{"meta":{"query_hash":"2964c0892d66","filters":{"venue":"Semiconductor Science and Technology"},"cohort_total":87,"direct_labels_cover":0,"predictions_cover":87,"exported":87,"export_cap":100000,"truncated":false,"label_status":"direct model label, unvalidated","prediction_status":"machine_predicted_unvalidated (Codex and Gemma teacher distillation)","score_status":"score_only:v0-immature-baseline","snapshot":{"source":"OpenAlex, pinned release, all 482 partitions","release":"2026-06-24","frame_built":"2026-07-12"},"permalink":"https://metacan.xera.ac/q/2964c0892d66","api":"https://metacan.xera.ac/api/v1/cohort?venue=Semiconductor+Science+and+Technology"},"results":[{"id":"W1551923605","doi":"10.1088/0268-1242/30/8/085001","title":"Hourglass-graded heterostructures as a possible route towards extremely efficient light emitting diodes","year":2015,"lang":"en","type":"article","venue":"Semiconductor Science and Technology","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McGill University","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Hourglass; Light-emitting diode; Optoelectronics; Diode; Heterojunction; Materials science; Band gap; Double heterostructure; Doping; Auger effect; Quantum efficiency; Auger; Physics; Semiconductor laser theory","score_opus":0.02099419787426054,"score_gpt":0.2673020847073283,"score_spread":0.24630788683306776,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1551923605","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.89344513,0.0030216842,0.07232813,0.0003004466,0.0001345944,0.00006174234,0.00020390085,0.0003100879,0.030194303],"genre_scores_gemma":[0.97980464,0.000750002,0.016209377,0.000032467,0.00000951173,0.0000158122,0.000042504278,0.000021176504,0.003114544],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99997985,0.0000018530436,6.506743e-7,0.0000033601195,0.000007898998,0.000006417187],"domain_scores_gemma":[0.9999784,0.0000035337976,0.0000053923764,0.0000043464297,0.0000042908046,0.000004034161],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00004235601,0.00013487555,0.00010197649,0.00010742965,0.0001479915,0.00038511158,0.00029871165,0.00019378198,0.0011061444],"category_scores_gemma":[0.000055121225,0.00010384412,0.00013132776,0.00007102604,0.00017643296,0.00026791033,0.0001713224,0.00018466849,0.00021419693],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00003526398,0.00005289839,0.0005216773,0.00014956643,0.000032976113,0.00031544702,0.00008773459,0.011161518,0.8778332,0.09782071,0.00057052186,0.011418586],"study_design_scores_gemma":[0.0000613212,0.00040122875,0.0037840346,0.00006593685,0.000056413737,0.0006236542,0.0002068044,0.08730919,0.80544597,0.057000417,0.044983417,0.000061524705],"about_ca_topic_score_codex":0.0005056161,"about_ca_topic_score_gemma":0.0014295126,"teacher_disagreement_score":0.0011061444,"about_ca_system_score_codex":0.00023956895,"about_ca_system_score_gemma":0.00012867025,"threshold_uncertainty_score":0.0037004352},"labels":[],"label_agreement":null},{"id":"W1963658859","doi":"10.1088/0268-1242/16/4/316","title":"Methods for determining deep defect concentration from dependence of excess carrier density and lifetime on illumination intensity","year":2001,"lang":"en","type":"article","venue":"Semiconductor Science and Technology","topic":"Silicon and Solar Cell Technologies","field":"Engineering","cited_by":6,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"","funders":"Institute of Gender and Health; Deutscher Akademischer Austauschdienst","keywords":"Recombination; Carrier lifetime; Auger effect; Deep-level transient spectroscopy; Electron; Intensity (physics); Saturation (graph theory); Chemistry; Silicon; Doping; Vacancy defect; Atomic physics; Materials science; Molecular physics; Optoelectronics; Auger; Optics; Physics","score_opus":0.01839530023268204,"score_gpt":0.2875941961088045,"score_spread":0.26919889587612245,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1963658859","genre_codex":"methods","genre_gemma":"methods","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"methods","genre_consensus":"methods","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.026111757,0.001846997,0.96807164,0.000108045104,0.00006260594,0.00029346015,0.0003479508,0.0016288789,0.0015285778],"genre_scores_gemma":[0.18499179,0.0019387803,0.8081282,0.000118613585,0.00005216811,0.0013578355,0.000443415,0.0002726704,0.002696612],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9983151,0.00023964208,0.000111086425,0.00039591035,0.0008352262,0.000103190236],"domain_scores_gemma":[0.99576354,0.0023329514,0.0006533169,0.00044081887,0.0007216052,0.00008774835],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0017729542,0.0012715989,0.001055754,0.0034963856,0.0003913478,0.0010330963,0.0018450376,0.0013605899,0.0012718054],"category_scores_gemma":[0.005008359,0.0010522192,0.00063510105,0.001399835,0.0008993924,0.0014153112,0.0010017481,0.001822031,0.00075543654],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0006242709,0.00026638238,0.010987813,0.0013022369,0.0001682488,0.00018235823,0.0004596836,0.0106584,0.6288805,0.010110581,0.00092616485,0.33543336],"study_design_scores_gemma":[0.00013953897,0.00071879005,0.014152467,0.00011557467,0.00017906567,0.0013119184,0.00010210271,0.12708315,0.83632225,0.009278269,0.01014481,0.0004520433],"about_ca_topic_score_codex":0.0009394542,"about_ca_topic_score_gemma":0.0014281892,"teacher_disagreement_score":0.0034963856,"about_ca_system_score_codex":0.0008523888,"about_ca_system_score_gemma":0.0006280437,"threshold_uncertainty_score":0.009376407},"labels":[],"label_agreement":null},{"id":"W1965216013","doi":"10.1088/0268-1242/15/3/304","title":"Interaction of p-type dopants during diffusion in InP","year":2000,"lang":"en","type":"article","venue":"Semiconductor Science and Technology","topic":"Semiconductor materials and interfaces","field":"Physics and Astronomy","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Nortel (Canada)","funders":"","keywords":"Dopant; Diffusion; Type (biology); Materials science; Chemistry; Mineralogy; Doping; Geology; Thermodynamics; Optoelectronics; Physics","score_opus":0.010559960537222983,"score_gpt":0.25762023638989445,"score_spread":0.24706027585267146,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1965216013","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99345064,0.00080072565,0.0033951404,0.00012268692,0.000025011082,0.000037849655,0.00018109383,0.00008443003,0.0019024798],"genre_scores_gemma":[0.9960686,0.0006290416,0.0021277757,0.000025627962,0.000005869357,0.00002439081,0.000082170045,0.000024114237,0.0010124019],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99984515,0.000020186668,0.0000055346345,0.000041400563,0.000050348102,0.00003749776],"domain_scores_gemma":[0.99960715,0.0002232835,0.00008148002,0.000021986381,0.000040651234,0.000025430063],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00019995453,0.0004896566,0.0006505703,0.00021809978,0.0008944077,0.00060918386,0.000602798,0.00048293668,0.00085851725],"category_scores_gemma":[0.0006088907,0.00033341194,0.00020800345,0.00036909338,0.0004997732,0.00072733266,0.00037823312,0.0005161392,0.00017337642],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0003751179,0.00006032742,0.0012949042,0.0002773167,0.000020241523,0.00071123557,0.0003172794,0.0015228017,0.9908178,0.00068803533,0.0001671194,0.0037478749],"study_design_scores_gemma":[0.0000652862,0.0003279018,0.0027715364,0.000016954062,0.00004015042,0.00051346037,0.00019741536,0.01062096,0.98245126,0.00056304276,0.0024013834,0.00003067037],"about_ca_topic_score_codex":0.0020908217,"about_ca_topic_score_gemma":0.0026543404,"teacher_disagreement_score":0.0020908217,"about_ca_system_score_codex":0.0009154245,"about_ca_system_score_gemma":0.00022269455,"threshold_uncertainty_score":0.006641865},"labels":[],"label_agreement":null},{"id":"W1981062522","doi":"10.1088/0268-1242/21/3/012","title":"Improved characteristics of a terahertz set-up built with an emitter and a detector made on proton-bombarded GaAs photoconductive materials","year":2006,"lang":"en","type":"article","venue":"Semiconductor Science and Technology","topic":"Terahertz technology and applications","field":"Engineering","cited_by":28,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Université de Sherbrooke","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Terahertz radiation; Common emitter; Photoconductivity; Optoelectronics; Detector; Biasing; Materials science; Proton; Radiation; Bandwidth (computing); Antenna (radio); Optics; Voltage; Physics; Electrical engineering; Telecommunications","score_opus":0.008170036412306719,"score_gpt":0.22764336860645115,"score_spread":0.21947333219414444,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1981062522","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9259682,0.00174254,0.05494576,0.001279135,0.00043890206,0.00027475142,0.0023119338,0.0056029325,0.0074358224],"genre_scores_gemma":[0.9639953,0.00032337202,0.023404194,0.00056821364,0.00016995812,0.0001813963,0.0007741949,0.00040424973,0.010179191],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9984157,0.00022065804,0.0000643061,0.00045900972,0.0006570134,0.00018329115],"domain_scores_gemma":[0.99593085,0.0021631513,0.00029082262,0.00056465133,0.000767715,0.00028282925],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0011256792,0.0009463861,0.0017921057,0.0009296935,0.0010845048,0.0012818486,0.004620937,0.0032633364,0.0080311475],"category_scores_gemma":[0.0019217125,0.000855676,0.0009976816,0.0009715807,0.00082124147,0.0017075359,0.000987304,0.0015830443,0.0026112366],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0022116713,0.00015116234,0.0033097079,0.00017906124,0.000090879534,0.0004314253,0.00041732725,0.0005440114,0.98368394,0.0012767352,0.0010597835,0.0066441605],"study_design_scores_gemma":[0.00013843723,0.00062959717,0.0063614054,0.000042775813,0.0001583766,0.0008692183,0.00008271575,0.0057685203,0.9808624,0.00027702725,0.0047413353,0.000068231355],"about_ca_topic_score_codex":0.0013683477,"about_ca_topic_score_gemma":0.0018035414,"teacher_disagreement_score":0.0080311475,"about_ca_system_score_codex":0.0012233165,"about_ca_system_score_gemma":0.0007219473,"threshold_uncertainty_score":0.026866913},"labels":[],"label_agreement":null},{"id":"W1999404028","doi":"10.1088/0268-1242/24/3/035011","title":"In-place bonding of GaAs/InGaAs/GaAs heterostructures to GaAs (0 0 1)","year":2009,"lang":"en","type":"article","venue":"Semiconductor Science and Technology","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":11,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Simon Fraser University","funders":"British Columbia Knowledge Development Fund; Natural Sciences and Engineering Research Council of Canada","keywords":"Heterojunction; Optoelectronics; Gallium arsenide; Materials science; Chemistry","score_opus":0.006685112849239768,"score_gpt":0.2350222711386734,"score_spread":0.22833715828943366,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1999404028","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9961565,0.00014168271,0.0017754183,0.000019009836,0.00001831189,0.0000135528735,0.00009566739,0.000037087288,0.001742792],"genre_scores_gemma":[0.9922603,0.00018279091,0.0044083204,0.000013280471,0.0000046994737,0.000016828275,0.00009071513,0.00001933182,0.0030037719],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99993336,0.0000056812487,0.0000030999518,0.000015089535,0.000027959979,0.000014789918],"domain_scores_gemma":[0.9999434,0.0000058051223,0.000015994041,0.000011714934,0.0000116198435,0.000011539648],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000063096326,0.00025645472,0.00020994754,0.000112580216,0.00028842516,0.00021479864,0.00049549487,0.00017464772,0.0016619444],"category_scores_gemma":[0.000101809375,0.0003058034,0.000116827294,0.00013349445,0.00010380531,0.00014498025,0.00026898042,0.00023297963,0.00030667902],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000021828631,0.0000123044165,0.00021668417,0.000025292018,0.0000056744593,0.000050972823,0.000021248918,0.00018891151,0.99834704,0.0001368685,0.00004371857,0.00092944095],"study_design_scores_gemma":[0.000005366844,0.00007250037,0.0022536777,0.0000020166665,0.000009323496,0.00006447788,0.000031373165,0.001473261,0.99521327,0.000052871044,0.0008182708,0.0000035108324],"about_ca_topic_score_codex":0.0010893553,"about_ca_topic_score_gemma":0.0030687293,"teacher_disagreement_score":0.0016619444,"about_ca_system_score_codex":0.00024470084,"about_ca_system_score_gemma":0.00017005212,"threshold_uncertainty_score":0.005559802},"labels":[],"label_agreement":null},{"id":"W2002281285","doi":"10.1088/0268-1242/28/10/105025","title":"Opportunities and pitfalls in patterned self-catalyzed GaAs nanowire growth on silicon","year":2013,"lang":"en","type":"article","venue":"Semiconductor Science and Technology","topic":"Nanowire Synthesis and Applications","field":"Engineering","cited_by":38,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McMaster University","funders":"","keywords":"Silicon nanowires; Nanowire; Silicon; Nanotechnology; Materials science; Catalysis; Optoelectronics; Chemistry","score_opus":0.012274848719754792,"score_gpt":0.20375684577519387,"score_spread":0.19148199705543908,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2002281285","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.98264164,0.0015898083,0.012688204,0.00023428682,0.000032574517,0.000010788248,0.000026063366,0.0000932647,0.0026834887],"genre_scores_gemma":[0.98241895,0.0012821077,0.015281375,0.00003286676,0.0000198947,0.000010763198,0.00003458336,0.000029040686,0.0008903959],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998499,0.00003026346,0.000013035045,0.00003334509,0.000050498275,0.000022896993],"domain_scores_gemma":[0.99971634,0.00013599847,0.00004049918,0.00006749816,0.000023801338,0.000015845315],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0002895493,0.00012333141,0.00012196669,0.00010606343,0.00016817196,0.00053026155,0.00024046053,0.00022704357,0.00039482734],"category_scores_gemma":[0.00044486523,0.00024948336,0.00009942901,0.000114913106,0.00032880047,0.00041847225,0.0002899764,0.0003165244,0.00016195606],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000085891734,0.000030331315,0.0016149048,0.000107721586,0.000011496571,0.00041313085,0.00012859308,0.001986635,0.9683713,0.001601893,0.0001081238,0.02554002],"study_design_scores_gemma":[0.000012570656,0.000295881,0.0023433296,0.000014859277,0.000018514445,0.00073037256,0.00012960819,0.019179108,0.9717452,0.0018679652,0.0036498974,0.000012618954],"about_ca_topic_score_codex":0.00011302175,"about_ca_topic_score_gemma":0.00049446465,"teacher_disagreement_score":0.00053026155,"about_ca_system_score_codex":0.00012359311,"about_ca_system_score_gemma":0.00013476204,"threshold_uncertainty_score":0.0015313029},"labels":[],"label_agreement":null},{"id":"W2002779682","doi":"10.1088/0268-1242/27/10/105025","title":"Electrical transport in InAs/GaSb superlattice: role of surface states and interface roughness","year":2012,"lang":"en","type":"article","venue":"Semiconductor Science and Technology","topic":"Advanced Semiconductor Detectors and Materials","field":"Engineering","cited_by":4,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Toronto","funders":"","keywords":"Superlattice; Pseudopotential; Condensed matter physics; Scattering; Surface finish; Materials science; Electron; Thermal conduction; Electron mobility; Chemistry; Optics; Physics","score_opus":0.006643818482825217,"score_gpt":0.23349340551550674,"score_spread":0.22684958703268152,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2002779682","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99485445,0.00009130515,0.003864227,0.000054563654,0.000004211889,0.0000054579446,0.000037019883,0.00003224565,0.0010564133],"genre_scores_gemma":[0.9983676,0.000056028603,0.0011892007,0.000006666534,0.000001973046,0.0000074256177,0.000031414336,0.000011993297,0.00032768064],"study_design_codex":"simulation_or_modeling","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99994636,0.000012362762,0.0000019133208,0.000006882974,0.000017059912,0.000015492631],"domain_scores_gemma":[0.99985385,0.00005121589,0.00003428126,0.000015075865,0.000030151974,0.000015301772],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00020111997,0.00034341865,0.00028600043,0.0002553222,0.0003239809,0.00044105403,0.0004711351,0.00031185496,0.000725267],"category_scores_gemma":[0.00041761145,0.00022151016,0.0002345096,0.00026650456,0.00041842237,0.00062589586,0.0001769907,0.00021536094,0.00014622297],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00026169315,0.00010595697,0.0064503383,0.0001230538,0.00003795328,0.00046014332,0.00015889788,0.66390413,0.31597295,0.009279147,0.00020297412,0.003042715],"study_design_scores_gemma":[0.000020270321,0.00007492167,0.0011707456,0.0000057125253,0.000008584117,0.00003461478,0.000039038583,0.9819338,0.015358298,0.0011825283,0.00016109493,0.000010490992],"about_ca_topic_score_codex":0.0061989506,"about_ca_topic_score_gemma":0.004873706,"teacher_disagreement_score":0.0061989506,"about_ca_system_score_codex":0.00084782345,"about_ca_system_score_gemma":0.00037524608,"threshold_uncertainty_score":0.012325704},"labels":[],"label_agreement":null},{"id":"W2005319146","doi":"10.1088/0268-1242/19/11/014","title":"Thermopower and weak localization","year":2004,"lang":"en","type":"article","venue":"Semiconductor Science and Technology","topic":"Quantum and electron transport phenomena","field":"Physics and Astronomy","cited_by":6,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Institute for Microstructural Sciences; Queen's University","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Seebeck coefficient; Condensed matter physics; Physics; Thermoelectric effect; Thermodynamics","score_opus":0.00535788478185405,"score_gpt":0.21863417880131455,"score_spread":0.2132762940194605,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2005319146","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99141216,0.0003496596,0.0046460764,0.00014774714,0.000020979254,0.0000056843974,0.000029998537,0.00007604037,0.0033115053],"genre_scores_gemma":[0.9991911,0.000065543914,0.00023431271,0.000019686795,0.000009212421,0.0000034994625,0.000011270707,0.0000102828835,0.0004551813],"study_design_codex":"bench_or_experimental","study_design_gemma":"theoretical_or_conceptual","domain_scores_codex":[0.9998467,0.00001811164,0.0000052001096,0.000038747505,0.00005080732,0.000040427203],"domain_scores_gemma":[0.999383,0.00032834194,0.00009609412,0.00007549617,0.00005741014,0.000059573973],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00020301637,0.00024688378,0.00019728809,0.0002335686,0.0002594532,0.0003669102,0.0002913159,0.00023434374,0.002450846],"category_scores_gemma":[0.0008194799,0.00016567111,0.000116639836,0.00014287612,0.0009348682,0.00060488435,0.00057649467,0.000458022,0.00036906396],"study_design_candidate":"theoretical_or_conceptual","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00021552987,0.00003821677,0.0023451885,0.00007096617,0.000012820648,0.00026879256,0.00014614835,0.0021141842,0.98547006,0.0050892737,0.000086900916,0.0041418355],"study_design_scores_gemma":[0.000053498145,0.0006373997,0.0109379515,0.000025202142,0.000046675086,0.0007557406,0.000105750805,0.030064272,0.9466831,0.008876753,0.0017766115,0.000037055208],"about_ca_topic_score_codex":0.0001333151,"about_ca_topic_score_gemma":0.00014206061,"teacher_disagreement_score":0.002450846,"about_ca_system_score_codex":0.00018616345,"about_ca_system_score_gemma":0.000107022395,"threshold_uncertainty_score":0.008198917},"labels":[],"label_agreement":null},{"id":"W2012966624","doi":"10.1088/0268-1242/17/9/101","title":"High absorption GaAs/AlGaAs quantum well infrared photodetectors","year":2002,"lang":"en","type":"article","venue":"Semiconductor Science and Technology","topic":"Semiconductor Quantum Structures and Devices","field":"Physics and Astronomy","cited_by":7,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Institute for Microstructural Sciences","funders":"","keywords":"Quantum well infrared photodetector; Photodetector; Optoelectronics; Infrared; Absorption (acoustics); Wafer; Quantum well; Materials science; Wavelength; Doping; Optics; Physics","score_opus":0.0110250575628593,"score_gpt":0.22327161724728986,"score_spread":0.21224655968443057,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2012966624","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.6675537,0.013315584,0.047385488,0.0029114708,0.0015967884,0.000342896,0.0026247995,0.0042225486,0.26004666],"genre_scores_gemma":[0.89116704,0.0020064216,0.01885617,0.00042535775,0.00022166011,0.000055095537,0.00066551863,0.00016610538,0.08643658],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9996952,0.000032964617,0.000009422767,0.000052453128,0.00015161757,0.000058467722],"domain_scores_gemma":[0.99972314,0.00007690154,0.000017822456,0.00004317802,0.00010118151,0.000037752958],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0004999361,0.00024301937,0.00029952408,0.00053194526,0.00048452357,0.00079040317,0.000571034,0.0006348269,0.013598112],"category_scores_gemma":[0.0003662399,0.0001867717,0.00018937133,0.00058795616,0.00019966553,0.0010638564,0.00034953724,0.00041904085,0.0037621756],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0016351818,0.00024474744,0.0032590928,0.00046594188,0.000066084234,0.00027115006,0.00013154419,0.0004706167,0.8992001,0.013767143,0.021953136,0.058535244],"study_design_scores_gemma":[0.000114169336,0.000328449,0.011313464,0.00006651815,0.0001066981,0.00037952935,0.000092242604,0.0065761167,0.91093487,0.0022452436,0.067804165,0.000038483366],"about_ca_topic_score_codex":0.0005569126,"about_ca_topic_score_gemma":0.0020840862,"teacher_disagreement_score":0.013598112,"about_ca_system_score_codex":0.0005351158,"about_ca_system_score_gemma":0.0002285631,"threshold_uncertainty_score":0.045490205},"labels":[],"label_agreement":null},{"id":"W2020100841","doi":"10.1088/0268-1242/21/3/021","title":"Two-beam cross-modulation photocarrier radiometry: principles and contrast amplification in semiconductor subsurface imaging","year":2006,"lang":"en","type":"article","venue":"Semiconductor Science and Technology","topic":"Thermography and Photoacoustic Techniques","field":"Engineering","cited_by":15,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Toronto","funders":"","keywords":"Radiometry; Optics; Semiconductor; Modulation (music); Contrast (vision); Beam (structure); Chemistry; Materials science; Physics; Optoelectronics","score_opus":0.007954303179103247,"score_gpt":0.23903347548151535,"score_spread":0.2310791723024121,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2020100841","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.06506902,0.005192464,0.92657286,0.00028590843,0.000044569682,0.00011261616,0.000034786593,0.00039727177,0.0022904198],"genre_scores_gemma":[0.3337346,0.0028616518,0.66100246,0.00013570326,0.0000545657,0.00019038872,0.00004606546,0.00006818911,0.0019063854],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99973315,0.00007138558,0.000008436546,0.0000508301,0.000103711085,0.0000325089],"domain_scores_gemma":[0.9995801,0.00022238363,0.000070397,0.00005823107,0.000048937047,0.00001991225],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0006889763,0.000578739,0.0003121542,0.00074947753,0.00015593268,0.00078057236,0.0012568982,0.00074435736,0.0005692293],"category_scores_gemma":[0.0006607906,0.00045652536,0.00027923088,0.0004562237,0.00119296,0.0010137415,0.00071204995,0.0010995012,0.00027734763],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00007396943,0.00004945014,0.0006437614,0.00032613662,0.000016295202,0.00018990356,0.00013877472,0.0029092594,0.8944331,0.03159446,0.00018040527,0.06944445],"study_design_scores_gemma":[0.000019320807,0.00027144377,0.0010366049,0.000042358013,0.000016143016,0.0014017881,0.000045660334,0.056979187,0.92644864,0.0075467206,0.0061382987,0.00005385189],"about_ca_topic_score_codex":0.00022591143,"about_ca_topic_score_gemma":0.00025005726,"teacher_disagreement_score":0.0012568982,"about_ca_system_score_codex":0.0006126691,"about_ca_system_score_gemma":0.00034064022,"threshold_uncertainty_score":0.0044453144},"labels":[],"label_agreement":null},{"id":"W2022307104","doi":"10.1088/0268-1242/25/4/045023","title":"Effect of annealing on the structural and optical properties of heavily carbon-doped ZnO","year":2010,"lang":"en","type":"article","venue":"Semiconductor Science and Technology","topic":"ZnO doping and properties","field":"Materials Science","cited_by":5,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Simon Fraser University","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Annealing (glass); Doping; Materials science; Carbon fibers; Chemistry; Optoelectronics; Metallurgy; Composite material","score_opus":0.013582850852543685,"score_gpt":0.24340517236721398,"score_spread":0.2298223215146703,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2022307104","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9984297,0.00052111974,0.00031374834,0.00002577283,0.000018315977,0.000005945539,0.0001337867,0.000022726468,0.0005287845],"genre_scores_gemma":[0.9987907,0.00023495374,0.00038493695,0.000012551982,0.0000048894317,0.0000046623836,0.00015420417,0.000018301276,0.00039478467],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99985874,0.000014426736,0.000015868349,0.000035623732,0.000036195866,0.000039097526],"domain_scores_gemma":[0.9996636,0.00014045472,0.00007860535,0.00002874827,0.00005369942,0.000034856344],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00014906884,0.0003693575,0.00027644399,0.0001524751,0.00016531038,0.000361654,0.00021182679,0.00027862936,0.0010067674],"category_scores_gemma":[0.0005404887,0.00034074186,0.00018819985,0.0001904193,0.00017339081,0.00021991103,0.000092767346,0.00028643102,0.00016921137],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00034683125,0.000024270239,0.00067028357,0.000052439118,0.00001563076,0.000061857194,0.00003778947,0.00021504056,0.9975666,0.000025456471,0.000026626478,0.0009572492],"study_design_scores_gemma":[0.000015931158,0.00023181194,0.010676246,0.0000058791074,0.000033755547,0.000046536563,0.00002043977,0.0009218612,0.9877221,0.000011456708,0.00030625626,0.000007674246],"about_ca_topic_score_codex":0.0022991956,"about_ca_topic_score_gemma":0.0033859597,"teacher_disagreement_score":0.0022991956,"about_ca_system_score_codex":0.0002880487,"about_ca_system_score_gemma":0.00013445219,"threshold_uncertainty_score":0.0045716166},"labels":[],"label_agreement":null},{"id":"W2029576912","doi":"10.1088/0268-1242/19/3/018","title":"Mechanisms