{"meta":{"page":1,"per_page":50,"max_per_page":100,"total":862,"total_is_capped":false,"direct_labels_cover":0,"predictions_cover":862,"direct_label_status":"direct model label, unvalidated","prediction_status":"machine_predicted_unvalidated (Codex and Gemma teacher distillation)","score_status":"score_only:v0-immature-baseline (scores rank; they never assert a category)","snapshot":{"source":"OpenAlex, pinned release, all 482 partitions","release":"2026-06-24","frame_built":"2026-07-12","author_layer_release":"2026-06-26"},"query_hash":"73b5fc318297","filters":{"topic":"GaN-based semiconductor devices and materials"}},"results":[{"id":"W2059494118","doi":"10.1038/nnano.2014.308","title":"Ultralow-threshold electrically injected AlGaN nanowire ultraviolet lasers on Si operating at low temperature","year":2015,"lang":"en","type":"article","venue":"Nature Nanotechnology","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":296,"is_retracted":false,"has_abstract":false,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"McGill University","funders":"","keywords":"Ultraviolet; Materials science; Laser; Optoelectronics; Substrate (aquarium); Semiconductor; Nanowire; Radiation; Optics; Physics","authors":[{"name":"Kwai Hei Li","is_ca":true},{"name":"Xiao Liu","is_ca":true},{"name":"Qi Wang","is_ca":true},{"name":"Songrui Zhao","is_ca":true},{"name":"Zetian Mi","is_ca":true}],"retraction":null,"screen_n_in":null,"score":{"opus":0.007225035245697017,"gpt":0.2377259315798349,"spread":0.2305008963341379,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"metacan-v3-hybrid-931329e0061c","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0001904571,0.0002484728,0.0003438734,0.000186367,0.0003191753,0.0005831745,0.0007026597,0.0003096056,0.002590226],"category_scores_gemma":[0.000328202,0.0002243714,0.0002130693,0.0002039093,0.000458505,0.0006314083,0.0004111841,0.000400659,0.0006077543],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.001004623,"about_ca_system_score_gemma":0.0004491917,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.002141073,"about_ca_topic_score_gemma":0.006897731,"domain_scores_codex":[0.9998267,0.00001220407,0.000008494999,0.00003281694,0.00007687628,0.00004290431],"domain_scores_gemma":[0.9996761,0.0001323287,0.00006237291,0.00004298355,0.00006150876,0.00002479147],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.0003263868,0.00004534144,0.0008590537,0.00007282084,0.00001455146,0.0001121042,0.0001551665,0.001092442,0.9935004,0.00132854,0.0002323736,0.002260746],"study_design_scores_gemma":[0.00005445667,0.00035738,0.00637248,0.00002705872,0.00002809594,0.0001108743,0.0001105393,0.01776321,0.9728343,0.000596264,0.001719292,0.00002613141],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9943644,0.0002485288,0.002336931,0.0000730812,0.00003157159,0.000008825761,0.00009072778,0.0001237536,0.002722205],"genre_scores_gemma":[0.9959152,0.0001245314,0.001141623,0.00001611811,0.0000179901,0.00001000703,0.00007110733,0.00003418545,0.002669115],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.002590226,"threshold_uncertainty_score":0.008665204,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2007128208","doi":"10.1021/nl104536x","title":"p-Type Modulation Doped InGaN/GaN Dot-in-a-Wire White-Light-Emitting Diodes Monolithically Grown on Si(111)","year":2011,"lang":"en","type":"article","venue":"Nano Letters","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":277,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"McMaster University; McGill University","funders":"","keywords":"Materials science; Optoelectronics; Quantum dot; Light-emitting diode; Molecular beam epitaxy; Heterojunction; Diode; Doping; Nanowire; Epitaxy; Phosphor; Modulation (music); Nanotechnology; Layer (electronics); Physics","authors":[{"name":"Hieu Pham Trung Nguyen","is_ca":true},{"name":"S. Zhang","is_ca":true},{"name":"Kai Cui","is_ca":true},{"name":"Xing Han","is_ca":true},{"name":"Saeed Fathololoumi","is_ca":true},{"name":"Martin Couillard","is_ca":true},{"name":"Gianluigi A. Botton","is_ca":true},{"name":"Zetian Mi","is_ca":true}],"retraction":null,"screen_n_in":null,"score":{"opus":0.02143626579396243,"gpt":0.2310009847611126,"spread":0.2095647189671502,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"metacan-v3-hybrid-931329e0061c","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00004410146,0.0001730872,0.0001369129,0.00008320045,0.00008998842,0.0002287833,0.0002267855,0.0001054438,0.0007104486],"category_scores_gemma":[0.00006624239,0.0001420453,0.0001079591,0.00008999914,0.00009174614,0.0002063782,0.0001104686,0.0001583325,0.0002358062],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.000202057,"about_ca_system_score_gemma":0.0000963069,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.0006422419,"about_ca_topic_score_gemma":0.002237851,"domain_scores_codex":[0.9999524,0.000003717226,0.000002371454,0.00001482683,0.00001602368,0.00001070639],"domain_scores_gemma":[0.9999585,0.000007167534,0.00001123528,0.00000651967,0.000009657932,0.000006951798],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.00001405308,0.000005593926,0.0001809131,0.00001216247,0.000003386849,0.00001694465,0.000006911208,0.0001026364,0.998865,0.0001138079,0.00002759079,0.0006511196],"study_design_scores_gemma":[0.000003849366,0.0000338417,0.001289039,0.000001320147,0.000008699337,0.00004994949,0.000006496379,0.002365341,0.9955409,0.00002638871,0.0006723002,0.000002011659],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9946238,0.0001367297,0.003226478,0.00001306616,0.00001031258,0.00000913718,0.0001056254,0.00007511221,0.001799728],"genre_scores_gemma":[0.9921494,0.0001657267,0.005059138,0.00000907998,0.000003414976,0.0000101119,0.0001393758,0.00002255953,0.002441319],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.0007104486,"threshold_uncertainty_score":0.002376735,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2113992013","doi":"10.1021/nl051860m","title":"Diameter-Dependent Electromechanical Properties of GaN Nanowires","year":2006,"lang":"en","type":"article","venue":"Nano Letters","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":270,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"National Institute for Nanotechnology; University of Alberta","funders":"","keywords":"Nanowire; Nanoelectromechanical systems; Resonator; Materials science; Transmission electron microscopy; Resonance (particle physics); Q factor; Modulus; Scanning electron microscope; Optoelectronics; Condensed matter physics; Nanotechnology; Composite material; Nanoparticle; Atomic physics; Physics","authors":[{"name":"Chang‐Yong Nam","is_ca":true},{"name":"Papot Jaroenapibal","is_ca":true},{"name":"Douglas Tham","is_ca":true},{"name":"David E. Luzzi","is_ca":true},{"name":"Stéphane Evoy","is_ca":true},{"name":"J. E. Fischer","is_ca":true}],"retraction":null,"screen_n_in":null,"score":{"opus":0.01108927354221126,"gpt":0.2048012102255955,"spread":0.1937119366833843,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"metacan-v3-hybrid-931329e0061c","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0002217056,0.0002039307,0.0001213147,0.0001276723,0.00008730405,0.0002098693,0.0001164053,0.0001411962,0.0004963166],"category_scores_gemma":[0.0005845886,0.0002057864,0.00008219688,0.0001085043,0.0001375027,0.0001840171,0.0001098474,0.0001456487,0.0001290919],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.000158182,"about_ca_system_score_gemma":0.00004764038,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.0003002151,"about_ca_topic_score_gemma":0.0003894319,"domain_scores_codex":[0.9998702,0.00001659127,0.000007778218,0.00003511668,0.00005385238,0.00001647885],"domain_scores_gemma":[0.9995614,0.0001704556,0.0001136858,0.00002843603,0.0001005802,0.00002547069],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.00002378821,0.000003700032,0.0006157371,0.00001103826,0.000001996046,0.00002619397,0.00001733075,0.0001693562,0.9984285,0.00004632273,0.00001343835,0.0006425843],"study_design_scores_gemma":[0.000009803007,0.000143143,0.01808471,0.000004880474,0.000007533448,0.000143455,0.00003533324,0.005263297,0.9756762,0.00008854028,0.0005286661,0.00001443917],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9974256,0.000175807,0.001503697,0.00002622935,0.000005468055,0.000003698174,0.0001071764,0.00001119148,0.0007411551],"genre_scores_gemma":[0.9981139,0.0001362452,0.0009865094,0.0000120006,0.000004290715,0.00000633298,0.0001090113,0.000008849862,0.0006228717],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.0004963166,"threshold_uncertainty_score":0.001660407,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2077277084","doi":"10.1038/srep08332","title":"Aluminum nitride nanowire light emitting diodes: Breaking the fundamental bottleneck of deep ultraviolet light sources","year":2015,"lang":"en","type":"article","venue":"Scientific Reports","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":223,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":true,"ca_fund":true,"ca_venue":false,"about_ca":false},"ca_institutions":"McGill University","funders":"Army Research Office; Natural Sciences and Engineering Research Council of Canada; McGill University","keywords":"Nanowire; Materials science; Optoelectronics; Light-emitting diode; Gallium nitride; Diode; Quantum efficiency; Ultraviolet; Nitride; Substrate (aquarium); Doping; Wide-bandgap semiconductor; Nanotechnology; Layer (electronics)","authors":[{"name":"Songrui Zhao","is_ca":true},{"name":"Ashfiqua T. Connie","is_ca":true},{"name":"Hadi Tavakoli Dastjerdi","is_ca":true},{"name":"Xianghua Kong","is_ca":true},{"name":"Qi Wang","is_ca":true},{"name":"Mehrdad Djavid","is_ca":true},{"name":"Sharif Sadaf","is_ca":true},{"name":"X. D. Liu","is_ca":true},{"name":"I. Shih","is_ca":true},{"name":"Hong Guo","is_ca":true},{"name":"Zetian Mi","is_ca":true}],"retraction":null,"screen_n_in":null,"score":{"opus":0.01494331707588222,"gpt":0.2418803725346661,"spread":0.2269370554587839,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"metacan-v3-hybrid-931329e0061c","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000234989,0.0002265983,0.0001726,0.0001142443,0.0001558327,0.0005545964,0.0002716812,0.0003194276,0.0009523596],"category_scores_gemma":[0.0001895335,0.0001401585,0.00009049915,0.0001021937,0.0002153113,0.0009771,0.0002905501,0.0004913133,0.0004740985],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.0002908455,"about_ca_system_score_gemma":0.0002551305,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.0002550237,"about_ca_topic_score_gemma":0.0005160182,"domain_scores_codex":[0.9999336,0.000007925721,0.000002372631,0.00001502299,0.00002705954,0.0000140405],"domain_scores_gemma":[0.9999435,0.00001193023,0.00001028017,0.000006641455,0.00001600124,0.00001170848],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.0001057774,0.00003245222,0.000646514,0.0002289361,0.000008006255,0.00007445976,0.00007755744,0.0005275792,0.9434922,0.01269217,0.0008037648,0.04131068],"study_design_scores_gemma":[0.0000262167,0.000264107,0.001539091,0.00004761668,0.00001599694,0.0002553965,0.00006676587,0.008769575,0.9437056,0.006556051,0.03873725,0.00001633567],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.8422291,0.05126083,0.07112582,0.002518214,0.0003148481,0.00005845321,0.0002219867,0.0007118075,0.03155888],"genre_scores_gemma":[0.9384027,0.0205662,0.02954602,0.0003114014,0.0001474404,0.00004561526,0.0001692809,0.0001042025,0.01070713],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.0009523596,"threshold_uncertainty_score":0.003185987,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2465138693","doi":"10.1021/acs.nanolett.6b01929","title":"Full-Color Single Nanowire Pixels for Projection Displays","year":2016,"lang":"en","type":"article","venue":"Nano Letters","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":200,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":true,"ca_fund":true,"ca_venue":false,"about_ca":false},"ca_institutions":"McMaster University; McGill University","funders":"Natural Sciences and Engineering Research Council of Canada; Samsung","keywords":"Nanowire; Materials science; Light-emitting diode; Optoelectronics; Quantum dot; Photoluminescence; Diode; Indium gallium nitride; Indium; Biasing; Light emission; Substrate (aquarium); Gallium nitride; Nanotechnology; Voltage; Layer (electronics)","authors":[{"name":"Yong‐Ho Ra","is_ca":true},{"name":"Renjie Wang","is_ca":true},{"name":"Steffi Y. Woo","is_ca":true},{"name":"Mehrdad Djavid","is_ca":true},{"name":"Sharif Sadaf","is_ca":true},{"name":"Jaesoong Lee","is_ca":false},{"name":"Gianluigi A. Botton","is_ca":true},{"name":"Zetian Mi","is_ca":true}],"retraction":null,"screen_n_in":null,"score":{"opus":0.01671062353715645,"gpt":0.2391128624941971,"spread":0.2224022389570407,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"metacan-v3-hybrid-931329e0061c","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00008098,0.0003064998,0.0002418336,0.0001270207,0.0001401719,0.0003904073,0.0004029371,0.0002174534,0.008072633],"category_scores_gemma":[0.0001367938,0.0001860283,0.000201642,0.0001576201,0.00006515691,0.0004519202,0.0002892055,0.0003122262,0.001707375],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.0001884198,"about_ca_system_score_gemma":0.0001447563,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.0001957245,"about_ca_topic_score_gemma":0.000906847,"domain_scores_codex":[0.9999368,0.000006512935,0.000002250435,0.00001595329,0.0000298252,0.000008644],"domain_scores_gemma":[0.9999311,0.00001248232,0.000006975162,0.00001324143,0.00002487729,0.00001120342],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.0000561958,0.00002970412,0.000340916,0.00005593893,0.00001201147,0.0000655016,0.0000128544,0.0004116754,0.9671855,0.001100032,0.001832973,0.02889677],"study_design_scores_gemma":[0.00001948195,0.0001431025,0.002090879,0.00001171253,0.00002014616,0.0003882523,0.00001940622,0.02665521,0.9520465,0.0008229116,0.0177678,0.00001462514],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.7204921,0.003902943,0.2230535,0.0009622679,0.0004088343,0.000125139,0.001563051,0.005691978,0.04380025],"genre_scores_gemma":[0.8444932,0.001142834,0.1391452,0.0001398742,0.00006614243,0.00005768413,0.0007693461,0.0002438407,0.01394188],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.008072633,"threshold_uncertainty_score":0.02700567,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2072033548","doi":"10.1364/oe.19.025528","title":"Optical performance of top-down fabricated InGaN/GaN nanorod light emitting diode arrays","year":2011,"lang":"en","type":"article","venue":"Optics Express","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":195,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"McGill University","funders":"","keywords":"Nanorod; Materials science; Light-emitting diode; Optoelectronics; Photoluminescence; Diode; Planar; Fabrication; Gallium nitride; Optics; Indium gallium nitride; Quantum-confined Stark effect; Wide-bandgap semiconductor; Plasma etching; Etching (microfabrication); Piezoelectricity; Quantum well; Nanotechnology; Laser; Composite material","authors":[{"name":"Qiming Li","is_ca":false},{"name":"Karl Westlake","is_ca":false},{"name":"Mary H. Crawford","is_ca":false},{"name":"Stephen R. Lee","is_ca":false},{"name":"Daniel Koleske","is_ca":false},{"name":"Jeffery J. Figiel","is_ca":false},{"name":"Karen Charlene Cross","is_ca":false},{"name":"Saeed Fathololoumi","is_ca":true},{"name":"Zetian Mi","is_ca":true},{"name":"George T. Wang","is_ca":false}],"retraction":null,"screen_n_in":null,"score":{"opus":0.01808698360580996,"gpt":0.2238317368954686,"spread":0.2057447532896587,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"metacan-v3-hybrid-931329e0061c","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0001224753,0.0003142411,0.0003306788,0.0001892975,0.000161106,0.000477152,0.0003047414,0.0002982611,0.002144457],"category_scores_gemma":[0.0002533295,0.0002466511,0.0002036059,0.000197601,0.0001208371,0.0002085156,0.0001757912,0.0002547112,0.0005882389],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.0003983931,"about_ca_system_score_gemma":0.0002020755,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.001655829,"about_ca_topic_score_gemma":0.0021493,"domain_scores_codex":[0.9997869,0.00001215744,0.00001221872,0.00005623302,0.00007746529,0.00005490634],"domain_scores_gemma":[0.9996502,0.00007082972,0.00004864574,0.00004026091,0.000139217,0.00005090742],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.00007138085,0.00001817167,0.0003157892,0.00002310248,0.000008332458,0.00002702184,0.00001706893,0.0003961154,0.9974005,0.00002742859,0.00009948344,0.001595711],"study_design_scores_gemma":[0.00001649802,0.0002605556,0.002804256,0.000003693286,0.00001650912,0.00004317664,0.00002010358,0.003996568,0.9922322,0.00001475974,0.0005813577,0.00001030125],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9959506,0.0002012032,0.001442409,0.00004587613,0.00003655464,0.000009549518,0.0003254863,0.0001607579,0.001827574],"genre_scores_gemma":[0.9915649,0.0002666787,0.004801428,0.00005912203,0.00002580585,0.00002117834,0.0003845851,0.0000546102,0.002821723],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.002144457,"threshold_uncertainty_score":0.007173896,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2014708533","doi":"10.1021/nl203860b","title":"Controlling