MétaCan
Menu
Back to cohort
Record W1616789751 · doi:10.1143/jjap.46.2296

Gate Length Reduction Technology for Pseudomorphic In<sub>0.52</sub>Al<sub>0.48</sub>As/In<sub>0.7</sub>Ga<sub>0.3</sub>As High Electron Mobility Transistors

2007· article· en· W1616789751 on OpenAlexfundno aff
Seong-Jin Yeon, Jongwon Lee, Gyungseon Seol, Kwang-Seok Seo

Bibliographic record

VenueJapanese Journal of Applied Physics · 2007
Typearticle
Languageen
FieldEngineering
TopicSemiconductor materials and devices
Canadian institutionsnot available
FundersManitoba Medical Service Foundation
KeywordsTransconductanceHigh-electron-mobility transistorMaterials scienceOptoelectronicsTransistorCutoff frequencyEtching (microfabrication)Electron-beam lithographyResistNanotechnologyElectrical engineeringVoltageLayer (electronics)

Abstract

fetched live from OpenAlex

Gate length reduction technology was developed for pseudomorphic high-electron-mobility transistors (P-HEMTs) applicable to nano-HEMTs. This technology utilizes various reactions between plasmas and dielectrics. Using optimum conditions for reducing gate length through pattern transfer in dielectric etching, we fabricated HEMTs having a sub-30 nm gate length reduced from the initial gate length of 0.13 µm. A HEMT with this technology has merits of both fine length definition beyond the limit of an electron beam (e-beam) lithography system and overcoming the metal filling problem caused by a high aspect ratio. The fabricated devices have high DC and RF performance characteristics, a transconductance of 1.35 S/mm, a maximum saturated current of 800 mA/mm and a cutoff frequency fT of 450 GHz.

Fetched live from OpenAlex and de-inverted. Abstracts are not stored in this database: the inverted indexes are 8.6 GB of the frame’s 9.3 GB of text, and the host has 13 GB free.

How this classification was reachedexpand

Full frame distilled prediction

Teacher imitation

Not calibrated prevalence, not ground truth. Human validation pending. Learned from the 10,348 direct Codex labels and 10,348 direct Gemma labels. Candidate is the union of thresholded teacher heads; consensus is their intersection. These outputs are machine_predicted_unvalidated and are not human labels or direct frontier model labels.

metaresearch head score (Codex)0.002
metaresearch head score (Gemma)0.000
Version: codex-gemma-dda1882f352aValidation status: machine_predicted_unvalidated
Candidate categoriesMeta-epidemiology (narrow)
Consensus categoriesnone
DomainCandidate signal: none · Consensus signal: none
Study designCandidate signal: Bench or experimental · Consensus signal: Bench or experimental
GenreCandidate signal: Empirical · Consensus signal: Empirical
Teacher disagreement score0.020
Threshold uncertainty score0.999

Codex and Gemma teacher scores by category

CategoryCodexGemma
Metaresearch0.0020.000
Meta-epidemiology (narrow)0.0010.001
Meta-epidemiology (broad)0.0020.000
Bibliometrics0.0010.002
Science and technology studies0.0000.000
Scholarly communication0.0000.001
Open science0.0010.000
Research integrity0.0010.002
Insufficient payload (model declined to judge)0.0000.000

Machine scores (provisional)

The two teacher heads of the student model, read on this work. A score orders the frame for review; it never asserts a category, and the validation status ships verbatim with every row.

Baseline scores from an immature model (maturity gate not passed, 7 training rounds). Scores rank; they never assert a category.

Opus teacher head0.007
GPT teacher head0.217
Teacher spread0.210 · how far apart the two teachers sit on this one work
Validation statusscore_only:v0-immature-baseline · verbatim from the scoring run: score_only means the number may rank works, and no category label ships from it

Classification

machine, unvalidated

Machine predicted; a candidate call from one teacher head, not a consensus.

Study designBench or experimental
Domainnot available
GenreEmpirical

How this classification was reached, model by model and score by score, is at the end of the page under "How this classification was reached".

Quick stats

Citations2
Published2007
Admission routes1
Has abstractyes

Explore more

Same venueJapanese Journal of Applied PhysicsSame topicSemiconductor materials and devicesFrench-language works237,207