{"meta":{"query_hash":"2a9d5b345905","filters":{"venue":"Solid-State Electronics"},"cohort_total":45,"direct_labels_cover":0,"predictions_cover":45,"exported":45,"export_cap":100000,"truncated":false,"label_status":"direct model label, unvalidated","prediction_status":"machine_predicted_unvalidated (Codex and Gemma teacher distillation)","score_status":"score_only:v0-immature-baseline","snapshot":{"source":"OpenAlex, pinned release, all 482 partitions","release":"2026-06-24","frame_built":"2026-07-12"},"permalink":"https://metacan.xera.ac/q/2a9d5b345905","api":"https://metacan.xera.ac/api/v1/cohort?venue=Solid-State+Electronics"},"results":[{"id":"W1964907854","doi":"10.1016/j.sse.2014.08.009","title":"GaN–InGaN LED efficiency reduction from parasitic electron currents in p-GaN","year":2014,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":7,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Lakehead University","funders":"","keywords":"Voltage droop; Optoelectronics; Electron; Materials science; Light-emitting diode; Heterojunction; Quantum tunnelling; Electrode; Wide-bandgap semiconductor; Saturation current; Current (fluid); Gallium nitride; Voltage; Physics; Layer (electronics); Nanotechnology; Voltage source","score_opus":0.007337940722567558,"score_gpt":0.266605402470353,"score_spread":0.2592674617477855,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1964907854","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9862686,0.0004018462,0.0054740934,0.000068521964,0.000031467283,0.000010126014,0.000108772765,0.00019529213,0.0074412134],"genre_scores_gemma":[0.99661535,0.00010110919,0.0007783591,0.000016314696,0.0000051353304,0.000004221075,0.000052710056,0.000024464083,0.002402373],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998933,0.000009027068,0.0000038110502,0.00002763144,0.000036659898,0.00002949506],"domain_scores_gemma":[0.9999379,0.0000115568755,0.000010363043,0.00001033191,0.000023150249,0.000006690239],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00012161353,0.00020479708,0.00019294255,0.00011323513,0.00019045181,0.0003560586,0.00060365384,0.00021244309,0.0014610168],"category_scores_gemma":[0.00012223891,0.00016516101,0.00027096286,0.00016102845,0.00018868479,0.00030429664,0.00018752599,0.000231074,0.00047279085],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00024462465,0.0000410735,0.0006627764,0.0000634224,0.000023596764,0.00013828833,0.00006156491,0.0025303056,0.9885494,0.00083247246,0.0004636382,0.006388775],"study_design_scores_gemma":[0.000009975758,0.0001214111,0.005403854,0.000008592943,0.00003124373,0.00013395186,0.00003130547,0.024639111,0.967423,0.00020395496,0.0019826663,0.0000108415],"about_ca_topic_score_codex":0.0013204518,"about_ca_topic_score_gemma":0.0024802668,"teacher_disagreement_score":0.0014610168,"about_ca_system_score_codex":0.0006409303,"about_ca_system_score_gemma":0.00016825345,"threshold_uncertainty_score":0.0048876405},"labels":[],"label_agreement":null},{"id":"W1982238004","doi":"10.1016/s0038-1101(00)00083-6","title":"A scalable thermal model for trench isolated bipolar devices","year":2000,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":17,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Nortel (Canada); Carleton University","funders":"","keywords":"Trench; Bipolar junction transistor; Scalability; Thermal; Thermal resistance; Materials science; Transistor; Variety (cybernetics); Optoelectronics; Electronic engineering; Computer science; Electrical engineering; Engineering; Physics; Nanotechnology; Thermodynamics; Voltage","score_opus":0.01289828342069317,"score_gpt":0.24623076930596696,"score_spread":0.2333324858852738,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1982238004","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.072883934,0.0017671055,0.84781533,0.0007802291,0.0003081133,0.00022959069,0.0010434011,0.0012942508,0.07387801],"genre_scores_gemma":[0.89989954,0.0013245917,0.05707258,0.00031584274,0.00016537703,0.000480094,0.0006142232,0.0005929483,0.039534763],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99986124,0.000018979701,0.0000040989685,0.000030781106,0.000054026954,0.000030964562],"domain_scores_gemma":[0.99981886,0.0000653461,0.000022203567,0.000027413038,0.000051418712,0.000014910409],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00021703332,0.0008769797,0.0009571493,0.00034585918,0.0006290741,0.00093477505,0.0023029111,0.0014016272,0.006171568],"category_scores_gemma":[0.00078660756,0.0005455077,0.00080735394,0.00044925188,0.00055073394,0.0014570305,0.0007145464,0.0009911068,0.0011873721],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000023379765,0.000028484297,0.00008349946,0.00004976114,0.00001651733,0.00007367143,0.00002596824,0.976299,0.006161293,0.013385477,0.0008926213,0.0029604088],"study_design_scores_gemma":[0.0000030990761,0.000005899399,0.000024659508,0.0000020066161,0.0000032356606,0.000006840878,0.0000033439092,0.9976109,0.00024998072,0.0017377621,0.00034997595,0.000002238414],"about_ca_topic_score_codex":0.0074614063,"about_ca_topic_score_gemma":0.0076732202,"teacher_disagreement_score":0.0074614063,"about_ca_system_score_codex":0.0012285255,"about_ca_system_score_gemma":0.0010800898,"threshold_uncertainty_score":0.020645916},"labels":[],"label_agreement":null},{"id":"W1989855709","doi":"10.1016/j.sse.2005.01.013","title":"Ion implantation dose high-resolution monitoring in Si wafers using laser infrared photothermal radiometry with lock-in common-mode-rejection demodulation","year":2005,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"Ion-surface interactions and analysis","field":"Engineering","cited_by":2,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Toronto","funders":"","keywords":"Wafer; Materials science; Ion implantation; Demodulation; Photothermal therapy; Ion; Optics; Infrared; Optoelectronics; Laser; Radiometry; Lock (firearm); Chemistry; Nanotechnology; Electrical engineering; Physics","score_opus":0.006592163174595163,"score_gpt":0.2538244277463755,"score_spread":0.24723226457178032,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1989855709","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.987805,0.00073410955,0.0096225655,0.00008888518,0.000020164394,0.000030547406,0.00010886058,0.00019458629,0.0013952297],"genre_scores_gemma":[0.99382645,0.00017906674,0.0046816175,0.000042248168,0.0000118351545,0.000020259007,0.000054605713,0.000028795832,0.001155096],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.999691,0.000047565463,0.000014252109,0.00008871073,0.00012146869,0.000036945727],"domain_scores_gemma":[0.99964523,0.00012739853,0.00007506514,0.000056516747,0.00007430757,0.00002141295],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00034936567,0.0002816804,0.00033058453,0.00025472333,0.00025910017,0.00043768162,0.0005739912,0.0004377776,0.00065525435],"category_scores_gemma":[0.00052356056,0.00024700293,0.00015579714,0.00021131802,0.00041787967,0.00055470853,0.00034365972,0.00038335007,0.0002202224],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00024845975,0.000027350978,0.00077426026,0.000025314366,0.0000064793676,0.000029463752,0.00006936405,0.00027067863,0.9961075,0.000080138,0.000047091926,0.0023138984],"study_design_scores_gemma":[0.000015871681,0.00027416652,0.004860177,0.0000031835766,0.000013807426,0.00007682839,0.000039038467,0.004091218,0.990193,0.000024947902,0.0004001857,0.000007576994],"about_ca_topic_score_codex":0.0008542003,"about_ca_topic_score_gemma":0.0013598015,"teacher_disagreement_score":0.0008542003,"about_ca_system_score_codex":0.00048065928,"about_ca_system_score_gemma":0.0002183811,"threshold_uncertainty_score":0.0034874082},"labels":[],"label_agreement":null},{"id":"W1996637315","doi":"10.1016/j.sse.2009.03.003","title":"Current conduction models in the high temperature single-electron transistor","year":2009,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"Quantum and electron transport phenomena","field":"Physics and Astronomy","cited_by":18,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Université de Sherbrooke","funders":"Natural Sciences and Engineering Research Council of Canada; Fonds Québécois de la Recherche sur la Nature et les Technologies","keywords":"Thermionic emission; Thermal conduction; Transistor; Coulomb blockade; Electron; Materials science; Current (fluid); Condensed matter physics; Monte Carlo method; Conduction electron; Optoelectronics; Physics; Electrical engineering; Thermodynamics; Engineering; Voltage; Quantum mechanics","score_opus":0.011956826085221152,"score_gpt":0.24640023759428642,"score_spread":0.23444341150906528,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1996637315","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.21133615,0.01666809,0.56980413,0.009019359,0.0017964012,0.00018504943,0.0005004339,0.0006925939,0.18999787],"genre_scores_gemma":[0.89821196,0.005906429,0.021129075,0.0007640693,0.00060816115,0.00017514029,0.0002498697,0.00025541984,0.072699934],"study_design_codex":"theoretical_or_conceptual","study_design_gemma":"theoretical_or_conceptual","domain_scores_codex":[0.9997906,0.00006682155,0.0000100422,0.000027698119,0.00007325687,0.000031552256],"domain_scores_gemma":[0.9995435,0.00023871473,0.000025492374,0.00005464675,0.00010476463,0.000032896747],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0009208552,0.00065644947,0.00095913437,0.0008331823,0.0006821108,0.0016519318,0.0023225148,0.0019047182,0.004386966],"category_scores_gemma":[0.0014844856,0.00035475648,0.00095287367,0.0005700945,0.0015724929,0.0040267673,0.0005596138,0.0013830983,0.0010491082],"study_design_candidate":"theoretical_or_conceptual","study_design_consensus":"theoretical_or_conceptual","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00006191742,0.000051654024,0.000111475056,0.00011699667,0.000023407167,0.00013722813,0.00021631592,0.08939502,0.005403228,0.89832294,0.0025169468,0.003642983],"study_design_scores_gemma":[0.000023990397,0.00003447445,0.00013453691,0.000029154167,0.000020394256,0.00008597372,0.00004719767,0.67799324,0.0006765802,0.3183702,0.002567038,0.000017324564],"about_ca_topic_score_codex":0.0018234174,"about_ca_topic_score_gemma":0.0015311867,"teacher_disagreement_score":0.004386966,"about_ca_system_score_codex":0.0010871212,"about_ca_system_score_gemma":0.0006754601,"threshold_uncertainty_score":0.014675856},"labels":[],"label_agreement":null},{"id":"W1997322169","doi":"10.1016/s0038-1101(01)00305-7","title":"Modeling thermal resistance in trench-isolated bipolar technologies including trench heat flow","year":2002,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"Silicon Carbide Semiconductor Technologies","field":"Engineering","cited_by":39,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Carleton University","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Trench; Common emitter; Thermal conduction; Materials science; Thermal resistance; Bipolar junction transistor; Thermal; Optoelectronics; Flow (mathematics); Mechanics; Transistor; Electrical engineering; Composite material; Engineering; Physics; Voltage; Thermodynamics","score_opus":0.01959249434021978,"score_gpt":0.2308944768009676,"score_spread":0.21130198246074783,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1997322169","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.68749464,0.0016300842,0.26377204,0.00056272565,0.00017829529,0.00014321403,0.00040627545,0.0009726348,0.0448401],"genre_scores_gemma":[0.985171,0.0002956639,0.0065062437,0.000047735026,0.000025782345,0.000043998134,0.00006824339,0.0001082114,0.007733042],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99985373,0.00003212254,0.0000031668576,0.00003378294,0.000039416223,0.000037674872],"domain_scores_gemma":[0.9997662,0.000111299036,0.000032001557,0.0000229174,0.00005202868,0.000015441345],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00022612434,0.0006474285,0.0006583049,0.00035487267,0.00039607854,0.0007194562,0.001241924,0.0012395739,0.0020108914],"category_scores_gemma":[0.0010422202,0.000568845,0.00054576126,0.00040902392,0.00048647213,0.0012507156,0.00035430293,0.0004308907,0.00040202602],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0000217972,0.000022789698,0.00020230423,0.000020975482,0.000013860218,0.00004838522,0.000019566332,0.99244833,0.0037407891,0.001646975,0.00017695152,0.0016372654],"study_design_scores_gemma":[0.0000025758206,0.0000088774805,0.000081689526,0.0000014840018,0.0000045615534,0.0000045911574,0.000003820761,0.99903595,0.00044251457,0.00029718826,0.00011479722,0.0000020111584],"about_ca_topic_score_codex":0.015638415,"about_ca_topic_score_gemma":0.0169467,"teacher_disagreement_score":0.015638415,"about_ca_system_score_codex":0.0013376704,"about_ca_system_score_gemma":0.0009688215,"threshold_uncertainty_score":0.03109479},"labels":[],"label_agreement":null},{"id":"W2002010382","doi":"10.1016/s0038-1101(01)00289-1","title":"Carrier transport and luminescence in composite organic–inorganic light-emitting devices","year":2002,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"Organic Light-Emitting Diodes Research","field":"Engineering","cited_by":14,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Toronto","funders":"","keywords":"Composite number; Nanocrystal; Luminescence; Optoelectronics; Materials science; Quantum dot; Polymer; Light emission; Light-emitting diode; Nanotechnology; Composite