Review of Carbon Nanotube Field Effect Transistor for Nanoscale Regime
Why this work is in the frame
A frame that forgets how it found something cannot be audited. These are the routes that admitted this work.
Bibliographic record
Abstract
Background: The need for high performance, small size, low delay, low power consumption, and long battery backup of portable systems is increasing with the advancement of technology. Many features of portable systems can be improved using scaling methods. In the scaling process, reducing the size of devices causes serious difficulties, including the short channel effect (SCE) and leakage current, which degenerates the characteristics of the systems. Objective: In this review paper, a trending carbon nanotube field effect transistor (CNTFET) technology is discussed in detail. CNTFET can replace the conventional metal oxide semiconductor field effect transistor (MOSFET) technology to overcome the SCE problems in the nanoscale regime and also meet the requirements of portable systems. Methods: The CNTFET is an extremely good nanoscale technology due to its one-dimension band structure, high transconductance, high electron mobility, superior control over channel formation, and better threshold voltage. This technology is used to construct high-performance and low-power circuits by replacing the MOSFET technology. CNTFET in comparison to MOSFET takes the carbon nanotube (CNT) as a channel region. Results: The value of threshold voltage in CNTFET changes with the diameter of CNT. The threshold voltage of the devices controls many parameters at the circuit-level design. Hence, the detailed operation and the characteristics of CNTFET devices are presented in this review paper. The existing CNTFET-based ternary full adder (TFA) circuits are also described in this review paper for the performance evaluation of different parameters. Conclusion: CNTFET technology is the possible solution for the SCE in the nanoscale regime and is capable to design efficient logic circuits. The circuits using the CNTFET technology can provide better performance and various advantages, including fast speed, small area, and low power consumption, in comparison to the MOSFET circuits. Thus, CNTFET technology is the best choice for circuit designs at the nanoscale.
Fetched live from OpenAlex and de-inverted. Abstracts are not stored in this database: the inverted indexes are 8.6 GB of the frame’s 9.3 GB of text, and the host has 13 GB free.
Full frame distilled prediction
Teacher imitationNot calibrated prevalence, not ground truth. Human validation pending. Learned from the 10,348 direct Codex labels and 10,348 direct Gemma labels. Candidate is the union of thresholded teacher heads; consensus is their intersection. These outputs are machine_predicted_unvalidated and are not human labels or direct frontier model labels.
Codex and Gemma teacher scores by category
| Category | Codex | Gemma |
|---|---|---|
| Metaresearch | 0.002 | 0.001 |
| Meta-epidemiology (narrow) | 0.000 | 0.000 |
| Meta-epidemiology (broad) | 0.001 | 0.000 |
| Bibliometrics | 0.000 | 0.001 |
| Science and technology studies | 0.000 | 0.000 |
| Scholarly communication | 0.000 | 0.000 |
| Open science | 0.001 | 0.000 |
| Research integrity | 0.000 | 0.000 |
| Insufficient payload (model declined to judge) | 0.000 | 0.000 |
Machine scores (provisional)
The two teacher heads of the student model, read on this work. A score orders the frame for review; it never asserts a category, and the validation status ships verbatim with every row.
Baseline scores from an immature model (maturity gate not passed, 7 training rounds). Scores rank; they never assert a category.
score_only:v0-immature-baseline · verbatim from the scoring run: score_only means the number may rank works, and no category label ships from it