Effect of Hydrogen on Reliability with Various Deposition Temperatures of Al<sub>2</sub>O<sub>3</sub> Gate Insulator in In-Ga-Zn-O Thin Film Transistors
Notice bibliographique
Résumé
To achieve the next generation displays, it is becoming increasingly important to develop backplane technology with superior characteristics such as high mobility, high stability, and high transparency. Among the several candidates for suitable backplane in high definition display, amorphous In-Ga-Zn-O (a-IGZO) oxide semiconductor TFTs have attracted much interest due to its high mobility, optical transparency, and large area uniformity. However, due to the intrinsic problem of a-IGZO TFTs caused by oxygen vacancy and hydrogen, it is hard to control of threshold voltage (V th ) and stability under various stress conditions. One of them, hydrogen is the main factor closely related to reliability. According to previous studies, hydrogen acts as positive roles by defect passivation and also play negative roles in creating new defects in a-IGZO active layer. However, incorporation and diffusion of hydrogen into the active layer is an unavoidable issue during the TFTs fabrication, and it is important to control it so that hydrogen plays a positive role. So, in this study, we conducted experiments to verify the effect of hydrogen on the reliability by modifying the Al 2 O 3 gate insulator layer (GI) deposition process using atomic layer deposition (ALD) method. In order to verify the relationship between the hydrogen and electrical properties of a-IGZO TFTs, we fabricated top gate bottom contact (TGBC) structures and applied different GI deposition temperature (T dep ) for controlling the amount of hydrogen. [1] Al 2 O 3 GI deposited using trimethylaluminum (TMA) and H 2 O precursor. Each T dep are 200, 250, 270 and 300 degree, respectively. As a result of Al 2 O 3 single thin film analysis using secondary ion mass spectroscopy (SIMS) method, it was confirmed that the Al 2 O 3 thin film deposited at high T dep has a relatively small amount of hydrogen than the Al 2 O 3 thin film deposited at low T dep . And then, TFT devices a, b, c, and d were fabricated using Al 2 O 3 GI with different T dep of 200, 250, 270 and 300 degrees, respectively. As a result, there was no significant difference between the devices. All devices had subthreshold swing (SS), value of 0.178 ~ 0.225 V, turn on voltage (V on ) of -0.16 ~ -0.44V, hysteresis of 0.13 ~ 0.27 V and field effect mobility (μ FE ) of 9.6 ~ 10.55 cm 2 /Vs. This trend was similar to positive bias temperature stress (PBTS) and negative bias temperature stress (NBTS) reliability. However, the reliability of negative bias illumination stress (NBIS) was significantly different for each device. Under the NBIS condition, the V th shift of each TFT was -4.36 V for a TFT, -4.36 V for b TFT, -3.72V for c TFT, -2.48 V for d TFT. These results indicate that the NBIS characteristic is improved as the T dep of Al 2 O 3 GI increases and proves that reliability varies with the amount of hydrogen. This suggests that as hydrogen increases, more hydrogen-induced defects are formed at the interface between GI and a-IGZO active layer, which causes trapping of positive charges. This phenomenon can be explained by non-bridging oxygen hole center (NBOHC) method, which is one of the positive charge trapping models, and the mechanism for the role of hydrogen in the a-IGZO TFTs can be identified. [2] Base on these experimental results, we will propose the way to optimize condition of GI deposition process for high stability and high performance in a-IGZO TFTs. [1] S.J. Yun, K.-H. Lee, J. Skarp, H.-R. Kim and K.-S. Nam, J. Vac. Sci. Technol. A, 15(6) (1997) [2] M. Tsubuku, R. Watanabe, N. Ishihara, H. Kishida, M. Takahashi, S. Yamazaki, Y. Kanzaki, H. Matsukizono, S. Mori, T. Matsue, SID 2013 DIGEST. 169 (2013)
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Imitation des enseignantsNi prévalence calibrée, ni vérité terrain. Validation humaine à venir. Apprise à partir de 10 348 étiquettes directes de Codex et de 10 348 étiquettes directes de Gemma. Le mode candidate est l'union des têtes enseignantes seuillées; le consensus est leur intersection. Ces sorties portent le statut machine_predicted_unvalidated et ne sont ni des étiquettes humaines ni des étiquettes directes de modèles de pointe.
Scores Codex et Gemma par catégorie
| Catégorie | Codex | Gemma |
|---|---|---|
| Métarecherche | 0,001 | 0,000 |
| Méta-épidémiologie (sens strict) | 0,000 | 0,000 |
| Méta-épidémiologie (sens large) | 0,001 | 0,000 |
| Bibliométrie | 0,000 | 0,001 |
| Études des sciences et des technologies | 0,000 | 0,000 |
| Communication savante | 0,000 | 0,000 |
| Science ouverte | 0,000 | 0,000 |
| Intégrité de la recherche | 0,000 | 0,001 |
| Charge utile insuffisante (le modèle a refusé de juger) | 0,000 | 0,000 |
Scores machine (provisoires)
Les deux têtes enseignantes du modèle étudiant, lues sur ce travail. Un score ordonne la base pour la relecture; il n'affirme jamais une catégorie, et le statut de validation accompagne chaque rangée tel quel.
Scores de référence d'un modèle non mature (critères de maturité non atteints, 7 itérations). Un score ordonne; il n'affirme jamais une catégorie.
score_only:v0-immature-baseline · tel quel depuis la passe de notation : score_only signifie que le nombre peut ordonner les travaux, et qu'aucune étiquette de catégorie n'en découleClassification
machine, non validéePrédiction automatique; un appel candidat d’une seule tête enseignante, pas un consensus.
Le détail, modèle par modèle et score par score, se trouve en fin de page sous « Comment cette classification a été obtenue ».