material","score_opus":0.006910407943409027,"score_gpt":0.217302573843917,"score_spread":0.21039216590050797,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2002010382","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9960129,0.0006225347,0.0015636064,0.00008439244,0.000017875516,0.000008249124,0.00002571444,0.00003060149,0.0016340271],"genre_scores_gemma":[0.99626166,0.00022238112,0.0009566929,0.000022042559,0.000011935423,0.000011298831,0.00005525651,0.000017044122,0.0024417196],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998889,0.000013794181,0.0000040542554,0.000027766542,0.000036675403,0.000028812918],"domain_scores_gemma":[0.99986327,0.000075026896,0.000015206702,0.0000059660238,0.00002802422,0.00001240723],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00027620269,0.00020945827,0.0002283686,0.00033140846,0.00042703934,0.0008650635,0.00048710688,0.00051916606,0.0011325685],"category_scores_gemma":[0.00048627393,0.00017448759,0.00017523556,0.0002128224,0.00050850486,0.0008114277,0.00026328274,0.0004701064,0.00022782618],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00051859894,0.00011453323,0.0003690119,0.00010781598,0.000009556181,0.00011489271,0.00014542122,0.00079103437,0.9893762,0.005921185,0.00021147144,0.0023202358],"study_design_scores_gemma":[0.00006320962,0.00018265173,0.0013631269,0.000010364615,0.000025487021,0.000090645626,0.000109049266,0.029670645,0.9664826,0.0007545073,0.0012330397,0.000014631847],"about_ca_topic_score_codex":0.0014635128,"about_ca_topic_score_gemma":0.0016044459,"teacher_disagreement_score":0.0014635128,"about_ca_system_score_codex":0.00080364384,"about_ca_system_score_gemma":0.00027569462,"threshold_uncertainty_score":0.005830884},"labels":[],"label_agreement":null},{"id":"W2006257990","doi":"10.1016/j.sse.2007.07.011","title":"Simulation of a dual gate organic transistor compatible with printing methods","year":2007,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"Organic Electronics and Photovoltaics","field":"Engineering","cited_by":7,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of British Columbia","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Organic field-effect transistor; Materials science; Transistor; Optoelectronics; Organic semiconductor; Semiconductor; Field-effect transistor; Schottky barrier; Voltage; Electrical engineering","score_opus":0.008781989402564713,"score_gpt":0.2750154381408469,"score_spread":0.2662334487382822,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2006257990","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9141728,0.00021702665,0.04056394,0.00084551465,0.00016725558,0.00006692447,0.0007217807,0.00048515078,0.04275955],"genre_scores_gemma":[0.9877345,0.00007308331,0.007692281,0.00007487733,0.000016287291,0.000047289883,0.00015400797,0.000050595772,0.004157071],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9999037,0.000015946891,0.000002812711,0.000012774631,0.000030711188,0.000033947534],"domain_scores_gemma":[0.9994931,0.00035612012,0.000027579927,0.000031012198,0.00005392446,0.00003822774],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0001419309,0.00036094477,0.00050842296,0.00029050297,0.0005967183,0.00063011074,0.00093687355,0.001734331,0.0063568326],"category_scores_gemma":[0.0007473945,0.00033664517,0.0005889387,0.0004141998,0.0005591103,0.00045710127,0.00031150907,0.00053180335,0.00025800592],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0000569709,0.000040068975,0.00038890258,0.000047967485,0.00001820941,0.00018136922,0.000030424406,0.99067044,0.003833621,0.002967512,0.00032910198,0.0014353475],"study_design_scores_gemma":[0.000017533428,0.00002821486,0.00011425667,0.0000024107856,0.0000058190126,0.000012719701,0.000009791348,0.99793696,0.0012988742,0.00035045046,0.00021897972,0.000004072504],"about_ca_topic_score_codex":0.010446507,"about_ca_topic_score_gemma":0.0062112384,"teacher_disagreement_score":0.010446507,"about_ca_system_score_codex":0.0007639625,"about_ca_system_score_gemma":0.0008751058,"threshold_uncertainty_score":0.021265745},"labels":[],"label_agreement":null},{"id":"W2013008031","doi":"10.1016/j.sse.2008.06.008","title":"Gate dielectric engineering of quarter sub micron AlGaN/GaN MISHFET: A new device architecture for improved transconductance and high cut-off frequency","year":2008,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":7,"is_retracted":false,"has_abstract":false,"route_ca_aff":false,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":true,"ca_institutions":"","funders":"","keywords":"Transconductance; Materials science; Dielectric; Optoelectronics; Quarter (Canadian coin); Electrical engineering; Electronic engineering; Transistor; Engineering; Voltage","score_opus":0.007348290989770578,"score_gpt":0.217789727785481,"score_spread":0.21044143679571042,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2013008031","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9898463,0.00032611995,0.0073351483,0.00009929018,0.000045587683,0.000010369645,0.0001175931,0.00013346499,0.0020862608],"genre_scores_gemma":[0.99253875,0.00017503991,0.005640419,0.000018591214,0.0000064217174,0.0000048934985,0.00005684741,0.00001981011,0.0015393005],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99997306,0.0000019122172,0.0000015028573,0.000005036316,0.000011136991,0.0000073319907],"domain_scores_gemma":[0.9999409,0.000007649936,0.000016272354,0.000009774586,0.000016104936,0.000009300525],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00005072471,0.00012694228,0.00012881057,0.000063810636,0.00012070154,0.00023424368,0.00023496078,0.0001567979,0.00044794416],"category_scores_gemma":[0.00009773311,0.00007520653,0.000058507678,0.00008184772,0.00011220039,0.00021350064,0.00010212782,0.00012221001,0.000114058195],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000032379903,0.00001045772,0.0002165443,0.00003363473,0.000004113593,0.000099512814,0.000023560611,0.00073517463,0.99554884,0.00064702466,0.00015555478,0.0024931883],"study_design_scores_gemma":[0.000010615586,0.00021103733,0.0022348359,0.000005908384,0.000011415502,0.000516675,0.00005476364,0.020606514,0.9731982,0.0006003761,0.0025411875,0.000008456674],"about_ca_topic_score_codex":0.0005062669,"about_ca_topic_score_gemma":0.0013816014,"teacher_disagreement_score":0.0005062669,"about_ca_system_score_codex":0.00020897551,"about_ca_system_score_gemma":0.00019582681,"threshold_uncertainty_score":0.001516223},"labels":[],"label_agreement":null},{"id":"W2015941658","doi":"10.1016/j.sse.2006.06.014","title":"Application of PVD silver for integrated microwave passives in silicon technology","year":2006,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"Copper Interconnects and Reliability","field":"Materials Science","cited_by":6,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Carleton University","funders":"","keywords":"Materials science; Electromigration; Silicon; Microwave; Monolithic microwave integrated circuit; Optoelectronics; Deposition (geology); Broadband; Copper; Electronic engineering; Metallurgy; Composite material; Computer science; Telecommunications; Engineering","score_opus":0.004420832403206465,"score_gpt":0.2486937233043471,"score_spread":0.24427289090114065,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2015941658","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.90831935,0.0066513023,0.06197529,0.0004688824,0.0004279936,0.00003990992,0.000074138596,0.0010836372,0.020959536],"genre_scores_gemma":[0.9804524,0.00094124896,0.012411496,0.000047245743,0.000030305288,0.000008651449,0.0000346224,0.000057072455,0.006016991],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99991786,0.000009747888,0.000004176532,0.000018983601,0.00003456467,0.000014651829],"domain_scores_gemma":[0.9998579,0.000035832323,0.000019503765,0.000029819294,0.000045779878,0.000011060246],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0001430712,0.00018141083,0.00017598705,0.00022413817,0.00022784834,0.00051980827,0.0003363097,0.00031965523,0.00076331117],"category_scores_gemma":[0.00035880893,0.00015655722,0.0001835331,0.00021866115,0.00022578049,0.000352592,0.00034376915,0.00025465657,0.00031076334],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00014500637,0.00003491389,0.00064499443,0.00018753715,0.000009811392,0.00024091204,0.000086727916,0.0008509183,0.9676105,0.0030314194,0.00046916358,0.026688164],"study_design_scores_gemma":[0.000016932041,0.0002659693,0.0008243806,0.000012988412,0.000019787141,0.0004091952,0.00003642517,0.006847044,0.984512,0.0007619051,0.006287154,0.0000062386875],"about_ca_topic_score_codex":0.00024900355,"about_ca_topic_score_gemma":0.0005191708,"teacher_disagreement_score":0.00076331117,"about_ca_system_score_codex":0.00023095684,"about_ca_system_score_gemma":0.00018466268,"threshold_uncertainty_score":0.002553463},"labels":[],"label_agreement":null},{"id":"W2031219765","doi":"10.1016/j.sse.2011.05.010","title":"Modeling of current–voltage characteristics of thin film solar cells","year":2011,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"Chalcogenide Semiconductor Thin Films","field":"Engineering","cited_by":28,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Concordia University","funders":"","keywords":"Theory of solar cells; Photocurrent; Solar cell; Current (fluid); Materials science; Absorption (acoustics); Optoelectronics; Drift current; Poisson's equation; Voltage; Thin film; Computational physics; Physics; Solar cell efficiency; Thermodynamics; Nanotechnology; Composite material","score_opus":0.02492885902559945,"score_gpt":0.23615981018854118,"score_spread":0.21123095116294172,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2031219765","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.6771588,0.002757779,0.2426806,0.0009829901,0.00020977105,0.0002185084,0.0012084288,0.0015456688,0.073237486],"genre_scores_gemma":[0.9864936,0.00059414917,0.004301288,0.0000618914,0.00003564242,0.000058615482,0.00019754033,0.00007329207,0.008183963],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99990916,0.000015447531,0.0000034569557,0.0000143342595,0.000042585056,0.000015004163],"domain_scores_gemma":[0.99974626,0.00012039957,0.000023359873,0.000021731767,0.0000760036,0.000012163555],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00015094677,0.0004478385,0.00060927303,0.00030087872,0.00033299133,0.0008452201,0.001494801,0.0013076955,0.002935323],"category_scores_gemma":[0.00078700756,0.0003522218,0.00055223965,0.0004533071,0.0003617497,0.0007939678,0.00019249253,0.00047996565,0.0005400605],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000039485443,0.000030859348,0.00041169857,0.00006011069,0.000028464718,0.00012227279,0.000051598818,0.977183,0.01471354,0.0025337434,0.00044545316,0.0043797637],"study_design_scores_gemma":[0.0000037690952,0.000012602447,0.00013492328,0.000004072683,0.0000058396818,0.000010835079,0.000006769745,0.9970714,0.0019028566,0.00047183703,0.00037224728,0.0000028542916],"about_ca_topic_score_codex":0.012779812,"about_ca_topic_score_gemma":0.0063779475,"teacher_disagreement_score":0.012779812,"about_ca_system_score_codex":0.000950937,"about_ca_system_score_gemma":0.0006240389,"threshold_uncertainty_score":0.025410831},"labels":[],"label_agreement":null},{"id":"W2033705632","doi":"10.1016/j.sse.2004.05.047","title":"Self-heating in multi-emitter SiGe HBTs","year":2004,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":11,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Institute for Microstructural Sciences","funders":"","keywords":"Common emitter; Materials science; Optoelectronics; Heterojunction bipolar transistor; Bipolar junction transistor; Biasing; Transistor; Heterostructure-emitter bipolar transistor; Thermal; Coupling (piping); Voltage; Electrical engineering; Physics; Composite material","score_opus":0.01411969736616136,"score_gpt":0.2599645760410089,"score_spread":0.24584487867484756,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2033705632","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99010146,0.00052148657,0.0049630716,0.000063162435,0.000021480508,0.0000048187526,0.000017068556,0.00010233616,0.004205164],"genre_scores_gemma":[0.9980057,0.000046886333,0.00027605792,0.000005885462,0.000004398232,0.0000017977706,0.0000085400125,0.0000093348135,0.0016414371],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99995494,0.000005208405,0.0000014323347,0.000008200116,0.000013917111,0.00001623967],"domain_scores_gemma":[0.99986637,0.00006690976,0.000015403853,0.000020437486,0.000018600487,0.000012259655],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000110317924,0.000084390565,0.00014631948,0.00017711865,0.00024587297,0.00029055533,0.00025628068,0.00016035412,0.0017025726],"category_scores_gemma":[0.00027603604,0.00013073177,0.0001232557,0.00012204302,0.00036280084,0.00037073914,0.00027954893,0.00016407591,0.0002261513],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00043578394,0.00009693761,0.004281514,0.00010018505,0.000028060114,0.0005084169,0.00046371593,0.02078546,0.9472152,0.009378874,0.0005914789,0.01611433],"study_design_scores_gemma":[0.00002435184,0.00022913197,0.014490524,0.000017951932,0.000032251322,0.0005717755,0.0002682045,0.16206795,0.8158726,0.0030118127,0.0033924424,0.00002100856],"about_ca_topic_score_codex":0.00032017767,"about_ca_topic_score_gemma":0.00047893185,"teacher_disagreement_score":0.0017025726,"about_ca_system_score_codex":0.00026205461,"about_ca_system_score_gemma":0.00009294718,"threshold_uncertainty_score":0.0056957006},"labels":[],"label_agreement":null},{"id":"W2035115639","doi":"10.1016/s0038-1101(00)00134-9","title":"Effects of O2/N2O-plasma treatment on nitride films on strained Si","year":2000,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"Semiconductor materials and devices","field":"Engineering","cited_by":3,"is_retracted":false,"has_abstract":false,"route_ca_aff":false,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"","funders":"University