{"meta":{"page":1,"per_page":50,"max_per_page":100,"total":862,"total_is_capped":false,"direct_labels_cover":0,"predictions_cover":862,"direct_label_status":"direct model label, unvalidated","prediction_status":"machine_predicted_unvalidated (Codex and Gemma teacher distillation)","score_status":"score_only:v0-immature-baseline (scores rank; they never assert a category)","snapshot":{"source":"OpenAlex, pinned release, all 482 partitions","release":"2026-06-24","frame_built":"2026-07-12"},"query_hash":"73b5fc318297","filters":{"topic":"GaN-based semiconductor devices and materials"}},"results":[{"id":"W2059494118","doi":"10.1038/nnano.2014.308","title":"Ultralow-threshold electrically injected AlGaN nanowire ultraviolet lasers on Si operating at low temperature","year":2015,"lang":"en","type":"article","venue":"Nature Nanotechnology","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":296,"is_retracted":false,"has_abstract":false,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"McGill University","funders":"","keywords":"Ultraviolet; Materials science; Laser; Optoelectronics; Substrate (aquarium); Semiconductor; Nanowire; Radiation; Optics; Physics","retraction":null,"screen_n_in":null,"score":{"opus":0.007225035245697017,"gpt":0.2377259315798349,"spread":0.2305008963341379,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":["metaepi_narrow","research_integrity"],"consensus_categories":[],"category_scores_codex":[0.000203296,0.0004733513,0.0005464558,0.0001911069,0.0002276123,0.00009611042,0.0005761288,0.001371094,0.0001908024],"category_scores_gemma":[0.0001025658,0.0003949459,0.0001416628,0.000623746,0.0001090917,0.0001235676,0.00006813405,0.001679402,0.0001330216],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.0001560345,"about_ca_system_score_gemma":0.0001936183,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.00005695177,"about_ca_topic_score_gemma":0.00001655733,"domain_scores_codex":[0.9977302,0.00008195815,0.0004137743,0.0007248029,0.0003196083,0.0007296847],"domain_scores_gemma":[0.9986681,0.00007665913,0.0001923326,0.0006213778,0.0002419261,0.0001995945],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.00006475819,0.000108506,0.0020631,0.00001333261,0.0000650923,0.00002062672,0.00009158633,0.00008441397,0.9851958,0.002966176,0.008523754,0.0008028512],"study_design_scores_gemma":[0.001410087,0.000362707,0.0001308934,0.00007216409,0.0000336149,0.00001035585,0.0002030097,0.00003802545,0.9883388,0.0006213202,0.008302203,0.000476853],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9959627,0.0002420052,0.000009893854,0.0009999732,0.0008392655,0.0004439295,0.0001335566,0.000355761,0.001012885],"genre_scores_gemma":[0.9967486,0.000005828334,0.0003692863,0.001331419,0.0003616149,0.00005322832,0.0003744958,0.00006907141,0.0006864863],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.003142963,"threshold_uncertainty_score":0.9999253,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2007128208","doi":"10.1021/nl104536x","title":"p-Type Modulation Doped InGaN/GaN Dot-in-a-Wire White-Light-Emitting Diodes Monolithically Grown on Si(111)","year":2011,"lang":"en","type":"article","venue":"Nano Letters","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":277,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"McMaster University; McGill University","funders":"","keywords":"Materials science; Optoelectronics; Quantum dot; Light-emitting diode; Molecular beam epitaxy; Heterojunction; Diode; Doping; Nanowire; Epitaxy; Phosphor; Modulation (music); Nanotechnology; Layer (electronics); Physics","retraction":null,"screen_n_in":null,"score":{"opus":0.02143626579396243,"gpt":0.2310009847611126,"spread":0.2095647189671502,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0002320214,0.0002552692,0.0002926287,0.0001210699,0.0001099282,0.00008103073,0.0002225879,0.00008972977,0.0003929776],"category_scores_gemma":[0.00001064727,0.0002295876,0.00009437503,0.0001868722,0.00003085429,0.0002227898,0.00003566515,0.000181367,0.0001049618],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.00004598055,"about_ca_system_score_gemma":0.00002751488,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.0005044543,"about_ca_topic_score_gemma":0.00001083356,"domain_scores_codex":[0.998515,0.00008973305,0.0003989633,0.0004038098,0.0001849869,0.0004074997],"domain_scores_gemma":[0.9993035,0.00003917727,0.000189923,0.0003305873,0.00005007727,0.00008678532],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.00006950299,0.00008516349,0.06609911,0.00002265385,0.00003346027,0.000006303874,0.001506908,0.0001066904,0.9289612,0.001134483,0.0004327547,0.001541764],"study_design_scores_gemma":[0.00203636,0.0002531444,0.07017395,0.0003447514,0.00007102077,0.000001889236,0.0005978908,0.0003130638,0.9197466,0.001348179,0.004008902,0.001104239],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9947141,0.000008524677,0.00009095878,0.0007934798,0.0005262865,0.0002369322,0.00001360601,0.0000557455,0.003560339],"genre_scores_gemma":[0.99746,9.440857e-7,0.0004897049,0.001453395,0.0003858242,0.00001993767,0.00005390153,0.0000399461,0.00009633317],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.009214592,"threshold_uncertainty_score":0.936231,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2113992013","doi":"10.1021/nl051860m","title":"Diameter-Dependent Electromechanical Properties of GaN Nanowires","year":2006,"lang":"en","type":"article","venue":"Nano Letters","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":270,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"National Institute for Nanotechnology; University of Alberta","funders":"","keywords":"Nanowire; Nanoelectromechanical systems; Resonator; Materials science; Transmission electron microscopy; Resonance (particle physics); Q factor; Modulus; Scanning electron microscope; Optoelectronics; Condensed matter physics; Nanotechnology; Composite material; Nanoparticle; Atomic physics; Physics","retraction":null,"screen_n_in":null,"score":{"opus":0.01108927354221126,"gpt":0.2048012102255955,"spread":0.1937119366833843,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0000869382,0.0001366627,0.000219546,0.00004804377,0.00004177528,0.00003697882,0.0001518439,0.00002933346,0.000255808],"category_scores_gemma":[0.000001717636,0.0001097612,0.00009760977,0.00006062583,0.00003800266,0.00007766541,0.00002214399,0.00004715064,0.00002461805],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.00001576012,"about_ca_system_score_gemma":0.00002224326,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.00120137,"about_ca_topic_score_gemma":0.000009840469,"domain_scores_codex":[0.9990895,0.00004214804,0.0002613241,0.000195306,0.0001559517,0.0002557357],"domain_scores_gemma":[0.9996211,0.00001413527,0.0001134525,0.0001934584,0.0000264586,0.00003137768],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.0000122375,0.00006069257,0.001514883,0.00002109121,0.00002523481,8.910397e-7,0.00003063169,0.0000124886,0.9957933,0.001248933,0.0009214079,0.000358152],"study_design_scores_gemma":[0.0002833378,0.00003532612,0.0001955083,0.00002862599,0.00002061242,6.300061e-7,0.00002819186,0.000003408397,0.9976538,0.0003896556,0.001226397,0.0001345005],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9983513,0.00005823354,0.0002902167,0.0004624146,0.0002187659,0.0001364342,0.00002157121,0.00002701944,0.0004340183],"genre_scores_gemma":[0.9991114,7.880344e-7,0.0001374879,0.0002553709,0.0002795986,0.0000203774,0.00001596478,0.0000194749,0.000159589],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.001860449,"threshold_uncertainty_score":0.4475934,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2077277084","doi":"10.1038/srep08332","title":"Aluminum nitride nanowire light emitting diodes: Breaking the fundamental bottleneck of deep ultraviolet light sources","year":2015,"lang":"en","type":"article","venue":"Scientific Reports","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":223,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":true,"ca_fund":true,"ca_venue":false,"about_ca":false},"ca_institutions":"McGill University","funders":"Army Research Office; Natural Sciences and Engineering Research Council of Canada; McGill University","keywords":"Nanowire; Materials science; Optoelectronics; Light-emitting diode; Gallium nitride; Diode; Quantum efficiency; Ultraviolet; Nitride; Substrate (aquarium); Doping; Wide-bandgap semiconductor; Nanotechnology; Layer (electronics)","retraction":null,"screen_n_in":null,"score":{"opus":0.01494331707588222,"gpt":0.2418803725346661,"spread":0.2269370554587839,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.001616698,0.0002204499,0.0003235088,0.0000828378,0.0003773349,0.0004370515,0.0002901492,0.00004878513,0.0002690358],"category_scores_gemma":[0.00003536253,0.0001511477,0.0001782102,0.0002806406,0.0001738901,0.0002282805,0.0001133709,0.0001087339,0.00002557401],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.00003165721,"about_ca_system_score_gemma":0.0001531894,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.0003585831,"about_ca_topic_score_gemma":0.00001701917,"domain_scores_codex":[0.9976907,0.00007566091,0.0007375111,0.0005664335,0.0005223149,0.000407415],"domain_scores_gemma":[0.9980531,0.00004020938,0.0007751604,0.0007648191,0.0002069505,0.0001597872],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.00001033995,0.0001248955,0.09619974,0.00004087439,0.00005961349,0.00003355777,0.004728526,0.00006894424,0.8900258,0.00018424,0.006400041,0.002123427],"study_design_scores_gemma":[0.0002273095,0.000026075,0.0003813394,0.0001271462,0.00007082848,0.00004352457,0.007029902,0.00004453789,0.9153249,0.002801555,0.07365699,0.000265883],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9904628,0.0002744788,0.00006035772,0.0001400669,0.005166767,0.0002734252,0.00001753831,0.0000321658,0.003572383],"genre_scores_gemma":[0.9981008,4.242059e-7,0.0001363751,0.00002631756,0.0004050432,0.00002131321,0.00008426134,0.00002437368,0.001201065],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.0958184,"threshold_uncertainty_score":0.6163624,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2465138693","doi":"10.1021/acs.nanolett.6b01929","title":"Full-Color Single Nanowire Pixels for Projection Displays","year":2016,"lang":"en","type":"article","venue":"Nano Letters","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":200,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":true,"ca_fund":true,"ca_venue":false,"about_ca":false},"ca_institutions":"McMaster University; McGill University","funders":"Natural Sciences and Engineering Research Council of Canada; Samsung","keywords":"Nanowire; Materials science; Light-emitting diode; Optoelectronics; Quantum dot; Photoluminescence; Diode; Indium gallium nitride; Indium; Biasing; Light emission; Substrate (aquarium); Gallium nitride; Nanotechnology; Voltage; Layer (electronics)","retraction":null,"screen_n_in":null,"score":{"opus":0.01671062353715645,"gpt":0.2391128624941971,"spread":0.2224022389570407,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00009239202,0.0001452814,0.0001627838,0.00004377377,0.0001041578,0.00005346683,0.0001093972,0.00003710734,0.00029372],"category_scores_gemma":[0.000005393867,0.00009779119,0.0001096583,0.00005490837,0.00003367175,0.0001788467,0.00001878531,0.00002104446,0.00007126359],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.00004147986,"about_ca_system_score_gemma":0.00002186444,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.00005402343,"about_ca_topic_score_gemma":0.000004859271,"domain_scores_codex":[0.9991657,0.00002386964,0.0001836625,0.0002522487,0.00008564481,0.0002889055],"domain_scores_gemma":[0.9995695,0.00006432088,0.0001082093,0.0001722847,0.00003647617,0.00004919293],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.00005095145,0.00004612887,0.0007200148,0.00001748421,0.00002928966,2.868082e-7,0.00005981181,0.000001210055,0.9850129,0.0007395874,0.008591405,0.004730958],"study_design_scores_gemma":[0.001083798,0.0001678438,0.0001488579,0.00006486853,0.00003717506,9.987247e-7,0.0000535488,0.000004720429,0.9101909,0.0002752174,0.08772532,0.0002467097],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9902695,0.000006266724,0.005589214,0.002253869,0.0009090333,0.0004482336,0.0001376059,0.00004682334,0.0003394004],"genre_scores_gemma":[0.9973037,3.823143e-7,0.0004587185,0.0005862919,0.0007146093,0.0001647028,0.00003181318,0.00002688866,0.000712881],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.07913391,"threshold_uncertainty_score":0.3987809,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2072033548","doi":"10.1364/oe.19.025528","title":"Optical performance of top-down fabricated InGaN/GaN nanorod light emitting diode arrays","year":2011,"lang":"en","type":"article","venue":"Optics Express","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":195,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"McGill University","funders":"","keywords":"Nanorod; Materials science; Light-emitting diode; Optoelectronics; Photoluminescence; Diode; Planar; Fabrication; Gallium nitride; Optics; Indium gallium nitride; Quantum-confined Stark effect; Wide-bandgap semiconductor; Plasma etching; Etching (microfabrication); Piezoelectricity; Quantum well; Nanotechnology; Laser; Composite material","retraction":null,"screen_n_in":null,"score":{"opus":0.01808698360580996,"gpt":0.2238317368954686,"spread":0.2057447532896587,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0001589893,0.0002095243,0.0003249159,0.00004119189,0.00009422575,0.00004265076,0.0003315081,0.00007026522,0.0004279045],"category_scores_gemma":[0.000008154964,0.0001876924,0.00009260526,0.0001042913,0.00006206604,0.0001758093,0.00008727217,0.000139276,0.00003492457],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.000009589796,"about_ca_system_score_gemma":0.00004046535,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.00008435808,"about_ca_topic_score_gemma":4.652974e-7,"domain_scores_codex":[0.9987417,0.00002944423,0.0004254779,0.0002803082,0.0001633043,0.0003598002],"domain_scores_gemma":[0.9990839,0.00003668177,0.0002233346,0.0004202508,0.0001197956,0.0001160651],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.00003381365,0.000242823,0.02783286,0.0000910974,0.00008330102,0.000001974565,0.002092717,0.00005193511,0.963943,0.004608493,0.0001061449,0.0009118401],"study_design_scores_gemma":[0.0003372685,0.000082796,0.001175072,0.0000894184,0.00005771513,0.000001045984,0.0004358451,0.0004524278,0.9964069,0.0001630322,0.0005554815,0.0002430179],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9748102,0.00002581675,0.0006027766,0.00001475243,0.0002964897,0.0001487471,0.0000371745,0.00003768974,0.02402631],"genre_scores_gemma":[0.9942386,0.000004202182,0.005188723,0.00001758273,0.0002231969,0.0000202237,0.00003262124,0.00003138187,0.0002435416],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.03246387,"threshold_uncertainty_score":0.7653874,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2014708533","doi":"10.1021/nl203860b","title":"Controlling