MétaCan
Menu
Back to cohort
Record W3200450812 · doi:10.1063/5.0060688

Correlation between sidewall surface states and off-state breakdown voltage of AlGaN/GaN HFETs

2021· article· en· W3200450812 on OpenAlexafffund
Mehrnegar Aghayan, Pouya Valizadeh

Bibliographic record

VenueJournal of Applied Physics · 2021
Typearticle
Languageen
FieldPhysics and Astronomy
TopicGaN-based semiconductor devices and materials
Canadian institutionsConcordia University
FundersNatural Sciences and Engineering Research Council of CanadaMitacsCMC Microsystems
KeywordsMaterials scienceOptoelectronicsBreakdown voltageTransistorVoltageFigure of meritHeterojunctionFinElectric fieldSurface statesElectrical engineeringSurface (topology)Composite materialPhysicsEngineering

Abstract

fetched live from OpenAlex

Correlation between the sidewall surface states and off-state breakdown voltage of AlGaN/GaN heterojunction field effect transistors (HFETs) is investigated for the first time. HFETs explored in this work were realized on a variety of isolation features including conventional mesa, non-slanted fin, and slanted fin. The output and transfer characteristics of the devices from all categories of the fabricated AlGaN/GaN HFETs were studied, and a link between the separation of isolation feature sidewalls in the drain access region and the breakdown voltage was observed. Simulation results showed that by shrinking the width of the isolation feature geometry, the peak of the electric field at the drain edge of the gate is reduced as a result of tailoring its profile when a more resistive path is imposed on the drain access region. While HFETs realized on fins of smaller width benefit more from the depleting effect of acceptor sidewall surface states and consequently a higher off-state breakdown voltage, they suffer from a lower current density in the on-state. The slanted fin isolation feature geometry that we proposed here, while maintaining high breakdown voltage in the off-state, reduces the resistance in the on-state, which is represented by its highest Baliga's figure of merit among the three categories of isolation feature geometries. The proposed solution for achieving an improvement to the off-state breakdown voltage of AlGaN/GaN HFETs relies on a technology that has already been explored as a successful alternative for the realization of enhancement-mode transistors (i.e., with positive threshold voltage).

Fetched live from OpenAlex and de-inverted. Abstracts are not stored in this database: the inverted indexes are 8.6 GB of the frame’s 9.3 GB of text, and the host has 13 GB free.

How this classification was reachedexpand

Full frame distilled prediction

Teacher imitation

Not calibrated prevalence, not ground truth. Human validation pending. Learned from the 10,348 direct Codex labels and 10,348 direct Gemma labels. Candidate is the union of thresholded teacher heads; consensus is their intersection. These outputs are machine_predicted_unvalidated and are not human labels or direct frontier model labels.

metaresearch head score (Codex)0.000
metaresearch head score (Gemma)0.000
Version: codex-gemma-dda1882f352aValidation status: machine_predicted_unvalidated
Candidate categoriesnone
Consensus categoriesnone
DomainCandidate signal: none · Consensus signal: none
Study designCandidate signal: Bench or experimental · Consensus signal: Bench or experimental
GenreCandidate signal: Empirical · Consensus signal: Empirical
Teacher disagreement score0.041
Threshold uncertainty score0.601

Codex and Gemma teacher scores by category

CategoryCodexGemma
Metaresearch0.0000.000
Meta-epidemiology (narrow)0.0000.000
Meta-epidemiology (broad)0.0000.000
Bibliometrics0.0000.000
Science and technology studies0.0000.000
Scholarly communication0.0000.000
Open science0.0000.000
Research integrity0.0000.000
Insufficient payload (model declined to judge)0.0000.000

Machine scores (provisional)

The two teacher heads of the student model, read on this work. A score orders the frame for review; it never asserts a category, and the validation status ships verbatim with every row.

Baseline scores from an immature model (maturity gate not passed, 7 training rounds). Scores rank; they never assert a category.

Opus teacher head0.010
GPT teacher head0.230
Teacher spread0.220 · how far apart the two teachers sit on this one work
Validation statusscore_only:v0-immature-baseline · verbatim from the scoring run: score_only means the number may rank works, and no category label ships from it

Classification

machine, unvalidated

Machine predicted; a candidate call from one teacher head, not a consensus.

The models applied no category: nothing in the taxonomy fit this work.
Study designBench or experimental
Domainnot available
GenreEmpirical

How this classification was reached, model by model and score by score, is at the end of the page under "How this classification was reached".

Quick stats

Citations4
Published2021
Admission routes2
Has abstractyes

Explore more

Same venueJournal of Applied PhysicsSame topicGaN-based semiconductor devices and materialsFrench-language works237,207