of photocurrent generation in SiGe/Si HIP infrared photodetectors","year":2003,"lang":"en","type":"article","venue":"Semiconductor Science and Technology","topic":"Semiconductor materials and interfaces","field":"Physics and Astronomy","cited_by":4,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Institute for Microstructural Sciences","funders":"","keywords":"Photocurrent; Photodetector; Heterojunction; Optoelectronics; Infrared; Materials science; Wavelength; Dark current; Photoconductivity; Optics; Physics","score_opus":0.017979054818925616,"score_gpt":0.25112298180294285,"score_spread":0.23314392698401723,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2029576912","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.96055365,0.002043554,0.027558947,0.00026253448,0.000044130687,0.000059678874,0.00013362215,0.00045542038,0.008888515],"genre_scores_gemma":[0.9954135,0.0005006527,0.0020990334,0.000023503933,0.0000073015526,0.000022704751,0.000035276516,0.000014652915,0.0018834132],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.999863,0.000016524515,0.000007206478,0.000018700992,0.00005085386,0.000043663862],"domain_scores_gemma":[0.99979705,0.00010730613,0.00002929281,0.00002269725,0.000025420974,0.00001822532],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0003091549,0.00042904585,0.0004187017,0.00055782957,0.0004086808,0.0008060487,0.00085461064,0.0006091804,0.0019077013],"category_scores_gemma":[0.0003711683,0.00030284404,0.00036164108,0.0002637121,0.00090622634,0.000724408,0.0004005013,0.00057576486,0.00032216276],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00046660015,0.00027397586,0.0043360363,0.00058379275,0.000087555345,0.0012887998,0.0005473723,0.029980872,0.8633525,0.072629854,0.00082885934,0.025623808],"study_design_scores_gemma":[0.0001296424,0.00032614922,0.005439606,0.0000478967,0.000061457664,0.0010752834,0.00028818686,0.16545746,0.8070313,0.018031534,0.002051409,0.000060102404],"about_ca_topic_score_codex":0.00047398126,"about_ca_topic_score_gemma":0.00036881847,"teacher_disagreement_score":0.0019077013,"about_ca_system_score_codex":0.00052903936,"about_ca_system_score_gemma":0.00022105084,"threshold_uncertainty_score":0.006381929},"labels":[],"label_agreement":null},{"id":"W2031958080","doi":"10.1088/0268-1242/15/12/101","title":"Enhanced bandgap blue-shift in InGaAsP multiple-quantum-well laser structures by low-temperature-grown InP","year":2000,"lang":"en","type":"article","venue":"Semiconductor Science and Technology","topic":"Semiconductor Quantum Structures and Devices","field":"Physics and Astronomy","cited_by":11,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McMaster University","funders":"","keywords":"Blueshift; Photoluminescence; Optoelectronics; Annealing (glass); Epitaxy; Quantum well; Molecular beam epitaxy; Band gap; Materials science; Laser; Dielectric; Indium gallium arsenide; Indium phosphide; Gallium arsenide; Chemistry; Optics; Layer (electronics); Nanotechnology","score_opus":0.005498030471515397,"score_gpt":0.2309934957227352,"score_spread":0.2254954652512198,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2031958080","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99826694,0.000093034316,0.0010978552,0.000023555938,0.00000723222,0.000004008561,0.000024119105,0.000047219535,0.00043604785],"genre_scores_gemma":[0.9975775,0.00011562887,0.0015747941,0.000010498536,0.0000043009136,0.000009576882,0.00002758546,0.000014879337,0.0006653646],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999294,0.0000064725155,0.0000029830371,0.000021871549,0.000025055035,0.000014236351],"domain_scores_gemma":[0.99989986,0.000020340518,0.00003930366,0.000011083338,0.000015181176,0.000014242082],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00007056878,0.00027212166,0.00022925148,0.00010561996,0.00020305607,0.00023076423,0.00035226176,0.00027051038,0.0007968981],"category_scores_gemma":[0.000167805,0.0002739394,0.0001266038,0.00010301889,0.0002689894,0.00027462927,0.0002098887,0.00025674855,0.00021174682],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000017161645,0.000005128392,0.00005919878,0.0000079293095,0.0000010410944,0.000018521509,0.00001169942,0.000044748147,0.999551,0.000036176203,0.000007445502,0.00023990305],"study_design_scores_gemma":[0.000008562407,0.000071613984,0.0014221084,0.0000016698663,0.000004454773,0.000056862096,0.000010013696,0.0016883832,0.99647176,0.000030412179,0.00023117408,0.0000029378032],"about_ca_topic_score_codex":0.00094962865,"about_ca_topic_score_gemma":0.0016781202,"teacher_disagreement_score":0.00094962865,"about_ca_system_score_codex":0.00034144017,"about_ca_system_score_gemma":0.00017557507,"threshold_uncertainty_score":0.0026658177},"labels":[],"label_agreement":null},{"id":"W2033797074","doi":"10.1088/0268-1242/28/4/045014","title":"Effect of group-III donors on high-resolution photoluminescence and morphology of ZnO nanowires grown by metalorganic vapour phase epitaxy","year":2013,"lang":"en","type":"article","venue":"Semiconductor Science and Technology","topic":"ZnO doping and properties","field":"Materials Science","cited_by":8,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Metalorganic vapour phase epitaxy; Dopant; Photoluminescence; Nanowire; Epitaxy; Indium; Exciton; Materials science; Doping; Sapphire; Luminescence; Trimethylindium; Substrate (aquarium); Optoelectronics; Analytical Chemistry (journal); Chemistry; Nanotechnology; Optics; Condensed matter physics; Laser","score_opus":0.0065657833824486695,"score_gpt":0.2301433182933894,"score_spread":0.22357753491094073,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2033797074","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9973718,0.0005124209,0.0010342845,0.00004353709,0.000014435167,0.0000089448795,0.00013941745,0.00003347135,0.0008416764],"genre_scores_gemma":[0.9978307,0.00028498698,0.00085863826,0.000022091175,0.000004135005,0.000008521578,0.00012854842,0.000040866224,0.0008214735],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.999877,0.000015476036,0.0000097578495,0.000038424034,0.000031673768,0.000027675269],"domain_scores_gemma":[0.99962175,0.00015887673,0.000079686746,0.00003439386,0.000035120614,0.0000700458],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00013352475,0.00034078737,0.00025326357,0.00008275899,0.00011882139,0.0005718248,0.00031043493,0.00024792756,0.0009853049],"category_scores_gemma":[0.00059222797,0.0003074038,0.000102666236,0.00008575146,0.00017110186,0.00024635426,0.0001808247,0.00023743755,0.0002458566],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00015538643,0.000017952632,0.00031623192,0.000025102814,0.000005504904,0.000053563548,0.00001847826,0.00013140272,0.99846077,0.000027928016,0.000015846907,0.0007719991],"study_design_scores_gemma":[0.000019763609,0.00008217367,0.002310414,0.0000037858472,0.000011709742,0.000054829277,0.000014965708,0.00074260816,0.99640805,0.0000118437165,0.00033665024,0.0000031738546],"about_ca_topic_score_codex":0.0015585507,"about_ca_topic_score_gemma":0.0022118178,"teacher_disagreement_score":0.0015585507,"about_ca_system_score_codex":0.0003892215,"about_ca_system_score_gemma":0.00019837401,"threshold_uncertainty_score":0.0032961369},"labels":[],"label_agreement":null},{"id":"W2035019707","doi":"10.1088/0268-1242/19/3/026","title":"High responsivity, dual-band response and intraband avalanche multiplication in InGaAs/InP quantum well photodetectors","year":2004,"lang":"en","type":"article","venue":"Semiconductor Science and Technology","topic":"Semiconductor Quantum Structures and Devices","field":"Physics and Astronomy","cited_by":15,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Institute for Microstructural Sciences","funders":"Ministry of Defense; Alexander von Humboldt-Stiftung","keywords":"Responsivity; Photodetector; Optoelectronics; Infrared; Quantum well infrared photodetector; Quantum well; Avalanche photodiode; Materials science; Electron; Physics; Impact ionization; Ionization; Optics; Detector; Laser; Quantum mechanics","score_opus":0.007465643739866434,"score_gpt":0.24561787893236173,"score_spread":0.2381522351924953,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2035019707","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.98488253,0.00055386295,0.012991512,0.00005299985,0.000009281484,0.000023614664,0.00007581561,0.00014125518,0.0012691756],"genre_scores_gemma":[0.9932278,0.00020419626,0.005610869,0.0000148789395,0.0000058354626,0.0000149072885,0.0000381153,0.000017662169,0.0008658497],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99930537,0.0001109057,0.00002442358,0.00014216026,0.0003190907,0.00009799404],"domain_scores_gemma":[0.9995845,0.00015777598,0.00006686807,0.00004344819,0.00009483217,0.000052630003],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00049175444,0.0006271366,0.00050153845,0.000482524,0.00031828342,0.0005872009,0.0007750778,0.00058258895,0.0006228859],"category_scores_gemma":[0.0006760822,0.00046303062,0.00019374743,0.00047849724,0.0005744671,0.00044780778,0.0004734669,0.00038326601,0.0002520913],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00011332665,0.000029104856,0.0009450636,0.000046952817,0.000012493239,0.0001576058,0.00006689461,0.0006154419,0.99579597,0.00032121054,0.00003346066,0.001862472],"study_design_scores_gemma":[0.000018889052,0.00021625662,0.004039929,0.000006574445,0.000021758648,0.00026833967,0.000029538642,0.007675351,0.9870293,0.00028249572,0.0003957454,0.000015753069],"about_ca_topic_score_codex":0.0006898883,"about_ca_topic_score_gemma":0.0011696802,"teacher_disagreement_score":0.0007750778,"about_ca_system_score_codex":0.00041459838,"about_ca_system_score_gemma":0.00015283318,"threshold_uncertainty_score":0.0030081272},"labels":[],"label_agreement":null},{"id":"W2043591271","doi":"10.1088/0268-1242/20/11/001","title":"Electron spin–orbit splitting in a InGaAs/InP quantum well studied by means of the weak-antilocalization and spin-zero effects in tilted magnetic fields","year":2005,"lang":"en","type":"article","venue":"Semiconductor Science and Technology","topic":"Quantum and electron transport phenomena","field":"Physics and Astronomy","cited_by":29,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Institute for Microstructural Sciences","funders":"","keywords":"Zeeman effect; Condensed matter physics; Spin (aerodynamics); Physics; Magnetic field; Spin–orbit interaction; Electron; Zero field splitting; Rashba effect; Zeeman energy; Coupling (piping); Energy level splitting; Chemistry; Spin polarization; Materials science; Quantum mechanics; Spintronics","score_opus":0.00408204361813898,"score_gpt":0.22715949858463486,"score_spread":0.22307745496649586,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2043591271","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9945991,0.00023787077,0.0022468036,0.00026174044,0.000027501395,0.000008923059,0.00004004739,0.000064443855,0.0025135244],"genre_scores_gemma":[0.99843806,0.000080460355,0.00089219655,0.000028205157,0.000013370943,0.000005715462,0.000020140042,0.00000840117,0.0005134347],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999062,0.000022102908,0.0000035205248,0.000013264319,0.000028043496,0.000026913285],"domain_scores_gemma":[0.99970645,0.00012968646,0.00003945242,0.000026855867,0.000038343438,0.000059143935],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00034672086,0.00027674067,0.0008087526,0.00051767495,0.0008879031,0.0004635226,0.00075762026,0.00052161986,0.0012876366],"category_scores_gemma":[0.0005332139,0.0002682789,0.00024295218,0.0005401042,0.0010560508,0.00063217425,0.00035433078,0.0005958414,0.000109955814],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.002654817,0.0005607171,0.0059966794,0.00039363245,0.00018213039,0.0030083847,0.000735093,0.03088395,0.85766494,0.0902557,0.0016626456,0.0060013114],"study_design_scores_gemma":[0.00041286994,0.0007808567,0.02117877,0.000054180004,0.00018058435,0.0008548593,0.0004915293,0.7110929,0.22334841,0.040015418,0.0014282202,0.00016148803],"about_ca_topic_score_codex":0.002053042,"about_ca_topic_score_gemma":0.0022016638,"teacher_disagreement_score":0.002053042,"about_ca_system_score_codex":0.00052751007,"about_ca_system_score_gemma":0.00032051792,"threshold_uncertainty_score":0.004307568},"labels":[],"label_agreement":null},{"id":"W2045575725","doi":"10.1088/0268-1242/19/4/123","title":"Tunnel current control of relaxation of a nuclear spin placed on a nanomechanical oscillator","year":2004,"lang":"en","type":"article","venue":"Semiconductor Science and Technology","topic":"Quantum and electron transport phenomena","field":"Physics and Astronomy","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"D-Wave Systems (Canada)","funders":"Deutscher Akademischer Austauschdienst; U.S. Department of Defense","keywords":"Current (fluid); Relaxation (psychology); Spin (aerodynamics); Condensed matter physics; Nuclear magnetic resonance; Physics; Materials science; Neuroscience; Psychology; Thermodynamics","score_opus":0.007804369867654735,"score_gpt":0.23499590425132097,"score_spread":0.22719153438366624,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2045575725","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.96584785,0.00039373842,0.030500425,0.00019945284,0.0000954881,0.000021824171,0.000016398744,0.00012999417,0.002794734],"genre_scores_gemma":[0.9927891,0.00012676355,0.006140176,0.000025406729,0.000018064378,0.0000104818555,0.0000072998173,0.0000122252095,0.00087050925],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99992216,0.000011328908,0.0000036697038,0.00002025207,0.000025480225,0.000017111706],"domain_scores_gemma":[0.99973243,0.00010376315,0.000047108762,0.000027567068,0.000043087144,0.000046038735],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00020698813,0.00014050852,0.00017714027,0.0001396763,0.0002361482,0.00029202612,0.0006015724,0.00021895299,0.00132503],"category_scores_gemma":[0.00043842592,0.000094246854,0.00010194597,0.000080352074,0.000384747,0.00042728364,0.00025736468,0.0003464481,0.00014305797],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0001450399,0.000053925847,0.00015184243,0.000047255406,0.0000052167998,0.00008243485,0.000075163596,0.0012454375,0.9850311,0.007980676,0.00006652841,0.005115386],"study_design_scores_gemma":[0.00021319695,0.0009123652,0.0009863275,0.000017247712,0.000032165553,0.0002460652,0.000100278805,0.12908545,0.8590401,0.0044384613,0.0048901173,0.00003828945],"about_ca_topic_score_codex":0.00019726457,"about_ca_topic_score_gemma":0.00036957025,"teacher_disagreement_score":0.00132503,"about_ca_system_score_codex":0.00018081178,"about_ca_system_score_gemma":0.00017416729,"threshold_uncertainty_score":0.004432678},"labels":[],"label_agreement":null},{"id":"W2057935751","doi":"10.1088/0268-1242/28/10/105026","title":"Surface depletion and electrical transport model of AlInP-passivated GaAs nanowires","year":2013,"lang":"en","type":"article","venue":"Semiconductor Science and Technology","topic":"Nanowire Synthesis and Applications","field":"Engineering","cited_by":12,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Université de Montréal; McMaster University","funders":"Fondo para la Investigación Científica y Tecnológica; Secretaría de Ciencia y Técnica, Universidad de Buenos Aires; Natural Sciences and Engineering Research Council of Canada; Universidad Nacional de Tucumán","keywords":"Passivation; Fabrication; Nanowire; Materials science; Optoelectronics; Nanotechnology; Capacitance; Photoluminescence; Current density; Characterization (materials science); Chemistry; Layer (electronics); Electrode","score_opus":0.009873170615070615,"score_gpt":0.20656565633337864,"score_spread":0.19669248571830802,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2057935751","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.87762094,0.0006141903,0.11433506,0.00016446196,0.00003473811,0.00004981854,0.0006741686,0.00027714937,0.0062294747],"genre_scores_gemma":[0.97983986,0.0006594057,0.014344248,0.000022214293,0.000012388831,0.00011009974,0.00028261705,0.000035587283,0.0046934807],"study_design_codex":"bench_or_experimental","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9998964,0.000008991174,0.000005422276,0.000029551155,0.000044576253,0.000015111113],"domain_scores_gemma":[0.99991035,0.000026924487,0.000015909523,0.000015983022,0.000024743846,0.000006132176],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000117326985,0.00028986583,0.00034283084,0.00021170524,0.00019262069,0.00037045352,0.00095669855,0.000495234,0.0008026857],"category_scores_gemma":[0.00023795155,0.0002133596,0.00034266387,0.0002178967,0.000205712,0.00043805852,0.00016066541,0.00028015807,0.0003497542],"study_design_candidate":"simulation_or_modeling","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00011241602,0.00006921564,0.0014930436,0.00012923355,0.000043591477,0.0006037087,0.0001393054,0.24563505,0.73491323,0.009532484,0.00037329158,0.006955437],"study_design_scores_gemma":[0.0000033353115,0.000059779974,0.0005380777,0.000005859418,0.000007783802,0.00006054165,0.000015356325,0.9502857,0.047632363,0.00072682905,0.00065789494,0.0000065284917],"about_ca_topic_score_codex":0.003677041,"about_ca_topic_score_gemma":0.0027243113,"teacher_disagreement_score":0.003677041,"about_ca_system_score_codex":0.0007972005,"about_ca_system_score_gemma":0.0002899778,"threshold_uncertainty_score":0.0073112845},"labels":[],"label_agreement":null},{"id":"W2058700420","doi":"10.1088/0268-1242/29/7/075009","title":"Characterization of solution-bonded GaAs/InGaAs/GaAs features on GaAs","year":2014,"lang":"en","type":"article","venue":"Semiconductor Science and Technology","topic":"Semiconductor Quantum Structures and Devices","field":"Physics and Astronomy","cited_by":4,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Simon Fraser University","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Gallium arsenide; Characterization (materials science); Optoelectronics; Materials science; Chemistry; Nanotechnology","score_opus":0.007340406939825223,"score_gpt":0.23626763063147832,"score_spread":0.2289272236916531,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2058700420","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99864966,0.00006735197,0.0007618965,0.00000494818,0.0000025068216,0.0000036828185,0.00008016228,0.000017788976,0.00041208416],"genre_scores_gemma":[0.9972556,0.00006268485,0.0018729621,0.0000068084682,0.0000016093787,0.0000073318133,0.0001399444,0.000009934732,0.00064305944],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99995446,0.0000026065559,0.000002297861,0.000014333706,0.000017182676,0.000009152259],"domain_scores_gemma":[0.9999368,0.000012239655,0.000015794927,0.000010276632,0.000014701796,0.000010099761],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000041617215,0.00017465206,0.00009647989,0.00015087957,0.00013816197,0.00019642728,0.0002582715,0.0001821044,0.0009739965],"category_scores_gemma":[0.0001181505,0.00013613678,0.00008450347,0.00013827096,0.00012351206,0.000120909936,0.000094731884,0.00014866487,0.0002100144],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000007654863,0.000003206757,0.00021163134,0.0000086459,0.0000016162136,0.000017615881,0.000011713776,0.00005568556,0.9993709,0.000017425085,0.0000064280293,0.000287513],"study_design_scores_gemma":[0.000004103496,0.00012507474,0.012017515,0.0000029999094,0.000008738975,0.00012380173,0.00006645217,0.0019117302,0.9852234,0.00001690062,0.0004956388,0.000003680083],"about_ca_topic_score_codex":0.000888929,"about_ca_topic_score_gemma":0.0015455253,"teacher_disagreement_score":0.0009739965,"about_ca_system_score_codex":0.00011579715,"about_ca_system_score_gemma":0.00006303696,"threshold_uncertainty_score":0.0032583475},"labels":[],"label_agreement":null},{"id":"W2059136179","doi":"10.1088/0268-1242/29/8/085009","title":"Tunnel injection InGaN/GaN dot-in-a-wire white-light-emitting diodes","year":2014,"lang":"en","type":"article","venue":"Semiconductor Science and Technology","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":9,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McGill University","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Quantum dot; Optoelectronics; Diode; Light-emitting diode; Injector; Electron; Materials science; Nanowire; Layer (electronics); Physics; Nanotechnology","score_opus":0.009022159923385705,"score_gpt":0.2353701330709706,"score_spread":0.2263479731475849,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2059136179","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9812835,0.00017218346,0.014536982,0.00003852694,0.000025134641,0.000024727155,0.00010529239,0.00015102734,0.0036625643],"genre_scores_gemma":[0.98890734,0.00014491852,0.009042551,0.000013409722,0.000004043417,0.000013191137,0.000053545406,0.0000146434695,0.0018064631],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999287,0.000007725046,0.0000037318284,0.000019466586,0.000024418523,0.000015915597],"domain_scores_gemma":[0.999941,0.000014724532,0.000015672778,0.000009919098,0.000010505901,0.000008221269],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000098451295,0.00015187568,0.00015437456,0.00006024473,0.00011031477,0.0002393984,0.0003117206,0.0001601005,0.0007534383],"category_scores_gemma":[0.000097821496,0.000080771686,0.00010594233,0.00007712338,0.00016112645,0.0002454729,0.00021706021,0.00018086194,0.00020712374],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000048177575,0.000032239663,0.00046573428,0.00003137577,0.0000072745797,0.00011017771,0.000031495387,0.00032422054,0.9942145,0.001733151,0.00008831937,0.0029134445],"study_design_scores_gemma":[0.000009822156,0.00011781604,0.0009975482,0.0000030849953,0.000006887603,0.00016627564,0.00001334228,0.005334765,0.99202746,0.00023908369,0.0010785847,0.0000053015574],"about_ca_topic_score_codex":0.00022242886,"about_ca_topic_score_gemma":0.0006531582,"teacher_disagreement_score":0.0007534383,"about_ca_system_score_codex":0.00012901265,"about_ca_system_score_gemma":0.00011865868,"threshold_uncertainty_score":0.0025205016},"labels":[],"label_agreement":null},{"id":"W2063716039","doi":"10.1088/0268-1242/15/4/315","title":"Energy spectrum of electron in quasiplane superlattice of cylindrical quantum dots","year":2000,"lang":"en","type":"article","venue":"Semiconductor Science and Technology","topic":"Semiconductor Quantum Structures and Devices","field":"Physics and Astronomy","cited_by":12,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Superlattice; Quantum dot; Electron; Energy spectrum; Condensed matter physics; Spectrum (functional analysis); Physics; Energy (signal processing); Atomic physics; Quantum mechanics","score_opus":0.006163487023004739,"score_gpt":0.237880218921249,"score_spread":0.23171673189824427,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2063716039","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.98636836,0.000127913,0.010864743,0.000061955114,0.000009821268,0.0000058968785,0.00003086519,0.00005589411,0.0024745911],"genre_scores_gemma":[0.9958611,0.00004578774,0.0033329166,0.000010365634,0.0000020338434,0.000007121846,0.00004526293,0.00001084778,0.0006846443],"study_design_codex":"bench_or_experimental","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9999279,0.000012436014,0.0000035677444,0.000009502306,0.000030157113,0.000016420143],"domain_scores_gemma":[0.99990094,0.000031247495,0.000012748843,0.000013150437,0.000022201957,0.000019735307],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00012533489,0.00023270924,0.0003023628,0.0003562098,0.00040426117,0.0004501647,0.0002964612,0.0005247341,0.0015471493],"category_scores_gemma":[0.00022284387,0.00015999062,0.00014685468,0.00027158437,0.00046328496,0.00039963593,0.00022973155,0.00024375985,0.00017495555],"study_design_candidate":"simulation_or_modeling","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0007442403,0.00012453206,0.0053282715,0.00020425019,0.00006702865,0.0015736227,0.0003624752,0.10925149,0.7314639,0.1413548,0.0006566082,0.008868794],"study_design_scores_gemma":[0.000067540546,0.00026238838,0.007542921,0.00002417501,0.0000219156,0.00046834478,0.00027071877,0.8672487,0.10327047,0.019481668,0.0012951785,0.000045938406],"about_ca_topic_score_codex":0.00043873847,"about_ca_topic_score_gemma":0.00053210097,"teacher_disagreement_score":0.0015471493,"about_ca_system_score_codex":0.0002725046,"about_ca_system_score_gemma":0.00013471309,"threshold_uncertainty_score":0.0051757693},"labels":[],"label_agreement":null},{"id":"W2064981098","doi":"10.1088/0268-1242/18/8/311","title":"Quantum well intermixing in InGaAsP laser structures using a low temperature grown InP cap layer","year":2003,"lang":"en","type":"article","venue":"Semiconductor Science and Technology","topic":"Semiconductor Lasers and Optical Devices","field":"Engineering","cited_by":11,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McMaster University","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Blueshift; Photoluminescence; Quantum well; Annealing (glass); Sublimation (psychology); Molecular beam epitaxy; Metalorganic vapour phase epitaxy; Materials science; Chemistry; Epitaxy; Growth rate; Optoelectronics; Condensed matter physics; Molecular physics; Laser; Layer (electronics); Optics; Nanotechnology; Composite material","score_opus":0.01177436119611656,"score_gpt":0.23428788092889544,"score_spread":0.22251351973277889,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2064981098","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9989491,0.000044297576,0.00062171125,0.000014296317,0.000004667136,0.000007335108,0.00002525418,0.00002758798,0.00030577366],"genre_scores_gemma":[0.9974015,0.000071108596,0.0017802395,0.000006325105,0.0000028092575,0.000015795167,0.00003949065,0.000007395319,0.0006753454],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99991953,0.000006245706,0.0000033519545,0.000025072211,0.000029000823,0.000016853117],"domain_scores_gemma":[0.99989736,0.000013713981,0.000042088148,0.000010179573,0.000018324246,0.000018293133],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000085213374,0.0002645358,0.00021118025,0.00013102879,0.0002465051,0.0002678641,0.0004041589,0.00024727767,0.0006480801],"category_scores_gemma":[0.000112931804,0.00024483268,0.00017082115,0.00014033659,0.00022746024,0.00024863583,0.00020832379,0.0002597455,0.00013679077],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000021766213,0.00001244603,0.000113839575,0.000012000434,0.000002054362,0.000024417439,0.000016350907,0.00014703862,0.99927515,0.000082599894,0.000011065812,0.00028121794],"study_design_scores_gemma":[0.00002030592,0.0002816246,0.002478617,0.000003404627,0.000011470427,0.000046116143,0.00001626025,0.003880788,0.99279237,0.00004708332,0.00041658746,0.0000053316353],"about_ca_topic_score_codex":0.0017439115,"about_ca_topic_score_gemma":0.0029885948,"teacher_disagreement_score":0.0017439115,"about_ca_system_score_codex":0.0005797133,"about_ca_system_score_gemma":0.00026668145,"threshold_uncertainty_score":0.004206121},"labels":[],"label_agreement":null},{"id":"W2065345886","doi":"10.1088/0268-1242/29/8/085002","title":"Electrical