{"meta":{"query_hash":"2a9d5b345905","filters":{"venue":"Solid-State Electronics"},"cohort_total":45,"direct_labels_cover":0,"predictions_cover":45,"exported":45,"export_cap":100000,"truncated":false,"label_status":"direct model label, unvalidated","prediction_status":"machine_predicted_unvalidated (Codex and Gemma teacher distillation)","score_status":"score_only:v0-immature-baseline","snapshot":{"source":"OpenAlex, pinned release, all 482 partitions","release":"2026-06-24","frame_built":"2026-07-12"},"permalink":"https://metacan.xera.ac/q/2a9d5b345905","api":"https://metacan.xera.ac/api/v1/cohort?venue=Solid-State+Electronics"},"results":[{"id":"W1964907854","doi":"10.1016/j.sse.2014.08.009","title":"GaN–InGaN LED efficiency reduction from parasitic electron currents in p-GaN","year":2014,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":7,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Lakehead University","funders":"","keywords":"Voltage droop; Optoelectronics; Electron; Materials science; Light-emitting diode; Heterojunction; Quantum tunnelling; Electrode; Wide-bandgap semiconductor; Saturation current; Current (fluid); Gallium nitride; Voltage; Physics; Layer (electronics); Nanotechnology; Voltage source","score_opus":0.007337940722567558,"score_gpt":0.266605402470353,"score_spread":0.2592674617477855,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1964907854","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9964157,0.0002520378,0.0012462264,0.00008261357,0.00059616345,0.00030992413,0.000038519986,0.000074883836,0.0009839732],"genre_scores_gemma":[0.9988568,0.000040874507,0.000035976533,0.00004456477,0.00043742018,0.0000394293,0.0003252478,0.000053762455,0.00016594336],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9975165,0.00018993886,0.0004985512,0.0005543749,0.00022483851,0.0010157626],"domain_scores_gemma":[0.9991419,0.000054936496,0.00022718597,0.0003873061,0.00006250101,0.00012622689],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.00034783757,0.00033777265,0.0004291639,0.00012846066,0.00014256871,0.00011694899,0.00028426282,0.000073547126,0.00021875469],"category_scores_gemma":[0.000011675875,0.0003447593,0.00011427338,0.00027811734,0.000043941625,0.0002017826,0.000017353435,0.00040215685,0.00011648172],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000109500026,0.0005538842,0.007462225,0.00003893671,0.00010589722,0.0000020962364,0.001288403,0.0040811496,0.9738884,0.00447283,0.00034608736,0.007650576],"study_design_scores_gemma":[0.0019552018,0.00041612622,0.0015271272,0.000086441025,0.00007962122,0.0000023011994,0.00018319499,0.005220489,0.9489282,0.032568544,0.008271349,0.00076140463],"about_ca_topic_score_codex":0.0006145982,"about_ca_topic_score_gemma":0.000107377266,"teacher_disagreement_score":0.028095715,"about_ca_system_score_codex":0.0001668999,"about_ca_system_score_gemma":0.00019940274,"threshold_uncertainty_score":0.99990046},"labels":[],"label_agreement":null},{"id":"W1982238004","doi":"10.1016/s0038-1101(00)00083-6","title":"A scalable thermal model for trench isolated bipolar devices","year":2000,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":17,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Nortel (Canada); Carleton University","funders":"","keywords":"Trench; Bipolar junction transistor; Scalability; Thermal; Thermal resistance; Materials science; Transistor; Variety (cybernetics); Optoelectronics; Electronic engineering; Computer science; Electrical engineering; Engineering; Physics; Nanotechnology; Thermodynamics; Voltage","score_opus":0.01289828342069317,"score_gpt":0.24623076930596696,"score_spread":0.2333324858852738,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1982238004","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.7813159,0.02963238,0.18145812,0.00004340294,0.0002944029,0.001026174,0.00018451184,0.0010937662,0.0049513076],"genre_scores_gemma":[0.9903112,0.0028396302,0.0011083196,0.00019504865,0.00008673926,0.0001053546,0.00006790564,0.000127344,0.0051584435],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.998311,0.000015457927,0.000323523,0.00029273483,0.00014997224,0.00090732606],"domain_scores_gemma":[0.9994866,0.00003330846,0.000039218998,0.00029225164,0.00004774773,0.00010081996],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.00012615768,0.00028469204,0.0002662594,0.000060652386,0.00013801096,0.000059168175,0.00027598735,0.00010503533,0.0003255642],"category_scores_gemma":[0.0000029689577,0.00028664444,0.0000962291,0.00022099733,0.000026341768,0.00033041264,0.00000848091,0.00024048609,0.00007106208],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000043638596,0.00004549587,0.000035145404,0.00008325115,0.0001623952,0.000002001306,0.00056378066,0.8539014,0.038846876,0.00028979962,0.0008880973,0.1051381],"study_design_scores_gemma":[0.0004941829,0.00010182113,0.000005389291,0.000015851583,0.00003744079,0.0000039905112,0.0000138889645,0.8902702,0.0076741087,0.0021983166,0.09883377,0.0003510591],"about_ca_topic_score_codex":0.00000460028,"about_ca_topic_score_gemma":0.00004994324,"teacher_disagreement_score":0.20899527,"about_ca_system_score_codex":0.00016190246,"about_ca_system_score_gemma":0.000073087715,"threshold_uncertainty_score":0.9999586},"labels":[],"label_agreement":null},{"id":"W1989855709","doi":"10.1016/j.sse.2005.01.013","title":"Ion implantation dose high-resolution monitoring in Si wafers using laser infrared photothermal radiometry with lock-in common-mode-rejection demodulation","year":2005,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"Ion-surface interactions and analysis","field":"Engineering","cited_by":2,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Toronto","funders":"","keywords":"Wafer; Materials science; Ion implantation; Demodulation; Photothermal therapy; Ion; Optics; Infrared; Optoelectronics; Laser; Radiometry; Lock (firearm); Chemistry; Nanotechnology; Electrical engineering; Physics","score_opus":0.006592163174595163,"score_gpt":0.2538244277463755,"score_spread":0.24723226457178032,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1989855709","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9877379,0.00022015207,0.011349647,0.000022016915,0.00020357425,0.00020444558,0.000009713961,0.00013661454,0.00011594448],"genre_scores_gemma":[0.9980611,0.00031712124,0.0012590154,0.000008947715,0.00013074718,0.00001956395,0.000074399395,0.000055877743,0.00007317728],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99852806,0.000062995976,0.00043168143,0.00024337597,0.00021608263,0.0005177922],"domain_scores_gemma":[0.9995881,0.00004165983,0.0000976603,0.00016911404,0.00005220215,0.000051273684],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.00018095941,0.00023111433,0.0002610217,0.0006228072,0.00012519606,0.00007852158,0.000077808334,0.00011715115,0.000015573683],"category_scores_gemma":[0.0000057464226,0.00024948246,0.000054553882,0.001046231,0.000015504382,0.0007405229,0.000010663892,0.0004156508,0.00000887257],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0001078763,0.000045397705,0.0042798487,0.000020103522,0.0000462182,0.000005491059,0.0003585572,0.92268336,0.066370666,0.000006941997,0.000008872586,0.0060666855],"study_design_scores_gemma":[0.00089759845,0.000059768136,0.008466493,0.000089682464,0.000032675336,0.000020052037,0.0001423516,0.8991082,0.09063559,0.00013852425,0.00012626409,0.00028283094],"about_ca_topic_score_codex":0.0010335187,"about_ca_topic_score_gemma":0.0042322907,"teacher_disagreement_score":0.024264922,"about_ca_system_score_codex":0.0018215344,"about_ca_system_score_gemma":0.000055960827,"threshold_uncertainty_score":0.99999577},"labels":[],"label_agreement":null},{"id":"W1996637315","doi":"10.1016/j.sse.2009.03.003","title":"Current conduction models in the high temperature single-electron transistor","year":2009,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"Quantum and electron transport phenomena","field":"Physics and Astronomy","cited_by":18,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Université de Sherbrooke","funders":"Natural Sciences and Engineering Research Council of Canada; Fonds Québécois de la Recherche sur la Nature et les Technologies","keywords":"Thermionic emission; Thermal conduction; Transistor; Coulomb blockade; Electron; Materials science; Current (fluid); Condensed matter physics; Monte Carlo method; Conduction electron; Optoelectronics; Physics; Electrical engineering; Thermodynamics; Engineering; Voltage; Quantum mechanics","score_opus":0.011956826085221152,"score_gpt":0.24640023759428642,"score_spread":0.23444341150906528,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1996637315","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.990971,0.0034910038,0.0018761693,0.0014590935,0.00019195059,0.000508206,0.000032152526,0.00007785822,0.0013925256],"genre_scores_gemma":[0.9987603,0.00026819747,0.000025182613,0.00024357924,0.00026151078,0.000042033604,0.00024215704,0.000032345204,0.00012468698],"study_design_codex":"theoretical_or_conceptual","study_design_gemma":"theoretical_or_conceptual","domain_scores_codex":[0.99755615,0.00012633226,0.00042721818,0.0004587853,0.0003209586,0.0011105478],"domain_scores_gemma":[0.9993455,0.000030232222,0.00010999685,0.00036514964,0.00006393372,0.00008518481],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.00031028056,0.00036813947,0.000347264,0.00012080994,0.00020811585,0.000092905815,0.00036096628,0.00007308635,0.000057132762],"category_scores_gemma":[0.0000011662848,0.0002929162,0.00016726095,0.00052470557,0.000045638266,0.00036057743,0.0000044461763,0.0010982878,0.000014327633],"study_design_candidate":"theoretical_or_conceptual","study_design_consensus":"theoretical_or_conceptual","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00072318816,0.004136067,0.00044897498,0.000071365495,0.00024881514,0.000016213507,0.010151639,0.027218344,0.1660542,0.69807893,0.004569892,0.088282384],"study_design_scores_gemma":[0.0034042615,0.0024138053,0.0013842591,0.00007635794,0.0001814681,0.000013191829,0.00051554054,0.0023376294,0.081443146,0.8703818,0.0363554,0.0014931577],"about_ca_topic_score_codex":0.000044863657,"about_ca_topic_score_gemma":0.00009272605,"teacher_disagreement_score":0.17230287,"about_ca_system_score_codex":0.00020181689,"about_ca_system_score_gemma":0.0002453497,"threshold_uncertainty_score":0.9999523},"labels":[],"label_agreement":null},{"id":"W1997322169","doi":"10.1016/s0038-1101(01)00305-7","title":"Modeling thermal resistance in trench-isolated bipolar technologies including trench heat flow","year":2002,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"Silicon Carbide Semiconductor Technologies","field":"Engineering","cited_by":39,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Carleton University","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Trench; Common emitter; Thermal conduction; Materials science; Thermal resistance; Bipolar junction transistor; Thermal; Optoelectronics; Flow (mathematics); Mechanics; Transistor; Electrical engineering; Composite material; Engineering; Physics; Voltage; Thermodynamics","score_opus":0.01959249434021978,"score_gpt":0.2308944768009676,"score_spread":0.21130198246074783,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W1997322169","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9128336,0.07982896,0.00081971695,0.00025829065,0.00019368742,0.00026546651,0.000020585425,0.00495736,0.00082233234],"genre_scores_gemma":[0.9886061,0.010329726,0.00070260995,0.00001991757,0.000024984589,0.00006347743,0.000011219052,0.0001123053,0.00012967676],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.997183,0.000039435134,0.00060962915,0.00053125777,0.0002608643,0.001375818],"domain_scores_gemma":[0.99905205,0.00006818925,0.000040734747,0.0007346269,0.000052658674,0.000051715422],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.00020383151,0.00049175665,0.0005188635,0.00066775567,0.00012442279,0.00007561067,0.0006923057,0.00042792526,0.00003623699],"category_scores_gemma":[0.00012437439,0.0005217119,0.00011142172,0.0013250855,0.000107690015,0.00038814827,0.00013955965,0.0012789412,0.000039721126],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000018311317,0.00004320431,0.00026710393,0.000071251125,0.00009143394,0.00005304122,0.0011060241,0.57150555,0.40302333,0.0002616332,0.00037851252,0.023180608],"study_design_scores_gemma":[0.00046626368,0.00006116054,0.000011106125,0.00007632819,0.000014075343,0.000009873837,0.00025704002,0.90699196,0.087427616,0.0026275148,0.0015054035,0.00055164995],"about_ca_topic_score_codex":0.000026507681,"about_ca_topic_score_gemma":0.001026084,"teacher_disagreement_score":0.3354864,"about_ca_system_score_codex":0.0008165441,"about_ca_system_score_gemma":0.00003570369,"threshold_uncertainty_score":0.99972343},"labels":[],"label_agreement":null},{"id":"W2002010382","doi":"10.1016/s0038-1101(01)00289-1","title":"Carrier transport and luminescence in composite organic–inorganic light-emitting devices","year":2002,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"Organic Light-Emitting Diodes Research","field":"Engineering","cited_by":14,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Toronto","funders":"","keywords":"Composite number; Nanocrystal; Luminescence; Optoelectronics; Materials science; Quantum dot; Polymer; Light emission; Light-emitting diode; Nanotechnology; Composite