{"meta":{"query_hash":"e7875fa7288b","filters":{"venue":"IEEE Electron Device Letters"},"cohort_total":81,"direct_labels_cover":0,"predictions_cover":81,"exported":81,"export_cap":100000,"truncated":false,"label_status":"direct model label, unvalidated","prediction_status":"machine_predicted_unvalidated (Codex and Gemma teacher distillation)","score_status":"score_only:v0-immature-baseline","snapshot":{"source":"OpenAlex, pinned release, all 482 partitions","release":"2026-06-24","frame_built":"2026-07-12"},"permalink":"https://metacan.xera.ac/q/e7875fa7288b","api":"https://metacan.xera.ac/api/v1/cohort?venue=IEEE+Electron+Device+Letters"},"results":[{"id":"W1508961516","doi":"10.1109/led.2015.2456835","title":"Scaling Limit of Bilayer Phosphorene FETs","year":2015,"lang":"en","type":"article","venue":"IEEE Electron Device Letters","topic":"2D Materials and Applications","field":"Materials Science","cited_by":19,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Phosphorene; Bilayer; Field-effect transistor; Scaling; Materials science; Optoelectronics; Monolayer; Physics; Transistor; Nanotechnology; Chemistry; Quantum mechanics; Mathematics; Membrane; Voltage","score_opus":0.032214484364457736,"score_gpt":0.27168034022552773,"score_spread":0.23946585586107,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1508961516","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9636883,0.0013054999,0.010149612,0.0011822031,0.00007492853,0.0000370945,0.0005380662,0.0005848178,0.022439485],"genre_scores_gemma":[0.99520713,0.00042266917,0.0027350842,0.00008403556,0.000024070669,0.000045197456,0.00026128846,0.000050695417,0.0011698307],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998331,0.000019355472,0.0000068292493,0.000039811206,0.00006377583,0.000037083824],"domain_scores_gemma":[0.9995528,0.00019972138,0.00005710431,0.000044576063,0.00010308521,0.000042696167],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00021396037,0.0003707365,0.00043653784,0.00036509073,0.00039717808,0.0009257963,0.000494653,0.00087529805,0.0036509722],"category_scores_gemma":[0.0021209791,0.00027092436,0.0003160832,0.00027001486,0.00043687646,0.0015818041,0.00047160414,0.00044487373,0.0005814989],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0006360006,0.0003665841,0.007668527,0.00067426614,0.00019671353,0.0015756659,0.00059050234,0.21143693,0.6573652,0.08824175,0.009007113,0.02224076],"study_design_scores_gemma":[0.000052596013,0.00023680567,0.0020826275,0.0000476976,0.000053658034,0.0002485992,0.00013302318,0.9081852,0.06576553,0.01899269,0.0041579045,0.00004362484],"about_ca_topic_score_codex":0.002041346,"about_ca_topic_score_gemma":0.0011842281,"teacher_disagreement_score":0.0036509722,"about_ca_system_score_codex":0.00063636893,"about_ca_system_score_gemma":0.00033935983,"threshold_uncertainty_score":0.012213707},"labels":[],"label_agreement":null},{"id":"W1617416753","doi":"10.1109/led.2015.2472297","title":"A Theoretical Investigation of Orientation-Dependent Transport in Monolayer MoS&lt;sub&gt;2&lt;/sub&gt; Transistors at the Ballistic Limit","year":2015,"lang":"en","type":"article","venue":"IEEE Electron Device Letters","topic":"2D Materials and Applications","field":"Materials Science","cited_by":25,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McGill University","funders":"Natural Sciences and Engineering Research Council of Canada; National Natural Science Foundation of China","keywords":"Zigzag; Monolayer; Orientation (vector space); Materials science; Transistor; Condensed matter physics; Conduction band; Ballistic conduction; Physics; Crystallography; Nanotechnology; Chemistry; Quantum mechanics; Geometry; Mathematics; Voltage","score_opus":0.015793220018322163,"score_gpt":0.23609076051306155,"score_spread":0.22029754049473937,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1617416753","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.902345,0.001693993,0.05334585,0.0016340406,0.000078256046,0.00007813897,0.00037922102,0.00021159825,0.040233828],"genre_scores_gemma":[0.99169284,0.0007777811,0.004085956,0.00010281403,0.000023662746,0.000075579526,0.00013118023,0.00006664796,0.003043538],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99988186,0.000025015237,0.0000034388884,0.000013750845,0.000035524467,0.0000403619],"domain_scores_gemma":[0.99966145,0.00019576524,0.00003826292,0.000021634494,0.00005703671,0.00002580273],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0003767905,0.0004946365,0.00059362804,0.000639002,0.0008019739,0.00065275776,0.0010261989,0.0011550072,0.0025348414],"category_scores_gemma":[0.0009473676,0.00036870773,0.00081680156,0.0004099497,0.0009365821,0.0011211225,0.00030496955,0.00042085315,0.00025940692],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00012234766,0.00012628318,0.0018504044,0.0003374537,0.000049082206,0.0006042828,0.0002605604,0.7772117,0.030074425,0.18429483,0.0018140859,0.0032544765],"study_design_scores_gemma":[0.0000049989626,0.000015941474,0.00024062427,0.000006470545,0.0000063453936,0.000026295207,0.00001803254,0.9942826,0.00078221364,0.004452754,0.00015858418,0.000005124748],"about_ca_topic_score_codex":0.00823581,"about_ca_topic_score_gemma":0.0061556636,"teacher_disagreement_score":0.00823581,"about_ca_system_score_codex":0.0016062227,"about_ca_system_score_gemma":0.0010273218,"threshold_uncertainty_score":0.01637572},"labels":[],"label_agreement":null},{"id":"W1644701606","doi":"10.1109/led.2015.2464713","title":"Wafer-Level Vacuum-Encapsulated Lamé Mode Resonator With f-Q Product of $2.23 \\times 10^{13}$ Hz","year":2015,"lang":"en","type":"article","venue":"IEEE Electron Device Letters","topic":"Advanced MEMS and NEMS Technologies","field":"Engineering","cited_by":34,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McGill University","funders":"Natural Sciences and Engineering Research Council of Canada; McGill University","keywords":"Resonator; Wafer; Microelectromechanical systems; Silicon; Materials science; Optoelectronics; Q factor; Electrical engineering; Engineering","score_opus":0.019712598944749016,"score_gpt":0.23679844261491959,"score_spread":0.21708584367017056,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1644701606","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.975493,0.00081442075,0.020072434,0.00015441421,0.00004414116,0.000028336795,0.00019112596,0.00047407235,0.0027280524],"genre_scores_gemma":[0.9668365,0.00020259469,0.029676154,0.000050263196,0.000014262168,0.000028300537,0.00016294581,0.00008132359,0.0029477186],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9997693,0.000020371017,0.000009310676,0.0000799174,0.00008051025,0.00004055505],"domain_scores_gemma":[0.99973327,0.00007508041,0.00006295071,0.000046197198,0.00005913204,0.000023460436],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00032640807,0.00033113654,0.00040119275,0.00012252903,0.00025486154,0.00030099376,0.00055066514,0.00065933744,0.0014650347],"category_scores_gemma":[0.00041269543,0.00016752747,0.00028815362,0.00013520403,0.00034419447,0.0004226078,0.00025092706,0.00034923677,0.0007279921],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00003771861,0.000013137767,0.0002911403,0.000031092124,0.000011390921,0.00009500562,0.00004247646,0.000093116796,0.9973774,0.00013947673,0.0001302957,0.0017378028],"study_design_scores_gemma":[0.000006426958,0.00020065655,0.0016400188,0.0000017759171,0.000011299483,0.00016814865,0.000020559242,0.0008531816,0.995006,0.000012851201,0.0020683387,0.000010816318],"about_ca_topic_score_codex":0.0006661256,"about_ca_topic_score_gemma":0.0012129131,"teacher_disagreement_score":0.0014650347,"about_ca_system_score_codex":0.00032578473,"about_ca_system_score_gemma":0.00019167642,"threshold_uncertainty_score":0.004900992},"labels":[],"label_agreement":null},{"id":"W1725535125","doi":"10.1109/led.2014.2316316","title":"On the Origin of Anomalous Off–Current Under Hot Carrier Stress in p-Channel DDDMOS Transistors With STI Structure","year":2014,"lang":"en","type":"article","venue":"IEEE Electron Device Letters","topic":"Semiconductor materials and devices","field":"Engineering","cited_by":6,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Toronto","funders":"National Science Council","keywords":"Materials science; Optoelectronics; Shallow trench isolation; Transistor; Electric field; Nitride; Stress (linguistics); Trench; Oxide; Impact ionization; Layer (electronics); Voltage; Electrical engineering; Ionization; Composite material; Chemistry; Physics","score_opus":0.009861675951457602,"score_gpt":0.20992804785700267,"score_spread":0.20006637190554508,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1725535125","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99882096,0.00012774514,0.0006443459,0.000022151555,0.000005952449,0.000002857073,0.000026065987,0.000023875598,0.00032613025],"genre_scores_gemma":[0.9997273,0.000040859875,0.00012816957,0.0000059202866,0.0000036159595,0.0000011204178,0.000018173945,0.0000024612839,0.000072383285],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999517,0.0000045225033,0.0000033243018,0.000009454714,0.000015699125,0.000015171238],"domain_scores_gemma":[0.99983084,0.0000534881,0.00004807549,0.000018063969,0.000031125153,0.000018429615],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000072840514,0.00013368795,0.00014376742,0.00018587291,0.00014576608,0.00020888548,0.00016281805,0.0002102785,0.0005439078],"category_scores_gemma":[0.00021432544,0.00008642825,0.00011932474,0.00014933704,0.00033907237,0.0003758162,0.00015108487,0.0001788664,0.000087468376],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0002890353,0.000032873795,0.008017603,0.00008452256,0.000016620019,0.0011761837,0.00024974233,0.0016379096,0.9823444,0.00050011143,0.000092858645,0.0055582114],"study_design_scores_gemma":[0.00002990864,0.0008960988,0.093684874,0.000024196883,0.00006943265,0.0015996688,0.00043991042,0.04474127,0.8565282,0.0008846789,0.0010776429,0.00002408449],"about_ca_topic_score_codex":0.00035908492,"about_ca_topic_score_gemma":0.0004496559,"teacher_disagreement_score":0.0005439078,"about_ca_system_score_codex":0.00018126905,"about_ca_system_score_gemma":0.000083335195,"threshold_uncertainty_score":0.0018196106},"labels":[],"label_agreement":null},{"id":"W1837378533","doi":"10.1109/led.2014.2321535","title":"On the Response Time of Thin-Film Silicon Lateral Metal-Semiconductor-Metal Photodetectors","year":2014,"lang":"en","type":"article","venue":"IEEE Electron Device Letters","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":3,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Photodetector; Materials science; Silicon; Optoelectronics; Amorphous silicon; Semiconductor; Nanocrystalline material; Layer (electronics); Metal; Wavelength; Nanocrystalline silicon; Optics; Crystalline silicon; Nanotechnology; Metallurgy","score_opus":0.007184183389979371,"score_gpt":0.19549212561077123,"score_spread":0.18830794222079186,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1837378533","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99072635,0.0010031658,0.00586971,0.00009180614,0.000026649677,0.000011852956,0.00015125338,0.00021813558,0.0019009592],"genre_scores_gemma":[0.9967968,0.00027482884,0.0018839812,0.000040946776,0.000010906959,0.000008973291,0.00008750871,0.000020492855,0.0008756331],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9997229,0.000028826711,0.0000112578045,0.000084264764,0.000101492005,0.000051209576],"domain_scores_gemma":[0.99881184,0.0008076024,0.0001251101,0.000052071395,0.00016543965,0.00003801481],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0003337977,0.00027002182,0.00023960599,0.00025558157,0.00016597277,0.00043412205,0.0004321721,0.00056926237,0.0016332344],"category_scores_gemma":[0.0013494304,0.00012549885,0.0001654168,0.00029606972,0.00021021195,0.00047378338,0.00015572898,0.0003585443,0.00048802476],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00049938133,0.000056050092,0.0032389893,0.000120178505,0.000026072077,0.00022034609,0.00010413963,0.0012165708,0.98014027,0.00032538656,0.00017565764,0.013876924],"study_design_scores_gemma":[0.00001123205,0.00028468927,0.0061748135,0.0000125116185,0.000027832408,0.00033717434,0.00005843598,0.015030275,0.97718155,0.00007095254,0.0007980129,0.000012542824],"about_ca_topic_score_codex":0.0007904695,"about_ca_topic_score_gemma":0.00080083415,"teacher_disagreement_score":0.0016332344,"about_ca_system_score_codex":0.0004721887,"about_ca_system_score_gemma":0.00018832729,"threshold_uncertainty_score":0.0054636598},"labels":[],"label_agreement":null},{"id":"W1963551034","doi":"10.1109/led.2014.2358559","title":"Hydrogenated Nanocrystalline Silicon Near Infrared Photodiode Detector","year":2014,"lang":"en","type":"article","venue":"IEEE Electron Device Letters","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":7,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Photodiode; Materials science; Amorphous silicon; Optoelectronics; Silicon; Quantum efficiency; Dark current; Chemical vapor deposition; Nanocrystalline silicon; Infrared; Nanocrystalline material; Plasma-enhanced chemical vapor deposition; Dynamic range; Amorphous solid; Substrate (aquarium); Photodetector; Analytical Chemistry (journal); Optics; Crystalline silicon; Nanotechnology; Physics; Chemistry","score_opus":0.00518930249282693,"score_gpt":0.18578545546319192,"score_spread":0.180596152970365,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1963551034","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.93544203,0.0035459718,0.050965622,0.00026376755,0.0002359334,0.000115100265,0.00088068674,0.00072836864,0.007822565],"genre_scores_gemma":[0.9217897,0.0013098847,0.069599606,0.00011657268,0.000052054595,0.00006419436,0.0005215358,0.000036745714,0.00650968],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99976283,0.000010935303,0.0000096970525,0.00007588716,0.00012076669,0.00001996088],"domain_scores_gemma":[0.99983966,0.000036909172,0.000029771069,0.00002814309,0.000051004212,0.000014398449],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000116391966,0.00018315899,0.00029751594,0.00015023412,0.00015646545,0.00028960506,0.000788249,0.00034905737,0.00076284586],"category_scores_gemma":[0.00017458395,0.00015501902,0.00020742851,0.0002083234,0.00018096199,0.00032043448,0.00021730913,0.0002634349,0.0004177534],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000028053357,0.000007010577,0.00033374826,0.00003870935,0.000010452058,0.0000683982,0.000009849646,0.000104432846,0.99480385,0.00010823235,0.00018119719,0.004306106],"study_design_scores_gemma":[0.000007404169,0.000085653264,0.0015359326,0.000002499552,0.00001693085,0.000249913,0.00001412222,0.0018780354,0.99299777,0.000021693579,0.0031817209,0.0000082523575],"about_ca_topic_score_codex":0.0012922888,"about_ca_topic_score_gemma":0.0032191563,"teacher_disagreement_score":0.0012922888,"about_ca_system_score_codex":0.00064472074,"about_ca_system_score_gemma":0.00026749505,"threshold_uncertainty_score":0.0046777725},"labels":[],"label_agreement":null},{"id":"W1975678448","doi":"10.1109/led.2013.2286902","title":"Multiple Moving Membrane CMUT With Enlarged Membrane Displacement and Low Pull-Down Voltage","year":2013,"lang":"en","type":"article","venue":"IEEE Electron Device Letters","topic":"Ultrasound Imaging and Elastography","field":"Medicine","cited_by":24,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Manitoba","funders":"","keywords":"Capacitive micromachined ultrasonic transducers; Capacitive sensing; Membrane; Capacitance; Analytical Chemistry (journal); Displacement (psychology); Transducer; Ultrasonic sensor; Physics; Materials science; Electrical engineering; Chemistry; Acoustics; Engineering; Chromatography; Electrode; Quantum mechanics","score_opus":0.004338922031463714,"score_gpt":0.20745681394091017,"score_spread":0.20311789190944646,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1975678448","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.90121835,0.0024235356,0.0889623,0.0006374853,0.00046422007,0.00013889979,0.0002575864,0.0011415222,0.004756171],"genre_scores_gemma":[0.87134147,0.0008670926,0.12018002,0.00034386804,0.000084320825,0.00014769101,0.00019111545,0.000099157325,0.0067452383],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9992624,0.000056497043,0.000044777906,0.00019028278,0.00035258863,0.00009347392],"domain_scores_gemma":[0.99943215,0.00016796628,0.000103752966,0.0000844796,0.00012954732,0.000082128434],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00052948605,0.0006478377,0.0005511149,0.00033945192,0.00038373726,0.00067521515,0.0008621427,0.0015781899,0.00146914],"category_scores_gemma":[0.0010001622,0.00047759796,0.00032974477,0.00050612504,0.00070334977,0.001144993,0.001009838,0.00084156357,0.0004887037],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000018811526,0.000004856463,0.000065344466,0.000040647275,0.000002116347,0.00008198714,0.000040108796,0.00005149988,0.9967655,0.0002296844,0.00006265762,0.0026367558],"study_design_scores_gemma":[0.0000060355637,0.00009715792,0.00063498697,0.000005359532,0.0000069273947,0.0002677221,0.00003735761,0.0017404344,0.99480754,0.000036331723,0.0023451373,0.000015071975],"about_ca_topic_score_codex":0.0007218534,"about_ca_topic_score_gemma":0.0015750793,"teacher_disagreement_score":0.0015781899,"about_ca_system_score_codex":0.0005772554,"about_ca_system_score_gemma":0.00049169187,"threshold_uncertainty_score":0.0049147606},"labels":[],"label_agreement":null},{"id":"W1980507638","doi":"10.1109/led.2012.2189932","title":"Fabrication of Sensitivity Tunable Flexible Force Sensor via Spray Coating of Graphite Ink","year":2012,"lang":"en","type":"article","venue":"IEEE Electron Device Letters","topic":"Advanced Sensor and Energy Harvesting Materials","field":"Engineering","cited_by":19,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Simon Fraser University","funders":"","keywords":"Materials science; Fabrication; Resistor; Inkwell; Piezoresistive effect; Layer (electronics); Optoelectronics; Coating; Sensitivity (control systems); Deposition (geology); Graphite; Nanotechnology; Composite material; Electronic engineering; Electrical engineering; Voltage; Engineering","score_opus":0.011661113249496083,"score_gpt":0.2276340616076768,"score_spread":0.2159729483581807,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1980507638","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9432952,0.0014233532,0.05013566,0.00024116864,0.00021962657,0.00011246841,0.00021100564,0.00090984645,0.0034516572],"genre_scores_gemma":[0.93741447,0.00072356255,0.059488844,0.000084483916,0.000025478268,0.000050917795,0.00008490942,0.000028406992,0.0020989056],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99981683,0.00001807035,0.000010520076,0.00004200104,0.00009233019,0.000020227606],"domain_scores_gemma":[0.9997787,0.000062305524,0.00005153088,0.000038198425,0.000043568256,0.00002573645],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00018435146,0.00038506804,0.00030360432,0.00028102216,0.00013448323,0.0002170267,0.0005334081,0.0004496998,0.0006243114],"category_scores_gemma":[0.00037946447,0.00025369858,0.0001760636,0.00022647582,0.00021352303,0.00030173504,0.00028861855,0.0004042074,0.00023255085],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00001072939,0.0000037600141,0.00003816628,0.000018095083,0.0000010282101,0.0000616353,0.0000094034385,0.000041278337,0.99813557,0.000043210133,0.000025617275,0.001611459],"study_design_scores_gemma":[0.000006141435,0.00007047267,0.0007199927,0.0000030373792,0.0000033409453,0.00013870072,0.00000803054,0.0013202806,0.9970784,0.000031096446,0.00061352854,0.0000069225794],"about_ca_topic_score_codex":0.0001947123,"about_ca_topic_score_gemma":0.00054328213,"teacher_disagreement_score":0.0006243114,"about_ca_system_score_codex":0.00015782526,"about_ca_system_score_gemma":0.00015624048,"threshold_uncertainty_score":0.0020884871},"labels":[],"label_agreement":null},{"id":"W1984024737","doi":"10.1109/led.2005.851092","title":"BV/sub CEO/--BV/sub CBO/ separation and sharpness of breakdown in high-speed bipolar transistors","year":2005,"lang":"en","type":"article","venue":"IEEE Electron Device Letters","topic":"Semiconductor Quantum Structures and Devices","field":"Physics and Astronomy","cited_by":4,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Simon Fraser University","funders":"","keywords":"Ionization; Bipolar junction transistor; Impact ionization; Common emitter; Materials science; Analytical Chemistry (journal); Optoelectronics; Atomic physics; Transistor; Chemistry; Voltage; Electrical engineering; Physics; Ion","score_opus":0.006633052945138619,"score_gpt":0.24065623686306978,"score_spread":0.23402318391793117,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1984024737","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99644285,0.0008592987,0.0020470903,0.000017073515,0.000004156935,0.0000059452973,0.000025255118,0.000038559177,0.0005598161],"genre_scores_gemma":[0.9988476,0.00018519821,0.00064001104,0.000005872478,0.0000029407997,0.0000029764128,0.000028175611,0.0000060403936,0.0002811086],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99991834,0.000007721505,0.0000032168566,0.00001720998,0.000036361434,0.000017148954],"domain_scores_gemma":[0.99974376,0.00009115965,0.00008878058,0.000011541943,0.000029507584,0.000035196088],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00010997625,0.00022691417,0.00014641215,0.00022729594,0.00017851319,0.00039002264,0.00023018979,0.00025573027,0.00052612665],"category_scores_gemma":[0.00048886775,0.00015724302,0.0001263067,0.00015194766,0.0002248683,0.00032190516,0.00015980052,0.00029970432,0.00015468016],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00015488191,0.000028218657,0.0023337123,0.000050410225,0.000010269734,0.00008931656,0.000050839575,0.0009506855,0.9915025,0.00012549957,0.000031799485,0.004671882],"study_design_scores_gemma":[0.000017918539,0.00065332046,0.037330847,0.000010584397,0.000025751859,0.0005723956,0.000071596354,0.00603641,0.9542754,0.0003482368,0.0006479183,0.000009472811],"about_ca_topic_score_codex":0.0004066076,"about_ca_topic_score_gemma":0.0006913827,"teacher_disagreement_score":0.00052612665,"about_ca_system_score_codex":0.00032037037,"about_ca_system_score_gemma":0.00014685468,"threshold_uncertainty_score":0.0023245215},"labels":[],"label_agreement":null},{"id":"W2010780476","doi":"10.1109/55.936343","title":"300 GHz InP/GaAsSb/InP double HBTs with high current capability and BV/sub CEO/&gt;6 V","year":2001,"lang":"en","type":"article","venue":"IEEE Electron Device Letters","topic":"Radio Frequency Integrated Circuit Design","field":"Engineering","cited_by":170,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Simon Fraser University","funders":"","keywords":"Materials science; Optoelectronics; Heterojunction; Bipolar junction transistor; Indium phosphide; Gallium arsenide; Metalorganic vapour phase epitaxy; Conduction band; Heterojunction bipolar transistor; Saturation (graph theory); Voltage; Electrical engineering; Transistor; Epitaxy; Electron; Physics; Nanotechnology","score_opus":0.010490475630971415,"score_gpt":0.21142476733312018,"score_spread":0.20093429170214877,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2010780476","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9948901,0.00046777516,0.0019530319,0.00003963022,0.000012186525,0.000008344462,0.00014912352,0.00013905329,0.0023406495],"genre_scores_gemma":[0.994565,0.0003268799,0.0032470443,0.000012719506,0.000008956137,0.000008079707,0.00019204078,0.000019794446,0.0016194892],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99994373,0.000003689849,0.0000020029895,0.000012201652,0.000024667015,0.000013709047],"domain_scores_gemma":[0.99994004,0.000009574906,0.000013137162,0.000006715772,0.000016791631,0.000013758283],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000042573552,0.00018248367,0.00018234365,0.00015003656,0.00022122606,0.00025255317,0.00025201606,0.0001631861,0.0011782848],"category_scores_gemma":[0.00010729072,0.00011661615,0.00006819579,0.00021868052,0.00012496303,0.00025656013,0.0001661164,0.00014608318,0.00027009958],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00006610889,0.000015452708,0.0010640987,0.000055262546,0.0000100191255,0.00019899746,0.000064835855,0.00020684607,0.98948914,0.0001526462,0.00031895007,0.00835766],"study_design_scores_gemma":[0.000023326636,0.00031127463,0.018080823,0.000009672095,0.000050600593,0.001316675,0.0001146208,0.003405287,0.9680554,0.00025947424,0.0083608795,0.000011904415],"about_ca_topic_score_codex":0.00097050617,"about_ca_topic_score_gemma":0.0037227606,"teacher_disagreement_score":0.0011782848,"about_ca_system_score_codex":0.00019442105,"about_ca_system_score_gemma":0.00008435943,"threshold_uncertainty_score":0.0039417744},"labels":[],"label_agreement":null},{"id":"W2012728322","doi":"10.1109/led.2014.2379213","title":"Electrothermal