characterization of in-place bonded interfaces","year":2014,"lang":"en","type":"article","venue":"Semiconductor Science and Technology","topic":"Integrated Circuits and Semiconductor Failure Analysis","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Simon Fraser University; University of Victoria; McGill University","funders":"","keywords":"Characterization (materials science); Materials science; Nanotechnology; Chemistry; Optoelectronics","score_opus":0.004450078551940596,"score_gpt":0.19474840618270492,"score_spread":0.19029832763076432,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2065345886","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99271214,0.00042314382,0.00453013,0.000034258723,0.000023916416,0.000017245024,0.0003725641,0.00010210972,0.0017844294],"genre_scores_gemma":[0.99504495,0.0002740143,0.0026996955,0.000027422797,0.000009652875,0.000027812492,0.00027066027,0.000028723829,0.0016170783],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99984753,0.000010853628,0.0000075800594,0.000033011136,0.000073778836,0.000027144099],"domain_scores_gemma":[0.9996511,0.000078731835,0.00005961269,0.000041981344,0.00014486416,0.000023757244],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00014140044,0.00030663193,0.00022813182,0.00038854918,0.00020824633,0.00028995043,0.0004885007,0.00041609368,0.0021650933],"category_scores_gemma":[0.00043495442,0.00014649412,0.000119559576,0.00030902142,0.00019595289,0.0002641439,0.00017750497,0.00047206425,0.00031223666],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000028340806,0.000020412688,0.0007050126,0.000045251392,0.0000074018185,0.00009169015,0.00007872529,0.00013048176,0.99715143,0.00008328555,0.000065922504,0.0015921452],"study_design_scores_gemma":[0.0000062027707,0.00020632893,0.017505841,0.000010260811,0.000024338595,0.00019454234,0.00023397796,0.0029474737,0.97732544,0.000081549704,0.0014549888,0.000009092257],"about_ca_topic_score_codex":0.00041049582,"about_ca_topic_score_gemma":0.00054099684,"teacher_disagreement_score":0.0021650933,"about_ca_system_score_codex":0.0001286413,"about_ca_system_score_gemma":0.000076289514,"threshold_uncertainty_score":0.007242918},"labels":[],"label_agreement":null},{"id":"W2065935270","doi":"10.1088/0268-1242/20/8/030","title":"High power blue–violet InGaN laser diodes grown on bulk GaN substrates by plasma-assisted molecular beam epitaxy","year":2005,"lang":"en","type":"article","venue":"Semiconductor Science and Technology","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":42,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Institute for Microstructural Sciences","funders":"","keywords":"Molecular beam epitaxy; Optoelectronics; Diode; Materials science; Laser; Plasma; Blue laser; Nitride; Quantum well; Duty cycle; Power density; Current density; Epitaxy; Optics; Voltage; Power (physics); Nanotechnology; Physics","score_opus":0.007474900374531633,"score_gpt":0.22587049129950842,"score_spread":0.2183955909249768,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2065935270","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.96150744,0.0010811802,0.006809556,0.0006788793,0.00014756482,0.00010892863,0.0009299569,0.00071078294,0.028025717],"genre_scores_gemma":[0.97126085,0.00071012473,0.007111213,0.00012253333,0.00005935357,0.000043493837,0.0007102544,0.00016355337,0.019818516],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998305,0.0000141709015,0.000004761574,0.00002584219,0.00009175746,0.00003291347],"domain_scores_gemma":[0.9998424,0.000051553234,0.000014427959,0.00002634717,0.000042162887,0.00002310036],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0003202821,0.0001974264,0.0004116314,0.00029858493,0.0003894425,0.00053928397,0.0004961939,0.00030168644,0.0056604343],"category_scores_gemma":[0.00026095734,0.0003600099,0.00016349556,0.00030763217,0.00028288882,0.00047476622,0.0002579678,0.00046243516,0.0015230877],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0000861389,0.00002013323,0.00030536822,0.00005744313,0.000008950679,0.00004640052,0.000053382733,0.00011050628,0.99603313,0.000511988,0.0009494117,0.0018172776],"study_design_scores_gemma":[0.000051645853,0.00013099395,0.0071297726,0.000012896868,0.000015664105,0.00016613175,0.000040231687,0.0019146171,0.9815732,0.0003984556,0.008554104,0.000012236179],"about_ca_topic_score_codex":0.0009853058,"about_ca_topic_score_gemma":0.0023626292,"teacher_disagreement_score":0.0056604343,"about_ca_system_score_codex":0.00042381042,"about_ca_system_score_gemma":0.00020860226,"threshold_uncertainty_score":0.018936098},"labels":[],"label_agreement":null},{"id":"W2066651896","doi":"10.1088/0268-1242/21/7/008","title":"The effect of different proximity caps on quantum well intermixing in InGaAsP/InP QW structures","year":2006,"lang":"en","type":"article","venue":"Semiconductor Science and Technology","topic":"Semiconductor Quantum Structures and Devices","field":"Physics and Astronomy","cited_by":11,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McMaster University","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Quantum well; Photoluminescence; Annealing (glass); Materials science; Optoelectronics; Transmission electron microscopy; Luminescence; Condensed matter physics; Chemistry; Molecular physics; Optics; Nanotechnology; Physics; Laser","score_opus":0.0044570267996235395,"score_gpt":0.23658403765545327,"score_spread":0.23212701085582974,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2066651896","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9982181,0.00025071538,0.0009354345,0.000016592725,0.000005404086,0.000012442864,0.000035171313,0.00003042036,0.00049557304],"genre_scores_gemma":[0.9984162,0.00018567091,0.0010859984,0.000008434984,0.0000038971566,0.000009588126,0.000027406264,0.000012941704,0.00024987897],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99986446,0.000020492855,0.000008978873,0.00003700588,0.000045057997,0.000024065359],"domain_scores_gemma":[0.99970657,0.00009140618,0.0001069957,0.000022894803,0.00003612285,0.000036033285],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00017739364,0.00037406938,0.00026057547,0.00014357289,0.0002219266,0.00045971546,0.00033947005,0.000246397,0.00063813204],"category_scores_gemma":[0.00041994362,0.0003968301,0.00017225755,0.00018094458,0.00025843037,0.00037062148,0.00031004392,0.00021938242,0.0001354695],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00010192918,0.000022358692,0.00026815507,0.000047750153,0.000011356592,0.00007388462,0.000042722215,0.00042540784,0.9979522,0.00006430696,0.0000119317565,0.0009780732],"study_design_scores_gemma":[0.000010784767,0.00036385457,0.0024779444,0.000004207079,0.000023729828,0.000053251868,0.000021344415,0.001699654,0.99507624,0.000015581305,0.00024911645,0.0000043932496],"about_ca_topic_score_codex":0.0006974636,"about_ca_topic_score_gemma":0.0011759475,"teacher_disagreement_score":0.0006974636,"about_ca_system_score_codex":0.00032405346,"about_ca_system_score_gemma":0.00021272765,"threshold_uncertainty_score":0.0023512244},"labels":[],"label_agreement":null},{"id":"W2070785652","doi":"10.1088/0268-1242/16/5/101","title":"Optimization of p-doping in GaAs photon-recycling light-emitting diodes operated at low temperature","year":2001,"lang":"en","type":"article","venue":"Semiconductor Science and Technology","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":8,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Genia Photonics (Canada); Institute for Microstructural Sciences","funders":"Air Force Research Laboratory; U.S. Air Force","keywords":"Beryllium; Doping; Diode; Impurity; Photon; Optoelectronics; Recombination; Light-emitting diode; Chemistry; Atomic physics; Materials science; Optics; Physics","score_opus":0.008301852003088812,"score_gpt":0.21456036362257955,"score_spread":0.20625851161949074,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2070785652","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9942437,0.0012529526,0.0019324712,0.000113577895,0.000025075533,0.00003146872,0.000093233124,0.00008023635,0.0022272938],"genre_scores_gemma":[0.99583924,0.00049635966,0.0022301418,0.000026873617,0.000009311104,0.000023573532,0.00007120593,0.000075975055,0.0012273872],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9997657,0.000028893066,0.000021135314,0.000062004314,0.00007597797,0.00004644041],"domain_scores_gemma":[0.99969757,0.00011045809,0.00008014185,0.000020619143,0.00006274857,0.000028454822],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00033782012,0.00039655343,0.0005404709,0.0003159826,0.0006471345,0.00122967,0.0006428687,0.0005429897,0.0009370709],"category_scores_gemma":[0.0006946026,0.00036409113,0.0003209319,0.00042295235,0.00029461368,0.00050789793,0.00027536997,0.00027080558,0.0004248897],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00095908466,0.0001388746,0.0017944489,0.00020813123,0.000038588998,0.00012779377,0.00010771891,0.0033605178,0.98619634,0.00054012326,0.00024269716,0.0062857536],"study_design_scores_gemma":[0.000049989947,0.0004016748,0.0020883197,0.000026149071,0.000041629057,0.000101297104,0.000052889663,0.0098736165,0.98640037,0.000096885866,0.00085010385,0.000017074271],"about_ca_topic_score_codex":0.0026994233,"about_ca_topic_score_gemma":0.0050721527,"teacher_disagreement_score":0.0026994233,"about_ca_system_score_codex":0.001176082,"about_ca_system_score_gemma":0.0007332136,"threshold_uncertainty_score":0.00853318},"labels":[],"label_agreement":null},{"id":"W2072323881","doi":"10.1088/0268-1242/24/12/125002","title":"Radiative defect state identification in semi-insulating GaAs using photo-carrier Radiometry","year":2009,"lang":"en","type":"article","venue":"Semiconductor Science and Technology","topic":"Thermography and Photoacoustic Techniques","field":"Engineering","cited_by":12,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Toronto","funders":"Natural Sciences and Engineering Research Council of Canada; Canada Research Chairs","keywords":"Photoluminescence; Radiometry; Diffusion; Radiative transfer; Spontaneous emission; Materials science; Optoelectronics; Quantum efficiency; Optics; Carrier lifetime; Chemistry; Analytical Chemistry (journal); Physics; Silicon; Laser","score_opus":0.009680205324618016,"score_gpt":0.24545379434100048,"score_spread":0.23577358901638246,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2072323881","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.98559594,0.00021460422,0.013726068,0.000016331469,0.000005076013,0.000013344008,0.00006492187,0.000075273565,0.00028840144],"genre_scores_gemma":[0.9899128,0.00012282051,0.009622566,0.0000043912505,0.0000013394258,0.00001169324,0.00004897386,0.000009938092,0.0002656227],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998012,0.000045842728,0.000012190655,0.000043021333,0.00007436597,0.000023350754],"domain_scores_gemma":[0.99962974,0.00013757692,0.000087723856,0.00007272883,0.000057766018,0.000014418661],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0002922227,0.00025338263,0.00017808068,0.00037355607,0.00011681292,0.00040991194,0.00047885202,0.0002380278,0.00039841566],"category_scores_gemma":[0.00077375385,0.00020100761,0.00015486286,0.00021625706,0.00040506473,0.0003130208,0.00022570712,0.00023878587,0.00012877569],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00004743924,0.00001145405,0.0009178466,0.000027931235,0.0000045800057,0.000030740564,0.000036276862,0.00069945323,0.9947643,0.00019322296,0.000013561918,0.0032530841],"study_design_scores_gemma":[0.0000053538697,0.00014829323,0.0031324206,0.000004687469,0.000010475553,0.00014696755,0.0000330903,0.014784702,0.98135304,0.00013604765,0.00023355066,0.000011274827],"about_ca_topic_score_codex":0.00068823865,"about_ca_topic_score_gemma":0.000778168,"teacher_disagreement_score":0.00068823865,"about_ca_system_score_codex":0.0001934421,"about_ca_system_score_gemma":0.00014303069,"threshold_uncertainty_score":0.0015454888},"labels":[],"label_agreement":null},{"id":"W2077195848","doi":"10.1088/0268-1242/15/2/302","title":"Erbium-doped Si<sub>1-<i>x</i></sub>Ge<sub><i>x</i></sub>/Si structures for light emitting diodes","year":2000,"lang":"en","type":"article","venue":"Semiconductor Science and Technology","topic":"Silicon Nanostructures and Photoluminescence","field":"Materials Science","cited_by":10,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"CMC Microsystems (Canada)","funders":"Ministry of Education, India; University of Surrey; Engineering and Physical Sciences Research Council; Ministry of Earth Sciences","keywords":"Electroluminescence; Germanium; Erbium; Light-emitting diode; Doping; Materials science; Quantum well; Silicon; Optoelectronics; Analytical Chemistry (journal); Chemistry; Optics; Physics; Nanotechnology; Laser","score_opus":0.009040799065085153,"score_gpt":0.23179005516961543,"score_spread":0.22274925610453028,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2077195848","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9834237,0.0015661702,0.010091277,0.00009815439,0.00003911296,0.000040444233,0.00041153663,0.00021292409,0.0041166767],"genre_scores_gemma":[0.970642,0.0015166596,0.01967627,0.00005825292,0.00001345614,0.00005282746,0.0007424011,0.00006075673,0.0072374353],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99993396,0.000006681554,0.0000046410837,0.00001848196,0.000023582586,0.000012622981],"domain_scores_gemma":[0.999928,0.000010013473,0.00001790752,0.000013260231,0.000023071183,0.000007723568],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00011139265,0.00033052277,0.00021558652,0.0001251851,0.000107760425,0.0002305652,0.00034668235,0.00024898528,0.0013054991],"category_scores_gemma":[0.000120195255,0.00018538689,0.0001996503,0.00016548559,0.00012781072,0.00022759063,0.00014683692,0.00024032165,0.0006419863],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000016862712,0.0000061021638,0.00012929701,0.000034488425,0.000003568653,0.00001776655,0.0000074231357,0.00017806778,0.99823856,0.00010426786,0.000037090096,0.0012263499],"study_design_scores_gemma":[0.0000062520166,0.000066845314,0.0015164001,0.0000060097877,0.00000752932,0.00006735771,0.0000089863215,0.0010084346,0.99579215,0.000029200386,0.0014873191,0.0000034878778],"about_ca_topic_score_codex":0.00042459695,"about_ca_topic_score_gemma":0.0012203255,"teacher_disagreement_score":0.0013054991,"about_ca_system_score_codex":0.00034067562,"about_ca_system_score_gemma":0.00018397534,"threshold_uncertainty_score":0.004367292},"labels":[],"label_agreement":null},{"id":"W2080772202","doi":"10.1088/0268-1242/18/6/324","title":"Quantum well intermixing enhanced by InP grown by He-plasma assisted GaS source MBE","year":2003,"lang":"en","type":"article","venue":"Semiconductor Science and Technology","topic":"Semiconductor Quantum Structures and Devices","field":"Physics and Astronomy","cited_by":2,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McMaster University","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Blueshift; Quantum well; Photoluminescence; Molecular beam epitaxy; Optoelectronics; Annealing (glass); Epitaxy; Plasma; Materials science; Luminescence; Chemistry; Layer (electronics); Optics; Nanotechnology; Laser; Physics; Composite material","score_opus":0.007699876414734372,"score_gpt":0.23637013192322157,"score_spread":0.22867025550848719,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2080772202","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9970591,0.00022611156,0.0018809668,0.000019594981,0.0000053698086,0.000008895007,0.00003527941,0.000037457197,0.0007272685],"genre_scores_gemma":[0.99489874,0.0002510461,0.003515721,0.000004752573,0.000003354006,0.000009157985,0.00004105303,0.000015161647,0.0012610402],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999194,0.000007666438,0.0000030486083,0.000017574745,0.00003235352,0.00001995331],"domain_scores_gemma":[0.99990845,0.000025055702,0.000025855914,0.00001134337,0.000016704662,0.000012562397],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00013682366,0.00033473558,0.0002723763,0.0001326996,0.00014708424,0.0002622981,0.0002447552,0.00017367309,0.00086092524],"category_scores_gemma":[0.00021868407,0.00019842281,0.00010506146,0.00015724423,0.00017781905,0.00033181312,0.00020201711,0.00020956554,0.00016275766],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000022298644,0.000009374493,0.00011740417,0.000013261801,0.0000020310533,0.000021872103,0.000016295624,0.00009926196,0.99908733,0.000083328676,0.000011011617,0.00051653624],"study_design_scores_gemma":[0.000007398921,0.0000650357,0.0008660807,0.0000014526414,0.000005297542,0.000028575225,0.000006507121,0.0015779459,0.99690944,0.00002365716,0.00050677126,0.0000018423062],"about_ca_topic_score_codex":0.0009894308,"about_ca_topic_score_gemma":0.0014510162,"teacher_disagreement_score":0.0009894308,"about_ca_system_score_codex":0.00025588393,"about_ca_system_score_gemma":0.000121252364,"threshold_uncertainty_score":0.0028800964},"labels":[],"label_agreement":null},{"id":"W2083762902","doi":"10.1088/0268-1242/25/6/065007","title":"Enhancement of light output power of GaN-based light-emitting diodes using a SiO<sub>2</sub>nano-scale structure on a p-GaN surface","year":2010,"lang":"en","type":"article","venue":"Semiconductor Science and Technology","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":19,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Luxmux Technology (Canada)","funders":"National Science Council","keywords":"Light-emitting diode; Optoelectronics; Nano-; Diode; Materials science; Nanoscopic scale; Power (physics); Gallium nitride; Surface (topology); Scale (ratio); Optics; Physics; Nanotechnology; Mathematics; Layer (electronics); Composite material; Geometry","score_opus":0.008319720646270184,"score_gpt":0.23640966508567748,"score_spread":0.2280899444394073,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2083762902","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9942238,0.00026547138,0.003438379,0.000039486054,0.000016610486,0.000008565901,0.000063103704,0.000086081774,0.001858582],"genre_scores_gemma":[0.99437135,0.00022542378,0.003848326,0.00002642844,0.000012303055,0.000011196387,0.000053186795,0.000023151319,0.0014286801],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999443,0.0000071192826,0.0000027079586,0.000014433283,0.000020117557,0.000011189667],"domain_scores_gemma":[0.9999167,0.000030120127,0.0000127780495,0.0000073608758,0.000021689955,0.000011359518],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00007850943,0.0002555085,0.00013548874,0.000091449256,0.00006157387,0.0001664803,0.0001548258,0.00018401796,0.0008531461],"category_scores_gemma":[0.00012363838,0.00011794372,0.00019982494,0.00011976646,0.00017711258,0.00018842985,0.00011071702,0.00019803611,0.00021160796],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000020973777,0.000006296804,0.0001268823,0.000011494414,0.0000025838926,0.000015353819,0.0000074189666,0.000075754324,0.99913186,0.000036465924,0.000016982864,0.00054797257],"study_design_scores_gemma":[0.000009650303,0.00010343953,0.00292087,0.0000018748152,0.000008057734,0.0000394171,0.000008465171,0.0018420458,0.9945655,0.00002563071,0.00047239958,0.000002614741],"about_ca_topic_score_codex":0.00029032354,"about_ca_topic_score_gemma":0.00046215314,"teacher_disagreement_score":0.0008531461,"about_ca_system_score_codex":0.00015305805,"about_ca_system_score_gemma":0.00008278685,"threshold_uncertainty_score":0.0028540492},"labels":[],"label_agreement":null},{"id":"W2090946780","doi":"10.1088/0268-1242/26/10/105012","title":"On the tendency of temperature and electric field dependences of interface recombination in a P3HT:PCBM organic bulk heterojunction solar cell","year":2011,"lang":"en","type":"article","venue":"Semiconductor Science and Technology","topic":"Organic Electronics and Photovoltaics","field":"Engineering","cited_by":7,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Saskatchewan","funders":"","keywords":"Electric field; Recombination; Heterojunction; Solar cell; Charge carrier; Field (mathematics); Condensed matter physics; Charge (physics); Chemistry; Materials science; Physics; Optoelectronics; Quantum mechanics","score_opus":0.006790682951065691,"score_gpt":0.18802436047525628,"score_spread":0.1812336775241906,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2090946780","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9905338,0.00033208748,0.0076588406,0.000049913622,0.0000061721826,0.000006020023,0.0000624792,0.00013692143,0.0012137794],"genre_scores_gemma":[0.99890256,0.00010585857,0.00078102533,0.0000050233543,0.0000042859633,0.0000033047395,0.000034121753,0.000012786754,0.00015109351],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99996054,0.000005424025,0.0000012329386,0.000012580233,0.000012171964,0.000008117499],"domain_scores_gemma":[0.99967706,0.00020959933,0.000037491172,0.000023169761,0.000043828695,0.0000087997105],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00017512447,0.00019911269,0.00016844383,0.000306741,0.00010663305,0.00017002245,0.0002036121,0.00020126172,0.0005587374],"category_scores_gemma":[0.00057762663,0.00009383068,0.00015662113,0.00017452703,0.0002784522,0.00023490972,0.00006801959,0.00032092183,0.00011158157],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00028748356,0.00009205437,0.0036969285,0.00013938543,0.000028434231,0.00040409362,0.00018476103,0.033105996,0.9518234,0.0016930082,0.00015340559,0.008391019],"study_design_scores_gemma":[0.000030376503,0.00042630683,0.020392638,0.000017796321,0.000057163703,0.00040844857,0.00008811764,0.390851,0.5858856,0.0012873583,0.00051501876,0.000040231313],"about_ca_topic_score_codex":0.00031012995,"about_ca_topic_score_gemma":0.00024377611,"teacher_disagreement_score":0.0005587374,"about_ca_system_score_codex":0.00012701082,"about_ca_system_score_gemma":0.00007476319,"threshold_uncertainty_score":0.001869142},"labels":[],"label_agreement":null},{"id":"W2092014631","doi":"10.1088/0268-1242/26/4/045009","title":"Defect-enhanced photo-detection at 1550 nm in a silicon waveguide formed via LOCOS","year":2011,"lang":"en","type":"article","venue":"Semiconductor Science and Technology","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":5,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Carleton University; McMaster University","funders":"","keywords":"Responsivity; LOCOS; Materials science; Silicon; Optoelectronics; Photodiode; Polycrystalline silicon; Waveguide; Silicon photonics; Optical power; Optics; Layer (electronics); Silicon nitride; Photodetector; Nanotechnology","score_opus":0.013736635708379944,"score_gpt":0.2015008618390822,"score_spread":0.18776422613070226,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2092014631","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9892125,0.0002848373,0.0097751515,0.000028190074,0.000018814168,0.000010914463,0.00006518216,0.00013220005,0.00047214516],"genre_scores_gemma":[0.97871655,0.00021048317,0.019490635,0.000023487779,0.000013199169,0.000023300396,0.00011161558,0.000023238594,0.0013876193],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99986553,0.000012876948,0.0000059487775,0.00004220401,0.00005104071,0.000022378028],"domain_scores_gemma":[0.9997559,0.000061418716,0.00008557025,0.00002407615,0.000047282258,0.000025758256],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00018670972,0.00026881607,0.00022288381,0.00016646823,0.00008800198,0.00033354358,0.00044171693,0.0002802938,0.00033793578],"category_scores_gemma":[0.00024841525,0.0002319397,0.00016792376,0.00013815037,0.00023481074,0.00027898687,0.00021842586,0.00025214898,0.00018959172],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000037830945,0.000012755232,0.00054548646,0.000018333705,0.0000050417925,0.000050252922,0.000019338564,0.00009060246,0.9979512,0.00006823528,0.00001864161,0.001182274],"study_design_scores_gemma":[0.000010833006,0.00024008704,0.002154383,0.0000034014306,0.000013872669,0.00014484633,0.000015456832,0.0026700124,0.9940269,0.000027779532,0.0006875953,0.000004911555],"about_ca_topic_score_codex":0.00046533477,"about_ca_topic_score_gemma":0.00079861574,"teacher_disagreement_score":0.00046533477,"about_ca_system_score_codex":0.0002261336,"about_ca_system_score_gemma":0.00016828136,"threshold_uncertainty_score":0.0016407967},"labels":[],"label_agreement":null},{"id":"W2093438404","doi":"10.1088/0268-1242/27/3/035002","title":"Patterned gold-assisted growth of GaP nanowires on Si","year":2012,"lang":"en","type":"article","venue":"Semiconductor Science and Technology","topic":"Nanowire Synthesis and Applications","field":"Engineering","cited_by":15,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McMaster University","funders":"","keywords":"Nanowire; Nanotechnology; Materials science; Silicon nanowires; Optoelectronics","score_opus":0.018857240377226296,"score_gpt":0.23746182869528829,"score_spread":0.21860458831806198,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2093438404","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9934283,0.0004021922,0.0028618658,0.000048240356,0.000052780244,0.000025273017,0.00017685094,0.00012620538,0.0028782007],"genre_scores_gemma":[0.9906262,0.00028086387,0.0071007274,0.000025699575,0.0000085717265,0.000018512088,0.0001673978,0.000032667627,0.0017393201],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99990153,0.00000899326,0.0000079145675,0.00003199237,0.000028697117,0.000020869953],"domain_scores_gemma":[0.99991643,0.000024344354,0.00001813586,0.000018380288,0.000012564834,0.000010187363],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00007243489,0.00023916754,0.0002827389,0.0001261341,0.000120486264,0.00029369636,0.00027408334,0.00027210815,0.0007180756],"category_scores_gemma":[0.00017871294,0.00025126824,0.00014516215,0.00013408986,0.00013349993,0.00016041989,0.00021993976,0.00023846963,0.00044943712],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000017263961,0.000009516207,0.00010265122,0.000032967095,0.0000032821579,0.00007866535,0.000025697676,0.00018333916,0.9983259,0.00011054885,0.00005634927,0.001053738],"study_design_scores_gemma":[0.0000051366496,0.00004626787,0.00078953285,0.0000025103936,0.0000030352917,0.00004095413,0.000013042364,0.0020433827,0.99640745,0.000025582143,0.0006203187,0.0000027687877],"about_ca_topic_score_codex":0.0005014096,"about_ca_topic_score_gemma":0.0016399504,"teacher_disagreement_score":0.0007180756,"about_ca_system_score_codex":0.00026234984,"about_ca_system_score_gemma":0.00016644014,"threshold_uncertainty_score":0.002402246},"labels":[],"label_agreement":null},{"id":"W2105369925","doi":"10.1088/0268-1242/24/8/085008","title":"Enhanced