{"meta":{"page":1,"per_page":50,"max_per_page":100,"total":243,"total_is_capped":false,"direct_labels_cover":0,"predictions_cover":243,"direct_label_status":"direct model label, unvalidated","prediction_status":"machine_predicted_unvalidated (Codex and Gemma teacher distillation)","score_status":"score_only:v0-immature-baseline (scores rank; they never assert a category)","snapshot":{"source":"OpenAlex, pinned release, all 482 partitions","release":"2026-06-24","frame_built":"2026-07-12"},"query_hash":"1ba7f676865f","filters":{"topic":"Semiconductor materials and interfaces"}},"results":[{"id":"W2067626964","doi":"10.1103/physrevlett.92.085901","title":"Solute Diffusion in Metals: Larger Atoms Can Move Faster","year":2004,"lang":"en","type":"article","venue":"Physical Review Letters","topic":"Semiconductor materials and interfaces","field":"Physics and Astronomy","cited_by":263,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"University of British Columbia","funders":"","keywords":"Diffusion; Vacancy defect; Chemical physics; Nickel; Materials science; Electron; Transition metal; Metal; Atomic physics; Thermodynamics; Condensed matter physics; Physics; Chemistry","retraction":null,"screen_n_in":null,"score":{"opus":0.01667958864051372,"gpt":0.277913542765315,"spread":0.2612339541248013,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0000915847,0.0001964509,0.0004340853,0.00002507963,0.00003113605,0.00003890412,0.0001685645,0.000007135794,0.0003639063],"category_scores_gemma":[0.00000470016,0.000146263,0.0001739314,0.0001134595,0.00003984048,0.0001468061,0.00007177109,0.000133179,0.0001987208],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.00003562156,"about_ca_system_score_gemma":0.00001359092,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.0003731603,"about_ca_topic_score_gemma":0.000003963131,"domain_scores_codex":[0.9989772,0.00005540033,0.0002575641,0.0002689242,0.0001473241,0.0002935936],"domain_scores_gemma":[0.9995782,0.00002266947,0.00009292919,0.0002252918,0.00001436039,0.00006650615],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.000009226368,0.0004368808,0.00241438,0.0003641311,0.00009212962,0.000006460912,0.0005953592,0.00008768095,0.983979,0.006128307,0.002585163,0.003301223],"study_design_scores_gemma":[0.01141416,0.0004729742,0.04123013,0.02607322,0.001198062,0.00001147418,0.000662389,0.001077441,0.6316785,0.06563249,0.213871,0.006678076],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9943827,0.001092756,0.0001773211,0.003486636,0.0001709141,0.0002478179,0.00002155616,0.00001686565,0.0004034506],"genre_scores_gemma":[0.9916789,0.0001677551,0.00004786863,0.007672751,0.0003201379,0.00004788005,0.00002158075,0.00002067998,0.00002247143],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.3523005,"threshold_uncertainty_score":0.5964432,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2036855874","doi":"10.1149/1.3111037","title":"First Principles Model of Amorphous Silicon Lithiation","year":2009,"lang":"en","type":"article","venue":"Journal of The Electrochemical Society","topic":"Semiconductor materials and interfaces","field":"Physics and Astronomy","cited_by":212,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":true,"ca_fund":true,"ca_venue":false,"about_ca":false},"ca_institutions":"Dalhousie University","funders":"Natural Sciences and Engineering Research Council of Canada; Killam Trusts; Dalhousie University","keywords":"Amorphous solid; Protocol (science); Amorphous silicon; Projector; Simple (philosophy); Materials science; Silicon; Computer science; Yield (engineering); Biological system; Chemistry; Optoelectronics; Crystalline silicon; Crystallography; Composite material","retraction":null,"screen_n_in":null,"score":{"opus":0.01457018199329887,"gpt":0.2303468620493896,"spread":0.2157766800560907,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0001281908,0.00008005661,0.0001760194,0.000005990662,0.00004743315,0.0000175055,0.0002356248,0.00004143676,0.00005226656],"category_scores_gemma":[0.00001247132,0.0000494937,0.0003188162,0.00005563522,0.00002967146,0.00008709944,0.00002236676,0.0001780252,5.730426e-7],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.00003964261,"about_ca_system_score_gemma":0.00005062766,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.000004815068,"about_ca_topic_score_gemma":1.126919e-7,"domain_scores_codex":[0.9993277,0.00001228226,0.000316892,0.00006162529,0.000155307,0.0001262417],"domain_scores_gemma":[0.999333,0.00002187057,0.0004126524,0.00009988,0.00009996666,0.00003265075],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.00001904992,0.00007176791,0.0006831753,0.000004911352,0.00004296517,1.104364e-8,0.0002529921,0.0002985138,0.9970407,0.0008343358,0.0006920515,0.00005948962],"study_design_scores_gemma":[0.0002098804,0.00006672961,0.00048167,0.00003232532,0.00003025186,0.000001602247,0.0000494002,0.005470674,0.9853736,0.008018276,0.0002103298,0.00005532109],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9963343,0.00009796201,0.002504747,0.000693145,0.00007414554,0.00004157358,0.000002950325,0.000003441658,0.0002478041],"genre_scores_gemma":[0.9979936,0.00001396775,0.001519674,0.0001084429,0.0002752706,4.368964e-7,7.34767e-7,0.000004908721,0.00008297844],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.0116672,"threshold_uncertainty_score":0.2018294,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2092503379","doi":"10.1149/1.1359194","title":"Electrochemistry of InSb as a Li Insertion Host: Problems and Prospects","year":2001,"lang":"en","type":"article","venue":"Journal of The Electrochemical Society","topic":"Semiconductor materials and interfaces","field":"Physics and Astronomy","cited_by":136,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":true,"ca_fund":true,"ca_venue":false,"about_ca":false},"ca_institutions":"Dalhousie University","funders":"Natural Sciences and Engineering Research Council of Canada; Dalhousie University","keywords":"Electrochemistry; Intercalation (chemistry); Reactivity (psychology); Carbonate; Ethylene carbonate; Indium; Diffraction; In situ; Chemistry; Diethyl carbonate; Materials science; Crystallography; Electrode; Inorganic chemistry; Physical chemistry; Metallurgy; Organic chemistry","retraction":null,"screen_n_in":null,"score":{"opus":0.007221246840607449,"gpt":0.2212387183763666,"spread":0.2140174715357592,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0001451617,0.0001153617,0.0002195165,0.000007833053,0.00005482276,0.00002964418,0.0002029856,0.00006151018,0.0001099119],"category_scores_gemma":[0.00001946906,0.00007446553,0.0002158242,0.0001197303,0.00007195494,0.0001052281,0.00005072383,0.000288466,7.600062e-7],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.00004164573,"about_ca_system_score_gemma":0.00006600351,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.00001438384,"about_ca_topic_score_gemma":1.677192e-7,"domain_scores_codex":[0.9991902,0.00001877273,0.0003216635,0.0001004449,0.0001773357,0.0001916463],"domain_scores_gemma":[0.9992915,0.00002294691,0.0003994122,0.0001035008,0.0001261214,0.0000564668],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.00004073386,0.00008237176,0.006839627,0.0000205013,0.00009657913,9.721403e-8,0.000278743,2.339916e-7,0.9921311,0.000136146,0.000300858,0.00007303456],"study_design_scores_gemma":[0.000376874,0.0001342648,0.0007620025,0.00007236839,0.00003860639,0.00003994759,0.0001058842,0.00001952988,0.9927003,0.004860114,0.0008091881,0.00008089405],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9983007,0.0005098289,0.0002015268,0.0003735113,0.0000615481,0.00007795786,0.000001067797,0.0000044768,0.0004694359],"genre_scores_gemma":[0.9991136,0.00009927527,0.0002322925,0.00007463889,0.0003211489,0.000002562448,9.883628e-7,0.00001010136,0.0001454375],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.006077624,"threshold_uncertainty_score":0.3036616,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2094866327","doi":"10.1016/j.mee.2006.09.006","title":"Effects of additive elements on the phase formation and morphological stability of nickel monosilicide films","year":2006,"lang":"en","type":"article","venue":"Microelectronic Engineering","topic":"Semiconductor materials and interfaces","field":"Physics and Astronomy","cited_by":135,"is_retracted":false,"has_abstract":false,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"Polytechnique Montréal","funders":"U.S. Department of Energy","keywords":"Materials science; Silicide; Annealing (glass); Salicide; Nickel; Sheet resistance; Phase (matter); Electrical resistivity and conductivity; Metal; Chemical engineering; Economies of agglomeration; Surface roughness; Analytical Chemistry (journal); Thermal stability; Metallurgy; Silicon; Nanotechnology; Composite material; Chemistry; Layer (electronics)","retraction":null,"screen_n_in":null,"score":{"opus":0.005600874015489453,"gpt":0.209240384288827,"spread":0.2036395102733375,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00006720104,0.00009056999,0.0001359552,0.00002002135,0.00001816833,0.000007799281,0.00006123343,0.00001754299,0.0001380504],"category_scores_gemma":[0.000007308995,0.00006413757,0.0000340801,0.00003813651,0.0000220008,0.00005466499,0.0000190895,0.00006791412,0.000001053986],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.00001698764,"about_ca_system_score_gemma":0.000006948298,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.00007192011,"about_ca_topic_score_gemma":5.583157e-7,"domain_scores_codex":[0.9995003,0.00001833998,0.0001965628,0.00008932002,0.00004745047,0.0001480148],"domain_scores_gemma":[0.9997108,0.0001000493,0.00008100783,0.00007843025,0.00001887491,0.00001084434],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.00001657527,0.00008261627,0.0001145316,0.00003047645,0.00001862893,1.198489e-7,0.00004540436,0.00006823245,0.9974989,0.001605046,0.00008601103,0.0004334972],"study_design_scores_gemma":[0.0004244337,0.0001735145,0.0004400249,0.0000298545,0.00001198684,5.156249e-7,0.00003841237,0.00135981,0.9972584,0.00012056,0.00008694056,0.00005554501],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.998486,0.0001945351,0.0009717779,0.000009711675,0.00002722825,0.0001827388,0.00004115727,0.000008212724,0.00007858957],"genre_scores_gemma":[0.9998308,0.000005764734,0.00008221235,0.000003575762,0.00002410413,0.00002137021,0.00002158161,0.000006121476,0.000004415356],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.001484486,"threshold_uncertainty_score":0.2615454,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2114818130","doi":"10.1149/1.1790533","title":"Study of the Electrochemical Performance of Sputtered Si[sub 1−x]Sn[sub x] Films","year":2004,"lang":"en","type":"article","venue":"Journal of The Electrochemical Society","topic":"Semiconductor materials and interfaces","field":"Physics and Astronomy","cited_by":86,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"Dalhousie University","funders":"","keywords":"Amorphous solid; Electrochemistry; Lithium (medication); Materials science; Homogeneous; Sputtering; Composition (language); Sputter deposition; Chemical engineering; Analytical Chemistry (journal); Range (aeronautics); Thin film; Chemistry; Electrode; Crystallography; Nanotechnology; Composite material; Physical chemistry; Organic chemistry; Thermodynamics","retraction":null,"screen_n_in":null,"score":{"opus":0.00897391668524601,"gpt":0.2274051887641757,"spread":0.2184312720789297,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0002210453,0.0001921283,0.0004213917,0.00001191911,0.00009479938,0.00002018591,0.0007925961,0.00007757672,0.00005826708],"category_scores_gemma":[0.00002124584,0.0001061466,0.0005810837,0.0002194473,0.0001316083,0.0001095375,0.0001475506,0.0005541383,0.0000010635],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.00007900237,"about_ca_system_score_gemma":0.0001384512,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.00001395588,"about_ca_topic_score_gemma":4.265282e-7,"domain_scores_codex":[0.998415,0.00005063761,0.0006667724,0.0001463229,0.0004178455,0.0003034258],"domain_scores_gemma":[0.9985955,0.00004809346,0.0008127192,0.000295694,0.0001917663,0.00005619077],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.00007698329,0.000472926,0.006265438,0.00001853735,0.0002489003,6.274799e-8,0.0006896265,0.000009183224,0.9917362,0.00004002219,0.0004099217,0.0000321735],"study_design_scores_gemma":[0.00105022,0.0003940134,0.001808639,0.00008885597,0.000110314,0.00001086109,0.0004892313,0.00001694234,0.9952164,0.000674615,0.00002980282,0.0001101079],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9991353,0.0001016439,0.0001056624,0.0001890461,0.0002032498,0.0001718333,0.000003717376,0.000004303722,0.00008522181],"genre_scores_gemma":[0.9992846,0.00001464942,0.000279593,0.00008126014,0.0003010624,0.000003416999,9.688863e-7,0.00001725876,0.00001716686],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.004456799,"threshold_uncertainty_score":0.4328535,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2043478458","doi":"10.1149/1.1574231","title":"Electrochemical Performance of SiAlSn Films Prepared by Combinatorial Sputtering","year":2003,"lang":"en","type":"article","venue":"Electrochemical and Solid-State Letters","topic":"Semiconductor materials and interfaces","field":"Physics and Astronomy","cited_by":84,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"Dalhousie University","funders":"","keywords":"Electrochemistry; Amorphous solid; Materials science; Lithium (medication); Homogeneous; Sputtering; Chemical engineering; Sputter deposition; Voltage; Nanotechnology; Electrode; Thin film; Crystallography; Chemistry; Physical chemistry; Thermodynamics; Electrical engineering","retraction":null,"screen_n_in":null,"score":{"opus":0.004235791415147317,"gpt":0.2108130750834945,"spread":0.2065772836683472,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00009734627,0.0002535075,0.0003780785,0.00003042124,0.00006875883,0.0000484558,0.0001568144,0.0000565058,0.0003045436],"category_scores_gemma":[0.00001165243,0.000235169,0.00007771458,0.00008954601,0.0001181856,0.0001344962,0.00003864141,0.0002035406,0.000005481174],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.00002025712,"about_ca_system_score_gemma":0.00002395177,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.00001593754,"about_ca_topic_score_gemma":7.272017e-8,"domain_scores_codex":[0.9985614,0.0000439772,0.0003753166,0.0003474205,0.0001608657,0.0005110619],"domain_scores_gemma":[0.9995115,0.0000480475,0.0001310356,0.0001619401,0.00003543581,0.0001120544],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.00008951536,0.00006378313,0.001513685,0.00003005795,0.00006295575,2.888064e-7,0.000129348,7.774455e-7,0.9953469,0.0003001677,0.00241523,0.00004727105],"study_design_scores_gemma":[0.0006463302,0.0001258167,0.00002227522,0.00002387639,0.00001905694,0.000003902927,0.00002206995,0.00006782923,0.9966098,0.000733644,0.00146235,0.0002630139],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9985473,0.00009403269,0.0003470391,0.0001267708,0.0001716238,0.0001259709,0.00001712515,0.00002677257,0.0005433531],"genre_scores_gemma":[0.9992309,0.00001948951,0.000197795,0.0002794456,0.0001116722,0.00001960756,0.00005890981,0.00002578181,0.00005643954],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.00149141,"threshold_uncertainty_score":0.9589912,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2062058582","doi":"10.1021/jp0571675","title":"A Theoretical Study on Growth Patterns of Ni-Doped