{"meta":{"query_hash":"5afa33aefe1d","filters":{"venue":"IEEE Transactions on Electron Devices"},"cohort_total":177,"direct_labels_cover":0,"predictions_cover":177,"exported":177,"export_cap":100000,"truncated":false,"label_status":"direct model label, unvalidated","prediction_status":"machine_predicted_unvalidated (Codex and Gemma teacher distillation)","score_status":"score_only:v0-immature-baseline","snapshot":{"source":"OpenAlex, pinned release, all 482 partitions","release":"2026-06-24","frame_built":"2026-07-12"},"permalink":"https://metacan.xera.ac/q/5afa33aefe1d","api":"https://metacan.xera.ac/api/v1/cohort?venue=IEEE+Transactions+on+Electron+Devices"},"results":[{"id":"W1896581718","doi":"10.1109/ted.2015.2475126","title":"Afterpulsing Characteristics of Free-Running and Time-Gated Single-Photon Avalanche Diodes in 130-nm CMOS","year":2015,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Advanced Optical Sensing Technologies","field":"Physics and Astronomy","cited_by":41,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McMaster University","funders":"FedDev Ontario; Canada Foundation for Innovation; CMC Microsystems","keywords":"CMOS; Single-photon avalanche diode; Diode; Photon counting; Optoelectronics; Physics; Avalanche photodiode; Avalanche diode; Pixel; Photon; Materials science; Detector; Optics; Voltage; Breakdown voltage; Quantum mechanics","score_opus":0.01426501060234125,"score_gpt":0.2419168514138216,"score_spread":0.22765184081148035,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1896581718","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.94231653,0.00006822724,0.05667436,0.000118194854,0.000059715025,0.00015000477,0.000021881126,0.00011233535,0.00047877323],"genre_scores_gemma":[0.9957797,0.0000052974947,0.004070004,0.000018603403,0.000023409933,0.000008623031,0.000006010065,0.000023629493,0.00006472648],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9989698,0.000031996467,0.0002852442,0.00025257014,0.00014421168,0.00031620733],"domain_scores_gemma":[0.9994109,0.00009971153,0.00012002621,0.00024289021,0.0000638279,0.00006263856],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000101052676,0.00018785824,0.00029884264,0.00014530611,0.00006151936,0.00003559434,0.0001372421,0.000079109115,0.000017297505],"category_scores_gemma":[0.000008590124,0.00018281414,0.000044583176,0.00026910275,0.0001130191,0.00018790511,0.000003956862,0.00031081686,0.0000081140015],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0009611134,0.0020553945,0.032284245,0.0001537427,0.00043661197,0.000026250482,0.0018485861,0.004982791,0.55907977,0.0015078963,0.00007094049,0.39659268],"study_design_scores_gemma":[0.0012047059,0.00060114864,0.0023876317,0.00028198678,0.000088974746,0.0000050048648,0.00040471365,0.009723494,0.97988826,0.0045408895,0.0003910754,0.00048211173],"about_ca_topic_score_codex":0.00011866444,"about_ca_topic_score_gemma":0.000037934264,"teacher_disagreement_score":0.42080852,"about_ca_system_score_codex":0.0000675465,"about_ca_system_score_gemma":0.000030933803,"threshold_uncertainty_score":0.7454944},"labels":[],"label_agreement":null},{"id":"W1992708321","doi":"10.1109/ted.2013.2297677","title":"Design and Fabrication of a Novel MEMS Capacitive Transducer With Multiple Moving Membrane, ${\\rm M}^{3}$-CMUT","year":2014,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Ultrasonics and Acoustic Wave Propagation","field":"Engineering","cited_by":21,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Manitoba","funders":"CMC Microsystems","keywords":"Transducer; Capacitive micromachined ultrasonic transducers; Capacitive sensing; Materials science; Microelectromechanical systems; Fabrication; Acoustics; Ultrasonic sensor; Deflection (physics); Voltage; Surface micromachining; Optoelectronics; Electrical engineering; Engineering; Optics","score_opus":0.00961646367147393,"score_gpt":0.19684878695469302,"score_spread":0.1872323232832191,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1992708321","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.25260708,0.000055242857,0.746793,0.000025812938,0.000049946288,0.0002228061,0.000008900751,0.00009057053,0.00014664495],"genre_scores_gemma":[0.9918587,0.00010207873,0.007879075,0.000020578611,0.000022908449,0.00005535403,0.0000034089562,0.00003612042,0.000021726573],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9992033,0.00002541896,0.0001926484,0.00019852768,0.00016260207,0.00021745297],"domain_scores_gemma":[0.999439,0.00024794517,0.000052428273,0.00012613615,0.00008200106,0.00005250006],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00013068778,0.00017212878,0.00018171662,0.00012787059,0.000090788715,0.000025325131,0.00006965503,0.00007115418,0.000011475466],"category_scores_gemma":[0.0000048475085,0.00015468932,0.000032735243,0.00020354899,0.000043914923,0.0001852166,1.823493e-7,0.00018366618,0.0000018627574],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00004582832,0.00006741037,0.00000918948,0.000089322784,0.00007068779,1.09432385e-7,0.0004523636,0.44801754,0.5423789,0.00003059097,0.000001699557,0.008836334],"study_design_scores_gemma":[0.00049753755,0.00017775521,0.00014635519,0.00004546924,0.00006503482,0.0000053792683,0.000049668724,0.45862865,0.5402068,0.000016273638,0.00002683456,0.00013424813],"about_ca_topic_score_codex":0.000048890975,"about_ca_topic_score_gemma":0.000106247964,"teacher_disagreement_score":0.7392517,"about_ca_system_score_codex":0.00004594607,"about_ca_system_score_gemma":0.000020131007,"threshold_uncertainty_score":0.6308048},"labels":[],"label_agreement":null},{"id":"W1993918690","doi":"10.1109/ted.2005.863542","title":"15-nm base type-II InP/GaAsSb/InP DHBTs with F/sub T/=384 GHz and a 6-V BV/sub CEO/","year":2006,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Semiconductor Quantum Structures and Devices","field":"Physics and Astronomy","cited_by":34,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Simon Fraser University","funders":"","keywords":"Materials science; Indium phosphide; Heterojunction bipolar transistor; Optoelectronics; Common emitter; Bipolar junction transistor; Heterojunction; Gallium arsenide; Lithography; Electrical engineering; Voltage; Transistor","score_opus":0.005950952068509289,"score_gpt":0.2149084604087488,"score_spread":0.20895750834023952,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1993918690","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9893702,0.00054077135,0.007508858,0.00016168918,0.00025352882,0.00029536814,0.000050623523,0.00011690694,0.0017020204],"genre_scores_gemma":[0.9988531,0.00002654204,0.00020901556,0.00021047573,0.00031261396,0.000034237546,0.000033200064,0.000056127625,0.00026472597],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99811804,0.000048618043,0.00033439175,0.00057381677,0.0003072544,0.0006178691],"domain_scores_gemma":[0.99912673,0.00010749293,0.00016911615,0.00034239993,0.000106447034,0.0001478351],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.00011515045,0.00041815912,0.00035823646,0.00021134358,0.00049140956,0.0001290954,0.00018058626,0.000111360074,0.00038965876],"category_scores_gemma":[6.0405415e-7,0.0003424433,0.00011553151,0.00048128687,0.00009760159,0.00035065625,0.0000028952795,0.0004578742,0.000036525424],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0029036542,0.003325061,0.03882283,0.00045182402,0.0024022844,0.000075886215,0.0017723732,0.014004803,0.82754934,0.010130705,0.006709961,0.09185126],"study_design_scores_gemma":[0.0019607665,0.0012859161,0.0057424502,0.000117028736,0.00037239233,0.00003525663,0.00048982457,0.001363276,0.9782156,0.001889524,0.007464312,0.0010636615],"about_ca_topic_score_codex":0.0010788384,"about_ca_topic_score_gemma":0.00090736663,"teacher_disagreement_score":0.15066624,"about_ca_system_score_codex":0.00004738943,"about_ca_system_score_gemma":0.000119057535,"threshold_uncertainty_score":0.9999028},"labels":[],"label_agreement":null},{"id":"W2022551088","doi":"10.1109/ted.2012.2209653","title":"Capacitance Modeling and Characterization of Planar MOSCAP Devices for Wideband-Gap Semiconductors With High-$\\kappa$ Dielectrics","year":2012,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Semiconductor materials and devices","field":"Engineering","cited_by":13,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Alberta","funders":"","keywords":"Capacitance; Materials science; Dielectric; Planar; Transistor; Optoelectronics; Transmission line; Semiconductor; Electronic engineering; Differential capacitance; Electrical engineering; Engineering; Computer science; Physics; Voltage; Electrode","score_opus":0.01678776082919921,"score_gpt":0.21610138163976056,"score_spread":0.19931362081056134,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2022551088","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9311366,0.0009115266,0.06688637,0.000020730362,0.00040156362,0.00032804447,0.00010463646,0.00017105542,0.00003944484],"genre_scores_gemma":[0.9985566,0.00040439895,0.0006489661,0.00005921532,0.00011437513,0.00009183209,0.000037766004,0.00006528111,0.000021529087],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9987815,0.000025303825,0.0003295928,0.00022952793,0.00016776517,0.00046630323],"domain_scores_gemma":[0.9994654,0.00008613543,0.00010365874,0.00016882931,0.00007554069,0.00010040073],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.00013818435,0.00028341397,0.0003464861,0.00018470471,0.00012442368,0.000046227207,0.00011217367,0.00012891472,0.000018828485],"category_scores_gemma":[0.0000017483269,0.00024901735,0.000046231846,0.00024601736,0.000031123906,0.0007245043,3.6180933e-7,0.00014885498,0.0000021557232],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0000869815,0.000050478135,0.00022241191,0.00034128153,0.00012906666,1.4945661e-7,0.00043396623,0.008193992,0.9900232,0.00012222196,0.000006261426,0.00038999054],"study_design_scores_gemma":[0.0004656024,0.00023517152,0.00023900047,0.00010708075,0.00015312605,0.000012741137,0.00013375115,0.011385131,0.9865761,0.000054409502,0.00025618024,0.0003817097],"about_ca_topic_score_codex":0.000061460356,"about_ca_topic_score_gemma":0.0001805197,"teacher_disagreement_score":0.06742001,"about_ca_system_score_codex":0.000058082624,"about_ca_system_score_gemma":0.00002272089,"threshold_uncertainty_score":0.9999962},"labels":[],"label_agreement":null},{"id":"W2031972807","doi":"10.1109/ted.2012.2204998","title":"Investigation of Hole-Blocking Contacts for High-Conversion-Gain Amorphous Selenium Detectors for X-Ray Imaging","year":2012,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Perovskite Materials and Applications","field":"Engineering","cited_by":54,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Notation; Electroluminescence; Physics; Materials science; Stereochemistry; Topology (electrical circuits); Combinatorics; Chemistry; Mathematics; Nanotechnology; Layer (electronics); Arithmetic","score_opus":0.011280194242956247,"score_gpt":0.21881550477180356,"score_spread":0.2075353105288473,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2031972807","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.65674895,0.00013342737,0.3420595,0.000056780085,0.00032203182,0.00043929898,0.0000773976,0.00015315725,0.000009447],"genre_scores_gemma":[0.99722546,0.00002388514,0.0020485423,0.00006130549,0.0001270634,0.00041870913,0.00002456404,0.00005135856,0.000019081497],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99907684,0.000017472465,0.0002662821,0.00015736146,0.00009818627,0.0003838793],"domain_scores_gemma":[0.99944615,0.00017053825,0.000077208984,0.00015308967,0.0000660374,0.00008694509],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00017272851,0.00017523767,0.00020118254,0.00014079493,0.00015676307,0.00002833721,0.00010864785,0.00007048184,0.000016134249],"category_scores_gemma":[0.000002938443,0.00018282562,0.00008625295,0.00015619531,0.000027249525,0.0002732908,5.2725596e-7,0.00008940507,0.0000059233735],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000039688795,0.00002736351,0.00011984169,0.00020071703,0.00005957818,3.5705327e-8,0.00020425608,0.016713925,0.9807459,0.00009659208,0.00011704795,0.0016750296],"study_design_scores_gemma":[0.0005315591,0.000067745284,0.0005431042,0.00003613262,0.00009682564,0.000001390044,0.000046420217,0.010566541,0.98671997,0.000060160382,0.00113367,0.0001964952],"about_ca_topic_score_codex":0.00004761264,"about_ca_topic_score_gemma":0.000045644283,"teacher_disagreement_score":0.3404765,"about_ca_system_score_codex":0.00009483262,"about_ca_system_score_gemma":0.000022269563,"threshold_uncertainty_score":0.7455412},"labels":[],"label_agreement":null},{"id":"W2040856193","doi":"10.1109/ted.2006.887220","title":"Stability of nc-Si:H TFTs With Silicon Nitride Gate Dielectric","year":2007,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":36,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Thin-film transistor; Materials science; Gate dielectric; Dielectric; Silicon nitride; Optoelectronics; Ohmic contact; Silicon; Amorphous solid; Amorphous silicon; PMOS logic; Transistor; Analytical Chemistry (journal); Nanotechnology; Electrical engineering; Crystallography; Crystalline silicon; Chemistry; Voltage; Organic chemistry","score_opus":0.008723043750223775,"score_gpt":0.21103014584762111,"score_spread":0.20230710209739733,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2040856193","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.8547013,0.0006492654,0.14201947,0.000044465683,0.0001316454,0.00027641404,0.00001394568,0.001133438,0.0010300982],"genre_scores_gemma":[0.99915737,0.00016591456,0.00052446924,0.000020666186,0.000014344481,0.000029560977,0.0000016299615,0.0000561274,0.000029913623],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9983917,0.000025246589,0.00038690257,0.0003072851,0.0002904409,0.0005984415],"domain_scores_gemma":[0.99914855,0.00019164808,0.00006499131,0.00044250046,0.000077811135,0.000074500225],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.00025367914,0.00029854375,0.00033621638,0.00040386437,0.000093574425,0.0000151140575,0.00027212972,0.00018528166,0.000044464934],"category_scores_gemma":[0.000004714215,0.00027508993,0.000108294895,0.0009720426,0.00011039429,0.00020980246,4.835844e-7,0.00059159787,0.000015619384],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0006396953,0.00051369594,0.0011153622,0.0005843642,0.00051154423,0.00001912817,0.0005979766,0.06048414,0.897606,0.00025450008,0.000030002482,0.037643597],"study_design_scores_gemma":[0.00040609651,0.00045839965,0.002229989,0.000036605106,0.00008357407,0.000011029371,0.00008227623,0.0015810132,0.9943089,0.00005412018,0.00045148912,0.00029653695],"about_ca_topic_score_codex":0.00007119291,"about_ca_topic_score_gemma":0.002426466,"teacher_disagreement_score":0.1444561,"about_ca_system_score_codex":0.00023796185,"about_ca_system_score_gemma":0.000042494303,"threshold_uncertainty_score":0.99997014},"labels":[],"label_agreement":null},{"id":"W2048485090","doi":"10.1109/ted.2012.2205690","title":"Analysis of Dynamic Range, Linearity, and Noise of a Pulse-Frequency Modulation Pixel","year":2012,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"CCD and CMOS Imaging Sensors","field":"Engineering","cited_by":15,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"York University","funders":"CMC Microsystems","keywords":"Linearity; Comparator; CMOS; Pixel; Electronic engineering; Dynamic range; Fixed-pattern noise; Noise (video); Image sensor; Bandwidth (computing); Computer science; Electrical engineering; Engineering; Telecommunications; Artificial intelligence; Voltage; Image (mathematics)","score_opus":0.007031546990228557,"score_gpt":0.235956764203837,"score_spread":0.22892521721360842,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2048485090","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9301295,0.0008676175,0.068526,0.000020725867,0.00009339729,0.00007529878,0.00002426875,0.000072149705,0.00019102507],"genre_scores_gemma":[0.99928975,0.00023381428,0.0003956911,0.000008104309,0.000010980379,0.000006503762,0.000005186402,0.000017038632,0.000032914253],"study_design_codex":"bench_or_experimental","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9993251,0.000021467591,0.00022224362,0.00010229577,0.0001303278,0.00019853996],"domain_scores_gemma":[0.99966276,0.000046180932,0.000046577858,0.00015730974,0.00003988109,0.00004727647],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00009491914,0.00011621343,0.0002361808,0.00038981336,0.000033902812,0.000008019122,0.000058733614,0.000056395933,0.000030858013],"category_scores_gemma":[0.0000016029796,0.000119548444,0.000101803016,0.0006488946,0.00003216123,0.00019494754,3.4042466e-7,0.00012563994,0.000002054296],"study_design_candidate":"simulation_or_modeling","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00006059938,0.0004497009,0.017967891,0.00041829178,0.0024091082,4.7858754e-7,0.0016278613,0.36908987,0.529017,0.00008108811,0.000005018154,0.07887315],"study_design_scores_gemma":[0.00037351393,0.000095118194,0.13158718,0.000040017923,0.001628511,0.0000035517667,0.0000689342,0.7690186,0.096800216,0.000043676013,0.00004375647,0.00029693794],"about_ca_topic_score_codex":0.00010474474,"about_ca_topic_score_gemma":0.00046565084,"teacher_disagreement_score":0.43221673,"about_ca_system_score_codex":0.00003731947,"about_ca_system_score_gemma":0.0000072620346,"threshold_uncertainty_score":0.4875044},"labels":[],"label_agreement":null},{"id":"W2050982403","doi":"10.1109/ted.2013.2290087","title":"Analytical Expression for Thermionic Transport Through Isotype Heterojunction Interfaces of Arbitrary Doping Ratio","year":2014,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Advanced Thermodynamics and Statistical Mechanics","field":"Physics and Astronomy","cited_by":5,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McMaster University","funders":"","keywords":"Thermionic emission; Heterojunction; Current density; Lambert W function; Doping; Boundary value problem; Expression (computer science); Schottky diode; Schottky effect; Mathematical analysis; Transcendental equation; Condensed matter physics; Materials science; Mathematics; Chemistry; Physics; Optoelectronics; Quantum mechanics; Diode; Numerical analysis; Electron; Computer science","score_opus":0.012676496450045179,"score_gpt":0.2787404911875666,"score_spread":0.2660639947375214,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2050982403","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.1764028,0.000020558882,0.82251877,0.000048856222,0.00015753024,0.00020053152,0.000040042047,0.000026882188,0.0005840583],"genre_scores_gemma":[0.9966194,0.0000087817825,0.0030615882,0.000048783495,0.00006106702,0.000055598615,0.000018438232,0.000024670087,0.000101698126],"study_design_codex":"theoretical_or_conceptual","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.999047,0.00004000988,0.000292487,0.00025771614,0.0001249932,0.00023783483],"domain_scores_gemma":[0.9994593,0.00016462883,0.00011003175,0.00016830229,0.00005636453,0.00004136422],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00008623905,0.0001674854,0.00024166997,0.00004854185,0.00013921964,0.000012975709,0.000108765475,0.000053871798,0.00011214968],"category_scores_gemma":[0.0000011861838,0.00014493597,0.00013416557,0.00010796894,0.000033857144,0.00018276027,5.4038793e-7,0.00018436172,0.00000419995],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0019949074,0.0018071574,0.00027701823,0.00039517976,0.0007157568,6.641758e-7,0.0009488946,0.073146604,0.2210376,0.5050804,0.0000308682,0.19456492],"study_design_scores_gemma":[0.001003153,0.001148771,0.000092358605,0.00014827422,0.00016646115,7.8381555e-7,0.0001427075,0.25500992,0.6614668,0.07971532,0.00073152414,0.0003739685],"about_ca_topic_score_codex":0.000019907395,"about_ca_topic_score_gemma":0.000023323084,"teacher_disagreement_score":0.8202166,"about_ca_system_score_codex":0.000022575008,"about_ca_system_score_gemma":0.000026742353,"threshold_uncertainty_score":0.59103173},"labels":[],"label_agreement":null},{"id":"W2059367048","doi":"10.1109/ted.2013.2283802","title":"Electrical Comparison of ${\\rm HfO}_{2}$ and ${\\rm ZrO}_{2}$ Gate Dielectrics on GaN","year":2013,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":24,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Alberta","funders":"","keywords":"Dielectric; Gate dielectric; Materials science; Capacitance; Optoelectronics; Analytical Chemistry (journal); Electrical engineering; Chemistry; Physical chemistry; Transistor; Organic chemistry; Engineering","score_opus":0.014839140432327666,"score_gpt":0.26890739990318646,"score_spread":0.2540682594708588,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2059367048","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.991418,0.00021055271,0.0057449173,0.00018807688,0.00024923138,0.0005191466,0.000037666334,0.00008222596,0.0015501971],"genre_scores_gemma":[0.9990766,0.000040781022,0.00009912446,0.0001610603,0.00012324934,0.00010415638,0.00001565723,0.000047125097,0.00033225748],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9979167,0.00010652734,0.00055598357,0.00047954137,0.00030660062,0.0006346457],"domain_scores_gemma":[0.9988643,0.00023185516,0.00027112456,0.00032913088,0.00012314193,0.00018047675],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.00013321881,0.00038006165,0.00057591236,0.00026197726,0.00022743412,0.00011667624,0.00023640032,0.00012037215,0.00079982285],"category_scores_gemma":[0.0000020968462,0.00033932706,0.00016105152,0.0004210941,0.00007193265,0.00024203736,0.0000015846415,0.00044789736,0.0001176328],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0006068987,0.003476869,0.008063794,0.0002647775,0.00093512685,0.0000024939297,0.001131143,0.0041531497,0.8391828,0.005221667,0.002082623,0.1348787],"study_design_scores_gemma":[0.0008631099,0.0014445632,0.0019420309,0.00006067745,0.0001652684,0.0000021736844,0.0001744323,0.0035302301,0.9888236,0.0008013141,0.0016982955,0.0004943113],"about_ca_topic_score_codex":0.0006529499,"about_ca_topic_score_gemma":0.00007209715,"teacher_disagreement_score":0.14964083,"about_ca_system_score_codex":0.0000527046,"about_ca_system_score_gemma":0.000075543794,"threshold_uncertainty_score":0.9999059},"labels":[],"label_agreement":null},{"id":"W2067795404","doi":"10.1109/ted.2012.2231961","title":"A Quad-Sampling Wide-Dynamic-Range Pulse-Frequency Modulation Pixel","year":2012,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"CCD and CMOS Imaging Sensors","field":"Engineering","cited_by":10,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"York University","funders":"CMC Microsystems","keywords":"Pixel; Dynamic range; Sampling (signal processing); Quantization (signal processing); Wide dynamic range; Electronic engineering; Image resolution; High dynamic range; Image sensor; Computer science; Modulation (music); Engineering; Physics; Algorithm; Computer vision; Acoustics","score_opus":0.013095969413573168,"score_gpt":0.24700149172662644,"score_spread":0.23390552231305328,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2067795404","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.6139414,0.00076640816,0.38279456,0.00010923204,0.0006267744,0.00015870132,0.00001080759,0.0006494677,0.0009426566],"genre_scores_gemma":[0.9982559,0.00012181706,0.001127198,0.00009627631,0.00009582792,0.000042943924,0.0000071426857,0.00007309633,0.00017979258],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99865943,0.000031867537,0.0002639136,0.0002029939,0.00021562612,0.00062618067],"domain_scores_gemma":[0.99945,0.00009356092,0.000037067948,0.0002618633,0.000036116708,0.00012134014],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.00013883815,0.00025247765,0.00018956016,0.00021175829,0.00017381525,0.000053945394,0.00013427479,0.0001033752,0.000114501745],"category_scores_gemma":[0.0000034313086,0.00026871375,0.00011679094,0.00034028676,0.000025124102,0.000583256,3.9628424e-7,0.0003707064,0.00016720427],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00008066454,0.00064745767,0.004747128,0.00044161695,0.0005617247,0.0000039895986,0.0032744322,0.49876586,0.3531675,0.0004051198,0.00015724647,0.13774727],"study_design_scores_gemma":[0.0028512168,0.0005425598,0.07904327,0.0004889511,0.0007501704,0.00017700429,0.0007667605,0.68118626,0.21407925,0.0014063632,0.014376838,0.0043313582],"about_ca_topic_score_codex":0.00006716106,"about_ca_topic_score_gemma":0.0003302248,"teacher_disagreement_score":0.3843145,"about_ca_system_score_codex":0.00019938409,"about_ca_system_score_gemma":0.000015283886,"threshold_uncertainty_score":0.9999765},"labels":[],"label_agreement":null},{"id":"W2070002915","doi":"10.1109/ted.2012.2231682","title":"Measurement of UV from a Microplasma by a Microfabricated Amorphous Selenium Detector","year":2012,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Luminescence Properties of Advanced Materials","field":"Materials Science","cited_by":40,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Microplasma; Detector; Optoelectronics; Responsivity; Noise (video); Photon; Materials science; Spectrometer; Particle detector; Optics; Photodetector; SIGNAL (programming language); Analytical Chemistry (journal); Physics; Chemistry; Plasma","score_opus":0.014069215650848607,"score_gpt":0.22645464348163805,"score_spread":0.21238542783078945,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2070002915","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.98098207,0.0014407363,0.01558536,0.00009706116,0.0007517212,0.00035615565,0.00057184283,0.00018746145,0.000027598597],"genre_scores_gemma":[0.9974768,0.00006465121,0.0019997503,0.00012031262,0.00007040144,0.00012419611,0.000010076178,0.00004944556,0.000084337255],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9977604,0.00013798618,0.0004932724,0.00039290663,0.0005032808,0.0007121555],"domain_scores_gemma":[0.9989278,0.000068838985,0.00026778228,0.0003861444,0.00019542151,0.00015403298],"candidate_categories":["metaepi_narrow","insufficient_payload"],"consensus_categories":[],"category_scores_codex":[0.00031541838,0.00030677393,0.00039994883,0.00010661736,0.00014671872,0.000053094434,0.0003795618,0.000117808624,0.0015090898],"category_scores_gemma":[0.00001407924,0.00026704703,0.00009902584,0.0002280667,0.000111624664,0.00050263153,0.0000030782921,0.00015031088,0.00038452417],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00030286444,0.0003655807,0.0000406705,0.000047742185,0.000043273907,3.4836128e-7,0.00015721975,0.000048886777,0.99740916,3.2363752e-7,0.000857427,0.000726492],"study_design_scores_gemma":[0.00044088427,0.00022572199,0.000102712154,0.00008274077,0.00008336131,0.000007828716,0.00004676111,0.000007703142,0.99559927,0.0000043680316,0.0030998408,0.00029878292],"about_ca_topic_score_codex":0.0006838314,"about_ca_topic_score_gemma":0.0001779655,"teacher_disagreement_score":0.016494766,"about_ca_system_score_codex":0.00024864357,"about_ca_system_score_gemma":0.00008419776,"threshold_uncertainty_score":0.9999782},"labels":[],"label_agreement":null},{"id":"W2075196297","doi":"10.1109/16.906457","title":"Performance predictions for n-p-n Al/sub x/Ga/sub 1-x/N/GaN HBTs","year":2001,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":16,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of British Columbia","funders":"","keywords":"Cutoff frequency; Cutoff; Materials science; Dopant; Optoelectronics; Base (topology); Realization (probability); Doping; Limit (mathematics); Carrier lifetime; Physics; Computational physics; Mathematics; Silicon; Mathematical analysis; Statistics","score_opus":0.012712301695609928,"score_gpt":0.24811063735091843,"score_spread":0.2353983356553085,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2075196297","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9332576,0.000047930644,0.06328418,0.000312106,0.000798563,0.00058611966,0.00017931878,0.00017469955,0.0013595044],"genre_scores_gemma":[0.99803114,0.00009311744,0.00010609651,0.00031985046,0.0003226621,0.00040653194,0.00005498046,0.00005630802,0.0006092955],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9983775,0.00003935508,0.0003569961,0.0004306914,0.00019070417,0.00060473115],"domain_scores_gemma":[0.99920213,0.000085036154,0.00014105017,0.00032900134,0.00010738496,0.00013537481],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.00014377461,0.00030739466,0.00028970666,0.0001606256,0.0005050879,0.00009808689,0.00022163766,0.00007659722,0.00035372237],"category_scores_gemma":[6.7358116e-7,0.00029734764,0.00020905367,0.00027244812,0.000042968917,0.00037753672,8.6161e-7,0.00022611419,0.00011240751],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0005246024,0.0013126613,0.0024783097,0.0001685141,0.0007271548,0.0000022028603,0.00039862376,0.024431834,0.91607016,0.00046071372,0.0036815866,0.04974365],"study_design_scores_gemma":[0.0011516848,0.00063164113,0.0008159303,0.000072310104,0.00022860817,0.000009191085,0.00013664615,0.005855465,0.9428781,0.0001777454,0.04752179,0.0005208892],"about_ca_topic_score_codex":0.00009961225,"about_ca_topic_score_gemma":0.00013312227,"teacher_disagreement_score":0.06477358,"about_ca_system_score_codex":0.00006098487,"about_ca_system_score_gemma":0.00009711852,"threshold_uncertainty_score":0.99994785},"labels":[],"label_agreement":null},{"id":"W2097929344","doi":"10.1109/ted.2006.885663","title":"At-Bias Extraction of Access Parasitic Resistances in AlGaN/GaN HEMTs: Impact on Device Linearity and Channel Electron Velocity","year":2006,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":70,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Simon Fraser University","funders":"","keywords":"Linearity; Biasing; Transistor; Channel (broadcasting); Physics; Topology (electrical circuits); Optoelectronics; Materials science; Analytical Chemistry (journal); Electrical engineering; Computer science; Chemistry; Voltage; Telecommunications; Engineering; Quantum mechanics","score_opus":0.024891370477768387,"score_gpt":0.3110855892601783,"score_spread":0.2861942187824099,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2097929344","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99721974,0.00024116822,0.0010950743,0.00010223296,0.00017475308,0.0003763712,0.000110562956,0.00004833083,0.00063177495],"genre_scores_gemma":[0.9994496,0.000043131848,0.000028696002,0.000056998473,0.00013732845,0.00006343272,0.000044904893,0.00003488822,0.00014102533],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99800485,0.00015625369,0.00052827294,0.0004942904,0.0002624107,0.000553917],"domain_scores_gemma":[0.9990098,0.00022886586,0.00032983324,0.00026179102,0.0000816606,0.00008804008],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.0002906383,0.00036975983,0.0004814582,0.00025153378,0.00021564499,0.00011080717,0.00020524794,0.00011747489,0.00016118174],"category_scores_gemma":[0.000001736159,0.0003337539,0.00015254544,0.0003910331,0.00006408013,0.00046457085,0.0000016124185,0.00034743734,0.000010893214],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":true,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0032782936,0.0037340878,0.043308437,0.00061645964,0.00057022064,0.000012474142,0.00053246156,0.03558266,0.9056539,0.0008682265,0.00029539014,0.005547367],"study_design_scores_gemma":[0.00071526854,0.0004429735,0.047147,0.00011319109,0.00009041345,0.0000033245597,0.000058034155,0.000525747,0.94963926,0.0007372709,0.00017361382,0.0003539096],"about_ca_topic_score_codex":0.0077299774,"about_ca_topic_score_gemma":0.005786173,"teacher_disagreement_score":0.043985333,"about_ca_system_score_codex":0.0001993276,"about_ca_system_score_gemma":0.00010810445,"threshold_uncertainty_score":0.9999114},"labels":[],"label_agreement":null},{"id":"W2098194845","doi":"10.1109/16.974769","title":"A scalable meander-line resistor model for silicon RFICs","year":2002,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Radio Frequency Integrated Circuit Design","field":"Engineering","cited_by":23,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McMaster University","funders":"CMC Microsystems","keywords":"RFIC; Resistor; Meander (mathematics); Equivalent circuit; Scalability; Electronic engineering; Line (geometry); Radio frequency; Electrical engineering; Silicon; Materials science; Engineering; Computer science; Optoelectronics; Voltage","score_opus":0.03409433805715776,"score_gpt":0.23485792744777176,"score_spread":0.200763589390614,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2098194845","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.027939148,0.0014967687,0.96319413,0.00016897808,0.00036953136,0.0005227292,0.00006324954,0.00091077684,0.0053346828],"genre_scores_gemma":[0.9951258,0.00032026804,0.00049271097,0.00010913746,0.000059803744,0.0002751292,0.000004069469,0.000093475035,0.0035196063],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9986198,0.000023396531,0.00031100292,0.0003056131,0.00019859905,0.00054160046],"domain_scores_gemma":[0.99934214,0.000106104366,0.00003532227,0.00032806132,0.00008030427,0.000108055516],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.00011233736,0.00028270754,0.00025703842,0.0002184136,0.00017620437,0.00005205938,0.0002211491,0.00018076177,0.00013829183],"category_scores_gemma":[0.000004546016,0.0002928295,0.00015168184,0.0003442882,0.000031467425,0.00026245,4.8785846e-8,0.0003657783,0.000089869915],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000020346224,0.00009717198,6.21659e-7,0.00007463271,0.000112844515,0.0000012208972,0.0002144009,0.90447754,0.08663762,0.00013388002,0.0024977257,0.0057320194],"study_design_scores_gemma":[0.0003257738,0.00014520207,9.993337e-7,0.000024579233,0.00006695886,0.0000067255373,0.000014942953,0.71042955,0.28758085,0.00025565433,0.00090951263,0.00023922617],"about_ca_topic_score_codex":0.000015857244,"about_ca_topic_score_gemma":0.00028717917,"teacher_disagreement_score":0.9671866,"about_ca_system_score_codex":0.00034965435,"about_ca_system_score_gemma":0.000028316674,"threshold_uncertainty_score":0.9999524},"labels":[],"label_agreement":null},{"id":"W2099689722","doi":"10.1109/16.960389","title":"InP/GaAsSb/InP double HBTs: a new alternative for InP-based DHBTs","year":2001,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Semiconductor Quantum Structures and Devices","field":"Physics and Astronomy","cited_by":73,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Simon Fraser University","funders":"","keywords":"Cutoff frequency; Materials science; Optoelectronics; Bipolar junction transistor; Heterojunction bipolar transistor; Indium phosphide; Metalorganic vapour phase epitaxy; Gallium arsenide; Heterojunction; Oscillation (cell signaling); Indium gallium arsenide; Voltage; Transistor; Electrical engineering; Epitaxy; Chemistry; Nanotechnology","score_opus":0.025400076237402237,"score_gpt":0.2955764601981051,"score_spread":0.2701763839607028,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2099689722","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.7236623,0.00026619897,0.27257958,0.0005339755,0.00068467023,0.0007375324,0.00009407738,0.000142671,0.0012989619],"genre_scores_gemma":[0.9974173,0.00001633259,0.00046816486,0.00049242657,0.0005551924,0.00017105002,0.000047342775,0.000055807202,0.00077643234],"study_design_codex":"design_other","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9982035,0.000036954672,0.00036486506,0.00048150442,0.000266839,0.0006463451],"domain_scores_gemma":[0.9989607,0.00018217652,0.00020179788,0.0003454314,0.00011016576,0.00019978397],"candidate_categories":["metaepi_narrow","insufficient_payload"],"consensus_categories":[],"category_scores_codex":[0.000094055344,0.0003937457,0.00036658964,0.00021619209,0.00039731053,0.00019025424,0.00034056522,0.000098355435,0.0014173618],"category_scores_gemma":[5.916627e-7,0.0003573753,0.00030420616,0.00037875902,0.000058017828,0.0003676143,0.0000013156005,0.00034773743,0.0000722434],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.019113991,0.0076748063,0.036926124,0.00075924466,0.009664325,0.00004960198,0.010342277,0.32636943,0.1445416,0.048872486,0.031293698,0.3643924],"study_design_scores_gemma":[0.011033426,0.0016197829,0.0006202101,0.0001942749,0.0005313918,0.00001218834,0.0009223041,0.022133702,0.8358245,0.012934518,0.112489425,0.0016842831],"about_ca_topic_score_codex":0.0032997525,"about_ca_topic_score_gemma":0.00096672744,"teacher_disagreement_score":0.69128287,"about_ca_system_score_codex":0.00008711892,"about_ca_system_score_gemma":0.00032773762,"threshold_uncertainty_score":0.9998878},"labels":[],"label_agreement":null},{"id":"W2100166869","doi":"10.1109/ted.2002.804728","title":"Closed-form breakdown voltage model for PD SOI NMOS devices considering impact ionization of both parasitic BJT and surface MOS channel simultaneously","year":2002,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Semiconductor materials and devices","field":"Engineering","cited_by":2,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"NMOS logic; Impact ionization; Bipolar junction transistor; Breakdown voltage; Materials science; Silicon on insulator; Subthreshold conduction; Optoelectronics; MOSFET; Voltage; Electrostatic discharge; Ionization; Electrical engineering; Transistor; Silicon; Chemistry; Engineering; Ion","score_opus":0.018686485374297047,"score_gpt":0.2430595354790643,"score_spread":0.22437305010476727,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2100166869","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.8797777,0.0012939541,0.11774112,0.000025478375,0.00018341048,0.0004896478,0.00015527238,0.00027140317,0.00006198317],"genre_scores_gemma":[0.99871916,0.0005042533,0.00042413824,0.00006554706,0.00004826281,0.00004291153,0.00001267708,0.00008259475,0.0001004397],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9984951,0.000021127937,0.00045455463,0.0003285502,0.00019524996,0.00050541206],"domain_scores_gemma":[0.99918556,0.00025017856,0.00012135237,0.00022683074,0.00009585531,0.000120218014],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.00012292425,0.00036961044,0.0004373504,0.0001520254,0.00018750103,0.00010369788,0.00013908546,0.00017178862,0.00008384437],"category_scores_gemma":[0.0000057387365,0.0003531793,0.00012063508,0.00021457157,0.000050370087,0.00048449828,0.0000010282799,0.0001619918,0.000008397661],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00004863442,0.00007673044,0.0000688534,0.0004192457,0.00015685117,0.0000013423492,0.00076174224,0.81789845,0.17926091,0.000013062317,0.00004094797,0.0012532403],"study_design_scores_gemma":[0.00053338567,0.00019826872,0.000091605965,0.000085830405,0.000111317335,0.000019795458,0.00008777057,0.8118449,0.1865424,0.00010701787,0.0000460119,0.00033172593],"about_ca_topic_score_codex":0.00017372644,"about_ca_topic_score_gemma":0.00073237903,"teacher_disagreement_score":0.11894145,"about_ca_system_score_codex":0.000099148805,"about_ca_system_score_gemma":0.000028663537,"threshold_uncertainty_score":0.999892},"labels":[],"label_agreement":null},{"id":"W2101234418","doi":"10.1109/ted.2005.856192","title":"Reset and Partition Noise in Active Pixel Image Sensors","year":2005,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"CCD and CMOS Imaging Sensors","field":"Engineering","cited_by":12,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Reset (finance); Transistor; Noise (video); Partition (number theory); Pixel; Electronic engineering; Computer science; Noise measurement; Flicker noise; Noise generator; Noise floor; Electrical engineering; Engineering; Artificial intelligence; Mathematics; CMOS; Noise figure; Noise reduction; Voltage; Image (mathematics)","score_opus":0.005939933650472447,"score_gpt":0.22740322822646042,"score_spread":0.22146329457598798,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2101234418","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99004483,0.00015144738,0.007500216,0.00041248847,0.00008469077,0.00012811577,0.000018301662,0.0002425539,0.0014173355],"genre_scores_gemma":[0.99913317,0.00026231195,0.00028702372,0.00007300696,0.000047074824,0.00002471271,0.0000026942141,0.000028398676,0.00014159434],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99921703,0.00002934924,0.0001543185,0.00018678696,0.00010979454,0.00030269267],"domain_scores_gemma":[0.9997334,0.00005059504,0.000016677062,0.00012377319,0.000017725206,0.00005785422],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0000625605,0.00015203406,0.00013262854,0.00018739796,0.00006784142,0.00003748473,0.000052976528,0.00005911542,0.000051307958],"category_scores_gemma":[0.0000015693421,0.00016237998,0.00003692224,0.00021873265,0.000035927984,0.00034155187,3.0372607e-7,0.0003047008,0.00006457149],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00027412202,0.0004013684,0.00016013508,0.00016844095,0.00016251499,0.000020436662,0.0030080369,0.34491917,0.5103092,0.00008707895,0.0007588154,0.13973066],"study_design_scores_gemma":[0.0009881102,0.00012978121,0.0037514642,0.00008371091,0.000052440708,0.00003753642,0.00029084575,0.093103066,0.8916783,0.000102454134,0.009260204,0.00052212353],"about_ca_topic_score_codex":0.000030269144,"about_ca_topic_score_gemma":0.0011251267,"teacher_disagreement_score":0.38136902,"about_ca_system_score_codex":0.000113034854,"about_ca_system_score_gemma":0.000009810831,"threshold_uncertainty_score":0.6621663},"labels":[],"label_agreement":null},{"id":"W2101373995","doi":"10.1109/ted.2003.813460","title":"Super-junction LDMOST on a silicon-on-sapphire substrate","year":2003,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Silicon Carbide Semiconductor Technologies","field":"Engineering","cited_by":106,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Toronto","funders":"","keywords":"Materials science; Breakdown voltage; Silicon; Optoelectronics; Electric field; Substrate (aquarium); Silicon on sapphire; CMOS; Sapphire; Voltage; Electrical engineering; Depletion region; Integrated circuit; Silicon on insulator; Semiconductor; Optics; Physics; Engineering","score_opus":0.013292015394084075,"score_gpt":0.22139225514788385,"score_spread":0.20810023975379977,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2101373995","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99003285,0.0003185374,0.001077884,0.00013682283,0.0010150005,0.0003167936,0.000015690699,0.0020773476,0.0050090733],"genre_scores_gemma":[0.99901265,0.00022876816,0.00002586933,0.00021199479,0.000042951728,0.00012719455,0.000003902308,0.00009055349,0.00025610792],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99828964,0.000053373515,0.00030460992,0.00045765642,0.00028761593,0.0006071275],"domain_scores_gemma":[0.9991006,0.00018293515,0.00003924844,0.0005425152,0.000044615088,0.000090078975],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.000119316086,0.00042451214,0.0002915442,0.00042085184,0.00017280634,0.00007054915,0.00024045451,0.0002953888,0.00018645899],"category_scores_gemma":[0.000013266068,0.00042477367,0.00015638702,0.00060672604,0.00007075837,0.00024421632,3.8504444e-7,0.0008216732,0.00041664543],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00011439745,0.0003319629,0.00015644013,0.00009998867,0.00033727352,0.000018042643,0.00024326348,0.14683655,0.832541,0.0018830211,0.001008654,0.016429424],"study_design_scores_gemma":[0.00045988997,0.00050417084,0.00022484247,0.000049190734,0.000043397893,0.000024467558,0.00025878687,0.0019360892,0.9930419,0.0001641822,0.002848166,0.00044496363],"about_ca_topic_score_codex":0.000023100965,"about_ca_topic_score_gemma":0.00024641422,"teacher_disagreement_score":0.16050087,"about_ca_system_score_codex":0.000290872,"about_ca_system_score_gemma":0.000039975228,"threshold_uncertainty_score":0.9998204},"labels":[],"label_agreement":null},{"id":"W2103144569","doi":"10.1109/ted.2005.845818","title":"Second Harmonic Operation at 460 GHz and Broadband Continuous Frequency Tuning of a Gyrotron Oscillator","year":2005,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Gyrotron and Vacuum Electronics Research","field":"Physics and Astronomy","cited_by":206,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Gyrotron; Physics; Microwave; Cyclotron resonance; Resonator; Magnetic field; Microsecond; Optics; Electron cyclotron resonance; Nuclear magnetic resonance; Cyclotron; Electrical engineering; Atomic physics; Electron; Engineering","score_opus":0.011526386055902463,"score_gpt":0.2680864754133071,"score_spread":0.25656008935740465,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2103144569","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9815875,0.0009492599,0.014257997,0.00030352696,0.000055999397,0.0004148979,0.00004736938,0.000043776556,0.0023396262],"genre_scores_gemma":[0.996832,0.00007371724,0.00026669123,0.000055611883,0.00009256769,0.00007630824,0.0000125016295,0.000034628833,0.00255597],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99827605,0.000092617316,0.0003584314,0.00040566202,0.0002742836,0.0005929608],"domain_scores_gemma":[0.9993157,0.000076758304,0.00012276358,0.0002513323,0.00009089799,0.0001425975],"candidate_categories":["metaepi_narrow","insufficient_payload"],"consensus_categories":[],"category_scores_codex":[0.00019196553,0.0002566869,0.00032454834,0.00019395702,0.0003416502,0.00007896593,0.00017145147,0.00008186591,0.002000588],"category_scores_gemma":[8.9600974e-7,0.00024876406,0.00012307568,0.00020859405,0.0000741504,0.00033633105,0.000003282125,0.00043639212,0.000056822562],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00027818308,0.0006198099,0.004535184,0.000098404795,0.00049991737,0.0000012878546,0.00086643605,0.0018632672,0.92713857,0.002558474,0.00042162297,0.061118837],"study_design_scores_gemma":[0.0018126055,0.00077891175,0.0010193159,0.000042368225,0.00008246841,0.00000793779,0.000121424295,0.005998877,0.9819097,0.00022621559,0.0075856387,0.00041455668],"about_ca_topic_score_codex":0.0001987491,"about_ca_topic_score_gemma":0.0011953257,"teacher_disagreement_score":0.06070428,"about_ca_system_score_codex":0.00016384761,"about_ca_system_score_gemma":0.00015779145,"threshold_uncertainty_score":0.9999965},"labels":[],"label_agreement":null},{"id":"W2103592858","doi":"10.1109/16.925264","title":"Post-processed Cu inductors with application to a completely integrated 2-GHz VCO","year":2001,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Radio Frequency Integrated Circuit Design","field":"Engineering","cited_by":38,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Nortel (Canada); STMicroelectronics (Canada); Carleton University","funders":"","keywords":"Inductor; Voltage-controlled oscillator; Materials science; Phase noise; dBc; Electronic circuit; Optoelectronics; Offset (computer science); Electrical engineering; Polyimide; Voltage; Electronic engineering; Layer (electronics); Engineering; CMOS; Computer science; Nanotechnology","score_opus":0.010414285330572301,"score_gpt":0.22145622155701344,"score_spread":0.21104193622644113,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2103592858","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.50970316,0.00010037947,0.48597664,0.000180712,0.00013434168,0.0005394835,0.000025530178,0.0009178969,0.0024218687],"genre_scores_gemma":[0.9986047,0.00004698344,0.00031886747,0.0003275056,0.000043271193,0.00039114346,0.000022976328,0.00010058796,0.00014395692],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.998361,0.000042163083,0.00032015107,0.00041702169,0.00029817666,0.00056151586],"domain_scores_gemma":[0.9990895,0.00006296026,0.000049005044,0.00038342952,0.00023007514,0.00018508013],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.00009286734,0.00038531848,0.00029068414,0.0004556392,0.00016515095,0.00010270906,0.00034585144,0.00015435704,0.00010367593],"category_scores_gemma":[0.0000034577165,0.00034108746,0.00006545337,0.0016592671,0.00004117898,0.00040666477,9.998231e-8,0.00058716856,0.0002633868],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00018239547,0.0001728513,0.000082870865,0.0000655226,0.00027405922,0.0000149019215,0.00060424604,0.24763228,0.7139873,0.00009330545,0.00018503063,0.036705263],"study_design_scores_gemma":[0.0006441184,0.00115154,0.0005375235,0.00012416457,0.00013136888,0.00016058289,0.00048263388,0.018637223,0.9705281,0.00008558688,0.0066250516,0.0008920943],"about_ca_topic_score_codex":0.00046481713,"about_ca_topic_score_gemma":0.0026995447,"teacher_disagreement_score":0.48890156,"about_ca_system_score_codex":0.0004034674,"about_ca_system_score_gemma":0.000105054896,"threshold_uncertainty_score":0.9999041},"labels":[],"label_agreement":null},{"id":"W2105854516","doi":"10.1109/ted.2007.902867","title":"A Self-Consistent Full 3-D Real-Space NEGF Simulator for Studying Nonperturbative Effects in Nano-MOSFETs","year":2007,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":146,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Physics; Discretization; Quantum simulator; Nanowire; Computation; Non-equilibrium thermodynamics; Topology (electrical circuits); Quantum computer; Quantum; Statistical physics; Quantum mechanics; Computational physics; Algorithm; Computer science; Mathematics; Mathematical analysis","score_opus":0.012556831209082488,"score_gpt":0.2583139032396246,"score_spread":0.24575707203054212,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2105854516","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.5069064,0.0009333769,0.48900273,0.00002027854,0.0007366301,0.0013290388,0.000011524672,0.00044805717,0.0006119801],"genre_scores_gemma":[0.9972624,0.00022513431,0.0018920404,0.00011484052,0.00007413093,0.00022869714,0.0000035417022,0.00008454143,0.000114630246],"study_design_codex":"simulation_or_modeling","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99810994,0.000043558095,0.0004204356,0.0004215065,0.00024498807,0.00075954635],"domain_scores_gemma":[0.99872607,0.0007318993,0.000074878546,0.00027839898,0.00006744882,0.000121284866],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.0003213597,0.0003686136,0.0003758674,0.00027967626,0.00016917572,0.0000422476,0.00019627514,0.00015417679,0.000014288664],"category_scores_gemma":[0.0000046594187,0.00037616323,0.00013577344,0.00045235653,0.00002438896,0.0003082821,8.3441415e-7,0.00033241982,0.000016697883],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00067675405,0.0013878174,0.000568906,0.0020000155,0.0014522657,0.000055913995,0.0071907397,0.4996174,0.43086573,0.0008529807,0.00013313082,0.055198338],"study_design_scores_gemma":[0.0058049033,0.0022198488,0.0009187602,0.00052383816,0.00044688533,0.000027616205,0.0015384918,0.11574933,0.8606294,0.00045921173,0.009757715,0.00192402],"about_ca_topic_score_codex":0.000023765147,"about_ca_topic_score_gemma":0.0007301471,"teacher_disagreement_score":0.49035606,"about_ca_system_score_codex":0.00052710366,"about_ca_system_score_gemma":0.000038529386,"threshold_uncertainty_score":0.99986905},"labels":[],"label_agreement":null},{"id":"W2107065006","doi":"10.1109/16.841219","title":"An analytic model for estimating the length of the velocity saturated region in GaAs MESFETs","year":2000,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Silicon Carbide Semiconductor Technologies","field":"Engineering","cited_by":4,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Calgary","funders":"CMC Microsystems","keywords":"Classification of discontinuities; Saturation (graph theory); Velocity saturation; Range (aeronautics); Saturation velocity; Channel (broadcasting); Mechanics; Work (physics); Computational physics; Materials science; Physics; Statistical physics; Mathematics; Engineering; Transistor; Mathematical analysis; Thermodynamics; Electrical engineering; Voltage; MOSFET","score_opus":0.019592357452728443,"score_gpt":0.25455057042542045,"score_spread":0.234958212972692,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2107065006","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9700262,0.00013715039,0.02888342,0.0001659476,0.0000892821,0.00033926984,0.000007971086,0.0002863116,0.000064468164],"genre_scores_gemma":[0.9992262,0.000042153737,0.00054372184,0.000041988238,0.000011003853,0.00006746407,9.895825e-7,0.000026703203,0.000039770202],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9991768,0.00003416046,0.00023833248,0.00017591481,0.00011582739,0.0002589477],"domain_scores_gemma":[0.99940115,0.00010978227,0.000041407617,0.00039989353,0.000030111358,0.000017680408],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00011899737,0.00015365281,0.00016812289,0.000103143786,0.00010131036,0.000020293059,0.0003572761,0.00011345789,0.000008855487],"category_scores_gemma":[0.0000066195767,0.00010539788,0.00008466015,0.00046874853,0.00006505621,0.00017900324,4.2825712e-7,0.00035423617,0.000001343497],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000017434637,0.000024523939,0.00002100723,0.000025471503,0.00003197718,1.5898964e-7,0.0002919538,0.9389258,0.038890976,0.000015666512,0.000017427557,0.021737585],"study_design_scores_gemma":[0.00015837571,0.000038264843,0.00023921474,0.000029219887,0.00003060114,0.000003709479,0.000067893074,0.7935623,0.2055405,0.0002303421,0.000006924185,0.00009267255],"about_ca_topic_score_codex":0.000059342146,"about_ca_topic_score_gemma":0.00092153077,"teacher_disagreement_score":0.1666495,"about_ca_system_score_codex":0.0001177767,"about_ca_system_score_gemma":0.000032949905,"threshold_uncertainty_score":0.42980006},"labels":[],"label_agreement":null},{"id":"W2107291033","doi":"10.1109/ted.2005.843884","title":"Analysis