light output power of GaN-based vertical-injection light-emitting diodes with a 12-fold photonic quasi-crystal by nano-imprint lithography","year":2009,"lang":"en","type":"article","venue":"Semiconductor Science and Technology","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":29,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Luxmux Technology (Canada)","funders":"","keywords":"Optoelectronics; Light-emitting diode; Materials science; Lithography; Photonic crystal; Diode; OLED; Nano-; Nanosphere lithography; Optics; Thin film; Photonics; Optical power; Nanotechnology; Layer (electronics); Fabrication; Laser; Physics","score_opus":0.006111648392257782,"score_gpt":0.22128165277884831,"score_spread":0.21517000438659054,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2105369925","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.98125124,0.0004499089,0.01544866,0.000088218614,0.000034579338,0.0000139153735,0.00017400579,0.00018832195,0.0023512214],"genre_scores_gemma":[0.9862786,0.00029494718,0.01171052,0.00003118064,0.000011568911,0.000015441015,0.00007896844,0.000033150307,0.0015457805],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99990475,0.0000104241235,0.00000565329,0.000021716087,0.000038295602,0.000019211004],"domain_scores_gemma":[0.9998877,0.000038488117,0.000023914208,0.000011752114,0.000025829795,0.000012275595],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00012121295,0.0002785786,0.00023712964,0.00011284009,0.000073847514,0.00029935167,0.0003180805,0.00019577827,0.000816935],"category_scores_gemma":[0.0001425956,0.00020305876,0.00018809095,0.00015279646,0.00018425271,0.00021346664,0.00015218619,0.0003185524,0.0002381479],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000012023911,0.000004910286,0.00009479491,0.000016181113,0.0000024022813,0.000013697679,0.000006415401,0.000100562895,0.9988182,0.0000689029,0.000027478945,0.00083442754],"study_design_scores_gemma":[0.0000051218167,0.000038409602,0.00093305344,0.0000020764508,0.000005433351,0.00003908813,0.0000041864414,0.0020291328,0.9965688,0.000021208418,0.00035005977,0.0000034033417],"about_ca_topic_score_codex":0.00048502238,"about_ca_topic_score_gemma":0.00073227304,"teacher_disagreement_score":0.000816935,"about_ca_system_score_codex":0.00027902357,"about_ca_system_score_gemma":0.0001432536,"threshold_uncertainty_score":0.0027329326},"labels":[],"label_agreement":null},{"id":"W2106028416","doi":"10.1088/0268-1242/22/1/s50","title":"Study of the relaxation of strain in patterned Si/SiGe structures using an x-ray diffraction technique","year":2006,"lang":"en","type":"article","venue":"Semiconductor Science and Technology","topic":"Semiconductor Quantum Structures and Devices","field":"Physics and Astronomy","cited_by":8,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"","funders":"Deutsches Elektronen-Synchrotron; Ryerson University","keywords":"Diffraction; Materials science; Anisotropy; Condensed matter physics; Lattice (music); Substrate (aquarium); Relaxation (psychology); Lattice constant; Strain (injury); X-ray crystallography; Crystallography; Optics; Chemistry; Physics","score_opus":0.018092040510136694,"score_gpt":0.27900557160600825,"score_spread":0.26091353109587156,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2106028416","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9986646,0.0002587795,0.0005867848,0.00002033078,0.0000048589,0.0000046176933,0.000038391543,0.000012060474,0.00040951523],"genre_scores_gemma":[0.9979448,0.00017180349,0.0011442542,0.000010408395,0.000004722877,0.000007822114,0.00010380762,0.000007714515,0.00060472026],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998946,0.0000086764485,0.000005341705,0.000022263177,0.000044376182,0.000024705614],"domain_scores_gemma":[0.9997452,0.00006583832,0.00006598654,0.000040950174,0.0000617966,0.000020090432],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00009619657,0.00017254063,0.00021338646,0.00016835086,0.000263398,0.00028675483,0.0002877797,0.0002613495,0.00071088475],"category_scores_gemma":[0.00036984798,0.00021666569,0.00011536886,0.00020389457,0.000387798,0.00023888472,0.00012618126,0.0002852766,0.00011511456],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0000656969,0.000028585164,0.0012802995,0.000035907244,0.0000123523005,0.00015064912,0.000073294796,0.0002479978,0.9964986,0.000063743784,0.000030667405,0.0015121457],"study_design_scores_gemma":[0.000028506658,0.0003380744,0.034926284,0.00001204919,0.000034947978,0.00041270288,0.00019015688,0.004684004,0.958276,0.00004755831,0.0010390023,0.000010774692],"about_ca_topic_score_codex":0.0008717377,"about_ca_topic_score_gemma":0.0010209136,"teacher_disagreement_score":0.0008717377,"about_ca_system_score_codex":0.0001705988,"about_ca_system_score_gemma":0.00010850086,"threshold_uncertainty_score":0.0023781061},"labels":[],"label_agreement":null},{"id":"W2127646874","doi":"10.1088/0268-1242/21/7/006","title":"Arrays of periodic submicron conductive links in Si covered by SiO<sub>2</sub>formed by polarized laser irradiation","year":2006,"lang":"en","type":"article","venue":"Semiconductor Science and Technology","topic":"Laser Material Processing Techniques","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Polytechnique Montréal","funders":"Core Research for Evolutional Science and Technology; Polytechnique Montréal","keywords":"Irradiation; Laser; Electrical conductor; Materials science; Optoelectronics; Silicon; Optics; Composite material; Physics","score_opus":0.003930063109814092,"score_gpt":0.19322791446305262,"score_spread":0.18929785135323854,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2127646874","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99640405,0.00011854545,0.0025479042,0.00001619054,0.000012463181,0.000008151539,0.000043611268,0.00006218512,0.0007869386],"genre_scores_gemma":[0.99102926,0.0001218868,0.007606441,0.000015207086,0.000009602886,0.000015036369,0.00007889042,0.000012695288,0.0011109493],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99989104,0.000007071875,0.000005128199,0.00004155032,0.00003073834,0.000024441111],"domain_scores_gemma":[0.9997882,0.00003709698,0.00007914135,0.000030070883,0.000026959327,0.000038516857],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0000586645,0.00026317558,0.00014310013,0.00018898025,0.00016331031,0.00022769222,0.00020323192,0.00027319058,0.000797262],"category_scores_gemma":[0.00013300095,0.00030800785,0.0001344795,0.0002150718,0.00025832985,0.0001901129,0.00021630221,0.00021291416,0.00024200938],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000021067737,0.0000063505004,0.00021052685,0.000012264081,0.000003203255,0.00006818322,0.000014430952,0.00023382851,0.99844223,0.000042776468,0.000018880819,0.00092626957],"study_design_scores_gemma":[0.000016987207,0.0002205131,0.005837474,0.0000032230566,0.000016448023,0.00023238774,0.000043131506,0.00297829,0.9894525,0.0000583395,0.0011338573,0.000006910939],"about_ca_topic_score_codex":0.00024210493,"about_ca_topic_score_gemma":0.00076959137,"teacher_disagreement_score":0.000797262,"about_ca_system_score_codex":0.00018203392,"about_ca_system_score_gemma":0.00013439823,"threshold_uncertainty_score":0.002667129},"labels":[],"label_agreement":null},{"id":"W2132094409","doi":"10.1088/0268-1242/22/12/007","title":"Optical emission from InAs/InP self-assembled quantum dots: evidence for As/P intermixing","year":2007,"lang":"en","type":"article","venue":"Semiconductor Science and Technology","topic":"Semiconductor Quantum Structures and Devices","field":"Physics and Astronomy","cited_by":9,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Polytechnique Montréal; Université de Montréal; University of Ottawa; Regroupement Québécois sur les Matériaux de Pointe","funders":"Natural Sciences and Engineering Research Council of Canada; Fonds Québécois de la Recherche sur la Nature et les Technologies","keywords":"Photoluminescence; Quantum dot; Exciton; Monolayer; Photoluminescence excitation; Quantum well; Materials science; Condensed matter physics; Ground state; Excitation; Emission spectrum; Spectral line; Molecular physics; Optoelectronics; Chemistry; Physics; Atomic physics; Nanotechnology; Optics; Laser","score_opus":0.025082333845034558,"score_gpt":0.33104175442614564,"score_spread":0.3059594205811111,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2132094409","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9989785,0.00008480919,0.0006181444,0.0000136323915,0.0000027253504,0.0000025738336,0.000021472713,0.000014227153,0.00026384136],"genre_scores_gemma":[0.9990609,0.00005768895,0.0006434407,0.0000065800496,0.0000013106168,0.0000036403035,0.000024985071,0.0000047518784,0.00019672513],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99987435,0.000014497191,0.000009467155,0.000033347464,0.000043316835,0.000025154206],"domain_scores_gemma":[0.9997868,0.000058860915,0.000053264266,0.000026458329,0.000042941272,0.000031689764],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00019192841,0.00032633278,0.0001906035,0.00021083782,0.000255211,0.00032783425,0.00026819835,0.0002505926,0.0005640056],"category_scores_gemma":[0.0002808253,0.00023730811,0.00012948518,0.00014359248,0.0003995411,0.00040159895,0.00025338118,0.000315935,0.00010260555],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00002310927,0.000011023066,0.0004931142,0.000013301492,0.000004399169,0.000043826978,0.00003989719,0.000088139765,0.99894124,0.00009985428,0.000009625141,0.00023250784],"study_design_scores_gemma":[0.0000060852126,0.000048839363,0.003987123,0.0000025350062,0.000009301513,0.00006576425,0.000051914172,0.0027527679,0.9927939,0.00007763805,0.00020022687,0.000003918349],"about_ca_topic_score_codex":0.0006060625,"about_ca_topic_score_gemma":0.0007810873,"teacher_disagreement_score":0.0006060625,"about_ca_system_score_codex":0.00024688942,"about_ca_system_score_gemma":0.00008742427,"threshold_uncertainty_score":0.001886785},"labels":[],"label_agreement":null},{"id":"W2139704193","doi":"10.1088/0268-1242/20/9/r01","title":"Nonlinear optics in high refractive index contrast periodic structures","year":2005,"lang":"en","type":"article","venue":"Semiconductor Science and Technology","topic":"Photonic Crystals and Applications","field":"Physics and Astronomy","cited_by":25,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of British Columbia","funders":"","keywords":"Refractive index; Planar; Optics; Photonic crystal; Bistability; Refractive index contrast; Photonics; Nonlinear optics; Optical bistability; Semiconductor; Second-harmonic generation; Nonlinear system; Optoelectronics; Contrast (vision); Materials science; Physics; Computer science; Fabrication; Laser","score_opus":0.0065251099675606,"score_gpt":0.2555058474185489,"score_spread":0.24898073745098834,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2139704193","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.5757338,0.060239494,0.072065905,0.0017382866,0.0006719717,0.00008782088,0.00012943993,0.0003981443,0.2889351],"genre_scores_gemma":[0.93911034,0.015993476,0.02033071,0.00023519919,0.0002638848,0.000051030347,0.000102319485,0.000058153175,0.02385489],"study_design_codex":"bench_or_experimental","study_design_gemma":"not_applicable","domain_scores_codex":[0.9999403,0.000009963851,0.000001760147,0.00000939075,0.000029332989,0.000009235791],"domain_scores_gemma":[0.9999249,0.00003950468,0.000016014043,0.0000068503855,0.000008143465,0.0000046588198],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00010385332,0.00017393676,0.00016283015,0.00016812836,0.0002414392,0.0004903126,0.00014554482,0.00023368355,0.002226355],"category_scores_gemma":[0.00021976221,0.0001345766,0.00009960581,0.00012705951,0.0004396834,0.00039905615,0.00024680095,0.00026949096,0.00044967796],"study_design_candidate":"not_applicable","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00011076883,0.00007733139,0.0010723062,0.0010554934,0.000031666812,0.0013082845,0.0003412758,0.015781295,0.5737686,0.3192894,0.0028668898,0.084296755],"study_design_scores_gemma":[0.00010718076,0.0005618608,0.008125065,0.00025349186,0.000050904473,0.0051186485,0.00037959687,0.10004978,0.4200984,0.32537398,0.13976657,0.000114515846],"about_ca_topic_score_codex":0.00017892249,"about_ca_topic_score_gemma":0.00025839856,"teacher_disagreement_score":0.002226355,"about_ca_system_score_codex":0.00022933938,"about_ca_system_score_gemma":0.00009773413,"threshold_uncertainty_score":0.0074478984},"labels":[],"label_agreement":null},{"id":"W2142883833","doi":"10.1088/0268-1242/26/2/025014","title":"Texture analysis of GaAs nanowires","year":2010,"lang":"en","type":"article","venue":"Semiconductor Science and Technology","topic":"Nanowire Synthesis and Applications","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McMaster University","funders":"","keywords":"Nanowire; Texture (cosmology); Materials science; Chemistry; Condensed matter physics; Crystallography; Optoelectronics; Physics; Computer science; Artificial intelligence; Image (mathematics)","score_opus":0.004540460003094663,"score_gpt":0.21848096160769484,"score_spread":0.21394050160460018,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2142883833","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9702771,0.000813742,0.023164965,0.00006128512,0.000053131913,0.000034098728,0.0012515082,0.0002331888,0.0041109803],"genre_scores_gemma":[0.987626,0.00047487122,0.009286273,0.000021771055,0.000014714984,0.00002707166,0.0007531464,0.000064121064,0.0017320402],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998902,0.0000054316406,0.000006304342,0.000018849076,0.00005140189,0.000027752072],"domain_scores_gemma":[0.9998872,0.000017494282,0.000019121635,0.000011724614,0.00005008987,0.000014359449],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000071369854,0.00011847463,0.00021317437,0.0008396383,0.00027776364,0.0004765888,0.00013442284,0.000118512144,0.0011278812],"category_scores_gemma":[0.00022421681,0.0001154569,0.00013811112,0.0006395729,0.00012381902,0.00015238092,0.00016074082,0.00018170477,0.00018387046],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000083719075,0.000007012018,0.0015962964,0.000040183942,0.000005805987,0.00005112444,0.000035503694,0.00017768904,0.9906831,0.0001681641,0.000097145276,0.007054231],"study_design_scores_gemma":[0.00001737146,0.0001122604,0.042729095,0.000009035034,0.000025389452,0.00048298234,0.0002247422,0.010665465,0.9410792,0.00026885245,0.004368028,0.000017661318],"about_ca_topic_score_codex":0.0015875448,"about_ca_topic_score_gemma":0.0021944738,"teacher_disagreement_score":0.0015875448,"about_ca_system_score_codex":0.00018228455,"about_ca_system_score_gemma":0.00011766692,"threshold_uncertainty_score":0.0037730932},"labels":[],"label_agreement":null},{"id":"W2148344725","doi":"10.1088/0268-1242/26/7/075019","title":"Bipolar and unipolar resistive switching behaviors of sol–gel-derived SrTiO<sub>3</sub>thin films with different compliance currents","year":2011,"lang":"en","type":"article","venue":"Semiconductor Science and Technology","topic":"Advanced Memory and Neural Computing","field":"Engineering","cited_by":42,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Geological Survey of Canada","funders":"","keywords":"Materials science; Thin film; Resistive touchscreen; Compliance (psychology); Condensed matter physics; Insulator (electricity); Substrate (aquarium); Current (fluid); Metal; Optoelectronics; Nanotechnology; Electrical engineering; Psychology; Physics","score_opus":0.02892716981162265,"score_gpt":0.23630679468311644,"score_spread":0.20737962487149378,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2148344725","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9988649,0.0001923914,0.0002261785,0.000026709535,0.000010034356,0.0000058172177,0.000065381006,0.00001940756,0.00058920914],"genre_scores_gemma":[0.9984945,0.0001932568,0.00070008304,0.000022243667,0.0000069427592,0.000010255939,0.00007922368,0.000012172215,0.00048135736],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999175,0.000009627888,0.00000888973,0.0000147758965,0.000027953454,0.000021095446],"domain_scores_gemma":[0.99978155,0.00006464024,0.000063799365,0.000020053796,0.000042045805,0.000027976776],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00011468125,0.00020570357,0.00017976231,0.00021413344,0.000120303266,0.00022144934,0.00019074914,0.0002324491,0.0014001942],"category_scores_gemma":[0.00028478826,0.00015970759,0.00017104004,0.00016336591,0.00015899011,0.00017776462,0.00008826234,0.0003625842,0.00016857815],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00004282846,0.0000063955645,0.00010689377,0.000020307314,0.000005311249,0.00003806351,0.000025822717,0.000037165886,0.99933064,0.000020111058,0.000017714838,0.0003486182],"study_design_scores_gemma":[0.000012250923,0.000116149204,0.0028012614,0.0000051818197,0.000016763051,0.000070684604,0.000040066694,0.0010067178,0.99568224,0.000014215807,0.00023004517,0.0000045274196],"about_ca_topic_score_codex":0.00057109544,"about_ca_topic_score_gemma":0.00090008083,"teacher_disagreement_score":0.0014001942,"about_ca_system_score_codex":0.00016273098,"about_ca_system_score_gemma":0.000069765905,"threshold_uncertainty_score":0.00468415},"labels":[],"label_agreement":null},{"id":"W2170380761","doi":"10.1088/0268-1242/19/10/l02","title":"Analytical model for a current density versus voltage relation in n+   n+ devices","year":2004,"lang":"en","type":"article","venue":"Semiconductor Science and Technology","topic":"Radiation Effects in Electronics","field":"Engineering","cited_by":4,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Polytechnique Montréal","funders":"","keywords":"Current (fluid); Relation (database); Current density; Materials science; Physics; Thermodynamics; Computer science; Data mining; Quantum mechanics","score_opus":0.018614855078281093,"score_gpt":0.2771823874263883,"score_spread":0.2585675323481072,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2170380761","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.040773805,0.0028855482,0.92080075,0.00074232137,0.00020251384,0.00018655932,0.00032106164,0.0011202263,0.032967243],"genre_scores_gemma":[0.84517246,0.00430689,0.113969564,0.0006382644,0.00032043547,0.00058367633,0.0002902891,0.00026996835,0.03444842],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99975365,0.00004165677,0.000012694194,0.000044711913,0.00011454591,0.00003273958],"domain_scores_gemma":[0.9997416,0.00011840913,0.00003061428,0.00003467862,0.00006307275,0.000011569315],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00039931203,0.00072029175,0.0007803411,0.00080332084,0.00048249797,0.0008918402,0.0023283914,0.001591692,0.0030469063],"category_scores_gemma":[0.0015579269,0.00041459998,0.0006331363,0.0006269245,0.0007927181,0.0016461656,0.0004075434,0.0008866282,0.0017327905],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00008456908,0.00014003037,0.0004974209,0.00041605468,0.00006409468,0.00068701815,0.0004623625,0.6020244,0.099889934,0.26779234,0.0038648492,0.02407694],"study_design_scores_gemma":[0.000006178046,0.00003103841,0.000102276004,0.00001887569,0.000011092933,0.00016763533,0.000012391028,0.97482705,0.0022066867,0.0196792,0.0029270602,0.00001053914],"about_ca_topic_score_codex":0.0013744634,"about_ca_topic_score_gemma":0.0015668516,"teacher_disagreement_score":0.0030469063,"about_ca_system_score_codex":0.00093223224,"about_ca_system_score_gemma":0.0005398127,"threshold_uncertainty_score":0.010192871},"labels":[],"label_agreement":null},{"id":"W2279276734","doi":"10.1088/0268-1242/30/9/094007","title":"MBE growth optimization for GaAs<sub>1−<i>x</i></sub>Bi<sub><i>x</i></sub>and dependence of photoluminescence on growth temperature","year":2015,"lang":"en","type":"article","venue":"Semiconductor Science and Technology","topic":"Semiconductor Quantum Structures and Devices","field":"Physics and Astronomy","cited_by":27,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of British Columbia; University of Victoria","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Photoluminescence; Molecular beam epitaxy; Band gap; Stoichiometry; Substrate (aquarium); Materials science; Analytical Chemistry (journal); Growth rate; Intensity (physics); Epitaxy; Condensed matter physics; Chemistry; Optoelectronics; Optics; Nanotechnology; Physical chemistry; Physics","score_opus":0.011801009924949394,"score_gpt":0.23439058024895257,"score_spread":0.22258957032400317,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2279276734","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99230206,0.0018492526,0.00343205,0.00012902472,0.000030502428,0.000042573247,0.0005647125,0.000111769405,0.0015381852],"genre_scores_gemma":[0.98096806,0.0019500811,0.013419767,0.000049656835,0.0000100902835,0.00015242044,0.0006599352,0.00012693106,0.0026631048],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998517,0.000013051016,0.00001575731,0.000046985064,0.000046036366,0.000026548109],"domain_scores_gemma":[0.9998679,0.000028915456,0.000033547123,0.000014782393,0.00004265451,0.000012201996],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00013482696,0.00047598063,0.00047724205,0.0002407264,0.00029538656,0.0004148437,0.00033680187,0.00029792095,0.0011731677],"category_scores_gemma":[0.0003756122,0.00035926607,0.00018620392,0.0003230331,0.00011560519,0.00026411618,0.00025286907,0.00032628677,0.00048495887],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000035767596,0.000009235939,0.00027868547,0.000055620538,0.000005050983,0.000027077418,0.000020981697,0.00018065864,0.99858296,0.000028428709,0.000047288122,0.00072829425],"study_design_scores_gemma":[0.000010077911,0.00007095123,0.005304225,0.000009687488,0.000015152473,0.000055963115,0.000049684942,0.0011944071,0.9914069,0.000020833044,0.0018536238,0.000008630351],"about_ca_topic_score_codex":0.0024026027,"about_ca_topic_score_gemma":0.004764916,"teacher_disagreement_score":0.0024026027,"about_ca_system_score_codex":0.00038642538,"about_ca_system_score_gemma":0.00019086977,"threshold_uncertainty_score":0.0047772527},"labels":[],"label_agreement":null},{"id":"W2329051939","doi":"10.1088/0268-1242/31/5/055008","title":"On the origins of near-surface stresses in silicon around Cu-filled and CNT-filled through silicon vias","year":2016,"lang":"en","type":"article","venue":"Semiconductor Science and Technology","topic":"3D IC and TSV technologies","field":"Engineering","cited_by":7,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of British Columbia","funders":"Natural Sciences and Engineering Research Council of Canada; Agency for Science, Technology and Research","keywords":"Materials science; Stress (linguistics); Silicon; Composite material; Thermal expansion; Through-silicon via; Raman spectroscopy; Compressive strength; Work (physics); Oxide; Carbon nanotube; Metallurgy; Optics; Mechanical engineering","score_opus":0.016619177402244178,"score_gpt":0.23872651858829547,"score_spread":0.2221073411860513,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2329051939","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9982516,0.00014784129,0.0012058225,0.000009018273,0.0000047882577,0.0000029851062,0.000032021562,0.000016882112,0.00032899145],"genre_scores_gemma":[0.99936885,0.00006320612,0.0003861475,0.000002655216,0.000001780047,0.000002748831,0.000023272996,0.0000032372225,0.00014804883],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99992716,0.0000042512474,0.0000028353952,0.000020327732,0.00002861038,0.000016826201],"domain_scores_gemma":[0.9998282,0.000033972698,0.000051797084,0.000014253058,0.00005299635,0.000018668676],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00007386589,0.0001782978,0.00014079016,0.00026127,0.0001751375,0.00024394073,0.00014978998,0.00017454433,0.00054904725],"category_scores_gemma":[0.00016718723,0.00013450516,0.0001321512,0.00015794749,0.00043592136,0.00028557974,0.00015353048,0.00015136531,0.00009900968],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00005523034,0.000008014052,0.0018368805,0.000023518964,0.0000060858365,0.00011190754,0.00015063716,0.00089871715,0.9949051,0.00022118699,0.000020346746,0.0017624032],"study_design_scores_gemma":[0.000007561933,0.0002541445,0.04740116,0.000013759626,0.000020552583,0.00028096273,0.00048945396,0.011543461,0.9387875,0.00029071112,0.0008862001,0.000024442996],"about_ca_topic_score_codex":0.00093198224,"about_ca_topic_score_gemma":0.0017944017,"teacher_disagreement_score":0.00093198224,"about_ca_system_score_codex":0.00021223535,"about_ca_system_score_gemma":0.00013054392,"threshold_uncertainty_score":0.0018531084},"labels":[],"label_agreement":null},{"id":"W2336169177","doi":"10.1088/0268-1242/31/6/065007","title":"Defect energy levels in p-type GaAsBi and GaAs grown by MBE at low temperatures","year":2016,"lang":"en","type":"article","venue":"Semiconductor Science and Technology","topic":"Semiconductor Quantum Structures and Devices","field":"Physics and Astronomy","cited_by":14,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of British Columbia; University of Victoria; Simon Fraser University","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Energy (signal processing); Materials