{"id":"W2004423132","doi":"10.1063/1.2240736","title":"Ultralow surface recombination of c-Si substrates passivated by plasma-assisted atomic layer deposited Al2O3","year":2006,"lang":"en","type":"article","venue":"Applied Physics Letters","topic":"Silicon and Solar Cell Technologies","field":"Engineering","cited_by":720,"is_retracted":false,"has_abstract":true,"ca_institutions":"","funders":"Institute of Gender and Health; Stichting voor de Technische Wetenschappen; Koninklijke Nederlandse Akademie van Wetenschappen","keywords":"Passivation; Materials science; Recombination; Layer (electronics); Atomic layer deposition; Plasma; Silicon; Deposition (geology); Carrier lifetime; Oxide; Analytical Chemistry (journal); Optoelectronics; Nanotechnology; Chemistry; Metallurgy","routes":{"ca_aff":false,"ca_fund":true,"ca_venue":false,"about_ca":false,"invisible_to_affiliation_only":true},"retraction":null,"screen":null}