MétaCan
Menu
← Back to cohort
Record W4387031817

Interfaces engineering to enhance ferroelectricity in ultra-thin HZO CMOS compatible FTJ

2023· preprint· en· W4387031817 on OpenAlexaff
Greta Segantini, Benoît Manchon, Matthieu Bugnet, Pédro Rojo Romeo, Damien Deleruyelle, Sharath Sriram, Bertrand Vilquin

Bibliographic record

VenueHAL (Le Centre pour la Communication Scientifique Directe) · 2023
Typepreprint
Languageen
FieldEngineering
TopicFerroelectric and Negative Capacitance Devices
Canadian institutionsInstitut interdisciplinaire d'innovation technologiqueUniversité de Sherbrooke
Fundersnot available
KeywordsFerroelectricityMaterials scienceOptoelectronicsCMOSSatellite broadcastingNanotechnologyComputer scienceEngineeringAerospace engineering
DOInot available

Abstract

fetched live from OpenAlex

The exponential development of artificial intelligence technologies has increased the demand of computing power and energy efficiency. In this respect, ferroelectric tunnel junction (FTJ) memristors are extremely promising components for the implementation of beyond-Von Neumann hardware architectures, e.g. brain-inspired computing, for increasing device scalability and for their ultra-low operating current [1]. The discovery of ferroelectricity in HfO2 -based materials [2] has paved the way for the integration of ferroelectric devices into the complementary-metal-oxide-semiconductor industry. Furthermore, the Hf0.5Zr0.5O2 (HZO) compound, through the Hf:Zr 1:1 substitution, has attracted great interest due to its high polarisation value and low crystallization temperature.Here, we investigate four different 6 nm-thick HZO-based heterostructures, which were entirely realized by sputtering [3], with electrodes made of titanium nitride and/or tungsten.We report a systematic and exhaustive analysis of the structural and chemical properties of the electrode/ferroelectric interfaces of different heterostructures, using a multiscale combination of techniques, such as X-ray diffraction, electron energy-loss spectroscopy, and high-resolution TEM. The results demonstrate how the top and bottom interfaces influence the ferroelectric performances of ultra-thin HZO-based tunnel devices.This work provides relevant and useful insights for the synthesis of high quality HZO-based stacks with enhanced ferroelectricity, which could serve as memory units for brain-inspired hardware architectures. Device-to-device variability is, indeed, one of the main issues to face for the realization of neuromorphic networks, where arrays of millions of memory components are used [4]. For this reason, the improvement of material engineering and optimization of device structure are critical aspects to deal with.This work is supported by the I3E ECLAUSion project that has received funding from the European Union's Horizon 2020 research and innovation programme under the Marie Skłodowska-Curie grant agreement No 801512.References:[1] R. Berdan et al., Nat. Electron., vol. 3, no. 5, pp. 259–266, 2020.[2] T. S. Böscke et al., Appl. Phys. Lett., vol. 99, no. 10, 2011.[3] G. Segantini et al., Phys. status solidi – Rapid Res. Lett., p. 2100583, Mar. 2022.[4] A. Mehonic et al., Adv. Intell. Syst., vol. 2, no. 11, p. 2000085, Nov. 2020.

Fetched live from OpenAlex and de-inverted. Abstracts are not stored in this database: the inverted indexes are 8.6 GB of the frame’s 9.3 GB of text, and the host has 13 GB free.

How this classification was reachedexpand

Full frame machine prediction

Teacher imitation

Not calibrated prevalence, not ground truth. Human validation pending. The Gemma side is a direct model label for every work in the frame, read from the title-only record. The Codex side is a classifier learned from the 10,348 direct Codex labels and calibrated to design-weighted sample rates; fields without enough sample support carry no Codex call. Candidate is the union of the two sides; consensus is their intersection. These outputs are machine_predicted_unvalidated and are not human labels.

metaresearch head score (Codex)0.000
metaresearch head score (Gemma)0.000
Version: metacan-v3-hybrid-931329e0061cValidation status: machine_predicted_unvalidated
Candidate categoriesnone
Consensus categoriesnone
DomainCandidate signal: none · Consensus signal: none
Study designCandidate signal: Bench or experimental · Consensus signal: Bench or experimental
GenreCandidate signal: Empirical · Consensus signal: Empirical
Teacher disagreement score0.002
Threshold uncertainty score0.008

Distilled classifier scores by category (both heads)

CategoryCodexGemma
Metaresearch0.0000.000
Meta-epidemiology (narrow)0.0000.000
Meta-epidemiology (broad)0.0000.000
Bibliometrics0.0000.000
Science and technology studies0.0000.000
Scholarly communication0.0010.000
Open science0.0000.000
Research integrity0.0000.000
Insufficient payload (model declined to judge)0.0020.000

Machine scores (provisional)

The two teacher heads of the student model, read on this work. A score orders the frame for review; it never asserts a category, and the validation status ships verbatim with every row.

Baseline scores from an immature model (maturity gate not passed, 7 training rounds). Scores rank; they never assert a category.

Opus teacher head0.015
GPT teacher head0.233
Teacher spread0.219 · how far apart the two teachers sit on this one work
Validation statusscore_only:v0-immature-baseline · verbatim from the scoring run: score_only means the number may rank works, and no category label ships from it

Classification

machine, unvalidated

Machine predicted; a candidate call from one source (direct Gemma or distilled Codex), not a consensus.

The models applied no category: nothing in the taxonomy fit this work.
Study designBench or experimental
Domainnot available
GenreEmpirical

How this classification was reached, model by model and score by score, is at the end of the page under "How this classification was reached".

Quick stats

Citations0
Published2023
Admission routes1
Has abstractyes

Explore more

Same venueHAL (Le Centre pour la Communication Scientifique Directe)→Same topicFerroelectric and Negative Capacitance Devices→French-language works237,207→