Electron Overflow in Phosphor-Free InGaN/GaN Nanowire White Light-Emitting Diodes","year":2012,"lang":"en","type":"article","venue":"Nano Letters","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":193,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":true,"ca_fund":true,"ca_venue":false,"about_ca":false},"ca_institutions":"McMaster University; Brockhouse Institute for Materials Research; McGill University","funders":"McMaster University; Natural Sciences and Engineering Research Council of Canada; McGill University","keywords":"Optoelectronics; Materials science; Nanowire; Light-emitting diode; Electroluminescence; Diode; Phosphor; Auger effect; Voltage droop; Quantum efficiency; Indium gallium nitride; Wide-bandgap semiconductor; Quantum dot; Gallium nitride; Electron; Layer (electronics); Nanotechnology; Physics; Voltage","authors":[{"name":"Hieu Pham Trung Nguyen","is_ca":true},{"name":"Kai Cui","is_ca":true},{"name":"Shaofei Zhang","is_ca":true},{"name":"Mehrdad Djavid","is_ca":true},{"name":"Andreas Korinek","is_ca":true},{"name":"Gianluigi A. Botton","is_ca":true},{"name":"Zetian Mi","is_ca":true}],"retraction":null,"screen_n_in":null,"score":{"opus":0.007308850078957341,"gpt":0.2195296546747927,"spread":0.2122208045958354,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"metacan-v3-hybrid-931329e0061c","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0001910101,0.0003542043,0.0003934269,0.0001026834,0.0001574058,0.0004700285,0.0004463045,0.0001735696,0.0005202673],"category_scores_gemma":[0.0003283945,0.0002231366,0.0001503212,0.0001304614,0.0002500136,0.0006774112,0.000340435,0.0002458594,0.0001312206],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.0003778637,"about_ca_system_score_gemma":0.0002024363,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.0004236985,"about_ca_topic_score_gemma":0.001066491,"domain_scores_codex":[0.99988,0.00001135731,0.00001296633,0.00002920645,0.00003875648,0.00002772203],"domain_scores_gemma":[0.9998077,0.00006263638,0.00006124478,0.0000191209,0.0000272836,0.00002205731],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.0001232299,0.00002542936,0.0004945968,0.00005166498,0.00001131416,0.00008508446,0.00003925115,0.001092116,0.9955868,0.0001931634,0.00003583893,0.002261642],"study_design_scores_gemma":[0.00001238521,0.00007826964,0.0005924403,0.000003040083,0.00001020298,0.00003638637,0.00001004079,0.004904862,0.9939607,0.00006926672,0.0003172337,0.000005169773],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9963091,0.0002486238,0.002934851,0.00002283306,0.000008899054,0.000008881638,0.00004129674,0.00006038414,0.000365058],"genre_scores_gemma":[0.9968908,0.0002627178,0.002135797,0.00001727061,0.000005502421,0.00001032742,0.00004985972,0.00004574966,0.0005818958],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.0005202673,"threshold_uncertainty_score":0.002741635,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W1977417292","doi":"10.1063/1.1527225","title":"Dislocation effect on light emission efficiency in gallium nitride","year":2002,"lang":"en","type":"article","venue":"Applied Physics Letters","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":189,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":false,"ca_fund":false,"ca_venue":false,"about_ca":true},"ca_institutions":"","funders":"","keywords":"Dislocation; Gallium nitride; Doping; Materials science; Wide-bandgap semiconductor; Condensed matter physics; Diffusion; Gallium; Carrier lifetime; Atomic physics; Optoelectronics; Silicon; Physics; Thermodynamics; Nanotechnology; Metallurgy","authors":[{"name":"S. Yu. Karpov","is_ca":false},{"name":"Yuri Makarov","is_ca":false}],"retraction":null,"screen_n_in":null,"score":{"opus":0.008763691074606672,"gpt":0.2143197287539131,"spread":0.2055560376793064,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"metacan-v3-hybrid-931329e0061c","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0004948933,0.0003880729,0.0002752859,0.0003343503,0.0001742179,0.0005537508,0.0003829775,0.0003957283,0.0004485731],"category_scores_gemma":[0.001894305,0.0002535414,0.0003435366,0.0002176976,0.0005502425,0.0004569192,0.0003087608,0.0003103151,0.0002782001],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.0007130321,"about_ca_system_score_gemma":0.0001625836,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.001816704,"about_ca_topic_score_gemma":0.0009684607,"domain_scores_codex":[0.9997298,0.00006892114,0.00001167654,0.00004880557,0.00008696999,0.00005376852],"domain_scores_gemma":[0.9993629,0.0003323336,0.0000846339,0.00009005186,0.0001075133,0.00002266598],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.0008439559,0.0002050295,0.02346513,0.0001333764,0.00008999801,0.0005130527,0.0002317493,0.08247765,0.8668358,0.005783781,0.0002360032,0.01918444],"study_design_scores_gemma":[0.00006141101,0.0002926691,0.01187094,0.00001519606,0.00005996406,0.0002443354,0.00003317675,0.1891078,0.7962213,0.001323117,0.0007242119,0.0000458981],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9903695,0.0004363543,0.007184711,0.00006410485,0.000007137945,0.000007924438,0.00004658624,0.0001517077,0.001732026],"genre_scores_gemma":[0.9987685,0.0001230992,0.0007661924,0.00000805125,0.000001797029,0.000003563289,0.00002889303,0.0000278159,0.0002720236],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.001816704,"threshold_uncertainty_score":0.005173445,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2056276153","doi":"10.1063/1.1345816","title":"Properties of carbon-doped GaN","year":2001,"lang":"en","type":"article","venue":"Applied Physics Letters","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":149,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"Institute for Microstructural Sciences","funders":"","keywords":"Materials science; Photoluminescence; Doping; Molecular beam epitaxy; Optoelectronics; Carbon fibers; Luminescence; Electrical resistivity and conductivity; Epitaxy; Hall effect; Wide-bandgap semiconductor; Nanotechnology; Composite material; Layer (electronics)","authors":[{"name":"H. Tang","is_ca":true},{"name":"J. B. Webb","is_ca":true},{"name":"J. A. Bardwell","is_ca":true},{"name":"S. Raymond","is_ca":true},{"name":"J. Salzman","is_ca":false},{"name":"C. Uzan-Saguy","is_ca":false}],"retraction":null,"screen_n_in":null,"score":{"opus":0.01735955907463065,"gpt":0.2095211880675154,"spread":0.1921616289928847,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"metacan-v3-hybrid-931329e0061c","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0001060728,0.0001709101,0.0001222193,0.000214042,0.0001501599,0.000327134,0.000164425,0.0002118973,0.001040155],"category_scores_gemma":[0.0003872257,0.00006405378,0.00009721955,0.0001871677,0.0001011782,0.000149875,0.00006096244,0.0001066077,0.0002094952],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.0002914173,"about_ca_system_score_gemma":0.00008741509,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.001743961,"about_ca_topic_score_gemma":0.001458873,"domain_scores_codex":[0.9998865,0.000008766915,0.000005789854,0.0000236802,0.00004885564,0.00002630838],"domain_scores_gemma":[0.999749,0.0000540895,0.0000374457,0.00002015562,0.0001099953,0.00002937317],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.0001454088,0.00001949977,0.002320998,0.00007007967,0.00001306998,0.0001189653,0.00003129157,0.001544618,0.9917243,0.0001717616,0.0001634813,0.003676461],"study_design_scores_gemma":[0.00001225926,0.0002879094,0.02669104,0.00001767835,0.00002915396,0.0004518514,0.0000410167,0.01125693,0.9584137,0.0001031621,0.002672958,0.00002246435],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9956614,0.0006447715,0.0005775661,0.00003454084,0.00001409809,0.000005151635,0.0002981543,0.00003388891,0.002730408],"genre_scores_gemma":[0.9982542,0.0001354763,0.0003200893,0.00001351311,0.000003612743,0.000002805194,0.0003478595,0.0000105885,0.0009117496],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.001743961,"threshold_uncertainty_score":0.00347966,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2014888501","doi":"10.1021/nl4030165","title":"Breaking the Carrier Injection Bottleneck of Phosphor-Free Nanowire White Light-Emitting Diodes","year":2013,"lang":"en","type":"article","venue":"Nano Letters","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":144,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"McGill University","funders":"","keywords":"Light-emitting diode; Phosphor; Optoelectronics; Nanowire; Materials science; Diode; Color rendering index; Solid-state lighting; Optics; Physics","authors":[{"name":"Hieu Pham Trung Nguyen","is_ca":true},{"name":"Shaofei Zhang","is_ca":true},{"name":"Ashfiqua T. Connie","is_ca":true},{"name":"Md Golam Kibria","is_ca":true},{"name":"Qi Wang","is_ca":true},{"name":"I. Shih","is_ca":true},{"name":"Zetian Mi","is_ca":true}],"retraction":null,"screen_n_in":null,"score":{"opus":0.006599193529336638,"gpt":0.2051978778607597,"spread":0.1985986843314231,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"metacan-v3-hybrid-931329e0061c","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000275965,0.0002503478,0.000202567,0.0001520683,0.0001727334,0.0004835236,0.0003865243,0.00021371,0.0006299387],"category_scores_gemma":[0.0003268549,0.000265201,0.0001962326,0.00007890075,0.0002551755,0.0007685624,0.0002626204,0.0004056532,0.0002669944],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.0003670575,"about_ca_system_score_gemma":0.0002384651,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.0004686301,"about_ca_topic_score_gemma":0.0007360055,"domain_scores_codex":[0.9998908,0.00001070671,0.000009148439,0.00002329821,0.00004304169,0.00002298056],"domain_scores_gemma":[0.9998496,0.00004239042,0.00003552129,0.00002152582,0.00003651781,0.00001446824],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.00002939401,0.0000169676,0.000252142,0.00003366535,0.000005414148,0.00004875164,0.00003420193,0.0005552208,0.9958985,0.001272414,0.00004743982,0.001805656],"study_design_scores_gemma":[0.000006064129,0.00004357965,0.0004030518,0.000003549468,0.000005087929,0.00004594434,0.000008229301,0.005352808,0.9933532,0.0002531717,0.0005200809,0.000005167451],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.974451,0.0004865818,0.0229026,0.00005704361,0.00001923993,0.00001497964,0.00005004437,0.0001752769,0.00184314],"genre_scores_gemma":[0.9907506,0.000290278,0.007833865,0.00002007923,0.00000625211,0.00001856519,0.0000566238,0.0000696276,0.0009541371],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.0006299387,"threshold_uncertainty_score":0.002663195,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2904435640","doi":"10.1109/access.2018.2885285","title":"GaN Integration Technology, an Ideal Candidate for High-Temperature Applications: A Review","year":2018,"lang":"en","type":"review","venue":"IEEE Access","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":144,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":true,"ca_fund":true,"ca_venue":false,"about_ca":false},"ca_institutions":"Polytechnique Montréal","funders":"Natural Sciences and Engineering Research Council of Canada; Airbus","keywords":"Microelectronics; Materials science; Silicon carbide; Gallium nitride; Engineering physics; Silicon; Wide-bandgap semiconductor; Optoelectronics; Power semiconductor device; Aerospace; Gallium arsenide; Reliability (semiconductor); Electronic engineering; Nanotechnology; Electrical engineering; Power (physics); Engineering; Aerospace engineering","authors":[{"name":"Ahmad Hassan","is_ca":true},{"name":"Yvon Savaria","is_ca":true},{"name":"Mohamad Sawan","is_ca":true}],"retraction":null,"screen_n_in":null,"score":{"opus":0.04037036405521544,"gpt":0.3799919198835872,"spread":0.3396215558283718,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"metacan-v3-hybrid-931329e0061c","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0002502395,0.0006492464,0.0005766909,0.001378524,0.0002185184,0.0006803374,0.0005736382,0.0006801657,0.003663152],"category_scores_gemma":[0.000313401,0.0002417502,0.0003183317,0.00134506,0.0001751473,0.0009265503,0.0003027866,0.0007433862,0.001382792],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.0003040629,"about_ca_system_score_gemma":0.0006250336,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.0007927264,"about_ca_topic_score_gemma":0.001500775,"domain_scores_codex":[0.9999087,0.000009641843,0.00001076981,0.00002203927,0.00003858823,0.00001022351],"domain_scores_gemma":[0.9998692,0.00005680719,0.00002099897,0.0000038318,0.00003778376,0.00001140959],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"design_other","study_design_gemma":"not_applicable","study_design_scores_codex":[0.00003815987,0.00007954391,0.0002693791,0.02375622,0.00005718792,0.0003405722,0.00007818004,0.0007185855,0.006830325,0.007828017,0.02645915,0.9335446],"study_design_scores_gemma":[0.000004885501,0.00007921021,0.000481186,0.001985321,0.00006672116,0.001020024,0.00004682615,0.0001343553,0.00134437,0.001191093,0.9936345,0.00001165233],"study_design_candidate":"not_applicable","study_design_consensus":null,"genre_codex":"review","genre_gemma":"review","genre_scores_codex":[0.0002729916,0.9971625,0.0002256525,0.0001398908,0.0001698877,0.000005599645,0.00001727948,0.000006762408,0.001999357],"genre_scores_gemma":[0.00168284,0.996657,0.0003628322,0.00009770907,0.000108879,0.000007078508,0.00003164861,0.000002000173,0.001049933],"genre_candidate":"review","genre_consensus":"review","teacher_disagreement_score":0.003663152,"threshold_uncertainty_score":0.01225448,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2268224374","doi":"10.1063/1.4941239","title":"Enhancing the light extraction efficiency of AlGaN deep ultraviolet light emitting diodes by using nanowire structures","year":2016,"lang":"en","type":"article","venue":"Applied Physics Letters","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":130,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":true,"ca_fund":true,"ca_venue":false,"about_ca":false},"ca_institutions":"McGill University","funders":"Fonds de recherche du Québec – Nature et technologies; Natural Sciences and Engineering Research Council of Canada","keywords":"Nanowire; Materials science; Optoelectronics; Light-emitting diode; Ultraviolet; Diode; Light emission; Wide-bandgap semiconductor; Extraction (chemistry); Ultraviolet light; Green-light; Blue light; Chemistry","authors":[{"name":"Mehrdad Djavid","is_ca":true},{"name":"Zetian Mi","is_ca":true}],"retraction":null,"screen_n_in":null,"score":{"opus":0.007248123609130105,"gpt":0.2256521839725092,"spread":0.2184040603633791,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"metacan-v3-hybrid-931329e0061c","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00008366182,0.0001964987,0.000128874,0.00008424616,0.000106388,0.0002933119,0.0002078645,0.0001704892,0.0003049158],"category_scores_gemma":[0.0001548843,0.0001807192,0.000108087,0.0001070552,0.0001429661,0.0002690412,0.0001268419,0.0001557282,0.0001283334],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.0003632033,"about_ca_system_score_gemma":0.0001970101,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.0006485043,"about_ca_topic_score_gemma":0.001246761,"domain_scores_codex":[0.9999677,0.000003715106,0.000001922258,0.000005314767,0.00001487805,0.000006410075],"domain_scores_gemma":[0.9999496,0.00001776055,0.00001374616,0.000005098917,0.000009531121,0.000004284135],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.00003145222,0.00003820417,0.0005387077,0.00003427776,0.00000772788,0.00004650873,0.00002091484,0.00764996,0.987155,0.001560685,0.00007341615,0.00284317],"study_design_scores_gemma":[0.00003178561,0.0001255451,0.001333764,0.00000807188,0.00001480729,0.00005408386,0.00001970907,0.1411419,0.8551359,0.0005229609,0.001597664,0.00001393725],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9844288,0.0001889678,0.01297174,0.00005448562,0.00001546223,0.000007279133,0.00005232401,0.0000858579,0.002195076],"genre_scores_gemma":[0.9852563,0.0002472957,0.01336988,0.00001378649,0.000004591167,0.00001770964,0.00004238859,0.0000267592,0.001021265],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.0006485043,"threshold_uncertainty_score":0.002635241,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2579269796","doi":"10.1021/acs.nanolett.6b05002","title":"An AlGaN Core–Shell Tunnel Junction Nanowire Light-Emitting Diode Operating in the Ultraviolet-C Band","year":2017,"lang":"en","type":"letter","venue":"Nano Letters","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":130,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":true,"ca_fund":true,"ca_venue":false,"about_ca":false},"ca_institutions":"McGill University","funders":"Army Research Office; Natural Sciences and Engineering Research Council of Canada","keywords":"Nanowire; Optoelectronics; Materials