Analyzing false turn-on events with varying gate drive parameters in high voltage GaN devices
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Bibliographic record
Abstract
In this paper, we address the problem of false turn-on effects in a half-bridge GaN power converter in terms of circuit and device parameters. The model shows that the inherent false turn-on problem is caused by slew rates d v ds dt and d v gs dt during the switching transients occurring at the turn-on and off phases. A higher slew rate propagates the gate driver voltage to overshoot beyond the threshold voltage causing it to accidentally turn on This study shows that d v ds dt is dependent on the internal device parameters such as g fs (transconductance) and C oss ( output capacitance). From the CV characteristics, it is pretty much evident that the internal capacitances C oss and C rss (reverse transfer capacitance) are reduced with higher drain voltage enabling higher slew rates which increases the probability of false turn-on problems. Experimental results at numerous operating points at 400 V with the variation in different gate drive parameters support the analysis.
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Full frame distilled prediction
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Codex and Gemma teacher scores by category
| Category | Codex | Gemma |
|---|---|---|
| Metaresearch | 0.001 | 0.000 |
| Meta-epidemiology (narrow) | 0.000 | 0.000 |
| Meta-epidemiology (broad) | 0.000 | 0.000 |
| Bibliometrics | 0.000 | 0.000 |
| Science and technology studies | 0.000 | 0.000 |
| Scholarly communication | 0.000 | 0.000 |
| Open science | 0.000 | 0.000 |
| Research integrity | 0.000 | 0.000 |
| Insufficient payload (model declined to judge) | 0.000 | 0.000 |
Machine scores (provisional)
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Baseline scores from an immature model (maturity gate not passed, 7 training rounds). Scores rank; they never assert a category.
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