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Record W2937095738 · doi:10.1116/1.5088962

Hybrid epitaxy technique for the growth of high-quality AlInAs and GaInAs layers on InP substrates

2019· article· en· W2937095738 on OpenAlexafffund
Thierno Mamoudou Diallo, Alex Brice Poungoué Mbeunmi, Mohamed El-Gahouchi, Mourad Jellite, Roxana Arvinte, Mohammad Reza Aziziyan, Richard Arès, S. Fafard, Abderraouf Boucherif

Bibliographic record

VenueJournal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 2019
Typearticle
Languageen
FieldPhysics and Astronomy
TopicSemiconductor Quantum Structures and Devices
Canadian institutionsInstitut interdisciplinaire d'innovation technologiqueUniversité de Sherbrooke
FundersFonds de recherche du Québec – Nature et technologiesNatural Sciences and Engineering Research Council of Canada
KeywordsTrimethylindiumTriethylgalliumEpitaxyMaterials scienceMetalorganic vapour phase epitaxyChemical vapor depositionChemical beam epitaxyOptoelectronicsIndiumDopingFull width at half maximumWaferAnalytical Chemistry (journal)Indium phosphideArsineMolecular beam epitaxyGallium arsenideCatalysisNanotechnologyChemistryLayer (electronics)

Abstract

fetched live from OpenAlex

The quality and properties of epitaxial films are strongly determined by the reactor type and the precursor source phase. Such parameters can impose limitations in terms of background doping, interface sharpness, clustering, phase separation, and homogeneity. The authors have implemented a hybrid epitaxy technique that employs, simultaneously, vapor and solid sources as group III precursors. The system combines the high throughput and the versatility of gas sources as well as the high purity of solid sources. Using this technique, the authors successfully demonstrated epitaxial growth of Al0.48In0.52As and Ga0.47In0.53As layers on Fe-doped semi-insulating InP (001) substrates with interesting properties, compared with the epilayers grown by more standard techniques (chemical beam epitaxy, metal-organic chemical vapor deposition, and MBE). For AlInAs growth, trimethylindium and solid aluminum were used as In and Al precursors, respectively. In the case of GaInAs, triethylgallium and solid indium were used, respectively, as Ga and In precursors. Thermally cracked arsine (AsH3) was used as an As (group V) precursor for both alloys. The AlInAs and GaInAs epilayers grown at a temperature of 500 °C exhibited featureless surfaces with RMS roughness of 0.2 and 1 nm, respectively. Lattice mismatch is of 134 ppm, for AlInAs, and −96 ppm, for GaInAs, which were determined from high-resolution x-ray diffraction (HR-XRD) patterns and showed a large number of Pendellösung fringes, indicating a high crystalline quality. An FWHM of 18.5 arcs was obtained for GaInAs epilayers, while HR-XRD mapping of a full 2-in. wafer confirmed a viable lattice mismatch homogeneity (standard deviation of 0.026%) for as-grown layers. The authors observed room-temperature background doping values as low as 3 × 1015 cm−3, for AlInAs, and 1 × 1015 cm−3, for GaInAs. Analysis of the PL spectra at 20 K showed an FWHM of 8 meV, for AlInAs, and 9.7 meV, for GaInAs, demonstrating a very good optical quality of the epilayers. In addition, they have investigated the effects of the growth temperature and of the arsine pressure on epilayer properties. They also discuss the optimum conditions for the growth of high-quality Al0.48In0.52As and Ga0.47In0.53As layers on InP (001) substrates using this hybrid epitaxy technique.

Fetched live from OpenAlex and de-inverted. Abstracts are not stored in this database: the inverted indexes are 8.6 GB of the frame’s 9.3 GB of text, and the host has 13 GB free.

How this classification was reachedexpand

Full frame distilled prediction

Teacher imitation

Not calibrated prevalence, not ground truth. Human validation pending. Learned from the 10,348 direct Codex labels and 10,348 direct Gemma labels. Candidate is the union of thresholded teacher heads; consensus is their intersection. These outputs are machine_predicted_unvalidated and are not human labels or direct frontier model labels.

metaresearch head score (Codex)0.002
metaresearch head score (Gemma)0.000
Version: codex-gemma-dda1882f352aValidation status: machine_predicted_unvalidated
Candidate categoriesnone
Consensus categoriesnone
DomainCandidate signal: none · Consensus signal: none
Study designCandidate signal: Bench or experimental · Consensus signal: Bench or experimental
GenreCandidate signal: Empirical · Consensus signal: Empirical
Teacher disagreement score0.078
Threshold uncertainty score0.643

Codex and Gemma teacher scores by category

CategoryCodexGemma
Metaresearch0.0020.000
Meta-epidemiology (narrow)0.0000.000
Meta-epidemiology (broad)0.0010.000
Bibliometrics0.0000.000
Science and technology studies0.0000.001
Scholarly communication0.0000.000
Open science0.0000.000
Research integrity0.0000.000
Insufficient payload (model declined to judge)0.0000.000

Machine scores (provisional)

The two teacher heads of the student model, read on this work. A score orders the frame for review; it never asserts a category, and the validation status ships verbatim with every row.

Baseline scores from an immature model (maturity gate not passed, 7 training rounds). Scores rank; they never assert a category.

Opus teacher head0.015
GPT teacher head0.256
Teacher spread0.241 · how far apart the two teachers sit on this one work
Validation statusscore_only:v0-immature-baseline · verbatim from the scoring run: score_only means the number may rank works, and no category label ships from it

Classification

machine, unvalidated

Machine predicted; a candidate call from one teacher head, not a consensus.

The models applied no category: nothing in the taxonomy fit this work.
Study designBench or experimental
Domainnot available
GenreEmpirical

How this classification was reached, model by model and score by score, is at the end of the page under "How this classification was reached".

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Citations3
Published2019
Admission routes2
Has abstractyes

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