Beyond microelectronics: materials and technology for nano-scale CMOS devices
Bibliographic record
Abstract
The scaling of CMOS devices into the nanometer regime has required the introduction of new materials in field effect transistor fabrication. Foremost of these is the introduction or new gate dielectrics to replace the ultra-thin SiO2 films traditionally used. It has been found that these materials, such as ZrO2, HfO2 and Al 2O3, reduce gate leakage currents by 2–5 orders of magnitude. Unfortunately these new high-κ materials have also resulted in substantial electron and hole mobility reduction. However, with the introduction of strained silicon, in which mobilities have been recovered to the extent that even with the high-κ gate dielectrics improvements have been noted approaching 60%. Further increases in electron and more importantly hole mobilities have been discovered with the use of silicon substrates of either (110) or (111) orientations. However, the electron mobility had a significant decrease with the same substrates. Finally the introduction of metal gates has allowed scaling to continue by eliminating the capacitance of the poly-Si gate. Even though the requirements for such metal gates are quite restrictive, a number of candidates have been found. Such metal systems that might be used include particular Ru-Ta alloys gates for both nFETs and pFETs can be fabricated and perform as desired. Similarly, the use of a variety of nitrogen concentrations in TiN and TaN yields a range of acceptable work functions which might be applicable to either or both FET types. The introduction of these materials increases device performance but it is their integration into CMOS processes that will determine their utility. (© 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Fetched live from OpenAlex and de-inverted. Abstracts are not stored in this database: the inverted indexes are 8.6 GB of the frame’s 9.3 GB of text, and the host has 13 GB free.
How this classification was reachedexpand
Full frame machine prediction
Teacher imitationNot calibrated prevalence, not ground truth. Human validation pending. The Gemma side is a direct model label for every work in the frame, read from the title-only record. The Codex side is a classifier learned from the 10,348 direct Codex labels and calibrated to design-weighted sample rates; fields without enough sample support carry no Codex call. Candidate is the union of the two sides; consensus is their intersection. These outputs are machine_predicted_unvalidated and are not human labels.
Distilled classifier scores by category (both heads)
| Category | Codex | Gemma |
|---|---|---|
| Metaresearch | 0.001 | 0.001 |
| Meta-epidemiology (narrow) | 0.001 | 0.000 |
| Meta-epidemiology (broad) | 0.001 | 0.000 |
| Bibliometrics | 0.001 | 0.001 |
| Science and technology studies | 0.001 | 0.001 |
| Scholarly communication | 0.003 | 0.004 |
| Open science | 0.001 | 0.001 |
| Research integrity | 0.002 | 0.002 |
| Insufficient payload (model declined to judge) | 0.016 | 0.010 |
Machine scores (provisional)
The two teacher heads of the student model, read on this work. A score orders the frame for review; it never asserts a category, and the validation status ships verbatim with every row.
Baseline scores from an immature model (maturity gate not passed, 7 training rounds). Scores rank; they never assert a category.
score_only:v0-immature-baseline · verbatim from the scoring run: score_only means the number may rank works, and no category label ships from itClassification
machine, unvalidatedMachine predicted; a candidate call from one source (direct Gemma or distilled Codex), not a consensus.
How this classification was reached, model by model and score by score, is at the end of the page under "How this classification was reached".