Electron Overflow in Phosphor-Free InGaN/GaN Nanowire White Light-Emitting Diodes","year":2012,"lang":"en","type":"article","venue":"Nano Letters","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":193,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":true,"ca_fund":true,"ca_venue":false,"about_ca":false},"ca_institutions":"McMaster University; Brockhouse Institute for Materials Research; McGill University","funders":"McMaster University; Natural Sciences and Engineering Research Council of Canada; McGill University","keywords":"Optoelectronics; Materials science; Nanowire; Light-emitting diode; Electroluminescence; Diode; Phosphor; Auger effect; Voltage droop; Quantum efficiency; Indium gallium nitride; Wide-bandgap semiconductor; Quantum dot; Gallium nitride; Electron; Layer (electronics); Nanotechnology; Physics; Voltage","retraction":null,"screen_n_in":null,"score":{"opus":0.007308850078957341,"gpt":0.2195296546747927,"spread":0.2122208045958354,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.0004122729,0.0002842825,0.0003935542,0.00009899958,0.0001264754,0.0001093057,0.0003013402,0.00007087789,0.0002413165],"category_scores_gemma":[0.00001588643,0.0002662192,0.0001358154,0.0001758889,0.00002502624,0.0003959028,0.00005414259,0.0001836375,0.00004791086],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.00007500198,"about_ca_system_score_gemma":0.00002923101,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.0003335651,"about_ca_topic_score_gemma":0.00001180693,"domain_scores_codex":[0.9981826,0.00008129882,0.0004009978,0.000298463,0.0001958663,0.000840779],"domain_scores_gemma":[0.9992164,0.00006406259,0.0001913266,0.0003805747,0.00002607046,0.0001215271],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.00002434592,0.00005222311,0.1628885,0.00001863973,0.00003871122,0.000001502241,0.0006783679,0.00004515081,0.8339295,0.0003409103,0.001544023,0.000438039],"study_design_scores_gemma":[0.001835031,0.00002994522,0.004133842,0.0001330911,0.00004793113,0.000001361865,0.0002860529,0.0000328747,0.9786578,0.0001179899,0.01423168,0.0004923869],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9962382,0.0003422625,0.0001361832,0.001147464,0.0006886077,0.0002435689,0.0000271841,0.00004816522,0.001128323],"genre_scores_gemma":[0.9972023,0.000003048148,0.0003099091,0.001241375,0.001018482,0.00003961796,0.00003693271,0.00004799478,0.0001003419],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.1587547,"threshold_uncertainty_score":0.999979,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W1977417292","doi":"10.1063/1.1527225","title":"Dislocation effect on light emission efficiency in gallium nitride","year":2002,"lang":"en","type":"article","venue":"Applied Physics Letters","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":189,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":false,"ca_fund":false,"ca_venue":false,"about_ca":true},"ca_institutions":"","funders":"","keywords":"Dislocation; Gallium nitride; Doping; Materials science; Wide-bandgap semiconductor; Condensed matter physics; Diffusion; Gallium; Carrier lifetime; Atomic physics; Optoelectronics; Silicon; Physics; Thermodynamics; Nanotechnology; Metallurgy","retraction":null,"screen_n_in":null,"score":{"opus":0.008763691074606672,"gpt":0.2143197287539131,"spread":0.2055560376793064,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0001051378,0.0002251631,0.0002352001,0.00005139092,0.00007755902,0.00005350073,0.0001658099,0.00003374506,0.0001944154],"category_scores_gemma":[0.000001461725,0.000197054,0.00007290526,0.0002082641,0.00002237006,0.00007102782,0.00002385734,0.000157983,0.0002828714],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.00003627504,"about_ca_system_score_gemma":0.000005325865,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.00005672952,"about_ca_topic_score_gemma":3.263723e-7,"domain_scores_codex":[0.9989267,0.00003926631,0.0002177508,0.0003323203,0.0001785473,0.0003054171],"domain_scores_gemma":[0.9994503,0.0000789601,0.0001075246,0.0002906159,0.000009790754,0.00006280074],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.00001717159,0.0001487727,0.001774318,0.00002217787,0.00001161965,9.291267e-7,0.0002351586,0.0005966674,0.9876799,0.002629201,0.001950022,0.004934058],"study_design_scores_gemma":[0.0009793435,0.000058537,0.000517702,0.00005648101,0.00002246665,1.012155e-7,0.00003447393,0.0002394188,0.9957744,0.0003938634,0.001582034,0.000341211],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9906914,0.000007720796,0.0003611497,0.0002896366,0.0001970044,0.000354329,0.000008052773,0.00003819143,0.008052515],"genre_scores_gemma":[0.9986163,7.821229e-7,0.00001951092,0.0006518961,0.0004929959,0.00008311369,0.00005379187,0.00002882337,0.00005274275],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.008094463,"threshold_uncertainty_score":0.8035631,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2056276153","doi":"10.1063/1.1345816","title":"Properties of carbon-doped GaN","year":2001,"lang":"en","type":"article","venue":"Applied Physics Letters","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":149,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"Institute for Microstructural Sciences","funders":"","keywords":"Materials science; Photoluminescence; Doping; Molecular beam epitaxy; Optoelectronics; Carbon fibers; Luminescence; Electrical resistivity and conductivity; Epitaxy; Hall effect; Wide-bandgap semiconductor; Nanotechnology; Composite material; Layer (electronics)","retraction":null,"screen_n_in":null,"score":{"opus":0.01735955907463065,"gpt":0.2095211880675154,"spread":0.1921616289928847,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00005277231,0.0001710642,0.0002548017,0.00002233196,0.0000425671,0.00002647663,0.0001671957,0.00001974284,0.00008844366],"category_scores_gemma":[3.741515e-7,0.0001504952,0.00007392271,0.0001163116,0.00007064256,0.00005305991,0.00002832534,0.00007692112,0.00002294801],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.000009694343,"about_ca_system_score_gemma":0.00002037698,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.0004222244,"about_ca_topic_score_gemma":9.23739e-7,"domain_scores_codex":[0.9991825,0.00001508638,0.0002177687,0.0002048313,0.0001359582,0.0002438776],"domain_scores_gemma":[0.9995034,0.00001197451,0.0001357466,0.0002763334,0.00002523132,0.00004728718],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.00001932742,0.00005740676,0.002269627,0.00002298093,0.00005819333,5.012016e-7,0.0002843521,0.0001755871,0.9904438,0.005539278,0.0002198006,0.0009091073],"study_design_scores_gemma":[0.000405192,0.000008797369,0.0001794684,0.00002052093,0.00003554744,2.000336e-7,0.0001955569,0.00001934786,0.9972295,0.0004959679,0.001202659,0.0002072738],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9874117,0.00001082344,0.0001761222,0.0001294814,0.0001314341,0.0002071519,0.00001044054,0.00002863642,0.01189419],"genre_scores_gemma":[0.9988546,0.00000111147,0.00005716818,0.0004335405,0.0005117183,0.00004219466,0.00002448886,0.00002877624,0.0000463689],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.01184782,"threshold_uncertainty_score":0.6137016,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2014888501","doi":"10.1021/nl4030165","title":"Breaking the Carrier Injection Bottleneck of Phosphor-Free Nanowire White Light-Emitting Diodes","year":2013,"lang":"en","type":"article","venue":"Nano Letters","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":144,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"McGill University","funders":"","keywords":"Light-emitting diode; Phosphor; Optoelectronics; Nanowire; Materials science; Diode; Color rendering index; Solid-state lighting; Optics; Physics","retraction":null,"screen_n_in":null,"score":{"opus":0.006599193529336638,"gpt":0.2051978778607597,"spread":0.1985986843314231,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0001593527,0.0001721735,0.0002157719,0.0000397406,0.000161198,0.0001029344,0.0003062054,0.00004232524,0.0006496371],"category_scores_gemma":[0.000008488139,0.0001212669,0.0001252303,0.0001279672,0.00004860443,0.0002196483,0.00007949287,0.00008763801,0.0000290293],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.0000210667,"about_ca_system_score_gemma":0.0000210906,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.002079393,"about_ca_topic_score_gemma":0.000008463622,"domain_scores_codex":[0.9989859,0.00005540612,0.0002977745,0.000216565,0.0001667199,0.0002776273],"domain_scores_gemma":[0.9991878,0.00004388603,0.0002308686,0.0004270581,0.00006541571,0.00004498409],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.00000416108,0.00001387613,0.03090395,0.00002162281,0.00005288419,2.680283e-7,0.0007515036,0.00004138307,0.9551949,0.0002106777,0.01078728,0.002017535],"study_design_scores_gemma":[0.0005704453,0.00003879913,0.006578837,0.0001338316,0.00006883036,0.00000232001,0.001310603,0.00003266261,0.9795423,0.0003782007,0.01102343,0.0003197763],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9956548,0.00005958233,0.000117122,0.00209135,0.0005954737,0.0002456796,0.00003737491,0.00002615923,0.001172437],"genre_scores_gemma":[0.9983642,9.290611e-7,0.0001851053,0.0007538448,0.0004110575,0.00004800891,0.00001440648,0.0000261071,0.0001963357],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.0243474,"threshold_uncertainty_score":0.711307,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2904435640","doi":"10.1109/access.2018.2885285","title":"GaN Integration Technology, an Ideal Candidate for High-Temperature Applications: A Review","year":2018,"lang":"en","type":"review","venue":"IEEE Access","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":144,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":true,"ca_fund":true,"ca_venue":false,"about_ca":false},"ca_institutions":"Polytechnique Montréal","funders":"Natural Sciences and Engineering Research Council of Canada; Airbus","keywords":"Microelectronics; Materials science; Silicon carbide; Gallium nitride; Engineering physics; Silicon; Wide-bandgap semiconductor; Optoelectronics; Power semiconductor device; Aerospace; Gallium arsenide; Reliability (semiconductor); Electronic engineering; Nanotechnology; Electrical engineering; Power (physics); Engineering; Aerospace engineering","retraction":null,"screen_n_in":null,"score":{"opus":0.04037036405521544,"gpt":0.3799919198835872,"spread":0.3396215558283718,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.0002668447,0.0004660631,0.001378192,0.0001738717,0.000169275,0.0002961546,0.001018509,0.0002856814,0.0002344235],"category_scores_gemma":[0.000006949983,0.0003481657,0.0002516134,0.0004478478,0.00006614977,0.0003433314,0.00004770525,0.0002534873,0.00006609334],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.00004563554,"about_ca_system_score_gemma":0.0002570258,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.000231014,"about_ca_topic_score_gemma":0.00003807176,"domain_scores_codex":[0.9981762,0.00008075433,0.0007050105,0.000629961,0.0001060979,0.0003020146],"domain_scores_gemma":[0.998101,0.00004621304,0.0006993515,0.000811878,0.0002538346,0.00008774622],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"design_other","study_design_gemma":"not_applicable","study_design_scores_codex":[0.000004191878,0.00009425681,0.000003763614,0.03372269,0.0002203142,5.387052e-7,0.000008175739,2.172231e-7,0.0002549903,0.005618838,0.02070428,0.9393677],"study_design_scores_gemma":[0.0001259878,0.00004320857,1.592045e-7,0.01745701,0.0007833982,0.000001688419,0.000007761236,5.720177e-7,0.00145127,0.002825061,0.9769089,0.0003949524],"study_design_candidate":"not_applicable","study_design_consensus":null,"genre_codex":"review","genre_gemma":"review","genre_scores_codex":[0.0001020596,0.992427,0.0008671286,0.00007730731,0.0006759382,0.004158408,0.001511799,0.000100753,0.0000796333],"genre_scores_gemma":[0.000678803,0.9851037,0.0002644315,0.0001736699,0.002148571,0.006547335,0.004878658,0.0000821177,0.000122747],"genre_candidate":"review","genre_consensus":"review","teacher_disagreement_score":0.9562047,"threshold_uncertainty_score":0.9998971,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2268224374","doi":"10.1063/1.4941239","title":"Enhancing the light extraction efficiency of AlGaN deep ultraviolet light emitting diodes by using nanowire structures","year":2016,"lang":"en","type":"article","venue":"Applied Physics Letters","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":130,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":true,"ca_fund":true,"ca_venue":false,"about_ca":false},"ca_institutions":"McGill University","funders":"Fonds de recherche du Québec – Nature et technologies; Natural Sciences and Engineering Research Council of Canada","keywords":"Nanowire; Materials science; Optoelectronics; Light-emitting diode; Ultraviolet; Diode; Light emission; Wide-bandgap semiconductor; Extraction (chemistry); Ultraviolet light; Green-light; Blue light; Chemistry","retraction":null,"screen_n_in":null,"score":{"opus":0.007248123609130105,"gpt":0.2256521839725092,"spread":0.2184040603633791,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0001464891,0.0002556634,0.0002816221,0.00002512749,0.0002278277,0.0000608188,0.0002579244,0.00004357752,0.00007226598],"category_scores_gemma":[0.000002464193,0.0001569138,0.0001160688,0.000126593,0.0000710992,0.0001477194,0.00003904104,0.0001119665,0.000008294393],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.0000291691,"about_ca_system_score_gemma":0.00002311677,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.00009391463,"about_ca_topic_score_gemma":9.661132e-7,"domain_scores_codex":[0.9986951,0.00004138336,0.0003757437,0.0003243627,0.0002115948,0.0003517978],"domain_scores_gemma":[0.9990736,0.0001080255,0.0003995672,0.0003333073,0.00003512644,0.00005037659],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.000008977066,0.0000330948,0.0003100939,0.00002129597,0.00004628085,2.978664e-7,0.0004307836,0.00007614965,0.9913146,0.002217874,0.000148896,0.005391607],"study_design_scores_gemma":[0.0002906976,0.000007812947,0.00006998212,0.0000559975,0.00005886273,6.421221e-7,0.0003416994,0.00001230243,0.9977486,0.0006070717,0.0005825461,0.0002237471],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9742022,0.00002952275,0.02457025,0.0002906694,0.000264254,0.0002331249,0.00004005003,0.00002499119,0.0003449041],"genre_scores_gemma":[0.9987568,0.000001229035,0.0002735533,0.0002565036,0.0006224751,0.00001905281,0.00002274745,0.0000377318,0.000009929297],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.02455454,"threshold_uncertainty_score":0.639876,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2579269796","doi":"10.1021/acs.nanolett.6b05002","title":"An AlGaN Core–Shell Tunnel Junction Nanowire Light-Emitting Diode Operating in the Ultraviolet-C Band","year":2017,"lang":"en","type":"letter","venue":"Nano Letters","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":130,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":true,"ca_fund":true,"ca_venue":false,"about_ca":false},"ca_institutions":"McGill