A Compact Diode Model for the Simulation of Fast Power Diodes including the Effects of Avalanche and Carrier Lifetime Zoning
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Bibliographic record
Abstract
This paper presents the development and implementation of a compact diode model which can simulate aspects of high-voltage diodes such as snappy recovery during punch-through and the modified carrier density profile due to local lifetime control. It can be used in both circuit simulators and the formal optimisation of devices and circuits. A Fourier-based solution is used to solve the ambipolar diffusion equation (ADE) and describe the carrier dynamics. The model is shown to capture the required aspects of high-voltage diode recovery successfully, including the use of local lifetime control to eliminate snappy recovery
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| Category | Codex | Gemma |
|---|---|---|
| Metaresearch | 0.000 | 0.000 |
| Meta-epidemiology (narrow) | 0.000 | 0.000 |
| Meta-epidemiology (broad) | 0.000 | 0.000 |
| Bibliometrics | 0.000 | 0.000 |
| Science and technology studies | 0.000 | 0.000 |
| Scholarly communication | 0.000 | 0.000 |
| Open science | 0.000 | 0.000 |
| Research integrity | 0.000 | 0.000 |
| Insufficient payload (model declined to judge) | 0.000 | 0.000 |
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