science; Chemistry; Optoelectronics; Physics","score_opus":0.008312314361171464,"score_gpt":0.2349869560932656,"score_spread":0.22667464173209412,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2336169177","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9992162,0.00025239633,0.00017409412,0.000013122495,0.0000015511429,0.0000025911881,0.0000828233,0.0000071237323,0.00025005438],"genre_scores_gemma":[0.99843377,0.0002091754,0.00048503492,0.000007650011,0.0000017742888,0.000013186685,0.00017189897,0.00000939359,0.0006682387],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999057,0.000009431036,0.00000490722,0.000021697457,0.00003596242,0.00002229436],"domain_scores_gemma":[0.99989426,0.000029718769,0.000026259157,0.0000090368,0.000022841956,0.00001790806],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00010810614,0.00020287842,0.00024686684,0.00026924416,0.00024449817,0.00043541778,0.00031887298,0.00031947545,0.0008797454],"category_scores_gemma":[0.00032012427,0.0002894378,0.000094264025,0.00022384984,0.00030131073,0.00027869205,0.00020259405,0.00029926948,0.00020974225],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000104673236,0.000010432647,0.0008373603,0.000028883696,0.0000045841457,0.000022400665,0.000050682313,0.00018456244,0.99826497,0.00010202377,0.000013269981,0.0003760649],"study_design_scores_gemma":[0.00002628303,0.00024437983,0.023143793,0.000014116729,0.000021193417,0.000110036075,0.0001324211,0.0036173256,0.9719305,0.00009779179,0.0006489223,0.000013108838],"about_ca_topic_score_codex":0.0042508575,"about_ca_topic_score_gemma":0.004524401,"teacher_disagreement_score":0.0042508575,"about_ca_system_score_codex":0.00051832176,"about_ca_system_score_gemma":0.00018467958,"threshold_uncertainty_score":0.008452237},"labels":[],"label_agreement":null},{"id":"W2416124522","doi":"10.1088/0268-1242/31/11/114004","title":"Electrical characterization of chemical and dielectric passivation of InAs nanowires","year":2016,"lang":"en","type":"article","venue":"Semiconductor Science and Technology","topic":"Nanowire Synthesis and Applications","field":"Engineering","cited_by":16,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McMaster University; University of Waterloo","funders":"Canada Foundation for Innovation; Ontario Centres of Excellence; Natural Sciences and Engineering Research Council of Canada; Lockheed Martin","keywords":"Passivation; Nanowire; Dielectric; Field-effect transistor; Quantum dot; Hysteresis; Gate dielectric; Field effect; Oxide","score_opus":0.005302514783282069,"score_gpt":0.19583010400734635,"score_spread":0.1905275892240643,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2416124522","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9960175,0.0004970374,0.002557511,0.000017370245,0.000013998734,0.00001633275,0.00025766002,0.000024582396,0.00059798924],"genre_scores_gemma":[0.99533194,0.000555872,0.0027979494,0.000015533165,0.0000061704586,0.000035105895,0.00030313563,0.000020804951,0.0009334862],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99987423,0.000014371962,0.000011417629,0.000028877856,0.000049319195,0.000021685662],"domain_scores_gemma":[0.9997528,0.00006724951,0.00006267465,0.000035016787,0.000064815176,0.000017339691],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0001585922,0.00027265016,0.00023669189,0.00020003255,0.00014876456,0.00024816714,0.00019568384,0.00021927181,0.0004644516],"category_scores_gemma":[0.00042077352,0.00013900691,0.00015732313,0.00023152123,0.0001993718,0.00013477103,0.00009342979,0.00018776536,0.00013383005],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000011791442,0.0000050555586,0.00026438112,0.000019058201,0.0000032503963,0.000018406039,0.00002052338,0.00008958116,0.9991844,0.000028071348,0.0000064378537,0.00034899026],"study_design_scores_gemma":[0.0000034097964,0.00012891793,0.0049761413,0.0000034256925,0.000009615411,0.000046224188,0.00003825197,0.0009398024,0.9933775,0.0000242393,0.0004495385,0.0000030004146],"about_ca_topic_score_codex":0.0005344931,"about_ca_topic_score_gemma":0.00071409164,"teacher_disagreement_score":0.0005344931,"about_ca_system_score_codex":0.00014240199,"about_ca_system_score_gemma":0.00010200976,"threshold_uncertainty_score":0.0015537143},"labels":[],"label_agreement":null},{"id":"W2417846854","doi":"10.1088/0268-1242/31/7/074003","title":"Epitaxial Fe on free-standing GaAs nanowires","year":2016,"lang":"en","type":"article","venue":"Semiconductor Science and Technology","topic":"Nanowire Synthesis and Applications","field":"Engineering","cited_by":3,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Simon Fraser University","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Epitaxy; Nanowire; Optoelectronics; Materials science; Chemistry; Nanotechnology; Condensed matter physics; Physics; Layer (electronics)","score_opus":0.010455617734205672,"score_gpt":0.21744274191427032,"score_spread":0.20698712418006465,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2417846854","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9945972,0.00038669453,0.0017549294,0.000038154936,0.000044017528,0.000011164945,0.00028316924,0.00004575401,0.0028389085],"genre_scores_gemma":[0.9933595,0.00030085954,0.002629062,0.000013948189,0.000010804836,0.000011965887,0.00019905885,0.000015944288,0.0034588454],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999087,0.000003933429,0.000004411142,0.000028698254,0.00002848372,0.000025760988],"domain_scores_gemma":[0.9999187,0.00001984187,0.000016604421,0.000015646205,0.00001852707,0.000010735495],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000056244793,0.00021038199,0.00019532816,0.000100514626,0.00018640928,0.00024094591,0.0003233764,0.00027228022,0.0012487795],"category_scores_gemma":[0.00020322631,0.0002062999,0.00010075127,0.00013819872,0.00012550208,0.000198215,0.00016245455,0.00027779012,0.00046614572],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000027102791,0.000007223508,0.0001539742,0.000032011732,0.0000033951148,0.00008118514,0.000015377895,0.00017023929,0.9984022,0.00012500404,0.00007211891,0.0009100798],"study_design_scores_gemma":[0.0000077356435,0.000037700465,0.0028949429,0.000008291017,0.000004781963,0.00006943269,0.000017869343,0.001813871,0.9937224,0.00003344213,0.0013864969,0.0000031680904],"about_ca_topic_score_codex":0.0013889703,"about_ca_topic_score_gemma":0.0040746517,"teacher_disagreement_score":0.0013889703,"about_ca_system_score_codex":0.00020336453,"about_ca_system_score_gemma":0.00008756786,"threshold_uncertainty_score":0.0041775703},"labels":[],"label_agreement":null},{"id":"W2519483524","doi":"10.1088/0268-1242/31/10/10lt01","title":"Molecular beam epitaxy growth and optical properties of single crystal Zn<sub>3</sub>N<sub>2</sub>films","year":2016,"lang":"en","type":"article","venue":"Semiconductor Science and Technology","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":20,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of British Columbia; University of Victoria","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Molecular beam epitaxy; Sapphire; Single crystal; Epitaxy; Materials science; Crystal growth; Band gap; Optoelectronics; Electron mobility; Hall effect; Analytical Chemistry (journal); Crystallography; Chemistry; Optics; Nanotechnology; Electrical resistivity and conductivity; Laser; Physics","score_opus":0.010494673346371775,"score_gpt":0.20389063091936158,"score_spread":0.1933959575729898,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2519483524","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.98938495,0.0017345236,0.0041519427,0.00009991607,0.000026581025,0.00007064599,0.0018513303,0.0000953384,0.002584866],"genre_scores_gemma":[0.9790356,0.0023483778,0.012778227,0.000031455846,0.000011176569,0.00012030794,0.0010621183,0.000058618753,0.004554189],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99989355,0.000008747259,0.0000053395092,0.000026641645,0.000048589325,0.00001704493],"domain_scores_gemma":[0.9999151,0.000022017186,0.0000210249,0.000009919495,0.000026984433,0.000004993623],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00016130644,0.00031374802,0.00034541372,0.00016255076,0.00018644199,0.00018085938,0.00036251385,0.00025247398,0.0009703388],"category_scores_gemma":[0.00021460927,0.00026860295,0.0001552517,0.0003291417,0.00012397153,0.00014772573,0.00009835165,0.00024250505,0.00028837565],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000057687455,0.00001147025,0.00046263414,0.00009866549,0.000008123873,0.000042528234,0.000021906151,0.000742242,0.99702483,0.00015788022,0.00011314287,0.0012589631],"study_design_scores_gemma":[0.000013492218,0.00006472498,0.0055093183,0.0000058493197,0.000010297498,0.00005729046,0.000018633027,0.0055956556,0.9865459,0.000025653837,0.0021469125,0.00000625061],"about_ca_topic_score_codex":0.0045565204,"about_ca_topic_score_gemma":0.0059845434,"teacher_disagreement_score":0.0045565204,"about_ca_system_score_codex":0.00060120295,"about_ca_system_score_gemma":0.00015784091,"threshold_uncertainty_score":0.009059966},"labels":[],"label_agreement":null},{"id":"W2522269635","doi":"10.1088/0268-1242/31/10/105017","title":"Ultrafast carrier dynamics and the role of grain boundaries in polycrystalline silicon thin films grown by molecular beam epitaxy","year":2016,"lang":"en","type":"article","venue":"Semiconductor Science and Technology","topic":"Terahertz technology and applications","field":"Engineering","cited_by":29,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"National Research Council Canada; University of Alberta","funders":"Natural Sciences and Engineering Research Council of Canada; Canada Foundation for Innovation; Alberta Innovates - Technology Futures","keywords":"Molecular beam epitaxy; Crystallite; Grain boundary; Ultrashort pulse; Silicon; Materials science; Dynamics (music); Chemical physics; Thin film; Polycrystalline silicon; Epitaxy; Optoelectronics; Chemistry; Crystallography; Nanotechnology; Optics; Physics; Microstructure; Thin-film transistor","score_opus":0.0019275418591647333,"score_gpt":0.1822470876702799,"score_spread":0.18031954581111515,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2522269635","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9968297,0.0012323372,0.0010138665,0.00015705977,0.0000160372,0.0000032804098,0.000051196832,0.000020408806,0.0006760271],"genre_scores_gemma":[0.9979037,0.0004925576,0.0005848048,0.000019763474,0.000004866453,0.0000056752287,0.00004614626,0.000011419213,0.00093112997],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99997103,0.0000020921752,0.0000011552635,0.0000067917513,0.0000111492,0.000007678629],"domain_scores_gemma":[0.9999213,0.000043381875,0.000012763106,0.0000057473426,0.00001025828,0.0000065711993],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00008776515,0.00010190486,0.00012264289,0.000114260234,0.00023541285,0.0004410946,0.00023241586,0.00026294886,0.0008367862],"category_scores_gemma":[0.00028472525,0.00017808934,0.00006170095,0.00010400753,0.00027491114,0.0006221481,0.000113998074,0.00037604017,0.00009750988],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000111608184,0.000024434972,0.0015754513,0.00004086776,0.000008143643,0.00009779257,0.00012320439,0.00064068433,0.9930172,0.0015786014,0.00016923295,0.002612727],"study_design_scores_gemma":[0.000062802705,0.000117824056,0.021260435,0.000019279352,0.000020359907,0.00011377525,0.00017403503,0.034255784,0.94081885,0.00083376485,0.002301319,0.000021679602],"about_ca_topic_score_codex":0.0030548107,"about_ca_topic_score_gemma":0.0033911353,"teacher_disagreement_score":0.0030548107,"about_ca_system_score_codex":0.00043206973,"about_ca_system_score_gemma":0.00019100484,"threshold_uncertainty_score":0.0060740113},"labels":[],"label_agreement":null},{"id":"W2583312648","doi":"10.1088/1361-6641/aa5cfb","title":"Piezoelectricity of 2D nanomaterials: characterization, properties, and applications","year":2017,"lang":"en","type":"article","venue":"Semiconductor Science and Technology","topic":"2D Materials and Applications","field":"Materials Science","cited_by":72,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Toronto","funders":"Natural Sciences and Engineering Research Council of Canada; National Natural Science Foundation of China","keywords":"Piezoelectricity; Nanotechnology; Characterization (materials science); Nanomaterials; Nanoelectronics; Materials science","score_opus":0.02495432292189533,"score_gpt":0.24940382898551897,"score_spread":0.22444950606362363,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2583312648","genre_codex":"empirical","genre_gemma":"review","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"review","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.6697123,0.08725304,0.20915222,0.002819518,0.0004561256,0.00024603534,0.0021639005,0.00039529626,0.027801571],"genre_scores_gemma":[0.8484601,0.025369367,0.12122961,0.00036752192,0.00015754729,0.00020372585,0.00081763655,0.000053633135,0.003340833],"study_design_codex":"bench_or_experimental","study_design_gemma":"not_applicable","domain_scores_codex":[0.9996393,0.00003444094,0.000021659778,0.000072835166,0.00021312822,0.000018741364],"domain_scores_gemma":[0.9997918,0.000105647385,0.00003628479,0.000016985234,0.000039569666,0.0000097936],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0005049331,0.00028256536,0.00028691234,0.00078686845,0.0003219048,0.00055951835,0.00033757353,0.00066288444,0.00061474345],"category_scores_gemma":[0.0006774408,0.00032489764,0.00018456516,0.000557091,0.00048931694,0.00088096166,0.00040133676,0.00049838267,0.00015105389],"study_design_candidate":"not_applicable","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000033163717,0.00003252544,0.002233506,0.0007142101,0.000011919291,0.00020832852,0.00014188547,0.0018726337,0.9492369,0.004098849,0.0005887322,0.040827375],"study_design_scores_gemma":[0.000013409206,0.00024906322,0.012599962,0.000121898214,0.000020616772,0.0024142396,0.0002213966,0.018369038,0.9148434,0.0047083474,0.046353623,0.00008501325],"about_ca_topic_score_codex":0.0003256084,"about_ca_topic_score_gemma":0.00083460385,"teacher_disagreement_score":0.00078686845,"about_ca_system_score_codex":0.0003874632,"about_ca_system_score_gemma":0.00022767787,"threshold_uncertainty_score":0.002811253},"labels":[],"label_agreement":null},{"id":"W2588321010","doi":"10.1088/1361-6641/aa600e","title":"Influence of carbon doping and hydrogen co-doping on acceptor related optical transitions in ZnO nanowires","year":2017,"lang":"en","type":"article","venue":"Semiconductor Science and Technology","topic":"ZnO doping and properties","field":"Materials Science","cited_by":2,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Simon Fraser University","funders":"Natural Sciences and Engineering Research Council of Canada; Deutsche Forschungsgemeinschaft","keywords":"Doping; Nanowire; Acceptor; Hydrogen; Materials science; Carbon fibers; Chemistry; Nanotechnology; Optoelectronics; Condensed matter physics; Physics","score_opus":0.01833275364347233,"score_gpt":0.2742528063919735,"score_spread":0.2559200527485012,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2588321010","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99727184,0.0005130886,0.00053535745,0.00006312452,0.000038941398,0.000005257134,0.000120701865,0.000022733628,0.0014289964],"genre_scores_gemma":[0.9989103,0.00020188048,0.00027288287,0.000010225883,0.00000408121,0.000003286793,0.00004829833,0.000012334428,0.0005368542],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999254,0.00000596998,0.000006349123,0.00002145039,0.000025699508,0.000015147432],"domain_scores_gemma":[0.9998456,0.00006242693,0.00003277143,0.00000786134,0.000026218118,0.000025034327],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000087997614,0.00015832386,0.00014714834,0.000114445385,0.00018077315,0.0003269637,0.000229888,0.00019448908,0.0009560265],"category_scores_gemma":[0.0002986615,0.00016144356,0.00012981205,0.00014299169,0.0001639114,0.0002026493,0.000097432174,0.00024584625,0.00014160362],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00023819391,0.000025511998,0.00039895187,0.00004048711,0.000007826123,0.0000634891,0.00003642876,0.00020018267,0.9975768,0.00013539419,0.00006243925,0.0012142747],"study_design_scores_gemma":[0.000009495975,0.00006601182,0.0022600815,0.000005094272,0.000014091796,0.000023748531,0.000030696738,0.0020765602,0.9950878,0.000034441393,0.00038768136,0.000004373953],"about_ca_topic_score_codex":0.0019643034,"about_ca_topic_score_gemma":0.0033706692,"teacher_disagreement_score":0.0019643034,"about_ca_system_score_codex":0.00039178584,"about_ca_system_score_gemma":0.00013683096,"threshold_uncertainty_score":0.0039057732},"labels":[],"label_agreement":null},{"id":"W2746071247","doi":"10.1088/1361-6641/aa860c","title":"A low-cost fabrication method for sub-millimeter wave GaAs Schottky diode","year":2017,"lang":"en","type":"article","venue":"Semiconductor Science and Technology","topic":"Superconducting and THz Device Technology","field":"Physics and Astronomy","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"École de Technologie Supérieure; Université de Sherbrooke","funders":"Université de Sherbrooke","keywords":"Schottky diode; Fabrication; Optoelectronics; Extremely high frequency; Millimeter; Diode; Materials science; Optics; Physics","score_opus":0.03052741968449381,"score_gpt":0.31107332186870473,"score_spread":0.28054590218421094,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2746071247","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.29788083,0.0028535693,0.6739365,0.000689422,0.00051768404,0.00021099884,0.0005895123,0.0017003887,0.021621121],"genre_scores_gemma":[0.79460514,0.0008720552,0.1991462,0.00008046795,0.000030213492,0.00010080119,0.00018259355,0.00009388306,0.0048886966],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999244,0.0000071998725,0.0000024367996,0.000012791049,0.000044993583,0.000008275646],"domain_scores_gemma":[0.9999399,0.000015097063,0.000012701222,0.000011868232,0.000016552787,0.0000037719158],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00006623411,0.00021042832,0.0002151635,0.00010782579,0.00019823542,0.00025508399,0.00033613175,0.00027825186,0.0014300512],"category_scores_gemma":[0.00014634014,0.00013659474,0.00024043713,0.00011222362,0.000084886284,0.00023979909,0.00010495652,0.00024458376,0.0005778843],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000034936405,0.00002963818,0.0009576219,0.0003419658,0.00003949096,0.00025544973,0.00008066781,0.014998954,0.9490391,0.006255551,0.0013030221,0.026663583],"study_design_scores_gemma":[0.000053571774,0.00043787705,0.0045015085,0.00004399337,0.00006543282,0.001647731,0.000088643894,0.13861275,0.78259766,0.0026627567,0.06922636,0.00006180532],"about_ca_topic_score_codex":0.00054960017,"about_ca_topic_score_gemma":0.0010174821,"teacher_disagreement_score":0.0014300512,"about_ca_system_score_codex":0.00033091215,"about_ca_system_score_gemma":0.00048633467,"threshold_uncertainty_score":0.0047840476},"labels":[],"label_agreement":null},{"id":"W2769496635","doi":"10.1088/1361-6641/aa99fd","title":"Direct measurement of AC electrokinetics properties and capture frequencies of silicon and silicon–germanium nanowires","year":2017,"lang":"en","type":"article","venue":"Semiconductor Science and Technology","topic":"Nanowire Synthesis and Applications","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Institut interdisciplinaire d'innovation technologique; Université de Sherbrooke","funders":"","keywords":"Silicon; Germanium; Silicon nanowires; Materials science; Nanowire; Electrokinetic phenomena; Optoelectronics; Silicon-germanium; Nanotechnology","score_opus":0.023543704298086426,"score_gpt":0.21681924243253484,"score_spread":0.19327553813444842,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2769496635","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9858431,0.00073489925,0.011537153,0.000039194154,0.000016823087,0.000014735408,0.00009589707,0.000039688777,0.001678605],"genre_scores_gemma":[0.99612087,0.00020951204,0.0030208325,0.000012136877,0.0000073218785,0.000011733,0.00004373797,0.000009111843,0.00056459353],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9997825,0.000024221143,0.000008526245,0.000061327286,0.000093632254,0.00002964542],"domain_scores_gemma":[0.9997489,0.000115207404,0.000043541455,0.000020275147,0.000051474726,0.000020635565],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00022664691,0.00029483312,0.0001737942,0.00043972282,0.00016691964,0.00030657437,0.00022712087,0.0003085098,0.00074437045],"category_scores_gemma":[0.0003723845,0.00017655581,0.000105657426,0.00016661767,0.0003673993,0.00035422828,0.00028234025,0.00030460776,0.00018364987],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00002716859,0.0000064643286,0.00047205336,0.000017695485,0.0000037331542,0.000010640104,0.000024412411,0.000062740844,0.9976774,0.00014509154,0.0000165079,0.0015362717],"study_design_scores_gemma":[0.0000034373622,0.00003704182,0.002565828,0.0000035228122,0.0000056040694,0.000042362313,0.000029880774,0.0016063893,0.9952436,0.000050446393,0.0004074793,0.00000435519],"about_ca_topic_score_codex":0.00041963588,"about_ca_topic_score_gemma":0.0006474531,"teacher_disagreement_score":0.00074437045,"about_ca_system_score_codex":0.00026282904,"about_ca_system_score_gemma":0.0000911994,"threshold_uncertainty_score":0.0024901628},"labels":[],"label_agreement":null},{"id":"W2770698054","doi":"10.1088/1361-6641/aa9b57","title":"Electrical characterization of Si/InN nanowire heterojunctions","year":2017,"lang":"en","type":"article","venue":"Semiconductor Science and Technology","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":5,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McGill University; Simon Fraser University","funders":"Natural Sciences and Engineering Research Council of Canada; Forschungszentrum Jülich; Canadian Network for Research and Innovation in Machining Technology, Natural Sciences and Engineering Research Council of Canada","keywords":"Nanowire; Heterojunction; Materials science; Doping; Rectification; Optoelectronics; Dopant; Scanning electron microscope; Band gap; Condensed matter physics; Voltage","score_opus":0.013020448512571947,"score_gpt":0.2567033109205709,"score_spread":0.24368286240799897,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2770698054","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9972996,0.0002605431,0.00095724215,0.00001204175,0.000016074075,0.000005746948,0.00019710687,0.000021033455,0.001230641],"genre_scores_gemma":[0.9973072,0.00016536523,0.0009295626,0.000011137297,0.0000056907024,0.0000095160385,0.00028551056,0.000010151665,0.0012759522],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998903,0.000006981912,0.000006687191,0.000028746621,0.000049237555,0.000018005823],"domain_scores_gemma":[0.99983716,0.000049429666,0.000024278224,0.000022964887,0.000050849398,0.000015154072],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00012963169,0.0001518457,0.00019104472,0.00018404692,0.00018059812,0.0003005599,0.00017655262,0.0001678194,0.0007745163],"category_scores_gemma":[0.00019303878,0.0000868539,0.000085245156,0.00020928279,0.00013527625,0.0001979657,0.00010185919,0.00011187029,0.00012912847],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000023182645,0.000012269227,0.0011127945,0.000021865131,0.0000055249393,0.000060866885,0.000021215505,0.00014555534,0.99767596,0.00007579768,0.000025227431,0.00081982673],"study_design_scores_gemma":[0.0000058129463,0.00022325746,0.033267044,0.000008940908,0.000020967327,0.00016446188,0.00010413901,0.0036528949,0.9613374,0.00009407476,0.0011145424,0.000006421582],"about_ca_topic_score_codex":0.00048081574,"about_ca_topic_score_gemma":0.0012277904,"teacher_disagreement_score":0.0007745163,"about_ca_system_score_codex":0.0001630926,"about_ca_system_score_gemma":0.00008360591,"threshold_uncertainty_score":0.0025909543},"labels":[],"label_agreement":null},{"id":"W2794796749","doi":"10.1088/1361-6641/aaba26","title":"Multistate storage nonvolatile memory device based on ferroelectricity and resistive switching effects of SrBi <sub>2</sub> Ta <sub>2</sub> O <sub>9</sub> films","year":2018,"lang":"en","type":"article","venue":"Semiconductor Science and Technology","topic":"Advanced Memory and Neural Computing","field":"Engineering","cited_by":4,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Geological Survey of Canada","funders":"National Natural Science Foundation of China","keywords":"Ferroelectricity; Non-volatile memory; Materials science; Resistive touchscreen; Optoelectronics; Electrical engineering; Engineering; Dielectric","score_opus":0.007399901892654406,"score_gpt":0.2195433129645153,"score_spread":0.21214341107186088,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2794796749","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99648064,0.00025477854,0.001842164,0.00005074369,0.00002146749,0.000007523289,0.00009303449,0.000112468515,0.0011371935],"genre_scores_gemma":[0.99642193,0.00011853876,0.0020273472,0.000024590126,0.0000062957292,0.000007006929,0.000079714875,0.000009776017,0.001304811],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99994755,0.0000043280297,0.0000045987967,0.000012628295,0.000016923943,0.000013882914],"domain_scores_gemma":[0.99989665,0.000021001026,0.000024460065,0.000018651464,0.000021917478,0.00001728697],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000066711815,0.00016956913,0.0003095212,0.00022699055,0.00017456447,0.00037214495,0.00038135843,0.00026402253,0.001936432],"category_scores_gemma":[0.00014466941,0.00016017593,0.00013061876,0.00025463008,0.00017956273,0.00046955532,0.0002571192,0.00022898037,0.0003148198],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00008488108,0.000021847258,0.00024299146,0.000041165295,0.000006800885,0.00008358186,0.000017066373,0.000087639244,0.9957184,0.00016629977,0.000078887475,0.0034504493],"study_design_scores_gemma":[0.000026622685,0.0001896897,0.0017689719,0.0000047086037,0.000024105395,0.00022655194,0.000020132304,0.002979796,0.99407613,0.00007375167,0.00060397806,0.0000055703686],"about_ca_topic_score_codex":0.00021074497,"about_ca_topic_score_gemma":0.0006108223,"teacher_disagreement_score":0.001936432,"about_ca_system_score_codex":0.00013159287,"about_ca_system_score_gemma":0.0000899698,"threshold_uncertainty_score":0.0064780116},"labels":[],"label_agreement":null},{"id":"W2796875013","doi":"10.1088/1361-6641/aabda2","title":"Mechanism of phosphorus passivation of near-interface oxide traps in 4H–SiC MOS devices investigated by CCDLTS and DFT calculation","year":2018,"lang":"en","type":"article","venue":"Semiconductor Science and Technology","topic":"Silicon Carbide Semiconductor Technologies","field":"Engineering","cited_by":11,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Simon Fraser University","funders":"Coherent / II-VI Foundation; University of Memphis","keywords":"Dielectric; Materials science; Passivation; Deep-level transient spectroscopy; Doping; Fermi level; Analytical Chemistry (journal); High-κ dielectric; Trapping; Optoelectronics; Silicon; Chemistry; Electron; Nanotechnology; Layer (electronics)","score_opus":0.010183400542858635,"score_gpt":0.23076346073898626,"score_spread":0.22058006019612764,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2796875013","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.96920043,0.00035257832,0.0153109,0.00018899408,0.000030893683,0.000069744725,0.00048815735,0.00018249529,0.0141758],"genre_scores_gemma":[0.997647,0.00009264383,0.0014112709,0.000021324546,0.000004117371,0.000042515265,0.00016510619,0.000013566163,0.0006023961],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9999037,0.000010971568,0.0000038575254,0.000007774162,0.000040057726,0.000033679913],"domain_scores_gemma":[0.99986887,0.000055241275,0.000021145337,0.0000150252945,0.000029614635,0.000010225861],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00019982856,0.0004935189,0.000505592,0.0006072909,0.00037718512,0.00036459652,0.00091011584,0.0006325144,0.0036452992],"category_scores_gemma":[0.000305632,0.00027675094,0.0006174945,0.00033910532,0.0004375381,0.0004487577,0.00026181538,0.00038318746,0.00017582889],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00026573936,0.00020235828,0.010112941,0.00071783544,0.00012804674,0.0012582741,0.0002820597,0.85820234,0.07123884,0.039997727,0.0018812652,0.015712574],"study_design_scores_gemma":[0.000019489038,0.000033928118,0.002279142,0.000018213974,0.000015277325,0.000035320125,0.000049841718,0.99024326,0.0057821986,0.0012484136,0.00026503438,0.000009830087],"about_ca_topic_score_codex":0.0063946256,"about_ca_topic_score_gemma":0.0058819912,"teacher_disagreement_score":0.0063946256,"about_ca_system_score_codex":0.0008135988,"about_ca_system_score_gemma":0.0005291349,"threshold_uncertainty_score":0.012714803},"labels":[],"label_agreement":null},{"id":"W2802656011","doi":"10.1088/1361-6641/aac161","title":"Electronic and transport properties of zigzag carbon nanotubes with the presence of periodical antidot and boron/nitride doping defects","year":2018,"lang":"en","type":"article","venue":"Semiconductor Science and Technology","topic":"Carbon Nanotubes in Composites","field":"Materials Science","cited_by":3,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Concordia University","funders":"","keywords":"Zigzag; Boron nitride; Doping; Carbon nanotube; Materials science; Nanotechnology; Boron; Nitride; Hexagonal boron nitride; Condensed matter physics; Chemical physics; Chemistry; Optoelectronics; Graphene; Physics; Organic chemistry","score_opus":0.007794292507386917,"score_gpt":0.21238367222455623,"score_spread":0.2045893797171693,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2802656011","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99904567,0.000067150824,0.00033528518,0.0000117328245,0.000005591941,0.0000018365866,0.000028632607,0.000009076978,0.00049492903],"genre_scores_gemma":[0.99944454,0.00003234994,0.00029987062,0.000002581686,0.0000011377723,0.000002193896,0.000029385712,0.0000018370309,0.00018594529],"study_design_codex":"bench_or_experimental","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9999502,0.0000059006247,0.0000027710983,0.000011435256,0.000018979397,0.000010826012],"domain_scores_gemma":[0.9998747,0.000032038286,0.00003502727,0.0000127637995,0.000027501977,0.000017844377],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000100911944,0.00015960437,0.00008115679,0.00016392265,0.00010782117,0.0001814252,0.00018425394,0.0002031585,0.00047562734],"category_scores_gemma":[0.00019277098,0.00007739398,0.000080760445,0.00012146067,0.00018097529,0.0001723098,0.00008159998,0.00008760201,0.00007802788],"study_design_candidate":"simulation_or_modeling","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00026573066,0.00005427488,0.002984323,0.00010166899,0.000028077797,0.00022162436,0.000054241144,0.012235496,0.9789766,0.002454369,0.00016128882,0.002462155],"study_design_scores_gemma":[0.000038703147,0.00073451514,0.015919909,0.000018428394,0.000051885054,0.00016864213,0.00013048056,0.26633635,0.71445394,0.0008291133,0.0012806349,0.000037443464],"about_ca_topic_score_codex":0.0006090196,"about_ca_topic_score_gemma":0.0007419438,"teacher_disagreement_score":0.0006090196,"about_ca_system_score_codex":0.0001813242,"about_ca_system_score_gemma":0.000090746995,"threshold_uncertainty_score":0.0015910864},"labels":[],"label_agreement":null},{"id":"W2808619522","doi":"10.1088/1361-6641/aacbe4","title":"<i>In situ</i> study of porous silicon thin films thermal oxidation by pulsed laser photoacoustics","year":2018,"lang":"en","type":"article","venue":"Semiconductor Science and Technology","topic":"Silicon Nanostructures and Photoluminescence","field":"Materials Science","cited_by":3,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"","funders":"Dirección General de Asuntos del Personal Académico, Universidad Nacional Autónoma de México; Canadian Institute for Theoretical Astrophysics","keywords":"In situ; Porous silicon; Materials science; Thin film; Silicon; Laser; Thermal oxidation; Porosity; Thermal; Chemical engineering; Optoelectronics; Nanotechnology; Chemistry; Optics; Composite material; Physics","score_opus":0.00811843587424078,"score_gpt":0.24432398361737934,"score_spread":0.23620554774313857,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2808619522","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99319845,0.00059260137,0.0045798975,0.000054445925,0.00001725933,0.000012816104,0.000117915515,0.000044657878,0.0013819162],"genre_scores_gemma":[0.9967182,0.0002933476,0.0021256201,0.000015605885,0.000008234538,0.000010403189,0.00006771695,0.000008979047,0.0007518824],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.999933,0.000008090875,0.0000028374297,0.000015375967,0.000025981846,0.0000146871935],"domain_scores_gemma":[0.99989235,0.000037147434,0.000032539912,0.0000075772123,0.000023688672,0.00000660134],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00012845008,0.00018604599,0.000118190495,0.0001576117,0.00014233234,0.00015135118,0.0002140818,0.00020977887,0.001084495],"category_scores_gemma":[0.0001782176,0.00014356332,0.00013697834,0.00013969041,0.0003076354,0.00021905763,0.00011964853,0.00030691328,0.00010873255],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00001352269,0.0000044757853,0.00008720008,0.000023822131,0.0000023945206,0.000023170685,0.000018419905,0.000057863967,0.9992642,0.000039040788,0.000018088182,0.0004477598],"study_design_scores_gemma":[0.0000016059299,0.000058924627,0.0010755587,0.0000021524502,0.0000035199378,0.000050771116,0.000022954893,0.00075873337,0.99763656,0.000021978602,0.00036473805,0.0000023318503],"about_ca_topic_score_codex":0.00065480836,"about_ca_topic_score_gemma":0.0005835273,"teacher_disagreement_score":0.001084495,"about_ca_system_score_codex":0.00014550654,"about_ca_system_score_gemma":0.00006825551,"threshold_uncertainty_score":0.0036280155},"labels":[],"label_agreement":null},{"id":"W2889766382","doi":"10.1088/1361-6641/aade69","title":"Highly boron-doped germanium layers on Si(001) grown by carbon-mediated epitaxy","year":2018,"lang":"en","type":"article","venue":"Semiconductor Science and Technology","topic":"Semiconductor materials and devices","field":"Engineering","cited_by":4,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"","funders":"Institute of Gender and Health; Deutsche Forschungsgemeinschaft","keywords":"Germanium; Epitaxy; Doping; Boron; Materials science; Carbon fibers; Chemistry; Optoelectronics; Silicon; Nanotechnology; Layer (electronics); Composite material; Organic chemistry","score_opus":0.007166165497057017,"score_gpt":0.21264677490983602,"score_spread":0.20548060941277901,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2889766382","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9953056,0.00037892943,0.0006732416,0.00006448687,0.000025264912,0.000014888696,0.0005638458,0.00007624818,0.0028975704],"genre_scores_gemma":[0.9933542,0.0004737877,0.0032046633,0.00002327955,0.0000059048207,0.000014251295,0.0006132821,0.000041081497,0.0022694436],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999044,0.0000060645025,0.0000043700556,0.000021341064,0.000030422647,0.000033437893],"domain_scores_gemma":[0.99991524,0.000025150124,0.000015603297,0.000010737465,0.000016956968,0.000016329828],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0000971872,0.0003030959,0.00019144517,0.00016572892,0.00023349356,0.0003564597,0.00031635817,0.00028652855,0.0020548012],"category_scores_gemma":[0.00017469119,0.00023980116,0.00013145217,0.00018900658,0.00019359951,0.00015943036,0.0001706904,0.00030810034,0.00049192534],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000039522834,0.0000041597336,0.00018056958,0.000045792935,0.0000050095396,0.00005270875,0.000019966797,0.0001527835,0.9988734,0.0001251091,0.0001367397,0.00036425042],"study_design_scores_gemma":[0.00001596033,0.00006259069,0.0037128348,0.000008735403,0.000008321336,0.000057844045,0.000027632734,0.001075092,0.9932974,0.00003330278,0.0016910483,0.000009247742],"about_ca_topic_score_codex":0.0043223007,"about_ca_topic_score_gemma":0.010912853,"teacher_disagreement_score":0.0043223007,"about_ca_system_score_codex":0.00055579346,"about_ca_system_score_gemma":0.00028138355,"threshold_uncertainty_score":0.0085942745},"labels":[],"label_agreement":null},{"id":"W2895927807","doi":"10.1088/1361-6641/aae810","title":"Contactless non-destructive imaging of doping density and electrical resistivity of semiconductor Si wafers using lock-in carrierography","year":2018,"lang":"en","type":"article","venue":"Semiconductor Science and Technology","topic":"Integrated Circuits and Semiconductor Failure Analysis","field":"Engineering","cited_by":12,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Toronto","funders":"Natural Sciences and Engineering Research Council of Canada; National Natural Science Foundation of China; Canada Research Chairs","keywords":"Wafer; Electrical resistivity and conductivity; Dopant; Materials science; Doping; Semiconductor; Optoelectronics; Silicon; Optics; Electrical engineering; Physics","score_opus":0.007095965585328293,"score_gpt":0.22717313299733416,"score_spread":0.22007716741200586,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2895927807","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.8159138,0.00037947,0.18059285,0.00010377991,0.000042106112,0.00005267884,0.00022097085,0.00058676495,0.0021075688],"genre_scores_gemma":[0.92796504,0.00016340725,0.06994381,0.000035173776,0.000016262691,0.000046783272,0.00009044048,0.000040126022,0.001698974],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998036,0.000028833108,0.000006688014,0.000050611354,0.00009565754,0.000014537795],"domain_scores_gemma":[0.99951506,0.00021460545,0.00007656256,0.00009335197,0.00007781453,0.00002251474],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00019345133,0.0002942914,0.00016490735,0.0004334761,0.00011451143,0.00030549508,0.00040055875,0.00030781847,0.001108735],"category_scores_gemma":[0.000635597,0.00017852732,0.000091896836,0.00017314845,0.00040782493,0.0003964794,0.0003242151,0.00029442107,0.00020866153],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000024437712,0.000009610159,0.00040035957,0.000018612644,0.0000025372226,0.00002405267,0.000027370244,0.00015655663,0.9937302,0.0001980753,0.000045928904,0.005362441],"study_design_scores_gemma":[0.000010605426,0.000112076894,0.0042329542,0.000004417387,0.000007887124,0.00022125801,0.000040030525,0.013087813,0.98141015,0.00019409525,0.0006643643,0.000014341492],"about_ca_topic_score_codex":0.0003744094,"about_ca_topic_score_gemma":0.0007808205,"teacher_disagreement_score":0.001108735,"about_ca_system_score_codex":0.00020097273,"about_ca_system_score_gemma":0.0001541839,"threshold_uncertainty_score":0.0037090778},"labels":[],"label_agreement":null},{"id":"W2906349515","doi":"10.1088/1361-6641/ab516a","title":"Few-electrode design for silicon MOS quantum dots","year":2019,"lang":"en","type":"article","venue":"Semiconductor Science and Technology","topic":"Quantum and electron transport phenomena","field":"Physics and Astronomy","cited_by":3,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"Waterloo Institute for Nanotechnology, University of Waterloo; Natural Sciences and Engineering Research Council of Canada; Canada First Research Excellence Fund; University of Waterloo","keywords":"Quantum dot; Qubit; Fabrication; Electrode; Scalability; Silicon; Electron; Quantum computer","score_opus":0.011572153595467248,"score_gpt":0.23839979736612388,"score_spread":0.22682764377065662,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2906349515","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9397881,0.0011352878,0.049885638,0.00037194937,0.0002118766,0.00011389961,0.00048410057,0.0003262714,0.0076828455],"genre_scores_gemma":[0.9648109,0.000261959,0.032215334,0.000058735608,0.000017454933,0.00008130007,0.000120833894,0.000036606605,0.0023968448],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99991226,0.00000786842,0.000006533659,0.0000310596,0.000032663684,0.000009632861],"domain_scores_gemma":[0.99982834,0.000027758162,0.00004287382,0.00002658217,0.000048642858,0.000025777792],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00007882044,0.00020874511,0.00023396645,0.00015292734,0.00018490125,0.0005014211,0.0005062992,0.00041673717,0.0012238398],"category_scores_gemma":[0.00022589958,0.00015871777,0.00012493909,0.00014099463,0.00013836738,0.00036063214,0.00020775964,0.00018714015,0.00038436646],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000054429383,0.00005086132,0.00034739144,0.00009675393,0.000013042997,0.000090537906,0.000019267587,0.00228162,0.98977965,0.002763393,0.0002436029,0.0042595044],"study_design_scores_gemma":[0.000059628153,0.00068372395,0.0013811933,0.000019206223,0.000028808978,0.00024598435,0.000027193639,0.07835416,0.90614885,0.0013761655,0.011644748,0.000030328567],"about_ca_topic_score_codex":0.00031861648,"about_ca_topic_score_gemma":0.0008424051,"teacher_disagreement_score":0.0012238398,"about_ca_system_score_codex":0.00047564998,"about_ca_system_score_gemma":0.00017323365,"threshold_uncertainty_score":0.004094124},"labels":[],"label_agreement":null},{"id":"W2908174139","doi":"10.1088/1361-6641/ab9846","title":"Decoupling the effects of composition and strain on the vibrational modes of GeSn semiconductors","year":2020,"lang":"en","type":"article","venue":"Semiconductor Science and Technology","topic":"Photonic and Optical Devices","field":"Engineering","cited_by":33,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Polytechnique Montréal","funders":"Natural Sciences and Engineering Research Council of Canada; Canada Research Chairs; Canada Foundation for Innovation","keywords":"Raman spectroscopy; Semiconductor; Raman scattering; Materials science; Asymmetry; Molecular vibration; Decoupling (probability); Strain (injury); Condensed matter physics; Lattice (music); Analytical Chemistry (journal); Chemistry; Optoelectronics; Optics; Physics","score_opus":0.010495537081736804,"score_gpt":0.2111332030623208,"score_spread":0.200637665980584,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2908174139","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9983095,0.0002080675,0.00079596177,0.000015379297,0.000004206861,0.0000019275387,0.00004092039,0.000009801638,0.0006143555],"genre_scores_gemma":[0.9985494,0.00020459299,0.0007229032,0.000007936608,0.0000018173132,0.0000039635065,0.00009022457,0.000012211138,0.0004070331],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99991214,0.000010772335,0.000005241677,0.000018428653,0.00003821314,0.0000151183685],"domain_scores_gemma":[0.9999106,0.000029857772,0.000019582625,0.000007664163,0.000025237996,0.000007017514],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00010832728,0.00026971434,0.0001714716,0.00026330005,0.00015621858,0.00018162977,0.00016011942,0.00014150266,0.000742522],"category_scores_gemma":[0.0002780063,0.00019745406,0.00012208446,0.00017817937,0.00031920572,0.0002291621,0.00016541396,0.00014539447,0.00012570401],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00004429247,0.0000048794695,0.0009341233,0.000023650466,0.0000057242096,0.000034806526,0.000028547665,0.0006979646,0.99682033,0.00009272,0.000008460641,0.0013044858],"study_design_scores_gemma":[0.0000029430005,0.00006408923,0.009669313,0.000006921162,0.000012524672,0.000059090835,0.000057940455,0.008032108,0.98163074,0.000062159255,0.00039284214,0.00000939824],"about_ca_topic_score_codex":0.0013747612,"about_ca_topic_score_gemma":0.0026040955,"teacher_disagreement_score":0.0013747612,"about_ca_system_score_codex":0.0002152815,"about_ca_system_score_gemma":0.00012650872,"threshold_uncertainty_score":0.0027335286},"labels":[],"label_agreement":null},{"id":"W2912786494","doi":"10.1088/1361-6641/ab0476","title":"InSb nanowires for multispectral infrared detection","year":2019,"lang":"en","type":"article","venue":"Semiconductor Science and Technology","topic":"Advanced Semiconductor Detectors and Materials","field":"Engineering","cited_by":13,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McMaster University","funders":"Natural Sciences and Engineering Research Council of Canada; University of Waterloo; University of Toronto; McMaster University; Ryerson University","keywords":"Multispectral image; Infrared; Nanowire; Remote sensing; Optics; Optoelectronics; Materials science; Nanotechnology; Physics; Geology","score_opus":0.007069551326838224,"score_gpt":0.22180516159380692,"score_spread":0.2147356102669687,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2912786494","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.96376824,0.0027655507,0.028553749,0.0001765654,0.00006527135,0.000032640983,0.00029970007,0.0003793919,0.0039588283],"genre_scores_gemma":[0.96845055,0.0008026454,0.027168164,0.00003599185,0.000010845545,0.000023693321,0.00015376593,0.000033078224,0.00332129],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99991536,0.0000107581,0.0000036487336,0.000021392365,0.00003755852,0.000011202742],"domain_scores_gemma":[0.99994874,0.000011922927,0.000012855625,0.000006445765,0.0000125896495,0.0000073439187],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00010673366,0.00026365602,0.00015393858,0.00011504806,0.00010132115,0.00020818003,0.00019713727,0.00021283052,0.0007343098],"category_scores_gemma":[0.00009525273,0.0002436446,0.000092180315,0.00008520038,0.00007783851,0.00015199679,0.0001266253,0.0002081711,0.00036402658],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00000852853,0.0000031953998,0.00004411917,0.000008124394,7.7085184e-7,0.000007048855,0.0000027392764,0.000022109427,0.9991448,0.000025701593,0.000023201768,0.00070964417],"study_design_scores_gemma":[0.0000031206637,0.00003622632,0.0004785479,0.0000013929613,0.0000027936499,0.000039926366,0.0000041770845,0.001247235,0.9972579,0.000018200823,0.0009087645,0.0000018375623],"about_ca_topic_score_codex":0.0002909087,"about_ca_topic_score_gemma":0.0008758707,"teacher_disagreement_score":0.0007343098,"about_ca_system_score_codex":0.00013514062,"about_ca_system_score_gemma":0.000067237765,"threshold_uncertainty_score":0.0024564862},"labels":[],"label_agreement":null},{"id":"W2938207366","doi":"10.1088/1361-6641/ab0efc","title":"Effects of uniaxial strain on the performance of armchair graphene nanoribbon resonant tunneling diode","year":2019,"lang":"en","type":"article","venue":"Semiconductor Science and Technology","topic":"Graphene research and applications","field":"Materials Science","cited_by":13,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Concordia University","funders":"","keywords":"Tensile strain; Materials science; Ultimate tensile strength; Resonant-tunneling diode; Strain (injury); Quantum tunnelling; Graphene; Uniaxial tension; Diode; Condensed matter physics; Hamiltonian (control theory); Optoelectronics; Nanotechnology; Composite material; Optics; Physics","score_opus":0.00811877563085849,"score_gpt":0.23222505981431438,"score_spread":0.22410628418345588,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2938207366","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9988103,0.00018207186,0.00021319391,0.000025081157,0.000012181292,0.0000014315114,0.000048447844,0.000023420163,0.00068392366],"genre_scores_gemma":[0.9995127,0.00007921187,0.00011058479,0.000005384891,0.0000022867416,0.0000017953738,0.000027886686,0.000005254074,0.00025495858],"study_design_codex":"bench_or_experimental","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9998423,0.000014794636,0.000015672276,0.000029079807,0.000053090225,0.000045119825],"domain_scores_gemma":[0.9997216,0.00007867509,0.00008466742,0.000034107874,0.000052978266,0.00002801103],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00018056919,0.00027409222,0.0001972751,0.00015137123,0.00016877244,0.00025807408,0.0002638655,0.00025215597,0.0012080312],"category_scores_gemma":[0.00036291548,0.00009981118,0.00011490312,0.00020995135,0.00016888739,0.00024881036,0.00017407647,0.00017193839,0.00020352784],"study_design_candidate":"simulation_or_modeling","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00030483058,0.00003306635,0.00088059413,0.00006017252,0.000012202145,0.00013906418,0.000037929596,0.001078027,0.99451846,0.00010182609,0.00008900838,0.002744924],"study_design_scores_gemma":[0.000006430095,0.00023270123,0.0033988466,0.0000062268905,0.000014874148,0.00005020475,0.00004674522,0.006527095,0.98944926,0.000019703299,0.00023827479,0.000009666922],"about_ca_topic_score_codex":0.0006751186,"about_ca_topic_score_gemma":0.00091120007,"teacher_disagreement_score":0.0012080312,"about_ca_system_score_codex":0.00018309892,"about_ca_system_score_gemma":0.000069610665,"threshold_uncertainty_score":0.004041314},"labels":[],"label_agreement":null},{"id":"W2939400816","doi":"10.1088/1361-6641/ab171c","title":"Crystal quality of SiGe films fabricated by the condensation technique and characterized by medium energy ion scattering","year":2019,"lang":"en","type":"article","venue":"Semiconductor Science and Technology","topic":"Semiconductor materials and devices","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"","funders":"Indigenous and Northern Affairs Canada","keywords":"Materials science; Crystal (programming language); Scattering; Oxide; Crystallography; Optoelectronics; Optics; Chemistry; Metallurgy; Physics","score_opus":0.009698659212860998,"score_gpt":0.22644878074973027,"score_spread":0.21675012153686926,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2939400816","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9982236,0.00031598227,0.0006328569,0.000012894172,0.000006708939,0.000007853319,0.00017281984,0.000017253897,0.00060996873],"genre_scores_gemma":[0.99795216,0.00018411089,0.00086327415,0.000007782897,0.0000030774017,0.000009701336,0.00020169704,0.00001697537,0.00076125906],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998832,0.00000824761,0.0000059279505,0.00002249684,0.000054092536,0.000025989772],"domain_scores_gemma":[0.99971026,0.00008001312,0.00007906133,0.000018296618,0.00008564635,0.00002666121],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00011521527,0.00018374673,0.00014365054,0.00025319355,0.00016836128,0.00027296174,0.000112454676,0.00018067304,0.00094342686],"category_scores_gemma":[0.0002987965,0.00014234103,0.00010887189,0.00023924666,0.00020058277,0.00014732651,0.0001087281,0.00023172663,0.00011418976],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000028482336,0.000003945124,0.0003611766,0.0000091640395,0.000003167687,0.000018200537,0.000022905653,0.000045140336,0.9991794,0.000013786102,0.000010998746,0.0003035877],"study_design_scores_gemma":[0.0000052965775,0.0001106457,0.009977186,0.0000033352985,0.000010562917,0.000041885058,0.000031690186,0.00057656143,0.98898447,0.0000060178563,0.00024783472,0.0000044327635],"about_ca_topic_score_codex":0.0026866728,"about_ca_topic_score_gemma":0.0036942237,"teacher_disagreement_score":0.0026866728,"about_ca_system_score_codex":0.00023543731,"about_ca_system_score_gemma":0.00013557197,"threshold_uncertainty_score":0.0053420663},"labels":[],"label_agreement":null},{"id":"W2944899906","doi":"10.1088/1361-6641/ab3c23","title":"Bismuth-surfactant-induced growth and structure of InAs/GaAs(110) quantum dots","year":2019,"lang":"en","type":"article","venue":"Semiconductor Science and Technology","topic":"Semiconductor Quantum Structures and Devices","field":"Physics and Astronomy","cited_by":7,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McMaster University","funders":"Alexander von Humboldt-Stiftung","keywords":"Quantum dot; Molecular beam epitaxy; Dislocation; Bismuth; Transmission electron microscopy; Materials science; Relaxation (psychology); Condensed matter physics; Stress relaxation; Planar; Layer (electronics); Epitaxy; Crystallography; Nanotechnology; Chemistry; Physics; Composite material","score_opus":0.006482851186419152,"score_gpt":0.23117482521968952,"score_spread":0.22469197403327038,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2944899906","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9988053,0.00012167233,0.00041854777,0.000015189685,0.000004038338,0.0000051962243,0.00006417022,0.000016720385,0.0005491901],"genre_scores_gemma":[0.9985677,0.000095824995,0.00076883193,0.00000903942,0.0000011709292,0.000007312266,0.000076743825,0.000009936101,0.0004634148],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999422,0.0000064125284,0.000003838389,0.000015136222,0.000018942792,0.000013446677],"domain_scores_gemma":[0.99994624,0.000009310878,0.000017620949,0.0000053229614,0.000011110564,0.000010451971],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00006429937,0.00017437832,0.00014624515,0.00009790726,0.00013648317,0.000275048,0.00018078712,0.00018064806,0.0005521565],"category_scores_gemma":[0.00012321833,0.00014881832,0.00011240139,0.000094778785,0.00012986094,0.00012717952,0.0001471983,0.00016337105,0.00014027665],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0000141476885,0.0000066355,0.00018206482,0.000013228675,0.0000020190057,0.000017078606,0.000019932555,0.00019572327,0.9992242,0.00009255025,0.000014052419,0.00021831469],"study_design_scores_gemma":[0.000008130594,0.000047500045,0.0033656133,0.0000046362215,0.000004525132,0.000027405344,0.000039230632,0.006125025,0.98980296,0.000043712374,0.000526308,0.0000048942534],"about_ca_topic_score_codex":0.0018683749,"about_ca_topic_score_gemma":0.0026706604,"teacher_disagreement_score":0.0018683749,"about_ca_system_score_codex":0.0003450709,"about_ca_system_score_gemma":0.00013253039,"threshold_uncertainty_score":0.0037149787},"labels":[],"label_agreement":null},{"id":"W2954629000","doi":"10.1088/1361-6641/ab276e","title":"Dual direction SCR with deep well structure for high voltage ESD in communication bus","year":2019,"lang":"en","type":"article","venue":"Semiconductor Science and Technology","topic":"Electrostatic Discharge in Electronics","field":"Engineering","cited_by":10,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Western University","funders":"Changsha Science and Technology Project; Hong Kong