Mapping of AlGaN/GaN HEMTs Using Microresistance Thermometer Detectors","year":2014,"lang":"en","type":"article","venue":"IEEE Electron Device Letters","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":22,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Université de Sherbrooke","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"High-electron-mobility transistor; Sapphire; Thermometer; Materials science; Transistor; Optoelectronics; Analytical Chemistry (journal); Physics; Electrical engineering; Chemistry; Engineering; Thermodynamics","score_opus":0.013080710440212346,"score_gpt":0.2330614736095191,"score_spread":0.21998076316930676,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2012728322","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.94343513,0.00073235604,0.051098485,0.00011578382,0.00006492271,0.000038158625,0.00032127163,0.0006891997,0.0035047196],"genre_scores_gemma":[0.9632889,0.00033664366,0.034319304,0.00003838508,0.000015489759,0.000028758419,0.00007217053,0.000040151786,0.0018601818],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99979013,0.000022945942,0.000008705411,0.00007030913,0.000084377956,0.000023544859],"domain_scores_gemma":[0.99980634,0.00005604287,0.00004348358,0.000029726927,0.00005317841,0.000011206115],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00020518231,0.00029645584,0.00020224684,0.00028948608,0.000105666,0.00029084302,0.00042239233,0.0002101935,0.0006208082],"category_scores_gemma":[0.00027013847,0.00018481734,0.00017861484,0.00017983122,0.00021033867,0.00036323187,0.00019073876,0.00024136303,0.00019401437],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000026499918,0.000006268278,0.00043470287,0.00002036574,0.0000044974713,0.000032600557,0.00003406105,0.0002531235,0.99553853,0.0001372939,0.000068758505,0.0034433624],"study_design_scores_gemma":[0.0000048484503,0.00005530526,0.0028149062,0.0000031772786,0.0000086878,0.00012160967,0.000030380597,0.008467427,0.9876452,0.000047849113,0.0007909449,0.000009729938],"about_ca_topic_score_codex":0.00082805473,"about_ca_topic_score_gemma":0.0013556675,"teacher_disagreement_score":0.00082805473,"about_ca_system_score_codex":0.0005179659,"about_ca_system_score_gemma":0.00018912555,"threshold_uncertainty_score":0.0037581325},"labels":[],"label_agreement":null},{"id":"W2018962921","doi":"10.1109/led.2012.2217391","title":"Silicon Solar Cell With Integrated Tunnel Junction for Multijunction Photovoltaic Applications","year":2012,"lang":"en","type":"article","venue":"IEEE Electron Device Letters","topic":"solar cell performance optimization","field":"Engineering","cited_by":14,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McMaster University","funders":"","keywords":"Solar cell; Materials science; Photovoltaic system; Optoelectronics; Silicon; Thermal; Crystalline silicon; Quantum dot solar cell; Solar cell efficiency; Polymer solar cell; Electrical engineering; Engineering; Physics","score_opus":0.006624701161952654,"score_gpt":0.19390216991315193,"score_spread":0.18727746875119927,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2018962921","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9503428,0.0030345938,0.03915891,0.0001526698,0.00012982039,0.0000534399,0.0004187258,0.00026327555,0.0064458614],"genre_scores_gemma":[0.96044004,0.00092368963,0.035507686,0.000043696407,0.00003503856,0.000027251206,0.00035949767,0.000020738013,0.002642361],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999248,0.000003074353,0.0000047874864,0.000016144444,0.000039167393,0.000012031425],"domain_scores_gemma":[0.9999528,0.0000035410578,0.000008637901,0.000006017324,0.0000205556,0.000008584504],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00006554509,0.0002033463,0.00042164983,0.00015514722,0.00023383777,0.0003230485,0.00050208013,0.00038494106,0.00090864947],"category_scores_gemma":[0.00008723556,0.00016017884,0.0002826284,0.00031645468,0.00007287018,0.00032892183,0.0002243107,0.0003120819,0.0002933362],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000030675412,0.000021003552,0.00028138162,0.000072856565,0.000013588512,0.0000804717,0.000009691149,0.001558737,0.9932554,0.00042209416,0.00017738531,0.004076696],"study_design_scores_gemma":[0.00006487167,0.0010759733,0.0062706526,0.000021740729,0.00013162289,0.001799481,0.00004349508,0.046899445,0.9316984,0.00038563935,0.01157104,0.000037756185],"about_ca_topic_score_codex":0.00042888022,"about_ca_topic_score_gemma":0.0017174663,"teacher_disagreement_score":0.00090864947,"about_ca_system_score_codex":0.00026257808,"about_ca_system_score_gemma":0.00026527254,"threshold_uncertainty_score":0.0030397177},"labels":[],"label_agreement":null},{"id":"W2018984614","doi":"10.1109/led.2013.2290532","title":"Unified Analytic Model for Current–Voltage Behavior in Amorphous Oxide Semiconductor TFTs","year":2014,"lang":"en","type":"article","venue":"IEEE Electron Device Letters","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":29,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"IGNIS Innovation (Canada)","funders":"Engineering and Physical Sciences Research Council","keywords":"Thin-film transistor; Amorphous solid; Materials science; Threshold voltage; Transistor; Amorphous semiconductors; Semiconductor; Optoelectronics; Voltage; Oxide thin-film transistor; Current (fluid); Electronic engineering; Electrical engineering; Silicon; Nanotechnology; Engineering; Layer (electronics); Chemistry; Crystallography","score_opus":0.01882215122080201,"score_gpt":0.24299467060773972,"score_spread":0.22417251938693772,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2018984614","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.0636511,0.001188906,0.91550356,0.00031695442,0.000078954145,0.00010618142,0.00048967556,0.0009172193,0.01774743],"genre_scores_gemma":[0.92400324,0.001683754,0.06023393,0.00022644631,0.00012193851,0.00033284718,0.00042355878,0.00026575997,0.012708503],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9997819,0.000031494834,0.000011938504,0.000033387085,0.00010774606,0.000033552777],"domain_scores_gemma":[0.99978393,0.00006518535,0.000029477887,0.000046463058,0.00006503694,0.000009869883],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00028999627,0.00070835045,0.000730994,0.0009256124,0.00039707814,0.00091282325,0.0017420556,0.0011441823,0.001842883],"category_scores_gemma":[0.0013354835,0.00032040273,0.00083856017,0.000645425,0.0005721661,0.0016509757,0.00038854827,0.0006217853,0.0009005895],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00004924102,0.00006591899,0.0006236643,0.00014270966,0.0000432558,0.0005289418,0.0003144603,0.7432176,0.052203152,0.18723665,0.0018246594,0.0137497345],"study_design_scores_gemma":[0.0000034579944,0.0000137818115,0.00008997417,0.000008510135,0.0000053577114,0.000066660155,0.00001099891,0.98915756,0.00088121236,0.008923058,0.0008330418,0.000006350231],"about_ca_topic_score_codex":0.0029064876,"about_ca_topic_score_gemma":0.002321703,"teacher_disagreement_score":0.0029064876,"about_ca_system_score_codex":0.0009913009,"about_ca_system_score_gemma":0.00076859206,"threshold_uncertainty_score":0.007192433},"labels":[],"label_agreement":null},{"id":"W2048072802","doi":"10.1109/led.2014.2385701","title":"Highly Sensitive Pressure Sensor Array With Photothermally Reduced Graphene Oxide","year":2014,"lang":"en","type":"article","venue":"IEEE Electron Device Letters","topic":"Advanced Sensor and Energy Harvesting Materials","field":"Engineering","cited_by":32,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Simon Fraser University","funders":"","keywords":"Graphene; Materials science; Oxide; Optoelectronics; Electrical conductor; Pressure sensor; Layer (electronics); Sensor array; Thin film; Electrical resistivity and conductivity; Conductivity; Sensitivity (control systems); Nanotechnology; Composite material; Electrical engineering; Electronic engineering; Computer science; Chemistry; Mechanical engineering; Engineering","score_opus":0.005272523130577426,"score_gpt":0.19169056184748973,"score_spread":0.1864180387169123,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2048072802","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9030134,0.00335505,0.08356724,0.00092445884,0.0004980803,0.000130565,0.00080942846,0.0021342668,0.00556756],"genre_scores_gemma":[0.87968373,0.0011377942,0.113391854,0.00045944485,0.00013463195,0.000115982984,0.00037609178,0.000059097583,0.0046412735],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9995652,0.00003270751,0.000015059056,0.00015012677,0.00018783877,0.000049213708],"domain_scores_gemma":[0.999838,0.00003267282,0.00004790901,0.000017030106,0.000040067014,0.000024325547],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00014207498,0.0004929876,0.00043995932,0.00032546718,0.00019688837,0.00035708668,0.0011465991,0.00094489177,0.0006719121],"category_scores_gemma":[0.00024826938,0.00036266318,0.0002573831,0.0003327524,0.00030615288,0.0006347335,0.00043680257,0.00055323483,0.00045430055],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000014767952,0.000011680106,0.0000507838,0.000024442741,0.00000514665,0.00003967698,0.000009765648,0.00007632805,0.997841,0.000041021896,0.00010522066,0.0017801495],"study_design_scores_gemma":[0.000004724584,0.00009901954,0.00045077267,0.0000017416796,0.000012941084,0.00008189772,0.000008412769,0.0017364647,0.99647444,0.000022437172,0.0010942903,0.000012771983],"about_ca_topic_score_codex":0.00033635553,"about_ca_topic_score_gemma":0.00073847704,"teacher_disagreement_score":0.0011465991,"about_ca_system_score_codex":0.00027873536,"about_ca_system_score_gemma":0.00012485858,"threshold_uncertainty_score":0.0022478104},"labels":[],"label_agreement":null},{"id":"W2074394669","doi":"10.1109/led.2004.841861","title":"Three-dimensional metal gate-high-/spl kappa/-GOI CMOSFETs on 1-poly-6-metal 0.18-/spl mu/m Si devices","year":2005,"lang":"en","type":"article","venue":"IEEE Electron Device Letters","topic":"Semiconductor materials and devices","field":"Engineering","cited_by":28,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"National Research Council Canada","funders":"","keywords":"CMOS; Physics; Metal; Materials science; Electrical engineering; Optoelectronics; Engineering","score_opus":0.012425423688057885,"score_gpt":0.22366691290810836,"score_spread":0.21124148922005048,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2074394669","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9932192,0.00012789444,0.0016013302,0.00011005188,0.000044752094,0.000010969388,0.00022309335,0.00021890395,0.004443846],"genre_scores_gemma":[0.99330443,0.00012291913,0.0047812266,0.000034607867,0.000010756779,0.000013283294,0.00012288558,0.000028651937,0.001581283],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99996364,0.0000016027689,0.0000012294975,0.000010258782,0.000012914986,0.000010452074],"domain_scores_gemma":[0.9999529,0.000008593311,0.000013252042,0.000007951599,0.0000072457888,0.000010081006],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000027929722,0.00018051462,0.00016882828,0.00007876409,0.00021648317,0.00025921804,0.00035440677,0.00024698267,0.0015001027],"category_scores_gemma":[0.00007442623,0.000108344735,0.00017522335,0.000119171455,0.00023260497,0.00021745483,0.00018316772,0.0001833769,0.0003395367],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00006788716,0.00002730698,0.00058207824,0.000053993263,0.000011056611,0.00045488638,0.00012940433,0.0015075443,0.9935278,0.0010392364,0.0005441751,0.0020546506],"study_design_scores_gemma":[0.000052127798,0.00035329926,0.0100363465,0.000017650027,0.000031073632,0.00049700006,0.00016189649,0.01661481,0.96553326,0.0006323168,0.006035054,0.00003508741],"about_ca_topic_score_codex":0.0014410287,"about_ca_topic_score_gemma":0.0046104016,"teacher_disagreement_score":0.0015001027,"about_ca_system_score_codex":0.00028980421,"about_ca_system_score_gemma":0.00013480367,"threshold_uncertainty_score":0.0050183535},"labels":[],"label_agreement":null},{"id":"W2075371655","doi":"10.1109/led.2005.853670","title":"Top-gate TFTs using 13.56 MHz PECVD microcrystalline silicon","year":2005,"lang":"en","type":"article","venue":"IEEE Electron Device Letters","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":28,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Thin-film transistor; Materials science; Plasma-enhanced chemical vapor deposition; Silicon nitride; Optoelectronics; Gate dielectric; Threshold voltage; Silicon; Subthreshold slope; Amorphous silicon; Microcrystalline; Amorphous solid; Dielectric; Chemical vapor deposition; Transistor; Analytical Chemistry (journal); Layer (electronics); Electrical engineering; Nanotechnology; Voltage; Crystalline silicon; Crystallography; Chemistry","score_opus":0.009683283070678382,"score_gpt":0.2171916700592174,"score_spread":0.20750838698853902,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2075371655","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.93292254,0.0024639687,0.047203783,0.00018448044,0.00016046719,0.00011737646,0.0026086844,0.0013351643,0.013003584],"genre_scores_gemma":[0.9527375,0.0013996514,0.03524521,0.00012092272,0.000038352035,0.00007425872,0.0016658064,0.00015203051,0.008566193],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999167,0.000002606318,0.0000044491935,0.000028339991,0.000029994004,0.000017928967],"domain_scores_gemma":[0.9998957,0.000030595125,0.000015431995,0.000013190233,0.00003337758,0.000011751411],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00006746931,0.00030673514,0.00024162712,0.00012376826,0.00014599782,0.00023665218,0.0003758787,0.00025371672,0.0018498166],"category_scores_gemma":[0.0002110786,0.00016571139,0.00016959776,0.00023348887,0.00014904242,0.00023650602,0.0001251882,0.00024137383,0.0007995943],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000029384908,0.0000038649923,0.000175019,0.000030725183,0.000005303919,0.000052665826,0.000013859574,0.000108719134,0.9959292,0.00005670196,0.00022936084,0.0033650596],"study_design_scores_gemma":[0.00000536062,0.000044612083,0.0014017922,0.00000285396,0.0000142221415,0.00019942275,0.000008847554,0.0010259021,0.9934629,0.000027561638,0.0038029314,0.000003654534],"about_ca_topic_score_codex":0.0029264605,"about_ca_topic_score_gemma":0.0056344797,"teacher_disagreement_score":0.0029264605,"about_ca_system_score_codex":0.00053160946,"about_ca_system_score_gemma":0.0002304632,"threshold_uncertainty_score":0.0061882734},"labels":[],"label_agreement":null},{"id":"W2077087281","doi":"10.1109/led.2013.2245626","title":"A Stretchable RF Antenna With Silver Nanowires","year":2013,"lang":"en","type":"article","venue":"IEEE Electron Device Letters","topic":"Advanced Sensor and Energy Harvesting Materials","field":"Engineering","cited_by":118,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Simon Fraser University","funders":"","keywords":"Materials science; Antenna (radio); Patch antenna; Optoelectronics; Microstrip antenna; Radio frequency; Polydimethylsiloxane; Electrical conductor; Microstrip; Transmission line; Nanowire; Electrical engineering; Nanotechnology; Composite material; Engineering","score_opus":0.006478109330318951,"score_gpt":0.19158483267698262,"score_spread":0.18510672334666367,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2077087281","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9277146,0.0014258868,0.0584501,0.00059785915,0.00038171286,0.0000447735,0.00023241603,0.0016689291,0.009483561],"genre_scores_gemma":[0.961384,0.00043496443,0.02935178,0.0001701806,0.000064885295,0.000030458204,0.00014533098,0.00008757323,0.008330783],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999001,0.0000065101253,0.000006227492,0.000034561745,0.00003270216,0.00001999834],"domain_scores_gemma":[0.99992156,0.000011004564,0.000023050296,0.00001668902,0.000012133684,0.000015565287],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000067200206,0.00032781457,0.00023581294,0.00013952945,0.00011573445,0.00024926936,0.00048609273,0.00051520404,0.000696355],"category_scores_gemma":[0.00012667674,0.00018702545,0.0002802556,0.00014166211,0.00013053944,0.00025647893,0.00025057062,0.00027831685,0.00066155114],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000019893054,0.000008045143,0.00006441306,0.000023517845,0.0000037510529,0.00010094524,0.000009649587,0.00025742114,0.9957235,0.000083363775,0.00016596854,0.0035394344],"study_design_scores_gemma":[0.00001891485,0.00024320236,0.001274865,0.0000060513294,0.000017862954,0.00040464188,0.000010226242,0.005602782,0.9875503,0.000072755945,0.0047819633,0.000016355069],"about_ca_topic_score_codex":0.00023835868,"about_ca_topic_score_gemma":0.00029515376,"teacher_disagreement_score":0.000696355,"about_ca_system_score_codex":0.00021629561,"about_ca_system_score_gemma":0.00006343774,"threshold_uncertainty_score":0.002329588},"labels":[],"label_agreement":null},{"id":"W2080005809","doi":"10.1109/led.2013.2295976","title":"Low Dark Current Amorphous Silicon Metal-Semiconductor-Metal Photodetector for Digital Imaging Applications","year":2014,"lang":"en","type":"article","venue":"IEEE Electron Device Letters","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":29,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Photodetector; Dark current; Photodiode; Optoelectronics; Materials science; Silicon; Amorphous silicon; Organic semiconductor; Quantum efficiency; Semiconductor; Crystalline silicon","score_opus":0.006868577498681653,"score_gpt":0.21506654099875686,"score_spread":0.2081979635000752,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2080005809","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.74890536,0.005341728,0.212591,0.00074930314,0.00017962235,0.00013693582,0.0012013824,0.0039949613,0.026899658],"genre_scores_gemma":[0.9040174,0.0009448173,0.0861164,0.00027667172,0.000053235533,0.00004760053,0.00029996995,0.000048408216,0.008195528],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99990046,0.000011703041,0.0000053998606,0.000025687497,0.000044548087,0.000012168448],"domain_scores_gemma":[0.9998896,0.000031208725,0.00002160211,0.000012244856,0.000032020984,0.000013265908],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00012761976,0.00020753611,0.00018674195,0.00019854621,0.00021535004,0.00043954892,0.0006550405,0.00036783263,0.0021168937],"category_scores_gemma":[0.00017363022,0.000115642004,0.00014453869,0.00034680546,0.00014053639,0.00037878501,0.00025964744,0.00023889609,0.00092929637],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00008418224,0.000039762675,0.0008829815,0.00010192232,0.000015536783,0.00010984881,0.000020311381,0.0002527389,0.9741668,0.0018117606,0.001218983,0.021295106],"study_design_scores_gemma":[0.000021875247,0.00034488767,0.0024588788,0.0000182227,0.000039446742,0.0007585015,0.000030359855,0.0150089525,0.96859866,0.00044353367,0.012261655,0.000015024532],"about_ca_topic_score_codex":0.00024640618,"about_ca_topic_score_gemma":0.0011860721,"teacher_disagreement_score":0.0021168937,"about_ca_system_score_codex":0.00024051787,"about_ca_system_score_gemma":0.00026731202,"threshold_uncertainty_score":0.0070816875},"labels":[],"label_agreement":null},{"id":"W2094258590","doi":"10.1109/led.2015.2424919","title":"Design and Characterization of a Capacitive Micromachined Transducer With a Deflectable Bottom Electrode","year":2015,"lang":"en","type":"article","venue":"IEEE Electron Device Letters","topic":"Advanced Sensor and Energy Harvesting Materials","field":"Engineering","cited_by":20,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Manitoba","funders":"Natural Sciences and Engineering Research Council of Canada; CMC Microsystems","keywords":"Capacitive micromachined ultrasonic transducers; Transducer; Capacitive sensing; Electrode; Surface micromachining; Ultrasonic sensor; Materials science; Acoustics; Displacement (psychology); Amplitude; Electrical engineering; Optoelectronics; Optics; Fabrication; Physics; Engineering","score_opus":0.013674439006291245,"score_gpt":0.2091761280261016,"score_spread":0.19550168901981035,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2094258590","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.5921386,0.0029706806,0.3967833,0.00089770794,0.00064895005,0.00064364326,0.0008346757,0.0011083486,0.003974175],"genre_scores_gemma":[0.58941567,0.00075236644,0.40550557,0.00021141184,0.00009583202,0.00033175547,0.00036623012,0.000046589048,0.0032746526],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9993266,0.0000372455,0.00004584439,0.00020637187,0.00033436247,0.000049505354],"domain_scores_gemma":[0.99938464,0.000118675314,0.0001387664,0.00007450496,0.00021833663,0.00006504024],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00045871566,0.00056869513,0.00054223277,0.00043467362,0.00022370944,0.00060341053,0.001628183,0.0013084486,0.0006042349],"category_scores_gemma":[0.0008698824,0.0005589515,0.000310033,0.0004917779,0.00038546984,0.0008369699,0.00032428032,0.0005973576,0.00040193636],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000013429047,0.000009297372,0.00011677104,0.000045181787,0.0000047183435,0.000043669246,0.000016940634,0.00019926376,0.9966911,0.00017792828,0.000058786092,0.0026228237],"study_design_scores_gemma":[0.000012607965,0.0002424116,0.0014182305,0.000005861739,0.00001946921,0.00029443912,0.000021792028,0.009465385,0.9853339,0.000045213037,0.0031199837,0.00002077723],"about_ca_topic_score_codex":0.0009370235,"about_ca_topic_score_gemma":0.0017132269,"teacher_disagreement_score":0.001628183,"about_ca_system_score_codex":0.00071258796,"about_ca_system_score_gemma":0.00082627067,"threshold_uncertainty_score":0.005170226},"labels":[],"label_agreement":null},{"id":"W2098127449","doi":"10.1109/led.2009.2021493","title":"Room Temperature Single-Electron Transistor Featuring Gate-Enhanced on -State Current","year":2009,"lang":"en","type":"article","venue":"IEEE Electron Device Letters","topic":"Quantum and electron transport phenomena","field":"Physics and Astronomy","cited_by":35,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Université de Sherbrooke","funders":"","keywords":"Coulomb blockade; Transistor; Materials science; Fabrication; Optoelectronics; Electronic circuit; Nanowire; Electrical engineering; Current (fluid); Logic gate; Oxidizing agent; Voltage; Chemistry; Engineering","score_opus":0.008023894465490988,"score_gpt":0.22964538745341093,"score_spread":0.22162149298791994,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2098127449","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99007213,0.00030590477,0.006677797,0.00012146729,0.000060805363,0.000017029242,0.000121586556,0.00017367241,0.0024495695],"genre_scores_gemma":[0.9931196,0.00012792126,0.005275441,0.000019873662,0.000012440332,0.000011844356,0.00008118244,0.000021009935,0.0013306699],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999274,0.0000037423692,0.0000036565907,0.000019604275,0.000026820844,0.000018691728],"domain_scores_gemma":[0.99991786,0.000017623088,0.0000144378155,0.000011840047,0.000017822136,0.00002034333],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0000699469,0.00019200916,0.00031243527,0.00010329363,0.00011749324,0.00027460753,0.000390865,0.00031066203,0.00060339476],"category_scores_gemma":[0.00013490938,0.00010950963,0.00016186034,0.00011406821,0.00021151658,0.00026554987,0.00015157418,0.00032731085,0.0003161875],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000017341426,0.000008276995,0.00006028436,0.000018525105,0.000002618431,0.00006449152,0.000012344252,0.00014154827,0.9986463,0.00028848514,0.00004227469,0.0006974939],"study_design_scores_gemma":[0.000014046242,0.00017255527,0.00089221983,0.0000023729315,0.000013049817,0.0002363304,0.000010503728,0.0063652378,0.9908007,0.00015557524,0.0013278469,0.000009599555],"about_ca_topic_score_codex":0.00025661566,"about_ca_topic_score_gemma":0.0007389879,"teacher_disagreement_score":0.00060339476,"about_ca_system_score_codex":0.00021371694,"about_ca_system_score_gemma":0.00014592559,"threshold_uncertainty_score":0.002018571},"labels":[],"label_agreement":null},{"id":"W2102146483","doi":"10.1109/led.2011.2104937","title":"A Study of Parasitic Series Resistance Components in In–Ga–Zn–Oxide (a-IGZO) Thin-Film Transistors","year":2011,"lang":"en","type":"article","venue":"IEEE Electron Device