{"meta":{"query_hash":"e91c876452b4","filters":{"venue":"Journal of Computational Electronics"},"cohort_total":26,"direct_labels_cover":0,"predictions_cover":26,"exported":26,"export_cap":100000,"truncated":false,"label_status":"direct model label, unvalidated","prediction_status":"machine_predicted_unvalidated (Codex and Gemma teacher distillation)","score_status":"score_only:v0-immature-baseline","snapshot":{"source":"OpenAlex, pinned release, all 482 partitions","release":"2026-06-24","frame_built":"2026-07-12"},"permalink":"https://metacan.xera.ac/q/e91c876452b4","api":"https://metacan.xera.ac/api/v1/cohort?venue=Journal+of+Computational+Electronics"},"results":[{"id":"W1497612144","doi":"10.1007/s10825-008-0212-8","title":"NEGF simulations of the effect of strain on scaled double gate nanoMOSFETs","year":2008,"lang":"en","type":"article","venue":"Journal of Computational Electronics","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":10,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Engineering and Physical Sciences Research Council","keywords":"Double gate; MOSFET; Materials science; Transistor; Nanometre; Scaling; Strain (injury); Transverse plane; Effective mass (spring–mass system); Range (aeronautics); Electron; Condensed matter physics; Optoelectronics; Physics; Voltage; Composite material; Quantum mechanics; Geometry","score_opus":0.011196096841469355,"score_gpt":0.24184504365470078,"score_spread":0.23064894681323142,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1497612144","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.959828,0.00042991232,0.004226406,0.0012691586,0.00022537066,0.000029122619,0.0008543699,0.0002294804,0.032908242],"genre_scores_gemma":[0.9965875,0.000092524,0.0009429257,0.00014598983,0.000034806,0.000029996778,0.00023938461,0.00006500236,0.0018618302],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9997954,0.000036036792,0.0000063282414,0.00002352106,0.000062588195,0.00007615287],"domain_scores_gemma":[0.99895287,0.0006227443,0.000075034535,0.000074985815,0.00016426336,0.000110185545],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00038021785,0.0005904951,0.0012051786,0.0005520607,0.00091224944,0.0009241192,0.0015819308,0.0019296409,0.0064051957],"category_scores_gemma":[0.0023391787,0.00047483348,0.0006248888,0.000810363,0.0010400877,0.0009557428,0.00059981336,0.00075602566,0.0003548515],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00022170803,0.00009748397,0.0017817486,0.00011468457,0.00005778825,0.00037748492,0.00008947313,0.98135537,0.0031310378,0.009065507,0.001856235,0.0018514561],"study_design_scores_gemma":[0.00003672146,0.000043157474,0.0006022684,0.000009503349,0.00000939033,0.000021924707,0.000033855827,0.9969524,0.00055802026,0.0014032504,0.00031677305,0.000012735091],"about_ca_topic_score_codex":0.018145323,"about_ca_topic_score_gemma":0.017111259,"teacher_disagreement_score":0.018145323,"about_ca_system_score_codex":0.0016752031,"about_ca_system_score_gemma":0.0009029382,"threshold_uncertainty_score":0.036079407},"labels":[],"label_agreement":null},{"id":"W1512978613","doi":"10.1023/a:1020748702245","title":"Modeling Spin-Dependent Transport in InAs/GaSb/AlSb Resonant Tunneling Structures","year":2002,"lang":"en","type":"article","venue":"Journal of Computational Electronics","topic":"Semiconductor Quantum Structures and Devices","field":"Physics and Astronomy","cited_by":2,"is_retracted":false,"has_abstract":false,"route_ca_aff":false,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"","funders":"McGill University","keywords":"Quantum tunnelling; Heterojunction; Condensed matter physics; Diode; Simple (philosophy); Spin (aerodynamics); Resonant-tunneling diode; Semiconductor; Magnetic field; Physics; Materials science; Optoelectronics; Quantum mechanics; Quantum well","score_opus":0.01747295480620681,"score_gpt":0.2614536782101785,"score_spread":0.2439807234039717,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1512978613","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9557005,0.00044623655,0.020163719,0.0007971871,0.00007244705,0.000040773626,0.00017657153,0.00016406373,0.022438467],"genre_scores_gemma":[0.99249893,0.000121898396,0.003990506,0.00004932535,0.000013785507,0.00002571709,0.00005188103,0.000043151726,0.0032048307],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9999131,0.00002149305,0.0000029675812,0.000010124827,0.000024826313,0.000027467386],"domain_scores_gemma":[0.9997502,0.0001120732,0.000035897177,0.000022778824,0.00004676292,0.000032382617],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00030883407,0.000332461,0.0005456268,0.00036894894,0.00067242235,0.0009275904,0.0012777067,0.0015003612,0.0018759221],"category_scores_gemma":[0.00073353964,0.0003373271,0.00043262015,0.00040020628,0.0007346069,0.0007919182,0.0003887713,0.00045582702,0.00025529688],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000170007,0.0001955459,0.001327318,0.00010621998,0.00004412934,0.0002670635,0.0001063118,0.9041448,0.020225428,0.07029633,0.0008289301,0.0022878437],"study_design_scores_gemma":[0.000008859016,0.000008357254,0.0000912556,0.0000025894308,0.00000438128,0.0000066066073,0.00001441988,0.99801874,0.00044704718,0.0013123568,0.00008169457,0.0000036946642],"about_ca_topic_score_codex":0.013826339,"about_ca_topic_score_gemma":0.012229289,"teacher_disagreement_score":0.013826339,"about_ca_system_score_codex":0.001749453,"about_ca_system_score_gemma":0.0009415752,"threshold_uncertainty_score":0.027491748},"labels":[],"label_agreement":null},{"id":"W1978433622","doi":"10.1007/s10825-015-0690-4","title":"Quasi-3D subthreshold current and subthreshold swing models of dual-metal quadruple-gate (DMQG) MOSFETs","year":2015,"lang":"en","type":"article","venue":"Journal of Computational Electronics","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":10,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Memorial University of Newfoundland","funders":"","keywords":"Subthreshold conduction; Subthreshold slope; Current (fluid); Physics; Cathode; Poisson's equation; Subthreshold swing; Channel (broadcasting); MOSFET; Transistor; Electrical engineering; Computational physics; Quantum mechanics; Engineering; Voltage","score_opus":0.03818318936558215,"score_gpt":0.26969085286955174,"score_spread":0.2315076635039696,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1978433622","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.7446193,0.0030444558,0.16733973,0.0019338336,0.00028221443,0.00015996107,0.0018070027,0.0005430156,0.080270514],"genre_scores_gemma":[0.9836647,0.0005094584,0.005729397,0.00017038101,0.000037321384,0.00004878575,0.00020453581,0.00005888165,0.009576596],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99994063,0.00001328569,0.0000026225873,0.000009203264,0.000018734272,0.00001549863],"domain_scores_gemma":[0.9998746,0.00003749107,0.000014944352,0.000014750426,0.00003659431,0.000021649344],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00024617746,0.0003762152,0.0005496282,0.0004467625,0.00040613284,0.000771323,0.0012751409,0.0012105082,0.0027195287],"category_scores_gemma":[0.00032983968,0.0002577146,0.00069084065,0.0003518474,0.00056262437,0.0007651464,0.0003070008,0.00036366287,0.00052427716],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00020500435,0.00009002931,0.0011472007,0.00017968442,0.00006521188,0.00064971804,0.00030871865,0.754857,0.03155733,0.2024679,0.0030186072,0.00545363],"study_design_scores_gemma":[0.0000039977217,0.000009407947,0.00012266246,0.000005527193,0.000004059468,0.000027928947,0.000012127288,0.9942211,0.00020504087,0.0050612167,0.00032192428,0.0000051511734],"about_ca_topic_score_codex":0.0074094217,"about_ca_topic_score_gemma":0.0098020015,"teacher_disagreement_score":0.0074094217,"about_ca_system_score_codex":0.0012214826,"about_ca_system_score_gemma":0.0006053062,"threshold_uncertainty_score":0.014732599},"labels":[],"label_agreement":null},{"id":"W1983277460","doi":"10.1007/s10825-014-0573-0","title":"Calculating the steady-state polarizations of quantum cellular automata (QCA) circuits","year":2014,"lang":"en","type":"article","venue":"Journal of Computational Electronics","topic":"Quantum-Dot Cellular