science; Diode; Ultraviolet; Light-emitting diode; Tunnel junction; Core (optical fiber); Quantum tunnelling; Composite material","authors":[{"name":"Sharif Sadaf","is_ca":true},{"name":"Songrui Zhao","is_ca":true},{"name":"Yuanpeng Wu","is_ca":true},{"name":"Yong‐Ho Ra","is_ca":true},{"name":"Xiao Liu","is_ca":true},{"name":"Srinivas Vanka","is_ca":true},{"name":"Zetian Mi","is_ca":false}],"retraction":null,"screen_n_in":null,"score":{"opus":0.02065888366583004,"gpt":0.2583081828844863,"spread":0.2376492992186563,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"metacan-v3-hybrid-931329e0061c","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00007737952,0.00011211,0.0001006854,0.00007151483,0.000248869,0.0003392563,0.0002879048,0.0004078654,0.0006645297],"category_scores_gemma":[0.0001265082,0.0000881915,0.00009487771,0.0001208832,0.0001859382,0.0002428556,0.0001504572,0.0002852711,0.0002262585],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.0002749337,"about_ca_system_score_gemma":0.0002331801,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.0004420552,"about_ca_topic_score_gemma":0.0008827795,"domain_scores_codex":[0.9999408,0.000006024613,0.000002641544,0.00001383044,0.00002619882,0.00001053448],"domain_scores_gemma":[0.9999619,0.000007063869,0.000004059658,0.000005148566,0.00001408548,0.000007856768],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.00006588138,0.00009825062,0.0009834503,0.00009400136,0.000009933491,0.001404519,0.00006768257,0.0005329392,0.9791709,0.006415599,0.002366856,0.00879011],"study_design_scores_gemma":[0.00002975511,0.0003931125,0.004061395,0.00001720365,0.00002340239,0.003289833,0.00006572476,0.03238091,0.9271649,0.001940813,0.03061045,0.00002251032],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9631698,0.0007102289,0.01187944,0.001408575,0.0003734049,0.0000582833,0.0002821458,0.0003842774,0.02173376],"genre_scores_gemma":[0.9768544,0.0005567687,0.01160519,0.0001794164,0.00004131317,0.00002100449,0.0001751523,0.00002162292,0.0105451],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.0006645297,"threshold_uncertainty_score":0.002223074,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2595476656","doi":"10.1109/tpel.2017.2684094","title":"Instability Analysis and Oscillation Suppression of Enhancement-Mode GaN Devices in Half-Bridge Circuits","year":2017,"lang":"en","type":"article","venue":"IEEE Transactions on Power Electronics","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":129,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"Queen's University","funders":"China Scholarship Council; National Natural Science Foundation of China","keywords":"Oscillation (cell signaling); Electronic circuit; Instability; Parasitic element; Inductance; Capacitor; Control theory (sociology); Transistor; Gallium nitride; Overvoltage; Optoelectronics; Materials science; Physics; Electrical engineering; Mechanics; Engineering; Voltage; Computer science","authors":[{"name":"Kangping Wang","is_ca":false},{"name":"Xu Yang","is_ca":false},{"name":"Laili Wang","is_ca":false},{"name":"Praveen Jain","is_ca":true}],"retraction":null,"screen_n_in":null,"score":{"opus":0.0149095045619557,"gpt":0.2831923272067899,"spread":0.2682828226448342,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"metacan-v3-hybrid-931329e0061c","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0001833043,0.0001955492,0.0001754444,0.0001972902,0.0001249292,0.0002099874,0.0003489511,0.0002288121,0.000670493],"category_scores_gemma":[0.0003767612,0.00007566057,0.0001877761,0.0001043126,0.0001561866,0.0003886085,0.0001242957,0.0001757818,0.00008257358],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.0002301036,"about_ca_system_score_gemma":0.00008442139,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.0003257515,"about_ca_topic_score_gemma":0.00026435,"domain_scores_codex":[0.9999133,0.00001617999,0.000003735246,0.00001727964,0.00004034074,0.000009213946],"domain_scores_gemma":[0.9998617,0.00005921792,0.00002426866,0.000008300847,0.00004066511,0.000005754897],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.0002024548,0.00004686009,0.0022899,0.0001883738,0.00003514127,0.000275749,0.0003488734,0.07052522,0.8719308,0.01138931,0.0003488265,0.04241845],"study_design_scores_gemma":[0.000008158386,0.0001690682,0.001829577,0.000011742,0.00001353909,0.000132225,0.00003292115,0.945542,0.04950201,0.001933447,0.0008166981,0.000008581947],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.6299973,0.00116505,0.3622765,0.0001237237,0.00003301206,0.00004151699,0.00003971653,0.000249673,0.006073387],"genre_scores_gemma":[0.9945384,0.0001481489,0.004687711,0.00001077505,0.00000669835,0.00001167452,0.00001117601,0.000006792281,0.0005787287],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.000670493,"threshold_uncertainty_score":0.002243042,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W1660116595","doi":"10.1063/1.1352684","title":"Ultraviolet photoenhanced wet etching of GaN in K2S2O8 solution","year":2001,"lang":"en","type":"article","venue":"Journal of Applied Physics","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":123,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"Institute for Microstructural Sciences","funders":"","keywords":"Etching (microfabrication); Materials science; Oxidizing agent; Reactive-ion etching; Ultraviolet light; Doping; Ultraviolet; Nitride; Passivation; Sapphire; Peroxydisulfate; Chemical engineering; Analytical Chemistry (journal); Inorganic chemistry; Layer (electronics); Chemistry; Nanotechnology; Optoelectronics; Metallurgy; Optics; Organic chemistry; Laser","authors":[{"name":"J. A. Bardwell","is_ca":true},{"name":"J. B. Webb","is_ca":true},{"name":"H. Tang","is_ca":true},{"name":"J. Fraser","is_ca":true},{"name":"S. Moisa","is_ca":true}],"retraction":null,"screen_n_in":null,"score":{"opus":0.01342134213905272,"gpt":0.248889322622621,"spread":0.2354679804835683,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"metacan-v3-hybrid-931329e0061c","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0001131171,0.0002923718,0.0001815389,0.00009256649,0.0001092029,0.0001724401,0.0002192704,0.0001958274,0.0008323733],"category_scores_gemma":[0.0000949886,0.0001508778,0.0001268796,0.00008607145,0.0001495943,0.000157354,0.0001355093,0.0002308566,0.0002276618],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.0001636231,"about_ca_system_score_gemma":0.000117407,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.00047949,"about_ca_topic_score_gemma":0.001003327,"domain_scores_codex":[0.9999282,0.000009293456,0.000004371318,0.00001508572,0.00002450752,0.0000183975],"domain_scores_gemma":[0.9999617,0.00001061422,0.00001101963,0.000004637372,0.00000698744,0.000005059549],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.00001678559,0.000002744339,0.0000245926,0.00002418671,0.00000126607,0.0000246372,0.000009046803,0.00003610365,0.9991278,0.00003479941,0.00001188491,0.000686151],"study_design_scores_gemma":[0.000007851771,0.00006447997,0.0007094208,0.000002305996,0.000002690593,0.00007836537,0.00001014383,0.0007640598,0.9975719,0.00003496297,0.0007507744,0.000003044124],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9930393,0.0008393203,0.004099313,0.00004694879,0.00003717389,0.0000224561,0.00007759609,0.00008108305,0.001756838],"genre_scores_gemma":[0.9885185,0.000777097,0.007614984,0.00002136529,0.00001362637,0.00001725734,0.00009411239,0.00002479721,0.002918113],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.0008323733,"threshold_uncertainty_score":0.00278461,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2076799323","doi":"10.1063/1.3284660","title":"High efficiency green, yellow, and amber emission from InGaN/GaN dot-in-a-wire heterostructures on Si(111)","year":2010,"lang":"en","type":"article","venue":"Applied Physics Letters","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":117,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"McGill University","funders":"","keywords":"Heterojunction; Materials science; Quantum dot; Nanoclusters; Optoelectronics; Molecular beam epitaxy; Epitaxy; Nanoscopic scale; Photoluminescence; Wide-bandgap semiconductor; Nanotechnology; Layer (electronics)","authors":[{"name":"Y.‐L. Chang","is_ca":true},{"name":"J. L. Wang","is_ca":true},{"name":"F. Li","is_ca":true},{"name":"Zetian Mi","is_ca":true}],"retraction":null,"screen_n_in":null,"score":{"opus":0.005987120913593978,"gpt":0.2082731577822406,"spread":0.2022860368686467,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"metacan-v3-hybrid-931329e0061c","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0001409012,0.0003452155,0.0002646952,0.0001391967,0.0002107657,0.000305621,0.0002472928,0.0002124887,0.0004513952],"category_scores_gemma":[0.0001068866,0.0002195017,0.0002098067,0.0001421231,0.0002071265,0.000207267,0.0002140012,0.0003268145,0.0002404926],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.0002145542,"about_ca_system_score_gemma":0.0000972713,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.0007061132,"about_ca_topic_score_gemma":0.001741405,"domain_scores_codex":[0.9998993,0.00001163075,0.00000525331,0.00002413888,0.00003851287,0.00002116125],"domain_scores_gemma":[0.9999154,0.00002259919,0.00001855162,0.00001182485,0.00001668755,0.00001491801],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.00002232073,0.00001076495,0.0001708494,0.00003174313,0.000006097372,0.00004633669,0.00003577645,0.00007880693,0.9983702,0.00009931092,0.00004283122,0.001084895],"study_design_scores_gemma":[0.000007324473,0.00006007502,0.001220992,0.000001526783,0.000007721716,0.00005988295,0.00001046927,0.0007299018,0.997438,0.00001922438,0.0004404376,0.000004349758],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9963993,0.0002531199,0.001998905,0.00003882467,0.000007692172,0.000009456853,0.00005606001,0.00007560055,0.00116101],"genre_scores_gemma":[0.9899365,0.0003795443,0.007037463,0.00002126043,0.000009202987,0.00001479037,0.0001172088,0.00004714965,0.002436909],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.0007061132,"threshold_uncertainty_score":0.001556635,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2076066569","doi":"10.1038/srep07744","title":"Engineering the Carrier Dynamics of InGaN Nanowire White Light-Emitting Diodes by Distributed p-AlGaN Electron Blocking Layers","year":2015,"lang":"en","type":"article","venue":"Scientific Reports","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":117,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":true,"ca_fund":true,"ca_venue":false,"about_ca":false},"ca_institutions":"McMaster University; Brockhouse Institute for Materials Research; McGill University","funders":"McMaster University; Natural Sciences and Engineering Research Council of Canada; McGill University","keywords":"Nanowire; Materials science; Optoelectronics; Heterojunction; Light-emitting diode; Diode; Quantum dot; Luminescence; Quantum well; Wide-bandgap semiconductor; Band gap; Electron; Optics; Physics; Laser","authors":[{"name":"Hieu Pham Trung Nguyen","is_ca":true},{"name":"Mehrdad Djavid","is_ca":true},{"name":"Steffi Y. Woo","is_ca":true},{"name":"Xianhe Liu","is_ca":true},{"name":"Ashfiqua T. Connie","is_ca":true},{"name":"Sharif Sadaf","is_ca":true},{"name":"Qi Wang","is_ca":true},{"name":"Gianluigi A. Botton","is_ca":true},{"name":"I. Shih","is_ca":true},{"name":"Zetian Mi","is_ca":true}],"retraction":null,"screen_n_in":null,"score":{"opus":0.007505145839517936,"gpt":0.2160473425444722,"spread":0.2085421967049542,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"metacan-v3-hybrid-931329e0061c","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00007761778,0.0001977851,0.00007536375,0.00006430942,0.0001202079,0.0002508065,0.0002508852,0.0001054618,0.0002988378],"category_scores_gemma":[0.0001208738,0.0001013522,0.0000737627,0.00005640007,0.000137838,0.0002529144,0.0001347889,0.0001697628,0.0001356671],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.0002575355,"about_ca_system_score_gemma":0.0002275268,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.0008813823,"about_ca_topic_score_gemma":0.001266592,"domain_scores_codex":[0.9999672,0.000003738063,0.000001929788,0.000007841913,0.00001027256,0.000009069941],"domain_scores_gemma":[0.9999468,0.00001208924,0.00001600542,0.000006226298,0.00001206361,0.00000684936],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.00001253142,0.00001033424,0.00020037,0.00001256974,0.000001427072,0.00001935837,0.00001503101,0.0002370559,0.9979888,0.000422784,0.00001871883,0.001061003],"study_design_scores_gemma":[0.000005043638,0.0000347861,0.0005248096,0.000001544661,0.000004579313,0.00003820091,0.00001056912,0.009904585,0.9888371,0.00009169315,0.00054357,0.000003397181],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9930928,0.0001337358,0.005701187,0.00002882841,0.000008672549,0.000006811721,0.00003292069,0.00005882908,0.0009361737],"genre_scores_gemma":[0.9920359,0.0002130022,0.006743788,0.000009284392,0.000003950072,0.00001319893,0.00003050443,0.00001770077,0.0009326599],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.0008813823,"threshold_uncertainty_score":0.001868546,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2144463384","doi":"10.1007/s11082-011-9437-z","title":"Electron leakage effects on GaN-based light-emitting diodes","year":2010,"lang":"en","type":"article","venue":"Optical and Quantum Electronics","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":108,"is_retracted":false,"has_abstract":false,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"Crosslight Software (Canada)","funders":"","keywords":"Voltage droop; Materials science; Optoelectronics; Light-emitting diode; Diode; Leakage (economics); Quantum efficiency; Electron; Gallium nitride; Layer (electronics); Physics; Voltage; Nanotechnology","authors":[{"name":"Joachim Piprek","is_ca":false},{"name":"Simon Li","is_ca":true}],"retraction":null,"screen_n_in":null,"score":{"opus":0.005514214428727142,"gpt":0.2330019614828938,"spread":0.2274877470541666,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"metacan-v3-hybrid-931329e0061c","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0004063977,0.0003575972,0.0005696513,0.0003351951,0.0003854875,0.0007644624,0.0006329534,0.0004657835,0.001495745],"category_scores_gemma":[0.0008712196,0.0002178225,0.0003518984,0.0004295635,0.0004807388,0.001122441,0.000337104,0.0003717448,0.0003449135],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.001117542,"about_ca_system_score_gemma":0.0002043192,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.0009615215,"about_ca_topic_score_gemma":0.001095357,"domain_scores_codex":[0.9997042,0.00006915165,0.00001432725,0.00004173033,0.00009202514,0.00007859364],"domain_scores_gemma":[0.9993809,0.0003170902,0.00009095865,0.00005260012,0.0001295596,0.00002892365],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.002767349,0.0002955985,0.004824552,0.0007447068,0.0001778664,0.001325891,0.0006920332,0.01122937,0.9498219,0.00951119,0.001716655,0.01689285],"study_design_scores_gemma":[0.0000789734,0.0006942846,0.008937486,0.0001195246,0.0002169824,0.001003465,0.0002100682,0.05293803,0.9288816,0.002010625,0.004848941,0.00005996268],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9875332,0.003711407,0.003778321,0.0001918252,0.00006936735,0.00001732339,0.0001482834,0.0002349453,0.004315256],"genre_scores_gemma":[0.9970164,0.0005766327,0.0004192438,0.00005584973,0.00001916063,0.000006346114,0.00005686323,0.00004151959,0.001807946],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.001495745,"threshold_uncertainty_score":0.008108377,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W1983815769","doi":"10.1021/nl4030819","title":"p-Type InN Nanowires","year":2013,"lang":"en","type":"article","venue":"Nano Letters","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":107,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"McGill University","funders":"","keywords":"Nanowire; Doping; Materials science; Dopant; Photoluminescence; Acceptor; Optoelectronics; Field-effect transistor; Condensed matter physics; Nanotechnology; Transistor; Physics","authors":[{"name":"Songrui Zhao","is_ca":true},{"name":"Binh Huy Le","is_ca":true},{"name":"D. P. Liu","is_ca":true},{"name":"X. D. Liu","is_ca":true},{"name":"Md Golam Kibria","is_ca":true},{"name":"Thomas Szkopek","is_ca":true},{"name":"Hong Guo","is_ca":true},{"name":"Zetian