University","funders":"Army Research Office; Natural Sciences and Engineering Research Council of Canada","keywords":"Nanowire; Optoelectronics; Materials science; Diode; Ultraviolet; Light-emitting diode; Tunnel junction; Core (optical fiber); Quantum tunnelling; Composite material","retraction":null,"screen_n_in":null,"score":{"opus":0.02065888366583004,"gpt":0.2583081828844863,"spread":0.2376492992186563,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.0006073608,0.0006261118,0.000641845,0.0001395117,0.0005997921,0.0008441312,0.001126778,0.0003850948,0.000221999],"category_scores_gemma":[0.00001319745,0.0004669802,0.000238282,0.00009374155,0.00008763731,0.0002963443,0.00004098733,0.001145273,0.00007060867],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.00006351931,"about_ca_system_score_gemma":0.00007671455,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.002107101,"about_ca_topic_score_gemma":0.00002417848,"domain_scores_codex":[0.9971162,0.000292006,0.0006224011,0.0008036359,0.0004111367,0.0007546128],"domain_scores_gemma":[0.9980141,0.0001262573,0.0005777027,0.00115795,0.00005888921,0.00006511219],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"not_applicable","study_design_scores_codex":[0.000003940708,0.00003271557,0.003205162,0.00006876049,0.00004800634,0.00007045519,0.000815097,0.0000203663,0.7559971,0.00001444578,0.2391672,0.0005567347],"study_design_scores_gemma":[0.002093667,0.0001615978,0.002220429,0.001114943,0.0003496215,0.00003281555,0.001046413,0.00006876018,0.1446869,0.0001531362,0.8457752,0.002296535],"study_design_candidate":"not_applicable","study_design_consensus":null,"genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.8936576,0.00005316758,0.00003031437,0.1019671,0.002039554,0.0006348421,0.0001145997,0.00005279263,0.001450076],"genre_scores_gemma":[0.7464252,0.000002782741,0.00008164158,0.2425316,0.009372169,0.000112941,0.001027728,0.0001049507,0.0003409942],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.6113102,"threshold_uncertainty_score":0.9997782,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2595476656","doi":"10.1109/tpel.2017.2684094","title":"Instability Analysis and Oscillation Suppression of Enhancement-Mode GaN Devices in Half-Bridge Circuits","year":2017,"lang":"en","type":"article","venue":"IEEE Transactions on Power Electronics","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":129,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"Queen's University","funders":"China Scholarship Council; National Natural Science Foundation of China","keywords":"Oscillation (cell signaling); Electronic circuit; Instability; Parasitic element; Inductance; Capacitor; Control theory (sociology); Transistor; Gallium nitride; Overvoltage; Optoelectronics; Materials science; Physics; Electrical engineering; Mechanics; Engineering; Voltage; Computer science","retraction":null,"screen_n_in":null,"score":{"opus":0.0149095045619557,"gpt":0.2831923272067899,"spread":0.2682828226448342,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0001814762,0.0001528849,0.0002993943,0.0001565907,0.0002020134,0.00007018961,0.0001533223,0.00005614529,0.0003721486],"category_scores_gemma":[0.000001770425,0.0001476548,0.0001071149,0.0001420788,0.00005524319,0.0002752303,0.000001887972,0.0001460571,0.000002733297],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.00004782679,"about_ca_system_score_gemma":0.00006696476,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.00145373,"about_ca_topic_score_gemma":0.0015086,"domain_scores_codex":[0.9989466,0.00005416422,0.0003103944,0.0002954623,0.0001421398,0.0002512397],"domain_scores_gemma":[0.999171,0.00003918261,0.000230224,0.0004488843,0.00005794677,0.00005279467],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.0001450166,0.0009750537,0.09108247,0.0001084839,0.0007871406,8.431277e-7,0.001424179,0.003316529,0.8808145,0.0008488525,0.00001372441,0.02048322],"study_design_scores_gemma":[0.0007934806,0.0001576993,0.05586336,0.00004462535,0.0002957029,2.286652e-7,0.000078766,0.001280294,0.9402846,0.0005724034,0.0003801593,0.0002487459],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9520456,0.00004351309,0.04688669,0.00005653243,0.0001617968,0.0001852824,0.00007713801,0.000009970331,0.0005334666],"genre_scores_gemma":[0.9998347,0.00002622925,0.00003235941,0.00001266033,0.00001149188,0.00001794627,0.00001779536,0.00001104434,0.00003577185],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.05947005,"threshold_uncertainty_score":0.6021188,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W1660116595","doi":"10.1063/1.1352684","title":"Ultraviolet photoenhanced wet etching of GaN in K2S2O8 solution","year":2001,"lang":"en","type":"article","venue":"Journal of Applied Physics","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":123,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"Institute for Microstructural Sciences","funders":"","keywords":"Etching (microfabrication); Materials science; Oxidizing agent; Reactive-ion etching; Ultraviolet light; Doping; Ultraviolet; Nitride; Passivation; Sapphire; Peroxydisulfate; Chemical engineering; Analytical Chemistry (journal); Inorganic chemistry; Layer (electronics); Chemistry; Nanotechnology; Optoelectronics; Metallurgy; Optics; Organic chemistry; Laser","retraction":null,"screen_n_in":null,"score":{"opus":0.01342134213905272,"gpt":0.248889322622621,"spread":0.2354679804835683,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000215935,0.0001309777,0.0003645523,0.00005479129,0.00002986704,0.00002183735,0.0001549471,0.00003383027,0.0001141421],"category_scores_gemma":[0.000001376242,0.0001174551,0.0001134924,0.0001544513,0.00002201562,0.0001336146,0.00001318247,0.0001939865,0.000005660354],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.00002471147,"about_ca_system_score_gemma":0.0000620759,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.00008587446,"about_ca_topic_score_gemma":0.000003403299,"domain_scores_codex":[0.9989983,0.00001989812,0.0005119685,0.0001017023,0.0001763533,0.0001918155],"domain_scores_gemma":[0.9990772,0.0000358481,0.0006292445,0.0001266094,0.00007573351,0.0000553341],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.0001116712,0.000192938,0.001483922,0.00001955004,0.00003899907,0.00000171518,0.0005482177,0.004392634,0.9870007,0.002148085,0.00008788427,0.003973668],"study_design_scores_gemma":[0.001449861,0.00007418781,0.001303679,0.0001280077,0.00004660056,0.000002382723,0.0006227075,0.0004156283,0.9757141,0.01927712,0.0007807972,0.0001848712],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9933095,0.00001401886,0.002157887,0.00001277738,0.0001888013,0.0001011616,0.00001302026,0.000003888325,0.004198938],"genre_scores_gemma":[0.9989409,0.00001171142,0.0004258121,0.00003549124,0.0005454279,0.000003171243,0.0000104776,0.00001545066,0.00001153358],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.01712904,"threshold_uncertainty_score":0.4789679,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2076799323","doi":"10.1063/1.3284660","title":"High efficiency green, yellow, and amber emission from InGaN/GaN dot-in-a-wire heterostructures on Si(111)","year":2010,"lang":"en","type":"article","venue":"Applied Physics Letters","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":117,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"McGill University","funders":"","keywords":"Heterojunction; Materials science; Quantum dot; Nanoclusters; Optoelectronics; Molecular beam epitaxy; Epitaxy; Nanoscopic scale; Photoluminescence; Wide-bandgap semiconductor; Nanotechnology; Layer (electronics)","retraction":null,"screen_n_in":null,"score":{"opus":0.005987120913593978,"gpt":0.2082731577822406,"spread":0.2022860368686467,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.00006653659,0.0003215978,0.0003266731,0.00004181849,0.0001203558,0.0001044085,0.0002086161,0.00007555704,0.0001469364],"category_scores_gemma":[0.000001066997,0.0002829915,0.00006840896,0.0001036846,0.0001033769,0.00008851189,0.00006146457,0.0003871402,0.00002906487],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.00001267343,"about_ca_system_score_gemma":0.00001498375,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.001614488,"about_ca_topic_score_gemma":0.0000153839,"domain_scores_codex":[0.9986613,0.00002353944,0.0002565154,0.0005083642,0.0001934842,0.0003567868],"domain_scores_gemma":[0.9992458,0.00008324657,0.0001495784,0.0003945715,0.00001370844,0.0001130632],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.0000344834,0.00005963776,0.003037085,0.00001235618,0.00002335068,0.000002028098,0.0003905522,0.0001246957,0.9885706,0.003771171,0.000338367,0.003635665],"study_design_scores_gemma":[0.001238373,0.00003046021,0.006697644,0.00003880177,0.00003549798,2.920161e-7,0.00009744742,0.00004686431,0.9827432,0.007334717,0.001212058,0.0005246252],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9982414,0.000002906738,0.00008597708,0.0002081243,0.0005177746,0.0002499169,0.0001006887,0.00003910451,0.000554135],"genre_scores_gemma":[0.9969963,4.810996e-7,0.0002343051,0.001527633,0.0009979163,0.00002579732,0.0001560724,0.00004434159,0.00001715974],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.00582739,"threshold_uncertainty_score":0.9999622,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2076066569","doi":"10.1038/srep07744","title":"Engineering the Carrier Dynamics of InGaN Nanowire White Light-Emitting Diodes by Distributed p-AlGaN Electron Blocking Layers","year":2015,"lang":"en","type":"article","venue":"Scientific Reports","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":117,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":true,"ca_fund":true,"ca_venue":false,"about_ca":false},"ca_institutions":"McMaster University; Brockhouse Institute for Materials Research; McGill University","funders":"McMaster University; Natural Sciences and Engineering Research Council of Canada; McGill University","keywords":"Nanowire; Materials science; Optoelectronics; Heterojunction; Light-emitting diode; Diode; Quantum dot; Luminescence; Quantum well; Wide-bandgap semiconductor; Band gap; Electron; Optics; Physics; Laser","retraction":null,"screen_n_in":null,"score":{"opus":0.007505145839517936,"gpt":0.2160473425444722,"spread":0.2085421967049542,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.001115865,0.0001760268,0.0002444901,0.00005411885,0.0002060005,0.0002697739,0.0001874268,0.00005549564,0.00003373025],"category_scores_gemma":[0.00004509581,0.0001332005,0.00009499147,0.0003317725,0.00006584997,0.0001473533,0.00007413875,0.000153168,0.000001700452],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.00006435021,"about_ca_system_score_gemma":0.0001349212,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.0001803054,"about_ca_topic_score_gemma":0.00001361298,"domain_scores_codex":[0.9983715,0.00003489178,0.0004901982,0.000404444,0.0003255956,0.0003733197],"domain_scores_gemma":[0.9987149,0.00002187061,0.0004206134,0.0005390979,0.0001813366,0.0001222275],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.00000532606,0.00004843034,0.0446863,0.00003974119,0.00008853031,0.00001267441,0.00154626,0.001457261,0.9419508,0.0005491722,0.009129259,0.0004862251],"study_design_scores_gemma":[0.000192769,0.00002203033,0.0001695801,0.0001044314,0.00007148361,0.00001585043,0.001670286,0.003005025,0.9463295,0.0009378727,0.04713698,0.0003442341],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9959297,0.00008707088,0.0007133259,0.0001624137,0.002495679,0.000180393,0.00008199993,0.00003688408,0.0003126017],"genre_scores_gemma":[0.9988266,2.445998e-7,0.00007404223,0.000006009459,0.0001105225,0.00001215469,0.0004782151,0.00002233187,0.0004699175],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.04451672,"threshold_uncertainty_score":0.5431761,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2144463384","doi":"10.1007/s11082-011-9437-z","title":"Electron leakage effects on GaN-based light-emitting diodes","year":2010,"lang":"en","type":"article","venue":"Optical and Quantum Electronics","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":108,"is_retracted":false,"has_abstract":false,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"Crosslight Software (Canada)","funders":"","keywords":"Voltage droop; Materials science; Optoelectronics; Light-emitting diode; Diode; Leakage (economics); Quantum efficiency; Electron; Gallium nitride; Layer (electronics); Physics; Voltage; Nanotechnology","retraction":null,"screen_n_in":null,"score":{"opus":0.005514214428727142,"gpt":0.2330019614828938,"spread":0.2274877470541666,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0002431616,0.0003002129,0.0003401085,0.00005535295,0.0002116483,0.000141179,0.0001600081,0.0001166703,0.000137086],"category_scores_gemma":[0.00002866556,0.0002438717,0.0001100205,0.0001075304,0.00005252065,0.00008426984,0.00001663447,0.0006197789,0.00005537316],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.00001922699,"about_ca_system_score_gemma":0.000105853,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.00002789932,"about_ca_topic_score_gemma":0.00001176651,"domain_scores_codex":[0.9983435,0.00004455593,0.0002528227,0.0004242622,0.0001784984,0.0007563957],"domain_scores_gemma":[0.9991217,0.0002696878,0.00008964992,0.0002804016,0.00004275348,0.0001958591],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.00004734275,0.000121719,0.0008056608,0.0000447594,0.00003100843,0.000002822928,0.00002080607,0.000005407892,0.7957994,0.1984578,0.000114048,0.004549211],"study_design_scores_gemma":[0.0006914806,0.0006188403,0.0003414255,0.00003963872,0.00005782093,0.000001888458,0.00001415129,0.001232762,0.9764329,0.007006485,0.01321053,0.0003520666],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9947123,0.0001573583,0.0002094624,0.0005629042,0.0002878259,0.0002195338,0.000009063744,0.0000634295,0.003778146],"genre_scores_gemma":[0.9987664,0.000008084204,0.0001784391,0.0002792058,0.0005505278,0.00003304309,0.00003917045,0.00004076433,0.0001043178],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.1914513,"threshold_uncertainty_score":0.9944799,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W1983815769","doi":"10.1021/nl4030819","title":"p-Type InN Nanowires","year":2013,"lang":"en","type":"article","venue":"Nano Letters","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":107,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"McGill University","funders":"","keywords":"Nanowire; Doping; Materials science; Dopant; Photoluminescence; Acceptor; Optoelectronics; Field-effect transistor; Condensed matter