Germanium Clusters","year":2006,"lang":"en","type":"article","venue":"The Journal of Physical Chemistry B","topic":"Semiconductor materials and interfaces","field":"Physics and Astronomy","cited_by":78,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"University of Guelph","funders":"","keywords":"Germanium; Doping; Cluster (spacecraft); Materials science; Fragmentation (computing); Crystallography; Atomic orbital; Chemical physics; Chemistry; Electron; Silicon; Physics; Metallurgy; Optoelectronics","retraction":null,"screen_n_in":null,"score":{"opus":0.007332530163151623,"gpt":0.2417762703329335,"spread":0.2344437401697819,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0001642066,0.0001294207,0.0002675611,0.000009597506,0.00003200872,0.00002095167,0.0002939246,0.00001619524,0.0004496265],"category_scores_gemma":[0.000003680584,0.00007397103,0.0001246678,0.00003607955,0.00008838119,0.00005306017,0.00004793232,0.0001895,0.000005328453],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.00001195115,"about_ca_system_score_gemma":0.00001651656,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.00005818227,"about_ca_topic_score_gemma":9.086258e-8,"domain_scores_codex":[0.9991906,0.00006476674,0.0003064824,0.00007598412,0.0002304465,0.0001317409],"domain_scores_gemma":[0.9993228,0.0001095137,0.000283762,0.000156027,0.00008987363,0.00003798062],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.0001536951,0.0009779717,0.002417399,0.00001824053,0.00008890692,0.000001688202,0.000480367,0.00004238034,0.9906152,0.004927341,0.0002470445,0.00002972875],"study_design_scores_gemma":[0.0005520742,0.0002610796,0.002215456,0.00004335109,0.00008821575,0.000002948234,0.001154588,0.00004260952,0.9917178,0.003827967,0.000009159814,0.00008474681],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9944757,0.000004945774,0.00003750331,0.00008060622,0.00006160073,0.00006080055,0.00001661578,0.000003339937,0.005258911],"genre_scores_gemma":[0.9987492,3.008928e-7,0.000001778488,0.00001289982,0.001160678,0.000001095122,0.000001790336,0.00001187887,0.0000603953],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.005198516,"threshold_uncertainty_score":0.4923095,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W1991333611","doi":"10.1103/physrevlett.92.255504","title":"Stable Fourfold Configurations for Small Vacancy Clusters in Silicon from<i>ab initio</i>Calculations","year":2004,"lang":"en","type":"article","venue":"Physical Review Letters","topic":"Semiconductor materials and interfaces","field":"Physics and Astronomy","cited_by":75,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"Université de Montréal; Regroupement Québécois sur les Matériaux de Pointe","funders":"","keywords":"Silicon; Vacancy defect; Ab initio; Density functional theory; Ring (chemistry); Hexagonal crystal system; Materials science; Ab initio quantum chemistry methods; Atomic physics; Total energy; Molecular physics; Crystallography; Computational chemistry; Condensed matter physics; Physics; Chemistry; Molecule","retraction":null,"screen_n_in":null,"score":{"opus":0.03489974368941658,"gpt":0.2974152511982199,"spread":0.2625155075088034,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0000688152,0.0001853162,0.0003835688,0.00002950449,0.00006898565,0.00005660947,0.0001517205,0.00001049056,0.0002808908],"category_scores_gemma":[0.00001377534,0.0001683914,0.0001728634,0.0001191201,0.00003700525,0.0002097919,0.00002538441,0.000106345,0.00006469392],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.0000493179,"about_ca_system_score_gemma":0.00003884418,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.0006748628,"about_ca_topic_score_gemma":0.0000213318,"domain_scores_codex":[0.9989868,0.00004058461,0.0003387622,0.0002802236,0.00008884291,0.0002647829],"domain_scores_gemma":[0.9994379,0.0001211857,0.0001219444,0.0002188586,0.00003202067,0.00006803921],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.00002675907,0.0006148929,0.001577994,0.0005088635,0.0001728672,0.000001594636,0.0005251894,0.003656133,0.9424636,0.04296581,0.005421499,0.002064739],"study_design_scores_gemma":[0.02103481,0.000771076,0.02292689,0.02391175,0.00212194,0.000003301499,0.001029658,0.008104432,0.564559,0.1505212,0.1985072,0.006508639],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9893311,0.000654172,0.002695829,0.005519658,0.0001866313,0.000761863,0.0002416368,0.00002620991,0.0005829376],"genre_scores_gemma":[0.9928945,0.00009850907,0.0004321942,0.005506438,0.0004132206,0.0003335174,0.0002874661,0.00002404299,0.00001005715],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.3779046,"threshold_uncertainty_score":0.6866803,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2074951624","doi":"10.1063/1.2219080","title":"Reaction of thin Ni films with Ge: Phase formation and texture","year":2006,"lang":"en","type":"article","venue":"Journal of Applied Physics","topic":"Semiconductor materials and interfaces","field":"Physics and Astronomy","cited_by":69,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":true,"ca_fund":true,"ca_venue":false,"about_ca":false},"ca_institutions":"Polytechnique Montréal; Regroupement Québécois sur les Matériaux de Pointe","funders":"Canada Research Chairs; U.S. Department of Energy","keywords":"Amorphous solid; Epitaxy; Texture (cosmology); Substrate (aquarium); Materials science; Germanium; Pole figure; Phase (matter); Crystallography; Scattering; Diffraction; Thin film; Analytical Chemistry (journal); X-ray crystallography; Chemistry; Optics; Nanotechnology; Metallurgy; Layer (electronics); Silicon; Physics","retraction":null,"screen_n_in":null,"score":{"opus":0.00826457053196731,"gpt":0.2309108365342627,"spread":0.2226462660022954,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00005825877,0.00007661761,0.000162391,0.00001877717,0.00002693364,0.00002647258,0.00004380905,0.00001868409,0.00003590827],"category_scores_gemma":[2.451931e-7,0.00005331463,0.00002759226,0.00004257102,0.00002396273,0.0002546233,0.000007554991,0.00008739649,0.000001115396],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.000006157455,"about_ca_system_score_gemma":0.00001557758,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.00003382895,"about_ca_topic_score_gemma":4.434813e-7,"domain_scores_codex":[0.9995487,0.000005439851,0.0002283453,0.0000472174,0.0001062941,0.00006397497],"domain_scores_gemma":[0.9993706,0.00001010614,0.0004756897,0.00005548212,0.00006923216,0.0000188721],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.0001590686,0.0001401824,0.0001062466,0.00001782862,0.00003146861,1.991961e-7,0.0002623883,0.0005963501,0.9871048,0.007147793,0.001497389,0.002936277],"study_design_scores_gemma":[0.001315196,0.0001681061,0.0003214673,0.00004092148,0.00005161,0.000004155477,0.0006402927,0.0004683826,0.9824498,0.01362487,0.0008301865,0.00008503461],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9939249,0.00001950689,0.001514365,0.00001017309,0.00006647099,0.0000555504,0.00001381404,0.00000275288,0.00439246],"genre_scores_gemma":[0.9990808,0.000002490102,0.0004750509,0.00001099932,0.0003903848,0.000001161598,0.00001234916,0.000007299448,0.0000195097],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.006477082,"threshold_uncertainty_score":0.2174108,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W1485237282","doi":"10.1149/2.0731509jes","title":"Combinatorial Investigations of Ni-Si Negative Electrode Materials for Li-Ion Batteries","year":2015,"lang":"en","type":"article","venue":"Journal of The Electrochemical Society","topic":"Semiconductor materials and interfaces","field":"Physics and Astronomy","cited_by":58,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":true,"ca_fund":true,"ca_venue":false,"about_ca":false},"ca_institutions":"Dalhousie University","funders":"Natural Sciences and Engineering Research Council of Canada; Killam Trusts","keywords":"Anode; Amorphous solid; Materials science; Electrode; Ion; Thin film; Voltage; Metal; Internal stress; Transition metal; Analytical Chemistry (journal); Chemical engineering; Metallurgy; Nanotechnology; Chemistry; Crystallography; Composite material; Electrical engineering; Physical chemistry; Catalysis; Chromatography","retraction":null,"screen_n_in":null,"score":{"opus":0.01837660284679594,"gpt":0.2567903649497102,"spread":0.2384137621029143,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0003826194,0.0001223002,0.0003104188,0.00001026508,0.00006745404,0.00004428958,0.0002854409,0.00006082722,0.00006820147],"category_scores_gemma":[0.0001367594,0.00008027917,0.0002468747,0.00008772795,0.0001202902,0.0001543469,0.00004812523,0.0001544827,7.972594e-7],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.00008787436,"about_ca_system_score_gemma":0.0002246231,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.00002398095,"about_ca_topic_score_gemma":2.094112e-7,"domain_scores_codex":[0.9989809,0.00005853535,0.0004400976,0.00008913945,0.0002356226,0.0001956745],"domain_scores_gemma":[0.9986503,0.00008628613,0.0005914335,0.0001088115,0.0004887069,0.00007443754],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.00009591709,0.00005791007,0.0002864069,0.00001149752,0.0001346098,1.157284e-8,0.0006234654,7.116556e-7,0.9837592,0.003515132,0.01150476,0.00001035898],"study_design_scores_gemma":[0.0007468355,0.0001951317,0.0000351207,0.00003375845,0.00005989478,0.000002064706,0.0003002894,0.000007648855,0.9094509,0.08803019,0.001060727,0.00007740004],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9967611,0.00004852668,0.001008883,0.0008013066,0.001106345,0.0001385236,0.00002236945,0.000004607726,0.0001083372],"genre_scores_gemma":[0.9970776,0.00000347067,0.001433584,0.00009796618,0.001316791,0.000008223398,0.000006026959,0.00001351676,0.00004283476],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.08451506,"threshold_uncertainty_score":0.3273689,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2092740353","doi":"10.1063/1.3551626","title":"Strain relief and AlSb buffer layer morphology in GaSb heteroepitaxial films grown on Si as revealed by high-angle annular dark-field scanning transmission electron microscopy","year":2011,"lang":"en","type":"article","venue":"Applied Physics Letters","topic":"Semiconductor materials and interfaces","field":"Physics and Astronomy","cited_by":57,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"McMaster University","funders":"","keywords":"Dark field microscopy; Scanning transmission electron microscopy; Materials science; Epitaxy; Transmission electron microscopy; Dislocation; Crystallography; Layer (electronics); Thin film; Scanning electron microscope; High-resolution transmission electron microscopy; Condensed matter physics; Optoelectronics; Optics; Microscopy; Nanotechnology; Chemistry; Composite material","retraction":null,"screen_n_in":null,"score":{"opus":0.01036677886369863,"gpt":0.2343217423675925,"spread":0.2239549635038939,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.0001231958,0.0003361877,0.0003948947,0.00004977615,0.0000874308,0.00006450756,0.0002044926,0.00009603825,0.0004811382],"category_scores_gemma":[0.000001486858,0.0003200967,0.00006927393,0.00008719775,0.00007461,0.0001416237,0.00004193962,0.0003156546,0.00003328423],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.0000233398,"about_ca_system_score_gemma":0.00001627704,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.0008646356,"about_ca_topic_score_gemma":4.844744e-7,"domain_scores_codex":[0.9984478,0.00006706592,0.000320734,0.000530459,0.0001393104,0.000494601],"domain_scores_gemma":[0.9994454,0.00005132286,0.0001376707,0.0002590941,0.00001505989,0.00009148577],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.0002467564,0.0001540973,0.0008164159,0.00002530527,0.00004778804,0.000002921833,0.0008866061,0.000008638469,0.9843397,0.002770898,0.009739832,0.0009610486],"study_design_scores_gemma":[0.0008622477,0.0002779546,0.0004743533,0.00008590744,0.00002150741,5.599507e-7,0.0001284488,0.000004701898,0.9942295,0.002811997,0.0007482738,0.0003545473],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9968092,0.00004444741,0.0005404316,0.0002871355,0.0001733878,0.0003105663,0.00007404218,0.00003140433,0.001729341],"genre_scores_gemma":[0.9964771,0.00001000184,0.0005447993,0.002454459,0.0002109922,0.00006191305,0.0001522007,0.00005277901,0.00003575747],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.009889808,"threshold_uncertainty_score":0.9999251,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W1980067738","doi":"10.1088/0957-4484/15/11/020","title":"A study of the size effect on the temperature-dependent resistivity of bismuth nanowires with rectangular cross-sections","year":2004,"lang":"en","type":"article","venue":"Nanotechnology","topic":"Semiconductor materials and interfaces","field":"Physics and Astronomy","cited_by":55,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"McGill University","funders":"","keywords":"Nanowire; Materials science; Electrical resistivity and conductivity; Bismuth; Semiconductor; Scattering; Conductivity; Electron mobility; Condensed matter physics; Nanotechnology; Optoelectronics; Optics; Metallurgy","retraction":null,"screen_n_in":null,"score":{"opus":0.008466642772708798,"gpt":0.2473779148414283,"spread":0.2389112720687195,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0001814885,0.0001355937,0.0002388203,0.0000378543,0.0001583288,0.00001959159,0.0003323076,0.00009231668,0.00004875348],"category_scores_gemma":[0.00006110765,0.00006261499,0.00005398739,0.0002132361,0.0002352428,0.00002993514,0.00008729377,0.0001819317,0.000002978256],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.00002173968,"about_ca_system_score_gemma":0.00004088674,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.0009683679,"about_ca_topic_score_gemma":0.0001155259,"domain_scores_codex":[0.9992098,0.0001101242,0.0001892439,0.0002054615,0.0001467097,0.000138699],"domain_scores_gemma":[0.9990769,0.0001448482,0.0001733184,0.0005341777,0.00006090782,0.000009871934],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.0001440156,0.0004689156,0.01285173,0.000008145998,0.0001309239,9.911444e-7,0.0003182224,0.0001822382,0.9806364,0.005061626,0.00001788021,0.000178886],"study_design_scores_gemma":[0.0008495417,0.001431117,0.009766776,0.00004433202,0.00003003926,0.000001853349,0.0005856225,1.780244e-7,0.9861858,0.0009872407,0.00004983387,0.00006767864],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9988247,0.00002336791,0.000002911439,0.0002156108,0.000218905,0.0004939494,0.00003140713,0.00003073923,0.0001584112],"genre_scores_gemma":[0.9998023,5.410021e-7,0.000008362239,0.00001181927,0.00003113874,0.0000583408,5.386322e-7,0.00001272634,0.00007426686],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.005549362,"threshold_uncertainty_score":0.2553365,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2004607101","doi":"10.1149/1.2429042","title":"In Situ AFM Measurements of the Expansion and Contraction of Amorphous Sn-Co-C Films Reacting with Lithium","year":2007,"lang":"en","type":"article","venue":"Journal of The Electrochemical Society","topic":"Semiconductor materials and interfaces","field":"Physics and Astronomy","cited_by":53,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"Dalhousie University","funders":"","keywords":"In situ; Electrochemistry; Amorphous solid; Atomic force microscopy; Materials science; Electrode; Lithium (medication); Volume expansion; Metal; Composite material; Chemical engineering; Analytical Chemistry (journal); Nanotechnology; Chemistry; Metallurgy; Crystallography; Physical chemistry","retraction":null,"screen_n_in":null,"score":{"opus":0.01332304028071313,"gpt":0.2511920982867121,"spread":0.2378690580059989,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0004736997,0.00007432113,0.0001817388,0.000008050724,0.00003548079,0.00000938184,0.0001289613,0.00004062379,0.00002145663],"category_scores_gemma":[0.00001871571,0.00003767647,0.0001247721,0.00007654385,0.00005872295,0.0001027007,0.00002228962,0.000242668,6.527947e-8],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.00003596211,"about_ca_system_score_gemma":0.00003814177,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.00004910261,"about_ca_topic_score_gemma":0.000002080132,"domain_scores_codex":[0.9992399,0.00002952216,0.0003205028,0.00006158899,0.000220489,0.0001279525],"domain_scores_gemma":[0.9991678,0.0000567259,0.0005696345,0.00008127985,0.0001010382,0.0000235334],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.0001089796,0.00006349078,0.01600383,0.000009875257,0.00006025046,5.314335e-8,0.0004304994,8.429581e-7,0.9830084,0.000008725297,0.0002317685,0.00007327065],"study_design_scores_gemma":[0.0004639221,0.00006033105,0.006132758,0.0001108069,0.00003097449,0.000007773184,0.0005374344,0.000002894636,0.9923752,0.0001882517,0.00004872909,0.00004094497],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9991902,0.00008141497,0.0001603127,0.0001294739,0.0001007894,0.00006368479,9.151634e-7,9.55623e-7,0.0002722302],"genre_scores_gemma":[0.9994528,0.000005130671,0.0003650851,0.00004055061,0.0001109308,3.909709e-7,2.660118e-7,0.000005910231,0.00001892831],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.009871074,"threshold_uncertainty_score":0.1536402,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2037967942","doi":"10.1149/1.2359690","title":"Phase Changes in Electrochemically Lithiated Silicon at Elevated Temperature","year":2006,"lang":"en","type":"article","venue":"Journal of The Electrochemical Society","topic":"Semiconductor materials and interfaces","field":"Physics and Astronomy","cited_by":52,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":true,"ca_fund":true,"ca_venue":false,"about_ca":false},"ca_institutions":"Dalhousie University","funders":"Natural Sciences and Engineering Research Council of Canada; Dalhousie University","keywords":"Differential scanning calorimetry; Metastability; Phase diagram; Phase (matter); Amorphous solid; Lithium (medication); Materials science; Analytical Chemistry (journal); Diffraction; Silicon; Calorimetry; Alloy; Crystallography; Thermodynamics; Chemistry; Metallurgy; Organic chemistry; Optics","retraction":null,"screen_n_in":null,"score":{"opus":0.005475665448727644,"gpt":0.2327948796181782,"spread":0.2273192141694505,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0002012386,0.0002019629,0.000333357,0.0000208182,0.0000796223,0.00005036719,0.0003797772,0.0001327064,0.0003262641],"category_scores_gemma":[0.00001622426,0.0001299139,0.0003244143,0.0002751585,0.00006233613,0.00008712339,0.00007021701,0.0005844022,0.000002940194],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.0002062682,"about_ca_system_score_gemma":0.00007334834,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.0000329722,"about_ca_topic_score_gemma":0.000005835065,"domain_scores_codex":[0.9986954,0.000052892,0.0004499357,0.0001668918,0.0002385701,0.000396289],"domain_scores_gemma":[0.9992166,0.00004917742,0.0003816729,0.0001530184,0.0001410334,0.00005849752],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.0001099749,0.0003336579,0.001717323,0.000007125197,0.00006509846,4.004097e-7,0.00008291581,7.679072e-7,0.9912877,0.00007931873,0.006282244,0.000033484],"study_design_scores_gemma":[0.001683688,0.0001401105,0.000276059,0.00004765435,0.00003309841,0.00001303266,0.00004480978,0.00003442939,0.9944994,0.001558135,0.001521409,0.0001481709],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9981387,0.0003401501,0.00001782658,0.001073614,0.0001402449,0.0001013475,0.000007276887,0.00001130161,0.000169516],"genre_scores_gemma":[0.9983813,0.00001571155,0.0001703178,0.0002276872,0.0008094538,0.00000450355,0.00001681551,0.00001980704,0.0003544597],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.004760834,"threshold_uncertainty_score":0.5297737,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W1969577147","doi":"10.1063/1.3327451","title":"Metastable phase formation during the reaction of Ni films with Si(001): The role of texture inheritance","year":2010,"lang":"en","type":"article","venue":"Journal of Applied Physics","topic":"Semiconductor materials and interfaces","field":"Physics and Astronomy","cited_by":51,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"Polytechnique Montréal; Regroupement Québécois sur les Matériaux de Pointe","funders":"","keywords":"Materials science; Texture (cosmology); Silicide; Orthorhombic crystal system; Metastability; Activation energy; Pole figure; Phase (matter); Dopant; Analytical Chemistry (journal); Crystallography; Thin film; Silicon; Metallurgy; Doping; Chemistry; Crystal structure; Nanotechnology; Physical chemistry; Optoelectronics","retraction":null,"screen_n_in":null,"score":{"opus":0.006492490170249977,"gpt":0.221299914014698,"spread":0.214807423844448,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0001387818,0.00008613674,0.0001816863,0.00001221586,0.00006425827,0.00002593253,0.0001614893,0.00001852469,0.00008310956],"category_scores_gemma":[0.000001153213,0.00004226911,0.00005169033,0.00007689602,0.00005365688,0.0002701466,0.0000165498,0.0002237898,0.000001240487],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.000004842852,"about_ca_system_score_gemma":0.00002384672,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.00002595311,"about_ca_topic_score_gemma":0.000001694179,"domain_scores_codex":[0.9994193,0.00001135397,0.0002790897,0.00004788644,0.0001577348,0.00008457996],"domain_scores_gemma":[0.9988889,0.00002517813,0.0007841015,0.0001506787,0.0001337688,0.00001741659],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.0001639075,0.0001261435,0.00005910396,0.00001373815,0.00007265659,4.43734e-8,0.000672642,0.0003418567,0.9926564,0.003742223,0.00008810851,0.002063146],"study_design_scores_gemma":[0.0006177095,0.00006532852,0.0001607811,0.00002114745,0.00005289413,0.000002759896,0.002172073,0.0001954026,0.9912826,0.003970011,0.00140932,0.00004997696],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9971092,0.00002819135,0.0001470765,0.00001225322,0.0001149334,0.00009920883,0.00002233814,0.000001987493,0.002464761],"genre_scores_gemma":[0.9994529,0.000003627168,0.0001896152,0.000006730935,0.0003134504,0.000004027397,0.000003808562,0.000009095809,0.00001666993],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.002448091,"threshold_uncertainty_score":0.1723684,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W1989233857","doi":"10.1063/1.3323097","title":"Morphological stability and specific resistivity of sub-10 nm silicide films of Ni1−xPtx on Si substrate","year":2010,"lang":"en","type":"article","venue":"Applied Physics Letters","topic":"Semiconductor materials and interfaces","field":"Physics and Astronomy","cited_by":49,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"Polytechnique Montréal","funders":"","keywords":"Electrical resistivity and conductivity; Silicide; Materials science; Substrate (aquarium); Epitaxy; Alloy; Scattering; Thin film; Metallurgy; Silicon; Composite material; Nanotechnology; Optics; Layer (electronics); Electrical engineering","retraction":null,"screen_n_in":null,"score":{"opus":0.0204275650167431,"gpt":0.2248758105022642,"spread":0.204448245485521,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0001595896,0.0001986851,0.0003653489,0.00001849072,0.00004352796,0.00002408511,0.0001621796,0.00004946903,0.0006680495],"category_scores_gemma":[0.000003572477,0.0001706826,0.00007753728,0.00007382872,0.0003482084,0.0000499305,0.00005699385,0.0002146148,0.00001426308],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.000005062299,"about_ca_system_score_gemma":0.00001138782,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.00009843912,"about_ca_topic_score_gemma":0.000002122769,"domain_scores_codex":[0.9989812,0.00003171969,0.0002977691,0.0003349081,0.0001482412,0.0002061456],"domain_scores_gemma":[0.9991122,0.0001417736,0.0002757078,0.0003804427,0.00003571958,0.00005412554],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.0001129833,0.0001718943,0.005046634,0.00002131473,0.00002895937,4.079046e-7,0.0000942483,0.00002036275,0.9821958,0.01102397,0.0005004306,0.0007829879],"study_design_scores_gemma":[0.0002951405,0.00004367705,0.02795262,0.000008194455,0.0000129514,1.448665e-7,0.00007475575,0.000005755774,0.9700536,0.001298861,0.00009937615,0.000154949],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9969459,0.000004045226,0.00006012696,0.00005491232,0.0001327518,0.0001863832,0.0001436349,0.00001438118,0.002457845],"genre_scores_gemma":[0.9995078,0.000001116777,0.0001767431,0.00007178113,0.0001713892,0.00001447359,0.00003608251,0.00001592841,0.000004680598],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.02290599,"threshold_uncertainty_score":0.7314674,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2889746493","doi":"10.1039/c8cp04615h","title":"n-Type Ohmic contact and p-type Schottky contact of monolayer InSe transistors","year":2018,"lang":"en","type":"article","venue":"Physical Chemistry Chemical Physics","topic":"Semiconductor materials and interfaces","field":"Physics and Astronomy","cited_by":46,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"Ministry of Education and Child Care","funders":"Ministry of Science and Technology of the People's Republic of China; National Natural Science Foundation of China","keywords":"Ohmic contact; Monolayer; Schottky barrier; Materials science; Optoelectronics; Transistor; Type (biology); Nanotechnology; Layer (electronics); Electrical engineering; Engineering; Biology; Voltage","retraction":null,"screen_n_in":null,"score":{"opus":0.01676414434512814,"gpt":0.2577196830339821,"spread":0.2409555386888539,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.00004380288,0.0003442861,0.0005670537,0.000008954879,0.00005995604,0.00004372616,0.0002556914,0.00008649714,0.0003947723],"category_scores_gemma":[0.00001768961,0.0003151532,0.0001483324,0.0001761083,0.000204657,0.0002027967,0.00008631616,0.0002652391,0.0000395953],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.00003244906,"about_ca_system_score_gemma":0.00006211544,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.00009988224,"about_ca_topic_score_gemma":9.32108e-8,"domain_scores_codex":[0.9986652,0.00001923082,0.0003256259,0.0004463583,0.0001991516,0.0003444106],"domain_scores_gemma":[0.9989741,0.00008036238,0.0001791899,0.0003543333,0.0002350408,0.0001769672],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.0001787329,0.0003159007,0.0007310781,0.00007886629,0.0001152115,3.611881e-7,0.0003279264,8.11715e-7,0.9964454,0.0008619932,0.0003915555,0.0005522228],"study_design_scores_gemma":[0.0006306365,0.0001268299,0.0001393803,0.00005828857,0.00007359096,7.955029e-7,0.0000804492,0.0002654668,0.9924274,0.005172602,0.0006830231,0.0003415221],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9945879,0.00004520285,0.00003635851,0.00002352112,0.000140946,0.0001149443,0.00004937435,0.00004352758,0.00495822],"genre_scores_gemma":[0.9980026,0.000003657909,0.00005549254,0.00003532303,0.001740535,0.000006514687,0.00005280492,0.00004230108,0.00006069981],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.00489752,"threshold_uncertainty_score":0.9999301,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2069537240","doi":"10.1103/physrevlett.100.226101","title":"Evolution of Thermodynamic Potentials in Closed and Open Nanocrystalline Systems: Ge-Si:Si(001) Islands","year":2008,"lang":"en","type":"article","venue":"Physical Review Letters","topic":"Semiconductor materials and interfaces","field":"Physics and Astronomy","cited_by":44,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"University of Guelph","funders":"","keywords":"Materials science; Epitaxy; Thermal diffusivity; Wetting; Gibbs free energy; Thermodynamics; Diffusion; Surface energy; Elastic energy; Chemical physics; Nanotechnology; Layer (electronics); Chemistry; Physics; Composite material","retraction":null,"screen_n_in":null,"score":{"opus":0.01846850286515737,"gpt":0.2735180824012486,"spread":0.2550495795360913,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00015618,0.0001640001,0.0006100351,0.00002977944,0.00003792264,0.00002922353,0.0002428773,0.000009845956,0.00009960052],"category_scores_gemma":[0.00000557589,0.0001269134,0.00007645824,0.000103336,0.00007479926,0.0002118376,0.000106659,0.0000788318,0.00001336149],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.00002913903,"about_ca_system_score_gemma":0.00002112411,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.0008839949,"about_ca_topic_score_gemma":0.000001435669,"domain_scores_codex":[0.9989431,0.0001316168,0.0003792996,0.0002389517,0.0001244549,0.0001826128],"domain_scores_gemma":[0.9994802,0.00003877086,0.0002050777,0.0002047807,0.00003058803,0.00004058574],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"observational","study_design_scores_codex":[0.00001653139,0.000168675,0.002158385,0.0004987725,0.0000471028,0.000001823657,0.0001136565,0.00003963654,0.9941081,0.001470107,0.001036788,0.0003404088],"study_design_scores_gemma":[0.04593596,0.003638804,0.3365732,0.1080293,0.003564646,0.0001886964,0.002868795,0.1373446,0.2210996,0.02495095,0.1009219,0.01488345],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9943672,0.004143596,0.0001682552,0.0002255721,0.0001269695,0.0005243873,0.00005046483,0.000008072498,0.0003854637],"genre_scores_gemma":[0.9986989,0.0007141196,0.00002466829,0.0002699287,0.0001670136,0.00004730585,0.00003776767,0.00001592443,0.00002435409],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.7730085,"threshold_uncertainty_score":0.517538,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2270618034","doi":"10.1038/srep11466","title":"Understanding of sub-band gap absorption of femtosecond-laser sulfur hyperdoped silicon using synchrotron-based techniques","year":2015,"lang":"en","type":"article","venue":"Scientific Reports","topic":"Semiconductor materials and interfaces","field":"Physics and Astronomy","cited_by":43,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"Canadian Light Source (Canada)","funders":"National Science Council; Ministry of Science and Technology, Taiwan; National Center for Theoretical Sciences","keywords":"X-ray photoelectron spectroscopy; Band gap; XANES; Extended X-ray absorption fine structure; Absorptance; Absorption spectroscopy; Semimetal; Dopant; Chemistry; Analytical Chemistry (journal); Photoemission spectroscopy; Electronic structure; Materials science; Silicon; Spectroscopy; Doping; Optoelectronics; Optics; Nuclear magnetic resonance; Computational