{"meta":{"query_hash":"5afa33aefe1d","filters":{"venue":"IEEE Transactions on Electron Devices"},"cohort_total":177,"direct_labels_cover":0,"predictions_cover":177,"exported":177,"export_cap":100000,"truncated":false,"label_status":"direct model label, unvalidated","prediction_status":"machine_predicted_unvalidated (Codex and Gemma teacher distillation)","score_status":"score_only:v0-immature-baseline","snapshot":{"source":"OpenAlex, pinned release, all 482 partitions","release":"2026-06-24","frame_built":"2026-07-12"},"permalink":"https://metacan.xera.ac/q/5afa33aefe1d","api":"https://metacan.xera.ac/api/v1/cohort?venue=IEEE+Transactions+on+Electron+Devices"},"results":[{"id":"W1896581718","doi":"10.1109/ted.2015.2475126","title":"Afterpulsing Characteristics of Free-Running and Time-Gated Single-Photon Avalanche Diodes in 130-nm CMOS","year":2015,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Advanced Optical Sensing Technologies","field":"Physics and Astronomy","cited_by":41,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McMaster University","funders":"FedDev Ontario; Canada Foundation for Innovation; CMC Microsystems","keywords":"CMOS; Single-photon avalanche diode; Diode; Photon counting; Optoelectronics; Physics; Avalanche photodiode; Avalanche diode; Pixel; Photon; Materials science; Detector; Optics; Voltage; Breakdown voltage; Quantum mechanics","score_opus":0.01426501060234125,"score_gpt":0.2419168514138216,"score_spread":0.22765184081148035,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1896581718","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.98986965,0.00045071627,0.007626622,0.000065845124,0.000018606583,0.000014843206,0.0003124266,0.00022583587,0.0014153853],"genre_scores_gemma":[0.9945505,0.00020372313,0.0041174246,0.000029457,0.000009547377,0.000011477862,0.00011210026,0.000029538243,0.00093615503],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9997553,0.000017526942,0.000011690901,0.000056485245,0.00011917761,0.00003974791],"domain_scores_gemma":[0.9988833,0.00053455983,0.00020469769,0.0000713568,0.00024043818,0.00006569742],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00022613318,0.00021046342,0.00018348971,0.00023184421,0.0001097122,0.00032502282,0.00037231258,0.00031179012,0.0012186081],"category_scores_gemma":[0.0010644667,0.00013809743,0.00014399571,0.0002829595,0.00020680999,0.0003866295,0.00012404508,0.00025381712,0.000278267],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0002270751,0.000020041436,0.001584351,0.000052437732,0.000015726895,0.00009789578,0.00014887773,0.0010544913,0.98877627,0.00061871577,0.00019647271,0.007207779],"study_design_scores_gemma":[0.000023359358,0.0005077443,0.012795778,0.000013409048,0.000030747084,0.00053795637,0.000061248786,0.012674002,0.971253,0.00030773028,0.0017665297,0.00002841046],"about_ca_topic_score_codex":0.0008252985,"about_ca_topic_score_gemma":0.0010925224,"teacher_disagreement_score":0.0012186081,"about_ca_system_score_codex":0.00053249113,"about_ca_system_score_gemma":0.00024436464,"threshold_uncertainty_score":0.0040766597},"labels":[],"label_agreement":null},{"id":"W1992708321","doi":"10.1109/ted.2013.2297677","title":"Design and Fabrication of a Novel MEMS Capacitive Transducer With Multiple Moving Membrane, ${\\rm M}^{3}$-CMUT","year":2014,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Ultrasonics and Acoustic Wave Propagation","field":"Engineering","cited_by":21,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Manitoba","funders":"CMC Microsystems","keywords":"Transducer; Capacitive micromachined ultrasonic transducers; Capacitive sensing; Materials science; Microelectromechanical systems; Fabrication; Acoustics; Ultrasonic sensor; Deflection (physics); Voltage; Surface micromachining; Optoelectronics; Electrical engineering; Engineering; Optics","score_opus":0.00961646367147393,"score_gpt":0.19684878695469302,"score_spread":0.1872323232832191,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1992708321","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.3895585,0.0039312895,0.5961197,0.0010141907,0.0008082823,0.0006642294,0.00059940293,0.0014462488,0.00585823],"genre_scores_gemma":[0.4100519,0.001240748,0.58354837,0.00031067812,0.00013191864,0.00034861345,0.00021805303,0.000048236096,0.0041014464],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99957937,0.000016808388,0.000025652838,0.00012812996,0.0002161188,0.000033950637],"domain_scores_gemma":[0.9997347,0.000041108055,0.00008026155,0.000021789185,0.000084519765,0.00003771079],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00032183947,0.0004971933,0.00047537827,0.00030251362,0.00030834365,0.0005291495,0.0013873402,0.0012291652,0.00065700524],"category_scores_gemma":[0.00039480062,0.00049760775,0.00029586005,0.0004229066,0.00033005959,0.0008486207,0.00049015466,0.0004405798,0.00045962736],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000011561466,0.000008080553,0.000109839515,0.0000697185,0.0000042466063,0.00006294459,0.000020092491,0.00020848331,0.99377316,0.00039825254,0.00013072483,0.005202925],"study_design_scores_gemma":[0.00002626764,0.00037125577,0.0013096193,0.000010352247,0.000031367752,0.00077677966,0.000042305113,0.011563932,0.9749605,0.000134303,0.010736906,0.00003638081],"about_ca_topic_score_codex":0.00066673756,"about_ca_topic_score_gemma":0.0014989575,"teacher_disagreement_score":0.0013873402,"about_ca_system_score_codex":0.00055074284,"about_ca_system_score_gemma":0.00087153254,"threshold_uncertainty_score":0.003995955},"labels":[],"label_agreement":null},{"id":"W1993918690","doi":"10.1109/ted.2005.863542","title":"15-nm base type-II InP/GaAsSb/InP DHBTs with F/sub T/=384 GHz and a 6-V BV/sub CEO/","year":2006,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Semiconductor Quantum Structures and Devices","field":"Physics and Astronomy","cited_by":34,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Simon Fraser University","funders":"","keywords":"Materials science; Indium phosphide; Heterojunction bipolar transistor; Optoelectronics; Common emitter; Bipolar junction transistor; Heterojunction; Gallium arsenide; Lithography; Electrical engineering; Voltage; Transistor","score_opus":0.005950952068509289,"score_gpt":0.2149084604087488,"score_spread":0.20895750834023952,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1993918690","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99593437,0.00023216574,0.0014104601,0.000024506777,0.000008524312,0.00001867958,0.00023241318,0.000086354565,0.002052412],"genre_scores_gemma":[0.9944786,0.00016942319,0.0030034457,0.000019371231,0.000003946095,0.000020452042,0.00029000497,0.000017628003,0.0019970757],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99993706,0.0000035356063,0.0000027415663,0.000013554929,0.00002235122,0.000020697142],"domain_scores_gemma":[0.99990976,0.000012471465,0.000019157056,0.000009552397,0.000019669285,0.0000293371],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000062891835,0.00025535555,0.00019691052,0.00014353375,0.00026413507,0.00021591461,0.0003724635,0.00022382574,0.0016458208],"category_scores_gemma":[0.000121214114,0.00016416197,0.000114979855,0.00015767844,0.00013172532,0.00023317008,0.00018145045,0.00016838634,0.00042683363],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000046758043,0.000011929506,0.0007882768,0.000019715304,0.000005353783,0.000053076106,0.000028579649,0.00007492615,0.9977069,0.000056016786,0.000064610096,0.0011438966],"study_design_scores_gemma":[0.000013729989,0.00019124614,0.015860002,0.0000036563213,0.000026347214,0.0003030376,0.00004845306,0.0009747611,0.9798436,0.00006297985,0.0026675565,0.0000045752167],"about_ca_topic_score_codex":0.002157071,"about_ca_topic_score_gemma":0.004374949,"teacher_disagreement_score":0.002157071,"about_ca_system_score_codex":0.00040041519,"about_ca_system_score_gemma":0.00016200889,"threshold_uncertainty_score":0.00550586},"labels":[],"label_agreement":null},{"id":"W2022551088","doi":"10.1109/ted.2012.2209653","title":"Capacitance Modeling and Characterization of Planar MOSCAP Devices for Wideband-Gap Semiconductors With High-$\\kappa$ Dielectrics","year":2012,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Semiconductor materials and devices","field":"Engineering","cited_by":13,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Alberta","funders":"","keywords":"Capacitance; Materials science; Dielectric; Planar; Transistor; Optoelectronics; Transmission line; Semiconductor; Electronic engineering; Differential capacitance; Electrical engineering; Engineering; Computer science; Physics; Voltage; Electrode","score_opus":0.01678776082919921,"score_gpt":0.21610138163976056,"score_spread":0.19931362081056134,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2022551088","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.7769555,0.0007189696,0.21504873,0.00018456463,0.000038183112,0.000088233304,0.0008177515,0.0009802588,0.0051677767],"genre_scores_gemma":[0.98847264,0.00024618296,0.010389347,0.000015595357,0.000007988677,0.000026155218,0.0001773487,0.000019053257,0.00064556586],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998485,0.0000134767415,0.0000054335173,0.000033373773,0.00008215386,0.000017069488],"domain_scores_gemma":[0.99982196,0.00006872624,0.000022214308,0.000028337143,0.000050959792,0.000007768066],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00014509214,0.00040942477,0.00020820723,0.0003902966,0.00023582665,0.0003231212,0.0005870504,0.00042710183,0.0005606146],"category_scores_gemma":[0.0005580984,0.00012352054,0.00023560373,0.00051701145,0.00022948397,0.000610432,0.00021822874,0.00022675714,0.0001841928],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00019636465,0.00008324774,0.0030640208,0.00021867089,0.000057975125,0.0005003768,0.00016220621,0.20464633,0.7519223,0.0049802144,0.00078986725,0.0333784],"study_design_scores_gemma":[0.000014725991,0.00037714053,0.002819755,0.000011202078,0.000025819963,0.00028491038,0.00007330905,0.7507711,0.24139522,0.0012828959,0.0029140827,0.000029771752],"about_ca_topic_score_codex":0.0017865576,"about_ca_topic_score_gemma":0.0019933984,"teacher_disagreement_score":0.0017865576,"about_ca_system_score_codex":0.0005069212,"about_ca_system_score_gemma":0.0002940805,"threshold_uncertainty_score":0.0036780238},"labels":[],"label_agreement":null},{"id":"W2031972807","doi":"10.1109/ted.2012.2204998","title":"Investigation of Hole-Blocking Contacts for High-Conversion-Gain Amorphous Selenium Detectors for X-Ray Imaging","year":2012,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Perovskite Materials and Applications","field":"Engineering","cited_by":54,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Notation; Electroluminescence; Physics; Materials science; Stereochemistry; Topology (electrical circuits); Combinatorics; Chemistry; Mathematics; Nanotechnology; Layer (electronics); Arithmetic","score_opus":0.011280194242956247,"score_gpt":0.21881550477180356,"score_spread":0.2075353105288473,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2031972807","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9860389,0.0014303656,0.008793603,0.00015088198,0.000049687835,0.000048390117,0.00008491548,0.00008613204,0.0033169703],"genre_scores_gemma":[0.9874986,0.0009387365,0.008428577,0.000038479033,0.000016664211,0.000021814174,0.00011730546,0.00004140515,0.0028983795],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9997843,0.000017747252,0.0000070041124,0.000049968305,0.00010441408,0.000036589365],"domain_scores_gemma":[0.99964154,0.00013509701,0.00005757475,0.00003258665,0.00010695231,0.000026188554],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00022175781,0.00032409147,0.00022305113,0.00014188314,0.00031244213,0.0006289881,0.0005727256,0.0005815491,0.0014219811],"category_scores_gemma":[0.0006070062,0.00016947585,0.00014438164,0.00015387885,0.00022470497,0.00068311975,0.00020473068,0.0003277336,0.00050718384],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000062570776,0.000031588417,0.0005010795,0.000111959474,0.000007544997,0.00014993768,0.00008295782,0.00026049587,0.99587196,0.00076033,0.00011305063,0.0020464668],"study_design_scores_gemma":[0.000008704492,0.00015535376,0.0013333212,0.0000109254825,0.00001301143,0.00014414743,0.00010772129,0.004077892,0.991852,0.00007743417,0.0022146343,0.0000048343118],"about_ca_topic_score_codex":0.00095362164,"about_ca_topic_score_gemma":0.0015741646,"teacher_disagreement_score":0.0014219811,"about_ca_system_score_codex":0.00046198312,"about_ca_system_score_gemma":0.0002721297,"threshold_uncertainty_score":0.0047570467},"labels":[],"label_agreement":null},{"id":"W2040856193","doi":"10.1109/ted.2006.887220","title":"Stability of nc-Si:H TFTs With Silicon Nitride Gate Dielectric","year":2007,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":36,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Thin-film transistor; Materials science; Gate dielectric; Dielectric; Silicon nitride; Optoelectronics; Ohmic contact; Silicon; Amorphous solid; Amorphous silicon; PMOS logic; Transistor; Analytical Chemistry (journal); Nanotechnology; Electrical engineering; Crystallography; Crystalline silicon; Chemistry; Voltage; Organic chemistry","score_opus":0.008723043750223775,"score_gpt":0.21103014584762111,"score_spread":0.20230710209739733,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2040856193","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99799097,0.00037245543,0.00085902686,0.00003982937,0.00001140019,0.000004792073,0.00025994188,0.000020741545,0.00044095717],"genre_scores_gemma":[0.998324,0.0001747007,0.00059728243,0.000013212385,0.000007069787,0.000007748316,0.0002996213,0.000010655105,0.0005657998],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.999811,0.000010872189,0.000010183345,0.00007117984,0.00006670466,0.000030127774],"domain_scores_gemma":[0.9995987,0.00011895933,0.00006162807,0.000036800255,0.00015663088,0.000027348568],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00019711509,0.00018436745,0.00017956957,0.00008868333,0.00022881058,0.00024491837,0.00028442303,0.00034132772,0.00061304757],"category_scores_gemma":[0.00065428246,0.000080045786,0.000118743694,0.00015536307,0.00022636185,0.0003427114,0.00011064927,0.00017935192,0.000204426],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000118899494,0.000006634648,0.0012757216,0.00002168499,0.000011579675,0.00005827373,0.00005667022,0.00026066657,0.9968022,0.000030305682,0.000058509173,0.0012988207],"study_design_scores_gemma":[0.0000058266446,0.00011094425,0.007754581,0.0000021853773,0.000015342383,0.00009461219,0.000037444563,0.0025068324,0.98900676,0.000015112589,0.00044488514,0.0000055109404],"about_ca_topic_score_codex":0.0034614229,"about_ca_topic_score_gemma":0.0032993567,"teacher_disagreement_score":0.0034614229,"about_ca_system_score_codex":0.00048723855,"about_ca_system_score_gemma":0.0001587435,"threshold_uncertainty_score":0.0068825483},"labels":[],"label_agreement":null},{"id":"W2048485090","doi":"10.1109/ted.2012.2205690","title":"Analysis of Dynamic Range, Linearity, and Noise of a Pulse-Frequency Modulation Pixel","year":2012,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"CCD and CMOS Imaging Sensors","field":"Engineering","cited_by":15,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"York University","funders":"CMC Microsystems","keywords":"Linearity; Comparator; CMOS; Pixel; Electronic engineering; Dynamic range; Fixed-pattern noise; Noise (video); Image sensor; Bandwidth (computing); Computer science; Electrical engineering; Engineering; Telecommunications; Artificial intelligence; Voltage; Image (mathematics)","score_opus":0.007031546990228557,"score_gpt":0.235956764203837,"score_spread":0.22892521721360842,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2048485090","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.5603829,0.0013896279,0.4293948,0.00030473832,0.00003306413,0.00006947987,0.00026528674,0.0011565515,0.0070034293],"genre_scores_gemma":[0.96626294,0.00022580082,0.031120518,0.000055028064,0.000014522449,0.000039106948,0.00012496239,0.00006516647,0.0020919319],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9994542,0.00007205473,0.000021763344,0.00011413513,0.00029761367,0.0000402204],"domain_scores_gemma":[0.99910647,0.00050211756,0.00008825789,0.00006414276,0.00022115676,0.000017760949],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00039605005,0.00030588155,0.00034718344,0.0004279591,0.00021057764,0.0003661287,0.00042559806,0.00040706914,0.0014621023],"category_scores_gemma":[0.0015983408,0.00016881234,0.00026980642,0.0003057253,0.00019415945,0.00059859664,0.00016654682,0.00020678318,0.00028848456],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00050341256,0.00006062255,0.004925426,0.0002612422,0.00009426414,0.00035719722,0.00015890267,0.07093719,0.840647,0.0036062687,0.0004480714,0.07800047],"study_design_scores_gemma":[0.000019030631,0.00085580203,0.010444412,0.000026768987,0.00008732144,0.0011291433,0.000052062605,0.50512725,0.47730896,0.0011903387,0.0037181522,0.000040808252],"about_ca_topic_score_codex":0.00068307813,"about_ca_topic_score_gemma":0.00066964084,"teacher_disagreement_score":0.0014621023,"about_ca_system_score_codex":0.0007591737,"about_ca_system_score_gemma":0.00034133278,"threshold_uncertainty_score":0.0055081844},"labels":[],"label_agreement":null},{"id":"W2050982403","doi":"10.1109/ted.2013.2290087","title":"Analytical Expression for Thermionic Transport Through Isotype Heterojunction Interfaces of Arbitrary Doping Ratio","year":2014,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Advanced Thermodynamics and Statistical Mechanics","field":"Physics and Astronomy","cited_by":5,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McMaster University","funders":"","keywords":"Thermionic emission; Heterojunction; Current density; Lambert W function; Doping; Boundary value problem; Expression (computer science); Schottky diode; Schottky effect; Mathematical analysis; Transcendental equation; Condensed matter physics; Materials science; Mathematics; Chemistry; Physics; Optoelectronics; Quantum mechanics; Diode; Numerical analysis; Electron; Computer science","score_opus":0.012676496450045179,"score_gpt":0.2787404911875666,"score_spread":0.2660639947375214,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2050982403","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.18106891,0.0040983446,0.70693016,0.0009613014,0.00030988737,0.00015012252,0.00030476722,0.0010111381,0.1051653],"genre_scores_gemma":[0.91961384,0.003006019,0.054314483,0.00038503687,0.00014640606,0.00014013101,0.00012558448,0.00020606631,0.022062406],"study_design_codex":"theoretical_or_conceptual","study_design_gemma":"theoretical_or_conceptual","domain_scores_codex":[0.99984694,0.000016810112,0.000010054879,0.000028214883,0.00006982971,0.000028104323],"domain_scores_gemma":[0.99980456,0.000057497546,0.000026190677,0.00001890175,0.00007992845,0.000012896809],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00051623734,0.00054231286,0.00036900313,0.0008244055,0.0004478321,0.0010916668,0.0010968226,0.00081251335,0.002441558],"category_scores_gemma":[0.00091993087,0.00023207375,0.0004286428,0.00048694955,0.0006981416,0.0011011458,0.0004989678,0.0004966219,0.00095652585],"study_design_candidate":"theoretical_or_conceptual","study_design_consensus":"theoretical_or_conceptual","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000069835834,0.000100569545,0.0008543505,0.0004684384,0.000040110957,0.0010250484,0.00046439446,0.07833007,0.2340199,0.6553217,0.0025432731,0.026762363],"study_design_scores_gemma":[0.000016050095,0.00009268858,0.0009950664,0.000103848855,0.00005165015,0.00070537324,0.00015475015,0.860926,0.034251202,0.09431346,0.008341725,0.00004810996],"about_ca_topic_score_codex":0.00067129795,"about_ca_topic_score_gemma":0.0009476272,"teacher_disagreement_score":0.002441558,"about_ca_system_score_codex":0.0010470757,"about_ca_system_score_gemma":0.0005549576,"threshold_uncertainty_score":0.008167803},"labels":[],"label_agreement":null},{"id":"W2059367048","doi":"10.1109/ted.2013.2283802","title":"Electrical Comparison of ${\\rm HfO}_{2}$ and ${\\rm ZrO}_{2}$ Gate Dielectrics on GaN","year":2013,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":24,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Alberta","funders":"","keywords":"Dielectric; Gate dielectric; Materials science; Capacitance; Optoelectronics; Analytical Chemistry (journal); Electrical engineering; Chemistry; Physical chemistry; Transistor; Organic chemistry; Engineering","score_opus":0.014839140432327666,"score_gpt":0.26890739990318646,"score_spread":0.2540682594708588,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2059367048","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99761534,0.0004528024,0.00038009687,0.000040186696,0.00001656001,0.0000035731862,0.00013364585,0.00002342411,0.0013345117],"genre_scores_gemma":[0.9982822,0.00040826912,0.0003417085,0.000023356937,0.000010550814,0.0000038245325,0.00008981176,0.0000100666,0.0008301522],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99993443,0.000008312954,0.0000028271213,0.00000978803,0.000022597229,0.000021914608],"domain_scores_gemma":[0.9998678,0.000047203426,0.000024308601,0.00001164137,0.000036912425,0.000012034525],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000076649005,0.00014126512,0.00013520765,0.00008265575,0.00008300432,0.00021801161,0.00018357985,0.00012904256,0.00096132286],"category_scores_gemma":[0.00024723265,0.000066518514,0.0001032059,0.00012415348,0.000084796004,0.00015909765,0.00007070403,0.00009773245,0.00014590292],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00021428542,0.00001508265,0.0005943577,0.00008455184,0.000013923719,0.000106186664,0.000026930613,0.0005646113,0.9948383,0.00017724812,0.00014592636,0.0032186187],"study_design_scores_gemma":[0.00002322153,0.00056623085,0.012026206,0.000010157418,0.000032248634,0.00015597092,0.00008704425,0.0041649756,0.9809207,0.000050396568,0.0019543602,0.000008409904],"about_ca_topic_score_codex":0.001042828,"about_ca_topic_score_gemma":0.0021835568,"teacher_disagreement_score":0.001042828,"about_ca_system_score_codex":0.00022814074,"about_ca_system_score_gemma":0.00007762799,"threshold_uncertainty_score":0.0032159686},"labels":[],"label_agreement":null},{"id":"W2067795404","doi":"10.1109/ted.2012.2231961","title":"A Quad-Sampling Wide-Dynamic-Range Pulse-Frequency Modulation Pixel","year":2012,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"CCD and CMOS Imaging Sensors","field":"Engineering","cited_by":10,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"York University","funders":"CMC Microsystems","keywords":"Pixel; Dynamic range; Sampling (signal processing); Quantization (signal processing); Wide dynamic range; Electronic engineering; Image resolution; High dynamic range; Image sensor; Computer science; Modulation (music); Engineering; Physics; Algorithm; Computer vision; Acoustics","score_opus":0.013095969413573168,"score_gpt":0.24700149172662644,"score_spread":0.23390552231305328,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2067795404","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.29018822,0.002127135,0.6957037,0.0005668298,0.0002736353,0.00024345929,0.0004940758,0.0024200452,0.007982871],"genre_scores_gemma":[0.48008096,0.00028195704,0.5163156,0.00030920398,0.000074306256,0.00008485596,0.00017333975,0.000039914437,0.0026398492],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99977356,0.00002247872,0.000010230259,0.000073834475,0.000100956626,0.00001892638],"domain_scores_gemma":[0.9998516,0.000025966034,0.00003107013,0.000026006031,0.000043070053,0.000022294089],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00020551067,0.0001985466,0.00033344055,0.00023637505,0.00019726325,0.00035877287,0.0009277084,0.00047544445,0.0014695087],"category_scores_gemma":[0.00031428243,0.00025820945,0.00014626913,0.00024764525,0.00018240955,0.000584094,0.000405931,0.00031315754,0.0005117498],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00016736978,0.000071488925,0.00076291873,0.00014299454,0.000014723856,0.00016572271,0.000048378188,0.0009846587,0.90949154,0.0022283783,0.0011516334,0.084770136],"study_design_scores_gemma":[0.00006475313,0.0012333862,0.0052087056,0.000030362005,0.000046216286,0.0036114452,0.000022157737,0.05916744,0.91003597,0.00062383484,0.01989431,0.00006139854],"about_ca_topic_score_codex":0.00018788017,"about_ca_topic_score_gemma":0.00027972547,"teacher_disagreement_score":0.0014695087,"about_ca_system_score_codex":0.00023300585,"about_ca_system_score_gemma":0.00029739228,"threshold_uncertainty_score":0.004916072},"labels":[],"label_agreement":null},{"id":"W2070002915","doi":"10.1109/ted.2012.2231682","title":"Measurement of UV from a Microplasma by a Microfabricated Amorphous Selenium Detector","year":2012,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Luminescence Properties of Advanced Materials","field":"Materials Science","cited_by":40,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Microplasma; Detector; Optoelectronics; Responsivity; Noise (video); Photon; Materials science; Spectrometer; Particle detector; Optics; Photodetector; SIGNAL (programming language); Analytical Chemistry (journal); Physics; Chemistry; Plasma","score_opus":0.014069215650848607,"score_gpt":0.22645464348163805,"score_spread":0.21238542783078945,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2070002915","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9377611,0.0007891379,0.0587896,0.00009346788,0.000045947727,0.00004363323,0.00020347873,0.0005546491,0.0017190317],"genre_scores_gemma":[0.919574,0.00054471026,0.076119065,0.00006016191,0.000025731038,0.00006009963,0.00016701492,0.00005380344,0.0033953104],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9997898,0.000024024761,0.00000830359,0.00005671336,0.00010531361,0.000015788974],"domain_scores_gemma":[0.999705,0.00011359599,0.0000655628,0.000033420005,0.000062150204,0.000020234043],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00017432644,0.00031344488,0.0002647084,0.0003119168,0.00023689531,0.00035858413,0.0006384191,0.00041654153,0.0009505688],"category_scores_gemma":[0.00037269364,0.00014159053,0.00015524431,0.00024943743,0.00029438906,0.0002914395,0.00033586397,0.00034894142,0.0003547396],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000027805061,0.000012317564,0.0006242917,0.00002339093,0.0000042602805,0.000055608347,0.000020366513,0.00007933966,0.9960303,0.0001240062,0.000052539428,0.0029458068],"study_design_scores_gemma":[0.0000038300886,0.00010253736,0.0009131097,0.000002259358,0.0000076223682,0.00017843445,0.000017398641,0.0016069176,0.9957931,0.000033074866,0.0013374994,0.000004180758],"about_ca_topic_score_codex":0.00024290029,"about_ca_topic_score_gemma":0.00072676694,"teacher_disagreement_score":0.0009505688,"about_ca_system_score_codex":0.00028129076,"about_ca_system_score_gemma":0.00017736827,"threshold_uncertainty_score":0.0031799674},"labels":[],"label_agreement":null},{"id":"W2075196297","doi":"10.1109/16.906457","title":"Performance predictions for n-p-n Al/sub x/Ga/sub 1-x/N/GaN HBTs","year":2001,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":16,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of British Columbia","funders":"","keywords":"Cutoff frequency; Cutoff; Materials science; Dopant; Optoelectronics; Base (topology); Realization (probability); Doping; Limit (mathematics); Carrier lifetime; Physics; Computational physics; Mathematics; Silicon; Mathematical analysis; Statistics","score_opus":0.012712301695609928,"score_gpt":0.24811063735091843,"score_spread":0.2353983356553085,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2075196297","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.85435706,0.0016091272,0.10893511,0.0004993517,0.00005754943,0.000075712545,0.0009797638,0.0014488568,0.032037478],"genre_scores_gemma":[0.9941962,0.00033057635,0.0031549851,0.000027870141,0.000011587518,0.000029255494,0.00014426422,0.000037240527,0.0020680283],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9998062,0.000026710342,0.0000062507843,0.000029028055,0.00007246001,0.00005933962],"domain_scores_gemma":[0.9996773,0.00017073672,0.00003446058,0.000024996098,0.0000729155,0.00001965131],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00030143687,0.00056689733,0.00032886537,0.00022440823,0.00016937604,0.00040002263,0.0005583067,0.00076155295,0.0014304788],"category_scores_gemma":[0.0009567404,0.00012969426,0.00035164776,0.00014458045,0.00027687076,0.000673966,0.00020904967,0.00025579613,0.00088540034],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000322789,0.00005318119,0.004929677,0.0001508069,0.000038084163,0.00033355452,0.00010647934,0.82990456,0.13201213,0.00861514,0.001442256,0.02209131],"study_design_scores_gemma":[0.000016097505,0.0003058482,0.003701766,0.000024205281,0.000021169217,0.00014088397,0.00003954357,0.96272933,0.02788562,0.0036480508,0.0014742241,0.000013318041],"about_ca_topic_score_codex":0.002491335,"about_ca_topic_score_gemma":0.0019632315,"teacher_disagreement_score":0.002491335,"about_ca_system_score_codex":0.00080878194,"about_ca_system_score_gemma":0.00019458386,"threshold_uncertainty_score":0.0058680773},"labels":[],"label_agreement":null},{"id":"W2097929344","doi":"10.1109/ted.2006.885663","title":"At-Bias Extraction of Access Parasitic Resistances in AlGaN/GaN HEMTs: Impact on Device Linearity and Channel Electron Velocity","year":2006,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":70,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Simon Fraser University","funders":"","keywords":"Linearity; Biasing; Transistor; Channel (broadcasting); Physics; Topology (electrical circuits); Optoelectronics; Materials science; Analytical Chemistry (journal); Electrical engineering; Computer science; Chemistry; Voltage; Telecommunications; Engineering; Quantum mechanics","score_opus":0.024891370477768387,"score_gpt":0.3110855892601783,"score_spread":0.2861942187824099,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2097929344","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.97563213,0.00016662253,0.022000596,0.000050129544,0.000011437309,0.000011769349,0.00026795987,0.00033816282,0.001521275],"genre_scores_gemma":[0.99605274,0.00007321898,0.0027748947,0.000011480024,0.0000037998602,0.000008027031,0.00011017088,0.000035116984,0.0009303815],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99988306,0.000015815405,0.0000065887307,0.000035003686,0.00004471113,0.000014913072],"domain_scores_gemma":[0.9995534,0.00026152268,0.000057566438,0.000054472097,0.00006316934,0.000009907116],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00022480526,0.00023380877,0.00013956393,0.00020271793,0.00011825307,0.00033776875,0.00037347004,0.00022852105,0.0006727409],"category_scores_gemma":[0.00069049804,0.00013622119,0.00019947108,0.00025128643,0.00015504372,0.00051216903,0.00015744362,0.00023325525,0.00022530546],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00030615204,0.00004831337,0.0073323445,0.000095897056,0.000034958815,0.00020080431,0.0002323208,0.014032065,0.9479575,0.0007219124,0.00018909354,0.028848657],"study_design_scores_gemma":[0.0000063838465,0.00025528728,0.01562613,0.000010658619,0.00004193052,0.00017935855,0.000060206985,0.05874583,0.92401385,0.0002957165,0.0007497309,0.000014919482],"about_ca_topic_score_codex":0.0013364479,"about_ca_topic_score_gemma":0.002677921,"teacher_disagreement_score":0.0013364479,"about_ca_system_score_codex":0.00038529772,"about_ca_system_score_gemma":0.00017766499,"threshold_uncertainty_score":0.002795577},"labels":[],"label_agreement":null},{"id":"W2098194845","doi":"10.1109/16.974769","title":"A scalable meander-line resistor model for silicon RFICs","year":2002,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Radio Frequency Integrated Circuit Design","field":"Engineering","cited_by":23,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McMaster University","funders":"CMC Microsystems","keywords":"RFIC; Resistor; Meander (mathematics); Equivalent circuit; Scalability; Electronic engineering; Line (geometry); Radio frequency; Electrical engineering; Silicon; Materials science; Engineering; Computer science; Optoelectronics; Voltage","score_opus":0.03409433805715776,"score_gpt":0.23485792744777176,"score_spread":0.200763589390614,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2098194845","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.0067190356,0.00038408354,0.9814811,0.00010863775,0.000057073303,0.00007724978,0.00031833176,0.001203909,0.009650618],"genre_scores_gemma":[0.37989277,0.0019388924,0.59012103,0.00014977556,0.00012861271,0.0009219748,0.0012858787,0.00060533354,0.024955744],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9998062,0.000028193454,0.000007386009,0.000038985152,0.00010537451,0.000013868408],"domain_scores_gemma":[0.99988604,0.000035876797,0.000014726166,0.000027547334,0.000031463853,0.000004298764],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00019049649,0.00087602885,0.00060254533,0.00033679124,0.00025426692,0.0006017708,0.002000698,0.0010174526,0.0040948642],"category_scores_gemma":[0.0005018046,0.00037464235,0.00095381116,0.00035576613,0.0002056769,0.0010995032,0.00027454286,0.0007516422,0.0023041812],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00004269082,0.000050668474,0.00020436576,0.00020221053,0.000043709246,0.00024040249,0.00007966246,0.8228661,0.088832244,0.046815265,0.0036506655,0.036971997],"study_design_scores_gemma":[0.000009254059,0.000066218854,0.000089279034,0.00001056893,0.000017559874,0.00011094796,0.0000073089263,0.97878027,0.004501328,0.0057279156,0.010667494,0.000011821274],"about_ca_topic_score_codex":0.0010441601,"about_ca_topic_score_gemma":0.001783421,"teacher_disagreement_score":0.0040948642,"about_ca_system_score_codex":0.0004576048,"about_ca_system_score_gemma":0.00048122177,"threshold_uncertainty_score":0.013698697},"labels":[],"label_agreement":null},{"id":"W2099689722","doi":"10.1109/16.960389","title":"InP/GaAsSb/InP double HBTs: a new alternative for InP-based DHBTs","year":2001,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Semiconductor Quantum Structures and Devices","field":"Physics and Astronomy","cited_by":73,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Simon Fraser University","funders":"","keywords":"Cutoff frequency; Materials science; Optoelectronics; Bipolar junction transistor; Heterojunction bipolar transistor; Indium phosphide; Metalorganic vapour phase epitaxy; Gallium arsenide; Heterojunction; Oscillation (cell signaling); Indium gallium arsenide; Voltage; Transistor; Electrical engineering; Epitaxy; Chemistry; Nanotechnology","score_opus":0.025400076237402237,"score_gpt":0.2955764601981051,"score_spread":0.2701763839607028,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2099689722","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9781018,0.0033913914,0.010714531,0.00023651117,0.000057965306,0.00001759053,0.00018672533,0.00028741505,0.007006095],"genre_scores_gemma":[0.98910844,0.00095630425,0.0078295395,0.00003903295,0.000023435758,0.000008820964,0.00011364693,0.000021230167,0.0018994871],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999677,0.0000031937827,0.0000014503571,0.000009240178,0.000011063412,0.0000073456554],"domain_scores_gemma":[0.9999572,0.0000074584937,0.0000074792497,0.000008788253,0.000010272952,0.000008803353],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00003799541,0.00017345084,0.00015109034,0.00014298364,0.00028510284,0.00039549448,0.00032496615,0.0001797323,0.0012468125],"category_scores_gemma":[0.00006570511,0.00009639501,0.000080889,0.00015610644,0.00013684688,0.00032776673,0.00017440443,0.00024011047,0.000251412],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00006311452,0.000019270059,0.0012933777,0.00006500588,0.000012386574,0.00020903444,0.000050048937,0.00034587292,0.98097205,0.000875984,0.00024697735,0.015846852],"study_design_scores_gemma":[0.000028996777,0.000637388,0.013826244,0.000024425539,0.00008674434,0.00200806,0.00016485518,0.009163947,0.94945234,0.0013194773,0.023271877,0.000015688274],"about_ca_topic_score_codex":0.00041643673,"about_ca_topic_score_gemma":0.0016616968,"teacher_disagreement_score":0.0012468125,"about_ca_system_score_codex":0.00015125437,"about_ca_system_score_gemma":0.00007389351,"threshold_uncertainty_score":0.004171014},"labels":[],"label_agreement":null},{"id":"W2100166869","doi":"10.1109/ted.2002.804728","title":"Closed-form breakdown voltage model for PD SOI NMOS devices considering impact ionization of both parasitic BJT and surface MOS channel simultaneously","year":2002,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Semiconductor materials and devices","field":"Engineering","cited_by":2,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"NMOS logic; Impact ionization; Bipolar junction transistor; Breakdown voltage; Materials science; Silicon on insulator; Subthreshold conduction; Optoelectronics; MOSFET; Voltage; Electrostatic discharge; Ionization; Electrical engineering; Transistor; Silicon; Chemistry; Engineering; Ion","score_opus":0.018686485374297047,"score_gpt":0.2430595354790643,"score_spread":0.22437305010476727,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2100166869","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.04597985,0.0014029356,0.9388093,0.00022813202,0.000085846834,0.000081024926,0.00033886332,0.0008928502,0.012181271],"genre_scores_gemma":[0.9439956,0.0015165139,0.040121626,0.00014089818,0.00013201994,0.00022790342,0.0004257141,0.00019446544,0.013245289],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99974376,0.00003739479,0.000011642835,0.000050570692,0.00012158114,0.00003499931],"domain_scores_gemma":[0.99960035,0.00018965334,0.000041621675,0.000047838825,0.000110120985,0.00001050082],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00036182662,0.0007929693,0.00084589404,0.0005268709,0.00033385755,0.00085831893,0.0014171725,0.0011412927,0.0021268365],"category_scores_gemma":[0.0011823907,0.00032585094,0.0007544614,0.00030398896,0.0003988483,0.0015467802,0.00041778205,0.00074108556,0.0008938799],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00007500459,0.000052669093,0.00043933772,0.0001749773,0.00004703112,0.0002883042,0.00015296617,0.94061863,0.019619439,0.017052578,0.0012020475,0.020277021],"study_design_scores_gemma":[0.0000037280488,0.00001991286,0.00006965261,0.000003940042,0.0000066286534,0.000055195313,0.0000069714647,0.9964051,0.0007926499,0.0020031708,0.0006299596,0.0000030928693],"about_ca_topic_score_codex":0.0016999922,"about_ca_topic_score_gemma":0.0015745192,"teacher_disagreement_score":0.0021268365,"about_ca_system_score_codex":0.00069335895,"about_ca_system_score_gemma":0.00040555737,"threshold_uncertainty_score":0.0071150064},"labels":[],"label_agreement":null},{"id":"W2101234418","doi":"10.1109/ted.2005.856192","title":"Reset and Partition Noise in Active Pixel Image Sensors","year":2005,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"CCD and CMOS Imaging Sensors","field":"Engineering","cited_by":12,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Reset (finance); Transistor; Noise (video); Partition (number theory); Pixel; Electronic engineering; Computer science; Noise measurement; Flicker noise; Noise generator; Noise floor; Electrical engineering; Engineering; Artificial intelligence; Mathematics; CMOS; Noise figure; Noise reduction; Voltage; Image (mathematics)","score_opus":0.005939933650472447,"score_gpt":0.22740322822646042,"score_spread":0.22146329457598798,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2101234418","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.3940265,0.0016468501,0.6005407,0.00010757723,0.00005113148,0.000038968505,0.000113977796,0.0011596037,0.0023146411],"genre_scores_gemma":[0.9872865,0.0002048219,0.011622197,0.000024005865,0.000018843588,0.000015881533,0.000050339164,0.00005244928,0.0007250389],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9994204,0.000099505494,0.000015481262,0.00012183369,0.0003070652,0.00003576838],"domain_scores_gemma":[0.99955267,0.00025128506,0.000058930138,0.000056186018,0.00006427687,0.000016672097],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00042379485,0.0005522691,0.00041874836,0.00047675078,0.00024623872,0.00065889553,0.0008764405,0.00078520185,0.00044859663],"category_scores_gemma":[0.0017774489,0.0004089764,0.00035187847,0.0003883409,0.00056205457,0.0010867495,0.00038618728,0.00048549494,0.0001859339],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00091843936,0.00013529602,0.0108469585,0.00029718596,0.00009971329,0.0008386453,0.00061559986,0.34897685,0.549097,0.020899277,0.00058566313,0.066689424],"study_design_scores_gemma":[0.000013298972,0.00025192782,0.00362614,0.000023554192,0.000035828754,0.0004350619,0.000044076678,0.87689066,0.115200214,0.0026268084,0.0008201773,0.000032226282],"about_ca_topic_score_codex":0.0010270248,"about_ca_topic_score_gemma":0.001079737,"teacher_disagreement_score":0.0010270248,"about_ca_system_score_codex":0.0006366431,"about_ca_system_score_gemma":0.00022879489,"threshold_uncertainty_score":0.0046191216},"labels":[],"label_agreement":null},{"id":"W2101373995","doi":"10.1109/ted.2003.813460","title":"Super-junction LDMOST on a silicon-on-sapphire substrate","year":2003,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Silicon Carbide Semiconductor Technologies","field":"Engineering","cited_by":106,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Toronto","funders":"","keywords":"Materials science; Breakdown voltage; Silicon; Optoelectronics; Electric field; Substrate (aquarium); Silicon on sapphire; CMOS; Sapphire; Voltage; Electrical engineering; Depletion region; Integrated circuit; Silicon on insulator; Semiconductor; Optics; Physics; Engineering","score_opus":0.013292015394084075,"score_gpt":0.22139225514788385,"score_spread":0.20810023975379977,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2101373995","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.98831046,0.0004778117,0.008586224,0.00003534861,0.00002424468,0.000023687708,0.00020649213,0.00022649199,0.0021092992],"genre_scores_gemma":[0.9853779,0.00017678706,0.013335625,0.000018445084,0.000007274389,0.000015830634,0.0001289221,0.000012347029,0.00092677557],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998915,0.000008237783,0.0000037551945,0.000024965762,0.00005406725,0.000017282644],"domain_scores_gemma":[0.9998448,0.000022539569,0.00004553266,0.000027941349,0.000038786173,0.000020484638],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00008348004,0.00021763281,0.00025909205,0.00013155273,0.00012760115,0.00025104577,0.0005999646,0.00025724276,0.0006283359],"category_scores_gemma":[0.00015012127,0.000150337,0.00014723606,0.00017407614,0.00014325631,0.00023850464,0.00016188796,0.00014809413,0.0002689822],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00006166494,0.000011361269,0.00052504754,0.00005877105,0.000007959063,0.00012885433,0.00001610282,0.0006148613,0.99548435,0.00016901376,0.00012618926,0.0027958904],"study_design_scores_gemma":[0.00003340416,0.00072310976,0.006450176,0.000008177864,0.000037425198,0.0007888301,0.000035190424,0.013554567,0.97463655,0.000060165174,0.0036560877,0.00001622044],"about_ca_topic_score_codex":0.0006428984,"about_ca_topic_score_gemma":0.0014780803,"teacher_disagreement_score":0.0006428984,"about_ca_system_score_codex":0.0002412321,"about_ca_system_score_gemma":0.00014044222,"threshold_uncertainty_score":0.0021019578},"labels":[],"label_agreement":null},{"id":"W2103144569","doi":"10.1109/ted.2005.845818","title":"Second Harmonic Operation at 460 GHz and Broadband Continuous Frequency Tuning of a Gyrotron Oscillator","year":2005,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Gyrotron and Vacuum Electronics Research","field":"Physics and Astronomy","cited_by":206,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Gyrotron; Physics; Microwave; Cyclotron resonance; Resonator; Magnetic field; Microsecond; Optics; Electron cyclotron resonance; Nuclear magnetic resonance; Cyclotron; Electrical engineering; Atomic physics; Electron; Engineering","score_opus":0.011526386055902463,"score_gpt":0.2680864754133071,"score_spread":0.25656008935740465,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2103144569","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99371004,0.00032614204,0.0045159087,0.000046136323,0.000014889174,0.0000048632755,0.000053443175,0.000053636235,0.0012749957],"genre_scores_gemma":[0.99488246,0.00014717886,0.0038763871,0.000009640775,0.000011131409,0.0000052775627,0.00006075819,0.00001445657,0.0009926609],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99990463,0.000010239792,0.000003907562,0.00002404462,0.000038043192,0.000019059466],"domain_scores_gemma":[0.99984694,0.00004607335,0.000033076823,0.000020062225,0.000022140901,0.000031578264],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00013394149,0.0001576586,0.00014791262,0.000092451104,0.00010932131,0.00016098194,0.00016429256,0.00012623193,0.0008386021],"category_scores_gemma":[0.00025141847,0.00007202403,0.00007844552,0.000079192854,0.00019596504,0.00022890946,0.00024002462,0.0001826461,0.00016475002],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00009776359,0.00001200445,0.0011281904,0.000026957156,0.0000055846217,0.00005830275,0.000078997975,0.0003242103,0.99164236,0.00023807868,0.00006975717,0.0063178227],"study_design_scores_gemma":[0.000015389565,0.00056002475,0.008651152,0.000004768684,0.000014682263,0.00045674967,0.000044792407,0.0040950803,0.9808591,0.00014814752,0.0051363665,0.000013660429],"about_ca_topic_score_codex":0.00014276676,"about_ca_topic_score_gemma":0.0001900973,"teacher_disagreement_score":0.0008386021,"about_ca_system_score_codex":0.00009056442,"about_ca_system_score_gemma":0.00004569836,"threshold_uncertainty_score":0.0028054118},"labels":[],"label_agreement":null},{"id":"W2103592858","doi":"10.1109/16.925264","title":"Post-processed Cu inductors with application to a completely integrated 2-GHz VCO","year":2001,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Radio Frequency Integrated Circuit Design","field":"Engineering","cited_by":38,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Nortel (Canada); STMicroelectronics (Canada); Carleton University","funders":"","keywords":"Inductor; Voltage-controlled oscillator; Materials science; Phase noise; dBc; Electronic circuit; Optoelectronics; Offset (computer science); Electrical engineering; Polyimide; Voltage; Electronic engineering; Layer (electronics); Engineering; CMOS; Computer science; Nanotechnology","score_opus":0.010414285330572301,"score_gpt":0.22145622155701344,"score_spread":0.21104193622644113,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2103592858","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.8812568,0.001942068,0.10832352,0.00021392788,0.00044310637,0.00022105826,0.00019202485,0.0017875445,0.0056199403],"genre_scores_gemma":[0.9227774,0.0003759153,0.071935944,0.00008354999,0.00008479282,0.00009695278,0.00016280121,0.00012929793,0.0043531917],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9997656,0.000026779015,0.000012776339,0.000051707913,0.0000847277,0.000058458678],"domain_scores_gemma":[0.9996412,0.00007205213,0.000080314065,0.000059677113,0.00012488924,0.000021907594],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00022833071,0.00054594566,0.0003644064,0.00023607908,0.000187685,0.00067947985,0.0005558783,0.0004308377,0.0010008814],"category_scores_gemma":[0.0009266774,0.00029384255,0.00020504267,0.00028525564,0.00019388381,0.00031501646,0.00022534587,0.0002923679,0.0003275053],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000107804575,0.000025943467,0.00020893203,0.000058412446,0.000007796404,0.00008276178,0.00004500461,0.0005454902,0.9884803,0.00014152304,0.000106915766,0.01018912],"study_design_scores_gemma":[0.000036619054,0.00049579074,0.001810983,0.0000068051186,0.000022715638,0.00021783556,0.000022389542,0.003975801,0.98824817,0.00006615121,0.00508288,0.000013801916],"about_ca_topic_score_codex":0.0011247178,"about_ca_topic_score_gemma":0.0016251504,"teacher_disagreement_score":0.0011247178,"about_ca_system_score_codex":0.00035297257,"about_ca_system_score_gemma":0.00029563083,"threshold_uncertainty_score":0.003348291},"labels":[],"label_agreement":null},{"id":"W2105854516","doi":"10.1109/ted.2007.902867","title":"A Self-Consistent Full 3-D Real-Space NEGF Simulator for Studying Nonperturbative Effects in Nano-MOSFETs","year":2007,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":146,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Physics; Discretization; Quantum simulator; Nanowire; Computation; Non-equilibrium thermodynamics; Topology (electrical circuits); Quantum computer; Quantum; Statistical physics; Quantum mechanics; Computational physics; Algorithm; Computer science; Mathematics; Mathematical analysis","score_opus":0.012556831209082488,"score_gpt":0.2583139032396246,"score_spread":0.24575707203054212,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2105854516","genre_codex":"methods","genre_gemma":"methods","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"methods","genre_consensus":"methods","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.2646944,0.00018246818,0.7147296,0.0004417417,0.00008693169,0.00027391824,0.0013125624,0.003190537,0.015087793],"genre_scores_gemma":[0.7497337,0.00015228603,0.24409327,0.00017400335,0.000016449601,0.00068527635,0.0007928917,0.0004918704,0.0038602513],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9998994,0.000029810095,0.0000038185644,0.000010756861,0.00004436171,0.000011866687],"domain_scores_gemma":[0.99952304,0.00029301838,0.000024583569,0.000053699343,0.00007564889,0.000030046056],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00041405158,0.0004014328,0.0005390694,0.00025657553,0.00041852568,0.00049848313,0.0013529023,0.001105949,0.0039282567],"category_scores_gemma":[0.0010764089,0.0002890939,0.00047206494,0.00028967106,0.00046306508,0.00059322,0.00035979165,0.000528781,0.0004034835],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000030018335,0.000035793488,0.00042727726,0.00003586976,0.000013360134,0.00006780528,0.000049628274,0.98642576,0.0037694615,0.0055776727,0.00039682235,0.0031704472],"study_design_scores_gemma":[0.000008112743,0.0000073279875,0.00003753882,0.0000011382701,0.00000133274,0.0000060435577,0.0000036878375,0.9983278,0.0005007329,0.0007169108,0.00038680818,0.000002685247],"about_ca_topic_score_codex":0.0049390066,"about_ca_topic_score_gemma":0.0045698215,"teacher_disagreement_score":0.0049390066,"about_ca_system_score_codex":0.0008621073,"about_ca_system_score_gemma":0.0011952404,"threshold_uncertainty_score":0.013141274},"labels":[],"label_agreement":null},{"id":"W2107065006","doi":"10.1109/16.841219","title":"An analytic model for estimating the length of the velocity saturated region in GaAs MESFETs","year":2000,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Silicon Carbide Semiconductor Technologies","field":"Engineering","cited_by":4,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Calgary","funders":"CMC Microsystems","keywords":"Classification of discontinuities; Saturation (graph theory); Velocity saturation; Range (aeronautics); Saturation velocity; Channel (broadcasting); Mechanics; Work (physics); Computational physics; Materials science; Physics; Statistical physics; Mathematics; Engineering; Transistor; Mathematical analysis; Thermodynamics; Electrical engineering; Voltage; MOSFET","score_opus":0.019592357452728443,"score_gpt":0.25455057042542045,"score_spread":0.234958212972692,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2107065006","genre_codex":"methods","genre_gemma":"methods","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"methods","genre_consensus":"methods","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.052551,0.0007229407,0.94301355,0.00013335387,0.000024837382,0.00004112921,0.00015059297,0.0008238498,0.0025387204],"genre_scores_gemma":[0.8796215,0.0009164107,0.115338534,0.00006643473,0.000036717134,0.00014942842,0.00018095745,0.0001252895,0.0035646635],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99986386,0.000023060817,0.000006361629,0.000029391087,0.000055118806,0.000022296043],"domain_scores_gemma":[0.9997161,0.00014990562,0.00003843002,0.000025350284,0.000059558322,0.000010602013],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00024003928,0.0004874436,0.0003547974,0.0005022649,0.0003486566,0.00050492253,0.0010072681,0.00078493555,0.00063654693],"category_scores_gemma":[0.001237193,0.00037208802,0.0003588784,0.0003653275,0.00036011392,0.0009103565,0.0003121783,0.00043782164,0.00039020044],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00005038125,0.000016429656,0.0008639848,0.00005475779,0.00001481538,0.0001354709,0.00006731939,0.9156111,0.05272467,0.010070116,0.00047674723,0.019914275],"study_design_scores_gemma":[0.0000015192113,0.000014771276,0.00012247026,0.0000052047308,0.0000047508574,0.000033889366,0.0000050471626,0.99414414,0.003931055,0.0013172604,0.00041421264,0.000005756339],"about_ca_topic_score_codex":0.0037100685,"about_ca_topic_score_gemma":0.0028735718,"teacher_disagreement_score":0.0037100685,"about_ca_system_score_codex":0.0012502994,"about_ca_system_score_gemma":0.00070037594,"threshold_uncertainty_score":0.0090715885},"labels":[],"label_agreement":null},{"id":"W2107291033","doi":"10.1109/ted.2005.843884","title":"Analysis