{"id":"W2619017763","doi":"10.1109/led.2017.2696946","title":"AlGaN/GaN MOS-HEMT Device Fabricated Using a High Quality PECVD Passivation Process","year":2017,"lang":"en","type":"article","venue":"IEEE Electron Device Letters","topic":"GaN-based semiconductor devices and materials","field":"Physics and Astronomy","cited_by":30,"is_retracted":false,"has_abstract":true,"ca_institutions":"Institut interdisciplinaire d'innovation technologique; Université de Sherbrooke","funders":"Natural Sciences and Engineering Research Council of Canada","keywords":"Transconductance; High-electron-mobility transistor; Passivation; Materials science; Analytical Chemistry (journal); Electrical engineering; Nanotechnology; Chemistry; Voltage; Layer (electronics); Transistor; Organic chemistry; Engineering","routes":{"ca_aff":true,"ca_fund":true,"ca_venue":false,"about_ca":false,"invisible_to_affiliation_only":false},"retraction":null,"screen":null,"direct_labels":[],"prediction":{"model_version":"metacan-v3-hybrid-931329e0061c","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.00006979798,0.0001427658,0.0001300946,0.00006757356,0.0001408621,0.0002432407,0.0002262833,0.000245084,0.0008011021],"category_scores_gemma":[0.00008609108,0.00007399717,0.0001264879,0.0000941687,0.0001164212,0.0001986494,0.00007619746,0.0001873744,0.0003290551],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.0002164493,"about_ca_system_score_gemma":0.0001564617,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.0004364361,"about_ca_topic_score_gemma":0.0009599481,"domain_scores_codex":[0.9999597,0.000002639232,0.000002703779,0.00001258656,0.00001516356,0.000007155871],"domain_scores_gemma":[0.9999523,0.000008090799,0.00001079271,0.00001138184,0.00001265955,0.000004677569],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.00001305102,0.00000583788,0.00009481532,0.00002048819,0.00000296346,0.00006819067,0.00001145142,0.00006061343,0.9983124,0.0001928247,0.00006912587,0.001148202],"study_design_scores_gemma":[0.000006938609,0.00007585452,0.001458445,0.000002455875,0.00000845996,0.000264341,0.00001221607,0.001511914,0.9941475,0.00005246759,0.002455859,0.000003544233],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9835624,0.0003383551,0.01030219,0.0001156001,0.00006157922,0.00003851972,0.000299238,0.000160708,0.005121431],"genre_scores_gemma":[0.980081,0.0003262275,0.01635494,0.00003842597,0.0000173256,0.00001938497,0.0001986086,0.00002578565,0.002938436],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.0008011021,"threshold_uncertainty_score":0.002680004,"prediction_status":"machine_predicted_unvalidated"},"machine_scores":{"provisional":true,"baseline":true,"maturity_gate_passed":false,"score_opus":0.03725517342034805,"score_gpt":0.3282944025988447,"score_spread":0.2910392291784967,"validation_status":"score_only:v0-immature-baseline","note":"Baseline scores from an immature model (maturity gate not passed). Scores rank; they never assert a category."}}