Automata","field":"Computer Science","cited_by":2,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of British Columbia","funders":"","keywords":"Cellular automaton; Electronic circuit; Quantum dot cellular automaton; Simulated annealing; Boltzmann constant; Monte Carlo method; Boltzmann machine; Steady state (chemistry); Statistical physics; Computer science; Algorithm; Mathematics; Physics; Quantum mechanics","score_opus":0.010365419672883793,"score_gpt":0.23420511810201278,"score_spread":0.22383969842912899,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1983277460","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.66459936,0.00027682565,0.31095442,0.00084111135,0.00014097636,0.000083197556,0.00022756035,0.00067875476,0.022197895],"genre_scores_gemma":[0.9806145,0.000071607035,0.018023001,0.000045039713,0.000011814255,0.000031178675,0.00006160979,0.000040203588,0.0011011184],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9997993,0.00006023218,0.000008259874,0.000028159242,0.00006530831,0.00003874655],"domain_scores_gemma":[0.9978131,0.0015567286,0.00007645347,0.00013822578,0.00032997818,0.000085486354],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00065341033,0.0002979718,0.00044273073,0.0005341542,0.00058383186,0.0013537155,0.0007070006,0.0011266368,0.0031585654],"category_scores_gemma":[0.0051340307,0.00035637323,0.00034306393,0.00045069243,0.00089451857,0.0013163722,0.0006021463,0.00079801516,0.0003300045],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00010381026,0.00010564976,0.0029452115,0.00010084209,0.000031922926,0.00013148977,0.00012615001,0.79200053,0.008401296,0.17452136,0.0011685343,0.020363253],"study_design_scores_gemma":[0.00000654186,0.000009452117,0.0001296238,0.000003835253,0.0000034335637,0.0000074358677,0.000014665787,0.978147,0.0012718025,0.020245511,0.00015598815,0.000004704633],"about_ca_topic_score_codex":0.002693681,"about_ca_topic_score_gemma":0.0028086102,"teacher_disagreement_score":0.0031585654,"about_ca_system_score_codex":0.0011342532,"about_ca_system_score_gemma":0.0010044699,"threshold_uncertainty_score":0.010566473},"labels":[],"label_agreement":null},{"id":"W1987360905","doi":"10.1007/s10825-013-0502-7","title":"Underlying design advantages for GaN MOSFETs compared with GaN HFETs for power applications","year":2013,"lang":"en","type":"article","venue":"Journal of Computational Electronics","topic":"Silicon Carbide Semiconductor Technologies","field":"Engineering","cited_by":5,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Alberta","funders":"","keywords":"Materials science; Optoelectronics; MOSFET; Threshold voltage; Breakdown voltage; Power semiconductor device; Gallium nitride; Voltage; Power (physics); Power MOSFET; Wide-bandgap semiconductor; Transistor; Electrical engineering; Nanotechnology; Physics; Engineering","score_opus":0.024597298409798476,"score_gpt":0.2701211913639919,"score_spread":0.2455238929541934,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1987360905","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.58911425,0.008373691,0.161921,0.002749967,0.0013921914,0.00015245596,0.0010447557,0.0007128611,0.2345389],"genre_scores_gemma":[0.96350956,0.00094907515,0.020548511,0.00025223623,0.00019031475,0.000055223412,0.0002264192,0.00009930162,0.014169386],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99980134,0.000021761625,0.0000073037954,0.00003210953,0.000092073155,0.00004545597],"domain_scores_gemma":[0.9998105,0.000055907993,0.0000238726,0.0000335215,0.00006142388,0.000014888246],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00021393874,0.00034664947,0.0003492058,0.0001973974,0.00033388173,0.00096282735,0.0005724519,0.0005793753,0.0041444995],"category_scores_gemma":[0.00059027254,0.00016731578,0.00028234886,0.00017900202,0.00027011297,0.0008808677,0.00033072985,0.0004307977,0.0009077628],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00053287455,0.00014214223,0.0028845924,0.0009876799,0.00012021525,0.00047688917,0.00020263498,0.016939592,0.64341813,0.24455836,0.00715988,0.08257706],"study_design_scores_gemma":[0.00022995977,0.002871315,0.0148359975,0.00022038275,0.00040607873,0.0059749708,0.0005238607,0.17474154,0.5140457,0.120152324,0.16585785,0.0001399241],"about_ca_topic_score_codex":0.00054445607,"about_ca_topic_score_gemma":0.0014395871,"teacher_disagreement_score":0.0041444995,"about_ca_system_score_codex":0.000490833,"about_ca_system_score_gemma":0.00031856608,"threshold_uncertainty_score":0.013864696},"labels":[],"label_agreement":null},{"id":"W2002770277","doi":"10.1007/s10825-009-0263-5","title":"Basis-set choice for DFT/NEGF simulations of carbon nanotubes","year":2009,"lang":"en","type":"article","venue":"Journal of Computational Electronics","topic":"Carbon Nanotubes in Composites","field":"Materials Science","cited_by":50,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of British Columbia","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Carbon nanotube; Basis set; Zigzag; Materials science; Conductance; Ab initio; Band gap; Density functional theory; Basis (linear algebra); Ab initio quantum chemistry methods; Molecular physics; Graphene; Condensed matter physics; Nanotechnology; Computational chemistry; Physics; Molecule; Quantum mechanics; Chemistry; Mathematics; Optoelectronics","score_opus":0.014225731270958927,"score_gpt":0.2953341540871351,"score_spread":0.28110842281617615,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2002770277","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.6600336,0.0018127481,0.2625256,0.0033285576,0.0010308102,0.0006468912,0.0034836957,0.0013844505,0.06575366],"genre_scores_gemma":[0.90242237,0.00034752328,0.0889269,0.00069567154,0.000109324064,0.001423568,0.0013546335,0.0006843466,0.004035639],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99903274,0.00051854964,0.000030920026,0.000034972614,0.00027611936,0.00010670569],"domain_scores_gemma":[0.9982614,0.00085926417,0.00004041379,0.0002088423,0.00050194794,0.0001281426],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0019423631,0.00065898814,0.0017024948,0.0010893916,0.0019128424,0.0012278886,0.0032402172,0.0025384366,0.0053446093],"category_scores_gemma":[0.005519682,0.0006141593,0.0006981256,0.0015845244,0.0007774171,0.0010899372,0.0011817742,0.0020838145,0.0009135524],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0007232708,0.0002651284,0.0014115011,0.00028977924,0.000086072694,0.00034163462,0.00014974283,0.8932631,0.0025333117,0.07323317,0.007464733,0.020238591],"study_design_scores_gemma":[0.00008138503,0.000023564487,0.00016933908,0.00001668563,0.000007770439,0.000011435353,0.000037618687,0.9917834,0.0007051352,0.0065171258,0.0006337314,0.000012804693],"about_ca_topic_score_codex":0.0068183467,"about_ca_topic_score_gemma":0.009482962,"teacher_disagreement_score":0.0068183467,"about_ca_system_score_codex":0.0012631556,"about_ca_system_score_gemma":0.0016572381,"threshold_uncertainty_score":0.017879486},"labels":[],"label_agreement":null},{"id":"W2017165811","doi":"10.1007/s10825-013-0439-x","title":"First principles modeling of disorder scattering in graphene","year":2013,"lang":"en","type":"article","venue":"Journal of Computational Electronics","topic":"Graphene research and applications","field":"Materials Science","cited_by":5,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McGill University","funders":"Natural Sciences and Engineering Research Council of Canada; Fonds Québécois de la Recherche sur la Nature et les Technologies","keywords":"Graphene; Non-equilibrium thermodynamics; Scattering; Impurity; Formalism (music); Statistical physics; Physics; Quantum; Carrier scattering; Condensed matter physics; Materials science; Nanotechnology; Quantum