chemistry; Physics","retraction":null,"screen_n_in":null,"score":{"opus":0.1244252672883043,"gpt":0.2928165249139334,"spread":0.1683912576256291,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000881286,0.000134613,0.0002812862,0.0001488467,0.00007378509,0.0001030672,0.00009339049,0.00004408341,0.0003151717],"category_scores_gemma":[0.00002016619,0.0001193682,0.00008814842,0.000183112,0.0002332134,0.0002239729,0.00002862904,0.00005112337,0.000002205653],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.00008454058,"about_ca_system_score_gemma":0.000233239,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.0002794284,"about_ca_topic_score_gemma":0.00000421154,"domain_scores_codex":[0.9985635,0.00004429286,0.0005710478,0.0003491621,0.0002817051,0.0001903494],"domain_scores_gemma":[0.9986744,0.00002048009,0.000606913,0.0004100835,0.000212177,0.00007597618],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.00001519326,0.00006195234,0.01144834,0.00003396508,0.00001707877,0.000002527702,0.0001281164,0.0001950604,0.9871282,0.0001143942,0.00076421,0.00009096311],"study_design_scores_gemma":[0.0001511125,0.0000448125,0.00007597692,0.0001107945,0.00002421298,0.000003951231,0.0005962328,0.0003007771,0.9928004,0.005582218,0.0001870376,0.0001225165],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.994549,0.0000317874,0.001195477,0.000007970341,0.001838754,0.0002329218,0.00001548747,0.00002504076,0.00210361],"genre_scores_gemma":[0.9994618,2.004526e-7,0.0002984989,0.000003272569,0.00007559374,0.000005866213,0.00004215282,0.00001535125,0.00009726137],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.01137236,"threshold_uncertainty_score":0.4867693,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2062275184","doi":"10.1116/1.1496512","title":"Scanning spreading resistance microscopy current transport studies on doped III–V semiconductors","year":2002,"lang":"en","type":"article","venue":"Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena","topic":"Semiconductor materials and interfaces","field":"Physics and Astronomy","cited_by":41,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"Nortel (Canada); Simon Fraser University","funders":"","keywords":"Thermionic emission; Doping; Dopant; Spreading resistance profiling; Materials science; Semiconductor; Molecular beam epitaxy; Optoelectronics; Planar; Analytical Chemistry (journal); Contact resistance; Nanotechnology; Chemistry; Epitaxy","retraction":null,"screen_n_in":null,"score":{"opus":0.03795917585363075,"gpt":0.2877126508709217,"spread":0.2497534750172909,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0007204321,0.0003159676,0.0005072446,0.0007319687,0.0005662638,0.0002436168,0.0004155778,0.00005583597,0.00003138589],"category_scores_gemma":[0.00001927583,0.0002332742,0.00006091975,0.0006480989,0.0006789506,0.0005412063,0.00006629372,0.0004218546,4.124616e-7],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.0001582143,"about_ca_system_score_gemma":0.0001409788,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.000001146461,"about_ca_topic_score_gemma":8.832859e-7,"domain_scores_codex":[0.9979905,0.00001928742,0.0006257318,0.0004317342,0.0003996468,0.0005330298],"domain_scores_gemma":[0.9986444,0.00001467669,0.0006469033,0.0001616582,0.000423792,0.0001085389],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.00004513405,0.00004582686,0.002421112,0.00006455342,0.00009005181,9.661196e-7,0.001641484,0.00000385819,0.9715105,0.001080165,0.00005178884,0.02304461],"study_design_scores_gemma":[0.001186011,0.0004739774,0.0003675707,0.0006723133,0.0001286242,0.00002938652,0.001707424,0.00003513192,0.9772504,0.01527505,0.002401524,0.0004725892],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9471037,0.0519212,0.00008868651,0.0002007948,0.0004396872,0.0001176964,0.00000684707,0.00001802625,0.0001033774],"genre_scores_gemma":[0.998693,0.0006651601,0.0004023631,0.00002787101,0.0001511113,0.000004074876,4.481897e-7,0.00001733627,0.00003860716],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.05158934,"threshold_uncertainty_score":0.9512648,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W1969152402","doi":"10.1063/1.1832747","title":"Composition of Ge(Si) islands in the growth of Ge on Si(111) by x-ray spectromicroscopy","year":2005,"lang":"en","type":"article","venue":"Journal of Applied Physics","topic":"Semiconductor materials and interfaces","field":"Physics and Astronomy","cited_by":40,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"Institut National de la Recherche Scientifique","funders":"","keywords":"Stoichiometry; Germanium; Silicon; Analytical Chemistry (journal); Diffusion; Materials science; Deposition (geology); Photoemission electron microscopy; Spectral line; Surface diffusion; Chemical composition; Crystallography; Electron microscope; Chemistry; Physical chemistry; Optoelectronics; Optics; Thermodynamics","retraction":null,"screen_n_in":null,"score":{"opus":0.008195702806742654,"gpt":0.2368226040638261,"spread":0.2286269012570834,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000175879,0.0001255963,0.0003274621,0.00003290584,0.00002508083,0.00002565879,0.0002304295,0.00002779269,0.00009721482],"category_scores_gemma":[5.38759e-7,0.00008643064,0.0001027399,0.00008042523,0.00004729659,0.0001032462,0.00001627876,0.0001865157,0.00000550583],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.00002375835,"about_ca_system_score_gemma":0.00002606564,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.00001692593,"about_ca_topic_score_gemma":1.645265e-7,"domain_scores_codex":[0.9991117,0.00002664624,0.0004556022,0.00008484018,0.0001911671,0.0001300376],"domain_scores_gemma":[0.9991611,0.00005974804,0.0005787938,0.000122108,0.0000553489,0.00002294255],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.0002129566,0.0004424393,0.0003516671,0.00001357204,0.0000512085,1.626064e-7,0.0008853544,0.0004332025,0.9885235,0.00679477,0.001991403,0.0002997016],"study_design_scores_gemma":[0.0007925905,0.0002445028,0.000371122,0.0000510812,0.00002973852,5.245202e-7,0.0002681195,0.00008389503,0.9929973,0.004804233,0.000273201,0.00008372223],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9917701,0.00002534563,0.0002295404,0.00005732111,0.00008790909,0.00008975931,0.00005328848,0.000001656138,0.007685119],"genre_scores_gemma":[0.9989406,0.00001026138,0.0002858939,0.00009368394,0.0006364993,0.000001903536,0.00001359187,0.00001179594,0.000005794127],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.007679325,"threshold_uncertainty_score":0.3524539,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W587379043","doi":"10.1007/s11664-015-3854-x","title":"Molybdenum, Tungsten, and Aluminium Substitution for Enhancement of the Thermoelectric Performance of Higher Manganese Silicides","year":2015,"lang":"en","type":"article","venue":"Journal of Electronic Materials","topic":"Semiconductor materials and interfaces","field":"Physics and Astronomy","cited_by":40,"is_retracted":false,"has_abstract":false,"routes":{"ca_aff":true,"ca_fund":true,"ca_venue":false,"about_ca":false},"ca_institutions":"University of Waterloo","funders":"Natural Sciences and Engineering Research Council of Canada; Région Normandie; Canadian Network for Research and Innovation in Machining Technology, Natural Sciences and Engineering Research Council of Canada","keywords":"Molybdenum; Materials science; Spark plasma sintering; Tungsten; Seebeck coefficient; Thermoelectric effect; Sintering; Metallurgy; Aluminium; Thermal conductivity; Analytical Chemistry (journal); Composite material; Chemistry; Organic chemistry","retraction":null,"screen_n_in":null,"score":{"opus":0.01654157862019739,"gpt":0.2524101065137686,"spread":0.2358685278935712,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0005045885,0.0001049827,0.0003183404,0.00004050973,0.00002660773,0.00002017715,0.0001679089,0.00003031697,0.000278006],"category_scores_gemma":[0.00001032359,0.00006406099,0.00005691734,0.00005404164,0.00005355261,0.0001366229,0.00002559549,0.00004883419,8.708971e-7],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.00003447843,"about_ca_system_score_gemma":0.0001539062,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.00003290998,"about_ca_topic_score_gemma":4.581995e-7,"domain_scores_codex":[0.9990358,0.00004981322,0.000505913,0.00007463356,0.0001478663,0.000186006],"domain_scores_gemma":[0.9988727,0.00002685982,0.0007357155,0.0001106002,0.0002231333,0.00003097501],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.0002678421,0.0000498749,0.0007354319,0.00005311403,0.00007967149,4.484956e-8,0.0001122831,0.000006289645,0.9962872,0.001982684,0.0002542111,0.0001714152],"study_design_scores_gemma":[0.0006109783,0.0007061274,0.001152703,0.0000636898,0.00006192407,0.000005072156,0.00004111812,0.000004305582,0.9958408,0.0007060883,0.0007428159,0.00006431167],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9984853,0.0006607108,0.00002031194,0.0000449226,0.0004880107,0.000180378,0.00001259822,0.000001482327,0.0001063402],"genre_scores_gemma":[0.9994551,0.00003658601,0.00001927415,0.00001119068,0.0002532443,0.000007496064,0.000001742966,0.000009188329,0.000206167],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.001276596,"threshold_uncertainty_score":0.3043971,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2076310820","doi":"10.1063/1.3662110","title":"The thermally-induced reaction of thin Ni films with Si: Effect of the substrate orientation","year":2011,"lang":"en","type":"article","venue":"Journal of Applied Physics","topic":"Semiconductor materials and interfaces","field":"Physics and Astronomy","cited_by":38,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":true,"ca_fund":true,"ca_venue":false,"about_ca":false},"ca_institutions":"Polytechnique Montréal; Regroupement Québécois sur les Matériaux de Pointe","funders":"Fonds Québécois de la Recherche sur la Nature et les Technologies; Natural Sciences and Engineering Research Council of Canada; Canada Research Chairs","keywords":"Materials science; Epitaxy; Nucleation; Annealing (glass); Crystallography; Orthorhombic crystal system; Thin film; Transmission electron microscopy; Pole figure; Texture (cosmology); Chemical engineering; Composite material; Layer (electronics); Nanotechnology; Crystal structure; Chemistry","retraction":null,"screen_n_in":null,"score":{"opus":0.01510338447911387,"gpt":0.2269348517040634,"spread":0.2118314672249496,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0002358228,0.00009881429,0.000192252,0.000009403459,0.00005997279,0.00001586414,0.0001891993,0.00002029198,0.00003347634],"category_scores_gemma":[0.000001538798,0.00004401449,0.00008181601,0.00007727942,0.00005683405,0.0001131165,0.00001613209,0.000133138,0.000001383737],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.000006923021,"about_ca_system_score_gemma":0.00003897346,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.00006455161,"about_ca_topic_score_gemma":0.000001044321,"domain_scores_codex":[0.9993404,0.00004374002,0.0002946156,0.0000589667,0.0001765422,0.0000857187],"domain_scores_gemma":[0.9987301,0.00006008021,0.0009305205,0.0001550158,0.000106112,0.00001812927],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.0004653797,0.00005209345,0.001291156,0.0000117064,0.0001257534,7.133993e-8,0.001211242,0.0001261892,0.9903998,0.005110849,0.00004269945,0.001163087],"study_design_scores_gemma":[0.0004389362,0.0002629731,0.005383221,0.00003674763,0.00007435583,6.379349e-7,0.0007664415,0.00002715505,0.990254,0.002690861,0.00001583768,0.00004886453],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9941745,0.000006134656,0.0000325363,0.000004864533,0.0002813528,0.0001286919,0.000004222787,0.000001903734,0.005365754],"genre_scores_gemma":[0.9997652,0.000002126699,0.00004561432,0.000005572888,0.0001544728,0.000003419842,0.000001044073,0.00001055275,0.00001200822],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.005590649,"threshold_uncertainty_score":0.1794859,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2324145501","doi":"10.1021/ja309476x","title":"Electrodeposition of Crystalline GaAs on Liquid Gallium Electrodes in Aqueous Electrolytes","year":2012,"lang":"en","type":"article","venue":"Journal of the American Chemical Society","topic":"Semiconductor materials and interfaces","field":"Physics and Astronomy","cited_by":35,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":false,"ca_fund":true,"ca_venue":false,"about_ca":false},"ca_institutions":"","funders":"McMaster University","keywords":"Chemistry; Gallium; Aqueous solution; Electrolyte; Electrode; Electrochemistry; Chemical engineering; Inorganic chemistry; Organic chemistry; Physical chemistry","retraction":null,"screen_n_in":null,"score":{"opus":0.007007272524023838,"gpt":0.2443779194966884,"spread":0.2373706469726646,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0002195876,0.0001308674,0.0003498189,0.00001825627,0.000026175,0.00001363244,0.0002480715,0.00002723036,0.0000747421],"category_scores_gemma":[0.00001471398,0.00008473375,0.0003386095,0.0001767537,0.0001176768,0.0001107044,0.00003283371,0.0003161209,0.000001127989],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.00009097187,"about_ca_system_score_gemma":0.00004325438,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.00009039015,"about_ca_topic_score_gemma":2.973953e-7,"domain_scores_codex":[0.9989415,0.00006080788,0.0003989587,0.00008312354,0.0002021093,0.0003135245],"domain_scores_gemma":[0.9989997,0.00007199273,0.0006780594,0.0001230595,0.00006966938,0.0000574846],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.0002239474,0.0002981109,0.003527785,0.000005530856,0.00008320909,7.017266e-8,0.0001719258,0.00001898819,0.9943992,0.0001416815,0.0009187309,0.0002107983],"study_design_scores_gemma":[0.0002254614,0.0004022467,0.00110297,0.00003796378,0.00003033016,0.000006771358,0.0001449675,0.00002259155,0.9974181,0.0003080837,0.0002111511,0.00008932767],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9989909,0.0002411505,0.0001003396,0.0003509413,0.0000666018,0.00005090967,0.000004306559,0.000003916029,0.0001909218],"genre_scores_gemma":[0.9987194,0.00004075971,0.0003099569,0.0002197573,0.000677953,0.000002170616,0.000001714505,0.00001438223,0.00001389724],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.003018912,"threshold_uncertainty_score":0.3455342,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W1985668779","doi":"10.1063/1.1406982","title":"Anisotropic resistivity correlated with atomic ordering in <i>p</i>-type GaAsSb","year":2001,"lang":"en","type":"article","venue":"Applied Physics Letters","topic":"Semiconductor materials and interfaces","field":"Physics and Astronomy","cited_by":30,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"Simon Fraser University","funders":"","keywords":"Superlattice; Materials science; Condensed matter physics; Transmission electron microscopy; Anisotropy; Electrical resistivity and conductivity; Epitaxy; Diffraction; Lattice (music); Alloy; Electron diffraction; Lattice constant; Crystallography; Chemistry; Optics; Nanotechnology; Optoelectronics; Metallurgy; Physics","retraction":null,"screen_n_in":null,"score":{"opus":0.01087144396729917,"gpt":0.2128120809772772,"spread":0.201940637009978,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00004580128,0.0002092303,0.0002452901,0.0000308077,0.00006395447,0.00006037178,0.0001503664,0.00002846821,0.0002084502],"category_scores_gemma":[5.965805e-7,0.0001886572,0.00003009668,0.0002618119,0.00005855715,0.0001239828,0.00004321717,0.000174227,0.00009198961],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.00003612678,"about_ca_system_score_gemma":0.0000228386,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.0003825166,"about_ca_topic_score_gemma":0.000008684536,"domain_scores_codex":[0.999063,0.00002061968,0.0001792782,0.0003055116,0.0001135776,0.000317976],"domain_scores_gemma":[0.9995737,0.00002982747,0.00009541537,0.0002390438,0.0000184889,0.00004352766],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.000155686,0.00008567049,0.04006396,0.000007934063,0.00005323598,0.000005434341,0.0001877326,0.001265425,0.9502793,0.005816179,0.0006614291,0.001418028],"study_design_scores_gemma":[0.007359112,0.0002213462,0.06944922,0.0002686309,0.0001561003,0.000007390244,0.000865903,0.0007452234,0.9010229,0.005139036,0.01229924,0.00246588],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9943412,0.000009230229,0.001168099,0.00009016437,0.0001719057,0.0001798723,0.000005147335,0.00004636188,0.003987997],"genre_scores_gemma":[0.9991387,0.000003053587,0.0001747128,0.0003199827,0.0002361792,0.00002214381,0.00003430775,0.00003484034,0.00003615421],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.04925636,"threshold_uncertainty_score":0.7693217,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2607223550","doi":"10.1103/physrevb.95.161402","title":"Short-range