Mi","is_ca":true}],"retraction":null,"screen_n_in":null,"score":{"opus":0.01069236084574317,"gpt":0.2230032096909094,"spread":0.2123108488451662,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"metacan-v3-hybrid-931329e0061c","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00003624935,0.0001328275,0.00007642662,0.00004979486,0.0001132699,0.0002643036,0.0002239079,0.0001729895,0.0006009713],"category_scores_gemma":[0.00009876065,0.00006646202,0.00006774454,0.00006112853,0.00006188468,0.0001918093,0.0001363507,0.0001513018,0.0003238277],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.0001041181,"about_ca_system_score_gemma":0.00005324379,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.0002170501,"about_ca_topic_score_gemma":0.0006136821,"domain_scores_codex":[0.9999502,0.000003103885,0.000002766588,0.00001718968,0.00002014811,0.000006644046],"domain_scores_gemma":[0.999971,0.000004989408,0.000006887675,0.000005845795,0.000006862216,0.000004298293],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.00002579155,0.00001491309,0.0007307209,0.00005447474,0.000006326769,0.000267264,0.00001925702,0.0003829435,0.9896517,0.002337782,0.0004389413,0.006069672],"study_design_scores_gemma":[0.000008121718,0.00008663454,0.002561712,0.000005887553,0.00001294972,0.000657096,0.00002207305,0.008002478,0.9796509,0.0008425867,0.008143554,0.000005867297],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9454623,0.0009724713,0.01745141,0.0001963826,0.0001859757,0.0000197511,0.0003116479,0.0002039584,0.03519595],"genre_scores_gemma":[0.9851659,0.0003527674,0.008788306,0.00003678775,0.00001728455,0.00001027625,0.0001431123,0.00002199221,0.005463545],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.0006009713,"threshold_uncertainty_score":0.002010405,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2088637045","doi":"10.1088/0957-4484/22/44/445202","title":"Full-color InGaN/GaN dot-in-a-wire light emitting diodes on silicon","year":2011,"lang":"en","type":"article","venue":"Nanotechnology","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":107,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"McGill University","funders":"","keywords":"Materials science; Light-emitting diode; Optoelectronics; Quantum dot; Indium; Diode; Epitaxy; Indium gallium nitride; Heterojunction; Phosphor; Voltage droop; Nanowire; Silicon; Gallium nitride; Voltage; Nanotechnology; Layer (electronics)","authors":[{"name":"Hieu Pham Trung Nguyen","is_ca":true},{"name":"Kai Cui","is_ca":true},{"name":"Shaofei Zhang","is_ca":true},{"name":"Saeed Fathololoumi","is_ca":true},{"name":"Zetian Mi","is_ca":true}],"retraction":null,"screen_n_in":null,"score":{"opus":0.01784772097306866,"gpt":0.2350827204360445,"spread":0.2172349994629758,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"metacan-v3-hybrid-931329e0061c","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00004328332,0.0001752192,0.0001175435,0.00007120853,0.00009662527,0.0002042279,0.0001894466,0.0001143683,0.001263559],"category_scores_gemma":[0.00003810852,0.0000875727,0.0001244719,0.00006826111,0.00008167658,0.0001671557,0.0001495934,0.000134081,0.0004942375],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.0001190988,"about_ca_system_score_gemma":0.00007030219,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.0002317017,"about_ca_topic_score_gemma":0.0008166773,"domain_scores_codex":[0.9999663,0.000002899063,0.000001408419,0.000007364373,0.00001510881,0.000006869956],"domain_scores_gemma":[0.9999776,0.000004457925,0.000004133986,0.000003761339,0.00000602024,0.000003981299],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.00001780484,0.00001351419,0.0002581581,0.00004732212,0.000005207109,0.00004933592,0.00001362624,0.0003392841,0.9935386,0.0006660677,0.0002013171,0.004849893],"study_design_scores_gemma":[0.000007165107,0.0001008631,0.001691652,0.000004543369,0.000009638415,0.0001773375,0.00001160038,0.005354667,0.9875782,0.0002157147,0.004844145,0.000004500843],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9717672,0.001251649,0.01393099,0.00009438723,0.0000505376,0.0000245328,0.0002070228,0.0002546429,0.01241914],"genre_scores_gemma":[0.974825,0.001370861,0.0173479,0.00004251856,0.00001486055,0.00001929598,0.0002726184,0.00004021682,0.006066623],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.001263559,"threshold_uncertainty_score":0.004227042,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W4321482336","doi":"10.1021/acsami.2c21463","title":"Metal-Decorated InN Monolayer Senses N<sub>2</sub> against CO<sub>2</sub>","year":2023,"lang":"en","type":"article","venue":"ACS Applied Materials & Interfaces","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":105,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"McGill University","funders":"University of Science and Technology Liaoning; Department of Education of Liaoning Province; National Natural Science Foundation of China","keywords":"Monolayer; Materials science; Density functional theory; Adsorption; Selectivity; Metal; Transition metal; Band gap; Binding energy; Nanotechnology; Chemical physics; Computational chemistry; Physical chemistry; Optoelectronics; Catalysis; Chemistry; Atomic physics; Organic chemistry; Metallurgy","authors":[{"name":"Lin Tao","is_ca":false},{"name":"Davoud Dastan","is_ca":false},{"name":"Wensen Wang","is_ca":false},{"name":"Preeyaporn Poldorn","is_ca":false},{"name":"Xian-Ze Meng","is_ca":false},{"name":"Mingjie Wu","is_ca":true},{"name":"Hongwei Zhao","is_ca":false},{"name":"Han Zhang","is_ca":false},{"name":"Lixiang Li","is_ca":false},{"name":"Baigang An","is_ca":false}],"retraction":null,"screen_n_in":null,"score":{"opus":0.01728269372291161,"gpt":0.2470688280160077,"spread":0.2297861342930961,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"metacan-v3-hybrid-931329e0061c","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00005129085,0.0002222211,0.0002206507,0.00008412021,0.000141048,0.0001836877,0.0003030271,0.0002882503,0.0008159746],"category_scores_gemma":[0.0001116081,0.0001091935,0.0001274882,0.00006727824,0.0001934133,0.000221992,0.0001863618,0.0001896076,0.0001349243],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.0002386245,"about_ca_system_score_gemma":0.00008123872,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.001073371,"about_ca_topic_score_gemma":0.002178576,"domain_scores_codex":[0.9999398,0.000004199729,0.000002084111,0.00001786035,0.0000230673,0.00001297777],"domain_scores_gemma":[0.9999672,0.00001015867,0.000007606024,0.000003800037,0.000007430524,0.000003839953],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"simulation_or_modeling","study_design_scores_codex":[0.00004541594,0.00001058088,0.0003731443,0.00004815042,0.00000536086,0.00005058972,0.00001516157,0.0002637916,0.9976165,0.000147484,0.00008619237,0.001337657],"study_design_scores_gemma":[0.000002885379,0.00005256089,0.002140538,0.000004156749,0.000009516127,0.00007755005,0.00004903261,0.007597982,0.9893703,0.00006871353,0.0006199894,0.000006746419],"study_design_candidate":"simulation_or_modeling","study_design_consensus":null,"genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9935441,0.0003327535,0.003314286,0.00007437249,0.00004923805,0.000006816441,0.0001519842,0.0001196445,0.002406815],"genre_scores_gemma":[0.9948318,0.00021946,0.003476333,0.00007168395,0.000005887493,0.000007953223,0.00008834556,0.00001145227,0.001286934],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.001073371,"threshold_uncertainty_score":0.002729774,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2485158864","doi":"10.1002/adma.201602645","title":"Controlled Coalescence of AlGaN Nanowire Arrays: An Architecture for Nearly Dislocation‐Free Planar Ultraviolet Photonic Device Applications","year":2016,"lang":"en","type":"article","venue":"Advanced Materials","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":104,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"McMaster University; McGill University","funders":"","keywords":"Materials science; Nanowire; Optoelectronics; Coalescence (physics); Sapphire; Planar; Ultraviolet; Diode; Dislocation; Photonics; Template; Epitaxy; Nanotechnology; Optics; Composite material; Laser","authors":[{"name":"Binh Huy Le","is_ca":true},{"name":"Songrui Zhao","is_ca":true},{"name":"Xianhe Liu","is_ca":true},{"name":"Steffi Y. Woo","is_ca":true},{"name":"Gianluigi A. Botton","is_ca":true},{"name":"Zetian Mi","is_ca":true}],"retraction":null,"screen_n_in":null,"score":{"opus":0.01028373203835737,"gpt":0.2554660814181696,"spread":0.2451823493798122,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"metacan-v3-hybrid-931329e0061c","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00005193121,0.0002125353,0.0001394985,0.0001195525,0.0001358243,0.0003674761,0.0004235715,0.0001769171,0.0004639337],"category_scores_gemma":[0.00008981661,0.0002095951,0.000110255,0.0001646742,0.0001389287,0.0002904891,0.0002808526,0.0002233618,0.0002413596],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.000330641,"about_ca_system_score_gemma":0.0002138572,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.0003832204,"about_ca_topic_score_gemma":0.001211603,"domain_scores_codex":[0.999923,0.000005541842,0.000005003903,0.00002414659,0.00002786686,0.00001437757],"domain_scores_gemma":[0.9999139,0.00001005837,0.00003356275,0.00001447486,0.00001335014,0.00001458146],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.0000151564,0.00001127749,0.00009778894,0.000009885002,0.000002923029,0.0000324681,0.00001062857,0.0002746289,0.9970313,0.000350114,0.00003083243,0.002132738],"study_design_scores_gemma":[0.00001108487,0.00005992774,0.0005156164,0.000001135118,0.000004906467,0.0001071185,0.00001606697,0.007648584,0.9900554,0.0001849764,0.001390323,0.00000475984],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9648939,0.0003563513,0.0312499,0.00005761544,0.00002821436,0.00002650041,0.0001106697,0.0003215598,0.00295532],"genre_scores_gemma":[0.983412,0.0002152704,0.01432783,0.00002245716,0.00000611561,0.00002578441,0.0001013274,0.00004578583,0.001843422],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.0004639337,"threshold_uncertainty_score":0.002398968,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2415094868","doi":"10.1021/acs.nanolett.5b02515","title":"Alternating-Current InGaN/GaN Tunnel Junction Nanowire White-Light Emitting Diodes","year":2015,"lang":"en","type":"article","venue":"Nano Letters","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":104,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":true,"ca_fund":true,"ca_venue":false,"about_ca":false},"ca_institutions":"McGill University","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Light-emitting diode; Optoelectronics; Materials science; Phosphor; Diode; Nanowire; Voltage droop; Wide-bandgap semiconductor; Light emission; Doping; Voltage; Gallium nitride; Tunnel junction; Solid-state lighting; Layer (electronics); Nanotechnology; Electrical engineering; Quantum tunnelling; Voltage source","authors":[{"name":"Sharif Sadaf","is_ca":true},{"name":"Yong‐Ho Ra","is_ca":true},{"name":"Hieu Pham Trung Nguyen","is_ca":true},{"name":"Mehrdad Djavid","is_ca":true},{"name":"Zetian Mi","is_ca":true}],"retraction":null,"screen_n_in":null,"score":{"opus":0.0236140699848496,"gpt":0.2537248144127369,"spread":0.2301107444278873,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"metacan-v3-hybrid-931329e0061c","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00008803765,0.0001465275,0.0001203145,0.00009854343,0.0001040405,0.00022168,0.0004036739,0.0001353569,0.001011212],"category_scores_gemma":[0.0001025621,0.00007610154,0.0000948511,0.0001182782,0.0001295198,0.0003374781,0.0001436075,0.0001866793,0.0002809474],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.0001726425,"about_ca_system_score_gemma":0.0001085182,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.0002509776,"about_ca_topic_score_gemma":0.0007383132,"domain_scores_codex":[0.9999266,0.000005856929,0.000004221832,0.00002132636,0.00003177616,0.00001020653],"domain_scores_gemma":[0.9999479,0.000009977695,0.00001318866,0.000007781508,0.00001334561,0.000007705285],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.00003059808,0.00002030246,0.0003472704,0.00003720973,0.000003775202,0.00005595252,0.00001322169,0.0002389584,0.9938412,0.0009752112,0.0001044401,0.004331972],"study_design_scores_gemma":[0.000008527576,0.00009191724,0.001442393,0.000004568162,0.000009816435,0.0002814675,0.0000143851,0.0104923,0.9842482,0.0003462291,0.003053018,0.000007149574],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9579534,0.0006365575,0.0326231,0.00007462881,0.00006921073,0.00002672495,0.00017606,0.0002724344,0.008167903],"genre_scores_gemma":[0.9842165,0.0003219986,0.01204284,0.00001994689,0.00001100044,0.00001216409,0.00006247534,0.00001593085,0.00329719],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.001011212,"threshold_uncertainty_score":0.003382862,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W1976926230","doi":"10.1007/s11661-013-1622-1","title":"Progress in Indium Gallium Nitride Materials for Solar Photovoltaic Energy Conversion","year":2013,"lang":"en","type":"article","venue":"Metallurgical and Materials Transactions A","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":103,"is_retracted":false,"has_abstract":false,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"Queen's University","funders":"","keywords":"Photovoltaic system; Engineering physics; Solar energy; Band gap; Optoelectronics; Materials science; Indium; Gallium nitride; Photovoltaics; Indium gallium nitride; Nanotechnology; Electrical engineering; Engineering","authors":[{"name":"Dirk V. P. McLaughlin","is_ca":true},{"name":"Joshua M. Pearce","is_ca":false}],"retraction":null,"screen_n_in":null,"score":{"opus":0.01001620930203644,"gpt":0.2208157717797703,"spread":0.2107995624777338,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"metacan-v3-hybrid-931329e0061c","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00071037,0.0003233298,0.0002404725,0.0003319739,0.0002365577,0.0008205922,0.0004511287,0.0004315276,0.00260799],"category_scores_gemma":[0.0003543112,0.0001672309,0.000183439,0.0004322343,0.0002141971,0.001211717,0.0004547084,0.0005987629,0.0009834291],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.0003601499,"about_ca_system_score_gemma":0.0005895031,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.0004932595,"about_ca_topic_score_gemma":0.001125511,"domain_scores_codex":[0.9998604,0.00002473181,0.00001072699,0.00002382569,0.00005621012,0.00002399543],"domain_scores_gemma":[0.9999037,0.00002645557,0.00001199554,0.00001119533,0.000035048,0.00001153725],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"not_applicable","study_design_scores_codex":[0.000373327,0.0002771269,0.001374927,0.003291087,0.0000561592,0.0002752371,0.0003440437,0.002520398,0.7175951,0.03044739,0.006849002,0.2365962],"study_design_scores_gemma":[0.00004914339,0.0005223452,0.003412621,0.0003980391,0.00008321201,0.0006596912,0.0002032637,0.005512768,0.701542,0.003905806,0.2836761,0.0000349801],"study_design_candidate":"not_applicable","study_design_consensus":null,"genre_codex":"review","genre_gemma":"review","genre_scores_codex":[0.3673366,0.4914294,0.01768453,0.002892804,0.00120231,0.00007306052,0.0004286991,0.0003353276,0.1186172],"genre_scores_gemma":[0.7187316,0.2297736,0.02198816,0.0005681816,0.0005189233,0.00007436094,0.0008286544,0.0001180054,0.02739842],"genre_candidate":"review","genre_consensus":"review","teacher_disagreement_score":0.00260799,"threshold_uncertainty_score":0.00872463,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W1972506432","doi":"10.1002/pssa.201026489","title":"Effects of polarization charge on the photovoltaic properties of InGaN solar cells","year":2010,"lang":"en","type":"article","venue":"physica status solidi (a)","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":102,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"Crosslight Software (Canada)","funders":"","keywords":"Optoelectronics; Photovoltaic system; Polarization (electrochemistry); Materials science; Open-circuit voltage; Electric field; Charge carrier; Voltage; Solar cell; Short circuit; Theory of solar cells; Charge (physics); Solar cell efficiency; Physics; Electrical engineering; Chemistry","authors":[{"name":"Z. Q. Li","is_ca":true},{"name":"M. Lestradet","is_ca":true},{"name":"Yuanzhang Xiao","is_ca":true},{"name":"S. Li","is_ca":true}],"retraction":null,"screen_n_in":null,"score":{"opus":0.00971321606769487,"gpt":0.2139967220223031,"spread":0.2042835059546083,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"metacan-v3-hybrid-931329e0061c","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000203267,0.000343437,0.0004152174,0.0002001951,0.0004359633,0.0007930759,0.0002087171,0.0003956131,0.002376633],"category_scores_gemma":[0.0007783515,0.0001930522,0.0003661797,0.000258777,0.0003631003,0.0003922231,0.0002838747,0.0004422971,0.0002062897],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.0005948785,"about_ca_system_score_gemma":0.0003642654,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.002826596,"about_ca_topic_score_gemma":0.00143954,"domain_scores_codex":[0.9999064,0.000016714,0.000002744865,0.000008814312,0.0000289014,0.00003640556],"domain_scores_gemma":[0.9996806,0.0001992893,0.00002332546,0.00001944141,0.00005587483,0.00002134704],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"simulation_or_modeling","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.0006661295,0.000313792,0.007475374,0.0001304342,0.000115372,0.0005995157,0.0001518785,0.7777182,0.197113,0.004029761,0.0005355204,0.01115091],"study_design_scores_gemma":[0.0001372689,0.0004295918,0.006398336,0.00002292563,0.00009986837,0.00009266454,0.0001936649,0.8608323,0.1288041,0.001635027,0.001291412,0.00006289603],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9953839,0.0002183851,0.0008489738,0.00008790935,0.00001584942,0.000006373084,0.00009857735,0.00003174906,0.003308159],"genre_scores_gemma":[0.9993892,0.0001019422,0.0001578132,0.0000178202,0.000003415266,0.000003427381,0.00003774229,0.00001067537,0.0002778941],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.002826596,"threshold_uncertainty_score":0.007950664,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2321753895","doi":"10.1021/nl300476d","title":"Tuning