physics; Nanotechnology; Transistor; Physics","retraction":null,"screen_n_in":null,"score":{"opus":0.01069236084574317,"gpt":0.2230032096909094,"spread":0.2123108488451662,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":["insufficient_payload"],"consensus_categories":["insufficient_payload"],"category_scores_codex":[0.00004355609,0.0001165308,0.0001296385,0.00003419091,0.00005784553,0.00009122609,0.0001353649,0.00001994589,0.005005796],"category_scores_gemma":[0.000001932775,0.00009848889,0.00005095755,0.00008127126,0.00002807921,0.0001616446,0.00002771261,0.0000426773,0.001391293],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.000009452136,"about_ca_system_score_gemma":0.0000151327,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.001057602,"about_ca_topic_score_gemma":0.000001132519,"domain_scores_codex":[0.9993485,0.00002374514,0.000142329,0.0001654776,0.00008965393,0.0002303622],"domain_scores_gemma":[0.999637,0.00001981277,0.00005740613,0.0001930752,0.00003602324,0.00005668937],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.0000015404,0.00001299791,0.006421179,0.000003865984,0.00001777362,4.254193e-7,0.00005309447,0.000002928221,0.8788557,0.000416946,0.1129449,0.001268674],"study_design_scores_gemma":[0.0006675636,0.00004711526,0.006990436,0.00003668845,0.00002673595,0.000001022172,0.0001827251,0.00001146416,0.6576568,0.0009028355,0.3329805,0.0004960274],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.994117,0.00001874179,0.00003024205,0.002916395,0.0006949178,0.0001491171,0.000007777305,0.00003818135,0.002027602],"genre_scores_gemma":[0.9924386,7.874981e-7,0.0002021073,0.006579265,0.000277994,0.00002304733,0.00002800739,0.00001704488,0.0004331407],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.2211988,"threshold_uncertainty_score":0.9993863,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2088637045","doi":"10.1088/0957-4484/22/44/445202","title":"Full-color InGaN/GaN dot-in-a-wire light emitting diodes on silicon","year":2011,"lang":"en","type":"article","venue":"Nanotechnology","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":107,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"McGill University","funders":"","keywords":"Materials science; Light-emitting diode; Optoelectronics; Quantum dot; Indium; Diode; Epitaxy; Indium gallium nitride; Heterojunction; Phosphor; Voltage droop; Nanowire; Silicon; Gallium nitride; Voltage; Nanotechnology; Layer (electronics)","retraction":null,"screen_n_in":null,"score":{"opus":0.01784772097306866,"gpt":0.2350827204360445,"spread":0.2172349994629758,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0001597351,0.0002286426,0.0003511256,0.0002094887,0.00008974529,0.00002224633,0.0003314534,0.0002594014,0.0005837595],"category_scores_gemma":[0.00001972842,0.000205081,0.00008053455,0.0002041452,0.00006985885,0.00008432245,0.00007315734,0.0003015335,0.0001923837],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.00003298066,"about_ca_system_score_gemma":0.00003418228,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.0003516785,"about_ca_topic_score_gemma":0.00004801161,"domain_scores_codex":[0.9986737,0.00003948263,0.0003423703,0.0004037901,0.00008476496,0.0004558671],"domain_scores_gemma":[0.9993038,0.00003926244,0.0001666476,0.0004090415,0.00003239026,0.00004891555],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.00006586145,0.0001830516,0.01265441,0.00001990568,0.00003558072,0.00001535735,0.0006138843,0.00000409992,0.9478444,0.02580834,0.0001076207,0.01264746],"study_design_scores_gemma":[0.0005813321,0.0002650495,0.0005612431,0.00006212592,0.00001651884,0.00000274426,0.0005996042,0.00002465532,0.9871071,0.004394009,0.006122594,0.0002630408],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9950738,0.00004564587,0.00002271394,0.0003343263,0.0004136158,0.0002226602,0.00001751214,0.0001488041,0.0037209],"genre_scores_gemma":[0.9992632,0.000003007584,0.0002295156,0.0001348455,0.0001404018,0.00005912577,0.00001318149,0.00003054658,0.0001261208],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.03926266,"threshold_uncertainty_score":0.836296,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W4321482336","doi":"10.1021/acsami.2c21463","title":"Metal-Decorated InN Monolayer Senses N<sub>2</sub> against CO<sub>2</sub>","year":2023,"lang":"en","type":"article","venue":"ACS Applied Materials & Interfaces","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":105,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"McGill University","funders":"University of Science and Technology Liaoning; Department of Education of Liaoning Province; National Natural Science Foundation of China","keywords":"Monolayer; Materials science; Density functional theory; Adsorption; Selectivity; Metal; Transition metal; Band gap; Binding energy; Nanotechnology; Chemical physics; Computational chemistry; Physical chemistry; Optoelectronics; Catalysis; Chemistry; Atomic physics; Organic chemistry; Metallurgy","retraction":null,"screen_n_in":null,"score":{"opus":0.01728269372291161,"gpt":0.2470688280160077,"spread":0.2297861342930961,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":["metaepi_narrow","insufficient_payload"],"consensus_categories":[],"category_scores_codex":[0.0006712426,0.0008335912,0.001131755,0.0002896805,0.0003075327,0.0007184483,0.0005910874,0.0002243037,0.0004272024],"category_scores_gemma":[0.00001596444,0.0007646554,0.00009296732,0.0004874774,0.0001297935,0.0003698769,0.0003512781,0.00023042,0.003965834],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.00005826322,"about_ca_system_score_gemma":0.000104781,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.0000949863,"about_ca_topic_score_gemma":0.00001105541,"domain_scores_codex":[0.9961981,0.000173291,0.001150477,0.001016643,0.0003998016,0.001061692],"domain_scores_gemma":[0.9980633,0.0001556277,0.0006470305,0.0007671043,0.0001714111,0.0001954757],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.0001571817,0.0001073467,0.00006574079,0.00009936406,0.0003380395,0.00001148571,0.0003838821,0.0001038505,0.9856126,0.0006218344,0.009548053,0.002950673],"study_design_scores_gemma":[0.000893691,0.00006780237,0.0001361911,0.00009586559,0.0001183357,0.000001909457,0.0009037161,0.00000419553,0.9943655,0.001202656,0.001375737,0.0008344221],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9942822,0.00005401204,0.00001488336,0.0001590228,0.001778135,0.0009186247,0.001037758,0.0006145108,0.001140863],"genre_scores_gemma":[0.9969684,0.0001380742,0.00003423397,0.0004873238,0.000629203,0.0003805107,0.001118444,0.0001870535,0.00005678043],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.00875293,"threshold_uncertainty_score":0.9994804,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2485158864","doi":"10.1002/adma.201602645","title":"Controlled Coalescence of AlGaN Nanowire Arrays: An Architecture for Nearly Dislocation‐Free Planar Ultraviolet Photonic Device Applications","year":2016,"lang":"en","type":"article","venue":"Advanced Materials","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":104,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"McMaster University; McGill University","funders":"","keywords":"Materials science; Nanowire; Optoelectronics; Coalescence (physics); Sapphire; Planar; Ultraviolet; Diode; Dislocation; Photonics; Template; Epitaxy; Nanotechnology; Optics; Composite material; Laser","retraction":null,"screen_n_in":null,"score":{"opus":0.01028373203835737,"gpt":0.2554660814181696,"spread":0.2451823493798122,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0002703055,0.0002623781,0.0006201106,0.00005218947,0.0001229856,0.00005447925,0.0004549347,0.00006233204,0.0002803377],"category_scores_gemma":[0.00003420357,0.0001833361,0.000101883,0.00007337282,0.00009539059,0.0002486302,0.0000241576,0.00003236769,0.00001575832],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.00002485962,"about_ca_system_score_gemma":0.0001006293,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.0001053773,"about_ca_topic_score_gemma":0.00001949008,"domain_scores_codex":[0.9984277,0.00007972475,0.000589305,0.0004075845,0.0001587509,0.0003368777],"domain_scores_gemma":[0.9982556,0.0002083255,0.0004872161,0.0007034506,0.000237361,0.000108094],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.0003193261,0.00009599104,0.00008669676,0.00008487435,0.00005132076,1.176052e-7,0.00008864635,0.00001920678,0.9861194,0.009433127,0.00003975486,0.003661548],"study_design_scores_gemma":[0.00475719,0.0001265839,0.0002361754,0.0001377589,0.00007365812,6.744004e-7,0.000133285,0.000001696701,0.9754642,0.01446423,0.00434295,0.0002616584],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.943976,0.00005939065,0.04905753,0.0001892386,0.0003138765,0.002376427,0.003782978,0.00006788941,0.0001766241],"genre_scores_gemma":[0.9913799,0.000009901149,0.006369215,0.00008452219,0.0002427996,0.001445191,0.0003024201,0.0000443829,0.0001216866],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.04740384,"threshold_uncertainty_score":0.7476228,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2415094868","doi":"10.1021/acs.nanolett.5b02515","title":"Alternating-Current InGaN/GaN Tunnel Junction Nanowire White-Light Emitting Diodes","year":2015,"lang":"en","type":"article","venue":"Nano Letters","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":104,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":true,"ca_fund":true,"ca_venue":false,"about_ca":false},"ca_institutions":"McGill University","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Light-emitting diode; Optoelectronics; Materials science; Phosphor; Diode; Nanowire; Voltage droop; Wide-bandgap semiconductor; Light emission; Doping; Voltage; Gallium nitride; Tunnel junction; Solid-state lighting; Layer (electronics); Nanotechnology; Electrical engineering; Quantum tunnelling; Voltage source","retraction":null,"screen_n_in":null,"score":{"opus":0.0236140699848496,"gpt":0.2537248144127369,"spread":0.2301107444278873,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0002773251,0.000240776,0.0002507659,0.0000805996,0.0001365125,0.0001597026,0.0002151095,0.00003900482,0.0001422145],"category_scores_gemma":[0.00001377459,0.0002163476,0.0001120741,0.0001265976,0.00002828971,0.0001893813,0.000053229,0.0001293704,0.0001270717],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.00006374132,"about_ca_system_score_gemma":0.00004627923,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.0002559648,"about_ca_topic_score_gemma":0.000005844195,"domain_scores_codex":[0.9986075,0.00006954916,0.0003375095,0.0003468378,0.0002612609,0.0003773245],"domain_scores_gemma":[0.9992504,0.00002214839,0.0002310985,0.0002604162,0.00007981894,0.0001560989],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.00001381913,0.0000620579,0.04783486,0.0000333297,0.00004873461,0.0000026411,0.001168564,0.0002013361,0.9287401,0.0002118291,0.01440734,0.00727534],"study_design_scores_gemma":[0.003129072,0.0001216878,0.002873427,0.0003996594,0.0001701086,0.000006640698,0.001925358,0.0002815976,0.7034357,0.0005602899,0.2857105,0.001385998],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.994001,0.0000972502,0.0004969306,0.001189176,0.00291574,0.0001644405,0.00002221503,0.00007679183,0.00103641],"genre_scores_gemma":[0.9972177,0.000001165371,0.0002109681,0.0006929728,0.001565741,0.00002742761,0.00007668762,0.0000367771,0.0001705761],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.2713031,"threshold_uncertainty_score":0.8822401,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W1976926230","doi":"10.1007/s11661-013-1622-1","title":"Progress in Indium Gallium Nitride Materials for Solar Photovoltaic Energy Conversion","year":2013,"lang":"en","type":"article","venue":"Metallurgical and Materials Transactions A","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":103,"is_retracted":false,"has_abstract":false,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"Queen's University","funders":"","keywords":"Photovoltaic system; Engineering physics; Solar energy; Band gap; Optoelectronics; Materials science; Indium; Gallium nitride; Photovoltaics; Indium gallium nitride; Nanotechnology; Electrical engineering; Engineering","retraction":null,"screen_n_in":null,"score":{"opus":0.01001620930203644,"gpt":0.2208157717797703,"spread":0.2107995624777338,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":["insufficient_payload"],"consensus_categories":[],"category_scores_codex":[0.0002934066,0.0002574876,0.000541481,0.0001010307,0.0001459836,0.0003577787,0.0001204984,0.0001125977,0.01319899],"category_scores_gemma":[0.000001896781,0.0002244192,0.00009249576,0.00009299686,0.00009241878,0.0003258705,0.00001550892,0.00005437655,0.00003977399],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.00001900286,"about_ca_system_score_gemma":0.00003615679,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.003865763,"about_ca_topic_score_gemma":0.00002971114,"domain_scores_codex":[0.9984452,0.0000997179,0.0005253235,0.0003810051,0.0001384151,0.000410397],"domain_scores_gemma":[0.9994271,0.00005042643,0.0001356458,0.0001550837,0.00009492502,0.0001367591],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.0001135918,0.0002424515,0.00005932309,0.0001560483,0.00009040751,0.000002963718,0.0000680023,0.000007444147,0.9975651,0.0006669571,0.0001096121,0.0009181167],"study_design_scores_gemma":[0.001773854,0.0001002301,0.0008138235,0.00005644551,0.000100885,0.000006702838,0.0001626076,0.00008475166,0.9809164,0.002057,0.0135506,0.0003766921],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.984755,0.00007726447,0.01318216,0.0001044691,0.0006721901,0.0007337127,0.0003750262,0.00004549153,0.0000546911],"genre_scores_gemma":[0.9974359,0.00003456969,0.0006236491,0.00007280476,0.0001866469,0.00100186,0.0001798642,0.00003346646,0.0004312301],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.01664867,"threshold_uncertainty_score":0.9877031,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W1972506432","doi":"10.1002/pssa.201026489","title":"Effects of polarization charge on the photovoltaic properties of InGaN solar cells","year":2010,"lang":"en","type":"article","venue":"physica status solidi (a)","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":102,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"Crosslight Software (Canada)","funders":"","keywords":"Optoelectronics; Photovoltaic system; Polarization (electrochemistry); Materials science; Open-circuit voltage; Electric field; Charge carrier; Voltage; Solar cell; Short circuit; Theory of solar cells; Charge (physics); Solar cell efficiency; Physics; Electrical engineering; Chemistry","retraction":null,"screen_n_in":null,"score":{"opus":0.00971321606769487,"gpt":0.2139967220223031,"spread":0.2042835059546083,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00008877987,0.0001557964,0.0002571289,0.00003695205,0.00008171581,0.00002520086,0.0001602041,0.00003112737,0.00007923008],"category_scores_gemma":[0.00001077632,0.0001032087,0.00009845999,0.0001090727,0.00008443258,0.00009231964,0.00003713508,0.0001583597,0.00002417377],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.000004854873,"about_ca_system_score_gemma":0.00005608088,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.0006872757,"about_ca_topic_score_gemma":0.000002777431,"domain_scores_codex":[0.9991561,0.00005769924,0.0002079262,0.0001626481,0.0001635326,0.0002520722],"domain_scores_gemma":[0.9992454,0.00008527443,0.0002504275,0.0002789268,0.00009053899,0.00004945423],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.00001740923,0.0002347392,0.0005263763,0.0001364664,0.00004505097,8.238304e-8,0.0007375955,0.000002678385,0.9911489,0.006928588,0.00009316124,0.0001289097],"study_design_scores_gemma":[0.0002560186,0.00007199648,0.000368903,0.0000617945,0.00003734715,2.084466e-8,0.00007774826,0.00008166954,0.997557,0.0003499106,0.001027688,0.000109924],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9987202,0.00001313182,0.00002232296,0.00002601343,0.0003140798,0.0003938135,0.00007403093,0.0000146934,0.0004217039],"genre_scores_gemma":[0.9995944,0.000003182283,0.00002844924,0.00003968818,0.0001936781,0.00003324589,0.00001473581,0.00002464261,0.00006799967],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.006578677,"threshold_uncertainty_score":0.4208728,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2321753895","doi":"10.1021/nl300476d","title":"Tuning