Electroplate Bumping without Photoresist and Si Dice Stacking with TSV for 3D Packaging
Bibliographic record
Abstract
ABSTRACT A novel process of direct solder bumping on a Si wafer without PR (Photoresist), namely non-PR bumping, and stacking of TSV (Through Silicon Via) embedded Si dice were investigated to achieve cost reduction and higher productivity in three dimensional electronics packaging. The stacking of bumped Si dice, produced by non-PR method, was studied as well. Vias were produced by the DRIE (Deep Reactive Ion Etching) on the Si wafer with 40μm in diameter. SiO 2 , Ti and Au layers were formed on the via wall and pulsed wave electroplating was applied to plug the via with Cu. Then the Si wafer was grinded by CMP (Chemical Mechanical Polishing) to the thickness of 70μm until the both sides of Cu plugged vias were exposed. DC (Direct Current) electroplating was performed to fabricate Sn and near eutectic Sn-Ag bumps on the Cu plugged vias in the Si die. The reduction current was supplied through the Cu plugging to its top surface for solder bumping. To optimize the plating process, the current density and plating time were varied up to 40mA/cm 2 and 60 min, respectively. Bumped Si dice were stacked and assembled by reflow soldering in air at 255°C. The solder bumps were fabricated successfully without PR on the Cu plugged vias. The periphery of the bump was not so round as that with PR. However, it had an almost round periphery, and the surface of the bump showed a facet growth in Sn bumps while Sn-Ag bumps presented composite morphologies of hemispheric shape with Ag dendrites on their surface. The weight percent of Ag in Sn-Ag bumps were close to eutectic Sn-Ag composition. Three layers of Si dice with Sn bumps were stacked and assembled without any failure. In the bonding interface between Cu plug and solder bump, Cu 6 Sn 5 IMC was observed by FESEM (Field Emission Scanning Electron Microscope) and EDS (Energy Dispersive Spectroscope) analysis. From these results, three dimensional stacking of TSV embedded Si dice and non-PR electroplating of micro bumps on vias were achieved successfully.
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How this classification was reachedexpand
Full frame machine prediction
Teacher imitationNot calibrated prevalence, not ground truth. Human validation pending. The Gemma side is a direct model label for every work in the frame, read from the title-only record. The Codex side is a classifier learned from the 10,348 direct Codex labels and calibrated to design-weighted sample rates; fields without enough sample support carry no Codex call. Candidate is the union of the two sides; consensus is their intersection. These outputs are machine_predicted_unvalidated and are not human labels.
Distilled classifier scores by category (both heads)
| Category | Codex | Gemma |
|---|---|---|
| Metaresearch | 0.000 | 0.000 |
| Meta-epidemiology (narrow) | 0.000 | 0.000 |
| Meta-epidemiology (broad) | 0.000 | 0.000 |
| Bibliometrics | 0.000 | 0.000 |
| Science and technology studies | 0.000 | 0.000 |
| Scholarly communication | 0.000 | 0.000 |
| Open science | 0.000 | 0.000 |
| Research integrity | 0.000 | 0.000 |
| Insufficient payload (model declined to judge) | 0.001 | 0.000 |
Machine scores (provisional)
The two teacher heads of the student model, read on this work. A score orders the frame for review; it never asserts a category, and the validation status ships verbatim with every row.
Baseline scores from an immature model (maturity gate not passed, 7 training rounds). Scores rank; they never assert a category.
score_only:v0-immature-baseline · verbatim from the scoring run: score_only means the number may rank works, and no category label ships from itClassification
machine, unvalidatedMachine predicted; a candidate call from one source (direct Gemma or distilled Codex), not a consensus.
How this classification was reached, model by model and score by score, is at the end of the page under "How this classification was reached".