of Tokyo; Ryerson University","keywords":"Nitride; Plasma; Materials science; Composite material; Physics; Quantum mechanics; Layer (electronics)","score_opus":0.005705708426349376,"score_gpt":0.2196254731668914,"score_spread":0.21391976474054203,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2035115639","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9972236,0.000459114,0.00023241529,0.00004868229,0.0000351588,0.00001369949,0.00015370462,0.000022547707,0.0018111055],"genre_scores_gemma":[0.99709487,0.00033804314,0.0003872183,0.000057554567,0.00001611393,0.000012553526,0.00018935918,0.00002424935,0.0018798785],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998598,0.0000107384685,0.000008008619,0.000030158164,0.000031708496,0.000059635488],"domain_scores_gemma":[0.9998198,0.00007795199,0.000028578814,0.000018883175,0.000033226635,0.000021478463],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00013528645,0.00027450098,0.0003645704,0.00012739896,0.00036779794,0.00035565454,0.00032003544,0.0004553415,0.0032270763],"category_scores_gemma":[0.00028090054,0.00023410904,0.00020991571,0.00016809149,0.00026847157,0.00032056804,0.00016438142,0.00041047097,0.00027653703],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00081941567,0.000043754502,0.00034148374,0.00010345442,0.000022294098,0.00015160696,0.00008908985,0.00022636101,0.9966143,0.000054027485,0.00013507664,0.0013992023],"study_design_scores_gemma":[0.00003506088,0.00028805697,0.0041289837,0.0000080470545,0.00001688258,0.000057577563,0.0001134934,0.0006765539,0.99368876,0.000022217231,0.0009572185,0.0000071870954],"about_ca_topic_score_codex":0.003081396,"about_ca_topic_score_gemma":0.0055226455,"teacher_disagreement_score":0.0032270763,"about_ca_system_score_codex":0.0003075548,"about_ca_system_score_gemma":0.00021563092,"threshold_uncertainty_score":0.010795653},"labels":[],"label_agreement":null},{"id":"W2036914515","doi":"10.1016/s0038-1101(02)00379-9","title":"Properties of 1.3 μm InGaNAs laser material grown by MBE using a N2/Ar RF plasma","year":2003,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"Semiconductor Quantum Structures and Devices","field":"Physics and Astronomy","cited_by":12,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Institute for Microstructural Sciences","funders":"","keywords":"Plasma; Materials science; Laser; Optoelectronics; Analytical Chemistry (journal); Chemistry; Optics; Physics; Environmental chemistry; Nuclear physics","score_opus":0.013268345854364883,"score_gpt":0.24025355445646024,"score_spread":0.22698520860209537,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2036914515","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99692565,0.0003461494,0.00027579625,0.000059390604,0.000011563352,0.0000055505225,0.00038179976,0.00006076452,0.0019334753],"genre_scores_gemma":[0.9972465,0.00014349025,0.0005153768,0.000024302306,0.000008653222,0.000008794773,0.00024602274,0.000021081836,0.0017857284],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99992585,0.0000049479913,0.0000032818925,0.000020567833,0.000025754773,0.000019585017],"domain_scores_gemma":[0.99970144,0.00012633612,0.00006547516,0.000025447043,0.00005791005,0.000023389051],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00018051617,0.00017985454,0.0002666619,0.00030788628,0.00038535337,0.0003418853,0.0004050761,0.00042066764,0.002586232],"category_scores_gemma":[0.00033587805,0.0001553939,0.00013685274,0.00022075533,0.0002633606,0.0003322015,0.00010010637,0.00025038648,0.00046560078],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00031205014,0.000025339645,0.0008460177,0.00007197867,0.000010945495,0.000099716664,0.00009329935,0.0004226127,0.9963342,0.00025874082,0.00022946812,0.0012955939],"study_design_scores_gemma":[0.00004333406,0.0003963599,0.028143222,0.00001833176,0.000036180387,0.00019283852,0.00015203876,0.005853132,0.96294445,0.00012815629,0.0020668104,0.000025058838],"about_ca_topic_score_codex":0.0041011265,"about_ca_topic_score_gemma":0.003638285,"teacher_disagreement_score":0.0041011265,"about_ca_system_score_codex":0.00047402058,"about_ca_system_score_gemma":0.000248934,"threshold_uncertainty_score":0.008651853},"labels":[],"label_agreement":null},{"id":"W2055770280","doi":"10.1016/s0038-1101(02)00471-9","title":"Modeling negative capacitance effect in organic polymers","year":2003,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"Conducting polymers and applications","field":"Materials Science","cited_by":35,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Victoria","funders":"","keywords":"Capacitance; Materials science; Dispersion (optics); Negative impedance converter; Thermal conduction; Physics; Condensed matter physics; Computational physics; Chemistry; Thermodynamics; Optics; Quantum mechanics; Electrode; Voltage","score_opus":0.009965190934319218,"score_gpt":0.25987900654672125,"score_spread":0.24991381561240203,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2055770280","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.72040796,0.0007850118,0.20174673,0.00094050565,0.000261916,0.000086343556,0.00016665534,0.0005373558,0.07506747],"genre_scores_gemma":[0.98758614,0.00026536355,0.0053154896,0.000068409514,0.000028946748,0.00001609139,0.000030777937,0.000045761746,0.0066430955],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9999167,0.000014737071,0.0000016516442,0.000013443821,0.00003283044,0.000020716192],"domain_scores_gemma":[0.9997793,0.00013271475,0.000019421566,0.00001935842,0.000031107287,0.000018160665],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00015314185,0.00038310327,0.00028423732,0.00025354768,0.0003069326,0.000492826,0.0009276271,0.001034418,0.0022590496],"category_scores_gemma":[0.00090009416,0.000167694,0.0002352825,0.00025684084,0.00053494953,0.0010098846,0.00025785642,0.00039915962,0.00022638752],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00006545043,0.0001120486,0.0004074607,0.00012890271,0.00001379637,0.00037219626,0.000080015685,0.88495266,0.04454892,0.06149892,0.0006910768,0.0071285726],"study_design_scores_gemma":[0.000005130357,0.000010486198,0.000055447235,0.0000020497046,0.0000031401134,0.00001783686,0.0000050967324,0.9939774,0.00321645,0.0022798488,0.00042404435,0.0000030646418],"about_ca_topic_score_codex":0.0038061645,"about_ca_topic_score_gemma":0.0033290186,"teacher_disagreement_score":0.0038061645,"about_ca_system_score_codex":0.00060766254,"about_ca_system_score_gemma":0.0003882439,"threshold_uncertainty_score":0.0075680614},"labels":[],"label_agreement":null},{"id":"W2057948294","doi":"10.1016/s0038-1101(02)00008-4","title":"Dynamic finite element approach for analyzing stress and distortion in multilevel devices","year":2002,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"Integrated Circuits and Semiconductor Failure Analysis","field":"Engineering","cited_by":6,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Université du Québec à Trois-Rivières; Université du Québec en Outaouais","funders":"","keywords":"Finite element method; Residual stress; Distortion (music); Thermal; Stress (linguistics); Transient (computer programming); Deformation (meteorology); Materials science; Structural engineering; Electronic engineering; Computer science; Engineering; Composite material; Physics","score_opus":0.010919470811700032,"score_gpt":0.22741427579387896,"score_spread":0.21649480498217893,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2057948294","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.052185543,0.00022246662,0.9400008,0.0001487933,0.00003811051,0.000041003714,0.00007285782,0.00022009341,0.007070393],"genre_scores_gemma":[0.83544225,0.00031605118,0.15546301,0.00014280596,0.000034750563,0.00019873572,0.00017642004,0.00014866714,0.008077254],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9998772,0.00002088645,0.000004572397,0.0000130735725,0.00006917365,0.000015156602],"domain_scores_gemma":[0.9997999,0.000101044345,0.000021945141,0.000021865962,0.000043045326,0.000012278309],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00019884441,0.0004082497,0.0006529855,0.000597544,0.00042367954,0.00056313246,0.0011696016,0.0009760537,0.0025207624],"category_scores_gemma":[0.0007264218,0.0004964647,0.00046067705,0.0003634941,0.0005598403,0.00053933595,0.00057335914,0.00063779147,0.000364313],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000026377293,0.000039047256,0.00030727845,0.000025767344,0.000022455932,0.000051955598,0.00004990669,0.9722206,0.0071975095,0.007865364,0.00021845418,0.011975378],"study_design_scores_gemma":[0.0000018361769,0.0000054573998,0.00004531989,0.0000016600932,0.0000018724995,0.000008141202,0.000007590982,0.9986237,0.00039217752,0.0007014461,0.00020887589,0.0000019404274],"about_ca_topic_score_codex":0.0040555703,"about_ca_topic_score_gemma":0.004888286,"teacher_disagreement_score":0.0040555703,"about_ca_system_score_codex":0.000481568,"about_ca_system_score_gemma":0.00055617763,"threshold_uncertainty_score":0.008432806},"labels":[],"label_agreement":null},{"id":"W2061010231","doi":"10.1016/s0038-1101(01)00336-7","title":"A model for exciton formation in organic electroluminescent devices","year":2002,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"Organic Light-Emitting Diodes Research","field":"Engineering","cited_by":6,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Victoria","funders":"","keywords":"Exciton; Electroluminescence; Charge (physics); Charge carrier; Chemical physics; Materials science; Optoelectronics; Charge-carrier density; Chemistry; Condensed matter physics; Physics; Nanotechnology; Quantum mechanics","score_opus":0.019264728159544,"score_gpt":0.251156904200712,"score_spread":0.23189217604116802,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2061010231","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.10952925,0.0035773832,0.6569492,0.010897934,0.0019909816,0.0005221718,0.00082490424,0.0010936504,0.21461459],"genre_scores_gemma":[0.77622354,0.0027754572,0.08366353,0.002016561,0.00034315293,0.0007811995,0.0004098133,0.00047470155,0.13331214],"study_design_codex":"theoretical_or_conceptual","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99984145,0.000028972103,0.00000957471,0.000033931698,0.000048501795,0.000037632108],"domain_scores_gemma":[0.9998448,0.00006612263,0.0000133630565,0.000027579896,0.000027111375,0.000021095602],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00026420056,0.00071141135,0.0007289463,0.0007868009,0.0012978048,0.001562002,0.002275047,0.002565518,0.011297183],"category_scores_gemma":[0.0006819197,0.00028715425,0.00093074125,0.00059495127,0.0011170736,0.0033132634,0.0008947073,0.0012387224,0.002538269],"study_design_candidate":"simulation_or_modeling","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000034433524,0.000064068496,0.000086355445,0.00011492958,0.000008425641,0.00030391783,0.000119971344,0.016088134,0.010364503,0.9655447,0.0025730412,0.0046975235],"study_design_scores_gemma":[0.00004388338,0.00007612437,0.00012565745,0.00004032353,0.00001552883,0.0003215975,0.000089452464,0.26298147,0.006286571,0.71739984,0.012586976,0.00003263479],"about_ca_topic_score_codex":0.00088611303,"about_ca_topic_score_gemma":0.0007650407,"teacher_disagreement_score":0.011297183,"about_ca_system_score_codex":0.0010899677,"about_ca_system_score_gemma":0.00056781684,"threshold_uncertainty_score":0.03779286},"labels":[],"label_agreement":null},{"id":"W2069231649","doi":"10.1016/j.sse.2014.08.001","title":"Alternative isolation-feature geometries and polarization-engineering of polar AlGaN/GaN HFETs","year":2014,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":4,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Concordia University","funders":"Natural Sciences and Engineering Research Council of Canada; CMC Microsystems","keywords":"Polar; Polarization (electrochemistry); Isolation (microbiology); Optoelectronics; Materials science; Wide-bandgap semiconductor; Feature (linguistics); Computer science; Physics; Chemistry; Biology; Astronomy; Bioinformatics","score_opus":0.004267138411887301,"score_gpt":0.22159938944665195,"score_spread":0.21733225103476464,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2069231649","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9693317,0.00032687042,0.012916368,0.00014730527,0.00007090144,0.00001845399,0.00023281766,0.00010021139,0.016855448],"genre_scores_gemma":[0.9941194,0.00012816365,0.004017197,0.000024087414,0.0000114263585,0.000008564021,0.00009681518,0.00001616044,0.0015783346],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999418,0.000004276856,0.0000018888837,0.000012723759,0.000017628856,0.000021562526],"domain_scores_gemma":[0.9999546,0.00000741548,0.000012332365,0.000007960445,0.0000103789125,0.000007388542],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00007185588,0.00020766181,0.000121012585,0.0001632991,0.00024902943,0.00055702915,0.0003617147,0.00025109938,0.001521155],"category_scores_gemma":[0.00010826346,0.00010709334,0.0001040624,0.00012517054,0.000258742,0.00044250122,0.00026019686,0.0002587627,0.00031803592],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00028868375,0.000086069194,0.0009508031,0.00010119026,0.000011316738,0.00026434934,0.00009135547,0.0026185766,0.9685516,0.014673223,0.0007283663,0.011634539],"study_design_scores_gemma":[0.00005827249,0.0002821295,0.003383792,0.000018949835,0.00001428906,0.00049582607,0.00020998162,0.01840731,0.9670553,0.0036303413,0.0064204177,0.000023446923],"about_ca_topic_score_codex":0.0004124763,"about_ca_topic_score_gemma":0.00079247,"teacher_disagreement_score":0.001521155,"about_ca_system_score_codex":0.00033025158,"about_ca_system_score_gemma":0.00011197338,"threshold_uncertainty_score":0.0050887465},"labels":[],"label_agreement":null},{"id":"W2092644958","doi":"10.1016/j.sse.2007.07.013","title":"Electrical