material","score_opus":0.006910407943409027,"score_gpt":0.217302573843917,"score_spread":0.21039216590050797,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2002010382","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.98902917,0.008206379,0.0001909966,0.0003003299,0.00014463198,0.00031209257,0.000012394011,0.0004436481,0.0013603728],"genre_scores_gemma":[0.99661624,0.0023792717,0.00019435788,0.00007456572,0.00009700823,0.00001477587,0.000010687993,0.00015377508,0.0004593255],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.997141,0.0000599828,0.0005764517,0.0005111411,0.0003957479,0.0013157009],"domain_scores_gemma":[0.999116,0.00010006478,0.000060379585,0.00041573247,0.000073295996,0.00023450708],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.00035059388,0.00040043253,0.0004543573,0.00023393698,0.00013882777,0.00008690335,0.00042303183,0.00017561801,0.00021256268],"category_scores_gemma":[0.000042623953,0.00042872495,0.00005997405,0.0009342062,0.00006338301,0.00033351482,0.000067093926,0.00089746754,0.00009128183],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000025790356,0.0001452527,0.09605243,0.0007204033,0.00022481642,0.00023898829,0.009157462,0.00041506212,0.8901273,0.00014307513,0.00070345117,0.0020459467],"study_design_scores_gemma":[0.002284268,0.00025212095,0.010341142,0.00029657525,0.00008867096,0.00022130499,0.0003483943,0.083269455,0.88268256,0.000122209,0.018285211,0.0018080963],"about_ca_topic_score_codex":0.000022751283,"about_ca_topic_score_gemma":0.00057549914,"teacher_disagreement_score":0.085711285,"about_ca_system_score_codex":0.0004048944,"about_ca_system_score_gemma":0.0000666301,"threshold_uncertainty_score":0.9998165},"labels":[],"label_agreement":null},{"id":"W2006257990","doi":"10.1016/j.sse.2007.07.011","title":"Simulation of a dual gate organic transistor compatible with printing methods","year":2007,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"Organic Electronics and Photovoltaics","field":"Engineering","cited_by":7,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of British Columbia","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Organic field-effect transistor; Materials science; Transistor; Optoelectronics; Organic semiconductor; Semiconductor; Field-effect transistor; Schottky barrier; Voltage; Electrical engineering","score_opus":0.008781989402564713,"score_gpt":0.2750154381408469,"score_spread":0.2662334487382822,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2006257990","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.62475264,0.00095623045,0.37332466,0.000010300708,0.00007936742,0.00021304234,0.0000049872237,0.00020459008,0.00045419123],"genre_scores_gemma":[0.9932841,0.00016717985,0.00627527,0.000020740763,0.000044810196,0.000003440996,0.00001524582,0.00011087092,0.00007834425],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99818504,0.0000440139,0.0004871483,0.00023064441,0.00023473338,0.0008184259],"domain_scores_gemma":[0.99912816,0.00023985229,0.00011354928,0.00028123942,0.00013300135,0.00010417325],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.00083858287,0.00026125764,0.00036055958,0.00013937324,0.00008169847,0.000022210123,0.00014333022,0.00010029828,0.00005303527],"category_scores_gemma":[0.000028200235,0.00025687343,0.00007042392,0.00062982575,0.0000388951,0.00011028884,0.000016406499,0.00046284136,0.000006112385],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000063687265,0.000040724004,0.00010003491,0.00011733058,0.0001521367,0.0000051766574,0.00095703255,0.46651077,0.52796924,0.00044585453,0.000010389579,0.0036276376],"study_design_scores_gemma":[0.0005133024,0.00029329097,0.000094666924,0.00002318283,0.000051910698,0.000009319618,0.0000369756,0.2570684,0.7368394,0.0007445603,0.004037804,0.00028716328],"about_ca_topic_score_codex":0.000010451114,"about_ca_topic_score_gemma":0.00050327915,"teacher_disagreement_score":0.36853147,"about_ca_system_score_codex":0.00029603354,"about_ca_system_score_gemma":0.00017821502,"threshold_uncertainty_score":0.9999884},"labels":[],"label_agreement":null},{"id":"W2013008031","doi":"10.1016/j.sse.2008.06.008","title":"Gate dielectric engineering of quarter sub micron AlGaN/GaN MISHFET: A new device architecture for improved transconductance and high cut-off frequency","year":2008,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":7,"is_retracted":false,"has_abstract":false,"route_ca_aff":false,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":true,"ca_institutions":"","funders":"","keywords":"Transconductance; Materials science; Dielectric; Optoelectronics; Quarter (Canadian coin); Electrical engineering; Electronic engineering; Transistor; Engineering; Voltage","score_opus":0.007348290989770578,"score_gpt":0.217789727785481,"score_spread":0.21044143679571042,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2013008031","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9867943,0.0027642115,0.008991908,0.0002867363,0.00017077425,0.00066849246,0.0002255758,0.000053331456,0.00004470407],"genre_scores_gemma":[0.9973452,0.00029930077,0.0016732288,0.000083875566,0.00022463319,0.000047183374,0.00014337875,0.00007767452,0.00010552728],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99809015,0.000031980675,0.00048433422,0.00045761335,0.00010415126,0.00083180144],"domain_scores_gemma":[0.99914294,0.000081754755,0.00022561253,0.00028377151,0.00009833828,0.00016755829],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.00011165404,0.00039165447,0.0005487966,0.00010596263,0.00011676874,0.000039235216,0.0002166701,0.000086732485,0.00003896089],"category_scores_gemma":[0.0000066701364,0.00038078974,0.0001598104,0.0002213689,0.00004367321,0.00014995139,0.000012065228,0.00027191572,0.0000023908547],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000077866134,0.000049823,0.00010583408,0.00011984072,0.0001614974,0.0000013997122,0.0006651075,0.00025016945,0.99299127,0.0012180228,0.00013921612,0.004219938],"study_design_scores_gemma":[0.0019197548,0.0005156553,0.00019042504,0.00005460571,0.000111841604,0.000013827023,0.00003170643,0.0011443472,0.98227113,0.0075594606,0.0056275073,0.00055973086],"about_ca_topic_score_codex":0.00042006423,"about_ca_topic_score_gemma":0.00018381092,"teacher_disagreement_score":0.010720147,"about_ca_system_score_codex":0.000048346974,"about_ca_system_score_gemma":0.00041753374,"threshold_uncertainty_score":0.9998644},"labels":[],"label_agreement":null},{"id":"W2015941658","doi":"10.1016/j.sse.2006.06.014","title":"Application of PVD silver for integrated microwave passives in silicon technology","year":2006,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"Copper Interconnects and Reliability","field":"Materials Science","cited_by":6,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Carleton University","funders":"","keywords":"Materials science; Electromigration; Silicon; Microwave; Monolithic microwave integrated circuit; Optoelectronics; Deposition (geology); Broadband; Copper; Electronic engineering; Metallurgy; Composite material; Computer science; Telecommunications; Engineering","score_opus":0.004420832403206465,"score_gpt":0.2486937233043471,"score_spread":0.24427289090114065,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2015941658","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9882325,0.00057059614,0.009730191,0.0005123768,0.000093288334,0.0005735396,0.000044764653,0.00007050823,0.00017226573],"genre_scores_gemma":[0.9988853,0.000041149473,0.0006965267,0.00003179683,0.000022915981,0.00012099859,0.000033956174,0.000017729917,0.00014965616],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9986348,0.00003586543,0.00043296994,0.0003581575,0.00008826074,0.0004499488],"domain_scores_gemma":[0.99925333,0.00008612372,0.00016189436,0.0003005859,0.0001759417,0.000022099459],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00028843313,0.00014846942,0.00027539104,0.00015198899,0.00004438442,0.000018477684,0.00023861982,0.00013686968,0.000020938924],"category_scores_gemma":[0.000066517416,0.00012527472,0.00006488316,0.0003228859,0.00016012645,0.00007406201,0.00004386661,0.00015137649,0.000013416931],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000077844044,0.00013142177,0.00064927683,0.00003923158,0.000004421657,5.2477327e-7,0.00007773864,0.00044549146,0.9872631,0.006038647,0.00018726732,0.005085052],"study_design_scores_gemma":[0.00046431043,0.00021203414,0.00032700066,0.000016814776,0.0000084603225,0.000002907742,0.000085392494,0.003823755,0.9412571,0.046806764,0.0068539553,0.00014148324],"about_ca_topic_score_codex":0.00028125133,"about_ca_topic_score_gemma":0.0024012846,"teacher_disagreement_score":0.04600596,"about_ca_system_score_codex":0.00019709616,"about_ca_system_score_gemma":0.00015785257,"threshold_uncertainty_score":0.51085544},"labels":[],"label_agreement":null},{"id":"W2031219765","doi":"10.1016/j.sse.2011.05.010","title":"Modeling of current–voltage characteristics of thin film solar cells","year":2011,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"Chalcogenide Semiconductor Thin Films","field":"Engineering","cited_by":28,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Concordia University","funders":"","keywords":"Theory of solar cells; Photocurrent; Solar cell; Current (fluid); Materials science; Absorption (acoustics); Optoelectronics; Drift current; Poisson's equation; Voltage; Thin film; Computational physics; Physics; Solar cell efficiency; Thermodynamics; Nanotechnology; Composite material","score_opus":0.02492885902559945,"score_gpt":0.23615981018854118,"score_spread":0.21123095116294172,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2031219765","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.97454697,0.0025516378,0.020518726,0.0000011344906,0.00084822666,0.00022536881,0.00019728982,0.00020348914,0.00090714614],"genre_scores_gemma":[0.9964651,0.002757951,0.00052099454,0.0000068185122,0.00005091857,0.00000662333,0.00004328864,0.00010058198,0.000047745212],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99813235,0.000026586831,0.0007243434,0.00023846769,0.00024883592,0.000629414],"domain_scores_gemma":[0.9990967,0.000028112205,0.0001477333,0.0004830654,0.00014338871,0.00010099208],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.00025605122,0.00029406673,0.0004894092,0.0001642527,0.000031395648,0.000009709227,0.0003918744,0.00012162219,0.00011127346],"category_scores_gemma":[0.000026970802,0.0003267677,0.0001612283,0.00023580555,0.000051300904,0.00017151832,0.00007105932,0.0005374574,0.000028428723],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000057184825,0.00015341141,0.0001473267,0.0007769509,0.00024564046,0.0000087130375,0.0067850286,0.09120662,0.8958236,0.0009180063,0.00029835894,0.00357916],"study_design_scores_gemma":[0.00021230264,0.00006210372,0.00001370312,0.00005475735,0.0000428383,0.000003198581,0.000052690346,0.4972245,0.5003235,0.0012409997,0.0005203111,0.00024914395],"about_ca_topic_score_codex":0.000028860552,"about_ca_topic_score_gemma":0.000024281686,"teacher_disagreement_score":0.40601787,"about_ca_system_score_codex":0.00010548761,"about_ca_system_score_gemma":0.00010957103,"threshold_uncertainty_score":0.99991846},"labels":[],"label_agreement":null},{"id":"W2033705632","doi":"10.1016/j.sse.2004.05.047","title":"Self-heating in multi-emitter SiGe HBTs","year":2004,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":11,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Institute for Microstructural Sciences","funders":"","keywords":"Common emitter; Materials science; Optoelectronics; Heterojunction bipolar transistor; Bipolar junction transistor; Biasing; Transistor; Heterostructure-emitter bipolar transistor; Thermal; Coupling (piping); Voltage; Electrical engineering; Physics; Composite material","score_opus":0.01411969736616136,"score_gpt":0.2599645760410089,"score_spread":0.24584487867484756,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2033705632","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.939203,0.00530389,0.051790893,0.000029976884,0.0004586084,0.0004647349,0.000009378582,0.00073460484,0.0020048704],"genre_scores_gemma":[0.9940673,0.0011297811,0.004309908,0.00017932073,0.00005743995,0.000035896912,0.000013023775,0.0000838134,0.00012350734],"study_design_codex":"simulation_or_modeling","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9983871,0.00001822414,0.00034563013,0.0002650356,0.00015855872,0.0008254385],"domain_scores_gemma":[0.9995831,0.00002528227,0.00004157173,0.0002474583,0.000025075777,0.00007749832],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.00014276971,0.00024592868,0.00022856929,0.00009468489,0.000057346333,0.00003537982,0.00020295326,0.000088431945,0.000026853942],"category_scores_gemma":[0.000009009439,0.00026854742,0.00005173821,0.00027374757,0.000016329053,0.0002498661,0.000020127514,0.00044530843,0.00007528401],"study_design_candidate":"simulation_or_modeling","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000014205797,0.00030232948,0.0020223598,0.0003724899,0.00022000924,0.00013611715,0.008358525,0.8792396,0.09289242,0.0027460966,0.0001418496,0.013553963],"study_design_scores_gemma":[0.014896309,0.00072922366,0.0014788514,0.00058201316,0.00014212044,0.0001641009,0.0011229509,0.33029103,0.45729503,0.042749435,0.14557101,0.004977907],"about_ca_topic_score_codex":0.000014210124,"about_ca_topic_score_gemma":0.00016645783,"teacher_disagreement_score":0.5489486,"about_ca_system_score_codex":0.00067516963,"about_ca_system_score_gemma":0.00007092072,"threshold_uncertainty_score":0.9999767},"labels":[],"label_agreement":null},{"id":"W2035115639","doi":"10.1016/s0038-1101(00)00134-9","title":"Effects of O2/N2O-plasma treatment on nitride films on strained Si","year":2000,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"Semiconductor materials and devices","field":"Engineering","cited_by":3,"is_retracted":false,"has_abstract":false,"route_ca_aff":false,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"","funders":"University of Tokyo; Ryerson University","keywords":"Nitride; Plasma; Materials