the Surface Charge Properties of Epitaxial InN Nanowires","year":2012,"lang":"en","type":"article","venue":"Nano Letters","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":102,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"McGill University","funders":"","keywords":"Doping; Materials science; Nanowire; Fermi level; Epitaxy; Condensed matter physics; Surface states; Valence (chemistry); Effective mass (spring–mass system); Electron; Nanotechnology; Optoelectronics; Chemistry; Surface (topology); Physics","authors":[{"name":"Songrui Zhao","is_ca":true},{"name":"Saeed Fathololoumi","is_ca":true},{"name":"Kirk H. Bevan","is_ca":true},{"name":"D. P. Liu","is_ca":true},{"name":"Md Golam Kibria","is_ca":true},{"name":"Q. Li","is_ca":false},{"name":"George T. Wang","is_ca":false},{"name":"Hong Guo","is_ca":true},{"name":"Zetian Mi","is_ca":true}],"retraction":null,"screen_n_in":null,"score":{"opus":0.02184058460423709,"gpt":0.2235849050080835,"spread":0.2017443204038464,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"metacan-v3-hybrid-931329e0061c","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0001309018,0.0002088196,0.0001876113,0.00009142833,0.0001207576,0.0003951389,0.0002023041,0.0001466346,0.0004124056],"category_scores_gemma":[0.0003242806,0.0001472276,0.00008251659,0.0001178587,0.0001340505,0.0002260166,0.0001387448,0.0001635887,0.0001044738],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.0002095132,"about_ca_system_score_gemma":0.00008258154,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.000504012,"about_ca_topic_score_gemma":0.001179062,"domain_scores_codex":[0.9998965,0.000008205144,0.000007473498,0.00002118741,0.00004359434,0.00002292262],"domain_scores_gemma":[0.9998738,0.00003984295,0.00003396608,0.00001262704,0.00002728785,0.00001253292],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.00002775603,0.000009841187,0.0005012125,0.00001902386,0.000003459501,0.00002782918,0.0000130957,0.0002877764,0.9982539,0.00009184118,0.00001724123,0.0007470602],"study_design_scores_gemma":[0.000008659411,0.00008661934,0.0041434,0.000003209793,0.000007512278,0.00003522655,0.00002386307,0.004738877,0.9905496,0.00004309565,0.0003543869,0.000005518048],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9988186,0.00009348446,0.0003418626,0.00001460131,0.000005495377,0.000002761987,0.00003937207,0.00001097481,0.0006728029],"genre_scores_gemma":[0.9987948,0.00009631704,0.0006732541,0.000008638848,0.0000035321,0.000004276768,0.00006040728,0.0000125913,0.000346161],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.000504012,"threshold_uncertainty_score":0.001520097,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2611276947","doi":"10.1021/acs.nanolett.7b01068","title":"AlN/h-BN Heterostructures for Mg Dopant-Free Deep Ultraviolet Photonics","year":2017,"lang":"en","type":"article","venue":"Nano Letters","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":101,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":true,"ca_fund":true,"ca_venue":false,"about_ca":false},"ca_institutions":"McMaster University; McGill University","funders":"Army Research Office; Natural Sciences and Engineering Research Council of Canada; Government of Canada","keywords":"Materials science; Optoelectronics; Light-emitting diode; Dopant; Heterojunction; Ultraviolet; Doping; Boron nitride; Diode; Nanowire; Wide-bandgap semiconductor; Electrode; Nanotechnology; Chemistry","authors":[{"name":"David Laleyan","is_ca":true},{"name":"Songrui Zhao","is_ca":true},{"name":"Steffi Y. Woo","is_ca":true},{"name":"Hong Nhung Tran","is_ca":true},{"name":"Huy Le","is_ca":true},{"name":"Thomas Szkopek","is_ca":true},{"name":"Hong Guo","is_ca":true},{"name":"Gianluigi A. Botton","is_ca":true},{"name":"Zetian Mi","is_ca":true}],"retraction":null,"screen_n_in":null,"score":{"opus":0.01328434898896452,"gpt":0.2556271836465452,"spread":0.2423428346575807,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"metacan-v3-hybrid-931329e0061c","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0001016167,0.0002147507,0.00008318204,0.00009201083,0.0001489028,0.0001404419,0.0002287441,0.0001494084,0.001218062],"category_scores_gemma":[0.00005627333,0.00009878617,0.00006546071,0.00007413037,0.00007016436,0.0002519526,0.000151313,0.0002187579,0.0004514671],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.0003225835,"about_ca_system_score_gemma":0.00009663245,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.0006340109,"about_ca_topic_score_gemma":0.002682329,"domain_scores_codex":[0.9999655,0.000004266903,0.000001535966,0.000005987354,0.0000175123,0.000005075168],"domain_scores_gemma":[0.9999743,0.00000344296,0.000006071848,0.000003656281,0.00000684251,0.000005805966],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.00001459267,0.00001133279,0.00008203829,0.00004698513,0.000002615215,0.00002271424,0.000009191538,0.0001561659,0.9963749,0.0007966149,0.000156638,0.002326168],"study_design_scores_gemma":[0.00001025793,0.0000590708,0.0009431393,0.00001166413,0.000005552758,0.00008832315,0.00001564995,0.005563761,0.9867822,0.0003341078,0.006179864,0.000006531719],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9319711,0.008268337,0.03893786,0.0003930051,0.0003092573,0.00008526527,0.000745688,0.0004866465,0.01880288],"genre_scores_gemma":[0.9763119,0.001441509,0.01880931,0.00004464734,0.00001462842,0.00002766322,0.0001691516,0.00002834241,0.003152903],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.001218062,"threshold_uncertainty_score":0.004074812,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2416970256","doi":"10.1021/acs.nanolett.5b02133","title":"Three-Dimensional Quantum Confinement of Charge Carriers in Self-Organized AlGaN Nanowires: A Viable Route to Electrically Injected Deep Ultraviolet Lasers","year":2015,"lang":"en","type":"article","venue":"Nano Letters","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":99,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":true,"ca_fund":true,"ca_venue":false,"about_ca":false},"ca_institutions":"McMaster University; McGill University","funders":"Army Research Office; Natural Sciences and Engineering Research Council of Canada","keywords":"Optoelectronics; Nanowire; Ultraviolet; Charge carrier; Quantum dot; Materials science; Laser; Nanotechnology; Optics; Physics","authors":[{"name":"Songrui Zhao","is_ca":true},{"name":"Steffi Y. Woo","is_ca":true},{"name":"Matthieu Bugnet","is_ca":true},{"name":"Xiao Liu","is_ca":true},{"name":"Junjie Kang","is_ca":true},{"name":"G. A. Botton","is_ca":true},{"name":"Zetian Mi","is_ca":true}],"retraction":null,"screen_n_in":null,"score":{"opus":0.00989911823521255,"gpt":0.2227248144296279,"spread":0.2128256961944153,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"metacan-v3-hybrid-931329e0061c","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00006087379,0.0001646939,0.0001116497,0.00008393343,0.0001010774,0.0002825826,0.0003116912,0.0001592995,0.0002771808],"category_scores_gemma":[0.00009242387,0.0001144516,0.000107701,0.00007099665,0.0002499138,0.000238617,0.0002049539,0.00019925,0.0001000675],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.0001382079,"about_ca_system_score_gemma":0.0001121838,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.0001621455,"about_ca_topic_score_gemma":0.0005034512,"domain_scores_codex":[0.9999546,0.00000593579,0.000002361493,0.000009786016,0.00002026279,0.00000709179],"domain_scores_gemma":[0.9999036,0.00001900579,0.00004257162,0.00001108609,0.00001362257,0.00001015508],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.000007653937,0.00001316894,0.000145129,0.0000153861,0.000002633449,0.00003212358,0.00002178184,0.0002711168,0.9974211,0.000591136,0.00001679889,0.001462037],"study_design_scores_gemma":[0.000007122356,0.0001103524,0.0006801193,0.000002630529,0.000005216575,0.00007009384,0.00002078422,0.00511671,0.9925096,0.0002234088,0.001248143,0.000005858166],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9892898,0.0003770844,0.009129787,0.00005913056,0.00001783804,0.000009855751,0.00002444604,0.00005797647,0.001034043],"genre_scores_gemma":[0.9890659,0.0002123613,0.009772371,0.00001600175,0.000009466878,0.00001479457,0.00002419726,0.00001326625,0.0008716426],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.0003116912,"threshold_uncertainty_score":0.001002789,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2061080367","doi":"10.1063/1.2193469","title":"Potential performance of indium-nitride-based devices","year":2006,"lang":"en","type":"article","venue":"Applied Physics Letters","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":96,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"University of Regina","funders":"","keywords":"Indium; Indium nitride; Nitride; Optoelectronics; Materials science; Wurtzite crystal structure; Electric field; Wide-bandgap semiconductor; Engineering physics; Nanotechnology; Physics; Metallurgy; Quantum mechanics","authors":[{"name":"Stephen K. O’Leary","is_ca":true},{"name":"B. E. Foutz","is_ca":false},{"name":"M. S. Shur","is_ca":false},{"name":"L.F. Eastman","is_ca":false}],"retraction":null,"screen_n_in":null,"score":{"opus":0.006195254002516786,"gpt":0.1955664004313228,"spread":0.189371146428806,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"metacan-v3-hybrid-931329e0061c","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000302879,0.0003265472,0.0004158478,0.0002296764,0.0002980934,0.0006536552,0.0007417504,0.0006651294,0.002162599],"category_scores_gemma":[0.0005903569,0.0001182973,0.0001290846,0.000234862,0.0002609553,0.0007306053,0.0003152024,0.0001928725,0.0005622858],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.0006305129,"about_ca_system_score_gemma":0.000187587,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.0006418463,"about_ca_topic_score_gemma":0.0007013124,"domain_scores_codex":[0.9998435,0.00001976027,0.000006519467,0.00003421062,0.00004526089,0.00005069173],"domain_scores_gemma":[0.9997941,0.00007299116,0.00002003264,0.00001913289,0.00005935146,0.00003448239],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.0009981212,0.000085206,0.00207294,0.0001600604,0.00004367329,0.0001921634,0.00009036183,0.006721349,0.9801728,0.002874751,0.0002704692,0.006318119],"study_design_scores_gemma":[0.0001208885,0.001422532,0.005119628,0.00005063629,0.00008650048,0.0002856075,0.0001190507,0.07183632,0.9165614,0.001584706,0.00276656,0.00004620958],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9946702,0.001085353,0.001106558,0.00009808819,0.00002349033,0.000007476064,0.00007544029,0.00007301227,0.002860533],"genre_scores_gemma":[0.9983417,0.0002298866,0.0006259273,0.00001498513,0.000007094809,0.000006461948,0.00007099469,0.000009174773,0.0006937064],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.002162599,"threshold_uncertainty_score":0.007234633,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W3108257971","doi":"10.1002/adfm.202008452","title":"Sec‐Eliminating the SARS‐CoV‐2 by AlGaN Based High Power Deep Ultraviolet Light Source","year":2020,"lang":"en","type":"article","venue":"Advanced Functional Materials","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":95,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"Ministry of Education and Child Care","funders":"National Natural Science Foundation of China","keywords":"Materials science; Ultraviolet; Severe acute respiratory syndrome coronavirus 2 (SARS-CoV-2); Coronavirus disease 2019 (COVID-19); Optoelectronics; Power (physics); Ultraviolet a; Light source; Ultraviolet light; 2019-20 coronavirus outbreak; Virology; Optics; Biology; Physics","authors":[{"name":"Shangfeng Liu","is_ca":true},{"name":"Wei Luo","is_ca":false},{"name":"Dan Li","is_ca":true},{"name":"Ye Yuan","is_ca":false},{"name":"Wei Tong","is_ca":false},{"name":"Junjie Kang","is_ca":false},{"name":"Yixin Wang","is_ca":true},{"name":"Duo Li","is_ca":true},{"name":"Xin Rong","is_ca":true},{"name":"Tao Wang","is_ca":true},{"name":"Zhaoying Chen","is_ca":true},{"name":"Yongde Li","is_ca":false},{"name":"Houjin Wang","is_ca":false},{"name":"Weiyun Wang","is_ca":false},{"name":"Jason Hoo","is_ca":false},{"name":"Long Yan","is_ca":false},{"name":"Shiping Guo","is_ca":false},{"name":"Bo Shen","is_ca":true},{"name":"Zhe Cong","is_ca":false},{"name":"Xinqiang Wang","is_ca":true}],"retraction":null,"screen_n_in":null,"score":{"opus":0.00989299715267852,"gpt":0.2169437300788586,"spread":0.2070507329261801,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"metacan-v3-hybrid-931329e0061c","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0000659217,0.0002340798,0.0001012376,0.0000960523,0.00008025183,0.0001767954,0.0001791642,0.0001919195,0.001229311],"category_scores_gemma":[0.00006638993,0.00009321968,0.0001681248,0.00007513728,0.0001310968,0.0001457871,0.0001640673,0.0002000188,0.0003195403],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.0001386905,"about_ca_system_score_gemma":0.000133829,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.0003733175,"about_ca_topic_score_gemma":0.0005946292,"domain_scores_codex":[0.9999466,0.000004744511,0.000002119684,0.00001240935,0.00002212979,0.00001197847],"domain_scores_gemma":[0.9999558,0.000005706784,0.00001519405,0.000006651982,0.00001065887,0.000006074434],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.00001225459,0.000007032901,0.000142987,0.0000226643,0.000001968283,0.00001758233,0.000009044204,0.00006722496,0.9982438,0.00007508998,0.00006282228,0.00133756],"study_design_scores_gemma":[0.000003456185,0.00006830791,0.000766081,0.000002024421,0.000003827619,0.0000558656,0.000008770854,0.001441009,0.9960168,0.00002446628,0.001606391,0.000003057146],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9828004,0.0006865931,0.01219071,0.00007569537,0.00004946474,0.0000187663,0.0001294885,0.0002251925,0.003823672],"genre_scores_gemma":[0.9839571,0.0003011315,0.01020539,0.00005639708,0.000008186275,0.00001441441,0.0001118641,0.0000409545,0.00530457],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.001229311,"threshold_uncertainty_score":0.004112482,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2034522069","doi":"10.1016/s0022-0248(99)00634-x","title":"Determination of tilt in the lateral epitaxial overgrowth of GaN using X-ray diffraction","year":2000,"lang":"en","type":"article","venue":"Journal of Crystal Growth","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":94,"is_retracted":false,"has_abstract":false,"routes":{"ca_aff":false,"ca_fund":true,"ca_venue":false,"about_ca":false},"ca_institutions":"","funders":"Office of Naval Research; Natural Sciences and Engineering Research Council of Canada; National Science Foundation","keywords":"Tilt (camera); Diffraction; Materials science; Epitaxy; Optics; Scanning electron microscope; Aspect ratio (aeronautics); Condensed matter physics; Crystallography; Layer (electronics); Optoelectronics; Chemistry; Geometry; Physics; Nanotechnology; Composite material; Mathematics","authors":[{"name":"P. Fini","is_ca":false},{"name":"H. Marchand","is_ca":false},{"name":"J. P. Ibbetson","is_ca":false},{"name":"Steven P. DenBaars","is_ca":false},{"name":"Umesh K. Mishra","is_ca":false},{"name":"James S. Speck","is_ca":false}],"retraction":null,"screen_n_in":null,"score":{"opus":0.01312355467278992,"gpt":0.2533832282656481,"spread":0.2402596735928582,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"metacan-v3-hybrid-931329e0061c","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000220912,0.000246127,0.0002316811,0.0003198945,0.0001990478,0.0006562506,0.00027514,0.0002875553,0.0006108045],"category_scores_gemma":[0.0006255604,0.000291895,0.000135219,0.0003344418,0.0003178262,0.0003063199,0.0002404692,0.000486625,0.0002116043],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.0005113666,"about_ca_system_score_gemma":0.0002868256,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.00255481,"about_ca_topic_score_gemma":0.004500328,"domain_scores_codex":[0.9998206,0.00001981481,0.00001202595,0.00003255481,0.00008088465,0.00003405334],"domain_scores_gemma":[0.9995918,0.0001079155,0.0001037117,0.00004997307,0.00011102,0.0000355935],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"observational","study_design_scores_codex":[0.0001803907,0.00001392468,0.007809992,0.00003602317,0.000007274976,0.00004554277,0.00004535124,0.000249869,0.9884146,0.0002288859,0.0000811092,0.00288701],"study_design_scores_gemma":[0.00001334443,0.0000720235,0.059089,0.00001021273,0.00001319168,0.0001647841,0.00008977747,0.005167372,0.9342009,0.00007678854,0.001088146,0.00001445197],"study_design_candidate":"observational","study_design_consensus":null,"genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9884762,0.001092154,0.007560839,0.00006322747,0.00003910772,0.00001374892,0.0004060481,0.00008296452,0.002265713],"genre_scores_gemma":[0.9947048,0.0004383018,0.003786897,0.00002713144,0.000005588316,0.000006845289,0.0003106492,0.00002321507,0.0006965684],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.00255481,"threshold_uncertainty_score":0.005079925,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W1540256684","doi":"10.1063/1.4927602","title":"An