{"id":"W2787854033","doi":"10.1139/cjp-2017-0727","title":"High-Frequency Characteristics of Al/ZnO/p-Si Schottky Barrier Diode","year":2018,"lang":"en","type":"article","venue":"Canadian Journal of Physics","topic":"Semiconductor materials and interfaces","field":"Physics and Astronomy","cited_by":2,"is_retracted":true,"has_abstract":true,"ca_institutions":"","funders":"Gazi Üniversitesi","keywords":"Physics; Schottky barrier; Optoelectronics; Diode; Schottky diode; Metal–semiconductor junction","routes":{"ca_aff":false,"ca_fund":false,"ca_venue":true,"about_ca":false,"invisible_to_affiliation_only":true},"retraction":{"nature":"Retraction","reason":"Euphemisms for Plagiarism;Plagiarism of/in Article;","date":"4/27/2018 0:00","openalex_flagged":true},"screen":null}