science; Composite material; Physics; Quantum mechanics; Layer (electronics)","score_opus":0.005705708426349376,"score_gpt":0.2196254731668914,"score_spread":0.21391976474054203,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2035115639","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9949931,0.00063031586,0.000005052856,0.000015340906,0.00023812451,0.00029937585,0.000044472094,0.00022566614,0.0035485374],"genre_scores_gemma":[0.99721473,0.0018616833,0.000053338583,0.00006678341,0.00007521153,0.000033910357,0.000035898873,0.000064305445,0.000594112],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99876636,0.000033950288,0.0002737539,0.0002260418,0.00016873085,0.00053114543],"domain_scores_gemma":[0.9994528,0.00014644237,0.000043420445,0.0002535266,0.00001850681,0.000085259264],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.00006149772,0.0002962557,0.0003559698,0.00008025344,0.000042672895,0.000031091193,0.00012800288,0.00008659123,0.00035512724],"category_scores_gemma":[0.000010089705,0.00025417996,0.0000948721,0.00012333377,0.00002096777,0.00006171756,0.0000048829356,0.0001253716,0.00018285355],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00032396978,0.0002461551,0.000009078666,0.0002356273,0.0002762868,0.00003666147,0.00053594186,0.057317704,0.9198551,0.00060910167,0.00080644025,0.019747913],"study_design_scores_gemma":[0.001177613,0.0013789672,0.00007979917,0.000059536636,0.000038704868,0.0000040061263,0.000011936515,0.0038122924,0.98397017,0.0005088466,0.008700652,0.00025746622],"about_ca_topic_score_codex":0.000024899264,"about_ca_topic_score_gemma":0.00002947838,"teacher_disagreement_score":0.06411506,"about_ca_system_score_codex":0.00017323598,"about_ca_system_score_gemma":0.000048492988,"threshold_uncertainty_score":0.99999106},"labels":[],"label_agreement":null},{"id":"W2036914515","doi":"10.1016/s0038-1101(02)00379-9","title":"Properties of 1.3 μm InGaNAs laser material grown by MBE using a N2/Ar RF plasma","year":2003,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"Semiconductor Quantum Structures and Devices","field":"Physics and Astronomy","cited_by":12,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Institute for Microstructural Sciences","funders":"","keywords":"Plasma; Materials science; Laser; Optoelectronics; Analytical Chemistry (journal); Chemistry; Optics; Physics; Environmental chemistry; Nuclear physics","score_opus":0.013268345854364883,"score_gpt":0.24025355445646024,"score_spread":0.22698520860209537,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2036914515","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99805486,0.0005595388,0.000102291706,0.000018039413,0.0003158269,0.00019273921,0.00011165314,0.0000338887,0.00061117753],"genre_scores_gemma":[0.99933994,0.00002885362,0.000144896,0.00004546197,0.00012597429,0.000009574387,0.000044267163,0.00005251903,0.00020852424],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99834645,0.00007201555,0.00040026897,0.00031734505,0.0002063462,0.0006575532],"domain_scores_gemma":[0.99931467,0.000017647053,0.00023106812,0.00026506346,0.000082292194,0.00008928297],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00012596458,0.00028790033,0.0003703598,0.000059105867,0.00015070097,0.00008370653,0.00019065262,0.000065709406,0.00028749593],"category_scores_gemma":[0.0000079603105,0.0002446277,0.00011515282,0.00016867036,0.0000871563,0.00020345917,0.000040333096,0.00022064721,0.0000086739765],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00011833354,0.00009693436,0.0013381694,0.000072353425,0.00023244259,0.0000018257994,0.0007215467,0.0005813726,0.98614997,0.009380982,0.0008545213,0.0004515361],"study_design_scores_gemma":[0.00061195914,0.00010643971,0.0000101998,0.000034210734,0.00005122317,0.0000053392964,0.0003341495,0.0009967074,0.9777908,0.0057825968,0.013949164,0.00032724626],"about_ca_topic_score_codex":0.0002981715,"about_ca_topic_score_gemma":0.000019965053,"teacher_disagreement_score":0.013094643,"about_ca_system_score_codex":0.000061135965,"about_ca_system_score_gemma":0.00025353485,"threshold_uncertainty_score":0.9975629},"labels":[],"label_agreement":null},{"id":"W2055770280","doi":"10.1016/s0038-1101(02)00471-9","title":"Modeling negative capacitance effect in organic polymers","year":2003,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"Conducting polymers and applications","field":"Materials Science","cited_by":35,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Victoria","funders":"","keywords":"Capacitance; Materials science; Dispersion (optics); Negative impedance converter; Thermal conduction; Physics; Condensed matter physics; Computational physics; Chemistry; Thermodynamics; Optics; Quantum mechanics; Electrode; Voltage","score_opus":0.009965190934319218,"score_gpt":0.25987900654672125,"score_spread":0.24991381561240203,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2055770280","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9934138,0.0012594503,0.0033254742,0.000141461,0.00016402194,0.0002545976,0.000007360743,0.00008296077,0.0013508494],"genre_scores_gemma":[0.99870723,0.000106762505,0.00032254314,0.00012050179,0.000022340353,0.000053909353,0.000002910938,0.00003300077,0.00063081656],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9983173,0.00014418503,0.00027453632,0.00039377005,0.0001644071,0.00070578646],"domain_scores_gemma":[0.9994082,0.000101686,0.00007132137,0.0002994738,0.0000367398,0.00008257701],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0004603359,0.00019178205,0.0002342081,0.00007725691,0.00016876918,0.000055217526,0.0001988697,0.000056905166,0.00043913914],"category_scores_gemma":[0.00012401227,0.00018638908,0.000049439135,0.0004573049,0.000059080234,0.00014894012,0.000015724514,0.0002603007,0.00011959997],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000014795749,0.000030248573,0.00004616781,0.000009710413,0.000006385819,0.000002562029,0.0007969916,0.003493713,0.99276066,0.0020502897,0.000020844042,0.0007676245],"study_design_scores_gemma":[0.00046290574,0.00009655055,0.0000051201514,0.000017402283,0.000011416867,0.0000075471135,0.00018814733,0.004910452,0.9865721,0.007093742,0.00037820637,0.0002564351],"about_ca_topic_score_codex":0.0001240416,"about_ca_topic_score_gemma":0.0006086568,"teacher_disagreement_score":0.0061885924,"about_ca_system_score_codex":0.00022214936,"about_ca_system_score_gemma":0.00024363495,"threshold_uncertainty_score":0.7600726},"labels":[],"label_agreement":null},{"id":"W2057948294","doi":"10.1016/s0038-1101(02)00008-4","title":"Dynamic finite element approach for analyzing stress and distortion in multilevel devices","year":2002,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"Integrated Circuits and Semiconductor Failure Analysis","field":"Engineering","cited_by":6,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Université du Québec à Trois-Rivières; Université du Québec en Outaouais","funders":"","keywords":"Finite element method; Residual stress; Distortion (music); Thermal; Stress (linguistics); Transient (computer programming); Deformation (meteorology); Materials science; Structural engineering; Electronic engineering; Computer science; Engineering; Composite material; Physics","score_opus":0.010919470811700032,"score_gpt":0.22741427579387896,"score_spread":0.21649480498217893,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2057948294","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.7428415,0.011702633,0.24408266,0.000041138865,0.00009107063,0.0004886743,0.00012863029,0.00018232923,0.00044140848],"genre_scores_gemma":[0.997143,0.0016260444,0.00076571206,0.000019647896,0.000016003587,0.00005929488,0.00016227106,0.000037847127,0.00017019968],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99881846,0.00001882704,0.00031199577,0.00025144665,0.000098728306,0.00050052116],"domain_scores_gemma":[0.999664,0.00004020736,0.00004937554,0.00014706799,0.000045101806,0.00005423568],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0001240143,0.00019846516,0.0002463796,0.00019861224,0.000068470625,0.000054526103,0.0001036955,0.00007510936,0.000019695439],"category_scores_gemma":[0.00001351526,0.00019417543,0.000068083675,0.00022911304,0.000017342125,0.00014897797,0.0000090606045,0.00023412313,0.000002318919],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000017105005,0.00017589425,0.0035998214,0.00049189397,0.0005474245,0.0000057920347,0.0032106077,0.91343606,0.009104955,0.00050168653,0.00020204268,0.06870674],"study_design_scores_gemma":[0.00037334522,0.000046306974,0.0001926852,0.00002222346,0.000057737197,0.000001075623,0.00015970788,0.9957875,0.0018223854,0.00015222041,0.0011420702,0.0002427549],"about_ca_topic_score_codex":0.000025309651,"about_ca_topic_score_gemma":0.0012948045,"teacher_disagreement_score":0.25430152,"about_ca_system_score_codex":0.00028064102,"about_ca_system_score_gemma":0.000011930629,"threshold_uncertainty_score":0.79182446},"labels":[],"label_agreement":null},{"id":"W2061010231","doi":"10.1016/s0038-1101(01)00336-7","title":"A model for exciton formation in organic electroluminescent devices","year":2002,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"Organic Light-Emitting Diodes Research","field":"Engineering","cited_by":6,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Victoria","funders":"","keywords":"Exciton; Electroluminescence; Charge (physics); Charge carrier; Chemical physics; Materials science; Optoelectronics; Charge-carrier density; Chemistry; Condensed matter physics; Physics; Nanotechnology; Quantum mechanics","score_opus":0.019264728159544,"score_gpt":0.251156904200712,"score_spread":0.23189217604116802,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2061010231","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9146783,0.004927994,0.07677703,0.0004087286,0.00015349805,0.0012164238,0.000019693885,0.0007020698,0.0011163091],"genre_scores_gemma":[0.99680257,0.0014770086,0.0005591861,0.00006238809,0.000074878735,0.00010352972,0.000025842417,0.000109289096,0.0007853358],"study_design_codex":"bench_or_experimental","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99786377,0.000026863274,0.00042040038,0.0002576181,0.0002700302,0.0011613172],"domain_scores_gemma":[0.99942213,0.0000674095,0.00004840656,0.0002832517,0.00008097785,0.00009781815],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.00024638238,0.00024334488,0.00025988903,0.00022319378,0.000079131845,0.00007596398,0.00029631722,0.00011701396,0.000076971686],"category_scores_gemma":[0.000055714845,0.00026344403,0.000070397844,0.0005123285,0.00001670515,0.00037259777,0.00003242561,0.00040803722,0.00008415827],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000153901,0.00052706804,0.0004389608,0.0020117727,0.00029548918,0.000028439234,0.01209208,0.07274043,0.88319373,0.0015936181,0.0141949225,0.012729598],"study_design_scores_gemma":[0.00062723417,0.00008806931,0.000009324492,0.000020822368,0.000008994143,0.000010459534,0.00002059324,0.84222597,0.15365559,0.00029164396,0.0027987778,0.00024251569],"about_ca_topic_score_codex":0.0000029792095,"about_ca_topic_score_gemma":0.00060688535,"teacher_disagreement_score":0.76948553,"about_ca_system_score_codex":0.0009065399,"about_ca_system_score_gemma":0.000052548014,"threshold_uncertainty_score":0.99998176},"labels":[],"label_agreement":null},{"id":"W2069231649","doi":"10.1016/j.sse.2014.08.001","title":"Alternative isolation-feature geometries and polarization-engineering of polar AlGaN/GaN HFETs","year":2014,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":4,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Concordia University","funders":"Natural Sciences and Engineering Research Council of Canada; CMC Microsystems","keywords":"Polar; Polarization (electrochemistry); Isolation (microbiology); Optoelectronics; Materials science; Wide-bandgap semiconductor; Feature (linguistics); Computer science; Physics; Chemistry; Biology; Astronomy; Bioinformatics","score_opus":0.004267138411887301,"score_gpt":0.22159938944665195,"score_spread":0.21733225103476464,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2069231649","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.97116405,0.00043096958,0.027556341,0.00009976099,0.00017566174,0.00015999141,0.00012542673,0.000033398417,0.00025439903],"genre_scores_gemma":[0.9989923,0.000033275977,0.0003936296,0.000040543975,0.00015423079,0.0000055156365,0.00015019723,0.0000328369,0.00019745048],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9990367,0.000031264466,0.00023585123,0.00021865524,0.00013317441,0.00034433283],"domain_scores_gemma":[0.9993755,0.000078525656,0.0001826346,0.00017624405,0.00011177457,0.00007529854],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00017043993,0.00019057207,0.00027304672,0.00012461895,0.000082827304,0.000064169784,0.0001225431,0.00004865935,0.000058241552],"category_scores_gemma":[0.000021572743,0.00018566375,0.00005347441,0.0002093913,0.00003091865,0.0001959461,0.00002996394,0.00016870478,0.0000046754435],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000041952953,0.00008886972,0.035060298,0.000138887,0.00039928156,6.530273e-7,0.0012160077,0.00616543,0.8852848,0.06888029,0.00015950168,0.0025640184],"study_design_scores_gemma":[0.0016769082,0.00044439416,0.006785712,0.0000949294,0.00013059654,0.0000036181555,0.00018236872,0.032889694,0.90466166,0.026033059,0.026227195,0.00086989265],"about_ca_topic_score_codex":0.00015798381,"about_ca_topic_score_gemma":0.000014049753,"teacher_disagreement_score":0.042847235,"about_ca_system_score_codex":0.000019511614,"about_ca_system_score_gemma":0.00006159073,"threshold_uncertainty_score":0.7571148},"labels":[],"label_agreement":null},{"id":"W2092644958","doi":"10.1016/j.sse.2007.07.013","title":"Electrical