electrically injected AlGaN nanowire laser operating in the ultraviolet-C band","year":2015,"lang":"en","type":"article","venue":"Applied Physics Letters","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":93,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"McMaster University; McGill University","funders":"","keywords":"Nanowire; Materials science; Optoelectronics; Molecular beam epitaxy; Heterojunction; Wide-bandgap semiconductor; Substrate (aquarium); Laser; Ultraviolet; Epitaxy; Nanotechnology; Optics; Layer (electronics); Physics","authors":[{"name":"Songrui Zhao","is_ca":true},{"name":"Xiao Liu","is_ca":true},{"name":"Steffi Y. Woo","is_ca":true},{"name":"Junjie Kang","is_ca":true},{"name":"Gianluigi A. Botton","is_ca":true},{"name":"Zetian Mi","is_ca":true}],"retraction":null,"screen_n_in":null,"score":{"opus":0.01413358827699581,"gpt":0.2377019359558776,"spread":0.2235683476788818,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"metacan-v3-hybrid-931329e0061c","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0001307214,0.0001419829,0.0001216779,0.0000864411,0.000195516,0.0002303923,0.0003214074,0.0002400002,0.0007499573],"category_scores_gemma":[0.0002065412,0.00009163938,0.00009008054,0.0000899396,0.0002801522,0.0002548475,0.0001290189,0.0001868476,0.0001442694],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.0002365475,"about_ca_system_score_gemma":0.0002049463,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.0005883555,"about_ca_topic_score_gemma":0.001095989,"domain_scores_codex":[0.9999062,0.0000109491,0.000002705886,0.00001677928,0.0000451237,0.00001822024],"domain_scores_gemma":[0.9998345,0.00006844435,0.00002913024,0.00001488385,0.00003301679,0.00002006285],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.00004711601,0.00002686964,0.0006407573,0.00001508826,0.000003611884,0.00008848088,0.00002547571,0.00015804,0.9980989,0.00024759,0.00003104437,0.0006171011],"study_design_scores_gemma":[0.00002729943,0.0003174392,0.00337991,0.00000417855,0.0000104723,0.0001572672,0.00003037507,0.005407237,0.98973,0.0001372757,0.0007909782,0.000007665992],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9979503,0.00005560677,0.001191692,0.00002942023,0.000008915709,0.000007308707,0.00004133996,0.00003118119,0.0006842366],"genre_scores_gemma":[0.9968753,0.00005930792,0.002160605,0.0000117321,0.000004889139,0.0000110538,0.00004194942,0.000007925343,0.0008272724],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.0007499573,"threshold_uncertainty_score":0.002508819,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2268363440","doi":"10.1021/acs.nanolett.5b03040","title":"Surface Emitting, High Efficiency Near-Vacuum Ultraviolet Light Source with Aluminum Nitride Nanowires Monolithically Grown on Silicon","year":2015,"lang":"en","type":"article","venue":"Nano Letters","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":91,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":true,"ca_fund":true,"ca_venue":false,"about_ca":false},"ca_institutions":"McGill University","funders":"Army Research Office; Natural Sciences and Engineering Research Council of Canada","keywords":"Materials science; Light-emitting diode; Optoelectronics; Nanowire; Electroluminescence; Ultraviolet; Nitride; Molecular beam epitaxy; Light emission; Planar; Aluminium; Substrate (aquarium); Silicon; Epitaxy; Nanotechnology; Layer (electronics)","authors":[{"name":"Songrui Zhao","is_ca":true},{"name":"Mehrdad Djavid","is_ca":true},{"name":"Zetian Mi","is_ca":true}],"retraction":null,"screen_n_in":null,"score":{"opus":0.01022178271498891,"gpt":0.2180683391220928,"spread":0.2078465564071039,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"metacan-v3-hybrid-931329e0061c","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000102092,0.0002012673,0.000203299,0.0001551783,0.0000997092,0.0002675703,0.0003336558,0.0001718296,0.0004624515],"category_scores_gemma":[0.00009466542,0.0001425294,0.000151415,0.0001727993,0.0001504859,0.0002512266,0.000234424,0.0002056181,0.0002879345],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.0003276839,"about_ca_system_score_gemma":0.0001684658,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.0005031317,"about_ca_topic_score_gemma":0.001249747,"domain_scores_codex":[0.9999157,0.000006957071,0.000003240468,0.00002226212,0.00004219188,0.000009624749],"domain_scores_gemma":[0.9999511,0.000008744368,0.00001558986,0.000005431749,0.00001241433,0.000006740634],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.00001935383,0.00001765796,0.0003786115,0.00004020365,0.00000673073,0.00005087475,0.00002861107,0.0003294548,0.9958971,0.0003525016,0.0001285737,0.002750373],"study_design_scores_gemma":[0.00002266393,0.0001457462,0.002533865,0.000008495677,0.00001629518,0.0001223602,0.00003109591,0.01058726,0.9835767,0.0001195467,0.002822883,0.00001317756],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9833825,0.0004374335,0.0112552,0.00009029998,0.00002747679,0.00001848043,0.000151734,0.000250728,0.004386232],"genre_scores_gemma":[0.9814407,0.0002878068,0.01615843,0.00002751624,0.00001452614,0.00001632212,0.00009533099,0.00003099351,0.001928374],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.0005031317,"threshold_uncertainty_score":0.00237745,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2058198868","doi":"10.1063/1.2135876","title":"Steady-state and transient electron transport within bulk wurtzite indium nitride: An updated semiclassical three-valley Monte Carlo simulation analysis","year":2005,"lang":"en","type":"article","venue":"Applied Physics Letters","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":90,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"University of Regina","funders":"","keywords":"Wurtzite crystal structure; Monte Carlo method; Electron; Semiclassical physics; Physics; Kinetic Monte Carlo; Condensed matter physics; Statistical physics; Computational physics; Materials science; Quantum mechanics; Mathematics; Quantum","authors":[{"name":"Stephen K. O’Leary","is_ca":true},{"name":"B. E. Foutz","is_ca":false},{"name":"M. S. Shur","is_ca":false},{"name":"L.F. Eastman","is_ca":false}],"retraction":null,"screen_n_in":null,"score":{"opus":0.0101335070754778,"gpt":0.232722979198149,"spread":0.2225894721226712,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"metacan-v3-hybrid-931329e0061c","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0006407584,0.0002202381,0.0004873624,0.00033872,0.0004677407,0.0005765582,0.0006966611,0.0005137434,0.0006932918],"category_scores_gemma":[0.0008214556,0.0002072549,0.0006240853,0.0003700015,0.0005311982,0.0005423183,0.0002069715,0.0004871712,0.00007131115],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.001308635,"about_ca_system_score_gemma":0.001113397,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.01477587,"about_ca_topic_score_gemma":0.00913942,"domain_scores_codex":[0.9998751,0.00002586585,0.000006156488,0.00001454244,0.00004270427,0.00003563053],"domain_scores_gemma":[0.9995895,0.0002074117,0.00003629562,0.00004456665,0.0001017937,0.00002036786],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","study_design_scores_codex":[0.0000557426,0.00003566624,0.001895708,0.0000215258,0.00001833553,0.00007431243,0.00004047629,0.9812547,0.004718436,0.01025024,0.0001030343,0.001531834],"study_design_scores_gemma":[0.000004699502,0.00000832675,0.0002540087,0.000001712823,0.000003908811,0.000005609033,0.000004443729,0.9986248,0.000504276,0.0005434372,0.0000414421,0.000003379193],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9613633,0.0001320435,0.03407178,0.0001147091,0.00001330704,0.00002576344,0.0001153866,0.00007588887,0.004087896],"genre_scores_gemma":[0.9934263,0.00008384896,0.005635135,0.00002277868,0.000005583624,0.00003511187,0.00008930238,0.00002418759,0.0006778071],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.01477587,"threshold_uncertainty_score":0.02937973,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2263028563","doi":"10.1038/lsa.2016.30","title":"Electrically driven, phosphor-free, white light-emitting diodes using gallium nitride-based double concentric truncated pyramid structures","year":2016,"lang":"en","type":"article","venue":"Light Science & Applications","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":89,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"Institut interdisciplinaire d'innovation technologique; Université de Sherbrooke","funders":"Korea Advanced Institute of Science and Technology; Ministry of Knowledge Economy; National Research Foundation","keywords":"Phosphor; Light-emitting diode; Electroluminescence; Materials science; Cathodoluminescence; Optoelectronics; Gallium nitride; Luminous efficacy; Diode; Indium gallium nitride; Photoluminescence; Optics; Nitride; Luminescence; Nanotechnology; Layer (electronics); Physics","authors":[{"name":"Seung-Hyuk Lim","is_ca":false},{"name":"Young-Ho Ko","is_ca":false},{"name":"Christophe Rodriguez","is_ca":true},{"name":"Su‐Hyun Gong","is_ca":false}],"retraction":null,"screen_n_in":null,"score":{"opus":0.01344188422990457,"gpt":0.2583981318365786,"spread":0.2449562476066741,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"metacan-v3-hybrid-931329e0061c","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00005915713,0.0001664824,0.0001364325,0.00008760068,0.0001166299,0.0002742297,0.0004035052,0.0001576957,0.0003801399],"category_scores_gemma":[0.0001223667,0.0001762779,0.0002055873,0.0001159969,0.0001832804,0.0002629496,0.0002286109,0.0002174835,0.0001595368],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.0002859606,"about_ca_system_score_gemma":0.0001809982,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.0008092869,"about_ca_topic_score_gemma":0.001247612,"domain_scores_codex":[0.9999366,0.000004017675,0.000002909624,0.00001632731,0.00002922312,0.00001103168],"domain_scores_gemma":[0.9999347,0.000009854647,0.00002198872,0.000009870542,0.00001398113,0.000009710936],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.00001504898,0.0000119015,0.0001687489,0.00002946484,0.000005870838,0.00006578279,0.00001421774,0.0006495941,0.9969302,0.0002850912,0.00006399957,0.001760151],"study_design_scores_gemma":[0.00002239567,0.0001558152,0.002447654,0.00000445429,0.00001469282,0.0002866618,0.00002180867,0.01420685,0.9811196,0.0001733974,0.001529563,0.00001710024],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9819026,0.0002706862,0.01397671,0.00006253565,0.00002689915,0.0000261361,0.0001724088,0.0002638744,0.003298182],"genre_scores_gemma":[0.9828734,0.0002370773,0.01540986,0.00003698112,0.000004516993,0.00002123687,0.0001215111,0.00002152733,0.001273852],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.0008092869,"threshold_uncertainty_score":0.002074718,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2572177538","doi":"10.1063/1.4973999","title":"On the mechanism of highly efficient p-type conduction of Mg-doped ultra-wide-bandgap AlN nanostructures","year":2017,"lang":"en","type":"article","venue":"Applied Physics Letters","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":87,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":true,"ca_fund":true,"ca_venue":false,"about_ca":false},"ca_institutions":"McGill University","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Materials science; Doping; Dopant; Band gap; Impurity; Thermal conduction; Nanowire; Electron mobility; Wide-bandgap semiconductor; Optoelectronics; Electrical resistivity and conductivity; Condensed matter physics; Conduction band; Nanostructure; Conductivity; Nanotechnology; Chemistry; Electron","authors":[{"name":"Nhung Hong Tran","is_ca":true},{"name":"Binh Huy Le","is_ca":true},{"name":"Songrui Zhao","is_ca":true},{"name":"Zetian Mi","is_ca":true}],"retraction":null,"screen_n_in":null,"score":{"opus":0.01505036915868572,"gpt":0.2282668195803451,"spread":0.2132164504216594,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"metacan-v3-hybrid-931329e0061c","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0001411629,0.0002417009,0.0001562813,0.0001446235,0.0001913275,0.0002968736,0.0004008181,0.0002920033,0.0004305249],"category_scores_gemma":[0.0001373922,0.000128308,0.0001562457,0.00007558118,0.0003886088,0.0004595428,0.0001755637,0.0002572911,0.0002032174],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.0003016838,"about_ca_system_score_gemma":0.0001169982,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.000396846,"about_ca_topic_score_gemma":0.0004381168,"domain_scores_codex":[0.9999264,0.000008324979,0.000004195534,0.00002560462,0.00002220511,0.0000132559],"domain_scores_gemma":[0.999915,0.00003223389,0.00002086554,0.00001152612,0.0000142438,0.000006128218],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.00005148316,0.000009821162,0.0004090593,0.00005890467,0.000005155055,0.0001145608,0.00005006617,0.0002276089,0.9967462,0.0008578188,0.00002813194,0.001441302],"study_design_scores_gemma":[0.000007977725,0.00005213638,0.00199654,0.000006423623,0.000005418268,0.000134818,0.00002044597,0.004322443,0.9925095,0.0004021004,0.0005369661,0.000005231286],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9897164,0.001071793,0.006969004,0.00006857362,0.00002068173,0.00002520881,0.00009037666,0.00005767559,0.001980319],"genre_scores_gemma":[0.9976277,0.0002352794,0.001475086,0.00001297332,0.000005101263,0.00001141829,0.00002858678,0.000006846305,0.0005970545],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.0004305249,"threshold_uncertainty_score":0.002188921,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2549339549","doi":"10.1063/1.4967180","title":"An electrically pumped 239 nm AlGaN nanowire laser operating at room temperature","year":2016,"lang":"en","type":"article","venue":"Applied Physics Letters","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":85,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"McGill University","funders":"","keywords":"Nanowire; Materials science; Optoelectronics; Molecular beam epitaxy; Laser; Atmospheric temperature range; Substrate (aquarium); Wide-bandgap semiconductor; Wavelength; Ultraviolet; Scattering; Spontaneous emission; Epitaxy; Optics; Nanotechnology; Layer (electronics)","authors":[{"name":"Songrui Zhao","is_ca":true},{"name":"X. Liu","is_ca":true},{"name":"Yuanpeng Wu","is_ca":true},{"name":"Zetian Mi","is_ca":true}],"retraction":null,"screen_n_in":null,"score":{"opus":0.006738284205510927,"gpt":0.2139664878364543,"spread":0.2072282036309434,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"metacan-v3-hybrid-931329e0061c","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000113311,0.0001472166,0.0001650903,0.00007641554,0.0002650713,0.000258139,0.000494772,0.0003001658,0.001310257],"category_scores_gemma":[0.000211394,0.0001182381,0.000137546,0.00008052697,0.0003593737,0.0003733677,0.0002583143,0.0003106807,0.0003411067],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.0002445329,"about_ca_system_score_gemma":0.0002290153,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.0002293903,"about_ca_topic_score_gemma":0.0003985904,"domain_scores_codex":[0.9998815,0.0000092893,0.000003951203,0.00003100964,0.00005832901,0.00001598924],"domain_scores_gemma":[0.9998409,0.00005674396,0.0000397515,0.00001794251,0.00002799942,0.00001658828],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.00002839936,0.00001027171,0.0002199671,0.00001915148,0.000002464605,0.000100165,0.0000320737,0.00007079377,0.9984363,0.0002523591,0.00002935035,0.0007986468],"study_design_scores_gemma":[0.00001080695,0.0001175377,0.00144928,0.000003725951,0.00000610111,0.0002365433,0.00002634115,0.002429279,0.9945241,0.0001314466,0.001057062,0.000007847822],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9931432,0.000155099,0.004489011,0.000084006,0.00003637257,0.00001271782,0.00008446172,0.00009003809,0.001905061],"genre_scores_gemma":[0.9926057,0.0001203438,0.005100207,0.00002551883,0.00001434516,0.00002413232,0.00005388782,0.00002560219,0.002030215],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.001310257,"threshold_uncertainty_score":0.004383266,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2014148571","doi":"10.1039/c3nr00387f","title":"Growth of large-scale vertically aligned GaN nanowires and their heterostructures with high uniformity on SiOx by catalyst-free molecular beam epitaxy","year":2013,"lang":"en","type":"article","venue":"Nanoscale","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":83,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"McGill University","funders":"","keywords":"Nanowire; Heterojunction; Materials