(Invited) Photoluminescence Diagnostics of Nanoscale Dissolution of III-V Semiconductor Nanoheterostructures
Notice bibliographique
Résumé
Etching of semiconducting materials with atomic level resolution is of high interest to technologies addressing the fabrication of low-dimensional devices and the tunability of their optoelectronic properties. Atomic layer etching (ALE) based on cycling between a self-limited surface reaction and selective removal of the reaction products is a promising technique addressing the challenges of controlling the variability necessary in the atomic-scale material removal [1]. However, the requirement to alter the processing hardware while completing two cycles of ALE, as well as the lack of a simple diagnostic technique for monitoring in situ material etching with a sub-monolayer resolution, have restricted the application of this technique to laboratories equipped with relatively expensive hardware infrastructures. To alleviate some of the problems of the ALE technique, we have investigated digital photo-assisted etching of GaAs/AlGaAs nanoheterostructures, which has the potential to offer a simple approach for fabrication of low-dimensional devices. The premise of this approach is based on the expectation that dark corrosion of a semiconductor is negligible in a processed solution. This is the case, for instance, for some of the III-V semiconductors immersed in deionized water or weak aqueous solutions of ammonia. The photo-ALE is an innovative method of a cycled digital photocorrosion (DIP) of semiconductors that we have explored for shallow etching of three-dimensional GaAs/AlGaAs nanoheterostructures [2, 3]. The rate and stability of DIP depends on the energy and intensity of photons employed for optical excitation of the samples, as well as on the chemistry of a liquid environment employed for processing [4]. The excitation of electron-hole pairs allows the convenient application of the photoluminescence (PL) effect for monitoring in situ of the DIP process. The DIP process can also be monitored by measuring the open circuit potential of revealed surfaces [5], which is of a particular interest to materials with negligible PL emission. In the frame of this presentation, I will discuss some fundamental aspects of the DIP process and application of the PL effect for monitoring sub-monolayer removal of GaAs and AlGaAs. The compatibility of the photo-ALE technology with the chemistry of liquids employed for passivation of surfaces and coating with self-assembled monolayers offers the potential for in situ passivation of atomically clean surfaces. Furthermore, the sensitivity of a low-excitation intensity generated PL signal to surface defects allows spatially-resolvable recording of the perturbation of the DIP process. I will also discuss the perspective of an application of the photo-ALE to other III-V materials, as well as to Si and SiGe. ______________________ [1] K. J. Kanarik et al. , "Overview of atomic layer etching in the semiconductor industry," Journal of Vacuum Science& Technology A: Vacuum, Surfaces, and Films, vol. 33, no. 2, p. 020802, 2015, doi: 10.1116/1.4913379. [2] S. Aithal, N. Liu, and J. J. Dubowski, "Photocorrosion metrology of photoluminescence emitting GaAs/AlGaAs heterostructures," Journal of Physics D: Applied Physics, vol. 50, no. 3, p. 035106, 2017. [3] M. R. Aziziyan, H. Sharma, and J. J. Dubowski, "Photo-Atomic Layer Etching of GaAs/AlGaAs Nanoheterostructures," Acs Appl Mater Inter, vol. 11, no. 19, pp. 17968-17978, 2019/05/15 2019, doi: 10.1021/acsami.9b02079. [4] H. Sharma, K. Moumanis, and J. J. Dubowski, "pH-Dependent Photocorrosion of GaAs/AlGaAs Quantum Well Microstructures," The Journal of Physical Chemistry C, vol. 120, no. 45, pp. 26129-26137, 2016/11/17 2016, doi: 10.1021/acs.jpcc.6b08844. [5]. S. Aithal and J. J. Dubowski, "Open circuit potential monitored digital photocorrosion of GaAs/AlGaAs quantum well microstructures," Appl Phys Lett, vol. 112, no. 15, p. 153102, 2018, doi: 10.1063/1.5023134.
Récupéré en direct depuis OpenAlex et désinversé. Les résumés ne sont pas conservés dans cette base de données : les index inversés représentent 8,6 Go des 9,3 Go de texte de la base, et le serveur dispose de 13 Go libres.
Comment cette classification a été obtenuedéplier
Prédiction distillée sur la base complète
Imitation des enseignantsNi prévalence calibrée, ni vérité terrain. Validation humaine à venir. Apprise à partir de 10 348 étiquettes directes de Codex et de 10 348 étiquettes directes de Gemma. Le mode candidate est l'union des têtes enseignantes seuillées; le consensus est leur intersection. Ces sorties portent le statut machine_predicted_unvalidated et ne sont ni des étiquettes humaines ni des étiquettes directes de modèles de pointe.
Scores Codex et Gemma par catégorie
| Catégorie | Codex | Gemma |
|---|---|---|
| Métarecherche | 0,000 | 0,000 |
| Méta-épidémiologie (sens strict) | 0,000 | 0,000 |
| Méta-épidémiologie (sens large) | 0,000 | 0,000 |
| Bibliométrie | 0,000 | 0,000 |
| Études des sciences et des technologies | 0,000 | 0,000 |
| Communication savante | 0,000 | 0,000 |
| Science ouverte | 0,000 | 0,000 |
| Intégrité de la recherche | 0,000 | 0,000 |
| Charge utile insuffisante (le modèle a refusé de juger) | 0,000 | 0,000 |
Scores machine (provisoires)
Les deux têtes enseignantes du modèle étudiant, lues sur ce travail. Un score ordonne la base pour la relecture; il n'affirme jamais une catégorie, et le statut de validation accompagne chaque rangée tel quel.
Scores de référence d'un modèle non mature (critères de maturité non atteints, 7 itérations). Un score ordonne; il n'affirme jamais une catégorie.
score_only:v0-immature-baseline · tel quel depuis la passe de notation : score_only signifie que le nombre peut ordonner les travaux, et qu'aucune étiquette de catégorie n'en découleClassification
machine, non validéePrédiction automatique; un appel candidat d’une seule tête enseignante, pas un consensus.
Le détail, modèle par modèle et score par score, se trouve en fin de page sous « Comment cette classification a été obtenue ».