Barrier Coatings by MPECVD","year":2012,"lang":"en","type":"article","venue":"Packaging Engineering","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"L'Alliance Boviteq","funders":"","keywords":"Fourier transform infrared spectroscopy; Materials science; Transmittance; Coating; Chemical vapor deposition; Layer (electronics); Chemical engineering; Deposition (geology); Infrared; Composite material; Optics; Nanotechnology; Optoelectronics","score_opus":0.010724116695369436,"score_gpt":0.17442951191829412,"score_spread":0.16370539522292468,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2377162614","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9949722,0.00092661317,0.0024901666,0.000036136196,0.000018894229,0.00001156159,0.00012577767,0.00004045989,0.0013781594],"genre_scores_gemma":[0.9961914,0.00054454285,0.0018666735,0.000012899954,0.0000061308065,0.000009669547,0.00015042811,0.000021917584,0.0011963573],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99990344,0.0000047918147,0.000004109796,0.000018532652,0.00004991034,0.000019267343],"domain_scores_gemma":[0.9998927,0.000036471985,0.000023282755,0.000009539181,0.000031102332,0.000006960893],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00011947866,0.00021829034,0.0001874541,0.00012083062,0.00015953483,0.00028571862,0.00022584316,0.0002960296,0.0010772932],"category_scores_gemma":[0.00030611115,0.00018302021,0.0001636662,0.00016808188,0.00011274362,0.00025367973,0.000084579246,0.00024441894,0.00026907556],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000022277272,0.000004378597,0.00018971418,0.000035320532,0.000003706189,0.00005092189,0.00001939622,0.00008121712,0.99878496,0.000037486807,0.000021106165,0.0007494834],"study_design_scores_gemma":[0.0000052499313,0.00007531408,0.0038275288,0.0000035327134,0.0000091383945,0.00010103023,0.00002308228,0.0016943819,0.9934069,0.000014320745,0.00083622604,0.000003311905],"about_ca_topic_score_codex":0.0007977122,"about_ca_topic_score_gemma":0.0006976806,"teacher_disagreement_score":0.0010772932,"about_ca_system_score_codex":0.00015206392,"about_ca_system_score_gemma":0.000100526806,"threshold_uncertainty_score":0.0036039352},"labels":[],"label_agreement":null},{"id":"W2379206721","doi":"","title":"Poly-Si Thin Film Prepared by XeCl Excimer Laser Crystallization and Its Ellipsometric Analysis","year":2000,"lang":"en","type":"article","venue":"","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"CAE (Canada)","funders":"","keywords":"Materials science; Thin-film transistor; Excimer laser; Crystallization; Thin film; Substrate (aquarium); Ellipsometry; Laser; Optoelectronics; Optics; Composite material; Nanotechnology; Chemical engineering; Layer (electronics)","score_opus":0.0062290864324431134,"score_gpt":0.19106850982177678,"score_spread":0.18483942338933368,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2379206721","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.94531816,0.0024470729,0.04728558,0.00009261705,0.00004386283,0.000068662725,0.00072505244,0.00017152564,0.0038474356],"genre_scores_gemma":[0.9599507,0.0017498326,0.035552997,0.000010527887,0.0000097643215,0.00005102588,0.00052044133,0.00004070136,0.0021139528],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99992824,0.0000047079743,0.0000042803886,0.000016018173,0.00003905034,0.000007646397],"domain_scores_gemma":[0.9999279,0.000024515477,0.000012941525,0.000007963497,0.000023075734,0.0000035602636],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000120425844,0.00021018789,0.00020157149,0.00023545572,0.00016627468,0.00017568878,0.00016681686,0.00016159925,0.00053012813],"category_scores_gemma":[0.00018063154,0.000119510216,0.000110496905,0.00034070484,0.00016531556,0.00023476218,0.000064496184,0.00031102446,0.00012011632],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000016195274,0.000005442371,0.00012580045,0.00003545124,0.0000021103945,0.000037096073,0.000016493781,0.00025930683,0.997267,0.00022204727,0.000029974293,0.001983145],"study_design_scores_gemma":[0.0000030324672,0.000022897915,0.0017873227,0.000003219636,0.0000050949106,0.00008661996,0.0000142417,0.0046873987,0.9924791,0.00005330474,0.0008532216,0.00000446703],"about_ca_topic_score_codex":0.0014130749,"about_ca_topic_score_gemma":0.0015215036,"teacher_disagreement_score":0.0014130749,"about_ca_system_score_codex":0.00021757015,"about_ca_system_score_gemma":0.00023083134,"threshold_uncertainty_score":0.0028096437},"labels":[],"label_agreement":null},{"id":"W2398632776","doi":"10.1557/adv.2016.357","title":"Optimization of Copper Schottky Contacts on Nanocrystalline ZnO thin films by Atomic Layer Deposition","year":2016,"lang":"en","type":"article","venue":"MRS Advances","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Alberta","funders":"","keywords":"Materials science; Schottky diode; Optoelectronics; Schottky barrier; Nanocrystalline material; Thermionic emission; Atomic layer deposition; Annealing (glass); Thin film; Copper; Diode; Crystallite; Semiconductor; Nanotechnology; Composite material; Metallurgy","score_opus":0.006165596888688293,"score_gpt":0.20449274461104425,"score_spread":0.19832714772235596,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2398632776","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9891187,0.001628253,0.004562194,0.00017385349,0.00011213762,0.000052769385,0.00029883065,0.00016539109,0.003887794],"genre_scores_gemma":[0.9924683,0.00087567547,0.005167464,0.000020832666,0.00001608487,0.000031381656,0.00014589283,0.00005033211,0.0012240289],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9997942,0.00000860181,0.000011875389,0.000040759936,0.00010556727,0.000038897855],"domain_scores_gemma":[0.9998368,0.00003833948,0.000040574967,0.000018503692,0.00005053071,0.000015256952],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00013324265,0.00032304667,0.00052604417,0.00022245687,0.00040141577,0.0006221223,0.00054000516,0.000324477,0.001027246],"category_scores_gemma":[0.00054123055,0.00030328435,0.00020806295,0.00036703853,0.0001211569,0.00031664362,0.0002586653,0.00029489948,0.00029901366],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00007926166,0.000031669173,0.0005045845,0.0001907922,0.000020001764,0.000085637665,0.000042494383,0.0015397773,0.99299014,0.00022684224,0.00034047407,0.0039483006],"study_design_scores_gemma":[0.00004185449,0.00021801938,0.0030531776,0.000017076109,0.000035901106,0.00007116145,0.00007167417,0.014757115,0.97956914,0.000083902996,0.0020682272,0.000012884906],"about_ca_topic_score_codex":0.0046403417,"about_ca_topic_score_gemma":0.012069593,"teacher_disagreement_score":0.0046403417,"about_ca_system_score_codex":0.00093894853,"about_ca_system_score_gemma":0.00046598222,"threshold_uncertainty_score":0.00922668},"labels":[],"label_agreement":null},{"id":"W2411761740","doi":"10.1149/ma2011-01/20/1291","title":"Transient Behavior of Variable Range Hopping","year":2011,"lang":"en","type":"article","venue":"ECS Meeting Abstracts","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McMaster University","funders":"","keywords":"Variable-range hopping; Exponential distribution; Range (aeronautics); Density of states; Thermal conduction; Statistical physics; Variable (mathematics); Physics; Distribution (mathematics); Probability density function; Exponential function; Mathematics; Condensed matter physics; Materials science; Quantum mechanics; Mathematical analysis; Statistics","score_opus":0.024622058535825078,"score_gpt":0.20510181694026453,"score_spread":0.18047975840443944,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2411761740","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.97284603,0.0006142222,0.0070644547,0.0004058456,0.000098519435,0.000025360876,0.0006393674,0.0006470796,0.017659148],"genre_scores_gemma":[0.9982053,0.000037620757,0.00019097583,0.000019657435,0.000006083901,0.00000546249,0.00014023419,0.00002081338,0.0013738922],"study_design_codex":"bench_or_experimental","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99993634,0.000004956677,0.0000013305431,0.00001462708,0.000018887482,0.00002388795],"domain_scores_gemma":[0.99962866,0.00020003812,0.000028625089,0.000042216147,0.00005601859,0.000044443525],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000116778276,0.000116829964,0.00018288431,0.00032093437,0.00021651537,0.00025703266,0.00028692902,0.0002559735,0.01228306],"category_scores_gemma":[0.00094991823,0.00007114141,0.00011982002,0.0002811918,0.0002452558,0.00030214697,0.00013589399,0.00047244894,0.0006467452],"study_design_candidate":"simulation_or_modeling","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.002573458,0.0004805483,0.005602376,0.00060285925,0.00015001961,0.0021355,0.00088227354,0.026719064,0.87989193,0.017649528,0.011753549,0.051558893],"study_design_scores_gemma":[0.00024644285,0.001361234,0.060724817,0.00020054274,0.00015517675,0.0019849811,0.00065251585,0.56388026,0.34646904,0.012243661,0.011961049,0.000120217934],"about_ca_topic_score_codex":0.00066735805,"about_ca_topic_score_gemma":0.00040058684,"teacher_disagreement_score":0.01228306,"about_ca_system_score_codex":0.0003132671,"about_ca_system_score_gemma":0.000081815175,"threshold_uncertainty_score":0.041090906},"labels":[],"label_agreement":null},{"id":"W2413121425","doi":"10.1557/adv.2016.430","title":"Amorphous Silicon Photovoltaic Modules on Flexible Plastic Substrates","year":2016,"lang":"en","type":"article","venue":"MRS Advances","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Materials science; Fabrication; Optoelectronics; Photovoltaic system; Electrode; Electrical conductor; Stack (abstract data type); Amorphous silicon; Voltage; Coating; Amorphous solid; Substrate (aquarium); Solar cell; Crystalline silicon; Composite material; Electrical engineering; Computer science","score_opus":0.009335316284824317,"score_gpt":0.2050885430572324,"score_spread":0.19575322677240808,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2413121425","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9864478,0.00045284463,0.004186643,0.000100508085,0.00007664555,0.000020371566,0.00041045365,0.00017585498,0.008128948],"genre_scores_gemma":[0.9919463,0.0002954121,0.0023837308,0.00002746021,0.000014512872,0.000011806683,0.0001842562,0.000030003823,0.0051064976],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99989426,0.000007668233,0.0000049534583,0.000026683721,0.000037295813,0.000029007337],"domain_scores_gemma":[0.99989676,0.000021215294,0.000025643809,0.000026676511,0.000018462266,0.0000112626085],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0000920994,0.0002285398,0.00016726824,0.0002554778,0.00022798241,0.00044982156,0.00050600007,0.00021067043,0.0036883522],"category_scores_gemma":[0.00019120165,0.00017280078,0.00018066478,0.00032541878,0.00012570233,0.00046253327,0.00035522488,0.00028238117,0.0006358636],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00011205379,0.000030272608,0.000667547,0.00007132449,0.000019891524,0.00025997293,0.000040159073,0.0013225917,0.9897697,0.00058462133,0.00040282452,0.0067189755],"study_design_scores_gemma":[0.000028967368,0.00035606237,0.006513868,0.000022546259,0.000025517844,0.00020282503,0.000097752105,0.0066241683,0.98123485,0.00029207693,0.0045875898,0.0000137743145],"about_ca_topic_score_codex":0.00038017382,"about_ca_topic_score_gemma":0.0009442843,"teacher_disagreement_score":0.0036883522,"about_ca_system_score_codex":0.00020281071,"about_ca_system_score_gemma":0.00013396666,"threshold_uncertainty_score":0.012338817},"labels":[],"label_agreement":null},{"id":"W245471495","doi":"10.1007/s11468-015-9957-7","title":"Modeling and Characterization of Antireflection Coatings with Embedded Silver Nanoparticles for Silicon Solar Cells","year":2015,"lang":"en","type":"article","venue":"Plasmonics","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":26,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Ottawa","funders":"Provincia Autonoma di Trento; Fondazione Bruno Kessler","keywords":"Materials science; Plasmon; Wafer; Solar cell; Crystalline silicon; Nanoparticle; Silicon; Finite-difference time-domain method; Plasmonic solar cell; Optoelectronics; Optics; Nanotechnology; Polymer solar cell","score_opus":0.019595336733097435,"score_gpt":0.21078637311189646,"score_spread":0.19119103637879903,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W245471495","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9024427,0.0007794018,0.08065046,0.0002615935,0.00005703424,0.000065138505,0.00024442773,0.00051086297,0.014988437],"genre_scores_gemma":[0.99083495,0.00022096677,0.0062346812,0.000026084052,0.000007255869,0.000021124997,0.000074405114,0.00004344617,0.002537092],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9998697,0.000013575632,0.000004124688,0.000021067337,0.00006898609,0.000022454098],"domain_scores_gemma":[0.9998381,0.00005366292,0.000024474895,0.00002074675,0.000055612858,0.000007412538],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00015462663,0.00041489274,0.00036902793,0.00018355445,0.0002187581,0.0005709477,0.00078175525,0.0006945573,0.00072043284],"category_scores_gemma":[0.00041824093,0.00031083266,0.00044599935,0.00019105239,0.00019207489,0.00050262315,0.0001568012,0.00023114099,0.00027478405],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00009703254,0.00014569492,0.0018768294,0.0001340718,0.00007038436,0.00023135901,0.00008210775,0.7082798,0.27598166,0.0014244674,0.0007903484,0.010886248],"study_design_scores_gemma":[0.000006728526,0.00004366254,0.00047552344,0.0000032866262,0.000012235183,0.00002106282,0.00001317683,0.96239024,0.03643898,0.00013561627,0.00045407205,0.0000053788744],"about_ca_topic_score_codex":0.007945944,"about_ca_topic_score_gemma":0.007829993,"teacher_disagreement_score":0.007945944,"about_ca_system_score_codex":0.00071015616,"about_ca_system_score_gemma":0.0005851837,"threshold_uncertainty_score":0.015799403},"labels":[],"label_agreement":null},{"id":"W2485714772","doi":"10.1149/07510.0247ecst","title":"(Invited) Transparent Top Gate Oxide TFT with ITO/Ag/ITO Low Resistance Electrode for the Application to the High Speed Operation Fingerprint Sensor Array in the Touch Panel","year":2016,"lang":"en","type":"article","venue":"ECS Transactions","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":4,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Kootenay Association for Science & Technology","funders":"National NanoFab Center","keywords":"Thin-film transistor; Materials science; Electrode; Optoelectronics; Sheet resistance; Stack (abstract data type); Transistor; Transmittance; Layer (electronics); Etching (microfabrication); Fingerprint (computing); Electrical engineering; Nanotechnology; Computer science; Engineering; Chemistry","score_opus":0.014716990462061529,"score_gpt":0.2131479868500029,"score_spread":0.19843099638794137,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2485714772","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.84812266,0.0015621788,0.13339747,0.0006192845,0.00059439463,0.000050559833,0.0010544646,0.0023883993,0.012210525],"genre_scores_gemma":[0.9706598,0.0004194799,0.024017436,0.000116093994,0.000024207064,0.000018031003,0.0002554929,0.0000725666,0.004416941],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999528,0.0000024395658,0.0000025200613,0.000011998349,0.000018144545,0.000012157311],"domain_scores_gemma":[0.9999696,0.000005332872,0.0000061886826,0.0000050830263,0.000008174961,0.000005563457],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00004053257,0.00017945899,0.00014168481,0.00011540384,0.00011775616,0.00021744095,0.00025921062,0.00040483,0.0016421395],"category_scores_gemma":[0.000118498916,0.000106369815,0.00024242947,0.00012338188,0.00013730435,0.00033433276,0.00012284081,0.00020192353,0.0005399552],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000065335684,0.0000055984074,0.00028740134,0.00007709136,0.0000070422634,0.00030692253,0.000033227454,0.0005848116,0.9925632,0.00049722777,0.0007143319,0.004857781],"study_design_scores_gemma":[0.000017240727,0.00015145694,0.00212603,0.0000108835075,0.00003261285,0.0004989828,0.000045422566,0.011339448,0.9783573,0.00041244345,0.0069903964,0.000017668337],"about_ca_topic_score_codex":0.0010460818,"about_ca_topic_score_gemma":0.0011878535,"teacher_disagreement_score":0.0016421395,"about_ca_system_score_codex":0.00012056568,"about_ca_system_score_gemma":0.00010673387,"threshold_uncertainty_score":0.0054935217},"labels":[],"label_agreement":null},{"id":"W2490313200","doi":"10.1017/cbo9780511998096","title":"Thin Film Transistor Circuits and Systems","year":2013,"lang":"en","type":"book","venue":"Cambridge University Press eBooks","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":22,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"IGNIS Innovation (Canada)","funders":"","keywords":"Principal (computer security); Electronics; Transistor; Electronic circuit; Fabrication; Thin-film transistor; Computer science; Circuit design; Electrical engineering; Engineering; Electronic engineering; Systems engineering; Nanotechnology; Materials science; Layer (electronics)","score_opus":0.013981505836511586,"score_gpt":0.1582574847703124,"score_spread":0.1442759789338008,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2490313200","genre_codex":"other","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.0015625762,0.23468783,0.08489468,0.003650022,0.015496328,0.00028642587,0.00079084345,0.0022253103,0.6564059],"genre_scores_gemma":[0.008140222,0.10686496,0.04340927,0.0020437317,0.0016403588,0.00025679675,0.0006897562,0.00038579493,0.83656913],"study_design_codex":"not_applicable","study_design_gemma":"not_applicable","domain_scores_codex":[0.99956125,0.000030966108,0.000017901873,0.0000621434,0.00030066507,0.00002707367],"domain_scores_gemma":[0.9998385,0.00005638693,0.000008883917,0.000024879446,0.000059886865,0.00001142041],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00023281376,0.0011849394,0.00080357614,0.0011124808,0.0008042376,0.0027030522,0.001297187,0.0012762011,0.039970238],"category_scores_gemma":[0.00053902913,0.00058564125,0.00045046347,0.0013246894,0.00085680117,0.0024725986,0.0011347061,0.0022802665,0.030583294],"study_design_candidate":"not_applicable","study_design_consensus":"not_applicable","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00002314577,0.000043863514,0.000072902665,0.001382022,0.000042251853,0.0002414931,0.00025735874,0.0015941875,0.015582733,0.18100783,0.41676742,0.38298488],"study_design_scores_gemma":[0.0000024241826,0.000013295142,0.000042995325,0.000109561144,0.0000042145207,0.00019565671,0.000016072217,0.0006911831,0.0012851547,0.012137277,0.98549545,0.000006685039],"about_ca_topic_score_codex":0.0007167137,"about_ca_topic_score_gemma":0.001296912,"teacher_disagreement_score":0.039970238,"about_ca_system_score_codex":0.0008259963,"about_ca_system_score_gemma":0.00077236706,"threshold_uncertainty_score":0.13371378},"labels":[],"label_agreement":null},{"id":"W2508329824","doi":"10.1111/jace.14459","title":"Effects of Solution History on Sol‐Gel Processed Tin‐Oxide Thin‐Film Transistors","year":2016,"lang":"en","type":"article","venue":"Journal of the American Ceramic Society","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":7,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Western University","funders":"Natural Sciences and Engineering Research Council of Canada; Canada Foundation for Innovation; Conselho Nacional de Desenvolvimento Científico e Tecnológico; Coordenação de Aperfeiçoamento de Pessoal de Nível Superior; Canada Research Chairs; Ciência sem Fronteiras; Fundação de Amparo à Pesquisa do Estado de São Paulo","keywords":"Thin-film transistor; Materials science; Sol-gel; Tin oxide; Tin; Annealing (glass); Thin film; Reproducibility; Transistor; Homogeneity (statistics); Oxide thin-film transistor; Doping; Optoelectronics; Nanotechnology; Analytical Chemistry (journal); Layer (electronics); Composite material; Chemistry; Metallurgy; Computer science; Chromatography; Electrical engineering","score_opus":0.006054940507160977,"score_gpt":0.18692241279733132,"score_spread":0.18086747229017033,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2508329824","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.995706,0.0018404071,0.0012955682,0.00006288887,0.00006820796,0.000025038402,0.00012243,0.00005243609,0.00082696346],"genre_scores_gemma":[0.99536264,0.001216351,0.001979827,0.00007264386,0.000025111513,0.000028109242,0.00016196468,0.000046815534,0.001106414],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99977964,0.00003848572,0.00002737873,0.00006097929,0.00005501045,0.000038417144],"domain_scores_gemma":[0.99944335,0.00028360434,0.00009129449,0.000040041006,0.000108157124,0.00003350641],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0003238234,0.00043325406,0.00026961535,0.00023821964,0.00020983847,0.0003942333,0.00025086632,0.000340541,0.001158772],"category_scores_gemma":[0.0009970616,0.00030544412,0.00021769363,0.00021715398,0.0002415755,0.00041673533,0.00018362694,0.0003487068,0.00017766599],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00017761305,0.000022154498,0.00048864604,0.00006868961,0.000017097935,0.00011727297,0.00009292338,0.0001820768,0.9967249,0.00003466239,0.000029536159,0.0020444628],"study_design_scores_gemma":[0.000008240156,0.0002789637,0.002041638,0.000006865422,0.000035293837,0.00007711861,0.00004457051,0.00083745556,0.99603903,0.000014604529,0.0006104915,0.000005717509],"about_ca_topic_score_codex":0.001200918,"about_ca_topic_score_gemma":0.0019678345,"teacher_disagreement_score":0.001200918,"about_ca_system_score_codex":0.00032602646,"about_ca_system_score_gemma":0.00019813735,"threshold_uncertainty_score":0.0038765073},"labels":[],"label_agreement":null},{"id":"W2515531025","doi":"10.1149/ma2016-02/53/4101","title":"Vertical Oxide Thin-Film Transistor with Solution-Processed Channel Define Layer","year":2016,"lang":"en","type":"article","venue":"ECS Meeting Abstracts","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Kootenay Association for Science & Technology","funders":"","keywords":"Thin-film transistor; Materials science; Optoelectronics; Channel (broadcasting); Transistor; Layer (electronics); AMOLED; Oxide thin-film transistor; Process (computing); Active matrix; Electrical engineering; Nanotechnology; Computer science; Engineering; Voltage","score_opus":0.014684441582068906,"score_gpt":0.2019292954643451,"score_spread":0.18724485388227619,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2515531025","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9324377,0.005878713,0.031371552,0.0014280395,0.001726332,0.0001641922,0.0017810042,0.0018199249,0.02339243],"genre_scores_gemma":[0.9728941,0.0012648382,0.018032683,0.00022538332,0.00014570364,0.00006076486,0.0004747902,0.000035469053,0.0068663443],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99986994,0.000005069149,0.000006457993,0.00004066906,0.000051215546,0.000026577827],"domain_scores_gemma":[0.9999174,0.000011659959,0.000023395107,0.0000075072644,0.000026095171,0.00001398748],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00007795708,0.00022110924,0.00024715252,0.00016559387,0.00017002765,0.0003069414,0.00078425853,0.00045990196,0.0012631399],"category_scores_gemma":[0.00014867763,0.00014564367,0.0002107528,0.00023381368,0.00014411427,0.0004607034,0.00019649396,0.00025221318,0.0004948324],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00006915205,0.000053618136,0.00057263573,0.00017999634,0.000022132885,0.00031265177,0.000029125551,0.00030757565,0.9886464,0.0015467847,0.0027076264,0.0055522854],"study_design_scores_gemma":[0.00011513087,0.0008748206,0.0022205128,0.000037163652,0.000082129256,0.00067339273,0.000033538847,0.020294337,0.95768815,0.00044619167,0.017500859,0.000033794066],"about_ca_topic_score_codex":0.0014137715,"about_ca_topic_score_gemma":0.0025370403,"teacher_disagreement_score":0.0014137715,"about_ca_system_score_codex":0.0005327003,"about_ca_system_score_gemma":0.00035465232,"threshold_uncertainty_score":0.0042256117},"labels":[],"label_agreement":null},{"id":"W2516007619","doi":"10.1149/ma2016-02/33/2140","title":"(Invited) Selection of Channel Layer for the Vertical Oxide TFT","year":2016,"lang":"en","type":"article","venue":"ECS Meeting Abstracts","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Kootenay Association for Science & Technology","funders":"","keywords":"Thin-film transistor; Oxide thin-film transistor; Pixel; Transistor; Channel (broadcasting); Optoelectronics; Liquid-crystal display; Materials science; Threshold voltage; OLED; Computer science; Voltage; Layer (electronics); Electrical engineering; Nanotechnology; Engineering; Telecommunications; Artificial intelligence","score_opus":0.018899792358334257,"score_gpt":0.22230203543603574,"score_spread":0.2034022430777015,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2516007619","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.7248179,0.018640406,0.096090846,0.007509473,0.009709212,0.0004906327,0.0052213087,0.003891691,0.13362858],"genre_scores_gemma":[0.89183444,0.004249762,0.041405007,0.0010226418,0.0004234938,0.00021874283,0.0021559373,0.000256675,0.058433313],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99993336,0.0000025549264,0.0000028183395,0.00002008969,0.00001864772,0.000022494409],"domain_scores_gemma":[0.9999552,0.000004069431,0.000006284282,0.0000036291183,0.000021091595,0.0000096525955],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000094599905,0.00024580312,0.0001341217,0.0001954066,0.0002103864,0.00026422023,0.00030526187,0.00048940163,0.0060582943],"category_scores_gemma":[0.00012588142,0.000108475935,0.0001945145,0.00019299074,0.00008089139,0.00035544386,0.00016800224,0.0002759434,0.0024174568],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00013803884,0.000016891716,0.00041503977,0.00021267988,0.000008567395,0.00023473612,0.000034726916,0.00012427532,0.9691357,0.001150044,0.011443225,0.017086033],"study_design_scores_gemma":[0.000044069857,0.00022526729,0.0019364404,0.000021378737,0.000027508104,0.0005929968,0.00006113005,0.0021922288,0.9181498,0.0002965958,0.076425746,0.0000267807],"about_ca_topic_score_codex":0.0009064318,"about_ca_topic_score_gemma":0.001507145,"teacher_disagreement_score":0.0060582943,"about_ca_system_score_codex":0.00025001244,"about_ca_system_score_gemma":0.00017756168,"threshold_uncertainty_score":0.02026707},"labels":[],"label_agreement":null},{"id":"W2517077054","doi":"10.1149/ma2016-02/53/3969","title":"Bottom-Gate Self-Aligned Homojunction TFT with Double Oxide Semiconducting Layers","year":2016,"lang":"en","type":"article","venue":"ECS Meeting Abstracts","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Kootenay Association for Science & Technology","funders":"","keywords":"Materials science; Thin-film transistor; Optoelectronics; Transistor; Parasitic capacitance; Etching (microfabrication); Oxide thin-film transistor; Homojunction; Doping; Dopant; Gate oxide; Substrate (aquarium); Oxide; Electrode; Capacitance; Layer (electronics); Nanotechnology; Electrical engineering; Voltage","score_opus":0.01079446830977168,"score_gpt":0.19628978735146255,"score_spread":0.18549531904169086,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2517077054","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.97534525,0.001523426,0.017317893,0.0001740622,0.00029247004,0.00005990274,0.0007948613,0.00050463877,0.003987486],"genre_scores_gemma":[0.9812587,0.0006347458,0.014858666,0.00007128814,0.000053196563,0.00003973818,0.00035981348,0.000021444297,0.002702364],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99991536,0.0000027769167,0.0000042404026,0.000035311914,0.000027704906,0.00001454981],"domain_scores_gemma":[0.99996233,0.0000033178062,0.00000963918,0.0000071665913,0.000008552252,0.000008914427],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00005199643,0.00024484226,0.00023911259,0.00016127693,0.00013208909,0.0002005212,0.0004897369,0.00035469563,0.00046476917],"category_scores_gemma":[0.000067393434,0.00018404938,0.00019156697,0.00021724345,0.00011968254,0.00023040653,0.000096630894,0.00018367631,0.00026439334],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000015873771,0.000008681609,0.00021814379,0.00003951688,0.0000053619747,0.000101717334,0.000008350311,0.00009584291,0.9980592,0.0001127291,0.00016364193,0.0011709911],"study_design_scores_gemma":[0.00002229113,0.0002790323,0.0049910387,0.0000067277224,0.000043447235,0.00056022906,0.000017698514,0.0074485824,0.98278093,0.000060703118,0.0037768988,0.000012423424],"about_ca_topic_score_codex":0.00086245406,"about_ca_topic_score_gemma":0.0015839715,"teacher_disagreement_score":0.00086245406,"about_ca_system_score_codex":0.00025439737,"about_ca_system_score_gemma":0.00015428597,"threshold_uncertainty_score":0.001845777},"labels":[],"label_agreement":null},{"id":"W2517562571","doi":"10.1109/plasma.2016.7534230","title":"Plasma enhanced atomic layer deposition and laser plasma deposition of ultra-thin ZnO films for Schottky barrier devices","year":2016,"lang":"en","type":"article","venue":"","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Alberta","funders":"","keywords":"Materials science; Optoelectronics; Thin-film transistor; Atomic layer deposition; Flexible display; Thin film; Schottky barrier; Pulsed laser deposition; Sapphire; Light-emitting diode; Layer (electronics); Band gap; Flexible electronics; Graphene; Wide-bandgap semiconductor; Plasma; Exciton; Diode; Laser; Nanotechnology; Optics","score_opus":0.008184616477786023,"score_gpt":0.20629337772536036,"score_spread":0.19810876124757434,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2517562571","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.8241108,0.029234735,0.12132884,0.00078969926,0.0014591468,0.00041541387,0.0022602824,0.0010201648,0.019380955],"genre_scores_gemma":[0.92722785,0.0058612823,0.06178162,0.000086406275,0.000048987487,0.000119990334,0.00042781734,0.000084169544,0.0043619038],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99991393,0.0000031286022,0.0000050006843,0.00002211611,0.000042013453,0.000013811322],"domain_scores_gemma":[0.99995744,0.0000071523004,0.000011312272,0.0000054313587,0.000012667356,0.0000059674962],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00008671214,0.00024692967,0.0002148349,0.00020244556,0.0001448494,0.00023693958,0.00046417012,0.00031267217,0.0009390586],"category_scores_gemma":[0.00017300273,0.00023426981,0.00025136216,0.00023185127,0.00010476133,0.00028493302,0.00016039542,0.00043587395,0.00037374307],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000014342143,0.000007838711,0.00007866506,0.00009226694,0.0000031900454,0.0000636105,0.000015588574,0.0001834034,0.996439,0.00030517264,0.00019059482,0.0026063337],"study_design_scores_gemma":[0.000020656691,0.00008041561,0.0018040799,0.000013907185,0.000009396236,0.0002568739,0.000016963495,0.0043463525,0.9857861,0.00018692073,0.0074686166,0.000009720899],"about_ca_topic_score_codex":0.0009315038,"about_ca_topic_score_gemma":0.0015466426,"teacher_disagreement_score":0.0009390586,"about_ca_system_score_codex":0.00037045017,"about_ca_system_score_gemma":0.00017041086,"threshold_uncertainty_score":0.0031415224},"labels":[],"label_agreement":null},{"id":"W2520694349","doi":"10.1149/ma2016-02/37/2318","title":"High Photoresponsivity Multilayer MoS<sub>2</sub> Thin-Film Transistors with Local Bottom Gate Structure","year":2016,"lang":"en","type":"article","venue":"ECS Meeting Abstracts","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Optoelectronics; Materials science; Thin-film transistor; Photodiode; Photosensitivity; Transistor; Band gap; Active layer; Amorphous solid; Layer (electronics); Nanotechnology; Electrical engineering; Chemistry","score_opus":0.0058237881139903535,"score_gpt":0.18141950296631976,"score_spread":0.17559571485232942,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2520694349","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99449265,0.000630353,0.0030867509,0.000040702722,0.000029946372,0.000011585128,0.0001960057,0.000189659,0.001322329],"genre_scores_gemma":[0.9950701,0.00037058274,0.0032273768,0.000028925368,0.000012561113,0.00000920366,0.0001513566,0.000016774839,0.0011131901],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.999941,0.000003177099,0.000004055012,0.000012908289,0.000020976813,0.00001794242],"domain_scores_gemma":[0.9999336,0.000008373609,0.00001879063,0.000007931196,0.000018044044,0.0000132516325],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00005404081,0.00032413536,0.00019980685,0.00014336988,0.00009344343,0.00021873058,0.0001674976,0.00014835659,0.0005763771],"category_scores_gemma":[0.00009060882,0.00011268611,0.00017078694,0.00015421979,0.00010527195,0.00023642622,0.00017087653,0.00020407527,0.00015896556],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000011649271,0.0000028834656,0.00022474366,0.000016529862,0.000003989712,0.000026434556,0.0000041583967,0.000067110166,0.9989342,0.00001921756,0.00004471247,0.0006442994],"study_design_scores_gemma":[0.000006652323,0.0001658374,0.0053080413,0.00000277463,0.000024964575,0.00016373066,0.000014614421,0.0018572251,0.99127907,0.000016968455,0.0011558841,0.0000043081327],"about_ca_topic_score_codex":0.00079786393,"about_ca_topic_score_gemma":0.0020556122,"teacher_disagreement_score":0.00079786393,"about_ca_system_score_codex":0.00022739737,"about_ca_system_score_gemma":0.00006421989,"threshold_uncertainty_score":0.0019281507},"labels":[],"label_agreement":null},{"id":"W2521107426","doi":"10.11159/eee16.132","title":"Electrical Conductivity Extracted From Optical Characterization of Polysilicon Films","year":2016,"lang":"en","type":"article","venue":"Proceedings of the World Congress on Electrical Engineering and Computer Systems and Science","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":false,"route_ca_venue":true,"route_about_ca":false,"ca_institutions":"","funders":"","keywords":"Materials science; Characterization (materials science); Electrical resistivity and conductivity; Conductivity; Optoelectronics; Silicon; Electrical engineering; Nanotechnology; Chemistry; Engineering","score_opus":0.006203597807579554,"score_gpt":0.17864326124446736,"score_spread":0.1724396634368878,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2521107426","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99116755,0.00046910922,0.005170216,0.000044397762,0.00002393294,0.000010574245,0.00080829015,0.00009226633,0.0022136013],"genre_scores_gemma":[0.99636096,0.00020418996,0.0021338896,0.000009796472,0.0000055532223,0.000009070977,0.00039685442,0.000014941199,0.000864666],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99992275,0.000006050472,0.0000066689513,0.000019481904,0.000035493005,0.000009522051],"domain_scores_gemma":[0.999884,0.000037190654,0.000021675063,0.000012316475,0.00003836042,0.0000063831494],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00007393516,0.00028242907,0.00010584207,0.0003044513,0.000095327334,0.00022408772,0.00015228635,0.00024304578,0.0010540737],"category_scores_gemma":[0.00025545637,0.00009412417,0.000109999535,0.00031532958,0.000106078,0.00023406326,0.00006754424,0.00013927014,0.0001895968],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00005579256,0.000010391289,0.0011660451,0.00006498918,0.0000069435587,0.00007335773,0.000039471983,0.00061442325,0.99345076,0.000103687045,0.00009935566,0.004314766],"study_design_scores_gemma":[0.0000039821207,0.00010462171,0.011414922,0.000008059163,0.000018757853,0.00014817678,0.00006161624,0.006098688,0.980805,0.000071398295,0.0012580891,0.0000068979707],"about_ca_topic_score_codex":0.00030738884,"about_ca_topic_score_gemma":0.00045631395,"teacher_disagreement_score":0.0010540737,"about_ca_system_score_codex":0.00018196467,"about_ca_system_score_gemma":0.000078587625,"threshold_uncertainty_score":0.0035262704},"labels":[],"label_agreement":null},{"id":"W2523799647","doi":"10.1109/jdt.2016.2561841","title":"Low-Power Bootstrapped Rail-to-Rail Logic Gates for Thin-Film Applications","year":2016,"lang":"en","type":"article","venue":"Journal of Display Technology","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":16,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Natural Sciences and Engineering Research Council of Canada; University of Waterloo","keywords":"Thin-film transistor; Logic gate; Materials science; Transistor; Electrical engineering; Logic level; Optoelectronics; Inverter; Electronic engineering; Power (physics); Voltage; Engineering; Nanotechnology; Physics","score_opus":0.007547696816797617,"score_gpt":0.23204305154506458,"score_spread":0.22449535472826695,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2523799647","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.6934891,0.0025160953,0.28216523,0.00043098984,0.00021169521,0.00014511975,0.00047299283,0.0038214093,0.016747383],"genre_scores_gemma":[0.96490735,0.00044696068,0.031028278,0.00007155552,0.000028358669,0.000022132268,0.0000979834,0.000060549697,0.003336795],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99996054,0.000004088954,0.0000021176327,0.0000064333312,0.000018988067,0.0000078152825],"domain_scores_gemma":[0.99990726,0.00003660797,0.000016815922,0.0000136689005,0.000019018444,0.0000066320363],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000059512862,0.00020493731,0.00013537703,0.00014582573,0.00014176224,0.00037064197,0.00069413544,0.00022120854,0.002110716],"category_scores_gemma":[0.00020396867,0.00008307614,0.00012890887,0.00014236193,0.00015064639,0.00046173765,0.00016701675,0.0002465427,0.00034859378],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00019644124,0.00004084692,0.0006692783,0.00025468558,0.00002231283,0.00027393072,0.00006385553,0.004769493,0.92804325,0.0044880807,0.0012771568,0.059900556],"study_design_scores_gemma":[0.000053401298,0.0007482486,0.0019629807,0.00005404871,0.00006937662,0.0005280163,0.000049049653,0.13349698,0.84383506,0.003273222,0.015900623,0.000028901537],"about_ca_topic_score_codex":0.00047086077,"about_ca_topic_score_gemma":0.0012518496,"teacher_disagreement_score":0.002110716,"about_ca_system_score_codex":0.00026014104,"about_ca_system_score_gemma":0.00015819167,"threshold_uncertainty_score":0.0070610642},"labels":[],"label_agreement":null},{"id":"W2526512669","doi":"","title":"High performance TFT with low power consumption ReRAM by high-K gate insulation film","year":2016,"lang":"en","type":"article","venue":"","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Northern Alberta Institute of Technology","funders":"","keywords":"Materials science; Thin-film transistor; Resistive random-access memory; Optoelectronics; Power consumption; Electrical engineering; Power (physics); Composite material; Engineering; Voltage; Layer (electronics)","score_opus":0.0036690816237832996,"score_gpt":0.16111495041268276,"score_spread":0.15744586878889946,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2526512669","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.97992903,0.0025663192,0.008252516,0.00030771625,0.00023513482,0.000029568,0.0003204516,0.00085370755,0.00750558],"genre_scores_gemma":[0.9907855,0.00040238013,0.0042078765,0.00003955523,0.000048570593,0.000010798834,0.0001820655,0.00009540172,0.004227884],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999149,0.0000050920003,0.000004725981,0.000021163662,0.00002853466,0.000025598996],"domain_scores_gemma":[0.999889,0.00002204819,0.000019213268,0.000020464708,0.00003087307,0.000018388393],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00010315079,0.0002336684,0.0002894596,0.00018855765,0.00022796546,0.00036032134,0.00048630938,0.00032867512,0.0014850165],"category_scores_gemma":[0.00026865772,0.00017732685,0.00013177117,0.00017993516,0.00016008616,0.000502787,0.00017817444,0.0003576775,0.0006724323],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0001154427,0.00001472091,0.00031211384,0.00009238297,0.000011740452,0.0003011045,0.00007080567,0.00014259758,0.99349254,0.00029637892,0.0007993224,0.0043508816],"study_design_scores_gemma":[0.00003303197,0.00034578526,0.0033256586,0.000020250665,0.000040519582,0.0008137237,0.000050070328,0.0023222805,0.9861979,0.00013277197,0.006705444,0.000012452584],"about_ca_topic_score_codex":0.0006424448,"about_ca_topic_score_gemma":0.0013261997,"teacher_disagreement_score":0.0014850165,"about_ca_system_score_codex":0.00023106675,"about_ca_system_score_gemma":0.00015448338,"threshold_uncertainty_score":0.0049678683},"labels":[],"label_agreement":null},{"id":"W2528183764","doi":"10.1063/1.4963122","title":"A universal feature in the optical absorption spectrum associated with hydrogenated amorphous silicon: A dimensionless joint density of states analysis","year":2016,"lang":"en","type":"article","venue":"Journal of Applied Physics","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":12,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of British Columbia, Okanagan Campus; University of British Columbia; University of Windsor","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Dimensionless quantity; Amorphous silicon; Amorphous solid; Materials science; Silicon; Formalism (music); Absorption spectroscopy; Density of states; Absorption (acoustics); Optical density; Molecular physics; Condensed matter physics; Optics; Physics; Optoelectronics; Chemistry; Thermodynamics; Crystallography; Crystalline silicon; Composite material","score_opus":0.006506741895012829,"score_gpt":0.17471771091805902,"score_spread":0.1682109690230462,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2528183764","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.83229744,0.00071349915,0.15809457,0.00014991513,0.000032979315,0.000042491753,0.0005875998,0.00049671234,0.00758478],"genre_scores_gemma":[0.99106723,0.00017211368,0.008226337,0.000019582381,0.000008251236,0.000029965231,0.00019463235,0.00002941363,0.00025244412],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99972266,0.00006244224,0.000016170887,0.000048618982,0.0001227621,0.00002731583],"domain_scores_gemma":[0.9985839,0.00087245123,0.00016763785,0.00023893813,0.00010383816,0.000033351724],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00070486224,0.0002555416,0.0003160284,0.001690145,0.0002510879,0.0006397222,0.00045144165,0.0003637135,0.0013047353],"category_scores_gemma":[0.0025053513,0.00013917548,0.0003108795,0.0010827184,0.001163439,0.0011563287,0.00039371403,0.00058486057,0.00009400613],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0004969641,0.00022656299,0.0146536175,0.0007642481,0.00024570158,0.0008212982,0.001288655,0.07264304,0.6004989,0.26439777,0.001351105,0.042612158],"study_design_scores_gemma":[0.000036114965,0.0004283308,0.057723667,0.00008814433,0.00010259057,0.0010023338,0.00065917807,0.6386461,0.17092174,0.12675771,0.003449542,0.00018454755],"about_ca_topic_score_codex":0.00032463882,"about_ca_topic_score_gemma":0.00020540509,"teacher_disagreement_score":0.001690145,"about_ca_system_score_codex":0.00021425557,"about_ca_system_score_gemma":0.00016568674,"threshold_uncertainty_score":0.0043647885},"labels":[],"label_agreement":null},{"id":"W2540215122","doi":"10.1109/icm.2005.1590095","title":"Characterization of Low-Temperature Stress-Induced Crystallization of a-Si on Flexible Glass Substrates by Transmission Electron Microscopy and Raman Spectroscopy","year":2006,"lang":"en","type":"article","venue":"","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":3,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Acadia University","funders":"University of Tehran","keywords":"Materials science; Crystallinity; Raman spectroscopy; Transmission electron microscopy; Amorphous solid; Silicon; Composite material; Crystallization; Amorphous silicon; Scanning electron microscope; Ultimate tensile strength; Electron diffraction; Stress (linguistics); Layer (electronics); Crystallography; Chemical engineering; Crystalline silicon; Diffraction; Nanotechnology; Optoelectronics; Optics; Chemistry","score_opus":0.003684905722757143,"score_gpt":0.20361995100632915,"score_spread":0.199935045283572,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2540215122","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99741685,0.00017730193,0.0015516891,0.00001445858,0.000005257367,0.000013064008,0.00016610307,0.000030680123,0.00062456995],"genre_scores_gemma":[0.99741036,0.00019432408,0.001796431,0.0000072769953,0.0000030219476,0.000016913811,0.00015283277,0.000013787493,0.00040512532],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999323,0.0000040818604,0.000004924472,0.000012094167,0.000031526557,0.000015154633],"domain_scores_gemma":[0.99981564,0.00006377015,0.00003623447,0.000021677384,0.000042766613,0.00001985815],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00010663783,0.00019887892,0.00015590206,0.00021569015,0.00020705682,0.00020848695,0.00014116373,0.00012370548,0.0007818096],"category_scores_gemma":[0.00020174898,0.00012646035,0.00013506718,0.00018686023,0.00027288057,0.00013026911,0.00011492494,0.00021431707,0.00011761801],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000011999147,0.0000029035834,0.00020039377,0.000012727949,0.0000018940431,0.000033669872,0.000020888781,0.000063301086,0.99931383,0.000022657543,0.000006987556,0.00030878375],"study_design_scores_gemma":[0.0000041041408,0.00006502096,0.010165265,0.0000033076346,0.0000048496777,0.00008066802,0.00006126362,0.0013817344,0.9879546,0.000026856676,0.00024785826,0.000004391978],"about_ca_topic_score_codex":0.0020280925,"about_ca_topic_score_gemma":0.0028239004,"teacher_disagreement_score":0.0020280925,"about_ca_system_score_codex":0.00021550473,"about_ca_system_score_gemma":0.00018605273,"threshold_uncertainty_score":0.004032612},"labels":[],"label_agreement":null},{"id":"W2550109520","doi":"10.1149/ma2011-01/20/1292","title":"Effects of Microstructural Properties of Organic Semiconductors on Electronic Transport and Aging of Thin Film Transistors and Photovoltaic Devices","year":2011,"lang":"en","type":"article","venue":"ECS Meeting Abstracts","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Simon Fraser University; University of British Columbia","funders":"","keywords":"Materials science; Photovoltaic system; Optoelectronics; Semiconductor; Organic semiconductor; Thin-film transistor; Transistor; Engineering physics; Nanotechnology; Electrical engineering; Engineering; Layer (electronics)","score_opus":0.00873589658162493,"score_gpt":0.17383892292243242,"score_spread":0.16510302634080748,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2550109520","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.995904,0.0022834402,0.0005338567,0.000075453085,0.000040558345,0.000011545148,0.00028931268,0.000019532154,0.00084226154],"genre_scores_gemma":[0.99851257,0.00057813193,0.00018522915,0.000020140662,0.00001050991,0.0000054826864,0.00014475369,0.000012442215,0.0005308215],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99988043,0.000020485035,0.000008211493,0.000019589394,0.00004505653,0.000026251933],"domain_scores_gemma":[0.99931574,0.00033026497,0.000116477815,0.00004997452,0.00014339238,0.000044149405],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00024445413,0.00018813131,0.0001788432,0.00020957213,0.00027975743,0.0002627406,0.00015362054,0.00025251732,0.0026331588],"category_scores_gemma":[0.0011381378,0.00015264966,0.00017894997,0.00019034634,0.00019200513,0.00036831357,0.00013567439,0.0002554829,0.00021941925],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0010799743,0.00007137181,0.0066239787,0.00019007993,0.00006558295,0.00023627015,0.00008139963,0.0011516442,0.98135227,0.00021017308,0.000249616,0.008687543],"study_design_scores_gemma":[0.000014990575,0.0008582076,0.037137743,0.000017630548,0.00010379733,0.00023397512,0.00009148916,0.0033986527,0.9566483,0.00010953495,0.0013719408,0.000013773754],"about_ca_topic_score_codex":0.0010404156,"about_ca_topic_score_gemma":0.0015489676,"teacher_disagreement_score":0.0026331588,"about_ca_system_score_codex":0.0002457094,"about_ca_system_score_gemma":0.00013296964,"threshold_uncertainty_score":0.008808792},"labels":[],"label_agreement":null},{"id":"W2552869056","doi":"10.1109/jetcas.2016.2621348","title":"Device-Circuit Interactions and Impact on TFT Circuit-System Design","year":2016,"lang":"en","type":"article","venue":"IEEE Journal on Emerging and Selected Topics in Circuits and Systems","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":12,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"IGNIS Innovation (Canada)","funders":"","keywords":"Thin-film transistor; Compensation (psychology); Transistor; AMOLED; Electronic circuit; Electronic engineering; Circuit design; Computer science; Process (computing); Electrical engineering; Engineering; Materials science; Voltage; Active matrix","score_opus":0.03804462618207656,"score_gpt":0.25660275543447586,"score_spread":0.2185581292523993,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2552869056","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.327499,0.072440736,0.50792044,0.001828027,0.00075769494,0.00038482025,0.0005629481,0.0016449346,0.0869615],"genre_scores_gemma":[0.9120317,0.013422205,0.0661625,0.0003041935,0.00026750145,0.0001329444,0.00018681806,0.00034832978,0.007143893],"study_design_codex":"bench_or_experimental","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99945146,0.000109767825,0.00002206906,0.000107003994,0.00024377037,0.00006590942],"domain_scores_gemma":[0.9990778,0.00062204106,0.00008702582,0.000043383985,0.0001447482,0.000024982492],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0005872703,0.000546119,0.00057024613,0.00039787157,0.00049740856,0.0011042625,0.0007508751,0.00087220885,0.0024960795],"category_scores_gemma":[0.001659443,0.00032578353,0.0002948708,0.00035892442,0.0003726807,0.0011361971,0.00042226064,0.00072040403,0.0008873964],"study_design_candidate":"simulation_or_modeling","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00023376424,0.00008487083,0.0036377693,0.0024403832,0.00017158134,0.0009737934,0.00040792287,0.090606675,0.7095134,0.04216815,0.0020477555,0.14771384],"study_design_scores_gemma":[0.000032545315,0.0015215981,0.007120086,0.00034322313,0.00034999524,0.0034739168,0.00019957978,0.20444925,0.6511552,0.013156228,0.1180909,0.00010758013],"about_ca_topic_score_codex":0.00051050994,"about_ca_topic_score_gemma":0.00084658386,"teacher_disagreement_score":0.0024960795,"about_ca_system_score_codex":0.0015674273,"about_ca_system_score_gemma":0.00033963483,"threshold_uncertainty_score":0.011372507},"labels":[],"label_agreement":null},{"id":"W2565320267","doi":"10.1109/led.2016.2637823","title":"Microcrystalline Silicon Photodiode For Large Area NIR Light Detection Applications","year":2016,"lang":"en","type":"article","venue":"IEEE Electron Device Letters","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":6,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Photodiode; Optoelectronics; Detector; Materials science; Transistor; Silicon; Near-infrared spectroscopy; Thin-film transistor; Cyanine; Microcrystalline; Optics; Voltage; Electrical engineering; Physics; Nanotechnology; Chemistry; Engineering; Fluorescence","score_opus":0.0066313040411720885,"score_gpt":0.2022256324360489,"score_spread":0.1955943283948768,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2565320267","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.71783954,0.04526899,0.19013254,0.0018592412,0.0011491764,0.00029801767,0.001670377,0.002960029,0.03882212],"genre_scores_gemma":[0.87813956,0.007004941,0.09689845,0.00043380895,0.00018392983,0.000093591625,0.00052876776,0.00007109125,0.016645987],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99979347,0.000019247522,0.000008846024,0.000064850705,0.00009210518,0.000021456153],"domain_scores_gemma":[0.99979514,0.00007270216,0.00003273326,0.000023848525,0.000056482004,0.00001903313],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00012942037,0.0002765758,0.0002605573,0.00021140126,0.00020128168,0.0003958581,0.0006416454,0.00047677098,0.0020476903],"category_scores_gemma":[0.00024091742,0.00018769772,0.00027953056,0.00039444756,0.00017746232,0.00045084904,0.0002342727,0.00046630655,0.0008543273],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00007194983,0.000021419035,0.0007316737,0.00018822087,0.000019822617,0.00016884983,0.00002777068,0.00019176505,0.97243655,0.00057791674,0.0013091416,0.024254961],"study_design_scores_gemma":[0.000014573573,0.0004754528,0.0035237994,0.000018969637,0.000059780195,0.0014608557,0.00005323689,0.0043230364,0.96050125,0.00020922428,0.02934317,0.000016649892],"about_ca_topic_score_codex":0.0006246164,"about_ca_topic_score_gemma":0.0025139458,"teacher_disagreement_score":0.0020476903,"about_ca_system_score_codex":0.00053503446,"about_ca_system_score_gemma":0.000307631,"threshold_uncertainty_score":0.006850183},"labels":[],"label_agreement":null},{"id":"W2567902378","doi":"10.1063/1.4973987","title":"Light trapping in a-Si:H thin film solar cells using silver nanostructures","year":2017,"lang":"en","type":"article","venue":"AIP Advances","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":16,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Victoria","funders":"","keywords":"Materials science; Plasmonic solar cell; Plasmon; Photocurrent; Nanosphere lithography; Optoelectronics; Amorphous silicon; Nanoparticle; Nanotechnology; Solar cell; Thin film; Surface plasmon resonance; Nanostructure; Silicon; Polymer solar cell; Crystalline silicon; Fabrication","score_opus":0.011507181010446742,"score_gpt":0.23105240431498056,"score_spread":0.21954522330453383,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2567902378","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9956683,0.00021908198,0.0028598937,0.000031822008,0.0000069827915,0.000007662656,0.000037483685,0.000056090303,0.001112677],"genre_scores_gemma":[0.99688655,0.00014383256,0.0023668003,0.000008332153,0.0000022309537,0.000007660128,0.000027536717,0.0000068098634,0.00055026077],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999628,0.0000029281282,0.0000019309941,0.000008865283,0.00001757378,0.000005998385],"domain_scores_gemma":[0.9999572,0.000018433419,0.000008731788,0.000003593412,0.000007637071,0.000004463152],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00007059825,0.00012384534,0.0001439515,0.000112683745,0.00020374921,0.0003231822,0.00023760245,0.0002662158,0.0003762035],"category_scores_gemma":[0.00011796429,0.00015999933,0.00015486995,0.000100240875,0.00023732462,0.0002045578,0.00010822083,0.000168121,0.00012942654],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000087102664,0.0000742078,0.0014165239,0.0001433825,0.000018818508,0.00023986185,0.000067190165,0.023454826,0.96899015,0.000554778,0.00012296115,0.004830125],"study_design_scores_gemma":[0.000039842278,0.00025166018,0.0043255007,0.000009923507,0.00002436053,0.000105225816,0.00010646313,0.24004231,0.754105,0.00035623208,0.00062075653,0.000012785295],"about_ca_topic_score_codex":0.0021510997,"about_ca_topic_score_gemma":0.0023381582,"teacher_disagreement_score":0.0021510997,"about_ca_system_score_codex":0.00039660413,"about_ca_system_score_gemma":0.00020659003,"threshold_uncertainty_score":0.00427711},"labels":[],"label_agreement":null},{"id":"W2593678845","doi":"10.11591/ijece.v7i2.pp754-758","title":"Fabrication and Analysis of Amorphous Silicon TFT","year":2017,"lang":"en","type":"article","venue":"International Journal of Electrical and Computer Engineering (IJECE)","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"","funders":"International Development Research Centre","keywords":"Fabrication; Thin-film transistor; Materials science; Amorphous silicon; Silicon; Amorphous solid; Optoelectronics; Plasma-enhanced chemical vapor deposition; Layer (electronics); Oxide thin-film transistor; Nanotechnology; Crystalline silicon; Chemistry; Crystallography","score_opus":0.006046631166184537,"score_gpt":0.20767488135313208,"score_spread":0.20162825018694755,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2593678845","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9175943,0.0017863788,0.05985402,0.00029181357,0.00008077069,0.0000789878,0.002564699,0.0006927147,0.017056335],"genre_scores_gemma":[0.97773576,0.0006919111,0.017187094,0.000026298485,0.000011422882,0.000041621497,0.0010077861,0.000046586803,0.0032515328],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99992096,0.0000035483108,0.0000033757497,0.000018523646,0.000042580486,0.000011032741],"domain_scores_gemma":[0.99994636,0.000013659739,0.000007389454,0.0000059806134,0.00002361254,0.000003054371],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00007439217,0.0001377447,0.00020468462,0.000179362,0.00027663988,0.0002058572,0.00020111362,0.0002643351,0.0014801796],"category_scores_gemma":[0.00019336633,0.00007790015,0.00021540507,0.0003335922,0.000115152005,0.00021594284,0.00006441628,0.0001159053,0.00037834654],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00015307737,0.000033976296,0.0036409607,0.00037455905,0.000037276604,0.0007589358,0.00019681673,0.08335693,0.8861334,0.004271551,0.0016633334,0.01937931],"study_design_scores_gemma":[0.00003403707,0.00047461563,0.013147903,0.000035027482,0.000039969847,0.00051381113,0.0002180816,0.33665693,0.63030005,0.0019749785,0.016564973,0.000039604973],"about_ca_topic_score_codex":0.00373963,"about_ca_topic_score_gemma":0.0017725384,"teacher_disagreement_score":0.00373963,"about_ca_system_score_codex":0.00043328834,"about_ca_system_score_gemma":0.00023252759,"threshold_uncertainty_score":0.007435739},"labels":[],"label_agreement":null},{"id":"W2596531989","doi":"10.1557/proc-715-a24.3","title":"Large-Area Pulsed Laser Deposition of Silicon Carbide Films","year":2002,"lang":"en","type":"article","venue":"MRS Proceedings","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Western University; National Research Council Canada","funders":"National Research Council Canada","keywords":"Materials science; Excimer laser; Wafer; Auger electron spectroscopy; Silicon carbide; Scanning electron microscope; Silicon; Thin film; Optoelectronics; Laser; Amorphous solid; Pulsed laser deposition; Optics; Nanotechnology; Composite material; Crystallography","score_opus":0.01127613866572658,"score_gpt":0.1842768306482211,"score_spread":0.17300069198249451,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2596531989","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9860139,0.0021154326,0.0028153562,0.00022436077,0.00009770761,0.000028593178,0.00017491808,0.00014112373,0.008388677],"genre_scores_gemma":[0.987298,0.0010150204,0.004817346,0.00006556068,0.00004490626,0.000037036665,0.00020764544,0.000051388743,0.0064630834],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999101,0.0000046738496,0.0000032921916,0.000017581018,0.000047130976,0.000017165781],"domain_scores_gemma":[0.9998852,0.000052339212,0.00001246355,0.000016601141,0.000019585716,0.000013818422],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00013289093,0.00016347047,0.00029382884,0.00022499783,0.00036591984,0.00039192312,0.00035558164,0.00026962074,0.0018330675],"category_scores_gemma":[0.00023986494,0.00026496616,0.00011621884,0.00023656126,0.00022133766,0.00038175567,0.00031169236,0.0003779691,0.00031559152],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000038343045,0.000009615067,0.0000612865,0.000052285468,0.0000039668816,0.000067789144,0.000031137468,0.00012746957,0.99766845,0.00022010549,0.00019089131,0.0015286918],"study_design_scores_gemma":[0.00002694837,0.00008575478,0.0016821167,0.0000054105417,0.0000058360306,0.000116499425,0.000040892104,0.0017543822,0.9939243,0.00010624118,0.002246471,0.0000051436277],"about_ca_topic_score_codex":0.0011680095,"about_ca_topic_score_gemma":0.0037954925,"teacher_disagreement_score":0.0018330675,"about_ca_system_score_codex":0.00047431936,"about_ca_system_score_gemma":0.000343758,"threshold_uncertainty_score":0.006132245},"labels":[],"label_agreement":null},{"id":"W2600301737","doi":"10.1149/ma2012-01/16/706","title":"Mechanism of Device Degradation for InGaZnO TFTs by the Drain Bias Stress in Dark and Light Illumination","year":2012,"lang":"en","type":"article","venue":"ECS Meeting Abstracts","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Toronto","funders":"","keywords":"Degradation (telecommunications); Mechanism (biology); Materials science; Stress (linguistics); Optoelectronics; Thin-film transistor; Composite material; Computer science; Physics; Telecommunications; Layer (electronics)","score_opus":0.019607445008998112,"score_gpt":0.22662364624949183,"score_spread":0.20701620124049372,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2600301737","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.994009,0.0011360407,0.0018392558,0.00016830055,0.000039451967,0.00003167012,0.00043003904,0.00011301341,0.002233163],"genre_scores_gemma":[0.9977817,0.00025808712,0.0003258873,0.00004104278,0.000006363954,0.000010715208,0.00014350688,0.000007847028,0.0014248439],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99995756,0.0000036755566,0.0000021854974,0.000011153602,0.000010162174,0.000015363066],"domain_scores_gemma":[0.9999105,0.000029993103,0.00001650199,0.000014223949,0.000018338997,0.000010477565],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00012435514,0.00018195964,0.00016425498,0.00012956212,0.0002627897,0.00023442242,0.00029565507,0.00035409423,0.0025519803],"category_scores_gemma":[0.00015987443,0.000094390314,0.00019669437,0.000067911285,0.00034514806,0.00029244012,0.00007772125,0.0002724581,0.00030146705],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0004192102,0.000027560203,0.0010757855,0.00007262747,0.000007870269,0.00018159384,0.000095497875,0.00012995824,0.99543875,0.00035087374,0.00018850746,0.0020118358],"study_design_scores_gemma":[0.000027598682,0.00028747352,0.018733237,0.00001498788,0.00002815134,0.0003991445,0.00010792706,0.002534684,0.976188,0.00026306594,0.0014064533,0.000009357269],"about_ca_topic_score_codex":0.0012387047,"about_ca_topic_score_gemma":0.0009966053,"teacher_disagreement_score":0.0025519803,"about_ca_system_score_codex":0.0003154637,"about_ca_system_score_gemma":0.0001252491,"threshold_uncertainty_score":0.008537173},"labels":[],"label_agreement":null},{"id":"W2605402655","doi":"10.1557/proc-871-i9.4","title":"Fabrication