and Circuit Modeling of Waveguide-Separated Absorption Charge Multiplication-Avalanche Photodetector (WG-SACM-APD)","year":2005,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Photonic and Optical Devices","field":"Engineering","cited_by":23,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McMaster University","funders":"","keywords":"Photodetector; Avalanche photodiode; Optoelectronics; Parasitic extraction; Equivalent circuit; Materials science; Absorption (acoustics); Resistor; Electronic engineering; Optics; Voltage; Electrical engineering; Physics; Detector; Engineering","score_opus":0.013046409323323831,"score_gpt":0.23537081969940354,"score_spread":0.22232441037607972,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2107291033","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.7149988,0.0007011397,0.28251302,0.00003262653,0.000050910698,0.00020052501,0.000031404357,0.00023196274,0.0012396412],"genre_scores_gemma":[0.9986684,0.0007004934,0.00035343086,0.00004623996,0.000032701573,0.0000681107,0.000012101719,0.00003145955,0.00008706148],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9987285,0.000025698399,0.0004121571,0.00029931669,0.00020362111,0.0003307033],"domain_scores_gemma":[0.9994114,0.00007463438,0.00006183407,0.00026947635,0.000079348625,0.000103289356],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00014090145,0.00022594955,0.00034076843,0.00034591736,0.00009475561,0.000031646843,0.0001400165,0.00013804062,0.00016316788],"category_scores_gemma":[0.000002605229,0.0002250358,0.00014837713,0.00070780516,0.000031278152,0.0002472235,7.615094e-7,0.000249118,0.000051770738],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000038397226,0.00011726803,0.000076329496,0.000103400154,0.0008323999,3.737156e-7,0.00029900356,0.8217904,0.1673222,0.00008036661,0.000003709837,0.009336129],"study_design_scores_gemma":[0.00022717754,0.000037796013,0.00023745121,0.000015617623,0.0003059007,0.0000015540212,0.000013309754,0.7378028,0.26103422,0.000015509382,0.00013586412,0.00017278807],"about_ca_topic_score_codex":0.000081821934,"about_ca_topic_score_gemma":0.00061308715,"teacher_disagreement_score":0.28366962,"about_ca_system_score_codex":0.00009889449,"about_ca_system_score_gemma":0.000020500098,"threshold_uncertainty_score":0.91766936},"labels":[],"label_agreement":null},{"id":"W2107751407","doi":"10.1109/ted.2004.837389","title":"Electrical Characterization of Polymer-Based FETs Fabricated by Spin-Coating Poly(3-alkylthiophene)s","year":2004,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Organic Electronics and Photovoltaics","field":"Engineering","cited_by":60,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Simon Fraser University; McMaster University","funders":"","keywords":"Thin-film transistor; Materials science; Dopant; Spin coating; Subthreshold conduction; Optoelectronics; Subthreshold slope; Threshold voltage; Polymer; Electron mobility; Coating; Transistor; Doping; Equivalent series resistance; Field-effect transistor; Layer (electronics); Voltage; Composite material; Electrical engineering","score_opus":0.005557771822796633,"score_gpt":0.2100609144899498,"score_spread":0.20450314266715316,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2107751407","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.7680768,0.0008878461,0.22991191,0.00018469986,0.00016057739,0.00023036663,0.000052474752,0.00036899958,0.00012636551],"genre_scores_gemma":[0.99933517,0.00018221085,0.00006922783,0.00016016568,0.00003520738,0.000033657056,0.000048147856,0.00008231386,0.00005392184],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99838126,0.000032049826,0.00043372414,0.000285236,0.00028778086,0.0005799719],"domain_scores_gemma":[0.9994283,0.000046368445,0.000110433415,0.0002478562,0.00005741329,0.00010966074],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.00009363108,0.00029678977,0.00030089196,0.00023094285,0.00014320074,0.000035969406,0.00020925677,0.00018519514,0.00006137928],"category_scores_gemma":[0.0000016785207,0.00032343293,0.00011886519,0.0009026431,0.000028900506,0.00015780368,5.633566e-7,0.0004769623,0.000021116482],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000033533863,0.00017262925,0.000010921919,0.000043309854,0.00006718484,9.118909e-7,0.000049872368,0.0044202404,0.9915895,0.000084659645,0.000009248655,0.0035180193],"study_design_scores_gemma":[0.00064362393,0.00044478083,0.00007520311,0.00003734904,0.00005634042,0.000005558934,0.0000039384645,0.0074802595,0.9906941,0.000029687277,0.0002231723,0.00030598714],"about_ca_topic_score_codex":0.00011000752,"about_ca_topic_score_gemma":0.000076073404,"teacher_disagreement_score":0.23125839,"about_ca_system_score_codex":0.00029648092,"about_ca_system_score_gemma":0.00015934686,"threshold_uncertainty_score":0.9999218},"labels":[],"label_agreement":null},{"id":"W2107985063","doi":"10.1109/ted.2003.818156","title":"Above-threshold parameter extraction and modeling for amorphous silicon thin-film transistors","year":2003,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":127,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Thin-film transistor; Amorphous silicon; Materials science; Threshold voltage; Optoelectronics; Transistor; Extraction (chemistry); Saturation (graph theory); Amorphous solid; Fabrication; Silicon; Electron mobility; Band gap; Contact resistance; Oxide thin-film transistor; Electronic engineering; Voltage; Layer (electronics); Crystalline silicon; Electrical engineering; Nanotechnology; Engineering","score_opus":0.017928914903172742,"score_gpt":0.24111920915638876,"score_spread":0.22319029425321602,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2107985063","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.5154103,0.0014321429,0.48084143,0.00006840619,0.0004675517,0.0004086988,0.000022097784,0.0011166203,0.0002327351],"genre_scores_gemma":[0.9958527,0.00051301834,0.0030733962,0.000073241536,0.00002224513,0.0002548801,0.0000032325088,0.00010848695,0.00009877063],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99835753,0.000029534738,0.00037832037,0.00045673194,0.00020441342,0.00057348824],"domain_scores_gemma":[0.99931204,0.00016475421,0.00004227697,0.00034051988,0.00004763979,0.00009277838],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.00017999567,0.0003967457,0.00034599905,0.0003350939,0.0002520163,0.000073218725,0.00016454534,0.00032352938,0.000027193055],"category_scores_gemma":[0.00000774335,0.000421839,0.00018224765,0.0002732027,0.00006489409,0.00042658995,2.590537e-7,0.00059337064,0.000009651272],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00008324943,0.000116846444,0.000016847089,0.00020245879,0.00018494498,0.000002961189,0.00037096534,0.92683667,0.06570539,0.00035899173,0.000080874815,0.0060397824],"study_design_scores_gemma":[0.00086586835,0.00029974504,0.00003268624,0.000052994546,0.00022209699,0.000046078098,0.00022861976,0.5100792,0.48349163,0.0008492121,0.0031669696,0.0006648811],"about_ca_topic_score_codex":0.000030081901,"about_ca_topic_score_gemma":0.00047015562,"teacher_disagreement_score":0.4804424,"about_ca_system_score_codex":0.0002029292,"about_ca_system_score_gemma":0.000029228044,"threshold_uncertainty_score":0.99982333},"labels":[],"label_agreement":null},{"id":"W2109163158","doi":"10.1109/ted.2007.910615","title":"Simulation of a Low-Voltage Organic Transistor Compatible With Printing Methods","year":2008,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Organic Electronics and Photovoltaics","field":"Engineering","cited_by":24,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of British Columbia","funders":"","keywords":"Organic field-effect transistor; Materials science; Transistor; Semiconductor; Organic semiconductor; Optoelectronics; Amorphous solid; Electronic circuit; Layer (electronics); Field-effect transistor; Voltage; Nanotechnology; Electrical engineering; Chemistry; Organic chemistry","score_opus":0.012415116643606066,"score_gpt":0.25125929113437095,"score_spread":0.2388441744907649,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2109163158","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.47333694,0.0001741149,0.5260017,0.000005847914,0.00005696532,0.00013566678,0.0000038009052,0.00015585635,0.00012913703],"genre_scores_gemma":[0.9974912,0.00011022525,0.0021925673,0.000022360553,0.000021585598,0.0000152134,0.000002538356,0.00006822647,0.000076093216],"study_design_codex":"simulation_or_modeling","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9989092,0.000041393458,0.0002996136,0.00020502222,0.00019639984,0.00034842145],"domain_scores_gemma":[0.99936867,0.00019987412,0.0000654743,0.00022882185,0.0000737349,0.00006340282],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00013845724,0.00021725905,0.0002847252,0.00016442356,0.00015236264,0.000011327933,0.00013400549,0.00009263872,0.0001220543],"category_scores_gemma":[0.0000022314296,0.00020772307,0.000079971585,0.0005721857,0.000039551596,0.00014815335,3.4103698e-7,0.00036344005,0.000008507822],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000032786174,0.000076149416,0.000034189503,0.00010952526,0.00009949858,0.0000014100945,0.00040382764,0.555034,0.44292274,0.000010350622,0.000002937792,0.0012726081],"study_design_scores_gemma":[0.00034360623,0.00027266942,0.00010086427,0.00003739135,0.000051033654,0.000010280238,0.000018688053,0.16769867,0.83091074,0.00001534021,0.00034078636,0.00019993997],"about_ca_topic_score_codex":0.000025671205,"about_ca_topic_score_gemma":0.00034132527,"teacher_disagreement_score":0.52415425,"about_ca_system_score_codex":0.00012298411,"about_ca_system_score_gemma":0.00008578595,"threshold_uncertainty_score":0.8470701},"labels":[],"label_agreement":null},{"id":"W2109212063","doi":"10.1109/ted.2008.925148","title":"Ultralow Temperature Processing and Integration of Dielectric Resonators on Silicon Substrates for System-on-Chip Applications","year":2008,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Microwave Dielectric Ceramics Synthesis","field":"Engineering","cited_by":6,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Queen's University; Royal Military College of Canada","funders":"","keywords":"Materials science; Dielectric; Ceramic; Silicon; Recrystallization (geology); Grain boundary; Resonator; Dielectric resonator; Temperature coefficient; Microstructure; Optoelectronics; Electronic engineering; Composite material; Engineering","score_opus":0.008626649605692302,"score_gpt":0.21488953091458285,"score_spread":0.20626288130889053,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2109212063","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9148196,0.0011703011,0.08189195,0.000044172542,0.00007078558,0.0009882334,0.00005020151,0.00035014158,0.00061460066],"genre_scores_gemma":[0.9987245,0.0003331386,0.00030368532,0.000028136941,0.000044571083,0.00043623283,0.00001213391,0.000058246125,0.000059321905],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99883014,0.00003130849,0.00032082398,0.00032001565,0.00016874826,0.00032896455],"domain_scores_gemma":[0.9992728,0.0002922079,0.00007872117,0.0001972615,0.00009575989,0.000063234314],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.000100973186,0.00027534377,0.00027959302,0.00038558594,0.00027830643,0.000034881432,0.00012516805,0.0001488967,0.0000034226052],"category_scores_gemma":[0.0000055880632,0.0002617601,0.00008730525,0.00059995847,0.00004111243,0.00011960907,1.5742928e-7,0.00034571753,0.000004379771],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00018738174,0.0002069134,0.00002234341,0.0005996611,0.00012078767,8.000026e-7,0.00029831944,0.016430197,0.94640064,0.00078630395,0.000052795873,0.034893878],"study_design_scores_gemma":[0.00030393264,0.0005494683,0.00022581084,0.00012502461,0.00005961434,0.000014859546,0.00007345887,0.020728813,0.9775267,0.000053741307,0.00009328513,0.00024526723],"about_ca_topic_score_codex":0.00001126572,"about_ca_topic_score_gemma":0.00007966902,"teacher_disagreement_score":0.083904915,"about_ca_system_score_codex":0.0001787108,"about_ca_system_score_gemma":0.000053209966,"threshold_uncertainty_score":0.9999835},"labels":[],"label_agreement":null},{"id":"W2109589489","doi":"10.1109/ted.2007.915085","title":"Physical Model of Noise Mechanisms in SOI and Bulk-Silicon MOSFETs for RF Applications","year":2008,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Radio Frequency Integrated Circuit Design","field":"Engineering","cited_by":19,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Hatch (Canada)","funders":"","keywords":"Silicon on insulator; Shot noise; Transconductance; Noise (video); Impact ionization; Optoelectronics; Flicker noise; Materials science; Noise generator; Burst noise; Y-factor; MOSFET; Noise power; Noise temperature; Voltage; Electrical engineering; Silicon; Noise figure; Transistor; Physics; Engineering; CMOS; Ionization; Power (physics); Phase noise; Computer science","score_opus":0.015752506495484198,"score_gpt":0.23032289965784122,"score_spread":0.21457039316235701,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2109589489","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.30039692,0.00014124435,0.69832736,0.000023523547,0.000030136844,0.00046612055,0.000040202827,0.00012781506,0.00044668652],"genre_scores_gemma":[0.9984748,0.00016698785,0.00055547827,0.000022138152,0.000015723728,0.00067398616,0.000003359809,0.000039996252,0.000047558577],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9991647,0.000011870695,0.00022035459,0.00021867464,0.00011629647,0.00026812343],"domain_scores_gemma":[0.99959904,0.00008339386,0.000030189763,0.00018986834,0.00004196183,0.000055534696],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000054685013,0.00017524321,0.00023185622,0.00018913591,0.000074959724,0.000007868384,0.00012255696,0.000094150164,0.0000035357878],"category_scores_gemma":[0.0000011265585,0.00018581054,0.0000712915,0.00026177874,0.00004400693,0.00015354305,7.5750826e-8,0.0002184828,0.000004680148],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000012038779,0.000101033096,0.000002119972,0.000051747204,0.000032877564,3.7085368e-7,0.00021215303,0.4464608,0.5491867,0.001108289,0.000010221642,0.0028216315],"study_design_scores_gemma":[0.00024852194,0.00008818957,0.0000122679085,0.000013408841,0.000025188076,0.000007180054,0.000014608964,0.36571997,0.63106,0.00266789,0.000016877,0.000125918],"about_ca_topic_score_codex":0.000033043543,"about_ca_topic_score_gemma":0.00014091615,"teacher_disagreement_score":0.69807786,"about_ca_system_score_codex":0.000097844466,"about_ca_system_score_gemma":0.000046715097,"threshold_uncertainty_score":0.7577134},"labels":[],"label_agreement":null},{"id":"W2110567646","doi":"10.1109/ted.2006.873843","title":"Three-dimensional modeling and simulation of p-n junction spherical silicon solar cells","year":2006,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"solar cell performance optimization","field":"Engineering","cited_by":32,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Morgan Solar (Canada); University of Waterloo","funders":"","keywords":"Materials science; Spherical geometry; Silicon; Fabrication; Solar cell; Photovoltaic system; Spherical model; Optoelectronics; Energy conversion efficiency; Quantum efficiency; Computer simulation; Spherical shell; Voltage; Spherical cap; Geometry; Physics; Mechanics; Electrical engineering; Engineering; Condensed matter physics","score_opus":0.007385828608175575,"score_gpt":0.20338251290248754,"score_spread":0.19599668429431197,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2110567646","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.44996738,0.000102771446,0.54956234,0.0000045737584,0.00011384753,0.0000844629,0.0000015475878,0.00009872653,0.0000643731],"genre_scores_gemma":[0.9969102,0.000044080753,0.0029319732,0.000010012408,0.000042582327,0.000009940107,0.0000067419573,0.000030495163,0.000013954938],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99923927,0.000011489729,0.0002385765,0.00016028612,0.00016634539,0.00018401831],"domain_scores_gemma":[0.9997395,0.00004033655,0.00003620035,0.00010651563,0.0000488068,0.000028589493],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00006708692,0.00014304862,0.00013782112,0.00011506947,0.00008809712,0.000018579878,0.00003773568,0.00010188402,0.00004105309],"category_scores_gemma":[4.5867785e-7,0.00015263578,0.000044584813,0.00019130696,0.000018693187,0.0002839456,3.9213376e-7,0.000168117,0.0000114664435],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000028149063,0.000038378435,0.00003939604,0.000033796063,0.00001635225,1.6317783e-7,0.000014328485,0.9574961,0.039783962,0.000001517031,0.000007074034,0.0025407977],"study_design_scores_gemma":[0.00021863748,0.00007039519,0.00009497103,0.000014971214,0.000033465894,0.000001462742,0.0000046031196,0.88180614,0.11756817,0.000036251822,0.000027271915,0.0001236863],"about_ca_topic_score_codex":0.00011725671,"about_ca_topic_score_gemma":0.00038858823,"teacher_disagreement_score":0.54694283,"about_ca_system_score_codex":0.0000622014,"about_ca_system_score_gemma":0.0000126672685,"threshold_uncertainty_score":0.6224307},"labels":[],"label_agreement":null},{"id":"W2111013026","doi":"10.1109/16.848285","title":"Time dependent breakdown of ultrathin gate oxide","year":2000,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Semiconductor materials and devices","field":"Engineering","cited_by":62,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Advanced Micro Devices (Canada)","funders":"","keywords":"Time-dependent gate oxide breakdown; Materials science; Gate oxide; Dielectric strength; Oxide; Electric field; Condensed matter physics; Dielectric; Dipole; Electrical engineering; Analytical Chemistry (journal); Voltage; Optoelectronics; Physics; Chemistry; Transistor","score_opus":0.005304018404544097,"score_gpt":0.1999673098684662,"score_spread":0.1946632914639221,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2111013026","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9958277,0.00041084745,0.0008928938,0.00002011269,0.0001959645,0.0001277422,0.000040530387,0.00032699644,0.002157237],"genre_scores_gemma":[0.9985342,0.00032372453,0.00008882061,0.000063380365,0.00003580196,0.000020799396,0.000004198444,0.00003915183,0.0008899141],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99898213,0.000031548196,0.00030470977,0.00019116042,0.0001848008,0.00030567657],"domain_scores_gemma":[0.99960285,0.000049544586,0.000034618053,0.0002209112,0.00002453577,0.00006753529],"candidate_categories":["insufficient_payload"],"consensus_categories":[],"category_scores_codex":[0.00009910504,0.00020184455,0.00024798984,0.00010227054,0.000058163267,0.000033555272,0.00016669782,0.00009757457,0.0029227182],"category_scores_gemma":[4.8537487e-7,0.00019215328,0.000086887856,0.00016479872,0.000032417498,0.00021450594,2.0116846e-7,0.00015895528,0.00047827399],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000046226873,0.000068975634,0.0000040718296,0.00006812382,0.000097945696,0.0000023591795,0.00014824643,0.13089217,0.8646718,0.0000047313356,0.00013680606,0.003858497],"study_design_scores_gemma":[0.00025434914,0.00009307601,0.00011285691,0.000039738792,0.000049913586,0.000020876088,0.000020713584,0.0034152104,0.99430037,0.00002988837,0.0014418159,0.0002211864],"about_ca_topic_score_codex":0.00012751731,"about_ca_topic_score_gemma":0.00016159259,"teacher_disagreement_score":0.12962854,"about_ca_system_score_codex":0.00004489635,"about_ca_system_score_gemma":0.00001888005,"threshold_uncertainty_score":0.99798876},"labels":[],"label_agreement":null},{"id":"W2111213652","doi":"10.1109/ted.2003.813241","title":"Effects of hot-carrier stress on the performance of the lc-tank cmos oscillators","year":2003,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Radio Frequency Integrated Circuit Design","field":"Engineering","cited_by":56,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McMaster University","funders":"CMC Microsystems","keywords":"Oscillation (cell signaling); CMOS; Materials science; Stress (linguistics); Amplitude; Noise (video); Phase noise; LC circuit; Optoelectronics; Electrical engineering; Degradation (telecommunications); Voltage; Physics; Engineering; Capacitor; Chemistry; Optics; Computer science","score_opus":0.00556460967544677,"score_gpt":0.1884604072520457,"score_spread":0.1828957975765989,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2111213652","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9921816,0.00045808984,0.0027263793,0.00002410393,0.0005395891,0.00042449098,0.00001845284,0.00008401043,0.003543282],"genre_scores_gemma":[0.9995653,0.00017022737,0.0000075517455,0.000043461197,0.000013131206,0.00006445755,2.2492638e-7,0.000037825972,0.00009782462],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9988292,0.00013243758,0.00026178485,0.00016333722,0.0003069237,0.0003063286],"domain_scores_gemma":[0.9991242,0.00029637196,0.00007525807,0.00041174123,0.00005364479,0.000038750408],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00014851977,0.00022035188,0.00021158937,0.00010287325,0.00012540024,0.000011934441,0.00030364457,0.00010589592,0.000049512026],"category_scores_gemma":[0.000010142507,0.00013712798,0.00013731468,0.0005789538,0.00008985537,0.0001010826,8.842642e-8,0.00045943857,0.000009341103],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000044270288,0.00017193984,0.0004908044,0.0005248308,0.0004949029,0.0000015808783,0.0006962189,0.43610874,0.5559118,0.0020684532,0.0001757096,0.0033107705],"study_design_scores_gemma":[0.00016425601,0.00021522334,0.00058590446,0.00016769662,0.00007267855,0.0000042209335,0.0000417901,0.0020927244,0.9961994,0.00002451824,0.00029338847,0.00013819945],"about_ca_topic_score_codex":0.000021390146,"about_ca_topic_score_gemma":0.00005284207,"teacher_disagreement_score":0.44028762,"about_ca_system_score_codex":0.000119002245,"about_ca_system_score_gemma":0.000059645547,"threshold_uncertainty_score":0.5591917},"labels":[],"label_agreement":null},{"id":"W2112551460","doi":"10.1109/ted.2005.850637","title":"Accurate Modeling and Parameter Extraction for Meander-Line N-Well Resistors","year":2005,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Radio Frequency Integrated Circuit Design","field":"Engineering","cited_by":16,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McMaster University","funders":"CMC Microsystems","keywords":"Resistor; Equivalent circuit; Inductor; Electronic engineering; Meander (mathematics); Scalability; Electrical impedance; Distributed element model; Finite element method; Engineering; Computer science; Electrical engineering; Mathematics; Voltage; Structural engineering; Geometry","score_opus":0.026777354880300377,"score_gpt":0.26554754394103597,"score_spread":0.2387701890607356,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2112551460","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.17360522,0.0008343519,0.82357186,0.00013196892,0.00026431517,0.00032202934,0.000011597551,0.0004065873,0.0008520606],"genre_scores_gemma":[0.9977473,0.00045542806,0.0011037859,0.000077557226,0.00010593372,0.00015370105,0.0000044241406,0.000066019384,0.0002858339],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99884874,0.000029435721,0.00030664034,0.00028658376,0.00013748954,0.00039114163],"domain_scores_gemma":[0.9994635,0.00016473373,0.000036598325,0.00019194948,0.000057650177,0.00008559169],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.00015142707,0.0002490797,0.00020354748,0.00021416388,0.00015820508,0.000064970234,0.00010512926,0.0001530547,0.000039224735],"category_scores_gemma":[0.000004502818,0.00024975877,0.000092516515,0.00018110173,0.000020680573,0.0004913914,5.1505438e-8,0.00035159232,0.000028091643],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000044178545,0.000035924615,5.6002506e-7,0.00004213961,0.000094017116,6.921496e-7,0.00010833684,0.9291988,0.050504047,0.000030548315,0.00012556104,0.019815184],"study_design_scores_gemma":[0.0003035636,0.00012777606,0.0000032683179,0.000026478607,0.00008313894,0.000017812863,0.000035388566,0.6965952,0.30097896,0.00016762078,0.0014249975,0.00023576831],"about_ca_topic_score_codex":0.000027166625,"about_ca_topic_score_gemma":0.00038492284,"teacher_disagreement_score":0.8241421,"about_ca_system_score_codex":0.00025080267,"about_ca_system_score_gemma":0.000025274352,"threshold_uncertainty_score":0.99999547},"labels":[],"label_agreement":null},{"id":"W2116326546","doi":"10.1109/ted.2008.922856","title":"A Statistical Reliability Model for Single-Electron Threshold Logic","year":2008,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Semiconductor materials and devices","field":"Engineering","cited_by":18,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Windsor","funders":"","keywords":"NAND logic; Logic gate; Digital electronics; Reliability (semiconductor); NAND gate; Computer science; AND-OR-Invert; Pass transistor logic; AND gate; Electronic engineering; Set (abstract data type); Logic synthesis; NOR gate; Logic optimization; Reliability engineering; Computer engineering; Electronic circuit; Power (physics); Algorithm; Engineering; Electrical engineering; Physics","score_opus":0.036356871965358514,"score_gpt":0.25852431966920447,"score_spread":0.22216744770384594,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2116326546","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.6016093,0.00025232715,0.39650378,0.000047628968,0.0002861289,0.00031173826,0.00008724458,0.00044823298,0.00045363663],"genre_scores_gemma":[0.99690264,0.00014081421,0.0023639451,0.00015877308,0.00007320331,0.00016675399,0.000015286003,0.000060298415,0.00011826216],"study_design_codex":"simulation_or_modeling","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9985337,0.000021900622,0.00033149577,0.00035651113,0.00019285572,0.0005635207],"domain_scores_gemma":[0.99937356,0.00014869928,0.000037413414,0.0002751443,0.00006232261,0.0001028456],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.00011954474,0.00027859717,0.0003081138,0.0001028803,0.00020357092,0.000042061267,0.00016775692,0.00014721035,0.000079337864],"category_scores_gemma":[0.00000460693,0.00026161864,0.000108418404,0.00014855005,0.000064241074,0.0002318251,5.6778515e-7,0.00023159111,0.000030395136],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00022633238,0.00032810008,0.000025295949,0.00024419176,0.000097504344,0.0000043306163,0.000268775,0.51006246,0.48687565,0.0005805921,0.00072237296,0.0005643685],"study_design_scores_gemma":[0.0005127049,0.00047277214,0.000057940048,0.00001943416,0.000071937524,0.000036873185,0.000013582151,0.3692725,0.62653226,0.0020001065,0.00057911064,0.00043077487],"about_ca_topic_score_codex":0.000017885794,"about_ca_topic_score_gemma":0.000119323726,"teacher_disagreement_score":0.39529335,"about_ca_system_score_codex":0.000165373,"about_ca_system_score_gemma":0.000051711115,"threshold_uncertainty_score":0.9999836},"labels":[],"label_agreement":null},{"id":"W2120551123","doi":"10.1109/ted.2006.881012","title":"Equivalent Circuit Description of Threshold Voltage Shift in a-Si:H TFTs From a Probabilistic Analysis of Carrier Population Dynamics","year":2006,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":11,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Thin-film transistor; Threshold voltage; Probabilistic logic; Amorphous silicon; Population; Optoelectronics; Transistor; Biasing; Electronic circuit; Materials science; Logic gate; Electrical engineering; Electronic engineering; Computer science; Voltage; Engineering; Silicon; Nanotechnology; Artificial intelligence","score_opus":0.013263610191436433,"score_gpt":0.21538362012513626,"score_spread":0.20212000993369983,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2120551123","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.7890731,0.00028114908,0.20977542,0.000011367945,0.00010894999,0.00021227988,0.00020694519,0.00023979261,0.000091016314],"genre_scores_gemma":[0.99965304,0.000031138872,0.00013274104,0.0000032400023,0.0000080526925,0.000046373258,0.000079605525,0.000032048574,0.000013740458],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9985582,0.0000257502,0.00058484037,0.0002726958,0.00027739597,0.00028108814],"domain_scores_gemma":[0.99939895,0.00006707582,0.00010655172,0.00036101663,0.000041806128,0.000024609373],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00010960656,0.00021878831,0.00045379568,0.0009460749,0.000035099914,0.000016343749,0.00019732257,0.00020190608,0.000031084695],"category_scores_gemma":[0.0000032707987,0.00024240548,0.00019371456,0.0013597138,0.000054755514,0.00022133102,7.3381136e-7,0.00028715702,0.0000012078507],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":true,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00003165704,0.00016873503,0.012566074,0.00015198532,0.00036725315,0.000001958338,0.0002500069,0.92180026,0.062783875,0.00077341724,0.0000021092842,0.0011026907],"study_design_scores_gemma":[0.00076996366,0.00020382345,0.39317465,0.00018310224,0.0019404443,0.0000011288039,0.00019664573,0.47527274,0.1203846,0.00723391,0.000014215955,0.00062477856],"about_ca_topic_score_codex":0.0029382778,"about_ca_topic_score_gemma":0.08369923,"teacher_disagreement_score":0.44652748,"about_ca_system_score_codex":0.00051351474,"about_ca_system_score_gemma":0.000018153785,"threshold_uncertainty_score":0.98850083},"labels":[],"label_agreement":null},{"id":"W2121108957","doi":"10.1109/ted.2002.805605","title":"A new model for avalanche build-up of carriers in a SAGCM avalanche photodiode","year":2002,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Semiconductor Quantum Structures and Devices","field":"Physics and Astronomy","cited_by":7,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McMaster University","funders":"Hong Kong University of Science and Technology","keywords":"Avalanche photodiode; Single-photon avalanche diode; Impact ionization; Avalanche breakdown; Avalanche diode; Optoelectronics; Charge carrier; Physics; Ionization; Materials science; Optics; Breakdown voltage; Voltage; Detector; Quantum mechanics","score_opus":0.020767856967467222,"score_gpt":0.2617161488237025,"score_spread":0.24094829185623526,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2121108957","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.8086058,0.00057222095,0.18877111,0.00014215254,0.0003128534,0.00054415147,0.00016765954,0.00005248478,0.00083155115],"genre_scores_gemma":[0.99734247,0.00002901084,0.0012396509,0.0000977832,0.00009926432,0.00008676934,0.000008034303,0.000035587822,0.0010614289],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99856293,0.000030060588,0.0003754755,0.00037406187,0.00018933565,0.00046813194],"domain_scores_gemma":[0.9992802,0.00010683917,0.0001527659,0.00029335052,0.00004849492,0.0001183195],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.00008286195,0.0002679272,0.00037843417,0.00018928287,0.00009845743,0.000031860025,0.000241628,0.00009180854,0.0005495913],"category_scores_gemma":[0.0000011855157,0.00025091044,0.00023810979,0.0002812972,0.000033622244,0.0001848967,0.0000010027734,0.00028811136,0.000009244319],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0020044113,0.0020168966,0.015610169,0.00090978405,0.0025845808,0.000005212661,0.028237814,0.35012543,0.38314697,0.0129960235,0.015193028,0.18716967],"study_design_scores_gemma":[0.004187629,0.00043415168,0.00022507968,0.00013056153,0.0002484664,0.000003960958,0.00080515345,0.39306262,0.5913548,0.0063043702,0.002421623,0.0008216004],"about_ca_topic_score_codex":0.0007249361,"about_ca_topic_score_gemma":0.00046170843,"teacher_disagreement_score":0.2082078,"about_ca_system_score_codex":0.000048998656,"about_ca_system_score_gemma":0.00009043437,"threshold_uncertainty_score":0.99999434},"labels":[],"label_agreement":null},{"id":"W2122876757","doi":"10.1109/ted.2003.811392","title":"Modeling and optimization of resonant cavity enhanced-separated absorption graded charge multiplication-avalanche photodetector (RCE-SAGCM-APD)","year":2003,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Photonic and Optical Devices","field":"Engineering","cited_by":25,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McMaster University","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Photodetector; Spice; Avalanche photodiode; Multiplication (music); Optoelectronics; Inductance; Absorption (acoustics); Materials science; Inductor; Bandwidth (computing); Equivalent series resistance; Capacitance; Optics; Physics; Electronic engineering; Voltage; Computer science; Telecommunications; Engineering; Detector; Acoustics","score_opus":0.011104001217795268,"score_gpt":0.2297460845352172,"score_spread":0.21864208331742194,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2122876757","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.53875244,0.0005383375,0.45983833,0.0000091624015,0.00009447773,0.0002591952,0.000014796743,0.00016829983,0.00032499718],"genre_scores_gemma":[0.9969738,0.0011996552,0.0015939719,0.000024195886,0.000012851541,0.00010174679,0.000009586971,0.000037990536,0.000046186375],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99878407,0.000052524556,0.0003541162,0.00029721428,0.00018716085,0.0003249164],"domain_scores_gemma":[0.9994788,0.00006803248,0.000057587065,0.00021638324,0.00008543597,0.00009374624],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00015073817,0.00022992236,0.00026276227,0.0001434952,0.00012156887,0.000027130298,0.00009622922,0.00015354907,0.00007336398],"category_scores_gemma":[0.000006717596,0.00022662451,0.000069604735,0.00033913815,0.00003560406,0.00023930855,5.4416284e-7,0.0002611265,0.000014473189],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000036884845,0.00006881897,0.0000041166304,0.000082592116,0.000050619183,2.0581128e-7,0.00015704101,0.8205783,0.17799102,0.000079044104,0.000001475182,0.00094989507],"study_design_scores_gemma":[0.00028313042,0.000054540043,0.000021125838,0.00003063238,0.00003469398,0.0000020114687,0.000018524723,0.5848615,0.41449142,0.000021193297,0.000037400303,0.0001437959],"about_ca_topic_score_codex":0.000056320307,"about_ca_topic_score_gemma":0.00015444258,"teacher_disagreement_score":0.45824435,"about_ca_system_score_codex":0.00009283466,"about_ca_system_score_gemma":0.000032109045,"threshold_uncertainty_score":0.9241479},"labels":[],"label_agreement":null},{"id":"W2123140212","doi":"10.1109/ted.2004.841224","title":"Study of CMOS APS responsivity enhancement: ring-shaped photodiode","year":2004,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"CCD and CMOS Imaging Sensors","field":"Engineering","cited_by":4,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Calgary","funders":"","keywords":"Photodiode; Responsivity; CMOS; Pixel; Sensitivity (control systems); Optoelectronics; CMOS sensor; Materials science; RADIUS; Optics; Wavelength; Image sensor; Ring (chemistry); Physics; Photodetector; Electronic engineering; Computer science; Engineering; Chemistry","score_opus":0.011095653001364912,"score_gpt":0.2439830655386257,"score_spread":0.23288741253726078,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2123140212","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.95838547,0.00011969649,0.03998937,0.000035985086,0.00022442524,0.0003280193,0.000007246985,0.00029225144,0.00061754225],"genre_scores_gemma":[0.99953437,0.000055132845,0.00012471572,0.000036741705,0.00002307523,0.000052681542,9.546344e-7,0.000037376296,0.0001349699],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99885505,0.000038976556,0.0002772221,0.00023795103,0.00025340947,0.00033740496],"domain_scores_gemma":[0.99950856,0.000052041105,0.000043629752,0.00029660188,0.000039305673,0.000059849368],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00011258763,0.0002116124,0.000240432,0.0001935395,0.00011439642,0.000024366102,0.00015795376,0.000053814576,0.00005701216],"category_scores_gemma":[0.000002067973,0.00022163802,0.00007950468,0.00037014656,0.000027832042,0.00015194209,6.061165e-7,0.00029700095,0.000044717664],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00029510556,0.0023501064,0.00009372427,0.00015116709,0.0005319798,0.000024565708,0.0056884293,0.4112846,0.5711791,0.000038871945,0.000027446295,0.008334937],"study_design_scores_gemma":[0.0014718511,0.00067774305,0.0006097399,0.0000579251,0.00009828709,0.000009551498,0.00045971188,0.0020410393,0.99393624,0.000040488827,0.0003061783,0.00029126013],"about_ca_topic_score_codex":0.0001351507,"about_ca_topic_score_gemma":0.0011968961,"teacher_disagreement_score":0.42275715,"about_ca_system_score_codex":0.00014750236,"about_ca_system_score_gemma":0.000032061434,"threshold_uncertainty_score":0.9038136},"labels":[],"label_agreement":null},{"id":"W2123757351","doi":"10.1109/ted.2011.2109961","title":"Fin- and Island-Isolated AlGaN/GaN HFETs","year":2011,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":19,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Concordia University","funders":"CMC Microsystems","keywords":"Transconductance; Materials science; Optoelectronics; Threshold voltage; Transistor; Heterojunction; Voltage; Electrical engineering; Engineering","score_opus":0.015221579729899267,"score_gpt":0.2326695754073626,"score_spread":0.21744799567746334,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2123757351","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.97812384,0.000097722885,0.017964007,0.0000517669,0.00030764233,0.00021215758,0.000068409485,0.000089008936,0.0030854668],"genre_scores_gemma":[0.9991533,0.000022006308,0.000092060705,0.00013084454,0.000076852455,0.000036234724,0.000012026954,0.000030358962,0.00044629013],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99892837,0.00005084415,0.00023462933,0.00031786104,0.00010140985,0.0003669095],"domain_scores_gemma":[0.99951375,0.000037824302,0.00009302171,0.00020983495,0.00004085277,0.000104699255],"candidate_categories":["insufficient_payload"],"consensus_categories":[],"category_scores_codex":[0.0000838411,0.00023157746,0.00023406856,0.000099331555,0.00018537349,0.000057001227,0.00013356993,0.000066684515,0.0018976231],"category_scores_gemma":[2.6861892e-7,0.00020677577,0.00008251629,0.0001339886,0.000040156432,0.00019754432,8.114876e-7,0.0001914872,0.00009159564],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0011753971,0.0025579303,0.010076358,0.00029878467,0.0020896601,0.000022105716,0.008696598,0.00044711668,0.89216256,0.005018514,0.0011315942,0.07632335],"study_design_scores_gemma":[0.0010036282,0.00059878506,0.0015796375,0.00005690979,0.00019625328,0.0000075904168,0.00027280668,0.00043746643,0.99012834,0.001351651,0.003808915,0.0005579888],"about_ca_topic_score_codex":0.0007666587,"about_ca_topic_score_gemma":0.00036461474,"teacher_disagreement_score":0.09796578,"about_ca_system_score_codex":0.0000112921,"about_ca_system_score_gemma":0.000040173472,"threshold_uncertainty_score":0.9990148},"labels":[],"label_agreement":null},{"id":"W2124176512","doi":"10.1109/ted.2008.2003027","title":"Thermodynamics and Transport Model of Charge Injection in Silicon Irradiated by a Pulsed Focused Laser","year":2008,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Silicon and Solar Cell Technologies","field":"Engineering","cited_by":2,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Polytechnique Montréal","funders":"Canada Research Chairs; CMC Microsystems","keywords":"Laser; Materials science; Laser power scaling; Silicon; Ring oscillator; Optoelectronics; Atomic physics; Physics; Optics","score_opus":0.010339245390348377,"score_gpt":0.19512364613490193,"score_spread":0.18478440074455355,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2124176512","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9839305,0.00029991893,0.0149208475,0.000020691523,0.000043352327,0.00018223019,0.000028031902,0.00030496556,0.0002694472],"genre_scores_gemma":[0.9987729,0.0010133898,0.00003597573,0.000020944448,0.0000026400157,0.0000394795,0.0000048675047,0.000031214142,0.000078584584],"study_design_codex":"bench_or_experimental","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.999231,0.000015244476,0.0002282673,0.00018067886,0.000102880294,0.00024192453],"domain_scores_gemma":[0.9997538,0.000024135856,0.000027864415,0.0001473302,0.000012613886,0.00003430802],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00005612385,0.00017100725,0.00021772232,0.00024690502,0.00005510525,0.000004630871,0.00008949009,0.0001807121,0.000013461416],"category_scores_gemma":[8.277987e-7,0.00017713771,0.000052773637,0.0003074756,0.000053590906,0.000120307246,2.3141966e-7,0.00030303228,0.0000025352413],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00010775831,0.00022915375,0.0012293862,0.00009515615,0.000087092645,0.000003181803,0.00089550985,0.35657912,0.6323528,0.000019465719,0.000017560727,0.008383752],"study_design_scores_gemma":[0.0006199687,0.0001345253,0.0017350483,0.000015636204,0.000016541298,0.000005746186,0.00003883215,0.61294794,0.38425943,0.00003202176,0.000017092112,0.00017723186],"about_ca_topic_score_codex":0.0000862157,"about_ca_topic_score_gemma":0.0007918666,"teacher_disagreement_score":0.2563688,"about_ca_system_score_codex":0.000065304805,"about_ca_system_score_gemma":0.000020052486,"threshold_uncertainty_score":0.72234666},"labels":[],"label_agreement":null},{"id":"W2124693169","doi":"10.1109/ted.2003.809029","title":"UV-responsive CCD image sensors with enhanced inorganic phosphor coatings","year":2003,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"CCD and CMOS Imaging Sensors","field":"Engineering","cited_by":26,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Dalsa Corporation; University of Waterloo","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Phosphor; Materials science; Optoelectronics; Coating; Ultraviolet; Irradiation; Absorption (acoustics); Laser; Radiation; Degradation (telecommunications); Optics; Nanotechnology; Electronic engineering; Composite material","score_opus":0.0037047170403858775,"score_gpt":0.20046497109599729,"score_spread":0.1967602540556114,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2124693169","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.90121895,0.00017023015,0.0951836,0.000074256706,0.00021485773,0.00022247195,0.000010363917,0.0006196626,0.0022856002],"genre_scores_gemma":[0.9977163,0.00009181231,0.0011624489,0.00012481824,0.000022725691,0.000036637888,0.0000017565851,0.00009217887,0.0007513138],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99863243,0.00005801442,0.00022640216,0.00031571975,0.00023308615,0.0005343632],"domain_scores_gemma":[0.9993639,0.0001223793,0.0000466262,0.00027722586,0.00008378574,0.0001060896],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.000090349735,0.00032040768,0.00025100392,0.00016226959,0.00018097968,0.00007261341,0.00012575365,0.00008360974,0.0002300702],"category_scores_gemma":[0.000006667938,0.00030102962,0.00008079275,0.00053078093,0.00006367068,0.00023675422,2.8293385e-7,0.00045171083,0.00019464627],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00017903495,0.00012141033,0.000015261681,0.00007300659,0.00017272474,0.000018713947,0.0012254743,0.043486174,0.95192266,0.000047908157,0.00023337052,0.0025042414],"study_design_scores_gemma":[0.0005660527,0.0002396701,0.000060351224,0.000045015997,0.00007279984,0.00005373355,0.00038897755,0.001335075,0.99549997,0.00001765147,0.0013255988,0.00039512003],"about_ca_topic_score_codex":0.000023351482,"about_ca_topic_score_gemma":0.00022998975,"teacher_disagreement_score":0.09649735,"about_ca_system_score_codex":0.00014246402,"about_ca_system_score_gemma":0.000058006048,"threshold_uncertainty_score":0.9999442},"labels":[],"label_agreement":null},{"id":"W2125167480","doi":"10.1109/ted.2006.877007","title":"New Superjunction LDMOST With N-Buffer Layer","year":2006,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Silicon Carbide Semiconductor Technologies","field":"Engineering","cited_by":45,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"York University; University of Toronto","funders":"","keywords":"Buffer (optical fiber); CMOS; Layer (electronics); Substrate (aquarium); Materials science; Optoelectronics; MOSFET; Process (computing); Compensation (psychology); Electronic engineering; Electrical engineering; Computer science; Nanotechnology; Voltage; Engineering; Transistor","score_opus":0.007403110919509995,"score_gpt":0.19768494751175128,"score_spread":0.1902818365922413,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2125167480","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9289504,0.00049212854,0.06522606,0.00016564243,0.0004014413,0.00019085401,0.0000057406123,0.0023300773,0.0022376364],"genre_scores_gemma":[0.99841005,0.00004760156,0.00037304297,0.000049396447,0.00008995466,0.00003826185,0.0000038674566,0.00006350618,0.0009243045],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99898577,0.00001163789,0.00017566682,0.00025016122,0.000193871,0.00038290038],"domain_scores_gemma":[0.99956554,0.000042592204,0.000020845795,0.0002913099,0.000031980675,0.00004774411],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000035496916,0.00024962283,0.00017803091,0.00023003074,0.000080656566,0.000052497,0.0001588157,0.00015547023,0.0001766279],"category_scores_gemma":[7.3176057e-7,0.00022219736,0.00006415444,0.0004381846,0.00003224837,0.00028441442,3.5428582e-7,0.00038022152,0.000121722675],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000067666915,0.00007374112,0.00067972095,0.000047223122,0.00017504788,0.000008545869,0.000068129535,0.15711111,0.8161982,0.00023378628,0.0055461535,0.019790648],"study_design_scores_gemma":[0.00042059075,0.00018838284,0.00092204375,0.000022940543,0.000059302685,0.000032890614,0.000059228358,0.0023890655,0.9909919,0.00012216385,0.0044608084,0.0003306715],"about_ca_topic_score_codex":0.00033562773,"about_ca_topic_score_gemma":0.0021463186,"teacher_disagreement_score":0.17479369,"about_ca_system_score_codex":0.0001569978,"about_ca_system_score_gemma":0.000034739645,"threshold_uncertainty_score":0.9060945},"labels":[],"label_agreement":null},{"id":"W2125277991","doi":"10.1109/ted.2004.838452","title":"Stability Analysis of Current Programmed a-Si:H AMOLED Pixel Circuits","year":2004,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":29,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"AMOLED; Pixel; Electronic circuit; Brightness; Transistor; Current (fluid); Thin-film transistor; Electronic engineering; Diode; Stability (learning theory); Optoelectronics; Current mirror; Computer science; Materials science; Electrical engineering; Engineering; Optics; Physics; Voltage; Artificial intelligence; Active matrix; Nanotechnology","score_opus":0.020621817597021263,"score_gpt":0.2511571305375792,"score_spread":0.23053531294055796,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2125277991","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.67377526,0.00083709287,0.3237221,0.000039349023,0.00020832881,0.00026887917,0.000038614908,0.0010387017,0.00007170983],"genre_scores_gemma":[0.9993051,0.00017609996,0.00033613967,0.0000082282495,0.000008491654,0.00011933805,0.000007724435,0.000034985125,0.0000038934136],"study_design_codex":"simulation_or_modeling","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.998425,0.000031082185,0.00043323432,0.0003393073,0.00031098112,0.00046040255],"domain_scores_gemma":[0.99920684,0.000058233876,0.00006560186,0.0005156114,0.00008073698,0.00007297709],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.00014173919,0.00027629582,0.0004667309,0.00061866554,0.0000803399,0.00002478379,0.00031469334,0.00014995104,0.000044549888],"category_scores_gemma":[0.0000046146533,0.00028281458,0.0003305947,0.0020056511,0.00010931972,0.00017649116,6.0576804e-7,0.00049096515,0.000012525054],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000053762073,0.001420943,0.00065761426,0.0006203465,0.0038571842,0.000003120687,0.0013476784,0.5534789,0.276796,0.00040810838,0.0000094452635,0.16134693],"study_design_scores_gemma":[0.00068201765,0.00023101947,0.004118822,0.000053296575,0.0015729853,0.0000018670579,0.00012878665,0.0037464697,0.98819125,0.00021926033,0.0006010185,0.00045320025],"about_ca_topic_score_codex":0.00005449488,"about_ca_topic_score_gemma":0.002375079,"teacher_disagreement_score":0.71139526,"about_ca_system_score_codex":0.00036373068,"about_ca_system_score_gemma":0.000056435067,"threshold_uncertainty_score":0.9999624},"labels":[],"label_agreement":null},{"id":"W2127106059","doi":"10.1109/ted.2008.926744","title":"Two-Transistor Active Pixel Sensor Readout Circuits in Amorphous Silicon Technology for High-Resolution Digital Imaging Applications","year":2008,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"CCD and CMOS Imaging Sensors","field":"Engineering","cited_by":27,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Pixel; Dot pitch; Transistor; Image resolution; Image sensor; Materials science; CMOS sensor; CMOS; Noise (video); Optoelectronics; Electronic engineering; Computer science; Optics; Electrical engineering; Physics; Voltage; Engineering; Artificial intelligence","score_opus":0.006820580533054084,"score_gpt":0.21482537305702504,"score_spread":0.20800479252397094,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2127106059","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.49739262,0.0003372783,0.4990356,0.0005611877,0.0001779563,0.0008272253,0.00014810574,0.0010802866,0.00043974168],"genre_scores_gemma":[0.9987881,0.00007886528,0.00041376232,0.00007142806,0.00006978955,0.00041037635,0.00001993694,0.00007372993,0.000073989875],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9986674,0.000014174395,0.00029411493,0.00038752015,0.00014074681,0.0004960454],"domain_scores_gemma":[0.9994844,0.00008982971,0.00004819035,0.0002409104,0.00006166407,0.00007497428],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.00003442902,0.0002685279,0.00027270342,0.00043826495,0.00020737363,0.000033434804,0.00016578064,0.00009891942,0.0000070662086],"category_scores_gemma":[0.0000035771911,0.00031447434,0.0000996099,0.00062723167,0.000103336366,0.00033168594,6.0396223e-7,0.00040050133,0.000045419252],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00025443535,0.0006897568,0.00048163082,0.0002503509,0.0003102477,0.00003193004,0.0014428945,0.20128472,0.5372595,0.0005652661,0.00019985107,0.2572294],"study_design_scores_gemma":[0.004975237,0.00042029054,0.0019732413,0.00014655765,0.00024554555,0.00042957204,0.0009945516,0.08823443,0.8838108,0.00078979274,0.016016392,0.0019635523],"about_ca_topic_score_codex":0.000042602536,"about_ca_topic_score_gemma":0.00022181976,"teacher_disagreement_score":0.5013955,"about_ca_system_score_codex":0.00029523618,"about_ca_system_score_gemma":0.00004504213,"threshold_uncertainty_score":0.99993074},"labels":[],"label_agreement":null},{"id":"W2127311650","doi":"10.1109/16.987126","title":"Diffusion current and its effect on noise in submicron MOSFETs","year":2002,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Semiconductor materials and devices","field":"Engineering","cited_by":25,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Shot noise; MOSFET; Flicker noise; Noise (video); Burst noise; Noise generator; Materials science; Field-effect transistor; Optoelectronics; Transistor; Diffusion current; Diffusion; Electronic engineering; Current (fluid); Electrical engineering; Noise figure; Physics; Engineering; Computer science; CMOS","score_opus":0.011492811232707274,"score_gpt":0.2270236832464446,"score_spread":0.21553087201373733,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2127311650","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99412453,0.004321947,0.00013187931,0.000032054813,0.0006767126,0.00024704932,0.000011175045,0.00019949122,0.00025514685],"genre_scores_gemma":[0.99800825,0.0017709298,0.000004166198,0.00003911791,0.000050740295,0.0000513138,0.00000198388,0.00003503958,0.000038460847],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9990312,0.00004985436,0.00020048262,0.00025361907,0.00013653903,0.0003282962],"domain_scores_gemma":[0.9996701,0.00008663448,0.000024676405,0.00013756583,0.000010796168,0.00007020999],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00008447161,0.00023804749,0.00022676891,0.00021026701,0.0000698109,0.000050825525,0.000090344176,0.00008759564,0.00017049507],"category_scores_gemma":[0.0000015200587,0.00021323012,0.0000450775,0.00018155972,0.000011332351,0.00017529952,6.381322e-7,0.00026480627,0.00012297706],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000072095034,0.00020661714,0.00016863277,0.0003433701,0.00002985356,0.0000050052918,0.000291646,0.00678106,0.95197654,0.000013870493,0.00008822667,0.0400231],"study_design_scores_gemma":[0.0008501698,0.0004687964,0.0016896697,0.00019919564,0.000031875377,0.000009032827,0.000008880258,0.019440485,0.9752431,0.000009874607,0.0016994652,0.00034948913],"about_ca_topic_score_codex":0.00001861912,"about_ca_topic_score_gemma":0.00015134327,"teacher_disagreement_score":0.039673608,"about_ca_system_score_codex":0.0000811738,"about_ca_system_score_gemma":0.0000030334622,"threshold_uncertainty_score":0.86952716},"labels":[],"label_agreement":null},{"id":"W2129515555","doi":"10.1109/ted.2010.2093770","title":"Laser-Induced Resistance Fine Tuning of Integrated Polysilicon Thin-Film Resistors","year":2010,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":12,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Polytechnique Montréal","funders":"Canada Research Chairs","keywords":"Materials