the Surface Charge Properties of Epitaxial InN Nanowires","year":2012,"lang":"en","type":"article","venue":"Nano Letters","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":102,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"McGill University","funders":"","keywords":"Doping; Materials science; Nanowire; Fermi level; Epitaxy; Condensed matter physics; Surface states; Valence (chemistry); Effective mass (spring–mass system); Electron; Nanotechnology; Optoelectronics; Chemistry; Surface (topology); Physics","retraction":null,"screen_n_in":null,"score":{"opus":0.02184058460423709,"gpt":0.2235849050080835,"spread":0.2017443204038464,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0002165089,0.0001158848,0.000157629,0.00001758556,0.00009220696,0.00002881361,0.0001670221,0.00001850425,0.0003161487],"category_scores_gemma":[0.000003585492,0.00007188109,0.00006935103,0.00006079835,0.00006931104,0.0001686865,0.00004120333,0.00005323634,0.00005468546],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.000008539077,"about_ca_system_score_gemma":0.00001592093,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.0004520747,"about_ca_topic_score_gemma":7.199969e-7,"domain_scores_codex":[0.9992549,0.00006362067,0.0001816429,0.00009835977,0.000121613,0.0002798376],"domain_scores_gemma":[0.9996055,0.0000233151,0.0001166763,0.0001913838,0.00002404199,0.0000391026],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.000007132811,0.00002582303,0.01780004,0.00001635847,0.00003202835,7.223967e-8,0.0009137138,0.00000570555,0.9764541,0.0006752882,0.00387364,0.0001960377],"study_design_scores_gemma":[0.0001825784,0.000008694017,0.0008136008,0.00003907187,0.00001879134,3.139679e-7,0.0002638157,0.000004174054,0.9744045,0.000008384325,0.0241374,0.0001186524],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9968554,0.0002034875,0.00002211138,0.001823044,0.0006063784,0.0001411322,0.00001910088,0.00001582956,0.0003135351],"genre_scores_gemma":[0.9982917,0.000001522855,0.0000510816,0.001134,0.0003646548,0.000009310797,0.00000721416,0.00001567325,0.0001248695],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.02026376,"threshold_uncertainty_score":0.3461607,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2611276947","doi":"10.1021/acs.nanolett.7b01068","title":"AlN/h-BN Heterostructures for Mg Dopant-Free Deep Ultraviolet Photonics","year":2017,"lang":"en","type":"article","venue":"Nano Letters","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":101,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":true,"ca_fund":true,"ca_venue":false,"about_ca":false},"ca_institutions":"McMaster University; McGill University","funders":"Army Research Office; Natural Sciences and Engineering Research Council of Canada; Government of Canada","keywords":"Materials science; Optoelectronics; Light-emitting diode; Dopant; Heterojunction; Ultraviolet; Doping; Boron nitride; Diode; Nanowire; Wide-bandgap semiconductor; Electrode; Nanotechnology; Chemistry","retraction":null,"screen_n_in":null,"score":{"opus":0.01328434898896452,"gpt":0.2556271836465452,"spread":0.2423428346575807,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0001092474,0.0002356836,0.0002849888,0.00003385573,0.0004323213,0.0003558038,0.0008139138,0.0000580786,0.0003387185],"category_scores_gemma":[0.00001616337,0.0002066838,0.0001849008,0.00001601021,0.00009381172,0.0001933483,0.00007189518,0.00007723681,0.00001947686],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.00001833942,"about_ca_system_score_gemma":0.00002179659,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.0003730452,"about_ca_topic_score_gemma":0.00002210265,"domain_scores_codex":[0.9988511,0.00002057596,0.0002351091,0.0003371242,0.000132558,0.00042353],"domain_scores_gemma":[0.998531,0.00004229432,0.0002659597,0.001029379,0.00004047406,0.00009085768],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.00002748683,0.00001739632,0.004455843,0.0000274284,0.00005729667,0.00000154137,0.00009063075,0.00001509,0.9849712,0.0005899426,0.008327817,0.001418295],"study_design_scores_gemma":[0.002532424,0.00006176057,0.004521424,0.00005094849,0.00009535751,0.00000182203,0.0001018212,0.00004117129,0.9409156,0.002806033,0.04832437,0.000547301],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9956654,0.00002739362,0.000547395,0.001058107,0.001298962,0.0003848138,0.0004489972,0.00003307783,0.0005358846],"genre_scores_gemma":[0.9958841,0.000002114647,0.001445772,0.001780783,0.0005709309,0.00006685111,0.0001111125,0.00003963261,0.00009874246],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.04405567,"threshold_uncertainty_score":0.8428319,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2416970256","doi":"10.1021/acs.nanolett.5b02133","title":"Three-Dimensional Quantum Confinement of Charge Carriers in Self-Organized AlGaN Nanowires: A Viable Route to Electrically Injected Deep Ultraviolet Lasers","year":2015,"lang":"en","type":"article","venue":"Nano Letters","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":99,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":true,"ca_fund":true,"ca_venue":false,"about_ca":false},"ca_institutions":"McMaster University; McGill University","funders":"Army Research Office; Natural Sciences and Engineering Research Council of Canada","keywords":"Optoelectronics; Nanowire; Ultraviolet; Charge carrier; Quantum dot; Materials science; Laser; Nanotechnology; Optics; Physics","retraction":null,"screen_n_in":null,"score":{"opus":0.00989911823521255,"gpt":0.2227248144296279,"spread":0.2128256961944153,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.0003054976,0.0002786355,0.0004869608,0.0001867004,0.00005012461,0.000039288,0.000262703,0.00006733311,0.0003841899],"category_scores_gemma":[0.00002052821,0.000261358,0.00009175907,0.0004659769,0.00003197312,0.00009173223,0.00004800707,0.0001139965,0.00005831966],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.0001232966,"about_ca_system_score_gemma":0.0002552596,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.004218535,"about_ca_topic_score_gemma":0.0001430607,"domain_scores_codex":[0.9981128,0.00007966148,0.000534652,0.0003923638,0.0003496832,0.0005308709],"domain_scores_gemma":[0.9990639,0.00005497412,0.000193222,0.0002928917,0.0001336562,0.000261346],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.0001247167,0.0001477209,0.01492844,0.00001800911,0.00009616413,0.000005984347,0.0006439062,0.000135376,0.9783221,0.0003838657,0.005054771,0.0001389117],"study_design_scores_gemma":[0.005385683,0.0004490759,0.001990092,0.0001141113,0.00009765427,0.0000021917,0.0003820118,0.0004357881,0.9844283,0.0001680521,0.005834853,0.0007121385],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9978095,0.00002519085,0.0002982487,0.0006927456,0.0003537912,0.0005677735,0.00009688747,0.00005183179,0.0001040334],"genre_scores_gemma":[0.9971692,5.21053e-7,0.0007661706,0.001699273,0.0001095302,0.00005328517,0.0001404855,0.00003858234,0.00002294482],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.01293835,"threshold_uncertainty_score":0.9999838,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2061080367","doi":"10.1063/1.2193469","title":"Potential performance of indium-nitride-based devices","year":2006,"lang":"en","type":"article","venue":"Applied Physics Letters","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":96,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"University of Regina","funders":"","keywords":"Indium; Indium nitride; Nitride; Optoelectronics; Materials science; Wurtzite crystal structure; Electric field; Wide-bandgap semiconductor; Engineering physics; Nanotechnology; Physics; Metallurgy; Quantum mechanics","retraction":null,"screen_n_in":null,"score":{"opus":0.006195254002516786,"gpt":0.1955664004313228,"spread":0.189371146428806,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00007563416,0.0002107526,0.0002739521,0.00004303806,0.00008365003,0.00004259482,0.0002099611,0.00003103338,0.0001783021],"category_scores_gemma":[1.659096e-7,0.0002053413,0.000109374,0.000152125,0.00007662931,0.00009873973,0.00002844061,0.00009941676,0.0000471651],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.00001248551,"about_ca_system_score_gemma":0.00003742419,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.000334003,"about_ca_topic_score_gemma":0.000001095141,"domain_scores_codex":[0.9989434,0.0000160874,0.0003038823,0.0002422834,0.0002043244,0.0002900135],"domain_scores_gemma":[0.9993733,0.00002933304,0.0002607585,0.0002631668,0.00003499452,0.00003847334],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.00002739548,0.00009804941,0.01225075,0.00006121874,0.0000343608,4.415019e-7,0.00002121896,0.008721697,0.9728063,0.004541453,0.0005299637,0.0009071784],"study_design_scores_gemma":[0.0008662308,0.00002036817,0.008722105,0.00002126485,0.00006656363,1.073744e-7,0.00002914143,0.0002180271,0.9887164,0.0004254504,0.0006185337,0.000295819],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9955472,0.000006153236,0.001869179,0.00006743101,0.0001650661,0.0002034755,0.0000753897,0.00003362286,0.002032481],"genre_scores_gemma":[0.9980184,1.311005e-7,0.000458734,0.0004678331,0.0007783893,0.00003314228,0.0002001681,0.00003023184,0.00001299736],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.01591011,"threshold_uncertainty_score":0.8373574,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W3108257971","doi":"10.1002/adfm.202008452","title":"Sec‐Eliminating the SARS‐CoV‐2 by AlGaN Based High Power Deep Ultraviolet Light Source","year":2020,"lang":"en","type":"article","venue":"Advanced Functional Materials","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":95,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"Ministry of Education and Child Care","funders":"National Natural Science Foundation of China","keywords":"Materials science; Ultraviolet; Severe acute respiratory syndrome coronavirus 2 (SARS-CoV-2); Coronavirus disease 2019 (COVID-19); Optoelectronics; Power (physics); Ultraviolet a; Light source; Ultraviolet light; 2019-20 coronavirus outbreak; Virology; Optics; Biology; Physics","retraction":null,"screen_n_in":null,"score":{"opus":0.00989299715267852,"gpt":0.2169437300788586,"spread":0.2070507329261801,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":["insufficient_payload"],"consensus_categories":[],"category_scores_codex":[0.0001817359,0.0003199945,0.0003616846,0.0000248117,0.0002677377,0.0001792803,0.0002496684,0.00006486614,0.004234559],"category_scores_gemma":[0.0000285318,0.000240297,0.0001014467,0.0001235959,0.00005097016,0.0002187963,0.00005573162,0.0001172719,0.0002402805],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.00002202464,"about_ca_system_score_gemma":0.00004152837,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.00009779242,"about_ca_topic_score_gemma":9.931478e-7,"domain_scores_codex":[0.998311,0.0001302339,0.0004635559,0.0004506885,0.000265535,0.0003789347],"domain_scores_gemma":[0.9990873,0.0001464617,0.0002921327,0.0002662142,0.0001064174,0.0001014913],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.0001232393,0.00004630833,0.0001079666,0.00002409838,0.00004122944,0.000001024849,0.0001193858,0.0003653768,0.9932341,0.001586998,0.003675892,0.0006743855],"study_design_scores_gemma":[0.0008187853,0.0000959868,0.0003571241,0.00002654314,0.00004279172,0.00000106863,0.0003187665,0.00003399635,0.9594883,0.0006109654,0.0379038,0.0003018716],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9856526,0.00005218663,0.00860883,0.00275877,0.001346564,0.0003712458,0.0005574952,0.0001098023,0.0005424895],"genre_scores_gemma":[0.9939161,0.000001269466,0.0004488126,0.003891217,0.00076126,0.0001008193,0.0006952934,0.00005904025,0.0001261735],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.03422791,"threshold_uncertainty_score":0.9966757,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2034522069","doi":"10.1016/s0022-0248(99)00634-x","title":"Determination of tilt in the lateral epitaxial overgrowth of GaN using X-ray diffraction","year":2000,"lang":"en","type":"article","venue":"Journal of Crystal Growth","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":94,"is_retracted":false,"has_abstract":false,"routes":{"ca_aff":false,"ca_fund":true,"ca_venue":false,"about_ca":false},"ca_institutions":"","funders":"Office of Naval Research; Natural Sciences and Engineering Research Council of Canada; National Science Foundation","keywords":"Tilt (camera); Diffraction; Materials science; Epitaxy; Optics; Scanning electron microscope; Aspect ratio (aeronautics); Condensed matter physics; Crystallography; Layer (electronics); Optoelectronics; Chemistry; Geometry; Physics; Nanotechnology; Composite material; Mathematics","retraction":null,"screen_n_in":null,"score":{"opus":0.01312355467278992,"gpt":0.2533832282656481,"spread":0.2402596735928582,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0003161788,0.00008758832,0.0002371785,0.00009392692,0.000024376,0.00002317764,0.0001333191,0.00003140967,0.0003520342],"category_scores_gemma":[0.000005768493,0.00006101378,0.0001192727,0.00009450759,0.000031346,0.0003237149,0.000006072367,0.0001086701,5.845764e-7],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.00001835256,"about_ca_system_score_gemma":0.00004155163,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.0002588812,"about_ca_topic_score_gemma":0.000003199751,"domain_scores_codex":[0.9989994,0.00009921953,0.0005174138,0.00006048648,0.000213257,0.0001102706],"domain_scores_gemma":[0.999214,0.00005200255,0.0005379257,0.0000752698,0.00009499906,0.00002578335],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"observational","study_design_scores_codex":[0.0002742364,0.0003128087,0.03295768,0.00008076605,0.00003943586,0.000007310912,0.001448748,0.0002463689,0.9606705,0.0006545689,0.00002867461,0.003278922],"study_design_scores_gemma":[0.006846689,0.001881805,0.6088069,0.0009403207,0.0004367094,0.0001097687,0.002607606,0.002517401,0.3460949,0.02781589,0.00124345,0.0006985212],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9987818,0.00001529018,0.000254237,0.00003044006,0.0001326691,0.00006811649,0.00001605467,0.000001111189,0.0007003035],"genre_scores_gemma":[0.9994006,0.000004390777,0.0002741169,0.00001401241,0.00027838,5.544265e-7,0.00000326469,0.000007782673,0.00001690794],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.6145756,"threshold_uncertainty_score":0.3854527,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W1540256684","doi":"10.1063/1.4927602","title":"An