atomic ordering in nonequilibrium silicon-germanium-tin semiconductors","year":2017,"lang":"en","type":"article","venue":"Physical review. B./Physical review. B","topic":"Semiconductor materials and interfaces","field":"Physics and Astronomy","cited_by":30,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":true,"ca_fund":true,"ca_venue":false,"about_ca":false},"ca_institutions":"Polytechnique Montréal","funders":"Office of Naval Research; Natural Sciences and Engineering Research Council of Canada; Canada Research Chairs; National Science Foundation","keywords":"Germanium; Tin; Silicon; Semiconductor; Materials science; Non-equilibrium thermodynamics; Range (aeronautics); Silicon-germanium; Optoelectronics; Engineering physics; Metallurgy; Thermodynamics; Physics; Composite material","retraction":null,"screen_n_in":null,"score":{"opus":0.03109190233567898,"gpt":0.3772106941804021,"spread":0.3461187918447231,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":["metaepi_narrow","insufficient_payload"],"consensus_categories":[],"category_scores_codex":[0.0004994996,0.0008778561,0.002469277,0.00006224757,0.0002476924,0.000263974,0.001556344,0.00005987226,0.0006219015],"category_scores_gemma":[0.0001711162,0.0007265348,0.0009227389,0.000261727,0.0002842517,0.001080143,0.0006366547,0.0007239811,0.001208002],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.00009641062,"about_ca_system_score_gemma":0.00009390707,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.000311854,"about_ca_topic_score_gemma":0.000008400184,"domain_scores_codex":[0.9959071,0.0002714652,0.001113407,0.001148992,0.0005535503,0.001005479],"domain_scores_gemma":[0.9966869,0.0002102503,0.0006428255,0.001930822,0.0001539714,0.0003752289],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.00005183984,0.001981856,0.0392685,0.009358724,0.0003349007,0.00002780537,0.0003341977,0.000009727549,0.8167124,0.08626508,0.01053589,0.03511908],"study_design_scores_gemma":[0.003431117,0.0006715647,0.04981748,0.08241105,0.002320156,0.00002347832,0.0001533393,0.006743365,0.6208492,0.09254853,0.1329891,0.008041666],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.976579,0.01346182,0.00003547069,0.0009104793,0.0005256483,0.001360713,0.00008759503,0.00008168927,0.006957658],"genre_scores_gemma":[0.9845005,0.01224012,0.00002392544,0.0007577547,0.001909945,0.0002597604,0.00007175416,0.0001177878,0.0001184818],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.1958632,"threshold_uncertainty_score":0.9995697,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2026573518","doi":"10.1116/1.4789984","title":"Three dimensional reciprocal space measurement by x-ray diffraction using linear and area detectors: Applications to texture and defects determination in oriented thin films and nanoprecipitates","year":2013,"lang":"en","type":"article","venue":"Journal of Vacuum Science & Technology A Vacuum Surfaces and Films","topic":"Semiconductor materials and interfaces","field":"Physics and Astronomy","cited_by":28,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"Polytechnique Montréal; Regroupement Québécois sur les Matériaux de Pointe","funders":"","keywords":"Reciprocal lattice; Diffraction; Materials science; Optics; Scattering; Reciprocal; Detector; Texture (cosmology); Crystallography; Physics; Computer science; Chemistry; Artificial intelligence","retraction":null,"screen_n_in":null,"score":{"opus":0.01556785758280636,"gpt":0.2530706212421006,"spread":0.2375027636592942,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0005209048,0.000190282,0.0002880921,0.0003681689,0.000264121,0.0001401729,0.0001397243,0.0001112523,0.00003334841],"category_scores_gemma":[0.00004102446,0.0001430944,0.00002064353,0.0004353346,0.0003319557,0.0006589259,0.0001465608,0.0002417467,9.065059e-7],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.0000339728,"about_ca_system_score_gemma":0.00005344207,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.0001443095,"about_ca_topic_score_gemma":0.00001907937,"domain_scores_codex":[0.9987675,0.00002213283,0.0003518109,0.0003394523,0.0002565628,0.0002625274],"domain_scores_gemma":[0.9991339,0.00005565929,0.000282543,0.0001151173,0.00027881,0.0001339609],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.00001971274,0.000051444,0.04560446,0.000009999468,0.00001226962,5.279674e-7,0.0001941357,0.00005087774,0.9518719,0.00007462061,0.00006630625,0.002043742],"study_design_scores_gemma":[0.002638983,0.001945659,0.1846793,0.0008360727,0.0001605787,0.0001899404,0.007120466,0.1059339,0.6850305,0.009309595,0.0010262,0.001128822],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9956903,0.001080927,0.002240541,0.0004901099,0.0001168052,0.000351095,0.00001174464,0.00001346198,0.000004947597],"genre_scores_gemma":[0.9912189,0.00004916879,0.008650038,0.00002539803,0.00001821558,0.00002148008,9.59697e-7,0.000009415573,0.000006441267],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.2668414,"threshold_uncertainty_score":0.5835219,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2321969768","doi":"10.1021/jp408666q","title":"Pressure-Induced Changes on The Electronic Structure and Electron Topology in the Direct FCC → SH Transformation of Silicon","year":2013,"lang":"en","type":"article","venue":"The Journal of Physical Chemistry C","topic":"Semiconductor materials and interfaces","field":"Physics and Astronomy","cited_by":25,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"University of Ottawa; University of Saskatchewan","funders":"European Synchrotron Radiation Facility","keywords":"Silicon; Atomic orbital; Valence electron; Valence (chemistry); Molecular physics; Atom (system on chip); Hydrostatic pressure; Core electron; Electron; Materials science; Raman spectroscopy; Crystallography; Chemistry; Atomic physics; Physics; Optics","retraction":null,"screen_n_in":null,"score":{"opus":0.007961548127930063,"gpt":0.2417225791819457,"spread":0.2337610310540156,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0001711901,0.00009713632,0.0001738924,0.000007958383,0.00004048177,0.00002267788,0.0002416028,0.00002601205,0.0001609939],"category_scores_gemma":[0.000006858155,0.00004084397,0.00004447108,0.00004528149,0.00005650046,0.00006136425,0.00001065418,0.0002896946,6.340672e-7],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.000009049914,"about_ca_system_score_gemma":0.00001946223,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.00008485865,"about_ca_topic_score_gemma":0.000002531518,"domain_scores_codex":[0.9994306,0.00009935127,0.000155019,0.00005185858,0.0001136359,0.0001495193],"domain_scores_gemma":[0.9994792,0.0001728441,0.0001805949,0.0001150579,0.00003742845,0.00001482847],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.00003105834,0.00003849596,0.00002641396,0.00001284918,0.0000434928,2.590282e-8,0.001673219,0.00002288395,0.9965983,0.001003393,0.0000633569,0.0004864992],"study_design_scores_gemma":[0.0001664735,0.0001936645,0.0005546093,0.00001883569,0.0000400335,0.000003109311,0.0007835596,0.0001186401,0.9928409,0.005066145,0.0001689453,0.00004502578],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9971548,0.00009549786,7.592302e-7,0.001662851,0.00001813022,0.0001097779,0.000005868419,0.000001454668,0.00095091],"genre_scores_gemma":[0.9995911,0.000009750443,2.055719e-7,0.00005730586,0.000316171,0.000003985068,0.000001365857,0.000004916691,0.00001526641],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.004062751,"threshold_uncertainty_score":0.176277,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2052511155","doi":"10.1016/j.tsf.2012.10.113","title":"Determination of the dominant diffusing species during nickel and palladium germanide formation","year":2012,"lang":"en","type":"article","venue":"Thin Solid Films","topic":"Semiconductor materials and interfaces","field":"Physics and Astronomy","cited_by":24,"is_retracted":false,"has_abstract":false,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"Université de Montréal","funders":"","keywords":"Germanide; Germanium; Palladium; Rutherford backscattering spectrometry; Nickel; Diffusion; Chemistry; Ohmic contact; Analytical Chemistry (journal); Silicon; Metal; Phase (matter); Ion; Physical chemistry; Thermodynamics; Chromatography","retraction":null,"screen_n_in":null,"score":{"opus":0.01583859438437258,"gpt":0.2438415047620424,"spread":0.2280029103776698,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00009797346,0.00007174876,0.0001005348,0.00001656434,0.00008681328,0.0000313528,0.00006984083,0.00001912353,0.0002214223],"category_scores_gemma":[0.000002726796,0.00004764791,0.000030959,0.00002453802,0.00003732617,0.0003286675,0.00006672282,0.00004168792,0.000005585746],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.000008699774,"about_ca_system_score_gemma":0.000004076038,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.00004031931,"about_ca_topic_score_gemma":0.000001158931,"domain_scores_codex":[0.9995612,0.00001952764,0.0001651645,0.00005407968,0.0000692644,0.0001308008],"domain_scores_gemma":[0.9997066,0.00001081869,0.0001369026,0.0001051389,0.0000190365,0.00002146075],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.000004163026,0.00001750621,0.01073772,0.00002484606,0.000004848965,2.31182e-8,0.002619858,0.000002293747,0.9854155,0.0009317499,0.00006401063,0.0001774369],"study_design_scores_gemma":[0.0001578158,0.000005654381,0.06373192,0.00004455887,0.00001194274,0.00000188207,0.0007159622,0.0004083876,0.9345426,0.0002049711,0.0001113533,0.00006296038],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9976071,0.00005265189,0.0001383941,0.00002769149,0.0003619236,0.00008424024,0.00001443945,0.000005639436,0.001707941],"genre_scores_gemma":[0.9993206,0.000005025032,0.0001437219,0.00001013508,0.0001664328,0.000003703334,0.000004561203,0.000006635024,0.0003392217],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.0529942,"threshold_uncertainty_score":0.2424419,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2128313562","doi":"10.1109/led.2011.2160327","title":"Low Dark-Current Lateral Amorphous-Selenium Metal–Semiconductor–Metal Photodetector","year":2011,"lang":"en","type":"article","venue":"IEEE Electron Device Letters","topic":"Semiconductor materials and interfaces","field":"Physics and Astronomy","cited_by":23,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"University of Waterloo","funders":"","keywords":"Photodetector; Dark current; Optoelectronics; Materials science; Metal; Semiconductor; Current (fluid); Amorphous semiconductors; Silicon; Electrical engineering; Metallurgy; Engineering","retraction":null,"screen_n_in":null,"score":{"opus":0.02353118579253686,"gpt":0.244335212347123,"spread":0.2208040265545862,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":["metaepi_narrow","insufficient_payload"],"consensus_categories":[],"category_scores_codex":[0.0001780917,0.0005435445,0.0005388461,0.0001807955,0.0001361922,0.0001243615,0.000566546,0.00007599035,0.002916975],"category_scores_gemma":[0.000003645917,0.0004895153,0.0002866886,0.0002441492,0.0001105648,0.0005597007,0.00006061943,0.0004728803,0.0004900615],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.00008355339,"about_ca_system_score_gemma":0.00005945742,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.0005325293,"about_ca_topic_score_gemma":0.00001220413,"domain_scores_codex":[0.9973916,0.0001336945,0.0005382263,0.000679847,0.000280994,0.0009756446],"domain_scores_gemma":[0.9989438,0.00003141642,0.0002776769,0.000501791,0.00006970954,0.0001755972],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.00006517082,0.0001463037,0.001915894,0.00002611732,0.0002150786,0.00000318356,0.0004337343,0.000002975309,0.9913386,0.0001067287,0.005151326,0.0005948966],"study_design_scores_gemma":[0.0005504916,0.0001301044,0.0005673956,0.00004158007,0.0001087383,0.000006176613,0.00004045619,0.00001571287,0.9901802,0.0001492888,0.007613957,0.0005959144],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9951591,0.0002966596,0.0000988567,0.0001031322,0.002926122,0.0003522782,0.00006700314,0.0001500574,0.0008467829],"genre_scores_gemma":[0.9975633,0.00001179574,0.0001164132,0.0007879108,0.001122222,0.00008301288,0.00005149947,0.00009158096,0.0001722727],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.002462632,"threshold_uncertainty_score":0.9997556,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2502687813","doi":"10.1149/2.0961609jes","title":"Structural and Electrochemical Investigation of Fe<sub>x</sub>Si<sub>1-x</sub>Thin Films in Li Cells","year":2016,"lang":"en","type":"article","venue":"Journal of The Electrochemical Society","topic":"Semiconductor materials and interfaces","field":"Physics and Astronomy","cited_by":22,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":true,"ca_fund":true,"ca_venue":false,"about_ca":false},"ca_institutions":"Dalhousie University","funders":"Natural Sciences and Engineering Research Council of Canada; Killam Trusts","keywords":"Amorphous solid; Thin film; Materials science; Alloy; Electrochemistry; Sputtering; Phase (matter); Diffraction; Analytical Chemistry (journal); Crystallography; X-ray crystallography; Chemical engineering; Metallurgy; Nanotechnology; Chemistry; Electrode; Physical chemistry; Optics","retraction":null,"screen_n_in":null,"score":{"opus":0.007365766044378571,"gpt":0.2083651582162709,"spread":0.2009993921718923,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0002782952,0.0002271193,0.0004111992,0.00002679688,0.00006090982,0.00003923386,0.0003292491,0.0001455534,0.00003484497],"category_scores_gemma":[0.00003807028,0.0001340411,0.0003240402,0.0001646801,0.0002147419,0.0002272042,0.00009880605,0.000456179,0.000001684636],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.0001022992,"about_ca_system_score_gemma":0.0001161509,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.000006679096,"about_ca_topic_score_gemma":7.521337e-7,"domain_scores_codex":[0.9984185,0.00007954799,0.0006340832,0.000208696,0.0002873562,0.0003718252],"domain_scores_gemma":[0.998853,0.0001420766,0.0005881402,0.0001601659,0.000135795,0.00012087],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.00006004243,0.00002455816,0.003523706,0.0000188124,0.00008810233,1.491864e-7,0.0002581542,5.71651e-7,0.9945376,0.0000888226,0.001102912,0.0002965573],"study_design_scores_gemma":[0.0007306975,0.00008889643,0.001191613,0.0001421322,0.00004317521,0.00001114151,0.00007822478,0.00007968787,0.9907332,0.00671331,0.00002088553,0.0001670032],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9987066,0.0002030005,0.0002120815,0.000564977,0.0001758884,0.0001067205,0.000008710839,0.000006758637,0.00001527146],"genre_scores_gemma":[0.9990432,0.00008143086,0.0003592964,0.0001186253,0.0003642104,0.00000321642,0.000002923372,0.00002100031,0.000006112728],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.006624488,"threshold_uncertainty_score":0.5466037,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2603584484","doi":"10.1007/s12633-016-9513-x","title":"Structural, Electrical