High-Frequency Characteristics of Al/ZnO/p-Si Schottky Barrier Diode
Why is this work in the frame?
A frame that forgets how it found something cannot be audited. These are the routes that admitted this work.
No Canadian affiliation. An affiliation-only frame — the usual design — would never have seen this work. It is one of the works that make the case for inverting the frame.
Post-publication record
- Nature
- Retraction
- Reason
- Euphemisms for Plagiarism;Plagiarism of/in Article;
- Date
- 4/27/2018 0:00
- Flagged by OpenAlex?
- Yes
Source: Retraction Watch, joined by DOI. OpenAlex records retraction as is_retracted, a boolean over a state space with at least four values, so it cannot express an expression of concern, a correction or a reinstatement — it reports them as false, which reads as “fine”.
Abstract
High-frequency characteristics of Al/ZnO/p-Si Schottky barrier diode have been investigated in this study. ZnO layer has been successfully grown on Si substrate with 280 μm thickness and 10 ohm.cm resistivity. The ohmic (back contact) and Schottky (circular dots) contacts can be fabricated by the thermal evaporation technique. The fabrication of the ohmic and Schottky contacts was performed in vacuum (2.7x10-7 kPa). The capacitance-voltage (C-V) and conductance (G-V) characteristics of Al/ZnO/p-Si Schottky barrier diode (metal-oxide-semiconductor structure-MOS) were investigated at the high-frequency range from 200 kHz to 1 MHz at room temperature. By using C-V and G-V measurement, electrical properties including barrier height, Fermi level, the width of the depletion region, series resistance and interface states were investigated. The C-V and G-V characteristics confirm that interface state density and series resistance of the diode are important parameters that strongly influence the electrical paramet...
Fetched live from OpenAlex and de-inverted. Abstracts are not stored in this database: the inverted indexes are 8.6 GB of the frame’s 9.3 GB of text, and the host has 13 GB free.
The record
- Venue
- Canadian Journal of Physics
- Topic
- Semiconductor materials and interfaces
- Field
- Physics and Astronomy
- Canadian institutions
- —
- Funders
- Gazi Üniversitesi
- Keywords
- PhysicsSchottky barrierOptoelectronicsDiodeSchottky diodeMetal–semiconductor junction
- Has abstract in OpenAlex
- yes