{"id":"W1618964557","doi":"10.1063/1.1608488","title":"Interfacial growth in HfOxNy gate dielectrics deposited using [(C2H5)2N]4Hf with O2 and NO","year":2003,"lang":"en","type":"article","venue":"Applied Physics Letters","topic":"Semiconductor materials and devices","field":"Engineering","cited_by":59,"is_retracted":false,"has_abstract":true,"ca_institutions":"Institute for Microstructural Sciences; University of Toronto","funders":"","keywords":"X-ray photoelectron spectroscopy; Analytical Chemistry (journal); Oxygen; Dielectric; Chemical vapor deposition; Materials science; Annealing (glass); Crystallization; Gate dielectric; Nitrogen; Thin film; Chemistry; Chemical engineering; Nanotechnology; Metallurgy; Optoelectronics; Organic chemistry","routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false,"invisible_to_affiliation_only":false},"retraction":null,"screen":null,"direct_labels":[],"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00004842012,0.0001994489,0.000207653,0.00007061684,0.00003844742,0.00007315593,0.00007101798,0.00004743891,0.000004025037],"category_scores_gemma":[0.00000342303,0.0001897452,0.0000166553,0.0002983,0.00003550266,0.0001136643,0.00001486003,0.0001329591,0.000009381579],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.00006065777,"about_ca_system_score_gemma":0.00001084764,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.00006424115,"about_ca_topic_score_gemma":0.000005475428,"domain_scores_codex":[0.9992449,0.00001381003,0.0001554542,0.0001983197,0.0001027615,0.0002846998],"domain_scores_gemma":[0.9997686,0.00002677851,0.00003472501,0.0001091737,0.00001472399,0.00004606214],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.00001953584,0.00001136503,0.0007606107,0.00006342681,0.00002916969,0.000004544594,0.0002266197,0.004315214,0.9928535,0.001517361,0.00005888881,0.0001397913],"study_design_scores_gemma":[0.00108151,0.00002568472,0.0006561065,0.0000585954,0.00003855672,0.000011353,0.00005120358,0.003960169,0.9928542,0.0003115859,0.0003240188,0.0006270453],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9948954,0.00004987269,0.002903017,0.0000112068,0.0001394159,0.0001437917,0.000002807044,0.00008892648,0.001765563],"genre_scores_gemma":[0.9983824,0.00001608768,0.0009442071,0.0004511918,0.0001395735,0.00001290536,0.000005849505,0.00004666106,0.000001154698],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.00348697,"threshold_uncertainty_score":0.7737584,"prediction_status":"machine_predicted_unvalidated"},"machine_scores":{"provisional":true,"baseline":true,"maturity_gate_passed":false,"score_opus":0.008315372462585421,"score_gpt":0.1816063473185311,"score_spread":0.1732909748559457,"validation_status":"score_only:v0-immature-baseline","note":"Baseline scores from an immature model (maturity gate not passed). Scores rank; they never assert a category."}}