science; Molecular beam epitaxy; Optoelectronics; Epitaxy; Nanoscopic scale; Nanotechnology; Layer (electronics)","authors":[{"name":"Songrui Zhao","is_ca":true},{"name":"Md Golam Kibria","is_ca":true},{"name":"Qi Wang","is_ca":true},{"name":"Hieu Pham Trung Nguyen","is_ca":true},{"name":"Zetian Mi","is_ca":true}],"retraction":null,"screen_n_in":null,"score":{"opus":0.003184964981147364,"gpt":0.1895287775818569,"spread":0.1863438126007096,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"metacan-v3-hybrid-931329e0061c","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00009517438,0.0002213826,0.0001591817,0.0001137397,0.0001088136,0.0002077753,0.0001819451,0.000140134,0.0003152241],"category_scores_gemma":[0.0001395952,0.0002068613,0.0001375971,0.0001222235,0.0001176472,0.0001708022,0.000143542,0.0001859651,0.0001482878],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.0002645807,"about_ca_system_score_gemma":0.0001701267,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.0008651554,"about_ca_topic_score_gemma":0.002858353,"domain_scores_codex":[0.9999253,0.00000567207,0.000005651508,0.00001972461,0.00003055406,0.00001318157],"domain_scores_gemma":[0.9999318,0.00001357057,0.00002047242,0.0000122233,0.00001148525,0.00001042264],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.000005774631,0.000004240488,0.0000956959,0.00001317156,0.000001895896,0.00001965372,0.000008511438,0.0001304311,0.9991424,0.00007380644,0.00001350041,0.0004909614],"study_design_scores_gemma":[0.000009402854,0.00007960454,0.003118112,0.000002588212,0.000005190382,0.00006545668,0.00001114569,0.002516774,0.9933067,0.00003636357,0.0008451688,0.000003445072],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9931498,0.0003794688,0.004220916,0.00003226115,0.00002100416,0.00002517907,0.0002411958,0.00005664822,0.001873554],"genre_scores_gemma":[0.9896969,0.000408342,0.008145551,0.00001013677,0.0000095908,0.00002230953,0.0002463608,0.00003093492,0.001429983],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.0008651554,"threshold_uncertainty_score":0.001919687,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2078593584","doi":"10.1016/j.jcrysgro.2015.04.009","title":"Structural and optical characterization of low-temperature ALD crystalline AlN","year":2015,"lang":"en","type":"article","venue":"Journal of Crystal Growth","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":83,"is_retracted":false,"has_abstract":false,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"University of Alberta","funders":"","keywords":"Refractive index; X-ray reflectivity; Materials science; Atomic layer deposition; Band gap; Ellipsometry; Sapphire; X-ray photoelectron spectroscopy; Silicon; Thin film; Analytical Chemistry (journal); Optoelectronics; Optics; Chemistry; Nanotechnology; Laser; Chemical engineering","authors":[{"name":"Pouyan Motamedi","is_ca":true},{"name":"Ken Cadien","is_ca":true}],"retraction":null,"screen_n_in":null,"score":{"opus":0.01120316160267153,"gpt":0.230442054294554,"spread":0.2192388926918825,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"metacan-v3-hybrid-931329e0061c","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0001197098,0.0001273365,0.0001152237,0.0001810514,0.0001891329,0.0002742224,0.0002438491,0.0001896447,0.001255551],"category_scores_gemma":[0.000219072,0.0001140445,0.000101368,0.0001736915,0.0002090925,0.0002187212,0.00008754665,0.0001536665,0.0001577202],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.0003873136,"about_ca_system_score_gemma":0.0001971899,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.002356367,"about_ca_topic_score_gemma":0.005035213,"domain_scores_codex":[0.9999017,0.000004719082,0.000003711639,0.00002407764,0.00005045448,0.00001547967],"domain_scores_gemma":[0.9998627,0.00002507062,0.00003234826,0.00001643552,0.0000506439,0.00001288605],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.00005056885,0.00001066516,0.0008384538,0.0000261871,0.000003363291,0.00002880914,0.00003593375,0.0001314347,0.9977404,0.00009895972,0.00006397167,0.000971371],"study_design_scores_gemma":[0.000007812071,0.0001160059,0.01938342,0.000003990247,0.00001062184,0.0001079647,0.00009791353,0.002944902,0.9755676,0.00004066832,0.001710465,0.000008742541],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9971135,0.0001750676,0.0007163428,0.00002398423,0.00001112718,0.000006885056,0.0002559135,0.00002928364,0.001667935],"genre_scores_gemma":[0.9970788,0.00007084061,0.0009302267,0.00001680319,0.000003292304,0.000006201032,0.0002304584,0.00001111636,0.001652281],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.002356367,"threshold_uncertainty_score":0.004685283,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2411413915","doi":"10.1021/acs.nanolett.5b02634","title":"Si Donor Incorporation in GaN Nanowires","year":2015,"lang":"en","type":"article","venue":"Nano Letters","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":82,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"Optina Diagnostics (Canada)","funders":"","keywords":"Nanowire; Materials science; Nanotechnology; Gallium nitride; Optoelectronics; Layer (electronics)","authors":[{"name":"Zhihua Fang","is_ca":false},{"name":"Éric Robin","is_ca":false},{"name":"Elena Rozas","is_ca":false},{"name":"A. Cros","is_ca":false},{"name":"Fabrice Donatini","is_ca":true},{"name":"Nicolas Mollard","is_ca":false},{"name":"Julien Pernot","is_ca":false},{"name":"B. Daudin","is_ca":false}],"retraction":null,"screen_n_in":null,"score":{"opus":0.0213289930504161,"gpt":0.2410703538166379,"spread":0.2197413607662218,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"metacan-v3-hybrid-931329e0061c","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0000907431,0.0001674411,0.0002041214,0.00009275487,0.0001019781,0.0003677713,0.000203192,0.0001440482,0.0006876807],"category_scores_gemma":[0.0001564019,0.0001596439,0.00009305785,0.0001096798,0.00008780239,0.0001799643,0.0001693131,0.0001685158,0.0002498735],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.0002877084,"about_ca_system_score_gemma":0.0001009639,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.0005351132,"about_ca_topic_score_gemma":0.0009092825,"domain_scores_codex":[0.9999144,0.000009685896,0.000006028995,0.00003014374,0.00002474996,0.00001487727],"domain_scores_gemma":[0.9999402,0.00001399466,0.00001740698,0.000008356177,0.00001225738,0.000007778541],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.00004533145,0.00001141126,0.0005927556,0.00004651957,0.000005317616,0.00006077697,0.00001433185,0.0001545944,0.9972459,0.0001668682,0.00003877907,0.001617427],"study_design_scores_gemma":[0.000005122931,0.00008242758,0.002289549,0.000005620673,0.00001114964,0.0001201293,0.00001696791,0.001667302,0.994591,0.00006153579,0.001145805,0.000003464963],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9946898,0.0008739556,0.001397495,0.0000363693,0.00001966187,0.000008270078,0.0002092246,0.0000381035,0.002727124],"genre_scores_gemma":[0.9954934,0.0005212058,0.00191188,0.00002393585,0.000004914642,0.00001192604,0.0002202425,0.00002486271,0.001787523],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.0006876807,"threshold_uncertainty_score":0.00230056,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2167968347","doi":"10.1088/0957-4484/23/19/194012","title":"Temperature-dependent nonradiative recombination processes in GaN-based nanowire white-light-emitting diodes on silicon","year":2012,"lang":"en","type":"article","venue":"Nanotechnology","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":82,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"McGill University","funders":"","keywords":"Materials science; Auger effect; Optoelectronics; Diode; Nanowire; Heterojunction; Light-emitting diode; Silicon; Atmospheric temperature range; Spontaneous emission; Indium gallium nitride; Wide-bandgap semiconductor; Gallium nitride; Layer (electronics); Auger; Optics; Nanotechnology; Atomic physics; Physics","authors":[{"name":"Hieu Pham Trung Nguyen","is_ca":true},{"name":"Mehrdad Djavid","is_ca":true},{"name":"Kai Cui","is_ca":true},{"name":"Zetian Mi","is_ca":true}],"retraction":null,"screen_n_in":null,"score":{"opus":0.01103328032922117,"gpt":0.2461920361724333,"spread":0.2351587558432121,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"metacan-v3-hybrid-931329e0061c","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0002262755,0.0002037509,0.0002493794,0.00009183884,0.0001181523,0.0002843498,0.0003302834,0.0001686693,0.0004654803],"category_scores_gemma":[0.0002770575,0.0001252002,0.0002640946,0.0001076658,0.0001667618,0.0004012042,0.00013188,0.0002249884,0.0001788071],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.0002862626,"about_ca_system_score_gemma":0.0001154935,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.0005413858,"about_ca_topic_score_gemma":0.0009388376,"domain_scores_codex":[0.9998631,0.00002450592,0.000007401406,0.00003019798,0.00005072866,0.00002397836],"domain_scores_gemma":[0.9998579,0.00005872885,0.00003604424,0.00001644162,0.00002420283,0.000006767127],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.00007085344,0.00002710838,0.0007957019,0.00007443081,0.00001224266,0.00008197827,0.00008519596,0.001605175,0.9950109,0.0003597945,0.0000216297,0.001855161],"study_design_scores_gemma":[0.000006427177,0.0001247033,0.002762021,0.00000423495,0.00001310826,0.0001476473,0.00002836777,0.007577368,0.9888022,0.00008497951,0.0004416727,0.000007198556],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9957032,0.0006157732,0.002926909,0.00001378343,0.00000470006,0.000009939113,0.00003353005,0.00002349101,0.0006686494],"genre_scores_gemma":[0.9964156,0.0004091881,0.002332605,0.000008314861,0.000003167142,0.000007516817,0.00007405395,0.00001767144,0.0007317811],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.0005413858,"threshold_uncertainty_score":0.002077043,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2039717835","doi":"10.1088/0957-4484/20/34/345203","title":"Molecular beam epitaxial growth and characterization of non-tapered InN nanowires on Si(111)","year":2009,"lang":"en","type":"article","venue":"Nanotechnology","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":81,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"McGill University","funders":"University of Michigan","keywords":"Materials science; Nanowire; Molecular beam epitaxy; Epitaxy; Characterization (materials science); Stacking; Optoelectronics; Stacking fault; Homogeneous; Spectroscopy; Range (aeronautics); Layer (electronics); Crystallography; Nanotechnology; Dislocation; Nuclear magnetic resonance; Composite material","authors":[{"name":"Yi-Lu Chang","is_ca":true},{"name":"Feng Li","is_ca":true},{"name":"A. Fatehi","is_ca":true},{"name":"Zetian Mi","is_ca":true}],"retraction":null,"screen_n_in":null,"score":{"opus":0.005173490717023066,"gpt":0.2156824469283109,"spread":0.2105089562112879,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"metacan-v3-hybrid-931329e0061c","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0001190677,0.0001606625,0.0001679944,0.00008654667,0.0000908037,0.0001431509,0.0002162606,0.0001146423,0.00034649],"category_scores_gemma":[0.0001453619,0.0001224237,0.00008885263,0.0001438761,0.0001087602,0.0001396991,0.0001237738,0.0001537773,0.000104491],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.0001418439,"about_ca_system_score_gemma":0.00007209012,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.0007077526,"about_ca_topic_score_gemma":0.001927304,"domain_scores_codex":[0.9999003,0.000009715623,0.000008423484,0.00002400502,0.00004371191,0.00001374378],"domain_scores_gemma":[0.9998834,0.00002281562,0.00004327474,0.00002045714,0.00001825981,0.00001176598],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.00001092578,0.000006637268,0.0003494787,0.00002037608,0.000001892323,0.0000477927,0.00001922142,0.0001080911,0.9988787,0.00003775519,0.000007529392,0.0005115659],"study_design_scores_gemma":[0.000003751004,0.0001018136,0.007080198,0.00000317877,0.000006178796,0.0001162514,0.00002555255,0.001546719,0.9904571,0.00001736309,0.000638861,0.000003095708],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9974778,0.0002114036,0.001542403,0.00001027532,0.000004805678,0.00001206434,0.0001407264,0.00001507429,0.0005854105],"genre_scores_gemma":[0.9889443,0.000413994,0.00905836,0.00001024472,0.000003942843,0.00001847197,0.0003391504,0.00001330359,0.001198404],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.0007077526,"threshold_uncertainty_score":0.001407266,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2131926178","doi":"10.1109/jstqe.2010.2082505","title":"InN p-i-n Nanowire Solar Cells on Si","year":2010,"lang":"en","type":"article","venue":"IEEE Journal of Selected Topics in Quantum Electronics","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":75,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":true,"ca_fund":true,"ca_venue":false,"about_ca":false},"ca_institutions":"McGill University","funders":"McGill University","keywords":"Homojunction; Nanowire; Materials science; Passivation; Optoelectronics; Molecular beam epitaxy; Epitaxy; Doping; Photovoltaics; Solar cell; Energy conversion efficiency; Nanotechnology; Layer (electronics); Photovoltaic system","authors":[{"name":"Hieu Pham Trung Nguyen","is_ca":true},{"name":"Yi‐Lu Chang","is_ca":true},{"name":"I. Shih","is_ca":true},{"name":"Zetian Mi","is_ca":true}],"retraction":null,"screen_n_in":null,"score":{"opus":0.008851956075785494,"gpt":0.2423321935886398,"spread":0.2334802375128543,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"metacan-v3-hybrid-931329e0061c","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00005025459,0.00016347,0.0002029709,0.00005728764,0.0001524787,0.0002444527,0.0002954443,0.0001295017,0.002038102],"category_scores_gemma":[0.00009573517,0.00007098311,0.0000828197,0.0001297184,0.00005683724,0.0002340022,0.0001820959,0.0001834643,0.0006712183],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.0002156856,"about_ca_system_score_gemma":0.00008452071,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.000887821,"about_ca_topic_score_gemma":0.00377636,"domain_scores_codex":[0.9999391,0.000003733284,0.00000350257,0.00001682621,0.0000282436,0.000008672772],"domain_scores_gemma":[0.9999661,0.000006961664,0.000004841885,0.000006903892,0.00001119022,0.000003923584],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.00005121343,0.00003161204,0.0006702862,0.00008557509,0.0000103463,0.0001345201,0.00002055687,0.0006988263,0.9863725,0.0008034587,0.0008666627,0.01025434],"study_design_scores_gemma":[0.00001197585,0.0001241717,0.003250715,0.000008236506,0.00001282842,0.0001612234,0.0000259905,0.008277039,0.979258,0.0002211275,0.008642877,0.000005741164],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9545912,0.000891981,0.008557661,0.0001181559,0.000100923,0.00003341111,0.0008881824,0.0004273004,0.03439112],"genre_scores_gemma":[0.9804344,0.0008586049,0.01092218,0.0000604463,0.00001920127,0.00002188604,0.0006919164,0.0000411277,0.006950315],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.002038102,"threshold_uncertainty_score":0.006818116,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2511134212","doi":"10.1063/1.4961680","title":"Molecular beam epitaxy growth of Al-rich AlGaN nanowires for deep ultraviolet optoelectronics","year":2016,"lang":"en","type":"article","venue":"APL Materials","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":75,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"McMaster University; McGill University","funders":"","keywords":"Molecular beam epitaxy; Materials science; Nanowire; Optoelectronics; Ultraviolet; Light-emitting diode; Epitaxy; Substrate (aquarium); Ternary operation; Wavelength; Wide-bandgap semiconductor; Nanotechnology; Layer (electronics)","authors":[{"name":"Songrui Zhao","is_ca":true},{"name":"Steffi Y. Woo","is_ca":true},{"name":"Sharif Sadaf","is_ca":true},{"name":"Yuanpeng Wu","is_ca":true},{"name":"Alexandre Pofelski","is_ca":true},{"name":"David Laleyan","is_ca":true},{"name":"Roksana Tonny Rashid","is_ca":true},{"name":"Yongjie Wang","is_ca":true},{"name":"Gianluigi A. Botton","is_ca":true},{"name":"Zetian