characteristics and simulations of self-switching-diodes in SOI technology","year":2007,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"Semiconductor materials and devices","field":"Engineering","cited_by":34,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Université de Sherbrooke","funders":"Natural Sciences and Engineering Research Council of Canada; CMC Microsystems","keywords":"Silicon on insulator; Diode; Materials science; Optoelectronics; Fabrication; Voltage; Thermal; Silicon; Electric field; Engineering physics; Electronic engineering; Electrical engineering; Engineering; Physics","score_opus":0.005221040787323983,"score_gpt":0.24007446980887254,"score_spread":0.23485342902154854,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2092644958","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9250939,0.00032645915,0.013829032,0.0005351086,0.00006686613,0.00004048371,0.0006303046,0.00030255833,0.059175402],"genre_scores_gemma":[0.99522984,0.00008874239,0.0013894426,0.000048743725,0.000010180474,0.000020248106,0.0001476839,0.00005502148,0.0030100935],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99990666,0.00002192974,0.0000032998248,0.000009998239,0.000029086923,0.000029010185],"domain_scores_gemma":[0.99959177,0.00023271408,0.000032688047,0.000035203328,0.00007895642,0.00002863935],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00020232708,0.0002604781,0.00041498552,0.0003462589,0.00035835037,0.000570045,0.00076672377,0.0009786829,0.0041588363],"category_scores_gemma":[0.0008891755,0.0002481111,0.000426111,0.0006751505,0.0004514225,0.0006297427,0.00020761945,0.0004129599,0.00034103176],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00006831108,0.000044214357,0.0009671867,0.000042022668,0.000018556704,0.00009466794,0.00006358318,0.9866166,0.0025763265,0.0069645047,0.000628958,0.0019151202],"study_design_scores_gemma":[0.000013375037,0.000020230846,0.0004257812,0.0000045041224,0.0000056509602,0.00001455941,0.000027752707,0.9966106,0.0010011195,0.0014988778,0.00037228325,0.000005279293],"about_ca_topic_score_codex":0.0059911367,"about_ca_topic_score_gemma":0.0052381433,"teacher_disagreement_score":0.0059911367,"about_ca_system_score_codex":0.0008246145,"about_ca_system_score_gemma":0.00040480032,"threshold_uncertainty_score":0.013912678},"labels":[],"label_agreement":null},{"id":"W2097058694","doi":"10.1016/j.sse.2010.03.017","title":"Large-signal model for AlGaN/GaN HEMTs suitable for RF switching-mode power amplifiers design","year":2010,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":27,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"École de Technologie Supérieure; University of Calgary","funders":"","keywords":"High-electron-mobility transistor; Amplifier; Large-signal model; RF power amplifier; Transistor; Power (physics); Electronic engineering; Mode (computer interface); SIGNAL (programming language); Computer science; Gallium nitride; Materials science; Electrical engineering; Engineering; Bandwidth (computing); Physics; Voltage; Telecommunications; Layer (electronics)","score_opus":0.016135745330308506,"score_gpt":0.2896510784715701,"score_spread":0.27351533314126164,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2097058694","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.07015642,0.0009741756,0.85431004,0.00096958585,0.0001946843,0.00023149977,0.0007245374,0.001180936,0.071258076],"genre_scores_gemma":[0.90630895,0.00090035936,0.054521564,0.00033893893,0.00016245758,0.00029052925,0.0005972062,0.00046940945,0.03641052],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9999137,0.000021556696,0.0000029465816,0.0000148180325,0.000036852107,0.000010126707],"domain_scores_gemma":[0.99990666,0.00003327668,0.0000119186625,0.00001285875,0.000028920962,0.0000063692414],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00016511188,0.00064120186,0.00039691012,0.0002512867,0.00027106827,0.0006782774,0.0011480806,0.000986113,0.0051693567],"category_scores_gemma":[0.00041144388,0.00020442482,0.0004808208,0.00024394099,0.00023050276,0.0008760814,0.00022280477,0.00058946124,0.0014891862],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00020849054,0.00013281705,0.00051871006,0.00033142965,0.000099026816,0.00053102104,0.00021518856,0.6482279,0.21164036,0.11079695,0.0052639763,0.022034101],"study_design_scores_gemma":[0.000008208836,0.00003719377,0.00010832177,0.0000062698973,0.0000109755265,0.000048178787,0.000010064201,0.9904266,0.003591929,0.0036567755,0.002090656,0.000004820271],"about_ca_topic_score_codex":0.0015520015,"about_ca_topic_score_gemma":0.0026394464,"teacher_disagreement_score":0.0051693567,"about_ca_system_score_codex":0.00061924494,"about_ca_system_score_gemma":0.00028246435,"threshold_uncertainty_score":0.017293215},"labels":[],"label_agreement":null},{"id":"W2108852686","doi":"10.1016/j.sse.2012.04.026","title":"Factors for the polarization lifetime in metal–ferroelectric–insulator–semiconductor capacitors","year":2012,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"Ferroelectric and Piezoelectric Materials","field":"Materials Science","cited_by":4,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Geological Survey of Canada","funders":"","keywords":"Capacitor; Ferroelectricity; Materials science; Semiconductor; Polarization (electrochemistry); Insulator (electricity); Optoelectronics; Ferroelectric capacitor; Metal; Electrical engineering; Voltage; Engineering; Metallurgy; Dielectric; Chemistry","score_opus":0.02692157668971335,"score_gpt":0.27566529881474106,"score_spread":0.2487437221250277,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2108852686","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.91682005,0.0034372322,0.053788323,0.0021850003,0.00024402593,0.00008273209,0.0002795264,0.0007378692,0.02242525],"genre_scores_gemma":[0.99596536,0.0002739802,0.001364512,0.00005583412,0.00003311133,0.000014722407,0.00006378962,0.00007865137,0.0021500345],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998267,0.000027414979,0.000006960288,0.000043124634,0.00003823142,0.00005757784],"domain_scores_gemma":[0.9979842,0.0013975338,0.00022682676,0.00010763727,0.00016553098,0.00011827517],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00090325443,0.0005511603,0.00035274922,0.0008528242,0.0007837054,0.00086719607,0.00047961329,0.0008389605,0.0063106557],"category_scores_gemma":[0.0052631237,0.0004495849,0.00026307424,0.0002611679,0.0008259003,0.0016082312,0.0003255013,0.0008123697,0.0005861955],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.001684697,0.00042637103,0.009962228,0.0005307574,0.00008920456,0.0014608279,0.00068810245,0.037919533,0.4930561,0.40784568,0.008707846,0.037628666],"study_design_scores_gemma":[0.00020325529,0.00047331117,0.020941004,0.00025613487,0.00026551515,0.0030211753,0.0007838264,0.35342163,0.38398752,0.2215392,0.014683537,0.00042401574],"about_ca_topic_score_codex":0.00092846534,"about_ca_topic_score_gemma":0.0012304392,"teacher_disagreement_score":0.0063106557,"about_ca_system_score_codex":0.0007954058,"about_ca_system_score_gemma":0.0005350801,"threshold_uncertainty_score":0.02111119},"labels":[],"label_agreement":null},{"id":"W2114574737","doi":"10.1016/j.sse.2005.02.004","title":"Accurate modeling and parameter extraction method for organic TFTs","year":2005,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":153,"is_retracted":false,"has_abstract":false,"route_ca_aff":false,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"","funders":"Consejo Nacional de Ciencia y Tecnología; Generalitat de Catalunya; McMaster University","keywords":"Extraction (chemistry); Thin-film transistor; Materials science; Transistor; Transconductance; Organic semiconductor; Biological system; Computer science; Optoelectronics; Nanotechnology; Electrical engineering; Chromatography; Chemistry","score_opus":0.014231714339791396,"score_gpt":0.2838989474016144,"score_spread":0.26966723306182305,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2114574737","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.013122438,0.00037811545,0.98212403,0.00009581313,0.000038388258,0.000031573556,0.00023292706,0.0014298283,0.002546997],"genre_scores_gemma":[0.6609908,0.0012652096,0.32381558,0.000091678914,0.000066540786,0.00029348728,0.0008416185,0.00061847136,0.012016692],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9998323,0.000019649971,0.0000075319817,0.000021602069,0.00010465816,0.000014285476],"domain_scores_gemma":[0.9998079,0.000060983337,0.000017487157,0.000043433287,0.00006567989,0.0000045720453],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0002019992,0.0006236783,0.00048334524,0.00039382066,0.00033370225,0.00049096806,0.00095473893,0.0006918214,0.0020823027],"category_scores_gemma":[0.00089098874,0.00037779237,0.00044862853,0.00044934885,0.00016323388,0.0010854376,0.0002227143,0.0006009237,0.001151122],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00007938746,0.000039808765,0.00055735715,0.00022726272,0.00007550875,0.00019472935,0.00014631878,0.7446001,0.11541648,0.012866381,0.003237555,0.122559085],"study_design_scores_gemma":[0.0000060945545,0.000021386912,0.00017723789,0.000009515634,0.000015710399,0.00006291684,0.000012008302,0.9669086,0.02529071,0.0021849298,0.005299252,0.0000116614],"about_ca_topic_score_codex":0.004124027,"about_ca_topic_score_gemma":0.004439041,"teacher_disagreement_score":0.004124027,"about_ca_system_score_codex":0.00064112915,"about_ca_system_score_gemma":0.0006719621,"threshold_uncertainty_score":0.008200049},"labels":[],"label_agreement":null},{"id":"W2115856956","doi":"10.1016/j.sse.2006.04.017","title":"Monitoring the self-heating in a high frequency GaN HFET","year":2006,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":1,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Institute for Microstructural Sciences","funders":"","keywords":"Materials science; Optoelectronics","score_opus":0.006914204277505058,"score_gpt":0.24263794394562396,"score_spread":0.2357237396681189,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2115856956","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99709535,0.000104284416,0.0016350013,0.000059034253,0.000020681888,0.00000982138,0.00012012064,0.000087352535,0.0008683355],"genre_scores_gemma":[0.9986091,0.00003927165,0.0004468354,0.000027276092,0.000009380252,0.000005494512,0.00006090906,0.000012797587,0.00078895927],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998772,0.000010994677,0.0000034211787,0.00003669873,0.000033741486,0.000037840244],"domain_scores_gemma":[0.9997826,0.00010850052,0.000033819608,0.000019518575,0.000031088024,0.000024384031],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00016349199,0.00016767783,0.00024057657,0.00025538745,0.00031025978,0.00034218625,0.0004128721,0.00044405242,0.0017663495],"category_scores_gemma":[0.00026141977,0.00013039363,0.00014489098,0.00018779725,0.0004184864,0.00041032635,0.0001838545,0.0003997026,0.00015286598],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0005945378,0.00006400216,0.004067676,0.000048156166,0.00003043002,0.00025348135,0.00016257077,0.00068594207,0.9898454,0.00018672689,0.00027330397,0.003787707],"study_design_scores_gemma":[0.000033591306,0.00051840884,0.031246178,0.000010325573,0.0000337213,0.00034762826,0.00015592272,0.011183191,0.9551459,0.00011043194,0.0011990892,0.000015639802],"about_ca_topic_score_codex":0.00090017647,"about_ca_topic_score_gemma":0.001013842,"teacher_disagreement_score":0.0017663495,"about_ca_system_score_codex":0.000372478,"about_ca_system_score_gemma":0.000120901284,"threshold_uncertainty_score":0.0059090257},"labels":[],"label_agreement":null},{"id":"W2131132315","doi":"10.1016/j.sse.2004.05.033","title":"Degradation and recovery of SiGe HBTs following radiation and hot-carrier stressing","year":2004,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"Semiconductor materials and devices","field":"Engineering","cited_by":5,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"ON Semiconductor (Canada); National Research Council Canada; Institute for Microstructural Sciences","funders":"","keywords":"Materials science; Degradation (telecommunications); Irradiation; Optoelectronics; Radiation; Stress (linguistics); Radiation damage; Composite material; Electrical engineering; Optics","score_opus":0.006264558053931052,"score_gpt":0.22306427755740066,"score_spread":0.2167997195034696,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2131132315","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9986206,0.00062957883,0.00021384815,0.00002227977,0.000009891831,0.0000038228604,0.00014766846,0.000016507474,0.00033570713],"genre_scores_gemma":[0.99885404,0.00014200677,0.0000780856,0.0000129558775,0.000004017622,0.0000035429364,0.00019764823,0.00000610885,0.0007015862],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998411,0.000020348209,0.000012694179,0.000024170042,0.00003735117,0.000064318054],"domain_scores_gemma":[0.9995937,0.00013713184,0.00006559109,0.000067384906,0.00009879045,0.00003754257],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00027172136,0.00019375204,0.00033069076,0.0003445502,0.00026039788,0.00036940188,0.00031358117,0.0005319968,0.0017949808],"category_scores_gemma":[0.0006726265,0.00013012969,0.0003857825,0.00047157044,0.00040748413,0.00049365155,0.00013249819,0.00034265194,0.0003423251],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0026675246,0.0001447926,0.0040893303,0.000074795586,0.000055239667,0.00033875514,0.00024584783,0.0009090166,0.98481005,0.000117019685,0.00015631288,0.0063912496],"study_design_scores_gemma":[0.00004980513,0.0019550405,0.077687666,0.00001444064,0.00009101012,0.0006310725,0.00030578813,0.004450511,0.9137933,0.00015394053,0.0008434285,0.00002407739],"about_ca_topic_score_codex":0.0019152927,"about_ca_topic_score_gemma":0.0013563714,"teacher_disagreement_score":0.0019152927,"about_ca_system_score_codex":0.0002431969,"about_ca_system_score_gemma":0.00015745757,"threshold_uncertainty_score":0.00600487},"labels":[],"label_agreement":null},{"id":"W2620552952","doi":"10.1016/j.sse.2017.05.008","title":"Submillimeter