and Circuit Modeling of Waveguide-Separated Absorption Charge Multiplication-Avalanche Photodetector (WG-SACM-APD)","year":2005,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Photonic and Optical Devices","field":"Engineering","cited_by":23,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McMaster University","funders":"","keywords":"Photodetector; Avalanche photodiode; Optoelectronics; Parasitic extraction; Equivalent circuit; Materials science; Absorption (acoustics); Resistor; Electronic engineering; Optics; Voltage; Electrical engineering; Physics; Detector; Engineering","score_opus":0.013046409323323831,"score_gpt":0.23537081969940354,"score_spread":0.22232441037607972,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2107291033","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.05259088,0.001149717,0.9311791,0.00026976617,0.000057019734,0.00009838043,0.00035704146,0.00078386586,0.013514261],"genre_scores_gemma":[0.8127451,0.001959134,0.16750847,0.00013619357,0.000048603008,0.0002732109,0.0005356776,0.00012992891,0.016663741],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99984,0.000024563893,0.0000044661115,0.00002538965,0.00008913562,0.000016395134],"domain_scores_gemma":[0.9998845,0.000046949564,0.000015840653,0.000015671116,0.000033513432,0.0000035633802],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00017129593,0.00046495747,0.00034791947,0.00030812353,0.00024145715,0.00069988525,0.0010736284,0.00075158133,0.001744614],"category_scores_gemma":[0.00032094325,0.00028280038,0.00054204185,0.0003836965,0.00025241598,0.00082062976,0.00018404341,0.00055166724,0.00061885314],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000068771566,0.000065701686,0.00095937884,0.00032897308,0.00008739251,0.00032718308,0.0001263039,0.7645219,0.14638041,0.05395205,0.0013966575,0.031785287],"study_design_scores_gemma":[0.0000037032933,0.00004349161,0.00021564894,0.000009785868,0.000010183053,0.00007142436,0.000010990363,0.9820524,0.011749783,0.0025112417,0.0033155123,0.000005932329],"about_ca_topic_score_codex":0.0019996758,"about_ca_topic_score_gemma":0.002300447,"teacher_disagreement_score":0.0019996758,"about_ca_system_score_codex":0.0011368224,"about_ca_system_score_gemma":0.0006760445,"threshold_uncertainty_score":0.00824827},"labels":[],"label_agreement":null},{"id":"W2107751407","doi":"10.1109/ted.2004.837389","title":"Electrical Characterization of Polymer-Based FETs Fabricated by Spin-Coating Poly(3-alkylthiophene)s","year":2004,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Organic Electronics and Photovoltaics","field":"Engineering","cited_by":60,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Simon Fraser University; McMaster University","funders":"","keywords":"Thin-film transistor; Materials science; Dopant; Spin coating; Subthreshold conduction; Optoelectronics; Subthreshold slope; Threshold voltage; Polymer; Electron mobility; Coating; Transistor; Doping; Equivalent series resistance; Field-effect transistor; Layer (electronics); Voltage; Composite material; Electrical engineering","score_opus":0.005557771822796633,"score_gpt":0.2100609144899498,"score_spread":0.20450314266715316,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2107751407","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9948106,0.00045830043,0.0037264891,0.000030665484,0.000022290005,0.000010566201,0.00025034038,0.00008164698,0.0006091379],"genre_scores_gemma":[0.9960687,0.00031693745,0.0025045269,0.000017749027,0.000007772818,0.000010885924,0.00015837997,0.000014624157,0.00090053614],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999157,0.000005770327,0.0000047532685,0.000021645199,0.000031258896,0.00002091961],"domain_scores_gemma":[0.9997056,0.0001593035,0.00003373792,0.00002669029,0.000052439565,0.000022181348],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000102236656,0.0001672853,0.00023338561,0.00023192445,0.00014601425,0.00020738637,0.00021628593,0.000281858,0.0008504692],"category_scores_gemma":[0.00037367575,0.00009174736,0.00015277373,0.00026758257,0.00017995283,0.0002769579,0.000076634686,0.00021311929,0.0001916269],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00004935513,0.000011180825,0.0003676992,0.000033393597,0.0000071927566,0.00007854876,0.000029200648,0.00031630674,0.9972932,0.00006453478,0.000029653276,0.0017197179],"study_design_scores_gemma":[0.000007955865,0.0002102563,0.009508426,0.000008771598,0.000021254766,0.00016464615,0.000029088971,0.0052766064,0.9840636,0.00006824187,0.00063363696,0.0000074564723],"about_ca_topic_score_codex":0.00072562404,"about_ca_topic_score_gemma":0.0011857378,"teacher_disagreement_score":0.0008504692,"about_ca_system_score_codex":0.00018208635,"about_ca_system_score_gemma":0.00008820757,"threshold_uncertainty_score":0.0028451085},"labels":[],"label_agreement":null},{"id":"W2107985063","doi":"10.1109/ted.2003.818156","title":"Above-threshold parameter extraction and modeling for amorphous silicon thin-film transistors","year":2003,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":127,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Thin-film transistor; Amorphous silicon; Materials science; Threshold voltage; Optoelectronics; Transistor; Extraction (chemistry); Saturation (graph theory); Amorphous solid; Fabrication; Silicon; Electron mobility; Band gap; Contact resistance; Oxide thin-film transistor; Electronic engineering; Voltage; Layer (electronics); Crystalline silicon; Electrical engineering; Nanotechnology; Engineering","score_opus":0.017928914903172742,"score_gpt":0.24111920915638876,"score_spread":0.22319029425321602,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2107985063","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.11548708,0.0016113567,0.87356883,0.00019434864,0.00005170957,0.000114989525,0.0007369527,0.0012259082,0.0070087756],"genre_scores_gemma":[0.90494525,0.0020324034,0.086531825,0.000055180557,0.00004576348,0.0002578984,0.0006695952,0.00022022978,0.0052418425],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9998516,0.000016724687,0.000009462436,0.00002092475,0.00008717748,0.0000142110575],"domain_scores_gemma":[0.99985206,0.00006814887,0.000021957589,0.000023140581,0.000029586217,0.0000051476086],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00016736062,0.00064016075,0.00046487706,0.00045816723,0.0002904318,0.0004900038,0.0009552081,0.00067346287,0.0010061316],"category_scores_gemma":[0.00074068416,0.00031431566,0.00069635606,0.00034510018,0.00025150648,0.0008958529,0.00021441885,0.00047303975,0.00047678984],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000058294645,0.00003836892,0.0010348317,0.00020597749,0.000050210678,0.00043964747,0.00017040133,0.8181742,0.14536874,0.0117567945,0.0006950375,0.022007484],"study_design_scores_gemma":[0.000006067711,0.000032088334,0.00029374182,0.000011982921,0.000013229952,0.000096220174,0.00001804554,0.9737483,0.020240648,0.003436614,0.0020934232,0.000009612308],"about_ca_topic_score_codex":0.003148509,"about_ca_topic_score_gemma":0.002749525,"teacher_disagreement_score":0.003148509,"about_ca_system_score_codex":0.0006454819,"about_ca_system_score_gemma":0.00052393,"threshold_uncertainty_score":0.0062603354},"labels":[],"label_agreement":null},{"id":"W2109163158","doi":"10.1109/ted.2007.910615","title":"Simulation of a Low-Voltage Organic Transistor Compatible With Printing Methods","year":2008,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Organic Electronics and Photovoltaics","field":"Engineering","cited_by":24,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of British Columbia","funders":"","keywords":"Organic field-effect transistor; Materials science; Transistor; Semiconductor; Organic semiconductor; Optoelectronics; Amorphous solid; Electronic circuit; Layer (electronics); Field-effect transistor; Voltage; Nanotechnology; Electrical engineering; Chemistry; Organic chemistry","score_opus":0.012415116643606066,"score_gpt":0.25125929113437095,"score_spread":0.2388441744907649,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2109163158","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.90241003,0.0003752313,0.02881613,0.0013012443,0.0001604734,0.000118002354,0.0019116766,0.00047925665,0.06442793],"genre_scores_gemma":[0.98521125,0.00018822037,0.007708212,0.00013333898,0.000017115617,0.0001486382,0.0006040032,0.00004065186,0.0059483983],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9998745,0.000020569325,0.000004027895,0.000018020724,0.000044043103,0.00003881648],"domain_scores_gemma":[0.99947816,0.00032103757,0.000037821213,0.000025732737,0.000090544345,0.000046718906],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00016844897,0.00039979277,0.0005350135,0.0003386209,0.00064930733,0.0006677875,0.0008909039,0.0017412001,0.0067825723],"category_scores_gemma":[0.0010073881,0.00026108575,0.0007088319,0.00066902523,0.0005368548,0.00047974772,0.0003567007,0.00062824006,0.00044393667],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000049784143,0.000027716238,0.0006534823,0.00003916821,0.000015484275,0.00016246157,0.000031915497,0.99389243,0.001988927,0.0017853612,0.00038152633,0.00097166904],"study_design_scores_gemma":[0.000019968571,0.000026318827,0.00021130344,0.0000048181655,0.000005614005,0.000013867329,0.000018568237,0.9981489,0.00066488725,0.00040109496,0.00047978718,0.0000048346346],"about_ca_topic_score_codex":0.015954735,"about_ca_topic_score_gemma":0.008658819,"teacher_disagreement_score":0.015954735,"about_ca_system_score_codex":0.0011398558,"about_ca_system_score_gemma":0.0011369403,"threshold_uncertainty_score":0.031723738},"labels":[],"label_agreement":null},{"id":"W2109212063","doi":"10.1109/ted.2008.925148","title":"Ultralow Temperature Processing and Integration of Dielectric Resonators on Silicon Substrates for System-on-Chip Applications","year":2008,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Microwave Dielectric Ceramics Synthesis","field":"Engineering","cited_by":6,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Queen's University; Royal Military College of Canada","funders":"","keywords":"Materials science; Dielectric; Ceramic; Silicon; Recrystallization (geology); Grain boundary; Resonator; Dielectric resonator; Temperature coefficient; Microstructure; Optoelectronics; Electronic engineering; Composite material; Engineering","score_opus":0.008626649605692302,"score_gpt":0.21488953091458285,"score_spread":0.20626288130889053,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2109212063","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.8655503,0.0017343789,0.12181159,0.0001703538,0.00019052104,0.000097345,0.00038928716,0.0008439517,0.009212227],"genre_scores_gemma":[0.9000752,0.0009518975,0.09232418,0.00004895084,0.000037419868,0.00007036616,0.00063796336,0.00014701344,0.005706983],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998816,0.000011098907,0.0000070205374,0.000030839998,0.00004856757,0.000020860543],"domain_scores_gemma":[0.999877,0.00002563159,0.000023899063,0.000019872648,0.00004162454,0.000011966575],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000119028686,0.00023963797,0.0002040019,0.00013474238,0.00012252729,0.000289355,0.00048353948,0.00025430426,0.0011958891],"category_scores_gemma":[0.00024083821,0.00021567369,0.0002431408,0.00018429926,0.00013613392,0.00035344283,0.00026860114,0.0003753595,0.0006159117],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000017542254,0.000006631097,0.00006874394,0.000032390715,0.000003860857,0.000029758903,0.000011957588,0.00019293674,0.99680954,0.0001837127,0.00008768618,0.0025552083],"study_design_scores_gemma":[0.000009513768,0.00014999518,0.001164417,0.0000027566637,0.000011317755,0.00012795358,0.00001778547,0.00435265,0.99038905,0.00007870913,0.0036890558,0.000006736442],"about_ca_topic_score_codex":0.00038015007,"about_ca_topic_score_gemma":0.0011257167,"teacher_disagreement_score":0.0011958891,"about_ca_system_score_codex":0.0002892171,"about_ca_system_score_gemma":0.0002309881,"threshold_uncertainty_score":0.004000604},"labels":[],"label_agreement":null},{"id":"W2109589489","doi":"10.1109/ted.2007.915085","title":"Physical Model of Noise Mechanisms in SOI and Bulk-Silicon MOSFETs for RF Applications","year":2008,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Radio Frequency Integrated Circuit Design","field":"Engineering","cited_by":19,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Hatch (Canada)","funders":"","keywords":"Silicon on insulator; Shot noise; Transconductance; Noise (video); Impact ionization; Optoelectronics; Flicker noise; Materials science; Noise generator; Burst noise; Y-factor; MOSFET; Noise power; Noise temperature; Voltage; Electrical engineering; Silicon; Noise figure; Transistor; Physics; Engineering; CMOS; Ionization; Power (physics); Phase noise; Computer science","score_opus":0.015752506495484198,"score_gpt":0.23032289965784122,"score_spread":0.21457039316235701,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2109589489","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.09108615,0.00490301,0.86749864,0.000690015,0.00030414027,0.0001862448,0.00055157597,0.0009417024,0.033838425],"genre_scores_gemma":[0.93569857,0.0040181186,0.041590646,0.00024397924,0.00016896306,0.00034882527,0.00035978787,0.00014711394,0.017423939],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9998068,0.000026954223,0.000008363289,0.00003748846,0.00010129918,0.00001916539],"domain_scores_gemma":[0.999869,0.000053702,0.00001877888,0.000014769121,0.000036577323,0.0000071016316],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00023871075,0.00078446965,0.0005740498,0.0004784338,0.00038386515,0.0005895908,0.0012835052,0.0009923436,0.0012797364],"category_scores_gemma":[0.0004937476,0.00025231758,0.00064615865,0.00032194564,0.00053069816,0.0009632353,0.0002532568,0.0004415797,0.0006427927],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00011841918,0.00009044685,0.0014988078,0.0005079842,0.000075855736,0.00062313286,0.00031568433,0.749259,0.10933422,0.11719218,0.0022900812,0.018694142],"study_design_scores_gemma":[0.0000074990207,0.000074986165,0.00039819747,0.000018764214,0.000017934864,0.00017705448,0.000017523029,0.9811076,0.0027406462,0.013029469,0.0023981724,0.000012136968],"about_ca_topic_score_codex":0.0013160838,"about_ca_topic_score_gemma":0.0012983159,"teacher_disagreement_score":0.0013160838,"about_ca_system_score_codex":0.00071628974,"about_ca_system_score_gemma":0.0004805333,"threshold_uncertainty_score":0.005197048},"labels":[],"label_agreement":null},{"id":"W2110567646","doi":"10.1109/ted.2006.873843","title":"Three-dimensional modeling and simulation of p-n junction spherical silicon solar cells","year":2006,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"solar cell performance optimization","field":"Engineering","cited_by":32,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Morgan Solar (Canada); University of Waterloo","funders":"","keywords":"Materials science; Spherical geometry; Silicon; Fabrication; Solar cell; Photovoltaic system; Spherical model; Optoelectronics; Energy conversion efficiency; Quantum efficiency; Computer simulation; Spherical shell; Voltage; Spherical cap; Geometry; Physics; Mechanics; Electrical engineering; Engineering; Condensed matter physics","score_opus":0.007385828608175575,"score_gpt":0.20338251290248754,"score_spread":0.19599668429431197,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2110567646","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.52192706,0.00055152894,0.42810798,0.0007331567,0.000136469,0.00017949224,0.0011137038,0.00076420914,0.04648652],"genre_scores_gemma":[0.96133125,0.00033948853,0.033086352,0.00010022139,0.000016094253,0.0002283049,0.00036145825,0.000064177475,0.0044726753],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9998517,0.000031352698,0.0000069129765,0.000015669555,0.00007216889,0.00002219517],"domain_scores_gemma":[0.9997688,0.00009753822,0.000024760053,0.000025411335,0.000058284124,0.0000252271],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0002250519,0.00029789,0.0006169889,0.00026738414,0.0005365236,0.00078391895,0.0010257805,0.0012398515,0.00163697],"category_scores_gemma":[0.00070418743,0.00026850562,0.00079716207,0.00054291025,0.00057933637,0.00048305088,0.0004196883,0.00043115285,0.00026902734],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000012881207,0.000011344763,0.00025026934,0.000011483693,0.000005434537,0.00005044433,0.000021865832,0.9952029,0.00158791,0.0018757451,0.00010845145,0.00086121785],"study_design_scores_gemma":[0.0000034922818,0.000006117104,0.00006795953,0.0000011675588,0.0000015277628,0.0000094449915,0.0000067605,0.99908066,0.00034000643,0.00023388743,0.00024572609,0.0000032220273],"about_ca_topic_score_codex":0.012726176,"about_ca_topic_score_gemma":0.0062541286,"teacher_disagreement_score":0.012726176,"about_ca_system_score_codex":0.00093194575,"about_ca_system_score_gemma":0.00095836306,"threshold_uncertainty_score":0.025304198},"labels":[],"label_agreement":null},{"id":"W2111013026","doi":"10.1109/16.848285","title":"Time dependent breakdown of ultrathin gate oxide","year":2000,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Semiconductor materials and devices","field":"Engineering","cited_by":62,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Advanced Micro Devices (Canada)","funders":"","keywords":"Time-dependent gate oxide breakdown; Materials science; Gate oxide; Dielectric strength; Oxide; Electric field; Condensed matter physics; Dielectric; Dipole; Electrical engineering; Analytical Chemistry (journal); Voltage; Optoelectronics; Physics; Chemistry; Transistor","score_opus":0.005304018404544097,"score_gpt":0.1999673098684662,"score_spread":0.1946632914639221,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2111013026","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9985667,0.0002442468,0.00071055675,0.000007656023,0.0000044296894,0.0000030552285,0.0000987655,0.000014355098,0.00035033113],"genre_scores_gemma":[0.9986558,0.00015457762,0.000495771,0.00001020876,0.0000022083384,0.0000044323674,0.00015244476,0.000007061455,0.000517441],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999268,0.0000048051666,0.0000032823211,0.00001671901,0.00002486563,0.000023380695],"domain_scores_gemma":[0.99979335,0.000059744172,0.00004835846,0.00001582577,0.000058670026,0.000024090834],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00009372677,0.00018613985,0.00013354272,0.00016171194,0.000116398725,0.0001808273,0.00015667506,0.00016340923,0.0011476524],"category_scores_gemma":[0.00026110094,0.000106312524,0.0001422828,0.00015071765,0.00014599907,0.00021247042,0.00015769183,0.00022718887,0.00011608061],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0000980669,0.000006761139,0.0014552496,0.000035020727,0.00000995241,0.00007969004,0.000033606208,0.000283016,0.99614197,0.000042772488,0.00003118696,0.0017826902],"study_design_scores_gemma":[0.000005900383,0.0005253084,0.023100378,0.0000073585675,0.000015404115,0.000264556,0.000054380547,0.0022099032,0.97275555,0.00007054204,0.0009824185,0.000008286908],"about_ca_topic_score_codex":0.00063172914,"about_ca_topic_score_gemma":0.0005828503,"teacher_disagreement_score":0.0011476524,"about_ca_system_score_codex":0.00023332264,"about_ca_system_score_gemma":0.00008556987,"threshold_uncertainty_score":0.003839314},"labels":[],"label_agreement":null},{"id":"W2111213652","doi":"10.1109/ted.2003.813241","title":"Effects of hot-carrier stress on the performance of the lc-tank cmos oscillators","year":2003,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Radio Frequency Integrated Circuit Design","field":"Engineering","cited_by":56,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McMaster University","funders":"CMC Microsystems","keywords":"Oscillation (cell signaling); CMOS; Materials science; Stress (linguistics); Amplitude; Noise (video); Phase noise; LC circuit; Optoelectronics; Electrical engineering; Degradation (telecommunications); Voltage; Physics; Engineering; Capacitor; Chemistry; Optics; Computer science","score_opus":0.00556460967544677,"score_gpt":0.1884604072520457,"score_spread":0.1828957975765989,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2111213652","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99813443,0.0003357835,0.0010138327,0.000042203086,0.000023248353,0.0000061764176,0.000093549075,0.00005576622,0.00029511758],"genre_scores_gemma":[0.9992182,0.00011935295,0.00028493154,0.00001580076,0.000011502875,0.000004684167,0.00006653003,0.000017307182,0.00026163677],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9996884,0.000037986825,0.000032658398,0.000049399787,0.00010235825,0.00008927948],"domain_scores_gemma":[0.99822074,0.0007939428,0.00039433653,0.00013257381,0.0003265257,0.00013181337],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00025478526,0.0004957951,0.00051005126,0.0001771825,0.00024360119,0.0003519504,0.00026579786,0.0004217341,0.0014132801],"category_scores_gemma":[0.0014685126,0.00018599667,0.00019576354,0.00025882095,0.00026938258,0.00052729115,0.0002849944,0.00028426253,0.00029168135],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0007788028,0.000049284015,0.0019415518,0.00009977515,0.00003588567,0.00033596615,0.00014463291,0.0036227677,0.9883514,0.00006271382,0.000076606775,0.0045005567],"study_design_scores_gemma":[0.000045214227,0.003721325,0.012033975,0.000017789062,0.00011802887,0.00043927526,0.00011458148,0.010664577,0.9721142,0.00011486529,0.0005818461,0.000034363267],"about_ca_topic_score_codex":0.0005403836,"about_ca_topic_score_gemma":0.0008697444,"teacher_disagreement_score":0.0014132801,"about_ca_system_score_codex":0.0002469881,"about_ca_system_score_gemma":0.0002152624,"threshold_uncertainty_score":0.0047279},"labels":[],"label_agreement":null},{"id":"W2112551460","doi":"10.1109/ted.2005.850637","title":"Accurate Modeling and Parameter Extraction for Meander-Line N-Well Resistors","year":2005,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Radio Frequency Integrated Circuit Design","field":"Engineering","cited_by":16,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McMaster University","funders":"CMC Microsystems","keywords":"Resistor; Equivalent circuit; Inductor; Electronic engineering; Meander (mathematics); Scalability; Electrical impedance; Distributed element model; Finite element method; Engineering; Computer science; Electrical engineering; Mathematics; Voltage; Structural engineering; Geometry","score_opus":0.026777354880300377,"score_gpt":0.26554754394103597,"score_spread":0.2387701890607356,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2112551460","genre_codex":"methods","genre_gemma":"methods","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"methods","genre_consensus":"methods","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.040257424,0.00040353884,0.95117915,0.00010887322,0.00002646028,0.00009326143,0.00043257512,0.0015966672,0.005901973],"genre_scores_gemma":[0.57174027,0.0009311487,0.41855818,0.00006216351,0.00003884536,0.000585735,0.00081081106,0.00045618042,0.0068167024],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99961483,0.00006330976,0.000019607833,0.00006795236,0.00020670563,0.000027408958],"domain_scores_gemma":[0.9997408,0.00007891677,0.000035860296,0.00008628779,0.000051526567,0.00000670733],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00032974945,0.001191381,0.00093483925,0.00041162866,0.00032728742,0.0006683198,0.0016040441,0.0008427146,0.0018703341],"category_scores_gemma":[0.0011202508,0.00062083843,0.00095761963,0.00045894744,0.00024649478,0.0020687545,0.00042952425,0.0005858637,0.001336968],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000061413375,0.00005638156,0.0005946876,0.000236101,0.00006581383,0.00033622835,0.00015799695,0.7243598,0.21286616,0.019563012,0.0016097978,0.040092617],"study_design_scores_gemma":[0.0000142997305,0.00008711121,0.00029151552,0.000017353275,0.000022662894,0.00015103735,0.000022358805,0.954414,0.033685382,0.005084773,0.006184832,0.00002461341],"about_ca_topic_score_codex":0.0012104495,"about_ca_topic_score_gemma":0.002305634,"teacher_disagreement_score":0.0018703341,"about_ca_system_score_codex":0.00077014277,"about_ca_system_score_gemma":0.00066715677,"threshold_uncertainty_score":0.0062568784},"labels":[],"label_agreement":null},{"id":"W2116326546","doi":"10.1109/ted.2008.922856","title":"A Statistical Reliability Model for Single-Electron Threshold Logic","year":2008,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Semiconductor materials and devices","field":"Engineering","cited_by":18,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Windsor","funders":"","keywords":"NAND logic; Logic gate; Digital electronics; Reliability (semiconductor); NAND gate; Computer science; AND-OR-Invert; Pass transistor logic; AND gate; Electronic engineering; Set (abstract data type); Logic synthesis; NOR gate; Logic optimization; Reliability engineering; Computer engineering; Electronic circuit; Power (physics); Algorithm; Engineering; Electrical engineering; Physics","score_opus":0.036356871965358514,"score_gpt":0.25852431966920447,"score_spread":0.22216744770384594,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2116326546","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.040763583,0.0018241837,0.9429926,0.0011123847,0.00012461802,0.0001069422,0.00061779027,0.0006178079,0.011840026],"genre_scores_gemma":[0.9191612,0.0030084788,0.052861955,0.0005207384,0.0003674653,0.00060146995,0.00089464674,0.00027188766,0.022312079],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99915373,0.00020404786,0.000044895194,0.00014208203,0.00033632628,0.00011887327],"domain_scores_gemma":[0.99776316,0.0012829595,0.00028232377,0.00013574118,0.00047208785,0.00006362911],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0015795737,0.00089905574,0.0011720815,0.0012642586,0.00049348455,0.0012192746,0.0022196928,0.0016532243,0.0030268533],"category_scores_gemma":[0.004667375,0.00059134554,0.0011362648,0.0011247247,0.0010413264,0.0018555985,0.0005248312,0.0012626546,0.0010243356],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000034865352,0.00003277296,0.00063246867,0.00007176591,0.00003939437,0.00020381853,0.000070070906,0.8724244,0.0025969893,0.11664622,0.0015325006,0.0057147746],"study_design_scores_gemma":[0.0000036735637,0.000014258197,0.00011328141,0.0000035003045,0.0000075807084,0.00004194575,0.0000044433764,0.98521096,0.00012913808,0.014115387,0.00034970816,0.0000062972563],"about_ca_topic_score_codex":0.005099729,"about_ca_topic_score_gemma":0.0029266067,"teacher_disagreement_score":0.005099729,"about_ca_system_score_codex":0.0014156819,"about_ca_system_score_gemma":0.0011771511,"threshold_uncertainty_score":0.010271549},"labels":[],"label_agreement":null},{"id":"W2120551123","doi":"10.1109/ted.2006.881012","title":"Equivalent Circuit Description of Threshold Voltage Shift in a-Si:H TFTs From a Probabilistic Analysis of Carrier Population Dynamics","year":2006,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":11,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Thin-film transistor; Threshold voltage; Probabilistic logic; Amorphous silicon; Population; Optoelectronics; Transistor; Biasing; Electronic circuit; Materials science; Logic gate; Electrical engineering; Electronic engineering; Computer science; Voltage; Engineering; Silicon; Nanotechnology; Artificial intelligence","score_opus":0.013263610191436433,"score_gpt":0.21538362012513626,"score_spread":0.20212000993369983,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2120551123","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.04043742,0.00043814542,0.94429904,0.0004157999,0.0000819768,0.00008313016,0.00071597274,0.00092591933,0.012602616],"genre_scores_gemma":[0.93714446,0.00055989414,0.047351718,0.0002002546,0.00007017133,0.000257777,0.00037084607,0.00012176233,0.013923052],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9998826,0.000020551688,0.000007169041,0.000026599413,0.000049924864,0.000013191797],"domain_scores_gemma":[0.9998079,0.00011417149,0.000019179288,0.000017079492,0.000036498117,0.000005206279],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00021969683,0.00046622497,0.00034409083,0.00029481066,0.0002897929,0.0005122938,0.0010053876,0.0011704866,0.0036115455],"category_scores_gemma":[0.0006614519,0.00020424364,0.0006888223,0.00024368246,0.0002934338,0.00080621074,0.00018039401,0.00049415085,0.0005294182],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00004375983,0.00003228882,0.00039540272,0.00008280069,0.000030665953,0.00023266961,0.00008383465,0.93324405,0.025814362,0.023988657,0.001139849,0.014911602],"study_design_scores_gemma":[0.000002580355,0.000009053834,0.000057014182,0.0000022947022,0.000004379643,0.000022508328,0.000002653289,0.99713707,0.0007839298,0.0015828387,0.00039360859,0.0000020768762],"about_ca_topic_score_codex":0.0033538963,"about_ca_topic_score_gemma":0.003351285,"teacher_disagreement_score":0.0036115455,"about_ca_system_score_codex":0.00092531694,"about_ca_system_score_gemma":0.0002926147,"threshold_uncertainty_score":0.012081802},"labels":[],"label_agreement":null},{"id":"W2121108957","doi":"10.1109/ted.2002.805605","title":"A new model for avalanche build-up of carriers in a SAGCM avalanche photodiode","year":2002,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Semiconductor Quantum Structures and Devices","field":"Physics and Astronomy","cited_by":7,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McMaster University","funders":"Hong Kong University of Science and Technology","keywords":"Avalanche photodiode; Single-photon avalanche diode; Impact ionization; Avalanche breakdown; Avalanche diode; Optoelectronics; Charge carrier; Physics; Ionization; Materials science; Optics; Breakdown voltage; Voltage; Detector; Quantum mechanics","score_opus":0.020767856967467222,"score_gpt":0.2617161488237025,"score_spread":0.24094829185623526,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2121108957","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.07180952,0.0009319254,0.91148293,0.0005020167,0.000121482524,0.00011821895,0.00017864219,0.00049384934,0.014361398],"genre_scores_gemma":[0.8478819,0.0014877475,0.100536615,0.00037481397,0.00012844727,0.0005924726,0.0002466273,0.00026176166,0.048489608],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9996929,0.000050655293,0.000010238112,0.000058159883,0.00013587718,0.00005212946],"domain_scores_gemma":[0.99965525,0.00013173066,0.000038746217,0.00004608561,0.00010441474,0.000023874176],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00052073714,0.0006282263,0.0005688805,0.0006095977,0.0003836003,0.0007031189,0.0020146556,0.0017177435,0.0031619994],"category_scores_gemma":[0.0011656248,0.00040390948,0.0007667044,0.0004183053,0.0007181314,0.00212485,0.00053912983,0.0010977425,0.00087647437],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00015911263,0.00010820705,0.001281688,0.00020191038,0.00006418936,0.0006265424,0.0003246648,0.6905955,0.101088606,0.18546696,0.0017073574,0.018375238],"study_design_scores_gemma":[0.0000124343915,0.000038186972,0.0001951856,0.0000057895145,0.000009340805,0.00016011628,0.000012857762,0.98242515,0.0028289508,0.012007652,0.0022932768,0.000011093983],"about_ca_topic_score_codex":0.0018292058,"about_ca_topic_score_gemma":0.0010561374,"teacher_disagreement_score":0.0031619994,"about_ca_system_score_codex":0.0010344047,"about_ca_system_score_gemma":0.00050087745,"threshold_uncertainty_score":0.010577917},"labels":[],"label_agreement":null},{"id":"W2122876757","doi":"10.1109/ted.2003.811392","title":"Modeling and optimization of resonant cavity enhanced-separated absorption graded charge multiplication-avalanche photodetector (RCE-SAGCM-APD)","year":2003,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Photonic and Optical Devices","field":"Engineering","cited_by":25,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McMaster University","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Photodetector; Spice; Avalanche photodiode; Multiplication (music); Optoelectronics; Inductance; Absorption (acoustics); Materials science; Inductor; Bandwidth (computing); Equivalent series resistance; Capacitance; Optics; Physics; Electronic engineering; Voltage; Computer science; Telecommunications; Engineering; Detector; Acoustics","score_opus":0.011104001217795268,"score_gpt":0.2297460845352172,"score_spread":0.21864208331742194,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2122876757","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.15931965,0.0018923515,0.81402045,0.0006078701,0.00008746432,0.00023191402,0.00073939905,0.0014214079,0.02167936],"genre_scores_gemma":[0.9012663,0.000890973,0.09003598,0.000113660055,0.00001692181,0.00026456837,0.00026798664,0.00012663259,0.007017006],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9997762,0.000027284825,0.000006253369,0.000043671687,0.000123017,0.000023630868],"domain_scores_gemma":[0.9999021,0.00003191614,0.00001735464,0.000016460324,0.00002681114,0.000005233443],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0001890664,0.0005557723,0.0004850807,0.00025846635,0.00023462523,0.0006797098,0.0016026892,0.00075337506,0.001501461],"category_scores_gemma":[0.00035089807,0.0003330666,0.00066264026,0.0002927696,0.00033842665,0.0008443668,0.0003984863,0.00044840682,0.0004589481],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00012001905,0.000080872065,0.0011732912,0.00041256967,0.00010598494,0.00040138423,0.00013874656,0.8050802,0.16035692,0.013893142,0.0011199377,0.017116912],"study_design_scores_gemma":[0.000013742618,0.00005929079,0.0002933432,0.000011144862,0.000018590481,0.00012319737,0.000013537741,0.9753666,0.020090446,0.0011919105,0.002806787,0.00001150319],"about_ca_topic_score_codex":0.0018626072,"about_ca_topic_score_gemma":0.002097489,"teacher_disagreement_score":0.0018626072,"about_ca_system_score_codex":0.0013550415,"about_ca_system_score_gemma":0.0007327945,"threshold_uncertainty_score":0.009831548},"labels":[],"label_agreement":null},{"id":"W2123140212","doi":"10.1109/ted.2004.841224","title":"Study of CMOS APS responsivity enhancement: ring-shaped photodiode","year":2004,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"CCD and CMOS Imaging Sensors","field":"Engineering","cited_by":4,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Calgary","funders":"","keywords":"Photodiode; Responsivity; CMOS; Pixel; Sensitivity (control systems); Optoelectronics; CMOS sensor; Materials science; RADIUS; Optics; Wavelength; Image sensor; Ring (chemistry); Physics; Photodetector; Electronic engineering; Computer science; Engineering; Chemistry","score_opus":0.011095653001364912,"score_gpt":0.2439830655386257,"score_spread":0.23288741253726078,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2123140212","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9192501,0.0027396753,0.07451012,0.00012313716,0.00003701266,0.000031963773,0.000057266065,0.00030327018,0.002947439],"genre_scores_gemma":[0.97664547,0.0006314003,0.021716598,0.000029385461,0.000011532132,0.000010526183,0.000020542042,0.000018134928,0.0009164161],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9997938,0.000043697746,0.0000067615333,0.000058589987,0.00007481904,0.000022216649],"domain_scores_gemma":[0.9996008,0.00018912513,0.000045606197,0.000037608883,0.000110472574,0.00001638418],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00032592457,0.00026286612,0.00035192526,0.0001243064,0.00008552402,0.00022798241,0.00046111134,0.00031078974,0.0005020059],"category_scores_gemma":[0.0007873234,0.00015607296,0.00024274888,0.00017847386,0.00018786745,0.00036000184,0.0001601185,0.00020860485,0.00022610709],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000112772716,0.000019620691,0.000780388,0.00013824597,0.00002071279,0.00020861602,0.00007510914,0.005376716,0.9851976,0.0007737466,0.000061348845,0.007235117],"study_design_scores_gemma":[0.000011878881,0.00028892973,0.0017685477,0.000010548089,0.0000314658,0.0004526381,0.000039029142,0.056469675,0.9393794,0.00023132992,0.0013057794,0.000010807544],"about_ca_topic_score_codex":0.00029253913,"about_ca_topic_score_gemma":0.0001781809,"teacher_disagreement_score":0.0005020059,"about_ca_system_score_codex":0.0003498579,"about_ca_system_score_gemma":0.00011856515,"threshold_uncertainty_score":0.0025384426},"labels":[],"label_agreement":null},{"id":"W2123757351","doi":"10.1109/ted.2011.2109961","title":"Fin- and Island-Isolated AlGaN/GaN HFETs","year":2011,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":19,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Concordia University","funders":"CMC Microsystems","keywords":"Transconductance; Materials science; Optoelectronics; Threshold voltage; Transistor; Heterojunction; Voltage; Electrical engineering; Engineering","score_opus":0.015221579729899267,"score_gpt":0.2326695754073626,"score_spread":0.21744799567746334,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2123757351","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9986002,0.00013080575,0.0002914022,0.000009999546,0.00001482108,0.0000050051663,0.0001520621,0.000018750545,0.00077703065],"genre_scores_gemma":[0.99738437,0.00011219593,0.0010207638,0.00001894869,0.00000908628,0.000012393762,0.00020898702,0.000015008928,0.0012182982],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99987435,0.000007164594,0.000008130435,0.000042197298,0.000028747421,0.00003944069],"domain_scores_gemma":[0.9997695,0.000066492816,0.000043107277,0.000034759876,0.000050865696,0.00003521966],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00009521859,0.00022576867,0.00023480918,0.00015673168,0.00014491557,0.0002772432,0.00035243676,0.00028279956,0.0016930196],"category_scores_gemma":[0.0002656889,0.00012807253,0.00017942667,0.0001993315,0.00014943205,0.0003306154,0.00018618032,0.0001758091,0.00020013307],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00025692474,0.00004881346,0.00070770783,0.000052135296,0.000030148856,0.00012175229,0.00004321805,0.00076955615,0.99527454,0.00012348882,0.00011082755,0.0024609645],"study_design_scores_gemma":[0.00004392147,0.0009944242,0.011340847,0.00000903044,0.000052198946,0.00022685328,0.00010767214,0.0050574285,0.9809395,0.00007871222,0.0011338425,0.000015668467],"about_ca_topic_score_codex":0.00087252184,"about_ca_topic_score_gemma":0.0019329699,"teacher_disagreement_score":0.0016930196,"about_ca_system_score_codex":0.00030810008,"about_ca_system_score_gemma":0.00011464265,"threshold_uncertainty_score":0.005663693},"labels":[],"label_agreement":null},{"id":"W2124176512","doi":"10.1109/ted.2008.2003027","title":"Thermodynamics and Transport Model of Charge Injection in Silicon Irradiated by a Pulsed Focused Laser","year":2008,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Silicon and Solar Cell Technologies","field":"Engineering","cited_by":2,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Polytechnique Montréal","funders":"Canada Research Chairs; CMC Microsystems","keywords":"Laser; Materials science; Laser power scaling; Silicon; Ring oscillator; Optoelectronics; Atomic physics; Physics; Optics","score_opus":0.010339245390348377,"score_gpt":0.19512364613490193,"score_spread":0.18478440074455355,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2124176512","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.56933564,0.001860196,0.38840562,0.0014415781,0.00020380641,0.00020868768,0.00071344915,0.00043821626,0.037392855],"genre_scores_gemma":[0.97519356,0.00071319635,0.008288981,0.00010714562,0.000044422333,0.0002185285,0.00018480752,0.00008800078,0.015161485],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99982905,0.000023941351,0.000008642698,0.000032225827,0.000067222834,0.000038854945],"domain_scores_gemma":[0.99976784,0.000103383274,0.000031844123,0.00002210845,0.000055294193,0.000019536183],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00044171268,0.0004279783,0.00081034517,0.0007426611,0.00065953826,0.0007438627,0.0011879887,0.0010998364,0.0021714051],"category_scores_gemma":[0.0008720917,0.00044250442,0.00094503944,0.00043297352,0.0012123539,0.0013198,0.0005319037,0.00056539936,0.00036219863],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000079723606,0.000102966056,0.0010364333,0.00012820799,0.000037753336,0.0003389619,0.00021060275,0.8419401,0.053484663,0.099429354,0.00045888926,0.0027522792],"study_design_scores_gemma":[0.0000085512465,0.000016124393,0.00026365038,0.00000436575,0.000007207212,0.000028928078,0.000010621777,0.99275947,0.0017607772,0.004945322,0.00018611253,0.000008751928],"about_ca_topic_score_codex":0.0079630045,"about_ca_topic_score_gemma":0.0033280808,"teacher_disagreement_score":0.0079630045,"about_ca_system_score_codex":0.0019464021,"about_ca_system_score_gemma":0.0013374597,"threshold_uncertainty_score":0.015833318},"labels":[],"label_agreement":null},{"id":"W2124693169","doi":"10.1109/ted.2003.809029","title":"UV-responsive CCD image sensors with enhanced inorganic phosphor coatings","year":2003,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"CCD and CMOS Imaging Sensors","field":"Engineering","cited_by":26,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Dalsa Corporation; University of Waterloo","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Phosphor; Materials science; Optoelectronics; Coating; Ultraviolet; Irradiation; Absorption (acoustics); Laser; Radiation; Degradation (telecommunications); Optics; Nanotechnology; Electronic engineering; Composite material","score_opus":0.0037047170403858775,"score_gpt":0.20046497109599729,"score_spread":0.1967602540556114,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2124693169","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.8503221,0.003917742,0.13255581,0.0002727005,0.00022708057,0.00017898025,0.00056243176,0.0020959773,0.009867059],"genre_scores_gemma":[0.7902863,0.0019272628,0.19383588,0.00045044158,0.00007375528,0.0001724962,0.0004858369,0.000121028264,0.012646985],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9996124,0.000038735023,0.000019041743,0.00010513056,0.00018809985,0.000036586316],"domain_scores_gemma":[0.9997528,0.000040733146,0.000062991705,0.000015500507,0.00010489885,0.000023039835],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00023888811,0.00044882187,0.00031659988,0.00023583589,0.00011748697,0.00042564512,0.00074159814,0.0006455268,0.0008442433],"category_scores_gemma":[0.0005272037,0.0003362723,0.00022903825,0.00030528544,0.00025848876,0.00045634893,0.00026836255,0.00040452776,0.00041372408],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000026909,0.000012071379,0.00011076165,0.000049818886,0.000004168202,0.000023565699,0.000010739221,0.00012255031,0.9960782,0.000098506214,0.00009956611,0.003363051],"study_design_scores_gemma":[0.0000052323644,0.000062820036,0.0007069944,0.0000025559843,0.000009358386,0.00010967528,0.0000058413457,0.0021659594,0.99516064,0.0000132658315,0.0017511275,0.0000064754254],"about_ca_topic_score_codex":0.0009190399,"about_ca_topic_score_gemma":0.0012434851,"teacher_disagreement_score":0.0009190399,"about_ca_system_score_codex":0.0006216191,"about_ca_system_score_gemma":0.00020315307,"threshold_uncertainty_score":0.0045101643},"labels":[],"label_agreement":null},{"id":"W2125167480","doi":"10.1109/ted.2006.877007","title":"New Superjunction LDMOST With N-Buffer Layer","year":2006,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Silicon Carbide Semiconductor Technologies","field":"Engineering","cited_by":45,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"York University; University of Toronto","funders":"","keywords":"Buffer (optical fiber); CMOS; Layer (electronics); Substrate (aquarium); Materials science; Optoelectronics; MOSFET; Process (computing); Compensation (psychology); Electronic engineering; Electrical engineering; Computer science; Nanotechnology; Voltage; Engineering; Transistor","score_opus":0.007403110919509995,"score_gpt":0.19768494751175128,"score_spread":0.1902818365922413,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2125167480","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9304136,0.0016800303,0.05743137,0.00016126668,0.00022121363,0.00005000375,0.00048428678,0.00076695456,0.008791362],"genre_scores_gemma":[0.96026355,0.00046111652,0.03491962,0.0000852229,0.000029506167,0.000026522357,0.00029134125,0.000017041963,0.003906059],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999485,0.0000032349697,0.000003019081,0.000017117705,0.000020005604,0.0000081556245],"domain_scores_gemma":[0.99990416,0.000010014667,0.000017365353,0.000017218325,0.00003413161,0.000017086091],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00008049049,0.00015663441,0.00018664298,0.00014859116,0.00020607696,0.00034381342,0.0010168246,0.00029322322,0.0010124414],"category_scores_gemma":[0.00007955594,0.00016064841,0.00017802161,0.00020868024,0.00012917318,0.00045368233,0.00019839425,0.00016521945,0.00023019464],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000092985574,0.000031032887,0.00081305514,0.00010655685,0.00001924004,0.00022548127,0.000023171538,0.0009106871,0.9881081,0.0009478701,0.00037732534,0.008344543],"study_design_scores_gemma":[0.0000892477,0.0012255384,0.0061659366,0.000028199322,0.00013973603,0.0013517666,0.00006279144,0.036248624,0.93864286,0.0008906188,0.01512034,0.0000342177],"about_ca_topic_score_codex":0.00047596433,"about_ca_topic_score_gemma":0.0013872933,"teacher_disagreement_score":0.0010168246,"about_ca_system_score_codex":0.00016779652,"about_ca_system_score_gemma":0.00021285468,"threshold_uncertainty_score":0.0033869743},"labels":[],"label_agreement":null},{"id":"W2125277991","doi":"10.1109/ted.2004.838452","title":"Stability Analysis of Current Programmed a-Si:H AMOLED Pixel Circuits","year":2004,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":29,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"AMOLED; Pixel; Electronic circuit; Brightness; Transistor; Current (fluid); Thin-film transistor; Electronic engineering; Diode; Stability (learning theory); Optoelectronics; Current mirror; Computer science; Materials science; Electrical engineering; Engineering; Optics; Physics; Voltage; Artificial intelligence; Active matrix; Nanotechnology","score_opus":0.020621817597021263,"score_gpt":0.2511571305375792,"score_spread":0.23053531294055796,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2125277991","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.84524244,0.0004403971,0.14622201,0.00020581593,0.000037885377,0.000071255185,0.00023670706,0.0010606938,0.006482858],"genre_scores_gemma":[0.99076754,0.000046692116,0.00761943,0.000021029535,0.0000069850166,0.000020368103,0.0000559426,0.00004602612,0.0014158385],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9997744,0.00002115407,0.000010071826,0.0000523151,0.00011565553,0.000026461936],"domain_scores_gemma":[0.99944824,0.0002311431,0.0000721194,0.00006563009,0.0001623001,0.000020660802],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00019599439,0.0001716298,0.00015366919,0.00039308288,0.0002754009,0.00044334267,0.0006486897,0.0003507434,0.0025734664],"category_scores_gemma":[0.0010871472,0.00010669174,0.00017101182,0.00014865522,0.00030744015,0.0005546633,0.00017526044,0.00035906956,0.00035126694],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0005024976,0.000095160336,0.0036982058,0.00015812294,0.00009594172,0.00036636324,0.00024941555,0.059097804,0.8796741,0.012157046,0.0008553693,0.04304993],"study_design_scores_gemma":[0.00001730335,0.00019133884,0.002197924,0.000008742124,0.000018491375,0.00017873135,0.000031307707,0.645351,0.3485352,0.0023433277,0.0011088094,0.00001776759],"about_ca_topic_score_codex":0.00067601324,"about_ca_topic_score_gemma":0.0006178083,"teacher_disagreement_score":0.0025734664,"about_ca_system_score_codex":0.0007523309,"about_ca_system_score_gemma":0.0002253001,"threshold_uncertainty_score":0.0086090565},"labels":[],"label_agreement":null},{"id":"W2127106059","doi":"10.1109/ted.2008.926744","title":"Two-Transistor Active Pixel Sensor Readout Circuits in Amorphous Silicon Technology for High-Resolution Digital Imaging Applications","year":2008,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"CCD and CMOS Imaging Sensors","field":"Engineering","cited_by":27,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Pixel; Dot pitch; Transistor; Image resolution; Image sensor; Materials science; CMOS sensor; CMOS; Noise (video); Optoelectronics; Electronic engineering; Computer science; Optics; Electrical engineering; Physics; Voltage; Engineering; Artificial intelligence","score_opus":0.006820580533054084,"score_gpt":0.21482537305702504,"score_spread":0.20800479252397094,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2127106059","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.6950314,0.002192062,0.2897111,0.00044779282,0.000316295,0.0002748472,0.0004780633,0.0019907285,0.009557697],"genre_scores_gemma":[0.8625474,0.0006414472,0.13141562,0.00018221454,0.00009007766,0.00012575554,0.00018529681,0.000043113192,0.0047691045],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998018,0.000027399396,0.000012671303,0.000049702838,0.00009179045,0.000016639158],"domain_scores_gemma":[0.9996717,0.00010792977,0.00008248521,0.000040724404,0.0000749095,0.000022259104],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00021327112,0.00030722568,0.00026724322,0.00021071242,0.00017671516,0.00048737836,0.00082461693,0.00043492185,0.0015634432],"category_scores_gemma":[0.00046265626,0.00019972646,0.00017339329,0.00025333793,0.00018143661,0.0007111663,0.00025925215,0.00029239134,0.00040925486],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00016632,0.00006105258,0.0010385786,0.00020739583,0.000026644211,0.0002604089,0.000074951146,0.001893203,0.9639388,0.0020156135,0.00079410535,0.029522967],"study_design_scores_gemma":[0.00011226577,0.0027987435,0.005247917,0.000039547955,0.00010171619,0.0021035564,0.00008723777,0.077680714,0.89559716,0.0015696355,0.014613488,0.000047984508],"about_ca_topic_score_codex":0.00021375586,"about_ca_topic_score_gemma":0.00065443054,"teacher_disagreement_score":0.0015634432,"about_ca_system_score_codex":0.0002546223,"about_ca_system_score_gemma":0.00019225206,"threshold_uncertainty_score":0.0052301884},"labels":[],"label_agreement":null},{"id":"W2127311650","doi":"10.1109/16.987126","title":"Diffusion current and its effect on noise in submicron MOSFETs","year":2002,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Semiconductor materials and devices","field":"Engineering","cited_by":25,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Shot noise; MOSFET; Flicker noise; Noise (video); Burst noise; Noise generator; Materials science; Field-effect transistor; Optoelectronics; Transistor; Diffusion current; Diffusion; Electronic engineering; Current (fluid); Electrical engineering; Noise figure; Physics; Engineering; Computer science; CMOS","score_opus":0.011492811232707274,"score_gpt":0.2270236832464446,"score_spread":0.21553087201373733,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2127311650","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.92906994,0.0073982487,0.05776977,0.00048598018,0.000119619595,0.00003179146,0.00012140649,0.0004389701,0.004564145],"genre_scores_gemma":[0.99611497,0.00077103276,0.0025138562,0.000032392574,0.00002210855,0.0000060771963,0.00003018505,0.000027063406,0.00048237597],"study_design_codex":"bench_or_experimental","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99982625,0.000027518485,0.000008652018,0.000043617805,0.00007403396,0.000019929277],"domain_scores_gemma":[0.9994437,0.00036392058,0.00008265166,0.000028430508,0.0000490099,0.00003231686],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0002841417,0.00054799614,0.00032373573,0.0003458907,0.00024665485,0.00037748006,0.0003729791,0.0005905536,0.0005921924],"category_scores_gemma":[0.0013577854,0.00021512697,0.0003217496,0.00018979721,0.00046276278,0.0007158557,0.00027206485,0.00028947063,0.00012980239],"study_design_candidate":"simulation_or_modeling","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00052935525,0.00010247799,0.0030374597,0.00032151633,0.000051129045,0.0010545232,0.0003008238,0.047810696,0.92127055,0.008792937,0.00023009883,0.016498316],"study_design_scores_gemma":[0.00013202398,0.0015596626,0.008071126,0.000091774564,0.00017559511,0.0021279354,0.000101892656,0.40896663,0.56383073,0.0104667265,0.004332338,0.00014369702],"about_ca_topic_score_codex":0.0006929992,"about_ca_topic_score_gemma":0.0007571371,"teacher_disagreement_score":0.0006929992,"about_ca_system_score_codex":0.0005063489,"about_ca_system_score_gemma":0.00016980665,"threshold_uncertainty_score":0.003673911},"labels":[],"label_agreement":null},{"id":"W2129515555","doi":"10.1109/ted.2010.2093770","title":"Laser-Induced Resistance Fine Tuning of Integrated Polysilicon Thin-Film Resistors","year":2010,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":12,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Polytechnique Montréal","funders":"Canada Research Chairs","keywords":"Materials science; Resistor; Polysilicon depletion effect; Optoelectronics; Fluence; Thin film; Raman spectroscopy; Laser; Optics; Transistor; Electrical engineering; Voltage; Nanotechnology; Gate