MétaCan
← all works

Surface passivation of high‐efficiency silicon solar cells by atomic‐layer‐deposited Al<sub>2</sub>O<sub>3</sub>

2008· article· en· 453 citations· W2163613573 on OpenAlex· 10.1002/pip.823

Why is this work in the frame?

A frame that forgets how it found something cannot be audited. These are the routes that admitted this work.

Canadian funderA Canadian agency funded it. The work may carry no Canadian affiliation at all.

No Canadian affiliation. An affiliation-only frame — the usual design — would never have seen this work. It is one of the works that make the case for inverting the frame.

Machine scores (provisional)

Baseline scores from an immature model (maturity gate not passed, 7 training rounds). Scores rank; they never assert a category.

The two teacher heads of the student model, read on this work. A score orders the frame for review; it never asserts a category, and the validation status ships verbatim with every row.

Opus teacher head0.024
GPT teacher head0.275
Teacher spread
0.251 · how far apart the two teachers sit on this one work
Validation status
score_only:v0-immature-baseline · verbatim from the scoring run: score_only means the number may rank works, and no category label ships from it

Abstract

Abstract Atomic‐layer‐deposited aluminium oxide (Al 2 O 3 ) is applied as rear‐surface‐passivating dielectric layer to passivated emitter and rear cell (PERC)‐type crystalline silicon (c‐Si) solar cells. The excellent passivation of low‐resistivity p ‐type silicon by the negative‐charge‐dielectric Al 2 O 3 is confirmed on the device level by an independently confirmed energy conversion efficiency of 20·6%. The best results are obtained for a stack consisting of a 30 nm Al 2 O 3 film covered by a 200 nm plasma‐enhanced‐chemical‐vapour‐deposited silicon oxide (SiO x ) layer, resulting in a rear surface recombination velocity (SRV) of 70 cm/s. Comparable results are obtained for a 130 nm single‐layer of Al 2 O 3 , resulting in a rear SRV of 90 cm/s. Copyright © 2008 John Wiley &amp; Sons, Ltd.

Fetched live from OpenAlex and de-inverted. Abstracts are not stored in this database: the inverted indexes are 8.6 GB of the frame’s 9.3 GB of text, and the host has 13 GB free.

The record

Venue
Progress in Photovoltaics Research and Applications
Topic
Silicon and Solar Cell Technologies
Field
Engineering
Canadian institutions
Funders
Institute of Gender and HealthStichting voor de Technische Wetenschappen
Keywords
PassivationMaterials scienceSiliconLayer (electronics)AluminiumAluminium oxideDielectricCommon emitterSolar cellOxideAluminum oxideEnergy conversion efficiencyOptoelectronicsStack (abstract data type)Atomic layer depositionAnalytical Chemistry (journal)NanotechnologyMetallurgyChemistry
Has abstract in OpenAlex
yes