characteristics and simulations of self-switching-diodes in SOI technology","year":2007,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"Semiconductor materials and devices","field":"Engineering","cited_by":34,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Université de Sherbrooke","funders":"Natural Sciences and Engineering Research Council of Canada; CMC Microsystems","keywords":"Silicon on insulator; Diode; Materials science; Optoelectronics; Fabrication; Voltage; Thermal; Silicon; Electric field; Engineering physics; Electronic engineering; Electrical engineering; Engineering; Physics","score_opus":0.005221040787323983,"score_gpt":0.24007446980887254,"score_spread":0.23485342902154854,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2092644958","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.99713105,0.0014400262,0.00089236547,0.00001774062,0.00009418369,0.00010874816,0.000009974833,0.00021208933,0.000093805495],"genre_scores_gemma":[0.99875706,0.00066149444,0.0004864562,0.00001556524,0.000033635864,0.0000025781962,0.000008738143,0.000029003233,0.0000054545926],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9989444,0.0000109667035,0.00036888474,0.0001421632,0.000083487605,0.00045012467],"domain_scores_gemma":[0.99964726,0.00007996814,0.000055885706,0.00013616911,0.00003795794,0.000042740798],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00019108536,0.00014073297,0.00026190694,0.00028067105,0.000029597953,0.000018401333,0.00009476515,0.00012458034,0.000008333918],"category_scores_gemma":[0.000033004148,0.00014597594,0.000019632038,0.00036627514,0.000021721373,0.0000801297,0.000022286005,0.00022506893,0.000002583201],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000034394678,0.00008108011,0.019323867,0.00013980153,0.00007657407,0.000014189944,0.0007156374,0.0021166832,0.9668939,0.0038795194,0.000018809216,0.006705525],"study_design_scores_gemma":[0.0013009859,0.00036550147,0.017983964,0.00007222568,0.000063441505,0.000057285204,0.00010917461,0.19617477,0.76072013,0.015883336,0.0064416765,0.0008274844],"about_ca_topic_score_codex":0.000005962318,"about_ca_topic_score_gemma":0.00012408305,"teacher_disagreement_score":0.20617376,"about_ca_system_score_codex":0.00009129193,"about_ca_system_score_gemma":0.00004075287,"threshold_uncertainty_score":0.5952726},"labels":[],"label_agreement":null},{"id":"W2097058694","doi":"10.1016/j.sse.2010.03.017","title":"Large-signal model for AlGaN/GaN HEMTs suitable for RF switching-mode power amplifiers design","year":2010,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":27,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"École de Technologie Supérieure; University of Calgary","funders":"","keywords":"High-electron-mobility transistor; Amplifier; Large-signal model; RF power amplifier; Transistor; Power (physics); Electronic engineering; Mode (computer interface); SIGNAL (programming language); Computer science; Gallium nitride; Materials science; Electrical engineering; Engineering; Bandwidth (computing); Physics; Voltage; Telecommunications; Layer (electronics)","score_opus":0.016135745330308506,"score_gpt":0.2896510784715701,"score_spread":0.27351533314126164,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2097058694","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.35999218,0.000058391208,0.6377173,0.00007522509,0.00033100092,0.0010371385,0.0005800738,0.00006903768,0.00013964703],"genre_scores_gemma":[0.9919408,0.000007123525,0.0056771226,0.00026020966,0.00029031877,0.0003800914,0.00034678954,0.00013278903,0.0009647487],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9972186,0.00003204921,0.00046055016,0.00057183544,0.0001808495,0.0015361024],"domain_scores_gemma":[0.99870193,0.00018023237,0.00024576136,0.00043181062,0.00021737118,0.00022288886],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.00068912515,0.0004117408,0.00047947254,0.00006158012,0.00040773317,0.00020871151,0.00039528392,0.00014007658,0.00019418276],"category_scores_gemma":[0.000016128157,0.0003995758,0.00027505326,0.00009841795,0.000028796883,0.00027127017,0.000039280527,0.00038696005,0.000017823157],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0002999226,0.00023708177,0.00010041468,0.00006729852,0.0002320063,5.191945e-7,0.0013596838,0.015090884,0.9320837,0.045149557,0.0045167725,0.00086215785],"study_design_scores_gemma":[0.0028035315,0.00034926838,0.0000035377604,0.000020612135,0.00013765389,0.0000016903637,0.00025955003,0.26407787,0.51274574,0.18882664,0.029928355,0.000845556],"about_ca_topic_score_codex":0.00005212574,"about_ca_topic_score_gemma":0.00012999146,"teacher_disagreement_score":0.6320402,"about_ca_system_score_codex":0.00006429362,"about_ca_system_score_gemma":0.00053600984,"threshold_uncertainty_score":0.9998456},"labels":[],"label_agreement":null},{"id":"W2108852686","doi":"10.1016/j.sse.2012.04.026","title":"Factors for the polarization lifetime in metal–ferroelectric–insulator–semiconductor capacitors","year":2012,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"Ferroelectric and Piezoelectric Materials","field":"Materials Science","cited_by":4,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Geological Survey of Canada","funders":"","keywords":"Capacitor; Ferroelectricity; Materials science; Semiconductor; Polarization (electrochemistry); Insulator (electricity); Optoelectronics; Ferroelectric capacitor; Metal; Electrical engineering; Voltage; Engineering; Metallurgy; Dielectric; Chemistry","score_opus":0.02692157668971335,"score_gpt":0.27566529881474106,"score_spread":0.2487437221250277,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2108852686","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9865029,0.0054476815,0.004573835,0.00016941364,0.0016122647,0.0012895077,0.0000846496,0.00018585743,0.0001339312],"genre_scores_gemma":[0.99754274,0.00026640718,0.00015094885,0.000215577,0.00042762398,0.00019069869,0.00008203736,0.0000995867,0.0010243995],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99559736,0.00031807323,0.00080898794,0.0005291684,0.00048489985,0.0022615353],"domain_scores_gemma":[0.9978454,0.0008707715,0.0003624728,0.000537033,0.00015123068,0.00023305148],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.001833491,0.0005225828,0.0006323585,0.0002839334,0.00042703684,0.0001601657,0.00066562224,0.00024139033,0.00034345943],"category_scores_gemma":[0.0006930278,0.0003710993,0.00019465921,0.001079555,0.000097560405,0.00066654786,0.0000627565,0.00039998614,0.00008526261],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00014603311,0.0002032553,0.0037928447,0.000048344256,0.0000808527,8.1806525e-7,0.0018398799,0.00017445545,0.98727614,0.004130381,0.0010429239,0.0012640909],"study_design_scores_gemma":[0.00100146,0.0004632952,0.003425882,0.000014815171,0.00014934021,0.0000128740585,0.00015184145,0.0029641164,0.9722525,0.0022317208,0.016514538,0.000817601],"about_ca_topic_score_codex":0.00019329086,"about_ca_topic_score_gemma":0.000097438686,"teacher_disagreement_score":0.015471613,"about_ca_system_score_codex":0.00055463146,"about_ca_system_score_gemma":0.00043562392,"threshold_uncertainty_score":0.9998741},"labels":[],"label_agreement":null},{"id":"W2114574737","doi":"10.1016/j.sse.2005.02.004","title":"Accurate modeling and parameter extraction method for organic TFTs","year":2005,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":153,"is_retracted":false,"has_abstract":false,"route_ca_aff":false,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"","funders":"Consejo Nacional de Ciencia y Tecnología; Generalitat de Catalunya; McMaster University","keywords":"Extraction (chemistry); Thin-film transistor; Materials science; Transistor; Transconductance; Organic semiconductor; Biological system; Computer science; Optoelectronics; Nanotechnology; Electrical engineering; Chromatography; Chemistry","score_opus":0.014231714339791396,"score_gpt":0.2838989474016144,"score_spread":0.26966723306182305,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2114574737","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.22296385,0.0029951637,0.772343,0.00024380392,0.00011987059,0.0002554516,0.00001109012,0.0010045145,0.0000633057],"genre_scores_gemma":[0.92135847,0.0014327145,0.076869495,0.00004402331,0.00005067104,0.000055855355,0.000009519356,0.000086462984,0.00009280272],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99878556,0.000017666996,0.00026292208,0.00026011592,0.00009896751,0.00057476625],"domain_scores_gemma":[0.9995161,0.00011427703,0.00003495996,0.00023705605,0.00004683841,0.00005075438],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00022229577,0.00022205913,0.00023214695,0.00011212975,0.00008753666,0.000053986245,0.0001425856,0.00015574461,0.000010060315],"category_scores_gemma":[0.000060304184,0.00023587998,0.000060164188,0.00014640964,0.00001787737,0.00030524418,0.000016464459,0.00038061597,0.000011289721],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000041046504,0.000021217304,0.0000038426165,0.00009352372,0.00012276185,0.0000017290904,0.00044487877,0.7293195,0.2050528,0.00095759996,0.0002644929,0.063676625],"study_design_scores_gemma":[0.00032173964,0.000061038045,0.0000042620154,0.000008529772,0.000039193194,0.000018180257,0.00003479321,0.8659256,0.114424855,0.0056502926,0.013258508,0.00025301715],"about_ca_topic_score_codex":0.00000247887,"about_ca_topic_score_gemma":0.00021005487,"teacher_disagreement_score":0.6983946,"about_ca_system_score_codex":0.0002603246,"about_ca_system_score_gemma":0.000035817502,"threshold_uncertainty_score":0.9618907},"labels":[],"label_agreement":null},{"id":"W2115856956","doi":"10.1016/j.sse.2006.04.017","title":"Monitoring the self-heating in a high frequency GaN HFET","year":2006,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":1,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Institute for Microstructural Sciences","funders":"","keywords":"Materials science; Optoelectronics","score_opus":0.006914204277505058,"score_gpt":0.24263794394562396,"score_spread":0.2357237396681189,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2115856956","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9966161,0.0004266051,0.000080660895,0.00013719118,0.00031762163,0.00024939075,0.000024664483,0.00007333234,0.002074382],"genre_scores_gemma":[0.9987106,0.000032806318,0.0002760622,0.000030513806,0.0006478511,0.00005116808,0.00003672986,0.000039900086,0.00017440393],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9983488,0.000084382365,0.0003884742,0.00027832776,0.00015892023,0.00074112567],"domain_scores_gemma":[0.9994024,0.00006587559,0.00015312676,0.00028599257,0.00004800055,0.000044593493],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00027456574,0.00022540259,0.00024453396,0.000055239,0.00017243694,0.00012490155,0.00024961392,0.000042255095,0.00009068377],"category_scores_gemma":[0.0000028446009,0.00018006953,0.00007477385,0.00022566193,0.000022824326,0.00014758784,0.000029670315,0.0002996131,0.00003086401],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00003776217,0.00050186133,0.32351518,0.00010313782,0.00021645156,0.000020415413,0.0020425082,0.0069782026,0.5916549,0.06803959,0.00041469035,0.0064753075],"study_design_scores_gemma":[0.002302393,0.00020889993,0.025370061,0.00016772818,0.0001092963,0.0000051709135,0.00092086376,0.0010450326,0.77305174,0.18901514,0.0066313795,0.0011723012],"about_ca_topic_score_codex":0.0039304364,"about_ca_topic_score_gemma":0.00024680304,"teacher_disagreement_score":0.29814512,"about_ca_system_score_codex":0.00012767292,"about_ca_system_score_gemma":0.00018758778,"threshold_uncertainty_score":0.7343022},"labels":[],"label_agreement":null},{"id":"W2131132315","doi":"10.1016/j.sse.2004.05.033","title":"Degradation and recovery of SiGe HBTs following radiation and hot-carrier stressing","year":2004,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"Semiconductor materials and devices","field":"Engineering","cited_by":5,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"ON Semiconductor (Canada); National Research Council Canada; Institute for Microstructural Sciences","funders":"","keywords":"Materials science; Degradation (telecommunications); Irradiation; Optoelectronics; Radiation; Stress (linguistics); Radiation damage; Composite material; Electrical engineering; Optics","score_opus":0.006264558053931052,"score_gpt":0.22306427755740066,"score_spread":0.2167997195034696,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2131132315","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9913394,0.0075987624,0.00060301565,0.000013015019,0.00020846892,0.00008325548,0.000012976863,0.00006404921,0.00007705774],"genre_scores_gemma":[0.99738955,0.0021607247,0.0003494107,0.0000136535555,0.000027370574,0.0000031829911,0.000023215169,0.000023927883,0.000008959219],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9993895,0.000012570128,0.00018253754,0.00012289041,0.000082233535,0.00021021864],"domain_scores_gemma":[0.999793,0.000023554792,0.000048266786,0.00008072457,0.0000139925705,0.000040456438],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00008785606,0.000110297115,0.0001562559,0.000060079754,0.00004666715,0.000058006255,0.000033056916,0.000052846342,0.0000035282392],"category_scores_gemma":[0.000015305417,0.00011457075,0.000024750512,0.00007670124,0.000013905359,0.00030265926,0.000010760724,0.00006877167,5.907366e-7],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00002998028,0.000011733578,0.00083011086,0.00018215708,0.0001159175,0.000004743925,0.0015030561,0.01816496,0.96161884,0.0004405633,0.00002180596,0.017076138],"study_design_scores_gemma":[0.0013154919,0.00015409749,0.0028820967,0.00015165599,0.000077166354,0.00001608776,0.00021817566,0.005642425,0.97932816,0.00893681,0.0008579471,0.00041988472],"about_ca_topic_score_codex":0.000038917966,"about_ca_topic_score_gemma":0.00006152757,"teacher_disagreement_score":0.017709328,"about_ca_system_score_codex":0.00007333051,"about_ca_system_score_gemma":0.000037936294,"threshold_uncertainty_score":0.46720597},"labels":[],"label_agreement":null},{"id":"W2620552952","doi":"10.1016/j.sse.2017.05.008","title":"Submillimeter