{"meta":{"page":1,"per_page":50,"max_per_page":100,"total":45,"total_is_capped":false,"direct_labels_cover":0,"predictions_cover":45,"direct_label_status":"direct model label, unvalidated","prediction_status":"machine_predicted_unvalidated (Codex and Gemma teacher distillation)","score_status":"score_only:v0-immature-baseline (scores rank; they never assert a category)","snapshot":{"source":"OpenAlex, pinned release, all 482 partitions","release":"2026-06-24","frame_built":"2026-07-12"},"query_hash":"2a9d5b345905","filters":{"venue":"Solid-State Electronics"}},"results":[{"id":"W2114574737","doi":"10.1016/j.sse.2005.02.004","title":"Accurate modeling and parameter extraction method for organic TFTs","year":2005,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":153,"is_retracted":false,"has_abstract":false,"routes":{"ca_aff":false,"ca_fund":true,"ca_venue":false,"about_ca":false},"ca_institutions":"","funders":"Consejo Nacional de Ciencia y Tecnología; Generalitat de Catalunya; McMaster University","keywords":"Extraction (chemistry); Thin-film transistor; Materials science; Transistor; Transconductance; Organic semiconductor; Biological system; Computer science; Optoelectronics; Nanotechnology; Electrical engineering; Chromatography; Chemistry","retraction":null,"screen_n_in":null,"score":{"opus":0.0142317143397914,"gpt":0.2838989474016144,"spread":0.2696672330618231,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0002222958,0.0002220591,0.000232147,0.0001121297,0.00008753666,0.00005398624,0.0001425856,0.0001557446,0.00001006031],"category_scores_gemma":[0.00006030418,0.00023588,0.00006016419,0.0001464096,0.00001787737,0.0003052442,0.00001646446,0.000380616,0.00001128972],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.0002603246,"about_ca_system_score_gemma":0.0000358175,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.00000247887,"about_ca_topic_score_gemma":0.0002100549,"domain_scores_codex":[0.9987856,0.000017667,0.0002629221,0.0002601159,0.00009896751,0.0005747663],"domain_scores_gemma":[0.9995161,0.000114277,0.00003495996,0.0002370561,0.00004683841,0.00005075438],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","study_design_scores_codex":[0.0000410465,0.0000212173,0.000003842616,0.00009352372,0.0001227618,0.00000172909,0.0004448788,0.7293195,0.2050528,0.0009576,0.0002644929,0.06367663],"study_design_scores_gemma":[0.0003217396,0.00006103804,0.000004262015,0.000008529772,0.00003919319,0.00001818026,0.00003479321,0.8659256,0.1144249,0.005650293,0.01325851,0.0002530171],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","genre_codex":"methods","genre_gemma":"empirical","genre_scores_codex":[0.2229639,0.002995164,0.772343,0.0002438039,0.0001198706,0.0002554516,0.00001109012,0.001004515,0.0000633057],"genre_scores_gemma":[0.9213585,0.001432715,0.0768695,0.00004402331,0.00005067104,0.00005585535,0.000009519356,0.00008646298,0.00009280272],"genre_candidate":"empirical","genre_consensus":null,"teacher_disagreement_score":0.6983946,"threshold_uncertainty_score":0.9618907,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W1997322169","doi":"10.1016/s0038-1101(01)00305-7","title":"Modeling thermal resistance in trench-isolated bipolar technologies including trench heat flow","year":2002,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"Silicon Carbide Semiconductor Technologies","field":"Engineering","cited_by":39,"is_retracted":false,"has_abstract":false,"routes":{"ca_aff":true,"ca_fund":true,"ca_venue":false,"about_ca":false},"ca_institutions":"Carleton University","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Trench; Common emitter; Thermal conduction; Materials science; Thermal resistance; Bipolar junction transistor; Thermal; Optoelectronics; Flow (mathematics); Mechanics; Transistor; Electrical engineering; Composite material; Engineering; Physics; Voltage; Thermodynamics","retraction":null,"screen_n_in":null,"score":{"opus":0.01959249434021978,"gpt":0.2308944768009676,"spread":0.2113019824607478,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.0002038315,0.0004917567,0.0005188635,0.0006677557,0.0001244228,0.00007561067,0.0006923057,0.0004279253,0.00003623699],"category_scores_gemma":[0.0001243744,0.0005217119,0.0001114217,0.001325086,0.00010769,0.0003881483,0.0001395596,0.001278941,0.00003972113],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.0008165441,"about_ca_system_score_gemma":0.00003570369,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.00002650768,"about_ca_topic_score_gemma":0.001026084,"domain_scores_codex":[0.997183,0.00003943513,0.0006096291,0.0005312578,0.0002608643,0.001375818],"domain_scores_gemma":[0.999052,0.00006818925,0.00004073475,0.0007346269,0.00005265867,0.00005171542],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","study_design_scores_codex":[0.00001831132,0.00004320431,0.0002671039,0.00007125112,0.00009143394,0.00005304122,0.001106024,0.5715055,0.4030233,0.0002616332,0.0003785125,0.02318061],"study_design_scores_gemma":[0.0004662637,0.00006116054,0.00001110613,0.00007632819,0.00001407534,0.000009873837,0.00025704,0.906992,0.08742762,0.002627515,0.001505404,0.00055165],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9128336,0.07982896,0.000819717,0.0002582906,0.0001936874,0.0002654665,0.00002058542,0.00495736,0.0008223323],"genre_scores_gemma":[0.9886061,0.01032973,0.0007026099,0.00001991757,0.00002498459,0.00006347743,0.00001121905,0.0001123053,0.0001296768],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.3354864,"threshold_uncertainty_score":0.9997234,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2055770280","doi":"10.1016/s0038-1101(02)00471-9","title":"Modeling negative capacitance effect in organic polymers","year":2003,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"Conducting polymers and applications","field":"Materials Science","cited_by":35,"is_retracted":false,"has_abstract":false,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"University of Victoria","funders":"","keywords":"Capacitance; Materials science; Dispersion (optics); Negative impedance converter; Thermal conduction; Physics; Condensed matter physics; Computational physics; Chemistry; Thermodynamics; Optics; Quantum mechanics; Electrode; Voltage","retraction":null,"screen_n_in":null,"score":{"opus":0.009965190934319218,"gpt":0.2598790065467212,"spread":0.249913815612402,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0004603359,0.000191782,0.0002342081,0.00007725691,0.0001687692,0.00005521753,0.0001988697,0.00005690517,0.0004391391],"category_scores_gemma":[0.0001240123,0.0001863891,0.00004943914,0.0004573049,0.00005908023,0.0001489401,0.00001572451,0.0002603007,0.0001196],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.0002221494,"about_ca_system_score_gemma":0.0002436349,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.0001240416,"about_ca_topic_score_gemma":0.0006086568,"domain_scores_codex":[0.9983173,0.000144185,0.0002745363,0.0003937701,0.0001644071,0.0007057865],"domain_scores_gemma":[0.9994082,0.000101686,0.00007132137,0.0002994738,0.0000367398,0.00008257701],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.00001479575,0.00003024857,0.00004616781,0.000009710413,0.000006385819,0.000002562029,0.0007969916,0.003493713,0.9927607,0.00205029,0.00002084404,0.0007676245],"study_design_scores_gemma":[0.0004629057,0.00009655055,0.000005120151,0.00001740228,0.00001141687,0.000007547113,0.0001881473,0.004910452,0.9865721,0.007093742,0.0003782064,0.0002564351],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9934138,0.00125945,0.003325474,0.000141461,0.0001640219,0.0002545976,0.000007360743,0.00008296077,0.001350849],"genre_scores_gemma":[0.9987072,0.0001067625,0.0003225431,0.0001205018,0.00002234035,0.00005390935,0.000002910938,0.00003300077,0.0006308166],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.006188592,"threshold_uncertainty_score":0.7600726,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2092644958","doi":"10.1016/j.sse.2007.07.013","title":"Electrical characteristics and simulations of self-switching-diodes in SOI technology","year":2007,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"Semiconductor materials and devices","field":"Engineering","cited_by":34,"is_retracted":false,"has_abstract":false,"routes":{"ca_aff":true,"ca_fund":true,"ca_venue":false,"about_ca":false},"ca_institutions":"Université de Sherbrooke","funders":"Natural Sciences and Engineering Research Council of Canada; CMC Microsystems","keywords":"Silicon on insulator; Diode; Materials science; Optoelectronics; Fabrication; Voltage; Thermal; Silicon; Electric field; Engineering physics; Electronic engineering; Electrical engineering; Engineering; Physics","retraction":null,"screen_n_in":null,"score":{"opus":0.005221040787323983,"gpt":0.2400744698088725,"spread":0.2348534290215485,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0001910854,0.000140733,0.0002619069,0.0002806711,0.00002959795,0.00001840133,0.00009476515,0.0001245803,0.000008333918],"category_scores_gemma":[0.00003300415,0.0001459759,0.00001963204,0.0003662751,0.00002172137,0.0000801297,0.00002228601,0.0002250689,0.000002583201],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.00009129193,"about_ca_system_score_gemma":0.00004075287,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.000005962318,"about_ca_topic_score_gemma":0.000124083,"domain_scores_codex":[0.9989444,0.0000109667,0.0003688847,0.0001421632,0.0000834876,0.0004501247],"domain_scores_gemma":[0.9996473,0.00007996814,0.00005588571,0.0001361691,0.00003795794,0.0000427408],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.00003439468,0.00008108011,0.01932387,0.0001398015,0.00007657407,0.00001418994,0.0007156374,0.002116683,0.9668939,0.003879519,0.00001880922,0.006705525],"study_design_scores_gemma":[0.001300986,0.0003655015,0.01798396,0.00007222568,0.0000634415,0.0000572852,0.0001091746,0.1961748,0.7607201,0.01588334,0.006441677,0.0008274844],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.997131,0.001440026,0.0008923655,0.00001774062,0.00009418369,0.0001087482,0.000009974833,0.0002120893,0.00009380549],"genre_scores_gemma":[0.9987571,0.0006614944,0.0004864562,0.00001556524,0.00003363586,0.000002578196,0.000008738143,0.00002900323,0.000005454593],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.2061738,"threshold_uncertainty_score":0.5952726,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2031219765","doi":"10.1016/j.sse.2011.05.010","title":"Modeling of current–voltage characteristics of thin film solar cells","year":2011,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"Chalcogenide Semiconductor Thin Films","field":"Engineering","cited_by":28,"is_retracted":false,"has_abstract":false,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"Concordia University","funders":"","keywords":"Theory of solar cells; Photocurrent; Solar cell; Current (fluid); Materials science; Absorption (acoustics); Optoelectronics; Drift current; Poisson's equation; Voltage; Thin film; Computational physics; Physics; Solar cell efficiency; Thermodynamics; Nanotechnology; Composite material","retraction":null,"screen_n_in":null,"score":{"opus":0.02492885902559945,"gpt":0.2361598101885412,"spread":0.2112309511629417,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.0002560512,0.0002940667,0.0004894092,0.0001642527,0.00003139565,0.000009709227,0.0003918744,0.0001216222,0.0001112735],"category_scores_gemma":[0.0000269708,0.0003267677,0.0001612283,0.0002358055,0.0000513009,0.0001715183,0.00007105932,0.0005374574,0.00002842872],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.0001054876,"about_ca_system_score_gemma":0.000109571,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.00002886055,"about_ca_topic_score_gemma":0.00002428169,"domain_scores_codex":[0.9981323,0.00002658683,0.0007243434,0.0002384677,0.0002488359,0.000629414],"domain_scores_gemma":[0.9990967,0.0000281122,0.0001477333,0.0004830654,0.0001433887,0.0001009921],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.00005718482,0.0001534114,0.0001473267,0.0007769509,0.0002456405,0.000008713037,0.006785029,0.09120662,0.8958236,0.0009180063,0.0002983589,0.00357916],"study_design_scores_gemma":[0.0002123026,0.00006210372,0.00001370312,0.00005475735,0.0000428383,0.000003198581,0.00005269035,0.4972245,0.5003235,0.001241,0.0005203111,0.000249144],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.974547,0.002551638,0.02051873,0.000001134491,0.0008482267,0.0002253688,0.0001972898,0.0002034891,0.0009071461],"genre_scores_gemma":[0.9964651,0.002757951,0.0005209945,0.000006818512,0.00005091857,0.00000662333,0.00004328864,0.000100582,0.00004774521],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.4060179,"threshold_uncertainty_score":0.9999185,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2964245630","doi":"10.1016/j.sse.2015.05.042","title":"Efficiency analysis of betavoltaic elements","year":2015,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"Advanced Energy Technologies and Civil Engineering Innovations","field":"Energy","cited_by":28,"is_retracted":false,"has_abstract":false,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"Ontario Tech University","funders":"","keywords":"Electron; Atomic physics; Flux (metallurgy); Range (aeronautics); Energy conversion efficiency; Diffusion; Plasma; Physics; Materials science; Nuclear