Letters","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":18,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"IGNIS Innovation (Canada)","funders":"","keywords":"Thin-film transistor; Channel (broadcasting); Equivalent series resistance; Parasitic element; Materials science; Optoelectronics; Transistor; Electrode; Oxide; Series (stratigraphy); Channel length modulation; Electrical engineering; Electronic engineering; MOSFET; Nanotechnology; Layer (electronics); Voltage; Engineering; Chemistry; Metallurgy","score_opus":0.024616426803594924,"score_gpt":0.21594380537282334,"score_spread":0.19132737856922843,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2102146483","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9803288,0.00042480504,0.017350866,0.00002590848,0.000010009588,0.000023771014,0.00010759782,0.00014886881,0.0015792834],"genre_scores_gemma":[0.9959252,0.00018852693,0.0034641977,0.000004725273,0.000006101554,0.0000072819767,0.00006364857,0.000017162536,0.00032316413],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99991167,0.000013676577,0.0000047826597,0.000025565516,0.000031863405,0.000012546119],"domain_scores_gemma":[0.9997421,0.00013795898,0.000041408817,0.000027546574,0.000042506254,0.000008497733],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00016672366,0.0002765352,0.0001672024,0.0003183393,0.0001414313,0.00016852624,0.00034393682,0.00019288882,0.00032996017],"category_scores_gemma":[0.0006887869,0.00015005474,0.0002446185,0.00035433297,0.00019652188,0.00032464377,0.00006171195,0.00016363345,0.00005892853],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00010278835,0.000052241092,0.006856126,0.0002436482,0.00007051179,0.0006593736,0.00025890546,0.01914702,0.9589404,0.0015650261,0.00015469301,0.011949294],"study_design_scores_gemma":[0.000026404423,0.00046618446,0.060100187,0.000039689516,0.00018275519,0.00092107774,0.00016280229,0.30236408,0.6315979,0.0010057789,0.0030809226,0.0000521886],"about_ca_topic_score_codex":0.0017151372,"about_ca_topic_score_gemma":0.0026268635,"teacher_disagreement_score":0.0017151372,"about_ca_system_score_codex":0.00023327438,"about_ca_system_score_gemma":0.00016605415,"threshold_uncertainty_score":0.0034102798},"labels":[],"label_agreement":null},{"id":"W2102238091","doi":"10.1109/led.2004.838553","title":"Extraction of the Average Collector Velocity in High-Speed “Type-II” InP–GaAsSb–InP DHBTs","year":2004,"lang":"en","type":"article","venue":"IEEE Electron Device Letters","topic":"Semiconductor Quantum Structures and Devices","field":"Physics and Astronomy","cited_by":27,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Simon Fraser University","funders":"","keywords":"Heterojunction; Indium phosphide; Gallium arsenide; Materials science; Drift velocity; Optoelectronics; Bipolar junction transistor; Conduction band; Heterojunction bipolar transistor; Electron; Electric field; Indium gallium arsenide; Analytical Chemistry (journal); Electrical engineering; Transistor; Voltage; Physics; Chemistry","score_opus":0.00949093355368115,"score_gpt":0.24684957087632461,"score_spread":0.23735863732264345,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2102238091","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.97708523,0.00037121246,0.01964717,0.000030892654,0.000013709251,0.000014730437,0.00031835274,0.00033126312,0.0021873473],"genre_scores_gemma":[0.9944528,0.00015948087,0.004449383,0.0000060041434,0.0000033778977,0.0000057632296,0.00015691017,0.000024970735,0.0007413442],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99995565,0.0000049982327,0.000001755527,0.000013950288,0.000015086994,0.0000084335325],"domain_scores_gemma":[0.9998211,0.00007791419,0.00003117012,0.000013507342,0.00004116108,0.000015133783],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00009264649,0.00022762945,0.00012263798,0.00052069617,0.00016680604,0.00029677624,0.00020301637,0.00024360162,0.00078004703],"category_scores_gemma":[0.000523483,0.00015547185,0.00011618826,0.0003970272,0.000111030815,0.00025455872,0.000084595864,0.00022039571,0.00020680644],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00021360966,0.000033239558,0.01139282,0.00011916242,0.000025056674,0.000120191195,0.00013108416,0.0061605186,0.9562834,0.000705109,0.00018544716,0.024630291],"study_design_scores_gemma":[0.0000109074535,0.00017157797,0.062350072,0.000023651297,0.000025976662,0.00024015014,0.000102049686,0.049903538,0.88513124,0.00034852064,0.0016730697,0.000019407773],"about_ca_topic_score_codex":0.0024643054,"about_ca_topic_score_gemma":0.0030544256,"teacher_disagreement_score":0.0024643054,"about_ca_system_score_codex":0.0003217094,"about_ca_system_score_gemma":0.00017022896,"threshold_uncertainty_score":0.004899919},"labels":[],"label_agreement":null},{"id":"W2105888720","doi":"10.1109/55.954914","title":"Readout circuit in active pixel sensors in amorphous silicon technology","year":2001,"lang":"en","type":"article","venue":"IEEE Electron Device Letters","topic":"CCD and CMOS Imaging Sensors","field":"Engineering","cited_by":49,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Amplifier; Noise (video); Pixel; Linearity; Detector; Fixed-pattern noise; Optoelectronics; Materials science; Electrical engineering; Charge amplifier; Silicon; SIGNAL (programming language); Reading (process); Electronic engineering; CMOS; Physics; Computer science; Engineering; Optics; Operational amplifier; Artificial intelligence","score_opus":0.007513339564672573,"score_gpt":0.21174284809901575,"score_spread":0.20422950853434318,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2105888720","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.26277232,0.007723978,0.64767104,0.0009914592,0.00077988504,0.00039394523,0.0006788106,0.006189214,0.07279934],"genre_scores_gemma":[0.7834527,0.0023379682,0.18234062,0.00092326605,0.00033088174,0.00014313051,0.0004578827,0.00017653995,0.02983703],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99976295,0.000023149574,0.000011714327,0.00006130579,0.00012382292,0.000017063749],"domain_scores_gemma":[0.99983597,0.0000621296,0.000022655704,0.00002593786,0.000043235268,0.000010008981],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00019555868,0.0002792892,0.00018564054,0.00023368176,0.00025791026,0.00082911504,0.00088282465,0.00065423973,0.0036472448],"category_scores_gemma":[0.0004088793,0.0002041426,0.00016605035,0.00027141612,0.00032518865,0.0008921101,0.00024171238,0.0004252102,0.0013527618],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00013989731,0.00010092178,0.0011032925,0.00031780792,0.000022093127,0.00037133228,0.00016843741,0.0014626166,0.86702186,0.02625383,0.002194653,0.100843206],"study_design_scores_gemma":[0.000051676296,0.0010050137,0.0031406966,0.000070670525,0.00006874739,0.0020847924,0.0000903788,0.021119732,0.8914461,0.007617125,0.07326798,0.00003698711],"about_ca_topic_score_codex":0.00024400889,"about_ca_topic_score_gemma":0.00022977077,"teacher_disagreement_score":0.0036472448,"about_ca_system_score_codex":0.00031929428,"about_ca_system_score_gemma":0.00017867837,"threshold_uncertainty_score":0.01220125},"labels":[],"label_agreement":null},{"id":"W2117316251","doi":"10.1109/led.2011.2142412","title":"On the Origin of Gate-Induced Floating-Body Effect in PD SOI p-MOSFETs","year":2011,"lang":"en","type":"article","venue":"IEEE Electron Device Letters","topic":"Semiconductor materials and devices","field":"Engineering","cited_by":19,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of British Columbia","funders":"","keywords":"Quantum tunnelling; Silicon on insulator; Electron; MOSFET; Silicon; Negative-bias temperature instability; Materials science; Optoelectronics; Anode; Gate oxide; Condensed matter physics; Oxide; Electrical engineering; Chemistry; Physics; Voltage; Transistor; Engineering; Physical chemistry","score_opus":0.020908262688045683,"score_gpt":0.23312094396616903,"score_spread":0.21221268127812334,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2117316251","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9926077,0.0008917032,0.004610249,0.000038161535,0.0000139247995,0.000009023888,0.000022964856,0.000037584054,0.001768701],"genre_scores_gemma":[0.9989641,0.00025455753,0.00059445365,0.000007672543,0.0000046813775,0.0000022339937,0.000011947227,0.0000050549065,0.00015535967],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999443,0.0000075804323,0.0000021162055,0.000011136267,0.00002156546,0.000013236468],"domain_scores_gemma":[0.9998006,0.000114905466,0.000027882379,0.000018073262,0.000030065008,0.00000847421],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000114612805,0.00023710704,0.00023353363,0.0002216853,0.0002676841,0.00023635094,0.00023534845,0.0002973914,0.00036018054],"category_scores_gemma":[0.00034978022,0.00008127265,0.00017678896,0.000113459624,0.00043727772,0.0004779511,0.00019549027,0.00017361995,0.00007308173],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00036901204,0.000039415958,0.0048931725,0.00029407145,0.000032393382,0.0010111682,0.00036030167,0.00412002,0.97169185,0.0049594096,0.00012544262,0.012103704],"study_design_scores_gemma":[0.00002587,0.00071797444,0.015721288,0.000052204294,0.0000831758,0.0013625033,0.00026839084,0.033040866,0.94224125,0.0034851437,0.0029734718,0.000027910026],"about_ca_topic_score_codex":0.00021430236,"about_ca_topic_score_gemma":0.00030623868,"teacher_disagreement_score":0.00036018054,"about_ca_system_score_codex":0.00015340901,"about_ca_system_score_gemma":0.00010833358,"threshold_uncertainty_score":0.0012049675},"labels":[],"label_agreement":null},{"id":"W2119103826","doi":"10.1109/led.2005.855421","title":"A novel a-Si:H AMOLED pixel circuit based on short-term stress stability of a-Si:H TFTs","year":2005,"lang":"en","type":"article","venue":"IEEE Electron Device Letters","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":11,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"AMOLED; Thin-film transistor; Materials science; OLED; Threshold voltage; Active matrix; Optoelectronics; Transistor; Diode; Logic gate; Pixel; Stress (linguistics); Amorphous silicon; Voltage; Electrical engineering; Silicon; Electronic engineering; Computer science; Engineering; Crystalline silicon; Nanotechnology; Artificial intelligence","score_opus":0.01767157533467293,"score_gpt":0.2192024062976545,"score_spread":0.20153083096298158,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2119103826","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.8748205,0.0013648253,0.114452325,0.000326368,0.00024210558,0.00011762186,0.0003714421,0.0028342826,0.005470582],"genre_scores_gemma":[0.95314413,0.00022277444,0.043994654,0.00016521644,0.00009026217,0.00004256305,0.00009173169,0.00004484023,0.0022038168],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999093,0.000005918773,0.000006157709,0.00003459243,0.000030105344,0.000013874719],"domain_scores_gemma":[0.99984527,0.000050797218,0.00002139268,0.000023505727,0.000040373285,0.000018707473],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00006847789,0.00012595477,0.00023768784,0.00014447958,0.00029170414,0.00035811678,0.0008457341,0.00039340774,0.0014221923],"category_scores_gemma":[0.00015518836,0.00012456188,0.00014150752,0.00016831988,0.0002129237,0.00043594462,0.00019393652,0.00021172015,0.0002364715],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00013721862,0.000036934638,0.00058950053,0.00007971926,0.000019645457,0.00019423812,0.000040507784,0.00040437843,0.9713515,0.00074570935,0.00061097444,0.025789656],"study_design_scores_gemma":[0.000047230056,0.00048784565,0.0020406547,0.0000067443375,0.000052619383,0.00083056756,0.000018401393,0.015095094,0.9741555,0.00034862926,0.006901346,0.000015414049],"about_ca_topic_score_codex":0.00026980307,"about_ca_topic_score_gemma":0.0005414769,"teacher_disagreement_score":0.0014221923,"about_ca_system_score_codex":0.00021741731,"about_ca_system_score_gemma":0.0001626072,"threshold_uncertainty_score":0.0047577024},"labels":[],"label_agreement":null},{"id":"W2121689879","doi":"10.1109/led.2005.851813","title":"Modeling the partition of noise from the gate-tunneling current in MOSFETs","year":2005,"lang":"en","type":"article","venue":"IEEE Electron Device Letters","topic":"Semiconductor materials and devices","field":"Engineering","cited_by":19,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McMaster University","funders":"","keywords":"Noise (video); Time-dependent gate oxide breakdown; Gate oxide; Quantum tunnelling; AND gate; MOSFET; Physics; Flicker noise; Current (fluid); Logic gate; Computational physics; Optoelectronics; Electrical engineering; Noise figure; Voltage; Transistor; Engineering; Computer science; Quantum mechanics","score_opus":0.017666844007351103,"score_gpt":0.23523888104125293,"score_spread":0.21757203703390182,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2121689879","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.41063705,0.0007833898,0.5773995,0.0001614119,0.000057639805,0.0000838164,0.00012974475,0.0003409086,0.010406549],"genre_scores_gemma":[0.9835992,0.00027182238,0.014253557,0.00003477532,0.000023653902,0.00004602243,0.00006756716,0.00003995216,0.0016635094],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.999819,0.00003902266,0.000008442131,0.000029091472,0.00007382262,0.000030717434],"domain_scores_gemma":[0.99971753,0.00014932241,0.00003885602,0.00003291293,0.000041186777,0.000020084357],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0003730518,0.00066214916,0.00047049872,0.00049544906,0.0002697406,0.0006781359,0.00080911495,0.0005877561,0.0005940535],"category_scores_gemma":[0.0012719611,0.000253444,0.0005030514,0.000298425,0.0007702649,0.0009770744,0.00045153763,0.00037291684,0.00024485931],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000120003504,0.000069705915,0.0013570127,0.00009559379,0.00003642834,0.00020439934,0.00015182949,0.88394475,0.031729218,0.07371487,0.00027354003,0.008302644],"study_design_scores_gemma":[0.0000035567268,0.000014794546,0.00017791396,0.0000057151856,0.0000062531776,0.00003774182,0.000007125203,0.9910842,0.0013229005,0.007190658,0.00014500406,0.000004144347],"about_ca_topic_score_codex":0.0016268999,"about_ca_topic_score_gemma":0.0015723925,"teacher_disagreement_score":0.0016268999,"about_ca_system_score_codex":0.00073343347,"about_ca_system_score_gemma":0.0004295869,"threshold_uncertainty_score":0.005321443},"labels":[],"label_agreement":null},{"id":"W2122969782","doi":"10.1109/led.2008.917114","title":"Ultra-Low-Voltage Schottky-Barrier Field-Enhanced Electron Emission From Gold Nanowires Electrochemically Grown in Modified Porous Alumina Templates","year":2008,"lang":"en","type":"article","venue":"IEEE Electron Device Letters","topic":"Anodic Oxide Films and Nanostructures","field":"Materials Science","cited_by":10,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Université de Moncton; Concordia University","funders":"","keywords":"Field electron emission; Materials science; Nanowire; Amorphous solid; Schottky barrier; Nanotechnology; Anode; Cathode; Diamond; Porosity; Schottky diode; Optoelectronics; Template; Carbon nanotube; Electron; Electrode; Composite material; Chemistry; Crystallography","score_opus":0.006907929195118361,"score_gpt":0.22177050597422807,"score_spread":0.2148625767791097,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2122969782","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9929536,0.00044634967,0.005168763,0.000053258053,0.00002212732,0.000012235085,0.00011291775,0.00007420108,0.0011565324],"genre_scores_gemma":[0.99324083,0.00035890978,0.0043105683,0.000018245602,0.000009337935,0.000009730896,0.00011142538,0.000016358312,0.001924501],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998863,0.000008830997,0.000010467414,0.000025118572,0.000042388623,0.000026802943],"domain_scores_gemma":[0.99986005,0.00005117793,0.000027290835,0.0000148529325,0.00002389989,0.000022590057],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00017048251,0.00026670384,0.00021025604,0.00017733648,0.000101350815,0.0003390378,0.0002641255,0.00030547034,0.00052703894],"category_scores_gemma":[0.00024421184,0.00018129082,0.00020684351,0.00013250917,0.00021075824,0.00028122266,0.00019244976,0.0002928472,0.00022392733],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000013894496,0.00000329275,0.00006170726,0.000015678868,0.0000017510425,0.000031963056,0.000010510866,0.000036405574,0.9991549,0.000069549176,0.000008723044,0.0005914407],"study_design_scores_gemma":[0.0000027988824,0.000021881604,0.00050928316,0.0000014229134,0.000002643084,0.000046061243,0.0000072522266,0.00035816507,0.9987828,0.000028979544,0.00023648862,0.0000021580927],"about_ca_topic_score_codex":0.0005216746,"about_ca_topic_score_gemma":0.0009483868,"teacher_disagreement_score":0.00052703894,"about_ca_system_score_codex":0.00024356958,"about_ca_system_score_gemma":0.00013575955,"threshold_uncertainty_score":0.0017672777},"labels":[],"label_agreement":null},{"id":"W2128313562","doi":"10.1109/led.2011.2160327","title":"Low Dark-Current Lateral Amorphous-Selenium Metal–Semiconductor–Metal Photodetector","year":2011,"lang":"en","type":"article","venue":"IEEE Electron Device Letters","topic":"Semiconductor materials and interfaces","field":"Physics and Astronomy","cited_by":23,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Photodetector; Dark current; Optoelectronics; Materials science; Metal; Semiconductor; Current (fluid); Amorphous semiconductors; Silicon; Electrical engineering; Metallurgy; Engineering","score_opus":0.023531185792536855,"score_gpt":0.24433521234712305,"score_spread":0.2208040265545862,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2128313562","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9220843,0.0013132758,0.062587075,0.00031406112,0.00010058149,0.00006842317,0.00039656868,0.0013700774,0.011765731],"genre_scores_gemma":[0.95988536,0.0002654717,0.03433476,0.00014401587,0.00003987253,0.000033460637,0.0001258623,0.000027755272,0.0051434794],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99971,0.000027026668,0.000014105288,0.00006846435,0.00015647573,0.0000239033],"domain_scores_gemma":[0.999736,0.00006482855,0.000062650106,0.000043746008,0.000067262365,0.00002550441],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00019910262,0.00026416403,0.00034172644,0.00027760665,0.00024734653,0.0005337567,0.0008712416,0.00045623563,0.0017762732],"category_scores_gemma":[0.00028760085,0.00017262241,0.00014919441,0.00024793585,0.0003250997,0.0006029578,0.00047781336,0.00027401856,0.00081480824],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00014691107,0.000084400795,0.0017851051,0.00007666941,0.00001886963,0.00017310685,0.00004252669,0.00024784662,0.98422575,0.0012075383,0.00068348384,0.011307832],"study_design_scores_gemma":[0.000024298457,0.00031840437,0.0018993148,0.000010033184,0.000023351224,0.00062851154,0.000026303156,0.011680146,0.9794064,0.00017403266,0.0057875556,0.000021655253],"about_ca_topic_score_codex":0.00033442237,"about_ca_topic_score_gemma":0.00093088043,"teacher_disagreement_score":0.0017762732,"about_ca_system_score_codex":0.0003341623,"about_ca_system_score_gemma":0.00028441488,"threshold_uncertainty_score":0.0059422255},"labels":[],"label_agreement":null},{"id":"W2133366563","doi":"10.1109/led.2008.2007509","title":"Improved RF Power Performance in a 0.18-$\\mu\\hbox{m}$ MOSFET Which Uses an Asymmetric Drain Design","year":2008,"lang":"en","type":"article","venue":"IEEE Electron Device Letters","topic":"Radio Frequency Integrated Circuit Design","field":"Engineering","cited_by":4,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"National Research Council Canada","funders":"","keywords":"MOSFET; Transistor; Materials science; Amplifier; Power MOSFET; Electrical engineering; Power (physics); RF power amplifier; Power semiconductor device; Optoelectronics; Electronic engineering; CMOS; Engineering; Physics; Voltage","score_opus":0.02203394844062068,"score_gpt":0.223746474652986,"score_spread":0.20171252621236532,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2133366563","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99435544,0.0001378263,0.003287338,0.00007618964,0.000024702973,0.000007471033,0.00008702383,0.00007722703,0.0019467926],"genre_scores_gemma":[0.99286836,0.000108000866,0.0051877066,0.000024087083,0.000014350227,0.000007271544,0.00006976173,0.000024878771,0.0016954462],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99990785,0.000008127033,0.0000052494283,0.000020413576,0.000034535322,0.000023808601],"domain_scores_gemma":[0.9998416,0.000035633853,0.000025389954,0.000015632499,0.000059028178,0.0000227491],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00014089074,0.00024911825,0.00019105547,0.00012909289,0.00014082386,0.00026650558,0.00040465716,0.00024022427,0.0012107377],"category_scores_gemma":[0.00028052853,0.00011856187,0.00012765032,0.00013813865,0.00018748753,0.00032709123,0.00013890024,0.00019410727,0.00036754576],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00008388866,0.000019046249,0.00066231465,0.00002772207,0.00000580592,0.00009999375,0.000058371017,0.00032874543,0.9952284,0.00067414175,0.00019529769,0.0026162795],"study_design_scores_gemma":[0.00006184991,0.0009395369,0.0049632206,0.000013227827,0.00005313461,0.00063275715,0.00005653572,0.011689309,0.9765667,0.00042660284,0.0045763156,0.000021002954],"about_ca_topic_score_codex":0.00067074544,"about_ca_topic_score_gemma":0.001183437,"teacher_disagreement_score":0.0012107377,"about_ca_system_score_codex":0.00025909502,"about_ca_system_score_gemma":0.00016887675,"threshold_uncertainty_score":0.004050374},"labels":[],"label_agreement":null},{"id":"W2133495728","doi":"10.1109/led.2005.854356","title":"Temporary extrusion failures in accelerated lifetime tests of copper interconnects","year":2005,"lang":"en","type":"article","venue":"IEEE Electron Device Letters","topic":"Copper Interconnects and Reliability","field":"Materials Science","cited_by":3,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Simon Fraser University","funders":"","keywords":"Electromigration; Extrusion; Copper interconnect; Materials science; Failure mode and effects analysis; Copper; Short circuit; Metallurgy; Leakage (economics); Composite material; Voltage; Electrical engineering; Engineering","score_opus":0.016416075749833246,"score_gpt":0.27326759386079946,"score_spread":0.25685151811096624,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2133495728","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99789715,0.00020683256,0.0016178153,0.000008881046,0.000006875252,0.0000073048614,0.000030438548,0.000046213605,0.00017848898],"genre_scores_gemma":[0.99877304,0.00004256106,0.00066973397,0.0000074643685,0.0000028293987,0.000007920381,0.000051993604,0.000008900055,0.00043558443],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9994661,0.00008797456,0.000035806774,0.000092641996,0.00023171755,0.000085711385],"domain_scores_gemma":[0.9986388,0.0003577973,0.00034422506,0.00018512894,0.00035766407,0.000116336996],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00052041456,0.0002875493,0.00033568262,0.00041096192,0.00027599654,0.00020990852,0.00042267345,0.0005074184,0.00079760235],"category_scores_gemma":[0.0015849672,0.0002562531,0.00025871018,0.00033402405,0.00036614685,0.0004917767,0.00039139873,0.00036604985,0.00015204927],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0010421266,0.000078118435,0.009791746,0.00014097181,0.00004034437,0.00112255,0.000666891,0.001902578,0.9712064,0.00023525291,0.0002230561,0.013550078],"study_design_scores_gemma":[0.000057741363,0.009915774,0.051769543,0.000029601715,0.000072533374,0.0020606408,0.00023513885,0.007548139,0.9257109,0.000115007,0.002431709,0.000053297674],"about_ca_topic_score_codex":0.00033685676,"about_ca_topic_score_gemma":0.00064404676,"teacher_disagreement_score":0.00079760235,"about_ca_system_score_codex":0.0002476016,"about_ca_system_score_gemma":0.00011209923,"threshold_uncertainty_score":0.0027521849},"labels":[],"label_agreement":null},{"id":"W2134352829","doi":"10.1109/led.2011.2149492","title":"Dielectrophoresis-Assembled ZnO Nanowire Oxygen Sensors","year":2011,"lang":"en","type":"article","venue":"IEEE Electron Device Letters","topic":"Gas Sensing Nanomaterials and Sensors","field":"Engineering","cited_by":29,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of British Columbia","funders":"","keywords":"Materials science; Dielectrophoresis; Nanowire; Ohmic contact; Annealing (glass); Nanotechnology; Oxygen sensor; Optoelectronics; Nanosensor; Schottky diode; Graphene; Electrode; Oxygen; Schottky barrier; Diode; Layer (electronics); Composite material; Chemistry; Microfluidics","score_opus":0.014607516053455007,"score_gpt":0.19212846437189085,"score_spread":0.17752094831843584,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2134352829","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9517235,0.0014886946,0.04022105,0.00016525111,0.00026552458,0.00014653342,0.0010343147,0.00057658996,0.0043785432],"genre_scores_gemma":[0.9547759,0.0008572879,0.038285825,0.00010813013,0.000036483045,0.00011409343,0.00057335134,0.000033262982,0.005215539],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9997787,0.000012189636,0.000011878796,0.00007558349,0.00009277769,0.000028964098],"domain_scores_gemma":[0.9998853,0.000028637955,0.000027225002,0.000013067234,0.00003060487,0.000015179001],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00010593901,0.0003657535,0.00029197516,0.00017256103,0.00011562183,0.00021203957,0.00039720687,0.00027146708,0.00062571216],"category_scores_gemma":[0.0002300393,0.00024064218,0.00012587,0.0001675666,0.00013146758,0.0002321282,0.00019673693,0.00030387653,0.00024761006],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000011848588,0.000007953377,0.00010072692,0.000017185079,0.000001793442,0.000017843226,0.000006016248,0.00006168704,0.99884194,0.000037965016,0.000039872953,0.0008552036],"study_design_scores_gemma":[0.000004941318,0.000024077273,0.0011920645,0.0000013241654,0.00000303828,0.000028843091,0.0000056567083,0.0010892818,0.997124,0.000026063251,0.00049765006,0.0000028818001],"about_ca_topic_score_codex":0.00039549335,"about_ca_topic_score_gemma":0.001451254,"teacher_disagreement_score":0.00062571216,"about_ca_system_score_codex":0.000298017,"about_ca_system_score_gemma":0.00007857609,"threshold_uncertainty_score":0.0021623373},"labels":[],"label_agreement":null},{"id":"W2138008752","doi":"10.1109/led.2009.2023382","title":"Low-Frequency Noise Partition of Asymmetric MOS Transistors Operating in Linear Regime","year":2009,"lang":"en","type":"article","venue":"IEEE Electron Device Letters","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":4,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McMaster University","funders":"","keywords":"Transistor; Noise (video); Materials science; Electrical engineering; Flicker noise; Threshold voltage; Infrasound; Electronic engineering; Voltage; Optoelectronics; Physics; Acoustics; Noise figure; Engineering; Computer science; CMOS","score_opus":0.01120058503872795,"score_gpt":0.2355898784611932,"score_spread":0.22438929342246525,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2138008752","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.96287274,0.00019162781,0.03227625,0.00004447196,0.0000132543355,0.000015791093,0.000073151794,0.00012397698,0.004388773],"genre_scores_gemma":[0.9986815,0.000026279133,0.00086999347,0.000007316727,0.0000058645846,0.0000060666357,0.000033282377,0.000010048064,0.00035969674],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999125,0.000011321887,0.000005027958,0.000020075098,0.000035566,0.000015543132],"domain_scores_gemma":[0.9998111,0.00007812524,0.000031686308,0.000025203497,0.000031636093,0.00002224328],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000113065515,0.00031268733,0.00023606491,0.00047325031,0.00021132929,0.0004355722,0.00030037886,0.00022563201,0.0013974919],"category_scores_gemma":[0.00047023772,0.000095749696,0.00021627768,0.00014616121,0.0003558811,0.00034369674,0.00022153043,0.00016977024,0.0002587178],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0010222509,0.00009456627,0.004292046,0.000083541956,0.000037530903,0.0007612929,0.00022753344,0.0335906,0.92764014,0.016433485,0.00019009555,0.015627032],"study_design_scores_gemma":[0.000050789975,0.00053441135,0.016058126,0.000036442492,0.000098327466,0.0011393118,0.00014330717,0.66890335,0.2891797,0.02278895,0.001029499,0.00003777491],"about_ca_topic_score_codex":0.00028744212,"about_ca_topic_score_gemma":0.000321996,"teacher_disagreement_score":0.0013974919,"about_ca_system_score_codex":0.00030947517,"about_ca_system_score_gemma":0.00008266663,"threshold_uncertainty_score":0.0046750903},"labels":[],"label_agreement":null},{"id":"W2139240469","doi":"10.1109/led.2009.2036452","title":"Silicon X-Ray Detector With Integrated Thin-Film Transistor for Biomedical Applications","year":2010,"lang":"en","type":"article","venue":"IEEE Electron Device Letters","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":8,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Photodiode; Thin-film transistor; Optoelectronics; Silicon; Detector; Transistor; Materials science; X-ray detector; Electrical engineering; Physics; Optics; Nanotechnology; Engineering; Voltage","score_opus":0.005274924728868853,"score_gpt":0.20341371278112116,"score_spread":0.19813878805225232,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2139240469","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.2647523,0.017421853,0.6638611,0.0023223287,0.0018731962,0.00035489298,0.0037469107,0.010147279,0.03552016],"genre_scores_gemma":[0.47721443,0.004576152,0.4819627,0.0010006989,0.00044687904,0.00017432305,0.0025409688,0.00027636535,0.031807464],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998265,0.000017554517,0.000010903799,0.000045962955,0.00008770122,0.00001144807],"domain_scores_gemma":[0.999843,0.000052105872,0.000020905503,0.000015040073,0.00005388025,0.000015138358],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00020439013,0.00033384672,0.000353016,0.00028818107,0.00017885104,0.00045776126,0.00081649993,0.00068004156,0.0046121418],"category_scores_gemma":[0.00026939798,0.00026733827,0.00032100783,0.00033130895,0.00017150873,0.00052517944,0.00024026755,0.00036585674,0.0015358755],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0001233175,0.000022298425,0.00043541135,0.00018485491,0.000039471626,0.00022503674,0.000019137664,0.00021190426,0.97982943,0.0012888476,0.004830325,0.012789972],"study_design_scores_gemma":[0.000065305256,0.0004113626,0.0024560245,0.000035588226,0.00011599717,0.0020403904,0.00003432921,0.020491477,0.9373229,0.0004444252,0.036546275,0.000035963425],"about_ca_topic_score_codex":0.00038455744,"about_ca_topic_score_gemma":0.0012090016,"teacher_disagreement_score":0.0046121418,"about_ca_system_score_codex":0.00050774374,"about_ca_system_score_gemma":0.00035029248,"threshold_uncertainty_score":0.015429199},"labels":[],"label_agreement":null},{"id":"W2146367865","doi":"10.1109/led.2004.825157","title":"A New Method for the Channel-Length Extraction in MOSFETs With Sub-2-nm Gate Oxide","year":2004,"lang":"en","type":"article","venue":"IEEE Electron Device Letters","topic":"Semiconductor materials and devices","field":"Engineering","cited_by":14,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McMaster University","funders":"","keywords":"MOSFET; Gate oxide; Materials science; Optoelectronics; Oxide; Logic gate; Channel (broadcasting); Length measurement; Electronic engineering; Electrical engineering; Computer science; Transistor; Physics; Engineering; Optics; Voltage","score_opus":0.01110548579369033,"score_gpt":0.2573661428960163,"score_spread":0.24626065710232595,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2146367865","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.01890803,0.00220943,0.9731953,0.00010371569,0.0003400431,0.00017602534,0.0004982718,0.0022945383,0.0022746245],"genre_scores_gemma":[0.07321412,0.0009076548,0.9200846,0.00009696773,0.00008552509,0.0003368472,0.00034969376,0.00019680744,0.0047278646],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9996637,0.000031681964,0.000015591488,0.00007246675,0.00019871583,0.000017785485],"domain_scores_gemma":[0.99949276,0.000194149,0.00007209545,0.00007193475,0.00014093706,0.000028150394],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00038635795,0.00096210296,0.0007036287,0.001562658,0.0004863896,0.00045240493,0.0010206593,0.0008155555,0.0019917511],"category_scores_gemma":[0.00072649034,0.00056729896,0.00037957955,0.00070041005,0.00045212943,0.0011285825,0.00057588896,0.0010196344,0.0010138222],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00010548794,0.000069872374,0.0010305739,0.00062679173,0.000077811834,0.00021479455,0.00017205636,0.0021837605,0.8103144,0.004689722,0.0026674164,0.17784722],"study_design_scores_gemma":[0.00011876597,0.00045926232,0.009276381,0.0000908889,0.00012601753,0.0029261434,0.00008003327,0.1369909,0.7976036,0.006501685,0.045463275,0.00036305684],"about_ca_topic_score_codex":0.0007176583,"about_ca_topic_score_gemma":0.002045172,"teacher_disagreement_score":0.0019917511,"about_ca_system_score_codex":0.0004792693,"about_ca_system_score_gemma":0.0005518642,"threshold_uncertainty_score":0.006663084},"labels":[],"label_agreement":null},{"id":"W2146928781","doi":"10.1109/led.2007.900876","title":"Use of a High-Work-Function Ni Electrode to Improve the Stress Reliability of Analog $\\hbox{SrTiO}_{3}$ Metal–Insulator–Metal Capacitors","year":2007,"lang":"en","type":"article","venue":"IEEE Electron Device Letters","topic":"Semiconductor materials and devices","field":"Engineering","cited_by":40,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"National Research Council Canada","funders":"","keywords":"Capacitor; Materials science; Capacitance; Electrode; Stress (linguistics); Insulator (electricity); Optoelectronics; Electrolytic capacitor; Film capacitor; Reliability (semiconductor); Work function; Voltage; Electrical engineering; Metal; Metallurgy; Chemistry; Engineering; Physics","score_opus":0.010303995775852224,"score_gpt":0.21117106807315456,"score_spread":0.20086707229730233,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2146928781","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99839056,0.0003360912,0.00088940765,0.000056415513,0.00001657555,0.000005366436,0.000020165837,0.00002620217,0.0002593134],"genre_scores_gemma":[0.99782145,0.00015272015,0.0016634859,0.000017536733,0.000011250964,0.0000034231596,0.000028752354,0.000011112625,0.00029009287],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99987495,0.000014708655,0.000012578819,0.000026151212,0.00003665552,0.000034815333],"domain_scores_gemma":[0.9996834,0.00006501478,0.000075860284,0.00005224453,0.00008981593,0.00003357338],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00021549014,0.00034634426,0.00023254998,0.0001417252,0.00022315176,0.00033735795,0.0003934797,0.00029401178,0.00057365245],"category_scores_gemma":[0.0005160248,0.00012724429,0.00011126377,0.00013071657,0.00029711906,0.000515264,0.00022685078,0.00028677066,0.00009262971],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000082369595,0.000021490323,0.00055010716,0.000047429843,0.0000110847,0.0000945742,0.000040793293,0.00036504344,0.9963407,0.00008061797,0.000030369401,0.002335358],"study_design_scores_gemma":[0.000005665732,0.00018750627,0.0011969811,0.0000023424163,0.000014287823,0.000065087384,0.000024932098,0.0013315629,0.9968515,0.000016618054,0.00029863714,0.0000048272545],"about_ca_topic_score_codex":0.0005070664,"about_ca_topic_score_gemma":0.0009486652,"teacher_disagreement_score":0.00057365245,"about_ca_system_score_codex":0.00019370735,"about_ca_system_score_gemma":0.00012625793,"threshold_uncertainty_score":0.0019190907},"labels":[],"label_agreement":null},{"id":"W2155354131","doi":"10.1109/led.2007.897873","title":"A Novel Silicon Photovoltaic Cell Using a Low-Temperature Quasi-Epitaxial Silicon Emitter","year":2007,"lang":"en","type":"article","venue":"IEEE Electron Device Letters","topic":"Silicon and Solar Cell Technologies","field":"Engineering","cited_by":10,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"National Renewable Energy Laboratory","keywords":"Silicon; Materials science; Common emitter; Optoelectronics; Substrate (aquarium); Epitaxy; Monocrystalline silicon; Solar cell; Chemical vapor deposition; Fabrication; Crystalline silicon; Photovoltaic system; Hybrid silicon laser; Nanotechnology; Electrical engineering; Layer (electronics)","score_opus":0.009593205630222285,"score_gpt":0.2220916820669842,"score_spread":0.21249847643676192,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2155354131","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.93973947,0.0036018374,0.045098647,0.00038807248,0.00032162844,0.00009189627,0.00072769495,0.00065050373,0.00938022],"genre_scores_gemma":[0.9335399,0.0020152326,0.055764,0.00016941469,0.00015813444,0.000078824225,0.00053007115,0.00004542382,0.0076988805],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999404,0.0000026565647,0.0000026828804,0.000016613334,0.000028794046,0.000008748787],"domain_scores_gemma":[0.99995637,0.0000083722825,0.000006205586,0.000005755321,0.000013517946,0.000009836569],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000074289244,0.00016832277,0.00034793757,0.00009945347,0.00026989132,0.00039900898,0.00065128994,0.00036077434,0.0011072651],"category_scores_gemma":[0.00006430108,0.00015854654,0.00017020495,0.00015422684,0.00018106918,0.00048342493,0.0002071828,0.0003407081,0.0005360837],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0000181723,0.000011951249,0.00011126778,0.00003796332,0.000004516395,0.00011897012,0.0000097121365,0.000108456254,0.99665266,0.00028435155,0.00012070173,0.0025213743],"study_design_scores_gemma":[0.00008091011,0.00050247187,0.0032652456,0.000015895706,0.00004483498,0.001646492,0.000026573322,0.0073384563,0.9733459,0.00037438117,0.013333825,0.000025198835],"about_ca_topic_score_codex":0.0002806096,"about_ca_topic_score_gemma":0.0011210868,"teacher_disagreement_score":0.0011072651,"about_ca_system_score_codex":0.00020552437,"about_ca_system_score_gemma":0.00018504322,"threshold_uncertainty_score":0.0037041903},"labels":[],"label_agreement":null},{"id":"W2156426096","doi":"10.1109/led.2005.848120","title":"Characterization of silver CPWs for applications in silicon MMICs","year":2005,"lang":"en","type":"article","venue":"IEEE Electron Device Letters","topic":"Semiconductor materials and interfaces","field":"Physics and Astronomy","cited_by":9,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Carleton University","funders":"","keywords":"Electromigration; Materials science; Silicon; Resistive touchscreen; Electronic circuit; Optoelectronics; Fabrication; Microwave; Monolithic microwave integrated circuit; Integrated circuit; Electronic engineering; Electrical engineering; CMOS; Computer science; Telecommunications; Engineering; Composite material","score_opus":0.010181596634427024,"score_gpt":0.2525291323046788,"score_spread":0.2423475356702518,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2156426096","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9936014,0.00013504345,0.0047722887,0.00002767833,0.00001240009,0.0000209524,0.00012318004,0.00009289014,0.0012141346],"genre_scores_gemma":[0.9948822,0.00007298829,0.0038421543,0.000012312698,0.0000031221853,0.000023300176,0.00015950213,0.000024046338,0.000980477],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999114,0.0000065447916,0.00000559937,0.000021807422,0.00003981008,0.000014780963],"domain_scores_gemma":[0.9997055,0.000059708338,0.000048341943,0.00003020163,0.00013351905,0.000022731583],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00012139722,0.0002227693,0.000113629176,0.00024251567,0.00018474265,0.00023160868,0.00023862177,0.0003330723,0.00047792832],"category_scores_gemma":[0.0005213122,0.00010624128,0.00011164862,0.00016194864,0.00016224834,0.00014424762,0.00008561215,0.00017158988,0.000171738],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00004219217,0.000011109802,0.00088346476,0.000018630664,0.0000018714296,0.000044628585,0.00003144241,0.00014592234,0.9972017,0.000080187405,0.000043771608,0.0014950378],"study_design_scores_gemma":[0.0000063385964,0.00019616648,0.004166686,0.0000031183974,0.000008327368,0.000105308725,0.00003298017,0.0027218778,0.9918224,0.000040091396,0.0008933656,0.0000032282294],"about_ca_topic_score_codex":0.000632292,"about_ca_topic_score_gemma":0.00071624294,"teacher_disagreement_score":0.000632292,"about_ca_system_score_codex":0.00017266735,"about_ca_system_score_gemma":0.00010531302,"threshold_uncertainty_score":0.0015988946},"labels":[],"label_agreement":null},{"id":"W2160456201","doi":"10.1109/led.2005.848116","title":"Markov model for threshold-voltage shift in amorphous silicon TFTs for variable gate bias","year":2005,"lang":"en","type":"article","venue":"IEEE Electron Device Letters","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":32,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Threshold voltage; Materials science; Optoelectronics; Silicon; Amorphous silicon; Logic gate; Amorphous semiconductors; Variable (mathematics); Amorphous solid; Voltage; Electronic engineering; Electrical engineering; Computer science; Transistor; Engineering; Chemistry; Mathematics; Crystalline silicon; Crystallography","score_opus":0.018244506459026925,"score_gpt":0.22875465796676886,"score_spread":0.21051015150774194,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2160456201","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.33715314,0.0015525384,0.64123595,0.002030639,0.00013808279,0.00012216749,0.0011395764,0.00092013937,0.015707666],"genre_scores_gemma":[0.98411417,0.00048844196,0.006394031,0.00013941932,0.000033222794,0.00011921847,0.00024374133,0.00005264981,0.008415173],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99974185,0.00004865526,0.000011688804,0.00005945912,0.00006313481,0.000075141725],"domain_scores_gemma":[0.99869496,0.00089028396,0.00013064897,0.000051428113,0.00017818113,0.0000545493],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00069052074,0.0005860014,0.0010236513,0.00041449448,0.0004968333,0.0006748394,0.001363689,0.0018046502,0.00361942],"category_scores_gemma":[0.0025551126,0.0003809442,0.00067164964,0.0004581026,0.00086644694,0.0013646919,0.00037736603,0.0012331682,0.0005292459],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0001258179,0.000022728243,0.00087575393,0.000052461168,0.000023073591,0.00023660842,0.00012562727,0.960838,0.0057792547,0.028452136,0.0007534445,0.0027150207],"study_design_scores_gemma":[0.0000046823443,0.000008172534,0.0001120582,0.0000029215614,0.000005025535,0.000017438015,0.000004246195,0.99666554,0.0003046052,0.0027854417,0.000086009,0.0000038580174],"about_ca_topic_score_codex":0.010772955,"about_ca_topic_score_gemma":0.009642282,"teacher_disagreement_score":0.010772955,"about_ca_system_score_codex":0.0018544869,"about_ca_system_score_gemma":0.0006487614,"threshold_uncertainty_score":0.021420479},"labels":[],"label_agreement":null},{"id":"W2160491217","doi":"10.1109/led.2006.887624","title":"On-Pixel Voltage-Controlled Oscillator in Amorphous-Silicon Technology for Digital Imaging Applications","year":2007,"lang":"en","type":"article","venue":"IEEE Electron Device Letters","topic":"CCD and CMOS Imaging Sensors","field":"Engineering","cited_by":11,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Simon Fraser University","funders":"","keywords":"Ring oscillator; Materials science; Optoelectronics; Amorphous silicon; Thin-film transistor; Transistor; Voltage; Silicon; Linearity; Pixel; Sensitivity (control systems); Electrical engineering; Electronic engineering; Voltage-controlled oscillator; Computer science; CMOS; Engineering; Optics; Physics; Nanotechnology; Crystalline silicon","score_opus":0.0031977764793404083,"score_gpt":0.2164556694495268,"score_spread":0.21325789297018638,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2160491217","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.69344234,0.0024064255,0.28644755,0.000369903,0.00030160518,0.00018010726,0.0001750524,0.00190745,0.014769508],"genre_scores_gemma":[0.9324193,0.00039310596,0.06319766,0.000081392835,0.00008221651,0.000037105485,0.000072186915,0.000038185946,0.0036788036],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99984264,0.00003098673,0.000007503439,0.00003522143,0.00006343353,0.000020241367],"domain_scores_gemma":[0.9998393,0.00005337512,0.00003548706,0.00001797711,0.000041126557,0.000012641411],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00017955998,0.00019107989,0.00021401444,0.0001293952,0.00016058485,0.00033746572,0.0007176973,0.00023116413,0.0016091089],"category_scores_gemma":[0.0003279621,0.000119566874,0.00014785143,0.00009598418,0.00014372713,0.00024247686,0.00016183426,0.00023963065,0.0002685028],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00022863431,0.000085136635,0.001530876,0.00018541364,0.000040846124,0.00023610372,0.00010154521,0.0042370753,0.9338936,0.00401014,0.0010990074,0.054351486],"study_design_scores_gemma":[0.00020645278,0.0032801495,0.005664718,0.00008782071,0.00022269393,0.0016440201,0.00010903976,0.14900571,0.80822957,0.0023317288,0.029168107,0.00005002728],"about_ca_topic_score_codex":0.00031862044,"about_ca_topic_score_gemma":0.00060556,"teacher_disagreement_score":0.0016091089,"about_ca_system_score_codex":0.00018852115,"about_ca_system_score_gemma":0.00024185945,"threshold_uncertainty_score":0.0053830147},"labels":[],"label_agreement":null},{"id":"W2161652196","doi":"10.1109/led.2007.891259","title":"CMOS-Compatible Micromachined Toroid and Solenoid Inductors With High $Q$-Factors","year":2007,"lang":"en","type":"article","venue":"IEEE Electron Device Letters","topic":"Advanced MEMS and NEMS Technologies","field":"Engineering","cited_by":5,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Calgary","funders":"Asylum, Migration and Integration Fund","keywords":"Inductor; Solenoid; Q factor; CMOS; Surface micromachining; Materials science; Toroid; Fabrication; Plating (geology); Optoelectronics; Electrical engineering; Electronic engineering; Engineering; Physics","score_opus":0.0048685810532818315,"score_gpt":0.20041227152088353,"score_spread":0.1955436904676017,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2161652196","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.83564615,0.001344192,0.14788312,0.0004357409,0.0003579852,0.0004848496,0.0010279758,0.0016795736,0.011140406],"genre_scores_gemma":[0.8189312,0.00047318146,0.1722361,0.000061566,0.00004944496,0.00017547102,0.00043826338,0.00016600722,0.007468882],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99963224,0.000038364768,0.000034665398,0.000066378525,0.00015140978,0.0000768963],"domain_scores_gemma":[0.99914396,0.00011180556,0.00017091485,0.00010688379,0.00037461478,0.00009183272],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0008074874,0.000508855,0.0005234747,0.00021954083,0.00023981028,0.0007346793,0.0006824275,0.00031693085,0.0016764499],"category_scores_gemma":[0.0010598787,0.00031040388,0.00026966934,0.00032655033,0.00039085155,0.0005723578,0.00023050165,0.0003249968,0.0010811203],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00011183964,0.000021537382,0.00043712888,0.00013644797,0.000013123556,0.00016063124,0.00014658345,0.0005477596,0.9931566,0.0008008166,0.0004257435,0.0040417113],"study_design_scores_gemma":[0.000055926695,0.00034364653,0.0012193603,0.0000090116955,0.000026687585,0.00024602652,0.000058480357,0.0019317808,0.9866159,0.00012199099,0.009347115,0.000023997407],"about_ca_topic_score_codex":0.0012525121,"about_ca_topic_score_gemma":0.0031017868,"teacher_disagreement_score":0.0016764499,"about_ca_system_score_codex":0.0008260034,"about_ca_system_score_gemma":0.0007526804,"threshold_uncertainty_score":0.005993068},"labels":[],"label_agreement":null},{"id":"W2163760179","doi":"10.1109/led.2006.884712","title":"A Tunable RF MEMS Inductor on Silicon Incorporating an Amorphous Silicon Bimorph in a Low-Temperature Process","year":2006,"lang":"en","type":"article","venue":"IEEE Electron Device Letters","topic":"Radio Frequency Integrated Circuit Design","field":"Engineering","cited_by":71,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Inductor; Materials science; Silicon; Bimorph; Microelectromechanical systems; Optoelectronics; Inductance; Radio frequency; Voltage; Amorphous solid; Capacitor; Electrical