wave GaAs Schottky diode application based study and optimization for 0.1–1.5 THz","year":2017,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"Superconducting and THz Device Technology","field":"Physics and Astronomy","cited_by":12,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"École de Technologie Supérieure; Université de Sherbrooke","funders":"","keywords":"Schottky diode; Parasitic capacitance; Terahertz radiation; Capacitance; Materials science; Optoelectronics; Diode; Microfabrication; Varicap; Diffusion capacitance; Parasitic extraction; Anode; Physics; Fabrication; Electrode","score_opus":0.0182920698491119,"score_gpt":0.2902405039943199,"score_spread":0.271948434145208,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2620552952","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.8251107,0.00008518028,0.17338444,0.0003202011,0.0000697425,0.0007576189,0.000022860468,0.000082271865,0.00016700166],"genre_scores_gemma":[0.9963355,0.000009790838,0.0030521806,0.00003958551,0.00009783528,0.0002638968,0.000075285614,0.00003617684,0.000089752386],"study_design_codex":"observational","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.998905,0.000029253886,0.00019673927,0.00037795314,0.000088653556,0.0004023975],"domain_scores_gemma":[0.9990268,0.000053912856,0.00015945242,0.0006027629,0.00010423172,0.000052879957],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00024807587,0.0001781326,0.00021437767,0.00006487728,0.0005809474,0.000147087,0.00020776884,0.00005723189,0.000025408515],"category_scores_gemma":[0.000022805805,0.0001735365,0.000058771933,0.000054375745,0.000055673197,0.00019646523,0.000051963216,0.00019814789,0.0000059731965],"study_design_candidate":"simulation_or_modeling","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00027936453,0.0026726234,0.45983505,0.00017747241,0.0016072921,0.0000065624463,0.0038459895,0.02165504,0.01925947,0.033382908,0.00043310906,0.45684513],"study_design_scores_gemma":[0.009026376,0.0018527721,0.003823297,0.000040817995,0.000509554,0.00000465347,0.0052203457,0.8545679,0.07667482,0.03817486,0.008546241,0.0015583681],"about_ca_topic_score_codex":0.00012061258,"about_ca_topic_score_gemma":0.00008721889,"teacher_disagreement_score":0.83291286,"about_ca_system_score_codex":0.000037651665,"about_ca_system_score_gemma":0.00007412552,"threshold_uncertainty_score":0.7076613},"labels":[],"label_agreement":null},{"id":"W2766496230","doi":"10.1016/j.sse.2017.10.023","title":"TiOx-based thin-film transistors prepared by femtosecond laser pre-annealing","year":2017,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":false,"route_ca_aff":false,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"","funders":"Institute for Information and Communications Technology Promotion; Information Technology Research Centre; Ministry of Trade, Industry and Energy; Ministry of Education and Human Resources Development; Korea Institute of Energy Technology Evaluation and Planning; Ministry of Education; Ministry of Science, ICT and Future Planning; National Research Foundation of Korea","keywords":"Materials science; Thin-film transistor; Femtosecond; Annealing (glass); Optoelectronics; Amorphous solid; Semiconductor; Laser; Thin film; Transistor; Nanotechnology; Optics; Layer (electronics); Composite material; Crystallography; Electrical engineering","score_opus":0.006940705987001145,"score_gpt":0.2320266925190488,"score_spread":0.22508598653204767,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2766496230","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.97103024,0.005340362,0.012830909,0.00049574906,0.0009518186,0.0007138503,0.00035382944,0.0040548467,0.0042283735],"genre_scores_gemma":[0.9971387,0.00045753512,0.00080011593,0.000090556576,0.000048001242,0.0000917726,0.00008908716,0.00019245976,0.0010917633],"study_design_codex":"simulation_or_modeling","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99729264,0.00004146446,0.00051957817,0.0005661143,0.0003536427,0.001226585],"domain_scores_gemma":[0.9980355,0.000068417015,0.0001611352,0.001500747,0.000075626325,0.00015857938],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.00029896898,0.00053947815,0.00052637316,0.0001591375,0.00056009804,0.00024677542,0.0011707015,0.000345014,0.00008062507],"category_scores_gemma":[0.00008632537,0.0005974454,0.00022985975,0.00013841833,0.00021816374,0.00044876058,0.00003816569,0.000883256,0.00005484933],"study_design_candidate":"simulation_or_modeling","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0003276749,0.00020984326,0.0005786549,0.00073176244,0.0007924722,0.00007272251,0.0031255637,0.81781477,0.1161339,0.00049314665,0.05021855,0.009500975],"study_design_scores_gemma":[0.0020521022,0.00030010493,0.00048925914,0.000092736715,0.00014821558,0.0000100425195,0.00008969357,0.19468682,0.66265076,0.0019062788,0.13615818,0.0014157807],"about_ca_topic_score_codex":0.000049495626,"about_ca_topic_score_gemma":0.0009904245,"teacher_disagreement_score":0.62312794,"about_ca_system_score_codex":0.0005691101,"about_ca_system_score_gemma":0.00017723876,"threshold_uncertainty_score":0.9996477},"labels":[],"label_agreement":null},{"id":"W2899193540","doi":"10.1016/j.sse.2019.03.002","title":"Electronic structure, magnetoexcitons and valley polarized electron gas in 2D crystals","year":2019,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"2D Materials and Applications","field":"Materials Science","cited_by":6,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Ottawa","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Zeeman effect; Landau quantization; Condensed matter physics; Exciton; Physics; Dirac fermion; Monolayer; Electron; Fermi gas; Magnetic field; Point reflection; Electronic structure; Band gap; Graphene; Materials science; Quantum mechanics; Nanotechnology","score_opus":0.004269916361686346,"score_gpt":0.23982649200980025,"score_spread":0.2355565756481139,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2899193540","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9956666,0.0018781112,0.00020650319,0.0004951338,0.00016504794,0.00086863455,0.00008052438,0.0001511141,0.00048832933],"genre_scores_gemma":[0.9968869,0.001302388,0.00034702366,0.00028706732,0.00007626526,0.000065163906,0.0000638001,0.00007352602,0.0008978477],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99646944,0.0001602816,0.0005639055,0.0007771462,0.00031354645,0.0017156809],"domain_scores_gemma":[0.9989066,0.00008487281,0.00020562368,0.00057978526,0.00007258409,0.00015050954],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.00052752276,0.0003920546,0.0005471957,0.00017094365,0.00015569005,0.0002314257,0.00042769779,0.00016735961,0.0008428317],"category_scores_gemma":[0.00002829319,0.00037810576,0.00006901843,0.0003752751,0.00008892974,0.00031415332,0.00013964446,0.0004481787,0.00020606922],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00009676907,0.00005439273,0.00022763015,0.000038783117,0.000012716613,0.0000022420077,0.00015363598,0.000118706004,0.98317474,0.015784552,0.000115441006,0.00022039963],"study_design_scores_gemma":[0.00206487,0.00072734,0.0014377418,0.000031747502,0.000039549872,0.000064800195,0.000050503502,0.00077277154,0.8728721,0.09648526,0.02465865,0.00079468294],"about_ca_topic_score_codex":0.00017368405,"about_ca_topic_score_gemma":0.00097171316,"teacher_disagreement_score":0.11030264,"about_ca_system_score_codex":0.00034834468,"about_ca_system_score_gemma":0.000526762,"threshold_uncertainty_score":0.9998671},"labels":[],"label_agreement":null},{"id":"W2964245630","doi":"10.1016/j.sse.2015.05.042","title":"Efficiency analysis of betavoltaic elements","year":2015,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"Advanced Energy Technologies and Civil Engineering Innovations","field":"Energy","cited_by":28,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Ontario Tech University","funders":"","keywords":"Electron; Atomic physics; Flux (metallurgy); Range (aeronautics); Energy conversion efficiency; Diffusion; Plasma; Physics; Materials science; Nuclear physics; Optoelectronics","score_opus":0.014083967746901987,"score_gpt":0.2698898730591942,"score_spread":0.2558059053122922,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2964245630","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.7304255,0.0016001246,0.25058183,0.00018303005,0.00026221582,0.00015386786,0.000036997633,0.00084507803,0.015911397],"genre_scores_gemma":[0.997036,0.00016865208,0.001984086,0.000038335937,0.000013143293,0.000018207724,0.00008528661,0.000025840276,0.0006304454],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9986175,0.000013116,0.00041009713,0.00022155518,0.00024600996,0.00049175223],"domain_scores_gemma":[0.9991426,0.000023197768,0.0001469195,0.00043168876,0.00019563297,0.000059945916],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00018083036,0.000157959,0.00030683677,0.0004417519,0.000047294412,0.000009988785,0.00029013134,0.00007346223,0.000034107372],"category_scores_gemma":[0.00010527917,0.00015465873,0.00010882682,0.0029264016,0.000050393777,0.00007970738,0.00006557015,0.00017390441,0.000010061106],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000009138693,0.00006427374,0.00041181056,0.0000048628563,0.0005468291,0.0000016526498,0.00007700845,0.860089,0.0024860108,0.12612727,0.00015590155,0.010026257],"study_design_scores_gemma":[0.0016329763,0.0009034425,0.0011968284,0.00001965318,0.0011205045,0.0000037068903,0.00052361743,0.54020643,0.06829448,0.06831759,0.31673086,0.0010499052],"about_ca_topic_score_codex":0.00007779242,"about_ca_topic_score_gemma":0.0006154567,"teacher_disagreement_score":0.31988254,"about_ca_system_score_codex":0.00018574411,"about_ca_system_score_gemma":0.00010397584,"threshold_uncertainty_score":0.63068},"labels":[],"label_agreement":null},{"id":"W2969451192","doi":"10.1016/j.sse.2019.107634","title":"Optimization of deep well gate-controlled dual direction SCR device for ESD protection in 0.5 μm CMOS process","year":2019,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"Electrostatic Discharge in Electronics","field":"Engineering","cited_by":6,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Western University","funders":"Hunan Normal University; National Natural Science Foundation of China","keywords":"Electrostatic discharge; CMOS; Voltage; Electrical engineering; Anode; Chip; Materials science; Optoelectronics; Electrode; Engineering; Chemistry","score_opus":0.005007177058613267,"score_gpt":0.2350283304862418,"score_spread":0.23002115342762855,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2969451192","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.8122681,0.0022154178,0.17642069,0.000115282084,0.0005143834,0.0060897707,0.00001990973,0.00052812847,0.001828327],"genre_scores_gemma":[0.9966008,0.00057678914,0.0012063938,0.000032142194,0.00006268148,0.0008981546,0.00010332859,0.0001674806,0.00035219363],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9971019,0.00008585975,0.0008529365,0.0004563337,0.00035188987,0.0011510551],"domain_scores_gemma":[0.99890846,0.00012776087,0.0002650341,0.00031953506,0.00030081687,0.00007840445],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.00064208196,0.00040956773,0.0007037618,0.0003504797,0.000075019605,0.000053394855,0.00020794476,0.0002129101,0.00005803933],"category_scores_gemma":[0.00011273045,0.00044182112,0.00015164864,0.0008639962,0.000028022374,0.00045201188,0.000016699561,0.0005462998,0.000026875128],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000691777,0.000119156924,0.00009484911,0.0004983086,0.00014207033,8.19093e-7,0.0005190916,0.97122353,0.023942498,0.00032657958,0.00002545044,0.0024158373],"study_design_scores_gemma":[0.004792786,0.0006621511,0.000017796567,0.00006384964,0.000060734805,0.000009138083,0.00007555502,0.88305753,0.10798244,0.0022162811,0.0006452685,0.00041644147],"about_ca_topic_score_codex":0.000020357496,"about_ca_topic_score_gemma":0.0005740614,"teacher_disagreement_score":0.18433274,"about_ca_system_score_codex":0.0007242808,"about_ca_system_score_gemma":0.00027468748,"threshold_uncertainty_score":0.99980336},"labels":[],"label_agreement":null},{"id":"W2990340554","doi":"10.1016/j.sse.2019.107737","title":"In-situ heater for thermal assist recovery of MOS devices in 28 nm UTBB FD-SOI CMOS technology","year":2019,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"Semiconductor materials and devices","field":"Engineering","cited_by":4,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Institut interdisciplinaire d'innovation technologique; Université de Sherbrooke","funders":"","keywords":"Wafer; Materials science; NMOS logic; CMOS; Optoelectronics; Silicon on insulator; Thermal; Transistor; Gate oxide; Resistor; Oxide; Silicon; Electrical engineering; Electronic