mechanics","score_opus":0.01867151894275677,"score_gpt":0.2695673941893707,"score_spread":0.25089587524661394,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2017165811","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.6595132,0.0020680032,0.18046114,0.004035242,0.00061147666,0.00018478447,0.00081828056,0.0007971867,0.15151067],"genre_scores_gemma":[0.9756975,0.0004689819,0.012038916,0.0002708366,0.000096265685,0.00009695615,0.00018779494,0.00013389828,0.011008843],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9996909,0.00008430242,0.000008823589,0.000021601196,0.00011331351,0.00008106094],"domain_scores_gemma":[0.99947685,0.00023827849,0.000039148206,0.00007447738,0.000103446764,0.00006777117],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00054901507,0.0007150713,0.0012022537,0.0010283034,0.0011808336,0.0014951754,0.0021849817,0.0024583298,0.0024469015],"category_scores_gemma":[0.0015181653,0.00056444923,0.0008558566,0.0009163604,0.0014701631,0.0011185803,0.0009202992,0.0010934372,0.00034350672],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000065320986,0.00010441869,0.00048340857,0.000074836054,0.00002885539,0.00014879095,0.00008768081,0.8945112,0.0021785856,0.09926669,0.00093765766,0.0021125304],"study_design_scores_gemma":[0.000008112864,0.0000033153021,0.00005870973,0.000003297527,0.0000020624025,0.000006920636,0.000009674776,0.9933216,0.0001229488,0.0063340818,0.00012420201,0.0000049620144],"about_ca_topic_score_codex":0.015842022,"about_ca_topic_score_gemma":0.013078691,"teacher_disagreement_score":0.015842022,"about_ca_system_score_codex":0.001309123,"about_ca_system_score_gemma":0.0011481642,"threshold_uncertainty_score":0.031499624},"labels":[],"label_agreement":null},{"id":"W2026303729","doi":"10.1007/s10825-009-0268-0","title":"Architecture for an external input into a molecular QCA circuit","year":2009,"lang":"en","type":"article","venue":"Journal of Computational Electronics","topic":"Quantum-Dot Cellular Automata","field":"Computer Science","cited_by":18,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of British Columbia","funders":"","keywords":"Quantum dot cellular automaton; CMOS; Computer science; Polarization (electrochemistry); Cellular automaton; Coherence (philosophical gambling strategy); Voltage; Electronic circuit; Electronic engineering; Quantum cellular automaton; Topology (electrical circuits); Physics; Optoelectronics; Electrical engineering; Chemistry; Engineering; Algorithm; Quantum mechanics","score_opus":0.010700063628714819,"score_gpt":0.26617508229515296,"score_spread":0.2554750186664381,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2026303729","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.25820705,0.00048115503,0.65354925,0.0040571583,0.0010430546,0.0004672565,0.0012325136,0.008998608,0.07196388],"genre_scores_gemma":[0.8899267,0.00014822697,0.08936655,0.00041470982,0.00008707626,0.00021570806,0.00018262996,0.00019268278,0.019465664],"study_design_codex":"bench_or_experimental","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9998548,0.00001647563,0.0000065334584,0.000042700638,0.00005253991,0.000026883428],"domain_scores_gemma":[0.9998342,0.00003632635,0.000011580221,0.00003365905,0.00005795387,0.000026319854],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00014520895,0.000305259,0.00038304395,0.00027937602,0.000879942,0.0011521154,0.0015037826,0.0009470202,0.011814729],"category_scores_gemma":[0.00035870157,0.0002367077,0.00033289104,0.000270967,0.0004640885,0.00070784165,0.0006292237,0.00070131774,0.002416206],"study_design_candidate":"simulation_or_modeling","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00052879675,0.00030053436,0.0010980505,0.00039693166,0.00009799715,0.00061106944,0.0004167102,0.03185446,0.71371675,0.18611817,0.0074823475,0.057378136],"study_design_scores_gemma":[0.00019481848,0.000514219,0.001130384,0.00007903678,0.00013939005,0.00036243367,0.000078357414,0.55160266,0.3758485,0.03412594,0.035828892,0.000095430245],"about_ca_topic_score_codex":0.0013181192,"about_ca_topic_score_gemma":0.002541731,"teacher_disagreement_score":0.011814729,"about_ca_system_score_codex":0.000720021,"about_ca_system_score_gemma":0.00064950815,"threshold_uncertainty_score":0.039524257},"labels":[],"label_agreement":null},{"id":"W2033534171","doi":"10.1007/s10825-006-0104-8","title":"Developing a full 3D NEGF simulator with random dopant and interface roughness","year":2006,"lang":"en","type":"article","venue":"Journal of Computational Electronics","topic":"Quantum and electron transport phenomena","field":"Physics and Astronomy","cited_by":7,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Dopant; Impurity; Surface finish; Materials science; Condensed matter physics; Nanowire; Electron mobility; Doping; Computational physics; Nanotechnology; Optoelectronics; Physics; Quantum mechanics","score_opus":0.005245026713691753,"score_gpt":0.22796958044022814,"score_spread":0.22272455372653638,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2033534171","genre_codex":"methods","genre_gemma":"methods","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"methods","genre_consensus":"methods","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.35917065,0.0003867484,0.57314575,0.001111913,0.0004581448,0.00039617714,0.002806062,0.0053262548,0.0571983],"genre_scores_gemma":[0.76765794,0.0001849213,0.21898767,0.00045337316,0.00006574835,0.00054762943,0.0010084187,0.0010643282,0.010029998],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99987125,0.000033446257,0.0000045375878,0.000012977597,0.000054329706,0.000023408891],"domain_scores_gemma":[0.9994324,0.00026658364,0.00003188956,0.00008495737,0.00013642001,0.000047757036],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00033381872,0.00062252,0.0008455801,0.00032982617,0.0006332313,0.0006587426,0.0020871914,0.0018852098,0.0069846003],"category_scores_gemma":[0.0014522757,0.0006441226,0.0008064559,0.00039159786,0.00038537488,0.00084401487,0.0006853339,0.0007730843,0.0010680777],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000046084286,0.000048230562,0.0006554776,0.000053929398,0.000036765083,0.00009375516,0.00003234812,0.9865043,0.0021823358,0.0045439755,0.0010732574,0.0047295964],"study_design_scores_gemma":[0.000014726976,0.000009455857,0.000036466234,0.000002006435,0.0000038605986,0.000007653366,0.000003904378,0.9983773,0.00041927953,0.0006553327,0.00046546687,0.0000044808335],"about_ca_topic_score_codex":0.010666239,"about_ca_topic_score_gemma":0.010657865,"teacher_disagreement_score":0.010666239,"about_ca_system_score_codex":0.0007013936,"about_ca_system_score_gemma":0.0015273329,"threshold_uncertainty_score":0.023365796},"labels":[],"label_agreement":null},{"id":"W2037677329","doi":"10.1007/s10825-005-7099-4","title":"Three-Dimensional Finite-Difference Time-Domain Simulation of Facet Reflection Through Parallel Computing","year":2005,"lang":"en","type":"article","venue":"Journal of Computational Electronics","topic":"Electromagnetic Simulation and Numerical Methods","field":"Engineering","cited_by":7,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McMaster University","funders":"","keywords":"Finite-difference time-domain method; Facet (psychology); Reflection (computer programming); Computer science; Ridge; Optics; Diode; Finite difference method; Waveguide; Limit (mathematics); Domain (mathematical analysis); Optoelectronics; Materials science; Physics; Mathematics; Mathematical analysis","score_opus":0.02016456750422924,"score_gpt":0.30383784070034453,"score_spread":0.2836732731961153,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2037677329","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.6482029,0.00021412908,0.3086892,0.000498427,0.00013395358,0.0001076722,0.00026660945,0.0013289937,0.040558152],"genre_scores_gemma":[0.9712747,0.00004770458,0.026687644,0.000044991335,0.000008103171,0.000028986045,0.00007474206,0.000103461556,0.0017296933],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9998141,0.000034377128,0.000006327557,0.000018228397,0.00007994629,0.000047042395],"domain_scores_gemma":[0.99920005,0.00042698215,0.00006755227,0.0000816418,0.00016069181,0.00006314665],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00027948018,0.0003605208,0.0006593283,0.00026552734,0.0006407709,0.0010322492,0.0010381131,0.00089699356,0.002324215],"category_scores_gemma":[0.0016931848,0.0003603447,0.00037632926,0.00055100146,0.00082471984,0.0007299734,0.0005112209,0.000582247,0.00021837237],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000087074826,0.00006090832,0.00073758315,0.000031474672,0.000013635741,0.00010985457,0.0000859104,0.98747337,0.003532012,0.003927305,0.0003573256,0.003583528],"study_design_scores_gemma":[0.000006521907,0.0000055562678,0.000061532046,9.4179006e-7,0.000001295647,0.0000064581072,0.000008638153,0.998966,0.00061420136,0.00024751227,0.00007886336,0.0000025506247],"about_ca_topic_score_codex":0.010690914,"about_ca_topic_score_gemma":0.006948446,"teacher_disagreement_score":0.010690914,"about_ca_system_score_codex":0.0007232078,"about_ca_system_score_gemma":0.0012544994,"threshold_uncertainty_score":0.0212574},"labels":[],"label_agreement":null},{"id":"W2039352173","doi":"10.1007/s10825-010-0318-7","title":"Study