wave GaAs Schottky diode application based study and optimization for 0.1–1.5 THz","year":2017,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"Superconducting and THz Device Technology","field":"Physics and Astronomy","cited_by":12,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"École de Technologie Supérieure; Université de Sherbrooke","funders":"","keywords":"Schottky diode; Parasitic capacitance; Terahertz radiation; Capacitance; Materials science; Optoelectronics; Diode; Microfabrication; Varicap; Diffusion capacitance; Parasitic extraction; Anode; Physics; Fabrication; Electrode","score_opus":0.0182920698491119,"score_gpt":0.2902405039943199,"score_spread":0.271948434145208,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2620552952","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9697673,0.0016574044,0.010206157,0.00031427975,0.000041332907,0.000049245475,0.00035174473,0.00013889869,0.017473614],"genre_scores_gemma":[0.9845769,0.0006558682,0.005684008,0.000039455448,0.000010173841,0.000036411242,0.00019842843,0.000050020553,0.008748672],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99985766,0.000011661787,0.0000041501194,0.000025258016,0.00007160462,0.000029547022],"domain_scores_gemma":[0.99987376,0.000028267406,0.000024595362,0.000014321755,0.000050026178,0.000008965556],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00015516454,0.0002904739,0.00023395463,0.00022296736,0.00029391653,0.0005526683,0.00032269573,0.00033903876,0.0025341082],"category_scores_gemma":[0.00020860444,0.00016527931,0.0003155861,0.00041090438,0.00013965898,0.00033452566,0.00024341892,0.00022110289,0.00052491674],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00009676455,0.000051590636,0.0030020692,0.00015519366,0.000026174848,0.000090717425,0.000099374345,0.007828099,0.9758119,0.0017187583,0.00079174736,0.010327637],"study_design_scores_gemma":[0.000026423411,0.00067854597,0.02039981,0.000031365416,0.00007761668,0.00026016173,0.0003183748,0.06963955,0.88835007,0.00078616536,0.019395113,0.00003676762],"about_ca_topic_score_codex":0.0019680022,"about_ca_topic_score_gemma":0.0063082306,"teacher_disagreement_score":0.0025341082,"about_ca_system_score_codex":0.00059066905,"about_ca_system_score_gemma":0.0005097249,"threshold_uncertainty_score":0.008477509},"labels":[],"label_agreement":null},{"id":"W2766496230","doi":"10.1016/j.sse.2017.10.023","title":"TiOx-based thin-film transistors prepared by femtosecond laser pre-annealing","year":2017,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":false,"route_ca_aff":false,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"","funders":"Institute for Information and Communications Technology Promotion; Information Technology Research Centre; Ministry of Trade, Industry and Energy; Ministry of Education and Human Resources Development; Korea Institute of Energy Technology Evaluation and Planning; Ministry of Education; Ministry of Science, ICT and Future Planning; National Research Foundation of Korea","keywords":"Materials science; Thin-film transistor; Femtosecond; Annealing (glass); Optoelectronics; Amorphous solid; Semiconductor; Laser; Thin film; Transistor; Nanotechnology; Optics; Layer (electronics); Composite material; Crystallography; Electrical engineering","score_opus":0.006940705987001145,"score_gpt":0.2320266925190488,"score_spread":0.22508598653204767,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2766496230","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9945957,0.0006755501,0.0019006779,0.00009473894,0.00007433336,0.00003270919,0.00026076788,0.00009348564,0.0022720916],"genre_scores_gemma":[0.9901931,0.00073158374,0.003939951,0.000032610147,0.000015921318,0.0000532959,0.0002838348,0.000041591127,0.00470798],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.999946,0.0000021124906,0.0000033614933,0.000015798641,0.00001831469,0.000014426151],"domain_scores_gemma":[0.99995387,0.000010856417,0.000010316764,0.000007639333,0.00001181399,0.0000054223133],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0000896124,0.00023932355,0.00024696972,0.00017583424,0.0002663006,0.00033975788,0.0003090211,0.0003179489,0.0020947084],"category_scores_gemma":[0.00019081462,0.00020158033,0.00013139263,0.00018317366,0.00018375111,0.00033525485,0.0001161527,0.00042073842,0.00032618723],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00001907185,0.0000034054883,0.000040612373,0.000033522163,0.0000024431179,0.000026599697,0.000016438265,0.00002534622,0.9993766,0.00008790135,0.000035883215,0.00033214904],"study_design_scores_gemma":[0.0000062828744,0.000044360553,0.0012420461,0.0000048789934,0.0000084383255,0.00004373583,0.000022358257,0.000357675,0.99739146,0.0000319095,0.0008436784,0.0000031066138],"about_ca_topic_score_codex":0.0012508526,"about_ca_topic_score_gemma":0.0033496816,"teacher_disagreement_score":0.0020947084,"about_ca_system_score_codex":0.00032157998,"about_ca_system_score_gemma":0.00025275457,"threshold_uncertainty_score":0.0070075393},"labels":[],"label_agreement":null},{"id":"W2899193540","doi":"10.1016/j.sse.2019.03.002","title":"Electronic structure, magnetoexcitons and valley polarized electron gas in 2D crystals","year":2019,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"2D Materials and Applications","field":"Materials Science","cited_by":6,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Ottawa","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Zeeman effect; Landau quantization; Condensed matter physics; Exciton; Physics; Dirac fermion; Monolayer; Electron; Fermi gas; Magnetic field; Point reflection; Electronic structure; Band gap; Graphene; Materials science; Quantum mechanics; Nanotechnology","score_opus":0.004269916361686346,"score_gpt":0.23982649200980025,"score_spread":0.2355565756481139,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2899193540","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9804894,0.00090342533,0.0037254037,0.0006053014,0.00007348064,0.000009490306,0.00012271611,0.000045798322,0.014024944],"genre_scores_gemma":[0.9932029,0.00031659516,0.0024200133,0.00010009992,0.000050089806,0.000026729853,0.00013551956,0.000018912611,0.0037291204],"study_design_codex":"theoretical_or_conceptual","study_design_gemma":"theoretical_or_conceptual","domain_scores_codex":[0.99993956,0.000012099007,0.000002115235,0.000011311174,0.000018480356,0.000016447635],"domain_scores_gemma":[0.99992824,0.000025990768,0.000013825304,0.000008523502,0.000010646782,0.000012865382],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00015288666,0.0001797803,0.00029522524,0.00045803603,0.00061626255,0.00093845703,0.00047797392,0.0006686166,0.0019080898],"category_scores_gemma":[0.00027303802,0.00023948104,0.0001063898,0.0004359259,0.0010150084,0.00047515787,0.00038094912,0.00040943513,0.00015005574],"study_design_candidate":"theoretical_or_conceptual","study_design_consensus":"theoretical_or_conceptual","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0006792595,0.00033967136,0.006656915,0.00040284614,0.000053894764,0.0012911734,0.000687972,0.03666634,0.32780036,0.6035923,0.006029852,0.015799493],"study_design_scores_gemma":[0.00032277877,0.0003871207,0.022176081,0.00010848389,0.000032062337,0.0011731826,0.000866507,0.63088244,0.06380912,0.27097294,0.0091136545,0.00015555139],"about_ca_topic_score_codex":0.00064617617,"about_ca_topic_score_gemma":0.0011327902,"teacher_disagreement_score":0.0019080898,"about_ca_system_score_codex":0.00038278167,"about_ca_system_score_gemma":0.00024398284,"threshold_uncertainty_score":0.0063831806},"labels":[],"label_agreement":null},{"id":"W2964245630","doi":"10.1016/j.sse.2015.05.042","title":"Efficiency analysis of betavoltaic elements","year":2015,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"Advanced Energy Technologies and Civil Engineering Innovations","field":"Energy","cited_by":28,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Ontario Tech University","funders":"","keywords":"Electron; Atomic physics; Flux (metallurgy); Range (aeronautics); Energy conversion efficiency; Diffusion; Plasma; Physics; Materials science; Nuclear physics; Optoelectronics","score_opus":0.014083967746901987,"score_gpt":0.2698898730591942,"score_spread":0.2558059053122922,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2964245630","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.58519274,0.002204644,0.26456675,0.00023771562,0.0000632355,0.00009509509,0.00044962793,0.0010175662,0.14617269],"genre_scores_gemma":[0.97334325,0.0002395439,0.0076497803,0.000030914594,0.0000067865676,0.000025054103,0.0002198887,0.00013583651,0.018348908],"study_design_codex":"simulation_or_modeling","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99975663,0.000029322204,0.000006833065,0.000035605826,0.00012979667,0.00004189003],"domain_scores_gemma":[0.99973875,0.0000891078,0.000025753787,0.000035455825,0.00010190396,0.000009006025],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00031557586,0.00032811784,0.0003671434,0.00078134635,0.00031045507,0.0007485817,0.00084088015,0.00038000027,0.006504531],"category_scores_gemma":[0.0006968915,0.00019980702,0.000350207,0.0007510168,0.00027171877,0.0005023166,0.00024269678,0.00018072507,0.0018054224],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0011751571,0.00022610718,0.009929798,0.000584998,0.00018914019,0.00032751024,0.0002968105,0.46131548,0.26562876,0.12755364,0.003964662,0.12880796],"study_design_scores_gemma":[0.000038837363,0.00047249073,0.006706139,0.00004990299,0.00008521895,0.00031093592,0.00013840279,0.74295855,0.22259253,0.009335678,0.017289612,0.000021639145],"about_ca_topic_score_codex":0.00094261684,"about_ca_topic_score_gemma":0.000997186,"teacher_disagreement_score":0.006504531,"about_ca_system_score_codex":0.00088651717,"about_ca_system_score_gemma":0.00021214069,"threshold_uncertainty_score":0.021759868},"labels":[],"label_agreement":null},{"id":"W2969451192","doi":"10.1016/j.sse.2019.107634","title":"Optimization of deep well gate-controlled dual direction SCR device for ESD protection in 0.5 μm CMOS process","year":2019,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"Electrostatic Discharge in Electronics","field":"Engineering","cited_by":6,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Western University","funders":"Hunan Normal University; National Natural Science Foundation of China","keywords":"Electrostatic discharge; CMOS; Voltage; Electrical engineering; Anode; Chip; Materials science; Optoelectronics; Electrode; Engineering; Chemistry","score_opus":0.005007177058613267,"score_gpt":0.2350283304862418,"score_spread":0.23002115342762855,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2969451192","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.98044246,0.001247896,0.012093075,0.00017876997,0.000098504024,0.000046091183,0.0003486469,0.00029792314,0.0052465433],"genre_scores_gemma":[0.99106467,0.00021785201,0.006686981,0.000033024597,0.000012778061,0.000013176177,0.000108490625,0.000020651252,0.0018424483],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99988663,0.0000068018862,0.0000051690777,0.000034814148,0.000047011992,0.000019610956],"domain_scores_gemma":[0.9998685,0.000014366823,0.00004657679,0.000010392182,0.00004492127,0.000015120392],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00010399345,0.00032068815,0.00032447022,0.00013554897,0.00017736522,0.0004628003,0.00060352753,0.00030961385,0.0009668483],"category_scores_gemma":[0.00016604117,0.0001383894,0.00020261781,0.00017278033,0.00009859184,0.00023546742,0.00014204762,0.00013887243,0.00031266233],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00010381451,0.000035910773,0.00046735938,0.00013808424,0.000019046369,0.00016303555,0.000033774842,0.0026081013,0.9918142,0.00044369863,0.00048007624,0.0036928286],"study_design_scores_gemma":[0.00012601486,0.0016610081,0.007419015,0.000039374685,0.00011052132,0.0006500235,0.00010128079,0.06004633,0.92419463,0.00035512765,0.0052528153,0.000043844404],"about_ca_topic_score_codex":0.00082315196,"about_ca_topic_score_gemma":0.0024933703,"teacher_disagreement_score":0.0009668483,"about_ca_system_score_codex":0.00045699062,"about_ca_system_score_gemma":0.00040856528,"threshold_uncertainty_score":0.0033156872},"labels":[],"label_agreement":null},{"id":"W2990340554","doi":"10.1016/j.sse.2019.107737","title":"In-situ heater for thermal assist recovery of MOS devices in 28 nm UTBB FD-SOI CMOS technology","year":2019,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"Semiconductor materials and devices","field":"Engineering","cited_by":4,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Institut interdisciplinaire d'innovation technologique; Université de Sherbrooke","funders":"","keywords":"Wafer; Materials science; NMOS logic; CMOS; Optoelectronics; Silicon on insulator; Thermal; Transistor; Gate oxide; Resistor; Oxide; Silicon; Electrical engineering; Electronic