engineering; Voltage; Engineering","score_opus":0.006022375635875895,"score_gpt":0.23245033251071184,"score_spread":0.22642795687483594,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2990340554","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9960047,0.0020925645,0.000044749326,0.00010344692,0.00042162056,0.0004256792,0.000024047602,0.000103650455,0.00077955815],"genre_scores_gemma":[0.9990479,0.00029051915,0.00027678898,0.00008661598,0.000043984368,0.00006351424,0.000019045105,0.00005943516,0.00011222529],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.998484,0.000022987975,0.00049047923,0.00025842217,0.00009948377,0.00064461585],"domain_scores_gemma":[0.99951005,0.000060452956,0.00008518086,0.00027376844,0.00003996202,0.00003055942],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00022815117,0.00022260095,0.00044613637,0.0002733119,0.000016346119,0.00002926078,0.000241797,0.00019298148,0.00006475003],"category_scores_gemma":[0.000010576317,0.0002151222,0.00006454763,0.0002844652,0.00002827977,0.0002527707,0.000039298873,0.00021420019,0.00003545682],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000094380186,0.000041237014,0.004565983,0.00035141583,0.00005894877,0.000004353936,0.00021321228,0.007308428,0.9851069,0.00045587658,0.000098908844,0.0017003798],"study_design_scores_gemma":[0.0011935555,0.00028096786,0.0017715798,0.00010449424,0.000016732343,0.0000074750114,0.00013098477,0.0036376398,0.9786524,0.0039023485,0.009894795,0.00040700228],"about_ca_topic_score_codex":0.000033967266,"about_ca_topic_score_gemma":0.0009373007,"teacher_disagreement_score":0.009795886,"about_ca_system_score_codex":0.00016774297,"about_ca_system_score_gemma":0.00007681373,"threshold_uncertainty_score":0.87724286},"labels":[],"label_agreement":null},{"id":"W2992230486","doi":"10.1016/j.sse.2019.107728","title":"Optimization of GaAs/AlGaAs staircase avalanche photodiodes accounting for both electron and hole impact ionization","year":2019,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"Radiation Detection and Scintillator Technologies","field":"Physics and Astronomy","cited_by":5,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Saskatchewan","funders":"Ministero dell’Istruzione, dell’Università e della Ricerca","keywords":"Avalanche photodiode; Impact ionization; Heterojunction; Avalanche diode; Optoelectronics; Photodiode; Noise (video); Ionization; Electron; Physics; Avalanche breakdown; Materials science; Breakdown voltage; Optics; Voltage; Computer science; Nuclear physics; Quantum mechanics","score_opus":0.00527627793601455,"score_gpt":0.2597609331708716,"score_spread":0.2544846552348571,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W2992230486","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.950872,0.0002754048,0.047698863,0.00005446903,0.00006961895,0.0005493521,0.00004239207,0.0001019497,0.00033594476],"genre_scores_gemma":[0.99874014,0.00010198244,0.0007217266,0.000016958624,0.000041597916,0.0000285102,0.000046657853,0.00003193234,0.00027051946],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99889237,0.000026495902,0.0002908777,0.0002653487,0.00013205117,0.00039286815],"domain_scores_gemma":[0.9992687,0.00005544718,0.00027942247,0.00021009924,0.00014488408,0.000041464402],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00020533027,0.0001779381,0.00024855937,0.00014951035,0.00011865739,0.000076952805,0.00010083481,0.00006860808,0.000109200664],"category_scores_gemma":[0.000020867174,0.00016910362,0.00009695364,0.00028383324,0.000033955457,0.00025889496,0.000018763345,0.00015351544,0.000004672378],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00018438831,0.000104886414,0.03779452,0.00008200397,0.00023892608,1.9599784e-7,0.00042906968,0.9100709,0.032311495,0.0050861263,0.00053211383,0.013165378],"study_design_scores_gemma":[0.00210489,0.0007967689,0.0017288083,0.000029088815,0.00006256094,0.0000029178711,0.00043912683,0.7118122,0.27485532,0.0049495245,0.002705987,0.00051280437],"about_ca_topic_score_codex":0.000025166035,"about_ca_topic_score_gemma":0.0000057431066,"teacher_disagreement_score":0.24254382,"about_ca_system_score_codex":0.000095938434,"about_ca_system_score_gemma":0.00014523494,"threshold_uncertainty_score":0.6895845},"labels":[],"label_agreement":null},{"id":"W3045366189","doi":"10.1016/j.sse.2020.107869","title":"New accurate approximation of the Einstein Relation for heavily-doped semiconductor devices","year":2020,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"Advanced Materials and Semiconductor Technologies","field":"Materials Science","cited_by":3,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Waterloo","funders":"","keywords":"Einstein relation; Einstein; Degeneracy (biology); Doping; Relation (database); Semiconductor; Scaling; Physics; Quality (philosophy); Fermi Gamma-ray Space Telescope; Constant (computer programming); Condensed matter physics; Theoretical physics; Statistical physics; Quantum mechanics; Mathematics; Computer science; Geometry; Data mining; Bioinformatics","score_opus":0.029004150118666385,"score_gpt":0.2793643605244826,"score_spread":0.25036021040581624,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3045366189","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.981836,0.0006523925,0.014479799,0.0015686011,0.00034378972,0.0007555136,0.00008881805,0.00022140042,0.000053665353],"genre_scores_gemma":[0.99294865,0.00012726863,0.006334228,0.00026097256,0.00009392788,0.000035126195,0.000027697937,0.0000331381,0.00013898726],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.99851507,0.000055986176,0.0004792577,0.0003438961,0.00019221973,0.00041358368],"domain_scores_gemma":[0.9989982,0.00007082713,0.00044633992,0.0003102044,0.00011296174,0.0000614563],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00019972303,0.00019683239,0.00030706121,0.00003057495,0.00014341882,0.00006093986,0.0004781964,0.000107793174,0.0000685267],"category_scores_gemma":[0.00027123097,0.0001440762,0.00008666493,0.00024201791,0.00007063444,0.0004421602,0.00011073551,0.00014155521,0.000015354597],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00008519398,0.00000973032,0.000019836072,0.000085968975,0.0000090030235,1.562776e-7,0.0004373124,0.0011686567,0.9924342,0.004491412,0.00044923087,0.00080931257],"study_design_scores_gemma":[0.0004596077,0.00016991934,0.00003236413,0.000026526312,0.000023306084,0.0000017460723,0.0001376106,0.001461915,0.9759322,0.015293057,0.006289741,0.00017204454],"about_ca_topic_score_codex":0.00001397241,"about_ca_topic_score_gemma":0.000034779612,"teacher_disagreement_score":0.016502025,"about_ca_system_score_codex":0.000086505206,"about_ca_system_score_gemma":0.00025336695,"threshold_uncertainty_score":0.5875257},"labels":[],"label_agreement":null},{"id":"W3172281394","doi":"10.1016/j.sse.2021.108122","title":"Modeling current and voltage peaks generation in complementary resistive switching devices","year":2021,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"Advanced Memory and Neural Computing","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Institut interdisciplinaire d'innovation technologique; Université de Sherbrooke","funders":"","keywords":"Joule heating; Electromigration; Resistive random-access memory; Resistive touchscreen; Materials science; Voltage; Current (fluid); Coupling (piping); Optoelectronics; Electrical engineering; Engineering","score_opus":0.025775552069748835,"score_gpt":0.2871871212384757,"score_spread":0.2614115691687268,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W3172281394","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.8857425,0.010243434,0.103637956,0.000025881638,0.0001332492,0.00008397205,0.0000045757956,0.000078720695,0.000049703318],"genre_scores_gemma":[0.99747455,0.0016751735,0.0006105901,0.000044606837,0.00009576773,0.0000052133882,0.000061941915,0.000024166908,0.000007978674],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99904054,0.00003160686,0.0002425593,0.00022760431,0.000091198766,0.00036647118],"domain_scores_gemma":[0.9997699,0.000029706103,0.000022336018,0.000100399775,0.00003234237,0.000045287215],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00012479498,0.00014363971,0.0001548401,0.000055228647,0.00011657,0.00003771026,0.00005512196,0.00002273654,0.0000044641843],"category_scores_gemma":[0.000012623193,0.0001648232,0.000023628256,0.00014244136,0.0000055081805,0.00018534287,0.00004999293,0.0003575288,0.0000014495247],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0000068296786,0.000010372812,0.00009232684,0.000067845096,0.000013448456,0.000019438194,0.0005182406,0.88217604,0.093889624,0.00023074925,0.000014586601,0.022960473],"study_design_scores_gemma":[0.00026077047,0.00001825856,0.00005120539,0.00004494448,0.000008373962,0.0000083993755,0.000114859045,0.94865066,0.04849319,0.0013179808,0.00084866397,0.00018266264],"about_ca_topic_score_codex":0.000005199624,"about_ca_topic_score_gemma":0.0009408169,"teacher_disagreement_score":0.11173205,"about_ca_system_score_codex":0.00013558773,"about_ca_system_score_gemma":0.000038025144,"threshold_uncertainty_score":0.6721295},"labels":[],"label_agreement":null},{"id":"W4285605754","doi":"10.1016/j.sse.2022.108420","title":"Modeling of forward gate leakage current for normally off pGaN/AlGaN/GaN HEMTs","year":2022,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":9,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McMaster University","funders":"","keywords":"Materials science; Optoelectronics; Leakage (economics); High-electron-mobility transistor; Electrical engineering; Electronic engineering; Transistor; Engineering; Voltage","score_opus":0.014534458245876689,"score_gpt":0.2737827176893747,"score_spread":0.259248259443498,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4285605754","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9837007,0.0012902791,0.01243694,0.00009712384,0.0005954737,0.00068317907,0.000781561,0.000053546893,0.0003612265],"genre_scores_gemma":[0.9984768,0.0000874289,0.00016416839,0.000062377425,0.00018400625,0.00019410797,0.00048277102,0.00007242277,0.00027594215],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9978478,0.0000688652,0.00058660825,0.00038921714,0.00027703983,0.0008304825],"domain_scores_gemma":[0.99908113,0.000042071133,0.0002749107,0.00034727657,0.00014445306,0.000110151275],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.00040204916,0.00028733435,0.000459449,0.000097276075,0.00030584392,0.000049583225,0.00038543736,0.000027517457,0.0002921491],"category_scores_gemma":[0.0000048191255,0.00030295664,0.00027294658,0.0001711906,0.00002575065,0.0001457427,0.00012594138,0.0003063675,0.000007912088],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00067158206,0.0009162867,0.000481987,0.0005569442,0.0006395026,0.0000033706426,0.0028081655,0.61620295,0.32164383,0.027315423,0.0019020621,0.026857886],"study_design_scores_gemma":[0.004791347,0.001091402,0.000017672646,0.00007688789,0.00035971933,0.000005427678,0.0013121305,0.45270437,0.31031612,0.05068911,0.17710426,0.001531538],"about_ca_topic_score_codex":0.00008252588,"about_ca_topic_score_gemma":0.000035665933,"teacher_disagreement_score":0.1752022,"about_ca_system_score_codex":0.00011477208,"about_ca_system_score_gemma":0.00041444553,"threshold_uncertainty_score":0.99994224},"labels":[],"label_agreement":null},{"id":"W4293032730","doi":"10.1016/j.sse.2022.108438","title":"Tunneling leakage in ultrashort-channel MOSFETs—From atomistics to continuum modeling","year":2022,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"Semiconductor materials and devices","field":"Engineering","cited_by":3,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"McGill University; Nanoacademic Technologies","funders":"National Research Council Canada; Natural Sciences and Engineering Research Council of Canada; Fonds de recherche du Québec – Nature et technologies; Alliance de recherche numérique du Canada","keywords":"Leakage (economics); Quantum tunnelling; Optoelectronics; Materials science; Physics","score_opus":0.010732386563883298,"score_gpt":0.22467900709717606,"score_spread":0.21394662053329278,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4293032730","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9891499,0.0020196,0.0067851436,0.000039462288,0.00086284295,0.0002880981,0.00020886277,0.0003288783,0.0003171817],"genre_scores_gemma":[0.998691,0.00034554847,0.00023386121,0.00020789713,0.00014573838,0.00009538818,0.000111300076,0.0001105788,0.00005864912],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9979869,0.000050894283,0.00050452125,0.0003698899,0.00025757475,0.00083020504],"domain_scores_gemma":[0.99943465,0.000060392365,0.00004159113,0.00029763702,0.000036995803,0.00012871675],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.00031208032,0.0002813868,0.0003822615,0.00015614604,0.00013394107,0.00008518424,0.00032904663,0.00006135907,0.0001370908],"category_scores_gemma":[0.000028968774,0.00033959895,0.000064879154,0.00031483916,0.000009389635,0.00011441794,0.00011114271,0.00046686808,0.000027501845],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000030328125,0.00002005088,0.00004707734,0.000020893614,0.00003193556,0.000019530868,0.0010507635,0.80085886,0.1973547,0.00006808931,0.00032767712,0.00017008992],"study_design_scores_gemma":[0.0005981797,0.00009363245,0.000026309399,0.000030954823,0.000024801982,0.000010002322,0.000817211,0.9286838,0.057684723,0.005997428,0.0053680083,0.0006649312],"about_ca_topic_score_codex":0.00018472846,"about_ca_topic_score_gemma":0.00068407995,"teacher_disagreement_score":0.13966998,"about_ca_system_score_codex":0.00042665924,"about_ca_system_score_gemma":0.00007963756,"threshold_uncertainty_score":0.9999056},"labels":[],"label_agreement":null},{"id":"W4308344324","doi":"10.1016/j.sse.2022.108506","title":"An atomistic modeling framework for valence change memory cells","year":2022,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"Advanced Memory and Neural Computing","field":"Engineering","cited_by":5,"is_retracted":false,"has_abstract":false,"route_ca_aff":false,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"","funders":"Natural Sciences and Engineering Research Council