and Photoresponse Properties of Si-based Diode with Organic Interfacial Layer Containing Novel Cyclotriphosphazene Compound","year":2017,"lang":"en","type":"article","venue":"Silicon","topic":"Semiconductor materials and interfaces","field":"Physics and Astronomy","cited_by":22,"is_retracted":false,"has_abstract":false,"routes":{"ca_aff":false,"ca_fund":true,"ca_venue":false,"about_ca":false},"ca_institutions":"","funders":"Institute of Population and Public Health","keywords":"Materials science; Equivalent series resistance; Photocurrent; Photodiode; Diode; Optoelectronics; Photodetector; Ohmic contact; Photoactive layer; Capacitance; Active layer; Layer (electronics); Solar cell; Nanotechnology; Polymer solar cell; Electrode; Voltage; Physical chemistry","retraction":null,"screen_n_in":null,"score":{"opus":0.0301970820385049,"gpt":0.2526791657536838,"spread":0.2224820837151789,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00007735326,0.000169169,0.0002918464,0.00003030322,0.000186848,0.000167865,0.0001982391,0.0000368105,0.0002617376],"category_scores_gemma":[0.00002124543,0.0001180599,0.00003204128,0.00002387915,0.0001979442,0.0001723,0.00005932249,0.0000931001,0.000002617423],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.00001595868,"about_ca_system_score_gemma":0.00007357977,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.0007504508,"about_ca_topic_score_gemma":0.00001931142,"domain_scores_codex":[0.9992652,0.00002522242,0.0001995878,0.0002142191,0.0001020371,0.0001937298],"domain_scores_gemma":[0.9993796,0.00002853409,0.0002093046,0.0002567052,0.00007144061,0.00005436891],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.0009389225,0.00003324757,0.0411246,0.00001386971,0.00005233227,6.490641e-7,0.0002327562,0.000002947153,0.9569716,0.0002298097,0.000009291241,0.0003899781],"study_design_scores_gemma":[0.001378777,0.0003482572,0.01249587,0.00007952311,0.00002656358,0.000002303583,0.0001385558,0.0006985603,0.9844654,0.00003598572,0.0001586035,0.0001716114],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9992488,0.0001153004,0.00006676195,0.00004646253,0.0001295301,0.0001739151,0.00002989964,0.00001642181,0.0001729253],"genre_scores_gemma":[0.9997383,9.204028e-7,0.0000588573,0.00002838016,0.00009498413,0.000008840454,0.000004603112,0.00001984985,0.00004531387],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.02862873,"threshold_uncertainty_score":0.4814345,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2336320480","doi":"10.1149/2.0811607jes","title":"Electrochemistry of Cu<sub>x</sub>Si<sub>1−x</sub>Alloys in Li Cells","year":2016,"lang":"en","type":"article","venue":"Journal of The Electrochemical Society","topic":"Semiconductor materials and interfaces","field":"Physics and Astronomy","cited_by":22,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":true,"ca_fund":true,"ca_venue":false,"about_ca":false},"ca_institutions":"Dalhousie University","funders":"Natural Sciences and Engineering Research Council of Canada; Killam Trusts","keywords":"Nanocrystalline material; Materials science; Electrochemistry; Ternary operation; Lithium (medication); Amorphous solid; Thin film; Phase (matter); Alloy; Ball mill; Metallurgy; Chemical engineering; Analytical Chemistry (journal); Crystallography; Nanotechnology; Physical chemistry; Chemistry; Electrode","retraction":null,"screen_n_in":null,"score":{"opus":0.005493213959137116,"gpt":0.2075908006285697,"spread":0.2020975866694326,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0003421556,0.0002664515,0.0005034669,0.00002335808,0.00005813801,0.00003343067,0.0006195516,0.0001609341,0.00008921741],"category_scores_gemma":[0.00003440521,0.0001590897,0.0007063657,0.0002030962,0.0001441607,0.0001707434,0.0001172195,0.0005245231,0.000007634183],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.0001803726,"about_ca_system_score_gemma":0.0001863782,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.000005232455,"about_ca_topic_score_gemma":6.087427e-7,"domain_scores_codex":[0.9980766,0.00006366341,0.0007556828,0.000227925,0.0003602575,0.0005158269],"domain_scores_gemma":[0.998565,0.0001342179,0.0007318948,0.0002649532,0.0001853949,0.0001185725],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.00007143172,0.000163294,0.00119519,0.00002429667,0.0001621607,3.712847e-7,0.0001124749,6.933964e-7,0.9941905,0.00005012961,0.003436239,0.0005932247],"study_design_scores_gemma":[0.0008035499,0.0000929432,0.0001933406,0.0001865766,0.00005398499,0.000009205972,0.00007560821,0.00001005591,0.9956372,0.002455217,0.000282777,0.0001995165],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9981125,0.0002590973,0.0006080795,0.0005158363,0.0002344175,0.00009295613,0.00001134297,0.000008433045,0.0001573387],"genre_scores_gemma":[0.9987666,0.0001773443,0.0001575364,0.0001084053,0.0007230726,0.000004675628,0.00000177667,0.00003032725,0.00003024199],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.003153462,"threshold_uncertainty_score":0.6487491,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2005896632","doi":"10.1063/1.3529459","title":"Exploitation of a self-limiting process for reproducible formation of ultrathin Ni1−xPtx silicide films","year":2010,"lang":"en","type":"article","venue":"Applied Physics Letters","topic":"Semiconductor materials and interfaces","field":"Physics and Astronomy","cited_by":21,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"Polytechnique Montréal","funders":"","keywords":"Silicide; Materials science; Sputtering; Metal; Limiting; Substrate (aquarium); Thin film; Thermal stability; Chemical engineering; Nanotechnology; Metallurgy; Silicon","retraction":null,"screen_n_in":null,"score":{"opus":0.01893123857211207,"gpt":0.256005779554474,"spread":0.2370745409823619,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0001614168,0.000126098,0.000215316,0.00002731101,0.00004878944,0.00002075069,0.0001313342,0.0000270338,0.00003351216],"category_scores_gemma":[0.000008685471,0.0001225249,0.00006881654,0.00009150668,0.00003638052,0.0002623945,0.00001389301,0.00008597346,0.000003071269],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.000004303681,"about_ca_system_score_gemma":0.00001852771,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.00003394603,"about_ca_topic_score_gemma":5.351071e-7,"domain_scores_codex":[0.9991606,0.000008121969,0.0003434429,0.0002194598,0.0001147024,0.0001536534],"domain_scores_gemma":[0.9990416,0.0000660563,0.0005248798,0.0002476436,0.00009784787,0.00002202253],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.00002264173,0.00007651299,0.0004028648,0.0001485745,0.00002874077,1.022953e-8,0.002800609,0.0005316663,0.9854305,0.009599582,0.0003067465,0.0006514947],"study_design_scores_gemma":[0.0003473464,0.00002377555,0.00008562902,0.00002131607,0.00002900792,1.084374e-7,0.001158379,0.0003436623,0.9950524,0.002776568,0.00003925564,0.0001225407],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9938676,0.000001677807,0.004519477,0.0000568689,0.0001561336,0.0004116781,0.00004435834,0.00002745733,0.0009147509],"genre_scores_gemma":[0.9966508,2.517405e-7,0.002736364,0.00007857475,0.0002781705,0.0001373444,0.00009406001,0.00002078887,0.000003616924],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.009621854,"threshold_uncertainty_score":0.499642,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2085289441","doi":"10.1016/j.tsf.2005.09.180","title":"Dysprosium disilicide nanostructures on silicon(001) studied by scanning tunneling microscopy and transmission electron microscopy","year":2005,"lang":"en","type":"article","venue":"Thin Solid Films","topic":"Semiconductor materials and interfaces","field":"Physics and Astronomy","cited_by":20,"is_retracted":false,"has_abstract":false,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"University of Toronto","funders":"Division of Materials Research; National Science Foundation","keywords":"Silicide; Transmission electron microscopy; Scanning tunneling microscope; Materials science; Dysprosium; Silicon; High-resolution transmission electron microscopy; Nanostructure; Scanning electron microscope; Crystallography; Nanotechnology; Optoelectronics; Chemistry; Composite material; Inorganic chemistry","retraction":null,"screen_n_in":null,"score":{"opus":0.007425708672749177,"gpt":0.2846824694817945,"spread":0.2772567608090453,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.0001533265,0.0003581179,0.0003926147,0.00004862981,0.0002952521,0.000187143,0.0002099391,0.00009174165,0.0007328294],"category_scores_gemma":[0.000003249533,0.0002958814,0.00006779806,0.00006454606,0.00008842274,0.0001959902,0.00005292603,0.000261456,0.00003396395],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.00002930804,"about_ca_system_score_gemma":0.0000248392,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.0002983658,"about_ca_topic_score_gemma":0.0000023753,"domain_scores_codex":[0.9984301,0.00004535243,0.0003763837,0.0004849708,0.0001530283,0.0005101699],"domain_scores_gemma":[0.9994349,0.00003346286,0.0001415939,0.0002285084,0.00003607174,0.0001254455],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.00008588855,0.00007704621,0.0008582689,0.00001651867,0.0000478036,3.116605e-7,0.0009732848,0.00009525171,0.9845126,0.0001119232,0.01168487,0.001536232],"study_design_scores_gemma":[0.0007619972,0.0001927423,0.0003949332,0.0001096742,0.00003050012,0.000001579557,0.0002629939,0.0003417264,0.9919413,0.0002316242,0.005397335,0.0003336335],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9967444,0.001343278,0.00006636271,0.0003603857,0.0003118902,0.0002647514,0.00009349642,0.00006829282,0.0007471562],"genre_scores_gemma":[0.9977536,0.00005336927,0.000633386,0.0003666005,0.0003447967,0.00002001276,0.00009267505,0.00005018285,0.0006854233],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.007428656,"threshold_uncertainty_score":0.9999493,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W1979948797","doi":"10.1063/1.2734954","title":"Electron screening in nanostructures","year":2007,"lang":"en","type":"article","venue":"Journal of Applied Physics","topic":"Semiconductor materials and interfaces","field":"Physics and Astronomy","cited_by":19,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":true,"ca_fund":true,"ca_venue":false,"about_ca":false},"ca_institutions":"University of Toronto; McMaster University","funders":"Air Force Office of Scientific Research; Natural Sciences and Engineering Research Council of Canada","keywords":"Nanowire; Nanostructure; Materials science; Planar; Schottky barrier; Contact geometry; Nanotechnology; Charge carrier; Schottky diode; Biasing; Voltage; Electrical contacts; Optoelectronics; Condensed matter physics; Physics; Geometry","retraction":null,"screen_n_in":null,"score":{"opus":0.01033042704624628,"gpt":0.2547615267093339,"spread":0.2444310996630877,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0002010423,0.0000966589,0.0001943552,0.00004506309,0.00002405951,0.00003026434,0.0001291467,0.00002341189,0.00009870669],"category_scores_gemma":[9.814065e-7,0.00007919511,0.00006068783,0.00009624237,0.00001847632,0.0001032576,0.00001741627,0.0001884632,0.000003345017],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.00001225498,"about_ca_system_score_gemma":0.00002356831,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.00001737438,"about_ca_topic_score_gemma":9.021303e-7,"domain_scores_codex":[0.9992812,0.000005912093,0.000320731,0.00007009568,0.0001294469,0.000192638],"domain_scores_gemma":[0.9995534,0.00002856344,0.000269208,0.00006789737,0.00003987249,0.00004101666],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.0001529403,0.00004968029,0.00417934,0.000003408863,0.00005501081,0.000001808451,0.0003592417,0.00127093,0.9678715,0.01604887,0.0003212701,0.009685957],"study_design_scores_gemma":[0.0004557072,0.00004131829,0.004134621,0.00001957557,0.00001309531,0.00000146348,0.000349768,0.00002280662,0.9684482,0.02532431,0.001091693,0.00009739419],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9894149,0.00002951774,0.002102289,0.00000500618,0.000186853,0.00004162724,0.000001859695,0.000003142547,0.008214826],"genre_scores_gemma":[0.997955,0.000001462881,0.0009571967,0.00003623672,0.001024639,4.232122e-7,0.000001831509,0.00001163396,0.00001155352],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.009588562,"threshold_uncertainty_score":0.3229483,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2116469978","doi":"10.1116/1.2218874","title":"Epitaxial Bi∕GaAs diodes via electrodeposition","year":2006,"lang":"en","type":"article","venue":"Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena","topic":"Semiconductor materials and interfaces","field":"Physics and Astronomy","cited_by":19,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"Simon Fraser University","funders":"","keywords":"Materials science; Epitaxy; Diode; Crystallite; Optoelectronics; Gallium arsenide; Transmission electron microscopy; Layer (electronics); Nanotechnology; Metallurgy","retraction":null,"screen_n_in":null,"score":{"opus":0.007599123097119127,"gpt":0.2174132308666153,"spread":0.2098141077694961,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0006543718,0.0002404429,0.0003465302,0.0006639633,0.0004710891,0.0003241358,0.0003306298,0.00006876932,0.00002293957],"category_scores_gemma":[0.000006321692,0.0001812463,0.0000523134,0.0005867224,0.0004947787,0.0005028899,0.00007675976,0.0002769114,3.071515e-7],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.0001095409,"about_ca_system_score_gemma":0.0002364885,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.00001997671,"about_ca_topic_score_gemma":0.00000242792,"domain_scores_codex":[0.9982991,0.00002313414,0.0004809459,0.0003204184,0.0003634551,0.0005129255],"domain_scores_gemma":[0.9989152,0.000007207013,0.0004987209,0.0001205689,0.0003862935,0.00007199016],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.00003621316,0.00003919599,0.002990636,0.00001836817,0.00003119063,6.272529e-7,0.00007923115,0.000002788214,0.9668258,0.003842996,0.0000191988,0.02611369],"study_design_scores_gemma":[0.0006636414,0.0006244132,0.00264425,0.00006043853,0.00008205047,0.00009749233,0.0001176222,0.00009256569,0.8731236,0.1215714,0.0006378876,0.0002846415],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9842339,0.01039042,0.004653884,0.0002716634,0.0001710926,0.00009928754,0.000003148902,0.00001841792,0.0001581514],"genre_scores_gemma":[0.9985184,0.00006719703,0.001090454,0.0000245728,0.0002680241,0.000003598122,0.000001334086,0.00001401286,0.00001237913],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.1177284,"threshold_uncertainty_score":0.7391008,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2001873824","doi":"10.1109/iedm.2007.4418888","title":"Extendibility of NiPt Silicide Contacts for CMOS Technology Demonstrated to the 22-nm Node","year":2007,"lang":"en","type":"article","venue":"","topic":"Semiconductor materials and interfaces","field":"Physics and Astronomy","cited_by":19,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"Advanced Micro Devices (Canada)","funders":"","keywords":"Silicide; CMOS; Node (physics); Physics; Optoelectronics; Silicon; Quantum