MétaCan
Menu
Back to cohort
Record W2122815464 · doi:10.1080/00207210110035332

The operational speed and power dissipation of scaled one-transistor RTD/HFET memories

2001· article· en· W2122815464 on OpenAlexfundno aff
Konstantin Nikolić, M Forshaw

Bibliographic record

VenueInternational Journal of Electronics · 2001
Typearticle
Languageen
FieldEngineering
TopicSemiconductor materials and devices
Canadian institutionsnot available
FundersMcGill University
KeywordsTransistorCMOSDissipationQuantum tunnellingStatic random-access memoryMemory cellMaterials scienceMOSFETDiodeElectronic engineeringElectrical engineeringOptoelectronicsScalingPower (physics)EngineeringVoltagePhysicsMathematics

Abstract

fetched live from OpenAlex

The scaling behaviour of a memory that uses resonant tunnelling diodes (RTDs), namely the one-transistor tunnelling SRAM (TSRAM), is compared with the dominant memory technology, silicon CMOS. The minimum feature size (MOSFET or HFET gate length λ) is scaled in the range from 500 nm to 50 nm. Appropriate scaling laws are used for the RTD and wiring elements. We set up a benchmark architecture that we have modelled in RTD/HFET and in silicon CMOS, and simulated with HSPICE, in order to determine the limits on operational frequency. The RTD-based memories show speeds about an order of magnitude higher than the equivalent CMOS memory, even for very large memories. The performance improves with smaller values of λ and smaller memory sizes. However, for larger memories, the power dissipation outside TSRAM memory cells is still very high for enhancement/depletion (E/D) HFET circuitry.

Fetched live from OpenAlex and de-inverted. Abstracts are not stored in this database: the inverted indexes are 8.6 GB of the frame’s 9.3 GB of text, and the host has 13 GB free.

How this classification was reachedexpand

Full frame distilled prediction

Teacher imitation

Not calibrated prevalence, not ground truth. Human validation pending. Learned from the 10,348 direct Codex labels and 10,348 direct Gemma labels. Candidate is the union of thresholded teacher heads; consensus is their intersection. These outputs are machine_predicted_unvalidated and are not human labels or direct frontier model labels.

metaresearch head score (Codex)0.000
metaresearch head score (Gemma)0.000
Version: codex-gemma-dda1882f352aValidation status: machine_predicted_unvalidated
Candidate categoriesnone
Consensus categoriesnone
DomainCandidate signal: none · Consensus signal: none
Study designCandidate signal: Bench or experimental · Consensus signal: Bench or experimental
GenreCandidate signal: Empirical · Consensus signal: Empirical
Teacher disagreement score0.284
Threshold uncertainty score0.207

Codex and Gemma teacher scores by category

CategoryCodexGemma
Metaresearch0.0000.000
Meta-epidemiology (narrow)0.0000.000
Meta-epidemiology (broad)0.0000.000
Bibliometrics0.0000.000
Science and technology studies0.0000.000
Scholarly communication0.0000.000
Open science0.0000.000
Research integrity0.0000.000
Insufficient payload (model declined to judge)0.0000.000

Machine scores (provisional)

The two teacher heads of the student model, read on this work. A score orders the frame for review; it never asserts a category, and the validation status ships verbatim with every row.

Baseline scores from an immature model (maturity gate not passed, 7 training rounds). Scores rank; they never assert a category.

Opus teacher head0.008
GPT teacher head0.236
Teacher spread0.228 · how far apart the two teachers sit on this one work
Validation statusscore_only:v0-immature-baseline · verbatim from the scoring run: score_only means the number may rank works, and no category label ships from it

Classification

machine, unvalidated

Machine predicted; a candidate call from one teacher head, not a consensus.

The models applied no category: nothing in the taxonomy fit this work.
Study designBench or experimental
Domainnot available
GenreEmpirical

How this classification was reached, model by model and score by score, is at the end of the page under "How this classification was reached".

Quick stats

Citations5
Published2001
Admission routes1
Has abstractyes

Explore more

Same venueInternational Journal of ElectronicsSame topicSemiconductor materials and devicesFrench-language works237,207