{"id":"W2241514912","doi":"10.4028/www.scientific.net/msf.821-823.512","title":"MOS Interface Characteristics of <i>In Situ</i> Ge-Doped 4H-SiC Homoepitaxial Layers","year":2015,"lang":"en","type":"article","venue":"Materials science forum","topic":"Silicon Carbide Semiconductor Technologies","field":"Engineering","cited_by":1,"is_retracted":false,"has_abstract":true,"ca_institutions":"Infineon Technologies (Canada)","funders":"European Commission","keywords":"Materials science; Doping; Substrate (aquarium); Chemical vapor deposition; Optoelectronics; Capacitor; Oxide; Quantum tunnelling; MOSFET; Layer (electronics); Nanotechnology; Voltage; Electrical engineering; Transistor; Metallurgy","routes":{"ca_aff":true,"ca_fund":false,"ca_venue":false,"about_ca":false,"invisible_to_affiliation_only":false},"retraction":null,"screen":null,"direct_labels":[],"prediction":{"model_version":"codex-gemma-dda1882f352a","candidate_categories":["metaepi_narrow"],"consensus_categories":[],"category_scores_codex":[0.0008804391,0.0002846985,0.0005130895,0.0004154481,0.00005345666,0.0001480754,0.001097654,0.0001685505,0.0000662007],"category_scores_gemma":[0.0005386246,0.0002782833,0.00004560202,0.0006310327,0.0006896937,0.0006132696,0.0003758857,0.0001226449,0.0001377807],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.0002611564,"about_ca_system_score_gemma":0.0001270338,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.00002161978,"about_ca_topic_score_gemma":0.0000450459,"domain_scores_codex":[0.9977044,0.00003365104,0.0006121063,0.0004019906,0.0004575047,0.0007903459],"domain_scores_gemma":[0.998894,0.00003973241,0.0001472069,0.0006517098,0.0001288827,0.0001384976],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.00001704112,0.00001966335,0.0003257344,0.00003492335,0.00000690487,0.000007404511,0.0003462374,0.0002849576,0.9969591,0.0005859191,0.0007834551,0.0006285834],"study_design_scores_gemma":[0.0003623114,0.00009787246,0.00251421,0.00006183853,0.000009096096,0.00001318446,0.0003267511,0.0008539226,0.9941451,0.0003702061,0.0009364163,0.0003091183],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9947726,0.0002201996,0.00008773695,0.0001263723,0.003000468,0.0003068464,0.00008872036,0.0005085945,0.0008884796],"genre_scores_gemma":[0.9993309,0.00003221763,0.0004192519,0.00002111014,0.00006580565,0.00003165706,0.000006225092,0.00004209858,0.00005069502],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.004558356,"threshold_uncertainty_score":0.9999669,"prediction_status":"machine_predicted_unvalidated"},"machine_scores":{"provisional":true,"baseline":true,"maturity_gate_passed":false,"score_opus":0.01838718190342283,"score_gpt":0.2395123792709312,"score_spread":0.2211251973675083,"validation_status":"score_only:v0-immature-baseline","note":"Baseline scores from an immature model (maturity gate not passed). Scores rank; they never assert a category."}}