mechanics","retraction":null,"screen_n_in":null,"score":{"opus":0.01609896230532845,"gpt":0.2921047934499494,"spread":0.276005831144621,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0002914351,0.0001052721,0.0001878928,0.00004225896,0.00005243647,0.00001695515,0.000206748,0.00004658549,0.0007665697],"category_scores_gemma":[0.00002333807,0.00006634499,0.00005549035,0.0001191818,0.00005864319,0.00004764339,0.00004445308,0.0000529412,0.00002111624],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.00001057611,"about_ca_system_score_gemma":0.00002583013,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.0005004277,"about_ca_topic_score_gemma":0.00005988753,"domain_scores_codex":[0.9992213,0.00001135696,0.0002902858,0.0001832904,0.00005598251,0.0002378239],"domain_scores_gemma":[0.9994041,0.00008600024,0.00008272111,0.0002756541,0.0001093257,0.00004221528],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.00006075546,0.00007275898,0.01729933,0.000006795246,0.00003857179,1.015591e-7,0.00007165161,0.000008095095,0.9577426,0.01881109,0.001345543,0.004542744],"study_design_scores_gemma":[0.0002485704,0.00009724985,0.003839492,0.00001026554,0.00001222892,4.307787e-7,0.001035632,0.00003252607,0.9868187,0.002957216,0.004862066,0.00008556689],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9833732,0.00002159679,0.009583563,0.0004233233,0.0002075756,0.0004356215,0.00005224075,0.00003256069,0.005870329],"genre_scores_gemma":[0.9984347,2.415776e-7,0.001044042,0.0001219711,0.00008941413,0.00002341022,0.000007771823,0.000009053401,0.0002693488],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.02907619,"threshold_uncertainty_score":0.83934,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2059672871","doi":"10.1103/physrevb.67.193307","title":"Stability of Sb line structures on Si(001)","year":2003,"lang":"en","type":"article","venue":"Physical review. B, Condensed matter","topic":"Semiconductor materials and interfaces","field":"Physics and Astronomy","cited_by":18,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"Hatch (Canada)","funders":"","keywords":"Materials science; Stability (learning theory); Line (geometry); Condensed matter physics; Physics; Computer science; Mathematics; Geometry","retraction":null,"screen_n_in":null,"score":{"opus":0.02556193052298584,"gpt":0.3159850867348797,"spread":0.2904231562118939,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":["insufficient_payload"],"consensus_categories":[],"category_scores_codex":[0.0001305849,0.000222491,0.0005409767,0.00001707034,0.00003177775,0.00002339153,0.0001562995,0.00002170056,0.0223124],"category_scores_gemma":[0.00002516265,0.0001644033,0.0001783811,0.00007076316,0.00008445864,0.00007845776,0.0000313806,0.0001418647,0.0004880174],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.00001137838,"about_ca_system_score_gemma":0.00002314237,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.00003487544,"about_ca_topic_score_gemma":2.993024e-7,"domain_scores_codex":[0.9987932,0.0001490858,0.0003597949,0.0002945875,0.0001793605,0.0002239357],"domain_scores_gemma":[0.9991128,0.0001147965,0.0001821693,0.000427541,0.00009042418,0.00007225131],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.00002965191,0.0004890525,0.002582862,0.0006758096,0.00009981673,6.898925e-7,0.0000959489,0.000002383324,0.9296001,0.04870851,0.01673234,0.0009828814],"study_design_scores_gemma":[0.0003687456,0.0001068781,0.0007375967,0.0002708607,0.00006702881,5.7978e-7,0.00002677685,0.000006856442,0.9457322,0.03908985,0.0133539,0.0002386736],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9861488,0.0004902995,0.00003351047,0.0002458228,0.0001960365,0.0002736866,0.00007983405,0.00001342306,0.01251862],"genre_scores_gemma":[0.9979695,0.00003130883,0.00004262657,0.001584905,0.0001793887,0.00002239933,0.0000240502,0.00002210445,0.000123683],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.02182439,"threshold_uncertainty_score":0.9785813,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2084004487","doi":"10.1063/1.2161849","title":"Epitaxial Bi∕GaAs(111) diodes via electrodeposition","year":2006,"lang":"en","type":"article","venue":"Applied Physics Letters","topic":"Semiconductor materials and interfaces","field":"Physics and Astronomy","cited_by":17,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"Simon Fraser University","funders":"","keywords":"Epitaxy; Bismuth; Materials science; Diode; Optoelectronics; Trigonal crystal system; Electrolyte; Leakage (economics); Single crystal; Crystallography; Nanotechnology; Crystal structure; Chemistry; Metallurgy; Electrode; Layer (electronics); Physical chemistry","retraction":null,"screen_n_in":null,"score":{"opus":0.005469109687717303,"gpt":0.1965545232754996,"spread":0.1910854135877823,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00004556417,0.0002347274,0.0002223819,0.00002591512,0.0001289163,0.0001142236,0.0001639672,0.00003123294,0.0002296004],"category_scores_gemma":[1.680868e-7,0.0002287174,0.00009823307,0.0001042505,0.00006448859,0.0001539174,0.00003535008,0.0001229898,0.0001997786],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.00002856986,"about_ca_system_score_gemma":0.000009969086,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.0005969771,"about_ca_topic_score_gemma":0.000001355239,"domain_scores_codex":[0.998925,0.00001968214,0.0002289113,0.0003127216,0.000153377,0.0003603663],"domain_scores_gemma":[0.9995685,0.00002246247,0.0001242119,0.0002274583,0.00001945806,0.00003794729],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.0000216836,0.0000759701,0.0004984505,0.000006002533,0.00003953057,4.147591e-7,0.00004447744,0.0003441948,0.9543846,0.03831696,0.004640957,0.001626797],"study_design_scores_gemma":[0.0003642217,0.0000216324,0.0006332203,0.000006989129,0.00003259871,4.652398e-7,0.0000211335,0.00006251755,0.985079,0.01238564,0.00107497,0.0003175989],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9642168,0.00001191255,0.02606051,0.0001852065,0.0002474,0.000174929,0.00002515899,0.00007424013,0.009003873],"genre_scores_gemma":[0.9963405,4.249361e-7,0.0003180901,0.0004722295,0.002501476,0.00005990556,0.0002234606,0.00003887776,0.00004510597],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.03212366,"threshold_uncertainty_score":0.9326824,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W3103604630","doi":"10.1038/s41598-018-24387-y","title":"Gunn-Hilsum Effect in Mechanically Strained Silicon Nanowires: Tunable Negative Differential Resistance","year":2018,"lang":"en","type":"article","venue":"Scientific Reports","topic":"Semiconductor materials and interfaces","field":"Physics and Astronomy","cited_by":17,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"University of Waterloo","funders":"Division of Electrical, Communications and Cyber Systems; Vetenskapsrådet; National Science Foundation","keywords":"Gunn diode; Effective mass (spring–mass system); Electron; Silicon; Electric field; Semiconductor; Condensed matter physics; Band gap; Oscillation (cell signaling); Electron mobility; Materials science; Atomic physics; Chemistry; Optoelectronics; Physics; Diode","retraction":null,"screen_n_in":null,"score":{"opus":0.008970018100763734,"gpt":0.2475020163696246,"spread":0.2385319982688609,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":["insufficient_payload"],"consensus_categories":[],"category_scores_codex":[0.0007413565,0.0002097579,0.000318008,0.00009816749,0.0002308532,0.0004144902,0.0001976977,0.00005351895,0.003544237],"category_scores_gemma":[0.00006683842,0.0001696954,0.00009687836,0.0002640818,0.0002736512,0.0002635184,0.00009790382,0.0001005694,0.0000681616],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.00003844763,"about_ca_system_score_gemma":0.00009298223,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.0002285283,"about_ca_topic_score_gemma":0.000132928,"domain_scores_codex":[0.9978587,0.000108689,0.0005415409,0.000771763,0.0002991488,0.0004201764],"domain_scores_gemma":[0.9988284,0.0000525259,0.0002782101,0.0006117043,0.0001351067,0.00009408208],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.00004891159,0.00007254455,0.00237835,0.00001673035,0.00002397731,0.00001773082,0.0003949032,8.081681e-7,0.9890454,0.001203583,0.00644879,0.0003482281],"study_design_scores_gemma":[0.0003052792,0.00008778464,0.001016925,0.0001113989,0.00001287789,0.000001601531,0.0001349888,0.00003521228,0.9502301,0.04520587,0.002649316,0.0002086243],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9843854,0.0000195694,0.000109489,0.00004346722,0.007237683,0.0003456682,0.00001192601,0.00003983609,0.007806928],"genre_scores_gemma":[0.9932933,2.191833e-7,0.00008248888,0.00001089897,0.0003631016,0.00003649543,0.00003320088,0.00001815454,0.006162177],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.04400229,"threshold_uncertainty_score":0.9973667,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2316329631","doi":"10.1021/jp404444p","title":"Spatially Sequential Growth of Various WSi<sub>2</sub> Networked Nanostructures and Mechanisms","year":2013,"lang":"en","type":"article","venue":"The Journal of Physical Chemistry C","topic":"Semiconductor materials and interfaces","field":"Physics and Astronomy","cited_by":17,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"Western University","funders":"","keywords":"Nanostructure; Nanorod; Materials science; Nanotechnology; Chemical vapor deposition; Electrochemistry; Transmission electron microscopy; Scanning electron microscope; Chemical engineering; Electrode; Chemistry","retraction":null,"screen_n_in":null,"score":{"opus":0.005216262207195097,"gpt":0.2006284626165694,"spread":0.1954122004093743,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00009731699,0.0001434829,0.0002831609,0.000008617489,0.00004871617,0.00004452962,0.0002338022,0.00003312252,0.0002544742],"category_scores_gemma":[0.000008254673,0.00008786206,0.0001020143,0.00004072884,0.0001045703,0.0001257207,0.00007227397,0.0001763913,0.000003191018],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.000008360385,"about_ca_system_score_gemma":0.00003611267,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.00009180821,"about_ca_topic_score_gemma":1.53449e-7,"domain_scores_codex":[0.9992684,0.00004179044,0.0002842664,0.00008082643,0.0001726046,0.0001521213],"domain_scores_gemma":[0.9991984,0.00006575834,0.000392591,0.0001154479,0.0001553665,0.00007247744],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.00003410504,0.00004416496,0.00002945796,0.00002266753,0.00009902342,3.981412e-7,0.0001828835,0.0000596091,0.9980908,0.0006747048,0.000269522,0.0004926737],"study_design_scores_gemma":[0.0002804121,0.00007963349,0.000146019,0.00003637439,0.00007557136,0.000009653506,0.0000797947,0.000211658,0.954213,0.04477154,0.000007305152,0.00008901905],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9989795,0.0000340043,0.0004091922,0.00006458641,0.0001101979,0.0000592615,0.00001068917,0.000003942065,0.0003285969],"genre_scores_gemma":[0.9989683,0.000004337496,0.00005268639,0.00001723552,0.0009272252,0.00000134256,0.000002561169,0.00001294362,0.00001338682],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.04409684,"threshold_uncertainty_score":0.3582911,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2083828335","doi":"10.1007/s00339-006-3761-3","title":"Ab initio characterization of arsenic vacancy diffusion pathways in GaAs with SIEST-A-RT","year":2006,"lang":"en","type":"article","venue":"Applied Physics A","topic":"Semiconductor materials and interfaces","field":"Physics and Astronomy","cited_by":16,"is_retracted":false,"has_abstract":false,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"Université de Montréal; Regroupement Québécois sur les Matériaux de Pointe","funders":"","keywords":"Vacancy defect; Arsenic; Diffusion; Ab initio; Characterization (materials science); Charge (physics); Materials science; Semiconductor; Chemical physics; Chemistry; Condensed matter physics; Nanotechnology; Crystallography; Physics; Optoelectronics; Thermodynamics; Metallurgy; Quantum mechanics","retraction":null,"screen_n_in":null,"score":{"opus":0.008638360084746374,"gpt":0.1888478961345725,"spread":0.1802095360498261,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00003366353,0.0001533969,0.0002306287,0.00003044314,0.00003134925,0.0000275114,0.00009143586,0.00002902448,0.0001421916],"category_scores_gemma":[2.070851e-7,0.0001325083,0.00003183043,0.0001482063,0.00003738441,0.0001036336,0.00003283402,0.00007310115,0.00001725066],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.00001192634,"about_ca_system_score_gemma":0.00003121566,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.0002829547,"about_ca_topic_score_gemma":0.000003913188,"domain_scores_codex":[0.9992628,0.00001113003,0.000245818,0.0001943826,0.0001145783,0.0001713322],"domain_scores_gemma":[0.999576,0.00001479601,0.0001853248,0.0001708869,0.00003275653,0.00002024291],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.00003067791,0.0002015424,0.006518031,0.00001510159,0.00001057851,2.546179e-7,0.0001437792,0.00004118087,0.9263275,0.0654474,0.00001837321,0.001245639],"study_design_scores_gemma":[0.0008692939,0.00004873013,0.03293602,0.00006116448,0.00001631158,1.764597e-7,0.0001129346,0.0001035124,0.9487265,0.01657147,0.0003181362,0.0002357357],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9876736,0.000004074794,0.000554223,0.000005562783,0.00005924001,0.0002081433,0.00007992469,0.00001787861,0.01139728],"genre_scores_gemma":[0.9991601,0.000002350355,0.00006753189,0.00001877657,0.0002955488,0.00005662245,0.0003388978,0.0000247866,0.00003544369],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.04887593,"threshold_uncertainty_score":0.5403532,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2108674896","doi":"10.1103/physrevb.74.205207","title":"Charge-dependent migration pathways for the Ga vacancy in<mml:math xmlns:mml=\"http://www.w3.org/1998/Math/MathML\" display=\"inline\"><mml:mrow><mml:mi>GaAs</mml:mi></mml:mrow></mml:math>","year":2006,"lang":"lv","type":"article","venue":"Physical Review B","topic":"Semiconductor materials and interfaces","field":"Physics and Astronomy","cited_by":16,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"Université de Montréal; Regroupement Québécois sur les Matériaux de Pointe","funders":"","keywords":"Charge (physics); Vacancy defect; Relaxation (psychology); Ab initio; Diffusion; Materials science; Physics; Condensed matter physics; Algorithm; Thermodynamics; Computer science; Quantum mechanics","retraction":null,"screen_n_in":null,"score":{"opus":0.02244692185213206,"gpt":0.2619935701624781,"spread":0.239546648310346,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":["metaepi_narrow","insufficient_payload"],"consensus_categories":["insufficient_payload"],"category_scores_codex":[0.0004382519,0.0003430284,0.0002857583,0.00003110764,0.0002971659,0.0003287918,0.0005065575,0.0001743393,0.002410672],"category_scores_gemma":[0.00009883459,0.0003663026,0.000688651,0.0001706662,0.0001398238,0.0003799305,0.0002445862,0.0003476921,0.001048196],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.000009465947,"about_ca_system_score_gemma":0.0001970561,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.0008648565,"about_ca_topic_score_gemma":0.0001188274,"domain_scores_codex":[0.9975901,0.00009653362,0.0007042885,0.000545724,0.0004588359,0.0006045056],"domain_scores_gemma":[0.9982065,0.0003545261,0.0006205616,0.0006320569,0.00005559547,0.0001307577],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"theoretical_or_conceptual","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.0000719614,0.0002898039,0.00001014891,0.001171654,0.0001563943,0.000008988764,0.0002902094,0.00005585149,0.02056569,0.9685538,0.006325263,0.002500278],"study_design_scores_gemma":[0.001008338,0.0008036881,0.0002643156,0.004910183,0.001087339,0.00002215854,0.000424959,0.323716,0.6285222,0.0018908,0.03640747,0.0009425984],"study_design_candidate":"theoretical_or_conceptual","study_design_consensus":null,"genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.982121,0.007763531,0.0001762976,0.0005733199,0.0009293334,0.0001146146,0.0002854637,0.00003278196,0.008003667],"genre_scores_gemma":[0.9917455,0.003710298,0.00009130464,0.0004829348,0.002548126,0.0007925307,0.0004252009,0.0001096483,0.00009450462],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.9666629,"threshold_uncertainty_score":0.9998789,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W4392298465","doi":"10.1007/s10854-024-12243-x","title":"Novel