the effect of distribution of density of states on the subthreshold characteristics of an organic field-effect transistor (OFET)","year":2010,"lang":"en","type":"article","venue":"Journal of Computational Electronics","topic":"Organic Electronics and Photovoltaics","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of British Columbia","funders":"","keywords":"Subthreshold conduction; Subthreshold swing; Transistor; Materials science; Organic field-effect transistor; Swing; Organic semiconductor; Semiconductor; Field-effect transistor; Optoelectronics; Chemical physics; Physics; Voltage; Quantum mechanics","score_opus":0.0033717810167507097,"score_gpt":0.21230559652361655,"score_spread":0.20893381550686585,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2039352173","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99561715,0.00036817652,0.0022695228,0.00012261793,0.00001523968,0.0000073514225,0.000105655505,0.000031482065,0.0014628859],"genre_scores_gemma":[0.9987502,0.00017615364,0.00051673705,0.000013958421,0.0000074617205,0.0000031414402,0.00003663119,0.000006785595,0.00048881565],"study_design_codex":"bench_or_experimental","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.999931,0.0000072881603,0.000001999174,0.00001612282,0.000024968296,0.000018710629],"domain_scores_gemma":[0.9994265,0.00038737647,0.000068218025,0.000025086007,0.000064604785,0.000028254275],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00016860435,0.00016716779,0.00018288048,0.0001850478,0.0002184992,0.0002514511,0.00029395407,0.00030643644,0.0014980364],"category_scores_gemma":[0.00082524185,0.000102533755,0.00016054322,0.00023292367,0.00020384675,0.000430948,0.00014928407,0.00024386166,0.00015578645],"study_design_candidate":"simulation_or_modeling","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00057544943,0.00017372204,0.005089982,0.00022284048,0.000069237685,0.00056761655,0.00020755592,0.014535287,0.96614397,0.002617708,0.00041673714,0.009379841],"study_design_scores_gemma":[0.000053396587,0.0011616804,0.017813716,0.00003174345,0.00012312438,0.00055302744,0.00026445976,0.24859531,0.72815907,0.0013277008,0.0018760741,0.00004078179],"about_ca_topic_score_codex":0.0011036845,"about_ca_topic_score_gemma":0.0014365995,"teacher_disagreement_score":0.0014980364,"about_ca_system_score_codex":0.00033178783,"about_ca_system_score_gemma":0.00013220828,"threshold_uncertainty_score":0.0050114393},"labels":[],"label_agreement":null},{"id":"W2070509553","doi":"10.1007/s10825-006-0080-z","title":"Issues in the modeling of carbon nanotube FETs: Structure, gate thickness, and azimuthal asymmetry","year":2006,"lang":"en","type":"article","venue":"Journal of Computational Electronics","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":7,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of British Columbia","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Carbon nanotube; Planar; Coaxial; Asymmetry; Materials science; Carbon nanotube field-effect transistor; Transistor; Field-effect transistor; Azimuth; Nanotube; Current (fluid); Optoelectronics; Condensed matter physics; Nanotechnology; Physics; Electrical engineering; Computer science; Optics; Voltage; Engineering","score_opus":0.007651393335260923,"score_gpt":0.23255500629330608,"score_spread":0.22490361295804517,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2070509553","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.5308856,0.0056071724,0.37720883,0.0074963234,0.0004930165,0.00008134535,0.00057397835,0.00036142202,0.07729234],"genre_scores_gemma":[0.9803345,0.0013775964,0.011208086,0.00021481991,0.00013455901,0.000046510464,0.00008290019,0.00012879248,0.0064721974],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.999819,0.00005855247,0.00000767544,0.000019907307,0.00006604719,0.00002896554],"domain_scores_gemma":[0.9995524,0.00023559823,0.00006124661,0.000043373147,0.0000783939,0.00002892809],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00047581212,0.0005602337,0.00070453284,0.00029367817,0.00062760874,0.0010844624,0.0012177455,0.002025311,0.0010237674],"category_scores_gemma":[0.0019615951,0.00059211766,0.00051563344,0.00052308844,0.00083064556,0.0018937124,0.0004864872,0.000824296,0.000280934],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00003427134,0.000025255287,0.00044386613,0.000048017657,0.000013657078,0.00020103391,0.000039316652,0.9405564,0.008762017,0.046827137,0.00040843547,0.002640629],"study_design_scores_gemma":[0.000005489484,0.000008930184,0.00016701619,0.000006144144,0.0000051226302,0.00003899023,0.000011435984,0.9885914,0.0010681088,0.009585831,0.0005035035,0.000008067987],"about_ca_topic_score_codex":0.003279119,"about_ca_topic_score_gemma":0.0041310717,"teacher_disagreement_score":0.003279119,"about_ca_system_score_codex":0.00090377696,"about_ca_system_score_gemma":0.0007870957,"threshold_uncertainty_score":0.0065573454},"labels":[],"label_agreement":null},{"id":"W2070523736","doi":"10.1007/s10825-007-0151-9","title":"Engineering model of a biased metal–molecule–metal junction","year":2007,"lang":"en","type":"article","venue":"Journal of Computational Electronics","topic":"Molecular Junctions and Nanostructures","field":"Engineering","cited_by":3,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Lockheed Martin (Canada)","funders":"Vanderbilt University; U.S. Department of Energy","keywords":"Density functional theory; Construct (python library); Computer science; Point (geometry); Metal; Quantum; Materials science; Statistical physics; Computational chemistry; Chemistry; Quantum mechanics; Physics; Mathematics","score_opus":0.005989740304040821,"score_gpt":0.20463057224713602,"score_spread":0.1986408319430952,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2070523736","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.5423427,0.0011514755,0.11874205,0.0054073287,0.0010649875,0.0002193376,0.00081616646,0.00046964944,0.32978624],"genre_scores_gemma":[0.96085113,0.00030061018,0.011229159,0.0002983758,0.00009945884,0.000101439735,0.00012538553,0.00005070403,0.02694373],"study_design_codex":"theoretical_or_conceptual","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9998636,0.000028316983,0.0000045928796,0.000027589651,0.000044798522,0.000030925625],"domain_scores_gemma":[0.99988675,0.00002586729,0.000016594297,0.000017615936,0.00002828352,0.000024884255],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00018501589,0.00032366105,0.00092419586,0.0005413768,0.0010743026,0.0012097959,0.0019187899,0.0031263237,0.009643953],"category_scores_gemma":[0.00042205784,0.0003317293,0.00061567925,0.0004602377,0.0009879482,0.0006764454,0.0006600705,0.0005783003,0.0013331128],"study_design_candidate":"simulation_or_modeling","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00025158163,0.00024383642,0.0008143266,0.00023725584,0.00008689166,0.0019451545,0.00017098423,0.28797153,0.0764698,0.6231759,0.0037190828,0.004913604],"study_design_scores_gemma":[0.000084812214,0.0000967086,0.0003356057,0.00001601228,0.000033348366,0.00025943082,0.00006956817,0.951072,0.0043493127,0.04020038,0.0034486083,0.000034172655],"about_ca_topic_score_codex":0.0022134064,"about_ca_topic_score_gemma":0.0016180659,"teacher_disagreement_score":0.009643953,"about_ca_system_score_codex":0.0009792714,"about_ca_system_score_gemma":0.0007641074,"threshold_uncertainty_score":0.032262206},"labels":[],"label_agreement":null},{"id":"W2090145479","doi":"10.1007/s10825-014-0557-0","title":"Analytical subthreshold current and subthreshold swing models of short-channel dual-metal-gate (DMG) fully-depleted recessed-source/drain (Re-S/D) SOI MOSFETs","year":2014,"lang":"en","type":"article","venue":"Journal