of RR-P3HT-based TFTs using low-temperature PECVD silicon nitride passivation","year":2005,"lang":"en","type":"article","venue":"MRS Proceedings","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Materials science; Passivation; Thin-film transistor; Fabrication; Plasma-enhanced chemical vapor deposition; Optoelectronics; Substrate (aquarium); Wafer; Silicon nitride; Gate dielectric; Dielectric; Transistor; Nanotechnology; Chemical vapor deposition; Silicon; Layer (electronics); Electrical engineering; Voltage","score_opus":0.009584352132919893,"score_gpt":0.20667610744357262,"score_spread":0.19709175531065273,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2605402655","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9612031,0.0021527319,0.028634552,0.0002143054,0.00019677983,0.0001264818,0.0011255926,0.00058553624,0.0057607973],"genre_scores_gemma":[0.9523834,0.0013960404,0.038230974,0.00009456847,0.000039434606,0.00010926388,0.000976291,0.00012186418,0.0066482914],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998703,0.0000069962225,0.000010302482,0.000036970083,0.00004463745,0.00003088563],"domain_scores_gemma":[0.99985206,0.000041941075,0.000019500583,0.00003939301,0.000032553748,0.000014460223],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00021430336,0.0002396551,0.00038169976,0.00016613571,0.0003740118,0.0003458724,0.00056334503,0.0005216788,0.0010669876],"category_scores_gemma":[0.00037397936,0.00028077202,0.0002750548,0.00022043793,0.00021274814,0.00036324156,0.00015802748,0.00052029383,0.0007839182],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000017339342,0.0000057188727,0.000045709527,0.000034062905,0.000003838668,0.00004726073,0.000025596699,0.000066793706,0.9985348,0.00006245262,0.00007673866,0.0010796707],"study_design_scores_gemma":[0.0000042539295,0.000041984782,0.00081189,0.0000025090073,0.000008015237,0.000099481855,0.000008883843,0.00043666322,0.9974483,0.000023669338,0.0011103417,0.0000039659985],"about_ca_topic_score_codex":0.0013006373,"about_ca_topic_score_gemma":0.0023216356,"teacher_disagreement_score":0.0013006373,"about_ca_system_score_codex":0.00036102964,"about_ca_system_score_gemma":0.00026914125,"threshold_uncertainty_score":0.0035694242},"labels":[],"label_agreement":null},{"id":"W2606642939","doi":"10.1149/ma2011-01/20/1285","title":"Contact Effects and Hysteresis in Organic Thin Film Transistors","year":2011,"lang":"en","type":"article","venue":"ECS Meeting Abstracts","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McMaster University","funders":"","keywords":"Hysteresis; Materials science; Thin-film transistor; Thin film; Optoelectronics; Engineering physics; Composite material; Nanotechnology; Condensed matter physics; Engineering; Physics","score_opus":0.011572642603861025,"score_gpt":0.18467160798770826,"score_spread":0.17309896538384723,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2606642939","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9709072,0.010834991,0.004787623,0.0005684101,0.00023620743,0.000033482174,0.00020139832,0.00013550806,0.012295165],"genre_scores_gemma":[0.9948055,0.0012334068,0.00025585105,0.0000366892,0.000051657877,0.0000061094224,0.0000589519,0.000011152469,0.0035404924],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999143,0.000007935596,0.0000020932498,0.000009909624,0.00005066429,0.000015034191],"domain_scores_gemma":[0.99960107,0.000296205,0.000023879165,0.000017948383,0.00003820683,0.000022732915],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00011472095,0.000115550516,0.00018020025,0.00025901175,0.0002589298,0.00036194202,0.00027173667,0.00033639898,0.003785531],"category_scores_gemma":[0.00094577135,0.0001013574,0.00008746596,0.00025916047,0.000367013,0.00055238965,0.00018471657,0.00028072545,0.00020196666],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0009047512,0.00016796928,0.0023048758,0.0006808798,0.000043262706,0.0014589645,0.0003503247,0.001839421,0.9475878,0.009240522,0.002328859,0.03309244],"study_design_scores_gemma":[0.00016603942,0.0009935373,0.022922734,0.000098042045,0.00008826465,0.0015111646,0.0004615948,0.042259187,0.899344,0.01782334,0.014280702,0.00005136607],"about_ca_topic_score_codex":0.000498563,"about_ca_topic_score_gemma":0.00068296125,"teacher_disagreement_score":0.003785531,"about_ca_system_score_codex":0.0001767915,"about_ca_system_score_gemma":0.0000979025,"threshold_uncertainty_score":0.012663841},"labels":[],"label_agreement":null},{"id":"W2606752809","doi":"10.11159/icnnfc17.134","title":"Design of Solution-Processed ZnO/SnO2 Heterostructures for HighPerformance Thin Film Transistors","year":2017,"lang":"en","type":"article","venue":"Proceedings of the World Congress on Recent Advances in Nanotechnology","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":false,"route_ca_venue":true,"route_about_ca":false,"ca_institutions":"","funders":"Institute for Information and Communications Technology Promotion; Ministry of Science, ICT and Future Planning","keywords":"Heterojunction; Materials science; Thin-film transistor; Optoelectronics; Transistor; Thin film; Nanotechnology; Electrical engineering; Engineering; Layer (electronics)","score_opus":0.014078518391784476,"score_gpt":0.24666565873697727,"score_spread":0.2325871403451928,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2606752809","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.93288434,0.0030292266,0.053862777,0.00029820594,0.00038643894,0.00047028763,0.0011326665,0.00043565503,0.0075003],"genre_scores_gemma":[0.9525375,0.0012328847,0.044009924,0.000055718283,0.000032406282,0.00023294284,0.0003281027,0.000053934167,0.0015166317],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999306,0.000003730818,0.0000042628294,0.000024223946,0.000024007575,0.000013130462],"domain_scores_gemma":[0.9999424,0.000005116933,0.000014655039,0.0000029929924,0.000017915687,0.000016951639],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00012535197,0.00038554188,0.00030429865,0.0001646894,0.0002008084,0.0004165191,0.0007381334,0.00033141096,0.0006895846],"category_scores_gemma":[0.0001281264,0.0003129358,0.00024127857,0.00018060517,0.0001055213,0.00028139536,0.00013654733,0.00030251217,0.0003599761],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000024166631,0.000030041861,0.00010516564,0.000051825176,0.0000071719232,0.000036615285,0.000009800333,0.00061987026,0.9978302,0.0002700974,0.000073633215,0.0009413467],"study_design_scores_gemma":[0.00010457717,0.00031692648,0.001257701,0.000011913959,0.00003633866,0.000097962366,0.000040946095,0.030900355,0.96358114,0.00017301635,0.0034601889,0.000018949693],"about_ca_topic_score_codex":0.0014059405,"about_ca_topic_score_gemma":0.0049402867,"teacher_disagreement_score":0.0014059405,"about_ca_system_score_codex":0.00067535194,"about_ca_system_score_gemma":0.00040650216,"threshold_uncertainty_score":0.0049000382},"labels":[],"label_agreement":null},{"id":"W2609145917","doi":"","title":"A fast driving scheme for a-Si:H AMOLED displays based on voltage feedback","year":2005,"lang":"en","type":"article","venue":"UCL Discovery (University College London)","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"AMOLED; Scheme (mathematics); Voltage; Computer science; Materials science; Electrical engineering; Engineering; Mathematics; Thin-film transistor; Layer (electronics); Nanotechnology","score_opus":0.0057478763361002135,"score_gpt":0.17182505226695355,"score_spread":0.16607717593085333,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2609145917","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.58056015,0.0016793383,0.40018636,0.0009945149,0.0007529326,0.0004366686,0.00088852027,0.004718943,0.009782578],"genre_scores_gemma":[0.8432548,0.000525726,0.14667247,0.0003734579,0.00019963614,0.00017880427,0.00027586886,0.00023107282,0.00828823],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99986255,0.0000127614785,0.000006594832,0.00003446809,0.00006273291,0.00002100107],"domain_scores_gemma":[0.99970835,0.00011811444,0.00003812397,0.000034128705,0.00006172335,0.000039459344],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0001479558,0.0003001155,0.00017675947,0.00023441324,0.00026853685,0.00042446054,0.00097576453,0.00048287646,0.0018972016],"category_scores_gemma":[0.00026048752,0.00025965736,0.00015756181,0.00013614625,0.00029256477,0.0005858526,0.00031427524,0.00077411934,0.00072323333],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00005574542,0.000019293086,0.0000814758,0.000038498416,0.0000035894716,0.000041195533,0.000021557216,0.00008225795,0.9891537,0.00061469444,0.00039567307,0.009492415],"study_design_scores_gemma":[0.00002037492,0.0002258127,0.00057341665,0.0000046003006,0.000006562002,0.00028943428,0.000009828905,0.0044720215,0.9883636,0.00016210046,0.0058476534,0.000024545245],"about_ca_topic_score_codex":0.00045417476,"about_ca_topic_score_gemma":0.0010990911,"teacher_disagreement_score":0.0018972016,"about_ca_system_score_codex":0.00026829963,"about_ca_system_score_gemma":0.0002451319,"threshold_uncertainty_score":0.006346822},"labels":[],"label_agreement":null},{"id":"W2610947125","doi":"10.1149/ma2008-02/35/2315","title":"Improvement of Current Stability of Amorphous Oxide Thin-Film Transistors using SOG Passivation","year":2008,"lang":"en","type":"article","venue":"ECS Meeting Abstracts","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"SAIT Polytechnic","funders":"","keywords":"Passivation; Thin-film transistor; Materials science; Amorphous solid; Optoelectronics; Oxide thin-film transistor; Current (fluid); Transistor; Oxide; Engineering physics; Electrical engineering; Nanotechnology; Layer (electronics); Metallurgy; Engineering; Chemistry; Crystallography; Voltage","score_opus":0.03336483839860744,"score_gpt":0.23262325258680402,"score_spread":0.1992584141881966,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2610947125","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9959294,0.00084713014,0.0020384828,0.000066461354,0.000054483753,0.000009090477,0.000097876786,0.000087993176,0.0008690891],"genre_scores_gemma":[0.99771345,0.00022268287,0.0010614268,0.000014650707,0.000007661724,0.0000036471135,0.00007846946,0.000015815893,0.00088225957],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999465,0.0000041798185,0.0000042658658,0.000013844873,0.000015986756,0.000015226921],"domain_scores_gemma":[0.9998565,0.000039858336,0.000018849878,0.000022062175,0.000045880777,0.000016830165],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000112674395,0.00017486568,0.00020145217,0.0001284649,0.00014044516,0.00040592984,0.00020674353,0.00030423803,0.0009585872],"category_scores_gemma":[0.0003337576,0.00008105981,0.00014620164,0.000121170655,0.00017038225,0.00021890104,0.00012573265,0.00027859455,0.00021084989],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00007047112,0.0000067638366,0.00016380745,0.000015751893,0.0000042874817,0.00002588658,0.000014416931,0.000057118905,0.9987276,0.000060777365,0.000038029768,0.00081504707],"study_design_scores_gemma":[0.000007865258,0.00016606801,0.0011040998,0.000004689972,0.000016839427,0.000047138117,0.000015163315,0.0013461501,0.9967804,0.00003231988,0.00047731693,0.000001993529],"about_ca_topic_score_codex":0.00058379094,"about_ca_topic_score_gemma":0.0008753718,"teacher_disagreement_score":0.0009585872,"about_ca_system_score_codex":0.00016091917,"about_ca_system_score_gemma":0.00012456805,"threshold_uncertainty_score":0.0032067895},"labels":[],"label_agreement":null},{"id":"W2611147928","doi":"10.1149/ma2005-01/8/376","title":"The Importance of the Gate Dielectric in Organic and Polymeric Thin-Film Transistors","year":2006,"lang":"en","type":"article","venue":"ECS Meeting Abstracts","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McMaster University","funders":"","keywords":"Gate dielectric; Thin-film transistor; Materials science; Dielectric; Transistor; Optoelectronics; Organic semiconductor; Nanotechnology; Electrical engineering; Engineering; Voltage","score_opus":0.00452121450359872,"score_gpt":0.1765351149832111,"score_spread":0.17201390047961237,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2611147928","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.8628534,0.085092455,0.011762562,0.0024956905,0.0014209402,0.000075450196,0.00079760555,0.00015145799,0.03535045],"genre_scores_gemma":[0.96043396,0.025639024,0.0035090442,0.00036734313,0.00019502899,0.000019045201,0.00036815292,0.000041814877,0.00942667],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999193,0.000013841566,0.0000049154464,0.0000124814005,0.000031341664,0.000018105082],"domain_scores_gemma":[0.9998273,0.000095347954,0.000019461846,0.000012409293,0.000023558045,0.000021974602],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0001666145,0.00023939727,0.00014627358,0.00016720877,0.00025890337,0.0006255711,0.00031192246,0.00045177422,0.001983539],"category_scores_gemma":[0.00055087096,0.00013375924,0.00018746377,0.0001799458,0.0002931106,0.0006713025,0.00016024192,0.00042166052,0.00052878144],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0003999632,0.000035650573,0.00033857126,0.0005331688,0.00002186954,0.0005319641,0.000027769987,0.0002843221,0.97492313,0.004102219,0.00047599236,0.018325485],"study_design_scores_gemma":[0.000037899194,0.00058848714,0.0034167913,0.00009973173,0.000097243785,0.0015699944,0.000109555825,0.0016246467,0.9643958,0.0036926146,0.02434988,0.000017236593],"about_ca_topic_score_codex":0.0002890892,"about_ca_topic_score_gemma":0.000446229,"teacher_disagreement_score":0.001983539,"about_ca_system_score_codex":0.00017349832,"about_ca_system_score_gemma":0.00017600115,"threshold_uncertainty_score":0.006635666},"labels":[],"label_agreement":null},{"id":"W2618532816","doi":"10.1063/1.4984215","title":"Black silicon morphologies using conventional RIE processing","year":2017,"lang":"en","type":"article","venue":"AIP Advances","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":5,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Toronto","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Black silicon; Wafer; Silicon; Materials science; Anti-reflective coating; Reactive-ion etching; Refractive index; Etching (microfabrication); Optoelectronics; Yield (engineering); Range (aeronautics); Optics; Nanotechnology; Coating; Composite material","score_opus":0.027131389411501287,"score_gpt":0.27672960703521066,"score_spread":0.24959821762370937,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2618532816","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.921772,0.0007476491,0.054173656,0.00013660033,0.000106864194,0.00014157219,0.0015385817,0.0011939204,0.020189065],"genre_scores_gemma":[0.90455794,0.0011002988,0.081363514,0.00009430091,0.00001499695,0.00012809948,0.0017981605,0.00069395173,0.010248809],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998528,0.000006348395,0.000008211722,0.00004463484,0.000068163674,0.000019808725],"domain_scores_gemma":[0.99986756,0.000034616667,0.000024800502,0.000033978537,0.000032399515,0.0000066076827],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0001057047,0.00034002276,0.0001910369,0.0001898334,0.00017226314,0.0003831303,0.00039213858,0.00030942087,0.00329341],"category_scores_gemma":[0.00023516205,0.00028918294,0.00021236308,0.00017475415,0.00018805079,0.00021296003,0.0001717919,0.0004637597,0.0012413345],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000021092657,0.000011401424,0.00017343673,0.000074818054,0.0000073018327,0.00006675711,0.000039598173,0.0007623378,0.995445,0.00032698637,0.0001706827,0.0029004829],"study_design_scores_gemma":[0.000007847278,0.00005281646,0.0008302102,0.000004933984,0.000007247094,0.000116917116,0.000016262014,0.003713826,0.9920311,0.0001157702,0.0030967577,0.0000064414035],"about_ca_topic_score_codex":0.00046230535,"about_ca_topic_score_gemma":0.0011113521,"teacher_disagreement_score":0.00329341,"about_ca_system_score_codex":0.00022284409,"about_ca_system_score_gemma":0.00016637033,"threshold_uncertainty_score":0.011017621},"labels":[],"label_agreement":null},{"id":"W2620050818","doi":"10.11159/icnfa17.136","title":"Stability Enhancement in OPV: In-Situ Studies of Plasmonic Devices","year":2017,"lang":"en","type":"article","venue":"Proceedings of the World Congress on New Technologies","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":false,"route_ca_aff":false,"route_ca_fund":false,"route_ca_venue":true,"route_about_ca":false,"ca_institutions":"","funders":"","keywords":"Plasmon; In situ; Materials science; Optoelectronics; Nanotechnology; Chemistry","score_opus":0.035927808856567475,"score_gpt":0.27569764038698663,"score_spread":0.23976983153041914,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2620050818","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9908195,0.0009703268,0.0039372547,0.0001415906,0.000048946684,0.000018120987,0.00007838399,0.000038623053,0.0039472315],"genre_scores_gemma":[0.99635255,0.00031690413,0.0012235893,0.00003313248,0.000019237648,0.000012338059,0.00004109981,0.000020486985,0.0019806614],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99985945,0.000018800563,0.0000036529166,0.000039428254,0.000046716767,0.000031840515],"domain_scores_gemma":[0.99985445,0.000057781315,0.000027257884,0.000018743469,0.00003248845,0.000009125101],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00015772611,0.00027461565,0.00018326801,0.00014545603,0.00032871333,0.00052888604,0.00037587943,0.0003990257,0.001721454],"category_scores_gemma":[0.0003563688,0.00015842156,0.00014512936,0.00016352317,0.00039148587,0.00050063356,0.00027933688,0.00044885802,0.00022408325],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00006184774,0.000027395397,0.0001489943,0.00004973384,0.0000054183197,0.00004985931,0.00009449993,0.0001862832,0.9971222,0.00030495494,0.00012438068,0.0018243588],"study_design_scores_gemma":[0.0000109727625,0.00011778935,0.0011472683,0.000008130209,0.000010923294,0.000070950045,0.00011787565,0.003929947,0.9927471,0.00016058306,0.0016718315,0.0000065671625],"about_ca_topic_score_codex":0.0005890721,"about_ca_topic_score_gemma":0.00071138865,"teacher_disagreement_score":0.001721454,"about_ca_system_score_codex":0.00030006285,"about_ca_system_score_gemma":0.00007620241,"threshold_uncertainty_score":0.005758822},"labels":[],"label_agreement":null},{"id":"W2626962294","doi":"10.1109/jeds.2017.2706199","title":"Effect of Charge Retention of Non-Volatile Memory TFTs Under Multiple Read Cycles","year":2017,"lang":"en","type":"article","venue":"IEEE Journal of the Electron Devices Society","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":2,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Non-volatile memory; Materials science; Optoelectronics; Data retention; Trapping; Thin-film transistor; Charge (physics); Transistor; Dielectric; Amorphous solid; Retention time; Silicon; Layer (electronics); Electrical engineering; Nanotechnology; Physics; Chemistry; Voltage; Engineering","score_opus":0.009649205972055921,"score_gpt":0.24549087912373607,"score_spread":0.23584167315168014,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2626962294","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9981476,0.0008480236,0.0004844815,0.000030110254,0.000024171297,0.000004835615,0.00008761477,0.000038664246,0.0003344933],"genre_scores_gemma":[0.99939096,0.00013612365,0.00011890172,0.000017726978,0.00000582858,0.0000039142615,0.00005407204,0.000007258837,0.00026523034],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.999762,0.000017082943,0.0000232699,0.00006328962,0.000056626403,0.00007772717],"domain_scores_gemma":[0.999131,0.0003710441,0.00012277476,0.000087726774,0.00019817139,0.000089247915],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000296744,0.00027259503,0.00028489906,0.00025435106,0.0002175575,0.00040194092,0.00036690893,0.0005130429,0.001533295],"category_scores_gemma":[0.0012004261,0.00012747284,0.00017525944,0.00021629808,0.000198336,0.00080495916,0.00016533118,0.00032065544,0.00022024068],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00075934484,0.00007857316,0.0021379218,0.00010312352,0.000040893658,0.00041824733,0.00016368386,0.0010313188,0.98105913,0.0000712561,0.00011645931,0.014019917],"study_design_scores_gemma":[0.000012501455,0.0009349167,0.0055395947,0.0000121659195,0.00006150798,0.00023026051,0.00010638404,0.002509931,0.9901854,0.000023273013,0.0003728629,0.000011248375],"about_ca_topic_score_codex":0.00065911975,"about_ca_topic_score_gemma":0.00096446445,"teacher_disagreement_score":0.001533295,"about_ca_system_score_codex":0.00023678038,"about_ca_system_score_gemma":0.00015571233,"threshold_uncertainty_score":0.005129397},"labels":[],"label_agreement":null},{"id":"W2726967397","doi":"10.1016/j.sna.2017.06.005","title":"Infrared photo-resistors based on recrystallized amorphous germanium films on flexible substrates","year":2017,"lang":"en","type":"article","venue":"Sensors and Actuators A Physical","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":7,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Simon Fraser University","funders":"Natural Sciences and Engineering Research Council of Canada; Consiglio Nazionale delle Ricerche; Simon Fraser University; CMC Microsystems","keywords":"Materials science; Germanium; Optoelectronics; Amorphous solid; Surface roughness; Annealing (glass); Thin film; Silicon nitride; Silicon; Nanotechnology; Composite material","score_opus":0.012749031269906359,"score_gpt":0.22828330508594658,"score_spread":0.2155342738160402,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2726967397","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99311936,0.0008676496,0.0027055908,0.00011023135,0.00010626504,0.00002132238,0.00015666928,0.00027122532,0.0026415614],"genre_scores_gemma":[0.9953662,0.00027260772,0.0018671596,0.000021899723,0.000009242899,0.000009268974,0.00005710316,0.00003377016,0.0023626871],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.999879,0.0000090378,0.000007097986,0.00003787703,0.000039203493,0.00002765282],"domain_scores_gemma":[0.99986136,0.0000317348,0.000036127953,0.00004096306,0.00001630447,0.000013470901],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00009777244,0.00022881235,0.0002783121,0.00019326899,0.00011493119,0.00034986026,0.00068241084,0.00026593372,0.0013991332],"category_scores_gemma":[0.00028066043,0.00020680683,0.00013526181,0.00017588875,0.00020859907,0.00039580077,0.00016980828,0.00040004856,0.00036235753],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000046197,0.000009374015,0.00007718214,0.000051326846,0.0000057465936,0.000120680284,0.000032953634,0.00015060052,0.9977118,0.00020402989,0.00014994017,0.0014402227],"study_design_scores_gemma":[0.000018334298,0.00009524185,0.0011592193,0.000008929673,0.000012400958,0.000079799465,0.000032266442,0.0013451148,0.99574274,0.00003761444,0.0014615887,0.000006842636],"about_ca_topic_score_codex":0.0004380358,"about_ca_topic_score_gemma":0.0012446956,"teacher_disagreement_score":0.0013991332,"about_ca_system_score_codex":0.000211765,"about_ca_system_score_gemma":0.00007876882,"threshold_uncertainty_score":0.004680574},"labels":[],"label_agreement":null},{"id":"W2731059775","doi":"10.1063/1.4991340","title":"Infrared optical absorption from hybrid 3-D a-Si:H/ZnO nanowire structures","year":2017,"lang":"en","type":"article","venue":"Journal of Applied Physics","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":2,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Materials science; Nanowire; Amorphous solid; Infrared; Absorption (acoustics); Thin film; Amorphous silicon; Silicon; Shell (structure); Optoelectronics; Zinc; Layer (electronics); Optics; Nanotechnology; Crystallography; Crystalline silicon; Composite material; Chemistry","score_opus":0.01130382977194364,"score_gpt":0.21203761790390455,"score_spread":0.2007337881319609,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2731059775","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99663204,0.00015616602,0.0019243018,0.000016257236,0.000011239482,0.000004681874,0.0001724096,0.000045080506,0.0010377772],"genre_scores_gemma":[0.9966497,0.00014020498,0.0025569666,0.0000108719005,0.0000026113548,0.000008766071,0.00012647272,0.0000139098165,0.0004905119],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99995756,0.0000016486399,0.0000021225842,0.000014827051,0.0000133875255,0.000010406596],"domain_scores_gemma":[0.9999418,0.000013877962,0.000015380063,0.000005280326,0.00001184652,0.000011782791],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000054512857,0.00019714836,0.00016170886,0.00011910101,0.00009780023,0.00023373165,0.00028235232,0.0002125367,0.00063333753],"category_scores_gemma":[0.00006740455,0.00019231146,0.0001745838,0.00013963714,0.00012694603,0.00015828975,0.00012690622,0.00027646217,0.00013099058],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0000307164,0.000006252628,0.00010641594,0.000015387266,0.0000042071542,0.00002090474,0.000009645208,0.0001774141,0.9992574,0.000045778263,0.000020069714,0.00030580765],"study_design_scores_gemma":[0.000020799454,0.00009411584,0.0027231711,0.0000037593593,0.000013649112,0.000050312818,0.000028623015,0.004006026,0.9926065,0.00007590853,0.00037171104,0.0000054089055],"about_ca_topic_score_codex":0.0012595052,"about_ca_topic_score_gemma":0.0024968404,"teacher_disagreement_score":0.0012595052,"about_ca_system_score_codex":0.00033349774,"about_ca_system_score_gemma":0.000091392234,"threshold_uncertainty_score":0.0025043488},"labels":[],"label_agreement":null},{"id":"W2734991626","doi":"","title":"Interface properties of amorphous-crystalline silicon heterojunctions prepared using DC saddle-field PECVD","year":2011,"lang":"en","type":"article","venue":"HAL (Le Centre pour la Communication Scientifique Directe)","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Toronto","funders":"","keywords":"Plasma-enhanced chemical vapor deposition; Materials science; Heterojunction; Amorphous silicon; Interface (matter); Silicon; Saddle; Crystalline silicon; Amorphous solid; Optoelectronics; Composite material; Chemistry; Engineering; Mechanical engineering; Crystallography; Contact angle","score_opus":0.028230913318351394,"score_gpt":0.20114963427752725,"score_spread":0.17291872095917585,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2734991626","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99833953,0.00022949315,0.00023969641,0.00001805401,0.000023141674,0.000006444445,0.00034504055,0.00002222406,0.00077644084],"genre_scores_gemma":[0.99825615,0.0001501382,0.0002587509,0.000019015908,0.0000073541623,0.000009735392,0.0004314224,0.000010137745,0.0008572563],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998398,0.000008172084,0.000008761574,0.000043390042,0.00004998056,0.000049837723],"domain_scores_gemma":[0.9998455,0.00003845395,0.000024328237,0.000019090245,0.000053085638,0.000019558805],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00016001335,0.0002771235,0.0003145207,0.0003845257,0.0003488478,0.0005372339,0.0003776858,0.00047080845,0.002730824],"category_scores_gemma":[0.000299211,0.00015136691,0.00018723725,0.0004964562,0.00023268684,0.00032414155,0.00016406902,0.00032471624,0.00026963104],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0003855306,0.00005267011,0.0012565526,0.00007783262,0.000036154062,0.00020527648,0.00010041818,0.00041064166,0.9952212,0.0002430163,0.0002705482,0.0017400933],"study_design_scores_gemma":[0.000055717665,0.00047417585,0.025643542,0.000021610542,0.00006859137,0.00017152823,0.00031187024,0.0044463407,0.9674559,0.00011043592,0.0012239371,0.000016408638],"about_ca_topic_score_codex":0.0014140771,"about_ca_topic_score_gemma":0.0019830547,"teacher_disagreement_score":0.002730824,"about_ca_system_score_codex":0.00022902492,"about_ca_system_score_gemma":0.00017061945,"threshold_uncertainty_score":0.009135485},"labels":[],"label_agreement":null},{"id":"W2735818210","doi":"10.1557/proc-0989-a12-06","title":"Modeling and Characterization of the Hydrogenated Amorphous Silicon Metal Insulator Semiconductor Photosensors for Digital Radiography","year":2007,"lang":"en","type":"article","venue":"MRS Proceedings","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":4,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Materials science; Amorphous silicon; Photodetector; Characterization (materials science); Optoelectronics; Backplane; Semiconductor; Silicon; Active matrix; Digital radiography; Fabrication; Crystalline silicon; Thin-film transistor; Nanotechnology; Computer science; Radiography","score_opus":0.007845477956424726,"score_gpt":0.18108037153467763,"score_spread":0.1732348935782529,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2735818210","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.8014211,0.0011514269,0.17631604,0.00052425836,0.00005922617,0.000097177006,0.0005368193,0.0009115471,0.018982429],"genre_scores_gemma":[0.989961,0.00026087096,0.0064299987,0.000022259286,0.000006424763,0.000016567083,0.000075053555,0.00003284634,0.003194906],"study_design_codex":"simulation_or_modeling","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999031,0.000014038062,0.0000025888157,0.000015630689,0.000052096977,0.000012585174],"domain_scores_gemma":[0.9998745,0.000048674152,0.00002182322,0.000017772463,0.000030307527,0.000007007116],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00014323201,0.0002501815,0.00029055175,0.00013200422,0.00016075767,0.00044084634,0.00068853155,0.00041464978,0.0011895756],"category_scores_gemma":[0.00032273357,0.0002098995,0.00030101786,0.00017665517,0.0002041389,0.00043246636,0.00013070348,0.00021007047,0.0002457066],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00014867952,0.0001093504,0.003238775,0.00018675465,0.000095051684,0.0003326567,0.00014701941,0.6654157,0.3085642,0.0061595193,0.0011938541,0.014408516],"study_design_scores_gemma":[0.000007991486,0.000078278295,0.0010839391,0.0000042464567,0.000018929606,0.00005446595,0.000023064908,0.9603976,0.03687753,0.0004053161,0.0010426174,0.0000060545485],"about_ca_topic_score_codex":0.0046300082,"about_ca_topic_score_gemma":0.0050401795,"teacher_disagreement_score":0.0046300082,"about_ca_system_score_codex":0.0007407519,"about_ca_system_score_gemma":0.00060575374,"threshold_uncertainty_score":0.009206116},"labels":[],"label_agreement":null},{"id":"W2735897854","doi":"10.1016/j.tsf.2017.07.045","title":"Recycling indium tin oxide (ITO) anodes for use in organic light-emitting diodes (OLEDs)","year":2017,"lang":"en","type":"article","venue":"Thin Solid Films","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":18,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Université de Montréal","funders":"Université de Montréal; Natural Sciences and Engineering Research Council of Canada; Canada Research Chairs; Canada Foundation for Innovation","keywords":"OLED; Indium tin oxide; Materials science; Optoelectronics; Electrode; X-ray photoelectron spectroscopy; Anode; Thin film; Indium; Nanotechnology; Layer (electronics); Chemical engineering; Chemistry","score_opus":0.027224556646255522,"score_gpt":0.2560363774123078,"score_spread":0.22881182076605225,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2735897854","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9434174,0.014590001,0.027012968,0.00037331667,0.0004084722,0.00008671247,0.00049837487,0.00069157843,0.012921223],"genre_scores_gemma":[0.96471715,0.0063615884,0.019126022,0.00009805858,0.000036430665,0.000027807599,0.0003594964,0.00010134454,0.009172059],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99989295,0.000007874822,0.0000085289275,0.00002206319,0.00004554189,0.000023016555],"domain_scores_gemma":[0.9999182,0.000016594613,0.000014872309,0.0000109854955,0.000031369826,0.000007954737],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0002003299,0.00034099666,0.00020586996,0.000390037,0.00029753716,0.00079488003,0.0005006073,0.00040052956,0.0008681436],"category_scores_gemma":[0.00036985273,0.0001926385,0.00023931991,0.00029249728,0.00012713684,0.00061622256,0.00019079242,0.00038453742,0.0005562264],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000048888865,0.000022546697,0.00020154363,0.00009974926,0.0000061530645,0.00010153869,0.000020803265,0.00007013459,0.9881948,0.00036588963,0.0001999058,0.0106680915],"study_design_scores_gemma":[0.0000020927953,0.000035449044,0.00027353517,0.000006236087,0.000010933688,0.0000625314,0.000010317529,0.00032226788,0.99740976,0.000031430114,0.001833097,0.0000023031796],"about_ca_topic_score_codex":0.00068000035,"about_ca_topic_score_gemma":0.0015377934,"teacher_disagreement_score":0.0008681436,"about_ca_system_score_codex":0.0003145765,"about_ca_system_score_gemma":0.00032665028,"threshold_uncertainty_score":0.0029042363},"labels":[],"label_agreement":null},{"id":"W2745871898","doi":"10.1149/ma2008-01/21/774","title":"Comparison of Stress Properties in SiOx, SiNx, and SiOxNy Thin Films Grown by Inductively Coupled Plasma CVD","year":2008,"lang":"en","type":"article","venue":"ECS Meeting Abstracts","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McMaster University","funders":"","keywords":"Inductively coupled plasma; Materials science; Plasma; Stress (linguistics); Optoelectronics; Thin film; Nanotechnology; Physics","score_opus":0.028296103484998766,"score_gpt":0.227318808400373,"score_spread":0.19902270491537422,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2745871898","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99838746,0.00029679318,0.00027387278,0.000026605523,0.000010504535,0.0000063088523,0.00017005342,0.0000127915,0.00081565726],"genre_scores_gemma":[0.99819595,0.00022365976,0.00028131047,0.000009490896,0.0000058740447,0.000009312671,0.00024759877,0.000009567051,0.0010172706],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.999944,0.000003390181,0.0000034202296,0.000010806419,0.000025518013,0.000012810673],"domain_scores_gemma":[0.99976295,0.00008183462,0.00003757769,0.000018584593,0.00007871775,0.00002044508],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00011380929,0.00017068925,0.00015233093,0.0001374107,0.00018858282,0.000271257,0.00013757394,0.00018452416,0.001416338],"category_scores_gemma":[0.00033478122,0.00012306322,0.00010726331,0.00015023067,0.00016663069,0.00020791162,0.00009184865,0.00016130583,0.00018821206],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00010081193,0.000006028956,0.00069604954,0.00003788207,0.00000718925,0.000051008086,0.00004170797,0.00012707546,0.9979741,0.0000407603,0.00005124124,0.00086629105],"study_design_scores_gemma":[0.000023610504,0.00047438208,0.026610237,0.000011488859,0.000023608029,0.00013156065,0.00012694596,0.0017410334,0.96992433,0.00004678185,0.000878286,0.000007687391],"about_ca_topic_score_codex":0.001090364,"about_ca_topic_score_gemma":0.0013749982,"teacher_disagreement_score":0.001416338,"about_ca_system_score_codex":0.00015791993,"about_ca_system_score_gemma":0.00011389191,"threshold_uncertainty_score":0.0047380924},"labels":[],"label_agreement":null},{"id":"W2751040313","doi":"10.1149/ma2009-02/28/2244","title":"Compact Modeling of Organic Thin Film Transistors","year":2009,"lang":"en","type":"article","venue":"ECS Meeting Abstracts","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McMaster University","funders":"","keywords":"Thin-film transistor; Materials science; Transistor; Optoelectronics; Organic semiconductor; Computer science; Engineering physics; Electrical engineering; Nanotechnology; Engineering","score_opus":0.014912311092629566,"score_gpt":0.2117671296528882,"score_spread":0.19685481856025863,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2751040313","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.19343252,0.0069221426,0.66139805,0.0016189044,0.0005123043,0.00025542034,0.005281836,0.0029617485,0.1276171],"genre_scores_gemma":[0.91073185,0.0036496222,0.03991539,0.00017364314,0.00015557493,0.00034807692,0.0015101369,0.00039438368,0.043121397],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9998801,0.0000138218165,0.0000034811878,0.0000130121625,0.000070718284,0.00001889458],"domain_scores_gemma":[0.99986124,0.00006061133,0.000014363978,0.000016713402,0.00003916199,0.000007828813],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00014408048,0.00063447695,0.0006688719,0.00035096033,0.0002878159,0.0007524987,0.0013722288,0.00090950524,0.0061676037],"category_scores_gemma":[0.00059403555,0.00029253884,0.0006989391,0.0005734083,0.00024045137,0.0011431702,0.0002425904,0.000388233,0.0012401751],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00008986548,0.000032560474,0.0003286218,0.00025679934,0.00007719057,0.00025470593,0.00006316739,0.9476168,0.021614522,0.01724335,0.0023172249,0.010105135],"study_design_scores_gemma":[0.000009073691,0.000022989205,0.00012447394,0.00001103777,0.000019360143,0.00003006085,0.000009517884,0.99103105,0.0036786322,0.001926463,0.0031321126,0.0000051579973],"about_ca_topic_score_codex":0.0051901885,"about_ca_topic_score_gemma":0.0051242127,"teacher_disagreement_score":0.0061676037,"about_ca_system_score_codex":0.00073929783,"about_ca_system_score_gemma":0.00046007187,"threshold_uncertainty_score":0.020632625},"labels":[],"label_agreement":null},{"id":"W2751060996","doi":"10.1117/12.2283936","title":"Amorphous silicon pixel driver circuits for mobile OLED displays","year":2017,"lang":"en","type":"article","venue":"","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"AMOLED; OLED; Active matrix; Thin-film transistor; Materials science; Electronic circuit; Optoelectronics; Amorphous silicon; Fabrication; Silicon; Transistor; Pixel; Computer science; Electrical engineering; Nanotechnology; Crystalline silicon; Engineering; Voltage; Artificial intelligence","score_opus":0.013992634223950112,"score_gpt":0.23121359132349018,"score_spread":0.21722095709954006,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2751060996","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.57371134,0.010199364,0.33314964,0.0016541756,0.0006324778,0.00038799274,0.0011919931,0.007092209,0.07198076],"genre_scores_gemma":[0.89566064,0.0029054568,0.07653392,0.00040703724,0.00019966398,0.000060442148,0.00034310017,0.00014192336,0.0237478],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999368,0.0000057324323,0.000003370971,0.000013618117,0.000031004227,0.00000954355],"domain_scores_gemma":[0.99993706,0.000015663243,0.000010837346,0.0000060718653,0.00002485145,0.000005527758],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00007303847,0.00021463771,0.000115955605,0.00016158308,0.00023045068,0.00041539993,0.0004223796,0.00029136977,0.0035312104],"category_scores_gemma":[0.00012392603,0.00013399425,0.00012511898,0.00014410121,0.00010419902,0.00043769603,0.0001594819,0.00025333551,0.0009518258],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00004978098,0.000024542078,0.00052942405,0.00012441265,0.000015876005,0.00018068317,0.00006174263,0.0005260452,0.9430678,0.004352001,0.003121954,0.04794573],"study_design_scores_gemma":[0.00003482116,0.0004777062,0.0027453469,0.000039019167,0.00005920094,0.001157412,0.00010578497,0.020024603,0.88508135,0.0016994352,0.08854848,0.00002679391],"about_ca_topic_score_codex":0.00035750636,"about_ca_topic_score_gemma":0.0011587319,"teacher_disagreement_score":0.0035312104,"about_ca_system_score_codex":0.0003065945,"about_ca_system_score_gemma":0.00023899064,"threshold_uncertainty_score":0.011813104},"labels":[],"label_agreement":null},{"id":"W2753127918","doi":"10.1063/1.4989522","title":"Combined selective emitter and filter for high performance incandescent lighting","year":2017,"lang":"en","type":"article","venue":"Applied Physics Letters","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":9,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"","funders":"Basic Energy Sciences; Fonds de recherche du Québec – Nature et technologies; Solid-State Solar Thermal Energy Conversion, Massachusetts Institute of Technology; Office of Science; U.S. Department of Energy","keywords":"Incandescent light bulb; Common emitter; Optics; Optoelectronics; Materials science; Optical filter; Color rendering index; Light-emitting diode; Protein filament; Infrared; Physics","score_opus":0.00886785604879907,"score_gpt":0.18815961359110214,"score_spread":0.1792917575423031,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2753127918","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.6773599,0.005824012,0.29419795,0.00039852655,0.00027612934,0.00012905827,0.000256362,0.001392854,0.020165227],"genre_scores_gemma":[0.9089382,0.0018750961,0.08320905,0.000116042705,0.000060366245,0.000071878305,0.0001111425,0.00012839,0.005489767],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99982303,0.000008159923,0.0000060835873,0.00003732233,0.00009197282,0.000033435936],"domain_scores_gemma":[0.9999,0.00002518661,0.000025851108,0.000015780659,0.000021333075,0.000011859826],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00015632989,0.0004245769,0.00044360672,0.00028143937,0.00021459414,0.0005086287,0.0007777769,0.0004905218,0.0014556284],"category_scores_gemma":[0.00017616518,0.0002479914,0.00028970366,0.00028580363,0.00024038673,0.00086432445,0.0003936223,0.0005000145,0.0008874303],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000047216803,0.000030490664,0.00024445172,0.00008917985,0.00001705026,0.00009828315,0.000030923038,0.00056740845,0.9879533,0.0023819765,0.00032867736,0.008210996],"study_design_scores_gemma":[0.000008398998,0.000115571995,0.0004503083,0.000013939799,0.000023956907,0.0002046478,0.000012694087,0.008491477,0.9839978,0.0003349905,0.006332917,0.000013353229],"about_ca_topic_score_codex":0.00039837713,"about_ca_topic_score_gemma":0.0012730635,"teacher_disagreement_score":0.0014556284,"about_ca_system_score_codex":0.0005402809,"about_ca_system_score_gemma":0.00025068483,"threshold_uncertainty_score":0.0048695803},"labels":[],"label_agreement":null},{"id":"W2760932618","doi":"10.1007/s10853-017-1576-6","title":"Annealing of silicon carbonitride nanostructured thin films: interdependency of hydrogen content, optical, and structural properties","year":2017,"lang":"en","type":"article","venue":"Journal of Materials Science","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":21,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McMaster University","funders":"Canadian Network for Research and Innovation in Machining Technology, Natural Sciences and Engineering Research Council of Canada","keywords":"Materials science; Elastic recoil detection; Rutherford backscattering spectrometry; Thin film; Annealing (glass); Analytical Chemistry (journal); X-ray photoelectron spectroscopy; Ellipsometry; Chemical vapor deposition; Silicon; Amorphous solid; Chemical engineering; Crystallography; Nanotechnology; Optoelectronics; Composite material; Chemistry","score_opus":0.02878148154798753,"score_gpt":0.23665083160307698,"score_spread":0.20786935005508944,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2760932618","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99855274,0.0003600507,0.00025296904,0.00003519794,0.000011893752,0.000006104061,0.0000820881,0.000014735352,0.00068425183],"genre_scores_gemma":[0.99896073,0.00013974027,0.00024582856,0.000010355108,0.0000039252054,0.000003951308,0.00010196167,0.000011014769,0.00052244036],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998821,0.000009400893,0.0000068859727,0.000030184503,0.000035255016,0.00003612591],"domain_scores_gemma":[0.99981993,0.00007260059,0.000029434283,0.000020144656,0.000045194825,0.000012749937],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00011863809,0.00017255345,0.0002518381,0.00015174062,0.00024165728,0.00031336272,0.0002324522,0.0003111787,0.0016189319],"category_scores_gemma":[0.0003924243,0.00025688345,0.00015175017,0.00017864039,0.0002214563,0.00022490177,0.00010528882,0.0003702101,0.00019348878],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00021058541,0.000014942207,0.00030915017,0.000039044502,0.000012760408,0.000043007687,0.000043725264,0.00017800505,0.99816483,0.00004939775,0.000055553155,0.0008791291],"study_design_scores_gemma":[0.000006748447,0.00012522076,0.002925365,0.0000037406548,0.000013795955,0.000022416869,0.0000390316,0.0013567855,0.99516934,0.00001588279,0.0003169365,0.0000047243216],"about_ca_topic_score_codex":0.0024216531,"about_ca_topic_score_gemma":0.004903032,"teacher_disagreement_score":0.0024216531,"about_ca_system_score_codex":0.00038376177,"about_ca_system_score_gemma":0.00021959294,"threshold_uncertainty_score":0.005415857},"labels":[],"label_agreement":null},{"id":"W2761781939","doi":"10.1007/978-3-319-48933-9_44","title":"Disordered Semiconductors on Mechanically Flexible Substrates for Large-Area Electronics","year":2017,"lang":"en","type":"book-chapter","venue":"Springer handbooks","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of British Columbia","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Thin-film transistor; Materials science; Flexible electronics; Semiconductor; Electronics; Transistor; Optoelectronics; Amorphous solid; Thin film; Nanotechnology; Layer (electronics); Bending; Flexible display; Composite material; Electrical engineering; Engineering; Chemistry; Voltage","score_opus":0.027274097817231197,"score_gpt":0.22737296513886818,"score_spread":0.20009886732163698,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2761781939","genre_codex":"other","genre_gemma":"other","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"other","genre_consensus":"other","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.05215604,0.2551084,0.11783059,0.0024587417,0.010764013,0.00013901784,0.0012367134,0.0019338975,0.55837274],"genre_scores_gemma":[0.17720765,0.14943543,0.0748044,0.0008420054,0.0018436606,0.00018784402,0.0020255777,0.0011343514,0.592519],"study_design_codex":"design_other","study_design_gemma":"not_applicable","domain_scores_codex":[0.99993265,0.000003866694,0.0000032405812,0.000011769792,0.000039775972,0.000008734247],"domain_scores_gemma":[0.9999621,0.000014676251,0.0000031087304,0.000007768391,0.000008203304,0.000004130848],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000063947395,0.00070786726,0.0005006357,0.00048418215,0.0003057425,0.0008906828,0.000670447,0.00046875633,0.016172003],"category_scores_gemma":[0.00011467732,0.00033152348,0.00019922815,0.00074070256,0.0002957619,0.0009665752,0.0006541475,0.001055192,0.0066976873],"study_design_candidate":"not_applicable","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000058145015,0.0000693335,0.00013840852,0.0022223326,0.000030083387,0.0004368021,0.00023242307,0.0026683433,0.37807643,0.13865407,0.08375212,0.39366162],"study_design_scores_gemma":[0.000014017885,0.000097613854,0.00045501906,0.00026842364,0.000022481137,0.0010174905,0.00011869791,0.0053802226,0.1023919,0.03884061,0.85135704,0.000036547397],"about_ca_topic_score_codex":0.00016170547,"about_ca_topic_score_gemma":0.00080374465,"teacher_disagreement_score":0.016172003,"about_ca_system_score_codex":0.00028322023,"about_ca_system_score_gemma":0.0001892641,"threshold_uncertainty_score":0.054100692},"labels":[],"label_agreement":null},{"id":"W2763080678","doi":"10.1109/led.2017.2759230","title":"Hybrid ZnO Core–a-Si:H Shell Infrared Photodetectors Integrated With Thin-Film Transistors","year":2017,"lang":"en","type":"article","venue":"IEEE Electron Device Letters","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":4,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Photodetector; Thin-film transistor; Infrared; Optoelectronics; Dark current; Amorphous silicon; Transistor; Materials science; Silicon; Physics; Optics; Nanotechnology; Crystalline silicon; Layer (electronics)","score_opus":0.01125988447936009,"score_gpt":0.2074923347702875,"score_spread":0.19623245029092742,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2763080678","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9815803,0.00039453508,0.015043599,0.000045396264,0.000042853484,0.00002548142,0.0003001035,0.00056403806,0.0020036553],"genre_scores_gemma":[0.98271704,0.00027859886,0.014345144,0.000025952831,0.0000096681115,0.000020964013,0.0001456574,0.000039526083,0.002417542],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999261,0.000002415107,0.000003148782,0.000025948808,0.000027150736,0.000015315112],"domain_scores_gemma":[0.9999387,0.000012265993,0.000013582709,0.000005815757,0.000016934902,0.0000126799305],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00006258337,0.0002601934,0.00025186714,0.00011512159,0.00012697873,0.00040014694,0.0005273912,0.00024161053,0.00073847675],"category_scores_gemma":[0.000105388666,0.00020842571,0.00024367156,0.00016861159,0.0001244993,0.00031349808,0.00018619292,0.00019822463,0.0002833142],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000029980587,0.000010298242,0.0001607727,0.000011634334,0.000005571822,0.000039316994,0.0000075703456,0.00013548699,0.9983291,0.000056379176,0.000047120495,0.0011667652],"study_design_scores_gemma":[0.000017743767,0.0000910076,0.0017598256,0.0000022141255,0.000016710987,0.00009264145,0.000015142785,0.005641865,0.99166155,0.00004363803,0.0006515409,0.000006227472],"about_ca_topic_score_codex":0.0016539571,"about_ca_topic_score_gemma":0.004298857,"teacher_disagreement_score":0.0016539571,"about_ca_system_score_codex":0.0003867071,"about_ca_system_score_gemma":0.0001418316,"threshold_uncertainty_score":0.0032886863},"labels":[],"label_agreement":null},{"id":"W2766496230","doi":"10.1016/j.sse.2017.10.023","title":"TiOx-based thin-film transistors prepared by femtosecond laser pre-annealing","year":2017,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":false,"route_ca_aff":false,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"","funders":"Institute for Information and Communications Technology Promotion; Information Technology Research Centre; Ministry of Trade, Industry and Energy; Ministry of Education and Human Resources Development; Korea Institute of Energy Technology Evaluation and Planning; Ministry of Education; Ministry of Science, ICT and Future Planning; National Research Foundation of Korea","keywords":"Materials science; Thin-film transistor; Femtosecond; Annealing (glass); Optoelectronics; Amorphous solid; Semiconductor; Laser; Thin film; Transistor; Nanotechnology; Optics; Layer (electronics); Composite material; Crystallography; Electrical engineering","score_opus":0.006940705987001145,"score_gpt":0.2320266925190488,"score_spread":0.22508598653204767,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2766496230","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9945957,0.0006755501,0.0019006779,0.00009473894,0.00007433336,0.00003270919,0.00026076788,0.00009348564,0.0022720916],"genre_scores_gemma":[0.9901931,0.00073158374,0.003939951,0.000032610147,0.000015921318,0.0000532959,0.0002838348,0.000041591127,0.00470798],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.999946,0.0000021124906,0.0000033614933,0.000015798641,0.00001831469,0.000014426151],"domain_scores_gemma":[0.99995387,0.000010856417,0.000010316764,0.000007639333,0.00001181399,0.0000054223133],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0000896124,0.00023932355,0.00024696972,0.00017583424,0.0002663006,0.00033975788,0.0003090211,0.0003179489,0.0020947084],"category_scores_gemma":[0.00019081462,0.00020158033,0.00013139263,0.00018317366,0.00018375111,0.00033525485,0.0001161527,0.00042073842,0.00032618723],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00001907185,0.0000034054883,0.000040612373,0.000033522163,0.0000024431179,0.000026599697,0.000016438265,0.00002534622,0.9993766,0.00008790135,0.000035883215,0.00033214904],"study_design_scores_gemma":[0.0000062828744,0.000044360553,0.0012420461,0.0000048789934,0.0000084383255,0.00004373583,0.000022358257,0.000357675,0.99739146,0.0000319095,0.0008436784,0.0000031066138],"about_ca_topic_score_codex":0.0012508526,"about_ca_topic_score_gemma":0.0033496816,"teacher_disagreement_score":0.0020947084,"about_ca_system_score_codex":0.00032157998,"about_ca_system_score_gemma":0.00025275457,"threshold_uncertainty_score":0.0070075393},"labels":[],"label_agreement":null},{"id":"W2782074853","doi":"10.1109/ted.2017.2782769","title":"Nanocrystalline Silicon Lateral MSM Photodetector for Infrared Sensing Applications","year":2018,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":11,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Photodetector; Silicon; Materials science; Optoelectronics; Infrared; Nanocrystalline material; Remote sensing; Optics; Nanotechnology; Physics; Geology","score_opus":0.009210032121405276,"score_gpt":0.22807411762432306,"score_spread":0.21886408550291778,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2782074853","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.7974755,0.005938781,0.16481425,0.0006834657,0.00024290319,0.00013595975,0.0014629476,0.002739994,0.026506266],"genre_scores_gemma":[0.93027246,0.0008922267,0.060313907,0.00022565004,0.000046695994,0.00006303704,0.00028190092,0.000034995304,0.0078691095],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998512,0.000009069513,0.0000068212235,0.00004741741,0.000069237845,0.000016266735],"domain_scores_gemma":[0.9998764,0.000027917567,0.00002841801,0.000015385274,0.000038422364,0.000013517406],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00012216165,0.00024348416,0.00026268675,0.00018399183,0.00019710438,0.00038416754,0.00075628294,0.00031737352,0.0018294295],"category_scores_gemma":[0.00016143662,0.0001283126,0.00020416769,0.00029343998,0.00013170498,0.00041087382,0.00039450376,0.0002261183,0.00072875776],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00006430284,0.000017836343,0.000606608,0.00006788127,0.000012383208,0.00006729286,0.000015747244,0.00020638837,0.9843109,0.00093499484,0.0006385975,0.013056936],"study_design_scores_gemma":[0.000011040681,0.00017507572,0.0017345966,0.000011424931,0.000031028856,0.00040620271,0.000024295025,0.014025279,0.97621244,0.00021316214,0.007142561,0.000012850602],"about_ca_topic_score_codex":0.00092651154,"about_ca_topic_score_gemma":0.0046159127,"teacher_disagreement_score":0.0018294295,"about_ca_system_score_codex":0.0005967478,"about_ca_system_score_gemma":0.00032804714,"threshold_uncertainty_score":0.006120026},"labels":[],"label_agreement":null},{"id":"W2782256843","doi":"10.1016/j.spmi.2017.12.054","title":"Performance evaluation of bottom gate ZnO based thin film transistors with different W/L ratios for UV sensing","year":2018,"lang":"en","type":"article","venue":"Superlattices and Microstructures","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":18,"is_retracted":false,"has_abstract":false,"route_ca_aff":false,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"","funders":"Medical Research Council; Malaviya National Institute of Technology, Jaipur; Medical Research Council Canada","keywords":"Materials science; Thin-film transistor; Optoelectronics; Fabrication; Threshold voltage; Detector; Transistor; Silicon; Sputter deposition; Leakage (economics); Photodetector; Sputtering; Thin film; Voltage; Optics; Nanotechnology; Electrical engineering; Layer (electronics)","score_opus":0.012906517818234403,"score_gpt":0.2231053235546216,"score_spread":0.2101988057363872,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2782256843","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.996234,0.0007592182,0.0018730509,0.000064298634,0.0000474874,0.000017560153,0.00025099257,0.00009499903,0.0006583987],"genre_scores_gemma":[0.99433964,0.0005606353,0.0035785453,0.000032981832,0.000014326485,0.000023806726,0.00015877048,0.000027954398,0.0012633364],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998273,0.000013907109,0.000011472714,0.00005108283,0.000058210047,0.000038095433],"domain_scores_gemma":[0.9997565,0.000077994424,0.00004594155,0.00001803046,0.00007101142,0.000030588704],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00017775396,0.00044845088,0.0003656996,0.0002024336,0.00022000246,0.00045817596,0.000535077,0.00047063344,0.0011958355],"category_scores_gemma":[0.00045054528,0.00024571174,0.00020349525,0.00025269866,0.00016073315,0.0003584978,0.00014530508,0.00022632883,0.0002660552],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00008060473,0.000009197298,0.00011445748,0.000023004508,0.000004836122,0.000023940784,0.000011634593,0.000067463996,0.999037,0.000014723782,0.00002880405,0.0005842692],"study_design_scores_gemma":[0.000008913637,0.00016077732,0.0010383088,0.0000028492414,0.00001681661,0.000023821984,0.000015505075,0.0017136959,0.99679285,0.000008869754,0.00021362842,0.0000039000183],"about_ca_topic_score_codex":0.0026566654,"about_ca_topic_score_gemma":0.005929062,"teacher_disagreement_score":0.0026566654,"about_ca_system_score_codex":0.0003892317,"about_ca_system_score_gemma":0.0002042746,"threshold_uncertainty_score":0.0052823424},"labels":[],"label_agreement":null},{"id":"W2784020090","doi":"10.1149/2.0151802jss","title":"Influence of Deposition Conditions on the Characteristics of Luminescent Silicon Carbonitride Thin Films","year":2018,"lang":"en","type":"article","venue":"ECS Journal of Solid State Science and Technology","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":21,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McMaster University","funders":"Fundo de Apoio ao Ensino, à Pesquisa e Extensão, Universidade Estadual de Campinas; Coordenação de Aperfeiçoamento de Pessoal de Nível Superior","keywords":"Materials science; Elastic recoil detection; Thin film; X-ray photoelectron spectroscopy; Analytical Chemistry (journal); Substrate (aquarium); Ellipsometry; Photoluminescence; Rutherford backscattering spectrometry; Fourier transform infrared spectroscopy; Silicon; Plasma-enhanced chemical vapor deposition; Amorphous solid; Crystallography; Optoelectronics; Optics; Nuclear magnetic resonance; Nanotechnology; Chemistry","score_opus":0.006837134643677718,"score_gpt":0.2283650420742607,"score_spread":0.22152790743058298,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2784020090","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9973385,0.0007850788,0.0007682401,0.000027745578,0.000010274335,0.000015275798,0.0002340465,0.000034857614,0.00078606914],"genre_scores_gemma":[0.99589926,0.000811882,0.002146132,0.000021526575,0.0000080536565,0.000038866005,0.000336784,0.000043529933,0.00069390493],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998259,0.00001634052,0.000015182717,0.000048387432,0.00006366337,0.00003067397],"domain_scores_gemma":[0.99963164,0.00018391384,0.000056674442,0.000024454703,0.00007993666,0.000023340137],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00022584316,0.00033298944,0.0002904177,0.00024673907,0.00021828349,0.00038369905,0.0002496504,0.00028371345,0.0008588728],"category_scores_gemma":[0.00049342244,0.00025048797,0.00011999749,0.00024424563,0.00016486285,0.00020564828,0.00012826943,0.00029172085,0.00015706965],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00004133714,0.0000059057666,0.00023296304,0.000048826492,0.0000044775916,0.000056180943,0.000019121586,0.00008523779,0.9989287,0.000018427514,0.000016061225,0.0005426105],"study_design_scores_gemma":[0.0000053337417,0.0000580069,0.0029384359,0.0000042018896,0.0000074358945,0.000069239635,0.000019168565,0.00055773096,0.99603975,0.0000078393605,0.00028963343,0.0000031379172],"about_ca_topic_score_codex":0.0011954552,"about_ca_topic_score_gemma":0.0018291249,"teacher_disagreement_score":0.0011954552,"about_ca_system_score_codex":0.00030046908,"about_ca_system_score_gemma":0.00018149562,"threshold_uncertainty_score":0.002873242},"labels":[],"label_agreement":null},{"id":"W2786287404","doi":"10.1149/ma2006-01/23/825","title":"Er-doped Silicon-rich Silicon Oxide (SRSO) Thin FilmsDeposited by ECR-PECVD at High Temperatures","year":2006,"lang":"en","type":"article","venue":"ECS Meeting Abstracts","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McMaster University","funders":"","keywords":"Plasma-enhanced chemical vapor deposition; Silicon; Materials science; Doping; Optoelectronics; Silicon