MétaCan
Menu
Back to cohort
Record W2288136104 · doi:10.1149/ma2015-02/31/1138

(Invited) High Performance Deep Ultraviolet Nanowire Light Emitting Diodes and Lasers

2015· article· en· W2288136104 on OpenAlexaff
Zetian Mi, Songrui Zhao, Xianhe Liu

Bibliographic record

VenueECS Meeting Abstracts · 2015
Typearticle
Languageen
FieldPhysics and Astronomy
TopicGaN-based semiconductor devices and materials
Canadian institutionsMcGill University
Fundersnot available
KeywordsMaterials scienceNanowireOptoelectronicsHeterojunctionMolecular beam epitaxyLight-emitting diodeDiodeUltravioletSubstrate (aquarium)LaserDopantEpitaxyDopingNanotechnologyOpticsLayer (electronics)

Abstract

fetched live from OpenAlex

Deep ultraviolet light sources are important for a broad range of applications including water purification, disinfection, and medical diagnostics. The currently reported AlGaN planar light emitting diodes (LEDs) and lasers generally exhibit poor performance, due to the presence of large densities of defects and dislocations and the inefficient p-type doping. In this context, we have investigated the molecular beam epitaxial growth and characterization of nearly defect-free AlGaN nanowire heterostructures grown directly on Si substrate. We have demonstrated AlGaN nanowire LEDs that can operate in the UV-B (280-320nm) and UV-C (<280 nm) bands, which exhibit excellent current current-voltage characteristics. We have further demonstrated electrically injected AlGaN nanowire lasers on Si that can exhibit relatively low threshold current densities (~ 100 A/cm 2 ). In this work, catalyst-free AlGaN nanowires were grown directly on Si substrate by radio-frequency plasma-assisted molecular beam epitaxy. Due to the diffusion controlled growth process, such self-organized AlGaN nanowires exhibit unique core-shell structures, with the presence of Al-rich AlGaN shell. As a consequence, the nonradiative surface recombination can be greatly suppressed. By varying the Al/Ga flux ratio during the growth process, the emission wavelengths can be controllably varied from ~ 210 nm to >340 nm. The nanowire heterostructures exhibit relatively high internal quantum efficiency (~ 80%) at room-temperature in the UV-C band. We have further identified that Mg-dopant incorporation can be significantly enhanced in AlGaN nanowires, compared to their planar counterparts, due to the reduced formation energy for Al(Ga)-substitutional Mg-doping. The resulting AlN nanowire LEDs can exhibit excellent current-voltage characteristics, with a turn-on voltage of 6 V. We have also demonstrated that self-organized AlGaN nanowire arrays can function as a high Q optical cavity, due to the Anderson localization of light. The AlGaN nanowire lasers consist of n-AlGaN cladding layer, i-AlGaN active region, and p-AlGaN cladding layer. The devices were fabricated using standard photolithography and metallization techniques. Under continuous wave biasing conditions, the devices can exhibit very low threshold current density. For devices operating in the UV-AII (~ 320-340 nm) band, the threshold current density is ~ 12 A/cm2 at 6 K. The threshold current density increases slightly to ~ 200 A/cm2 for operation wavelengths in the UV-C band. The measured threshold current densities are nearly two to three orders of magnitude lower, compared to conventional AlGaN quantum well lasers under either optical pumping or electrical injection.

Fetched live from OpenAlex and de-inverted. Abstracts are not stored in this database: the inverted indexes are 8.6 GB of the frame’s 9.3 GB of text, and the host has 13 GB free.

How this classification was reachedexpand

Full frame distilled prediction

Teacher imitation

Not calibrated prevalence, not ground truth. Human validation pending. Learned from the 10,348 direct Codex labels and 10,348 direct Gemma labels. Candidate is the union of thresholded teacher heads; consensus is their intersection. These outputs are machine_predicted_unvalidated and are not human labels or direct frontier model labels.

metaresearch head score (Codex)0.000
metaresearch head score (Gemma)0.000
Version: codex-gemma-dda1882f352aValidation status: machine_predicted_unvalidated
Candidate categoriesnone
Consensus categoriesnone
DomainCandidate signal: none · Consensus signal: none
Study designCandidate signal: Bench or experimental · Consensus signal: Bench or experimental
GenreCandidate signal: Empirical · Consensus signal: Empirical
Teacher disagreement score0.176
Threshold uncertainty score0.825

Codex and Gemma teacher scores by category

CategoryCodexGemma
Metaresearch0.0000.000
Meta-epidemiology (narrow)0.0000.000
Meta-epidemiology (broad)0.0000.000
Bibliometrics0.0000.000
Science and technology studies0.0000.000
Scholarly communication0.0000.000
Open science0.0000.000
Research integrity0.0000.000
Insufficient payload (model declined to judge)0.0000.000

Machine scores (provisional)

The two teacher heads of the student model, read on this work. A score orders the frame for review; it never asserts a category, and the validation status ships verbatim with every row.

Baseline scores from an immature model (maturity gate not passed, 7 training rounds). Scores rank; they never assert a category.

Opus teacher head0.013
GPT teacher head0.224
Teacher spread0.211 · how far apart the two teachers sit on this one work
Validation statusscore_only:v0-immature-baseline · verbatim from the scoring run: score_only means the number may rank works, and no category label ships from it

Classification

machine, unvalidated

Machine predicted; a candidate call from one teacher head, not a consensus.

The models applied no category: nothing in the taxonomy fit this work.
Study designBench or experimental
Domainnot available
GenreEmpirical

How this classification was reached, model by model and score by score, is at the end of the page under "How this classification was reached".

Quick stats

Citations0
Published2015
Admission routes1
Has abstractyes

Explore more

Same venueECS Meeting AbstractsSame topicGaN-based semiconductor devices and materialsFrench-language works237,207