of Computational Electronics","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":9,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Memorial University of Newfoundland","funders":"Science and Engineering Research Board; Department of Science and Technology, Ministry of Science and Technology, India","keywords":"Subthreshold conduction; Subthreshold swing; Silicon on insulator; Cathode; Optoelectronics; Subthreshold slope; Channel (broadcasting); Current (fluid); Materials science; Electrical engineering; Swing; MOSFET; Physics; Silicon; Transistor; Voltage; Engineering; Acoustics","score_opus":0.027434091220639414,"score_gpt":0.26042174380507804,"score_spread":0.23298765258443863,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2090145479","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.6141981,0.0053612445,0.2726607,0.0013607066,0.00025664305,0.0002288279,0.00191652,0.0010115115,0.10300576],"genre_scores_gemma":[0.9846331,0.0006685116,0.0036322214,0.000085736196,0.000031625823,0.00004039095,0.00016589026,0.000058554615,0.01068407],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9999261,0.000011236418,0.0000031850454,0.000011365519,0.000026469585,0.000021602116],"domain_scores_gemma":[0.9998535,0.00004768166,0.00001963379,0.000012977069,0.000053916643,0.000012297907],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00024404311,0.00044268413,0.0005826423,0.00050569995,0.00035583274,0.00062406866,0.0011763346,0.0007734789,0.002137917],"category_scores_gemma":[0.00045794627,0.0002612531,0.000845639,0.0003370087,0.0004051655,0.0006820292,0.00021910963,0.00038566595,0.0005277804],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00010940364,0.000056431596,0.00077337504,0.00013934518,0.000057986927,0.00035848512,0.00030449053,0.9217212,0.022986839,0.044818357,0.0018736117,0.0068004136],"study_design_scores_gemma":[0.0000020893544,0.0000072512303,0.00010849129,0.0000065536024,0.000005457077,0.000020139598,0.000010502983,0.9976889,0.00032759315,0.0015773848,0.00024267072,0.000002929745],"about_ca_topic_score_codex":0.010159085,"about_ca_topic_score_gemma":0.015648283,"teacher_disagreement_score":0.010159085,"about_ca_system_score_codex":0.0017357334,"about_ca_system_score_gemma":0.00075188826,"threshold_uncertainty_score":0.020199895},"labels":[],"label_agreement":null},{"id":"W2114620368","doi":"10.1007/s10825-009-0300-4","title":"Analysis of field-driven clocking for molecular quantum-dot cellular automata based circuits","year":2009,"lang":"en","type":"article","venue":"Journal of Computational Electronics","topic":"Quantum-Dot Cellular Automata","field":"Computer Science","cited_by":11,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of British Columbia","funders":"Natural Sciences and Engineering Research Council of Canada; University of British Columbia","keywords":"Quantum dot cellular automaton; Cellular automaton; Electronic circuit; Computation; Computer science; Quantum cellular automaton; Quantum computer; Quantum dot; Quantum; Field (mathematics); Topology (electrical circuits); Electronic engineering; Biological system; Physics; Algorithm; Optoelectronics; Mathematics; Quantum mechanics","score_opus":0.011655866952910111,"score_gpt":0.2644437930416633,"score_spread":0.2527879260887532,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2114620368","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.42028525,0.0007719934,0.551259,0.0010143386,0.0001640371,0.00015944861,0.00020219207,0.00034294493,0.02580081],"genre_scores_gemma":[0.98835796,0.00014005273,0.008394414,0.0000475101,0.00001945854,0.000041358744,0.000037396665,0.00003555306,0.002926389],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99979645,0.000047391393,0.000007087734,0.000030158899,0.000074551084,0.00004431993],"domain_scores_gemma":[0.9988581,0.0007105008,0.00010813813,0.000063291285,0.0002041023,0.00005596879],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0005512347,0.000374002,0.000606771,0.00063800946,0.000493577,0.0009163953,0.0009371761,0.0008415619,0.003743432],"category_scores_gemma":[0.0030656676,0.00028873552,0.00049486285,0.00034362206,0.00096893276,0.00078585424,0.00043172922,0.00058013154,0.00018082125],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000074376054,0.00006270227,0.00066612585,0.000069345275,0.000026832178,0.000104339924,0.00008208266,0.74819565,0.011818309,0.23066224,0.0007551961,0.007482787],"study_design_scores_gemma":[0.0000026662412,0.0000055460227,0.00005320332,0.0000018408182,0.0000021212877,0.0000072041194,0.0000032073074,0.99368286,0.0003536721,0.005792099,0.00009304459,0.0000024979436],"about_ca_topic_score_codex":0.003862351,"about_ca_topic_score_gemma":0.0027942106,"teacher_disagreement_score":0.003862351,"about_ca_system_score_codex":0.0015877723,"about_ca_system_score_gemma":0.0011436674,"threshold_uncertainty_score":0.012523055},"labels":[],"label_agreement":null},{"id":"W2132090531","doi":"10.1007/s10825-004-7051-z","title":"Robust Computational Models of Quantum Transport in Electronic Devices","year":2004,"lang":"en","type":"article","venue":"Journal of Computational Electronics","topic":"Semiconductor materials and interfaces","field":"Physics and Astronomy","cited_by":1,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Wilfrid Laurier University","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Quantum tunnelling; Nanoscopic scale; Quantum; Materials science; Leakage (economics); Schottky barrier; Optoelectronics; Vertical-cavity surface-emitting laser; Tunnel junction; Laser; Physics; Nanotechnology; Optics; Quantum mechanics","score_opus":0.019183737451204122,"score_gpt":0.2482230880162263,"score_spread":0.22903935056502217,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2132090531","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.12461682,0.0012905354,0.8477632,0.00432984,0.00035436422,0.00008880303,0.0004949235,0.0006151729,0.020446444],"genre_scores_gemma":[0.94860834,0.00049877586,0.04313316,0.00023547589,0.00019151997,0.00016720447,0.0002687432,0.00021287597,0.006683904],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9992054,0.00037037168,0.000040824958,0.00009511914,0.00019091174,0.00009734539],"domain_scores_gemma":[0.9947461,0.0038216042,0.00034989254,0.00049774634,0.0004070973,0.00017756852],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0020629694,0.00084624114,0.002069624,0.00087966654,0.00089657615,0.0029074536,0.0029479058,0.002949964,0.004718685],"category_scores_gemma":[0.011711192,0.0010418281,0.0010002546,0.00082530745,0.0028357545,0.0037316016,0.0021008414,0.0024295903,0.0004148117],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000030795243,0.000024903811,0.00010560179,0.000020653017,0.000015813124,0.000015775317,0.000018762115,0.90531874,0.00017459327,0.09227044,0.00043731922,0.0015666605],"study_design_scores_gemma":[0.000003615908,0.0000022410738,0.000011146526,0.0000012551831,0.0000014400423,0.0000012529395,0.0000020394898,0.97940505,0.000032187294,0.020473663,0.00006430105,0.000001826993],"about_ca_topic_score_codex":0.0071192444,"about_ca_topic_score_gemma":0.005353593,"teacher_disagreement_score":0.0071192444,"about_ca_system_score_codex":0.0018807121,"about_ca_system_score_gemma":0.0014677766,"threshold_uncertainty_score":0.015785575},"labels":[],"label_agreement":null},{"id":"W2152935242","doi":"10.1007/s10825-013-0533-0","title":"Geometrical and physical optimization of a photovoltaic cell by means of a genetic algorithm","year":2013,"lang":"en","type":"article","venue":"Journal of Computational Electronics","topic":"Silicon and Solar Cell Technologies","field":"Engineering","cited_by":18,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McGill University","funders":"","keywords":"Genetic algorithm; Fitness function; Computer science; Photovoltaic system; Common emitter; Grid; Algorithm; Set (abstract data type); Software; Solar cell; Simulation software; Simulation; Mathematical optimization; Electronic engineering; Mathematics; Electrical