oxide; Oxide; Metallurgy","score_opus":0.0057590860934280865,"score_gpt":0.19152746040300042,"score_spread":0.18576837430957233,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2786287404","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99524516,0.00043929563,0.0013117166,0.00004128456,0.000044904235,0.000013892029,0.00021655795,0.00003434456,0.002652906],"genre_scores_gemma":[0.9914533,0.000702765,0.002773975,0.000026989983,0.000016095688,0.00001241007,0.0004665829,0.000043580752,0.0045043943],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999201,0.000003010376,0.0000036200868,0.00001807961,0.000036645954,0.000018578157],"domain_scores_gemma":[0.9999219,0.000024463088,0.000017401091,0.000011100508,0.000016809241,0.000008306716],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00010790017,0.0002227591,0.00023185833,0.00010232522,0.00014783353,0.00024391516,0.00020681629,0.00020955574,0.0017550555],"category_scores_gemma":[0.00018599667,0.00016693682,0.00011611981,0.00012094452,0.0001665978,0.00022865554,0.000116338255,0.00032780392,0.0004103125],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00002489707,0.0000035665055,0.000058952355,0.000025849457,0.000003060589,0.00005477003,0.000013968148,0.00005955343,0.9993118,0.000060893468,0.00004487289,0.0003377199],"study_design_scores_gemma":[0.0000070255014,0.00004883529,0.00082023605,0.000003713962,0.000007324955,0.000056867855,0.000021892127,0.0004468271,0.9975074,0.000020198422,0.0010576225,0.0000020401005],"about_ca_topic_score_codex":0.0007798203,"about_ca_topic_score_gemma":0.0025462057,"teacher_disagreement_score":0.0017550555,"about_ca_system_score_codex":0.00012822234,"about_ca_system_score_gemma":0.00016575833,"threshold_uncertainty_score":0.0058712363},"labels":[],"label_agreement":null},{"id":"W2786660273","doi":"10.1063/1.5000362","title":"Effect of dual-dielectric hydrogen-diffusion barrier layers on the performance of low-temperature processed transparent InGaZnO thin-film transistors","year":2018,"lang":"en","type":"article","venue":"Applied Physics Letters","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":15,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Canadian Network for Research and Innovation in Machining Technology, Natural Sciences and Engineering Research Council of Canada","keywords":"Materials science; Plasma-enhanced chemical vapor deposition; Thin-film transistor; Passivation; Gate dielectric; Optoelectronics; Dielectric; Thin film; Chemical vapor deposition; Layer (electronics); Nanotechnology; Transistor; Electrical engineering","score_opus":0.0050635210679463825,"score_gpt":0.18458157581987472,"score_spread":0.17951805475192834,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2786660273","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9991191,0.0003424393,0.00022476252,0.000017635883,0.000015099076,0.0000039018464,0.00005748367,0.000025195375,0.00019438169],"genre_scores_gemma":[0.99879104,0.0002980585,0.000513756,0.000015513504,0.000008214172,0.0000055955293,0.00007006412,0.00001684293,0.0002810281],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998784,0.000011407403,0.000011837243,0.000029674598,0.000032301206,0.000036441565],"domain_scores_gemma":[0.9996414,0.00013437167,0.00008051885,0.000027631726,0.00005504666,0.00006094621],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00013811376,0.00042961986,0.0003003737,0.00015695751,0.00014939059,0.0004201176,0.00032356323,0.00030567197,0.00081163703],"category_scores_gemma":[0.00046226085,0.00027357868,0.00013946801,0.00015371475,0.00015470259,0.00030201365,0.00015670613,0.00030020453,0.00019080589],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00033845677,0.000027289409,0.00030867517,0.000045173896,0.000016537742,0.0000735422,0.000023736124,0.00020767927,0.9982406,0.000019032592,0.000019014376,0.00068032544],"study_design_scores_gemma":[0.00002313523,0.00023330994,0.0016339624,0.000004271628,0.000030661155,0.00003902471,0.000015337226,0.0010457771,0.99682486,0.0000056066865,0.00013998536,0.000004140543],"about_ca_topic_score_codex":0.0008078969,"about_ca_topic_score_gemma":0.0012400381,"teacher_disagreement_score":0.00081163703,"about_ca_system_score_codex":0.00020803061,"about_ca_system_score_gemma":0.00017958465,"threshold_uncertainty_score":0.0027151704},"labels":[],"label_agreement":null},{"id":"W2793786906","doi":"10.1088/1742-6596/944/1/012008","title":"Supersonic plasma outflow in a plasmochemical method of amorphous silicon thin films formation","year":2018,"lang":"en","type":"article","venue":"Journal of Physics Conference Series","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":true,"ca_institutions":"","funders":"Russian Foundation for Basic Research","keywords":"Supersonic speed; Materials science; Amorphous silicon; Silicon; Nozzle; Plasmatron; Amorphous solid; Thin film; Jet (fluid); Deposition (geology); Plasma; Atomic physics; Nanotechnology; Mechanics; Chemistry; Optoelectronics; Crystalline silicon; Physics; Thermodynamics; Crystallography","score_opus":0.018209345480156566,"score_gpt":0.23590841064293658,"score_spread":0.21769906516278,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2793786906","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.7612386,0.00059627846,0.22282453,0.0001294636,0.00007229537,0.00006104124,0.000096490716,0.0003158571,0.014665378],"genre_scores_gemma":[0.9812308,0.00014284789,0.016771829,0.000012210255,0.0000054982734,0.000018914552,0.000034521185,0.000019460846,0.0017638712],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999398,0.000009244239,0.0000018739232,0.000009086749,0.00002965161,0.0000102544],"domain_scores_gemma":[0.9999548,0.000013419791,0.000009759019,0.000004271894,0.000012803263,0.000005007288],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00012369534,0.0001434176,0.00013397739,0.000107647866,0.00016943467,0.00030224895,0.00023789644,0.00023420749,0.0006177665],"category_scores_gemma":[0.00021040306,0.00013101105,0.00022618644,0.00006760081,0.00018098546,0.0001678911,0.00018067166,0.00017266012,0.00012310124],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00015635358,0.00007242618,0.0026172004,0.00021572535,0.000027370876,0.00043227297,0.00023253243,0.16568789,0.79530954,0.01755307,0.00047646713,0.017219115],"study_design_scores_gemma":[0.00004015893,0.00022683447,0.0015798453,0.000011502666,0.000016730088,0.00017119116,0.000039482406,0.8539889,0.13971798,0.0011984424,0.002992922,0.000016072421],"about_ca_topic_score_codex":0.0012939157,"about_ca_topic_score_gemma":0.00079654466,"teacher_disagreement_score":0.0012939157,"about_ca_system_score_codex":0.00033839437,"about_ca_system_score_gemma":0.0002835466,"threshold_uncertainty_score":0.0025727153},"labels":[],"label_agreement":null},{"id":"W2799489587","doi":"10.1039/c8ta02841a","title":"Atomic-layer-deposited AZO outperforms ITO in high-efficiency polymer solar cells","year":2018,"lang":"en","type":"article","venue":"Journal of Materials Chemistry A","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":47,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Kootenay Association for Science & Technology","funders":"King Abdullah University of Science and Technology","keywords":"Layer (electronics); Atomic layer deposition; Materials science; Electrode; Doping; Polymer; Zinc; Deposition (geology); Optoelectronics; Polymer solar cell; Aluminium; Aluminum oxide; Solar cell; Chemical engineering; Nanotechnology; Chemistry; Composite material; Metallurgy","score_opus":0.007084500463079644,"score_gpt":0.19755746852206685,"score_spread":0.1904729680589872,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2799489587","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99701643,0.0008752337,0.00037840032,0.000053150216,0.000027445494,0.0000045621546,0.000112457215,0.000050213413,0.0014821042],"genre_scores_gemma":[0.9977519,0.00056490453,0.0002918154,0.000011405744,0.000007529762,0.0000016268374,0.00006816798,0.0000073460187,0.0012952343],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99981374,0.000013759379,0.000013144312,0.000027768003,0.000080471385,0.000051258594],"domain_scores_gemma":[0.9998841,0.000038339687,0.000015685897,0.000010556442,0.000032200383,0.00001903971],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0001320557,0.00017276336,0.00024891432,0.00023875422,0.000189576,0.0005935789,0.00035072037,0.0003179938,0.0011342982],"category_scores_gemma":[0.00029199882,0.00012740881,0.00017345134,0.00033240457,0.0001261175,0.00037514273,0.00015056913,0.00032355124,0.0002765046],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00020323061,0.000047106594,0.0004169683,0.000050049486,0.000013341153,0.00004060021,0.000014555054,0.000491087,0.99509025,0.00010450646,0.00010788608,0.0034204933],"study_design_scores_gemma":[0.000010955257,0.00013498342,0.0012156069,0.0000023561738,0.000021115862,0.000019885612,0.000011490267,0.0015951468,0.996563,0.000021928103,0.00040095524,0.0000025997228],"about_ca_topic_score_codex":0.002151843,"about_ca_topic_score_gemma":0.0038852275,"teacher_disagreement_score":0.002151843,"about_ca_system_score_codex":0.00028555605,"about_ca_system_score_gemma":0.00019787755,"threshold_uncertainty_score":0.00427866},"labels":[],"label_agreement":null},{"id":"W2800453900","doi":"10.1557/proc-862-a19.6","title":"Dependence of Microcrystalline Silicon Growth on Ion Flux at the Substrate Surface in a Saddle Field PECVD","year":2005,"lang":"en","type":"article","venue":"MRS Proceedings","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":2,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Toronto","funders":"","keywords":"Materials science; Microcrystalline silicon; Substrate (aquarium); Plasma-enhanced chemical vapor deposition; Microcrystalline; Raman spectroscopy; Raman scattering; Optoelectronics; Thin film; Silicon; Amorphous silicon; Analytical Chemistry (journal); Optics; Nanotechnology; Crystalline silicon; Crystallography","score_opus":0.008949702171808625,"score_gpt":0.19772813415997612,"score_spread":0.1887784319881675,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2800453900","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9952868,0.00032410448,0.0010810004,0.00009350797,0.000017371462,0.000007676056,0.00017095238,0.00008468432,0.00293391],"genre_scores_gemma":[0.9986266,0.00013467854,0.00037058914,0.000013704654,0.0000073399533,0.0000044526582,0.00009847384,0.000016669253,0.0007274993],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998822,0.000011162454,0.000005422871,0.000031560383,0.00004168506,0.000028012755],"domain_scores_gemma":[0.99926645,0.00049011916,0.00006772144,0.000046851375,0.00008372528,0.000045011642],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00025477653,0.00024666754,0.00029723466,0.00023416708,0.00034225266,0.0005788708,0.00027717266,0.0003777533,0.0022747535],"category_scores_gemma":[0.000813572,0.00017801193,0.000095168754,0.00019663358,0.00034213555,0.0003435485,0.00017948552,0.00039121447,0.00034893127],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00091117725,0.000048733447,0.0014596052,0.000061545834,0.000010627164,0.00019913919,0.00013263748,0.0012195475,0.9926428,0.00036449626,0.0002840108,0.0026656564],"study_design_scores_gemma":[0.00003599604,0.0003207518,0.0069829077,0.000011166791,0.000010701703,0.00013040054,0.00006856673,0.010747319,0.98092467,0.00008911688,0.0006696115,0.0000086549235],"about_ca_topic_score_codex":0.001982931,"about_ca_topic_score_gemma":0.0024437134,"teacher_disagreement_score":0.0022747535,"about_ca_system_score_codex":0.0005168885,"about_ca_system_score_gemma":0.00017634315,"threshold_uncertainty_score":0.0076097846},"labels":[],"label_agreement":null},{"id":"W2800568666","doi":"10.1557/proc-862-a15.2","title":"Multiple-Trapping Model with Meyer-Neldel Effect and Field-Dependent Effects: Time-Of-Flight Simulations for a-Si:H","year":2005,"lang":"en","type":"article","venue":"MRS Proceedings","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":2,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Université de Montréal; Polytechnique Montréal","funders":"","keywords":"Trapping; Materials science; Exponential function; Monte Carlo method; Field (mathematics); Statistical physics; Transit time; Condensed matter physics; Thermodynamics; Physics; Statistics; Mathematics","score_opus":0.005738326138339808,"score_gpt":0.20407402375609202,"score_spread":0.19833569761775222,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2800568666","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.88555545,0.0013057869,0.04571014,0.0025695346,0.00038690327,0.00018824491,0.0017951884,0.0006286091,0.061860178],"genre_scores_gemma":[0.9790197,0.0003210764,0.009806562,0.00028566358,0.00006758208,0.00017965038,0.000490912,0.00019717247,0.009631636],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9998281,0.000035797068,0.000004156191,0.000021935128,0.00003714246,0.000072760464],"domain_scores_gemma":[0.9992717,0.00032053568,0.000060214807,0.000054677075,0.00013878499,0.00015413387],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00050423114,0.00073952647,0.0015886349,0.0008249922,0.0015985995,0.0013027666,0.0027660695,0.0037711367,0.007977361],"category_scores_gemma":[0.001295525,0.0007047118,0.0011447454,0.0011423794,0.0011128066,0.0017312758,0.0006422165,0.0013596275,0.0005730136],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0000937419,0.00011040903,0.0005384118,0.000073680116,0.000042422933,0.00023040379,0.0000672945,0.9828886,0.0014840146,0.011611657,0.0020614322,0.00079795363],"study_design_scores_gemma":[0.00004055675,0.0000168356,0.000110091074,0.0000043579876,0.0000076413535,0.000009715767,0.000019347002,0.9985934,0.00018670788,0.000784767,0.00021870351,0.000007888053],"about_ca_topic_score_codex":0.035642672,"about_ca_topic_score_gemma":0.02788113,"teacher_disagreement_score":0.035642672,"about_ca_system_score_codex":0.001917822,"about_ca_system_score_gemma":0.0019437501,"threshold_uncertainty_score":0.07087046},"labels":[],"label_agreement":null},{"id":"W2803325649","doi":"10.1149/ma2018-01/22/1388","title":"Effect of Hydrogen on Reliability with Various Deposition Temperatures of Al<sub>2</sub>O<sub>3</sub> Gate Insulator in In-Ga-Zn-O Thin Film Transistors","year":2018,"lang":"en","type":"article","venue":"ECS Meeting Abstracts","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Kootenay Association for Science & Technology","funders":"","keywords":"Materials science; Passivation; Backplane; Thin-film transistor; Hydrogen; Optoelectronics; Atomic layer deposition; Amorphous solid; Active layer; Threshold voltage; Active matrix; Nanotechnology; Transistor; Layer (electronics); Voltage; Electrical engineering; Chemistry; Crystallography","score_opus":0.0038068118908116196,"score_gpt":0.19336065703888294,"score_spread":0.18955384514807133,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2803325649","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9987386,0.0005870339,0.0002972497,0.000034891902,0.000016985166,0.000004789,0.00009953239,0.00002221264,0.00019867893],"genre_scores_gemma":[0.9992244,0.0002369956,0.00026061063,0.000014313356,0.0000064705378,0.000004457763,0.00004460866,0.000008811536,0.00019935555],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998154,0.000018316561,0.000016476708,0.000047793197,0.000056617708,0.00004545145],"domain_scores_gemma":[0.99938,0.0001875718,0.00019034802,0.00005953642,0.00013786549,0.000044652552],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00018183877,0.0002678023,0.00024778862,0.00014110707,0.0002100861,0.00022718325,0.000303701,0.00028774675,0.0006122266],"category_scores_gemma":[0.0006019317,0.00020411047,0.00017050334,0.00020687033,0.00020267347,0.0003744385,0.00014620596,0.00027714224,0.00009964295],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00037044345,0.000028883338,0.003108213,0.00010322266,0.000037363203,0.00021718646,0.00016731507,0.0006716593,0.992786,0.000033942197,0.00008159053,0.0023941193],"study_design_scores_gemma":[0.000007610165,0.0003761773,0.0085462965,0.000005008878,0.00003984378,0.00005809694,0.000083976614,0.0015043527,0.98905444,0.000012529357,0.00030290845,0.0000086785],"about_ca_topic_score_codex":0.00097042206,"about_ca_topic_score_gemma":0.002031275,"teacher_disagreement_score":0.00097042206,"about_ca_system_score_codex":0.0002772596,"about_ca_system_score_gemma":0.000103316575,"threshold_uncertainty_score":0.0020481348},"labels":[],"label_agreement":null},{"id":"W2810086026","doi":"10.1109/ted.2018.2847612","title":"Analysis of the Channel and Contact Regions in Staggered and Drain-Offset ZnO Thin-Film Transistors With Compact Modeling","year":2018,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":8,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Alberta","funders":"Science and Engineering Research Council; Alberta Innovates; CMC Microsystems","keywords":"Thin-film transistor; Materials science; Transistor; Optoelectronics; Offset (computer science); Electrode; Channel (broadcasting); Oxide thin-film transistor; Threshold voltage; Electrical engineering; Voltage; Layer (electronics); Nanotechnology; Computer science; Engineering; Chemistry","score_opus":0.011532535600820255,"score_gpt":0.21462102080347786,"score_spread":0.2030884852026576,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2810086026","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.8585671,0.0006165517,0.13691573,0.000052660424,0.000010887716,0.00004537483,0.00025965177,0.00033792903,0.0031941046],"genre_scores_gemma":[0.99155176,0.00018276616,0.0076739346,0.000005481764,0.000002288057,0.000021917293,0.000060011906,0.00001923175,0.00048259355],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99989474,0.000009895747,0.0000038392614,0.000031268763,0.00004378839,0.00001651716],"domain_scores_gemma":[0.9998467,0.00006789951,0.00003655419,0.000022165827,0.00002107678,0.0000055243386],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00013645831,0.00034196774,0.00030706375,0.00024738992,0.00015016022,0.0003196266,0.0006276213,0.0004069603,0.00036741106],"category_scores_gemma":[0.00046192898,0.00020241602,0.00040870297,0.00024587673,0.00031420004,0.0005872883,0.00014838402,0.0001772736,0.00008476068],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0001371385,0.00008096366,0.0032212571,0.00014631392,0.00005114258,0.0004400279,0.00018111209,0.5525847,0.42592037,0.0064066714,0.00018507721,0.0106452005],"study_design_scores_gemma":[0.0000052703635,0.000040284205,0.0010090506,0.0000029896094,0.000014802795,0.000048040612,0.000013814404,0.9737839,0.024384033,0.00045631555,0.00023700672,0.00000447499],"about_ca_topic_score_codex":0.0038790042,"about_ca_topic_score_gemma":0.0038938888,"teacher_disagreement_score":0.0038790042,"about_ca_system_score_codex":0.0008346794,"about_ca_system_score_gemma":0.0003183921,"threshold_uncertainty_score":0.007712841},"labels":[],"label_agreement":null},{"id":"W2884520095","doi":"10.1103/physrevb.98.195201","title":"Highly enriched <mml:math xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"><mml:mmultiscripts><mml:mi>Si</mml:mi><mml:mprescripts/><mml:none/><mml:mn>28</mml:mn></mml:mmultiscripts></mml:math> reveals remarkable optical linewidths and fine structure for well-known damage centers","year":2018,"lang":"lv","type":"article","venue":"Physical review. B./Physical review. B","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":53,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Simon Fraser University","funders":"British Columbia Knowledge Development Fund; Natural Sciences and Engineering Research Council of Canada; Canada Research Chairs; Canada Foundation for Innovation","keywords":"Luminescence; Silicon; Center (category theory); Absorption (acoustics); Materials science; Analytical Chemistry (journal); Physics; Chemistry; Optoelectronics; Crystallography; Optics","score_opus":0.016470408079939283,"score_gpt":0.2729302296285044,"score_spread":0.2564598215485651,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2884520095","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.4693958,0.0014919846,0.18914697,0.002001632,0.00049017527,0.00032774743,0.070183076,0.06841224,0.19855037],"genre_scores_gemma":[0.53313583,0.0015382272,0.1889168,0.0013564397,0.00008968469,0.0005231774,0.12413468,0.019504234,0.13080084],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99973327,0.00002945026,0.000020387854,0.00008077036,0.00009798777,0.00003820208],"domain_scores_gemma":[0.999744,0.0000851362,0.000027317818,0.00007953325,0.000044195334,0.000019833069],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00030592675,0.0007352596,0.00032144974,0.00050861586,0.0003620288,0.0008615875,0.0008960591,0.00058022304,0.04169898],"category_scores_gemma":[0.00047921587,0.00046378223,0.00038001983,0.0005994695,0.0002555526,0.00082281156,0.0005448301,0.0012040564,0.017979112],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000441687,0.0000935852,0.00068297994,0.00032493315,0.00002402218,0.0003466854,0.00011883026,0.000731237,0.9373555,0.004805525,0.019598996,0.035476014],"study_design_scores_gemma":[0.000032962096,0.00007333109,0.0023204032,0.000028222896,0.000022343784,0.0002793848,0.00004827979,0.0040742797,0.8519742,0.0010476542,0.14005665,0.00004219931],"about_ca_topic_score_codex":0.001558064,"about_ca_topic_score_gemma":0.0031945764,"teacher_disagreement_score":0.04169898,"about_ca_system_score_codex":0.00063552277,"about_ca_system_score_gemma":0.00036663585,"threshold_uncertainty_score":0.13949704},"labels":[],"label_agreement":null},{"id":"W2886263508","doi":"10.3791/56925","title":"A 3D-printed Chamber for Organic Optoelectronic Device Degradation Testing","year":2018,"lang":"en","type":"article","venue":"Journal of Visualized Experiments","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Queen's University; McMaster University","funders":"McMaster University","keywords":"Materials science; Humidity; Degradation (telecommunications); Relative humidity; Environmental chamber; Water vapor; Polylactic acid; Moisture; Optoelectronics; Composite material; Computer science; Polymer; Chemistry; Telecommunications; Meteorology","score_opus":0.04002747806864867,"score_gpt":0.3745975105823557,"score_spread":0.33457003251370704,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2886263508","genre_codex":"methods","genre_gemma":"methods","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"methods","genre_consensus":"methods","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.27546036,0.0032655608,0.69296294,0.0003472707,0.0012589067,0.0019247802,0.003993912,0.0063217585,0.01446454],"genre_scores_gemma":[0.3437551,0.001997421,0.6408499,0.0002619309,0.00015692668,0.0019027631,0.0017315598,0.000615722,0.00872869],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9990564,0.00007800658,0.00007375,0.00018371776,0.0005407931,0.000067394314],"domain_scores_gemma":[0.99892527,0.00037279184,0.00013061007,0.0003133436,0.00020152435,0.000056448684],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0007365352,0.0007260674,0.0005077619,0.00054731965,0.00050410524,0.00051320874,0.0011794952,0.0006711358,0.0035033305],"category_scores_gemma":[0.00094986166,0.00048695187,0.0005901592,0.00028233108,0.00030271584,0.0005485459,0.00056695245,0.00080219057,0.001556356],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000029529478,0.000046418656,0.00020494353,0.00014821495,0.000009430503,0.000113712216,0.0000412483,0.0006004933,0.98783034,0.0003532556,0.0005148507,0.010107488],"study_design_scores_gemma":[0.0000068564837,0.000167557,0.0007415992,0.000015337106,0.000014116327,0.0003112017,0.00000971512,0.0029049169,0.9839241,0.00008477523,0.0117939655,0.000025925177],"about_ca_topic_score_codex":0.00036377122,"about_ca_topic_score_gemma":0.0008525573,"teacher_disagreement_score":0.0035033305,"about_ca_system_score_codex":0.00035714134,"about_ca_system_score_gemma":0.00039629158,"threshold_uncertainty_score":0.011719763},"labels":[],"label_agreement":null},{"id":"W2888097411","doi":"10.1063/1.5045516","title":"Investigation for the structural stress of SiO2 thin films and its distribution on the large-wafer created by plasma enhanced chemical vapor deposition","year":2018,"lang":"en","type":"article","venue":"AIP Advances","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":7,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Ottawa","funders":"Changchun University of Science and Technology; Department of Science and Technology of Jilin Province","keywords":"Materials science; Residual stress; Plasma-enhanced chemical vapor deposition; Wafer; Stress (linguistics); Chemical vapor deposition; Substrate (aquarium); Composite material; Thin film; Silicon; Compressive strength; Ultimate tensile strength; Deposition (geology); Nanotechnology; Metallurgy","score_opus":0.008671486322625455,"score_gpt":0.21571967146298876,"score_spread":0.2070481851403633,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2888097411","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9976804,0.000055274388,0.001223608,0.000023788256,0.0000043214054,0.0000032322525,0.000041643554,0.000018215986,0.0009495078],"genre_scores_gemma":[0.9990583,0.000049267343,0.0005337253,0.000002737243,0.0000017379472,0.0000029507594,0.00003205679,0.0000034826317,0.00031566015],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99997103,0.0000018277293,6.581213e-7,0.0000058014202,0.0000135680775,0.000007092285],"domain_scores_gemma":[0.9999558,0.000013267532,0.000011970258,0.0000038125313,0.000009771507,0.000005467599],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00004323963,0.00016097717,0.00007536419,0.00008620255,0.00013201026,0.00014326807,0.00013964952,0.00012818922,0.0008182813],"category_scores_gemma":[0.00009110866,0.00010442422,0.00012148059,0.000091649345,0.00014659083,0.00010703801,0.000059139024,0.0001302254,0.000055653105],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00003514033,0.000024888202,0.0020268846,0.000047494286,0.000014453698,0.00014511714,0.00004735914,0.010016784,0.9856272,0.0004276543,0.00007768553,0.0015092876],"study_design_scores_gemma":[0.000036976264,0.00031015553,0.044916198,0.000009723621,0.00003303281,0.00021154624,0.00012626655,0.2466309,0.7063001,0.0002400491,0.0011672402,0.000017867531],"about_ca_topic_score_codex":0.0016234113,"about_ca_topic_score_gemma":0.0020770016,"teacher_disagreement_score":0.0016234113,"about_ca_system_score_codex":0.00024794697,"about_ca_system_score_gemma":0.0001529412,"threshold_uncertainty_score":0.0032278895},"labels":[],"label_agreement":null},{"id":"W2896074795","doi":"10.1557/proc-862-a22.4","title":"Active Pixel TFT Arrays for Digital Fluoroscopy in a-Si:H Technology","year":2005,"lang":"en","type":"article","venue":"MRS Proceedings","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":2,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Sunnybrook Health Science Centre; University of Waterloo","funders":"","keywords":"Thin-film transistor; Materials science; Backplane; Amorphous silicon; Optoelectronics; SIGNAL (programming language); Active matrix; Pixel; Fluoroscopy; Threshold voltage; Silicon; Transistor; Voltage; Computer hardware; Electrical engineering; Nanotechnology; Computer science; Crystalline silicon; Artificial intelligence; Engineering","score_opus":0.006775455563104734,"score_gpt":0.20761274860569162,"score_spread":0.20083729304258688,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2896074795","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.6394345,0.009871872,0.31133226,0.0024346008,0.0008726922,0.00020229626,0.0012140659,0.0036552865,0.030982347],"genre_scores_gemma":[0.86173457,0.0011696704,0.124816425,0.0002826243,0.00013494733,0.00005901752,0.00021264197,0.00016586082,0.011424163],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998889,0.000012553636,0.0000051523953,0.000035260837,0.000043765296,0.000014444849],"domain_scores_gemma":[0.9997211,0.00012435154,0.00003733526,0.00003011892,0.0000643485,0.00002273404],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00025979997,0.00023116567,0.00023667834,0.00022157286,0.0003648063,0.00070715154,0.0006068219,0.0006724409,0.003159112],"category_scores_gemma":[0.0005619424,0.00027017633,0.00013492585,0.00023795225,0.00026469651,0.0009178004,0.0002542257,0.0004314651,0.0007856312],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00016302285,0.00001526124,0.00032172407,0.00010824735,0.000010433915,0.000097844175,0.00007228378,0.00026338157,0.9843411,0.0013896929,0.0014603034,0.011756686],"study_design_scores_gemma":[0.000030121872,0.00022884466,0.0014370403,0.000017917217,0.000025157875,0.00045896717,0.00005561429,0.005820307,0.9816803,0.0005993949,0.009629829,0.000016607579],"about_ca_topic_score_codex":0.00077883893,"about_ca_topic_score_gemma":0.0023110537,"teacher_disagreement_score":0.003159112,"about_ca_system_score_codex":0.0004931556,"about_ca_system_score_gemma":0.00029711594,"threshold_uncertainty_score":0.010568261},"labels":[],"label_agreement":null},{"id":"W2899012341","doi":"10.1088/2058-8585/aaed19","title":"Facile fabrication of an electrolyte-gated In <sub>2</sub> O <sub>3</sub> nanoparticle-based thin-film transistor uniting laser ablation and inkjet printing","year":2018,"lang":"en","type":"article","venue":"Flexible and Printed Electronics","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":6,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Advanced Micro Devices (Canada)","funders":"Centre of Excellence for Integrative Brain Function, Australian Research Council","keywords":"Fabrication; Materials science; Nanoparticle; Thin-film transistor; Optoelectronics; Laser ablation; Inkjet printing; Ablation; Electrolyte; Transistor; Nanotechnology; Laser; Thin film; Inkwell; Optics; Electrode; Electrical engineering; Engineering; Physics; Voltage; Layer (electronics)","score_opus":0.009252216058411268,"score_gpt":0.20797141252027954,"score_spread":0.19871919646186828,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2899012341","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.89936405,0.0012591098,0.09370211,0.00023928752,0.00025855986,0.00009634909,0.00041492417,0.00090108055,0.003764421],"genre_scores_gemma":[0.9304076,0.00077057385,0.06535234,0.00007239251,0.000017045906,0.00003916995,0.00013982235,0.00007454618,0.0031264753],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99993324,0.000004704981,0.000007538175,0.000015870655,0.000028189104,0.0000105780355],"domain_scores_gemma":[0.99991906,0.000023874056,0.000020509087,0.000009881031,0.000016419213,0.0000101862715],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00009500228,0.00022428503,0.00022086459,0.00013463257,0.00011101282,0.0003699238,0.00036512676,0.0002995678,0.0005686488],"category_scores_gemma":[0.00017801889,0.00017669576,0.00026015245,0.000109930435,0.00016968479,0.0002390631,0.00013849977,0.000279117,0.0003024291],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0000053781387,0.0000026668697,0.000030819756,0.00001585843,0.0000019147944,0.000028860346,0.0000075774583,0.00006229758,0.9990307,0.00004376879,0.000021271033,0.0007489043],"study_design_scores_gemma":[0.0000019162703,0.000014771197,0.00017032775,0.0000010285061,0.0000046029913,0.000058361744,0.000004279781,0.0006527008,0.9983972,0.000015706546,0.0006759713,0.000003101161],"about_ca_topic_score_codex":0.00048232553,"about_ca_topic_score_gemma":0.0010533445,"teacher_disagreement_score":0.0005686488,"about_ca_system_score_codex":0.00020897153,"about_ca_system_score_gemma":0.0001934539,"threshold_uncertainty_score":0.0019023418},"labels":[],"label_agreement":null},{"id":"W2902154206","doi":"10.1007/s10854-018-0434-x","title":"Empirical expressions for the spectral dependence of the refractive index for the case of thin-film silicon and some of its common alloys","year":2018,"lang":"en","type":"article","venue":"Journal of Materials Science Materials in Electronics","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":4,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of British Columbia, Okanagan Campus; University of British Columbia","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Thin film; Silicon; Refractive index; Materials science; Semiconductor; Optoelectronics; Nanotechnology","score_opus":0.020537359429730444,"score_gpt":0.2936747386359607,"score_spread":0.27313737920623027,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2902154206","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.09075679,0.012312783,0.82062143,0.0010100107,0.00023584638,0.00013854886,0.00071971834,0.0005288478,0.07367607],"genre_scores_gemma":[0.753202,0.014506226,0.21042998,0.0003166076,0.00041753205,0.0003170152,0.0007236967,0.000626681,0.019460242],"study_design_codex":"theoretical_or_conceptual","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9996731,0.00008455592,0.00002694219,0.000045548335,0.00013329729,0.000036539728],"domain_scores_gemma":[0.996673,0.0022818344,0.00027015488,0.0002883209,0.000449761,0.00003698957],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0016306319,0.0010491742,0.0005190604,0.0017861521,0.00054681307,0.0011183651,0.0018746075,0.0010642016,0.004397732],"category_scores_gemma":[0.009069875,0.0004239589,0.0006596209,0.00097287283,0.0011753921,0.002568365,0.0006424491,0.0015157401,0.0011854046],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00006179857,0.000111488065,0.0016798073,0.0008748713,0.00004647789,0.0004965505,0.0007247372,0.11563009,0.017130991,0.8165609,0.003995634,0.042686727],"study_design_scores_gemma":[0.000018283738,0.000029539726,0.002158244,0.00035784885,0.000041980293,0.0013222982,0.00024358275,0.6722305,0.0063248747,0.3071998,0.009990736,0.0000822611],"about_ca_topic_score_codex":0.0007753777,"about_ca_topic_score_gemma":0.0024420028,"teacher_disagreement_score":0.004397732,"about_ca_system_score_codex":0.00069811125,"about_ca_system_score_gemma":0.0005823275,"threshold_uncertainty_score":0.014711857},"labels":[],"label_agreement":null},{"id":"W2903345699","doi":"10.1039/c8tc02634c","title":"Cross-linked poly(hydroxy imide) gate-insulating materials for low-temperature processing of organic thin-film transistors","year":2018,"lang":"en","type":"article","venue":"Journal of Materials Chemistry C","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":16,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"SAIT Polytechnic","funders":"","keywords":"Materials science; Imide; Thin-film transistor; Optoelectronics; Transistor; Thin film; Hysteresis; Gate voltage; Voltage; Composite material; Polymer chemistry; Electrical engineering; Nanotechnology; Layer (electronics); Condensed matter physics","score_opus":0.00809526342163336,"score_gpt":0.2326927813740286,"score_spread":0.22459751795239524,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2903345699","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9792935,0.00210827,0.015864916,0.00004557265,0.00004836876,0.000046322108,0.00012779191,0.00018109208,0.0022841468],"genre_scores_gemma":[0.9882669,0.001082113,0.009002743,0.000025491841,0.000021220441,0.000028787092,0.00013165854,0.00004247277,0.0013986352],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999541,0.000005560931,0.000003896406,0.000008513081,0.000016256841,0.000011624201],"domain_scores_gemma":[0.9999397,0.0000108555805,0.000023525396,0.0000056490844,0.000007702562,0.000012592923],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00007805556,0.00037556406,0.000112737376,0.00023028748,0.00010686148,0.00018208235,0.00016178304,0.00018031316,0.00059772603],"category_scores_gemma":[0.00009882849,0.00013089394,0.00013946841,0.00013659136,0.000113269576,0.00024246066,0.00012288462,0.00029331187,0.00019872689],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000011013292,0.0000065763065,0.00002717689,0.000023533887,0.0000014725396,0.000023143322,0.0000048608563,0.000056553687,0.998723,0.000040668147,0.000010135989,0.0010718957],"study_design_scores_gemma":[0.000002741597,0.00007798438,0.00045819354,0.0000026141747,0.000005800353,0.00006464307,0.0000043328355,0.0002788372,0.99845886,0.000011592638,0.0006323749,0.0000020050034],"about_ca_topic_score_codex":0.000093833456,"about_ca_topic_score_gemma":0.0002981892,"teacher_disagreement_score":0.00059772603,"about_ca_system_score_codex":0.000091888425,"about_ca_system_score_gemma":0.00008292417,"threshold_uncertainty_score":0.001999557},"labels":[],"label_agreement":null},{"id":"W2904331605","doi":"10.1109/jphotov.2018.2882650","title":"Chemical Stability and Performance of Doped Silicon Oxide Layers for Use in Thin-Film Silicon Solar Cells","year":2018,"lang":"en","type":"article","venue":"IEEE Journal of Photovoltaics","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":10,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Toronto","funders":"Foundation for Fundamental Research on Matter","keywords":"Materials science; Passivation; Silicon; Doping; Chemical vapor deposition; Degradation (telecommunications); Nanocrystalline silicon; Optoelectronics; Crystalline silicon; Crystallinity; Oxide; Layer (electronics); Thin film; Solar cell; Chemical engineering; Nanotechnology; Amorphous silicon; Composite material; Electronic engineering","score_opus":0.020379404344868887,"score_gpt":0.22264419631671623,"score_spread":0.20226479197184732,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2904331605","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.997405,0.0015304622,0.00048699716,0.00001712586,0.000019748775,0.0000072093453,0.00012803146,0.000010820672,0.00039447428],"genre_scores_gemma":[0.9981822,0.000567536,0.0005438007,0.000008701679,0.000008825056,0.00000596345,0.00014920034,0.000009624626,0.0005241139],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998116,0.000021107679,0.000018854786,0.000030276356,0.00008188083,0.000036381],"domain_scores_gemma":[0.9997192,0.00006785358,0.000053092648,0.000027037615,0.000103765145,0.000029084826],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00025856812,0.00025428316,0.00016861416,0.00024994143,0.00021304308,0.00039675407,0.00019169798,0.00041629738,0.0007563427],"category_scores_gemma":[0.00046880217,0.00014951044,0.0002215298,0.00019405896,0.00014665037,0.00026224583,0.0001521875,0.00025096128,0.00017216461],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00009431483,0.000012254283,0.0006997966,0.00003242765,0.000012515907,0.000030034667,0.000018257244,0.00021238918,0.9975171,0.000019016694,0.000016260134,0.0013356867],"study_design_scores_gemma":[0.0000040643804,0.0001702298,0.0025428627,0.000003659514,0.000014247363,0.000027916645,0.000017047243,0.000586309,0.9963833,0.0000064977608,0.00024072966,0.0000031602117],"about_ca_topic_score_codex":0.00082607067,"about_ca_topic_score_gemma":0.0009167726,"teacher_disagreement_score":0.00082607067,"about_ca_system_score_codex":0.00022015041,"about_ca_system_score_gemma":0.00014370026,"threshold_uncertainty_score":0.0025302768},"labels":[],"label_agreement":null},{"id":"W2907494382","doi":"10.5539/jmsr.v8n1p25","title":"Hydrogenated Nano-Crystalline Silicon Thin Films in SiO2 Matrix for Next Generation Solar Cells Using Glow Discharged Decomposition","year":2018,"lang":"en","type":"article","venue":"Journal of Materials Science Research","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":false,"route_ca_venue":true,"route_about_ca":false,"ca_institutions":"","funders":"Universiti Malaya; National Science Foundation","keywords":"Materials science; Nanocrystalline material; Substrate (aquarium); Raman spectroscopy; Analytical Chemistry (journal); Nanocrystalline silicon; Band gap; Absorption edge; Silicon; Thin film; Grain size; Crystalline silicon; Nanotechnology; Optics; Optoelectronics; Composite material; Amorphous silicon; Chemistry","score_opus":0.09114232483956754,"score_gpt":0.37448959850853053,"score_spread":0.283347273668963,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2907494382","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9974421,0.0006597271,0.0007889621,0.000034481884,0.000022869797,0.00001039395,0.0001162692,0.000032006184,0.00089323526],"genre_scores_gemma":[0.9952964,0.00063335086,0.0015882696,0.000021937336,0.000005301793,0.0000103883085,0.00016787754,0.00001280017,0.0022636943],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999585,0.0000023109112,0.000002269757,0.000010705067,0.000019374522,0.0000067249266],"domain_scores_gemma":[0.9999695,0.000004262121,0.0000074401783,0.0000030920917,0.000010411863,0.00000538348],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00006229298,0.00018043442,0.00013117668,0.00007037698,0.00008589254,0.00021274634,0.00020679126,0.00017387855,0.0006831038],"category_scores_gemma":[0.000049437585,0.00016333321,0.00015465243,0.00007608296,0.00007647962,0.00016858747,0.00011376926,0.00020859728,0.00016182053],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000011779255,0.000004449722,0.000076303855,0.00002047337,0.0000024926305,0.000025386647,0.00000564523,0.00004679755,0.9994253,0.000014160607,0.000015833031,0.00035134229],"study_design_scores_gemma":[0.0000041207873,0.000094726434,0.0011680922,0.0000024528,0.000007088274,0.000040771647,0.000018236433,0.00060649746,0.9973003,0.000007696135,0.0007481235,0.0000017880956],"about_ca_topic_score_codex":0.00061867124,"about_ca_topic_score_gemma":0.002878299,"teacher_disagreement_score":0.0006831038,"about_ca_system_score_codex":0.00014368574,"about_ca_system_score_gemma":0.00011489896,"threshold_uncertainty_score":0.0022851825},"labels":[],"label_agreement":null},{"id":"W2908404790","doi":"10.1109/ifetc.2018.8583886","title":"Operation and Control of Flexible Display Pixel Circuits Under Mechanical Bending","year":2018,"lang":"en","type":"article","venue":"","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":5,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Thin-film transistor; Materials science; Optoelectronics; Transistor; Flexible display; Diode; Light-emitting diode; Substrate (aquarium); Electronic circuit; Fabrication; Electrical engineering; Voltage; Nanotechnology; Engineering","score_opus":0.012399969811386528,"score_gpt":0.2192867441192414,"score_spread":0.20688677430785488,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2908404790","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9798752,0.0003165571,0.017529726,0.00009083119,0.000027984073,0.00002485345,0.000139613,0.00030303092,0.0016920932],"genre_scores_gemma":[0.9964192,0.00006208124,0.0029318687,0.000019495907,0.000006457838,0.000012145571,0.00002789189,0.000008571849,0.00051245757],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99989545,0.0000070217593,0.0000061637866,0.000033440814,0.00003820642,0.000019636413],"domain_scores_gemma":[0.99987805,0.000031391704,0.000038995946,0.000016037395,0.000023836268,0.000011738569],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00008870211,0.00015557802,0.00013475111,0.000123998,0.00017365522,0.0003132725,0.00047963107,0.00025283435,0.00096964015],"category_scores_gemma":[0.0002181029,0.0000870632,0.000088497734,0.00012742788,0.0001881889,0.000292591,0.00013580784,0.00013996307,0.0001419527],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000058868085,0.000013818863,0.00037638115,0.000030695468,0.0000056950976,0.00009864267,0.000041616167,0.0009976035,0.9905503,0.0002708198,0.0001054763,0.007450113],"study_design_scores_gemma":[0.000014499749,0.00018867708,0.0037075789,0.000004012137,0.000011448149,0.00016351345,0.000028666824,0.021040332,0.9733193,0.00012990719,0.0013807971,0.000011199196],"about_ca_topic_score_codex":0.00041895884,"about_ca_topic_score_gemma":0.0007087333,"teacher_disagreement_score":0.00096964015,"about_ca_system_score_codex":0.00029242702,"about_ca_system_score_gemma":0.000119801516,"threshold_uncertainty_score":0.003243804},"labels":[],"label_agreement":null},{"id":"W2921305690","doi":"10.1109/jeds.2019.2903541","title":"A 6-TFT Charge-Transfer Self-Compensating Pixel Circuit for Flexible Displays","year":2019,"lang":"en","type":"article","venue":"IEEE Journal of the Electron Devices Society","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":18,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"University of Waterloo","keywords":"Thin-film transistor; Materials science; Polyethylene naphthalate; Pixel; Optoelectronics; Transistor; Flexible display; Logic gate; Threshold voltage; Stress (linguistics); Electrical engineering; Electronic engineering; Voltage; Computer science; Engineering; Composite material; Artificial intelligence; Polyethylene terephthalate","score_opus":0.009162588941588239,"score_gpt":0.2092804400314155,"score_spread":0.20011785108982724,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2921305690","genre_codex":"empirical","genre_gemma":"methods","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"methods","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.57237905,0.0024871782,0.41419858,0.00056574104,0.0003652608,0.00016655454,0.00043484886,0.0033635895,0.0060392227],"genre_scores_gemma":[0.8998408,0.00036789008,0.09533555,0.0002712747,0.000117304044,0.000047789992,0.000171257,0.0000635701,0.0037846062],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99991,0.000007566442,0.0000053586145,0.000025986776,0.000035595058,0.00001545976],"domain_scores_gemma":[0.99986327,0.000025432455,0.00002824286,0.000022336933,0.00004639837,0.000014289652],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00012956298,0.00019976647,0.00019948171,0.00021915078,0.00022583906,0.00026417867,0.0010124433,0.00041583215,0.0024482592],"category_scores_gemma":[0.00019468501,0.00011671827,0.00020209147,0.00020682535,0.00012616826,0.0005252323,0.0001615974,0.00027687976,0.0004288026],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000095117764,0.000021957032,0.0005879202,0.0000947314,0.000023161321,0.00016334231,0.000029374976,0.00044105455,0.96207434,0.0008496285,0.0007498492,0.034869548],"study_design_scores_gemma":[0.000024100838,0.00051059126,0.0034580093,0.000012537619,0.00007118616,0.0016751976,0.000019407074,0.020791316,0.9625299,0.00023596028,0.010648926,0.00002299569],"about_ca_topic_score_codex":0.00030220716,"about_ca_topic_score_gemma":0.0005658096,"teacher_disagreement_score":0.0024482592,"about_ca_system_score_codex":0.00024436906,"about_ca_system_score_gemma":0.0001662365,"threshold_uncertainty_score":0.008190274},"labels":[],"label_agreement":null},{"id":"W2936561757","doi":"10.1088/1361-6528/ab1a5e","title":"Integration of GaN light-emitting diodes with a-Si:H thin-film transistors for flexible displays","year":2019,"lang":"en","type":"article","venue":"Nanotechnology","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":26,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Materials science; Thin-film transistor; Optoelectronics; Fabrication; Flexible display; Transistor; Electroluminescence; Light-emitting diode; Diode; Voltage; Nanotechnology; Electrical engineering; Layer (electronics)","score_opus":0.008076576411987646,"score_gpt":0.20402940186466825,"score_spread":0.1959528254526806,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2936561757","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9443625,0.003451507,0.044505436,0.00019747556,0.00022550845,0.00007521483,0.00032825687,0.00044492976,0.006409149],"genre_scores_gemma":[0.97149265,0.0010221709,0.025333341,0.000058168684,0.000034745604,0.00002437844,0.00008596126,0.000025145002,0.0019234131],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999299,0.000006995979,0.000005342668,0.000017096865,0.000026130887,0.000014524554],"domain_scores_gemma":[0.9999291,0.000020544649,0.000013985803,0.000010456578,0.000016688891,0.000009310913],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00011034097,0.00027089907,0.0001649141,0.000157133,0.00012594252,0.00036964563,0.00043450418,0.0002743903,0.00097625225],"category_scores_gemma":[0.0001545771,0.00015190711,0.00023214967,0.00014752444,0.00011607065,0.0003396314,0.00017753798,0.0002979292,0.00028952223],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0000177616,0.000012416611,0.00021314643,0.000035752288,0.000010656172,0.00010138092,0.000009352621,0.00019150194,0.9955289,0.00016117963,0.000069908056,0.0036480378],"study_design_scores_gemma":[0.000008547373,0.0001340489,0.0016490442,0.000006505364,0.000019043679,0.0002369083,0.000019016275,0.0044682226,0.9914547,0.000074820855,0.0019213635,0.000007748147],"about_ca_topic_score_codex":0.0005623692,"about_ca_topic_score_gemma":0.0011145741,"teacher_disagreement_score":0.00097625225,"about_ca_system_score_codex":0.0001946143,"about_ca_system_score_gemma":0.000115770876,"threshold_uncertainty_score":0.0032659173},"labels":[],"label_agreement":null},{"id":"W2944677654","doi":"10.1002/crat.201900014","title":"The Effect of Crucible Rotation and Crucible Size in Top‐Seeded Solution Growth of Single‐Crystal Silicon Carbide","year":2019,"lang":"en","type":"article","venue":"Crystal Research and Technology","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":8,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Victoria","funders":"Research Institute for Information Technology, Kyushu University; Kyoto University; Kyushu University","keywords":"Crucible (geodemography); Marangoni effect; Silicon carbide; Micro-pulling-down; Materials science; Impurity; Seeding; Growth rate; Silicon; Crystal growth; Crystal (programming language); Temperature gradient; Convection; Metallurgy; Crystallography; Chemistry; Mechanics; Thermodynamics","score_opus":0.012100543978094184,"score_gpt":0.25258439267563493,"score_spread":0.24048384869754075,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2944677654","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9956579,0.0004024868,0.0027190566,0.000033131713,0.000017266892,0.000007670318,0.000028820905,0.00006121236,0.0010724453],"genre_scores_gemma":[0.99898535,0.00008943502,0.0007994618,0.000002732213,0.0000015243559,0.0000029953223,0.000009536116,0.000006757367,0.000102160804],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99984145,0.000039594885,0.000008625555,0.000027466518,0.000047916117,0.000034998055],"domain_scores_gemma":[0.99917704,0.0005400355,0.00014226338,0.00003332472,0.000075440024,0.000031976873],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00031649813,0.00030414842,0.00025740787,0.0001958705,0.0002057738,0.00042281876,0.00025005752,0.0002463343,0.0005079623],"category_scores_gemma":[0.0014035987,0.00019134974,0.00024549724,0.00016854698,0.00028075703,0.0002625961,0.00015624092,0.00015731546,0.00007048881],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0017214826,0.00012852678,0.005189659,0.00038207896,0.00008340506,0.0005721922,0.00018809804,0.1570555,0.81561625,0.0029971267,0.00041912968,0.015646633],"study_design_scores_gemma":[0.00007626925,0.0010176961,0.004672415,0.00002929299,0.00010150006,0.00013286962,0.000116083866,0.3280538,0.6646021,0.00016365328,0.0009800749,0.00005417013],"about_ca_topic_score_codex":0.0028759514,"about_ca_topic_score_gemma":0.0024147744,"teacher_disagreement_score":0.0028759514,"about_ca_system_score_codex":0.00046278417,"about_ca_system_score_gemma":0.0003416857,"threshold_uncertainty_score":0.0057183504},"labels":[],"label_agreement":null},{"id":"W2946810566","doi":"10.1149/09001.0079ecst","title":"Flash Lamp Annealed Polycrystalline Silicon TFT Dependence on Surface Morphology and the Back-Channel Material Interface","year":2019,"lang":"en","type":"article","venue":"ECS Transactions","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Research & Development Corporation","funders":"","keywords":"Materials science; Polycrystalline silicon; Nanocrystalline silicon; Silicon; Silicon nitride; Optoelectronics; Thin-film transistor; Amorphous silicon; LOCOS; Annealing (glass); Amorphous solid; Composite material; Crystalline silicon; Layer (electronics); Crystallography; Chemistry","score_opus":0.007062694128844834,"score_gpt":0.1949759559720237,"score_spread":0.18791326184317886,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2946810566","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99867576,0.00019246011,0.00061216217,0.00001594427,0.0000064311225,0.000004754569,0.000106622196,0.00002417106,0.0003615387],"genre_scores_gemma":[0.9988539,0.00014141186,0.0004642468,0.000008092856,0.0000032867265,0.0000060022794,0.00011462032,0.00001334891,0.00039505563],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998995,0.0000055875253,0.000004426382,0.00002537107,0.000034955923,0.000030243176],"domain_scores_gemma":[0.9998,0.000083287494,0.000039379578,0.000023887244,0.000039411698,0.000014065734],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00007742137,0.00016268816,0.00018722082,0.00008519055,0.00012980177,0.00033253356,0.00016035016,0.00022960761,0.0010396389],"category_scores_gemma":[0.00027621663,0.00010019538,0.00012274538,0.0001370242,0.00018647009,0.000231697,0.00008114674,0.00022149348,0.00020652407],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00004584108,0.000005444747,0.00027294643,0.000017721277,0.0000030154379,0.000062636056,0.000026677075,0.000058150177,0.99884474,0.00001238267,0.000015613876,0.0006349452],"study_design_scores_gemma":[0.0000030566566,0.0001311954,0.0069665196,0.0000019538886,0.0000062345207,0.00010770257,0.00004174603,0.0006657808,0.99184614,0.000008074643,0.00021826658,0.000003251204],"about_ca_topic_score_codex":0.0009820688,"about_ca_topic_score_gemma":0.0016419917,"teacher_disagreement_score":0.0010396389,"about_ca_system_score_codex":0.00022204258,"about_ca_system_score_gemma":0.00011167055,"threshold_uncertainty_score":0.0034778714},"labels":[],"label_agreement":null},{"id":"W2946833696","doi":"10.1002/sdtp.13056","title":"60‐5: <i>Late‐News Paper</i> : 17‐inch Transparent AMOLED Display With Self‐Assembled Auxiliary Electrode","year":2019,"lang":"en","type":"article","venue":"SID Symposium Digest of Technical Papers","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":7,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"OTI Lumionics (Canada)","funders":"","keywords":"AMOLED; Materials science; Electrode; Optoelectronics; Fabrication; Cathode; OLED; Drop (telecommunication); Nanotechnology; Layer (electronics); Active matrix; Computer science; Electrical engineering; Chemistry; Engineering; Telecommunications","score_opus":0.004077128237660398,"score_gpt":0.18773936561878413,"score_spread":0.18366223738112372,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2946833696","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.4853254,0.0063979207,0.14645348,0.006254188,0.011689404,0.00053316384,0.0051285806,0.008240642,0.32997718],"genre_scores_gemma":[0.62047964,0.0032015336,0.05665012,0.0013273916,0.0014558684,0.00015817898,0.003657033,0.0014148772,0.3116553],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998796,0.000007619528,0.0000047104895,0.000017478322,0.00006905016,0.00002153876],"domain_scores_gemma":[0.999874,0.000021627418,0.000013218204,0.000015502994,0.000047155532,0.000028469127],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00015586922,0.0002205725,0.00022956797,0.00035923955,0.00029516473,0.0007070707,0.00042108973,0.0004389742,0.008705145],"category_scores_gemma":[0.00021841422,0.00017149844,0.00021663409,0.00020372569,0.00016394127,0.00038042307,0.00025733403,0.00058011437,0.0035216743],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00011221222,0.00006324012,0.0003633475,0.00011814652,0.000014663376,0.00071790925,0.00006887168,0.000099087214,0.935069,0.001410533,0.040055115,0.021907806],"study_design_scores_gemma":[0.000027297829,0.0002159365,0.0038150155,0.000018455776,0.000028054714,0.0009127885,0.000034986253,0.0021226835,0.7822487,0.00018886712,0.21035185,0.000035404973],"about_ca_topic_score_codex":0.00042335695,"about_ca_topic_score_gemma":0.0009463536,"teacher_disagreement_score":0.008705145,"about_ca_system_score_codex":0.00024087793,"about_ca_system_score_gemma":0.00017965263,"threshold_uncertainty_score":0.029121578},"labels":[],"label_agreement":null},{"id":"W2954455053","doi":"10.1002/jsid.824","title":"Curved OLED microdisplays","year":2019,"lang":"en","type":"article","venue":"Journal of the Society for Information Display","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":10,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"","funders":"European Commission; Institut national de la recherche scientifique","keywords":"Wafer; OLED; Materials science; Optoelectronics; Computer science; Silicon; AMOLED; Curvature; CMOS; Radius of curvature; Diagonal; Layer (electronics); Nanotechnology; Active matrix","score_opus":0.00332348166676453,"score_gpt":0.176931182597862,"score_spread":0.17360770093109748,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2954455053","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.84008545,0.00273632,0.1220545,0.0004085763,0.00044024413,0.00030425887,0.002124746,0.003828873,0.02801707],"genre_scores_gemma":[0.9313902,0.0005956802,0.048637886,0.00014673967,0.000017856615,0.00010040366,0.0005807357,0.00014774028,0.018382587],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998254,0.000009885345,0.000008031871,0.000057605008,0.0000677484,0.00003140819],"domain_scores_gemma":[0.99980444,0.000035380195,0.00003366097,0.00004462115,0.000057561734,0.000024432307],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00011275179,0.0004890782,0.0002248428,0.0003667797,0.0002425705,0.00053736573,0.0005372948,0.0004569133,0.005228008],"category_scores_gemma":[0.00024531543,0.00022418967,0.00025420898,0.00016516747,0.00033519798,0.00033341415,0.00052230596,0.0003288281,0.0017063137],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00006231801,0.000014411393,0.00029948071,0.00006288254,0.000009065976,0.00022276222,0.000044118846,0.0006369365,0.98860896,0.00205262,0.00061656546,0.0073699304],"study_design_scores_gemma":[0.000015102024,0.00019313215,0.0025380666,0.000014297381,0.000010708786,0.0005247709,0.000033696,0.004248215,0.9686452,0.0003954522,0.023342606,0.000038689363],"about_ca_topic_score_codex":0.00051292434,"about_ca_topic_score_gemma":0.0008839091,"teacher_disagreement_score":0.005228008,"about_ca_system_score_codex":0.0005626418,"about_ca_system_score_gemma":0.00016956023,"threshold_uncertainty_score":0.017489433},"labels":[],"label_agreement":null},{"id":"W2956602520","doi":"10.5539/apr.v11n4p11","title":"Investigation of Spin-on Dopants and Curing Temperature Effect on Dopant Activation","year":2019,"lang":"en","type":"article","venue":"Applied Physics Research","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":3,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":false,"route_ca_venue":true,"route_about_ca":false,"ca_institutions":"","funders":"Wilkes University","keywords":"Dopant; Materials science; Dopant Activation; Boron; Doping; Sheet resistance; Curing (chemistry); Chemical engineering; Analytical Chemistry (journal); Composite material; Chemistry; Optoelectronics; Organic chemistry","score_opus":0.029760001183315,"score_gpt":0.2831725944155433,"score_spread":0.2534125932322283,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2956602520","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9849156,0.0036911145,0.0086967535,0.000083389146,0.0000795001,0.00005560353,0.0001464434,0.00012762367,0.002204063],"genre_scores_gemma":[0.9871897,0.0026362047,0.00794092,0.000063594394,0.000025249657,0.000037726,0.00013022975,0.0001112708,0.0018650807],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9997017,0.000043914206,0.00002240639,0.00007699932,0.000114682814,0.00004033485],"domain_scores_gemma":[0.9990109,0.00044687343,0.00022747734,0.000088042914,0.000187965,0.000038792652],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00036039602,0.000550704,0.00032599136,0.00021458411,0.00014946725,0.00032028975,0.00025845945,0.00031162964,0.001136601],"category_scores_gemma":[0.0010014657,0.00028540826,0.00022438212,0.00024407591,0.00019666941,0.00036556405,0.00014131781,0.0004660564,0.00029304382],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00005472339,0.000012386802,0.00023502784,0.00008345324,0.000009156358,0.00004646675,0.000036059668,0.000057192156,0.9975909,0.00004528265,0.000025747493,0.0018036518],"study_design_scores_gemma":[0.000002227136,0.000116495845,0.0013837847,0.0000049358623,0.000020734333,0.00007276301,0.000015632688,0.00045000293,0.99735755,0.000009725487,0.00056224305,0.000003871115],"about_ca_topic_score_codex":0.00024513915,"about_ca_topic_score_gemma":0.00052602665,"teacher_disagreement_score":0.001136601,"about_ca_system_score_codex":0.00014137752,"about_ca_system_score_gemma":0.00016867752,"threshold_uncertainty_score":0.0038022995},"labels":[],"label_agreement":null},{"id":"W2970265754","doi":"10.1038/s41598-019-48981-w","title":"Beyond 30% Conversion Efficiency in Silicon Solar Cells: A Numerical Demonstration","year":2019,"lang":"en","type":"article","venue":"Scientific Reports","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":210,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Toronto","funders":"Natural Sciences and Engineering Research Council of Canada; U.S. Department of Energy","keywords":"Passivation; Materials science; Optoelectronics; Energy conversion efficiency; Auger effect; Crystalline silicon; Auger; Monocrystalline silicon; Solar cell; Doping; Optics; Photonic crystal; Charge carrier; Silicon; Physics; Nanotechnology; Atomic