engineering; Engineering; Chemistry","score_opus":0.00807935959367912,"score_gpt":0.2171377051823338,"score_spread":0.2090583455886547,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2163760179","genre_codex":"empirical","genre_gemma":"methods","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"methods","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.94733953,0.0013963373,0.042981777,0.00024801897,0.00014743907,0.00005571171,0.00013149105,0.0006150766,0.007084632],"genre_scores_gemma":[0.97438693,0.0002486682,0.022519132,0.000036240388,0.000047161466,0.000015032208,0.000056642944,0.00002141236,0.0026687887],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999074,0.000009213944,0.0000045240968,0.000021414135,0.000042346608,0.0000151411095],"domain_scores_gemma":[0.9999248,0.000013565275,0.000022950106,0.000010756262,0.000013187548,0.000014600041],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00010818957,0.0001673504,0.00016576085,0.00014030702,0.00013517812,0.0002334742,0.00042554695,0.0001932504,0.00054781046],"category_scores_gemma":[0.00009871395,0.00014144128,0.000160794,0.00012258021,0.00018820092,0.00027110576,0.00016702981,0.00022197611,0.00028613134],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0000233612,0.000010745399,0.00012858506,0.0000334258,0.0000033612887,0.00009476837,0.000017401979,0.00025550247,0.996062,0.00029432483,0.00007923943,0.002997257],"study_design_scores_gemma":[0.000032013442,0.00056445156,0.0018877111,0.000005311474,0.000028454075,0.00051787397,0.00002204934,0.008675674,0.98143595,0.00014474694,0.006673588,0.000012128612],"about_ca_topic_score_codex":0.0001805437,"about_ca_topic_score_gemma":0.00037270432,"teacher_disagreement_score":0.00054781046,"about_ca_system_score_codex":0.00020295619,"about_ca_system_score_gemma":0.0001238972,"threshold_uncertainty_score":0.0018325448},"labels":[],"label_agreement":null},{"id":"W2165581750","doi":"10.1109/led.2006.887944","title":"Robust Coupled-Quantum-Well Structure for Use in Electrorefraction Modulators","year":2007,"lang":"en","type":"article","venue":"IEEE Electron Device Letters","topic":"Semiconductor Quantum Structures and Devices","field":"Physics and Astronomy","cited_by":5,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of British Columbia","funders":"","keywords":"Robustness (evolution); Transverse plane; Physics; Quantum; Gallium arsenide; Optoelectronics; Condensed matter physics; Materials science; Chemistry; Quantum mechanics; Engineering","score_opus":0.019256732137652787,"score_gpt":0.25867591204724166,"score_spread":0.2394191799095889,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2165581750","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9486947,0.001144123,0.04446485,0.00027283723,0.00013897735,0.00009740138,0.00019668097,0.00041277692,0.004577636],"genre_scores_gemma":[0.96430236,0.00027841234,0.033916622,0.00007138773,0.000022237085,0.00004525925,0.00007937278,0.000035688336,0.001248742],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99985266,0.000016564512,0.000011110362,0.000030282914,0.000073765426,0.000015654365],"domain_scores_gemma":[0.9998235,0.000018232358,0.00006045336,0.000030832798,0.000046788566,0.000020177184],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0001860882,0.00025180567,0.0003655919,0.00017467886,0.0002546857,0.0003755143,0.0006855861,0.0004879743,0.00045281154],"category_scores_gemma":[0.00031283853,0.00018243636,0.00016562293,0.00015911083,0.0002610041,0.0004062982,0.00022304709,0.00034875036,0.00022725842],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00003664089,0.000015266405,0.000075058,0.000023564748,0.000007556625,0.00006340917,0.000016593602,0.00056329696,0.9965777,0.0009995652,0.000061283696,0.001560103],"study_design_scores_gemma":[0.00006809006,0.00046957153,0.00089937414,0.00001141903,0.000042678897,0.00026047658,0.000018460505,0.015892599,0.97795427,0.0004898384,0.0038653724,0.000027823513],"about_ca_topic_score_codex":0.00053855125,"about_ca_topic_score_gemma":0.0013291246,"teacher_disagreement_score":0.0006855861,"about_ca_system_score_codex":0.0003428794,"about_ca_system_score_gemma":0.00027963184,"threshold_uncertainty_score":0.0024877787},"labels":[],"label_agreement":null},{"id":"W2166055435","doi":"10.1109/led.2008.2000857","title":"Charge-Gated Thin-Film Transistors for High Resolution Digital Imaging Applications","year":2008,"lang":"en","type":"article","venue":"IEEE Electron Device Letters","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Thin-film transistor; Transistor; Optoelectronics; Materials science; Amplifier; Logic gate; Electrical engineering; Threshold voltage; Voltage; Static induction transistor; Gate dielectric; CMOS; Engineering; Nanotechnology","score_opus":0.008529538439310473,"score_gpt":0.19745874396033877,"score_spread":0.1889292055210283,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2166055435","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.6746072,0.027908066,0.27225414,0.0015341428,0.0007762325,0.00023150045,0.0009107556,0.0022882784,0.019489683],"genre_scores_gemma":[0.8928608,0.0054328907,0.09750154,0.00024220477,0.00010827368,0.000054061125,0.0002133104,0.000047308844,0.0035396435],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99994683,0.000006225954,0.0000026472167,0.000008813173,0.000028894663,0.0000066010452],"domain_scores_gemma":[0.999894,0.000044520915,0.000016184891,0.000010266886,0.000024457273,0.000010579627],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00012268721,0.0002609342,0.00018307797,0.000156243,0.00015210726,0.00037603732,0.00042708716,0.0003556225,0.0011866286],"category_scores_gemma":[0.0002874586,0.00012199369,0.00011479186,0.00023667495,0.00019530488,0.0003864053,0.000093418035,0.00031435044,0.00032725092],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00004270245,0.00001278102,0.00023211818,0.00012558911,0.000007636934,0.00012333441,0.000023205985,0.00063690613,0.98227227,0.0022512004,0.0006371539,0.0136351045],"study_design_scores_gemma":[0.000039244776,0.00044430164,0.0015807421,0.00003467186,0.000054404092,0.00090450153,0.000026915162,0.019145915,0.96064085,0.0017426171,0.015366726,0.00001914063],"about_ca_topic_score_codex":0.00046703455,"about_ca_topic_score_gemma":0.0011041099,"teacher_disagreement_score":0.0011866286,"about_ca_system_score_codex":0.00029396583,"about_ca_system_score_gemma":0.00017351288,"threshold_uncertainty_score":0.003969729},"labels":[],"label_agreement":null},{"id":"W2166520016","doi":"10.1109/led.2014.2298457","title":"Optimized Pre-Treatment Process for MOS-GaN Devices Passivation","year":2014,"lang":"en","type":"article","venue":"IEEE Electron Device Letters","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":34,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Université de Sherbrooke","funders":"","keywords":"Passivation; Materials science; High-electron-mobility transistor; Optoelectronics; Capacitance; Capacitor; Gallium nitride; Analytical Chemistry (journal); Transistor; Electronic engineering; Electrical engineering; Voltage; Nanotechnology; Chemistry; Electrode; Layer (electronics)","score_opus":0.0132556922726466,"score_gpt":0.2741700055751511,"score_spread":0.2609143133025045,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2166520016","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9353664,0.0044674436,0.054248467,0.00018742046,0.00026012023,0.00026169277,0.0006872681,0.00049154763,0.004029695],"genre_scores_gemma":[0.9476263,0.0022734895,0.04682309,0.00008163596,0.000038620023,0.00012697144,0.0005245375,0.00010890042,0.0023964266],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.999877,0.000010757349,0.000010108947,0.000037751746,0.000042233085,0.000022223732],"domain_scores_gemma":[0.99993575,0.000011509665,0.00001929691,0.00001093611,0.00001888142,0.0000036582294],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0001178613,0.000499052,0.00030985067,0.00017447694,0.00015298117,0.00029042462,0.0003554122,0.00030535532,0.0011908681],"category_scores_gemma":[0.00014351691,0.00017509826,0.00023211405,0.00017847081,0.00011650922,0.00021507447,0.00014083621,0.000407929,0.0003788347],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000017131159,0.000012254334,0.00016218379,0.00009218623,0.000009783966,0.000030024683,0.000011077122,0.00024453687,0.9965229,0.00008397935,0.00008146143,0.0027326057],"study_design_scores_gemma":[0.0000056705026,0.00008968464,0.0013023128,0.0000037736606,0.000014560535,0.000081305836,0.000010913328,0.0012742546,0.99504364,0.000028917204,0.0021386463,0.0000062349604],"about_ca_topic_score_codex":0.00058886886,"about_ca_topic_score_gemma":0.0015494116,"teacher_disagreement_score":0.0011908681,"about_ca_system_score_codex":0.00021771084,"about_ca_system_score_gemma":0.00027095305,"threshold_uncertainty_score":0.0039838552},"labels":[],"label_agreement":null},{"id":"W2168123177","doi":"10.1109/led.2008.2001634","title":"UV-Enhanced a-Si:H Metal–Semiconductor–Metal Photodetector","year":2008,"lang":"en","type":"article","venue":"IEEE Electron Device Letters","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":16,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Responsivity; Photodetector; Materials science; Optoelectronics; Electrode; Silicon; Ultraviolet; Quantum efficiency; Semiconductor; Amorphous silicon; Aluminium; Metal; Chemistry; Crystalline silicon; Metallurgy","score_opus":0.013748838793684073,"score_gpt":0.20398555418148862,"score_spread":0.19023671538780454,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2168123177","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9479643,0.0011237118,0.0403261,0.00023405127,0.00010337256,0.000046482746,0.00076730235,0.0019700702,0.0074645435],"genre_scores_gemma":[0.97467506,0.00024236867,0.020726588,0.0000888766,0.000027724187,0.000013980699,0.00011321747,0.00001829363,0.004093817],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998524,0.0000143613315,0.00000474297,0.00004671769,0.00006013625,0.000021573082],"domain_scores_gemma":[0.9998925,0.000029630306,0.0000174034,0.000011406834,0.000036246074,0.000012875846],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00014637657,0.00016930887,0.0002601604,0.00018149649,0.000140132,0.00031020184,0.0005264891,0.00034617522,0.0014293622],"category_scores_gemma":[0.00018675049,0.00012420262,0.0001299349,0.00027222,0.00016549112,0.0002573176,0.00018988755,0.00020800602,0.0007019951],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00010945404,0.000028200771,0.00045154447,0.000031891177,0.000011292413,0.000080026985,0.000017417491,0.00025587543,0.99148285,0.00039881942,0.000514778,0.0066177817],"study_design_scores_gemma":[0.000015126501,0.00015663753,0.0013404489,0.0000035078467,0.000013542922,0.00021107294,0.000013006276,0.008069372,0.98693466,0.00009572404,0.003139073,0.000007772915],"about_ca_topic_score_codex":0.00049277383,"about_ca_topic_score_gemma":0.0009459096,"teacher_disagreement_score":0.0014293622,"about_ca_system_score_codex":0.00032026804,"about_ca_system_score_gemma":0.00015961792,"threshold_uncertainty_score":0.0047816634},"labels":[],"label_agreement":null},{"id":"W2169507008","doi":"10.1109/led.2010.2103044","title":"High-Gain Multiple-Gate Photodetector With Nanowires in the Channel","year":2011,"lang":"en","type":"article","venue":"IEEE Electron Device Letters","topic":"Nanowire Synthesis and Applications","field":"Engineering","cited_by":7,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Dalsa Corporation; University of Waterloo","funders":"","keywords":"Photodetector; Photocurrent; Nanowire; Optoelectronics; Materials science; Channel (broadcasting); Silicon; Logic gate; Silicon nanowires; Photoconductivity; Electronic engineering; Electrical engineering; Engineering","score_opus":0.013193098376483903,"score_gpt":0.18923313823688226,"score_spread":0.17604003986039835,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2169507008","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.85861003,0.0006587514,0.1342137,0.00029985438,0.000089734225,0.00006523536,0.00025670123,0.0008162859,0.004989711],"genre_scores_gemma":[0.96279967,0.00016468015,0.03508424,0.000056058998,0.000020658936,0.000026698724,0.00005339564,0.000021347654,0.0017731517],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998703,0.000011669756,0.000005761465,0.0000365765,0.000052712872,0.000023025012],"domain_scores_gemma":[0.99985254,0.00003329761,0.000027591925,0.000020289961,0.000039654537,0.000026676347],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00012263552,0.0002886392,0.0004735078,0.00014392051,0.00028610407,0.00060663285,0.0010276997,0.00050522346,0.00052087137],"category_scores_gemma":[0.00015198548,0.00022684905,0.00029437334,0.00022665794,0.00029119538,0.0005578763,0.0002460355,0.0002700707,0.00016298892],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00048351614,0.00015742972,0.0018685537,0.000084254556,0.00008116928,0.0003580889,0.000035965826,0.018760728,0.9606194,0.0051558553,0.0005698492,0.011825231],"study_design_scores_gemma":[0.0001661646,0.0009748946,0.003939013,0.000026007017,0.00012813305,0.0006840475,0.000026082353,0.25985175,0.727696,0.0014665421,0.004968038,0.00007333557],"about_ca_topic_score_codex":0.001424018,"about_ca_topic_score_gemma":0.0033353013,"teacher_disagreement_score":0.001424018,"about_ca_system_score_codex":0.0007163887,"about_ca_system_score_gemma":0.00051999214,"threshold_uncertainty_score":0.0051977634},"labels":[],"label_agreement":null},{"id":"W2170489687","doi":"10.1109/led.2007.909854","title":"Electrical Compensation of OLED Luminance Degradation","year":2007,"lang":"en","type":"article","venue":"IEEE Electron Device Letters","topic":"Organic Light-Emitting Diodes Research","field":"Engineering","cited_by":60,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"IGNIS Innovation (Canada); University of Waterloo","funders":"","keywords":"AMOLED; OLED; Luminance; Materials science; Compensation (psychology); Optoelectronics; Diode; Pixel; Degradation (telecommunications); Active matrix; Computer science; Electronic engineering; Thin-film transistor; Engineering; Telecommunications; Artificial intelligence; Nanotechnology","score_opus":0.009310561385049645,"score_gpt":0.24758892036889232,"score_spread":0.23827835898384267,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2170489687","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9668952,0.00087092037,0.029134814,0.00020172434,0.00011136092,0.00002866276,0.00009734288,0.00047801205,0.0021819647],"genre_scores_gemma":[0.99369,0.000207278,0.0044455775,0.000054525317,0.000031873413,0.000011785483,0.000058870693,0.00002910844,0.0014709522],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998715,0.000010115951,0.00000853549,0.000029916231,0.00005526808,0.00002456741],"domain_scores_gemma":[0.99982065,0.000028042383,0.00004211953,0.000025217463,0.0000694045,0.000014654932],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000103875216,0.00022774411,0.0001428599,0.0001671281,0.00015452817,0.0002523835,0.00028691452,0.00019887266,0.00097264117],"category_scores_gemma":[0.0003553805,0.000084895844,0.00008299165,0.00008730546,0.00015312301,0.0003132537,0.00025376803,0.00022860758,0.00017136375],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000025642743,0.0000074259515,0.00021849152,0.000015795384,0.0000019235044,0.00003322537,0.000012780261,0.00010254652,0.9944442,0.00010022846,0.00003416097,0.005003617],"study_design_scores_gemma":[0.0000059901304,0.00007139959,0.0013464133,0.0000020477162,0.0000029379828,0.00008246495,0.0000073477913,0.001570807,0.9957443,0.000037991493,0.0011255263,0.000002767122],"about_ca_topic_score_codex":0.00015759967,"about_ca_topic_score_gemma":0.00033601018,"teacher_disagreement_score":0.00097264117,"about_ca_system_score_codex":0.0002248977,"about_ca_system_score_gemma":0.00012405668,"threshold_uncertainty_score":0.003253758},"labels":[],"label_agreement":null},{"id":"W2212854264","doi":"10.1109/led.2015.2410304","title":"Direct-Conversion CMOS X-Ray Imager With &lt;inline-formula&gt; &lt;tex-math notation=\"LaTeX\"&gt;$5.6 ~\\mu \\text{m} \\times 6.25~\\mu \\text{m}$ &lt;/tex-math&gt;&lt;/inline-formula&gt; Pixels","year":2015,"lang":"en","type":"article","venue":"IEEE Electron Device Letters","topic":"CCD and CMOS Imaging Sensors","field":"Engineering","cited_by":34,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Natural Sciences and Engineering Research Council of Canada; Canada Foundation for Innovation; Canadian Institutes of Health Research; CMC Microsystems","keywords":"Pixel; CMOS; Dot pitch; Physics; Noise (video); Image sensor; Optoelectronics; Materials science; Electrical engineering; Optics; Computer science; Engineering; Image (mathematics); Artificial intelligence","score_opus":0.007546501820405006,"score_gpt":0.21232029887844464,"score_spread":0.20477379705803964,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2212854264","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.224473,0.0013170318,0.70366246,0.0005303365,0.0004646063,0.0004459795,0.004348923,0.021927083,0.04283056],"genre_scores_gemma":[0.32860953,0.0007250905,0.6160614,0.00021770167,0.00009251306,0.00032191517,0.0020913586,0.0009768127,0.050903615],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9997651,0.000011890058,0.000014412116,0.00007825423,0.00011310425,0.00001721048],"domain_scores_gemma":[0.9997831,0.00005423143,0.00003292585,0.000049699727,0.00006580284,0.000014351122],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00019184867,0.0004240644,0.00042421237,0.0002704374,0.00019501049,0.00064006925,0.000961812,0.0003194828,0.014144187],"category_scores_gemma":[0.00042941925,0.00032863315,0.00021970269,0.00038418933,0.0002403606,0.0005105442,0.0003694082,0.0004756541,0.00535006],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00012541247,0.00006110799,0.0005076769,0.0002526041,0.000020202575,0.00019583182,0.000073888645,0.000901642,0.94669026,0.0041530905,0.008001059,0.039017208],"study_design_scores_gemma":[0.00003105487,0.00012910871,0.0015976382,0.0000101469195,0.000023420196,0.00064898375,0.000022632861,0.011627379,0.94902676,0.00032143973,0.036536902,0.000024578425],"about_ca_topic_score_codex":0.0005244139,"about_ca_topic_score_gemma":0.0012834698,"teacher_disagreement_score":0.014144187,"about_ca_system_score_codex":0.00044975616,"about_ca_system_score_gemma":0.0003607482,"threshold_uncertainty_score":0.047317028},"labels":[],"label_agreement":null},{"id":"W2338178895","doi":"10.1109/led.2016.2557231","title":"Multilayer MoS2 Thin-film Transistors Employing Silicon Nitride and Silicon Oxide Dielectric Layers","year":2016,"lang":"en","type":"article","venue":"IEEE Electron Device Letters","topic":"2D Materials and Applications","field":"Materials Science","cited_by":10,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Dielectric; Plasma-enhanced chemical vapor deposition; Materials science; Silicon; Gate dielectric; Analytical Chemistry (journal); Optoelectronics; Transistor; Physics; Chemistry; Organic chemistry","score_opus":0.013087523512303283,"score_gpt":0.24170350462812168,"score_spread":0.2286159811158184,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2338178895","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9967632,0.00027107776,0.0014502628,0.000014027197,0.000009182273,0.000010682468,0.00015524359,0.00005271893,0.0012735317],"genre_scores_gemma":[0.99394506,0.00035159118,0.0038057186,0.00001435957,0.000006638066,0.000013849161,0.00030155122,0.0000105038325,0.0015508019],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999281,0.0000041031376,0.000005581135,0.00002084612,0.000019977932,0.00002127784],"domain_scores_gemma":[0.9999498,0.000008748869,0.000012286219,0.00000700594,0.000010988316,0.000011190806],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00006663749,0.00038473232,0.0001930432,0.00011189002,0.00017769261,0.00027403605,0.00019520901,0.00019698977,0.0006937893],"category_scores_gemma":[0.00011809079,0.00019843511,0.00020653212,0.00012694471,0.00012802734,0.0002488671,0.0001838482,0.00016596471,0.00019272797],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00003140974,0.0000035648002,0.00018598346,0.00001849656,0.0000063954963,0.00003236686,0.00000883906,0.00013300794,0.9991217,0.000043400334,0.000018047165,0.000396697],"study_design_scores_gemma":[0.000010219114,0.00015879692,0.004104153,0.0000041577678,0.000034728273,0.00012450854,0.000029559103,0.0020289237,0.9923423,0.000035899073,0.0011216573,0.0000050844533],"about_ca_topic_score_codex":0.0015739347,"about_ca_topic_score_gemma":0.004650073,"teacher_disagreement_score":0.0015739347,"about_ca_system_score_codex":0.00025475322,"about_ca_system_score_gemma":0.00017456149,"threshold_uncertainty_score":0.0031295419},"labels":[],"label_agreement":null},{"id":"W2564119593","doi":"10.1109/led.2016.2641740","title":"Characterization of Dynamic Self-Heating in GaN HEMTs Using Gate Resistance Measurement","year":2016,"lang":"en","type":"article","venue":"IEEE Electron Device Letters","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":19,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Institut interdisciplinaire d'innovation technologique; Université de Sherbrooke","funders":"Direction Générale de l’Armement; Natural Sciences and Engineering Research Council of Canada; LabEx GANEX; Agence Nationale de la Recherche","keywords":"Materials science; Transistor; Optoelectronics; Transient (computer programming); Thermal resistance; Substrate (aquarium); Electrical impedance; Power semiconductor device; Voltage; Electrical engineering; Electronic engineering; Thermal; Computer science; Engineering; Physics","score_opus":0.014493013776296061,"score_gpt":0.23813616375813246,"score_spread":0.2236431499818364,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2564119593","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9668577,0.00027653092,0.030764038,0.0000324475,0.000020304371,0.00002588011,0.00014882127,0.00024981512,0.0016244372],"genre_scores_gemma":[0.99682343,0.00007603062,0.0027007728,0.0000072976,0.0000045494553,0.00000844626,0.00003826208,0.0000149372045,0.00032630074],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998636,0.00001706143,0.0000057005577,0.000038495415,0.000057563986,0.000017567498],"domain_scores_gemma":[0.99980885,0.000071020215,0.000033074935,0.000043337834,0.00003427965,0.000009365772],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00012614901,0.00024161283,0.00017479366,0.00023809363,0.00008539087,0.00022631392,0.00033172552,0.00020666982,0.0004251378],"category_scores_gemma":[0.00029252714,0.000098884564,0.00015702787,0.00014486487,0.0002493742,0.00028127898,0.00013662431,0.00020835678,0.0001429553],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000031815955,0.0000093079225,0.0011398337,0.000021477945,0.0000071528075,0.00007036948,0.000050049235,0.0006713862,0.9935376,0.00012255312,0.000030893483,0.0043076132],"study_design_scores_gemma":[0.000003973722,0.00017450219,0.010829747,0.0000038733024,0.000010484249,0.00025145456,0.000041266398,0.019459406,0.96851146,0.00011323303,0.0005913718,0.000009265916],"about_ca_topic_score_codex":0.00026025192,"about_ca_topic_score_gemma":0.00043267477,"teacher_disagreement_score":0.0004251378,"about_ca_system_score_codex":0.0002014977,"about_ca_system_score_gemma":0.00005959589,"threshold_uncertainty_score":0.0014619231},"labels":[],"label_agreement":null},{"id":"W2565320267","doi":"10.1109/led.2016.2637823","title":"Microcrystalline Silicon Photodiode For Large Area NIR Light Detection Applications","year":2016,"lang":"en","type":"article","venue":"IEEE Electron Device Letters","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":6,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Photodiode; Optoelectronics; Detector; Materials science; Transistor; Silicon; Near-infrared spectroscopy; Thin-film transistor; Cyanine; Microcrystalline; Optics; Voltage; Electrical engineering; Physics; Nanotechnology; Chemistry; Engineering; Fluorescence","score_opus":0.0066313040411720885,"score_gpt":0.2022256324360489,"score_spread":0.1955943283948768,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2565320267","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.71783954,0.04526899,0.19013254,0.0018592412,0.0011491764,0.00029801767,0.001670377,0.002960029,0.03882212],"genre_scores_gemma":[0.87813956,0.007004941,0.09689845,0.00043380895,0.00018392983,0.000093591625,0.00052876776,0.00007109125,0.016645987],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99979347,0.000019247522,0.000008846024,0.000064850705,0.00009210518,0.000021456153],"domain_scores_gemma":[0.99979514,0.00007270216,0.00003273326,0.000023848525,0.000056482004,0.00001903313],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00012942037,0.0002765758,0.0002605573,0.00021140126,0.00020128168,0.0003958581,0.0006416454,0.00047677098,0.0020476903],"category_scores_gemma":[0.00024091742,0.00018769772,0.00027953056,0.00039444756,0.00017746232,0.00045084904,0.0002342727,0.00046630655,0.0008543273],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00007194983,0.000021419035,0.0007316737,0.00018822087,0.000019822617,0.00016884983,0.00002777068,0.00019176505,0.97243655,0.00057791674,0.0013091416,0.024254961],"study_design_scores_gemma":[0.000014573573,0.0004754528,0.0035237994,0.000018969637,0.000059780195,0.0014608557,0.00005323689,0.0043230364,0.96050125,0.00020922428,0.02934317,0.000016649892],"about_ca_topic_score_codex":0.0006246164,"about_ca_topic_score_gemma":0.0025139458,"teacher_disagreement_score":0.0020476903,"about_ca_system_score_codex":0.00053503446,"about_ca_system_score_gemma":0.000307631,"threshold_uncertainty_score":0.006850183},"labels":[],"label_agreement":null},{"id":"W2592496147","doi":"10.1109/led.2017.2679102","title":"Current-Voltage