engineering; Voltage; Engineering","score_opus":0.006022375635875895,"score_gpt":0.23245033251071184,"score_spread":0.22642795687483594,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2990340554","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9848156,0.000628233,0.010105112,0.00035923152,0.00014788892,0.000031520565,0.000260167,0.00042604175,0.0032261596],"genre_scores_gemma":[0.9939838,0.000114418166,0.0027844333,0.000041236206,0.000015799382,0.000010157669,0.00004089724,0.00002106535,0.002988218],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9999236,0.000005309254,0.000002334358,0.000021521824,0.000026416361,0.000020716552],"domain_scores_gemma":[0.99990964,0.000018872934,0.000022584843,0.00001469764,0.000024748124,0.000009439793],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00008867944,0.00018160605,0.0002368603,0.000102783684,0.0002918708,0.00025269506,0.00055250997,0.00022084796,0.0022708727],"category_scores_gemma":[0.00015836055,0.00010007755,0.00012204558,0.00009422053,0.00018406796,0.00047562033,0.0002302012,0.0002937868,0.0003150462],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00019657785,0.00003717449,0.00042319167,0.00008559422,0.0000080090595,0.0000743932,0.00015199606,0.0005170242,0.99151856,0.00043119033,0.00078629574,0.0057699066],"study_design_scores_gemma":[0.000014499751,0.00021192164,0.0018384313,0.000009726979,0.000013230243,0.00009885326,0.00009774763,0.008607905,0.9861356,0.00011653328,0.0028462384,0.000009277699],"about_ca_topic_score_codex":0.0006179941,"about_ca_topic_score_gemma":0.0021429658,"teacher_disagreement_score":0.0022708727,"about_ca_system_score_codex":0.0003679519,"about_ca_system_score_gemma":0.00023093855,"threshold_uncertainty_score":0.0075968504},"labels":[],"label_agreement":null},{"id":"W2992230486","doi":"10.1016/j.sse.2019.107728","title":"Optimization of GaAs/AlGaAs staircase avalanche photodiodes accounting for both electron and hole impact ionization","year":2019,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"Radiation Detection and Scintillator Technologies","field":"Physics and Astronomy","cited_by":5,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Saskatchewan","funders":"Ministero dell’Istruzione, dell’Università e della Ricerca","keywords":"Avalanche photodiode; Impact ionization; Heterojunction; Avalanche diode; Optoelectronics; Photodiode; Noise (video); Ionization; Electron; Physics; Avalanche breakdown; Materials science; Breakdown voltage; Optics; Voltage; Computer science; Nuclear physics; Quantum mechanics","score_opus":0.00527627793601455,"score_gpt":0.2597609331708716,"score_spread":0.2544846552348571,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2992230486","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9562159,0.0015136045,0.034459423,0.00029028123,0.0000574887,0.00019594411,0.00053708453,0.0005509142,0.006179345],"genre_scores_gemma":[0.97023815,0.00055987696,0.025579875,0.00004882638,0.000007741681,0.00012636717,0.0003162901,0.000097492564,0.0030254875],"study_design_codex":"bench_or_experimental","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99971455,0.000030396544,0.000019227089,0.0000744397,0.00010322123,0.00005814373],"domain_scores_gemma":[0.99956113,0.00013634392,0.00009427108,0.000031946238,0.00014347547,0.000032895947],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00043375036,0.0010537128,0.0005406221,0.00035284404,0.0004810663,0.0014761181,0.00075927976,0.00069300184,0.0017877801],"category_scores_gemma":[0.0008099141,0.0004393164,0.00040886,0.0006078459,0.00018200146,0.0006524359,0.00037312254,0.00037139675,0.00051646127],"study_design_candidate":"simulation_or_modeling","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0004621776,0.00016925683,0.0023053389,0.00027621342,0.00012754215,0.00012663365,0.00010766153,0.04984364,0.92801386,0.0020884771,0.0005162793,0.015962776],"study_design_scores_gemma":[0.000119035205,0.0008777068,0.006552927,0.000033615917,0.00015987856,0.00014986223,0.00014180216,0.14709972,0.83886355,0.00082940987,0.0051242393,0.000048305374],"about_ca_topic_score_codex":0.0030074997,"about_ca_topic_score_gemma":0.0077672037,"teacher_disagreement_score":0.0030074997,"about_ca_system_score_codex":0.0025716166,"about_ca_system_score_gemma":0.0015446388,"threshold_uncertainty_score":0.01865846},"labels":[],"label_agreement":null},{"id":"W3045366189","doi":"10.1016/j.sse.2020.107869","title":"New accurate approximation of the Einstein Relation for heavily-doped semiconductor devices","year":2020,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"Advanced Materials and Semiconductor Technologies","field":"Materials Science","cited_by":3,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Einstein relation; Einstein; Degeneracy (biology); Doping; Relation (database); Semiconductor; Scaling; Physics; Quality (philosophy); Fermi Gamma-ray Space Telescope; Constant (computer programming); Condensed matter physics; Theoretical physics; Statistical physics; Quantum mechanics; Mathematics; Computer science; Geometry; Data mining; Bioinformatics","score_opus":0.029004150118666385,"score_gpt":0.2793643605244826,"score_spread":0.25036021040581624,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3045366189","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.024772944,0.006021896,0.83357203,0.0017764263,0.0019314176,0.00017180046,0.00032577926,0.0010479876,0.13037978],"genre_scores_gemma":[0.47318557,0.0065873945,0.39076984,0.0030785762,0.0015543731,0.000559956,0.0009236781,0.0015176263,0.12182301],"study_design_codex":"theoretical_or_conceptual","study_design_gemma":"theoretical_or_conceptual","domain_scores_codex":[0.99897206,0.00024433708,0.00006343762,0.00011110993,0.000499045,0.00010995924],"domain_scores_gemma":[0.9992501,0.00022945397,0.00004267424,0.00021390399,0.00021329348,0.00005052057],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0012044304,0.0012246356,0.0017548034,0.0016524941,0.0012115315,0.0022129314,0.002671509,0.0022697193,0.0065603605],"category_scores_gemma":[0.0036283883,0.0006082382,0.0009492963,0.0014185132,0.0012570615,0.0040559247,0.0016201749,0.0025301762,0.0026481068],"study_design_candidate":"theoretical_or_conceptual","study_design_consensus":"theoretical_or_conceptual","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000029482862,0.00003603136,0.00025483253,0.00011698682,0.000026460903,0.00015239429,0.00012503471,0.022840127,0.0037368953,0.9539668,0.005117492,0.013597473],"study_design_scores_gemma":[0.000017802835,0.00001507316,0.00028393866,0.000057222423,0.00002573644,0.00017786687,0.000035372865,0.6547796,0.0024438428,0.32315618,0.018959945,0.00004743218],"about_ca_topic_score_codex":0.0028262658,"about_ca_topic_score_gemma":0.006281768,"teacher_disagreement_score":0.0065603605,"about_ca_system_score_codex":0.0016086441,"about_ca_system_score_gemma":0.0012402259,"threshold_uncertainty_score":0.02194655},"labels":[],"label_agreement":null},{"id":"W3172281394","doi":"10.1016/j.sse.2021.108122","title":"Modeling current and voltage peaks generation in complementary resistive switching devices","year":2021,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"Advanced Memory and Neural Computing","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Institut interdisciplinaire d'innovation technologique; Université de Sherbrooke","funders":"","keywords":"Joule heating; Electromigration; Resistive random-access memory; Resistive touchscreen; Materials science; Voltage; Current (fluid); Coupling (piping); Optoelectronics; Electrical engineering; Engineering","score_opus":0.025775552069748835,"score_gpt":0.2871871212384757,"score_spread":0.2614115691687268,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3172281394","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.69479793,0.0009805862,0.2330703,0.00064575375,0.00018033873,0.000094531075,0.00020470459,0.00081304763,0.06921288],"genre_scores_gemma":[0.99081296,0.00011370845,0.0038061908,0.00003429491,0.000020491007,0.000016500573,0.000031339114,0.00003827282,0.005126266],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99993837,0.00001018039,0.0000018992291,0.000009592621,0.000022632948,0.000017266437],"domain_scores_gemma":[0.9998066,0.00011328037,0.000018532164,0.000017103399,0.000030837567,0.000013682353],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0001582247,0.00029682348,0.00022926023,0.00029856642,0.00024944244,0.00056745386,0.0009169268,0.0008542121,0.0022756627],"category_scores_gemma":[0.00062875374,0.0002003515,0.00037740957,0.00029509354,0.0003338547,0.0007378208,0.00021302747,0.00033397437,0.00033160503],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00013621838,0.00012775378,0.0008265242,0.00008055485,0.000030489506,0.00027572166,0.00011008212,0.9145734,0.026226858,0.043401062,0.0010007867,0.013210535],"study_design_scores_gemma":[0.000001605158,0.0000069088464,0.00006560496,0.0000014766257,0.000002500973,0.000009865021,0.00000458088,0.99724555,0.0011726705,0.0013678701,0.00011992054,0.000001493788],"about_ca_topic_score_codex":0.0026427447,"about_ca_topic_score_gemma":0.002772265,"teacher_disagreement_score":0.0026427447,"about_ca_system_score_codex":0.0007605553,"about_ca_system_score_gemma":0.00035619488,"threshold_uncertainty_score":0.007612884},"labels":[],"label_agreement":null},{"id":"W4285605754","doi":"10.1016/j.sse.2022.108420","title":"Modeling of forward gate leakage current for normally off pGaN/AlGaN/GaN HEMTs","year":2022,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":9,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McMaster University","funders":"","keywords":"Materials science; Optoelectronics; Leakage (economics); High-electron-mobility transistor; Electrical engineering; Electronic engineering; Transistor; Engineering; Voltage","score_opus":0.014534458245876689,"score_gpt":0.2737827176893747,"score_spread":0.259248259443498,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4285605754","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.7161469,0.0024313997,0.17006183,0.0008665352,0.00026932664,0.00019725456,0.002108384,0.0017842173,0.10613421],"genre_scores_gemma":[0.9844253,0.00031081817,0.0037927753,0.000072244344,0.000024052539,0.000034411543,0.00018597968,0.0001142853,0.011040137],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99988544,0.000017111077,0.0000036341155,0.000019613757,0.000045872344,0.000028339728],"domain_scores_gemma":[0.99985325,0.000046666115,0.000023973782,0.000015364085,0.000049654318,0.000011060817],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00015026277,0.0006258684,0.0004720814,0.00033114254,0.00030026518,0.0007126555,0.001206229,0.0009233139,0.0022420732],"category_scores_gemma":[0.00039342907,0.00027798113,0.0007172962,0.00031595008,0.00028134708,0.0007176388,0.00021552117,0.00033226516,0.0005783477],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00011295838,0.00005636337,0.0013342634,0.00012856493,0.00006351795,0.0003939707,0.00011041328,0.9515427,0.03381035,0.00534487,0.0011798956,0.0059222155],"study_design_scores_gemma":[0.0000044977337,0.00003408949,0.0003897834,0.000011774857,0.000013748582,0.000042405074,0.000015510723,0.99381423,0.0042985375,0.0006909155,0.00067811477,0.000006296505],"about_ca_topic_score_codex":0.013873718,"about_ca_topic_score_gemma":0.011409117,"teacher_disagreement_score":0.013873718,"about_ca_system_score_codex":0.0018218325,"about_ca_system_score_gemma":0.0008556324,"threshold_uncertainty_score":0.027585924},"labels":[],"label_agreement":null},{"id":"W4293032730","doi":"10.1016/j.sse.2022.108438","title":"Tunneling leakage in ultrashort-channel MOSFETs—From atomistics to continuum modeling","year":2022,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"Semiconductor materials and devices","field":"Engineering","cited_by":3,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McGill University; Nanoacademic Technologies","funders":"National Research Council Canada; Natural Sciences and Engineering Research Council of Canada; Fonds de recherche du Québec – Nature et technologies; Alliance de recherche numérique du Canada","keywords":"Leakage (economics); Quantum tunnelling; Optoelectronics; Materials science; Physics","score_opus":0.010732386563883298,"score_gpt":0.22467900709717606,"score_spread":0.21394662053329278,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4293032730","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.5846656,0.013422426,0.32595643,0.004564392,0.0006918724,0.0001727155,0.00029782183,0.0011117338,0.06911694],"genre_scores_gemma":[0.98814875,0.0012650449,0.004384205,0.00020800698,0.00007890734,0.00002970703,0.000031258216,0.00006854353,0.0057855756],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99981993,0.000055406028,0.0000063068874,0.000018266177,0.000060690676,0.000039431845],"domain_scores_gemma":[0.9997156,0.0001381735,0.000043220174,0.000030346004,0.000045113422,0.000027356255],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00053469464,0.00057387527,0.0007064137,0.0007573727,0.0005007581,0.0010979474,0.0014797766,0.0012710782,0.0012119013],"category_scores_gemma":[0.0014474881,0.00041027885,0.0005994141,0.00048151356,0.0016424037,0.0017421591,0.00077659445,0.0007941021,0.00029772136],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00034908453,0.00017360877,0.0012067198,0.00025501492,0.000082189494,0.0006041931,0.00034368935,0.64072585,0.015555288,0.32887527,0.0022803724,0.009548762],"study_design_scores_gemma":[0.000005852575,0.000016734431,0.00012320155,0.000013040274,0.0000062256977,0.000040224295,0.000016150327,0.97958994,0.00045163927,0.019469755,0.00026063813,0.00000653884],"about_ca_topic_score_codex":0.0027482023,"about_ca_topic_score_gemma":0.0019579234,"teacher_disagreement_score":0.0027482023,"about_ca_system_score_codex":0.0011708088,"about_ca_system_score_gemma":0.0005973821,"threshold_uncertainty_score":0.008494914},"labels":[],"label_agreement":null},{"id":"W4308344324","doi":"10.1016/j.sse.2022.108506","title":"An