MétaCan
Menu
Back to cohort
Record W2328651931 · doi:10.14288/1.0096234

GaAs material investigation for integrated circuits fabrication

2010· article· en· W2328651931 on OpenAlexaff
Salam Dindo

Bibliographic record

VenuecIRcle (University of British Columbia) · 2010
Typearticle
Languageen
FieldEngineering
TopicSemiconductor materials and devices
Canadian institutionsUniversity of British Columbia
Fundersnot available
KeywordsFabricationIntegrated circuitElectronic circuitMaterials scienceComputer scienceElectrical engineeringOptoelectronicsEngineeringMedicine

Abstract

fetched live from OpenAlex

The primary objective of the work described in this thesis was to study the influence of undoped LEC GaAs substrate material from various suppliers on the performance of ion implanted and annealed active layers. Optical transient current spectroscopy (OTCS) was investigated as a qualification test for GaAs substrates. Deep level spectra of the substrates before ion implantation were obtained. It was found that while the OTCS spectra of high pressure grown GaAs from two suppliers were similar, that of the low pressure material showed different relative concentration of traps. The use of OTCS was further extended to study trap concentration as a function of surface treatment. It was found that the use of chemical etchants reduces the concentration of some levels, possibly those located on the surface as opposed to bulk traps. Surface damage was found to enhance the negative peak in the OTCS spectrum. The deep levels spectra were found to be affected by the geometry of the device and the type of electrode material. Channel current deep level transient spectroscopy (DLTS) was used to study both process- and substrate-induced deep levels in ion implanted MESFET channels. The spectra of process-induced traps were found to be different according to the encapsulant used. Silicon dioxide (both RF sputtered and plasma enhanced chemically vapor deposited (PECVD)) was found to induce a variety of process related defects. This is believed to be because silicon dioxide is permeable to gallium and hence does not preserve the stoichiometry of ion implanted GaAs during high temperature anneals. Deep level spectra of MESFETs annealed using silicon nitride, on the other hand, were found to contain single traps related to the defects in the starting material. For implants through silicon nitride, a high concentration of the main electron trap EL2 was found, whereas implants directly into the surface resulted in the level EL12. Comparison of the characteristics of the variety of LEC undoped GaAs material show that they differed widely and had inhomogeneous properties. For example, compared to the high pressure grown GaAs, the Litton’s low pressure substrate had lower activation, mobility, drain current and threshold voltage, good confinement of the scatter in the same characteristics, low concentration of deep levels, and the least backgating effect which makes it promising for IC fabrication. Comparison of the high pressure grown material from two suppliers showed that Cominco's recent material had good mobility, activation, relatively high scatter of threshold voltage, high concentration of deep levels, and was affected by backgating. In comparison, Sumitomo's material showed thermal instability, less scatter of threshold voltage, less mobility and deep level concentrations, and similar backgating characteristics. Substrate grown three years earlier showed higher diffusion of dopant, different deep levels, and better backgating characteristics. Finally, a substrate which had failed the qualification test by a device manufacturer showed minimal diffusion tails and threshold voltage scatter, the highest concentration of deep levels, and substantial backgating.

Fetched live from OpenAlex and de-inverted. Abstracts are not stored in this database: the inverted indexes are 8.6 GB of the frame’s 9.3 GB of text, and the host has 13 GB free.

How this classification was reachedexpand

Full frame distilled prediction

Teacher imitation

Not calibrated prevalence, not ground truth. Human validation pending. Learned from the 10,348 direct Codex labels and 10,348 direct Gemma labels. Candidate is the union of thresholded teacher heads; consensus is their intersection. These outputs are machine_predicted_unvalidated and are not human labels or direct frontier model labels.

metaresearch head score (Codex)0.000
metaresearch head score (Gemma)0.000
Version: codex-gemma-dda1882f352aValidation status: machine_predicted_unvalidated
Candidate categoriesnone
Consensus categoriesnone
DomainCandidate signal: none · Consensus signal: none
Study designCandidate signal: Observational · Consensus signal: none
GenreCandidate signal: Empirical · Consensus signal: Empirical
Teacher disagreement score0.989
Threshold uncertainty score0.992

Codex and Gemma teacher scores by category

CategoryCodexGemma
Metaresearch0.0000.000
Meta-epidemiology (narrow)0.0000.000
Meta-epidemiology (broad)0.0000.000
Bibliometrics0.0000.000
Science and technology studies0.0000.000
Scholarly communication0.0000.000
Open science0.0000.000
Research integrity0.0000.000
Insufficient payload (model declined to judge)0.0000.000

Machine scores (provisional)

The two teacher heads of the student model, read on this work. A score orders the frame for review; it never asserts a category, and the validation status ships verbatim with every row.

Baseline scores from an immature model (maturity gate not passed, 7 training rounds). Scores rank; they never assert a category.

Opus teacher head0.009
GPT teacher head0.167
Teacher spread0.158 · how far apart the two teachers sit on this one work
Validation statusscore_only:v0-immature-baseline · verbatim from the scoring run: score_only means the number may rank works, and no category label ships from it

Classification

machine, unvalidated

Machine predicted; a candidate call from one teacher head, not a consensus.

The models applied no category: nothing in the taxonomy fit this work.
Study designObservational
Domainnot available
GenreEmpirical

How this classification was reached, model by model and score by score, is at the end of the page under "How this classification was reached".

Quick stats

Citations0
Published2010
Admission routes1
Has abstractyes

Explore more

Same venuecIRcle (University of British Columbia)Same topicSemiconductor materials and devicesFrench-language works237,207