science; Resistor; Polysilicon depletion effect; Optoelectronics; Fluence; Thin film; Raman spectroscopy; Laser; Optics; Transistor; Electrical engineering; Voltage; Nanotechnology; Gate oxide","score_opus":0.008154485192180396,"score_gpt":0.2143452573957264,"score_spread":0.206190772203546,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2129515555","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9816581,0.0002732798,0.013891304,0.00018241818,0.000788118,0.00021702038,0.000060113096,0.0017578106,0.0011718627],"genre_scores_gemma":[0.9977578,0.000051423795,0.0014312115,0.000023283848,0.000025308058,0.0000495581,0.0000067568108,0.00007899174,0.0005756559],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9983988,0.000040109328,0.00045168144,0.00034941832,0.00028285754,0.00047712494],"domain_scores_gemma":[0.99897414,0.0001356942,0.00009414739,0.0006267139,0.00009083314,0.00007848438],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.00017925948,0.0003550533,0.00039519137,0.0004966052,0.00015418972,0.000029916502,0.00047125347,0.00033640044,0.00011105607],"category_scores_gemma":[0.000014403268,0.00035917346,0.00016311013,0.00081767444,0.000109873436,0.00026304228,9.597725e-7,0.0013307038,0.000025394509],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00006314375,0.000085083164,0.000033549113,0.000099219316,0.00013343465,0.0000046044215,0.00021509976,0.007994556,0.9829466,0.00013450632,0.00020859062,0.008081645],"study_design_scores_gemma":[0.00034487262,0.00011158704,0.00025713677,0.00007890882,0.0000765691,0.0000043088053,0.000112355614,0.006674657,0.9886051,0.00006601822,0.0033196674,0.00034885792],"about_ca_topic_score_codex":0.00013803052,"about_ca_topic_score_gemma":0.014660778,"teacher_disagreement_score":0.016099738,"about_ca_system_score_codex":0.00015749858,"about_ca_system_score_gemma":0.0000715375,"threshold_uncertainty_score":0.99988604},"labels":[],"label_agreement":null},{"id":"W2130519062","doi":"10.1109/ted.2004.838450","title":"Analytical Modeling of MOSFETs Channel Noise and Noise Parameters","year":2004,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Radio Frequency Integrated Circuit Design","field":"Engineering","cited_by":106,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McMaster University","funders":"","keywords":"Noise (video); MOSFET; Electronic engineering; Flicker noise; Noise measurement; Channel (broadcasting); Noise generator; Simple (philosophy); Noise figure; Computer science; Electrical engineering; Physics; Engineering; Acoustics; Voltage; Noise reduction; Transistor; CMOS","score_opus":0.01741106713836432,"score_gpt":0.22808613108646167,"score_spread":0.21067506394809735,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2130519062","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.52854997,0.00041094073,0.46970442,0.000052879368,0.00012111369,0.00014225098,0.000010971427,0.00018919591,0.0008182498],"genre_scores_gemma":[0.99926275,0.00027659864,0.00031557915,0.00004006417,0.000013594237,0.000031841093,0.0000014466082,0.000043647146,0.00001445794],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99889255,0.000021325763,0.00029760273,0.00023963818,0.0001866083,0.00036226033],"domain_scores_gemma":[0.99955267,0.00004555907,0.000026210899,0.00021572123,0.000047412992,0.00011245321],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00009183494,0.00022621271,0.00026137932,0.00020323781,0.000063374915,0.000026575384,0.0001337612,0.0001281642,0.000013973463],"category_scores_gemma":[0.0000029638172,0.00022818099,0.00009090254,0.00035631104,0.00005177956,0.0002190553,8.633024e-8,0.00035511624,0.00001855044],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000016287313,0.000051607578,0.000003501228,0.00004747848,0.000115350114,0.0000041035487,0.00018748626,0.97361505,0.024251774,0.00009543169,0.0000042135334,0.0016077284],"study_design_scores_gemma":[0.0004020436,0.00017219063,0.00001555433,0.00007623739,0.00010401399,0.00002562073,0.00005914029,0.6297181,0.36849028,0.0006942885,0.000006815444,0.00023572137],"about_ca_topic_score_codex":0.00015610288,"about_ca_topic_score_gemma":0.00010323018,"teacher_disagreement_score":0.4707128,"about_ca_system_score_codex":0.00017555722,"about_ca_system_score_gemma":0.00004346238,"threshold_uncertainty_score":0.9304951},"labels":[],"label_agreement":null},{"id":"W2132293560","doi":"10.1109/ted.2002.806968","title":"Amorphous silicon active pixel sensor readout circuit for digital imaging","year":2003,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"CCD and CMOS Imaging Sensors","field":"Engineering","cited_by":121,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Sunnybrook Health Science Centre; University of Toronto; University of Waterloo","funders":"","keywords":"Noise (video); Amplifier; Pixel; Optoelectronics; Detector; Materials science; Electrical engineering; Image sensor; Linearity; Fixed-pattern noise; Electronic circuit; Electronic engineering; Physics; CMOS; Computer science; Optics; Engineering; Artificial intelligence","score_opus":0.008685714028059954,"score_gpt":0.21539534390476237,"score_spread":0.2067096298767024,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2132293560","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.596345,0.00036454338,0.39068368,0.00012549602,0.00086945546,0.00062780594,0.0001567989,0.0012617451,0.009565463],"genre_scores_gemma":[0.998807,0.00003380348,0.00014721465,0.00010568608,0.000055843426,0.0000695973,0.0000069932776,0.000093272174,0.0006805932],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99870664,0.000020296977,0.00022581434,0.00032158176,0.00016122335,0.0005644367],"domain_scores_gemma":[0.99941397,0.00014754196,0.00003757636,0.0002455365,0.000056187735,0.00009919466],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.000061993545,0.00028828927,0.00023051996,0.00017568239,0.00017441972,0.0001384206,0.00011767915,0.00006670881,0.000042808184],"category_scores_gemma":[0.0000070834203,0.00031036962,0.000168337,0.00023176536,0.000042677013,0.0004052155,2.4613288e-7,0.0002961568,0.000074252035],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00032711917,0.00081684336,0.00036276277,0.000531089,0.0011252583,0.000037718262,0.002731124,0.14616308,0.4882287,0.0009432501,0.0013846677,0.35734838],"study_design_scores_gemma":[0.0013864717,0.00018756173,0.00018101875,0.000080449754,0.00017946381,0.00015880966,0.00067734794,0.01707001,0.93845457,0.0004586074,0.04014118,0.0010244962],"about_ca_topic_score_codex":0.00000988058,"about_ca_topic_score_gemma":0.000040042712,"teacher_disagreement_score":0.45022586,"about_ca_system_score_codex":0.00017410364,"about_ca_system_score_gemma":0.000034192268,"threshold_uncertainty_score":0.99993485},"labels":[],"label_agreement":null},{"id":"W2132361787","doi":"10.1109/ted.2009.2030642","title":"Very Low Dark Current CCD Image Sensor","year":2009,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"CCD and CMOS Imaging Sensors","field":"Engineering","cited_by":20,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Dalsa Corporation","funders":"","keywords":"Dark current; Pixel; Physics; Current (fluid); Image (mathematics); Diffusion; Charge-coupled device; Phase (matter); Optoelectronics; Optics; Computer science; Artificial intelligence; Photodetector; Quantum mechanics","score_opus":0.005548320584680253,"score_gpt":0.230170861869601,"score_spread":0.22462254128492076,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2132361787","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.8628115,0.0015542874,0.12678379,0.00047834284,0.0015206963,0.00029536505,0.0000331122,0.0017639474,0.0047589815],"genre_scores_gemma":[0.9988796,0.00035320164,0.0002785305,0.00014348824,0.000107474676,0.000009650418,0.0000035839837,0.000035733872,0.00018872818],"study_design_codex":"design_other","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9988878,0.000023253624,0.00020228814,0.00023655401,0.00019397527,0.00045616465],"domain_scores_gemma":[0.9995594,0.000038905542,0.000022938806,0.00025345755,0.000032259395,0.00009302454],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.000056188343,0.00024296992,0.00018847863,0.00016258884,0.00012174548,0.00007332243,0.00013966867,0.00005725903,0.00006530568],"category_scores_gemma":[0.0000012153401,0.0002492405,0.00012476323,0.00027930367,0.000026386322,0.00024250265,2.015285e-7,0.00043721191,0.00023973394],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000115609015,0.0007757806,0.00002493595,0.00027001623,0.00021122226,0.00003809321,0.0007087045,0.12486322,0.31735057,0.000069151705,0.006177709,0.549395],"study_design_scores_gemma":[0.0010821961,0.0003647248,0.0014289897,0.00021904844,0.00016386977,0.000063592015,0.00010169509,0.036522835,0.93392324,0.0002444291,0.024738925,0.0011464535],"about_ca_topic_score_codex":0.000006152603,"about_ca_topic_score_gemma":0.000025741587,"teacher_disagreement_score":0.6165727,"about_ca_system_score_codex":0.00010574569,"about_ca_system_score_gemma":0.000021015716,"threshold_uncertainty_score":0.999996},"labels":[],"label_agreement":null},{"id":"W2135369720","doi":"10.1109/ted.2005.850668","title":"On-chip antennas in silicon ICs and their application","year":2005,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":261,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Toronto","funders":"","keywords":"CMOS; Electronic circuit; Chip; Electronic engineering; Integrated circuit; Wireless; Radio frequency; System in package; Key (lock); System on a chip; Electrical engineering; Computer science; Engineering; Embedded system; Telecommunications","score_opus":0.006284640946332033,"score_gpt":0.20831543107228964,"score_spread":0.20203079012595762,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2135369720","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.86878157,0.0005923439,0.12888242,0.000313111,0.00004207017,0.00015536099,0.0000046484042,0.00051300955,0.0007154532],"genre_scores_gemma":[0.99922687,0.00046797033,0.00008421411,0.00008540462,0.000016438978,0.0000625864,0.0000011321561,0.000018470151,0.00003690458],"study_design_codex":"design_other","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9994561,0.000008135972,0.00012322694,0.00015410969,0.000053180207,0.00020524532],"domain_scores_gemma":[0.99975675,0.00006022032,0.000014433103,0.00013726162,0.000007883062,0.000023425266],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000047943802,0.00013399869,0.00011405717,0.00016765653,0.000048989696,0.00001612292,0.000082229795,0.00009843273,0.000008383559],"category_scores_gemma":[8.4946765e-7,0.00011813811,0.00002613507,0.0001948431,0.000026929207,0.00010902096,3.3400897e-7,0.00027490736,0.000030930853],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000058971662,0.000253917,0.00023790327,0.0000828444,0.000083599174,0.000001356046,0.00054629985,0.12126793,0.079531215,0.0015929501,0.000101023084,0.796242],"study_design_scores_gemma":[0.0005731624,0.00025970823,0.0019900086,0.000054418935,0.000016123779,0.000012059964,0.00024308769,0.18274748,0.80893564,0.001371627,0.003395127,0.0004015553],"about_ca_topic_score_codex":0.000013922506,"about_ca_topic_score_gemma":0.00073216984,"teacher_disagreement_score":0.79584044,"about_ca_system_score_codex":0.00006501927,"about_ca_system_score_gemma":0.0000063899456,"threshold_uncertainty_score":0.4817532},"labels":[],"label_agreement":null},{"id":"W2136103934","doi":"10.1109/ted.2007.914839","title":"Fully Integrated Single Photon Avalanche Diode Detector in Standard CMOS 0.18- $\\mu$m Technology","year":2008,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Advanced Optical Sensing Technologies","field":"Physics and Astronomy","cited_by":161,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McMaster University","funders":"","keywords":"APDS; Avalanche photodiode; CMOS; Single-photon avalanche diode; Photodetector; Optoelectronics; Geiger counter; Avalanche diode; Detector; Physics; Electronic circuit; Diode; Optics; Electrical engineering; Voltage; Breakdown voltage; Engineering","score_opus":0.014778703834879453,"score_gpt":0.24813844158966403,"score_spread":0.23335973775478458,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2136103934","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.7643293,0.00008703036,0.23367451,0.0002844017,0.00010364859,0.00025741046,0.000030408513,0.00052943936,0.00070382934],"genre_scores_gemma":[0.9937322,0.000023483135,0.0058795526,0.000036900987,0.000025500987,0.00007055464,0.0000053117997,0.00004019466,0.00018627512],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9983558,0.000036729463,0.00032898213,0.00045539543,0.000198004,0.0006250927],"domain_scores_gemma":[0.9992823,0.00009191562,0.00009891725,0.0003795689,0.00008984464,0.00005748242],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.00006084218,0.00030748398,0.00037438798,0.0004045896,0.00022121458,0.000025883253,0.00027396544,0.00018913898,0.00018118972],"category_scores_gemma":[0.000007540722,0.00028514324,0.00010323196,0.0010355758,0.00024064709,0.00018378552,0.0000029847308,0.00086410897,0.000056466393],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0013081153,0.0024679685,0.011821484,0.000048737787,0.0004945514,0.00010745415,0.00042985546,0.012170025,0.58157146,0.0024411061,0.00030470412,0.38683453],"study_design_scores_gemma":[0.000725346,0.0006422339,0.000170658,0.00005825725,0.000026674179,0.000013645158,0.0002150742,0.0007778514,0.9903275,0.0030547816,0.0036254064,0.0003626183],"about_ca_topic_score_codex":0.00011786925,"about_ca_topic_score_gemma":0.00038123404,"teacher_disagreement_score":0.408756,"about_ca_system_score_codex":0.00024930722,"about_ca_system_score_gemma":0.000090394075,"threshold_uncertainty_score":0.99996006},"labels":[],"label_agreement":null},{"id":"W2136234499","doi":"10.1109/ted.2005.850656","title":"MOSFET Modeling for RF IC Design","year":2005,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Radio Frequency Integrated Circuit Design","field":"Engineering","cited_by":156,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McMaster University","funders":"","keywords":"MOSFET; Electronic engineering; Radio frequency; Electrical engineering; Computer science; Engineering; Voltage; Transistor","score_opus":0.02706438670372167,"score_gpt":0.24352055893643304,"score_spread":0.21645617223271138,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2136234499","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.014238824,0.0007768216,0.98134285,0.000112767586,0.00029621663,0.0005019397,0.000017703811,0.00082371215,0.001889163],"genre_scores_gemma":[0.9955608,0.00017381622,0.0033308754,0.00013045635,0.00012779632,0.00035346317,0.000003274066,0.000096067175,0.00022343389],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9986473,0.000031839296,0.0003080836,0.00028110246,0.00017211752,0.0005595747],"domain_scores_gemma":[0.99940926,0.00014282402,0.0000245426,0.00026377762,0.00006559998,0.00009401646],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.00018504258,0.00027954954,0.00022255082,0.00022606704,0.00015744417,0.000058916154,0.00023643984,0.00015538065,0.000070489026],"category_scores_gemma":[0.000003057113,0.00029101348,0.00013413926,0.00029021973,0.000016857275,0.0003611065,3.476269e-8,0.00035718453,0.00011454959],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000020422023,0.00003693878,1.8926349e-7,0.000024543526,0.00009634392,6.904132e-7,0.00009308224,0.9179956,0.06110451,0.000051528907,0.00041091998,0.020165278],"study_design_scores_gemma":[0.00021297934,0.000107625994,2.5768722e-7,0.00002034848,0.000048114885,0.000009656226,0.000015877815,0.57610065,0.42212096,0.00015270356,0.0010028627,0.0002079794],"about_ca_topic_score_codex":0.000013887849,"about_ca_topic_score_gemma":0.00012174318,"teacher_disagreement_score":0.981322,"about_ca_system_score_codex":0.00039004956,"about_ca_system_score_gemma":0.00006373292,"threshold_uncertainty_score":0.9999542},"labels":[],"label_agreement":null},{"id":"W2136936744","doi":"10.1109/ted.2010.2051488","title":"Fabrication and Characterization of GaAs MOS Capacitor With CVD Grown Polymer-Based Thin Film as a Gate Dielectric","year":2010,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Semiconductor materials and devices","field":"Engineering","cited_by":5,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Bishop's University; Université de Sherbrooke","funders":"","keywords":"Capacitor; Gate dielectric; Dielectric; Materials science; Passivation; Capacitance; Polymer; Analytical Chemistry (journal); Optoelectronics; Thin film; Nanotechnology; Electrical engineering; Electrode; Chemistry; Layer (electronics); Voltage; Physical chemistry; Organic chemistry; Transistor","score_opus":0.005349357845986889,"score_gpt":0.19652865080218654,"score_spread":0.19117929295619965,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2136936744","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.98769796,0.00010747069,0.011198242,0.000054526383,0.0003520379,0.00021803362,0.000031131407,0.00020213959,0.00013844892],"genre_scores_gemma":[0.99950933,0.0000731522,0.000092636496,0.00006925023,0.00007124373,0.00006497348,0.000020805073,0.000040995597,0.000057609683],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9991225,0.000026324384,0.0002294712,0.00021589188,0.00016553947,0.00024029352],"domain_scores_gemma":[0.99952704,0.000049713104,0.00009225637,0.00019496013,0.000067798304,0.000068249676],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00007058941,0.00020397056,0.00020888027,0.00020877711,0.00008906186,0.000055826917,0.00009959559,0.0001142437,0.00012834795],"category_scores_gemma":[0.000001924991,0.00017855862,0.000035949022,0.00032203068,0.000043361917,0.00029064034,3.3177125e-7,0.00022440792,0.000011584946],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00006416733,0.000049455317,0.000053071373,0.00009603745,0.000042121377,4.80804e-7,0.00014148542,0.0011225658,0.99701065,0.000036575613,0.0000030381282,0.0013803572],"study_design_scores_gemma":[0.00031689662,0.00025704916,0.0015657953,0.000033456257,0.000059499427,0.000009739152,0.00001692489,0.023378652,0.973997,0.000012019966,0.000148182,0.0002048096],"about_ca_topic_score_codex":0.00014015604,"about_ca_topic_score_gemma":0.00021395639,"teacher_disagreement_score":0.023013668,"about_ca_system_score_codex":0.000023562796,"about_ca_system_score_gemma":0.000042135565,"threshold_uncertainty_score":0.72814095},"labels":[],"label_agreement":null},{"id":"W2138843068","doi":"10.1109/ted.2011.2149528","title":"RF Performance Potential of Array-Based Carbon-Nanotube Transistors—Part I: Intrinsic Results","year":2011,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Carbon Nanotubes in Composites","field":"Materials Science","cited_by":18,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Alberta","funders":"","keywords":"Transconductance; Carbon nanotube field-effect transistor; Parasitic extraction; Transistor; Carbon nanotube; Cutoff frequency; Radio frequency; PMOS logic; Field-effect transistor; Physics; Materials science; Electrical engineering; Optoelectronics; Computer science; Electronic engineering; Nanotechnology; Engineering; Voltage","score_opus":0.01520728138050011,"score_gpt":0.21937110384847347,"score_spread":0.20416382246797335,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2138843068","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9829193,0.00015846886,0.012754706,0.00008871579,0.0014128677,0.00031096456,0.00007139872,0.00021630837,0.002067322],"genre_scores_gemma":[0.9985331,0.000048870803,0.0009883494,0.0000978763,0.00009107327,0.000054929867,0.000004783165,0.00004317263,0.00013783976],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.997515,0.00010536919,0.00069956697,0.0005793634,0.0005273401,0.0005733586],"domain_scores_gemma":[0.9987227,0.00011763917,0.00024382514,0.00064101943,0.00015778124,0.00011703952],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.00039041293,0.00033372198,0.00041724008,0.00033585378,0.00018837769,0.000032548498,0.000506337,0.00016077836,0.00025132927],"category_scores_gemma":[0.0000053517433,0.00032524765,0.00020914,0.0004898779,0.00023210977,0.0002456236,0.0000014024713,0.0003105911,0.000049309318],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0015525207,0.00042364423,0.000043840446,0.00008951435,0.00003779858,0.0000047142817,0.00038381928,0.0029070296,0.99306184,0.000009384346,0.000019221485,0.0014666908],"study_design_scores_gemma":[0.0010388952,0.0009691916,0.0004215557,0.00009686034,0.00013863368,0.000013357009,0.000023485598,0.0011130221,0.995479,0.000016700877,0.0003511789,0.00033813925],"about_ca_topic_score_codex":0.00039731225,"about_ca_topic_score_gemma":0.0004240291,"teacher_disagreement_score":0.015613857,"about_ca_system_score_codex":0.0001401498,"about_ca_system_score_gemma":0.00021491246,"threshold_uncertainty_score":0.99991995},"labels":[],"label_agreement":null},{"id":"W2140311025","doi":"10.1109/ted.2006.881053","title":"An Approach to Improve the Signal-to-Noise Ratio of Active Pixel Sensor for Low-Light-Level Applications","year":2006,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"CCD and CMOS Imaging Sensors","field":"Engineering","cited_by":23,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McMaster University","funders":"","keywords":"Reset (finance); CMOS; Noise (video); Signal-to-noise ratio (imaging); SIGNAL (programming language); Electronic engineering; Photodetector; Computer science; Node (physics); Image sensor; Pixel; Electrical engineering; Engineering; Optoelectronics; Physics; Telecommunications; Acoustics; Artificial intelligence","score_opus":0.007780634871971803,"score_gpt":0.225877943021343,"score_spread":0.2180973081493712,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2140311025","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.10088303,0.000030347099,0.89627326,0.00024694038,0.00007790787,0.0012643833,0.00017662793,0.00019706783,0.0008504366],"genre_scores_gemma":[0.99436647,0.0000036422114,0.003919666,0.00012750122,0.00012581391,0.0010098795,0.000012969785,0.00005478655,0.00037928653],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9989076,0.000025501155,0.00025979,0.00029711454,0.00016510402,0.00034488595],"domain_scores_gemma":[0.9993133,0.00009565228,0.000042803666,0.000359938,0.00010500363,0.000083281826],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000089143,0.0002143934,0.00019848718,0.00016270818,0.0001940427,0.000047132762,0.00023373589,0.000065426495,0.000007224175],"category_scores_gemma":[0.0000010180594,0.00018175464,0.00010666918,0.0004282929,0.000023670576,0.00014315436,5.364735e-7,0.00017947295,0.000019359679],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000053969932,0.00023394662,0.000001316141,0.00005790803,0.000057114237,5.0130534e-8,0.00034831587,0.35322788,0.63362205,0.0002347784,0.00013093212,0.012031753],"study_design_scores_gemma":[0.0002913841,0.0001582665,0.00021172072,0.000012328328,0.00008423524,0.0000026603022,0.00026443467,0.04613198,0.948694,0.00008364281,0.0037967085,0.00026861817],"about_ca_topic_score_codex":0.00006591148,"about_ca_topic_score_gemma":0.00018770064,"teacher_disagreement_score":0.8934834,"about_ca_system_score_codex":0.000087842476,"about_ca_system_score_gemma":0.000033110748,"threshold_uncertainty_score":0.7411739},"labels":[],"label_agreement":null},{"id":"W2141101136","doi":"10.1109/16.877171","title":"Transduction principles of a-Si:H Schottky diode X-ray image sensors","year":2000,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":9,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Schottky diode; Materials science; X-ray detector; Detector; Sensitivity (control systems); Optoelectronics; Image sensor; Diode; Absorption (acoustics); Schottky barrier; Fabrication; X-ray; Optics; Physics; Electronic engineering; Engineering","score_opus":0.009286750410698147,"score_gpt":0.21220137923702848,"score_spread":0.20291462882633032,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2141101136","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.94293386,0.00054427073,0.051469915,0.00016457081,0.00027478536,0.0002800192,0.000047716625,0.0018657828,0.0024190997],"genre_scores_gemma":[0.99604315,0.0009956165,0.0021855356,0.000016418335,0.000029288696,0.000054490738,0.0000033620822,0.00007239616,0.0005997347],"study_design_codex":"simulation_or_modeling","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9984816,0.000040910414,0.00042285485,0.00031980922,0.00027794277,0.00045691052],"domain_scores_gemma":[0.999363,0.000055317993,0.000040703588,0.0004323255,0.00004458677,0.00006404061],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.00011010932,0.00031591486,0.00033314212,0.00031730992,0.00012376017,0.000030394884,0.00028536795,0.00021562244,0.0006061593],"category_scores_gemma":[0.0000018354183,0.00032853833,0.00019229912,0.0005136219,0.00013205831,0.00040786594,2.3162896e-7,0.00055696844,0.00012288163],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00009547219,0.00018277793,0.000015136205,0.00022648589,0.00023127605,0.000005265083,0.0005386721,0.5321549,0.43533432,0.000066401786,0.000063311374,0.031085983],"study_design_scores_gemma":[0.0004307996,0.00018006266,0.00053605373,0.00006605934,0.00011470596,0.000017055472,0.00011637549,0.007856071,0.9797156,0.000039862665,0.01054028,0.0003870839],"about_ca_topic_score_codex":0.000038188828,"about_ca_topic_score_gemma":0.00017665785,"teacher_disagreement_score":0.54438126,"about_ca_system_score_codex":0.0001381084,"about_ca_system_score_gemma":0.00002459914,"threshold_uncertainty_score":0.9999167},"labels":[],"label_agreement":null},{"id":"W2143274460","doi":"10.1109/ted.2007.908883","title":"Atomistic Modeling of Gate-All-Around Si-Nanowire Field-Effect Transistors","year":2007,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":17,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"National Research Council Canada","funders":"","keywords":"Nanowire; Transistor; Materials science; Field-effect transistor; Quantum capacitance; Doping; Capacitance; Non-equilibrium thermodynamics; Logic gate; Optoelectronics; Condensed matter physics; Nanotechnology; Physics; Electronic engineering; Voltage; Electrode; Quantum mechanics; Engineering","score_opus":0.014657841866756447,"score_gpt":0.2565513253145231,"score_spread":0.24189348344776668,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2143274460","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.38161406,0.00064761576,0.6157243,0.0000071432632,0.00050997105,0.00020518941,0.0000055081914,0.00017088455,0.0011152924],"genre_scores_gemma":[0.9993259,0.00017951932,0.0001664133,0.00008780395,0.000071197,0.000027394583,0.0000032364035,0.000058225287,0.00008035976],"study_design_codex":"simulation_or_modeling","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99846995,0.000029253439,0.00044718926,0.0002730032,0.00026989757,0.00051070837],"domain_scores_gemma":[0.99929154,0.00023182575,0.000054794473,0.00027714064,0.000044125027,0.0001005752],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.0002630939,0.00029363952,0.000332229,0.00018857875,0.00010049935,0.000019966528,0.00021427746,0.00015445099,0.00007559357],"category_scores_gemma":[0.0000024057786,0.00029513653,0.00016087803,0.00028613603,0.00002647064,0.00022906915,3.3466443e-7,0.00036209586,0.000016560954],"study_design_candidate":"simulation_or_modeling","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0001416384,0.00010497997,0.00004418441,0.00038454655,0.0003432427,0.000008691789,0.00038842254,0.85099494,0.10771423,0.00007474538,0.000026856877,0.039773524],"study_design_scores_gemma":[0.0009283945,0.00077299704,0.000015030159,0.00016825346,0.0003217317,0.000018344297,0.00020177332,0.2681646,0.7266614,0.00020876665,0.0018762164,0.0006624734],"about_ca_topic_score_codex":0.00004676458,"about_ca_topic_score_gemma":0.00025491652,"teacher_disagreement_score":0.6189472,"about_ca_system_score_codex":0.00017257755,"about_ca_system_score_gemma":0.000022688057,"threshold_uncertainty_score":0.99995005},"labels":[],"label_agreement":null},{"id":"W2143848687","doi":"10.1109/ted.2005.859635","title":"Accelerated Stress Testing of a-Si:H Pixel Circuits for AMOLED Displays","year":2005,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":29,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"University of Waterloo","keywords":"AMOLED; Backplane; Active matrix; OLED; Reliability (semiconductor); Thin-film transistor; Materials science; Electronic circuit; Transistor; Stress (linguistics); Diode; Optoelectronics; Pixel; Electronic engineering; Computer science; Electrical engineering; Engineering; Voltage; Computer hardware; Nanotechnology; Artificial intelligence","score_opus":0.02535717299978646,"score_gpt":0.24531495127131142,"score_spread":0.21995777827152496,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2143848687","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.7376007,0.00039002066,0.25935867,0.000087890054,0.00020457436,0.0004132352,0.00011653593,0.0013762366,0.00045218284],"genre_scores_gemma":[0.99694145,0.000046290097,0.0026479291,0.000024149635,0.000038780985,0.0001483994,0.0000058080304,0.000067550354,0.00007965559],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.998747,0.0000150341875,0.00036199018,0.00025626578,0.00016795499,0.00045176773],"domain_scores_gemma":[0.999295,0.00021049198,0.000063118016,0.00028422129,0.00009691588,0.00005024261],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.000080472215,0.00025942706,0.00029242353,0.00025984252,0.000121471916,0.000029948187,0.00030206397,0.00017721378,0.000023082066],"category_scores_gemma":[0.0000094411735,0.00027422764,0.000109275905,0.0005008437,0.000050431827,0.00026673774,5.0286354e-7,0.0003337339,0.000012205311],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00002733453,0.00019022696,0.00011311922,0.00033511416,0.00019966463,8.503132e-7,0.00021515001,0.28424218,0.6347932,0.00006670848,0.000075989694,0.07974043],"study_design_scores_gemma":[0.00053942815,0.00018284314,0.0004792365,0.0000916425,0.00009220848,0.000004792609,0.000058217967,0.040471632,0.9567406,0.000032730448,0.0010085242,0.00029810035],"about_ca_topic_score_codex":0.000017284798,"about_ca_topic_score_gemma":0.00050704315,"teacher_disagreement_score":0.32194743,"about_ca_system_score_codex":0.00014489242,"about_ca_system_score_gemma":0.00003246193,"threshold_uncertainty_score":0.999971},"labels":[],"label_agreement":null},{"id":"W2145546338","doi":"10.1109/ted.2007.902900","title":"Nonequilibrium Green's Function Treatment of Phonon Scattering in Carbon-Nanotube Transistors","year":2007,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Carbon Nanotubes in Composites","field":"Materials Science","cited_by":184,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Carbon nanotube; Phonon; Non-equilibrium thermodynamics; Scattering; Carbon nanotube field-effect transistor; Phonon scattering; Function (biology); Transistor; Materials science; Condensed matter physics; Nanotechnology; Physics; Field-effect transistor; Quantum mechanics","score_opus":0.010771249978882865,"score_gpt":0.2448944379068673,"score_spread":0.23412318792798442,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2145546338","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9861709,0.00039024343,0.011380721,0.00009791078,0.00093617494,0.00033223414,0.000011896184,0.00012591302,0.00055399776],"genre_scores_gemma":[0.9993882,0.000046803747,0.00022694295,0.00003793278,0.00007782756,0.00004043412,0.000002253626,0.000037969836,0.0001416091],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9980053,0.00007252225,0.0005592779,0.00047319086,0.0003324821,0.0005572776],"domain_scores_gemma":[0.9991675,0.00019364705,0.00013168223,0.0003693402,0.000052328767,0.000085505955],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.00030642675,0.0002920786,0.00039098854,0.0005150785,0.00006934073,0.000026111948,0.00019208704,0.00013169942,0.000103007216],"category_scores_gemma":[0.0000011644339,0.00028659633,0.00016243181,0.00056835485,0.00010098337,0.0002127535,9.5179627e-7,0.00013288611,0.000018018134],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00066741084,0.00047723416,0.00043964325,0.000045485514,0.0000290909,0.000007810761,0.0004647643,0.0042823995,0.9866657,0.0000062174086,0.0000010633779,0.0069131623],"study_design_scores_gemma":[0.00086178683,0.0012766905,0.001901525,0.00005269015,0.000084058636,0.000013238724,0.000054442753,0.000874777,0.9943468,0.000018555642,0.0002595302,0.00025589316],"about_ca_topic_score_codex":0.0024817938,"about_ca_topic_score_gemma":0.0074723125,"teacher_disagreement_score":0.013217317,"about_ca_system_score_codex":0.0005243848,"about_ca_system_score_gemma":0.00007739275,"threshold_uncertainty_score":0.99995863},"labels":[],"label_agreement":null},{"id":"W2145936381","doi":"10.1109/16.936506","title":"Profile design considerations for minimizing base transit time in SiGe HBTs for all levels of injection before onset of Kirk effect","year":2001,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":17,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Common emitter; Doping; Bipolar junction transistor; Materials science; Optoelectronics; Diffusion; Electric field; Base (topology); Transit time; Silicon-germanium; Current density; Transistor; Electrical engineering; Chemistry; Physics; Engineering; Voltage; Mathematics; Silicon","score_opus":0.033108851102220255,"score_gpt":0.27365090042286,"score_spread":0.24054204932063974,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2145936381","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.29938304,0.00016503743,0.69827956,0.000022057819,0.00015539322,0.0016367403,0.00022889003,0.000084922736,0.000044374145],"genre_scores_gemma":[0.99305403,0.000024938307,0.006122176,0.000038268674,0.000025436073,0.00057463103,0.000016905078,0.000055203964,0.00008838402],"study_design_codex":"simulation_or_modeling","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99864185,0.00007517367,0.0005120026,0.0002601607,0.00014124849,0.0003695619],"domain_scores_gemma":[0.9987705,0.0008024675,0.000105080304,0.00018772797,0.00008523937,0.000048983802],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.0003358997,0.00024442235,0.0004035435,0.0002798776,0.00008630666,0.000014691692,0.00009838673,0.0001334756,0.00012517035],"category_scores_gemma":[0.000011804176,0.00025512482,0.00015004218,0.00024335686,0.00003411464,0.00028302995,2.724229e-7,0.00015563096,0.000003429072],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00041334957,0.00026549128,0.00006215802,0.00071612507,0.00032617222,0.000002264249,0.0012564516,0.50041777,0.4819093,0.000047089507,0.00014131225,0.014442489],"study_design_scores_gemma":[0.0016910034,0.0018947327,0.00012346721,0.0001479325,0.00019189213,0.00002062869,0.000069758746,0.07696801,0.91788614,0.0005821469,0.00014175301,0.00028255975],"about_ca_topic_score_codex":0.000017455897,"about_ca_topic_score_gemma":0.00031256175,"teacher_disagreement_score":0.693671,"about_ca_system_score_codex":0.00011787448,"about_ca_system_score_gemma":0.000054281136,"threshold_uncertainty_score":0.9999901},"labels":[],"label_agreement":null},{"id":"W2146190744","doi":"10.1109/16.998589","title":"Modeling of the reverse characteristics of a-Si:H TFTs","year":2002,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":65,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Materials science; Thermal conduction; Ohmic contact; Leakage (economics); Thin-film transistor; Conductivity; Optoelectronics; Transistor; Dielectric; Silicon; Biasing; Voltage; Condensed matter physics; Electrical engineering; Nanotechnology; Chemistry; Composite material; Physics","score_opus":0.013614443104043143,"score_gpt":0.1944886949427255,"score_spread":0.18087425183868236,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2146190744","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.8921769,0.00049515784,0.10555669,0.00013857915,0.00040826356,0.00017712366,0.00004239235,0.0004029731,0.0006018911],"genre_scores_gemma":[0.99918926,0.0003647127,0.00029197478,0.000018969738,0.0000095545365,0.000012412279,3.5067563e-7,0.000027795875,0.00008494614],"study_design_codex":"simulation_or_modeling","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99917966,0.00001770862,0.00029940356,0.00012225243,0.00017422531,0.00020677659],"domain_scores_gemma":[0.9995014,0.00003291347,0.000046920868,0.00035575085,0.000042964984,0.000020025767],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00005283044,0.00014520164,0.00021396215,0.00012357486,0.000055464996,0.0000059544427,0.0002789962,0.0001139874,0.000053972126],"category_scores_gemma":[0.0000034397028,0.00012367681,0.00012219291,0.00030631435,0.00005685709,0.00010066981,6.1028305e-7,0.00031980663,0.000009962121],"study_design_candidate":"simulation_or_modeling","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000025254152,0.00022176506,0.00008472595,0.00046573218,0.00024525108,0.000001524848,0.0008829352,0.76890117,0.2100888,0.00020471094,0.00012506424,0.01875308],"study_design_scores_gemma":[0.00022247611,0.000070074784,0.00017605518,0.000116007046,0.000104921215,0.0000053453505,0.00007637588,0.48082796,0.51753074,0.000048955437,0.0006183432,0.00020278255],"about_ca_topic_score_codex":0.000021204973,"about_ca_topic_score_gemma":0.000094951654,"teacher_disagreement_score":0.30744192,"about_ca_system_score_codex":0.000058482197,"about_ca_system_score_gemma":0.000007718054,"threshold_uncertainty_score":0.5043394},"labels":[],"label_agreement":null},{"id":"W2146192334","doi":"10.1109/16.915724","title":"Transimpedance amplifier-based full low-frequency noise characterization setup for Si/SiGe HBTs","year":2001,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Radio Frequency Integrated Circuit Design","field":"Engineering","cited_by":30,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"CMC Microsystems (Canada)","funders":"Centre National de la Recherche Scientifique","keywords":"Transimpedance amplifier; Bipolar junction transistor; Amplifier; Noise (video); Electrical impedance; Optoelectronics; Y-factor; Heterojunction bipolar transistor; Current source; Electrical engineering; Transistor; Flicker noise; Electronic engineering; Materials science; Voltage; Low-noise amplifier; Noise figure; Engineering; Operational amplifier; Computer science; CMOS","score_opus":0.012565219450980386,"score_gpt":0.22804385291738563,"score_spread":0.21547863346640525,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2146192334","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.27310136,0.00018550805,0.72358066,0.00013109602,0.0005805539,0.00073178415,0.00016829859,0.0008060344,0.0007147265],"genre_scores_gemma":[0.99796706,0.00023500402,0.00032854613,0.00027970012,0.00012443194,0.0005984636,0.000107544605,0.00014518586,0.00021405445],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99786866,0.000065694156,0.000510898,0.0004846381,0.00028587156,0.0007842258],"domain_scores_gemma":[0.9990215,0.00014774657,0.000082958904,0.00044970514,0.00013679176,0.0001613192],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.0001691032,0.00046906515,0.0003673418,0.00035060453,0.0002234567,0.00009907122,0.0003368849,0.00026578788,0.00017960985],"category_scores_gemma":[0.000005311065,0.0005084985,0.00022023582,0.0007590284,0.000048951115,0.00053902314,4.963795e-8,0.0004598103,0.00008689699],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00010871945,0.00014566063,0.000019952899,0.00016782297,0.00011098319,0.000008437153,0.00017771612,0.07594137,0.9091488,0.000079717094,0.000051030045,0.014039755],"study_design_scores_gemma":[0.0011400473,0.00060209545,0.00027712135,0.00016111431,0.00015538835,0.000036764308,0.000020430629,0.07016942,0.9234901,0.00023303837,0.0028990188,0.00081545184],"about_ca_topic_score_codex":0.0000365966,"about_ca_topic_score_gemma":0.00032282557,"teacher_disagreement_score":0.72486573,"about_ca_system_score_codex":0.00037744583,"about_ca_system_score_gemma":0.00012649622,"threshold_uncertainty_score":0.99973667},"labels":[],"label_agreement":null},{"id":"W2147133116","doi":"10.1109/ted.2015.2406074","title":"An Ultra-Low Specific ON-Resistance LDMOST With Self-Driven Split Gate","year":2015,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":9,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Toronto","funders":"China Scholarship Council; National Natural Science Foundation of China","keywords":"Oxide; Field-effect transistor; Transistor; Physics; Doping; Electrical engineering; Analytical Chemistry (journal); Voltage; Topology (electrical circuits); Materials science; Optoelectronics; Chemistry; Quantum mechanics; Engineering","score_opus":0.01585764491244317,"score_gpt":0.23351346497168698,"score_spread":0.2176558200592438,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2147133116","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.7351265,0.0013794007,0.2437126,0.000102039616,0.0012537105,0.00093537,0.00009409448,0.0022702403,0.015126031],"genre_scores_gemma":[0.9978268,0.0002579289,0.0010580411,0.00012669183,0.00014746987,0.000078295874,0.00001001492,0.00009902318,0.00039569475],"study_design_codex":"simulation_or_modeling","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99829245,0.00004582223,0.0002636728,0.0004401989,0.0004026135,0.00055526657],"domain_scores_gemma":[0.9990468,0.00005150338,0.000059392954,0.00051912427,0.00008020909,0.00024299035],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.000103076134,0.00036762116,0.00026892612,0.00013684992,0.00014465704,0.000093742245,0.00032690223,0.0000998405,0.000089103516],"category_scores_gemma":[4.5504663e-7,0.00033651636,0.000059308397,0.00038271115,0.000041337487,0.0005030358,1.5960345e-7,0.0004031184,0.00017113671],"study_design_candidate":"simulation_or_modeling","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0003437583,0.00068781513,0.00006970329,0.0001836837,0.00043315452,0.000039666458,0.0014564964,0.91823334,0.06963061,0.00054159766,0.0013426795,0.0070375055],"study_design_scores_gemma":[0.0030033493,0.0022071844,0.00017013078,0.00038144665,0.00021015301,0.000043686927,0.0009046444,0.012589552,0.8457498,0.0002963472,0.13241965,0.0020240564],"about_ca_topic_score_codex":0.0000061146757,"about_ca_topic_score_gemma":0.00018991355,"teacher_disagreement_score":0.90564376,"about_ca_system_score_codex":0.00029612493,"about_ca_system_score_gemma":0.000048751535,"threshold_uncertainty_score":0.9999087},"labels":[],"label_agreement":null},{"id":"W2147369769","doi":"10.1109/ted.2002.801229","title":"Channel noise modeling of deep submicron MOSFETs","year":2002,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Semiconductor materials and devices","field":"Engineering","cited_by":149,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McMaster University","funders":"","keywords":"Noise (video); Flicker noise; Electronic engineering; Channel (broadcasting); Noise temperature; Noise generator; Materials science; Burst noise; Noise spectral density; Optoelectronics; Noise figure; CMOS; Electrical engineering; Phase noise; Engineering; Computer science","score_opus":0.016414287501556737,"score_gpt":0.20847757474145145,"score_spread":0.19206328723989471,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2147369769","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9219893,0.0021578455,0.0737543,0.000028537395,0.0005710646,0.00014051181,0.000016073682,0.00031148965,0.0010308574],"genre_scores_gemma":[0.999094,0.00057558017,0.00009973396,0.00004589573,0.000059030095,0.000025886722,0.0000020271113,0.00004731043,0.00005050236],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99900585,0.000019447922,0.00029369624,0.00019389264,0.00015103187,0.00033608876],"domain_scores_gemma":[0.99961895,0.000027899438,0.00003673355,0.00021194253,0.000040372193,0.00006407934],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00006384202,0.00020518315,0.00024222289,0.00016152472,0.0000698896,0.00003024026,0.00015555936,0.000103831975,0.00036642223],"category_scores_gemma":[7.646628e-7,0.00020574956,0.00008962224,0.00019624879,0.000017840372,0.00023327747,4.617741e-7,0.00016010241,0.000078174955],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0000134008205,0.000068942856,0.000002248535,0.000117857235,0.00006255249,0.0000010146401,0.00033589965,0.73291236,0.26445332,0.0000056302383,0.000025723848,0.0020010357],"study_design_scores_gemma":[0.00017333934,0.000056018842,0.0000065869694,0.000025494237,0.000031329826,0.0000055307482,0.00004160656,0.5520499,0.44733417,0.000026802829,0.000086801105,0.00016242506],"about_ca_topic_score_codex":0.0000600039,"about_ca_topic_score_gemma":0.00016559285,"teacher_disagreement_score":0.18288085,"about_ca_system_score_codex":0.000053141248,"about_ca_system_score_gemma":0.000004372708,"threshold_uncertainty_score":0.8390224},"labels":[],"label_agreement":null},{"id":"W2152408330","doi":"10.1109/ted.2008.2011679","title":"Influence of Channel Stoichiometry on Zinc Indium Oxide Thin-Film Transistor Performance","year":2009,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":25,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Dalhousie University","funders":"","keywords":"Stoichiometry; Annealing (glass); Transistor; Materials science; Thin-film transistor; Zinc; Indium; Sputtering; Optoelectronics; Analytical Chemistry (journal); Threshold voltage; Thin film; Subthreshold conduction; Oxide; Semiconductor; Subthreshold slope; Voltage; Nanotechnology; Electrical engineering; Chemistry; Metallurgy; Layer (electronics); Physical chemistry","score_opus":0.006783900093442047,"score_gpt":0.20766145163019006,"score_spread":0.20087755153674802,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2152408330","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.982832,0.00055718794,0.013915501,0.00018299393,0.0002131544,0.00028663143,0.000033095323,0.001397916,0.00058150577],"genre_scores_gemma":[0.99884164,0.0004116126,0.00033586065,0.00018700708,0.00002020644,0.000040854262,0.0000025052375,0.000056096567,0.00010422658],"study_design_codex":"simulation_or_modeling","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99811476,0.000030320967,0.00046368578,0.00037711154,0.0004187357,0.00059539406],"domain_scores_gemma":[0.99914664,0.00008476181,0.00008388537,0.0005343286,0.00006289397,0.000087484994],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.00014807007,0.00042179754,0.00043080552,0.00087532465,0.00016845632,0.000022797733,0.0005336388,0.00024679292,0.00001445811],"category_scores_gemma":[0.0000044475564,0.00043191988,0.00016691875,0.0010400945,0.00010230034,0.00042453085,4.9835876e-7,0.00089077256,0.000047900237],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00009603373,0.00018910418,0.000022597289,0.00015461694,0.00009148205,0.0000030936785,0.0003878345,0.908974,0.08529882,0.000049156086,0.00005347126,0.0046797777],"study_design_scores_gemma":[0.0005438386,0.00092089246,0.013832618,0.00018983752,0.00008640592,0.000012913776,0.000070505674,0.012054618,0.9710481,0.00007177309,0.0006219422,0.0005465616],"about_ca_topic_score_codex":0.00002398081,"about_ca_topic_score_gemma":0.000097576194,"teacher_disagreement_score":0.89691937,"about_ca_system_score_codex":0.00023755373,"about_ca_system_score_gemma":0.00005095137,"threshold_uncertainty_score":0.99981326},"labels":[],"label_agreement":null},{"id":"W2152459384","doi":"10.1109/ted.2005.848101","title":"Surface Recombination Currents in “Type-II” NpN InP–GaAsSb–InP Self-Aligned DHBTs","year":2005,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Semiconductor Quantum Structures and Devices","field":"Physics and Astronomy","cited_by":40,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Simon Fraser University","funders":"","keywords":"Common emitter; Optoelectronics; Materials science; Bipolar junction transistor; Heterojunction bipolar transistor; Heterojunction; Indium phosphide; Gallium arsenide; Transistor; Electrical engineering; Voltage","score_opus":0.011737777747272363,"score_gpt":0.2732017339247321,"score_spread":0.26146395617745977,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2152459384","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9954695,0.00038367353,0.0012464494,0.0003749739,0.00073165266,0.0003204224,0.000023129489,0.00014140729,0.0013087833],"genre_scores_gemma":[0.9989664,0.00007169868,0.000274355,0.0001395401,0.00016333832,0.000025537072,0.00003760041,0.000037551465,0.0002839572],"study_design_codex":"design_other","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9981388,0.0000962921,0.0004313934,0.0004906654,0.00028966702,0.00055321073],"domain_scores_gemma":[0.9992496,0.000084251405,0.000171298,0.00029291608,0.00009309838,0.00010886248],"candidate_categories":["metaepi_narrow","insufficient_payload"],"consensus_categories":[],"category_scores_codex":[0.00016402594,0.00033515034,0.00031374494,0.00021421096,0.00029751452,0.00008121785,0.00026871535,0.000112630005,0.0010045618],"category_scores_gemma":[9.963231e-7,0.00032970853,0.0001352853,0.0005996064,0.000026351021,0.00056644663,0.0000025831562,0.0003650002,0.00016133857],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0019062001,0.0187494,0.08650152,0.00059380784,0.0034321158,0.000019529203,0.015781071,0.17973948,0.21638769,0.018317062,0.011646322,0.44692582],"study_design_scores_gemma":[0.0066433284,0.001646578,0.01022863,0.00032595606,0.00041676927,0.000014441051,0.0010070329,0.033440955,0.87412935,0.0056514884,0.063735895,0.0027595516],"about_ca_topic_score_codex":0.0003390655,"about_ca_topic_score_gemma":0.00032244186,"teacher_disagreement_score":0.65774167,"about_ca_system_score_codex":0.00015871496,"about_ca_system_score_gemma":0.00012374073,"threshold_uncertainty_score":0.9999155},"labels":[],"label_agreement":null},{"id":"W2155373087","doi":"10.1109/ted.2005.843885","title":"Effects of the Parasitics on the Time Response of RCE-PDs","year":2005,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Photonic and Optical Devices","field":"Engineering","cited_by":10,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McMaster University","funders":"","keywords":"Parasitic extraction; Photodetector; Inductor; Resistor; Optoelectronics; Electronic engineering; Capacitive sensing; Materials science; Electrical engineering; Engineering; Voltage","score_opus":0.004104593522960615,"score_gpt":0.2077204550685489,"score_spread":0.20361586154558828,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2155373087","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99470454,0.00029077035,0.0024914348,0.00046391098,0.000109122586,0.00024164037,0.000009615061,0.00007186916,0.0016171089],"genre_scores_gemma":[0.9993442,0.00006996562,0.000042670672,0.00020880713,0.000019471629,0.000023924345,1.8520574e-7,0.000019874022,0.00027085218],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.999149,0.00011092043,0.00019993096,0.00010562052,0.0002122444,0.00022226784],"domain_scores_gemma":[0.99857855,0.0010531119,0.000041638203,0.00026733798,0.000025483265,0.000033861816],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00018550047,0.00013940153,0.00016680523,0.00005770964,0.00007845627,0.000009228406,0.00025686785,0.000073736905,0.000062078514],"category_scores_gemma":[0.000010214453,0.000083936575,0.00012369639,0.0002481021,0.000075385804,0.00006123339,6.7163904e-7,0.00027290577,0.00006242539],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00085798756,0.0005551186,0.000018601806,0.00036855397,0.0004792103,0.0000021236365,0.0008794124,0.2599881,0.72612756,0.0019140197,0.00033007137,0.008479256],"study_design_scores_gemma":[0.00018526628,0.00019515032,0.0013058843,0.0000833697,0.00007261469,0.000001933606,0.000011589953,0.024732532,0.97212076,0.000039480106,0.0011575826,0.00009382476],"about_ca_topic_score_codex":0.0000050090307,"about_ca_topic_score_gemma":0.000033190063,"teacher_disagreement_score":0.24599321,"about_ca_system_score_codex":0.00005448462,"about_ca_system_score_gemma":0.000029429008,"threshold_uncertainty_score":0.34228343},"labels":[],"label_agreement":null},{"id":"W2156100883","doi":"10.1109/ted.2008.920995","title":"Screening Effects Between Field-Enhancing Patterned Carbon Nanotubes: A Numerical Study","year":2008,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Carbon Nanotubes in Composites","field":"Materials Science","cited_by":12,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McGill University","funders":"","keywords":"Carbon nanotube; Joule heating; Screening effect; Current density; Materials science; Field electron emission; Field (mathematics); Anisotropy; Current (fluid); Nanotechnology; Optoelectronics; Condensed matter physics; Optics; Composite