Model for Negative Capacitance Field-Effect Transistors","year":2017,"lang":"en","type":"article","venue":"IEEE Electron Device Letters","topic":"Ferroelectric and Negative Capacitance Devices","field":"Engineering","cited_by":45,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"National Research Foundation of Korea; Ministry of Trade, Industry and Energy","keywords":"Ferroelectricity; Capacitance; Field-effect transistor; Voltage; Poisson's equation; Electrical engineering; Transistor; Threshold voltage; Hysteresis; Materials science; Physics; Electronic engineering; Topology (electrical circuits); Optoelectronics; Condensed matter physics; Engineering; Quantum mechanics; Dielectric; Electrode","score_opus":0.01805165586029089,"score_gpt":0.2658334604408462,"score_spread":0.24778180458055532,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2592496147","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.05877661,0.0014162926,0.90308523,0.0006151188,0.0002516004,0.00015055788,0.00030419737,0.0008243179,0.034576055],"genre_scores_gemma":[0.8997987,0.0014346729,0.0647439,0.00042270654,0.00012197736,0.00025248856,0.00023785839,0.00013771807,0.032850064],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9998312,0.000023835673,0.0000065850854,0.000034975877,0.00008080093,0.0000226492],"domain_scores_gemma":[0.999843,0.00005335969,0.000018659981,0.000018851602,0.00005702575,0.00000909577],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0001991277,0.00046983134,0.00049030484,0.0003866625,0.00036149527,0.0005761286,0.0018039072,0.0012284173,0.0023240126],"category_scores_gemma":[0.00056503166,0.0002022746,0.0005861938,0.00029772078,0.0005285436,0.0012605649,0.0002654919,0.00063774834,0.0009457258],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00010619456,0.00012171365,0.00063168997,0.00029836333,0.000040839906,0.0008523794,0.00041501742,0.7068487,0.089584626,0.17826724,0.0028393497,0.019993884],"study_design_scores_gemma":[0.0000031605657,0.000015254542,0.00005157288,0.0000055753285,0.000003789244,0.000078415935,0.000007701272,0.9923288,0.0012854037,0.0046780864,0.0015372859,0.000004926295],"about_ca_topic_score_codex":0.002484528,"about_ca_topic_score_gemma":0.0023254382,"teacher_disagreement_score":0.002484528,"about_ca_system_score_codex":0.0009955135,"about_ca_system_score_gemma":0.0005858556,"threshold_uncertainty_score":0.0077745914},"labels":[],"label_agreement":null},{"id":"W2597374463","doi":"10.1109/led.2017.2681579","title":"Performance Limit Projection of Germanane Field-Effect Transistors","year":2017,"lang":"en","type":"article","venue":"IEEE Electron Device Letters","topic":"Graphene research and applications","field":"Materials Science","cited_by":19,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Natural Sciences and Engineering Research Council of Canada; Compute Canada","keywords":"Transistor; Field-effect transistor; Limit (mathematics); Physics; Materials science; Channel (broadcasting); Topology (electrical circuits); Optoelectronics; Computer science; Electrical engineering; Quantum mechanics; Mathematics; Telecommunications; Engineering","score_opus":0.015354311910771948,"score_gpt":0.2888936186447046,"score_spread":0.2735393067339326,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2597374463","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9510776,0.0027953412,0.018261993,0.000673202,0.00003410078,0.000020280064,0.00026067364,0.00054243783,0.026334394],"genre_scores_gemma":[0.9930402,0.00068049814,0.0040046065,0.00006505712,0.000010369002,0.000018450717,0.0001527351,0.000037813996,0.001990203],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998078,0.00003030987,0.000005742186,0.0000339323,0.00007853884,0.000043737633],"domain_scores_gemma":[0.99974793,0.00011114745,0.0000335678,0.000025181653,0.00006692487,0.000015129169],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00023158571,0.0003387858,0.00029765553,0.0002629491,0.00027189474,0.00072158885,0.0004463077,0.00053822284,0.0021822813],"category_scores_gemma":[0.0011268192,0.00016980324,0.00021469237,0.00019633105,0.00036825423,0.0010265284,0.00048423544,0.00034169125,0.0004607249],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00064140686,0.00018244277,0.008407184,0.0006808098,0.0001374774,0.0014641939,0.00043248065,0.1653998,0.70104456,0.07612357,0.0040335837,0.04145249],"study_design_scores_gemma":[0.000026524074,0.0006269327,0.003922554,0.00010008744,0.0000623215,0.0007171885,0.00021871367,0.71376234,0.2527779,0.018148948,0.009578089,0.00005851934],"about_ca_topic_score_codex":0.001225596,"about_ca_topic_score_gemma":0.00075402326,"teacher_disagreement_score":0.0021822813,"about_ca_system_score_codex":0.0006302155,"about_ca_system_score_gemma":0.00022624597,"threshold_uncertainty_score":0.0073004365},"labels":[],"label_agreement":null},{"id":"W2619017763","doi":"10.1109/led.2017.2696946","title":"AlGaN/GaN MOS-HEMT Device Fabricated Using a High Quality PECVD Passivation Process","year":2017,"lang":"en","type":"article","venue":"IEEE Electron Device Letters","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":30,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Institut interdisciplinaire d'innovation technologique; Université de Sherbrooke","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Transconductance; High-electron-mobility transistor; Passivation; Materials science; Analytical Chemistry (journal); Electrical engineering; Nanotechnology; Chemistry; Voltage; Layer (electronics); Transistor; Organic chemistry; Engineering","score_opus":0.03725517342034805,"score_gpt":0.32829440259884474,"score_spread":0.2910392291784967,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2619017763","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9835624,0.00033835514,0.010302189,0.000115600094,0.00006157922,0.000038519716,0.00029923796,0.00016070803,0.005121431],"genre_scores_gemma":[0.98008096,0.0003262275,0.016354935,0.000038425966,0.000017325605,0.000019384966,0.00019860864,0.000025785648,0.0029384359],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999597,0.0000026392322,0.0000027037788,0.000012586558,0.000015163563,0.0000071558707],"domain_scores_gemma":[0.9999523,0.000008090799,0.000010792707,0.000011381838,0.000012659549,0.0000046775694],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00006979798,0.0001427658,0.00013009457,0.00006757356,0.00014086213,0.00024324075,0.00022628329,0.000245084,0.0008011021],"category_scores_gemma":[0.00008609108,0.000073997166,0.00012648785,0.000094168696,0.00011642116,0.00019864942,0.00007619746,0.0001873744,0.00032905512],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000013051021,0.0000058378796,0.000094815325,0.000020488185,0.0000029634605,0.000068190675,0.0000114514205,0.000060613434,0.99831235,0.00019282466,0.00006912587,0.0011482019],"study_design_scores_gemma":[0.0000069386087,0.00007585452,0.0014584451,0.0000024558751,0.00000845996,0.00026434098,0.000012216069,0.001511914,0.99414754,0.000052467585,0.002455859,0.0000035442329],"about_ca_topic_score_codex":0.0004364361,"about_ca_topic_score_gemma":0.00095994805,"teacher_disagreement_score":0.0008011021,"about_ca_system_score_codex":0.0002164493,"about_ca_system_score_gemma":0.00015646171,"threshold_uncertainty_score":0.0026800036},"labels":[],"label_agreement":null},{"id":"W2762966976","doi":"10.1109/led.2017.2763120","title":"Assessment of Germanane Field-Effect Transistors for CMOS Technology","year":2017,"lang":"en","type":"article","venue":"IEEE Electron Device Letters","topic":"Graphene research and applications","field":"Materials Science","cited_by":16,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"CMOS; Transistor; Field-effect transistor; Power–delay product; Inverter; Materials science; Voltage; Optoelectronics; Threshold voltage; Electrical engineering; Logic gate; Topology (electrical circuits); Engineering","score_opus":0.013231544452391018,"score_gpt":0.3472636110717652,"score_spread":0.3340320666193742,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2762966976","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9104115,0.0029952428,0.055837456,0.00089100254,0.000059099504,0.00013549237,0.0011073968,0.0005742062,0.027988613],"genre_scores_gemma":[0.97944826,0.00089139113,0.018160556,0.000060821807,0.00001209484,0.00006650659,0.00023261811,0.000044532062,0.0010832269],"study_design_codex":"simulation_or_modeling","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99991727,0.000019374296,0.0000025151219,0.000008584052,0.000041512794,0.000010757186],"domain_scores_gemma":[0.99979764,0.00012735369,0.000017420296,0.000017186061,0.00003296523,0.000007434141],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0002631362,0.0003742199,0.00030394434,0.0002114341,0.00024743096,0.0003997899,0.00046727905,0.00058531034,0.0016431567],"category_scores_gemma":[0.0008515072,0.00017564103,0.00025551947,0.00024388354,0.00016576544,0.00069625187,0.00022288061,0.00019958103,0.00021267758],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00012300504,0.000058229612,0.0031499339,0.00036091977,0.00007074378,0.00029414715,0.000062375526,0.89823693,0.06582002,0.01504351,0.0010929971,0.015687093],"study_design_scores_gemma":[0.000015371603,0.00017685986,0.0010207312,0.000021041913,0.00002588518,0.000063326435,0.000032480173,0.97233856,0.018617827,0.004412859,0.0032630984,0.000012042089],"about_ca_topic_score_codex":0.0016272832,"about_ca_topic_score_gemma":0.002633731,"teacher_disagreement_score":0.0016431567,"about_ca_system_score_codex":0.0008675097,"about_ca_system_score_gemma":0.00050030655,"threshold_uncertainty_score":0.00629431},"labels":[],"label_agreement":null},{"id":"W2763080678","doi":"10.1109/led.2017.2759230","title":"Hybrid ZnO Core–a-Si:H Shell Infrared Photodetectors Integrated With Thin-Film Transistors","year":2017,"lang":"en","type":"article","venue":"IEEE Electron Device Letters","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":4,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Photodetector; Thin-film transistor; Infrared; Optoelectronics; Dark current; Amorphous silicon; Transistor; Materials science; Silicon; Physics; Optics; Nanotechnology; Crystalline silicon; Layer (electronics)","score_opus":0.01125988447936009,"score_gpt":0.2074923347702875,"score_spread":0.19623245029092742,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2763080678","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9815803,0.00039453508,0.015043599,0.000045396264,0.000042853484,0.00002548142,0.0003001035,0.00056403806,0.0020036553],"genre_scores_gemma":[0.98271704,0.00027859886,0.014345144,0.000025952831,0.0000096681115,0.000020964013,0.0001456574,0.000039526083,0.002417542],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999261,0.000002415107,0.000003148782,0.000025948808,0.000027150736,0.000015315112],"domain_scores_gemma":[0.9999387,0.000012265993,0.000013582709,0.000005815757,0.000016934902,0.0000126799305],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00006258337,0.0002601934,0.00025186714,0.00011512159,0.00012697873,0.00040014694,0.0005273912,0.00024161053,0.00073847675],"category_scores_gemma":[0.000105388666,0.00020842571,0.00024367156,0.00016861159,0.0001244993,0.00031349808,0.00018619292,0.00019822463,0.0002833142],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000029980587,0.000010298242,0.0001607727,0.000011634334,0.000005571822,0.000039316994,0.0000075703456,0.00013548699,0.9983291,0.000056379176,0.000047120495,0.0011667652],"study_design_scores_gemma":[0.000017743767,0.0000910076,0.0017598256,0.0000022141255,0.000016710987,0.00009264145,0.000015142785,0.005641865,0.99166155,0.00004363803,0.0006515409,0.000006227472],"about_ca_topic_score_codex":0.0016539571,"about_ca_topic_score_gemma":0.004298857,"teacher_disagreement_score":0.0016539571,"about_ca_system_score_codex":0.0003867071,"about_ca_system_score_gemma":0.0001418316,"threshold_uncertainty_score":0.0032886863},"labels":[],"label_agreement":null},{"id":"W2768962129","doi":"10.1109/led.2017.2773599","title":"PtSe<sub>2</sub> Field-Effect Transistors: New Opportunities for Electronic Devices","year":2017,"lang":"en","type":"article","venue":"IEEE Electron Device Letters","topic":"2D Materials and Applications","field":"Materials Science","cited_by":49,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Natural Sciences and Engineering Research Council of Canada; Compute Canada","keywords":"Physics; Computer science","score_opus":0.032373950154785024,"score_gpt":0.2798577324040664,"score_spread":0.2474837822492814,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2768962129","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.5615819,0.114259064,0.12991385,0.016248018,0.0017483289,0.00014374738,0.0017197535,0.0027612569,0.17162399],"genre_scores_gemma":[0.8260836,0.058361992,0.061778374,0.0018830658,0.00038185873,0.00012691987,0.0012788757,0.0002454376,0.049859848],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.999944,0.000008257596,0.0000024007472,0.000010062762,0.000023511726,0.0000118576445],"domain_scores_gemma":[0.99995244,0.000018689361,0.0000042123893,0.0000063765647,0.000008984057,0.000009393606],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00020730235,0.00027104942,0.00027301328,0.00019372342,0.0002941018,0.00082277827,0.00037896397,0.0008327656,0.006410016],"category_scores_gemma":[0.00022642617,0.00018975775,0.00017505519,0.00023615765,0.00034182076,0.0015862415,0.00039319403,0.0005823616,0.0012528492],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00035814955,0.00013727062,0.00091927534,0.0009878369,0.000037968144,0.00056952896,0.00025816404,0.0035797232,0.48607555,0.32692182,0.025371175,0.15478359],"study_design_scores_gemma":[0.0000830329,0.0005078307,0.0020158398,0.00014839176,0.000038865852,0.0014252968,0.00039653076,0.030547768,0.33626214,0.08576033,0.54275656,0.00005735735],"about_ca_topic_score_codex":0.00023257948,"about_ca_topic_score_gemma":0.00052371924,"teacher_disagreement_score":0.006410016,"about_ca_system_score_codex":0.0004106504,"about_ca_system_score_gemma":0.0002491641,"threshold_uncertainty_score":0.021443605},"labels":[],"label_agreement":null},{"id":"W2791116020","doi":"10.1109/led.2018.2799973","title":"Regular and Inverted Operating Regimes in TiN/a-Si/TiOx/TiN RRAM Devices","year":2018,"lang":"en","type":"article","venue":"IEEE Electron Device Letters","topic":"Advanced Memory and Neural Computing","field":"Engineering","cited_by":4,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"","funders":"Institute of Population and Public Health","keywords":"Tin; Materials science; Resistive random-access memory; Reliability (semiconductor); Optoelectronics; Silicon; Electrical conductor; Condensed matter physics; Voltage; Electrical engineering; Power (physics); Thermodynamics; Physics; Composite material; Engineering; Metallurgy","score_opus":0.010834063542022062,"score_gpt":0.23522852347308723,"score_spread":0.22439445993106516,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2791116020","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9974899,0.00009250345,0.00067574205,0.000037695216,0.0000063294196,0.0000052814726,0.000107499254,0.000071426875,0.0015136371],"genre_scores_gemma":[0.99958426,0.000021271679,0.00017735048,0.0000057637567,0.0000016009542,0.000003434496,0.000028527644,0.0000043833757,0.00017352425],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.999936,0.0000052060523,0.000005794283,0.000018062543,0.000017017097,0.000017874954],"domain_scores_gemma":[0.99981946,0.00006754826,0.000038321486,0.000021270129,0.000024513334,0.000028811877],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00009574248,0.00014497901,0.00012070706,0.00046458308,0.00013660426,0.00032138015,0.00030756503,0.00024851758,0.0015636248],"category_scores_gemma":[0.00032777985,0.00007519921,0.00010623449,0.00019010258,0.00035951275,0.00025860142,0.00015208697,0.00021816653,0.00017429788],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0010431354,0.00013310234,0.007896947,0.00012633379,0.000031121177,0.0009611958,0.0006917347,0.003184487,0.9658345,0.0039986707,0.00057561416,0.015523216],"study_design_scores_gemma":[0.000109543886,0.0011256912,0.059822403,0.000076060904,0.00007116861,0.0022808786,0.00080341497,0.18343733,0.7462442,0.0044362126,0.0015248465,0.000068255504],"about_ca_topic_score_codex":0.0003936737,"about_ca_topic_score_gemma":0.0005123143,"teacher_disagreement_score":0.0015636248,"about_ca_system_score_codex":0.00021218376,"about_ca_system_score_gemma":0.000076696895,"threshold_uncertainty_score":0.0052309036},"labels":[],"label_agreement":null},{"id":"W2888971549","doi":"10.1109/led.2018.2867957","title":"Device Performance Assessment of Monolayer HfSe<sub>2</sub>: A New Layered Material Compatible With High-&lt;inline-formula&gt; &lt;tex-math notation=\"LaTeX\"&gt;$\\kappa$ &lt;/tex-math&gt; &lt;/inline-formula&gt; HfO<sub>2</sub>","year":2018,"lang":"en","type":"article","venue":"IEEE Electron Device Letters","topic":"2D Materials and Applications","field":"Materials Science","cited_by":7,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Physics; Algorithm; Topology (electrical circuits); Computer science; Mathematics; Combinatorics","score_opus":0.012259443479734337,"score_gpt":0.24989980796072694,"score_spread":0.2376403644809926,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2888971549","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99544466,0.0006715128,0.0013638135,0.00012923771,0.000034797762,0.000015389252,0.00053657126,0.000061312,0.0017426797],"genre_scores_gemma":[0.99424875,0.0007181839,0.0028320143,0.000047728772,0.000013904019,0.000027031283,0.00032985632,0.000023666606,0.0017589207],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998994,0.000008256607,0.000006538836,0.00002368789,0.000036084188,0.000025979289],"domain_scores_gemma":[0.9998623,0.000033022614,0.000016188253,0.000014795949,0.000054832453,0.000018863297],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00016781043,0.000283592,0.000314283,0.0001820006,0.0002500215,0.0004993232,0.00039557894,0.0006820646,0.0017059621],"category_scores_gemma":[0.0002944814,0.000114091374,0.00018575598,0.00032507986,0.00013361404,0.0005247489,0.00020506847,0.0002502161,0.00044609906],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00027880308,0.000088785935,0.001045098,0.00023910988,0.000036132085,0.00025994494,0.00013757008,0.0021387534,0.9897008,0.0006415869,0.0009034728,0.004529944],"study_design_scores_gemma":[0.00002481288,0.000904555,0.002803936,0.000017071037,0.000034531833,0.00012464265,0.00016299282,0.014099345,0.97885615,0.00010890464,0.002836091,0.000026906064],"about_ca_topic_score_codex":0.0016852018,"about_ca_topic_score_gemma":0.0027176838,"teacher_disagreement_score":0.0017059621,"about_ca_system_score_codex":0.00026257758,"about_ca_system_score_gemma":0.00016055255,"threshold_uncertainty_score":0.0057070255},"labels":[],"label_agreement":null},{"id":"W2890702453","doi":"10.1109/led.2018.2864643","title":"Resistive nickel temperature sensor integrated into short-gate length AlGaN/GaN HEMT dedicated to RF applications","year":2018,"lang":"en","type":"article","venue":"IEEE Electron Device Letters","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":10,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Institut interdisciplinaire d'innovation technologique; Université de Sherbrooke","funders":"","keywords":"High-electron-mobility transistor; Materials science; Resistive touchscreen; Optoelectronics; Transistor; Parasitic capacitance; Radio frequency; Capacitance; Gallium nitride; Electrical engineering; Voltage; Nanotechnology; Engineering; Electrode; Layer (electronics); Chemistry","score_opus":0.009366395114636708,"score_gpt":0.26228955399475656,"score_spread":0.25292315888011985,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2890702453","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9446367,0.0013043215,0.046413902,0.00016531679,0.00012794834,0.00005303693,0.00038496038,0.0008800351,0.006033687],"genre_scores_gemma":[0.9804791,0.0002724979,0.01705572,0.000046002526,0.000030667095,0.000017604638,0.000091063215,0.000039012175,0.0019684487],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998418,0.00001163756,0.000005710489,0.00005105737,0.000072948016,0.000016779833],"domain_scores_gemma":[0.999866,0.000025888568,0.00004971556,0.00002362837,0.00002467705,0.000010091999],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000085923435,0.00026097524,0.00026628486,0.00016871082,0.00013597007,0.0003140488,0.00044469396,0.0003343892,0.00051513774],"category_scores_gemma":[0.0001795076,0.00013097758,0.00015786785,0.0001274974,0.00019728638,0.0003997049,0.00017154962,0.00021413076,0.00029048635],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000029556586,0.000005586048,0.00023717913,0.00003111938,0.000004649334,0.000054140924,0.000019063958,0.00007947015,0.99722785,0.0000926443,0.000046349523,0.0021724333],"study_design_scores_gemma":[0.0000032977616,0.00011940398,0.002576056,0.0000037504199,0.000013793979,0.0002422675,0.00001907025,0.0029763759,0.9925948,0.000051958235,0.0013917296,0.0000073849906],"about_ca_topic_score_codex":0.00022826256,"about_ca_topic_score_gemma":0.00056157506,"teacher_disagreement_score":0.00051513774,"about_ca_system_score_codex":0.00028265239,"about_ca_system_score_gemma":0.000114885595,"threshold_uncertainty_score":0.0020507574},"labels":[],"label_agreement":null},{"id":"W2917490041","doi":"10.1109/led.2019.2899878","title":"Understanding Temperature Impact on Filament-Related HfO<sub>2</sub> Solid-State Incandescent Lighting Emission Devices and Performance Enhancement Using Patterned Wafer Approaches","year":2019,"lang":"en","type":"article","venue":"IEEE Electron Device Letters","topic":"Semiconductor materials and devices","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"","funders":"Fundamental Research Funds for the Central Universities; Natural Sciences and Engineering Research Council of Canada; Natural Science Foundation of Shaanxi Province; National Natural Science Foundation of China","keywords":"Incandescent light bulb; Materials science; Optoelectronics; Light-emitting diode; Wafer; Solid-state lighting; Protein filament; Light emission; Optics; Composite material","score_opus":0.0322571647592083,"score_gpt":0.23340182126639086,"score_spread":0.20114465650718255,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2917490041","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99198127,0.0010046466,0.004664144,0.00007947489,0.000016242475,0.000011335387,0.00009464863,0.00004735906,0.0021009943],"genre_scores_gemma":[0.9972102,0.00053367467,0.0015627823,0.000026050173,0.000007960933,0.000010050364,0.00008182902,0.000013667621,0.0005536784],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99995565,0.0000033916338,0.0000018778816,0.0000110378605,0.000016011361,0.000012090297],"domain_scores_gemma":[0.99992704,0.000026862665,0.000023441744,0.0000060866464,0.000013456697,0.0000030097365],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000061654304,0.0001718889,0.00014538226,0.00005243476,0.000115268354,0.00021624654,0.00017712727,0.0002266335,0.000978984],"category_scores_gemma":[0.00012835812,0.00008899466,0.00012304327,0.00006191437,0.00016126293,0.00035024757,0.00011139669,0.00018756498,0.00018510358],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000051510655,0.000021462722,0.0006723422,0.00006308588,0.000005843541,0.00005816035,0.000024942276,0.00091931643,0.9953923,0.00018750361,0.0000657554,0.002537893],"study_design_scores_gemma":[0.0000040926293,0.00009879966,0.0043040467,0.000002951763,0.000009334715,0.000046918765,0.000039687806,0.0061376193,0.98870194,0.000089596906,0.0005608518,0.0000041272783],"about_ca_topic_score_codex":0.0005562132,"about_ca_topic_score_gemma":0.0008000714,"teacher_disagreement_score":0.000978984,"about_ca_system_score_codex":0.00022411614,"about_ca_system_score_gemma":0.00009395056,"threshold_uncertainty_score":0.0032749772},"labels":[],"label_agreement":null},{"id":"W2990680884","doi":"10.1109/led.2019.2956346","title":"Fabrication and Modeling of pn-Diodes Based on Inkjet Printed