{"id":"W2034592733","doi":"10.4028/www.scientific.net/msf.483-485.141","title":"Epitaxial Growth of n-Type 4H-SiC on 3\" Wafers for Power Devices","year":2005,"lang":"en","type":"article","venue":"Materials science forum","topic":"Silicon Carbide Semiconductor Technologies","field":"Engineering","cited_by":17,"is_retracted":false,"has_abstract":true,"ca_institutions":"Infineon Technologies (Canada)","funders":"","keywords":"Wafer; Epitaxy; Materials science; Homogeneity (statistics); Doping; Optoelectronics; Nanotechnology; Computer science; Layer (electronics)","routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false,"invisible_to_affiliation_only":false},"retraction":null,"screen":null,"direct_labels":[],"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0003125852,0.0001417992,0.0002067627,0.0002176218,0.00006904317,0.00006085102,0.0005528711,0.00007929421,0.0001068714],"category_scores_gemma":[0.0002242179,0.0001246997,0.00003453994,0.00031763,0.0003008576,0.0003557445,0.00006821376,0.00004256374,0.00005649131],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.00009170511,"about_ca_system_score_gemma":0.00003436155,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.00000989389,"about_ca_topic_score_gemma":0.000006233256,"domain_scores_codex":[0.9988702,0.000005480712,0.0002461608,0.0002246183,0.0002101026,0.0004434641],"domain_scores_gemma":[0.9994948,0.0000430145,0.00005351434,0.0002798537,0.00008743091,0.00004141089],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.00001268,0.000008088689,0.000159308,0.00002610557,0.000004391651,2.402301e-7,0.00006428621,0.0002592977,0.9942138,0.003940931,0.0008726344,0.0004382942],"study_design_scores_gemma":[0.0001510162,0.0001384827,0.0006718722,0.00002312417,0.000004066459,0.000001967591,0.0001708776,0.0004072185,0.9967712,0.0006965403,0.0008160738,0.0001475207],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9967452,0.00005737184,0.00002326141,0.0003119813,0.001600439,0.0002258964,0.00003896929,0.0003663416,0.0006304986],"genre_scores_gemma":[0.999054,0.000007329873,0.0007312456,0.00009220809,0.00005567172,0.00001777281,0.000002135722,0.00002118649,0.0000184607],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.003244391,"threshold_uncertainty_score":0.5085105,"prediction_status":"machine_predicted_unvalidated"},"machine_scores":{"provisional":true,"baseline":true,"maturity_gate_passed":false,"score_opus":0.01393991863009502,"score_gpt":0.2426818410289505,"score_spread":0.2287419223988555,"validation_status":"score_only:v0-immature-baseline","note":"Baseline scores from an immature model (maturity gate not passed). Scores rank; they never assert a category."}}