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Record W3081302630 · doi:10.1002/aisy.202000115

In‐Memory Vector‐Matrix Multiplication in Monolithic Complementary Metal–Oxide–Semiconductor‐Memristor Integrated Circuits: Design Choices, Challenges, and Perspectives

2020· article· en· W3081302630 on OpenAlexafffund
Amirali Amirsoleimani, Fabien Alibart, Victor Yon, Jianxiong Xu, M. Reza Pazhouhandeh, Serge Ecoffey, Yann Beilliard, Roman Genov, Dominique Drouin

Bibliographic record

VenueAdvanced Intelligent Systems · 2020
Typearticle
Languageen
FieldEngineering
TopicAdvanced Memory and Neural Computing
Canadian institutionsInstitut interdisciplinaire d'innovation technologiqueUniversité de SherbrookeUniversity of Toronto
FundersEuropean Research CouncilNatural Sciences and Engineering Research Council of CanadaNational Tsing Hua UniversityCentre National de la Recherche ScientifiqueCanadian Network for Research and Innovation in Machining Technology, Natural Sciences and Engineering Research Council of Canada
KeywordsComputer scienceVon Neumann architectureBottleneckResistive random-access memoryMatrix multiplicationIn-Memory ProcessingComputer architectureCrossbar switchKey (lock)MemristorIntegrated circuitSupercomputerMassively parallelCMOSContext (archaeology)Memory bandwidthParallel computingEmbedded systemElectronic engineeringElectrical engineeringEngineeringTelecommunicationsSearch engine

Abstract

fetched live from OpenAlex

The low communication bandwidth between memory and processing units in conventional von Neumann machines does not support the requirements of emerging applications that rely extensively on large sets of data. More recent computing paradigms, such as high parallelization and near‐memory computing, help alleviate the data communication bottleneck to some extent, but paradigm‐shifting concepts are required. In‐memory computing has emerged as a prime candidate to eliminate this bottleneck by colocating memory and processing. In this context, resistive switching (RS) memory devices is a key promising choice, due to their unique intrinsic device‐level properties, enabling both storing and computing with a small, massively‐parallel footprint at low power. Theoretically, this directly translates to a major boost in energy efficiency and computational throughput, but various practical challenges remain. A qualitative and quantitative analysis of several key existing challenges in implementing high‐capacity, high‐volume RS memories for accelerating the most computationally demanding computation in machine learning (ML) inference, that of vector‐matrix multiplication (VMM), is presented. The monolithic integration of RS memories with complementary metal–oxide–semiconductor (CMOS) integrated circuits is presented as the core underlying technology. The key existing design choices in terms of device‐level physical implementation, circuit‐level design, and system‐level considerations is reviewed and an outlook for future directions is provided.

Fetched live from OpenAlex and de-inverted. Abstracts are not stored in this database: the inverted indexes are 8.6 GB of the frame’s 9.3 GB of text, and the host has 13 GB free.

How this classification was reachedexpand

Full frame machine prediction

Teacher imitation

Not calibrated prevalence, not ground truth. Human validation pending. The Gemma side is a direct model label for every work in the frame, read from the title-only record. The Codex side is a classifier learned from the 10,348 direct Codex labels and calibrated to design-weighted sample rates; fields without enough sample support carry no Codex call. Candidate is the union of the two sides; consensus is their intersection. These outputs are machine_predicted_unvalidated and are not human labels.

metaresearch head score (Codex)0.000
metaresearch head score (Gemma)0.000
Version: metacan-v3-hybrid-931329e0061cValidation status: machine_predicted_unvalidated
Candidate categoriesnone
Consensus categoriesnone
DomainCandidate signal: none · Consensus signal: none
Study designCandidate signal: Theoretical or conceptual · Consensus signal: Theoretical or conceptual
GenreCandidate signal: Empirical · Consensus signal: none
Teacher disagreement score0.002
Threshold uncertainty score0.006

Distilled classifier scores by category (both heads)

CategoryCodexGemma
Metaresearch0.0000.000
Meta-epidemiology (narrow)0.0000.000
Meta-epidemiology (broad)0.0000.000
Bibliometrics0.0000.000
Science and technology studies0.0000.000
Scholarly communication0.0010.001
Open science0.0010.000
Research integrity0.0010.001
Insufficient payload (model declined to judge)0.0020.001

Machine scores (provisional)

The two teacher heads of the student model, read on this work. A score orders the frame for review; it never asserts a category, and the validation status ships verbatim with every row.

Baseline scores from an immature model (maturity gate not passed, 7 training rounds). Scores rank; they never assert a category.

Opus teacher head0.091
GPT teacher head0.285
Teacher spread0.194 · how far apart the two teachers sit on this one work
Validation statusscore_only:v0-immature-baseline · verbatim from the scoring run: score_only means the number may rank works, and no category label ships from it

Classification

machine, unvalidated

Machine predicted; a candidate call from one source (direct Gemma or distilled Codex), not a consensus.

The models applied no category: nothing in the taxonomy fit this work.
Study designTheoretical or conceptual
Domainnot available
GenreEmpirical

How this classification was reached, model by model and score by score, is at the end of the page under "How this classification was reached".

Quick stats

Citations211
Published2020
Admission routes2
Has abstractyes

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