Oxide Semiconductors","year":2019,"lang":"en","type":"article","venue":"IEEE Electron Device Letters","topic":"ZnO doping and properties","field":"Materials Science","cited_by":9,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Materials science; Diode; Optoelectronics; Semiconductor; Oxide; Microelectronics; Thin-film transistor; Transistor; Nanotechnology; Electrical engineering; Voltage; Layer (electronics); Metallurgy","score_opus":0.022321025270295527,"score_gpt":0.24435927349780864,"score_spread":0.2220382482275131,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2990680884","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.1919167,0.0013714305,0.74467635,0.00031127315,0.00021271019,0.0002817833,0.0019462932,0.0014422749,0.057841215],"genre_scores_gemma":[0.84736717,0.0017949241,0.12820706,0.00009000531,0.0000264222,0.0003624738,0.00062746974,0.00014963045,0.021374814],"study_design_codex":"simulation_or_modeling","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998833,0.000008782594,0.000004430432,0.000024736431,0.000065632674,0.0000130758835],"domain_scores_gemma":[0.99990654,0.000031783064,0.000016159493,0.000015094874,0.000025625652,0.000004739867],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00010123086,0.00035756445,0.0003712387,0.00018408589,0.00022061185,0.00052614074,0.0011699927,0.0007108709,0.0021119597],"category_scores_gemma":[0.0003052654,0.0002866157,0.00050663785,0.0003487673,0.0002411176,0.0005957854,0.0002012268,0.00042450507,0.0006266563],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000044005832,0.00006495359,0.00071852485,0.0002460978,0.000028464428,0.0003666857,0.00009268429,0.8661831,0.10644638,0.015334597,0.0007422222,0.009732318],"study_design_scores_gemma":[0.0000065790537,0.000028478691,0.00027204677,0.000010646969,0.000007826623,0.00006847599,0.000009917112,0.97317433,0.0215235,0.0013556391,0.0035337599,0.000008880168],"about_ca_topic_score_codex":0.003325453,"about_ca_topic_score_gemma":0.0023047666,"teacher_disagreement_score":0.003325453,"about_ca_system_score_codex":0.00082360505,"about_ca_system_score_gemma":0.0005879796,"threshold_uncertainty_score":0.0070652366},"labels":[],"label_agreement":null},{"id":"W2998474445","doi":"10.1109/led.2019.2963299","title":"A TCAD Study on Lateral Power MOSFET With Dual Conduction Paths and High-$k$ Passivation","year":2019,"lang":"en","type":"article","venue":"IEEE Electron Device Letters","topic":"Silicon Carbide Semiconductor Technologies","field":"Engineering","cited_by":18,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Toronto","funders":"China Scholarship Council; National Natural Science Foundation of China","keywords":"Passivation; MOSFET; Materials science; Field-effect transistor; Thermal conduction; CMOS; Electrical engineering; Transistor; Optoelectronics; Topology (electrical circuits); Voltage; Layer (electronics); Nanotechnology; Engineering","score_opus":0.0067853248228763145,"score_gpt":0.20359244133969015,"score_spread":0.19680711651681385,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2998474445","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9069698,0.0032790236,0.06664753,0.0006468589,0.00011557803,0.000056902492,0.0005113414,0.0004624135,0.021310465],"genre_scores_gemma":[0.98105973,0.0008620403,0.015656773,0.00005368477,0.0000152663,0.000036093985,0.00013460258,0.00001930653,0.0021624332],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99995434,0.0000070741376,0.00000190485,0.000005452418,0.000023351815,0.000007832769],"domain_scores_gemma":[0.99991465,0.00003221611,0.000012466688,0.0000083839495,0.000028015264,0.000004183494],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00009414203,0.00017873819,0.00025716453,0.00013872817,0.00015117868,0.00029528321,0.00046099973,0.00030557113,0.0012401461],"category_scores_gemma":[0.000278901,0.00014741588,0.00029026682,0.00032615985,0.00015139044,0.0004714603,0.000081813385,0.0001294411,0.00019648198],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00038494804,0.00011182131,0.0071620266,0.0014014766,0.00021456418,0.0018104399,0.00035142712,0.7051502,0.1861814,0.0399302,0.0065831505,0.050718367],"study_design_scores_gemma":[0.000053371088,0.00023458456,0.0020218836,0.000038794202,0.000060040893,0.00021222436,0.000057251007,0.9709191,0.01814289,0.0020111834,0.0062311967,0.000017409044],"about_ca_topic_score_codex":0.0032884923,"about_ca_topic_score_gemma":0.0058426135,"teacher_disagreement_score":0.0032884923,"about_ca_system_score_codex":0.0005440214,"about_ca_system_score_gemma":0.0005246321,"threshold_uncertainty_score":0.006538689},"labels":[],"label_agreement":null},{"id":"W3109465603","doi":"10.1109/led.2020.3041222","title":"SnO<sub>X</sub>-Based <i>μ</i> W-Power Dual-Gate Ion-Sensitive Thin-Film Transistors With Linear Dependence of pH Values on Drain Current","year":2020,"lang":"en","type":"article","venue":"IEEE Electron Device Letters","topic":"Analytical Chemistry and Sensors","field":"Chemical Engineering","cited_by":3,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"","funders":"Natural Sciences and Engineering Research Council of Canada; National Key Research and Development Program of China; Engineering and Physical Sciences Research Council; Natural Science Foundation of Shandong Province; Shenzhen Fundamental Research Program; Shandong University","keywords":"Transistor; Analytical Chemistry (journal); Electrical engineering; Materials science; Optoelectronics; Topology (electrical circuits); Physics; Chemistry; Voltage; Organic chemistry","score_opus":0.010597305905258486,"score_gpt":0.2201675905947965,"score_spread":0.209570284689538,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3109465603","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9568048,0.0007850254,0.029585434,0.00015582322,0.0001419963,0.00017192042,0.0011002304,0.0008041121,0.010450637],"genre_scores_gemma":[0.9397059,0.0010612246,0.039755397,0.00016826937,0.00003250873,0.00012174329,0.0008369873,0.000088315406,0.018229619],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999267,0.0000036273195,0.0000047518297,0.000027327034,0.00002444317,0.000013159595],"domain_scores_gemma":[0.9998431,0.000025805253,0.000042562795,0.00001704124,0.00004751086,0.000023945344],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0001540747,0.00033078823,0.00021010374,0.00013972611,0.00009805283,0.00034573424,0.000779976,0.00028887924,0.0013107917],"category_scores_gemma":[0.00022165486,0.0002122912,0.00018912158,0.0001871896,0.00019481036,0.00047782902,0.00016211582,0.00031339974,0.000648989],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000058456862,0.00001736491,0.00020645003,0.00004715948,0.00000935713,0.000044901764,0.000027418831,0.00006450568,0.9964953,0.00019056341,0.00024081847,0.0025976952],"study_design_scores_gemma":[0.000010094328,0.00013874681,0.0010571288,0.0000035526598,0.00002044436,0.00009691188,0.000021519929,0.0013374898,0.9956469,0.000042027186,0.0016207313,0.0000044962626],"about_ca_topic_score_codex":0.0008502006,"about_ca_topic_score_gemma":0.0023626552,"teacher_disagreement_score":0.0013107917,"about_ca_system_score_codex":0.00029183156,"about_ca_system_score_gemma":0.00019467367,"threshold_uncertainty_score":0.004385054},"labels":[],"label_agreement":null},{"id":"W3119528490","doi":"10.1109/led.2021.3050981","title":"Body-Biased Multiple-Gate Micro-Electro-Mechanical Relays","year":2021,"lang":"en","type":"article","venue":"IEEE Electron Device Letters","topic":"Advanced MEMS and NEMS Technologies","field":"Engineering","cited_by":3,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"","funders":"Natural Sciences and Engineering Research Council of Canada; National Science Foundation","keywords":"Voltage; Relay; Electrical engineering; Electronic circuit; Limit (mathematics); Logic gate; Voltage divider; Hysteresis; Biasing; SIGNAL (programming language); Materials science; Physics; Topology (electrical circuits); Engineering; Computer science; Mathematics; Power (physics); Condensed matter physics","score_opus":0.008194350940692314,"score_gpt":0.21613074949463126,"score_spread":0.20793639855393894,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3119528490","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.964975,0.0008325897,0.029854583,0.00016226088,0.00011319979,0.00004879065,0.00012456563,0.00030350135,0.0035854874],"genre_scores_gemma":[0.9819198,0.00022604545,0.015876962,0.000034386147,0.00001220106,0.000024128558,0.00004874456,0.000020237912,0.001837543],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998301,0.000017114471,0.000011568387,0.00005237283,0.00006371284,0.00002507389],"domain_scores_gemma":[0.9997236,0.000059018403,0.000096089665,0.00004731032,0.000055038956,0.000018924407],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00014258773,0.00034598107,0.00036869702,0.00015579551,0.00012348368,0.0003973006,0.0008488302,0.0005140209,0.00094411423],"category_scores_gemma":[0.00044549545,0.00015757112,0.00013288067,0.00017363385,0.00030757295,0.000555539,0.0002888162,0.00028969234,0.00036300858],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00008010004,0.000014798435,0.000119764765,0.00006234677,0.0000070336314,0.00010540084,0.00003205492,0.00048277935,0.9948271,0.00071713317,0.000111054855,0.0034404488],"study_design_scores_gemma":[0.000016688706,0.0002683314,0.0005265208,0.000005876326,0.000009871035,0.00021533764,0.000023186065,0.00662998,0.9897776,0.00018711018,0.0023306725,0.000008778536],"about_ca_topic_score_codex":0.0001521019,"about_ca_topic_score_gemma":0.00033921024,"teacher_disagreement_score":0.00094411423,"about_ca_system_score_codex":0.00026934044,"about_ca_system_score_gemma":0.00014362083,"threshold_uncertainty_score":0.003158331},"labels":[],"label_agreement":null},{"id":"W3154062942","doi":"10.1109/led.2021.3072000","title":"Low-Frequency Noise Characteristics of Inkjet-Printed Electrolyte-Gated Thin-Film Transistors","year":2021,"lang":"en","type":"article","venue":"IEEE Electron Device Letters","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":3,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Ministerium für Wissenschaft, Forschung und Kunst Baden-Württemberg; Bundesministerium für Bildung und Forschung","keywords":"Transistor; Materials science; Thin-film transistor; Noise (video); Optoelectronics; Flicker noise; Capacitance; Gate dielectric; Electrical engineering; Nanotechnology; Voltage; Noise figure; Computer science; Electrode; Layer (electronics); Physics; CMOS; Engineering","score_opus":0.006465278390795418,"score_gpt":0.19689976852289473,"score_spread":0.19043449013209932,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3154062942","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9885028,0.00084574096,0.00842817,0.00007941493,0.000056303204,0.000012864496,0.0002760028,0.00022595307,0.0015726415],"genre_scores_gemma":[0.99632806,0.0002543305,0.0021280975,0.000029015926,0.0000117299805,0.000010054678,0.0001243837,0.000024386789,0.0010899024],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99972206,0.000017208687,0.000015731546,0.000063008505,0.00015768818,0.000024260504],"domain_scores_gemma":[0.9995165,0.00024631037,0.00008122988,0.00003483978,0.00010289642,0.00001813514],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00013956419,0.00023953241,0.00026643087,0.00039056755,0.00012187776,0.0003376398,0.00041337995,0.0004427267,0.0008488573],"category_scores_gemma":[0.0008099661,0.00010486078,0.0001630965,0.00039555389,0.00026364296,0.0002872586,0.00010356406,0.00023078381,0.00023268661],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00013597657,0.00002726933,0.0014606622,0.000076798926,0.00002079045,0.00037601127,0.00011902862,0.002349048,0.98853123,0.00019121678,0.000119779485,0.0065921713],"study_design_scores_gemma":[0.000014897103,0.00031351444,0.00923912,0.00002386142,0.000033752265,0.00045996348,0.00008793614,0.033171438,0.95528656,0.00026310704,0.0010795415,0.000026362457],"about_ca_topic_score_codex":0.00044373845,"about_ca_topic_score_gemma":0.0004710444,"teacher_disagreement_score":0.0008488573,"about_ca_system_score_codex":0.00027456746,"about_ca_system_score_gemma":0.00008183898,"threshold_uncertainty_score":0.002839744},"labels":[],"label_agreement":null},{"id":"W3157071661","doi":"10.1109/led.2021.3076047","title":"Non-Volatile Multiport DC–30 GHz Monolithically Integrated Phase-Change Transfer Switches","year":2021,"lang":"en","type":"article","venue":"IEEE Electron Device Letters","topic":"Phase-change materials and chalcogenides","field":"Materials Science","cited_by":18,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Electrical engineering; Switching time; Flexibility (engineering); Transfer (computing); Routing (electronic design automation); Computer science; Microwave; Topology (electrical circuits); Electronic engineering; Materials science; Engineering; Embedded system; Telecommunications","score_opus":0.037975838188272916,"score_gpt":0.284879759260543,"score_spread":0.24690392107227008,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3157071661","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.91261774,0.0017049477,0.069341734,0.00020036624,0.0001528927,0.00008536998,0.00029507795,0.0012753312,0.01432658],"genre_scores_gemma":[0.9753318,0.00028557688,0.019793155,0.00007817899,0.000041047468,0.000035429835,0.00016974805,0.000040268897,0.0042248843],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9997702,0.00002480975,0.000010003303,0.00006317677,0.00009405433,0.0000377731],"domain_scores_gemma":[0.9998745,0.000031820684,0.000031266398,0.000034718898,0.00001478868,0.00001291493],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00015183845,0.0002593209,0.00020588998,0.00018318868,0.00015663622,0.0004434642,0.00075685896,0.00034491354,0.0019778523],"category_scores_gemma":[0.00020088191,0.0001480176,0.00020380632,0.0002077115,0.0002432586,0.0006147994,0.00034511482,0.00034326318,0.00041269188],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00016420575,0.000047649894,0.00048595332,0.000062348,0.000013314747,0.00014599845,0.00006506512,0.0005409834,0.9722258,0.0014629938,0.00043631028,0.024349414],"study_design_scores_gemma":[0.00003111397,0.00038620466,0.0024228613,0.000004737425,0.000020132338,0.0010050524,0.000033538206,0.003586343,0.98335797,0.0002170584,0.008914773,0.000020226424],"about_ca_topic_score_codex":0.000112522575,"about_ca_topic_score_gemma":0.00025498672,"teacher_disagreement_score":0.0019778523,"about_ca_system_score_codex":0.00023250697,"about_ca_system_score_gemma":0.00010187289,"threshold_uncertainty_score":0.0066165924},"labels":[],"label_agreement":null},{"id":"W3160365192","doi":"10.1109/led.2021.3079244","title":"Trap Recovery by in-Situ Annealing in Fully-Depleted MOSFET With Active Silicide Resistor","year":2021,"lang":"en","type":"article","venue":"IEEE Electron Device Letters","topic":"Semiconductor materials and devices","field":"Engineering","cited_by":11,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Institut interdisciplinaire d'innovation technologique; Université de Sherbrooke","funders":"","keywords":"Materials science; Annealing (glass); MOSFET; Transconductance; Optoelectronics; Silicide; Transistor; CMOS; Resistor; Silicon on insulator; Electrical engineering; Electronic engineering; Silicon; Engineering; Metallurgy; Voltage","score_opus":0.006661984456827874,"score_gpt":0.20178021788970374,"score_spread":0.19511823343287588,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3160365192","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99804556,0.00024982195,0.0012033479,0.000025356267,0.00001234908,0.00000508734,0.00006389061,0.000056389083,0.00033813802],"genre_scores_gemma":[0.99865997,0.00008106381,0.00064780365,0.0000058394226,0.0000033118329,0.000003828418,0.000048650745,0.000014156148,0.00053534016],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99992216,0.0000064734627,0.0000048343727,0.000020957124,0.000025437397,0.000020177731],"domain_scores_gemma":[0.99988985,0.000025441961,0.00003140399,0.000025594574,0.000018838107,0.000008960821],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00008131304,0.00022902188,0.00026096829,0.00010220079,0.000100656776,0.00020193045,0.00040132794,0.00019125143,0.00090996845],"category_scores_gemma":[0.00019215548,0.00013759309,0.00018117418,0.00010069278,0.00018712677,0.00024685907,0.00014601537,0.00016556024,0.00017195346],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00006985772,0.000014864124,0.00016391123,0.000041075193,0.000009006592,0.00007232706,0.000038143717,0.00034955223,0.99821544,0.000037394107,0.00003831953,0.00095013663],"study_design_scores_gemma":[0.0000093196795,0.00023744014,0.00196217,0.0000039417214,0.000015565654,0.000093635426,0.000029492621,0.0038903633,0.9932569,0.00003126041,0.00046462173,0.0000052556807],"about_ca_topic_score_codex":0.00037967818,"about_ca_topic_score_gemma":0.0008516277,"teacher_disagreement_score":0.00090996845,"about_ca_system_score_codex":0.00013688445,"about_ca_system_score_gemma":0.00008281923,"threshold_uncertainty_score":0.0030441284},"labels":[],"label_agreement":null},{"id":"W4206650916","doi":"10.1109/led.2021.3132964","title":"Random Telegraph Noise of a 28-nm Cryogenic MOSFET in the Coulomb Blockade Regime","year":2021,"lang":"en","type":"article","venue":"IEEE Electron Device Letters","topic":"Semiconductor materials and devices","field":"Engineering","cited_by":22,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Ontario Ministry of Research and Innovation; Canada First Research Excellence Fund; Industry Canada","keywords":"Coulomb blockade; PMOS logic; Physics; MOSFET; Noise (video); Transconductance; Condensed matter physics; Quantum dot; Electrical engineering; Optoelectronics; Materials science; Voltage; Transistor; Quantum mechanics; Engineering","score_opus":0.008447984429325631,"score_gpt":0.21582912745609056,"score_spread":0.20738114302676494,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4206650916","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9983506,0.000026014532,0.0007772044,0.000060169747,0.00000392736,0.000003334296,0.000053364765,0.000047493533,0.00067792746],"genre_scores_gemma":[0.9996182,0.000009844268,0.00017357816,0.000007796901,0.0000019478969,0.0000022612014,0.00001860712,0.0000042849256,0.00016346562],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999285,0.000008331349,0.0000020571406,0.000018102139,0.00002620834,0.00001680339],"domain_scores_gemma":[0.99981576,0.00008550188,0.00003129711,0.000015975384,0.000027263795,0.000024160028],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00011171923,0.00015416098,0.0001720865,0.000151183,0.00015788079,0.00016221401,0.0003039875,0.0001970238,0.00087699183],"category_scores_gemma":[0.00033738193,0.0000619975,0.0000791514,0.00012137361,0.0003316749,0.0002039916,0.0001113542,0.00020509018,0.00008354143],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00050801825,0.00012703086,0.0068845246,0.00006971904,0.0000308672,0.0010629363,0.0004268704,0.01102973,0.9725891,0.0023155648,0.0006119049,0.004343692],"study_design_scores_gemma":[0.000073088915,0.0012837473,0.03775277,0.000031488107,0.00004876532,0.0008678965,0.00038547843,0.3862519,0.5701103,0.0016115954,0.0015210574,0.00006197322],"about_ca_topic_score_codex":0.0017631624,"about_ca_topic_score_gemma":0.0019363692,"teacher_disagreement_score":0.0017631624,"about_ca_system_score_codex":0.0004537574,"about_ca_system_score_gemma":0.00014954922,"threshold_uncertainty_score":0.003505826},"labels":[],"label_agreement":null},{"id":"W4241584344","doi":"10.1109/led.2014.2341120","title":"IEEE Electron Device Letters publication information","year":2014,"lang":"en","type":"article","venue":"IEEE Electron Device Letters","topic":"Energy Harvesting in Wireless Networks","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":false,"route_ca_aff":false,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"","funders":"Samsung; Connaught Fund; Purdue University; Keio University; Intel Corporation","keywords":"Computer science; Electron; Electrical engineering; Optoelectronics; Materials science; Physics; Engineering; Nuclear physics","score_opus":0.005604524340488807,"score_gpt":0.19864215609877373,"score_spread":0.19303763175828492,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4241584344","genre_codex":"other","genre_gemma":"other","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"other","genre_consensus":"other","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.011864356,0.0096933795,0.0166676,0.029838432,0.07406682,0.00060996047,0.010929315,0.0028556336,0.84347445],"genre_scores_gemma":[0.03449515,0.0061945096,0.004218622,0.003605563,0.0043715006,0.0002071021,0.008587947,0.00057113013,0.93774843],"study_design_codex":"not_applicable","study_design_gemma":"not_applicable","domain_scores_codex":[0.99959046,0.00003536844,0.000028500277,0.0000769967,0.00019087514,0.00007782916],"domain_scores_gemma":[0.999376,0.0001367871,0.0000394372,0.00012229462,0.0002301259,0.00009538894],"candidate_categories":["insufficient_payload"],"consensus_categories":[],"category_scores_codex":[0.000591188,0.0008269102,0.00097550056,0.0016774876,0.0010400183,0.00295335,0.0010990902,0.0029132504,0.35937],"category_scores_gemma":[0.0013158082,0.0004883945,0.00057396555,0.0012909127,0.00042353437,0.0020969464,0.0009459448,0.0019059223,0.14782286],"study_design_candidate":"not_applicable","study_design_consensus":"not_applicable","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00027909467,0.0002269924,0.0003087635,0.0004787936,0.000035987927,0.00019163429,0.00004842834,0.00040855652,0.010458706,0.012721133,0.8685214,0.10632041],"study_design_scores_gemma":[0.00004315619,0.000110325906,0.0012014796,0.00015763071,0.000020181387,0.00023709076,0.000040202976,0.0023844787,0.0074859844,0.005167322,0.9831185,0.000033617387],"about_ca_topic_score_codex":0.00054033264,"about_ca_topic_score_gemma":0.001572412,"teacher_disagreement_score":0.35937,"about_ca_system_score_codex":0.00092050526,"about_ca_system_score_gemma":0.000826545,"threshold_uncertainty_score":0.9137809},"labels":[],"label_agreement":null},{"id":"W4247364694","doi":"10.1109/led.2014.2348755","title":"IEEE Electron Device Letters publication information","year":2014,"lang":"en","type":"article","venue":"IEEE Electron Device Letters","topic":"Energy Harvesting in Wireless Networks","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":false,"route_ca_aff":false,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"","funders":"Samsung; Connaught Fund; Purdue University; Keio University; Intel Corporation","keywords":"Computer science; Electrical engineering; Electron; Optoelectronics; Materials science; Physics; Engineering; Nuclear physics","score_opus":0.005604524340488807,"score_gpt":0.19864215609877373,"score_spread":0.19303763175828492,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4247364694","genre_codex":"other","genre_gemma":"other","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"other","genre_consensus":"other","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.011864356,0.0096933795,0.0166676,0.029838432,0.07406682,0.00060996047,0.010929315,0.0028556336,0.84347445],"genre_scores_gemma":[0.03449515,0.0061945096,0.004218622,0.003605563,0.0043715006,0.0002071021,0.008587947,0.00057113013,0.93774843],"study_design_codex":"not_applicable","study_design_gemma":"not_applicable","domain_scores_codex":[0.99959046,0.00003536844,0.000028500277,0.0000769967,0.00019087514,0.00007782916],"domain_scores_gemma":[0.999376,0.0001367871,0.0000394372,0.00012229462,0.0002301259,0.00009538894],"candidate_categories":["insufficient_payload"],"consensus_categories":["insufficient_payload"],"category_scores_codex":[0.000591188,0.0008269102,0.00097550056,0.0016774876,0.0010400183,0.00295335,0.0010990902,0.0029132504,0.35937],"category_scores_gemma":[0.0013158082,0.0004883945,0.00057396555,0.0012909127,0.00042353437,0.0020969464,0.0009459448,0.0019059223,0.14782286],"study_design_candidate":"not_applicable","study_design_consensus":"not_applicable","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00027909467,0.0002269924,0.0003087635,0.0004787936,0.000035987927,0.00019163429,0.00004842834,0.00040855652,0.010458706,0.012721133,0.8685214,0.10632041],"study_design_scores_gemma":[0.00004315619,0.000110325906,0.0012014796,0.00015763071,0.000020181387,0.00023709076,0.000040202976,0.0023844787,0.0074859844,0.005167322,0.9831185,0.000033617387],"about_ca_topic_score_codex":0.00054033264,"about_ca_topic_score_gemma":0.001572412,"teacher_disagreement_score":0.64063,"about_ca_system_score_codex":0.00092050526,"about_ca_system_score_gemma":0.000826545,"threshold_uncertainty_score":0.9137809},"labels":[],"label_agreement":null},{"id":"W4285294600","doi":"10.1109/led.2022.3179228","title":"Mitigating