physics; Optoelectronics","retraction":null,"screen_n_in":null,"score":{"opus":0.01408396774690199,"gpt":0.2698898730591942,"spread":0.2558059053122922,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0001808304,0.000157959,0.0003068368,0.0004417519,0.00004729441,0.000009988785,0.0002901313,0.00007346223,0.00003410737],"category_scores_gemma":[0.0001052792,0.0001546587,0.0001088268,0.002926402,0.00005039378,0.00007970738,0.00006557015,0.0001739044,0.00001006111],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.0001857441,"about_ca_system_score_gemma":0.0001039758,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.00007779242,"about_ca_topic_score_gemma":0.0006154567,"domain_scores_codex":[0.9986175,0.000013116,0.0004100971,0.0002215552,0.00024601,0.0004917522],"domain_scores_gemma":[0.9991426,0.00002319777,0.0001469195,0.0004316888,0.000195633,0.00005994592],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","study_design_scores_codex":[0.000009138693,0.00006427374,0.0004118106,0.000004862856,0.0005468291,0.00000165265,0.00007700845,0.860089,0.002486011,0.1261273,0.0001559016,0.01002626],"study_design_scores_gemma":[0.001632976,0.0009034425,0.001196828,0.00001965318,0.001120504,0.00000370689,0.0005236174,0.5402064,0.06829448,0.06831759,0.3167309,0.001049905],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.7304255,0.001600125,0.2505818,0.00018303,0.0002622158,0.0001538679,0.00003699763,0.000845078,0.0159114],"genre_scores_gemma":[0.997036,0.0001686521,0.001984086,0.00003833594,0.00001314329,0.00001820772,0.00008528661,0.00002584028,0.0006304454],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.3198825,"threshold_uncertainty_score":0.63068,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2097058694","doi":"10.1016/j.sse.2010.03.017","title":"Large-signal model for AlGaN/GaN HEMTs suitable for RF switching-mode power amplifiers design","year":2010,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":27,"is_retracted":false,"has_abstract":false,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"École de Technologie Supérieure; University of Calgary","funders":"","keywords":"High-electron-mobility transistor; Amplifier; Large-signal model; RF power amplifier; Transistor; Power (physics); Electronic engineering; Mode (computer interface); SIGNAL (programming language); Computer science; Gallium nitride; Materials science; Electrical engineering; Engineering; Bandwidth (computing); Physics; Voltage; Telecommunications; Layer (electronics)","retraction":null,"screen_n_in":null,"score":{"opus":0.01613574533030851,"gpt":0.2896510784715701,"spread":0.2735153331412616,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.0006891252,0.0004117408,0.0004794725,0.00006158012,0.0004077332,0.0002087115,0.0003952839,0.0001400766,0.0001941828],"category_scores_gemma":[0.00001612816,0.0003995758,0.0002750533,0.00009841795,0.00002879688,0.0002712702,0.00003928053,0.00038696,0.00001782316],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.00006429362,"about_ca_system_score_gemma":0.0005360098,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.00005212574,"about_ca_topic_score_gemma":0.0001299915,"domain_scores_codex":[0.9972186,0.00003204921,0.0004605502,0.0005718354,0.0001808495,0.001536102],"domain_scores_gemma":[0.9987019,0.0001802324,0.0002457614,0.0004318106,0.0002173712,0.0002228889],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.0002999226,0.0002370818,0.0001004147,0.00006729852,0.0002320063,5.191945e-7,0.001359684,0.01509088,0.9320837,0.04514956,0.004516772,0.0008621578],"study_design_scores_gemma":[0.002803531,0.0003492684,0.00000353776,0.00002061213,0.0001376539,0.000001690364,0.00025955,0.2640779,0.5127457,0.1888266,0.02992835,0.000845556],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"methods","genre_gemma":"empirical","genre_scores_codex":[0.3599922,0.00005839121,0.6377173,0.00007522509,0.0003310009,0.001037139,0.0005800738,0.00006903768,0.000139647],"genre_scores_gemma":[0.9919408,0.000007123525,0.005677123,0.0002602097,0.0002903188,0.0003800914,0.0003467895,0.000132789,0.0009647487],"genre_candidate":"empirical","genre_consensus":null,"teacher_disagreement_score":0.6320402,"threshold_uncertainty_score":0.9998456,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W1996637315","doi":"10.1016/j.sse.2009.03.003","title":"Current conduction models in the high temperature single-electron transistor","year":2009,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"Quantum and electron transport phenomena","field":"Physics and Astronomy","cited_by":18,"is_retracted":false,"has_abstract":false,"routes":{"ca_aff":true,"ca_fund":true,"ca_venue":false,"about_ca":false},"ca_institutions":"Université de Sherbrooke","funders":"Natural Sciences and Engineering Research Council of Canada; Fonds Québécois de la Recherche sur la Nature et les Technologies","keywords":"Thermionic emission; Thermal conduction; Transistor; Coulomb blockade; Electron; Materials science; Current (fluid); Condensed matter physics; Monte Carlo method; Conduction electron; Optoelectronics; Physics; Electrical engineering; Thermodynamics; Engineering; Voltage; Quantum mechanics","retraction":null,"screen_n_in":null,"score":{"opus":0.01195682608522115,"gpt":0.2464002375942864,"spread":0.2344434115090653,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.0003102806,0.0003681395,0.000347264,0.0001208099,0.0002081158,0.00009290582,0.0003609663,0.00007308635,0.00005713276],"category_scores_gemma":[0.000001166285,0.0002929162,0.000167261,0.0005247056,0.00004563827,0.0003605774,0.000004446176,0.001098288,0.00001432763],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.0002018169,"about_ca_system_score_gemma":0.0002453497,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.00004486366,"about_ca_topic_score_gemma":0.00009272605,"domain_scores_codex":[0.9975561,0.0001263323,0.0004272182,0.0004587853,0.0003209586,0.001110548],"domain_scores_gemma":[0.9993455,0.00003023222,0.0001099969,0.0003651496,0.00006393372,0.00008518481],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"theoretical_or_conceptual","study_design_gemma":"theoretical_or_conceptual","study_design_scores_codex":[0.0007231882,0.004136067,0.000448975,0.0000713655,0.0002488151,0.00001621351,0.01015164,0.02721834,0.1660542,0.6980789,0.004569892,0.08828238],"study_design_scores_gemma":[0.003404262,0.002413805,0.001384259,0.00007635794,0.0001814681,0.00001319183,0.0005155405,0.002337629,0.08144315,0.8703818,0.0363554,0.001493158],"study_design_candidate":"theoretical_or_conceptual","study_design_consensus":"theoretical_or_conceptual","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.990971,0.003491004,0.001876169,0.001459094,0.0001919506,0.000508206,0.00003215253,0.00007785822,0.001392526],"genre_scores_gemma":[0.9987603,0.0002681975,0.00002518261,0.0002435792,0.0002615108,0.0000420336,0.000242157,0.0000323452,0.000124687],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.1723029,"threshold_uncertainty_score":0.9999523,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W1982238004","doi":"10.1016/s0038-1101(00)00083-6","title":"A scalable thermal model for trench isolated bipolar devices","year":2000,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":17,"is_retracted":false,"has_abstract":false,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"Nortel (Canada); Carleton University","funders":"","keywords":"Trench; Bipolar junction transistor; Scalability; Thermal; Thermal resistance; Materials science; Transistor; Variety (cybernetics); Optoelectronics; Electronic engineering; Computer science; Electrical engineering; Engineering; Physics; Nanotechnology; Thermodynamics; Voltage","retraction":null,"screen_n_in":null,"score":{"opus":0.01289828342069317,"gpt":0.246230769305967,"spread":0.2333324858852738,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.0001261577,0.000284692,0.0002662594,0.00006065239,0.000138011,0.00005916817,0.0002759873,0.0001050353,0.0003255642],"category_scores_gemma":[0.000002968958,0.0002866444,0.0000962291,0.0002209973,0.00002634177,0.0003304126,0.00000848091,0.0002404861,0.00007106208],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.0001619025,"about_ca_system_score_gemma":0.00007308771,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.00000460028,"about_ca_topic_score_gemma":0.00004994324,"domain_scores_codex":[0.998311,0.00001545793,0.000323523,0.0002927348,0.0001499722,0.0009073261],"domain_scores_gemma":[0.9994866,0.00003330846,0.000039219,0.0002922516,0.00004774773,0.00010082],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","study_design_scores_codex":[0.0000436386,0.00004549587,0.0000351454,0.00008325115,0.0001623952,0.000002001306,0.0005637807,0.8539014,0.03884688,0.0002897996,0.0008880973,0.1051381],"study_design_scores_gemma":[0.0004941829,0.0001018211,0.000005389291,0.00001585158,0.00003744079,0.000003990511,0.00001388896,0.8902702,0.007674109,0.002198317,0.09883377,0.0003510591],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.7813159,0.02963238,0.1814581,0.00004340294,0.0002944029,0.001026174,0.0001845118,0.001093766,0.004951308],"genre_scores_gemma":[0.9903112,0.00283963,0.00110832,0.0001950486,0.00008673926,0.0001053546,0.00006790564,0.000127344,0.005158443],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.2089953,"threshold_uncertainty_score":0.9999586,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2002010382","doi":"10.1016/s0038-1101(01)00289-1","title":"Carrier transport and luminescence in composite organic–inorganic light-emitting devices","year":2002,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"Organic Light-Emitting Diodes Research","field":"Engineering","cited_by":14,"is_retracted":false,"has_abstract":false,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"University of Toronto","funders":"","keywords":"Composite number; Nanocrystal; Luminescence; Optoelectronics; Materials science; Quantum dot; Polymer; Light emission; Light-emitting diode; Nanotechnology; Composite material","retraction":null,"screen_n_in":null,"score":{"opus":0.006910407943409027,"gpt":0.217302573843917,"spread":0.210392165900508,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.0003505939,0.0004004325,0.0004543573,0.000233937,0.0001388278,0.00008690335,0.0004230318,0.000175618,0.0002125627],"category_scores_gemma":[0.00004262395,0.0004287249,0.00005997405,0.0009342062,0.00006338301,0.0003335148,0.00006709393,0.0008974675,0.00009128183],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.0004048944,"about_ca_system_score_gemma":0.0000666301,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.00002275128,"about_ca_topic_score_gemma":0.0005754991,"domain_scores_codex":[0.997141,0.0000599828,0.0005764517,0.0005111411,0.0003957479,0.001315701],"domain_scores_gemma":[0.999116,0.0001000648,0.00006037959,0.0004157325,0.000073296,0.0002345071],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.00002579036,0.0001452527,0.09605243,0.0007204033,0.0002248164,0.0002389883,0.009157462,0.0004150621,0.8901273,0.0001430751,0.0007034512,0.002045947],"study_design_scores_gemma":[0.002284268,0.000252121,0.01034114,0.0002965753,0.00008867096,0.000221305,0.0003483943,0.08326945,0.8826826,0.000122209,0.01828521,0.001808096],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9890292,0.008206379,0.0001909966,0.0003003299,0.000144632,0.0003120926,0.00001239401,0.0004436481,0.001360373],"genre_scores_gemma":[0.9966162,0.002379272,0.0001943579,0.00007456572,0.00009700823,0.00001477587,0.00001068799,0.0001537751,0.0004593255],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.08571129,"threshold_uncertainty_score":0.9998165,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2036914515","doi":"10.1016/s0038-1101(02)00379-9","title":"Properties of 1.3 μm InGaNAs laser material grown by MBE using a N2/Ar RF plasma","year":2003,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"Semiconductor Quantum Structures and Devices","field":"Physics and Astronomy","cited_by":12,"is_retracted":false,"has_abstract":false,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"Institute for Microstructural Sciences","funders":"","keywords":"Plasma; Materials science; Laser; Optoelectronics; Analytical Chemistry (journal); Chemistry; Optics; Physics; Environmental chemistry; Nuclear physics","retraction":null,"screen_n_in":null,"score":{"opus":0.01326834585436488,"gpt":0.2402535544564602,"spread":0.2269852086020954,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0001259646,0.0002879003,0.0003703598,0.00005910587,0.000150701,0.00008370653,0.0001906526,0.00006570941,0.0002874959],"category_scores_gemma":[0.000007960311,0.0002446277,0.0001151528,0.0001686704,0.0000871563,0.0002034592,0.0000403331,0.0002206472,0.000008673976],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.00006113596,"about_ca_system_score_gemma":0.0002535348,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.0002981715,"about_ca_topic_score_gemma":0.00001996505,"domain_scores_codex":[0.9983464,0.00007201555,0.000400269,0.0003173451,0.0002063462,0.0006575532],"domain_scores_gemma":[0.9993147,0.00001764705,0.0002310681,0.0002650635,0.00008229219,0.00008928297],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.0001183335,0.00009693436,0.001338169,0.00007235342,0.0002324426,0.000001825799,0.0007215467,0.0005813726,0.98615,0.009380982,0.0008545213,0.0004515361],"study_design_scores_gemma":[0.0006119591,0.0001064397,0.0000101998,0.00003421073,0.00005122317,0.000005339296,0.0003341495,0.0009967074,0.9777908,0.005782597,0.01394916,0.0003272463],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9980549,0.0005595388,0.0001022917,0.00001803941,0.0003158269,0.0001927392,0.0001116531,0.0000338887,0.0006111775],"genre_scores_gemma":[0.9993399,0.00002885362,0.000144896,0.00004546197,0.0001259743,0.000009574387,0.00004426716,0.00005251903,0.0002085242],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.01309464,"threshold_uncertainty_score":0.9975629,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2620552952","doi":"10.1016/j.sse.2017.05.008","title":"Submillimeter wave GaAs Schottky diode application based study and optimization for 0.1–1.5 THz","year":2017,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"Superconducting and THz Device Technology","field":"Physics and Astronomy","cited_by":12,"is_retracted":false,"has_abstract":false,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"École de Technologie Supérieure; Université