material; Physics; Thermodynamics","score_opus":0.01453775601815696,"score_gpt":0.2650627964246775,"score_spread":0.25052504040652057,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2156100883","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.8645076,0.00012500578,0.13360098,0.000089887515,0.00060593645,0.0005684857,0.000004841661,0.00035583708,0.00014138824],"genre_scores_gemma":[0.99845517,0.00000974007,0.00073180994,0.00024761554,0.00023981972,0.00015007547,0.0000013826158,0.00005325181,0.00011112423],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9971459,0.00032246142,0.00048981875,0.0007047331,0.0006359471,0.0007011493],"domain_scores_gemma":[0.9979741,0.0011630362,0.00013002135,0.0005200866,0.000062402374,0.00015034525],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.0003037724,0.00037439144,0.0005408987,0.00025392754,0.0004776311,0.000086763146,0.00041943075,0.00014048384,0.00009894616],"category_scores_gemma":[0.000016732722,0.00036137376,0.00016329401,0.0005066132,0.00005748272,0.00024657228,0.0000059316544,0.00047391222,0.000064384214],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00030447278,0.0009043714,0.019966517,0.00009333904,0.0001993126,0.00013132124,0.002245739,0.0032252348,0.96630406,0.0000023514285,0.00003229482,0.006590987],"study_design_scores_gemma":[0.00081258704,0.0019379423,0.0039331713,0.00008672701,0.00014218253,0.00003734856,0.00008268013,0.00086592074,0.9916326,0.000008223879,0.00004862254,0.00041202016],"about_ca_topic_score_codex":0.000956882,"about_ca_topic_score_gemma":0.00031037387,"teacher_disagreement_score":0.13394755,"about_ca_system_score_codex":0.0001353635,"about_ca_system_score_gemma":0.00007793594,"threshold_uncertainty_score":0.99988383},"labels":[],"label_agreement":null},{"id":"W2156778325","doi":"10.1109/16.987116","title":"Technological requirements for a lateral SiGe HBT technology including theoretical performance predictions relative to vertical SiGe HBTs","year":2002,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Radio Frequency Integrated Circuit Design","field":"Engineering","cited_by":18,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Heterojunction bipolar transistor; Parasitic extraction; Silicon-germanium; Materials science; Radio frequency; Transistor; Bipolar junction transistor; Electrical engineering; Optoelectronics; Microwave; Cutoff frequency; Electronic engineering; Engineering; Telecommunications; Silicon; Voltage","score_opus":0.026666658232198107,"score_gpt":0.2540245364799412,"score_spread":0.22735787824774312,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2156778325","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.3705007,0.00017688281,0.6218413,0.00087409624,0.00032272804,0.00092336006,0.000032333654,0.0018612128,0.0034673698],"genre_scores_gemma":[0.9980188,0.0001115041,0.00067032606,0.00010939546,0.00004437703,0.0008511636,0.0000028580077,0.00006901378,0.00012255974],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99792624,0.00004534361,0.00044420568,0.00047229082,0.00026518907,0.0008467272],"domain_scores_gemma":[0.9991948,0.00018619237,0.000026227224,0.00035840453,0.00008852304,0.00014586166],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.0001521246,0.00035910177,0.00032791137,0.0006286708,0.00036436442,0.00004762567,0.0003823589,0.000467421,0.00021442448],"category_scores_gemma":[0.000034162185,0.0003365752,0.00012087922,0.0011013539,0.00032289163,0.00038537255,8.7859354e-7,0.0008950852,0.00017947209],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00036832102,0.001519792,0.00043125634,0.0002934562,0.00158998,0.00004883325,0.0016650022,0.18610416,0.598589,0.12345649,0.00133641,0.08459728],"study_design_scores_gemma":[0.0007917074,0.0020981831,0.0000929958,0.00019457472,0.00018047543,0.00007789105,0.00006435496,0.21944791,0.77024406,0.004366822,0.001749901,0.0006911257],"about_ca_topic_score_codex":0.0000018894802,"about_ca_topic_score_gemma":0.000012483366,"teacher_disagreement_score":0.62751806,"about_ca_system_score_codex":0.00056147657,"about_ca_system_score_gemma":0.000019602816,"threshold_uncertainty_score":0.9999086},"labels":[],"label_agreement":null},{"id":"W2158382796","doi":"10.1109/ted.2010.2051370","title":"Fast Lateral Amorphous-Selenium Metal–Semiconductor–Metal Photodetector With High Blue-to-Ultraviolet Responsivity","year":2010,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":21,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Photodetector; Responsivity; Optoelectronics; Ultraviolet; Semiconductor detector; Semiconductor; Notation; Detector; Materials science; Amorphous solid; Metal; Physics; Optics; Chemistry; Crystallography; Mathematics","score_opus":0.00587063182852703,"score_gpt":0.20233692613448598,"score_spread":0.19646629430595894,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2158382796","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9797225,0.00009588325,0.015437819,0.0001461802,0.0010688333,0.0005202012,0.00019674563,0.0027276122,0.000084207],"genre_scores_gemma":[0.99689287,0.000031429052,0.0021790469,0.000102011356,0.00006937995,0.0002135804,0.000007922902,0.0001620283,0.00034173927],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9976388,0.000060153085,0.0003802748,0.0006311477,0.00041155174,0.0008780315],"domain_scores_gemma":[0.99874383,0.000120657496,0.00006309653,0.0007851812,0.00008990697,0.00019730604],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.00017886104,0.00060408935,0.00052845455,0.00073706027,0.00022703492,0.00009359671,0.0005752251,0.00036785778,0.0001904383],"category_scores_gemma":[0.0000068374115,0.000547919,0.00017960215,0.0009468642,0.00016181612,0.00044354197,0.0000018037013,0.0017310001,0.00016418767],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00022247103,0.00011067866,0.000037415117,0.000044782122,0.00024036753,0.000012810923,0.00022588925,0.014797202,0.98244774,0.000023275274,0.00007332073,0.001764027],"study_design_scores_gemma":[0.0005916638,0.000505019,0.0013001262,0.000033665496,0.00017282565,0.00007849087,0.00005986678,0.00046846012,0.99303836,0.000018993369,0.0030436367,0.0006888661],"about_ca_topic_score_codex":0.00020754097,"about_ca_topic_score_gemma":0.004690721,"teacher_disagreement_score":0.017170344,"about_ca_system_score_codex":0.00016795436,"about_ca_system_score_gemma":0.00006983347,"threshold_uncertainty_score":0.9996972},"labels":[],"label_agreement":null},{"id":"W2159574133","doi":"10.1109/ted.2007.911094","title":"Characterization of Short-Wavelength-Selective a-Si:H MSM Photoconductors for Large-Area Digital-Imaging Applications","year":2008,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":20,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Simon Fraser University","keywords":"Photodetector; Responsivity; Optoelectronics; Materials science; Photocurrent; Fabrication; Thin-film transistor; Photodiode; Quantum efficiency; Amorphous silicon; Photoconductivity; Thin film; Silicon; Optics; Crystalline silicon; Nanotechnology; Physics","score_opus":0.014740419088149909,"score_gpt":0.22460679086305504,"score_spread":0.20986637177490514,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2159574133","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.43062347,0.0000921645,0.56647056,0.000038537055,0.00011770925,0.0011779744,0.0002970025,0.00094082963,0.00024177559],"genre_scores_gemma":[0.997605,0.00016002187,0.00041936035,0.000027027041,0.00002676713,0.0015419602,0.00006018077,0.000079668425,0.000079985555],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9986479,0.000011606722,0.0003828271,0.00033015493,0.00018594554,0.00044152487],"domain_scores_gemma":[0.9993232,0.00009244891,0.00006445943,0.00032954843,0.00013580748,0.000054553107],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.00005934997,0.0002868215,0.00030796026,0.00036987392,0.00023591996,0.000029022829,0.000245086,0.00013833896,0.000016676817],"category_scores_gemma":[0.000003823789,0.0003146992,0.000163092,0.0005655488,0.00007140826,0.00055851677,8.201286e-7,0.00030419335,0.000009090715],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00005169282,0.00032666215,0.00035915244,0.00020286102,0.0002648847,0.0000015227572,0.00068315177,0.0033029222,0.9757736,0.00017158214,0.00006880449,0.018793184],"study_design_scores_gemma":[0.00038347204,0.000103308565,0.0008318893,0.00003102085,0.00007129496,0.000019034685,0.00010366853,0.009709901,0.98186225,0.00008130374,0.0064273737,0.00037547335],"about_ca_topic_score_codex":0.0000062484564,"about_ca_topic_score_gemma":0.000065640845,"teacher_disagreement_score":0.56698155,"about_ca_system_score_codex":0.00017848711,"about_ca_system_score_gemma":0.000047798727,"threshold_uncertainty_score":0.9999305},"labels":[],"label_agreement":null},{"id":"W2162157834","doi":"10.1109/ted.2003.822348","title":"Ultralow Silicon Substrate Noise Crosstalk Using Metal Faraday Cages in an SOI Technology","year":2004,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Radio Frequency Integrated Circuit Design","field":"Engineering","cited_by":39,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Silicon on insulator; Crosstalk; Materials science; Silicon; Optoelectronics; Faraday cage; CMOS; Electronic engineering; Electrical engineering; Engineering; Physics","score_opus":0.015527227970176933,"score_gpt":0.2505557788161603,"score_spread":0.23502855084598337,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2162157834","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9329235,0.00067735265,0.06464437,0.000049866045,0.00027979346,0.0002846329,0.000019129206,0.0007682647,0.0003530963],"genre_scores_gemma":[0.9993764,0.00009896969,0.00029773999,0.00002869567,0.000027153208,0.00006529099,0.0000044231947,0.00008347101,0.00001783975],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9982139,0.00004722949,0.0004008896,0.00041274336,0.00019397262,0.0007312984],"domain_scores_gemma":[0.9993983,0.00003116012,0.00004765543,0.00037084162,0.000051500396,0.00010052814],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.00012596158,0.00038027557,0.00034327758,0.0007616244,0.00014346348,0.00010648424,0.00031521518,0.0003183175,0.00003527862],"category_scores_gemma":[0.0000023808357,0.0004045425,0.00010099677,0.001142631,0.00011123026,0.0008677795,6.6284514e-8,0.0008199359,0.000032818094],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0000085794745,0.00006438949,0.000059226248,0.000016369488,0.000045920176,0.000027000144,0.000108449756,0.44787198,0.55029494,0.00007786073,3.0770659e-7,0.0014249525],"study_design_scores_gemma":[0.0005648016,0.00025027193,0.00026206227,0.000055014338,0.000058686124,0.00008845864,0.00020250677,0.007266643,0.99007356,0.0007368136,0.000019705014,0.0004214904],"about_ca_topic_score_codex":0.00039600697,"about_ca_topic_score_gemma":0.0045938557,"teacher_disagreement_score":0.44060534,"about_ca_system_score_codex":0.00063244265,"about_ca_system_score_gemma":0.00013242323,"threshold_uncertainty_score":0.9998406},"labels":[],"label_agreement":null},{"id":"W2163115331","doi":"10.1109/ted.2003.809430","title":"Experimental investigations of the effect of the mode-hopping on the noise properties of InGaAsP fabry-perot multiple-quantum-well laser diodes","year":2003,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Semiconductor Quantum Structures and Devices","field":"Physics and Astronomy","cited_by":11,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McMaster University; Nortel (Canada)","funders":"","keywords":"Materials science; Active layer; Optoelectronics; Diode; Noise (video); Laser; Semiconductor laser theory; Optics; Physics; Layer (electronics)","score_opus":0.01495146644773166,"score_gpt":0.23646776637302855,"score_spread":0.2215162999252969,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2163115331","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9978628,0.00017388145,0.0006625616,0.00011292509,0.00022049398,0.0005895021,0.000037564452,0.000013354048,0.0003268775],"genre_scores_gemma":[0.9997386,0.0000030344752,0.000011719756,0.0000636235,0.0000259171,0.000088963345,0.0000010126345,0.000022493306,0.00004465774],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9985614,0.0003288705,0.00036251056,0.00021757424,0.0002965098,0.00023317242],"domain_scores_gemma":[0.9988453,0.00029550778,0.00029511307,0.00047540048,0.00005465358,0.000034060715],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00013816507,0.00024257737,0.0002803727,0.000057540616,0.00035661008,0.00002263397,0.00038524184,0.000052156505,0.00007394732],"category_scores_gemma":[0.000010339735,0.000113850576,0.00029988168,0.00031002788,0.00027937954,0.000117988515,0.0000039028255,0.00031837472,0.0000021365981],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00011365162,0.00020535526,0.007900078,0.00009706028,0.00025355117,4.2067697e-8,0.001408735,0.017894503,0.9678073,0.0039057375,0.000024188474,0.00038977625],"study_design_scores_gemma":[0.00040314553,0.00022759222,0.00026083642,0.00019231834,0.000086306376,7.0078704e-7,0.0007154393,0.0030663474,0.99465525,0.00021357213,0.00005659175,0.00012190604],"about_ca_topic_score_codex":0.00042705884,"about_ca_topic_score_gemma":0.000039446677,"teacher_disagreement_score":0.026847923,"about_ca_system_score_codex":0.000027111937,"about_ca_system_score_gemma":0.00007015001,"threshold_uncertainty_score":0.46426916},"labels":[],"label_agreement":null},{"id":"W2163724016","doi":"10.1109/16.936699","title":"Interpretation of the common-emitter offset voltage in heterojunction bipolar transistors","year":2001,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":4,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Institute for Microstructural Sciences","funders":"","keywords":"Bipolar junction transistor; Heterojunction bipolar transistor; Common emitter; Input offset voltage; Heterojunction; Offset (computer science); Heterostructure-emitter bipolar transistor; Optoelectronics; Materials science; Transistor; Voltage; Electrical engineering; Electronic engineering; Computer science; Engineering; Operational amplifier","score_opus":0.009915100817555183,"score_gpt":0.2289038331874954,"score_spread":0.21898873236994024,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2163724016","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.7604969,0.0006236664,0.23746836,0.000029891864,0.000700974,0.00022845442,0.000010088484,0.00008951979,0.00035210626],"genre_scores_gemma":[0.9993996,0.00026366918,0.000020428253,0.00012198984,0.000020688964,0.000036707395,0.0000029275432,0.000028993034,0.000104995015],"study_design_codex":"simulation_or_modeling","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99904394,0.00004659406,0.00032917998,0.00016909698,0.00017838733,0.00023281995],"domain_scores_gemma":[0.99960864,0.00004656135,0.00005754211,0.00023815116,0.00002119815,0.000027937225],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00009636124,0.00016937085,0.00018478163,0.000163006,0.00006470636,0.000012981956,0.0001845258,0.00008517398,0.00007452771],"category_scores_gemma":[7.432834e-7,0.00014418336,0.00010454031,0.0004298093,0.00004128402,0.00027326963,3.5532344e-7,0.00032787985,0.000009331366],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00016328627,0.00033680128,0.004827213,0.0002375046,0.00022975581,0.000004751496,0.002216721,0.5205045,0.26765847,0.000053428303,0.00015490579,0.20361272],"study_design_scores_gemma":[0.0016940557,0.00045441402,0.007291676,0.00045031914,0.00021563549,0.000052021354,0.0005038794,0.15699604,0.8020263,0.00044742995,0.028954236,0.000914013],"about_ca_topic_score_codex":0.00005663719,"about_ca_topic_score_gemma":0.0011221629,"teacher_disagreement_score":0.5343678,"about_ca_system_score_codex":0.00015664476,"about_ca_system_score_gemma":0.000011192569,"threshold_uncertainty_score":0.5879627},"labels":[],"label_agreement":null},{"id":"W2164606487","doi":"10.1109/ted.2006.870284","title":"Electrical-stress effects and device modeling of 0.18-/spl mu/m RF MOSFETs","year":2006,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Radio Frequency Integrated Circuit Design","field":"Engineering","cited_by":19,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"National Research Council Canada","funders":"","keywords":"MOSFET; Materials science; Stress (linguistics); Optoelectronics; Electrical engineering; Electronic engineering; Voltage; Engineering; Transistor","score_opus":0.008911326662019091,"score_gpt":0.21681945002893682,"score_spread":0.20790812336691772,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2164606487","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.59194165,0.0040229238,0.39758995,0.000019060197,0.00022701191,0.00038794067,0.00002037185,0.0005087235,0.0052823867],"genre_scores_gemma":[0.9991462,0.0003039818,0.00024219624,0.00003159839,0.0000502893,0.000079773126,0.000004866272,0.000074018695,0.00006705825],"study_design_codex":"simulation_or_modeling","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99836886,0.000060877774,0.000419115,0.0003368115,0.00026920316,0.0005451107],"domain_scores_gemma":[0.99933624,0.0001626836,0.000054599986,0.00027631558,0.000080371065,0.00008980554],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.00011312338,0.00034066188,0.00037169788,0.0003381767,0.00010890747,0.000044269913,0.00020094315,0.00019891368,0.000024606688],"category_scores_gemma":[0.0000037632374,0.00034663503,0.000104162275,0.0006410738,0.000039886443,0.0002628366,1.4552496e-7,0.00050061505,0.000016388169],"study_design_candidate":"simulation_or_modeling","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000021127205,0.0001170677,0.000081605845,0.0002748119,0.00014299888,0.000009294475,0.00006452031,0.7771298,0.21516226,0.00020874546,0.000077683806,0.0067100585],"study_design_scores_gemma":[0.00031703227,0.00015539734,0.00009153009,0.00010207427,0.00010465671,0.00002111629,0.000009453042,0.35201517,0.64658666,0.00026255668,0.0000572116,0.00027716457],"about_ca_topic_score_codex":0.00036570217,"about_ca_topic_score_gemma":0.00035427214,"teacher_disagreement_score":0.43142438,"about_ca_system_score_codex":0.00017340636,"about_ca_system_score_gemma":0.000043847664,"threshold_uncertainty_score":0.99989855},"labels":[],"label_agreement":null},{"id":"W2165443356","doi":"10.1109/ted.2003.812481","title":"Static characteristics of a-Si:H dual-gate TFTs","year":2003,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":52,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Thin-film transistor; Materials science; Threshold voltage; Subthreshold conduction; Optoelectronics; Transistor; Logic gate; Electrical engineering; Amorphous silicon; Subthreshold slope; Voltage; Dual (grammatical number); Leakage (economics); Silicon; Nanotechnology; Engineering; Crystalline silicon","score_opus":0.008200221896869706,"score_gpt":0.20898360732042048,"score_spread":0.2007833854235508,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2165443356","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.854245,0.00033564662,0.14215003,0.00008408959,0.0005715936,0.00023280179,0.0000630643,0.0010973939,0.0012204011],"genre_scores_gemma":[0.9983983,0.00031406034,0.0010093458,0.00003716882,0.000008028813,0.000038272945,0.000002347352,0.000053443895,0.00013899877],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9988498,0.000035967114,0.0003485562,0.00019423175,0.00019473834,0.00037666847],"domain_scores_gemma":[0.9994391,0.00008625447,0.000056378616,0.00032254995,0.00004520136,0.00005050321],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00009959658,0.0002330359,0.00029540694,0.00023867626,0.00006885493,0.000019314766,0.0001479842,0.00013512243,0.00008955278],"category_scores_gemma":[0.0000061927417,0.00024435634,0.00009369753,0.0003547031,0.000066149354,0.00015163465,2.4326482e-7,0.00037298378,0.0000541279],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00016229296,0.0011178362,0.00041415752,0.0023471224,0.0016108596,0.00006469723,0.002511107,0.19319576,0.7288233,0.005881294,0.0007811841,0.06309037],"study_design_scores_gemma":[0.00040549287,0.00023208282,0.0008098983,0.000071374896,0.00012228632,0.000019604611,0.00010685525,0.0026252721,0.9865326,0.00027309018,0.008392012,0.00040938068],"about_ca_topic_score_codex":0.000008703408,"about_ca_topic_score_gemma":0.00008582662,"teacher_disagreement_score":0.25770932,"about_ca_system_score_codex":0.000102915794,"about_ca_system_score_gemma":0.000032326647,"threshold_uncertainty_score":0.99645627},"labels":[],"label_agreement":null},{"id":"W2170700498","doi":"10.1109/16.974742","title":"Preparation of thin-film transistors with chemical bath deposited CdSe and CdS thin films","year":2002,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":80,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McGill University","funders":"","keywords":"Thin-film transistor; Threshold voltage; Subthreshold slope; Materials science; Optoelectronics; Subthreshold conduction; Transistor; Field effect; Thin film; Chemical bath deposition; Electron mobility; Semiconductor; Voltage; Analytical Chemistry (journal); Layer (electronics); Electrical engineering; Nanotechnology; Chemistry; Band gap","score_opus":0.007447771377316327,"score_gpt":0.2084867310704171,"score_spread":0.20103895969310076,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2170700498","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.93822753,0.0013703131,0.05795381,0.00010979026,0.000112808935,0.0003110634,0.000024795485,0.0011490751,0.000740822],"genre_scores_gemma":[0.9970043,0.00028733088,0.0024426098,0.00002821618,0.000009743318,0.00006081091,0.0000039554975,0.000055138982,0.0001079041],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99870116,0.000029163715,0.00033032385,0.00032548615,0.00027124293,0.00034260677],"domain_scores_gemma":[0.999428,0.00007765333,0.000056594577,0.0003228295,0.00004417896,0.00007079332],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.00006917964,0.00030970626,0.0003270413,0.00025068852,0.000099477074,0.00003064405,0.00019674898,0.00023854013,0.00007659139],"category_scores_gemma":[0.0000023710002,0.00028491832,0.000087693064,0.00044132638,0.00013063141,0.00031492554,4.986261e-7,0.00047198535,0.000008319886],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00038264706,0.0005662612,0.00015914656,0.0006437721,0.0007154443,0.000015606916,0.005883887,0.34208214,0.64184386,0.00015939369,0.00066910073,0.0068787076],"study_design_scores_gemma":[0.0005946569,0.00042156043,0.00015122595,0.00007472206,0.00017475543,0.00004107911,0.00012358378,0.105642214,0.8921125,0.000017213268,0.00028985718,0.00035662163],"about_ca_topic_score_codex":0.000039207534,"about_ca_topic_score_gemma":0.00039473455,"teacher_disagreement_score":0.25026864,"about_ca_system_score_codex":0.00009127266,"about_ca_system_score_gemma":0.000012714783,"threshold_uncertainty_score":0.9999603},"labels":[],"label_agreement":null},{"id":"W2170926317","doi":"10.1109/ted.2005.843876","title":"Effect of Doped Substrate on GaAs–AlGaAs Interfacial Workfunction IR Detector Response Through Cavity Effect","year":2005,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Semiconductor Quantum Structures and Devices","field":"Physics and Astronomy","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Institute for Microstructural Sciences","funders":"","keywords":"Responsivity; Substrate (aquarium); Doping; Materials science; Optoelectronics; Heterojunction; Resonance (particle physics); Detector; Quantum efficiency; Analytical Chemistry (journal); Optics; Photodetector; Chemistry; Physics; Atomic physics","score_opus":0.008505104334454828,"score_gpt":0.2747713982602652,"score_spread":0.26626629392581036,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2170926317","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9922776,0.00012415535,0.005708821,0.00007834768,0.0006182211,0.00055263116,0.000054707667,0.000113549075,0.00047196372],"genre_scores_gemma":[0.99925476,0.000007470879,0.00004011283,0.0000701512,0.00032522986,0.00009319826,0.000010346235,0.000048293765,0.00015044445],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9975013,0.0006543555,0.00043890913,0.00053995545,0.0003377775,0.0005276623],"domain_scores_gemma":[0.9982557,0.0009156799,0.00025298042,0.00041852368,0.000056278495,0.00010081302],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.0004911839,0.00048959354,0.00054531527,0.00018135503,0.0002734732,0.00007242662,0.00025067755,0.00014508137,0.00056352647],"category_scores_gemma":[0.00000548575,0.00038872886,0.00036705588,0.00038597625,0.00008508677,0.00037700095,0.0000019002899,0.0006146514,0.00010678474],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.048863497,0.0007498823,0.0036045942,0.00028379977,0.0011674124,0.000006015665,0.0011289357,0.022552239,0.69806886,0.0004008722,0.00018372874,0.22299014],"study_design_scores_gemma":[0.0016132188,0.0045648036,0.0015556094,0.00009120656,0.00020104351,0.0000035478624,0.00003256503,0.0004329006,0.9899715,0.00006653888,0.0011178398,0.000349185],"about_ca_topic_score_codex":0.0003459542,"about_ca_topic_score_gemma":0.0001815778,"teacher_disagreement_score":0.29190266,"about_ca_system_score_codex":0.00011886626,"about_ca_system_score_gemma":0.000058938927,"threshold_uncertainty_score":0.9998565},"labels":[],"label_agreement":null},{"id":"W2219472191","doi":"10.1109/ted.2015.2503718","title":"Recent Developments and Design Challenges of High-Performance Ring Oscillator CMOS Time-to-Digital Converters","year":2015,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Advancements in PLL and VCO Technologies","field":"Engineering","cited_by":97,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McMaster University","funders":"Natural Sciences and Engineering Research Council of Canada; Canada Research Chairs; FedDev Ontario; Canada Foundation for Innovation; CMC Microsystems","keywords":"CMOS; Electronic engineering; Ring oscillator; Converters; Computer science; Noise (video); Phase noise; Time-to-digital converter; Dynamic range; Engineering; Electrical engineering; Jitter; Voltage; Artificial intelligence","score_opus":0.023505477899070724,"score_gpt":0.22257596262348506,"score_spread":0.19907048472441433,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2219472191","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.8026789,0.0017113424,0.19301634,0.00015615729,0.00031185074,0.00038121248,0.000012000455,0.00067802117,0.0010541998],"genre_scores_gemma":[0.9948015,0.0023181178,0.0026963106,0.000019602156,0.000007153123,0.00003716557,7.317618e-7,0.000022650578,0.00009673414],"study_design_codex":"design_other","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9992367,0.0000080522805,0.00017793062,0.00017238727,0.00015452651,0.00025039524],"domain_scores_gemma":[0.99969584,0.000033799734,0.000028983266,0.00012915723,0.000042567364,0.00006966712],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00007468221,0.00016050064,0.00017428302,0.00014633058,0.000046631343,0.000017606984,0.00012526804,0.00006366038,0.000011246366],"category_scores_gemma":[0.000003369293,0.00015414495,0.00001258547,0.00016389554,0.000034181634,0.00028009893,0.0000019244633,0.00011922468,0.00006021874],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000090342844,0.00005841635,0.000040422725,0.00008682359,0.00016392722,0.000001163391,0.00033901524,0.10847214,0.0030254063,0.000020306676,0.00010469365,0.8875973],"study_design_scores_gemma":[0.0011341294,0.0010610761,0.00047153642,0.00019962613,0.000044674445,0.00001564162,0.00035119307,0.023768209,0.9579862,0.0001604782,0.01414121,0.00066607643],"about_ca_topic_score_codex":0.0000010881176,"about_ca_topic_score_gemma":0.0000035079183,"teacher_disagreement_score":0.95496076,"about_ca_system_score_codex":0.0001058995,"about_ca_system_score_gemma":0.000023818791,"threshold_uncertainty_score":0.62858486},"labels":[],"label_agreement":null},{"id":"W2245372074","doi":"10.1109/ted.2015.2508672","title":"Characterization of Lag Signal in Amorphous Selenium Detectors","year":2016,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Advanced Semiconductor Detectors and Materials","field":"Engineering","cited_by":3,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Concordia University; University of Waterloo","funders":"","keywords":"Photocurrent; Detector; SIGNAL (programming language); Intensity (physics); Materials science; Light intensity; Lag; Optoelectronics; Electric field; Optics; Current (fluid); Residual; Physics; Mathematics; Computer science","score_opus":0.0071096875851963575,"score_gpt":0.20551694516110894,"score_spread":0.19840725757591257,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2245372074","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9306492,0.00003061675,0.06865669,0.000005500434,0.0003042869,0.00013310299,0.000039975945,0.00015133024,0.00002929465],"genre_scores_gemma":[0.9996267,0.0001306556,0.00006063402,0.000009282221,0.00003354513,0.0000349323,0.0000018647231,0.000036333655,0.00006603784],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9992036,0.000026681098,0.00026323652,0.00015207157,0.000103830396,0.0002505629],"domain_scores_gemma":[0.9997198,0.00004576025,0.00004901349,0.00012302934,0.000023693061,0.00003870316],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000058923797,0.00015121837,0.00020029314,0.00018509451,0.000024405654,0.000008379389,0.00009050712,0.00008323477,0.0002073122],"category_scores_gemma":[9.95122e-7,0.0001200997,0.00004679427,0.00019667672,0.000021875947,0.00023907119,3.3354507e-7,0.000087525324,0.000017675404],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00003384741,0.000023739745,0.00003733176,0.00003267743,0.00001481789,8.4372107e-7,0.00004391357,0.0015587397,0.99256605,0.0000021987025,0.0000011447446,0.005684669],"study_design_scores_gemma":[0.00029286704,0.000103803424,0.00071464345,0.000057079822,0.000010452084,0.0000040196173,0.0000051416996,0.00020087618,0.9982141,0.00002298049,0.0002237066,0.00015029697],"about_ca_topic_score_codex":0.000013396898,"about_ca_topic_score_gemma":0.00013942098,"teacher_disagreement_score":0.06897751,"about_ca_system_score_codex":0.000091903974,"about_ca_system_score_gemma":0.000014796264,"threshold_uncertainty_score":0.48975235},"labels":[],"label_agreement":null},{"id":"W2303295990","doi":"10.1109/ted.2016.2529301","title":"Reverse Gate-Current of AlGaN/GaN HFETs: Evidence of Leakage at Mesa Sidewalls","year":2016,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":27,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Concordia University","funders":"","keywords":"Optoelectronics; Materials science; Quantum tunnelling; Leakage (economics); Fabrication; Transistor; Heterojunction; Voltage; Electrical engineering","score_opus":0.022610526616757748,"score_gpt":0.280222803025538,"score_spread":0.25761227640878026,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2303295990","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.98950994,0.0004454505,0.008698561,0.00020526034,0.0004280169,0.00029199128,0.00018289521,0.000035733032,0.00020213916],"genre_scores_gemma":[0.9990786,0.00018595128,0.00005544638,0.00003223927,0.00006995119,0.000036195284,0.000004150154,0.00002776773,0.00050973793],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99835956,0.00010916833,0.000539118,0.0003520795,0.0002702031,0.00036988512],"domain_scores_gemma":[0.9987024,0.00027348704,0.00038476,0.00041117822,0.00013147722,0.00009668059],"candidate_categories":["insufficient_payload"],"consensus_categories":[],"category_scores_codex":[0.00021677515,0.0002524054,0.00042106345,0.00013050911,0.000091438254,0.000015160481,0.0002736264,0.00005715746,0.0016843915],"category_scores_gemma":[0.0000030048066,0.00018515355,0.0002285738,0.00018702197,0.00009342025,0.00031970107,0.0000025067286,0.00011855416,0.000083323444],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00015682055,0.00022341151,0.0007032713,0.00016597172,0.00012823491,4.4043338e-7,0.00015607856,0.00013500541,0.98828304,0.00017404626,0.00016155699,0.00971213],"study_design_scores_gemma":[0.00051860913,0.00028127866,0.00032828905,0.0006244688,0.0001350717,8.8795747e-7,0.000058691425,0.000012738535,0.9951309,0.00018516585,0.002508749,0.00021516325],"about_ca_topic_score_codex":0.00036907825,"about_ca_topic_score_gemma":0.00021331693,"teacher_disagreement_score":0.009568608,"about_ca_system_score_codex":0.00005910457,"about_ca_system_score_gemma":0.00010411807,"threshold_uncertainty_score":0.9992282},"labels":[],"label_agreement":null},{"id":"W2318687969","doi":"10.1109/ted.2014.2341249","title":"Enhanced Dark Current Suppression of Amorphous Selenium Detector With Use of IGZO Hole Blocking Layer","year":2014,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"ZnO doping and properties","field":"Materials Science","cited_by":18,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Dark current; Detector; Optoelectronics; Electric field; Diode; Indium tin oxide; Materials science; Amorphous solid; Active layer; Analytical Chemistry (journal); Layer (electronics); Physics; Photodetector; Optics; Nanotechnology; Chemistry; Thin-film transistor; Crystallography","score_opus":0.02261463266860577,"score_gpt":0.25157949070922486,"score_spread":0.22896485804061908,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2318687969","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.925441,0.00017599463,0.073778324,0.000022212758,0.00029900172,0.00014278501,0.000015250246,0.00007581537,0.000049577375],"genre_scores_gemma":[0.9991586,0.00003701973,0.0006367091,0.000020303392,0.000026443886,0.000026089041,0.0000011667156,0.000023034716,0.00007062349],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99870527,0.00014046447,0.00028340358,0.00027575454,0.00030340924,0.00029168115],"domain_scores_gemma":[0.99920243,0.00013639491,0.0001914832,0.0002920292,0.0001253172,0.0000523244],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00017509832,0.00017319487,0.0002744029,0.00011512838,0.000128305,0.00003795668,0.00016608016,0.000059885417,0.00010107423],"category_scores_gemma":[0.000006557441,0.00012500973,0.000062882755,0.00018411835,0.00009114511,0.00024822587,0.0000015240636,0.00017146247,0.000014732221],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00027464438,0.00012495737,0.00006486036,0.00013481046,0.000015133762,1.15345905e-7,0.00025029347,0.033065334,0.9627388,0.0000040468553,0.000020541052,0.0033064713],"study_design_scores_gemma":[0.00032180196,0.0006894977,0.0003336527,0.00031275663,0.000053621086,0.0000019288077,0.000016234995,0.002107108,0.995525,0.0000061863684,0.00047184795,0.00016035949],"about_ca_topic_score_codex":0.00021832334,"about_ca_topic_score_gemma":0.0003614867,"teacher_disagreement_score":0.07371757,"about_ca_system_score_codex":0.000026726253,"about_ca_system_score_gemma":0.000057843987,"threshold_uncertainty_score":0.50977486},"labels":[],"label_agreement":null},{"id":"W2331691546","doi":"10.1109/ted.2014.2339011","title":"Impact of Isolation-Feature Geometry on Self-Heating of AlGaN/GaN HFETs","year":2014,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":2,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Concordia University","funders":"CMC Microsystems","keywords":"Materials science; Transistor; Heterojunction; Optoelectronics; Enhanced Data Rates for GSM Evolution; Channel (broadcasting); Field-effect transistor; Wide-bandgap semiconductor; Millimeter; Electrical engineering; Voltage; Optics; Engineering; Physics; Telecommunications","score_opus":0.006958219583511566,"score_gpt":0.25836192578263,"score_spread":0.25140370619911845,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2331691546","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9866418,0.000028485227,0.011673706,0.000029956604,0.00017568143,0.00018949492,0.00008693826,0.000045648736,0.001128264],"genre_scores_gemma":[0.9994048,0.000004720141,0.000297634,0.000030644456,0.000116634954,0.000013993758,0.00001977941,0.000029678597,0.00008215027],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99881274,0.00008705068,0.00033730964,0.000256796,0.00020228642,0.00030384638],"domain_scores_gemma":[0.99904156,0.00018561893,0.00030437805,0.00029074564,0.00010398564,0.00007373651],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00016909486,0.00023541844,0.0003714302,0.00021286363,0.00010720756,0.00002502827,0.00016352044,0.00008688763,0.0003652226],"category_scores_gemma":[0.0000017439999,0.00019908036,0.00026036246,0.00030323138,0.00002475863,0.00015169154,6.7803745e-7,0.0002278917,0.000013825733],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00027724745,0.0014535305,0.02203492,0.00026498272,0.0011429788,2.9595088e-7,0.0007346247,0.02958433,0.93005824,0.0011670302,0.00016687484,0.013114917],"study_design_scores_gemma":[0.00079851673,0.001376297,0.010945934,0.00012409061,0.00017056844,9.744998e-7,0.00007582319,0.0022658044,0.9834149,0.0002642751,0.00025958795,0.0003032202],"about_ca_topic_score_codex":0.0006693139,"about_ca_topic_score_gemma":0.00004111235,"teacher_disagreement_score":0.05335664,"about_ca_system_score_codex":0.000035274737,"about_ca_system_score_gemma":0.000075642005,"threshold_uncertainty_score":0.8118261},"labels":[],"label_agreement":null},{"id":"W2332905384","doi":"10.1109/ted.2016.2537879","title":"A Comprehensive and Accurate Analytical SPAD Model for Circuit Simulation","year":2016,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Advanced Optical Sensing Technologies","field":"Physics and Astronomy","cited_by":62,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McMaster University","funders":"Canada Foundation for Innovation; Canadian Cancer Society; CMC Microsystems","keywords":"Computer science; Single-photon avalanche diode; Electronic engineering; Photon counting; Semiconductor device modeling; Photodetector; Sensitivity (control systems); Detector; Avalanche photodiode; Engineering; Physics; Optoelectronics; CMOS","score_opus":0.043087302684951874,"score_gpt":0.31443356861456034,"score_spread":0.2713462659296085,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2332905384","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.14299749,0.00001571182,0.8561389,0.000405068,0.000025538486,0.00019381363,0.000030773845,0.000108929285,0.0000838132],"genre_scores_gemma":[0.9971897,0.000006003707,0.00245245,0.000048811442,0.000024041716,0.000027995691,0.0000014775446,0.000016570299,0.00023291982],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99923354,0.000011501992,0.00014420904,0.00025968245,0.000079758414,0.00027132113],"domain_scores_gemma":[0.9992718,0.00040445515,0.000049132756,0.00015005794,0.00007750386,0.000047015517],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000025202964,0.00014135707,0.00015788335,0.00006738692,0.00014019375,0.000025543146,0.000069381385,0.000053060685,0.000014645028],"category_scores_gemma":[0.000002929369,0.00010338956,0.00006487371,0.000096343334,0.00008528615,0.00018561987,9.921388e-7,0.00010517373,0.000009037084],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00022017004,0.00020309443,0.0001328063,0.00002382028,0.00022469719,5.1996585e-7,0.00008066498,0.5756531,0.01891171,0.036795523,0.000024236033,0.36772966],"study_design_scores_gemma":[0.0006312572,0.00015617104,0.00008019657,0.000026840522,0.000064118445,4.893355e-7,0.000029989505,0.93160003,0.028403403,0.038300354,0.00050028146,0.0002068499],"about_ca_topic_score_codex":0.0000046318946,"about_ca_topic_score_gemma":0.000008037528,"teacher_disagreement_score":0.85419226,"about_ca_system_score_codex":0.00003475229,"about_ca_system_score_gemma":0.00001957134,"threshold_uncertainty_score":0.4216104},"labels":[],"label_agreement":null},{"id":"W2334089083","doi":"10.1109/ted.2014.2348540","title":"Lateral Organic Semiconductor Photodetector. Part I: Use of an Insulating Layer for Low Dark Current","year":2014,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Organic Electronics and Photovoltaics","field":"Engineering","cited_by":11,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Polytechnique Montréal; University of Waterloo","funders":"","keywords":"Photodetector; Dark current; Materials science; Image sensor; Optoelectronics; Organic semiconductor; Semiconductor; Computer science; Electrical engineering; Electronic engineering; Engineering; Artificial intelligence","score_opus":0.01926153340483677,"score_gpt":0.24118075149497073,"score_spread":0.22191921809013396,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2334089083","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9697625,0.0001736238,0.028862817,0.000008309761,0.00057853526,0.00031268003,0.00006250389,0.00022399065,0.000015052084],"genre_scores_gemma":[0.99935436,0.000101883474,0.00020810717,0.000037992737,0.000109809676,0.00004841111,0.000015984357,0.00008904054,0.000034434062],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9987157,0.00004188073,0.00034757383,0.0002662255,0.00015778415,0.00047080882],"domain_scores_gemma":[0.999305,0.00013979428,0.00007317188,0.00031087713,0.00007338303,0.00009774681],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.00014388468,0.00025173905,0.00027420744,0.00011971788,0.00011536122,0.000054175995,0.00016375826,0.00011249373,0.00007520884],"category_scores_gemma":[0.000005948544,0.00025660047,0.00010583999,0.00024379113,0.00001893115,0.00032080177,7.655481e-7,0.00036072574,0.000007026884],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000035715493,0.00010494035,0.000028828992,0.00016617768,0.00007620805,1.2671052e-7,0.00013785851,0.014960768,0.97928077,0.000020290807,0.00004853374,0.0051397984],"study_design_scores_gemma":[0.00040023687,0.00039037745,0.00004267202,0.000053969543,0.000056767043,0.0000031965558,0.000004495765,0.070034236,0.9238997,0.00009160602,0.004755257,0.0002674516],"about_ca_topic_score_codex":0.000027096738,"about_ca_topic_score_gemma":0.00058029575,"teacher_disagreement_score":0.05538102,"about_ca_system_score_codex":0.000107790955,"about_ca_system_score_gemma":0.000051160707,"threshold_uncertainty_score":0.9999886},"labels":[],"label_agreement":null},{"id":"W2414490626","doi":"10.1109/ted.2016.2572719","title":"Effective Drive Current for Pass-Gate Transistors","year":2016,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":10,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Transistor; CMOS; Computer science; Electrical engineering; Electronic engineering; Physics; Topology (electrical circuits); Algorithm; Voltage; Optoelectronics; Engineering","score_opus":0.011663053404151138,"score_gpt":0.2524135424654895,"score_spread":0.2407504890613384,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2414490626","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.07130188,0.0011338429,0.92456126,0.000052089323,0.001438964,0.0007863043,0.00008468596,0.00039299272,0.0002479893],"genre_scores_gemma":[0.99824274,0.00055382715,0.00015634028,0.000045755474,0.000110827816,0.0006487294,0.0000027674125,0.000067260735,0.00017177389],"study_design_codex":"design_other","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9987442,0.00003220085,0.00024651072,0.0003289569,0.00016576397,0.0004823903],"domain_scores_gemma":[0.9993427,0.000242084,0.000043995908,0.00022219782,0.000054992437,0.000094051684],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00009260162,0.0002819378,0.00024177402,0.00013319038,0.0001391846,0.000021592705,0.00017389085,0.00008293612,0.000077265824],"category_scores_gemma":[0.0000016744456,0.00021716967,0.00016974454,0.00016843865,0.000042264455,0.00030355662,2.088626e-7,0.00017620131,0.000054966145],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000097557684,0.00015284595,0.000023418961,0.00021688764,0.0003783158,0.0000011434071,0.0003201944,0.016048608,0.16173604,0.0002836446,0.00036184624,0.8203795],"study_design_scores_gemma":[0.0021617564,0.0007296646,0.00017063276,0.00029006856,0.0002725479,0.000006472697,0.000059246486,0.002827869,0.87460124,0.0010790282,0.11689,0.00091146474],"about_ca_topic_score_codex":0.0000026202345,"about_ca_topic_score_gemma":0.000070310125,"teacher_disagreement_score":0.92694086,"about_ca_system_score_codex":0.00027585364,"about_ca_system_score_gemma":0.000019692146,"threshold_uncertainty_score":0.8855922},"labels":[],"label_agreement":null},{"id":"W2466732169","doi":"10.1109/ted.2016.2586418","title":"Interfacial Contact Effects in Top Gated Zinc Oxide Thin Film Transistors Grown by Atomic Layer Deposition","year":2016,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"ZnO doping and properties","field":"Materials Science","cited_by":14,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Alberta","funders":"Science and Engineering Research Council; CMC Microsystems","keywords":"Thin-film transistor; Materials science; Atomic layer deposition; X-ray photoelectron spectroscopy; Optoelectronics; Schottky barrier; Electrode; Layer (electronics); Dielectric spectroscopy; Oxide; Nanotechnology; Chemical engineering; Metallurgy; Chemistry; Diode; Electrochemistry","score_opus":0.008787354544072113,"score_gpt":0.22938409706392424,"score_spread":0.22059674251985212,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2466732169","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9483942,0.00030072863,0.049799684,0.00042700375,0.00046444987,0.00026618302,0.000029157225,0.00019915187,0.00011944985],"genre_scores_gemma":[0.9989939,0.00006037858,0.00009187937,0.00025107872,0.000026994052,0.00006627229,0.0000029280181,0.000028454677,0.00047813254],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99834836,0.00025909566,0.00031999624,0.00040206255,0.00021164445,0.00045884217],"domain_scores_gemma":[0.99943113,0.0001858275,0.0000774349,0.00019305415,0.00003428233,0.00007829563],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00023696772,0.00024246423,0.0002729921,0.00015990052,0.00017519997,0.00007118835,0.00021235173,0.000146125,0.00019701003],"category_scores_gemma":[0.000005908362,0.00017273166,0.00009153392,0.00018087351,0.000058141122,0.0004507682,8.5573583e-7,0.00020198751,0.00023303727],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0004551454,0.00011694911,0.00007424654,0.00005120885,0.000020405127,0.0000043096984,0.0003771525,0.0008763168,0.9958895,0.00002136776,0.00020570307,0.0019077129],"study_design_scores_gemma":[0.00089946954,0.0004278076,0.00034482824,0.0002674985,0.000034329285,0.000009876887,0.000026430147,0.00087624486,0.99617773,0.0000485178,0.00062344316,0.0002638423],"about_ca_topic_score_codex":0.0008923333,"about_ca_topic_score_gemma":0.0018838503,"teacher_disagreement_score":0.05059969,"about_ca_system_score_codex":0.0002520245,"about_ca_system_score_gemma":0.0000734144,"threshold_uncertainty_score":0.70437926},"labels":[],"label_agreement":null},{"id":"W2508917673","doi":"10.1109/ted.2016.2602209","title":"Switching-Speed Limitations of Ferroelectric Negative-Capacitance FETs","year":2016,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Ferroelectric and Negative Capacitance Devices","field":"Engineering","cited_by":85,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Qualcomm (Canada); University of Alberta","funders":"Natural Sciences and Engineering Research Council of Canada; Alberta Innovates - Technology Futures","keywords":"Ferroelectricity; Capacitance; Negative impedance converter; Scaling; Materials science; Voltage; Subthreshold conduction; Switching time; Condensed matter physics; Optoelectronics; Physics; Transistor; Electrical engineering; Engineering; Electrode; Voltage divider; Mathematics; Dielectric; Quantum mechanics","score_opus":0.027742799586533817,"score_gpt":0.2256199519392315,"score_spread":0.1978771523526977,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2508917673","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.6002481,0.0009971288,0.39279234,0.00027773104,0.0003942052,0.00034843176,0.000038293903,0.0005319008,0.0043718885],"genre_scores_gemma":[0.9971331,0.0017720256,0.00040891435,0.00008611738,0.000049103615,0.000058364207,0.000001142239,0.00006644976,0.00042480166],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99814314,0.00008107907,0.00046407196,0.0003593446,0.00034367287,0.00060870254],"domain_scores_gemma":[0.9982815,0.000979543,0.00012618229,0.00031734552,0.00017568185,0.000119795775],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.0001469947,0.0003634723,0.00039218462,0.00045238188,0.00017070283,0.000024843777,0.00029553458,0.00013771567,0.00008502517],"category_scores_gemma":[0.00003341407,0.0002855852,0.00017857438,0.0011805717,0.000086956265,0.00054707436,3.9592126e-7,0.00034450777,0.000110391375],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00016117752,0.00024714778,0.00010799751,0.0001277625,0.00049411965,0.000004979641,0.0009163474,0.0079175355,0.84700704,0.0009663413,0.00045602943,0.1415935],"study_design_scores_gemma":[0.0008939888,0.00052903895,0.0010969139,0.00017083046,0.000086232234,0.000013942929,0.00010349586,0.0060316976,0.9887224,0.0010228703,0.0008301211,0.00049850944],"about_ca_topic_score_codex":0.000012149789,"about_ca_topic_score_gemma":0.00033397562,"teacher_disagreement_score":0.396885,"about_ca_system_score_codex":0.00022793784,"about_ca_system_score_gemma":0.000063718326,"threshold_uncertainty_score":0.99995965},"labels":[],"label_agreement":null},{"id":"W2512133602","doi":"10.1109/ted.2016.2597156","title":"Study of Gate Width Influence on Extrinsic Transconductance in AlGaN/GaN Heterostructure Field-Effect Transistors With Polarization Coulomb Field Scattering","year":2016,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":20,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Alberta","funders":"National Natural Science Foundation of China","keywords":"Transconductance; Scattering; Optoelectronics; Materials science; Heterojunction; Field-effect transistor; Polarization (electrochemistry); Condensed matter physics; Transistor; Optics; Physics; Chemistry; Voltage","score_opus":0.0072753472537653505,"score_gpt":0.24141056316345763,"score_spread":0.23413521590969227,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2512133602","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9939165,0.000018202896,0.004984678,0.00015558692,0.00016473338,0.0006369385,0.000028163005,0.000038218157,0.000056974946],"genre_scores_gemma":[0.9996598,0.0000049617524,0.00002102357,0.00013068272,0.000033447897,0.00008105418,0.0000029245805,0.000031884054,0.00003422556],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99850774,0.00012877778,0.00037388783,0.00042385946,0.00022333759,0.000342405],"domain_scores_gemma":[0.99921083,0.00020826141,0.00016077296,0.0003099983,0.000047339683,0.00006276752],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00010947093,0.00030769975,0.00038849693,0.00018751883,0.000100818535,0.000034425513,0.00019832308,0.00007921538,0.00014815728],"category_scores_gemma":[0.0000012434348,0.00021447007,0.00008165743,0.0002823773,0.000032099168,0.00032581895,5.4817747e-7,0.00023238658,0.000004308107],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0007530551,0.00044300506,0.017702252,0.00008756564,0.00016571904,0.0000040312534,0.000949517,0.0035408789,0.9627171,0.00003593482,0.000002244498,0.013598671],"study_design_scores_gemma":[0.002054771,0.0037884382,0.0064247334,0.00030036335,0.000096139636,0.0000018721555,0.00015266002,0.000013146507,0.9868054,0.000050534985,0.000021351056,0.00029058757],"about_ca_topic_score_codex":0.00066921127,"about_ca_topic_score_gemma":0.0013556364,"teacher_disagreement_score":0.024088277,"about_ca_system_score_codex":0.00004297412,"about_ca_system_score_gemma":0.000043063512,"threshold_uncertainty_score":0.87458354},"labels":[],"label_agreement":null},{"id":"W2528554296","doi":"10.1109/ted.2017.2671365","title":"a-Si:H TFT-Silicon Hybrid Low-Energy X-Ray Detector","year":2017,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Advanced X-ray Imaging Techniques","field":"Physics and Astronomy","cited_by":5,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Natural Sciences and Engineering Research Council of Canada; Canada Foundation for Innovation","keywords":"Silicon; Thin-film transistor; Detector; X-ray detector; Amorphous silicon; Optoelectronics; Pixel; Transistor; Diffraction; Image resolution; Materials science; Optics; Photon; Physics; Crystalline silicon; Nanotechnology; Voltage","score_opus":0.008909467677079555,"score_gpt":0.2659811684435384,"score_spread":0.25707170076645885,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2528554296","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.16474217,0.000065166874,0.8305716,0.0003113865,0.0003180832,0.0001949374,0.000049573657,0.00037627612,0.0033708427],"genre_scores_gemma":[0.99688536,0.000020672198,0.0013477579,0.00015400532,0.00022256823,0.00015920044,0.0000069058988,0.00006429254,0.0011392619],"study_design_codex":"design_other","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99839276,0.000048505342,0.00027048695,0.00049762276,0.00022637764,0.00056425517],"domain_scores_gemma":[0.9985242,0.0000679565,0.00023484333,0.0009665522,0.00008221486,0.0001242345],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.000095169664,0.000337011,0.00029650104,0.00013651157,0.00085937954,0.00022110445,0.000640158,0.000049912553,0.00027086472],"category_scores_gemma":[0.0000020889354,0.0003367842,0.000205019,0.00008150013,0.00012315126,0.0006473273,0.0000035551277,0.00040633677,0.00007756248],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0003962483,0.0017382664,0.0023765035,0.0000994437,0.00090609485,0.00002664209,0.00024126598,0.0053110677,0.25322583,0.00885999,0.0015563123,0.72526234],"study_design_scores_gemma":[0.00047407305,0.00017943235,0.00044008938,0.00006274709,0.00006833018,0.0000027877181,0.000022491962,0.0015614114,0.9813916,0.004561386,0.010765032,0.00047061712],"about_ca_topic_score_codex":0.0005626761,"about_ca_topic_score_gemma":0.00016855117,"teacher_disagreement_score":0.8321432,"about_ca_system_score_codex":0.00007768244,"about_ca_system_score_gemma":0.000074052325,"threshold_uncertainty_score":0.99990845},"labels":[],"label_agreement":null},{"id":"W2528586090","doi":"10.1109/ted.2016.2612586","title":"Viability of Piezojunction Effect for Microresonator Applications","year":2016,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Advanced MEMS and NEMS Technologies","field":"Engineering","cited_by":4,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Simon Fraser University","funders":"Natural