atomistic modeling framework for valence change memory cells","year":2022,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"Advanced Memory and Neural Computing","field":"Engineering","cited_by":5,"is_retracted":false,"has_abstract":false,"route_ca_aff":false,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"","funders":"Natural Sciences and Engineering Research Council of Canada; National Supercomputing Center, Korea Institute of Science and Technology Information; Schweizerischer Nationalfonds zur Förderung der Wissenschaftlichen Forschung; Werner Siemens-Stiftung","keywords":"Conductance; Quantum tunnelling; Valence (chemistry); Materials science; Resistive random-access memory; Ab initio; Tin; Hysteresis; Condensed matter physics; Kinetic Monte Carlo; Diffusion; Chemical physics; Electrode; Monte Carlo method; Nanotechnology; Chemistry; Optoelectronics; Physics; Thermodynamics","score_opus":0.02973627216023445,"score_gpt":0.2876106646047166,"score_spread":0.2578743924444822,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4308344324","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.059196603,0.0012830605,0.86348957,0.0015206591,0.00034431505,0.00016828782,0.0006922097,0.00046428086,0.072840884],"genre_scores_gemma":[0.79595447,0.0017695205,0.16345242,0.00074003206,0.00016527117,0.00059176795,0.0006208699,0.00043037953,0.036275264],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9999018,0.000022615272,0.000003914033,0.000007823339,0.000045770536,0.000018019911],"domain_scores_gemma":[0.99989116,0.000032813106,0.000007725523,0.000018563203,0.000035805508,0.000013916488],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00028182924,0.00037892445,0.00082633167,0.00042174532,0.00077305734,0.0010728181,0.0026710723,0.0014206418,0.0047346316],"category_scores_gemma":[0.00058973045,0.00031536474,0.00069862476,0.00069815613,0.0005538764,0.0009994484,0.0007184209,0.000799608,0.00085687294],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000018387296,0.000034727233,0.00014404324,0.000042740165,0.000021943588,0.000102927355,0.00005036397,0.81235415,0.0022628629,0.17895521,0.0012655399,0.0047471123],"study_design_scores_gemma":[0.0000048305333,0.0000057419825,0.00002509361,0.000004062274,0.0000038425787,0.000013428683,0.000010475238,0.98012644,0.00015144357,0.018191613,0.00145803,0.0000049464725],"about_ca_topic_score_codex":0.009668901,"about_ca_topic_score_gemma":0.009759459,"teacher_disagreement_score":0.009668901,"about_ca_system_score_codex":0.0009254594,"about_ca_system_score_gemma":0.0011621636,"threshold_uncertainty_score":0.01922524},"labels":[],"label_agreement":null},{"id":"W4323364508","doi":"10.1016/j.sse.2023.108626","title":"Understanding conditions for the single electron regime in 28 nm FD-SOI quantum dots: Interpretation of experimental data with 3D quantum TCAD simulations","year":2023,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"Quantum and electron transport phenomena","field":"Physics and Astronomy","cited_by":6,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Nanoacademic Technologies; Institut quantique; Université de Sherbrooke","funders":"Natural Sciences and Engineering Research Council of Canada; Canada First Research Excellence Fund","keywords":"Quantum dot; Silicon on insulator; Electron; Quantum; Optoelectronics; Silicon; Materials science; Quantum computer; Nanotechnology; Physics; Quantum mechanics","score_opus":0.056515946174623216,"score_gpt":0.31763970054148466,"score_spread":0.2611237543668614,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4323364508","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9672172,0.0004619944,0.019637434,0.000920645,0.000068119996,0.0000968234,0.0011125733,0.00027190582,0.010213398],"genre_scores_gemma":[0.9972939,0.00010849747,0.0021060414,0.000032698143,0.0000046444475,0.00003235979,0.00012276565,0.000024829671,0.00027421457],"study_design_codex":"bench_or_experimental","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.999856,0.000011388038,0.000010280114,0.000033721022,0.00005145207,0.00003710986],"domain_scores_gemma":[0.9995567,0.00023461561,0.000051210583,0.00006157414,0.000064343374,0.000031500982],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0005096243,0.00024704813,0.00046815892,0.00039749552,0.0007309369,0.00086941756,0.00083504734,0.0010035884,0.003842712],"category_scores_gemma":[0.0015530038,0.00037750168,0.00029741836,0.0002456527,0.0010555786,0.0016654434,0.0003896928,0.0009527989,0.00035266683],"study_design_candidate":"simulation_or_modeling","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00075839023,0.0004144751,0.010367362,0.00071424444,0.00006261519,0.0012038166,0.0013315914,0.2757813,0.5375637,0.16028632,0.0037076732,0.007808588],"study_design_scores_gemma":[0.00006255572,0.00006898838,0.006228449,0.00006210668,0.000017659364,0.00008339311,0.0003975512,0.8840436,0.083444566,0.023723027,0.0018172151,0.000050877523],"about_ca_topic_score_codex":0.008104352,"about_ca_topic_score_gemma":0.0075402656,"teacher_disagreement_score":0.008104352,"about_ca_system_score_codex":0.0014389778,"about_ca_system_score_gemma":0.00083188526,"threshold_uncertainty_score":0.016114354},"labels":[],"label_agreement":null},{"id":"W4386696993","doi":"10.1016/j.sse.2023.108777","title":"Simulation process flow for the implementation of industry-standard FD-SOI quantum dot devices","year":2023,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":5,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Nanoacademic Technologies; Institut quantique; Université de Sherbrooke","funders":"Natural Sciences and Engineering Research Council of Canada; Canada First Research Excellence Fund","keywords":"Silicon on insulator; Quantum dot; Qubit; Fabrication; Optoelectronics; Process (computing); Quantum dot laser; Semiconductor device fabrication; Quantum computer; Flow (mathematics); Semiconductor; Materials science; Quantum; Silicon; Computer science; Electronic engineering; Physics; Nanotechnology; Engineering; Quantum mechanics; Mechanics","score_opus":0.023649902550605388,"score_gpt":0.3427472080202253,"score_spread":0.3190973054696199,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4386696993","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.22817679,0.00015401846,0.71652377,0.0005398542,0.00015837287,0.00036292765,0.0023415228,0.0065797637,0.04516306],"genre_scores_gemma":[0.83038497,0.00010168713,0.15995184,0.000114032424,0.000011821629,0.00033561923,0.0012320336,0.0005637727,0.0073042717],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9998673,0.000027462147,0.000005299314,0.000017572153,0.00005761006,0.00002486242],"domain_scores_gemma":[0.99961084,0.00021779827,0.000020061694,0.000042376545,0.00009314855,0.000015821326],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00032742412,0.00042685805,0.00030993784,0.0002791569,0.0004664717,0.000636348,0.00090420374,0.0007003339,0.011164599],"category_scores_gemma":[0.0010773189,0.00023762169,0.00031680547,0.00025152444,0.00025973757,0.0004868848,0.0002495138,0.00051032094,0.00080242986],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0002459146,0.00017697047,0.0022801226,0.00015466625,0.000032155738,0.00014986795,0.00018571637,0.92930275,0.012254821,0.029274896,0.0035685967,0.022373544],"study_design_scores_gemma":[0.000020488227,0.000020002835,0.00010734265,0.0000047594117,0.0000041718063,0.000011272916,0.000012177181,0.99121535,0.0049036318,0.0017798757,0.0019154693,0.0000053954864],"about_ca_topic_score_codex":0.006820508,"about_ca_topic_score_gemma":0.005209185,"teacher_disagreement_score":0.011164599,"about_ca_system_score_codex":0.00084563735,"about_ca_system_score_gemma":0.0013579936,"threshold_uncertainty_score":0.037349343},"labels":[],"label_agreement":null},{"id":"W4386701110","doi":"10.1016/j.sse.2023.108779","title":"A tunable and versatile 28 nm FD-SOI crossbar output circuit for low power analog SNN inference with eNVM synapses","year":2023,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"Advanced Memory and Neural Computing","field":"Engineering","cited_by":6,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Institut interdisciplinaire d'innovation technologique; Université de Sherbrooke","funders":"Agence Nationale de la Recherche","keywords":"Silicon on insulator; Crossbar switch; Spin-transfer torque; Electrical engineering; Computer science; CMOS; Capacitance; Spice; Electronic engineering; Magnetoresistive random-access memory; Materials science; Engineering; Optoelectronics; Computer hardware; Physics; Silicon; Random access memory","score_opus":0.013545186228376362,"score_gpt":0.2519372507036726,"score_spread":0.23839206447529626,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4386701110","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.5328954,0.0012604299,0.40683252,0.001322853,0.0008512638,0.00023812614,0.0008486064,0.0064750426,0.049275808],"genre_scores_gemma":[0.94893765,0.000099820456,0.04267864,0.0002499252,0.000033419088,0.00003968145,0.00012898732,0.00009067734,0.007741295],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9998677,0.000009156143,0.000006866515,0.000047926653,0.00004539093,0.000022859174],"domain_scores_gemma":[0.9998839,0.000024713856,0.000018184384,0.000024164761,0.000034764318,0.000014209024],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00018547794,0.00028673979,0.0001655953,0.00022156505,0.0003595253,0.00046046588,0.001557224,0.00034413298,0.0045339917],"category_scores_gemma":[0.00035384248,0.00015780117,0.00013319934,0.00018019648,0.00023326038,0.0005248189,0.00043786585,0.00038809015,0.0006624998],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00027521868,0.00022294032,0.0014022419,0.00023121605,0.00005424755,0.00030837645,0.00018138165,0.0037334396,0.85766774,0.014892519,0.0060557183,0.11497487],"study_design_scores_gemma":[0.00006589547,0.0004598857,0.0029887059,0.000045215234,0.00007691004,0.0005963499,0.00006837638,0.14308648,0.8196314,0.0038891938,0.029047063,0.000044549997],"about_ca_topic_score_codex":0.0012791387,"about_ca_topic_score_gemma":0.005941162,"teacher_disagreement_score":0.0045339917,"about_ca_system_score_codex":0.0005392866,"about_ca_system_score_gemma":0.00043483108,"threshold_uncertainty_score":0.015167773},"labels":[],"label_agreement":null},{"id":"W4392104198","doi":"10.1016/j.sse.2024.108883","title":"Analysis and 3D TCAD simulations of single-qubit control in an industrially-compatible FD-SOI device","year":2024,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"Quantum and electron transport phenomena","field":"Physics and Astronomy","cited_by":5,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Nanoacademic Technologies","funders":"","keywords":"Silicon on insulator; Qubit; Optoelectronics; Electronic engineering; Physics; Materials science; Computer science; Engineering; Quantum mechanics; Silicon; Quantum","score_opus":0.014332136537420928,"score_gpt":0.2752298795522307,"score_spread":0.2608977430148098,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4392104198","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9170198,0.0005745358,0.021649038,0.0012348165,0.00016784831,0.00007664171,0.0017340604,0.0007643496,0.05677899],"genre_scores_gemma":[0.9933896,0.00007376184,0.0042629014,0.00008254619,0.000011109375,0.000043117772,0.00019292446,0.00007759638,0.0018664789],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9998354,0.000020969279,0.0000055780733,0.000016444194,0.00008388392,0.00003767835],"domain_scores_gemma":[0.99942684,0.00031869666,0.000045991226,0.000053504842,0.00012640661,0.00002860553],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00022674073,0.0003767009,0.00066235365,0.00041623748,0.0007668326,0.00071773387,0.0010270268,0.0011449455,0.004779652],"category_scores_gemma":[0.00092776405,0.0003670253,0.00050798606,0.00073698105,0.0007195103,0.0004706281,0.00025336887,0.0005264793,0.00033432862],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00009643222,0.000039979896,0.0011920793,0.00010324427,0.000025866608,0.00013573389,0.00009962936,0.9851093,0.0030389314,0.006303598,0.0016067092,0.002248479],"study_design_scores_gemma":[0.000009773862,0.000015374992,0.00028823345,0.000004782824,0.0000038695675,0.000008828156,0.000016633927,0.99819,0.000699306,0.00043184392,0.00032546237,0.000005753511],"about_ca_topic_score_codex":0.01970733,"about_ca_topic_score_gemma":0.018121645,"teacher_disagreement_score":0.01970733,"about_ca_system_score_codex":0.0018129495,"about_ca_system_score_gemma":0.0013426131,"threshold_uncertainty_score":0.039185226},"labels":[],"label_agreement":null},{"id":"W4407357202","doi":"10.1016/j.sse.2025.109082","title":"Degradation mechanisms for static and dynamic characteristics in 1.2 kV 4H-SiC MOSFETs under repetitive short-circuit tests","year":2025,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"Silicon Carbide Semiconductor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Toronto","funders":"Jiangsu Provincial Key Research and Development Program; Joint Project of Industry-University-Research of Jiangsu Province; China Scholarship Council","keywords":"Degradation (telecommunications); Materials science; MOSFET; Optoelectronics; Electrical engineering; Electronic