de Sherbrooke","funders":"","keywords":"Schottky diode; Parasitic capacitance; Terahertz radiation; Capacitance; Materials science; Optoelectronics; Diode; Microfabrication; Varicap; Diffusion capacitance; Parasitic extraction; Anode; Physics; Fabrication; Electrode","retraction":null,"screen_n_in":null,"score":{"opus":0.0182920698491119,"gpt":0.2902405039943199,"spread":0.271948434145208,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0002480759,0.0001781326,0.0002143777,0.00006487728,0.0005809474,0.000147087,0.0002077688,0.00005723189,0.00002540852],"category_scores_gemma":[0.00002280581,0.0001735365,0.00005877193,0.00005437575,0.0000556732,0.0001964652,0.00005196322,0.0001981479,0.000005973196],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.00003765167,"about_ca_system_score_gemma":0.00007412552,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.0001206126,"about_ca_topic_score_gemma":0.00008721889,"domain_scores_codex":[0.998905,0.00002925389,0.0001967393,0.0003779531,0.00008865356,0.0004023975],"domain_scores_gemma":[0.9990268,0.00005391286,0.0001594524,0.0006027629,0.0001042317,0.00005287996],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"observational","study_design_gemma":"simulation_or_modeling","study_design_scores_codex":[0.0002793645,0.002672623,0.4598351,0.0001774724,0.001607292,0.000006562446,0.003845989,0.02165504,0.01925947,0.03338291,0.0004331091,0.4568451],"study_design_scores_gemma":[0.009026376,0.001852772,0.003823297,0.00004081799,0.000509554,0.00000465347,0.005220346,0.8545679,0.07667482,0.03817486,0.008546241,0.001558368],"study_design_candidate":"simulation_or_modeling","study_design_consensus":null,"genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.8251107,0.00008518028,0.1733844,0.0003202011,0.0000697425,0.0007576189,0.00002286047,0.00008227186,0.0001670017],"genre_scores_gemma":[0.9963355,0.000009790838,0.003052181,0.00003958551,0.00009783528,0.0002638968,0.00007528561,0.00003617684,0.00008975239],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.8329129,"threshold_uncertainty_score":0.7076613,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2033705632","doi":"10.1016/j.sse.2004.05.047","title":"Self-heating in multi-emitter SiGe HBTs","year":2004,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":11,"is_retracted":false,"has_abstract":false,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"Institute for Microstructural Sciences","funders":"","keywords":"Common emitter; Materials science; Optoelectronics; Heterojunction bipolar transistor; Bipolar junction transistor; Biasing; Transistor; Heterostructure-emitter bipolar transistor; Thermal; Coupling (piping); Voltage; Electrical engineering; Physics; Composite material","retraction":null,"screen_n_in":null,"score":{"opus":0.01411969736616136,"gpt":0.2599645760410089,"spread":0.2458448786748476,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.0001427697,0.0002459287,0.0002285693,0.00009468489,0.00005734633,0.00003537982,0.0002029533,0.00008843195,0.00002685394],"category_scores_gemma":[0.000009009439,0.0002685474,0.00005173821,0.0002737476,0.00001632905,0.0002498661,0.00002012751,0.0004453084,0.00007528401],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.0006751696,"about_ca_system_score_gemma":0.00007092072,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.00001421012,"about_ca_topic_score_gemma":0.0001664578,"domain_scores_codex":[0.9983871,0.00001822414,0.0003456301,0.0002650356,0.0001585587,0.0008254385],"domain_scores_gemma":[0.9995831,0.00002528227,0.00004157173,0.0002474583,0.00002507578,0.00007749832],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"simulation_or_modeling","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.0000142058,0.0003023295,0.00202236,0.0003724899,0.0002200092,0.0001361171,0.008358525,0.8792396,0.09289242,0.002746097,0.0001418496,0.01355396],"study_design_scores_gemma":[0.01489631,0.0007292237,0.001478851,0.0005820132,0.0001421204,0.0001641009,0.001122951,0.330291,0.457295,0.04274943,0.145571,0.004977907],"study_design_candidate":"simulation_or_modeling","study_design_consensus":null,"genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.939203,0.00530389,0.05179089,0.00002997688,0.0004586084,0.0004647349,0.000009378582,0.0007346048,0.00200487],"genre_scores_gemma":[0.9940673,0.001129781,0.004309908,0.0001793207,0.00005743995,0.00003589691,0.00001302377,0.0000838134,0.0001235073],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.5489486,"threshold_uncertainty_score":0.9999767,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W4285605754","doi":"10.1016/j.sse.2022.108420","title":"Modeling of forward gate leakage current for normally off pGaN/AlGaN/GaN HEMTs","year":2022,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":9,"is_retracted":false,"has_abstract":false,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"McMaster University","funders":"","keywords":"Materials science; Optoelectronics; Leakage (economics); High-electron-mobility transistor; Electrical engineering; Electronic engineering; Transistor; Engineering; Voltage","retraction":null,"screen_n_in":null,"score":{"opus":0.01453445824587669,"gpt":0.2737827176893747,"spread":0.259248259443498,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.0004020492,0.0002873343,0.000459449,0.00009727608,0.0003058439,0.00004958322,0.0003854374,0.00002751746,0.0002921491],"category_scores_gemma":[0.000004819125,0.0003029566,0.0002729466,0.0001711906,0.00002575065,0.0001457427,0.0001259414,0.0003063675,0.000007912088],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.0001147721,"about_ca_system_score_gemma":0.0004144455,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.00008252588,"about_ca_topic_score_gemma":0.00003566593,"domain_scores_codex":[0.9978478,0.0000688652,0.0005866083,0.0003892171,0.0002770398,0.0008304825],"domain_scores_gemma":[0.9990811,0.00004207113,0.0002749107,0.0003472766,0.0001444531,0.0001101513],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","study_design_scores_codex":[0.0006715821,0.0009162867,0.000481987,0.0005569442,0.0006395026,0.000003370643,0.002808166,0.616203,0.3216438,0.02731542,0.001902062,0.02685789],"study_design_scores_gemma":[0.004791347,0.001091402,0.00001767265,0.00007688789,0.0003597193,0.000005427678,0.00131213,0.4527044,0.3103161,0.05068911,0.1771043,0.001531538],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9837007,0.001290279,0.01243694,0.00009712384,0.0005954737,0.0006831791,0.000781561,0.00005354689,0.0003612265],"genre_scores_gemma":[0.9984768,0.0000874289,0.0001641684,0.00006237742,0.0001840062,0.000194108,0.000482771,0.00007242277,0.0002759421],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.1752022,"threshold_uncertainty_score":0.9999422,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2006257990","doi":"10.1016/j.sse.2007.07.011","title":"Simulation of a dual gate organic transistor compatible with printing methods","year":2007,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"Organic Electronics and Photovoltaics","field":"Engineering","cited_by":7,"is_retracted":false,"has_abstract":false,"routes":{"ca_aff":true,"ca_fund":true,"ca_venue":false,"about_ca":false},"ca_institutions":"University of British Columbia","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Organic field-effect transistor; Materials science; Transistor; Optoelectronics; Organic semiconductor; Semiconductor; Field-effect transistor; Schottky barrier; Voltage; Electrical engineering","retraction":null,"screen_n_in":null,"score":{"opus":0.008781989402564713,"gpt":0.2750154381408469,"spread":0.2662334487382822,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.0008385829,0.0002612576,0.0003605596,0.0001393732,0.00008169847,0.00002221012,0.0001433302,0.0001002983,0.00005303527],"category_scores_gemma":[0.00002820023,0.0002568734,0.00007042392,0.0006298258,0.0000388951,0.0001102888,0.0000164065,0.0004628414,0.000006112385],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.0002960335,"about_ca_system_score_gemma":0.000178215,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.00001045111,"about_ca_topic_score_gemma":0.0005032792,"domain_scores_codex":[0.998185,0.0000440139,0.0004871483,0.0002306444,0.0002347334,0.0008184259],"domain_scores_gemma":[0.9991282,0.0002398523,0.0001135493,0.0002812394,0.0001330013,0.0001041732],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.00006368726,0.000040724,0.0001000349,0.0001173306,0.0001521367,0.000005176657,0.0009570325,0.4665108,0.5279692,0.0004458545,0.00001038958,0.003627638],"study_design_scores_gemma":[0.0005133024,0.000293291,0.00009466692,0.00002318283,0.0000519107,0.000009319618,0.0000369756,0.2570684,0.7368394,0.0007445603,0.004037804,0.0002871633],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.6247526,0.0009562304,0.3733247,0.00001030071,0.00007936742,0.0002130423,0.000004987224,0.0002045901,0.0004541912],"genre_scores_gemma":[0.9932841,0.0001671799,0.00627527,0.00002074076,0.0000448102,0.000003440996,0.00001524582,0.0001108709,0.00007834425],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.3685315,"threshold_uncertainty_score":0.9999884,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2013008031","doi":"10.1016/j.sse.2008.06.008","title":"Gate dielectric engineering of quarter sub micron AlGaN/GaN MISHFET: A new device architecture for improved transconductance and high cut-off frequency","year":2008,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":7,"is_retracted":false,"has_abstract":false,"routes":{"ca_aff":false,"ca_fund":false,"ca_venue":false,"about_ca":true},"ca_institutions":"","funders":"","keywords":"Transconductance; Materials science; Dielectric; Optoelectronics; Quarter (Canadian coin); Electrical engineering; Electronic engineering; Transistor; Engineering; Voltage","retraction":null,"screen_n_in":null,"score":{"opus":0.007348290989770578,"gpt":0.217789727785481,"spread":0.2104414367957104,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.000111654,0.0003916545,0.0005487966,0.0001059626,0.0001167687,0.00003923522,0.0002166701,0.00008673249,0.00003896089],"category_scores_gemma":[0.000006670136,0.0003807897,0.0001598104,0.0002213689,0.00004367321,0.0001499514,0.00001206523,0.0002719157,0.000002390855],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.00004834697,"about_ca_system_score_gemma":0.0004175337,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.0004200642,"about_ca_topic_score_gemma":0.0001838109,"domain_scores_codex":[0.9980901,0.00003198067,0.0004843342,0.0004576134,0.0001041513,0.0008318014],"domain_scores_gemma":[0.9991429,0.00008175476,0.0002256125,0.0002837715,0.00009833828,0.0001675583],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.00007786613,0.000049823,0.0001058341,0.0001198407,0.0001614974,0.000001399712,0.0006651075,0.0002501695,0.9929913,0.001218023,0.0001392161,0.004219938],"study_design_scores_gemma":[0.001919755,0.0005156553,0.000190425,0.00005460571,0.0001118416,0.00001382702,0.00003170643,0.001144347,0.9822711,0.007559461,0.005627507,0.0005597309],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9867943,0.002764212,0.008991908,0.0002867363,0.0001707742,0.0006684925,0.0002255758,0.00005333146,0.00004470407],"genre_scores_gemma":[0.9973452,0.0002993008,0.001673229,0.00008387557,0.0002246332,0.00004718337,0.0001433788,0.00007767452,0.0001055273],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.01072015,"threshold_uncertainty_score":0.9998644,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W1964907854","doi":"10.1016/j.sse.2014.08.009","title":"GaN–InGaN LED efficiency reduction from parasitic electron currents in p-GaN","year":2014,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":7,"is_retracted":false,"has_abstract":false,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"Lakehead University","funders":"","keywords":"Voltage droop; Optoelectronics; Electron; Materials science; Light-emitting diode; Heterojunction; Quantum tunnelling; Electrode; Wide-bandgap semiconductor; Saturation current; Current (fluid); Gallium nitride; Voltage; Physics; Layer (electronics); Nanotechnology; Voltage source","retraction":null,"screen_n_in":null,"score":{"opus":0.007337940722567558,"gpt":0.266605402470353,"spread":0.2592674617477855,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.0003478376,0.0003377727,0.0004291639,0.0001284607,0.0001425687,0.000116949,0.0002842628,0.00007354713,0.0002187547],"category_scores_gemma":[0.00001167587,0.0003447593,0.0001142734,0.0002781173,0.00004394163,0.0002017826,0.00001735344,0.0004021568,0.0001164817],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.0001668999,"about_ca_system_score_gemma":0.0001994027,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.0006145982,"about_ca_topic_score_gemma":0.0001073773,"domain_scores_codex":[0.9975165,0.0001899389,0.0004985512,0.0005543749,0.0002248385,0.001015763],"domain_scores_gemma":[0.9991419,0.0000549365,0.000227186,0.0003873061,0.00006250101,0.0001262269],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.0001095,0.0005538842,0.007462225,0.00003893671,0.0001058972,0.000002096236,0.001288403,0.00408115,0.9738884,0.00447283,0.0003460874,0.007650576],"study_design_scores_gemma":[0.001955202,0.0004161262,0.001527127,0.00008644102,0.00007962122,0.000002301199,0.000183195,0.005220489,0.9489282,0.03256854,0.008271349,0.0007614046],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9964157,0.0002520378,0.001246226,0.00008261357,0.0005961634,0.0003099241,0.00003851999,0.00007488384,0.0009839732],"genre_scores_gemma":[0.9988568,0.00004087451,0.00003597653,0.00004456477,0.0004374202,0.0000394293,0.0003252478,0.00005376245,0.0001659434],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.02809571,"threshold_uncertainty_score":0.9999005,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2969451192","doi":"10.1016/j.sse.2019.107634","title":"Optimization of deep