{"id":"W2163613573","doi":"10.1002/pip.823","title":"Surface passivation of high‐efficiency silicon solar cells by atomic‐layer‐deposited Al<sub>2</sub>O<sub>3</sub>","year":2008,"lang":"en","type":"article","venue":"Progress in Photovoltaics Research and Applications","topic":"Silicon and Solar Cell Technologies","field":"Engineering","cited_by":453,"is_retracted":false,"has_abstract":true,"ca_institutions":"","funders":"Institute of Gender and Health; Stichting voor de Technische Wetenschappen","keywords":"Passivation; Materials science; Silicon; Layer (electronics); Aluminium; Aluminium oxide; Dielectric; Common emitter; Solar cell; Oxide; Aluminum oxide; Energy conversion efficiency; Optoelectronics; Stack (abstract data type); Atomic layer deposition; Analytical Chemistry (journal); Nanotechnology; Metallurgy; Chemistry","routes":{"ca_aff":false,"ca_fund":true,"ca_venue":false,"about_ca":false,"invisible_to_affiliation_only":true},"retraction":null,"screen":null,"machine_scores":{"provisional":true,"baseline":true,"maturity_gate_passed":false,"score_opus":0.02437038617911202,"score_gpt":0.2751451647110078,"score_spread":0.2507747785318957,"validation_status":"score_only:v0-immature-baseline","note":"Baseline scores from an immature model (maturity gate not passed). Scores rank; they never assert a category."}}