oxide","score_opus":0.008154485192180396,"score_gpt":0.2143452573957264,"score_spread":0.206190772203546,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2129515555","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9804277,0.0006659542,0.016963476,0.00006787163,0.00004961027,0.000021851147,0.00007174452,0.00040592658,0.0013257981],"genre_scores_gemma":[0.9903487,0.00020677735,0.008099846,0.000025862466,0.000013525393,0.000015910367,0.00004167294,0.000041934712,0.0012056213],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999037,0.0000060680045,0.0000062877884,0.000030194857,0.000039274364,0.000014563799],"domain_scores_gemma":[0.9998597,0.000035520225,0.00004510628,0.000027625321,0.000023313889,0.000008765968],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00007878189,0.00028524912,0.00017801466,0.00016825505,0.00015260439,0.00015615097,0.000323954,0.00022376173,0.0009508128],"category_scores_gemma":[0.0002994456,0.00016681463,0.00009881915,0.0001344881,0.00020451003,0.00025889993,0.00014724126,0.00025519638,0.00018914105],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000013746903,0.0000041246135,0.000058680613,0.0000181415,0.0000020231078,0.000032242664,0.000019071675,0.00016351751,0.9977847,0.000030233974,0.000026421165,0.0018470364],"study_design_scores_gemma":[0.0000061119,0.000117447,0.0012048694,0.0000023576556,0.0000059398662,0.000114623326,0.000018131546,0.0027888129,0.99484164,0.00003501189,0.00086093723,0.0000040644627],"about_ca_topic_score_codex":0.00024083223,"about_ca_topic_score_gemma":0.0008682527,"teacher_disagreement_score":0.0009508128,"about_ca_system_score_codex":0.00016337821,"about_ca_system_score_gemma":0.000097046715,"threshold_uncertainty_score":0.0031808019},"labels":[],"label_agreement":null},{"id":"W2130519062","doi":"10.1109/ted.2004.838450","title":"Analytical Modeling of MOSFETs Channel Noise and Noise Parameters","year":2004,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Radio Frequency Integrated Circuit Design","field":"Engineering","cited_by":106,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McMaster University","funders":"","keywords":"Noise (video); MOSFET; Electronic engineering; Flicker noise; Noise measurement; Channel (broadcasting); Noise generator; Simple (philosophy); Noise figure; Computer science; Electrical engineering; Physics; Engineering; Acoustics; Voltage; Noise reduction; Transistor; CMOS","score_opus":0.01741106713836432,"score_gpt":0.22808613108646167,"score_spread":0.21067506394809735,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2130519062","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.023022162,0.0012337632,0.945635,0.00017268695,0.000100506906,0.00014422496,0.00056334736,0.0013162532,0.027812142],"genre_scores_gemma":[0.76781255,0.0035616367,0.20022108,0.00023741946,0.00014393586,0.0005966562,0.00096439203,0.00051053695,0.02595175],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99920887,0.000086936365,0.000029785531,0.00009342899,0.00050440617,0.00007661652],"domain_scores_gemma":[0.9994715,0.00014132842,0.000060649156,0.00008087638,0.00023112049,0.00001455298],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00056073297,0.0010230951,0.0008464931,0.00092259503,0.00048692935,0.0007507399,0.0016691079,0.0010730206,0.0024825458],"category_scores_gemma":[0.0021142634,0.00038297093,0.0007711577,0.00077675324,0.00053950126,0.0012458253,0.00047351184,0.00059493055,0.001613489],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00005224897,0.000037659767,0.000588561,0.00028720772,0.000040099436,0.00024750564,0.0001441925,0.83842325,0.05091897,0.08036909,0.0025238849,0.026367258],"study_design_scores_gemma":[0.000003506402,0.00002039,0.00013447524,0.000022410486,0.000008755532,0.000097364165,0.000011765407,0.9796662,0.0074165296,0.008121353,0.0044862092,0.000011070827],"about_ca_topic_score_codex":0.0031800794,"about_ca_topic_score_gemma":0.0036645965,"teacher_disagreement_score":0.0031800794,"about_ca_system_score_codex":0.0016837649,"about_ca_system_score_gemma":0.0013018722,"threshold_uncertainty_score":0.012216687},"labels":[],"label_agreement":null},{"id":"W2132293560","doi":"10.1109/ted.2002.806968","title":"Amorphous silicon active pixel sensor readout circuit for digital imaging","year":2003,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"CCD and CMOS Imaging Sensors","field":"Engineering","cited_by":121,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Sunnybrook Health Science Centre; University of Toronto; University of Waterloo","funders":"","keywords":"Noise (video); Amplifier; Pixel; Optoelectronics; Detector; Materials science; Electrical engineering; Image sensor; Linearity; Fixed-pattern noise; Electronic circuit; Electronic engineering; Physics; CMOS; Computer science; Optics; Engineering; Artificial intelligence","score_opus":0.008685714028059954,"score_gpt":0.21539534390476237,"score_spread":0.2067096298767024,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2132293560","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.22584295,0.0028124508,0.7145664,0.0006520804,0.0006453174,0.00041255416,0.0010774601,0.009818332,0.04417247],"genre_scores_gemma":[0.73327476,0.0010168323,0.23598759,0.0007082847,0.00020445535,0.00017425149,0.0008710564,0.00016686316,0.027595876],"study_design_codex":"bench_or_experimental","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99978846,0.000018204339,0.000010412599,0.000047089572,0.00012133175,0.000014598204],"domain_scores_gemma":[0.9998067,0.000042665404,0.000022465512,0.000032075543,0.000081718645,0.000014454947],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00013220399,0.00025790065,0.00017833336,0.00021452845,0.00023525668,0.0005265215,0.0007367395,0.0004123527,0.0058853463],"category_scores_gemma":[0.00038067845,0.00010739636,0.0001426145,0.000216414,0.00015297665,0.00041370437,0.00019109392,0.00034192685,0.001640493],"study_design_candidate":"simulation_or_modeling","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00009486551,0.000046891928,0.00048174057,0.00016201884,0.00001741312,0.000097441174,0.00003734652,0.0004682965,0.91864604,0.0035035228,0.0023653086,0.07407915],"study_design_scores_gemma":[0.00002747606,0.0005842153,0.0021861405,0.000020704998,0.00006344812,0.0013414677,0.000023489354,0.01505997,0.94109887,0.0007667173,0.038807757,0.000019684105],"about_ca_topic_score_codex":0.0002761558,"about_ca_topic_score_gemma":0.00039843845,"teacher_disagreement_score":0.0058853463,"about_ca_system_score_codex":0.00028024332,"about_ca_system_score_gemma":0.000265376,"threshold_uncertainty_score":0.019688427},"labels":[],"label_agreement":null},{"id":"W2132361787","doi":"10.1109/ted.2009.2030642","title":"Very Low Dark Current CCD Image Sensor","year":2009,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"CCD and CMOS Imaging Sensors","field":"Engineering","cited_by":20,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Dalsa Corporation","funders":"","keywords":"Dark current; Pixel; Physics; Current (fluid); Image (mathematics); Diffusion; Charge-coupled device; Phase (matter); Optoelectronics; Optics; Computer science; Artificial intelligence; Photodetector; Quantum mechanics","score_opus":0.005548320584680253,"score_gpt":0.230170861869601,"score_spread":0.22462254128492076,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2132361787","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.3387516,0.0034900808,0.5779354,0.0012125821,0.0009042218,0.00029881377,0.002824718,0.010472474,0.06411006],"genre_scores_gemma":[0.7666068,0.00057273963,0.19575359,0.0010034883,0.00015233396,0.00016455654,0.0012899782,0.00022666306,0.034229774],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9991436,0.00005948517,0.000023325962,0.00019770309,0.0005152583,0.00006054155],"domain_scores_gemma":[0.99937785,0.000102673475,0.00005451569,0.00006362471,0.00033683993,0.00006452307],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0002788021,0.00024874587,0.0004412235,0.00047889966,0.0002562885,0.00052341487,0.0010353383,0.0007076329,0.0052933143],"category_scores_gemma":[0.0007705618,0.00020798916,0.00016709178,0.0003731103,0.00031303338,0.00047866828,0.0004452169,0.0005173309,0.0019611723],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00019530153,0.000063558175,0.0007997655,0.00013932225,0.000016207434,0.000059977774,0.000032032836,0.00026573145,0.96343505,0.0013908746,0.00509347,0.028508764],"study_design_scores_gemma":[0.000034756355,0.00025208463,0.0047563976,0.0000112531525,0.000036804464,0.0004444505,0.000034882538,0.011071618,0.9671622,0.00031601914,0.015844727,0.00003490204],"about_ca_topic_score_codex":0.0006743887,"about_ca_topic_score_gemma":0.0009918719,"teacher_disagreement_score":0.0052933143,"about_ca_system_score_codex":0.0007335781,"about_ca_system_score_gemma":0.00037569675,"threshold_uncertainty_score":0.017707884},"labels":[],"label_agreement":null},{"id":"W2135369720","doi":"10.1109/ted.2005.850668","title":"On-chip antennas in silicon ICs and their application","year":2005,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":261,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Toronto","funders":"","keywords":"CMOS; Electronic circuit; Chip; Electronic engineering; Integrated circuit; Wireless; Radio frequency; System in package; Key (lock); System on a chip; Electrical engineering; Computer science; Engineering; Embedded system; Telecommunications","score_opus":0.006284640946332033,"score_gpt":0.20831543107228964,"score_spread":0.20203079012595762,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2135369720","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.10577357,0.049955286,0.47077563,0.0022760225,0.002464296,0.00008919686,0.00014217086,0.0018130398,0.36671075],"genre_scores_gemma":[0.82734597,0.022200605,0.09136305,0.0008707891,0.0006843587,0.00005183138,0.00016276768,0.00013608155,0.05718449],"study_design_codex":"design_other","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99978393,0.00003982406,0.000006228693,0.000028278186,0.000111441754,0.000030328],"domain_scores_gemma":[0.99977595,0.00008072599,0.000017602531,0.000051970674,0.000061638755,0.000012130449],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00017932677,0.00026813213,0.00021442173,0.00031603774,0.00016535136,0.0010883777,0.00039039075,0.0009834138,0.003568674],"category_scores_gemma":[0.00058235525,0.00021437265,0.00023931214,0.00038566487,0.0004898275,0.00047612996,0.00040248354,0.00044408566,0.0013283449],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00013744133,0.000095531606,0.0025555713,0.00068556826,0.00006513248,0.0007598267,0.00043070377,0.033314202,0.16306615,0.36922416,0.017309668,0.41235593],"study_design_scores_gemma":[0.000055764423,0.000572307,0.0044203037,0.00035501292,0.00009671271,0.0029713982,0.00033000647,0.14458273,0.16029403,0.13745165,0.5487958,0.00007432885],"about_ca_topic_score_codex":0.00026603416,"about_ca_topic_score_gemma":0.00028383464,"teacher_disagreement_score":0.003568674,"about_ca_system_score_codex":0.00035580155,"about_ca_system_score_gemma":0.00022950672,"threshold_uncertainty_score":0.011938393},"labels":[],"label_agreement":null},{"id":"W2136103934","doi":"10.1109/ted.2007.914839","title":"Fully Integrated Single Photon Avalanche Diode Detector in Standard CMOS 0.18- $\\mu$m Technology","year":2008,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Advanced Optical Sensing Technologies","field":"Physics and Astronomy","cited_by":161,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McMaster University","funders":"","keywords":"APDS; Avalanche photodiode; CMOS; Single-photon avalanche diode; Photodetector; Optoelectronics; Geiger counter; Avalanche diode; Detector; Physics; Electronic circuit; Diode; Optics; Electrical engineering; Voltage; Breakdown voltage; Engineering","score_opus":0.014778703834879453,"score_gpt":0.24813844158966403,"score_spread":0.23335973775478458,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2136103934","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.61829275,0.0042586154,0.3545556,0.00048813768,0.00039842539,0.0002652792,0.001764675,0.0043665087,0.015609975],"genre_scores_gemma":[0.77765155,0.001074339,0.21486613,0.00012698823,0.00006184175,0.00014561467,0.0004622636,0.00010201476,0.005509257],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9995116,0.000023815148,0.000024266827,0.0001139181,0.00027622146,0.0000501522],"domain_scores_gemma":[0.9995555,0.00008162973,0.00008133328,0.000036802074,0.00021992579,0.000024669576],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00019365895,0.0003507357,0.00048557983,0.00028833086,0.0001991839,0.0005739385,0.0009911711,0.0005611986,0.0016991316],"category_scores_gemma":[0.0006026211,0.00034831025,0.00029708736,0.00029842442,0.00013469781,0.00065754965,0.00025302582,0.00028869175,0.00075903017],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00015864345,0.00006120194,0.0017354779,0.0002600506,0.00005530833,0.00021155941,0.00007011059,0.003798726,0.9693429,0.0029823836,0.0013964545,0.019927176],"study_design_scores_gemma":[0.0001061348,0.0009824579,0.004160471,0.000039811635,0.00015347179,0.0011793548,0.000058713453,0.06622342,0.90530854,0.0013345062,0.020369135,0.00008397972],"about_ca_topic_score_codex":0.0009156949,"about_ca_topic_score_gemma":0.001539748,"teacher_disagreement_score":0.0016991316,"about_ca_system_score_codex":0.00063715695,"about_ca_system_score_gemma":0.0006075386,"threshold_uncertainty_score":0.0056841373},"labels":[],"label_agreement":null},{"id":"W2136234499","doi":"10.1109/ted.2005.850656","title":"MOSFET Modeling for RF IC Design","year":2005,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Radio Frequency Integrated Circuit Design","field":"Engineering","cited_by":156,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McMaster University","funders":"","keywords":"MOSFET; Electronic engineering; Radio frequency; Electrical engineering; Computer science; Engineering; Voltage; Transistor","score_opus":0.02706438670372167,"score_gpt":0.24352055893643304,"score_spread":0.21645617223271138,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2136234499","genre_codex":"methods","genre_gemma":"methods","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"methods","genre_consensus":"methods","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.0016911792,0.005072887,0.9528293,0.0004132953,0.00046246126,0.00013164134,0.0010182089,0.0023383098,0.036042757],"genre_scores_gemma":[0.18064062,0.018826004,0.6986948,0.00089286844,0.00077389914,0.001131879,0.004988648,0.0014855227,0.09256578],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9997098,0.00005091361,0.000015989724,0.000030208586,0.0001752411,0.000017884124],"domain_scores_gemma":[0.999752,0.000058074802,0.000017851922,0.000053166747,0.00011158867,0.000007358007],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00037747523,0.001040895,0.0007423649,0.00065213436,0.00033887927,0.00090138795,0.0016148322,0.001196978,0.01400763],"category_scores_gemma":[0.0011453212,0.0003261527,0.00087651063,0.0007026102,0.0002268577,0.0010952876,0.00043942113,0.00085886335,0.00883717],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0000615104,0.000053802705,0.0004090037,0.0011570983,0.00007821696,0.00041579275,0.00016971925,0.42506936,0.026421594,0.24189469,0.07935492,0.22491421],"study_design_scores_gemma":[0.000017598282,0.00006557063,0.0002164892,0.00018948321,0.000036522084,0.00037656617,0.000029382893,0.64054394,0.0042639095,0.07236843,0.28186408,0.000028091095],"about_ca_topic_score_codex":0.0016288916,"about_ca_topic_score_gemma":0.0018557063,"teacher_disagreement_score":0.01400763,"about_ca_system_score_codex":0.0006263109,"about_ca_system_score_gemma":0.0006807373,"threshold_uncertainty_score":0.04686016},"labels":[],"label_agreement":null},{"id":"W2136936744","doi":"10.1109/ted.2010.2051488","title":"Fabrication and Characterization of GaAs MOS Capacitor With CVD Grown Polymer-Based Thin Film as a Gate Dielectric","year":2010,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Semiconductor materials and devices","field":"Engineering","cited_by":5,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Bishop's University; Université de Sherbrooke","funders":"","keywords":"Capacitor; Gate dielectric; Dielectric; Materials science; Passivation; Capacitance; Polymer; Analytical Chemistry (journal); Optoelectronics; Thin film; Nanotechnology; Electrical engineering; Electrode; Chemistry; Layer (electronics); Voltage; Physical chemistry; Organic chemistry; Transistor","score_opus":0.005349357845986889,"score_gpt":0.19652865080218654,"score_spread":0.19117929295619965,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2136936744","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.988008,0.00083146134,0.0079138875,0.0001481222,0.000057959696,0.00009006085,0.0011266172,0.00012927977,0.0016946078],"genre_scores_gemma":[0.96772,0.0015379698,0.027172163,0.0000641038,0.000023281335,0.000081139035,0.00073814765,0.00003241288,0.0026307632],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999099,0.000004372848,0.0000048439633,0.000023223056,0.00004580549,0.000011903637],"domain_scores_gemma":[0.99984133,0.00004778223,0.00002972397,0.000015381715,0.000049001585,0.000016767668],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00010597164,0.00019613326,0.0002188376,0.00020442814,0.00029545135,0.00025525235,0.00029534064,0.0003434583,0.00092447986],"category_scores_gemma":[0.00031302948,0.00012726856,0.000109470166,0.00042078216,0.00012908157,0.00020795644,0.00010154149,0.00024207354,0.00019744974],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00001014707,0.0000054217303,0.00019453299,0.000039890634,0.0000036558133,0.00009852371,0.000012045554,0.00009498057,0.99864274,0.000035762714,0.000035316043,0.00082698406],"study_design_scores_gemma":[0.0000071391078,0.00017120874,0.0074009593,0.0000059021713,0.000016033273,0.00025364768,0.00004796311,0.001279785,0.98895264,0.000030233135,0.0018247538,0.0000097333],"about_ca_topic_score_codex":0.0015097046,"about_ca_topic_score_gemma":0.0029669912,"teacher_disagreement_score":0.0015097046,"about_ca_system_score_codex":0.00026118933,"about_ca_system_score_gemma":0.00036538497,"threshold_uncertainty_score":0.0030926466},"labels":[],"label_agreement":null},{"id":"W2138843068","doi":"10.1109/ted.2011.2149528","title":"RF Performance Potential of Array-Based Carbon-Nanotube Transistors—Part I: Intrinsic Results","year":2011,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Carbon Nanotubes in Composites","field":"Materials Science","cited_by":18,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Alberta","funders":"","keywords":"Transconductance; Carbon nanotube field-effect transistor; Parasitic extraction; Transistor; Carbon nanotube; Cutoff frequency; Radio frequency; PMOS logic; Field-effect transistor; Physics; Materials science; Electrical engineering; Optoelectronics; Computer science; Electronic engineering; Nanotechnology; Engineering; Voltage","score_opus":0.01520728138050011,"score_gpt":0.21937110384847347,"score_spread":0.20416382246797335,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2138843068","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.89163935,0.00624831,0.055901777,0.00051990803,0.000073383904,0.00007912665,0.001060288,0.00056569575,0.04391226],"genre_scores_gemma":[0.9862986,0.0012777784,0.008644657,0.00006245031,0.00004736041,0.000036072735,0.00043619992,0.000080511614,0.0031163413],"study_design_codex":"bench_or_experimental","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9995888,0.000053303505,0.000018400675,0.00007651864,0.00021508189,0.000047919908],"domain_scores_gemma":[0.9995265,0.00019507724,0.00004480666,0.000056740348,0.0001562919,0.000020625053],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00048223246,0.0005564693,0.00047589967,0.00027312184,0.000301046,0.0006688764,0.0007029146,0.00058624014,0.0017648871],"category_scores_gemma":[0.0015259221,0.000121615965,0.00040979337,0.00029989413,0.00028986446,0.0012248964,0.000420108,0.00033385053,0.0007687397],"study_design_candidate":"simulation_or_modeling","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00050662993,0.00015593281,0.008808822,0.001207587,0.00017629762,0.00069714227,0.0003548173,0.23485394,0.6759852,0.019765781,0.002427249,0.055060573],"study_design_scores_gemma":[0.000028813845,0.001646816,0.0073224013,0.00011634804,0.00014697744,0.00072301656,0.00014952938,0.42525387,0.55042493,0.003599245,0.010503562,0.000084463405],"about_ca_topic_score_codex":0.00057628483,"about_ca_topic_score_gemma":0.000762566,"teacher_disagreement_score":0.0017648871,"about_ca_system_score_codex":0.0005137951,"about_ca_system_score_gemma":0.00019902385,"threshold_uncertainty_score":0.005904138},"labels":[],"label_agreement":null},{"id":"W2140311025","doi":"10.1109/ted.2006.881053","title":"An Approach to Improve the Signal-to-Noise Ratio of Active Pixel Sensor for Low-Light-Level Applications","year":2006,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"CCD and CMOS Imaging Sensors","field":"Engineering","cited_by":23,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McMaster University","funders":"","keywords":"Reset (finance); CMOS; Noise (video); Signal-to-noise ratio (imaging); SIGNAL (programming language); Electronic engineering; Photodetector; Computer science; Node (physics); Image sensor; Pixel; Electrical engineering; Engineering; Optoelectronics; Physics; Telecommunications; Acoustics; Artificial intelligence","score_opus":0.007780634871971803,"score_gpt":0.225877943021343,"score_spread":0.2180973081493712,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2140311025","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.0966133,0.0008600347,0.89885765,0.00030506452,0.00007178999,0.000079368765,0.000033527493,0.00066184805,0.0025173575],"genre_scores_gemma":[0.44039172,0.000831903,0.55557483,0.00019432738,0.00007307434,0.00008997748,0.00005989193,0.000114998154,0.0026692941],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9996762,0.00004577479,0.000018451034,0.00007104276,0.00017046613,0.000018060331],"domain_scores_gemma":[0.9996338,0.00012574808,0.000064912056,0.00004583033,0.000115421,0.000014223485],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00045279946,0.0007527393,0.0004423403,0.00039759857,0.000247489,0.0006509539,0.00081660965,0.0006042715,0.0008201767],"category_scores_gemma":[0.0009909228,0.00033796282,0.00046691817,0.00027209494,0.00034811324,0.0007697993,0.00036661018,0.0007530065,0.000390732],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000047663052,0.00003833876,0.00019230758,0.00009332027,0.0000150437,0.000038510734,0.000035670448,0.0020351778,0.97058386,0.0027172451,0.00010590194,0.02409688],"study_design_scores_gemma":[0.000015196734,0.0003731342,0.0004729644,0.000010657889,0.00004232606,0.00027700077,0.000011242941,0.047667313,0.9464045,0.00095670536,0.0037493273,0.000019546926],"about_ca_topic_score_codex":0.00018447245,"about_ca_topic_score_gemma":0.00039849122,"teacher_disagreement_score":0.0008201767,"about_ca_system_score_codex":0.00033770452,"about_ca_system_score_gemma":0.00035199837,"threshold_uncertainty_score":0.0027437806},"labels":[],"label_agreement":null},{"id":"W2141101136","doi":"10.1109/16.877171","title":"Transduction principles of a-Si:H Schottky diode X-ray image sensors","year":2000,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":9,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Schottky diode; Materials science; X-ray detector; Detector; Sensitivity (control systems); Optoelectronics; Image sensor; Diode; Absorption (acoustics); Schottky barrier; Fabrication; X-ray; Optics; Physics; Electronic engineering; Engineering","score_opus":0.009286750410698147,"score_gpt":0.21220137923702848,"score_spread":0.20291462882633032,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2141101136","genre_codex":"empirical","genre_gemma":"methods","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"methods","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.5936584,0.0032858828,0.3893817,0.00068358425,0.00013411023,0.00041937814,0.00041190628,0.0012153959,0.010809631],"genre_scores_gemma":[0.9353966,0.0012576486,0.057664033,0.00016713167,0.000030082823,0.00015775763,0.00008105502,0.000035443292,0.005210157],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998418,0.000015523014,0.000010013363,0.00004047994,0.00007344411,0.000018723007],"domain_scores_gemma":[0.9999343,0.00003254612,0.000008254249,0.0000044084964,0.00001420764,0.0000062877893],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0001995344,0.0002513037,0.0002269503,0.00021334374,0.00019902745,0.0004664133,0.000508589,0.0005059902,0.0009429672],"category_scores_gemma":[0.00017043068,0.00029316734,0.00020126249,0.00008937805,0.0004896008,0.00045365441,0.00018946973,0.0003101131,0.00047270546],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000051455805,0.000023627166,0.00031923305,0.00012230003,0.000011805109,0.000115998366,0.000097509714,0.0012040309,0.98738223,0.004805444,0.00018365873,0.005682761],"study_design_scores_gemma":[0.000023917799,0.00032836912,0.0017229563,0.000016882574,0.000014140951,0.00059769873,0.0000676922,0.028667139,0.95945233,0.003575686,0.0055024973,0.00003065745],"about_ca_topic_score_codex":0.00022368152,"about_ca_topic_score_gemma":0.00031221283,"teacher_disagreement_score":0.0009429672,"about_ca_system_score_codex":0.0002961016,"about_ca_system_score_gemma":0.00023239505,"threshold_uncertainty_score":0.0031545758},"labels":[],"label_agreement":null},{"id":"W2143274460","doi":"10.1109/ted.2007.908883","title":"Atomistic Modeling of Gate-All-Around Si-Nanowire Field-Effect Transistors","year":2007,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":17,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"National Research Council Canada","funders":"","keywords":"Nanowire; Transistor; Materials science; Field-effect transistor; Quantum capacitance; Doping; Capacitance; Non-equilibrium thermodynamics; Logic gate; Optoelectronics; Condensed matter physics; Nanotechnology; Physics; Electronic engineering; Voltage; Electrode; Quantum mechanics; Engineering","score_opus":0.014657841866756447,"score_gpt":0.2565513253145231,"score_spread":0.24189348344776668,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2143274460","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.93989396,0.00023593123,0.043162897,0.00042022567,0.000048757047,0.000078712364,0.0008951141,0.00023227946,0.0150321275],"genre_scores_gemma":[0.9865767,0.00016232609,0.010320875,0.000065097876,0.000013647403,0.00011933718,0.00032535096,0.00004617196,0.002370523],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99991417,0.000025200687,0.0000027253127,0.000010449982,0.000026145604,0.000021353224],"domain_scores_gemma":[0.9997633,0.00010836658,0.000027790551,0.00002465939,0.000041583662,0.000034306835],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00020840524,0.00028784527,0.00064511073,0.00024033929,0.0005215831,0.00046980515,0.0012261379,0.0011042604,0.0020397971],"category_scores_gemma":[0.00079445326,0.0002979846,0.00040253357,0.00038056943,0.0006794216,0.00048789012,0.000357345,0.00036638186,0.00021299558],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000032564596,0.000028525448,0.0006205228,0.000020512101,0.000018422841,0.0000878097,0.000026617894,0.99240077,0.0022983993,0.0035076865,0.00018899601,0.00076913787],"study_design_scores_gemma":[0.00000765162,0.000008543613,0.0001813802,0.0000013453127,0.0000028561053,0.0000060428297,0.0000073115525,0.9989274,0.0002274796,0.00048102762,0.00014608902,0.0000027878903],"about_ca_topic_score_codex":0.013737262,"about_ca_topic_score_gemma":0.010952762,"teacher_disagreement_score":0.013737262,"about_ca_system_score_codex":0.0010977173,"about_ca_system_score_gemma":0.0010194028,"threshold_uncertainty_score":0.027314603},"labels":[],"label_agreement":null},{"id":"W2143848687","doi":"10.1109/ted.2005.859635","title":"Accelerated Stress Testing of a-Si:H Pixel Circuits for AMOLED Displays","year":2005,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":29,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"University of Waterloo","keywords":"AMOLED; Backplane; Active matrix; OLED; Reliability (semiconductor); Thin-film transistor; Materials science; Electronic circuit; Transistor; Stress (linguistics); Diode; Optoelectronics; Pixel; Electronic engineering; Computer science; Electrical engineering; Engineering; Voltage; Computer hardware; Nanotechnology; Artificial intelligence","score_opus":0.02535717299978646,"score_gpt":0.24531495127131142,"score_spread":0.21995777827152496,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2143848687","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.79582804,0.0008471952,0.2009019,0.00007524981,0.000022393624,0.00013929648,0.00015622993,0.00041643795,0.0016132744],"genre_scores_gemma":[0.9442861,0.00029773367,0.054657843,0.000020077148,0.000017056684,0.00006334981,0.000066067034,0.00002398991,0.0005678054],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99981195,0.000036251553,0.000011807707,0.00002942703,0.00009454668,0.000016066904],"domain_scores_gemma":[0.9996697,0.0001105877,0.00007281807,0.000046077133,0.00008527457,0.000015520298],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00023445014,0.00029642077,0.00023181988,0.00035893722,0.00018906045,0.00024782194,0.00030981522,0.00036181576,0.00046966725],"category_scores_gemma":[0.0005872082,0.00011595063,0.00023266952,0.00019057479,0.000289739,0.0003491141,0.00020281092,0.00024459307,0.00010634355],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00007694228,0.000060286693,0.0052447137,0.0000809095,0.000016570162,0.00013336593,0.000102552476,0.009095453,0.95005614,0.0010953201,0.0002124736,0.03382535],"study_design_scores_gemma":[0.000026513591,0.001430681,0.026667658,0.00001821686,0.000022803693,0.00069351797,0.00007649745,0.18031861,0.7869486,0.0013531633,0.002403429,0.000040329316],"about_ca_topic_score_codex":0.00053925626,"about_ca_topic_score_gemma":0.0013646107,"teacher_disagreement_score":0.00053925626,"about_ca_system_score_codex":0.0003792788,"about_ca_system_score_gemma":0.0001986123,"threshold_uncertainty_score":0.0027518868},"labels":[],"label_agreement":null},{"id":"W2145546338","doi":"10.1109/ted.2007.902900","title":"Nonequilibrium Green's Function Treatment of Phonon Scattering in Carbon-Nanotube Transistors","year":2007,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Carbon Nanotubes in Composites","field":"Materials Science","cited_by":184,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Carbon nanotube; Phonon; Non-equilibrium thermodynamics; Scattering; Carbon nanotube field-effect transistor; Phonon scattering; Function (biology); Transistor; Materials science; Condensed matter physics; Nanotechnology; Physics; Field-effect transistor; Quantum mechanics","score_opus":0.010771249978882865,"score_gpt":0.2448944379068673,"score_spread":0.23412318792798442,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2145546338","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.19998087,0.0020369862,0.7751699,0.0007471101,0.00019850118,0.000069692556,0.00026569283,0.00026820836,0.02126303],"genre_scores_gemma":[0.9068345,0.0017912689,0.075224765,0.00026532574,0.00009816275,0.0003192081,0.0002112442,0.0002605405,0.014995009],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99982965,0.000047102025,0.0000066873586,0.000013086971,0.00007551544,0.000027856078],"domain_scores_gemma":[0.99974877,0.00013396167,0.000019589037,0.000033508466,0.0000487384,0.000015434156],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0005365034,0.00057683187,0.0006967836,0.00047427142,0.0005513458,0.000573387,0.0011982893,0.0009153251,0.0011360651],"category_scores_gemma":[0.000932357,0.00031398833,0.0007326915,0.00046255108,0.0006968268,0.00093513774,0.00035737857,0.0005169664,0.00035924962],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000021160062,0.000040476625,0.0004422204,0.000072071154,0.000024332934,0.00027168752,0.000070133436,0.8877595,0.0066565704,0.09982439,0.0003841473,0.0044334135],"study_design_scores_gemma":[0.0000036512463,0.0000055137803,0.000070129616,0.000004002365,0.0000018795042,0.000014633455,0.0000042097795,0.99023765,0.0003471103,0.00892484,0.00038174345,0.0000045570773],"about_ca_topic_score_codex":0.005038116,"about_ca_topic_score_gemma":0.0049675102,"teacher_disagreement_score":0.005038116,"about_ca_system_score_codex":0.0011177644,"about_ca_system_score_gemma":0.0011950907,"threshold_uncertainty_score":0.010017574},"labels":[],"label_agreement":null},{"id":"W2145936381","doi":"10.1109/16.936506","title":"Profile design considerations for minimizing base transit time in SiGe HBTs for all levels of injection before onset of Kirk effect","year":2001,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":17,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Common emitter; Doping; Bipolar junction transistor; Materials science; Optoelectronics; Diffusion; Electric field; Base (topology); Transit time; Silicon-germanium; Current density; Transistor; Electrical engineering; Chemistry; Physics; Engineering; Voltage; Mathematics; Silicon","score_opus":0.033108851102220255,"score_gpt":0.27365090042286,"score_spread":0.24054204932063974,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2145936381","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.2017892,0.00038291974,0.7915626,0.00019314792,0.000015137778,0.0001160205,0.000071904105,0.0004312502,0.0054377434],"genre_scores_gemma":[0.8134694,0.00018649234,0.1853701,0.000029035278,0.000004763093,0.000060282986,0.000038935654,0.000082054634,0.0007589866],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99991095,0.000023716917,0.000004187626,0.000009648708,0.00004025137,0.000011256422],"domain_scores_gemma":[0.999793,0.0000786318,0.00004089406,0.000018630579,0.000057466405,0.000011402969],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00039312616,0.00031311632,0.00025638065,0.0002376432,0.0003231249,0.0004919063,0.00036488162,0.00031204143,0.00047467346],"category_scores_gemma":[0.0013009543,0.0002426031,0.00023094537,0.00019676,0.00021461029,0.0004600473,0.0002549454,0.000288368,0.00016564282],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00022928405,0.0000442303,0.0032894507,0.00013663094,0.00003071012,0.00013478052,0.00021720873,0.7992661,0.13091935,0.014694454,0.00040880387,0.050628915],"study_design_scores_gemma":[0.000022048975,0.000083323604,0.00065517565,0.000011552257,0.00001515891,0.00007991197,0.00004174308,0.96954185,0.02657649,0.0021168813,0.00084339216,0.000012545729],"about_ca_topic_score_codex":0.0018884903,"about_ca_topic_score_gemma":0.0032291093,"teacher_disagreement_score":0.0018884903,"about_ca_system_score_codex":0.0006922886,"about_ca_system_score_gemma":0.0008248098,"threshold_uncertainty_score":0.005022943},"labels":[],"label_agreement":null},{"id":"W2146190744","doi":"10.1109/16.998589","title":"Modeling of the reverse characteristics of a-Si:H TFTs","year":2002,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":65,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Materials science; Thermal conduction; Ohmic contact; Leakage (economics); Thin-film transistor; Conductivity; Optoelectronics; Transistor; Dielectric; Silicon; Biasing; Voltage; Condensed matter physics; Electrical engineering; Nanotechnology; Chemistry; Composite material; Physics","score_opus":0.013614443104043143,"score_gpt":0.1944886949427255,"score_spread":0.18087425183868236,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2146190744","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.75357735,0.0012881912,0.23449132,0.00025752696,0.000051718467,0.00005889285,0.0006073853,0.001069071,0.008598624],"genre_scores_gemma":[0.9928069,0.00034161189,0.0049938885,0.000016854894,0.000012288198,0.00002005386,0.0001306807,0.000023821452,0.0016538488],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9999268,0.000009536176,0.0000037722261,0.000015024217,0.000033102126,0.000011672452],"domain_scores_gemma":[0.99986017,0.000059932554,0.000018325767,0.00001570715,0.000040908355,0.0000049262862],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000100343874,0.00029847136,0.0001719084,0.0001904195,0.00011626151,0.00025700743,0.00053055095,0.0005349312,0.00081497064],"category_scores_gemma":[0.00053149497,0.00011931745,0.0003315946,0.00016323559,0.00020415719,0.0004805541,0.00009585813,0.00017821946,0.00034821546],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00017823571,0.00003324936,0.0035012201,0.0001284788,0.000040892377,0.0004122338,0.00012101565,0.75261116,0.22103187,0.0026281185,0.0004947511,0.01881875],"study_design_scores_gemma":[0.00000767551,0.00010243963,0.0011261087,0.000004021175,0.000016119866,0.00014111305,0.000017922299,0.9646387,0.032102782,0.00063268666,0.0012038426,0.0000066037287],"about_ca_topic_score_codex":0.0026548998,"about_ca_topic_score_gemma":0.0017354072,"teacher_disagreement_score":0.0026548998,"about_ca_system_score_codex":0.00043278493,"about_ca_system_score_gemma":0.00021588766,"threshold_uncertainty_score":0.0052788854},"labels":[],"label_agreement":null},{"id":"W2146192334","doi":"10.1109/16.915724","title":"Transimpedance amplifier-based full low-frequency noise characterization setup for Si/SiGe HBTs","year":2001,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Radio Frequency Integrated Circuit Design","field":"Engineering","cited_by":30,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"CMC Microsystems (Canada)","funders":"Centre National de la Recherche Scientifique","keywords":"Transimpedance amplifier; Bipolar junction transistor; Amplifier; Noise (video); Electrical impedance; Optoelectronics; Y-factor; Heterojunction bipolar transistor; Current source; Electrical engineering; Transistor; Flicker noise; Electronic engineering; Materials science; Voltage; Low-noise amplifier; Noise figure; Engineering; Operational amplifier; Computer science; CMOS","score_opus":0.012565219450980386,"score_gpt":0.22804385291738563,"score_spread":0.21547863346640525,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2146192334","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.73801893,0.00040429507,0.2561634,0.00008672069,0.00011553141,0.00026587016,0.000963758,0.0018131755,0.002168433],"genre_scores_gemma":[0.9422276,0.00016325022,0.055251732,0.00004051828,0.000028548191,0.00032087526,0.00028428147,0.00007252044,0.0016106702],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9995778,0.00005579544,0.000027053442,0.00013031307,0.00017214306,0.00003689507],"domain_scores_gemma":[0.9993679,0.00014974641,0.000074685115,0.00016092464,0.00020284952,0.000043868575],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00032469857,0.00064310094,0.00062843086,0.0006354146,0.00037357066,0.00038045822,0.00082460546,0.00042212542,0.0036147267],"category_scores_gemma":[0.00068840757,0.00021233111,0.00022209913,0.00034583217,0.0003767693,0.00040043867,0.00039650602,0.00049894734,0.0007059277],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0001234084,0.000029691037,0.0003965809,0.000060651095,0.000010111293,0.00003993777,0.000048686357,0.00045606866,0.9931421,0.0003601221,0.000089352136,0.005243237],"study_design_scores_gemma":[0.000027230431,0.00064514513,0.0041447943,0.000011332729,0.000030066467,0.0002761285,0.000040469506,0.010855505,0.981899,0.00016994061,0.0018751827,0.000025036592],"about_ca_topic_score_codex":0.0008003295,"about_ca_topic_score_gemma":0.0011071723,"teacher_disagreement_score":0.0036147267,"about_ca_system_score_codex":0.00038932523,"about_ca_system_score_gemma":0.00033044873,"threshold_uncertainty_score":0.012092471},"labels":[],"label_agreement":null},{"id":"W2147133116","doi":"10.1109/ted.2015.2406074","title":"An Ultra-Low Specific ON-Resistance LDMOST With Self-Driven Split Gate","year":2015,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":9,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Toronto","funders":"China Scholarship Council; National Natural Science Foundation of China","keywords":"Oxide; Field-effect transistor; Transistor; Physics; Doping; Electrical engineering; Analytical Chemistry (journal); Voltage; Topology (electrical circuits); Materials science; Optoelectronics; Chemistry; Quantum mechanics; Engineering","score_opus":0.01585764491244317,"score_gpt":0.23351346497168698,"score_spread":0.2176558200592438,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2147133116","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99051625,0.00043068585,0.005908302,0.00015923362,0.000060572598,0.00001951679,0.0002062905,0.00030234875,0.0023967817],"genre_scores_gemma":[0.9946148,0.00012826933,0.0041638436,0.000044223052,0.0000127899775,0.000015099898,0.000083431834,0.000015025372,0.00092239503],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999378,0.0000052709665,0.000002673459,0.0000170307,0.000019500618,0.000017691098],"domain_scores_gemma":[0.99986506,0.00003271333,0.000026942223,0.000018768225,0.000027451924,0.000029090625],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000087294226,0.00025053672,0.00042336644,0.00012783607,0.00024589643,0.00039689857,0.0007754494,0.0005068069,0.00086314714],"category_scores_gemma":[0.0001713894,0.00014076076,0.00024506275,0.00019361963,0.00019763508,0.0004385108,0.00027732516,0.00018034292,0.00021570454],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0003411412,0.00008447502,0.000946936,0.0001726241,0.00004447205,0.00061411277,0.00006446273,0.0057662176,0.9853892,0.0013021415,0.000789884,0.0044843345],"study_design_scores_gemma":[0.00021666074,0.0021937792,0.004983264,0.00003564609,0.00014321398,0.001265693,0.00008527583,0.21972921,0.7624747,0.0013731567,0.0074306945,0.0000686285],"about_ca_topic_score_codex":0.0010608389,"about_ca_topic_score_gemma":0.002053471,"teacher_disagreement_score":0.0010608389,"about_ca_system_score_codex":0.0003673874,"about_ca_system_score_gemma":0.00024419275,"threshold_uncertainty_score":0.0028874874},"labels":[],"label_agreement":null},{"id":"W2147369769","doi":"10.1109/ted.2002.801229","title":"Channel noise modeling of deep submicron MOSFETs","year":2002,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Semiconductor materials and devices","field":"Engineering","cited_by":149,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McMaster University","funders":"","keywords":"Noise (video); Flicker noise; Electronic engineering; Channel (broadcasting); Noise temperature; Noise generator; Materials science; Burst noise; Noise spectral density; Optoelectronics; Noise figure; CMOS; Electrical engineering; Phase noise; Engineering; Computer science","score_opus":0.016414287501556737,"score_gpt":0.20847757474145145,"score_spread":0.19206328723989471,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2147369769","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.08634216,0.0018198347,0.899761,0.00017200288,0.00012791302,0.00006638268,0.00047601087,0.0010574525,0.010177217],"genre_scores_gemma":[0.8612733,0.0015194903,0.121207856,0.00023381395,0.00010916425,0.0001921259,0.00065842323,0.0003368395,0.014468972],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99971646,0.000037714308,0.000010023467,0.00004858818,0.00014995314,0.00003723705],"domain_scores_gemma":[0.999808,0.000048503643,0.000025051728,0.000030214867,0.000077425335,0.000010795658],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0002231373,0.0005768253,0.00049911643,0.00038386864,0.00022382337,0.00040318124,0.0008620285,0.0006016495,0.0007887141],"category_scores_gemma":[0.000511564,0.00021453174,0.00054348516,0.00021221107,0.00025121315,0.00084836246,0.0002693656,0.00031222147,0.00053422595],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00008993001,0.000035508743,0.0016105574,0.00013591476,0.000049601775,0.0002693734,0.00010818763,0.8519147,0.09265491,0.022064669,0.0019469737,0.02911967],"study_design_scores_gemma":[0.0000056468193,0.00003321619,0.00043353162,0.000009836335,0.000009639361,0.00006203484,0.000007800418,0.98640823,0.0067258202,0.0032945038,0.0029999302,0.000009792652],"about_ca_topic_score_codex":0.004402192,"about_ca_topic_score_gemma":0.0047235065,"teacher_disagreement_score":0.004402192,"about_ca_system_score_codex":0.0008580123,"about_ca_system_score_gemma":0.00066593237,"threshold_uncertainty_score":0.008753121},"labels":[],"label_agreement":null},{"id":"W2152408330","doi":"10.1109/ted.2008.2011679","title":"Influence of Channel Stoichiometry on Zinc Indium Oxide Thin-Film Transistor Performance","year":2009,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":25,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Dalhousie University","funders":"","keywords":"Stoichiometry; Annealing (glass); Transistor; Materials science; Thin-film transistor; Zinc; Indium; Sputtering; Optoelectronics; Analytical Chemistry (journal); Threshold voltage; Thin film; Subthreshold conduction; Oxide; Semiconductor; Subthreshold slope; Voltage; Nanotechnology; Electrical engineering; Chemistry; Metallurgy; Layer (electronics); Physical chemistry","score_opus":0.006783900093442047,"score_gpt":0.20766145163019006,"score_spread":0.20087755153674802,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2152408330","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9985274,0.0002719795,0.00038005147,0.00001899606,0.000009611102,0.000008944899,0.000083679326,0.000037418817,0.00066181365],"genre_scores_gemma":[0.9985697,0.0002250088,0.0005809745,0.000009781443,0.0000034537902,0.000008455531,0.000102494116,0.00002667011,0.00047344578],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998541,0.00002037529,0.000015794178,0.000040271505,0.000036966874,0.000032401367],"domain_scores_gemma":[0.99961346,0.00020401076,0.00004573103,0.00002379004,0.00006782945,0.000045176315],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0002421564,0.00031464186,0.00032205248,0.00019966667,0.0002059053,0.00067714613,0.00029421036,0.00018976555,0.0013053779],"category_scores_gemma":[0.0008515129,0.00029838915,0.000086710905,0.00018360627,0.0001462093,0.00028635867,0.00016360848,0.0001284518,0.00029963374],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00027511886,0.000025888354,0.0022226472,0.000075763026,0.000016115871,0.000115498704,0.000038614315,0.0004539658,0.99491054,0.00008528483,0.000036654077,0.001743917],"study_design_scores_gemma":[0.000022496932,0.00019950356,0.0055159214,0.0000066355224,0.00005375806,0.00012511623,0.00005049188,0.0019160681,0.9916236,0.000030352776,0.00044939958,0.000006608607],"about_ca_topic_score_codex":0.00092656486,"about_ca_topic_score_gemma":0.0020702288,"teacher_disagreement_score":0.0013053779,"about_ca_system_score_codex":0.00022613899,"about_ca_system_score_gemma":0.00017790367,"threshold_uncertainty_score":0.0043668747},"labels":[],"label_agreement":null},{"id":"W2152459384","doi":"10.1109/ted.2005.848101","title":"Surface Recombination Currents in “Type-II” NpN InP–GaAsSb–InP Self-Aligned DHBTs","year":2005,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Semiconductor Quantum Structures and Devices","field":"Physics and Astronomy","cited_by":40,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Simon Fraser University","funders":"","keywords":"Common emitter; Optoelectronics; Materials science; Bipolar junction transistor; Heterojunction bipolar transistor; Heterojunction; Indium phosphide; Gallium arsenide; Transistor; Electrical engineering; Voltage","score_opus":0.011737777747272363,"score_gpt":0.2732017339247321,"score_spread":0.26146395617745977,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2152459384","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9982668,0.00027278616,0.00077197765,0.00001418189,0.000005028413,0.000007258088,0.000049665257,0.00004344143,0.00056896557],"genre_scores_gemma":[0.998741,0.000163695,0.0005459197,0.000006779167,0.0000046656073,0.000005174996,0.000073337935,0.000009614138,0.00044996964],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99988174,0.000014648952,0.000005050381,0.000034243625,0.000044428754,0.000019941124],"domain_scores_gemma":[0.99969256,0.00010295705,0.0000757009,0.00002212273,0.00007920701,0.000027496128],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0001266399,0.00020727627,0.00021768219,0.00019307689,0.0001653233,0.0003520915,0.00045547087,0.00018678878,0.00094680727],"category_scores_gemma":[0.00040874275,0.00010303107,0.00013612406,0.00020601723,0.00025985844,0.00039753184,0.00015904318,0.0002325633,0.00016084814],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00014943456,0.000036857222,0.0019999703,0.000064837266,0.0000145340255,0.00006142112,0.00015224695,0.0006525689,0.9936526,0.00012443966,0.000039875806,0.0030511902],"study_design_scores_gemma":[0.000016826332,0.0005750304,0.020045508,0.0000075395974,0.00004663522,0.0001836844,0.00016861505,0.009196855,0.968758,0.00012218727,0.00087276305,0.0000064012747],"about_ca_topic_score_codex":0.0010512843,"about_ca_topic_score_gemma":0.0009928661,"teacher_disagreement_score":0.0010512843,"about_ca_system_score_codex":0.00049698725,"about_ca_system_score_gemma":0.00011835966,"threshold_uncertainty_score":0.0036059022},"labels":[],"label_agreement":null},{"id":"W2155373087","doi":"10.1109/ted.2005.843885","title":"Effects of the Parasitics on the Time Response of RCE-PDs","year":2005,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Photonic and Optical Devices","field":"Engineering","cited_by":10,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McMaster University","funders":"","keywords":"Parasitic extraction; Photodetector; Inductor; Resistor; Optoelectronics; Electronic engineering; Capacitive sensing; Materials science; Electrical engineering; Engineering; Voltage","score_opus":0.004104593522960615,"score_gpt":0.2077204550685489,"score_spread":0.20361586154558828,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2155373087","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.6000545,0.00251977,0.37901253,0.00046799204,0.00017200448,0.000145463,0.00042912713,0.0026071377,0.014591412],"genre_scores_gemma":[0.9885671,0.00081312255,0.007512413,0.000054672313,0.000014468027,0.000036873033,0.000065403,0.000116740535,0.0028192045],"study_design_codex":"bench_or_experimental","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9993574,0.00009660677,0.000027137728,0.00014445551,0.00028020501,0.00009420029],"domain_scores_gemma":[0.9986607,0.0007882926,0.00016007599,0.00020602993,0.00015398397,0.00003096935],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0006127701,0.00072094036,0.0005045968,0.00033672818,0.0002548584,0.0008390145,0.0008984379,0.00096042425,0.0017253458],"category_scores_gemma":[0.0032392961,0.0004562972,0.00061965286,0.00037587405,0.0005356378,0.0013313929,0.00047407637,0.0006933077,0.0005419083],"study_design_candidate":"simulation_or_modeling","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0006265486,0.000120610086,0.0031001568,0.00040380904,0.00011914719,0.0012438355,0.00061181444,0.34522864,0.60691875,0.01281862,0.0007579475,0.028050035],"study_design_scores_gemma":[0.000027586166,0.0001854118,0.0012688899,0.000028833647,0.000064014006,0.000653519,0.00006475832,0.7213802,0.27221686,0.0013822706,0.0026876968,0.000040046063],"about_ca_topic_score_codex":0.0011365749,"about_ca_topic_score_gemma":0.00089843996,"teacher_disagreement_score":0.0017253458,"about_ca_system_score_codex":0.0011830148,"about_ca_system_score_gemma":0.00041126803,"threshold_uncertainty_score":0.0085834265},"labels":[],"label_agreement":null},{"id":"W2156100883","doi":"10.1109/ted.2008.920995","title":"Screening Effects Between Field-Enhancing Patterned Carbon Nanotubes: A Numerical Study","year":2008,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Carbon Nanotubes in Composites","field":"Materials Science","cited_by":12,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McGill University","funders":"","keywords":"Carbon nanotube; Joule heating; Screening effect; Current density; Materials science; Field electron emission; Field (mathematics); Anisotropy; Current (fluid); Nanotechnology; Optoelectronics; Condensed matter physics; Optics; Composite material; Physics; Thermodynamics","score_opus":0.01453775601815696,"score_gpt":0.2650627964246775,"score_spread":0.25052504040652057,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2156100883","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.90763915,0.00074823113,0.06574015,0.00058943057,0.000055609944,0.000112405134,0.00043981918,0.00023302951,0.024442168],"genre_scores_gemma":[0.97071886,0.0002656308,0.02646742,0.00005762111,0.000011910309,0.00011280331,0.0001464854,0.000036167854,0.002183079],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9998596,0.00003286424,0.000007807283,0.000017198847,0.000043425014,0.00003904029],"domain_scores_gemma":[0.9982457,0.0012577232,0.00016787123,0.00007680752,0.0001801392,0.00007164438],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0005899213,0.0003516682,0.0006536433,0.0005929685,0.0006565436,0.0006907906,0.0007484344,0.0013890093,0.0028524217],"category_scores_gemma":[0.0028138221,0.0003534204,0.0004413888,0.0008645354,0.0008108168,0.0006122884,0.00047351478,0.00049317046,0.00016987095],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000057867994,0.00005203257,0.0016295341,0.0000771787,0.000016369167,0.0001388005,0.000039309183,0.9885704,0.0024141544,0.0050142948,0.00020606756,0.0017839929],"study_design_scores_gemma":[0.0000112785965,0.00001654577,0.00021179978,0.0000059716117,0.0000043612686,0.000015225605,0.0000140803895,0.99878126,0.00038146926,0.00040510125,0.00014919267,0.0000038438907],"about_ca_topic_score_codex":0.011522739,"about_ca_topic_score_gemma":0.006954918,"teacher_disagreement_score":0.011522739,"about_ca_system_score_codex":0.0011612019,"about_ca_system_score_gemma":0.0008274142,"threshold_uncertainty_score":0.02291137},"labels":[],"label_agreement":null},{"id":"W2156778325","doi":"10.1109/16.987116","title":"Technological