well gate-controlled dual direction SCR device for ESD protection in 0.5 μm CMOS process","year":2019,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"Electrostatic Discharge in Electronics","field":"Engineering","cited_by":6,"is_retracted":false,"has_abstract":false,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"Western University","funders":"Hunan Normal University; National Natural Science Foundation of China","keywords":"Electrostatic discharge; CMOS; Voltage; Electrical engineering; Anode; Chip; Materials science; Optoelectronics; Electrode; Engineering; Chemistry","retraction":null,"screen_n_in":null,"score":{"opus":0.005007177058613267,"gpt":0.2350283304862418,"spread":0.2300211534276285,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.000642082,0.0004095677,0.0007037618,0.0003504797,0.0000750196,0.00005339486,0.0002079448,0.0002129101,0.00005803933],"category_scores_gemma":[0.0001127304,0.0004418211,0.0001516486,0.0008639962,0.00002802237,0.0004520119,0.00001669956,0.0005462998,0.00002687513],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.0007242808,"about_ca_system_score_gemma":0.0002746875,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.0000203575,"about_ca_topic_score_gemma":0.0005740614,"domain_scores_codex":[0.9971019,0.00008585975,0.0008529365,0.0004563337,0.0003518899,0.001151055],"domain_scores_gemma":[0.9989085,0.0001277609,0.0002650341,0.0003195351,0.0003008169,0.00007840445],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","study_design_scores_codex":[0.000691777,0.0001191569,0.00009484911,0.0004983086,0.0001420703,8.19093e-7,0.0005190916,0.9712235,0.0239425,0.0003265796,0.00002545044,0.002415837],"study_design_scores_gemma":[0.004792786,0.0006621511,0.00001779657,0.00006384964,0.0000607348,0.000009138083,0.00007555502,0.8830575,0.1079824,0.002216281,0.0006452685,0.0004164415],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.8122681,0.002215418,0.1764207,0.0001152821,0.0005143834,0.006089771,0.00001990973,0.0005281285,0.001828327],"genre_scores_gemma":[0.9966008,0.0005767891,0.001206394,0.00003214219,0.00006268148,0.0008981546,0.0001033286,0.0001674806,0.0003521936],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.1843327,"threshold_uncertainty_score":0.9998034,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2015941658","doi":"10.1016/j.sse.2006.06.014","title":"Application of PVD silver for integrated microwave passives in silicon technology","year":2006,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"Copper Interconnects and Reliability","field":"Materials Science","cited_by":6,"is_retracted":false,"has_abstract":false,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"Carleton University","funders":"","keywords":"Materials science; Electromigration; Silicon; Microwave; Monolithic microwave integrated circuit; Optoelectronics; Deposition (geology); Broadband; Copper; Electronic engineering; Metallurgy; Composite material; Computer science; Telecommunications; Engineering","retraction":null,"screen_n_in":null,"score":{"opus":0.004420832403206465,"gpt":0.2486937233043471,"spread":0.2442728909011407,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0002884331,0.0001484694,0.000275391,0.000151989,0.00004438442,0.00001847768,0.0002386198,0.0001368697,0.00002093892],"category_scores_gemma":[0.00006651742,0.0001252747,0.00006488316,0.0003228859,0.0001601265,0.00007406201,0.00004386661,0.0001513765,0.00001341693],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.0001970962,"about_ca_system_score_gemma":0.0001578526,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.0002812513,"about_ca_topic_score_gemma":0.002401285,"domain_scores_codex":[0.9986348,0.00003586543,0.0004329699,0.0003581575,0.00008826074,0.0004499488],"domain_scores_gemma":[0.9992533,0.00008612372,0.0001618944,0.0003005859,0.0001759417,0.00002209946],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.00007784404,0.0001314218,0.0006492768,0.00003923158,0.000004421657,5.247733e-7,0.00007773864,0.0004454915,0.9872631,0.006038647,0.0001872673,0.005085052],"study_design_scores_gemma":[0.0004643104,0.0002120341,0.0003270007,0.00001681478,0.000008460323,0.000002907742,0.00008539249,0.003823755,0.9412571,0.04680676,0.006853955,0.0001414832],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9882325,0.0005705961,0.009730191,0.0005123768,0.00009328833,0.0005735396,0.00004476465,0.00007050823,0.0001722657],"genre_scores_gemma":[0.9988853,0.00004114947,0.0006965267,0.00003179683,0.00002291598,0.0001209986,0.00003395617,0.00001772992,0.0001496562],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.04600596,"threshold_uncertainty_score":0.5108554,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2061010231","doi":"10.1016/s0038-1101(01)00336-7","title":"A model for exciton formation in organic electroluminescent devices","year":2002,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"Organic Light-Emitting Diodes Research","field":"Engineering","cited_by":6,"is_retracted":false,"has_abstract":false,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"University of Victoria","funders":"","keywords":"Exciton; Electroluminescence; Charge (physics); Charge carrier; Chemical physics; Materials science; Optoelectronics; Charge-carrier density; Chemistry; Condensed matter physics; Physics; Nanotechnology; Quantum mechanics","retraction":null,"screen_n_in":null,"score":{"opus":0.019264728159544,"gpt":0.251156904200712,"spread":0.231892176041168,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.0002463824,0.0002433449,0.000259889,0.0002231938,0.00007913185,0.00007596398,0.0002963172,0.000117014,0.00007697169],"category_scores_gemma":[0.00005571485,0.000263444,0.00007039784,0.0005123285,0.00001670515,0.0003725978,0.00003242561,0.0004080372,0.00008415827],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.0009065399,"about_ca_system_score_gemma":0.00005254801,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.00000297921,"about_ca_topic_score_gemma":0.0006068854,"domain_scores_codex":[0.9978638,0.00002686327,0.0004204004,0.0002576181,0.0002700302,0.001161317],"domain_scores_gemma":[0.9994221,0.0000674095,0.00004840656,0.0002832517,0.00008097785,0.00009781815],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"simulation_or_modeling","study_design_scores_codex":[0.000153901,0.000527068,0.0004389608,0.002011773,0.0002954892,0.00002843923,0.01209208,0.07274043,0.8831937,0.001593618,0.01419492,0.0127296],"study_design_scores_gemma":[0.0006272342,0.00008806931,0.000009324492,0.00002082237,0.000008994143,0.00001045953,0.00002059324,0.842226,0.1536556,0.000291644,0.002798778,0.0002425157],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9146783,0.004927994,0.07677703,0.0004087286,0.0001534981,0.001216424,0.00001969389,0.0007020698,0.001116309],"genre_scores_gemma":[0.9968026,0.001477009,0.0005591861,0.00006238809,0.00007487874,0.0001035297,0.00002584242,0.0001092891,0.0007853358],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.7694855,"threshold_uncertainty_score":0.9999818,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2899193540","doi":"10.1016/j.sse.2019.03.002","title":"Electronic structure, magnetoexcitons and valley polarized electron gas in 2D crystals","year":2019,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"2D Materials and Applications","field":"Materials Science","cited_by":6,"is_retracted":false,"has_abstract":false,"routes":{"ca_aff":true,"ca_fund":true,"ca_venue":false,"about_ca":false},"ca_institutions":"University of Ottawa","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Zeeman effect; Landau quantization; Condensed matter physics; Exciton; Physics; Dirac fermion; Monolayer; Electron; Fermi gas; Magnetic field; Point reflection; Electronic structure; Band gap; Graphene; Materials science; Quantum mechanics; Nanotechnology","retraction":null,"screen_n_in":null,"score":{"opus":0.004269916361686346,"gpt":0.2398264920098002,"spread":0.2355565756481139,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.0005275228,0.0003920546,0.0005471957,0.0001709436,0.0001556901,0.0002314257,0.0004276978,0.0001673596,0.0008428317],"category_scores_gemma":[0.00002829319,0.0003781058,0.00006901843,0.0003752751,0.00008892974,0.0003141533,0.0001396445,0.0004481787,0.0002060692],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.0003483447,"about_ca_system_score_gemma":0.000526762,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.000173684,"about_ca_topic_score_gemma":0.0009717132,"domain_scores_codex":[0.9964694,0.0001602816,0.0005639055,0.0007771462,0.0003135465,0.001715681],"domain_scores_gemma":[0.9989066,0.00008487281,0.0002056237,0.0005797853,0.00007258409,0.0001505095],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.00009676907,0.00005439273,0.0002276302,0.00003878312,0.00001271661,0.000002242008,0.000153636,0.000118706,0.9831747,0.01578455,0.000115441,0.0002203996],"study_design_scores_gemma":[0.00206487,0.00072734,0.001437742,0.0000317475,0.00003954987,0.0000648002,0.0000505035,0.0007727715,0.8728721,0.09648526,0.02465865,0.0007946829],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9956666,0.001878111,0.0002065032,0.0004951338,0.0001650479,0.0008686346,0.00008052438,0.0001511141,0.0004883293],"genre_scores_gemma":[0.9968869,0.001302388,0.0003470237,0.0002870673,0.00007626526,0.00006516391,0.0000638001,0.00007352602,0.0008978477],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.1103026,"threshold_uncertainty_score":0.9998671,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2057948294","doi":"10.1016/s0038-1101(02)00008-4","title":"Dynamic finite element approach for analyzing stress and distortion in multilevel devices","year":2002,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"Integrated Circuits and Semiconductor Failure Analysis","field":"Engineering","cited_by":6,"is_retracted":false,"has_abstract":false,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"Université du Québec à Trois-Rivières; Université du Québec en Outaouais","funders":"","keywords":"Finite element method; Residual stress; Distortion (music); Thermal; Stress (linguistics); Transient (computer programming); Deformation (meteorology); Materials science; Structural engineering; Electronic engineering; Computer science; Engineering; Composite material; Physics","retraction":null,"screen_n_in":null,"score":{"opus":0.01091947081170003,"gpt":0.227414275793879,"spread":0.2164948049821789,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0001240143,0.0001984652,0.0002463796,0.0001986122,0.00006847062,0.0000545261,0.0001036955,0.00007510936,0.00001969544],"category_scores_gemma":[0.00001351526,0.0001941754,0.00006808367,0.000229113,0.00001734212,0.000148978,0.000009060604,0.0002341231,0.000002318919],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.000280641,"about_ca_system_score_gemma":0.00001193063,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.00002530965,"about_ca_topic_score_gemma":0.001294805,"domain_scores_codex":[0.9988185,0.00001882704,0.0003119958,0.0002514466,0.00009872831,0.0005005212],"domain_scores_gemma":[0.999664,0.00004020736,0.00004937554,0.000147068,0.00004510181,0.00005423568],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","study_design_scores_codex":[0.00001710501,0.0001758943,0.003599821,0.000491894,0.0005474245,0.000005792035,0.003210608,0.9134361,0.009104955,0.0005016865,0.0002020427,0.06870674],"study_design_scores_gemma":[0.0003733452,0.00004630697,0.0001926852,0.00002222346,0.0000577372,0.000001075623,0.0001597079,0.9957875,0.001822385,0.0001522204,0.00114207,0.0002427549],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.7428415,0.01170263,0.2440827,0.00004113886,0.00009107063,0.0004886743,0.0001286303,0.0001823292,0.0004414085],"genre_scores_gemma":[0.997143,0.001626044,0.0007657121,0.0000196479,0.00001600359,0.00005929488,0.0001622711,0.00003784713,0.0001701997],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.2543015,"threshold_uncertainty_score":0.7918245,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W4323364508","doi":"10.1016/j.sse.2023.108626","title":"Understanding conditions for the single electron regime in 28 nm FD-SOI quantum dots: Interpretation of experimental data with 3D quantum TCAD simulations","year":2023,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"Quantum and electron transport phenomena","field":"Physics and Astronomy","cited_by":6,"is_retracted":false,"has_abstract":false,"routes":{"ca_aff":true,"ca_fund":true,"ca_venue":false,"about_ca":false},"ca_institutions":"Nanoacademic Technologies; Institut quantique; Université de Sherbrooke","funders":"Natural Sciences and Engineering Research Council of Canada; Canada First Research Excellence Fund","keywords":"Quantum dot; Silicon on insulator; Electron; Quantum; Optoelectronics; Silicon; Materials science; Quantum computer; Nanotechnology; Physics; Quantum mechanics","retraction":null,"screen_n_in":null,"score":{"opus":0.05651594617462322,"gpt":0.3176397005414847,"spread":0.2611237543668614,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.0003835604,0.0003013802,0.0003624376,0.0002270264,0.0003512806,0.00006953064,0.0004767548,0.00005558088,0.00005512665],"category_scores_gemma":[0.000009591095,0.0002528735,0.00009477094,0.0008245665,0.0001468957,0.000449373,0.00005122369,0.000362322,0.000008984741],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.0003180143,"about_ca_system_score_gemma":0.0003635052,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.00008453671,"about_ca_topic_score_gemma":0.0004020733,"domain_scores_codex":[0.9976356,0.00007025729,0.0005859074,0.0005056749,0.0002685188,0.000934042],"domain_scores_gemma":[0.9985388,0.0004186601,0.0002857319,0.0006139934,0.00007258952,0.0000702301],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"theoretical_or_conceptual","study_design_gemma":"simulation_or_modeling","study_design_scores_codex":[0.001833018,0.001495233,0.003523031,0.0001415544,0.001294251,0.000006230172,0.008454631,0.1839809,0.1029307,0.6924207,0.002520694,0.001399091],"study_design_scores_gemma":[0.002384979,0.00138022,0.0002597308,0.0001040786,0.0001745074,0.000002062001,0.003766509,0.8852052,0.01841222,0.08525106,0.002491907,0.0005675236],"study_design_candidate":"simulation_or_modeling","study_design_consensus":null,"genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.8285651,0.0009226527,0.1663274,0.0007084626,0.0001594777,0.001569655,0.001080485,0.0001665965,0.0005001422],"genre_scores_gemma":[0.9971504,0.00005899183,0.00007453407,0.00003283146,0.00006803426,0.0001117563,0.002316564,0.00007167822,0.000115275],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.7012243,"threshold_uncertainty_score":0.9999924,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W4386701110","doi":"10.1016/j.sse.2023.108779","title":"A