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Record W2338990465 · doi:10.1149/ma2016-01/26/1307

Black Phosphorus: New Opportunities in Electronic Device Applications

2016· article· en· W2338990465 on OpenAlexaff
Demin Yin, Youngki Yoon

Bibliographic record

VenueECS Meeting Abstracts · 2016
Typearticle
Languageen
FieldMaterials Science
Topic2D Materials and Applications
Canadian institutionsUniversity of Waterloo
Fundersnot available
KeywordsPhosphoreneTransistorField-effect transistorMaterials scienceSemiconductorOptoelectronicsElectron mobilityMonolayerBand gapBlack phosphorusSiliconEngineering physicsNanotechnologyElectrical engineeringPhysicsEngineeringVoltage

Abstract

fetched live from OpenAlex

Black phosphorus (BP) is one of layered materials drawing significant attentions in solid-state and electrochemical societies. BP has a direct bandgap, which can be tuned by varying the thickness of material or the number of layers. Due to its large carrier mobility, BP is considered as a promising contender for the future electronic device applications. However, designing field-effect transistors (FETs) based on BP is not straightforward since the relevant device physics can be significantly different from that of conventional metal-oxide-semiconductor (MOS) FETs based on 3D materials such as silicon or III-V semiconductors. Therefore, careful engineering practices are required to use BP for transistor applications. In this study, we will mainly discuss design strategies for conventional FET structures and tunnel FETs (TFETs) based on the novel layered material of BP. We perform self-consistent atomistic quantum transport simulations using non-equilibrium Green’s function (NEGF) formalism with tight-binding approximation. For high-performance device applications, conventional FET structure based on BP is considered. Our simulation results reveal that, among few-layer BPs, monolayer BP can provide the best device performance with the largest on current (~5 mA/μm), the largest on-off current ratio (~10 7 ), and the smallest subthreshold swing (62 mV/dec), showing three times larger on current and three orders of magnitude smaller off current compared to 2022 International Technology Roadmap for Semiconductors (ITRS). Although bilayer BP FETs also exhibit as comparable device performance as monolayer BP FETs, in general, thicker BP is not preferable mainly due to the worse gate electrostatic control, which affects the overall device performance negatively. Secondly, for low-power devices, BP is integrated into the lateral tunnel FET structure, where small off current and steep subthreshold slope are of great importance rather than on state characteristics. Our simulation results show bilayer and trilayer BP are preferable for TFETs applications, unlike the conventional FET structure, while monolayer BP suffers from small on current due to its large bandgap. By carefully engineering various device parameters, an ultra-high on-off current ratio (> 10 11 ) and an extremely small subthreshold swing (~15 mV/dec) can be achieved in bilayer and trilayer BP TFETs, demonstrating the great potential of few-layer BP over monolayer. This study shows that BP FETs can be tuned for various target applications by engineering the material and device parameters properly.

Fetched live from OpenAlex and de-inverted. Abstracts are not stored in this database: the inverted indexes are 8.6 GB of the frame’s 9.3 GB of text, and the host has 13 GB free.

How this classification was reachedexpand

Full frame distilled prediction

Teacher imitation

Not calibrated prevalence, not ground truth. Human validation pending. Learned from the 10,348 direct Codex labels and 10,348 direct Gemma labels. Candidate is the union of thresholded teacher heads; consensus is their intersection. These outputs are machine_predicted_unvalidated and are not human labels or direct frontier model labels.

metaresearch head score (Codex)0.001
metaresearch head score (Gemma)0.000
Version: codex-gemma-dda1882f352aValidation status: machine_predicted_unvalidated
Candidate categoriesInsufficient payload (model declined to judge)
Consensus categoriesnone
DomainCandidate signal: none · Consensus signal: none
Study designCandidate signal: Bench or experimental · Consensus signal: Bench or experimental
GenreCandidate signal: Empirical · Consensus signal: Empirical
Teacher disagreement score0.178
Threshold uncertainty score0.999

Codex and Gemma teacher scores by category

CategoryCodexGemma
Metaresearch0.0010.000
Meta-epidemiology (narrow)0.0000.000
Meta-epidemiology (broad)0.0000.000
Bibliometrics0.0000.000
Science and technology studies0.0000.000
Scholarly communication0.0000.000
Open science0.0000.000
Research integrity0.0000.000
Insufficient payload (model declined to judge)0.0000.001

Machine scores (provisional)

The two teacher heads of the student model, read on this work. A score orders the frame for review; it never asserts a category, and the validation status ships verbatim with every row.

Baseline scores from an immature model (maturity gate not passed, 7 training rounds). Scores rank; they never assert a category.

Opus teacher head0.035
GPT teacher head0.268
Teacher spread0.232 · how far apart the two teachers sit on this one work
Validation statusscore_only:v0-immature-baseline · verbatim from the scoring run: score_only means the number may rank works, and no category label ships from it

Classification

machine, unvalidated

Machine predicted; a candidate call from one teacher head, not a consensus.

Study designBench or experimental
Domainnot available
GenreEmpirical

How this classification was reached, model by model and score by score, is at the end of the page under "How this classification was reached".

Quick stats

Citations0
Published2016
Admission routes1
Has abstractyes

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