requirements for a lateral SiGe HBT technology including theoretical performance predictions relative to vertical SiGe HBTs","year":2002,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Radio Frequency Integrated Circuit Design","field":"Engineering","cited_by":18,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Heterojunction bipolar transistor; Parasitic extraction; Silicon-germanium; Materials science; Radio frequency; Transistor; Bipolar junction transistor; Electrical engineering; Optoelectronics; Microwave; Cutoff frequency; Electronic engineering; Engineering; Telecommunications; Silicon; Voltage","score_opus":0.026666658232198107,"score_gpt":0.2540245364799412,"score_spread":0.22735787824774312,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2156778325","genre_codex":"empirical","genre_gemma":"methods","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"methods","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.5707468,0.005110508,0.30653256,0.0029704187,0.00023274496,0.0001460025,0.000557038,0.0012476048,0.1124563],"genre_scores_gemma":[0.95275277,0.0018542047,0.03863194,0.00022200253,0.000076530705,0.00012335156,0.00028767643,0.000069748756,0.005981754],"study_design_codex":"bench_or_experimental","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9998053,0.000017399476,0.000009926485,0.00001960276,0.00011747251,0.000030286996],"domain_scores_gemma":[0.99943596,0.00031081558,0.00006154245,0.00003844007,0.00012836412,0.000024818326],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00033018168,0.00025674023,0.0002450312,0.00018815913,0.0003598723,0.00076658087,0.0003523761,0.0006155118,0.0048006703],"category_scores_gemma":[0.0016961463,0.00018414907,0.00022471182,0.00021752305,0.00035411786,0.0010109209,0.0003776928,0.0003181636,0.0012230747],"study_design_candidate":"simulation_or_modeling","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00030086972,0.00006272126,0.0038461133,0.00088101655,0.000033835033,0.0008402975,0.00015640252,0.17340724,0.61557955,0.13360365,0.0026534183,0.06863491],"study_design_scores_gemma":[0.000087161374,0.0011625475,0.005755398,0.00019801497,0.000118007854,0.0023148344,0.00050294516,0.71684563,0.1772268,0.053512536,0.042211875,0.00006424119],"about_ca_topic_score_codex":0.0006497939,"about_ca_topic_score_gemma":0.00071779714,"teacher_disagreement_score":0.0048006703,"about_ca_system_score_codex":0.00031447093,"about_ca_system_score_gemma":0.00034478103,"threshold_uncertainty_score":0.016059875},"labels":[],"label_agreement":null},{"id":"W2158382796","doi":"10.1109/ted.2010.2051370","title":"Fast Lateral Amorphous-Selenium Metal–Semiconductor–Metal Photodetector With High Blue-to-Ultraviolet Responsivity","year":2010,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":21,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Photodetector; Responsivity; Optoelectronics; Ultraviolet; Semiconductor detector; Semiconductor; Notation; Detector; Materials science; Amorphous solid; Metal; Physics; Optics; Chemistry; Crystallography; Mathematics","score_opus":0.00587063182852703,"score_gpt":0.20233692613448598,"score_spread":0.19646629430595894,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2158382796","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9562578,0.00087055215,0.03538838,0.00019920163,0.00006936114,0.00005596173,0.00040953374,0.0013043055,0.0054449346],"genre_scores_gemma":[0.9498304,0.0003725327,0.042226456,0.00011111293,0.000023728348,0.00005554118,0.00023279578,0.00008854556,0.007058832],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.999757,0.00001970693,0.000011002512,0.000068727815,0.0001127802,0.000030836276],"domain_scores_gemma":[0.99981254,0.000042478165,0.000031653944,0.000030176245,0.000061634964,0.000021457956],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00027716949,0.0003487753,0.00044383763,0.00025756328,0.00023173523,0.00044225156,0.0006508283,0.0004607743,0.0015558137],"category_scores_gemma":[0.00025574322,0.00026796164,0.00030684308,0.0003909777,0.00018192669,0.0003832107,0.0005000362,0.00033484504,0.00077801966],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00005694791,0.00001739409,0.00039577778,0.00004247078,0.000010977315,0.00010787023,0.000027976086,0.00009706548,0.99510163,0.00026502655,0.00025901536,0.0036177519],"study_design_scores_gemma":[0.000014931613,0.00020290064,0.0024871815,0.0000072136286,0.000019954217,0.0004017824,0.000032796666,0.0049027493,0.98878354,0.00007380749,0.0030586491,0.000014460144],"about_ca_topic_score_codex":0.0005829931,"about_ca_topic_score_gemma":0.001506683,"teacher_disagreement_score":0.0015558137,"about_ca_system_score_codex":0.00032526586,"about_ca_system_score_gemma":0.00025507182,"threshold_uncertainty_score":0.0052046776},"labels":[],"label_agreement":null},{"id":"W2159574133","doi":"10.1109/ted.2007.911094","title":"Characterization of Short-Wavelength-Selective a-Si:H MSM Photoconductors for Large-Area Digital-Imaging Applications","year":2008,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":20,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Simon Fraser University","keywords":"Photodetector; Responsivity; Optoelectronics; Materials science; Photocurrent; Fabrication; Thin-film transistor; Photodiode; Quantum efficiency; Amorphous silicon; Photoconductivity; Thin film; Silicon; Optics; Crystalline silicon; Nanotechnology; Physics","score_opus":0.014740419088149909,"score_gpt":0.22460679086305504,"score_spread":0.20986637177490514,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2159574133","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9939044,0.0007221858,0.0044014696,0.00003089516,0.000010954169,0.000020360136,0.00017370984,0.000055941407,0.00068009755],"genre_scores_gemma":[0.9950153,0.00024387673,0.0040027667,0.0000131437155,0.000005351815,0.000012905385,0.000076590586,0.000007158904,0.0006228172],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999,0.000011580587,0.00000771415,0.000025116376,0.00004325008,0.0000123260015],"domain_scores_gemma":[0.9997801,0.00007994921,0.000034873407,0.000018715604,0.000064525535,0.00002186374],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00023453127,0.00022557222,0.0001412126,0.00025957814,0.0001449099,0.00021848879,0.0002562665,0.00028868928,0.0006239521],"category_scores_gemma":[0.00042294528,0.000097657554,0.000111686095,0.00020595791,0.0001404769,0.00020318814,0.00010856627,0.00013263027,0.00018098427],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000029818459,0.000007384508,0.00061786844,0.000017769062,0.0000031165057,0.000035897643,0.000023300481,0.000046659112,0.99782383,0.000044187458,0.00002066548,0.0013294702],"study_design_scores_gemma":[0.0000040301343,0.0001686394,0.0055113444,0.0000033266133,0.00000935577,0.00020246881,0.000038943253,0.0023811006,0.99112105,0.00003495611,0.00052145164,0.0000032485111],"about_ca_topic_score_codex":0.0007677612,"about_ca_topic_score_gemma":0.0011596036,"teacher_disagreement_score":0.0007677612,"about_ca_system_score_codex":0.00014416856,"about_ca_system_score_gemma":0.00013892501,"threshold_uncertainty_score":0},"labels":[],"label_agreement":null},{"id":"W2162157834","doi":"10.1109/ted.2003.822348","title":"Ultralow Silicon Substrate Noise Crosstalk Using Metal Faraday Cages in an SOI Technology","year":2004,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Radio Frequency Integrated Circuit Design","field":"Engineering","cited_by":39,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Silicon on insulator; Crosstalk; Materials science; Silicon; Optoelectronics; Faraday cage; CMOS; Electronic engineering; Electrical engineering; Engineering; Physics","score_opus":0.015527227970176933,"score_gpt":0.2505557788161603,"score_spread":0.23502855084598337,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2162157834","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.98042905,0.00066512806,0.0113638835,0.00011382874,0.000051766074,0.000015434838,0.00003813847,0.00031917973,0.0070036063],"genre_scores_gemma":[0.9940474,0.00022705151,0.004664585,0.00002515599,0.000014281097,0.000008054505,0.00003466428,0.000017704786,0.0009609759],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99984694,0.000017188135,0.000005848047,0.000031376807,0.00006310364,0.000035535697],"domain_scores_gemma":[0.9998264,0.000026741161,0.0000540892,0.000030763276,0.000030331312,0.00003181202],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00013011579,0.00039159224,0.0003185454,0.00022256294,0.00038375668,0.00045596808,0.00039219487,0.00030375257,0.00042433068],"category_scores_gemma":[0.00014836309,0.00016415055,0.00014512562,0.00016095386,0.00045221497,0.0003861674,0.00033898573,0.0002536202,0.00021959255],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00011529729,0.000024716643,0.00030688877,0.00003743751,0.0000058652554,0.00010522826,0.00005450467,0.00050944963,0.9949758,0.0013800397,0.000114620525,0.002370301],"study_design_scores_gemma":[0.000022441682,0.00045711314,0.001502561,0.0000065516506,0.000018007016,0.00023793383,0.000054198485,0.0043802145,0.9906006,0.00032708136,0.0023795858,0.0000136923145],"about_ca_topic_score_codex":0.00027702286,"about_ca_topic_score_gemma":0.0006628449,"teacher_disagreement_score":0.00045596808,"about_ca_system_score_codex":0.00024223422,"about_ca_system_score_gemma":0.00019973866,"threshold_uncertainty_score":0.0017575622},"labels":[],"label_agreement":null},{"id":"W2163115331","doi":"10.1109/ted.2003.809430","title":"Experimental investigations of the effect of the mode-hopping on the noise properties of InGaAsP fabry-perot multiple-quantum-well laser diodes","year":2003,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Semiconductor Quantum Structures and Devices","field":"Physics and Astronomy","cited_by":11,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McMaster University; Nortel (Canada)","funders":"","keywords":"Materials science; Active layer; Optoelectronics; Diode; Noise (video); Laser; Semiconductor laser theory; Optics; Physics; Layer (electronics)","score_opus":0.01495146644773166,"score_gpt":0.23646776637302855,"score_spread":0.2215162999252969,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2163115331","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9970425,0.00019645467,0.0020777797,0.000015857584,0.0000042868164,0.000009908349,0.00012177121,0.000031814336,0.00049971277],"genre_scores_gemma":[0.9970396,0.00020543965,0.002096039,0.000010430351,0.000005258322,0.000019167963,0.00012129821,0.00001280653,0.0004899386],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9996189,0.00005542041,0.000013158518,0.0000850551,0.00016690948,0.000060611437],"domain_scores_gemma":[0.999193,0.0004099985,0.00010427861,0.00008740101,0.00016923538,0.000036070593],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00036985116,0.0004138742,0.00026817506,0.00021226167,0.0003524465,0.00020448663,0.0003966665,0.00034788233,0.00083012774],"category_scores_gemma":[0.0007814856,0.00017558946,0.00015449502,0.0002226387,0.00045746722,0.00026238887,0.00014574663,0.00020571456,0.00015474344],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00013665119,0.000028469514,0.00095079513,0.00004329308,0.000007099116,0.000052802334,0.000086453605,0.0006533233,0.99633515,0.00012985601,0.000024153858,0.0015519463],"study_design_scores_gemma":[0.000012939704,0.00034184402,0.0056546805,0.000005044056,0.000014655798,0.00012373339,0.00002918503,0.003925599,0.98935485,0.00009924618,0.0004243375,0.000013882845],"about_ca_topic_score_codex":0.0009721109,"about_ca_topic_score_gemma":0.0010442397,"teacher_disagreement_score":0.0009721109,"about_ca_system_score_codex":0.00041577112,"about_ca_system_score_gemma":0.0001531696,"threshold_uncertainty_score":0.0030166507},"labels":[],"label_agreement":null},{"id":"W2163724016","doi":"10.1109/16.936699","title":"Interpretation of the common-emitter offset voltage in heterojunction bipolar transistors","year":2001,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":4,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Institute for Microstructural Sciences","funders":"","keywords":"Bipolar junction transistor; Heterojunction bipolar transistor; Common emitter; Input offset voltage; Heterojunction; Offset (computer science); Heterostructure-emitter bipolar transistor; Optoelectronics; Materials science; Transistor; Voltage; Electrical engineering; Electronic engineering; Computer science; Engineering; Operational amplifier","score_opus":0.009915100817555183,"score_gpt":0.2289038331874954,"score_spread":0.21898873236994024,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2163724016","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.14467373,0.0023829176,0.7855834,0.0009027296,0.00042855937,0.000032789074,0.0004502051,0.0029133132,0.06263235],"genre_scores_gemma":[0.9389367,0.0011710087,0.047986105,0.00015851695,0.00012578013,0.000022645941,0.00020638459,0.0003383474,0.0110545065],"study_design_codex":"theoretical_or_conceptual","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99987304,0.000032172156,0.0000056336926,0.000022419039,0.000052924475,0.000013835606],"domain_scores_gemma":[0.9997749,0.00010214905,0.00003110181,0.00003451812,0.00004245255,0.0000148926],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00018867705,0.00076337997,0.00022657194,0.0009089148,0.00031609347,0.0013506017,0.0006331064,0.00078426494,0.0048145046],"category_scores_gemma":[0.001089333,0.00022569958,0.00026359066,0.0005378469,0.00075805973,0.0011461169,0.00035440407,0.00064447103,0.0007823533],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00032798585,0.00007564397,0.00161057,0.00036060472,0.000029692264,0.0018863243,0.00078504294,0.07620308,0.20648813,0.59244627,0.0055308756,0.11425571],"study_design_scores_gemma":[0.00004766799,0.00017823653,0.0034825425,0.0001228159,0.00004245618,0.0014915643,0.00040500172,0.32188618,0.088210955,0.55379015,0.030273383,0.000069005844],"about_ca_topic_score_codex":0.00043065398,"about_ca_topic_score_gemma":0.0003242321,"teacher_disagreement_score":0.0048145046,"about_ca_system_score_codex":0.00036224976,"about_ca_system_score_gemma":0.00013898317,"threshold_uncertainty_score":0.016106129},"labels":[],"label_agreement":null},{"id":"W2164606487","doi":"10.1109/ted.2006.870284","title":"Electrical-stress effects and device modeling of 0.18-/spl mu/m RF MOSFETs","year":2006,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Radio Frequency Integrated Circuit Design","field":"Engineering","cited_by":19,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"National Research Council Canada","funders":"","keywords":"MOSFET; Materials science; Stress (linguistics); Optoelectronics; Electrical engineering; Electronic engineering; Voltage; Engineering; Transistor","score_opus":0.008911326662019091,"score_gpt":0.21681945002893682,"score_spread":0.20790812336691772,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2164606487","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9213474,0.0009263945,0.07443275,0.000118288306,0.000036672853,0.000025721301,0.00029240476,0.00032408914,0.0024964309],"genre_scores_gemma":[0.99144614,0.00022570725,0.0073040007,0.000016401982,0.000011737046,0.000020402591,0.00007016339,0.00001820161,0.00088725967],"study_design_codex":"bench_or_experimental","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99990416,0.00001732058,0.0000056631393,0.000021527525,0.000038206603,0.000012959039],"domain_scores_gemma":[0.9998252,0.000055451143,0.000052968448,0.00002375712,0.000035437934,0.000007290462],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00011480795,0.0004115059,0.0001836968,0.00015426126,0.00013449694,0.00016507033,0.00044988267,0.00036264348,0.0005257236],"category_scores_gemma":[0.00045256037,0.00014193753,0.00025730825,0.00013982874,0.0002475435,0.00052758906,0.0001285464,0.00011667277,0.00019583615],"study_design_candidate":"simulation_or_modeling","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00021974323,0.00008348016,0.00748909,0.00020475488,0.000055135257,0.00076081103,0.00023999918,0.30500942,0.6590853,0.004050974,0.00053801556,0.022263225],"study_design_scores_gemma":[0.000024185032,0.00068830774,0.00934919,0.000025287703,0.000053859545,0.00061203155,0.000066050925,0.7869367,0.19393735,0.0026309034,0.0056442386,0.000031889736],"about_ca_topic_score_codex":0.0010816832,"about_ca_topic_score_gemma":0.0016205937,"teacher_disagreement_score":0.0010816832,"about_ca_system_score_codex":0.00036860598,"about_ca_system_score_gemma":0.00012832104,"threshold_uncertainty_score":0.0026744604},"labels":[],"label_agreement":null},{"id":"W2165443356","doi":"10.1109/ted.2003.812481","title":"Static characteristics of a-Si:H dual-gate TFTs","year":2003,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":52,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Thin-film transistor; Materials science; Threshold voltage; Subthreshold conduction; Optoelectronics; Transistor; Logic gate; Electrical engineering; Amorphous silicon; Subthreshold slope; Voltage; Dual (grammatical number); Leakage (economics); Silicon; Nanotechnology; Engineering; Crystalline silicon","score_opus":0.008200221896869706,"score_gpt":0.20898360732042048,"score_spread":0.2007833854235508,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2165443356","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99605185,0.0006425221,0.001624191,0.000059411537,0.00002970417,0.000004863109,0.00028738272,0.000077998906,0.0012221822],"genre_scores_gemma":[0.9985362,0.00016323997,0.0002740683,0.000024013296,0.000015723423,0.0000037058703,0.00015806782,0.000013191786,0.000811842],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998785,0.000007148394,0.000007926887,0.00003044865,0.000046765934,0.00002920376],"domain_scores_gemma":[0.9995703,0.0001810685,0.0000540185,0.000027931655,0.000112667556,0.000054024265],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00011766153,0.0002238091,0.0002597398,0.0002835147,0.00017225149,0.0003155512,0.00022528914,0.00032613744,0.001436315],"category_scores_gemma":[0.00052502076,0.000096419004,0.00015767092,0.00023061663,0.00020455214,0.0004223726,0.00014384517,0.00018136621,0.0003498434],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00028415426,0.000018926921,0.0020409618,0.000064309716,0.000020886751,0.00020965473,0.0000771802,0.0009345705,0.9898065,0.00011376846,0.00017153185,0.0062575494],"study_design_scores_gemma":[0.0000301348,0.0009428147,0.015007085,0.000013118973,0.000068777124,0.0008530059,0.00009715283,0.011377963,0.96999174,0.00016417314,0.0014328246,0.0000210683],"about_ca_topic_score_codex":0.00075788744,"about_ca_topic_score_gemma":0.00083443365,"teacher_disagreement_score":0.001436315,"about_ca_system_score_codex":0.00029141005,"about_ca_system_score_gemma":0.00011683364,"threshold_uncertainty_score":0.004804969},"labels":[],"label_agreement":null},{"id":"W2170700498","doi":"10.1109/16.974742","title":"Preparation of thin-film transistors with chemical bath deposited CdSe and CdS thin films","year":2002,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":80,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McGill University","funders":"","keywords":"Thin-film transistor; Threshold voltage; Subthreshold slope; Materials science; Optoelectronics; Subthreshold conduction; Transistor; Field effect; Thin film; Chemical bath deposition; Electron mobility; Semiconductor; Voltage; Analytical Chemistry (journal); Layer (electronics); Electrical engineering; Nanotechnology; Chemistry; Band gap","score_opus":0.007447771377316327,"score_gpt":0.2084867310704171,"score_spread":0.20103895969310076,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2170700498","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.873885,0.0075296373,0.1047371,0.0005585083,0.0006351887,0.00078367145,0.003054801,0.0008571479,0.007959078],"genre_scores_gemma":[0.846198,0.0061130743,0.137677,0.00023583366,0.0001019893,0.000542383,0.0023852133,0.00013487648,0.0066115833],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.999933,0.0000064574647,0.000008226975,0.000018004395,0.000024823257,0.000009568246],"domain_scores_gemma":[0.99987316,0.00004782633,0.000012482408,0.000017045231,0.000032761178,0.000016610824],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00015385625,0.00035928766,0.00026897347,0.0002526688,0.0002760573,0.00023525265,0.00039774072,0.00036860703,0.0014186862],"category_scores_gemma":[0.00043420418,0.00025834906,0.00022527133,0.00026256632,0.00022482437,0.0002318075,0.00010254529,0.00045526316,0.00052720576],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00001561496,0.000007600369,0.000056466313,0.000052427644,0.0000048371367,0.000037365724,0.000010550177,0.00011629174,0.99826944,0.000102977116,0.00007086245,0.0012555084],"study_design_scores_gemma":[0.000012513665,0.000048235346,0.00027591726,0.0000046250075,0.000015343603,0.000051481635,0.000008626555,0.0005705877,0.99699795,0.00006558017,0.0019462152,0.0000030036401],"about_ca_topic_score_codex":0.00071746,"about_ca_topic_score_gemma":0.0016165322,"teacher_disagreement_score":0.0014186862,"about_ca_system_score_codex":0.00024953758,"about_ca_system_score_gemma":0.0002268006,"threshold_uncertainty_score":0.0047459602},"labels":[],"label_agreement":null},{"id":"W2170926317","doi":"10.1109/ted.2005.843876","title":"Effect of Doped Substrate on GaAs–AlGaAs Interfacial Workfunction IR Detector Response Through Cavity Effect","year":2005,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Semiconductor Quantum Structures and Devices","field":"Physics and Astronomy","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Institute for Microstructural Sciences","funders":"","keywords":"Responsivity; Substrate (aquarium); Doping; Materials science; Optoelectronics; Heterojunction; Resonance (particle physics); Detector; Quantum efficiency; Analytical Chemistry (journal); Optics; Photodetector; Chemistry; Physics; Atomic physics","score_opus":0.008505104334454828,"score_gpt":0.2747713982602652,"score_spread":0.26626629392581036,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2170926317","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9971771,0.0003147546,0.0016056957,0.000024421353,0.000011547962,0.0000060578495,0.000039322815,0.000064490916,0.0007566325],"genre_scores_gemma":[0.9967681,0.00020793434,0.0023366085,0.000022496844,0.0000041696376,0.0000060378175,0.000050680403,0.000024757814,0.00057929946],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998235,0.000026535718,0.000012702941,0.00005448297,0.000054553788,0.000028213522],"domain_scores_gemma":[0.9995491,0.00021139998,0.00007516163,0.000049604718,0.00008166784,0.000033082997],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00014777349,0.00038966272,0.00024863466,0.0001095043,0.00015527096,0.0005222505,0.0003747299,0.00025111757,0.0011198774],"category_scores_gemma":[0.0005504699,0.0002798089,0.00020426234,0.00011294644,0.00020651717,0.0003072142,0.00025461963,0.0002499469,0.00030391014],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00005038642,0.000006200387,0.00045711597,0.000021908445,0.000007829298,0.000047916194,0.000018663237,0.00009503245,0.9986156,0.000026431015,0.000009723761,0.0006432471],"study_design_scores_gemma":[0.0000037969255,0.000088831424,0.0017118069,0.0000029091611,0.000014818401,0.000075352225,0.000022732766,0.0010306287,0.99677855,0.0000074371246,0.0002595256,0.0000036210272],"about_ca_topic_score_codex":0.0005237582,"about_ca_topic_score_gemma":0.0011067268,"teacher_disagreement_score":0.0011198774,"about_ca_system_score_codex":0.00024893164,"about_ca_system_score_gemma":0.00009776312,"threshold_uncertainty_score":0.0037463903},"labels":[],"label_agreement":null},{"id":"W2219472191","doi":"10.1109/ted.2015.2503718","title":"Recent Developments and Design Challenges of High-Performance Ring Oscillator CMOS Time-to-Digital Converters","year":2015,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Advancements in PLL and VCO Technologies","field":"Engineering","cited_by":97,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McMaster University","funders":"Natural Sciences and Engineering Research Council of Canada; Canada Research Chairs; FedDev Ontario; Canada Foundation for Innovation; CMC Microsystems","keywords":"CMOS; Electronic engineering; Ring oscillator; Converters; Computer science; Noise (video); Phase noise; Time-to-digital converter; Dynamic range; Engineering; Electrical engineering; Jitter; Voltage; Artificial intelligence","score_opus":0.023505477899070724,"score_gpt":0.22257596262348506,"score_spread":0.19907048472441433,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2219472191","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.04923087,0.29502383,0.59900004,0.0050207702,0.0013181575,0.00019322037,0.00016597727,0.0010730048,0.048974197],"genre_scores_gemma":[0.46763325,0.15722379,0.34594452,0.0016226481,0.0020099191,0.00020464332,0.00026931404,0.00020374425,0.024888199],"study_design_codex":"design_other","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99914944,0.00011782716,0.000070524016,0.00017573718,0.0004248529,0.00006166785],"domain_scores_gemma":[0.9986696,0.00047917414,0.00014490202,0.00011039723,0.0005224117,0.00007355725],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0019066101,0.00044458863,0.000510317,0.0006215163,0.00025525282,0.0018883133,0.0014631783,0.0010556002,0.002683413],"category_scores_gemma":[0.0020730807,0.0003826,0.0003101755,0.0008707507,0.00045376128,0.0021961816,0.00047293084,0.0011314998,0.0014474322],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00027731265,0.000112218426,0.0013911116,0.0026162306,0.00007225246,0.00045870556,0.00045594113,0.018458711,0.21359235,0.11161755,0.0055508385,0.6453967],"study_design_scores_gemma":[0.000085012114,0.0018554758,0.0015332683,0.00058847235,0.00021078858,0.0039516776,0.00032780512,0.13226135,0.1961065,0.024301548,0.6385862,0.00019196217],"about_ca_topic_score_codex":0.00042221276,"about_ca_topic_score_gemma":0.00040336137,"teacher_disagreement_score":0.002683413,"about_ca_system_score_codex":0.00083456765,"about_ca_system_score_gemma":0.0006196405,"threshold_uncertainty_score":0.010083199},"labels":[],"label_agreement":null},{"id":"W2245372074","doi":"10.1109/ted.2015.2508672","title":"Characterization of Lag Signal in Amorphous Selenium Detectors","year":2016,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Advanced Semiconductor Detectors and Materials","field":"Engineering","cited_by":3,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Concordia University; University of Waterloo","funders":"","keywords":"Photocurrent; Detector; SIGNAL (programming language); Intensity (physics); Materials science; Light intensity; Lag; Optoelectronics; Electric field; Optics; Current (fluid); Residual; Physics; Mathematics; Computer science","score_opus":0.0071096875851963575,"score_gpt":0.20551694516110894,"score_spread":0.19840725757591257,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2245372074","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9849236,0.00022409283,0.013438718,0.000036474747,0.000011052473,0.000017352779,0.0002068687,0.00017396234,0.000967872],"genre_scores_gemma":[0.9945403,0.0001607753,0.0040677935,0.000014028413,0.0000028156592,0.0000133814365,0.000106758016,0.000016341733,0.0010777881],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99983776,0.000015158533,0.00001043978,0.000051864165,0.00006309764,0.000021627975],"domain_scores_gemma":[0.99956197,0.00018441193,0.000075912736,0.000031602096,0.0001244136,0.000021736816],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00027912762,0.00025497968,0.0002051825,0.00043604334,0.00017081934,0.00044305815,0.00030331762,0.00036331982,0.00088695437],"category_scores_gemma":[0.00069503166,0.00013343223,0.00020627196,0.00037522372,0.0002850167,0.00039937656,0.00016023689,0.00029996876,0.00020510308],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00009727628,0.000027084048,0.0020011116,0.000047156023,0.000008018522,0.00012960705,0.0000933765,0.0008936454,0.9931559,0.00055154454,0.00005623571,0.0029389733],"study_design_scores_gemma":[0.000012338555,0.00026138927,0.0039075254,0.000007750264,0.000010843028,0.00015156729,0.000091146634,0.014531324,0.97990525,0.00025902237,0.0008491932,0.000012544901],"about_ca_topic_score_codex":0.0010045761,"about_ca_topic_score_gemma":0.00087061134,"teacher_disagreement_score":0.0010045761,"about_ca_system_score_codex":0.0003252023,"about_ca_system_score_gemma":0.00024231947,"threshold_uncertainty_score":0.0029671192},"labels":[],"label_agreement":null},{"id":"W2303295990","doi":"10.1109/ted.2016.2529301","title":"Reverse Gate-Current of AlGaN/GaN HFETs: Evidence of Leakage at Mesa Sidewalls","year":2016,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":27,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Concordia University","funders":"","keywords":"Optoelectronics; Materials science; Quantum tunnelling; Leakage (economics); Fabrication; Transistor; Heterojunction; Voltage; Electrical engineering","score_opus":0.022610526616757748,"score_gpt":0.280222803025538,"score_spread":0.25761227640878026,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2303295990","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9985921,0.00031881945,0.00029719053,0.000018238909,0.0000053466647,0.0000035983244,0.00021391934,0.000029675735,0.00052107434],"genre_scores_gemma":[0.9993636,0.00011203744,0.00014984462,0.000007552729,0.0000029912626,0.000003335897,0.000084070285,0.0000065723584,0.00027008145],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998934,0.000007648172,0.000004992086,0.000026483873,0.00003453387,0.000032857803],"domain_scores_gemma":[0.9998105,0.00007071532,0.000043911197,0.000019100793,0.000038531787,0.00001736088],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00012301898,0.00027361783,0.00025267867,0.00026740122,0.00013888275,0.0002565352,0.00040372895,0.00034457992,0.00086978124],"category_scores_gemma":[0.000203742,0.000107165266,0.00016261681,0.0002460613,0.0002442144,0.00032907553,0.00012726431,0.00022864791,0.00015764266],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0002486782,0.000033369375,0.002123039,0.00008412398,0.000026754478,0.0003210444,0.000107536405,0.0005515608,0.99418527,0.00012881425,0.000090010755,0.002099889],"study_design_scores_gemma":[0.000014191217,0.00043781238,0.023374101,0.000014725729,0.000038257134,0.0003608816,0.00011972121,0.0055890405,0.9694101,0.00009865323,0.0005287882,0.000013733614],"about_ca_topic_score_codex":0.0011248259,"about_ca_topic_score_gemma":0.0010022145,"teacher_disagreement_score":0.0011248259,"about_ca_system_score_codex":0.00024639114,"about_ca_system_score_gemma":0.000081801925,"threshold_uncertainty_score":0.00290972},"labels":[],"label_agreement":null},{"id":"W2318687969","doi":"10.1109/ted.2014.2341249","title":"Enhanced Dark Current Suppression of Amorphous Selenium Detector With Use of IGZO Hole Blocking Layer","year":2014,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"ZnO doping and properties","field":"Materials Science","cited_by":18,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Dark current; Detector; Optoelectronics; Electric field; Diode; Indium tin oxide; Materials science; Amorphous solid; Active layer; Analytical Chemistry (journal); Layer (electronics); Physics; Photodetector; Optics; Nanotechnology; Chemistry; Thin-film transistor; Crystallography","score_opus":0.02261463266860577,"score_gpt":0.25157949070922486,"score_spread":0.22896485804061908,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2318687969","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99421376,0.00041599246,0.004473298,0.000047150235,0.000015909494,0.0000075294893,0.000049323942,0.000101072575,0.0006760484],"genre_scores_gemma":[0.9933215,0.00035100334,0.0055139405,0.00002482723,0.000006120442,0.0000054407274,0.00004300985,0.000016466516,0.00071773515],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99988866,0.000016840051,0.000004736366,0.000028736651,0.00003165768,0.000029296192],"domain_scores_gemma":[0.9997434,0.00010376943,0.000044706976,0.00001681384,0.00007497677,0.000016296966],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00017564808,0.0003565601,0.00022945245,0.0001397048,0.00010154971,0.00028352634,0.00041178134,0.00035634555,0.0006246051],"category_scores_gemma":[0.00030319416,0.00013284925,0.0001685052,0.0001689336,0.0002568744,0.00030742402,0.00019501256,0.00021909646,0.00017203056],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000035052875,0.000005158681,0.00021133704,0.000016676438,0.0000024452224,0.000030635278,0.000012536437,0.000042728952,0.999121,0.000038304213,0.000009582476,0.00047446947],"study_design_scores_gemma":[0.0000051317215,0.00007900318,0.0007709955,0.0000020882542,0.0000055095675,0.000033659802,0.000012035011,0.0007420756,0.9981646,0.000011973946,0.00017131395,0.0000017710889],"about_ca_topic_score_codex":0.0005859922,"about_ca_topic_score_gemma":0.00082862814,"teacher_disagreement_score":0.0006246051,"about_ca_system_score_codex":0.00019862082,"about_ca_system_score_gemma":0.00012069957,"threshold_uncertainty_score":0.0020895004},"labels":[],"label_agreement":null},{"id":"W2331691546","doi":"10.1109/ted.2014.2339011","title":"Impact of Isolation-Feature Geometry on Self-Heating of AlGaN/GaN HFETs","year":2014,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":2,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Concordia University","funders":"CMC Microsystems","keywords":"Materials science; Transistor; Heterojunction; Optoelectronics; Enhanced Data Rates for GSM Evolution; Channel (broadcasting); Field-effect transistor; Wide-bandgap semiconductor; Millimeter; Electrical engineering; Voltage; Optics; Engineering; Physics; Telecommunications","score_opus":0.006958219583511566,"score_gpt":0.25836192578263,"score_spread":0.25140370619911845,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2331691546","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9989736,0.00008867049,0.0004483773,0.000007414015,0.0000034172624,0.0000028369736,0.000055149038,0.000019190224,0.0004012874],"genre_scores_gemma":[0.9997838,0.000021291717,0.00009319781,0.0000022409888,0.0000013734261,0.0000015746317,0.000027755099,0.000004982132,0.000063795735],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999032,0.0000070392925,0.0000047097287,0.000029568577,0.000023867278,0.00003156252],"domain_scores_gemma":[0.9997008,0.00012632737,0.0000736483,0.000034673165,0.000039264934,0.000025398755],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00009963222,0.00019915882,0.00020063136,0.0001539571,0.0001431135,0.00034326807,0.0002098905,0.0001685301,0.00074196287],"category_scores_gemma":[0.00040506182,0.00013956166,0.00014244218,0.00012090369,0.00020748407,0.00024500457,0.00018401972,0.00014328105,0.000117213596],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00026023254,0.00003223128,0.007592359,0.000060466624,0.000029610697,0.00023829822,0.000094394985,0.0034692942,0.98514265,0.00012000822,0.00007370956,0.0028867763],"study_design_scores_gemma":[0.00001777374,0.00062823563,0.08338986,0.000009263528,0.000055225686,0.0004097566,0.00015650688,0.00979234,0.90496534,0.0000730086,0.00048356722,0.000019133671],"about_ca_topic_score_codex":0.00044480903,"about_ca_topic_score_gemma":0.00075365766,"teacher_disagreement_score":0.00074196287,"about_ca_system_score_codex":0.00023229913,"about_ca_system_score_gemma":0.00009415146,"threshold_uncertainty_score":0.0024821162},"labels":[],"label_agreement":null},{"id":"W2332905384","doi":"10.1109/ted.2016.2537879","title":"A Comprehensive and Accurate Analytical SPAD Model for Circuit Simulation","year":2016,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Advanced Optical Sensing Technologies","field":"Physics and Astronomy","cited_by":62,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McMaster University","funders":"Canada Foundation for Innovation; Canadian Cancer Society; CMC Microsystems","keywords":"Computer science; Single-photon avalanche diode; Electronic engineering; Photon counting; Semiconductor device modeling; Photodetector; Sensitivity (control systems); Detector; Avalanche photodiode; Engineering; Physics; Optoelectronics; CMOS","score_opus":0.043087302684951874,"score_gpt":0.31443356861456034,"score_spread":0.2713462659296085,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2332905384","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.012612535,0.0005364101,0.96422756,0.00024960237,0.00009679089,0.00015986865,0.001320319,0.002855695,0.017941207],"genre_scores_gemma":[0.57435143,0.0019217749,0.38927612,0.00033998128,0.000096069314,0.0015933531,0.0027185888,0.000693704,0.029008964],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9996681,0.000045311986,0.00001878247,0.00004328746,0.00018041895,0.000044044176],"domain_scores_gemma":[0.9996176,0.00012316699,0.00003462564,0.00005766767,0.00015647408,0.000010470172],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0003091776,0.00076606974,0.0007041405,0.0007525861,0.00048035217,0.00076657214,0.0017342147,0.0010451075,0.007353449],"category_scores_gemma":[0.0009413375,0.0004986725,0.0009931041,0.000551013,0.00027172992,0.0010515522,0.0004763835,0.0010160867,0.002079949],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000021649937,0.000020780155,0.00022543709,0.00011381813,0.000016011003,0.00006745817,0.000029609066,0.9699112,0.0054006907,0.0093460865,0.0015016696,0.0133455405],"study_design_scores_gemma":[0.0000049018477,0.000011620872,0.00004010071,0.000006859442,0.000004648462,0.000021394733,0.0000032901855,0.99460584,0.0010288004,0.0013433658,0.0029251003,0.0000041017997],"about_ca_topic_score_codex":0.0059863767,"about_ca_topic_score_gemma":0.0051246015,"teacher_disagreement_score":0.007353449,"about_ca_system_score_codex":0.0010174724,"about_ca_system_score_gemma":0.0015277927,"threshold_uncertainty_score":0.024599731},"labels":[],"label_agreement":null},{"id":"W2334089083","doi":"10.1109/ted.2014.2348540","title":"Lateral Organic Semiconductor Photodetector. Part I: Use of an Insulating Layer for Low Dark Current","year":2014,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Organic Electronics and Photovoltaics","field":"Engineering","cited_by":11,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Polytechnique Montréal; University of Waterloo","funders":"","keywords":"Photodetector; Dark current; Materials science; Image sensor; Optoelectronics; Organic semiconductor; Semiconductor; Computer science; Electrical engineering; Electronic engineering; Engineering; Artificial intelligence","score_opus":0.01926153340483677,"score_gpt":0.24118075149497073,"score_spread":0.22191921809013396,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2334089083","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.81729436,0.0071082483,0.14295702,0.00091637636,0.0004762616,0.00038920486,0.0019219442,0.0023176817,0.026618922],"genre_scores_gemma":[0.932587,0.0022807505,0.044154674,0.00041647744,0.000046418434,0.00022964476,0.00074195024,0.00007562899,0.019467417],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998703,0.000009606523,0.000007797648,0.000040850835,0.00004977768,0.000021698115],"domain_scores_gemma":[0.99992514,0.000025586616,0.000016394279,0.00000903328,0.0000146470165,0.00000908484],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0001459942,0.00031506244,0.00013686593,0.0002439747,0.00024075211,0.0003779237,0.00040616054,0.00045805107,0.0036705835],"category_scores_gemma":[0.00020149424,0.00016095261,0.0001593252,0.00024847826,0.00027347883,0.0003553048,0.00026895604,0.00031943832,0.001400117],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000037321537,0.000024320656,0.00018209919,0.00010889767,0.000005422967,0.00006419132,0.00001489668,0.000104725965,0.98928905,0.00066958496,0.0005130271,0.008986463],"study_design_scores_gemma":[0.0000063820307,0.0001125576,0.0009033526,0.00000784935,0.000007700775,0.00014920905,0.000012055274,0.0015997144,0.9894243,0.00007297699,0.0076984074,0.000005629743],"about_ca_topic_score_codex":0.0004675758,"about_ca_topic_score_gemma":0.0011306329,"teacher_disagreement_score":0.0036705835,"about_ca_system_score_codex":0.00046690434,"about_ca_system_score_gemma":0.00030550122,"threshold_uncertainty_score":0.012279272},"labels":[],"label_agreement":null},{"id":"W2414490626","doi":"10.1109/ted.2016.2572719","title":"Effective Drive Current for Pass-Gate Transistors","year":2016,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":10,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Transistor; CMOS; Computer science; Electrical engineering; Electronic engineering; Physics; Topology (electrical circuits); Algorithm; Voltage; Optoelectronics; Engineering","score_opus":0.011663053404151138,"score_gpt":0.2524135424654895,"score_spread":0.2407504890613384,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2414490626","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.023150347,0.0016305399,0.9478093,0.00020301543,0.00015192876,0.00009434622,0.00027746512,0.0010845818,0.025598438],"genre_scores_gemma":[0.7242931,0.002678364,0.23541468,0.00040422406,0.0002262122,0.00035083355,0.00072474306,0.0004560106,0.035451815],"study_design_codex":"simulation_or_modeling","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9995461,0.000052644147,0.000030840383,0.00009697655,0.0002286016,0.000044740285],"domain_scores_gemma":[0.9996131,0.00013892075,0.00006160111,0.000060284685,0.000115365896,0.000010704565],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0003652624,0.00090107875,0.0003123751,0.00057681376,0.0002489281,0.0010785136,0.0016327206,0.00068212574,0.0028974076],"category_scores_gemma":[0.0016051327,0.00023644019,0.0003898091,0.0004274806,0.00039448723,0.0016224125,0.00042796013,0.00057316496,0.0013328703],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0001996959,0.000100668934,0.0020884934,0.00067801255,0.00010348889,0.0008944634,0.00051741436,0.29428282,0.27399853,0.24631357,0.011040494,0.16978239],"study_design_scores_gemma":[0.000011765858,0.0001345227,0.00069901336,0.000039387938,0.00004439389,0.00058777333,0.000042622236,0.8811857,0.06933749,0.021090277,0.02679079,0.00003626065],"about_ca_topic_score_codex":0.00076923764,"about_ca_topic_score_gemma":0.0014261615,"teacher_disagreement_score":0.0028974076,"about_ca_system_score_codex":0.0010807172,"about_ca_system_score_gemma":0.00035658595,"threshold_uncertainty_score":0.009692788},"labels":[],"label_agreement":null},{"id":"W2466732169","doi":"10.1109/ted.2016.2586418","title":"Interfacial Contact Effects in Top Gated Zinc Oxide Thin Film Transistors Grown by Atomic Layer Deposition","year":2016,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"ZnO doping and properties","field":"Materials Science","cited_by":14,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Alberta","funders":"Science and Engineering Research Council; CMC Microsystems","keywords":"Thin-film transistor; Materials science; Atomic layer deposition; X-ray photoelectron spectroscopy; Optoelectronics; Schottky barrier; Electrode; Layer (electronics); Dielectric spectroscopy; Oxide; Nanotechnology; Chemical engineering; Metallurgy; Chemistry; Diode; Electrochemistry","score_opus":0.008787354544072113,"score_gpt":0.22938409706392424,"score_spread":0.22059674251985212,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2466732169","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9965605,0.0007396255,0.0015442875,0.00003367488,0.000021817013,0.000009371702,0.00007910674,0.00008002152,0.00093152],"genre_scores_gemma":[0.9984756,0.00034989617,0.00074865663,0.000014741536,0.0000064083333,0.000004285505,0.0000392924,0.000015755972,0.00034524675],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998702,0.000008219794,0.0000068479594,0.000028358949,0.00005915131,0.000027298192],"domain_scores_gemma":[0.9997992,0.00009002384,0.000041849165,0.000015106732,0.000029884128,0.000023917086],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000083612365,0.00024358934,0.0002752206,0.00017809511,0.00022494186,0.0005546073,0.00038112546,0.000259244,0.00094768626],"category_scores_gemma":[0.00039159,0.00020907777,0.00014454269,0.00020396186,0.00021469708,0.00035883393,0.00026599382,0.00022741189,0.00018367947],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00006884554,0.000013802014,0.00046251906,0.000039067032,0.000004686749,0.0001579688,0.00003242247,0.00015911456,0.9976337,0.000085648775,0.00002644154,0.0013158468],"study_design_scores_gemma":[0.000017490127,0.00014475198,0.0035439085,0.0000064223345,0.000020529922,0.00015382045,0.00003875417,0.0033922545,0.9920947,0.00005507501,0.00052741874,0.000004767197],"about_ca_topic_score_codex":0.0013988848,"about_ca_topic_score_gemma":0.0020314753,"teacher_disagreement_score":0.0013988848,"about_ca_system_score_codex":0.00040469342,"about_ca_system_score_gemma":0.00013461614,"threshold_uncertainty_score":0.0031703115},"labels":[],"label_agreement":null},{"id":"W2508917673","doi":"10.1109/ted.2016.2602209","title":"Switching-Speed Limitations of Ferroelectric Negative-Capacitance FETs","year":2016,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Ferroelectric and Negative Capacitance Devices","field":"Engineering","cited_by":85,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Qualcomm (Canada); University of Alberta","funders":"Natural Sciences and Engineering Research Council of Canada; Alberta Innovates - Technology Futures","keywords":"Ferroelectricity; Capacitance; Negative impedance converter; Scaling; Materials science; Voltage; Subthreshold conduction; Switching time; Condensed matter physics; Optoelectronics; Physics; Transistor; Electrical engineering; Engineering; Electrode; Voltage divider; Mathematics; Dielectric; Quantum mechanics","score_opus":0.027742799586533817,"score_gpt":0.2256199519392315,"score_spread":0.1978771523526977,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2508917673","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.97872615,0.0023965037,0.010179164,0.00040105532,0.00007165457,0.000009846967,0.000093432725,0.00018689549,0.00793532],"genre_scores_gemma":[0.99811745,0.00039074238,0.00091960345,0.000021949221,0.000011716101,0.000003369394,0.000022881615,0.000005755573,0.00050658465],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99989593,0.000012986113,0.000004941841,0.000019277344,0.00004754555,0.000019291874],"domain_scores_gemma":[0.9996069,0.00025301037,0.000030976236,0.000028239441,0.000056015662,0.000024822972],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00018568427,0.00020262941,0.00023646995,0.00017516488,0.00020137093,0.00038240818,0.00041501457,0.00044189338,0.0013966598],"category_scores_gemma":[0.0007726188,0.00010494311,0.000082292405,0.00014425973,0.00022962753,0.0006308961,0.00014661948,0.00022872137,0.00031250616],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00044892394,0.00007298581,0.0022821089,0.00026728102,0.000022403125,0.0004813518,0.00016810918,0.021210227,0.92485785,0.020106597,0.0011115107,0.02897067],"study_design_scores_gemma":[0.000044019544,0.00044359616,0.0031181953,0.000054144653,0.000037790196,0.0010850041,0.00009606192,0.3528211,0.6261765,0.007558393,0.008525245,0.000039909188],"about_ca_topic_score_codex":0.0005219173,"about_ca_topic_score_gemma":0.0008316772,"teacher_disagreement_score":0.0013966598,"about_ca_system_score_codex":0.0003747413,"about_ca_system_score_gemma":0.0001356819,"threshold_uncertainty_score":0.004672289},"labels":[],"label_agreement":null},{"id":"W2512133602","doi":"10.1109/ted.2016.2597156","title":"Study of Gate Width Influence on Extrinsic Transconductance in AlGaN/GaN Heterostructure Field-Effect Transistors With Polarization Coulomb Field Scattering","year":2016,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":20,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Alberta","funders":"National Natural Science Foundation of China","keywords":"Transconductance; Scattering; Optoelectronics; Materials science; Heterojunction; Field-effect transistor; Polarization (electrochemistry); Condensed matter physics; Transistor; Optics; Physics; Chemistry; Voltage","score_opus":0.0072753472537653505,"score_gpt":0.24141056316345763,"score_spread":0.23413521590969227,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2512133602","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.998538,0.00017926723,0.000839395,0.000014336449,0.0000067283163,0.000003775579,0.000041202416,0.000018440976,0.0003588023],"genre_scores_gemma":[0.9990716,0.00012399424,0.00057051494,0.000008286474,0.0000045185657,0.0000037900568,0.000030435831,0.000008552762,0.00017827078],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999087,0.000009029703,0.000005657249,0.000024579056,0.000033485037,0.00001859308],"domain_scores_gemma":[0.99969447,0.0001138476,0.000065320215,0.00003337261,0.00007003707,0.000022947774],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00016435071,0.00033023424,0.00020955634,0.00015891826,0.00012053085,0.00026602653,0.00021595127,0.00020168781,0.00030101242],"category_scores_gemma":[0.0003217723,0.0001484282,0.00017902182,0.00017982161,0.00017627019,0.00028532065,0.00012838298,0.00019006596,0.000059241247],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000058293994,0.000017221879,0.0006886505,0.00002179291,0.000013665215,0.000090666465,0.00003342346,0.00048664273,0.99737704,0.00006898942,0.000020248839,0.0011234555],"study_design_scores_gemma":[0.000013006969,0.00024797925,0.007539723,0.0000052995147,0.000034979337,0.00016441935,0.000036153633,0.008612522,0.98299974,0.00005609863,0.00028031372,0.000009795113],"about_ca_topic_score_codex":0.0005571186,"about_ca_topic_score_gemma":0.0008010986,"teacher_disagreement_score":0.0005571186,"about_ca_system_score_codex":0.00020116675,"about_ca_system_score_gemma":0.00009867753,"threshold_uncertainty_score":0.0014595389},"labels":[],"label_agreement":null},{"id":"W2528554296","doi":"10.1109/ted.2017.2671365","title":"a-Si:H TFT-Silicon Hybrid Low-Energy X-Ray Detector","year":2017,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Advanced X-ray Imaging Techniques","field":"Physics and Astronomy","cited_by":5,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Natural Sciences and Engineering Research Council of Canada; Canada Foundation for Innovation","keywords":"Silicon; Thin-film transistor; Detector; X-ray detector; Amorphous silicon; Optoelectronics; Pixel; Transistor; Diffraction; Image resolution; Materials science; Optics; Photon; Physics; Crystalline silicon; Nanotechnology; Voltage","score_opus":0.008909467677079555,"score_gpt":0.2659811684435384,"score_spread":0.25707170076645885,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2528554296","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.90384686,0.00142593,0.0759131,0.00031782227,0.0002408369,0.00010305197,0.0012716571,0.0021569538,0.0147238625],"genre_scores_gemma":[0.9234021,0.0004270716,0.06325497,0.00016171239,0.000053193045,0.000057840258,0.00050877954,0.00007423161,0.012060126],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998822,0.000005452071,0.0000055850423,0.00003728797,0.000053437765,0.000016065813],"domain_scores_gemma":[0.999899,0.000027231114,0.000017766055,0.000014899436,0.000026860323,0.000014266906],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00009877638,0.00015668655,0.00020168608,0.0001700484,0.00019775855,0.00047666693,0.0007128405,0.0004763204,0.0030265786],"category_scores_gemma":[0.00012018403,0.00016652347,0.0001521447,0.00019600763,0.00017936766,0.00034099666,0.00016349292,0.00023130854,0.0011121528],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000043831795,0.000021396001,0.00052685285,0.000048163645,0.000016912947,0.000092557006,0.000012017051,0.00024126466,0.9927779,0.000383895,0.0005938748,0.005241399],"study_design_scores_gemma":[0.00002045864,0.0002530755,0.0032319606,0.0000061653695,0.000023244662,0.0006660692,0.000024436866,0.0096258195,0.9777583,0.00015155198,0.008225073,0.000013921237],"about_ca_topic_score_codex":0.00072575227,"about_ca_topic_score_gemma":0.0018729762,"teacher_disagreement_score":0.0030265786,"about_ca_system_score_codex":0.0003753069,"about_ca_system_score_gemma":0.00025898684,"threshold_uncertainty_score":0.010124922},"labels":[],"label_agreement":null},{"id":"W2528586090","doi":"10.1109/ted.2016.2612586","title":"Viability of Piezojunction Effect for Microresonator Applications","year":2016,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Advanced MEMS and NEMS Technologies","field":"Engineering","cited_by":4,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Simon Fraser University","funders":"Natural Sciences and Engineering Research Council of Canada; Simon Fraser University; CMC Microsystems","keywords":"Capacitive sensing; Resonator; Diode; Biasing; Optoelectronics; Materials science; Power (physics); SIGNAL (programming language); Q factor; CMOS; Electrical engineering; Electronic engineering; Acoustics; Physics; Engineering; Voltage; Computer