tunable and versatile 28 nm FD-SOI crossbar output circuit for low power analog SNN inference with eNVM synapses","year":2023,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"Advanced Memory and Neural Computing","field":"Engineering","cited_by":6,"is_retracted":false,"has_abstract":false,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"Institut interdisciplinaire d'innovation technologique; Université de Sherbrooke","funders":"Agence Nationale de la Recherche","keywords":"Silicon on insulator; Crossbar switch; Spin-transfer torque; Electrical engineering; Computer science; CMOS; Capacitance; Spice; Electronic engineering; Magnetoresistive random-access memory; Materials science; Engineering; Optoelectronics; Computer hardware; Physics; Silicon; Random access memory","retraction":null,"screen_n_in":null,"score":{"opus":0.01354518622837636,"gpt":0.2519372507036726,"spread":0.2383920644752963,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.0001519942,0.0002650837,0.0002880093,0.0001082606,0.000224125,0.00007788166,0.0001541365,0.00007238024,0.00001121949],"category_scores_gemma":[0.00005533647,0.0002545746,0.00005092614,0.0003739003,0.00006276826,0.0002446851,0.00005146471,0.0003070334,0.00002412371],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.0001043873,"about_ca_system_score_gemma":0.00008695149,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.000003164895,"about_ca_topic_score_gemma":0.00003845452,"domain_scores_codex":[0.9983656,0.00001625202,0.000221085,0.0003426355,0.000139836,0.0009145952],"domain_scores_gemma":[0.9993145,0.0002317707,0.0000507319,0.0002259518,0.00006283708,0.0001141993],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","study_design_scores_codex":[0.0002598586,0.00005763783,0.0006606943,0.000802526,0.0003539753,0.0001690003,0.003405824,0.9158546,0.05777862,0.00270559,0.002023255,0.0159284],"study_design_scores_gemma":[0.006487752,0.00400785,0.00260448,0.0005887399,0.0002175283,0.0001980824,0.001066066,0.489673,0.3619546,0.03748635,0.09197882,0.003736734],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9782482,0.0007298088,0.01941845,0.00003537212,0.0001276814,0.000354933,0.00004454736,0.0006455747,0.000395397],"genre_scores_gemma":[0.9985059,0.0003537665,0.0002026909,0.00006087475,0.00004313474,0.00004109122,0.00004188855,0.0000697645,0.0006808362],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.4261816,"threshold_uncertainty_score":0.9999906,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2131132315","doi":"10.1016/j.sse.2004.05.033","title":"Degradation and recovery of SiGe HBTs following radiation and hot-carrier stressing","year":2004,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"Semiconductor materials and devices","field":"Engineering","cited_by":5,"is_retracted":false,"has_abstract":false,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"ON Semiconductor (Canada); National Research Council Canada; Institute for Microstructural Sciences","funders":"","keywords":"Materials science; Degradation (telecommunications); Irradiation; Optoelectronics; Radiation; Stress (linguistics); Radiation damage; Composite material; Electrical engineering; Optics","retraction":null,"screen_n_in":null,"score":{"opus":0.006264558053931052,"gpt":0.2230642775574007,"spread":0.2167997195034696,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00008785606,0.0001102971,0.0001562559,0.00006007975,0.00004666715,0.00005800626,0.00003305692,0.00005284634,0.000003528239],"category_scores_gemma":[0.00001530542,0.0001145708,0.00002475051,0.00007670124,0.00001390536,0.0003026593,0.00001076072,0.00006877167,5.907366e-7],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.00007333051,"about_ca_system_score_gemma":0.00003793629,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.00003891797,"about_ca_topic_score_gemma":0.00006152757,"domain_scores_codex":[0.9993895,0.00001257013,0.0001825375,0.0001228904,0.00008223354,0.0002102186],"domain_scores_gemma":[0.999793,0.00002355479,0.00004826679,0.00008072457,0.00001399257,0.00004045644],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.00002998028,0.00001173358,0.0008301109,0.0001821571,0.0001159175,0.000004743925,0.001503056,0.01816496,0.9616188,0.0004405633,0.00002180596,0.01707614],"study_design_scores_gemma":[0.001315492,0.0001540975,0.002882097,0.000151656,0.00007716635,0.00001608776,0.0002181757,0.005642425,0.9793282,0.00893681,0.0008579471,0.0004198847],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9913394,0.007598762,0.0006030157,0.00001301502,0.0002084689,0.00008325548,0.00001297686,0.00006404921,0.00007705774],"genre_scores_gemma":[0.9973896,0.002160725,0.0003494107,0.00001365356,0.00002737057,0.000003182991,0.00002321517,0.00002392788,0.000008959219],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.01770933,"threshold_uncertainty_score":0.467206,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W4308344324","doi":"10.1016/j.sse.2022.108506","title":"An atomistic modeling framework for valence change memory cells","year":2022,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"Advanced Memory and Neural Computing","field":"Engineering","cited_by":5,"is_retracted":false,"has_abstract":false,"routes":{"ca_aff":false,"ca_fund":true,"ca_venue":false,"about_ca":false},"ca_institutions":"","funders":"Natural Sciences and Engineering Research Council of Canada; National Supercomputing Center, Korea Institute of Science and Technology Information; Schweizerischer Nationalfonds zur Förderung der Wissenschaftlichen Forschung; Werner Siemens-Stiftung","keywords":"Conductance; Quantum tunnelling; Valence (chemistry); Materials science; Resistive random-access memory; Ab initio; Tin; Hysteresis; Condensed matter physics; Kinetic Monte Carlo; Diffusion; Chemical physics; Electrode; Monte Carlo method; Nanotechnology; Chemistry; Optoelectronics; Physics; Thermodynamics","retraction":null,"screen_n_in":null,"score":{"opus":0.02973627216023445,"gpt":0.2876106646047166,"spread":0.2578743924444822,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.0002178724,0.0002063571,0.0002038627,0.00006348667,0.0004032606,0.00002468447,0.000304236,0.00004422243,0.00002650777],"category_scores_gemma":[0.00001581949,0.0002514453,0.00007594474,0.0002025604,0.00001245376,0.000174814,0.00005882432,0.000615416,0.000005434034],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.0002384833,"about_ca_system_score_gemma":0.00003467849,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.000001189033,"about_ca_topic_score_gemma":0.000003355435,"domain_scores_codex":[0.9985286,0.0000392498,0.0002269441,0.0003032683,0.0001644747,0.0007374659],"domain_scores_gemma":[0.9994136,0.0001160333,0.00004244428,0.0002984165,0.00002722309,0.0001022791],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","study_design_scores_codex":[0.00003331836,0.00001805846,9.626593e-7,0.00007201541,0.00001373873,0.000006671705,0.0006431348,0.9737421,0.01779572,0.001027581,0.00002686047,0.006619803],"study_design_scores_gemma":[0.0001961158,0.0002075948,3.901835e-7,0.00001396735,0.00001563274,0.000009010746,0.0001178407,0.9267761,0.04095127,0.0297467,0.001666366,0.0002990195],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","genre_codex":"methods","genre_gemma":"empirical","genre_scores_codex":[0.341788,0.001802559,0.6546969,0.00002335168,0.0006091775,0.0004788135,0.00005167666,0.0005130852,0.00003643223],"genre_scores_gemma":[0.9934587,0.000272028,0.005388461,0.0002203245,0.0002496298,0.0002362585,0.00003099643,0.00009414037,0.00004941975],"genre_candidate":"empirical","genre_consensus":null,"teacher_disagreement_score":0.6516708,"threshold_uncertainty_score":0.9999938,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2992230486","doi":"10.1016/j.sse.2019.107728","title":"Optimization of GaAs/AlGaAs staircase avalanche photodiodes accounting for both electron and hole impact ionization","year":2019,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"Radiation Detection and Scintillator Technologies","field":"Physics and Astronomy","cited_by":5,"is_retracted":false,"has_abstract":false,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"University of Saskatchewan","funders":"Ministero dell’Istruzione, dell’Università e della Ricerca","keywords":"Avalanche photodiode; Impact ionization; Heterojunction; Avalanche diode; Optoelectronics; Photodiode; Noise (video); Ionization; Electron; Physics; Avalanche breakdown; Materials science; Breakdown voltage; Optics; Voltage; Computer science; Nuclear physics; Quantum mechanics","retraction":null,"screen_n_in":null,"score":{"opus":0.00527627793601455,"gpt":0.2597609331708716,"spread":0.2544846552348571,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0002053303,0.0001779381,0.0002485594,0.0001495103,0.0001186574,0.00007695281,0.0001008348,0.00006860808,0.0001092007],"category_scores_gemma":[0.00002086717,0.0001691036,0.00009695364,0.0002838332,0.00003395546,0.000258895,0.00001876334,0.0001535154,0.000004672378],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.00009593843,"about_ca_system_score_gemma":0.0001452349,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.00002516603,"about_ca_topic_score_gemma":0.000005743107,"domain_scores_codex":[0.9988924,0.0000264959,0.0002908777,0.0002653487,0.0001320512,0.0003928682],"domain_scores_gemma":[0.9992687,0.00005544718,0.0002794225,0.0002100992,0.0001448841,0.0000414644],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","study_design_scores_codex":[0.0001843883,0.0001048864,0.03779452,0.00008200397,0.0002389261,1.959978e-7,0.0004290697,0.9100709,0.0323115,0.005086126,0.0005321138,0.01316538],"study_design_scores_gemma":[0.00210489,0.0007967689,0.001728808,0.00002908881,0.00006256094,0.000002917871,0.0004391268,0.7118122,0.2748553,0.004949525,0.002705987,0.0005128044],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.950872,0.0002754048,0.04769886,0.00005446903,0.00006961895,0.0005493521,0.00004239207,0.0001019497,0.0003359448],"genre_scores_gemma":[0.9987401,0.0001019824,0.0007217266,0.00001695862,0.00004159792,0.0000285102,0.00004665785,0.00003193234,0.0002705195],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.2425438,"threshold_uncertainty_score":0.6895845,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W4386696993","doi":"10.1016/j.sse.2023.108777","title":"Simulation process flow for the implementation of industry-standard FD-SOI quantum dot devices","year":2023,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":5,"is_retracted":false,"has_abstract":false,"routes":{"ca_aff":true,"ca_fund":true,"ca_venue":false,"about_ca":false},"ca_institutions":"Nanoacademic Technologies; Institut quantique; Université de Sherbrooke","funders":"Natural Sciences and Engineering Research Council of Canada; Canada First Research Excellence Fund","keywords":"Silicon on insulator; Quantum dot; Qubit; Fabrication; Optoelectronics; Process (computing); Quantum dot laser; Semiconductor device fabrication; Quantum computer; Flow (mathematics); Semiconductor; Materials science; Quantum; Silicon; Computer science; Electronic engineering; Physics; Nanotechnology; Engineering; Quantum mechanics; Mechanics","retraction":null,"screen_n_in":null,"score":{"opus":0.02364990255060539,"gpt":0.3427472080202253,"spread":0.3190973054696199,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0003153307,0.0001786052,0.0001948981,0.00007837875,0.0001369262,0.00003774372,0.0002085773,0.00009395741,0.00004697913],"category_scores_gemma":[0.00001783633,0.0001515277,0.00006152334,0.0004582126,0.0000223401,0.0002356668,0.0000132796,0.0002398241,0.000006807831],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.0001322083,"about_ca_system_score_gemma":0.0001045623,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.000004443198,"about_ca_topic_score_gemma":0.00009678213,"domain_scores_codex":[0.9986588,0.00001787712,0.0003749487,0.000186526,0.0002605687,0.0005012727],"domain_scores_gemma":[0.999265,0.0002368543,0.000116256,0.0001975288,0.0001453827,0.00003898152],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","study_design_scores_codex":[0.00002060272,0.000005548986,0.0002852733,0.0001723356,0.0001149259,4.273229e-7,0.0009261177,0.9707187,0.003190895,0.0006062021,0.0003004381,0.02365855],"study_design_scores_gemma":[0.0007568931,0.0001901385,0.0001917161,0.00003055218,0.00007697621,7.283993e-7,0.002184276,0.9287862,0.03294755,0.008854613,0.02570738,0.0002730179],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.887008,0.002640983,0.1069694,0.000127513,0.0006360454,0.001646544,0.0003562828,0.0005321359,0.00008317841],"genre_scores_gemma":[0.9989418,0.0004592081,0.0001181262,0.00004108317,0.00008803458,0.0001269098,0.0001125274,0.00005734766,0.00005493825],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.1119339,"threshold_uncertainty_score":0.6179118,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W4392104198","doi":"10.1016/j.sse.2024.108883","title":"Analysis and 3D TCAD simulations of single-qubit control in an