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Record W1974608932 · doi:10.1116/1.4769259

Comparison of CuPc-based organic thin-film transistors made by different dielectric structures

2012· article· en· W1974608932 on OpenAlexafffund
Wing Man Tang, Wai Tung Ng, Mark Greiner, Jacky Qiu, Michael G. Helander, Zheng‐Hong Lu

Bibliographic record

VenueJournal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 2012
Typearticle
Languageen
FieldEngineering
TopicSemiconductor materials and devices
Canadian institutionsUniversity of Toronto
FundersMajor Science and Technology Projects in Yunnan ProvinceNatural Sciences and Engineering Research Council of Canada
KeywordsMaterials scienceGate dielectricThin-film transistorDielectricThreshold voltageGate oxideSubthreshold slopeElectrodeOptoelectronicsStress (linguistics)Subthreshold conductionTransistorLayer (electronics)VoltageComposite materialElectrical engineeringChemistry

Abstract

fetched live from OpenAlex

Copper phthalocyanine-based organic thin-film transistors (OTFTs) with gate dielectric made by different combinations of ZrO2 and Al2O3 are fabricated. Experimental results show that as compared to the OTFTs with ZrO2/Al2O3 stacked and Al2O3/ZrO2/Al2O3 sandwiched gate dielectric, the device fabricated with the Al2O3/ZrO2 stacked gate dielectric manifests better electrical properties such as larger on/off ratio, smaller subthreshold slope, and higher carrier mobility. This could be explained by the fact that Al2O3 has good interface properties with CuPc and can act as a barrier layer, which prevents intermixing of materials at the organic/insulator interface and can slow oxygen diffusion through Al-O matrix, thus suppressing interfacial trap density. The gate-bias stress effect on the performance of OTFTs is also investigated. It is found that the threshold voltage shifts toward positive direction with stress time under a negative gate bias voltage. Longer stress times cause more degradation of the subthreshold and on/off ratio, probably due to more defect-state creation in the channel and an increase of interfacial traps and oxide charges in the dielectric during stress. Results also indicate that OTFTs with Al2O3 interlayer between the high-k dielectric and the gate electrode have less degradation in subthreshold and on/off ratio after a 3600-s stress. The involved mechanism lies in that the Al2O3 interlayer at the high-k dielectric/gate electrode interface can effectively block the injection of electrons from the gate electrode into the high-k material during electrical stress and thus less stress-induced interfacial traps and negative oxide charges in the devices. The electrical characteristics of the OTFTs after the removal of gate bias for a period of time are also studied.

Fetched live from OpenAlex and de-inverted. Abstracts are not stored in this database: the inverted indexes are 8.6 GB of the frame’s 9.3 GB of text, and the host has 13 GB free.

How this classification was reachedexpand

Full frame distilled prediction

Teacher imitation

Not calibrated prevalence, not ground truth. Human validation pending. Learned from the 10,348 direct Codex labels and 10,348 direct Gemma labels. Candidate is the union of thresholded teacher heads; consensus is their intersection. These outputs are machine_predicted_unvalidated and are not human labels or direct frontier model labels.

metaresearch head score (Codex)0.001
metaresearch head score (Gemma)0.000
Version: codex-gemma-dda1882f352aValidation status: machine_predicted_unvalidated
Candidate categoriesnone
Consensus categoriesnone
DomainCandidate signal: none · Consensus signal: none
Study designCandidate signal: Bench or experimental · Consensus signal: Bench or experimental
GenreCandidate signal: Empirical · Consensus signal: Empirical
Teacher disagreement score0.064
Threshold uncertainty score0.982

Codex and Gemma teacher scores by category

CategoryCodexGemma
Metaresearch0.0010.000
Meta-epidemiology (narrow)0.0000.000
Meta-epidemiology (broad)0.0010.000
Bibliometrics0.0010.001
Science and technology studies0.0000.001
Scholarly communication0.0000.000
Open science0.0000.000
Research integrity0.0000.000
Insufficient payload (model declined to judge)0.0000.000

Machine scores (provisional)

The two teacher heads of the student model, read on this work. A score orders the frame for review; it never asserts a category, and the validation status ships verbatim with every row.

Baseline scores from an immature model (maturity gate not passed, 7 training rounds). Scores rank; they never assert a category.

Opus teacher head0.014
GPT teacher head0.237
Teacher spread0.223 · how far apart the two teachers sit on this one work
Validation statusscore_only:v0-immature-baseline · verbatim from the scoring run: score_only means the number may rank works, and no category label ships from it

Classification

machine, unvalidated

Machine predicted; a candidate call from one teacher head, not a consensus.

The models applied no category: nothing in the taxonomy fit this work.
Study designBench or experimental
Domainnot available
GenreEmpirical

How this classification was reached, model by model and score by score, is at the end of the page under "How this classification was reached".

Quick stats

Citations4
Published2012
Admission routes2
Has abstractyes

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