engineering; Engineering","score_opus":0.0031944354777448864,"score_gpt":0.18663542818364573,"score_spread":0.18344099270590083,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2152935242","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.16405886,0.0005460875,0.8048903,0.00061008544,0.00019726233,0.00015944365,0.0001489463,0.00039148467,0.028997665],"genre_scores_gemma":[0.7843603,0.00027860462,0.21097949,0.00011498491,0.000052763702,0.00030260606,0.00010779327,0.00009770198,0.0037057546],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9998735,0.0000453677,0.0000043144237,0.000017918535,0.00004191379,0.000016956486],"domain_scores_gemma":[0.9997477,0.00013377129,0.000021593896,0.000020330326,0.00006463115,0.000012048193],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00036340833,0.00041321252,0.00074033096,0.0006437875,0.00064583175,0.00071970886,0.00090131105,0.0015528033,0.0023691638],"category_scores_gemma":[0.0010064873,0.00043535014,0.0007179658,0.0006916925,0.00078550086,0.0004515131,0.00047181145,0.00050950825,0.0002766623],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000013959709,0.000013914598,0.00013702184,0.000014168079,0.0000077366385,0.000023268567,0.000011032144,0.99187016,0.0010579487,0.0023404271,0.00014838134,0.004362025],"study_design_scores_gemma":[0.000010987525,0.000015423493,0.00008275327,0.000002492511,0.000004641452,0.000010579082,0.000006207916,0.998439,0.00026604754,0.0009076124,0.00025091294,0.0000033374483],"about_ca_topic_score_codex":0.00442764,"about_ca_topic_score_gemma":0.0034625893,"teacher_disagreement_score":0.00442764,"about_ca_system_score_codex":0.0007019925,"about_ca_system_score_gemma":0.0009529918,"threshold_uncertainty_score":0.008803725},"labels":[],"label_agreement":null},{"id":"W269712808","doi":"10.1023/a:1020796618175","title":"Theoretical Investigations of Spin Splittings and Optimization of the Rashba Coefficient in Asymmetric AlSb/InAs/GaSb Heterostructures","year":2002,"lang":"en","type":"article","venue":"Journal of Computational Electronics","topic":"Quantum and electron transport phenomena","field":"Physics and Astronomy","cited_by":7,"is_retracted":false,"has_abstract":false,"route_ca_aff":false,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"","funders":"Office of Naval Research; Jet Propulsion Laboratory; McGill University","keywords":"Spins; Heterojunction; Condensed matter physics; Rashba effect; Fermi gas; Spin (aerodynamics); Materials science; Physics; Constant (computer programming); Electron; Quantum mechanics; Spintronics; Ferromagnetism; Computer science; Thermodynamics","score_opus":0.005505819032097216,"score_gpt":0.2164405101352695,"score_spread":0.21093469110317228,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W269712808","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.95574814,0.0005973994,0.007560185,0.0007498401,0.00002411433,0.000026818612,0.00011566845,0.00008629919,0.035091434],"genre_scores_gemma":[0.9975604,0.00011533108,0.0012121091,0.00002204277,0.000006856735,0.000014447581,0.00003461312,0.000020560745,0.0010135744],"study_design_codex":"theoretical_or_conceptual","study_design_gemma":"theoretical_or_conceptual","domain_scores_codex":[0.9998529,0.000034031647,0.000003941508,0.000011075886,0.00005698972,0.000041021234],"domain_scores_gemma":[0.99962044,0.00018796221,0.000039956467,0.000046177534,0.00007576586,0.000029652318],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00056544464,0.00038340417,0.00060204335,0.00095063896,0.0009606503,0.0009140923,0.00095026987,0.0007764594,0.0034810565],"category_scores_gemma":[0.0011532826,0.00046018438,0.00035652664,0.00068012415,0.0011807493,0.0007293744,0.00045004714,0.00048363305,0.0002691731],"study_design_candidate":"theoretical_or_conceptual","study_design_consensus":"theoretical_or_conceptual","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0004287927,0.00023421692,0.0034354175,0.00041424207,0.000060504794,0.00051584665,0.00037784403,0.45231333,0.07694041,0.4563598,0.0016440877,0.0072754743],"study_design_scores_gemma":[0.00006044093,0.000038961272,0.0011160374,0.00002275202,0.000013126082,0.00005027501,0.00021418979,0.9691227,0.007627833,0.02121859,0.00049731275,0.000017842842],"about_ca_topic_score_codex":0.0037419456,"about_ca_topic_score_gemma":0.006160943,"teacher_disagreement_score":0.0037419456,"about_ca_system_score_codex":0.0012090114,"about_ca_system_score_gemma":0.0007822639,"threshold_uncertainty_score":0.011645317},"labels":[],"label_agreement":null},{"id":"W2766755124","doi":"10.1007/s10825-017-1084-6","title":"Design and simulation of a doping-less charge plasma based enhancement mode GaN MOSFET","year":2017,"lang":"en","type":"article","venue":"Journal of Computational Electronics","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":19,"is_retracted":false,"has_abstract":false,"route_ca_aff":false,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"","funders":"Institute of Population and Public Health; King Saud University","keywords":"Transconductance; Materials science; MOSFET; Doping; Cutoff frequency; Optoelectronics; Threshold voltage; Oscillation (cell signaling); Plasma; Voltage; Electrical engineering; Physics; Transistor","score_opus":0.023501659196800667,"score_gpt":0.29418070130155066,"score_spread":0.27067904210475,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2766755124","genre_codex":"empirical","genre_gemma":"methods","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"methods","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.7449492,0.0009323553,0.16713339,0.0010351036,0.00026324549,0.00024688,0.000975213,0.0009874569,0.08347722],"genre_scores_gemma":[0.980551,0.00012508026,0.014306654,0.000079751066,0.00001438281,0.00008767716,0.000083813065,0.00004708594,0.0047045792],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9999254,0.000016968139,0.0000020548423,0.000011796676,0.000023438037,0.000020391615],"domain_scores_gemma":[0.99984455,0.00006812223,0.00002156051,0.000010835456,0.000035577934,0.00001940173],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00016896035,0.0003460713,0.00062820234,0.0001970788,0.0003675377,0.0005672735,0.001163049,0.00087932765,0.003875067],"category_scores_gemma":[0.00031808447,0.0002853416,0.0005001549,0.00021964427,0.00031303006,0.00028387146,0.00027980492,0.000323992,0.00031865234],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00007708162,0.00004407692,0.0006079605,0.00006764842,0.000038640934,0.00015586783,0.00003342104,0.9868684,0.006626689,0.0026923236,0.00061043113,0.0021774324],"study_design_scores_gemma":[0.00001391348,0.00004436948,0.000137224,0.0000038543412,0.00000874232,0.000015790596,0.00000924187,0.99834406,0.00074027036,0.00026410815,0.000414772,0.0000036072804],"about_ca_topic_score_codex":0.006617674,"about_ca_topic_score_gemma":0.0073084836,"teacher_disagreement_score":0.006617674,"about_ca_system_score_codex":0.0010112296,"about_ca_system_score_gemma":0.000946199,"threshold_uncertainty_score":0.013158321},"labels":[],"label_agreement":null},{"id":"W2945739020","doi":"10.1007/s10825-019-01351-1","title":"Widely tunable electronic properties in graphene/two-dimensional silicon carbide van der Waals heterostructures","year":2019,"lang":"en","type":"article","venue":"Journal of Computational Electronics","topic":"Graphene research and applications","field":"Materials Science","cited_by":33,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Ottawa","funders":"","keywords":"Graphene; Materials science; Band gap; Heterojunction; Bilayer graphene; van der Waals force; Condensed matter physics; Density functional theory; Direct and indirect band gaps; Semimetal; Silicon carbide; Electronic band structure; Nanotechnology; Optoelectronics; Computational