industrially-compatible FD-SOI device","year":2024,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"Quantum and electron transport phenomena","field":"Physics and Astronomy","cited_by":5,"is_retracted":false,"has_abstract":false,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"Nanoacademic Technologies","funders":"","keywords":"Silicon on insulator; Qubit; Optoelectronics; Electronic engineering; Physics; Materials science; Computer science; Engineering; Quantum mechanics; Silicon; Quantum","retraction":null,"screen_n_in":null,"score":{"opus":0.01433213653742093,"gpt":0.2752298795522307,"spread":0.2608977430148098,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.0002678175,0.0002492378,0.0005469269,0.0004324463,0.00008188205,0.00010022,0.0001558208,0.00007584701,0.0002410041],"category_scores_gemma":[0.000002997474,0.0002502684,0.0001349226,0.001403283,0.00005867004,0.0003160104,0.00001316313,0.0004431392,0.000005740159],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.00008740918,"about_ca_system_score_gemma":0.0003068307,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.0002679507,"about_ca_topic_score_gemma":0.001665994,"domain_scores_codex":[0.9981155,0.000094715,0.0005548444,0.0004181256,0.0001893459,0.0006274798],"domain_scores_gemma":[0.9992808,0.0001567444,0.0001119459,0.0002501125,0.00007688014,0.0001235304],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"observational","study_design_gemma":"simulation_or_modeling","study_design_scores_codex":[0.0006981475,0.002486196,0.3750047,0.0003140288,0.006976553,0.00003685733,0.006839379,0.3132071,0.1078027,0.0681912,0.0001042337,0.1183389],"study_design_scores_gemma":[0.005784818,0.00190339,0.01545435,0.00015182,0.003245817,0.000002076496,0.0004278933,0.8934483,0.01845802,0.048123,0.01135598,0.001644563],"study_design_candidate":"simulation_or_modeling","study_design_consensus":null,"genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9820312,0.001085269,0.01554756,0.0001127794,0.0000433165,0.0002814984,0.0002256895,0.00005326511,0.000619467],"genre_scores_gemma":[0.9994088,0.00002689942,0.00008200856,0.00003732176,0.00008317523,0.00001503226,0.0002039667,0.0000342729,0.0001084653],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.5802412,"threshold_uncertainty_score":0.9999949,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2990340554","doi":"10.1016/j.sse.2019.107737","title":"In-situ heater for thermal assist recovery of MOS devices in 28 nm UTBB FD-SOI CMOS technology","year":2019,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"Semiconductor materials and devices","field":"Engineering","cited_by":4,"is_retracted":false,"has_abstract":false,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"Institut interdisciplinaire d'innovation technologique; Université de Sherbrooke","funders":"","keywords":"Wafer; Materials science; NMOS logic; CMOS; Optoelectronics; Silicon on insulator; Thermal; Transistor; Gate oxide; Resistor; Oxide; Silicon; Electrical engineering; Electronic engineering; Voltage; Engineering","retraction":null,"screen_n_in":null,"score":{"opus":0.006022375635875895,"gpt":0.2324503325107118,"spread":0.2264279568748359,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0002281512,0.000222601,0.0004461364,0.0002733119,0.00001634612,0.00002926078,0.000241797,0.0001929815,0.00006475003],"category_scores_gemma":[0.00001057632,0.0002151222,0.00006454763,0.0002844652,0.00002827977,0.0002527707,0.00003929887,0.0002142002,0.00003545682],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.000167743,"about_ca_system_score_gemma":0.00007681373,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.00003396727,"about_ca_topic_score_gemma":0.0009373007,"domain_scores_codex":[0.998484,0.00002298798,0.0004904792,0.0002584222,0.00009948377,0.0006446159],"domain_scores_gemma":[0.99951,0.00006045296,0.00008518086,0.0002737684,0.00003996202,0.00003055942],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.00009438019,0.00004123701,0.004565983,0.0003514158,0.00005894877,0.000004353936,0.0002132123,0.007308428,0.9851069,0.0004558766,0.00009890884,0.00170038],"study_design_scores_gemma":[0.001193556,0.0002809679,0.00177158,0.0001044942,0.00001673234,0.000007475011,0.0001309848,0.00363764,0.9786524,0.003902348,0.009894795,0.0004070023],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9960047,0.002092564,0.00004474933,0.0001034469,0.0004216206,0.0004256792,0.0000240476,0.0001036505,0.0007795581],"genre_scores_gemma":[0.9990479,0.0002905192,0.000276789,0.00008661598,0.00004398437,0.00006351424,0.0000190451,0.00005943516,0.0001122253],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.009795886,"threshold_uncertainty_score":0.8772429,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2108852686","doi":"10.1016/j.sse.2012.04.026","title":"Factors for the polarization lifetime in metal–ferroelectric–insulator–semiconductor capacitors","year":2012,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"Ferroelectric and Piezoelectric Materials","field":"Materials Science","cited_by":4,"is_retracted":false,"has_abstract":false,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"Geological Survey of Canada","funders":"","keywords":"Capacitor; Ferroelectricity; Materials science; Semiconductor; Polarization (electrochemistry); Insulator (electricity); Optoelectronics; Ferroelectric capacitor; Metal; Electrical engineering; Voltage; Engineering; Metallurgy; Dielectric; Chemistry","retraction":null,"screen_n_in":null,"score":{"opus":0.02692157668971335,"gpt":0.2756652988147411,"spread":0.2487437221250277,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.001833491,0.0005225828,0.0006323585,0.0002839334,0.0004270368,0.0001601657,0.0006656222,0.0002413903,0.0003434594],"category_scores_gemma":[0.0006930278,0.0003710993,0.0001946592,0.001079555,0.00009756041,0.0006665479,0.0000627565,0.0003999861,0.00008526261],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.0005546315,"about_ca_system_score_gemma":0.0004356239,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.0001932909,"about_ca_topic_score_gemma":0.00009743869,"domain_scores_codex":[0.9955974,0.0003180732,0.0008089879,0.0005291684,0.0004848999,0.002261535],"domain_scores_gemma":[0.9978454,0.0008707715,0.0003624728,0.000537033,0.0001512307,0.0002330515],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.0001460331,0.0002032553,0.003792845,0.00004834426,0.0000808527,8.180652e-7,0.00183988,0.0001744554,0.9872761,0.004130381,0.001042924,0.001264091],"study_design_scores_gemma":[0.00100146,0.0004632952,0.003425882,0.00001481517,0.0001493402,0.00001287406,0.0001518415,0.002964116,0.9722525,0.002231721,0.01651454,0.000817601],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9865029,0.005447682,0.004573835,0.0001694136,0.001612265,0.001289508,0.0000846496,0.0001858574,0.0001339312],"genre_scores_gemma":[0.9975427,0.0002664072,0.0001509489,0.000215577,0.000427624,0.0001906987,0.00008203736,0.0000995867,0.0010244],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.01547161,"threshold_uncertainty_score":0.9998741,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2069231649","doi":"10.1016/j.sse.2014.08.001","title":"Alternative isolation-feature geometries and polarization-engineering of polar AlGaN/GaN HFETs","year":2014,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":4,"is_retracted":false,"has_abstract":false,"routes":{"ca_aff":true,"ca_fund":true,"ca_venue":false,"about_ca":false},"ca_institutions":"Concordia University","funders":"Natural Sciences and Engineering Research Council of Canada; CMC Microsystems","keywords":"Polar; Polarization (electrochemistry); Isolation (microbiology); Optoelectronics; Materials science; Wide-bandgap semiconductor; Feature (linguistics); Computer science; Physics; Chemistry; Biology; Astronomy; Bioinformatics","retraction":null,"screen_n_in":null,"score":{"opus":0.004267138411887301,"gpt":0.2215993894466519,"spread":0.2173322510347646,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0001704399,0.0001905721,0.0002730467,0.0001246189,0.0000828273,0.00006416978,0.0001225431,0.00004865935,0.00005824155],"category_scores_gemma":[0.00002157274,0.0001856638,0.00005347441,0.0002093913,0.00003091865,0.0001959461,0.00002996394,0.0001687048,0.000004675444],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.00001951161,"about_ca_system_score_gemma":0.00006159073,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.0001579838,"about_ca_topic_score_gemma":0.00001404975,"domain_scores_codex":[0.9990367,0.00003126447,0.0002358512,0.0002186552,0.0001331744,0.0003443328],"domain_scores_gemma":[0.9993755,0.00007852566,0.0001826346,0.0001762441,0.0001117746,0.00007529854],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.00004195295,0.00008886972,0.0350603,0.000138887,0.0003992816,6.530273e-7,0.001216008,0.00616543,0.8852848,0.06888029,0.0001595017,0.002564018],"study_design_scores_gemma":[0.001676908,0.0004443942,0.006785712,0.0000949294,0.0001305965,0.000003618155,0.0001823687,0.03288969,0.9046617,0.02603306,0.02622719,0.0008698927],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.971164,0.0004309696,0.02755634,0.00009976099,0.0001756617,0.0001599914,0.0001254267,0.00003339842,0.000254399],"genre_scores_gemma":[0.9989923,0.00003327598,0.0003936296,0.00004054398,0.0001542308,0.000005515637,0.0001501972,0.0000328369,0.0001974505],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.04284723,"threshold_uncertainty_score":0.7571148,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W3045366189","doi":"10.1016/j.sse.2020.107869","title":"New accurate approximation of the Einstein Relation for heavily-doped semiconductor devices","year":2020,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"Advanced Materials and Semiconductor Technologies","field":"Materials Science","cited_by":3,"is_retracted":false,"has_abstract":false,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"University of Waterloo","funders":"","keywords":"Einstein relation; Einstein; Degeneracy (biology); Doping; Relation (database); Semiconductor; Scaling; Physics; Quality (philosophy); Fermi Gamma-ray Space Telescope; Constant (computer programming); Condensed matter physics; Theoretical physics; Statistical physics; Quantum mechanics; Mathematics; Computer science; Geometry; Data mining; Bioinformatics","retraction":null,"screen_n_in":null,"score":{"opus":0.02900415011866639,"gpt":0.2793643605244826,"spread":0.2503602104058162,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000199723,0.0001968324,0.0003070612,0.00003057495,0.0001434188,0.00006093986,0.0004781964,0.0001077932,0.0000685267],"category_scores_gemma":[0.000271231,0.0001440762,0.00008666493,0.0002420179,0.00007063444,0.0004421602,0.0001107355,0.0001415552,0.0000153546],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.00008650521,"about_ca_system_score_gemma":0.0002533669,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.00001397241,"about_ca_topic_score_gemma":0.00003477961,"domain_scores_codex":[0.9985151,0.00005598618,0.0004792577,0.0003438961,0.0001922197,0.0004135837],"domain_scores_gemma":[0.9989982,0.00007082713,0.0004463399,0.0003102044,0.0001129617,0.0000614563],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.00008519398,0.00000973032,0.00001983607,0.00008596898,0.000009003023,1.562776e-7,0.0004373124,0.001168657,0.9924342,0.004491412,0.0004492309,0.0008093126],"study_design_scores_gemma":[0.0004596077,0.0001699193,0.00003236413,0.00002652631,0.00002330608,0.000001746072,0.0001376106,0.001461915,0.9759322,0.01529306,0.006289741,0.0001720445],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.981836,0.0006523925,0.0144798,0.001568601,0.0003437897,0.0007555136,0.00008881805,0.0002214004,0.00005366535],"genre_scores_gemma":[0.9929487,0.0001272686,0.006334228,0.0002609726,0.00009392788,0.0000351262,0.00002769794,0.0000331381,0.0001389873],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.01650202,"threshold_uncertainty_score":0.5875257,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W4293032730","doi":"10.1016/j.sse.2022.108438","title":"Tunneling leakage in ultrashort-channel MOSFETs—From atomistics to continuum modeling","year":2022,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"Semiconductor materials and devices","field":"Engineering","cited_by":3,"is_retracted":false,"has_abstract":false,"routes":{"ca_aff":true,"ca_fund":true,"ca_venue":false,"about_ca":false},"ca_institutions":"McGill University; Nanoacademic Technologies","funders":"National Research Council Canada; Natural Sciences and Engineering Research Council of Canada; Fonds de recherche du Québec – Nature et technologies; Alliance de recherche numérique du Canada","keywords":"Leakage (economics); Quantum tunnelling; Optoelectronics; Materials science; Physics","retraction":null,"screen_n_in":null,"score":{"opus":0.0107323865638833,"gpt":0.2246790070971761,"spread":0.2139466205332928,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.0003120803,0.0002813868,0.0003822615,0.000156146,0.0001339411,0.00008518424,0.0003290466,0.00006135907,0.0001370908],"category_scores_gemma":[0.00002896877,0.0003395989,0.00006487915,0.0003148392,0.000009389635,0.0001144179,0.0001111427,0.0004668681,0.00002750184],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.0004266592,"about_ca_system_score_gemma":0.00007963756,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.0001847285,"about_ca_topic_score_gemma":0.0006840799,"domain_scores_codex":[0.9979869,0.00005089428,0.0005045212,0.0003698899,0.0002575747,0.000830205],"domain_scores_gemma":[0.9994346,0.00006039237,0.00004159113,0.000297637,0.0000369958,0.0001287168],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","study_design_scores_codex":[0.00003032812,0.00002005088,0.00004707734,0.00002089361,0.00003193556,0.00001953087,0.001050764,0.8008589,0.1973547,0.00006808931,0.0003276771,0.0001700899],"study_design_scores_gemma":[0.0005981797,0.00009363245,0.0000263094,0.00003095482,0.00002480198,0.00001000232,0.000817211,0.9286838,0.05768472,0.005997428,0.005368008,0.0006649312],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9891499,0.0020196,0.006785144,0.00003946229,0.0008628429,0.0002880981,0.0002088628,0.0003288783,0.0003171817],"genre_scores_gemma":[0.998691,0.0003455485,0.0002338612,0.0002078971,0.0001457384,0.00009538818,0.0001113001,0.0001105788,0.00005864912],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.13967,"threshold_uncertainty_score":0.9999056,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2035115639","doi":"10.1016/s0038-1101(00)00134-9","title":"Effects