physics","score_opus":0.005366866701304754,"score_gpt":0.18981356465607185,"score_spread":0.1844466979547671,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2970265754","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9471014,0.00029777954,0.02941225,0.00039504518,0.00003337396,0.000048945414,0.00027496307,0.0002216697,0.022214534],"genre_scores_gemma":[0.9843444,0.00013023094,0.014267152,0.000030293188,0.0000046011046,0.000038254133,0.00006419033,0.00002468615,0.001096258],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99994135,0.000009589118,0.0000024072704,0.0000052357655,0.000027708586,0.000013786579],"domain_scores_gemma":[0.9997223,0.0001822635,0.000027367005,0.000023262099,0.00003279277,0.000011975443],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00019618584,0.00026362712,0.0002732195,0.00017980394,0.00036112775,0.0005042083,0.00034051144,0.00067308784,0.0011583219],"category_scores_gemma":[0.0009896496,0.00015894009,0.00020225301,0.00031139358,0.00048766463,0.0003200187,0.0002982202,0.00038296107,0.00012008884],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00008014104,0.00010946296,0.0015775652,0.00011789524,0.000021362499,0.00022357206,0.00013653256,0.9584241,0.020282952,0.013260212,0.00045337915,0.0053127916],"study_design_scores_gemma":[0.000023639177,0.0000310252,0.00025357617,0.0000057967763,0.0000040826358,0.000019089188,0.000013047364,0.99453896,0.0035305845,0.0012512151,0.00032463987,0.000004356566],"about_ca_topic_score_codex":0.006912533,"about_ca_topic_score_gemma":0.0053967983,"teacher_disagreement_score":0.006912533,"about_ca_system_score_codex":0.0004360922,"about_ca_system_score_gemma":0.00053064554,"threshold_uncertainty_score":0.013744593},"labels":[],"label_agreement":null},{"id":"W2977872425","doi":"","title":"Dynamic-effect compensating technique for stable a-Si:H AMOLED displays","year":2005,"lang":"en","type":"article","venue":"UCL Discovery (University College London)","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"AMOLED; Backplane; OLED; Materials science; Degradation (telecommunications); Diode; Optoelectronics; Computer science; Electronic engineering; Computer hardware; Thin-film transistor; Active matrix; Engineering; Nanotechnology","score_opus":0.004608492381404947,"score_gpt":0.1812849486027963,"score_spread":0.17667645622139133,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2977872425","genre_codex":"empirical","genre_gemma":"methods","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"methods","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.5640801,0.0019455286,0.4233861,0.00052658934,0.00021898106,0.00011789671,0.00016805407,0.0025823915,0.006974339],"genre_scores_gemma":[0.9468492,0.000329921,0.050230015,0.00007008765,0.00003544009,0.000032840526,0.00004062107,0.00005964701,0.0023521134],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999083,0.000009771007,0.000004809134,0.000015878646,0.000049914488,0.000011357646],"domain_scores_gemma":[0.9998678,0.000039141338,0.000033444892,0.00001716124,0.00003079232,0.000011579132],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0001253209,0.00019016929,0.00014037968,0.00018939354,0.00016994645,0.00024418786,0.00056167255,0.00030835747,0.00087295583],"category_scores_gemma":[0.00028935226,0.00011894688,0.00009937972,0.0001653673,0.00018758714,0.00029733617,0.00018770272,0.000307653,0.00029858237],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000041950567,0.000010877512,0.00010308915,0.000034090088,0.000004452209,0.00006944675,0.000025774203,0.0008831674,0.9847378,0.00097519945,0.0002849063,0.012829286],"study_design_scores_gemma":[0.000027604456,0.00019447063,0.00063628634,0.000007383148,0.000011398508,0.00030898265,0.000010051293,0.039445546,0.9527414,0.0004293426,0.0061714323,0.000016159962],"about_ca_topic_score_codex":0.00029533755,"about_ca_topic_score_gemma":0.000418419,"teacher_disagreement_score":0.00087295583,"about_ca_system_score_codex":0.0002485633,"about_ca_system_score_gemma":0.0001343776,"threshold_uncertainty_score":0.0029203892},"labels":[],"label_agreement":null},{"id":"W2983228654","doi":"10.22215/etd/2014-10518","title":"Light Trapping in Thin-Film Silicon Solar Cells Via Plasmonic Metal Nanoparticles","year":2014,"lang":"en","type":"dissertation","venue":"","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":3,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Carleton University","funders":"University of Waterloo; University of Ottawa","keywords":"Plasmonic solar cell; Materials science; Optoelectronics; Thin film; Silicon; Plasmon; Solar cell; Quantum dot solar cell; Short circuit; Dielectric; Crystalline silicon; Polymer solar cell; Nanotechnology; Electrical engineering; Engineering; Voltage","score_opus":0.006317485607858388,"score_gpt":0.1943697471368236,"score_spread":0.1880522615289652,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2983228654","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.96737695,0.0009992126,0.009867864,0.0004126738,0.000058653888,0.00002899679,0.000075561715,0.00007264835,0.021107469],"genre_scores_gemma":[0.9847403,0.0011078866,0.0077613927,0.00004206786,0.000007023349,0.000019632316,0.000046004865,0.000018640761,0.00625699],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99996674,0.0000034662135,0.000001099424,0.0000051033053,0.000018516794,0.00000518732],"domain_scores_gemma":[0.9999567,0.00001968299,0.000007952146,0.0000032244807,0.000008900318,0.000003495664],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00006486683,0.00013548772,0.0001464179,0.00009281804,0.00024685037,0.0005120111,0.0002409675,0.00029258739,0.00095803756],"category_scores_gemma":[0.00017405904,0.0001531309,0.00020159321,0.00011576326,0.00029899084,0.00027459208,0.00015201679,0.0002633764,0.0001949986],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00012342793,0.00018143198,0.0013454899,0.0004843283,0.00004574837,0.0006641705,0.0004469712,0.3355431,0.6148455,0.030537816,0.0017399018,0.01404204],"study_design_scores_gemma":[0.000057096433,0.00014203302,0.00093197334,0.00004120644,0.0000214823,0.00009575341,0.00013602608,0.8552934,0.13765433,0.0021655103,0.0034421885,0.000019031899],"about_ca_topic_score_codex":0.002928231,"about_ca_topic_score_gemma":0.0029329166,"teacher_disagreement_score":0.002928231,"about_ca_system_score_codex":0.00054527406,"about_ca_system_score_gemma":0.00029999448,"threshold_uncertainty_score":0.0058223605},"labels":[],"label_agreement":null},{"id":"W2989400041","doi":"10.1016/j.mee.2019.111182","title":"Schottky barrier diodes fabricated with metal oxides AgOx/IGZO","year":2019,"lang":"en","type":"article","venue":"Microelectronic Engineering","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":17,"is_retracted":false,"has_abstract":false,"route_ca_aff":false,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"","funders":"Instituto Politécnico Nacional; Swine Innovation Porc","keywords":"Materials science; Schottky barrier; Optoelectronics; Saturation current; Schottky diode; Sputtering; Thermionic emission; Passivation; Layer (electronics); Indium tin oxide; Diode; Sputter deposition; Amorphous solid; Cathode; Nanotechnology; Thin film; Chemistry; Voltage","score_opus":0.0019877381907154944,"score_gpt":0.14407484326953518,"score_spread":0.1420871050788197,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2989400041","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9942719,0.00035773663,0.0018260574,0.00008368631,0.00010084663,0.000037156937,0.0003615368,0.0002436592,0.002717397],"genre_scores_gemma":[0.9840836,0.0004569749,0.008922607,0.00007464019,0.000023279661,0.000054541888,0.0003789566,0.00009197341,0.0059134406],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998165,0.000010824822,0.000008664757,0.000045669447,0.00006450474,0.000053820535],"domain_scores_gemma":[0.9997899,0.000042637923,0.0000418309,0.000037161415,0.000053011605,0.000035502235],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00020630225,0.000404161,0.00051737134,0.00035374635,0.00048164075,0.0005967919,0.0009035174,0.000703128,0.002432103],"category_scores_gemma":[0.0004164816,0.00041889813,0.0002722034,0.00039264432,0.00037887873,0.00047091258,0.00038013505,0.00069499796,0.00083999964],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00008194309,0.00001357039,0.0001528681,0.00004813195,0.000008203461,0.00006542893,0.00003486985,0.0000397688,0.99881566,0.00020388197,0.00010745105,0.0004282443],"study_design_scores_gemma":[0.000033209664,0.00016495644,0.0029795852,0.000008696602,0.00001503177,0.00008314623,0.00004119894,0.0007809786,0.9948485,0.00008835513,0.00094786834,0.0000084298235],"about_ca_topic_score_codex":0.0010285436,"about_ca_topic_score_gemma":0.0032469865,"teacher_disagreement_score":0.002432103,"about_ca_system_score_codex":0.00043627137,"about_ca_system_score_gemma":0.00039608552,"threshold_uncertainty_score":0.008136213},"labels":[],"label_agreement":null},{"id":"W2991269718","doi":"10.1007/s10854-019-02457-9","title":"A Sellmeier extended empirical model for the spectral dependence of the refractive index applied to the case of thin-film silicon and some of its more common alloys","year":2019,"lang":"en","type":"article","venue":"Journal of Materials Science Materials in Electronics","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":4,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of British Columbia, Okanagan Campus; University of British Columbia","funders":"Natural Sciences and Engineering Research Council of Canada; Mitacs","keywords":"Refractive index; Silicon; Thin film; Polynomial; Mathematics; Optics; Materials science; Mathematical analysis; Physics; Optoelectronics; Nanotechnology","score_opus":0.013451489296017919,"score_gpt":0.26745019466901565,"score_spread":0.25399870537299774,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2991269718","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.03885739,0.0025942582,0.9265287,0.00092456327,0.00020505418,0.00008362827,0.00042874698,0.00040022004,0.029977541],"genre_scores_gemma":[0.7869928,0.0062582754,0.12714839,0.00047806796,0.00026312313,0.00024353436,0.00064633257,0.0003755574,0.07759393],"study_design_codex":"theoretical_or_conceptual","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99975747,0.0000515639,0.000011758889,0.000046293844,0.00010075975,0.00003216623],"domain_scores_gemma":[0.99959534,0.00015856193,0.000038359038,0.00008485914,0.00011343966,0.000009496538],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0007074111,0.0007876412,0.00053520815,0.000740902,0.00051564083,0.0011203575,0.0021267212,0.0015310082,0.0024294597],"category_scores_gemma":[0.0016468328,0.00047425355,0.0007582873,0.00088217086,0.0007603952,0.0027201546,0.0004483263,0.0014869289,0.0013085484],"study_design_candidate":"simulation_or_modeling","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000059735987,0.0001299247,0.0010475542,0.00033311496,0.000054806264,0.0008377729,0.0004523844,0.40689477,0.03653365,0.5152365,0.0043727085,0.034047164],"study_design_scores_gemma":[0.000005369629,0.000020159023,0.00045032884,0.000029753379,0.00001470537,0.00038790904,0.00005258547,0.8919179,0.0024415657,0.09886784,0.005778748,0.00003322273],"about_ca_topic_score_codex":0.0021219966,"about_ca_topic_score_gemma":0.0027903905,"teacher_disagreement_score":0.0024294597,"about_ca_system_score_codex":0.00062079646,"about_ca_system_score_gemma":0.0005991314,"threshold_uncertainty_score":0.008127332},"labels":[],"label_agreement":null},{"id":"W2991762847","doi":"10.1039/c9nj04851k","title":"Functionalization of commercial pigment Hostasol Red GG for incorporation into organic thin-film transistors","year":2019,"lang":"en","type":"article","venue":"New Journal of Chemistry","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":5,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Ottawa","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Chemistry; Surface modification; Pigment; Thin-film transistor; Thin film; Nanotechnology; Organic chemistry; Combinatorial chemistry; Layer (electronics)","score_opus":0.0075622530120289305,"score_gpt":0.19687727657993204,"score_spread":0.1893150235679031,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2991762847","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9870293,0.0008205566,0.009904356,0.000086297354,0.000043874777,0.000056063578,0.00014268956,0.00015843475,0.001758455],"genre_scores_gemma":[0.98565,0.0009356241,0.011048408,0.000036734575,0.0000071575173,0.000030117266,0.00015042874,0.00005484963,0.0020866375],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998815,0.000021142621,0.000007794048,0.000023915954,0.000031143296,0.00003451453],"domain_scores_gemma":[0.999913,0.000019765494,0.000019175252,0.000012247068,0.000020549334,0.000015306603],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00019594577,0.00038547686,0.00019734979,0.00017873681,0.000118586744,0.00021150045,0.00022539958,0.0003101696,0.0007998023],"category_scores_gemma":[0.00017804367,0.00012002552,0.00020930477,0.00015981529,0.00015952144,0.00020016954,0.00016606983,0.00035198682,0.00030096306],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000011020977,0.0000064371716,0.000028998851,0.00002165626,0.0000017981523,0.000039852664,0.0000110054625,0.0000581578,0.999191,0.0000736172,0.000012499876,0.0005439303],"study_design_scores_gemma":[0.000001329784,0.000046939575,0.0001596706,0.0000013807825,0.0000035828098,0.000034336623,0.0000058778896,0.00017641927,0.99899226,0.000006779108,0.00056947843,0.0000020147177],"about_ca_topic_score_codex":0.0006921986,"about_ca_topic_score_gemma":0.0012805851,"teacher_disagreement_score":0.0007998023,"about_ca_system_score_codex":0.0002064833,"about_ca_system_score_gemma":0.00017874107,"threshold_uncertainty_score":0.002675593},"labels":[],"label_agreement":null},{"id":"W2998437992","doi":"10.1109/ted.2019.2956890","title":"CMOS-Like Logic Circuits With Unipolar Thin-Film Transistors on Flexible Substrate","year":2019,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":11,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"NAND gate; CMOS; Pass transistor logic; Logic gate; Electronic circuit; NAND logic; Electronic engineering; NMOS logic; AND-OR-Invert; Digital electronics; Logic level; NOR gate; Computer science; Transistor; Logic family; Electrical engineering; Engineering; Logic synthesis; Voltage","score_opus":0.010009416608432404,"score_gpt":0.20398385856496737,"score_spread":0.19397444195653496,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2998437992","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9596409,0.00063252146,0.034657937,0.000071828545,0.000063786756,0.000037340717,0.00012908452,0.00027639774,0.0044901413],"genre_scores_gemma":[0.98477465,0.00020968608,0.013920703,0.000022590335,0.000010832121,0.000008778162,0.000049436127,0.000012353693,0.0009908951],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999404,0.0000059491204,0.000004598369,0.000011717915,0.000026218278,0.000011067184],"domain_scores_gemma":[0.9998654,0.000040723207,0.00003107871,0.00002739628,0.000024837918,0.000010507622],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00007521599,0.0001993889,0.00014362739,0.00011927354,0.00013019759,0.0003253099,0.00040856624,0.00023319165,0.0009927195],"category_scores_gemma":[0.000279196,0.00010433305,0.00013834442,0.00014479816,0.00016530234,0.00035674084,0.00013694387,0.00016953454,0.0002624617],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000054712058,0.000013533418,0.00053078553,0.000077822275,0.000016106806,0.00036471488,0.000027608328,0.001868359,0.98793656,0.001196291,0.00012316743,0.0077903173],"study_design_scores_gemma":[0.000026808306,0.00049693213,0.0032580902,0.000016300535,0.00003831085,0.00074537686,0.00004752831,0.03256135,0.95832556,0.00067154097,0.0037928342,0.00001935384],"about_ca_topic_score_codex":0.00039725532,"about_ca_topic_score_gemma":0.0010266462,"teacher_disagreement_score":0.0009927195,"about_ca_system_score_codex":0.0001877815,"about_ca_system_score_gemma":0.00013601195,"threshold_uncertainty_score":0.003320992},"labels":[],"label_agreement":null},{"id":"W3004746645","doi":"10.1063/1.5128664","title":"Photonic crystal light trapping: Beyond 30% conversion efficiency for silicon photovoltaics","year":2020,"lang":"en","type":"article","venue":"APL Photonics","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":46,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Toronto","funders":"","keywords":"Materials science; Optoelectronics; Photovoltaics; Energy conversion efficiency; Photonic crystal; Silicon; Crystalline silicon; Trapping; Monocrystalline silicon; Solar cell; Plasmonic solar cell; Photovoltaic system; Optics; Physics; Electrical engineering","score_opus":0.0126751142432486,"score_gpt":0.19858903061603436,"score_spread":0.18591391637278576,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3004746645","genre_codex":"review","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.0593651,0.74339163,0.10277752,0.004358079,0.0009895669,0.00009941645,0.00024576188,0.0004672166,0.088305674],"genre_scores_gemma":[0.40525445,0.5082293,0.055293597,0.0009821408,0.00062556827,0.00016571625,0.00032025945,0.00015442286,0.028974522],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998727,0.000011066741,0.000006361188,0.000020290834,0.00007503197,0.000014692023],"domain_scores_gemma":[0.99991894,0.000045810404,0.000007741713,0.00000480764,0.000018241768,0.0000045097963],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00027934008,0.0003564383,0.00033364785,0.00033204223,0.0003280678,0.0010608061,0.00041645142,0.0008772919,0.0015663309],"category_scores_gemma":[0.00031060015,0.00025532147,0.00026798976,0.00028661298,0.0004709541,0.0011126354,0.0003518615,0.0011637084,0.0010237425],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00010640593,0.00015126001,0.0005842339,0.0048811757,0.00005739847,0.0006414927,0.0002708669,0.015985852,0.36043543,0.33907866,0.012025323,0.26578203],"study_design_scores_gemma":[0.000018500255,0.00040343564,0.00093217846,0.001100397,0.000061252365,0.001284296,0.00014362638,0.031482395,0.26947865,0.1418653,0.55315596,0.00007408102],"about_ca_topic_score_codex":0.0005020067,"about_ca_topic_score_gemma":0.0006639877,"teacher_disagreement_score":0.0015663309,"about_ca_system_score_codex":0.00078336115,"about_ca_system_score_gemma":0.00043301005,"threshold_uncertainty_score":0.0056836605},"labels":[],"label_agreement":null},{"id":"W3005129215","doi":"10.11591/ijeecs.v18.i3.pp1188-1198","title":"Development of photodiode via the rapid melt growth (RMG) materials for energy conversion device","year":2020,"lang":"en","type":"article","venue":"Indonesian Journal of Electrical Engineering and Computer Science","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"","funders":"Queen's University Belfast; Queen's University; Trinity College Dublin; Universiti Tun Hussein Onn Malaysia","keywords":"Photodiode; Materials science; Polycrystalline silicon; Sheet resistance; Crystallite; Annealing (glass); Optoelectronics; Diode; Ion implantation; Germanium; Equivalent series resistance; Analytical Chemistry (journal); Silicon; Ion; Composite material; Layer (electronics); Electrical engineering; Chemistry; Metallurgy; Thin-film transistor","score_opus":0.009151182853236996,"score_gpt":0.17802476518830104,"score_spread":0.16887358233506405,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3005129215","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.97653884,0.0013538857,0.019359415,0.000107452244,0.000085508174,0.000081909704,0.00024730602,0.00034056537,0.0018850715],"genre_scores_gemma":[0.96644187,0.00056761457,0.030768938,0.000026892354,0.000016310196,0.00007812485,0.00019499176,0.000055108,0.0018501114],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99980897,0.000015058635,0.000013842811,0.000049133596,0.00009026061,0.000022867207],"domain_scores_gemma":[0.9998367,0.000020231324,0.00006160465,0.000028630446,0.000039163646,0.000013591298],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00023945363,0.00029053373,0.0002089821,0.00022339783,0.000113221635,0.0002887025,0.00035176842,0.00033552697,0.0006197837],"category_scores_gemma":[0.00025372472,0.00023539242,0.00024352524,0.000107414686,0.00015420126,0.00047772974,0.00023654773,0.0002363347,0.00023061795],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000017698043,0.0000041708654,0.00024647426,0.00003482495,0.0000035666285,0.00005678073,0.000020170344,0.00007075667,0.99758375,0.00015658476,0.00004106392,0.0017641527],"study_design_scores_gemma":[0.000007503134,0.0002665065,0.0017779678,0.000004485623,0.000008008698,0.00021703783,0.000018483295,0.00068837596,0.9941182,0.000031860884,0.0028552944,0.0000061826727],"about_ca_topic_score_codex":0.00019805008,"about_ca_topic_score_gemma":0.00044168578,"teacher_disagreement_score":0.0006197837,"about_ca_system_score_codex":0.00027011117,"about_ca_system_score_gemma":0.00011479536,"threshold_uncertainty_score":0.0020733476},"labels":[],"label_agreement":null},{"id":"W3008650212","doi":"10.1063/1.5113875","title":"Transmission electron microscopy dislocation study of Ge-on-Si films supporting a new lattice-mismatch relaxation mechanism","year":2020,"lang":"en","type":"article","venue":"Journal of Applied Physics","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":3,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McGill University","funders":"Natural Sciences and Engineering Research Council of Canada; McGill University","keywords":"Dislocation; Transmission electron microscopy; Nucleation; Materials science; Epitaxy; Crystallography; Relaxation (psychology); Condensed matter physics; Thin film; Germanium; Silicon; Nanotechnology; Optoelectronics; Composite material; Chemistry; Layer (electronics); Physics","score_opus":0.013328981951023642,"score_gpt":0.24453154125481746,"score_spread":0.23120255930379383,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3008650212","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9975351,0.00030147517,0.0013137546,0.000019064086,0.0000040645095,0.0000060617413,0.000093530805,0.000023275443,0.00070376805],"genre_scores_gemma":[0.99440044,0.0002597453,0.004221033,0.000014871326,0.000003223092,0.0000075411663,0.00016934976,0.000010270442,0.0009134803],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99996674,0.0000027075341,0.00000259869,0.000007378999,0.000012449859,0.000008145497],"domain_scores_gemma":[0.99993134,0.000015855887,0.0000129745395,0.00000820676,0.000022653565,0.000008987492],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00006141231,0.0001878327,0.00013064529,0.00015281132,0.00015310111,0.00014960727,0.0002275737,0.00017152214,0.00071373786],"category_scores_gemma":[0.000110396526,0.000115864415,0.00012065148,0.0001372177,0.00012146414,0.00016669584,0.00010030064,0.00018522576,0.00009842163],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000015720747,0.00000818079,0.00054446777,0.000023066828,0.0000043314676,0.00010669238,0.000033058062,0.000077669305,0.9985806,0.000050345796,0.000014378631,0.0005416723],"study_design_scores_gemma":[0.000011291553,0.0002814998,0.025460243,0.000014375292,0.00002746223,0.0009512005,0.00018043636,0.0066829235,0.96465576,0.00008506969,0.0016371416,0.000012573629],"about_ca_topic_score_codex":0.0009740448,"about_ca_topic_score_gemma":0.0010923331,"teacher_disagreement_score":0.0009740448,"about_ca_system_score_codex":0.000166912,"about_ca_system_score_gemma":0.00007407779,"threshold_uncertainty_score":0.0023877025},"labels":[],"label_agreement":null},{"id":"W3010345749","doi":"10.1166/jnn.2020.18494","title":"Design on a Novel Titanium Dioxide Irregularly Distributed Bragg Reflector for Thin Film Silicon Solar Cells","year":2020,"lang":"en","type":"article","venue":"Journal of Nanoscience and Nanotechnology","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"York University","funders":"","keywords":"Materials science; Titanium dioxide; Silicon dioxide; Distributed Bragg reflector; Silicon; Wafer; Thin film; Optoelectronics; Titanium; Optics; Wavelength; Nanotechnology; Composite material","score_opus":0.027422784899509816,"score_gpt":0.2247828748382303,"score_spread":0.1973600899387205,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3010345749","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.2831289,0.0012562221,0.6965884,0.0005027216,0.0001357345,0.00018917072,0.00041392955,0.0018229808,0.015961938],"genre_scores_gemma":[0.8421396,0.00062415685,0.15230651,0.000116304276,0.000021060534,0.000109989036,0.00018406546,0.000079541984,0.0044187447],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99983156,0.00001586807,0.000007751215,0.000043464646,0.00007699735,0.00002437625],"domain_scores_gemma":[0.9999287,0.000007135335,0.000020038757,0.000009460477,0.000028238162,0.0000064505803],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00013753156,0.00045983726,0.0003654449,0.00015586936,0.00018911707,0.00047933837,0.0008825067,0.00046639767,0.00077086006],"category_scores_gemma":[0.00013592107,0.00024037251,0.00054960145,0.00021402219,0.00014544494,0.00038930352,0.00019085538,0.00020856009,0.00049912784],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00011593671,0.00007035673,0.0011334261,0.00025913186,0.0001026682,0.0002696041,0.00006847354,0.10133539,0.86133367,0.0054333988,0.0014816974,0.028396236],"study_design_scores_gemma":[0.000051002407,0.000422557,0.000769881,0.000013968385,0.00007868987,0.00034386056,0.00004102601,0.7085173,0.28084856,0.00064443925,0.008228398,0.00004043675],"about_ca_topic_score_codex":0.0024956984,"about_ca_topic_score_gemma":0.0037492763,"teacher_disagreement_score":0.0024956984,"about_ca_system_score_codex":0.0006954054,"about_ca_system_score_gemma":0.00048138466,"threshold_uncertainty_score":0.005045533},"labels":[],"label_agreement":null},{"id":"W3011574335","doi":"10.1063/1.5143249","title":"An infrared transmission study of Ge:Mn thick films prepared by ion implantation and post-annealing","year":2020,"lang":"en","type":"article","venue":"Journal of Applied Physics","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":2,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Université de Montréal; Brock University","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Annealing (glass); Amorphous solid; Analytical Chemistry (journal); Germanium; Materials science; Ion implantation; Infrared; Crystallite; Crystallinity; Ion; Epitaxy; X-ray crystallography; Infrared spectroscopy; Diffraction; Crystallography; Chemistry; Nanotechnology; Optics; Metallurgy; Silicon","score_opus":0.010321005028748446,"score_gpt":0.22159283721641582,"score_spread":0.21127183218766737,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3011574335","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9977011,0.00033039865,0.0007756869,0.0000186939,0.000006533925,0.00000631619,0.00011264363,0.000024688448,0.0010238632],"genre_scores_gemma":[0.99644417,0.00034540676,0.0013037684,0.000018265038,0.0000048909924,0.000010855736,0.00021409306,0.000024849005,0.0016337425],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999559,0.0000041481926,0.0000021662124,0.000011546287,0.000014767123,0.000011483144],"domain_scores_gemma":[0.99985814,0.000044857366,0.00003485422,0.000011804559,0.000036785626,0.000013556548],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00010871773,0.00024084462,0.0001257443,0.00018742408,0.00014570076,0.00019773157,0.00023026793,0.0002000724,0.0017780546],"category_scores_gemma":[0.00018455037,0.00017511562,0.00012552842,0.00018000312,0.00014251636,0.0001870012,0.00006810416,0.00025619272,0.00024535847],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00003656176,0.0000045549364,0.00012550183,0.000010601226,0.000002669891,0.000026115711,0.000013981732,0.000014899396,0.99950266,0.000010426463,0.000009825788,0.00024223753],"study_design_scores_gemma":[0.000009287191,0.00021142005,0.011612368,0.000005689493,0.000024968178,0.00018471327,0.000042242773,0.00045624137,0.9868951,0.00000865011,0.0005455135,0.000003844545],"about_ca_topic_score_codex":0.0012947121,"about_ca_topic_score_gemma":0.001154424,"teacher_disagreement_score":0.0017780546,"about_ca_system_score_codex":0.0001746234,"about_ca_system_score_gemma":0.00007015438,"threshold_uncertainty_score":0.0059482455},"labels":[],"label_agreement":null},{"id":"W3017425519","doi":"10.1109/cicc48029.2020.9075893","title":"Realization of an Energy-Efficient, Full-Swing Decoder with Unipolar TFT Technology","year":2020,"lang":"en","type":"article","venue":"","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Realization (probability); Swing; Logic gate; Pass transistor logic; Computer science; Electronic engineering; Transistor; Electronic circuit; Logic family; Electrical engineering; Logic synthesis; Engineering; Voltage; Mathematics","score_opus":0.0070288921423513374,"score_gpt":0.1749353875666804,"score_spread":0.16790649542432906,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3017425519","genre_codex":"empirical","genre_gemma":"methods","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"methods","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.7452095,0.0010971616,0.24203464,0.00040977137,0.00010943061,0.00012949778,0.00054347864,0.0011572156,0.009309252],"genre_scores_gemma":[0.8879017,0.0004093909,0.109322086,0.00011009866,0.00002128709,0.000030338097,0.00017383073,0.000050466297,0.0019807795],"study_design_codex":"bench_or_experimental","study_design_gemma":"not_applicable","domain_scores_codex":[0.9999492,0.0000034636744,0.0000037060706,0.000011806107,0.000022330527,0.000009475334],"domain_scores_gemma":[0.9999052,0.000018811217,0.000025376006,0.000012542617,0.00002605216,0.00001188465],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00007571939,0.00020139437,0.0002094473,0.00014904611,0.00016843065,0.0003433543,0.00044386135,0.0004567291,0.0007129962],"category_scores_gemma":[0.00017586074,0.00011604963,0.0001566201,0.00013142673,0.00015151652,0.00048817162,0.00012712459,0.00026738262,0.0004669233],"study_design_candidate":"not_applicable","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000031928263,0.00001819983,0.0003138266,0.000075888915,0.000010390403,0.00010331675,0.000020130377,0.0007569676,0.9876124,0.0008428327,0.00029707066,0.009917055],"study_design_scores_gemma":[0.000024139375,0.0003527549,0.0012591353,0.000011621378,0.00002540001,0.0006533479,0.00002746739,0.022171468,0.96930355,0.00063833117,0.0055128657,0.000019889772],"about_ca_topic_score_codex":0.0006857821,"about_ca_topic_score_gemma":0.0016591342,"teacher_disagreement_score":0.0007129962,"about_ca_system_score_codex":0.0002782736,"about_ca_system_score_gemma":0.0003973426,"threshold_uncertainty_score":0.002385199},"labels":[],"label_agreement":null},{"id":"W3017915629","doi":"10.1109/ifetc46817.2019.9073702","title":"Heterogeneous Integration of InGaN Micro-LEDs with a:Si TFT Arrays on Flexible Substrates","year":2019,"lang":"en","type":"article","venue":"","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Light-emitting diode; Materials science; Optoelectronics; Wafer; Substrate (aquarium); Diode; Thin-film transistor; Wafer bonding; Gallium nitride; Electronic engineering; Nanotechnology; Engineering","score_opus":0.00912738593599916,"score_gpt":0.19222044569647218,"score_spread":0.18309305976047302,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3017915629","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.98821604,0.0004099044,0.010192989,0.0000220856,0.00002509007,0.000015955307,0.000056668203,0.00008740441,0.0009739477],"genre_scores_gemma":[0.9885749,0.00017556518,0.010151239,0.00001370161,0.00001022413,0.000013256811,0.000052394967,0.000014542703,0.0009940524],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998865,0.000007852581,0.0000060121524,0.000043417942,0.000033188255,0.00002307643],"domain_scores_gemma":[0.99993324,0.000012944433,0.00001597839,0.000013397137,0.000013785691,0.000010651394],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00008142571,0.0002583885,0.00017826639,0.00016964013,0.000121908335,0.00029998363,0.00033955873,0.00019977998,0.00048212195],"category_scores_gemma":[0.00012640357,0.00014199331,0.00018531691,0.00017194315,0.0001253546,0.00029244792,0.0002176932,0.00016223056,0.0001431199],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000015797692,0.000009777358,0.00016238911,0.000013315443,0.0000047505296,0.000048504135,0.000009475601,0.00021036228,0.9981433,0.000040112023,0.000013002649,0.0013291617],"study_design_scores_gemma":[0.0000039929646,0.00009032964,0.0015304933,0.0000018725751,0.000011095271,0.000077350844,0.000016600376,0.0037100886,0.99392104,0.0000224371,0.0006103904,0.000004211081],"about_ca_topic_score_codex":0.0005396563,"about_ca_topic_score_gemma":0.001161349,"teacher_disagreement_score":0.0005396563,"about_ca_system_score_codex":0.00019985181,"about_ca_system_score_gemma":0.00009574914,"threshold_uncertainty_score":0.0016128421},"labels":[],"label_agreement":null},{"id":"W3018891077","doi":"10.1109/ifetc46817.2019.9073769","title":"Fabrication of Thin-Film Transistors Using Large-Area Exfoliation of Single-Crystal MoS<sub>2</sub> Layers and Inkjet-Printing","year":2019,"lang":"en","type":"article","venue":"","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":2,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Materials science; Nanotechnology","score_opus":0.013794918440754382,"score_gpt":0.19264909117144768,"score_spread":0.1788541727306933,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3018891077","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.92642695,0.002238336,0.06434271,0.00021784603,0.00029124704,0.00025502202,0.0017292075,0.00071288843,0.0037858908],"genre_scores_gemma":[0.8626096,0.002481495,0.13031647,0.00011555832,0.000070870294,0.0002629502,0.0007600641,0.00007061191,0.0033123586],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998859,0.000009183333,0.000013160929,0.000033960172,0.000042731048,0.000015197448],"domain_scores_gemma":[0.9998442,0.00006691747,0.000021682448,0.000024029368,0.000028306711,0.000014945381],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0002187264,0.0004141376,0.00033804114,0.00019365322,0.00019044928,0.0003381462,0.00047113575,0.00037480457,0.0008702849],"category_scores_gemma":[0.00031803685,0.00027568333,0.0002972293,0.00020260506,0.00018921717,0.00035253604,0.00017368137,0.00033085977,0.00036890074],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000013970978,0.000005221873,0.000045117755,0.0000337783,0.0000040715604,0.00005237456,0.000010541876,0.00008221935,0.9983596,0.00006544511,0.00003541063,0.001292315],"study_design_scores_gemma":[0.0000068003037,0.00005859666,0.00043137628,0.0000021220287,0.000006535249,0.00008539702,0.000008098528,0.0008417059,0.9976902,0.000038199236,0.0008270005,0.000003920209],"about_ca_topic_score_codex":0.00037336204,"about_ca_topic_score_gemma":0.0011361787,"teacher_disagreement_score":0.0008702849,"about_ca_system_score_codex":0.00024014161,"about_ca_system_score_gemma":0.00020748269,"threshold_uncertainty_score":0.0029113889},"labels":[],"label_agreement":null},{"id":"W3020197605","doi":"10.1109/ifetc46817.2019.9073768","title":"TFT Adder Design on Flexible Substrate","year":2019,"lang":"en","type":"article","venue":"","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Adder; NAND gate; Logic gate; Swing; Inverter; Pass transistor logic; Computer science; Electronic engineering; NAND logic; Electronic circuit; Leakage power; Transistor; Electrical engineering; Engineering; Digital electronics; Voltage; CMOS","score_opus":0.016635322549332636,"score_gpt":0.18878799074652722,"score_spread":0.17215266819719457,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3020197605","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.51446944,0.002519524,0.42555594,0.0006183499,0.00048909814,0.00018929222,0.00082056795,0.0017159735,0.053621862],"genre_scores_gemma":[0.89240474,0.0006724948,0.09887326,0.00008110192,0.000041555955,0.00006140834,0.0002651119,0.000044727098,0.0075556138],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999653,0.0000018414197,0.0000031987622,0.000009946375,0.000011785799,0.000007850175],"domain_scores_gemma":[0.99996734,0.0000039886154,0.0000065341064,0.0000047698613,0.000012890055,0.0000045272523],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00003977502,0.00018714374,0.00014309345,0.00017237848,0.00020364762,0.0004286516,0.00048205804,0.0002346505,0.002508665],"category_scores_gemma":[0.00009206278,0.00009761602,0.00016236349,0.00023549885,0.000088659566,0.00046168402,0.0001447348,0.00012712058,0.0005424243],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00021827634,0.00003683491,0.00082556816,0.00040611924,0.000085081934,0.0010025299,0.00008575644,0.03362735,0.7939008,0.018178174,0.0046572704,0.1469763],"study_design_scores_gemma":[0.000095969786,0.00085493264,0.0025510534,0.00006029274,0.00015244544,0.0021747095,0.00015865413,0.38767338,0.54780495,0.0059492276,0.052449025,0.00007546028],"about_ca_topic_score_codex":0.0007797353,"about_ca_topic_score_gemma":0.0016180659,"teacher_disagreement_score":0.002508665,"about_ca_system_score_codex":0.0002564129,"about_ca_system_score_gemma":0.0003023585,"threshold_uncertainty_score":0.008392334},"labels":[],"label_agreement":null},{"id":"W3023017692","doi":"10.1016/b978-081551497-8.50008-1","title":"Photon Detectors","year":2006,"lang":"en","type":"book-chapter","venue":"Elsevier eBooks","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Simon Fraser University; University of Waterloo","funders":"","keywords":"Optoelectronics; Materials science; Thin-film transistor; Transistor; Fabrication; Detector; Amorphous silicon; Parasitic capacitance; Semiconductor; Image sensor; Capacitance; Electrical engineering; Silicon; Nanotechnology; Electrode; Voltage; Layer (electronics); Optics; Engineering; Physics; Crystalline silicon","score_opus":0.008161078823152727,"score_gpt":0.18195677901634902,"score_spread":0.1737957001931963,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3023017692","genre_codex":"other","genre_gemma":"other","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"other","genre_consensus":"other","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.0016939653,0.008992215,0.044345587,0.0009657691,0.0012511725,0.0000904495,0.0010360266,0.003123545,0.9385013],"genre_scores_gemma":[0.0042582722,0.0035202433,0.010636203,0.00023756149,0.00010295181,0.000040853687,0.000636362,0.0003438892,0.98022366],"study_design_codex":"design_other","study_design_gemma":"not_applicable","domain_scores_codex":[0.99978715,0.00000956488,0.000004081066,0.000051376348,0.00013271932,0.000015047296],"domain_scores_gemma":[0.999835,0.000032887703,0.0000074749064,0.000044764445,0.000059465056,0.000020281788],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00026811552,0.00096206635,0.0007399258,0.0015090089,0.0009146128,0.0019472741,0.0011453681,0.0013796674,0.16413599],"category_scores_gemma":[0.00038320082,0.0006665683,0.0003978691,0.0014809319,0.0004706337,0.0018561205,0.0011617949,0.0017635972,0.116436355],"study_design_candidate":"not_applicable","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00005824229,0.000053419528,0.00018049993,0.00035762278,0.000014364528,0.00011514809,0.0001228473,0.00052341487,0.022755435,0.072850294,0.33302513,0.5699435],"study_design_scores_gemma":[0.0000053019035,0.000015665784,0.00023179848,0.00007936948,0.0000066914085,0.0002877481,0.000020747895,0.0006894172,0.00706935,0.009703416,0.98188055,0.000009980501],"about_ca_topic_score_codex":0.00086173863,"about_ca_topic_score_gemma":0.0021760478,"teacher_disagreement_score":0.16413599,"about_ca_system_score_codex":0.00088286743,"about_ca_system_score_gemma":0.00066280825,"threshold_uncertainty_score":0.5490896},"labels":[],"label_agreement":null},{"id":"W3023415171","doi":"10.1149/ma2020-01161089mtgabs","title":"Influence of Different Carbon Precursors on Optical and Electrical Properties of Silicon Carbonitride Thin Films","year":2020,"lang":"en","type":"article","venue":"ECS Meeting Abstracts","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of New Brunswick; McMaster University","funders":"","keywords":"Materials science; Elastic recoil detection; Thin film; Plasma-enhanced chemical vapor deposition; Silicon; Chemical vapor deposition; Analytical Chemistry (journal); Carbon film; Dielectric; Band gap; Ellipsometry; Silicon oxide; Silicon oxynitride; Rutherford backscattering spectrometry; Silicon nitride; Optoelectronics; Nanotechnology; Chemistry","score_opus":0.0126769181839571,"score_gpt":0.1917940737847848,"score_spread":0.1791171556008277,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3023415171","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9969957,0.001124219,0.00031622595,0.000032668362,0.000026314758,0.000018310004,0.00012895191,0.000025091284,0.0013325944],"genre_scores_gemma":[0.9956345,0.0012124896,0.0018861503,0.000031717067,0.000008851238,0.000029160923,0.00018812621,0.000026818761,0.000982089],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998473,0.000016218219,0.000014646408,0.00003849901,0.000055335197,0.000027980965],"domain_scores_gemma":[0.9996126,0.00017024764,0.00006694729,0.000021480957,0.000088194625,0.00004050317],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00016129614,0.0003970662,0.00019847808,0.00028168096,0.00015113746,0.0002955508,0.00023691654,0.00030681674,0.00088177546],"category_scores_gemma":[0.0005016028,0.00023492741,0.00011659023,0.00023424813,0.0001608578,0.00020090528,0.00011347402,0.0003362699,0.00013763914],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00007858296,0.000015364396,0.00017120692,0.000076662145,0.0000059385766,0.00007220303,0.000024967885,0.000106799154,0.99843854,0.000020526117,0.000023901306,0.00096527155],"study_design_scores_gemma":[0.0000042994284,0.00012861965,0.0017145656,0.0000074454497,0.00001045624,0.00002813506,0.00002359991,0.00041432722,0.9973111,0.0000048134925,0.00034903747,0.000003581187],"about_ca_topic_score_codex":0.00090053806,"about_ca_topic_score_gemma":0.002595491,"teacher_disagreement_score":0.00090053806,"about_ca_system_score_codex":0.0001902734,"about_ca_system_score_gemma":0.00015082577,"threshold_uncertainty_score":0.0029497743},"labels":[],"label_agreement":null},{"id":"W3027120280","doi":"10.1088/1361-6528/ab93f2","title":"Three-dimensional radial-junction ZnO nanowire/a-Si:H core–shell infrared photodiodes","year":2020,"lang":"en","type":"article","venue":"Nanotechnology","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":3,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Canadian Network for Research and Innovation in Machining Technology, Natural Sciences and Engineering Research Council of Canada","keywords":"Materials science; Photodiode; Photocurrent; Optoelectronics; Nanowire; Diode; Infrared; Dark current; Amorphous silicon; Silicon; Depletion region; Semiconductor; Optics; Photodetector; Crystalline silicon","score_opus":0.019847927560914348,"score_gpt":0.19890417359823484,"score_spread":0.17905624603732048,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3027120280","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9864225,0.00020782191,0.011591911,0.000021087559,0.00002449636,0.000026653537,0.00035139333,0.00018626156,0.0011678616],"genre_scores_gemma":[0.975871,0.00020689529,0.02247177,0.000017219854,0.0000035364312,0.000036918947,0.00019329191,0.000021484804,0.0011778588],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999424,0.000002357929,0.0000033851263,0.00002029159,0.000021025673,0.000010553525],"domain_scores_gemma":[0.999948,0.000009032979,0.000012954554,0.0000069460853,0.000013679786,0.000009278381],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00007926054,0.00018910499,0.00020194278,0.000096390504,0.000106583044,0.0002636359,0.00046151763,0.00019309272,0.0005384997],"category_scores_gemma":[0.00010193615,0.00020133716,0.00015273673,0.000108155116,0.00013468778,0.00016136952,0.00012687028,0.00021921514,0.00019831558],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000020699386,0.000010505656,0.00014587281,0.00001681876,0.000003803322,0.000017207476,0.000006912022,0.0002346247,0.99874735,0.00010030387,0.00002814539,0.0006676261],"study_design_scores_gemma":[0.000011863375,0.000055540706,0.0012290064,0.0000016972713,0.0000068813415,0.00006394294,0.000010249287,0.004106982,0.9940392,0.00004368846,0.0004255906,0.0000054866186],"about_ca_topic_score_codex":0.00079556496,"about_ca_topic_score_gemma":0.0016416985,"teacher_disagreement_score":0.00079556496,"about_ca_system_score_codex":0.00025345947,"about_ca_system_score_gemma":0.00015313162,"threshold_uncertainty_score":0.0018389225},"labels":[],"label_agreement":null},{"id":"W3032932205","doi":"10.1016/j.tsf.2020.138133","title":"Growth conditions of metal-catalyzed, laterally grown Ge films on Si","year":2020,"lang":"en","type":"article","venue":"Thin Solid Films","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":2,"is_retracted":false,"has_abstract":false,"route_ca_aff":false,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"","funders":"Natural Sciences and Engineering Research Council of Canada; McGill University","keywords":"Growth rate; Yield (engineering); Catalysis; Metal; Chemistry; Materials science; Chemical vapor deposition; Analytical Chemistry (journal); Chemical engineering; Nanotechnology; Metallurgy; Chromatography; Organic chemistry","score_opus":0.017240169760153797,"score_gpt":0.22393798336699147,"score_spread":0.20669781360683767,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3032932205","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99346995,0.0005304868,0.0014790295,0.00012658339,0.000039640698,0.00006603221,0.0015092936,0.00010960648,0.002669336],"genre_scores_gemma":[0.989916,0.00095771276,0.005492266,0.000039062103,0.000024408797,0.00013400483,0.0014614286,0.00008307437,0.0018920173],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99978584,0.000024051671,0.00002231817,0.00005706318,0.00005491869,0.0000558267],"domain_scores_gemma":[0.99984455,0.000058299935,0.00002615533,0.000019832833,0.000037691487,0.000013506075],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0002014852,0.00047789398,0.00044289976,0.00040615257,0.0005186329,0.00045570845,0.00062372466,0.000551216,0.0021141486],"category_scores_gemma":[0.00042442168,0.0003539869,0.00020219246,0.00040069758,0.00019409708,0.00035596066,0.00030636106,0.0005107878,0.0006328],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0001395568,0.00001813556,0.00020730264,0.00011223108,0.0000098966675,0.00012890509,0.000066118206,0.00026456188,0.9981184,0.00018979542,0.00017130765,0.0005737858],"study_design_scores_gemma":[0.000023928205,0.0001133588,0.0010115771,0.000009613028,0.000008607954,0.00004536538,0.00006233453,0.0010153353,0.99655545,0.000031640073,0.0011144053,0.000008539639],"about_ca_topic_score_codex":0.0035147835,"about_ca_topic_score_gemma":0.007004691,"teacher_disagreement_score":0.0035147835,"about_ca_system_score_codex":0.0004837755,"about_ca_system_score_gemma":0.00046390496,"threshold_uncertainty_score":0.0070725083},"labels":[],"label_agreement":null},{"id":"W3045298349","doi":"10.1007/s10854-020-03870-1","title":"Influence of the growth temperature on the spectral dependence of the optical functions associated with thin silicon films grown by ultra-high-vacuum evaporation on optical quality fused quartz substrates","year":2020,"lang":"en","type":"article","venue":"Journal of Materials Science Materials in Electronics","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":3,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"National Research Council Canada; University of Regina; University of British Columbia, Okanagan Campus; University of British Columbia","funders":"Natural Sciences and Engineering Research Council of Canada; Mitacs","keywords":"Refractive index; Materials science; Thin film; Molar absorptivity; Silicon; Transmittance; Optics; Fused quartz; Attenuation coefficient; Absorption (acoustics); Evaporation; Specular reflection; Optoelectronics; Quartz; Nanotechnology; Composite material","score_opus":0.009554293109051286,"score_gpt":0.21367867567120358,"score_spread":0.2041243825621523,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3045298349","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9974322,0.0003812471,0.0007758302,0.00004462842,0.000018307821,0.000004493324,0.00009983093,0.000030485327,0.001213082],"genre_scores_gemma":[0.99866545,0.00020120236,0.00042997857,0.000009725025,0.0000054592365,0.000004377213,0.00008002278,0.000028915405,0.00057489285],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998903,0.000021663316,0.000007599124,0.00002342001,0.00002759036,0.000029464327],"domain_scores_gemma":[0.9992157,0.0005161882,0.00009610828,0.000049179333,0.00008878617,0.000033967237],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0002020485,0.00020396145,0.00015795714,0.00018370924,0.00021436509,0.0003401844,0.00020980285,0.00020849348,0.0017497203],"category_scores_gemma":[0.00074558554,0.0002344689,0.00016255588,0.00014148647,0.00027520326,0.00024115552,0.00014239967,0.00034539838,0.00022058407],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00027617524,0.000012557826,0.00027095262,0.000031427797,0.000008000233,0.000048715247,0.000049169765,0.00022569892,0.9982975,0.000065759654,0.00003551472,0.00067851436],"study_design_scores_gemma":[0.0000053293297,0.000058460304,0.0022363518,0.000003325922,0.000007118989,0.000022860113,0.000023843522,0.000910629,0.9965834,0.00000918603,0.00013610887,0.000003330426],"about_ca_topic_score_codex":0.0010269617,"about_ca_topic_score_gemma":0.0013097124,"teacher_disagreement_score":0.0017497203,"about_ca_system_score_codex":0.00022156781,"about_ca_system_score_gemma":0.0001532669,"threshold_uncertainty_score":0.0058534145},"labels":[],"label_agreement":null},{"id":"W3053962818","doi":"10.11648/j.epes.20200904.11","title":"Performance Comparison of Cost Efficient Natural Dye Sensitized Solar Cell","year":2020,"lang":"en","type":"article","venue":"American Journal of Electrical Power and Energy Systems","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":4,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Calgary","funders":"","keywords":"Dye-sensitized solar cell; Materials science; Absorbance; Auxiliary electrode; Open-circuit voltage; Solar cell; Cyclic voltammetry; Fluorescence; Titanium dioxide; PEDOT:PSS; Electrode; Analytical Chemistry (journal); Optoelectronics; Chemical engineering; Layer (electronics); Nanotechnology; Electrochemistry; Chemistry; Optics; Voltage; Chromatography; Composite material","score_opus":0.005517437464787488,"score_gpt":0.19116086762022325,"score_spread":0.18564343015543575,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3053962818","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9867264,0.0040550814,0.0026107135,0.0001562119,0.00009426998,0.00002963082,0.0010003108,0.00014988206,0.005177553],"genre_scores_gemma":[0.9874763,0.002328433,0.0032289026,0.000061123224,0.00002212143,0.000032103322,0.0011790178,0.000032554315,0.0056394325],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99967206,0.00001896124,0.000023344443,0.00005235421,0.00019318177,0.000040075614],"domain_scores_gemma":[0.9998129,0.000022382228,0.000010129858,0.000012217567,0.00013182283,0.000010517788],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00014302538,0.00022967286,0.00037611063,0.00035632667,0.00022211226,0.00046949982,0.0007030935,0.0005224486,0.002793816],"category_scores_gemma":[0.00022595689,0.000090552676,0.0002574651,0.0005285479,0.00006691206,0.00062203396,0.0001804759,0.00018278598,0.0006042819],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0004912198,0.00013148188,0.0028474433,0.0005106154,0.00006984281,0.0002719542,0.000055148193,0.003025912,0.9595123,0.00053547765,0.0018130323,0.030735513],"study_design_scores_gemma":[0.000017341763,0.0004813857,0.004743745,0.000014713709,0.00006779572,0.00028100947,0.00009166447,0.0074183145,0.97880083,0.00008712618,0.007979213,0.000016821332],"about_ca_topic_score_codex":0.00093621766,"about_ca_topic_score_gemma":0.0017644865,"teacher_disagreement_score":0.002793816,"about_ca_system_score_codex":0.00046523614,"about_ca_system_score_gemma":0.0001579823,"threshold_uncertainty_score":0.009346247},"labels":[],"label_agreement":null},{"id":"W3078236581","doi":"10.1149/09807.0141ecst","title":"Flash Lamp Annealed LTPS TFTs with ITO Bottom-Gate Structures","year":2020,"lang":"en","type":"article","venue":"ECS Transactions","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Research & Development Corporation","funders":"","keywords":"Materials science; Passivation; Optoelectronics; Annealing (glass); Crystallization; Gate dielectric; Polycrystalline silicon; Thin-film transistor; PMOS logic; Electrical engineering; Nanotechnology; Metallurgy; Transistor; Voltage","score_opus":0.01019201078031501,"score_gpt":0.17614680789970918,"score_spread":0.16595479711939418,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3078236581","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9967115,0.00047677077,0.0011646103,0.00002643078,0.000018449477,0.000015716241,0.00024781152,0.000061055354,0.0012777185],"genre_scores_gemma":[0.9955557,0.00031994606,0.0022644934,0.000015470392,0.000008909692,0.000017262731,0.00031432795,0.000031101554,0.0014727978],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999151,0.000004465625,0.0000049159366,0.000021779902,0.00002907893,0.000024698556],"domain_scores_gemma":[0.99990547,0.000021560547,0.000019450545,0.000015476877,0.000024515419,0.0000135458295],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00006590347,0.00024018442,0.00028338662,0.0001485933,0.0002530046,0.00033182578,0.00028834763,0.0002584444,0.0011594937],"category_scores_gemma":[0.00023118351,0.00011534553,0.00018718567,0.000281649,0.00015667519,0.00025005464,0.000121214805,0.00026345,0.000304294],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000059847713,0.000007844631,0.00024083392,0.000041780277,0.0000049920795,0.00009188327,0.000037917285,0.00014266747,0.99820006,0.0000521308,0.00004539953,0.0010746253],"study_design_scores_gemma":[0.000010075515,0.00024519954,0.004146688,0.0000070608608,0.000024934165,0.00017331261,0.000055516204,0.0012683958,0.9922854,0.00002331381,0.0017551476,0.0000050683307],"about_ca_topic_score_codex":0.0037518903,"about_ca_topic_score_gemma":0.0032399152,"teacher_disagreement_score":0.0037518903,"about_ca_system_score_codex":0.00041325466,"about_ca_system_score_gemma":0.0001571411,"threshold_uncertainty_score":0.0074601173},"labels":[],"label_agreement":null},{"id":"W3080292565","doi":"10.1038/s41467-020-18006-6","title":"High-performance p-channel transistors with transparent Zn doped-CuI","year":2020,"lang":"en","type":"article","venue":"Nature Communications","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":164,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Samsung; Ministry of Science and ICT, South Korea; National Research Foundation of Korea; National Research Foundation","keywords":"Materials science; Optoelectronics; Thin-film transistor; Transistor; Semiconductor; Doping; Electronic circuit; Nanotechnology; Electrical engineering; Layer (electronics); Voltage","score_opus":0.024667530802448406,"score_gpt":0.22563529642960106,"score_spread":0.20096776562715266,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3080292565","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9832101,0.0013255699,0.012452745,0.000112231275,0.00008234572,0.000038984897,0.00029024007,0.0003466035,0.0021411467],"genre_scores_gemma":[0.98992425,0.0005585877,0.007943294,0.000025255498,0.000013714791,0.000018916106,0.00013391067,0.000032325202,0.0013498134],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99990225,0.0000075154603,0.000006363864,0.000028445073,0.000036769015,0.000018741861],"domain_scores_gemma":[0.9999225,0.000018729306,0.000021816486,0.0000067273213,0.000019004736,0.000011250768],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00012392225,0.00030666232,0.00017100073,0.00014226789,0.00011213505,0.0003365719,0.00034278916,0.00024545816,0.00049257005],"category_scores_gemma":[0.00026696257,0.000106932726,0.00012094486,0.00016903642,0.00018255886,0.00047414008,0.00014423153,0.00019757176,0.00024452407],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00001847533,0.0000045940687,0.000054937183,0.00003045184,0.0000022809688,0.00003686444,0.000008204619,0.00008889149,0.9990815,0.00004970702,0.00004841536,0.0005756607],"study_design_scores_gemma":[0.000007743664,0.000056985788,0.00054143753,0.0000024934775,0.000006616273,0.00004722491,0.000008045689,0.0014049488,0.9971444,0.000021683045,0.00075418607,0.0000042527145],"about_ca_topic_score_codex":0.0015054009,"about_ca_topic_score_gemma":0.0032907142,"teacher_disagreement_score":0.0015054009,"about_ca_system_score_codex":0.00036034346,"about_ca_system_score_gemma":0.0001744708,"threshold_uncertainty_score":0.002993226},"labels":[],"label_agreement":null},{"id":"W3084875988","doi":"10.1039/d0tc02655g","title":"The role of third cation doping on phase stability, carrier transport and carrier suppression in amorphous oxide semiconductors","year":2020,"lang":"en","type":"article","venue":"Journal of Materials Chemistry C","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":26,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Kootenay Association for Science & Technology","funders":"Division of Electrical, Communications and Cyber Systems; Purdue Research Foundation; National Research Foundation of Korea; Korea Research Institute of Standards and Science; Purdue University","keywords":"Materials science; Doping; Amorphous solid; Phase (matter); Semiconductor; Oxide; Electron mobility; Stability (learning theory); Charge-carrier density; Amorphous semiconductors; Optoelectronics; Chemical physics; Crystallography; Silicon; Metallurgy; Computer science; Chemistry","score_opus":0.011365133274473022,"score_gpt":0.21584892704684888,"score_spread":0.20448379377237585,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3084875988","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9986539,0.00038316715,0.00041066614,0.000030305626,0.0000053599533,0.0000017971342,0.000022858985,0.00001390298,0.00047798496],"genre_scores_gemma":[0.9994997,0.00011295922,0.00014124766,0.0000035555265,0.0000024151411,0.0000011209085,0.000014039868,0.0000046300333,0.00022048426],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999522,0.0000066520224,0.0000039064817,0.000009489442,0.000014158496,0.00001352942],"domain_scores_gemma":[0.9997876,0.000100956706,0.00004637761,0.000015085395,0.000026298156,0.000023602579],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00012950061,0.00015111842,0.00011541947,0.0001801628,0.00022896752,0.0005270821,0.00018037576,0.00019984685,0.00055032095],"category_scores_gemma":[0.0003140485,0.00010560052,0.00007832801,0.00009136705,0.00031803412,0.00027729108,0.00016343477,0.0001625858,0.00013233896],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0002434418,0.000020545958,0.0014531815,0.000022549337,0.0000039086603,0.00007164462,0.000050913553,0.0002963793,0.9949957,0.00056134665,0.000032362965,0.0022480306],"study_design_scores_gemma":[0.000010141765,0.00013350698,0.0020529497,0.000003823013,0.000009379367,0.0000855703,0.00003092679,0.0034266983,0.9937649,0.00016446889,0.0003120592,0.000005459501],"about_ca_topic_score_codex":0.0010186649,"about_ca_topic_score_gemma":0.0014983338,"teacher_disagreement_score":0.0010186649,"about_ca_system_score_codex":0.00022403261,"about_ca_system_score_gemma":0.00021187848,"threshold_uncertainty_score":0.0020254254},"labels":[],"label_agreement":null},{"id":"W3088326309","doi":"10.1149/09807.0081ecst","title":"Interpretation of Donor Activation in Boron and Argon Implanted Self-Aligned Bottom-Gate IGZO TFTs","year":2020,"lang":"en","type":"article","venue":"ECS Transactions","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":4,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Research & Development Corporation","funders":"","keywords":"Boron; Argon; Materials science; Annealing (glass); Ion implantation; Passivation; Optoelectronics; Indium; Shallow donor; Fabrication; Nanotechnology; Ion; Metallurgy; Chemistry; Layer (electronics)","score_opus":0.0067955033535392105,"score_gpt":0.19153072433451696,"score_spread":0.18473522098097775,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3088326309","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9901794,0.00028374346,0.007708043,0.000035798355,0.000011502431,0.000010358751,0.00008165337,0.000056516074,0.0016329758],"genre_scores_gemma":[0.9979826,0.00010948303,0.0014309024,0.000012318743,0.0000026334262,0.0000041374055,0.0000433683,0.0000074345994,0.00040710848],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99995184,0.0000039688916,0.000002225334,0.000011581917,0.000017442084,0.000012965256],"domain_scores_gemma":[0.9999522,0.00001854604,0.000010554453,0.0000065069075,0.000007932931,0.0000041113844],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00008310316,0.00012393395,0.0001357862,0.00018943596,0.00013754009,0.00021473045,0.00027262702,0.00021101137,0.00068520266],"category_scores_gemma":[0.00011243999,0.000063255975,0.00014504607,0.00010251146,0.00023935597,0.00018714766,0.00010413277,0.00016230388,0.000075367345],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00009402701,0.0000036129961,0.0007194463,0.000028185703,0.0000031447905,0.00014786966,0.00006334016,0.00026941512,0.9971872,0.00030239118,0.000011924771,0.0011694705],"study_design_scores_gemma":[0.0000067154997,0.00009584808,0.00772337,0.0000037255923,0.000013514779,0.00025016358,0.00011567948,0.0035520622,0.9870503,0.00031198276,0.0008719002,0.0000047904387],"about_ca_topic_score_codex":0.0004240832,"about_ca_topic_score_gemma":0.0006586378,"teacher_disagreement_score":0.00068520266,"about_ca_system_score_codex":0.00021346296,"about_ca_system_score_gemma":0.000091013135,"threshold_uncertainty_score":0.0022922754},"labels":[],"label_agreement":null},{"id":"W3088991518","doi":"10.1149/ma2020-02281933mtgabs","title":"Effect of Glass Substrate on the Film Properties of Poly Silicon by Excimer Laser