Distortion in RF CMOS short-channel low-noise amplifiers
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Bibliographic record
Abstract
An approach to estimate the distortion in CMOS short-channel (e.g. 0.18-/spl mu/m gate length) RF low-noise amplifiers (LNAs), based on Volterra's series, is presented. Compact and accurate frequency-dependent closed-form expressions describing the effects of the different transistor parameters on harmonic distortion are derived. For the first time, the second-order distortion (HD2), in CMOS short-channel based LNAs, is studied. This is crucial for systems such as homodyne receivers. Equations describing third-order intermodulation distortion in RF LNAs are reported. The analytical analysis is verified through simulations and measured results of an 0.18-/spl mu/m CMOS 5.8-GHz folded-cascode LNA prototype chip geared toward sub-1-V operation. It is shown that the distortion is independent of the gate-source capacitance C/sub gs/ of the MOS transistors, allowing an extra degree of freedom in the design of LNA circuits. Distortion-aware design guidelines for RF CMOS LNAs are provided throughout the paper.
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Codex and Gemma teacher scores by category
| Category | Codex | Gemma |
|---|---|---|
| Metaresearch | 0.000 | 0.000 |
| Meta-epidemiology (narrow) | 0.000 | 0.000 |
| Meta-epidemiology (broad) | 0.000 | 0.000 |
| Bibliometrics | 0.000 | 0.000 |
| Science and technology studies | 0.000 | 0.000 |
| Scholarly communication | 0.000 | 0.000 |
| Open science | 0.000 | 0.000 |
| Research integrity | 0.000 | 0.000 |
| Insufficient payload (model declined to judge) | 0.000 | 0.000 |
Machine scores (provisional)
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