Sciences and Engineering Research Council of Canada; Simon Fraser University; CMC Microsystems","keywords":"Capacitive sensing; Resonator; Diode; Biasing; Optoelectronics; Materials science; Power (physics); SIGNAL (programming language); Q factor; CMOS; Electrical engineering; Electronic engineering; Acoustics; Physics; Engineering; Voltage; Computer science","score_opus":0.005038736457590877,"score_gpt":0.2290443867138517,"score_spread":0.22400565025626082,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2528586090","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.3184172,0.00014712899,0.6803619,0.000051541043,0.00009433588,0.00045678474,0.0000321478,0.00039317625,0.000045798162],"genre_scores_gemma":[0.9977305,0.00013281965,0.0012376276,0.0000069086495,0.000017593678,0.00078065763,0.00000100329,0.000022477501,0.000070430986],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.999413,0.0000050480717,0.00015924539,0.00016332546,0.0000654787,0.00019388605],"domain_scores_gemma":[0.9994632,0.00022521382,0.000031549433,0.00021756678,0.00003777947,0.000024713388],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00007628843,0.0001232239,0.0001517276,0.000099185134,0.000063530744,0.000003954085,0.00009937889,0.0000907791,0.00001283836],"category_scores_gemma":[0.0000035329065,0.000088486755,0.00009037061,0.00015767592,0.00005002923,0.00010824248,3.039629e-7,0.00008198387,0.000009826788],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00004507968,0.000037703318,0.00002178107,0.00010558812,0.000037398113,3.039567e-8,0.0000059388935,0.0007110205,0.8198291,0.00009424535,0.000035454876,0.17907663],"study_design_scores_gemma":[0.00032327286,0.00027751047,0.00014360315,0.000020716032,0.000027383383,0.0000010035651,0.0000049986165,0.0001548538,0.987417,0.00061604765,0.0109070325,0.000106578824],"about_ca_topic_score_codex":0.000003056726,"about_ca_topic_score_gemma":0.00005604305,"teacher_disagreement_score":0.6793133,"about_ca_system_score_codex":0.00008295119,"about_ca_system_score_gemma":0.000009078092,"threshold_uncertainty_score":0.3608385},"labels":[],"label_agreement":null},{"id":"W2567923325","doi":"10.1109/ted.2016.2644202","title":"Biased Photoresponse Analysis of Al–ZnO Heterojunctions with n- and p-Type Silicon","year":2017,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Semiconductor materials and interfaces","field":"Physics and Astronomy","cited_by":13,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Heterojunction; Photocurrent; Materials science; Rectification; Optoelectronics; Silicon; Diode; Quantum efficiency; Reverse bias; Sputtering; Biasing; Photoconductivity; Dark current; Thin film; Photodetector; Voltage; Nanotechnology; Physics","score_opus":0.01851548927770467,"score_gpt":0.2833630840826942,"score_spread":0.26484759480498954,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2567923325","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.997293,0.000035634563,0.0018796014,0.00009324197,0.00015603707,0.000110663525,0.00006145634,0.000020663643,0.0003497224],"genre_scores_gemma":[0.9995391,0.000015330026,0.00003502366,0.000048967708,0.000020692996,0.000017977698,0.00000678522,0.0000136223525,0.00030251173],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9992566,0.000040692976,0.00017509505,0.00024139635,0.00010634159,0.00017986505],"domain_scores_gemma":[0.99926347,0.000054437933,0.0001834458,0.00037577204,0.0000703149,0.00005258191],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00007881994,0.00015432376,0.00028181117,0.00019319927,0.00030856405,0.000116608426,0.00014576362,0.00003089258,0.0006978359],"category_scores_gemma":[0.000001156118,0.00012248487,0.00009064298,0.00016420212,0.00010532436,0.00024080566,0.0000011026771,0.00010110705,0.0000070910273],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00091158657,0.00031771546,0.016651047,0.000015536343,0.0029648726,5.7593974e-7,0.0002624557,0.0014450495,0.97475684,0.00008928509,0.00008263815,0.0025023955],"study_design_scores_gemma":[0.00048448562,0.0005549579,0.019523824,0.00002721523,0.0009609893,7.4728655e-7,0.00012610562,0.0009609954,0.97624797,0.000022303351,0.00089820946,0.00019218026],"about_ca_topic_score_codex":0.001259715,"about_ca_topic_score_gemma":0.0004229842,"teacher_disagreement_score":0.0028727772,"about_ca_system_score_codex":0.000012246583,"about_ca_system_score_gemma":0.000033406002,"threshold_uncertainty_score":0.76408136},"labels":[],"label_agreement":null},{"id":"W2588641186","doi":"10.1109/ted.2017.2655520","title":"Impact of Short-Wavelength and Long-Wavelength Line-Edge Roughness on the Variability of Ultrascaled FinFETs","year":2017,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":6,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Alberta","funders":"Natural Sciences and Engineering Research Council of Canada; Alberta Innovates - Technology Futures; International Business Machines Corporation","keywords":"Surface finish; Wavelength; Amplitude; Saturation (graph theory); Physics; Threshold voltage; Voltage; Enhanced Data Rates for GSM Evolution; Optoelectronics; Surface roughness; Line (geometry); Materials science; Computational physics; Condensed matter physics; Optics; Computer science; Telecommunications; Quantum mechanics; Transistor; Mathematics","score_opus":0.026831860724177994,"score_gpt":0.2879568110637094,"score_spread":0.2611249503395314,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2588641186","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9593515,0.00011729422,0.039013065,0.000023253748,0.0002287912,0.00035927922,0.00007456053,0.00006316849,0.00076907995],"genre_scores_gemma":[0.99935156,0.00043301794,0.000045822882,0.000014423787,0.000043332133,0.00002527639,0.0000026792045,0.0000387621,0.00004509777],"study_design_codex":"design_other","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9986271,0.00007197966,0.00041042757,0.00029518167,0.0002432971,0.00035196022],"domain_scores_gemma":[0.99845564,0.00041467205,0.00014706167,0.00081682985,0.00009021299,0.00007557849],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00033673795,0.00029841243,0.00039455926,0.000081855454,0.00024846327,0.000045185974,0.00039630485,0.0001287272,0.000102970516],"category_scores_gemma":[0.000018545426,0.00021798436,0.00017463525,0.00011692177,0.00016411583,0.00029430116,0.0000016342532,0.0003949463,0.0000033443755],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0008475043,0.0027839714,0.030261578,0.0018135757,0.0044711307,0.000014931204,0.0031587812,0.16673544,0.2794416,0.0015570937,0.00015149948,0.5087629],"study_design_scores_gemma":[0.0016081398,0.0020632674,0.1362032,0.0004368556,0.00048342458,0.000028949165,0.00016415493,0.049913224,0.8069622,0.0008691077,0.0001523823,0.0011150722],"about_ca_topic_score_codex":0.0000489994,"about_ca_topic_score_gemma":0.00011924768,"teacher_disagreement_score":0.52752066,"about_ca_system_score_codex":0.00009502162,"about_ca_system_score_gemma":0.000044329616,"threshold_uncertainty_score":0.8889144},"labels":[],"label_agreement":null},{"id":"W2597266713","doi":"10.1109/ted.2017.2677201","title":"The Effect of Pinned Photodiode Shape on Time-of-Flight Demodulation Contrast","year":2017,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Advanced Optical Sensing Technologies","field":"Physics and Astronomy","cited_by":26,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Toronto","funders":"Natural Sciences and Engineering Research Council of Canada; Defense Advanced Research Projects Agency","keywords":"Demodulation; Square (algebra); Photodiode; Sorting; Optics; Time of flight; Optical transfer function; Contrast (vision); Benchmark (surveying); Physics; Computer science; Mathematics; Geometry; Algorithm; Telecommunications","score_opus":0.006330946174099419,"score_gpt":0.25940994203298834,"score_spread":0.25307899585888893,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2597266713","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.94698256,0.000030326579,0.05082269,0.00031787422,0.00010745734,0.00031393423,0.000016464497,0.00006819717,0.0013405059],"genre_scores_gemma":[0.9996054,0.0000066673474,0.00021119288,0.000006738331,0.000025216477,0.000020179354,0.0000018107722,0.000014958958,0.00010783503],"study_design_codex":"design_other","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99916714,0.000046549852,0.00020801045,0.00018552307,0.00015499844,0.0002377612],"domain_scores_gemma":[0.9987205,0.00046297428,0.00024796417,0.00049578474,0.000047482667,0.000025286097],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00012182294,0.00015745795,0.00023839752,0.000048284015,0.0005087479,0.00003918258,0.00030125323,0.000057978894,0.000032999575],"category_scores_gemma":[0.000010966812,0.00010666615,0.00012026945,0.00006881111,0.00019627342,0.0001183897,0.0000016946608,0.00022084845,0.00002349328],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0015668012,0.0003473677,0.0026636922,0.000047775786,0.00063931546,0.0000010593765,0.000076167256,0.0128494855,0.29908058,0.005382906,0.00005855606,0.6772863],"study_design_scores_gemma":[0.00048653432,0.0007785768,0.0014292258,0.000049339225,0.00006029308,2.800134e-7,0.000007958044,0.008535592,0.98740005,0.00097211695,0.00017130582,0.00010872371],"about_ca_topic_score_codex":0.000039499333,"about_ca_topic_score_gemma":0.00002270776,"teacher_disagreement_score":0.6883195,"about_ca_system_score_codex":0.000024041874,"about_ca_system_score_gemma":0.000013985865,"threshold_uncertainty_score":0.43497193},"labels":[],"label_agreement":null},{"id":"W2602688410","doi":"10.1109/ted.2017.2679727","title":"GaN Nanowire Schottky Barrier Diodes","year":2017,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":23,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"","funders":"Division of Electrical, Communications and Cyber Systems; Queen's University; Queen's University Belfast; National Science Foundation","keywords":"Materials science; Optoelectronics; Schottky diode; Nanowire; Diode; Breakdown voltage; Gallium nitride; Schottky barrier; Transistor; Power semiconductor device; Epitaxy; Fabrication; Wide-bandgap semiconductor; Voltage; Nanotechnology; Electrical engineering; Layer (electronics)","score_opus":0.014329451427018296,"score_gpt":0.26767094331724284,"score_spread":0.25334149189022453,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2602688410","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9815252,0.000073447,0.009895245,0.00028522,0.0008800497,0.0002429681,0.00012378709,0.0000961021,0.0068779862],"genre_scores_gemma":[0.9969945,0.0000144688365,0.00008601248,0.00013973609,0.00027914424,0.00006897749,0.000009550611,0.000039881284,0.0023677514],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9986574,0.00004837058,0.0002483041,0.0003836683,0.00018936585,0.00047290372],"domain_scores_gemma":[0.9988682,0.000039711595,0.000198993,0.00068594894,0.000064557025,0.00014258309],"candidate_categories":["metaepi_narrow","insufficient_payload"],"consensus_categories":[],"category_scores_codex":[0.0001315614,0.00027396993,0.0002826795,0.00008477512,0.0010843459,0.00043010258,0.0004714597,0.00007313618,0.0018153632],"category_scores_gemma":[0.0000012895644,0.00024685546,0.00018606629,0.000055071818,0.0000832053,0.0005376925,0.0000014236493,0.0002495268,0.00024466938],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00020588652,0.0006487382,0.006829442,0.00011469468,0.00074713025,0.000007949455,0.0004876183,0.0008647216,0.9343747,0.0027148342,0.00087684335,0.05212746],"study_design_scores_gemma":[0.0005588506,0.0001285241,0.0010722324,0.000056789115,0.000099395584,0.000001586918,0.00009834773,0.00011405765,0.98406667,0.00071351795,0.0127221085,0.0003679077],"about_ca_topic_score_codex":0.00066245976,"about_ca_topic_score_gemma":0.00026084096,"teacher_disagreement_score":0.051759552,"about_ca_system_score_codex":0.00003137684,"about_ca_system_score_gemma":0.000087640874,"threshold_uncertainty_score":0.9999984},"labels":[],"label_agreement":null},{"id":"W2615644558","doi":"10.1109/ted.2017.2699969","title":"Assessment of High-Frequency Performance Limit of Black Phosphorus Field-Effect Transistors","year":2017,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"2D Materials and Applications","field":"Materials Science","cited_by":22,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Field-effect transistor; Physics; Limit (mathematics); Transistor; Topology (electrical circuits); Electrical engineering; Quantum mechanics; Voltage; Mathematics; Engineering","score_opus":0.011128325584774371,"score_gpt":0.27813192185156954,"score_spread":0.26700359626679515,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2615644558","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9847147,0.000043655436,0.013149288,0.00019784045,0.00035592544,0.00030452505,0.000046327255,0.000040758034,0.0011470019],"genre_scores_gemma":[0.99858457,0.00020601066,0.0009397145,0.00003000547,0.000028935268,0.0000874922,0.0000018267009,0.000016684724,0.0001047364],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9987931,0.000051264233,0.00037031743,0.00027555446,0.00025018657,0.00025953093],"domain_scores_gemma":[0.99876815,0.00010549762,0.0003415229,0.0006549824,0.000077547025,0.000052271607],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00029123737,0.00017284273,0.00035056972,0.00006860494,0.00032767007,0.000052587788,0.00048994436,0.00009104283,0.00035932517],"category_scores_gemma":[0.0000041519525,0.000150266,0.00010581503,0.00007604937,0.00015160545,0.00027171717,0.0000016807171,0.00012531148,0.000026032276],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00006318543,0.00019454853,0.00042996465,0.00017223731,0.000027647562,4.0006597e-7,0.0000670906,0.0008650148,0.99402994,0.00049457833,0.000017051932,0.0036383418],"study_design_scores_gemma":[0.0003587959,0.0008375605,0.017078392,0.00006800985,0.000084082014,0.0000014348658,0.000008672456,0.00017730745,0.9810758,0.00007487973,0.00009366845,0.00014136688],"about_ca_topic_score_codex":0.0007003771,"about_ca_topic_score_gemma":0.00020591126,"teacher_disagreement_score":0.016648427,"about_ca_system_score_codex":0.000047307552,"about_ca_system_score_gemma":0.000087422166,"threshold_uncertainty_score":0.612767},"labels":[],"label_agreement":null},{"id":"W2749789893","doi":"10.1109/ted.2017.2738838","title":"Strain-Induced Armchair Graphene Nanoribbon Resonant-Tunneling Diodes","year":2017,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Graphene research and applications","field":"Materials Science","cited_by":33,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Concordia University","funders":"","keywords":"Resonant-tunneling diode; Quantum tunnelling; Diode; Materials science; Graphene; Graphene nanoribbons; Non-equilibrium thermodynamics; Condensed matter physics; Strain (injury); Strain engineering; Formalism (music); Optoelectronics; Nanotechnology; Quantum well; Physics; Quantum mechanics; Silicon","score_opus":0.03331875668271493,"score_gpt":0.3110425305180413,"score_spread":0.27772377383532637,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2749789893","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9554601,0.00016649472,0.04147274,0.0011740178,0.0002905215,0.00036909178,0.00009681623,0.00021763204,0.0007526258],"genre_scores_gemma":[0.99849737,0.00018310943,0.00062544947,0.00008391581,0.00010314129,0.0002034614,0.0000043934756,0.00003191647,0.0002672439],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9978396,0.000083924526,0.00028680702,0.0005549646,0.00046847647,0.0007662086],"domain_scores_gemma":[0.99847025,0.00010686766,0.00017385531,0.0009100895,0.00011815538,0.00022081175],"candidate_categories":["sts"],"consensus_categories":[],"category_scores_codex":[0.00042198488,0.00024795617,0.00024200325,0.0001929405,0.0021084046,0.00042770768,0.0008333138,0.00011063893,0.00023873779],"category_scores_gemma":[0.000013337519,0.00022326178,0.0001646643,0.0001951196,0.00016091963,0.00048533935,0.0000035898568,0.00033474967,0.00018967132],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000057147077,0.00020684444,0.000040673942,0.000021120972,0.000023947774,0.0000034058328,0.00007526854,0.00020821024,0.98277575,0.0005862269,0.000041299554,0.015960114],"study_design_scores_gemma":[0.0004589428,0.00025931816,0.0012226811,0.000050457398,0.000029985338,0.000007877535,0.00007802431,0.0005674742,0.99534297,0.0010596942,0.00064595864,0.00027660414],"about_ca_topic_score_codex":0.00042342374,"about_ca_topic_score_gemma":0.0013681276,"teacher_disagreement_score":0.04303731,"about_ca_system_score_codex":0.000060242226,"about_ca_system_score_gemma":0.00012719801,"threshold_uncertainty_score":0.9991907},"labels":[],"label_agreement":null},{"id":"W2752022176","doi":"10.1109/ted.2017.2746006","title":"Design and Fabrication of a High-Power Air-Coupled Capacitive Micromachined Ultrasonic Transducer Array With Concentric Annular Cells","year":2017,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Advanced MEMS and NEMS Technologies","field":"Engineering","cited_by":15,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Natural Sciences and Engineering Research Council of Canada; CMC Microsystems","keywords":"Capacitive micromachined ultrasonic transducers; Ultrasonic sensor; Capacitive sensing; Transducer; Materials science; Acoustics; Surface micromachining; Electrical engineering; Optoelectronics; Optics; Fabrication; Engineering; Physics","score_opus":0.005950127306795173,"score_gpt":0.20891824288952693,"score_spread":0.20296811558273176,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2752022176","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.52076393,0.00023802693,0.47850782,0.000037718084,0.000059407696,0.00021907243,0.000010057882,0.00013976889,0.000024197923],"genre_scores_gemma":[0.99340326,0.00065694423,0.0057890546,0.000012513252,0.000007861272,0.000058704903,0.000001335457,0.000034402427,0.000035905396],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99919033,0.000011361213,0.00016734497,0.00023640755,0.0001166798,0.0002778934],"domain_scores_gemma":[0.99939597,0.0000781319,0.00009586322,0.00032344094,0.00006354532,0.000043038803],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000063674364,0.00021338683,0.0002548116,0.00010039731,0.00021372558,0.000026520525,0.0001760703,0.00010873173,0.000014127573],"category_scores_gemma":[0.0000024463143,0.00018315464,0.00003936868,0.00012622382,0.00015507183,0.00029488996,3.2348112e-7,0.00025606772,0.0000030277656],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000089725974,0.00004912005,0.000009328607,0.000037009067,0.00011218331,0.0000016861497,0.00028057338,0.026858948,0.9702514,0.000016287724,0.0000047279277,0.002289049],"study_design_scores_gemma":[0.00068461004,0.00037500475,0.0010119168,0.000050265036,0.000072574665,0.000006779983,0.0000720479,0.0012718932,0.99608916,0.00007496509,0.000075074495,0.00021571461],"about_ca_topic_score_codex":0.00007189493,"about_ca_topic_score_gemma":0.00009127009,"teacher_disagreement_score":0.47271878,"about_ca_system_score_codex":0.000058386173,"about_ca_system_score_gemma":0.000022580427,"threshold_uncertainty_score":0.746883},"labels":[],"label_agreement":null},{"id":"W2767360510","doi":"10.1109/ted.2017.2766781","title":"Metallic Single Electron Transistors: Impact of Parasitic Capacitances on Small Circuits","year":2017,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Quantum and electron transport phenomena","field":"Physics and Astronomy","cited_by":4,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Canadian Institute for Advanced Research; Institut interdisciplinaire d'innovation technologique; Université de Sherbrooke","funders":"Natural Sciences and Engineering Research Council of Canada; Fonds Québécois de la Recherche sur la Nature et les Technologies; CMC Microsystems","keywords":"Coulomb blockade; Fabrication; Electronic circuit; Capacitance; Transistor; Monte Carlo method; Materials science; Parasitic capacitance; Computational physics; Electronic engineering; Optoelectronics; Physics; Electrical engineering; Voltage; Engineering; Mathematics; Electrode; Quantum mechanics","score_opus":0.02477073786193845,"score_gpt":0.27278294219720317,"score_spread":0.24801220433526472,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2767360510","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.97707516,0.00023308714,0.015813805,0.00009718243,0.00018444643,0.00034229865,0.000094292154,0.00007596945,0.006083745],"genre_scores_gemma":[0.99924827,0.000031757747,0.000026284339,0.000032626845,0.00012307694,0.00007557246,0.000017747992,0.00006287062,0.00038179554],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.997626,0.0000857134,0.00048241683,0.00056538143,0.00032471213,0.00091578567],"domain_scores_gemma":[0.9984694,0.000107385385,0.0003824538,0.0007671735,0.00009136048,0.00018220565],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.00018997493,0.00049881684,0.0006236056,0.00023139041,0.00067393464,0.00012097343,0.0005865367,0.0001081785,0.00040956598],"category_scores_gemma":[0.0000013242876,0.00044707133,0.0006617193,0.00019148391,0.0001733373,0.00039431162,3.8440396e-7,0.0005741542,0.00005262168],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0014087759,0.009120719,0.008240441,0.00031467824,0.0058086324,0.000014704784,0.0022959555,0.009913057,0.8750165,0.015967654,0.00013462127,0.07176423],"study_design_scores_gemma":[0.0013617838,0.0045321626,0.008291669,0.00012790716,0.00047635,0.000003761491,0.00007330654,0.00013201543,0.9801871,0.003729635,0.00031266618,0.00077163364],"about_ca_topic_score_codex":0.001002786,"about_ca_topic_score_gemma":0.00074805797,"teacher_disagreement_score":0.10517058,"about_ca_system_score_codex":0.00018938586,"about_ca_system_score_gemma":0.00019976174,"threshold_uncertainty_score":0.9997981},"labels":[],"label_agreement":null},{"id":"W2767849965","doi":"10.1109/ted.2017.2766782","title":"Channel Material Dependence of Wave Function Deformation Scattering in Ultrascaled FinFETs","year":2017,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Alberta","funders":"Natural Sciences and Engineering Research Council of Canada; Alberta Innovates - Technology Futures; International Business Machines Corporation","keywords":"Scattering; Channel (broadcasting); Coupling (piping); Materials science; Deformation (meteorology); Effective mass (spring–mass system); Surface finish; Enhanced Data Rates for GSM Evolution; Condensed matter physics; Function (biology); Mechanics; Physics; Optics; Composite material; Classical mechanics; Telecommunications","score_opus":0.018823751525771017,"score_gpt":0.23864996405327854,"score_spread":0.21982621252750753,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2767849965","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.82267404,0.000059284102,0.17559768,0.000011801741,0.0008887443,0.00019120968,0.000016649245,0.00008781595,0.00047280217],"genre_scores_gemma":[0.99962765,0.0001389165,0.00005687758,0.000019270987,0.00004580733,0.000049454295,0.00000508165,0.000024655517,0.000032302603],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.999059,0.000017438786,0.00031066543,0.00017018335,0.00016378798,0.0002788808],"domain_scores_gemma":[0.99949485,0.00002239892,0.000115076946,0.00030230844,0.00002909024,0.000036284055],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00011545135,0.00016778684,0.0001886505,0.00014328134,0.00015647424,0.00005873991,0.00018386981,0.00009080956,0.00008676152],"category_scores_gemma":[0.0000017030782,0.00017578306,0.000050904582,0.00007475618,0.000034014927,0.0008237933,7.4644316e-7,0.00017895279,0.000014767526],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00017875526,0.00014329155,0.00023512318,0.00042884666,0.0001347547,0.000005006788,0.00058115623,0.2349003,0.7047703,0.000050431696,0.0000140662105,0.05855796],"study_design_scores_gemma":[0.000591104,0.00015904622,0.0043243724,0.00016444264,0.000041253887,0.000012446881,0.00009682583,0.028637836,0.9653352,0.00024718602,0.00009669562,0.00029362814],"about_ca_topic_score_codex":0.00005576102,"about_ca_topic_score_gemma":0.0004088441,"teacher_disagreement_score":0.26056483,"about_ca_system_score_codex":0.000099923585,"about_ca_system_score_gemma":0.000012267819,"threshold_uncertainty_score":0.7168225},"labels":[],"label_agreement":null},{"id":"W2782074853","doi":"10.1109/ted.2017.2782769","title":"Nanocrystalline Silicon Lateral MSM Photodetector for Infrared Sensing Applications","year":2018,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":11,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Photodetector; Silicon; Materials science; Optoelectronics; Infrared; Nanocrystalline material; Remote sensing; Optics; Nanotechnology; Physics; Geology","score_opus":0.009210032121405276,"score_gpt":0.22807411762432306,"score_spread":0.21886408550291778,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2782074853","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.3021526,0.00022039474,0.693545,0.00009658255,0.0003460511,0.00076594594,0.00008365878,0.0024278304,0.00036195485],"genre_scores_gemma":[0.99374807,0.000049223796,0.0053527127,0.000082338396,0.000115203286,0.00025596292,0.000008396004,0.00008028423,0.00030780566],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99878764,0.000014288394,0.00028193407,0.0003119038,0.00013333607,0.00047088682],"domain_scores_gemma":[0.9993371,0.00008685152,0.00004016613,0.0003833781,0.00009246026,0.000060088423],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.00007057978,0.0002671372,0.00022800185,0.00025322646,0.00026112935,0.000051844963,0.00021827103,0.00019604027,0.000038838996],"category_scores_gemma":[0.0000023225768,0.0002851069,0.00012564432,0.0003677187,0.00010119253,0.00019003259,6.127796e-7,0.00028073337,0.00004775634],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000075489545,0.00006778541,0.0000041197195,0.00015740728,0.00017686756,9.397136e-7,0.0002573206,0.0067021134,0.95253724,0.00004585392,0.00027291744,0.039701927],"study_design_scores_gemma":[0.00042337415,0.0002430041,0.000033883596,0.000029742941,0.0000646676,0.000009228083,0.00003245359,0.022838717,0.9465776,0.00029925237,0.02911694,0.00033114981],"about_ca_topic_score_codex":0.0000168189,"about_ca_topic_score_gemma":0.0005868094,"teacher_disagreement_score":0.6915955,"about_ca_system_score_codex":0.00016899667,"about_ca_system_score_gemma":0.000026978669,"threshold_uncertainty_score":0.9999601},"labels":[],"label_agreement":null},{"id":"W2791257689","doi":"10.1109/ted.2018.2807409","title":"Variability Study for Low-Voltage Microelectromechanical Relay Operation","year":2018,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":7,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"National Science Foundation","keywords":"Relay; Voltage; Solid-state relay; Electrical engineering; Digital protective relay; Materials science; Microelectromechanical systems; Dropout voltage; Power (physics); Electronic engineering; Voltage regulator; Engineering; Protective relay; Optoelectronics; Physics","score_opus":0.013682032259977998,"score_gpt":0.2651499676928235,"score_spread":0.2514679354328455,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2791257689","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.37208533,0.000039733604,0.6260758,0.000009655139,0.00055972463,0.0007851891,0.000015716472,0.00025794885,0.00017090497],"genre_scores_gemma":[0.9984988,0.000025237274,0.00056462653,0.00011730073,0.00019316065,0.00034264094,0.0000062126587,0.000061025134,0.00019097891],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9984875,0.000059533017,0.0003601959,0.00043004702,0.00018529827,0.00047744223],"domain_scores_gemma":[0.9992784,0.00013447268,0.000041619773,0.00037174096,0.00009552138,0.00007820355],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.00036284377,0.00026186873,0.00024730392,0.000102721744,0.00028462935,0.00006394073,0.00023168419,0.000115580515,0.00021472367],"category_scores_gemma":[0.0000044570806,0.0002619856,0.00009211672,0.00024815777,0.000036731417,0.00030948265,6.054214e-7,0.00028060796,0.000065757515],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00020418005,0.0013254574,0.000067624576,0.00014155022,0.00046572607,0.0000019631896,0.00088796543,0.02004814,0.94966894,0.0003470208,0.00029431534,0.026547136],"study_design_scores_gemma":[0.0016115045,0.0033887073,0.0000838967,0.00003277139,0.0001946071,0.000008701919,0.00022580879,0.04789141,0.94060725,0.0005091397,0.0047849673,0.00066123257],"about_ca_topic_score_codex":0.000008643968,"about_ca_topic_score_gemma":0.00020640473,"teacher_disagreement_score":0.62641346,"about_ca_system_score_codex":0.0002191625,"about_ca_system_score_gemma":0.000034836936,"threshold_uncertainty_score":0.99998325},"labels":[],"label_agreement":null},{"id":"W2796256597","doi":"10.1109/ted.2018.2817509","title":"An Improved Nonlocal History-Dependent Model for Gain and Noise in Avalanche Photodiodes Based on Energy Balance Equation","year":2018,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Semiconductor Quantum Structures and Devices","field":"Physics and Astronomy","cited_by":18,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Saskatchewan","funders":"Conselho Nacional de Desenvolvimento Científico e Tecnológico; Ministero dell’Istruzione, dell’Università e della Ricerca","keywords":"Avalanche photodiode; APDS; Impact ionization; Noise (video); Physics; Ionization; Computational physics; Optoelectronics; Classification of discontinuities; Diode; Computer science; Optics; Mathematics; Quantum mechanics; Detector; Mathematical analysis; Ion; Artificial intelligence","score_opus":0.018004643935889023,"score_gpt":0.25775592628466193,"score_spread":0.2397512823487729,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2796256597","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.3472324,0.000069866684,0.65198165,0.000045204437,0.00017099683,0.00021414613,0.000054899574,0.000037576698,0.00019326666],"genre_scores_gemma":[0.99840146,0.000005864981,0.00067084725,0.00043890718,0.00016044623,0.00016267101,0.000027817428,0.000030940988,0.000101053025],"study_design_codex":"bench_or_experimental","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9987616,0.000052788255,0.00023514754,0.00045497745,0.00014834269,0.00034713285],"domain_scores_gemma":[0.9993924,0.00009668653,0.00010634964,0.00025187543,0.00006345405,0.00008926529],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00013234315,0.00023846602,0.00022134915,0.00016059476,0.00013589446,0.000042076506,0.00014050827,0.00008150063,0.000099639954],"category_scores_gemma":[8.958004e-7,0.0002233844,0.00007377445,0.00008749084,0.000060029823,0.00021840712,5.936333e-7,0.00016780423,0.000002253161],"study_design_candidate":"simulation_or_modeling","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0028993944,0.0016861608,0.0015204474,0.0001335985,0.00018939277,0.0000013644269,0.0016806151,0.22448176,0.70285743,0.005988509,0.0002712793,0.058290035],"study_design_scores_gemma":[0.0009169291,0.0005165746,0.00006726734,0.000020315554,0.000026965918,2.907701e-7,0.000055692133,0.83957237,0.15782985,0.0006383135,0.00013892808,0.0002165129],"about_ca_topic_score_codex":0.00065521424,"about_ca_topic_score_gemma":0.0010159184,"teacher_disagreement_score":0.6513108,"about_ca_system_score_codex":0.00014583711,"about_ca_system_score_gemma":0.00012370378,"threshold_uncertainty_score":0.91093516},"labels":[],"label_agreement":null},{"id":"W2800538507","doi":"10.1109/ted.2018.2827169","title":"Improved Circuit Model Fitting of Inkjet-Printed OTFTs and a Proposal for Standardized Parameter Reporting","year":2018,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Organic Electronics and Photovoltaics","field":"Engineering","cited_by":5,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"National Research Council Canada","funders":"National Research Council Canada","keywords":"Computer science; Metric (unit); Standardization; Thin-film transistor; Transistor; Electronic engineering; Electronic circuit; Materials science; Electrical engineering; Engineering; Nanotechnology; Voltage","score_opus":0.01653358929732432,"score_gpt":0.25657091491490935,"score_spread":0.24003732561758503,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2800538507","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.53117615,0.00009985247,0.46798918,0.000027010246,0.00009028208,0.00035916705,0.000023206368,0.00013819191,0.000096959506],"genre_scores_gemma":[0.99576724,0.000045499484,0.003929962,0.000029203298,0.000041338462,0.000065115375,0.000002382845,0.000057639838,0.000061623636],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9985641,0.000015591633,0.00061333214,0.00025794122,0.00013156708,0.00041743528],"domain_scores_gemma":[0.999239,0.000110039706,0.00023260727,0.00020656096,0.00014878098,0.00006299072],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00038104464,0.0001944965,0.0003047481,0.00011110132,0.00014107004,0.000036794896,0.000096498086,0.00011558583,0.0000130767685],"category_scores_gemma":[0.000028872144,0.0001925011,0.00009748146,0.00018712532,0.000050257502,0.00011925243,0.0000010392266,0.00026341274,6.728127e-7],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00012024047,0.00004636699,0.000018865014,0.00022287252,0.0002064757,4.3447787e-7,0.00045663383,0.005295418,0.98521817,0.00015644934,0.000020645644,0.008237401],"study_design_scores_gemma":[0.00037441312,0.00033501157,0.000005923834,0.000031155916,0.000053608645,0.000006239512,0.00001784303,0.3657945,0.6322196,0.00096675486,0.000058867245,0.0001360394],"about_ca_topic_score_codex":0.000021255682,"about_ca_topic_score_gemma":0.0003826431,"teacher_disagreement_score":0.46459106,"about_ca_system_score_codex":0.000091260066,"about_ca_system_score_gemma":0.00015707134,"threshold_uncertainty_score":0.7849967},"labels":[],"label_agreement":null},{"id":"W2808897403","doi":"10.1109/ted.2018.2844741","title":"Intrinsic Performance of Germanane Schottky Barrier Field-Effect Transistors","year":2018,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Graphene research and applications","field":"Materials Science","cited_by":5,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Natural Sciences and Engineering Research Council of Canada; University of Waterloo; Compute Canada","keywords":"Schottky barrier; Materials science; Ohmic contact; Field-effect transistor; Optoelectronics; Schottky diode; Transistor; Band gap; Germanium; Semiconductor; Leakage (economics); Condensed matter physics; Silicon; Electrical engineering; Nanotechnology; Physics; Diode; Voltage","score_opus":0.007958995777360861,"score_gpt":0.265992683840457,"score_spread":0.2580336880630961,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2808897403","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9862022,0.000111962996,0.01222222,0.00018505164,0.00015616817,0.0002680038,0.000014675207,0.00007908612,0.00076065795],"genre_scores_gemma":[0.9992285,0.00010382051,0.00017095599,0.000099733974,0.00006295799,0.00009938525,0.0000012310928,0.000014872802,0.00021853752],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9987121,0.000081492646,0.00023144305,0.00028209278,0.00029646666,0.00039638413],"domain_scores_gemma":[0.9992233,0.00014324495,0.00006505245,0.00033286345,0.00012059388,0.00011494101],"candidate_categories":["insufficient_payload"],"consensus_categories":[],"category_scores_codex":[0.00027817168,0.00014910007,0.00019372173,0.00019480876,0.0003004099,0.000029863377,0.00029247988,0.0000741143,0.001048561],"category_scores_gemma":[0.0000051330558,0.00012745964,0.00009875948,0.00044133907,0.00016837893,0.00022641278,8.97725e-7,0.00020066282,0.00026908942],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00027123376,0.00010877196,0.00014202307,0.000069939844,0.00002663076,5.154493e-7,0.00011047756,0.00006534403,0.9773728,0.00008242783,0.00016766749,0.021582155],"study_design_scores_gemma":[0.0002578998,0.0017023098,0.0006631035,0.000030014306,0.00003080554,0.000004427553,0.0000090729945,0.0002464431,0.9951074,0.000030307963,0.001791913,0.0001262957],"about_ca_topic_score_codex":0.0000960694,"about_ca_topic_score_gemma":0.00030844493,"teacher_disagreement_score":0.021455858,"about_ca_system_score_codex":0.000039079136,"about_ca_system_score_gemma":0.00008333988,"threshold_uncertainty_score":0.99986464},"labels":[],"label_agreement":null},{"id":"W2810086026","doi":"10.1109/ted.2018.2847612","title":"Analysis of the Channel and Contact Regions in Staggered and Drain-Offset ZnO Thin-Film Transistors With Compact Modeling","year":2018,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":8,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Alberta","funders":"Science and Engineering Research Council; Alberta Innovates; CMC Microsystems","keywords":"Thin-film transistor; Materials science; Transistor; Optoelectronics; Offset (computer science); Electrode; Channel (broadcasting); Oxide thin-film transistor; Threshold voltage; Electrical engineering; Voltage; Layer (electronics); Nanotechnology; Computer science; Engineering; Chemistry","score_opus":0.011532535600820255,"score_gpt":0.21462102080347786,"score_spread":0.2030884852026576,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2810086026","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.91568106,0.0005316867,0.082772136,0.0002940538,0.00007394695,0.00023250339,0.0000463018,0.0002471108,0.00012122225],"genre_scores_gemma":[0.9995744,0.00020899327,0.00010644819,0.000035058692,0.0000070818915,0.000016177446,0.0000021839055,0.00003222695,0.000017417817],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9988718,0.000049168073,0.0002861739,0.00028234685,0.00019071373,0.00031979548],"domain_scores_gemma":[0.99942285,0.0000866236,0.000052723055,0.00033762015,0.000048289912,0.00005190278],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00013287166,0.00025019937,0.00041803438,0.0006123692,0.00016784256,0.000027057507,0.00019182227,0.0001377139,0.0000074717573],"category_scores_gemma":[0.0000024683816,0.00019133872,0.000100962236,0.001150404,0.00019139232,0.00018237624,7.2747366e-7,0.00040736265,5.127997e-7],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0001609262,0.00010112925,0.0007878768,0.00010722362,0.0012926724,0.0000022060572,0.004795278,0.9816952,0.010154335,0.00014099246,0.000015464775,0.0007467299],"study_design_scores_gemma":[0.0007638544,0.0003367928,0.0059085605,0.00012856102,0.0008571283,0.000009657435,0.0010876571,0.95636857,0.033996,0.00009592357,0.000079859085,0.0003674312],"about_ca_topic_score_codex":0.00039089093,"about_ca_topic_score_gemma":0.016821947,"teacher_disagreement_score":0.08389337,"about_ca_system_score_codex":0.00010529525,"about_ca_system_score_gemma":0.000029836607,"threshold_uncertainty_score":0.93870413},"labels":[],"label_agreement":null},{"id":"W2810549339","doi":"10.1109/ted.2018.2846219","title":"Modeling the Reverse Gate-Leakage Current in GaN-Channel HFETs: Realistic Assessment of Fowler–Nordheim and Leakage at Mesa Sidewalls","year":2018,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":7,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Concordia University","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Leakage (economics); Quantum tunnelling; Materials science; Optoelectronics; Transistor; Schottky barrier; Heterojunction; Electron; Electric field; Condensed matter physics; Electrical engineering; Voltage; Physics; Engineering","score_opus":0.02342149095536132,"score_gpt":0.30006163033151295,"score_spread":0.2766401393761516,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2810549339","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.97132534,0.0002037818,0.026770476,0.00016937315,0.00040761745,0.00042829156,0.00013271427,0.000030787156,0.000531647],"genre_scores_gemma":[0.9994004,0.00010643568,0.00006012915,0.000066671695,0.00013561825,0.0000733567,0.000017893795,0.00003211212,0.000107385735],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99831945,0.00014807758,0.00048515666,0.00039898526,0.00022250718,0.0004258221],"domain_scores_gemma":[0.9991766,0.00012084571,0.00017703009,0.00034535408,0.00009863876,0.00008153967],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00035248746,0.0002769911,0.0003628233,0.00013785089,0.0002503418,0.000058134512,0.00021295149,0.00005892679,0.0002928312],"category_scores_gemma":[0.0000015277836,0.0002172832,0.00010867002,0.00021259945,0.0000993288,0.00018908932,0.000004408326,0.00027741265,0.0000132653695],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00086116156,0.0028819023,0.0030079675,0.0012510024,0.0012039182,0.000010754762,0.007653136,0.20499721,0.7475556,0.005391846,0.0008857801,0.024299713],"study_design_scores_gemma":[0.0041715885,0.0014551772,0.0016622704,0.0011106192,0.0008615811,0.000010810466,0.003140637,0.26984063,0.7085368,0.0045688674,0.0029620684,0.0016789756],"about_ca_topic_score_codex":0.0018744562,"about_ca_topic_score_gemma":0.0024283007,"teacher_disagreement_score":0.06484341,"about_ca_system_score_codex":0.00009182585,"about_ca_system_score_gemma":0.000094135525,"threshold_uncertainty_score":0.8860552},"labels":[],"label_agreement":null},{"id":"W2831289900","doi":"10.1109/ted.2018.2849706","title":"Wireless &lt;italic&gt;LC&lt;/italic&gt;-Type Passive Humidity Sensor Using Large-Area RF Magnetron Sputtered ZnO Films","year":2018,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Gas Sensing Nanomaterials and Sensors","field":"Engineering","cited_by":19,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Natural Sciences and Engineering Research Council of Canada; University of Waterloo","keywords":"Materials science; Optoelectronics; Humidity; Capacitor; Calibration; Electromagnetic coil; Relative humidity; Electrical engineering; Fabrication; Resonator; Voltage; Physics; Engineering","score_opus":0.015420514419940598,"score_gpt":0.23114364975917376,"score_spread":0.21572313533923315,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2831289900","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9812005,0.00019038522,0.013961115,0.000088543275,0.002574663,0.00042327723,0.00019437452,0.0008288419,0.00053826784],"genre_scores_gemma":[0.9977448,0.00013539624,0.00090044894,0.00015067773,0.0003960855,0.000013782086,0.000030736825,0.0001761706,0.0004519186],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99686253,0.00012943505,0.00062983495,0.00067581364,0.0004584668,0.0012439194],"domain_scores_gemma":[0.998632,0.000102702776,0.00015771821,0.0006273247,0.0002491318,0.00023110578],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.00019022186,0.00067246164,0.0006575636,0.00035245132,0.00056548405,0.00024185036,0.0002922245,0.00037574893,0.0005773028],"category_scores_gemma":[0.000007730439,0.0006848863,0.00022741978,0.0006455374,0.00013997813,0.0004260776,0.0000040491586,0.00037981922,0.000248484],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00013723761,0.00016412315,0.000022274304,0.00011584629,0.0002288842,0.000033027078,0.0003518839,0.014799627,0.9822456,0.000024921712,0.00070333085,0.0011732471],"study_design_scores_gemma":[0.00091558596,0.0007483632,0.00070029165,0.00014295423,0.0002550179,0.00011080178,0.00012678088,0.092799224,0.8976687,0.000021282287,0.005542167,0.00096881756],"about_ca_topic_score_codex":0.0001230925,"about_ca_topic_score_gemma":0.0012798901,"teacher_disagreement_score":0.08457688,"about_ca_system_score_codex":0.00028450595,"about_ca_system_score_gemma":0.00006996424,"threshold_uncertainty_score":0.99956024},"labels":[],"label_agreement":null},{"id":"W2890220309","doi":"10.1109/ted.2018.2866598","title":"ZnO Schottky Nanodiodes Processed From Plasma-Enhanced Atomic Layer Deposition at Near Room Temperature","year":2018,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"ZnO doping and properties","field":"Materials Science","cited_by":4,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Alberta","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Schottky diode; Ohmic contact; Schottky barrier; Materials science; Diode; Analytical Chemistry (journal); Atomic layer deposition; Metal–semiconductor junction; Optoelectronics; Breakdown voltage; Electrode; Layer (electronics); Nanotechnology; Chemistry; Electrical engineering; Voltage; Physical chemistry; Organic chemistry","score_opus":0.011570550089029507,"score_gpt":0.23763820854541948,"score_spread":0.22606765845638996,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2890220309","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99264914,0.0003711036,0.0050072162,0.0002717187,0.0007102144,0.00024489829,0.000051113144,0.0003814524,0.00031312025],"genre_scores_gemma":[0.99731904,0.00006238061,0.0009331576,0.00038288534,0.00021837415,0.000089848065,0.000013801606,0.000042556985,0.0009379572],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99816847,0.0001278923,0.00028800464,0.00057890185,0.00033474242,0.00050199975],"domain_scores_gemma":[0.99921423,0.00007528134,0.00011585007,0.0003343469,0.00015818652,0.000102083824],"candidate_categories":["insufficient_payload"],"consensus_categories":[],"category_scores_codex":[0.00014100375,0.0002943771,0.0002671548,0.0000865802,0.0010755609,0.0004226814,0.00030075802,0.00020941523,0.0007817071],"category_scores_gemma":[0.000005103518,0.00024389273,0.00008755084,0.00026530307,0.00014219977,0.0006607366,0.0000023260725,0.0002764028,0.0014888012],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0005739146,0.00008363009,0.000015575804,0.00003712325,0.00003367321,0.0000014014324,0.00070360524,0.0016930585,0.99611473,0.0000034833472,0.00016541958,0.0005743934],"study_design_scores_gemma":[0.00049804617,0.00043101385,0.00010677832,0.00014847383,0.000059289694,0.000009952739,0.000067863795,0.0031016045,0.9943781,0.00005161716,0.00082554604,0.00032173222],"about_ca_topic_score_codex":0.00033004011,"about_ca_topic_score_gemma":0.002603426,"teacher_disagreement_score":0.0046698754,"about_ca_system_score_codex":0.00017554557,"about_ca_system_score_gemma":0.00015107606,"threshold_uncertainty_score":0.9992887},"labels":[],"label_agreement":null},{"id":"W2890419265","doi":"10.1109/ted.2018.2869024","title":"Theoretical Evaluation of the Effects of Isolation-Feature Size and Geometry on the Built-In Strain and 2-D Electron Gas Density of AlGaN/GaN Heterostructures","year":2018,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":7,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Concordia University","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Materials science; Heterojunction; Wurtzite crystal structure; Energy minimization; Optoelectronics; Gallium nitride; Transistor; Voltage; Nanotechnology; Electrical engineering; Chemistry; Engineering; Computational chemistry","score_opus":0.0063150772035207164,"score_gpt":0.2560989607197381,"score_spread":0.2497838835162174,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2890419265","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99878746,0.000090790025,0.0002545845,0.00017312204,0.00011695113,0.0004606183,0.000039102357,0.0000051140037,0.00007223418],"genre_scores_gemma":[0.9998357,0.0000104400015,0.00002250133,0.00005579958,0.000040979892,0.000015064418,0.0000022588508,0.000011635468,0.0000055988944],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99884105,0.00028455805,0.0002256514,0.00020059448,0.00026373973,0.00018438908],"domain_scores_gemma":[0.99889,0.0005344297,0.00019212159,0.00023732446,0.00011934469,0.000026802514],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00040699172,0.00015669223,0.00023666985,0.00006851494,0.00009944157,0.000018122792,0.00012500353,0.000072007795,0.00010870751],"category_scores_gemma":[0.00001856324,0.00009674143,0.00006809099,0.00019550712,0.0002692239,0.00006277639,0.0000020440973,0.00019488324,2.9619656e-7],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000119612174,0.0000887882,0.0024693492,0.00008063851,0.000090241316,3.68826e-8,0.0003587961,0.00008362501,0.9892973,0.005013944,0.000005003112,0.0023927044],"study_design_scores_gemma":[0.0004976543,0.0004640877,0.043629266,0.00009359489,0.000150752,8.5483043e-7,0.000083991436,0.00042789217,0.94712025,0.0074455966,0.0000031292027,0.00008290769],"about_ca_topic_score_codex":0.00012433807,"about_ca_topic_score_gemma":0.00019360874,"teacher_disagreement_score":0.042176988,"about_ca_system_score_codex":0.000018882709,"about_ca_system_score_gemma":0.000055341716,"threshold_uncertainty_score":0.3945001},"labels":[],"label_agreement":null},{"id":"W2892463365","doi":"10.1109/ted.2018.2867909","title":"Guest Editorial Special Issue on 2-D Materials for Electronic, Optoelectronic, and Sensor Devices","year":2018,"lang":"en","type":"editorial","venue":"IEEE Transactions on Electron Devices","topic":"Semiconductor materials and devices","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Miniaturization; CMOS; Silicon; Electronics; Transistor; Moore's law; Engineering physics; Semiconductor; Nanotechnology; Electrical engineering; Semiconductor device; Scaling; Materials science; Engineering; Optoelectronics; Computer science","score_opus":0.005890776025535866,"score_gpt":0.24357966286962301,"score_spread":0.23768888684408715,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2892463365","genre_codex":"editorial","genre_gemma":"editorial","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"editorial","genre_consensus":"editorial","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.014610402,0.00076675287,0.00025427344,0.000059796967,0.98009276,0.001313589,0.001621826,0.0007541165,0.00052646454],"genre_scores_gemma":[0.017262755,0.0020699727,0.00006445072,0.000076015516,0.97862494,0.00052222196,0.00034295642,0.00042571922,0.0006109871],"study_design_codex":"not_applicable","study_design_gemma":"not_applicable","domain_scores_codex":[0.9943946,0.00015454587,0.0010147851,0.0013167908,0.0012392204,0.0018800544],"domain_scores_gemma":[0.9971839,0.0010359958,0.00033763837,0.0006898524,0.000507073,0.00024552384],"candidate_categories":["metaepi_narrow","research_integrity"],"consensus_categories":["metaepi_narrow"],"category_scores_codex":[0.0007880197,0.0013826255,0.0014608739,0.0005200033,0.00048237893,0.0006861832,0.00065971445,0.0019949612,0.0006194126],"category_scores_gemma":[0.000053396634,0.001366526,0.00027702696,0.00027104808,0.00014360786,0.00045084074,0.0000046850587,0.0013468647,0.00033658298],"study_design_candidate":"not_applicable","study_design_consensus":"not_applicable","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0009072468,0.000111223315,1.2786802e-7,0.0007217298,0.000556984,0.000001955973,0.000098780794,0.00020860734,0.033094384,0.000015921336,0.9637486,0.00053446443],"study_design_scores_gemma":[0.0009982932,0.0016362753,5.116255e-7,0.00019175958,0.00033507062,0.0000044690028,0.000023397492,0.000042006537,0.2949551,0.00005978368,0.70079195,0.0009613602],"about_ca_topic_score_codex":0.000112273454,"about_ca_topic_score_gemma":0.0014554274,"teacher_disagreement_score":0.26295662,"about_ca_system_score_codex":0.00081756123,"about_ca_system_score_gemma":0.0004661661,"threshold_uncertainty_score":0.9998924},"labels":[],"label_agreement":null},{"id":"W2921123423","doi":"10.1109/ted.2005.852545","title":"Characterization of an Amorphous&lt;tex&gt;$hbox Ge_xhbox Si_1-xhbox O_y$&lt;/tex&gt;Microbolometer for Thermal Imaging Applications","year":2005,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Thermal Radiation and Cooling Technologies","field":"Engineering","cited_by":19,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Carleton University","funders":"","keywords":"Microbolometer; Materials science; Responsivity; Bolometer; Optoelectronics; Bulk micromachining; Resistor; Fabrication; Surface micromachining; Nichrome; Thermal conductivity; CMOS; Silicon; Analytical Chemistry (journal); Electrical engineering; Optics; Detector; Physics; Chemistry; Photodetector","score_opus":0.005670267212204196,"score_gpt":0.21460574541907282,"score_spread":0.2089354782068686,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2921123423","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.53335977,0.00024689265,0.46405414,0.000287108,0.00013208094,0.0005756025,0.00012072027,0.0010669188,0.000156806],"genre_scores_gemma":[0.9953146,0.00020236216,0.0032911145,0.0001816612,0.00014175675,0.00053652073,0.000071855604,0.000099923214,0.00016020001],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9984373,0.00003498556,0.00047125889,0.00036384902,0.00018970357,0.0005029402],"domain_scores_gemma":[0.9991265,0.00007694841,0.00013852768,0.0004664807,0.00010907899,0.00008247879],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.00014428938,0.0003251102,0.0003032545,0.0004182367,0.00022059532,0.00007487826,0.00040188953,0.0001802905,0.000116095835],"category_scores_gemma":[0.0000032334494,0.00034637598,0.00016192962,0.00045648956,0.00007293446,0.00058662373,0.000002012713,0.0002816108,0.000055418062],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00004559139,0.00015167762,0.000011146672,0.000054662025,0.00007638515,3.1047335e-7,0.00016755144,0.061008554,0.8225689,0.0001717939,0.0000310485,0.11571241],"study_design_scores_gemma":[0.0005584861,0.00014031901,0.0006515507,0.000028118428,0.000102096674,0.000010376222,0.000035461835,0.11163657,0.867188,0.000056052177,0.019162504,0.00043050363],"about_ca_topic_score_codex":0.0000063825714,"about_ca_topic_score_gemma":0.00013317492,"teacher_disagreement_score":0.46195486,"about_ca_system_score_codex":0.00015537278,"about_ca_system_score_gemma":0.000039277224,"threshold_uncertainty_score":0.99989885},"labels":[],"label_agreement":null},{"id":"W2921945649","doi":"10.1109/ted.2019.2900743","title":"A