University of Science and Technology; National Natural Science Foundation of China","keywords":"Materials science; Optoelectronics; Voltage; Electrostatic discharge; Electrical engineering; Thermal conduction; Transmission line; Engineering; Composite material","score_opus":0.002573361660663345,"score_gpt":0.19394458210420268,"score_spread":0.19137122044353932,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2954629000","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9242985,0.0013349908,0.06257119,0.00024845442,0.0002334748,0.000054003638,0.00022858373,0.0011049145,0.0099258255],"genre_scores_gemma":[0.98993754,0.00012682786,0.008262107,0.000034693043,0.000014861165,0.000008028443,0.000052408974,0.000014229365,0.0015493919],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998925,0.0000089071245,0.000006843738,0.000022797736,0.000049769198,0.000019246141],"domain_scores_gemma":[0.99978596,0.000015993748,0.000043194614,0.000047117577,0.000087517285,0.000020299292],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000100288584,0.00019599007,0.00026040184,0.00018998624,0.00019741885,0.00034527772,0.00047993546,0.00037309286,0.001015347],"category_scores_gemma":[0.00017021403,0.00015594384,0.00022790136,0.00022902513,0.0001332156,0.00041320818,0.00021826162,0.00021702566,0.00044205645],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00015643302,0.00006142391,0.0012509993,0.00020644139,0.000032784108,0.00057115516,0.00005915756,0.003795049,0.97632617,0.0018853855,0.0010640381,0.0145909125],"study_design_scores_gemma":[0.00014888466,0.0021158324,0.0066438788,0.00003574643,0.00013135604,0.0025445658,0.00010842246,0.10310779,0.8725527,0.0016678387,0.01089808,0.000044970788],"about_ca_topic_score_codex":0.00036272043,"about_ca_topic_score_gemma":0.0008476974,"teacher_disagreement_score":0.001015347,"about_ca_system_score_codex":0.00024053095,"about_ca_system_score_gemma":0.00022816466,"threshold_uncertainty_score":0.0033966303},"labels":[],"label_agreement":null},{"id":"W2990568138","doi":"10.1088/1361-6641/ab5924","title":"Planar microwave resonator with electrodeposited ZnO thin film for ultraviolet detection","year":2019,"lang":"en","type":"article","venue":"Semiconductor Science and Technology","topic":"ZnO doping and properties","field":"Materials Science","cited_by":26,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"National Institute for Nanotechnology; University of British Columbia, Okanagan Campus; University of British Columbia; University of Alberta","funders":"","keywords":"Materials science; Optoelectronics; Microwave; Resonator; Ultraviolet; Planar; Dielectric; Thin film; Resonance (particle physics); Irradiation; Relative humidity; Analytical Chemistry (journal); Chemistry; Nanotechnology","score_opus":0.0073566301392004665,"score_gpt":0.20964182733646447,"score_spread":0.202285197197264,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2990568138","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.914028,0.0032154256,0.07943236,0.00013482213,0.00029326451,0.00010755724,0.0004778467,0.00070670247,0.0016041656],"genre_scores_gemma":[0.92663723,0.0010010573,0.07056909,0.00005909244,0.00003382679,0.00004863876,0.00018130841,0.00003987287,0.001429889],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.999713,0.000023403267,0.000012317751,0.000119479715,0.00010078275,0.000030942498],"domain_scores_gemma":[0.99981123,0.000059718983,0.00006525966,0.000018738547,0.000032787528,0.000012262978],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00016825265,0.00046973553,0.0004994865,0.00016048277,0.00008187715,0.0002750708,0.00076147093,0.0004024413,0.00076530286],"category_scores_gemma":[0.00031679854,0.00029325453,0.00030351666,0.0002010195,0.0001664357,0.0002795351,0.00021895404,0.00032628083,0.00038295356],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000010816756,0.0000025420784,0.000024532608,0.000020271926,0.000002038723,0.000013248241,0.0000023766177,0.000030743944,0.99937063,0.000014121197,0.00001045322,0.00049812894],"study_design_scores_gemma":[0.000009475606,0.00023135009,0.0008148177,0.0000023960024,0.000012745471,0.00010933,0.000008752411,0.0015573524,0.99659914,0.000016732867,0.0006305662,0.0000073757114],"about_ca_topic_score_codex":0.00031991955,"about_ca_topic_score_gemma":0.00052767526,"teacher_disagreement_score":0.00076530286,"about_ca_system_score_codex":0.00029013815,"about_ca_system_score_gemma":0.00011056552,"threshold_uncertainty_score":0.0025601387},"labels":[],"label_agreement":null},{"id":"W3003984044","doi":"10.1088/1361-6641/ab708e","title":"Carrier recombination dynamics in Ga <sub>0.51</sub> In <sub>0.49</sub> P double-heterostructures up to 500 K","year":2020,"lang":"en","type":"article","venue":"Semiconductor Science and Technology","topic":"Semiconductor Quantum Structures and Devices","field":"Physics and Astronomy","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"National Research Council Canada","funders":"FP7 Energy; European Commission","keywords":"Recombination; Dynamics (music); Chemistry; Physics","score_opus":0.01349780637469559,"score_gpt":0.25098060432571295,"score_spread":0.23748279795101737,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3003984044","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99902475,0.00010578039,0.00041629578,0.0000087993885,0.0000019151303,0.000002745307,0.00006833591,0.000033467662,0.00033803302],"genre_scores_gemma":[0.9993217,0.000040689767,0.00028123803,0.000002016772,5.9662364e-7,0.000003314334,0.00006658199,0.0000056483555,0.00027819994],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999405,0.0000033483889,0.0000025717095,0.000021741482,0.00001674086,0.000015058821],"domain_scores_gemma":[0.9998722,0.000034671968,0.000029294984,0.000013545714,0.000035718436,0.000014448425],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00009967051,0.00021208465,0.00020182594,0.00019942388,0.00019120165,0.00028926757,0.00029861965,0.0001641972,0.0009518435],"category_scores_gemma":[0.00018035239,0.00014120076,0.00013054966,0.00015909005,0.00016776245,0.00022943408,0.00013593299,0.00018133094,0.00021504331],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00010025008,0.000012234618,0.0020823493,0.000034623372,0.000014262174,0.000096901415,0.000103826394,0.0013401089,0.99426514,0.00015673491,0.000044569955,0.0017489512],"study_design_scores_gemma":[0.000012062075,0.00025029184,0.027494004,0.000013578812,0.000036133173,0.00014644601,0.0001434335,0.021167181,0.9498785,0.00013065412,0.00071064726,0.00001700023],"about_ca_topic_score_codex":0.0031445157,"about_ca_topic_score_gemma":0.0031141795,"teacher_disagreement_score":0.0031445157,"about_ca_system_score_codex":0.00061966997,"about_ca_system_score_gemma":0.00014382172,"threshold_uncertainty_score":0.006252408},"labels":[],"label_agreement":null},{"id":"W3004655901","doi":"10.1088/1361-6641/ab73ea","title":"Increasing threshold voltage and reducing leakage of AlGaN/GaN HEMTs using dual-layer SiN <i> <sub>x</sub> </i> stressors","year":2020,"lang":"en","type":"article","venue":"Semiconductor Science and Technology","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":12,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of British Columbia","funders":"Guangdong Science and Technology Department","keywords":"Materials science; Optoelectronics; Threshold voltage; Layer (electronics); Stress (linguistics); Voltage; Wide-bandgap semiconductor; Stressor; High-electron-mobility transistor; Electric field; Transistor; Electrical engineering; Nanotechnology; Physics","score_opus":0.02333224980514052,"score_gpt":0.2499692230656988,"score_spread":0.2266369732605583,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3004655901","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9984226,0.00016381146,0.00089381664,0.000024577357,0.000011348213,0.0000050204717,0.000030833144,0.00002507446,0.00042285625],"genre_scores_gemma":[0.9981128,0.00012253391,0.0012168009,0.000023286833,0.000006337142,0.0000059995423,0.000027848799,0.000008525337,0.00047576253],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999652,0.0000027962906,0.000002935433,0.0000073437527,0.000010542258,0.000011242281],"domain_scores_gemma":[0.99991596,0.000012156063,0.00002688951,0.000009836604,0.000019567051,0.000015528072],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000046201883,0.0002571231,0.00013473172,0.000084471154,0.000088553614,0.00021192941,0.00017078026,0.00015128395,0.0006445011],"category_scores_gemma":[0.000095560514,0.00010908128,0.00010290273,0.000078460034,0.00013003778,0.00020597166,0.00016310753,0.00015662801,0.0001096621],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000022046084,0.000004977421,0.00023244404,0.000014458381,0.0000029111252,0.000026867965,0.000009960773,0.00009264706,0.99888045,0.000026327594,0.000016153352,0.0006709203],"study_design_scores_gemma":[0.000008178585,0.0002385228,0.0031264538,0.0000027844153,0.000010083335,0.0000908237,0.000024831828,0.001397001,0.9947067,0.00003089752,0.00036097673,0.0000027705355],"about_ca_topic_score_codex":0.00021784622,"about_ca_topic_score_gemma":0.0004976933,"teacher_disagreement_score":0.0006445011,"about_ca_system_score_codex":0.00011859115,"about_ca_system_score_gemma":0.0000902649,"threshold_uncertainty_score":0.0021560788},"labels":[],"label_agreement":null},{"id":"W3008645591","doi":"10.1088/1361-6641/ab7844","title":"Surface recombination velocity on wet-cleaned silicon wafers using heterodyne lock-in ca rrierography imaging: measurement uniqueness investigation","year":2020,"lang":"en","type":"article","venue":"Semiconductor Science and Technology","topic":"Thermography and Photoacoustic Techniques","field":"Engineering","cited_by":7,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Toronto","funders":"National Natural Science Foundation of China; Canada Research Chairs","keywords":"Wafer; Heterodyne (poetry); Silicon; Materials science; Optics; Surface (topology); Optoelectronics; Semiconductor; Physics; Acoustics","score_opus":0.030487416314356024,"score_gpt":0.23020485323203618,"score_spread":0.19971743691768015,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3008645591","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9942162,0.00042296006,0.0047138147,0.000026122914,0.0000096143,0.000021979939,0.00007528097,0.000053558742,0.00046047993],"genre_scores_gemma":[0.9927851,0.00033918692,0.006044666,0.000014422628,0.000005380135,0.000018890474,0.00007544855,0.000015407972,0.0007015705],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.999843,0.000016172617,0.0000077222485,0.000035547488,0.00006083468,0.00003672969],"domain_scores_gemma":[0.99966824,0.00011041651,0.00008067781,0.00003356519,0.00008753602,0.000019501813],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00029811927,0.00028328772,0.00023546428,0.00031608986,0.00019213752,0.00029641713,0.00024192841,0.00030887206,0.0008007071],"category_scores_gemma":[0.00040251034,0.00017412295,0.00014565173,0.00025249107,0.00029593878,0.0002836112,0.00019276144,0.00024738073,0.00012866315],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000019714256,0.0000058159467,0.00023631638,0.000013883562,0.0000016899193,0.000019449175,0.000035908546,0.00005145943,0.9988029,0.000025505451,0.000011265028,0.0007761114],"study_design_scores_gemma":[0.0000025612999,0.00008377441,0.002925392,0.0000016558141,0.0000051707916,0.000040685776,0.000049603746,0.0014872556,0.9951857,0.0000072888697,0.00020568556,0.0000051397146],"about_ca_topic_score_codex":0.001648837,"about_ca_topic_score_gemma":0.0016784109,"teacher_disagreement_score":0.001648837,"about_ca_system_score_codex":0.0003079347,"about_ca_system_score_gemma":0.00019798626,"threshold_uncertainty_score":0.0032784939},"labels":[],"label_agreement":null},{"id":"W3015211849","doi":"10.1088/0268-1242/25/6/063001","title":"Dirac electronic states in graphene systems: optical spectroscopy studies","year":2010,"lang":"en","type":"article","venue":"Semiconductor Science and Technology","topic":"Graphene research and applications","field":"Materials Science","cited_by":171,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"","funders":"National Research Council Canada; Centre National de la Recherche Scientifique; Grantová Agentura České Republiky; European Commission","keywords":"Graphene; Dirac (video compression format); Massless particle; Spectroscopy; Graphite; Electronic structure","score_opus":0.013946232810804631,"score_gpt":0.31229498024630675,"score_spread":0.2983487474355021,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3015211849","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.5352246,0.29889035,0.04240195,0.0017988042,0.00044381764,0.000073015515,0.00017025563,0.00019589053,0.120801315],"genre_scores_gemma":[0.93412876,0.052726198,0.008622396,0.00035456114,0.00014491113,0.000026844365,0.00005693004,0.000009987307,0.0039294558],"study_design_codex":"theoretical_or_conceptual","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99994135,0.000011427361,0.0000023714276,0.00001053689,0.0000245366,0.000009705686],"domain_scores_gemma":[0.99995625,0.000020971915,0.00000591174,0.0000049463824,0.0000071180098,0.000004717981],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00015188291,0.00027941386,0.00016397642,0.0007549044,0.0003160299,0.00047303634,0.00033844583,0.00041823334,0.0007784164],"category_scores_gemma":[0.00019420075,0.00011798264,0.00008757329,0.00062990445,0.00067131047,0.0006606322,0.00050265645,0.0003591478,0.00013540259],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00017484448,0.00017442988,0.0012593769,0.0025217244,0.00004499039,0.000943343,0.0010386987,0.00959956,0.36084273,0.49192613,0.003030537,0.12844361],"study_design_scores_gemma":[0.00004830066,0.00053980615,0.009786331,0.0010524114,0.000077923985,0.0040402696,0.0012208034,0.0677608,0.32898164,0.37711927,0.20913672,0.0002356932],"about_ca_topic_score_codex":0.00023856696,"about_ca_topic_score_gemma":0.00024723617,"teacher_disagreement_score":0.0007784164,"about_ca_system_score_codex":0.00021994289,"about_ca_system_score_gemma":0.00011757371,"threshold_uncertainty_score":0.0026040077},"labels":[],"label_agreement":null},{"id":"W3036391688","doi":"10.1088/1361-6641/ab9ea8","title":"Experimental silicon tunnel-FET device model applied to design a Gm-C filter","year":2020,"lang":"en","type":"article","venue":"Semiconductor Science and Technology","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Toronto","funders":"","keywords":"Silicon; Filter (signal processing); Materials science; Optoelectronics; Engineering physics; Electronic engineering; Electrical engineering; Engineering","score_opus":0.04433464557719699,"score_gpt":0.25636077289245335,"score_spread":0.21202612731525636,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3036391688","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.7299612,0.0007372873,0.2465181,0.0003313649,0.00015381275,0.00028725306,0.0020026146,0.002239586,0.017768659],"genre_scores_gemma":[0.9831508,0.00018286763,0.014003223,0.000021727225,0.0000070791293,0.00009077667,0.00021743652,0.000036501435,0.002289679],"study_design_codex":"bench_or_experimental","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9998547,0.000021282285,0.0000074459463,0.000035727422,0.0000617778,0.000019118095],"domain_scores_gemma":[0.9998386,0.00008040235,0.000015818805,0.00002107508,0.00003967369,0.000004309856],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00025281723,0.0004702525,0.00034358993,0.0002015665,0.00025194374,0.0003497729,0.0009009615,0.00090251415,0.0040264996],"category_scores_gemma":[0.0003809711,0.00016921782,0.0004670713,0.0002387408,0.00022971073,0.00044725786,0.00013979408,0.0003190253,0.00061304314],"study_design_candidate":"simulation_or_modeling","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00047493275,0.000110795496,0.0010244983,0.00072511204,0.0000930515,0.00038822152,0.0002655922,0.1299653,0.8500165,0.0046390668,0.0009501899,0.0113467015],"study_design_scores_gemma":[0.00007202778,0.00078475976,0.0015117425,0.000048497008,0.00006519604,0.00014578403,0.00006134807,0.6918765,0.30001163,0.0008233299,0.004570791,0.000028376166],"about_ca_topic_score_codex":0.0039138193,"about_ca_topic_score_gemma":0.0035487772,"teacher_disagreement_score":0.0040264996,"about_ca_system_score_codex":0.00068128057,"about_ca_system_score_gemma":0.00040606878,"threshold_uncertainty_score":0.013469994},"labels":[],"label_agreement":null},{"id":"W3093072615","doi":"10.1088/1361-6641/abb8fc","title":"An optoelectronic notch (‘dip’) phenomenon in the heterodyne photocarrier radiometry frequency response of Si wafers: a route to quantitative trap-state dynamic processes in semiconductors","year":2020,"lang":"en","type":"article","venue":"Semiconductor Science and Technology","topic":"Silicon and Solar Cell Technologies","field":"Engineering","cited_by":4,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Toronto","funders":"","keywords":"Heterodyne (poetry); Semiconductor; Wafer; Chemistry; Optics; Condensed matter physics; Optoelectronics; Physics","score_opus":0.016184989315531882,"score_gpt":0.2692345940662233,"score_spread":0.25304960475069144,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3093072615","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.95124,0.00033454722,0.046178892,0.000066406734,0.000012712235,0.000039695344,0.00012091356,0.00015038467,0.0018563858],"genre_scores_gemma":[0.9899318,0.00007785668,0.009374058,0.000014824757,0.0000034492516,0.000016148388,0.000036068453,0.000009920064,0.0005358322],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999002,0.000018684786,0.0000040663367,0.000030054469,0.000035359666,0.000011520567],"domain_scores_gemma":[0.99959415,0.0002413447,0.00006562791,0.000045259443,0.000040340245,0.000013235718],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00030536434,0.00018806891,0.00010648613,0.00026854864,0.000061790386,0.00018484096,0.00020515258,0.00019023493,0.0010331785],"category_scores_gemma":[0.0006349494,0.0001247454,0.00008233118,0.00013387267,0.00029289158,0.00020058698,0.00012506449,0.00031775894,0.00013731194],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00005622239,0.000015066216,0.0009913296,0.000031919255,0.000003425378,0.000034059587,0.00004408849,0.00029338687,0.9923395,0.0005570396,0.000022609005,0.005611366],"study_design_scores_gemma":[0.0000085900765,0.00019640737,0.0068703867,0.0000052568953,0.0000046618306,0.00013418008,0.00003081004,0.012318724,0.97971296,0.0002456106,0.00046548116,0.000006881025],"about_ca_topic_score_codex":0.00023971043,"about_ca_topic_score_gemma":0.00018945655,"teacher_disagreement_score":0.0010331785,"about_ca_system_score_codex":0.00021684488,"about_ca_system_score_gemma":0.000090073925,"threshold_uncertainty_score":0.0034563541},"labels":[],"label_agreement":null},{"id":"W3105693365","doi":"10.1088/1361-6641/abcbd3","title":"Selective GaN sublimation and local area regrowth for co-integration of enhancement mode and depletion mode Al(Ga)N/GaN high electron mobility transistors","year":2020,"lang":"en","type":"article","venue":"Semiconductor Science and Technology","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":3,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Institut interdisciplinaire d'innovation technologique; Université de Sherbrooke","funders":"Agence Nationale de la Recherche","keywords":"Materials science; Sublimation (psychology); Optoelectronics; Transistor; Barrier layer; Reactive-ion etching; Heterojunction; Layer (electronics); Etching (microfabrication); Nanotechnology; Electrical engineering","score_opus":0.014539720563234474,"score_gpt":0.26848454657451815,"score_spread":0.25394482601128365,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3105693365","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9923413,0.00041778045,0.006285902,0.000026537879,0.000025828911,0.000018566681,0.00003383084,0.00008687422,0.0007634291],"genre_scores_gemma":[0.99467963,0.00009216686,0.0043179924,0.000012697725,0.0000067331976,0.000010832926,0.000026506767,0.00002052774,0.00083285273],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998646,0.000012574299,0.000006343459,0.000045644254,0.000041448737,0.000029331606],"domain_scores_gemma":[0.99986637,0.00002344667,0.00004013493,0.000030761043,0.000022113665,0.000017029388],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00013060754,0.0002337856,0.0002301852,0.00014071204,0.0001300782,0.00032369714,0.0005129307,0.00019914153,0.00036311342],"category_scores_gemma":[0.00017044676,0.00018972195,0.0001750385,0.00007533932,0.00018889505,0.00026107082,0.00030725086,0.00021902921,0.00013445936],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000014698093,0.000010105022,0.00014973553,0.00001395914,0.0000037979323,0.00003444511,0.000015545762,0.000095176685,0.9985911,0.00006442317,0.000018847186,0.0009881804],"study_design_scores_gemma":[0.0000065401046,0.00014083991,0.0014606125,0.0000014716126,0.000008884021,0.00013653353,0.000011766654,0.0017761054,0.9958467,0.000020178088,0.0005864369,0.0000039428915],"about_ca_topic_score_codex":0.00029778492,"about_ca_topic_score_gemma":0.00078889483,"teacher_disagreement_score":0.0005129307,"about_ca_system_score_codex":0.00016227899,"about_ca_system_score_gemma":0.00015129636,"threshold_uncertainty_score":0.0012147427},"labels":[],"label_agreement":null},{"id":"W3111465871","doi":"10.1088/1361-6641/abd489","title":"New barrier layer design for the fabrication of gallium nitride-metal-insulator-semiconductor-high electron mobility transistor normally-off transistor","year":2020,"lang":"en","type":"article","venue":"Semiconductor Science and Technology","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":3,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Institut interdisciplinaire d'innovation technologique; Université de Sherbrooke","funders":"Fonds de recherche du Québec – Nature et technologies; Natural Sciences and Engineering Research Council of Canada; Agence Nationale de la Recherche","keywords":"Materials science; Optoelectronics; Transistor; Barrier layer; Fabrication; Semiconductor; Layer (electronics); Analytical Chemistry (journal); Nanotechnology; Chemistry; Voltage; Electrical engineering","score_opus":0.021778510961860995,"score_gpt":0.2466978673388855,"score_spread":0.22491935637702448,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3111465871","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.8641006,0.0017218966,0.12683204,0.00019118177,0.00021854266,0.00013211138,0.00038183006,0.00051096163,0.005910903],"genre_scores_gemma":[0.909116,0.00059981743,0.086578436,0.00006167898,0.000029526605,0.00008972082,0.00031836866,0.00006977536,0.0031367894],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99991894,0.000005632028,0.0000054171464,0.000021587546,0.00003379784,0.0000146443845],"domain_scores_gemma":[0.9998994,0.00001525043,0.000024307725,0.00001847387,0.000027562864,0.000014970429],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00009753453,0.0002500034,0.00022680839,0.00017454018,0.000119489036,0.00032201502,0.0006398384,0.00032961243,0.00058133516],"category_scores_gemma":[0.00014986354,0.00019931459,0.00019182797,0.00009305316,0.00010510645,0.00027299923,0.00021508473,0.00032294905,0.00031552985],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0000133533595,0.0000077940285,0.00011297558,0.00004985246,0.000006451661,0.00004888776,0.000012473602,0.00013096414,0.9978004,0.00030760185,0.00006297069,0.0014462859],"study_design_scores_gemma":[0.000020212137,0.00019502077,0.0014871977,0.000008736899,0.000028208487,0.0004603052,0.000016876667,0.0050244,0.9869385,0.00017718477,0.005632003,0.000011272],"about_ca_topic_score_codex":0.00024482756,"about_ca_topic_score_gemma":0.00057046575,"teacher_disagreement_score":0.0006398384,"about_ca_system_score_codex":0.00023084608,"about_ca_system_score_gemma":0.00020383354,"threshold_uncertainty_score":0.0019447207},"labels":[],"label_agreement":null},{"id":"W3128696476","doi":"10.1088/1361-6641/abe42d","title":"Single-hole physics in GaAs/AlGaAs double quantum dot system with strong spin–orbit interaction","year":2021,"lang":"en","type":"article","venue":"Semiconductor Science and Technology","topic":"Quantum and electron transport phenomena","field":"Physics and Astronomy","cited_by":18,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"National Research Council Canada","funders":"","keywords":"Condensed matter physics; Physics; Quantum dot; Spin (aerodynamics); Quantum tunnelling; Spin polarization; Electron; Optoelectronics; Quantum mechanics","score_opus":0.02393782861340297,"score_gpt":0.25730902050029947,"score_spread":0.2333711918868965,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3128696476","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.997757,0.00012639475,0.0013423763,0.000045341487,0.000013527505,0.00000393906,0.000026330936,0.000022283142,0.0006628422],"genre_scores_gemma":[0.9991516,0.000039100247,0.0005901629,0.000008314237,0.0000019327297,0.0000029666958,0.000010265644,0.0000023424623,0.0001933386],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.999956,0.0000049116434,0.0000024349927,0.000013911141,0.000012870929,0.000009885355],"domain_scores_gemma":[0.99994063,0.000012027164,0.000012145378,0.000008870001,0.000010469192,0.000015784177],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000106914275,0.00014380267,0.00019422278,0.0001516119,0.00025967343,0.00033399573,0.00017706682,0.00021718732,0.00077468273],"category_scores_gemma":[0.00008305745,0.00009699731,0.00010686198,0.00010956561,0.00029666646,0.0002561212,0.0002186676,0.00015771482,0.00007897852],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00006063732,0.000024719693,0.00076151313,0.00007115446,0.000016109574,0.00035410712,0.00008598114,0.0010270854,0.9931589,0.0032617492,0.00011270997,0.0010653889],"study_design_scores_gemma":[0.0000873117,0.00051748013,0.011976595,0.000023811168,0.00007570458,0.000548523,0.00034319898,0.1819819,0.79726607,0.004149442,0.002977089,0.000052827134],"about_ca_topic_score_codex":0.0006994358,"about_ca_topic_score_gemma":0.00089791155,"teacher_disagreement_score":0.00077468273,"about_ca_system_score_codex":0.00019049812,"about_ca_system_score_gemma":0.000110889036,"threshold_uncertainty_score":0.0025915504},"labels":[],"label_agreement":null},{"id":"W3135122374","doi":"10.1088/1361-6641/abecab","title":"Normally-off AlGaN/GaN high electron mobility transistors on Si substrate with selective barrier regrowth in ohmic regions","year":2021,"lang":"en","type":"article","venue":"Semiconductor Science and Technology","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":8,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"National