Performance and ruggedness of 1200V SiC — Trench — MOSFET
Why is this work in the frame?
A frame that forgets how it found something cannot be audited. These are the routes that admitted this work.
Full frame distilled prediction
Learned from the 10,348 direct Codex labels and 10,348 direct Gemma labels. Candidate is the union of thresholded teacher heads; consensus is their intersection. These outputs are machine_predicted_unvalidated and are not human labels or direct frontier model labels.
- Candidate categories
- none
- Consensus categories
- none
- Domain
- Candidate signal: noneConsensus signal: none
- Study design
- Candidate signal: Bench or experimentalConsensus signal: Bench or experimental
- Genre
- Candidate signal: EmpiricalConsensus signal: Empirical
- Teacher disagreement score
- 0.124
- Threshold uncertainty score
- 0.286
- Validation status
machine_predicted_unvalidated·codex-gemma-dda1882f352a
Codex and Gemma teacher scores by category
| Category | Codex | Gemma |
|---|---|---|
| Metaresearch | 0.000 | 0.000 |
| Meta-epidemiology (narrow) | 0.000 | 0.000 |
| Meta-epidemiology (broad) | 0.000 | 0.000 |
| Bibliometrics | 0.000 | 0.000 |
| Science and technology studies | 0.000 | 0.000 |
| Scholarly communication | 0.000 | 0.000 |
| Open science | 0.000 | 0.000 |
| Research integrity | 0.000 | 0.000 |
| Insufficient payload (model declined to judge) | 0.000 | 0.000 |
Machine scores (provisional)
Baseline scores from an immature model (maturity gate not passed, 7 training rounds). Scores rank; they never assert a category.
The two teacher heads of the student model, read on this work. A score orders the frame for review; it never asserts a category, and the validation status ships verbatim with every row.
- Teacher spread
- 0.204 · how far apart the two teachers sit on this one work
- Validation status
score_only:v0-immature-baseline· verbatim from the scoring run: score_only means the number may rank works, and no category label ships from it
Abstract
This paper describes a novel SiC trench MOSFET concept. The device is designed to balance low conduction losses with Si-IGBT like reliability. Basic features of the static and dynamic performance as well as short circuit capability of the 45mΩ/1200 V CoolSiC™ MOSFET are presented. The favorable temperature behavior of the on-state resistance combined with a low sensitivity of the switching energies to temperature simplify the design-in. Long-term gate oxide tests reveal a very low extrinsic failure rate well matching the requirements of industrial applications.
Fetched live from OpenAlex and de-inverted. Abstracts are not stored in this database: the inverted indexes are 8.6 GB of the frame’s 9.3 GB of text, and the host has 13 GB free.
The record
- Venue
- Topic
- Silicon Carbide Semiconductor Technologies
- Field
- Engineering
- Canadian institutions
- Infineon Technologies (Canada)
- Funders
- not available
- Keywords
- MOSFETMaterials scienceInsulated-gate bipolar transistorReliability (semiconductor)TrenchElectrical engineeringOptoelectronicsSilicon carbideElectronic engineeringVoltageEngineering physicsEngineeringTransistorNanotechnologyPower (physics)PhysicsComposite material
- Has abstract in OpenAlex
- yes