engineering; Engineering; Transistor; Voltage","score_opus":0.01021698030372601,"score_gpt":0.26277103037051047,"score_spread":0.25255405006678444,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4407357202","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.996555,0.0005129934,0.0013073725,0.00007738361,0.00003066455,0.000015306612,0.00037744723,0.00020075074,0.00092314614],"genre_scores_gemma":[0.9991473,0.000051887593,0.00015426644,0.000014617601,0.00000642843,0.0000052847618,0.00010174183,0.0000100209145,0.0005084131],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.999526,0.000025380561,0.00002844256,0.000088306995,0.00021388633,0.00011793455],"domain_scores_gemma":[0.998517,0.00045299256,0.00019852007,0.00016677003,0.0005509826,0.00011369821],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00047938403,0.00030331357,0.00042627248,0.0007673011,0.00032586086,0.00040026658,0.0007039845,0.0008317731,0.0027846936],"category_scores_gemma":[0.0015546017,0.00019761095,0.00034154812,0.0005423405,0.0005837237,0.0006842108,0.00021522073,0.0005412625,0.0003688081],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0010867687,0.0000911282,0.0074518956,0.00018030604,0.000050796287,0.000790856,0.00085589837,0.0027533665,0.9741692,0.00038867368,0.0007206387,0.0114605725],"study_design_scores_gemma":[0.000038203096,0.0013982557,0.08177417,0.000047820547,0.00008969705,0.0011376687,0.0006994653,0.030054782,0.8826115,0.00036040446,0.001727541,0.0000604385],"about_ca_topic_score_codex":0.0025924363,"about_ca_topic_score_gemma":0.002104237,"teacher_disagreement_score":0.0027846936,"about_ca_system_score_codex":0.00081083,"about_ca_system_score_gemma":0.00022355531,"threshold_uncertainty_score":0.009315729},"labels":[],"label_agreement":null},{"id":"W4409846751","doi":"10.1016/j.sse.2025.109141","title":"Preliminary results on industrial 28nm FD-SOI phase change memory at cryogenic temperature","year":2025,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"Phase-change materials and chalcogenides","field":"Materials Science","cited_by":0,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Institut interdisciplinaire d'innovation technologique; Institut quantique; Université de Sherbrooke","funders":"","keywords":"Cryogenic temperature; Silicon on insulator; Phase change; Phase-change memory; Materials science; Engineering physics; Optoelectronics; Physics; Composite material; Silicon","score_opus":0.041117739251428136,"score_gpt":0.31326218820247287,"score_spread":0.2721444489510447,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4409846751","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9903526,0.0006878388,0.002535718,0.000146317,0.000035915695,0.000079202735,0.00047536322,0.00020463415,0.0054824837],"genre_scores_gemma":[0.99451387,0.0001594998,0.0011324995,0.000028707651,0.000015236184,0.00002315013,0.0003278784,0.00003796431,0.0037611437],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99977285,0.000043951775,0.0000053241656,0.00003449916,0.00007318254,0.00007013768],"domain_scores_gemma":[0.999438,0.00018412828,0.00004898752,0.00009261677,0.00018238499,0.000053848722],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0005168789,0.00048268036,0.00043517008,0.0002312726,0.0009966352,0.00045521086,0.0004952734,0.0004327216,0.0045596445],"category_scores_gemma":[0.000648822,0.00013435146,0.00032254905,0.00034507437,0.00060685835,0.0005514725,0.00033433692,0.00036631164,0.00067965535],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0025630887,0.00052563637,0.0047378815,0.0004286197,0.00007096768,0.00025325248,0.0010008496,0.0033664813,0.97208035,0.00053185393,0.001653829,0.012787353],"study_design_scores_gemma":[0.000100748235,0.003664935,0.012545724,0.0000140881875,0.00007630601,0.00011329665,0.00027697723,0.0016995552,0.9774089,0.00008206426,0.003999346,0.000017969713],"about_ca_topic_score_codex":0.0034167662,"about_ca_topic_score_gemma":0.0031613966,"teacher_disagreement_score":0.0045596445,"about_ca_system_score_codex":0.00066520256,"about_ca_system_score_gemma":0.00031637747,"threshold_uncertainty_score":0.015253484},"labels":[],"label_agreement":null},{"id":"W4410644124","doi":"10.1016/j.sse.2025.109153","title":"Rigorous analysis on the operating mechanism of gate-injection ferroelectric flash","year":2025,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"Ferroelectric and Negative Capacitance Devices","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":false,"route_ca_aff":false,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"","funders":"Institute for Information and Communications Technology Promotion; Samsung; Ministry of Science and ICT, South Korea; IC Design Education Center; Information Technology Research Centre; National Research Foundation","keywords":"Flash (photography); Mechanism (biology); Ferroelectricity; Flash memory; Materials science; Optoelectronics; Computer science; Embedded system; Optics; Physics","score_opus":0.006332516305171447,"score_gpt":0.23140082057167388,"score_spread":0.22506830426650243,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4410644124","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.3033391,0.0048678108,0.5110146,0.004152558,0.0005772168,0.00011040987,0.0004136177,0.00034623448,0.17517853],"genre_scores_gemma":[0.97506046,0.0007611885,0.009805734,0.0003256667,0.00021968418,0.00004973191,0.0001041948,0.000093727984,0.013579558],"study_design_codex":"theoretical_or_conceptual","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9997547,0.000056753255,0.000008819989,0.000031359286,0.00009935735,0.000048961283],"domain_scores_gemma":[0.99949396,0.00022927107,0.000048536658,0.000060340823,0.0001322486,0.000035687597],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0007432877,0.00061336637,0.0006981615,0.0009228816,0.00068993494,0.0009924212,0.001263933,0.001053076,0.005460422],"category_scores_gemma":[0.001940688,0.00025795575,0.00070259743,0.00036505086,0.0017903834,0.0021060589,0.0008038971,0.0011148646,0.00036418866],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000022283806,0.00002321188,0.00013971173,0.000053933014,0.000012544173,0.00008982036,0.00004848052,0.013530973,0.003152291,0.98035216,0.0009149976,0.0016594115],"study_design_scores_gemma":[0.000017714594,0.000017956907,0.0004159787,0.000020890895,0.000011916279,0.0001393168,0.000044341148,0.442889,0.001066531,0.55432004,0.0010339762,0.000022411634],"about_ca_topic_score_codex":0.0014302628,"about_ca_topic_score_gemma":0.0011617751,"teacher_disagreement_score":0.005460422,"about_ca_system_score_codex":0.001114219,"about_ca_system_score_gemma":0.00074785086,"threshold_uncertainty_score":0.018266916},"labels":[],"label_agreement":null},{"id":"W4410816239","doi":"10.1016/j.sse.2025.109156","title":"Preliminary numerical study on magnet gate in MOS FD-SOI technology for quantum and sensor applications","year":2025,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Institut interdisciplinaire d'innovation technologique; Université de Sherbrooke","funders":"","keywords":"Silicon on insulator; Optoelectronics; Magnet; Physics; Quantum; Materials science; Electrical engineering; Engineering physics; Engineering; Silicon; Quantum mechanics","score_opus":0.009627530095720543,"score_gpt":0.28322691410380363,"score_spread":0.2735993840080831,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4410816239","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.87603766,0.0016236096,0.039083086,0.0012899096,0.00024559145,0.00008240048,0.0005745044,0.00025649846,0.08080671],"genre_scores_gemma":[0.9899311,0.0002385664,0.00640368,0.00006806577,0.00002403789,0.00001812649,0.000082594444,0.000028505006,0.0032052603],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9999566,0.000009265595,0.0000014773634,0.000005137445,0.000016787011,0.000010689805],"domain_scores_gemma":[0.99973005,0.00015632075,0.000028898568,0.000016179012,0.00005379618,0.000014860225],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00014973515,0.0001880282,0.0002690258,0.00022266993,0.00040975882,0.00034183543,0.00039719415,0.00048818768,0.0030164733],"category_scores_gemma":[0.0006872202,0.00010474855,0.00023602057,0.00029694661,0.00025076518,0.00040214194,0.00013095235,0.00021804594,0.00014745469],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0002479061,0.00015784717,0.003907445,0.0005016698,0.000046951154,0.0004915263,0.00015416977,0.89127904,0.044352874,0.043322496,0.0033820663,0.012155947],"study_design_scores_gemma":[0.000010485838,0.000038115413,0.0007024462,0.000009557659,0.000008058156,0.000025418274,0.000031162937,0.9947731,0.00257983,0.0011177862,0.0006982078,0.0000059103572],"about_ca_topic_score_codex":0.0037598584,"about_ca_topic_score_gemma":0.0047744135,"teacher_disagreement_score":0.0037598584,"about_ca_system_score_codex":0.0004607824,"about_ca_system_score_gemma":0.00033509798,"threshold_uncertainty_score":0.010091126},"labels":[],"label_agreement":null},{"id":"W4414077628","doi":"10.1016/j.sse.2025.109230","title":"Silicon nanowire field-effect transistor biosensors with bowtie antenna","year":2025,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"Nanowire Synthesis and Applications","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"","funders":"China Scholarship Council; Helmholtz-Alberta Initiative; Helmholtz-Gemeinschaft","keywords":"Biosensor; Nanowire; Transistor; Antenna (radio); Wafer; Silicon; Noise (video); Silicon on insulator","score_opus":0.002309641400801917,"score_gpt":0.21130369569417884,"score_spread":0.20899405429337692,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4414077628","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9626517,0.0011643082,0.033857677,0.00022608433,0.00013521785,0.00006809706,0.00020705136,0.0003670133,0.0013227524],"genre_scores_gemma":[0.94586575,0.0007662414,0.050045047,0.00013266478,0.00004796797,0.00007005573,0.0002735387,0.00003673363,0.0027621267],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9996319,0.000038293332,0.00002943784,0.00010906528,0.00015473919,0.000036468038],"domain_scores_gemma":[0.9996785,0.00008956495,0.00009406956,0.00004039647,0.00006868533,0.000028855357],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0003328555,0.0003855689,0.0005066463,0.00027068658,0.00012254457,0.0003726139,0.0006232422,0.0010934991,0.00043379853],"category_scores_gemma":[0.0005012252,0.000374982,0.00037923595,0.00024690237,0.0002713936,0.00056945503,0.0003593935,0.00041073462,0.00033858267],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000009640365,0.0000047066846,0.000069873146,0.000014213323,0.0000035637936,0.000020013511,0.000005986096,0.00007741174,0.9993388,0.00003285979,0.000013414453,0.00040954322],"study_design_scores_gemma":[0.000006668415,0.000118131415,0.000977665,0.0000033171807,0.00000894437,0.00010538024,0.000008829633,0.003302379,0.9948698,0.00003802581,0.000553124,0.000007800147],"about_ca_topic_score_codex":0.00039052585,"about_ca_topic_score_gemma":0.0007461264,"teacher_disagreement_score":0.0010934991,"about_ca_system_score_codex":0.00047027585,"about_ca_system_score_gemma":0.0001318276,"threshold_uncertainty_score":0.0034121275},"labels":[],"label_agreement":null},{"id":"W4415654271","doi":"10.1016/j.sse.2025.109285","title":"3D simulation of charge defect impact on an industrial 28 nm FD-SOI quantum dot","year":2025,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Nanoacademic Technologies; Institut quantique; Université de Sherbrooke","funders":"Canadian Nautical Research Society; Bundesbehörden der Schweizerischen Eidgenossenschaft; Canada Foundation for Innovation; Natural Sciences and Engineering Research Council of Canada; Fonds de recherche du Québec; Université de Sherbrooke; European Commission; Key Digital Technologies Joint Undertaking; Université Grenoble Alpes","keywords":"Quantum dot; Charge (physics); Sensitivity (control systems); Quantum; Quality (philosophy); Quantum computer; Quantum dot laser","score_opus":0.022404924793085163,"score_gpt":0.3112807901526339,"score_spread":0.28887586535954873,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4415654271","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"metacan-v3-hybrid-931329e0061c","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9683612,0.00014982685,0.005574162,0.0005828132,0.00008181415,0.000022905238,0.00062503933,0.00027866877,0.024323523],"genre_scores_gemma":[0.99616003,0.000035376375,0.0014500967,0.000050665043,0.000005655671,0.000014636492,0.00011791992,0.000040129795,0.0021254267],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9998747,0.000012747731,0.000002995791,0.000016346055,0.0000530963,0.00004018195],"domain_scores_gemma":[0.9994997,0.00027035765,0.000036601774,0.000037769,0.000106071966,0.0000495263],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00018298844,0.0002917125,0.00051103014,0.00026348716,0.00083901646,0.00068006874,0.00080266583,0.0015272428,0.006440268],"category_scores_gemma":[0.0007516856,0.00035450427,0.00052007515,0.0005112818,0.0007231847,0.00051121967,0.000406745,0.0005796346,0.00031370943],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00012617046,0.000082895865,0.0020069738,0.00007128033,0.000031053532,0.00031503307,0.00009860965,0.9850572,0.0058073597,0.0036011722,0.0011513743,0.0016509034],"study_design_scores_gemma":[0.000014434243,0.000035778794,0.00059585564,0.0000032507864,0.000005689691,0.00001602564,0.000034190904,0.99755234,0.0011697916,0.000262413,0.00030347856,0.0000068666327],"about_ca_topic_score_codex":0.024008278,"about_ca_topic_score_gemma":0.01546698,"teacher_disagreement_score":0.024008278,"about_ca_system_score_codex":0.0017139962,"about_ca_system_score_gemma":0.001024649,"threshold_uncertainty_score":0.047737062},"labels":[],"label_agreement":null}]}