Toward the Controlled Synthesis of Hexagonal Boron Nitride Films
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No Canadian affiliation. An affiliation-only frame — the usual design — would never have seen this work. It is one of the works that make the case for inverting the frame.
Machine scores (provisional)
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- Teacher spread
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- Validation status
score_only:v0-immature-baseline· verbatim from the scoring run: score_only means the number may rank works, and no category label ships from it
Abstract
Atomically smooth hexagonal boron nitride (h-BN) layers have very useful properties and thus potential applications for protective coatings, deep ultraviolet (DUV) emitters, and as a dielectric for nanoelectronics devices. In this paper, we report on the growth of h-BN by a low-pressure chemical vapor deposition (LPCVD) process using diborane and ammonia as the gas precursors. The use of LPCVD allows synthesis of h-BN with a controlled number of layers defined by the growth conditions, temperature, time, and gas partial pressure. Furthermore, few-layer h-BN was also grown by a sequential growth method, and insights into the growth mechanism are described, thus forming the basis of future growth of h-BN by atomic layer epitaxy.
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The record
- Venue
- ACS Nano
- Topic
- Graphene research and applications
- Field
- Materials Science
- Canadian institutions
- —
- Funders
- McMaster University
- Keywords
- DiboraneChemical vapor depositionMaterials scienceBoron nitrideNanotechnologyBoronLayer (electronics)NanoelectronicsEpitaxyDielectricChemical engineeringOptoelectronicsChemistryOrganic chemistry
- Has abstract in OpenAlex
- yes