Vertical Oxide Thin-Film Transistor with Solution-Processed Channel Define Layer
Notice bibliographique
Résumé
Abstract High performance thin-film transistor (TFT) is essential for the next-generation display. Especially, scale-downed TFT becomes very important to develop high resolution display. The vertical-channel TFTs (V-TFTs) attracts lots of interests from the view point of minimizing pixel size because V-TFTs have very small footprint compared to the lateral TFT. V-TFTs provide the smallest pixel size without the limitation of channel length. [1] In addition, V-TFTs could show high strain stress stability due to the small channel size formed vertically when they are adapted in flexible display. Channel length of V-TFTs is controlled by the thickness of spacer placed between source and drain. Since the main purpose of adoption of V-TFTs is to increase the current driving ability, typical channel length of V-TFT is shorter than 1 um (~0.5 um). The length of channel in vertical TFT, however, should be adjustable according to the TFT applications. The major method to deposit spacer which determine the channel length (channel define layer) is vacuum process such as plasma-enhanced chemical vapor deposition (PECVD). Such vacuum process could provide high film performance, quality and good uniformity. Nonetheless, vacuum process has disadvantage in the deposition of spacer with thick thickness because of very long process time. In contrast, solution-process coating is easy and fast method. By controlling coating speed and time, solution process provides thick films uniformly. Furthermore, solution process can be applied using both of organic and inorganic materials. While inorganic materials result in films with low defects, the space processed with organic materials yields low stress, making this suitable for the flexible vertical TFTs. In this study, we fabricate vertical TFT with spacers deposited with various materials such as organic and inorganic by solution-process coating. We also investigate back-channel effect and TFT strain stress depending on the kinds of spacer materials. We select three different types of materials for the spacer; SiO 2 , PI, carbon based organic material. Solution-processed SiO 2 film have dielectric constant of 4.27 and similar film quality with PECVD SiO 2 . The solution-processed films show very low leakage current of 1.35x10 -9 A/cm -2 at 0.1MV/cm. Carbon based organic material also has low dielectric constant and is approximately 1um~3um thick. We studied the effect of back-channel according to various spacer materials. Instead of V-TFTs, top gate staggered TFTs were fabricated to mimic the structure of V-TFT because both TFTs have same process sequence. Figure 1(a) shows the schematic structure of top-gate TFT. The various buffer layers corresponding to the spacer in V-TFT were deposited by solution processes. The TFT with solution-processed film did not show degradation of electrical characteristics in comparison to that with PECVD SiO 2 . After confirming the feasibility of solution-processed spacer for the vertical TFT, three types of solution-processed layer are applied to actual vertical TFT as a spacer. The patterned source ITO electrode was coated with solution processed spacer, followed by the deposition of drain electrode. Drain and spacer were patterned with spacer mask. In sequence, active, gate insulator and gate are deposited and patterned at once. We will report the performance of V-TFTs with solution processed spacer in terms of mobility, stability, and thermal stability. Figure 1. (a) Schematic diagram of top-gate TFT, (b) Schematic structure of vertical TFT with solution processed spacer Acknowledgements This work was supported by 'The Cross-Ministry Giga KOREA Project' grant from the Ministry of Science, ICT and Future Planning, Korea [GK15D0100]. References [1]. Chi-Sun Hwang, Sang-Hee Ko Park, Himchan Oh, Min-Ki Ryu, and Sung-Min Yoon, IEEE ELECTRON DEVICE L, VOL. 35, NO. 3, p360-362, (2014) Figure 1
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Prédiction distillée sur la base complète
Imitation des enseignantsNi prévalence calibrée, ni vérité terrain. Validation humaine à venir. Apprise à partir de 10 348 étiquettes directes de Codex et de 10 348 étiquettes directes de Gemma. Le mode candidate est l'union des têtes enseignantes seuillées; le consensus est leur intersection. Ces sorties portent le statut machine_predicted_unvalidated et ne sont ni des étiquettes humaines ni des étiquettes directes de modèles de pointe.
Scores Codex et Gemma par catégorie
| Catégorie | Codex | Gemma |
|---|---|---|
| Métarecherche | 0,000 | 0,000 |
| Méta-épidémiologie (sens strict) | 0,000 | 0,000 |
| Méta-épidémiologie (sens large) | 0,000 | 0,000 |
| Bibliométrie | 0,000 | 0,000 |
| Études des sciences et des technologies | 0,000 | 0,000 |
| Communication savante | 0,000 | 0,000 |
| Science ouverte | 0,000 | 0,000 |
| Intégrité de la recherche | 0,000 | 0,000 |
| Charge utile insuffisante (le modèle a refusé de juger) | 0,000 | 0,000 |
Scores machine (provisoires)
Les deux têtes enseignantes du modèle étudiant, lues sur ce travail. Un score ordonne la base pour la relecture; il n'affirme jamais une catégorie, et le statut de validation accompagne chaque rangée tel quel.
Scores de référence d'un modèle non mature (critères de maturité non atteints, 7 itérations). Un score ordonne; il n'affirme jamais une catégorie.
score_only:v0-immature-baseline · tel quel depuis la passe de notation : score_only signifie que le nombre peut ordonner les travaux, et qu'aucune étiquette de catégorie n'en découleClassification
machine, non validéePrédiction automatique; un appel candidat d’une seule tête enseignante, pas un consensus.
Le détail, modèle par modèle et score par score, se trouve en fin de page sous « Comment cette classification a été obtenue ».