Defect energy levels in p-type GaAsBi and GaAs grown by MBE at low temperatures
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Bibliographic record
Abstract
Deep level defects in p-type GaAs 1− x Bi x ( x < 1%) and GaAs grown by molecular beam epitaxy at substrate temperatures of 330 °C and 370 °C have been characterized by deep level transient spectroscopy. We find that incorporating Bi into GaAs at 330 °C does not affect the total concentration of hole traps, which is ∼4 × 10 16 cm −3 , comparable to the concentration of electron traps observed in Si-doped GaAsBi having a similar alloy composition. Increasing the growth temperature of the p-type GaAsBi ( x = 0.8%) layer from 330 °C to 370 °C reduces the hole trap concentration by an order of magnitude. Moreover, the defects having near mid-gap energy levels that are the most efficient non-radiative recombination centers are present only in GaAsBi layers grown at the lower temperature. These new results are discussed in the context of previous measurements of n-type GaAs and GaAsBi layers grown under similar conditions.
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Full frame distilled prediction
Teacher imitationNot calibrated prevalence, not ground truth. Human validation pending. Learned from the 10,348 direct Codex labels and 10,348 direct Gemma labels. Candidate is the union of thresholded teacher heads; consensus is their intersection. These outputs are machine_predicted_unvalidated and are not human labels or direct frontier model labels.
Codex and Gemma teacher scores by category
| Category | Codex | Gemma |
|---|---|---|
| Metaresearch | 0.000 | 0.000 |
| Meta-epidemiology (narrow) | 0.000 | 0.000 |
| Meta-epidemiology (broad) | 0.000 | 0.000 |
| Bibliometrics | 0.000 | 0.001 |
| Science and technology studies | 0.000 | 0.001 |
| Scholarly communication | 0.000 | 0.000 |
| Open science | 0.000 | 0.000 |
| Research integrity | 0.000 | 0.000 |
| Insufficient payload (model declined to judge) | 0.000 | 0.000 |
Machine scores (provisional)
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Baseline scores from an immature model (maturity gate not passed, 7 training rounds). Scores rank; they never assert a category.
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