of O2/N2O-plasma treatment on nitride films on strained Si","year":2000,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"Semiconductor materials and devices","field":"Engineering","cited_by":3,"is_retracted":false,"has_abstract":false,"routes":{"ca_aff":false,"ca_fund":true,"ca_venue":false,"about_ca":false},"ca_institutions":"","funders":"University of Tokyo; Ryerson University","keywords":"Nitride; Plasma; Materials science; Composite material; Physics; Quantum mechanics; Layer (electronics)","retraction":null,"screen_n_in":null,"score":{"opus":0.005705708426349376,"gpt":0.2196254731668914,"spread":0.213919764740542,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.00006149772,0.0002962557,0.0003559698,0.00008025344,0.00004267289,0.00003109119,0.0001280029,0.00008659123,0.0003551272],"category_scores_gemma":[0.00001008971,0.00025418,0.0000948721,0.0001233338,0.00002096777,0.00006171756,0.000004882936,0.0001253716,0.0001828535],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.000173236,"about_ca_system_score_gemma":0.00004849299,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.00002489926,"about_ca_topic_score_gemma":0.00002947838,"domain_scores_codex":[0.9987664,0.00003395029,0.0002737539,0.0002260418,0.0001687309,0.0005311454],"domain_scores_gemma":[0.9994528,0.0001464424,0.00004342044,0.0002535266,0.00001850681,0.00008525926],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.0003239698,0.0002461551,0.000009078666,0.0002356273,0.0002762868,0.00003666147,0.0005359419,0.0573177,0.9198551,0.0006091017,0.0008064403,0.01974791],"study_design_scores_gemma":[0.001177613,0.001378967,0.00007979917,0.00005953664,0.00003870487,0.000004006126,0.00001193651,0.003812292,0.9839702,0.0005088466,0.008700652,0.0002574662],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9949931,0.0006303159,0.000005052856,0.00001534091,0.0002381245,0.0002993759,0.00004447209,0.0002256661,0.003548537],"genre_scores_gemma":[0.9972147,0.001861683,0.00005333858,0.00006678341,0.00007521153,0.00003391036,0.00003589887,0.00006430544,0.000594112],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.06411506,"threshold_uncertainty_score":0.9999911,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W1989855709","doi":"10.1016/j.sse.2005.01.013","title":"Ion implantation dose high-resolution monitoring in Si wafers using laser infrared photothermal radiometry with lock-in common-mode-rejection demodulation","year":2005,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"Ion-surface interactions and analysis","field":"Engineering","cited_by":2,"is_retracted":false,"has_abstract":false,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"University of Toronto","funders":"","keywords":"Wafer; Materials science; Ion implantation; Demodulation; Photothermal therapy; Ion; Optics; Infrared; Optoelectronics; Laser; Radiometry; Lock (firearm); Chemistry; Nanotechnology; Electrical engineering; Physics","retraction":null,"screen_n_in":null,"score":{"opus":0.006592163174595163,"gpt":0.2538244277463755,"spread":0.2472322645717803,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.0001809594,0.0002311143,0.0002610217,0.0006228072,0.0001251961,0.00007852158,0.00007780833,0.0001171511,0.00001557368],"category_scores_gemma":[0.000005746423,0.0002494825,0.00005455388,0.001046231,0.00001550438,0.0007405229,0.00001066389,0.0004156508,0.00000887257],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.001821534,"about_ca_system_score_gemma":0.00005596083,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.001033519,"about_ca_topic_score_gemma":0.004232291,"domain_scores_codex":[0.9985281,0.00006299598,0.0004316814,0.000243376,0.0002160826,0.0005177922],"domain_scores_gemma":[0.9995881,0.00004165983,0.0000976603,0.000169114,0.00005220215,0.00005127368],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","study_design_scores_codex":[0.0001078763,0.0000453977,0.004279849,0.00002010352,0.0000462182,0.000005491059,0.0003585572,0.9226834,0.06637067,0.000006941997,0.000008872586,0.006066686],"study_design_scores_gemma":[0.0008975985,0.00005976814,0.008466493,0.00008968246,0.00003267534,0.00002005204,0.0001423516,0.8991082,0.09063559,0.0001385243,0.0001262641,0.0002828309],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9877379,0.0002201521,0.01134965,0.00002201691,0.0002035743,0.0002044456,0.000009713961,0.0001366145,0.0001159445],"genre_scores_gemma":[0.9980611,0.0003171212,0.001259015,0.000008947715,0.0001307472,0.00001956395,0.0000743994,0.00005587774,0.00007317728],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.02426492,"threshold_uncertainty_score":0.9999958,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2115856956","doi":"10.1016/j.sse.2006.04.017","title":"Monitoring the self-heating in a high frequency GaN HFET","year":2006,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":1,"is_retracted":false,"has_abstract":false,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"Institute for Microstructural Sciences","funders":"","keywords":"Materials science; Optoelectronics","retraction":null,"screen_n_in":null,"score":{"opus":0.006914204277505058,"gpt":0.242637943945624,"spread":0.2357237396681189,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0002745657,0.0002254026,0.000244534,0.000055239,0.0001724369,0.0001249015,0.0002496139,0.00004225509,0.00009068377],"category_scores_gemma":[0.000002844601,0.0001800695,0.00007477385,0.0002256619,0.00002282433,0.0001475878,0.00002967031,0.0002996131,0.00003086401],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.0001276729,"about_ca_system_score_gemma":0.0001875878,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.003930436,"about_ca_topic_score_gemma":0.000246803,"domain_scores_codex":[0.9983488,0.00008438237,0.0003884742,0.0002783278,0.0001589202,0.0007411257],"domain_scores_gemma":[0.9994024,0.00006587559,0.0001531268,0.0002859926,0.00004800055,0.00004459349],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.00003776217,0.0005018613,0.3235152,0.0001031378,0.0002164516,0.00002041541,0.002042508,0.006978203,0.5916549,0.06803959,0.0004146904,0.006475308],"study_design_scores_gemma":[0.002302393,0.0002088999,0.02537006,0.0001677282,0.0001092963,0.000005170913,0.0009208638,0.001045033,0.7730517,0.1890151,0.006631379,0.001172301],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9966161,0.0004266051,0.0000806609,0.0001371912,0.0003176216,0.0002493908,0.00002466448,0.00007333234,0.002074382],"genre_scores_gemma":[0.9987106,0.00003280632,0.0002760622,0.00003051381,0.0006478511,0.00005116808,0.00003672986,0.00003990009,0.0001744039],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.2981451,"threshold_uncertainty_score":0.7343022,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W2766496230","doi":"10.1016/j.sse.2017.10.023","title":"TiOx-based thin-film transistors prepared by femtosecond laser pre-annealing","year":2017,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"Thin-Film Transistor Technologies","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":false,"routes":{"ca_aff":false,"ca_fund":true,"ca_venue":false,"about_ca":false},"ca_institutions":"","funders":"Institute for Information and Communications Technology Promotion; Information Technology Research Centre; Ministry of Trade, Industry and Energy; Ministry of Education and Human Resources Development; Korea Institute of Energy Technology Evaluation and Planning; Ministry of Education; Ministry of Science, ICT and Future Planning; National Research Foundation of Korea","keywords":"Materials science; Thin-film transistor; Femtosecond; Annealing (glass); Optoelectronics; Amorphous solid; Semiconductor; Laser; Thin film; Transistor; Nanotechnology; Optics; Layer (electronics); Composite material; Crystallography; Electrical engineering","retraction":null,"screen_n_in":null,"score":{"opus":0.006940705987001145,"gpt":0.2320266925190488,"spread":0.2250859865320477,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.000298969,0.0005394781,0.0005263732,0.0001591375,0.000560098,0.0002467754,0.001170701,0.000345014,0.00008062507],"category_scores_gemma":[0.00008632537,0.0005974454,0.0002298598,0.0001384183,0.0002181637,0.0004487606,0.00003816569,0.000883256,0.00005484933],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.0005691101,"about_ca_system_score_gemma":0.0001772388,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.00004949563,"about_ca_topic_score_gemma":0.0009904245,"domain_scores_codex":[0.9972926,0.00004146446,0.0005195782,0.0005661143,0.0003536427,0.001226585],"domain_scores_gemma":[0.9980355,0.00006841702,0.0001611352,0.001500747,0.00007562633,0.0001585794],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"simulation_or_modeling","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.0003276749,0.0002098433,0.0005786549,0.0007317624,0.0007924722,0.00007272251,0.003125564,0.8178148,0.1161339,0.0004931467,0.05021855,0.009500975],"study_design_scores_gemma":[0.002052102,0.0003001049,0.0004892591,0.00009273671,0.0001482156,0.00001004252,0.00008969357,0.1946868,0.6626508,0.001906279,0.1361582,0.001415781],"study_design_candidate":"simulation_or_modeling","study_design_consensus":null,"genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9710302,0.005340362,0.01283091,0.0004957491,0.0009518186,0.0007138503,0.0003538294,0.004054847,0.004228374],"genre_scores_gemma":[0.9971387,0.0004575351,0.0008001159,0.00009055658,0.00004800124,0.0000917726,0.00008908716,0.0001924598,0.001091763],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.6231279,"threshold_uncertainty_score":0.9996477,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W4407357202","doi":"10.1016/j.sse.2025.109082","title":"Degradation mechanisms for static and dynamic characteristics in 1.2 kV 4H-SiC MOSFETs under repetitive short-circuit tests","year":2025,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"Silicon Carbide Semiconductor Technologies","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":false,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"University of Toronto","funders":"Jiangsu Provincial Key Research and Development Program; Joint Project of Industry-University-Research of Jiangsu Province; China Scholarship Council","keywords":"Degradation (telecommunications); Materials science; MOSFET; Optoelectronics; Electrical engineering; Electronic engineering; Engineering; Transistor; Voltage","retraction":null,"screen_n_in":null,"score":{"opus":0.01021698030372601,"gpt":0.2627710303705105,"spread":0.2525540500667844,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.0002014758,0.0002765498,0.0003528591,0.0003232092,0.00005654231,0.00006116053,0.000185224,0.0001710641,0.000004020582],"category_scores_gemma":[0.0001749798,0.0003185238,0.00004505439,0.0003849783,0.00005803044,0.0001619166,0.0000445217,0.0003780256,0.000003119134],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.0007124322,"about_ca_system_score_gemma":0.0001351524,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.000006535281,"about_ca_topic_score_gemma":0.0005543149,"domain_scores_codex":[0.9984637,0.00002431673,0.0004092322,0.0003693738,0.00011657,0.0006167304],"domain_scores_gemma":[0.999305,0.0002143004,0.00005003839,0.0003168555,0.00007324789,0.00004060479],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"theoretical_or_conceptual","study_design_scores_codex":[0.00004417543,0.00006907468,0.0008441814,0.0004822715,0.0002710545,0.0000178713,0.0004943453,0.004092796,0.8575333,0.06567545,0.000218905,0.07025652],"study_design_scores_gemma":[0.001362811,0.0003132266,0.008512514,0.0002868859,0.0001383778,0.00002289695,0.0008936129,0.3455375,0.2317705,0.4095938,0.0005432158,0.001024651],"study_design_candidate":"bench_or_experimental","study_design_consensus":null,"genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9566793,0.001004088,0.04037245,0.0001441737,0.000316479,0.0006838856,0.00007025324,0.0006100711,0.0001193293],"genre_scores_gemma":[0.9977323,0.001194614,0.0004242943,0.00009386109,0.000006828085,0.0001557639,0.0001006568,0.00006411449,0.0002275875],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.6257629,"threshold_uncertainty_score":0.9999267,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W4410816239","doi":"10.1016/j.sse.2025.109156","title":"Preliminary numerical study on magnet gate in MOS FD-SOI technology for quantum and sensor applications","year":2025,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":false,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"Institut interdisciplinaire d'innovation technologique; Université de Sherbrooke","funders":"","keywords":"Silicon on insulator; Optoelectronics; Magnet; Physics; Quantum; Materials science; Electrical engineering; Engineering physics; Engineering; Silicon; Quantum