of Canada; National Supercomputing Center, Korea Institute of Science and Technology Information; Schweizerischer Nationalfonds zur Förderung der Wissenschaftlichen Forschung; Werner Siemens-Stiftung","keywords":"Conductance; Quantum tunnelling; Valence (chemistry); Materials science; Resistive random-access memory; Ab initio; Tin; Hysteresis; Condensed matter physics; Kinetic Monte Carlo; Diffusion; Chemical physics; Electrode; Monte Carlo method; Nanotechnology; Chemistry; Optoelectronics; Physics; Thermodynamics","score_opus":0.02973627216023445,"score_gpt":0.2876106646047166,"score_spread":0.2578743924444822,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4308344324","genre_codex":"methods","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":null,"domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.341788,0.001802559,0.6546969,0.00002335168,0.0006091775,0.00047881345,0.00005167666,0.00051308516,0.000036432233],"genre_scores_gemma":[0.99345875,0.00027202797,0.005388461,0.0002203245,0.00024962984,0.00023625854,0.000030996427,0.00009414037,0.000049419752],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9985286,0.000039249804,0.00022694406,0.00030326835,0.00016447468,0.00073746586],"domain_scores_gemma":[0.9994136,0.000116033334,0.00004244428,0.00029841653,0.000027223088,0.00010227912],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.00021787242,0.0002063571,0.00020386268,0.00006348667,0.00040326064,0.000024684467,0.00030423602,0.000044222434,0.000026507765],"category_scores_gemma":[0.000015819485,0.00025144534,0.00007594474,0.00020256039,0.000012453758,0.00017481405,0.000058824317,0.00061541604,0.000005434034],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000033318363,0.000018058457,9.626593e-7,0.00007201541,0.000013738728,0.000006671705,0.0006431348,0.9737421,0.017795721,0.001027581,0.000026860467,0.006619803],"study_design_scores_gemma":[0.00019611583,0.00020759483,3.9018346e-7,0.000013967347,0.000015632737,0.000009010746,0.000117840704,0.9267761,0.040951274,0.029746704,0.0016663664,0.0002990195],"about_ca_topic_score_codex":0.000001189033,"about_ca_topic_score_gemma":0.0000033554352,"teacher_disagreement_score":0.65167075,"about_ca_system_score_codex":0.00023848335,"about_ca_system_score_gemma":0.00003467849,"threshold_uncertainty_score":0.9999938},"labels":[],"label_agreement":null},{"id":"W4323364508","doi":"10.1016/j.sse.2023.108626","title":"Understanding conditions for the single electron regime in 28 nm FD-SOI quantum dots: Interpretation of experimental data with 3D quantum TCAD simulations","year":2023,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"Quantum and electron transport phenomena","field":"Physics and Astronomy","cited_by":6,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Nanoacademic Technologies; Institut quantique; Université de Sherbrooke","funders":"Natural Sciences and Engineering Research Council of Canada; Canada First Research Excellence Fund","keywords":"Quantum dot; Silicon on insulator; Electron; Quantum; Optoelectronics; Silicon; Materials science; Quantum computer; Nanotechnology; Physics; Quantum mechanics","score_opus":0.056515946174623216,"score_gpt":0.31763970054148466,"score_spread":0.2611237543668614,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4323364508","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.82856506,0.0009226527,0.16632745,0.0007084626,0.0001594777,0.0015696551,0.0010804851,0.0001665965,0.0005001422],"genre_scores_gemma":[0.99715036,0.000058991835,0.000074534066,0.00003283146,0.00006803426,0.0001117563,0.002316564,0.000071678216,0.00011527504],"study_design_codex":"theoretical_or_conceptual","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9976356,0.000070257294,0.00058590743,0.00050567486,0.00026851875,0.00093404204],"domain_scores_gemma":[0.9985388,0.00041866006,0.00028573192,0.00061399344,0.000072589515,0.000070230104],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.00038356043,0.00030138023,0.00036243763,0.00022702642,0.00035128064,0.00006953064,0.00047675482,0.00005558088,0.00005512665],"category_scores_gemma":[0.0000095910955,0.00025287352,0.00009477094,0.00082456646,0.00014689568,0.000449373,0.000051223695,0.000362322,0.000008984741],"study_design_candidate":"simulation_or_modeling","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0018330178,0.0014952334,0.0035230315,0.00014155438,0.0012942508,0.0000062301724,0.008454631,0.18398087,0.10293069,0.6924207,0.002520694,0.0013990907],"study_design_scores_gemma":[0.002384979,0.0013802199,0.00025973085,0.00010407862,0.00017450738,0.0000020620007,0.0037665088,0.8852052,0.018412217,0.08525106,0.0024919065,0.00056752365],"about_ca_topic_score_codex":0.00008453671,"about_ca_topic_score_gemma":0.00040207326,"teacher_disagreement_score":0.7012243,"about_ca_system_score_codex":0.00031801432,"about_ca_system_score_gemma":0.00036350515,"threshold_uncertainty_score":0.9999924},"labels":[],"label_agreement":null},{"id":"W4386696993","doi":"10.1016/j.sse.2023.108777","title":"Simulation process flow for the implementation of industry-standard FD-SOI quantum dot devices","year":2023,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":5,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Nanoacademic Technologies; Institut quantique; Université de Sherbrooke","funders":"Natural Sciences and Engineering Research Council of Canada; Canada First Research Excellence Fund","keywords":"Silicon on insulator; Quantum dot; Qubit; Fabrication; Optoelectronics; Process (computing); Quantum dot laser; Semiconductor device fabrication; Quantum computer; Flow (mathematics); Semiconductor; Materials science; Quantum; Silicon; Computer science; Electronic engineering; Physics; Nanotechnology; Engineering; Quantum mechanics; Mechanics","score_opus":0.023649902550605388,"score_gpt":0.3427472080202253,"score_spread":0.3190973054696199,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4386696993","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.88700795,0.0026409833,0.106969364,0.00012751296,0.00063604536,0.0016465441,0.00035628284,0.00053213595,0.000083178405],"genre_scores_gemma":[0.99894184,0.00045920807,0.00011812617,0.000041083174,0.00008803458,0.00012690984,0.00011252743,0.000057347665,0.000054938253],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99865884,0.000017877115,0.0003749487,0.00018652597,0.00026056875,0.0005012727],"domain_scores_gemma":[0.999265,0.00023685434,0.00011625603,0.00019752876,0.00014538268,0.000038981525],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00031533066,0.00017860517,0.00019489808,0.000078378755,0.00013692625,0.00003774372,0.00020857733,0.00009395741,0.000046979127],"category_scores_gemma":[0.00001783633,0.00015152765,0.00006152334,0.0004582126,0.000022340097,0.00023566683,0.000013279604,0.00023982406,0.0000068078307],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000020602722,0.000005548986,0.00028527327,0.00017233564,0.000114925904,4.2732293e-7,0.0009261177,0.9707187,0.003190895,0.0006062021,0.00030043806,0.02365855],"study_design_scores_gemma":[0.0007568931,0.00019013854,0.00019171613,0.000030552175,0.00007697621,7.283993e-7,0.0021842755,0.92878616,0.03294755,0.008854613,0.02570738,0.00027301788],"about_ca_topic_score_codex":0.0000044431977,"about_ca_topic_score_gemma":0.000096782125,"teacher_disagreement_score":0.11193387,"about_ca_system_score_codex":0.0001322083,"about_ca_system_score_gemma":0.0001045623,"threshold_uncertainty_score":0.6179118},"labels":[],"label_agreement":null},{"id":"W4386701110","doi":"10.1016/j.sse.2023.108779","title":"A tunable and versatile 28 nm FD-SOI crossbar output circuit for low power analog SNN inference with eNVM synapses","year":2023,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"Advanced Memory and Neural Computing","field":"Engineering","cited_by":6,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Institut interdisciplinaire d'innovation technologique; Université de Sherbrooke","funders":"Agence Nationale de la Recherche","keywords":"Silicon on insulator; Crossbar switch; Spin-transfer torque; Electrical engineering; Computer science; CMOS; Capacitance; Spice; Electronic engineering; Magnetoresistive random-access memory; Materials science; Engineering; Optoelectronics; Computer hardware; Physics; Silicon; Random access memory","score_opus":0.013545186228376362,"score_gpt":0.2519372507036726,"score_spread":0.23839206447529626,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4386701110","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.97824824,0.00072980876,0.019418452,0.000035372123,0.00012768139,0.00035493297,0.000044547356,0.0006455747,0.00039539702],"genre_scores_gemma":[0.99850595,0.0003537665,0.00020269092,0.00006087475,0.000043134736,0.000041091218,0.000041888547,0.0000697645,0.00068083615],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9983656,0.000016252015,0.00022108498,0.00034263547,0.000139836,0.0009145952],"domain_scores_gemma":[0.9993145,0.00023177074,0.000050731902,0.0002259518,0.000062837076,0.00011419932],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.00015199423,0.00026508368,0.00028800932,0.000108260574,0.00022412503,0.00007788166,0.0001541365,0.000072380244,0.000011219486],"category_scores_gemma":[0.00005533647,0.00025457458,0.00005092614,0.0003739003,0.00006276826,0.0002446851,0.000051464707,0.0003070334,0.000024123708],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00025985864,0.00005763783,0.0006606943,0.000802526,0.00035397534,0.00016900027,0.0034058243,0.91585463,0.057778623,0.0027055896,0.0020232555,0.015928403],"study_design_scores_gemma":[0.0064877523,0.0040078503,0.0026044797,0.00058873993,0.00021752826,0.00019808243,0.0010660664,0.489673,0.36195463,0.037486352,0.09197882,0.0037367344],"about_ca_topic_score_codex":0.000003164895,"about_ca_topic_score_gemma":0.00003845452,"teacher_disagreement_score":0.42618164,"about_ca_system_score_codex":0.000104387254,"about_ca_system_score_gemma":0.00008695149,"threshold_uncertainty_score":0.99999064},"labels":[],"label_agreement":null},{"id":"W4392104198","doi":"10.1016/j.sse.2024.108883","title":"Analysis and 3D TCAD simulations of single-qubit control in an industrially-compatible FD-SOI device","year":2024,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"Quantum and electron transport phenomena","field":"Physics and Astronomy","cited_by":5,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Nanoacademic Technologies","funders":"","keywords":"Silicon on insulator; Qubit; Optoelectronics; Electronic engineering; Physics; Materials science; Computer science; Engineering; Quantum mechanics; Silicon; Quantum","score_opus":0.014332136537420928,"score_gpt":0.2752298795522307,"score_spread":0.2608977430148098,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4392104198","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.98203117,0.001085269,0.0155475605,0.00011277935,0.000043316497,0.0002814984,0.00022568954,0.000053265107,0.000619467],"genre_scores_gemma":[0.99940884,0.000026899424,0.000082008555,0.000037321763,0.000083175226,0.00001503226,0.00020396673,0.0000342729,0.000108465276],"study_design_codex":"observational","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.9981155,0.000094715004,0.00055484445,0.00041812562,0.00018934591,0.0006274798],"domain_scores_gemma":[0.9992808,0.00015674435,0.000111945854,0.00025011253,0.00007688014,0.00012353038],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.00026781752,0.00024923784,0.0005469269,0.00043244628,0.00008188205,0.00010021997,0.0001558208,0.00007584701,0.00024100408],"category_scores_gemma":[0.0000029974735,0.00025026844,0.00013492262,0.0014032831,0.000058670044,0.00031601044,0.000013163128,0.00044313917,0.0000057401594],"study_design_candidate":"simulation_or_modeling","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0006981475,0.002486196,0.37500468,0.00031402876,0.0069765532,0.000036857327,0.0068393787,0.3132071,0.10780275,0.0681912,0.00010423369,0.11833888],"study_design_scores_gemma":[0.0057848184,0.00190339,0.01545435,0.00015181997,0.0032458173,0.0000020764965,0.00042789333,0.8934483,0.01845802,0.048123,0.011355982,0.0016445633],"about_ca_topic_score_codex":0.0002679507,"about_ca_topic_score_gemma":0.0016659942,"teacher_disagreement_score":0.5802412,"about_ca_system_score_codex":0.00008740918,"about_ca_system_score_gemma":0.00030683074,"threshold_uncertainty_score":0.99999493},"labels":[],"label_agreement":null},{"id":"W4407357202","doi":"10.1016/j.sse.2025.109082","title":"Degradation mechanisms for static and dynamic characteristics in 1.2 kV 4H-SiC MOSFETs under repetitive short-circuit tests","year":2025,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"Silicon Carbide Semiconductor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"University of Toronto","funders":"Jiangsu Provincial Key Research and Development Program; Joint Project of Industry-University-Research of Jiangsu Province; China Scholarship Council","keywords":"Degradation (telecommunications); Materials science; MOSFET; Optoelectronics; Electrical engineering; Electronic