chemistry; Physics; Chemistry","score_opus":0.009935978163923154,"score_gpt":0.2586266437358439,"score_spread":0.2486906655719207,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2945739020","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9963786,0.00044233698,0.00046032784,0.000071132614,0.000033849345,0.0000027384299,0.00006645387,0.000037980037,0.0025065402],"genre_scores_gemma":[0.9992423,0.00008991203,0.00026300352,0.000011863458,0.0000043180785,0.000002376052,0.000024810322,0.0000073185183,0.00035416547],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99988055,0.000009021143,0.0000058057876,0.000022648655,0.000056560573,0.000025342828],"domain_scores_gemma":[0.999877,0.000040749317,0.000021328231,0.000016683314,0.000025619762,0.000018658035],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00011570168,0.00022538604,0.00021637834,0.00028015889,0.00025034018,0.00064126326,0.0004677186,0.00039817722,0.0010048068],"category_scores_gemma":[0.00020786744,0.00016371132,0.000108077074,0.00028944138,0.0003931985,0.0003265575,0.00035071615,0.00033090587,0.0001874609],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00013074497,0.000027708276,0.00037818696,0.000055067765,0.000017607112,0.00012526693,0.000052835716,0.0006884249,0.9949591,0.0018065792,0.00021223622,0.0015462817],"study_design_scores_gemma":[0.000045526394,0.00022476897,0.0055500334,0.000023701637,0.000037511974,0.00025042862,0.0002094454,0.024122482,0.9668578,0.001131803,0.0015013069,0.000045240915],"about_ca_topic_score_codex":0.00060001406,"about_ca_topic_score_gemma":0.0017461269,"teacher_disagreement_score":0.0010048068,"about_ca_system_score_codex":0.0003157134,"about_ca_system_score_gemma":0.00013420165,"threshold_uncertainty_score":0.0033614635},"labels":[],"label_agreement":null},{"id":"W2946173543","doi":"10.1007/s10825-019-01414-3","title":"Simudo: a device model for intermediate band materials","year":2019,"lang":"en","type":"preprint","venue":"Journal of Computational Electronics","topic":"Semiconductor Quantum Structures and Devices","field":"Physics and Astronomy","cited_by":2,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Ottawa","funders":"Army Research Office","keywords":"Benchmark (surveying); Semiconductor; Finite element method; Convergence (economics); Rate of convergence; Nonlinear system; Semiconductor device; Computer science; Applied mathematics; Diffusion; Mathematical analysis; Optoelectronics; Materials science; Physics; Mathematics; Telecommunications; Quantum mechanics; Layer (electronics)","score_opus":0.020017182584263056,"score_gpt":0.2997386471891508,"score_spread":0.2797214646048877,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2946173543","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.066910066,0.0022188274,0.7113214,0.0022725763,0.0012636604,0.00020604602,0.0030284103,0.002598762,0.2101802],"genre_scores_gemma":[0.781917,0.0012073852,0.13442273,0.0010636883,0.00031623058,0.00064685935,0.0017103808,0.0013357364,0.077380046],"study_design_codex":"theoretical_or_conceptual","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99988306,0.000028409175,0.000003651216,0.0000153453,0.000040688676,0.000028813765],"domain_scores_gemma":[0.99990666,0.000021940325,0.0000058861656,0.000025562389,0.00002470094,0.000015303149],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00022600903,0.0006081953,0.001128194,0.0006686851,0.0008187816,0.0015464025,0.0022919527,0.0018067997,0.01032211],"category_scores_gemma":[0.0005198526,0.0002600374,0.00086380244,0.00061679987,0.0005919382,0.0016604514,0.0009590225,0.0009454461,0.0018668559],"study_design_candidate":"simulation_or_modeling","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000115970855,0.00005706291,0.00014278255,0.00015822369,0.000021713566,0.00014051195,0.00005822906,0.10892701,0.004370338,0.8651468,0.010832583,0.010028854],"study_design_scores_gemma":[0.00004010923,0.000020289397,0.00006995281,0.000024923396,0.000013216308,0.00006570168,0.000018043855,0.77924156,0.0014638483,0.1993123,0.019713392,0.000016678609],"about_ca_topic_score_codex":0.0010638082,"about_ca_topic_score_gemma":0.0014252253,"teacher_disagreement_score":0.01032211,"about_ca_system_score_codex":0.00074313895,"about_ca_system_score_gemma":0.00048038582,"threshold_uncertainty_score":0.034530938},"labels":[],"label_agreement":null},{"id":"W3213451231","doi":"10.1007/s10825-021-01817-1","title":"Nanoelectronic circuit elements based on nanoscale metal–molecular networks","year":2021,"lang":"en","type":"article","venue":"Journal of Computational Electronics","topic":"Molecular Junctions and Nanostructures","field":"Engineering","cited_by":5,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Victoria","funders":"Compute Canada","keywords":"Materials science; Delocalized electron; Rectification; Chemical physics; Electronic circuit; Topology (electrical circuits); Nanotechnology; Fermi level; Conductance; Nanoelectronics; Fermi energy; Density functional theory; Nanoscopic scale; Molecular electronics; Molecular physics; Molecule; Voltage; Electron; Condensed matter physics; Physics; Computational chemistry; Chemistry; Quantum mechanics; Electrical engineering","score_opus":0.004170704926969944,"score_gpt":0.20162199082866342,"score_spread":0.19745128590169347,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3213451231","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.64957064,0.0013539923,0.18618232,0.0013533713,0.00072658836,0.00018348984,0.00023364642,0.0010508582,0.15934503],"genre_scores_gemma":[0.9615455,0.00023157567,0.025364144,0.00009096681,0.000040733576,0.00006342796,0.000054588494,0.000047342528,0.012561738],"study_design_codex":"theoretical_or_conceptual","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99994934,0.000010804478,0.0000022916909,0.000010584057,0.000017540373,0.000009515732],"domain_scores_gemma":[0.9999392,0.000023538872,0.000007962859,0.000012820646,0.000009733937,0.000006669544],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00005482289,0.00013431073,0.00023579293,0.00020563239,0.00033224205,0.0006128568,0.00064404274,0.00040115856,0.0049344064],"category_scores_gemma":[0.00030721014,0.00013789308,0.00011829467,0.0001476235,0.00032310854,0.00078326446,0.00038114053,0.00028940162,0.0006728163],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00019362113,0.00017558465,0.0005671337,0.00026046298,0.000053242056,0.00026902187,0.00020024742,0.06669274,0.2462785,0.64570034,0.0043670456,0.03524211],"study_design_scores_gemma":[0.00006992997,0.00032309524,0.0012191463,0.0000651819,0.000063231855,0.0002542782,0.000114953255,0.6312354,0.14857152,0.13934492,0.07868361,0.0000547543],"about_ca_topic_score_codex":0.00024593042,"about_ca_topic_score_gemma":0.0007242523,"teacher_disagreement_score":0.0049344064,"about_ca_system_score_codex":0.00030382324,"about_ca_system_score_gemma":0.00012282077,"threshold_uncertainty_score":0.016507208},"labels":[],"label_agreement":null},{"id":"W4308326889","doi":"10.1007/s10825-022-01970-1","title":"Systematic analysis of semiconductor photoconductivity dynamics under different laser excitations: two- and three-level models","year":2022,"lang":"en","type":"article","venue":"Journal of Computational Electronics","topic":"Terahertz technology and applications","field":"Engineering","cited_by":3,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Institut National de la Recherche Scientifique","funders":"","keywords":"Excitation; Electron; Laser; Electric field; Semiconductor; Physics; Population; Atomic physics; Materials science; Photoconductivity; Condensed matter physics; Computational physics; Optics; Optoelectronics; Quantum mechanics","score_opus":0.01854403443655724,"score_gpt":0.24313330834354338,"score_spread":0.22458927390698613,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4308326889","genre_codex":"empirical","genre_gemma":"methods","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"methods","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9400391,0.0013832899,0.04311628,0.00057721906,0.000060645685,0.0000974615,0.00078404404,0.0005598983,0.013382109],"genre_scores_gemma":[0.99366635,0.00032867424,0.0042798147,0.00006129499,0.000015080104,0.00008890278,0.0002678795,0.0000904231,0.0012016094],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99977833,0.00006320235,0.000009582326,0.00002913274,0.000056020144,0.000063852785],"domain_scores_gemma":[0.99889106,0.000565354,0.00013468415,0.0001922066,0.00016609795,0.000050578183],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0008557004,0.00062087184,0.0011518477,0.0008192803,0.00082261954,0.00074515113,0.0014223543,0.001067971,0.0027038686],"category_scores_gemma":[0.0014592675,0.00046059646,0.0015263516,0.0008379526,0.00067735335,0.0010531824,0.00052529987,0.0008445748,0.00024933022],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00034591067,0.0003607178,0.0052316897,0.00056602777,0.00029564786,0.00055345806,0.00034916252,0.8415196,0.031508986,0.10593243,0.002875604,0.010460836],"study_design_scores_gemma":[0.000029935054,0.000027210857,0.0010781647,0.00001842881,0.000042660216,0.000021055715,0.000030001818,0.9901618,0.002249097,0.0060774814,0.00024834898,0.000015822305],"about_ca_topic_score_codex":0.0048735114,"about_ca_topic_score_gemma":0.0079956725,"teacher_disagreement_score":0.0048735114,"about_ca_system_score_codex":0.0009968902,"about_ca_system_score_gemma":0.0013830746,"threshold_uncertainty_score":0.009690285},"labels":[],"label_agreement":null},{"id":"W4376616842","doi":"10.1007/s10825-023-02036-6","title":"Design