{"id":"W2796843092","doi":"10.1063/1.5011424","title":"Phosphorus oxide gate dielectric for black phosphorus field effect transistors","year":2018,"lang":"en","type":"article","venue":"Applied Physics Letters","topic":"2D Materials and Applications","field":"Materials Science","cited_by":25,"is_retracted":false,"has_abstract":true,"ca_institutions":"McMaster University; McGill University","funders":"Natural Sciences and Engineering Research Council of Canada; H2020 European Research Council; Scuola Normale Superiore","keywords":"Passivation; Materials science; Gate dielectric; Layer (electronics); Atomic layer deposition; Reactive-ion etching; Optoelectronics; Fabrication; Etching (microfabrication); Dielectric; Phosphorus; Field-effect transistor; Oxide; Photoluminescence; Analytical Chemistry (journal); Inorganic chemistry; Transistor; Nanotechnology; Chemistry; Metallurgy; Environmental chemistry; Electrical engineering","routes":{"ca_aff":true,"ca_fund":true,"ca_venue":false,"about_ca":false,"invisible_to_affiliation_only":false},"retraction":null,"screen":null,"direct_labels":[],"prediction":{"model_version":"metacan-v3-hybrid-931329e0061c","candidate_categories":[],"consensus_categories":[],"category_scores_codex":[0.0000486015,0.0002370582,0.0001499484,0.00008881849,0.0002310879,0.0004201391,0.0002928704,0.0002811931,0.002197932],"category_scores_gemma":[0.00009853141,0.00009159526,0.00009536616,0.0001083674,0.00009225849,0.0003619535,0.0001685009,0.0003168103,0.0007366739],"about_ca_system_candidate":false,"about_ca_system_consensus":false,"about_ca_system_score_codex":0.000188496,"about_ca_system_score_gemma":0.0001352881,"about_ca_topic_candidate":false,"about_ca_topic_consensus":false,"about_ca_topic_score_codex":0.000244804,"about_ca_topic_score_gemma":0.0005319212,"domain_scores_codex":[0.9999634,0.000002184506,0.000001693967,0.000008203643,0.00001846203,0.000006116107],"domain_scores_gemma":[0.9999657,0.000008463573,0.000007724706,0.000003557137,0.000007414883,0.000007157101],"domain_codex":null,"domain_gemma":null,"domain_candidate":null,"domain_consensus":null,"study_design_codex":"bench_or_experimental","study_design_gemma":"bench_or_experimental","study_design_scores_codex":[0.00005290738,0.00001611294,0.0001443518,0.0001396797,0.000007018724,0.0002369124,0.00001520653,0.0002654165,0.9897541,0.001340693,0.001063721,0.006963955],"study_design_scores_gemma":[0.00003281911,0.0002895944,0.001559181,0.0000223967,0.00002018846,0.0005661591,0.0000377563,0.004563672,0.9554175,0.001421073,0.03605679,0.00001305332],"study_design_candidate":"bench_or_experimental","study_design_consensus":"bench_or_experimental","genre_codex":"empirical","genre_gemma":"empirical","genre_scores_codex":[0.9391388,0.008537159,0.0239928,0.001117505,0.0005924539,0.00008614371,0.001653951,0.0006758948,0.02420531],"genre_scores_gemma":[0.9679301,0.004830888,0.01651641,0.0002375735,0.00009340183,0.00006650302,0.0008231116,0.00009154839,0.009410433],"genre_candidate":"empirical","genre_consensus":"empirical","teacher_disagreement_score":0.002197932,"threshold_uncertainty_score":0.007352769,"prediction_status":"machine_predicted_unvalidated"},"machine_scores":{"provisional":true,"baseline":true,"maturity_gate_passed":false,"score_opus":0.008473555468937476,"score_gpt":0.2295724328388496,"score_spread":0.2210988773699122,"validation_status":"score_only:v0-immature-baseline","note":"Baseline scores from an immature model (maturity gate not passed). Scores rank; they never assert a category."}}