New Expression for the Gain-Noise Relation of Single-Carrier Avalanche Photodiodes With Arbitrary Staircase Multiplication Regions","year":2019,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Semiconductor Quantum Structures and Devices","field":"Physics and Astronomy","cited_by":6,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Saskatchewan","funders":"Ministero dell’Istruzione, dell’Università e della Ricerca","keywords":"Avalanche photodiode; Impact ionization; Multiplication (music); Ionization; Noise (video); APDS; Physics; Classification of discontinuities; Avalanche diode; Avalanche breakdown; Single-photon avalanche diode; Multiple exciton generation; Noise figure; Computational physics; Optics; Optoelectronics; Computer science; Mathematics; Voltage; CMOS; Quantum mechanics; Breakdown voltage; Band gap; Mathematical analysis; Detector","score_opus":0.014876462040814307,"score_gpt":0.24428224980476915,"score_spread":0.22940578776395484,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2921945649","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.7026775,0.0002044008,0.29559183,0.00015337135,0.00012317604,0.00081743597,0.00006444799,0.000041831954,0.00032601846],"genre_scores_gemma":[0.9980899,0.000008875322,0.0012035529,0.000066169625,0.00010009317,0.00011086053,0.000026998168,0.000031547228,0.0003619675],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99895114,0.000039904142,0.0002533736,0.0003159496,0.0001929717,0.00024667275],"domain_scores_gemma":[0.99884367,0.00035706794,0.00024271559,0.00040225993,0.000086457534,0.00006782543],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00007852197,0.0002047622,0.00020488113,0.00008561912,0.000205514,0.00004146045,0.00017010291,0.000064246175,0.00020831084],"category_scores_gemma":[0.000001086376,0.00013519173,0.00014521864,0.00020803126,0.000036881105,0.000273932,9.908505e-7,0.00020996878,0.0000058196],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0011544471,0.000305155,0.0037046776,0.00011508422,0.00038443762,2.7488016e-7,0.0014804441,0.016584134,0.9599847,0.0036478268,0.00042273098,0.012216061],"study_design_scores_gemma":[0.0013920763,0.00048361844,0.0014000817,0.00012786027,0.00018994143,0.0000030583963,0.0009090876,0.0040309126,0.9877229,0.0015726298,0.0018921394,0.00027570908],"about_ca_topic_score_codex":0.00023581432,"about_ca_topic_score_gemma":0.00005646348,"teacher_disagreement_score":0.29541245,"about_ca_system_score_codex":0.000030590094,"about_ca_system_score_gemma":0.00010653877,"threshold_uncertainty_score":0.5512959},"labels":[],"label_agreement":null},{"id":"W2927608644","doi":"10.1109/ted.2019.2906943","title":"Scalable Modeling of Transient Self-Heating of GaN High-Electron-Mobility Transistors Based on Experimental Measurements","year":2019,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":18,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Institut interdisciplinaire d'innovation technologique; Université de Sherbrooke","funders":"Natural Sciences and Engineering Research Council of Canada; Centre National de la Recherche Scientifique; Fonds Québécois de la Recherche sur la Nature et les Technologies","keywords":"High-electron-mobility transistor; Transient (computer programming); Materials science; Transistor; Optoelectronics; Thermal resistance; Thermal; Scalability; Electrical impedance; Electronic engineering; Electrical engineering; Computer science; Engineering; Physics","score_opus":0.01707664298044693,"score_gpt":0.25069371637021565,"score_spread":0.23361707338976873,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2927608644","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9870437,0.00005683387,0.010976308,0.000024467066,0.000298131,0.000629897,0.0000694415,0.00005736471,0.00084386],"genre_scores_gemma":[0.999458,0.000001824551,0.0003156954,0.000045406236,0.000029996947,0.00006457649,0.000018127714,0.00004340675,0.00002294612],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9978353,0.0001356395,0.0006205877,0.0004726243,0.0004728926,0.00046299546],"domain_scores_gemma":[0.99911267,0.00006937142,0.00021749435,0.0003888676,0.00012025444,0.00009131779],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.0003161156,0.00032903868,0.00053677475,0.00018142254,0.000117771895,0.00002271197,0.00021320875,0.00008185478,0.0006227741],"category_scores_gemma":[4.5296665e-7,0.0003181411,0.00027404074,0.00024798795,0.000030642976,0.00018091654,5.135312e-7,0.00022237908,0.000011737424],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00027894534,0.0015636815,0.00046383892,0.00015913759,0.00016293045,8.297545e-8,0.00032190687,0.27606803,0.7207386,0.00007077787,0.0000023071004,0.00016976945],"study_design_scores_gemma":[0.0013041,0.0009767042,0.00006417577,0.00013497169,0.00011625831,1.6862151e-7,0.0002407544,0.030923963,0.96592736,0.000026225574,0.000026161479,0.00025913172],"about_ca_topic_score_codex":0.0010080839,"about_ca_topic_score_gemma":0.0000485127,"teacher_disagreement_score":0.2451888,"about_ca_system_score_codex":0.00014168913,"about_ca_system_score_gemma":0.00016659527,"threshold_uncertainty_score":0.99992704},"labels":[],"label_agreement":null},{"id":"W2946201067","doi":"10.1109/ted.2019.2915084","title":"Modeling of Hysteretic Jump Points in Ferroelectric MOS Capacitors","year":2019,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Ferroelectric and Negative Capacitance Devices","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Canada First Research Excellence Fund","keywords":"Hysteresis; Capacitor; Capacitance; Materials science; Energy (signal processing); Ferroelectricity; Condensed matter physics; Topology (electrical circuits); Optoelectronics; Voltage; Electrical engineering; Mathematics; Electronic engineering; Physics; Quantum mechanics; Engineering","score_opus":0.008999651337001716,"score_gpt":0.20988625013782672,"score_spread":0.200886598800825,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2946201067","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9465075,0.0007850274,0.0501583,0.000025616271,0.00036971964,0.00036052978,0.0000085344855,0.00017248014,0.0016122704],"genre_scores_gemma":[0.9993376,0.00024286663,0.000116694355,0.00004693178,0.000023359316,0.000049861952,0.0000020703326,0.000055771794,0.00012480214],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9983372,0.00006206905,0.00045158024,0.00031423243,0.00028184947,0.0005530499],"domain_scores_gemma":[0.999432,0.00011078037,0.00005221886,0.00026974198,0.00006711598,0.000068143054],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.000153845,0.0002961768,0.000417202,0.00061500934,0.00004327417,0.000019035304,0.00022987554,0.0001458261,0.00010020151],"category_scores_gemma":[0.0000031889429,0.0003020777,0.00012648103,0.0011241128,0.000026431702,0.00032311154,4.676e-7,0.00052754435,0.00010380861],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000114176015,0.0001468397,0.00042718108,0.00039500036,0.000142261,0.0000032673115,0.0008389627,0.944836,0.048817903,0.00010543811,0.000020222938,0.0041526984],"study_design_scores_gemma":[0.00058010046,0.00031946672,0.00018007847,0.00015949598,0.000032592547,0.0000064049054,0.00016110096,0.7836844,0.21436165,0.00014600629,0.000031533058,0.00033720979],"about_ca_topic_score_codex":0.00006679002,"about_ca_topic_score_gemma":0.00037129255,"teacher_disagreement_score":0.16554375,"about_ca_system_score_codex":0.00023318254,"about_ca_system_score_gemma":0.00004280167,"threshold_uncertainty_score":0.99994314},"labels":[],"label_agreement":null},{"id":"W2958562926","doi":"10.1109/ted.2019.2924170","title":"Modeling of Ballistic Monolayer Black Phosphorus MOSFETs","year":2019,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"2D Materials and Applications","field":"Materials Science","cited_by":10,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McGill University","funders":"Compute Canada; Natural Sciences and Engineering Research Council of Canada; McGill University","keywords":"Drain-induced barrier lowering; MOSFET; Materials science; Optoelectronics; Ballistic conduction; Transistor; Monolayer; Field-effect transistor; Capacitor; Voltage; Condensed matter physics; Electrical engineering; Nanotechnology; Physics; Engineering; Electron","score_opus":0.01227103010403955,"score_gpt":0.24706846765616816,"score_spread":0.23479743755212862,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2958562926","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9008341,0.000084379266,0.09754653,0.00007950719,0.00025161507,0.00028118343,0.000030902087,0.000086148684,0.0008056352],"genre_scores_gemma":[0.99880826,0.00008088675,0.0006208287,0.00008299796,0.000025402027,0.000049082195,0.0000020504299,0.00002478819,0.00030571676],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99878633,0.00003462638,0.00032350453,0.00032735424,0.00021768567,0.00031048057],"domain_scores_gemma":[0.99937207,0.000047275393,0.00008584749,0.00035758337,0.00007797225,0.000059273912],"candidate_categories":["insufficient_payload"],"consensus_categories":[],"category_scores_codex":[0.00015849191,0.00016229092,0.00024162319,0.00007143459,0.00009227117,0.00004950782,0.0002524393,0.000078536155,0.0009093322],"category_scores_gemma":[0.0000013638389,0.00014895751,0.000077034936,0.00016927981,0.000028676945,0.0001767052,0.0000013749351,0.000107627886,0.0009811083],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000051324492,0.00011689983,0.000005786255,0.00003784334,0.000011397894,2.5697796e-7,0.00008132403,0.19001377,0.8089579,0.0004251904,0.0000112741545,0.0002870841],"study_design_scores_gemma":[0.00024891153,0.00013263755,0.000034833178,0.00003407012,0.000039262806,0.0000025689026,0.000047134192,0.07473744,0.92398834,0.0003149703,0.00024817986,0.00017166958],"about_ca_topic_score_codex":0.00024796688,"about_ca_topic_score_gemma":0.000068954585,"teacher_disagreement_score":0.11527634,"about_ca_system_score_codex":0.000045746692,"about_ca_system_score_gemma":0.00005830451,"threshold_uncertainty_score":0.99979675},"labels":[],"label_agreement":null},{"id":"W2963965558","doi":"10.1109/ted.2019.2926742","title":"Self-Heating and Equivalent Channel Temperature in Short Gate Length GaN HEMTs","year":2019,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":66,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Materials science; Optoelectronics; Transistor; Channel (broadcasting); Wide-bandgap semiconductor; Temperature measurement; Thermal; Field-effect transistor; Logic gate; Gallium nitride; Electronic engineering; Electrical engineering; Voltage; Engineering; Nanotechnology; Layer (electronics); Physics; Thermodynamics","score_opus":0.009235966070179995,"score_gpt":0.2424321410871513,"score_spread":0.23319617501697132,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2963965558","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99776596,0.00014290675,0.00023935163,0.000092339775,0.00033072045,0.00041999624,0.00003071407,0.00006941308,0.00090858946],"genre_scores_gemma":[0.99939555,0.000041098774,0.00005307714,0.00009309,0.000108442946,0.00005459902,0.000013961203,0.000033168846,0.00020698403],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.998686,0.000060725037,0.00026813417,0.00039596343,0.00014839927,0.00044073656],"domain_scores_gemma":[0.999583,0.000049304108,0.000045713805,0.00020478872,0.000032754582,0.000084423016],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00015500763,0.0002535576,0.00029354083,0.00013144925,0.000113838185,0.00009763141,0.00011898058,0.000079318925,0.00020948518],"category_scores_gemma":[2.3125615e-7,0.00023381248,0.00007452083,0.0001761567,0.000014851361,0.0002496986,0.0000012650783,0.0003147793,0.000036148835],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00023764335,0.0012063355,0.01630201,0.0007647197,0.0005578734,0.0000072520215,0.003399696,0.012509011,0.95671463,0.00084872136,0.000059733877,0.007392355],"study_design_scores_gemma":[0.0010817313,0.00040178903,0.0021163241,0.0002008189,0.0000915394,0.000005282619,0.00087880914,0.0026748239,0.9908089,0.00020316799,0.0009250974,0.00061173056],"about_ca_topic_score_codex":0.0002450398,"about_ca_topic_score_gemma":0.00014902421,"teacher_disagreement_score":0.034094237,"about_ca_system_score_codex":0.000045858797,"about_ca_system_score_gemma":0.000050703165,"threshold_uncertainty_score":0.9534596},"labels":[],"label_agreement":null},{"id":"W2970794242","doi":"10.1109/ted.2019.2935690","title":"Characterization of SiPM Avalanche Triggering Probabilities","year":2019,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Radiation Detection and Scintillator Technologies","field":"Physics and Astronomy","cited_by":30,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo; TRIUMF; Queen's University; University of British Columbia","funders":"","keywords":"Silicon photomultiplier; Photon; Cherenkov radiation; Detector; Avalanche photodiode; Photodetector; Scintillation; Photonics","score_opus":0.006385154915900733,"score_gpt":0.21445671554691226,"score_spread":0.20807156063101154,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2970794242","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9846031,0.0000092766095,0.013434167,0.000095484946,0.00023259358,0.00025175535,0.000016302214,0.0001332086,0.0012240915],"genre_scores_gemma":[0.99860394,0.0000071670615,0.0000414764,0.000017903,0.000027399472,0.000036547757,0.000002257038,0.000012757471,0.0012505624],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9992649,0.000026295267,0.00022298843,0.00018549224,0.00013110369,0.00016921293],"domain_scores_gemma":[0.9995642,0.000037098718,0.00012439348,0.00020085597,0.000049955015,0.000023505669],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000070362934,0.000118222284,0.0001730423,0.00015882365,0.00006636153,0.000024893698,0.00010536483,0.00005014949,0.00067150476],"category_scores_gemma":[6.488129e-7,0.00011033666,0.00009610748,0.00025592744,0.000028267837,0.00019490528,5.405902e-7,0.00015504732,0.00008057939],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00015840397,0.00047684024,0.015712155,0.00017488615,0.00034565627,1.9460242e-7,0.00087576,0.018798208,0.8604722,0.004104101,0.000029481163,0.09885212],"study_design_scores_gemma":[0.00031584103,0.0001801837,0.0027507665,0.000022762626,0.000017815217,5.4801586e-7,0.00023962042,0.0023624185,0.9916284,0.00020272471,0.0021192164,0.0001596648],"about_ca_topic_score_codex":0.000021848384,"about_ca_topic_score_gemma":0.0000073075967,"teacher_disagreement_score":0.13115625,"about_ca_system_score_codex":0.000028615563,"about_ca_system_score_gemma":0.000031462,"threshold_uncertainty_score":0.7352506},"labels":[],"label_agreement":null},{"id":"W2984054658","doi":"10.1109/ted.2019.2947565","title":"Suppression of Capillary Flow in Slot-Die Coating for the Fabrication of Fine OLED Stripe","year":2019,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Nanomaterials and Printing Technologies","field":"Engineering","cited_by":5,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McMaster University","funders":"National Research Foundation of Korea","keywords":"Fabrication; Die (integrated circuit); OLED; Capillary action; Materials science; Coating; Optoelectronics; Flow (mathematics); Layer (electronics); Physics; Composite material; Nanotechnology; Mechanics","score_opus":0.009066564635308031,"score_gpt":0.22449033663915358,"score_spread":0.21542377200384555,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2984054658","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9248448,0.0005173226,0.073852874,0.00005740966,0.00024466752,0.00032824217,0.000015258905,0.000107631895,0.00003181712],"genre_scores_gemma":[0.9980398,0.00020237378,0.0016655724,0.0000030937606,0.00000977391,0.000046256864,0.000002810705,0.000013763371,0.000016571728],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9994409,0.000014996186,0.00023864223,0.000093139184,0.00007362688,0.00013868079],"domain_scores_gemma":[0.99951035,0.0002020256,0.000057955014,0.00018674861,0.000036043417,0.0000068860327],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0001413217,0.00008556767,0.00016073232,0.00010205947,0.000028566381,0.0000069171415,0.00014355502,0.00007109022,0.00002106617],"category_scores_gemma":[0.0000071126565,0.00006586414,0.00004553994,0.00013893351,0.000014446502,0.00006261344,8.771385e-7,0.00009053988,0.0000018080437],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00003877666,0.000024326453,0.000096617376,0.00019225398,0.00002520271,4.003621e-8,0.00008385504,0.14986518,0.8249816,0.00002049836,0.000011101593,0.024660576],"study_design_scores_gemma":[0.00025872895,0.000101528596,0.0007489283,0.0000737921,0.00001566025,3.4519985e-7,0.000048009522,0.07967656,0.9187918,0.000054182066,0.00016794624,0.0000625732],"about_ca_topic_score_codex":0.00005483559,"about_ca_topic_score_gemma":0.00018222471,"teacher_disagreement_score":0.09381018,"about_ca_system_score_codex":0.000022991262,"about_ca_system_score_gemma":0.000011543162,"threshold_uncertainty_score":0.26858613},"labels":[],"label_agreement":null},{"id":"W2998437992","doi":"10.1109/ted.2019.2956890","title":"CMOS-Like Logic Circuits With Unipolar Thin-Film Transistors on Flexible Substrate","year":2019,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":11,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"NAND gate; CMOS; Pass transistor logic; Logic gate; Electronic circuit; NAND logic; Electronic engineering; NMOS logic; AND-OR-Invert; Digital electronics; Logic level; NOR gate; Computer science; Transistor; Logic family; Electrical engineering; Engineering; Logic synthesis; Voltage","score_opus":0.010009416608432404,"score_gpt":0.20398385856496737,"score_spread":0.19397444195653496,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2998437992","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.92622405,0.0011497282,0.058472876,0.00030803107,0.0014712604,0.00082838885,0.000058912683,0.00522104,0.0062657096],"genre_scores_gemma":[0.99786514,0.00024199112,0.00027928175,0.0002294455,0.000024722956,0.00008455827,0.000008118829,0.00014875527,0.001117981],"study_design_codex":"simulation_or_modeling","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9975921,0.00005452657,0.0003747764,0.00063581025,0.00048272868,0.0008600814],"domain_scores_gemma":[0.99885833,0.00011393618,0.000066068504,0.0007752856,0.000060611117,0.0001257433],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.00015085292,0.0006018043,0.0004926166,0.00052202935,0.00020558987,0.000079612415,0.0005466714,0.00036221783,0.00021323201],"category_scores_gemma":[0.0000011262384,0.000546402,0.00019051049,0.0008702604,0.00010908789,0.0004202572,5.383825e-7,0.0011931327,0.0005033248],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00017253516,0.0002975337,0.00016245492,0.00033651685,0.00048176834,0.000026153186,0.00058169337,0.9386866,0.052918725,0.00083634193,0.00022475897,0.0052748844],"study_design_scores_gemma":[0.0023348713,0.002776523,0.0017950534,0.00033459376,0.00034762974,0.00007762068,0.0005220586,0.011083678,0.9623038,0.00036390443,0.016092058,0.0019682057],"about_ca_topic_score_codex":0.000055288372,"about_ca_topic_score_gemma":0.00079495955,"teacher_disagreement_score":0.92760295,"about_ca_system_score_codex":0.00037521162,"about_ca_system_score_gemma":0.00007866942,"threshold_uncertainty_score":0.99969876},"labels":[],"label_agreement":null},{"id":"W3000596657","doi":"10.1109/ted.2019.2958789","title":"Use of Pulse-Height Spectroscopy to Characterize the Hole Conduction Mechanism of a Polyimide Blocking Layer Used in Amorphous-Selenium Radiation Detectors","year":2020,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Advanced Semiconductor Detectors and Materials","field":"Engineering","cited_by":10,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Concordia University; University of Waterloo","funders":"Natural Sciences and Engineering Research Council of Canada; University of Waterloo","keywords":"Cadmium zinc telluride; Materials science; Optoelectronics; Detector; Electric field; Polyimide; Dark current; Particle detector; Spectroscopy; Photoconductivity; Amorphous solid; Photon; Optics; Layer (electronics); Photodetector; Physics; Chemistry; Nanotechnology","score_opus":0.03158439121458019,"score_gpt":0.2390655659224588,"score_spread":0.20748117470787864,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3000596657","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.95188755,0.00006119796,0.04689765,0.000095028554,0.00041929111,0.00044769622,0.00005538219,0.00013082146,0.000005414794],"genre_scores_gemma":[0.99922115,0.0001200319,0.00037010954,0.00009656844,0.00006699905,0.000058753445,0.000004555608,0.000055150194,0.000006675883],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9987226,0.00007004827,0.0004556051,0.0002449074,0.00019259551,0.0003142107],"domain_scores_gemma":[0.9994451,0.000094700066,0.0001299451,0.00020694715,0.000044873883,0.0000784794],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000089933084,0.00022877363,0.00036198043,0.00020103557,0.000054497472,0.00003029118,0.0001559054,0.00010088905,0.000076406315],"category_scores_gemma":[0.000010413655,0.00020136073,0.00008410469,0.0005885326,0.00002352599,0.00034644312,0.0000014771418,0.00024512998,0.0000064487203],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00010698133,0.000027295186,0.00002336815,0.000056038123,0.000041914696,7.189691e-7,0.00056353136,0.026101999,0.9724627,0.000014015536,0.0000072811767,0.00059412594],"study_design_scores_gemma":[0.00028466078,0.00026344377,0.00047441456,0.000038978673,0.000040926872,0.000002596863,0.000060042,0.003538257,0.99488175,0.000018517709,0.00021023586,0.00018617074],"about_ca_topic_score_codex":0.00018130211,"about_ca_topic_score_gemma":0.00038865537,"teacher_disagreement_score":0.047333635,"about_ca_system_score_codex":0.00010432287,"about_ca_system_score_gemma":0.000028782497,"threshold_uncertainty_score":0.8211252},"labels":[],"label_agreement":null},{"id":"W3016116764","doi":"10.1109/ted.2020.2980329","title":"A Parametric Technique for Trap Characterization in AlGaN/GaN HEMTs","year":2020,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":20,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Institut interdisciplinaire d'innovation technologique; Université de Sherbrooke","funders":"Liverpool John Moores University","keywords":"Trapping; Charge (physics); Time constant; Materials science; Transistor; Degradation (telecommunications); Optoelectronics; Analytical Chemistry (journal); Atomic physics; Physics; Chemistry; Electrical engineering; Voltage; Quantum mechanics; Biology","score_opus":0.018536682748734042,"score_gpt":0.2586343268983408,"score_spread":0.24009764414960677,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3016116764","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.63304245,0.000016472773,0.3650543,0.00046773898,0.00013090471,0.0009151728,0.00020371041,0.00006922459,0.00010002345],"genre_scores_gemma":[0.99842954,0.000008295675,0.00027913443,0.00039380504,0.00013227266,0.0005770767,0.00009795451,0.000035902816,0.000046026624],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.998849,0.000048507925,0.00031346927,0.00034323422,0.0001089397,0.00033687294],"domain_scores_gemma":[0.9995424,0.000068880945,0.000120894176,0.00013406073,0.00004159859,0.00009214402],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00010497495,0.00020749457,0.00027257588,0.00017969657,0.000091606824,0.000064518914,0.00015442849,0.000072670984,0.0002153888],"category_scores_gemma":[0.0000013777692,0.00020755622,0.00012066695,0.00054275803,0.000015534091,0.0002148939,4.5122601e-7,0.00017809877,0.000020685879],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000108713575,0.00019133714,0.00033590326,0.000072631316,0.00004659326,5.229611e-7,0.00018304403,0.00041756284,0.9925716,0.00017864346,0.00001823002,0.005875201],"study_design_scores_gemma":[0.0005956497,0.00031081968,0.0004486733,0.00002930845,0.000041962903,5.823124e-7,0.000059003225,0.0007652925,0.99493235,0.00015490192,0.0024217246,0.00023974253],"about_ca_topic_score_codex":0.00007836213,"about_ca_topic_score_gemma":0.000026921918,"teacher_disagreement_score":0.36538708,"about_ca_system_score_codex":0.000033103075,"about_ca_system_score_gemma":0.00006223067,"threshold_uncertainty_score":0.8463897},"labels":[],"label_agreement":null},{"id":"W3021742783","doi":"10.1109/ted.2020.2988857","title":"Deep Gate Field Penetration Au:ZrO<sup>2</sup> Metal–Insulator Tunneling Transistor","year":2020,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Semiconductor materials and devices","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Alberta","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Quantum tunnelling; Transistor; Field-effect transistor; CMOS; Planar; Optoelectronics; Electrical engineering; Metal gate; Gate oxide; Materials science; Analytical Chemistry (journal); Physics; Chemistry; Computer science; Voltage; Engineering","score_opus":0.014263295243287013,"score_gpt":0.2160013881542181,"score_spread":0.2017380929109311,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3021742783","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.91253555,0.00080748124,0.08439094,0.00031492297,0.0005966885,0.00025994697,0.00001608161,0.0006439201,0.00043450054],"genre_scores_gemma":[0.99837655,0.0001654173,0.0002816226,0.0007203759,0.0002909471,0.000051468334,0.000009928527,0.000069984766,0.00003371735],"study_design_codex":"simulation_or_modeling","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99845153,0.000050315724,0.00041208323,0.00037101275,0.00024852692,0.0004665095],"domain_scores_gemma":[0.99941516,0.000095511066,0.00004983787,0.00020812708,0.00004338373,0.00018796751],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.00009879188,0.00033198483,0.0003422748,0.000120721146,0.00018509981,0.000106297564,0.00021813506,0.00016956755,0.00045321393],"category_scores_gemma":[0.0000040770788,0.0003352202,0.00016804558,0.00031880167,0.000020631589,0.00045772654,6.1644073e-7,0.00032094566,0.00014779807],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0000959875,0.000050022045,0.000018051776,0.00023476825,0.00020877566,0.0000045690413,0.0021543324,0.58495724,0.40861806,0.000032133055,0.00006315548,0.0035629033],"study_design_scores_gemma":[0.00045826775,0.0003124104,0.00005023746,0.00003222246,0.00016574736,0.000008447748,0.00023602504,0.25613117,0.7388177,0.000024893316,0.0033016314,0.00046125826],"about_ca_topic_score_codex":0.00010389797,"about_ca_topic_score_gemma":0.00030892357,"teacher_disagreement_score":0.33019966,"about_ca_system_score_codex":0.00010320246,"about_ca_system_score_gemma":0.000047382757,"threshold_uncertainty_score":0.99991},"labels":[],"label_agreement":null},{"id":"W3022201269","doi":"10.1109/ted.2020.2985023","title":"Assessing the Role of a Semiconductor’s Anisotropic Permittivity in Hafnium Disulfide Monolayer Field-Effect Transistors","year":2020,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Semiconductor materials and devices","field":"Engineering","cited_by":9,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Permittivity; Materials science; Relative permittivity; Capacitance; Semiconductor; Isotropy; Field-effect transistor; Anisotropy; Transistor; Condensed matter physics; Optoelectronics; Dielectric; Electrical engineering; Optics; Physics; Engineering; Voltage","score_opus":0.011939423219267485,"score_gpt":0.24851647748791508,"score_spread":0.23657705426864759,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3022201269","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9948646,0.0011640379,0.0027809134,0.00018053588,0.00030242838,0.00023909617,0.000007646709,0.00016275207,0.0002980109],"genre_scores_gemma":[0.9995631,0.000089228175,0.000036802703,0.00015893341,0.0000688553,0.000041090832,0.0000011912911,0.00003665055,0.0000041532257],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9988234,0.00012361552,0.00032615222,0.00024620944,0.00016946916,0.0003111297],"domain_scores_gemma":[0.9993998,0.00025828116,0.000056780653,0.00019868324,0.000019693678,0.00006678319],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00013191809,0.00024059568,0.00034822876,0.00008961964,0.00007855379,0.00007451477,0.00022550937,0.00011796326,0.00008809771],"category_scores_gemma":[0.0000058437868,0.0001876053,0.00012812344,0.000314889,0.000023256363,0.00042747377,9.618687e-7,0.00037050247,0.0000105512445],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000037335973,0.000035841433,0.0008923978,0.00012920675,0.00006023989,0.0000016363856,0.0009293917,0.008087178,0.98455644,0.000008324724,0.000013205858,0.0052487827],"study_design_scores_gemma":[0.00029455542,0.00020959892,0.0013200581,0.000046538215,0.000058225934,0.000003424917,0.00034147533,0.009024705,0.9878381,0.000024168814,0.0006418409,0.0001973478],"about_ca_topic_score_codex":0.00020390899,"about_ca_topic_score_gemma":0.00036103642,"teacher_disagreement_score":0.005051435,"about_ca_system_score_codex":0.000063693486,"about_ca_system_score_gemma":0.00003141972,"threshold_uncertainty_score":0.7650322},"labels":[],"label_agreement":null},{"id":"W3023484550","doi":"10.1109/ted.2020.2988855","title":"Design and Simulation of Steep-Slope Silicon Cold Source FETs With Effective Carrier Distribution Model","year":2020,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":27,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McGill University","funders":"Fonds de recherche du Québec – Nature et technologies; Higher Education Discipline Innovation Project; Natural Sciences and Engineering Research Council of Canada; National Natural Science Foundation of China","keywords":"MOSFET; Quantum tunnelling; Field-effect transistor; Transistor; Silicon; Non-equilibrium thermodynamics; Thermalisation; Materials science; Optoelectronics; Physics; Topology (electrical circuits); Electrical engineering; Engineering; Thermodynamics; Voltage","score_opus":0.013843355873824752,"score_gpt":0.22933456842365907,"score_spread":0.2154912125498343,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3023484550","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.25281605,0.00023590599,0.74627113,0.000012268879,0.000028513838,0.00045975184,0.000030355084,0.000120804194,0.000025194697],"genre_scores_gemma":[0.9994423,0.000056378678,0.00028892688,0.000063421845,0.000017285545,0.00006650738,0.000007243124,0.00003885306,0.000019088664],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9990977,0.000047764257,0.00019798311,0.00024833967,0.00017918793,0.00022903306],"domain_scores_gemma":[0.9995378,0.00013835072,0.00006146702,0.00012087967,0.000052405507,0.000089076726],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00006886338,0.00020764445,0.00022571169,0.000041075527,0.00009121877,0.000022501841,0.000078863384,0.00008077233,0.000010573238],"category_scores_gemma":[0.0000017745226,0.00019606021,0.000034328143,0.00023177562,0.000034402612,0.00028363947,4.999893e-7,0.00020449123,0.0000020628086],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000108297594,0.000023324881,0.0000172834,0.00009073639,0.00009323337,4.83217e-7,0.0003684277,0.9254827,0.06731381,0.000014945791,0.000005502712,0.006481289],"study_design_scores_gemma":[0.00040046513,0.00036864547,0.000020569998,0.000030283463,0.0000804458,0.0000010518413,0.0000484815,0.7078775,0.29081652,0.000013595522,0.00018100644,0.00016141924],"about_ca_topic_score_codex":0.0000045438296,"about_ca_topic_score_gemma":0.0000101530695,"teacher_disagreement_score":0.74662626,"about_ca_system_score_codex":0.00008631068,"about_ca_system_score_gemma":0.00002115198,"threshold_uncertainty_score":0.79951036},"labels":[],"label_agreement":null},{"id":"W3037534544","doi":"10.1109/ted.2020.3001248","title":"RF Performance Projections of Negative-Capacitance FETs: <i>f<sub>T</sub> </i>, <i>f</i> <sub>max</sub>, and <i>g<sub>m</sub>f<sub>T</sub>/I<sub>D</sub> </i>","year":2020,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Ferroelectric and Negative Capacitance Devices","field":"Engineering","cited_by":17,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Alberta","funders":"Natural Sciences and Engineering Research Council of Canada; Alberta Innovates - Technology Futures","keywords":"Transconductance; Physics; Transistor; Quantum mechanics; Voltage","score_opus":0.01137208934840532,"score_gpt":0.19787684598256353,"score_spread":0.18650475663415822,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3037534544","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.95710576,0.004261142,0.030726152,0.00074977486,0.0013084027,0.0025566062,0.000520041,0.0018006419,0.00097145856],"genre_scores_gemma":[0.9758821,0.020137789,0.0002481355,0.0012743807,0.0006411688,0.0011459957,0.000091132126,0.0005631583,0.00001610475],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.98945576,0.00048660842,0.002442647,0.0026282326,0.0017824273,0.003204324],"domain_scores_gemma":[0.99465656,0.0010252458,0.0010230961,0.0013369174,0.00089053396,0.0010676674],"candidate_categories":["metaepi_narrow","sts","research_integrity"],"consensus_categories":["metaepi_narrow"],"category_scores_codex":[0.00079404,0.0024957967,0.0023773615,0.001246176,0.0015961488,0.00040632446,0.001208375,0.0010554579,0.000018273546],"category_scores_gemma":[0.00011411931,0.0027338518,0.0009587035,0.005425813,0.0009460222,0.0033038454,0.000028155346,0.0036989923,0.00037252367],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00076434127,0.0005279481,0.00020983959,0.0014191226,0.00097087695,0.000039171,0.0021248646,0.01011698,0.94561553,0.00006566019,0.0016516157,0.036494073],"study_design_scores_gemma":[0.0027809867,0.0018565095,0.0012142628,0.00087601464,0.00081806356,0.00015970206,0.00072617666,0.013891487,0.9739645,0.00018091917,0.0009186311,0.002612742],"about_ca_topic_score_codex":0.000037776288,"about_ca_topic_score_gemma":0.0016944176,"teacher_disagreement_score":0.03388133,"about_ca_system_score_codex":0.0010013728,"about_ca_system_score_gemma":0.00060378114,"threshold_uncertainty_score":0.99970365},"labels":[],"label_agreement":null},{"id":"W3038021281","doi":"10.1109/ted.2020.3002208","title":"Printed Logic Gates Based on Enhancement- and Depletion-Mode Electrolyte-Gated Transistors","year":2020,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Semiconductor materials and devices","field":"Engineering","cited_by":15,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Transistor; Logic gate; Electrical engineering; Pass transistor logic; Materials science; Optoelectronics; Electronic engineering; Inverter; Threshold voltage; Resistor; Current-mode logic; Voltage; Engineering","score_opus":0.012368666682199901,"score_gpt":0.2274772538385547,"score_spread":0.21510858715635478,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3038021281","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.91791886,0.00041492953,0.079089575,0.0007497412,0.00025251534,0.00033095386,0.000025851123,0.00073295773,0.0004846366],"genre_scores_gemma":[0.9981813,0.00020703518,0.0002120162,0.0012061871,0.000054550466,0.00005006509,0.000015031865,0.00005574511,0.000018056502],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9986756,0.000051261883,0.00028806215,0.00037564893,0.00020127141,0.00040814155],"domain_scores_gemma":[0.9995235,0.000086792665,0.00004432006,0.0001611287,0.000035061614,0.00014918152],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.00006400312,0.00031842777,0.00029379138,0.00013765812,0.00012766068,0.00007367229,0.00013804469,0.000117092895,0.000333442],"category_scores_gemma":[0.000003014682,0.00030223196,0.00008195825,0.00029321434,0.000033580876,0.00015311156,3.844056e-7,0.00027795372,0.00005705223],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00023619793,0.00009172406,0.000020654783,0.00019501426,0.00010672366,0.000003086194,0.00020309091,0.053478364,0.9443034,0.00004020256,0.00008336816,0.0012382071],"study_design_scores_gemma":[0.00058314693,0.00061557034,0.00007025739,0.000051738967,0.00006615159,0.0000024430626,0.000029017256,0.09252172,0.90378076,0.000024470748,0.0019203047,0.00033443535],"about_ca_topic_score_codex":0.000033615026,"about_ca_topic_score_gemma":0.00012385767,"teacher_disagreement_score":0.080262475,"about_ca_system_score_codex":0.00008083466,"about_ca_system_score_gemma":0.000028987075,"threshold_uncertainty_score":0.99994296},"labels":[],"label_agreement":null},{"id":"W3039564044","doi":"10.1109/ted.2020.3003847","title":"Modeling Bias Dependence of Self-Heating in GaN HEMTs Using Two Heat Sources","year":2020,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":27,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"High-electron-mobility transistor; Gallium nitride; Materials science; Transistor; Heat sink; Optoelectronics; Heat generation; Wide-bandgap semiconductor; Thermal; Mechanics; Computational physics; Physics; Thermodynamics; Electrical engineering; Nanotechnology; Engineering","score_opus":0.03863925681996503,"score_gpt":0.27854716089219494,"score_spread":0.23990790407222992,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3039564044","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9432553,0.000099017205,0.0561143,0.00006339337,0.00009317739,0.00018680621,0.000020848098,0.000056331373,0.000110817855],"genre_scores_gemma":[0.9989626,0.00000746749,0.0007617626,0.00010958583,0.0001075166,0.000013688631,0.0000039060724,0.000029370678,0.0000041189696],"study_design_codex":"simulation_or_modeling","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9985964,0.000085431035,0.00043530954,0.00033144047,0.0001904146,0.00036102324],"domain_scores_gemma":[0.9995527,0.00006298472,0.00009549678,0.00014533669,0.000050251056,0.00009318771],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00014530458,0.00021538483,0.00033261275,0.00011078674,0.000120374556,0.00005322274,0.00017661153,0.000044965356,0.00013867317],"category_scores_gemma":[0.0000010537418,0.0002146732,0.000110463625,0.00030887444,0.00001651155,0.00025734038,0.0000013973215,0.00023767243,0.00000756531],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000037103942,0.00011134186,0.0021663387,0.00007618266,0.000059314738,8.789353e-7,0.0009947976,0.6417649,0.35417834,0.000045944955,4.7708096e-7,0.00056442706],"study_design_scores_gemma":[0.00044427792,0.00009376726,0.00001660377,0.00008866438,0.000057826244,0.0000010186717,0.0005825134,0.34984565,0.6485951,0.00007098993,0.0000122346555,0.00019138199],"about_ca_topic_score_codex":0.0036350277,"about_ca_topic_score_gemma":0.00032619608,"teacher_disagreement_score":0.29441676,"about_ca_system_score_codex":0.000038551836,"about_ca_system_score_gemma":0.00010109306,"threshold_uncertainty_score":0.87541187},"labels":[],"label_agreement":null},{"id":"W3043253403","doi":"10.1109/ted.2020.3007598","title":"Numerical Solutions for Electric Field Lines and Breakdown Voltages in Superjunction-Like Power Devices","year":2020,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Silicon Carbide Semiconductor Technologies","field":"Engineering","cited_by":9,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Toronto","funders":"Fundamental Research Funds for the Central Universities; China Scholarship Council; National Natural Science Foundation of China","keywords":"Electric field; Breakdown voltage; Impact ionization; Voltage; High voltage; Insulator (electricity); Pillar; Electronic engineering; Electrical engineering; Computational physics; Field (mathematics); Physics; Computer science; Ionization; Optoelectronics; Engineering; Mathematics; Mechanical engineering","score_opus":0.016144293111943545,"score_gpt":0.23346030143211963,"score_spread":0.21731600832017609,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3043253403","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.93888634,0.0032013732,0.05333226,0.002135073,0.00044461165,0.0005116595,0.000017485749,0.0013293431,0.00014181776],"genre_scores_gemma":[0.99854654,0.00033135727,0.00014235527,0.00067499257,0.000052343807,0.00017983322,0.000002601567,0.000045716908,0.000024235063],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.998652,0.000020839245,0.00029057325,0.00036220683,0.00012723108,0.00054719637],"domain_scores_gemma":[0.99934036,0.0003255698,0.000030172958,0.00017256009,0.000044601707,0.000086712425],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.00006526076,0.00026471438,0.00028577427,0.00028927898,0.00013209565,0.000055625787,0.00018946895,0.00021485846,0.00006403319],"category_scores_gemma":[0.000024127887,0.00027134753,0.00009587681,0.0007099827,0.000025739979,0.00029912204,0.000001594971,0.00046984758,0.000014693402],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00021218538,0.00019297173,0.002084166,0.00037092547,0.00034117565,0.0000073883057,0.00069956994,0.0571171,0.9006652,0.00019570287,0.0043063965,0.0338072],"study_design_scores_gemma":[0.0011788945,0.0013307156,0.0016988021,0.00006467429,0.00012851675,0.00003551386,0.00074028526,0.17973863,0.80619127,0.0001517648,0.007834041,0.0009069183],"about_ca_topic_score_codex":0.00008236194,"about_ca_topic_score_gemma":0.0005683882,"teacher_disagreement_score":0.12262152,"about_ca_system_score_codex":0.00008069172,"about_ca_system_score_gemma":0.000033055177,"threshold_uncertainty_score":0.9999739},"labels":[],"label_agreement":null},{"id":"W3046463280","doi":"10.1109/ted.2020.3007398","title":"Sustained Benefits of NCFETs Under Extreme Scaling to the End of the IRDS","year":2020,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Ferroelectric and Negative Capacitance Devices","field":"Engineering","cited_by":12,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Alberta","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Quantum tunnelling; Physics; Scaling; Transistor; Subthreshold slope; Thermionic emission; Quantum; Field-effect transistor; Quantization (signal processing); Ballistic conduction; Condensed matter physics; Electron; Voltage; Quantum mechanics; Computer science","score_opus":0.022513902049981983,"score_gpt":0.21890563924591128,"score_spread":0.19639173719592928,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3046463280","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.87788355,0.0015708783,0.11526035,0.003436457,0.00024406383,0.000444354,0.000039487015,0.00012986355,0.0009910169],"genre_scores_gemma":[0.9992072,0.00010877139,0.0000704373,0.0004688108,0.000046976496,0.000024272285,5.9126796e-7,0.000028114498,0.000044856646],"study_design_codex":"simulation_or_modeling","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9989552,0.000048756683,0.0002720482,0.00016984493,0.00027127532,0.00028290876],"domain_scores_gemma":[0.9994093,0.00015443098,0.0000632157,0.00021681414,0.00009342268,0.00006282361],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000099689474,0.00017258278,0.0002128308,0.00007258055,0.00011080001,0.000013466192,0.00033849542,0.000060610564,0.000055036882],"category_scores_gemma":[0.000007954366,0.00011358259,0.00012507282,0.0009255101,0.00005827374,0.00010239846,0.0000017007143,0.0002725528,0.000008213951],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00012326564,0.00006473137,0.00005125654,0.00022042874,0.00026845097,3.9385336e-7,0.0028620595,0.8910793,0.08071462,0.0009991252,0.00030803407,0.02330833],"study_design_scores_gemma":[0.0002885075,0.0002208444,0.0014442748,0.000082619394,0.000093854775,0.0000021002018,0.0007797225,0.020056069,0.97596294,0.00009572299,0.000774391,0.00019897781],"about_ca_topic_score_codex":0.000019964511,"about_ca_topic_score_gemma":0.00034056188,"teacher_disagreement_score":0.8952483,"about_ca_system_score_codex":0.000059353315,"about_ca_system_score_gemma":0.000040596107,"threshold_uncertainty_score":0.46317634},"labels":[],"label_agreement":null},{"id":"W3097590894","doi":"10.1109/ted.2020.3033793","title":"Investigation Into Self Actuation Limitation and Current Carrying Capacity of Chalcogenide Phase Change GeTe-Based RF Switches","year":2020,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Phase-change materials and chalcogenides","field":"Materials Science","cited_by":23,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Radio frequency; Power (physics); Electrical engineering; RF power amplifier; Voltage; RF switch; Materials science; Electronic engineering; Optoelectronics; Engineering; CMOS","score_opus":0.11055549764982463,"score_gpt":0.29771457733525053,"score_spread":0.1871590796854259,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3097590894","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9734481,0.00035467013,0.024394391,0.0009119221,0.00021619115,0.0004528626,0.000056200017,0.00016064297,0.000005033071],"genre_scores_gemma":[0.99852955,0.00013069212,0.00063111505,0.000344872,0.00014644102,0.00016570736,0.00002601412,0.000024793417,8.137673e-7],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99857396,0.00009775475,0.0003682036,0.0003944548,0.00029899256,0.00026662345],"domain_scores_gemma":[0.9992391,0.00009854876,0.00026246725,0.00014092244,0.0001044906,0.00015449213],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0002655017,0.00023107686,0.00027359885,0.00014859541,0.00021851152,0.000073685485,0.00012336239,0.00008907376,0.000041744333],"category_scores_gemma":[0.000012981355,0.00022603809,0.00006893501,0.00025371736,0.00007855015,0.0005135338,0.0000018013335,0.00012550288,0.000019317587],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00011473651,0.00011294492,0.00003093224,0.00031600837,0.000017282657,4.3069193e-7,0.0055618277,0.000174692,0.98841524,0.000035352517,0.0000035603357,0.0052170046],"study_design_scores_gemma":[0.00084553304,0.0005603757,0.00011402909,0.00007972955,0.000118346106,0.0000016349106,0.00017871709,0.005458053,0.9920324,0.00031975593,0.00007746512,0.00021394073],"about_ca_topic_score_codex":0.00020084117,"about_ca_topic_score_gemma":0.0003660889,"teacher_disagreement_score":0.025081463,"about_ca_system_score_codex":0.000102238,"about_ca_system_score_gemma":0.0000730222,"threshold_uncertainty_score":0.92175657},"labels":[],"label_agreement":null},{"id":"W3112323218","doi":"10.1109/ted.2020.3041216","title":"Negative-Capacitance FET With a Cold Source","year":2020,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Ferroelectric and Negative Capacitance Devices","field":"Engineering","cited_by":17,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McGill University","funders":"Fonds de recherche du Québec – Nature et technologies; China Scholarship Council; Natural Sciences and Engineering Research Council of Canada; National Natural Science Foundation of China","keywords":"Field-effect transistor; Capacitance; Ferroelectricity; Transistor; Physics; Materials science; Optoelectronics; Analytical Chemistry (journal); Electrical engineering; Quantum mechanics; Chemistry; Electrode; Dielectric; Engineering","score_opus":0.011426983786815684,"score_gpt":0.19506789951673123,"score_spread":0.18364091572991553,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3112323218","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.3472502,0.0007326095,0.6462041,0.00071279804,0.00013030725,0.00039474652,0.00002810141,0.0010650271,0.0034820945],"genre_scores_gemma":[0.9977048,0.0001608627,0.00061572436,0.0010088524,0.00007910867,0.00010129389,0.0000014066288,0.00007378109,0.0002541713],"study_design_codex":"simulation_or_modeling","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99859565,0.000042635435,0.00021731653,0.00035752787,0.00028066346,0.00050620275],"domain_scores_gemma":[0.999368,0.00014975955,0.00005169783,0.00017610614,0.0000696145,0.00018480944],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.000050573126,0.00033536213,0.0003033534,0.000100362704,0.00017223983,0.00005718036,0.00022046917,0.00009203775,0.0001078238],"category_scores_gemma":[0.000003684244,0.00029962813,0.00008415777,0.0009082893,0.000080868,0.00036126762,2.4002202e-7,0.00056029076,0.00014964612],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0016562178,0.0004197117,0.00033282337,0.0009755608,0.0019346329,0.00006532188,0.0098525835,0.5374798,0.40549013,0.0010543168,0.005768326,0.034970544],"study_design_scores_gemma":[0.0008776898,0.0010090605,0.000093140996,0.00008560662,0.00008775805,0.000011809747,0.0003552805,0.04139039,0.944282,0.000031250493,0.011162168,0.0006138745],"about_ca_topic_score_codex":0.000009062678,"about_ca_topic_score_gemma":0.00018440402,"teacher_disagreement_score":0.6504546,"about_ca_system_score_codex":0.0001067505,"about_ca_system_score_gemma":0.000037594855,"threshold_uncertainty_score":0.9999456},"labels":[],"label_agreement":null},{"id":"W3112926552","doi":"10.1109/ted.2020.3038623","title":"Low-Temperature Self-Aligned-Silicide-Capable Transistor Process Using Solid-Phase-Epitaxy and Lift-Off for Hybrid Substrates","year":2020,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Materials science; Optoelectronics; Plasma-enhanced chemical vapor deposition; Silicon; Transistor; Amorphous solid; Epitaxy; Electron mobility; Fabrication; Bilayer; Nanotechnology; Voltage; Electrical engineering; Layer (electronics); Chemistry; Crystallography","score_opus":0.011842196968918561,"score_gpt":0.26324409847316266,"score_spread":0.2514019015042441,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3112926552","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9473175,0.0024561968,0.046028428,0.0004757679,0.0002439335,0.00077895325,0.00020814443,0.0024648146,0.000026294598],"genre_scores_gemma":[0.9975952,0.0003614349,0.0014200938,0.00019524255,0.00008321473,0.00018410994,0.000012007598,0.00013749833,0.0000112146045],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9980127,0.00002912286,0.00044078392,0.00057956355,0.00023867442,0.00069910457],"domain_scores_gemma":[0.9992857,0.0001043199,0.00006540626,0.0002596089,0.00010142277,0.00018354159],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.000099166245,0.00051740935,0.0005268454,0.00021408165,0.0003349177,0.00012827016,0.00032058675,0.00027073128,0.000021998923],"category_scores_gemma":[0.0000057511197,0.00054361776,0.00017774552,0.00047962271,0.00008083304,0.0005221175,6.494493e-7,0.00048515594,0.000015229301],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00020927946,0.00026721013,0.000011884141,0.0015420937,0.00041401855,0.00001222894,0.001631199,0.086950265,0.9055839,0.000016937878,0.00021771679,0.0031432386],"study_design_scores_gemma":[0.0011648828,0.0005349881,0.000010743794,0.00008958222,0.00026799054,0.000026381702,0.0003305171,0.043014146,0.95290685,0.00005233902,0.0010253596,0.0005762452],"about_ca_topic_score_codex":0.000008753986,"about_ca_topic_score_gemma":0.00014472163,"teacher_disagreement_score":0.050277717,"about_ca_system_score_codex":0.0001538451,"about_ca_system_score_gemma":0.000093954506,"threshold_uncertainty_score":0.99970156},"labels":[],"label_agreement":null},{"id":"W3117376328","doi":"10.1109/ted.2020.3044559","title":"Using Anisotropic Insulators to Engineer the Electrostatics of Conventional and Tunnel Field-Effect Transistors","year":2020,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Semiconductor materials and devices","field":"Engineering","cited_by":6,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"National Institute for Nanotechnology; University of Waterloo","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Dielectric; Electrostatics; Materials science; Anisotropy; Insulator (electricity); Gate dielectric; Field-effect transistor; Optoelectronics; Transistor; Permittivity; Electric field; Semiconductor; Electrical engineering; Engineering physics; Physics; Engineering; Optics; Voltage","score_opus":0.017346112206468124,"score_gpt":0.24034692062092985,"score_spread":0.22300080841446174,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3117376328","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.90652174,0.0004087676,0.092333965,0.00018262248,0.0002221242,0.00019899166,0.00001651499,0.00008970772,0.000025567639],"genre_scores_gemma":[0.9991185,0.00005550833,0.00036146,0.00037048425,0.000048461923,0.000014348501,0.0000012329109,0.000026748881,0.0000032472758],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9992545,0.000034105666,0.00021707927,0.00014797335,0.00013954654,0.00020675054],"domain_scores_gemma":[0.9996431,0.00012588601,0.000028383529,0.00009579871,0.00002487049,0.00008196439],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00006212331,0.00016652272,0.00021105807,0.00006989529,0.00007180449,0.000028601711,0.000100826255,0.00006113491,0.00005914005],"category_scores_gemma":[0.0000037136276,0.00013359428,0.000065077606,0.00023342398,0.00002445845,0.00009528613,5.8513496e-7,0.00015310013,0.0000043388472],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000082343875,0.000020373694,0.00011455586,0.00024662967,0.00015450345,9.57522e-7,0.0007177844,0.0678157,0.9299981,0.00013684029,0.000044606946,0.0006675776],"study_design_scores_gemma":[0.00034777934,0.0005966678,0.00035971406,0.00003141374,0.000108906796,0.000006527774,0.00005977765,0.021503579,0.9761339,0.000024480412,0.00063309283,0.00019418384],"about_ca_topic_score_codex":0.000025514175,"about_ca_topic_score_gemma":0.000030899046,"teacher_disagreement_score":0.09259677,"about_ca_system_score_codex":0.000030352077,"about_ca_system_score_gemma":0.000018448878,"threshold_uncertainty_score":0.5447817},"labels":[],"label_agreement":null},{"id":"W3138534040","doi":"10.1109/ted.2021.3063073","title":"A