engineering; Engineering; Transistor; Voltage","score_opus":0.01021698030372601,"score_gpt":0.26277103037051047,"score_spread":0.25255405006678444,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4407357202","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9566793,0.0010040884,0.040372446,0.0001441737,0.00031647895,0.0006838856,0.00007025324,0.00061007106,0.000119329285],"genre_scores_gemma":[0.9977323,0.0011946143,0.0004242943,0.00009386109,0.0000068280847,0.00015576388,0.000100656805,0.00006411449,0.00022758749],"study_design_codex":"bench_or_experimental","study_design_gemma":"theoretical_or_conceptual","domain_scores_codex":[0.99846375,0.000024316725,0.00040923216,0.0003693738,0.000116569965,0.0006167304],"domain_scores_gemma":[0.99930495,0.0002143004,0.00005003839,0.0003168555,0.00007324789,0.000040604788],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.00020147579,0.00027654984,0.0003528591,0.00032320915,0.000056542307,0.00006116053,0.00018522404,0.00017106406,0.0000040205823],"category_scores_gemma":[0.00017497978,0.00031852376,0.000045054392,0.00038497834,0.000058030437,0.00016191657,0.000044521705,0.00037802558,0.0000031191344],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.000044175427,0.00006907468,0.0008441814,0.0004822715,0.0002710545,0.0000178713,0.00049434527,0.004092796,0.85753334,0.06567545,0.00021890503,0.07025652],"study_design_scores_gemma":[0.001362811,0.0003132266,0.008512514,0.00028688594,0.00013837779,0.000022896947,0.00089361286,0.3455375,0.2317705,0.4095938,0.00054321584,0.0010246511],"about_ca_topic_score_codex":0.000006535281,"about_ca_topic_score_gemma":0.0005543149,"teacher_disagreement_score":0.6257629,"about_ca_system_score_codex":0.0007124322,"about_ca_system_score_gemma":0.00013515237,"threshold_uncertainty_score":0.9999267},"labels":[],"label_agreement":null},{"id":"W4409846751","doi":"10.1016/j.sse.2025.109141","title":"Preliminary results on industrial 28nm FD-SOI phase change memory at cryogenic temperature","year":2025,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"Phase-change materials and chalcogenides","field":"Materials Science","cited_by":0,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Institut interdisciplinaire d'innovation technologique; Institut quantique; Université de Sherbrooke","funders":"","keywords":"Cryogenic temperature; Silicon on insulator; Phase change; Phase-change memory; Materials science; Engineering physics; Optoelectronics; Physics; Composite material; Silicon","score_opus":0.041117739251428136,"score_gpt":0.31326218820247287,"score_spread":0.2721444489510447,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4409846751","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.9896711,0.0028776343,0.0000067727433,0.001379251,0.0020805695,0.0010393047,0.0010492103,0.00031484765,0.0015813033],"genre_scores_gemma":[0.9882899,0.0009131606,0.00004359517,0.0016227865,0.0010839213,0.00028929117,0.00036186413,0.00007685573,0.0073186294],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9960426,0.00030462854,0.00075382384,0.0010022561,0.00049889355,0.0013977815],"domain_scores_gemma":[0.99831945,0.00016678701,0.00030533248,0.000848113,0.00014001112,0.00022029011],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.0009225702,0.000569238,0.00062771264,0.0002616452,0.0005412721,0.00022538255,0.0006560062,0.0004179869,0.0003874217],"category_scores_gemma":[0.00015195247,0.00051438954,0.00019344946,0.0004896185,0.00014441613,0.00028730743,0.00034622176,0.00050245377,0.00037706335],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.006994321,0.00046632235,0.0000032777634,0.00006300671,0.00006503405,0.000100991114,0.00086966413,0.00006754383,0.9636113,0.00033513334,0.023528002,0.0038953952],"study_design_scores_gemma":[0.006028872,0.0024278667,0.000019765874,0.00016283318,0.000096749776,0.000026337595,0.00007902086,0.00011946091,0.9421999,0.0009559833,0.047416132,0.00046711354],"about_ca_topic_score_codex":0.00005227053,"about_ca_topic_score_gemma":0.00017814885,"teacher_disagreement_score":0.02388813,"about_ca_system_score_codex":0.0006167926,"about_ca_system_score_gemma":0.00043457127,"threshold_uncertainty_score":0.99973077},"labels":[],"label_agreement":null},{"id":"W4410644124","doi":"10.1016/j.sse.2025.109153","title":"Rigorous analysis on the operating mechanism of gate-injection ferroelectric flash","year":2025,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"Ferroelectric and Negative Capacitance Devices","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":false,"route_ca_aff":false,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"","funders":"Institute for Information and Communications Technology Promotion; Samsung; Ministry of Science and ICT, South Korea; IC Design Education Center; Information Technology Research Centre; National Research Foundation","keywords":"Flash (photography); Mechanism (biology); Ferroelectricity; Flash memory; Materials science; Optoelectronics; Computer science; Embedded system; Optics; Physics","score_opus":0.006332516305171447,"score_gpt":0.23140082057167388,"score_spread":0.22506830426650243,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4410644124","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.90521204,0.0029176068,0.07465403,0.0002184776,0.00030845182,0.0004917399,0.000016937482,0.00037286434,0.015807834],"genre_scores_gemma":[0.99769145,0.0009788849,0.00008663346,0.00019360069,0.000027960461,0.00005246941,0.000013195791,0.00003231637,0.00092348974],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99832845,0.00010970464,0.00041299677,0.00029026598,0.0002484344,0.0006101683],"domain_scores_gemma":[0.99911135,0.00025408837,0.00009078846,0.0003569411,0.0001454453,0.000041352836],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00038526347,0.00027905597,0.00042150228,0.00050373323,0.00021040735,0.000051023228,0.0002925658,0.000099087076,0.000041656265],"category_scores_gemma":[0.00008630801,0.00022087431,0.00020109137,0.0035343745,0.00003809132,0.000104920866,0.000019496683,0.00053166284,0.000022247945],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00010707119,0.00013481754,0.00019692497,0.00019165756,0.0048166024,0.000009008861,0.001654791,0.7239656,0.06713934,0.18521997,0.0028184808,0.013745707],"study_design_scores_gemma":[0.00031390303,0.00036214254,0.0001647377,0.0000424235,0.00041939213,0.0000028678749,0.00015130911,0.6583634,0.32530713,0.013520577,0.001033409,0.00031869466],"about_ca_topic_score_codex":0.000016185042,"about_ca_topic_score_gemma":0.00026219862,"teacher_disagreement_score":0.2581678,"about_ca_system_score_codex":0.000356889,"about_ca_system_score_gemma":0.000109273824,"threshold_uncertainty_score":0.9006993},"labels":[],"label_agreement":null},{"id":"W4410816239","doi":"10.1016/j.sse.2025.109156","title":"Preliminary numerical study on magnet gate in MOS FD-SOI technology for quantum and sensor applications","year":2025,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":false,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Institut interdisciplinaire d'innovation technologique; Université de Sherbrooke","funders":"","keywords":"Silicon on insulator; Optoelectronics; Magnet; Physics; Quantum; Materials science; Electrical engineering; Engineering physics; Engineering; Silicon; Quantum mechanics","score_opus":0.009627530095720543,"score_gpt":0.28322691410380363,"score_spread":0.2735993840080831,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4410816239","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.7834171,0.0063207517,0.20425048,0.0002899383,0.0002077685,0.004045002,0.000055685283,0.00057103083,0.00084224454],"genre_scores_gemma":[0.99787897,0.0004167752,0.0003383137,0.00007698376,0.000018261506,0.00095265603,0.000013491956,0.00003881375,0.0002657201],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99882823,0.000019177354,0.00028047856,0.00032083312,0.00007562717,0.00047568118],"domain_scores_gemma":[0.9995314,0.00008638707,0.00003424358,0.00028255026,0.00003051881,0.00003490561],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00010404453,0.00019336707,0.00024313349,0.00020163786,0.00007315571,0.00001962493,0.00016316553,0.00008566874,0.00000473247],"category_scores_gemma":[0.000010152266,0.00020647729,0.000025416877,0.00042753073,0.000032397682,0.000058182588,0.000027781527,0.00029358512,0.000006536108],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00094014464,0.0034561697,0.011042127,0.0015063186,0.0012186228,0.00007812829,0.003662627,0.4108168,0.09942104,0.12595713,0.0036855217,0.33821538],"study_design_scores_gemma":[0.007896383,0.007071433,0.002446141,0.00020043067,0.00030477298,0.000032421493,0.0055790916,0.5462423,0.03252207,0.15234238,0.2432839,0.0020786473],"about_ca_topic_score_codex":0.0000021525314,"about_ca_topic_score_gemma":0.000008376078,"teacher_disagreement_score":0.33613673,"about_ca_system_score_codex":0.00015703024,"about_ca_system_score_gemma":0.00004011937,"threshold_uncertainty_score":0.84198993},"labels":[],"label_agreement":null},{"id":"W4414077628","doi":"10.1016/j.sse.2025.109230","title":"Silicon nanowire field-effect transistor biosensors with bowtie antenna","year":2025,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"Nanowire Synthesis and Applications","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"route_ca_aff":false,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"","funders":"China Scholarship Council; Helmholtz-Alberta Initiative; Helmholtz-Gemeinschaft","keywords":"Biosensor; Nanowire; Transistor; Antenna (radio); Wafer; Silicon; Noise (video); Silicon on insulator","score_opus":0.002309641400801917,"score_gpt":0.21130369569417884,"score_spread":0.20899405429337692,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4414077628","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.96712476,0.0047142156,0.014996095,0.0012210135,0.0002505449,0.00076419057,0.000030010677,0.00090678554,0.009992367],"genre_scores_gemma":[0.9974735,0.0007580922,0.00013328757,0.00014026149,0.000032571712,0.00010487641,0.0000106084435,0.00004913167,0.0012976686],"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","domain_scores_codex":[0.9988035,0.000030751384,0.00023081405,0.0002674531,0.000120337245,0.0005471448],"domain_scores_gemma":[0.9993619,0.00013951542,0.000026655298,0.00036441465,0.00003789288,0.0000696515],"candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000111397676,0.00025929388,0.0002956017,0.000119326956,0.00013003612,0.00004077419,0.00019336113,0.0000995164,0.000027108928],"category_scores_gemma":[0.000014383587,0.00022286436,0.00010400944,0.00043428026,0.00003560642,0.000073246636,0.0000104137,0.0002709304,0.00003471988],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.0002820976,0.0001905869,0.0005919863,0.0006643765,0.0008707857,0.00003009303,0.0006279928,0.0065686023,0.8130501,0.007785293,0.012578553,0.15675955],"study_design_scores_gemma":[0.00076552003,0.00036768685,0.00022396786,0.00012607982,0.000120213204,0.000009035417,0.000038217357,0.015869834,0.83135366,0.0006989078,0.14989479,0.00053208525],"about_ca_topic_score_codex":0.000010671492,"about_ca_topic_score_gemma":0.00017560001,"teacher_disagreement_score":0.15622747,"about_ca_system_score_codex":0.00014527625,"about_ca_system_score_gemma":0.00009360482,"threshold_uncertainty_score":0.9088145},"labels":[],"label_agreement":null},{"id":"W4415654271","doi":"10.1016/j.sse.2025.109285","title":"3D simulation of charge defect impact on an industrial 28 nm FD-SOI quantum dot","year":2025,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":false,"route_ca_aff":true,"route_ca_fund":true,"route_ca_venue":false,"route_about_ca":false,"ca_institutions":"Nanoacademic Technologies; Institut quantique; Université de Sherbrooke","funders":"Canadian Nautical Research Society; Bundesbehörden der Schweizerischen Eidgenossenschaft; Canada Foundation for Innovation; Natural Sciences and Engineering Research Council of Canada; Fonds de recherche du Québec; Université de Sherbrooke; European Commission; Key Digital Technologies Joint Undertaking; Université Grenoble Alpes","keywords":"Quantum dot; Charge (physics); Sensitivity (control systems); Quantum; Quality (philosophy); Quantum computer; Quantum dot laser","score_opus":0.022404924793085163,"score_gpt":0.3112807901526339,"score_spread":0.28887586535954873,"validation_status":"score_only:v0-immature-baseline","prediction":{"id":"W4415654271","genre_codex":"empirical","genre_gemma":"empirical","domain_codex":null,"domain_gemma":null,"model_version":"codex-gemma-dda1882f352a","genre_candidate":"empirical","genre_consensus":"empirical","domain_candidate":null,"domain_consensus":null,"prediction_status":"machine_predicted_unvalidated","genre_scores_codex":[0.98790073,0.0011896496,0.008147241,0.000007157127,0.0005636882,0.00041785388,0.00006282382,0.00022115884,0.0014896764],"genre_scores_gemma":[0.9992125,0.00030508332,0.000022034726,0.000049106013,0.000113316106,0.000014225701,0.000073526935,0.00005226869,0.00015793444],"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","domain_scores_codex":[0.99841523,0.00006460788,0.00041676077,0.00027706526,0.00021750049,0.00060885237],"domain_scores_gemma":[0.99925476,0.000119115575,0.00010056091,0.0003872075,0.000058410566,0.00007996579],"candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.00025403418,0.00029139957,0.00035447854,0.0001774098,0.000072992334,0.000033945194,0.00022624797,0.00015579804,0.00010120722],"category_scores_gemma":[0.000026873291,0.00027701005,0.00013841777,0.00039794322,0.000026515347,0.00024868778,0.000015635054,0.0004445012,0.000020385387],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_system_candidate":false,"about_ca_system_consensus":false,"study_design_scores_codex":[0.00012330743,0.00009296149,0.00037391714,0.000057745805,0.00026718908,0.0000024662324,0.00021660911,0.93237436,0.039595738,0.0023225504,0.0003345915,0.024238555],"study_design_scores_gemma":[0.0025378945,0.0014582002,0.00022532929,0.00016642956,0.00015779935,0.0000022399831,0.00006887697,0.84929085,0.11305409,0.0070310533,0.02520874,0.0007985158],"about_ca_topic_score_codex":0.000013470472,"about_ca_topic_score_gemma":0.0000150168435,"teacher_disagreement_score":0.08308354,"about_ca_system_score_codex":0.00042002165,"about_ca_system_score_gemma":0.00015196217,"threshold_uncertainty_score":0.99996823},"labels":[],"label_agreement":null}]}