mechanics","retraction":null,"screen_n_in":null,"score":{"opus":0.009627530095720543,"gpt":0.2832269141038036,"spread":0.2735993840080831,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0001040445,0.0001933671,0.0002431335,0.0002016379,0.00007315571,0.00001962493,0.0001631655,0.00008566874,0.00000473247],"category_scores_gemma":[0.00001015227,0.0002064773,0.00002541688,0.0004275307,0.00003239768,0.00005818259,0.00002778153,0.0002935851,0.000006536108],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.0001570302,"about_ca_system_score_gemma":0.00004011937,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.000002152531,"about_ca_topic_score_gemma":0.000008376078,"domain_scores_codex":[0.9988282,0.00001917735,0.0002804786,0.0003208331,0.00007562717,0.0004756812],"domain_scores_gemma":[0.9995314,0.00008638707,0.00003424358,0.0002825503,0.00003051881,0.00003490561],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","study_design_scores_codex":[0.0009401446,0.00345617,0.01104213,0.001506319,0.001218623,0.00007812829,0.003662627,0.4108168,0.09942104,0.1259571,0.003685522,0.3382154],"study_design_scores_gemma":[0.007896383,0.007071433,0.002446141,0.0002004307,0.000304773,0.00003242149,0.005579092,0.5462423,0.03252207,0.1523424,0.2432839,0.002078647],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.7834171,0.006320752,0.2042505,0.0002899383,0.0002077685,0.004045002,0.00005568528,0.0005710308,0.0008422445],"genre_scores_gemma":[0.997879,0.0004167752,0.0003383137,0.00007698376,0.00001826151,0.000952656,0.00001349196,0.00003881375,0.0002657201],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.3361367,"threshold_uncertainty_score":0.8419899,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W4414077628","doi":"10.1016/j.sse.2025.109230","title":"Silicon nanowire field-effect transistor biosensors with bowtie antenna","year":2025,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"Nanowire Synthesis and Applications","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":true,"routes":{"ca_aff":false,"ca_fund":true,"ca_venue":false,"about_ca":false},"ca_institutions":"","funders":"China Scholarship Council; Helmholtz-Alberta Initiative; Helmholtz-Gemeinschaft","keywords":"Biosensor; Nanowire; Transistor; Antenna (radio); Wafer; Silicon; Noise (video); Silicon on insulator","retraction":null,"screen_n_in":null,"score":{"opus":0.002309641400801917,"gpt":0.2113036956941788,"spread":0.2089940542933769,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0001113977,0.0002592939,0.0002956017,0.000119327,0.0001300361,0.00004077419,0.0001933611,0.0000995164,0.00002710893],"category_scores_gemma":[0.00001438359,0.0002228644,0.0001040094,0.0004342803,0.00003560642,0.00007324664,0.0000104137,0.0002709304,0.00003471988],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.0001452763,"about_ca_system_score_gemma":0.00009360482,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.00001067149,"about_ca_topic_score_gemma":0.0001756,"domain_scores_codex":[0.9988035,0.00003075138,0.0002308141,0.0002674531,0.0001203372,0.0005471448],"domain_scores_gemma":[0.9993619,0.0001395154,0.0000266553,0.0003644146,0.00003789288,0.0000696515],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.0002820976,0.0001905869,0.0005919863,0.0006643765,0.0008707857,0.00003009303,0.0006279928,0.006568602,0.8130501,0.007785293,0.01257855,0.1567595],"study_design_scores_gemma":[0.00076552,0.0003676869,0.0002239679,0.0001260798,0.0001202132,0.000009035417,0.00003821736,0.01586983,0.8313537,0.0006989078,0.1498948,0.0005320853],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9671248,0.004714216,0.01499609,0.001221013,0.0002505449,0.0007641906,0.00003001068,0.0009067855,0.009992367],"genre_scores_gemma":[0.9974735,0.0007580922,0.0001332876,0.0001402615,0.00003257171,0.0001048764,0.00001060844,0.00004913167,0.001297669],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.1562275,"threshold_uncertainty_score":0.9088145,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W4409846751","doi":"10.1016/j.sse.2025.109141","title":"Preliminary results on industrial 28nm FD-SOI phase change memory at cryogenic temperature","year":2025,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"Phase-change materials and chalcogenides","field":"Materials Science","cited_by":0,"is_retracted":false,"has_abstract":false,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"Institut interdisciplinaire d'innovation technologique; Institut quantique; Université de Sherbrooke","funders":"","keywords":"Cryogenic temperature; Silicon on insulator; Phase change; Phase-change memory; Materials science; Engineering physics; Optoelectronics; Physics; Composite material; Silicon","retraction":null,"screen_n_in":null,"score":{"opus":0.04111773925142814,"gpt":0.3132621882024729,"spread":0.2721444489510447,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.0009225702,0.000569238,0.0006277126,0.0002616452,0.0005412721,0.0002253826,0.0006560062,0.0004179869,0.0003874217],"category_scores_gemma":[0.0001519525,0.0005143895,0.0001934495,0.0004896185,0.0001444161,0.0002873074,0.0003462218,0.0005024538,0.0003770633],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.0006167926,"about_ca_system_score_gemma":0.0004345713,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.00005227053,"about_ca_topic_score_gemma":0.0001781489,"domain_scores_codex":[0.9960426,0.0003046285,0.0007538238,0.001002256,0.0004988936,0.001397782],"domain_scores_gemma":[0.9983194,0.000166787,0.0003053325,0.000848113,0.0001400111,0.0002202901],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.006994321,0.0004663224,0.000003277763,0.00006300671,0.00006503405,0.0001009911,0.0008696641,0.00006754383,0.9636113,0.0003351333,0.023528,0.003895395],"study_design_scores_gemma":[0.006028872,0.002427867,0.00001976587,0.0001628332,0.00009674978,0.0000263376,0.00007902086,0.0001194609,0.9421999,0.0009559833,0.04741613,0.0004671135],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9896711,0.002877634,0.000006772743,0.001379251,0.00208057,0.001039305,0.00104921,0.0003148477,0.001581303],"genre_scores_gemma":[0.9882899,0.0009131606,0.00004359517,0.001622787,0.001083921,0.0002892912,0.0003618641,0.00007685573,0.007318629],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.02388813,"threshold_uncertainty_score":0.9997308,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W3172281394","doi":"10.1016/j.sse.2021.108122","title":"Modeling current and voltage peaks generation in complementary resistive switching devices","year":2021,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"Advanced Memory and Neural Computing","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":false,"routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false},"ca_institutions":"Institut interdisciplinaire d'innovation technologique; Université de Sherbrooke","funders":"","keywords":"Joule heating; Electromigration; Resistive random-access memory; Resistive touchscreen; Materials science; Voltage; Current (fluid); Coupling (piping); Optoelectronics; Electrical engineering; Engineering","retraction":null,"screen_n_in":null,"score":{"opus":0.02577555206974884,"gpt":0.2871871212384757,"spread":0.2614115691687268,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.000124795,0.0001436397,0.0001548401,0.00005522865,0.00011657,0.00003771026,0.00005512196,0.00002273654,0.000004464184],"category_scores_gemma":[0.00001262319,0.0001648232,0.00002362826,0.0001424414,0.00000550818,0.0001853429,0.00004999293,0.0003575288,0.000001449525],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.0001355877,"about_ca_system_score_gemma":0.00003802514,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.000005199624,"about_ca_topic_score_gemma":0.0009408169,"domain_scores_codex":[0.9990405,0.00003160686,0.0002425593,0.0002276043,0.00009119877,0.0003664712],"domain_scores_gemma":[0.9997699,0.0000297061,0.00002233602,0.0001003998,0.00003234237,0.00004528722],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","study_design_scores_codex":[0.000006829679,0.00001037281,0.00009232684,0.0000678451,0.00001344846,0.00001943819,0.0005182406,0.882176,0.09388962,0.0002307493,0.0000145866,0.02296047],"study_design_scores_gemma":[0.0002607705,0.00001825856,0.00005120539,0.00004494448,0.000008373962,0.000008399375,0.000114859,0.9486507,0.04849319,0.001317981,0.000848664,0.0001826626],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.8857425,0.01024343,0.103638,0.00002588164,0.0001332492,0.00008397205,0.000004575796,0.0000787207,0.00004970332],"genre_scores_gemma":[0.9974746,0.001675174,0.0006105901,0.00004460684,0.00009576773,0.000005213388,0.00006194192,0.00002416691,0.000007978674],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.1117321,"threshold_uncertainty_score":0.6721295,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W4410644124","doi":"10.1016/j.sse.2025.109153","title":"Rigorous analysis on the operating mechanism of gate-injection ferroelectric flash","year":2025,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"Ferroelectric and Negative Capacitance Devices","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":false,"routes":{"ca_aff":false,"ca_fund":true,"ca_venue":false,"about_ca":false},"ca_institutions":"","funders":"Institute for Information and Communications Technology Promotion; Samsung; Ministry of Science and ICT, South Korea; IC Design Education Center; Information Technology Research Centre; National Research Foundation","keywords":"Flash (photography); Mechanism (biology); Ferroelectricity; Flash memory; Materials science; Optoelectronics; Computer science; Embedded system; Optics; Physics","retraction":null,"screen_n_in":null,"score":{"opus":0.006332516305171447,"gpt":0.2314008205716739,"spread":0.2250683042665024,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0003852635,0.000279056,0.0004215023,0.0005037332,0.0002104074,0.00005102323,0.0002925658,0.00009908708,0.00004165627],"category_scores_gemma":[0.00008630801,0.0002208743,0.0002010914,0.003534375,0.00003809132,0.0001049209,0.00001949668,0.0005316628,0.00002224794],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.000356889,"about_ca_system_score_gemma":0.0001092738,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.00001618504,"about_ca_topic_score_gemma":0.0002621986,"domain_scores_codex":[0.9983284,0.0001097046,0.0004129968,0.000290266,0.0002484344,0.0006101683],"domain_scores_gemma":[0.9991114,0.0002540884,0.00009078846,0.0003569411,0.0001454453,0.00004135284],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","study_design_scores_codex":[0.0001070712,0.0001348175,0.000196925,0.0001916576,0.004816602,0.000009008861,0.001654791,0.7239656,0.06713934,0.18522,0.002818481,0.01374571],"study_design_scores_gemma":[0.000313903,0.0003621425,0.0001647377,0.0000424235,0.0004193921,0.000002867875,0.0001513091,0.6583634,0.3253071,0.01352058,0.001033409,0.0003186947],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.905212,0.002917607,0.07465403,0.0002184776,0.0003084518,0.0004917399,0.00001693748,0.0003728643,0.01580783],"genre_scores_gemma":[0.9976915,0.0009788849,0.00008663346,0.0001936007,0.00002796046,0.00005246941,0.00001319579,0.00003231637,0.0009234897],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.2581678,"threshold_uncertainty_score":0.9006993,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null},{"id":"W4415654271","doi":"10.1016/j.sse.2025.109285","title":"3D simulation of charge defect impact on an industrial 28 nm FD-SOI quantum dot","year":2025,"lang":"en","type":"article","venue":"Solid-State Electronics","topic":"Advancements in Semiconductor Devices and Circuit Design","field":"Engineering","cited_by":0,"is_retracted":false,"has_abstract":false,"routes":{"ca_aff":true,"ca_fund":true,"ca_venue":false,"about_ca":false},"ca_institutions":"Nanoacademic Technologies; Institut quantique; Université de Sherbrooke","funders":"Canadian Nautical Research Society; Bundesbehörden der Schweizerischen Eidgenossenschaft; Canada Foundation for Innovation; Natural Sciences and Engineering Research Council of Canada; Fonds de recherche du Québec; Université de Sherbrooke; European Commission; Key Digital Technologies Joint Undertaking; Université Grenoble Alpes","keywords":"Quantum dot; Charge (physics); Sensitivity (control systems); Quantum; Quality (philosophy); Quantum computer; Quantum dot laser","retraction":null,"screen_n_in":null,"score":{"opus":0.02240492479308516,"gpt":0.3112807901526339,"spread":0.2888758653595487,"validation_status":"score_only:v0-immature-baseline"},"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.0002540342,0.0002913996,0.0003544785,0.0001774098,0.00007299233,0.00003394519,0.000226248,0.000155798,0.0001012072],"category_scores_gemma":[0.00002687329,0.0002770101,0.0001384178,0.0003979432,0.00002651535,0.0002486878,0.00001563505,0.0004445012,0.00002038539],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.0004200216,"about_ca_system_score_gemma":0.0001519622,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.00001347047,"about_ca_topic_score_gemma":0.00001501684,"domain_scores_codex":[0.9984152,0.00006460788,0.0004167608,0.0002770653,0.0002175005,0.0006088524],"domain_scores_gemma":[0.9992548,0.0001191156,0.0001005609,0.0003872075,0.00005841057,0.00007996579],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"simulation_or_modeling","study_design_gemma":"simulation_or_modeling","study_design_scores_codex":[0.0001233074,0.00009296149,0.0003739171,0.0000577458,0.0002671891,0.000002466232,0.0002166091,0.9323744,0.03959574,0.00232255,0.0003345915,0.02423855],"study_design_scores_gemma":[0.002537895,0.0014582,0.0002253293,0.0001664296,0.0001577994,0.000002239983,0.00006887697,0.8492908,0.1130541,0.007031053,0.02520874,0.0007985158],"study_design_candidate":"simulation_or_modeling","study_design_consensus":"simulation_or_modeling","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9879007,0.00118965,0.008147241,0.000007157127,0.0005636882,0.0004178539,0.00006282382,0.0002211588,0.001489676],"genre_scores_gemma":[0.9992125,0.0003050833,0.00002203473,0.00004910601,0.0001133161,0.0000142257,0.00007352694,0.00005226869,0.0001579344],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.08308354,"threshold_uncertainty_score":0.9999682,"prediction_status":"machine_predicted_unvalidated"},"labels":[],"label_agreement":null}]}