PANI:Borophene/Si Schottky device for the sensitive detection of illumination and NaCl salt solutions","year":2024,"lang":"en","type":"article","venue":"Journal of Materials Science Materials in Electronics","topic":"Semiconductor materials and interfaces","field":"Physics and Astronomy","cited_by":15,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"University of Waterloo","funders":"Hitit Üniversitesi; Türkiye Bilimsel ve Teknolojik Araştırma Kurumu","keywords":"Borophene; Salt (chemistry); Materials science; Optoelectronics; Nanotechnology; Chemistry; Graphene","retraction":null,"screen_n_in":null,"score":{"opus":0.01816639100432864,"gpt":0.2753411164225579,"spread":0.2571747254182293,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.002983878,0.0001604009,0.0003515001,0.0002059888,0.0001952804,0.0004561675,0.0002630044,0.00005044283,0.00006206642],"category_scores_gemma":[0.00009839748,0.000110462,0.00004977345,0.0002628933,0.0002789551,0.0006774204,0.00007434595,0.00009280464,0.000001903222],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.0001287184,"about_ca_system_score_gemma":0.0003441467,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.0001571903,"about_ca_topic_score_gemma":0.00001349195,"domain_scores_codex":[0.9983376,0.00007973985,0.0007393761,0.0002136713,0.000257579,0.0003720704],"domain_scores_gemma":[0.9988252,0.0001851117,0.0004593508,0.0001304725,0.0003586259,0.00004125731],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.00009037916,0.00003304493,0.000004420866,0.00006047795,0.00003172013,3.672007e-7,0.0003207736,0.00005765399,0.9916949,0.006288589,0.000007761446,0.001409934],"study_design_scores_gemma":[0.0002919928,0.0002775912,0.0002900308,0.0001742805,0.00005928073,0.00003431607,0.0005879482,0.0002328814,0.9952049,0.002342373,0.000387523,0.0001169181],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9927703,0.0006297071,0.003288251,0.0001586469,0.002709784,0.0002779499,0.0001404026,0.000008744893,0.00001618077],"genre_scores_gemma":[0.9988747,0.0001236401,0.0004439826,0.00001747338,0.0004936005,0.00001559816,0.00000325848,0.00001803369,0.000009690556],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.00610439,"threshold_uncertainty_score":0.4504511,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2002634059","doi":"10.1016/j.physb.2007.09.029","title":"High resolution photoluminescence of sulphur- and copper-related isoelectronic bound excitons in highly enriched 28Si","year":2007,"lang":"en","type":"article","venue":"Physica B Condensed Matter","topic":"Semiconductor materials and interfaces","field":"Physics and Astronomy","cited_by":15,"is_retracted":false,"has_abstract":false,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"Simon Fraser University","funders":"","keywords":"Copper; Photoluminescence; Chemistry; Exciton; Sulfur; Atom (system on chip); Isotope; Silicon; Atomic physics; Analytical Chemistry (journal); Resolution (logic); Materials science; Condensed matter physics; Physics","retraction":null,"screen_n_in":null,"score":{"opus":0.007086237009531231,"gpt":0.2317440521209907,"spread":0.2246578151114594,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0001346187,0.000188697,0.0003191936,0.00008460789,0.00004147736,0.00003722545,0.0001199325,0.000053378,0.0005331814],"category_scores_gemma":[0.000001688664,0.0001848,0.00005001258,0.0001615099,0.0001451368,0.0001732394,0.00004152956,0.000143274,0.00006116008],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.00003560431,"about_ca_system_score_gemma":0.00002909228,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.0009492246,"about_ca_topic_score_gemma":0.00002437808,"domain_scores_codex":[0.9988503,0.00003580387,0.0003794963,0.0002596859,0.0001125607,0.0003621901],"domain_scores_gemma":[0.999486,0.00006751148,0.0001338065,0.0002081945,0.00005268169,0.00005181668],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.00004343806,0.00008903202,0.006272057,0.00002455614,0.00003743061,9.912414e-7,0.0002757569,0.000004653772,0.9881691,0.002908539,0.002078565,0.00009582192],"study_design_scores_gemma":[0.00101037,0.00008123294,0.03442977,0.00005135375,0.00002701177,0.000001704789,0.0001621373,0.0000705011,0.9597226,0.003787362,0.0003857997,0.0002701556],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9971729,0.0001274063,0.00003514787,0.0001645139,0.0001931113,0.0001819893,0.00002039564,0.00002280606,0.002081747],"genre_scores_gemma":[0.9993951,0.000005473057,0.00004040594,0.00007982357,0.00009348804,0.00001180332,0.00002821479,0.00002433336,0.0003213222],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.02844656,"threshold_uncertainty_score":0.7535926,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W1984374849","doi":"10.1139/cjp-2014-0628","title":"Electrical and dielectric properties of Au/1% graphene (GP)+Ca<sub>1.9</sub>Pr<sub>0.1</sub>Co<sub>4</sub>O<sub><i>x</i></sub> doped poly(vinyl alcohol)/n-Si structures as function of temperature and voltage","year":2015,"lang":"en","type":"article","venue":"Canadian Journal of Physics","topic":"Semiconductor materials and interfaces","field":"Physics and Astronomy","cited_by":15,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":false,"ca_fund":false,"ca_venue":true,"about_ca":false},"ca_institutions":"","funders":"","keywords":"Dielectric; Vinyl alcohol; Analytical Chemistry (journal); Electrical resistivity and conductivity; Doping; Condensed matter physics; Electric field; Permittivity; Physics; Materials science; Nuclear magnetic resonance; Chemistry; Polymer; Optoelectronics","retraction":null,"screen_n_in":null,"score":{"opus":0.01465015405800144,"gpt":0.2098927288755618,"spread":0.1952425748175604,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.0004046101,0.0007120661,0.001158028,0.0004725817,0.0003145911,0.0002944029,0.0004031581,0.0002925203,0.00001583274],"category_scores_gemma":[0.00007480128,0.0006157959,0.0003247201,0.0006947999,0.0004207624,0.0009184267,0.00006299093,0.0008348205,0.000008045737],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.0002130818,"about_ca_system_score_gemma":0.001837368,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.001200063,"about_ca_topic_score_gemma":0.0007255941,"domain_scores_codex":[0.9966235,0.0002177081,0.001080627,0.000560914,0.0005792619,0.0009379949],"domain_scores_gemma":[0.996628,0.00007062358,0.001026467,0.0004078362,0.0007912216,0.001075779],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.0003273704,0.00008795512,0.002875207,0.0001075454,0.0004715958,0.00001612116,0.0008891283,0.00004369178,0.9722397,0.001041164,0.002263655,0.01963688],"study_design_scores_gemma":[0.001569839,0.001035305,0.006231538,0.0002469615,0.000337817,0.0000579127,0.0005053935,0.00004735096,0.9840308,0.005110167,0.000200111,0.0006267702],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9947962,0.003452763,0.00009312284,0.00008686777,0.0007670462,0.0003899885,0.0002236828,0.00001783203,0.0001725416],"genre_scores_gemma":[0.9979805,0.0002299392,0.00001756381,0.0001366092,0.001459201,0.00001345904,0.00005211069,0.0001038983,0.000006672665],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.01901011,"threshold_uncertainty_score":0.9996293,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2413160354","doi":"10.1149/1.2968110","title":"Effect of Annealing on Sn[sub 30]Co[sub 30]C[sub 40] Prepared by Mechanical Attriting","year":2008,"lang":"en","type":"article","venue":"Electrochemical and Solid-State Letters","topic":"Semiconductor materials and interfaces","field":"Physics and Astronomy","cited_by":15,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"Dalhousie University","funders":"","keywords":"Materials science; Annealing (glass); Diffraction; Amorphous solid; Crystallization; Electrochemistry; X-ray crystallography; Analytical Chemistry (journal); Amorphous metal; Crystallography; Composite material; Chemical engineering; Electrode; Optics; Chemistry","retraction":null,"screen_n_in":null,"score":{"opus":0.007619751806059381,"gpt":0.2451995472955002,"spread":0.2375797954894408,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.000193202,0.0003555696,0.0005747509,0.00004622082,0.0001522428,0.00004437451,0.0001846016,0.00008133089,0.0001113689],"category_scores_gemma":[0.00002226618,0.0003053303,0.0001514371,0.00008473379,0.0001275271,0.000109699,0.00005837287,0.0003110085,0.00002212918],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.00003513116,"about_ca_system_score_gemma":0.00001849631,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.0000368287,"about_ca_topic_score_gemma":1.201726e-7,"domain_scores_codex":[0.9980617,0.0001288697,0.000466619,0.0005013556,0.0002339493,0.0006075348],"domain_scores_gemma":[0.9992169,0.0002136075,0.0001837747,0.0001990176,0.00003337937,0.0001533896],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.0002461184,0.00005762219,0.0003916748,0.00006052099,0.00009590211,0.000004498143,0.0001519487,0.000005041722,0.9918604,0.00002436364,0.006631449,0.0004704795],"study_design_scores_gemma":[0.0008929066,0.0004721422,0.00002265978,0.00008341,0.00003152627,0.000007171521,0.00001428625,0.0001599168,0.9975682,0.0001349168,0.0002960835,0.0003167996],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9987898,0.0001423752,0.0002514807,0.0002380557,0.0000831916,0.0002288956,0.0000522038,0.00005600134,0.0001579934],"genre_scores_gemma":[0.9989965,0.00005217766,0.00002634697,0.0004778946,0.0002566703,0.00003110054,0.0001035037,0.00004047985,0.00001531029],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.006335365,"threshold_uncertainty_score":0.9999399,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W1980082059","doi":"10.1039/c4ta06210h","title":"Ultrafast palladium diffusion in germanium","year":2015,"lang":"en","type":"article","venue":"Journal of Materials Chemistry A","topic":"Semiconductor materials and interfaces","field":"Physics and Astronomy","cited_by":15,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"Kootenay Association for Science & Technology","funders":"","keywords":"Germanium; Palladium; Diffusion; Ultrashort pulse; Chemical physics; Materials science; Mechanism (biology); Engineering physics; Atomic physics; Chemistry; Thermodynamics; Optoelectronics; Optics; Physics; Quantum mechanics; Silicon; Organic chemistry","retraction":null,"screen_n_in":null,"score":{"opus":0.01806735407368383,"gpt":0.2472577344518175,"spread":0.2291903803781337,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":["insufficient_payload"],"consensus_categories":[],"category_scores_codex":[0.0003323435,0.0001206264,0.000294985,0.00002325386,0.00001298882,0.00008279304,0.0001840498,0.00004582379,0.002270821],"category_scores_gemma":[0.000007886555,0.00009517559,0.0000481227,0.00003709427,0.00002288903,0.0001580434,0.00003775618,0.00008457708,0.0000203025],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.00003452816,"about_ca_system_score_gemma":0.00006815964,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.00004512509,"about_ca_topic_score_gemma":1.837852e-7,"domain_scores_codex":[0.9990664,0.00003387318,0.0005036871,0.00008841903,0.0001502778,0.0001573698],"domain_scores_gemma":[0.999314,0.00001329335,0.0003625826,0.0001039487,0.00009956243,0.0001066897],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.00009076297,0.00008040648,0.001732313,0.0000214642,0.00001511587,0.000008388283,0.0002039886,0.0000116383,0.9971024,0.00002490467,0.0006860723,0.0000225085],"study_design_scores_gemma":[0.0008105701,0.00002961287,0.0005234483,0.00008355072,0.000009615937,0.000027556,0.0004530943,9.443423e-7,0.9960536,0.0002482456,0.001657947,0.0001018524],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9950166,0.00002978316,0.000008218711,0.00007799795,0.0007506032,0.00003201429,0.00002110324,0.000004646682,0.004058971],"genre_scores_gemma":[0.9984865,0.000004630797,0.00003075715,0.00001665338,0.001219619,0.000001586105,0.000007460324,0.00001201202,0.0002207957],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.003838175,"threshold_uncertainty_score":0.9986413,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W1997511908","doi":"10.1021/jp0554341","title":"Chemical Bonding, Electron−Phonon Coupling, and Structural Transformations in High-Pressure Phases of Si","year":2006,"lang":"en","type":"article","venue":"The Journal of Physical Chemistry B","topic":"Semiconductor materials and interfaces","field":"Physics and Astronomy","cited_by":15,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"Steacie Institute for Molecular Sciences; University of Saskatchewan","funders":"","keywords":"Coupling (piping); Materials science; Electron; Condensed matter physics; High pressure; Phonon; Chemical bond; Chemical physics; Crystallography; Chemistry; Physics; Engineering physics; Composite material; Quantum mechanics","retraction":null,"screen_n_in":null,"score":{"opus":0.004553715684305094,"gpt":0.2345880985297018,"spread":0.2300343828453967,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00007107235,0.0001007265,0.0002278652,0.00001164242,0.00002663494,0.00001767267,0.0001433323,0.00002258542,0.0001266521],"category_scores_gemma":[0.000003345433,0.00006564024,0.00006171879,0.00004984692,0.00008059177,0.0001249471,0.00001514271,0.0001740349,2.619161e-7],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.000009440751,"about_ca_system_score_gemma":0.00002199959,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.0001075477,"about_ca_topic_score_gemma":3.404434e-7,"domain_scores_codex":[0.9994171,0.000008752028,0.0002844748,0.00005406749,0.0001122489,0.0001233301],"domain_scores_gemma":[0.9995844,0.00005627729,0.0002149976,0.00007003862,0.00004667588,0.00002755548],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.00004814109,0.00006457391,0.0005425634,0.00002366128,0.00003016892,1.556761e-7,0.0001521539,0.0004350817,0.9980844,0.0004459866,0.0001354509,0.00003770311],"study_design_scores_gemma":[0.0005004311,0.00003070639,0.0003751127,0.00003758229,0.00006072154,0.000004402648,0.0001039874,0.0007460818,0.9941148,0.003869642,0.00008796689,0.00006859269],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9992993,0.0001651893,0.00001827555,0.00005698085,0.0000208802,0.00003329037,0.0000273173,0.00000256138,0.0003761532],"genre_scores_gemma":[0.9994766,0.000002200678,0.00001394679,0.000002513003,0.0004510858,7.56927e-7,0.000007440734,0.000006278566,0.00003916786],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.003969587,"threshold_uncertainty_score":0.2676731,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null}]}