considerations for engineering $$\\hbox {HfS}_2$$ negative capacitance FET through multilayered channel and $$\\hbox {Hf}_{1-x}{\\hbox {Zr}_{x}}\\hbox {O}_2$$/$$\\hbox {HfO}_2$$ double-gate stacks: an ab initio and NEGF study","year":2023,"lang":"en","type":"article","venue":"Journal of Computational Electronics","topic":"Ferroelectric and Negative Capacitance Devices","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Ontario Ministry of Research and Innovation; Natural Sciences and Engineering Research Council of Canada","keywords":"Materials science; Hysteresis; Negative impedance converter; Capacitance; Quantum capacitance; Subthreshold slope; Monolayer; MOSFET; Field-effect transistor; Ferroelectricity; Optoelectronics; Condensed matter physics; Dielectric; Transistor; Nanotechnology; Physics; Voltage; Electrode; Quantum mechanics","score_opus":0.05573219962828632,"score_gpt":0.28285423243598534,"score_spread":0.22712203280769902,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4376616842","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9452253,0.0017913724,0.030920548,0.0009115147,0.000109651686,0.00008513734,0.0004059563,0.00021200535,0.020338574],"genre_scores_gemma":[0.97606134,0.000610929,0.019785138,0.000073063944,0.000015294876,0.000056367604,0.00014929014,0.00004500292,0.0032036258],"study_design_codex":"bench_or_experimental","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9999492,0.000004076437,0.0000013569392,0.000006173879,0.000027348764,0.000011863103],"domain_scores_gemma":[0.9999676,0.0000081984535,0.000006504265,0.0000041800704,0.000009738225,0.0000036937115],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00012317204,0.00028445257,0.00027971825,0.00013572925,0.00032555405,0.0004767946,0.0005578567,0.0004947294,0.00156386],"category_scores_gemma":[0.00019335028,0.00018147778,0.00016243069,0.00012100727,0.0001760661,0.0005205381,0.0001784909,0.00021911695,0.00028159557],"study_design_candidate":"simulation_or_modeling","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00020596755,0.0000922723,0.001340693,0.0005672787,0.000049482394,0.00035002045,0.000087631255,0.031670127,0.9141779,0.03621265,0.001777831,0.013468147],"study_design_scores_gemma":[0.00010553399,0.00091980334,0.005262897,0.00010470802,0.00013702721,0.00061827124,0.00026538732,0.4065253,0.5527844,0.008424518,0.02476677,0.00008548278],"about_ca_topic_score_codex":0.001678436,"about_ca_topic_score_gemma":0.0062918426,"teacher_disagreement_score":0.001678436,"about_ca_system_score_codex":0.0005487606,"about_ca_system_score_gemma":0.00036177295,"threshold_uncertainty_score":0.005231619},"labels":[],"label_agreement":null},{"id":"W4393188579","doi":"10.1007/s10825-024-02152-x","title":"Design and analysis of a highly efficient 2D/3D bilayer-based perovskite solar cell","year":2024,"lang":"en","type":"article","venue":"Journal of Computational Electronics","topic":"Perovskite Materials and Applications","field":"Engineering","cited_by":20,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Saskatchewan","funders":"","keywords":"Bilayer; Solar cell; Materials science; Perovskite (structure); Perovskite solar cell; Condensed matter physics; Nanotechnology; Engineering physics; Chemical physics; Computer science; Optoelectronics; Physics; Crystallography; Chemistry","score_opus":0.006621814047820194,"score_gpt":0.21996831355891533,"score_spread":0.21334649951109513,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4393188579","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.8780876,0.00086147705,0.099600986,0.0005496042,0.0001155018,0.00018736532,0.0010875134,0.0005830572,0.018927004],"genre_scores_gemma":[0.9667528,0.00025985265,0.029325143,0.000050285264,0.000009553798,0.000111565605,0.0002125255,0.000033923396,0.0032443332],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999291,0.0000047715675,0.0000038741805,0.000011544623,0.00003667107,0.000013923627],"domain_scores_gemma":[0.99995244,0.000006610437,0.0000072318057,0.000005421411,0.000020969095,0.0000072246435],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00008294308,0.00017366167,0.0005122892,0.00013567724,0.00039205147,0.0006559836,0.000678068,0.00046484623,0.0016687863],"category_scores_gemma":[0.000119843906,0.0002520437,0.0003216772,0.00016087927,0.00014032253,0.00023372586,0.000259773,0.0002455546,0.00036813103],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00018905484,0.00013070194,0.0015564485,0.00032149715,0.00010629762,0.00033573565,0.000044319473,0.35517022,0.6212065,0.004237373,0.0010167576,0.01568507],"study_design_scores_gemma":[0.000047092806,0.00027026635,0.0010176621,0.00000789982,0.000044824727,0.000097814096,0.000036085967,0.92122394,0.07391887,0.00045617018,0.002859733,0.000019559013],"about_ca_topic_score_codex":0.0028170403,"about_ca_topic_score_gemma":0.0045253974,"teacher_disagreement_score":0.0028170403,"about_ca_system_score_codex":0.0005144508,"about_ca_system_score_gemma":0.0008978704,"threshold_uncertainty_score":0.005601287},"labels":[],"label_agreement":null},{"id":"W46714538","doi":"10.1023/a:1020721423626","title":"Calculation of Direct Tunneling Current through Ultra-Thin Gate Oxides Using Complex Band Models For SiO2","year":2002,"lang":"en","type":"article","venue":"Journal of Computational Electronics","topic":"Semiconductor materials and devices","field":"Engineering","cited_by":5,"is_retracted":false,"has_abstract":false,"route_ca_aff":false,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"","funders":"McGill University","keywords":"Quantum tunnelling; Materials science; Gate oxide; Electronic band structure; Electron; Tight binding; Molecular physics; Condensed matter physics; Electronic structure; Optoelectronics; Physics; Quantum mechanics; Transistor; Voltage","score_opus":0.0760058054992814,"score_gpt":0.2915330460575608,"score_spread":0.2155272405582794,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W46714538","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.943543,0.0006410565,0.024258528,0.00040872846,0.00009131248,0.000065401015,0.000339569,0.00028460808,0.030367792],"genre_scores_gemma":[0.992648,0.00016636822,0.0044952976,0.00004898485,0.000011289446,0.000033649943,0.00009905409,0.000042352043,0.002455062],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9999428,0.000011239135,0.0000022376844,0.000004889063,0.000024921654,0.00001394262],"domain_scores_gemma":[0.99963665,0.00021843627,0.000029760939,0.00002592428,0.000058085167,0.0000311507],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00024711833,0.00053954567,0.000563526,0.00037654833,0.0004828274,0.00064699084,0.0010060003,0.00097388047,0.0021524674],"category_scores_gemma":[0.0007894728,0.00032661352,0.0004071725,0.00044567086,0.00046313147,0.0005417931,0.0002835328,0.0004360612,0.00015371328],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00016008443,0.00008356648,0.0011429148,0.00022926158,0.000071542854,0.00036641522,0.00008154322,0.95858455,0.007929044,0.027163025,0.00087449653,0.003313689],"study_design_scores_gemma":[0.000029254878,0.000023220886,0.0003604276,0.0000070303226,0.000011151761,0.000015140627,0.000021509772,0.9966415,0.0009979914,0.0016660966,0.00022100471,0.0000056749905],"about_ca_topic_score_codex":0.01018478,"about_ca_topic_score_gemma":0.011431518,"teacher_disagreement_score":0.01018478,"about_ca_system_score_codex":0.001242547,"about_ca_system_score_gemma":0.0007748108,"threshold_uncertainty_score":0.020250976},"labels":[],"label_agreement":null}]}