A Study of The Low Frequency-Dependent PbO Based Schottky Barrier Diode
Why is this work in the frame?
A frame that forgets how it found something cannot be audited. These are the routes that admitted this work.
No Canadian affiliation. An affiliation-only frame — the usual design — would never have seen this work. It is one of the works that make the case for inverting the frame.
Post-publication record
- Nature
- Retraction
- Reason
- Euphemisms for Plagiarism;Plagiarism of/in Article;
- Date
- 4/28/2018 0:00
- Flagged by OpenAlex?
- Yes
Source: Retraction Watch, joined by DOI. OpenAlex records retraction as is_retracted, a boolean over a state space with at least four values, so it cannot express an expression of concern, a correction or a reinstatement — it reports them as false, which reads as “fine”.
Machine scores (provisional)
Baseline scores from an immature model (maturity gate not passed, 7 training rounds). Scores rank; they never assert a category.
The two teacher heads of the student model, read on this work. A score orders the frame for review; it never asserts a category, and the validation status ships verbatim with every row.
- Teacher spread
- 0.226 · how far apart the two teachers sit on this one work
- Validation status
score_only:v0-immature-baseline· verbatim from the scoring run: score_only means the number may rank works, and no category label ships from it
Abstract
Low-frequency characteristics of the lead oxide (PbO) based Schottky barrier diode was investigated in this study. PbO thin film has been successfully grown on p-type Si substrate. The capacitance-voltage (C-V) and conductance-voltage (G-V) characteristics of the metal-oxide (Al/PbO/pSi) were measured at the low frequency range from 10 kHz to 100 kHz. Electrical properties including barrier height (φb), Fermi level (EF), the width of the depletion region (WD), series resistance (Rs) and interface states (Dit) of the diode have been analyzed by using C-V and G/w-V characteristics. It was found that the values of C and G decreased by the increasing frequency. C-V and G-V measurements have been shown that series resistance, interface states play an important role in understanding the electrical parameters of Al/PbO/p-Si structure.
Fetched live from OpenAlex and de-inverted. Abstracts are not stored in this database: the inverted indexes are 8.6 GB of the frame’s 9.3 GB of text, and the host has 13 GB free.
The record
- Venue
- Canadian Journal of Physics
- Topic
- Semiconductor materials and interfaces
- Field
- Physics and Astronomy
- Canadian institutions
- —
- Funders
- —
- Keywords
- PhysicsSchottky diodeSchottky barrierDiodeOptoelectronicsAtomic physics
- Has abstract in OpenAlex
- yes