science","score_opus":0.005038736457590877,"score_gpt":0.2290443867138517,"score_spread":0.22400565025626082,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2528586090","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.7381063,0.02035202,0.21925354,0.00088768126,0.00042533528,0.00009959108,0.00013546452,0.000727546,0.02001245],"genre_scores_gemma":[0.9704138,0.0023622073,0.025015688,0.00007565478,0.000061301704,0.000024551815,0.000026777208,0.00002402863,0.0019960133],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99978346,0.000022307626,0.0000070697324,0.000052708547,0.00011126054,0.000023224284],"domain_scores_gemma":[0.9998029,0.0001011127,0.000024258023,0.000023818,0.000037588048,0.000010354019],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0002454062,0.0003577493,0.00022826498,0.00012737358,0.00015207812,0.00036421593,0.00044916855,0.00045798055,0.0009823921],"category_scores_gemma":[0.0004278659,0.00013730893,0.00018880519,0.00008158465,0.00028704834,0.0006433385,0.00028715451,0.00033281647,0.00029446598],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00002789323,0.000013209069,0.00025868256,0.00010699912,0.0000044419194,0.000114601666,0.00003418391,0.00045489657,0.9847339,0.0026739046,0.00008953097,0.0114877205],"study_design_scores_gemma":[0.000009229356,0.000591051,0.0018610132,0.000018990506,0.000022703056,0.00078944344,0.000046832556,0.01646861,0.966224,0.0013267815,0.012618652,0.00002270862],"about_ca_topic_score_codex":0.00012063445,"about_ca_topic_score_gemma":0.00017829544,"teacher_disagreement_score":0.0009823921,"about_ca_system_score_codex":0.0001860671,"about_ca_system_score_gemma":0.00013184031,"threshold_uncertainty_score":0.003286481},"labels":[],"label_agreement":null},{"id":"W2567923325","doi":"10.1109/ted.2016.2644202","title":"Biased Photoresponse Analysis of Al–ZnO Heterojunctions with n- and p-Type Silicon","year":2017,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Semiconductor materials and interfaces","field":"Physics and Astronomy","cited_by":13,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Heterojunction; Photocurrent; Materials science; Rectification; Optoelectronics; Silicon; Diode; Quantum efficiency; Reverse bias; Sputtering; Biasing; Photoconductivity; Dark current; Thin film; Photodetector; Voltage; Nanotechnology; Physics","score_opus":0.01851548927770467,"score_gpt":0.2833630840826942,"score_spread":0.26484759480498954,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2567923325","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99720925,0.0003983554,0.0012714464,0.000020450934,0.00003540749,0.000016638038,0.00023482055,0.00004491208,0.00076863007],"genre_scores_gemma":[0.99738234,0.00034263718,0.0012268719,0.000020155601,0.000008039724,0.000015680633,0.00013207927,0.000012612367,0.0008595467],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998222,0.000011675304,0.000010069215,0.00005737477,0.00007436121,0.000024422605],"domain_scores_gemma":[0.99983275,0.00003475681,0.000032824464,0.00001806395,0.000067128785,0.0000144981905],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00013551264,0.000287469,0.00020006172,0.00020433674,0.0001326734,0.00024397727,0.00052070955,0.0003628444,0.0009205719],"category_scores_gemma":[0.00023237467,0.00017755355,0.00030031902,0.00032900932,0.0001617633,0.00024912466,0.0001307375,0.00023783474,0.00016164363],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000023230434,0.000009461381,0.000250848,0.000023544717,0.000010626361,0.000070303606,0.000024379995,0.00009536383,0.99883956,0.000031709147,0.000026611682,0.0005944493],"study_design_scores_gemma":[0.00001213251,0.0002095715,0.013748926,0.000006877216,0.00003425304,0.00013082684,0.00006814258,0.0027535034,0.9824107,0.000042594336,0.00057504495,0.0000073950123],"about_ca_topic_score_codex":0.0018375865,"about_ca_topic_score_gemma":0.0029427232,"teacher_disagreement_score":0.0018375865,"about_ca_system_score_codex":0.00044055478,"about_ca_system_score_gemma":0.00008706403,"threshold_uncertainty_score":0.0036538243},"labels":[],"label_agreement":null},{"id":"W2588641186","doi":"10.1109/ted.2017.2655520","title":"Impact of Short-Wavelength and Long-Wavelength Line-Edge Roughness on the Variability of Ultrascaled FinFETs","year":2017,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":6,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Alberta","funders":"Natural Sciences and Engineering Research Council of Canada; Alberta Innovates - Technology Futures; International Business Machines Corporation","keywords":"Surface finish; Wavelength; Amplitude; Saturation (graph theory); Physics; Threshold voltage; Voltage; Enhanced Data Rates for GSM Evolution; Optoelectronics; Surface roughness; Line (geometry); Materials science; Computational physics; Condensed matter physics; Optics; Computer science; Telecommunications; Quantum mechanics; Transistor; Mathematics","score_opus":0.026831860724177994,"score_gpt":0.2879568110637094,"score_spread":0.2611249503395314,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2588641186","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99583375,0.000067364184,0.0032366435,0.000044149154,0.000006279526,0.000003590566,0.00005302402,0.000046853547,0.00070832454],"genre_scores_gemma":[0.9995672,0.000017505101,0.0003164592,0.000005600919,0.000001768848,0.0000022308534,0.000019471872,0.0000069864755,0.00006275146],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9998714,0.000022750124,0.0000065314794,0.000028754685,0.000037425398,0.000033101995],"domain_scores_gemma":[0.99935395,0.000380772,0.000104711595,0.000062340805,0.00006285479,0.000035303467],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00027112206,0.00027013922,0.00028512324,0.0002452392,0.0002715771,0.00043228274,0.0003767237,0.00037275674,0.00051370915],"category_scores_gemma":[0.0011730046,0.00016408482,0.0003197762,0.0002566964,0.0003629999,0.000521923,0.00023299431,0.0002928511,0.00004356288],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00012895634,0.00008423982,0.012844569,0.000046897883,0.000082759514,0.0002819304,0.00008215558,0.9154916,0.064915,0.0019596172,0.00017575212,0.003906482],"study_design_scores_gemma":[0.0000058744054,0.00006255422,0.0042841085,0.0000031300237,0.000012516131,0.000027028449,0.000022149336,0.9869387,0.008200557,0.00035481196,0.00007454671,0.000014041056],"about_ca_topic_score_codex":0.0033313106,"about_ca_topic_score_gemma":0.0038628627,"teacher_disagreement_score":0.0033313106,"about_ca_system_score_codex":0.00070770807,"about_ca_system_score_gemma":0.00033589936,"threshold_uncertainty_score":0.0066238046},"labels":[],"label_agreement":null},{"id":"W2597266713","doi":"10.1109/ted.2017.2677201","title":"The Effect of Pinned Photodiode Shape on Time-of-Flight Demodulation Contrast","year":2017,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Advanced Optical Sensing Technologies","field":"Physics and Astronomy","cited_by":26,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Toronto","funders":"Natural Sciences and Engineering Research Council of Canada; Defense Advanced Research Projects Agency","keywords":"Demodulation; Square (algebra); Photodiode; Sorting; Optics; Time of flight; Optical transfer function; Contrast (vision); Benchmark (surveying); Physics; Computer science; Mathematics; Geometry; Algorithm; Telecommunications","score_opus":0.006330946174099419,"score_gpt":0.25940994203298834,"score_spread":0.25307899585888893,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2597266713","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9739744,0.0006794403,0.020251963,0.00014624724,0.00005082169,0.000042059117,0.000097427335,0.00021474843,0.004542963],"genre_scores_gemma":[0.99192274,0.00015293351,0.007351489,0.000029218952,0.0000042572133,0.000009749748,0.000034850185,0.0000224884,0.00047232726],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9997843,0.000032639764,0.0000112355965,0.00004911467,0.000086772256,0.0000360165],"domain_scores_gemma":[0.9984224,0.001065334,0.00015436784,0.00011425394,0.000209368,0.000034328656],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00048046414,0.00036406316,0.00016780388,0.00022183372,0.0001599842,0.0006436773,0.00056713755,0.00051207066,0.001053763],"category_scores_gemma":[0.0033680832,0.0001914764,0.00014636456,0.00023452681,0.00033788197,0.00066719647,0.0002378395,0.0003166889,0.00019547499],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00073108374,0.000089732814,0.003560869,0.00018610829,0.000028282306,0.00052714365,0.00022692584,0.02509847,0.9437323,0.002250399,0.00029190115,0.023276908],"study_design_scores_gemma":[0.00004527812,0.0011973663,0.0089112045,0.000030785195,0.000042578078,0.0007157783,0.00017199383,0.07201366,0.9145194,0.00036219507,0.0019533285,0.0000363011],"about_ca_topic_score_codex":0.0004843248,"about_ca_topic_score_gemma":0.0005348802,"teacher_disagreement_score":0.001053763,"about_ca_system_score_codex":0.00050485466,"about_ca_system_score_gemma":0.00022850711,"threshold_uncertainty_score":0.0036629438},"labels":[],"label_agreement":null},{"id":"W2602688410","doi":"10.1109/ted.2017.2679727","title":"GaN Nanowire Schottky Barrier Diodes","year":2017,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":23,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"","funders":"Division of Electrical, Communications and Cyber Systems; Queen's University; Queen's University Belfast; National Science Foundation","keywords":"Materials science; Optoelectronics; Schottky diode; Nanowire; Diode; Breakdown voltage; Gallium nitride; Schottky barrier; Transistor; Power semiconductor device; Epitaxy; Fabrication; Wide-bandgap semiconductor; Voltage; Nanotechnology; Electrical engineering; Layer (electronics)","score_opus":0.014329451427018296,"score_gpt":0.26767094331724284,"score_spread":0.25334149189022453,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2602688410","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.4384001,0.007983072,0.5098461,0.00091241475,0.0007786663,0.000138278,0.00048253968,0.001991434,0.039467484],"genre_scores_gemma":[0.9154684,0.0027593477,0.073761344,0.00016261694,0.0001071641,0.000053803025,0.00018923644,0.000041910866,0.007456096],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999385,0.000005696278,0.0000021145709,0.000012594444,0.00003177356,0.000009185804],"domain_scores_gemma":[0.999974,0.0000036365523,0.0000037344753,0.000004407856,0.000009490292,0.0000046666164],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00006841119,0.00014068629,0.00020791341,0.00009966547,0.0001432805,0.00028048066,0.0005128911,0.00030375458,0.0007351979],"category_scores_gemma":[0.000050779305,0.00008810459,0.0002007678,0.00010076126,0.00018122274,0.00037495664,0.00014057338,0.00022719754,0.0002903313],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00004011783,0.000026253347,0.00039571818,0.00013844554,0.000019390374,0.00015084953,0.0000261733,0.0031639405,0.95115316,0.023572614,0.0008327605,0.020480558],"study_design_scores_gemma":[0.000059352664,0.00077753066,0.0040226798,0.000037792423,0.00005386252,0.0018199842,0.00004931718,0.16178907,0.75286055,0.010250884,0.06821317,0.0000658715],"about_ca_topic_score_codex":0.0002117985,"about_ca_topic_score_gemma":0.0004900764,"teacher_disagreement_score":0.0007351979,"about_ca_system_score_codex":0.00020386561,"about_ca_system_score_gemma":0.00018688588,"threshold_uncertainty_score":0.0024594665},"labels":[],"label_agreement":null},{"id":"W2615644558","doi":"10.1109/ted.2017.2699969","title":"Assessment of High-Frequency Performance Limit of Black Phosphorus Field-Effect Transistors","year":2017,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"2D Materials and Applications","field":"Materials Science","cited_by":22,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Field-effect transistor; Physics; Limit (mathematics); Transistor; Topology (electrical circuits); Electrical engineering; Quantum mechanics; Voltage; Mathematics; Engineering","score_opus":0.011128325584774371,"score_gpt":0.27813192185156954,"score_spread":0.26700359626679515,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2615644558","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9696454,0.0014939164,0.020131214,0.00041804925,0.000020708156,0.000023570827,0.00021191544,0.00029695258,0.007758205],"genre_scores_gemma":[0.99283034,0.00054749264,0.00574434,0.000029784875,0.000010554999,0.000028906094,0.00011653657,0.000030151494,0.00066182617],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9997476,0.000032781878,0.000009353933,0.00004070311,0.00014184281,0.00002777962],"domain_scores_gemma":[0.9995697,0.00023454506,0.00004546946,0.000040053823,0.00009163271,0.000018562863],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00048861944,0.00025918172,0.0002514101,0.00031405568,0.00030188667,0.0004894767,0.0006232736,0.0007583943,0.0014309931],"category_scores_gemma":[0.0017177778,0.00013804344,0.00015646142,0.00024409198,0.0003675587,0.001014009,0.00037596043,0.00039173377,0.0003865687],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00039074445,0.00011469955,0.007732366,0.0002873935,0.00005116314,0.00061487977,0.00028513224,0.057227947,0.89746875,0.011246498,0.00077933236,0.023801085],"study_design_scores_gemma":[0.000027044469,0.0006454168,0.006345104,0.00005346844,0.000035451238,0.00033901265,0.00015291912,0.37292498,0.6091318,0.0066907657,0.0036091737,0.00004489126],"about_ca_topic_score_codex":0.0007664089,"about_ca_topic_score_gemma":0.0006450197,"teacher_disagreement_score":0.0014309931,"about_ca_system_score_codex":0.00048832403,"about_ca_system_score_gemma":0.00017874721,"threshold_uncertainty_score":0.004787147},"labels":[],"label_agreement":null},{"id":"W2749789893","doi":"10.1109/ted.2017.2738838","title":"Strain-Induced Armchair Graphene Nanoribbon Resonant-Tunneling Diodes","year":2017,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Graphene research and applications","field":"Materials Science","cited_by":33,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Concordia University","funders":"","keywords":"Resonant-tunneling diode; Quantum tunnelling; Diode; Materials science; Graphene; Graphene nanoribbons; Non-equilibrium thermodynamics; Condensed matter physics; Strain (injury); Strain engineering; Formalism (music); Optoelectronics; Nanotechnology; Quantum well; Physics; Quantum mechanics; Silicon","score_opus":0.03331875668271493,"score_gpt":0.3110425305180413,"score_spread":0.27772377383532637,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2749789893","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9923023,0.00023502544,0.0047944575,0.0000512206,0.000027127355,0.0000060971715,0.00010000238,0.00013655284,0.0023473145],"genre_scores_gemma":[0.99690455,0.000106188956,0.0021710405,0.000010730955,0.000002257245,0.000004429289,0.00004564156,0.00000864722,0.0007464653],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.999941,0.0000054031907,0.0000029567116,0.000012464958,0.000024489651,0.0000137638335],"domain_scores_gemma":[0.99995685,0.000009094186,0.000013602477,0.0000075258404,0.000007872043,0.0000050881604],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00005897756,0.00017263739,0.00014143076,0.00008453925,0.0001075059,0.00015649333,0.0003706042,0.00018289215,0.0006971466],"category_scores_gemma":[0.00011769407,0.00008343348,0.00012384677,0.00012422347,0.000103225684,0.00019181518,0.0001251913,0.00014730473,0.00019667672],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00006346285,0.000019516796,0.00030459434,0.000053786458,0.0000066053344,0.00011017083,0.000017398705,0.0014728139,0.99438286,0.00091921387,0.00010209378,0.0025473826],"study_design_scores_gemma":[0.000011911436,0.00011402282,0.001818362,0.000003959537,0.000011452221,0.00016397113,0.000018576333,0.023947747,0.97227275,0.0004160913,0.0012057334,0.000015358708],"about_ca_topic_score_codex":0.0003466265,"about_ca_topic_score_gemma":0.00076189113,"teacher_disagreement_score":0.0006971466,"about_ca_system_score_codex":0.00017641412,"about_ca_system_score_gemma":0.00008403097,"threshold_uncertainty_score":0.002332151},"labels":[],"label_agreement":null},{"id":"W2752022176","doi":"10.1109/ted.2017.2746006","title":"Design and Fabrication of a High-Power Air-Coupled Capacitive Micromachined Ultrasonic Transducer Array With Concentric Annular Cells","year":2017,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Advanced MEMS and NEMS Technologies","field":"Engineering","cited_by":15,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Natural Sciences and Engineering Research Council of Canada; CMC Microsystems","keywords":"Capacitive micromachined ultrasonic transducers; Ultrasonic sensor; Capacitive sensing; Transducer; Materials science; Acoustics; Surface micromachining; Electrical engineering; Optoelectronics; Optics; Fabrication; Engineering; Physics","score_opus":0.005950127306795173,"score_gpt":0.20891824288952693,"score_spread":0.20296811558273176,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2752022176","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.30315503,0.0026676606,0.68533355,0.0002899761,0.0005002565,0.0004434756,0.0004378383,0.0013070509,0.005865147],"genre_scores_gemma":[0.3942929,0.0008006851,0.6010645,0.00012636448,0.00008391903,0.00032795913,0.00018875535,0.000052841126,0.0030620699],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9997061,0.000020707206,0.000025963149,0.000104144674,0.00010738102,0.000035625188],"domain_scores_gemma":[0.9996661,0.000056676614,0.00008460421,0.00004160993,0.00010707762,0.000043847944],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00027414347,0.0004173319,0.00044705012,0.00026138415,0.00024348972,0.00047929905,0.0013045111,0.00056624063,0.0006060824],"category_scores_gemma":[0.00035073637,0.00037774394,0.00026257205,0.00033994563,0.00028484335,0.0004472666,0.00042499357,0.00037579561,0.00055334903],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000029969447,0.000016192827,0.00021523991,0.00009168937,0.0000066647535,0.000092350434,0.000051122253,0.0015011436,0.988177,0.0007252759,0.00015219567,0.008941195],"study_design_scores_gemma":[0.000022261878,0.00032598706,0.0010315467,0.000007798767,0.000025833911,0.00044931073,0.000036422934,0.029191984,0.95953804,0.00010418098,0.009236916,0.000029586485],"about_ca_topic_score_codex":0.0006464121,"about_ca_topic_score_gemma":0.0010899735,"teacher_disagreement_score":0.0013045111,"about_ca_system_score_codex":0.00045284803,"about_ca_system_score_gemma":0.00067356724,"threshold_uncertainty_score":0.0032856464},"labels":[],"label_agreement":null},{"id":"W2767360510","doi":"10.1109/ted.2017.2766781","title":"Metallic Single Electron Transistors: Impact of Parasitic Capacitances on Small Circuits","year":2017,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Quantum and electron transport phenomena","field":"Physics and Astronomy","cited_by":4,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Canadian Institute for Advanced Research; Institut interdisciplinaire d'innovation technologique; Université de Sherbrooke","funders":"Natural Sciences and Engineering Research Council of Canada; Fonds Québécois de la Recherche sur la Nature et les Technologies; CMC Microsystems","keywords":"Coulomb blockade; Fabrication; Electronic circuit; Capacitance; Transistor; Monte Carlo method; Materials science; Parasitic capacitance; Computational physics; Electronic engineering; Optoelectronics; Physics; Electrical engineering; Voltage; Engineering; Mathematics; Electrode; Quantum mechanics","score_opus":0.02477073786193845,"score_gpt":0.27278294219720317,"score_spread":0.24801220433526472,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2767360510","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.41098484,0.00048121318,0.5668813,0.000297696,0.000074747935,0.00011559314,0.00023145709,0.0012804535,0.019652719],"genre_scores_gemma":[0.93555695,0.00015887925,0.06165032,0.00003321013,0.0000083737095,0.000078056946,0.000047272875,0.00010066978,0.00236625],"study_design_codex":"simulation_or_modeling","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998965,0.000022769671,0.0000024414724,0.000012970129,0.00005365771,0.000011665376],"domain_scores_gemma":[0.999658,0.00022272614,0.000024557174,0.00004796337,0.000029056431,0.000017646675],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00018398988,0.0003755152,0.000319294,0.00017205336,0.00030135553,0.000388745,0.00091604615,0.000593492,0.0017803498],"category_scores_gemma":[0.00097601226,0.0002479219,0.00026872125,0.00019176197,0.0003995904,0.00049505814,0.00023201201,0.0004123859,0.00018258618],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000083424384,0.000041032563,0.00067945063,0.00009431339,0.000034362092,0.00016971506,0.00006785518,0.9214833,0.05178117,0.014552731,0.00044965534,0.010562997],"study_design_scores_gemma":[0.000007423524,0.000034788398,0.00010319432,0.0000036614706,0.0000067738315,0.000029196037,0.0000065904837,0.98782504,0.0097411955,0.001639423,0.0005982762,0.0000044506646],"about_ca_topic_score_codex":0.0018740373,"about_ca_topic_score_gemma":0.0029565757,"teacher_disagreement_score":0.0018740373,"about_ca_system_score_codex":0.0004925867,"about_ca_system_score_gemma":0.00046569333,"threshold_uncertainty_score":0.005955875},"labels":[],"label_agreement":null},{"id":"W2767849965","doi":"10.1109/ted.2017.2766782","title":"Channel Material Dependence of Wave Function Deformation Scattering in Ultrascaled FinFETs","year":2017,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Alberta","funders":"Natural Sciences and Engineering Research Council of Canada; Alberta Innovates - Technology Futures; International Business Machines Corporation","keywords":"Scattering; Channel (broadcasting); Coupling (piping); Materials science; Deformation (meteorology); Effective mass (spring–mass system); Surface finish; Enhanced Data Rates for GSM Evolution; Condensed matter physics; Function (biology); Mechanics; Physics; Optics; Composite material; Classical mechanics; Telecommunications","score_opus":0.018823751525771017,"score_gpt":0.23864996405327854,"score_spread":0.21982621252750753,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2767849965","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99844474,0.000052048934,0.00074443937,0.000023745235,0.0000052574374,0.0000029904427,0.000032834552,0.000025834886,0.00066818326],"genre_scores_gemma":[0.9994803,0.000027265565,0.00034187824,0.0000068859367,0.0000016584761,0.00000385811,0.000023689752,0.0000066467846,0.00010785818],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99992085,0.000008190817,0.0000037895254,0.000014285857,0.000022363629,0.000030418505],"domain_scores_gemma":[0.999701,0.00012029118,0.00007780615,0.0000296727,0.000043537668,0.00002773264],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00020248997,0.00025144772,0.0002842319,0.00029234143,0.00037182026,0.00041674348,0.00042585435,0.00033682305,0.00071626244],"category_scores_gemma":[0.0005920536,0.00019076205,0.00026877507,0.00030871574,0.000490008,0.00045285124,0.00020644156,0.00020747438,0.000055741966],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00041439704,0.00029149052,0.013535352,0.00012466044,0.00012943192,0.0006637936,0.0002160026,0.798002,0.17705831,0.0037148865,0.00044980273,0.0053998367],"study_design_scores_gemma":[0.000022703036,0.00022952903,0.0077127367,0.000010026592,0.00002999108,0.00004971949,0.00007951989,0.9574622,0.0336307,0.0005492815,0.00019463943,0.00002885727],"about_ca_topic_score_codex":0.0056168,"about_ca_topic_score_gemma":0.0064999196,"teacher_disagreement_score":0.0056168,"about_ca_system_score_codex":0.0009993841,"about_ca_system_score_gemma":0.0004631399,"threshold_uncertainty_score":0.0111682415},"labels":[],"label_agreement":null},{"id":"W2782074853","doi":"10.1109/ted.2017.2782769","title":"Nanocrystalline Silicon Lateral MSM Photodetector for Infrared Sensing Applications","year":2018,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":11,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Photodetector; Silicon; Materials science; Optoelectronics; Infrared; Nanocrystalline material; Remote sensing; Optics; Nanotechnology; Physics; Geology","score_opus":0.009210032121405276,"score_gpt":0.22807411762432306,"score_spread":0.21886408550291778,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2782074853","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.7974755,0.005938781,0.16481425,0.0006834657,0.00024290319,0.00013595975,0.0014629476,0.002739994,0.026506266],"genre_scores_gemma":[0.93027246,0.0008922267,0.060313907,0.00022565004,0.000046695994,0.00006303704,0.00028190092,0.000034995304,0.0078691095],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998512,0.000009069513,0.0000068212235,0.00004741741,0.000069237845,0.000016266735],"domain_scores_gemma":[0.9998764,0.000027917567,0.00002841801,0.000015385274,0.000038422364,0.000013517406],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00012216165,0.00024348416,0.00026268675,0.00018399183,0.00019710438,0.00038416754,0.00075628294,0.00031737352,0.0018294295],"category_scores_gemma":[0.00016143662,0.0001283126,0.00020416769,0.00029343998,0.00013170498,0.00041087382,0.00039450376,0.0002261183,0.00072875776],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00006430284,0.000017836343,0.000606608,0.00006788127,0.000012383208,0.00006729286,0.000015747244,0.00020638837,0.9843109,0.00093499484,0.0006385975,0.013056936],"study_design_scores_gemma":[0.000011040681,0.00017507572,0.0017345966,0.000011424931,0.000031028856,0.00040620271,0.000024295025,0.014025279,0.97621244,0.00021316214,0.007142561,0.000012850602],"about_ca_topic_score_codex":0.00092651154,"about_ca_topic_score_gemma":0.0046159127,"teacher_disagreement_score":0.0018294295,"about_ca_system_score_codex":0.0005967478,"about_ca_system_score_gemma":0.00032804714,"threshold_uncertainty_score":0.006120026},"labels":[],"label_agreement":null},{"id":"W2791257689","doi":"10.1109/ted.2018.2807409","title":"Variability Study for Low-Voltage Microelectromechanical Relay Operation","year":2018,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":7,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"National Science Foundation","keywords":"Relay; Voltage; Solid-state relay; Electrical engineering; Digital protective relay; Materials science; Microelectromechanical systems; Dropout voltage; Power (physics); Electronic engineering; Voltage regulator; Engineering; Protective relay; Optoelectronics; Physics","score_opus":0.013682032259977998,"score_gpt":0.2651499676928235,"score_spread":0.2514679354328455,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2791257689","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.97021234,0.00088399794,0.025213573,0.00011311526,0.000029482562,0.000025438594,0.00031133305,0.0001290722,0.0030817036],"genre_scores_gemma":[0.9984888,0.00013679855,0.0009398127,0.000013012324,0.0000135619775,0.000010879059,0.00008994547,0.000018882023,0.0002882419],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9997043,0.000024903262,0.000012781173,0.000079746846,0.00014411246,0.000034159242],"domain_scores_gemma":[0.999164,0.00041662983,0.00013401372,0.000095831674,0.00016308934,0.000026539059],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00029169137,0.00019865624,0.00024833734,0.00028610625,0.00019483636,0.00036128063,0.0004346883,0.0002808944,0.00085584034],"category_scores_gemma":[0.0010951948,0.00009235453,0.00023521297,0.00028656324,0.0001892096,0.0003267534,0.00019050304,0.00044159943,0.0001687113],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00020232356,0.000075873795,0.00498284,0.0001355404,0.0000422903,0.00049392343,0.00020828922,0.013056192,0.9654929,0.0019853872,0.0004435366,0.012880955],"study_design_scores_gemma":[0.00001569537,0.00054162514,0.018410143,0.000021451964,0.000049994556,0.000847087,0.00013201189,0.266719,0.70903087,0.0013153987,0.0028688577,0.000047881847],"about_ca_topic_score_codex":0.0005940178,"about_ca_topic_score_gemma":0.00046298982,"teacher_disagreement_score":0.00085584034,"about_ca_system_score_codex":0.0002877901,"about_ca_system_score_gemma":0.00014356537,"threshold_uncertainty_score":0.0028630495},"labels":[],"label_agreement":null},{"id":"W2796256597","doi":"10.1109/ted.2018.2817509","title":"An Improved Nonlocal History-Dependent Model for Gain and Noise in Avalanche Photodiodes Based on Energy Balance Equation","year":2018,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Semiconductor Quantum Structures and Devices","field":"Physics and Astronomy","cited_by":18,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Saskatchewan","funders":"Conselho Nacional de Desenvolvimento Científico e Tecnológico; Ministero dell’Istruzione, dell’Università e della Ricerca","keywords":"Avalanche photodiode; APDS; Impact ionization; Noise (video); Physics; Ionization; Computational physics; Optoelectronics; Classification of discontinuities; Diode; Computer science; Optics; Mathematics; Quantum mechanics; Detector; Mathematical analysis; Ion; Artificial intelligence","score_opus":0.018004643935889023,"score_gpt":0.25775592628466193,"score_spread":0.2397512823487729,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2796256597","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.03222289,0.0005383478,0.95838964,0.00022615165,0.00006977347,0.00009165656,0.00020518225,0.00025852045,0.007997784],"genre_scores_gemma":[0.88355786,0.0012734684,0.065955,0.00034749293,0.00011346771,0.0005792869,0.00039039977,0.00027606345,0.047507122],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99967694,0.0000495867,0.00001811081,0.00008452384,0.00013182676,0.000039008075],"domain_scores_gemma":[0.9996555,0.00013142177,0.00004592977,0.000035114233,0.00011143019,0.000020633519],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0005837799,0.0008472044,0.0009429224,0.00063469354,0.00042574556,0.001032503,0.0026041018,0.0016013554,0.0030071808],"category_scores_gemma":[0.0010789077,0.00055045635,0.0012998662,0.0005452566,0.00066341873,0.002498738,0.00078619877,0.0010909251,0.00063764234],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00005180731,0.000052738706,0.0008069038,0.00009757807,0.00005518921,0.00030122418,0.0001468839,0.930312,0.019170444,0.039838098,0.00062534556,0.00854187],"study_design_scores_gemma":[0.0000033653034,0.000008473646,0.00009233709,0.0000024747146,0.0000056312238,0.000018760651,0.0000037341,0.99675447,0.0004912198,0.0023319284,0.00028165156,0.000005898608],"about_ca_topic_score_codex":0.0044501624,"about_ca_topic_score_gemma":0.0032531777,"teacher_disagreement_score":0.0044501624,"about_ca_system_score_codex":0.0015289707,"about_ca_system_score_gemma":0.0007489599,"threshold_uncertainty_score":0.011093438},"labels":[],"label_agreement":null},{"id":"W2800538507","doi":"10.1109/ted.2018.2827169","title":"Improved Circuit Model Fitting of Inkjet-Printed OTFTs and a Proposal for Standardized Parameter Reporting","year":2018,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Organic Electronics and Photovoltaics","field":"Engineering","cited_by":5,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"National Research Council Canada","funders":"National Research Council Canada","keywords":"Computer science; Metric (unit); Standardization; Thin-film transistor; Transistor; Electronic engineering; Electronic circuit; Materials science; Electrical engineering; Engineering; Nanotechnology; Voltage","score_opus":0.01653358929732432,"score_gpt":0.25657091491490935,"score_spread":0.24003732561758503,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2800538507","genre_codex":"methods","genre_gemma":"methods","domain_codex":null,"domain_gemma":"reporting","model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"methods","genre_consensus":"methods","domain_candidate":"reporting","domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.016841171,0.0001555255,0.9782874,0.00013852475,0.0001068638,0.00017218043,0.00020570053,0.0029670198,0.0011256618],"genre_scores_gemma":[0.22443056,0.00050417753,0.76945275,0.00009643241,0.00006094062,0.000526425,0.0014713128,0.0010740791,0.002383278],"study_design_codex":"design_other","study_design_gemma":"theoretical_or_conceptual","domain_scores_codex":[0.9964929,0.00067204493,0.00038382676,0.00045995365,0.0018688525,0.0001224443],"domain_scores_gemma":[0.9935674,0.0012460538,0.0005895514,0.0028601247,0.0016917775,0.000044957233],"candidate_categories":["metaresearch"],"consensus_categories":[],"category_scores_codex":[0.0055156187,0.0016477447,0.0009846344,0.0017707336,0.00044729922,0.0024505884,0.002720587,0.0011707514,0.0019885595],"category_scores_gemma":[0.015067645,0.0007022895,0.0012824574,0.0023293754,0.00055641786,0.003436944,0.0011795245,0.0020495895,0.00093855814],"study_design_candidate":"theoretical_or_conceptual","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0002879526,0.0004274761,0.0033882146,0.00047519486,0.00015238367,0.0005823758,0.0006144835,0.3008565,0.32714668,0.03434009,0.004483968,0.3272447],"study_design_scores_gemma":[0.0000334395,0.00026598887,0.0011194214,0.00005392826,0.00007166928,0.00033221845,0.00008709188,0.77781963,0.1977159,0.006683536,0.01567423,0.00014292897],"about_ca_topic_score_codex":0.0012054599,"about_ca_topic_score_gemma":0.0015037754,"teacher_disagreement_score":0.99448436,"about_ca_system_score_codex":0.0010025086,"about_ca_system_score_gemma":0.0014454927,"threshold_uncertainty_score":0.029169738},"labels":[],"label_agreement":null},{"id":"W2808897403","doi":"10.1109/ted.2018.2844741","title":"Intrinsic Performance of Germanane Schottky Barrier Field-Effect Transistors","year":2018,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Graphene research and applications","field":"Materials Science","cited_by":5,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Natural Sciences and Engineering Research Council of Canada; University of Waterloo; Compute Canada","keywords":"Schottky barrier; Materials science; Ohmic contact; Field-effect transistor; Optoelectronics; Schottky diode; Transistor; Band gap; Germanium; Semiconductor; Leakage (economics); Condensed matter physics; Silicon; Electrical engineering; Nanotechnology; Physics; Diode; Voltage","score_opus":0.007958995777360861,"score_gpt":0.265992683840457,"score_spread":0.2580336880630961,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2808897403","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99677974,0.00043031544,0.0007058,0.00009597314,0.000012562432,0.000004572509,0.00029704976,0.00007141205,0.0016025055],"genre_scores_gemma":[0.99890554,0.00017896999,0.00033129856,0.000013056086,0.0000036452989,0.000005593924,0.00016419232,0.000014893265,0.00038269887],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998716,0.000014573364,0.000005899998,0.000027852468,0.000045457393,0.000034649274],"domain_scores_gemma":[0.9998217,0.000078783436,0.000027040103,0.000014299855,0.000041765263,0.000016416174],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00022487453,0.00032719914,0.0004413371,0.00019927394,0.00025506283,0.00045563374,0.00059724855,0.0005329824,0.0015537832],"category_scores_gemma":[0.00062588,0.00015449914,0.00024089447,0.0003765334,0.00026926497,0.00063903583,0.00018615332,0.00018640075,0.0002818846],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0012004857,0.00024052367,0.013110606,0.00063550164,0.00039416752,0.00076966034,0.00031699173,0.15675804,0.8056274,0.0051345536,0.0021502837,0.013661805],"study_design_scores_gemma":[0.000106490326,0.0010810152,0.015350209,0.00005060121,0.00019277482,0.00026882152,0.00022125384,0.52961093,0.4486671,0.0012740297,0.003101273,0.00007556093],"about_ca_topic_score_codex":0.002570076,"about_ca_topic_score_gemma":0.0029303185,"teacher_disagreement_score":0.002570076,"about_ca_system_score_codex":0.0007530862,"about_ca_system_score_gemma":0.0002819171,"threshold_uncertainty_score":0.005464077},"labels":[],"label_agreement":null},{"id":"W2810086026","doi":"10.1109/ted.2018.2847612","title":"Analysis of the Channel and Contact Regions in Staggered and Drain-Offset ZnO Thin-Film Transistors With Compact Modeling","year":2018,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":8,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Alberta","funders":"Science and Engineering Research Council; Alberta Innovates; CMC Microsystems","keywords":"Thin-film transistor; Materials science; Transistor; Optoelectronics; Offset (computer science); Electrode; Channel (broadcasting); Oxide thin-film transistor; Threshold voltage; Electrical engineering; Voltage; Layer (electronics); Nanotechnology; Computer science; Engineering; Chemistry","score_opus":0.011532535600820255,"score_gpt":0.21462102080347786,"score_spread":0.2030884852026576,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2810086026","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.8585671,0.0006165517,0.13691573,0.000052660424,0.000010887716,0.00004537483,0.00025965177,0.00033792903,0.0031941046],"genre_scores_gemma":[0.99155176,0.00018276616,0.0076739346,0.000005481764,0.000002288057,0.000021917293,0.000060011906,0.00001923175,0.00048259355],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99989474,0.000009895747,0.0000038392614,0.000031268763,0.00004378839,0.00001651716],"domain_scores_gemma":[0.9998467,0.00006789951,0.00003655419,0.000022165827,0.00002107678,0.0000055243386],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00013645831,0.00034196774,0.00030706375,0.00024738992,0.00015016022,0.0003196266,0.0006276213,0.0004069603,0.00036741106],"category_scores_gemma":[0.00046192898,0.00020241602,0.00040870297,0.00024587673,0.00031420004,0.0005872883,0.00014838402,0.0001772736,0.00008476068],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0001371385,0.00008096366,0.0032212571,0.00014631392,0.00005114258,0.0004400279,0.00018111209,0.5525847,0.42592037,0.0064066714,0.00018507721,0.0106452005],"study_design_scores_gemma":[0.0000052703635,0.000040284205,0.0010090506,0.0000029896094,0.000014802795,0.000048040612,0.000013814404,0.9737839,0.024384033,0.00045631555,0.00023700672,0.00000447499],"about_ca_topic_score_codex":0.0038790042,"about_ca_topic_score_gemma":0.0038938888,"teacher_disagreement_score":0.0038790042,"about_ca_system_score_codex":0.0008346794,"about_ca_system_score_gemma":0.0003183921,"threshold_uncertainty_score":0.007712841},"labels":[],"label_agreement":null},{"id":"W2810549339","doi":"10.1109/ted.2018.2846219","title":"Modeling the Reverse Gate-Leakage Current in GaN-Channel HFETs: Realistic Assessment of Fowler–Nordheim and Leakage at Mesa Sidewalls","year":2018,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":7,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Concordia University","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Leakage (economics); Quantum tunnelling; Materials science; Optoelectronics; Transistor; Schottky barrier; Heterojunction; Electron; Electric field; Condensed matter physics; Electrical engineering; Voltage; Physics; Engineering","score_opus":0.02342149095536132,"score_gpt":0.30006163033151295,"score_spread":0.2766401393761516,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2810549339","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.72442794,0.0011727529,0.25590512,0.00041065353,0.00006280926,0.00011090528,0.000572954,0.00020012012,0.017136833],"genre_scores_gemma":[0.9897933,0.00033082016,0.0070172856,0.00003993531,0.000017399287,0.00005231231,0.00007516503,0.000024141964,0.0026497445],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9999136,0.000021562368,0.0000035276355,0.00001362783,0.000023190056,0.00002440579],"domain_scores_gemma":[0.9998946,0.00005077885,0.000015758616,0.000012789253,0.000018783698,0.000007220713],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00026070743,0.00041308923,0.00042048865,0.00027237684,0.00021714902,0.00042402762,0.0010093951,0.001235878,0.0005074585],"category_scores_gemma":[0.00044840618,0.00023036919,0.00064863375,0.000250213,0.00031744523,0.0007026048,0.0002129038,0.00033403872,0.000148193],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000040134324,0.000025526018,0.00082244416,0.00004673943,0.000023238956,0.00018408868,0.00004060068,0.9806144,0.011242322,0.0049646776,0.000107244334,0.0018886745],"study_design_scores_gemma":[0.0000029555795,0.00001742955,0.00019182226,0.0000035172027,0.000005835356,0.000027011276,0.0000069122325,0.9980579,0.00096318615,0.00057703163,0.00014231112,0.0000040837554],"about_ca_topic_score_codex":0.0069646263,"about_ca_topic_score_gemma":0.0049729245,"teacher_disagreement_score":0.0069646263,"about_ca_system_score_codex":0.0008364107,"about_ca_system_score_gemma":0.00049574126,"threshold_uncertainty_score":0.013848186},"labels":[],"label_agreement":null},{"id":"W2831289900","doi":"10.1109/ted.2018.2849706","title":"Wireless &lt;italic&gt;LC&lt;/italic&gt;-Type Passive Humidity Sensor Using Large-Area RF Magnetron Sputtered ZnO Films","year":2018,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Gas Sensing Nanomaterials and Sensors","field":"Engineering","cited_by":19,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Natural Sciences and Engineering Research Council of Canada; University of Waterloo","keywords":"Materials science; Optoelectronics; Humidity; Capacitor; Calibration; Electromagnetic coil; Relative humidity; Electrical engineering; Fabrication; Resonator; Voltage; Physics; Engineering","score_opus":0.015420514419940598,"score_gpt":0.23114364975917376,"score_spread":0.21572313533923315,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2831289900","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.6801114,0.00539815,0.29475802,0.00066687306,0.00053967035,0.00024040698,0.0020584888,0.0032589922,0.012967926],"genre_scores_gemma":[0.86695033,0.002714947,0.117189564,0.0002699737,0.00013059321,0.000069091875,0.0007663208,0.00014680218,0.0117622595],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998585,0.000010163686,0.000006704487,0.00005918752,0.00005382577,0.000011633803],"domain_scores_gemma":[0.9998921,0.000017669972,0.000038235707,0.000011895267,0.000031212134,0.000008836171],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00012529915,0.00039625113,0.00019750847,0.00011039263,0.00007691487,0.00023383176,0.0004903645,0.0002297425,0.0011291772],"category_scores_gemma":[0.00021657297,0.00012818298,0.0001214748,0.0001951221,0.00016587184,0.00047182315,0.00018833196,0.00022094043,0.00071017136],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000029197186,0.000011735173,0.00030652113,0.00007170766,0.000003990468,0.000070353446,0.00000912393,0.00016646791,0.99138993,0.000077465804,0.00030199613,0.0075615337],"study_design_scores_gemma":[0.000011486446,0.00012751551,0.0019036619,0.000005188612,0.000019321249,0.0002707049,0.000016189822,0.0030511676,0.9905787,0.000035136996,0.003973214,0.000007615485],"about_ca_topic_score_codex":0.00087928155,"about_ca_topic_score_gemma":0.0016968577,"teacher_disagreement_score":0.0011291772,"about_ca_system_score_codex":0.00022801831,"about_ca_system_score_gemma":0.00009770245,"threshold_uncertainty_score":0.003777504},"labels":[],"label_agreement":null},{"id":"W2890220309","doi":"10.1109/ted.2018.2866598","title":"ZnO Schottky Nanodiodes Processed From Plasma-Enhanced Atomic Layer Deposition at Near Room Temperature","year":2018,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"ZnO doping and properties","field":"Materials Science","cited_by":4,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Alberta","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Schottky diode; Ohmic contact; Schottky barrier; Materials science; Diode; Analytical Chemistry (journal); Atomic layer deposition; Metal–semiconductor junction; Optoelectronics; Breakdown voltage; Electrode; Layer (electronics); Nanotechnology; Chemistry; Electrical engineering; Voltage; Physical chemistry; Organic chemistry","score_opus":0.011570550089029507,"score_gpt":0.23763820854541948,"score_spread":0.22606765845638996,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2890220309","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.8421308,0.003910464,0.14363348,0.00019078056,0.00030334576,0.0001683146,0.0016445215,0.0006305219,0.007387657],"genre_scores_gemma":[0.8459814,0.0023308645,0.14419125,0.00007890513,0.000026050613,0.000104720886,0.0012062414,0.00013303391,0.005947512],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99994063,0.0000015268208,0.0000030194606,0.000019840942,0.000028582703,0.000006350019],"domain_scores_gemma":[0.9999485,0.000012074563,0.000013871479,0.0000072284465,0.000013012879,0.00000537561],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000050734576,0.00021364052,0.00015838214,0.00011526715,0.00013083391,0.00018286688,0.00029382014,0.00014496353,0.0008009807],"category_scores_gemma":[0.00011697276,0.00015380507,0.00014811275,0.00012429184,0.000105615116,0.00021519221,0.00010985268,0.00030496198,0.00040515335],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0000053442163,0.0000018306891,0.0000719299,0.000022293534,0.0000012318325,0.000018755643,0.000006708073,0.000054645712,0.9983918,0.000078401135,0.000035511806,0.0013115165],"study_design_scores_gemma":[0.000005710076,0.000049576447,0.0024506338,0.0000032740777,0.000007381837,0.0001823799,0.000011464637,0.0008187404,0.9926082,0.00010965647,0.0037484667,0.000004656568],"about_ca_topic_score_codex":0.000730941,"about_ca_topic_score_gemma":0.0020672018,"teacher_disagreement_score":0.0008009807,"about_ca_system_score_codex":0.00025499548,"about_ca_system_score_gemma":0.00012142153,"threshold_uncertainty_score":0.0026795268},"labels":[],"label_agreement":null},{"id":"W2890419265","doi":"10.1109/ted.2018.2869024","title":"Theoretical Evaluation of the Effects of Isolation-Feature Size and Geometry on the Built-In Strain and 2-D Electron Gas Density of AlGaN/GaN Heterostructures","year":2018,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":7,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Concordia University","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Materials science; Heterojunction; Wurtzite crystal structure; Energy minimization; Optoelectronics; Gallium nitride; Transistor; Voltage; Nanotechnology; Electrical engineering; Chemistry; Engineering; Computational chemistry","score_opus":0.0063150772035207164,"score_gpt":0.2560989607197381,"score_spread":0.2497838835162174,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2890419265","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.8215972,0.00063764973,0.10470798,0.0009584291,0.00005632942,0.00013525682,0.0011490165,0.00042367599,0.07033438],"genre_scores_gemma":[0.9874049,0.00021212298,0.0095850155,0.00009376014,0.000018717848,0.00016153402,0.0002109175,0.00009650697,0.0022165182],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99982697,0.00006549424,0.0000048419865,0.000013481542,0.000052000192,0.000037203143],"domain_scores_gemma":[0.99903893,0.0007109799,0.000059348902,0.00004423975,0.000105683575,0.00004096013],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00060346693,0.0006146872,0.0006149345,0.000603048,0.00061255635,0.00060885795,0.00087852776,0.0012276979,0.0031459762],"category_scores_gemma":[0.0020132996,0.00042052148,0.0006656014,0.00042133508,0.00083557307,0.00043427185,0.000447495,0.00044465114,0.00024178589],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000018788016,0.000016272981,0.0005824354,0.00003909236,0.000008590664,0.000058597067,0.000020363548,0.99112517,0.0011799869,0.0061170724,0.0001290643,0.00070453784],"study_design_scores_gemma":[0.000005081104,0.00000771119,0.00017327582,0.0000037631223,0.0000021236594,0.0000075672283,0.000008248705,0.9987016,0.00026227222,0.00075419265,0.00007158652,0.0000026424202],"about_ca_topic_score_codex":0.006990705,"about_ca_topic_score_gemma":0.005949715,"teacher_disagreement_score":0.006990705,"about_ca_system_score_codex":0.0010235285,"about_ca_system_score_gemma":0.00084767764,"threshold_uncertainty_score":0.013900042},"labels":[],"label_agreement":null},{"id":"W2892463365","doi":"10.1109/ted.2018.2867909","title":"Guest Editorial Special Issue on 2-D Materials for Electronic, Optoelectronic, and Sensor Devices","year":2018,"lang":"en","type":"editorial","venue":"IEEE Transactions on Electron Devices","topic":"Semiconductor materials and devices","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Miniaturization; CMOS; Silicon; Electronics; Transistor; Moore's law; Engineering physics; Semiconductor; Nanotechnology; Electrical engineering; Semiconductor device; Scaling; Materials science; Engineering; Optoelectronics; Computer science","score_opus":0.005890776025535866,"score_gpt":0.24357966286962301,"score_spread":0.23768888684408715,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2892463365","genre_codex":"editorial","genre_gemma":"editorial","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"editorial","genre_consensus":"editorial","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.000057485315,0.004181057,0.00016400892,0.009700883,0.982373,0.000018613939,0.000049981558,0.0000707549,0.0033842365],"genre_scores_gemma":[0.0006251744,0.0058331457,0.00014092975,0.006554384,0.9629329,0.000019334066,0.00006456118,0.000063226595,0.023766475],"study_design_codex":"not_applicable","study_design_gemma":"not_applicable","domain_scores_codex":[0.99731123,0.00024146543,0.00024875574,0.00035340688,0.0015838733,0.00026141177],"domain_scores_gemma":[0.99367803,0.0014461237,0.0004873435,0.00020401704,0.0028626276,0.0013218761],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0029182755,0.0030626042,0.0021250127,0.0023384998,0.0022204733,0.006165426,0.0023661768,0.00711349,0.035168573],"category_scores_gemma":[0.007342274,0.00081309496,0.001765483,0.0008504648,0.0012142307,0.0039635575,0.0011728934,0.010049114,0.025061414],"study_design_candidate":"not_applicable","study_design_consensus":"not_applicable","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000050246475,0.000026314707,0.00002846707,0.00024249197,0.000011650318,0.00013880631,0.0000097535885,0.00003887234,0.0002862102,0.00061018486,0.99067396,0.007882906],"study_design_scores_gemma":[0.000030923573,0.000027672595,0.00013040374,0.00012425637,0.000016016538,0.00021439684,0.000016001439,0.00011203543,0.00025594395,0.00068633386,0.99837685,0.000009209479],"about_ca_topic_score_codex":0.0003832936,"about_ca_topic_score_gemma":0.001362677,"teacher_disagreement_score":0.035168573,"about_ca_system_score_codex":0.001651721,"about_ca_system_score_gemma":0.0014373364,"threshold_uncertainty_score":0.11765057},"labels":[],"label_agreement":null},{"id":"W2921123423","doi":"10.1109/ted.2005.852545","title":"Characterization of an Amorphous&lt;tex&gt;$hbox Ge_xhbox Si_1-xhbox O_y$&lt;/tex&gt;Microbolometer for Thermal Imaging Applications","year":2005,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Thermal Radiation and Cooling Technologies","field":"Engineering","cited_by":19,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Carleton University","funders":"","keywords":"Microbolometer; Materials science; Responsivity; Bolometer; Optoelectronics; Bulk micromachining; Resistor; Fabrication; Surface micromachining; Nichrome; Thermal conductivity; CMOS; Silicon; Analytical Chemistry (journal); Electrical engineering; Optics; Detector; Physics; Chemistry; Photodetector","score_opus":0.005670267212204196,"score_gpt":0.21460574541907282,"score_spread":0.2089354782068686,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2921123423","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9673276,0.0005507643,0.027761053,0.00015235128,0.00006953856,0.00012825862,0.00085146533,0.00039428112,0.002764608],"genre_scores_gemma":[0.95749784,0.00032029196,0.035848938,0.00012421084,0.000032082007,0.00013312593,0.0005532726,0.000073267074,0.005417038],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998957,0.000008784294,0.000004359952,0.000028106631,0.000047414134,0.000015521067],"domain_scores_gemma":[0.9995912,0.0001492298,0.000058944042,0.000051924657,0.00011025342,0.00003851518],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00020786644,0.00023509344,0.00019925703,0.0002314718,0.00022226691,0.0003066685,0.00043983076,0.00027364833,0.0014959223],"category_scores_gemma":[0.00046706843,0.00009292423,0.000112338064,0.00013173751,0.00020721383,0.0001839634,0.00010273419,0.0002111591,0.00047700785],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0000148940235,0.000007491742,0.0002471325,0.000021231088,0.0000015671051,0.000032996002,0.000021296528,0.000027122855,0.9982326,0.00008732441,0.00010858126,0.0011977983],"study_design_scores_gemma":[0.0000104279225,0.00028944155,0.006885331,0.0000068745994,0.000012329128,0.00019365769,0.000034411307,0.001786246,0.9857432,0.000031056494,0.005000107,0.0000067901938],"about_ca_topic_score_codex":0.00078301074,"about_ca_topic_score_gemma":0.00123068,"teacher_disagreement_score":0.0014959223,"about_ca_system_score_codex":0.0002583104,"about_ca_system_score_gemma":0.00023139677,"threshold_uncertainty_score":0.005004406},"labels":[],"label_agreement":null},{"id":"W2921945649","doi":"10.1109/ted.2019.2900743","title":"A New Expression for the Gain-Noise Relation of Single-Carrier Avalanche Photodiodes With Arbitrary Staircase Multiplication Regions","year":2019,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Semiconductor Quantum Structures and Devices","field":"Physics and Astronomy","cited_by":6,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Saskatchewan","funders":"Ministero dell’Istruzione, dell’Università e della Ricerca","keywords":"Avalanche photodiode; Impact ionization; Multiplication (music); Ionization; Noise (video); APDS; Physics; Classification of discontinuities; Avalanche diode; Avalanche breakdown; Single-photon avalanche diode; Multiple exciton generation; Noise figure; Computational