electrically injected AlGaN nanowire laser operating in the ultraviolet-C band","year":2015,"lang":"en","type":"article","venue":"Applied Physics Letters","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":93,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"McMaster University; McGill University","funders":"","keywords":"Nanowire; Materials science; Optoelectronics; Molecular beam epitaxy; Heterojunction; Wide-bandgap semiconductor; Substrate (aquarium); Laser; Ultraviolet; Epitaxy; Nanotechnology; Optics; Layer (electronics); Physics","retraction":null,"screen_n_in":null,"score":{"opus":0.01413358827699581,"gpt":0.2377019359558776,"spread":0.2235683476788818,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0002529374,0.0002212835,0.0002287347,0.00002965735,0.00009741258,0.0001820969,0.0003646128,0.00003581629,0.00002885201],"category_scores_gemma":[0.000001927319,0.0001674596,0.0000486013,0.0002762866,0.00004047486,0.0001497563,0.00001538359,0.0002196303,0.00003819932],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.00002410916,"about_ca_system_score_gemma":0.00005780138,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.0003935252,"about_ca_topic_score_gemma":0.000005043801,"domain_scores_codex":[0.9987668,0.0001005833,0.0002453006,0.0003080477,0.0002151806,0.0003640625],"domain_scores_gemma":[0.9993623,0.00005826966,0.00009468762,0.0003591031,0.00003449476,0.00009111892],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.00000875772,0.0001290513,0.003419344,0.000004533943,0.00002062664,0.000002005761,0.001551879,0.0008312867,0.9877,0.003636581,0.001215855,0.001480036],"study_design_scores_gemma":[0.002868511,0.0001345055,0.005840597,0.00003150561,0.00007366866,0.000001372396,0.002965632,0.0002542813,0.9823448,0.002840538,0.001701783,0.0009427937],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9963455,0.00000399466,0.0005008075,0.0002536326,0.00009479724,0.0003376256,0.00001827234,0.00003356917,0.002411861],"genre_scores_gemma":[0.9955869,1.947356e-7,0.0002062591,0.00331006,0.0005690573,0.00008885687,0.0002006185,0.00003130027,0.000006702019],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.005355232,"threshold_uncertainty_score":0.6828806,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2268363440","doi":"10.1021/acs.nanolett.5b03040","title":"Surface Emitting, High Efficiency Near-Vacuum Ultraviolet Light Source with Aluminum Nitride Nanowires Monolithically Grown on Silicon","year":2015,"lang":"en","type":"article","venue":"Nano Letters","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":91,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":true,"ca_fund":true,"ca_venue":false,"about_ca":false},"ca_institutions":"McGill University","funders":"Army Research Office; Natural Sciences and Engineering Research Council of Canada","keywords":"Materials science; Light-emitting diode; Optoelectronics; Nanowire; Electroluminescence; Ultraviolet; Nitride; Molecular beam epitaxy; Light emission; Planar; Aluminium; Substrate (aquarium); Silicon; Epitaxy; Nanotechnology; Layer (electronics)","retraction":null,"screen_n_in":null,"score":{"opus":0.01022178271498891,"gpt":0.2180683391220928,"spread":0.2078465564071039,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.000336288,0.0004079496,0.000435858,0.00005573477,0.000195769,0.0002492896,0.0004027557,0.0001034691,0.0001359199],"category_scores_gemma":[0.00001384491,0.000316741,0.0001144927,0.0002029613,0.000124681,0.0001551474,0.00005031936,0.000240765,0.0002102151],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.00006050148,"about_ca_system_score_gemma":0.0001403064,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.001610211,"about_ca_topic_score_gemma":0.00000567443,"domain_scores_codex":[0.9978008,0.0001340033,0.0003947434,0.0005849773,0.0004406365,0.0006448992],"domain_scores_gemma":[0.9987373,0.0001043508,0.0002537665,0.0005164253,0.000108479,0.0002797089],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.0001220598,0.0001605444,0.01820414,0.00002076507,0.00005690906,0.00001008192,0.0008053931,0.001213118,0.9705644,0.0003710309,0.008170896,0.0003006605],"study_design_scores_gemma":[0.002420506,0.000438394,0.001631437,0.0001916816,0.00009337877,0.000005632027,0.0005433639,0.00007019771,0.9659667,0.0001147286,0.02769311,0.0008308538],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9950551,0.00002878247,0.0002315034,0.00302687,0.0004648447,0.0003354161,0.00004785965,0.0001207018,0.0006889436],"genre_scores_gemma":[0.9960148,7.016573e-7,0.0003839741,0.002492926,0.0004356752,0.00002091371,0.00006184882,0.00006662357,0.0005224826],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.01952221,"threshold_uncertainty_score":0.9999285,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2058198868","doi":"10.1063/1.2135876","title":"Steady-state and transient electron transport within bulk wurtzite indium nitride: An updated semiclassical three-valley Monte Carlo simulation analysis","year":2005,"lang":"en","type":"article","venue":"Applied Physics Letters","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":90,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"University of Regina","funders":"","keywords":"Wurtzite crystal structure; Monte Carlo method; Electron; Semiclassical physics; Physics; Kinetic Monte Carlo; Condensed matter physics; Statistical physics; Computational physics; Materials science; Quantum mechanics; Mathematics; Quantum","retraction":null,"screen_n_in":null,"score":{"opus":0.0101335070754778,"gpt":0.232722979198149,"spread":0.2225894721226712,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.0001914931,0.0004212634,0.0005672189,0.0001195538,0.000157679,0.0001062977,0.0001970476,0.00006919345,0.0000965108],"category_scores_gemma":[2.522071e-7,0.0004144017,0.0001836339,0.0004391407,0.00008586288,0.000316479,0.0000168515,0.0002905397,0.00001800796],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.00005163482,"about_ca_system_score_gemma":0.00003933631,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.0003942437,"about_ca_topic_score_gemma":0.0001468405,"domain_scores_codex":[0.9979605,0.00004847797,0.000519692,0.0006446594,0.0003132396,0.0005134069],"domain_scores_gemma":[0.9990618,0.00003697184,0.0002588181,0.0003924306,0.00005028953,0.000199693],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"simulation_or_modeling","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.0001170403,0.0001436347,0.003634296,0.00001118994,0.00066715,0.000001414835,0.001702498,0.4997308,0.4921243,0.0005469811,0.00007829256,0.001242401],"study_design_scores_gemma":[0.01037083,0.0003755588,0.03113503,0.00006068925,0.007710666,0.000001889931,0.0008554051,0.3173181,0.6169519,0.001679565,0.008656313,0.004884121],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9888627,0.00001040634,0.009949735,0.0002259797,0.00006762418,0.0004708344,0.0001732257,0.00007218837,0.0001672993],"genre_scores_gemma":[0.9975872,0.000001160055,0.0003580528,0.0007287974,0.0004762471,0.00004652024,0.0007114338,0.00005879841,0.00003177152],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.1824128,"threshold_uncertainty_score":0.9998308,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2263028563","doi":"10.1038/lsa.2016.30","title":"Electrically driven, phosphor-free, white light-emitting diodes using gallium nitride-based double concentric truncated pyramid structures","year":2016,"lang":"en","type":"article","venue":"Light Science & Applications","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":89,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"Institut interdisciplinaire d'innovation technologique; Université de Sherbrooke","funders":"Korea Advanced Institute of Science and Technology; Ministry of Knowledge Economy; National Research Foundation","keywords":"Phosphor; Light-emitting diode; Electroluminescence; Materials science; Cathodoluminescence; Optoelectronics; Gallium nitride; Luminous efficacy; Diode; Indium gallium nitride; Photoluminescence; Optics; Nitride; Luminescence; Nanotechnology; Layer (electronics); Physics","retraction":null,"screen_n_in":null,"score":{"opus":0.01344188422990457,"gpt":0.2583981318365786,"spread":0.2449562476066741,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0002942178,0.0003046919,0.0003150006,0.0001876907,0.0007871615,0.0003489046,0.001163541,0.00007117455,0.0003915813],"category_scores_gemma":[0.00001948744,0.0002175925,0.0001225301,0.001673615,0.000303198,0.0003887877,0.0001069726,0.0001253698,0.00005225184],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.0001487328,"about_ca_system_score_gemma":0.0006608856,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.0001424281,"about_ca_topic_score_gemma":0.000004902,"domain_scores_codex":[0.9974692,0.00003019288,0.0005045965,0.0007669618,0.0004748431,0.0007541477],"domain_scores_gemma":[0.9979603,0.00008342507,0.000390462,0.0008963116,0.0003900443,0.0002794929],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.00001653207,0.00007687646,0.01355471,0.00001052586,0.00001296625,3.834475e-7,0.00004718045,0.0003989191,0.9692744,0.01507164,0.0002307356,0.001305136],"study_design_scores_gemma":[0.00112636,0.00003094759,0.001568189,0.00004440428,0.00005775362,8.498038e-7,0.00003721912,0.00146509,0.9772365,0.005482705,0.01254723,0.0004027707],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9441949,0.0001242753,0.05082084,0.001609136,0.0002390759,0.001047301,0.0001625107,0.0001709223,0.001631025],"genre_scores_gemma":[0.9947246,0.000001288797,0.004418776,0.0001554583,0.0002988008,0.0002045152,0.0000223228,0.00003078992,0.0001434018],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.05052973,"threshold_uncertainty_score":0.8873166,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2572177538","doi":"10.1063/1.4973999","title":"On the mechanism of highly efficient p-type conduction of Mg-doped ultra-wide-bandgap AlN nanostructures","year":2017,"lang":"en","type":"article","venue":"Applied Physics Letters","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":87,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":true,"ca_fund":true,"ca_venue":false,"about_ca":false},"ca_institutions":"McGill University","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Materials science; Doping; Dopant; Band gap; Impurity; Thermal conduction; Nanowire; Electron mobility; Wide-bandgap semiconductor; Optoelectronics; Electrical resistivity and conductivity; Condensed matter physics; Conduction band; Nanostructure; Conductivity; Nanotechnology; Chemistry; Electron","retraction":null,"screen_n_in":null,"score":{"opus":0.01505036915868572,"gpt":0.2282668195803451,"spread":0.2132164504216594,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0001309483,0.0002130866,0.0003208563,0.00002445986,0.0002312306,0.00005952143,0.0004079545,0.00003780029,0.0001384846],"category_scores_gemma":[0.000006529789,0.0001528614,0.000115614,0.00005565062,0.0001725878,0.00004853752,0.00003935614,0.0001243127,0.0000193487],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.00001134424,"about_ca_system_score_gemma":0.00002743715,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.0002575502,"about_ca_topic_score_gemma":5.688681e-7,"domain_scores_codex":[0.9989935,0.00003240209,0.000277891,0.0002530724,0.0002278771,0.000215287],"domain_scores_gemma":[0.9984567,0.0001296737,0.0005920273,0.0007229123,0.00006108432,0.0000376235],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.00003785685,0.00004366222,0.00005598562,0.00001882548,0.00007414183,1.481913e-7,0.0002115846,0.0006169887,0.7538177,0.2441876,0.000710814,0.0002246635],"study_design_scores_gemma":[0.0004495848,0.00003318064,0.000295187,0.00002715891,0.0000553246,8.992608e-8,0.0001247925,0.00001287207,0.9872375,0.0114885,0.0001197165,0.000156115],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9956422,0.000002959444,0.0005024499,0.0003527616,0.0006383147,0.000359685,0.00007034357,0.00001299329,0.002418322],"genre_scores_gemma":[0.9991266,7.819206e-7,0.00004404177,0.0004817074,0.0002458929,0.00001941585,0.00003979922,0.00002627167,0.00001545097],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.2334198,"threshold_uncertainty_score":0.6233505,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2549339549","doi":"10.1063/1.4967180","title":"An electrically pumped 239 nm AlGaN nanowire laser operating at room temperature","year":2016,"lang":"en","type":"article","venue":"Applied Physics Letters","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":85,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"McGill University","funders":"","keywords":"Nanowire; Materials science; Optoelectronics; Molecular beam epitaxy; Laser; Atmospheric temperature range; Substrate (aquarium); Wide-bandgap semiconductor; Wavelength; Ultraviolet; Scattering; Spontaneous emission; Epitaxy; Optics; Nanotechnology; Layer (electronics)","retraction":null,"screen_n_in":null,"score":{"opus":0.006738284205510927,"gpt":0.2139664878364543,"spread":0.2072282036309434,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.0001092593,0.0003768761,0.0003605461,0.00002587728,0.0002886136,0.0001694814,0.0003502128,0.00007586784,0.0004289056],"category_scores_gemma":[0.000001450171,0.0002727378,0.000121825,0.00016535,0.00004876537,0.0002560552,0.00007005405,0.0001583538,0.0002409498],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.0000641504,"about_ca_system_score_gemma":0.00004502923,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.00006357409,"about_ca_topic_score_gemma":0.000003342663,"domain_scores_codex":[0.99824,0.00005705944,0.0003078555,0.0005842854,0.0002358505,0.0005749831],"domain_scores_gemma":[0.9989991,0.00007208069,0.0001581635,0.00054744,0.00004650219,0.0001766905],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.00001793642,0.00008041712,0.001784326,0.000009521376,0.00007082348,0.000001959954,0.0001610017,0.00007040903,0.9868001,0.004365146,0.002745229,0.00389315],"study_design_scores_gemma":[0.0009728788,0.00003538959,0.0005645202,0.00002582192,0.00004098608,4.409092e-7,0.00005180471,0.00001357133,0.9950421,0.0004128621,0.002336761,0.0005028189],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9970616,0.00000524742,0.0004917013,0.0006383767,0.0002046417,0.0003421479,0.00009522954,0.0001019606,0.001059101],"genre_scores_gemma":[0.9951176,9.037436e-7,0.0003402157,0.002658899,0.001271246,0.00009770544,0.0002059711,0.00007956543,0.0002278939],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.008242064,"threshold_uncertainty_score":0.9999725,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2014148571","doi":"10.1039/c3nr00387f","title":"Growth of large-scale vertically aligned GaN nanowires and their heterostructures with high uniformity on SiOx by catalyst-free molecular beam