MétaCan
Menu
Back to cohort
Record W4412541770 · doi:10.1149/ma2025-01392091mtgabs

Top-Down Fabricated Atomic Layer Deposited Oxides Passivated InGaN/GaN Nanostructured Photocatalysts for Artificial Photosynthesis

2025· article· en· W4412541770 on OpenAlexaboutno aff
Md. Ataur Rahman, Nirmal Anand, Dipon Kumar Ghosh, Christy Giji Jenson, Md. Islam, Md Zunaid Baten, Sharif Sadaf

Bibliographic record

VenueECS Meeting Abstracts · 2025
Typearticle
Languageen
FieldPhysics and Astronomy
TopicGaN-based semiconductor devices and materials
Canadian institutionsnot available
Fundersnot available
KeywordsMaterials scienceArtificial photosynthesisAtomic layer depositionLayer (electronics)PhotosynthesisNanotechnologyChemical engineeringOptoelectronicsPhotocatalysisChemistryCatalysis

Abstract

fetched live from OpenAlex

Photocatalytic water splitting is regarded as a promising technology to convert solar energy into hydrogen. However, most of the photocatalysts exihibit limited efficiency because of their wide bandgap, inappropriate band edge positions for redox reactions, lower active sites, and poor charge carrier separation. In contrast to planar structures, nanowires (NWs) photocatalysts have large surface-to-volume ratios, shortened diffusion lengths, efficient charge carrier separation and transport, and enhanced optical absorption [1]. III-nitride nanostructured semiconductors, such as InGaN is a potential candidate as photocatalysts due to their bandgap engineering, suitable band edge to straddle the redox potentials. The band gap of InGaN can be controllably tuned by varying In compositions to harvest large portion of the visible solar spectrum [2]. First, we investigated photoelectrochemical (PEC) properties of planar InGaN/GaN multiple quantum wells (MQWs) with varying indium contents (~15%, ~22%, and ~27%), and identified In~22% as optimal for overall water splitting. Subsequently, we fabricated InGaN/GaN nanowires (NWs) heterostructures (In~22%) photocatalysts using a scalable silica nanosphere lithography technique. Additionally, the sidewalls of the NWs were passivated with an ultrathin layer of Al 2 O 3 using atomic layer deposition (ALD) technique. A systematic comparison of photocurrent density with small bias potential versus reversible hydrogen electrode (V RHE ) was conducted for planar, NW, and Al 2 O 3 -coated NWs of In 0.22 Ga 0.78 N/GaN heterostructures under simulated AM 1.5G solar irradiation (100 mW/cm²). The NW photoanodes showed a higher photocurrent density (1.9 mA/cm 2 ) than their planar counterparts. On the other hand, a significant rise in photocurrent density (80%) at 1.5 V RHE was observed after deposition of a thin layer Al 2 O 3 on NWs. More importantly, the onset potential undergoes a cathodic shift to −0.47 V RHE , indicating a reduction in the overpotential required for self-driven water splitting. Furthermore, the Al 2 O 3 -passivated NWs generated higher photvoltage (0.87 V RHE ). These findings highlight the role of surface passivation in enhancing the performance of nanostructured green light-emitting In 0.22 Ga 0.78 N/GaN MQWs photoanodes for PEC applications. The study will further explore the optimal Al 2 O 3 passivation thickness on NWs in improving PEC activity and photostability. Acknowledgement This research was supported by the Natural Sciences and Engineering Research Council of Canada (NSERC) through Alliance Grant Programs. References Dong, Wan Jae, and Zetian Mi., Journal of Materials Chemistry A 11 (2023): 5427-5459. Alqahtani, Mahdi, et al., ACS Applied Energy Materials 11 (2018): 6417-6424. Figure 1

Fetched live from OpenAlex and de-inverted. Abstracts are not stored in this database: the inverted indexes are 8.6 GB of the frame’s 9.3 GB of text, and the host has 13 GB free.

How this classification was reachedexpand

Full frame distilled prediction

Teacher imitation

Not calibrated prevalence, not ground truth. Human validation pending. Learned from the 10,348 direct Codex labels and 10,348 direct Gemma labels. Candidate is the union of thresholded teacher heads; consensus is their intersection. These outputs are machine_predicted_unvalidated and are not human labels or direct frontier model labels.

metaresearch head score (Codex)0.000
metaresearch head score (Gemma)0.000
Version: codex-gemma-dda1882f352aValidation status: machine_predicted_unvalidated
Candidate categoriesMeta-epidemiology (narrow)
Consensus categoriesnone
DomainCandidate signal: none · Consensus signal: none
Study designCandidate signal: Bench or experimental · Consensus signal: Bench or experimental
GenreCandidate signal: Empirical · Consensus signal: Empirical
Teacher disagreement score0.008
Threshold uncertainty score1.000

Codex and Gemma teacher scores by category

CategoryCodexGemma
Metaresearch0.0000.000
Meta-epidemiology (narrow)0.0000.000
Meta-epidemiology (broad)0.0000.000
Bibliometrics0.0000.000
Science and technology studies0.0000.000
Scholarly communication0.0000.000
Open science0.0000.000
Research integrity0.0000.000
Insufficient payload (model declined to judge)0.0000.000

Machine scores (provisional)

The two teacher heads of the student model, read on this work. A score orders the frame for review; it never asserts a category, and the validation status ships verbatim with every row.

Baseline scores from an immature model (maturity gate not passed, 7 training rounds). Scores rank; they never assert a category.

Opus teacher head0.014
GPT teacher head0.254
Teacher spread0.240 · how far apart the two teachers sit on this one work
Validation statusscore_only:v0-immature-baseline · verbatim from the scoring run: score_only means the number may rank works, and no category label ships from it

Classification

machine, unvalidated

Machine predicted; a candidate call from one teacher head, not a consensus.

Study designBench or experimental
Domainnot available
GenreEmpirical

How this classification was reached, model by model and score by score, is at the end of the page under "How this classification was reached".

Quick stats

Citations0
Published2025
Admission routes1
Has abstractyes

Explore more

Same venueECS Meeting AbstractsSame topicGaN-based semiconductor devices and materialsFrench-language works237,207