physics; Optics; Optoelectronics; Computer science; Mathematics; Voltage; CMOS; Quantum mechanics; Breakdown voltage; Band gap; Mathematical analysis; Detector","score_opus":0.014876462040814307,"score_gpt":0.24428224980476915,"score_spread":0.22940578776395484,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2921945649","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.029105846,0.0009181552,0.9625044,0.00009425357,0.00008077041,0.00004396645,0.00008090471,0.00036696813,0.006804737],"genre_scores_gemma":[0.6711589,0.0018912813,0.31232336,0.0002324996,0.00014636964,0.00016970337,0.00016470865,0.00028537266,0.013627839],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99977416,0.000021512004,0.000015313411,0.000045487002,0.00012254149,0.000021020373],"domain_scores_gemma":[0.99965966,0.000120100725,0.000041158044,0.000044016255,0.000120828285,0.000014292249],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0003583777,0.0006676526,0.00031350166,0.00072129915,0.00019856439,0.00064989016,0.0010030776,0.00056545215,0.0018831141],"category_scores_gemma":[0.0013177402,0.0002479505,0.00042922175,0.00046689593,0.00046175506,0.0012578233,0.00048770115,0.0006417258,0.00060039904],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00014063834,0.00010026336,0.0020360863,0.0005840376,0.00010579595,0.00088072906,0.00025995934,0.20765585,0.37902334,0.2996912,0.0019055436,0.10761663],"study_design_scores_gemma":[0.000019269528,0.00009254411,0.0013830183,0.00003450001,0.000061307444,0.000761506,0.000027169233,0.88853383,0.041330628,0.05744506,0.010262533,0.00004868795],"about_ca_topic_score_codex":0.0006300479,"about_ca_topic_score_gemma":0.0010699211,"teacher_disagreement_score":0.0018831141,"about_ca_system_score_codex":0.0007623073,"about_ca_system_score_gemma":0.00028323047,"threshold_uncertainty_score":0.0062996745},"labels":[],"label_agreement":null},{"id":"W2927608644","doi":"10.1109/ted.2019.2906943","title":"Scalable Modeling of Transient Self-Heating of GaN High-Electron-Mobility Transistors Based on Experimental Measurements","year":2019,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":18,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Institut interdisciplinaire d'innovation technologique; Université de Sherbrooke","funders":"Natural Sciences and Engineering Research Council of Canada; Centre National de la Recherche Scientifique; Fonds Québécois de la Recherche sur la Nature et les Technologies","keywords":"High-electron-mobility transistor; Transient (computer programming); Materials science; Transistor; Optoelectronics; Thermal resistance; Thermal; Scalability; Electrical impedance; Electronic engineering; Electrical engineering; Computer science; Engineering; Physics","score_opus":0.01707664298044693,"score_gpt":0.25069371637021565,"score_spread":0.23361707338976873,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2927608644","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.23330633,0.000667158,0.7455748,0.00021662343,0.0000761753,0.0002582045,0.0012037315,0.0029654538,0.015731527],"genre_scores_gemma":[0.97316235,0.0003688369,0.023929106,0.000026779859,0.000015861366,0.00018875461,0.00026915647,0.00010469959,0.001934385],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9998332,0.000016693883,0.0000062930267,0.000045145196,0.0000776261,0.000020973735],"domain_scores_gemma":[0.9998534,0.00005212003,0.00001946948,0.00004150729,0.00002670921,0.000006817635],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0002509572,0.00080240966,0.00041809405,0.00021711258,0.00018773798,0.0003606227,0.00095206837,0.0006299167,0.0014329855],"category_scores_gemma":[0.0005812473,0.00030492534,0.0006729926,0.0002178805,0.00032247155,0.0010127549,0.000266145,0.0006108042,0.0004907177],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000088464665,0.000107472275,0.001405667,0.00024439648,0.000047725385,0.0002945885,0.00015367525,0.68805754,0.28695884,0.0065339184,0.000777993,0.015329671],"study_design_scores_gemma":[0.0000031656032,0.000027809969,0.00044350597,0.0000050943922,0.0000045322995,0.000027979908,0.0000076245474,0.97641796,0.02190239,0.0005972495,0.0005562903,0.000006391616],"about_ca_topic_score_codex":0.0020203125,"about_ca_topic_score_gemma":0.0015671917,"teacher_disagreement_score":0.0020203125,"about_ca_system_score_codex":0.0007747093,"about_ca_system_score_gemma":0.00044227118,"threshold_uncertainty_score":0.0056209564},"labels":[],"label_agreement":null},{"id":"W2946201067","doi":"10.1109/ted.2019.2915084","title":"Modeling of Hysteretic Jump Points in Ferroelectric MOS Capacitors","year":2019,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Ferroelectric and Negative Capacitance Devices","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Canada First Research Excellence Fund","keywords":"Hysteresis; Capacitor; Capacitance; Materials science; Energy (signal processing); Ferroelectricity; Condensed matter physics; Topology (electrical circuits); Optoelectronics; Voltage; Electrical engineering; Mathematics; Electronic engineering; Physics; Quantum mechanics; Engineering","score_opus":0.008999651337001716,"score_gpt":0.20988625013782672,"score_spread":0.200886598800825,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2946201067","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.71970993,0.0013041169,0.24251164,0.0007233506,0.00009406607,0.00017461141,0.00086592673,0.0005435287,0.034072794],"genre_scores_gemma":[0.98823327,0.00034483842,0.007628562,0.00004618434,0.000013737481,0.000103495346,0.00011099142,0.000048541624,0.0034703563],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99992895,0.000012003602,0.0000038513845,0.000012208408,0.000023332499,0.00001968537],"domain_scores_gemma":[0.9998629,0.00006383773,0.000021481643,0.000011971212,0.000026484277,0.000013405076],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00015603426,0.00040328794,0.00037530833,0.00039034238,0.00035758136,0.0005274216,0.0011808336,0.0013236961,0.0021429516],"category_scores_gemma":[0.00048330583,0.00025658167,0.00047561078,0.00037581119,0.0005083232,0.0006375478,0.00031586937,0.00047168866,0.00019201501],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00003111933,0.00003594566,0.00070557493,0.000053122523,0.000016082704,0.0002314259,0.00006143069,0.97357565,0.01502215,0.00816188,0.00028935028,0.0018162463],"study_design_scores_gemma":[0.0000021727326,0.0000053715726,0.00008915321,0.000002055827,0.0000015456752,0.000009111569,0.0000047875874,0.9984421,0.0006426185,0.00067987636,0.000118311844,0.00000286929],"about_ca_topic_score_codex":0.006423454,"about_ca_topic_score_gemma":0.0035388141,"teacher_disagreement_score":0.006423454,"about_ca_system_score_codex":0.0007681403,"about_ca_system_score_gemma":0.00055140676,"threshold_uncertainty_score":0.012772083},"labels":[],"label_agreement":null},{"id":"W2958562926","doi":"10.1109/ted.2019.2924170","title":"Modeling of Ballistic Monolayer Black Phosphorus MOSFETs","year":2019,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"2D Materials and Applications","field":"Materials Science","cited_by":10,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McGill University","funders":"Compute Canada; Natural Sciences and Engineering Research Council of Canada; McGill University","keywords":"Drain-induced barrier lowering; MOSFET; Materials science; Optoelectronics; Ballistic conduction; Transistor; Monolayer; Field-effect transistor; Capacitor; Voltage; Condensed matter physics; Electrical engineering; Nanotechnology; Physics; Engineering; Electron","score_opus":0.01227103010403955,"score_gpt":0.24706846765616816,"score_spread":0.23479743755212862,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2958562926","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.45690084,0.0011146487,0.51836634,0.00050693285,0.00010633182,0.00012531364,0.0010509838,0.0008260836,0.02100252],"genre_scores_gemma":[0.9565856,0.0006447017,0.036498822,0.0000796425,0.000025104207,0.0001480323,0.0002360857,0.00008199559,0.005700137],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99989307,0.000019561714,0.0000045226043,0.00001979955,0.00004333731,0.000019615496],"domain_scores_gemma":[0.99991536,0.000032609692,0.000013527631,0.00001241987,0.000018451079,0.000007631292],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00014011236,0.0004530652,0.00058228197,0.00029200662,0.00030237233,0.0005169735,0.0012543662,0.0009033956,0.0013121039],"category_scores_gemma":[0.0003354462,0.0002813755,0.00047758108,0.00024862637,0.0003591615,0.0009250138,0.00031451051,0.00036557156,0.00030831102],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000056657107,0.000024622474,0.0005706524,0.000092513525,0.00003083277,0.0003135607,0.000110970286,0.9403353,0.031943362,0.022129664,0.00041431602,0.003977495],"study_design_scores_gemma":[0.0000037870204,0.0000145709355,0.00010868379,0.0000023316077,0.0000046316122,0.000037185877,0.0000077667055,0.99569076,0.0013843708,0.0021645057,0.0005768518,0.000004531783],"about_ca_topic_score_codex":0.0041868933,"about_ca_topic_score_gemma":0.0025966824,"teacher_disagreement_score":0.0041868933,"about_ca_system_score_codex":0.00058659626,"about_ca_system_score_gemma":0.00063780096,"threshold_uncertainty_score":0.00832504},"labels":[],"label_agreement":null},{"id":"W2963965558","doi":"10.1109/ted.2019.2926742","title":"Self-Heating and Equivalent Channel Temperature in Short Gate Length GaN HEMTs","year":2019,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":66,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Materials science; Optoelectronics; Transistor; Channel (broadcasting); Wide-bandgap semiconductor; Temperature measurement; Thermal; Field-effect transistor; Logic gate; Gallium nitride; Electronic engineering; Electrical engineering; Voltage; Engineering; Nanotechnology; Layer (electronics); Physics; Thermodynamics","score_opus":0.009235966070179995,"score_gpt":0.2424321410871513,"score_spread":0.23319617501697132,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2963965558","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9475058,0.00066035084,0.047933176,0.00009028375,0.00003164383,0.000014741847,0.000046747107,0.00011825028,0.0035990602],"genre_scores_gemma":[0.9982938,0.000105461135,0.0012144239,0.000008867807,0.000004618502,0.0000035815956,0.000009922734,0.0000120528575,0.00034730512],"study_design_codex":"simulation_or_modeling","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999269,0.000013460021,0.000002897559,0.0000129967,0.000029242992,0.000014603499],"domain_scores_gemma":[0.99982077,0.00009939557,0.000031490108,0.000016426871,0.000023003176,0.000008914678],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00017920832,0.00017131178,0.00019106679,0.00015593656,0.0001103396,0.00026915895,0.00027380258,0.00025353004,0.00045452427],"category_scores_gemma":[0.00050435495,0.0001159565,0.00020746353,0.0001191226,0.0004503261,0.0005900746,0.00017075699,0.00018729332,0.00007067747],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00012325254,0.0000704933,0.0055919765,0.00011967848,0.00004177211,0.0005302484,0.00019534954,0.69673103,0.27756223,0.011863241,0.00021636445,0.006954361],"study_design_scores_gemma":[0.0000066637886,0.0000681518,0.0027625037,0.000006115082,0.000009554206,0.00010002916,0.000025180723,0.95746636,0.03683139,0.002402814,0.00030922834,0.000012048175],"about_ca_topic_score_codex":0.00054592435,"about_ca_topic_score_gemma":0.0005627016,"teacher_disagreement_score":0.00054592435,"about_ca_system_score_codex":0.00031858217,"about_ca_system_score_gemma":0.00013059647,"threshold_uncertainty_score":0.0023115277},"labels":[],"label_agreement":null},{"id":"W2970794242","doi":"10.1109/ted.2019.2935690","title":"Characterization of SiPM Avalanche Triggering Probabilities","year":2019,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Radiation Detection and Scintillator Technologies","field":"Physics and Astronomy","cited_by":30,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo; TRIUMF; Queen's University; University of British Columbia","funders":"","keywords":"Silicon photomultiplier; Photon; Cherenkov radiation; Detector; Avalanche photodiode; Photodetector; Scintillation; Photonics","score_opus":0.006385154915900733,"score_gpt":0.21445671554691226,"score_spread":0.20807156063101154,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2970794242","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.93227875,0.0007049175,0.05678578,0.00015810285,0.000031758285,0.00012105738,0.0011665775,0.00071634335,0.008036706],"genre_scores_gemma":[0.99700266,0.000093075505,0.002243104,0.000011056305,0.0000053033154,0.000029566176,0.000248758,0.00002562075,0.0003408129],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9995498,0.00003403554,0.000028659433,0.00012806179,0.00019573106,0.00006356287],"domain_scores_gemma":[0.9973717,0.0015666102,0.000359691,0.00031501544,0.00031381214,0.00007326561],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0007993486,0.0004036893,0.00032066647,0.0009686365,0.00022357471,0.0005876068,0.000752003,0.0005352688,0.0019059469],"category_scores_gemma":[0.004070393,0.00022011157,0.00030074076,0.0007155273,0.00043224753,0.000993501,0.00036316866,0.0005109342,0.0002140465],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0007352432,0.00019971072,0.02899831,0.0004269301,0.000105819956,0.0007301744,0.00034546334,0.16251639,0.7386333,0.024056684,0.0011814348,0.04207057],"study_design_scores_gemma":[0.00002363269,0.00047284953,0.026579872,0.000039650564,0.00004845397,0.0007785279,0.00008334534,0.4869519,0.4769147,0.0041293893,0.003909888,0.00006783499],"about_ca_topic_score_codex":0.0003873598,"about_ca_topic_score_gemma":0.0003075108,"teacher_disagreement_score":0.0019059469,"about_ca_system_score_codex":0.00086597766,"about_ca_system_score_gemma":0.00026546026,"threshold_uncertainty_score":0.006376028},"labels":[],"label_agreement":null},{"id":"W2984054658","doi":"10.1109/ted.2019.2947565","title":"Suppression of Capillary Flow in Slot-Die Coating for the Fabrication of Fine OLED Stripe","year":2019,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Nanomaterials and Printing Technologies","field":"Engineering","cited_by":5,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McMaster University","funders":"National Research Foundation of Korea","keywords":"Fabrication; Die (integrated circuit); OLED; Capillary action; Materials science; Coating; Optoelectronics; Flow (mathematics); Layer (electronics); Physics; Composite material; Nanotechnology; Mechanics","score_opus":0.009066564635308031,"score_gpt":0.22449033663915358,"score_spread":0.21542377200384555,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2984054658","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9736631,0.00032969125,0.024369916,0.000043994456,0.000028407934,0.000022453074,0.00006617054,0.00017055818,0.0013057909],"genre_scores_gemma":[0.9833636,0.00016902722,0.01591173,0.000013954484,0.0000052435516,0.000015763297,0.000029242838,0.000012323411,0.00047893164],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999497,0.000003728744,0.000002467628,0.00001019607,0.000019537278,0.000014332516],"domain_scores_gemma":[0.9999274,0.000021884856,0.000020915344,0.000008888682,0.000012632955,0.000008380986],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00009324662,0.00019287743,0.00016892925,0.0000935878,0.000101903686,0.00016732472,0.00020153094,0.000201855,0.0004009578],"category_scores_gemma":[0.00014396949,0.00015211395,0.000141246,0.00008423716,0.00018798858,0.00017515186,0.00016408387,0.00018966732,0.000103428756],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000016729717,0.000009476399,0.00019203514,0.000040838433,0.0000023006182,0.00004358761,0.000017033346,0.00182361,0.9957021,0.00028296738,0.000048434624,0.0018209693],"study_design_scores_gemma":[0.000016764916,0.000097746604,0.0012206674,0.0000037597206,0.0000054384645,0.000046840283,0.000009979103,0.041706767,0.955727,0.00005750195,0.0010992414,0.000008270562],"about_ca_topic_score_codex":0.0006903066,"about_ca_topic_score_gemma":0.0012716831,"teacher_disagreement_score":0.0006903066,"about_ca_system_score_codex":0.00021765377,"about_ca_system_score_gemma":0.00021501459,"threshold_uncertainty_score":0.0015791655},"labels":[],"label_agreement":null},{"id":"W2998437992","doi":"10.1109/ted.2019.2956890","title":"CMOS-Like Logic Circuits With Unipolar Thin-Film Transistors on Flexible Substrate","year":2019,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":11,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"NAND gate; CMOS; Pass transistor logic; Logic gate; Electronic circuit; NAND logic; Electronic engineering; NMOS logic; AND-OR-Invert; Digital electronics; Logic level; NOR gate; Computer science; Transistor; Logic family; Electrical engineering; Engineering; Logic synthesis; Voltage","score_opus":0.010009416608432404,"score_gpt":0.20398385856496737,"score_spread":0.19397444195653496,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2998437992","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9596409,0.00063252146,0.034657937,0.000071828545,0.000063786756,0.000037340717,0.00012908452,0.00027639774,0.0044901413],"genre_scores_gemma":[0.98477465,0.00020968608,0.013920703,0.000022590335,0.000010832121,0.000008778162,0.000049436127,0.000012353693,0.0009908951],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999404,0.0000059491204,0.000004598369,0.000011717915,0.000026218278,0.000011067184],"domain_scores_gemma":[0.9998654,0.000040723207,0.00003107871,0.00002739628,0.000024837918,0.000010507622],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00007521599,0.0001993889,0.00014362739,0.00011927354,0.00013019759,0.0003253099,0.00040856624,0.00023319165,0.0009927195],"category_scores_gemma":[0.000279196,0.00010433305,0.00013834442,0.00014479816,0.00016530234,0.00035674084,0.00013694387,0.00016953454,0.0002624617],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000054712058,0.000013533418,0.00053078553,0.000077822275,0.000016106806,0.00036471488,0.000027608328,0.001868359,0.98793656,0.001196291,0.00012316743,0.0077903173],"study_design_scores_gemma":[0.000026808306,0.00049693213,0.0032580902,0.000016300535,0.00003831085,0.00074537686,0.00004752831,0.03256135,0.95832556,0.00067154097,0.0037928342,0.00001935384],"about_ca_topic_score_codex":0.00039725532,"about_ca_topic_score_gemma":0.0010266462,"teacher_disagreement_score":0.0009927195,"about_ca_system_score_codex":0.0001877815,"about_ca_system_score_gemma":0.00013601195,"threshold_uncertainty_score":0.003320992},"labels":[],"label_agreement":null},{"id":"W3000596657","doi":"10.1109/ted.2019.2958789","title":"Use of Pulse-Height Spectroscopy to Characterize the Hole Conduction Mechanism of a Polyimide Blocking Layer Used in Amorphous-Selenium Radiation Detectors","year":2020,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Advanced Semiconductor Detectors and Materials","field":"Engineering","cited_by":10,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Concordia University; University of Waterloo","funders":"Natural Sciences and Engineering Research Council of Canada; University of Waterloo","keywords":"Cadmium zinc telluride; Materials science; Optoelectronics; Detector; Electric field; Polyimide; Dark current; Particle detector; Spectroscopy; Photoconductivity; Amorphous solid; Photon; Optics; Layer (electronics); Photodetector; Physics; Chemistry; Nanotechnology","score_opus":0.03158439121458019,"score_gpt":0.2390655659224588,"score_spread":0.20748117470787864,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3000596657","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9787063,0.00015993838,0.020199312,0.000031163887,0.0000076152355,0.000020566804,0.000055334982,0.00007734579,0.0007424789],"genre_scores_gemma":[0.98340917,0.00013912295,0.01587973,0.00001163673,0.000002199548,0.000010457952,0.00003957131,0.000010148052,0.00049793965],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999112,0.000007740324,0.000003497739,0.000018497569,0.000045170767,0.000013970077],"domain_scores_gemma":[0.9997117,0.00014917096,0.000055955967,0.000025068959,0.00004258067,0.000015434525],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00024596794,0.00027477933,0.00013683096,0.00021439514,0.0001584604,0.0002581516,0.0003265998,0.00024899526,0.00047732668],"category_scores_gemma":[0.00041057137,0.0001554643,0.00012284584,0.00020726836,0.00028008784,0.00031501948,0.00016629277,0.00034642118,0.0000961908],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000031639516,0.000014122471,0.00072964147,0.000015582229,0.0000027131414,0.000028294644,0.00002449211,0.0004130213,0.9968098,0.00013340362,0.000007648079,0.0017896064],"study_design_scores_gemma":[0.0000021083845,0.00005310757,0.0011080399,0.0000013208827,0.0000028387572,0.000022839191,0.000012346449,0.0045786267,0.99408495,0.00002812952,0.00010358092,0.0000020891],"about_ca_topic_score_codex":0.00083204894,"about_ca_topic_score_gemma":0.0013019876,"teacher_disagreement_score":0.00083204894,"about_ca_system_score_codex":0.00030126708,"about_ca_system_score_gemma":0.00023071957,"threshold_uncertainty_score":0.0021858811},"labels":[],"label_agreement":null},{"id":"W3016116764","doi":"10.1109/ted.2020.2980329","title":"A Parametric Technique for Trap Characterization in AlGaN/GaN HEMTs","year":2020,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":20,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Institut interdisciplinaire d'innovation technologique; Université de Sherbrooke","funders":"Liverpool John Moores University","keywords":"Trapping; Charge (physics); Time constant; Materials science; Transistor; Degradation (telecommunications); Optoelectronics; Analytical Chemistry (journal); Atomic physics; Physics; Chemistry; Electrical engineering; Voltage; Quantum mechanics; Biology","score_opus":0.018536682748734042,"score_gpt":0.2586343268983408,"score_spread":0.24009764414960677,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3016116764","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.62448335,0.0015959296,0.3658638,0.00020768875,0.000070548,0.00015577243,0.00060936704,0.0012743826,0.0057391403],"genre_scores_gemma":[0.932109,0.00042698663,0.06515508,0.000044473916,0.000019938278,0.00014359038,0.00010578346,0.00004932833,0.0019458235],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998299,0.000020884705,0.0000070914057,0.00004668488,0.0000725532,0.00002294841],"domain_scores_gemma":[0.9997012,0.000095496805,0.00005776629,0.00007340809,0.000059210444,0.000012790706],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00020214177,0.00027616447,0.00020777728,0.00034511302,0.00024014368,0.00035829554,0.0004951537,0.0003337118,0.00084252027],"category_scores_gemma":[0.00043657588,0.00018037904,0.00018739156,0.00033087275,0.00029520213,0.000438037,0.00038506088,0.00044609164,0.00020842075],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000030376365,0.000012063587,0.0005819484,0.00004024875,0.000008156368,0.00007757246,0.00009004024,0.0010923386,0.98026776,0.0006924745,0.00011237386,0.016994677],"study_design_scores_gemma":[0.0000115548,0.00019056087,0.0052557844,0.000011316763,0.000020676185,0.00067507173,0.00008698484,0.027750386,0.9617783,0.0006879302,0.0035035524,0.0000279911],"about_ca_topic_score_codex":0.0005061776,"about_ca_topic_score_gemma":0.0006051458,"teacher_disagreement_score":0.00084252027,"about_ca_system_score_codex":0.0003069332,"about_ca_system_score_gemma":0.00024118151,"threshold_uncertainty_score":0.0028184652},"labels":[],"label_agreement":null},{"id":"W3021742783","doi":"10.1109/ted.2020.2988857","title":"Deep Gate Field Penetration Au:ZrO<sup>2</sup> Metal–Insulator Tunneling Transistor","year":2020,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Semiconductor materials and devices","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Alberta","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Quantum tunnelling; Transistor; Field-effect transistor; CMOS; Planar; Optoelectronics; Electrical engineering; Metal gate; Gate oxide; Materials science; Analytical Chemistry (journal); Physics; Chemistry; Computer science; Voltage; Engineering","score_opus":0.014263295243287013,"score_gpt":0.2160013881542181,"score_spread":0.2017380929109311,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3021742783","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.96897674,0.0012521772,0.0229239,0.00012709461,0.000065750326,0.000028898172,0.00020404771,0.00038661194,0.0060347263],"genre_scores_gemma":[0.99174833,0.00026607994,0.006668033,0.000036102363,0.000012743488,0.000009217484,0.00007186114,0.000008728103,0.0011787734],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99990404,0.000008135501,0.000005050079,0.000022067898,0.00003572578,0.000024959458],"domain_scores_gemma":[0.99990606,0.000011956006,0.00003746048,0.000016140231,0.000015459185,0.000012920143],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000098105294,0.00030403677,0.00029244792,0.00012223588,0.00010048118,0.00044885144,0.00060830376,0.00042626148,0.0006140261],"category_scores_gemma":[0.00012752622,0.00009731843,0.00021392059,0.00018205267,0.0002138753,0.0005037162,0.00020462296,0.00018175227,0.00023481903],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000072495146,0.00001973574,0.00041540377,0.000064156615,0.00001459716,0.00018905962,0.000025599642,0.00056141074,0.991659,0.0017460188,0.00019376964,0.0050388356],"study_design_scores_gemma":[0.000044470184,0.0009854457,0.0038977012,0.000008505254,0.000059072518,0.0013605085,0.000068181915,0.01980754,0.9628922,0.0005695734,0.01027362,0.00003323245],"about_ca_topic_score_codex":0.00026658917,"about_ca_topic_score_gemma":0.0004960955,"teacher_disagreement_score":0.0006140261,"about_ca_system_score_codex":0.0002494096,"about_ca_system_score_gemma":0.00009102954,"threshold_uncertainty_score":0.0020540953},"labels":[],"label_agreement":null},{"id":"W3022201269","doi":"10.1109/ted.2020.2985023","title":"Assessing the Role of a Semiconductor’s Anisotropic Permittivity in Hafnium Disulfide Monolayer Field-Effect Transistors","year":2020,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Semiconductor materials and devices","field":"Engineering","cited_by":9,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Permittivity; Materials science; Relative permittivity; Capacitance; Semiconductor; Isotropy; Field-effect transistor; Anisotropy; Transistor; Condensed matter physics; Optoelectronics; Dielectric; Electrical engineering; Optics; Physics; Engineering; Voltage","score_opus":0.011939423219267485,"score_gpt":0.24851647748791508,"score_spread":0.23657705426864759,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3022201269","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99576485,0.00023095391,0.0029107602,0.000051093684,0.000008236128,0.0000046244973,0.000031398453,0.000029539413,0.00096847746],"genre_scores_gemma":[0.9983752,0.00017553337,0.0012920845,0.000008036505,0.0000018797116,0.000003931331,0.000018852563,0.0000053637696,0.000119063494],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998952,0.000021608228,0.0000059130534,0.000015263578,0.000043640583,0.000018258374],"domain_scores_gemma":[0.9996722,0.00021198567,0.000043090095,0.000021070326,0.000036262732,0.000015405536],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0002920673,0.00029364735,0.00019352367,0.0001861963,0.00023779825,0.00033889382,0.00020827196,0.000331909,0.00024167963],"category_scores_gemma":[0.0008680927,0.00016797037,0.00014821462,0.0002780986,0.00027338887,0.0006842245,0.00021119998,0.0002172826,0.00006628782],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00050119864,0.00026527798,0.018861316,0.00021761756,0.00005926868,0.00071795,0.0002893467,0.29097036,0.6707414,0.0034609712,0.00032553167,0.013589943],"study_design_scores_gemma":[0.000030511777,0.00072703284,0.012044279,0.000021075493,0.000054160246,0.00021229299,0.00021048752,0.6054322,0.3790481,0.0010194554,0.0011587803,0.000041655167],"about_ca_topic_score_codex":0.0013157292,"about_ca_topic_score_gemma":0.0014014142,"teacher_disagreement_score":0.0013157292,"about_ca_system_score_codex":0.0003080316,"about_ca_system_score_gemma":0.00016609073,"threshold_uncertainty_score":0.0026161075},"labels":[],"label_agreement":null},{"id":"W3023484550","doi":"10.1109/ted.2020.2988855","title":"Design and Simulation of Steep-Slope Silicon Cold Source FETs With Effective Carrier Distribution Model","year":2020,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":27,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McGill University","funders":"Fonds de recherche du Québec – Nature et technologies; Higher Education Discipline Innovation Project; Natural Sciences and Engineering Research Council of Canada; National Natural Science Foundation of China","keywords":"MOSFET; Quantum tunnelling; Field-effect transistor; Transistor; Silicon; Non-equilibrium thermodynamics; Thermalisation; Materials science; Optoelectronics; Physics; Topology (electrical circuits); Electrical engineering; Engineering; Thermodynamics; Voltage","score_opus":0.013843355873824752,"score_gpt":0.22933456842365907,"score_spread":0.2154912125498343,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3023484550","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.5794111,0.0008592847,0.37646794,0.00075634365,0.00012029937,0.00030201324,0.0018180626,0.0017829167,0.038482025],"genre_scores_gemma":[0.9572391,0.00024621224,0.037873995,0.00007374092,0.000011614397,0.00026663177,0.00033004137,0.0000828035,0.0038758586],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99989104,0.000022115391,0.0000047050207,0.000017376557,0.000041227013,0.000023539536],"domain_scores_gemma":[0.99978226,0.00009839365,0.000027356147,0.000019052408,0.000055341257,0.000017635375],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00021902526,0.00046468122,0.0006712894,0.00031231612,0.00031905543,0.0005802637,0.0012266033,0.0010193897,0.0027252196],"category_scores_gemma":[0.0005601267,0.00030137395,0.0005087667,0.00035804935,0.00033431206,0.00044515368,0.0002617707,0.0003814619,0.00031621824],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00003322746,0.000021187074,0.00041157164,0.000040250274,0.000014583024,0.00006706163,0.000023661283,0.99145186,0.0040139663,0.0019317672,0.00025994706,0.0017309019],"study_design_scores_gemma":[0.000005647949,0.000012047727,0.000048199134,0.0000015632149,0.0000023693988,0.0000034668876,0.0000030042406,0.9990096,0.0005458934,0.00018597537,0.00018056459,0.000001623779],"about_ca_topic_score_codex":0.007473804,"about_ca_topic_score_gemma":0.0060486686,"teacher_disagreement_score":0.007473804,"about_ca_system_score_codex":0.0009368512,"about_ca_system_score_gemma":0.0009906179,"threshold_uncertainty_score":0.01486057},"labels":[],"label_agreement":null},{"id":"W3037534544","doi":"10.1109/ted.2020.3001248","title":"RF Performance Projections of Negative-Capacitance FETs: <i>f<sub>T</sub> </i>, <i>f</i> <sub>max</sub>, and <i>g<sub>m</sub>f<sub>T</sub>/I<sub>D</sub> </i>","year":2020,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Ferroelectric and Negative Capacitance Devices","field":"Engineering","cited_by":17,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Alberta","funders":"Natural Sciences and Engineering Research Council of Canada; Alberta Innovates - Technology Futures","keywords":"Transconductance; Physics; Transistor; Quantum mechanics; Voltage","score_opus":0.01137208934840532,"score_gpt":0.19787684598256353,"score_spread":0.18650475663415822,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3037534544","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.92845124,0.00085041934,0.01997283,0.00082786434,0.00003409794,0.000034114135,0.0023713722,0.0009965268,0.046461597],"genre_scores_gemma":[0.99438465,0.00021722667,0.0023487445,0.00004877554,0.000015902338,0.000014030498,0.000727663,0.00005870243,0.0021842446],"study_design_codex":"bench_or_experimental","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9998826,0.000012012024,0.0000034521593,0.00003268216,0.00004399338,0.000025293526],"domain_scores_gemma":[0.999587,0.00017308873,0.00006597798,0.000030929303,0.00011438132,0.000028536731],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00030767734,0.00059006474,0.0001865099,0.0004537589,0.0001777797,0.00050470675,0.00040921077,0.0006365163,0.003297493],"category_scores_gemma":[0.00090816943,0.00009892815,0.00022375639,0.00038054332,0.00027116368,0.00068336364,0.00022591768,0.00029294132,0.0010674883],"study_design_candidate":"simulation_or_modeling","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0012853516,0.00018210031,0.016353447,0.00043033896,0.00010696472,0.00073593005,0.00041305917,0.11605946,0.78118235,0.01862801,0.0084286295,0.056194294],"study_design_scores_gemma":[0.00007417652,0.0013346103,0.05386845,0.00007146084,0.00018080928,0.0013816148,0.00033393875,0.45025572,0.47444108,0.008181388,0.009788693,0.00008803692],"about_ca_topic_score_codex":0.0018671261,"about_ca_topic_score_gemma":0.0020691552,"teacher_disagreement_score":0.003297493,"about_ca_system_score_codex":0.0006499069,"about_ca_system_score_gemma":0.00016623062,"threshold_uncertainty_score":0.01103127},"labels":[],"label_agreement":null},{"id":"W3038021281","doi":"10.1109/ted.2020.3002208","title":"Printed Logic Gates Based on Enhancement- and Depletion-Mode Electrolyte-Gated Transistors","year":2020,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Semiconductor materials and devices","field":"Engineering","cited_by":15,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Transistor; Logic gate; Electrical engineering; Pass transistor logic; Materials science; Optoelectronics; Electronic engineering; Inverter; Threshold voltage; Resistor; Current-mode logic; Voltage; Engineering","score_opus":0.012368666682199901,"score_gpt":0.2274772538385547,"score_spread":0.21510858715635478,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3038021281","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.8754421,0.0013503949,0.094788074,0.00021163897,0.00033213547,0.00005695419,0.00047558337,0.0018033009,0.025539655],"genre_scores_gemma":[0.9661958,0.0004226972,0.028572971,0.00008899424,0.000024331643,0.000023159299,0.000111608344,0.00005396013,0.0045064916],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99991274,0.0000053274352,0.000005742713,0.000026598744,0.000034866294,0.00001464252],"domain_scores_gemma":[0.9999064,0.000028953213,0.000025016328,0.000018845445,0.000013334078,0.0000074439245],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00004508598,0.00023129508,0.00013653706,0.00018735387,0.00009449947,0.00046338432,0.00051767146,0.00027879357,0.0013678409],"category_scores_gemma":[0.00023966469,0.00013283937,0.00016104995,0.00027061818,0.00020830831,0.00040815517,0.00021858817,0.0002374242,0.00041833322],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000052162024,0.000022295946,0.00020144256,0.0000700141,0.00001244278,0.0002449893,0.000023908337,0.0017832489,0.9766494,0.0017646723,0.0003372074,0.018838126],"study_design_scores_gemma":[0.000015543761,0.00012152066,0.00093425775,0.0000069083962,0.000018310013,0.0002890083,0.000009533686,0.008947998,0.9849777,0.00068576884,0.0039813947,0.000011989587],"about_ca_topic_score_codex":0.00011761038,"about_ca_topic_score_gemma":0.00036057545,"teacher_disagreement_score":0.0013678409,"about_ca_system_score_codex":0.00019797531,"about_ca_system_score_gemma":0.00006623702,"threshold_uncertainty_score":0.0045758486},"labels":[],"label_agreement":null},{"id":"W3039564044","doi":"10.1109/ted.2020.3003847","title":"Modeling Bias Dependence of Self-Heating in GaN HEMTs Using Two Heat Sources","year":2020,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":27,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"High-electron-mobility transistor; Gallium nitride; Materials science; Transistor; Heat sink; Optoelectronics; Heat generation; Wide-bandgap semiconductor; Thermal; Mechanics; Computational physics; Physics; Thermodynamics; Electrical engineering; Nanotechnology; Engineering","score_opus":0.03863925681996503,"score_gpt":0.27854716089219494,"score_spread":0.23990790407222992,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3039564044","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.51690257,0.00093884487,0.46202448,0.00028318638,0.00010572974,0.0001068535,0.00022692363,0.00063503673,0.018776441],"genre_scores_gemma":[0.9865643,0.00028211338,0.010057888,0.00002925618,0.000019781264,0.000046280533,0.000041727326,0.000061113904,0.0028975045],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9999151,0.000014488798,0.0000029918692,0.000016445068,0.000033568005,0.000017306522],"domain_scores_gemma":[0.9999064,0.00004061,0.0000151906315,0.000013840729,0.000018220398,0.000005777046],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00013833967,0.00041039038,0.00024352407,0.00022295162,0.00014383365,0.00035889912,0.0006811708,0.00048052456,0.0006088428],"category_scores_gemma":[0.00034706676,0.00024023869,0.0005189429,0.00015956786,0.0002849205,0.0006107492,0.00026557798,0.00028192007,0.00015896372],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000051053215,0.000051587274,0.0013920179,0.0000635696,0.000038734852,0.0001653733,0.00009681142,0.8892122,0.09385735,0.007295182,0.00024725974,0.0075288387],"study_design_scores_gemma":[0.0000019937054,0.000012463737,0.00020796346,0.0000017450309,0.0000032468763,0.000014806334,0.000004123382,0.99435246,0.00477578,0.00040705327,0.00021520285,0.0000030641468],"about_ca_topic_score_codex":0.0019989233,"about_ca_topic_score_gemma":0.0022172104,"teacher_disagreement_score":0.0019989233,"about_ca_system_score_codex":0.0005403182,"about_ca_system_score_gemma":0.0003150468,"threshold_uncertainty_score":0.003974557},"labels":[],"label_agreement":null},{"id":"W3043253403","doi":"10.1109/ted.2020.3007598","title":"Numerical Solutions for Electric Field Lines and Breakdown Voltages in Superjunction-Like Power Devices","year":2020,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Silicon Carbide Semiconductor Technologies","field":"Engineering","cited_by":9,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Toronto","funders":"Fundamental Research Funds for the Central Universities; China Scholarship Council; National Natural Science Foundation of China","keywords":"Electric field; Breakdown voltage; Impact ionization; Voltage; High voltage; Insulator (electricity); Pillar; Electronic engineering; Electrical engineering; Computational physics; Field (mathematics); Physics; Computer science; Ionization; Optoelectronics; Engineering; Mathematics; Mechanical engineering","score_opus":0.016144293111943545,"score_gpt":0.23346030143211963,"score_spread":0.21731600832017609,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3043253403","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.058523484,0.0010027842,0.9103951,0.0005495774,0.000111475216,0.00010364614,0.00023769223,0.00030063026,0.028775608],"genre_scores_gemma":[0.5867418,0.0013314831,0.38873073,0.00022923478,0.00008915152,0.00051099586,0.00029612696,0.0002368792,0.021833515],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9998771,0.000029913377,0.000006802872,0.0000136538965,0.00005441402,0.000018063529],"domain_scores_gemma":[0.99956053,0.0002060579,0.000050321003,0.000028981756,0.0001362061,0.000017908826],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0005095325,0.00042092617,0.00040722667,0.00059878174,0.00038380406,0.00080023846,0.00080981496,0.0013469453,0.0036441307],"category_scores_gemma":[0.0019233053,0.00033119114,0.0004855044,0.0005368717,0.0005387977,0.00079449,0.0004402301,0.00069131056,0.0006744463],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000033520548,0.000042396903,0.00080724346,0.00019851908,0.000017633054,0.00021909525,0.00015884661,0.89588535,0.008905633,0.07438815,0.001392145,0.017951442],"study_design_scores_gemma":[0.000006352987,0.0000055749542,0.00009507782,0.000014885259,0.0000015495049,0.000019995987,0.000021533446,0.9942486,0.0004987274,0.0041853497,0.0008982273,0.0000040782143],"about_ca_topic_score_codex":0.0025822166,"about_ca_topic_score_gemma":0.0029573278,"teacher_disagreement_score":0.0036441307,"about_ca_system_score_codex":0.000639193,"about_ca_system_score_gemma":0.0008088235,"threshold_uncertainty_score":0.012190878},"labels":[],"label_agreement":null},{"id":"W3046463280","doi":"10.1109/ted.2020.3007398","title":"Sustained Benefits of NCFETs Under Extreme Scaling to the End of the IRDS","year":2020,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Ferroelectric and Negative Capacitance Devices","field":"Engineering","cited_by":12,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Alberta","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Quantum tunnelling; Physics; Scaling; Transistor; Subthreshold slope; Thermionic emission; Quantum; Field-effect transistor; Quantization (signal processing); Ballistic conduction; Condensed matter physics; Electron; Voltage; Quantum mechanics; Computer science","score_opus":0.022513902049981983,"score_gpt":0.21890563924591128,"score_spread":0.19639173719592928,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3046463280","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99249333,0.00018316336,0.0037522512,0.00013613101,0.000021355585,0.000005868789,0.000060529797,0.000091272974,0.00325613],"genre_scores_gemma":[0.9989079,0.000051745115,0.0007497583,0.00001415202,0.0000045368015,0.0000058657465,0.000025835066,0.000008361862,0.00023180115],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9999441,0.0000070227306,0.0000020185653,0.0000105271765,0.000019636485,0.000016685673],"domain_scores_gemma":[0.99980706,0.00007538285,0.000028271857,0.000027150716,0.000037859754,0.000024301562],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00014747886,0.00016833303,0.00020644629,0.00008418239,0.00017332073,0.0002864873,0.0003300171,0.00024456088,0.00074132043],"category_scores_gemma":[0.0007453943,0.000074345866,0.00013733197,0.00010130308,0.0002980897,0.00045726926,0.00023007175,0.00022987528,0.000077333636],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00050333235,0.00019457223,0.01278916,0.00028348362,0.0000831955,0.0011210942,0.00037820352,0.4907398,0.4456103,0.028022151,0.0019609323,0.018313823],"study_design_scores_gemma":[0.000035894675,0.00045736282,0.006655561,0.000023880515,0.000050576607,0.00019361703,0.00018568206,0.8952818,0.08662557,0.007962181,0.0024979713,0.000029812583],"about_ca_topic_score_codex":0.0008219555,"about_ca_topic_score_gemma":0.000919601,"teacher_disagreement_score":0.0008219555,"about_ca_system_score_codex":0.00028460365,"about_ca_system_score_gemma":0.00022154329,"threshold_uncertainty_score":0.00248003},"labels":[],"label_agreement":null},{"id":"W3097590894","doi":"10.1109/ted.2020.3033793","title":"Investigation Into Self Actuation Limitation and Current Carrying Capacity of Chalcogenide Phase Change GeTe-Based RF Switches","year":2020,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Phase-change materials and chalcogenides","field":"Materials Science","cited_by":23,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Radio frequency; Power (physics); Electrical engineering; RF power amplifier; Voltage; RF switch; Materials science; Electronic engineering; Optoelectronics; Engineering; CMOS","score_opus":0.11055549764982463,"score_gpt":0.29771457733525053,"score_spread":0.1871590796854259,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3097590894","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9978587,0.00022709864,0.0012647987,0.000020174248,0.0000046493255,0.0000065618356,0.000047430585,0.000029586681,0.0005410176],"genre_scores_gemma":[0.99790454,0.0002107386,0.001263242,0.000011156718,0.000004741772,0.000011249874,0.00007488327,0.000013350602,0.0005060612],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998306,0.000021366533,0.000009696083,0.00003082781,0.000074939344,0.000032541073],"domain_scores_gemma":[0.99958354,0.00020691929,0.00007697107,0.000049498914,0.00006326487,0.00001976656],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0002303503,0.00018767104,0.00021335146,0.00022158177,0.000116364216,0.0003356423,0.00023605702,0.00021429418,0.0008934069],"category_scores_gemma":[0.0004988363,0.00011062743,0.00012959425,0.00019867992,0.00027038375,0.00035425613,0.00017088256,0.00022475897,0.00013051555],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000023048864,0.000005835401,0.00033179397,0.000026361895,0.0000038524613,0.000040859315,0.000025603706,0.00016951679,0.9980065,0.00005121691,0.000012487512,0.0013028783],"study_design_scores_gemma":[0.0000019527024,0.00011277388,0.001542946,0.0000014827352,0.0000060444872,0.000062132814,0.000021107156,0.0004976548,0.99742585,0.000015122226,0.00031042215,0.0000024894925],"about_ca_topic_score_codex":0.00013651792,"about_ca_topic_score_gemma":0.00028327233,"teacher_disagreement_score":0.0008934069,"about_ca_system_score_codex":0.00016196023,"about_ca_system_score_gemma":0.000092231756,"threshold_uncertainty_score":0.0029887557},"labels":[],"label_agreement":null},{"id":"W3112323218","doi":"10.1109/ted.2020.3041216","title":"Negative-Capacitance FET With a Cold Source","year":2020,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Ferroelectric and Negative Capacitance Devices","field":"Engineering","cited_by":17,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McGill University","funders":"Fonds de recherche du Québec – Nature et technologies; China Scholarship Council; Natural Sciences and Engineering Research Council of Canada; National Natural Science Foundation of China","keywords":"Field-effect transistor; Capacitance; Ferroelectricity; Transistor; Physics; Materials science; Optoelectronics; Analytical Chemistry (journal); Electrical engineering; Quantum mechanics; Chemistry; Electrode; Dielectric; Engineering","score_opus":0.011426983786815684,"score_gpt":0.19506789951673123,"score_spread":0.18364091572991553,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3112323218","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9624676,0.00035154278,0.016137961,0.00029102,0.000068918394,0.000021022412,0.00026995537,0.00013649448,0.02025548],"genre_scores_gemma":[0.99346584,0.000120287215,0.0042198217,0.000027622533,0.0000108110435,0.000010375801,0.00006717626,0.000009457983,0.0020687226],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99995375,0.000003714516,0.0000017685096,0.000009162408,0.000021849211,0.000009716661],"domain_scores_gemma":[0.9999443,0.000021438836,0.0000068699756,0.000008545006,0.000011317843,0.000007412392],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000086650805,0.0001755379,0.0002722657,0.00015268852,0.00023896057,0.00041312704,0.00049999164,0.00046464268,0.0018927563],"category_scores_gemma":[0.00020550635,0.00008552484,0.00022762448,0.00020475098,0.00024530164,0.00056337693,0.00021062384,0.0001691662,0.0002214107],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00061335904,0.00014708367,0.0032907403,0.00041579994,0.00010485764,0.0016937503,0.00020059178,0.11771122,0.7267144,0.12841585,0.0030694245,0.01762302],"study_design_scores_gemma":[0.00012854392,0.0005597583,0.004424458,0.000049834023,0.000093841554,0.0008417364,0.00013904349,0.7955729,0.17733008,0.014710713,0.0060911044,0.000058013877],"about_ca_topic_score_codex":0.0017990693,"about_ca_topic_score_gemma":0.0033399912,"teacher_disagreement_score":0.0018927563,"about_ca_system_score_codex":0.0005137855,"about_ca_system_score_gemma":0.00026538916,"threshold_uncertainty_score":0.006331861},"labels":[],"label_agreement":null},{"id":"W3112926552","doi":"10.1109/ted.2020.3038623","title":"Low-Temperature Self-Aligned-Silicide-Capable Transistor Process Using Solid-Phase-Epitaxy and Lift-Off for Hybrid Substrates","year":2020,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Materials science; Optoelectronics; Plasma-enhanced chemical vapor deposition; Silicon; Transistor; Amorphous solid; Epitaxy; Electron mobility; Fabrication; Bilayer; Nanotechnology; Voltage; Electrical engineering; Layer (electronics); Chemistry; Crystallography","score_opus":0.011842196968918561,"score_gpt":0.26324409847316266,"score_spread":0.2514019015042441,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3112926552","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.89532274,0.001619445,0.09030254,0.0002419705,0.00024808507,0.00032192766,0.00087534764,0.0011358395,0.0099321455],"genre_scores_gemma":[0.89020157,0.0008271536,0.10179765,0.000071259245,0.00004819049,0.00029278573,0.0006482053,0.00012566548,0.005987477],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999249,0.000003441553,0.0000042098845,0.00001478906,0.000041949734,0.000010733586],"domain_scores_gemma":[0.9999465,0.0000119577435,0.000013404087,0.000010349059,0.00000999287,0.000007859974],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00007411475,0.00032521377,0.00033446477,0.0001978368,0.00023336135,0.0002758645,0.0005057725,0.00026753024,0.0010352377],"category_scores_gemma":[0.00008588247,0.00020166492,0.00024998313,0.00018737798,0.00017805539,0.0002143138,0.00033938914,0.0005222888,0.0007250047],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0000071121967,0.000007589531,0.00005053782,0.000027619883,0.0000030281742,0.00006695307,0.000010924256,0.00007517979,0.99835664,0.00023089793,0.00007671429,0.0010867836],"study_design_scores_gemma":[0.000013315964,0.000108496104,0.0011038991,0.0000063965804,0.000010154946,0.00052192184,0.000011486733,0.0022617609,0.9917292,0.0001122856,0.004111781,0.00000927807],"about_ca_topic_score_codex":0.00038190724,"about_ca_topic_score_gemma":0.001372687,"teacher_disagreement_score":0.0010352377,"about_ca_system_score_codex":0.00020937363,"about_ca_system_score_gemma":0.00035823422,"threshold_uncertainty_score":0.0034632087},"labels":[],"label_agreement":null},{"id":"W3117376328","doi":"10.1109/ted.2020.3044559","title":"Using Anisotropic Insulators to Engineer the Electrostatics of Conventional and Tunnel Field-Effect Transistors","year":2020,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Semiconductor materials and devices","field":"Engineering","cited_by":6,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"National Institute for Nanotechnology; University of Waterloo","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Dielectric; Electrostatics; Materials science; Anisotropy; Insulator (electricity); Gate dielectric; Field-effect transistor; Optoelectronics; Transistor; Permittivity; Electric field; Semiconductor; Electrical engineering; Engineering physics; Physics; Engineering; Optics; Voltage","score_opus":0.017346112206468124,"score_gpt":0.24034692062092985,"score_spread":0.22300080841446174,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3117376328","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.98170865,0.00029520103,0.013038744,0.00007334168,0.000036089008,0.000013953814,0.00006044232,0.0000618529,0.004711769],"genre_scores_gemma":[0.9931651,0.00026213314,0.006026789,0.000015088562,0.0000060378165,0.00001507185,0.000024995452,0.000013427162,0.00047146343],"study_design_codex":"bench_or_experimental","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9999579,0.0000048681995,0.0000020454245,0.0000055801092,0.000015143449,0.000014463905],"domain_scores_gemma":[0.9999515,0.000017346512,0.000011210351,0.0000072967873,0.000006501444,0.000006081109],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00009264198,0.00015904682,0.00013594271,0.0001301256,0.00021098724,0.00036096512,0.0002196407,0.0002471874,0.00038755074],"category_scores_gemma":[0.00017237964,0.00015778342,0.00016373146,0.00013504864,0.0003572372,0.00039303978,0.0001634195,0.00020542055,0.00006720353],"study_design_candidate":"simulation_or_modeling","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0001957425,0.00014490343,0.0029481906,0.00019446999,0.000052066625,0.00047393347,0.00019419126,0.21837187,0.73492765,0.0322625,0.00062770327,0.009606864],"study_design_scores_gemma":[0.00012342387,0.0004256256,0.0038427657,0.0000307306,0.000057707042,0.00020239437,0.00020051238,0.7949437,0.18216829,0.008483397,0.009462036,0.000059529884],"about_ca_topic_score_codex":0.00087132957,"about_ca_topic_score_gemma":0.0013924715,"teacher_disagreement_score":0.00087132957,"about_ca_system_score_codex":0.0002850675,"about_ca_system_score_gemma":0.00019393892,"threshold_uncertainty_score":0.0020683408},"labels":[],"label_agreement":null},{"id":"W3138534040","doi":"10.1109/ted.2021.3063073","title":"A Monolithic Amorphous-Selenium/CMOS Single-Photon-Counting X-Ray Detector","year":2021,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Advanced X-ray and CT Imaging","field":"Engineering","cited_by":5,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Science and Engineering Research Council; Canada Foundation for Innovation; CMC Microsystems","keywords":"CMOS; Dot pitch; Pixel; Detector; Photon counting; Optoelectronics; X-ray detector; Physics; Materials science; Image resolution; Photon; Image sensor; Optics; CMOS