Effect of annealing on carrier concentration in Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> films
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Bibliographic record
Abstract
Carrier concentration of phase change materials is a critical parameter that determines electrical resistivity in amorphous and crystalline states. To obtain insights into carrier concentration of amorphous and face centered cubic (fcc) crystalline Ge 2 Sb 2 Te 5 , the Seebeck coefficients of as-deposited and thermal annealed Ge 2 Sb 2 Te 5 films were evaluated from thermopower measurements. All the samples show p-type conduction. The Seebeck coefficients of amorphous and fcc crystalline phase were +0.89 and +0.028 mV/K, which correspond to carrier concentrations of ∼10 16 and ∼10 20 cm −3 , respectively. Carrier mobility was also estimated to be in the range 0.02–0.6 cm 2 /Vs in both amorphous and fcc crystalline phases. High contrast in electrical resistivity between amorphous and fcc crystalline Ge 2 Sb 2 Te 5 is originated from the difference of carrier concentration.
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| Category | Codex | Gemma |
|---|---|---|
| Metaresearch | 0.001 | 0.000 |
| Meta-epidemiology (narrow) | 0.000 | 0.000 |
| Meta-epidemiology (broad) | 0.001 | 0.000 |
| Bibliometrics | 0.000 | 0.000 |
| Science and technology studies | 0.000 | 0.000 |
| Scholarly communication | 0.000 | 0.000 |
| Open science | 0.000 | 0.000 |
| Research integrity | 0.000 | 0.000 |
| Insufficient payload (model declined to judge) | 0.000 | 0.000 |
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