Effect of SiO_2 Buffer Layers on the Optical and Electrical Properties of Sb-doped SnO_2 Thin Films by Sol-gel Process
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Bibliographic record
Abstract
The Sb-doped SnO2 thin films synthesized by a simple sol-gel method were investigated by means of X-ray diffractometer,visible spectrophotometer and 4-point probes resistivity measurements system.The samples were polycrystalline thin films with rutile structure of undoped SnO2.The results showed that the resistivities of the films decreased at first and then increased with increase of the doping concentration from 1% to 6%,and reached its minimum 8.7×10-3Ω·cm with the doping concentration of 5%.Further analysis indicated that with the increase of the thickness of the buffer layers,the square resistance of the thin films decreased and reached minimum 95Ω/□ and the resistivity reached 1.1×10-3Ω·cm with Sb-doped concentration of 5%.
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Codex and Gemma teacher scores by category
| Category | Codex | Gemma |
|---|---|---|
| Metaresearch | 0.000 | 0.000 |
| Meta-epidemiology (narrow) | 0.000 | 0.000 |
| Meta-epidemiology (broad) | 0.000 | 0.000 |
| Bibliometrics | 0.000 | 0.000 |
| Science and technology studies | 0.000 | 0.000 |
| Scholarly communication | 0.000 | 0.000 |
| Open science | 0.000 | 0.000 |
| Research integrity | 0.000 | 0.000 |
| Insufficient payload (model declined to judge) | 0.000 | 0.000 |
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Baseline scores from an immature model (maturity gate not passed, 7 training rounds). Scores rank; they never assert a category.
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