sensor","score_opus":0.009215506036227011,"score_gpt":0.21532780716656647,"score_spread":0.20611230113033946,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3138534040","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.6283696,0.0034831867,0.3487078,0.00073616416,0.00041311295,0.0006208341,0.0013604227,0.0056946934,0.010614127],"genre_scores_gemma":[0.72300106,0.0004503037,0.2691532,0.0003102031,0.00007475124,0.00013345727,0.00031638736,0.00006392581,0.0064967554],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9995347,0.000024192335,0.000015249302,0.00014803866,0.00024683875,0.0000309805],"domain_scores_gemma":[0.9996486,0.000060084385,0.00006753498,0.000042588214,0.00013338048,0.00004786349],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00029285304,0.00027635755,0.00048180562,0.00024992926,0.0003302758,0.0006989604,0.0017125917,0.00071280356,0.0013942582],"category_scores_gemma":[0.00036482996,0.000351961,0.00024977347,0.00027168848,0.00026599586,0.0006466425,0.00030771462,0.000406898,0.0006607443],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000115613,0.00009399414,0.0014374165,0.00014030044,0.000027611386,0.00019746891,0.000036700952,0.0012268141,0.976928,0.0009477771,0.0010047717,0.017843496],"study_design_scores_gemma":[0.00007176786,0.0011628595,0.004981822,0.000018022,0.000075498734,0.0011565967,0.0000324808,0.039443783,0.940057,0.00016483867,0.01278284,0.000052479456],"about_ca_topic_score_codex":0.0008725666,"about_ca_topic_score_gemma":0.0016891451,"teacher_disagreement_score":0.0017125917,"about_ca_system_score_codex":0.00063641625,"about_ca_system_score_gemma":0.0008619718,"threshold_uncertainty_score":0.004664302},"labels":[],"label_agreement":null},{"id":"W3146831602","doi":"10.1109/ted.2021.3069153","title":"Effective Leakage Current Reduction in GaN Ultraviolet Avalanche Photodiodes With an Ion-Implantation Isolation Method","year":2021,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":25,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"","funders":"Army Research Office; National Institute for Nanotechnology; U.S. Department of Energy; National Science Foundation","keywords":"Avalanche photodiode; Photocurrent; Materials science; Optoelectronics; Dark current; Breakdown voltage; Chemical vapor deposition; Homojunction; Ion implantation; Metalorganic vapour phase epitaxy; Ultraviolet; Analytical Chemistry (journal); Photodiode; APDS; Ion; Voltage; Nanotechnology; Chemistry; Photodetector; Optics; Electrical engineering; Doping; Epitaxy; Physics","score_opus":0.01150012109295822,"score_gpt":0.2920899705238464,"score_spread":0.28058984943088816,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3146831602","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.98253214,0.0023557874,0.013555813,0.00007362264,0.000020312098,0.000011433774,0.00005142331,0.00018138555,0.0012181007],"genre_scores_gemma":[0.9898629,0.0005991235,0.008486587,0.00002872254,0.000013013231,0.000010287953,0.0000738839,0.000017639522,0.0009078771],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99988866,0.000013181703,0.0000068027166,0.000022958711,0.000046531644,0.000021918786],"domain_scores_gemma":[0.9998921,0.000027829246,0.00002547584,0.000012455081,0.000030341493,0.000011697654],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00012583208,0.00029101025,0.00017931411,0.00012610693,0.000088444154,0.00031615706,0.0003306567,0.00019902593,0.0004700856],"category_scores_gemma":[0.00017548352,0.00012370913,0.00015392918,0.00009116019,0.0001304802,0.00035854327,0.00019866171,0.00023166169,0.00016871323],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000030671825,0.000008392714,0.0002897553,0.000030334008,0.000007363386,0.000035026922,0.000014839906,0.00007535406,0.9961908,0.000053751777,0.000028504995,0.003235214],"study_design_scores_gemma":[0.000008527184,0.0001738664,0.0027143385,0.0000026624537,0.00001976447,0.00017946474,0.00000933166,0.0012742387,0.9947737,0.000033625915,0.0008066815,0.0000038312583],"about_ca_topic_score_codex":0.00011510216,"about_ca_topic_score_gemma":0.00021021256,"teacher_disagreement_score":0.0004700856,"about_ca_system_score_codex":0.00015531095,"about_ca_system_score_gemma":0.00008180574,"threshold_uncertainty_score":0.0015725493},"labels":[],"label_agreement":null},{"id":"W3152605160","doi":"10.1109/ted.2021.3070557","title":"Random Telegraph Signal in n<sup>+</sup>/p-Well CMOS Single-Photon Avalanche Diodes","year":2021,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Advanced Optical Sensing Technologies","field":"Physics and Astronomy","cited_by":20,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McMaster University","funders":"Natural Sciences and Engineering Research Council of Canada; Canada Research Chairs; CMC Microsystems","keywords":"Physics; Avalanche diode; Noise (video); Biasing; Single-photon avalanche diode; Avalanche photodiode; Diode; Amplitude; SIGNAL (programming language); Phase noise; Photon; Avalanche breakdown; Burst noise; Voltage; Optoelectronics; CMOS; Detector; Optics; Noise figure; Breakdown voltage; Quantum mechanics; Computer science","score_opus":0.010492594440378394,"score_gpt":0.23633515288657667,"score_spread":0.22584255844619827,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3152605160","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9729329,0.00029296026,0.025419818,0.00010881085,0.000010846247,0.000017388114,0.000098624114,0.00016961095,0.0009489936],"genre_scores_gemma":[0.99680257,0.00006790364,0.0027137247,0.000017776303,0.000004602776,0.0000079348,0.000034779398,0.000015760772,0.00033500456],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9997198,0.000052846975,0.000011021899,0.00007330319,0.00011824721,0.000024862618],"domain_scores_gemma":[0.9984084,0.0009541111,0.00039485324,0.00007437002,0.00011929546,0.00004905583],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0003306466,0.00026631608,0.00018220271,0.0002698085,0.0001524828,0.000285711,0.0004369069,0.00036320538,0.0005974079],"category_scores_gemma":[0.0017971703,0.00015962005,0.00013918769,0.00029954466,0.00054454926,0.00068221445,0.000193726,0.00026546558,0.000116020965],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0008246478,0.00009026885,0.008454216,0.00020193566,0.000045896304,0.0009912398,0.00043600885,0.01452346,0.95433897,0.003774413,0.00018978605,0.016129214],"study_design_scores_gemma":[0.000046420744,0.00067993574,0.010489063,0.000022034055,0.00005192792,0.0017061676,0.00013900927,0.14762832,0.8365184,0.0015156701,0.0011640302,0.00003895636],"about_ca_topic_score_codex":0.00035522555,"about_ca_topic_score_gemma":0.0005085129,"teacher_disagreement_score":0.0005974079,"about_ca_system_score_codex":0.00046240518,"about_ca_system_score_gemma":0.000128677,"threshold_uncertainty_score":0.0033549666},"labels":[],"label_agreement":null},{"id":"W3152795045","doi":"10.1109/ted.2021.3069729","title":"Scalable mmWave Non-Volatile Phase Change GeTe-Based Compact Monolithically Integrated Wideband Digital Switched Attenuator","year":2021,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Photonic and Optical Devices","field":"Engineering","cited_by":25,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Attenuator (electronics); Materials science; Insertion loss; Resistor; Attenuation; Optoelectronics; Electrical engineering; Bandwidth (computing); Switching time; Center frequency; Electronic engineering; Computer science; Telecommunications; Engineering; Physics; Band-pass filter; Voltage; Optics","score_opus":0.01576238450188121,"score_gpt":0.24814217838425948,"score_spread":0.23237979388237825,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3152795045","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.81967485,0.0037446073,0.15994976,0.00036504355,0.00030509217,0.00012102008,0.00034150554,0.0027353084,0.01276289],"genre_scores_gemma":[0.9427114,0.0006121958,0.04986931,0.00014668854,0.0000789746,0.000040951283,0.00019586089,0.00007316358,0.0062714564],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99988866,0.00000782111,0.0000045552883,0.000033924145,0.00004953263,0.000015425927],"domain_scores_gemma":[0.9999219,0.000014676054,0.000025262963,0.000010642786,0.00001964731,0.000007834576],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000071482995,0.00024361884,0.00022516439,0.00020949563,0.00012259823,0.00034979606,0.0007063615,0.00025807015,0.0011650609],"category_scores_gemma":[0.000117596246,0.00017012966,0.00023568571,0.00014496753,0.00015491279,0.0005282024,0.00032600504,0.00024886496,0.0003788585],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00007287032,0.000017127857,0.00036259883,0.00007964324,0.00001940176,0.00010780088,0.00004183198,0.0005946498,0.9814354,0.0007620578,0.00042584387,0.016080685],"study_design_scores_gemma":[0.000033224107,0.00046505363,0.0018210451,0.000009189963,0.000060226528,0.0006515588,0.000039049315,0.014323458,0.9692815,0.00016015928,0.013135623,0.000019830735],"about_ca_topic_score_codex":0.00017507088,"about_ca_topic_score_gemma":0.0005400561,"teacher_disagreement_score":0.0011650609,"about_ca_system_score_codex":0.00022075934,"about_ca_system_score_gemma":0.000091690774,"threshold_uncertainty_score":0.0038975477},"labels":[],"label_agreement":null},{"id":"W3162842780","doi":"10.1109/ted.2021.3078672","title":"Experimental Investigation of Thermal Actuation Crosstalk in Phase-Change RF Switches Using Transient Thermoreflectance Imaging","year":2021,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Phase-change materials and chalcogenides","field":"Materials Science","cited_by":19,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Materials science; Microheater; Thermal; Transient (computer programming); Radio frequency; Optoelectronics; Microfabrication; Transient response; Switching time; Multiphysics; Electronic engineering; Finite element method; Electrical engineering; Engineering; Computer science; Physics; Fabrication","score_opus":0.06177187295539421,"score_gpt":0.32782075692183743,"score_spread":0.2660488839664432,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3162842780","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9888311,0.00019289304,0.009024422,0.00003727247,0.000012679869,0.000018923458,0.000074335054,0.00008218455,0.0017262071],"genre_scores_gemma":[0.99321544,0.00015120838,0.0058779903,0.000024891266,0.0000075604985,0.000022608168,0.00005412252,0.000028547856,0.0006176602],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9997651,0.000030500063,0.000008273207,0.000065517925,0.00008057882,0.000050065177],"domain_scores_gemma":[0.99971133,0.00012562479,0.00007044466,0.000035308414,0.00003665113,0.000020514999],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00027253138,0.000340983,0.00019704537,0.0001794205,0.000245116,0.00025501128,0.00034816936,0.00031795105,0.0012620469],"category_scores_gemma":[0.00031215957,0.000176763,0.000118757394,0.0002568166,0.00049007125,0.00041501242,0.0002735367,0.0003957919,0.00013824592],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0000552536,0.000022395974,0.00015370386,0.000019200572,0.0000031370987,0.00004811296,0.00004628726,0.0003011744,0.998293,0.00012942989,0.000022678067,0.0009057296],"study_design_scores_gemma":[0.0000061518226,0.00015404719,0.0012667715,0.000001884774,0.0000045088977,0.00006755125,0.000031193602,0.0026258454,0.99552023,0.000027062522,0.00028930604,0.000005357682],"about_ca_topic_score_codex":0.00024407824,"about_ca_topic_score_gemma":0.00037520225,"teacher_disagreement_score":0.0012620469,"about_ca_system_score_codex":0.00042932734,"about_ca_system_score_gemma":0.0001477694,"threshold_uncertainty_score":0.004221916},"labels":[],"label_agreement":null},{"id":"W3165122809","doi":"10.1109/ted.2021.3074104","title":"Modeling of Nonlinear Dynamics and Temperature Stability of Doped Silicon Microresonators","year":2021,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Mechanical and Optical Resonators","field":"Physics and Astronomy","cited_by":4,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Windsor","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Resonator; Nonlinear system; Vibration; Anharmonicity; Stability (learning theory); Materials science; Silicon; Physics; Mechanics; Control theory (sociology); Spring (device); Condensed matter physics; Optoelectronics; Acoustics; Computer science; Thermodynamics; Quantum mechanics","score_opus":0.008465453935184712,"score_gpt":0.23851201415874668,"score_spread":0.23004656022356196,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3165122809","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.5671289,0.0005651891,0.416634,0.00028843147,0.000038029502,0.000065780056,0.00016691335,0.00029551287,0.014817221],"genre_scores_gemma":[0.9850507,0.00019213231,0.01103932,0.000013814094,0.0000060039433,0.000047892285,0.000026677284,0.0000228831,0.0036005527],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9999212,0.000013724188,0.00000345585,0.000021673699,0.000027286154,0.000012585714],"domain_scores_gemma":[0.9999033,0.000037842998,0.000026655349,0.000009733477,0.000016095888,0.000006304557],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00018043288,0.00035290478,0.00027431524,0.00019449557,0.0002721868,0.00040359388,0.00060615427,0.0006118544,0.0007280456],"category_scores_gemma":[0.00035031067,0.00027252073,0.0003375708,0.00012269833,0.0005731398,0.0003860264,0.00029277656,0.00027411053,0.00016475991],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000041050273,0.000029307554,0.0008387008,0.000031412863,0.000014370465,0.00011186089,0.00008928226,0.9255466,0.06318407,0.0068887114,0.00007298001,0.0031515637],"study_design_scores_gemma":[0.0000014095294,0.000006843796,0.000114365,0.0000013954055,0.0000013249476,0.000006804429,0.0000035293072,0.99784243,0.001599495,0.00031169178,0.00010820036,0.0000024939739],"about_ca_topic_score_codex":0.004073738,"about_ca_topic_score_gemma":0.003110151,"teacher_disagreement_score":0.004073738,"about_ca_system_score_codex":0.00072716567,"about_ca_system_score_gemma":0.00050402695,"threshold_uncertainty_score":0.008100033},"labels":[],"label_agreement":null},{"id":"W3169700765","doi":"10.1109/ted.2021.3083602","title":"A Multiscale Simulation Framework for Steep-Slope Si Nanowire Cold Source FET","year":2021,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":11,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McGill University","funders":"Fonds de recherche du Québec – Nature et technologies; Natural Sciences and Engineering Research Council of Canada; National Natural Science Foundation of China","keywords":"Nanowire; Scaling; Benchmark (surveying); Multiscale modeling; Optoelectronics; MOSFET; Computation; Materials science; Transistor; Electronic engineering; Physics; Voltage; Computational physics; Computer science; Engineering; Quantum mechanics; Chemistry; Algorithm","score_opus":0.01898258309221668,"score_gpt":0.27304378055854284,"score_spread":0.25406119746632616,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3169700765","genre_codex":"methods","genre_gemma":"methods","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"methods","genre_consensus":"methods","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.09199687,0.0006846417,0.87798524,0.00070481474,0.0001478742,0.00017040761,0.00094226707,0.0012012135,0.026166754],"genre_scores_gemma":[0.7529642,0.000771851,0.23755753,0.0002652807,0.00008974312,0.0007383311,0.00096219825,0.0004919297,0.0061588],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9998896,0.00002980176,0.00000505442,0.000013889604,0.000043433858,0.000018288716],"domain_scores_gemma":[0.99980205,0.00009127727,0.000015343678,0.000019885416,0.00004939664,0.000022135875],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00031573116,0.0005204786,0.0006747835,0.0004556628,0.00058709295,0.00064830284,0.0013577925,0.001095952,0.003669924],"category_scores_gemma":[0.0008106167,0.00036304787,0.000804381,0.00035961848,0.00047767605,0.0005571067,0.00072105275,0.0006911679,0.00039324592],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000017154383,0.00002868255,0.0004389696,0.00003675358,0.000022209035,0.000065158005,0.000035298584,0.96766895,0.002904237,0.026071602,0.00043739713,0.0022735426],"study_design_scores_gemma":[0.0000030223632,0.0000032043731,0.00002610403,0.0000017582862,0.0000015980229,0.0000028406314,0.0000025666882,0.99822515,0.000091036716,0.0013047255,0.00033624677,0.0000018327504],"about_ca_topic_score_codex":0.011150637,"about_ca_topic_score_gemma":0.008523162,"teacher_disagreement_score":0.011150637,"about_ca_system_score_codex":0.0008690627,"about_ca_system_score_gemma":0.0012500236,"threshold_uncertainty_score":0.022171438},"labels":[],"label_agreement":null},{"id":"W3172021905","doi":"10.1109/ted.2021.3080225","title":"Performance Optimization of Monolayer 1T/1T’-2H MoX<sub>2</sub> Lateral Heterojunction Transistors","year":2021,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"2D Materials and Applications","field":"Materials Science","cited_by":3,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Natural Sciences and Engineering Research Council of Canada; Ontario Ministry of Research, Innovation and Science","keywords":"Heterojunction; Schottky barrier; Materials science; Optoelectronics; Field-effect transistor; Doping; Metal gate; Transistor; Physics; Nanotechnology; Topology (electrical circuits); Electrical engineering; Gate oxide; Quantum mechanics; Engineering","score_opus":0.009521083941529137,"score_gpt":0.21877572038051576,"score_spread":0.20925463643898662,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3172021905","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99819237,0.0004025393,0.00042003303,0.00004795036,0.0000066264865,0.000004648233,0.000107987136,0.000040785704,0.0007769726],"genre_scores_gemma":[0.9979267,0.0003066668,0.00072074303,0.00001702375,0.000007060042,0.0000098418,0.00015562802,0.000021399637,0.000834863],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998809,0.000008026942,0.000006361386,0.0000318648,0.000041634987,0.00003128023],"domain_scores_gemma":[0.9999025,0.000023396076,0.00001600097,0.00000966809,0.000035882687,0.000012569633],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00014786088,0.00031569172,0.00029965377,0.00018493949,0.0003036521,0.00052982225,0.00032916557,0.00044132,0.0012517727],"category_scores_gemma":[0.0002717545,0.00014746423,0.00015085108,0.00032086033,0.00011572462,0.00044481966,0.00020834088,0.00014084883,0.00033907848],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00012423962,0.000028324712,0.0011531728,0.000054419426,0.000016121228,0.00008910009,0.000034219607,0.0018083932,0.9934784,0.00010326963,0.00016972056,0.0029405851],"study_design_scores_gemma":[0.00001723892,0.00044380585,0.0062257843,0.0000056995145,0.00003161305,0.00008765523,0.000072316296,0.015798887,0.9763312,0.00004677336,0.0009276533,0.000011399926],"about_ca_topic_score_codex":0.0011468349,"about_ca_topic_score_gemma":0.0028540334,"teacher_disagreement_score":0.0012517727,"about_ca_system_score_codex":0.0004511771,"about_ca_system_score_gemma":0.00018059708,"threshold_uncertainty_score":0.0041876435},"labels":[],"label_agreement":null},{"id":"W3185186685","doi":"10.1109/ted.2021.3096779","title":"A Surface Potential Model for Field-Effect Transistors With Bound-Charge Engineering","year":2021,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Semiconductor materials and devices","field":"Engineering","cited_by":4,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McGill University","funders":"Fonds de recherche du Québec – Nature et technologies; Natural Sciences and Engineering Research Council of Canada","keywords":"Nanowire; Transistor; Doping; Electrostatics; Materials science; Field-effect transistor; Semiconductor; Surface charge; Dopant; Silicon; Optoelectronics; Nanotechnology; Permittivity; Condensed matter physics; Physics; Dielectric; Quantum mechanics; Voltage","score_opus":0.007453721739730461,"score_gpt":0.21070939897482913,"score_spread":0.20325567723509866,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3185186685","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.046997197,0.002025639,0.8757395,0.0022804933,0.00034143173,0.00019398781,0.00055136904,0.00040639783,0.071463935],"genre_scores_gemma":[0.8244287,0.0024164494,0.09859818,0.00068303087,0.00031229126,0.00075880846,0.0006342522,0.00035319166,0.07181508],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9998615,0.000030051671,0.0000067199985,0.000021060696,0.000060272643,0.000020344938],"domain_scores_gemma":[0.9998574,0.000059254493,0.0000105066365,0.000016502358,0.000043224612,0.00001299545],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0002472791,0.00062230375,0.0006981123,0.00054425735,0.00076387875,0.0009755842,0.0016924524,0.0021211295,0.0035176692],"category_scores_gemma":[0.00065919955,0.00027077046,0.0008720625,0.0007398465,0.0008248857,0.0016093678,0.0004560752,0.0009830601,0.0012428559],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00002414832,0.000059836046,0.00017836082,0.00009635361,0.000022362723,0.00038568652,0.00010335705,0.5196937,0.012953409,0.45694286,0.003173777,0.006366277],"study_design_scores_gemma":[0.000005251214,0.000010789073,0.000036865265,0.0000034897957,0.0000026291814,0.000039756535,0.000007861002,0.97154206,0.00028857216,0.02608108,0.001975359,0.0000062750405],"about_ca_topic_score_codex":0.003290717,"about_ca_topic_score_gemma":0.002483584,"teacher_disagreement_score":0.0035176692,"about_ca_system_score_codex":0.0010377488,"about_ca_system_score_gemma":0.00090576493,"threshold_uncertainty_score":0.011767745},"labels":[],"label_agreement":null},{"id":"W3186665451","doi":"10.1109/ted.2021.3096178","title":"Exploiting Fringing Fields Created by High-<i>κ</i>Gate Insulators to Enhance the Performance of Ultrascaled 2-D-Material-Based Transistors","year":2021,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Semiconductor materials and devices","field":"Engineering","cited_by":5,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Natural Sciences and Engineering Research Council of Canada; Ontario Ministry of Research, Innovation and Science","keywords":"Quantum tunnelling; Leakage (economics); Optoelectronics; Time-dependent gate oxide breakdown; Materials science; Transistor; MOSFET; Gate oxide; Electrical engineering; Logic gate; Electronic engineering; Engineering; Voltage","score_opus":0.004644020142653645,"score_gpt":0.20803347394883048,"score_spread":0.20338945380617685,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3186665451","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9769035,0.0003528033,0.018713707,0.000098669145,0.000040607818,0.000017943881,0.00009752213,0.00011453683,0.0036607003],"genre_scores_gemma":[0.9934691,0.00019433137,0.0059363577,0.000018435465,0.0000040148097,0.000010663372,0.000030547795,0.00001485693,0.00032171086],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999758,0.0000024975618,8.5352684e-7,0.0000033679855,0.000009369704,0.000008088351],"domain_scores_gemma":[0.9999373,0.000028656847,0.00001612778,0.000007028686,0.0000051823017,0.000005855686],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00009749733,0.0002409379,0.00015198896,0.000114034054,0.00021417202,0.0003695516,0.00034317878,0.00031645532,0.00068402494],"category_scores_gemma":[0.00019544423,0.00013137083,0.00020206104,0.00011727375,0.00030247465,0.00031576035,0.00016028213,0.00024655095,0.000091031536],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00013071216,0.00020148941,0.004415482,0.00031117216,0.00006904041,0.00054285536,0.00017164233,0.28949982,0.6829461,0.014207737,0.0006444265,0.006859489],"study_design_scores_gemma":[0.00005717213,0.00019381869,0.003371445,0.00001954295,0.000028102928,0.00013153897,0.000068563844,0.85393167,0.13687012,0.0029713626,0.0023236042,0.000033112457],"about_ca_topic_score_codex":0.0018214467,"about_ca_topic_score_gemma":0.0037725035,"teacher_disagreement_score":0.0018214467,"about_ca_system_score_codex":0.00045849598,"about_ca_system_score_gemma":0.00027898795,"threshold_uncertainty_score":0.0036216974},"labels":[],"label_agreement":null},{"id":"W3200713636","doi":"10.1109/ted.2021.3108125","title":"Feedback Stabilization of a Negative-Capacitance Ferroelectric and its Application to Improve the <i>f</i> <sub>T</sub> of a MOSFET","year":2021,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Ferroelectric and Negative Capacitance Devices","field":"Engineering","cited_by":5,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Alberta","funders":"Natural Sciences and Engineering Research Council of Canada; Alberta Innovates; University of Alberta","keywords":"Negative impedance converter; Capacitance; Ferroelectricity; MOSFET; Transistor; Field-effect transistor; Electrical engineering; Materials science; Optoelectronics; Physics; Electronic engineering; Voltage; Engineering; Quantum mechanics; Voltage source; Electrode; Dielectric","score_opus":0.006737274887353541,"score_gpt":0.20624198198003163,"score_spread":0.1995047070926781,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3200713636","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.8493981,0.0015729149,0.13275544,0.0008108224,0.00036769424,0.00005185619,0.0001240427,0.0006508136,0.014268365],"genre_scores_gemma":[0.98060054,0.00029403213,0.017470075,0.000065889166,0.000039412414,0.000011987619,0.000021381942,0.000017526689,0.0014792121],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99995756,0.0000026668451,0.0000014745187,0.000014889541,0.000017092543,0.0000064072347],"domain_scores_gemma":[0.9999231,0.000020115634,0.000018051962,0.000007843408,0.000020497127,0.00001040592],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000072241935,0.00023834188,0.00016646141,0.00013200774,0.00019039988,0.00017922388,0.00040043067,0.00035664733,0.0009827946],"category_scores_gemma":[0.00023002963,0.0000827178,0.00011885345,0.000115985684,0.0002263953,0.00032041466,0.00018016572,0.00017765346,0.00021399444],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000060862676,0.000018507835,0.00016737884,0.000038595575,0.0000038040805,0.00012152869,0.000032545642,0.0021119297,0.9860306,0.0030023945,0.0003178774,0.008094028],"study_design_scores_gemma":[0.000029813225,0.00023188458,0.00047008228,0.000013796222,0.000018316094,0.00041593396,0.00002167356,0.098506376,0.8945382,0.001278133,0.004461344,0.000014350658],"about_ca_topic_score_codex":0.0005767079,"about_ca_topic_score_gemma":0.00086298765,"teacher_disagreement_score":0.0009827946,"about_ca_system_score_codex":0.0003111787,"about_ca_system_score_gemma":0.00016399488,"threshold_uncertainty_score":0.0032877922},"labels":[],"label_agreement":null},{"id":"W3202956879","doi":"10.1109/ted.2021.3105948","title":"A Novel IGBT With Voltage-Clamping for Turn-on Overshoot Suppression Under Hard-Switching","year":2021,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Silicon Carbide Semiconductor Technologies","field":"Engineering","cited_by":7,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Toronto","funders":"Sichuan Province Science and Technology Support Program; China Scholarship Council","keywords":"Insulated-gate bipolar transistor; Electrical engineering; Topology (electrical circuits); Computer science; Physics; Algorithm; Voltage; Engineering","score_opus":0.02108421978554947,"score_gpt":0.243694003316967,"score_spread":0.22260978353141753,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3202956879","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.60979843,0.0037236575,0.36626095,0.00046710938,0.00042588182,0.00021247192,0.0004957462,0.0054928428,0.013122927],"genre_scores_gemma":[0.97335625,0.0004639855,0.023530265,0.00007688316,0.00003345857,0.000034331686,0.00010982232,0.00005328736,0.0023417994],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99992955,0.0000064978676,0.0000032295877,0.000016664679,0.000028933126,0.000015156224],"domain_scores_gemma":[0.99992526,0.000007963204,0.000012345677,0.000011425815,0.000028661723,0.000014336896],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000100935606,0.00043416405,0.00040435523,0.00021601553,0.00030781556,0.00049335125,0.0014611788,0.0007019851,0.0012708185],"category_scores_gemma":[0.00010618477,0.00013451836,0.00032433658,0.00043861134,0.00019683749,0.0005159129,0.00012974163,0.00024906293,0.00037971998],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00043566784,0.0001536135,0.0013421255,0.0004201282,0.00007791735,0.0006304373,0.00014051751,0.013189409,0.92605436,0.0034669952,0.0016317536,0.052457027],"study_design_scores_gemma":[0.00026108033,0.0022328722,0.00898476,0.00011198308,0.00044913558,0.002840566,0.000099698074,0.43113258,0.52501994,0.0026285278,0.026165532,0.00007344492],"about_ca_topic_score_codex":0.0013928674,"about_ca_topic_score_gemma":0.0022812246,"teacher_disagreement_score":0.0014611788,"about_ca_system_score_codex":0.00049534044,"about_ca_system_score_gemma":0.00038135247,"threshold_uncertainty_score":0.004251361},"labels":[],"label_agreement":null},{"id":"W3210132513","doi":"10.1109/ted.2021.3120970","title":"Simulation Study of a <i>p</i>-GaN HEMT With an Integrated Schottky Barrier Diode","year":2021,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":9,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Toronto","funders":"Fundamental Research Funds for the Central Universities; China Scholarship Council; National Natural Science Foundation of China","keywords":"High-electron-mobility transistor; Schottky diode; Notation; Diode; Topology (electrical circuits); Electrical engineering; Materials science; Mathematics; Physics; Optoelectronics; Transistor; Engineering; Voltage; Arithmetic","score_opus":0.013544098960112758,"score_gpt":0.26772550396914047,"score_spread":0.2541814050090277,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3210132513","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.90559316,0.0010845788,0.048226263,0.00093256583,0.00013799718,0.00009976258,0.0011199432,0.0005430818,0.04226272],"genre_scores_gemma":[0.9920332,0.00021485679,0.004766486,0.000057822184,0.00000963295,0.000057823287,0.00016801631,0.000026048487,0.0026661402],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99987686,0.000027450835,0.000004730771,0.00001800067,0.000039166265,0.00003367307],"domain_scores_gemma":[0.9997811,0.000094585965,0.000025808327,0.000015919411,0.000063492145,0.000019053075],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00020995374,0.00043454164,0.00055526185,0.00034590307,0.0005331371,0.0005719041,0.0008383456,0.0012179688,0.002762351],"category_scores_gemma":[0.00044335707,0.00032324012,0.00083468575,0.0004834618,0.00036627377,0.00068379426,0.00025954252,0.00043553882,0.00023489897],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00006682626,0.00003109299,0.0015123931,0.000075791264,0.000037360474,0.00038803145,0.00006445352,0.98910064,0.0045055747,0.00231926,0.0005347725,0.0013639104],"study_design_scores_gemma":[0.000012196696,0.000026873719,0.0002660455,0.0000055217724,0.000010956197,0.000026655052,0.000019614843,0.99814963,0.00090839603,0.0002128691,0.00035607512,0.00000518773],"about_ca_topic_score_codex":0.013188336,"about_ca_topic_score_gemma":0.009623171,"teacher_disagreement_score":0.013188336,"about_ca_system_score_codex":0.0009469219,"about_ca_system_score_gemma":0.0008440932,"threshold_uncertainty_score":0.026223123},"labels":[],"label_agreement":null},{"id":"W3217347057","doi":"10.1109/ted.2021.3124475","title":"Simulation of Negative Capacitance Based on the Miller Model: Beyond the Limitation of the Landau Model","year":2021,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Ferroelectric and Negative Capacitance Devices","field":"Engineering","cited_by":11,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Natural Sciences and Engineering Research Council of Canada; Canada First Research Excellence Fund; Compute Canada","keywords":"Capacitor; Ferroelectricity; Capacitance; Dielectric; Polarization (electrochemistry); Electric field; Physics; Condensed matter physics; Materials science; Mathematical physics; Topology (electrical circuits); Voltage; Mathematics; Quantum mechanics; Chemistry; Electrode; Combinatorics; Physical chemistry","score_opus":0.018658691889598282,"score_gpt":0.22835332759447696,"score_spread":0.20969463570487867,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3217347057","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9281359,0.00015458642,0.053503618,0.00054795685,0.00007147141,0.00004410905,0.00021789267,0.00041206495,0.016912322],"genre_scores_gemma":[0.99228114,0.000046056186,0.006494106,0.00005587066,0.000007356652,0.000029173283,0.000049561906,0.000031261792,0.0010054575],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99991155,0.000019378584,0.000003484868,0.000011743151,0.00003378747,0.00002019309],"domain_scores_gemma":[0.99976593,0.00012380947,0.000022512444,0.000032598975,0.000036988757,0.000018222303],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00020585308,0.00021856421,0.000313128,0.00021275424,0.00028008144,0.0003856075,0.00069319905,0.000823912,0.0014652956],"category_scores_gemma":[0.0008639074,0.00011965744,0.00024156444,0.00024461406,0.0004321045,0.00062324246,0.00025940224,0.00034424764,0.000104414066],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00010115314,0.000103113496,0.0019850708,0.00007024068,0.000028463422,0.00035431664,0.00016478323,0.941859,0.024098137,0.025708074,0.00094868126,0.004579023],"study_design_scores_gemma":[0.000007987615,0.000013469355,0.00014294343,0.0000018832902,0.0000021212904,0.000012756592,0.0000089539935,0.99684095,0.0016690885,0.0010510553,0.00024500108,0.0000037497514],"about_ca_topic_score_codex":0.0038319211,"about_ca_topic_score_gemma":0.0024160887,"teacher_disagreement_score":0.0038319211,"about_ca_system_score_codex":0.00042646308,"about_ca_system_score_gemma":0.0005402865,"threshold_uncertainty_score":0.0076192617},"labels":[],"label_agreement":null},{"id":"W4210250784","doi":"10.1109/ted.2022.3144122","title":"Multiport Relativistic Magnetron for Phased Array Application","year":2022,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Gyrotron and Vacuum Electronics Research","field":"Physics and Astronomy","cited_by":8,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Calgary","funders":"National Natural Science Foundation of China","keywords":"Phase shift module; Physics; Phased array; Electrical engineering; Power (physics); Phase (matter); Microwave; Electronic engineering; Amplitude; Engineering; Topology (electrical circuits); Antenna (radio); Optics","score_opus":0.01511151765416053,"score_gpt":0.30253795815131274,"score_spread":0.2874264404971522,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4210250784","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.5767801,0.0047575617,0.3558238,0.00097238657,0.0005948311,0.00022826083,0.000326986,0.0022077945,0.05830835],"genre_scores_gemma":[0.8828192,0.0006447761,0.10969212,0.000109512715,0.00005068897,0.0000683818,0.00013393948,0.00007617397,0.0064051636],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998621,0.000028382367,0.000006172157,0.000027568434,0.00005441087,0.0000214348],"domain_scores_gemma":[0.9999069,0.00001718045,0.000021521464,0.00002112365,0.000023787108,0.000009389353],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00019897812,0.0002676004,0.00026381368,0.00015834862,0.0001562576,0.00038940206,0.00041011776,0.00032468865,0.0024467385],"category_scores_gemma":[0.00020453519,0.00013694962,0.0002448077,0.00030264806,0.00014941025,0.0004888836,0.00030841248,0.0002682958,0.00062738743],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00025380176,0.00005230967,0.00095895113,0.000411646,0.000034306497,0.0003117638,0.00013543274,0.0037095747,0.9391699,0.01654661,0.0021762017,0.036239486],"study_design_scores_gemma":[0.000049076105,0.0010558815,0.0019207268,0.000025171526,0.00004744247,0.0011971233,0.00007507215,0.043793067,0.87896085,0.0014642788,0.07137385,0.0000374199],"about_ca_topic_score_codex":0.00011060021,"about_ca_topic_score_gemma":0.00021910045,"teacher_disagreement_score":0.0024467385,"about_ca_system_score_codex":0.00022606441,"about_ca_system_score_gemma":0.00016001977,"threshold_uncertainty_score":0.008185148},"labels":[],"label_agreement":null},{"id":"W4221154635","doi":"10.1109/ted.2023.3244133","title":"Memristor-Based Cryogenic Programmable DC Sources for Scalable In Situ Quantum-Dot Control","year":2023,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Advanced Memory and Neural Computing","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Institut interdisciplinaire d'innovation technologique; Université de Sherbrooke","funders":"Fonds de recherche du Québec – Nature et technologies; École Centrale de Lyon; Institut National des Sciences Appliquées de Lyon; Canada First Research Excellence Fund; Natural Science Foundation of Beijing Municipality; Centre National de la Recherche Scientifique; Natural Sciences and Engineering Research Council of Canada; Université de Sherbrooke; Indian National Science Academy","keywords":"Memristor; Quantum dot; Cryostat; Optoelectronics; Computer science; Scalability; Voltage; Biasing; Physics; Electrical engineering; Materials science; Nanotechnology; Electronic engineering; Engineering; Superconductivity; Condensed matter physics","score_opus":0.016095747478171957,"score_gpt":0.2528493248458857,"score_spread":0.2367535773677137,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4221154635","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.875821,0.00063421443,0.1138955,0.00044051599,0.00009964219,0.000053400632,0.00022704892,0.00083274813,0.007995995],"genre_scores_gemma":[0.98526275,0.00013854576,0.013674035,0.000026648924,0.0000060983098,0.000030509846,0.000037121186,0.000038158152,0.0007861636],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999683,0.0000037109194,0.0000012910876,0.0000063079374,0.000015445794,0.0000049174073],"domain_scores_gemma":[0.99994004,0.00001923403,0.000010818338,0.000012569122,0.000011699387,0.0000056054027],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00008958951,0.00012887274,0.00013436428,0.00005863145,0.00014065248,0.00021235923,0.00045754111,0.00019322884,0.0013961982],"category_scores_gemma":[0.0002231394,0.000092561364,0.00010095053,0.00008635986,0.00020995396,0.00032780485,0.00021666281,0.00029533557,0.00018069665],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00012707402,0.00007177799,0.0007288178,0.00017006329,0.000020446078,0.00011199792,0.00009804519,0.049342606,0.92921937,0.0100513715,0.0008283272,0.009230121],"study_design_scores_gemma":[0.00004061782,0.00017508108,0.0007554286,0.000016502925,0.000014532385,0.00006555355,0.000033077835,0.45846936,0.53219706,0.0017719457,0.0064435247,0.000017347747],"about_ca_topic_score_codex":0.0006101854,"about_ca_topic_score_gemma":0.00082249293,"teacher_disagreement_score":0.0013961982,"about_ca_system_score_codex":0.00036996737,"about_ca_system_score_gemma":0.00019518034,"threshold_uncertainty_score":0.004670799},"labels":[],"label_agreement":null},{"id":"W4226377161","doi":"10.1109/ted.2022.3157569","title":"p-GaN Gate HEMTs With 10.6 V Maximum Gate Drive Voltages by Mg Doping Engineering","year":2022,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":34,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of British Columbia","funders":"Shenzhen Municipal Science and Technology Innovation Council; Guangdong Science and Technology Department","keywords":"Materials science; Optoelectronics; Breakdown voltage; Gallium nitride; Metalorganic vapour phase epitaxy; High-electron-mobility transistor; Time-dependent gate oxide breakdown; Doping; Schottky barrier; Threshold voltage; Gate oxide; Metal gate; Schottky diode; Chemical vapor deposition; Voltage; Electrical engineering; Transistor; Layer (electronics); Nanotechnology; Diode","score_opus":0.005658677762146294,"score_gpt":0.2076509634686049,"score_spread":0.2019922857064586,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4226377161","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9893293,0.00046696467,0.005571195,0.00012040874,0.000030541574,0.000017188158,0.00017678629,0.00031157187,0.0039760405],"genre_scores_gemma":[0.99302,0.00019839978,0.005106215,0.000032995405,0.0000147016635,0.000020411453,0.000116583506,0.000034253368,0.0014563596],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999424,0.0000032845426,0.0000026552837,0.0000141354485,0.000023094719,0.000014355476],"domain_scores_gemma":[0.99995816,0.000005116975,0.000013168659,0.0000053516105,0.000009811058,0.000008470858],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00005032336,0.0002670677,0.00018491833,0.000099812416,0.00011743736,0.0002573723,0.00041809442,0.000277281,0.0006881131],"category_scores_gemma":[0.00008194714,0.00010288184,0.0001481218,0.00013167408,0.00012690428,0.00027860623,0.00019799023,0.0002746099,0.00040103635],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00003039402,0.000013157504,0.0002502607,0.000024252964,0.000005326516,0.00009569025,0.000012891921,0.00026393277,0.9963366,0.00014318334,0.00017355513,0.0026507431],"study_design_scores_gemma":[0.000015305182,0.00028002725,0.0026538488,0.000005149674,0.000012235928,0.00033178192,0.000014008641,0.004191269,0.9900283,0.00016635141,0.0022960217,0.000005683055],"about_ca_topic_score_codex":0.0003734026,"about_ca_topic_score_gemma":0.0008171947,"teacher_disagreement_score":0.0006881131,"about_ca_system_score_codex":0.00025036477,"about_ca_system_score_gemma":0.00009424201,"threshold_uncertainty_score":0.0023019314},"labels":[],"label_agreement":null},{"id":"W4235915783","doi":"10.1109/ted.2014.2349674","title":"IEEE Transactions on Electron Devices publication information","year":2014,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Advanced Semiconductor Detectors and Materials","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Canadian Standards Association","funders":"","keywords":"Computer science; Electron; Optoelectronics; Electrical engineering; Materials science; Physics; Engineering; Nuclear physics","score_opus":0.007932666103285978,"score_gpt":0.22390162824741944,"score_spread":0.21596896214413347,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4235915783","genre_codex":"other","genre_gemma":"other","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"other","genre_consensus":"other","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.014062826,0.031609435,0.040305078,0.014002144,0.08514561,0.0005925941,0.014410775,0.00302622,0.7968453],"genre_scores_gemma":[0.023596063,0.015744288,0.006044131,0.0014195022,0.003092422,0.00013376429,0.011659827,0.0005058616,0.937804],"study_design_codex":"not_applicable","study_design_gemma":"not_applicable","domain_scores_codex":[0.99958605,0.000024491559,0.00002775289,0.000050213464,0.00025786384,0.00005360285],"domain_scores_gemma":[0.9993622,0.00009145142,0.000027871216,0.00011922895,0.0003281698,0.000071106646],"candidate_categories":["insufficient_payload"],"consensus_categories":[],"category_scores_codex":[0.00066166586,0.00078501704,0.00092268514,0.001991482,0.0007620233,0.0020651831,0.0011520106,0.0021385755,0.35349795],"category_scores_gemma":[0.0010477672,0.0004086272,0.0005234081,0.0016606238,0.0002558371,0.0021578039,0.00090246124,0.0012109494,0.15772809],"study_design_candidate":"not_applicable","study_design_consensus":"not_applicable","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00020530201,0.00021672471,0.0004133612,0.0007759464,0.000026276051,0.00015528269,0.000034696663,0.000781172,0.013343098,0.012789644,0.7219066,0.24935196],"study_design_scores_gemma":[0.000021630425,0.000082788625,0.0011968416,0.00019952944,0.000025488669,0.00029105684,0.000034594872,0.002225884,0.0076470277,0.0046630027,0.983584,0.000028318971],"about_ca_topic_score_codex":0.0005363357,"about_ca_topic_score_gemma":0.0016540902,"teacher_disagreement_score":0.35349795,"about_ca_system_score_codex":0.0005480084,"about_ca_system_score_gemma":0.0007387671,"threshold_uncertainty_score":0.9221567},"labels":[],"label_agreement":null},{"id":"W4240571505","doi":"10.1109/ted.2014.2312678","title":"IEEE Transactions on Electron Devices publication information","year":2014,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Advanced Semiconductor Detectors and Materials","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Canadian Standards Association","funders":"","keywords":"Computer science; Electron; Optoelectronics; Electrical engineering; World Wide Web; Materials science; Physics; Engineering; Nuclear physics","score_opus":0.007932666103285978,"score_gpt":0.22390162824741944,"score_spread":0.21596896214413347,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4240571505","genre_codex":"other","genre_gemma":"other","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"other","genre_consensus":"other","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.014062826,0.031609435,0.040305078,0.014002144,0.08514561,0.0005925941,0.014410775,0.00302622,0.7968453],"genre_scores_gemma":[0.023596063,0.015744288,0.006044131,0.0014195022,0.003092422,0.00013376429,0.011659827,0.0005058616,0.937804],"study_design_codex":"not_applicable","study_design_gemma":"not_applicable","domain_scores_codex":[0.99958605,0.000024491559,0.00002775289,0.000050213464,0.00025786384,0.00005360285],"domain_scores_gemma":[0.9993622,0.00009145142,0.000027871216,0.00011922895,0.0003281698,0.000071106646],"candidate_categories":["insufficient_payload"],"consensus_categories":[],"category_scores_codex":[0.00066166586,0.00078501704,0.00092268514,0.001991482,0.0007620233,0.0020651831,0.0011520106,0.0021385755,0.35349795],"category_scores_gemma":[0.0010477672,0.0004086272,0.0005234081,0.0016606238,0.0002558371,0.0021578039,0.00090246124,0.0012109494,0.15772809],"study_design_candidate":"not_applicable","study_design_consensus":"not_applicable","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00020530201,0.00021672471,0.0004133612,0.0007759464,0.000026276051,0.00015528269,0.000034696663,0.000781172,0.013343098,0.012789644,0.7219066,0.24935196],"study_design_scores_gemma":[0.000021630425,0.000082788625,0.0011968416,0.00019952944,0.000025488669,0.00029105684,0.000034594872,0.002225884,0.0076470277,0.0046630027,0.983584,0.000028318971],"about_ca_topic_score_codex":0.0005363357,"about_ca_topic_score_gemma":0.0016540902,"teacher_disagreement_score":0.35349795,"about_ca_system_score_codex":0.0005480084,"about_ca_system_score_gemma":0.0007387671,"threshold_uncertainty_score":0.9221567},"labels":[],"label_agreement":null},{"id":"W4243889160","doi":"10.1109/ted.2014.2340637","title":"IEEE Transactions on Electron Devices publication information","year":2014,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Advanced Semiconductor Detectors and Materials","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Canadian Standards Association","funders":"","keywords":"Computer science; World Wide Web; Electrical engineering; Optoelectronics; Materials science; Engineering","score_opus":0.007932666103285978,"score_gpt":0.22390162824741944,"score_spread":0.21596896214413347,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4243889160","genre_codex":"other","genre_gemma":"other","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"other","genre_consensus":"other","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.014062826,0.031609435,0.040305078,0.014002144,0.08514561,0.0005925941,0.014410775,0.00302622,0.7968453],"genre_scores_gemma":[0.023596063,0.015744288,0.006044131,0.0014195022,0.003092422,0.00013376429,0.011659827,0.0005058616,0.937804],"study_design_codex":"not_applicable","study_design_gemma":"not_applicable","domain_scores_codex":[0.99958605,0.000024491559,0.00002775289,0.000050213464,0.00025786384,0.00005360285],"domain_scores_gemma":[0.9993622,0.00009145142,0.000027871216,0.00011922895,0.0003281698,0.000071106646],"candidate_categories":["insufficient_payload"],"consensus_categories":[],"category_scores_codex":[0.00066166586,0.00078501704,0.00092268514,0.001991482,0.0007620233,0.0020651831,0.0011520106,0.0021385755,0.35349795],"category_scores_gemma":[0.0010477672,0.0004086272,0.0005234081,0.0016606238,0.0002558371,0.0021578039,0.00090246124,0.0012109494,0.15772809],"study_design_candidate":"not_applicable","study_design_consensus":"not_applicable","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00020530201,0.00021672471,0.0004133612,0.0007759464,0.000026276051,0.00015528269,0.000034696663,0.000781172,0.013343098,0.012789644,0.7219066,0.24935196],"study_design_scores_gemma":[0.000021630425,0.000082788625,0.0011968416,0.00019952944,0.000025488669,0.00029105684,0.000034594872,0.002225884,0.0076470277,0.0046630027,0.983584,0.000028318971],"about_ca_topic_score_codex":0.0005363357,"about_ca_topic_score_gemma":0.0016540902,"teacher_disagreement_score":0.35349795,"about_ca_system_score_codex":0.0005480084,"about_ca_system_score_gemma":0.0007387671,"threshold_uncertainty_score":0.9221567},"labels":[],"label_agreement":null},{"id":"W4247084630","doi":"10.1109/ted.2011.2149530","title":"RF Performance Potential of Array-Based Carbon-Nanotube Transistors—Part II: Extrinsic Results","year":2011,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Carbon Nanotubes in Composites","field":"Materials Science","cited_by":16,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Alberta","funders":"","keywords":"Transistor; CMOS; Benchmark (surveying); Figure of merit; Radio frequency; Electrical engineering; Field-effect transistor; Power (physics); Computer science; Materials science; Physics; Optoelectronics; Engineering; Quantum mechanics","score_opus":0.016865342653280047,"score_gpt":0.22059167976242391,"score_spread":0.20372633710914387,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4247084630","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.92660284,0.0031794868,0.02708462,0.0006266288,0.0000799013,0.00006125462,0.00044124995,0.00030286174,0.04162117],"genre_scores_gemma":[0.98890287,0.00086514326,0.0057221316,0.00006718067,0.000047973866,0.000024864103,0.00025876297,0.00006252833,0.0040485547],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99966514,0.00004324112,0.00001983126,0.00007397418,0.00014543819,0.000052454652],"domain_scores_gemma":[0.99963427,0.00013306577,0.00004027467,0.00004555487,0.00012712552,0.000019635774],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00041693225,0.00037555708,0.00026888325,0.00026525685,0.00032685586,0.00069943414,0.0004158415,0.00053838524,0.0021057883],"category_scores_gemma":[0.0011814699,0.00008143355,0.0002519351,0.00025990058,0.00027992125,0.0013363017,0.00039908526,0.00030901728,0.00070720515],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0004139038,0.00007739474,0.0033781412,0.00044241644,0.000052763728,0.000429733,0.0002511912,0.018228477,0.9294441,0.01135105,0.0012759207,0.034654967],"study_design_scores_gemma":[0.000018950264,0.0012286383,0.0046519255,0.00005849904,0.00008193547,0.0006547019,0.0001281737,0.0625638,0.9161055,0.0016726748,0.012788544,0.000046574518],"about_ca_topic_score_codex":0.0004351081,"about_ca_topic_score_gemma":0.00070129934,"teacher_disagreement_score":0.0021057883,"about_ca_system_score_codex":0.00045948545,"about_ca_system_score_gemma":0.00015111799,"threshold_uncertainty_score":0.0070446134},"labels":[],"label_agreement":null},{"id":"W4250059894","doi":"10.1109/ted.2014.2323832","title":"IEEE Transactions on Electron Devices publication information","year":2014,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Advanced Semiconductor Detectors and Materials","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Canadian Standards Association","funders":"","keywords":"Computer science; Electrical engineering; Optoelectronics; World Wide Web; Materials science; Engineering","score_opus":0.007932666103285978,"score_gpt":0.22390162824741944,"score_spread":0.21596896214413347,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4250059894","genre_codex":"other","genre_gemma":"other","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"other","genre_consensus":"other","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.014062826,0.031609435,0.040305078,0.014002144,0.08514561,0.0005925941,0.014410775,0.00302622,0.7968453],"genre_scores_gemma":[0.023596063,0.015744288,0.006044131,0.0014195022,0.003092422,0.00013376429,0.011659827,0.0005058616,0.937804],"study_design_codex":"not_applicable","study_design_gemma":"not_applicable","domain_scores_codex":[0.99958605,0.000024491559,0.00002775289,0.000050213464,0.00025786384,0.00005360285],"domain_scores_gemma":[0.9993622,0.00009145142,0.000027871216,0.00011922895,0.0003281698,0.000071106646],"candidate_categories":["insufficient_payload"],"consensus_categories":["insufficient_payload"],"category_scores_codex":[0.00066166586,0.00078501704,0.00092268514,0.001991482,0.0007620233,0.0020651831,0.0011520106,0.0021385755,0.35349795],"category_scores_gemma":[0.0010477672,0.0004086272,0.0005234081,0.0016606238,0.0002558371,0.0021578039,0.00090246124,0.0012109494,0.15772809],"study_design_candidate":"not_applicable","study_design_consensus":"not_applicable","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00020530201,0.00021672471,0.0004133612,0.0007759464,0.000026276051,0.00015528269,0.000034696663,0.000781172,0.013343098,0.012789644,0.7219066,0.24935196],"study_design_scores_gemma":[0.000021630425,0.000082788625,0.0011968416,0.00019952944,0.000025488669,0.00029105684,0.000034594872,0.002225884,0.0076470277,0.0046630027,0.983584,0.000028318971],"about_ca_topic_score_codex":0.0005363357,"about_ca_topic_score_gemma":0.0016540902,"teacher_disagreement_score":0.646502,"about_ca_system_score_codex":0.0005480084,"about_ca_system_score_gemma":0.0007387671,"threshold_uncertainty_score":0.9221567},"labels":[],"label_agreement":null},{"id":"W4251162858","doi":"10.1109/ted.2014.2318245","title":"IEEE Transactions on Electron Devices publication information","year":2014,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Advanced