Annealing","year":2020,"lang":"en","type":"article","venue":"ECS Meeting Abstracts","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Research & Development Corporation","funders":"","keywords":"Materials science; Silicon; Composite material; Excimer laser; Amorphous solid; Residual stress; Amorphous silicon; Polycrystalline silicon; Thin film; Surface roughness; Nanocrystalline silicon; Thin-film transistor; Layer (electronics); Crystalline silicon; Optics; Optoelectronics; Laser; Crystallography; Nanotechnology","score_opus":0.014790469572662295,"score_gpt":0.19979458961584123,"score_spread":0.18500412004317893,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3088991518","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9975593,0.0008214988,0.0006725191,0.000028809678,0.000016259082,0.000010138362,0.00010709476,0.00003602041,0.00074826926],"genre_scores_gemma":[0.9980166,0.00042611768,0.0006719694,0.000016451251,0.0000043967866,0.000007753233,0.00012656636,0.000031891705,0.00069826003],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99988174,0.000009920223,0.0000094664665,0.000030114623,0.00003507846,0.000033706936],"domain_scores_gemma":[0.9998166,0.000082243125,0.000040213457,0.000021979646,0.000027299984,0.000011771052],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00009628963,0.0002633184,0.00021076004,0.00008907787,0.00015252235,0.00032447177,0.00013213405,0.00017487418,0.0016381674],"category_scores_gemma":[0.0002536478,0.00018690263,0.00015052319,0.00012962935,0.00012890776,0.00020679086,0.00011065686,0.00023054321,0.0002371785],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000053033426,0.0000056715207,0.00022246734,0.000030280336,0.000006298983,0.000036284946,0.0000245104,0.000116578056,0.9986583,0.000011465793,0.00001694326,0.0008181778],"study_design_scores_gemma":[0.0000032562589,0.00010700352,0.0039120466,0.0000023429047,0.000010444024,0.000032722393,0.000020164855,0.0005219607,0.9950551,0.000004314574,0.00032768477,0.0000030278438],"about_ca_topic_score_codex":0.00096220605,"about_ca_topic_score_gemma":0.0019805725,"teacher_disagreement_score":0.0016381674,"about_ca_system_score_codex":0.00019515317,"about_ca_system_score_gemma":0.00011078472,"threshold_uncertainty_score":0.00548023},"labels":[],"label_agreement":null},{"id":"W3112926552","doi":"10.1109/ted.2020.3038623","title":"Low-Temperature Self-Aligned-Silicide-Capable Transistor Process Using Solid-Phase-Epitaxy and Lift-Off for Hybrid Substrates","year":2020,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Materials science; Optoelectronics; Plasma-enhanced chemical vapor deposition; Silicon; Transistor; Amorphous solid; Epitaxy; Electron mobility; Fabrication; Bilayer; Nanotechnology; Voltage; Electrical engineering; Layer (electronics); Chemistry; Crystallography","score_opus":0.011842196968918561,"score_gpt":0.26324409847316266,"score_spread":0.2514019015042441,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3112926552","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.89532274,0.001619445,0.09030254,0.0002419705,0.00024808507,0.00032192766,0.00087534764,0.0011358395,0.0099321455],"genre_scores_gemma":[0.89020157,0.0008271536,0.10179765,0.000071259245,0.00004819049,0.00029278573,0.0006482053,0.00012566548,0.005987477],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999249,0.000003441553,0.0000042098845,0.00001478906,0.000041949734,0.000010733586],"domain_scores_gemma":[0.9999465,0.0000119577435,0.000013404087,0.000010349059,0.00000999287,0.000007859974],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00007411475,0.00032521377,0.00033446477,0.0001978368,0.00023336135,0.0002758645,0.0005057725,0.00026753024,0.0010352377],"category_scores_gemma":[0.00008588247,0.00020166492,0.00024998313,0.00018737798,0.00017805539,0.0002143138,0.00033938914,0.0005222888,0.0007250047],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0000071121967,0.000007589531,0.00005053782,0.000027619883,0.0000030281742,0.00006695307,0.000010924256,0.00007517979,0.99835664,0.00023089793,0.00007671429,0.0010867836],"study_design_scores_gemma":[0.000013315964,0.000108496104,0.0011038991,0.0000063965804,0.000010154946,0.00052192184,0.000011486733,0.0022617609,0.9917292,0.0001122856,0.004111781,0.00000927807],"about_ca_topic_score_codex":0.00038190724,"about_ca_topic_score_gemma":0.001372687,"teacher_disagreement_score":0.0010352377,"about_ca_system_score_codex":0.00020937363,"about_ca_system_score_gemma":0.00035823422,"threshold_uncertainty_score":0.0034632087},"labels":[],"label_agreement":null},{"id":"W3113406229","doi":"10.1007/s10854-020-04789-3","title":"A single-oscillator long-wave-length limit Sellmeier equation based fitting approach applied to the case of thin-film silicon and some of its more common alloys","year":2021,"lang":"en","type":"article","venue":"Journal of Materials Science Materials in Electronics","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of British Columbia, Okanagan Campus; University of British Columbia","funders":"Natural Sciences and Engineering Research Council of Canada; Mitacs","keywords":"Refractive index; Limit (mathematics); Cauchy distribution; Mathematics; Mathematical analysis; Optics; Silicon; Physics; Optoelectronics","score_opus":0.022053358716543372,"score_gpt":0.2293912331609105,"score_spread":0.20733787444436713,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3113406229","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.018164266,0.0004050667,0.9689956,0.00017831495,0.00005859491,0.00007656667,0.00012574471,0.00046477368,0.011531048],"genre_scores_gemma":[0.39276168,0.0022820148,0.5425948,0.0002845814,0.000086161774,0.00026075536,0.00046696072,0.0010150135,0.060248025],"study_design_codex":"theoretical_or_conceptual","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99977547,0.00004487877,0.0000135148175,0.00003732707,0.00010978278,0.00001908279],"domain_scores_gemma":[0.99977046,0.000081175705,0.000023513385,0.000047537364,0.00006972217,0.0000076020474],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00076255726,0.00065897877,0.0006098746,0.0007144187,0.0006815432,0.0010946378,0.00200866,0.0011892448,0.0037377703],"category_scores_gemma":[0.0013293643,0.0004215534,0.00091577304,0.0005953636,0.00043948856,0.0017685596,0.00063072954,0.0012068225,0.0019896424],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000101502,0.00025099402,0.0016455561,0.0006101782,0.00018099337,0.0011521071,0.00091276906,0.32163534,0.1853833,0.36062872,0.005180795,0.12231779],"study_design_scores_gemma":[0.000005022834,0.000020043091,0.0003211268,0.00002652818,0.000024738943,0.00023095336,0.00004806905,0.95136,0.011408394,0.031702023,0.0048227427,0.000030359708],"about_ca_topic_score_codex":0.001692351,"about_ca_topic_score_gemma":0.002722509,"teacher_disagreement_score":0.0037377703,"about_ca_system_score_codex":0.00048279198,"about_ca_system_score_gemma":0.0006393541,"threshold_uncertainty_score":0.012504101},"labels":[],"label_agreement":null},{"id":"W3129976553","doi":"10.1002/sdtp.14378","title":"10.2: <i>Invited Paper:</i> Independent Device Optimization for RGB with Self‐assembled Cathode Patterning","year":2021,"lang":"en","type":"article","venue":"SID Symposium Digest of Technical Papers","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"OTI Lumionics (Canada)","funders":"","keywords":"Library science; Computer science; Art history; Art","score_opus":0.006764842004204576,"score_gpt":0.19879677636106838,"score_spread":0.1920319343568638,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3129976553","genre_codex":"other","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.3572846,0.024036506,0.07247243,0.06074366,0.08127693,0.0009884798,0.005320279,0.0050368765,0.39284033],"genre_scores_gemma":[0.46383062,0.00816322,0.03793903,0.0066944975,0.005956935,0.0002857418,0.0024797483,0.002763169,0.47188702],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9997266,0.000020644375,0.000006003543,0.000050083207,0.00013739987,0.00005926618],"domain_scores_gemma":[0.99983215,0.000029397386,0.000009460321,0.000017455188,0.00007922373,0.00003233728],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00039836895,0.00045302915,0.00036812943,0.00027368148,0.00063872465,0.0015343743,0.00084462273,0.0012404096,0.015846113],"category_scores_gemma":[0.00045979148,0.00021496683,0.00041166635,0.00024859174,0.00031337197,0.0007400767,0.00052075327,0.00092349376,0.0049179345],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0006759929,0.00015994313,0.0006583466,0.000594398,0.000051262476,0.0006844615,0.00022561493,0.0012225729,0.58664876,0.0077345,0.3614351,0.039909013],"study_design_scores_gemma":[0.00007148749,0.00038254372,0.0020192866,0.000055328506,0.000042873657,0.00041345565,0.00011685051,0.0065150373,0.7063154,0.0012288279,0.2827673,0.00007163545],"about_ca_topic_score_codex":0.001232101,"about_ca_topic_score_gemma":0.0039844075,"teacher_disagreement_score":0.015846113,"about_ca_system_score_codex":0.0010210377,"about_ca_system_score_gemma":0.00046926067,"threshold_uncertainty_score":0.053010523},"labels":[],"label_agreement":null},{"id":"W3130507024","doi":"10.11159/ijtan.2021.001","title":"Effects of Hydrogen Concentration and Cooling Speed on Fabrication of Hydrogenated Amorphous Silicon: Quantum Simulation","year":2021,"lang":"en","type":"article","venue":"International Journal of Theoretical and Applied Nanotechnology","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":3,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":false,"route_ca_venue":true,"route_about_ca":false,"ca_institutions":"","funders":"","keywords":"Fabrication; Amorphous silicon; Materials science; Amorphous solid; Silicon; Hydrogen; Optoelectronics; Engineering physics; Crystalline silicon; Chemistry; Engineering; Crystallography; Organic chemistry","score_opus":0.004394362557018229,"score_gpt":0.2128186986553701,"score_spread":0.20842433609835187,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3130507024","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9870127,0.00019476945,0.008488135,0.00011613734,0.000026491358,0.000031902124,0.0002592456,0.00007989077,0.0037906591],"genre_scores_gemma":[0.99358505,0.00015643424,0.0056030923,0.00002201422,0.0000029560874,0.000039711358,0.00013260811,0.000024950661,0.00043315574],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9998847,0.000022731669,0.000004386299,0.000017926155,0.000037453214,0.00003274325],"domain_scores_gemma":[0.9995472,0.00028452647,0.0000361227,0.00003443527,0.00007743305,0.000020251078],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0004279536,0.0002611378,0.0004581598,0.00025412708,0.00051545235,0.00036659182,0.0006000392,0.0005121056,0.0016207341],"category_scores_gemma":[0.0010832032,0.0003020499,0.00039632613,0.0003779374,0.00036976303,0.00050394767,0.00021047387,0.00039211148,0.00009041963],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00013290952,0.00008743043,0.0021572667,0.000118400945,0.000032743104,0.000100603414,0.000078506186,0.9712823,0.02015188,0.0023159427,0.00020460384,0.0033373896],"study_design_scores_gemma":[0.000019919302,0.000100625235,0.00091278926,0.000008856139,0.000014685318,0.000009807285,0.000039111845,0.9848663,0.013269162,0.00038735388,0.00035948335,0.00001180415],"about_ca_topic_score_codex":0.00842165,"about_ca_topic_score_gemma":0.0060713356,"teacher_disagreement_score":0.00842165,"about_ca_system_score_codex":0.0007349096,"about_ca_system_score_gemma":0.0007275437,"threshold_uncertainty_score":0.01674527},"labels":[],"label_agreement":null},{"id":"W3133470105","doi":"10.1557/proc-762-a21.6","title":"Enhanced Blue Sensitivity in ITO/a-SiN<sub>x</sub>:H/a-Si:H MIS Photodetectors","year":2003,"lang":"en","type":"article","venue":"MRS Proceedings","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Materials science; Dark current; Optoelectronics; Photodetector; Photodiode; Schottky barrier; Thin film; Substrate (aquarium); Plasma-enhanced chemical vapor deposition; Analytical Chemistry (journal); Sputtering; Chemical vapor deposition; Band gap; Nanotechnology","score_opus":0.006478299121329732,"score_gpt":0.17968681491962435,"score_spread":0.1732085157982946,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3133470105","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.989456,0.0012249089,0.004062741,0.00014970444,0.00007394515,0.0000140585435,0.00019280761,0.00043358095,0.004392147],"genre_scores_gemma":[0.99189514,0.00040925894,0.0028684058,0.00007890997,0.000030741132,0.000008881861,0.00005710387,0.000054423246,0.00459722],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998311,0.000023467182,0.000006760663,0.00004436236,0.0000624215,0.000031791882],"domain_scores_gemma":[0.999757,0.000097689735,0.000029098022,0.000022340886,0.0000678575,0.000026132648],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0001595388,0.00035703686,0.0003196217,0.00023414989,0.00022422131,0.0006127128,0.0003985486,0.0005011514,0.0016170086],"category_scores_gemma":[0.00032391757,0.00028533643,0.00011730406,0.00020370162,0.0002700826,0.00039170892,0.00027839144,0.00025014288,0.0005695226],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00017600246,0.000009124624,0.00042442835,0.000033342607,0.000005644042,0.00008004458,0.000044000615,0.00011784432,0.9967327,0.00021808688,0.00014869154,0.0020100877],"study_design_scores_gemma":[0.0000074876284,0.000058727062,0.0019494909,0.0000035651249,0.0000079186175,0.00010301909,0.000022758915,0.001276186,0.9956333,0.00006496551,0.00086836895,0.000004222972],"about_ca_topic_score_codex":0.0006075757,"about_ca_topic_score_gemma":0.0012128887,"teacher_disagreement_score":0.0016170086,"about_ca_system_score_codex":0.00032408928,"about_ca_system_score_gemma":0.00012763291,"threshold_uncertainty_score":0.005409479},"labels":[],"label_agreement":null},{"id":"W3135356194","doi":"10.1016/j.jnoncrysol.2021.120657","title":"Crystallinity, order, the thin-film silicon continuum, and the spectral dependence of the refractive index in thin silicon films grown through ultra-high-vacuum evaporation for a range of growth temperatures","year":2021,"lang":"en","type":"article","venue":"Journal of Non-Crystalline Solids","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":3,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"National Research Council Canada; University of British Columbia, Okanagan Campus; University of British Columbia","funders":"Natural Sciences and Engineering Research Council of Canada; Mitacs","keywords":"Raman spectroscopy; Thin film; Refractive index; Silicon; Materials science; Optics; Vacuum evaporation; Crystalline silicon; Optoelectronics; Nanotechnology; Physics","score_opus":0.009040623923146028,"score_gpt":0.23430893063736863,"score_spread":0.2252683067142226,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3135356194","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9971963,0.00047939533,0.000529042,0.000029566534,0.0000068962354,0.0000034344175,0.00016905191,0.000030775598,0.0015555973],"genre_scores_gemma":[0.99807173,0.0002667455,0.00039626175,0.000008812248,0.00000336324,0.000005415293,0.00021206816,0.000025936182,0.0010096353],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99992025,0.000007750439,0.0000054319544,0.000014381961,0.00003394146,0.000018149838],"domain_scores_gemma":[0.9995975,0.00021170135,0.00007107376,0.00002525773,0.00006628412,0.000028352486],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00013306452,0.00018126075,0.00013155775,0.0004241121,0.00020453772,0.00032431682,0.000218053,0.00016315794,0.0013474091],"category_scores_gemma":[0.0004171336,0.00026734234,0.00012772385,0.00022119252,0.00026124236,0.00028211312,0.00012900478,0.00039901832,0.0002270646],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00014941281,0.000017925648,0.0011037185,0.000026248723,0.000007874639,0.000052166484,0.000064590364,0.00036439789,0.99715674,0.0001630611,0.00004648526,0.00084745936],"study_design_scores_gemma":[0.000007426533,0.00007070324,0.012435212,0.0000074601658,0.000010165418,0.00007250089,0.00006162431,0.0033903476,0.9836707,0.00007560239,0.00019214606,0.0000061428414],"about_ca_topic_score_codex":0.0021252432,"about_ca_topic_score_gemma":0.004230388,"teacher_disagreement_score":0.0021252432,"about_ca_system_score_codex":0.00027145856,"about_ca_system_score_gemma":0.00019809503,"threshold_uncertainty_score":0.0045076013},"labels":[],"label_agreement":null},{"id":"W3136517886","doi":"10.1049/ote2.12036","title":"Absorption enhanced thin‐film solar cells using fractal nano‐structures","year":2021,"lang":"en","type":"article","venue":"IET Optoelectronics","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":22,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Materials science; Surface plasmon; Fractal; Wavelength; Optoelectronics; Optics; Surface plasmon polariton; Absorption (acoustics); Solar cell; Plasmon; Silicon; Absorptance; Plasmonic solar cell; Ray; Nano-; Short circuit; Thin film; Nanotechnology; Monocrystalline silicon; Physics; Reflectivity","score_opus":0.007235190183876841,"score_gpt":0.21098671963281115,"score_spread":0.20375152944893432,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3136517886","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.97134787,0.00090190495,0.020615013,0.00010302922,0.000093271345,0.000016601325,0.00006150741,0.00025891734,0.006602],"genre_scores_gemma":[0.98431075,0.0002419692,0.014054082,0.000027444848,0.00001127108,0.000009859221,0.00003599258,0.000012385779,0.0012962645],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999571,0.000004148672,0.000002058414,0.000008116991,0.00002081482,0.000007806987],"domain_scores_gemma":[0.9999076,0.000022202063,0.00001944684,0.000013308788,0.000027687787,0.000009814258],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00004411719,0.00014292162,0.00019478546,0.00019777795,0.00011507648,0.00031159134,0.00025489848,0.00029997705,0.00045154666],"category_scores_gemma":[0.0001404315,0.00014843569,0.00020520168,0.00013475369,0.00018229497,0.00019277558,0.0001547464,0.00022047915,0.0002079957],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000017747301,0.000013387555,0.00009630871,0.00003414507,0.000008935418,0.00006717906,0.000017485958,0.0029621623,0.99334913,0.0007829241,0.000109965025,0.0025406363],"study_design_scores_gemma":[0.000043637265,0.00026800038,0.0014062546,0.000017556786,0.000029771028,0.0004760958,0.00002630127,0.081749946,0.90906614,0.00080908614,0.0060806735,0.00002643011],"about_ca_topic_score_codex":0.00031276667,"about_ca_topic_score_gemma":0.000551996,"teacher_disagreement_score":0.00045154666,"about_ca_system_score_codex":0.00026781048,"about_ca_system_score_gemma":0.00008350074,"threshold_uncertainty_score":0.0019430518},"labels":[],"label_agreement":null},{"id":"W3146399053","doi":"","title":"Organic thin film transistors for flexible-substrate displays","year":2000,"lang":"en","type":"article","venue":"International Display Research Conference","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":2,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Infineon Technologies (Canada)","funders":"","keywords":"Thin-film transistor; Optoelectronics; Substrate (aquarium); Materials science; Transistor; Flexible display; Computer science; Electrical engineering; Nanotechnology; Engineering; Geology; Voltage","score_opus":0.05513575463010185,"score_gpt":0.3215239197117988,"score_spread":0.26638816508169694,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3146399053","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.53049064,0.10932814,0.15884615,0.0062521375,0.010893519,0.0008493026,0.0031322981,0.0044397675,0.17576797],"genre_scores_gemma":[0.76112807,0.03698598,0.08441418,0.00092455576,0.0014845621,0.00027739158,0.0015558068,0.00039224542,0.11283711],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99986804,0.000009054352,0.000005950097,0.000017355622,0.00006833544,0.00003127449],"domain_scores_gemma":[0.99988604,0.000027634429,0.000012762898,0.0000118705575,0.000042643405,0.000019076204],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00018135602,0.00041771636,0.00029427823,0.0006371897,0.00046198993,0.0011599073,0.00083841034,0.00059690455,0.00800569],"category_scores_gemma":[0.0003554015,0.00037247734,0.0002359929,0.0006201099,0.00025489242,0.0010192547,0.00047001278,0.00078721344,0.0015894453],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00009941426,0.00006813986,0.00024724714,0.00045081336,0.000026504817,0.00025939514,0.00006635466,0.000564927,0.932437,0.009577884,0.0076549957,0.048547454],"study_design_scores_gemma":[0.00006733297,0.00037219978,0.0024500191,0.000135178,0.000088829445,0.0004384707,0.000115440955,0.009542245,0.8515901,0.0033135326,0.13184126,0.00004547972],"about_ca_topic_score_codex":0.0009341915,"about_ca_topic_score_gemma":0.0034975652,"teacher_disagreement_score":0.00800569,"about_ca_system_score_codex":0.0005098114,"about_ca_system_score_gemma":0.00029169273,"threshold_uncertainty_score":0.026781678},"labels":[],"label_agreement":null},{"id":"W3147855248","doi":"10.1109/esscir.2006.307533","title":"Circuit Techniques for Organic and Amorphous Semiconductor based Field Effect Transistors","year":2006,"lang":"en","type":"article","venue":"Proceedings of ESSCIRC","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":4,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Materials science; Thin-film transistor; Organic semiconductor; Optoelectronics; Amorphous silicon; Transistor; Threshold voltage; Semiconductor; Amorphous solid; Field-effect transistor; Silicon; Voltage; Engineering physics; Electrical engineering; Nanotechnology; Crystalline silicon; Engineering","score_opus":0.005026867641604254,"score_gpt":0.17806561415794553,"score_spread":0.17303874651634127,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3147855248","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.017720666,0.0064024944,0.90970606,0.0010907011,0.0008454626,0.00045239943,0.00034452608,0.0018584521,0.061579283],"genre_scores_gemma":[0.3350631,0.009211576,0.5933691,0.0012702683,0.0005206712,0.00081652496,0.0004576291,0.00024470754,0.059046388],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99980456,0.000020498039,0.00000909549,0.000027704265,0.000117336844,0.000020982676],"domain_scores_gemma":[0.99989176,0.000040738498,0.000014329472,0.000016798478,0.000031048305,0.000005371149],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00014489498,0.0003288629,0.0001613669,0.00042057422,0.00033674375,0.0005990138,0.0008655657,0.00051834225,0.011611034],"category_scores_gemma":[0.0005164561,0.00016678536,0.00021526158,0.0003768681,0.00024340917,0.0010119457,0.00034200624,0.0006366273,0.0025097667],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00010510218,0.00011312202,0.00021294087,0.00089750387,0.000040745177,0.00040677836,0.00034217554,0.004313831,0.46134472,0.1732206,0.012001653,0.34700087],"study_design_scores_gemma":[0.000119948694,0.0005803298,0.0008830619,0.00030690528,0.000087355125,0.0023353235,0.00018963976,0.062243376,0.34516987,0.0565622,0.5314627,0.000059379647],"about_ca_topic_score_codex":0.00027864476,"about_ca_topic_score_gemma":0.0008243635,"teacher_disagreement_score":0.011611034,"about_ca_system_score_codex":0.00031819605,"about_ca_system_score_gemma":0.00021965287,"threshold_uncertainty_score":0.038842797},"labels":[],"label_agreement":null},{"id":"W3150008758","doi":"","title":"13.5-inch quarter-HD flexible AMOLED with crystalline oxide FET","year":2012,"lang":"en","type":"article","venue":"International Workshop on Active-Matrix Flatpanel Displays and Devices","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":false,"route_ca_aff":false,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":true,"ca_institutions":"","funders":"","keywords":"AMOLED; Materials science; Optoelectronics; Quarter (Canadian coin); Oxide; Electrical engineering; Nanotechnology; Engineering; Active matrix; Thin-film transistor; Layer (electronics); Metallurgy","score_opus":0.010864018709603789,"score_gpt":0.2487505116491642,"score_spread":0.2378864929395604,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3150008758","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.8858199,0.0009840832,0.04221912,0.0006027864,0.0007353841,0.00008924055,0.0030352494,0.004953799,0.06156053],"genre_scores_gemma":[0.9509187,0.0001941717,0.0150806885,0.00012715062,0.000044814664,0.0000319079,0.0007873387,0.0001487899,0.03266648],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999373,0.0000029506582,0.0000023881582,0.000019658819,0.000021992826,0.000015710684],"domain_scores_gemma":[0.9999256,0.000014500202,0.0000066024227,0.000016965165,0.000022970225,0.000013381826],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00008257768,0.00015688807,0.0002074459,0.00016977056,0.00026513828,0.00035039283,0.0006867007,0.000385536,0.00798037],"category_scores_gemma":[0.0001263321,0.00011126579,0.00019030442,0.00018249724,0.0000861355,0.00037485742,0.00028830697,0.0002222756,0.0013316066],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0003788758,0.00012502365,0.0018042224,0.00017967368,0.000038585524,0.000762707,0.00020235963,0.0013917215,0.9229602,0.00276784,0.017234072,0.052154582],"study_design_scores_gemma":[0.000112809365,0.0016008944,0.022232996,0.00008165639,0.0000935781,0.0022653309,0.00035894872,0.05072151,0.7866642,0.0013378436,0.13440391,0.00012630291],"about_ca_topic_score_codex":0.0013284385,"about_ca_topic_score_gemma":0.003562751,"teacher_disagreement_score":0.00798037,"about_ca_system_score_codex":0.00030581246,"about_ca_system_score_gemma":0.00016056112,"threshold_uncertainty_score":0.02669704},"labels":[],"label_agreement":null},{"id":"W3153894950","doi":"","title":"Electrical characteristics of SI-doped IGZO TFTs fabricated using ion implantation","year":2016,"lang":"en","type":"article","venue":"","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Hatch (Canada)","funders":"","keywords":"Materials science; Doping; Ion implantation; Optoelectronics; Ion; Thin-film transistor; Nanotechnology; Chemistry; Layer (electronics)","score_opus":0.014846848731362524,"score_gpt":0.21735996837458652,"score_spread":0.202513119643224,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3153894950","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99652267,0.0004355376,0.0009156966,0.00013744169,0.00007708119,0.000009795858,0.00049312675,0.00008092582,0.0013277796],"genre_scores_gemma":[0.99705935,0.0002450723,0.0005725891,0.000051058625,0.000026311243,0.000011081742,0.00032271337,0.000020763171,0.0016911915],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99978155,0.00001454151,0.000014187017,0.000059025984,0.000053634147,0.00007711894],"domain_scores_gemma":[0.99943393,0.00022472316,0.000102738006,0.00004793278,0.00013684292,0.00005374876],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00020091276,0.0003399236,0.00039880705,0.00032148894,0.00037346955,0.00051875866,0.0005461979,0.0008323602,0.0029460043],"category_scores_gemma":[0.00060721935,0.00017259164,0.00023982629,0.00056855095,0.00042262085,0.0005838369,0.00016556593,0.0004353543,0.000398096],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00066596986,0.00004588636,0.001624468,0.00012913173,0.00004047307,0.00035313543,0.00028333857,0.00057810993,0.9928154,0.00026977682,0.00043208507,0.0027622792],"study_design_scores_gemma":[0.00009825841,0.0012949113,0.027621849,0.000058877147,0.00012408324,0.0004848599,0.00047629786,0.0064921845,0.9604839,0.00019653398,0.0026318056,0.000036387144],"about_ca_topic_score_codex":0.0027537437,"about_ca_topic_score_gemma":0.0041318936,"teacher_disagreement_score":0.0029460043,"about_ca_system_score_codex":0.0005600431,"about_ca_system_score_gemma":0.00031236498,"threshold_uncertainty_score":0.00985533},"labels":[],"label_agreement":null},{"id":"W3154062942","doi":"10.1109/led.2021.3072000","title":"Low-Frequency Noise Characteristics of Inkjet-Printed Electrolyte-Gated Thin-Film Transistors","year":2021,"lang":"en","type":"article","venue":"IEEE Electron Device Letters","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":3,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Ministerium für Wissenschaft, Forschung und Kunst Baden-Württemberg; Bundesministerium für Bildung und Forschung","keywords":"Transistor; Materials science; Thin-film transistor; Noise (video); Optoelectronics; Flicker noise; Capacitance; Gate dielectric; Electrical engineering; Nanotechnology; Voltage; Noise figure; Computer science; Electrode; Layer (electronics); Physics; CMOS; Engineering","score_opus":0.006465278390795418,"score_gpt":0.19689976852289473,"score_spread":0.19043449013209932,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3154062942","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9885028,0.00084574096,0.00842817,0.00007941493,0.000056303204,0.000012864496,0.0002760028,0.00022595307,0.0015726415],"genre_scores_gemma":[0.99632806,0.0002543305,0.0021280975,0.000029015926,0.0000117299805,0.000010054678,0.0001243837,0.000024386789,0.0010899024],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99972206,0.000017208687,0.000015731546,0.000063008505,0.00015768818,0.000024260504],"domain_scores_gemma":[0.9995165,0.00024631037,0.00008122988,0.00003483978,0.00010289642,0.00001813514],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00013956419,0.00023953241,0.00026643087,0.00039056755,0.00012187776,0.0003376398,0.00041337995,0.0004427267,0.0008488573],"category_scores_gemma":[0.0008099661,0.00010486078,0.0001630965,0.00039555389,0.00026364296,0.0002872586,0.00010356406,0.00023078381,0.00023268661],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00013597657,0.00002726933,0.0014606622,0.000076798926,0.00002079045,0.00037601127,0.00011902862,0.002349048,0.98853123,0.00019121678,0.000119779485,0.0065921713],"study_design_scores_gemma":[0.000014897103,0.00031351444,0.00923912,0.00002386142,0.000033752265,0.00045996348,0.00008793614,0.033171438,0.95528656,0.00026310704,0.0010795415,0.000026362457],"about_ca_topic_score_codex":0.00044373845,"about_ca_topic_score_gemma":0.0004710444,"teacher_disagreement_score":0.0008488573,"about_ca_system_score_codex":0.00027456746,"about_ca_system_score_gemma":0.00008183898,"threshold_uncertainty_score":0.002839744},"labels":[],"label_agreement":null},{"id":"W3156392352","doi":"10.24908/iqurcp.9966","title":"Disordered Photonic Crystal Slabs for Thin-Film Photovoltaics","year":2018,"lang":"en","type":"article","venue":"Inquiry Queen s Undergraduate Research Conference Proceedings","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":false,"route_ca_venue":true,"route_about_ca":false,"ca_institutions":"","funders":"","keywords":"Photonic crystal; Materials science; Photovoltaics; Optoelectronics; Silicon; Amorphous silicon; Absorption (acoustics); Photonics; Amorphous solid; Band gap; Layer (electronics); Monocrystalline silicon; Solar cell; Photovoltaic system; Thin film; Crystal (programming language); Optics; Crystalline silicon; Nanotechnology; Composite material; Chemistry; Computer science; Physics","score_opus":0.06736103014606454,"score_gpt":0.3267619393618107,"score_spread":0.25940090921574616,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3156392352","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.7635937,0.040917616,0.11587205,0.0025762473,0.0011558234,0.0003904779,0.001400875,0.001194312,0.07289887],"genre_scores_gemma":[0.8786606,0.0105164545,0.10156815,0.0002610829,0.00007087219,0.00020530364,0.00049300864,0.00012125121,0.008103235],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999099,0.000012152187,0.0000032362332,0.000013254353,0.000052108662,0.000009438039],"domain_scores_gemma":[0.9998863,0.000040235253,0.000016582804,0.000014395194,0.000030477182,0.000011966379],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00013899617,0.00023056606,0.0001962455,0.00024360396,0.00039497606,0.00040576173,0.00032046688,0.00030454042,0.001703488],"category_scores_gemma":[0.00023498543,0.00019352476,0.00015703864,0.0002839172,0.00025346357,0.00026948506,0.0002467793,0.0007412908,0.00047303585],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000061106926,0.00008373686,0.00029100844,0.00042858286,0.000013455839,0.0001244949,0.00006367424,0.0038395836,0.94964164,0.03013597,0.0020595985,0.013257185],"study_design_scores_gemma":[0.00005803203,0.00026092574,0.0008206952,0.00009575852,0.000031839016,0.00025483544,0.000079849466,0.05397698,0.8954051,0.0077245324,0.04125427,0.000037200018],"about_ca_topic_score_codex":0.0019508065,"about_ca_topic_score_gemma":0.0054118056,"teacher_disagreement_score":0.0019508065,"about_ca_system_score_codex":0.00075478636,"about_ca_system_score_gemma":0.0004972822,"threshold_uncertainty_score":0.0056988},"labels":[],"label_agreement":null},{"id":"W3172601086","doi":"10.1007/s10854-021-05473-w","title":"Thin-film optical function acquisition from experimental measurements of the reflectance and transmittance spectra: a case study","year":2021,"lang":"en","type":"article","venue":"Journal of Materials Science Materials in Electronics","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"National Research Council Canada; University of British Columbia, Okanagan Campus; University of British Columbia","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Thin film; Transmittance; Materials science; Substrate (aquarium); Optics; Deposition (geology); Spectral line; Optoelectronics; Evaporation; Physics; Nanotechnology","score_opus":0.017889154122931083,"score_gpt":0.2526135424163142,"score_spread":0.2347243882933831,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3172601086","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.76536286,0.0010919437,0.21702185,0.00058990414,0.000053576754,0.00030106105,0.00081285596,0.0021607387,0.012605197],"genre_scores_gemma":[0.8578091,0.00057607976,0.13774487,0.00005409844,0.00002167148,0.000050381695,0.00036543238,0.00028230686,0.003096033],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99932027,0.00013169242,0.000044056153,0.00010156991,0.00035320074,0.000049174254],"domain_scores_gemma":[0.9972452,0.001315019,0.00022061638,0.00043936732,0.0007195958,0.000060201794],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0013525236,0.0005302775,0.00038480677,0.0007334216,0.000589377,0.0013392142,0.0012740241,0.001371752,0.002147696],"category_scores_gemma":[0.0031534832,0.000350825,0.000461301,0.00081214256,0.0005392251,0.0010153146,0.0006381989,0.0006839409,0.0009401727],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0011843719,0.0010609055,0.029738229,0.001572805,0.00011687463,0.015950847,0.0029667043,0.02606787,0.50613606,0.006092259,0.004457898,0.4046552],"study_design_scores_gemma":[0.00006225708,0.00052160834,0.026955236,0.00019263028,0.00012346102,0.012831075,0.0016049913,0.23030925,0.70749736,0.0032147632,0.016562166,0.00012527365],"about_ca_topic_score_codex":0.002631066,"about_ca_topic_score_gemma":0.0037905122,"teacher_disagreement_score":0.002631066,"about_ca_system_score_codex":0.0004972419,"about_ca_system_score_gemma":0.00047542265,"threshold_uncertainty_score":0.0071848035},"labels":[],"label_agreement":null},{"id":"W3176297968","doi":"10.1002/sdtp.14670","title":"23‐3: Self‐Assembled Cathode Patterning for Micro‐Welding in Top‐Emission AMOLED Displays to Reduce IR Drop","year":2021,"lang":"en","type":"article","venue":"SID Symposium Digest of Technical Papers","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":2,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"OTI Lumionics (Canada)","funders":"","keywords":"AMOLED; Cathode; Materials science; Optoelectronics; Drop (telecommunication); Backplane; Electrode; Nanotechnology; Electrical engineering; Active matrix; Engineering; Chemistry; Thin-film transistor; Layer (electronics)","score_opus":0.008400191067856359,"score_gpt":0.23982346576068322,"score_spread":0.23142327469282686,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3176297968","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.90978616,0.0012020593,0.05266823,0.0003441259,0.00038289028,0.00014675676,0.00047026883,0.0017666256,0.03323285],"genre_scores_gemma":[0.918064,0.0006661667,0.03777727,0.00013091107,0.000047840887,0.00011951356,0.0004054413,0.00036328938,0.042425588],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99986005,0.000007375088,0.0000051385264,0.000026634552,0.00007653269,0.000024238598],"domain_scores_gemma":[0.99992955,0.00000881482,0.00001004759,0.000008871899,0.00003239238,0.00001026727],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00010445619,0.00033305772,0.00022471977,0.0002454254,0.00035869319,0.00055669766,0.00058450503,0.0004586457,0.0035302942],"category_scores_gemma":[0.00013727149,0.00022100573,0.0003090721,0.00010350551,0.00016633257,0.00024050022,0.00030511786,0.00036498564,0.0016250737],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000018395649,0.00001793264,0.0000668888,0.000034771718,0.000004385991,0.00015418963,0.000030741234,0.00014101266,0.99559265,0.00019437805,0.00039314982,0.003351487],"study_design_scores_gemma":[0.000005159892,0.00005106793,0.00037956962,0.0000023560215,0.0000039650386,0.00009765032,0.0000094108655,0.00090413005,0.99463767,0.000021883568,0.0038831139,0.0000039846555],"about_ca_topic_score_codex":0.00062459765,"about_ca_topic_score_gemma":0.00092188636,"teacher_disagreement_score":0.0035302942,"about_ca_system_score_codex":0.00023623422,"about_ca_system_score_gemma":0.00021180639,"threshold_uncertainty_score":0.011810005},"labels":[],"label_agreement":null},{"id":"W3177826082","doi":"10.1039/d1ta05268c","title":"Unveiling the crystalline packing of Y6 in thin films by thermally induced “backbone-on” orientation","year":2021,"lang":"en","type":"article","venue":"Journal of Materials Chemistry A","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":45,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Government of Northwest Territories","funders":"Research Grants Council, University Grants Committee; National Natural Science Foundation of China","keywords":"Stacking; Materials science; Crystallography; Scattering; Core (optical fiber); Orientation (vector space); Crystal structure; Thin film; Optics; Composite material; Chemistry; Geometry; Nanotechnology; Organic chemistry; Physics; Mathematics","score_opus":0.010688432381999203,"score_gpt":0.21795013776446093,"score_spread":0.20726170538246172,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3177826082","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99741155,0.00017424767,0.0009092449,0.000055370536,0.000017611032,0.0000055437135,0.00007015256,0.000028227396,0.0013280789],"genre_scores_gemma":[0.9968353,0.00029831548,0.0017748913,0.000032887117,0.000009669285,0.000008592694,0.000113846705,0.00003303064,0.00089364627],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.999964,0.0000024416042,0.0000016930298,0.000006876089,0.00001211295,0.000012912922],"domain_scores_gemma":[0.9999324,0.000019253483,0.000018448562,0.0000074251725,0.000013547745,0.000008790785],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00005653906,0.0001946451,0.00010219728,0.000085250846,0.00024660007,0.00029965347,0.00019498372,0.00020759847,0.0015855182],"category_scores_gemma":[0.00014167967,0.00029882812,0.000093616094,0.00009879372,0.00027037138,0.00023254908,0.00013465094,0.0005366305,0.00018301095],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00004531409,0.000008865103,0.00024214176,0.000025750118,0.0000021501316,0.000049353243,0.00003242661,0.000102190534,0.99875975,0.0001257994,0.00005392304,0.0005523112],"study_design_scores_gemma":[0.000011212211,0.000076526325,0.0029119034,0.000006179146,0.000005513091,0.0000652474,0.00007442298,0.0019759093,0.9941512,0.00004932126,0.0006671407,0.0000052721343],"about_ca_topic_score_codex":0.0015384452,"about_ca_topic_score_gemma":0.003405186,"teacher_disagreement_score":0.0015855182,"about_ca_system_score_codex":0.00017570151,"about_ca_system_score_gemma":0.00015647677,"threshold_uncertainty_score":0.005304098},"labels":[],"label_agreement":null},{"id":"W3186688412","doi":"10.1149/ma2021-0121858mtgabs","title":"Mechanical and Optical Properties of Amorphous SiN-Based Films Prepared By ECR PECVD and CCP PECVD","year":2021,"lang":"en","type":"article","venue":"ECS Meeting Abstracts","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McMaster University","funders":"","keywords":"Plasma-enhanced chemical vapor deposition; Materials science; Thin film; Ellipsometry; Chemical vapor deposition; Amorphous solid; Nanoindentation; Electron cyclotron resonance; Carbon film; Analytical Chemistry (journal); Residual stress; Silicon nitride; Composite material; Silicon; Nanotechnology; Optoelectronics; Chemistry; Crystallography; Ion; Organic chemistry","score_opus":0.01177167379616482,"score_gpt":0.19116532333784733,"score_spread":0.17939364954168252,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3186688412","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9971974,0.00070799154,0.00071647303,0.000030010642,0.00002789494,0.000015014274,0.0003174976,0.000022574397,0.00096515485],"genre_scores_gemma":[0.99303836,0.0008342004,0.0036006076,0.000024054292,0.00001686336,0.000027068321,0.00041831483,0.000024771345,0.0020157215],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998708,0.0000074635554,0.00000782635,0.00002936574,0.000064898966,0.000019679608],"domain_scores_gemma":[0.99983215,0.000042282125,0.000041740135,0.000016206315,0.000048210397,0.000019485487],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00019193538,0.00027190355,0.00021845482,0.0002754067,0.00016916009,0.00024706675,0.00023856196,0.0003384339,0.0010925147],"category_scores_gemma":[0.0002489124,0.00020779589,0.0001324589,0.0003232395,0.0001941363,0.00016163301,0.00008676053,0.00034385652,0.00017973111],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000023084864,0.000010304987,0.0001468988,0.000037270813,0.0000040071423,0.00003538091,0.000025261901,0.00008788601,0.99898297,0.000023700035,0.000034049088,0.0005890677],"study_design_scores_gemma":[0.000011229668,0.00021647704,0.010542706,0.000008261104,0.0000157032,0.00007326122,0.00005667611,0.0015182444,0.98668694,0.000016009268,0.00084700296,0.0000075344055],"about_ca_topic_score_codex":0.0006770868,"about_ca_topic_score_gemma":0.001284691,"teacher_disagreement_score":0.0010925147,"about_ca_system_score_codex":0.00023681964,"about_ca_system_score_gemma":0.000100663696,"threshold_uncertainty_score":0.0036548376},"labels":[],"label_agreement":null},{"id":"W3205415165","doi":"10.1109/jeds.2021.3113486","title":"Guest Editorial Special Section From the Selected Extended Papers Presented at the CAD-TFT 2020","year":2021,"lang":"en","type":"editorial","venue":"IEEE Journal of the Electron Devices Society","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":true,"ca_institutions":"","funders":"","keywords":"Thin-film transistor; Technology CAD; CAD; Computer science; Computer Aided Design; Electronic design automation; Telecommunications; Electrical engineering; Engineering; Mechanical engineering; Engineering drawing; Nanotechnology; Materials science","score_opus":0.00370242054161005,"score_gpt":0.2060309618926587,"score_spread":0.20232854135104866,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3205415165","genre_codex":"editorial","genre_gemma":"editorial","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"editorial","genre_consensus":"editorial","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.00006764325,0.0033282712,0.00025898524,0.008036547,0.978785,0.00004215052,0.00007799379,0.00012359401,0.009279865],"genre_scores_gemma":[0.0009712118,0.005802322,0.0003253614,0.0063522407,0.88818765,0.000049484133,0.00018045321,0.00019204784,0.09793928],"study_design_codex":"not_applicable","study_design_gemma":"not_applicable","domain_scores_codex":[0.9974613,0.00020094615,0.00021829105,0.0003060865,0.001630682,0.00018265985],"domain_scores_gemma":[0.98973477,0.0012134035,0.00055502006,0.00024367968,0.0059767724,0.00227637],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0030394876,0.002754062,0.0016445019,0.003910811,0.0022440336,0.0063335747,0.0015711085,0.0043643126,0.07930128],"category_scores_gemma":[0.007267727,0.00067424774,0.0015413433,0.0012168636,0.00087095186,0.0026328457,0.0012488503,0.0052984655,0.054868333],"study_design_candidate":"not_applicable","study_design_consensus":"not_applicable","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000036327536,0.000015073888,0.00001551637,0.00015183649,0.000004639342,0.000087767425,0.000006402084,0.000027347083,0.00026378245,0.00022462694,0.9894042,0.0097623905],"study_design_scores_gemma":[0.000017631528,0.000024783074,0.000107270185,0.00007697405,0.000010472869,0.00016458286,0.000014962143,0.00006890684,0.00024200145,0.0003365649,0.9989286,0.000007249164],"about_ca_topic_score_codex":0.0006045673,"about_ca_topic_score_gemma":0.0019587753,"teacher_disagreement_score":0.07930128,"about_ca_system_score_codex":0.0018889325,"about_ca_system_score_gemma":0.0020012017,"threshold_uncertainty_score":0.26528925},"labels":[],"label_agreement":null},{"id":"W3210932114","doi":"10.29026/oea.2021.210039","title":"Hybrid artificial neural networks and analytical model for prediction of optical constants and bandgap energy of 3D nanonetwork silicon structures","year":2021,"lang":"en","type":"article","venue":"Opto-Electronic Advances","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":13,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Ontario Tech University","funders":"","keywords":"Opacity; Materials science; Transmittance; Band gap; Artificial neural network; Silicon; Optoelectronics; Optics; Reflectivity; Computer science; Artificial intelligence; Physics","score_opus":0.008590748099673747,"score_gpt":0.2188081371907255,"score_spread":0.21021738909105175,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3210932114","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.18834132,0.0009086947,0.8045605,0.000214868,0.00004888149,0.00005130618,0.00015599263,0.0010113602,0.0047072214],"genre_scores_gemma":[0.9008412,0.00037517436,0.0953928,0.00006456602,0.000021760263,0.00012707444,0.00018195146,0.000046907327,0.0029485303],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99989355,0.00002314591,0.0000059702284,0.000025695896,0.000037685713,0.000013921061],"domain_scores_gemma":[0.99969554,0.00018009676,0.000037078862,0.000014384695,0.00006512466,0.000007859936],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00040556275,0.0005340974,0.00033004445,0.00053391163,0.00020815442,0.00045532786,0.0005681905,0.0006827072,0.0007542087],"category_scores_gemma":[0.00083671755,0.00034323405,0.00038335775,0.00035735287,0.00022776799,0.0006239509,0.0002957526,0.00062555145,0.00018718674],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000031752832,0.000040111216,0.00062233483,0.0000332533,0.000022856797,0.000025036241,0.000012809279,0.9706468,0.0033853299,0.0013296255,0.0002073236,0.023642756],"study_design_scores_gemma":[3.329182e-7,0.0000019675933,0.000031537325,6.4841475e-7,6.2167663e-7,0.0000011237673,6.114562e-7,0.9996131,0.00021386765,0.00011196906,0.000023609511,5.9521574e-7],"about_ca_topic_score_codex":0.0056829047,"about_ca_topic_score_gemma":0.006377422,"teacher_disagreement_score":0.0056829047,"about_ca_system_score_codex":0.00070109084,"about_ca_system_score_gemma":0.00062588806,"threshold_uncertainty_score":0.01129967},"labels":[],"label_agreement":null},{"id":"W4205477605","doi":"10.1557/s43577-021-00228-8","title":"Metal oxide semiconductor thin-film transistor backplanes for displays and imaging","year":2021,"lang":"en","type":"article","venue":"MRS Bulletin","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":25,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"IGNIS Innovation (Canada)","funders":"","keywords":"Active matrix; Thin-film transistor; Materials science; Optoelectronics; Backplane; Transistor; Flat panel display; Diode; Semiconductor; Threshold voltage; Oxide thin-film transistor; Voltage; Nanotechnology; Electrical engineering; Engineering; Layer (electronics)","score_opus":0.007988658920660537,"score_gpt":0.1915286976008647,"score_spread":0.18354003868020416,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4205477605","genre_codex":"other","genre_gemma":"methods","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"methods","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.05789229,0.07781553,0.06943627,0.02237873,0.019976184,0.0005075134,0.0023366932,0.0038157273,0.7458411],"genre_scores_gemma":[0.07671419,0.03658005,0.043755364,0.0012851561,0.0024596571,0.00009919104,0.0014463634,0.0005693301,0.8370907],"study_design_codex":"not_applicable","study_design_gemma":"not_applicable","domain_scores_codex":[0.99990904,0.000006673097,0.0000027033993,0.000007632786,0.00006418168,0.000009714123],"domain_scores_gemma":[0.9998634,0.000041019197,0.000009043065,0.000008084172,0.00006370615,0.000014727601],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00019269122,0.0005270354,0.00024930952,0.0006877623,0.00050953036,0.0010435972,0.0003580176,0.0004789588,0.026984688],"category_scores_gemma":[0.00036429768,0.00028131384,0.00017027832,0.00034427457,0.00019902839,0.00067330606,0.00023000859,0.00092058233,0.006608155],"study_design_candidate":"not_applicable","study_design_consensus":"not_applicable","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0002746204,0.00016024776,0.0003358793,0.00055990426,0.000037437145,0.0003168725,0.00014318478,0.00045275432,0.34886444,0.04820917,0.3803247,0.22032079],"study_design_scores_gemma":[0.000034202054,0.00020241228,0.0011177212,0.00008926373,0.000030885458,0.00039376668,0.00008200258,0.0024345978,0.1125125,0.0034297334,0.87965876,0.000014205136],"about_ca_topic_score_codex":0.0010411375,"about_ca_topic_score_gemma":0.004835622,"teacher_disagreement_score":0.026984688,"about_ca_system_score_codex":0.00038840921,"about_ca_system_score_gemma":0.00031549917,"threshold_uncertainty_score":0.090272784},"labels":[],"label_agreement":null},{"id":"W4205906702","doi":"10.1007/s10854-021-07662-z","title":"High-performance a-IGZO-based flexible TTFT with stacked dielectric layers via ultrathin high-κ SrTiO3 buffer layer grown on HfO2","year":2022,"lang":"en","type":"article","venue":"Journal of Materials Science Materials in Electronics","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":8,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Mitel (Canada)","funders":"Türkiye Bilimsel ve Teknolojik Araştırma Kurumu","keywords":"Thin-film transistor; Materials science; Optoelectronics; X-ray photoelectron spectroscopy; Amorphous solid; Layer (electronics); Scanning electron microscope; Dielectric; Transmittance; OLED; Substrate (aquarium); Nanotechnology; Chemistry; Crystallography; Composite material","score_opus":0.007077652749505832,"score_gpt":0.19862070976170532,"score_spread":0.19154305701219948,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4205906702","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99552333,0.00047266108,0.0015797964,0.00006518429,0.000082190796,0.000008883415,0.00035821562,0.00023134291,0.0016784153],"genre_scores_gemma":[0.995904,0.00020808901,0.0015771483,0.000023124285,0.000013436947,0.000008486173,0.00024008573,0.000020833475,0.0020048793],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99993443,0.0000020617604,0.0000023365303,0.000019034149,0.000020306257,0.000021861524],"domain_scores_gemma":[0.9999479,0.0000050200056,0.000013481141,0.0000074336554,0.000011683011,0.00001452228],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0000702313,0.0002936762,0.0002779093,0.0001743798,0.00020015502,0.00037168915,0.0005939119,0.0003414765,0.0013688573],"category_scores_gemma":[0.00008170151,0.000116761126,0.00019288332,0.00031303393,0.00011641527,0.00040307344,0.00019959948,0.00020928938,0.0003247224],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00008025101,0.000017013483,0.00017616061,0.000032818345,0.000008723804,0.000094137074,0.000011989755,0.00012660956,0.9978709,0.000056327728,0.00022419568,0.0013009402],"study_design_scores_gemma":[0.00004029589,0.00052450155,0.007381584,0.000012590725,0.000049972117,0.00019870627,0.000048867845,0.005093128,0.9837886,0.00005048235,0.0027880238,0.000023220253],"about_ca_topic_score_codex":0.001652225,"about_ca_topic_score_gemma":0.0042355335,"teacher_disagreement_score":0.001652225,"about_ca_system_score_codex":0.0003058343,"about_ca_system_score_gemma":0.00016491755,"threshold_uncertainty_score":0.004579246},"labels":[],"label_agreement":null},{"id":"W4226252408","doi":"10.1109/jflex.2022.3165140","title":"Self-Consistent Extraction of Mobility and Series Resistance: A Hierarchy of Models for Benchmarking Organic Thin-Film Transistors","year":2022,"lang":"en","type":"article","venue":"IEEE Journal on Flexible Electronics","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":7,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Ottawa","funders":"Natural Sciences and Engineering Research Council of Canada; Conselho Nacional de Desenvolvimento Científico e Tecnológico","keywords":"Transistor; Contact resistance; Computer science; Thin-film transistor; Organic semiconductor; Optoelectronics; Materials science; Electronic engineering; Voltage; Electrical engineering; Nanotechnology; Engineering","score_opus":0.011932161895807135,"score_gpt":0.22052459307021802,"score_spread":0.20859243117441087,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4226252408","genre_codex":"methods","genre_gemma":"methods","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"methods","genre_consensus":"methods","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.28363326,0.0024291899,0.6891477,0.00055776705,0.000110734174,0.00015279408,0.0011156144,0.0010065645,0.021846332],"genre_scores_gemma":[0.9285086,0.001339737,0.065327354,0.00009953293,0.00005589221,0.0002551474,0.000990262,0.00017238964,0.0032511319],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99977916,0.000064355416,0.000013840062,0.000024812574,0.00009295372,0.000024894727],"domain_scores_gemma":[0.9995957,0.00020147103,0.000037002777,0.00006696646,0.00007792359,0.000020932428],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00064137427,0.0005996307,0.00061917235,0.00067911507,0.00025233056,0.00069980015,0.0012662925,0.00084039115,0.0007509478],"category_scores_gemma":[0.0018366753,0.00023004872,0.0006239268,0.00061359786,0.00036424457,0.00097514235,0.000411613,0.0006465079,0.00024112746],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00004539524,0.000092609465,0.0009923287,0.00019454134,0.000054182696,0.000118600554,0.000062850144,0.9329881,0.013479688,0.038670108,0.0009554753,0.012346069],"study_design_scores_gemma":[0.0000021074384,0.000012938737,0.000066100896,0.000006140782,0.0000033450658,0.00000784703,0.0000042119536,0.9953023,0.0010365022,0.00329565,0.00025939223,0.000003374177],"about_ca_topic_score_codex":0.0014627333,"about_ca_topic_score_gemma":0.0014493825,"teacher_disagreement_score":0.0014627333,"about_ca_system_score_codex":0.00047072387,"about_ca_system_score_gemma":0.00053221994,"threshold_uncertainty_score":0.0034154058},"labels":[],"label_agreement":null},{"id":"W4231159898","doi":"10.1149/ma2005-01/45/1758","title":"Active Pixel Sensor Array for Digital X-ray Imaging in a-Si:H Technology","year":2006,"lang":"en","type":"article","venue":"ECS Meeting Abstracts","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Pixel; X-ray; Image sensor; Materials science; Optics; Computer graphics (images); Computer science; Physics","score_opus":0.00615298101242734,"score_gpt":0.20037530935460424,"score_spread":0.1942223283421769,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4231159898","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.55175453,0.0035184762,0.38052785,0.0018475166,0.001290642,0.0005148128,0.0032661357,0.0059996024,0.051280472],"genre_scores_gemma":[0.7059495,0.00093613757,0.25402275,0.0006132362,0.00018594072,0.00020526192,0.0008706971,0.00015885936,0.037057683],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998123,0.000020036654,0.0000061620162,0.000048940805,0.00009429036,0.00001825221],"domain_scores_gemma":[0.99974483,0.00007834598,0.000024720364,0.000024478775,0.00009717777,0.00003057989],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00023374571,0.0002623666,0.0003026189,0.00025928306,0.0002854099,0.00057557505,0.0008170607,0.0006919862,0.0107625015],"category_scores_gemma":[0.0003383334,0.00028659275,0.00017564306,0.00025871338,0.00020713203,0.000682619,0.00027863705,0.00040852244,0.0021572895],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0002220798,0.000072975636,0.00044612918,0.00013471568,0.000020433767,0.00005398758,0.000023887624,0.00021129695,0.9740768,0.0012530941,0.0036619364,0.019822547],"study_design_scores_gemma":[0.000042436834,0.00048310513,0.0025211603,0.00001399529,0.00004924463,0.00031940834,0.00003219701,0.011565964,0.9708435,0.00033260725,0.013777257,0.000019246443],"about_ca_topic_score_codex":0.00035474414,"about_ca_topic_score_gemma":0.0010222582,"teacher_disagreement_score":0.0107625015,"about_ca_system_score_codex":0.00032779362,"about_ca_system_score_gemma":0.00031060874,"threshold_uncertainty_score":0.036004186},"labels":[],"label_agreement":null},{"id":"W4232424247","doi":"10.1149/ma2015-01/23/1462","title":"Optically Transparent Flexible IGZO TFTs Fabricated with a Selective Wet-Etch Process","year":2015,"lang":"en","type":"article","venue":"ECS Meeting Abstracts","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Thin-film transistor; Materials science; Optoelectronics; Active matrix; Oxide thin-film transistor; Amorphous solid; OLED; Flexible display; Flexible electronics; Nanotechnology","score_opus":0.028451972733033393,"score_gpt":0.24474557230935087,"score_spread":0.21629359957631747,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4232424247","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9542693,0.0013233895,0.037053525,0.00015381828,0.00016637765,0.00009329532,0.0007196376,0.0008472197,0.005373506],"genre_scores_gemma":[0.957838,0.00089997833,0.037817057,0.00007898565,0.000033948727,0.00007909766,0.0005051156,0.000074565614,0.0026734252],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999373,0.0000020640289,0.0000031906172,0.000018298746,0.00002148705,0.000017646522],"domain_scores_gemma":[0.9999635,0.0000062110066,0.000010982035,0.000005886848,0.00000794568,0.0000054755833],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0000730198,0.00032795678,0.00020179014,0.00020215834,0.00015406105,0.00017013484,0.00032626494,0.0003194916,0.0007419805],"category_scores_gemma":[0.000113204245,0.00019692592,0.00021964363,0.00020960932,0.0002007146,0.00024838824,0.00014544162,0.00034044572,0.000337243],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00001630994,0.0000030291503,0.00004839638,0.000015063743,0.0000016913806,0.000033970016,0.000010505853,0.00003439425,0.9988803,0.00003129865,0.00003598991,0.0008889839],"study_design_scores_gemma":[0.000017895763,0.00007930355,0.0025369055,0.0000047610547,0.000015421065,0.00017744231,0.000015073135,0.0011871525,0.9939547,0.000031788877,0.0019722097,0.000007444677],"about_ca_topic_score_codex":0.0010009077,"about_ca_topic_score_gemma":0.001385627,"teacher_disagreement_score":0.0010009077,"about_ca_system_score_codex":0.00019795794,"about_ca_system_score_gemma":0.00012549825,"threshold_uncertainty_score":0.0024821758},"labels":[],"label_agreement":null},{"id":"W4233394936","doi":"10.1149/09807.0109ecst","title":"Effect of Glass Substrate on the Film Properties of Poly Silicon by Excimer Laser Annealing","year":2020,"lang":"en","type":"article","venue":"ECS Transactions","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Research & Development Corporation","funders":"","keywords":"Materials science; Silicon; Excimer laser; Composite material; Amorphous solid; Amorphous silicon; Polycrystalline silicon; Substrate (aquarium); Nanocrystalline silicon; Crystallization; Borosilicate glass; Annealing (glass); Layer (electronics); Crystalline silicon; Chemical engineering; Laser; Thin-film transistor; Optics; Optoelectronics; Crystallography; Chemistry","score_opus":0.013914968443931726,"score_gpt":0.1919974741802071,"score_spread":0.17808250573627538,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4233394936","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.997781,0.0006636661,0.0005780054,0.000031999625,0.000016000447,0.0000090892945,0.00010152087,0.00003097035,0.0007877657],"genre_scores_gemma":[0.99849105,0.0003014569,0.00047098644,0.000013817921,0.0000039358392,0.000005805211,0.00010253434,0.000024724799,0.00058576395],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998847,0.0000095204,0.0000087757835,0.000027607786,0.00003358014,0.00003572645],"domain_scores_gemma":[0.9998306,0.00007423656,0.000034414497,0.000020589343,0.000027631158,0.000012439572],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000093112096,0.0002428211,0.00021453665,0.00008997898,0.00017327495,0.00034630857,0.00012821586,0.00017919517,0.0017098979],"category_scores_gemma":[0.00023566998,0.00021195709,0.00016457762,0.000124467,0.00014206982,0.00020656876,0.00010663458,0.00024267206,0.00022998576],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00006359614,0.000005422612,0.00026439753,0.000029752808,0.0000069920234,0.00004622894,0.00002608174,0.000114168,0.9987214,0.000015697255,0.000020027926,0.00068617676],"study_design_scores_gemma":[0.0000039520596,0.00010241751,0.0039538075,0.0000023790537,0.000010165427,0.00003891169,0.000025118197,0.0005905849,0.9949498,0.000005145671,0.00031456235,0.0000031563543],"about_ca_topic_score_codex":0.0011662929,"about_ca_topic_score_gemma":0.0023194598,"teacher_disagreement_score":0.0017098979,"about_ca_system_score_codex":0.00021286908,"about_ca_system_score_gemma":0.0001318276,"threshold_uncertainty_score":0.005720198},"labels":[],"label_agreement":null},{"id":"W4235261563","doi":"10.1149/ma2018-02/36/1200","title":"Integration