Monolithic Amorphous-Selenium/CMOS Single-Photon-Counting X-Ray Detector","year":2021,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Advanced X-ray and CT Imaging","field":"Engineering","cited_by":5,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Science and Engineering Research Council; Canada Foundation for Innovation; CMC Microsystems","keywords":"CMOS; Dot pitch; Pixel; Detector; Photon counting; Optoelectronics; X-ray detector; Physics; Materials science; Image resolution; Photon; Image sensor; Optics; CMOS sensor","score_opus":0.009215506036227011,"score_gpt":0.21532780716656647,"score_spread":0.20611230113033946,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3138534040","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.57158107,0.0016204778,0.42402878,0.000072813375,0.0006053084,0.00017163687,0.000014927041,0.00097389816,0.0009310633],"genre_scores_gemma":[0.9971336,0.00024490125,0.0017957176,0.00022570463,0.00011175814,0.000082915496,0.0000044780195,0.00010579523,0.0002950915],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9982196,0.000046586363,0.00034584972,0.00040980475,0.00026929568,0.0007088786],"domain_scores_gemma":[0.9992436,0.00012890823,0.00005424113,0.00036008126,0.00009595862,0.00011718691],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.00010196848,0.0003451128,0.0003003193,0.00016940176,0.00026206346,0.000114103255,0.00018901065,0.0001373097,0.00018336649],"category_scores_gemma":[0.0000059294116,0.00038802103,0.00016403211,0.00061889144,0.000037746744,0.00045839368,0.0000011604894,0.0007060168,0.00012531046],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000031128988,0.00014662444,0.000031709165,0.00014486094,0.0002008098,0.000032296055,0.0003627764,0.17401388,0.8054845,0.000013950062,0.00002987449,0.019507624],"study_design_scores_gemma":[0.0003791248,0.0000785363,0.00006417178,0.00009244201,0.000091742295,0.00005603479,0.00018507746,0.024750935,0.9676968,0.00008489015,0.006065017,0.00045526167],"about_ca_topic_score_codex":0.000029808023,"about_ca_topic_score_gemma":0.0003840945,"teacher_disagreement_score":0.42555255,"about_ca_system_score_codex":0.00022611802,"about_ca_system_score_gemma":0.00006574067,"threshold_uncertainty_score":0.9998572},"labels":[],"label_agreement":null},{"id":"W3146831602","doi":"10.1109/ted.2021.3069153","title":"Effective Leakage Current Reduction in GaN Ultraviolet Avalanche Photodiodes With an Ion-Implantation Isolation Method","year":2021,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":25,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"","funders":"Army Research Office; National Institute for Nanotechnology; U.S. Department of Energy; National Science Foundation","keywords":"Avalanche photodiode; Photocurrent; Materials science; Optoelectronics; Dark current; Breakdown voltage; Chemical vapor deposition; Homojunction; Ion implantation; Metalorganic vapour phase epitaxy; Ultraviolet; Analytical Chemistry (journal); Photodiode; APDS; Ion; Voltage; Nanotechnology; Chemistry; Photodetector; Optics; Electrical engineering; Doping; Epitaxy; Physics","score_opus":0.01150012109295822,"score_gpt":0.2920899705238464,"score_spread":0.28058984943088816,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3146831602","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.84572315,0.00008862949,0.15308604,0.000037061563,0.00036463235,0.00040560716,0.00006465859,0.00005460894,0.00017560451],"genre_scores_gemma":[0.99851286,0.000026444846,0.0007911144,0.00002692807,0.00017656779,0.00019849444,0.00019434709,0.000031267507,0.00004199956],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9983757,0.00035577826,0.00028432446,0.0004787076,0.00018207528,0.00032342438],"domain_scores_gemma":[0.9993473,0.00009070555,0.00015212891,0.00022310962,0.00011123414,0.00007549765],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00022795663,0.0002511247,0.00027932157,0.00016364912,0.00016604672,0.00010710983,0.00008591186,0.00006302902,0.00022925512],"category_scores_gemma":[7.6669846e-7,0.0002304831,0.00007540407,0.00035803413,0.000022350598,0.00049068127,4.6005297e-7,0.00031993177,0.00001630997],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00036846905,0.00073572603,0.0011531608,0.00008798529,0.000117949996,0.000003117955,0.0010959937,0.013301083,0.9352628,0.00017337293,0.000016119913,0.04768422],"study_design_scores_gemma":[0.000907982,0.00035230134,0.0028277682,0.00012123203,0.00011088194,0.000017037488,0.0007932383,0.00085677917,0.99319845,0.00031172598,0.00020633634,0.0002962645],"about_ca_topic_score_codex":0.0005011246,"about_ca_topic_score_gemma":0.00049550866,"teacher_disagreement_score":0.15278967,"about_ca_system_score_codex":0.00008911763,"about_ca_system_score_gemma":0.00011128196,"threshold_uncertainty_score":0.9398828},"labels":[],"label_agreement":null},{"id":"W3152605160","doi":"10.1109/ted.2021.3070557","title":"Random Telegraph Signal in n<sup>+</sup>/p-Well CMOS Single-Photon Avalanche Diodes","year":2021,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Advanced Optical Sensing Technologies","field":"Physics and Astronomy","cited_by":20,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McMaster University","funders":"Natural Sciences and Engineering Research Council of Canada; Canada Research Chairs; CMC Microsystems","keywords":"Physics; Avalanche diode; Noise (video); Biasing; Single-photon avalanche diode; Avalanche photodiode; Diode; Amplitude; SIGNAL (programming language); Phase noise; Photon; Avalanche breakdown; Burst noise; Voltage; Optoelectronics; CMOS; Detector; Optics; Noise figure; Breakdown voltage; Quantum mechanics; Computer science","score_opus":0.010492594440378394,"score_gpt":0.23633515288657667,"score_spread":0.22584255844619827,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3152605160","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.6768545,0.00022022832,0.31905442,0.0003785614,0.00008007697,0.00026109567,0.000020234127,0.00027505026,0.0028558527],"genre_scores_gemma":[0.9950299,0.000031955635,0.0042822803,0.00009622936,0.00005771598,0.000053797106,0.000012444154,0.000038750775,0.00039692226],"study_design_codex":"design_other","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9981674,0.00009879096,0.00035178725,0.00052133884,0.0002338844,0.0006268006],"domain_scores_gemma":[0.99907744,0.00032420346,0.00007861573,0.00036488214,0.00007973089,0.0000751032],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.00010126332,0.00031485243,0.0003940349,0.00019119155,0.00018172269,0.00008045868,0.0002057915,0.00012731546,0.00040826976],"category_scores_gemma":[0.000004281755,0.00030050112,0.00020849796,0.0007228215,0.00011925022,0.00023299918,0.0000029321109,0.0007010881,0.000077445715],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0015310415,0.006393334,0.008117171,0.00014631322,0.0013478464,0.00017154028,0.001092434,0.31454498,0.30018616,0.0061426754,0.00035111752,0.3599754],"study_design_scores_gemma":[0.0018403253,0.00022359448,0.00010705358,0.00009619043,0.00008859623,0.000008084327,0.00049264857,0.008001197,0.98054236,0.0054551926,0.0026793987,0.00046533917],"about_ca_topic_score_codex":0.000088510664,"about_ca_topic_score_gemma":0.00015935104,"teacher_disagreement_score":0.6803562,"about_ca_system_score_codex":0.00009902159,"about_ca_system_score_gemma":0.000072963114,"threshold_uncertainty_score":0.9999447},"labels":[],"label_agreement":null},{"id":"W3152795045","doi":"10.1109/ted.2021.3069729","title":"Scalable mmWave Non-Volatile Phase Change GeTe-Based Compact Monolithically Integrated Wideband Digital Switched Attenuator","year":2021,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Photonic and Optical Devices","field":"Engineering","cited_by":25,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Attenuator (electronics); Materials science; Insertion loss; Resistor; Attenuation; Optoelectronics; Electrical engineering; Bandwidth (computing); Switching time; Center frequency; Electronic engineering; Computer science; Telecommunications; Engineering; Physics; Band-pass filter; Voltage; Optics","score_opus":0.01576238450188121,"score_gpt":0.24814217838425948,"score_spread":0.23237979388237825,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3152795045","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.8168101,0.00068528194,0.1767541,0.00049992005,0.00041751354,0.00045035055,0.00024333604,0.00069310545,0.0034463247],"genre_scores_gemma":[0.9987787,0.000058146496,0.00022486187,0.00043129709,0.00006122329,0.00007534081,0.00006840719,0.00007066896,0.00023136502],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99823475,0.00003408455,0.00037642266,0.00040538528,0.00029557792,0.00065375876],"domain_scores_gemma":[0.9990017,0.00019735967,0.00004846822,0.0003495672,0.0001361298,0.00026679717],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.0000853635,0.00038357705,0.0004333169,0.00015308156,0.000155249,0.00022886961,0.00020063101,0.00021250476,0.0003314475],"category_scores_gemma":[0.0000072423773,0.00035985836,0.00019412808,0.0006242156,0.000057942034,0.0005456484,9.909106e-7,0.0006669031,0.00017172446],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.002249077,0.007474086,0.0008621396,0.0018758355,0.003330554,0.00073993695,0.0019940534,0.12795481,0.7178106,0.00021175462,0.0021842557,0.13331291],"study_design_scores_gemma":[0.0014295373,0.00032347563,0.00023177931,0.00014500506,0.0001021917,0.000017517965,0.00006895595,0.39199752,0.6015381,0.000037690435,0.0036381714,0.00047004092],"about_ca_topic_score_codex":0.000070371,"about_ca_topic_score_gemma":0.00040544523,"teacher_disagreement_score":0.2640427,"about_ca_system_score_codex":0.0002012556,"about_ca_system_score_gemma":0.00017531446,"threshold_uncertainty_score":0.9998853},"labels":[],"label_agreement":null},{"id":"W3162842780","doi":"10.1109/ted.2021.3078672","title":"Experimental Investigation of Thermal Actuation Crosstalk in Phase-Change RF Switches Using Transient Thermoreflectance Imaging","year":2021,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Phase-change materials and chalcogenides","field":"Materials Science","cited_by":19,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Materials science; Microheater; Thermal; Transient (computer programming); Radio frequency; Optoelectronics; Microfabrication; Transient response; Switching time; Multiphysics; Electronic engineering; Finite element method; Electrical engineering; Engineering; Computer science; Physics; Fabrication","score_opus":0.06177187295539421,"score_gpt":0.32782075692183743,"score_spread":0.2660488839664432,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3162842780","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.98966575,0.00104459,0.008467094,0.00011094205,0.00031243608,0.0002596579,0.00003824352,0.000058206355,0.00004306051],"genre_scores_gemma":[0.99923974,0.000028049035,0.0003511213,0.00017578751,0.0000698978,0.00008895081,0.0000098224655,0.000029727953,0.0000069014304],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9984793,0.00010763585,0.0003989442,0.00037422008,0.000280339,0.00035957535],"domain_scores_gemma":[0.99944735,0.00004867175,0.00016992204,0.00019595936,0.00007948309,0.000058595127],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00025217226,0.00021427928,0.00027074307,0.00014383552,0.00016331395,0.00008271409,0.00012938069,0.000066765075,0.00035630443],"category_scores_gemma":[0.0000026051127,0.00021102333,0.00008357162,0.0003135342,0.0000998994,0.0005889519,0.0000016493691,0.00010474082,0.0000072393045],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00015776488,0.000291096,0.000029288984,0.00003935329,0.000010774533,0.000007876284,0.0038486058,0.0007980805,0.9931212,0.000010164314,5.550281e-7,0.0016852333],"study_design_scores_gemma":[0.0009441369,0.00014030603,0.000405307,0.0001135545,0.000031011674,0.000016895608,0.0006254659,0.0020379566,0.9954069,0.00006909735,0.0000074466566,0.00020192596],"about_ca_topic_score_codex":0.00029021868,"about_ca_topic_score_gemma":0.0004619489,"teacher_disagreement_score":0.009573972,"about_ca_system_score_codex":0.00015277768,"about_ca_system_score_gemma":0.000105544794,"threshold_uncertainty_score":0.8605282},"labels":[],"label_agreement":null},{"id":"W3165122809","doi":"10.1109/ted.2021.3074104","title":"Modeling of Nonlinear Dynamics and Temperature Stability of Doped Silicon Microresonators","year":2021,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Mechanical and Optical Resonators","field":"Physics and Astronomy","cited_by":4,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Windsor","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Resonator; Nonlinear system; Vibration; Anharmonicity; Stability (learning theory); Materials science; Silicon; Physics; Mechanics; Control theory (sociology); Spring (device); Condensed matter physics; Optoelectronics; Acoustics; Computer science; Thermodynamics; Quantum mechanics","score_opus":0.008465453935184712,"score_gpt":0.23851201415874668,"score_spread":0.23004656022356196,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3165122809","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9726548,0.00017709674,0.026648855,0.00006533046,0.000042981,0.00010500758,0.00010046658,0.000010795392,0.00019464683],"genre_scores_gemma":[0.99930996,0.000024944018,0.00055820326,0.00001920557,0.000016408589,0.000009408477,0.0000115711155,0.00001116783,0.000039148945],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99910516,0.00004787282,0.00027797773,0.00023778157,0.00014885771,0.00018234133],"domain_scores_gemma":[0.99946916,0.00009562333,0.000049280086,0.00016999277,0.00013787377,0.00007806765],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00008728283,0.0001286713,0.0002552306,0.000038201757,0.000058815414,0.000012474088,0.00007745273,0.000068739115,0.00018235786],"category_scores_gemma":[0.0000030123263,0.00011273036,0.00011504517,0.0002091861,0.00004258219,0.000064305044,0.0000018809543,0.00026324898,0.0000011307534],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0006486954,0.0038712083,0.004782654,0.00072600425,0.0008507706,0.0000043523014,0.0005490389,0.020193359,0.81703275,0.049460184,0.000005162427,0.10187584],"study_design_scores_gemma":[0.00025809868,0.00012621061,0.00004248456,0.000032757347,0.000050949227,5.2106265e-7,0.00023450112,0.16952519,0.8290762,0.0005265298,0.000018644818,0.00010795981],"about_ca_topic_score_codex":0.00010863178,"about_ca_topic_score_gemma":0.0001909317,"teacher_disagreement_score":0.14933184,"about_ca_system_score_codex":0.000019300496,"about_ca_system_score_gemma":0.00008976133,"threshold_uncertainty_score":0.4597011},"labels":[],"label_agreement":null},{"id":"W3169700765","doi":"10.1109/ted.2021.3083602","title":"A Multiscale Simulation Framework for Steep-Slope Si Nanowire Cold Source FET","year":2021,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":11,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McGill University","funders":"Fonds de recherche du Québec – Nature et technologies; Natural Sciences and Engineering Research Council of Canada; National Natural Science Foundation of China","keywords":"Nanowire; Scaling; Benchmark (surveying); Multiscale modeling; Optoelectronics; MOSFET; Computation; Materials science; Transistor; Electronic engineering; Physics; Voltage; Computational physics; Computer science; Engineering; Quantum mechanics; Chemistry; Algorithm","score_opus":0.01898258309221668,"score_gpt":0.27304378055854284,"score_spread":0.25406119746632616,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3169700765","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.061567817,0.0010732292,0.93557805,0.000043461656,0.0006792605,0.00039625686,0.000043562504,0.00036858546,0.0002498044],"genre_scores_gemma":[0.9933568,0.0001234844,0.0048061395,0.00028009503,0.00012645137,0.00017241317,0.0000141178225,0.00008767492,0.0010327733],"study_design_codex":"simulation_or_modeling","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9986185,0.000035654186,0.00030238467,0.00035791085,0.00022627602,0.00045931744],"domain_scores_gemma":[0.9990641,0.00037571005,0.00005550337,0.00031587703,0.000100509606,0.00008832989],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.00008378649,0.0002615396,0.00025465366,0.00008226442,0.00023512242,0.00008372823,0.00016832617,0.00018579698,0.00015003477],"category_scores_gemma":[0.0000067238343,0.00029098536,0.00014130832,0.0003402174,0.000022679746,0.00028924923,5.597294e-7,0.00032646718,0.00003703113],"study_design_candidate":"simulation_or_modeling","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000025926305,0.00010958808,0.000020135245,0.00013799642,0.00015795187,0.0000024864933,0.0002447187,0.9133847,0.05376708,0.00027571837,0.000053432846,0.031820297],"study_design_scores_gemma":[0.00092437817,0.00021377952,0.000030296133,0.00018747468,0.0001676631,0.000007679596,0.00044225808,0.27468497,0.6395607,0.0005484125,0.08255144,0.0006809783],"about_ca_topic_score_codex":0.0000037378265,"about_ca_topic_score_gemma":0.00009721931,"teacher_disagreement_score":0.93178904,"about_ca_system_score_codex":0.00015304223,"about_ca_system_score_gemma":0.00003815656,"threshold_uncertainty_score":0.9999542},"labels":[],"label_agreement":null},{"id":"W3172021905","doi":"10.1109/ted.2021.3080225","title":"Performance Optimization of Monolayer 1T/1T’-2H MoX<sub>2</sub> Lateral Heterojunction Transistors","year":2021,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"2D Materials and Applications","field":"Materials Science","cited_by":3,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Natural Sciences and Engineering Research Council of Canada; Ontario Ministry of Research, Innovation and Science","keywords":"Heterojunction; Schottky barrier; Materials science; Optoelectronics; Field-effect transistor; Doping; Metal gate; Transistor; Physics; Nanotechnology; Topology (electrical circuits); Electrical engineering; Gate oxide; Quantum mechanics; Engineering","score_opus":0.009521083941529137,"score_gpt":0.21877572038051576,"score_spread":0.20925463643898662,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3172021905","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.898682,0.00008809628,0.09990767,0.00013351889,0.0005366448,0.00020611807,0.00003646561,0.00012919486,0.00028030135],"genre_scores_gemma":[0.99809885,0.00035562293,0.0011305116,0.00010429114,0.0000678401,0.00011416388,0.000019254028,0.000034679848,0.00007480801],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9984049,0.000093319984,0.00044932903,0.00042933883,0.0002710634,0.00035204264],"domain_scores_gemma":[0.99921644,0.000035759665,0.00016553626,0.00033877522,0.00016840402,0.00007511283],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00016285901,0.00022514311,0.00028152243,0.00012476047,0.0002703568,0.00007404817,0.00016208457,0.00012598607,0.00035760275],"category_scores_gemma":[0.0000017839111,0.00022399912,0.000119299504,0.0003690416,0.00005806869,0.00047141823,0.0000014988887,0.00014186813,0.00008246989],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000072652634,0.00017732236,0.000014066859,0.000061495564,0.000018268227,7.0171467e-7,0.000098833225,0.17537656,0.82324755,0.000027822978,0.000025841295,0.00087886106],"study_design_scores_gemma":[0.00034785215,0.00018038289,0.0001916785,0.000043306896,0.000079309255,0.000014834264,0.00003166222,0.011024215,0.9875517,0.000029176588,0.00028590014,0.0002200031],"about_ca_topic_score_codex":0.000046008518,"about_ca_topic_score_gemma":0.00014679847,"teacher_disagreement_score":0.16435234,"about_ca_system_score_codex":0.00009264735,"about_ca_system_score_gemma":0.000099721954,"threshold_uncertainty_score":0.9134419},"labels":[],"label_agreement":null},{"id":"W3185186685","doi":"10.1109/ted.2021.3096779","title":"A Surface Potential Model for Field-Effect Transistors With Bound-Charge Engineering","year":2021,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Semiconductor materials and devices","field":"Engineering","cited_by":4,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McGill University","funders":"Fonds de recherche du Québec – Nature et technologies; Natural Sciences and Engineering Research Council of Canada","keywords":"Nanowire; Transistor; Doping; Electrostatics; Materials science; Field-effect transistor; Semiconductor; Surface charge; Dopant; Silicon; Optoelectronics; Nanotechnology; Permittivity; Condensed matter physics; Physics; Dielectric; Quantum mechanics; Voltage","score_opus":0.007453721739730461,"score_gpt":0.21070939897482913,"score_spread":0.20325567723509866,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3185186685","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.62395155,0.00045785157,0.37456593,0.000044580564,0.00041859373,0.00018133195,0.000028790191,0.00028782382,0.000063555955],"genre_scores_gemma":[0.9982378,0.00008017167,0.0011581834,0.00007872819,0.00006370148,0.00007999477,0.000009371908,0.00007312793,0.00021892],"study_design_codex":"simulation_or_modeling","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9989524,0.000016960588,0.00019621877,0.00027488652,0.00015245902,0.00040709224],"domain_scores_gemma":[0.99955237,0.00009998312,0.000023023882,0.00019496206,0.00005095647,0.00007872464],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.00008173168,0.00026694205,0.00028384032,0.00006859317,0.000112667854,0.00009253675,0.00010266059,0.000118870215,0.0000859568],"category_scores_gemma":[0.0000015473734,0.00024847797,0.00013113594,0.00016566247,0.00000940571,0.00021611684,3.2539626e-7,0.00018667796,0.000009768293],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000070855116,0.000024419549,0.000002004161,0.00020078217,0.00011479771,0.000003747765,0.000091503796,0.5792446,0.41992286,0.000014833222,0.000049884373,0.00025968268],"study_design_scores_gemma":[0.00040633613,0.00017217625,0.000003025549,0.00003698661,0.000091286194,0.000017323186,0.0000090115145,0.3624854,0.636139,0.0000061206024,0.00041623518,0.00021712818],"about_ca_topic_score_codex":0.000018635907,"about_ca_topic_score_gemma":0.00019363273,"teacher_disagreement_score":0.37428626,"about_ca_system_score_codex":0.000068611436,"about_ca_system_score_gemma":0.00004953431,"threshold_uncertainty_score":0.9999967},"labels":[],"label_agreement":null},{"id":"W3186665451","doi":"10.1109/ted.2021.3096178","title":"Exploiting Fringing Fields Created by High-<i>κ</i>Gate Insulators to Enhance the Performance of Ultrascaled 2-D-Material-Based Transistors","year":2021,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Semiconductor materials and devices","field":"Engineering","cited_by":5,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Natural Sciences and Engineering Research Council of Canada; Ontario Ministry of Research, Innovation and Science","keywords":"Quantum tunnelling; Leakage (economics); Optoelectronics; Time-dependent gate oxide breakdown; Materials science; Transistor; MOSFET; Gate oxide; Electrical engineering; Logic gate; Electronic engineering; Engineering; Voltage","score_opus":0.004644020142653645,"score_gpt":0.20803347394883048,"score_spread":0.20338945380617685,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3186665451","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9860948,0.00026822422,0.012238795,0.00011305478,0.0007172509,0.00017210684,0.00006148347,0.00025614517,0.000078192315],"genre_scores_gemma":[0.99924904,0.00012213967,0.00016090822,0.0002392234,0.00004998195,0.00007332165,0.000013402932,0.000051391777,0.00004061797],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9986115,0.00006161741,0.00043220547,0.00027942637,0.00021657611,0.0003986615],"domain_scores_gemma":[0.9993604,0.00012217872,0.00006721089,0.00029632606,0.000075278316,0.00007860022],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00014813733,0.00026020865,0.00032202058,0.00010319944,0.00017242417,0.000068387926,0.00020790502,0.00010827403,0.0002208222],"category_scores_gemma":[0.0000037879192,0.00022589424,0.00009269294,0.00044418237,0.000029687646,0.00019354727,8.2842814e-7,0.00020239012,0.000012377934],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000044213637,0.000040049723,0.000025173815,0.00016508762,0.00006471011,0.0000011692621,0.00027317434,0.15293019,0.8457358,0.000002615152,0.000028389106,0.00068943005],"study_design_scores_gemma":[0.0001769951,0.000116156356,0.00011953364,0.0001496369,0.000056244295,0.0000030592685,0.00009886293,0.0038854938,0.9947236,0.0000030064002,0.0004162892,0.00025108203],"about_ca_topic_score_codex":0.00013602652,"about_ca_topic_score_gemma":0.00017121871,"teacher_disagreement_score":0.14904469,"about_ca_system_score_codex":0.00006571316,"about_ca_system_score_gemma":0.000041214676,"threshold_uncertainty_score":0.92117},"labels":[],"label_agreement":null},{"id":"W3200713636","doi":"10.1109/ted.2021.3108125","title":"Feedback Stabilization of a Negative-Capacitance Ferroelectric and its Application to Improve the <i>f</i> <sub>T</sub> of a MOSFET","year":2021,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Ferroelectric and Negative Capacitance Devices","field":"Engineering","cited_by":5,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Alberta","funders":"Natural Sciences and Engineering Research Council of Canada; Alberta Innovates; University of Alberta","keywords":"Negative impedance converter; Capacitance; Ferroelectricity; MOSFET; Transistor; Field-effect transistor; Electrical engineering; Materials science; Optoelectronics; Physics; Electronic engineering; Voltage; Engineering; Quantum mechanics; Voltage source; Electrode; Dielectric","score_opus":0.006737274887353541,"score_gpt":0.20624198198003163,"score_spread":0.1995047070926781,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3200713636","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.7992312,0.0017597936,0.19797122,0.00014072782,0.00008736605,0.0005064047,0.000051967665,0.00007627653,0.00017504924],"genre_scores_gemma":[0.9983805,0.0010889965,0.00015230785,0.00010393167,0.000022688559,0.00018943663,0.0000039295683,0.000035913163,0.000022340077],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9986379,0.00008327454,0.00038403764,0.0003215586,0.00025679037,0.00031640087],"domain_scores_gemma":[0.9989433,0.00028024783,0.00011804964,0.00025983786,0.0003278145,0.00007070341],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00014947788,0.000232375,0.00031253378,0.00015800717,0.00010902682,0.000018586838,0.00015534995,0.00009196836,0.0000075665953],"category_scores_gemma":[0.00002227614,0.00020637045,0.000079638216,0.0016773541,0.00005417789,0.00023351888,9.756943e-7,0.00026813924,0.000007694857],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00006841024,0.00007146553,0.000013290823,0.00020480857,0.0000939954,3.3946228e-7,0.00056989945,0.012680827,0.96369576,0.00023285732,0.000021506621,0.022346832],"study_design_scores_gemma":[0.00031028513,0.00024816568,0.00034495958,0.000057801793,0.00006791607,0.0000054357292,0.0001856204,0.02338241,0.97487974,0.00025313016,0.00007897214,0.00018554556],"about_ca_topic_score_codex":0.000006389618,"about_ca_topic_score_gemma":0.0003338032,"teacher_disagreement_score":0.19914927,"about_ca_system_score_codex":0.00009508807,"about_ca_system_score_gemma":0.00006707592,"threshold_uncertainty_score":0.8415542},"labels":[],"label_agreement":null},{"id":"W3202956879","doi":"10.1109/ted.2021.3105948","title":"A Novel IGBT With Voltage-Clamping for Turn-on Overshoot Suppression Under Hard-Switching","year":2021,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Silicon Carbide Semiconductor Technologies","field":"Engineering","cited_by":7,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Toronto","funders":"Sichuan Province Science and Technology Support Program; China Scholarship Council","keywords":"Insulated-gate bipolar transistor; Electrical engineering; Topology (electrical circuits); Computer science; Physics; Algorithm; Voltage; Engineering","score_opus":0.02108421978554947,"score_gpt":0.243694003316967,"score_spread":0.22260978353141753,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3202956879","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.6413574,0.00024265281,0.35638016,0.00019005363,0.00041950264,0.00025905395,0.000031275318,0.0009610033,0.00015887531],"genre_scores_gemma":[0.99782234,0.000065291766,0.0013701647,0.00024129868,0.00005765533,0.00013919531,0.000007841868,0.000097592485,0.00019859246],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9985617,0.000014147697,0.00023009378,0.0004376879,0.00023836586,0.0005180015],"domain_scores_gemma":[0.9991447,0.00025034117,0.00004982772,0.00041580974,0.00007517755,0.00006418678],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.00007685803,0.0003224453,0.00028163797,0.00023048099,0.00017978206,0.0000963005,0.00020289874,0.0002016026,0.000046418678],"category_scores_gemma":[0.000009935685,0.00029569076,0.00013217719,0.00037201634,0.000028643117,0.00024395113,0.0000013569756,0.0005872496,0.000011174394],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00006448999,0.00006602896,0.000013708968,0.00008669946,0.00015535987,0.0000033326094,0.00009609107,0.07711307,0.91755,0.00011336955,0.00009774483,0.004640075],"study_design_scores_gemma":[0.00085401005,0.00021704898,0.0001692254,0.0002064419,0.00007008525,0.00004086416,0.0004462107,0.01766377,0.97911936,0.00011046567,0.0007258782,0.000376622],"about_ca_topic_score_codex":0.000021504791,"about_ca_topic_score_gemma":0.00043646892,"teacher_disagreement_score":0.35646495,"about_ca_system_score_codex":0.00023471378,"about_ca_system_score_gemma":0.00006595562,"threshold_uncertainty_score":0.9999495},"labels":[],"label_agreement":null},{"id":"W3210132513","doi":"10.1109/ted.2021.3120970","title":"Simulation Study of a <i>p</i>-GaN HEMT With an Integrated Schottky Barrier Diode","year":2021,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":9,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Toronto","funders":"Fundamental Research Funds for the Central Universities; China Scholarship Council; National Natural Science Foundation of China","keywords":"High-electron-mobility transistor; Schottky diode; Notation; Diode; Topology (electrical circuits); Electrical engineering; Materials science; Mathematics; Physics; Optoelectronics; Transistor; Engineering; Voltage; Arithmetic","score_opus":0.013544098960112758,"score_gpt":0.26772550396914047,"score_spread":0.2541814050090277,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3210132513","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9656065,0.000023314393,0.033600774,0.0000143011375,0.00012315232,0.0003048602,0.00006907722,0.000053199426,0.00020479756],"genre_scores_gemma":[0.9994078,0.0000014474269,0.0001652147,0.00005231257,0.000056256675,0.000050325158,0.00004032117,0.000033925033,0.00019238213],"study_design_codex":"simulation_or_modeling","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.998674,0.00015182838,0.0003108828,0.00037272082,0.00022271,0.00026790117],"domain_scores_gemma":[0.9990878,0.00008158636,0.00014397396,0.00035516973,0.00023473069,0.00009672091],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000097918244,0.00022938842,0.00031315407,0.00009977237,0.00015396951,0.000081521386,0.0001318698,0.000046497422,0.0006990264],"category_scores_gemma":[9.59909e-7,0.0001915301,0.00007068686,0.00036803575,0.000025855785,0.00033645867,6.443051e-7,0.00020977088,0.000009057149],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0008543228,0.0066233696,0.006172434,0.00009110177,0.001059823,0.00001205811,0.002695852,0.5182825,0.45208886,0.00015334274,0.00001107262,0.011955304],"study_design_scores_gemma":[0.0017595366,0.0018316393,0.0006600687,0.00006220591,0.00028538986,0.0000015507223,0.004322925,0.004701799,0.98525417,0.000066042936,0.00069101434,0.00036365126],"about_ca_topic_score_codex":0.000653124,"about_ca_topic_score_gemma":0.0011458105,"teacher_disagreement_score":0.53316534,"about_ca_system_score_codex":0.00002777428,"about_ca_system_score_gemma":0.00016137084,"threshold_uncertainty_score":0.7810371},"labels":[],"label_agreement":null},{"id":"W3217347057","doi":"10.1109/ted.2021.3124475","title":"Simulation of Negative Capacitance Based on the Miller Model: Beyond the Limitation of the Landau Model","year":2021,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Ferroelectric and Negative Capacitance Devices","field":"Engineering","cited_by":11,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Natural Sciences and Engineering Research Council of Canada; Canada First Research Excellence Fund; Compute Canada","keywords":"Capacitor; Ferroelectricity; Capacitance; Dielectric; Polarization (electrochemistry); Electric field; Physics; Condensed matter physics; Materials science; Mathematical physics; Topology (electrical circuits); Voltage; Mathematics; Quantum mechanics; Chemistry; Electrode; Combinatorics; Physical chemistry","score_opus":0.018658691889598282,"score_gpt":0.22835332759447696,"score_spread":0.20969463570487867,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3217347057","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.3956641,0.00032226607,0.6007175,0.0010487038,0.00011951584,0.00035011233,0.00006511928,0.000055229062,0.0016574779],"genre_scores_gemma":[0.9989334,0.00007115142,0.00024129635,0.00051173655,0.000014253108,0.000056519948,0.000002652345,0.000026382908,0.00014263586],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99886966,0.00012281028,0.00027077756,0.0001763299,0.00034838272,0.00021206452],"domain_scores_gemma":[0.99814737,0.0011284858,0.0001143743,0.0003527634,0.00023539567,0.000021584467],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00016335303,0.00018468867,0.00018625286,0.00006570417,0.0002045045,0.000016685393,0.00021890737,0.00007730513,0.00001729986],"category_scores_gemma":[0.000029630082,0.000105444786,0.00015134452,0.00065888953,0.00009106215,0.00013971733,5.064405e-7,0.00036418886,0.0000029204045],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000042580425,0.000046121226,0.000007247023,0.000035152276,0.00006310791,9.897734e-8,0.0009339063,0.98489565,0.013001311,0.00042628564,0.00008021223,0.00046834946],"study_design_scores_gemma":[0.00016129446,0.00004152693,0.000060532126,0.000043338296,0.000044827942,2.1887624e-7,0.00015588374,0.687277,0.31120467,0.0009147784,0.000017623308,0.0000783135],"about_ca_topic_score_codex":0.00000543417,"about_ca_topic_score_gemma":0.00032088053,"teacher_disagreement_score":0.6032693,"about_ca_system_score_codex":0.0000845933,"about_ca_system_score_gemma":0.00009204563,"threshold_uncertainty_score":0.42999136},"labels":[],"label_agreement":null},{"id":"W4210250784","doi":"10.1109/ted.2022.3144122","title":"Multiport Relativistic Magnetron for Phased Array Application","year":2022,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Gyrotron and Vacuum Electronics Research","field":"Physics and Astronomy","cited_by":8,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Calgary","funders":"National Natural Science Foundation of China","keywords":"Phase shift module; Physics; Phased array; Electrical engineering; Power (physics); Phase (matter); Microwave; Electronic engineering; Amplitude; Engineering; Topology (electrical circuits); Antenna (radio); Optics","score_opus":0.01511151765416053,"score_gpt":0.30253795815131274,"score_spread":0.2874264404971522,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4210250784","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.036545735,0.00010007451,0.958222,0.00036935872,0.00012685942,0.0012258766,0.00014918599,0.00009542345,0.003165504],"genre_scores_gemma":[0.99160904,0.0000031114537,0.00032465236,0.000064411484,0.00008629652,0.003162527,0.00008377703,0.000046929872,0.0046192296],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99823266,0.0000935019,0.00026107123,0.00044738743,0.00034798114,0.000617395],"domain_scores_gemma":[0.9992517,0.00016094877,0.00011130481,0.0003096572,0.00006777388,0.000098596916],"candidate_categories":["insufficient_payload"],"consensus_categories":[],"category_scores_codex":[0.00027647454,0.00021194963,0.00020281824,0.00019701278,0.0008552337,0.00004519388,0.00028105231,0.00003223067,0.0009830679],"category_scores_gemma":[9.032043e-7,0.0002280857,0.00019116935,0.0003914934,0.000029481409,0.000117532196,8.772133e-7,0.0006017834,0.000046765294],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.001734033,0.005107347,0.0013237343,0.00012176219,0.0008299809,0.0000010259853,0.0005930501,0.042643897,0.6835785,0.030455966,0.0016034901,0.23200722],"study_design_scores_gemma":[0.00510824,0.0037544188,0.0003855966,0.000011999443,0.00025177895,0.0000059511785,0.0005014812,0.021214925,0.70609856,0.0074057085,0.25419152,0.0010697963],"about_ca_topic_score_codex":0.0001289599,"about_ca_topic_score_gemma":0.000046670943,"teacher_disagreement_score":0.9578973,"about_ca_system_score_codex":0.0002171691,"about_ca_system_score_gemma":0.00019168959,"threshold_uncertainty_score":0.99993014},"labels":[],"label_agreement":null},{"id":"W4221154635","doi":"10.1109/ted.2023.3244133","title":"Memristor-Based Cryogenic Programmable DC Sources for Scalable In Situ Quantum-Dot Control","year":2023,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Advanced Memory and Neural Computing","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Institut interdisciplinaire d'innovation technologique; Université de Sherbrooke","funders":"Fonds de recherche du Québec – Nature et technologies; École Centrale de Lyon; Institut National des Sciences Appliquées de Lyon; Canada First Research Excellence Fund; Natural Science Foundation of Beijing Municipality; Centre National de la Recherche Scientifique; Natural Sciences and Engineering Research Council of Canada; Université de Sherbrooke; Indian National Science Academy","keywords":"Memristor; Quantum dot; Cryostat; Optoelectronics; Computer science; Scalability; Voltage; Biasing; Physics; Electrical engineering; Materials science; Nanotechnology; Electronic engineering; Engineering; Superconductivity; Condensed matter physics","score_opus":0.016095747478171957,"score_gpt":0.2528493248458857,"score_spread":0.2367535773677137,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4221154635","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.76373214,0.00033047676,0.23390041,0.00011110499,0.00028657087,0.00057115924,0.000011023374,0.0009850347,0.00007208516],"genre_scores_gemma":[0.99902904,0.00003130079,0.0002580093,0.00007997226,0.000051904713,0.0003030764,0.0000064384335,0.000056141133,0.0001841449],"study_design_codex":"simulation_or_modeling","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.998646,0.000034156506,0.00026499745,0.00027837444,0.00013743914,0.00063902244],"domain_scores_gemma":[0.9993899,0.00030427473,0.000038593553,0.00016628733,0.000029616558,0.00007133433],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00019793893,0.00021684208,0.00025469458,0.00027285458,0.00020063792,0.000038056525,0.0001500649,0.000084235064,0.000011781764],"category_scores_gemma":[0.000004456812,0.00022617615,0.00012991716,0.0006537965,0.00002395338,0.00017372935,3.9110563e-7,0.00028973186,0.00004392989],"study_design_candidate":"simulation_or_modeling","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000109874185,0.000045576602,0.0000187881,0.00012041304,0.00003241592,0.0000036850854,0.00004852953,0.792697,0.20228063,0.000015256334,0.00003705734,0.004590752],"study_design_scores_gemma":[0.0013074466,0.00028770644,0.00006455305,0.000056326404,0.000040089173,0.000002657144,0.000050333492,0.24759418,0.7469179,0.0001420693,0.003250025,0.000286715],"about_ca_topic_score_codex":0.000011209743,"about_ca_topic_score_gemma":0.00044875182,"teacher_disagreement_score":0.54510283,"about_ca_system_score_codex":0.00011658361,"about_ca_system_score_gemma":0.000033582714,"threshold_uncertainty_score":0.9223196},"labels":[],"label_agreement":null},{"id":"W4226377161","doi":"10.1109/ted.2022.3157569","title":"p-GaN Gate HEMTs With 10.6 V Maximum Gate Drive Voltages by Mg Doping Engineering","year":2022,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":34,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of British Columbia","funders":"Shenzhen Municipal Science and Technology Innovation Council; Guangdong Science and Technology Department","keywords":"Materials science; Optoelectronics; Breakdown voltage; Gallium nitride; Metalorganic vapour phase epitaxy; High-electron-mobility transistor; Time-dependent gate oxide breakdown; Doping; Schottky barrier; Threshold voltage; Gate oxide; Metal gate; Schottky diode; Chemical vapor deposition; Voltage; Electrical engineering; Transistor; Layer (electronics); Nanotechnology; Diode","score_opus":0.005658677762146294,"score_gpt":0.2076509634686049,"score_spread":0.2019922857064586,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4226377161","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9650439,0.00014689514,0.032793798,0.00019725942,0.0003663716,0.0003613048,0.0002698367,0.0001788816,0.0006417278],"genre_scores_gemma":[0.9978816,0.000008525931,0.00010756492,0.00011925808,0.00009605608,0.00025043977,0.00006637116,0.00006641745,0.0014037978],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99839336,0.0000605997,0.00026852477,0.00043510352,0.0002735502,0.0005688877],"domain_scores_gemma":[0.9993779,0.000057838723,0.00014484803,0.00026642904,0.000042896427,0.00011009722],"candidate_categories":["metaepi_narrow","insufficient_payload"],"consensus_categories":[],"category_scores_codex":[0.00012205315,0.00032462945,0.00030094685,0.00013743917,0.00046009416,0.00011406095,0.00025126964,0.000034358218,0.0027948974],"category_scores_gemma":[2.6836884e-7,0.00031198352,0.000113603295,0.00028761404,0.000025171777,0.00023475848,0.0000027188726,0.00037260828,0.00004511003],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0002600055,0.0005021854,0.00031429582,0.00013050369,0.00066555204,0.000011127848,0.0006257738,0.25408837,0.7381028,0.0002207872,0.0009975259,0.00408108],"study_design_scores_gemma":[0.0012387442,0.00072977116,0.000072763665,0.000070532085,0.00018686918,0.000010853713,0.0006195227,0.0035323785,0.9473982,0.000104181665,0.04522751,0.00080867484],"about_ca_topic_score_codex":0.000357261,"about_ca_topic_score_gemma":0.000039829163,"teacher_disagreement_score":0.250556,"about_ca_system_score_codex":0.000091807895,"about_ca_system_score_gemma":0.000072624556,"threshold_uncertainty_score":0.99993324},"labels":[],"label_agreement":null},{"id":"W4235915783","doi":"10.1109/ted.2014.2349674","title":"IEEE Transactions on Electron Devices publication information","year":2014,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Advanced Semiconductor Detectors and Materials","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Canadian Standards Association","funders":"","keywords":"Computer science; Electron; Optoelectronics; Electrical engineering; Materials science; Physics; Engineering; Nuclear physics","score_opus":0.007932666103285978,"score_gpt":0.22390162824741944,"score_spread":0.21596896214413347,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4235915783","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.29674166,0.00006722443,0.6994745,0.000097040276,0.0011164563,0.00040609547,0.000048966096,0.0009673337,0.0010806952],"genre_scores_gemma":[0.9983716,0.00018850245,0.00035320382,0.00042389033,0.000114125374,0.00023078555,0.000028278164,0.00006919989,0.00022040214],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99807733,0.00007857453,0.00055278046,0.0003167943,0.00033604974,0.000638475],"domain_scores_gemma":[0.9990357,0.00012711591,0.00013777426,0.0004183155,0.0001304253,0.00015065013],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.00022090453,0.0004145415,0.00033891894,0.00047002753,0.00031889195,0.00019969454,0.00026901052,0.00023056871,0.00024010763],"category_scores_gemma":[0.000004469946,0.0004165187,0.00014676555,0.00047887428,0.000035599092,0.0017324572,2.1889629e-7,0.00049401505,0.00039095062],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00019840499,0.0002279462,0.00000370396,0.00031851433,0.00026572644,4.857025e-7,0.0005281797,0.2974763,0.57665867,0.0002074728,0.0006068287,0.12350777],"study_design_scores_gemma":[0.0004930198,0.00043748046,0.000048636906,0.000046121702,0.000079865,0.000009770061,0.000034951496,0.012964571,0.95830935,0.00012032153,0.02696732,0.00048860826],"about_ca_topic_score_codex":0.00004107242,"about_ca_topic_score_gemma":0.00036066593,"teacher_disagreement_score":0.70162994,"about_ca_system_score_codex":0.00028834082,"about_ca_system_score_gemma":0.00004153671,"threshold_uncertainty_score":0.99982864},"labels":[],"label_agreement":null},{"id":"W4240571505","doi":"10.1109/ted.2014.2312678","title":"IEEE Transactions on Electron Devices publication information","year":2014,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Advanced Semiconductor Detectors and Materials","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Canadian Standards Association","funders":"","keywords":"Computer science; Electron; Optoelectronics; Electrical engineering; World Wide Web; Materials science; Physics; Engineering; Nuclear physics","score_opus":0.007932666103285978,"score_gpt":0.22390162824741944,"score_spread":0.21596896214413347,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4240571505","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.29674166,0.00006722443,0.6994745,0.000097040276,0.0011164563,0.00040609547,0.000048966096,0.0009673337,0.0010806952],"genre_scores_gemma":[0.9983716,0.00018850245,0.00035320382,0.00042389033,0.000114125374,0.00023078555,0.000028278164,0.00006919989,0.00022040214],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99807733,0.00007857453,0.00055278046,0.0003167943,0.00033604974,0.000638475],"domain_scores_gemma":[0.9990357,0.00012711591,0.00013777426,0.0004183155,0.0001304253,0.00015065013],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.00022090453,0.0004145415,0.00033891894,0.00047002753,0.00031889195,0.00019969454,0.00026901052,0.00023056871,0.00024010763],"category_scores_gemma":[0.000004469946,0.0004165187,0.00014676555,0.00047887428,0.000035599092,0.0017324572,2.1889629e-7,0.00049401505,0.00039095062],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00019840499,0.0002279462,0.00000370396,0.00031851433,0.00026572644,4.857025e-7,0.0005281797,0.2974763,0.57665867,0.0002074728,0.0006068287,0.12350777],"study_design_scores_gemma":[0.0004930198,0.00043748046,0.000048636906,0.000046121702,0.000079865,0.000009770061,0.000034951496,0.012964571,0.95830935,0.00012032153,0.02696732,0.00048860826],"about_ca_topic_score_codex":0.00004107242,"about_ca_topic_score_gemma":0.00036066593,"teacher_disagreement_score":0.70162994,"about_ca_system_score_codex":0.00028834082,"about_ca_system_score_gemma":0.00004153671,"threshold_uncertainty_score":0.99982864},"labels":[],"label_agreement":null},{"id":"W4243889160","doi":"10.1109/ted.2014.2340637","title":"IEEE Transactions on Electron Devices publication information","year":2014,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Advanced Semiconductor Detectors and Materials","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Canadian Standards Association","funders":"","keywords":"Computer science; World Wide Web; Electrical engineering; Optoelectronics; Materials science; Engineering","score_opus":0.007932666103285978,"score_gpt":0.22390162824741944,"score_spread":0.21596896214413347,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4243889160","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.29674166,0.00006722443,0.6994745,0.000097040276,0.0011164563,0.00040609547,0.000048966096,0.0009673337,0.0010806952],"genre_scores_gemma":[0.9983716,0.00018850245,0.00035320382,0.00042389033,0.000114125374,0.00023078555,0.000028278164,0.00006919989,0.00022040214],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99807733,0.00007857453,0.00055278046,0.0003167943,0.00033604974,0.000638475],"domain_scores_gemma":[0.9990357,0.00012711591,0.00013777426,0.0004183155,0.0001304253,0.00015065013],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.00022090453,0.0004145415,0.00033891894,0.00047002753,0.00031889195,0.00019969454,0.00026901052,0.00023056871,0.00024010763],"category_scores_gemma":[0.000004469946,0.0004165187,0.00014676555,0.00047887428,0.000035599092,0.0017324572,2.1889629e-7,0.00049401505,0.00039095062],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00019840499,0.0002279462,0.00000370396,0.00031851433,0.00026572644,4.857025e-7,0.0005281797,0.2974763,0.57665867,0.0002074728,0.0006068287,0.12350777],"study_design_scores_gemma":[0.0004930198,0.00043748046,0.000048636906,0.000046121702,0.000079865,0.000009770061,0.000034951496,0.012964571,0.95830935,0.00012032153,0.02696732,0.00048860826],"about_ca_topic_score_codex":0.00004107242,"about_ca_topic_score_gemma":0.00036066593,"teacher_disagreement_score":0.70162994,"about_ca_system_score_codex":0.00028834082,"about_ca_system_score_gemma":0.00004153671,"threshold_uncertainty_score":0.99982864},"labels":[],"label_agreement":null},{"id":"W4247084630","doi":"10.1109/ted.2011.2149530","title":"RF Performance Potential of Array-Based Carbon-Nanotube Transistors—Part II: Extrinsic Results","year":2011,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Carbon Nanotubes in Composites","field":"Materials Science","cited_by":16,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Alberta","funders":"","keywords":"Transistor; CMOS; Benchmark (surveying); Figure of merit; Radio frequency; Electrical engineering; Field-effect transistor; Power (physics); Computer science; Materials science; Physics; Optoelectronics; Engineering; Quantum mechanics","score_opus":0.016865342653280047,"score_gpt":0.22059167976242391,"score_spread":0.20372633710914387,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4247084630","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9872305,0.00020376891,0.007993534,0.000099389435,0.001410366,0.00032988086,0.000078132885,0.00023016168,0.0024243135],"genre_scores_gemma":[0.9983882,0.000051975185,0.0009970927,0.00009179502,0.00008947239,0.000061785664,0.0000049370915,0.00004659563,0.00026815422],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9973564,0.00010100959,0.000729507,0.000626122,0.0005719085,0.00061504875],"domain_scores_gemma":[0.99866235,0.00010499204,0.00025779862,0.0006911734,0.00015934616,0.00012435541],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.00039522338,0.00035889627,0.0004374769,0.00034343696,0.00031205371,0.000029517612,0.00053558516,0.00017076118,0.00029204562],"category_scores_gemma":[0.000004952742,0.00035164363,0.00023509783,0.0005059766,0.00023669685,0.00026948212,0.0000019904899,0.00031433048,0.000035245142],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0014554822,0.00054265646,0.000031557956,0.000081544764,0.000037566442,0.0000046198197,0.00049585116,0.0044322745,0.991604,0.000011454022,0.000025441914,0.0012775807],"study_design_scores_gemma":[0.0011199265,0.0013037669,0.00029615615,0.00010363067,0.00014940536,0.000014359286,0.000025664007,0.0012939267,0.9947581,0.000015859638,0.0005531169,0.00036608762],"about_ca_topic_score_codex":0.00037872896,"about_ca_topic_score_gemma":0.00041278583,"teacher_disagreement_score":0.01115774,"about_ca_system_score_codex":0.00014108764,"about_ca_system_score_gemma":0.00022650637,"threshold_uncertainty_score":0.99989355},"labels":[],"label_agreement":null},{"id":"W4250059894","doi":"10.1109/ted.2014.2323832","title":"IEEE Transactions on Electron Devices publication information","year":2014,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Advanced Semiconductor Detectors and Materials","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Canadian Standards Association","funders":"","keywords":"Computer science; Electrical engineering; Optoelectronics; World Wide Web; Materials science; Engineering","score_opus":0.007932666103285978,"score_gpt":0.22390162824741944,"score_spread":0.21596896214413347,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4250059894","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.29674166,0.00006722443,0.6994745,0.000097040276,0.0011164563,0.00040609547,0.000048966096,0.0009673337,0.0010806952],"genre_scores_gemma":[0.9983716,0.00018850245,0.00035320382,0.00042389033,0.000114125374,0.00023078555,0.000028278164,0.00006919989,0.00022040214],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99807733,0.00007857453,0.00055278046,0.0003167943,0.00033604974,0.000638475],"domain_scores_gemma":[0.9990357,0.00012711591,0.00013777426,0.0004183155,0.0001304253,0.00015065013],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.00022090453,0.0004145415,0.00033891894,0.00047002753,0.00031889195,0.00019969454,0.00026901052,0.00023056871,0.00024010763],"category_scores_gemma":[0.000004469946,0.0004165187,0.00014676555,0.00047887428,0.000035599092,0.0017324572,2.1889629e-7,0.00049401505,0.00039095062],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00019840499,0.0002279462,0.00000370396,0.00031851433,0.00026572644,4.857025e-7,0.0005281797,0.2974763,0.57665867,0.0002074728,0.0006068287,0.12350777],"study_design_scores_gemma":[0.0004930198,0.00043748046,0.000048636906,0.000046121702,0.000079865,0.000009770061,0.000034951496,0.012964571,0.95830935,0.00012032153,0.02696732,0.00048860826],"about_ca_topic_score_codex":0.00004107242,"about_ca_topic_score_gemma":0.00036066593,"teacher_disagreement_score":0.70162994,"about_ca_system_score_codex":0.00028834082,"about_ca_system_score_gemma":0.00004153671,"threshold_uncertainty_score":0.99982864},"labels":[],"label_agreement":null},{"id":"W4251162858","doi":"10.1109/ted.2014.2318245","title":"IEEE