{"id":"W2069467573","doi":"10.4028/www.scientific.net/msf.556-557.89","title":"Epitaxial Growth of 4H-SiC on (000-1) C-Face Substrates by Cold-Wall and Hot-Wall Chemical Vapor Deposition","year":2007,"lang":"en","type":"article","venue":"Materials science forum","topic":"Silicon Carbide Semiconductor Technologies","field":"Engineering","cited_by":2,"is_retracted":false,"has_abstract":true,"ca_institutions":"Infineon Technologies (Canada)","funders":"","keywords":"Epitaxy; Materials science; Doping; Wafer; Chemical vapor deposition; Homogeneity (statistics); Analytical Chemistry (journal); Growth rate; Optoelectronics; Composite material; Chemistry; Layer (electronics)","routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false,"invisible_to_affiliation_only":false},"retraction":null,"screen":null,"direct_labels":[],"prediction":{"model_version":"metacan-v3-hybrid-931329e0061c","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0002011447,0.0004401254,0.0005201951,0.0003653155,0.0003108383,0.0003581461,0.0006298234,0.0005096719,0.001242785],"category_scores_gemma":[0.0002287249,0.0002870598,0.0002958217,0.0003999496,0.0001521457,0.0001763849,0.0002156904,0.0004426575,0.0004427837],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.000297911,"about_ca_system_score_gemma":0.0003901,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.001716405,"about_ca_topic_score_gemma":0.00523231,"domain_scores_codex":[0.999733,0.0000117553,0.00001384995,0.00004801164,0.0001385631,0.00005472121],"domain_scores_gemma":[0.9997782,0.0000316537,0.00003961293,0.00003956796,0.00006873628,0.0000422269],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.00004523356,0.00001656766,0.000305054,0.00008169224,0.000008583399,0.0001069423,0.0000220652,0.0002048186,0.9971387,0.000131006,0.0001232679,0.001816057],"study_design_scores_gemma":[0.00001965878,0.0002349438,0.007517926,0.000011813,0.00001722355,0.0002720704,0.00002841651,0.002495645,0.9865754,0.0000317511,0.002782884,0.00001234425],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.988526,0.001052287,0.002529501,0.00003480465,0.00009606391,0.0001159085,0.001282352,0.00008558707,0.006277565],"genre_scores_gemma":[0.955951,0.001526016,0.03255361,0.0000500004,0.00004397401,0.000106531,0.002657475,0.00006072339,0.007050662],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.001716405,"threshold_uncertainty_score":0.004157543,"prediction_status":"machine_predicted_unvalidated"},"machine_scores":{"provisional":true,"baseline":true,"maturity_gate_passed":false,"score_opus":0.008208682580125852,"score_gpt":0.2148510845685555,"score_spread":0.2066424019884297,"validation_status":"score_only:v0-immature-baseline","note":"Baseline scores from an immature model (maturity gate not passed). Scores rank; they never assert a category."}}