Photoelastic Refractive Index Changes in GaAs Investigated by Finite Element Method (FEM) Simulations
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Bibliographic record
Abstract
Changes in the refractive indices of a GaAs laser chip owing to bonding strain are investigated by two-dimensional (2D) and three-dimensional (3D) finite element method (FEM) simulations. The strain induced by die attach (i.e., the bonding strain) was estimated by fitting simulations to the measured degree of polarisation (DOP) of photoluminescence from the facet of the bonded chip. Changes in the refractive indices were estimated using the strains obtained from fits to DOP data. Differences between the 2D and 3D FEM estimations of the deformation and of the photo-elastic effect are noted. It is recommended that 2D FEM simulations be used as starting points for 3D FEM simulations. Elastic constants for GaAs in plane-of-the-facet coordinate systems for 2D (plane stress and plane strain) and 3D FEM simulations are given.
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Teacher imitationNot calibrated prevalence, not ground truth. Human validation pending. Learned from the 10,348 direct Codex labels and 10,348 direct Gemma labels. Candidate is the union of thresholded teacher heads; consensus is their intersection. These outputs are machine_predicted_unvalidated and are not human labels or direct frontier model labels.
Codex and Gemma teacher scores by category
| Category | Codex | Gemma |
|---|---|---|
| Metaresearch | 0.000 | 0.001 |
| Meta-epidemiology (narrow) | 0.000 | 0.000 |
| Meta-epidemiology (broad) | 0.000 | 0.000 |
| Bibliometrics | 0.000 | 0.000 |
| Science and technology studies | 0.000 | 0.000 |
| Scholarly communication | 0.000 | 0.000 |
| Open science | 0.000 | 0.000 |
| Research integrity | 0.000 | 0.000 |
| Insufficient payload (model declined to judge) | 0.000 | 0.000 |
Machine scores (provisional)
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Baseline scores from an immature model (maturity gate not passed, 7 training rounds). Scores rank; they never assert a category.
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