Transactions on Electron Devices publication information","year":2014,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Advanced Semiconductor Detectors and Materials","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Canadian Standards Association","funders":"","keywords":"Computer science; Electron; Materials science; Optoelectronics; Electrical engineering; World Wide Web; Physics; Engineering; Nuclear physics","score_opus":0.007932666103285978,"score_gpt":0.22390162824741944,"score_spread":0.21596896214413347,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4251162858","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.29674166,0.00006722443,0.6994745,0.000097040276,0.0011164563,0.00040609547,0.000048966096,0.0009673337,0.0010806952],"genre_scores_gemma":[0.9983716,0.00018850245,0.00035320382,0.00042389033,0.000114125374,0.00023078555,0.000028278164,0.00006919989,0.00022040214],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99807733,0.00007857453,0.00055278046,0.0003167943,0.00033604974,0.000638475],"domain_scores_gemma":[0.9990357,0.00012711591,0.00013777426,0.0004183155,0.0001304253,0.00015065013],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.00022090453,0.0004145415,0.00033891894,0.00047002753,0.00031889195,0.00019969454,0.00026901052,0.00023056871,0.00024010763],"category_scores_gemma":[0.000004469946,0.0004165187,0.00014676555,0.00047887428,0.000035599092,0.0017324572,2.1889629e-7,0.00049401505,0.00039095062],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00019840499,0.0002279462,0.00000370396,0.00031851433,0.00026572644,4.857025e-7,0.0005281797,0.2974763,0.57665867,0.0002074728,0.0006068287,0.12350777],"study_design_scores_gemma":[0.0004930198,0.00043748046,0.000048636906,0.000046121702,0.000079865,0.000009770061,0.000034951496,0.012964571,0.95830935,0.00012032153,0.02696732,0.00048860826],"about_ca_topic_score_codex":0.00004107242,"about_ca_topic_score_gemma":0.00036066593,"teacher_disagreement_score":0.70162994,"about_ca_system_score_codex":0.00028834082,"about_ca_system_score_gemma":0.00004153671,"threshold_uncertainty_score":0.99982864},"labels":[],"label_agreement":null},{"id":"W4285506404","doi":"10.1109/ted.2022.3187374","title":"Potential Enhancement of <i>f<sub>T</sub> </i> and <i>gₘf<sub>T</sub> </i>/<i>I<sub>D</sub> </i> via the Use of NCFETs to Mitigate the Impact of Extrinsic Parasitics","year":2022,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Ferroelectric and Negative Capacitance Devices","field":"Engineering","cited_by":3,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Alberta","funders":"Natural Sciences and Engineering Research Council of Canada; Alberta Innovates","keywords":"Notation; Mathematics; Discrete mathematics; Algebra over a field; Arithmetic; Pure mathematics","score_opus":0.011522954887317369,"score_gpt":0.22084720473346606,"score_spread":0.2093242498461487,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4285506404","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.95228904,0.0014324784,0.044468686,0.00015523836,0.00028625704,0.0009716064,0.00025566798,0.00009937089,0.000041674575],"genre_scores_gemma":[0.997608,0.001707622,0.000049563612,0.0002028323,0.000056145756,0.00025992727,0.000014000646,0.000094507646,0.0000073822466],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9966306,0.0003198308,0.0009088069,0.0005125992,0.00078579824,0.00084235787],"domain_scores_gemma":[0.99803925,0.00053224585,0.00037570554,0.00064373866,0.00023523948,0.00017383174],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.0004267741,0.00058437645,0.0007158434,0.00035944884,0.00046059553,0.00005563117,0.0005001942,0.00012950825,0.000023482306],"category_scores_gemma":[0.000012537938,0.00045861411,0.00044290896,0.0014360656,0.00027050957,0.00040104764,0.000012866603,0.000836887,0.00001136976],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00032616092,0.0002374617,0.000032372078,0.00012910845,0.00050803425,0.0000045209194,0.0006362495,0.12709036,0.84638363,0.000016901884,0.00026771578,0.024367472],"study_design_scores_gemma":[0.0006579643,0.0014532731,0.0011101454,0.00009012692,0.00034016694,0.000039383503,0.00016561814,0.011097629,0.98436743,0.00006979115,0.00017755202,0.00043094673],"about_ca_topic_score_codex":0.00007084684,"about_ca_topic_score_gemma":0.00030982483,"teacher_disagreement_score":0.13798377,"about_ca_system_score_codex":0.00027579546,"about_ca_system_score_gemma":0.00015151687,"threshold_uncertainty_score":0.99978656},"labels":[],"label_agreement":null},{"id":"W4286371761","doi":"10.1109/ted.2022.3190464","title":"Extended Scale Length Theory for Low-Dimensional Field-Effect Transistors","year":2022,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Semiconductor materials and devices","field":"Engineering","cited_by":16,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"National Institute for Nanotechnology; University of Waterloo","funders":"Natural Sciences and Engineering Research Council of Canada; Defense Advanced Research Projects Agency; Advanced Research Projects Agency; National Science Foundation; Stanford SystemX Alliance; Compute Canada; U.S. Department of Energy","keywords":"Field-effect transistor; Length scale; Transistor; Channel (broadcasting); MOSFET; Materials science; Optoelectronics; Electronic engineering; Nanotechnology; Topology (electrical circuits); Mathematics; Electrical engineering; Physics; Engineering; Quantum mechanics","score_opus":0.005504355531876211,"score_gpt":0.21926677068817477,"score_spread":0.21376241515629857,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4286371761","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.97816586,0.0007412417,0.017928438,0.00007301111,0.0017844812,0.00046315917,0.000090349014,0.00043791914,0.00031550828],"genre_scores_gemma":[0.9986927,0.0000218838,0.0001215825,0.0003006955,0.00008202836,0.00051016005,0.000013081994,0.00005786084,0.00019999941],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9987882,0.00010824365,0.00023464253,0.00027548146,0.00021852703,0.00037493723],"domain_scores_gemma":[0.99927574,0.00040069298,0.000033378175,0.00020162945,0.000021435979,0.00006709269],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00030776882,0.00023306461,0.00025891807,0.00015204122,0.00037051304,0.000033321237,0.00018476711,0.00007063983,0.0009081821],"category_scores_gemma":[0.0000017911519,0.00022806767,0.00018390053,0.00016970451,0.000018842644,0.00014095154,8.4018944e-7,0.0002721913,0.000014851546],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0011984642,0.00032178345,0.000010271404,0.00044993425,0.00041780894,0.000005171793,0.00062281894,0.15882763,0.8125241,0.00020545073,0.0015357159,0.023880865],"study_design_scores_gemma":[0.0007724975,0.0009683733,0.000041866453,0.000020106227,0.00011737971,0.000019055631,0.000091781585,0.005573615,0.9855844,0.00029936028,0.0061469763,0.00036463616],"about_ca_topic_score_codex":0.000017156623,"about_ca_topic_score_gemma":0.00006688784,"teacher_disagreement_score":0.17306028,"about_ca_system_score_codex":0.000119413,"about_ca_system_score_gemma":0.000029882334,"threshold_uncertainty_score":0.99439573},"labels":[],"label_agreement":null},{"id":"W4287855062","doi":"10.1109/ted.2022.3192509","title":"A Novel 4H-SiC JBS-Integrated MOSFET With Self-Pinching Structure for Improved Short-Circuit Capability","year":2022,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Silicon Carbide Semiconductor Technologies","field":"Engineering","cited_by":21,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Simon Fraser University","funders":"Key Research and Development Program of Hunan Province of China","keywords":"JFET; Schottky diode; Materials science; Electric field; Optoelectronics; Schottky barrier; MOSFET; Electrical engineering; Diode; Topology (electrical circuits); Saturation current; Field-effect transistor; Physics; Engineering; Voltage","score_opus":0.011178502775008911,"score_gpt":0.21672805973045667,"score_spread":0.20554955695544774,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4287855062","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.92379004,0.00020784179,0.07133449,0.000090755944,0.00041143375,0.00095880835,0.0005414197,0.0025999343,0.00006528758],"genre_scores_gemma":[0.9981887,0.00001239501,0.0009467358,0.000086616055,0.00003064191,0.0005631562,0.000031874173,0.00010693076,0.000032987973],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.998277,0.000033897923,0.00031831258,0.000530176,0.0002275521,0.00061305123],"domain_scores_gemma":[0.9991307,0.00014010943,0.000052686326,0.00053082645,0.00007650281,0.00006914741],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.00013913873,0.00040095698,0.0003658849,0.00028509347,0.0003730908,0.00006443314,0.00044957548,0.00015756754,0.00010124693],"category_scores_gemma":[0.000005823076,0.00038052798,0.00013710232,0.00068905734,0.000053839656,0.00024579134,0.0000019638765,0.0010895568,0.0000014064318],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00006929515,0.00010216772,0.000036666403,0.00008641256,0.00030089874,9.634626e-7,0.00027869132,0.09174122,0.9010222,0.00004208536,0.000045267574,0.0062741353],"study_design_scores_gemma":[0.00088080316,0.00085004227,0.00010003924,0.000018757339,0.00019393729,0.00008271768,0.0008064584,0.09895115,0.8955517,0.0002179941,0.001685549,0.0006608394],"about_ca_topic_score_codex":0.00012457318,"about_ca_topic_score_gemma":0.0015593418,"teacher_disagreement_score":0.07439864,"about_ca_system_score_codex":0.0007830075,"about_ca_system_score_gemma":0.00011675414,"threshold_uncertainty_score":0.99986464},"labels":[],"label_agreement":null},{"id":"W4292258590","doi":"10.1109/ted.2022.3197384","title":"Extended <i>RC</i> Impedance and Relaxation Models for Dissipative Electrochemical Capacitors","year":2022,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Fractional Differential Equations Solutions","field":"Mathematics","cited_by":14,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Calgary","funders":"","keywords":"Capacitor; Dissipative system; Resistive touchscreen; Capacitive sensing; Dissipation; Electrical impedance; Supercapacitor; Relaxation (psychology); Time domain; Voltage; Electrical engineering; Materials science; Computer science; Physics; Electronic engineering; Capacitance; Engineering; Electrode; Thermodynamics","score_opus":0.0351338676323578,"score_gpt":0.3053910629334031,"score_spread":0.2702571953010453,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4292258590","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.18674082,0.00011296381,0.8112211,0.0005158586,0.00022455506,0.00066455675,0.00012098745,0.0001634406,0.00023567524],"genre_scores_gemma":[0.9933813,0.00003591835,0.004114768,0.000107675136,0.000058108395,0.0015719666,0.00003100248,0.00004573008,0.0006535365],"study_design_codex":"theoretical_or_conceptual","study_design_gemma":"theoretical_or_conceptual","domain_scores_codex":[0.9983752,0.00012980979,0.0003295924,0.00040852834,0.0003800632,0.0003768583],"domain_scores_gemma":[0.99860716,0.0007862843,0.00018984581,0.00021828694,0.000115366514,0.000083076986],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00020671927,0.00021803433,0.00022454302,0.00019991427,0.0010610073,0.000037255228,0.00014693622,0.000074236,0.000080338126],"category_scores_gemma":[0.000031732823,0.00023586537,0.00013910257,0.0003489036,0.000064625725,0.00034508618,0.0000023917264,0.00047663244,0.000003090721],"study_design_candidate":"theoretical_or_conceptual","study_design_consensus":"theoretical_or_conceptual","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0028032737,0.005779642,0.000022775846,0.0004097988,0.0014155499,0.0000033120914,0.0056581837,0.044974316,0.3906397,0.51587707,0.0041103326,0.028306028],"study_design_scores_gemma":[0.0020270501,0.0017327556,0.0001352129,0.000043486452,0.0005586552,0.00006410555,0.00090622966,0.2598449,0.23596635,0.4961456,0.0016327045,0.0009429347],"about_ca_topic_score_codex":0.00002982966,"about_ca_topic_score_gemma":0.00015283754,"teacher_disagreement_score":0.8071064,"about_ca_system_score_codex":0.00040605242,"about_ca_system_score_gemma":0.00011593182,"threshold_uncertainty_score":0.9618311},"labels":[],"label_agreement":null},{"id":"W4292968916","doi":"10.1109/ted.2022.3197387","title":"A Computational Framework for Gradually Switching Ferroelectric-Based Negative Capacitance Field-Effect Transistors","year":2022,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Ferroelectric and Negative Capacitance Devices","field":"Engineering","cited_by":4,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Natural Sciences and Engineering Research Council of Canada; Canada First Research Excellence Fund","keywords":"Ferroelectricity; Polarization (electrochemistry); Capacitor; Dielectric; Capacitance; Materials science; Physics; Condensed matter physics; Electrical engineering; Quantum mechanics; Voltage; Chemistry; Physical chemistry; Electrode; Engineering","score_opus":0.010503322929891376,"score_gpt":0.24344949565216076,"score_spread":0.2329461727222694,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4292968916","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.18373913,0.0005400831,0.81333387,0.00035422147,0.00054888637,0.00075199583,0.00007614358,0.0004641775,0.00019151495],"genre_scores_gemma":[0.99204165,0.00002180678,0.0055389563,0.0008671022,0.0000672818,0.0013176404,0.000014746419,0.00008859464,0.000042235246],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99782264,0.00017410718,0.00037822095,0.0004708914,0.00047896456,0.00067517854],"domain_scores_gemma":[0.9969668,0.0025248907,0.00009895178,0.00021342088,0.00008828171,0.00010770441],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.00028865333,0.00042224384,0.0004219864,0.00040146377,0.0008802747,0.00005641355,0.0003260658,0.00011798321,0.00012349617],"category_scores_gemma":[0.000023607352,0.0004574494,0.00030288746,0.0011048672,0.00003152898,0.00022634112,4.600073e-7,0.0010989207,0.000008058556],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00068485335,0.00015732982,0.000020650132,0.00019633833,0.00030937223,0.000005530555,0.00096850604,0.9739101,0.004309539,0.0009995975,0.00044298777,0.017995227],"study_design_scores_gemma":[0.0020665757,0.0047081793,0.000093184666,0.00010843996,0.00024099014,0.000022569357,0.00028607485,0.6765395,0.30425057,0.008912231,0.001641737,0.0011299723],"about_ca_topic_score_codex":0.000020670423,"about_ca_topic_score_gemma":0.00012103715,"teacher_disagreement_score":0.8083025,"about_ca_system_score_codex":0.00054155954,"about_ca_system_score_gemma":0.000114539216,"threshold_uncertainty_score":0.99978775},"labels":[],"label_agreement":null},{"id":"W4308471070","doi":"10.1109/ted.2022.3208218","title":"Modeling and Analysis of SiC GTO Thyristor’s Dynamic Turn-On Transient","year":2022,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Silicon Carbide Semiconductor Technologies","field":"Engineering","cited_by":7,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Simon Fraser University","funders":"","keywords":"Thyristor; Gate turn-off thyristor; Transient (computer programming); MOS-controlled thyristor; Integrated gate-commutated thyristor; Silicon carbide; Static induction thyristor; Turn (biochemistry); Materials science; Electronic engineering; Electrical engineering; Computer science; Engineering; Voltage; Physics; Transistor","score_opus":0.009329512576679147,"score_gpt":0.22660442406844586,"score_spread":0.2172749114917667,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4308471070","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.976659,0.0012613235,0.02105866,0.000059897902,0.00018084235,0.00013798574,0.000075451244,0.0004659154,0.00010089983],"genre_scores_gemma":[0.99955434,0.0002205487,0.00004504409,0.000037670674,0.0000035817277,0.0000754629,0.0000065345394,0.00003320591,0.00002359897],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9989306,0.00003358163,0.00025788049,0.0002696026,0.0002467989,0.0002615841],"domain_scores_gemma":[0.9995524,0.00006391808,0.000032673455,0.0002944268,0.000020810174,0.000035758476],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00009934581,0.00019011377,0.0003135602,0.00088737445,0.00012579838,0.000013433188,0.000193914,0.00006795173,0.000072512325],"category_scores_gemma":[0.0000014379029,0.0002071693,0.00016163629,0.0010065585,0.000034362485,0.00008714259,0.0000011535627,0.000461854,0.0000016024879],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000020411646,0.00003871592,0.000011594644,0.00002070989,0.0004923979,0.0000010759469,0.0002740316,0.85298187,0.14259061,0.000016077776,0.00000575082,0.0035467374],"study_design_scores_gemma":[0.00018102305,0.00021918248,0.00011525179,0.0000074049203,0.0005225119,0.00000393781,0.0004607863,0.92036456,0.07782934,0.00003044217,0.0000641938,0.00020135],"about_ca_topic_score_codex":0.000054479795,"about_ca_topic_score_gemma":0.00043811943,"teacher_disagreement_score":0.06738269,"about_ca_system_score_codex":0.0002580946,"about_ca_system_score_gemma":0.000016206342,"threshold_uncertainty_score":0.8448119},"labels":[],"label_agreement":null},{"id":"W4313193484","doi":"10.1109/ted.2022.3227894","title":"Bias Dependence of Non-Fourier Heat Spreading in GaN HEMTs","year":2022,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Thermal properties of materials","field":"Materials Science","cited_by":46,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"National Natural Science Foundation of China","keywords":"Materials science; Optoelectronics; Fourier transform; Wide-bandgap semiconductor; Electronic engineering; Physics; Engineering","score_opus":0.02267773880140397,"score_gpt":0.25530681500181984,"score_spread":0.23262907620041587,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4313193484","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9967391,0.00012382316,0.0016367168,0.00015360175,0.0005440886,0.00027076565,0.000038882474,0.00006085235,0.00043216656],"genre_scores_gemma":[0.9992038,0.00001602833,0.00020062453,0.00014724965,0.000024996283,0.00011677691,0.0000012016303,0.000028681146,0.00026064986],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9981295,0.00023755374,0.00041169568,0.0003486881,0.0004384333,0.00043413023],"domain_scores_gemma":[0.99938226,0.00010644477,0.00010446608,0.00031920336,0.0000313006,0.000056304278],"candidate_categories":["insufficient_payload"],"consensus_categories":[],"category_scores_codex":[0.0007233112,0.00017744377,0.00029290296,0.0001915575,0.00023531879,0.000044887856,0.00046033805,0.00004823264,0.0036819372],"category_scores_gemma":[0.0000061817805,0.00017157663,0.00007037251,0.00022996844,0.000060129973,0.00025965067,0.000005060482,0.0002367801,0.00013166017],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0002659624,0.00013355236,0.00007834523,0.000040053637,0.000008913675,0.000006594614,0.00041355635,0.042307336,0.95604295,0.000008236584,0.000016053624,0.0006784758],"study_design_scores_gemma":[0.0003359154,0.0003962587,0.0003199087,0.00003846099,0.000016223346,0.000019280344,0.00019982028,0.00049148925,0.99778414,0.000026484271,0.00018708795,0.00018490652],"about_ca_topic_score_codex":0.0009488414,"about_ca_topic_score_gemma":0.0004648924,"teacher_disagreement_score":0.041815847,"about_ca_system_score_codex":0.00017876316,"about_ca_system_score_gemma":0.00009476815,"threshold_uncertainty_score":0.99722886},"labels":[],"label_agreement":null},{"id":"W4313396548","doi":"10.1109/ted.2022.3225139","title":"Preliminary Experimental Study on a Compact Relativistic Magnetron With Diffraction Output of TEM Mode","year":2022,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Gyrotron and Vacuum Electronics Research","field":"Physics and Astronomy","cited_by":9,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Calgary","funders":"National Natural Science Foundation of China","keywords":"Diffraction; Microwave; Diode; Physics; Voltage; Optics; Materials science; Cavity magnetron; Optoelectronics; Mode (computer interface); Power (physics); Radiation; Magnetic field; Computational physics; Electrical engineering; Engineering; Computer science","score_opus":0.022486690559271477,"score_gpt":0.31427631737862904,"score_spread":0.29178962681935755,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4313396548","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.98621553,0.00006931083,0.010142198,0.000098583565,0.00007535894,0.0008865075,0.000053646298,0.0000557697,0.0024031147],"genre_scores_gemma":[0.9974367,0.0000012079623,0.0000167462,0.000017500264,0.000030910913,0.00033077554,0.000016824386,0.000046729518,0.002102631],"study_design_codex":"simulation_or_modeling","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99783576,0.0002770405,0.0002795544,0.00043340755,0.0006716593,0.0005025763],"domain_scores_gemma":[0.99921674,0.00013777702,0.00015473766,0.00035347108,0.00004443,0.00009284718],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.00015614592,0.00027565836,0.0003042044,0.0002945064,0.0005300792,0.00003579342,0.00024782377,0.000025617583,0.00058255874],"category_scores_gemma":[4.0361553e-7,0.00024840643,0.00012519893,0.00040706436,0.00004220195,0.00015559755,0.0000034405632,0.0008952745,0.000020416215],"study_design_candidate":"simulation_or_modeling","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.030818982,0.120896816,0.029854452,0.00015516802,0.0039653187,0.000043704422,0.012701528,0.6859271,0.08043605,0.0073516825,0.0011855736,0.026663637],"study_design_scores_gemma":[0.01654633,0.23695108,0.047618218,0.00013536075,0.00081094744,0.000037462094,0.032804567,0.06646238,0.5929007,0.00067692884,0.0026366385,0.0024193733],"about_ca_topic_score_codex":0.0005223909,"about_ca_topic_score_gemma":0.000039871218,"teacher_disagreement_score":0.6194647,"about_ca_system_score_codex":0.0003063234,"about_ca_system_score_gemma":0.000153567,"threshold_uncertainty_score":0.99999684},"labels":[],"label_agreement":null},{"id":"W4380635208","doi":"10.1109/ted.2023.3279812","title":"On the Existence of Negative Capacitance: Examining Ferroelectric-Dielectric Stack Experiments Using the NLS and LK Models","year":2023,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Ferroelectric and Negative Capacitance Devices","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Alberta","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Ferroelectricity; Capacitance; Dielectric; Stack (abstract data type); Voltage; Negative impedance converter; Physics; Hysteresis; Statistical physics; Condensed matter physics; Computer science; Optoelectronics; Quantum mechanics; Voltage source","score_opus":0.06760075351957254,"score_gpt":0.2721711240726451,"score_spread":0.20457037055307256,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4380635208","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9462358,0.001595617,0.049499504,0.000096180695,0.00019548797,0.0005512385,0.000018713685,0.00026960036,0.0015378912],"genre_scores_gemma":[0.9982053,0.0011401321,0.00010992955,0.00015764066,0.00003290922,0.00015281561,0.0000012207051,0.00005988977,0.00014014498],"study_design_codex":"simulation_or_modeling","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.997942,0.00016732921,0.00037538222,0.0003827946,0.00045312278,0.00067941315],"domain_scores_gemma":[0.9980834,0.0012553941,0.00012674087,0.0003585988,0.00010559005,0.00007025376],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.00034630182,0.00037694152,0.00034712176,0.00034425518,0.00049570185,0.00006501686,0.0003508468,0.00011226101,0.00002393573],"category_scores_gemma":[0.000020712603,0.00025614648,0.000092521055,0.0022549625,0.00016568771,0.00035718706,0.0000014820629,0.0006364201,0.000012216911],"study_design_candidate":"simulation_or_modeling","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00047512644,0.00022141948,0.00003629895,0.00031742846,0.0011230815,0.000015180954,0.014842231,0.595404,0.3641375,0.008328006,0.00060082023,0.014498843],"study_design_scores_gemma":[0.0003405062,0.00047180217,0.00010485368,0.00013622442,0.00007119082,0.000009428323,0.001643304,0.4318147,0.5627945,0.0022631274,0.000022813496,0.0003275621],"about_ca_topic_score_codex":0.000039458595,"about_ca_topic_score_gemma":0.00006614575,"teacher_disagreement_score":0.19865699,"about_ca_system_score_codex":0.00019039796,"about_ca_system_score_gemma":0.000055335324,"threshold_uncertainty_score":0.9999891},"labels":[],"label_agreement":null},{"id":"W4392567289","doi":"10.1109/ted.2024.3370532","title":"Quantum Transport Simulations of Sub-60-mV/Decade Switching of Silicon Cold Source Transistors","year":2024,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":13,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McGill University; Nanoacademic Technologies","funders":"Higher Education Discipline Innovation Project; Natural Sciences and Engineering Research Council of Canada; National Natural Science Foundation of China","keywords":"Transistor; Silicon; Materials science; Optoelectronics; Quantum; Engineering physics; Physics; Electrical engineering; Engineering; Voltage; Quantum mechanics","score_opus":0.012942710810926504,"score_gpt":0.2444462522092373,"score_spread":0.23150354139831078,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4392567289","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.6123766,0.0017725269,0.3848217,0.000013527776,0.00038805173,0.00019977559,0.000047595255,0.00024859133,0.00013165949],"genre_scores_gemma":[0.9993941,0.00029990732,0.00005895441,0.00002127261,0.000039325892,0.000024325827,0.0000060742714,0.00008197216,0.00007404384],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.998405,0.000031339674,0.00060274755,0.00030165192,0.0003032651,0.00035603472],"domain_scores_gemma":[0.99936295,0.00018703446,0.000064961954,0.00026225764,0.000048800008,0.00007397149],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.00012743923,0.00028114213,0.00037072762,0.00032991244,0.000087272594,0.000016786675,0.00019851832,0.0001391453,0.00009187729],"category_scores_gemma":[9.826903e-7,0.000292605,0.00022112826,0.00059591036,0.00003937516,0.00035396652,2.3648461e-7,0.000404228,0.0000074108257],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000014879306,0.000066154265,0.000023545286,0.0004194941,0.00019106644,0.0000020097268,0.00068820704,0.4430541,0.55063784,0.00021939987,0.000007349003,0.004675961],"study_design_scores_gemma":[0.00026357948,0.00017453777,0.00007606233,0.00025160765,0.00025532217,0.0000045200895,0.00014689915,0.11930365,0.8759163,0.00010266811,0.0031929903,0.00031183666],"about_ca_topic_score_codex":0.00004922972,"about_ca_topic_score_gemma":0.00023623889,"teacher_disagreement_score":0.38701755,"about_ca_system_score_codex":0.00011245589,"about_ca_system_score_gemma":0.000056632834,"threshold_uncertainty_score":0.9999526},"labels":[],"label_agreement":null},{"id":"W4403296844","doi":"10.1109/ted.2024.3469918","title":"Stimulated Secondary Emission of Single-Photon Avalanche Diodes","year":2024,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Advanced Optical Sensing Technologies","field":"Physics and Astronomy","cited_by":4,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"TRIUMF","funders":"","keywords":"Optoelectronics; Diode; Single-photon avalanche diode; Avalanche diode; Avalanche photodiode; Photon; Avalanche breakdown; Physics; Materials science; Electrical engineering; Optics; Detector; Engineering; Voltage; Breakdown voltage","score_opus":0.012172975297783772,"score_gpt":0.262862516198941,"score_spread":0.25068954090115725,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4403296844","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.70561206,0.0003944543,0.2903247,0.00020324283,0.00021717815,0.00015920724,0.000034485704,0.0005026527,0.0025520043],"genre_scores_gemma":[0.9980495,0.000010843843,0.0014094983,0.000015091071,0.000030858708,0.000009459668,0.0000066878506,0.000027467708,0.00044057725],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9990681,0.000022844833,0.00022201969,0.0002797616,0.00013889244,0.00026841456],"domain_scores_gemma":[0.9994959,0.00016463634,0.00004618923,0.00021146437,0.00003916387,0.00004262915],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00005106289,0.00017565576,0.00019859563,0.00013668017,0.00008845278,0.00003957196,0.0001244165,0.00007883612,0.00023734508],"category_scores_gemma":[0.0000015811482,0.0001499539,0.00011790148,0.00034585106,0.000080336424,0.00017058436,0.0000013960134,0.00040765264,0.00002926782],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00008558524,0.0003687247,0.00010069778,0.00010473999,0.00026906395,0.0000052684486,0.00014115976,0.00564083,0.6894707,0.0016780013,0.00013331407,0.30200192],"study_design_scores_gemma":[0.00015453366,0.0002412084,0.000038338807,0.00015683267,0.00005989737,0.0000018070973,0.00006602071,0.0055997134,0.98705643,0.004444727,0.002009377,0.00017111651],"about_ca_topic_score_codex":0.000033329256,"about_ca_topic_score_gemma":0.0000075196363,"teacher_disagreement_score":0.3018308,"about_ca_system_score_codex":0.000049469425,"about_ca_system_score_gemma":0.000047606536,"threshold_uncertainty_score":0.6114943},"labels":[],"label_agreement":null},{"id":"W4403863718","doi":"10.1109/ted.2024.3480028","title":"Micromachined Capacitive Sensor With Configured Boundaries: Approach, Design and Fabrication","year":2024,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Advanced MEMS and NEMS Technologies","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Windsor","funders":"Natural Sciences and Engineering Research Council of Canada; Canada Foundation for Innovation; CMC Microsystems","keywords":"Fabrication; Capacitive sensing; Surface micromachining; Microelectromechanical systems; Electrical engineering; Electronic engineering; Engineering; Materials science; Capacitance; Optoelectronics; Computer science; Physics; Electrode","score_opus":0.008802273623719555,"score_gpt":0.2156498874754477,"score_spread":0.20684761385172815,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4403863718","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.09964838,0.0012825349,0.8969087,0.000073729694,0.00010376244,0.0002731053,0.000013728317,0.0012576367,0.0004384504],"genre_scores_gemma":[0.9856928,0.00031171084,0.013605501,0.000020304195,0.000016869106,0.000111046975,0.0000033378376,0.00003914941,0.00019929129],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9993389,0.000009596044,0.00010738805,0.00023514069,0.00008464481,0.00022429919],"domain_scores_gemma":[0.99972796,0.00007477009,0.000013718356,0.0001238622,0.000025913034,0.000033783213],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000048145914,0.00018158843,0.00013993244,0.0001552528,0.00016761625,0.00013570917,0.00005884421,0.00008796268,0.00000703284],"category_scores_gemma":[0.0000013060202,0.00014870067,0.000026288457,0.00026021394,0.0001385324,0.00020251145,2.4540586e-7,0.00030224925,0.000007733895],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00016878749,0.00008224257,0.0000017411033,0.0004225828,0.0005732328,0.000016004522,0.0018208593,0.0823014,0.8552211,0.0010252339,0.0002493649,0.05811743],"study_design_scores_gemma":[0.0002545578,0.0003305969,0.000032117438,0.000076482436,0.00008656349,0.00006215396,0.0003401261,0.052298956,0.9389345,0.0002856663,0.0069777602,0.0003205116],"about_ca_topic_score_codex":0.000017248027,"about_ca_topic_score_gemma":0.000036381567,"teacher_disagreement_score":0.8860444,"about_ca_system_score_codex":0.00007193944,"about_ca_system_score_gemma":0.000031637435,"threshold_uncertainty_score":0.60638374},"labels":[],"label_agreement":null},{"id":"W4406172019","doi":"10.1109/ted.2024.3521653","title":"State-Aware Multibit Write Algorithm for TiO<sub> <i>x</i> </sub>-Based Resistive Switching Memory Devices","year":2025,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Advanced Memory and Neural Computing","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Natural Sciences and Engineering Research Council of Canada; Canada First Research Excellence Fund","keywords":"Reset (finance); Resistive random-access memory; State (computer science); Conductance; Algorithm; Voltage; Relaxation (psychology); Amplitude; Computer science; Electrical engineering; Mathematics; Physics; Engineering; Combinatorics; Quantum mechanics","score_opus":0.008248586864534469,"score_gpt":0.24465890705790616,"score_spread":0.2364103201933717,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4406172019","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.21771482,0.0004375565,0.7800194,0.000071673094,0.00048448,0.00048108757,0.000049980707,0.000649308,0.00009167455],"genre_scores_gemma":[0.99617004,0.000067445675,0.0028833828,0.00047985412,0.00006671341,0.00015227616,0.000012837944,0.00006695455,0.0001005082],"study_design_codex":"simulation_or_modeling","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99829173,0.000055502827,0.00039774147,0.00046713414,0.00018082574,0.0006070555],"domain_scores_gemma":[0.9988991,0.00056677096,0.000077983066,0.00025851093,0.00010572369,0.00009188662],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.00017535653,0.00038169613,0.0003458769,0.00031570726,0.0005141753,0.00006801806,0.00021659405,0.00011786751,0.000003942336],"category_scores_gemma":[0.000004560389,0.0004080272,0.00019186466,0.0004997364,0.00002820085,0.0003381713,0.0000014698122,0.00054215273,0.000013904677],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00010381483,0.0000728467,0.000004435422,0.00032712542,0.00014408737,0.00000583266,0.000082431805,0.4961966,0.17792019,0.000005057408,0.000053446627,0.32508412],"study_design_scores_gemma":[0.0006675028,0.00011166174,0.00006077542,0.00020553095,0.0000877086,0.0000020359203,0.00006562817,0.22662939,0.7712883,0.00008646138,0.00047434444,0.0003206912],"about_ca_topic_score_codex":0.0000110823685,"about_ca_topic_score_gemma":0.0004973891,"teacher_disagreement_score":0.7784552,"about_ca_system_score_codex":0.00019984301,"about_ca_system_score_gemma":0.000074470336,"threshold_uncertainty_score":0.99983716},"labels":[],"label_agreement":null},{"id":"W4408047970","doi":"10.1109/ted.2024.3520276","title":"Corrections to “Stimulated Secondary Emission of Single-Photon Avalanche Diodes”","year":2025,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Advanced Optical Sensing Technologies","field":"Physics and Astronomy","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of British Columbia; University of British Columbia Hospital; TRIUMF","funders":"","keywords":"Diode; Physics; Single-photon avalanche diode; Optoelectronics; Avalanche diode; Photon; Avalanche breakdown; Avalanche photodiode; Optics; Detector; Voltage; Quantum mechanics; Breakdown voltage","score_opus":0.009438951198929632,"score_gpt":0.2658808845373146,"score_spread":0.256441933338385,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4408047970","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.46256748,0.000034264205,0.5313159,0.0003395214,0.00026545062,0.00022778647,0.00002082223,0.0002268014,0.00500198],"genre_scores_gemma":[0.99607486,0.0000029393116,0.0024273088,0.000086970125,0.000014681556,0.000024239616,0.0000049246496,0.000015896376,0.001348176],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9990191,0.000027865739,0.0002604939,0.0002902157,0.00011209265,0.00029027293],"domain_scores_gemma":[0.9993351,0.00016095788,0.00006837275,0.0002928484,0.00008780625,0.00005491833],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000047674544,0.00017911554,0.00023882723,0.00023867677,0.0001836907,0.000022110897,0.00016008152,0.00008359321,0.00013093831],"category_scores_gemma":[0.000005328237,0.00017071693,0.00010611912,0.0007075519,0.000060233015,0.00009809619,0.0000026253626,0.00036310925,0.000019800384],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00027940332,0.0010514028,0.00090061483,0.000048769936,0.0003215491,0.0000012064534,0.00015430542,0.034403943,0.67981935,0.0017651689,0.00056938105,0.2806849],"study_design_scores_gemma":[0.00029368795,0.0002549896,0.00023418489,0.00011722909,0.00006257661,4.2596415e-7,0.00012027205,0.0016491159,0.9920411,0.0022705672,0.0027866997,0.00016916521],"about_ca_topic_score_codex":0.00008594604,"about_ca_topic_score_gemma":0.00003911119,"teacher_disagreement_score":0.5335074,"about_ca_system_score_codex":0.00008275309,"about_ca_system_score_gemma":0.00006509567,"threshold_uncertainty_score":0.6961634},"labels":[],"label_agreement":null},{"id":"W4409494765","doi":"10.1109/ted.2025.3556041","title":"Charge Carrier Lifetime and Trap States in Novel Pure-Boron-Based Ultrashallow <i>p</i> – <i>n</i> Junctions","year":2025,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Boron and Carbon Nanomaterials Research","field":"Materials Science","cited_by":2,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Toronto","funders":"Shanghai Rising-Star Program; Natural Sciences and Engineering Research Council of Canada; National Natural Science Foundation of China","keywords":"Boron; Trap (plumbing); Materials science; Optoelectronics; Charge (physics); Silicon; Charge carrier; Atomic physics; Physics; Electrical engineering; Engineering; Nuclear physics; Quantum mechanics","score_opus":0.008336310522382753,"score_gpt":0.2587002925041616,"score_spread":0.25036398198177884,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4409494765","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9749332,0.00057343673,0.019850843,0.0018589168,0.0008007844,0.00059651624,0.00024081278,0.00021064765,0.00093482545],"genre_scores_gemma":[0.9970396,0.0001910862,0.00010899286,0.0010229626,0.000029855597,0.000249007,0.000012048457,0.000028842742,0.0013176048],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9978157,0.00015577809,0.00041165052,0.00058784446,0.00034383446,0.00068517966],"domain_scores_gemma":[0.9991948,0.00019159964,0.000066726905,0.0003245401,0.000080010024,0.00014234745],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.00048896426,0.0002927578,0.00035806527,0.00039134952,0.00027722737,0.00020137,0.00027518134,0.00016964524,0.00063069764],"category_scores_gemma":[0.000007258595,0.0002748443,0.000088951,0.00062840944,0.00015623526,0.00026098298,0.0000020198045,0.00031013734,0.000055761073],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0002862104,0.0004306166,0.00017043734,0.00009815273,0.000025343968,0.0000032429646,0.00013288076,0.0015097405,0.99573416,0.00012846456,0.0001961959,0.0012845829],"study_design_scores_gemma":[0.001500991,0.00023315634,0.000828265,0.00008923815,0.00004193464,0.000004011561,0.000069160444,0.00246716,0.99056125,0.000045913654,0.0038710542,0.0002878818],"about_ca_topic_score_codex":0.000568694,"about_ca_topic_score_gemma":0.0032338246,"teacher_disagreement_score":0.022106383,"about_ca_system_score_codex":0.00018093713,"about_ca_system_score_gemma":0.0004718265,"threshold_uncertainty_score":0.9999704},"labels":[],"label_agreement":null},{"id":"W4409883144","doi":"10.1109/ted.2025.3561703","title":"Stack Optimization of TiO<i> <sub>x</sub> </i>-Based Resistive Switching Devices Through Interface Engineering","year":2025,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Advanced Memory and Neural Computing","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Natural Sciences and Engineering Research Council of Canada; Canada First Research Excellence Fund","keywords":"Stack (abstract data type); Resistive touchscreen; Materials science; Interface (matter); Optoelectronics; Electrical engineering; Electronic engineering; Computer science; Nanotechnology; Engineering; Operating system; Composite material","score_opus":0.007778485957451694,"score_gpt":0.23960176408273545,"score_spread":0.23182327812528375,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4409883144","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.3162461,0.0003724186,0.6824804,0.0000328388,0.0002465602,0.00014139783,0.00000448586,0.00030662757,0.00016916754],"genre_scores_gemma":[0.9961795,0.000089091875,0.003554095,0.00007681588,0.000022984023,0.000022333048,0.0000028355546,0.00003758276,0.000014764113],"study_design_codex":"simulation_or_modeling","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9989096,0.000032659787,0.00034478618,0.0002592692,0.00013913987,0.0003145814],"domain_scores_gemma":[0.99939126,0.00024258895,0.00007182092,0.00019435973,0.00006480419,0.000035140183],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.00008922296,0.00024894252,0.0002562587,0.00020988403,0.00013886543,0.000028983988,0.0001598348,0.00008964801,0.0000053829963],"category_scores_gemma":[0.0000067762094,0.00027249538,0.0000928885,0.00058588386,0.000016819175,0.00035440054,0.0000013907174,0.00038679581,0.0000037627028],"study_design_candidate":"simulation_or_modeling","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000042298117,0.000026085127,0.000003308335,0.00021446728,0.00005665677,7.618312e-7,0.0000721695,0.7673265,0.22996455,0.000026384429,0.0000052169385,0.0022616305],"study_design_scores_gemma":[0.00021022111,0.000061181556,0.000024897237,0.0002697446,0.000044480246,8.527577e-7,0.000030880474,0.3099719,0.6891372,0.000018112789,0.00007865359,0.00015185856],"about_ca_topic_score_codex":0.0000050379385,"about_ca_topic_score_gemma":0.000052644828,"teacher_disagreement_score":0.6799334,"about_ca_system_score_codex":0.00012839468,"about_ca_system_score_gemma":0.000036980862,"threshold_uncertainty_score":0.9999727},"labels":[],"label_agreement":null},{"id":"W4409917066","doi":"10.1109/ted.2025.3561757","title":"Investigating the Performance of Sub-10-nm WSi<sub>2</sub>N<sub>4</sub> MOSFETs With Native Dielectric Through a Machine Learning Tight-Binding Framework","year":2025,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Semiconductor materials and devices","field":"Engineering","cited_by":4,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Dielectric; MOSFET; Materials science; Optoelectronics; Tight binding; Electronic engineering; Engineering physics; Computer science; Condensed matter physics; Electrical engineering; Physics; Transistor; Engineering; Electronic structure; Voltage","score_opus":0.008343024490878065,"score_gpt":0.21954557421439908,"score_spread":0.211202549723521,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4409917066","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.98652387,0.0016376337,0.010142631,0.00009573407,0.00039063834,0.00042155804,0.000017717477,0.00040733407,0.00036286662],"genre_scores_gemma":[0.99800444,0.001272487,0.00024874203,0.00013446668,0.00008083137,0.00013769187,0.000012048519,0.00008680584,0.000022503868],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99771094,0.00015157837,0.0005580353,0.00046996257,0.00040548432,0.00070401095],"domain_scores_gemma":[0.9986892,0.00053547556,0.00022520885,0.00034360014,0.00013002205,0.00007649507],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.00031780126,0.0005062732,0.0005253345,0.00032473498,0.0006074695,0.00013530327,0.00035877046,0.00023342483,0.000023800947],"category_scores_gemma":[0.000024015004,0.0003958542,0.00012763846,0.001591895,0.00013027652,0.00058729143,0.0000049225546,0.0011498888,0.00002606058],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00007268623,0.000054558193,0.00031491558,0.00039360047,0.00034419794,0.0000016316376,0.0010086707,0.06183173,0.9311078,0.000112652255,0.000020701167,0.004736831],"study_design_scores_gemma":[0.00037304038,0.00036582223,0.00040777496,0.00068609056,0.0001795419,0.000011693051,0.00015574256,0.029372893,0.96777725,0.00011429822,0.00014973713,0.0004061087],"about_ca_topic_score_codex":0.000049560447,"about_ca_topic_score_gemma":0.00030248906,"teacher_disagreement_score":0.036669433,"about_ca_system_score_codex":0.00019338475,"about_ca_system_score_gemma":0.00012366562,"threshold_uncertainty_score":0.9998493},"labels":[],"label_agreement":null},{"id":"W4413267654","doi":"10.1109/ted.2025.3589200","title":"Enhanced Charge Transport in Organic Thin-Film Transistors Through Environmentally Benign MXene-P3HT Nanocomposites","year":2025,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"MXene and MAX Phase Materials","field":"Materials Science","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Thin-film transistor; Nanocomposite; Materials science; Transistor; Organic semiconductor; Charge (physics); Optoelectronics; Organic electronics; Environmentally friendly; Thin film; Nanotechnology; Electrical engineering; Voltage; Layer (electronics); Engineering; Physics","score_opus":0.007219897024157369,"score_gpt":0.23808516179584843,"score_spread":0.23086526477169106,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4413267654","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9373577,0.00035370147,0.05748788,0.00041518782,0.00072158116,0.00061629334,0.00007203525,0.00020302871,0.0027725513],"genre_scores_gemma":[0.9957624,0.00031203456,0.00041626726,0.00083958876,0.00003682459,0.00019101932,0.000018535598,0.00004238292,0.0023809283],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99743515,0.00016055985,0.0006649445,0.000731048,0.00033400534,0.0006742905],"domain_scores_gemma":[0.9992608,0.00009719958,0.00012012289,0.00041963632,0.000025814166,0.00007641652],"candidate_categories":["metaepi_narrow","insufficient_payload"],"consensus_categories":[],"category_scores_codex":[0.00031927373,0.00041017382,0.00053366256,0.00024780436,0.00030030575,0.000069919704,0.0004439573,0.00019685381,0.0050888225],"category_scores_gemma":[0.0000018063878,0.0004003908,0.00016883397,0.00047346056,0.00009907022,0.00052752136,0.0000015697224,0.0002580943,0.00026991797],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0002658145,0.00049893284,0.000015445932,0.00008859896,0.000042604057,0.000007447477,0.00079031213,0.0015541454,0.9960811,0.00020402283,0.000035378565,0.00041618824],"study_design_scores_gemma":[0.001018631,0.00023288302,0.00023202869,0.000102876445,0.00010412038,0.00000434467,0.00008081583,0.000051688938,0.99419355,0.00019403458,0.0034166565,0.00036835662],"about_ca_topic_score_codex":0.00027909267,"about_ca_topic_score_gemma":0.0019483783,"teacher_disagreement_score":0.058404677,"about_ca_system_score_codex":0.000243385,"about_ca_system_score_gemma":0.00014666718,"threshold_uncertainty_score":0.9998448},"labels":[],"label_agreement":null},{"id":"W4416582957","doi":"10.1109/ted.2025.3631444","title":"Dual-Frequency Square PMUT With Enhanced Transmission Efficiency at Fundamental and Higher Modes","year":2025,"lang":"","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Ultrasound Imaging and Elastography","field":"Medicine","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Windsor","funders":"Hellenic Foundation for Research and Innovation; Natural Sciences and Engineering Research Council of Canada; Windsor Cancer Centre Foundation","keywords":"PMUT; Piezoelectricity; Ultrasonic sensor; Finite element method; Sensitivity (control systems); Transducer; Transmission (telecommunications); Capacitive micromachined ultrasonic transducers; Cascade","score_opus":0.005832997008172149,"score_gpt":0.24870616130865272,"score_spread":0.2428731643004806,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4416582957","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.77522165,0.01064821,0.20357245,0.0021985325,0.0005222309,0.00087624113,0.000043822605,0.00024060464,0.0066762706],"genre_scores_gemma":[0.98764414,0.0034264277,0.00078948174,0.0005959839,0.00006867974,0.00011621798,0.000015345775,0.00007200023,0.007271748],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9963929,0.00015689108,0.00061036146,0.0011414054,0.0006051686,0.0010932552],"domain_scores_gemma":[0.9985815,0.0002629905,0.00015578356,0.0005015085,0.00014738835,0.0003507803],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.00018861126,0.00076095975,0.0007056857,0.0007894176,0.0011664969,0.0001442839,0.0001745001,0.0002870217,0.00071693363],"category_scores_gemma":[0.0000021039932,0.00063146534,0.00027789836,0.0014560813,0.0005126602,0.0003727253,0.0000017850937,0.0009443277,0.00004413342],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0048681432,0.0034895767,0.002965449,0.002006514,0.0017286979,0.000021777538,0.0027776724,0.0020933251,0.9041317,0.00016513758,0.00014095704,0.075611025],"study_design_scores_gemma":[0.011093982,0.010691077,0.0109502915,0.005881317,0.004367793,0.00020384935,0.001824188,0.0017303921,0.93452716,0.00021269967,0.016615424,0.0019018385],"about_ca_topic_score_codex":0.00025127776,"about_ca_topic_score_gemma":0.0003898707,"teacher_disagreement_score":0.21242249,"about_ca_system_score_codex":0.0003998699,"about_ca_system_score_gemma":0.00032490125,"threshold_uncertainty_score":0.99961364},"labels":[],"label_agreement":null},{"id":"W4416922682","doi":"10.1109/ted.2025.3633207","title":"An Improved 2-D Photon Detection Probability Model for Single-Photon Avalanche Diodes With Experimental Calibrations","year":2025,"lang":"","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Advanced Optical Sensing Technologies","field":"Physics and Astronomy","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McMaster University","funders":"Guangdong Science and Technology Department","keywords":"Photodetection; Monte Carlo method; Diode; Passivation; Dielectric; CMOS; Transmission (telecommunications); Single-photon avalanche diode; Photon; Detector","score_opus":0.01658963132479806,"score_gpt":0.274350771484198,"score_spread":0.25776114015939994,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4416922682","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.36625347,0.000084708816,0.6311303,0.00014315934,0.0001557481,0.0016611784,0.00009520804,0.00033284858,0.00014340943],"genre_scores_gemma":[0.97670037,0.000008834437,0.021796387,0.00007720697,0.000047043242,0.0010433755,0.000026545766,0.00007193359,0.00022832621],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9970908,0.000093551054,0.00058428687,0.0011453131,0.00022011297,0.00086592976],"domain_scores_gemma":[0.9983957,0.00020830477,0.00023305335,0.00081264967,0.00021719339,0.00013309796],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.00013456657,0.0006477149,0.00054235297,0.00024401394,0.0010528392,0.00027824813,0.0003424369,0.00030892348,0.000019614361],"category_scores_gemma":[0.000004956765,0.00061040005,0.0002645206,0.0006322213,0.00035969028,0.0008769584,0.0000034633783,0.0007031045,0.0000035463302],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0017727651,0.0039346884,0.000026512213,0.00011425523,0.00038887115,3.5619027e-7,0.00029077716,0.12443745,0.837436,0.0020233248,0.000002364669,0.029572627],"study_design_scores_gemma":[0.00077415514,0.0017048557,0.0000049822156,0.00006601756,0.00019079601,9.3709343e-7,0.00030475482,0.4313709,0.5604994,0.0047004633,0.000038842787,0.00034387963],"about_ca_topic_score_codex":0.00010461268,"about_ca_topic_score_gemma":0.00071694213,"teacher_disagreement_score":0.6104469,"about_ca_system_score_codex":0.0005933184,"about_ca_system_score_gemma":0.00029600508,"threshold_uncertainty_score":0.99963474},"labels":[],"label_agreement":null},{"id":"W4417051936","doi":"10.1109/ted.2025.3636111","title":"Characterization of Leakage Current in Buried Heterostructure Semiconductor InGaAsP Lasers Using a Diode-Resistor Electrical Model","year":2025,"lang":"","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"Semiconductor Quantum Structures and Devices","field":"Physics and Astronomy","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"National Research Council Canada","funders":"","keywords":"Semiconductor laser theory; Heterojunction; Doping; Leakage (economics); Laser; Diode; Saturation current; Active layer; Laser diode","score_opus":0.01794074117615009,"score_gpt":0.28733649932594096,"score_spread":0.2693957581497909,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4417051936","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9304117,0.0011742434,0.06573035,0.000097458986,0.0012456398,0.00081160635,0.00044244117,0.00004853652,0.0000380142],"genre_scores_gemma":[0.9990155,0.00018516241,0.00012890395,0.00012940953,0.00019178602,0.00005626625,0.000084590494,0.00007344477,0.0001349019],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99583477,0.00026081112,0.0013459333,0.0010720659,0.00046775935,0.0010186754],"domain_scores_gemma":[0.9981975,0.00014439062,0.0006841633,0.0006090234,0.00019456548,0.00017034143],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.00018244107,0.0008396447,0.0010981037,0.0010577198,0.0003721888,0.0001543183,0.0005336128,0.0003683632,0.0001253657],"category_scores_gemma":[0.0000045146153,0.00086990464,0.0004947821,0.0016549384,0.00014396399,0.0006508092,0.0000071104078,0.0014560387,0.0000045407955],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0005851718,0.00059842895,0.0010699511,0.0004248376,0.00036895898,0.0000013820363,0.00071877654,0.032997727,0.9540504,0.0007261234,0.000014639095,0.008443584],"study_design_scores_gemma":[0.0017017924,0.00022642662,0.00095434865,0.0007054424,0.0005038718,0.00000231548,0.00014090701,0.20098053,0.7929078,0.0007177359,0.00038028765,0.00077854726],"about_ca_topic_score_codex":0.00036429334,"about_ca_topic_score_gemma":0.00019487661,"teacher_disagreement_score":0.1679828,"about_ca_system_score_codex":0.00051701936,"about_ca_system_score_gemma":0.00086588465,"threshold_uncertainty_score":0.99937516},"labels":[],"label_agreement":null}]}