Mi","is_ca":true}],"retraction":null,"screen_n_in":null,"score":{"opus":0.006945448756264798,"gpt":0.2340234349597032,"spread":0.2270779862034384,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"metacan-v3-hybrid-931329e0061c","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00009365717,0.0001443493,0.0001027609,0.000125666,0.000126783,0.0001889956,0.0001911624,0.000143306,0.0005311078],"category_scores_gemma":[0.000097027,0.0001567315,0.00007463135,0.0001153673,0.00008061102,0.0001623079,0.0001390983,0.0002352145,0.000233774],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.0002611833,"about_ca_system_score_gemma":0.0001512542,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.0006533863,"about_ca_topic_score_gemma":0.001867065,"domain_scores_codex":[0.9999589,0.000005075454,0.000002633801,0.000009902366,0.00001676532,0.000006755572],"domain_scores_gemma":[0.9999719,0.000004911309,0.000009538608,0.000004532802,0.00000568318,0.0000034809],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.000009784501,0.000008964304,0.0001028178,0.00002357034,0.000002339853,0.00001261266,0.000007932531,0.0001816259,0.9978423,0.0004717463,0.00006930668,0.001266923],"study_design_scores_gemma":[0.00000951586,0.00003428025,0.0009057503,0.000003015846,0.000005604461,0.00003439929,0.0000059025,0.005254047,0.9910169,0.00007943625,0.002647943,0.000003249818],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9839617,0.001128159,0.009625735,0.0001524754,0.00004521251,0.00003527405,0.0002467732,0.000188798,0.004615956],"genre_scores_gemma":[0.9789894,0.0009281166,0.01632249,0.00003196777,0.00001143175,0.00004044922,0.0001551944,0.00003576023,0.003485157],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.0006533863,"threshold_uncertainty_score":0.00189507,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2554328459","doi":"10.1063/1.4967837","title":"Sub-milliwatt AlGaN nanowire tunnel junction deep ultraviolet light emitting diodes on silicon operating at 242 nm","year":2016,"lang":"en","type":"article","venue":"Applied Physics Letters","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":74,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"McGill University","funders":"Research, Development and Engineering Command","keywords":"Light-emitting diode; Optoelectronics; Materials science; Nanowire; Ultraviolet; Molecular beam epitaxy; Diode; Silicon; Substrate (aquarium); Wide-bandgap semiconductor; Tunnel junction; Quantum efficiency; Epitaxy; Nanotechnology; Quantum tunnelling; Layer (electronics)","authors":[{"name":"Songrui Zhao","is_ca":true},{"name":"Sharif Sadaf","is_ca":true},{"name":"Srinivas Vanka","is_ca":true},{"name":"Yongjie Wang","is_ca":true},{"name":"Roksana Tonny Rashid","is_ca":true},{"name":"Zetian Mi","is_ca":true}],"retraction":null,"screen_n_in":null,"score":{"opus":0.009258433661151096,"gpt":0.206575731537595,"spread":0.1973172978764439,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"metacan-v3-hybrid-931329e0061c","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00006863113,0.0001985746,0.0001665932,0.000105055,0.0001225972,0.0002351327,0.0002016943,0.0001383283,0.001437887],"category_scores_gemma":[0.000100793,0.00007271212,0.00009592324,0.0001509803,0.00009915793,0.0001793594,0.0001089339,0.0001314708,0.0002466718],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.0001720041,"about_ca_system_score_gemma":0.00008171319,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.0004910483,"about_ca_topic_score_gemma":0.001223924,"domain_scores_codex":[0.9999499,0.000004703795,0.000002129923,0.00001008533,0.00002116315,0.00001196486],"domain_scores_gemma":[0.9999406,0.00002161735,0.0000107415,0.00000611026,0.00001307085,0.00000778457],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.00005473955,0.00001517991,0.000628452,0.00003642836,0.000006448121,0.00006683627,0.00001792459,0.0003142536,0.9973897,0.0001055168,0.00008232078,0.001282203],"study_design_scores_gemma":[0.000009857396,0.0001957449,0.005146883,0.00000310304,0.00001378647,0.00009818259,0.00002074057,0.003687262,0.9893399,0.00007863955,0.001399871,0.000005977149],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9970983,0.000223621,0.001272677,0.0000144116,0.000009880106,0.000003653294,0.0001083381,0.00006081691,0.001208224],"genre_scores_gemma":[0.9963574,0.0002217478,0.001536622,0.000007841441,0.000007890164,0.000008665565,0.0001143288,0.00001429452,0.001731269],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.001437887,"threshold_uncertainty_score":0.004810154,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2594236174","doi":"10.1038/srep42973","title":"High Operating Temperature and Low Power Consumption Boron Nitride Nanosheets Based Broadband UV Photodetector","year":2017,"lang":"en","type":"article","venue":"Scientific Reports","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":73,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":false,"ca_fund":true,"ca_venue":false,"about_ca":false},"ca_institutions":"","funders":"Army Research Office; Institute of Population and Public Health; King Saud University; U.S. Department of Defense","keywords":"Broadband; Photodetector; Boron nitride; Power consumption; Materials science; Optoelectronics; Boron; Ultraviolet; Power (physics); Telecommunications; Nanotechnology; Computer science; Chemistry; Physics","authors":[{"name":"Manuel Rivera","is_ca":false},{"name":"Rafael Velázquez","is_ca":false},{"name":"Ali Aldalbahi","is_ca":false},{"name":"Andrew F. Zhou","is_ca":false},{"name":"Peter Feng","is_ca":false}],"retraction":null,"screen_n_in":null,"score":{"opus":0.01064956309157025,"gpt":0.2447947302814807,"spread":0.2341451671899104,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"metacan-v3-hybrid-931329e0061c","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0001089549,0.0002184961,0.0002414968,0.0001719349,0.0001081929,0.0002441916,0.0003999227,0.0002700179,0.0005199713],"category_scores_gemma":[0.0001212932,0.0001371982,0.0001334679,0.000191937,0.0001320533,0.0003474849,0.0002179474,0.0002788957,0.0002298393],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.0002369023,"about_ca_system_score_gemma":0.0001349603,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.0003510132,"about_ca_topic_score_gemma":0.001012709,"domain_scores_codex":[0.9998761,0.000008352025,0.000005253539,0.00003607661,0.0000580064,0.00001612689],"domain_scores_gemma":[0.9999191,0.00001538276,0.00002062859,0.00001047954,0.0000235443,0.00001083914],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.00003227174,0.000009428656,0.0001947222,0.00003247603,0.000004121,0.00003675688,0.000009813289,0.0001855529,0.9970893,0.0001093274,0.00005620588,0.002239927],"study_design_scores_gemma":[0.000004918055,0.00005911059,0.0009304674,0.000002982723,0.000004495762,0.00009992168,0.000008485351,0.001961283,0.9958598,0.00003311329,0.001030445,0.000005095848],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.967106,0.001134511,0.02841926,0.0001148127,0.00005432261,0.00003608476,0.0004523066,0.0003009242,0.002381757],"genre_scores_gemma":[0.9714816,0.0006081135,0.02437935,0.00004041789,0.00001712717,0.00003960164,0.0002417661,0.00003431134,0.003157621],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.0005199713,"threshold_uncertainty_score":0.001739442,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2070761578","doi":"10.1063/1.3674984","title":"Structure and chemistry of the Si(111)/AlN interface","year":2012,"lang":"en","type":"article","venue":"Applied Physics Letters","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":73,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"McMaster University; Brockhouse Institute for Materials Research","funders":"Engineering and Physical Sciences Research Council","keywords":"Epitaxy; Amorphous solid; Materials science; Crystallography; Chemical physics; Chemistry; Nanotechnology; Layer (electronics)","authors":[{"name":"Guillaume Radtke","is_ca":false},{"name":"Martin Couillard","is_ca":true},{"name":"Gianluigi A. Botton","is_ca":true},{"name":"Dandan Zhu","is_ca":false},{"name":"C. J. Humphreys","is_ca":false}],"retraction":null,"screen_n_in":null,"score":{"opus":0.006935047139650195,"gpt":0.2087907648332209,"spread":0.2018557176935707,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"metacan-v3-hybrid-931329e0061c","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00006415947,0.0001720023,0.0001420765,0.0001340391,0.0002406479,0.0003453432,0.0002728561,0.0002794909,0.001391135],"category_scores_gemma":[0.00009206936,0.0001538966,0.00008639536,0.0001133578,0.000297314,0.0002280529,0.0001402983,0.0002165668,0.0002079775],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.0004400761,"about_ca_system_score_gemma":0.0001910983,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.001592404,"about_ca_topic_score_gemma":0.001692966,"domain_scores_codex":[0.9999434,0.000003627532,0.000002270277,0.00001377618,0.00002231456,0.00001470461],"domain_scores_gemma":[0.9999692,0.00000670468,0.00001026599,0.000002192636,0.000006592517,0.000005089087],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.00008196463,0.00002074744,0.002202198,0.0000630701,0.000004450927,0.0001497227,0.00005310417,0.001005566,0.9941094,0.0008119004,0.00005508794,0.001442739],"study_design_scores_gemma":[0.00002899566,0.0002241029,0.01935612,0.00000839124,0.00001565073,0.0003106272,0.0001925286,0.0161972,0.961188,0.000517619,0.001948796,0.00001197613],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.997094,0.0002579899,0.0005196739,0.00003182593,0.000004840536,0.000006476871,0.0000994746,0.00001414908,0.001971448],"genre_scores_gemma":[0.9984943,0.0001384482,0.0008405818,0.0000118062,0.000002089323,0.000005343807,0.0001189559,0.000002872898,0.0003856937],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.001592404,"threshold_uncertainty_score":0.004653811,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2072969029","doi":"10.1063/1.1846143","title":"Blue-violet InGaN laser diodes grown on bulk GaN substrates by plasma-assisted molecular-beam epitaxy","year":2004,"lang":"en","type":"article","venue":"Applied Physics Letters","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":70,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"Institute for Microstructural Sciences","funders":"","keywords":"Molecular beam epitaxy; Materials science; Optoelectronics; Diode; Laser; Epitaxy; Plasma; Optics; Layer (electronics); Nanotechnology","authors":[{"name":"C. Skierbiszewski","is_ca":false},{"name":"Z. R. Wasilewski","is_ca":true},{"name":"M. Siekacz","is_ca":false},{"name":"A. Feduniewicz","is_ca":false},{"name":"P. Perlin","is_ca":false},{"name":"P. Wiśniewski","is_ca":false},{"name":"J. Borysiuk","is_ca":false},{"name":"I. Grzegory","is_ca":false},{"name":"M. Leszczyński","is_ca":false},{"name":"T. Suski","is_ca":false},{"name":"S. Porowski","is_ca":false}],"retraction":null,"screen_n_in":null,"score":{"opus":0.009476649984603115,"gpt":0.2121253138620354,"spread":0.2026486638774323,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"metacan-v3-hybrid-931329e0061c","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0000819262,0.0001873229,0.0001657575,0.0001009138,0.0001192748,0.0002036538,0.0002761397,0.0001535974,0.0009867722],"category_scores_gemma":[0.00009109719,0.000205793,0.00009570624,0.0001004383,0.000128638,0.0001977608,0.0001540871,0.0002522719,0.0004288308],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.0001691862,"about_ca_system_score_gemma":0.0001114734,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.0003945019,"about_ca_topic_score_gemma":0.00124052,"domain_scores_codex":[0.9999169,0.000007763419,0.000002340928,0.00001377979,0.00004465584,0.00001445046],"domain_scores_gemma":[0.9999592,0.000008741703,0.00001060887,0.000008123142,0.000008416505,0.000004781081],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.00001362029,0.000003701648,0.00014702,0.0000243893,0.000001808704,0.00002538906,0.000007709366,0.0001001149,0.9983732,0.0001732849,0.00006673876,0.001063096],"study_design_scores_gemma":[0.00001129644,0.00006437356,0.002025916,0.000005030503,0.000005329267,0.0002340408,0.00001021334,0.00190591,0.9919728,0.0001296403,0.003630525,0.000004835989],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9908222,0.000873703,0.004362084,0.0001051174,0.00002248527,0.00001409807,0.0001773542,0.0001404744,0.003482502],"genre_scores_gemma":[0.977865,0.001210407,0.01660476,0.00003681556,0.00001543935,0.00002598983,0.0002649894,0.00003257475,0.003944057],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.0009867722,"threshold_uncertainty_score":0,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2097929344","doi":"10.1109/ted.2006.885663","title":"At-Bias Extraction of Access Parasitic Resistances in AlGaN/GaN HEMTs: Impact on Device Linearity and Channel Electron Velocity","year":2006,"lang":"en","type":"article","venue":"IEEE Transactions on Electron Devices","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":70,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"Simon Fraser University","funders":"","keywords":"Linearity; Biasing; Transistor; Channel (broadcasting); Physics; Topology (electrical circuits); Optoelectronics; Materials science; Analytical Chemistry (journal); Electrical engineering; Computer science; Chemistry; Voltage; Telecommunications; Engineering; Quantum mechanics","authors":[{"name":"D.W. DiSanto","is_ca":true},{"name":"C. R. Bolognesi","is_ca":true}],"retraction":null,"screen_n_in":null,"score":{"opus":0.02489137047776839,"gpt":0.3110855892601783,"spread":0.2861942187824099,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"metacan-v3-hybrid-931329e0061c","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0002248053,0.0002338088,0.0001395639,0.0002027179,0.0001182531,0.0003377688,0.00037347,0.0002285211,0.0006727409],"category_scores_gemma":[0.000690498,0.0001362212,0.0001994711,0.0002512864,0.0001550437,0.000512169,0.0001574436,0.0002332553,0.0002253055],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.0003852977,"about_ca_system_score_gemma":0.000177665,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.001336448,"about_ca_topic_score_gemma":0.002677921,"domain_scores_codex":[0.9998831,0.00001581541,0.000006588731,0.00003500369,0.00004471113,0.00001491307],"domain_scores_gemma":[0.9995534,0.0002615227,0.00005756644,0.0000544721,0.00006316934,0.000009907116],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.000306152,0.00004831337,0.007332345,0.00009589706,0.00003495882,0.0002008043,0.0002323208,0.01403206,0.9479575,0.0007219124,0.0001890935,0.02884866],"study_design_scores_gemma":[0.000006383847,0.0002552873,0.01562613,0.00001065862,0.00004193052,0.0001793586,0.00006020698,0.05874583,0.9240139,0.0002957165,0.0007497309,0.00001491948],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9756321,0.0001666225,0.0220006,0.00005012954,0.00001143731,0.00001176935,0.0002679599,0.0003381628,0.001521275],"genre_scores_gemma":[0.9960527,0.00007321898,0.002774895,0.00001148002,0.00000379986,0.000008027031,0.0001101709,0.00003511698,0.0009303815],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.001336448,"threshold_uncertainty_score":0.002795577,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W1975290782","doi":"10.1063/1.2345226","title":"Ga N ∕ Al Ga N ultraviolet/infrared dual-band detector","year":2006,"lang":"en","type":"article","venue":"Applied Physics Letters","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":69,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"Institute for Microstructural Sciences","funders":"","keywords":"Infrared; Ultraviolet; Optoelectronics; Materials science; Band gap; Heterojunction; Wide-bandgap semiconductor; Absorption (acoustics); Detector; Optics; Physics","authors":[{"name":"Gamini Ariyawansa","is_ca":false},{"name":"M. B. M. Rinzan","is_ca":false},{"name":"Mustafa Alevli","is_ca":false},{"name":"Martin Straßburg","is_ca":false},{"name":"N. Dietz","is_ca":false},{"name":"A. G. U. Perera","is_ca":false},{"name":"S. G. Matsik","is_ca":false},{"name":"Ali Asghar","is_ca":false},{"name":"Ian T. Ferguson","is_ca":false},{"name":"Hui Luo","is_ca":true},{"name":"A. Bezinger","is_ca":true},{"name":"H. C. Liu","is_ca":true}],"retraction":null,"screen_n_in":null,"score":{"opus":0.007466711895895183,"gpt":0.2068899686212892,"spread":0.199423256725394,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"metacan-v3-hybrid-931329e0061c","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0001083815,0.0002922489,0.0001727075,0.0002923484,0.0002068029,0.0004933141,0.0005707075,0.0004519052,0.004631677],"category_scores_gemma":[0.0001526868,0.0002004283,0.0001242705,0.0001376478,0.0001599745,0.0002465486,0.0002197989,0.0002184919,0.001526753],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.0003214709,"about_ca_system_score_gemma":0.0001328325,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.0005540077,"about_ca_topic_score_gemma":0.00129702,"domain_scores_codex":[0.9998497,0.00001295889,0.000003358183,0.00005063783,0.00006439723,0.0000190278],"domain_scores_gemma":[0.9999194,0.00001561926,0.0000165708,0.00000759594,0.00003040915,0.00001045147],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.0001847805,0.00002873872,0.001690243,0.00005763633,0.00001527951,0.0001604741,0.00002192357,0.0001864165,0.9775237,0.001020657,0.001652638,0.01745745],"study_design_scores_gemma":[0.00001781525,0.0001419075,0.005044716,0.0000145381,0.00004150014,0.0007548442,0.00006381322,0.01083368,0.9619416,0.0005273651,0.02059812,0.00002008535],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.7737848,0.002382555,0.1053461,0.0005318915,0.0008383415,0.0001421246,0.001196957,0.005473656,0.1103037],"genre_scores_gemma":[0.9231856,0.0004790042,0.03595641,0.0003630907,0.00003195181,0.00005697048,0.0002461396,0.00005593457,0.03962484],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.004631677,"threshold_uncertainty_score":0.01549447,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null}]}