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Record W3081302630 · doi:10.1002/aisy.202000115

In‐Memory Vector‐Matrix Multiplication in Monolithic Complementary Metal–Oxide–Semiconductor‐Memristor Integrated Circuits: Design Choices, Challenges, and Perspectives

2020· article· en· W3081302630 on OpenAlex

Why this work is in the frame

A frame that forgets how it found something cannot be audited. These are the routes that admitted this work.

affAt least one author lists a Canadian institution in the pinned OpenAlex snapshot.
fundA Canadian funder is recorded on the work.

Bibliographic record

VenueAdvanced Intelligent Systems · 2020
Typearticle
Languageen
FieldEngineering
TopicAdvanced Memory and Neural Computing
Canadian institutionsInstitut interdisciplinaire d'innovation technologiqueUniversité de SherbrookeUniversity of Toronto
FundersEuropean Research CouncilNatural Sciences and Engineering Research Council of CanadaNational Tsing Hua UniversityCentre National de la Recherche ScientifiqueCanadian Network for Research and Innovation in Machining Technology, Natural Sciences and Engineering Research Council of Canada
KeywordsComputer scienceVon Neumann architectureBottleneckResistive random-access memoryMatrix multiplicationIn-Memory ProcessingComputer architectureCrossbar switchKey (lock)MemristorIntegrated circuitSupercomputerMassively parallelCMOSContext (archaeology)Memory bandwidthParallel computingEmbedded systemElectronic engineeringElectrical engineeringEngineeringTelecommunicationsSearch engine

Abstract

fetched live from OpenAlex

The low communication bandwidth between memory and processing units in conventional von Neumann machines does not support the requirements of emerging applications that rely extensively on large sets of data. More recent computing paradigms, such as high parallelization and near‐memory computing, help alleviate the data communication bottleneck to some extent, but paradigm‐shifting concepts are required. In‐memory computing has emerged as a prime candidate to eliminate this bottleneck by colocating memory and processing. In this context, resistive switching (RS) memory devices is a key promising choice, due to their unique intrinsic device‐level properties, enabling both storing and computing with a small, massively‐parallel footprint at low power. Theoretically, this directly translates to a major boost in energy efficiency and computational throughput, but various practical challenges remain. A qualitative and quantitative analysis of several key existing challenges in implementing high‐capacity, high‐volume RS memories for accelerating the most computationally demanding computation in machine learning (ML) inference, that of vector‐matrix multiplication (VMM), is presented. The monolithic integration of RS memories with complementary metal–oxide–semiconductor (CMOS) integrated circuits is presented as the core underlying technology. The key existing design choices in terms of device‐level physical implementation, circuit‐level design, and system‐level considerations is reviewed and an outlook for future directions is provided.

Fetched live from OpenAlex and de-inverted. Abstracts are not stored in this database: the inverted indexes are 8.6 GB of the frame’s 9.3 GB of text, and the host has 13 GB free.

Full frame distilled prediction

Teacher imitation

Not calibrated prevalence, not ground truth. Human validation pending. Learned from the 10,348 direct Codex labels and 10,348 direct Gemma labels. Candidate is the union of thresholded teacher heads; consensus is their intersection. These outputs are machine_predicted_unvalidated and are not human labels or direct frontier model labels.

metaresearch head score (Codex)0.000
metaresearch head score (Gemma)0.000
Version: codex-gemma-dda1882f352aValidation status: machine_predicted_unvalidated
Candidate categoriesMeta-epidemiology (narrow)
Consensus categoriesnone
DomainCandidate signal: none · Consensus signal: none
Study designCandidate signal: Simulation or modeling · Consensus signal: Simulation or modeling
GenreCandidate signal: Empirical · Consensus signal: Empirical
Teacher disagreement score0.256
Threshold uncertainty score1.000

Codex and Gemma teacher scores by category

CategoryCodexGemma
Metaresearch0.0000.000
Meta-epidemiology (narrow)0.0000.000
Meta-epidemiology (broad)0.0010.000
Bibliometrics0.0000.000
Science and technology studies0.0000.000
Scholarly communication0.0000.001
Open science0.0000.000
Research integrity0.0000.001
Insufficient payload (model declined to judge)0.0000.000

Machine scores (provisional)

The two teacher heads of the student model, read on this work. A score orders the frame for review; it never asserts a category, and the validation status ships verbatim with every row.

Baseline scores from an immature model (maturity gate not passed, 7 training rounds). Scores rank; they never assert a category.

Opus teacher head0.091
GPT teacher head0.285
Teacher spread0.194 · how far apart the two teachers sit on this one work
Validation statusscore_only:v0-immature-baseline · verbatim from the scoring run: score_only means the number may rank works, and no category label ships from it