Tunneling Leakage in Ultrascaled HfS<sub>2</sub> pMOS Devices With Uniaxial Strain","year":2022,"lang":"en","type":"article","venue":"IEEE Electron Device Letters","topic":"Ferroelectric and Negative Capacitance Devices","field":"Engineering","cited_by":3,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Natural Sciences and Engineering Research Council of Canada; Ontario Ministry of Research, Innovation and Science","keywords":"PMOS logic; NMOS logic; Quantum tunnelling; Strain engineering; CMOS; Effective mass (spring–mass system); Physics; Degenerate energy levels; Materials science; Subthreshold conduction; Electrical engineering; Topology (electrical circuits); Condensed matter physics; Optoelectronics; Transistor; Engineering; Quantum mechanics; Voltage; Silicon","score_opus":0.006263858964175043,"score_gpt":0.18891165732990584,"score_spread":0.18264779836573078,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4285294600","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99808985,0.00016331939,0.00096397736,0.000048587553,0.000016045075,0.000004442238,0.000079510006,0.00007664311,0.0005575153],"genre_scores_gemma":[0.9986222,0.000084365274,0.00089913484,0.0000169415,0.000007112996,0.000007634487,0.00004366494,0.000010178069,0.00030873073],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999521,0.000003741566,0.0000034022962,0.000007949349,0.000015327405,0.000017427075],"domain_scores_gemma":[0.9999037,0.000019100024,0.000038236554,0.000009387684,0.000017659026,0.00001189182],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00009909885,0.0002792136,0.00027005657,0.00012321092,0.00021707678,0.0002615534,0.000421591,0.00025348604,0.0008886733],"category_scores_gemma":[0.00017177749,0.00011265764,0.00015276382,0.00022586963,0.00015112247,0.00053150306,0.00015437427,0.00012931884,0.00011730517],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0004882524,0.0001871016,0.003382976,0.00018730672,0.00006811039,0.00036403313,0.00013809459,0.03110022,0.9495278,0.001319793,0.0010263709,0.012210003],"study_design_scores_gemma":[0.000097824835,0.001274086,0.009333519,0.000030987954,0.000097184144,0.00020829093,0.00015672145,0.20501971,0.78080297,0.0006354014,0.0022981572,0.000045215522],"about_ca_topic_score_codex":0.002053593,"about_ca_topic_score_gemma":0.004635105,"teacher_disagreement_score":0.002053593,"about_ca_system_score_codex":0.00054250314,"about_ca_system_score_gemma":0.00025039245,"threshold_uncertainty_score":0.0040833354},"labels":[],"label_agreement":null},{"id":"W4297310199","doi":"10.1109/led.2022.3210005","title":"A Gate-All-Around inO Nanoribbon FET With Near 20 mA/m Drain Current<sub/> <sub/> <sub/>","year":2022,"lang":"en","type":"article","venue":"IEEE Electron Device Letters","topic":"Semiconductor materials and devices","field":"Engineering","cited_by":36,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Dalhousie University","funders":"Natural Sciences and Engineering Research Council of Canada; Compute Canada; Air Force Office of Scientific Research; Semiconductor Research Corporation","keywords":"Materials science; Optoelectronics; Indium; Gate oxide; Oxide; Semiconductor; Current (fluid); Dielectric; MOSFET; Gate dielectric; Gallium arsenide; Layer (electronics); Atomic layer deposition; Nanotechnology; Electrical engineering; Transistor; Voltage","score_opus":0.00974852919908122,"score_gpt":0.21108554415461145,"score_spread":0.20133701495553022,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4297310199","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.98060685,0.00059030805,0.0105208205,0.00023125991,0.00010850704,0.0000290398,0.0007869509,0.00078956626,0.006336794],"genre_scores_gemma":[0.9805037,0.0002512388,0.015941188,0.00006364784,0.000014065498,0.00001926817,0.00020968016,0.00006365501,0.0029337013],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99996376,0.0000024128406,0.0000018535104,0.000012425151,0.000010957159,0.000008505698],"domain_scores_gemma":[0.9999362,0.000015595486,0.000011606381,0.000008897869,0.000016214464,0.00001148902],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000048663045,0.00021129001,0.0002391577,0.000093560055,0.0002229663,0.0003165235,0.00037398434,0.00038318255,0.0010910555],"category_scores_gemma":[0.00010771132,0.00007299982,0.00016506985,0.00015887766,0.00012563678,0.00034515845,0.00012121954,0.0001628828,0.0005370519],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00003118314,0.000010391233,0.00018467428,0.000032896503,0.00000423154,0.00017226495,0.000019902624,0.00011397544,0.99775416,0.00018957042,0.00016696635,0.0013196983],"study_design_scores_gemma":[0.000011543656,0.00015653018,0.0021645122,0.000006105811,0.000017893373,0.00037233345,0.00004096393,0.0031651256,0.99072194,0.00015391909,0.003176388,0.000012647866],"about_ca_topic_score_codex":0.0010142506,"about_ca_topic_score_gemma":0.0035649322,"teacher_disagreement_score":0.0010910555,"about_ca_system_score_codex":0.00026420483,"about_ca_system_score_gemma":0.00013476667,"threshold_uncertainty_score":0.00364995},"labels":[],"label_agreement":null},{"id":"W4312051238","doi":"10.1109/led.2022.3217319","title":"Fast-Response Amorphous In<sub>2</sub>Te<sub>3</sub> Short-Wave Infrared (SWIR) Photodetector","year":2022,"lang":"en","type":"article","venue":"IEEE Electron Device Letters","topic":"Advanced Semiconductor Detectors and Materials","field":"Engineering","cited_by":4,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"","funders":"York University; New York University Abu Dhabi","keywords":"Specific detectivity; Photodetector; Responsivity; Materials science; Optoelectronics; Infrared; Photodiode; Amorphous solid; Optics; Amorphous silicon; Silicon; Physics; Chemistry; Crystalline silicon","score_opus":0.010273388935586268,"score_gpt":0.2064131171172075,"score_spread":0.19613972818162123,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4312051238","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.98559326,0.0005497029,0.008793292,0.00007400896,0.000044216373,0.000016068618,0.00048597605,0.00024730613,0.004196195],"genre_scores_gemma":[0.9896785,0.00038765138,0.005859229,0.00004467454,0.000008180301,0.000011760585,0.0002545458,0.000034248842,0.0037213308],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999484,0.000005303692,0.0000030524554,0.000016237951,0.00001740326,0.000009583426],"domain_scores_gemma":[0.9999312,0.000017170612,0.0000213156,0.000008165304,0.000015403706,0.0000067361493],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00006548843,0.00019414464,0.00014868188,0.00011004937,0.00010352881,0.00026853636,0.00028269336,0.00018325559,0.0016078524],"category_scores_gemma":[0.00010074993,0.00010353266,0.0001004855,0.00017446581,0.000111255395,0.000187923,0.00009492503,0.00016195205,0.00036191457],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000037833444,0.000006612742,0.00026720468,0.000031208172,0.0000053277254,0.000055390414,0.000013670711,0.000077764555,0.99768686,0.00012122841,0.00020441704,0.00149254],"study_design_scores_gemma":[0.0000063421844,0.000054980155,0.0025757318,0.0000032901596,0.000007955116,0.00013310599,0.000025906447,0.001668289,0.99332786,0.000035434507,0.002156861,0.0000042241695],"about_ca_topic_score_codex":0.00035236133,"about_ca_topic_score_gemma":0.0009844899,"teacher_disagreement_score":0.0016078524,"about_ca_system_score_codex":0.00020619725,"about_ca_system_score_gemma":0.00007819503,"threshold_uncertainty_score":0.0053788424},"labels":[],"label_agreement":null},{"id":"W4384519180","doi":"10.1109/led.2023.3296332","title":"A Low-Temperature Processed Organic Hole-Blocking Contact Layer for Amorphous Selenium X-Ray Photoconductor","year":2023,"lang":"en","type":"article","venue":"IEEE Electron Device Letters","topic":"Digital Radiography and Breast Imaging","field":"Medicine","cited_by":2,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Electroluminescence; X-ray detector; Amorphous solid; Materials science; Analytical Chemistry (journal); Optoelectronics; Layer (electronics); Physics; Detector; Optics; Chemistry; Nanotechnology; Crystallography; Organic chemistry","score_opus":0.014163870354150938,"score_gpt":0.26390196553321493,"score_spread":0.249738095179064,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4384519180","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.98396194,0.00060410576,0.011714693,0.00009834345,0.0000874971,0.0000579266,0.0004301026,0.000478293,0.002567125],"genre_scores_gemma":[0.982679,0.00027577943,0.01308753,0.00004538895,0.00001285976,0.000043401276,0.0001582747,0.000038233946,0.003659426],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999014,0.0000041042963,0.000005286905,0.000036922327,0.000034590612,0.000017730992],"domain_scores_gemma":[0.9999106,0.000019070434,0.00002355904,0.000016313394,0.000022439603,0.0000079806705],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000057868172,0.00025386215,0.00016049731,0.000115484865,0.00016336498,0.00025678452,0.00053865934,0.0003059186,0.0013964163],"category_scores_gemma":[0.00016385093,0.00012837918,0.00013791266,0.00013761802,0.00009814572,0.00024366229,0.00016196672,0.00024729865,0.0005184006],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000013791281,0.00000888687,0.00012592634,0.000026687208,0.0000021491157,0.00006846646,0.000012087595,0.000054764336,0.9980299,0.000093909955,0.000101801495,0.0014615896],"study_design_scores_gemma":[0.000003736285,0.00006224874,0.0008087584,0.0000029185064,0.0000043940054,0.000096536205,0.000010230818,0.0013365237,0.99602604,0.00001451179,0.0016305336,0.000003669222],"about_ca_topic_score_codex":0.00063354435,"about_ca_topic_score_gemma":0.0012119977,"teacher_disagreement_score":0.0013964163,"about_ca_system_score_codex":0.0003172032,"about_ca_system_score_gemma":0.00017710109,"threshold_uncertainty_score":0.0046714544},"labels":[],"label_agreement":null},{"id":"W4392638769","doi":"10.1109/led.2024.3375800","title":"Bragg-Spaced Quantum-Well Nanorod In-Plane Lasers on Silicon","year":2024,"lang":"en","type":"article","venue":"IEEE Electron Device Letters","topic":"Nanowire Synthesis and Applications","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McGill University; University of Waterloo","funders":"","keywords":"Optoelectronics; Laser; Silicon; Quantum well; Nanorod; Materials science; Semiconductor laser theory; Quantum dot laser; Optics; Hybrid silicon laser; Semiconductor; Physics; Nanotechnology","score_opus":0.006633144689323833,"score_gpt":0.221245305530632,"score_spread":0.21461216084130819,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4392638769","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.8638184,0.0002983641,0.100046,0.0002744659,0.000056752346,0.0000643449,0.0006932107,0.00031857507,0.03442994],"genre_scores_gemma":[0.94496816,0.00032665615,0.04961084,0.00005552521,0.0000095512405,0.00009807641,0.00023619458,0.00007337567,0.0046215425],"study_design_codex":"simulation_or_modeling","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99993384,0.000008330249,0.0000028151042,0.000010517154,0.000026971507,0.00001751037],"domain_scores_gemma":[0.9999201,0.000028489916,0.000018610077,0.000009950015,0.000016235605,0.000006670333],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00009043859,0.00023402601,0.00030879906,0.00011089781,0.0002581132,0.00043474176,0.000434511,0.00040164412,0.0023744928],"category_scores_gemma":[0.00019193393,0.00030644957,0.00028504714,0.00017346043,0.0001633111,0.00029134197,0.00016941366,0.00019080097,0.00045953057],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000079669946,0.00008004785,0.0013739521,0.00017340867,0.000055402543,0.00014594915,0.0000555394,0.8867372,0.09792208,0.008588229,0.0005578175,0.0042306664],"study_design_scores_gemma":[0.00004668491,0.00007740567,0.00046732486,0.000009575618,0.000015556405,0.00003137605,0.000029441753,0.9693879,0.027596561,0.0012008449,0.0011214191,0.000015797481],"about_ca_topic_score_codex":0.0039284695,"about_ca_topic_score_gemma":0.0069515565,"teacher_disagreement_score":0.0039284695,"about_ca_system_score_codex":0.0005446315,"about_ca_system_score_gemma":0.00066811056,"threshold_uncertainty_score":0.007943511},"labels":[],"label_agreement":null},{"id":"W4401070506","doi":"10.1109/led.2024.3435380","title":"Investigation of <i>p</i>- and <i>n</i>-Type Quantum Dot Arrays Manufactured in 22-nm FDSOI CMOS at 2–4 K and 300 K","year":2024,"lang":"en","type":"article","venue":"IEEE Electron Device Letters","topic":"Semiconductor materials and devices","field":"Engineering","cited_by":6,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Toronto","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Quantum dot; Optoelectronics; Gate voltage; CMOS; Materials science; Scaling; Silicon on insulator; Threshold voltage; Coupling (piping); Coulomb blockade; Voltage; Condensed matter physics; Physics; Silicon; Transistor; Quantum mechanics","score_opus":0.012775095667655105,"score_gpt":0.2185517290036532,"score_spread":0.20577663333599808,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4401070506","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99835384,0.00006667927,0.0007847823,0.000018043977,0.0000033810345,0.0000031235334,0.000076571174,0.000028692513,0.00066510425],"genre_scores_gemma":[0.99782807,0.00004879777,0.0010987539,0.000009533775,0.0000015238625,0.0000074822956,0.00011254608,0.00001090719,0.00088233437],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999136,0.0000060478546,0.0000037608395,0.000028416816,0.000032831907,0.000015397884],"domain_scores_gemma":[0.9998086,0.000040685296,0.000051548348,0.000016476974,0.000059109494,0.000023519777],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00009418325,0.00011431614,0.00013851655,0.00010841181,0.0002829889,0.00033780208,0.00025834586,0.00020595007,0.0007050296],"category_scores_gemma":[0.0002671953,0.00017467453,0.00008901095,0.00011197091,0.00025396867,0.00026937126,0.00011852422,0.000104106664,0.0002083677],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000041639138,0.000006096587,0.001033145,0.000015333704,0.000003902839,0.000053728025,0.00004897744,0.00028188495,0.99802184,0.000069507885,0.000028533595,0.0003954622],"study_design_scores_gemma":[0.000008411875,0.00017547468,0.016299725,0.0000035376038,0.000016602768,0.00014941451,0.00009505546,0.003615621,0.9786517,0.000045644785,0.0009315321,0.0000074001277],"about_ca_topic_score_codex":0.001874826,"about_ca_topic_score_gemma":0.0036113895,"teacher_disagreement_score":0.001874826,"about_ca_system_score_codex":0.00041898378,"about_ca_system_score_gemma":0.00020054396,"threshold_uncertainty_score":0.0037277937},"labels":[],"label_agreement":null},{"id":"W4402592757","doi":"10.1109/led.2024.3462949","title":"80 Gbps PAM-4 Data Transmission With 940 nm VCSELs Grown on a 330 μm Ge Substrate","year":2024,"lang":"en","type":"article","venue":"IEEE Electron Device Letters","topic":"Photonic and Optical Devices","field":"Engineering","cited_by":5,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of British Columbia","funders":"National Chung-Shan Institute of Science and Technology; National Science and Technology Council; Taiwan Semiconductor Manufacturing Company","keywords":"Optoelectronics; Substrate (aquarium); Materials science; Transmission (telecommunications); Gallium arsenide; Optics; Physics; Computer science; Telecommunications","score_opus":0.015597519437087306,"score_gpt":0.23533759885729372,"score_spread":0.2197400794202064,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4402592757","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.98956317,0.00014088515,0.003593075,0.00015674798,0.00004534457,0.000023890489,0.00025850962,0.00032590976,0.005892625],"genre_scores_gemma":[0.9767989,0.0002522417,0.011547108,0.00011078495,0.000026706557,0.000044310746,0.0005586828,0.00008002075,0.010581332],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99989676,0.000012417376,0.0000068215863,0.000024722236,0.000033757115,0.000025569621],"domain_scores_gemma":[0.9998492,0.000046917383,0.000019415944,0.000023404804,0.00004341003,0.000017676713],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00023581451,0.0002297217,0.00024250783,0.00018231307,0.00029313882,0.00031603294,0.0003357633,0.00031132708,0.0031921384],"category_scores_gemma":[0.00035437857,0.00014315867,0.00013029495,0.00022742663,0.00014747774,0.00037910108,0.00025973286,0.0002393749,0.00057341816],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0001944388,0.000042607368,0.00056989957,0.00004252646,0.000011626953,0.00019521992,0.00012784766,0.0005105792,0.9882045,0.00051112217,0.0011332958,0.008456285],"study_design_scores_gemma":[0.000025144602,0.00020587756,0.0029494534,0.000010185065,0.000015019155,0.00017502118,0.00008352004,0.011612375,0.9786485,0.00011870738,0.0061369147,0.000019171284],"about_ca_topic_score_codex":0.001791877,"about_ca_topic_score_gemma":0.0016625236,"teacher_disagreement_score":0.0031921384,"about_ca_system_score_codex":0.000600034,"about_ca_system_score_gemma":0.00020595007,"threshold_uncertainty_score":0.010678709},"labels":[],"label_agreement":null},{"id":"W4408710863","doi":"10.1109/led.2025.3553672","title":"Industrially Fabricated Single-Electron Quantum Dots in Si/Si—Ge Heterostructures","year":2025,"lang":"en","type":"article","venue":"IEEE Electron Device Letters","topic":"Silicon Nanostructures and Photoluminescence","field":"Materials Science","cited_by":9,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"","funders":"H2020 Future and Emerging Technologies; Ontario Ministry of Research and Innovation; Deutsche Forschungsgemeinschaft; Bundesministerium für Bildung und Forschung; Foundation for Anesthesia Education and Research","keywords":"Quantum dot; Heterojunction; Optoelectronics; Materials science; Electron; Silicon; Germanium; Nanotechnology; Condensed matter physics; Engineering physics; Physics; Quantum mechanics","score_opus":0.013604016019294488,"score_gpt":0.2561387837945904,"score_spread":0.2425347677752959,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4408710863","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99620914,0.00015635946,0.0019050315,0.000040752293,0.000015567184,0.000013555787,0.00009376849,0.00004797916,0.0015178818],"genre_scores_gemma":[0.99229217,0.000086679334,0.007114206,0.000008030335,0.0000022600327,0.0000109170915,0.000054781696,0.000013070895,0.00041793808],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998828,0.000013622058,0.000008472126,0.000027561226,0.00005278512,0.00001470908],"domain_scores_gemma":[0.9998784,0.00003361293,0.000028409233,0.000027719578,0.000022286735,0.000009535242],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00017847268,0.00013733447,0.00013286724,0.000105097024,0.00022853806,0.0003064595,0.00028715754,0.00022079828,0.00047788527],"category_scores_gemma":[0.00025997442,0.00011434274,0.00008441825,0.00012260478,0.00022938552,0.00015660143,0.00014725585,0.00018940942,0.00014402346],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000028863087,0.00001949223,0.00048871036,0.0000388219,0.0000061121486,0.000073718526,0.000056036126,0.0007537279,0.9965733,0.0006889828,0.00006772203,0.0012045433],"study_design_scores_gemma":[0.000011047902,0.0001229145,0.0013372898,0.0000034771858,0.000005661097,0.000044516422,0.00003093232,0.0034731477,0.99406403,0.00007115468,0.00083143485,0.000004439828],"about_ca_topic_score_codex":0.0008040698,"about_ca_topic_score_gemma":0.0023519248,"teacher_disagreement_score":0.0008040698,"about_ca_system_score_codex":0.00040467875,"about_ca_system_score_gemma":0.000158998,"threshold_uncertainty_score":0.002936244},"labels":[],"label_agreement":null},{"id":"W4409057856","doi":"10.1109/led.2025.3556348","title":"Nanosheet Transistors Produced in 300 mm Fabrication Platform for Quantum Computing","year":2025,"lang":"en","type":"article","venue":"IEEE Electron Device Letters","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":5,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Université de Sherbrooke","funders":"Fonds de recherche du Québec – Nature et technologies; Natural Sciences and Engineering Research Council of Canada","keywords":"Nanosheet; Fabrication; Transistor; Quantum computer; Optoelectronics; Materials science; Quantum; Nanotechnology; Computer science; Electronic engineering; Electrical engineering; Engineering; Physics; Voltage","score_opus":0.01593592062315892,"score_gpt":0.25822916663885975,"score_spread":0.24229324601570085,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4409057856","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9827696,0.00029221844,0.012407651,0.00014237758,0.000098681725,0.000064228494,0.0008277331,0.00030083815,0.0030966238],"genre_scores_gemma":[0.96930087,0.000219313,0.024798129,0.00004278907,0.00001658599,0.000097583965,0.00081915146,0.00010400407,0.004601551],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998987,0.000005176382,0.000004514955,0.000030602394,0.000043896813,0.00001714304],"domain_scores_gemma":[0.9998179,0.000042332525,0.0000418926,0.00004516983,0.000035825935,0.00001692346],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0001399089,0.0001515038,0.00018235722,0.00012947505,0.0002618336,0.00022430555,0.00043365464,0.00026243416,0.0026350026],"category_scores_gemma":[0.00033829856,0.00012799537,0.00009107608,0.00016066006,0.00023021217,0.00045579294,0.00023400884,0.00029222135,0.00051938335],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000048486778,0.000020157646,0.00039737226,0.00003515053,0.0000056570107,0.00009856687,0.00004305768,0.00065850705,0.99507695,0.0011775363,0.00029230758,0.0021462308],"study_design_scores_gemma":[0.000009388281,0.00014834217,0.0021487828,0.0000045141364,0.000004676404,0.00007890853,0.00002536691,0.003690128,0.9879017,0.00033126818,0.0056500994,0.00000680222],"about_ca_topic_score_codex":0.0004920717,"about_ca_topic_score_gemma":0.0012024054,"teacher_disagreement_score":0.0026350026,"about_ca_system_score_codex":0.00030496606,"about_ca_system_score_gemma":0.00018448861,"threshold_uncertainty_score":0.008814931},"labels":[],"label_agreement":null},{"id":"W4415482718","doi":"10.1109/led.2025.3624755","title":"Curvature-Induced Plasmonic 3D-Graphene/Si Broadband Photodetectors for Information Encryption and Image Acquisition","year":2025,"lang":"","type":"article","venue":"IEEE Electron Device Letters","topic":"Plasmonic and Surface Plasmon Research","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Advanced Micro Devices (Canada)","funders":"National Key Research and Development Program of China; National Natural Science Foundation of China","keywords":"Photodetector; Responsivity; Plasmon; Encryption; Detector; Planar; Image sensor; Broadband; Noise (video)","score_opus":0.00735930805116333,"score_gpt":0.2470989984227235,"score_spread":0.23973969037156018,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4415482718","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.7964313,0.0054910188,0.17514786,0.00095613993,0.000271446,0.00012905033,0.00091063435,0.003583479,0.017079087],"genre_scores_gemma":[0.8988903,0.0012840133,0.09370148,0.00017201465,0.000029613517,0.00003507675,0.00026225628,0.00007317814,0.005552071],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99987173,0.000013525802,0.0000049815912,0.000023883173,0.00006847334,0.000017374068],"domain_scores_gemma":[0.9998914,0.000028475706,0.000022616827,0.00001951145,0.000026860169,0.000011104574],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00010299119,0.00029464628,0.00016467276,0.00029419098,0.0001572261,0.00029698908,0.00043305504,0.00053130934,0.0011775228],"category_scores_gemma":[0.00019646923,0.00017783821,0.0002605059,0.0004035635,0.00021962059,0.00033810028,0.00031265724,0.00037498467,0.00056127086],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00005828268,0.000016776366,0.00023937272,0.000052831267,0.000012199656,0.00009511143,0.000030130868,0.0009206971,0.9771029,0.001199581,0.00067007664,0.019602185],"study_design_scores_gemma":[0.000010490281,0.00010191425,0.0015089303,0.000009737592,0.000015254188,0.00030244613,0.000022187834,0.021215562,0.96943283,0.0004571899,0.006893112,0.000030344072],"about_ca_topic_score_codex":0.00059769757,"about_ca_topic_score_gemma":0.0020359685,"teacher_disagreement_score":0.0011775228,"about_ca_system_score_codex":0.00058161555,"about_ca_system_score_gemma":0.00018226092,"threshold_uncertainty_score":0.004220009},"labels":[],"label_agreement":null}]}