Research Council Canada","funders":"","keywords":"Ohmic contact; High-electron-mobility transistor; Optoelectronics; Materials science; Transistor; Fabrication; Barrier layer; Substrate (aquarium); Threshold voltage; Layer (electronics); Voltage; Nanotechnology; Electrical engineering","score_opus":0.007130852003325724,"score_gpt":0.22333505351829946,"score_spread":0.21620420151497374,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3135122374","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9965971,0.00023810347,0.0022785119,0.00002322408,0.00001728984,0.000008262232,0.000052258816,0.000045515102,0.000739618],"genre_scores_gemma":[0.9955739,0.0001309918,0.0033273953,0.000015011117,0.000006421966,0.000008780676,0.00005814023,0.000010391215,0.00086896704],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999249,0.0000065716868,0.000004702937,0.000019229503,0.000027997577,0.00001660918],"domain_scores_gemma":[0.99989927,0.000019584271,0.000025928892,0.00002247863,0.000017290493,0.000015384805],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000088657456,0.00019450391,0.00017688675,0.000090367554,0.000085254425,0.00021559001,0.0003924142,0.00017756135,0.0003782636],"category_scores_gemma":[0.000120378776,0.00015544161,0.00015859432,0.00007509158,0.00016296342,0.00020670157,0.00014183714,0.00020308241,0.00015775724],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000011793693,0.000004779204,0.00015812356,0.000012854685,0.0000040950226,0.000058942434,0.000013446912,0.00008115467,0.99906737,0.00005928129,0.000019189425,0.00050903123],"study_design_scores_gemma":[0.000009738185,0.00015437155,0.0029046205,0.0000027358296,0.000013093156,0.0002422413,0.00002034676,0.0018480745,0.9941186,0.00005395462,0.00062764215,0.000004728749],"about_ca_topic_score_codex":0.00031143424,"about_ca_topic_score_gemma":0.0007095098,"teacher_disagreement_score":0.0003924142,"about_ca_system_score_codex":0.00014920096,"about_ca_system_score_gemma":0.00011526703,"threshold_uncertainty_score":0.001265347},"labels":[],"label_agreement":null},{"id":"W3190058841","doi":"10.1088/1361-6641/ac1963","title":"A dual-gate and Γ-type field plate GaN base E-HEMT with high breakdown voltage on simulation investigation","year":2021,"lang":"en","type":"article","venue":"Semiconductor Science and Technology","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":10,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Institute of Aging","funders":"","keywords":"High-electron-mobility transistor; Optoelectronics; Breakdown voltage; Materials science; Dual (grammatical number); Voltage; Electrical engineering; Transistor; Engineering","score_opus":0.012446703050460726,"score_gpt":0.24044458365385657,"score_spread":0.22799788060339585,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3190058841","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.96750957,0.00025460107,0.015387548,0.0001617192,0.000029914816,0.000025704407,0.0002815061,0.00028506518,0.016064413],"genre_scores_gemma":[0.9961022,0.000077858,0.002533817,0.000013654284,0.0000036661654,0.00001108617,0.00008250206,0.000019974852,0.0011552738],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99995255,0.000007908233,0.0000012869173,0.00000620548,0.000019429417,0.000012618246],"domain_scores_gemma":[0.999879,0.000055761924,0.000010224688,0.000009879241,0.00003738584,0.000007673896],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00009938038,0.00025563984,0.00026316557,0.00022333309,0.00021031642,0.00026789217,0.00038250734,0.00044996888,0.0015091756],"category_scores_gemma":[0.00026443895,0.00013486797,0.00040095986,0.00022776105,0.00017788484,0.00029797154,0.00011217749,0.00019930281,0.0001262016],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00019650631,0.00010142876,0.0043791407,0.00023700204,0.00007344039,0.0008173245,0.00009963348,0.937673,0.04308233,0.0036326486,0.001229558,0.00847799],"study_design_scores_gemma":[0.00001979051,0.000086140615,0.0012346483,0.0000064812807,0.000013169588,0.0000555866,0.00002701559,0.9910982,0.0066533717,0.0003666932,0.0004330462,0.0000058334444],"about_ca_topic_score_codex":0.0033946324,"about_ca_topic_score_gemma":0.002202809,"teacher_disagreement_score":0.0033946324,"about_ca_system_score_codex":0.0003102746,"about_ca_system_score_gemma":0.00024943126,"threshold_uncertainty_score":0.006749749},"labels":[],"label_agreement":null},{"id":"W4233420504","doi":"10.1088/0268-1242/29/5/050301","title":"Nanocontacts","year":2014,"lang":"en","type":"article","venue":"Semiconductor Science and Technology","topic":"Surface and Thin Film Phenomena","field":"Physics and Astronomy","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Simon Fraser University","funders":"","keywords":"Nanowire; Nanotechnology; Semiconductor; Materials science; Semiconductor nanostructures; Nanostructure; Planar; Quantum dot; Optoelectronics; Quantum well; Engineering physics; Physics; Optics; Computer science","score_opus":0.005333122857912219,"score_gpt":0.2181753075218298,"score_spread":0.21284218466391758,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4233420504","genre_codex":"other","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.057504833,0.018012486,0.04999462,0.003861747,0.0077901147,0.00037659542,0.0039094035,0.004283056,0.85426706],"genre_scores_gemma":[0.4094816,0.011764996,0.06008631,0.0046051377,0.0006749881,0.0007914533,0.0062845377,0.0011862023,0.50512475],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9991516,0.000039083992,0.00003747386,0.00019829306,0.00049353234,0.000079933096],"domain_scores_gemma":[0.9994287,0.000055596767,0.00004724925,0.00012511564,0.00025277186,0.00009049049],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00022960805,0.00055330654,0.000413961,0.000657691,0.0015509512,0.0021252534,0.0011687073,0.0009165137,0.0420105],"category_scores_gemma":[0.00087691325,0.0002708234,0.00034740544,0.0006602348,0.0004959917,0.001064887,0.0016407806,0.0010067525,0.01886053],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0004920514,0.00014735051,0.0012186394,0.001109742,0.00008771058,0.0011296,0.00064718176,0.0020552848,0.4164674,0.21256582,0.15046392,0.21361527],"study_design_scores_gemma":[0.00002579441,0.00006466687,0.00048691512,0.00006849465,0.000027445883,0.0003952296,0.00015133753,0.0020954015,0.14051154,0.00794353,0.8482017,0.0000278452],"about_ca_topic_score_codex":0.003055663,"about_ca_topic_score_gemma":0.0056833923,"teacher_disagreement_score":0.0420105,"about_ca_system_score_codex":0.0014873028,"about_ca_system_score_gemma":0.0009339721,"threshold_uncertainty_score":0.14053917},"labels":[],"label_agreement":null},{"id":"W4280595098","doi":"10.1088/1361-6641/ac7070","title":"Chemical imaging of oxide confinement layers in <mml:math xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"> <mml:mrow> <mml:mtext>GaAs</mml:mtext> </mml:mrow> <mml:mrow> <mml:mo>/</mml:mo> </mml:mrow> <mml:msub> <mml:mrow> <mml:mtext>Al</mml:mtext> </mml:mrow> <mml:mrow> <mml:mi>x</mml:mi> </mml:mrow> </mml:msub> <mml:msub> <mml:mrow> <mml:mtext>Ga</mml:mtext> </mml:mrow> <mml:mrow> <mml:mn>1</mml:mn> <mml:mo>−</mml:mo> <mml:mi>x</mml:mi> </mml:mrow> </mml:msub> <mml:mrow> <mml:mtext>As</mml:mtext> </mml:mrow> </mml:math> VCSELs","year":2022,"lang":"lv","type":"article","venue":"Semiconductor Science and Technology","topic":"Semiconductor Lasers and Optical Devices","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McMaster University","funders":"Natural Sciences and Engineering Research Council of Canada; Centre National de la Recherche Scientifique; McMaster University","keywords":"Materials science; Analytical Chemistry (journal); Chemistry","score_opus":0.014563027975111636,"score_gpt":0.2359399732456191,"score_spread":0.22137694527050747,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4280595098","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.82938695,0.0024594562,0.029842446,0.0022600847,0.0004287368,0.000066875225,0.0054725204,0.0019810386,0.12810184],"genre_scores_gemma":[0.88431513,0.0017277279,0.02818095,0.0005513886,0.000052777366,0.0000856052,0.0025961697,0.00072434987,0.08176576],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999558,0.000002759802,0.0000015302244,0.000010616971,0.000017823815,0.000011453263],"domain_scores_gemma":[0.9999442,0.0000175566,0.0000135312475,0.000005405672,0.000012074003,0.0000072495827],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000076390475,0.00022339124,0.00009245163,0.0002785988,0.00026215357,0.0005033984,0.00036058848,0.0004294798,0.014777561],"category_scores_gemma":[0.0001381584,0.00019955724,0.00011290456,0.00021905072,0.00016272136,0.00042158357,0.00019279247,0.00044217292,0.0016366863],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000070023525,0.000017008126,0.00025524,0.00009442621,0.000004573573,0.00016694189,0.0000663683,0.00040354094,0.9862178,0.003114832,0.0050134156,0.0045757233],"study_design_scores_gemma":[0.000022420298,0.000065984146,0.003084444,0.000024690498,0.0000080467435,0.00019528784,0.00010373588,0.004846333,0.96323884,0.00051128445,0.027884984,0.000013952514],"about_ca_topic_score_codex":0.0029043106,"about_ca_topic_score_gemma":0.0054007107,"teacher_disagreement_score":0.014777561,"about_ca_system_score_codex":0.00060617825,"about_ca_system_score_gemma":0.00024529628,"threshold_uncertainty_score":0.049435914},"labels":[],"label_agreement":null},{"id":"W4283756746","doi":"10.1088/1361-6641/ac7d71","title":"Physical mechanisms of the influence of <i>γ</i>-ray surface treatment on the characteristics of close AuNi/n–n<sup>+</sup>-GaN Schottky contacts","year":2022,"lang":"en","type":"article","venue":"Semiconductor Science and Technology","topic":"Semiconductor materials and interfaces","field":"Physics and Astronomy","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":true,"ca_institutions":"","funders":"","keywords":"Schottky barrier; Schottky diode; Irradiation; Equivalent series resistance; Contact resistance; Homogeneity (statistics); Semiconductor; Materials science; Condensed matter physics; Conductivity; Metal; Chemistry; Optoelectronics; Nanotechnology; Voltage; Layer (electronics); Physics; Metallurgy","score_opus":0.01040405462708247,"score_gpt":0.23277493767491256,"score_spread":0.2223708830478301,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4283756746","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9964045,0.00054992497,0.0015982764,0.000031571144,0.0000104516475,0.000021225966,0.00009996795,0.00005615448,0.0012279844],"genre_scores_gemma":[0.9993955,0.000085581014,0.00018617287,0.0000116993615,0.0000018986688,0.0000065135637,0.000039746825,0.000010035274,0.00026292843],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998179,0.000030732812,0.000011730343,0.000042902328,0.000060041973,0.000036707926],"domain_scores_gemma":[0.99965715,0.00012520966,0.00009391526,0.000052910123,0.000046980316,0.000023904931],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00018363725,0.00025629118,0.00035282454,0.00023957672,0.00020163666,0.00041218527,0.0003306753,0.0003133609,0.0019046937],"category_scores_gemma":[0.00045903804,0.00020443906,0.00025991595,0.00018371151,0.00056955277,0.00023761534,0.000251018,0.00036773048,0.00024281925],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00014147097,0.000010227258,0.00097746,0.000059887556,0.000016534072,0.00011336949,0.00012679996,0.00051623717,0.9968671,0.00010449028,0.000028109127,0.0010382927],"study_design_scores_gemma":[0.0000069841594,0.00022141564,0.018444123,0.0000069975,0.000024297131,0.00025077743,0.00012460892,0.0012042816,0.97911674,0.000062771716,0.0005302092,0.0000068153226],"about_ca_topic_score_codex":0.00050359714,"about_ca_topic_score_gemma":0.0004143323,"teacher_disagreement_score":0.0019046937,"about_ca_system_score_codex":0.0003130632,"about_ca_system_score_gemma":0.00007912755,"threshold_uncertainty_score":0.0063718557},"labels":[],"label_agreement":null},{"id":"W4323655652","doi":"10.1088/1361-6641/acc2df","title":"Enhanced resistive switching performance of TiO<sub>2</sub> based RRAM device with graphene oxide inserting layer","year":2023,"lang":"en","type":"article","venue":"Semiconductor Science and Technology","topic":"Advanced Memory and Neural Computing","field":"Engineering","cited_by":7,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"National Natural Science Foundation of China","keywords":"Materials science; Graphene; Resistive random-access memory; Raman spectroscopy; Ohmic contact; Oxide; Optoelectronics; Transmission electron microscopy; Substrate (aquarium); Thin film; Heterojunction; Nanotechnology; Analytical Chemistry (journal); Layer (electronics); Voltage; Electrical engineering; Chemistry; Optics; Metallurgy","score_opus":0.01399905028201798,"score_gpt":0.22785602635353208,"score_spread":0.2138569760715141,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4323655652","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99729615,0.00034390518,0.0010652584,0.00004955705,0.00004226233,0.0000053418757,0.00008284843,0.00013516455,0.0009796662],"genre_scores_gemma":[0.9978787,0.00014380856,0.0012056674,0.0000340278,0.000010644483,0.0000043522023,0.000039787228,0.000007863749,0.0006751375],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999404,0.0000050923873,0.0000040146765,0.000012184866,0.000017221413,0.000021096072],"domain_scores_gemma":[0.99991417,0.000019665003,0.000017667346,0.000014239147,0.000023042347,0.000011282929],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000064938,0.00020633255,0.00024093168,0.0001883422,0.00010755234,0.00030956307,0.0003927261,0.00033309232,0.0008838919],"category_scores_gemma":[0.00017239542,0.00009034249,0.00016211596,0.00022464759,0.0001288736,0.00033848858,0.00014838346,0.00018698463,0.00021293324],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00005069318,0.0000122746205,0.00013055137,0.00003356672,0.000006410312,0.00012203497,0.000018945748,0.00009472892,0.9977756,0.00007225383,0.0000661177,0.0016168016],"study_design_scores_gemma":[0.000016468775,0.00024124993,0.0025041779,0.0000064965193,0.00003159131,0.00021592488,0.000038198446,0.0056248438,0.9904033,0.000068370304,0.00083720614,0.000012135382],"about_ca_topic_score_codex":0.00031054742,"about_ca_topic_score_gemma":0.0006817754,"teacher_disagreement_score":0.0008838919,"about_ca_system_score_codex":0.00015421979,"about_ca_system_score_gemma":0.000058890222,"threshold_uncertainty_score":0.0029568672},"labels":[],"label_agreement":null},{"id":"W4384942754","doi":"10.1088/1361-6641/ace990","title":"Bismuth surfactant-enhanced III-As epitaxy on GaAs(111)A","year":2023,"lang":"en","type":"article","venue":"Semiconductor Science and Technology","topic":"Semiconductor Quantum Structures and Devices","field":"Physics and Astronomy","cited_by":9,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McMaster University","funders":"Natural Sciences and Engineering Research Council of Canada; Alexander von Humboldt-Stiftung","keywords":"Epitaxy; Bismuth; Materials science; Molecular beam epitaxy; Surface roughness; Quantum dot; Deposition (geology); Crystallography; Analytical Chemistry (journal); Chemistry; Nanotechnology; Layer (electronics); Geology; Metallurgy","score_opus":0.0117607006698114,"score_gpt":0.27421259419754845,"score_spread":0.26245189352773707,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4384942754","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99884546,0.00014961633,0.00016668605,0.000023150023,0.000005576219,0.000003970304,0.00007967256,0.000013551202,0.0007123423],"genre_scores_gemma":[0.99783945,0.00022021671,0.00067945884,0.000011430136,0.0000014911922,0.000007537514,0.00007079506,0.000009100167,0.0011605402],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999455,0.0000048615047,0.0000032936903,0.0000112877715,0.000018889943,0.00001620205],"domain_scores_gemma":[0.99996006,0.0000082389915,0.000013056962,0.000003797025,0.000008072065,0.0000066259763],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000053127493,0.00018433247,0.00017347267,0.00008294901,0.000134057,0.00025918247,0.0001758356,0.00020406903,0.0009701521],"category_scores_gemma":[0.00008570461,0.00013895906,0.000093882416,0.0001750088,0.000079044374,0.0001079544,0.00012376907,0.00017143074,0.00022322494],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000037621747,0.000006506356,0.00013375428,0.000019893278,0.000002833358,0.000037370144,0.000015788077,0.00014388573,0.9992144,0.00006403606,0.00003212856,0.00029170132],"study_design_scores_gemma":[0.000011667797,0.000092231014,0.002775536,0.000004358174,0.000005471518,0.000027699061,0.000030099178,0.0026975595,0.99362034,0.000015148347,0.00071577705,0.0000040695554],"about_ca_topic_score_codex":0.0032334756,"about_ca_topic_score_gemma":0.0059561203,"teacher_disagreement_score":0.0032334756,"about_ca_system_score_codex":0.00031055897,"about_ca_system_score_gemma":0.00012889228,"threshold_uncertainty_score":0.006429255},"labels":[],"label_agreement":null},{"id":"W4396856609","doi":"10.1088/1361-6641/ad4a65","title":"Electrical characteristics and trap signatures for Schottky barrier diodes on 4H-SiC, GaN-on-GaN, AlGaN/GaN epitaxial substrates","year":2024,"lang":"en","type":"article","venue":"Semiconductor Science and Technology","topic":"Semiconductor materials and interfaces","field":"Physics and Astronomy","cited_by":4,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Université de Sherbrooke","funders":"","keywords":"Materials science; Deep-level transient spectroscopy; Schottky barrier; Optoelectronics; Schottky diode; Heterojunction; Diode; High-electron-mobility transistor; Epitaxy; Wide-bandgap semiconductor; Transistor; Silicon; Nanotechnology; Voltage; Electrical engineering; Layer (electronics)","score_opus":0.011860535758851638,"score_gpt":0.26443267031490714,"score_spread":0.2525721345560555,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4396856609","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9992199,0.00009172993,0.00022146743,0.000007052236,0.0000029230578,0.000002742635,0.00017443179,0.000013388472,0.0002661655],"genre_scores_gemma":[0.9990109,0.000054918743,0.0001989654,0.000005805708,0.0000020998586,0.0000042034935,0.0002633481,0.0000044470544,0.00045514348],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99992716,0.0000068654367,0.000003949763,0.000012382064,0.0000331323,0.000016563616],"domain_scores_gemma":[0.9997434,0.00006484851,0.000048454458,0.000020668598,0.000093699164,0.000028940158],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00008286623,0.00017493706,0.00012050799,0.00029128286,0.00008770709,0.00018137677,0.00014286072,0.00016348543,0.00082652847],"category_scores_gemma":[0.00024755887,0.00007326127,0.0000925912,0.00019835359,0.00010890688,0.00013691997,0.00007896059,0.00010723212,0.0001437681],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00013218465,0.000012484837,0.00520344,0.000031623604,0.0000128994025,0.00008423412,0.00005256002,0.00045678872,0.99248284,0.00005941086,0.00007248469,0.0013990384],"study_design_scores_gemma":[0.00003101329,0.0009439042,0.16303617,0.000013826525,0.00005284864,0.00048626476,0.00022056587,0.010632274,0.82322365,0.000083624,0.0012557162,0.000020003528],"about_ca_topic_score_codex":0.0009569579,"about_ca_topic_score_gemma":0.0012686568,"teacher_disagreement_score":0.0009569579,"about_ca_system_score_codex":0.00014241447,"about_ca_system_score_gemma":0.0000704962,"threshold_uncertainty_score":0.0027650595},"labels":[],"label_agreement":null},{"id":"W4398144296","doi":"10.1088/1361-6641/ad4dd7","title":"Comparing the mean inner potential of Zn-VI semiconductor nanowires using off-axis electron holography","year":2024,"lang":"en","type":"article","venue":"Semiconductor Science and Technology","topic":"Nanowire Synthesis and Applications","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Toronto; University of Victoria; Simon Fraser University","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Electron holography; Semiconductor; Nanowire; Electron; Holography; Materials science; Optics; Chemistry; Physics; Optoelectronics; Quantum mechanics","score_opus":0.013637160307192505,"score_gpt":0.24026758214042723,"score_spread":0.22663042183323473,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4398144296","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9909305,0.00027569375,0.0031410116,0.000039972194,0.000018171526,0.000009610771,0.00023576972,0.00008071356,0.0052685086],"genre_scores_gemma":[0.997698,0.00010980686,0.0013938831,0.000008834136,0.000003588656,0.000007072669,0.00007865284,0.000011442878,0.00068870693],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99988496,0.000009464872,0.000005397861,0.000015436097,0.000065610264,0.000019155777],"domain_scores_gemma":[0.9998227,0.00007222841,0.000029358054,0.000013677106,0.00004970217,0.000012402822],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00012963849,0.00019498837,0.00016427315,0.0004013821,0.00014335087,0.0005548064,0.0003034906,0.0002409085,0.0015588795],"category_scores_gemma":[0.00038447292,0.00013481679,0.00013650647,0.00023219241,0.00023282108,0.00036458796,0.00023025696,0.00025848902,0.00017316444],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00016403146,0.00003492268,0.0026160295,0.000094445495,0.000013399589,0.0001261506,0.00010759323,0.0011711179,0.98638064,0.0012817545,0.0002504611,0.0077594486],"study_design_scores_gemma":[0.000011594187,0.000118446485,0.014926605,0.000013029344,0.000014001461,0.00012397494,0.00016851794,0.01599123,0.9672395,0.00030576854,0.0010719179,0.000015427715],"about_ca_topic_score_codex":0.0010841086,"about_ca_topic_score_gemma":0.0013139867,"teacher_disagreement_score":0.0015588795,"about_ca_system_score_codex":0.00041067158,"about_ca_system_score_gemma":0.00011304514,"threshold_uncertainty_score":0.0052149296},"labels":[],"label_agreement":null},{"id":"W4398763306","doi":"10.1088/1361-6641/ad5041","title":"Investigation of the forward gate leakage current in pGaN/AlGaN/GaN HEMTs through TCAD simulations","year":2024,"lang":"en","type":"article","venue":"Semiconductor Science and Technology","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":2,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McMaster University","funders":"","keywords":"Optoelectronics; Materials science; Leakage (economics); High-electron-mobility transistor; Engineering physics; Transistor; Electrical engineering; Physics; Engineering; Voltage","score_opus":0.023312700625544275,"score_gpt":0.28377388117211527,"score_spread":0.26046118054657097,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4398763306","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.95033014,0.00061069237,0.027380899,0.00042186846,0.00007018958,0.000108370776,0.001774047,0.0006130519,0.018690787],"genre_scores_gemma":[0.98851866,0.00022808013,0.009338216,0.0000743624,0.0000103460525,0.00009455962,0.000352138,0.000060390103,0.0013232664],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9999,0.000022601647,0.0000046487216,0.000010179551,0.000041712803,0.000020802994],"domain_scores_gemma":[0.99942505,0.00033691735,0.000043163913,0.000043294935,0.00013240946,0.00001922667],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00027251057,0.00043993746,0.00065839617,0.0005864478,0.0005084363,0.0004534426,0.00072847377,0.0009448774,0.0020506624],"category_scores_gemma":[0.0009822953,0.000417797,0.0006176011,0.00068939733,0.00038151495,0.00041703935,0.00017791758,0.00048200088,0.00021919257],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000026619837,0.000022680404,0.0011009818,0.000058003778,0.000029928773,0.000072528375,0.000030286386,0.9945064,0.0018872205,0.00073617685,0.00021963063,0.0013095236],"study_design_scores_gemma":[0.000009649735,0.000014241854,0.00032264483,0.0000060854836,0.000007469748,0.000007688738,0.000010938921,0.9985012,0.00070485217,0.00017533884,0.00023605718,0.0000039069337],"about_ca_topic_score_codex":0.019866498,"about_ca_topic_score_gemma":0.015138454,"teacher_disagreement_score":0.019866498,"about_ca_system_score_codex":0.0010314175,"about_ca_system_score_gemma":0.0011419713,"threshold_uncertainty_score":0.039501727},"labels":[],"label_agreement":null},{"id":"W4409469096","doi":"10.1088/1361-6641/adccf2","title":"Investigation of terbium-doped silicon oxide thin films: comparison of TEM images prepared by FIB and mechanical methods","year":2025,"lang":"en","type":"article","venue":"Semiconductor Science and Technology","topic":"Semiconductor materials and devices","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McMaster University; University of New Brunswick","funders":"Natural Sciences and Engineering Research Council of Canada; New Brunswick Innovation Foundation","keywords":"Terbium; Doping; Materials science; Silicon; Oxide; Silicon oxide; Thin film; Nanotechnology; Optoelectronics; Metallurgy; Silicon nitride; Luminescence","score_opus":0.01784785945016404,"score_gpt":0.30424798095306543,"score_spread":0.2864001215029014,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4409469096","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9843642,0.0013295145,0.011495663,0.00008210508,0.000038266215,0.000035854107,0.00046721048,0.00014486362,0.0020422305],"genre_scores_gemma":[0.97190607,0.00082299457,0.02514544,0.000060626604,0.000009759941,0.00003942427,0.0006331714,0.000066957116,0.0013155761],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99992883,0.0000072104453,0.0000072997127,0.000011539458,0.00003078595,0.000014403223],"domain_scores_gemma":[0.99960107,0.00017207862,0.00006432549,0.000040106795,0.000105141706,0.000017263279],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00021571215,0.00025481562,0.000144414,0.0004418719,0.0001759832,0.00021677234,0.0002739347,0.0003247676,0.0017162706],"category_scores_gemma":[0.0004524985,0.00020997076,0.000115240655,0.00019310192,0.00017404128,0.00022324517,0.000112887545,0.0002664136,0.00021546097],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00003092858,0.0000056043073,0.00028419672,0.000066083165,0.0000044156286,0.000081016995,0.00004165262,0.00005836593,0.9982803,0.00004154083,0.00002185329,0.0010839989],"study_design_scores_gemma":[0.000009235971,0.000087858905,0.0119492905,0.000017159657,0.000016195327,0.00062017114,0.00015273699,0.001765275,0.98421925,0.000033041208,0.0011222289,0.000007476316],"about_ca_topic_score_codex":0.0004553758,"about_ca_topic_score_gemma":0.00084214186,"teacher_disagreement_score":0.0017162706,"about_ca_system_score_codex":0.00015832976,"about_ca_system_score_gemma":0.0000904762,"threshold_uncertainty_score":0.005741477},"labels":[],"label_agreement":null}]}