epitaxy","year":2013,"lang":"en","type":"article","venue":"Nanoscale","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":83,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"McGill University","funders":"","keywords":"Nanowire; Heterojunction; Materials science; Molecular beam epitaxy; Optoelectronics; Epitaxy; Nanoscopic scale; Nanotechnology; Layer (electronics)","retraction":null,"screen_n_in":null,"score":{"opus":0.003184964981147364,"gpt":0.1895287775818569,"spread":0.1863438126007096,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00007201303,0.0002729215,0.0003862395,0.00004238971,0.00009447757,0.00006564533,0.0002847915,0.00008168301,0.0002464806],"category_scores_gemma":[0.000007724962,0.0001829441,0.00007491099,0.00008897597,0.0001215268,0.0001509714,0.00008571161,0.00007162992,0.00001002535],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.00001142986,"about_ca_system_score_gemma":0.00002674851,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.001669352,"about_ca_topic_score_gemma":0.00002848344,"domain_scores_codex":[0.9988022,0.00004636395,0.0002787308,0.0003391136,0.0001812366,0.0003523905],"domain_scores_gemma":[0.9990738,0.00005134273,0.0001306799,0.0004842861,0.0001081574,0.0001517519],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.00004300459,0.0001424854,0.006745151,0.00004392332,0.00007388781,7.302386e-7,0.0001728479,0.000003211377,0.9895459,0.001399531,0.001625228,0.0002041263],"study_design_scores_gemma":[0.0008656536,0.0003045925,0.00627445,0.0000435275,0.00003381005,9.262773e-7,0.0001985348,0.00001458143,0.9861283,0.005747302,0.0001548307,0.000233527],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9980621,0.00006211631,0.0001947447,0.0001947719,0.00008719522,0.0003385099,0.000668399,0.00002754579,0.0003646691],"genre_scores_gemma":[0.9991041,0.0000027431,0.000321839,0.0002093914,0.00004717204,0.00003639224,0.0001710552,0.00003264946,0.00007458592],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.004347771,"threshold_uncertainty_score":0.7460243,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2078593584","doi":"10.1016/j.jcrysgro.2015.04.009","title":"Structural and optical characterization of low-temperature ALD crystalline AlN","year":2015,"lang":"en","type":"article","venue":"Journal of Crystal Growth","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":83,"is_retracted":false,"has_abstract":false,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"University of Alberta","funders":"","keywords":"Refractive index; X-ray reflectivity; Materials science; Atomic layer deposition; Band gap; Ellipsometry; Sapphire; X-ray photoelectron spectroscopy; Silicon; Thin film; Analytical Chemistry (journal); Optoelectronics; Optics; Chemistry; Nanotechnology; Laser; Chemical engineering","retraction":null,"screen_n_in":null,"score":{"opus":0.01120316160267153,"gpt":0.230442054294554,"spread":0.2192388926918825,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0001823725,0.0001211034,0.0003057008,0.00006129717,0.00002379227,0.00006239218,0.00009825525,0.00004070886,0.00009840072],"category_scores_gemma":[0.00001258175,0.00009025296,0.00007193899,0.00006086808,0.00004766629,0.0003296179,0.00002967226,0.000128529,5.588942e-7],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.00001145504,"about_ca_system_score_gemma":0.0000816504,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.00001079121,"about_ca_topic_score_gemma":3.777147e-7,"domain_scores_codex":[0.9991159,0.0000357257,0.000427343,0.00008589205,0.000208131,0.0001270355],"domain_scores_gemma":[0.9990156,0.00001820744,0.0003926888,0.00007023722,0.0003388844,0.0001644315],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.00009559414,0.00003174461,0.003472757,0.00004770422,0.0000474799,0.00000535232,0.0002339763,0.000008696354,0.9937745,0.002106589,0.00008603597,0.00008959421],"study_design_scores_gemma":[0.004062129,0.0008554648,0.02778309,0.00032101,0.0001754857,0.0001415119,0.001079404,0.0001364593,0.9577511,0.006105519,0.00113192,0.0004568924],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9991449,0.00003974129,0.0001383078,0.0001396872,0.0002534482,0.00006382212,0.00005911527,0.000003514187,0.00015749],"genre_scores_gemma":[0.9989412,0.000003994074,0.0002783521,0.00003496766,0.000646223,5.212427e-7,0.00003487296,0.0000125528,0.00004724592],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.03602337,"threshold_uncertainty_score":0.3680409,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2411413915","doi":"10.1021/acs.nanolett.5b02634","title":"Si Donor Incorporation in GaN Nanowires","year":2015,"lang":"en","type":"article","venue":"Nano Letters","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":82,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"Optina Diagnostics (Canada)","funders":"","keywords":"Nanowire; Materials science; Nanotechnology; Gallium nitride; Optoelectronics; Layer (electronics)","retraction":null,"screen_n_in":null,"score":{"opus":0.0213289930504161,"gpt":0.2410703538166379,"spread":0.2197413607662218,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0001450823,0.0001016326,0.000132364,0.0000614223,0.00002363863,0.00005468429,0.00009897026,0.00002525814,0.0001193103],"category_scores_gemma":[0.000003409105,0.00009316708,0.00003304984,0.00009582096,0.00002043965,0.0001683471,0.00001583601,0.0000417136,0.00009988554],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.00003233875,"about_ca_system_score_gemma":0.00004213767,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.001132559,"about_ca_topic_score_gemma":0.00004308486,"domain_scores_codex":[0.9993533,0.0000430616,0.0001769891,0.0001565087,0.0001008923,0.000169189],"domain_scores_gemma":[0.9996765,0.00001386384,0.00008079309,0.000141659,0.00002359979,0.00006354083],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.00001253555,0.00003212987,0.05228069,0.000005829139,0.000008221897,0.000002725284,0.0003170773,0.0001067535,0.9379176,0.0008737993,0.007566937,0.0008756749],"study_design_scores_gemma":[0.00349048,0.0001099121,0.01144981,0.00009388036,0.00003493183,0.000001725835,0.001031209,0.00009454598,0.9038774,0.003974255,0.07503863,0.0008032513],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9964708,0.00001189301,0.0001098371,0.001164034,0.0004386373,0.0001214359,0.00001252743,0.00002126162,0.001649535],"genre_scores_gemma":[0.9982772,2.366768e-7,0.0001816911,0.00104635,0.0003095494,0.00001911103,0.00005954337,0.00001247795,0.00009387616],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.0674717,"threshold_uncertainty_score":0.3799243,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2167968347","doi":"10.1088/0957-4484/23/19/194012","title":"Temperature-dependent nonradiative recombination processes in GaN-based nanowire white-light-emitting diodes on silicon","year":2012,"lang":"en","type":"article","venue":"Nanotechnology","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":82,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"McGill University","funders":"","keywords":"Materials science; Auger effect; Optoelectronics; Diode; Nanowire; Heterojunction; Light-emitting diode; Silicon; Atmospheric temperature range; Spontaneous emission; Indium gallium nitride; Wide-bandgap semiconductor; Gallium nitride; Layer (electronics); Auger; Optics; Nanotechnology; Atomic physics; Physics","retraction":null,"screen_n_in":null,"score":{"opus":0.01103328032922117,"gpt":0.2461920361724333,"spread":0.2351587558432121,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0002794557,0.0002617329,0.0003419377,0.0002821536,0.0001112413,0.00004450052,0.000229007,0.0002885372,0.0002253003],"category_scores_gemma":[0.00007607443,0.0002351405,0.00006682756,0.0003860092,0.00004357379,0.0002119841,0.00002216524,0.0003236734,0.00007047169],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.00009191328,"about_ca_system_score_gemma":0.0001039377,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.00008419359,"about_ca_topic_score_gemma":0.0000329717,"domain_scores_codex":[0.9985514,0.00008279755,0.000344949,0.0003599523,0.0001477433,0.0005131783],"domain_scores_gemma":[0.9992302,0.0001089732,0.0002208037,0.0002860329,0.00009266726,0.0000613006],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.00005976961,0.0007463848,0.1142029,0.0001305639,0.00004908851,0.000003452698,0.0008851594,0.0001344975,0.8714367,0.004095607,0.0001632152,0.008092729],"study_design_scores_gemma":[0.0008453929,0.0001261993,0.001033662,0.0001116524,0.00001749049,8.730448e-7,0.0005700553,0.00002641344,0.9947826,0.0005803636,0.001625135,0.0002802169],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9967688,0.0001773535,0.00002675276,0.0009855255,0.0005028606,0.000367287,0.00003806652,0.0001217363,0.001011615],"genre_scores_gemma":[0.9991754,0.000004098289,0.0000987026,0.0001715437,0.0001782248,0.0001458119,0.00007059565,0.00003416604,0.0001214117],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.1233459,"threshold_uncertainty_score":0.958875,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2039717835","doi":"10.1088/0957-4484/20/34/345203","title":"Molecular beam epitaxial growth and characterization of non-tapered InN nanowires on Si(111)","year":2009,"lang":"en","type":"article","venue":"Nanotechnology","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":81,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"McGill University","funders":"University of Michigan","keywords":"Materials science; Nanowire; Molecular beam epitaxy; Epitaxy; Characterization (materials science); Stacking; Optoelectronics; Stacking fault; Homogeneous; Spectroscopy; Range (aeronautics); Layer (electronics); Crystallography; Nanotechnology; Dislocation; Nuclear magnetic resonance; Composite material","retraction":null,"screen_n_in":null,"score":{"opus":0.005173490717023066,"gpt":0.2156824469283109,"spread":0.2105089562112879,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0000465062,0.0001422978,0.0002560057,0.0001245119,0.00004184741,0.00001468343,0.0001302174,0.0001355902,0.00004907584],"category_scores_gemma":[0.00000916768,0.0001334008,0.00004196364,0.000123817,0.00006378701,0.00006096505,0.00002848265,0.00009625946,0.000007351259],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.000006204122,"about_ca_system_score_gemma":0.00002064443,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.00004432603,"about_ca_topic_score_gemma":3.444722e-7,"domain_scores_codex":[0.9992706,0.00001747377,0.0002197303,0.0002300832,0.00007578776,0.0001863853],"domain_scores_gemma":[0.999566,0.00001533757,0.0001490373,0.000200322,0.00004005765,0.00002925629],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.000026401,0.00007037168,0.0005353933,0.000009500122,0.00001614485,0.000001680966,0.00003794285,9.807857e-7,0.9780598,0.01184755,0.00000998206,0.009384208],"study_design_scores_gemma":[0.0003726535,0.0003532729,0.001885467,0.0000305708,0.00001427542,9.092025e-7,0.00002178048,0.00001717992,0.9939815,0.00267835,0.0005170934,0.0001269888],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.998059,0.00001432033,0.0003153011,0.0009759168,0.0001336552,0.0001766914,0.00004680811,0.0000458586,0.0002324172],"genre_scores_gemma":[0.9993789,0.000009289563,0.00009303963,0.0003792037,0.00004788168,0.00001009207,0.0000577047,0.00001207186,0.0000118401],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.01592161,"threshold_uncertainty_score":0.5439927,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2131926178","doi":"10.1109/jstqe.2010.2082505","title":"InN p-i-n Nanowire Solar Cells on Si","year":2010,"lang":"en","type":"article","venue":"IEEE Journal of Selected Topics in Quantum Electronics","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":75,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":true,"ca_fund":true,"ca_venue":false,"about_ca":false},"ca_institutions":"McGill University","funders":"McGill University","keywords":"Homojunction; Nanowire; Materials science; Passivation; Optoelectronics; Molecular beam epitaxy; Epitaxy; Doping; Photovoltaics; Solar cell; Energy conversion efficiency; Nanotechnology; Layer (electronics); Photovoltaic system","retraction":null,"screen_n_in":null,"score":{"opus":0.008851956075785494,"gpt":0.2423321935886398,"spread":0.2334802375128543,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0004168316,0.0002465147,0.0004344288,0.000236998,0.00008103056,0.00008350245,0.0003955831,0.0001315145,0.0002289126],"category_scores_gemma":[0.00002964006,0.0002170549,0.0001335237,0.0004099362,0.00003671148,0.0001781663,0.00001516826,0.00141194,0.00001849909],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.00007314712,"about_ca_system_score_gemma":0.0005127969,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.00004786387,"about_ca_topic_score_gemma":0.00006686983,"domain_scores_codex":[0.9981627,0.00008783467,0.0006938106,0.0002065749,0.0002938361,0.0005552289],"domain_scores_gemma":[0.9986016,0.00009436295,0.0005073939,0.0002547804,0.0004239082,0.0001179174],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.00006996522,0.0002763562,0.00183847,0.00001392913,0.00007178691,0.00001415502,0.0001331758,0.0001378001,0.9835989,0.008490816,0.001991189,0.003363437],"study_design_scores_gemma":[0.001153703,0.0006660898,0.0005580216,0.00006537884,0.00004088133,0.00001973416,0.0000513935,0.0005791626,0.9075123,0.007252967,0.08177002,0.0003303316],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9965042,0.0001017894,0.0001209011,0.0004691311,0.002229267,0.0001299295,0.00001088553,0.00001419874,0.0004196533],"genre_scores_gemma":[0.9980258,0.00008882899,0.0002373042,0.0003330072,0.001157129,0.00000351229,0.000006517363,0.00003496818,0.0001129788],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.07977883,"threshold_uncertainty_score":0.8851243,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2511134212","doi":"10.1063/1.4961680","title":"Molecular beam epitaxy growth of Al-rich AlGaN nanowires for deep ultraviolet optoelectronics","year":2016,"lang":"en","type":"article","venue":"APL Materials","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":75,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"McMaster University; McGill University","funders":"","keywords":"Molecular beam epitaxy; Materials science; Nanowire; Optoelectronics; Ultraviolet; Light-emitting diode; Epitaxy; Substrate (aquarium); Ternary operation; Wavelength; Wide-bandgap semiconductor; Nanotechnology; Layer (electronics)","retraction":null,"screen_n_in":null,"score":{"opus":0.006945448756264798,"gpt":0.2340234349597032,"spread":0.2270779862034384,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0003011765,0.0002613805,0.0005046847,0.00005796623,0.00006219248,0.00005890107,0.0002971832,0.00007146536,0.0009022532],"category_scores_gemma":[0.00002540506,0.0001877255,0.000123281,0.00006474427,0.00006135459,0.0001383582,0.00004759026,0.00002563165,0.00003623812],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.00002154003,"about_ca_system_score_gemma":0.0000630484,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.0002602432,"about_ca_topic_score_gemma":0.000002163886,"domain_scores_codex":[0.9984448,0.00006894953,0.0005218656,0.0003434521,0.0001422434,0.0004787132],"domain_scores_gemma":[0.9989825,0.0001170517,0.0003172394,0.0003410531,0.0001605506,0.00008162882],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.00005266984,0.00006603041,0.0004460313,0.00006283734,0.0001017654,5.780445e-7,0.00004397293,6.636138e-7,0.9685229,0.02962456,0.0005582013,0.0005197615],"study_design_scores_gemma":[0.0008557499,0.0001541723,0.0002449582,0.00006706919,0.00006688673,7.931014e-7,0.00003370277,5.151051e-7,0.9814633,0.01512764,0.00172714,0.000258106],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9950702,0.00007422239,0.002495069,0.0002513812,0.000549299,0.0005192193,0.0008472835,0.000036574,0.000156807],"genre_scores_gemma":[0.998587,0.00001511371,0.0005758175,0.0001611066,0.0002257053,0.0001513231,0.0001486385,0.00005625168,0.00007907226],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.01449692,"threshold_uncertainty_score":0.987904,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2554328459","doi":"10.1063/1.4967837","title":"Sub-milliwatt AlGaN nanowire tunnel junction deep ultraviolet light emitting diodes on silicon operating at 242 nm","year":2016,"lang":"en","type":"article","venue":"Applied Physics Letters","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":74,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"McGill University","funders":"Research, Development and Engineering Command","keywords":"Light-emitting diode; Optoelectronics; Materials science; Nanowire; Ultraviolet; Molecular beam epitaxy; Diode; Silicon; Substrate (aquarium); Wide-bandgap semiconductor; Tunnel junction; Quantum efficiency; Epitaxy; Nanotechnology; Quantum tunnelling; Layer (electronics)","retraction":null,"screen_n_in":null,"score":{"opus":0.009258433661151096,"gpt":0.206575731537595,"spread":0.1973172978764439,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.0001541981,0.0004404291,0.0004027512,0.00003403327,0.0003913418,0.0001206836,0.0002437576,0.0000724644,0.000150447],"category_scores_gemma":[0.000003262625,0.0003314486,0.0001700386,0.0001246912,0.00006795365,0.0001908027,0.00007725979,0.0001561636,0.0003567982],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.00009966966,"about_ca_system_score_gemma":0.0000197561,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.00008783031,"about_ca_topic_score_gemma":0.000004649344,"domain_scores_codex":[0.9980549,0.00005200209,0.0004085036,0.0006460046,0.000259076,0.0005794882],"domain_scores_gemma":[0.9989685,0.0001290818,0.0002647007,0.0004669258,0.00004089086,0.0001298472],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.00002119383,0.00006647625,0.003395237,0.0000216166,0.000068812,0.000001163057,0.0003387711,0.0001828521,0.9747458,0.003737423,0.0009402519,0.0164804],"study_design_scores_gemma":[0.0009006833,0.00003020012,0.00109982,0.00009570795,0.0000511713,4.40203e-7,0.0001657379,0.00002239283,0.9950624,0.0002756182,0.001786378,0.0005094561],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9952208,0.000009917409,0.001583894,0.0006108733,0.0004917778,0.0003697654,0.00005300303,0.00009291286,0.001566992],"genre_scores_gemma":[0.9960707,0.000002901687,0.0001081816,0.001961168,0.001393286,0.0001217248,0.0001637645,0.00008591142,0.00009239851],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.02031659,"threshold_uncertainty_score":0.9999138,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2594236174","doi":"10.1038/srep42973","title":"High Operating Temperature and Low Power Consumption Boron Nitride Nanosheets Based Broadband UV Photodetector","year":2017,"lang":"en","type":"article","venue":"Scientific Reports","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":73,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":false,"ca_fund":true,"ca_venue":false,"about_ca":false},"ca_institutions":"","funders":"Army Research Office; Institute of Population and Public Health; King Saud University; U.S. Department of Defense","keywords":"Broadband; Photodetector; Boron nitride; Power consumption; Materials science; Optoelectronics; Boron; Ultraviolet; Power (physics); Telecommunications; Nanotechnology; Computer science; Chemistry; Physics","retraction":null,"screen_n_in":null,"score":{"opus":0.01064956309157025,"gpt":0.2447947302814807,"spread":0.2341451671899104,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":["scholarly_communication","insufficient_payload"],"consensus_categories":[],"category_scores_codex":[0.000659356,0.0002118281,0.0002645472,0.00006525194,0.001249738,0.002244095,0.0001544057,0.00007146466,0.001238811],"category_scores_gemma":[0.00004136781,0.0001787354,0.00007215418,0.00004286972,0.0002131366,0.0003983012,0.00007132606,0.0001168259,0.00001857809],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.00001788626,"about_ca_system_score_gemma":0.0001271637,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.0004497512,"about_ca_topic_score_gemma":0.00001938899,"domain_scores_codex":[0.9983072,0.00004126615,0.0003849722,0.000700801,0.0002579799,0.0003078331],"domain_scores_gemma":[0.9982537,0.00002190809,0.0004585409,0.0009782106,0.0001448836,0.0001427795],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.000007000947,0.0000360898,0.03205033,0.00003515235,0.00001646817,0.00003753473,0.00007867821,0.00002153557,0.9655563,0.00003491019,0.001848798,0.0002771501],"study_design_scores_gemma":[0.0004518412,0.00002230098,0.01228673,0.0001412493,0.0000264696,0.00001167907,0.00004625678,0.00008162419,0.9839298,0.0004482229,0.002276322,0.0002774861],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9929133,0.00006698153,0.00001064641,0.00005533834,0.006203977,0.0003443602,0.00004809097,0.00003485988,0.0003224584],"genre_scores_gemma":[0.9984536,7.789224e-7,0.0002174137,0.00003708639,0.0001692778,0.00002583132,0.0001259253,0.00002109121,0.0009490033],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.0197636,"threshold_uncertainty_score":0.9996742,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2070761578","doi":"10.1063/1.3674984","title":"Structure and chemistry of the Si(111)/AlN interface","year":2012,"lang":"en","type":"article","venue":"Applied Physics Letters","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":73,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"McMaster University; Brockhouse Institute for Materials Research","funders":"Engineering and Physical Sciences Research Council","keywords":"Epitaxy; Amorphous solid; Materials science; Crystallography; Chemical physics; Chemistry; Nanotechnology; Layer (electronics)","retraction":null,"screen_n_in":null,"score":{"opus":0.006935047139650195,"gpt":0.2087907648332209,"spread":0.2018557176935707,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00003850935,0.0001432859,0.0001632051,0.000004316558,0.00005261926,0.00002124062,0.000156573,0.00002590257,0.0001755506],"category_scores_gemma":[4.397092e-7,0.0001049392,0.00005036723,0.00005855059,0.00008520777,0.00006536433,0.0000859504,0.0001128911,0.000004491246],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.000007433244,"about_ca_system_score_gemma":0.000008646108,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.00003589397,"about_ca_topic_score_gemma":1.101937e-7,"domain_scores_codex":[0.9994226,0.00001093405,0.0001332861,0.0001309642,0.00009353359,0.0002087297],"domain_scores_gemma":[0.9995301,0.00002372246,0.0001324585,0.0002550193,0.00001065008,0.00004803262],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.00000507161,0.00002012207,0.004952374,0.0000362088,0.00004008469,1.305331e-8,0.0003671255,0.00004130904,0.990343,0.003016321,0.0005248158,0.0006535219],"study_design_scores_gemma":[0.0002007491,0.000001789755,0.001153502,0.0000108855,0.00003381289,2.170238e-7,0.0001399508,0.000002882289,0.9966393,0.0005591116,0.001133253,0.0001245801],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9981281,0.00002161886,0.0002055835,0.000114385,0.0001668483,0.0001221718,0.0000678565,0.000009469027,0.00116403],"genre_scores_gemma":[0.9989694,2.949585e-7,0.00008540518,0.0003513148,0.0005301064,0.000007651487,0.00001617122,0.00001752881,0.00002211158],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.006296233,"threshold_uncertainty_score":0.4279297,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2072969029","doi":"10.1063/1.1846143","title":"Blue-violet InGaN laser diodes grown on bulk GaN substrates by plasma-assisted molecular-beam epitaxy","year":2004,"lang":"en","type":"article","venue":"Applied Physics Letters","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":70,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"Institute for Microstructural Sciences","funders":"","keywords":"Molecular beam epitaxy; Materials science; Optoelectronics; Diode; Laser; Epitaxy; Plasma; Optics; Layer (electronics); Nanotechnology","retraction":null,"screen_n_in":null,"score":{"opus":0.009476649984603115,"gpt":0.2121253138620354,"spread":0.2026486638774323,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.00009222128,0.0004954389,0.0004452723,0.00004726068,0.0001837602,0.0001961495,0.0003471711,0.00007704218,0.00008714497],"category_scores_gemma":[0.000001270404,0.0004824284,0.000184294,0.0002007347,0.0001217208,0.0001313876,0.00004192069,0.0002853428,0.0002279434],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.00005964437,"about_ca_system_score_gemma":0.00004232184,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.0002884995,"about_ca_topic_score_gemma":0.000002389798,"domain_scores_codex":[0.9980974,0.00003078727,0.0003671574,0.0006026388,0.0002970699,0.0006049616],"domain_scores_gemma":[0.9990031,0.00006391741,0.0002378303,0.0004957706,0.0000314616,0.0001679718],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.0000369726,0.0002719471,0.00016802,0.00002451738,0.0001613074,0.000005967856,0.0002276838,0.005352575,0.9779544,0.01339643,0.001554897,0.0008453075],"study_design_scores_gemma":[0.001382585,0.00004524185,0.0001558028,0.00004437894,0.00007130329,5.149399e-7,0.0001610473,0.000004718092,0.9948338,0.001791638,0.0009516357,0.0005573912],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9962071,0.000007916792,0.0007444978,0.0005105961,0.0002129123,0.0003772902,0.0002270406,0.0001105776,0.001602082],"genre_scores_gemma":[0.9957199,0.000001131479,0.000154939,0.002724897,0.000429236,0.0001203699,0.000738879,0.00009190238,0.00001879653],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.01687936,"threshold_uncertainty_score":0.9997627,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2097929344","doi":"10.1109/ted.2006.885663","title":"At-Bias Extraction of Access Parasitic Resistances in AlGaN/GaN HEMTs: Impact on Device Linearity and Channel Electron Velocity","year":2006,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":70,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"Simon Fraser University","funders":"","keywords":"Linearity; Biasing; Transistor; Channel (broadcasting); Physics; Topology (electrical circuits); Optoelectronics; Materials science; Analytical Chemistry (journal); Electrical engineering; Computer science; Chemistry; Voltage; Telecommunications; Engineering; Quantum mechanics","retraction":null,"screen_n_in":null,"score":{"opus":0.02489137047776839,"gpt":0.3110855892601783,"spread":0.2861942187824099,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.0002906383,0.0003697598,0.0004814582,0.0002515338,0.000215645,0.0001108072,0.0002052479,0.0001174749,0.0001611817],"category_scores_gemma":[0.000001736159,0.0003337539,0.0001525454,0.0003910331,0.00006408013,0.0004645709,0.000001612418,0.0003474373,0.00001089321],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.0001993276,"about_ca_system_score_gemma":0.0001081044,"about_ca_topic_candidate":true,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.007729977,"about_ca_topic_score_gemma":0.005786173,"domain_scores_codex":[0.9980049,0.0001562537,0.0005282729,0.0004942904,0.0002624107,0.000553917],"domain_scores_gemma":[0.9990098,0.0002288659,0.0003298332,0.000261791,0.0000816606,0.00008804008],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.003278294,0.003734088,0.04330844,0.0006164596,0.0005702206,0.00001247414,0.0005324616,0.03558266,0.9056539,0.0008682265,0.0002953901,0.005547367],"study_design_scores_gemma":[0.0007152685,0.0004429735,0.047147,0.0001131911,0.00009041345,0.00000332456,0.00005803415,0.000525747,0.9496393,0.0007372709,0.0001736138,0.0003539096],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9972197,0.0002411682,0.001095074,0.000102233,0.0001747531,0.0003763712,0.000110563,0.00004833083,0.000631775],"genre_scores_gemma":[0.9994496,0.00004313185,0.000028696,0.00005699847,0.0001373284,0.00006343272,0.00004490489,0.00003488822,0.0001410253],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.04398533,"threshold_uncertainty_score":0.9999114,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W1975290782","doi":"10.1063/1.2345226","title":"Ga N ∕ Al Ga N ultraviolet/infrared dual-band detector","year":2006,"lang":"en","type":"article","venue":"Applied Physics Letters","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":69,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"Institute for Microstructural Sciences","funders":"","keywords":"Infrared; Ultraviolet; Optoelectronics; Materials science; Band gap; Heterojunction; Wide-bandgap semiconductor; Absorption (acoustics); Detector; Optics; Physics","retraction":null,"screen_n_in":null,"score":{"opus":0.007466711895895183,"gpt":0.2068899686212892,"spread":0.199423256725394,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.00008019318,0.0003621405,0.0003615177,0.00003723107,0.0001575313,0.0001480857,0.0002030081,0.00004702527,0.0004004035],"category_scores_gemma":[5.18215e-7,0.0003585944,0.0001618209,0.000153087,0.00008760003,0.0001212055,0.00003152043,0.0001833188,0.0002419565],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.00002315867,"about_ca_system_score_gemma":0.00002999636,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.0004512706,"about_ca_topic_score_gemma":0.000002768242,"domain_scores_codex":[0.998392,0.00002730414,0.0003424877,0.0004670841,0.0002364096,0.0005346682],"domain_scores_gemma":[0.9991834,0.00006124951,0.0001967105,0.0004342159,0.00002989227,0.00009455837],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.00001960573,0.00008928916,0.001617431,0.00001482498,0.00005512699,0.000002686171,0.00007160521,0.0003097584,0.9734177,0.007728423,0.0159863,0.0006872622],"study_design_scores_gemma":[0.001243574,0.00001788844,0.002231569,0.00001959901,0.00007402094,7.800464e-7,0.00008374892,0.00001191954,0.9701063,0.004599183,0.02096838,0.0006430477],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9863327,0.0000112951,0.001584838,0.0002184649,0.0003415583,0.0003405059,0.0001556571,0.00009965363,0.01091529],"genre_scores_gemma":[0.9949908,5.428383e-7,0.0002844235,0.002249411,0.00176283,0.0001019028,0.0003820433,0.00006707195,0.0001609232],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.01075437,"threshold_uncertainty_score":0.9998866,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null}]}