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Record W1994045093 · doi:10.1116/1.3590932

Growth mechanism of InGaN by plasma assisted molecular beam epitaxy

2011· article· en· W1994045093 on OpenAlexaff
Henryk Turski, M. Siekacz, Marta Sawicka, G. Cywiński, M. Kryśko, Szymon Grzanka, Julita Smalc‐Koziorowska, I. Grzegory, S. Porowski, Z. R. Wasilewski, C. Skierbiszewski

Bibliographic record

VenueJournal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 2011
Typearticle
Languageen
FieldPhysics and Astronomy
TopicGaN-based semiconductor devices and materials
Canadian institutionsInstitute for Microstructural Sciences
Fundersnot available
KeywordsIndiumMolecular beam epitaxyGalliumMaterials scienceSubstrate (aquarium)EpitaxyPlasmaOptoelectronicsGallium nitrideNanotechnologyMetallurgyPhysicsGeology

Abstract

fetched live from OpenAlex

In this article, the authors discuss the mechanism of InGaN growth by plasma assisted molecular beam epitaxy. They present the evidence of the influence of substrate miscut on indium incorporation for the growths with different gallium fluxes. They propose and discuss the phenomenological model which describes the incorporation of indium into InGaN layers grown under the indium-rich conditions that takes into account following parameters: gallium and nitrogen fluxes, miscut angle, and the growth temperature.

Fetched live from OpenAlex and de-inverted. Abstracts are not stored in this database: the inverted indexes are 8.6 GB of the frame’s 9.3 GB of text, and the host has 13 GB free.

How this classification was reachedexpand

Full frame machine prediction

Teacher imitation

Not calibrated prevalence, not ground truth. Human validation pending. The Gemma side is a direct model label for every work in the frame, read from the title-only record. The Codex side is a classifier learned from the 10,348 direct Codex labels and calibrated to design-weighted sample rates; fields without enough sample support carry no Codex call. Candidate is the union of the two sides; consensus is their intersection. These outputs are machine_predicted_unvalidated and are not human labels.

metaresearch head score (Codex)0.000
metaresearch head score (Gemma)0.000
Version: metacan-v3-hybrid-931329e0061cValidation status: machine_predicted_unvalidated
Candidate categoriesnone
Consensus categoriesnone
DomainCandidate signal: none · Consensus signal: none
Study designCandidate signal: Bench or experimental · Consensus signal: Bench or experimental
GenreCandidate signal: Empirical · Consensus signal: Empirical
Teacher disagreement score0.001
Threshold uncertainty score0.004

Distilled classifier scores by category (both heads)

CategoryCodexGemma
Metaresearch0.0000.000
Meta-epidemiology (narrow)0.0000.000
Meta-epidemiology (broad)0.0000.000
Bibliometrics0.0000.000
Science and technology studies0.0010.000
Scholarly communication0.0000.000
Open science0.0010.000
Research integrity0.0000.000
Insufficient payload (model declined to judge)0.0010.000

Machine scores (provisional)

The two teacher heads of the student model, read on this work. A score orders the frame for review; it never asserts a category, and the validation status ships verbatim with every row.

Baseline scores from an immature model (maturity gate not passed, 7 training rounds). Scores rank; they never assert a category.

Opus teacher head0.014
GPT teacher head0.213
Teacher spread0.199 · how far apart the two teachers sit on this one work
Validation statusscore_only:v0-immature-baseline · verbatim from the scoring run: score_only means the number may rank works, and no category label ships from it

Classification

machine, unvalidated

Machine predicted; a candidate call from one source (direct Gemma or distilled Codex), not a consensus.

The models applied no category: nothing in the taxonomy fit this work.
Study designBench or experimental
Domainnot available
GenreEmpirical

How this classification was reached, model by model and score by score, is at the end of the page under "How this classification was reached".

Quick stats

Citations25
Published2011
Admission routes1
Has abstractyes

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Same venueJournal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and PhenomenaSame topicGaN-based semiconductor devices and materialsFrench-language works237,207