Semiconductor Detectors and Materials","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Canadian Standards Association","funders":"","keywords":"Computer science; Electron; Materials science; Optoelectronics; Electrical engineering; World Wide Web; Physics; Engineering; Nuclear physics","score_opus":0.007932666103285978,"score_gpt":0.22390162824741944,"score_spread":0.21596896214413347,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4251162858","genre_codex":"other","genre_gemma":"other","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"other","genre_consensus":"other","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.014062826,0.031609435,0.040305078,0.014002144,0.08514561,0.0005925941,0.014410775,0.00302622,0.7968453],"genre_scores_gemma":[0.023596063,0.015744288,0.006044131,0.0014195022,0.003092422,0.00013376429,0.011659827,0.0005058616,0.937804],"study_design_codex":"not_applicable","study_design_gemma":"not_applicable","domain_scores_codex":[0.99958605,0.000024491559,0.00002775289,0.000050213464,0.00025786384,0.00005360285],"domain_scores_gemma":[0.9993622,0.00009145142,0.000027871216,0.00011922895,0.0003281698,0.000071106646],"candidate_categories":["insufficient_payload"],"consensus_categories":["insufficient_payload"],"category_scores_codex":[0.00066166586,0.00078501704,0.00092268514,0.001991482,0.0007620233,0.0020651831,0.0011520106,0.0021385755,0.35349795],"category_scores_gemma":[0.0010477672,0.0004086272,0.0005234081,0.0016606238,0.0002558371,0.0021578039,0.00090246124,0.0012109494,0.15772809],"study_design_candidate":"not_applicable","study_design_consensus":"not_applicable","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00020530201,0.00021672471,0.0004133612,0.0007759464,0.000026276051,0.00015528269,0.000034696663,0.000781172,0.013343098,0.012789644,0.7219066,0.24935196],"study_design_scores_gemma":[0.000021630425,0.000082788625,0.0011968416,0.00019952944,0.000025488669,0.00029105684,0.000034594872,0.002225884,0.0076470277,0.0046630027,0.983584,0.000028318971],"about_ca_topic_score_codex":0.0005363357,"about_ca_topic_score_gemma":0.0016540902,"teacher_disagreement_score":0.646502,"about_ca_system_score_codex":0.0005480084,"about_ca_system_score_gemma":0.0007387671,"threshold_uncertainty_score":0.9221567},"labels":[],"label_agreement":null},{"id":"W4285506404","doi":"10.1109/ted.2022.3187374","title":"Potential Enhancement of <i>f<sub>T</sub> </i> and <i>gₘf<sub>T</sub> </i>/<i>I<sub>D</sub> </i> via the Use of NCFETs to Mitigate the Impact of Extrinsic Parasitics","year":2022,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Ferroelectric and Negative Capacitance Devices","field":"Engineering","cited_by":3,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Alberta","funders":"Natural Sciences and Engineering Research Council of Canada; Alberta Innovates","keywords":"Notation; Mathematics; Discrete mathematics; Algebra over a field; Arithmetic; Pure mathematics","score_opus":0.011522954887317369,"score_gpt":0.22084720473346606,"score_spread":0.2093242498461487,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4285506404","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.7331842,0.0047825435,0.120945126,0.0022022168,0.00055985735,0.00018822175,0.0013506846,0.0032254164,0.1335616],"genre_scores_gemma":[0.97087294,0.001156106,0.018593043,0.00019347886,0.00007446907,0.000053443062,0.00032968316,0.00015775539,0.008569021],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99990165,0.000005971729,0.0000047988124,0.000025705664,0.000038146874,0.000023742426],"domain_scores_gemma":[0.99958426,0.00012346842,0.00007756267,0.000040968658,0.00013591243,0.000037811846],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00021063648,0.0005681046,0.00028818302,0.0002929092,0.00031072393,0.00081512437,0.0008404652,0.0006533064,0.0046125813],"category_scores_gemma":[0.00089554436,0.00012796254,0.00022567202,0.0003383971,0.0003432095,0.0012087673,0.00032753526,0.00051285274,0.0017737699],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00032362473,0.00007307543,0.0012266395,0.0002661562,0.000020101705,0.00046419504,0.00031891442,0.0027156319,0.9508139,0.01427546,0.0034149785,0.026087316],"study_design_scores_gemma":[0.000025924342,0.00030238426,0.0022458718,0.00005804344,0.00005501982,0.0009778574,0.00021116069,0.023885634,0.9471255,0.0023780784,0.022702346,0.00003226312],"about_ca_topic_score_codex":0.0017535092,"about_ca_topic_score_gemma":0.0028861389,"teacher_disagreement_score":0.0046125813,"about_ca_system_score_codex":0.0009666875,"about_ca_system_score_gemma":0.00048392703,"threshold_uncertainty_score":0.015430689},"labels":[],"label_agreement":null},{"id":"W4286371761","doi":"10.1109/ted.2022.3190464","title":"Extended Scale Length Theory for Low-Dimensional Field-Effect Transistors","year":2022,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Semiconductor materials and devices","field":"Engineering","cited_by":16,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"National Institute for Nanotechnology; University of Waterloo","funders":"Natural Sciences and Engineering Research Council of Canada; Defense Advanced Research Projects Agency; Advanced Research Projects Agency; National Science Foundation; Stanford SystemX Alliance; Compute Canada; U.S. Department of Energy","keywords":"Field-effect transistor; Length scale; Transistor; Channel (broadcasting); MOSFET; Materials science; Optoelectronics; Electronic engineering; Nanotechnology; Topology (electrical circuits); Mathematics; Electrical engineering; Physics; Engineering; Quantum mechanics","score_opus":0.005504355531876211,"score_gpt":0.21926677068817477,"score_spread":0.21376241515629857,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4286371761","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.021036947,0.007139647,0.9396896,0.00075850135,0.000501693,0.00008664406,0.00026714784,0.0007040106,0.029815793],"genre_scores_gemma":[0.6263963,0.014760246,0.31990004,0.0016422032,0.00147929,0.0009268189,0.0008052984,0.0011642943,0.032925524],"study_design_codex":"theoretical_or_conceptual","study_design_gemma":"theoretical_or_conceptual","domain_scores_codex":[0.99965763,0.00009021124,0.00001663855,0.00004925874,0.00015484002,0.000031408224],"domain_scores_gemma":[0.99942905,0.00028407233,0.00005471902,0.000100827274,0.00009763441,0.000033819124],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0007017874,0.00081714324,0.0006953083,0.00088374864,0.00046952986,0.0010576299,0.0013976942,0.0011960035,0.003154083],"category_scores_gemma":[0.0020683135,0.0003342553,0.0010365606,0.00060956896,0.0011655466,0.002221528,0.00089866226,0.0015382869,0.0015449455],"study_design_candidate":"theoretical_or_conceptual","study_design_consensus":"theoretical_or_conceptual","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000024942508,0.000032506105,0.00027104947,0.00020179756,0.000031935015,0.00021682178,0.00012607941,0.106976904,0.011972165,0.86074036,0.0035085443,0.015896779],"study_design_scores_gemma":[0.000010045961,0.000023885346,0.00019606402,0.00003185425,0.000008091525,0.00009524591,0.000013584369,0.7324241,0.0012071859,0.25854132,0.007419096,0.00002960824],"about_ca_topic_score_codex":0.0012863784,"about_ca_topic_score_gemma":0.00096672575,"teacher_disagreement_score":0.003154083,"about_ca_system_score_codex":0.0013402195,"about_ca_system_score_gemma":0.00057873013,"threshold_uncertainty_score":0.010551393},"labels":[],"label_agreement":null},{"id":"W4287855062","doi":"10.1109/ted.2022.3192509","title":"A Novel 4H-SiC JBS-Integrated MOSFET With Self-Pinching Structure for Improved Short-Circuit Capability","year":2022,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Silicon Carbide Semiconductor Technologies","field":"Engineering","cited_by":21,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Simon Fraser University","funders":"Key Research and Development Program of Hunan Province of China","keywords":"JFET; Schottky diode; Materials science; Electric field; Optoelectronics; Schottky barrier; MOSFET; Electrical engineering; Diode; Topology (electrical circuits); Saturation current; Field-effect transistor; Physics; Engineering; Voltage","score_opus":0.011178502775008911,"score_gpt":0.21672805973045667,"score_spread":0.20554955695544774,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4287855062","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9627067,0.0010015524,0.02772626,0.00010089,0.0001437751,0.000049470134,0.00020322077,0.00041159452,0.0076565687],"genre_scores_gemma":[0.98704404,0.00015736946,0.011124924,0.000024706826,0.000017831537,0.000016476604,0.000075759715,0.000010831817,0.0015280477],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999484,0.0000028733418,0.000002377341,0.000010630632,0.00002467094,0.000010999624],"domain_scores_gemma":[0.9999547,0.0000040140403,0.000009914704,0.000005633809,0.000014594465,0.000011196113],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00005662496,0.00017889572,0.0002516823,0.00013510764,0.0001379916,0.00025852278,0.000596588,0.00030037886,0.0007102445],"category_scores_gemma":[0.00008553667,0.000111612,0.00024176078,0.00016294961,0.00011586055,0.0003002274,0.00017733379,0.00013131235,0.0001968741],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00013632889,0.00006424545,0.0013839583,0.00013261774,0.000037833197,0.00034931293,0.000037339905,0.00605516,0.97758806,0.0021422608,0.0008162629,0.011256621],"study_design_scores_gemma":[0.00022888092,0.002326473,0.017215168,0.00003759841,0.00021577315,0.0018068749,0.00009406163,0.28472474,0.67459035,0.0015211885,0.01717059,0.00006835413],"about_ca_topic_score_codex":0.0005368533,"about_ca_topic_score_gemma":0.0013234843,"teacher_disagreement_score":0.0007102445,"about_ca_system_score_codex":0.00025806177,"about_ca_system_score_gemma":0.00023257747,"threshold_uncertainty_score":0.00237602},"labels":[],"label_agreement":null},{"id":"W4292258590","doi":"10.1109/ted.2022.3197384","title":"Extended <i>RC</i> Impedance and Relaxation Models for Dissipative Electrochemical Capacitors","year":2022,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Fractional Differential Equations Solutions","field":"Mathematics","cited_by":14,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Calgary","funders":"","keywords":"Capacitor; Dissipative system; Resistive touchscreen; Capacitive sensing; Dissipation; Electrical impedance; Supercapacitor; Relaxation (psychology); Time domain; Voltage; Electrical engineering; Materials science; Computer science; Physics; Electronic engineering; Capacitance; Engineering; Electrode; Thermodynamics","score_opus":0.0351338676323578,"score_gpt":0.3053910629334031,"score_spread":0.2702571953010453,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4292258590","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.024106653,0.0059749996,0.91788864,0.0015164564,0.0003778068,0.00008498379,0.000452787,0.00046773066,0.049129933],"genre_scores_gemma":[0.8312584,0.010589031,0.085128926,0.0012556013,0.0007844889,0.00034685954,0.00073302654,0.00044791965,0.06945567],"study_design_codex":"theoretical_or_conceptual","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9997099,0.00006840861,0.00001760726,0.00006333995,0.000086236025,0.000054451433],"domain_scores_gemma":[0.99956733,0.0001480442,0.00008578564,0.00006987546,0.000099074285,0.000029927045],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0005314747,0.0013030923,0.000874399,0.0011043451,0.00048987067,0.0014756303,0.0024878795,0.0020621675,0.0049621207],"category_scores_gemma":[0.001995735,0.00035565335,0.001409657,0.0011077088,0.0009602252,0.002843425,0.0007716505,0.0017228189,0.0014933442],"study_design_candidate":"simulation_or_modeling","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00006491979,0.00009039709,0.0004430723,0.0003491427,0.00004496549,0.0005257636,0.0004736378,0.27453184,0.013592845,0.6852695,0.0061996127,0.018414231],"study_design_scores_gemma":[0.0000062201843,0.000016132915,0.00013387654,0.00002230999,0.000014130226,0.00010705089,0.000034896217,0.93313426,0.0009459027,0.059767928,0.0057936683,0.000023655191],"about_ca_topic_score_codex":0.0032612279,"about_ca_topic_score_gemma":0.0017237229,"teacher_disagreement_score":0.0049621207,"about_ca_system_score_codex":0.0012607866,"about_ca_system_score_gemma":0.0005644463,"threshold_uncertainty_score":0.016599953},"labels":[],"label_agreement":null},{"id":"W4292968916","doi":"10.1109/ted.2022.3197387","title":"A Computational Framework for Gradually Switching Ferroelectric-Based Negative Capacitance Field-Effect Transistors","year":2022,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Ferroelectric and Negative Capacitance Devices","field":"Engineering","cited_by":4,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Natural Sciences and Engineering Research Council of Canada; Canada First Research Excellence Fund","keywords":"Ferroelectricity; Polarization (electrochemistry); Capacitor; Dielectric; Capacitance; Materials science; Physics; Condensed matter physics; Electrical engineering; Quantum mechanics; Voltage; Chemistry; Physical chemistry; Electrode; Engineering","score_opus":0.010503322929891376,"score_gpt":0.24344949565216076,"score_spread":0.2329461727222694,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4292968916","genre_codex":"methods","genre_gemma":"methods","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"methods","genre_consensus":"methods","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.19770624,0.0009390579,0.76595354,0.0018258203,0.00019714476,0.00026298268,0.0005942666,0.0005343661,0.03198666],"genre_scores_gemma":[0.6914283,0.0005656878,0.29701573,0.0004017533,0.000096028896,0.0010860894,0.0005125198,0.00021186148,0.00868204],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9998747,0.000046072128,0.0000048677484,0.000016105132,0.000036022127,0.000022200444],"domain_scores_gemma":[0.9996977,0.00018702187,0.000017377008,0.00002047551,0.000043034357,0.000034453795],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00057217694,0.00045360817,0.0007386587,0.00034121712,0.000777306,0.0007793003,0.0019381553,0.0014098951,0.0030578806],"category_scores_gemma":[0.0013612184,0.0003438049,0.0007619718,0.0003296215,0.0008138414,0.0007496304,0.00094907644,0.00090513425,0.00028387606],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000023995868,0.000041682328,0.00022590574,0.00003277742,0.000009274702,0.00005410235,0.00002876927,0.96146023,0.00095147744,0.03419088,0.00047686367,0.002504127],"study_design_scores_gemma":[0.000008104074,0.0000043973982,0.000014748663,0.0000018270993,0.000001285656,0.0000026410612,0.000004003564,0.9972972,0.000055559627,0.002387697,0.00022077418,0.0000017362509],"about_ca_topic_score_codex":0.009189091,"about_ca_topic_score_gemma":0.009537618,"teacher_disagreement_score":0.009189091,"about_ca_system_score_codex":0.0009020125,"about_ca_system_score_gemma":0.0015802605,"threshold_uncertainty_score":0.018271208},"labels":[],"label_agreement":null},{"id":"W4308471070","doi":"10.1109/ted.2022.3208218","title":"Modeling and Analysis of SiC GTO Thyristor’s Dynamic Turn-On Transient","year":2022,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Silicon Carbide Semiconductor Technologies","field":"Engineering","cited_by":7,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Simon Fraser University","funders":"","keywords":"Thyristor; Gate turn-off thyristor; Transient (computer programming); MOS-controlled thyristor; Integrated gate-commutated thyristor; Silicon carbide; Static induction thyristor; Turn (biochemistry); Materials science; Electronic engineering; Electrical engineering; Computer science; Engineering; Voltage; Physics; Transistor","score_opus":0.009329512576679147,"score_gpt":0.22660442406844586,"score_spread":0.2172749114917667,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4308471070","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.17046462,0.002741395,0.7604653,0.0006824601,0.0002059284,0.00016673729,0.00038607127,0.0010829866,0.063804366],"genre_scores_gemma":[0.9862134,0.0008665291,0.0059894747,0.0000428598,0.000023060835,0.00006315052,0.0000776099,0.00005133312,0.006672623],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99989104,0.00001279826,0.0000046260193,0.000018828574,0.0000518789,0.000020762614],"domain_scores_gemma":[0.99990964,0.000029864352,0.000016171274,0.000012128357,0.000025369149,0.0000067635287],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0001629249,0.00036205002,0.000401201,0.00039167513,0.00032634148,0.00055329973,0.0008365167,0.00072456436,0.0015012852],"category_scores_gemma":[0.00036980445,0.00023549347,0.0006255428,0.00029754883,0.00045435815,0.0006742763,0.00024973348,0.00046294654,0.00029733303],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000071581926,0.000029010469,0.00079010136,0.0001509709,0.000026306185,0.00036225087,0.0001744928,0.9343572,0.03184022,0.021264154,0.00084771524,0.010085963],"study_design_scores_gemma":[0.0000016841599,0.000009047607,0.00013037311,0.0000042331944,0.0000029063426,0.00002799133,0.000008526394,0.99760747,0.001038102,0.0006970461,0.00046950346,0.0000030114613],"about_ca_topic_score_codex":0.0046242434,"about_ca_topic_score_gemma":0.0024350805,"teacher_disagreement_score":0.0046242434,"about_ca_system_score_codex":0.0007315567,"about_ca_system_score_gemma":0.00060220977,"threshold_uncertainty_score":0.009194672},"labels":[],"label_agreement":null},{"id":"W4313193484","doi":"10.1109/ted.2022.3227894","title":"Bias Dependence of Non-Fourier Heat Spreading in GaN HEMTs","year":2022,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Thermal properties of materials","field":"Materials Science","cited_by":46,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"National Natural Science Foundation of China","keywords":"Materials science; Optoelectronics; Fourier transform; Wide-bandgap semiconductor; Electronic engineering; Physics; Engineering","score_opus":0.02267773880140397,"score_gpt":0.25530681500181984,"score_spread":0.23262907620041587,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4313193484","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.98368776,0.00027931773,0.0134527525,0.000064413434,0.000017836646,0.000009558511,0.000034767938,0.00010930732,0.002344232],"genre_scores_gemma":[0.99916494,0.000049796057,0.00057571154,0.000005205214,0.0000020060118,0.0000022750437,0.000009151637,0.000008507873,0.00018243014],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99994206,0.000009221261,0.0000020485857,0.000011301379,0.000025398973,0.000009984282],"domain_scores_gemma":[0.9998029,0.000108153734,0.000026248395,0.000018074648,0.000037445934,0.0000072537855],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000108374086,0.00018679484,0.0001283924,0.00015799601,0.0001098421,0.00021064132,0.00019966307,0.00019849396,0.0005085046],"category_scores_gemma":[0.00052099506,0.00012422643,0.00019444384,0.00010790459,0.00027263662,0.00029366443,0.000120969424,0.00015390571,0.00007370118],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00023199759,0.000083678424,0.0074464898,0.00015020961,0.00006196572,0.0005848187,0.00025598955,0.28652787,0.68846846,0.004124427,0.00026879105,0.01179525],"study_design_scores_gemma":[0.000008482981,0.000064989035,0.0047824676,0.000005342603,0.000012331169,0.00009081554,0.000030942134,0.89084345,0.103350356,0.0006140634,0.00018504722,0.0000117036225],"about_ca_topic_score_codex":0.0010014428,"about_ca_topic_score_gemma":0.0008558835,"teacher_disagreement_score":0.0010014428,"about_ca_system_score_codex":0.00027497983,"about_ca_system_score_gemma":0.00013619625,"threshold_uncertainty_score":0.0019951463},"labels":[],"label_agreement":null},{"id":"W4313396548","doi":"10.1109/ted.2022.3225139","title":"Preliminary Experimental Study on a Compact Relativistic Magnetron With Diffraction Output of TEM Mode","year":2022,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Gyrotron and Vacuum Electronics Research","field":"Physics and Astronomy","cited_by":9,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Calgary","funders":"National Natural Science Foundation of China","keywords":"Diffraction; Microwave; Diode; Physics; Voltage; Optics; Materials science; Cavity magnetron; Optoelectronics; Mode (computer interface); Power (physics); Radiation; Magnetic field; Computational physics; Electrical engineering; Engineering; Computer science","score_opus":0.022486690559271477,"score_gpt":0.31427631737862904,"score_spread":0.29178962681935755,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4313396548","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9894911,0.00029527134,0.006845619,0.00012337582,0.00003403608,0.00005106181,0.00013408139,0.00012669113,0.0028986908],"genre_scores_gemma":[0.99156284,0.00009868721,0.006501937,0.000031579588,0.00001762273,0.00002493184,0.00011078424,0.000037035174,0.0016145121],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99957436,0.00006157206,0.000018802337,0.000102638536,0.00016358946,0.00007896844],"domain_scores_gemma":[0.99933916,0.00018568346,0.00009421429,0.000108040294,0.00016232293,0.00011050413],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0011243911,0.00044678873,0.00067811843,0.00025515308,0.0004961752,0.00044919897,0.00051912124,0.0005344715,0.0022024508],"category_scores_gemma":[0.00081631565,0.00026264568,0.00031194594,0.0004415744,0.00081743376,0.000629686,0.00048294477,0.0004462877,0.00035383407],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00092041877,0.00012696898,0.0040743393,0.00027044976,0.000035327987,0.0004730487,0.0005334069,0.0004240452,0.98475224,0.00170405,0.0003972591,0.0062884125],"study_design_scores_gemma":[0.00024740712,0.0047765323,0.019672554,0.000037102767,0.00012189114,0.0016905739,0.0005457713,0.0042124176,0.9566937,0.00032135702,0.011607559,0.00007313981],"about_ca_topic_score_codex":0.00034375163,"about_ca_topic_score_gemma":0.00044983678,"teacher_disagreement_score":0.0022024508,"about_ca_system_score_codex":0.00030302338,"about_ca_system_score_gemma":0.0003483426,"threshold_uncertainty_score":0.007367909},"labels":[],"label_agreement":null},{"id":"W4380635208","doi":"10.1109/ted.2023.3279812","title":"On the Existence of Negative Capacitance: Examining Ferroelectric-Dielectric Stack Experiments Using the NLS and LK Models","year":2023,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Ferroelectric and Negative Capacitance Devices","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Alberta","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Ferroelectricity; Capacitance; Dielectric; Stack (abstract data type); Voltage; Negative impedance converter; Physics; Hysteresis; Statistical physics; Condensed matter physics; Computer science; Optoelectronics; Quantum mechanics; Voltage source","score_opus":0.06760075351957254,"score_gpt":0.2721711240726451,"score_spread":0.20457037055307256,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4380635208","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99007726,0.000336411,0.0059017143,0.00019139242,0.00002348076,0.000034120378,0.00015012365,0.00011901552,0.0031665293],"genre_scores_gemma":[0.99724495,0.00022117163,0.0020438575,0.00004387155,0.0000085970705,0.000026944706,0.000065750624,0.000023803987,0.00032113816],"study_design_codex":"bench_or_experimental","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99967825,0.0000408227,0.000018401443,0.00006284192,0.00012968342,0.00007006246],"domain_scores_gemma":[0.99840385,0.0010323648,0.0002011577,0.00014109602,0.00017411422,0.00004743586],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.001012946,0.00046074862,0.00042249783,0.00063379074,0.00057661394,0.0005569007,0.0010258333,0.0008134747,0.002242695],"category_scores_gemma":[0.0026874063,0.0002206175,0.0002025697,0.00062015746,0.0010887993,0.0014292083,0.0005624016,0.0009723276,0.00026346708],"study_design_candidate":"simulation_or_modeling","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00044279805,0.0003646547,0.003114872,0.0004388053,0.0000333031,0.00069913623,0.00063109066,0.009188973,0.964047,0.012158456,0.00061708904,0.008263717],"study_design_scores_gemma":[0.000055920274,0.0007509457,0.006907936,0.00006637481,0.00004154782,0.0002649894,0.0005203487,0.22655745,0.7593034,0.004312123,0.0011529961,0.00006594488],"about_ca_topic_score_codex":0.0011714781,"about_ca_topic_score_gemma":0.0014287852,"teacher_disagreement_score":0.002242695,"about_ca_system_score_codex":0.00047090766,"about_ca_system_score_gemma":0.00025964942,"threshold_uncertainty_score":0.007502556},"labels":[],"label_agreement":null},{"id":"W4392567289","doi":"10.1109/ted.2024.3370532","title":"Quantum Transport Simulations of Sub-60-mV/Decade Switching of Silicon Cold Source Transistors","year":2024,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":13,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McGill University; Nanoacademic Technologies","funders":"Higher Education Discipline Innovation Project; Natural Sciences and Engineering Research Council of Canada; National Natural Science Foundation of China","keywords":"Transistor; Silicon; Materials science; Optoelectronics; Quantum; Engineering physics; Physics; Electrical engineering; Engineering; Voltage; Quantum mechanics","score_opus":0.012942710810926504,"score_gpt":0.2444462522092373,"score_spread":0.23150354139831078,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4392567289","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9794835,0.00014815845,0.0075365994,0.00041220957,0.000034428376,0.000027865584,0.0005046429,0.00014055011,0.011711963],"genre_scores_gemma":[0.996788,0.00006426852,0.0013961203,0.00004734166,0.00000572111,0.000033742046,0.00016780938,0.00003142499,0.001465648],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99988985,0.000023200677,0.000003934653,0.000013813888,0.000030584382,0.000038528375],"domain_scores_gemma":[0.9994511,0.00035287626,0.000038097154,0.000026450605,0.00008263139,0.00004874917],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00033395243,0.00029837948,0.0005679081,0.00036777163,0.00059438334,0.00045484325,0.00080293283,0.0010745447,0.0035520531],"category_scores_gemma":[0.0010275753,0.00025383552,0.000633641,0.0004123032,0.00055980374,0.0005333892,0.00025562156,0.0004963353,0.00017644475],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00008580604,0.000057123725,0.0015482346,0.000043607473,0.000026224077,0.00018521328,0.00011899987,0.9846423,0.004989847,0.00628151,0.00062990625,0.0013910678],"study_design_scores_gemma":[0.000008934557,0.00001701062,0.00031269618,0.000003070147,0.0000038587714,0.000007758192,0.000019906482,0.9983398,0.0006109311,0.0005310058,0.00014130955,0.0000037013342],"about_ca_topic_score_codex":0.017865663,"about_ca_topic_score_gemma":0.0113554755,"teacher_disagreement_score":0.017865663,"about_ca_system_score_codex":0.0014701148,"about_ca_system_score_gemma":0.00087711256,"threshold_uncertainty_score":0.035523355},"labels":[],"label_agreement":null},{"id":"W4403296844","doi":"10.1109/ted.2024.3469918","title":"Stimulated Secondary Emission of Single-Photon Avalanche Diodes","year":2024,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Advanced Optical Sensing Technologies","field":"Physics and Astronomy","cited_by":4,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"TRIUMF","funders":"","keywords":"Optoelectronics; Diode; Single-photon avalanche diode; Avalanche diode; Avalanche photodiode; Photon; Avalanche breakdown; Physics; Materials science; Electrical engineering; Optics; Detector; Engineering; Voltage; Breakdown voltage","score_opus":0.012172975297783772,"score_gpt":0.262862516198941,"score_spread":0.25068954090115725,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4403296844","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9807662,0.0004191477,0.013782812,0.000057903562,0.00003216585,0.00002971682,0.00026172225,0.00016726692,0.0044830367],"genre_scores_gemma":[0.9955577,0.00013224877,0.002491923,0.000021777298,0.0000066172456,0.00002061546,0.00012697128,0.00003088602,0.0016111829],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9997603,0.000033655564,0.0000059488207,0.00007392079,0.000080939026,0.000045222136],"domain_scores_gemma":[0.99963665,0.00016003483,0.000055279874,0.00003072062,0.000078739184,0.00003852369],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00019483078,0.00041013004,0.00036399168,0.00030219363,0.00018483427,0.0004888237,0.000354664,0.0003104743,0.0025318493],"category_scores_gemma":[0.0004094847,0.00016908589,0.00033146754,0.00029205534,0.00034066994,0.000359896,0.00036655547,0.0004670753,0.00042644114],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00019594155,0.00002332828,0.0012851026,0.00008031591,0.000014347283,0.00015818664,0.00011283644,0.0005568946,0.9935189,0.00087256264,0.00018693575,0.0029946426],"study_design_scores_gemma":[0.000013294336,0.00011705327,0.003994403,0.000012137738,0.000008097368,0.00019051624,0.000044424512,0.0057011535,0.98834014,0.00037715415,0.0011931148,0.000008550233],"about_ca_topic_score_codex":0.00018460986,"about_ca_topic_score_gemma":0.00021877479,"teacher_disagreement_score":0.0025318493,"about_ca_system_score_codex":0.0004307841,"about_ca_system_score_gemma":0.00018844567,"threshold_uncertainty_score":0.00846988},"labels":[],"label_agreement":null},{"id":"W4403863718","doi":"10.1109/ted.2024.3480028","title":"Micromachined Capacitive Sensor With Configured Boundaries: Approach, Design and Fabrication","year":2024,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Advanced MEMS and NEMS Technologies","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Windsor","funders":"Natural Sciences and Engineering Research Council of Canada; Canada Foundation for Innovation; CMC Microsystems","keywords":"Fabrication; Capacitive sensing; Surface micromachining; Microelectromechanical systems; Electrical engineering; Electronic engineering; Engineering; Materials science; Capacitance; Optoelectronics; Computer science; Physics; Electrode","score_opus":0.008802273623719555,"score_gpt":0.2156498874754477,"score_spread":0.20684761385172815,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4403863718","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.39260852,0.005062832,0.58704376,0.0006786337,0.0008242636,0.00069347763,0.0006834858,0.0023703151,0.010034774],"genre_scores_gemma":[0.4531581,0.00085730886,0.542075,0.00017445389,0.00006641336,0.00026635538,0.00018547862,0.000053046537,0.0031638313],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9993187,0.00004559437,0.000030514164,0.00020925699,0.00034905897,0.000046908284],"domain_scores_gemma":[0.99956125,0.000075224074,0.0001440825,0.00007520019,0.000098002405,0.00004628255],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0004381788,0.0007279245,0.00047006767,0.0004055467,0.00025648795,0.00067600486,0.0015087619,0.0013350054,0.00079896324],"category_scores_gemma":[0.00056068297,0.00048919057,0.00029938962,0.00024813993,0.00045865966,0.0010305169,0.0007234942,0.0007217079,0.00061504496],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00002350546,0.000016512735,0.00014939091,0.000105094296,0.000007109452,0.0000631423,0.000038337537,0.00037167477,0.9933803,0.00064518844,0.00015845793,0.0050413497],"study_design_scores_gemma":[0.000016188234,0.00032378102,0.0009146257,0.000011669025,0.000016581991,0.0006618216,0.00004368056,0.008193993,0.9807624,0.00020888973,0.008798827,0.00004756852],"about_ca_topic_score_codex":0.00024256657,"about_ca_topic_score_gemma":0.00060996646,"teacher_disagreement_score":0.0015087619,"about_ca_system_score_codex":0.00040983225,"about_ca_system_score_gemma":0.0005315137,"threshold_uncertainty_score":0.002973497},"labels":[],"label_agreement":null},{"id":"W4406172019","doi":"10.1109/ted.2024.3521653","title":"State-Aware Multibit Write Algorithm for TiO<sub> <i>x</i> </sub>-Based Resistive Switching Memory Devices","year":2025,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Advanced Memory and Neural Computing","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Natural Sciences and Engineering Research Council of Canada; Canada First Research Excellence Fund","keywords":"Reset (finance); Resistive random-access memory; State (computer science); Conductance; Algorithm; Voltage; Relaxation (psychology); Amplitude; Computer science; Electrical engineering; Mathematics; Physics; Engineering; Combinatorics; Quantum mechanics","score_opus":0.008248586864534469,"score_gpt":0.24465890705790616,"score_spread":0.2364103201933717,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4406172019","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.064297825,0.00019656723,0.9306031,0.00014493738,0.0000503654,0.00008233323,0.00006691767,0.0016696921,0.0028882904],"genre_scores_gemma":[0.40538222,0.00013226975,0.5869839,0.00012397222,0.000019134004,0.0002450405,0.00022114921,0.00016967373,0.006722702],"study_design_codex":"design_other","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998584,0.00001975571,0.00001487,0.00003156592,0.000055990124,0.000019361592],"domain_scores_gemma":[0.99970347,0.000098540644,0.000040779993,0.0000545231,0.00008760141,0.000015059488],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00018957096,0.0003489215,0.00032748654,0.0002550947,0.00032656558,0.0007109156,0.0009664407,0.0004783287,0.003737282],"category_scores_gemma":[0.00075439847,0.00020786207,0.00021174419,0.00027524002,0.0001567242,0.00073326984,0.00050079107,0.0005309929,0.0007630014],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00063946965,0.00017175445,0.0017317445,0.00021408725,0.000057623274,0.00021010748,0.00037967367,0.1540571,0.12711084,0.018591385,0.0035798429,0.6932563],"study_design_scores_gemma":[0.00004133966,0.00011632169,0.00032493885,0.00001258099,0.000014255219,0.000112083646,0.000039802315,0.96295595,0.03139583,0.003110802,0.0018603698,0.000015612935],"about_ca_topic_score_codex":0.0006272738,"about_ca_topic_score_gemma":0.0017369847,"teacher_disagreement_score":0.003737282,"about_ca_system_score_codex":0.00029684047,"about_ca_system_score_gemma":0.0005722266,"threshold_uncertainty_score":0.012502432},"labels":[],"label_agreement":null},{"id":"W4408047970","doi":"10.1109/ted.2024.3520276","title":"Corrections to “Stimulated Secondary Emission of Single-Photon Avalanche Diodes”","year":2025,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Advanced Optical Sensing Technologies","field":"Physics and Astronomy","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of British Columbia; University of British Columbia Hospital; TRIUMF","funders":"","keywords":"Diode; Physics; Single-photon avalanche diode; Optoelectronics; Avalanche diode; Photon; Avalanche breakdown; Avalanche photodiode; Optics; Detector; Voltage; Quantum mechanics; Breakdown voltage","score_opus":0.009438951198929632,"score_gpt":0.2658808845373146,"score_spread":0.256441933338385,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4408047970","genre_codex":"editorial","genre_gemma":"other","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"other","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.0013622805,0.0055120536,0.01022054,0.061256327,0.90909356,0.00009178046,0.001944912,0.0023186514,0.008199976],"genre_scores_gemma":[0.074716344,0.016936278,0.028708836,0.14398865,0.23790316,0.0006124548,0.0066782734,0.009116943,0.48133907],"study_design_codex":"not_applicable","study_design_gemma":"not_applicable","domain_scores_codex":[0.9917297,0.0010664186,0.0014861203,0.0011289985,0.00404709,0.0005416575],"domain_scores_gemma":[0.96275616,0.008071919,0.002409429,0.002135673,0.023581462,0.0010453397],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0037186847,0.0024396367,0.0024899167,0.0033873646,0.0047207656,0.0026967188,0.0047653387,0.0078052944,0.04209436],"category_scores_gemma":[0.047832575,0.0020872033,0.004876484,0.002336377,0.0019412504,0.0031866385,0.0019132941,0.011516224,0.028138204],"study_design_candidate":"not_applicable","study_design_consensus":"not_applicable","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00017100043,0.000050023333,0.0002577043,0.0005600748,0.00008513754,0.0008360153,0.00009775356,0.00045383887,0.0032840774,0.007402537,0.97329956,0.013502277],"study_design_scores_gemma":[0.000056677767,0.000070872615,0.001837991,0.00021579141,0.00009527817,0.0008556056,0.00008136682,0.0011488573,0.008164768,0.009301658,0.9780442,0.00012695199],"about_ca_topic_score_codex":0.010373985,"about_ca_topic_score_gemma":0.015980478,"teacher_disagreement_score":0.04209436,"about_ca_system_score_codex":0.0055483384,"about_ca_system_score_gemma":0.00583217,"threshold_uncertainty_score":0.14081961},"labels":[],"label_agreement":null},{"id":"W4409494765","doi":"10.1109/ted.2025.3556041","title":"Charge Carrier Lifetime and Trap States in Novel Pure-Boron-Based Ultrashallow <i>p</i> – <i>n</i> Junctions","year":2025,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Boron and Carbon Nanomaterials Research","field":"Materials Science","cited_by":2,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Toronto","funders":"Shanghai Rising-Star Program; Natural Sciences and Engineering Research Council of Canada; National Natural Science Foundation of China","keywords":"Boron; Trap (plumbing); Materials science; Optoelectronics; Charge (physics); Silicon; Charge carrier; Atomic physics; Physics; Electrical engineering; Engineering; Nuclear physics; Quantum mechanics","score_opus":0.008336310522382753,"score_gpt":0.2587002925041616,"score_spread":0.25036398198177884,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4409494765","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99782264,0.0003349819,0.0009630817,0.000016025277,0.0000089749055,0.0000066205457,0.00005746073,0.000027627233,0.000762528],"genre_scores_gemma":[0.99583673,0.0003511382,0.0021520061,0.000018249726,0.000004820391,0.000013209302,0.00008491813,0.000016366643,0.0015225296],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.999846,0.00001001754,0.0000059824997,0.00004256645,0.000067381094,0.000028060402],"domain_scores_gemma":[0.99986374,0.000030947846,0.0000418231,0.000011327566,0.000032458527,0.000019729492],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00019798381,0.0002552066,0.00020798878,0.00018428435,0.00031969484,0.00065815524,0.0006895501,0.000398977,0.0005626981],"category_scores_gemma":[0.00024417436,0.00024996573,0.0001356537,0.00020527311,0.00026437722,0.0005456525,0.00021235802,0.0002896589,0.00019635895],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00008831914,0.000027185886,0.00037952114,0.00004304721,0.000010501563,0.00007401739,0.00007315911,0.00027302845,0.9976768,0.0003436425,0.00007373937,0.0009370776],"study_design_scores_gemma":[0.000010881418,0.0001868439,0.0023894885,0.000005808639,0.000020034768,0.00010227623,0.00008553219,0.0030928385,0.9934674,0.000053754364,0.00057567126,0.000009506523],"about_ca_topic_score_codex":0.0017922958,"about_ca_topic_score_gemma":0.0051721036,"teacher_disagreement_score":0.0017922958,"about_ca_system_score_codex":0.0005708644,"about_ca_system_score_gemma":0.00025733377,"threshold_uncertainty_score":0.0041419268},"labels":[],"label_agreement":null},{"id":"W4409883144","doi":"10.1109/ted.2025.3561703","title":"Stack Optimization of TiO<i> <sub>x</sub> </i>-Based Resistive Switching Devices Through Interface Engineering","year":2025,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Advanced Memory and Neural Computing","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Natural Sciences and Engineering Research Council of Canada; Canada First Research Excellence Fund","keywords":"Stack (abstract data type); Resistive touchscreen; Materials science; Interface (matter); Optoelectronics; Electrical engineering; Electronic engineering; Computer science; Nanotechnology; Engineering; Operating system; Composite material","score_opus":0.007778485957451694,"score_gpt":0.23960176408273545,"score_spread":0.23182327812528375,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4409883144","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.91773546,0.0015960463,0.035528112,0.0005728859,0.00021976957,0.000050408453,0.0004990466,0.0010411508,0.04275706],"genre_scores_gemma":[0.98199224,0.0005474396,0.010996725,0.00007004741,0.000019947849,0.0000503119,0.00033078148,0.00018525553,0.0058071963],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999362,0.0000037444624,0.0000023920054,0.000010179028,0.000026889951,0.000020558417],"domain_scores_gemma":[0.99994016,0.00001117485,0.000013281668,0.0000062016934,0.000021707,0.0000074808627],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000088789784,0.00044830705,0.000311015,0.00021668903,0.00034742826,0.0008829828,0.00085147633,0.0004428559,0.0036891147],"category_scores_gemma":[0.00025391323,0.00015478906,0.00032137282,0.00036585168,0.00013466325,0.0005597298,0.00034677144,0.00039810454,0.0008377854],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00060167315,0.00025959508,0.0016868849,0.00084996637,0.00016901937,0.00035752,0.0001832345,0.0662188,0.85029,0.027221404,0.006628613,0.045533318],"study_design_scores_gemma":[0.00008426525,0.00091026345,0.0026366164,0.00007256966,0.00021534371,0.00027895332,0.0003779544,0.50417626,0.4648283,0.006228931,0.02012181,0.00006873379],"about_ca_topic_score_codex":0.0010746517,"about_ca_topic_score_gemma":0.0025500862,"teacher_disagreement_score":0.0036891147,"about_ca_system_score_codex":0.0005341824,"about_ca_system_score_gemma":0.00037529744,"threshold_uncertainty_score":0.0123413205},"labels":[],"label_agreement":null},{"id":"W4409917066","doi":"10.1109/ted.2025.3561757","title":"Investigating the Performance of Sub-10-nm WSi<sub>2</sub>N<sub>4</sub> MOSFETs With Native Dielectric Through a Machine Learning Tight-Binding Framework","year":2025,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Semiconductor materials and devices","field":"Engineering","cited_by":4,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Dielectric; MOSFET; Materials science; Optoelectronics; Tight binding; Electronic engineering; Engineering physics; Computer science; Condensed matter physics; Electrical engineering; Physics; Transistor; Engineering; Electronic structure; Voltage","score_opus":0.008343024490878065,"score_gpt":0.21954557421439908,"score_spread":0.211202549723521,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4409917066","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9889094,0.00021509768,0.00869744,0.00014358114,0.000017250411,0.000015516733,0.00013455887,0.00020655994,0.0016606244],"genre_scores_gemma":[0.9925626,0.00011846517,0.006216109,0.000022010323,0.0000041303433,0.000016668446,0.00013701984,0.000026204149,0.00089677336],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99992347,0.000010769674,0.000003258619,0.0000132619925,0.00003206201,0.000017182552],"domain_scores_gemma":[0.99983656,0.00006138438,0.000027635697,0.000018154622,0.00004018195,0.000016083337],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0003152917,0.00032350802,0.00040261395,0.0001811944,0.0002539062,0.00027859324,0.0006614856,0.00047981992,0.00132756],"category_scores_gemma":[0.00049356685,0.00012452861,0.00022068188,0.0002649735,0.00027527465,0.0005624375,0.00018852185,0.00030135384,0.00023701304],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0007284927,0.000377361,0.00504746,0.00043520104,0.00014291368,0.00026571177,0.00014426508,0.5771279,0.38667867,0.006711171,0.0015395806,0.020801293],"study_design_scores_gemma":[0.0000130003455,0.00025573236,0.0010923054,0.0000041866633,0.00001312492,0.000016994338,0.00002919376,0.944,0.0537903,0.00049526675,0.00027988068,0.000010022003],"about_ca_topic_score_codex":0.0033077707,"about_ca_topic_score_gemma":0.005684993,"teacher_disagreement_score":0.0033077707,"about_ca_system_score_codex":0.0006322472,"about_ca_system_score_gemma":0.0003905657,"threshold_uncertainty_score":0.006577015},"labels":[],"label_agreement":null},{"id":"W4413267654","doi":"10.1109/ted.2025.3589200","title":"Enhanced Charge Transport in Organic Thin-Film Transistors Through Environmentally Benign MXene-P3HT Nanocomposites","year":2025,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"MXene and MAX Phase Materials","field":"Materials Science","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Thin-film transistor; Nanocomposite; Materials science; Transistor; Organic semiconductor; Charge (physics); Optoelectronics; Organic electronics; Environmentally friendly; Thin film; Nanotechnology; Electrical engineering; Voltage; Layer (electronics); Engineering; Physics","score_opus":0.007219897024157369,"score_gpt":0.23808516179584843,"score_spread":0.23086526477169106,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4413267654","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9933476,0.00090133434,0.0037665141,0.000056571167,0.000022062926,0.000010993167,0.000060495066,0.00008925963,0.0017451864],"genre_scores_gemma":[0.99475163,0.000433698,0.0030720965,0.000017058586,0.0000069684766,0.000008635048,0.000040644572,0.000019371062,0.001649989],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99996424,0.0000032110272,0.0000021051924,0.000009554476,0.000012813009,0.000008150854],"domain_scores_gemma":[0.9999733,0.000008518768,0.0000061160104,0.0000025632826,0.000005192759,0.000004318666],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000052721814,0.00021718732,0.00011080184,0.000109499815,0.00010929545,0.00025004917,0.00017840597,0.00016885341,0.000795479],"category_scores_gemma":[0.000078764686,0.000103227845,0.0001143771,0.000078316065,0.000094472074,0.00035253927,0.00015857058,0.00021019092,0.00025383214],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000012911765,0.000004714056,0.00003199471,0.000019491034,0.0000018267862,0.00003525623,0.000008491971,0.000061533,0.99911386,0.00008377886,0.000014616331,0.00061151263],"study_design_scores_gemma":[0.0000030105411,0.000045326455,0.00027757217,0.0000016155982,0.0000047745175,0.000044011118,0.0000072423977,0.0010218669,0.9980057,0.000023128927,0.0005638471,0.0000020507114],"about_ca_topic_score_codex":0.00026274435,"about_ca_topic_score_gemma":0.0007051848,"teacher_disagreement_score":0.000795479,"about_ca_system_score_codex":0.0001459697,"about_ca_system_score_gemma":0.000064869484,"threshold_uncertainty_score":0.0026611686},"labels":[],"label_agreement":null},{"id":"W4416582957","doi":"10.1109/ted.2025.3631444","title":"Dual-Frequency Square PMUT With Enhanced Transmission Efficiency at Fundamental and Higher Modes","year":2025,"lang":"","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Ultrasound Imaging and Elastography","field":"Medicine","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Windsor","funders":"Hellenic Foundation for Research and Innovation; Natural Sciences and Engineering Research Council of Canada; Windsor Cancer Centre Foundation","keywords":"PMUT; Piezoelectricity; Ultrasonic sensor; Finite element method; Sensitivity (control systems); Transducer; Transmission (telecommunications); Capacitive micromachined ultrasonic transducers; Cascade","score_opus":0.005832997008172149,"score_gpt":0.24870616130865272,"score_spread":0.2428731643004806,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4416582957","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.78016794,0.0036572216,0.20887183,0.0004691863,0.0003766537,0.000112118534,0.0001683792,0.0006997999,0.005476993],"genre_scores_gemma":[0.87622374,0.0006484649,0.12020091,0.00011618998,0.00005796396,0.000054130007,0.000074822536,0.00003327362,0.0025905047],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.999699,0.00003633565,0.000014086528,0.00008523472,0.00014109472,0.000024286403],"domain_scores_gemma":[0.9997315,0.00007220021,0.00007586603,0.000023122791,0.00006751991,0.000029664609],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00023840027,0.0003699677,0.00023103216,0.000259592,0.00012938459,0.0003106795,0.0005248081,0.0005785531,0.0005295807],"category_scores_gemma":[0.0005909757,0.00027923012,0.00014984899,0.00025399338,0.00033350315,0.0005447904,0.00040732336,0.00029791356,0.00023936165],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0000367944,0.0000087775,0.0002249391,0.00011041327,0.0000042256684,0.00012532037,0.000043585438,0.00060669903,0.9864525,0.00059590396,0.00015995644,0.011630812],"study_design_scores_gemma":[0.000011329399,0.00022925565,0.00084076525,0.000008721847,0.0000132344485,0.00076724595,0.000032722044,0.01741885,0.97485435,0.00011689584,0.0056904946,0.000016214815],"about_ca_topic_score_codex":0.00019845157,"about_ca_topic_score_gemma":0.0005513886,"teacher_disagreement_score":0.0005785531,"about_ca_system_score_codex":0.00027258674,"about_ca_system_score_gemma":0.00021164671,"threshold_uncertainty_score":0.0019777417},"labels":[],"label_agreement":null},{"id":"W4416922682","doi":"10.1109/ted.2025.3633207","title":"An Improved 2-D Photon Detection Probability Model for Single-Photon Avalanche Diodes With Experimental Calibrations","year":2025,"lang":"","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Advanced Optical Sensing Technologies","field":"Physics and Astronomy","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McMaster University","funders":"Guangdong Science and Technology Department","keywords":"Photodetection; Monte Carlo method; Diode; Passivation; Dielectric; CMOS; Transmission (telecommunications); Single-photon avalanche diode; Photon; Detector","score_opus":0.01658963132479806,"score_gpt":0.274350771484198,"score_spread":0.25776114015939994,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4416922682","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.028471256,0.00040251276,0.9642745,0.00016696128,0.000037142632,0.00008543584,0.00026834462,0.0005646843,0.0057291915],"genre_scores_gemma":[0.89142746,0.0007152638,0.101081915,0.00016315356,0.00004876878,0.00040399632,0.00032637356,0.00018307514,0.005649939],"study_design_codex":"simulation_or_modeling","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9995509,0.00009233865,0.000020188194,0.00011073728,0.00018927698,0.000036696656],"domain_scores_gemma":[0.999218,0.0003754351,0.000103807724,0.00011308506,0.00017181953,0.000017988707],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0008772626,0.0007172139,0.00056953216,0.00057381263,0.0003096109,0.00086690363,0.0017278262,0.0013253619,0.0015758729],"category_scores_gemma":[0.0022422043,0.0005824935,0.0008064236,0.0005893284,0.000468485,0.0011007944,0.00047315223,0.0008988626,0.00044024142],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000032657794,0.00003249094,0.00046509804,0.00004993048,0.00001394972,0.00009670207,0.00003319376,0.9778331,0.008897294,0.0075482423,0.00022476187,0.0047725453],"study_design_scores_gemma":[0.0000016662186,0.000004555608,0.000060762522,0.0000022240022,0.0000024165802,0.0000132524865,0.0000012015535,0.9983028,0.00089833187,0.0005076609,0.00020175654,0.0000034020434],"about_ca_topic_score_codex":0.0044276887,"about_ca_topic_score_gemma":0.0022973982,"teacher_disagreement_score":0.0044276887,"about_ca_system_score_codex":0.0013482986,"about_ca_system_score_gemma":0.0008818456,"threshold_uncertainty_score":0.009782672},"labels":[],"label_agreement":null},{"id":"W4417051936","doi":"10.1109/ted.2025.3636111","title":"Characterization of Leakage Current in Buried Heterostructure Semiconductor InGaAsP Lasers Using a Diode-Resistor Electrical Model","year":2025,"lang":"","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Semiconductor Quantum Structures and Devices","field":"Physics and Astronomy","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"National Research Council Canada","funders":"","keywords":"Semiconductor laser theory; Heterojunction; Doping; Leakage (economics); Laser; Diode; Saturation current; Active layer; Laser diode","score_opus":0.01794074117615009,"score_gpt":0.28733649932594096,"score_spread":0.2693957581497909,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4417051936","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.8810055,0.00058796204,0.11492759,0.00012288464,0.000023935318,0.000052145297,0.00044931722,0.001233702,0.00159688],"genre_scores_gemma":[0.9920664,0.0001554057,0.007160163,0.000011228923,0.0000030953158,0.000024029121,0.00009137756,0.000025154219,0.00046311246],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9997706,0.00003201913,0.00001605241,0.000056195055,0.000101197504,0.000023905455],"domain_scores_gemma":[0.9997167,0.000105249885,0.000045872086,0.000057770987,0.00006502253,0.000009292075],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00029080085,0.00044512402,0.00038676074,0.0003280018,0.0002272942,0.0004241117,0.00078521203,0.00055774953,0.00059274863],"category_scores_gemma":[0.000547993,0.00024301242,0.00045444566,0.00035664614,0.00025067385,0.00083552254,0.00021498324,0.00033536757,0.00026127923],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00026226294,0.00010898727,0.0055354554,0.00019063248,0.000067629146,0.00030441058,0.00031889786,0.0861057,0.8850891,0.0014544334,0.00034537556,0.020217068],"study_design_scores_gemma":[0.000013990222,0.00043542986,0.0043511665,0.000019796189,0.000045530516,0.00021504829,0.000091724,0.6935741,0.29948327,0.0006741838,0.0010608337,0.000035046796],"about_ca_topic_score_codex":0.0017404284,"about_ca_topic_score_gemma":0.0020041142,"teacher_disagreement_score":0.0017404284,"about_ca_system_score_codex":0.0008122896,"about_ca_system_score_gemma":0.00033310248,"threshold_uncertainty_score":0.0058936477},"labels":[],"label_agreement":null}]}