Challenges of Flash Lamp Annealed LTPS for High Performance CMOS TFTs","year":2018,"lang":"en","type":"article","venue":"ECS Meeting Abstracts","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Research & Development Corporation","funders":"","keywords":"Flash-lamp; Materials science; Optoelectronics; Amorphous solid; Amorphous silicon; Dopant Activation; Passivation; Polycrystalline silicon; Annealing (glass); CMOS; Silicon; Dopant; Nanotechnology; Engineering physics; Crystalline silicon; Thin-film transistor; Doping; Metallurgy; Layer (electronics)","score_opus":0.018746322943595243,"score_gpt":0.22032746268519335,"score_spread":0.2015811397415981,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4235261563","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9398301,0.013101009,0.037125092,0.0018668278,0.00028362495,0.00009351576,0.0003928369,0.0005598513,0.0067470996],"genre_scores_gemma":[0.9573246,0.005245455,0.03302936,0.00024010094,0.0001235314,0.00006907664,0.00031070426,0.0001345037,0.003522774],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9996592,0.000022741719,0.00001879341,0.00005807772,0.00019473491,0.00004650797],"domain_scores_gemma":[0.9997218,0.00006432197,0.000049700142,0.000038718805,0.000097808515,0.000027580923],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0004113833,0.00015836327,0.00039291187,0.00015420801,0.00030525404,0.00069062837,0.0005654745,0.00067493174,0.0010798516],"category_scores_gemma":[0.0006578596,0.00018651383,0.0002578441,0.00022878769,0.00019454138,0.0006944874,0.0002937781,0.0005672903,0.00064573175],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000026963586,0.000015713402,0.00033632785,0.00011941781,0.000008399228,0.00017133012,0.000069345,0.0007697722,0.9878159,0.0004795703,0.00028446555,0.00990271],"study_design_scores_gemma":[0.000018194633,0.00068449584,0.006110059,0.000047593967,0.0000512839,0.001170855,0.00022668295,0.012784134,0.9553814,0.0006556912,0.022837836,0.000031762735],"about_ca_topic_score_codex":0.0012994262,"about_ca_topic_score_gemma":0.0021097711,"teacher_disagreement_score":0.0012994262,"about_ca_system_score_codex":0.00074498716,"about_ca_system_score_gemma":0.0004532278,"threshold_uncertainty_score":0.005405247},"labels":[],"label_agreement":null},{"id":"W4235897269","doi":"10.1149/ma2008-02/35/2329","title":"Stable Pixel Circuit for Small-Area High-Resolution a-Si:H AMOLED Displays","year":2008,"lang":"en","type":"article","venue":"ECS Meeting Abstracts","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"IGNIS Innovation (Canada)","funders":"","keywords":"AMOLED; Pixel; Materials science; Resolution (logic); High resolution; Optoelectronics; Computer science; Thin-film transistor; Nanotechnology; Artificial intelligence; Remote sensing; Geography; Active matrix","score_opus":0.02911278973602523,"score_gpt":0.20251375103138783,"score_spread":0.1734009612953626,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4235897269","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.6602334,0.003286843,0.30038533,0.001485527,0.0009910783,0.00028388682,0.0018082921,0.005999096,0.02552657],"genre_scores_gemma":[0.95447785,0.00021877109,0.03331727,0.00024636067,0.00013907754,0.00004710996,0.00022446908,0.00010641571,0.011222754],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99990404,0.000011068818,0.0000039325782,0.000025380525,0.000041283973,0.000014357855],"domain_scores_gemma":[0.9998264,0.00005398093,0.00002287358,0.000023837763,0.00005669489,0.00001617457],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00015396957,0.00012491037,0.0001286066,0.00017177648,0.00030860127,0.0005027834,0.00077317894,0.00039487495,0.008705807],"category_scores_gemma":[0.00032883216,0.00011695057,0.00010240234,0.00020250774,0.00017360123,0.0005120082,0.00019764582,0.00029530548,0.0012898018],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00041654755,0.000060948096,0.0006783184,0.00013682623,0.000021335238,0.00014937532,0.000054084274,0.0003222897,0.94027835,0.0027375778,0.0067222626,0.04842213],"study_design_scores_gemma":[0.000097445176,0.0008247013,0.0043182457,0.000015262729,0.000039250695,0.00060495484,0.000040500585,0.019809429,0.95479727,0.0012568879,0.018171433,0.00002474311],"about_ca_topic_score_codex":0.00023199101,"about_ca_topic_score_gemma":0.00072320155,"teacher_disagreement_score":0.008705807,"about_ca_system_score_codex":0.00026059433,"about_ca_system_score_gemma":0.00014891883,"threshold_uncertainty_score":0.029123783},"labels":[],"label_agreement":null},{"id":"W4239804717","doi":"10.1109/icmel.2000.840533","title":"Amorphous silicon detector and thin film transistor technology for large area imaging of X-rays","year":2002,"lang":"en","type":"article","venue":"","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":3,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Thin-film transistor; Fabrication; Materials science; Optoelectronics; Transistor; Amorphous silicon; Detector; Silicon; Thin film; Leakage (economics); X-ray detector; Amorphous solid; Electronics; Nanotechnology; Electrical engineering; Crystalline silicon; Engineering; Voltage; Chemistry","score_opus":0.010047019696058786,"score_gpt":0.18483274977579706,"score_spread":0.17478573007973827,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4239804717","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.045187414,0.21032038,0.6656718,0.0028042346,0.0031658798,0.00038212296,0.0007405284,0.003001219,0.06872639],"genre_scores_gemma":[0.18485661,0.13486885,0.60382307,0.0022794213,0.0015382522,0.00036394942,0.00074091344,0.0003271435,0.071201935],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99977916,0.000030887644,0.000013070484,0.000036182322,0.00012764231,0.000013011024],"domain_scores_gemma":[0.9998148,0.00007854725,0.000025437603,0.000015636286,0.000050601404,0.000015008386],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0002160353,0.00046317678,0.00046438235,0.0006227321,0.00040082636,0.0008727167,0.00064507226,0.0009821497,0.003599633],"category_scores_gemma":[0.00031388446,0.00031701033,0.00033170875,0.0006530318,0.00039969996,0.0008756833,0.00028499984,0.00085362146,0.0016650312],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00009115745,0.000046687524,0.0011458436,0.0014066375,0.00007553371,0.0013025098,0.00015092031,0.001407938,0.7524714,0.04019899,0.015128764,0.18657374],"study_design_scores_gemma":[0.00002605581,0.0005119645,0.0027371962,0.00021161026,0.00014780386,0.009005302,0.00012767714,0.013113658,0.404075,0.010800421,0.559165,0.000078428224],"about_ca_topic_score_codex":0.00027412307,"about_ca_topic_score_gemma":0.0007777487,"teacher_disagreement_score":0.003599633,"about_ca_system_score_codex":0.00026040358,"about_ca_system_score_gemma":0.00032358328,"threshold_uncertainty_score":0.012041986},"labels":[],"label_agreement":null},{"id":"W4241386457","doi":"10.1149/ma2018-02/36/1213","title":"A 2D Empirical Model for On-State Operation of Scaled IGZO TFTs Exemplifying the Physical Response of TCAD Simulation","year":2018,"lang":"en","type":"article","venue":"ECS Meeting Abstracts","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Research & Development Corporation","funders":"","keywords":"Technology CAD; Spice; Threshold voltage; Channel (broadcasting); Transistor; Electronic engineering; Thin-film transistor; Figure of merit; Materials science; Voltage; Optoelectronics; Computer science; Electrical engineering; Engineering; CAD; Nanotechnology","score_opus":0.043978380566365584,"score_gpt":0.30869750560452275,"score_spread":0.26471912503815714,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4241386457","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.53415865,0.0011997594,0.3937695,0.0017222117,0.00019239576,0.00020217887,0.0033931513,0.0010983928,0.06426374],"genre_scores_gemma":[0.969191,0.0005995076,0.018188115,0.00013604904,0.000031234184,0.00021974348,0.0004721261,0.00007932091,0.011082984],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9999347,0.000012904947,0.0000029893665,0.000016204516,0.000021324864,0.000011873717],"domain_scores_gemma":[0.9998964,0.000044849927,0.000009866466,0.000014653219,0.00002726303,0.0000069181137],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00012255427,0.0003291232,0.00040688855,0.00024326857,0.00025859353,0.00048431646,0.0010354562,0.0012772676,0.0031333326],"category_scores_gemma":[0.0005283205,0.00022189444,0.00045911726,0.00031704537,0.0003812485,0.0005148288,0.0002511631,0.0005068953,0.00039983983],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000020200092,0.000012227475,0.0005671119,0.000026312995,0.000008449378,0.00008713596,0.00004993067,0.9884946,0.0034253236,0.0051497812,0.00033320955,0.0018257455],"study_design_scores_gemma":[0.0000028264737,0.0000066415837,0.00014452774,0.0000023642212,0.000002231777,0.000013305069,0.0000047514577,0.9988059,0.00015603482,0.00044919818,0.00040945248,0.000002744397],"about_ca_topic_score_codex":0.014179197,"about_ca_topic_score_gemma":0.006880362,"teacher_disagreement_score":0.014179197,"about_ca_system_score_codex":0.00088144536,"about_ca_system_score_gemma":0.0005706183,"threshold_uncertainty_score":0.028193355},"labels":[],"label_agreement":null},{"id":"W4245066318","doi":"10.1109/jdt.2006.875140","title":"A Driving Scheme for Active-Matrix Organic Light-Emitting Diode Displays Based on Feedback","year":2006,"lang":"en","type":"article","venue":"Journal of Display Technology","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":20,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"AMOLED; OLED; Active matrix; Thin-film transistor; Optoelectronics; Materials science; Diode; Threshold voltage; Voltage; Transistor; Computer science; Amorphous silicon; Electronic engineering; Electrical engineering; Silicon; Crystalline silicon; Engineering; Nanotechnology","score_opus":0.0038324576153726587,"score_gpt":0.21376763028076692,"score_spread":0.20993517266539427,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4245066318","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.6883018,0.0012272346,0.2999732,0.00048793122,0.00028716473,0.00030568423,0.0005157573,0.004064062,0.004837241],"genre_scores_gemma":[0.92328006,0.00032783975,0.07276959,0.00010016604,0.000046348538,0.00008183871,0.00010066247,0.00005468228,0.0032388698],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999373,0.0000058152327,0.0000029450414,0.000014461648,0.000030804356,0.00000868441],"domain_scores_gemma":[0.9999106,0.00003016519,0.0000143636325,0.0000101086125,0.000022347282,0.000012374481],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000081633756,0.00023706749,0.00012310827,0.000139268,0.00022344833,0.00018507022,0.00068386167,0.00024363112,0.0012595772],"category_scores_gemma":[0.00019056498,0.00016326469,0.000113938295,0.00008708463,0.00013566585,0.0003154014,0.0001800838,0.00028074635,0.0003043085],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000048459035,0.000029793227,0.00013141139,0.000050135663,0.000004860448,0.000073448944,0.000028955676,0.0004868026,0.98410493,0.00091355655,0.0002883876,0.013839311],"study_design_scores_gemma":[0.000040773455,0.00038511216,0.00081297226,0.000008496778,0.000016873368,0.00038117907,0.000009513036,0.02196195,0.9694771,0.00039557053,0.0064884913,0.000021895234],"about_ca_topic_score_codex":0.00058373204,"about_ca_topic_score_gemma":0.00083922636,"teacher_disagreement_score":0.0012595772,"about_ca_system_score_codex":0.0002523582,"about_ca_system_score_gemma":0.00018985929,"threshold_uncertainty_score":0.0042136908},"labels":[],"label_agreement":null},{"id":"W4247682502","doi":"10.22215/etd/2014-10301","title":"Fabrication and Characterization of Nanostructured Silicon Films for Photovoltaic Applications","year":2014,"lang":"en","type":"dissertation","venue":"","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Carleton University","funders":"","keywords":"Materials science; Optoelectronics; Band gap; Semiconductor; Substrate (aquarium); Amorphous silicon; Silicon; Thin film; Solar cell; Photovoltaic system; Characterization (materials science); Absorption (acoustics); Refractive index; Amorphous solid; Crystalline silicon; Optics; Nanotechnology; Composite material; Electrical engineering; Chemistry","score_opus":0.00520426808676081,"score_gpt":0.20472259876246302,"score_spread":0.1995183306757022,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4247682502","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.93516994,0.0080097895,0.03517713,0.00059128366,0.0002788575,0.00033978032,0.0017820916,0.00014507721,0.018506125],"genre_scores_gemma":[0.9323962,0.004622556,0.053116173,0.00013348492,0.000050133483,0.00019311883,0.0017805444,0.000077496974,0.0076303864],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99981326,0.0000084409885,0.000009113272,0.00002892419,0.00012455483,0.00001577613],"domain_scores_gemma":[0.99982387,0.000039372288,0.00002529889,0.000021392752,0.00008161895,0.000008481303],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00028543983,0.00016072257,0.00016239012,0.00019848735,0.0002477657,0.00028948966,0.00028088046,0.00033410528,0.00073896465],"category_scores_gemma":[0.00056194665,0.00019156843,0.00016767911,0.00024199736,0.00014393285,0.00027339254,0.00015496789,0.00039350637,0.00038923835],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000007985534,0.000013521861,0.00015777202,0.000051890584,0.0000030656915,0.000028583878,0.0000203035,0.00019092983,0.99501604,0.00010776595,0.00017206997,0.00423014],"study_design_scores_gemma":[0.000005222298,0.000086497384,0.0036005108,0.000010194986,0.00000606507,0.00010183759,0.000022262528,0.0015911761,0.9903668,0.00009229788,0.0041118753,0.0000053391404],"about_ca_topic_score_codex":0.0006017364,"about_ca_topic_score_gemma":0.0015459675,"teacher_disagreement_score":0.00073896465,"about_ca_system_score_codex":0.0002981787,"about_ca_system_score_gemma":0.00028360446,"threshold_uncertainty_score":0.0024721026},"labels":[],"label_agreement":null},{"id":"W4247704637","doi":"10.1149/ma2009-01/2/107","title":"Ga-doped ZnO TFT Fabricated by Solution Process at Room Temperature","year":2009,"lang":"en","type":"article","venue":"ECS Meeting Abstracts","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Kootenay Association for Science & Technology","funders":"","keywords":"Thin-film transistor; Doping; Materials science; Optoelectronics; Process (computing); Nanotechnology; Computer science; Operating system; Layer (electronics)","score_opus":0.007444361212805739,"score_gpt":0.21036971838232843,"score_spread":0.2029253571695227,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4247704637","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.95448285,0.00333039,0.027367592,0.00045333774,0.00077587314,0.00011049956,0.0025645199,0.0005756997,0.010339092],"genre_scores_gemma":[0.97589797,0.0010273858,0.016213369,0.0000669146,0.000041908123,0.0000327349,0.0007559007,0.00008870867,0.005875252],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999286,0.0000020637353,0.000003051097,0.000028181663,0.000022489625,0.000015522526],"domain_scores_gemma":[0.9999325,0.000015909254,0.000010081339,0.0000067568303,0.000023504372,0.000011148887],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000086110944,0.0002508235,0.00048823789,0.00014765588,0.0003140296,0.00034220977,0.00042438204,0.00041184417,0.002683256],"category_scores_gemma":[0.00023289323,0.00013411492,0.00016110923,0.0002241151,0.0001461679,0.00033226042,0.00007419203,0.00041616132,0.0007821542],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00003289293,0.000003988698,0.00006740365,0.000033226206,0.000002347222,0.00003684891,0.000009906613,0.000019727146,0.99875283,0.00006856279,0.00013611109,0.00083607074],"study_design_scores_gemma":[0.00002545696,0.00011143273,0.0013969388,0.000008777017,0.000020683834,0.00017252276,0.000026048903,0.00077772775,0.9941791,0.00008169131,0.003193961,0.0000054923125],"about_ca_topic_score_codex":0.0029681313,"about_ca_topic_score_gemma":0.0051599485,"teacher_disagreement_score":0.0029681313,"about_ca_system_score_codex":0.00044659732,"about_ca_system_score_gemma":0.0002653985,"threshold_uncertainty_score":0.0089764},"labels":[],"label_agreement":null},{"id":"W4248882436","doi":"10.1109/icwsi.1994.291266","title":"Test vehicle for a wafer-scale thermal pixel scene simulator","year":2002,"lang":"en","type":"article","venue":"","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":3,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Simon Fraser University","funders":"","keywords":"Pixel; Laser; Chip; Interconnection; Resistor; Redundancy (engineering); Wafer; Thermal; Computer science; Electronic engineering; Materials science; Electrical engineering; Optoelectronics; Engineering; Computer vision; Optics; Voltage; Physics","score_opus":0.013946904992922117,"score_gpt":0.1854353498869276,"score_spread":0.17148844489400547,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4248882436","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.79612434,0.00010790199,0.18005167,0.0001795485,0.00010428191,0.00089986785,0.0022172087,0.0077038514,0.012611269],"genre_scores_gemma":[0.9245126,0.000091248236,0.061792336,0.000111737216,0.000010638753,0.00076887175,0.0022484763,0.0007502111,0.009713857],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.999742,0.000040825264,0.0000074671,0.000041855514,0.000110330126,0.000057444624],"domain_scores_gemma":[0.9995685,0.00011040265,0.000032717293,0.000096391006,0.00012741207,0.00006454388],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00035029397,0.00041195864,0.0002739154,0.00020663613,0.00021885343,0.00035597305,0.0010272646,0.00045201567,0.008988419],"category_scores_gemma":[0.0007174368,0.00019645182,0.00023963979,0.00017516805,0.00027354166,0.0004403871,0.00036559993,0.00040062444,0.0013209028],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0013098089,0.0007250155,0.004606627,0.0002596327,0.00008181479,0.00081577234,0.0003626687,0.06573586,0.8759385,0.0055474765,0.007576844,0.03703989],"study_design_scores_gemma":[0.00028628221,0.0051904013,0.0052667386,0.000019666113,0.000050057606,0.0003604911,0.0001573749,0.16351524,0.79715866,0.0005954846,0.027344113,0.00005553643],"about_ca_topic_score_codex":0.0014774872,"about_ca_topic_score_gemma":0.0012233836,"teacher_disagreement_score":0.008988419,"about_ca_system_score_codex":0.00047384933,"about_ca_system_score_gemma":0.0004758248,"threshold_uncertainty_score":0.030069232},"labels":[],"label_agreement":null},{"id":"W4252515784","doi":"10.1149/ma2012-02/42/3048","title":"Simple Aqueous Solution Route for Fabrication of High Performance Oxide TFT","year":2012,"lang":"en","type":"article","venue":"ECS Meeting Abstracts","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Kootenay Association for Science & Technology","funders":"","keywords":"Simple (philosophy); Aqueous solution; Fabrication; Thin-film transistor; Oxide; Materials science; Chemistry; Computer science; Nanotechnology; Organic chemistry; Medicine; Metallurgy","score_opus":0.01452243174933035,"score_gpt":0.21716126047582404,"score_spread":0.2026388287264937,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4252515784","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.63126457,0.027992858,0.29108536,0.0020322048,0.0025674808,0.0010514625,0.004213823,0.0024375438,0.037354726],"genre_scores_gemma":[0.82806665,0.009851048,0.12663847,0.00041775062,0.0003009022,0.00048636802,0.0026909816,0.00022594091,0.031322014],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999169,0.0000056534286,0.000006255621,0.000020461473,0.000042279098,0.000008401401],"domain_scores_gemma":[0.9999645,0.000008286292,0.0000061488,0.0000046127197,0.000011583598,0.000004918904],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00013241192,0.00039208794,0.00027867954,0.00025689352,0.00029717942,0.000203205,0.00032729056,0.00043768497,0.0059713507],"category_scores_gemma":[0.00014894795,0.00016597769,0.00019819138,0.00016654555,0.00011614262,0.00041786474,0.00017716155,0.0005363671,0.0015988147],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000021641408,0.000012954115,0.000023623268,0.00014443982,0.00000575734,0.000080620426,0.000011856161,0.0000373231,0.99400985,0.00025974607,0.0006107833,0.0047813337],"study_design_scores_gemma":[0.000027976894,0.00022018862,0.00033335373,0.000013282745,0.000017324115,0.0003361583,0.000016062073,0.0005499162,0.982841,0.0003055673,0.015329943,0.000009228405],"about_ca_topic_score_codex":0.00031777011,"about_ca_topic_score_gemma":0.0010290458,"teacher_disagreement_score":0.0059713507,"about_ca_system_score_codex":0.00017820927,"about_ca_system_score_gemma":0.00023705303,"threshold_uncertainty_score":0.019976139},"labels":[],"label_agreement":null},{"id":"W4253686714","doi":"10.1149/ma2014-02/47/1918","title":"The Role of Passivation Layer during Thermal Annealing for Oxide Semiconductor Thin Films","year":2014,"lang":"en","type":"article","venue":"ECS Meeting Abstracts","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Kootenay Association for Science & Technology","funders":"","keywords":"Passivation; Materials science; Thin-film transistor; Annealing (glass); Optoelectronics; Dopant; Oxide thin-film transistor; Doping; Plasma-enhanced chemical vapor deposition; Oxide; Layer (electronics); Nanotechnology; Silicon; Composite material; Metallurgy","score_opus":0.009084220368336905,"score_gpt":0.2015786224000223,"score_spread":0.1924944020316854,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4253686714","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9582643,0.015385631,0.021826055,0.00023943411,0.0001732933,0.0000781577,0.00018207007,0.00027078163,0.0035803053],"genre_scores_gemma":[0.98713046,0.0028113136,0.008191714,0.000056113346,0.000024642908,0.000021185126,0.00013387957,0.0000433052,0.0015874314],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999026,0.000015007743,0.0000076065116,0.000025378675,0.000025835478,0.00002350163],"domain_scores_gemma":[0.999864,0.000041129217,0.000029168265,0.00002415723,0.000032200838,0.000009332238],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0001748005,0.00032834156,0.00021724531,0.0001140421,0.00020080016,0.00034205464,0.00026150577,0.00029922268,0.0007934021],"category_scores_gemma":[0.00027730587,0.00017727139,0.0002161474,0.0000934208,0.00015136981,0.0003926318,0.00008149951,0.0002463789,0.0002454764],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000039058836,0.0000056483623,0.0004254481,0.000101463964,0.000007094755,0.000058913218,0.000022976508,0.00007119362,0.9965211,0.00009753275,0.00003237606,0.0026171745],"study_design_scores_gemma":[0.00000256012,0.00014483203,0.0020418377,0.000009840653,0.000022756838,0.0001469444,0.000020009695,0.0005275567,0.99536777,0.00003203037,0.0016810818,0.000002746736],"about_ca_topic_score_codex":0.000412461,"about_ca_topic_score_gemma":0.00060038903,"teacher_disagreement_score":0.0007934021,"about_ca_system_score_codex":0.00013593907,"about_ca_system_score_gemma":0.00013443963,"threshold_uncertainty_score":0.0026541948},"labels":[],"label_agreement":null},{"id":"W4255713039","doi":"10.1149/ma2018-02/36/1221","title":"Channel-Length Dependent Performance Degradation of Thermally Stressed IGZO TFTs","year":2018,"lang":"en","type":"article","venue":"ECS Meeting Abstracts","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Research & Development Corporation","funders":"","keywords":"Passivation; Materials science; Thin-film transistor; Degradation (telecommunications); Optoelectronics; Threshold voltage; Dielectric; Fabrication; Atomic layer deposition; Silicon; Layer (electronics); Electrode; Instability; Transistor; Nanotechnology; Electronic engineering; Electrical engineering; Voltage; Chemistry","score_opus":0.013395512983895698,"score_gpt":0.20665130812357416,"score_spread":0.19325579513967847,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4255713039","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9986457,0.00042202222,0.0005105685,0.000015304271,0.000008217263,0.0000042623196,0.00016144819,0.000026129055,0.00020625508],"genre_scores_gemma":[0.9987815,0.00018131013,0.00041152863,0.000011961458,0.000005547338,0.0000075506186,0.00020312141,0.000013961016,0.0003834841],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99986863,0.000010296758,0.000009570551,0.000030937426,0.000039990027,0.00004050821],"domain_scores_gemma":[0.99981874,0.00004650887,0.000044198052,0.000020246442,0.000048514477,0.000021762025],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00010912363,0.00027918458,0.00027001151,0.00013741359,0.00013321597,0.00028538756,0.00017581497,0.0002830763,0.00076490146],"category_scores_gemma":[0.00033551993,0.00010032867,0.00013824868,0.00017489369,0.00018747788,0.00024467704,0.00013137447,0.00023465004,0.00017429038],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000071339215,0.000004277043,0.00044724884,0.000015253418,0.0000040874233,0.000040678646,0.00003159994,0.00009478449,0.9987142,0.000006132474,0.00001477614,0.0005557313],"study_design_scores_gemma":[0.0000040648865,0.00036530383,0.014407669,0.000003955862,0.000014935676,0.00011576268,0.000050764662,0.0012840979,0.98334366,0.000012404993,0.00039053406,0.0000067970577],"about_ca_topic_score_codex":0.00075921067,"about_ca_topic_score_gemma":0.0008917685,"teacher_disagreement_score":0.00076490146,"about_ca_system_score_codex":0.0002519995,"about_ca_system_score_gemma":0.00008431101,"threshold_uncertainty_score":0.002558887},"labels":[],"label_agreement":null},{"id":"W4283073547","doi":"10.1002/9781119579182.ch1","title":"Photoconductivity: Fundamental Concepts","year":2022,"lang":"en","type":"other","venue":"","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":14,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Saskatchewan","funders":"","keywords":"Photoconductivity; Photocurrent; Optoelectronics; Noise (video); Materials science; Semiconductor; Band gap; Doping; Flicker noise; Flicker; Physics; Condensed matter physics; Electrical engineering; Computer science; Noise figure","score_opus":0.011086211895963123,"score_gpt":0.230335552488992,"score_spread":0.2192493405930289,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4283073547","genre_codex":"methods","genre_gemma":"other","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"other","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.034933858,0.1943767,0.4826071,0.0043581515,0.0030672478,0.0002709966,0.0009517616,0.001090002,0.27834427],"genre_scores_gemma":[0.6511145,0.11189787,0.13167383,0.0031824065,0.004237553,0.0009640014,0.0007313258,0.0007378212,0.0954606],"study_design_codex":"theoretical_or_conceptual","study_design_gemma":"theoretical_or_conceptual","domain_scores_codex":[0.9993562,0.00009539687,0.000043910753,0.00018725973,0.0002600154,0.00005705291],"domain_scores_gemma":[0.99939334,0.00021651362,0.00009180914,0.00011539401,0.00015407769,0.000028856344],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0007296914,0.0007926936,0.00057132414,0.0019810202,0.0006267695,0.0022427335,0.0016772408,0.0012098068,0.0044861245],"category_scores_gemma":[0.0010700113,0.00034984061,0.00034504227,0.0015897426,0.0025154997,0.0027435422,0.0011033235,0.0018492427,0.0018798627],"study_design_candidate":"theoretical_or_conceptual","study_design_consensus":"theoretical_or_conceptual","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000039304858,0.00007977689,0.0003366307,0.0009580784,0.000022141794,0.0002110458,0.00048364594,0.0028023254,0.0399483,0.8673008,0.0075273374,0.08029069],"study_design_scores_gemma":[0.000010864957,0.00016918966,0.0010130245,0.00046155113,0.000024996802,0.0013931013,0.00020378103,0.016524404,0.038236257,0.5735386,0.36834654,0.00007759597],"about_ca_topic_score_codex":0.0004621333,"about_ca_topic_score_gemma":0.00019896125,"teacher_disagreement_score":0.0044861245,"about_ca_system_score_codex":0.0010936419,"about_ca_system_score_gemma":0.00033982866,"threshold_uncertainty_score":0.0150075555},"labels":[],"label_agreement":null},{"id":"W4285398846","doi":"10.1149/ma2022-01191052mtgabs","title":"PECVD Silicon Nitride-Based Multilayers with Optimized Mechanical Properties","year":2022,"lang":"en","type":"article","venue":"ECS Meeting Abstracts","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":2,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McMaster University","funders":"","keywords":"Plasma-enhanced chemical vapor deposition; Materials science; Ellipsometry; Silicon nitride; Silicon oxynitride; Thin film; Chemical vapor deposition; Amorphous solid; Electron cyclotron resonance; Amorphous silicon; Passivation; Refractive index; Optoelectronics; Solar cell; Silicon; Composite material; Crystalline silicon; Nanotechnology; Plasma; Layer (electronics); Chemistry; Crystallography","score_opus":0.016080017142923692,"score_gpt":0.19323110976073452,"score_spread":0.1771510926178108,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4285398846","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9946498,0.00094985607,0.0021828914,0.000041156818,0.00003985877,0.00003436198,0.0004971179,0.00011380497,0.0014911686],"genre_scores_gemma":[0.98016894,0.0012453523,0.014108099,0.000053359145,0.00001514141,0.00006662264,0.0008799198,0.00009055946,0.0033720403],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998598,0.0000066365433,0.000012317656,0.000031961696,0.000058030462,0.000031272564],"domain_scores_gemma":[0.99988866,0.000013362305,0.00004534546,0.0000134878655,0.00002453353,0.0000146424745],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00016965273,0.0005059087,0.0003089127,0.00022113051,0.00014684054,0.00026049223,0.0003616942,0.00032704757,0.0011952479],"category_scores_gemma":[0.00017898633,0.0003002019,0.0001998459,0.00024861595,0.000108998414,0.00025017676,0.00019149756,0.0003506254,0.00031208756],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000012744582,0.0000072709713,0.000060567312,0.000026764217,0.0000033359104,0.000017675093,0.000005513641,0.000087342036,0.99946195,0.000011401129,0.000023874112,0.00028160657],"study_design_scores_gemma":[0.000007817039,0.00011298216,0.001694545,0.0000048603565,0.000016103158,0.00006816787,0.000009749832,0.0010310564,0.9960531,0.0000057314783,0.0009920817,0.000003831447],"about_ca_topic_score_codex":0.0008636745,"about_ca_topic_score_gemma":0.0017515837,"teacher_disagreement_score":0.0011952479,"about_ca_system_score_codex":0.00035716465,"about_ca_system_score_gemma":0.00014158284,"threshold_uncertainty_score":0.003998518},"labels":[],"label_agreement":null},{"id":"W4285399073","doi":"10.1149/ma2022-01191071mtgabs","title":"(Invited) Oxide Electronics and Recent Progress in Bipolar Applications","year":2022,"lang":"en","type":"article","venue":"ECS Meeting Abstracts","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Kootenay Association for Science & Technology","funders":"","keywords":"Materials science; Optoelectronics; Oxide; Thin-film transistor; Electronics; Doping; Semiconductor; X-ray photoelectron spectroscopy; Diode; Transistor; Nanotechnology; Voltage; Electrical engineering; Chemical engineering; Layer (electronics)","score_opus":0.008352205883957459,"score_gpt":0.2104753554576395,"score_spread":0.20212314957368205,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4285399073","genre_codex":"review","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.0037139282,0.6958004,0.0023196717,0.050585527,0.12033658,0.00007479348,0.00032684967,0.00017992419,0.12666228],"genre_scores_gemma":[0.029745832,0.4968097,0.0030205043,0.029092371,0.13656269,0.000098124605,0.00041432734,0.0001851764,0.3040713],"study_design_codex":"not_applicable","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99964356,0.000032511965,0.000023496505,0.00010090645,0.00014942818,0.00005009744],"domain_scores_gemma":[0.9992211,0.00017461041,0.000045502085,0.000016828677,0.00033175197,0.0002101685],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0007611724,0.0008083366,0.00046449216,0.0008695066,0.00054803974,0.0018026353,0.0008364912,0.0026626696,0.042652536],"category_scores_gemma":[0.0011215033,0.00022511714,0.00028337905,0.0009582599,0.00067293365,0.00240575,0.0007869108,0.0024485525,0.019476159],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00018370927,0.00006385249,0.0006797259,0.0018693847,0.000026247451,0.00050974416,0.00018056159,0.00029285115,0.003749149,0.008291252,0.5889828,0.3951706],"study_design_scores_gemma":[0.000007689986,0.000049786486,0.00047387954,0.0001432251,0.000008030458,0.00034525336,0.000075589654,0.000073465715,0.00033211368,0.0014682218,0.99701416,0.000008517797],"about_ca_topic_score_codex":0.00076983345,"about_ca_topic_score_gemma":0.0022089237,"teacher_disagreement_score":0.042652536,"about_ca_system_score_codex":0.00088955055,"about_ca_system_score_gemma":0.0006870823,"threshold_uncertainty_score":0.14268696},"labels":[],"label_agreement":null},{"id":"W4288600186","doi":"","title":"Experimental characterization of porosified silicon micropillars for wick performance enhancement","year":2019,"lang":"en","type":"preprint","venue":"HAL (Le Centre pour la Communication Scientifique Directe)","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Institut interdisciplinaire d'innovation technologique; Université de Sherbrooke","funders":"","keywords":"Characterization (materials science); Materials science; Silicon; Nanotechnology; Optoelectronics","score_opus":0.011243922070751628,"score_gpt":0.20432979992915445,"score_spread":0.19308587785840284,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4288600186","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.96551037,0.0011797947,0.0279042,0.00016122688,0.00014593554,0.000118306256,0.00068960123,0.00036888488,0.003921748],"genre_scores_gemma":[0.9796805,0.00068594253,0.01663554,0.000043546283,0.000029867848,0.0000941684,0.00045698675,0.000108192806,0.0022653511],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9995633,0.000029888875,0.000027500597,0.00010285385,0.0001697024,0.00010677518],"domain_scores_gemma":[0.99896646,0.00035489816,0.0001825834,0.00016717766,0.0002749258,0.00005399323],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00055127405,0.00049348763,0.00028774538,0.000217437,0.00042821068,0.00044894125,0.00047375067,0.0005206532,0.0019935719],"category_scores_gemma":[0.0010277223,0.00034158689,0.00022764075,0.0003139141,0.00042754607,0.00044609717,0.00029350404,0.0005003726,0.00046600442],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00002490313,0.0000092809105,0.000045974193,0.000032033997,0.000002769179,0.00001862547,0.000021808219,0.00011658396,0.9990852,0.000050708768,0.000032808082,0.0005593125],"study_design_scores_gemma":[0.0000021149306,0.00006105982,0.00058065355,0.0000020538841,0.0000032717876,0.000019219975,0.000012528188,0.00046873797,0.9983246,0.000010262205,0.0005113912,0.0000041767303],"about_ca_topic_score_codex":0.00094131153,"about_ca_topic_score_gemma":0.0012091196,"teacher_disagreement_score":0.0019935719,"about_ca_system_score_codex":0.0003878024,"about_ca_system_score_gemma":0.000347168,"threshold_uncertainty_score":0.0066691637},"labels":[],"label_agreement":null},{"id":"W4293101090","doi":"10.1557/s43577-022-00283-9","title":"Correction to: Metal oxide semiconductor thin-film transistor backplanes for displays and imaging","year":2022,"lang":"en","type":"article","venue":"MRS Bulletin","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"IGNIS Innovation (Canada)","funders":"","keywords":"Backplane; Materials science; Thin-film transistor; Optoelectronics; Semiconductor; Transistor; Oxide; Metal; Nanotechnology; Engineering physics; Electrical engineering; Engineering; Metallurgy; Layer (electronics)","score_opus":0.006887637298340952,"score_gpt":0.19099284850536893,"score_spread":0.18410521120702797,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4293101090","genre_codex":"editorial","genre_gemma":"other","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"other","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.00009904293,0.0014899886,0.00063183234,0.021878755,0.9720661,0.000016770702,0.00032009464,0.0003031335,0.0031942423],"genre_scores_gemma":[0.011424153,0.011629112,0.0059210076,0.0911036,0.46271074,0.00017652755,0.0016420396,0.0017794941,0.41361326],"study_design_codex":"not_applicable","study_design_gemma":"not_applicable","domain_scores_codex":[0.99730325,0.00030308613,0.00036650992,0.00039386496,0.0013415503,0.00029166194],"domain_scores_gemma":[0.9835962,0.0027052104,0.000792459,0.0012251509,0.010727539,0.00095349085],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0018505615,0.0024128843,0.0017809998,0.0033774597,0.0028998347,0.0036627268,0.0028401413,0.00794879,0.052015696],"category_scores_gemma":[0.021498049,0.0011711991,0.0015802182,0.0016701381,0.001975743,0.0021866686,0.0012832786,0.011695908,0.033967443],"study_design_candidate":"not_applicable","study_design_consensus":"not_applicable","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000031420106,0.000005795127,0.000027738064,0.000106459935,0.0000076148117,0.00012150097,0.000008356404,0.000041413237,0.00012049762,0.00064676884,0.9930733,0.0058091404],"study_design_scores_gemma":[0.000021320802,0.0000138717,0.00023229717,0.00008290682,0.000015476991,0.00026934352,0.00001827903,0.00017293196,0.0003769944,0.0006290357,0.99815315,0.000014246098],"about_ca_topic_score_codex":0.011625195,"about_ca_topic_score_gemma":0.020356625,"teacher_disagreement_score":0.052015696,"about_ca_system_score_codex":0.0032197163,"about_ca_system_score_gemma":0.0040304237,"threshold_uncertainty_score":0.1740098},"labels":[],"label_agreement":null},{"id":"W4296711682","doi":"10.1364/ao.471243","title":"Deep learning enabled inverse design of nanocrystal-based optical diffusers for efficient white LED lighting","year":2022,"lang":"en","type":"article","venue":"Applied Optics","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":5,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Alberta","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Figure of merit; Optics; Diffuser (optics); Materials science; Luminous flux; Color rendering index; Luminous efficacy; Optoelectronics; Computer science; Light-emitting diode; Layer (electronics); Nanotechnology; Physics","score_opus":0.00972773955602522,"score_gpt":0.1861749792718114,"score_spread":0.17644723971578619,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4296711682","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.20190072,0.000828485,0.7773455,0.0002666171,0.00007873992,0.00007564917,0.000102611935,0.0007805155,0.018621208],"genre_scores_gemma":[0.87831706,0.00023130725,0.11848152,0.00006135407,0.000007336649,0.00007082299,0.00005826352,0.000042204563,0.0027300548],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9999051,0.000008342365,0.000003099273,0.000019316094,0.00004853436,0.000015596293],"domain_scores_gemma":[0.99991214,0.00001933433,0.000020643796,0.000007025574,0.000032246153,0.000008567618],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00020381276,0.0004212196,0.00035047918,0.00014252831,0.00012936078,0.00043368648,0.0005980454,0.00035204252,0.0007511589],"category_scores_gemma":[0.00030926487,0.0002372113,0.00034770925,0.000121801764,0.0002726413,0.00036398857,0.00030959732,0.00046751762,0.00020210035],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000080704805,0.00012708665,0.0009898241,0.00022864279,0.000055507604,0.00013943555,0.00006437576,0.68753105,0.25947377,0.009125729,0.0010007223,0.04118325],"study_design_scores_gemma":[0.0000049268233,0.000031755724,0.000052373318,0.0000035199444,0.0000058229934,0.0000088336665,0.0000027939986,0.98259765,0.01641931,0.00027391376,0.0005948004,0.0000043008886],"about_ca_topic_score_codex":0.0025145544,"about_ca_topic_score_gemma":0.0047618323,"teacher_disagreement_score":0.0025145544,"about_ca_system_score_codex":0.0008408858,"about_ca_system_score_gemma":0.00074346154,"threshold_uncertainty_score":0.006101072},"labels":[],"label_agreement":null},{"id":"W4298141139","doi":"10.1149/10906.0079ecst","title":"Process Development of Amorphous Indium Tin Gallium Oxide (ITGO) Thin Film Transistors","year":2022,"lang":"en","type":"article","venue":"ECS Transactions","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Research & Development Corporation","funders":"","keywords":"Thin-film transistor; Materials science; Subthreshold conduction; Optoelectronics; Subthreshold slope; Indium tin oxide; Wafer; Amorphous solid; Gallium; Sputtering; Indium; Transistor; Thin film; Threshold voltage; Electrical engineering; Layer (electronics); Nanotechnology; Metallurgy; Chemistry; Voltage","score_opus":0.009981385033880654,"score_gpt":0.1973210368838369,"score_spread":0.18733965184995624,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4298141139","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.97188044,0.003005998,0.020770602,0.000113997354,0.00009946525,0.00011346048,0.00021719783,0.00014268707,0.0036561296],"genre_scores_gemma":[0.97056973,0.0025776932,0.02355116,0.000054382574,0.000021975146,0.000051780095,0.00025334096,0.0000403587,0.0028796173],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999329,0.0000043274545,0.000004043371,0.000017597724,0.000026290565,0.000014834139],"domain_scores_gemma":[0.9999455,0.00001041482,0.000012020756,0.000008251753,0.000015497037,0.000008326883],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00010682245,0.00020721897,0.00014041235,0.000117061696,0.0001329041,0.00034430262,0.00024816574,0.00021267695,0.0005661044],"category_scores_gemma":[0.00016064337,0.00012274162,0.00014245535,0.00011657602,0.00010048262,0.000266772,0.0001457772,0.00024209337,0.0002164132],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000008166485,0.0000066815956,0.00011364558,0.00003543525,0.0000019879506,0.00006480822,0.000022600358,0.00009834878,0.99758756,0.000110683795,0.000021673803,0.001928392],"study_design_scores_gemma":[0.0000049903924,0.000116778705,0.0007854228,0.0000054787984,0.000006748273,0.00012623031,0.000021223217,0.0007451443,0.99575317,0.00003777913,0.002394936,0.0000021885671],"about_ca_topic_score_codex":0.0006510411,"about_ca_topic_score_gemma":0.0012882475,"teacher_disagreement_score":0.0006510411,"about_ca_system_score_codex":0.00017908447,"about_ca_system_score_gemma":0.00018003401,"threshold_uncertainty_score":0.0018937588},"labels":[],"label_agreement":null},{"id":"W4306405903","doi":"10.1002/sdtp.15893","title":"18.1: <i>Invited Paper:</i> Large‐Area Low‐Cost MicroLED TV Displays","year":2022,"lang":"en","type":"article","venue":"SID Symposium Digest of Technical Papers","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"OLED; Power consumption; Brightness; Computer science; Consumption (sociology); Computer graphics (images); Power (physics); Electrical engineering; Materials science; Engineering; Optics; Nanotechnology; Art; Physics","score_opus":0.006581631879018612,"score_gpt":0.19755292381062683,"score_spread":0.19097129193160822,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4306405903","genre_codex":"other","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.013785992,0.04336244,0.008574447,0.05290472,0.15409014,0.0009631397,0.001966721,0.0016225441,0.7227298],"genre_scores_gemma":[0.03060702,0.011175122,0.0022982743,0.005912389,0.025289858,0.00015853767,0.0008896038,0.0005430131,0.9231263],"study_design_codex":"not_applicable","study_design_gemma":"not_applicable","domain_scores_codex":[0.9995005,0.00003565018,0.000011964088,0.00008649277,0.00026389214,0.000101476],"domain_scores_gemma":[0.99960643,0.000053003547,0.000021967357,0.0000140823495,0.00021283362,0.00009173672],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0005710285,0.00080030697,0.0003168949,0.0010052775,0.0015922535,0.002341656,0.0007083059,0.002910181,0.053115267],"category_scores_gemma":[0.0007001254,0.00027515448,0.00043633295,0.0005209585,0.00041872103,0.001157354,0.00054887694,0.0017815975,0.023064863],"study_design_candidate":"not_applicable","study_design_consensus":"not_applicable","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00023138008,0.00007414546,0.00029858286,0.00041125529,0.000013082235,0.00044316924,0.00012280537,0.000121806705,0.024900746,0.007910746,0.9146816,0.05079082],"study_design_scores_gemma":[0.00001789067,0.0001246585,0.001054105,0.00008323026,0.00000917618,0.00023491548,0.0000498911,0.00021100286,0.010369585,0.0007693824,0.98705775,0.000018415452],"about_ca_topic_score_codex":0.0016689833,"about_ca_topic_score_gemma":0.00574105,"teacher_disagreement_score":0.053115267,"about_ca_system_score_codex":0.0016276785,"about_ca_system_score_gemma":0.0009715641,"threshold_uncertainty_score":0.17768824},"labels":[],"label_agreement":null},{"id":"W4306407253","doi":"10.1002/sdtp.15870","title":"12.1: <i>Invited Paper:</i> Comprehensive solution for high image quality in medium and large‐size AMOLED displays throughout display usage cycle","year":2022,"lang":"en","type":"article","venue":"SID Symposium Digest of Technical Papers","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"IGNIS Innovation (Canada)","funders":"","keywords":"AMOLED; Compensation (psychology); Computer science; OLED; Pixel; Image quality; Quality (philosophy); Image (mathematics); Key (lock); Display size; Thin-film transistor; Computer vision; Computer graphics (images); Computer hardware; Materials science; Active matrix; Display device; Physics; Nanotechnology","score_opus":0.008462396234706111,"score_gpt":0.2451175525933521,"score_spread":0.236655156358646,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4306407253","genre_codex":"other","genre_gemma":"methods","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"methods","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.1309839,0.020393183,0.17266403,0.0562347,0.06784969,0.00230096,0.0034095724,0.011182239,0.53498167],"genre_scores_gemma":[0.1984587,0.0041692886,0.029558426,0.0048214253,0.007038503,0.0002651458,0.0015578609,0.0011254433,0.75300527],"study_design_codex":"not_applicable","study_design_gemma":"not_applicable","domain_scores_codex":[0.999696,0.000028202287,0.00000880745,0.00006158101,0.00015466177,0.000050772345],"domain_scores_gemma":[0.99960655,0.000030922714,0.000014988525,0.00002259911,0.0002601981,0.000064649954],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0005601827,0.0004686389,0.0002290007,0.0004820787,0.0011247065,0.0013013552,0.0005812597,0.0017983065,0.0199461],"category_scores_gemma":[0.0005542778,0.00021870241,0.00025005132,0.0002855411,0.0002975216,0.0006948807,0.00037325226,0.0010275323,0.008290324],"study_design_candidate":"not_applicable","study_design_consensus":"not_applicable","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00054960215,0.00011941698,0.0013901786,0.00050048,0.000021759022,0.0008207213,0.00033731147,0.00046338863,0.30739254,0.009778587,0.5542433,0.12438274],"study_design_scores_gemma":[0.000048650076,0.00057099364,0.004527599,0.00006970782,0.000027952578,0.0012162102,0.00017231179,0.0032861843,0.20281416,0.0013368403,0.7858569,0.00007255576],"about_ca_topic_score_codex":0.0011227481,"about_ca_topic_score_gemma":0.0037162406,"teacher_disagreement_score":0.0199461,"about_ca_system_score_codex":0.0009496215,"about_ca_system_score_gemma":0.0006473751,"threshold_uncertainty_score":0.06672633},"labels":[],"label_agreement":null},{"id":"W4306930899","doi":"10.26434/chemrxiv-2022-3tvnb","title":"Room-temperature photodeposited amorphous VOx hole-transport layers for organic devices","year":2022,"lang":"en","type":"preprint","venue":"ChemRxiv","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Canadian Light Source (Canada); University of Calgary","funders":"Natural Sciences and Engineering Research Council of Canada; Canadian Institutes of Health Research; University of Calgary; Alberta Innovates; University of Saskatchewan; Canadian Light Source","keywords":"Materials science; OLED; Amorphous solid; Nanocrystalline material; Optoelectronics; Fabrication; Annealing (glass); PEDOT:PSS; Crystallinity; Thin film; Spin coating; Coating; Nanotechnology; Layer (electronics); Composite material; Chemistry","score_opus":0.010128595303593304,"score_gpt":0.20954946815167858,"score_spread":0.19942087284808527,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4306930899","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.963992,0.0037566514,0.024436275,0.00015235998,0.00026254266,0.00008470339,0.0006700443,0.0006064986,0.006038844],"genre_scores_gemma":[0.9843187,0.0011545382,0.01074453,0.00004012627,0.000018033796,0.00004370587,0.00027231453,0.00007959009,0.0033284365],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999157,0.000005594777,0.000005823443,0.00002045189,0.00003485097,0.00001761213],"domain_scores_gemma":[0.99992156,0.000014679184,0.000028107894,0.000014984387,0.000012949368,0.000007688126],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00011201663,0.00027474528,0.00015292485,0.00018720495,0.00011938209,0.00038833014,0.0003605732,0.0002771737,0.0016739172],"category_scores_gemma":[0.00017525844,0.00017297485,0.00016512306,0.00013107866,0.0001273159,0.00025680193,0.0001774334,0.00039994446,0.0006625285],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0000076076326,0.0000058018945,0.00006407146,0.000041261934,0.000002683919,0.00003414421,0.000008380552,0.000058215403,0.99829954,0.0001280577,0.00006814169,0.0012820868],"study_design_scores_gemma":[0.0000017821218,0.000025649526,0.00044044593,0.0000045560882,0.0000033743215,0.00003313975,0.0000073378988,0.0004707571,0.9972319,0.000016888896,0.0017619098,0.0000022492623],"about_ca_topic_score_codex":0.0002616038,"about_ca_topic_score_gemma":0.0007950042,"teacher_disagreement_score":0.0016739172,"about_ca_system_score_codex":0.0003063286,"about_ca_system_score_gemma":0.00011640917,"threshold_uncertainty_score":0.005599797},"labels":[],"label_agreement":null},{"id":"W4307100627","doi":"10.21203/rs.3.rs-2161158/v1","title":" Electro-Optical Characterization of Amorphous Germanium-Tin (Ge1-XSnx) Microbolometer","year":2022,"lang":"en","type":"preprint","venue":"Research Square","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Université de Sherbrooke","funders":"","keywords":"Microbolometer; Materials science; Thin film; Amorphous solid; Tin; Responsivity; Temperature coefficient; Optoelectronics; Analytical Chemistry (journal); Bolometer; Nanotechnology; Optics; Composite material; Photodetector; Metallurgy; Crystallography; Chemistry","score_opus":0.03185417282853036,"score_gpt":0.3082727561458781,"score_spread":0.27641858331734775,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4307100627","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.992525,0.00057831325,0.0050927396,0.00005270264,0.000031223914,0.00001957348,0.00040552457,0.00015381558,0.0011410199],"genre_scores_gemma":[0.9865252,0.0005314303,0.009590953,0.00005913144,0.000009660576,0.00003678073,0.00032087043,0.000023376579,0.0029026652],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99990594,0.000007643674,0.0000051312454,0.000023896975,0.000046872774,0.000010562484],"domain_scores_gemma":[0.9998355,0.00005670806,0.00003698724,0.000012562738,0.00004961571,0.0000087274275],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00012985476,0.00017803909,0.00013997481,0.0002686695,0.00011866174,0.00023632478,0.00030689634,0.00027841,0.00086634245],"category_scores_gemma":[0.00024679198,0.0000971593,0.000120150566,0.00017960588,0.00010938377,0.00015187814,0.00009819102,0.00016951562,0.0002365617],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000025678659,0.000008993749,0.0007847253,0.000034141583,0.0000039335355,0.000055476325,0.00002963425,0.00007085442,0.9970335,0.00004438491,0.00007267011,0.0018360052],"study_design_scores_gemma":[0.0000027588273,0.00010813052,0.011531299,0.000005480433,0.000009474886,0.00010646852,0.000040767558,0.0018072199,0.9851371,0.000014467591,0.0012314664,0.0000053678245],"about_ca_topic_score_codex":0.00054431544,"about_ca_topic_score_gemma":0.0010923466,"teacher_disagreement_score":0.00086634245,"about_ca_system_score_codex":0.00020520088,"about_ca_system_score_gemma":0.00007695052,"threshold_uncertainty_score":0.0028982162},"labels":[],"label_agreement":null},{"id":"W4309001747","doi":"10.3390/electronics11223719","title":"Resolving the Unusual Gate Leakage Currents of Thin-Film Transistors with Single-Walled Carbon-Nanotube-Based Active Layers","year":2022,"lang":"en","type":"article","venue":"Electronics","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":3,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McGill University","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Materials science; Thin-film transistor; Leakage (economics); Carbon nanotube; Optoelectronics; Active layer; Transistor; Gate oxide; Fabrication; Electrode; Threshold voltage; Gate dielectric; Layer (electronics); Dielectric; Voltage; Nanotechnology; Electrical engineering","score_opus":0.008959282849478693,"score_gpt":0.18679157322004714,"score_spread":0.17783229037056844,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4309001747","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9775417,0.0009583641,0.020470716,0.00009561178,0.000028082615,0.000015069863,0.00006789706,0.00011237943,0.00071011257],"genre_scores_gemma":[0.98520494,0.0006898086,0.013496675,0.000052550015,0.000017443646,0.000014329087,0.00009213856,0.000025038586,0.00040712082],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99990284,0.000010049458,0.0000098848295,0.000020789013,0.000039056016,0.00001730801],"domain_scores_gemma":[0.9997837,0.00008473989,0.000050847015,0.000021551758,0.00004393079,0.000015203287],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00012885798,0.00024422302,0.00023143471,0.0001719579,0.0001471962,0.0003580982,0.00024931453,0.0004125882,0.00029250482],"category_scores_gemma":[0.00033611574,0.00014213065,0.00019684595,0.0001494825,0.00028745228,0.00043256552,0.0001257739,0.00037713084,0.0001277866],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000007089235,0.0000024139076,0.000113538925,0.000019282985,0.0000029726168,0.00003813759,0.0000089438745,0.000044600078,0.9991141,0.000037098383,0.000007022243,0.0006047592],"study_design_scores_gemma":[0.0000018802903,0.000041622898,0.0009704827,0.0000015057306,0.000008264933,0.00013508486,0.000008487317,0.0006774292,0.9978399,0.000041079245,0.00027221302,0.0000020260582],"about_ca_topic_score_codex":0.00020873973,"about_ca_topic_score_gemma":0.000601651,"teacher_disagreement_score":0.0004125882,"about_ca_system_score_codex":0.00016488534,"about_ca_system_score_gemma":0.00012983842,"threshold_uncertainty_score":0.0011963248},"labels":[],"label_agreement":null},{"id":"W4309814885","doi":"10.1149/ma2022-02351282mtgabs","title":"Process Development of Amorphous Indium Tin Gallium Oxide (ITGO) Thin Film Transistors","year":2022,"lang":"en","type":"article","venue":"ECS Meeting Abstracts","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Research & Development Corporation","funders":"","keywords":"Thin-film transistor; Materials science; Optoelectronics; Amorphous solid; Subthreshold slope; Oxide thin-film transistor; Indium tin oxide; Transistor; Wafer; Threshold voltage; Thin film; Nanotechnology; Electrical engineering; Layer (electronics); Voltage; Chemistry","score_opus":0.01170973832064866,"score_gpt":0.2053153633011353,"score_spread":0.19360562498048664,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4309814885","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.89705366,0.011517055,0.0758018,0.00033154976,0.00041163366,0.00032709094,0.00073087914,0.0005040542,0.013322312],"genre_scores_gemma":[0.92287785,0.006720401,0.06551125,0.0000961022,0.00004303756,0.00013513528,0.0004299916,0.00005993208,0.0041262936],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999186,0.0000040488003,0.00000456175,0.000022889242,0.00003621834,0.000013766793],"domain_scores_gemma":[0.99995303,0.000007680958,0.000010092946,0.0000057112275,0.000016376516,0.000007076065],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00010368076,0.00026222633,0.0001784725,0.0002277124,0.00014876825,0.00039716388,0.0003332489,0.0003284953,0.00048632582],"category_scores_gemma":[0.00016434741,0.00016587421,0.00020841557,0.00025934537,0.00012394103,0.00031853508,0.0001596581,0.00034360844,0.0003146545],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000012321113,0.00001236949,0.00014942847,0.00009680259,0.000003747006,0.00012975749,0.000044992405,0.00031238067,0.99369824,0.00041426995,0.00007396236,0.0050516105],"study_design_scores_gemma":[0.000010220786,0.00017997573,0.0011478022,0.000017333577,0.000012373192,0.00021220771,0.000034140026,0.0022001695,0.9891794,0.00016662045,0.006833194,0.000006618681],"about_ca_topic_score_codex":0.0007807844,"about_ca_topic_score_gemma":0.0012188137,"teacher_disagreement_score":0.0007807844,"about_ca_system_score_codex":0.00022004652,"about_ca_system_score_gemma":0.0001909688,"threshold_uncertainty_score":0.0016269088},"labels":[],"label_agreement":null},{"id":"W4312381555","doi":"10.1109/iscas48785.2022.9937808","title":"Resolving Unusual Gate Current and Dielectric Breakdown of Solution Processed Carbon Nanotube Thin Film Transistor","year":2022,"lang":"en","type":"article","venue":"2022 IEEE International Symposium on Circuits and Systems (ISCAS)","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":4,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McGill University","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Thin-film transistor; Dielectric; Materials science; Transistor; Gate dielectric; Leakage (economics); Optoelectronics; Carbon nanotube; Fabrication; Active layer; Nanotechnology; Layer (electronics); Electrical engineering; Voltage","score_opus":0.015115419968243135,"score_gpt":0.22125774132025025,"score_spread":0.2061423213520071,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4312381555","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.98709327,0.00084820023,0.009750071,0.00020407548,0.00004630676,0.0000125072675,0.00007921061,0.00013574291,0.0018305642],"genre_scores_gemma":[0.99422,0.0003563013,0.0038798603,0.0000727187,0.000015584685,0.000011695377,0.00013581768,0.000028050212,0.0012799616],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99989855,0.000008414365,0.0000065371414,0.000018950946,0.000049508515,0.000018035325],"domain_scores_gemma":[0.99986124,0.000038807942,0.000026958003,0.00001335297,0.00004292637,0.000016788965],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00009550157,0.00018646047,0.00017687562,0.0001242814,0.00014868173,0.0002704993,0.00027464758,0.00060457626,0.0006474448],"category_scores_gemma":[0.0003256618,0.00011212466,0.00015395737,0.000116893694,0.00019752995,0.00034654108,0.0001620058,0.0004936318,0.0002092401],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000021975738,0.000005516295,0.00019029675,0.00002093373,0.0000034084487,0.00022540895,0.000024347624,0.00008004083,0.9978254,0.00014741895,0.000064804764,0.001390411],"study_design_scores_gemma":[0.0000056847025,0.0001291005,0.0012633431,0.0000023901594,0.0000061216733,0.00082480285,0.000031839263,0.0022310459,0.9942473,0.00017277432,0.0010817341,0.0000038693947],"about_ca_topic_score_codex":0.00020723417,"about_ca_topic_score_gemma":0.0002874043,"teacher_disagreement_score":0.0006474448,"about_ca_system_score_codex":0.00022646482,"about_ca_system_score_gemma":0.00011372175,"threshold_uncertainty_score":0.0021659732},"labels":[],"label_agreement":null},{"id":"W4319439262","doi":"10.1007/s10762-023-00909-2","title":"Electro-Optical Characterization of an Amorphous Germanium-Tin (Ge1-XSnx) Microbolometer","year":2023,"lang":"en","type":"article","venue":"Journal of Infrared Millimeter and Terahertz Waves","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":3,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Université de Sherbrooke","funders":"","keywords":"Microbolometer; Materials science; Thin film; Amorphous solid; Tin; Responsivity; Temperature coefficient; Optoelectronics; Sheet resistance; Analytical Chemistry (journal); Bolometer; Nanotechnology; Optics; Composite material; Photodetector; Metallurgy; Layer (electronics); Crystallography; Chemistry","score_opus":0.007289858496045255,"score_gpt":0.1994343605000413,"score_spread":0.19214450200399605,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4319439262","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9861951,0.00050520996,0.009950412,0.0002678154,0.000100356294,0.00005630128,0.00042404185,0.00037868725,0.002122128],"genre_scores_gemma":[0.98841184,0.00020732949,0.006626118,0.00010988066,0.000019749614,0.00003609801,0.00016513203,0.000031265252,0.004392524],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9997657,0.000020523083,0.000012315064,0.000058300677,0.00011268861,0.000030517946],"domain_scores_gemma":[0.99954647,0.00016235319,0.00008024222,0.000049809896,0.00012354749,0.000037578764],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00024998194,0.00021152041,0.00020693484,0.00035910102,0.0002479765,0.0004885866,0.0008988831,0.00042072718,0.0012246969],"category_scores_gemma":[0.0005017471,0.00016198416,0.00013376561,0.00021646274,0.00020452017,0.0003531217,0.00018135255,0.00022412579,0.00041412402],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000060832477,0.000024435158,0.0006683544,0.000028640346,0.000007164185,0.00008278552,0.000044042215,0.000065549335,0.99713194,0.0001623346,0.00018273543,0.0015411084],"study_design_scores_gemma":[0.000015037282,0.00026728545,0.008031185,0.000008631101,0.00001975818,0.0001482084,0.000061515595,0.0048151505,0.98357177,0.000033826855,0.0030172856,0.000010323969],"about_ca_topic_score_codex":0.0010034359,"about_ca_topic_score_gemma":0.0018925392,"teacher_disagreement_score":0.0012246969,"about_ca_system_score_codex":0.000416403,"about_ca_system_score_gemma":0.00028797647,"threshold_uncertainty_score":0.0040970445},"labels":[],"label_agreement":null},{"id":"W4362705822","doi":"10.1016/j.solener.2023.03.045","title":"Comparison of random upright pyramids and inverted pyramid photonic crystals in thin crystalline silicon solar cells: An optical and morphological study","year":2023,"lang":"en","type":"article","venue":"Solar Energy","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":18,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Toronto","funders":"Natural Sciences and Engineering Research Council of Canada; University of Toronto; Ontario Research Foundation; CMC Microsystems","keywords":"Materials science; Photonic crystal; Optoelectronics; Silicon; Optical path length; Crystalline silicon; Photocurrent; Absorption (acoustics); Optics; Photonics; Wavelength; Pyramid (geometry); Etching (microfabrication); Nanotechnology; Physics","score_opus":0.020357161988657824,"score_gpt":0.25610595226871397,"score_spread":0.23574879028005613,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4362705822","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.996102,0.00018348743,0.000759701,0.000021004049,0.000006818704,0.000007049492,0.0000758283,0.000011681041,0.0028324751],"genre_scores_gemma":[0.99847156,0.00013495062,0.0007914533,0.000006276328,0.0000022453437,0.0000031805732,0.00006836323,0.000004083703,0.0005177354],"study_design_codex":"bench_or_experimental","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99992585,0.0000050367507,0.000002705596,0.000011902251,0.000040711107,0.0000136730005],"domain_scores_gemma":[0.9998733,0.000032442556,0.000025401489,0.000012679173,0.00004397111,0.000012239589],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000066495486,0.0000791551,0.00008956926,0.00019345336,0.00022518843,0.00043948856,0.00019186146,0.00017819754,0.0008498629],"category_scores_gemma":[0.0002552312,0.00011877993,0.0001142135,0.00024719327,0.00024148893,0.00021424514,0.00010354925,0.0001347564,0.00007939398],"study_design_candidate":"simulation_or_modeling","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00015146058,0.000057750283,0.0024243006,0.00007974624,0.000018541408,0.00019768166,0.000052979478,0.0027790996,0.9879991,0.00222316,0.00022135707,0.0037948275],"study_design_scores_gemma":[0.00004246595,0.00034484017,0.02714086,0.000012920184,0.000060275754,0.0006073692,0.0005125819,0.07174288,0.89679426,0.0007361278,0.001980363,0.00002516641],"about_ca_topic_score_codex":0.0031493006,"about_ca_topic_score_gemma":0.004224192,"teacher_disagreement_score":0.0031493006,"about_ca_system_score_codex":0.00026388714,"about_ca_system_score_gemma":0.00028939723,"threshold_uncertainty_score":0.006261945},"labels":[],"label_agreement":null},{"id":"W4380634740","doi":"10.2139/ssrn.4478405","title":"Enhanced Stability Under Positive Bias Temperature Stress of Ln-Doped Inzno Thin Film Transistors Fabricated with a Back-Channel-Etch Structure","year":2023,"lang":"en","type":"preprint","venue":"SSRN Electronic Journal","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Toronto","funders":"","keywords":"Materials science; Thin-film transistor; Optoelectronics; Doping; Channel (broadcasting); Transistor; Stress (linguistics); Thin film; Nanotechnology; Electrical engineering; Layer (electronics); Voltage; Engineering","score_opus":0.014542038556922418,"score_gpt":0.21235752463530222,"score_spread":0.1978154860783798,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4380634740","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99894243,0.00017762394,0.000331049,0.000040771687,0.000033308283,0.0000034850648,0.000094792405,0.000039334165,0.00033707422],"genre_scores_gemma":[0.9987489,0.00010358705,0.00026876357,0.000011786257,0.000009400248,0.0000044130147,0.00006200886,0.000013589776,0.0007775745],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99989736,0.000006747076,0.0000064343603,0.000032312415,0.000028241586,0.000028911427],"domain_scores_gemma":[0.9997123,0.00008413122,0.000065214685,0.000030632422,0.000066388646,0.00004138705],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00012256292,0.0002213919,0.0002927897,0.00022598683,0.00025675737,0.00050754944,0.00039700224,0.00038537578,0.0013825288],"category_scores_gemma":[0.00048450695,0.00016859423,0.0001191402,0.00019832294,0.00029854904,0.00034257566,0.00017816696,0.00028709267,0.00025304657],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00011230467,0.000008317944,0.00032627137,0.0000231065,0.00000586676,0.000058495003,0.000056243203,0.00007087913,0.9988072,0.000036600242,0.000027405025,0.0004673996],"study_design_scores_gemma":[0.000013710266,0.00011238735,0.0048843967,0.000007077836,0.000023579449,0.000063521504,0.000053907224,0.0012882508,0.99321884,0.0000232014,0.00030516504,0.000005984119],"about_ca_topic_score_codex":0.0015454376,"about_ca_topic_score_gemma":0.0024809819,"teacher_disagreement_score":0.0015454376,"about_ca_system_score_codex":0.00028490828,"about_ca_system_score_gemma":0.0002329403,"threshold_uncertainty_score":0.0046250224},"labels":[],"label_agreement":null},{"id":"W4386098347","doi":"10.1116/6.0002896","title":"Mechanical and optical properties of amorphous silicon nitride-based films prepared by electron cyclotron resonance plasma-enhanced chemical vapor deposition","year":2023,"lang":"en","type":"article","venue":"Journal of Vacuum Science & Technology A Vacuum Surfaces and Films","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":8,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McMaster University","funders":"Natural Sciences and Engineering Research Council of Canada; Ontario Research Foundation","keywords":"Materials science; Nanoindentation; Electron cyclotron resonance; Thin film; Optoelectronics; Plasma-enhanced chemical vapor deposition; Chemical vapor deposition; Silicon nitride; Silicon oxynitride; Solar cell; Composite material; Silicon; Nanotechnology; Plasma","score_opus":0.007237858091151174,"score_gpt":0.20498177019859565,"score_spread":0.19774391210744446,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4386098347","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9985612,0.00038129266,0.0003873302,0.000015439422,0.000010727835,0.000006902237,0.00015200788,0.000012780349,0.00047230395],"genre_scores_gemma":[0.9969997,0.00044592208,0.00123956,0.00001479607,0.0000053578515,0.000016362255,0.00022538657,0.000012367425,0.0010404896],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999069,0.0000048304646,0.000007173237,0.00002203528,0.00004410388,0.000014945577],"domain_scores_gemma":[0.9998709,0.00002756823,0.000044505407,0.000010450785,0.000033603,0.000013054229],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00013504182,0.0003025364,0.00012934796,0.00022457734,0.00013884727,0.00015285605,0.00017055064,0.00022500836,0.0007374022],"category_scores_gemma":[0.00016761727,0.00019100268,0.00014544994,0.00022357405,0.00015775047,0.00014511649,0.000093753595,0.0002738869,0.00010747412],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0000142470535,0.0000064651317,0.0002070122,0.000025950923,0.0000029600628,0.000027639871,0.00001883404,0.00007382459,0.99916303,0.000014259858,0.000015250584,0.00043049568],"study_design_scores_gemma":[0.000006110731,0.00022564988,0.013208863,0.0000063149123,0.0000135418595,0.000060084792,0.000050199324,0.0011199157,0.98466784,0.000010440235,0.00062356266,0.0000075043517],"about_ca_topic_score_codex":0.0007918763,"about_ca_topic_score_gemma":0.001967149,"teacher_disagreement_score":0.0007918763,"about_ca_system_score_codex":0.00014445547,"about_ca_system_score_gemma":0.000103084036,"threshold_uncertainty_score":0.0024668574},"labels":[],"label_agreement":null},{"id":"W4386128263","doi":"10.1109/pn58661.2023.10222997","title":"Excess noise characterization of all-silicon avalanche photodetectors for telecommunication bandwidths","year":2023,"lang":"en","type":"article","venue":"","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McMaster University","funders":"","keywords":"Avalanche photodiode; Photodetector; Bandwidth (computing); Silicon; Optoelectronics; Materials science; Noise (video); Avalanche diode; Single-photon avalanche diode; Optics; Physics; Detector; Telecommunications; Electrical engineering; Computer science; Engineering","score_opus":0.02017443212783176,"score_gpt":0.23731028349719085,"score_spread":0.2171358513693591,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4386128263","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.95351183,0.0011879524,0.042250868,0.000039590217,0.000013028528,0.000019382685,0.00025132613,0.00035560998,0.0023704392],"genre_scores_gemma":[0.99439263,0.00020648332,0.0045131044,0.000015390518,0.0000040343157,0.000009812345,0.00015820729,0.00003022366,0.00067013747],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9996675,0.000030803945,0.000019250163,0.000060132075,0.00019100477,0.000031179276],"domain_scores_gemma":[0.99936026,0.00027694346,0.00007798575,0.000058122736,0.00019807229,0.000028471655],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0003851668,0.00033866774,0.00023066877,0.0008158976,0.00017139707,0.00041925703,0.00044309488,0.0003061269,0.0008023378],"category_scores_gemma":[0.0009032531,0.0001419144,0.00019282963,0.00060507085,0.0002042339,0.0003579876,0.00015489933,0.00020811394,0.00024302931],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00026736592,0.000031181502,0.007470423,0.00008628689,0.000038053684,0.00019397009,0.000104997176,0.0044786325,0.9715257,0.0007734527,0.0001559426,0.014873835],"study_design_scores_gemma":[0.000013597814,0.0003684924,0.03387403,0.00003037043,0.000054844626,0.0007106515,0.0000905412,0.060268648,0.9018454,0.00055307394,0.0021556932,0.000034792345],"about_ca_topic_score_codex":0.0009517628,"about_ca_topic_score_gemma":0.0014923492,"teacher_disagreement_score":0.0009517628,"about_ca_system_score_codex":0.00039621902,"about_ca_system_score_gemma":0.00018242035,"threshold_uncertainty_score":0.0028747916},"labels":[],"label_agreement":null},{"id":"W4386296818","doi":"10.1002/sdtp.16560","title":"25‐2: Subpixel Optimization in AMOLED Displays by Self‐assembled Patterning of a Secondary Cathode","year":2023,"lang":"en","type":"article","venue":"SID Symposium Digest of Technical Papers","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"OTI Lumionics (Canada)","funders":"","keywords":"Subpixel rendering; AMOLED; Cathode; Materials science; Optoelectronics; Pixel; Nanotechnology; Computer science; Layer (electronics); Artificial intelligence; Electrical engineering; Engineering; Active matrix","score_opus":0.004681475095099016,"score_gpt":0.1996283314210967,"score_spread":0.19494685632599767,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4386296818","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.97596186,0.00051364495,0.018429272,0.00008104413,0.000042571515,0.000033932236,0.00012665923,0.00042125268,0.004389795],"genre_scores_gemma":[0.95157766,0.00035316808,0.042293526,0.00006318497,0.000020532414,0.00007129841,0.00018677022,0.00022021901,0.00521364],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998766,0.0000097200445,0.00000532836,0.000031984007,0.000052543113,0.000023739547],"domain_scores_gemma":[0.9999199,0.000014656834,0.000022670249,0.0000070200026,0.000021385054,0.0000144861315],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00011492746,0.0004178974,0.0002699505,0.00018773315,0.00020931552,0.00045781143,0.00041559243,0.00028858936,0.0011560109],"category_scores_gemma":[0.00014077565,0.00021510113,0.00018789648,0.00013863944,0.00013695836,0.00021025505,0.00032719475,0.00032130972,0.00047373888],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000015271527,0.000011110696,0.00008384551,0.000014671673,0.000002527635,0.000031108397,0.00001154562,0.00022106385,0.99837923,0.00006106578,0.00006177524,0.0011067275],"study_design_scores_gemma":[0.0000060365014,0.000081456106,0.0011323711,0.000001888167,0.0000046580412,0.00007717546,0.0000066052635,0.0023206577,0.9950846,0.00002292602,0.0012572611,0.000004462411],"about_ca_topic_score_codex":0.00033216635,"about_ca_topic_score_gemma":0.00087717606,"teacher_disagreement_score":0.0011560109,"about_ca_system_score_codex":0.0003435529,"about_ca_system_score_gemma":0.00016499132,"threshold_uncertainty_score":0.003867209},"labels":[],"label_agreement":null},{"id":"W4389237336","doi":"10.3390/coatings13122030","title":"High-Rate Epitaxial Growth of Silicon Using Electron Beam Evaporation at High Temperatures","year":2023,"lang":"en","type":"article","venue":"Coatings","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":2,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"","funders":"Institute of Gender and Health; Norges Forskningsråd; Universitetet i Oslo","keywords":"Materials science; Wafer; Ingot; Raman spectroscopy; Silicon; Evaporation; Electron beam physical vapor deposition; Analytical Chemistry (journal); Electron backscatter diffraction; Crystallinity; Microstructure; Chemical vapor deposition; Optoelectronics; Composite material; Optics; Chemistry","score_opus":0.010210456606570785,"score_gpt":0.21109545513842895,"score_spread":0.20088499853185818,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4389237336","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.92881554,0.0042212703,0.056671996,0.00014939476,0.0001224057,0.00013905721,0.00060115586,0.00032335534,0.008955753],"genre_scores_gemma":[0.9248374,0.0038946683,0.06598964,0.00004278323,0.0000281008,0.000053613956,0.000388942,0.00007529982,0.0046895207],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998983,0.000007647947,0.000008675719,0.000023243838,0.000046876485,0.000015209816],"domain_scores_gemma":[0.9999317,0.000020227768,0.000016574862,0.000012984472,0.0000132570685,0.0000053079807],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00013905768,0.00030085834,0.00022085113,0.00015636836,0.00012617873,0.00027992338,0.0003799624,0.00019909788,0.0005306549],"category_scores_gemma":[0.00017748433,0.0002170865,0.00016875828,0.00019249418,0.00017096747,0.00036420586,0.00023099358,0.00033187956,0.00029735288],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000008255874,0.000004031573,0.00014992824,0.00005760553,0.0000052839505,0.000053868647,0.000016267286,0.00016162636,0.9975725,0.00015553036,0.000052006588,0.0017632479],"study_design_scores_gemma":[0.0000066907837,0.000048094964,0.0019752502,0.000006861147,0.0000063509237,0.00021989734,0.0000121481635,0.0019089677,0.9927804,0.000059256854,0.0029695118,0.0000064518536],"about_ca_topic_score_codex":0.0006252802,"about_ca_topic_score_gemma":0.002000916,"teacher_disagreement_score":0.0006252802,"about_ca_system_score_codex":0.00018445977,"about_ca_system_score_gemma":0.00017673755,"threshold_uncertainty_score":0.0017752647},"labels":[],"label_agreement":null},{"id":"W4391248441","doi":"10.1109/tcsi.2024.3353777","title":"Low-Power Row Driver for Digitally Driven OLEDoS Microdisplay","year":2024,"lang":"en","type":"article","venue":"IEEE Transactions on Circuits and Systems I Regular Papers","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":6,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Power (physics); Computer science; Computer hardware; Embedded system; Physics","score_opus":0.008060697891740944,"score_gpt":0.19555750876605438,"score_spread":0.18749681087431344,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4391248441","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.738207,0.0023514607,0.22887352,0.0009609754,0.00078810274,0.00033127482,0.0009751809,0.0071718474,0.020340595],"genre_scores_gemma":[0.95266676,0.00045935827,0.031609036,0.00028027518,0.00005785659,0.000085007436,0.00021083992,0.00019218387,0.014438693],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998543,0.000008466038,0.000006257879,0.000032575874,0.00007538741,0.000022969596],"domain_scores_gemma":[0.999806,0.000039927578,0.000040393606,0.000028672683,0.00006917214,0.00001584627],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00011050986,0.00032387185,0.0002092878,0.0001996286,0.00016716939,0.00046070493,0.0012221134,0.00027961878,0.0036396147],"category_scores_gemma":[0.00029240668,0.00014404791,0.00015879043,0.0001360021,0.00014941608,0.0006428935,0.00028264997,0.00035852226,0.0010458755],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00011862687,0.000046394834,0.0005868289,0.00016699854,0.000022279937,0.00022078585,0.00009635417,0.00039757564,0.9668796,0.0020224494,0.0026893711,0.0267528],"study_design_scores_gemma":[0.000019468802,0.00033452405,0.0012387949,0.000021354073,0.000022034508,0.0004511901,0.000053928645,0.008251358,0.9729225,0.00027614768,0.016388586,0.000020077176],"about_ca_topic_score_codex":0.00040770601,"about_ca_topic_score_gemma":0.0011970475,"teacher_disagreement_score":0.0036396147,"about_ca_system_score_codex":0.00047871668,"about_ca_system_score_gemma":0.0003018657,"threshold_uncertainty_score":0.012175679},"labels":[],"label_agreement":null},{"id":"W4391256406","doi":"10.1063/5.0174799","title":"Cross-sectional profile of photocarrier mobility in thin-film solar cells via multimolecular recombination and charge extraction by linearly increasing voltage (cs-p-CELIV)","year":2024,"lang":"en","type":"article","venue":"Journal of Applied Physics","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Western University","funders":"Canada Foundation for Innovation; Natural Sciences and Engineering Research Council of Canada; Canada Research Chairs","keywords":"Photovoltaics; Materials science; Electron mobility; Optoelectronics; Organic solar cell; Carrier lifetime; Solar cell; Thin film; Silicon; Photovoltaic system; Optics; Nanotechnology; Physics; Polymer; Electrical engineering","score_opus":0.007320771834906629,"score_gpt":0.23158682886316068,"score_spread":0.22426605702825406,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4391256406","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9941864,0.00043271683,0.004606427,0.000028426273,0.0000039231563,0.000010025739,0.00014532275,0.00009965698,0.00048707513],"genre_scores_gemma":[0.99277884,0.000300737,0.0064318194,0.000014694924,0.0000024365831,0.000018495995,0.000092419665,0.000014789417,0.0003456954],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999349,0.0000054046363,0.0000035634716,0.000023003653,0.00001998714,0.000013037571],"domain_scores_gemma":[0.9998323,0.000052968975,0.000049710798,0.00001753048,0.00003469463,0.00001278587],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000114425864,0.0002086683,0.00013334255,0.00032341984,0.00012934388,0.00026840885,0.00033726922,0.00023293366,0.00044861098],"category_scores_gemma":[0.00019668892,0.00015716118,0.00012244447,0.00019895365,0.00022186799,0.00023468943,0.00019037555,0.00031661586,0.00011121031],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000020880625,0.000005982291,0.00036005565,0.000011849151,0.00000225174,0.00002428058,0.000021912674,0.0001450751,0.9981248,0.000049375325,0.000013072708,0.0012205364],"study_design_scores_gemma":[0.0000033946264,0.000039183276,0.0029706352,0.000002504091,0.000004976495,0.000073475516,0.000024164972,0.0024277025,0.9942472,0.000023772638,0.00017746526,0.000005437318],"about_ca_topic_score_codex":0.0011643071,"about_ca_topic_score_gemma":0.001188387,"teacher_disagreement_score":0.0011643071,"about_ca_system_score_codex":0.0003539142,"about_ca_system_score_gemma":0.00018578593,"threshold_uncertainty_score":0.0025678873},"labels":[],"label_agreement":null},{"id":"W4391690328","doi":"10.1002/smll.202309877","title":"20 µm Micro‐LEDs Mass Transfer via Laser‐Induced In Situ Nanoparticles Resonance Enhancement","year":2024,"lang":"en","type":"article","venue":"Small","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":13,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Ministry of Education and Child Care","funders":"National Key Research and Development Program of China; National Natural Science Foundation of China","keywords":"Light-emitting diode; Materials science; Optoelectronics; Laser; Picosecond; Nanoparticle; Photonics; Resonance (particle physics); Ultrashort pulse; Thermal; Nanotechnology; Optics","score_opus":0.01445684530403473,"score_gpt":0.20411866093558811,"score_spread":0.18966181563155338,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4391690328","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9815979,0.0002287794,0.015395094,0.000045368513,0.000026840915,0.000021259375,0.000053113654,0.00037271052,0.0022590219],"genre_scores_gemma":[0.9887839,0.00011617234,0.008729165,0.000014127673,0.000007162561,0.0000252777,0.000036551693,0.000039580307,0.0022480323],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99992704,0.0000052142586,0.000003875396,0.000028198154,0.000022153848,0.000013438731],"domain_scores_gemma":[0.99991226,0.000026548196,0.000024527395,0.000017495571,0.000012225472,0.000006842268],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00009639731,0.00028095464,0.00014570174,0.00010717977,0.00011715728,0.00020351408,0.0003065752,0.00016727748,0.0012359692],"category_scores_gemma":[0.00014244122,0.00012926386,0.00014081164,0.00006795831,0.0002028521,0.00027337845,0.00023276317,0.00024295077,0.00026430536],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000008497504,0.000006463727,0.00005507198,0.000013592342,0.0000012927848,0.000016972208,0.000022012486,0.00014845222,0.998444,0.0000700363,0.00002889221,0.0011847443],"study_design_scores_gemma":[0.0000017985021,0.000028695902,0.0002592475,6.943001e-7,0.000002022992,0.000019819128,0.0000068053846,0.0014978625,0.99752766,0.000020039888,0.0006339664,0.0000013930987],"about_ca_topic_score_codex":0.00023445883,"about_ca_topic_score_gemma":0.0003672883,"teacher_disagreement_score":0.0012359692,"about_ca_system_score_codex":0.00030222823,"about_ca_system_score_gemma":0.00007951014,"threshold_uncertainty_score":0.0041347146},"labels":[],"label_agreement":null},{"id":"W4391735049","doi":"10.1063/5.0186959","title":"Raman-based mapping and depth-profiling of the relaxation state in amorphous silicon","year":2024,"lang":"en","type":"article","venue":"Journal of Applied Physics","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Polytechnique Montréal; Université de Montréal","funders":"Fonds de recherche du Québec – Nature et technologies; Natural Sciences and Engineering Research Council of Canada","keywords":"Raman spectroscopy; Materials science; Silicon; Amorphous solid; Amorphous silicon; Molecular physics; Analytical Chemistry (journal); Crystalline silicon; Optoelectronics; Optics; Crystallography; Chemistry","score_opus":0.01070893671918927,"score_gpt":0.19946028554697412,"score_spread":0.18875134882778485,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4391735049","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99043745,0.00033160517,0.0077281124,0.000038439644,0.0000074678287,0.000013262055,0.00014077986,0.00007901735,0.0012239648],"genre_scores_gemma":[0.98708653,0.00026124308,0.01143976,0.000020088406,0.000006920725,0.000015779213,0.000101653146,0.000013221295,0.0010547362],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999151,0.000006656053,0.0000026067091,0.000026723037,0.000031292522,0.000017551956],"domain_scores_gemma":[0.9998754,0.000035878602,0.000033382406,0.000017244729,0.00002430814,0.000013744279],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00009608729,0.00026798542,0.0001436893,0.00021983241,0.00014157758,0.00019086704,0.00031118258,0.00027237448,0.00067562005],"category_scores_gemma":[0.00016446123,0.00016894311,0.0001375056,0.00015475364,0.00030532447,0.00022999915,0.0002503989,0.00029806414,0.00016059924],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000022116456,0.000009672621,0.00034354237,0.000013163372,0.0000021802214,0.000015984699,0.000022277165,0.00024877122,0.99793845,0.00007451188,0.000016197771,0.0012931947],"study_design_scores_gemma":[0.000010428515,0.00020887885,0.010869739,0.000005178486,0.000009071033,0.00015237255,0.0000752166,0.01019332,0.9777724,0.00011546601,0.00057307165,0.0000147821],"about_ca_topic_score_codex":0.0011345035,"about_ca_topic_score_gemma":0.0019505435,"teacher_disagreement_score":0.0011345035,"about_ca_system_score_codex":0.00017699237,"about_ca_system_score_gemma":0.0001556448,"threshold_uncertainty_score":0.0022601485},"labels":[],"label_agreement":null},{"id":"W4391951352","doi":"10.36227/techrxiv.170846578.88014136/v1","title":"Compact Modeling of Hysteresis in Organic Thin-Film Transistors","year":2024,"lang":"en","type":"preprint","venue":"","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McMaster University","funders":"","keywords":"Hysteresis; Thin-film transistor; Materials science; Transistor; Thin film; Optoelectronics; Engineering physics; Condensed matter physics; Nanotechnology; Electrical engineering; Physics; Engineering; Voltage; Layer (electronics)","score_opus":0.020479478512719765,"score_gpt":0.2219691543798562,"score_spread":0.20148967586713645,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4391951352","genre_codex":"methods","genre_gemma":"methods","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"methods","genre_consensus":"methods","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.23628907,0.0012064042,0.74880815,0.00023282839,0.00006537788,0.00008177941,0.00040061297,0.0006184899,0.0122972615],"genre_scores_gemma":[0.96608233,0.00079918327,0.026957193,0.00004182707,0.000023538452,0.0001497705,0.00018611565,0.000077690274,0.0056822756],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99993396,0.000009666559,0.000003048339,0.000014206916,0.000029704985,0.000009443155],"domain_scores_gemma":[0.999864,0.00007380489,0.000017357637,0.000017532691,0.000020385094,0.000006882407],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000118553166,0.0003584944,0.00039079232,0.00026577708,0.00016565814,0.00045812354,0.00077709305,0.00076364767,0.0009146002],"category_scores_gemma":[0.0005388539,0.00016508701,0.00041145293,0.00023934888,0.00034744502,0.00060448435,0.00022314003,0.00034243264,0.00018809113],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00002321222,0.000022079848,0.00027977358,0.00006892821,0.000017137932,0.00015182041,0.000069153255,0.95391387,0.032310944,0.008209538,0.00013395856,0.0047995946],"study_design_scores_gemma":[0.0000025409183,0.00000801047,0.00007897754,0.000002435156,0.0000033190936,0.000016956808,0.0000037353107,0.9969902,0.001520187,0.0011218813,0.0002495447,0.0000020295017],"about_ca_topic_score_codex":0.0019093907,"about_ca_topic_score_gemma":0.0011740677,"teacher_disagreement_score":0.0019093907,"about_ca_system_score_codex":0.00044141655,"about_ca_system_score_gemma":0.0002784963,"threshold_uncertainty_score":0.0037965178},"labels":[],"label_agreement":null},{"id":"W4393135271","doi":"","title":"4H-SiC P +N UV photodiodes: A comparison between beam and plasma doping processes","year":2011,"lang":"en","type":"article","venue":"HAL (Le Centre pour la Communication Scientifique Directe)","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Institut National de la Recherche Scientifique","funders":"","keywords":"Photodiode; Doping; Plasma; Materials science; Optoelectronics; Beam (structure); Optics; Physics; Nuclear physics","score_opus":0.02293524263634775,"score_gpt":0.209147890983538,"score_spread":0.18621264834719026,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4393135271","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.975524,0.0049850903,0.010029699,0.0001160199,0.00010336042,0.00009897235,0.0002261036,0.0002931573,0.008623586],"genre_scores_gemma":[0.9851199,0.001520303,0.007551972,0.000082249324,0.000030039868,0.000040979125,0.000181622,0.000058894067,0.005413954],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9995369,0.0001028476,0.000017214921,0.000081395316,0.00019945648,0.000062276435],"domain_scores_gemma":[0.99914634,0.00042445754,0.00007074933,0.00009264893,0.00023215717,0.00003370207],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0007866323,0.00023826462,0.0003254287,0.00032892215,0.00039212027,0.0007363654,0.0008181448,0.0008784114,0.0024921717],"category_scores_gemma":[0.001018713,0.0002507188,0.00030436364,0.0004494024,0.00030899077,0.0006139199,0.00027133772,0.00027685493,0.00052308716],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.002482096,0.00011163165,0.0030718783,0.00029478106,0.0000665455,0.00011963405,0.0001735861,0.000617877,0.96094406,0.000614431,0.00045114837,0.031052249],"study_design_scores_gemma":[0.000066955916,0.0017921897,0.019861314,0.000029027062,0.000120557095,0.00037589742,0.00014544584,0.0040213745,0.9688053,0.00018988374,0.0045725093,0.000019478372],"about_ca_topic_score_codex":0.0013285107,"about_ca_topic_score_gemma":0.002720439,"teacher_disagreement_score":0.0024921717,"about_ca_system_score_codex":0.0005706743,"about_ca_system_score_gemma":0.0003585069,"threshold_uncertainty_score":0.0083370805},"labels":[],"label_agreement":null},{"id":"W4396612421","doi":"10.1016/j.energy.2024.131480","title":"An I–V characteristic reconstruction-based partial shading diagnosis and quantitative evaluation for photovoltaic strings","year":2024,"lang":"en","type":"article","venue":"Energy","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":5,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Concordia University","funders":"National University's Basic Research Foundation of China; National Natural Science Foundation of China","keywords":"Photovoltaic system; Shading; Computer science; Artificial intelligence; Engineering; Electrical engineering; Computer graphics (images)","score_opus":0.028243780272828384,"score_gpt":0.27346667559046034,"score_spread":0.24522289531763194,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4396612421","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.12516616,0.00039522332,0.87045646,0.00010914906,0.000043028744,0.000071140705,0.00010583713,0.001871262,0.0017816611],"genre_scores_gemma":[0.852253,0.00024490437,0.14637013,0.00005097982,0.000021420637,0.000049502738,0.00011386342,0.000048469865,0.00084757],"study_design_codex":"design_other","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.999506,0.000083384344,0.00002999504,0.000094797506,0.00026265875,0.000023160408],"domain_scores_gemma":[0.999348,0.00013615246,0.00012601426,0.00009978964,0.00026412072,0.00002594637],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00041772114,0.0005845688,0.00035485186,0.0012561968,0.00025061576,0.0006071355,0.00043769914,0.0005773143,0.00081041275],"category_scores_gemma":[0.0014707028,0.00024164692,0.00035506932,0.0006940829,0.00031694505,0.0010640955,0.0003995213,0.00036181073,0.00028441896],"study_design_candidate":"simulation_or_modeling","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00040213528,0.00013820462,0.0144795915,0.00036211527,0.00009605913,0.0003421778,0.00025669322,0.063306265,0.4341389,0.002101751,0.001292273,0.4830839],"study_design_scores_gemma":[0.000029467523,0.00041370126,0.012405677,0.00003150352,0.00006543245,0.00075147557,0.00011665484,0.8289617,0.15421504,0.0011073975,0.0018127478,0.00008920505],"about_ca_topic_score_codex":0.0007385468,"about_ca_topic_score_gemma":0.00091879006,"teacher_disagreement_score":0.0012561968,"about_ca_system_score_codex":0.00034610907,"about_ca_system_score_gemma":0.0002582875,"threshold_uncertainty_score":0.0027111173},"labels":[],"label_agreement":null},{"id":"W4396891074","doi":"10.1007/s11664-024-11133-6","title":"Optimizing High-Transmission Conductive Windows with Antireflection Coating for Oblique Angle Light Incidence","year":2024,"lang":"en","type":"article","venue":"Journal of Electronic Materials","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":3,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Mount Royal University","funders":"","keywords":"Oblique case; Materials science; Optics; Coating; Electrical conductor; Transmission (telecommunications); Angle of incidence (optics); Incidence (geometry); Optoelectronics; Composite material; Physics; Telecommunications; Computer science","score_opus":0.007624609832480919,"score_gpt":0.23219824718198762,"score_spread":0.2245736373495067,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4396891074","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9774465,0.0008816855,0.01591877,0.00007594905,0.000087641616,0.000043101318,0.00015195034,0.00027832107,0.005116097],"genre_scores_gemma":[0.98204386,0.0006268304,0.015599561,0.000026604781,0.000016123786,0.000028965274,0.00013002894,0.00012022213,0.0014077144],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9997985,0.000009510759,0.000010193381,0.00004102718,0.00007353064,0.00006719917],"domain_scores_gemma":[0.99970955,0.000066142005,0.00009457172,0.000028751676,0.000064350694,0.000036551235],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00015660128,0.00059470604,0.0003205405,0.00023546224,0.00023160226,0.0010011351,0.0005189939,0.00039704994,0.0010012977],"category_scores_gemma":[0.00044666245,0.00032786018,0.00027250772,0.00029421793,0.00018112478,0.0005729642,0.00036365664,0.00042714417,0.00042520184],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00006834798,0.00004774585,0.00028988125,0.0000789745,0.0000099043045,0.00007714131,0.000027129709,0.00084724044,0.9946243,0.00045078638,0.000224924,0.003253588],"study_design_scores_gemma":[0.000022592787,0.00015669077,0.0010632265,0.000011726955,0.000024294064,0.00010607549,0.000039674844,0.0068001063,0.99006665,0.00008399876,0.0016112681,0.000013695249],"about_ca_topic_score_codex":0.00081705564,"about_ca_topic_score_gemma":0.0022018934,"teacher_disagreement_score":0.0010012977,"about_ca_system_score_codex":0.0003600262,"about_ca_system_score_gemma":0.00043531487,"threshold_uncertainty_score":0.0033496618},"labels":[],"label_agreement":null},{"id":"W4396907104","doi":"10.1016/j.nima.2024.169435","title":"Analysis of the quality assurance results from the initial part of production of the ATLAS18 ITK strip sensors","year":2024,"lang":"en","type":"article","venue":"Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":7,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Simon Fraser University; TRIUMF; University of Toronto","funders":"Agencia Estatal de Investigación; Japan Society for the Promotion of Science; CERN; Forskningsrådet om Hälsa, Arbetsliv och Välfärd; Natural Sciences and Engineering Research Council of Canada; Hunan Provincial Science and Technology Department; U.S. Department of Energy","keywords":"Quality assurance; Production (economics); Quality (philosophy); Computer science; Operations management; Engineering; Philosophy; Economics; Epistemology","score_opus":0.0729352540316849,"score_gpt":0.3773343996776069,"score_spread":0.304399145645922,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4396907104","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9719187,0.00087712496,0.019372303,0.00015892703,0.00008328369,0.00012003412,0.0026651835,0.0010284451,0.0037759717],"genre_scores_gemma":[0.9784154,0.00029907658,0.012038921,0.00012003421,0.000023245713,0.00008689359,0.003460896,0.00025132205,0.0053043063],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99752194,0.0001958839,0.00007949175,0.00037358367,0.0016413284,0.00018777631],"domain_scores_gemma":[0.9951975,0.00080250925,0.00044035615,0.0004739004,0.002968516,0.000117207885],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0018265035,0.0006849666,0.000445436,0.0013766689,0.0006814139,0.0011223722,0.0006174207,0.0007462665,0.0021528895],"category_scores_gemma":[0.002707532,0.00023612501,0.00058944133,0.001118216,0.0005325637,0.00036891745,0.00043127144,0.0005414903,0.0010752195],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0022184784,0.00018956154,0.038170055,0.00027190207,0.00014108367,0.00031214542,0.0006478082,0.002076007,0.91104734,0.0003370764,0.0014616831,0.043126825],"study_design_scores_gemma":[0.00003171469,0.0014056611,0.07537025,0.000019453735,0.00014795127,0.00030388826,0.00019104805,0.002349754,0.91350573,0.000091465095,0.0065497956,0.00003321238],"about_ca_topic_score_codex":0.0029729456,"about_ca_topic_score_gemma":0.002629207,"teacher_disagreement_score":0.0029729456,"about_ca_system_score_codex":0.0010051572,"about_ca_system_score_gemma":0.00062722096,"threshold_uncertainty_score":0.009659648},"labels":[],"label_agreement":null},{"id":"W4400079536","doi":"10.1002/sdtp.17132","title":"62‐2: Optimizing Under Display Infrared Technology: A Comprehensive Analysis of Diffraction Issues","year":2024,"lang":"en","type":"article","venue":"SID Symposium Digest of Technical Papers","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"OTI Lumionics (Canada)","funders":"","keywords":"Infrared; Diffraction; Computer science; Materials science; Optics; Physics","score_opus":0.009095284080861602,"score_gpt":0.24769257427751096,"score_spread":0.23859729019664935,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4400079536","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.8326637,0.0036356817,0.13251792,0.00051086495,0.000048798098,0.000102279,0.00022121338,0.00033296854,0.029966515],"genre_scores_gemma":[0.96018785,0.0017724503,0.034721985,0.00008203323,0.000016023407,0.000031045158,0.00012340004,0.00008503936,0.002980125],"study_design_codex":"bench_or_experimental","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9991248,0.000073536685,0.000027991135,0.000065934146,0.000637577,0.00007016619],"domain_scores_gemma":[0.9992501,0.00032136706,0.00015336428,0.000075762284,0.0001841667,0.000015207715],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0005932681,0.00036120642,0.00057055685,0.00032974506,0.0003175218,0.0012301216,0.00043290583,0.00052046863,0.0013865347],"category_scores_gemma":[0.0018033013,0.00024272641,0.00033131527,0.0005339152,0.00042978616,0.0015017593,0.00031191652,0.00035366323,0.0003657418],"study_design_candidate":"simulation_or_modeling","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00020292048,0.00015999023,0.0077339266,0.0005936407,0.00008297833,0.0005274361,0.0004068142,0.0884879,0.831884,0.015038689,0.0012038606,0.05367777],"study_design_scores_gemma":[0.000023752658,0.00047054875,0.010702212,0.00005529731,0.00010047572,0.001114445,0.00033734314,0.33782047,0.63653266,0.002811709,0.009958354,0.00007280641],"about_ca_topic_score_codex":0.0010980509,"about_ca_topic_score_gemma":0.0014538448,"teacher_disagreement_score":0.0013865347,"about_ca_system_score_codex":0.00082857365,"about_ca_system_score_gemma":0.0005643344,"threshold_uncertainty_score":0.006011784},"labels":[],"label_agreement":null},{"id":"W4400959941","doi":"10.1364/oe.530718","title":"Light-trapping by wave interference in intermediate-thickness silicon solar cells","year":2024,"lang":"en","type":"article","venue":"Optics Express","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":9,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Toronto","funders":"Science and Engineering Research Board; Ontario Research Foundation","keywords":"Optics; Interference (communication); Silicon; Materials science; Trapping; Optoelectronics; Physics; Telecommunications","score_opus":0.010981714813169393,"score_gpt":0.20554898053796966,"score_spread":0.19456726572480026,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4400959941","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9924367,0.00015808098,0.004207562,0.000055301345,0.000011047271,0.000009040543,0.000063318286,0.0000474508,0.0030115293],"genre_scores_gemma":[0.99809307,0.00006886233,0.0015036211,0.000009604109,0.0000014556039,0.000005048457,0.000022862278,0.000003751709,0.0002917151],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99994004,0.000004781623,0.0000018598762,0.000007034539,0.00003067817,0.0000155419],"domain_scores_gemma":[0.999926,0.000027101738,0.000018457718,0.000004445341,0.000014109681,0.000009949655],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000075048694,0.0001563779,0.0001858903,0.00009674448,0.00016698251,0.00037957865,0.0003519692,0.00023312273,0.00069977384],"category_scores_gemma":[0.00016892845,0.00011387237,0.00017779955,0.00014700096,0.00030807126,0.00017581799,0.00015373601,0.00022669294,0.000095569805],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00016286183,0.00013653489,0.0035389408,0.00015310165,0.00003892465,0.00045049036,0.00012762012,0.2848623,0.69955623,0.005035822,0.00047725218,0.0054598777],"study_design_scores_gemma":[0.000043768527,0.00024290597,0.0025358677,0.000010694366,0.00001618341,0.00008787643,0.00006991576,0.8079061,0.18753411,0.0008632506,0.0006676832,0.000021565855],"about_ca_topic_score_codex":0.0038028753,"about_ca_topic_score_gemma":0.0035137385,"teacher_disagreement_score":0.0038028753,"about_ca_system_score_codex":0.00063315075,"about_ca_system_score_gemma":0.00032995228,"threshold_uncertainty_score":0.0075614452},"labels":[],"label_agreement":null},{"id":"W4401808047","doi":"10.1038/s41598-024-69552-8","title":"Fabrication of nitrogen-hyperdoped silicon by high-pressure gas immersion excimer laser doping","year":2024,"lang":"en","type":"article","venue":"Scientific Reports","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":5,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"","funders":"King Abdullah University of Science and Technology; Trent University; Nottingham Trent University","keywords":"Silicon; Dopant; Materials science; Excimer laser; Doping; Crystallinity; Semiconductor; Optoelectronics; Laser; Optics; Composite material","score_opus":0.007208933910264201,"score_gpt":0.20594062900649981,"score_spread":0.19873169509623562,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4401808047","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9750474,0.00042872547,0.020612475,0.000050285995,0.00004227815,0.000059740014,0.00023355996,0.00019636608,0.0033291928],"genre_scores_gemma":[0.95273805,0.00040159683,0.043997873,0.000032176205,0.000009764551,0.000061487925,0.00022093272,0.00006290322,0.0024752154],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998772,0.000007799919,0.000008844554,0.000032080927,0.00005674397,0.000017374412],"domain_scores_gemma":[0.99987364,0.000020982085,0.00004736401,0.000022580756,0.000024250694,0.000011296641],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0001407095,0.00026322,0.00017803993,0.00021213198,0.00016412801,0.00022339827,0.00032938406,0.0003585971,0.0005884001],"category_scores_gemma":[0.00015139708,0.00017825057,0.00019946687,0.00019507727,0.00022485288,0.00019871534,0.0003023072,0.00031412576,0.0003311978],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000005804489,0.000003887803,0.00007036355,0.000016774477,0.0000020034809,0.000038201164,0.000012495405,0.00013347434,0.9985783,0.00010713077,0.000019323752,0.0010121838],"study_design_scores_gemma":[0.000004641989,0.000060446233,0.0007747861,0.0000043371297,0.0000037913087,0.00008282824,0.000008552994,0.0020202957,0.99587375,0.000029112209,0.001131627,0.0000058790647],"about_ca_topic_score_codex":0.00048941793,"about_ca_topic_score_gemma":0.0014492983,"teacher_disagreement_score":0.0005884001,"about_ca_system_score_codex":0.00034848164,"about_ca_system_score_gemma":0.00030388666,"threshold_uncertainty_score":0.002528429},"labels":[],"label_agreement":null},{"id":"W4402244960","doi":"10.1002/agt2.661","title":"Spin‐coating fabrication of high‐yield and uniform organic thin‐film transistors via a primer template growth","year":2024,"lang":"en","type":"article","venue":"Aggregate","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":6,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Toronto","funders":"Applied Basic Research Foundation of Yunnan Province; National Natural Science Foundation of China","keywords":"Fabrication; Thin-film transistor; Materials science; Spin coating; Yield (engineering); Primer (cosmetics); Spin (aerodynamics); Coating; Nanotechnology; Thin film; Optoelectronics; Layer (electronics); Composite material; Chemistry; Engineering; Mechanical engineering; Organic chemistry","score_opus":0.008886245701972452,"score_gpt":0.19902517441419576,"score_spread":0.19013892871222332,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4402244960","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.91804785,0.0019048223,0.072831616,0.00013989107,0.00019571274,0.0001349534,0.000637867,0.00090821175,0.0051991083],"genre_scores_gemma":[0.9502135,0.0010355129,0.045795526,0.000043184737,0.000022377148,0.00008622779,0.00022534929,0.00008531738,0.0024931063],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998908,0.000006502079,0.000010024901,0.00003190297,0.000044873632,0.000016004415],"domain_scores_gemma":[0.9998721,0.000038913353,0.000037680522,0.000020778742,0.00001777578,0.000012800092],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000113623326,0.00034940994,0.00020969867,0.0002050636,0.00010083056,0.00032843955,0.00036368714,0.0003092557,0.00073104026],"category_scores_gemma":[0.00023356258,0.00024618872,0.00023431671,0.00017896447,0.00018878917,0.00023516743,0.00020787041,0.00041730521,0.00042576605],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0000047696535,0.0000046746172,0.000038827206,0.000029652376,0.000003776087,0.000033296263,0.0000071914264,0.00009831526,0.9984238,0.00013437743,0.000038729762,0.0011825818],"study_design_scores_gemma":[0.000002758668,0.000027042284,0.0001955174,0.0000018423614,0.0000041660724,0.000032408498,0.0000028815957,0.0012734378,0.99776673,0.000018343993,0.00067324424,0.0000017282412],"about_ca_topic_score_codex":0.00032740697,"about_ca_topic_score_gemma":0.0010689272,"teacher_disagreement_score":0.00073104026,"about_ca_system_score_codex":0.0002562841,"about_ca_system_score_gemma":0.00017962523,"threshold_uncertainty_score":0.0024456382},"labels":[],"label_agreement":null},{"id":"W4403139407","doi":"10.3390/jlpea14040048","title":"Energy Restoration in Data Drivers for Low-Power Digitally Driven OLEDoS Microdisplays","year":2024,"lang":"en","type":"article","venue":"Journal of Low Power Electronics and Applications","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Power (physics); Computer science; Energy (signal processing); Computer graphics (images); Physics; Electrical engineering; Engineering","score_opus":0.0063699796076388746,"score_gpt":0.22449523966723464,"score_spread":0.21812526005959576,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4403139407","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.84961224,0.0011157512,0.14044416,0.00041183,0.00024265896,0.00018355699,0.00032349624,0.0030143592,0.0046519334],"genre_scores_gemma":[0.9755398,0.00016909202,0.019055909,0.00013770544,0.000020826927,0.000053278047,0.00010549748,0.00015899366,0.004758928],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99978536,0.000018160168,0.000014095674,0.000053726042,0.00009301007,0.000035691268],"domain_scores_gemma":[0.999678,0.00007685869,0.000070149086,0.00004476365,0.00010978999,0.000020437807],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0001820834,0.00032917183,0.00021991982,0.00034723588,0.00020605593,0.00049009745,0.0012715451,0.0003304358,0.0017984847],"category_scores_gemma":[0.0005421816,0.00020526725,0.0001850958,0.00021039722,0.00022461351,0.0008307976,0.00028436445,0.00030244642,0.00052524754],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00027528082,0.00009456229,0.0012876001,0.00019202584,0.000022415768,0.00033080133,0.00022043056,0.0011524155,0.9588058,0.001657898,0.001143299,0.03481756],"study_design_scores_gemma":[0.000017565199,0.00027791839,0.001407657,0.000018073692,0.000019122876,0.00032287987,0.00006289824,0.012429267,0.9775618,0.00029934873,0.0075672492,0.000016180154],"about_ca_topic_score_codex":0.00038359538,"about_ca_topic_score_gemma":0.0007382354,"teacher_disagreement_score":0.0017984847,"about_ca_system_score_codex":0.00049699337,"about_ca_system_score_gemma":0.00029727776,"threshold_uncertainty_score":0.006016493},"labels":[],"label_agreement":null},{"id":"W4405077030","doi":"10.1116/6.0003977","title":"Design method for generating multiple colors with thickness-modulated thin-film optical filters for silicon solar cells","year":2024,"lang":"en","type":"article","venue":"Journal of Vacuum Science & Technology A Vacuum Surfaces and Films","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Iridian Spectral Technologies (Canada); Institut National de la Recherche Scientifique; McMaster University","funders":"Natural Sciences and Engineering Research Council of Canada; Ontario Research Foundation","keywords":"Materials science; Silicon; Optoelectronics; Optics; Thin film solar cell; Optical filter; Solar cell; Thin film; Nanotechnology; Physics","score_opus":0.015351672594331048,"score_gpt":0.2519309481364983,"score_spread":0.23657927554216726,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4405077030","genre_codex":"methods","genre_gemma":"methods","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"methods","genre_consensus":"methods","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.25653666,0.0009494022,0.73150593,0.00017101393,0.00020779797,0.0002525615,0.00022615514,0.0013574538,0.008793084],"genre_scores_gemma":[0.52483135,0.0005361515,0.47031367,0.00007674607,0.000023526496,0.0002518414,0.00011942842,0.00018346148,0.0036639161],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998758,0.000008636296,0.00000766761,0.00002761818,0.000065010674,0.000015361427],"domain_scores_gemma":[0.999861,0.000022662449,0.000041201958,0.00001687056,0.000049183604,0.000008979578],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0002117125,0.0004896132,0.00020125501,0.0003656852,0.00020881857,0.00043480226,0.00053579913,0.00036995343,0.00092343526],"category_scores_gemma":[0.00029205703,0.00029284833,0.0003519786,0.0002260435,0.00017611934,0.00031811054,0.0001903801,0.00036489154,0.00047117932],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000021172511,0.000029279123,0.00026524297,0.000111364265,0.000017717713,0.000058394482,0.00005176406,0.0069263545,0.9740434,0.0011846946,0.0002600976,0.017030554],"study_design_scores_gemma":[0.000022480317,0.00015819752,0.0004745799,0.00001284251,0.000028950762,0.00013059146,0.00002347453,0.062338907,0.92790824,0.00029086796,0.008586483,0.000024421126],"about_ca_topic_score_codex":0.00080779026,"about_ca_topic_score_gemma":0.0018292668,"teacher_disagreement_score":0.00092343526,"about_ca_system_score_codex":0.00052792404,"about_ca_system_score_gemma":0.00037109398,"threshold_uncertainty_score":0.0038303137},"labels":[],"label_agreement":null},{"id":"W4406011975","doi":"10.1109/jflex.2025.3525598","title":"Flexible Low-Power Digital Circuits With Unipolar Amorphous Silicon Thin-Film Transistors","year":2024,"lang":"en","type":"article","venue":"IEEE Journal on Flexible Electronics","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":4,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Thin-film transistor; Amorphous silicon; Materials science; Optoelectronics; Transistor; Silicon; Electronic circuit; Digital electronics; Electrical engineering; Power (physics); Oxide thin-film transistor; Amorphous solid; Engineering physics; Engineering; Nanotechnology; Crystalline silicon; Physics; Voltage; Chemistry","score_opus":0.006980480342581881,"score_gpt":0.20078914333427395,"score_spread":0.19380866299169205,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4406011975","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9337104,0.0010708874,0.05971805,0.00010675943,0.00004533867,0.000040542414,0.00019891757,0.0007190627,0.0043900395],"genre_scores_gemma":[0.98052764,0.0004001397,0.017344607,0.00004580579,0.000013113682,0.000016542597,0.000085276995,0.00003000787,0.0015369974],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99993086,0.0000050689073,0.0000052034247,0.000013684589,0.000033037795,0.000012132502],"domain_scores_gemma":[0.9998573,0.000033361754,0.000047970374,0.000025468518,0.00002609597,0.000009785242],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000052863885,0.00022740084,0.00015197143,0.00019276254,0.00013557261,0.00028991888,0.00047182967,0.00021296673,0.00092982687],"category_scores_gemma":[0.0001953928,0.00012169229,0.00015338795,0.00026795093,0.00015832945,0.00039325305,0.0001548252,0.00017878863,0.00027566784],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0000707537,0.000029625477,0.00088918017,0.00008988202,0.00002668314,0.00028942336,0.000036013254,0.0028934567,0.97598416,0.0006820143,0.00027101696,0.018737972],"study_design_scores_gemma":[0.000025300504,0.0006660139,0.004702885,0.000020354084,0.00005465659,0.00069802353,0.00004141251,0.035938036,0.9528572,0.00048486152,0.004493303,0.000017947981],"about_ca_topic_score_codex":0.00064469496,"about_ca_topic_score_gemma":0.001899408,"teacher_disagreement_score":0.00092982687,"about_ca_system_score_codex":0.00022008763,"about_ca_system_score_gemma":0.0001849328,"threshold_uncertainty_score":0.0031105876},"labels":[],"label_agreement":null},{"id":"W4409162740","doi":"10.1063/5.0249503","title":"An x-ray diffraction and Raman spectroscopic analysis of thin-films of silicon grown by ultrahigh-vacuum evaporation and the thin-film silicon continuum","year":2025,"lang":"en","type":"article","venue":"Journal of Applied Physics","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"National Research Council Canada; University of British Columbia, Okanagan Campus; University of British Columbia","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Silicon; Thin film; Raman spectroscopy; Vacuum evaporation; Materials science; Diffraction; Vacuum deposition; Evaporation; X-ray crystallography; Analytical Chemistry (journal); Optoelectronics; Nanotechnology; Optics; Chemistry; Physics","score_opus":0.00423171233199659,"score_gpt":0.21276947913353564,"score_spread":0.20853776680153904,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4409162740","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9613901,0.0017806233,0.027669303,0.0000882152,0.000057813115,0.00019950385,0.0018878805,0.00019166403,0.0067349253],"genre_scores_gemma":[0.88109463,0.0032699392,0.10713406,0.00007071594,0.000031866086,0.00026708108,0.0022751817,0.000083592204,0.0057729585],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99957234,0.000034394096,0.000023692655,0.000058439575,0.00027313715,0.000037953265],"domain_scores_gemma":[0.9997036,0.00007532223,0.000043453863,0.000058700072,0.000102834834,0.000016069867],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0003696284,0.00033068637,0.00036437952,0.0011086203,0.0006618643,0.0004150995,0.0005219372,0.00033881064,0.0011721959],"category_scores_gemma":[0.0004157279,0.00028858666,0.0003573486,0.0012789037,0.00036565604,0.00033523858,0.00034501747,0.0006887042,0.00025574563],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000039550792,0.000037016882,0.00085261115,0.000082567356,0.00001442607,0.000086802596,0.00007611244,0.00019735325,0.9947187,0.00040198865,0.00009137848,0.0034013223],"study_design_scores_gemma":[0.000005761899,0.00026051138,0.018503007,0.000019170391,0.000022617513,0.00054923986,0.00026103586,0.00237999,0.97339237,0.00018278696,0.004403229,0.000020315607],"about_ca_topic_score_codex":0.0010364945,"about_ca_topic_score_gemma":0.0023873944,"teacher_disagreement_score":0.0011721959,"about_ca_system_score_codex":0.0002612202,"about_ca_system_score_gemma":0.00039036173,"threshold_uncertainty_score":0.00392133},"labels":[],"label_agreement":null},{"id":"W4409274047","doi":"10.1039/d4tc05338a","title":"Flexible transparent layered metal oxides for organic devices","year":2025,"lang":"en","type":"article","venue":"Journal of Materials Chemistry C","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":3,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Toronto","funders":"National Natural Science Foundation of China","keywords":"Materials science; Metal; Nanotechnology; Metal-organic framework; Chemical engineering; Metallurgy; Organic chemistry; Adsorption","score_opus":0.01592621380600061,"score_gpt":0.23965178777367915,"score_spread":0.22372557396767853,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4409274047","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.72354895,0.043939568,0.12283248,0.003105636,0.0016302058,0.000279953,0.0027547032,0.0038839113,0.09802467],"genre_scores_gemma":[0.9393105,0.008140166,0.03963969,0.0002007389,0.00012646215,0.00014366124,0.00062269357,0.00013215988,0.011683999],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99994755,0.0000048153174,0.0000033452077,0.000009633035,0.000020511257,0.00001416825],"domain_scores_gemma":[0.99995923,0.000008590342,0.000007737522,0.0000069707366,0.000007001143,0.000010465952],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00012676265,0.00028137336,0.00015185091,0.0002701614,0.0002485389,0.00052108394,0.00037555347,0.0003039539,0.0033119975],"category_scores_gemma":[0.0001589789,0.00014575578,0.00015759727,0.00021176782,0.00015771152,0.00044611373,0.0004985264,0.00052505406,0.001026169],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00006114809,0.000047065925,0.00024549582,0.0003051075,0.000011300325,0.00024473396,0.000078319616,0.00093312335,0.9349259,0.018521238,0.0032695772,0.041356936],"study_design_scores_gemma":[0.000060680723,0.00031420955,0.0016375681,0.000107411484,0.00003150228,0.00040871187,0.00008816591,0.01211142,0.8291163,0.0069270884,0.14912735,0.000069603906],"about_ca_topic_score_codex":0.00024134805,"about_ca_topic_score_gemma":0.0007722044,"teacher_disagreement_score":0.0033119975,"about_ca_system_score_codex":0.00030302684,"about_ca_system_score_gemma":0.0001624482,"threshold_uncertainty_score":0.011079729},"labels":[],"label_agreement":null},{"id":"W4409762260","doi":"10.1109/jflex.2025.3564228","title":"Realization of Low-Power Digital Circuits With Unipolar TFTs on Flexible Substrate","year":2025,"lang":"en","type":"article","venue":"IEEE Journal on Flexible Electronics","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":2,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Realization (probability); Substrate (aquarium); Electronic circuit; Power (physics); Computer science; Materials science; Electronic engineering; Digital electronics; Optoelectronics; Electrical engineering; Engineering; Physics; Mathematics","score_opus":0.0060021096832668375,"score_gpt":0.2087628069319283,"score_spread":0.20276069724866147,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4409762260","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.93519056,0.0010909055,0.056006867,0.00023362496,0.00011494353,0.000068674744,0.00042109826,0.0005663549,0.0063069933],"genre_scores_gemma":[0.97641295,0.00036839486,0.021897165,0.000053975473,0.00001623374,0.000023411656,0.00013695893,0.000020783238,0.0010701034],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999349,0.0000038659214,0.0000058478977,0.000017076254,0.000026243977,0.000012031971],"domain_scores_gemma":[0.9999008,0.000016464448,0.000027832355,0.000017187327,0.000026976637,0.000010758436],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00007479136,0.00019562973,0.00014175143,0.00014152344,0.000103001,0.0002490026,0.00044333297,0.00029831377,0.0009523215],"category_scores_gemma":[0.00021726107,0.00008817872,0.00014046792,0.00014806927,0.00012879792,0.00038337382,0.00013884356,0.00018910824,0.0003261785],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000033246586,0.000013061496,0.00037036528,0.00008429563,0.000012098633,0.00021675671,0.000026846317,0.0006373672,0.986254,0.0006977455,0.0002705694,0.0113836285],"study_design_scores_gemma":[0.00001655773,0.00030256127,0.0014504871,0.00000985498,0.00002022996,0.0003357529,0.000031915828,0.009309928,0.9842815,0.00022073183,0.0040116357,0.000008885674],"about_ca_topic_score_codex":0.00041621012,"about_ca_topic_score_gemma":0.0008205081,"teacher_disagreement_score":0.0009523215,"about_ca_system_score_codex":0.00020484472,"about_ca_system_score_gemma":0.00013577417,"threshold_uncertainty_score":0.0031858683},"labels":[],"label_agreement":null},{"id":"W4411060642","doi":"10.1039/d5tc00580a","title":"Detection of traps in thin-film transistors using evolutionary algorithms","year":2025,"lang":"en","type":"article","venue":"Journal of Materials Chemistry C","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":2,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McMaster University","funders":"Spanish National Plan for Scientific and Technical Research and Innovation; NextGenerationEU; Agencia Estatal de Investigación; European Commission","keywords":"Materials science; Transistor; Thin-film transistor; Optoelectronics; Algorithm; Nanotechnology; Computer science; Electrical engineering; Engineering","score_opus":0.008418248641054173,"score_gpt":0.21324915255023308,"score_spread":0.2048309039091789,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4411060642","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.45115545,0.0007268955,0.54530096,0.00020338324,0.000042592106,0.0000904266,0.00008933536,0.00048104668,0.0019099583],"genre_scores_gemma":[0.76228374,0.00028405612,0.23620325,0.00008871744,0.000011534737,0.00006847378,0.00007383629,0.00003761354,0.000948732],"study_design_codex":"bench_or_experimental","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99986553,0.000029301244,0.000007964155,0.000028455805,0.000054825414,0.000013880835],"domain_scores_gemma":[0.99935156,0.0003858128,0.000117620155,0.000036079622,0.000087717766,0.000021237236],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00030338153,0.0004901932,0.00038368223,0.0006945477,0.00024997312,0.00051708583,0.0005016802,0.0008475314,0.0005780287],"category_scores_gemma":[0.0013987569,0.00021102183,0.00036652212,0.00037565877,0.00030055045,0.00055122445,0.00020839332,0.00047336836,0.00008788926],"study_design_candidate":"simulation_or_modeling","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00023264719,0.0002935303,0.011922864,0.0003479977,0.00027768765,0.0004441723,0.00015258635,0.31185287,0.5033137,0.0068773497,0.0005095108,0.16377509],"study_design_scores_gemma":[0.00001540929,0.00011327396,0.0013345542,0.000013422762,0.000030597843,0.00011066728,0.000021039035,0.95530915,0.040672228,0.0020158864,0.00035007956,0.0000136727995],"about_ca_topic_score_codex":0.0006648042,"about_ca_topic_score_gemma":0.0008476307,"teacher_disagreement_score":0.0008475314,"about_ca_system_score_codex":0.00021783874,"about_ca_system_score_gemma":0.00020990951,"threshold_uncertainty_score":0.0019336343},"labels":[],"label_agreement":null},{"id":"W4411636977","doi":"10.2139/ssrn.5320699","title":"Tuning Interfacial Properties of Amorphous/Crystalline Silicon Heterojunction Via Control of Impinging Species in Rf Triode Pecvd","year":2025,"lang":"en","type":"preprint","venue":"SSRN Electronic Journal","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Toronto","funders":"","keywords":"Triode; Plasma-enhanced chemical vapor deposition; Materials science; Amorphous silicon; Optoelectronics; Amorphous solid; Silicon; Heterojunction; Nanotechnology; Crystalline silicon; Electrical engineering; Chemistry; Capacitor; Voltage; Engineering; Crystallography","score_opus":0.010149405400863527,"score_gpt":0.19708857121481446,"score_spread":0.18693916581395092,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4411636977","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9971125,0.00035847997,0.0012486855,0.000028145021,0.00001762998,0.000005742709,0.00006710415,0.000030099862,0.0011316312],"genre_scores_gemma":[0.99876523,0.000176222,0.0005141609,0.000013287701,0.000004262159,0.0000041852218,0.00004121297,0.000013603096,0.00046775184],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99989974,0.000006483314,0.000005358662,0.0000331792,0.000031993135,0.000023263741],"domain_scores_gemma":[0.9999113,0.000031781394,0.00001897935,0.00000990968,0.000017908093,0.000010113915],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0001390134,0.00021614223,0.00018640465,0.00016240096,0.00015632303,0.0005983929,0.00027497954,0.00027168822,0.0012222101],"category_scores_gemma":[0.0002023182,0.0001296814,0.00009124629,0.00024800465,0.00019574858,0.00028310897,0.00018497654,0.00026685593,0.00017048609],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000047178168,0.000008603221,0.00016259984,0.000020663007,0.0000038131589,0.000032902175,0.000022979935,0.00012597028,0.9985459,0.000087748165,0.000031039468,0.0009107179],"study_design_scores_gemma":[0.000005681502,0.00005849647,0.0014187348,0.000002782138,0.0000065087697,0.00002299225,0.000029052235,0.0021452634,0.99595875,0.00002921697,0.00031998646,0.0000024970977],"about_ca_topic_score_codex":0.00030560084,"about_ca_topic_score_gemma":0.00060993567,"teacher_disagreement_score":0.0012222101,"about_ca_system_score_codex":0.00017734613,"about_ca_system_score_gemma":0.000099603996,"threshold_uncertainty_score":0.0040887594},"labels":[],"label_agreement":null},{"id":"W4412511541","doi":"10.1149/ma2025-01351683mtgabs","title":"Monolithic Integration of a-Indium Gallium Zinc Oxide TFT with Inorganic GaN Based Nano-LEDs Array","year":2025,"lang":"en","type":"article","venue":"ECS Meeting Abstracts","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":true,"ca_institutions":"","funders":"","keywords":"Light-emitting diode; Zinc; Optoelectronics; Materials science; Indium; Gallium; Nano-; Gallium nitride; Thin-film transistor; Wide-bandgap semiconductor; Nanotechnology; Metallurgy; Layer (electronics); Composite material","score_opus":0.007509167090560627,"score_gpt":0.20271969585363525,"score_spread":0.19521052876307463,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4412511541","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9710514,0.0012353009,0.019281484,0.00018584597,0.00027906263,0.000047533686,0.0004982103,0.0013154513,0.0061056325],"genre_scores_gemma":[0.9802679,0.0004078898,0.014786801,0.000052967433,0.000030973184,0.000029791623,0.00014956066,0.000040019946,0.004234205],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999069,0.0000038466233,0.0000035532184,0.000041620428,0.000026399048,0.000017765246],"domain_scores_gemma":[0.9999633,0.000004262924,0.000009480231,0.0000051060138,0.000009581567,0.000008267132],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00007409807,0.00019319032,0.00020147656,0.00017086366,0.0001083652,0.00033234435,0.000642192,0.00026352686,0.0007660427],"category_scores_gemma":[0.0000950445,0.00018321523,0.0002590036,0.00015944101,0.000107537475,0.00032089217,0.0001477549,0.00016605415,0.00034843566],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000030606087,0.000021077547,0.00022393483,0.00003263253,0.00000811068,0.00010521119,0.00001660516,0.00030621223,0.99653023,0.0001078428,0.00014591728,0.0024716274],"study_design_scores_gemma":[0.000015217975,0.00012107738,0.0014526031,0.000003954158,0.000017636954,0.00016313267,0.000014841695,0.0075330953,0.9881589,0.000034258243,0.002474698,0.000010709296],"about_ca_topic_score_codex":0.0010567855,"about_ca_topic_score_gemma":0.0019127267,"teacher_disagreement_score":0.0010567855,"about_ca_system_score_codex":0.00037391944,"about_ca_system_score_gemma":0.000121120174,"threshold_uncertainty_score":0.002712965},"labels":[],"label_agreement":null},{"id":"W4412803580","doi":"10.1109/pn66844.2025.11097162","title":"A Comparative Study of the Physical Properties of SiN Thin Films Deposited by LPCVD, PECVD, and Reactive Sputtering for Photonic Device Integration","year":2025,"lang":"en","type":"article","venue":"","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Institut National de la Recherche Scientifique","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Plasma-enhanced chemical vapor deposition; Sputtering; Materials science; Chemical vapor deposition; Photonics; Optoelectronics; Physical vapor deposition; Thin film; Deposition (geology); Nanotechnology","score_opus":0.019556328699699827,"score_gpt":0.24426487838468672,"score_spread":0.22470854968498688,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4412803580","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.98950714,0.0045662965,0.0027015586,0.00005222671,0.000036424706,0.00003106142,0.00017855616,0.000047553323,0.0028792643],"genre_scores_gemma":[0.9819742,0.005143277,0.010298918,0.000038900747,0.000026328842,0.000053298445,0.00037990644,0.000049817245,0.0020352737],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99973184,0.00001961598,0.000020079284,0.000037381335,0.00015982828,0.000031255146],"domain_scores_gemma":[0.999629,0.00014058441,0.00006259306,0.00003661171,0.00011516404,0.000016085272],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00033798988,0.00026874893,0.0003204449,0.00043116376,0.00025854964,0.0004335023,0.00027025645,0.00035984194,0.00070358947],"category_scores_gemma":[0.0005990746,0.0003332133,0.0002727492,0.00044917734,0.00021050677,0.00031783013,0.00015172268,0.00033770438,0.0001753569],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000033260316,0.000009191787,0.00025366092,0.00009478868,0.000012112534,0.000046426023,0.00003324728,0.00015026332,0.99712247,0.00003275991,0.000025055808,0.002186718],"study_design_scores_gemma":[0.000007271413,0.00025698994,0.006220981,0.000009138076,0.000026937309,0.00015946553,0.00005024807,0.001176987,0.99099827,0.000014482075,0.0010713389,0.000007888875],"about_ca_topic_score_codex":0.00051405275,"about_ca_topic_score_gemma":0.0012457364,"teacher_disagreement_score":0.00070358947,"about_ca_system_score_codex":0.00024069312,"about_ca_system_score_gemma":0.00016354983,"threshold_uncertainty_score":0.0023537874},"labels":[],"label_agreement":null},{"id":"W4412803581","doi":"10.1109/pn66844.2025.11097083","title":"UV-Induced Persistent Photoconductivity in a-IGZO TFTs for Optoelectronic Synapses","year":2025,"lang":"en","type":"article","venue":"","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Institut National de la Recherche Scientifique","funders":"","keywords":"Photoconductivity; Optoelectronics; Materials science","score_opus":0.01474544261405515,"score_gpt":0.24212321661166172,"score_spread":0.22737777399760659,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4412803581","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9960432,0.0005952672,0.0018832051,0.00007674483,0.00004303431,0.0000065524837,0.00010427914,0.000070119684,0.0011778168],"genre_scores_gemma":[0.9985045,0.00021215869,0.000643205,0.000018420618,0.0000049150067,0.0000043312325,0.000030715924,0.0000072248063,0.0005745557],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999641,0.0000018951293,0.0000017900542,0.000009051595,0.000011777977,0.000011365508],"domain_scores_gemma":[0.9999484,0.000011751582,0.000016054208,0.0000046011655,0.000009092132,0.000010165028],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00004981961,0.00012812567,0.000108535314,0.00010439485,0.00014403705,0.00024091972,0.00026412754,0.00024036586,0.0006745289],"category_scores_gemma":[0.00012554672,0.00008851697,0.00011632704,0.00014884955,0.00021015984,0.00017919447,0.000101250065,0.00021875018,0.00012532652],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000024406461,0.0000042622632,0.00013971153,0.000023031736,0.0000022312215,0.000070470596,0.000020123383,0.00005145703,0.99876595,0.000107717075,0.00004102923,0.00074965967],"study_design_scores_gemma":[0.000007912504,0.00007485948,0.0024378737,0.0000059481717,0.000009884925,0.0001450897,0.00002709362,0.0014138897,0.99522614,0.00008037134,0.00056744704,0.000003424283],"about_ca_topic_score_codex":0.0007320257,"about_ca_topic_score_gemma":0.0012343016,"teacher_disagreement_score":0.0007320257,"about_ca_system_score_codex":0.00027688977,"about_ca_system_score_gemma":0.00011104426,"threshold_uncertainty_score":0.002256453},"labels":[],"label_agreement":null},{"id":"W4414352383","doi":"10.1063/5.0289622","title":"Inseparability between charge-injection barrier and out-of-plane mobility in staggered thin-film transistors","year":2025,"lang":"en","type":"article","venue":"Applied Physics Letters","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":2,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Ottawa","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Transistor; Contact resistance; Spectroscopy; Wide-bandgap semiconductor; Photoemission spectroscopy","score_opus":0.010170604418874669,"score_gpt":0.21322716678787745,"score_spread":0.2030565623690028,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4414352383","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.96113074,0.00081046415,0.036813345,0.000112622554,0.00002583756,0.000013419468,0.000050746847,0.00016127144,0.0008815499],"genre_scores_gemma":[0.99509287,0.00031488645,0.0044019124,0.000013963976,0.000004494798,0.0000068732015,0.000015437767,0.000010126962,0.00013941748],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9997882,0.000031349482,0.000012735036,0.000056543053,0.00008801131,0.000023192433],"domain_scores_gemma":[0.9996012,0.00023300518,0.00006492183,0.000043414206,0.000036915433,0.000020564488],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00034435926,0.00025865075,0.00034036167,0.0002463733,0.00025334398,0.00060719386,0.00053656095,0.0005092264,0.00030016043],"category_scores_gemma":[0.00090164825,0.00022503432,0.00014619091,0.0001998459,0.0007706823,0.0006659609,0.00023424457,0.0005034872,0.00008371304],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00007859834,0.00002234147,0.001182366,0.000072603594,0.000016627664,0.00035196048,0.00012209464,0.0032038898,0.98836434,0.003350566,0.000060264585,0.0031743066],"study_design_scores_gemma":[0.000015295309,0.00017505973,0.0023338194,0.000019584988,0.00003092228,0.00042028984,0.00009075442,0.0955547,0.89666504,0.0038916285,0.0007624581,0.000040504405],"about_ca_topic_score_codex":0.00046446003,"about_ca_topic_score_gemma":0.0006558838,"teacher_disagreement_score":0.00060719386,"about_ca_system_score_codex":0.000358147,"about_ca_system_score_gemma":0.00021886763,"threshold_uncertainty_score":0.0025985837},"labels":[],"label_agreement":null},{"id":"W4415372043","doi":"10.1088/1361-6382/ae153f","title":"Urbach tails and optical absorption of amorphous silicon coatings","year":2025,"lang":"en","type":"article","venue":"Classical and Quantum Gravity","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Université de Montréal; Université du Québec à Montréal","funders":"Provincie Limburg; Fonds de recherche du Québec – Nature et technologies; Science and Technology Facilities Council; Natural Sciences and Engineering Research Council of Canada; Nederlandse Organisatie voor Wetenschappelijk Onderzoek","keywords":"Amorphous solid; Amorphous silicon; Absorption (acoustics); Silicon; Deposition (geology); Optical coating","score_opus":0.008211271329590045,"score_gpt":0.21411599921241856,"score_spread":0.20590472788282851,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4415372043","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9948009,0.0007915507,0.0017706618,0.000020101841,0.000007758721,0.000004626961,0.00005510445,0.000028769196,0.0025204464],"genre_scores_gemma":[0.9992236,0.00015148825,0.00033627026,0.000005697142,0.000002149051,0.0000021412077,0.00002009543,0.000005044511,0.0002535183],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998946,0.000011844515,0.0000042304514,0.000021365415,0.00004914582,0.000018826882],"domain_scores_gemma":[0.99974245,0.00012248935,0.000053505915,0.000022246291,0.000049266393,0.000010057337],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00014470969,0.0001767207,0.00015138712,0.00048278875,0.0001717146,0.00036741895,0.0001924261,0.00017104852,0.0007655384],"category_scores_gemma":[0.0003968522,0.00014045546,0.00008892815,0.00022552103,0.00028276426,0.00021121287,0.00013268758,0.00020629144,0.00012280158],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00007247436,0.000019813784,0.0015829502,0.00008900584,0.000017300079,0.00013985155,0.00010172767,0.0009340324,0.9927134,0.0016072041,0.00007575614,0.0026465904],"study_design_scores_gemma":[0.000008527809,0.00017315353,0.009244636,0.000023589393,0.000019700692,0.0002149801,0.00008014739,0.009314256,0.97896725,0.0007140673,0.0012281334,0.00001153081],"about_ca_topic_score_codex":0.00031669135,"about_ca_topic_score_gemma":0.00038627657,"teacher_disagreement_score":0.0007655384,"about_ca_system_score_codex":0.00017834287,"about_ca_system_score_gemma":0.00008569228,"threshold_uncertainty_score":0.0025609732},"labels":[],"label_agreement":null},{"id":"W4416745628","doi":"10.1016/j.jpcs.2025.113409","title":"Oxygen addition effect on RF sputter fabricated amorphous IGZO thin films investigated in-situ using photoelectron spectroscopy","year":2025,"lang":"en","type":"article","venue":"Journal of Physics and Chemistry of Solids","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":false,"route_ca_aff":false,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"","funders":"Institute for Information and Communications Technology Promotion; National Research Foundation of Korea; Ministry of Science and ICT, South Korea; Chungbuk National University; Information Technology Research Centre; National Research Foundation","keywords":"X-ray photoelectron spectroscopy; Amorphous solid; Sputtering; Oxygen; Thin film; Analytical Chemistry (journal); Valence (chemistry)","score_opus":0.006209264808012517,"score_gpt":0.21337473873894172,"score_spread":0.2071654739309292,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4416745628","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9979261,0.00029277604,0.0005126597,0.000038155726,0.000020636971,0.000005365403,0.00011456628,0.000028436274,0.0010613591],"genre_scores_gemma":[0.99770653,0.0002281898,0.0006866788,0.000022716635,0.0000055981386,0.000005588899,0.00008281474,0.000014623023,0.0012471233],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99992514,0.000004557583,0.000003299974,0.000018322748,0.000025279362,0.000023329161],"domain_scores_gemma":[0.9998877,0.000043585056,0.000027225145,0.000011369842,0.00002081276,0.000009308442],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00008089918,0.00021927935,0.00023310451,0.00016166815,0.0002310088,0.00033296656,0.00028492595,0.0003039626,0.0021734869],"category_scores_gemma":[0.00018592556,0.00020108679,0.00012227448,0.00017533032,0.00020268293,0.000258336,0.00014212809,0.00037694085,0.00018616735],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00007282619,0.0000074758937,0.00018016371,0.000038636663,0.000005419505,0.000068695794,0.00004087139,0.00003225386,0.99883956,0.000039330567,0.00003035986,0.00064440735],"study_design_scores_gemma":[0.0000068180107,0.00008812814,0.00409138,0.000006823898,0.000014284658,0.000062195824,0.00007818853,0.00042112888,0.9946414,0.000016424801,0.00057061715,0.0000025774832],"about_ca_topic_score_codex":0.0008028058,"about_ca_topic_score_gemma":0.0019529318,"teacher_disagreement_score":0.0021734869,"about_ca_system_score_codex":0.00017502363,"about_ca_system_score_gemma":0.000095778276,"threshold_uncertainty_score":0.0072710514},"labels":[],"label_agreement":null},{"id":"W4416798008","doi":"10.1109/jflex.2025.3638974","title":"A Flexible Decoder With Charge-Sharing Feature for TFT Display Backplanes","year":2025,"lang":"","type":"article","venue":"IEEE Journal on Flexible Electronics","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Backplane; CMOS; Feature (linguistics); Transistor; Power (physics); Electronic circuit; Liquid-crystal display; Power consumption; Logic gate; Thin-film transistor","score_opus":0.011466106922064677,"score_gpt":0.25451182536664935,"score_spread":0.24304571844458467,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4416798008","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.8186694,0.0020691918,0.16372351,0.00047386382,0.00032520544,0.0001652307,0.00086609455,0.002851699,0.010855834],"genre_scores_gemma":[0.9427917,0.000496707,0.05041107,0.0002302005,0.000045106954,0.000037616457,0.0003577488,0.00009700639,0.0055328426],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998882,0.000009299032,0.000007774961,0.000025520945,0.0000517594,0.000017529419],"domain_scores_gemma":[0.99984384,0.000024659896,0.000032077227,0.000022146723,0.000060846978,0.000016394759],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00007725941,0.000322506,0.00024087864,0.00021671962,0.00020960093,0.00039845819,0.0006031466,0.0004772516,0.0015196428],"category_scores_gemma":[0.00028619656,0.00013777833,0.00018188819,0.0002481849,0.00013109492,0.00044561966,0.00022877786,0.0002599546,0.000739678],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00012265862,0.00003769246,0.00083683134,0.00012145548,0.000021565918,0.0004569358,0.000060916405,0.0011963985,0.97275394,0.0007830886,0.0014070836,0.022201348],"study_design_scores_gemma":[0.000029899695,0.0004783896,0.0018552976,0.000021109734,0.000041005773,0.0010902494,0.00004352372,0.03006324,0.95700943,0.00019206128,0.009145376,0.00003052578],"about_ca_topic_score_codex":0.000716959,"about_ca_topic_score_gemma":0.0014366761,"teacher_disagreement_score":0.0015196428,"about_ca_system_score_codex":0.00031806563,"about_ca_system_score_gemma":0.00024054539,"threshold_uncertainty_score":0.0050837398},"labels":[],"label_agreement":null},{"id":"W44680532","doi":"","title":"The Optical Response of Hydrogenated Amorphous Silicon","year":2011,"lang":"en","type":"article","venue":"Scholarship at UWindsor (University of Windsor)","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":2,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Windsor","funders":"","keywords":"Density of states; Amorphous silicon; Dimensionless quantity; Condensed matter physics; Semimetal; Silicon; Materials science; Thermal conduction; Band gap; Amorphous solid; Formalism (music); Quasi Fermi level; Statistical physics; Molecular physics; Computational physics; Physics; Chemistry; Quantum mechanics; Crystalline silicon; Optoelectronics; Crystallography","score_opus":0.01936885321716513,"score_gpt":0.17995727315561114,"score_spread":0.160588419938446,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W44680532","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99249333,0.00026701955,0.0047255233,0.00002496797,0.000008195099,0.000011874958,0.0003741487,0.00006729071,0.0020276906],"genre_scores_gemma":[0.9973847,0.00022261162,0.001482475,0.00002086791,0.0000024301953,0.000010933789,0.00033537849,0.0000080646,0.000532546],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9997998,0.000033177497,0.000008786651,0.000050336406,0.00008508729,0.000022795688],"domain_scores_gemma":[0.99961984,0.00021148955,0.000048406215,0.000040363986,0.000070012946,0.0000098603605],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00031398234,0.00018506986,0.00016600729,0.00032765832,0.00013373641,0.000271951,0.00035395165,0.0003487211,0.0010948443],"category_scores_gemma":[0.0005530619,0.00013897721,0.00023746224,0.00051626,0.00032457756,0.00028592546,0.00020786982,0.00034663774,0.00015650662],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00022628893,0.00006506961,0.0022413142,0.00014543778,0.000046743124,0.000120633464,0.00015872235,0.015025941,0.97391045,0.0009508114,0.0001974243,0.006911161],"study_design_scores_gemma":[0.000015431846,0.00060062663,0.018467505,0.000021125768,0.000033963683,0.00013367391,0.00031889213,0.09549233,0.8833319,0.0004345764,0.0011091372,0.000040787912],"about_ca_topic_score_codex":0.0011311593,"about_ca_topic_score_gemma":0.0011467737,"teacher_disagreement_score":0.0011311593,"about_ca_system_score_codex":0.0003168369,"about_ca_system_score_gemma":0.00011352195,"threshold_uncertainty_score":0.0036626458},"labels":[],"label_agreement":null},{"id":"W50477469","doi":"","title":"Solution Processable Semiconductor Thin Films: Correlation Between Morphological, Structural, Optical and Charge Transport Properties","year":2013,"lang":"en","type":"article","venue":"PolyPublie (École Polytechnique de Montréal)","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"","funders":"Office of Naval Research; Natural Sciences and Engineering Research Council of Canada; Provincia Autonoma di Trento; Université de Montréal; Royal Society of Chemistry","keywords":"Physics; Humanities; Physical chemistry; Chemistry; Art","score_opus":0.014453417925444256,"score_gpt":0.19612555688964797,"score_spread":0.18167213896420373,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W50477469","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9877679,0.006600157,0.0024920506,0.00041599642,0.00013541106,0.000026607371,0.00024834726,0.00005267687,0.002260815],"genre_scores_gemma":[0.9746991,0.0069588074,0.0043063047,0.00018789497,0.000040772084,0.00003428145,0.00042394118,0.00003252774,0.0133164],"study_design_codex":"bench_or_experimental","study_design_gemma":"observational","domain_scores_codex":[0.9999155,0.000007018472,0.000005648468,0.000023953744,0.000034470966,0.000013462383],"domain_scores_gemma":[0.9998319,0.00005815505,0.000038721,0.000005793934,0.000051044302,0.000014307695],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00013839996,0.00017120875,0.00021414875,0.00021057785,0.0001371234,0.0004641878,0.0001535684,0.00042428396,0.0034261586],"category_scores_gemma":[0.00026105414,0.00014418011,0.00014677236,0.00018983737,0.000106938234,0.000333072,0.0001394813,0.00029128118,0.00045899162],"study_design_candidate":"observational","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00010908431,0.000033928758,0.0010294205,0.00017353996,0.000014347335,0.00008567966,0.0000413408,0.00021016407,0.9901731,0.00018525275,0.00029140152,0.007652675],"study_design_scores_gemma":[0.000013777756,0.00025734142,0.0064548487,0.00001708133,0.00002691415,0.00017558818,0.00008992832,0.0020422707,0.98693615,0.00008679778,0.003887359,0.000011913527],"about_ca_topic_score_codex":0.0005876542,"about_ca_topic_score_gemma":0.0014281343,"teacher_disagreement_score":0.0034261586,"about_ca_system_score_codex":0.00022661797,"about_ca_system_score_gemma":0.00016334644,"threshold_uncertainty_score":0.011461675},"labels":[],"label_agreement":null},{"id":"W59790544","doi":"10.1023/a:1026127020267","title":"Conductance fluctuations in a-Si : H: effects of alloying and device structure","year":2003,"lang":"en","type":"article","venue":"Journal of Materials Science Materials in Electronics","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":2,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Saskatchewan","funders":"Natural Sciences and Engineering Research Council of Canada; Abertay University","keywords":"Spectral line; Electrode; Noise (video); Transverse plane; Materials science; Conductance; Power law; Thin film; Analytical Chemistry (journal); Condensed matter physics; Physics; Chemistry; Nanotechnology; Mathematics","score_opus":0.005934091139632248,"score_gpt":0.2206362880354381,"score_spread":0.21470219689580586,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W59790544","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9966768,0.00022107028,0.0016313967,0.00016947508,0.000021706799,0.0000069769044,0.000144718,0.00017163692,0.0009562362],"genre_scores_gemma":[0.9995845,0.000025302123,0.00012946122,0.000009989805,0.000004720988,0.0000016992752,0.00003528239,0.000015382207,0.00019351573],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99988234,0.000020841071,0.0000047548147,0.000033988177,0.000025806463,0.00003217325],"domain_scores_gemma":[0.9994236,0.00031161247,0.000052789866,0.000047758986,0.00010437432,0.0000599269],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00032510835,0.0001919469,0.00031255174,0.0003124174,0.0002470863,0.00047284676,0.00036736988,0.00048479432,0.0014363826],"category_scores_gemma":[0.0011559712,0.00022424932,0.00017128924,0.0003021006,0.000489504,0.00047038007,0.00017737724,0.00037798332,0.00024715345],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0013827215,0.00020164954,0.007944806,0.0001162353,0.00007871912,0.0008623622,0.00035079656,0.019295048,0.9575455,0.0028980614,0.002063645,0.007260364],"study_design_scores_gemma":[0.00009835124,0.00062162266,0.046854127,0.000025208152,0.00008938906,0.00058177364,0.00029058504,0.41820478,0.5300413,0.002078929,0.0010312032,0.000082716324],"about_ca_topic_score_codex":0.0014602197,"about_ca_topic_score_gemma":0.0019208485,"teacher_disagreement_score":0.0014602197,"about_ca_system_score_codex":0.00050044846,"about_ca_system_score_gemma":0.00018266874,"threshold_uncertainty_score":0.0048052073},"labels":[],"label_agreement":null},{"id":"W620625916","doi":"","title":"Low temperature p+ nc-Si:H window layers for large area thin-film solar cells","year":2007,"lang":"en","type":"dissertation","venue":"Summit (Simon Fraser University)","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"","funders":"Natural Sciences and Engineering Research Council of Canada; British Columbia Knowledge Development Fund; Simon Fraser University","keywords":"Materials science; Thin film; Plasma-enhanced chemical vapor deposition; Solar cell; Chemical vapor deposition; Amorphous solid; Substrate (aquarium); Amorphous silicon; Silicon; Nanocrystalline material; Nanocrystalline silicon; Layer (electronics); Fabrication; Optoelectronics; Doping; Nanotechnology; Chemical engineering; Analytical Chemistry (journal); Crystalline silicon; Chemistry; Crystallography","score_opus":0.006924835489178145,"score_gpt":0.1973477517396179,"score_spread":0.19042291625043978,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W620625916","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.94817483,0.017902533,0.01456929,0.00026460263,0.00022588286,0.00018190817,0.0006968686,0.00033746165,0.017646639],"genre_scores_gemma":[0.94446343,0.018202273,0.02099988,0.00005668858,0.00007326308,0.00012364307,0.0005615253,0.000068928595,0.0154503435],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999628,0.0000017193562,0.000002240723,0.000008113399,0.000019954326,0.0000051393586],"domain_scores_gemma":[0.9999627,0.000009656406,0.0000068566246,0.0000035418798,0.000012029437,0.000005149862],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000094865856,0.00025764064,0.00016174925,0.00018388379,0.00019371603,0.00031888936,0.00022218045,0.00020480604,0.0019301038],"category_scores_gemma":[0.00012831615,0.00016322982,0.00013417235,0.00017370291,0.00007934577,0.0002801044,0.00012934092,0.00037126438,0.00051816594],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0000114415,0.0000095644455,0.000058579946,0.00006482712,0.0000032773132,0.000025929823,0.000013882159,0.00013682488,0.9960891,0.00011385254,0.0001881685,0.0032845242],"study_design_scores_gemma":[0.000007312865,0.00011441406,0.0013870738,0.000012202117,0.000014102047,0.00007984708,0.000023378616,0.0012337138,0.9919785,0.00006360782,0.0050811814,0.000004659564],"about_ca_topic_score_codex":0.0008710357,"about_ca_topic_score_gemma":0.0026751324,"teacher_disagreement_score":0.0019301038,"about_ca_system_score_codex":0.0002664667,"about_ca_system_score_gemma":0.00025483023,"threshold_uncertainty_score":0.0064569116},"labels":[],"label_agreement":null},{"id":"W6884441241","doi":"10.1021/am201656h.s001","title":"Schottky Barrier Thin\\nFilm Transistors Using Solution-Processed &lt;i&gt;n&lt;/i&gt;‑ZnO","year":2016,"lang":"en","type":"article","venue":"Figshare","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Alberta","funders":"","keywords":"Ohmic contact; Schottky barrier; Transistor; Schottky diode; Thin-film transistor; Metal–semiconductor junction; Static induction transistor","score_opus":0.02437088652378155,"score_gpt":0.21534156359736334,"score_spread":0.19097067707358178,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W6884441241","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9674452,0.0013303113,0.017941887,0.00018942321,0.00025767967,0.0001196941,0.0006581421,0.00036418665,0.0116935],"genre_scores_gemma":[0.96841365,0.0010095595,0.023890883,0.00006951301,0.000024590936,0.00010003316,0.0003891469,0.000072548246,0.006030089],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999342,0.000002678086,0.0000041644566,0.000024973402,0.000023831377,0.000010082221],"domain_scores_gemma":[0.99995875,0.0000083712,0.000010586852,0.0000048600577,0.000010880591,0.0000065840795],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000089465204,0.00025957095,0.00017806863,0.00012555174,0.00012388917,0.0002511899,0.0005024167,0.00022601678,0.0011094413],"category_scores_gemma":[0.00015969311,0.00016093988,0.00014495234,0.000117486634,0.00018742622,0.0003207539,0.00016034617,0.00032859083,0.00042636634],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000012923554,0.0000050261556,0.000038384565,0.000019147887,0.0000010378609,0.00001943837,0.0000080694945,0.000025418238,0.9991233,0.00011541366,0.000044697015,0.00058715895],"study_design_scores_gemma":[0.000010278601,0.00006202568,0.0006650705,0.00000434201,0.0000044805797,0.000040909654,0.000012441521,0.0012896036,0.9962198,0.0000489119,0.0016382021,0.0000038903713],"about_ca_topic_score_codex":0.0013206531,"about_ca_topic_score_gemma":0.0041145263,"teacher_disagreement_score":0.0013206531,"about_ca_system_score_codex":0.0004001006,"about_ca_system_score_gemma":0.00015321751,"threshold_uncertainty_score":0.003711462},"labels":[],"label_agreement":null},{"id":"W6904633055","doi":"10.14288/1.0449429","title":"Material characterization of silicon thin-films grown by ultra-high-vacuum evaporation","year":2025,"lang":"en","type":"article","venue":"cIRcle (University of British Columbia)","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":true,"ca_institutions":"","funders":"","keywords":"Raman spectroscopy; Silicon; Substrate (aquarium); Nanocrystalline silicon; Thin film; Diffraction; Evaporation; Characterization (materials science)","score_opus":0.0032220975291862705,"score_gpt":0.1462902292785455,"score_spread":0.14306813174935926,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W6904633055","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.98758197,0.0016095829,0.0037998005,0.0000671921,0.000043566568,0.00006118996,0.0018974133,0.00010003195,0.0048392643],"genre_scores_gemma":[0.9747883,0.002306,0.014790689,0.00006430581,0.000015629797,0.00013110679,0.003328454,0.00009623938,0.004479187],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998672,0.0000064110563,0.000008648907,0.00002875336,0.0000720854,0.000016747168],"domain_scores_gemma":[0.999814,0.000045483608,0.000032304175,0.000026941105,0.00007262169,0.000008704871],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00016581049,0.0002031897,0.00022487732,0.00058992277,0.00037227198,0.0003768088,0.00039658748,0.00026748615,0.0014103109],"category_scores_gemma":[0.00025031916,0.00020909551,0.00021163157,0.0005614271,0.00017355589,0.00023292677,0.00015414407,0.00031734357,0.00035929313],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000019595138,0.00000861496,0.00059117394,0.000072977644,0.000008710478,0.00006715199,0.00004945243,0.00015925942,0.9967152,0.00010112183,0.000105777064,0.0021010109],"study_design_scores_gemma":[0.0000038338258,0.00009148979,0.010602642,0.000021756485,0.000012414986,0.00010145944,0.00011044777,0.0008312483,0.9856763,0.0000366976,0.002504046,0.0000075720527],"about_ca_topic_score_codex":0.00079614524,"about_ca_topic_score_gemma":0.0017486188,"teacher_disagreement_score":0.0014103109,"about_ca_system_score_codex":0.00024543406,"about_ca_system_score_gemma":0.00017135116,"threshold_uncertainty_score":0.004717946},"labels":[],"label_agreement":null},{"id":"W6904711534","doi":"10.14288/1.0413302","title":"The optical response of silicon thin-films grown by ultra-high-vacuum evaporation","year":2022,"lang":"en","type":"article","venue":"cIRcle (University of British Columbia)","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":true,"ca_institutions":"","funders":"","keywords":"Silicon; Raman spectroscopy; Refractive index; Nanocrystalline silicon; Evaporation; Specular reflection; Porous silicon","score_opus":0.004823269942140302,"score_gpt":0.15387804503822478,"score_spread":0.14905477509608447,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W6904711534","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9968659,0.00068043283,0.0009076536,0.000018248475,0.00001230767,0.0000075395596,0.00015073398,0.000029833447,0.0013272214],"genre_scores_gemma":[0.9939646,0.00083372334,0.0031803995,0.000017571138,0.0000047799185,0.000014037136,0.00027595778,0.000020175403,0.0016888316],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998517,0.000013180324,0.000008133462,0.000027209706,0.000072854535,0.00002694438],"domain_scores_gemma":[0.99980205,0.00007801509,0.00003569067,0.000019384002,0.00005189447,0.000013140486],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00015704718,0.00024184468,0.00017826688,0.0003163633,0.00016930191,0.00025293633,0.00035266348,0.00027389682,0.00091388804],"category_scores_gemma":[0.00026932018,0.00022620693,0.00019520936,0.00032370116,0.00018780763,0.00017903531,0.000180005,0.0003988664,0.0002227143],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00002157408,0.000007599593,0.00029624658,0.000028188615,0.000005965894,0.000025789244,0.000024517287,0.00009502188,0.9987779,0.000027820966,0.000020498737,0.00066890876],"study_design_scores_gemma":[0.0000025338422,0.000084250925,0.0048476886,0.0000048752117,0.0000067246992,0.0000586882,0.000036251076,0.00075190054,0.993863,0.000009126092,0.00033118777,0.0000037475627],"about_ca_topic_score_codex":0.0011085443,"about_ca_topic_score_gemma":0.0018171647,"teacher_disagreement_score":0.0011085443,"about_ca_system_score_codex":0.00025265242,"about_ca_system_score_gemma":0.00013403245,"threshold_uncertainty_score":0.0030572414},"labels":[],"label_agreement":null},{"id":"W6966709176","doi":"10.48550/arxiv.cond-mat/0301496","title":"Energy landscape of relaxed amorphous silicon","year":2003,"lang":"en","type":"preprint","venue":"arXiv (Cornell University)","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Université de Montréal","funders":"","keywords":"Energy landscape; Amorphous silicon; Energy (signal processing); Silicon; Relaxation (psychology); Amorphous solid; Distribution (mathematics)","score_opus":0.02938890022312742,"score_gpt":0.1415767693175488,"score_spread":0.1121878690944214,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W6966709176","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9875646,0.00015504037,0.0066714473,0.00026977083,0.000007019225,0.0000108774575,0.00022948688,0.000078552206,0.0050131595],"genre_scores_gemma":[0.99705434,0.00008813198,0.0016806062,0.00003329079,0.0000038537005,0.000021851987,0.00026886363,0.000027025193,0.00082200393],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9998888,0.00003032609,0.0000039667493,0.000017926332,0.000025358268,0.000033650293],"domain_scores_gemma":[0.999752,0.000112528025,0.000030967054,0.00003306955,0.000035377296,0.000035986362],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0002596638,0.00034794072,0.0005066823,0.0006640124,0.00056688784,0.0009541979,0.00072194764,0.0007614855,0.0026318117],"category_scores_gemma":[0.00085590803,0.00031154827,0.0004494932,0.00046146684,0.00079601316,0.00088506076,0.00038050194,0.00041337186,0.00017213375],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00019215008,0.000055309734,0.002159694,0.000042916574,0.00006762029,0.00030247966,0.00005890195,0.9656674,0.012808353,0.016740989,0.00043449347,0.0014696307],"study_design_scores_gemma":[0.000032963955,0.00007830115,0.0014471132,0.000005030779,0.000017992012,0.00003878895,0.000040227253,0.98931175,0.0012455288,0.0075096055,0.00025886035,0.000013739219],"about_ca_topic_score_codex":0.004574998,"about_ca_topic_score_gemma":0.0033153663,"teacher_disagreement_score":0.004574998,"about_ca_system_score_codex":0.0010239118,"about_ca_system_score_gemma":0.00043020325,"threshold_uncertainty_score":0.009096682},"labels":[],"label_agreement":null},{"id":"W6996685737","doi":"","title":"«In situ» study of amorphous semiconductor crystallization by dynamic transmission electron microscopy","year":2010,"lang":"en","type":"other","venue":"Library and Archives Canada (Government of Canada)","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":false,"route_ca_venue":true,"route_about_ca":false,"ca_institutions":"","funders":"","keywords":"Amorphous silicon; Crystallization; Transmission electron microscopy; Amorphous solid; Context (archaeology); Thin-film transistor; Silicon; Amorphous semiconductors","score_opus":0.0013293107486476066,"score_gpt":0.1443183361821379,"score_spread":0.1429890254334903,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W6996685737","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9234414,0.0026104574,0.04785807,0.00036528695,0.00008169104,0.00010057527,0.00107831,0.00038190253,0.024082273],"genre_scores_gemma":[0.96372175,0.0013735153,0.028288733,0.00006215617,0.000021898293,0.00004176906,0.00033567502,0.00007391971,0.0060805078],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999249,0.000007853181,0.0000038091575,0.000017768225,0.000032884043,0.00001271948],"domain_scores_gemma":[0.9998914,0.000034996738,0.000014050488,0.000025667772,0.000026408357,0.000007355427],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00012686859,0.00017398686,0.0001442732,0.00025482633,0.00040711474,0.00044564749,0.00037025387,0.00018888748,0.001392752],"category_scores_gemma":[0.00017449674,0.00014704777,0.00008958497,0.00021550205,0.00033556262,0.00035911283,0.00018633269,0.00047288372,0.00026249248],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0000149125435,0.000014876196,0.00019659653,0.000027913116,0.0000020328025,0.000073087074,0.000043153963,0.00012438175,0.99684566,0.0007296872,0.00013990367,0.0017878772],"study_design_scores_gemma":[0.0000060150537,0.000028894594,0.0017492422,0.0000048466163,0.0000047952526,0.0003574043,0.00005258949,0.0033687456,0.99013525,0.00017056454,0.004116581,0.0000049794166],"about_ca_topic_score_codex":0.0023196163,"about_ca_topic_score_gemma":0.0028474147,"teacher_disagreement_score":0.0023196163,"about_ca_system_score_codex":0.00036780286,"about_ca_system_score_gemma":0.0001823042,"threshold_uncertainty_score":0.0046592355},"labels":[],"label_agreement":null},{"id":"W7007930300","doi":"","title":"An Amorphous to Crystalline Phase Transition within Silicon Films Grown by Ultra-High-Vacuum Evaporation on Silica: The Impact on the Optical Absorption Spectrum","year":2007,"lang":"en","type":"article","venue":"NPARC","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":false,"route_ca_venue":true,"route_about_ca":false,"ca_institutions":"","funders":"","keywords":"Evaporation; Silicon; Amorphous solid; Absorption (acoustics); Phase transition; Phase (matter); Absorption spectroscopy; Crystalline silicon","score_opus":0.009798661842996126,"score_gpt":0.2456298839482122,"score_spread":0.23583122210521607,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W7007930300","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9955745,0.00035573106,0.00110262,0.00007211919,0.000031618994,0.000006847204,0.00006553964,0.000060218492,0.002730854],"genre_scores_gemma":[0.99840975,0.00014109483,0.00033724934,0.000025302557,0.000006699486,0.0000031905288,0.000049810456,0.00002090219,0.0010060915],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99995434,0.000005313419,0.0000023065024,0.000010437493,0.000016530403,0.000011058792],"domain_scores_gemma":[0.9997813,0.00013183072,0.00002764039,0.000016914853,0.000025452353,0.000016812104],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00008549451,0.000098170516,0.00010110583,0.00017725045,0.00029067197,0.00052501675,0.00016213946,0.00022352589,0.0015793525],"category_scores_gemma":[0.00028942095,0.00018858102,0.00013651245,0.00014522819,0.00037786315,0.00031607598,0.0001418473,0.00045847634,0.0001801245],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00015606433,0.000039919123,0.00083986745,0.00005102667,0.00000996598,0.00015081995,0.00010725664,0.0001973877,0.9953886,0.00087502133,0.00019053069,0.0019934643],"study_design_scores_gemma":[0.000017120394,0.00021828857,0.005687158,0.0000069277608,0.0000146763405,0.00010388863,0.000103271836,0.0014347197,0.99118197,0.00023355645,0.000992296,0.00000606997],"about_ca_topic_score_codex":0.00079211476,"about_ca_topic_score_gemma":0.0012989776,"teacher_disagreement_score":0.0015793525,"about_ca_system_score_codex":0.00014497859,"about_ca_system_score_gemma":0.00016896115,"threshold_uncertainty_score":0.0052834153},"labels":[],"label_agreement":null},{"id":"W7033800628","doi":"","title":"Silicon Nitride and Silicon Dioxide Thin Insulating Films (Sixth International Symposium)","year":2001,"lang":"en","type":"book","venue":"NPARC","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":false,"route_ca_venue":true,"route_about_ca":false,"ca_institutions":"","funders":"","keywords":"Silicon nitride; Dielectric; Silicon dioxide; Substrate (aquarium); Silicon; Thin film; Quantum tunnelling; Nitride","score_opus":0.009242297062217133,"score_gpt":0.20145859082353668,"score_spread":0.19221629376131955,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W7033800628","genre_codex":"other","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.005099021,0.16672583,0.010642069,0.0032340006,0.030648379,0.00013354766,0.0008324327,0.0008090463,0.78187567],"genre_scores_gemma":[0.004351776,0.0351152,0.003183613,0.00041572022,0.0012325721,0.00002471058,0.0005913664,0.000089746434,0.9549953],"study_design_codex":"not_applicable","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998729,0.000008186333,0.000004805379,0.000017169757,0.000081417165,0.000015557762],"domain_scores_gemma":[0.9998697,0.000016877546,0.000007172854,0.000009651301,0.00006477152,0.000031822656],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00022269816,0.00091431744,0.00041609208,0.0008693318,0.00042744417,0.0013620418,0.00059452216,0.000703202,0.05727342],"category_scores_gemma":[0.00024114127,0.00028605005,0.0002952171,0.000808528,0.00017275299,0.0010101522,0.00043713333,0.0009920318,0.035211686],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00007032502,0.00008259795,0.00022318424,0.00043228528,0.00001745249,0.00018436201,0.000095627336,0.0003681861,0.009166333,0.008216781,0.5936743,0.38746867],"study_design_scores_gemma":[0.000003713837,0.00003938959,0.00043159895,0.0001017604,0.000008506054,0.0001993786,0.000023963672,0.000203433,0.0012029643,0.001411956,0.9963691,0.0000041423027],"about_ca_topic_score_codex":0.0010908658,"about_ca_topic_score_gemma":0.0051212213,"teacher_disagreement_score":0.05727342,"about_ca_system_score_codex":0.00043898486,"about_ca_system_score_gemma":0.00070800964,"threshold_uncertainty_score":0.19159865},"labels":[],"label_agreement":null},{"id":"W7043696884","doi":"","title":"Thin film transistors from II-IV semiconductors on polymer substrates","year":2006,"lang":"en","type":"dissertation","venue":"eScholarship@McGill (McGill)","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"","funders":"McGill University","keywords":"Thin-film transistor; Fabrication; Microfabrication; Polymer; Thin film; Transistor; Semiconductor","score_opus":0.01118828616761774,"score_gpt":0.1998915047664659,"score_spread":0.18870321859884814,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W7043696884","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.45652473,0.02440325,0.08863407,0.002185731,0.0017897013,0.00043408526,0.0017968038,0.0017821867,0.42244953],"genre_scores_gemma":[0.49593398,0.04391435,0.061338663,0.000570042,0.0002564179,0.00028239586,0.001297383,0.0003230289,0.39608377],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99992895,0.0000037430568,0.0000028284567,0.000011313589,0.000041120045,0.000011953896],"domain_scores_gemma":[0.99996483,0.000009931327,0.0000038501857,0.0000037841592,0.000011452996,0.0000061368105],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00007921204,0.00027956947,0.00017558293,0.00022859623,0.0002375236,0.00057861157,0.000244737,0.00017932695,0.0065674502],"category_scores_gemma":[0.00014011997,0.00023134603,0.00021203836,0.00022588085,0.00011507922,0.00028209618,0.00019122225,0.0005626217,0.003336262],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00001922351,0.000019734447,0.00006556923,0.00024538438,0.000005665619,0.00013211364,0.0001318307,0.0003347654,0.9615259,0.0042821984,0.0037546512,0.029482964],"study_design_scores_gemma":[0.000015585993,0.000115222356,0.00088404847,0.00009486676,0.000012590026,0.00021467182,0.000058998616,0.0011603516,0.90601194,0.0013573506,0.090065055,0.000009286101],"about_ca_topic_score_codex":0.0004510287,"about_ca_topic_score_gemma":0.0013184405,"teacher_disagreement_score":0.0065674502,"about_ca_system_score_codex":0.0003212564,"about_ca_system_score_gemma":0.00019050359,"threshold_uncertainty_score":0.021970332},"labels":[],"label_agreement":null},{"id":"W7071955756","doi":"","title":"Threshold Voltage Instability and Relaxation in Hydrogenated Amorphous Silicon Thin Film Transistors","year":2006,"lang":"en","type":"dissertation","venue":"UWSpace (University of Waterloo)","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"","funders":"Natural Sciences and Engineering Research Council of Canada; University of Waterloo","keywords":"Threshold voltage; Voltage; Stress (linguistics); High voltage; Noise (video)","score_opus":0.005895530633126013,"score_gpt":0.16632711131697242,"score_spread":0.16043158068384641,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W7071955756","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9741165,0.0059549524,0.016744846,0.00012375791,0.000027083945,0.000019450767,0.000095533534,0.00008459783,0.002833351],"genre_scores_gemma":[0.9965432,0.0012348408,0.0013468356,0.000013107702,0.000011387723,0.000007418398,0.000041417166,0.000008110089,0.0007935403],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999336,0.0000060570037,0.0000032917794,0.000018427465,0.000029030036,0.000009474056],"domain_scores_gemma":[0.99990535,0.00004817941,0.000022531049,0.000005075869,0.00001400624,0.0000048438533],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00010086153,0.00013032912,0.00017643094,0.00019034705,0.00013689477,0.00028234939,0.00025812822,0.00024625938,0.0004015191],"category_scores_gemma":[0.00028812973,0.0000843534,0.00023036216,0.0001724426,0.00021853336,0.0003293379,0.000107657,0.00027104115,0.00006110988],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00010913051,0.0000422156,0.0027234317,0.000286709,0.00003876168,0.0008216898,0.0002533632,0.020392489,0.9571257,0.005714462,0.00017123802,0.012320758],"study_design_scores_gemma":[0.000023223754,0.00073503004,0.01836248,0.000065079235,0.00006789153,0.0017245087,0.0002956748,0.4248642,0.54321635,0.0053246366,0.005272077,0.000048826958],"about_ca_topic_score_codex":0.00078308047,"about_ca_topic_score_gemma":0.00036776587,"teacher_disagreement_score":0.00078308047,"about_ca_system_score_codex":0.00041875493,"about_ca_system_score_gemma":0.00012084722,"threshold_uncertainty_score":0.0030382872},"labels":[],"label_agreement":null},{"id":"W7098338201","doi":"","title":"1 Cell Host &amp;amp; Microbe, Volume 2 Supplemental Data Heparan Sulfate Proteoglycans Provide a Signal to Plasmodium Sporozoites to Stop Migrating and Productively Invade Host Cells","year":2014,"lang":"en","type":"article","venue":"","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":true,"ca_institutions":"","funders":"","keywords":"Uronic acid; Centrifugation; Ion chromatography; Heparin; Balanced salt solution; Ion exchange; Pronase; Cell culture; Elution","score_opus":0.01830609920562962,"score_gpt":0.21893415232754906,"score_spread":0.20062805312191945,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W7098338201","genre_codex":"other","genre_gemma":"other","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"other","genre_consensus":"other","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.03258967,0.003408352,0.037526008,0.0038895844,0.0054896777,0.002235544,0.42790103,0.031813644,0.45514637],"genre_scores_gemma":[0.045128487,0.0020301235,0.03538266,0.0009915435,0.00051983964,0.0019550093,0.2617993,0.004876884,0.6473161],"study_design_codex":"not_applicable","study_design_gemma":"not_applicable","domain_scores_codex":[0.9994405,0.00003480515,0.000036683257,0.00010393129,0.00027982215,0.00010421982],"domain_scores_gemma":[0.9993249,0.00013259749,0.00002763929,0.00017217995,0.00013792257,0.0002046974],"candidate_categories":["insufficient_payload"],"consensus_categories":["insufficient_payload"],"category_scores_codex":[0.0004925414,0.0012074059,0.0010216229,0.0017220557,0.0011550587,0.0017608771,0.0012303407,0.00093355303,0.38022682],"category_scores_gemma":[0.0008387951,0.0008406402,0.00056172226,0.000857935,0.00024988447,0.00075107155,0.0009600812,0.001624861,0.19871804],"study_design_candidate":"not_applicable","study_design_consensus":"not_applicable","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0007090758,0.0009799426,0.0008788938,0.0008433329,0.000044304747,0.00046409597,0.000091477246,0.00032618264,0.3413619,0.0039857794,0.57638997,0.07392513],"study_design_scores_gemma":[0.00010660786,0.00021907667,0.0043194043,0.00007729814,0.000031590647,0.00032867925,0.000023041632,0.000844646,0.1447673,0.0004712985,0.84877604,0.00003507985],"about_ca_topic_score_codex":0.0011707051,"about_ca_topic_score_gemma":0.0040850174,"teacher_disagreement_score":0.61977315,"about_ca_system_score_codex":0.00064027635,"about_ca_system_score_gemma":0.0010581611,"threshold_uncertainty_score":0.88403124},"labels":[],"label_agreement":null},{"id":"W7106278174","doi":"10.1021/acsaelm.5c02047","title":"Fine-Tuned <i>V</i> <sub>th</sub> for Logic Reconfigurability in Dual-Gate Zinc Oxynitride Transistors","year":2025,"lang":"en","type":"article","venue":"ACS Applied Electronic Materials","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Ottawa","funders":"National Research Foundation of Korea; Gachon University","keywords":"Logic gate; Transistor; NMOS logic; Inverter; Reconfigurability; Parylene; Threshold voltage; NOR logic; Coupling (piping)","score_opus":0.006530431250749299,"score_gpt":0.2046128518635894,"score_spread":0.19808242061284012,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W7106278174","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9893798,0.00031457178,0.008704482,0.000082600665,0.0000344021,0.000010642941,0.00012046406,0.0001132292,0.0012396873],"genre_scores_gemma":[0.9955266,0.00016062315,0.0038699147,0.000016498994,0.0000038663748,0.0000048825805,0.000022967657,0.000011886375,0.00038263627],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999708,0.0000013047337,0.0000013115376,0.000009704843,0.000009918552,0.0000069935504],"domain_scores_gemma":[0.9999503,0.000015558224,0.000015247323,0.0000057050984,0.000006507882,0.0000066668454],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000044001565,0.00019204704,0.00013241344,0.000069122034,0.00011210542,0.00023537492,0.00026397043,0.000186753,0.00045830198],"category_scores_gemma":[0.0001543859,0.00009205698,0.000073189556,0.000079430254,0.00029979605,0.00022256166,0.0001271155,0.00023542721,0.00011717125],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000016780745,0.0000029830596,0.00015480223,0.000016695027,0.0000011825563,0.000031436783,0.000008307577,0.00026775192,0.9982515,0.0001374343,0.000029810533,0.0010812967],"study_design_scores_gemma":[0.0000057112993,0.000030419957,0.0007483537,0.000001948598,0.0000041989683,0.00007253822,0.000012393965,0.0049241106,0.99348575,0.000083137485,0.0006277971,0.000003781965],"about_ca_topic_score_codex":0.00046087845,"about_ca_topic_score_gemma":0.0012533076,"teacher_disagreement_score":0.00046087845,"about_ca_system_score_codex":0.00023671222,"about_ca_system_score_gemma":0.00007772525,"threshold_uncertainty_score":0.0017174482},"labels":[],"label_agreement":null},{"id":"W7126239251","doi":"10.1109/iedm50572.2025.11353484","title":"Enhancement-mode BEOL In <sub>2</sub> O <sub>3</sub> FETs with Record Logic Performance: Experiments and Compact Modeling","year":2025,"lang":"","type":"article","venue":"","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Transconductance; Threshold voltage; Transistor; Logic gate; Scalability; NAND gate; CMOS; Voltage; Channel (broadcasting)","score_opus":0.015818847550120016,"score_gpt":0.24090471816212577,"score_spread":0.22508587061200575,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W7126239251","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99416095,0.00014337461,0.0030314913,0.00011336598,0.000011274232,0.000011949781,0.0002282527,0.00013541257,0.0021639797],"genre_scores_gemma":[0.9914732,0.00025479324,0.0060877795,0.00002754818,0.00000907342,0.000019359546,0.00021046531,0.00003668709,0.0018810598],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999325,0.0000045967545,0.0000021016353,0.000015750802,0.00003221463,0.000012751483],"domain_scores_gemma":[0.99991477,0.00002779969,0.000018170245,0.00001107372,0.000019790088,0.000008439784],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00009931151,0.00029030305,0.00018608873,0.000074396004,0.00024086691,0.00041201006,0.0005161252,0.00034754237,0.0012431843],"category_scores_gemma":[0.00024218157,0.00010366622,0.00015823632,0.00017165516,0.00018344248,0.00056137494,0.00013461165,0.00018751597,0.0003943224],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00018624956,0.00006754685,0.001513293,0.000062871964,0.000017256563,0.0002668843,0.00013973493,0.0021862255,0.99031186,0.0012949696,0.0005973585,0.0033557275],"study_design_scores_gemma":[0.000031345277,0.00032640825,0.0031782999,0.0000071074905,0.000028464607,0.00021721736,0.00008249816,0.030853307,0.96145064,0.00046859297,0.0033385514,0.000017666256],"about_ca_topic_score_codex":0.0027398902,"about_ca_topic_score_gemma":0.00518975,"teacher_disagreement_score":0.0027398902,"about_ca_system_score_codex":0.000492551,"about_ca_system_score_gemma":0.00016680158,"threshold_uncertainty_score":0.005447924},"labels":[],"label_agreement":null},{"id":"W7132993688","doi":"","title":"Hydrogenated microcrystalline silicon thin film growth in the DC saddle field PECVD system","year":2006,"lang":"","type":"dissertation","venue":"TSpace","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Plasma-enhanced chemical vapor deposition; Microcrystalline silicon; Thin film; Substrate (aquarium); Raman scattering; Silicon; Amorphous silicon; Microcrystalline","score_opus":0.00833516995858586,"score_gpt":0.2361965990164228,"score_spread":0.22786142905783693,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W7132993688","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99406165,0.00020402418,0.004264854,0.000027441301,0.0000111876825,0.000021067644,0.0001739482,0.00006856358,0.0011672077],"genre_scores_gemma":[0.9899934,0.00026970566,0.008596224,0.000010526122,0.0000043448345,0.000031534775,0.00019462552,0.000017381477,0.0008822952],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99993455,0.000002804318,0.0000029206828,0.000024292796,0.000026603459,0.000008799829],"domain_scores_gemma":[0.99995637,0.000011275596,0.0000074605364,0.000007682794,0.000010873749,0.0000063089633],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000086729095,0.00017866083,0.00028933652,0.000115465926,0.00018671186,0.00020834325,0.00036350518,0.0001693812,0.00061288866],"category_scores_gemma":[0.00009854024,0.0001858219,0.000111541995,0.00019550405,0.00014339367,0.00016261108,0.00017407264,0.00027659742,0.000140603],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000026526433,0.000008659887,0.00025150017,0.0000331533,0.0000036789077,0.00004312787,0.000023995715,0.0008974282,0.99732095,0.00016283027,0.000039517297,0.001188605],"study_design_scores_gemma":[0.000016934018,0.00011946159,0.0024363948,0.0000034213735,0.000005394828,0.00008410697,0.000015680189,0.016692655,0.9793255,0.000055701537,0.0012387615,0.0000059775807],"about_ca_topic_score_codex":0.0021000695,"about_ca_topic_score_gemma":0.0023265537,"teacher_disagreement_score":0.0021000695,"about_ca_system_score_codex":0.00042046118,"about_ca_system_score_gemma":0.00023992738,"threshold_uncertainty_score":0.004175663},"labels":[],"label_agreement":null},{"id":"W7133081789","doi":"","title":"Density of states in hydrogenated and tritiated amorphous silicon thin films obtained using the constant photocurrent method","year":2004,"lang":"","type":"dissertation","venue":"TSpace","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"","funders":"University of Toronto; Universität Siegen","keywords":"Dangling bond; Amorphous silicon; Photocurrent; Density of states; Amorphous solid; Silicon; Fermi level; Photoconductivity","score_opus":0.02066473517561505,"score_gpt":0.3081466724949898,"score_spread":0.2874819373193747,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W7133081789","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.98626,0.0012484161,0.009480632,0.00003954782,0.000024402982,0.000014133845,0.00037906755,0.00009837563,0.0024554094],"genre_scores_gemma":[0.9914302,0.00083545566,0.005286873,0.000018465831,0.0000079921865,0.000016693279,0.00038198198,0.000023553153,0.0019986578],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99987566,0.000010837404,0.0000053953718,0.00003700799,0.000053667238,0.00001751306],"domain_scores_gemma":[0.9998522,0.000056735185,0.000022806298,0.000018123748,0.000041061674,0.000009093443],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0001558585,0.00014021406,0.00015479879,0.0004766903,0.00011803327,0.0002738864,0.00039775213,0.00019740849,0.0013605173],"category_scores_gemma":[0.0002106383,0.00013337981,0.00014814976,0.00042040707,0.00021836403,0.00020324705,0.00008354749,0.00042995275,0.00017448826],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00003135384,0.000008301138,0.00023411914,0.000019507015,0.0000051653114,0.000027837583,0.000024116844,0.00009065399,0.9977441,0.00015355459,0.000022221186,0.0016390564],"study_design_scores_gemma":[0.0000034711452,0.00008228755,0.0033533291,0.0000033803979,0.000011325535,0.00007522495,0.000021092157,0.0017032524,0.9943303,0.000058961792,0.00035336614,0.0000040362993],"about_ca_topic_score_codex":0.0012120289,"about_ca_topic_score_gemma":0.0013605853,"teacher_disagreement_score":0.0013605173,"about_ca_system_score_codex":0.00035006364,"about_ca_system_score_gemma":0.00010272234,"threshold_uncertainty_score":0.004551351},"labels":[],"label_agreement":null}]}